WO2023063675A1 - Wafer manipulator having load-variable counterforce - Google Patents

Wafer manipulator having load-variable counterforce Download PDF

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Publication number
WO2023063675A1
WO2023063675A1 PCT/KR2022/015250 KR2022015250W WO2023063675A1 WO 2023063675 A1 WO2023063675 A1 WO 2023063675A1 KR 2022015250 W KR2022015250 W KR 2022015250W WO 2023063675 A1 WO2023063675 A1 WO 2023063675A1
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Prior art keywords
unit
wafer
disposed
load
manipulator
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PCT/KR2022/015250
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French (fr)
Korean (ko)
Inventor
유규상
김완섭
김효동
황영복
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에이치비솔루션(주)
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Publication of WO2023063675A1 publication Critical patent/WO2023063675A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel

Definitions

  • the present invention relates to a wafer manipulator that can be utilized in TOF-MEIS.
  • a wafer manipulator capable of two-dimensional plane movement, 360-degree continuous azimuthal rotation, and 60-degree polar (elevation) angle rotation, accurate wafer position control, and load-deformation resistance that does not cause deflection problems due to load. .
  • TOF-MEIS is a technology that analyzes the composition and thickness of a sample by measuring the flight time of scattered particles (for example, He particles) after a pulsed beam is incident on a sample to obtain the energy of the scattered particles.
  • scattered particles for example, He particles
  • equipment capable of RANDOM scattering analysis can be analyzed using a sample in the form of a small chip of about 10x10mm, so the manipulator for fixing the sample can also be configured in a small size. Therefore, the chamber in which the device for fixing the sample is disposed may also be formed in a very small size.
  • a wafer manipulator capable of changing the position of such a sample. It is not impossible to manufacture such a wafer manipulator, but in order for the pulse beam to reach the entire sample, the size of the device enabling this becomes very large, and the size of the chamber in which this device is placed also increases. Therefore, a device for performing RANDOM scattering on a sample having such a large size is not easy to manufacture, and the cost of maintaining a vacuum greatly increases.
  • a wafer manipulator in the form of a one-armed robot arm is used, but due to the weight of the sample, the length of the robot arm, and its own weight, the robot arm sags, resulting in measurement error and analysis of the flight time. create impossible problems.
  • the present invention according to an embodiment solves the above problems, and has an object to provide a 300mm wafer manipulator capable of changing the position of a wafer in multiple directions.
  • an object of the present invention is to provide a wafer manipulator having a load counterforce that does not cause a problem that the wafer manipulator sags due to a load of a 300mm wafer and an instrument such as an electrostatic chuck.
  • the wafer manipulator having a load counterforce according to the present invention may be positioned in a chamber to set a position of a wafer.
  • the deflection-preventing wafer manipulator includes a base part, a fixing part formed at a symmetrical position of the base part, contacting a chamber and fixing the position of the base part, and disposed on one side of the base part, It may include a fixed moving unit that moves in a direction and is fixed.
  • the fixing part is formed on one side and the other side of the base part, and is characterized in that it supports the base part at a symmetrical position in contact with the chamber.
  • the base part includes a first base part and a second base part disposed in a direction crossing the direction in which the first base part is disposed at both sides of the first base part, and the fixing part is formed in the second base part.
  • the fixed movable unit may include a arranging unit on which the wafer is placed, and a height adjusting unit arranged under the arranging unit to change the height of the arranging unit.
  • the arranging unit is connected to a positioning unit that changes the length in a direction crossing the height, and the positioning unit is connected to the height adjusting unit.
  • a rotation unit for rotation connection is disposed between the height adjusting unit and the position adjusting unit or between the arranging unit and the position adjusting unit.
  • a first rotating unit fixed to the height adjusting unit and capable of rotating the position adjusting unit is disposed.
  • a second rotating unit fixed to the positioning unit and capable of rotating the positioning unit is disposed between the arranging unit and the positioning unit.
  • the present invention according to an embodiment can change the position of the wafer in multiple directions within the base unit, it is possible to miniaturize the device.
  • the fixing part since the fixing part supports the base part at a symmetrical position, sagging problems may not occur even when the wafer is loaded.
  • the present invention according to an embodiment can precisely move the wafer in multiple directions.
  • the fixing part and the fixed movable part can move in the z-axis direction, the wafer (sample) fixed to the fixed movable part can be aligned with the horizontal axis of the fixed part. Accordingly, the ion beam may be irradiated while being rotated while the position of the fixing unit is fixed relative to the horizontal axis.
  • FIG. 1 is a side view of a wafer manipulator having load counterforce according to an embodiment of the present invention.
  • FIG 2 is an enlarged view of a base portion of a wafer manipulator having a load counterforce according to an embodiment of the present invention.
  • FIG 3 is an enlarged view of a fixed movable part of a wafer manipulator having a load counterforce according to the present invention according to an embodiment.
  • FIG. 1 is a side view of a wafer manipulator having load counterforce according to an embodiment of the present invention.
  • a wafer manipulator having load counterforce includes a base part 100, a fixing part 200, and a fixed moving part 300 disposed in a chamber.
  • the chamber is connected to a pump or the like for discharging air at one side so that the inside of the chamber is maintained at a low pressure, and entry and exit of foreign substances can be prevented.
  • An ion beam irradiation unit capable of irradiating a pulse beam may be disposed above the chamber. The position of the ion beam irradiator may be tilted and changed within the chamber, but there is no problem even if the position is fixed.
  • the base part 100 may be formed in a flat shape, and a fixed moving part 300 may be disposed at a position facing the ion beam irradiation part.
  • the base part 100 may be a plate serving as a basic skeleton on which the fixing part 200 and the fixed moving part 300 are disposed.
  • the base portion 100 may be formed in a shape in which left and right sides are bent, which will be described in detail later.
  • the fixing part 200 is formed in a symmetrical position of the base part 100.
  • the fixing part 200 may serve to fix the base part 100 by coming into contact with the chamber at a symmetrical position of the base part 100 .
