CN115865032A

CN115865032A - Resonator and electronic component

Info

Publication number: CN115865032A
Application number: CN202111116400.5A
Authority: CN
Inventors: 曾晓意; 伍伟; 郭凯洲; 李�浩; 王锦辉
Original assignee: Huawei Technologies Co Ltd
Current assignee: Huawei Technologies Co Ltd
Priority date: 2021-09-23
Filing date: 2021-09-23
Publication date: 2023-03-28
Also published as: WO2023045397A1

Abstract

The application discloses syntonizer and electronic components belongs to communication technical field. The resonator comprises a substrate and a resonance layer, wherein the resonance layer is positioned on a first surface of the substrate; at least one of the first and second surfaces of the substrate comprises a bevel, the first and second surfaces being located opposite to each other; the inclined surface is configured to reflect an acoustic wave incident to the inclined surface toward a direction close to the side of the resonator. By adopting the method and the device, the inclined plane is not parallel to other surfaces, so that sound waves between the inclined plane and other surfaces can be reflected to the side part of the resonator after being transmitted for multiple times to cause leakage, and then parasitic vibration modes generated by the sound waves can be effectively inhibited. Once the parasitic vibration mode is effectively inhibited, the interference of the parasitic vibration mode to the effective vibration mode can be weakened, and therefore the frequency jump of the resonator can be relieved and even avoided.

Description

Resonator and electronic component

Technical Field

The application relates to the technical field of communication, in particular to a resonator and an electronic component.

Background

A resonator is an element for generating a resonance frequency, and is widely used for electronic components related to frequencies, for example, electronic components such as a clock oscillator and a filter.

The resonator works on the principle that the piezoelectric layer of the resonator generates mechanical vibration under the action of a driving voltage, and the piezoelectric layer outputs an electric signal outwards under the action of the mechanical vibration. For example, in the mechanical vibration of the piezoelectric layer, the mechanical vibration whose vibration frequency is far from the natural frequency (also called resonant frequency) is gradually attenuated, the mechanical vibration whose vibration frequency is close to the natural frequency is gradually preserved, and finally, an electrical signal with a relatively stable frequency is output outwards by the mechanical vibration.

However, when the resonator is in operation, a frequency jump may occur, which may result in poor stability of the frequency of the electrical signal output from the resonator.

Disclosure of Invention

The application provides a syntonizer and electronic components, can alleviate the problem of the frequency hopping of syntonizer among the correlation technique, technical scheme is as follows:

in one aspect, there is provided a resonator comprising a substrate and a resonant layer, the resonant layer being located at a first surface of the substrate;

at least one of the first and second surfaces of the substrate comprises a bevel, the first and second surfaces being located opposite each other;

the inclined surface is configured to reflect an acoustic wave incident to the inclined surface toward a direction close to the side of the resonator.

For example, the first surface of the substrate may include a bevel, or the second surface of the substrate may include a bevel, or both the first surface and the second surface of the substrate may include a bevel.

In the scheme shown in the application, at least one of the first surface and the second surface of the substrate comprises an inclined surface, the inclined surface is not parallel to other surfaces, for example, the inclined surface is not parallel to the piezoelectric layer, and the inclined surface is not parallel to the electrode layer, so that the sound waves between the inclined surface and other surfaces are reflected to the side part of the resonator after being transmitted for multiple times to leak, and the parasitic vibration mode generated by the sound waves can be effectively inhibited. Once the parasitic vibration mode is effectively inhibited, the interference of the parasitic vibration mode to the effective vibration mode can be weakened, and therefore the frequency jump of the resonator can be relieved and even avoided.

In one possible implementation, at least one of the first surface and the second surface of the substrate is a slope at a position corresponding to the resonance layer.

For example, the second surface of the substrate is an inclined surface, and then two sides of the inclined surface having the height difference are respectively located at two opposite sides of the substrate. Alternatively, the second surface of the substrate may be an inclined surface at a position corresponding to the resonance layer and a flat surface at other positions, for example, the second surface of the substrate has a larger area and may be an inclined surface directly below the resonance layer and a flat surface parallel to the upper surface of the resonance layer, so that two sides of the inclined surface having a height difference are respectively located on the plane of the first side of the resonance layer and the plane of the second side of the resonance layer, and the first side of the resonance layer and the second side of the resonance layer are located opposite to each other.

The first surface of the substrate is an inclined surface, or the second surface is an inclined surface, or both the first surface and the second surface are inclined surfaces, so that the processing is convenient, and the processing efficiency of the resonator can be improved.

In a possible implementation, at least one of the first surface and the second surface of the substrate includes a first inclined surface and a second inclined surface at a position corresponding to the resonance layer;

the first edge of the first inclined plane and the first edge of the second inclined plane are intersected on a first intersection line, the first intersection line is close to the resonance layer, the second edge of the first inclined plane and the second edge of the second inclined plane are both far away from the resonance layer, and the second edge is an edge opposite to the position of the first intersection line.

According to the scheme, the sound waves incident to the first inclined plane are gradually reflected to the position of the second edge of the first inclined plane to be attenuated, and the sound waves incident to the second inclined plane are gradually reflected to the position of the second edge of the second inclined plane to be attenuated, so that the effect of inhibiting parasitic vibration modes generated by the sound waves can be achieved.

