WO2023046382A1 - Dispositif optoélectronique - Google Patents

Dispositif optoélectronique Download PDF

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Publication number
WO2023046382A1
WO2023046382A1 PCT/EP2022/073184 EP2022073184W WO2023046382A1 WO 2023046382 A1 WO2023046382 A1 WO 2023046382A1 EP 2022073184 W EP2022073184 W EP 2022073184W WO 2023046382 A1 WO2023046382 A1 WO 2023046382A1
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WO
WIPO (PCT)
Prior art keywords
receiver
transmitter
photodiodes
optoelectronic device
carrier
Prior art date
Application number
PCT/EP2022/073184
Other languages
German (de)
English (en)
Inventor
Ralph Wirth
Dirk Becker
Martin Hetzl
Horst Varga
Tansen Varghese
Alvaro Gomez-Iglesias
Original Assignee
Osram Opto Semiconductors Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
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Application filed by Osram Opto Semiconductors Gmbh filed Critical Osram Opto Semiconductors Gmbh
Publication of WO2023046382A1 publication Critical patent/WO2023046382A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
    • H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0475—PV cell arrays made by cells in a planar, e.g. repetitive, configuration on a single semiconductor substrate; PV cell microarrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/0543—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the refractive type, e.g. lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/0547—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the reflecting type, e.g. parabolic mirrors, concentrators using total internal reflection
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output

Definitions

  • An optoelectronic device is specified.
  • One problem to be solved is to specify an optoelectronic device that can be made particularly compact.
  • the optoelectronic device comprises a transmitter.
  • the transmitter is set up to emit electromagnetic radiation.
  • the transmitter is set up to be operated with an input voltage.
  • the transmitter can, for example, be a component that generates electromagnetic radiation in the wavelength range between infrared radiation and UV radiation.
  • the transmitter can be set up to generate electromagnetic radiation in the wavelength range from at least 350 nm to at most 1100 nm, in particular in the wavelength range from at least 800 nm to at most 950 nm, during operation.
  • the optoelectronic device comprises a receiver which is set up to receive the electromagnetic radiation and to supply an output voltage.
  • the receiver is set up in particular to receive the electromagnetic radiation emitted by the transmitter during operation and to convert it at least partially into electrical energy.
  • the receiver can in particular be tuned to the transmitter in such a way that the receiver for the dated Transmitter generated electromagnetic radiation has a particularly high absorption.
  • the transmitter comprises an edge emitter.
  • an edge emitter is understood to mean a radiation-emitting component which emits the electromagnetic radiation generated during operation transversely, in particular perpendicularly, to a side face or facet.
  • the electromagnetic radiation is then emitted, for example, through the side surface or facet.
  • the edge emitter can be a semiconductor component which has an epitaxially grown semiconductor body.
  • the direction in which the electromagnetic radiation is then emitted during operation can in particular be oblique or perpendicular to a growth direction of the semiconductor body.
  • the semiconductor body can be based on semiconductor materials such as In(Ga)N, In(Ga)AlP, (Al)GaAs, (In)GaAs.
  • the edge emitter can be, for example, a light-emitting diode or a laser diode, in particular a superluminescent diode or an edge-emitting semiconductor laser.
  • the transmitter can in particular also contain a single edge emitter which is operated with the input voltage. If the transmitter includes two or more edge emitters, which are connected in parallel or in series, for example, then the input voltage of the transmitter is calculated accordingly from the voltages with which the individual edge emitters are operated.
  • the optoelectronic device comprises a Receiver comprising at least one photodiode.
  • the photodiode can comprise a semiconductor body with at least one detecting layer which is set up to absorb the electromagnetic radiation generated by the edge emitter during operation and to convert it into electrical energy.
  • the at least one photodiode can be formed in the same material system as the edge emitter, for example.
  • the receiver can comprise a large number of photodiodes which can be connected to one another in series or in parallel. The output voltage of the receiver is then calculated accordingly from the voltage that drops across the individual photodiodes.