  • the fixing part 200 serves to support the base part 100 at symmetrical positions on the left and right sides. Therefore, unlike the prior art, since the base part 100 is supported from both sides, it is possible to prevent the base part 100 from sagging due to a load.
  • the fixing part 200 may be fixed in its position, but may be connected to an adjusting device P capable of x, y, z and rotational movement. Therefore, the fixing part 200 may be rotatably fixed relative to the chamber. Therefore, the fixing part 200 may be connected to a component for applying rotational power located outside the chamber and may be rotated forward or backward based on FIG. 1 according to the power.
  • the fixed moving unit 300 can change the position of the wafer in multiple directions while fixing the wafer. That is, the height of the wafer can be changed, and the position of the wafer facing the incident irradiation unit can be changed. A description of the fixed moving unit 300 will be described later in detail.
  • FIG. 2 is an enlarged view of a base part and a fixing part of a wafer manipulator having a load counterforce according to an exemplary embodiment of the present invention.
  • the base part 100 may be formed in a form in which the left and right sides are bent, respectively, as shown in FIG. 2 when viewed from the side as a whole. Therefore, it may be a form in which a space in the middle is formed when observed as a whole.
  • the base part 100 includes a base part 110 and a second base part 120 .
  • the base portion 110 may be disposed along the transverse direction.
  • a groove may be formed in the center of the base portion 110 .
  • a height adjusting unit 310 to be described later may be fixedly disposed in this groove.
  • the base part 110 is not formed with a groove, it is formed flat, so it does not matter even if the height adjusting part 310 is fixed to the upper surface.
  • the second base part 120 may be disposed along the longitudinal direction on one side and the other side of the base part 110 . Therefore, the base portion 100 can be observed as a shape in which both sides are bent when observed from the side as shown in FIG. 2 . Depending on the shape of the chamber, the shape of the bend can be a right angle, an acute angle, or a curved surface.
  • the fixing part 200 may be disposed along the lateral direction again at a symmetrical position. Accordingly, the fixing part 200 supports the second base part 120 from both sides to prevent the base part 110 from drooping.
  • FIG 3 is an enlarged view of a fixed movable part of a wafer manipulator having a load counterforce according to the present invention according to an embodiment.
  • the fixed moving unit 300 fixes the wafer, but can change the position where the wafer faces the incident irradiation unit according to power supply.
  • the fixed moving unit 300 includes a height adjustment unit 310, a placement unit 320, a position adjustment unit 330 and a rotation unit 340.
  • the height adjustment unit 310 is disposed at the center of the base unit 100 as can be seen in FIG. 1 .
  • the height adjustment unit 310 may be a cylinder, for example.
  • the height of the height adjusting unit 310 may be changed according to power supply.
  • the arranging unit 320 is disposed above the height adjusting unit 310. Therefore, the distance between the placement unit 320 and the incident irradiation unit may be changed according to the operation of the height adjusting unit 310 .
  • a wafer may be placed in the placement unit 320 .
  • the placement unit 320 may include, for example, an adsorption unit that adsorbs with static electricity according to power supply or inhales air according to the environment. Accordingly, the wafer may be stably fixed to the arranging unit 320 .
  • a position adjusting unit 330 may be disposed between the arranging unit 320 and the height adjusting unit 310 .
  • the position adjusting unit 330 moves the arranging unit 320 to the horizontal direction and crosses the horizontal direction with reference to FIG. 3 . It is possible to change the opposing portion between the ion beam irradiation unit and the placement unit 320 by moving in the direction (y in FIG. 3 ).
  • the positioning unit 330 may be, for example, a linear guide or other components. Accordingly, the position adjusting unit 330 may be configured to move a block connected to the shaft of the motor to the right or left when the motor disposed on the left side of FIG. 3 is rotated. Accordingly, the positioning unit 320 disposed above the positioning unit 330 may be moved to the left or right side of FIG. 3 by the operation of the positioning unit 330 .
  • the rotation unit 340 may be disposed between the height adjusting unit 310 and the position adjusting unit 330 or between the arranging unit 320 and the position adjusting unit 330 .
  • a first rotation unit 341 may be disposed between the height adjustment unit 310 and the position adjustment unit 330, and a second rotation unit 342 may be disposed between the arrangement unit 320 and the position adjustment unit 330.
  • the first rotating unit 341 may be fixedly connected to the height adjusting unit 310 and rotatably connected to the position adjusting unit 330 . Therefore, the first rotating unit 341 may rotate the position adjusting unit 330 according to power supply. Therefore, due to the operation of the first rotation unit 341 and the position control unit 330, the position of the placement unit 320 facing the incident control unit may be changed.
  • the second rotating unit 342 is disposed between the position adjusting unit 330 and the arranging unit 320 . Therefore, various parts of the wafer disposed in the placement unit 320 may face the incident irradiation unit. Accordingly, various portions of the wafer may be opposed to the incident irradiation portion.
  • the height adjustment unit 310 is operated to change the heights of the first rotation unit 341, the position adjustment unit 330, the second rotation unit 342, and the placement unit 320
  • the first rotation unit ( 341) is operated to change the angle of the position adjusting unit 330, the second rotating unit 342, and the placing unit 320
  • the position adjusting unit 330 is operated to change the angle of the second rotating unit 342 and the placing unit ( 320) may change the position facing the ion beam irradiation unit
  • the first rotation unit 341 may be operated to change the opposing portion between the placement unit 320 and the ion beam irradiation unit. That is, in the present invention, at least 5 axes of x, y, z, ⁇ , and ⁇ can be changed, so RANDOM scattering is possible.

Abstract

A wafer manipulator having load counterforce is disclosed. The present invention may be located inside a chamber to set the position of a wafer. Since the present invention fixes a base part, on which a fixing and moving part is disposed, by means of a fixing part, the load may not cause tilting. Therefore, the position of the wafer may be changed about five axes, and the present invention may be manufactured in small size.

