WO2023045397A1 - Resonator and electronic component - Google Patents

Resonator and electronic component Download PDF

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Publication number
WO2023045397A1
WO2023045397A1 PCT/CN2022/096637 CN2022096637W WO2023045397A1 WO 2023045397 A1 WO2023045397 A1 WO 2023045397A1 CN 2022096637 W CN2022096637 W CN 2022096637W WO 2023045397 A1 WO2023045397 A1 WO 2023045397A1
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WIPO (PCT)
Prior art keywords
resonator
slope
layer
substrate
resonant layer
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PCT/CN2022/096637
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French (fr)
Chinese (zh)
Inventor
曾晓意
伍伟
郭凯洲
李�浩
王锦辉
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华为技术有限公司
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Publication of WO2023045397A1 publication Critical patent/WO2023045397A1/en

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    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02Details
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02Details
    • H03H9/05Holders; Supports
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02Details
    • H03H9/125Driving means, e.g. electrodes, coils

Definitions

  • the present application relates to the technical field of communication, in particular to a resonator and electronic components.
  • a resonator is a component used to generate a resonant frequency and is widely used in electronic components related to frequency, for example, it is applied to electronic components such as clock oscillators and filters.
  • the working principle of the resonator is that its piezoelectric layer will undergo mechanical vibration under the action of a driving voltage, and will output an electrical signal under the mechanical vibration.
  • the mechanical vibration whose vibration frequency is far from the natural frequency also called resonance frequency
  • the mechanical vibration whose vibration frequency is close to the natural frequency is gradually retained, and finally by this part
  • the mechanical vibration outputs an electrical signal with a relatively stable frequency.
  • the present application provides a resonator and electronic components, which can alleviate the problem of frequency hopping of the resonator in the related art, and the technical solution is as follows:
  • a resonator in one aspect, includes a base and a resonant layer, the resonant layer is located on a first surface of the base;
  • At least one of the first surface and the second surface of the substrate includes a slope, and the first surface and the second surface are opposite to each other;
  • the slope is configured to reflect sound waves incident on the slope toward a direction closer to a side of the resonator.
  • the first surface of the substrate includes a slope
  • the second surface of the substrate includes a slope
  • both the first surface and the second surface of the substrate include a slope
  • At least one of the first surface and the second surface of the substrate includes a slope, and the slope is not parallel to other surfaces, for example, the slope is not parallel to the piezoelectric layer, and the slope is not parallel to the electrode layer.
  • At least one of the first surface and the second surface of the substrate is a slope at a position corresponding to the resonant layer.
  • the second surface of the base is an inclined plane
  • the two sides of the inclined plane having a height difference are respectively located on opposite sides of the base.
  • the second surface of the base is an inclined plane at the position corresponding to the resonant layer, while it is a plane at other positions. is a plane, and the plane is a plane parallel to the upper surface of the resonant layer, then, the two sides with height difference of the inclined plane are respectively located in the plane where the first side of the resonant layer is located and the plane where the second side of the resonant layer is located, and the first side of the resonant layer Opposite to the position of the second side.
  • the first surface of the base is inclined, or the second surface is inclined, or both the first surface and the second surface are inclined, which facilitates processing and improves the processing efficiency of the resonator.
  • At least one of the first surface and the second surface of the substrate includes a first slope and a second slope at a position corresponding to the resonant layer
  • the first side of the first slope and the first side of the second slope intersect on a first intersection line, and the first intersection line is close to the resonant layer, the second side of the first slope and the second slope The second side of each is far away from the resonant layer, and the second side is the side opposite to the position of the first intersection line.
  • the sound waves incident on the first slope are gradually reflected to the position of the second side of the first slope and attenuated, and the sound waves incident to the second slope are gradually reflected to the position of the second side of the second slope And attenuation, so that the effect of suppressing the spurious vibration modes generated by these sound waves can be achieved.
  • At least one of the first surface and the second surface of the substrate includes a third slope and a first plane at a position corresponding to the resonant layer
  • the third side of the third slope and the third side of the first plane intersect at a second intersection line, and the second intersection line is close to the resonant layer, and the fourth side of the third slope is far away from the In the resonant layer, the fourth side is the side opposite to the position of the second intersection line.
  • the sound waves incident on the third slope can be reflected to the fourth side close to the third slope to be leaked and attenuated, so that the spurious vibration modes generated by these sound waves can be suppressed.
  • the resonance layer includes a piezoelectric layer and two electrode layers, and the piezoelectric layer is located between the two electrode layers.
  • the piezoelectric layer can also be called a piezoelectric film, and the electrode layer can also be called a metal electrode. Since one of the two electrode layers is located above the piezoelectric layer, and the other is located below the piezoelectric layer, so The two electrode layers may also be referred to as upper and lower electrodes.
  • the substrate, one of the electrode layers, the piezoelectric layer and the other electrode layer are stacked and arranged in sequence.
  • At least one of the first surface and the second surface of the substrate may include a slope and an arc at a position corresponding to the resonant layer.
  • first surface or the second surface of the substrate includes slopes and arcs.
  • first surface of the base includes a slope
  • second surface of the base includes an arc.
  • first surface of the base includes a curved surface
  • the second surface of the base includes a slope.
  • the resonator can encourage the incident sound wave to reflect toward the side of the resonator, so that the sound wave leaks or diffuses, and gradually attenuates. Once these sound waves are attenuated, the spurious vibration modes generated by these sound waves can be effectively suppressed, thereby alleviating the interference of the parasitic vibration modes on the effective vibration modes, thereby alleviating the frequency hopping of the resonator during operation.
  • a resonator in another aspect, includes a substrate and a resonant layer, the resonant layer is located on the first surface of the substrate;
  • At least one of the first surface and the second surface of the base includes an arc surface, and the positions of the first surface and the second surface are opposite;
  • the arcuate surface is configured to reflect sound waves incident on the arcuate surface in a direction close to the side of the resonator.
  • At least one of the first surface and the second surface of the substrate of the resonator includes an arc surface, and the arc surface is not parallel to other surfaces, for example, the arc surface and the piezoelectric layer are not parallel, and the arc surface is not parallel to the piezoelectric layer. If the surface and the electrode layer are not parallel, the sound waves between the arc surface and other surfaces will be reflected to the side of the resonator and leak after multiple transmissions, and the spurious vibration modes generated by these sound waves can be effectively suppressed. Once the spurious vibration mode is effectively suppressed, the interference caused by the spurious vibration mode to the effective vibration mode can be weakened, so that the frequency jump of the resonator can be alleviated or even avoided.
  • At least one of the first surface and the second surface of the substrate is an arc surface at a position corresponding to the resonant layer.
  • the center of the arc surface protrudes toward the resonator layer, and the edge of the arc surface away from the center is away from the resonance layer, so that the sound waves incident on the arc surface are reflected to the side of the resonator and leak.
  • At least one of the first surface and the second surface of the substrate includes an arc surface and a second plane at a position corresponding to the resonant layer
  • the fifth side of the arcuate surface and the fifth side of the second plane intersect at a third intersection line, the third intersection line is close to the resonant layer, and the sixth side of the arcuate surface is far away from the resonant layer , the sixth side is the side opposite to the position of the third intersection line.
  • the second surface of the substrate includes an arc surface and a second plane directly below the resonant layer, the arc surface and the second plane intersect at a third intersection line, the third intersection line is close to the resonator layer and parallel to the resonator layer, and the arc The side of the surface opposite to the position of the third intersection line is away from the resonant layer and parallel to the resonant layer.
  • the curved surface is a spherical surface or a parabolic surface, and may also be an arched surface or the like.
  • At least one of the first surface and the second surface of the substrate includes an inclined surface and an arc surface at a position corresponding to the resonant layer, and both the inclined surface and the arc surface are used to make the incident sound wave approach the resonance direction reflection from the side of the device.
  • first surface or the second surface of the substrate includes slopes and arcs.
  • first surface of the base includes a slope
  • second surface of the base includes an arc.
  • first surface of the base includes a curved surface
  • the second surface of the base includes a slope.
  • the spurious vibration modes generated by these sound waves can be effectively suppressed, thereby alleviating the interference of the parasitic vibration modes on the effective vibration modes, thereby alleviating the frequency hopping of the resonator during operation.
  • an electronic component in another aspect, includes the above-mentioned resonator.
  • the electronic component includes the above-mentioned resonator, at least one of the first surface and the second surface of the substrate includes a slope, and the slope is not parallel to other surfaces, for example, the slope and the pressure
  • the electric layer is not parallel, and the slope and the electrode layer are not parallel, so the sound waves between the slope and other surfaces will reflect to the side of the resonator after multiple transmissions and leak, which can effectively suppress the spurious vibration modes generated by these sound waves .
  • the spurious vibration mode is effectively suppressed, the interference caused by the spurious vibration mode to the effective vibration mode can be weakened, so that the frequency jump of the resonator can be alleviated or even avoided.
  • Fig. 1 is a structural schematic diagram of a conventional resonator
  • Fig. 2 is a structural schematic diagram of a conventional resonator
  • Fig. 3 is a schematic structural diagram of a resonator provided by the present application.
  • Fig. 4 is a schematic structural diagram of a resonator provided by the present application.
  • FIG. 5 is a schematic structural diagram of a resonator provided by the present application.
  • FIG. 6 is a schematic structural diagram of a resonator provided by the present application.
  • Fig. 7 is a schematic diagram of a sound wave propagating in a resonator provided by the present application.
  • Fig. 8 is a schematic structural diagram of a resonator provided by the present application.
  • FIG. 9 is a schematic structural diagram of a resonator provided by the present application.
  • FIG. 10 is a schematic structural diagram of a resonator provided by the present application.
  • FIG. 11 is a schematic structural diagram of a resonator provided by the present application.
  • Fig. 12 is a schematic structural diagram of a resonator provided by the present application.
  • Fig. 13 is a schematic structural diagram of a resonator provided by the present application.
  • Fig. 14 is a schematic diagram of a sound wave propagating in a resonator provided by the present application.
  • Fig. 15 is a schematic structural diagram of a resonator provided by the present application.
  • a resonator is a component used to generate a resonant frequency. For example, it can use acoustic resonance to realize electrical frequency selection, and can be widely used in electronic components related to frequency. For example, It can be used in electronic components such as clock oscillators and filters.
  • the resonator may be a bulk acoustic wave (bulk acoustic wave, BAW) resonator, and the BAW resonator is a device that generates frequencies using bulk acoustic wave resonance.
  • Bulk acoustic wave is an acoustic wave that propagates inside an object, such as an acoustic wave that travels back and forth between two opposite surfaces of an object.
  • Bulk acoustic wave is opposite to the concept of surface acoustic wave (SAW), and surface acoustic wave is a kind of Acoustic waves propagating along a solid surface, devices that generate frequencies through surface acoustic wave resonance can be called SAW resonators.
  • the most basic structure of the resonator is, as shown in FIG. 1 , mainly including a base 1 and a resonant layer 2.
  • the resonant layer 2 is located on the surface of the base 1.
  • the base 1 can also be called a substrate for supporting the resonant layer 2.
  • the resonant layer 2 mainly includes a piezoelectric layer 21 and two electrode layers 22, and the piezoelectric layer 21 is located between the two electrode layers 22, forming a similar sandwich structure.
  • the piezoelectric layer 21 may also be called a piezoelectric film (piezo layer).
  • the electrode layer 22 can also be referred to as a metal electrode, and one of the two electrode layers 22 is used as a positive electrode, and the other is used as a negative electrode. Since one of the two electrode layers 22 is located above the piezoelectric layer 21 and the other is located below the piezoelectric layer 21, the two electrode layers can also be called top electrode and bottom electrode respectively.
  • the substrate 1 , one of the electrode layers 22 , the piezoelectric layer 22 and the other electrode layer 22 are stacked and arranged in sequence.
  • the area of the substrate 1 may be equal to the area of the resonant layer 2 . In another example, as shown in FIG. 1 , the area of the substrate 1 may also be much larger than the area of the resonant layer 2 . Wherein, the relationship between the area of the substrate 1 and the area of the resonant layer 2 is not limited, and can be flexibly designed.
  • the areas of the piezoelectric layer 21 and the two electrode layers 22 may be equal.
  • the area of the piezoelectric layer 21 is equal to the area of the electrode layer 22 away from the substrate 1, and the area of the piezoelectric layer 21 is smaller than the area of the electrode layer 22 close to the substrate 1, and The area of the electrode layer 22 close to the substrate 1 may be equal to or smaller than the area of the substrate 1 .
  • this embodiment does not specifically limit the specific relationship among the area of the substrate 1 , the area of the piezoelectric layer 21 and the areas of the two electrode layers 22 , and it can be flexibly designed.
  • the piezoelectric layer 21, as the core component of the resonator is made of piezoelectric material and has a piezoelectric effect.
  • the piezoelectric effect is that when a voltage is applied to the two opposite surfaces of the piezoelectric layer 21 , a slight deformation will occur to generate sound waves, on the contrary, when the piezoelectric layer 21 is under pressure, a voltage will be generated.
  • the principle of the piezoelectric layer 21 generating sound waves and voltages can be as follows:
  • a wave resonator is a device that uses acoustic resonance to achieve electrical frequency selection. Its principle can be as follows. Among them, resonance is also called resonance. , the phenomenon that the amplitude of the object increases sharply, and the frequency at which resonance occurs can be called the resonance frequency. Then, when the piezoelectric layer 21 vibrates under the action of voltage, the vibrations that are far from the natural frequency are gradually attenuated, while the vibrations that are the same or close to the fixed frequency are retained, and finally the piezoelectric layer 21 vibrates at the resonant frequency , then the electrical signal generated at the resonant frequency is also an electrical signal with a relatively pure frequency, and then the acoustic resonance realizes electrical frequency selection.
