WO2023082577A1 - 垂直腔面发射激光器以及制备方法 - Google Patents
垂直腔面发射激光器以及制备方法 Download PDFInfo
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- WO2023082577A1 WO2023082577A1 PCT/CN2022/092689 CN2022092689W WO2023082577A1 WO 2023082577 A1 WO2023082577 A1 WO 2023082577A1 CN 2022092689 W CN2022092689 W CN 2022092689W WO 2023082577 A1 WO2023082577 A1 WO 2023082577A1
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- 238000002360 preparation method Methods 0.000 title claims abstract 3
- 230000003647 oxidation Effects 0.000 claims abstract description 131
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 131
- 239000000758 substrate Substances 0.000 claims abstract description 108
- 238000002161 passivation Methods 0.000 claims description 69
- 238000000034 method Methods 0.000 claims description 22
- 238000004519 manufacturing process Methods 0.000 claims description 17
- 238000010586 diagram Methods 0.000 description 24
- 229910052782 aluminium Inorganic materials 0.000 description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 11
- 239000000463 material Substances 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 238000010292 electrical insulation Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000003491 array Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/42—Arrays of surface emitting lasers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/42—Arrays of surface emitting lasers
- H01S5/423—Arrays of surface emitting lasers having a vertical cavity
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0225—Out-coupling of light
- H01S5/02257—Out-coupling of light using windows, e.g. specially adapted for back-reflecting light to a detector inside the housing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04254—Electrodes, e.g. characterised by the structure characterised by the shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
- H01S5/18338—Non-circular shape of the structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
- H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
- H01S5/18313—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation by oxidizing at least one of the DBR layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
- H01S5/18394—Apertures, e.g. defined by the shape of the upper electrode
Definitions
- the embodiments of the present application relate to the technical field of semiconductors, for example, to a vertical cavity surface emitting laser and a manufacturing method.
- VSEL Vertical cavity surface emitting laser
- VCSEL Vertical Cavity Surface Emitting Laser Due to its advantages of small size, low threshold current, high modulation frequency, and easy fiber coupling, it can not only be used in optical communication , optical interconnection, optical information processing and other fields, and can also be used as a light source for structured light technology in 3D (3-dimensional, three-dimensional) recognition in electronic consumer fields such as mobile phones and lidar for driverless cars.
- Embodiments of the present application provide a vertical cavity surface emitting laser and a manufacturing method.
- An embodiment of the present application provides a vertical cavity surface emitting laser, including:
- the light emitting unit is provided with a light emitting hole, a through hole and an oxidation groove; the light emitting hole is used to emit light; the through hole is arranged around the light emitting hole; the oxidation groove is arranged around the light emitting hole;
- At least one of the through hole and the oxidation trench is shared by at least two of the light emitting units.
- the embodiment of the present application also provides a method for manufacturing a vertical cavity surface emitting laser, including:
- the light emitting unit is provided with a light emitting hole, a through hole and an oxidation groove; the light emitting hole is used to emit light; the through hole is arranged around the light emitting hole; the oxidation groove is arranged around the light emitting hole;
- At least one of the through hole and the oxidation trench is shared by at least two of the light emitting units.
- Fig. 1 is a top view of a vertical cavity surface emitting laser provided by the related art
- Fig. 2 is a top view of another vertical cavity surface emitting laser provided by the related art
- Fig. 3 is a schematic cross-sectional structure diagram of A1-A2 direction in Fig. 1;
- FIG. 4 is a schematic structural diagram of a vertical cavity surface emitting laser provided in an embodiment of the present application.
- FIG. 5 is a schematic structural diagram of another vertical cavity surface emitting laser provided by an embodiment of the present application.
- Fig. 6 is a top view of another vertical cavity surface emitting laser provided by an embodiment of the present application.
- Fig. 7 is a schematic diagram of a cross-sectional structure in the B1-B2 direction in Fig. 4-Fig. 6;
- Fig. 8 is a schematic cross-sectional structure diagram of B3-B4 direction in Fig. 5 and Fig. 6;
- FIG. 9 is a schematic flowchart of a method for manufacturing a vertical cavity surface emitting laser provided in an embodiment of the present application.
- FIG. 10 is a schematic flow diagram of step 120 in FIG. 9;
- FIG. 11 is a schematic flow diagram of step 1203 in FIG. 10;
- FIG. 12 is a schematic flow diagram of step 1204 in FIG. 10;
- FIG. 13 is another schematic flow diagram included in step 1203 in FIG. 10;
- FIG. 14 is a structural diagram corresponding to each step of a method for manufacturing a vertical cavity surface emitting laser provided in an embodiment of the present application;
- FIG. 15 is another structural diagram corresponding to each step of a method for manufacturing a vertical cavity surface emitting laser provided in an embodiment of the present application;
- FIG. 16 is another structural diagram corresponding to each step of a method for manufacturing a vertical cavity surface emitting laser provided in an embodiment of the present application;
- FIG. 17 is another structural diagram corresponding to each step of a method for manufacturing a vertical cavity surface emitting laser provided in an embodiment of the present application.