Description

하중변형 대항력을 가지는 웨이퍼 매니퓰레이터Wafer manipulator with load deflection resistance
본 발명은 TOF-MEIS에서 활용될 수 있는 웨이퍼 매니퓰레이터에 관한 것이다. 특히 2차원 평면이동, 360도 연속 방위각 회전, 60도 polar(elevation) angle 회전이 가능하며 웨이퍼의 위치 제어가 정확하고, 하중에 의한 처짐 문제가 발생되지 않는 하중변형 대항력을 가지는 웨이퍼 매니퓰레이터에 관한 것이다.The present invention relates to a wafer manipulator that can be utilized in TOF-MEIS. In particular, it relates to a wafer manipulator capable of two-dimensional plane movement, 360-degree continuous azimuthal rotation, and 60-degree polar (elevation) angle rotation, accurate wafer position control, and load-deformation resistance that does not cause deflection problems due to load. .
TOF-MEIS는 펄스빔을 시료에 입사시킨 후, 산란되는 입자(예를 들면 He 입자)의 비행시간을 측정하여 산란입자의 에너지를 획득하고 이를 통해 시료의 조성 및 두께를 분석하는 기술이다.TOF-MEIS is a technology that analyzes the composition and thickness of a sample by measuring the flight time of scattered particles (for example, He particles) after a pulsed beam is incident on a sample to obtain the energy of the scattered particles.
TOF-MEIS를 수행할 때 시료의 결정성 때문에 특정한 방향의 산란각에서 수율이 높거나 낮은 문제점이 발생되는데, 이를 해결하기 위해서는 산란각을 의도적으로 조절(Align)할 필요가 있다. 또는 산란각을 특정한 위치에서 고정하지 않고, 다양한 위치로 변경하는 RANDOM 산란을 수행하기도 한다. When performing TOF-MEIS, there is a problem in that the yield is high or low in a scattering angle in a specific direction due to the crystallinity of the sample. To solve this problem, it is necessary to intentionally adjust the scattering angle (Align). Alternatively, RANDOM scattering is performed in which the scattering angle is changed to various positions without fixing it at a specific position.
RANDOM 산란을 수행하기 위하여는 시료의 위치를 변화시킬 필요가 있는바, 이를 위하여 5축으로 시료의 위치를 변경하는 장치가 필요로 한다. In order to perform RANDOM scattering, it is necessary to change the position of the sample, and for this, a device for changing the position of the sample in 5 axes is required.
일반적으로 RANDOM 산란 분석이 가능한 장비는 10x10mm 정도의 작은 chip 형태의 시료를 이용하여 분석할 수 있으므로, 시료를 고정하는 장치(Manipulator)도 소형으로 구성될 수 있다. 그러기에 시료를 고정하는 장치가 배치되는 챔버 역시도 매우 작은 크기로 형성될 수 있다.In general, equipment capable of RANDOM scattering analysis can be analyzed using a sample in the form of a small chip of about 10x10mm, so the manipulator for fixing the sample can also be configured in a small size. Therefore, the chamber in which the device for fixing the sample is disposed may also be formed in a very small size.
그러나 300mm wafer와 같이 시료의 크기가 큰 경우 이러한 시료의 위치를 변경할 수 있는 웨이퍼 매니퓰레이터(manipulator)를 제조하는 것은 매우 어렵다. 이러한 웨이퍼 매니퓰레이터를 제조하는 것이 불가능한 것은 아니나 시료 전체에 펄스빔이 도달하기 위하여는 이를 가능케 하는 장치의 크기가 매우 커지게 되며, 이 장치가 배치되는 챔버의 크기 역시 커지게 된다. 따라서 이러한 큰 크기를 가지는 시료에 RANDOM 산란을 수행하는 장치는 제조가 쉽지 않으며, 진공을 유지하는 비용도 크게 상승하는 문제점이 발생된다. However, when the size of a sample is large, such as a 300 mm wafer, it is very difficult to manufacture a wafer manipulator capable of changing the position of such a sample. It is not impossible to manufacture such a wafer manipulator, but in order for the pulse beam to reach the entire sample, the size of the device enabling this becomes very large, and the size of the chamber in which this device is placed also increases. Therefore, a device for performing RANDOM scattering on a sample having such a large size is not easy to manufacture, and the cost of maintaining a vacuum greatly increases.
이러한 문제점을 해결하기 위하여 외팔 형태의 로봇암 형태의 웨이퍼 매니퓰레이터를 활용하기도 하나 시료의 무게, 로봇암의 길이와 그에 의한 자체적인 무게로 인하여 로봇암이 처지는 문제가 발생되어 비행시간의 측정 오류 및 분석 불가능한 문제를 만든다.In order to solve this problem, a wafer manipulator in the form of a one-armed robot arm is used, but due to the weight of the sample, the length of the robot arm, and its own weight, the robot arm sags, resulting in measurement error and analysis of the flight time. create impossible problems.
일 실시예에 의한 본 발명은 전술한 문제점을 해결한 것으로, 웨이퍼의 위치를 다방향으로 변경할 수 있는 300mm 웨이퍼 매니퓰레이터를 제공하는 데 목적이 있다.The present invention according to an embodiment solves the above problems, and has an object to provide a 300mm wafer manipulator capable of changing the position of a wafer in multiple directions.
또한, 일 실시예에 의한 본 발명은 300mm 웨이퍼와 정전척 등의 기구물의 하중으로 웨이퍼 매니퓰레이터가 처지는 문제가 발생되지 않는 하중 대항력을 가지는 웨이퍼 매니퓰레이터를 제공하는 데 목적이 있다.In addition, an object of the present invention according to an embodiment is to provide a wafer manipulator having a load counterforce that does not cause a problem that the wafer manipulator sags due to a load of a 300mm wafer and an instrument such as an electrostatic chuck.
일 실시예에 의한 본 발명인 하중 대항력을 가지는 웨이퍼 매니퓰레이터는 챔버 내 위치되어 웨이퍼의 위치를 설정할 수 있다.According to an embodiment, the wafer manipulator having a load counterforce according to the present invention may be positioned in a chamber to set a position of a wafer.