In a possible implementation, at least one of the first surface and the second surface of the substrate includes a third inclined plane and a first plane at a position corresponding to the resonance layer;

the third edge of the third inclined plane and the third edge of the first plane intersect at a second intersection line, the second intersection line is close to the resonance layer, the fourth edge of the third inclined plane is far away from the resonance layer, and the fourth edge is an edge opposite to the position of the second intersection line.

According to the scheme shown in the application, the sound waves incident to the third inclined surface can be reflected to the fourth side close to the third inclined surface, leakage occurs, and the leakage is attenuated, so that parasitic vibration modes generated by the sound waves can be restrained.

In one possible implementation, the resonance layer comprises a piezoelectric layer and two electrode layers, the piezoelectric layer being located between the two electrode layers.

In the scheme shown in the present application, the piezoelectric layer can also be referred to as a piezoelectric film, the electrode layers can also be referred to as metal electrodes, and since the two electrode layers are located one above the piezoelectric layer and the other below the piezoelectric layer, the two electrode layers can also be referred to as an upper electrode and a lower electrode.

Thus, the substrate, one of the electrode layers, the piezoelectric layer and the other electrode layer are sequentially stacked.

In one possible implementation, at least one of the first surface and the second surface of the substrate may include a slope and a curved surface at a position corresponding to the resonance layer.

For example, either the first surface or the second surface of the substrate includes a bevel and a camber. For another example, the first surface of the substrate includes a bevel and the second surface of the substrate includes a contour. For another example, the first surface of the substrate includes a curved surface and the second surface of the substrate includes a bevel.

Whether the inclined surface or the cambered surface is adopted, the incident sound wave can be promoted to be reflected towards the direction close to the side part of the resonator, so that the sound wave is leaked or diffused to be gradually attenuated. Once the sound waves are attenuated, the parasitic vibration modes generated by the sound waves can be effectively inhibited, so that the interference of the parasitic vibration modes on the effective vibration modes is relieved, and the condition that the frequency of the resonator jumps in work is relieved.

In another aspect, there is provided a resonator comprising a substrate and a resonant layer, the resonant layer being located at a first surface of the substrate;

at least one of the first and second surfaces of the substrate comprises a curved surface, the first and second surfaces being located opposite to each other;

the arc is configured to reflect sound waves incident to the arc in a direction closer to the resonator side.

According to the scheme shown in the application, at least one of the first surface and the second surface of the substrate of the resonator comprises the arc surface, the arc surface is not parallel to other surfaces, for example, the arc surface is not parallel to the piezoelectric layer, and the arc surface is not parallel to the electrode layer, so that sound waves between the arc surface and other surfaces can be reflected to the side of the resonator to leak after being transmitted for multiple times, and then parasitic vibration modes generated by the sound waves can be effectively inhibited. Once the parasitic vibration mode is effectively inhibited, the interference of the parasitic vibration mode to the effective vibration mode can be weakened, and therefore the frequency jump of the resonator can be relieved and even avoided.

In a possible implementation manner, at least one of the first surface and the second surface of the substrate is a cambered surface at a position corresponding to the resonance layer.

In the scheme shown in the application, the center of the cambered surface protrudes towards the resonance layer, and the edge of the cambered surface, which is far away from the center, is far away from the resonance layer, so that the sound waves incident to the cambered surface are reflected to the side part of the resonator to cause leakage.

In a possible implementation, at least one of the first surface and the second surface of the substrate includes an arc surface and a second plane at a position corresponding to the resonance layer;

the fifth edge of the cambered surface and the fifth edge of the second plane are intersected on a third intersection line, the third intersection line is close to the resonance layer, the sixth edge of the cambered surface is far away from the resonance layer, and the sixth edge is an edge opposite to the third intersection line in position.

For example, the second surface of the substrate includes an arc surface and a second plane at a position directly below the resonance layer, the arc surface and the second plane intersect at a third intersection line, the third intersection line is close to and parallel with the resonance layer, and an edge of the arc surface opposite to the position of the third intersection line is distant from and parallel with the resonance layer.

In this way, the sound waves incident on the arc surface are reflected to a position away from the center of the resonator, and the leakage is attenuated, so that the spurious vibration mode generated by the sound waves can be suppressed.

In a possible implementation, the arc surface is a spherical surface or a paraboloid, and can also be an arched surface or the like.

In a possible implementation, at least one of the first surface and the second surface of the substrate includes a slope and a curved surface at a position corresponding to the resonance layer, and the slope and the curved surface are used for reflecting the incident sound wave to a direction close to the side of the resonator.

For example, either the first surface or the second surface of the substrate includes a bevel and a camber. For another example, the first surface of the substrate includes a bevel and the second surface of the substrate includes a camber. For another example, the first surface of the substrate includes a curved surface and the second surface of the substrate includes a beveled surface.

Whether the inclined surface or the cambered surface is adopted, the incident sound wave can be promoted to be reflected towards the direction close to the side part of the resonator, so that the sound wave is leaked or diffused to be gradually attenuated. Once the sound waves are attenuated, the parasitic vibration modes generated by the sound waves can be effectively inhibited, so that the interference of the parasitic vibration modes on the effective vibration modes is relieved, and the frequency hopping of the resonator in the working process is relieved.

In another aspect, an electronic component is provided, which includes the resonator described above.