  • the resonator may further include a reflective layer 3 located between the substrate 1 and the resonant layer 2 .
  • the reflective layer 3 is used to reflect the incident sound wave to the piezoelectric layer 21, so as to confine the sound wave in the piezoelectric layer 21 as much as possible, so as to improve the quality factor (quality factor, Q) of the resonator.
  • the reflective layer 3 may be a Bragg reflective layer
  • the Bragg reflective layer is a structure formed by adopting a series of high and low impedance acoustic reflective layers alternately, so that the sound wave can be well reflected to the piezoelectric layer 21, and the sound wave is limited to the piezoelectric layer. 21 for internal spread.
  • the reflective layer 3 can also be a structure with a cavity. There is a vacuum or air in the cavity, and the acoustic resistance is relatively large. During the transmission, the sound wave encounters the cavity of the reflective layer 3 and can also be well reflected to the piezoelectric layer. In 21, the acoustic wave is confined inside the piezoelectric layer 21 to propagate.
  • the resonator including the Bragg reflection layer can be called a solid mounted resonator (solid mounted resonator, SMR), and the resonator including a reflection layer with a cavity can be called a film bulk acoustic resonator (film bulk acoustic resonator, FBAR).
  • SMR solid mounted resonator
  • FBAR film bulk acoustic resonator
  • this embodiment does not limit the specific form of the reflective layer 3, which can be flexibly selected according to the situation.
  • the number of reflective layers 3 may also be two, one reflective layer 3 is located between the base 1 and the resonant layer 2, and the other reflective layer 3 is located on the upper surface of the resonant layer 2 away from the base 1, that is Yes, the resonant layer 2 is located between two reflective layers 3 .
  • this embodiment does not limit whether the resonator includes the reflective layer 3 or not, and how many reflective layers 3 it includes, which can be flexibly selected according to the situation.
  • the frequency of the resonance output generated by the sound wave propagating in the piezoelectric layer 21 is the desired frequency, which can be called the working frequency, and the vibration mode generated by the sound wave can be called is an effective vibration mode.
  • the frequency of the vibration generated by the sound wave propagating between the other two surfaces is an unwanted frequency, which can be called a spurious frequency, and the vibration mode generated by this sound wave can be called a parasitic vibration mode.
  • vibration modes generated by sound waves propagating between the lower surface of the substrate 1 and the upper surface of the resonant layer 2 may be referred to as spurious vibration modes.
  • the interference of the parasitic vibration mode to the effective vibration mode can be weakened or even avoided as much as possible by controlling the thickness of the substrate 1, the reflective layer 3 and the resonance layer 2, etc., but the processed When the resonator is working, the ambient temperature will change. Once the ambient temperature changes, it will affect the thickness of the substrate 1, reflective layer 3 and resonant layer 2, causing the parasitic vibration mode to interfere with the effective vibration mode, further causing The operating frequency of the resonator jumps.
  • the resonator of this solution can reduce or even avoid the interference of the parasitic vibration mode on the effective vibration mode by effectively suppressing the parasitic vibration mode, thereby alleviating the occurrence of frequency jump of the resonator.
  • this resonator comprises base 1 and resonant layer 2, and resonant layer 2 is positioned at the surface of base 1, for example, can be marked as the first surface with resonant layer 2 place surface, so, resonant layer 2 is located on the first surface of the substrate 1.
  • the first surface of the substrate 1 may be the upper surface or the lower surface of the substrate 1. In the examples of this application, the first surface may be used as the upper surface of the substrate 1 for example.
  • the slope 11 may be a plane not parallel to the piezoelectric layer 21 of the resonance layer 2 .
  • the slope 11 may be a plane that is not parallel to the upper surface of the piezoelectric layer 21 away from the substrate 1, wherein the upper surface of the piezoelectric layer 21 away from the substrate 1 and the lower surface close to the substrate 1 are connected to each other. for parallel.
  • the angle between the slope 11 and the piezoelectric layer 21 is ⁇ .
  • the second surface of the base 1 may include a slope 11.
  • the first surface of the base 1 may also include a slope 11.
  • the lower surface of the electrode layer 22 located below, away from the piezoelectric layer 21 is an inclined plane matching the first surface of the substrate 1 .
  • both the first surface and the second surface of the substrate 1 may include a slope 11 .
  • the plane that is not parallel to the piezoelectric layer 21 can be called an inclined plane, then, as shown in FIG. , the plane where the piezoelectric layer 21 is located is parallel to the horizontal plane, but as shown in FIG. 6 , the plane where the piezoelectric layer 21 is located is not parallel to the horizontal plane.
  • which surface of the substrate 1 includes the slope 11 is not limited, and it can be flexibly selected so that at least one of the first surface and the second surface of the substrate 1 is not parallel to the piezoelectric layer 21.
  • the second surface of the base 1 that is, the lower surface of the base 1 including the slope 11 may be used as an example.
  • the inclined surface 11 is configured to encourage the reflection of sound waves incident on the inclined surface 11 towards the side of the resonator, for example, the reflected sound waves are directed towards the peripheral edge of the substrate 1 .
  • the lower surface of the substrate 1 includes a slope 11, then, the sound waves (which may be called clutter) between the lower surface of the substrate 1 and other surfaces will be reflected to the side of the resonator after multiple transmissions. part, leaks out through the sides of the resonator and is attenuated. Once these clutters are attenuated, the spurious vibration modes generated by these clutters can be effectively suppressed. Once the spurious vibration mode is suppressed, the interference of the spurious vibration mode to the effective vibration mode can be weakened, and then the frequency hopping of the resonator can be alleviated or even avoided.
  • the sound waves which may be called clutter
  • solid line arrow represents the acoustic wave propagating in piezoelectric layer 21, is the sound wave that does not need attenuation
  • dotted line arrow among Fig. 7 represents on inclined plane 11 and other surfaces (such as the upper surface of electrode layer 22 being positioned at above)
  • the sound waves propagating between are the sound waves that need to be attenuated.
  • the appropriate ⁇ can be selected according to the suppression of the spurious vibration mode and the manufacturing situation of the resonator. For example, ⁇ can be about one degree.
  • At least one of the first surface and the second surface of the substrate 1 may be a slope 11 at a position corresponding to the resonant layer 2 .
  • the slope 11 intersects the plane where the first side of the resonant layer 1 is located and the plane where the second side is located, and the lines of intersection are all parallel to the upper surface of the resonant layer 2, wherein the resonant layer 2
  • the positions of the first side and the second side are opposite.
  • the second surface (i.e. the lower surface) of the base 1 can be used as an example.
  • the second surface of the base 1 is a slope 11, as shown in FIG. Located on opposite sides of the base 1.
  • the second surface of the base 1 is a slope 11 at the position corresponding to the resonant layer 2, and is a plane at other positions.
  • the second surface of the base 1 has a relatively large area, and can 2 is an inclined plane, and other positions are planes, and the plane is a plane parallel to the upper surface of the resonant layer 2.
  • the two sides of the inclined plane 11 with a height difference are respectively located on the plane where the first side of the resonant layer 2 is located and the resonant layer. In the plane where the second side of the resonant layer 2 is located, the positions of the first side and the second side of the resonant layer 2 are opposite.
  • the first surface of the base 1 is an inclined plane 11, or the second surface is an inclined plane 11, or the first surface and the second surface are both inclined planes 11, which is convenient for processing, for example, after the base 1 is processed, the base 1 can be processed
  • the surface is ground to grind out the bevel 11 .
  • the shape of such a base 1 including the slope 11 may be wedge-shaped.
  • the first surface of the substrate 1 is the slope 11
  • the first surface of the substrate 1 can be ground to form the slope 11 before depositing the resonant layer 2 , for example, before depositing the electrode layer 22 .
  • the second surface of the substrate 1 is a bevel
  • the bevel 11 can be ground out before the resonant layer 2 is deposited, or the bevel 11 can be ground after the resonant layer 2 is deposited.
  • At least one of the first surface and the second surface of the substrate 1, in the scheme where the position corresponding to the resonator layer 2 is an inclined plane 11, as shown in FIG. Close to one side, attenuated by side leakage of the resonator.
  • an acoustic wave between the inclined plane 11 and the upper surface of the electrode layer 22 away from the substrate 1 an acoustic wave between the inclined plane 11 and the upper surface of the piezoelectric layer 21, an acoustic wave between the inclined plane 11 and the lower surface of the piezoelectric layer 21,
  • the sound waves between the slope 11 and the lower surface of the electrode layer 22 close to the substrate 1, and the sound waves between the slope 11 and the upper surface of the substrate 1 can be gradually attenuated, so that the spurious vibration modes generated by these sound waves can be suppressed.
  • At least one of the first surface and the second surface of the substrate 1 may also include a plurality of slopes at the position corresponding to the resonant layer 2, and each slope of the multiple slopes is close to the resonator.
  • the distance between the edge of the central axis and the resonant layer 2 is relatively short, while the distance between the edge far away from the central axis of the resonator and the resonant layer 2 is relatively long. In this way, the sound waves incident on each slope can be reflected toward the side of the resonator, and then leak and diffuse outward through the side, so that the spurious vibration modes generated by these sound waves can be effectively suppressed.
  • the number of slopes 11 included in at least one of the first surface and the second surface of the substrate 1 may be two, which are respectively denoted as the first slope 11a and the second slope 11b, as shown in FIGS. 8 and 9 , the first side of the first slope 11a and the first side of the second slope 11b intersect at the first intersection line 111, the first intersection line 111 is parallel to the upper surface of the resonance layer 2, and is close to the resonance layer 2, the first slope 11a Both the second side 112 of the second slope 11b and the second side of the second slope 11b are far away from the resonant layer 2 , wherein the second side 112 is the side opposite to the position of the first intersection line 111 .
  • the second surface (i.e., the lower surface) of the substrate 1 includes a first slope 11a and a second slope 11b directly below the resonant layer 2, and the first slope 11a and the second slope 11b intersect at the first slope 11b.
  • a line of intersection 111, the first line of intersection 111 is parallel and close to the resonant layer 2, and the side of the first slope 11a away from the first line of intersection 111 is far away from the resonant layer 2, and the side of the second slope 11b away from the first line of intersection 111 is also Away from the resonant layer 2, the second surface of the substrate 1 constitutes a herringbone surface.
  • the sound wave incident on the first slope 11a is gradually reflected to the position of the second edge 112 of the first slope 11a and attenuated, and the sound wave incident on the second slope 11b is gradually reflected to the second slope Attenuation at the position of the second side 112 of 11b. Therefore, the effect of suppressing the spurious vibration modes generated by these sound waves can be achieved.
  • At least one of the first surface and the second surface of the substrate 1 may also include a third slope 11c and a first plane 12 at a position corresponding to the resonant layer 2, that is, the surface of the substrate 1 Directly below the resonant layer 2 includes not only a slope but also a plane.
  • the third side of the third slope 11c and the third side of the first plane 12 intersect at the second intersection line 11-12, and the second intersection line 11-12 is close to the resonant layer 2, the third slope 11c
  • the fourth side 113 is far away from the resonant layer 2, and the fourth side 113 is the side opposite to the position of the second intersection line 11-12.
  • the second surface of the substrate 1 includes a third slope 11c and a first plane 12 at a position directly below the resonant layer 2, and the third slope 11c and the first plane 12 are compared to the second intersection line 11-12, the second intersection line 11-12 is parallel and close to the resonant layer 2, and the side of the third slope 11c opposite to the second intersection line 11-12 is parallel and away from the resonant layer 2.
  • the resonator can alleviate or even avoid the problem of frequency hopping, and improve the frequency stability of the resonator. Once the frequency stability of the resonator is high, the output frequency of the resonator can be locked near the target frequency, wherein the target frequency is the frequency that technicians expect the resonator to output.
  • phase locked loop is integrated in the circuit of the resonator.
  • the phase locked loop is a phase error control circuit, which can obtain the frequency adjustment value by comparing the output frequency with the target frequency, and adjust the next output frequency. Adjust the frequency of the resonator so that the output frequency of the resonator can be locked near the target frequency.
  • the phase-locked loop needs a relatively long time to lock the frequency output by the resonator near the target frequency, or even phase-lock The ring cannot lock the frequency output by the resonator near the target frequency, thus causing interruption of the communication service of the device where the resonator is located.
  • the resonator in this solution can alleviate or even avoid frequency hopping, which is conducive to quickly locking the output frequency of the resonator near the target frequency, so as to ensure the normal operation of the communication service of the device where the resonator is located, and can also reduce or even avoid resonance.
  • the phase-locked loop of the device loses lock.
  • At least one of the first surface and the second surface of the substrate of the resonator includes a slope, and the slope is not parallel to other surfaces, for example, the slope and the piezoelectric layer are not parallel, and the slope and the electrode layer are also not parallel. If they are not parallel, the sound waves between the slope and other surfaces will be reflected to the side of the resonator and leak after multiple transmissions, so that the spurious vibration modes generated by these sound waves can be effectively suppressed. Once the spurious vibration mode is effectively suppressed, the interference caused by the spurious vibration mode to the effective vibration mode can be weakened, so that the frequency jump of the resonator can be alleviated or even avoided.
  • the embodiment of the present application also provides a resonator.
  • the resonant layer 2 may include a piezoelectric layer 21 and two electrode layers 22 as described above, and the piezoelectric layer 21 is located between the two electrode layers 22 .
  • the resonator may also include a reflective layer 3 located between the substrate 1 and the resonant layer 2 .
  • the upper surface of the resonant layer 2 away from the base 1 may also be covered with a reflective layer.
  • At least one of the first surface and the second surface of the substrate 1 includes a curved surface 13, wherein the first surface and the second surface are opposite to each other, and the curved surface 13 can promote sound waves incident on the curved surface 13.
