JPH03257751A - Sample chamber of ion beam analysis device - Google Patents

Abstract

PURPOSE:To analyze in a wide scope and a wide variety efficiently by leading in various ion beams of different properties along the same beam irradiating axis and using these ion beams selectively. CONSTITUTION:An ion beam leading-in port 2 to lead in an ion beam B of a large diameter or a small diameter selectively along the same beam irradiating axis BL is provided, the ion beam of a larger diameter is applied to plural samples 5 loaded on a multiple sample positioning device 3 respectively in order, and an analysis using a larger diameter of ion beam is carried out. And on a sample 8 loaded on a goniometer 7 which is provided to move forward and backward to the position crossing with the beam irradiating axis BL between the multiple sample positioning device 3 and the beam leading-in port 2 and can position the sample highly precisely, the beam spot of a smaller diameter of ion beams is focused, and the analysis using a smaller diameter of ion beam is carried out. In such a way, a wide variety of analyses can efficiently be carried out.

Description

[Detailed Description of the Invention] [Industrial Application Field] The present invention is applied to the semiconductor technology field, medical care, biotechnology, and other fields, in which the composition and physical properties of a minute region of a sample are analyzed using a high-energy charge beam. Regarding the sample chamber of an ion beam analyzer, in detail, the sample chamber of an ion beam analyzer has improved functionality so that it can use various ion beams with different ion types and energies, and can handle a wide variety of analyses. It is related to.

[Conventional technology]

In the field of semiconductor technology, huge amounts of information are processed by computers, so there is a demand for increased storage capacity and faster information processing speed. Therefore 15 open air 3-2577
51 (2) The development of high density ICs is progressing from LSI to ■LS■, and furthermore to three-dimensional ICs, and with this, individual elements and their wiring, etc. are becoming more and more microscopic. It is becoming more and more layered and multi-layered, and very shallow areas from the surface are being used.

On the other hand, analysis of atomic distribution in the microscopic 2A region is important for the development and process research of such ICs, and recently, the Rutherford backscattering method (RBS) using a high-energy (MeV) light ion beam and the The effectiveness of analytical techniques such as particle-excited X-ray spectroscopy (P'1XE) has been recognized, and ion beam analyzers capable of these analyzes are being widely used.

FIG. 6 shows a typical example of the configuration and arrangement of a conventional ion beam analyzer. In this example, a high-energy ion beam B is emitted from an accelerator (61), and the ion type and energy are selected using a deflection analysis NN stone (62).
followed by an objective collimator (63) and electrolithic lens (64).
) as the intended focused ion beam into the sample chamber (65
), the beam spot is focused on the target (60) in the sample chamber (65), that is, the sample for analysis, and the ions, electrons, photons, etc. that are emitted from the sample surface by the irradiation are The detector (6G) in the sample chamber (65) detects the [! By analyzing elements such as energy, angle, etc., information on the atomic distribution near the extreme surface of the sample or from the surface to the interior can be obtained.

In these ion beam analyzers, RB
In the S method, scattered ions are detected, and in the PIXE method, characteristic X-rays are detected for measurement and analysis, but the target and range of analysis differs depending on the type of ion beam used.

That is, in the random RBS method, which measures the backscattered ions of ions that are randomly incident on the crystal of a sample, by using a conventional ion beam (hereinafter abbreviated as large diameter beam) with a diameter on the -rigid order,
Film thickness measurement/interface structure evaluation in functional thin film semiconductors, etc.;
Non-destructive inspection of multilayer structures; evaluation of ion implantation/diffusion processes, etc., was performed using a micro ion beam focused to a diameter on the order of μm (hereinafter abbreviated as small diameter beam).
By using this, verification of maskless ion implantation process conditions in functional thin film semiconductors, etc.; diagnosis of wafers after microfabrication; migration evaluation of multilayer wiring structures, etc. can be performed. In addition, in the channeling RBS method, which measures the backscattered ions of a parallel large-diameter beam incident parallel to the crystal axis of the sample, it is possible to evaluate the crystallinity of a crystalline yi film after ethoching in electronic materials, etc.; Restoration of crystallinity by annealing; determination of the crystal structure of the ceramic super-flattened 4FA film; evaluation of lattice defects on the crystal surface, etc.