  • the optoelectronic device comprises a transmitter that is set up to emit electromagnetic radiation and to be operated with an input voltage, and a receiver that is set up to receive the electromagnetic radiation and to supply an output voltage , wherein the transmitter comprises an edge emitter and the receiver comprises at least one photodiode.
  • the optoelectronic device described here is based, inter alia, on the following considerations.
  • the optoelectronic device described here can advantageously be used as an optical voltage converter.
  • the optoelectronic device described here can thus form, for example, a transformer that does not require inductive elements, in particular without coils.
  • the optoelectronic device can thus be used in areas for which magnetic influence would be critical or which are provided with high external magnetic fields.
  • the optical power transmission in the optoelectronic device ensures galvanic isolation of the high-voltage side and the low-voltage side.
  • the output voltage generated can be free of interference. This can be the case in particular when used in measuring systems and/or monitoring systems in the smallest of spaces, which react sensitively to disturbances in the supply voltage.
  • Another idea of the device described here is to combine semiconductor light emitters and photodiodes, ie photovoltaic cells, in order to achieve a conversion from low to high voltage.
  • the wavelength of the emitted light can be between 350 nm and 1100 nm depending on the semiconductor materials used, for example: In(Ga)N, In(Ga)AlP, (Al)GaAs, (In)GaAs.
  • Typical input voltages are 1V, 3V, 5V, 8V, 10V or in between.
  • an array of series-connected photodiodes operating in photovoltaic mode collects the emitted light.
  • each individual photodiode generates a voltage of the order of 0.5-3 V and a current depending on the intensity of the incident light.
  • these individual voltages add up to a high one Total voltage that can exceed 10, 50, 100, 500, 1000, 10000 V.
  • the distance and area of the receiver can be compressed to a small extent.
  • the main limitations of miniaturizing the receiver are the material-dependent breakdown voltages within the receiver and the reduction in fill factor due to the circuitry.
  • the wireless transmission of energy and/or the conversion of voltage is possible in a particularly compact component.
  • the optoelectronic device is insensitive to external influences such as electromagnetic fields.
  • the input voltage is lower than the output voltage and the receiver comprises a multiplicity of photodiodes which are connected to one another in series; in this case it is possible, for example, that the transmitter also comprises a multiplicity of edge emitters, which then are connected in parallel to one another, for example.
  • the input voltage of the transmitter is less than the output voltage of the receiver.
  • the device is therefore set up to convert a low input voltage into a high output voltage.
  • the receiver can comprise a large number of photodiodes, for example at least 10 photodiodes, in particular at least 50 or at least 100 individual photodiodes.
  • the output voltage can easily be set via the number of photodiodes that are connected in series with one another.
  • the transmitter includes precisely one edge emitter.
  • the transmitter comprises in particular precisely one edge-emitting semiconductor laser chip. Due to the high efficiency of edge emitters, in particular of edge-emitting semiconductor laser chips, it is possible for the transmitter to include exactly one edge emitter. As a result, the device can be made particularly compact.
  • the optoelectronic device comprises an optical element which splits and/or bundles the electromagnetic radiation into a multiplicity of beams.
  • the optoelectronic radiation is emitted in a single beam by the transmitter, for example by the edge emitter.
  • the optical element can then be set up to split the optoelectronic radiation into a multiplicity of beams, it being possible for the multiplicity of beams to correspond to the number of photodiodes in the receiver. This ensures that each photodiode is irradiated with exactly one beam. In particular, it can also be made possible in this way that areas between the photodiodes on the receiver side are not are irradiated with the electromagnetic radiation. This makes the device particularly efficient.
  • the optical element can be provided to focus the electromagnetic radiation.
  • the radiation is bundled in such a way that individual photodiodes of the receiver are irradiated and areas between the photodiodes are not irradiated.
  • the optoelectronic device can comprise two or more such optical elements which are set up to split and/or bundle the electromagnetic radiation into a large number of beams.
  • the optical element can also form a second carrier for the receiver.