일 실시예에 의한 본 발명인 처짐 방지 웨이퍼 매니퓰레이터는 베이스부, 상기 베이스부의 대칭되는 위치에 형성되며, 챔버와 맞닿아 상기 베이스부의 위치를 고정하는 고정부 및 상기 베이스부의 일측에 배치되며, 웨이퍼를 다방향으로 이동시키며 고정하는 고정이동부를 포함할 수 있다.The deflection-preventing wafer manipulator according to the present invention according to an embodiment includes a base part, a fixing part formed at a symmetrical position of the base part, contacting a chamber and fixing the position of the base part, and disposed on one side of the base part, It may include a fixed moving unit that moves in a direction and is fixed.
상기 고정부는 상기 베이스부의 일측과 타측에 형성되며, 상기 챔버와 맞닿으며 대칭되는 위치에서 상기 베이스부를 지지하는 것을 특징으로 한다.The fixing part is formed on one side and the other side of the base part, and is characterized in that it supports the base part at a symmetrical position in contact with the chamber.
상기 베이스부는 제1베이스부와 상기 제1베이스부의 양측에서 상기 제1베이스부가 배치되는 방향과 교차되는 방향으로 배치되는 제2베이스부를 포함하며, 상기 고정부는 상기 제2베이스부에 형성되는 것을 특징으로 한다.The base part includes a first base part and a second base part disposed in a direction crossing the direction in which the first base part is disposed at both sides of the first base part, and the fixing part is formed in the second base part. to be
상기 고정이동부는 상기 웨이퍼가 배치되는 배치부 및 상기 배치부의 하측에 배치되어 상기 배치부의 높이를 변경하는 높이조절부를 포함하는 것을 특징으로 한다.The fixed movable unit may include a arranging unit on which the wafer is placed, and a height adjusting unit arranged under the arranging unit to change the height of the arranging unit.
상기 배치부는 상기 높이와 교차되는 방향으로 길이를 변경하는 위치조절부와 연결되어 있으며, 상기 위치조절부는 상기 높이조절부와 연결된 것을 특징으로 한다.The arranging unit is connected to a positioning unit that changes the length in a direction crossing the height, and the positioning unit is connected to the height adjusting unit.
상기 높이조절부와 상기 위치조절부 사이 또는 상기 배치부와 상기 위치조절부의 사이 중 적어도 어느 하나에는 회전연결을 하는 회전부가 배치되는 것을 특징으로 한다.It is characterized in that a rotation unit for rotation connection is disposed between the height adjusting unit and the position adjusting unit or between the arranging unit and the position adjusting unit.
상기 높이조절부와 위치조절부 사이에는 상기 높이조절부에는 고정되며, 상기 위치조절부를 회전시킬 수 있는 제1회전부가 배치되는 것을 특징으로 한다.Between the height adjusting unit and the position adjusting unit, a first rotating unit fixed to the height adjusting unit and capable of rotating the position adjusting unit is disposed.
상기 배치부와 상기 위치조절부 사이에는 상기 위치조절부에는 고정되며, 상기 배치부를 회전시킬 수 있는 제2회전부가 배치되는 것을 특징으로 한다.A second rotating unit fixed to the positioning unit and capable of rotating the positioning unit is disposed between the arranging unit and the positioning unit.
일 실시예에 의한 본 발명은 베이스부 내에서 다방향으로 웨이퍼의 위치를 변경할 수 있으므로, 장치의 소형화가 가능하다.Since the present invention according to an embodiment can change the position of the wafer in multiple directions within the base unit, it is possible to miniaturize the device.
또한, 일 실시예에 의한 본 발명은 고정부가 대칭되는 위치에서 베이스부를 지지하는바, 웨이퍼의 하중에도 처지는 문제가 발생하지 않을 수 있다.In addition, in the present invention according to an embodiment, since the fixing part supports the base part at a symmetrical position, sagging problems may not occur even when the wafer is loaded.
또한, 일 실시예에 의한 본 발명은 다방향으로 웨이퍼를 정교하게 이동시킬 수 있다.In addition, the present invention according to an embodiment can precisely move the wafer in multiple directions.
또한, 일 실시예에 의한 본 발명은 z축 방향으로 고정부,고정이동부가 움직일 수 있어서, 고정이동부에 고정된 웨이퍼(시료)가 고정부의 수평축과 일치될 수 있다. 따라서 고정부의 수평축을 기준으로 위치가 고정된 채 회전되며 이온빔이 조사될 수 있다. In addition, in the present invention according to an embodiment, since the fixing part and the fixed movable part can move in the z-axis direction, the wafer (sample) fixed to the fixed movable part can be aligned with the horizontal axis of the fixed part. Accordingly, the ion beam may be irradiated while being rotated while the position of the fixing unit is fixed relative to the horizontal axis.
도 1은 일 실시예에 의한 본 발명인 하중 대항력을 가지는 웨이퍼 매니퓰레이터의 측면도이다.1 is a side view of a wafer manipulator having load counterforce according to an embodiment of the present invention.
도 2는 일 실시예에 의한 본 발명인 하중 대항력을 가지는 웨이퍼 매니퓰레이터의 베이스부를 확대 도시한 것이다.2 is an enlarged view of a base portion of a wafer manipulator having a load counterforce according to an embodiment of the present invention.
도 3은 일 실시예에 의한 본 발명인 하중 대항력을 가지는 웨이퍼 매니퓰레이터의 고정이동부를 확대 도시한 것이다.3 is an enlarged view of a fixed movable part of a wafer manipulator having a load counterforce according to the present invention according to an embodiment.
본 발명은 다양한 변환을 가할 수 있고 여러 가지 실시예를 가질 수 있는 바, 특정 실시예를 예시하고 상세한 설명에 상세하게 설명하고자 한다. 그러나, 이는 본 발명을 특정한 실시 형태에 대해 한정하려는 것이 아니며, 본 발명의 사상 및 기술 범위에 포함되는 모든 변환, 균등물 내지 대체물을 포함하는 것으로 이해되어야 한다.Since the present invention can apply various transformations and have various embodiments, specific embodiments will be exemplified and described in detail in the detailed description. However, it should be understood that this is not intended to limit the present invention to specific embodiments, and includes all transformations, equivalents, and substitutes included in the spirit and scope of the present invention.
