Classifications

• • C—CHEMISTRY; METALLURGY
  • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
  • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
  • C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
  • C11D1/88—Ampholytes; Electroneutral compounds
  • C11D1/90—Betaines
• • C—CHEMISTRY; METALLURGY
  • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
  • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
  • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
  • C11D3/48—Medical, disinfecting agents, disinfecting, antibacterial, germicidal or antimicrobial compositions
• • C—CHEMISTRY; METALLURGY
  • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
  • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
  • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
  • C11D3/16—Organic compounds
  • C11D3/20—Organic compounds containing oxygen
  • C11D3/2003—Alcohols; Phenols
  • C11D3/2006—Monohydric alcohols
  • C11D3/2034—Monohydric alcohols aromatic
• • C—CHEMISTRY; METALLURGY
  • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
  • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
  • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
  • C11D3/16—Organic compounds
  • C11D3/20—Organic compounds containing oxygen
  • C11D3/2003—Alcohols; Phenols
  • C11D3/2041—Dihydric alcohols
  • C11D3/2044—Dihydric alcohols linear
• • C—CHEMISTRY; METALLURGY
  • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
  • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
  • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
  • C11D3/16—Organic compounds
  • C11D3/20—Organic compounds containing oxygen
  • C11D3/2075—Carboxylic acids-salts thereof
• • C—CHEMISTRY; METALLURGY
  • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
  • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
  • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
  • C11D3/16—Organic compounds
  • C11D3/20—Organic compounds containing oxygen
  • C11D3/2075—Carboxylic acids-salts thereof
  • C11D3/2079—Monocarboxylic acids-salts thereof
• • C—CHEMISTRY; METALLURGY
  • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
  • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
  • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
  • C11D3/16—Organic compounds
  • C11D3/20—Organic compounds containing oxygen
  • C11D3/2075—Carboxylic acids-salts thereof
  • C11D3/2082—Polycarboxylic acids-salts thereof
• • C—CHEMISTRY; METALLURGY
  • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
  • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
  • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
  • C11D3/16—Organic compounds
  • C11D3/20—Organic compounds containing oxygen
  • C11D3/2075—Carboxylic acids-salts thereof
  • C11D3/2086—Hydroxy carboxylic acids-salts thereof
• • C—CHEMISTRY; METALLURGY
  • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
  • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
  • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
  • C11D3/16—Organic compounds
  • C11D3/24—Organic compounds containing halogen
• • C—CHEMISTRY; METALLURGY
  • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
  • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
  • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
  • C11D3/16—Organic compounds
  • C11D3/26—Organic compounds containing nitrogen
  • C11D3/30—Amines; Substituted amines ; Quaternized amines
• • C—CHEMISTRY; METALLURGY
  • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
  • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
  • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
  • C11D3/16—Organic compounds
  • C11D3/26—Organic compounds containing nitrogen
  • C11D3/33—Amino carboxylic acids
• • C—CHEMISTRY; METALLURGY
  • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
  • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
  • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
  • C11D3/16—Organic compounds
  • C11D3/34—Organic compounds containing sulfur
  • C11D3/3481—Organic compounds containing sulfur containing sulfur in a heterocyclic ring, e.g. sultones or sulfolanes
• • C—CHEMISTRY; METALLURGY
  • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
  • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
  • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
  • C11D7/22—Organic compounds
  • C11D7/26—Organic compounds containing oxygen
  • C11D7/265—Carboxylic acids or salts thereof
• • C—CHEMISTRY; METALLURGY
  • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
  • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
  • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
  • C11D7/22—Organic compounds
  • C11D7/32—Organic compounds containing nitrogen
  • C11D7/3218—Alkanolamines or alkanolimines
• • C—CHEMISTRY; METALLURGY
  • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
  • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
  • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
  • C11D7/22—Organic compounds
  • C11D7/32—Organic compounds containing nitrogen
  • C11D7/3245—Aminoacids
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P70/00—Cleaning of wafers, substrates or parts of devices
• • C—CHEMISTRY; METALLURGY
  • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
  • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
  • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
  • C11D2111/10—Objects to be cleaned
  • C11D2111/14—Hard surfaces
  • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Definitions

• the present invention relates to a processing liquid for semiconductor substrates.
• Semiconductor devices such as CCDs (Charge-Coupled Devices) and memories are manufactured by forming fine electronic circuit patterns on substrates using photolithography technology. Specifically, a resist film is formed on a laminate having a metal film as a wiring material, an etching stop layer, and an interlayer insulating layer on a substrate, and a photolithography process and a dry etching process (e.g., plasma etching process, etc.) are performed.
• a semiconductor device is manufactured by carrying out.
• CMP Chemical Mechanical Polishing
• residues such as polishing fine particles used in the CMP process, metal components derived from the polished wiring metal film and/or barrier metal, etc. tend to remain on the surface of the semiconductor substrate after the CMP process. Since these residues can cause short circuits between wirings and adversely affect the electrical characteristics of the semiconductor, a cleaning process is generally performed to remove these residues from the surface of the semiconductor substrate.
• Patent Document 1 A semiconductor cleaning or chemical mechanical polishing composition for processing a substrate containing cobalt, containing the following component (A-1) and the following component (A-2) and at least one selected from the group consisting of the following components (A-3), and a semiconductor cleaning or chemical mechanical polishing composition containing the following component (B): (A-1) glutamic acid, ( A-2) histidine, (A-3) cysteine, (B) at least one selected from the group consisting of inorganic acids and salts thereof”.
• the present inventors investigated the semiconductor substrate treatment liquid described in Patent Document 1 and the like, and found that (1) storage stability, (2) corrosion resistance of tungsten, and (3) a semiconductor substrate having tungsten after CMP treatment. It was found that at least one of the cleaning properties against The term "storage stability" means that when the semiconductor substrate processing liquid is stored, the generation of mold and bacteria in the processing liquid can be suppressed.
• an object of the present invention is to provide a semiconductor substrate treatment liquid that has excellent storage stability, excellent anticorrosion properties for tungsten, and excellent cleaning properties for semiconductor substrates containing tungsten after CMP processing.
• [1] comprising an amphoteric compound, an antibacterial agent, and an aminoalcohol;
• the amphoteric compound comprises an acid group with a pKa less than 4.5 and a basic group with a pKa greater than 4.5;
• [2] The semiconductor substrate processing liquid according to [1], wherein the amphoteric compound contains a basic amino acid.
• [4] The semiconductor substrate treatment liquid according to any one of [1] to [3], further comprising an organic acid.
• a semiconductor substrate treatment liquid which is excellent in storage stability, excellent in anticorrosiveness of tungsten, and excellent in detergency for a semiconductor substrate having tungsten after CMP processing.
• a numerical range represented by "to” means a range including the numerical values before and after "to” as lower and upper limits.
• the “content" of the component means the total content of the two or more kinds of components.
• the compounds described herein may include structural isomers, optical isomers and isotopes unless otherwise specified. Also, structural isomers, optical isomers and isotopes may be contained singly or in combination of two or more.
• ppm means “parts-per-million (10 ⁇ 6 )” and “ppb” means “parts-per-billion (10 ⁇ 9 )”.
• the weight average molecular weight (Mw) and number average molecular weight (Mn) are measured using TSKgel GMHxL, TSKgel G4000HxL, or TSKgel G2000HxL (all manufactured by Tosoh Corporation) as columns, and tetrahydrofuran is used as an eluent, a differential refractometer is used as a detector, polystyrene is used as a standard substance, and the value is converted using polystyrene as a standard substance measured by a gel permeation chromatography (GPC) analyzer.
• GPC gel permeation chromatography
• the molecular weight of compounds having a molecular weight distribution is the weight average molecular weight.