- FIG. 18 is another structural diagram corresponding to each step of a method for manufacturing a vertical cavity surface emitting laser provided in an embodiment of the present application.
- FIG. 19 is another structural diagram corresponding to each step of a method for manufacturing a vertical cavity surface emitting laser provided in an embodiment of the present application.
- FIG. 20 is another structural diagram corresponding to each step of a method for manufacturing a vertical cavity surface emitting laser provided in an embodiment of the present application;
- FIG. 21 is another structural diagram corresponding to each step of a method for manufacturing a vertical cavity surface emitting laser provided in an embodiment of the present application.
- FIG. 22 is another structural diagram corresponding to each step of a method for fabricating a vertical cavity surface emitting laser provided in an embodiment of the present application.
- FIG. 1 is a top view of a vertical cavity surface emitting laser provided in the related art.
- Fig. 2 is a top view of another vertical cavity surface emitting laser provided in the related art.
- FIG. 3 is a schematic cross-sectional structure diagram along the direction A1-A2 in FIG. 1 . Referring to FIGS.
- the vertical cavity surface emitting laser in the related art includes a substrate 10 and light-emitting units 20 arranged in an array, and the light-emitting units 20 are located on the substrate 10 or the epitaxial layer (not shown) ) surface; each light emitting unit 20 is provided with a light emitting hole 21, a through hole 22 and an oxidation trench 23.
- Each light emitting unit 20 is provided with a through hole 22 surrounding the light emitting hole 21 and an oxidation trench 23 , the through hole 22 is disposed around the light emitting hole 21 , and the oxidation trench 23 is disposed around the through hole 22 .
- the light-emitting units 20 do not share the through hole 22 , and the light-emitting units 20 do not share the oxidation trench 23 . Therefore, the area of the free area between the light emitting units 20 is relatively large, resulting in that the size between the light emitting units 20 cannot be further reduced.
- the first pad 25 is not shown in FIG. 1 . Also shown in FIG. 3 are the first pad 25 , the first passivation layer 24 , the first pad metal contact layer 25 a and the second pad 29 .
- FIG. 4 is a schematic structural diagram of a vertical cavity surface emitting laser provided by an embodiment of the present application.
- FIG. 5 is a schematic structural diagram of another vertical cavity surface emitting laser provided by an embodiment of the present application. 4 and 5, the vertical cavity surface emitting laser comprises: a substrate 10; a light emitting unit 20 arranged in an array, the light emitting unit 20 is located on the surface of the substrate 10; wherein the light emitting unit 20 is provided with a light emitting hole 21, a through hole 22 and an oxidation groove 23; the light-emitting hole 21 is used to emit light; the through hole 22 is arranged around the light-emitting hole 21; the oxidation groove 23 is arranged around the light-emitting hole 21; 20 shared.
- the through hole 22 is used to place a pad for providing electrical signals to the light emitting unit 20 .
- the pad can be a P-type pad or an N-type pad.
- the through hole 22 is disposed around the light emitting hole 21 .
- the through hole 22 is shared by at least three light emitting units 20 . It should be noted that, not shown in the drawings, when the light emitting units 20 include one row or one column, the through holes 22 are shared by at least two light emitting units 20 .
- the oxidation trench 23 is disposed around the light emitting hole 21 .
- the oxidation trench 23 is shared by four light emitting units 20 .
- the oxidation trench 23 is shared by at least three light emitting units 20 . It should be noted that, not shown in the drawings, when the light emitting units 20 include one row or one column, the oxidation trench 23 is shared by at least two light emitting units 20 .
- the through hole 22 and/or the oxidation trench 23 are shared by at least two light-emitting units 20 , compared to the case where there is no shared through-hole 22 between the light-emitting units 20 and there is no light-emitting unit 20
- the technical scheme of sharing the oxidation trench 23, the through hole 22 and/or the oxidation trench 23 are shared by different light emitting units 20, the through hole 22 and/or the oxidation trench 23 can occupy the free area between the light emitting units 20, reducing the light emission
- the size between the units 20 further increases the density of the light-emitting units 20 and the power density of the vertical cavity surface emitting laser.
- Fig. 6 is a top view of another vertical cavity surface emitting laser provided by an embodiment of the present application.