  • the photodiodes are applied to the second carrier.
  • the second carrier can then in particular also be a growth substrate for the photodiodes of the receiver.
  • each photodiode is uniquely assigned an optical element. This means that for each photodiode there is exactly one optical element that is intended to split and/or bundle the electromagnetic radiation.
  • the optoelectronic device comprises optics that deflect and/or direct the electromagnetic radiation from the transmitter to the receiver.
  • the optics can include radiation-refracting and/or radiation-reflecting elements that are set up to change the direction of the electromagnetic radiation, for example, in order to transmit it from the transmitter to direct and/or direct to the receiver. In this way, it is possible to mount the transmitter and receiver in an orientation that is optimized with regard to interconnection and/or heat dissipation, for example.
  • At least one optical element is arranged between two adjacent photodiodes.
  • This optical element can be provided for directing and/or conducting electromagnetic radiation onto the adjacent photodiodes.
  • electromagnetic radiation that impinges in a region between two adjacent photodiodes can still be used to generate energy by being deflected onto the photodiodes.
  • the optical element or a carrier for the optical element can be designed to be electrically insulating. In this way, improved galvanic isolation of the receiver's photodiodes from one another is made possible.
  • the device comprises a carrier which has a cover surface, the transmitter and the receiver being arranged on the cover surface and a radiation entry side of the receiver being directed away from the cover surface.
  • the device With such a configuration of the device, it is possible to arrange the transmitter and receiver next to one another in a particularly compact manner on the top surface of a common carrier. In this way, the device can be designed with a particularly small footprint, for example it is included also possible that the device is designed to be surface mountable.
  • the carrier can in particular be a connection carrier on which the transmitter and the receiver are mechanically fastened and via which the transmitter and the receiver can be electrically contacted.
  • the photodiodes and optionally the edge emitters may also be connected to one another via the carrier.
  • the carrier may have vias that allow the device to be surface mountable.
  • the surface with which the receiver is in contact with the carrier is designed to be particularly large. This improves heat dissipation from the receiver to the carrier.
  • the carrier has a cover surface, the transmitter and the receiver being arranged on the cover surface and a radiation side of the receiver facing a radiation exit side of the transmitter.
  • the photodiodes of the receiver can therefore be irradiated directly by the transmitter with the electromagnetic radiation. There is therefore no need for optics that are set up to direct and/or guide the electromagnetic radiation from the transmitter to the receiver.
  • the device comprises a first carrier, on which the transmitter is arranged, and a second carrier, on which the receiver is arranged, the first carrier and the second carrier being arranged opposite one another.
  • the first carrier can in particular also be a growth substrate for the edge emitter of the transmitter.
  • the second carrier can in particular also be a growth substrate for the photodiodes of the receiver.
  • the electromagnetic radiation expands from the edge emitter into a beam cone which has a larger opening angle in a vertical direction than in a horizontal direction, the vertical direction running transversely or perpendicularly to the top surface of the carrier. That is, the edge emitter of the transmitter is mounted in such a way that the fast axis of the electromagnetic radiation is perpendicular to the top surface of the carrier. In this way, when the receiver is aligned such that the radiation entry side of the receiver faces the radiation exit side of the transmitter, a particularly large area of the receiver can be illuminated directly.
  • an electrically insulating filling material is arranged between the photodiodes.
  • the electrically insulating filling material can be part of an optical element or serve as a carrier for an optical element which is arranged between the photodiodes in order to deflect and/or direct electromagnetic radiation onto them.
  • the area or can Be filled areas between the photodiodes of the receiver with the electrically insulating filling material.
  • the filling material can border directly on the side of the photodiodes.
  • the filling material makes it possible to prevent a high-voltage breakdown between the photodiodes.
  • the filler material can act as a moisture barrier between the photodiodes and as protection for the wearer.
  • the transmitter has a further radiation exit side, which is opposite the radiation exit side.
  • the transmitter has two opposite radiation exit sides through which the electromagnetic radiation is emitted in each case.