  • the poly is reflected in a direction close to the side of the resonator.
  • the arc surface 13 may be a curved surface not parallel to the piezoelectric layer 21, for example, the upper surface of the piezoelectric layer 21 away from the substrate 1 is parallel to the lower surface close to the substrate 1, and the upper surface of the arc surface 13 and the piezoelectric layer 21 The surfaces are not parallel.
  • the second surface of the base 1 includes an arc 13, and for example, as shown in Figure 13, the first surface of the base 1 includes an arc 13, in this case, due to the The electrode layer 22 is in contact with the substrate 1 , so the lower surface of the electrode layer 22 below is a curved surface matching the first surface of the substrate 1 .
  • the first surface or the second surface of the substrate 1 includes the curved surface 13
  • the second surface including the curved surface 13 may be used as an example.
  • the second surface (i.e. the lower surface) of the substrate 1 includes a curved surface 13, and the curved surface 13 is not parallel to other layers of the resonator, so, as shown in Figure 14, the curved surface 13 and other layers
  • the sound waves between the surfaces will be reflected to the side of the resonator, leak outward through the side of the resonator, and be attenuated, making it difficult to communicate between the arc surface 13 and other layers of the resonator.
  • Standing waves are formed, and the spurious vibration modes generated by these standing waves can be effectively suppressed. Once the spurious vibration mode is effectively suppressed, the interference of the spurious vibration mode on the effective vibration mode can be weakened, so that the frequency jump of the resonator can be alleviated or even avoided.
  • solid line arrow represents the acoustic wave propagating in piezoelectric layer 21, is the sound wave that does not need attenuation, and dotted line arrow among Fig. ) The sound wave propagating between is the sound wave that needs to be attenuated.
  • At least one of the first surface and the second surface of the substrate 1 may be an arc surface 13, or, at least one of the first surface and the second surface of the substrate 1, on the corresponding resonant layer 2
  • the position of the arc surface 13 is the arc surface 13, for example, the position directly below the resonant layer 2 is the arc surface 13, while other positions can be an arc surface or a plane.
  • the arc surface 13 may be a spherical surface or a parabolic surface, and may also be an arched surface or the like.
  • the center of the arc surface 13 protrudes toward the resonator layer 2, and the edge of the arc surface 13 away from the center is away from the resonance layer 2, so that the sound wave incident on the arc surface 13 is reflected to the side of the resonator and leaks. .
  • At least one of the first surface and the second surface of the substrate 1 may also include a curved surface and a flat surface at a position corresponding to the resonant layer 2 .
  • at least one of the first surface and the second surface of the substrate 1 includes an arc surface 13 and a second plane 14 at a position corresponding to the resonant layer 2 .
  • the fifth side of the arc surface 13 and the fifth side of the second plane 14 intersect at the third intersection line 13-14, the third intersection line 13-14 is close to the resonant layer 2, and the sixth side of the arc surface 13
  • the side 131 is away from the resonant layer 2, and the sixth side 131 is the side opposite to the position of the third intersection line 13-14.
  • the second surface of the substrate 1 includes an arc surface 13 and a second plane 14 directly below the resonant layer 2, and the arc surface 13 and the second plane 14 intersect at a third intersection line 13-14, and the third intersection line 13- 14 is close to the resonant layer 2 and parallel to the resonant layer 2 , while the side of the arc surface 13 opposite to the third intersection line 13 - 14 is far away from the resonant layer 2 and parallel to the resonant layer 2 .
  • whether the surface of the substrate 1 at the position corresponding to the resonant layer 2 is an arc surface 13 or includes an arc surface 13 and a second plane 14 is not specifically limited, and can be flexibly selected.
  • At least one of the first surface and the second surface of the substrate 1 may include the aforementioned inclined surface 11 and arc surface 13 at a position corresponding to the resonant layer 2 .
  • the same surface of the base 1 includes both the inclined surface 11 and the curved surface 13 .
  • one surface of the substrate 1 includes a slope 11, and the other surface includes a curved surface 13.
  • the first surface of the substrate 1 includes a slope 11 at a position corresponding to the resonant layer 2, and the second surface of the substrate 1 is at a position corresponding to the resonant layer 2.
  • the location includes arcuate surface 13 .
  • the inclined surface 11 or the curved surface 13 they can encourage the incident sound wave to reflect toward the side close to the resonator, so that the sound wave leaks or diffuses, and gradually attenuates. Once these sound waves are attenuated, the spurious vibration modes generated by these sound waves can be effectively suppressed, thereby alleviating the interference of the parasitic vibration modes on the effective vibration modes, thereby alleviating the frequency hopping of the resonator during operation.
  • At least one of the first surface and the second surface of the substrate of the resonator includes an arc surface, and the arc surface is not parallel to other surfaces, for example, the arc surface and the piezoelectric layer are not parallel, and the arc surface is not parallel to the piezoelectric layer. If the surface and the electrode layer are not parallel, the sound waves between the arc surface and other surfaces will be reflected to the side of the resonator and leak after multiple transmissions, and the spurious vibration modes generated by these sound waves can be effectively suppressed. Once the spurious vibration mode is effectively suppressed, the interference caused by the spurious vibration mode to the effective vibration mode can be weakened, so that the frequency jump of the resonator can be alleviated or even avoided.
  • the embodiment of the present application also provides an electronic component.
  • the electronic component may be any component related to frequency, for example, it may be a clock oscillator or a filter.
  • the electronic component includes the above-mentioned resonator, at least one of the first surface and the second surface of the substrate includes a slope, and the slope is not parallel to other surfaces, for example, the slope is not parallel to the piezoelectric layer, and the slope and the piezoelectric layer are not parallel. If the electrode layers are not parallel, the sound waves between the inclined plane and other surfaces will be reflected to the side of the resonator and leak after multiple transmissions, and the spurious vibration modes generated by these sound waves can be effectively suppressed. Once the spurious vibration mode is effectively suppressed, the interference caused by the spurious vibration mode to the effective vibration mode can be weakened, so that the frequency jump of the resonator can be alleviated or even avoided.

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Abstract

The present application relates to the technical field of communications, and discloses a resonator and an electronic component. The resonator comprises a substrate and a resonant layer, and the resonant layer is located on a first surface of the substrate; at least one of the first surface and a second surface of the substrate comprises an inclined surface, and the positions of the first surface and the second surface are opposite; the inclined surface is configured to reflect acoustic waves incident onto the inclined surface in a direction close to a side of the resonator. By using the present application, the inclined surface is not parallel to other surfaces, and then the acoustic waves between the inclined surface and the other surfaces will be reflected to the side of the resonator after transmitted multiple times and leak, thereby effectively suppressing the spurious vibration mode generated by these acoustic waves. Moreover, once the spurious vibration mode is effectively suppressed, the interference caused by the spurious vibration mode on an effective vibration mode can be weakened, so that the frequency hopping of the resonator can be alleviated or even avoided.

Description

谐振器和电子元器件Resonators and Electronic Components
本公开要求于2021年09月23日提交的申请号为202111116400.5、发明名称为“谐振器和电子元器件”的中国专利申请的优先权,其全部内容通过引用结合在本申请中。This disclosure claims the priority of the Chinese patent application with the application number 202111116400.5 and the title of the invention "resonator and electronic components" filed on September 23, 2021, the entire contents of which are incorporated in this application by reference.
技术领域technical field
本申请涉及通信技术领域,特别涉及一种谐振器和电子元器件。The present application relates to the technical field of communication, in particular to a resonator and electronic components.
背景技术Background technique
谐振器是一种用于产生谐振频率的元件,广泛应用于涉及到频率的电子元器件,例如,应用到时钟振荡器和滤波器等电子元器件。A resonator is a component used to generate a resonant frequency and is widely used in electronic components related to frequency, for example, it is applied to electronic components such as clock oscillators and filters.
谐振器的工作原理是,其压电层在驱动电压的作用下会发生机械振动,而在机械振动下又会向外输出电信号。例如,压电层在机械振动中,振动频率和固有频率(也称谐振频率)相差较远的机械振动逐渐被衰减掉,振动频率和固有频率接近的机械振动逐渐被保留下来,最终由这部分机械振动向外输出频率较稳定的电信号。The working principle of the resonator is that its piezoelectric layer will undergo mechanical vibration under the action of a driving voltage, and will output an electrical signal under the mechanical vibration. For example, in the mechanical vibration of the piezoelectric layer, the mechanical vibration whose vibration frequency is far from the natural frequency (also called resonance frequency) is gradually attenuated, and the mechanical vibration whose vibration frequency is close to the natural frequency is gradually retained, and finally by this part The mechanical vibration outputs an electrical signal with a relatively stable frequency.
但是谐振器在工作中,会发生频率跳变的情况,而导致谐振器向外输出的电信号的频率的稳定性较差。However, when the resonator is in operation, frequency hopping may occur, which leads to poor stability of the frequency of the electrical signal output by the resonator.
发明内容Contents of the invention
本申请提供了一种谐振器和电子元器件,能够缓解相关技术中谐振器的频率跳变的问题,所述技术方案如下:The present application provides a resonator and electronic components, which can alleviate the problem of frequency hopping of the resonator in the related art, and the technical solution is as follows:
一方面,提供了一种谐振器,所述谐振器包括基底和谐振层,所述谐振层位于所述基底的第一表面;In one aspect, a resonator is provided, the resonator includes a base and a resonant layer, the resonant layer is located on a first surface of the base;
所述基底的第一表面和第二表面中的至少一个表面包括斜面,所述第一表面和所述第二表面的位置相对;At least one of the first surface and the second surface of the substrate includes a slope, and the first surface and the second surface are opposite to each other;
所述斜面被配置为使入射至所述斜面的声波向靠近所述谐振器侧部的方向反射。The slope is configured to reflect sound waves incident on the slope toward a direction closer to a side of the resonator.
例如,基底的第一表面包括斜面,或者,基底的第二表面包括斜面,或者,基底的第一表面和第二表面均包括斜面。For example, the first surface of the substrate includes a slope, or the second surface of the substrate includes a slope, or both the first surface and the second surface of the substrate include a slope.
本申请所示的方案,基底的第一表面和第二表面中的至少一个表面包括斜面,斜面与其它表面都不平行,例如,斜面和压电层不平行,斜面和电极层也不平行,那么斜面与其它表面之间的声波经过多次传输以后会反射至谐振器的侧部而发生泄漏,进而能够有效抑制这些声波产生的寄生振动模式。而一旦寄生振动模式得到有效抑制,便能减弱寄生振动模式对有效振动模式产生的干扰,从而,能够缓解甚至避免谐振器的频率跳变。In the solution shown in the present application, at least one of the first surface and the second surface of the substrate includes a slope, and the slope is not parallel to other surfaces, for example, the slope is not parallel to the piezoelectric layer, and the slope is not parallel to the electrode layer. Then, the sound waves between the inclined plane and other surfaces will be reflected to the side of the resonator and leak after multiple transmissions, so that the spurious vibration modes generated by these sound waves can be effectively suppressed. Once the spurious vibration mode is effectively suppressed, the interference caused by the spurious vibration mode to the effective vibration mode can be weakened, so that the frequency jump of the resonator can be alleviated or even avoided.
在一种可能的实现方式中,所述基底的第一表面和第二表面中的至少一个表面,在对应所述谐振层的位置为斜面。In a possible implementation manner, at least one of the first surface and the second surface of the substrate is a slope at a position corresponding to the resonant layer.
例如,基底的第二表面为斜面,那么,斜面的具有高度差的两边分别位于基底的位置相对的两侧。或者,基底的第二表面在对应谐振层的位置处为斜面,而在其他位置处为平面, 例如,基底的第二表面的面积比较大,可以在谐振层的正下方为斜面,而其他位置为平面,平面是与谐振层的上表面平行的面,那么,斜面的具有高度差的两边分别位于谐振层的第一侧面所在平面和谐振层的第二侧面所在平面,谐振层的第一侧面和第二侧面的位置相对。For example, if the second surface of the base is an inclined plane, then the two sides of the inclined plane having a height difference are respectively located on opposite sides of the base. Or, the second surface of the base is an inclined plane at the position corresponding to the resonant layer, while it is a plane at other positions. is a plane, and the plane is a plane parallel to the upper surface of the resonant layer, then, the two sides with height difference of the inclined plane are respectively located in the plane where the first side of the resonant layer is located and the plane where the second side of the resonant layer is located, and the first side of the resonant layer Opposite to the position of the second side.
其中,基底的第一表面为斜面,或者,第二表面为斜面,或者第一表面和第二表面均为斜面的情况,便于加工,能够提高谐振器的加工效率。Wherein, the first surface of the base is inclined, or the second surface is inclined, or both the first surface and the second surface are inclined, which facilitates processing and improves the processing efficiency of the resonator.
在一种可能的实现方式中,所述基底的第一表面和第二表面中的至少一个表面,在对应所述谐振层的位置包括第一斜面和第二斜面;In a possible implementation manner, at least one of the first surface and the second surface of the substrate includes a first slope and a second slope at a position corresponding to the resonant layer;
所述第一斜面的第一边和所述第二斜面的第一边相交于第一交线,且所述第一交线靠近所述谐振层,第一斜面的第二边和第二斜面的第二边均远离所述谐振层,所述第二边为与所述第一交线的位置相对的边。The first side of the first slope and the first side of the second slope intersect on a first intersection line, and the first intersection line is close to the resonant layer, the second side of the first slope and the second slope The second side of each is far away from the resonant layer, and the second side is the side opposite to the position of the first intersection line.
