WO2023074182A1 - 発光装置、レーザー加工システム、発光装置の製造方法、及び、レーザー加工システムの製造方法 - Google Patents

発光装置、レーザー加工システム、発光装置の製造方法、及び、レーザー加工システムの製造方法 Download PDF

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WO2023074182A1
WO2023074182A1 PCT/JP2022/034735 JP2022034735W WO2023074182A1 WO 2023074182 A1 WO2023074182 A1 WO 2023074182A1 JP 2022034735 W JP2022034735 W JP 2022034735W WO 2023074182 A1 WO2023074182 A1 WO 2023074182A1
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laser
laser diode
emitting device
light
light emitting
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English (en)
French (fr)
Japanese (ja)
Inventor
隆行 甲斐
啓 大野
弘治 大森
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Panasonic Holdings Corp
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Panasonic Holdings Corp
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Priority to JP2023519525A priority Critical patent/JPWO2023074182A1/ja
Publication of WO2023074182A1 publication Critical patent/WO2023074182A1/ja
Priority to US18/635,025 priority patent/US20240283222A1/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
    • H01S5/143—Littman-Metcalf configuration, e.g. laser - grating - mirror
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00—Simple or compound lenses
    • G02B3/02—Simple or compound lenses with non-spherical faces
    • G02B3/06—Simple or compound lenses with non-spherical faces with cylindrical or toric faces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02255—Out-coupling of light using beam deflecting elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0239—Combinations of electrical or optical elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4012—Beam combining, e.g. by the use of fibres, gratings, polarisers, prisms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4043—Edge-emitting structures with vertically stacked active layers
    • H01S5/405—Two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4062—Edge-emitting structures with an external cavity or using internal filters, e.g. Talbot filters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/18—Semiconductor lasers with special structural design for influencing the near- or far-field

Definitions

  • the present disclosure relates to a light-emitting device, a laser processing system, a method for manufacturing a light-emitting device, and a method for manufacturing a laser processing system.
  • Wavelength Beam Combining (WBC) technology for condensing laser light from a plurality of laser emission sources is known as a technology related to laser processing systems (Patent Documents 1 and 2). By applying the WBC technology, a high-output laser processing system can be realized.
  • WBC Wavelength Beam Combining
  • Laser processing systems are used for applications such as welding, cutting, drilling, and material processing.
  • a WBC laser processing system typically includes a laser diode in which a plurality of emitters that emit laser light are arranged one-dimensionally, an optical fiber that guides the laser light from the emitters, and an optical fiber that guides the laser light. It has an optical system that illuminates the laser beam onto the workpiece.
  • a laser diode in which a plurality of emitters that emit laser light are arranged one-dimensionally, an optical fiber that guides the laser light from the emitters, and an optical fiber that guides the laser light. It has an optical system that illuminates the laser beam onto the workpiece.
  • U.S. Pat. No. 6,200,000 discloses a laser diode bar suitable for such a laser processing system.
  • multiple laser beams emitted from multiple emitters are focused on a diffraction grating, guided into an optical fiber, and irradiated onto a workpiece by an optical system. In this way, the workpiece is processed with laser light.
  • a light-emitting device includes a first laser diode having a plurality of emitters for emitting first laser light; a second laser diode that has a plurality of emitters that emit a second laser beam and is different from the first laser diode; a first beam twister unit provided corresponding to the first laser diode; a second beam twister unit provided corresponding to the second laser diode and different from the first beam twister unit; Prepare.
  • a method for manufacturing a light-emitting device includes: arranging a first laser diode having a plurality of emitters for emitting the first laser light; arranging a second laser diode that has a plurality of emitters for emitting a second laser beam and is different from the first laser diode; positioning a first beam twister unit corresponding to the first laser diode; arranging a second beam twister unit different from the first beam twister unit corresponding to the second laser diode; Prepare.
  • FIG. 1 is a conceptual diagram of a conventional WBC laser processing system.
  • FIG. 2 is a schematic diagram showing a conventional light emitting device.
  • FIG. 3 is a schematic diagram showing a conventional light emitting device with the upper electrode and the beam twister unit removed.
  • FIG. 4 is a schematic diagram showing a conventional laser diode.
  • FIG. 5 is a schematic diagram showing a beam twister unit included in a conventional light emitting device.
  • FIG. 6 is a diagram showing the relationship between the deviation of laser light on the diffraction grating and the degree of warp of the laser diode.
  • FIG. 7 is a diagram for explaining deviation of laser light on a diffraction grating.
  • FIG. 8 is a conceptual diagram of a WBC laser processing system according to the first embodiment.
  • FIG. 8 is a conceptual diagram of a WBC laser processing system according to the first embodiment.
  • FIG. 9 is a schematic diagram showing the light emitting device according to the first embodiment.
  • FIG. 10 is a schematic diagram showing the light-emitting device without the upper electrode and the beam twister unit.
  • FIG. 11 is a schematic diagram showing a laser diode included in the light emitting device according to the first embodiment.
  • FIG. 12 is a schematic diagram when the light emitting device according to the first embodiment is viewed from the front.
  • FIG. 13 is a schematic diagram of the light emitting device according to the first embodiment when viewed from the side.
  • FIG. 14 is a diagram for explaining the orientation of the beam twister unit included in the light emitting device according to the first embodiment.
  • FIG. 15 is a flow chart showing manufacturing steps of the light emitting device according to the first embodiment.
  • FIG. 16 is a diagram showing the state of the light-emitting device during adjustment of the arrangement position of the beam twister unit.
  • FIG. 17 is a diagram showing the state of the light-emitting device during the fixing operation of the beam twister unit.
  • FIG. 18 is a diagram showing the state of the light-emitting device during the arrangement position adjustment of the other beam twister unit.
  • FIG. 19 is a diagram showing the state of the light emitting device during the fixing operation of the other beam twister unit.
  • FIG. 20 is a graph showing the intensity distribution of laser light on the diffraction grating of the laser processing system.
  • FIG. 21 is a schematic diagram showing a light-emitting device included in the laser processing system according to the second embodiment.
  • FIG. 22 is a schematic diagram showing the light-emitting device when the upper electrode and the beam twister unit are removed.
  • FIG. 23 is a schematic front view of the light emitting device excluding the upper electrode and the beam twister unit.
  • FIG. 24 is a schematic diagram of the light emitting device viewed from the front.
  • 25 is a diagram showing the vicinity of a light emitting device of a laser processing system according to Modification 1.
  • FIG. 26 is a diagram for explaining the positional relationship of each optical component in the laser processing system according to Modification 1.
  • FIG. FIG. 27 is a schematic diagram showing a light emitting device according to Modification 2, showing the light emitting device when the upper electrode and the beam twister unit are removed.
  • FIG. 1 is a conceptual diagram of a conventional WBC laser processing system 10.
  • FIG. FIG. 2 is a schematic diagram showing a conventional light emitting device 20.
  • FIG. 3 is a schematic diagram showing a conventional light emitting device 20 without an upper electrode 25 (described later) and a beam twister unit 26 (described later).
  • FIG. 4 is a schematic diagram showing the laser diode 24.
  • FIG. 5 is a schematic diagram showing the beam twister unit 26. As shown in FIG.
  • the WBC laser processing system 10 is a system that combines laser beams 1 of different wavelengths and emits the combined light as output light 3 .