In the solution shown in the present application, the electronic component includes the resonator described above, and at least one of the first surface and the second surface of the substrate includes an inclined surface, the inclined surface is not parallel to any other surface, for example, the inclined surface is not parallel to the piezoelectric layer, and the inclined surface is not parallel to the electrode layer, so that the acoustic wave between the inclined surface and the other surface will be reflected to the side of the resonator after multiple transmissions and leak, and thus the parasitic vibration mode generated by the acoustic wave can be effectively suppressed. Once the parasitic vibration mode is effectively inhibited, the interference of the parasitic vibration mode to the effective vibration mode can be weakened, and therefore the frequency jump of the resonator can be relieved and even avoided.

Drawings

Fig. 1 is a schematic structural view of a conventional resonator;

FIG. 2 is a schematic diagram of a conventional resonator;

fig. 3 is a schematic structural diagram of a resonator provided in the present application;

fig. 4 is a schematic structural diagram of a resonator provided in the present application;

fig. 5 is a schematic structural diagram of a resonator provided in the present application;

FIG. 6 is a schematic diagram of a resonator according to the present application;

FIG. 7 is a schematic illustration of an acoustic wave propagating in a resonator as provided herein;

fig. 8 is a schematic structural diagram of a resonator provided in the present application;

fig. 9 is a schematic structural diagram of a resonator provided in the present application;

FIG. 10 is a schematic diagram of a resonator according to the present application;

fig. 11 is a schematic structural diagram of a resonator provided in the present application;

fig. 12 is a schematic structural diagram of a resonator provided in the present application;

fig. 13 is a schematic structural diagram of a resonator provided in the present application;

FIG. 14 is a schematic illustration of an acoustic wave propagating in a resonator as provided herein;

fig. 15 is a schematic structural diagram of a resonator provided in the present application.

Description of the figures

1. A substrate; 11. a bevel; 12. a first plane; 13. a cambered surface; 14. a second plane;

11a, a first inclined plane; 11b, a second inclined plane; 11c, a third inclined surface;

111. a first intersection line; 112. a second edge; 113. a fourth side;

131. a sixth side; 11-12, a second intersection line; 13-14, third intersection line;

2. a resonance layer; 21. a piezoelectric layer; 22. an electrode layer;

3. and a reflective layer.

Detailed Description

The embodiment of the application provides a resonator, which is an element for generating resonant frequency, for example, the resonator can utilize acoustic wave resonance to realize electrical frequency selection, and can be widely applied to electronic components related to frequency, for example, electronic components such as a clock oscillator and a filter.

The resonator may be a Bulk Acoustic Wave (BAW) resonator, which is a device that uses bulk acoustic wave resonance to generate a frequency. A bulk acoustic wave is an acoustic wave that propagates inside an object, such as between two opposing surfaces at two locations on the object, as opposed to the concept of a Surface Acoustic Wave (SAW), which is an acoustic wave that propagates along a solid surface, and devices that generate frequencies by resonance of surface acoustic waves may be referred to as SAW resonators.

The most basic structure of the resonator is that, as shown in fig. 1, the resonator mainly comprises a substrate 1 and a resonant layer 2, the resonant layer 2 is located on the surface of the substrate 1, and the substrate 1 can also be called a substrate and is used for supporting the resonant layer 2. The resonance layer 2 mainly comprises a piezoelectric layer 21 and two electrode layers 22, the piezoelectric layer 21 is located between the two electrode layers 22, and a sandwich-like structure is formed.

The piezoelectric layer 21 may be referred to as a piezoelectric film (piezo layer). The electrode layers 22 may also be referred to as metal electrodes, and one of the two electrode layers 22 serves as a positive electrode and the other serves as a negative electrode. Since the two electrode layers 22 are located one above the piezoelectric layer 21 and the other below the piezoelectric layer 21, the two electrode layers may also be referred to as a top electrode (top electrode) and a bottom electrode (bottom electrode), respectively.

Thus, as shown in fig. 1, the substrate 1, one of the electrode layers 22, the piezoelectric layer 22, and the other electrode layer 22 are sequentially stacked.

In one example, regarding the area relationship of the substrate 1 and the resonance layer 2, in one example, the area of the substrate 1 may be equal to the area of the resonance layer 2. In another example, as shown in fig. 1, the area of the substrate 1 may be much larger than that of the resonance layer 2. The relationship between the area of the substrate 1 and the area of the resonant layer 2 is not limited, and the design can be flexible.

Regarding the area relationship of the piezoelectric layer 21 and the electrode layer 22 of the resonance layer 2, in one example, the areas of the piezoelectric layer 21 and the two electrode layers 22 may be both equal. In another example, as shown in fig. 1, the area of the piezoelectric layer 21 is equal to the area of the electrode layer 22 far from the substrate 1, while the area of the piezoelectric layer 21 is smaller than the area of the electrode layer 22 near the substrate 1, and the area of the electrode layer 22 near the substrate 1 may be equal to the area of the substrate 1 or smaller than the area of the substrate 1.

In the present embodiment, the specific relationship between the area of the substrate 1, the area of the piezoelectric layer 21, and the areas of the two electrode layers 22 is not specifically limited, and can be flexibly designed.