本申请所示的方案,入射至第一斜面的声波逐渐反射至第一斜面的第二边的位置处而衰减,入射至第二斜面的声波逐渐反射至第二斜面的第二边的位置处而衰减,从而可以达到抑制这些声波产生的寄生振动模式的效果。In the solution shown in this application, the sound waves incident on the first slope are gradually reflected to the position of the second side of the first slope and attenuated, and the sound waves incident to the second slope are gradually reflected to the position of the second side of the second slope And attenuation, so that the effect of suppressing the spurious vibration modes generated by these sound waves can be achieved.
在一种可能的实现方式中,所述基底的第一表面和第二表面中的至少一个表面,在对应所述谐振层的位置包括第三斜面和第一平面;In a possible implementation manner, at least one of the first surface and the second surface of the substrate includes a third slope and a first plane at a position corresponding to the resonant layer;
所述第三斜面的第三边和所述第一平面的第三边相交于第二交线,且所述第二交线靠近所述谐振层,所述第三斜面的第四边远离所述谐振层,所述第四边为与所述第二交线的位置相对的边。The third side of the third slope and the third side of the first plane intersect at a second intersection line, and the second intersection line is close to the resonant layer, and the fourth side of the third slope is far away from the In the resonant layer, the fourth side is the side opposite to the position of the second intersection line.
本申请所示的方案,入射至第三斜面的声波能够向靠近第三斜面的第四边处反射而发生泄漏被衰减掉,从而能够抑制这些声波产生的寄生振动模式。In the solution shown in the present application, the sound waves incident on the third slope can be reflected to the fourth side close to the third slope to be leaked and attenuated, so that the spurious vibration modes generated by these sound waves can be suppressed.
在一种可能的实现方式中,所述谐振层包括压电层和两个电极层,所述压电层位于所述两个电极层之间。In a possible implementation manner, the resonance layer includes a piezoelectric layer and two electrode layers, and the piezoelectric layer is located between the two electrode layers.
本申请所示的方案,压电层也可以称为压电薄膜,电极层也可以称为金属电极,由于两个电极层一个位于压电层的上方,另一个位于压电层的下方,所以两个电极层也可以称为上电极和下电极。In the solution shown in this application, the piezoelectric layer can also be called a piezoelectric film, and the electrode layer can also be called a metal electrode. Since one of the two electrode layers is located above the piezoelectric layer, and the other is located below the piezoelectric layer, so The two electrode layers may also be referred to as upper and lower electrodes.
这样,基底、其中一个电极层、压电层和另一个电极层依次叠加排布。In this way, the substrate, one of the electrode layers, the piezoelectric layer and the other electrode layer are stacked and arranged in sequence.
在一种可能的实现方式中,基底的第一表面和第二表面中的至少一个表面,在对应谐振层的位置可以包括斜面和弧面。In a possible implementation manner, at least one of the first surface and the second surface of the substrate may include a slope and an arc at a position corresponding to the resonant layer.
例如,基底的第一表面或者第二表面均包括斜面和弧面。又例如,基底的第一表面包括斜面,基底的第二表面包括弧面。又例如,基底的第一表面包括弧面,基底的第二表面包括斜面。For example, either the first surface or the second surface of the substrate includes slopes and arcs. For another example, the first surface of the base includes a slope, and the second surface of the base includes an arc. For another example, the first surface of the base includes a curved surface, and the second surface of the base includes a slope.
无论是斜面还是弧面,均能够促使入射的声波向靠近谐振器侧部的方向反射,以使声波发生泄漏或者扩散,而逐渐衰减。这些声波一旦得到衰减,并能够有效抑制这些声波产生的寄生振动模式,从而缓解寄生振动模式对有效振动模式产生的干扰,进而缓解谐振器在工作中出现频率跳变的情况。Whether it is an inclined surface or an arc surface, it can encourage the incident sound wave to reflect toward the side of the resonator, so that the sound wave leaks or diffuses, and gradually attenuates. Once these sound waves are attenuated, the spurious vibration modes generated by these sound waves can be effectively suppressed, thereby alleviating the interference of the parasitic vibration modes on the effective vibration modes, thereby alleviating the frequency hopping of the resonator during operation.
另一方面,提供了一种谐振器,所述谐振器包括基底和谐振层,所述谐振层位于所述基底的第一表面;In another aspect, a resonator is provided, the resonator includes a substrate and a resonant layer, the resonant layer is located on the first surface of the substrate;
所述基底的第一表面和第二表面中的至少一个表面包括弧面,所述第一表面和所述第二 表面的位置相对;At least one of the first surface and the second surface of the base includes an arc surface, and the positions of the first surface and the second surface are opposite;
所述弧面被配置为使入射至所述弧面的声波向靠近所述谐振器侧部的方向反射。The arcuate surface is configured to reflect sound waves incident on the arcuate surface in a direction close to the side of the resonator.
本申请所示的方案,该谐振器的基底的第一表面和第二表面中的至少一个表面包括弧面,弧面与其它表面都不平行,例如,弧面和压电层不平行,弧面和电极层也不平行,那么弧面与其它表面之间的声波经过多次传输以后会反射至谐振器侧部而发生泄漏,进而能够有效抑制这些声波产生的寄生振动模式。而一旦寄生振动模式得到有效抑制,便能减弱寄生振动模式对有效振动模式产生的干扰,从而,能够缓解甚至避免谐振器的频率跳变。In the solution shown in the present application, at least one of the first surface and the second surface of the substrate of the resonator includes an arc surface, and the arc surface is not parallel to other surfaces, for example, the arc surface and the piezoelectric layer are not parallel, and the arc surface is not parallel to the piezoelectric layer. If the surface and the electrode layer are not parallel, the sound waves between the arc surface and other surfaces will be reflected to the side of the resonator and leak after multiple transmissions, and the spurious vibration modes generated by these sound waves can be effectively suppressed. Once the spurious vibration mode is effectively suppressed, the interference caused by the spurious vibration mode to the effective vibration mode can be weakened, so that the frequency jump of the resonator can be alleviated or even avoided.
在一种可能的实现方式中,所述基底的第一表面和第二表面中的至少一个表面,在对应所述谐振层的位置为弧面。In a possible implementation manner, at least one of the first surface and the second surface of the substrate is an arc surface at a position corresponding to the resonant layer.
本申请所示的方案,弧面的中心位置凸向谐振层,弧面的远离中心的边缘远离谐振层,使得入射至弧面的声波向谐振器的侧部反射而发生泄漏。In the solution shown in this application, the center of the arc surface protrudes toward the resonator layer, and the edge of the arc surface away from the center is away from the resonance layer, so that the sound waves incident on the arc surface are reflected to the side of the resonator and leak.
在一种可能的实现方式中,所述基底的第一表面和第二表面中的至少一个表面,在对应所述谐振层的位置包括弧面和第二平面;In a possible implementation manner, at least one of the first surface and the second surface of the substrate includes an arc surface and a second plane at a position corresponding to the resonant layer;
所述弧面的第五边和所述第二平面的第五边相交于第三交线,所述第三交线靠近所述谐振层,所述弧面的第六边远离所述谐振层,所述第六边为与所述第三交线的位置相对的边。The fifth side of the arcuate surface and the fifth side of the second plane intersect at a third intersection line, the third intersection line is close to the resonant layer, and the sixth side of the arcuate surface is far away from the resonant layer , the sixth side is the side opposite to the position of the third intersection line.
例如,基底的第二表面在谐振层的正下方位置包括弧面和第二平面,弧面和第二平面相交于第三交线,第三交线靠近谐振层且和谐振层平行,而弧面的与第三交线位置相对的边远离谐振层且与谐振层平行。For example, the second surface of the substrate includes an arc surface and a second plane directly below the resonant layer, the arc surface and the second plane intersect at a third intersection line, the third intersection line is close to the resonator layer and parallel to the resonator layer, and the arc The side of the surface opposite to the position of the third intersection line is away from the resonant layer and parallel to the resonant layer.
这样,入射至弧面的声波向弧面的远离谐振器中心的位置反射而发生泄漏被衰减掉,从而能够抑制这些声波产生的寄生振动模式。In this way, the sound waves incident on the arc surface are reflected to the position away from the center of the resonator on the arc surface to be leaked and attenuated, so that the spurious vibration modes generated by these sound waves can be suppressed.
在一种可能的实现方式中,所述弧面为球面或抛物面,还可以是拱形面等。In a possible implementation manner, the curved surface is a spherical surface or a parabolic surface, and may also be an arched surface or the like.
在一种可能的实现方式中,基底的第一表面和第二表面中的至少一个表面,在对应谐振层的位置包括斜面和弧面,斜面和弧面均用于使入射的声波向靠近谐振器侧部的方向反射。In a possible implementation manner, at least one of the first surface and the second surface of the substrate includes an inclined surface and an arc surface at a position corresponding to the resonant layer, and both the inclined surface and the arc surface are used to make the incident sound wave approach the resonance direction reflection from the side of the device.
例如,基底的第一表面或者第二表面均包括斜面和弧面。又例如,基底的第一表面包括斜面,基底的第二表面包括弧面。又例如,基底的第一表面包括弧面,基底的第二表面包括斜面。For example, either the first surface or the second surface of the substrate includes slopes and arcs. For another example, the first surface of the base includes a slope, and the second surface of the base includes an arc. For another example, the first surface of the base includes a curved surface, and the second surface of the base includes a slope.
无论是斜面还是弧面,均能够促使入射的声波向靠近谐振器的侧部的方向反射,以使声波发生泄漏或者扩散,而逐渐衰减。这些声波一旦得到衰减,并能够有效抑制这些声波产生的寄生振动模式,从而缓解寄生振动模式对有效振动模式产生的干扰,进而缓解谐振器在工作中出现频率跳变的情况。Whether it is an inclined surface or an arc surface, it can promote the reflection of the incident sound wave to the direction close to the side of the resonator, so that the sound wave leaks or diffuses, and gradually attenuates. Once these sound waves are attenuated, the spurious vibration modes generated by these sound waves can be effectively suppressed, thereby alleviating the interference of the parasitic vibration modes on the effective vibration modes, thereby alleviating the frequency hopping of the resonator during operation.
另一方面,提供了一种电子元器件,所述电子元器件包括上述所述的谐振器。In another aspect, an electronic component is provided, and the electronic component includes the above-mentioned resonator.
本申请所示的方案,该电子元器件包括上述所述的谐振器,其基底的第一表面和第二表面中的至少一个表面包括斜面,斜面与其它表面都不平行,例如,斜面和压电层不平行,斜面和电极层也不平行,那么斜面与其它表面之间的声波经过多次传输以后会反射至谐振器的侧部而发生泄漏,进而能够有效抑制这些声波产生的寄生振动模式。而一旦寄生振动模式得到有效抑制,便能减弱寄生振动模式对有效振动模式产生的干扰,从而,能够缓解甚至避免谐振器的频率跳变。In the solution shown in this application, the electronic component includes the above-mentioned resonator, at least one of the first surface and the second surface of the substrate includes a slope, and the slope is not parallel to other surfaces, for example, the slope and the pressure The electric layer is not parallel, and the slope and the electrode layer are not parallel, so the sound waves between the slope and other surfaces will reflect to the side of the resonator after multiple transmissions and leak, which can effectively suppress the spurious vibration modes generated by these sound waves . Once the spurious vibration mode is effectively suppressed, the interference caused by the spurious vibration mode to the effective vibration mode can be weakened, so that the frequency jump of the resonator can be alleviated or even avoided.
附图说明Description of drawings
图1是一种常规的谐振器的结构示意图;Fig. 1 is a structural schematic diagram of a conventional resonator;
图2是一种常规的谐振器的结构示意图;Fig. 2 is a structural schematic diagram of a conventional resonator;
图3是本申请提供的一种谐振器的结构示意图;Fig. 3 is a schematic structural diagram of a resonator provided by the present application;
图4是本申请提供的一种谐振器的结构示意图;Fig. 4 is a schematic structural diagram of a resonator provided by the present application;
图5是本申请提供的一种谐振器的结构示意图;FIG. 5 is a schematic structural diagram of a resonator provided by the present application;
图6是本申请提供的一种谐振器的结构示意图;FIG. 6 is a schematic structural diagram of a resonator provided by the present application;
图7是本申请提供的一种声波在谐振器中传播的示意图;Fig. 7 is a schematic diagram of a sound wave propagating in a resonator provided by the present application;
图8是本申请提供的一种谐振器的结构示意图;Fig. 8 is a schematic structural diagram of a resonator provided by the present application;
图9是本申请提供的一种谐振器的结构示意图;FIG. 9 is a schematic structural diagram of a resonator provided by the present application;
图10是本申请提供的一种谐振器的结构示意图;FIG. 10 is a schematic structural diagram of a resonator provided by the present application;
图11是本申请提供的一种谐振器的结构示意图;FIG. 11 is a schematic structural diagram of a resonator provided by the present application;
图12是本申请提供的一种谐振器的结构示意图;Fig. 12 is a schematic structural diagram of a resonator provided by the present application;
图13是本申请提供的一种谐振器的结构示意图;Fig. 13 is a schematic structural diagram of a resonator provided by the present application;
图14是本申请提供的一种声波在谐振器中传播的示意图;Fig. 14 is a schematic diagram of a sound wave propagating in a resonator provided by the present application;
图15是本申请提供的一种谐振器的结构示意图。Fig. 15 is a schematic structural diagram of a resonator provided by the present application.
图例说明illustration
1、基底;11、斜面;12、第一平面;13、弧面;14、第二平面;1. Base; 11. Slope; 12. First plane; 13. Arc; 14. Second plane;
11a、第一斜面;11b、第二斜面;11c、第三斜面;11a, the first slope; 11b, the second slope; 11c, the third slope;
111、第一交线;112、第二边;113、第四边;111, the first intersection line; 112, the second side; 113, the fourth side;
131、第六边;11-12、第二交线;13-14、第三交线;131, the sixth side; 11-12, the second intersection line; 13-14, the third intersection line;
2、谐振层;21、压电层;22、电极层;2. Resonant layer; 21. Piezoelectric layer; 22. Electrode layer;
3、反射层。3. Reflective layer.