  • the laser processing system 10 includes a light emitting device 20, a SAC (Slow Axis Collimation) lens 30, a diffraction grating 40, and a half mirror 70 for external resonance.
  • SAC Small Axis Collimation
  • a plurality of laser beams 1 emitted from the light emitting device 20 are adjusted by the SAC lens 30 and the like, and then focused on the diffraction grating 40 . Then, the laser processing system 10 resonates the laser light 1 between the external resonance half mirror 70 and the light emitting device 20 to cause laser oscillation, and irradiates the output light 3 toward the workpiece (not shown). do.
  • the light emitting device 20 includes a laser diode module (hereinafter referred to as "LD module”) 90, which is an emission source of the laser light 1, and a beam twister unit 26 (see FIG. 2).
  • LD module laser diode module
  • the light emitting device 20 includes a laser diode module (hereinafter referred to as "LD module") 90, which is an emission source of the laser light 1, and a beam twister unit 26 (see FIG. 2).
  • the LD module 90 includes a lower electrode 21, an insulating sheet 22, a submount 23, a laser diode 24, and an upper electrode 25, as shown in FIGS.
  • the insulating sheet 22 is arranged between the lower electrode 21 and the upper electrode 25 in order to electrically insulate the lower electrode 21 and the upper electrode 25 from each other.
  • a submount 23 is placed on the lower electrode 21 to control the temperature of the laser diode 24 .
  • This temperature control includes cooling the laser diode 24 whose temperature has risen due to heat generation when the laser light 1 is emitted.
  • a cooling system not shown, cools the laser diode 24 via the lower electrode 21 and submount 23 .
  • the laser diode 24 is a semiconductor element that emits a plurality of laser beams 1 and is arranged on the submount 23 . Also, as shown in FIG. 4, the laser diode 24 includes a laser emitting layer 81, a p-side electrode 82 and an n-side electrode 83. As shown in FIG.
  • a plurality of emitters 80 for emitting the laser light 1 are formed in the laser emission layer 81.
  • the laser emission layer 81 has 48 emitters 80 formed at a pitch of several hundred ⁇ m.
  • the p-side electrode 82 and the n-side electrode 83 are electrodes in the device that are electrically connected to the lower electrode 21 and the upper electrode 25, respectively.
  • a plurality of p-side electrodes 82 are provided corresponding to each emitter 80 .
  • the laser diode 24 is arranged on the submount 23 so that the n-side electrode 83 faces the lower electrode 21 side.
  • the side on which the p-side electrode of the laser diode 24 is located is called the "p-side”
  • the side on which the n-side electrode is located is called the "n-side”.
  • the lower electrode 21 and the upper electrode 25 are block-shaped electrodes that electrically connect the p-side and n-side of the laser diode 24 to an external power source, respectively.
  • the plurality of emitters 80 emit light, and the laser light 1 is emitted from each emitter 80 .
  • the beam twister unit 26 is arranged on the laser emission surface side of the laser diode 24 (see FIG. 2).
  • the beam twister unit 26 collimates the plurality of laser beams 1 emitted from the laser diode 24 in the fast direction, and rotates and emits the plurality of laser beams 1 .
  • rotating the laser beam 1 means rotating the cross-sectional shape in a plane perpendicular to the propagation direction of the laser beam 1 .
  • the beam twister unit 26 includes a FAC (Fact Axis Collimation) lens 27, a beam twister lens 28, and a holding block 29.
  • FAC Fract Axis Collimation
  • the FAC lens 27 is a lens that collimates the laser light 1 emitted from the emitter 80 in the fast direction and adjusts the spread angle in the fast direction. are placed in Each laser beam 1 is collimated in the fast direction by passing through the FAC lens 27, and the beam shape changes.
  • the beam twister lens 28 has a plurality of cylindrical lenses. More specifically, on the incident side of the laser beam 1 in the beam twister lens 28, a plurality of cylindrical lenses are arranged so as to correspond to the plurality of emitters 80, respectively. A plurality of cylindrical lenses are arranged so as to correspond to each emitter 80 . These cylindrical lenses are arranged at an angle of 45 degrees with respect to the fast axis.
  • the beam twister lens 28 is aligned so that the optical axes of the multiple cylindrical lenses coincide with the emission axes of the multiple emitters 80 of the laser diode 24 .
  • a plurality of laser beams 1 that have passed through the FAC lens 27 are rotated by passing through the beam twister lens 28 .
  • the fast axis and slow axis of the laser light 1 emitted from the beam twister lens 28 are switched with respect to the fast axis and slow axis of the laser light 1 before entering the beam twister lens 28 .
  • the holding block 29 is a member that holds the FAC lens 27 and the beam twister lens 28 and is adhesively fixed to the upper electrode 25 . Thereby, the positional relationship between the FAC lens 27 and the beam twister lens 28 and the emitter 80 of the laser diode 24 is fixed.
  • the SAC lens 30 is a lens that converges the laser light 1 transmitted through the beam twister unit 26 in the slow direction and adjusts the spread angle in the slow direction.
  • the laser beam 1 is collimated in the slow direction by passing through the SAC lens 30, and the beam shape changes.
  • a plurality of laser beams 1 emitted from the SAC lens 30 are focused on the diffraction grating 40 .
  • the diffraction grating 40 and the light emitting device 20 are arranged so that the emission angle from the diffraction grating 40 is constant and corresponds to the lock wavelength of the light emitting device 20. are diffracted at different angles according to , and emitted as combined light 2 .
  • the combined light 2 emitted from the diffraction grating 40 is incident on the external resonance half mirror 70 after passing through the convex lens 50 and the concave lens 60 .
  • a portion of the combined light 2 is vertically reflected by the external resonance half mirror 70 and returns to each emitter 80 of the laser diode 24 to cause laser oscillation.
  • the output light 3 obtained by synthesizing the laser light 1 of different wavelengths is emitted from the external resonance half mirror 70 .
  • the beam intensity of the laser processing system 10 can be increased.
  • the laser light emitting points in the emitter 80 (hereinafter referred to as "laser emitting points") are arranged at the same height. However, if the laser diode 24 is warped, the heights of the plurality of laser emission points are shifted.
  • the magnitude of the warp of the laser diode 24 is, for example, the difference between the height of the light emitting point located closest to the p side and the height of the light emitting point located closest to the n side among the laser emitting points of the laser diode 24. expressed.
  • the positions of some laser emission points will deviate from the ideal position (that is, height) with respect to the FAC lens 27 .
  • the greater the deviation of the optical axis of the laser beam 1 from the optical axis of the FAC lens 27 (hereinafter referred to as “deviation on the FAC lens"), the more diffraction occurs in proportion to the distance from the laser diode 24 to the diffraction grating 40.
  • the deviation of the optical axis of the laser beam 1 from the focal point of the grating 40 (hereinafter referred to as "deviation on the diffraction grating") increases.
  • FIG. 6 is a diagram showing the relationship between the deviation on the diffraction grating and the degree of warp of the laser diode 24 under predetermined conditions.
  • the predetermined conditions are that the distance from the emitter 80 to the FAC lens 27 is approximately 30 ⁇ m, and the distance from the FAC lens 27 to the diffraction grating 40 is 1000 mm.
  • the deviation on the FAC lens is 1 ⁇ m. becomes.
  • the deviation on the diffraction grating is about 8 mm.