  • the transmitter includes an edge emitter for this purpose, which emits the electromagnetic radiation from two opposite side surfaces or facets.
  • the transmitter it is possible for the transmitter to include two edge emitters which are mounted in such a way that the radiation exit sides of the individual edge emitters face away from one another.
  • a further receiver with a further radiation entry side is set up to receive electromagnetic radiation which exits at the further radiation exit side.
  • the further radiation exit side is also followed by a receiver which receives the electromagnetic radiation exiting at the further radiation exit side.
  • the additional receiver can, for example, be structurally identical to the receiver.
  • the other The receiver can therefore also include a large number of photodiodes. It is possible that the photodiodes of the receiver and the further receiver are connected to one another in series and the output voltages of the two receivers add up accordingly.
  • the optoelectronic device comprises a transmitter 1 which emits electromagnetic radiation 2 during operation.
  • the transmitter 1 comprises an edge emitter 10, which in the present case is an edge-emitting semiconductor laser.
  • the edge emitter 10 emits the electromagnetic radiation 2 through a facet on its radiation exit side 11 .
  • the transmitter 1 and thus the Edge emitter 10 is attached to a first carrier 8 .
  • the transmitter 1 is operated with the input voltage UI.
  • the optoelectronic device comprises a receiver 3, which receives the electromagnetic radiation and supplies an output voltage UO in the process.
  • the receiver comprises a multiplicity of photodiodes 30 which receive the electromagnetic radiation on the radiation entry side 31 of the receiver 3 .
  • the receiver 3 and thus the photodiodes 30 are attached to a second carrier 9 .
  • the optoelectronic device further comprises a carrier 7 which has a cover surface 71 .
  • the transmitter 1 and the receiver 3 are arranged on the top surface 71 of the carrier 7 .
  • the transmitter 1 and receiver 3 are mounted on the carrier 7 in such a way that the radiation entry side 31 of the receiver 3 faces the radiation exit side 11 of the transmitter 1 .
  • the carrier 7 can be designed to be electrically insulating, for example, and is formed with a ceramic material for this purpose, for example.
  • the vertical direction V runs perpendicular to the top surface 71 of the carrier 7
  • the opening angle of the beam cone is, for example, between at least 25 and at most 50 degrees in direction V.
  • the opening angle is at least 5 and at most 20 degrees, for example.
  • the first carrier 8 for the transmitter 1 is designed so high that all the photodiodes 30 of the receiver 3 are illuminated.
  • the edge emitter 10 of the transmitter 1 and the photodiodes 30 of the receiver 3 can be formed in the same material system, for example.
  • they are each formed in one of the following material systems: (In)GaAs, (In)GaN, InGaAlP.
  • Photodiodes in this material system can be particularly inexpensive, but the efficiency of the system is greater for the same material systems on the transmitter 1 side and the receiver 3 side.
  • the receiver 3 includes photodiodes 30 with an edge length of 10 ⁇ m and a spacing of 20 ⁇ m, at each of which a voltage of 1 V drops. With 18 ⁇ 30 photodiodes 30, this results in a size of the receiver 3 of approximately 0.36 mm ⁇ 1.08 mm.
  • the receiver 3 includes photodiodes 30 with an edge length of 14 ⁇ m and a spacing of 20 ⁇ m, at each of which a voltage of 1.5 V drops. With 14 ⁇ 45 photodiodes 30, this results in a size of the receiver 3 of approximately 0.30 mm ⁇ 0.9 mm.
  • the receiver 3 includes photodiodes 30 with an edge length of 20 ⁇ m and a spacing of 20 ⁇ m, at each of which a voltage of 2.5 V drops. With 12 ⁇ 36 photodiodes 30, this results in a size of the receiver 3 of approximately 0.24 mm ⁇ 0.69 mm.