• the total mass of components excluding the solvent in the treatment liquid means the total content of all components contained in the treatment liquid other than solvents such as water and organic solvents.
• the semiconductor substrate processing liquid (hereinafter also referred to as “processing liquid”) of the present invention contains an amphoteric compound (hereinafter also referred to as "specific compound”), an antibacterial agent, and an amino alcohol, wherein the amphoteric compound is It comprises acid groups with a pKa less than 4.5 and basic groups with a pKa greater than 4.5, wherein the number of basic groups is greater than the number of acid groups.
• processing liquid contains an amphoteric compound (hereinafter also referred to as "specific compound”), an antibacterial agent, and an amino alcohol, wherein the amphoteric compound is It comprises acid groups with a pKa less than 4.5 and basic groups with a pKa greater than 4.5, wherein the number of basic groups is greater than the number of acid groups.
• the mechanism by which the problems of the present invention are solved by the above configuration is not clear, it is presumed that the above various components act cooperatively to obtain the desired effects.
• the specific compound contributes to the corrosion resistance of tungsten
• the antibacterial agent contributes to the storage stability
• the amino alcohol contributes to the corrosion resistance of tungsten.
• a protective film can be formed on the surface of tungsten in a concerted manner, which is believed to contribute to the corrosion resistance of tungsten.
• the treatment liquid contains a specific compound.
• the specific compound is a compound containing an acid group with a pKa of less than 4.5 and a basic group with a pKa of more than 4.5, wherein the number of basic groups is greater than the number of acid groups.
• a specific compound may be in the form of a salt (for example, a known salt, etc.).
• Certain compounds have acid groups with a pKa of less than 4.5.
• the pKa of the acid group is less than 4.5, preferably 4.0 or less, more preferably 3.5 or less, and even more preferably 3.0 or less.
• the lower limit is preferably 1.0 or more, more preferably 1.5 or more.
• the lowest pKa among the multiple pKas may be less than 4.5.
• the lowest first pKa is less than 4.5. Therefore, it corresponds to the above acid group.
• the specific compound has acid groups with a pKa of less than 4.5, and the number of basic groups with a pKa of more than 4.5 is
• the specific compound may further have acid groups with a pKa of 4.5 or higher, provided that the number is greater than the number of acid groups.
• the pKa of the acid group is a value in water (temperature 25° C.) calculated using Calculator Plugins (manufactured by Fujitsu). In addition, when it cannot be measured in water, the value is calculated in dimethyl sulfoxide.
• Examples of the acid group include a carboxy group, a thiol group, a sulfo group, a sulfonamide group, a phosphonic acid group, a sulfonylimide group and a phenolic hydroxyl group, with a carboxy group being preferred.
• Certain compounds have basic groups with a pKa greater than 4.5.
• the pKa of the basic group is greater than 4.5, preferably 5.0 or higher, more preferably 6.0 or higher, and even more preferably 7.0 or higher.
• the upper limit is preferably 13.0 or less, more preferably 12.5 or less.
• the highest pKa among the plurality of pKas should be greater than 4.5.
• the basic group has three pKas of 1st pKa: 1, 2nd pKa: 4, and 3rd pKa: 10, the highest 3rd pKa is over 4.5. It corresponds to a basic group.
• the specific compound when the specific compound has a plurality of basic groups, the specific compound has a basic group with a pKa of more than 4.5, and the number of basic groups with a pKa of more than 4.5 is 4. Certain compounds may also have basic groups with a pKa of 4.5 or less, provided that the number of acid groups is less than .5.
• the pKa of the basic group can be calculated by the same measuring method as the pKa of the acid group.
• the pKa of the basic group indicates the pKa of the conjugate acid of the basic group.
• Examples of the basic group include a basic group having a nitrogen atom, and specific examples include a primary amino group (—NH 2 ), a secondary amino group (>NH) such as a A tertiary amino group (>N-), a quaternary ammonium base and a heterocyclic group having a nitrogen atom as a ring member atom can be mentioned.
• secondary amino groups, tertiary amino groups and quaternary ammonium bases when constituting a ring member atom, are classified as heterocyclic groups having a nitrogen atom as a ring member atom, and amino groups of different classes If so, it is classified as the highest amino group.
• the heterocyclic group having a nitrogen atom as a ring member atom may be either an aliphatic heterocyclic group having a nitrogen atom as a ring member atom or an aromatic heterocyclic group having a nitrogen atom as a ring member atom.
• heterocyclic groups include aliphatic heterocyclic groups such as pyrrolidine ring groups and piperidine ring groups, and aromatic heterocyclic groups such as pyridine ring groups, imidazole ring groups and indole ring groups.
• the basic group is a group selected from the group consisting of a primary amino group, a secondary amino group, a tertiary amino group, a quaternary ammonium base and a heterocyclic group having a nitrogen atom as a ring member atom. It preferably contains at least one, and more preferably contains at least one group selected from the group consisting of a primary amino group, a secondary amino group and a heterocyclic group having a nitrogen atom as a ring member atom.
• the number of basic groups with a pKa greater than 4.5 is greater than the number of acid groups with a pKa less than 4.5.
• the value obtained by subtracting the number of acid groups from the number of basic groups is 1 or more, preferably 1 to 5, 1 or 2 is more preferred.
• the number of acid groups is 1 or more, preferably 1 to 10, more preferably 1 to 3, and still more preferably 1.
• the number of basic groups is 2 or more, preferably 2 to 11, more preferably 2 to 4, and even more preferably 2.
• the specific compound preferably contains a basic amino acid, and more preferably contains at least one compound selected from the group consisting of arginine, histidine, lysine, ornithine, 2,4-diaminobutyric acid, tryptophan, asparagine and glutamine. , arginine, histidine, lysine, ornithine and 2,4-diaminobutyric acid, and at least one compound selected from the group consisting of arginine, histidine and lysine. and particularly preferably arginine.
• the specific compound may be used alone or in combination of two or more, preferably two or more (for example, two).
• the content of the specific compound is often 0.01 to 70.0% by mass, preferably 0.2 to 70.0% by mass, based on the total mass of the components excluding the solvent in the treatment liquid. 0 to 50.0% by mass is more preferable, 3.0 to 40.0% by mass is even more preferable, and 5.0 to 20.0% by mass is particularly preferable.
• the treatment liquid contains an antibacterial agent.
• An antibacterial agent is a compound having an antibacterial action against bacteria and/or an antifungal action against fungi, and is a compound different from the specific compound described above and various components described later.
• the antibacterial agent may be in the form of a salt (eg, known salt, etc.).
• antibacterial agents examples include cationic antibacterial agents (antibacterial agents having a cationic structure), carboxylic acid antibacterial agents (antibacterial agents having a carboxyl group), phenolic antibacterial agents (antibacterial agents having a phenolic hydroxyl group), isothiazoline Antibacterial agents (antibacterial agents having an isothiazoline structure), alcohol-based antibacterial agents (antibacterial agents having a hydroxyl group), peracetic acid and hydrogen peroxide are included.
• An antibacterial agent having a carboxyl group and a phenolic hydroxyl group is classified as a carboxylic acid antibacterial agent.
• cationic antibacterial agents examples include benzalkonium chloride, benzethonium chloride and domiphen bromide, with benzethonium chloride being preferred.
• Carboxylic acid-based antibacterial agents include, for example, unsaturated carboxylic acids such as sorbic acid, and aromatic carboxylic acids such as benzoic acid and salicylic acid, with sorbic acid, benzoic acid, or salicylic acid being preferred.
• Phenolic antimicrobial agents include, for example, cresol, chlorothymol, dichloroxylenol and hexachlorophene.