In one example, the piezoelectric layer 21 is a core component of the resonator, is made of a piezoelectric material, and has a piezoelectric effect, that is, when a voltage is applied to two opposite surfaces of the piezoelectric layer 21, the two surfaces are slightly deformed to generate an acoustic wave, and conversely, when the piezoelectric layer 21 is pressed, a voltage is generated. For example, the principle of the piezoelectric layer 21 generating an acoustic wave and a voltage can be as follows:

when an electric field exists between the two electrode layers 22, due to the voltage applied to the inside of the piezoelectric layer 21, in order to maintain charge balance, atoms inside the piezoelectric layer vibrate back and forth to deform the shape of the piezoelectric layer 21, so that an acoustic wave is generated inside the piezoelectric layer 21, which may be referred to as an inverse piezoelectric effect, and the conversion of electric energy into mechanical energy is realized. When the acoustic wave propagates in the piezoelectric layer 21, some atomic distances become closer or farther, which disturbs the original balance, and a net charge occurs, that is, the charge of an object or a part of the object that is not cancelled appears, so that the surface of the piezoelectric layer 21 has positive charges and negative charges, which generates an electrical signal.

As described above, the wave resonator is a device for electrically selecting a frequency using acoustic wave resonance, and the principle thereof may be as follows, wherein resonance is also called resonance, which is a phenomenon in which when a vibration frequency of an object is the same as or close to a natural frequency of the object, an amplitude of the object is rapidly increased, and a frequency at which resonance occurs may be called a resonance frequency. Then, when the piezoelectric layer 21 vibrates under the action of voltage, the vibration far away from the natural frequency is gradually attenuated, the vibration the same as or close to the fixed frequency is retained, and finally the piezoelectric layer 21 vibrates at the resonant frequency, so that the electric signal generated at the resonant frequency is also the electric signal with a relatively pure frequency, and further the acoustic wave resonance realizes the electrical frequency selection.

In one example, to facilitate the acoustic wave to propagate back and forth in the piezoelectric layer 21, the resonator may further include a reflective layer 3, as shown in fig. 2, the reflective layer 3 being located between the substrate 1 and the resonant layer 2. The reflective layer 3 serves to reflect an incident acoustic wave into the piezoelectric layer 21 to confine the acoustic wave in the piezoelectric layer 21 as much as possible to improve the quality factor (Q) of the resonator.

The reflecting layer 3 may be a bragg reflecting layer, and the bragg reflecting layer is formed by a series of acoustic reflecting layers with high and low impedance at intervals, so that the acoustic wave can be well reflected to the piezoelectric layer 21, and the acoustic wave is confined in the piezoelectric layer 21 for propagation.

The reflecting layer 3 may also be a structure having a cavity, the cavity has vacuum or air therein, the acoustic resistance is large, and during transmission, an acoustic wave can be well reflected into the piezoelectric layer 21 when encountering the cavity of the reflecting layer 3, so that the acoustic wave is limited inside the piezoelectric layer 21 to propagate.

Among them, a resonator including a bragg reflective layer may be referred to as a Solid Mounted Resonator (SMR), and a resonator including a reflective layer having a cavity may be referred to as a Film Bulk Acoustic Resonator (FBAR).

In this embodiment, the specific form of the reflective layer 3 is not limited, and can be flexibly selected according to the situation.

In one example, the number of the reflective layers 3 may also be two, one reflective layer 3 is located between the substrate 1 and the resonant layer 2, and the other reflective layer 3 is located on the upper surface of the resonant layer 2 away from the substrate 1, that is, the resonant layer 2 is located between the two reflective layers 3.

In this embodiment, it is not limited whether the resonator includes the reflective layer 3 or not, and includes several reflective layers 3, and the resonator may be flexibly selected according to the situation.

In one example, in operation, the resonator has a desired frequency, which may be referred to as an operating frequency, out of resonance generated by acoustic waves propagating in the piezoelectric layer 21, and a vibration mode generated by such acoustic waves may be referred to as an effective vibration mode. While the vibration generated by the sound wave propagating between the other two surfaces is output at an unwanted frequency, which may be called a spurious vibration mode. For example, a vibration mode generated by an acoustic wave propagating between the lower surface of the substrate 1 and the upper surface of the resonance layer 2 may be referred to as a parasitic vibration mode.

In operation, if the parasitic vibration mode interferes with the effective vibration mode, the resonator may cause the working frequency to jump.

In an example, when the resonator is manufactured, the interference of the parasitic vibration mode to the effective vibration mode can be weakened or even avoided as much as possible by controlling the thickness of the substrate 1, the reflective layer 3 and the resonance layer 2, and other factors, but the ambient temperature of the manufactured resonator can be changed during operation, and once the ambient temperature is changed, the thicknesses of the substrate 1, the reflective layer 3 and the resonance layer 2 can be affected, so that the parasitic vibration mode interferes with the effective vibration mode, and further the working frequency of the resonator is jumped.

The resonator of the scheme can weaken and even avoid the interference of the parasitic vibration mode on the effective vibration mode by effectively inhibiting the parasitic vibration mode, thereby relieving the frequency hopping of the resonator.

As shown in fig. 3 and with reference to fig. 4, the resonator includes a substrate 1 and a resonance layer 2, where the resonance layer 2 is located on a surface of the substrate 1, for example, a surface on which the resonance layer 2 is located may be referred to as a first surface, and then, the resonance layer 2 is located on the first surface of the substrate 1, and the first surface of the substrate 1 may be an upper surface or a lower surface of the substrate 1.

