WO2023061226A1 - Array substrate and display panel - Google Patents

Array substrate and display panel Download PDF

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Publication number
WO2023061226A1
WO2023061226A1 PCT/CN2022/122195 CN2022122195W WO2023061226A1 WO 2023061226 A1 WO2023061226 A1 WO 2023061226A1 CN 2022122195 W CN2022122195 W CN 2022122195W WO 2023061226 A1 WO2023061226 A1 WO 2023061226A1
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WO
WIPO (PCT)
Prior art keywords
electrode
layer
force
sensitive resistance
material layer
Prior art date
Application number
PCT/CN2022/122195
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French (fr)
Chinese (zh)
Inventor
唐榕
郑浩旋
Original Assignee
惠科股份有限公司
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Publication of WO2023061226A1 publication Critical patent/WO2023061226A1/en

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Classifications

    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1343Electrodes
    • G02F1/134309Electrodes characterised by their geometrical arrangement

Definitions

  • the present application relates to the field of display technology, and in particular to an array substrate and a display panel.
  • Trace Mura can be understood as a phenomenon of uneven brightness of scratches. It means that after scratching the surface of the display with a hard part, the display will follow the scratched position without damaging the surface film layer. There is mura (uneven brightness) phenomenon on the route, and the mura cannot disappear in a short time.
  • the principle of Trace Mura is that when the display panel is under pressure, the liquid crystal molecules with a large inclination at the pressure position are squeezed and rearranged, so that the light transmittance changes. When the pressure is removed, the force of the rearranged liquid crystal molecules in the electric field The bottom cannot return to the original position in a short time, which will affect the display effect and ultimately affect the product quality.
  • the purpose of the embodiments of the present application is to provide an array substrate and a display panel.
  • an array substrate including a substrate and a first electrode and a second electrode formed on the substrate, the first electrode is a pixel electrode, and the second electrode is a common electrode or a ground electrode An electrode, wherein the first electrode and the second electrode are connected by at least one layer of force-sensitive resistance material, and the force-sensitive resistance material layer changes from an insulator or a semiconductor to a conductor after extrusion.
  • the array substrate further includes:
  • a gate insulating layer formed on the substrate and covering the gate
  • the first electrode is located on the passivation layer, the second electrode is located between the substrate and the gate insulating layer, and a layer of the passivation layer is provided between the first electrode and the passivation layer.
  • the force-sensitive resistance material layer, a layer of the force-sensitive resistance material layer is provided between the second electrode and the gate insulating layer, and the first electrode is connected to the second electrode through a via hole.
  • the force sensitive resistive material layers are in contact.
  • the array substrate further includes:
  • a gate insulating layer formed on the substrate and covering the gate
  • the first electrode and the second electrode are on the same layer, and the second electrode is a common electrode; the first electrode and the second electrode are arranged on the flat layer at intervals, and the force-sensitive resistance material layer Covering the first electrode and the second electrode to connect the first electrode and the second electrode; or the force sensitive resistance material layer is arranged on the flat layer, the first electrode and the second electrode
  • the second electrodes are spaced on the force-sensitive resistance material layer, and are connected through the force-sensitive resistance material layer.
  • the material of the force-sensitive resistor material layer is selected from at least one of silicon semiconductors, conductive polymers, and organic insulating materials containing conductive materials.
  • the conductive polymer is selected from at least one of polythiophene polymers and polyaniline polymers.
  • the conductive material in the organic insulating material is selected from at least one of carbon nanotubes and graphene nanosheets.
  • the material of the force-sensitive resistance material layer is selected from organic insulating materials containing conductive materials, and the thickness of the force-sensitive resistance material layer is 200nm-1500nm.
  • the conductive material accounts for 40%-60% by volume of the force-sensitive resistance material layer.
  • the contact portion between the force-sensitive resistance material layer and the first electrode or the second electrode is provided with a conductive point-shaped material, and the tip of the point-shaped material faces toward the force-sensitive resistance material. layer.
  • a display panel including an array substrate, a color filter substrate disposed opposite to the array substrate, and a liquid crystal layer located between the array substrate and the color filter substrate, the array substrate includes a substrate Bottom and a first electrode and a second electrode formed on the substrate, the first electrode is a pixel electrode, and the second electrode is a common electrode or a ground electrode, wherein the first electrode and the The second electrodes are connected through at least one force-sensitive resistance material layer, and the force-sensitive resistance material layer changes from an insulator or a semiconductor to a conductor after extrusion.
  • the array substrate further includes:
  • a gate insulating layer formed on the substrate and covering the gate
  • the first electrode is located on the passivation layer, the second electrode is located between the substrate and the gate insulating layer, and a layer of the passivation layer is provided between the first electrode and the passivation layer.
  • the force-sensitive resistance material layer, a layer of the force-sensitive resistance material layer is provided between the second electrode and the gate insulating layer, and the first electrode is connected to the second electrode through a via hole.
  • the force sensitive resistive material layers are in contact.
  • the array substrate further includes:
  • a gate insulating layer formed on the substrate and covering the gate
  • the first electrode and the second electrode are on the same layer, and the second electrode is a common electrode; the first electrode and the second electrode are arranged on the flat layer at intervals, and the force-sensitive resistance material layer Covering the first electrode and the second electrode to connect the first electrode and the second electrode; or the force sensitive resistance material layer is arranged on the flat layer, the first electrode and the second electrode
  • the second electrodes are spaced on the force-sensitive resistance material layer, and are connected through the force-sensitive resistance material layer.
  • the material of the force-sensitive resistor material layer is selected from at least one of silicon semiconductors, conductive polymers, and organic insulating materials containing conductive materials.
  • the conductive polymer is selected from at least one of polythiophene polymers and polyaniline polymers.
  • the conductive material in the organic insulating material is selected from at least one of carbon nanotubes and graphene nanosheets.
  • the material of the force-sensitive resistance material layer is selected from organic insulating materials containing conductive materials, and the thickness of the force-sensitive resistance material layer is 200nm-1500nm.
  • the conductive material accounts for 40%-60% by volume of the force-sensitive resistance material layer.
  • the conductive material accounts for 45%-55% by volume of the force-sensitive resistance material layer.
  • the contact portion between the force-sensitive resistance material layer and the first electrode or the second electrode is provided with a conductive point-shaped material, and the tip of the point-shaped material faces toward the force-sensitive resistance material. layer.
  • the color filter substrate is provided with a black matrix, and the force-sensitive resistance material layer is disposed opposite to the black matrix.
  • the beneficial effect of the array substrate provided by the embodiment of the present application is that the array substrate is provided with at least one force-sensitive resistance material layer, and the force-sensitive resistance material layer connects the first electrode, which is the pixel electrode, and the second electrode, which is the common electrode or the ground electrode.
  • the resistance value of the force-sensitive resistance material layer decreases with the increase of external force, and when there is no external force, the force-sensitive resistance material layer is an insulator or semiconductor, which does not affect the display effect, because the force-sensitive resistance material layer connects the first electrode and the The second electrode, therefore, the resistance of the force-sensitive resistance material layer becomes smaller after being squeezed and can be changed from an insulator or a semiconductor to a conductor, and the conductive force-sensitive resistance material layer connects the first electrode and the second electrode in a short circuit, thereby avoiding pressure
  • the rearrangement of the liquid crystal molecules in the part can avoid the phenomenon of Trace Mura, and finally improve the quality of the product.
  • the beneficial effect of the display panel provided by the embodiment of the present application is that the display panel includes the unique array substrate of the present application, and the array substrate is provided with a unique force-sensitive resistance material layer to connect the first electrode and the second electrode, and the force-sensitive resistance material layer After extrusion, the resistance becomes smaller, and the insulator or semiconductor can be changed into a conductor, so that the first electrode and the second electrode are short-circuited and connected, which can avoid the rearrangement of liquid crystal molecules in the pressed part, thereby avoiding the Trace Mura phenomenon, and finally improving The product quality of the display panel.
  • FIG. 1 is a schematic structural view of an array substrate provided in the first embodiment of the present application.
  • FIG. 2 is another schematic structural view of the array substrate provided in the first embodiment of the present application.
  • FIG. 3 is a schematic structural diagram of an array substrate provided in a second embodiment of the present application.
  • FIG. 4 is a schematic structural diagram of an array substrate provided in a third embodiment of the present application.
  • FIG. 5 is a schematic structural diagram of a display panel provided by a fourth embodiment of the present application.
  • FIG. 6 is another schematic structural view of the display panel provided by the fourth embodiment of the present application.
  • the term "and/or” describes the association relationship of associated objects, indicating that there may be three relationships, for example, A and/or B may mean: A exists alone, A and B exist simultaneously, and B exists alone Condition. Among them, A and B can be singular or plural.
  • the character "/" generally indicates that the contextual objects are an "or" relationship.
  • At least one means one or more, and “multiple” means two or more. “At least one of the following” or similar expressions refer to any combination of these items, including any combination of single or plural items.
  • sequence numbers of the above-mentioned processes do not mean the order of execution, and some or all steps may be executed in parallel or sequentially, and the execution order of each process shall be based on its functions and The internal logic is determined and should not constitute any limitation to the implementation process of the embodiment of the present application.
  • first and second are only used for descriptive purposes to distinguish objects such as substances from each other, and cannot be understood as indicating or implying relative importance or implicitly specifying the quantity of indicated technical features.
  • first XX can also be called the second XX
  • second XX can also be called the first XX.
  • a feature defined as “first” and “second” may explicitly or implicitly include one or more of these features.
  • the array substrate includes:
  • the first electrode 11 is formed on the substrate 10;
  • the second electrode 12 is formed on the substrate 10;
  • the first electrode 11 is a pixel electrode
  • the second electrode 12 is a common electrode or a ground electrode
  • the first electrode 11 and the second electrode 12 are connected through at least one layer of force-sensitive resistance material layer 13, and the force-sensitive resistance material layer 13 changes from an insulator or a semiconductor to a conductor after extrusion.