  • the size of the FAC lens 27 is very small, about several hundred ⁇ m. Therefore, the focal length of the FAC lens 27 is small. Therefore, even a slight deviation on the FAC lens causes a large deviation on the diffraction grating.
  • the laser diode 24 will have a maximum warp of about 2 ⁇ m.
  • the heights of the multiple laser emission points vary according to the warp.
  • the optical axis of the laser light 1 emitted from each emitter 80 projected onto the diffraction grating 40 shifts in the fast direction.
  • FIG. 7 is a diagram for explaining the displacement of the laser light 1 on the diffraction grating 40.
  • FIG. A solid line indicates the beam spot BS1 of the laser light 1 when the optical axis of the FAC lens 27 is aligned with the optical axis of the laser light 1 for each emitter 80.
  • FIG. The dashed line indicates the beam spot BS2 of the laser beam 1 when the warp of the laser diode 24 is relatively large and the distance between the optical axis of the laser beam 1 and the optical axis of the FAC lens 27 is large.
  • FIG. 7 shows that beam spot BS2 is shifted in the fast direction with respect to beam spot BS1.
  • the optical axis of the laser beam 1 deviates in the fast direction, the overlapping of the laser beams 1 on the external resonance half mirror 70 deteriorates, and the beam quality of the output light 3 deteriorates.
  • the laser diode 24 is cut into chips from a semiconductor wafer.
  • the number of laser diodes 24 that can be cut out from one semiconductor wafer (hereinafter referred to as the "capable number") may be extremely small.
  • the dimension of the laser diode 24 in the direction in which the emitters 80 are arranged increases. . In this case, there is a possibility that the number of pieces obtained may decrease.
  • the length of the laser diode will increase, making it more likely to warp.
  • the emitters are no longer arranged one-dimensionally and are no longer positioned at the same height. In this case, the laser beam is no longer focused at the desired position, and the beam quality of the laser processing system deteriorates.
  • the present inventor invented the light-emitting device, the laser processing system, the method for manufacturing the light-emitting device, and the method for manufacturing the laser processing system of the present disclosure.
  • beam quality can be improved.
  • the yield rate of the laser diode 24 can be improved. Furthermore, according to one embodiment of the light-emitting device, the laser processing system, the method of manufacturing the light-emitting device, and the method of manufacturing the laser processing system of the present disclosure, a semiconductor wafer can be effectively used.
  • An object of the present disclosure is to provide a light-emitting device, a laser processing system, a method for manufacturing a light-emitting device, and a method for manufacturing a laser processing system that can improve beam quality.
  • each figure is a schematic diagram and is not strictly illustrated. Therefore, the scales and the like in each drawing are not necessarily the same. In each figure, substantially the same configurations are given the same reference numerals, and duplicate descriptions are omitted or simplified.
  • FIG. 8 is a conceptual diagram of a WBC laser processing system 100 according to this embodiment.
  • FIG. 9 is a schematic diagram showing the light emitting device 120.
  • FIG. 10 is a schematic diagram showing the light emitting device 120 when the upper electrode 125 (described later) and beam twister units 126A and 126B (described later) are removed.
  • FIG. 11 is a schematic diagram showing laser diodes 124A and 124B.
  • FIG. 12 is a schematic diagram of the light emitting device 120 viewed from the front.
  • FIG. 13 is a schematic diagram of the light emitting device 120 viewed from the side.
  • FIG. 14 is a diagram for explaining the orientation of the beam twister units 126A and 126B.
  • the laser processing system 100 includes a light emitting device 120, a SAC lens 130, a diffraction grating 140, and an external resonance half mirror 170. They are arranged in the order of the light emitting device 120, the SAC lens 130, the diffraction grating 140, and the external resonance half mirror 170 from the upstream side in the traveling direction of the laser light.
  • a convex lens 150 and a concave lens 160 may be arranged between the diffraction grating 140 and the external resonance half mirror 170 .
  • the emission principle of the output light 104 of the laser processing system 100 is the same as the emission principle of the output light 3 of the conventional laser processing system 10 described above.
  • the difference between the laser processing system 100 according to this embodiment and the conventional laser processing system 10 lies in the structure of the light emitting device.
  • the light emitting device 120 includes an LD module 190 that emits laser beams 101 and 102, a first beam twister unit 126A, and a second beam twister unit 126B.
  • the LD module 190 includes a lower electrode 121, an insulating sheet 122, a first submount 123A, a second submount 123B, a first laser diode 124A, a second laser diode 124A, and a second submount 123B, as shown in FIGS. , and an upper electrode 125 .
  • the insulating sheet 122 is arranged between the lower electrode 121 and the upper electrode 125 in order to electrically insulate the lower electrode 121 and the upper electrode 125 from each other.
  • the first submount 123A and the second submount 123B are members different from each other, and are provided corresponding to the first laser diode 124A and the second laser diode 124B, respectively.
  • Submounts 123A, 123B like submount 23 described above, are positioned on lower electrode 121 to control the temperature of laser diodes 124A, 124B, respectively.
  • the second submount 123B is independent and separated from the first submount 123A.
  • the first laser diode 124A and the second laser diode 124B are semiconductor elements.
  • the second laser diode 124B is a separate element from the first laser diode 124A having the same structure as the first laser diode 124A.
  • a first laser diode 124A and a second laser diode 124B are disposed on a first submount 123A and a second submount 123B, respectively.
  • the configuration of the first laser diode 124A will be described below. Since the configuration of the second laser diode 124B is the same as the configuration of the first laser diode 124A, its description is omitted.
  • the first laser diode 124A comprises a laser emission layer 181, a p-side electrode 182 and an n-side electrode 183, as shown in FIG.
  • the laser emission layer 181 is a layer that emits the first laser light 101 .
  • a plurality of emitters 180 for emitting the first laser light 101 are formed in the laser emission layer 181 at a pitch of several hundred ⁇ m, for example.
  • the number of emitters 180 formed in the laser emitting layer 181 is less than the number of emitters 80 formed in a conventional laser diode 24 used in the laser processing system 10 having a laser power equivalent to that of the laser processing system 100, such as , 35 lines. Therefore, the dimension of the first laser diode 124A is shorter than the dimension of the conventional laser diode 24 in the emitter arrangement direction.
  • the number of emitters 180 formed in the laser emitting layer 181 should be two or more. For example, two or more emitters 180 may be formed at a pitch of several hundred ⁇ m.
  • the p-side electrode 182 and the n-side electrode 183 are electrodes in the device electrically connected to the lower electrode 121 and the upper electrode 125, respectively, and are the same as the p-side electrode 82 and the n-side electrode 83 described above. .
  • the first submount 123A and the second laser diode 124B are mounted so that their laser emission surfaces are flush with each other and the n-side electrode 183 faces the lower electrode 121 side. are placed on the submounts 123B of the .
  • the first laser diode 124A and the second laser diode 124B may be arranged such that the p-side electrode 182 faces the lower electrode 121 side.
  • the first laser diode 124A and the second laser diode 124B are arranged such that the n-side electrode 183 faces the lower electrode 121 as an example.
  • the lower electrode 121 and the upper electrode 125 are block-shaped electrodes that electrically connect the p-side and n-side of the laser diodes 124A and 125B to an external power supply, respectively.
  • the first laser diode 124A, the first submount 123A and the lower electrode 121 can be conducted without current loss.