具体实施方式Detailed ways
本申请实施例提供了一种谐振器,谐振器是一种用于产生谐振频率的元件,例如,能够利用声波谐振实现电学选频,可以广泛应用在涉及到频率的电子元器件中,例如,可以应用在时钟振荡器和滤波器等电子元器件中。The embodiment of the present application provides a resonator. A resonator is a component used to generate a resonant frequency. For example, it can use acoustic resonance to realize electrical frequency selection, and can be widely used in electronic components related to frequency. For example, It can be used in electronic components such as clock oscillators and filters.
该谐振器可以是体声波(bulk acoustic wave,BAW)谐振器,BAW谐振器是一种利用体声波谐振产生频率的器件。体声波是一种在物体内部传播的声波,如在物体的两个位置相对的表面之间来回传播的声波,体声波与表面声波(surface acoustic wave,SAW)的概念相对,表面声波是一种沿着固体表面传播的声波,通过表面声波谐振产生频率的器件可以称为SAW谐振器。The resonator may be a bulk acoustic wave (bulk acoustic wave, BAW) resonator, and the BAW resonator is a device that generates frequencies using bulk acoustic wave resonance. Bulk acoustic wave is an acoustic wave that propagates inside an object, such as an acoustic wave that travels back and forth between two opposite surfaces of an object. Bulk acoustic wave is opposite to the concept of surface acoustic wave (SAW), and surface acoustic wave is a kind of Acoustic waves propagating along a solid surface, devices that generate frequencies through surface acoustic wave resonance can be called SAW resonators.
该谐振器最基本的结构是,如图1所示,主要包括基底1和谐振层2,谐振层2位于基底1的表面,基底1也可以称为衬底,用于支撑谐振层2。谐振层2主要包括压电层21和两个电极层22,压电层21位于两个电极层22之间,形成类似三明治结构。The most basic structure of the resonator is, as shown in FIG. 1 , mainly including a base 1 and a resonant layer 2. The resonant layer 2 is located on the surface of the base 1. The base 1 can also be called a substrate for supporting the resonant layer 2. The resonant layer 2 mainly includes a piezoelectric layer 21 and two electrode layers 22, and the piezoelectric layer 21 is located between the two electrode layers 22, forming a similar sandwich structure.
其中,压电层21也可以称为压电薄膜(piezo layer)。电极层22也可以称为金属电极,两个电极层22一个作为正极,另一个作为负极。由于两个电极层22一个位于压电层21的上方,另一个位于压电层21的下方,故两个电极层也可以分别称为上电极(top electrode)和 下电极(bottom electrode)。Wherein, the piezoelectric layer 21 may also be called a piezoelectric film (piezo layer). The electrode layer 22 can also be referred to as a metal electrode, and one of the two electrode layers 22 is used as a positive electrode, and the other is used as a negative electrode. Since one of the two electrode layers 22 is located above the piezoelectric layer 21 and the other is located below the piezoelectric layer 21, the two electrode layers can also be called top electrode and bottom electrode respectively.
这样,如图1所示,基底1、其中一个电极层22、压电层22和另一个电极层22依次叠加排布。In this way, as shown in FIG. 1 , the substrate 1 , one of the electrode layers 22 , the piezoelectric layer 22 and the other electrode layer 22 are stacked and arranged in sequence.
在一种示例中,关于基底1和谐振层2的面积关系,在一种示例中,基底1的面积可以与谐振层2的面积相等。在另一种示例中,如图1所示,基底1的面积也可以远大于谐振层2的面积。其中,关于基底1的面积和谐振层2的面积关系不做限定,可以灵活设计。In one example, regarding the area relationship between the substrate 1 and the resonant layer 2 , in one example, the area of the substrate 1 may be equal to the area of the resonant layer 2 . In another example, as shown in FIG. 1 , the area of the substrate 1 may also be much larger than the area of the resonant layer 2 . Wherein, the relationship between the area of the substrate 1 and the area of the resonant layer 2 is not limited, and can be flexibly designed.
关于谐振层2的压电层21和电极层22的面积关系,在一种示例中,压电层21和两个电极层22的面积可以均相等。在另一种示例中,如图1所示,压电层21的面积和远离基底1的电极层22的面积相等,而压电层21的面积小于靠近基底1的电极层22的面积,而靠近基底1的电极层22的面积可以等于基底1的面积,也可以小于基底1的面积。Regarding the area relationship between the piezoelectric layer 21 and the electrode layer 22 of the resonance layer 2 , in an example, the areas of the piezoelectric layer 21 and the two electrode layers 22 may be equal. In another example, as shown in FIG. 1, the area of the piezoelectric layer 21 is equal to the area of the electrode layer 22 away from the substrate 1, and the area of the piezoelectric layer 21 is smaller than the area of the electrode layer 22 close to the substrate 1, and The area of the electrode layer 22 close to the substrate 1 may be equal to or smaller than the area of the substrate 1 .
其中,本实施例对基底1的面积、压电层21的面积以及两个电极层22的面积之间的具体关系不做具体限定,可以灵活设计。Wherein, this embodiment does not specifically limit the specific relationship among the area of the substrate 1 , the area of the piezoelectric layer 21 and the areas of the two electrode layers 22 , and it can be flexibly designed.
在一种示例中,压电层21作为谐振器的核心部件,由压电材料制成,具有压电效应,压电效应也即是,压电层21的位置相对的两个表面加电压时,会发生轻微形变,而产生声波,相反,压电层21受到压力时,会产生电压。例如,压电层21产生声波以及电压的原理可以如下:In one example, the piezoelectric layer 21, as the core component of the resonator, is made of piezoelectric material and has a piezoelectric effect. The piezoelectric effect is that when a voltage is applied to the two opposite surfaces of the piezoelectric layer 21 , a slight deformation will occur to generate sound waves, on the contrary, when the piezoelectric layer 21 is under pressure, a voltage will be generated. For example, the principle of the piezoelectric layer 21 generating sound waves and voltages can be as follows:
当两个电极层22之间具有电场时,由于压电层21内部受到电压,为了保持电荷平衡,内部的原子来回振动使压电层21的形状发生形变,从而在压电层21的内部产生声波,该过程可以称为逆压电效应,实现电能向机械能的转换。而声波在压电层21的内部传播时,一些原子间距会变得更近或者更远,打乱了原来保持的平衡,出现净电荷,净电荷也即是,物体或其一部分所带的未被抵消的电荷,那么,压电层21的表面就会出现正电荷和负电荷,从而产生电信号,该过程可以称为压电效应,实现机械能向电能的转换。When there is an electric field between the two electrode layers 22, since the piezoelectric layer 21 is subjected to a voltage, in order to maintain charge balance, the atoms inside vibrate back and forth to deform the shape of the piezoelectric layer 21, thereby generating Sound waves, a process that can be called the inverse piezoelectric effect, realize the conversion of electrical energy into mechanical energy. When the sound wave propagates inside the piezoelectric layer 21, the distance between some atoms will become closer or farther, disturbing the original balance, and a net charge will appear. If the charges are offset, positive and negative charges will appear on the surface of the piezoelectric layer 21, thereby generating electrical signals. This process can be called piezoelectric effect, which realizes the conversion of mechanical energy into electrical energy.
如上述所述,波谐振器是一种利用声波谐振实现电学选频的器件,其原理可以如下,其中,谐振又称共振,是一种物体振动时的振动频率和物体的固有频率相同或者接近时,物体的振幅急剧增大的现象,产生谐振时的频率可以称为谐振频率。那么,压电层21在电压作用下振动时,和固有频率相差较远的振动逐渐被衰减掉,而和固定频率相同或接近的振动被保留下来,最终压电层21在谐振频率下发生振动,那么在该谐振频率下产生的电信号也是频率较为纯净的电信号,进而声波谐振实现电学选频。As mentioned above, a wave resonator is a device that uses acoustic resonance to achieve electrical frequency selection. Its principle can be as follows. Among them, resonance is also called resonance. , the phenomenon that the amplitude of the object increases sharply, and the frequency at which resonance occurs can be called the resonance frequency. Then, when the piezoelectric layer 21 vibrates under the action of voltage, the vibrations that are far from the natural frequency are gradually attenuated, while the vibrations that are the same or close to the fixed frequency are retained, and finally the piezoelectric layer 21 vibrates at the resonant frequency , then the electrical signal generated at the resonant frequency is also an electrical signal with a relatively pure frequency, and then the acoustic resonance realizes electrical frequency selection.
在一种示例中,为了促使声波在压电层21中来回传播,如图2所示,该谐振器还可以包括反射层3,反射层3位于基底1和谐振层2之间。反射层3用于将入射的声波反射至压电层21中,以尽可能将声波限制在压电层21中,以提高谐振器的品质因数(quality factor,Q)。In one example, in order to promote sound waves to propagate back and forth in the piezoelectric layer 21 , as shown in FIG. 2 , the resonator may further include a reflective layer 3 located between the substrate 1 and the resonant layer 2 . The reflective layer 3 is used to reflect the incident sound wave to the piezoelectric layer 21, so as to confine the sound wave in the piezoelectric layer 21 as much as possible, so as to improve the quality factor (quality factor, Q) of the resonator.
其中,反射层3可以是布拉格反射层,布拉格反射层是采用一系列高低阻抗相间的声学反射层形成的结构,以使声波能够很好的反射至压电层21,将声波限制在压电层21的内部进行传播。Wherein, the reflective layer 3 may be a Bragg reflective layer, and the Bragg reflective layer is a structure formed by adopting a series of high and low impedance acoustic reflective layers alternately, so that the sound wave can be well reflected to the piezoelectric layer 21, and the sound wave is limited to the piezoelectric layer. 21 for internal spread.
其中,反射层3也可以是具有空腔的结构,空腔中具有真空或空气,声阻较大,声波在传输中,遇到反射层3的空腔也能够很好的反射至压电层21中,将声波限制在压电层21的内部进行传播。Wherein, the reflective layer 3 can also be a structure with a cavity. There is a vacuum or air in the cavity, and the acoustic resistance is relatively large. During the transmission, the sound wave encounters the cavity of the reflective layer 3 and can also be well reflected to the piezoelectric layer. In 21, the acoustic wave is confined inside the piezoelectric layer 21 to propagate.
其中,可以将包括布拉格反射层的谐振器称为固态装配谐振器(solid mounted resonator,SMR),将包括具有空腔的反射层的谐振器可以称为薄膜体声波谐振器(film bulk acoustic  resonator,FBAR)。Wherein, the resonator including the Bragg reflection layer can be called a solid mounted resonator (solid mounted resonator, SMR), and the resonator including a reflection layer with a cavity can be called a film bulk acoustic resonator (film bulk acoustic resonator, FBAR).
其中,本实施例对反射层3的具体形式不做限定,可以根据情况灵活选择。Wherein, this embodiment does not limit the specific form of the reflective layer 3, which can be flexibly selected according to the situation.
在一种示例中,反射层3的数量也可以是两个,一个反射层3位于基底1和谐振层2之间,另一个反射层3位于谐振层2的远离基底1的上表面,也即是,谐振层2位于两个反射层3之间。In an example, the number of reflective layers 3 may also be two, one reflective layer 3 is located between the base 1 and the resonant layer 2, and the other reflective layer 3 is located on the upper surface of the resonant layer 2 away from the base 1, that is Yes, the resonant layer 2 is located between two reflective layers 3 .
其中,本实施例对该谐振器是否包括反射层3,以及包括几个反射层3不做限定,可以根据情况灵活选择。Wherein, this embodiment does not limit whether the resonator includes the reflective layer 3 or not, and how many reflective layers 3 it includes, which can be flexibly selected according to the situation.
在一种示例中,该谐振器在工作中,压电层21中传播的声波产生的谐振向外输出的频率为想要的频率,可以称为工作频率,这种声波产生的振动模式可以称为有效振动模式。而其他两个表面之间传播的声波产生的振动向外输出的频率为不想要的频率,可以称为杂频,这种声波产生的振动模式可以称为寄生振动模式。例如,基底1的下表面和谐振层2的上表面之间传播的声波所产生的振动模式可以称为寄生振动模式。In one example, when the resonator is working, the frequency of the resonance output generated by the sound wave propagating in the piezoelectric layer 21 is the desired frequency, which can be called the working frequency, and the vibration mode generated by the sound wave can be called is an effective vibration mode. The frequency of the vibration generated by the sound wave propagating between the other two surfaces is an unwanted frequency, which can be called a spurious frequency, and the vibration mode generated by this sound wave can be called a parasitic vibration mode. For example, vibration modes generated by sound waves propagating between the lower surface of the substrate 1 and the upper surface of the resonant layer 2 may be referred to as spurious vibration modes.
该谐振器在工作中,如果寄生振动模式对有效振动模式产生干扰,则会导致工作频率出现跳变的情况。When the resonator is working, if the parasitic vibration mode interferes with the effective vibration mode, the working frequency will jump.
在一种示例中,在制作谐振器时,可以通过控制基底1、反射层3和谐振层2的厚度等因素,来尽可能减弱甚至避免寄生振动模式对有效振动模式的干扰,但是加工出的谐振器在工作中,所在的环境温度会发生改变,一旦环境温度发生改变,则会影响到基底1、反射层3和谐振层2的厚度,导致寄生振动模式对有效振动模式产生干扰,进一步导致谐振器的工作频率出现跳变的情况。In one example, when making a resonator, the interference of the parasitic vibration mode to the effective vibration mode can be weakened or even avoided as much as possible by controlling the thickness of the substrate 1, the reflective layer 3 and the resonance layer 2, etc., but the processed When the resonator is working, the ambient temperature will change. Once the ambient temperature changes, it will affect the thickness of the substrate 1, reflective layer 3 and resonant layer 2, causing the parasitic vibration mode to interfere with the effective vibration mode, further causing The operating frequency of the resonator jumps.