  • the array substrate provided in this embodiment is provided with at least one layer of force-sensitive resistance material layer 13, and the force-sensitive resistance material layer 13 connects the first electrode 11, that is, the pixel electrode, and the second electrode 12, that is, the common electrode or the ground electrode.
  • the resistance value of the sensitive resistance material layer 13 decreases with the increase of external force.
  • the force sensitive resistance material layer 13 When there is no external force, the force sensitive resistance material layer 13 is an insulator or semiconductor, which does not affect the display effect, because the force sensitive resistance material layer 13 is connected to the first electrode and The second electrode, therefore, when the force-sensitive resistance material layer 13 is extruded, the resistance becomes smaller and can be changed from an insulator or a semiconductor to a conductor, and the conductive force-sensitive resistance material layer 13 connects the first electrode 11 and the second electrode 12 by short-circuiting, Thereby, the high voltage difference between the first electrode 11 and the second electrode 12 at the pressed position can be eliminated, and liquid crystal molecule rearrangement at the pressed position can be avoided, so that Trace Mura phenomenon can be avoided, and the quality of the product can be finally improved.
  • the first electrode 11 and the second electrode 12 may be on the same layer, located on the same side of the force-sensitive resistance material layer 13, and the force-sensitive resistance material layer 13 may be located on the first electrode 11 and the second electrode 12, 13 It can also be located under the first electrode 11 and the second electrode 12; as shown in FIG. , at this time the second electrode 12 may be a common electrode.
  • the first electrode 11 and the second electrode 12 can be in different layers, respectively located on both sides of the force-sensitive resistance material layer 13, as shown in Figure 2, the force-sensitive resistance material layer 13 is between the first electrode 11 and the second electrode 12
  • the first electrode 11 and the second electrode 12 are connected, and the second electrode 12 may be a common electrode or a ground electrode.
  • the array substrate provided in this embodiment is an array substrate used for liquid crystal display panels.
  • the material of the force-sensitive resistance material layer 13 on the array substrate has force-sensitive resistance properties, and its resistance value changes with the change of external force.
  • the resistance of the force-sensitive resistor material decreases as the force increases, and the external force makes the force-sensitive resistor material layer 13 change from a non-conductive insulator or semiconductor to a conductor, so that the first electrode will 11 is in communication with the second electrode 12, so as to avoid rearrangement of the liquid crystal molecules at the pressing part of the display panel, avoid Trace Mura, and improve product quality.
  • the force or pressure mentioned in this application generally refers to the external force that can generate Mura at present, and there is a corresponding threshold.
  • the force-sensitive resistor material layer 13 in the array substrate of the embodiment of the present application is a non-conductive insulator or semiconductor; when the external force is greater than or equal to the threshold, the force-sensitive resistor The material layer 13 changes from an insulator or a semiconductor to a conductor, and when the external force is removed again, it will be insulated again; this will not affect the display effect of the display panel in normal use, and can avoid the Trace Mura phenomenon.
  • the material of the force-sensitive resistance material layer 13 on the array substrate is selected from at least one of silicon semiconductors, conductive polymers, and organic insulating materials containing conductive materials.
  • the conductive polymer is a polymer formed by chemical polymerization of conductive monomers and some resinous monomers, specifically at least one selected from polythiophene polymers and polyaniline polymers.
  • the above-mentioned silicon semiconductor and conductive polymer have force-sensitive resistance properties. After the force-sensitive resistance material layer 13 of this application is made, it will not conduct electricity when it is not squeezed, and it will become a conductor when it receives an external force of a certain threshold.
  • the conductive material is selected from at least one of carbon nanotubes and graphene nanosheets, and the graphene nanosheets and carbon nanotubes are dispersed in the organic insulating material.
  • the organic insulating material may be polytetrafluoroethylene, silicone rubber, acrylic resin, and the like. It is an insulator when it is not extruded, and when the force-sensitive resistor material layer 13 acts on a certain threshold of external force, the conductive material parts therein contact each other so that the force-sensitive resistor material layer 13 changes from an insulator to a conductor.
  • the thickness of the force sensitive resistance material layer 13 is 200nm-1500nm.
  • the size of the dispersed carbon nanotubes may be 2nm ⁇ 100nm ⁇ 100nm ⁇ 1 ⁇ m, and the size of the graphene nanosheets may be 2nm ⁇ 200nm ⁇ 20nm ⁇ 1 ⁇ m.
  • the force-sensitive resistance material layer 13 with a thickness of 200nm-1500nm is more likely to conduct electricity after a certain threshold of external force acts on it.
  • the conductive material (such as carbon nanotubes or graphene nanosheets) in the force-sensitive resistance material layer 13 accounts for 40% to 60% by volume of the force-sensitive resistance material layer 13, and further accounts for 45% to 60% by volume. 55%. Under the above-mentioned volume ratio conditions, the force-sensitive resistance material layer 13 can better realize the contact of the conductive material under pressure, so as to become a conductor. It should be noted that the nanoscale material mentioned in this application may refer to a material with a size between 1 nm and 1000 nm.
  • the contact portion between the force-sensitive resistor material layer 13 and the first electrode 11 is provided with a conductive tip structure, and the tip of the tip structure faces the force-sensitive resistor material layer 13 .
  • the contact portion between the force-sensitive resistor material layer 13 and the second electrode 12 is conductively provided with a conductive tip structure, and the tip of the tip structure faces the force-sensitive resistor material layer 13 .
  • the tip structure is a layer of conductive tip-shaped material, which is arranged between the force-sensitive resistor material layer 13 and the first electrode 11 or the second electrode 12 , and the tip of the tip structure faces the force-sensitive resistor material layer 13 .
  • the conductive material When the force-sensitive resistance material layer 13 is pressed by an external force, the conductive material is at least partially in contact with each other so that the force-sensitive resistance material layer 13 is changed from an insulator to a conductor, and the tip structure can pierce the surface of the force-sensitive resistance material layer 13 at the same time.
  • the contact conduction can further increase the conductivity between the force-sensitive resistance material layer 13 and the first electrode 11 or the second electrode 12 .
  • This embodiment provides an array substrate, as shown in Figure 3, the array substrate also includes:
  • the source and drain electrodes 17 are formed on the active layer 16;
  • the first electrode 11 and the second electrode 12 have different layers, the first electrode 11 is located on the passivation layer 18, the second electrode 12 is located between the substrate 10 and the gate insulating layer 15, and between the first electrode 11 and the passivation layer 18 A layer of force-sensitive resistance material layer 13 is provided between them, and a layer of force-sensitive resistance material layer 13 is provided between the second electrode 12 and the gate insulating layer 15.
  • the resistive material layer 13 is in contact.
  • the first electrode 11 is a pixel electrode
  • the force-sensitive resistance material layer 13 on the passivation layer 18 can connect the sub-pixel electrodes
  • the second electrode 12 is a common electrode or an electrode to ground, and the force-sensitive resistance on the second electrode 12
  • the material layer 13 can communicate with the first electrode 11 and the second electrode 12 , so that each sub-pixel electrode can communicate with the second electrode 12 .
  • the force-sensitive resistive material layer 13 When the force-sensitive resistive material layer 13 is subjected to an external force of a certain threshold, it becomes a conductor, and the conductive force-sensitive resistive material layer 13 connects the first electrode 11 and the second electrode 12, so that the extrusion position connects the pixel electrode and the common electrode or The ground electrode is short-circuited to eliminate the high pressure difference between the two electrodes at the squeezed position, so that more pixel unit areas can avoid the rearrangement of liquid crystal molecules at the pressed position, avoid the Trace Mura phenomenon, and ultimately improve the quality of the product.
  • the material and thickness options of the force sensitive resistance material layer 13 of the first embodiment can be used in the array substrate shown in FIG. 3 .
  • the array substrate provided in this embodiment is a COA (Color Filter On Array) substrate, and the color-resist layer is integrated and manufactured on one side of the array substrate.
  • the array substrate also includes:
  • the source and drain electrodes 17 are formed on the active layer 16;
  • the color resist layer 19 is formed on the passivation layer 18;
  • the first electrode 11 and the second electrode 12 are on the same layer, the first electrode 11 is a pixel electrode, and the second electrode 12 is a common electrode; the first electrode 11 and the second electrode 12 are arranged on the flat layer 20 at intervals, and the force-sensitive resistance material layer 13 covers the first electrode 11 and the second electrode 12 to connect the first electrode 11 and the second electrode 12 .
  • Such a structure is not only beneficial to the preparation of the force-sensitive resistance material layer 13, and the process is simple, but also becomes a conductor when the force-sensitive resistance material layer 13 is subjected to an external force of a certain threshold value, and the conductive force-sensitive resistance material layer 13 connects the first electrode 11 with the first electrode 11.
  • the second electrode 12 is connected and conducted, so that the squeezed position short-circuits the pixel electrode and the common electrode, thereby avoiding rearrangement of liquid crystal molecules at the pressed position, avoiding Trace Mura phenomenon, and finally improving the quality of the product.
  • the material and thickness options of the force sensitive resistance material layer 13 of the first embodiment can be used in the array substrate shown in FIG. 4 .
  • the force-sensitive resistance material layer 13 can also be disposed on the planar layer 20 , while the first electrode 11 and the second electrode 12 are spaced apart on the force-sensitive resistance material layer 13 , and the connection is realized through the force-sensitive resistance material layer 13 .
  • the display panel includes: an array substrate, a color filter substrate 40 disposed opposite to the array substrate, and a liquid crystal layer located between the array substrate and the color filter substrate 40 30.
  • the array substrate includes: a substrate 10, a first electrode 11 and a second electrode 12 formed on the substrate 10; the first electrode 11 is a pixel electrode, and the second electrode 12 is a common electrode or a ground electrode; The first electrode 11 and the second electrode 12 are connected through at least one layer of force-sensitive resistance material layer 13, and the force-sensitive resistance material layer 13 changes from an insulator or a semiconductor to a conductor after extrusion.