• isothiazoline-based antibacterial agents examples include methylchloroisothiazolinone and methylisothiazolinone.
• Alcohol-based antibacterial agents include, for example, phenoxyethanol, 1,2-pentanediol and 1,2-hexanediol.
• the antibacterial agent preferably contains at least one antibacterial agent selected from the group consisting of cationic antibacterial agents, carboxylic acid antibacterial agents, phenol antibacterial agents, isothiazoline antibacterial agents, and alcohol antibacterial agents. It is more preferable to contain at least one antibacterial agent selected from the group consisting of carboxylic acid antibacterial agents and isothiazolinone antibacterial agents, benzathonium chloride, salicylic acid, benzoic acid, sorbic acid, methylchloroisothiazolinone and methylisothiazolinone. It is further preferred to include at least one antimicrobial agent selected from the group consisting of
• the antibacterial agent may be used alone or in combination of two or more, preferably two or more (for example, two).
• the content of the antibacterial agent is preferably 0.01 to 30.0% by mass, more preferably 0.05 to 12.0% by mass, more preferably 0.05 to 12.0% by mass, based on the total mass of the components in the treatment liquid excluding the solvent. 1 to 10.0% by mass is more preferable, and 0.2 to 5.0% by mass is particularly preferable.
• aminoalcohol is a compound having one or more amino groups selected from primary amino groups, secondary amino groups and tertiary amino groups, and one or more hydroxyl groups.
• Aminoalcohols are compounds different from the various components described above.
• Amino alcohols include, for example, primary amino alcohols, secondary amino alcohols and tertiary amino alcohols.
• Examples of primary amino alcohols include tris(hydroxymethyl)aminomethane (Tris), monoethanolamine (MEA), 2-amino-1,3-propanediol, 3-amino-1,2-propanediol, 1,3-diamino-2-propanol, 2-amino-2-methyl-1-propanol (AMP), 3-amino-1-propanol, 1-amino-2-propanol, diethylene glycolamine (DEGA) and 2-( aminoethoxy)ethanol (AEE).
• Tris tris(hydroxymethyl)aminomethane
• MEA monoethanolamine
• MEA 2-amino-1,3-propanediol
• 3-amino-1,2-propanediol 1,3-diamino-2-propanol
• 2-amino-2-methyl-1-propanol 2-amino-2-methyl-1-propanol
• AMP 2-amino-2-methyl-1-propanol
• Secondary amino alcohols include, for example, 1,3-bis[tris(hydroxymethyl)methylamino]propane, uracil, N-methylethanolamine, 2-(ethylamino)ethanol, 2-[(hydroxymethyl)amino ] ethanol, 2-(propylamino)ethanol, N,N′-bis(2-hydroxyethyl)ethylenediamine, diethanolamine, 2-(2-aminoethylamino)ethanol (AAE), N-butylethanolamine and N-cyclohexyl Ethanolamine is mentioned.
• Tertiary amino alcohols include, for example, bis(2-hydroxyethyl)aminotris(hydroxymethyl)methane (Bis-Tris-Propane), N-methyldiethanolamine (MDEA), 2-(dimethylamino)ethanol (DMAE) , N-ethyldiethanolamine (EDEA), 2-diethylaminoethanol, 2-(dibutylamino)ethanol, 2-[2-(dimethylamino)ethoxy]ethanol, 2-[2-(diethylamino)ethoxy]ethanol, triethanolamine , N-butyldiethanolamine (BDEA), N-tert-butyldiethanolamine (t-BDEA), 1-[bis(2-hydroxyethyl)amino]-2-propanol (Bis-HEAP), 1-(2-hydroxyethyl ) piperazine (HEP), 1,4-bis(2-hydroxyethyl)piperazine (BHEP), 2-(N-ethylanilino)ethanol,
• Amino alcohols also preferably include amino alcohols having quaternary carbon atoms.
• the aminoalcohol may have one or more quaternary carbon atoms.
• Amino alcohols with quaternary carbon atoms include, for example, Tris, Bis-Tris and Bis-Tris-Propane.
• Amino alcohols include Tris, MEA, Bis-Tris, Bis-Tris-Propane, 2-amino-1,3-propanediol, 3-amino-1,2-propanediol, 1,3-diamino-2-propanol and It preferably contains at least one compound selected from the group consisting of MDEA, Tris, Bis-Tris, Bis-Tris-Propane, 2-amino-1,3-propanediol and 3-amino-1,2-propane More preferably, it contains at least one compound selected from the group consisting of diols, and even more preferably at least one compound selected from the group consisting of Tris, Bis-Tris and Bis-Tris-Propane.
• Amino alcohols may be used singly or in combination of two or more, preferably two or more (for example, two).
• the content of the amino alcohol is preferably 0.01 to 80.0% by mass, more preferably 2.0 to 72.0% by mass, based on the total mass of the components excluding the solvent in the treatment liquid. 0 to 68.0% by mass is more preferable, and 10.0 to 60.0% by mass is particularly preferable.
• the mass ratio of the content of the specific compound to the content of the antibacterial agent is often 0.10 to 1000.00, preferably 1.00 to 60.00. , more preferably 2.00 to 55.00, still more preferably 3.00 to 50.00, and particularly preferably 3.00 to 30.00.
• the mass ratio of the amino alcohol content to the antibacterial agent content is often 1.00 to 4000.00, preferably 4.00 to 180.00. , 10.00 to 150.00 are more preferred.
• the mass ratio of the content of the specific compound to the content of amino alcohol is often 0.01 to 20.00, preferably 0.10 to 6.00. , more preferably 0.12 to 4.00, and even more preferably 0.20 to 2.00.
• the treatment liquid may contain an organic acid.
• Organic acids are compounds that are different from the various components described above. Examples thereof include organic acids that do not have an antibacterial action against bacteria and an antifungal action against fungi.
• Examples of the organic acid include carboxylic acid-based organic acids such as aliphatic carboxylic acid-based organic acids and aromatic carboxylic acid-based organic acids, and phosphonic acid-based organic acids. Acids or tricarboxylic acids are more preferred, and tricarboxylic acids are even more preferred.
• the organic acid may be in the form of a salt. Examples of the above salts include sodium salts, potassium salts, ammonium salts and organic amine salts.
• a carboxylic organic acid is a compound having one or more carboxy groups.
• the carboxylic organic acid may further have a hydroxyl group as a functional group other than the carboxyl group.
• the number of carboxyl groups possessed by the carboxylic organic acid is preferably 1-10, more preferably 2-10, and even more preferably 3-5.
• aliphatic carboxylic organic acids examples include oxalic acid, malonic acid, succinic acid, glutaric acid, adipic acid, pimelic acid, sebacic acid, maleic acid, malic acid, citric acid, tartaric acid, glycolic acid and gluconic acid. Citric acid, malic acid, tartaric acid or oxalic acid are preferred, and citric acid is more preferred.
• aromatic carboxylic organic acids include phthalic acid, isophthalic acid, terephthalic acid, gallic acid, trimellitic acid, mellitic acid and cinnamic acid, with trimellitic acid being preferred.
• Examples of the phosphonic acid-based organic acid include compounds described in paragraphs [0026] to [0036] of WO 2018/020878 and paragraphs [0031] to [0046] of WO 2018/030006. compounds, the contents of which are incorporated herein.
• the organic acid preferably contains at least one organic acid selected from the group consisting of citric acid, glycolic acid, malic acid, tartaric acid, gluconic acid, oxalic acid and trimellitic acid, citric acid, malic acid, tartaric acid and It more preferably contains at least one organic acid selected from the group consisting of oxalic acid, and more preferably contains citric acid.