  • edge emitters 10 of the transmitter 1 are formed in the GaAs material system and the photodiodes 30 of the receiver 3 are formed in the Si material system, this results in an efficiency of the device of approximately 5.5% if a filling factor of the receiver 3 with photodiodes 30 is 25%. assumes This means that 5.5% of the electrical energy that is fed in at the transmitter end can be extracted again at the receiver end.
  • the Si-based receiver 3 includes photodiodes 30 with an edge length of 10 ⁇ m and a spacing of 20 ⁇ m, at each of which a voltage of 0.6 V drops. With 24 ⁇ 72 photodiodes 30, this results in a size of the receiver 3 of approximately 0.48 mm ⁇ 1.44 mm.
  • the device described is characterized by a small and compact size. It is also advantageous that transmitter 1 and receiver 3 can be mounted on the same carrier 7 .
  • the use of edge emitters 10 in transmitter 1 results in high efficiency.
  • the component can be made particularly thin, with component heights of at most 0.4 mm being possible.
  • the use of GaAs-based edge emitters and photodiodes is most advantageous.
  • the use of edge emitters 10 and photodiodes 30 based on InGaAlP is most advantageous without dropping the efficiency of the device too much.
  • the carrier 7 should be designed to be electrically insulating. This can be achieved, for example, by an electrically insulating layer below transmitter 1 and receiver 3. For example, a layer of AlGaAs with an aluminum content of 98% or SiN is suitable for this. The thickness of the layer should be 2.5 ⁇ m per 1000 V potential difference. A distance of approximately 330 ⁇ m is also required for electrical isolation between transmitter 1 and receiver 3 with a potential difference of 1000 V if air is arranged between the two components.
  • an optical element 41 is arranged in the beam path of electromagnetic radiation 2 and splits electromagnetic radiation 2 into a large number of beams 21 .
  • the optical element is for example a diffractive optical element, which can consist of a photonic crystal array, for example.
  • the optical element generates beams 21, each beam 21 being able to be aimed at exactly one photodiode 30 of the receiver 3.
  • the electromagnetic radiation 2 emitted by the transmitter 1 is distributed exclusively over the active areas of the receiver 3, ie the photodiodes 30, while the area between the photodiodes is not illuminated.
  • This increases the device efficiency, which is reduced in the exemplary embodiment in FIG. 1 due to the fill factor of the photodiodes.
  • the following changes in the efficiency or size of the device result for the examples listed above.
  • the efficiency of the device is approximately 52%.
  • the efficiency of the device is approximately 26%.
  • the efficiency of the device is approximately 5%.
  • the optical element 41 can be in direct contact with the edge emitter 10 of the receiver 1 . It is also possible for the optical element 41 to be mechanically attached to the first carrier 8 as well, which improves the mechanical stability of the device. This embodiment advantageously results in a very high efficiency of the device and a reduction in size. However, the adjustment effort associated with the attachment of the optical element 41 to the transmitter 1 is increased.
  • the transmitter 1 includes a further radiation exit side 12 which is opposite the radiation exit side 11 .
  • the optoelectronic device comprises a further receiver 5 with a further radiation entry side 51 which receives the electromagnetic radiation 2 which exits at the further radiation exit side 12 .
  • the further radiation entry side 51 is arranged opposite the radiation entry side 31 of the receiver.
  • the further diodes 50 of the further receiver 5 are arranged on the further second carrier 52 .
  • the structure can be axially symmetrical, with the receiver 3 and the further receiver 5 being able to have the same construction.
  • An optical element 41, 42 can be arranged between the transmitter 1 and the receivers 3, 5, which splits the radiation 2 into a plurality of beams 21, so that each photodiode 30, 50 is illuminated by exactly one beam.
  • the number of photodiodes can be doubled, as a result of which the output voltage UO can be doubled is in the event that all the photodiodes 30, 50 are connected in series with one another.