- the oxidation trench 23 surrounding the same light-emitting hole 21 includes S oxidation sub-trenches, wherein the value of S includes an even number greater than or equal to 2; and/or, surrounding
- the through hole 22 of the same light-emitting hole includes Q sub-limiting holes, wherein the value of Q includes an even number greater than or equal to 2, and the projected areas of the oxidation sub-trench and the sub-limiting holes on the substrate do not overlap.
- the oxidation trench 23 includes four oxidation sub-trenches.
- the oxidation trench 23 includes six oxidation sub-trenches.
- the through hole 22 surrounding the same light-emitting hole 21 includes six sub-limiting holes, wherein there is a gap between the boundary of the oxidation sub-trench and the boundary of the through hole 22, that is, the projected area of the oxidation sub-trench on the substrate 10 is equal to The projected areas of the through holes 22 on the substrate 10 do not overlap.
- the oxidation trench 23 is set as a plurality of spaced apart oxidation sub-trenches, and the oxidation sub-trench can be arranged in the light emitting unit
- the free area between 20 further reduces the size between the light-emitting units 20, and further increases the density of the light-emitting units 20 and the light-emitting power density of the vertical cavity surface emitting laser.
- the through hole 22 is set as a plurality of spaced sub-limiting holes, and the sub-limiting holes can be set between the light emitting units 20
- the free area further reduces the size between the light-emitting units 20, thereby further increasing the density of the light-emitting units 20 and the light-emitting power density of the vertical cavity surface emitting laser.
- S oxide sub-trenches are arranged at equal intervals in the circumferential direction around the same light emitting hole 21 .
- the S oxidation sub-trenches are arranged at equal intervals in the circumferential direction around the same light-emitting hole 21 , which simplifies the layout difficulty of the S oxidation sub-trenches in the oxidation trench 23 .
- Q sub-positioning holes are arranged at equal intervals in the circumferential direction around the same light emitting hole 21 .
- the sub-limiting holes are arranged at equal intervals in the circumferential direction around the same light-emitting hole 21 , which simplifies the layout difficulty of the Q sub-limiting holes in the through hole 22 .
- the oxide sub-grooves surrounding the same light emitting hole 21 are separated from the sub-limiting holes surrounding the same light emitting hole 21 set up.
- the oxidation sub-grooves surrounding the same light-emitting hole 21 are spaced apart from the sub-limiting holes surrounding the same light-emitting hole 21, and the through hole 22 and the oxidation groove 23 together form a light-emitting hole. 21.
- the distance between the oxidation trench 23 and the light emitting hole 21 is further shortened, the size between the light emitting units 20 is further reduced, and the density of the light emitting units 20 and the power density of the vertical cavity surface emitting laser light are increased.
- the distance between the side of the oxide sub-trench surrounding the same light-emitting hole 21 adjacent to the light-emitting hole 21 and the light-emitting hole 21 is equal to the distance between the sub-trench surrounding the same light-emitting hole 21 The distance between the side of the position hole adjacent to the light-emitting hole 21 and the light-emitting hole 21 .
- the distance between the side of the oxidation trench 23 adjacent to the light-emitting hole 21 and the light-emitting hole 21 is greater than the distance between the side of the through hole 22 adjacent to the light-emitting hole 21 and the light-emitting hole 21.
- the technical solution for the spacing of the holes 21, the technical solution provided by the embodiment of the present application further shortens the distance between the oxidation trench 23 and the light-emitting hole 21, further reduces the size between the light-emitting units 20, and further increases the density of the light-emitting units 20 And the power density of the vertical cavity surface emitting laser light.
- FIG. 7 is a schematic cross-sectional structure diagram along the B1-B2 direction in Fig. 4-Fig. 6 .
- FIG. 8 is a schematic cross-sectional structure diagram along the B3-B4 direction in FIG. 5 and FIG. 6 .
- the first pad 25 is not shown in the top views of FIGS. 4-6 . In one embodiment, on the basis of the above technical solution, referring to FIG.
- the light emitting unit 20 includes a first reflector 20a, the first reflector 20a is located on the surface of the substrate 10; an active layer 20b, the active layer 20b is located
- the first reflection mirror 20a is away from the surface of the substrate 10;
- the second reflection mirror 20c, the second reflection mirror 20c is located on the surface of the active layer 20b away from the substrate 10, and the surface of the second reflection mirror 20c away from the substrate 10 is provided with an oxidation groove Groove 23, the oxidation trench 23 runs through the second reflector 20c, the active layer 20b and part of the first reflector 20a;
- the first passivation layer 24, the first passivation layer 24 covers the second reflector 20c away from the substrate 10- side surface and the bottom and side surfaces of the oxidation trench 23,
- the first passivation layer 24 is provided with a through hole 22, and the projection of the through hole 22 on the substrate 10 exposes a part of the second reflector 20c;
- the first pad 25, the first The pad 25 is located on the surface of the first
- the first passivation layer 24 can realize electrical insulation between the first pad 25 and the first mirror 20a.