  • the second laser diode 124B, the second submount 123B and the lower electrode 121 are conductive without current loss.
  • the first laser diode 124A and the second laser diode 124B have the same polarity when they are electrically connected. Therefore, when a current is passed between the lower electrode 121 and the upper electrode 125, the current flows in parallel through the laser diodes 124A and 125B.
  • the current flows in parallel to all the emitters 180 of the laser diodes 124A and 124B. Then, when a current exceeding a certain value flows through the emitter 180 , the laser beams 101 and 102 are emitted and emitted from the emitter 180 .
  • the warp of the first laser diode 124A and the second laser diode 124B is within 3.0 ⁇ m, preferably within 2.0 ⁇ m. This warpage will be described later in detail.
  • the first beam twister unit 126A and the second beam twister unit 126B are components different from each other, and are provided corresponding to the first laser diode 124A and the second laser diode 124B, respectively.
  • the second beam twister unit 126B is independent and separated from the first beam twister unit 126A.
  • the first beam twister unit 126A comprises an FAC lens 127, a beam twister lens 128 and a holding block 129.
  • the FAC lens 127 is a lens that collimates the laser beam 101 in the fast direction and adjusts the spread angle in the fast direction. are arranged to
  • a lens with a focal length of 30 ⁇ m or more and 50 ⁇ m or less is used as the FAC lens 127 . This focal length will be described later in detail.
  • the beam twister lens 128 has a plurality of cylindrical lenses 128R, like the beam twister lens 28 described above.
  • a plurality of cylindrical lenses 128R are arranged so as to correspond to the plurality of emitters 180 on the incident side of the laser beams 101 and 102 in the beam twister lens 128, and a plurality of emitters are arranged on the emitting side of the laser beams 101 and 102.
  • a plurality of cylindrical lenses 128R are arranged so as to correspond to each 180 (see FIG. 12). These cylindrical lenses 128R are arranged at an angle of 45 degrees with respect to the fast axis.
  • a holding block 129 is a member that holds the FAC lens 127 and the beam twister lens 128 and is fixed to the upper electrode 125 with an adhesive 110 . This fixes the positional relationship between the FAC lens 127, the beam twister lens 128, and the emitter 180 of the laser diode 124A.
  • the first beam twister unit 126A is arranged so that one cylindrical lens 128R is positioned for each emitter 180. Specifically, the optical axis CL1 of each emitter 180 of the first laser diode 124A and the optical axis CL2 of each cylindrical lens 128R are aligned.
  • the configuration of the second beam twister unit 126B is the same as that of the first beam twister unit 126A. Also, the positional relationship between the second beam twister unit 126B and the second laser diode 124B is the same as the positional relationship between the first beam twister unit 126A and the first laser diode 124A. Therefore, detailed description thereof will be omitted.
  • Beam twister units 126A and 126B are arranged such that the plurality of first laser beams 101 emitted from beam twister unit 126A and the plurality of second laser beams 102 emitted from beam twister unit 126B are arranged in the same direction on diffraction grating 140. positioned to face the position.
  • the beam twister units 126A, 126B are arranged such that the laser exit planes of the beam twister units 126A, 126B are non-parallel to each other, as shown in FIG.
  • ⁇ in FIG. 14 is the angle formed by the laser emission surface of the second beam twister unit 126B with respect to the laser emission surface of the first beam twister unit 126A.
  • the laser diodes 124A and 124B are arranged so that their laser emission surfaces are flush with each other.
  • the emission directions of the first laser beam 101 and the second laser beam 102 from the beam twister units 126A and 126B can be adjusted.
  • Warping of the first laser diode 124A and the second laser diode 124B is caused by, for example, stress caused by the layer structure of the quantum well structure in the laser emitting layer 181 .
  • the dimension of the laser diodes 124A and 124B in the arrangement direction of the emitters 180 is 10 mm, and the laser diodes 124A and 124B have a U-shaped warp (so-called smile) of 2 ⁇ m, the radius of curvature of the warp is , 6253 mm.
  • the warp is 1.1 ⁇ m. Therefore, the maximum deviation between the optical axis of the first laser beam 101 and the second laser beam 102 and the optical axis (central axis) of the FAC lens 127 is 0.55 ⁇ m.
  • the warpage includes an S-shape with one peak and one valley, an M-shape with two peaks and one valley, and one peak and two valleys.
  • the laser diode in the light emitting device has a split structure, and the dimension in the arrangement direction is shorter than that of a conventional laser diode with a single structure. We are trying to improve.
  • the laser diode 124A is a blue direct laser diode as an example.
  • the laser light 101 emitted from the laser diode 124A is coherent light, but after being emitted from the emitter 180, the beam shape of the laser light 101 expands until it reaches the diffraction grating 140.
  • the beam diameter of the laser light 101 on the diffraction grating 140 is approximately 30 mm.
  • the beam diameter will be explained.
  • the laser diode includes one emitter (so-called single-mode laser diode)
  • the light intensity distribution of the laser light emitted from the laser diode is a Gaussian distribution.
  • the beam diameter means the diameter of the beam in the range where the intensity ratio from the peak of the intensity distribution is 13.5% or more (that is, the range of ⁇ from the peak position when the standard deviation of the intensity distribution is ⁇ ). do.
  • the M2 parameter of the laser light emitted from the single-mode laser diode is 1 on the diffraction grating.
  • the M2 parameter of combined light of multiple laser beams emitted from a laser diode including multiple emitters is greater than one. For example, if the laser diode has a warp of 2 ⁇ m, the M2 parameter is 2 or more.
  • the lens curvature of the FAC lens 127 is selected according to the distance between the emitters 180 of the laser diodes 124A, 124B.
  • the beam diameters of the laser beams 101 and 102 emitted from the emitter 180 are expanded by the time they enter each FAC lens 127 .
  • the divergence angle in the fast direction is 50°
  • the laser diode When adopting the FAC lens 127 with a focal length of 30 ⁇ m or more and 50 ⁇ m or less, in order to make the M parameter 4 or less on the diffraction grating 140 arranged at a position 1000 mm away from the laser diodes 124A and 124B, the laser diode
  • the warpage of 124A and 124B should be 3.0 ⁇ m or less, preferably 2.0 ⁇ m or less.
  • the warp can be easily suppressed to 3.0 ⁇ m or less.
  • FIG. 15 is a flow chart showing the manufacturing process of the light emitting device 120 according to this embodiment.
  • the method for manufacturing the light emitting device 120 includes (1) a step S100 for cutting out the laser diodes 124A and 124B from the semiconductor wafer, (2) a step S200 for assembling the LD module 190, and (3) a step S300 for arranging the beam twister units 126A and 126B. I have.
  • step S100 laser diodes 124A and 124B are cut from a semiconductor wafer.
  • the dimension in the arrangement direction of the emitters 180 of the laser diodes 124A and 124B (hereinafter sometimes simply referred to as "the dimension in the arrangement direction") is set to the predetermined dimension X0.
  • the predetermined dimension X0 is such that Y ⁇ X0 ⁇ where Y is the quotient obtained by dividing the dimension of the portion to be cut out of the semiconductor wafer (hereinafter referred to as “cutout target portion”) by an integer N of 4 or more. It satisfies the relational expression of 0.8Y.
  • the part to be cut out is the part of the semiconductor wafer excluding the part that is held by an arm or the like when the semiconductor wafer is transported during the process and cannot be cut out.