In addition, the PIXE method, which measures characteristic X-rays emitted from a sample by ion irradiation, uses a large-diameter beam to quantitatively analyze pollutant elements in dust in environmental analysis, etc., and to identify biological silk and weave in medical analysis, etc. Quantitative evaluation of trace elements; Age identification using trace elements is performed in archaeological analysis, etc.; on the other hand, by using a narrow beam, distribution of trace elements in cells can be measured in bioanalysis, etc.; hair, shellfish in environmental analysis, etc. , time-series quantitative evaluation of pollutant elements contained in tree rings; quantitative evaluation of trace element composition in diseased cells in medical analysis, etc.

In this way, ion beam analyzers can handle a wide range of different types of ion beams depending on the type of ion beam used.
It becomes possible to measure and analyze a variety of things.

For this reason, various studies have been conducted on device configurations that can use multiple types of ion beams in the same device, and, for example, a multipurpose ion analysis facility with the configuration shown in FIG. 7, which is a perspective view, has been devised. and has been put into practical use. In this example, a high-energy ion beam emitted from an accelerator (71) is directed by an ion deflecting electromagnet (
72), the ion species and energy are selected, and the ion beams, each with different characteristics, are bent in three different directions and distributed to three analysis lines (73), (74), and (75), and various types of analysis lines corresponding to the characteristics are sorted. The configuration is used for analysis. In addition, the ion beam distributed to each analysis line is transferred to the objective collimator and NM! installed in these analysis lines. A beam of a predetermined shape and diameter is formed by a stone lens, and each analysis line (73), (74), (75)
The specimens are introduced into sample chambers (76), (77), and (78) each having a different configuration and arranged at the terminal end of the sample chamber.

In this conventional multipurpose ion analysis equipment, in the first analysis line (73), a random RB using a narrow beam is used.
Analysis by the S method and the PIXE method is carried out by channeling R using a parallel large diameter beam in the second analysis line (74).
In addition to the analysis by the BS method, the third analysis line (75) performs analysis by the random RBS method and the PIXE method using a large diameter beam, and the entire system is configured to support a wide variety of analyzes over a wide range. It is said that

[Problems to be Solved by the Invention] As mentioned above, in an ion analyzer, if the type of ion beam used can be changed variously, it becomes possible to perform a wide variety of analyzes over a very wide range. When using a conventional ion analyzer, this device is essentially a single-function device that uses a specific type of ion beam. It is configured to select ion types by deflecting and irradiate a target with a specific ion beam along a specific irradiation line, so it can only be used for a limited number of types of analysis.
Like the latter conventional multipurpose ion analysis equipment mentioned above, the beam from the accelerator is sorted by ion type and energy using an ion bending electromagnet, and the ion beams, each with different characteristics, are distributed to multiple analysis lines, and various types of ion analysis equipment are used for each purpose. However, in this case, although it could support a wide variety of analyzes over a wide range of areas, each analysis line after the ion deflection electromagnet had to be configured differently depending on its purpose. Not necessarily,
In addition to the increased size of the device, each analysis line spreads out at a different angle, leading to problems such as an increase in device cost and installation space.

Therefore, the inventors of the present invention have conducted various studies in order to solve the problems of these conventional techniques and obtain an ion beam analyzer that is capable of performing a wide variety of analyzes and has a compact configuration. To achieve this, we need to: ■ variably select a specific type of ion beam so that it can irradiate a target along the same beam irradiation axis; We concluded that it is most effective to introduce various ion beams into the same sample chamber so that we can selectively use these ion beams with different characteristics to perform various analyses. I got it.