• the content of the organic acid is preferably 5.0 to 98.0% by mass, more preferably 10.0 to 60.0% by mass, relative to the total mass of the components excluding the solvent in the treatment liquid. 0 to 50.0% by mass is more preferable.
• the treatment liquid may contain a polymer.
• a water-soluble polymer is preferred.
• Water-soluble polymer means a compound in which two or more constitutional units are linked in a linear or mesh-like manner via covalent bonds, and has a mass of 0.1 g or more that dissolves in 100 g of water at 20°C. means coalescence.
• water-soluble polymers include polyacrylic acid, polymethacrylic acid, polymaleic acid, polyvinylsulfonic acid and salts thereof; monomers such as styrene, ⁇ -methylstyrene and/or 4-methylstyrene; acid and / or copolymers with acid monomers such as maleic acid, and salts thereof; polyglycerin; polyvinyl alcohol, polyoxyethylene, polyvinylpyrrolidone, polyvinylpyridine, polyacrylamide, polyvinylformamide, polyethyleneimine, polyvinyloxazoline, Vinyl-based synthetic polymers such as polyvinylimidazole and polyallylamine; modified products of natural polysaccharides such as hydroxyethyl cellulose, carboxymethyl cellulose and modified starch.
• the water-soluble polymer may be either a polymer obtained by polymerizing one type of monomer or a copolymer obtained by copolymerizing two or more types of monomers.
• Monomers include, for example, a monomer having a carboxy group, a monomer having a hydroxy group, a monomer having a polyethylene oxide chain, a monomer having an amino group, and a monomer having a heterocyclic ring.
• a monomer selected from the group is included.
• the content of structural units derived from a monomer selected from the above group in the water-soluble polymer is preferably 95 to 100% by mass, more preferably 99 to 100% by mass, based on the total mass of the water-soluble polymer. preferable.
• polymers examples include water-soluble polymers described in paragraphs [0043] to [0047] of JP-A-2016-171294, the contents of which are incorporated herein.
• the molecular weight of the polymer (weight average molecular weight when it has a molecular weight distribution) is preferably 300 or more, more preferably over 600, even more preferably 2,000 or more, and particularly preferably 10,000 or more.
• the upper limit is preferably 1,500,000 or less, more preferably 1,000,000 or less.
• the weight average molecular weight of the water-soluble polymer is preferably 300 or more, more preferably 2,000 or more, and even more preferably 10,000 or more.
• the upper limit is preferably 1,500,000 or less, more preferably 1,200,000 or less, even more preferably 1,000,000 or less.
• the polymer preferably has a structural unit having a carboxy group (for example, a structural unit derived from (meth)acrylic acid).
• the content of structural units having a carboxy group is preferably 30 to 100% by mass, more preferably 70 to 100% by mass, and even more preferably 85 to 100% by mass, relative to the total mass of the polymer.
• the content of the polymer is preferably 0.000001 to 50% by mass, more preferably 0.00001 to 20% by mass, and 0.0001 to 10% by mass with respect to the total mass of the components of the treatment liquid excluding the solvent. is more preferred.
• the content of the polymer is within the above range, the polymer is moderately adsorbed on the surface of the substrate and contributes to the improvement of the metal corrosion prevention performance of the treatment liquid, and the viscosity and/or cleaning performance of the treatment liquid. Excellent balance.
• the treatment liquid may contain a solvent.
• solvents include water and organic solvents, with water being preferred.
• Water includes, for example, distilled water, deionized water, and pure water (ultrapure water).
• pure water is preferable because it has less influence on the semiconductor substrate in the manufacturing process of the semiconductor substrate.
• the content of water is not particularly limited as long as it is the remainder of the components that can be contained in the treatment liquid. Specifically, the water content is preferably 1.0% by mass or more, more preferably 30.0% by mass or more, still more preferably 50.0% by mass or more, and 60% by mass or more of the total mass of the treatment liquid. 0% by mass or more is particularly preferred.
• the upper limit is preferably 99.99% by mass or less, more preferably 99.9% by mass or less, and even more preferably 99.0% by mass or less, relative to the total mass of the treatment liquid.
• organic solvents include known organic solvents, and hydrophilic organic solvents such as alcohols and ketones are preferred.
• examples of the organic solvent include organic solvents described in paragraphs [0043] to [0060] of JP-A-2021-052186, the contents of which are incorporated herein.
• the treatment liquid may contain other components in addition to the various components described above.
• Other components include, for example, amine compounds, quaternary ammonium compounds, pH adjusters, surfactants and fluorine compounds.
• Other components may be used singly or in combination of two or more.
• the amine compound is a compound different from the various components that may be contained in the treatment liquid described above.
• Amine compounds are compounds having at least one amino group selected from the group consisting of primary amino groups, secondary amino groups and tertiary amino groups. When the amine compound has amino groups of different series, the amine compound is classified as an amine compound having the highest amino group among them.
• Amine compounds include, for example, aliphatic amines and guanidine compounds other than arginine.
• the amine compound may be either chain (linear or branched) or cyclic.
• aliphatic amine examples include primary aliphatic amines (aliphatic amines having a primary amino group), secondary aliphatic amines (aliphatic amines having a secondary amino group) and tertiary aliphatic amines. amines (aliphatic amines with a tertiary amino group).
• Examples of primary chain aliphatic amines include methylamine, ethylamine, propylamine, dimethylamine, diethylamine, n-butylamine, 3-methoxypropylamine, tert-butylamine, n-hexylamine, n-octylamine and 2-ethylhexylamine may be mentioned.
• Examples of primary cycloaliphatic amines include cyclohexylamine.
• secondary chain aliphatic amines examples include ethylenediamine (EDA), 1,3-propanediamine (PDA), 1,2-propanediamine, 1,3-butanediamine and 1,4-butanediamine.
• Alkylenediamines include polyalkylpolyamines such as diethylenetriamine (DETA), triethylenetetramine (TETA), bis(aminopropyl)ethylenediamine (BAPEDA) and tetraethylenepentamine.
• Secondary cycloaliphatic amines include, for example, piperazine, 2-methylpiperazine, 2,5-dimethylpiperazine and 2,6-dimethylpiperazine.
• tertiary aliphatic amines examples include tertiary aliphatic amines having a tertiary amino group in the molecule and no aromatic ring group.
• the tertiary chain aliphatic amines include, for example, tertiary alkylamines such as trimethylamine and triethylamine, alkylenediamines such as 1,3-bis(dimethylamino)butane, and N,N,N',N' and polyalkylpolyamines such as ',N''-pentamethyldiethylenetriamine.
• tertiary alkylamines such as trimethylamine and triethylamine
• alkylenediamines such as 1,3-bis(dimethylamino)butane
• N,N,N',N' and polyalkylpolyamines such as ',N''-pentamethyldiethylenetriamine.
• Tertiary cyclic aliphatic amines include, for example, tertiary aliphatic amines having a nitrogen atom as a ring member atom and a non-aromatic hetero ring.
• Tertiary cycloaliphatic amines include, for example, cyclic amidine compounds and piperazine compounds.
• the number of ring members of the above hetero ring in the cyclic amidine compound is preferably 5 to 6, more preferably 6.
• Cyclic amidine compounds include, for example, diazabicycloundecene (1,8-diazabicyclo[5.4.0]undec-7-ene: DBU), diazabicyclononene (1,5-diazabicyclo[4.3.
• a piperazine compound is a compound having a 6-membered hetero ring (piperazine ring) in which a tertiary amino group (>N-) is substituted for the opposing -CH- group of the cyclohexane ring.