  • the transmitter 1 can, for example, comprise an edge emitter 10, which has a low-reflecting mirror on each of the two radiation exit sides 11, 12. If the optical elements 41, 42 are not used in the exemplary embodiment in FIG. 3, the photodiodes 30, 50 are illuminated over a wide area. whereby the fill factor of the receiver 3, 5 improves. Depending on whether the number of photodiodes 30, 50 remains the same as the number of photodiodes 30 in the case of planar illumination, as for example in the exemplary embodiment in FIG come, there are correspondingly different sizes of the device.
  • optical elements 41 are arranged in the beam path of electromagnetic radiation 2, which are set up to focus electromagnetic radiation 2 onto photodiodes 30 of receiver 2.
  • the optical elements 41 are, for example, microlenses of a microlens array.
  • Photodiode 30 applied. Furthermore, it is possible that in a wafer process, for example spin-on glass, is applied to the photodiodes 30 and subsequently structured. Furthermore, in a wafer process, glass can first be spun on to flatten and insulate the photodiodes. Subsequently, discrete microlenses made of the same material can be applied. This results in particularly low reflection losses. Overall, this makes it possible for each photodiode 30 to be uniquely assigned an optical element 41 .
  • the advantage of this embodiment is that, in comparison to planar illumination, as is described, for example, in connection with FIG .
  • optical elements 41, 42 as are described in connection with FIGS. 2 and 3, there is less adjustment effort.
  • silicon dioxide or spin-on glass which can be used to form the optical elements 41, can be used as insulators, which improves the breakdown stability on the receiver side 3.
  • the disadvantage is that the production of the optical elements 41 can prove to be technically difficult, for example in a wafer process on the photodiodes 30 .
  • optical elements 41 are located between adjacent photodiodes 30, each of which has a detecting layer 33, for example, which can be arranged between further semiconductor layers arranged.
  • the optical elements 41 are designed to be reflective and deflect electromagnetic radiation 2 onto the photodiodes 30 .
  • the optical elements 41 can be formed, for example, as reflective layers which are formed with a metal such as gold or silver.
  • the reflective layers are applied to an electrically insulating filling material 6 which is placed in the areas between the photodiodes 30 and can be in direct contact with the photodiodes 30 . In this way, electromagnetic radiation that would impinge on areas between the photodiodes 30 can be deflected onto them.
  • the optical elements 41 can be applied at the wafer level.
  • electrically insulating structures can be introduced between the photodiodes and shaped or spun on, onto which the optical elements 41 are then applied as a metal coating.
  • the frame may comprise a plastic material such as polydimethylsiloxane printed with a metal.
  • a plastic material as filling material 6 through a stencil in the areas between the photodiodes 30 and then to apply the optical elements 41 to the filling material 6, likewise using the stencil.
  • the plastic material can then be a silicone, for example.
  • the filling material 6 between the photodiodes 30 can electrically insulate them from one another. It also provides mechanical and chemical protection for the photodiodes 30, for example against moisture. Conductor tracks and contact points on the carrier 9 for the receiver 3 can also be mechanically and chemically protected as a result.
  • the distance between two columns is limited by the breakdown voltage. If the area between the photodiodes 30 of the receiver 3 is filled with air, there is a minimum distance of about 12 ⁇ m for photodiodes in the GaAs material system, a minimum distance of about 15 ⁇ m for photodiodes in the InGaAlP material system and a minimum distance of about 20 for photodiodes in the InGaN material system ⁇ m.
  • the area between the photodiodes 6 is filled with a filling material 6 that is formed with SiN or consists of this, there is a minimum spacing of approximately 90 nm for photodiodes in the GaAs material system, and a minimum spacing of approximately 113 nm for photodiodes in the InGaAlP material system Photodiodes in the InGaN material system have a minimum spacing of approximately 150 nm. With a dielectric filling material 6 between the photodiodes 30, they can therefore be arranged much closer together, which improves the filling factor.
  • the device comprises, in contrast to the embodiment of Figure 1, a receiver 3, in which the radiation entry side 31 of the Top surface 71 of the carrier 7 is directed away.
  • the receiver 3 can be connected to the carrier 7 over a particularly large area, resulting in particularly good heat dissipation.