  • a portion that cannot be cut out is, for example, a portion that is about 2 mm inward from the peripheral edge of the semiconductor wafer.
  • the laser diodes 124A and 124B are blue direct diodes
  • a semiconductor wafer with a diameter of 2 inches (50 mm in diameter) is used.
  • the dimension of the cut-out target portion is 46 mm (50 mm-2 mm ⁇ 2).
  • the predetermined dimension X0 is 11.5 mm (46 mm/4) ⁇ X0 ⁇ 9.2 mm (46 mm/4 ⁇ 0.8).
  • X0 is 9.2 mm (46 mm/5) ⁇ X0 ⁇ 7.3 mm (46 mm/5 ⁇ 0.8) (rounded down to the second decimal place).
  • the assembly step S200 of the LD module 190 includes a step S201 of bonding the laser diodes 124A and 124B onto the submounts 123A and 123B, respectively, a step S202 of disposing the laser diodes 124A and 124B on the lower electrode 121, and an upper electrode 125. and a step S203 of adhering the .
  • the laser diodes 124A, 124B are arranged on the submounts 123A, 123B so that the n side faces the submounts 123A, 123B, and are bonded by soldering (step S201).
  • the laser diodes 124A, 124B are placed and bonded on the lower electrode 121 so that the submounts 123A, 123B are in contact with the lower electrode 121 (step S202).
  • the insulating sheet 122 is adhered onto the lower electrode 121, electrical connections such as bumps are formed on the laser diodes 124A and 124B, and the upper electrode 125 is adhered onto the electrical connections (step S203). .
  • FIG. 16 is a diagram showing the state of the light emitting device 120 during adjustment of the arrangement position of the first beam twister unit 126A.
  • FIG. 17 shows the state of the light emitting device 120 during the fixing operation of the first beam twister unit 126A.
  • FIG. 18 is a diagram showing the state of the light emitting device 120 during adjustment of the arrangement position of the second beam twister unit 126B.
  • FIG. 19 is a diagram showing the state of the light emitting device 120 during the fixing operation of the second beam twister unit 126B.
  • step S300 comprises steps S1-S3.
  • step S1 the LD module 190 is placed (step S2).
  • Step S2 includes steps S21 to S25.
  • the first beam twister unit 126A is held by a holder (not shown) and arranged at a predetermined position (step S21).
  • the predetermined position means the laser emitting end side of the first laser diode 124A.
  • a current is passed between the upper electrode 125 and the lower electrode 121 to cause the emitter 180 of the first laser diode 124A to emit light and emit the first laser light 101.
  • the second laser beam 102 is also emitted from the second laser diode 124B. be blocked.
  • step S23 the arrangement position of the first beam twister unit 126A is adjusted.
  • the step S23 will be described in detail below.
  • a measurement camera (not shown) having a beam quality confirmation lens is arranged at the irradiation destination of the first laser beam 101 .
  • the first beam twister unit 126A is moved in the optical axis direction of the first laser beam 101 and in a direction perpendicular to the optical axis direction, and the position of the first beam twister unit 126A is changed as follows (A). Adjust to a position that satisfies ⁇ (C).
  • A The distance from the emitter 180 to the plane of incidence of the FAC lens 127 matches the focal length of the FAC lens 127;
  • B When the combined light based on the plurality of first laser beams 101 is viewed through the beam quality confirmation lens of the measurement camera, the combined light has the smallest beam shape.
  • C A plurality of first laser beams 101 are focused at predetermined positions.
  • the simulated external resonance optical system is a pre-measurement system that imitates the laser processing system 100, and includes optics corresponding to the SAC lens 130, the diffraction grating 140, the convex lens 150, the concave lens 160, and the external resonance half mirror 170. have parts.
  • the measurement camera described above is arranged at the irradiation destination of the output light 104 emitted from the optical component corresponding to the external resonance half mirror 170 . Then, the arrangement position of the first beam twister unit 126A is adjusted so that the intensity of the output light 104 is maximized and the beam shape of the output light 104 is minimized on the measurement camera.
  • step S24 the current between the upper electrode 125 and the lower electrode 121 is interrupted to stop the light emission of the first laser diode 124A.
  • step S25 the adhesive 110 is applied to the holding block 129 and is cured by irradiating the adhesive 110 with the ultraviolet rays 106 (see FIG. 17).
  • the arrangement position of the first beam twister unit 126A may be readjusted by performing steps S22 and S23 again.
  • step S3 After the arrangement position of the first beam twister unit 126A is adjusted and fixed, the arrangement operation of the second beam twister unit 126B is performed (step S3).
  • Step S3 includes steps S31 to S35 corresponding to steps S21 to S25, respectively. (see FIGS. 18 and 19).
  • the light-emitting device 120 is completed through steps S100 to S300.
  • the manufacturing method of the laser processing system 100 includes a light emitting device 120 placement step S400 and an optical component placement step S500.
  • the light emitting device 120 is arranged (step S400).
  • optical components such as the SAC lens 130, the diffraction grating 140, the convex lens 150, the concave lens 160, and the external resonance half mirror 170 are arranged at appropriate positions (step S500).
  • the laser processing system 100 is completed through the above steps S400 and S500.
  • the laser processing system 100 includes one SAC lens 130. Therefore, the position of the SAC lens 130 is changed with respect to each of the first beam twister unit 126A and the second beam twister unit 126B. No separate adjustment is required.
  • the light emitting device 120 has a first laser diode 124A having a plurality of emitters 180 for emitting the first laser beam 101, and a plurality of emitters 180 for emitting the second laser beam 102, A second laser diode 124B different from the first laser diode 124A, a first beam twister unit 126A provided corresponding to the first laser diode 124A, and a second beam twister unit 126A provided corresponding to the second laser diode 124B. and a second beam twister unit 126B different from the first beam twister unit 126A.
  • the method for manufacturing the light emitting device 120 comprises a step of arranging the first laser diode 124A having a plurality of emitters 180 for emitting the first laser beam 101 (step S202); arranging a second laser diode 124B that has a plurality of emitting emitters 180 and is different from the first laser diode 124A (step S202); and a step of arranging a second beam twister unit 126B different from the first beam twister unit 126A in correspondence with the second laser diode 124B (step S3). , provided.
  • the light emitting device 120 a structure in which a plurality of laser diodes having relatively short dimensions in the array direction of the emitters 180 are arranged can be adopted instead of laser diodes having relatively long dimensions in the array direction. Therefore, the laser diodes 124A and 124B of the light emitting device 120 can be less warped, so that when the light emitting device 120 is employed in the laser processing system 100, the plurality of laser beams 101 and 102 can be easily focused. As a result, the beam quality of the output light 3 of the laser processing system 100 can be improved.
  • the beam twister units 126A and 126B are arranged corresponding to the laser diodes 124A and 124B, respectively, the arrangement position and orientation of the beam twister unit can be adjusted for each laser diode. Therefore, it is possible to further improve the convergence of the laser beams 101 and 102 and improve the beam quality.
  • the light emitting device 120 a structure in which a plurality of laser diodes having relatively short dimensions in the arrangement direction are arranged can be adopted. of emitters 180 can be arranged. Therefore, the light output of the light emitting device 120 can be increased.
  • the light emitting device can be manufactured without increasing the warp of the laser diodes simply by increasing the number of laser diodes arranged in the light emitting device 20.