• piperazine compounds include 1-methylpiperazine, 1-ethylpiperazine, 1-propylpiperazine, 1-butylpiperazine, 1,4-dimethylpiperazine, 1-phenylpiperazine, N-(2-aminoethyl)piperazine (AEP ), 1,4-bis(2-aminoethyl)piperazine (BAEP), 1,4-bis(3-aminopropyl)piperazine (BAPP) and 1,4-diazabicyclo[2.2.2]octane (DABCO) and DABCO is preferred.
• AEP N-(2-aminoethyl)piperazine
• BAEP 1,4-bis(2-aminoethyl)piperazine
• BAPP 1,4-bis(3-aminopropyl)piperazine
• DABCO 1,4-diazabicyclo[2.2.2]octane
• DABCO 1,4-diazabicyclo[2.2.2]octane
• tertiary cycloaliphatic amine examples include compounds having a five-membered hetero ring and compounds having a seven-membered nitrogen ring, which do not have aromaticity, such as 1,3-dimethyl-2-imidazolidinone. mentioned.
• the quaternary ammonium compound is a compound different from the components contained in the treatment liquid described above.
• Examples of quaternary ammonium compounds include quaternary ammonium hydroxide, quaternary ammonium fluoride, quaternary ammonium bromide, quaternary ammonium iodide, quaternary ammonium acetate and quaternary ammonium carbonate.
• quaternary ammonium compounds include tris(2-hydroxyethyl)methylammonium hydroxide (THEMAH), tetramethylammonium hydroxide (TMAH), trimethylethylammonium hydroxide (TMEAH), dimethyldiethylammonium hydroxide (DMDEAH), ), methyltriethylammonium hydroxide (MTEAH), tetraethylammonium hydroxide (TEAH), tetrapropylammonium hydroxide (TPAH), tetrabutylammonium hydroxide (TBAH), 2-hydroxyethyltrimethylammonium hydroxide (choline), bis (2-hydroxyethyl)dimethylammonium hydroxide, tri(2-hydroxyethyl)methylammonium hydroxide, tetra(2-hydroxyethyl)ammonium hydroxide, benzyltrimethylammonium hydroxide (BTMAH) and cetyltrimethylammonium hydroxide
• the quaternary ammonium compound has an asymmetric structure.
• the quaternary ammonium compound "having an asymmetric structure” means that the four substituents (eg, hydrocarbon groups, etc.) substituted on the nitrogen atom are not the same.
• Quaternary ammonium compounds with asymmetric structures include, for example, THEMAH, TMEAH, DEDMAH, TEMAH, choline and bis(2-hydroxyethyl)dimethylammonium hydroxide.
• the pH adjuster is a compound different from the components contained in the treatment liquid described above.
• Examples of pH adjusters include basic compounds and acidic compounds. Further, the pH of the treatment liquid may be adjusted by adjusting the addition amount of various components that may be contained in the treatment liquid described above. Examples of pH adjusters include paragraphs [0053] to [0054] of WO2019-151141 and paragraph [0021] of WO2019-151001, the contents of which are incorporated herein. be
• the content of the pH adjuster is appropriately adjusted according to the types and amounts of other components and the desired pH of the treatment liquid.
• the content of the pH adjuster is preferably 0.2 to 20.0% by mass, more preferably 1.0 to 10.0% by mass, based on the total mass of the components excluding the solvent in the treatment liquid. 0.5 to 5.0 mass % is more preferable.
• a surfactant is a compound having a hydrophilic group and a hydrophobic group (lipophilic group) in one molecule.
• Surfactants include, for example, anionic surfactants, cationic surfactants, nonionic surfactants and amphoteric surfactants.
• surfactants include those described in paragraphs [0091] to [0109] of WO2021/054009, the contents of which are incorporated herein.
• the content of the surfactant is preferably 1.0 to 30.0% by mass, more preferably 5.0 to 20.0% by mass, based on the total mass of the components excluding the solvent in the treatment liquid. 0 to 20.0% by mass is more preferable.
• fluorine compounds include compounds described in paragraphs [0013] to [0015] of JP-A-2005-150236, the contents of which are incorporated herein.
• the content of various components that can be contained in the treatment liquid is determined by a gas chromatography-mass spectrometry (GC-MS) method, a liquid chromatography-mass spectrometry (LC-MS) method, And it can be measured by a known method such as ion-exchange chromatography (IC).
• GC-MS gas chromatography-mass spectrometry
• LC-MS liquid chromatography-mass spectrometry
• the pH of the treatment liquid is often 1.0 to 13.0, preferably 4.0 to 8.0, more preferably 5.0 to 7.0.
• the pH of the treatment liquid before dilution is often 1.0 to 13.0, preferably 3.0 to 9.0, more preferably 4.0 to 8.0.
• the pH of the treatment solution after dilution (for example, 200-fold dilution (volume ratio), etc.) is often 1.0 to 13.0, preferably 3.5 to 9.0, and 4.0 to 8.0. is more preferred, and 5.0 to 7.0 is even more preferred.
• the pH of the treatment liquid can be measured by a method conforming to JIS Z8802-1984 using a known pH meter. The above pH is a value at a measurement temperature of 25°C.
• the content (measured as ion concentration) of metal impurities is the total mass of the treatment liquid.
• any metal impurity is preferably 5 mass ppm or less, more preferably 1 mass ppm or less.
• the content of the metal impurities is more preferably 100 mass ppb or less, particularly preferably less than 10 mass ppb, with respect to the total mass of the treatment liquid, and is below the detection limit. is most preferred.
• the lower limit is often 0 mass ppb or more with respect to the total mass of the treatment liquid.
• purification treatment such as distillation and filtration using an ion exchange resin or filter is performed at the stage of the raw material used when producing the treatment liquid or at the stage after the production of the treatment liquid. Things are mentioned.
• Another method for reducing the metal content is to use a container in which impurities are less eluted, as described later, as a container for containing the raw material or the produced treatment liquid.
• the inner walls of the pipes may be lined with a fluororesin.
• the total content of inorganic particles and organic particles is preferably 1.0% by mass or less, more preferably 0.1% by mass or less, still more preferably 0.01% by mass or less, relative to the total mass of the treatment liquid.
• a limit value or less is particularly preferred.
• the lower limit is preferably 0% by mass or more with respect to the total mass of the treatment liquid.
• Inorganic particles and organic particles that can be contained in the processing liquid include particles such as organic solids and inorganic solids contained as impurities in the raw materials, and organic solids and inorganic solids brought in as contaminants during the preparation of the processing liquid. and the like, which do not finally dissolve in the treatment liquid and exist as particles.
• the content of inorganic particles and organic particles present in the treatment liquid can be measured in the liquid phase using a commercially available measuring device in the light scattering type in-liquid particle measurement system using a laser as a light source.
• methods for removing inorganic particles and organic particles include purification treatment such as filtering, which will be described later.
• the treatment liquid can be produced by a known method.
• the method for producing the treatment liquid preferably includes a liquid preparation step.
• the process of preparing the treatment liquid is, for example, a process of preparing the treatment liquid by mixing various components that may be contained in the treatment liquid described above.
• the order and timing of mixing the above various components are not particularly limited.
• Examples of the liquid preparation step include a method of adding and stirring various components to a container containing purified pure water (ultrapure water), and adding a pH adjuster as necessary to prepare the solution. .
• the method of adding the pure water and the various components to the container may be either batch addition or divided addition.
• Examples of the stirring method in the treatment liquid preparation step include a method of stirring using a known stirrer or a known disperser.
• Examples of the stirrer include industrial mixers, portable stirrers, mechanical stirrers and magnetic stirrers.
• Examples of the disperser include industrial dispersers, homogenizers, ultrasonic dispersers and bead mills.
• the temperature for mixing the above various components in the preparation process of the treatment liquid, the purification treatment described later, and the storage temperature of the produced treatment liquid is preferably 40°C or lower, more preferably 30°C or lower.