- it further includes a second pad 29 located on the side of the substrate 10 away from the light emitting unit 20 .
- the second pad 29 is an N-type pad.
- the first pad 25 is an N-type pad
- the second pad 29 is a P-type pad.
- the first reflector 20 a and the second reflector 20 c have different refractive indices, and their optical thicknesses are both of quarter wavelength odd multiples of semiconductor material grown periodically.
- the active layer 20b is a quantum well luminescent material, which emits light under the action of a current signal, and the emitted light is reflected between the first reflector 20a and the second reflector 20c and then emerges from the second reflector 20c.
- the embodiment of the present application includes the light emitted by the vertical cavity surface emitting laser emerging from the second mirror 20c shown in the drawings, and may also include a technical solution in which the light emitted by the vertical cavity surface emitting laser exits the first reflecting mirror 20a.
- the first pad 25 applies the first current signal to the second mirror 20c, wherein the first ohmic contact layer 27 is formed on the surface of the second mirror 20c away from the substrate 10, that is, the first ohmic contact layer 27 It is provided between the first pad 25 and the second mirror 20c.
- the first reflector 20 a of each light emitting unit 20 obtains the second current signal through the second pad 29 .
- the active layer 20b emits light, and the emitted light is reflected between the first reflector 20a and the second reflector 20c, and then exits from the second reflector 20c.
- the area surrounded by the through hole 22 is the light emitting hole 21 .
- FIG. 4 and FIG. 5 the area surrounded by the through hole 22 is the light emitting hole 21 .
- the area surrounded by the through hole 22 and the oxidation trench 23 is the light emitting hole 21 .
- the first pad ohmic metal layer is not provided on the first pad 25 and the second reflector 20c, which can save the horizontal space occupied by the metal contact layer of the first pad for accommodating oxidation.
- the groove 23 further shortens the distance between the oxidation groove 23 and the light-emitting hole 21, and further reduces the size between the light-emitting units 20, thereby increasing the density of the light-emitting units 20 and the power density of the VCSEL.
- a second passivation layer 26 is further included, and the second passivation layer 26 is located between the first passivation layer 24 and the second reflector 20c In between, the via hole 22 penetrates through the second passivation layer 26 .
- the second passivation layer 26 can protect the film layer corresponding to the light emitting unit 20 when the oxidation trench 23 is formed. It should be noted that, by controlling the thicknesses of the first passivation layer 24 and the second passivation layer 26 , the first passivation layer 24 and the second passivation layer 26 can transmit the light emitted by the light emitting unit 20 .
- the second passivation layer 26 may also be located between the first passivation layer 24 and the first ohmic contact layer 27 .
- an oxide layer 28b is also included.
- the oxide layer 28b is located in the second mirror 20c.
- the oxide layer 28b surrounds an oxidation hole 28a, and the oxidation hole 28a
- the projection on the substrate 10 lies within the projection of the luminous aperture 21 on the substrate 10 .
- the oxidation hole 28a is surrounded by the oxide layer 28b, the oxide layer 28b is formed after the aluminum component layer 28 is oxidized, and the oxidation hole 28a is the unoxidized aluminum component layer.
- the aluminum component layer may be an AlAs or AlGaAs layer.
- the aluminum composition ratio in the aluminum composition layer is the highest in the second mirror 20c.
- the size of the oxidation hole 28 a can limit the size of the light-emitting point in the light-emitting hole 21 .
- FIG. 9 is a schematic flowchart of a method for fabricating a vertical cavity surface emitting laser provided in an embodiment of the present application.
- 14-22 are structural diagrams corresponding to each step of a method for manufacturing a vertical cavity surface emitting laser provided in an embodiment of the present application.
- the embodiment of the present application also provides a method for manufacturing a vertical cavity surface emitting laser. Referring to Fig. 9, the method includes the following steps:
- Step 110 providing a substrate.
- the substrate 10 can be made of a semiconductor material, such as gallium arsenide semiconductor material.
- Step 120 forming light-emitting units arranged in an array on the surface of the substrate.
- the light-emitting unit is provided with a light-emitting hole, a through hole and an oxidation groove; the light-emitting hole is used to emit light; the through hole is arranged around the light-emitting hole; the oxidation groove is arranged around the light-emitting hole; the through hole and/or the oxidation groove is at least two
- the lighting unit is shared.
- the light emitting units 20 are arranged in arrays on the substrate.
- the light emitting unit 20 is provided with a light emitting hole 21, a through hole 22 and an oxidation groove 23; the light emitting hole 21 is used for emitting light; the through hole 22 is arranged around the light emitting hole 21; the oxidation groove 23 is arranged around the light emitting hole 21; the through hole 22 and/or Or the oxidation trench 23 is shared by at least two light emitting units 20 .