  • the device also includes an optical system 4 which deflects the electromagnetic radiation 2 from the transmitter 1 to the receiver 3 .
  • the optics 4 include a prism as the optical element 41.
  • an optical element 42 can optionally be arranged, which can be, for example, a metal mirror in particular.
  • the optical element 41 ie the prism of the optics 4, is shaped in such a way that the electromagnetic radiation 2 is distributed particularly evenly over all the photodiodes 30 of the receiver 3.
  • the receiver includes 3 photodiodes 30 with an edge length of 10 ⁇ m and a distance of 20 ⁇ m, at each of which a voltage of 1 V drops. With 32 x 32 photodiodes, this results in a size of the receiver of approximately 0.64 mm x 0.64 mm.
  • the height h is 0.6 mm. This results in a minimum size of the device of 2.7 ⁇ 0.7 ⁇ 0.6 mm 2 . It is advantageous for the device in FIG. 6 that all components are arranged on the same wafer level and the device can be made particularly compact, especially for small distances d between transmitter 1 and receiver 3.
  • the disadvantage can be that the illumination of Areas between the photodiodes 30 a reduced efficiency occurs.
  • Embodiment is an optical element 43, which is, for example, a diffractive optical element between the transmitter 1 and the receiver 3 introduced.
  • the optical element 43 splits the electromagnetic radiation 2 into a multitude of beams 21, which are diverted by the optics 4 in such a way that each photodiode 30 is illuminated with exactly one beam and the areas between the photodiodes 30 remain free of illumination. This increases the device efficiency since the filling factor of the photodiodes 30 in the receiver 3 is no longer relevant.
  • the disadvantage is that the optics 4, the photodiodes 30 and the optical element 43 have to be adjusted very precisely. In this case, the optical element 43 can be in direct contact with the edge emitter 10 of the transmitter 1 . Furthermore, there can be direct contact between the first carrier 8 and the optical element 43 for improved mechanical stability.
  • the optical element 43 in this embodiment is designed as a structuring of the optical Elements 41 of the optics 4 running.
  • a diffractive optical element for example, is integrated into the optical element 41 as the optical element.
  • This can be realized, for example, by nanostructuring, which can be done, for example, by lithography or nanoprinting.
  • a photonic crystal array for example, is formed on the light entry side of the optical element 41 .
  • a further exemplary embodiment of a device described here is explained in more detail in conjunction with the schematic sectional illustration in FIG.
  • the optical element 43 which is provided for dividing the radiation 2 into a multiplicity of beams 21, is integrated into the surface of the reflecting side of the optics 4.
  • an optical element 42 is present in the form of a mirror, this simplifies the production of the optics 4 since both the optical element 43 and the optical element 42 lie directly one above the other.
  • a further exemplary embodiment of a device described here is explained in more detail in conjunction with the schematic sectional illustration in FIG.
  • optical elements 43 which are designed as microlenses, are integrated into the optics 4 or applied to the optics 4, for example glued.
  • the optical elements 43 are set up to focus the electromagnetic radiation 2 onto the photodiodes 30 .
  • optical elements 43 which are designed as microlenses, are attached to the radiation entry side of the optics 4.
  • the optics 4 are formed by the second carrier 9 for the photodiodes 30 .
  • the second carrier 9 can also be a growth substrate for the photodiodes 30 here.
  • the exemplary embodiment in FIG. 12 is described in connection with the schematic sectional view of FIG. 12, in which the optics 4 are formed by the second carrier 9 for the photodiodes 30 .
  • the second carrier 9 can also be a growth substrate for the photodiodes 30 here.
  • the photodiodes 30 face the carrier 7 and are glued to it, for example.
  • electrically insulating materials between the photodiodes 30 and between the photodiodes 30 and the Carrier 7 can be arranged.
  • a filling material 6 described here can be used.