• the lower limit is preferably 5°C or higher, more preferably 10°C or higher.
• At least one of the raw materials of the treatment liquid is preferably subjected to purification treatment before the liquid preparation step.
• the purity of the raw material after purification treatment is preferably 99% by mass or more, more preferably 99.9% by mass or more.
• the upper limit is preferably 99.9999% by mass or less.
• the purification treatment includes, for example, distillation treatment, and known methods such as ion exchange resin, RO membrane (Reverse Osmosis Membrane) and filtering treatment such as filtration, which will be described later.
• the purification treatment may be performed by combining a plurality of the above purification methods. For example, after performing a primary purification treatment in which the raw material is passed through an RO membrane, the obtained raw material is further passed through a purification device consisting of a cation exchange resin, an anion exchange resin, or a mixed bed ion exchange resin. A purification treatment may be performed. Further, the refining process may be performed multiple times.
• Filters used for filtering include, for example, known filtering filters.
• fluorine resin such as polytetrafluoroethylene (PTFE) and tetrafluoroethylene perfluoroalkyl vinyl ether copolymer (PFA)
• nylon Polyamide resins such as, and polyolefin resins such as polyethylene and polypropylene (PP) (including high-density or ultra-high molecular weight), polyethylene, polypropylene (including high-density polypropylene), fluororesins (including PTFE and PFA ) or polyamide resins (including nylon) are preferred, and fluororesins are more preferred.
• the critical surface tension of the filter is preferably 70-95 mN/m, more preferably 75-85 mN/m. When the critical surface tension is within the above range, highly polar foreign matter that tends to cause defects can be removed. The manufacturer's nominal value can be used for the critical surface tension of the filter.
• the pore size of the filter is preferably 2-20 nm, more preferably 2-15 nm.
• the manufacturer's nominal value can be used for the pore size of the filter.
• Filtering may be performed once or more than once. When filtering is performed more than once, the filters used for filtering may be the same or different.
• the filtering temperature is preferably 25°C or lower, more preferably 23°C or lower, and even more preferably 20°C or lower.
• the lower limit is preferably 0°C or higher, more preferably 5°C or higher, and even more preferably 10°C or higher.
• the treatment liquid (including the embodiment of the diluted treatment liquid to be described later) can be stored, transported and used by being filled in any container as long as the container is not corroded.
• the container it is preferable to use a container for use in semiconductors that has a high degree of cleanliness inside and that suppresses the elution of impurities from the inner wall of the storage portion of the container into the processing liquid.
• the container include a commercially available container for a semiconductor processing liquid. Specifically, Clean Bottle Series (manufactured by Aicello Chemical Co., Ltd.) and Pure Bottle (manufactured by Kodama Resin Industry Co., Ltd.) may be mentioned.
• a container in which the liquid-contacting part such as the inner wall of the containing part of the container is made of fluororesin (perfluoro resin) or a metal subjected to rust prevention treatment and metal elution prevention treatment. preferable.
• the inner wall of the container is made of at least one resin selected from the group consisting of polyethylene resin, polypropylene resin and polyethylene-polypropylene resin or a resin different from the above resins, or rust-proofing such as stainless steel, Hastelloy, Inconel and Monel, and metal. It is preferably made of a metal that has undergone an elution prevention treatment.
• a fluorine resin perfluoro resin
• a container whose inner wall is made of fluororesin can suppress the elution of oligomers of ethylene and propylene compared to a container whose inner wall is made of polyethylene resin, polypropylene resin or polyethylene-polypropylene resin.
• Examples of the container whose inner wall is a fluororesin include FluoroPure PFA composite drum (manufactured by Entegris), Japanese Patent Publication No. 3-502677, International Publication No. 2004/016526, and International Publication No. 99/046309. container.
• the inner wall of the container is preferably made of quartz and an electropolished metal material (electropolished metal material) other than the fluororesin.
• the metal material used for manufacturing the electropolished metal material contains at least one selected from the group consisting of chromium and nickel, and the total content of chromium and nickel is 25 mass with respect to the total mass of the metal material. % is preferred. Examples include stainless steel and nickel-chromium alloys. The total content of chromium and nickel in the metal material is more preferably 30% by mass or more with respect to the total mass of the metal material. The upper limit is preferably 90% by mass or less with respect to the total mass of the metal material.
• Examples of the method of electropolishing a metal material include known methods, specifically, paragraphs [0011] to [0014] of JP-A-2015-227501 and paragraphs of JP-A-2008-264929. [0036] to [0042].
• the inside of the container is cleaned before being filled with the processing liquid.
• the washing method include known methods.
• the liquid used for cleaning has a reduced amount of metal impurities in the liquid.
• the treatment liquid may be bottled in a container such as a gallon bottle or a coated bottle, and transported and stored.
• an inert gas for example, nitrogen, argon, etc.
• the temperature for transportation and storage may be controlled at room temperature (25°C) or -20°C to 20°C.
• a dilution step of diluting the treatment liquid obtained in the liquid preparation step with a diluent such as water may be performed.
• the diluted treatment liquid obtained in the dilution step is one form of the treatment liquid of the present invention as long as it satisfies the requirements of the present invention.
• the dilution ratio of the diluted treatment liquid in the dilution step can be appropriately adjusted according to the types and contents of various components that may be contained in the treatment liquid, the semiconductor substrate to be cleaned, and the like.
• the dilution ratio of the diluted treatment solution to the treatment solution before dilution is preferably 10 to 10,000 times, more preferably 20 to 3,000 times, and even more preferably 50 to 1,000 times in terms of mass ratio or volume ratio (volume ratio at 23°C). .
• the change in pH before and after dilution (the difference between the pH of the treatment liquid before dilution and the pH of the diluted treatment liquid) is preferably 2.5 or less, more preferably 1.8 or less, and even more preferably 1.5 or less.
• the lower limit is preferably 0.1 or more.
• the dilution process may be carried out according to the process for preparing the treatment liquid described above.
• Examples of the stirring device and stirring method used in the dilution step include the known stirring device and stirring method used in the liquid preparation step.
• the water used in the dilution step is preferably purified before use. Further, it is also preferable to perform a purification treatment on the diluted treated liquid obtained by the dilution step.
• the purification treatment include ion component reduction treatment using an ion exchange resin, RO membrane, etc., and foreign matter removal using filtering as purification treatment for the above-mentioned treated liquid, and any one of these treatments is preferably performed.
• the cleanroom preferably meets 14644-1 cleanroom standards. Further, it preferably satisfies any of ISO (International Organization for Standardization) Class 1, ISO Class 2, ISO Class 3 and ISO Class 4, more preferably satisfies ISO Class 1 or ISO Class 2, and satisfies ISO Class 1. is more preferred.
• ISO International Organization for Standardization
• the treatment liquid is preferably used in a cleaning step for cleaning a semiconductor substrate, and more preferably used in a cleaning step for cleaning a semiconductor substrate containing tungsten that has been subjected to CMP processing.
• the treatment liquid can also be used for cleaning semiconductor substrates in the manufacturing process of semiconductor substrates.
• the diluted processing liquid obtained by diluting the processing liquid may be used for cleaning the semiconductor substrate.
• Objects to be cleaned with the treatment liquid include, for example, a semiconductor substrate having a metal film containing tungsten (W) on the semiconductor substrate.
• “on the semiconductor substrate” includes, for example, both the front and rear surfaces, the side surfaces, and the inside of the grooves of the semiconductor substrate.
• the metal film on the semiconductor substrate includes not only the case where the metal film is directly on the surface of the semiconductor substrate, but also the case where the metal film is on the semiconductor substrate via another layer.