本方案的谐振器能够通过有效抑制寄生振动模式,来减弱甚至避免寄生振动模式对有效振动模式的干扰,从而缓解谐振器发生频率跳变的情况。The resonator of this solution can reduce or even avoid the interference of the parasitic vibration mode on the effective vibration mode by effectively suppressing the parasitic vibration mode, thereby alleviating the occurrence of frequency jump of the resonator.
如图3并参考图4所示,该谐振器包括基底1和谐振层2,谐振层2位于基底1的表面,例如,可以将谐振层2所在的表面记为第一表面,那么,谐振层2位于基底1的第一表面,基底1的第一表面可以是基底1的上表面,也可以是下表面,本申请示例中,可以以第一表面为基底1的上表面进行示例。As shown in Fig. 3 and with reference to Fig. 4, this resonator comprises base 1 and resonant layer 2, and resonant layer 2 is positioned at the surface of base 1, for example, can be marked as the first surface with resonant layer 2 place surface, so, resonant layer 2 is located on the first surface of the substrate 1. The first surface of the substrate 1 may be the upper surface or the lower surface of the substrate 1. In the examples of this application, the first surface may be used as the upper surface of the substrate 1 for example.
如图3所示,基底1的位置相对的第一表面和第二表面中的至少一个表面包括斜面11。其中,斜面11可以是与谐振层2的压电层21不平行的平面。例如,如图3所示,斜面11可以是与压电层21的远离基底1的上表面不平行的平面,其中,压电层21的远离基底1的上表面和靠近基底1的下表面互为平行。例如,如图3并参考图4所示,斜面11和压电层21之间的夹角为α。As shown in FIG. 3 , at least one of the opposite first and second surfaces of the substrate 1 includes a slope 11 . Wherein, the slope 11 may be a plane not parallel to the piezoelectric layer 21 of the resonance layer 2 . For example, as shown in FIG. 3, the slope 11 may be a plane that is not parallel to the upper surface of the piezoelectric layer 21 away from the substrate 1, wherein the upper surface of the piezoelectric layer 21 away from the substrate 1 and the lower surface close to the substrate 1 are connected to each other. for parallel. For example, as shown in FIG. 3 and referring to FIG. 4 , the angle between the slope 11 and the piezoelectric layer 21 is α.
在一种示例中,如图4所示,基底1的第二表面可以包括斜面11,在另一种示例中,如图5所示,也可以是基底1的第一表面包括斜面11,该情况下,由于位于下方的电极层22和基底1贴合,那么,位于下方的电极层22的远离压电层21的下表面为与基底1的第一表面相适配的斜面。在另一种示例中,也可以是基底1的第一表面和第二表面均包括斜面11。In one example, as shown in FIG. 4, the second surface of the base 1 may include a slope 11. In another example, as shown in FIG. 5, the first surface of the base 1 may also include a slope 11. In some cases, since the electrode layer 22 located below is bonded to the substrate 1 , the lower surface of the electrode layer 22 located below, away from the piezoelectric layer 21 , is an inclined plane matching the first surface of the substrate 1 . In another example, both the first surface and the second surface of the substrate 1 may include a slope 11 .
由于可以将不平行于压电层21的平面称为斜面,那么,如图6所示也为基底1的远离压电层21的第二表面包括斜面11的示意图,只不过如图4所示,压电层21所在平面平行于水平面,而如图6所示,压电层21所在平面不平行于水平面。Since the plane that is not parallel to the piezoelectric layer 21 can be called an inclined plane, then, as shown in FIG. , the plane where the piezoelectric layer 21 is located is parallel to the horizontal plane, but as shown in FIG. 6 , the plane where the piezoelectric layer 21 is located is not parallel to the horizontal plane.
其中,本实施例对基底1的哪一个表面包括斜面11不做限定,可以灵活选择,满足基底 1的第一表面和第二表面中的至少一个表面,与压电层21不平行即可。例如,实施例中可以以基底1的第二表面,也即是,基底1的下表面包括斜面11进行示例。Wherein, in this embodiment, which surface of the substrate 1 includes the slope 11 is not limited, and it can be flexibly selected so that at least one of the first surface and the second surface of the substrate 1 is not parallel to the piezoelectric layer 21. For example, in the embodiment, the second surface of the base 1 , that is, the lower surface of the base 1 including the slope 11 may be used as an example.
如图7所示,斜面11被配置为促使入射至该斜面11的声波向靠近谐振器的侧部的方向反射,例如,反射声波指向基底1的周围边缘。As shown in FIG. 7 , the inclined surface 11 is configured to encourage the reflection of sound waves incident on the inclined surface 11 towards the side of the resonator, for example, the reflected sound waves are directed towards the peripheral edge of the substrate 1 .
如图7所示,基底1的下表面包括斜面11,那么,基底1的下表面和其他各个表面之间的声波(可以称为杂波)经过多次传输以后,会反射至谐振器的侧部,经由谐振器的侧部向外泄露,而被衰减掉。一旦这些杂波被衰减掉,那么,由这些杂波产生的寄生振动模式便能够得到有效的抑制。一旦寄生振动模式被抑制,那么,可以减弱寄生振动模式对有效振动模式产生的干扰,进而可以缓解甚至避免谐振器的频率跳变。As shown in Figure 7, the lower surface of the substrate 1 includes a slope 11, then, the sound waves (which may be called clutter) between the lower surface of the substrate 1 and other surfaces will be reflected to the side of the resonator after multiple transmissions. part, leaks out through the sides of the resonator and is attenuated. Once these clutters are attenuated, the spurious vibration modes generated by these clutters can be effectively suppressed. Once the spurious vibration mode is suppressed, the interference of the spurious vibration mode to the effective vibration mode can be weakened, and then the frequency hopping of the resonator can be alleviated or even avoided.
其中,图7中实线箭头表示在压电层21中传播的声波,是不需要衰减的声波,图7中虚线箭头表示在斜面11和其他表面(如位于上方的电极层22的上表面)之间传播的声波,是需要衰减的声波。Wherein, among Fig. 7, solid line arrow represents the acoustic wave propagating in piezoelectric layer 21, is the sound wave that does not need attenuation, and dotted line arrow among Fig. 7 represents on inclined plane 11 and other surfaces (such as the upper surface of electrode layer 22 being positioned at above) The sound waves propagating between are the sound waves that need to be attenuated.
基于斜面11能够将入射的声波衰减掉,那么斜面11和谐振层2的上表面的夹角α越大,对杂波的衰减效果越好,但是α过大又将会增大谐振器的制造难度,所以可以根据寄生振动模式的抑制情况和谐振器的制造情况,来选择合适的α,例如,α可以取一度左右。Based on the fact that the slope 11 can attenuate the incident sound waves, the larger the angle α between the slope 11 and the upper surface of the resonance layer 2, the better the attenuation effect on clutter, but if α is too large, the manufacturing of the resonator will be increased. Difficulty, so the appropriate α can be selected according to the suppression of the spurious vibration mode and the manufacturing situation of the resonator. For example, α can be about one degree.
在一种示例中,基底1的第一表面和第二表面中的至少一个表面,在对应谐振层2的位置处可以为斜面11。如图3并参考图4所示,斜面11分别与谐振层1的第一侧面所在平面和第二侧面所在平面相交,且交线均与谐振层2的上表面平行,其中,谐振层2的第一侧面和第二侧面的位置相对。In an example, at least one of the first surface and the second surface of the substrate 1 may be a slope 11 at a position corresponding to the resonant layer 2 . As shown in Figure 3 and with reference to Figure 4, the slope 11 intersects the plane where the first side of the resonant layer 1 is located and the plane where the second side is located, and the lines of intersection are all parallel to the upper surface of the resonant layer 2, wherein the resonant layer 2 The positions of the first side and the second side are opposite.
可以以基底1的第二表面(即下表面)进行示例,一种情况可以是,基底1的第二表面为斜面11,可以参见图4所示,那么,斜面11的具有高度差的两边分别位于基底1的位置相对的两侧。另一种情况可以是,基底1的第二表面在对应谐振层2的位置处为斜面11,而在其他位置处为平面,例如,基底1的第二表面的面积比较大,可以在谐振层2的正下方为斜面,而其他位置为平面,平面是与谐振层2的上表面平行的面,那么,斜面11的具有高度差的两边分别位于谐振层2的第一侧面所在平面和谐振层2的第二侧面所在平面,谐振层2的第一侧面和第二侧面的位置相对。The second surface (i.e. the lower surface) of the base 1 can be used as an example. In one case, the second surface of the base 1 is a slope 11, as shown in FIG. Located on opposite sides of the base 1. Another situation can be that the second surface of the base 1 is a slope 11 at the position corresponding to the resonant layer 2, and is a plane at other positions. For example, the second surface of the base 1 has a relatively large area, and can 2 is an inclined plane, and other positions are planes, and the plane is a plane parallel to the upper surface of the resonant layer 2. Then, the two sides of the inclined plane 11 with a height difference are respectively located on the plane where the first side of the resonant layer 2 is located and the resonant layer. In the plane where the second side of the resonant layer 2 is located, the positions of the first side and the second side of the resonant layer 2 are opposite.
基底1的第一表面为斜面11,或者,第二表面为斜面11,或者第一表面和第二表面均为斜面11的情况,便于加工,例如,在加工出基底1以后可以对基底1的表面进行打磨处理,以磨出斜面11。这种包括斜面11的基底1的形状可以为楔形。The first surface of the base 1 is an inclined plane 11, or the second surface is an inclined plane 11, or the first surface and the second surface are both inclined planes 11, which is convenient for processing, for example, after the base 1 is processed, the base 1 can be processed The surface is ground to grind out the bevel 11 . The shape of such a base 1 including the slope 11 may be wedge-shaped.
其中,如果基底1的第一表面为斜面11,那么可以在沉积谐振层2之前,例如,在沉积电极层22之前,对基底1的第一表面进行打磨,以磨出斜面11。而如果基底1的第二表面为斜面,那么可以在沉积谐振层2之前,磨出斜面11,也可以在沉积谐振层2之后,磨出斜面11。Wherein, if the first surface of the substrate 1 is the slope 11 , the first surface of the substrate 1 can be ground to form the slope 11 before depositing the resonant layer 2 , for example, before depositing the electrode layer 22 . And if the second surface of the substrate 1 is a bevel, the bevel 11 can be ground out before the resonant layer 2 is deposited, or the bevel 11 can be ground after the resonant layer 2 is deposited.
基底1的第一表面和第二表面中的至少一个表面,在对应谐振层2的位置为斜面11的方案中,如图7所示,斜面11和其他表面之间的声波逐渐向谐振器的一侧靠近,由谐振器的侧部泄漏而衰减。例如,斜面11和远离基底1的电极层22的上表面之间的声波、斜面11和压电层21的上表面之间的声波、斜面11和压电层21的下表面之间的声波、斜面11和靠近基底1的电极层22的下表面之间的声波,以及斜面11和基底1的上表面之间的声波,都可以逐渐被衰减掉,从而可以抑制这些声波产生的寄生振动模式。At least one of the first surface and the second surface of the substrate 1, in the scheme where the position corresponding to the resonator layer 2 is an inclined plane 11, as shown in FIG. Close to one side, attenuated by side leakage of the resonator. For example, an acoustic wave between the inclined plane 11 and the upper surface of the electrode layer 22 away from the substrate 1, an acoustic wave between the inclined plane 11 and the upper surface of the piezoelectric layer 21, an acoustic wave between the inclined plane 11 and the lower surface of the piezoelectric layer 21, The sound waves between the slope 11 and the lower surface of the electrode layer 22 close to the substrate 1, and the sound waves between the slope 11 and the upper surface of the substrate 1 can be gradually attenuated, so that the spurious vibration modes generated by these sound waves can be suppressed.
在一种示例中,基底1的第一表面和第二表面中的至少一个表面,在对应谐振层2的位置处也可以包括多个斜面,这多个斜面中每个斜面的靠近谐振器的中轴线的边和谐振层2的距离较近,而远离谐振器的中轴线的边和谐振层2的距离较远。这样能够使入射至每个斜面的声波向谐振器的侧部方向反射,然后经由侧部向外泄露和扩散,从而这些声波产生的寄生振动模式能够被有效抑制。In one example, at least one of the first surface and the second surface of the substrate 1 may also include a plurality of slopes at the position corresponding to the resonant layer 2, and each slope of the multiple slopes is close to the resonator. The distance between the edge of the central axis and the resonant layer 2 is relatively short, while the distance between the edge far away from the central axis of the resonator and the resonant layer 2 is relatively long. In this way, the sound waves incident on each slope can be reflected toward the side of the resonator, and then leak and diffuse outward through the side, so that the spurious vibration modes generated by these sound waves can be effectively suppressed.
例如,基底1的第一表面和第二表面中至少一个表面所包括的斜面11的数量可以是两个,分别记为第一斜面11a和第二斜面11b,可以参见图8和图9所示,第一斜面11a的第一边和第二斜面11b的第一边相交于第一交线111,第一交线111和谐振层2的上表面平行,且靠近谐振层2,第一斜面11a的第二边112和第二斜面11b的第二边均远离谐振层2,其中,第二边112是与第一交线111位置相对的边。For example, the number of slopes 11 included in at least one of the first surface and the second surface of the substrate 1 may be two, which are respectively denoted as the first slope 11a and the second slope 11b, as shown in FIGS. 8 and 9 , the first side of the first slope 11a and the first side of the second slope 11b intersect at the first intersection line 111, the first intersection line 111 is parallel to the upper surface of the resonance layer 2, and is close to the resonance layer 2, the first slope 11a Both the second side 112 of the second slope 11b and the second side of the second slope 11b are far away from the resonant layer 2 , wherein the second side 112 is the side opposite to the position of the first intersection line 111 .