  • the number of emitters 180 placed in 120 can be increased.
  • the laser output value of the light emitting device 120 can be increased.
  • the number of emitters included in one laser diode is smaller than the number of emitters 80 included in the conventional laser diode 24. Therefore, the yield rate in manufacturing laser diodes can be increased.
  • FIG. 20 is a graph showing the intensity distribution of laser light on the diffraction grating of the laser processing system.
  • P1 is the intensity distribution when a light-emitting device having a single-mode laser diode is arranged in the laser processing system.
  • P2 is the intensity distribution of the combined light of the plurality of laser beams 1 when the light emitting device 20 having the conventional laser diode 24 is arranged in the laser processing system.
  • P3 is the intensity distribution of the combined light of the plurality of laser beams 101 and 102 when the light emitting device 120 having the laser diodes 124A and 124B of this embodiment is arranged in the laser processing system.
  • the warp was set so that the radius of curvature of the single mode laser diode, the conventional laser diode 24, and the laser diodes 124A and 124B was 6253 mm. Also, the average height of the laser emission point of each laser diode was matched with the height of the central axis of the FAC lens.
  • FIG. 20 shows that the intensity distribution P3 has a shape closer to the intensity distribution P1 than the intensity distribution P2. That is, it can be said that the use of the light emitting device 120 of the present embodiment has a higher convergence of laser light from the emitter and a higher beam quality of the laser processing system than the conventional light emitting device 20 .
  • the optical output value of the laser light 1 from each emitter 80 is 1.5 W
  • the optical output value of the laser diode 24 is 72 W (1.5 W x 48 lines).
  • each of the laser diodes 124A and 124B of the light emitting device 120 has 35 emitters. 180 can be arranged.
  • the optical output value of the laser beams 101 and 102 from each emitter 180 is 1.5 W
  • the optical output value of the light emitting device 120 is 105.0 W (1.5 W x 35 lines x 2).
  • the laser diode by adopting a split structure for the laser diode, it is possible to increase the number of emitters that can be arranged in one light-emitting device 120 while reducing the degree of warpage compared to the case of adopting a conventional integrated structure. , the light output of the light emitting device can be improved while improving the beam quality.
  • a laser diode having a relatively short dimension in the arrangement direction can be used as the laser diode, so that the yield rate of the laser diode can be improved.
  • the step of arranging the first beam twister unit 126A includes the steps of adjusting and fixing the arrangement position of the first beam twister unit 126A (steps S23, step S25), and the step of arranging the second beam twister unit 126B (step S3) adjusts the position of the second beam twister unit 126B after the first beam twister unit 126A is fixed. , and fixing steps (steps S33 and S35).
  • the first beam twister unit 126A and the second beam twister unit 126B are composed of a plurality of first laser beams 101 emitted from the first beam twister unit 126A and a plurality of laser beams 101 emitted from the second beam twister unit 126B.
  • a plurality of second laser beams 102 are arranged so as to head toward the same position.
  • the first beam twister unit 126A has an FAC lens 127 that adjusts the divergence angle of the plurality of first laser beams 101 in the fast direction
  • the second beam twister unit 126B has a plurality of first beam twister units 126B.
  • 2 has an FAC lens 127 for adjusting the spread angle of the fast direction of the laser light 102 .
  • the warp of the first laser diode 124A and the warp of the second laser diode 124B are both 3.0 ⁇ m or less
  • the focal lengths of the FAC lenses 127 of the beam twister units 126A and 126B are Both are 30 ⁇ m or more and 50 ⁇ m or less.
  • the dimensions in the arrangement direction of the laser diodes 124A and 124B can be made relatively short, accordingly, the magnitude of their warpage can be easily suppressed to 3.0 ⁇ m or less.
  • the focal lengths of the FAC lenses 127 of the beam twister units 126A and 126B are both 30 ⁇ m or more and 50 ⁇ m or less. Therefore, the laser beams 101 and 102 can be appropriately made incident on the beam twister lenses 128 of the beam twister units 126A and 126B, respectively.
  • the first laser diode 124A and the second laser diode 124B are arranged such that the dimension in the arrangement direction of the plurality of emitters 180 is the predetermined dimension X0.
  • a step (step S100) of cutting out the diode 124A and the second laser diode 124B from the semiconductor wafer is further included.
  • This predetermined dimension X0 satisfies the relational expression Y ⁇ X0 ⁇ 0.8Y, where Y is the quotient obtained by dividing the dimension of the portion to be cut out of the semiconductor wafer by an integer N of 4 or more. .
  • the number of laser diodes 124A and 124B that can be obtained changes depending on the setting of the dimensions in the arrangement direction of the laser diodes 124A and 124B with respect to the dimensions of the semiconductor wafer. Also, the number of wafers obtained varies depending on the gap between the exposure ranges of the stepper exposure used in the manufacturing process of semiconductor wafers.
  • the predetermined dimension X0 is set to Y ⁇ X0 ⁇ 0.8Y, it is possible to increase the number of semiconductor wafers that can be obtained while considering the gap between the exposure ranges of the stepper exposure. That is, it is possible to effectively utilize the semiconductor wafer by reducing the surplus portion of the semiconductor wafer as much as possible.
  • a laser processing system 100 includes a light emitting device 120 . Therefore, as described above, it is possible to improve the beam quality of the output light 104 of the laser processing system 100 and improve the light output of the output light 104 .
  • FIG. 21 is a schematic diagram showing a light emitting device 220 included in the laser processing system 200 according to the second embodiment.
  • FIG. 22 is a schematic diagram showing the light emitting device 220 without the upper electrode 125 and the beam twister units 126A and 126B.
  • FIG. 23 is a schematic front view of the light emitting device 220 excluding the upper electrode 125 and the beam twister units 126A and 126B.
  • FIG. 24 is a schematic diagram of the light emitting device 220 viewed from the front.
  • a laser processing system 200 includes a light emitting device 220 instead of the light emitting device 120 .
  • the light emitting device 220 as shown in FIG. 21, comprises an LD module 290, a first beam twister unit 126A and a second beam twister unit 126B.
  • the LD module 290 comprises a lower electrode 121, an insulating sheet 122, a first laser diode 124A and a second laser diode 124B.
  • the LD module 290 includes a first submount 223A and a second submount 223B instead of the first submount 123A and the second submount 123B.
  • the first submount 223A and the second submount 223B are members different from each other and arranged on the lower electrode 121 .
  • the thickness of the first submount 223A is different from the thickness of the second submount 223B, and it can be seen in FIGS. 23 and 24 that the first submount 223A is thicker than the second submount 223B. It is shown.
  • the first laser diode 124A is arranged on the first submount 223A so that the p side faces the lower electrode 121.
  • the second laser diode 124B is arranged on the second submount 223B so that the n side faces the lower electrode 121.
  • the lower electrode 121 is electrically connected to the p-side of the first laser diode 124A and the n-side of the second laser diode 124B.
  • the first submount 223A is thicker than the second submount 223B, and the laser emitting layer 181 of the first laser diode 124A and the laser emitting layer 181 of the second laser diode 124B are of the same height.
  • Each thickness is set so as to be In other words, when the first laser diode 124A and the second laser diode 124B are placed on the first submount 223A and the second submount 223B, respectively, the plurality of laser emissions of the first laser diode 124A The point and the plurality of laser emission points of the second laser diode 124B are at the same height.