As shown in fig. 3, at least one of the first and second oppositely located surfaces of the substrate 1 includes a slope 11. Wherein the inclined plane 11 may be a plane not parallel to the piezoelectric layer 21 of the resonance layer 2. For example, as shown in fig. 3, the inclined surface 11 may be a plane that is not parallel to an upper surface of the piezoelectric layer 21 away from the base 1, wherein the upper surface of the piezoelectric layer 21 away from the base 1 and a lower surface close to the base 1 are parallel to each other. For example, as shown in fig. 3 and with reference to fig. 4, the angle between the bevel 11 and the piezoelectric layer 21 is α.

In one example, as shown in fig. 4, the second surface of the substrate 1 may include the inclined surface 11, and in another example, as shown in fig. 5, the first surface of the substrate 1 may also include the inclined surface 11, in which case, since the lower electrode layer 22 is attached to the substrate 1, the lower surface of the lower electrode layer 22 away from the piezoelectric layer 21 is an inclined surface adapted to the first surface of the substrate 1. In another example, it is also possible that both the first surface and the second surface of the substrate 1 comprise a bevel 11.

Since a plane not parallel to the piezoelectric layer 21 can be referred to as a bevel, it is also a schematic diagram of the second surface of the substrate 1 away from the piezoelectric layer 21 including the bevel 11 as shown in fig. 6, except that the plane of the piezoelectric layer 21 is parallel to the horizontal plane as shown in fig. 4, and the plane of the piezoelectric layer 21 is not parallel to the horizontal plane as shown in fig. 6.

In this embodiment, which surface of the substrate 1 includes the inclined surface 11 is not limited, and may be flexibly selected to satisfy that at least one of the first surface and the second surface of the substrate 1 is not parallel to the piezoelectric layer 21. For example, the embodiment may be exemplified in that the second surface of the substrate 1, that is, the lower surface of the substrate 1 includes the slope 11.

As shown in fig. 7, the inclined surface 11 is configured to cause an acoustic wave incident to the inclined surface 11 to be reflected toward a direction close to the side of the resonator, for example, the reflected acoustic wave is directed toward the peripheral edge of the substrate 1.

As shown in fig. 7, the lower surface of the substrate 1 includes the inclined surface 11, so that the sound wave (which may be referred to as clutter) between the lower surface of the substrate 1 and other surfaces is reflected to the side of the resonator after being transmitted for multiple times, leaks out through the side of the resonator, and is attenuated. Once these spurious waves are attenuated, the spurious modes of vibration generated by these spurious waves can be effectively suppressed. Once the parasitic vibration mode is suppressed, the interference of the parasitic vibration mode to the effective vibration mode can be weakened, and the frequency jump of the resonator can be relieved or even avoided.

In fig. 7, solid arrows indicate acoustic waves propagating in the piezoelectric layer 21 and not to be attenuated, and broken arrows indicate acoustic waves propagating between the inclined surface 11 and other surfaces (e.g., the upper surface of the electrode layer 22 located above) and not to be attenuated.

Because the inclined surface 11 can attenuate the incident sound wave, the larger the included angle α between the inclined surface 11 and the upper surface of the resonance layer 2 is, the better the attenuation effect on the spurious wave is, but the larger α will increase the difficulty in manufacturing the resonator, so that an appropriate α can be selected according to the suppression of the spurious vibration mode and the manufacturing of the resonator, for example, α can be taken as one degree or so.

In one example, at least one of the first surface and the second surface of the substrate 1 may be a slope 11 at a position corresponding to the resonance layer 2. As shown in fig. 3 and with reference to fig. 4, the inclined planes 11 intersect the plane of the first side and the plane of the second side of the resonant layer 1, respectively, and the intersecting lines are parallel to the upper surface of the resonant layer 2, wherein the first side and the second side of the resonant layer 2 are opposite to each other.

The second surface (i.e. the lower surface) of the substrate 1 may be exemplified, and one case may be that the second surface of the substrate 1 is an inclined surface 11, as can be seen from fig. 4, then two sides of the inclined surface 11 with a height difference are respectively located at two opposite sides of the position of the substrate 1. Alternatively, the second surface of the substrate 1 may be a slope 11 at a position corresponding to the resonance layer 2 and a plane at other positions, for example, the second surface of the substrate 1 may have a larger area, and may be a slope directly below the resonance layer 2 and a plane at other positions, the plane being parallel to the upper surface of the resonance layer 2, and then two sides of the slope 11 having a height difference are respectively located at the plane of the first side of the resonance layer 2 and the plane of the second side of the resonance layer 2, and the first side and the second side of the resonance layer 2 are located opposite to each other.

The case where the first surface of the substrate 1 is the inclined surface 11, or the second surface is the inclined surface 11, or both the first surface and the second surface are the inclined surfaces 11, facilitates the processing, for example, the surface of the substrate 1 may be subjected to a grinding process after the substrate 1 is processed to grind the inclined surface 11. The shape of such a substrate 1 comprising the bevel 11 may be wedge-shaped.

Wherein, if the first surface of the substrate 1 is the inclined surface 11, the first surface of the substrate 1 may be ground to grind the inclined surface 11 before depositing the resonance layer 2, for example, before depositing the electrode layer 22. If the second surface of the substrate 1 is a bevel, the bevel 11 may be milled before depositing the resonance layer 2, or the bevel 11 may be milled after depositing the resonance layer 2.