As a result of various studies to realize these ideas,
Regarding variably selecting a specific type of ion beam and irradiating the target along the same beam irradiation axis,
For example, the configuration of the focused ion beam device (Japanese Patent Application No. 1-302392) previously filed by the present inventors includes an objective collimator placed immediately downstream of the accelerator, and a gap between the objective collimator and the electromagnetic lens. Ion species/energy analysis components [for example, Vienna (EXB
) type device analyzer], but it is possible to achieve this by adopting a configuration with A sample chamber with a configuration that allows analysis using selective ion beams has not yet been known, and it has been found that a sample chamber with a new configuration that meets this purpose is required.

The present invention has been made in view of the above problems, and includes:
To provide a sample chamber for an ion beam analyzer that can introduce various ion beams with different characteristics along the same beam irradiation axis and selectively use these ion beams to efficiently perform a wide variety of analyses. This is the purpose.

[Means for solving the yA problem] The present invention provides a sample for an ion beam analyzer that irradiates a sample placed inside with an ion beam and analyzes the sample using the Rutherford backscattering method or particle-excited X-ray spectroscopy. In order to achieve the above-mentioned purpose, the following technical measures are taken in the chamber. That is, the present invention has a beam introduction port that selectively introduces a large-diameter or small-diameter ion beam along the same beam irradiation axis, and also has a plurality of samples mounted for analysis using the large-diameter ion beam. , one of these samples was selectively irradiated with the beam 1N square 3-
257751 (4) A multi-sample positioning device that can be positioned on an axis, and a small diameter The apparatus is characterized in that it is equipped with a goniometer capable of mounting a sample for analysis using an ion beam and positioning the sample with high accuracy on the beam irradiation axis.

Further, the invention according to claim 2 is characterized in that an annular type detector for detecting scattered ions is disposed on the beam irradiation axis between the goniometer and the beam introduction port.

Further, in the invention according to claim 3, while the annular detector is provided so as to be retractable from the beam irradiation axis,
It is characterized in that it is equipped with a detection section of a microscope and has a moving mechanism that brings the detection section of the microscope close to the sample mounted on the goniometer.

The invention according to claim 4 also provides a load-lock chamber that is provided in communication with the sample chamber and whose interior can be degassed independently of the sample chamber; and a sample attachment/detachment mechanism capable of holding a sample for analysis with a small-diameter ion beam and moving the sample between the load rotator chamber and the goniometer and attaching and detaching the sample to the goniometer. It is characterized by

Further, in the invention as set forth in claim 5, the goniometer is capable of mounting a sample for analysis using a large-diameter ion beam, and the sample mounting surface thereof is tiltable about a point intersecting the beam irradiation axis. It is characterized by

[Effect]

The sample chamber of the ion beam analyzer according to the present invention includes:
It has a beam introduction port that selectively introduces large diameter or small diameter ion beams along the same beam irradiation axis,
The multi-sample positioning device is equipped with a multi-sample positioning device that is equipped with a plurality of samples for analysis using a large-diameter ion beam and can selectively position one of these samples on the beam irradiation axis. A large-diameter ion beam is sequentially irradiated onto each of multiple samples mounted on the
Analysis by method can be performed efficiently.

In addition, it is installed so that it can move forward and backward with respect to the position intersecting the beam irradiation axis between the multi-sample positioning device and the beam introduction port, and the sample for analysis by the mounted small diameter ion beam can be precisely aligned on the beam irradiation axis. Since it has a goniometer that can be positioned internally, the beam spot of the narrow ion beam is focused on the sample mounted on the goniometer, and analysis using the random RBS method and PIXE method using the narrow ion beam can be performed. It can be done. In addition, since the goniometer can move forward and backward from a position intersecting the beam irradiation axis, when performing analysis using the large diameter ion beam of test Lj4 mounted on the multi-sample positioning device, The ion beam can pass through without interfering with irradiation of the sample with the ion beam.