  • first electrode 11 and the second electrode 12 can be in the same layer, located on the same side of the force-sensitive resistance material layer 13, as shown in Figure 5; of course, the first electrode 11 and the second electrode 12 can be in different layers, respectively located in the force-sensitive resistance material layer 13.
  • the two sides of the sensitive resistive material layer 13 are shown in FIG. 6 .
  • the display panel provided in this embodiment includes the unique array substrate of the embodiment of the present application, the array substrate is provided with a unique force-sensitive resistance material layer 13 to connect the first electrode 11 and the second electrode 12, and the force-sensitive resistance material layer 13 is squeezed After the resistance becomes smaller, the insulator or semiconductor can be changed into a conductor, so that the first electrode 11 and the second electrode 12 are short-circuited, so that the rearrangement of the liquid crystal molecules 31 in the liquid crystal layer 30 at the pressured part can be avoided, thereby avoiding Trace The Mura phenomenon ultimately improves the product quality of the display panel.
  • the color filter substrate 40 of the display panel is provided with a black matrix 41 , and the force sensitive resistance material layer is arranged opposite to the black matrix 41 .
  • the force-sensitive resistance material is generally a transparent material, and the light-shielding effect is small.
  • the force-sensitive resistance material layer 13 is set opposite to the black matrix 41, which can further reduce the light-shielding effect, so that the display panel has a better display effect. .
  • the display panel provided in the embodiment of the present application can be provided with the array substrates provided in the first embodiment, the second embodiment, and the third embodiment, therefore, the optional schemes of the above array substrates can all be used in this
  • the display panel has all the advantages of the array substrate provided by the above embodiments, which will not be repeated here.

Abstract

The present application discloses an array substrate and a display panel. The array substrate comprises: a substrate and a first electrode and a second electrode formed on the substrate, the first electrode being a pixel electrode, and the second electrode being a common electrode or a ground electrode; the first electrode and the second electrode are connected by means of at least one force-sensitive resistive material layer, and the force-sensitive resistive material layer is changed from an insulator or a semiconductor to a conductor after being extruded. The force-sensitive resistive material layer in the array substrate is changed from the insulator or the semiconductor to the conductor after being extruded, and the conductive force-sensitive resistive material layer enables the first electrode and the second electrode to be in short-circuit connection. In this way, liquid crystal molecules at a pressed part can be prevented from being rearranged, thereby avoiding the phenomenon of uneven brightness caused by scratches, and finally improving the product quality.

Description

阵列基板和显示面板Array substrate and display panel
本申请要求于2021年10月15日在中国专利局提交的、申请号为202111200792.3、申请名称为“阵列基板和显示面板”的中国专利申请的优先权,其全部内容通过引用结合在本申请中。This application claims priority to a Chinese patent application with application number 202111200792.3 and application title "Array Substrate and Display Panel" filed at the China Patent Office on October 15, 2021, the entire contents of which are incorporated herein by reference .
技术领域technical field
本申请涉及显示技术领域,尤其涉及一种阵列基板和显示面板。The present application relates to the field of display technology, and in particular to an array substrate and a display panel.
背景技术Background technique
Trace Mura(压痕)可以理解为一种刮痕亮度不均现象,是指用硬质部件在显示器表面划刮后,在不破坏表面膜层的前提下,显示器上会沿着划刮位置的路线出现Mura(亮度不均)的现象,并且在短时间内Mura无法消失。Trace Mura产生的原理是当显示面板受到压力时,受压位置倾角较大的液晶分子挤压重新排列,使光透过率发生变化,当压力撤销后,重新排列的液晶分子在电场的作用力下无法在短时间内回到原始的位置,从而影响显示效果,最终会影响产品品质。Trace Mura (indentation) can be understood as a phenomenon of uneven brightness of scratches. It means that after scratching the surface of the display with a hard part, the display will follow the scratched position without damaging the surface film layer. There is mura (uneven brightness) phenomenon on the route, and the mura cannot disappear in a short time. The principle of Trace Mura is that when the display panel is under pressure, the liquid crystal molecules with a large inclination at the pressure position are squeezed and rearranged, so that the light transmittance changes. When the pressure is removed, the force of the rearranged liquid crystal molecules in the electric field The bottom cannot return to the original position in a short time, which will affect the display effect and ultimately affect the product quality.
技术问题technical problem
本申请实施例的目的在于提供一种阵列基板和显示面板。The purpose of the embodiments of the present application is to provide an array substrate and a display panel.
技术解决方案technical solution
本申请实施例采用的技术方案是:The technical scheme that the embodiment of the present application adopts is:
第一方面,提供一种阵列基板,包括衬底和形成于所述衬底上的第一电极和第二电极,所述第一电极为像素电极,所述第二电极为公共电极或对地电极,其中,所述第一电极和所述第二电极通过至少一层力敏电阻材料层相连接,所述力敏电阻材料层挤压后由绝缘体或半导体变成导体。In a first aspect, an array substrate is provided, including a substrate and a first electrode and a second electrode formed on the substrate, the first electrode is a pixel electrode, and the second electrode is a common electrode or a ground electrode An electrode, wherein the first electrode and the second electrode are connected by at least one layer of force-sensitive resistance material, and the force-sensitive resistance material layer changes from an insulator or a semiconductor to a conductor after extrusion.
在一个实施例中,所述阵列基板还包括:In one embodiment, the array substrate further includes:
栅极,形成于所述衬底上;a gate formed on the substrate;
栅极绝缘层,形成于所述衬底上并覆盖所述栅极;a gate insulating layer formed on the substrate and covering the gate;
有源层,形成于所述栅极绝缘层上;an active layer formed on the gate insulating layer;
源漏极,形成于所述有源层上;source and drain electrodes formed on the active layer;
钝化层,形成于所述源漏极上;a passivation layer formed on the source and drain;
所述第一电极位于所述钝化层上,所述第二电极位于所述衬底和所述栅极绝缘层之间,所述第一电极与所述钝化层之间设有一层所述力敏电阻材料层,所述第二电极与所述栅极绝缘层之间设有一层所述力敏电阻材料层,所述第一电极通过过孔与所述第二电极上的所述力敏电阻材料层相接触。The first electrode is located on the passivation layer, the second electrode is located between the substrate and the gate insulating layer, and a layer of the passivation layer is provided between the first electrode and the passivation layer. The force-sensitive resistance material layer, a layer of the force-sensitive resistance material layer is provided between the second electrode and the gate insulating layer, and the first electrode is connected to the second electrode through a via hole. The force sensitive resistive material layers are in contact.
在一个实施例中,所述阵列基板还包括:In one embodiment, the array substrate further includes:
栅极,形成于所述衬底上;a gate formed on the substrate;
栅极绝缘层,形成于所述衬底上并覆盖所述栅极;a gate insulating layer formed on the substrate and covering the gate;
有源层,形成于所述栅极绝缘层上;an active layer formed on the gate insulating layer;
源漏极,形成于所述有源层上;source and drain electrodes formed on the active layer;
钝化层,形成于所述源漏极上;a passivation layer formed on the source and drain;
色阻层,形成于所述钝化层上;a color resist layer formed on the passivation layer;
平坦层,形成于所述色阻层上;a flat layer formed on the color resist layer;
所述第一电极和所述第二电极同层,所述第二电极为公共电极;所述第一电极和所述第二电极间隔设置在所述平坦层上,所述力敏电阻材料层覆盖所述第一电极和所述第二电极,以将所述第一电极和所述第二电极连接;或者所述力敏电阻材料层设置在所述平坦层上,所述第一电极和所述第二电极间隔设置在所述力敏电阻材料层上,通过所述力敏电阻材料层实现连接。The first electrode and the second electrode are on the same layer, and the second electrode is a common electrode; the first electrode and the second electrode are arranged on the flat layer at intervals, and the force-sensitive resistance material layer Covering the first electrode and the second electrode to connect the first electrode and the second electrode; or the force sensitive resistance material layer is arranged on the flat layer, the first electrode and the second electrode The second electrodes are spaced on the force-sensitive resistance material layer, and are connected through the force-sensitive resistance material layer.
在一个实施例中,所述力敏电阻材料层的材料选自硅半导体、导电聚合物、含导电材料的有机绝缘材料中的至少一种。In one embodiment, the material of the force-sensitive resistor material layer is selected from at least one of silicon semiconductors, conductive polymers, and organic insulating materials containing conductive materials.
在一个实施例中,所述导电聚合物选自聚噻吩类聚合物和聚苯胺类聚合物中的至少一种。In one embodiment, the conductive polymer is selected from at least one of polythiophene polymers and polyaniline polymers.
在一个实施例中,所述有机绝缘材料中的所述导电材料选自碳纳米管和石墨烯纳米片的至少一种。In one embodiment, the conductive material in the organic insulating material is selected from at least one of carbon nanotubes and graphene nanosheets.
在一个实施例中,所述力敏电阻材料层的材料选自含导电材料的有机绝缘材料,所述力敏电阻材料层厚度为200nm~1500nm。In one embodiment, the material of the force-sensitive resistance material layer is selected from organic insulating materials containing conductive materials, and the thickness of the force-sensitive resistance material layer is 200nm-1500nm.
在一个实施例中,所述导电材料占所述力敏电阻材料层的体积百分比为40%~60%。In one embodiment, the conductive material accounts for 40%-60% by volume of the force-sensitive resistance material layer.
在一个实施例中,所述力敏电阻材料层与所述第一电极或所述第二电极的接触部分设有导电的尖端状材料,所述尖端状材料的尖端朝向所述力敏电阻材料层。In one embodiment, the contact portion between the force-sensitive resistance material layer and the first electrode or the second electrode is provided with a conductive point-shaped material, and the tip of the point-shaped material faces toward the force-sensitive resistance material. layer.