In the case where at least one of the first surface and the second surface of the substrate 1 is the inclined surface 11 at a position corresponding to the resonance layer 2, as shown in fig. 7, the acoustic wave between the inclined surface 11 and the other surface gradually approaches one side of the resonator and is attenuated by leaking from the side of the resonator. For example, an acoustic wave between the inclined surface 11 and the upper surface of the electrode layer 22 distant from the substrate 1, an acoustic wave between the inclined surface 11 and the upper surface of the piezoelectric layer 21, an acoustic wave between the inclined surface 11 and the lower surface of the electrode layer 22 near the substrate 1, and an acoustic wave between the inclined surface 11 and the upper surface of the substrate 1 can be gradually attenuated, so that parasitic vibration modes generated by these acoustic waves can be suppressed.

In one example, at least one of the first surface and the second surface of the substrate 1 may also include a plurality of slopes at positions corresponding to the resonant layers 2, and an edge of each of the plurality of slopes close to the central axis of the resonator and closer to the resonant layers 2, and an edge of each of the plurality of slopes farther from the central axis of the resonator and farther from the resonant layers 2. This enables the acoustic waves incident on each inclined surface to be reflected toward the side of the resonator and then to leak and diffuse outward via the side, so that parasitic vibration modes generated by these acoustic waves can be effectively suppressed.

For example, at least one of the first surface and the second surface of the substrate 1 may include two inclined surfaces 11, which are respectively referred to as a first inclined surface 11a and a second inclined surface 11b, and as shown in fig. 8 and 9, a first side of the first inclined surface 11a and a first side of the second inclined surface 11b intersect with a first intersection line 111, the first intersection line 111 is parallel to the upper surface of the resonance layer 2, and is close to the resonance layer 2, and a second side 112 of the first inclined surface 11a and a second side of the second inclined surface 11b are both far from the resonance layer 2, wherein the second side 112 is a side opposite to the first intersection line 111.

As shown in fig. 8 and 9, the second surface (i.e., the lower surface) of the substrate 1 includes a first inclined surface 11a and a second inclined surface 11b directly below the resonant layer 2, the first inclined surface 11a and the second inclined surface 11b intersect at a first intersection 111, the first intersection 111 is parallel and close to the resonant layer 2, a side of the first inclined surface 11a far from the first intersection 111 is far from the resonant layer 2, a side of the second inclined surface 11b far from the first intersection 111 is also far from the resonant layer 2, and the second surface of the substrate 1 constitutes a herringbone surface.

As shown in fig. 8 and with reference to fig. 9, the sound wave incident on the first inclined surface 11a gradually reflects to the position of the second edge 112 of the first inclined surface 11a to be attenuated, and the sound wave incident on the second inclined surface 11b gradually reflects to the position of the second edge 112 of the second inclined surface 11b to be attenuated. So that the effect of suppressing the parasitic vibration modes generated by these sound waves can be achieved.

In one example, at least one of the first surface and the second surface of the substrate 1 may also include the third inclined surface 11c and the first plane 12 at a position corresponding to the resonance layer 2, that is, the surface of the substrate 1 includes not only the inclined surface but also a plane directly below the resonance layer 2. As shown in fig. 10, the third edge of the third inclined surface 11c and the third edge of the first plane 12 intersect at a second intersection line 11-12, the second intersection line 11-12 is close to the resonant layer 2, the fourth edge 113 of the third inclined surface 11c is far from the resonant layer 2, and the fourth edge 113 is an edge opposite to the position of the second intersection line 11-12.

For example, as shown in fig. 10, the second surface of the substrate 1 includes a third inclined surface 11c and a first plane 12 at a position directly below the resonance layer 2, the third inclined surface 11c and the first plane 12 are compared with a second intersecting line 11-12, the second intersecting line 11-12 is parallel and close to the resonance layer 2, and the side of the third inclined surface 11c opposite to the position of the second intersecting line 11-12 is parallel and far from the resonance layer 2.

The sound waves incident on the third inclined surface 11c are reflected toward the fourth side 113 near the third inclined surface 11c, and the leakage is attenuated, so that the parasitic vibration mode generated by the sound waves can be suppressed.

As mentioned above, the resonator can alleviate or even avoid the problem of frequency hopping, and the frequency stability of the resonator is improved. Once the frequency stability of the resonator is high, the frequency of the resonator output can be locked near a target frequency, wherein the target frequency is the frequency that a technician expects the resonator to output.

For example, a Phase Locked Loop (PLL) is integrated in a circuit of the resonator, and the PLL is a phase error control circuit that obtains a frequency adjustment value by comparing an output frequency with a target frequency, and adjusts a next output frequency so that a frequency output from the resonator can be locked around the target frequency.

If the frequency of the resonator jumps, the frequency output by the resonator can be locked near the target frequency by the phase-locked loop for a long time because the frequency after jumping is far away from the target frequency, even the frequency output by the resonator cannot be locked near the target frequency by the phase-locked loop, thereby causing the interruption of the communication service of the equipment where the resonator is located.

The resonator in the scheme can relieve or even avoid frequency hopping, so that the frequency output by the resonator is favorably and quickly locked near the target frequency, the normal operation of the communication service of the equipment where the resonator is located is ensured, and the loss of lock of a phase-locked loop of the resonator can be reduced or even avoided.