如图8和图9所示,基底1的第二表面(即下表面)在谐振层2的正下方包括第一斜面11a和第二斜面11b,第一斜面11a和第二斜面11b相交于第一交线111,第一交线111平行且靠近谐振层2,而第一斜面11a的远离第一交线111的边远离谐振层2,第二斜面11b的远离第一交线111的边也远离谐振层2,基底1的第二表面构成人字形表面。As shown in FIGS. 8 and 9 , the second surface (i.e., the lower surface) of the substrate 1 includes a first slope 11a and a second slope 11b directly below the resonant layer 2, and the first slope 11a and the second slope 11b intersect at the first slope 11b. A line of intersection 111, the first line of intersection 111 is parallel and close to the resonant layer 2, and the side of the first slope 11a away from the first line of intersection 111 is far away from the resonant layer 2, and the side of the second slope 11b away from the first line of intersection 111 is also Away from the resonant layer 2, the second surface of the substrate 1 constitutes a herringbone surface.
如图8并参考图9所示,入射至第一斜面11a的声波逐渐反射至第一斜面11a的第二边112的位置处而衰减,入射至第二斜面11b的声波逐渐反射至第二斜面11b的第二边112的位置处而衰减。从而可以达到抑制这些声波产生的寄生振动模式的效果。As shown in Figure 8 and with reference to Figure 9, the sound wave incident on the first slope 11a is gradually reflected to the position of the second edge 112 of the first slope 11a and attenuated, and the sound wave incident on the second slope 11b is gradually reflected to the second slope Attenuation at the position of the second side 112 of 11b. Therefore, the effect of suppressing the spurious vibration modes generated by these sound waves can be achieved.
在一种示例中,基底1的第一表面和第二表面中的至少一个表面,也可以在对应谐振层2的位置包括第三斜面11c和第一平面12,也即是,基底1的表面在谐振层2的正下方不仅包括斜面还包括平面。如图10所示,第三斜面11c的第三边和第一平面12的第三边相交于第二交线11-12,且第二交线11-12靠近谐振层2,第三斜面11c的第四边113远离谐振层2,第四边113为与第二交线11-12的位置相对的边。In one example, at least one of the first surface and the second surface of the substrate 1 may also include a third slope 11c and a first plane 12 at a position corresponding to the resonant layer 2, that is, the surface of the substrate 1 Directly below the resonant layer 2 includes not only a slope but also a plane. As shown in Figure 10, the third side of the third slope 11c and the third side of the first plane 12 intersect at the second intersection line 11-12, and the second intersection line 11-12 is close to the resonant layer 2, the third slope 11c The fourth side 113 is far away from the resonant layer 2, and the fourth side 113 is the side opposite to the position of the second intersection line 11-12.
例如,如图10所示,基底1的第二表面在谐振层2的正下方的位置包括第三斜面11c和第一平面12,第三斜面11c和第一平面12相较于第二交线11-12,第二交线11-12平行且靠近谐振层2,第三斜面11c的与第二交线11-12位置相对的边平行且远离谐振层2。For example, as shown in FIG. 10, the second surface of the substrate 1 includes a third slope 11c and a first plane 12 at a position directly below the resonant layer 2, and the third slope 11c and the first plane 12 are compared to the second intersection line 11-12, the second intersection line 11-12 is parallel and close to the resonant layer 2, and the side of the third slope 11c opposite to the second intersection line 11-12 is parallel and away from the resonant layer 2.
这样入射至第三斜面11c的声波向靠近第三斜面11c的第四边113处反射而发生泄漏被衰减掉,从而能够抑制这些声波产生的寄生振动模式。In this way, the sound waves incident on the third slope 11c are reflected to the fourth side 113 close to the third slope 11c to be leaked and attenuated, so that the spurious vibration modes generated by these sound waves can be suppressed.
如上述所述,该谐振器能够缓解甚至避免频率跳变的问题,提高谐振器的频率稳定性。一旦谐振器的频率稳定性较高,能够将谐振器向外输出的频率锁在目标频率附近,其中目标频率是技术人员期望谐振器向外输出的频率。As mentioned above, the resonator can alleviate or even avoid the problem of frequency hopping, and improve the frequency stability of the resonator. Once the frequency stability of the resonator is high, the output frequency of the resonator can be locked near the target frequency, wherein the target frequency is the frequency that technicians expect the resonator to output.
例如,谐振器的电路中集成有锁相环(phase locked loop,PLL),锁相环是一种相位误差控制电路,能够通过比较输出的频率和目标频率,得到频率调整值,对下一次输出的频率进行调整,以使谐振器向外输出的频率能够锁在目标频率附近。For example, a phase locked loop (PLL) is integrated in the circuit of the resonator. The phase locked loop is a phase error control circuit, which can obtain the frequency adjustment value by comparing the output frequency with the target frequency, and adjust the next output frequency. Adjust the frequency of the resonator so that the output frequency of the resonator can be locked near the target frequency.
而如果谐振器的频率出现跳变,由于跳变后的频率和目标频率相差较远,那么,锁相环需要通过比较长的时间才能将谐振器输出的频率锁在目标频率附近,甚至锁相环无法将谐振器输出的频率锁在目标频率附近,从而导致谐振器所在设备的通信业务的中断。And if the frequency of the resonator jumps, because the frequency after the jump is far from the target frequency, then the phase-locked loop needs a relatively long time to lock the frequency output by the resonator near the target frequency, or even phase-lock The ring cannot lock the frequency output by the resonator near the target frequency, thus causing interruption of the communication service of the device where the resonator is located.
而本方案中的谐振器能够缓解甚至避免频率跳变,进而有利于将谐振器输出的频率快速 锁在目标频率附近,以确保谐振器所在设备的通信业务的正常运行,也能够减少甚至避免谐振器的锁相环失锁。The resonator in this solution can alleviate or even avoid frequency hopping, which is conducive to quickly locking the output frequency of the resonator near the target frequency, so as to ensure the normal operation of the communication service of the device where the resonator is located, and can also reduce or even avoid resonance. The phase-locked loop of the device loses lock.
在本申请实施例中,谐振器的基底的第一表面和第二表面中的至少一个表面包括斜面,斜面与其它表面都不平行,例如,斜面和压电层不平行,斜面和电极层也不平行,那么斜面与其它表面之间的声波经过多次传输以后会反射至谐振器的侧部而发生泄漏,进而能够有效抑制这些声波产生的寄生振动模式。而一旦寄生振动模式得到有效抑制,便能减弱寄生振动模式对有效振动模式产生的干扰,从而,能够缓解甚至避免谐振器的频率跳变。In the embodiment of the present application, at least one of the first surface and the second surface of the substrate of the resonator includes a slope, and the slope is not parallel to other surfaces, for example, the slope and the piezoelectric layer are not parallel, and the slope and the electrode layer are also not parallel. If they are not parallel, the sound waves between the slope and other surfaces will be reflected to the side of the resonator and leak after multiple transmissions, so that the spurious vibration modes generated by these sound waves can be effectively suppressed. Once the spurious vibration mode is effectively suppressed, the interference caused by the spurious vibration mode to the effective vibration mode can be weakened, so that the frequency jump of the resonator can be alleviated or even avoided.
本申请实施例还提供了一种谐振器,如图11并参考图12所示,该谐振器包括基底1和谐振层2,谐振层2位于基底1的第一表面。其中,谐振层2如上述所述可以包括压电层21和两个电极层22,压电层21位于两个电极层22之间。The embodiment of the present application also provides a resonator. As shown in FIG. 11 and FIG. Wherein, the resonant layer 2 may include a piezoelectric layer 21 and two electrode layers 22 as described above, and the piezoelectric layer 21 is located between the two electrode layers 22 .
如上述所述,该谐振器也可以包括反射层3,反射层3位于基底1和谐振层2之间。或者,谐振层2的远离基底1的上表面也可以铺设有反射层。As mentioned above, the resonator may also include a reflective layer 3 located between the substrate 1 and the resonant layer 2 . Alternatively, the upper surface of the resonant layer 2 away from the base 1 may also be covered with a reflective layer.
如图11所示,基底1的第一表面和第二表面中的至少一个表面包括弧面13,其中第一表面和第二表面的位置相对,弧面13能够促使入射至弧面13的声波向靠近谐振器的侧部的方向反射聚。As shown in FIG. 11 , at least one of the first surface and the second surface of the substrate 1 includes a curved surface 13, wherein the first surface and the second surface are opposite to each other, and the curved surface 13 can promote sound waves incident on the curved surface 13. The poly is reflected in a direction close to the side of the resonator.
其中,弧面13可以是不平行于压电层21的曲面,例如,压电层21的远离基底1的上表面和靠近基底1的下表面平行,而弧面13和压电层21的上表面不平行。Wherein, the arc surface 13 may be a curved surface not parallel to the piezoelectric layer 21, for example, the upper surface of the piezoelectric layer 21 away from the substrate 1 is parallel to the lower surface close to the substrate 1, and the upper surface of the arc surface 13 and the piezoelectric layer 21 The surfaces are not parallel.
例如,如图11并参考图12所示,基底1的第二表面包括弧面13,又例如,如图13所示,基底1的第一表面包括弧面13,该情况下,由于位于下方的电极层22和基底1接触,故位于下方的电极层22的下表面为与基底1的第一表面相匹配的弧面。For example, as shown in Figure 11 and with reference to Figure 12, the second surface of the base 1 includes an arc 13, and for example, as shown in Figure 13, the first surface of the base 1 includes an arc 13, in this case, due to the The electrode layer 22 is in contact with the substrate 1 , so the lower surface of the electrode layer 22 below is a curved surface matching the first surface of the substrate 1 .
其中,本实施例对基底1的第一表面,还是第二表面包括弧面13不做限定,可以以第二表面包括弧面13进行示例。In this embodiment, there is no limitation on whether the first surface or the second surface of the substrate 1 includes the curved surface 13 , and the second surface including the curved surface 13 may be used as an example.
如图11所示,基底1的第二表面(即下表面)包括弧面13,弧面13和谐振器的其它各个层均不平行,那么,如图14所示,弧面13和其他各个表面之间的声波经过多次传输以后,会反射至向谐振器的侧部,经由谐振器的侧部向外泄露,而被衰减掉,使得弧面13和谐振器的其它各个层之间难以形成驻波,进而由这些驻波产生的寄生振动模式便能够得到有效抑制。而一旦寄生振动模式得到有效抑制,便可以减弱寄生振动模式对有效振动模式产生的干扰,从而可以缓解甚至避免谐振器的频率跳变。As shown in Figure 11, the second surface (i.e. the lower surface) of the substrate 1 includes a curved surface 13, and the curved surface 13 is not parallel to other layers of the resonator, so, as shown in Figure 14, the curved surface 13 and other layers After multiple transmissions, the sound waves between the surfaces will be reflected to the side of the resonator, leak outward through the side of the resonator, and be attenuated, making it difficult to communicate between the arc surface 13 and other layers of the resonator. Standing waves are formed, and the spurious vibration modes generated by these standing waves can be effectively suppressed. Once the spurious vibration mode is effectively suppressed, the interference of the spurious vibration mode on the effective vibration mode can be weakened, so that the frequency jump of the resonator can be alleviated or even avoided.
其中,图14中实线箭头表示在压电层21中传播的声波,是不需要衰减的声波,图14中虚线箭头表示在弧面13和其他表面(如位于上方的电极层22的上表面)之间传播的声波,是需要衰减的声波。Wherein, among Fig. 14, solid line arrow represents the acoustic wave propagating in piezoelectric layer 21, is the sound wave that does not need attenuation, and dotted line arrow among Fig. ) The sound wave propagating between is the sound wave that needs to be attenuated.
在一种示例中,基底1的第一表面和第二表面中的至少一个表面可以为弧面13,或者,基底1的第一表面和第二表面中的至少一个表面,在对应谐振层2的位置处为弧面13,如在谐振层2的正下方的位置为弧面13,而至于其他位置,可以是弧面,也可以是平面。In one example, at least one of the first surface and the second surface of the substrate 1 may be an arc surface 13, or, at least one of the first surface and the second surface of the substrate 1, on the corresponding resonant layer 2 The position of the arc surface 13 is the arc surface 13, for example, the position directly below the resonant layer 2 is the arc surface 13, while other positions can be an arc surface or a plane.
其中,弧面13可以是球面或者抛物面,还可以是拱形面等。Wherein, the arc surface 13 may be a spherical surface or a parabolic surface, and may also be an arched surface or the like.
在一种示例中,弧面13的中心位置凸向谐振层2,弧面13的远离中心的边缘远离谐振层2,使得入射至弧面13的声波向谐振器的侧部方向反射而发生泄漏。In one example, the center of the arc surface 13 protrudes toward the resonator layer 2, and the edge of the arc surface 13 away from the center is away from the resonance layer 2, so that the sound wave incident on the arc surface 13 is reflected to the side of the resonator and leaks. .
在一种示例中,基底1的第一表面和第二表面中的至少一个表面,在对应谐振层2的位置也可以包括弧面和平面。例如,如图15所示,基底1的第一表面和第二表面中的至少一个表面,在对应谐振层2的位置包括弧面13和第二平面14。如图15所示,弧面13的第五边和第二平面14的第五边相交于第三交线13-14,第三交线13-14靠近谐振层2,弧面13的第六边131远离谐振层2,第六边131为与第三交线13-14的位置相对的边。In an example, at least one of the first surface and the second surface of the substrate 1 may also include a curved surface and a flat surface at a position corresponding to the resonant layer 2 . For example, as shown in FIG. 15 , at least one of the first surface and the second surface of the substrate 1 includes an arc surface 13 and a second plane 14 at a position corresponding to the resonant layer 2 . As shown in Figure 15, the fifth side of the arc surface 13 and the fifth side of the second plane 14 intersect at the third intersection line 13-14, the third intersection line 13-14 is close to the resonant layer 2, and the sixth side of the arc surface 13 The side 131 is away from the resonant layer 2, and the sixth side 131 is the side opposite to the position of the third intersection line 13-14.