第二方面,提供一种显示面板,包括阵列基板、与所述阵列基板相对设置的彩膜基板,以及位于所述阵列基板和所述彩膜基板之间的液晶层,所述阵列基板包括衬底和形成于所述衬底上的第一电极和第二电极,所述第一电极为像素电极,所述第二电极为公共电极或对地电极,其中,所述第一电极和所述第二电极通过至少一层力敏电阻材料层相连接,所述力敏电阻材料层挤压后由绝缘体或半导体变成导体。In a second aspect, a display panel is provided, including an array substrate, a color filter substrate disposed opposite to the array substrate, and a liquid crystal layer located between the array substrate and the color filter substrate, the array substrate includes a substrate Bottom and a first electrode and a second electrode formed on the substrate, the first electrode is a pixel electrode, and the second electrode is a common electrode or a ground electrode, wherein the first electrode and the The second electrodes are connected through at least one force-sensitive resistance material layer, and the force-sensitive resistance material layer changes from an insulator or a semiconductor to a conductor after extrusion.
在一个实施例中,所述阵列基板还包括:In one embodiment, the array substrate further includes:
栅极,形成于所述衬底上;a gate formed on the substrate;
栅极绝缘层,形成于所述衬底上并覆盖所述栅极;a gate insulating layer formed on the substrate and covering the gate;
有源层,形成于所述栅极绝缘层上;an active layer formed on the gate insulating layer;
源漏极,形成于所述有源层上;source and drain electrodes formed on the active layer;
钝化层,形成于所述源漏极上;a passivation layer formed on the source and drain;
所述第一电极位于所述钝化层上,所述第二电极位于所述衬底和所述栅极绝缘层之间,所述第一电极与所述钝化层之间设有一层所述力敏电阻材料层,所述第二电极与所述栅极绝缘层之间设有一层所述力敏电阻材料层,所述第一电极通过过孔与所述第二电极上的所述力敏电阻材料层相接触。The first electrode is located on the passivation layer, the second electrode is located between the substrate and the gate insulating layer, and a layer of the passivation layer is provided between the first electrode and the passivation layer. The force-sensitive resistance material layer, a layer of the force-sensitive resistance material layer is provided between the second electrode and the gate insulating layer, and the first electrode is connected to the second electrode through a via hole. The force sensitive resistive material layers are in contact.
在一个实施例中,所述阵列基板还包括:In one embodiment, the array substrate further includes:
栅极,形成于所述衬底上;a gate formed on the substrate;
栅极绝缘层,形成于所述衬底上并覆盖所述栅极;a gate insulating layer formed on the substrate and covering the gate;
有源层,形成于所述栅极绝缘层上;an active layer formed on the gate insulating layer;
源漏极,形成于所述有源层上;source and drain electrodes formed on the active layer;
钝化层,形成于所述源漏极上;a passivation layer formed on the source and drain;
色阻层,形成于所述钝化层上;a color resist layer formed on the passivation layer;
平坦层,形成于所述色阻层上;a flat layer formed on the color resist layer;
所述第一电极和所述第二电极同层,所述第二电极为公共电极;所述第一电极和所述第二电极间隔设置在所述平坦层上,所述力敏电阻材料层覆盖所述第一电极和所述第二电极,以将所述第一电极和所述第二电极连接;或者所述力敏电阻材料层设置在所述平坦层上,所述第一电极和所述第二电极间隔设置在所述力敏电阻材料层上,通过所述力敏电阻材料层实现连接。The first electrode and the second electrode are on the same layer, and the second electrode is a common electrode; the first electrode and the second electrode are arranged on the flat layer at intervals, and the force-sensitive resistance material layer Covering the first electrode and the second electrode to connect the first electrode and the second electrode; or the force sensitive resistance material layer is arranged on the flat layer, the first electrode and the second electrode The second electrodes are spaced on the force-sensitive resistance material layer, and are connected through the force-sensitive resistance material layer.
在一个实施例中,所述力敏电阻材料层的材料选自硅半导体、导电聚合物、含导电材料的有机绝缘材料中的至少一种。In one embodiment, the material of the force-sensitive resistor material layer is selected from at least one of silicon semiconductors, conductive polymers, and organic insulating materials containing conductive materials.
在一个实施例中,所述导电聚合物选自聚噻吩类聚合物和聚苯胺类聚合物中的至少一种。In one embodiment, the conductive polymer is selected from at least one of polythiophene polymers and polyaniline polymers.
在一个实施例中,所述有机绝缘材料中的所述导电材料选自碳纳米管和石墨烯纳米片的至少一种。In one embodiment, the conductive material in the organic insulating material is selected from at least one of carbon nanotubes and graphene nanosheets.
在一个实施例中,所述力敏电阻材料层的材料选自含导电材料的有机绝缘材料,所述力敏电阻材料层厚度为200nm~1500nm。In one embodiment, the material of the force-sensitive resistance material layer is selected from organic insulating materials containing conductive materials, and the thickness of the force-sensitive resistance material layer is 200nm-1500nm.
在一个实施例中,所述导电材料占所述力敏电阻材料层的体积百分比为40%~60%。In one embodiment, the conductive material accounts for 40%-60% by volume of the force-sensitive resistance material layer.
在一个实施例中,所述导电材料占所述力敏电阻材料层的体积百分比为45%~55%。In one embodiment, the conductive material accounts for 45%-55% by volume of the force-sensitive resistance material layer.
在一个实施例中,所述力敏电阻材料层与所述第一电极或所述第二电极的接触部分设有导电的尖端状材料,所述尖端状材料的尖端朝向所述力敏电阻材料层。In one embodiment, the contact portion between the force-sensitive resistance material layer and the first electrode or the second electrode is provided with a conductive point-shaped material, and the tip of the point-shaped material faces toward the force-sensitive resistance material. layer.
在一个实施例中,所述彩膜基板设有黑色矩阵,所述力敏电阻材料层与所述黑色矩阵相对设置。In one embodiment, the color filter substrate is provided with a black matrix, and the force-sensitive resistance material layer is disposed opposite to the black matrix.
有益效果Beneficial effect
本申请实施例提供的阵列基板有益效果在于该阵列基板设有至少一层力敏电阻材料层,该力敏电阻材料层将第一电极即像素电极和第二电极即公共电极或对地电极相连接,力敏电阻材料层的电阻值随外力增大而减小,未有外力时,该力敏电阻材料层是绝缘体或半导体,不影响显示效果,因力敏电阻材料层连接第一电极和第二电极,因此,力敏电阻材料层挤压后电阻变小可以由绝缘体或半导体变成导体,导电的力敏电阻材料层将第一电极与第二电极短接连通,从而可以避免受压部位的液晶分子重排,从而可以避免产生Trace Mura现象,最终提升该产品品质。The beneficial effect of the array substrate provided by the embodiment of the present application is that the array substrate is provided with at least one force-sensitive resistance material layer, and the force-sensitive resistance material layer connects the first electrode, which is the pixel electrode, and the second electrode, which is the common electrode or the ground electrode. connection, the resistance value of the force-sensitive resistance material layer decreases with the increase of external force, and when there is no external force, the force-sensitive resistance material layer is an insulator or semiconductor, which does not affect the display effect, because the force-sensitive resistance material layer connects the first electrode and the The second electrode, therefore, the resistance of the force-sensitive resistance material layer becomes smaller after being squeezed and can be changed from an insulator or a semiconductor to a conductor, and the conductive force-sensitive resistance material layer connects the first electrode and the second electrode in a short circuit, thereby avoiding pressure The rearrangement of the liquid crystal molecules in the part can avoid the phenomenon of Trace Mura, and finally improve the quality of the product.
本申请实施例提供的显示面板的有益效果在于该显示面板包括本申请特有的阵列基板,该阵列基板设有特有的力敏电阻材料层将第一电极和第二电极连接,力敏电阻材料层挤压后电阻变小可以由绝缘体或半导体变成导体,从而使第一电极与第二电极短接连通,这样可以避免受压部位的液晶分子重排,从而可以避免产生Trace Mura现象,最终提升该显示面板的产品品质。The beneficial effect of the display panel provided by the embodiment of the present application is that the display panel includes the unique array substrate of the present application, and the array substrate is provided with a unique force-sensitive resistance material layer to connect the first electrode and the second electrode, and the force-sensitive resistance material layer After extrusion, the resistance becomes smaller, and the insulator or semiconductor can be changed into a conductor, so that the first electrode and the second electrode are short-circuited and connected, which can avoid the rearrangement of liquid crystal molecules in the pressed part, thereby avoiding the Trace Mura phenomenon, and finally improving The product quality of the display panel.
附图说明Description of drawings
为了更清楚地说明本申请实施例中的技术方案,下面将对实施例或示范性技术描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本申请的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其它的附图。In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following will briefly introduce the accompanying drawings that need to be used in the embodiments or exemplary technical descriptions. Obviously, the accompanying drawings in the following descriptions are only for this application. For some embodiments, those skilled in the art can also obtain other drawings based on these drawings without creative efforts.