In the embodiment of the application, at least one of the first surface and the second surface of the substrate of the resonator comprises the inclined surface, the inclined surface is not parallel to other surfaces, for example, the inclined surface is not parallel to the piezoelectric layer, and the inclined surface is not parallel to the electrode layer, so that the sound waves between the inclined surface and other surfaces can be reflected to the side part of the resonator to leak after being transmitted for multiple times, and the parasitic vibration mode generated by the sound waves can be effectively inhibited. Once the parasitic vibration mode is effectively inhibited, the interference of the parasitic vibration mode to the effective vibration mode can be weakened, and therefore the frequency jump of the resonator can be relieved and even avoided.

The present embodiment also provides a resonator, as shown in fig. 11 and with reference to fig. 12, including a substrate 1 and a resonance layer 2, where the resonance layer 2 is located on a first surface of the substrate 1. Wherein, the resonance layer 2 may comprise the piezoelectric layer 21 and the two electrode layers 22 as described above, and the piezoelectric layer 21 is located between the two electrode layers 22.

As mentioned above, the resonator may also comprise a reflective layer 3, the reflective layer 3 being located between the substrate 1 and the resonant layer 2. Alternatively, the upper surface of the resonant layer 2 remote from the substrate 1 may also be provided with a reflective layer.

As shown in fig. 11, at least one of the first surface and the second surface of the substrate 1 includes an arc surface 13, wherein the first surface and the second surface are located opposite to each other, and the arc surface 13 can cause the sound waves incident to the arc surface 13 to be reflected and focused in a direction close to the side of the resonator.

Wherein the arc surface 13 may be a curved surface that is not parallel to the piezoelectric layer 21, for example, an upper surface of the piezoelectric layer 21 that is away from the substrate 1 is parallel to a lower surface that is close to the substrate 1, and the arc surface 13 is not parallel to the upper surface of the piezoelectric layer 21.

For example, as shown in fig. 11 with reference to fig. 12, the second surface of the substrate 1 includes the arc surface 13, and for example, as shown in fig. 13, the first surface of the substrate 1 includes the arc surface 13, in which case, since the underlying electrode layer 22 is in contact with the substrate 1, the lower surface of the underlying electrode layer 22 is an arc surface matching the first surface of the substrate 1.

In this embodiment, it is not limited that the first surface or the second surface of the substrate 1 includes the arc surface 13, and the second surface may include the arc surface 13.

As shown in fig. 11, the second surface (i.e. the lower surface) of the substrate 1 includes the arc surface 13, and the arc surface 13 and other layers of the resonator are not parallel to each other, so that, as shown in fig. 14, after multiple transmissions, the sound wave between the arc surface 13 and other surfaces is reflected to the side of the resonator, leaks out through the side of the resonator, and is attenuated, so that standing waves are difficult to form between the arc surface 13 and other layers of the resonator, and thus parasitic vibration modes generated by the standing waves can be effectively suppressed. Once the parasitic vibration mode is effectively inhibited, the interference of the parasitic vibration mode to the effective vibration mode can be weakened, and therefore the frequency jump of the resonator can be relieved and even avoided.

In fig. 14, solid arrows indicate acoustic waves propagating in the piezoelectric layer 21 and not requiring attenuation, and broken arrows indicate acoustic waves propagating between the arc surface 13 and other surfaces (e.g., the upper surface of the electrode layer 22 located above) and not requiring attenuation.

In an example, at least one of the first surface and the second surface of the substrate 1 may be an arc surface 13, or at least one of the first surface and the second surface of the substrate 1 may be an arc surface 13 at a position corresponding to the resonance layer 2, for example, an arc surface 13 at a position directly below the resonance layer 2, and other positions may be an arc surface or a plane surface.

The arc surface 13 may be a spherical surface or a paraboloid, or an arched surface.

In one example, the center of the arc surface 13 protrudes toward the resonance layer 2, and the edge of the arc surface 13 away from the center is away from the resonance layer 2, so that the sound wave incident on the arc surface 13 is reflected toward the side of the resonator and leaks.

In one example, at least one of the first surface and the second surface of the substrate 1 may also include a curved surface and a flat surface at a position corresponding to the resonance layer 2. For example, as shown in fig. 15, at least one of the first surface and the second surface of the substrate 1 includes an arc surface 13 and a second plane surface 14 at a position corresponding to the resonance layer 2. As shown in fig. 15, the fifth side of the arc surface 13 and the fifth side of the second plane 14 intersect at a third intersection line 13-14, the third intersection line 13-14 is close to the resonance layer 2, the sixth side 131 of the arc surface 13 is far from the resonance layer 2, and the sixth side 131 is a side opposite to the position of the third intersection line 13-14.

For example, the second surface of the substrate 1 includes an arc surface 13 and a second plane 14 at a position directly below the resonance layer 2, the arc surface 13 and the second plane 14 intersect at a third intersection line 13-14, the third intersection line 13-14 is close to the resonance layer 2 and parallel to the resonance layer 2, and an edge of the arc surface 13 opposite to the position of the third intersection line 13-14 is distant from the resonance layer 2 and parallel to the resonance layer 2.

In this embodiment, whether the surface of the substrate 1 is the arc surface 13 or includes the arc surface 13 and the second plane 14 at the position corresponding to the resonance layer 2 is not specifically limited, and may be flexibly selected.

In one example, at least one of the first surface and the second surface of the substrate 1 may include the above-described inclined surface 11 and the arc surface 13 at a position corresponding to the resonance layer 2. For example, the same surface of the substrate 1 includes both the inclined surface 11 and the arc surface 13. For another example, one surface of the substrate 1 includes the inclined surface 11, and the other surface includes the arc surface 13, such that the first surface of the substrate 1 includes the inclined surface 11 at a position corresponding to the resonance layer 2, and the second surface of the substrate 1 includes the arc surface 13 at a position corresponding to the resonance layer 2.