  • the LD module 290 includes a first upper electrode 225A and a second upper electrode 225B instead of the upper electrode 125.
  • the first upper electrode 225A is electrically connected to the n side of the first laser diode 124A.
  • the second upper electrode 225B is electrically connected to the p-side of the second laser diode 124B and spaced apart from the first upper electrode 225A. Therefore, the first upper electrode 225A and the second upper electrode 225B are electrically insulated from each other.
  • the LD module 290 when a current is passed between the first upper electrode 225A and the second upper electrode 225B, the current flows through the second upper electrode 225B, the second laser diode 124B, the lower electrode 121, the first , the laser diode 124A and the upper electrode 225A. That is, the first laser diode 124A and the second laser diode 124B are connected in series.
  • the manufacturing method of the light-emitting device 120 according to the second embodiment includes the step S100 described above. Further, the method for manufacturing the light emitting device 220 includes step S600 (steps S601 to S603) in place of step S200 (steps S201 to S203), and step S700 in place of step S300.
  • step S600 will be described.
  • the p-side of the first laser diode 124A is glued to the first submount 223A, and the n-side of the second laser diode 124B is glued to the second submount 223B (Step S601).
  • the laser diodes 124A and 124B are arranged and adhered to the lower electrode 121 so that the submounts 223A and 223B are in contact with the lower electrode 121 (step S602).
  • the insulating sheet 122 is adhered onto the lower electrode 121, electrical connections such as bumps are formed on the laser diodes 124A and 124B, and further, the first laser diode 124A and the second laser diode 124B are formed. , the upper electrode 225A and the second upper electrode 225B are respectively adhered (step S603).
  • step S700 is the same as step S300 described above, except that a current is passed between the first upper electrode 225A and the second upper electrode 225B when the laser diodes 124A and 124B emit light.
  • the light emitting device 220 includes an upper electrode 225A, an upper electrode 225B spaced apart from the upper electrode 225A, and a lower electrode spaced apart from the upper electrode 225A and the upper electrode 225B. 121.
  • the upper electrode 225A is electrically connected to the n-side of the first laser diode 124A
  • the lower electrode 121 is connected to the p-side of the first laser diode 124A and the n-side of the second laser diode 124B.
  • the upper electrode 225B is electrically connected to the p-side of the second laser diode 124B.
  • the first laser diode 124A and the second laser diode 124B are connected in series.
  • the effect of connecting the first laser diode 124A and the second laser diode 124B in series will be described below by taking a laser processing system including ten light emitting devices as an example.
  • the current value and voltage value required to output laser light from the light emitting device 120 are , for example, 88A and 4.5V.
  • a power supply capable of outputting a current value of 88 A and a voltage value of 45 V (4.5 V ⁇ 10) is required.
  • the required current value is relatively small. For example, if the laser diodes 124A, 124B have 35 emitters 180, the required current value is 44A.
  • the laser processing system includes the light emitting device 220 according to the second embodiment, a current value of 44 A and a voltage value of 90 V (9.0 V x 10) are output in order to emit output light from the laser processing system.
  • a viable power source is required.
  • the power value required for the power source to output the laser beams 101 and 102 is the same, but the current value required for the power source is Since it is smaller, it becomes easier to build a power supply circuit in a laser processing system.
  • the first laser diode 124A is arranged so that the p side faces the lower electrode 121
  • the second laser diode 124B is arranged so that the n side faces the lower electrode 121.
  • the laser emitting layer 181 of the second laser diode 124B is arranged to be at the same height as the laser emitting layer 181 of the first laser diode 124A.
  • the light emitting device 220 includes a first submount 223A arranged on the lower electrode 121 and a second submount 223A arranged on the lower electrode 121 and different from the first submount 223A.
  • a submount 223B wherein the first laser diode 124A is positioned on the first submount 223A, the second laser diode 124B is positioned on the second submount 223B, and The thickness of the first submount 223A is different than the thickness of the second submount 223B.
  • the heights of the laser emitting layers 181 of the laser diodes 124A and 124B arranged in the upside down direction can be aligned. Therefore, the heights of the optical axes of the laser beams 101 and 102 emitted from the laser diodes 124A and 124B can be aligned, so that the convergence of the laser beams 101 and 102 can be enhanced and the beam quality can be improved.
  • FIG. 25 is a diagram showing the vicinity of the light emitting device 320 of the laser processing system 300 according to Modification 1.
  • FIG. FIG. 26 is a diagram for explaining the positional relationship of each part in the laser processing system 300.
  • the light emitting device 320 according to Modification 1 has the same function and configuration as the light emitting device 120 according to the first embodiment.
  • the laser processing system 100 according to the first embodiment had one SAC lens 130 .
  • the laser processing system 300 according to this modification includes a first SAC lens 330A and a second SAC lens 330B.
  • a diffraction grating 140 and an external resonance lens are provided downstream of the first laser beam 101 and the second laser beam 102 in the traveling direction of the first SAC lens 330A and the second SAC lens 330B.
  • An optical component such as a half mirror 170 for the lens is arranged.
  • the first SAC lens 330A and the second SAC lens 330B are arranged corresponding to the first laser diode 124A and the second laser diode 124B, respectively.
  • a plurality of first laser beams 101 emitted from the first beam twister unit 126A pass through the first SAC lens 330A. At that time, the plurality of first laser beams 101 are converged in the slow direction. Also, the plurality of second laser beams 102 emitted from the second beam twister unit 126B are transmitted through the second SAC lens 330B. At that time, the plurality of second laser beams 102 are converged in the slow direction.
  • the distance X1 from the center position between the light emitting points at both ends of the first laser diode 124A to the center position between the light emitting points at both ends of the second laser diode 124B is It satisfies the formula (1).
  • X1 ⁇ X4 ⁇ X3/(X3-X2) (1)
  • X2 is the focal length of the SAC lenses 330A and 330B
  • X3 is the distance from the first laser diode 124A to the diffraction grating 140
  • X4 is the dimension between the light emitting points at both ends of the first laser diode 124A
  • This is the dimension between the light emitting points at both ends of the second laser diode 124B.
  • the first laser diode 124A, the second laser diode 124B, the first SAC lens 330A, the second SAC lens 330B, and the diffraction grating 140 are arranged such that the relational expression (1) is satisfied. It is
  • the method for manufacturing the light emitting device 320 according to Modification 1 includes steps S100 to S300, as in the first embodiment.
  • the manufacturing method of the laser processing system 300 according to this modified example includes a light emitting device 320 placement step S800 and an optical component placement step S900. Note that step S800 corresponds to step S400 described above.
  • the step S900 includes steps S901 to S903. First, in step S901, the first SAC lens 330A and the second SAC lens 330B are arranged. The step S901 will be described in detail below.
  • the first SAC lens 330A and the second SAC lens 330B are arranged on the laser emission surface side of the first beam twister unit 126A and the second beam twister unit 126B, respectively.
  • a measurement camera (not shown) is placed at the position where the external resonance half mirror 170 should be placed.
  • the combined light of the first laser beam 101 emitted from the first SAC lens 330A and the second laser beam 102 emitted from the second SAC lens 330B is measured by a measurement camera (not shown). do.
  • the arrangement positions of the first SAC lens 330A and the second SAC lens 330B are adjusted so that the beam shape of the combined light is minimized in the slow direction.