본 발명에서 사용한 용어는 단지 특정한 실시예를 설명하기 위해 사용된 것으로, 본 발명을 한정하려는 의도가 아니다. 단수의 표현은 문맥상 명백하게 다르게 뜻하지 않는 한, 복수의 표현을 포함한다. 본 발명에서, '포함하다' 또는 '가지다' 등의 용어는 명세서상에 기재된 특징, 숫자, 단계, 동작, 구성요소, 부품 또는 이들을 조합한 것이 존재함을 지정하려는 것이지, 하나 또는 그 이상의 다른 특징들이나 숫자, 단계, 동작, 구성요소, 부품 또는 이들을 조합한 것들의 존재 또는 부가 가능성을 미리 배제하지 않는 것으로 이해되어야 한다. Terms used in the present invention are only used to describe specific embodiments, and are not intended to limit the present invention. Singular expressions include plural expressions unless the context clearly dictates otherwise. In the present invention, terms such as 'include' or 'having' are intended to designate that there is a feature, number, step, operation, component, part, or combination thereof described in the specification, but one or more other features It should be understood that the presence or addition of numbers, steps, operations, components, parts, or combinations thereof is not precluded.
이하, 첨부된 도면을 참조하여 본 발명의 바람직한 실시예들을 상세히 설명한다. 이때, 첨부된 도면에서 동일한 구성요소는 가능한 동일한 부호로 나타내고 있음에 유의한다. 또한, 본 발명의 요지를 흐리게 할 수 있는 공지 기능 및 구성에 대한 상세한 설명은 생략할 것이다. 마찬가지 이유로 첨부 도면에 있어서 일부 구성요소는 과장되거나 생략되거나 개략적으로 도시되었다. Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. At this time, it should be noted that in the accompanying drawings, the same components are indicated by the same reference numerals as much as possible. In addition, detailed descriptions of well-known functions and configurations that may obscure the gist of the present invention will be omitted. For the same reason, in the accompanying drawings, some components are exaggerated, omitted, or schematically illustrated.
도 1은 일 실시예에 의한 본 발명인 하중 대항력을 가지는 웨이퍼 매니퓰레이터의 측면도이다.1 is a side view of a wafer manipulator having load counterforce according to an embodiment of the present invention.
일 실시예에 의한 본 발명인 하중 대항력을 가지는 웨이퍼 매니퓰레이터는 챔버 내에 배치되는 베이스부(100), 고정부(200) 및 고정이동부(300)를 포함한다. A wafer manipulator having load counterforce according to an embodiment of the present invention includes a base part 100, a fixing part 200, and a fixed moving part 300 disposed in a chamber.
챔버는 미도시되어 있으나, 일측에 공기를 배출하는 펌프 등과 연결되어 있어서 그 내부는 저압으로 유지되며, 이물질의 출입이 방지될 수 있다. 그리고 챔버의 상부에는 펄스빔을 조사할 수 있는 이온빔조사부가 배치될 수 있다. 이온빔조사부는 챔버 내에서 틸트되어 위치가 변경될 수 있으나, 고정되어 위치되어도 문제되지 않는다.Although not shown, the chamber is connected to a pump or the like for discharging air at one side so that the inside of the chamber is maintained at a low pressure, and entry and exit of foreign substances can be prevented. An ion beam irradiation unit capable of irradiating a pulse beam may be disposed above the chamber. The position of the ion beam irradiator may be tilted and changed within the chamber, but there is no problem even if the position is fixed.
베이스부(100)는 평평한 형태로 형성될 수 있으며, 이온빔조사부와 대향하는 위치에는 고정이동부(300)가 배치될 수 있다. 베이스부(100)는 고정부(200) 및 고정이동부(300)가 배치되는 기본 뼈대의 역할을 하는 플레이트일 수 있다. 베이스부(100)는 도 1에서 확인할 수 있듯이 좌측과 우측이 절곡된 형태로 형성될 수 있는데 이는 후술하여 자세히 설명하도록 하겠다.The base part 100 may be formed in a flat shape, and a fixed moving part 300 may be disposed at a position facing the ion beam irradiation part. The base part 100 may be a plate serving as a basic skeleton on which the fixing part 200 and the fixed moving part 300 are disposed. As can be seen in FIG. 1 , the base portion 100 may be formed in a shape in which left and right sides are bent, which will be described in detail later.
고정부(200)는 베이스부(100)의 대칭되는 위치에 형성된다. 고정부(200)는 베이스부(100)의 대칭되는 위치에서 챔버와 맞닿아 베이스부(100)를 고정하는 역할을 할 수 있다. 고정부(200)는 도 1에서 도시된 바와 같이 좌측, 우측에서 대칭되는 위치에서 베이스부(100)를 지지하는 역할을 한다. 따라서 종래와 다르게 양측에서 베이스부(100)를 지지하는 바, 하중에 의하여 베이스부(100)가 처지는 것을 방지할 수 있다. The fixing part 200 is formed in a symmetrical position of the base part 100. The fixing part 200 may serve to fix the base part 100 by coming into contact with the chamber at a symmetrical position of the base part 100 . As shown in FIG. 1, the fixing part 200 serves to support the base part 100 at symmetrical positions on the left and right sides. Therefore, unlike the prior art, since the base part 100 is supported from both sides, it is possible to prevent the base part 100 from sagging due to a load.
여기서, 고정부(200)는 그 위치가 고정될 수 있으나, x, y, z 및 회전 이동이 가능한 조절장치(P)에 연결될 수 있다. 그러므로 고정부(200)는 챔버에 상대적으로 회전 가능하게 고정될 수 있다. 따라서 고정부(200)는 챔버 외에 위치된 회전 동력을 인가하는 구성과 연결되어 동력에 따라 도 1을 기준 전방 또는 후방으로 회전될 수도 있다. Here, the fixing part 200 may be fixed in its position, but may be connected to an adjusting device P capable of x, y, z and rotational movement. Therefore, the fixing part 200 may be rotatably fixed relative to the chamber. Therefore, the fixing part 200 may be connected to a component for applying rotational power located outside the chamber and may be rotated forward or backward based on FIG. 1 according to the power.