• Examples of the metal contained in the metal film include W (tungsten).
• the metal film may contain other metals than W.
• Other metals include, for example, Cu (copper), Co (cobalt), Ti (titanium), Ta (tantalum), Ru (ruthenium), Cr (chromium), Hf (hafnium), Os (osmium), Pt ( platinum), Ni (nickel), Mn (manganese), Zr (zirconium), Mo (molybdenum), La (lanthanum) and Ir (iridium).
• Examples of the semiconductor substrate to be cleaned with the processing liquid include a substrate having a metal wiring film, a barrier metal and an insulating film on the surface of the wafer constituting the semiconductor substrate.
• Wafers constituting the semiconductor substrate include, for example, silicon (Si) wafers, silicon carbide (SiC) wafers, wafers made of silicon-based materials such as resin-based wafers containing silicon (glass epoxy wafers), gallium phosphide (GaP ) wafers, gallium arsenide (GaAs) wafers, and indium phosphide (InP) wafers.
• silicon wafers include n-type silicon wafers obtained by doping silicon wafers with pentavalent atoms (e.g., phosphorus (P), arsenic (As) and antimony (Sb)), and silicon wafers with trivalent atoms.
• Examples include p-type silicon wafers doped with (eg, boron (B), gallium (Ga), etc.).
• the silicon of the silicon wafer includes, for example, amorphous silicon, monocrystalline silicon, polycrystalline silicon and polysilicon.
• the wafer is preferably a wafer made of a silicon-based material such as a silicon wafer, a silicon carbide wafer, and a resin-based wafer containing silicon (glass epoxy wafer).
• the semiconductor substrate may further have an insulating film on the wafer described above.
• insulating films include silicon oxide films (eg, silicon dioxide (SiO 2 ) films and tetraethyl orthosilicate (Si(OC 2 H 5 ) 4 ) films (TEOS films)), silicon nitride films (eg, silicon nitride films), and the like. (Si 3 N 4 ) and silicon nitride carbide (SiNC)), and low dielectric constant (Low-k) films (such as carbon-doped silicon oxide (SiOC) films and silicon carbide (SiC) films). .
• the metal film containing tungsten includes, for example, a metal film made of only metal tungsten (tungsten metal film) and a metal film made of an alloy made of tungsten and a metal other than tungsten (tungsten alloy metal film). is mentioned.
• the tungsten alloy metal film include a tungsten-titanium alloy metal film (WTi alloy metal film) and a tungsten-cobalt alloy metal film (WCo alloy metal film).
• Tungsten-containing films can be used, for example, in connections between barrier metals or vias and interconnects.
• the method for forming the insulating film and the tungsten-containing film on the wafer constituting the semiconductor substrate is not particularly limited as long as it is a known method.
• a method for forming an insulating film for example, a wafer constituting a semiconductor substrate is subjected to a heat treatment in the presence of oxygen gas to form a silicon oxide film, and then silane and ammonia gases are introduced, followed by chemical treatment.
• a method of forming a silicon nitride film by chemical vapor deposition (CVD) can be used.
• a method for forming a tungsten-containing film for example, a circuit is formed on a wafer having the insulating film by a known method such as a resist, and then a tungsten-containing film and a cobalt-containing film are formed by a method such as plating and CVD.
• a method of forming a membrane can be mentioned.
• the CMP process is a process for flattening the surface of a substrate having, for example, a metal wiring film, a barrier metal and an insulating film, by a combined action of chemical action using a polishing slurry containing polishing fine particles (abrasive grains) and mechanical polishing.
• Impurities such as abrasive grains (for example, silica, alumina, etc.) used in the CMP process, metal impurities (metal residue) derived from the polished metal wiring film and barrier metal are present on the surface of the semiconductor substrate subjected to the CMP process. may remain. Further, organic impurities derived from the CMP treatment liquid used in the CMP treatment may remain.
• polishing liquids include polishing liquids containing iron ions and hydrogen peroxide, or polishing liquids containing chemically modified colloidal silica (for example, cationized and anionized modifications). Examples of the polishing liquid include polishing liquids containing iron complexes described in JP-A-2020-068378, JP-A-2020-015899 and US Pat. Polishing fluids containing colloidal silica are preferred.
• the surface of the semiconductor substrate to be cleaned with the treatment liquid may be buffed after being subjected to CMP.
• Buffing is a process that uses a polishing pad to reduce impurities on the surface of a semiconductor substrate. Specifically, the surface of the semiconductor substrate subjected to the CMP treatment is brought into contact with the polishing pad, and the semiconductor substrate and the polishing pad are slid relative to each other while supplying the buffing composition to the contact portion. As a result, impurities on the surface of the semiconductor substrate are removed by the frictional force of the polishing pad and the chemical action of the buffing composition.
• a known buffing composition can be appropriately used depending on the type of semiconductor substrate and the type and amount of impurities to be removed.
• Components contained in the buffing composition include, for example, a water-soluble polymer such as polyvinyl alcohol, and water and an acid such as nitric acid as a dispersion medium.
• a buffing process it is preferable to perform a buffing process on a semiconductor substrate using the said process liquid as a buffing composition.
• the polishing apparatus, polishing conditions, and the like used in the buffing process can be appropriately selected from known apparatuses and conditions according to the type of the semiconductor substrate, the object to be removed, and the like.
• Buffing treatments include, for example, the treatments described in paragraphs [0085] to [0088] of WO2017/169539, the contents of which are incorporated herein.
• a cleaning method using a treatment liquid As a cleaning method using a treatment liquid, a method for cleaning a semiconductor substrate is preferable.
• a method for cleaning the semiconductor substrate is not particularly limited as long as it includes a cleaning step of cleaning the semiconductor substrate using the treatment liquid.
• the semiconductor substrate a semiconductor substrate subjected to CMP processing is preferable. It is also preferable that the cleaning method of the semiconductor substrate includes a step of applying the diluted treatment liquid obtained in the dilution step to the semiconductor substrate subjected to the CMP treatment for cleaning.
• a cleaning process for cleaning a semiconductor substrate using a treatment liquid for example, there is a known method performed on a semiconductor substrate that has been subjected to CMP processing. Specifically, there are scrub cleaning in which a cleaning member such as a brush is brought into physical contact with the surface of the semiconductor substrate while supplying the processing liquid to the semiconductor substrate to remove residues, etc., and immersion cleaning in which the semiconductor substrate is immersed in the processing liquid. Immersion-type cleaning, such as a spinning (dripping) method in which a processing liquid is dropped while a semiconductor substrate is rotated and a spraying method in which a processing liquid is sprayed, can further reduce impurities remaining on the surface of the semiconductor substrate. It is preferable to apply ultrasonic treatment to the treatment liquid in which the semiconductor substrate is immersed.
• the washing step may be performed once or twice or more. When washing two or more times, the same method may be repeated, or different methods may be combined.
• a method for cleaning a semiconductor substrate may be either a single-wafer method or a batch method.
• the single-wafer method is a method for processing semiconductor substrates one by one
• the batch method is a method for simultaneously processing a plurality of semiconductor substrates.
• the temperature of the processing liquid used for cleaning the semiconductor substrate is not particularly limited.
• the temperature of the treatment liquid is, for example, room temperature (25° C.), preferably 10 to 60° C., more preferably 15 to 50° C., from the viewpoint of improving cleaning performance and suppressing damage to members.
• the pH of the treatment liquid and the pH of the diluted treatment liquid are each the preferred embodiment of the pH described above.
• the cleaning time in cleaning the semiconductor substrate can be appropriately changed according to the type and content of the components contained in the processing liquid.
• the washing time is preferably 10 to 120 seconds, more preferably 20 to 90 seconds, even more preferably 30 to 60 seconds.