In the invention as claimed in claim 2, an annular detector that can make a large solid angle of 274 degrees with respect to the sample mounted on the goniometer is disposed on the beam irradiation axis between the goniometer and the beam introduction port, so that the sample is Detects scattered ions with high precision, allowing for more advanced measurements and
Analysis can be performed.

In the invention as claimed in claim 3, while the annular detector is retracted from the beam irradiation axis, the detection section of the microscope can be brought close to the sample mounted on the goniometer using the moving mechanism, so that the ion beam can be irradiated. After detecting scattered ions with an annular detector, the surface of the sample can be observed directly with a microscope, even when the allowable irradiation beam dose is small, such as in RBS analysis using a small diameter ion beam. , detection and observation by both of these can improve the accuracy of measurement and analysis.

The invention according to claim 4 has a load lock chamber that communicates with the sample chamber and can be independently degassed with a gate valve interposed therebetween, and also has a load lock chamber that holds the sample and is connected to the load lock chamber. Since it has a sample attachment/detachment mechanism that allows the sample to be moved between the goniometer and the sample to be attached and detached from the goniometer, the sample on the goniometer can be exchanged while maintaining the vacuum state in the sample chamber, and a small diameter ion beam can be exchanged. analysis can be carried out continuously and efficiently.

In the invention set forth in claim 5, the goniometer can also mount a sample for analysis using a large diameter ion beam, and
Since the sample mounting surface is tiltable around a point that intersects the beam irradiation axis, it is possible to easily adjust the incident angle of the beam irradiated onto the sample mounted on the goniometer. Channeling R using parallel beams
Analysis by the BS method can be performed reliably and efficiently.

Note that the above-mentioned large diameter ion beam is a Conventional ion beam whose beam diameter is on the order of WA11.
On the other hand, a small-diameter ion beam is a micro-ion beam focused to a diameter on the order of μm.
It is a high-quality ion beam.

[Actual hIlI example]

Embodiments of the present invention will be described below with reference to the drawings.

FIG. 1 is a top sectional view showing an embodiment of the structure of the sample chamber of the present invention and an example of its arrangement. In the same figure, (1
) is a chamber, the chamber (1) is formed as a vacuum pressure vessel, and has a beam inlet (2) in its front wall.
), and a rear door (1a) that can be opened and closed via a hinge (Ib) is provided on the rear wall portion facing the beam introduction port (2). The chamber (1) is communicated with a supply/exhaust means (not shown) via a supply/exhaust pipe (not shown), and is capable of evacuating its interior to a predetermined degree of vacuum.

On the other hand, the beam introduction port (2) has a cylindrical shape that protrudes toward the incident side of the ion beam B, and ions are ionized along the extension line of its central axis, that is, the beam irradiation axis BL shown by the chain double-dashed line in the figure. It is assumed that beam B is introduced into the chamber (1).

(3) is a multi-sample mounting board, the multi-sample mounting board (3)
is a turntable-type disc-shaped device with a chamber (1
) is arranged on the inner surface of the rear door (1a), and its rotating shaft is freely rotatably supported by the rear door (1a) via a vacuum-sealed bearing.
4), and is rotated by this motor (4). The multi-sample mounting board (3) is equipped with a large number of sample holders arranged at equal pitches on the same pinch circle on the outer periphery of the front surface, and is equipped with a large number of sample holders (5) for analysis using a large-diameter ion beam. are mounted, one contact point of the pitch circle is aligned with the beam irradiation axis BL, and the beam is rotated in a direction perpendicular to the beam irradiation axis BL.