- FIG. 4 and FIG. 5 exemplarily show 16 light emitting units 20 .
- the through hole 22 is disposed around the light emitting hole 21 .
- the through hole 22 is shared by four light emitting units 20 . It should be noted that, not shown in the drawings, when the light emitting unit 20 includes one row or one column, the through hole 22 is shared by two light emitting units.
- the oxidation trench 23 is disposed around the light emitting hole 21 .
- the oxidation trench 23 is shared by four light emitting units 20 .
- the oxidation trench 23 is shared by three light emitting units 20 . It should be noted that, not shown in the drawings, when the light emitting unit 20 includes one row or one column, the oxidation trench 23 is shared by two light emitting units.
- the through hole 22 and/or the oxidation trench 23 are shared by at least two light-emitting units 20 , compared to the case where there is no shared through-hole 22 between the light-emitting units 20 and there is no light-emitting unit 20
- the technical scheme of sharing the oxidation trench 23, the through hole 22 and/or the oxidation trench 23 are shared by different light emitting units 20, the through hole 22 and/or the oxidation trench 23 can occupy the free area between the light emitting units 20, reducing the light emission
- the size between the units 20 further increases the density of the light-emitting units 20 and the power density of the vertical cavity surface emitting laser.
- FIG. 10 is a schematic flowchart of step 120 in FIG. 9 .
- step 120 forming light-emitting units arranged in an array on the surface of the substrate includes:
- Step 1201 forming a first mirror on the surface of the substrate.
- a first mirror 20 a is formed on the surface of the substrate 10 .
- Step 1202 forming an active layer on the surface of the first mirror away from the substrate.
- an active layer 20 b is formed on the surface of the first mirror 20 a away from the substrate 10 .
- Step 1203 forming a second reflection mirror on the surface of the active layer away from the substrate, wherein the surface of the second reflection mirror away from the substrate is provided with an oxidation groove, and the oxidation groove runs through the second reflection mirror and the active layer and part of the second reflection mirror. a mirror.
- a second reflection mirror 20c is formed on the surface of the active layer 20b away from the substrate 10, wherein the surface of the second reflection mirror 20c away from the substrate 10 is provided with an oxidation trench 23, and the oxidation trench 23 runs through the second reflector.
- Step 1204 forming a first passivation layer on the surface of the second reflector away from the substrate and the bottom and side surfaces of the oxidation trench.
- a through hole is provided on the surface of the first passivation layer away from the substrate, and the projection of the through hole on the substrate exposes part of the second reflector.
- a first passivation layer 24 is formed on the surface of the second reflector 20c away from the substrate 10 and on the bottom and side surfaces of the oxidation trench 23, wherein the first passivation layer 24 is away from the side of the substrate 10
- the surface is provided with a through hole 22 , and the projection of the through hole 22 on the substrate 10 exposes a part of the first ohmic contact layer 27 .
- the first passivation layer 24 may realize electrical insulation between the first pad 25 and the first mirror 20a.
- Step 1205 forming a first pad on the surface of the first passivation layer away from the substrate, wherein the first pad is connected to the second reflector through a through hole.
- a first pad 25 is formed on the surface of the first passivation layer away from the substrate, wherein the first pad 25 is connected to the second mirror 20 c through the through hole 22 .
- the first pad metal contact layer is not provided on the first pad 25 and the second reflector 20c, which can save the horizontal space occupied by the first pad metal contact layer for accommodating oxidation.
- the groove 23 further shortens the distance between the oxidation groove 23 and the light-emitting hole 21, and further reduces the size between the light-emitting units 20, thereby increasing the density of the light-emitting units 20 and the power density of the VCSEL.
- a second pad 29 may be formed on the surface of the substrate 10 away from the light emitting unit 20 .
- the active layer 20b is a quantum well luminescent material, which emits light under the action of a current signal, and the emitted light is reflected between the first reflector 20a and the second reflector 20c and then emerges from the second reflector 20c.
- the embodiment of the present application includes the light emitted by the vertical cavity surface emitting laser emerging from the second mirror 20c shown in the drawings, and may also include a technical solution in which the light emitted by the vertical cavity surface emitting laser exits the first reflecting mirror 20a.
- the first pad 25 applies the first current signal to the second mirror 20c, wherein the first ohmic contact layer 27 is formed on the surface of the second mirror 20c away from the substrate 10, that is, the first ohmic contact layer 27 It is provided between the first pad 25 and the second mirror 20c.
- the first reflector 20 a of each light emitting unit 20 obtains the second current signal through the second pad 29 .
- the active layer 20b emits light, and the emitted light is reflected between the first reflector 20a and the second reflector 20c, and then exits from the second reflector 20c.