图1是本申请第一实施例提供的阵列基板的一种结构示意图;FIG. 1 is a schematic structural view of an array substrate provided in the first embodiment of the present application;
图2是本申请第一实施例提供的阵列基板的另一种结构示意图;FIG. 2 is another schematic structural view of the array substrate provided in the first embodiment of the present application;
图3是本申请第二实施例提供的阵列基板的结构示意图;FIG. 3 is a schematic structural diagram of an array substrate provided in a second embodiment of the present application;
图4是本申请第三实施例提供的阵列基板的结构示意图;FIG. 4 is a schematic structural diagram of an array substrate provided in a third embodiment of the present application;
图5是本申请第四实施例提供的显示面板的一种结构示意图;FIG. 5 is a schematic structural diagram of a display panel provided by a fourth embodiment of the present application;
图6是本申请第四实施例提供的显示面板的另一种结构示意图;FIG. 6 is another schematic structural view of the display panel provided by the fourth embodiment of the present application;
其中,图中各附图标记:Wherein, each reference sign in the figure:
10-衬底,11-第一电极,12-第二电极,13-力敏电阻材料层,14-栅极,15-栅极绝缘层,16-有源层,17-源漏极,18-钝化层,19-色阻层,20-平坦层,21-过孔,30-液晶层,31-液晶分子,40-彩膜基板,41-黑色矩阵。10-substrate, 11-first electrode, 12-second electrode, 13-force sensitive resistance material layer, 14-gate, 15-gate insulating layer, 16-active layer, 17-source and drain, 18 -passivation layer, 19-color resist layer, 20-planar layer, 21-via hole, 30-liquid crystal layer, 31-liquid crystal molecule, 40-color filter substrate, 41-black matrix.
本发明的实施方式Embodiments of the present invention
为了使本申请的目的、技术方案及优点更加清楚明白,以下结合附图及实施例,对本申请进行进一步详细说明。应当理解,此处所描述的具体实施例仅用以解释本申请,并不用于限定本申请。In order to make the purpose, technical solution and advantages of the present application clearer, the present application will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present application, not to limit the present application.
本申请中,术语“和/或”,描述关联对象的关联关系,表示可以存在三种关系,例如,A和/或B,可以表示:单独存在A,同时存在A和B,单独存在B的情况。其中A,B可以是单数或者复数。字符“/”一般表示前后关联对象是一种“或”的关系。In this application, the term "and/or" describes the association relationship of associated objects, indicating that there may be three relationships, for example, A and/or B may mean: A exists alone, A and B exist simultaneously, and B exists alone Condition. Among them, A and B can be singular or plural. The character "/" generally indicates that the contextual objects are an "or" relationship.
本申请中,“至少一种”是指一种或者多种,“多种”是指两种或两种以上。“以下至少一项(个)”或其类似表达,是指的这些项中的任意组合,包括单项(个)或复数项(个)的任意组合。In the present application, "at least one" means one or more, and "multiple" means two or more. "At least one of the following" or similar expressions refer to any combination of these items, including any combination of single or plural items.
应理解,在本申请的各种实施例中,上述各过程的序号的大小并不意味着执行顺序的先后,部分或全部步骤可以并行执行或先后执行,各过程的执行顺序应以其功能和内在逻辑确定,而不应对本申请实施例的实施过程构成任何限定。It should be understood that in various embodiments of the present application, the sequence numbers of the above-mentioned processes do not mean the order of execution, and some or all steps may be executed in parallel or sequentially, and the execution order of each process shall be based on its functions and The internal logic is determined and should not constitute any limitation to the implementation process of the embodiment of the present application.
在本申请实施例中使用的术语是仅仅出于描述特定实施例的目的,而非旨在限制本申请。在本申请实施例和所附权利要求书中所使用的单数形式的“一种”、“所述”和“该”也旨在包括多数形式,除非上下文清楚地表示其他含义。Terms used in the embodiments of the present application are only for the purpose of describing specific embodiments, and are not intended to limit the present application. The singular forms "a", "said" and "the" used in the embodiments of this application and the appended claims are also intended to include plural forms unless the context clearly indicates otherwise.
术语“第一”、“第二”仅用于描述目的,用来将目的如物质彼此区分开,而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。例如,在不脱离本申请实施例范围的情况下,第一XX也可以被称为第二XX,类似地,第二XX也可以被称为第一XX。由此,限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个该特征。The terms "first" and "second" are only used for descriptive purposes to distinguish objects such as substances from each other, and cannot be understood as indicating or implying relative importance or implicitly specifying the quantity of indicated technical features. For example, without departing from the scope of the embodiments of the present application, the first XX can also be called the second XX, and similarly, the second XX can also be called the first XX. Thus, a feature defined as "first" and "second" may explicitly or implicitly include one or more of these features.
第一实施例:First embodiment:
本实施例提供一种阵列基板,如图1和图2所示,该阵列基板包括:This embodiment provides an array substrate, as shown in Figure 1 and Figure 2, the array substrate includes:
衬底10;Substrate 10;
第一电极11,形成于衬底10上;The first electrode 11 is formed on the substrate 10;
第二电极12,形成于衬底10上;The second electrode 12 is formed on the substrate 10;
第一电极11为像素电极,第二电极12为公共电极或对地电极;The first electrode 11 is a pixel electrode, and the second electrode 12 is a common electrode or a ground electrode;
第一电极11和第二电极12通过至少一层力敏电阻材料层13相连接,力敏电阻材料层13挤压后由绝缘体或半导体变成导体。The first electrode 11 and the second electrode 12 are connected through at least one layer of force-sensitive resistance material layer 13, and the force-sensitive resistance material layer 13 changes from an insulator or a semiconductor to a conductor after extrusion.
本实施例提供的阵列基板设有至少一层力敏电阻材料层13,该力敏电阻材料层13将第一电极11即像素电极和第二电极12即公共电极或对地电极相连接,力敏电阻材料层13的电阻值随外力增大而减小,未有外力时,该力敏电阻材料层13是绝缘体或半导体,不影响显示效果,因力敏电阻材料层13连接第一电极和第二电极,因此,当力敏电阻材料层13挤压后电阻变小可以由绝缘体或半导体变成导体,导电的力敏电阻材料层13将第一电极11与第二电极12短接连通,从而可以消除挤压位置的第一电极11和第二电极12之间的高压差,避免受压部位的液晶分子重排,从而可以避免产生Trace Mura现象,最终提升该产品品质。The array substrate provided in this embodiment is provided with at least one layer of force-sensitive resistance material layer 13, and the force-sensitive resistance material layer 13 connects the first electrode 11, that is, the pixel electrode, and the second electrode 12, that is, the common electrode or the ground electrode. The resistance value of the sensitive resistance material layer 13 decreases with the increase of external force. When there is no external force, the force sensitive resistance material layer 13 is an insulator or semiconductor, which does not affect the display effect, because the force sensitive resistance material layer 13 is connected to the first electrode and The second electrode, therefore, when the force-sensitive resistance material layer 13 is extruded, the resistance becomes smaller and can be changed from an insulator or a semiconductor to a conductor, and the conductive force-sensitive resistance material layer 13 connects the first electrode 11 and the second electrode 12 by short-circuiting, Thereby, the high voltage difference between the first electrode 11 and the second electrode 12 at the pressed position can be eliminated, and liquid crystal molecule rearrangement at the pressed position can be avoided, so that Trace Mura phenomenon can be avoided, and the quality of the product can be finally improved.
本实施例中,第一电极11和第二电极12可以在同层,位于力敏电阻材料层13同一侧,力敏电阻材料层13可以位于第一电极11和第二电极12之上,13也可以位于第一电极11和第二电极12之下;如图1所示,力敏电阻材料层13覆盖在第一电极11和第二电极12上将第一电极11和第二电极12连接,此时第二电极12可以为公共电极。当然,第一电极11和第二电极12可以不同层,分别位于力敏电阻材料层13两侧,如图2所示,力敏电阻材料层13在第一电极11和第二电极12之间将第一电极11和第二电极12连接,此时第二电极12可以为公共电极或对地电极。In this embodiment, the first electrode 11 and the second electrode 12 may be on the same layer, located on the same side of the force-sensitive resistance material layer 13, and the force-sensitive resistance material layer 13 may be located on the first electrode 11 and the second electrode 12, 13 It can also be located under the first electrode 11 and the second electrode 12; as shown in FIG. , at this time the second electrode 12 may be a common electrode. Of course, the first electrode 11 and the second electrode 12 can be in different layers, respectively located on both sides of the force-sensitive resistance material layer 13, as shown in Figure 2, the force-sensitive resistance material layer 13 is between the first electrode 11 and the second electrode 12 The first electrode 11 and the second electrode 12 are connected, and the second electrode 12 may be a common electrode or a ground electrode.
具体地,本实施例提供的阵列基板是一种用于液晶显示面板的阵列基板,该阵列基板上的力敏电阻材料层13的材料具有力敏电阻性能,其电阻值随外力作用的变化而变化,具体地,力敏电阻材料的电阻随作用力增大而减小,外力作用使该力敏电阻材料层13由不导电的绝缘体或半导体变为导体,从而在挤压位置将第一电极11和第二电极12连通,如此避免显示面板按压部位的液晶分子重排,可避免产生Trace Mura,提升产品品质。Specifically, the array substrate provided in this embodiment is an array substrate used for liquid crystal display panels. The material of the force-sensitive resistance material layer 13 on the array substrate has force-sensitive resistance properties, and its resistance value changes with the change of external force. Specifically, the resistance of the force-sensitive resistor material decreases as the force increases, and the external force makes the force-sensitive resistor material layer 13 change from a non-conductive insulator or semiconductor to a conductor, so that the first electrode will 11 is in communication with the second electrode 12, so as to avoid rearrangement of the liquid crystal molecules at the pressing part of the display panel, avoid Trace Mura, and improve product quality.
需要说明是,本申请中所说的力或受压,一般是指目前能产生Mura的外力,其对应有一个阈值。当不受外力作用或所受外力小于该阈值时,本申请实施例的阵列基板中的力敏电阻材料层13为不导电的绝缘体或半导体;当外力大于或等于该阈值时,该力敏电阻材料层13由绝缘体或半导体变成导体,当外力再次撤走时,再次绝缘;如此既不影响正常使用时的显示面板的显示效果,又可以避免产生Trace Mura现象。It should be noted that the force or pressure mentioned in this application generally refers to the external force that can generate Mura at present, and there is a corresponding threshold. When there is no external force or the external force received is less than the threshold, the force-sensitive resistor material layer 13 in the array substrate of the embodiment of the present application is a non-conductive insulator or semiconductor; when the external force is greater than or equal to the threshold, the force-sensitive resistor The material layer 13 changes from an insulator or a semiconductor to a conductor, and when the external force is removed again, it will be insulated again; this will not affect the display effect of the display panel in normal use, and can avoid the Trace Mura phenomenon.