  • step S902 the diffraction grating 140 is arranged downstream of the first SAC lens 330A and the second SAC lens 330B in the traveling direction of the laser beams 101 and 102.
  • step S903 the remaining optical components such as the external resonance half mirror 170 are arranged.
  • the laser processing system 300 according to this modified example is manufactured.
  • steps S100, S200, and S300 in the method for manufacturing light-emitting device 320, and steps S800 and S900 in the method for manufacturing laser processing system 300 the above-described relational expression (1) is satisfied.
  • One laser diode 124A, a second laser diode 124B, a first SAC lens 330A, a second SAC lens 330B, and a diffraction grating 140 are arranged.
  • step S202 which is a part of step S200, the laser diodes 124A and 124B are spaced apart from each other so that the distance X1 satisfies the above relational expression (1).
  • the focal length X2 of the SAC lenses 330A and 330B and the distance X3 from the first laser diode 124A to the diffraction grating 140 are predetermined, and the dimension between the light emitting points at both ends of the first laser diode 124A and the second laser diode This is because the dimension X4 between the light emitting points at both ends of 124B is also determined in advance.
  • the laser processing system 300 includes a first SAC lens 330A that adjusts the spread angle in the slow direction of the plurality of first laser beams 101 emitted from the first beam twister unit 126A, and a first A second SAC lens 330B, which is different from the SAC lens 330A, adjusts the spread angle in the slow direction of the plurality of second laser beams 102 emitted from the second beam twister unit 126B.
  • the manufacturing method of the laser processing system 300 includes a step of arranging the light emitting device 320 (step S800), and a plurality of first laser beams 101 emitted from the first beam twister unit 126A in the slow direction.
  • the first SAC lens 330A that converges and the second SAC lens 330B are different lenses, and the second lens that converges the plurality of second laser beams 102 emitted from the second beam twister unit 126B in the slow direction. and a step of arranging the SAC lens 330B (step S901).
  • the laser beams 101 and 102 from the laser diodes 124A and 124B may not be sufficiently focused on the diffraction grating 140 with only one SAC lens. be.
  • the SAC lenses 330A and 330B are provided corresponding to the laser diodes 124 and 124B, respectively.
  • the laser beams 101 and 102 can be adjusted by the lenses 330A and 330B, respectively, to improve the condensability on the diffraction grating 140.
  • FIG. As a result, the beam quality of output light from the laser processing system 300 can be enhanced.
  • the laser processing system 300 includes the diffraction grating 140 arranged downstream of the first SAC lens 330A and the second SAC lens 330B in the traveling direction of the first laser beam 101 and the second laser beam 102. I have more.
  • the first laser diode 124A and the second laser diode 124B extend from the center position between the light emitting points on both ends of the first laser diode 124A to the center position between the light emitting points on both ends of the second laser diode 124B. is the focal length of the first SAC lens 330A as X2, the distance from the first laser diode 124A to the diffraction grating 140 as X3, and the dimension between the light emitting points at both ends of the first laser diode 124A as X4. are arranged so as to satisfy the above-described relational expression (1).
  • the manufacturing method of the laser processing system 300 diffracts to the downstream side of the first SAC lens 330A and the second SAC lens 330B in the direction of travel of the first laser beam 101 and the second laser beam 102.
  • a step of arranging the grid 140 (step S902) is provided.
  • the distance from the center position between the light emitting points on both ends of the first laser diode 124A to the center position between the light emitting points on both ends of the second laser diode 124B is X1
  • the focal length of the first SAC lens 330A is When X2, the distance from the first laser diode 124A to the diffraction grating 140 is X3, and the dimension between the light emitting points at both ends of the first laser diode 124A is X4, the above relational expression (1) is satisfied.
  • the first laser diode 124A, the second laser diode 124B, the first SAC lens 330A and the diffraction grating 140 are arranged.
  • the plurality of first laser beams 101 emitted from the first laser diode 124A can enter the first SAC lens 330A without entering the second SAC lens 330B.
  • the plurality of second laser beams 102 emitted from the second laser diode 124B can be made incident on the second SAC lens 330B without being made incident on the first SAC lens 330A.
  • the light-emitting device 320 has the same function and configuration as the light-emitting device 120 according to the first embodiment. may be the same.
  • FIG. 27 is a schematic diagram showing a light emitting device 420 according to Modification 2, and shows the light emitting device 420 when the upper electrode and the beam twister unit are removed.
  • a laser processing system (not shown) according to Modification 2 includes a light-emitting device 420 having an LD module 490 , and the LD module 490 includes a single submount 423 . That is, the laser diodes 124A, 124B are glued onto a single submount 423.
  • FIG. 1 A laser processing system (not shown) according to Modification 2 includes a light-emitting device 420 having an LD module 490 , and the LD module 490 includes a single submount 423 . That is, the laser diodes 124A, 124B are glued onto a single submount 423.
  • the manufacturing method of the light emitting device 420 according to this modified example is the same as the manufacturing method of the light emitting device 120 of the first embodiment except that the laser diodes 124A and 124B are adhered to a single submount 423.
  • the p side of the first laser diode 124A faces the lower electrode 121
  • the n side of the second laser diode 124B faces the lower side. It may be arranged so as to face the electrode 121 .
  • the submount 423 is provided with a step, and the first laser diode 124A is arranged at a higher position on the submount 423 than the second laser diode 124B.
  • the laser emission layer 181 of the first laser diode 124A and the laser emission layer 181 of the second laser diode 124B are arranged to have the same height, the plurality of lasers of the first laser diode 124A The light emitting point and the plurality of laser light emitting points of the second laser diode 124B are at the same height.
  • the light emitting device 420 is separated from the first upper electrode connected to the n side of the first laser diode 124A so as to be electrically insulated from the first upper electrode, and the second and a second upper electrode connected to the p-side of the laser diode 124B.
  • the p-side of the first laser diode 124A faces the lower electrode 121
  • the n-side of the second laser diode 124B faces the lower electrode 121
  • the laser diodes 124A and 124B By arranging the laser emission points of , the same effect as in the second embodiment can be obtained.
  • the p-side of the first laser diode 124A faces the lower electrode 121
  • the n-side of the second laser diode 124B faces the lower electrode 121
  • the n-side of the first laser diode 124A may be arranged to face the lower electrode 121
  • the p-side of the second laser diode 124B may be arranged to face the lower electrode 121.
  • a plurality of light emitting devices may be mounted.
  • a light emitting device a laser processing system, a method for manufacturing a light emitting device, and a method for manufacturing a laser processing system that can improve beam quality.
  • the light-emitting device, the laser processing system, the method for manufacturing the light-emitting device, and the method for manufacturing the laser processing system according to the present disclosure are suitable for a wavelength beam coupling type semiconductor laser processing device.

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PCT/JP2022/034735 2021-10-27 2022-09-16 発光装置、レーザー加工システム、発光装置の製造方法、及び、レーザー加工システムの製造方法 Ceased WO2023074182A1 (ja)

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JP2004235534A (ja) * 2003-01-31 2004-08-19 Fuji Photo Film Co Ltd レーザ素子およびそのレーザ素子の製造方法並びにそのレーザ素子を用いたレーザモジュール
JP2007527616A (ja) * 2003-07-03 2007-09-27 ピーディー−エルディー、インク． レーザー発光特性調整のためのボリューム・ブラッグ・グレーティングの使用
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