고정이동부(300)는 웨이퍼를 고정함과 동시에 웨이퍼의 위치를 다방향으로 변경할 수 있다. 즉, 웨이퍼의 높이를 변경할 수 있으며, 입사조사부와 대향하는 웨이퍼의 위치를 변경할 수 있다. 고정이동부(300)에 대한 설명은 후술하여 자세하게 설명하도록 하겠다.The fixed moving unit 300 can change the position of the wafer in multiple directions while fixing the wafer. That is, the height of the wafer can be changed, and the position of the wafer facing the incident irradiation unit can be changed. A description of the fixed moving unit 300 will be described later in detail.
도 2는 일 실시예에 의한 본 발명인 하중 대항력을 가지는 웨이퍼 매니퓰레이터의 베이스부 및 고정부를 확대 도시한 것이다.FIG. 2 is an enlarged view of a base part and a fixing part of a wafer manipulator having a load counterforce according to an exemplary embodiment of the present invention.
베이스부(100)는 전체적으로 측면에서 관찰 시 도 2에서 도시된 바와 같이 좌측과 우측이 각각 절곡된 형태로 형성될 수 있다. 따라서 전체적으로 관찰 시 가운데 공간이 형성된 형태일 수 있다.The base part 100 may be formed in a form in which the left and right sides are bent, respectively, as shown in FIG. 2 when viewed from the side as a whole. Therefore, it may be a form in which a space in the middle is formed when observed as a whole.
베이스부(100)는 베이스부(110) 및 제2베이스부(120)를 포함한다.The base part 100 includes a base part 110 and a second base part 120 .
베이스부(110)는 도 2에서 확인될 수 있듯이 횡방향을 따라서 배치될 수 있다. 베이스부(110)의 중심부에는 홈이 형성될 수 있다. 이 홈에는 후술하여 설명할 높이조절부(310)가 고정적으로 배치될 수 있다. 그러나 베이스부(110)에는 홈이 형성되지 않고, 평평하게 형성되어 상면에 높이조절부(310)가 고정되어도 문제되지 않는다.As can be seen in FIG. 2 , the base portion 110 may be disposed along the transverse direction. A groove may be formed in the center of the base portion 110 . A height adjusting unit 310 to be described later may be fixedly disposed in this groove. However, the base part 110 is not formed with a groove, it is formed flat, so it does not matter even if the height adjusting part 310 is fixed to the upper surface.
도 2에서 확인할 수 있듯이 제2베이스부(120)는 베이스부(110)의 일측과 타측에서 종방향을 따라서 배치될 수 있다. 따라서 베이스부(100)는 도 2와 같이 측면에서 관찰 시 양측이 절곡된 형상으로 관찰될 수 있다. 챔버의 형태에 따라 절곡의 형태는 직각 및 예각, 곡면이 될수 있다. 제2베이스부(120)의 단부에는 대칭되는 위치에서 고정부(200)가 다시 횡방향을 따라서 배치될 수 있다. 따라서 고정부(200)는 제2베이스부(120)를 양측에서 지지하여 베이스부(110)가 처지는 것을 방지할 수 있다.As can be seen in FIG. 2 , the second base part 120 may be disposed along the longitudinal direction on one side and the other side of the base part 110 . Therefore, the base portion 100 can be observed as a shape in which both sides are bent when observed from the side as shown in FIG. 2 . Depending on the shape of the chamber, the shape of the bend can be a right angle, an acute angle, or a curved surface. At the end of the second base part 120, the fixing part 200 may be disposed along the lateral direction again at a symmetrical position. Accordingly, the fixing part 200 supports the second base part 120 from both sides to prevent the base part 110 from drooping.
도 3은 일 실시예에 의한 본 발명인 하중 대항력을 가지는 웨이퍼 매니퓰레이터의 고정이동부를 확대 도시한 것이다.3 is an enlarged view of a fixed movable part of a wafer manipulator having a load counterforce according to the present invention according to an embodiment.
고정이동부(300)는 웨이퍼를 고정하되, 전원공급에 따라 웨이퍼가 입사조사부와 대향하는 위치를 변경할 수 있다. 고정이동부(300)는 높이조절부(310), 배치부(320), 위치조절부(330) 및 회전부(340)를 포함한다. The fixed moving unit 300 fixes the wafer, but can change the position where the wafer faces the incident irradiation unit according to power supply. The fixed moving unit 300 includes a height adjustment unit 310, a placement unit 320, a position adjustment unit 330 and a rotation unit 340.
높이조절부(310)는 도 1에서 확인할 수 있듯이 베이스부(100)의 중앙에 배치된다. 높이조절부(310)는 일례로 실린더일 수 있다. 높이조절부(310)는 전원공급에 따라 높이가 변경될 수 있다. 높이조절부(310)의 상측에는 배치부(320)가 배치된다. 따라서 높이조절부(310)의 동작에 따라 배치부(320)와 입사조사부 사이의 거리가 변경될 수 있다.The height adjustment unit 310 is disposed at the center of the base unit 100 as can be seen in FIG. 1 . The height adjustment unit 310 may be a cylinder, for example. The height of the height adjusting unit 310 may be changed according to power supply. Above the height adjusting unit 310, the arranging unit 320 is disposed. Therefore, the distance between the placement unit 320 and the incident irradiation unit may be changed according to the operation of the height adjusting unit 310 .
배치부(320)에는 웨이퍼가 배치될 수 있다. 배치부(320)는 일례로 전원공급에 따라 정전기로 흡착하는 혹은, 환경에 따라 공기를 흡입하는 흡착부를 포함할 수 있다. 따라서 웨이퍼는 배치부(320)에 안정적으로 고정될 수 있다. A wafer may be placed in the placement unit 320 . The placement unit 320 may include, for example, an adsorption unit that adsorbs with static electricity according to power supply or inhales air according to the environment. Accordingly, the wafer may be stably fixed to the arranging unit 320 .
배치부(320)와 높이조절부(310) 사이에는 위치조절부(330)가 배치될 수 있다.A position adjusting unit 330 may be disposed between the arranging unit 320 and the height adjusting unit 310 .