- the area surrounded by the through hole 22 is the light emitting hole 21 .
- the area surrounded by the through hole 22 and the oxidation trench 23 is the light emitting hole 21 .
- FIG. 11 is a schematic flowchart of step 1203 in FIG. 10 .
- step 1203 forming a second mirror on the surface of the active layer away from the substrate includes:
- Step 12031 forming a second mirror on the surface of the active layer away from the substrate.
- a second mirror 20c is formed on the surface of the active layer 20b away from the substrate 10 .
- the first ohmic contact layer 27 may also be formed.
- the first ohmic contact layer 27 can realize good ohmic contact between the first pad 25 and the second mirror 20c.
- Step 12032 forming a second passivation layer on the surface of the second mirror away from the substrate.
- a second passivation layer 26 is formed on the surface of the second mirror 20 c away from the substrate 10 .
- the second passivation layer 26 can protect the film layer corresponding to the light emitting unit 20 when the oxidation trench 23 is formed.
- Step 12033 forming an oxidation trench on the surface of the second passivation layer away from the substrate, wherein the oxidation trench penetrates the second passivation layer, the second mirror, the active layer and part of the first mirror.
- an oxidation trench 23 is formed on the surface of the second passivation layer 26 away from the substrate 10, wherein the oxidation trench 23 penetrates the second passivation layer 26, the second mirror 20c, the active layer 20b and part of the second passivation layer 26.
- a mirror 20a is formed on the surface of the second passivation layer 26 away from the substrate 10, wherein the oxidation trench 23 penetrates the second passivation layer 26, the second mirror 20c, the active layer 20b and part of the second passivation layer 26.
- FIG. 12 is a schematic flowchart of step 1204 in FIG. 10 .
- step 1204 forming a first passivation layer on the surface of the second reflector away from the substrate and on the bottom and side surfaces of the oxidation trench includes:
- Step 12041 forming a first passivation layer on the surface of the second passivation layer away from the substrate and on the bottom and side surfaces of the oxidation trench.
- the first passivation layer 24 is formed on the surface of the second passivation layer 26 away from the substrate 10 and the bottom and side surfaces of the oxidation trench 23 .
- Step 12042 forming via holes on the surfaces of the second passivation layer and the first passivation layer away from the substrate.
- the projection of the through hole on the substrate exposes part of the second reflector.
- a through hole 22 is formed on the surface of the second passivation layer 26 and the first passivation layer 24 away from the substrate 10 , wherein the projection of the through hole 22 on the substrate 10 exposes a portion of the first ohmic contact layer 27 .
- FIG. 13 is another schematic flowchart of step 1203 in FIG. 10 .
- step 1203 forming a second mirror on the surface of the active layer away from the substrate includes:
- Step 12034 forming a second mirror on the surface of the active layer away from the substrate.
- a second mirror 20c is formed on the surface of the active layer 20b away from the substrate 10 .
- the second reflecting mirror 20c includes an aluminum composition layer 28 inside.
- the aluminum composition ratio in the aluminum composition layer 28 is the highest in the second mirror 20c.
- Step 12035 forming a second passivation layer on the surface of the second mirror away from the substrate.
- a second passivation layer 26 is formed on the surface of the second mirror 20 c away from the substrate 10 .
- Step 12036 forming an oxidation trench on the surface of the second passivation layer away from the substrate, wherein the oxidation trench penetrates the second passivation layer, the second mirror and the active layer.
- an oxidation trench 23 is formed on the surface of the second passivation layer 26 away from the substrate 10 , wherein the oxidation trench 23 penetrates the second passivation layer 26 , the second mirror 20c and the active layer 20b.
- Step 12037 Through an oxidation process, an oxide layer surrounding an oxidation hole is formed in the second reflector, wherein the projection of the oxidation hole on the substrate is within the projection of the light emitting hole on the substrate.
- an oxidation layer 28b surrounding an oxidation hole 28a is formed in the second mirror 20c through an oxidation process, wherein the projection of the oxidation hole 28a on the substrate 10 is within the projection of the light emitting hole 21 on the substrate 10 .
- the oxide layer 28b is formed after the aluminum component layer 28 is oxidized, and the oxidation hole 28a is the unoxidized aluminum component layer 28 .
- the aluminum component layer 28 may be an AlAs or AlGaAs layer.
- the size of the oxidation hole 28 a can limit the size of the light-emitting point in the light-emitting hole 21 .
- the through hole and/or the oxidation trench is shared by at least two light emitting units, compared with the technology in which there is no shared through hole between the light emitting units and the oxidation trench is not shared between the light emitting units solution, through holes and/or oxidation trenches are shared by different light-emitting units, through-holes and/or oxidation trenches can occupy the free area between light-emitting units, reducing the size between light-emitting units, thereby increasing the density of light-emitting units And the power density of the vertical cavity surface emitting laser light.