具体地,阵列基板上的力敏电阻材料层13的材料选自硅半导体、导电聚合物、含导电材料的有机绝缘材料中的至少一种。其中,导电聚合物是由导电单体与一些树脂类的单体通过化学聚合反应而成的聚合物,具体可以选自聚噻吩类聚合物和聚苯胺类聚合物中的至少一种。上述硅半导体和导电聚合物具有力敏电阻性能,制成本申请的力敏电阻材料层13后,未挤压时不导电,当收到一定阈值的外力时,即变成导体。Specifically, the material of the force-sensitive resistance material layer 13 on the array substrate is selected from at least one of silicon semiconductors, conductive polymers, and organic insulating materials containing conductive materials. Wherein, the conductive polymer is a polymer formed by chemical polymerization of conductive monomers and some resinous monomers, specifically at least one selected from polythiophene polymers and polyaniline polymers. The above-mentioned silicon semiconductor and conductive polymer have force-sensitive resistance properties. After the force-sensitive resistance material layer 13 of this application is made, it will not conduct electricity when it is not squeezed, and it will become a conductor when it receives an external force of a certain threshold.
上述含导电材料的有机绝缘材料中,导电材料选自碳纳米管和石墨烯纳米片的至少一种,石墨烯纳米片和碳纳米管分散在有机绝缘材料中。其中,有机绝缘材料可以是聚四氟乙烯、硅橡胶、丙烯类树脂等。未挤压时为绝缘体,当力敏电阻材料层13在一定阈值的外力作用后,其中的导电材料部分相互接触可使力敏电阻材料层13由绝缘体变成导体。In the above-mentioned organic insulating material containing conductive material, the conductive material is selected from at least one of carbon nanotubes and graphene nanosheets, and the graphene nanosheets and carbon nanotubes are dispersed in the organic insulating material. Wherein, the organic insulating material may be polytetrafluoroethylene, silicone rubber, acrylic resin, and the like. It is an insulator when it is not extruded, and when the force-sensitive resistor material layer 13 acts on a certain threshold of external force, the conductive material parts therein contact each other so that the force-sensitive resistor material layer 13 changes from an insulator to a conductor.
具体地,力敏电阻材料层13的厚度为200nm~1500nm。力敏电阻材料层13中,分散的碳纳米管尺寸可以为2nm×100nm~100nm×1μm,石墨烯纳米片尺寸可以为2nm×200nm~20nm×1μm。而200nm~1500nm厚度的力敏电阻材料层13更容易在一定阈值的外力作用后导电。进一步地,力敏电阻材料层13内的导电材料(如碳纳米管或石墨烯纳米片)占力敏电阻材料层13的体积百分比为40%~60%,进一步地占体积百分比为45%~55%。在上述体积占比条件下,力敏电阻材料层13受压可以更好地实现导电材料接触,从而变成导体。需要说明的是,本申请所说的纳米级材料,可以是指尺寸在1nm~1000nm之间的材料。Specifically, the thickness of the force sensitive resistance material layer 13 is 200nm-1500nm. In the force-sensitive resistor material layer 13 , the size of the dispersed carbon nanotubes may be 2nm×100nm˜100nm×1 μm, and the size of the graphene nanosheets may be 2nm×200nm˜20nm×1 μm. However, the force-sensitive resistance material layer 13 with a thickness of 200nm-1500nm is more likely to conduct electricity after a certain threshold of external force acts on it. Further, the conductive material (such as carbon nanotubes or graphene nanosheets) in the force-sensitive resistance material layer 13 accounts for 40% to 60% by volume of the force-sensitive resistance material layer 13, and further accounts for 45% to 60% by volume. 55%. Under the above-mentioned volume ratio conditions, the force-sensitive resistance material layer 13 can better realize the contact of the conductive material under pressure, so as to become a conductor. It should be noted that the nanoscale material mentioned in this application may refer to a material with a size between 1 nm and 1000 nm.
具体地,力敏电阻材料层13与第一电极11的接触部分设有导电的尖端结构,尖端结构的尖端朝向力敏电阻材料层13。或者,力敏电阻材料层13与第二电极12的接触部分导电设有导电的尖端结构,尖端结构的尖端朝向力敏电阻材料层13。具体地,该尖端结构是一层导电的尖端状材料,设于力敏电阻材料层13与第一电极11或者第二电极12之间,尖端结构尖端朝向力敏电阻材料层13。当力敏电阻材料层13在外力作用受压后,导电材料至少部分相互接触使力敏电阻材料层13由绝缘体变成导体,同时尖端结构可以刺穿力敏电阻材料层13表面,与导电材料接触导通,从而可以进一步增加力敏电阻材料层13与第一电极11或第二电极12的导电性。Specifically, the contact portion between the force-sensitive resistor material layer 13 and the first electrode 11 is provided with a conductive tip structure, and the tip of the tip structure faces the force-sensitive resistor material layer 13 . Alternatively, the contact portion between the force-sensitive resistor material layer 13 and the second electrode 12 is conductively provided with a conductive tip structure, and the tip of the tip structure faces the force-sensitive resistor material layer 13 . Specifically, the tip structure is a layer of conductive tip-shaped material, which is arranged between the force-sensitive resistor material layer 13 and the first electrode 11 or the second electrode 12 , and the tip of the tip structure faces the force-sensitive resistor material layer 13 . When the force-sensitive resistance material layer 13 is pressed by an external force, the conductive material is at least partially in contact with each other so that the force-sensitive resistance material layer 13 is changed from an insulator to a conductor, and the tip structure can pierce the surface of the force-sensitive resistance material layer 13 at the same time. The contact conduction can further increase the conductivity between the force-sensitive resistance material layer 13 and the first electrode 11 or the second electrode 12 .
第二实施例:Second embodiment:
本实施例提供一种阵列基板,如图3所示,该阵列基板还包括:This embodiment provides an array substrate, as shown in Figure 3, the array substrate also includes:
衬底10;Substrate 10;
栅极14,形成于衬底10上;a gate 14 formed on the substrate 10;
栅极绝缘层15,形成于衬底10上并覆盖栅极14;a gate insulating layer 15, formed on the substrate 10 and covering the gate 14;
有源层16,形成于栅极绝缘层15上;an active layer 16 formed on the gate insulating layer 15;
源漏极17,形成于有源层16上;The source and drain electrodes 17 are formed on the active layer 16;
钝化层18,形成于所述源漏极17上;a passivation layer 18 formed on the source and drain electrodes 17;
第一电极11和第二电极12不同层,第一电极11位于钝化层18上,第二电极12位于衬底10和栅极绝缘层15之间,第一电极11与钝化层18之间设有一层力敏电阻材料层13,第二电极12与栅极绝缘层15之间设有一层力敏电阻材料层13,第一电极11通过过孔21与第二电极12上的力敏电阻材料层13相接触。其中,第一电极11为像素电极,钝化层18上的力敏电阻材料层13可以将子像素电极连通;第二电极12为公共电极或对地电极,第二电极12上的力敏电阻材料层13可以将第一电极11和第二电极12连通,这样实现每个子像素电极和第二电极12连通。当力敏电阻材料层13受一定阈值的外力后变成导体,导电的力敏电阻材料层13将第一电极11与第二电极12连接导通,这样挤压位置将像素电极与公共电极或对地电极短接连通,消除挤压位置两电极之间的高压差,从而可以使更多像素单元区域避免受压部位的液晶分子重排,避免产生Trace Mura现象,最终提升该产品品质。其中,第一实施例的力敏电阻材料层13的材料、厚度可选方案均可以用于图3所示的阵列基板中。The first electrode 11 and the second electrode 12 have different layers, the first electrode 11 is located on the passivation layer 18, the second electrode 12 is located between the substrate 10 and the gate insulating layer 15, and between the first electrode 11 and the passivation layer 18 A layer of force-sensitive resistance material layer 13 is provided between them, and a layer of force-sensitive resistance material layer 13 is provided between the second electrode 12 and the gate insulating layer 15. The resistive material layer 13 is in contact. Wherein, the first electrode 11 is a pixel electrode, and the force-sensitive resistance material layer 13 on the passivation layer 18 can connect the sub-pixel electrodes; the second electrode 12 is a common electrode or an electrode to ground, and the force-sensitive resistance on the second electrode 12 The material layer 13 can communicate with the first electrode 11 and the second electrode 12 , so that each sub-pixel electrode can communicate with the second electrode 12 . When the force-sensitive resistive material layer 13 is subjected to an external force of a certain threshold, it becomes a conductor, and the conductive force-sensitive resistive material layer 13 connects the first electrode 11 and the second electrode 12, so that the extrusion position connects the pixel electrode and the common electrode or The ground electrode is short-circuited to eliminate the high pressure difference between the two electrodes at the squeezed position, so that more pixel unit areas can avoid the rearrangement of liquid crystal molecules at the pressed position, avoid the Trace Mura phenomenon, and ultimately improve the quality of the product. Wherein, the material and thickness options of the force sensitive resistance material layer 13 of the first embodiment can be used in the array substrate shown in FIG. 3 .