  • Exemplary material combinations for forming the edge emitter 10 and the second carrier 9 are, for example:
  • an electrically conductive second carrier 9 which consists of GaAs, for example, or is formed with it
  • electrical insulation between the photodiodes 30 can be realized, for example, by an oxidation layer made of AlGaAs with a high aluminum content of, for example, 98% or more.
  • the oxidation layer can be epitaxially integrated below the photodiodes 30 . This advantageously results in an optical element 4 that is monolithically integrated into the second carrier 2 and thus in a lower complexity in comparison with discrete components. Furthermore, due to the smaller number of reflective interfaces, there is increased efficiency.
  • a disadvantage can result in light scattering of the second carrier 2 due to defects.
  • the interconnection of the photodiodes 30 on the second carrier 2 and the insulation of the photodiodes 30 can also be more complex.
  • a further exemplary embodiment of an optoelectronic device described here is explained in more detail in conjunction with the schematic sectional illustration in FIG. Analogously to the exemplary embodiment in FIG. 9, in this exemplary embodiment an optical element 43, which is set up to split the electromagnetic radiation 2 into a multiplicity of beams 21, is integrated into the optical element 42, which is a mirror.
  • the optical element 43 which is provided for dividing the electromagnetic radiation 2 into a plurality of beams 21, is integrated into the radiation entry side of the optics 4, which is formed by the second carrier 9, analogously to the exemplary embodiment in FIG.

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Abstract

L'invention concerne un dispositif optoélectronique comprenant un émetteur (1) conçu pour émettre un rayonnement électromagnétique (2) et pour fonctionner avec une tension d'entrée (UI), et un récepteur (3) conçu pour recevoir le rayonnement électromagnétique (2) et pour fournir une tension de sortie (UO), l'émetteur (1) comprenant un émetteur de bord (10), et le récepteur (3) comprenant au moins une photodiode (30).
PCT/EP2022/073184 2021-09-23 2022-08-19 Dispositif optoélectronique WO2023046382A1 (fr)

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5248931A (en) * 1991-07-31 1993-09-28 The United States Of America As Represented By The Secretary Of The Navy Laser energized high voltage direct current power supply
US20140061679A1 (en) * 2011-11-10 2014-03-06 Lei Guo Semiconductor electricity converter
WO2018126161A1 (fr) * 2016-12-30 2018-07-05 Texas Instruments Incorporated Systèmes et circuits d'isolation optique et détecteurs de photons dotés de jonctions p-n latérales étendues
US20180190628A1 (en) * 2016-12-30 2018-07-05 Texas Instruments Incorporated Isolator integrated circuits with package structure cavity and fabrication methods
US20210083141A1 (en) * 2019-09-16 2021-03-18 Facebook Technologies, Llc Optical transformer
WO2022072122A1 (fr) * 2020-09-29 2022-04-07 Facebook Technologies, Llc Intégration de transformateur optique haute tension

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050274871A1 (en) 2004-06-10 2005-12-15 Jin Li Method and apparatus for collecting photons in a solid state imaging sensor
US10901161B2 (en) 2018-09-14 2021-01-26 Toyota Motor Engineering & Manufacturing North America, Inc. Optical power transfer devices with an embedded active cooling chip

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5248931A (en) * 1991-07-31 1993-09-28 The United States Of America As Represented By The Secretary Of The Navy Laser energized high voltage direct current power supply
US20140061679A1 (en) * 2011-11-10 2014-03-06 Lei Guo Semiconductor electricity converter
WO2018126161A1 (fr) * 2016-12-30 2018-07-05 Texas Instruments Incorporated Systèmes et circuits d'isolation optique et détecteurs de photons dotés de jonctions p-n latérales étendues
US20180190628A1 (en) * 2016-12-30 2018-07-05 Texas Instruments Incorporated Isolator integrated circuits with package structure cavity and fabrication methods
US20210083141A1 (en) * 2019-09-16 2021-03-18 Facebook Technologies, Llc Optical transformer
WO2022072122A1 (fr) * 2020-09-29 2022-04-07 Facebook Technologies, Llc Intégration de transformateur optique haute tension

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