• the supply amount (supply rate) of the processing liquid in the semiconductor substrate cleaning process is preferably 50 to 5000 mL/min, more preferably 500 to 2000 mL/min.
• a mechanical stirring method may be used to further improve the cleaning performance of the processing liquid.
• mechanical stirring methods include a method of circulating the processing liquid over the semiconductor substrate, a method of flowing or spraying the processing liquid over the semiconductor substrate, and a method of stirring the processing liquid with ultrasonic waves or megasonics. .
• a rinsing step of cleaning the semiconductor substrate by rinsing it with a solvent may be performed.
• the rinsing step is preferably performed continuously after the cleaning step of the semiconductor substrate, and is a step of rinsing with a rinsing liquid for 5 to 300 seconds.
• the rinsing step may be performed using the mechanical agitation method described above.
• rinse liquids examples include water (preferably deionized water), methanol, ethanol, isopropyl alcohol, N-methylpyrrolidinone, ⁇ -butyrolactone, dimethylsulfoxide, ethyl lactate and propylene glycol monomethyl ether acetate.
• an aqueous rinse with a pH greater than 8.0 eg, diluted aqueous ammonium hydroxide, etc.
• a method of bringing the rinse solvent into contact with the semiconductor substrate for example, there is a method of bringing the above treatment liquid into contact with the semiconductor substrate.
• a drying step for drying the semiconductor substrate may be performed after the rinsing step.
• Drying methods include, for example, a spin drying method, a method of flowing a dry gas over the semiconductor substrate, a method of heating the substrate by heating means such as a hot plate and an infrared lamp, a Marangoni drying method, a Rotagoni drying method, IPA (isopropyl alcohol) drying method, and a combination thereof.
• the pH of the treatment liquid in Examples and Comparative Examples was measured at 25° C. using a pH meter (F-74, manufactured by Horiba Ltd.) in accordance with JIS Z8802-1984.
• the pKa of the acid group and the pKa of the basic group of the specific compound are the values in water (temperature 25 ° C.) calculated using Calculator Plugins (manufactured by Fujitsu), and the pKa of the basic group is the base is the value of the conjugate acid of the sexual group.
• the handling of containers, preparation of processing liquids, filling, storage, and analytical measurements were all carried out in a clean room that satisfies ISO class 2 or less.
• Antibacterial agent ⁇ Sorbic acid ⁇ methylchloroisothiazolinone ⁇ methylisothiazolinone ⁇ benzalkonium chloride ⁇ benzethonium chloride ⁇ domiphen bromide ⁇ salicylic acid ⁇ benzoic acid ⁇ phenoxyethanol ⁇ 1,2-pentanediol ⁇ 1,2-hexanediol ⁇ cresol ⁇ Chlorothymol/Dichloroxylenol/Hexachlorophene
• ⁇ THEMAH Tris (2-hydroxyethyl) methylammonium hydroxide
• ⁇ Aron A-10SL Polyacrylic acid (Mw 6,000), manufactured by Toagosei Co., Ltd.
• ⁇ Non-Pole PWA-50W Polymaleic acid (Mw 2,000), NOF Corporation Made by ethylene diamine
• pH adjuster Potassium hydroxide and/or sulfuric acid were used as pH adjusters as needed.
• the treatment liquid of Example 1 was prepared by the following procedure. To ultrapure water, add L-arginine, tris(hydroxymethyl)aminomethane, sorbic acid, citric acid, and a pH adjuster in the amounts shown in the table below for the finally obtained treatment solution, and stir thoroughly. Thus, the treatment liquid of Example 1 was obtained.
• the treatment liquids other than those of Example 1 were each produced according to the production method of Example 1.
• the content of the pH adjuster was 2% by mass or less with respect to the total mass of the treatment liquid in any of the treatment liquids.
• a defect detector was used to detect the number of defects on the polished surface of the obtained wafer, and each defect was observed with a SEM (scanning electron microscope) to classify the defects. If necessary, the constituent elements were analyzed by EDAX (energy dispersive X-ray analyzer) to identify the components. Based on this, the number of defects based on the residue was obtained, and the washability was evaluated according to the following evaluation criteria (Evaluation A is the most excellent washability). In addition, the washability was evaluated in the same procedure as above, except that each treatment liquid was changed to each diluted treatment liquid.
• ⁇ Polishing liquid 1> Examples 1 to 75, Comparative Examples 1 to 3, Examples 80 to 81 ⁇ Malonic acid: 0.30% by mass ⁇ Iron nitrate: 0.02% by mass ⁇ Hydrogen peroxide: 2.5% by mass ⁇ PL-5 (non-modified colloidal silica, manufactured by Fuso Chemical Industry Co., Ltd.): 1.5% by mass ⁇ Water: rest
• W corrosion resistance was evaluated using each treatment liquid (treatment liquid before dilution). Wafers (12 inch diameter) were cut on the surface with W to prepare 2 cm square wafer coupons. The thickness of the W metal film was 100 nm. The wafer coupon was immersed in each treatment solution, and each metal film was stirred at room temperature at 250 rpm for 30 minutes. After 30 minutes, the film thickness of the W metal film that disappeared was measured, and the W corrosion rate per unit time was calculated. The W corrosion resistance of the treatment liquid was evaluated according to the following evaluation criteria. In addition, W corrosion resistance was evaluated in the same procedure as above, except that each treatment liquid was changed to each diluted treatment liquid.
• W corrosion rate is 0.3 ⁇ /min or less
• the “content (% by mass)” column indicates the content (% by mass) of each component with respect to the total mass of the treatment liquid (treatment liquid before dilution).
• “*1" in the “pH” column means that the above-described pH adjuster was added as necessary in such an amount that the pH of the finally obtained processing liquid was the value in the "pre-dilution pH” column.
• the “remainder” of “water” means the remaining ingredients that are not explicitly listed as ingredients of the treatment liquid in the table.
• the “A/B” column shows the mass ratio of the content of the specific compound to the content of the aminoalcohol (content of the specific compound/content of the aminoalcohol).
• the "A/C” column shows the mass ratio of the content of the specific compound to the content of the antibacterial agent (content of specific compound/content of antibacterial agent).
• the “B/C” column shows the mass ratio of the aminoalcohol content to the antibacterial agent content (content of aminoalcohol/content of antibacterial agent).
• the "pre-dilution pH” column indicates the pH of the treatment liquid before dilution.
• the “post-dilution pH” column indicates the pH of the diluted treatment liquid (200-fold diluted treatment liquid). Each of the above pH values indicates the pH at 25° C. of the treatment liquid or the diluted treatment liquid measured with a pH meter.
• the treatment liquid of the present invention provided desired effects. It was confirmed that the effects of the present invention are more excellent when the pH of the treatment liquid is 4.0 to 8.0 (Examples 1 to 9). It was confirmed that the effects of the present invention are more excellent when the specific compound contains at least one compound selected from the group consisting of arginine, histidine and lysine (Examples 5, 17 to 20). It was confirmed that the effects of the present invention are more excellent when the content of the specific compound is 0.2 to 70.0% by mass with respect to the total mass of the components excluding the solvent in the treatment liquid (implementation Examples 5, 10-16).
• the aminoalcohol comprises at least one compound selected from the group consisting of Tris, Bis-Tris, Bis-Tris-Propane, 2-amino-1,3-propanediol and 3-amino-1,2-propanediol
• the effect of the present invention is more excellent (Examples 5, 37-42). It was confirmed that the effects of the present invention are more excellent when the content of amino alcohol is 2.0 to 72.0% by mass with respect to the total mass of the components excluding the solvent in the treatment liquid (implementation Examples 5, 29-36).

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