例如,基底1的第二表面在谐振层2的正下方位置包括弧面13和第二平面14,弧面13和第二平面14相交于第三交线13-14,第三交线13-14靠近谐振层2且和谐振层2平行,而弧面13的与第三交线13-14位置相对的边远离谐振层2且与谐振层2平行。For example, the second surface of the substrate 1 includes an arc surface 13 and a second plane 14 directly below the resonant layer 2, and the arc surface 13 and the second plane 14 intersect at a third intersection line 13-14, and the third intersection line 13- 14 is close to the resonant layer 2 and parallel to the resonant layer 2 , while the side of the arc surface 13 opposite to the third intersection line 13 - 14 is far away from the resonant layer 2 and parallel to the resonant layer 2 .
其中,本实施例对基底1的表面在对应谐振层2的位置处是为弧面13,还是包括弧面13和第二平面14,不做具体限定,可以灵活选择。In this embodiment, whether the surface of the substrate 1 at the position corresponding to the resonant layer 2 is an arc surface 13 or includes an arc surface 13 and a second plane 14 is not specifically limited, and can be flexibly selected.
在一种示例中,基底1的第一表面和第二表面中的至少一个表面,在对应谐振层2的位置可以包括上述所述的斜面11和弧面13。例如,基底1的同一个表面既包括斜面11又包括弧面13。又例如,基底1的一个表面包括斜面11,另一个表面包括弧面13,如基底1的第一表面在对应谐振层2的位置包括斜面11,基底1的第二表面在对应谐振层2的位置包括弧面13。In one example, at least one of the first surface and the second surface of the substrate 1 may include the aforementioned inclined surface 11 and arc surface 13 at a position corresponding to the resonant layer 2 . For example, the same surface of the base 1 includes both the inclined surface 11 and the curved surface 13 . For another example, one surface of the substrate 1 includes a slope 11, and the other surface includes a curved surface 13. For example, the first surface of the substrate 1 includes a slope 11 at a position corresponding to the resonant layer 2, and the second surface of the substrate 1 is at a position corresponding to the resonant layer 2. The location includes arcuate surface 13 .
无论是斜面11还是弧面13,均能够促使入射的声波向靠近谐振器的侧部方向反射,以使声波发生泄漏或者扩散,而逐渐衰减。这些声波一旦得到衰减,并能够有效抑制这些声波产生的寄生振动模式,从而缓解寄生振动模式对有效振动模式产生的干扰,进而缓解谐振器在工作中出现频率跳变的情况。Whether it is the inclined surface 11 or the curved surface 13, they can encourage the incident sound wave to reflect toward the side close to the resonator, so that the sound wave leaks or diffuses, and gradually attenuates. Once these sound waves are attenuated, the spurious vibration modes generated by these sound waves can be effectively suppressed, thereby alleviating the interference of the parasitic vibration modes on the effective vibration modes, thereby alleviating the frequency hopping of the resonator during operation.
在本申请实施例中,该谐振器的基底的第一表面和第二表面中的至少一个表面包括弧面,弧面与其它表面都不平行,例如,弧面和压电层不平行,弧面和电极层也不平行,那么弧面与其它表面之间的声波经过多次传输以后会向谐振器的侧部方向反射而发生泄漏,进而能够有效抑制这些声波产生的寄生振动模式。而一旦寄生振动模式得到有效抑制,便能减弱寄生振动模式对有效振动模式产生的干扰,从而,能够缓解甚至避免谐振器的频率跳变。In the embodiment of the present application, at least one of the first surface and the second surface of the substrate of the resonator includes an arc surface, and the arc surface is not parallel to other surfaces, for example, the arc surface and the piezoelectric layer are not parallel, and the arc surface is not parallel to the piezoelectric layer. If the surface and the electrode layer are not parallel, the sound waves between the arc surface and other surfaces will be reflected to the side of the resonator and leak after multiple transmissions, and the spurious vibration modes generated by these sound waves can be effectively suppressed. Once the spurious vibration mode is effectively suppressed, the interference caused by the spurious vibration mode to the effective vibration mode can be weakened, so that the frequency jump of the resonator can be alleviated or even avoided.
本申请实施例还提供了一种电子元器件,该电子元器件可以是任意涉及到频率的元器件,例如,可以是时钟振荡器,也可以是滤波器等。The embodiment of the present application also provides an electronic component. The electronic component may be any component related to frequency, for example, it may be a clock oscillator or a filter.
该电子元器件包括上述所述的谐振器,其基底的第一表面和第二表面中的至少一个表面包括斜面,斜面与其它表面都不平行,例如,斜面和压电层不平行,斜面和电极层也不平行,那么斜面与其它表面之间的声波经过多次传输以后会反射至谐振器的侧部而发生泄漏,进而能够有效抑制这些声波产生的寄生振动模式。而一旦寄生振动模式得到有效抑制,便能减弱寄生振动模式对有效振动模式产生的干扰,从而,能够缓解甚至避免谐振器的频率跳变。The electronic component includes the above-mentioned resonator, at least one of the first surface and the second surface of the substrate includes a slope, and the slope is not parallel to other surfaces, for example, the slope is not parallel to the piezoelectric layer, and the slope and the piezoelectric layer are not parallel. If the electrode layers are not parallel, the sound waves between the inclined plane and other surfaces will be reflected to the side of the resonator and leak after multiple transmissions, and the spurious vibration modes generated by these sound waves can be effectively suppressed. Once the spurious vibration mode is effectively suppressed, the interference caused by the spurious vibration mode to the effective vibration mode can be weakened, so that the frequency jump of the resonator can be alleviated or even avoided.
以上所述仅为本申请一个实施例,并不用以限制本申请,凡在本申请原则之内,所作的任何修改、等同替换、改进等,均应包含在本申请的保护范围之内。The above is only an embodiment of the application, and is not intended to limit the application. Any modification, equivalent replacement, improvement, etc. made within the principles of the application shall be included in the protection scope of the application.

Claims (10)

  1. 一种谐振器,其特征在于,所述谐振器包括基底(1)和谐振层(2),所述谐振层(2)位于所述基底(1)的第一表面;A resonator, characterized in that the resonator comprises a substrate (1) and a resonant layer (2), and the resonant layer (2) is located on the first surface of the substrate (1);
    所述基底(1)的第一表面和第二表面中的至少一个表面包括斜面(11),所述第一表面和所述第二表面的位置相对;At least one of the first surface and the second surface of the substrate (1) includes a slope (11), and the first surface and the second surface are opposite to each other;
    所述斜面(11)被配置为使入射至所述斜面(11)的声波向靠近所述谐振器侧部的方向反射。The slope (11) is configured to reflect the sound wave incident on the slope (11) toward a direction close to the side of the resonator.
  2. 根据权利要求1所述的谐振器,其特征在于,所述基底(1)的第一表面和第二表面中的至少一个表面,在对应所述谐振层(2)的位置为斜面(11)。The resonator according to claim 1, characterized in that at least one of the first surface and the second surface of the substrate (1) is a slope (11) at a position corresponding to the resonant layer (2) .
  3. 根据权利要求1所述的谐振器,其特征在于,所述基底(1)的第一表面和第二表面中的至少一个表面,在对应所述谐振层(2)的位置包括第一斜面(11a)和第二斜面(11b);The resonator according to claim 1, characterized in that at least one of the first surface and the second surface of the substrate (1) includes a first slope ( 11a) and a second slope (11b);
    所述第一斜面(11a)的第一边和所述第二斜面(11b)的第一边相交于第一交线(111),且所述第一交线(111)靠近所述谐振层(2),第一斜面(11a)的第二边(112)和第二斜面(11b)的第二边(112)均远离所述谐振层(2),所述第二边(112)为与所述第一交线(111)的位置相对的边。The first side of the first slope (11a) and the first side of the second slope (11b) intersect at a first line of intersection (111), and the first line of intersection (111) is close to the resonance layer (2), the second side (112) of the first slope (11a) and the second side (112) of the second slope (11b) are far away from the resonant layer (2), and the second side (112) is The side opposite to the location of the first line of intersection (111).
  4. 根据权利要求1所述的谐振器,其特征在于,所述基底(1)的第一表面和第二表面中的至少一个表面,在对应所述谐振层(2)的位置包括第三斜面(11c)和第一平面(12);The resonator according to claim 1, characterized in that at least one of the first surface and the second surface of the substrate (1) includes a third slope ( 11c) and the first plane (12);
    所述第三斜面(11c)的第三边和所述第一平面(12)的第三边相交于第二交线(11-12),且所述第二交线(11-12)靠近所述谐振层(2),所述第三斜面(11c)的第四边(113)远离所述谐振层(2),所述第四边(113)为与所述第二交线(11-12)的位置相对的边。The third side of the third slope (11c) and the third side of the first plane (12) intersect at a second line of intersection (11-12), and the second line of intersection (11-12) is close to In the resonant layer (2), the fourth side (113) of the third slope (11c) is far away from the resonant layer (2), and the fourth side (113) is the line of intersection with the second (11c) -12) The position opposite the side.
  5. 根据权利要求1至4任一所述的谐振器,其特征在于,所述谐振层(2)包括压电层(21)和两个电极层(22),所述压电层(21)位于所述两个电极层(22)之间。The resonator according to any one of claims 1 to 4, characterized in that, the resonant layer (2) comprises a piezoelectric layer (21) and two electrode layers (22), and the piezoelectric layer (21) is located between the two electrode layers (22).
  6. 一种谐振器,其特征在于,所述谐振器包括基底(1)和谐振层(2),所述谐振层(2)位于所述基底(1)的第一表面;A resonator, characterized in that the resonator comprises a substrate (1) and a resonant layer (2), and the resonant layer (2) is located on the first surface of the substrate (1);
    所述基底(1)的第一表面和第二表面中的至少一个表面包括弧面(13),所述第一表面和所述第二表面的位置相对;At least one of the first surface and the second surface of the substrate (1) includes an arc surface (13), and the positions of the first surface and the second surface are opposite;
    所述弧面(13)被配置为使入射至所述弧面(13)的声波向靠近所述谐振器侧部的方向反射。The arc surface (13) is configured to reflect the sound wave incident on the arc surface (13) toward a direction close to the side of the resonator.
  7. 根据权利要求6所述的谐振器,其特征在于,所述基底(1)的第一表面和第二表面中的至少一个表面,在对应所述谐振层(2)的位置为弧面(13)。The resonator according to claim 6, characterized in that at least one of the first surface and the second surface of the substrate (1) is an arc surface (13) at a position corresponding to the resonant layer (2) ).
  8. 根据权利要求6所述的谐振器,其特征在于,所述基底(1)的第一表面和第二表面中的至少一个表面,在对应所述谐振层(2)的位置包括弧面(13)和第二平面(14);The resonator according to claim 6, characterized in that at least one of the first surface and the second surface of the substrate (1) includes an arc surface (13) at a position corresponding to the resonant layer (2) ) and the second plane (14);
    所述弧面(13)的第五边和所述第二平面(14)的第五边相交于第三交线(13-14),所述第三交线(13-14)靠近所述谐振层(2),所述弧面(13)的第六边(131)远离所述谐振层(2),所述第六边(131)为与所述第三交线(13-14)的位置相对的边。The fifth side of the arc surface (13) and the fifth side of the second plane (14) intersect at a third line of intersection (13-14), and the third line of intersection (13-14) is close to the In the resonant layer (2), the sixth side (131) of the arc surface (13) is far away from the resonant layer (2), and the sixth side (131) is the intersection with the third line (13-14) The opposite side of the position.
  9. 根据权利要求6至8任一所述的谐振器,其特征在于,所述弧面(13)为球面或抛物面。The resonator according to any one of claims 6 to 8, characterized in that, the arc surface (13) is a spherical surface or a parabolic surface.
  10. 一种电子元器件,其特征在于,所述电子元器件包括权利要求1至9任一所述的谐振器。An electronic component, characterized in that the electronic component comprises the resonator described in any one of claims 1-9.
PCT/CN2022/096637 2021-09-23 2022-06-01 Resonator and electronic component WO2023045397A1 (en)

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JP2001156583A (en) * 1999-11-30 2001-06-08 Kyocera Corp Piezoelectric resonator
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CN111957544A (en) * 2020-08-13 2020-11-20 中国工程物理研究院电子工程研究所 Backing structure of piezoelectric micromechanical ultrasonic transducer
CN112974202A (en) * 2021-04-15 2021-06-18 上海思陶电子科技有限公司 Ultrasonic transducer
CN216490422U (en) * 2021-09-23 2022-05-10 华为技术有限公司 Resonator and electronic component

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JP2001156583A (en) * 1999-11-30 2001-06-08 Kyocera Corp Piezoelectric resonator
JP2010263431A (en) * 2009-05-07 2010-11-18 Epson Toyocom Corp Surface acoustic wave device
CN111957544A (en) * 2020-08-13 2020-11-20 中国工程物理研究院电子工程研究所 Backing structure of piezoelectric micromechanical ultrasonic transducer
CN112974202A (en) * 2021-04-15 2021-06-18 上海思陶电子科技有限公司 Ultrasonic transducer
CN216490422U (en) * 2021-09-23 2022-05-10 华为技术有限公司 Resonator and electronic component

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