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Abstract
Description
Claims (13)
- 一种垂直腔面发射激光器,包括:衬底(10);阵列排布的发光单元(20),所述发光单元(20)位于所述衬底(10)的表面;其中,所述发光单元(20)设置有发光孔(21)、通孔(22)和氧化沟槽(23);所述发光孔(21)用于出射光线;所述通孔(22)围绕所述发光孔(21)设置;所述氧化沟槽(23)围绕所述发光孔(21)设置;所述通孔(22)和所述氧化沟槽(23)中的至少一个被至少两个所述发光单元(20)共用。
- 根据权利要求1所述的垂直腔面发射激光器,其中,围绕同一所述发光孔(21)的所述氧化沟槽(23)包括S个氧化子沟槽,其中,所述S的取值包括大于或等于2的偶数;和/或,围绕同一所述发光孔(21)的所述通孔(22)包括Q个子限位孔,其中,所述Q的取值包括大于或等于2的偶数。
- 根据权利要求2所述的垂直腔面发射激光器,其中,S个所述氧化子沟槽等间距设置在环绕同一所述发光孔(21)的周向上。
- 根据权利要求2所述的垂直腔面发射激光器,其中,Q个所述子限位孔等间距设置在环绕同一所述发光孔(21)的周向上。
- 根据权利要求2所述的垂直腔面发射激光器,其中,在环绕同一所述发光孔(21)的周向上,围绕所述同一发光孔(21)的所述氧化子沟槽与围绕同一所述发光孔(21)的所述子限位孔间隔设置,所述氧化子沟槽和所述子限位孔在所述衬底(10)的投影面积无交叠。
- 根据权利要求5所述的垂直腔面发射激光器,其中,围绕同一所述发光孔(21)的所述氧化子沟槽邻近所述发光孔(21)的一侧与所述发光孔(21)的间距等于围绕同一所述发光孔(21)的所述子限位孔邻近所述发光孔(21)的一侧与所述发光孔(21)的间距。
- 根据权利要求1所述的垂直腔面发射激光器,其中,所述发光单元(20)包括第一反射镜(20a),所述第一反射镜(20a)位于所述衬底(10)的表面;有源层(20b),所述有源层(20b)位于所述第一反射镜(20a)远离所述衬底(10)的表面;第二反射镜(20c),所述第二反射镜(20c)位于所述有源层(20b)远离所述衬底(10)的表面,所述第二反射镜(20c)远离所述衬底(10)的表面设置有所述氧化沟槽(23),所述氧化沟槽(23)贯穿所述第二反射镜(20c)、所述有源层(20b)以及部分所 述第一反射镜(20a);第一钝化层(24),所述第一钝化层(24)覆盖所述第二反射镜(20c)远离所述衬底(10)一侧的表面以及所述氧化沟槽(23)的底面和侧面,所述第一钝化层(24)设置有所述通孔(22),所述通孔(22)在所述衬底(10)的投影露出部分所述第二反射镜(20c);第一焊盘(25),所述第一焊盘(25)位于所述第一钝化层(24)远离所述衬底(10)的表面,所述第一焊盘(25)通过所述通孔(22)与所述第二反射镜(20c)连接。
- 根据权利要求7所述的垂直腔面发射激光器,还包括第二钝化层(26),所述第二钝化层(26)位于所述第一钝化层(24)和所述第二反射镜(20c)之间,所述通孔(22)贯穿所述第二钝化层(26)。
- 根据权利要求7所述的垂直腔面发射激光器,还包括氧化层(28b),所述氧化层(28b)位于所述第二反射镜(20c)内,所述氧化层(28b)围成氧化孔(28a),所述氧化孔(28a)在所述衬底(10)的投影位于所述发光孔(21)在所述衬底的投影之内。
- 一种垂直腔面发射激光器的制备方法,包括:提供衬底(10);在所述衬底(10)的表面形成阵列排布的发光单元(20);其中,所述发光单元(20)设置有发光孔(21)、通孔(22)和氧化沟槽(23);所述发光孔(21)用于出射光线;所述通孔(22)围绕所述发光孔(21)设置;所述氧化沟槽(23)围绕所述发光孔(21)设置;所述通孔(22)和所述氧化沟槽(23)中的至少一个被至少两个所述发光单元(20)共用。
- 根据权利要求10所述的垂直腔面发射激光器的制备方法,其中,在所述衬底(10)的表面形成阵列排布的发光单元(20)包括:在所述衬底(10)的表面形成第一反射镜(20a);在所述第一反射镜(20a)远离所述衬底(10)的表面形成有源层(20b);在所述有源层(20b)远离所述衬底(10)的表面形成第二反射镜(20c),其中,所述第二反射镜(20c)远离所述衬底(10)的表面设置有所述氧化沟槽(23),所述氧化沟槽(23)贯穿所述第二反射镜(20c)、所述有源层(20b)以及部分所述第一反射镜(20a);在所述第二反射镜(20c)远离所述衬底(10)一侧的表面以及所述氧化沟槽(23)的底面和侧面形成第一钝化层(24),其中,所述第一钝化层(24)远离所述衬 底(10)的表面设置有所述通孔(22),所述通孔(22)在所述衬底(10)的投影露出部分所述第二反射镜(20c);在所述第一钝化层(24)远离所述衬底(10)的表面形成第一焊盘(25),其中,所述第一焊盘(25)通过所述通孔(22)与所述第二反射镜(20c)连接。