On the other hand, the motor (
4) is controlled by a motor driver (not shown), and the angular phase of rotation and stop of its output shaft can be set and adjusted with high precision. (5) Each can be selectively or sequentially positioned on the beam irradiation axis BL. In addition, the rear door (la) can be opened with these multi-sample mounting board (3) and motor (4) attached, and by opening this rear door (1a), the multi-sample mounting board (5) can be opened. Attachment and detachment to (3) can be easily performed outside the chamber (1).

(6) is a detector, and the detector (6) is, for example,
It consists of a coin-shaped detector, etc., and is placed obliquely in front at a certain angle with the beam irradiation axis BL for the multi-sample loading board (3).
Scattered ions and characteristics Xl1lil emitted from the sensor are detected and transmitted as electrical signals to a measuring/analyzing device (not shown), which is not shown here.

(7) is a goniometer, and the goniometer (7)
is, for example, a precision triaxial type for high vacuum equipped with a vacuum flange, and penetrates the side wall of the chamber (1) located in front of the multi-sample loading board (3).
1) It is attached to the side wall via a vacuum flange, the driving part is located outside the chamber (1), the sample mounting part (7a) on the driven side is located inside the chamber (1), and it is perpendicular to the beam irradiation axis BL. A sample (8) for analysis with a narrow-diameter ion beam is mounted on the sample holder (7a), and the beam spot of the focused ion beam is aligned on the beam irradiation axis BL. can be positioned with high precision.

In addition, this goniometer (7) also has a sample mounting part (7).
Samples (8) mounted with a) tilted in any direction of the three axes of X-Y-Z are each 2078 degrees with respect to the beam irradiation axis BL.
It can be tilted in all directions within the range of 3-257751 (e) degrees and can be retracted from the beam irradiation axis BL. Furthermore, the step motor provided in the goniometer (7) for these operations is connected to a control device attached to the measurement/analysis device (not shown).

(9) is a detector, and the detector (9) is, for example,
It consists of a coin-shaped detector, etc., and is placed obliquely in front at a certain angle with the beam irradiation axis BL with respect to the sample mounting part (7a) of the goniometer (7). Scattered ions and characteristic X-rays are detected and transmitted as electrical signals to the measuring/analyzing device (not shown).

0ω is a load-lock chamber, and the load-lock chamber 0ω is disposed on the outside of the side wall of the chamber (1) opposite to the location where the goniometer (7) is disposed, and is connected through a communication port provided with a gate valve (10a). and communicates with the inside of the chamber (1). Further, the load lock chamber 0ω is independently connected to an air supply/exhaust means, and can be evacuated independently from the chamber (+).

(!1) is a manipulator, and the manipulator 01) is driven by a cylinder mechanism 021 connected to the load-lock chamber 0 (arranged in D and connected to the load-lock chamber 00), and the manipulator 01) grips the sample at its tip Part (l
The sample was held in the load lock chamber 00) and on the sample mounting part (7a) of the goniometer (7), and was loaded on the sample 81 part (7a) of the goniometer (7). The sample (8) is attached and detached and exchanged via the load lock chamber OI. Further, the cylinder mechanism 021 is controlled by the same control device as the gate valve (10a), and drives the manipulator 00 only when the gate valve (10a) is opened.

Conversely, in Figure 1, (a) is an electrostatic accelerator;
is an objective collimator, (C) is a Wien (EXB) type mass spectrometer, (d) is an ion selection slit, and (e) is a picture electrode electromagnetic lens, which were previously filed by the inventors. An example of the configuration and arrangement of a focused ion beam device is used. In these configurations, for example, He.
” are accelerated in an accelerator tube and emitted as a high-energy ion beam of several MeV, and then directly narrowed down to several tens of micrometers by an objective collimator (b) and then subjected to Vienna (EXB) mass spectrometry. Then, due to the @ field created under certain conditions in this Vienna (E Ion selection slit (
d), the charge is neutralized and eliminated. On the other hand, the 11e゛ ion beam B that has traveled straight passes through the subsequent quadrupole electromagnetic lens (e) and enters the sample chamber of this embodiment from its beam introduction port (2) along the beam irradiation axis BL. It is.