높이조절부(310)가 배치부(320)와 이온빔조사부 사이의 거리를 조절하는 구성이라면, 위치조절부(330)는 배치부(320)를 도 3을 기준으로 횡방향 및 횡방향과 교차되는 방향(도 3에서 y)으로 이동시켜 이온빔조사부와 배치부(320) 사이의 대향하는 부분을 변경할 수 있다. If the height adjusting unit 310 is configured to adjust the distance between the arranging unit 320 and the ion beam irradiation unit, the position adjusting unit 330 moves the arranging unit 320 to the horizontal direction and crosses the horizontal direction with reference to FIG. 3 . It is possible to change the opposing portion between the ion beam irradiation unit and the placement unit 320 by moving in the direction (y in FIG. 3 ).
위치조절부(330)는 일례로 리니어 가이드 또는 다른 구성일 수 있다. 따라서 위치조절부(330)는 도 3을 기준으로 좌측에 배치된 모터가 회전되면 모터의 샤프트에 연결된 블록이 우측 또는 좌측으로 이동되도록 구성될 수 있다. 따라서 위치조절부(330)의 상측에 배치되는 배치부(320)는 위치조절부(330)의 동작에 도 3을 기준 좌측 또는 우측으로 이동될 수 있다. The positioning unit 330 may be, for example, a linear guide or other components. Accordingly, the position adjusting unit 330 may be configured to move a block connected to the shaft of the motor to the right or left when the motor disposed on the left side of FIG. 3 is rotated. Accordingly, the positioning unit 320 disposed above the positioning unit 330 may be moved to the left or right side of FIG. 3 by the operation of the positioning unit 330 .
또한, 높이조절부(310)와 위치조절부(330) 사이 또는 배치부(320)와 위치조절부(330) 사이에는 회전부(340)가 배치될 수 있다. In addition, the rotation unit 340 may be disposed between the height adjusting unit 310 and the position adjusting unit 330 or between the arranging unit 320 and the position adjusting unit 330 .
높이조절부(310)와 위치조절부(330) 사이에는 제1회전부(341)가 배치될 수 있고, 배치부(320)와 위치조절부(330) 사이에는 제2회전부(342)가 배치될 수 있다. A first rotation unit 341 may be disposed between the height adjustment unit 310 and the position adjustment unit 330, and a second rotation unit 342 may be disposed between the arrangement unit 320 and the position adjustment unit 330. can
제1회전부(341)는 높이조절부(310)에 고정적으로 연결되고 위치조절부(330)를 회전 가능하도록 연결할 수 있다. 따라서 제1회전부(341)는 전원공급에 따라 위치조절부(330)를 회전시킬 수 있다. 그러므로, 제1회전부(341)와 위치조절부(330)의 동작으로 인하여 배치부(320)는 입사조절부와 대향하는 위치가 변경될 수 있다.The first rotating unit 341 may be fixedly connected to the height adjusting unit 310 and rotatably connected to the position adjusting unit 330 . Therefore, the first rotating unit 341 may rotate the position adjusting unit 330 according to power supply. Therefore, due to the operation of the first rotation unit 341 and the position control unit 330, the position of the placement unit 320 facing the incident control unit may be changed.
제2회전부(342)는 위치조절부(330)와 배치부(320) 사이에 배치된다. 따라서 배치부(320)에 배치된 웨이퍼는 다양한 부분이 입사조사부와 대향될 수 있다. 따라서 웨이퍼는 다양한 부분이 입사조사부와 대향될 수 있다.The second rotating unit 342 is disposed between the position adjusting unit 330 and the arranging unit 320 . Therefore, various parts of the wafer disposed in the placement unit 320 may face the incident irradiation unit. Accordingly, various portions of the wafer may be opposed to the incident irradiation portion.
이처럼 본 발명은 높이조절부(310)가 동작되어 제1회전부(341), 위치조절부(330), 제2회전부(342), 배치부(320)의 높이를 변경할 수 있으며, 제1회전부(341)가 동작되어 위치조절부(330), 제2회전부(342), 배치부(320)의 각도를 변경할 수 있으며, 위치조절부(330)가 동작되어 제2회전부(342), 배치부(320)가 이온빔조사부와 대향하는 위치를 변경할 수 있으며, 제1회전부(341)가 동작되어 배치부(320)와 이온빔조사부 사이의 대향하는 부분을 변경할 수 있다. 즉, 본 발명은 x, y, z, θ, φ라는 최소 5축이 변경될 수 있어서, RANDOM 산란이 가능하다.As such, in the present invention, the height adjustment unit 310 is operated to change the heights of the first rotation unit 341, the position adjustment unit 330, the second rotation unit 342, and the placement unit 320, and the first rotation unit ( 341) is operated to change the angle of the position adjusting unit 330, the second rotating unit 342, and the placing unit 320, and the position adjusting unit 330 is operated to change the angle of the second rotating unit 342 and the placing unit ( 320) may change the position facing the ion beam irradiation unit, and the first rotation unit 341 may be operated to change the opposing portion between the placement unit 320 and the ion beam irradiation unit. That is, in the present invention, at least 5 axes of x, y, z, θ, and φ can be changed, so RANDOM scattering is possible.
이상, 본 발명의 일 실시예에 대하여 설명하였으나, 해당 기술 분야에서 통상의 지식을 가진 자라면 특허청구범위에 기재된 본 발명의 사상으로부터 벗어나지 않는 범위 내에서, 구성 요소의 부가, 변경, 삭제 또는 추가 등에 의해 본 발명을 다양하게 수정 및 변경시킬 수 있을 것이며, 이 또한 본 발명의 권리범위 내에 포함된다고 할 것이다.Although one embodiment of the present invention has been described above, those skilled in the art can add, change, delete, or add components within the scope not departing from the spirit of the present invention described in the claims. The present invention can be variously modified and changed by the like, and this will also be said to be included within the scope of the present invention.