- 根据权利要求11所述的垂直腔面发射激光器的制备方法,在所述有源层(20b)远离所述衬底(10)的表面形成第二反射镜(20c)之后,还包括:在所述第二反射镜(20c)远离所述衬底(10)的表面形成第二钝化层(26);在所述第二钝化层(26)远离所述衬底(10)的表面形成所述氧化沟槽(23),其中,所述氧化沟槽(23)贯穿所述第二钝化层(26)、所述第二反射镜(20c)、所述有源层(20b)以及部分所述第一反射镜(20a);在所述第二反射镜(20c)远离所述衬底(10)一侧的表面以及所述氧化沟槽(23)的底面和侧面形成第一钝化层(24),包括:在所述第二钝化层(26)远离所述衬底(10)一侧的表面以及所述氧化沟槽(23)的底面和侧面形成第一钝化层(24);在所述第二钝化层(26)和所述第一钝化层(24)远离所述衬底(10)的表面形成所述通孔(22),其中,所述通孔(22)在所述衬底(10)的投影露出部分所述第二反射镜(20c)。
- 根据权利要求11所述的垂直腔面发射激光器的制备方法,在所述有源层(20b)远离所述衬底(10)的表面形成第二反射镜(20c)之后,还包括:在所述第二反射镜(20c)远离所述衬底(10)的表面形成第二钝化层(26);在所述第二钝化层(26)远离所述衬底(10)的表面形成所述氧化沟槽(23),其中,所述氧化沟槽(23)贯穿所述第二钝化层(26)、所述第二反射镜(20c)、所述有源层(20b)和部分所述第一反射镜(20a);通过氧化工艺,在所述第二反射镜(20c)内形成围成氧化孔(28a)的氧化层(28b),其中,所述氧化孔(28a)在所述衬底(10)的投影位于所述发光孔(21)在所述衬底(10)的投影之内。
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KR1020227033863A KR20230070406A (ko) | 2021-11-11 | 2022-05-13 | 수직 공동 표면 방사 레이저 장치 및 그의 제조방법 |
GB2317459.2A GB2621741A (en) | 2021-11-11 | 2022-05-13 | Vertical-cavity surface-emitting laser and preparation method |
EP22891388.5A EP4325675A1 (en) | 2021-11-11 | 2022-05-13 | Vertical-cavity surface-emitting laser and preparation method |
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CN107104363A (zh) * | 2016-02-23 | 2017-08-29 | 朗美通经营有限责任公司 | 用于垂直腔表面发射激光器的紧凑发射器设计 |
CN110323669A (zh) * | 2018-03-28 | 2019-10-11 | 朗美通经营有限责任公司 | 具有到达邻近发射器间共享的欧姆金属层的共享过孔的发射器阵列 |
CN110649464A (zh) * | 2019-07-05 | 2020-01-03 | 武汉仟目激光有限公司 | 一种垂直腔面发射激光器及其密集型阵列结构 |
CN114069391A (zh) * | 2021-11-11 | 2022-02-18 | 常州纵慧芯光半导体科技有限公司 | 一种垂直腔面发射激光器以及制备方法 |
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CN107104363A (zh) * | 2016-02-23 | 2017-08-29 | 朗美通经营有限责任公司 | 用于垂直腔表面发射激光器的紧凑发射器设计 |
CN110323669A (zh) * | 2018-03-28 | 2019-10-11 | 朗美通经营有限责任公司 | 具有到达邻近发射器间共享的欧姆金属层的共享过孔的发射器阵列 |
CN110649464A (zh) * | 2019-07-05 | 2020-01-03 | 武汉仟目激光有限公司 | 一种垂直腔面发射激光器及其密集型阵列结构 |
CN114069391A (zh) * | 2021-11-11 | 2022-02-18 | 常州纵慧芯光半导体科技有限公司 | 一种垂直腔面发射激光器以及制备方法 |
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