In addition, the ion beam B introduced from the beam introduction port (2) is narrowed down to a diameter of about 0.11RI11-+11RI by the ion selection slit (d) without operating the quadrupole electromagnetic lens (e). The ion beam is focused by the operation of the quadrupole 741M lens (e), and the focused ion beam connects a beam spot with a diameter on the order of μm. The cooperative operation of the ion selection slit (d) and the quadrupole electromagnetic lens (e). Parallel ions with a diameter of the order of 276
One of the types of one beam is selected.

The operation of the sample chamber of this example having the above configuration is as follows:
A summary explanation will be given using FIGS. 2 and 3, which are explanatory diagrams thereof. Note that in FIGS. 2 and 3, the same numbers as those in FIG. 1 are the same, so a description thereof will be omitted here.

First, a case in which analysis is performed using a small-diameter ion beam will be explained using FIG. 2. In this case, a focused ion beam that is focused by the operation of the magnetic lens (e) is selected as described in 1 above, and the focused ion beam introduced from the beam introduction port (2) is a beam inside the chamber (1). A beam spot is formed and the beam is incident on the sample (8) mounted on the sample mounting part (7a) of the goniometer (7) located on the irradiation axis BL. Ions or excited characteristic X-rays scattered from the sample (8) due to the incidence of this focused ion beam are detected by a detector (9) in the chamber (1), and their type, energy, angle, etc. are analyzed. Then, physical property data of the sample (8) is obtained.

In this case, the sample (8) can be positioned at the beam spot of the ion beam with high precision using the goniometer (7), so the random RBS method using a small diameter ion beam can be used. It is possible to perform analysis using the PIXE method with high accuracy, and it is also possible
sample i! of the goniometer (7) while maintaining the degree of vacuum in the chamber (1). Since the sample (8) on the storage section (7a) can be exchanged by the manipulator (11), analysis using these small diameter ion beams can be carried out continuously and efficiently.

On the other hand, when performing analysis using a parallel ion beam with a large diameter, select the parallel ion beam formed by the cooperative operation of the above ion selection slit (d) and the quadruple 8iI electromagnetic lens (e), and introduce the beam. The parallel ion beam introduced from the port (2) is aligned with the beam irradiation axis BL in the chamber (1).
The sample holder (7a) of the goniometer (7) located above
), and obtain the physical property data of the sample (8) in the same manner as above.
8) can be tilted in all directions within a range of 20 degrees with respect to the beam irradiation axis BL to adjust the angle of incidence of the parallel ion beam on the sample (8). , channeling RB, which requires a parallel ion beam to be incident parallel to the crystal axis of the sample.
Analysis by the S method can be performed reliably and efficiently.

Next, the case of performing analysis using a large diameter ion beam will be explained using FIG. 3. In this case, the ion beam narrowed down to a diameter of about 0.1mff1 to 1m by the ion selection slit (d) is selected, and the beam introduction port (2
), and is introduced from the beam introduction port (2) along the beam irradiation axis BL. In this case, the sample mounting part (7a) of the goniometer (7) and the manipulator (I
t) is evacuated to a position away from the beam irradiation line BL, and the introduced ion beam is transferred to the multi-sample loading board (
An ion beam having a diameter on the order of Rindai is incident onto a sample (5) mounted on the ion beam 3) and positioned on the beam irradiation axis BL. Ions or excited characteristic X-rays scattered from the sample (5) by the incidence of this ion beam are detected by the detection H (6) in the chamber (1), and their type, energy, angle, etc. are analyzed. , to obtain physical property data of the sample (5).