Claims (10)

  1. 챔버 내 위치되어 웨이퍼의 위치를 설정하는 하중 대항력을 가지는 웨이퍼 매니퓰레이터에 있어서,In a wafer manipulator positioned in a chamber and having a load counterforce for setting a position of a wafer,
    베이스부;base part;
    상기 베이스부의 대칭되는 위치에 형성되며, 챔버와 맞닿아 상기 베이스부의 위치를 고정하는 고정부; 및a fixing part formed at a symmetrical position of the base part and contacting the chamber to fix the position of the base part; and
    상기 베이스부의 일측에 배치되며, 웨이퍼를 다방향으로 이동시키며 고정하는 고정이동부A fixed moving unit that is disposed on one side of the base unit and moves and fixes the wafer in multiple directions.
    를 포함하는 하중 대항력을 가지는 웨이퍼 매니퓰레이터.A wafer manipulator having a load counterforce comprising a.
  2. 제1항에 있어서,According to claim 1,
    상기 고정부는the fixing part
    상기 베이스부의 일측과 타측에 형성되며, 상기 챔버와 맞닿으며 대칭되는 위치에서 상기 베이스부를 지지하는 것Formed on one side and the other side of the base portion, and supporting the base portion at a symmetrical position in contact with the chamber
    을 특징으로 하는 하중 대항력을 가지는 웨이퍼 매니퓰레이터.A wafer manipulator having a load counterforce characterized by
  3. 제2항에 있어서,According to claim 2,
    상기 베이스부는the base part
    제1베이스부와 상기 제1베이스부의 양측에서 상기 제1베이스부가 배치되는 방향과 교차되는 방향으로 배치되는 제2베이스부를 포함하며,A first base portion and a second base portion disposed in a direction crossing the direction in which the first base portion is disposed at both sides of the first base portion,
    상기 고정부는 상기 제2베이스부에 형성되는 것The fixing part is formed in the second base part
    을 특징으로 하는 하중 대항력을 가지는 웨이퍼 매니퓰레이터.A wafer manipulator having a load counterforce characterized by
  4. 제1항에 있어서,According to claim 1,
    상기 고정이동부는The fixed moving part
    상기 웨이퍼가 배치되는 배치부 및 상기 배치부의 하측에 배치되어 상기 배치부의 높이를 변경하는 높이조절부를 포함하는 것including a placement unit on which the wafer is placed and a height adjusting unit disposed under the placement unit to change the height of the placement unit;
    을 특징으로 하는 하중 대항력을 가지는 웨이퍼 매니퓰레이터.A wafer manipulator having a load counterforce characterized by
  5. 제4항에 있어서,According to claim 4,
    상기 배치부는 상기 높이와 교차되는 방향으로 길이를 변경하는 위치조절부와 연결되어 있으며,The arranging unit is connected to a positioning unit that changes the length in a direction crossing the height,
    상기 위치조절부는 상기 높이조절부와 연결된 것The position adjusting unit is connected to the height adjusting unit.
    을 특징으로 하는 하중 대항력을 가지는 웨이퍼 매니퓰레이터.A wafer manipulator having a load counterforce characterized by
  6. 제5항에 있어서,According to claim 5,
    상기 높이조절부와 상기 위치조절부 사이 또는 상기 배치부와 상기 위치조절부의 사이 중 적어도 어느 하나에는 회전연결을 하는 회전부가 배치되는 것A rotating part for rotational connection is disposed between the height adjusting part and the position adjusting part or between the arranging part and the position adjusting part.
    을 특징으로 하는 하중 대항력을 가지는 웨이퍼 매니퓰레이터.A wafer manipulator having a load counterforce characterized by
  7. 제6항에 있어서,According to claim 6,
    상기 높이조절부와 위치조절부 사이에는Between the height adjusting unit and the position adjusting unit
    상기 높이조절부에는 고정되며, 상기 위치조절부를 회전시킬 수 있는 제1회전부가 배치되는 것It is fixed to the height adjustment unit, and a first rotation unit capable of rotating the position adjustment unit is disposed.
    을 특징으로 하는 하중 대항력을 가지는 웨이퍼 매니퓰레이터.A wafer manipulator having a load counterforce characterized by
  8. 제6항에 있어서,According to claim 6,
    상기 배치부와 상기 위치조절부 사이에는Between the arranging unit and the position adjusting unit
    상기 위치조절부에는 고정되며, 상기 배치부를 회전시킬 수 있는 제2회전부가 배치되는 것A second rotation unit that is fixed to the position adjusting unit and capable of rotating the arrangement unit is disposed
    을 특징으로 하는 하중 대항력을 가지는 웨이퍼 매니퓰레이터.A wafer manipulator having a load counterforce characterized by
  9. 제5항에 있어서,According to claim 5,
    상기 위치조절부는 상기 고정이동부를 횡방향 및 횡방향과 교차되는 방향으로 이동시킬 수 있는 것The position adjusting unit can move the fixed moving unit in the lateral direction and in a direction crossing the lateral direction.
    을 특징으로 하는 하중 대항력을 가지는 웨이퍼 매니퓰레이터.A wafer manipulator having a load counterforce characterized by
  10. 제1항에 있어서,According to claim 1,
    고정부는 x, y, z축 또는 회전 이동 가능한 조절장치에 연결된 것The fixed part is connected to a control device capable of moving in the x, y, z axis or rotation.
    을 특징으로 하는 하중 대항력을 가지는 웨이퍼 매니퓰레이터.A wafer manipulator having a load counterforce characterized by
PCT/KR2022/015250 2021-10-12 2022-10-11 Wafer manipulator having load-variable counterforce WO2023063675A1 (en)

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KR20010013423A (en) * 1997-06-04 2001-02-26 조셉 제이. 스위니 Carousel wafer transfer system
KR20110009953U (en) * 2010-04-14 2011-10-20 박광준 Substrate transferring apparatus
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KR20010013423A (en) * 1997-06-04 2001-02-26 조셉 제이. 스위니 Carousel wafer transfer system
KR20110009953U (en) * 2010-04-14 2011-10-20 박광준 Substrate transferring apparatus
KR20120088286A (en) * 2011-01-31 2012-08-08 주식회사 나온테크 Substrate transport apparutus having respectively driven hands and method for controlling the same
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