第三实施例:Third embodiment:
本实施例提供的阵列基板为COA(Color Filter On Array)基板,将色阻层集成制作于阵列基板一侧,具体地,如图4所示,该阵列基板还包括:The array substrate provided in this embodiment is a COA (Color Filter On Array) substrate, and the color-resist layer is integrated and manufactured on one side of the array substrate. Specifically, as shown in FIG. 4 , the array substrate also includes:
衬底10;Substrate 10;
栅极14,形成于衬底10上;a gate 14 formed on the substrate 10;
栅极绝缘层15,形成于衬底10上并覆盖栅极14;a gate insulating layer 15, formed on the substrate 10 and covering the gate 14;
有源层16,形成于栅极绝缘层15上;an active layer 16 formed on the gate insulating layer 15;
源漏极17,形成于有源层16上;The source and drain electrodes 17 are formed on the active layer 16;
钝化层18,形成于源漏极17上;a passivation layer 18 formed on the source and drain electrodes 17;
色阻层19,形成于钝化层18上;The color resist layer 19 is formed on the passivation layer 18;
平坦层20,形成于色阻层19上;a flat layer 20 formed on the color resist layer 19;
第一电极11和第二电极12同层,第一电极11为像素电极,第二电极12为公共电极;第一电极11和第二电极12间隔设置在平坦层20上,力敏电阻材料层13覆盖第一电极11和第二电极12,以将第一电极11和第二电极12连接。这样的结构不仅利于当力敏电阻材料层13的制备,工艺简单,而且当力敏电阻材料层13受一定阈值的外力后变成导体,导电的力敏电阻材料层13将第一电极11与第二电极12连接导通,这样挤压位置将像素电极与公共电极短接连通,从而可以避免受压部位的液晶分子重排,避免产生Trace Mura现象,最终提升该产品品质。其中,第一实施例的力敏电阻材料层13的材料、厚度可选方案均可以用于图4所示的阵列基板中。The first electrode 11 and the second electrode 12 are on the same layer, the first electrode 11 is a pixel electrode, and the second electrode 12 is a common electrode; the first electrode 11 and the second electrode 12 are arranged on the flat layer 20 at intervals, and the force-sensitive resistance material layer 13 covers the first electrode 11 and the second electrode 12 to connect the first electrode 11 and the second electrode 12 . Such a structure is not only beneficial to the preparation of the force-sensitive resistance material layer 13, and the process is simple, but also becomes a conductor when the force-sensitive resistance material layer 13 is subjected to an external force of a certain threshold value, and the conductive force-sensitive resistance material layer 13 connects the first electrode 11 with the first electrode 11. The second electrode 12 is connected and conducted, so that the squeezed position short-circuits the pixel electrode and the common electrode, thereby avoiding rearrangement of liquid crystal molecules at the pressed position, avoiding Trace Mura phenomenon, and finally improving the quality of the product. Wherein, the material and thickness options of the force sensitive resistance material layer 13 of the first embodiment can be used in the array substrate shown in FIG. 4 .
另外,力敏电阻材料层13还可以设置在平坦层20上,而第一电极11和第二电极12间隔设置在力敏电阻材料层13上,通过该力敏电阻材料层13实现连接。In addition, the force-sensitive resistance material layer 13 can also be disposed on the planar layer 20 , while the first electrode 11 and the second electrode 12 are spaced apart on the force-sensitive resistance material layer 13 , and the connection is realized through the force-sensitive resistance material layer 13 .
第四实施例:Fourth embodiment:
本实施例提供一种显示面板,如图5和图6所示,显示面板包括:阵列基板、与阵列基板相对设置的彩膜基板40,以及位于阵列基板和彩膜基板40之间的液晶层30;具体地,阵列基板包括:衬底10,形成于衬底10上的第一电极11和第二电极12;第一电极11为像素电极,第二电极12为公共电极或对地电极;第一电极11和第二电极12通过至少一层力敏电阻材料层13相连接,力敏电阻材料层13挤压后由绝缘体或半导体变成导体。This embodiment provides a display panel. As shown in FIG. 5 and FIG. 6 , the display panel includes: an array substrate, a color filter substrate 40 disposed opposite to the array substrate, and a liquid crystal layer located between the array substrate and the color filter substrate 40 30. Specifically, the array substrate includes: a substrate 10, a first electrode 11 and a second electrode 12 formed on the substrate 10; the first electrode 11 is a pixel electrode, and the second electrode 12 is a common electrode or a ground electrode; The first electrode 11 and the second electrode 12 are connected through at least one layer of force-sensitive resistance material layer 13, and the force-sensitive resistance material layer 13 changes from an insulator or a semiconductor to a conductor after extrusion.
其中,第一电极11和第二电极12可以在同层,位于力敏电阻材料层13同一侧,如图5所示;当然,第一电极11和第二电极12可以不同层,分别位于力敏电阻材料层13两侧,如图6所示。Wherein, the first electrode 11 and the second electrode 12 can be in the same layer, located on the same side of the force-sensitive resistance material layer 13, as shown in Figure 5; of course, the first electrode 11 and the second electrode 12 can be in different layers, respectively located in the force-sensitive resistance material layer 13. The two sides of the sensitive resistive material layer 13 are shown in FIG. 6 .
本实施例提供的显示面板包括本申请实施例特有的阵列基板,该阵列基板设有特有的力敏电阻材料层13将第一电极11和第二电极12连接,力敏电阻材料层13挤压后电阻变小可以由绝缘体或半导体变成导体,从而使第一电极11与第二电极12短接连通,这样可以避免受压部位液晶层30中的液晶分子31重排,从而可以避免产生Trace Mura现象,最终提升该显示面板的产品品质。The display panel provided in this embodiment includes the unique array substrate of the embodiment of the present application, the array substrate is provided with a unique force-sensitive resistance material layer 13 to connect the first electrode 11 and the second electrode 12, and the force-sensitive resistance material layer 13 is squeezed After the resistance becomes smaller, the insulator or semiconductor can be changed into a conductor, so that the first electrode 11 and the second electrode 12 are short-circuited, so that the rearrangement of the liquid crystal molecules 31 in the liquid crystal layer 30 at the pressured part can be avoided, thereby avoiding Trace The Mura phenomenon ultimately improves the product quality of the display panel.
具体地,显示面板的彩膜基板40设有黑色矩阵41,力敏电阻材料层与黑色矩阵41相对设置。力敏电阻材料一般是透明材料,遮光影响小,然而如本申请实施例中的力敏电阻材料层13与黑色矩阵41相对设置,这样可以进一步降低遮光影响,使显示面板具有更好的显示效果。Specifically, the color filter substrate 40 of the display panel is provided with a black matrix 41 , and the force sensitive resistance material layer is arranged opposite to the black matrix 41 . The force-sensitive resistance material is generally a transparent material, and the light-shielding effect is small. However, as in the embodiment of the present application, the force-sensitive resistance material layer 13 is set opposite to the black matrix 41, which can further reduce the light-shielding effect, so that the display panel has a better display effect. .
具体地,本申请实施例提供的显示面板中可以设置有上述第一实施例、第二实施例、以及第三实施例提供的阵列基板,因此,上述阵列基板可选的方案均可以用于该显示面板中,显示面板具有上述实施例提供的阵列基板的所有优势,在此不再赘述。Specifically, the display panel provided in the embodiment of the present application can be provided with the array substrates provided in the first embodiment, the second embodiment, and the third embodiment, therefore, the optional schemes of the above array substrates can all be used in this In the display panel, the display panel has all the advantages of the array substrate provided by the above embodiments, which will not be repeated here.
以上仅为本申请的可选实施例而已,并不用于限制本申请。对于本领域的技术人员来说,本申请可以有各种更改和变化。凡在本申请的精神和原则之内,所作的任何修改、等同替换、改进等,均应包含在本申请的权利要求范围之内。The above are only optional embodiments of the application, and are not intended to limit the application. For those skilled in the art, various modifications and changes may occur in this application. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principles of the present application shall be included within the scope of the claims of the present application.

Claims (20)

  1. 一种阵列基板,包括衬底和形成于所述衬底上的第一电极和第二电极,所述第一电极为像素电极,所述第二电极为公共电极或对地电极,其中,所述第一电极和所述第二电极通过至少一层力敏电阻材料层相连接,所述力敏电阻材料层挤压后由绝缘体或半导体变成导体。 An array substrate, comprising a substrate and a first electrode and a second electrode formed on the substrate, the first electrode is a pixel electrode, and the second electrode is a common electrode or a ground electrode, wherein the The first electrode and the second electrode are connected through at least one force-sensitive resistance material layer, and the force-sensitive resistance material layer changes from an insulator or a semiconductor to a conductor after extrusion.
  2. 如权利要求1所述的阵列基板,其中,所述阵列基板还包括: The array substrate according to claim 1, wherein the array substrate further comprises:
    栅极,形成于所述衬底上;a gate formed on the substrate;
    栅极绝缘层,形成于所述衬底上并覆盖所述栅极;a gate insulating layer formed on the substrate and covering the gate;
    有源层,形成于所述栅极绝缘层上;an active layer formed on the gate insulating layer;
    源漏极,形成于所述有源层上;source and drain electrodes formed on the active layer;
    钝化层,形成于所述源漏极上;a passivation layer formed on the source and drain;
    所述第一电极位于所述钝化层上,所述第二电极位于所述衬底和所述栅极绝缘层之间,所述第一电极与所述钝化层之间设有一层所述力敏电阻材料层,所述第二电极与所述栅极绝缘层之间设有一层所述力敏电阻材料层,所述第一电极通过过孔与所述第二电极上的所述力敏电阻材料层相接触。The first electrode is located on the passivation layer, the second electrode is located between the substrate and the gate insulating layer, and a layer of the passivation layer is provided between the first electrode and the passivation layer. The force-sensitive resistance material layer, a layer of the force-sensitive resistance material layer is provided between the second electrode and the gate insulating layer, and the first electrode is connected to the second electrode through a via hole. The force sensitive resistive material layers are in contact.