In addition, in this case, since it is possible to sequentially and continuously fire the ion beam onto each of the many samples (5) mounted on the multi-sample mounting board (3), a large diameter ion beam is used. Random RBS method and PIXE method analysis can be carried out efficiently 6. As mentioned above, by using the sample chamber of this example, it is possible to perform various types of beams with different characteristics such as small diameter, large diameter and parallel beams. When ion beams are introduced along the same beam irradiation axis, these ion beams can be selectively used to perform a wide variety of analyzes within the same chamber. can be used for multi-purpose analysis, and can be made compact and inexpensive.

In addition, in the sample Nayamba of this embodiment according to the present invention, analysis using a large-diameter ion beam that requires relatively low sample positioning accuracy is performed downstream of the introduced ion beam, and While the configuration allows efficient loading and unloading of samples as well as processing of samples, it is also possible to perform analysis using a small diameter ion beam that requires high positioning accuracy.
Each sample is analyzed individually on the upstream 277- side of the same beam irradiation axis, and each sample can be positioned with high precision, so each analysis can be performed efficiently with reproducibility and precision that meet the purpose. be able to.

Next, the configuration of another embodiment of the sample chamber of the present invention is as follows.
This will be explained using FIG. 4a, which is a cross-sectional view of the top, and FIG. 4, which is a cross-sectional view taken along line A-A of FIG. 4a. In addition, Figure 4a
Components in FIG. 4 that are designated by the same numbers as in FIG. 1 are the same and will not be described here.

In FIGS. 4a and 4, the side is an annular type detector, and the annular type detector 0 is
It penetrates the chamber (1) side wall and the chamber (1)
) The beam irradiation axis is attached to the tip of the piston shaft (14a) of the cylinder Oa, which is attached to the outside of the side wall via a vacuum flange, and is located at a distance from the sample holder (7a) of the goniometer (7). It is located perpendicularly to the instrument so that it can be retracted, and detects scattered ions and characteristic X-rays emitted from the sample (8) when the ion beam is irradiated through the center hole (13a). (8
) Here, it is transmitted as an electrical signal to a measuring/analyzing device not shown in the figure.

09 is an optical microscope, and the optical microscope (+51 is
It penetrates the side wall of the chamber (1) which is angularly phased approximately 90 degrees from the mounting position of the cylinder circle, and the chamber (1)
Slide mechanism O attached to the side wall via a vacuum flange
e, and by the operation of the slide mechanism aω,
The microscope lens (15a) is brought close to the sample (8) mounted on the sample holder (7a) of the goniometer (7), and the surface of the sample (8) is observed under the microscope from outside the chamber (1). It is considered possible. Furthermore, when the microscope lens (15a) of the optical microscope 051 approaches the sample (8), the annular detector 03) is retracted from the beam irradiation axis BL, as shown in FIG.

Note that although an optical microscope is used in this embodiment, an electron microscope may be used instead.

In the sample chamber of this embodiment having these configurations, the annular detector 0 can have a large solid angle with respect to the sample (8) mounted on the sample holder (7a) of the goniometer (7), so that the ion Ions scattered from the sample (8) by beam irradiation can be detected with high precision, making it possible to perform more advanced measurements and analysis. Since it can be observed directly, the accuracy of measurement and analysis can be made more reliable.

It goes without saying that the sample chamber of this example can be equipped with the load lock chamber 00) and the manipulator 00 having the configuration of the example shown in FIG. ), the annular detector 0, and the optical microscope 0ω may be disposed on the side wall of the chamber (1) at positions with different angular phases so that their operations do not interfere with each other.

In addition, in the two embodiments described above, the sample mounting board is a turntable-type disc-shaped one, and the sample mounting board is rotated by a motor to sequentially analyze a large number of loaded samples. However, in this case, for example, as shown in FIG. 5a and FIG. 5S, which is a view taken along the line B-B in FIG. This multi-sample mounting board Q1 is moved in any direction of X-Y using a high-precision goniometer at+ equipped with computer-controlled X and Y moving means (24a) and (24b) instead of a motor. It is also possible to do this. In the case of this example, a plurality of sample holders (23a) holding samples (5) are arranged on the multi-sample mounting board Q1 in a grid pattern or a staggered pattern as shown in Figure 4. Therefore, a multi-test l-1 mounting board (2 hot water and chamber (+1) can be made into a compact configuration.