Whether the inclined surface 11 or the cambered surface 13 is adopted, the incident sound wave can be promoted to be reflected towards the side direction of the resonator, so that the sound wave is leaked or diffused to be gradually attenuated. Once the sound waves are attenuated, the parasitic vibration modes generated by the sound waves can be effectively inhibited, so that the interference of the parasitic vibration modes on the effective vibration modes is relieved, and the frequency hopping of the resonator in the working process is relieved.

In the embodiment of the application, at least one of the first surface and the second surface of the substrate of the resonator comprises an arc surface, the arc surface is not parallel to other surfaces, for example, the arc surface is not parallel to the piezoelectric layer, and the arc surface is not parallel to the electrode layer, so that the sound waves between the arc surface and other surfaces are reflected to the side direction of the resonator after being transmitted for multiple times and then leak, and further parasitic vibration modes generated by the sound waves can be effectively inhibited. Once the parasitic vibration mode is effectively inhibited, the interference of the parasitic vibration mode to the effective vibration mode can be weakened, and therefore the frequency jump of the resonator can be relieved and even avoided.

The embodiment of the application also provides an electronic component, which can be any component related to frequency, for example, a clock oscillator, a filter and the like.

The electronic component comprises the resonator, at least one of the first surface and the second surface of the substrate of the electronic component comprises an inclined surface, the inclined surface is not parallel to other surfaces, for example, the inclined surface is not parallel to the piezoelectric layer, and the inclined surface is not parallel to the electrode layer, so that sound waves between the inclined surface and other surfaces can be reflected to the side part of the resonator to leak after being transmitted for multiple times, and then parasitic vibration modes generated by the sound waves can be effectively inhibited. Once the parasitic vibration mode is effectively inhibited, the interference of the parasitic vibration mode to the effective vibration mode can be weakened, and therefore the frequency jump of the resonator can be relieved and even avoided.

The above description is intended to be illustrative of the present application and not to be construed as limiting the present application, and any modifications, equivalents, improvements and the like made within the spirit of the present application are intended to be included within the scope of the present application.

Claims

1. A resonator, characterized in that it comprises a substrate (1) and a resonance layer (2), said resonance layer (2) being located at a first surface of said substrate (1);

at least one of a first surface and a second surface of the substrate (1) comprising a bevel (11), the first surface and the second surface being located opposite to each other;

the inclined surface (11) is configured to reflect an acoustic wave incident to the inclined surface (11) toward a direction close to the resonator side.

2. A resonator according to claim 1, characterized in that at least one of the first and second surfaces of the substrate (1) is a bevel (11) at a position corresponding to the resonance layer (2).

3. A resonator according to claim 1, characterized in that at least one of the first and second surfaces of the substrate (1) comprises, in a position corresponding to the resonance layer (2), a first inclined plane (11 a) and a second inclined plane (11 b);

the first edge of the first inclined surface (11 a) and the first edge of the second inclined surface (11 b) are intersected on a first intersection line (111), the first intersection line (111) is close to the resonance layer (2), the second edge (112) of the first inclined surface (11 a) and the second edge (112) of the second inclined surface (11 b) are both far away from the resonance layer (2), and the second edge (112) is an edge opposite to the position of the first intersection line (111).

4. A resonator according to claim 1, characterized in that at least one of the first and second surfaces of the substrate (1) comprises, in a position corresponding to the resonance layer (2), a third inclined plane (11 c) and a first plane (12);

the third edge of the third inclined plane (11 c) and the third edge of the first plane (12) intersect at a second intersection line (11-12), and the second intersection line (11-12) is close to the resonance layer (2), the fourth edge (113) of the third inclined plane (11 c) is far away from the resonance layer (2), and the fourth edge (113) is an edge opposite to the position of the second intersection line (11-12).

5. The resonator according to any of claims 1-4, characterized in that the resonance layer (2) comprises a piezoelectric layer (21) and two electrode layers (22), the piezoelectric layer (21) being located between the two electrode layers (22).

6. A resonator, characterized in that it comprises a substrate (1) and a resonance layer (2), said resonance layer (2) being located at a first surface of said substrate (1);

at least one of the first and second surfaces of the substrate (1) comprises an arc surface (13), the first and second surfaces being located opposite to each other;

the arc face (13) is configured to reflect sound waves incident to the arc face (13) toward a direction close to the resonator side.

7. A resonator according to claim 6, characterized in that at least one of the first and second surfaces of the substrate (1) is an arc (13) at a location corresponding to the resonance layer (2).

8. A resonator according to claim 6, characterized in that at least one of the first and second surfaces of the substrate (1) comprises, at a location corresponding to the resonance layer (2), an arc surface (13) and a second plane (14);

the fifth side of the cambered surface (13) and the fifth side of the second plane (14) are intersected at a third intersection line (13-14), the third intersection line (13-14) is close to the resonance layer (2), the sixth side (131) of the cambered surface (13) is far away from the resonance layer (2), and the sixth side (131) is the side opposite to the position of the third intersection line (13-14).

9. A resonator according to any of claims 6-8, characterized in that the curved surface (13) is spherical or parabolic.

10. An electronic component, characterized in that the electronic component comprises the resonator of any one of claims 1 to 9.