  3. 如权利要求1所述的阵列基板,其中,所述阵列基板还包括: The array substrate according to claim 1, wherein the array substrate further comprises:
    栅极,形成于所述衬底上;a gate formed on the substrate;
    栅极绝缘层,形成于所述衬底上并覆盖所述栅极;a gate insulating layer formed on the substrate and covering the gate;
    有源层,形成于所述栅极绝缘层上;an active layer formed on the gate insulating layer;
    源漏极,形成于所述有源层上;source and drain electrodes formed on the active layer;
    钝化层,形成于所述源漏极上;a passivation layer formed on the source and drain;
    色阻层,形成于所述钝化层上;a color resist layer formed on the passivation layer;
    平坦层,形成于所述色阻层上;a flat layer formed on the color resist layer;
    所述第一电极和所述第二电极同层,所述第二电极为公共电极;所述第一电极和所述第二电极间隔设置在所述平坦层上,所述力敏电阻材料层覆盖所述第一电极和所述第二电极,以将所述第一电极和所述第二电极连接;或者所述力敏电阻材料层设置在所述平坦层上,所述第一电极和所述第二电极间隔设置在所述力敏电阻材料层上,通过所述力敏电阻材料层实现连接。The first electrode and the second electrode are on the same layer, and the second electrode is a common electrode; the first electrode and the second electrode are arranged on the flat layer at intervals, and the force-sensitive resistance material layer Covering the first electrode and the second electrode to connect the first electrode and the second electrode; or the force sensitive resistance material layer is arranged on the flat layer, the first electrode and the second electrode The second electrodes are spaced on the force-sensitive resistance material layer, and are connected through the force-sensitive resistance material layer.
  4. 如权利要求1所述的阵列基板,其中,所述力敏电阻材料层的材料选自硅半导体、导电聚合物、含导电材料的有机绝缘材料中的至少一种。 The array substrate according to claim 1, wherein the material of the force sensitive resistance material layer is selected from at least one of silicon semiconductors, conductive polymers, and organic insulating materials containing conductive materials.
  5. 如权利要求4所述的阵列基板,其中,所述导电聚合物选自聚噻吩类聚合物和聚苯胺类聚合物中的至少一种。 The array substrate according to claim 4, wherein the conductive polymer is selected from at least one of polythiophene polymers and polyaniline polymers.
  6. 如权利要求4所述的阵列基板,其中,所述有机绝缘材料中的所述导电材料选自碳纳米管和石墨烯纳米片的至少一种。 The array substrate according to claim 4, wherein the conductive material in the organic insulating material is at least one selected from carbon nanotubes and graphene nanosheets.
  7. 如权利要求1所述的阵列基板,其中,所述力敏电阻材料层的材料选自含导电材料的有机绝缘材料,所述力敏电阻材料层厚度为200nm~1500nm。 The array substrate according to claim 1, wherein the material of the force-sensitive resistance material layer is selected from organic insulating materials containing conductive materials, and the thickness of the force-sensitive resistance material layer is 200 nm to 1500 nm.
  8. 如权利要求7所述的阵列基板,其中,所述导电材料占所述力敏电阻材料层的体积百分比为40%~60%。 The array substrate according to claim 7, wherein the volume percentage of the conductive material in the force sensitive resistance material layer is 40%-60%.
  9. 如权利要求7所述的阵列基板,其中,所述力敏电阻材料层与所述第一电极或所述第二电极的接触部分设有导电的尖端状材料,所述尖端状材料的尖端朝向所述力敏电阻材料层。 The array substrate according to claim 7, wherein the contact portion between the force-sensitive resistance material layer and the first electrode or the second electrode is provided with a conductive point-shaped material, and the point of the point-shaped material faces The force sensitive resistance material layer.
  10. 一种显示面板,包括阵列基板、与所述阵列基板相对设置的彩膜基板,以及位于所述阵列基板和所述彩膜基板之间的液晶层,所述阵列基板包括衬底和形成于所述衬底上的第一电极和第二电极,所述第一电极为像素电极,所述第二电极为公共电极或对地电极,其中,所述第一电极和所述第二电极通过至少一层力敏电阻材料层相连接,所述力敏电阻材料层挤压后由绝缘体或半导体变成导体。 A display panel, comprising an array substrate, a color filter substrate disposed opposite to the array substrate, and a liquid crystal layer located between the array substrate and the color filter substrate, the array substrate includes a substrate and is formed on the The first electrode and the second electrode on the substrate, the first electrode is a pixel electrode, and the second electrode is a common electrode or a ground electrode, wherein the first electrode and the second electrode pass through at least A layer of force-sensitive resistor material is connected, and the force-sensitive resistor material layer changes from an insulator or a semiconductor to a conductor after being extruded.
  11. 如权利要求10所述的显示面板,其中,所述阵列基板还包括: The display panel according to claim 10, wherein the array substrate further comprises:
    栅极,形成于所述衬底上;a gate formed on the substrate;
    栅极绝缘层,形成于所述衬底上并覆盖所述栅极;a gate insulating layer formed on the substrate and covering the gate;
    有源层,形成于所述栅极绝缘层上;an active layer formed on the gate insulating layer;
    源漏极,形成于所述有源层上;source and drain electrodes formed on the active layer;
    钝化层,形成于所述源漏极上;a passivation layer formed on the source and drain;
    所述第一电极位于所述钝化层上,所述第二电极位于所述衬底和所述栅极绝缘层之间,所述第一电极与所述钝化层之间设有一层所述力敏电阻材料层,所述第二电极与所述栅极绝缘层之间设有一层所述力敏电阻材料层,所述第一电极通过过孔与所述第二电极上的所述力敏电阻材料层相接触。The first electrode is located on the passivation layer, the second electrode is located between the substrate and the gate insulating layer, and a layer of the passivation layer is provided between the first electrode and the passivation layer. The force-sensitive resistance material layer, a layer of the force-sensitive resistance material layer is provided between the second electrode and the gate insulating layer, and the first electrode is connected to the second electrode through a via hole. The force sensitive resistive material layers are in contact.
  12. 如权利要求10所述的显示面板,其中,所述阵列基板还包括: The display panel according to claim 10, wherein the array substrate further comprises:
    栅极,形成于所述衬底上;a gate formed on the substrate;
    栅极绝缘层,形成于所述衬底上并覆盖所述栅极;a gate insulating layer formed on the substrate and covering the gate;
    有源层,形成于所述栅极绝缘层上;an active layer formed on the gate insulating layer;
    源漏极,形成于所述有源层上;source and drain electrodes formed on the active layer;
    钝化层,形成于所述源漏极上;a passivation layer formed on the source and drain;
    色阻层,形成于所述钝化层上;a color resist layer formed on the passivation layer;
    平坦层,形成于所述色阻层上;a flat layer formed on the color resist layer;
    所述第一电极和所述第二电极同层,所述第二电极为公共电极;所述第一电极和所述第二电极间隔设置在所述平坦层上,所述力敏电阻材料层覆盖所述第一电极和所述第二电极,以将所述第一电极和所述第二电极连接;或者所述力敏电阻材料层设置在所述平坦层上,所述第一电极和所述第二电极间隔设置在所述力敏电阻材料层上,通过所述力敏电阻材料层实现连接。The first electrode and the second electrode are on the same layer, and the second electrode is a common electrode; the first electrode and the second electrode are arranged on the flat layer at intervals, and the force-sensitive resistance material layer Covering the first electrode and the second electrode to connect the first electrode and the second electrode; or the force sensitive resistance material layer is arranged on the flat layer, the first electrode and the second electrode The second electrodes are spaced on the force-sensitive resistance material layer, and are connected through the force-sensitive resistance material layer.
  13. 如权利要求10所述的显示面板,其中,所述力敏电阻材料层的材料选自硅半导体、导电聚合物、含导电材料的有机绝缘材料中的至少一种。 The display panel according to claim 10, wherein the material of the force-sensitive resistive material layer is at least one selected from silicon semiconductors, conductive polymers, and organic insulating materials containing conductive materials.
  14. 如权利要求13所述的显示面板,其中,所述导电聚合物选自聚噻吩类聚合物和聚苯胺类聚合物中的至少一种。 The display panel according to claim 13, wherein the conductive polymer is at least one selected from polythiophene polymers and polyaniline polymers.
  15. 如权利要求13所述的显示面板,其中,所述有机绝缘材料中的所述导电材料选自碳纳米管和石墨烯纳米片的至少一种。 The display panel according to claim 13, wherein the conductive material in the organic insulating material is at least one selected from carbon nanotubes and graphene nanosheets.
  16. 如权利要求10所述的显示面板,其中,所述力敏电阻材料层的材料选自含导电材料的有机绝缘材料,所述力敏电阻材料层厚度为200nm~1500nm。 The display panel according to claim 10, wherein the material of the force-sensitive resistance material layer is selected from organic insulating materials containing conductive materials, and the thickness of the force-sensitive resistance material layer is 200 nm˜1500 nm.
  17. 如权利要求16所述的显示面板,其中,所述导电材料占所述力敏电阻材料层的体积百分比为40%~60%。 The display panel according to claim 16, wherein the conductive material accounts for 40%-60% by volume of the force-sensitive resistor material layer.
  18. 如权利要求17所述的显示面板,其中,所述导电材料占所述力敏电阻材料层的体积百分比为45%~55%。 The display panel according to claim 17, wherein the volume percentage of the conductive material in the force-sensitive resistance material layer is 45%-55%.
  19. 如权利要求16所述的显示面板,其中,所述力敏电阻材料层与所述第一电极或所述第二电极的接触部分设有导电的尖端状材料,所述尖端状材料的尖端朝向所述力敏电阻材料层。 The display panel according to claim 16, wherein the contact portion between the force-sensitive resistance material layer and the first electrode or the second electrode is provided with a conductive point-shaped material, and the point of the point-shaped material faces The force sensitive resistance material layer.
  20. 如权利要求10所述的显示面板,其中,所述彩膜基板设有黑色矩阵,所述力敏电阻材料层与所述黑色矩阵相对设置。 The display panel according to claim 10, wherein the color filter substrate is provided with a black matrix, and the force sensitive resistance material layer is arranged opposite to the black matrix.
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