[Effects of the Invention] As described above, the sample chamber of the ion beam analyzer according to the present invention introduces various ion beams with different characteristics along the same beam irradiation axis, and selects these ion beams. The ion beam analyzer using the ion beam analyzer can efficiently perform a wide variety of analyzes over a wide range, and can be made compact and inexpensive while being compatible with multipurpose analyses.

[Brief explanation of drawings]

278- Fig. 1 is a top floor view showing the configuration and arrangement example of an embodiment of a sample chamber according to the present invention, and Figs. 2 and 3 are explanations of the operation of the sample chamber of the embodiment shown in Fig. 1. Figure 4a is a top floor view showing the configuration of another embodiment of the sample chamber according to the present invention; Figure 4 is a sectional view taken along line A-A in Figure 4a; Figure 5a is the invention FIG. 5 is a view taken along arrow B-8 in FIG. 5a, FIG. 6 is a configuration diagram of a conventional ion analyzer, and FIG. FIG. 2 is a perspective view showing the configuration and arrangement of a conventional multipurpose ion analysis equipment. (1)-Chamber, (2)-Beam introduction port, (3)-Multi-sample loading board, (4)-Motor, (5)-Sample, (6)-Detector, (7)-Goniometer, Sample! ! holder, sample, detector, loadronic chamber, gate valve, manipulator, cylinder mechanism, annular detector, cylinder, optical microscope, slide mechanism, electrostatic accelerator, objective collimator, Wien mass spectrometer, single ion selection Slit, quadrupole lens, ion beam, beam irradiation axis vA2

Claims (5)

[Claims] (1) In the sample chamber of an ion beam analyzer, which irradiates a sample placed inside with an ion beam and analyzes the sample using the Rutherford backscattering method or particle-excited X-ray spectroscopy, a large or small diameter ion beam is used. It has a beam introduction port that selectively introduces the same beam along the same beam irradiation axis, and is equipped with a plurality of samples to be analyzed by a large diameter ion beam, and one of these samples is selectively introduced along the same beam irradiation axis. a multi-sample positioning device capable of positioning on the irradiation axis; a multi-sample positioning device capable of moving forward and backward with respect to a position intersecting the beam irradiation axis between the multi-sample positioning device and the beam introduction port; 1. A sample chamber of an ion beam analyzer, characterized in that the sample chamber is loaded with a sample to be analyzed by a beam, and includes a goniometer that can position the sample with high accuracy on the beam irradiation axis. (2) The sample chamber of the ion beam analyzer according to claim 1, further comprising an annular detector for detecting scattered ions arranged on the beam irradiation axis between the goniometer and the beam introduction port. (3) The annular detector is provided so as to be retractable from the beam irradiation axis, and is equipped with a detection section of a microscope, and has a moving mechanism that brings the detection section of the microscope close to the sample mounted on the goniometer. 3. The sample chamber of an ion beam analyzer according to claim 2. (4) a load-lock chamber that is provided in communication with the sample chamber and whose interior can be degassed independently of the sample chamber; and a gate valve that is interposed between the load-lock chamber and the sample chamber; Claim 1, further comprising a sample attachment/detachment mechanism capable of holding a sample for analysis using a small-diameter ion beam and moving the sample between the load-lock chamber and the goniometer, and capable of attaching and detaching the sample to the goniometer.
A sample chamber of an ion beam analyzer according to claim 3. (5) A claim characterized in that the goniometer is capable of mounting a sample for analysis using a large-diameter ion beam, and the sample mounting surface is tiltable about a point intersecting the beam irradiation axis. A sample chamber of an ion beam analyzer according to any one of claims 1 to 4.