WO2023045262A1 - 功率放大装置和发射机 - Google Patents

功率放大装置和发射机 Download PDF

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Publication number
WO2023045262A1
WO2023045262A1 PCT/CN2022/078898 CN2022078898W WO2023045262A1 WO 2023045262 A1 WO2023045262 A1 WO 2023045262A1 CN 2022078898 W CN2022078898 W CN 2022078898W WO 2023045262 A1 WO2023045262 A1 WO 2023045262A1
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WIPO (PCT)
Prior art keywords
voltage
signal
output
resistor
switch tube
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Ceased
Application number
PCT/CN2022/078898
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English (en)
French (fr)
Inventor
司晓明
柳楠
胡劼
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Sanechips Technology Co Ltd
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Sanechips Technology Co Ltd
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Priority to US18/693,844 priority Critical patent/US20240388258A1/en
Publication of WO2023045262A1 publication Critical patent/WO2023045262A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/72—Gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0211—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the supply voltage or current
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H03F1/301—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in MOSFET amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/32—Modifications of amplifiers to reduce non-linear distortion
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/213—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only in integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
    • H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/02—Transmitters
    • H04B1/04—Circuits
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/02—Transmitters
    • H04B1/04—Circuits
    • H04B2001/0408—Circuits with power amplifiers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
    • Y02D30/00—Reducing energy consumption in communication networks
    • Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks

Definitions

  • the present application relates to the technical field of communications, in particular to a power amplification device and a transmitter.
  • the switch tube When the transmitter outputs high power, the switching tube responsible for the output power will generate a large voltage swing.
  • the switch tube is N-type Metal-Oxide-Semiconductor Field Effect Transistor (N-Metal-Oxide-Semiconductor, NMOS) as an example.
  • N-Metal-Oxide-Semiconductor, NMOS N-type Metal-Oxide-Semiconductor Field Effect Transistor
  • Vds of the tube exceeds the safe working voltage range of the NMOS switch tube, which greatly shortens the service life of the NMOS switch tube.
  • some high withstand voltage MOS switch tubes with thicker gate oxide layers are usually used in the output stage of the power amplifier device, so that in various scenarios of the transmitter , to ensure that the three ports of the MOS switch tube all work in the safe area of voltage.
  • the high withstand voltage MOS switch tube with a thicker gate oxide layer has a larger threshold voltage, which consumes the voltage margin and reduces the linear range of the output voltage of the transmitter, and the thicker gate oxide MOS switch tube also has a problem in some processes. It may not be supported, and the additional gate oxide layer will add an additional mask layer, which will increase the cost of production.
  • there is also a method of reducing the power supply voltage so that the swing of the output signal is within a safe range but this method will greatly deteriorate the voltage linear range of the transmitter, thereby deteriorating the linearity index of the circuit.
  • Embodiments of the present application provide a power amplification device and a transmitter.
  • the embodiment of the present application provides a power amplification device, including a power amplification module, the power amplification module includes a voltage output unit and a power amplification unit, wherein the voltage output unit is configured to output the first voltage signal and The second voltage signal;
  • the power amplifying unit includes a selector, a radio frequency processing circuit and a first switch tube, the input end of the selector is connected to the voltage output unit, and the output end of the selector is connected to the first switch
  • the gate of the first switching tube is connected to the radio frequency processing circuit;
  • the radio frequency processing circuit is configured to receive the baseband signal, and after processing the baseband signal, output the first radio frequency signal to the the source of the first switching tube;
  • the selector is configured to gate one of the first voltage signal and the second voltage signal, and output the gate voltage signal to the first The gate of the switch tube; when the first switch tube is in the on state, the selector gates the first voltage signal, and the first switch tube amplifies the first radio frequency signal , outputting
  • an embodiment of the present application provides a transmitter, including the power amplifying device provided in the first aspect above.
  • FIG. 1 is a schematic diagram of the voltage signal swing at the drain port of the NMOS switch tube in the prior art when outputting high power;
  • Fig. 2 is a structural block diagram of a power amplification device provided by an embodiment of the present application
  • Fig. 3 is a schematic structural diagram of a power amplification device provided by an embodiment of the present application.
  • Fig. 4 is a schematic structural diagram of a voltage output unit provided by an embodiment of the present application.
  • Fig. 5 is a schematic structural diagram of a power amplifying device provided by a specific embodiment of the present application.
  • At least one of the following and similar expressions refer to any group of these items, including any group of single or plural items.
  • at least one of a, b, and c can represent: a, b, c, a and b, a and c, b and c, or, a and b and c, where a, b, c can be a single , or more than one.
  • the switching tube responsible for the output power When the transmitter outputs high power, the switching tube responsible for the output power will generate a large voltage swing.
  • the voltage signal swing of the D port (drain) of the NMOS switch tube is very high, so that the drain-source voltage Vds of the MOS switch tube exceeds the safe operating voltage range of the MOS switch tube, resulting in The service life of the MOS switch tube is greatly shortened.
  • some high withstand voltage MOS switch tubes with thicker gate oxide layers are usually used in the output stage of the power amplifier device, so that in various scenarios of the transmitter , to ensure that the three ports of the MOS switch tube all work in the safe area of voltage.
  • both of the above two methods can guarantee the service life of the MOS switch tube, they each have disadvantages.
  • the high withstand voltage MOS switch tube with a thicker gate oxide layer has a larger threshold voltage, which consumes the voltage margin and reduces the linear range of the output voltage of the transmitter.
  • the thicker gate oxide MOS switch tube may not support it in some processes , the extra gate oxide will add an extra mask layer and increase the production cost. In this way of reducing the power supply voltage, an intuitive disadvantage is that it will greatly deteriorate the voltage linear range of the transmitter, thereby deteriorating the linearity index of the circuit.
  • the embodiments of the present application provide a power amplification device and a transmitter, which can ensure that the swing of the output signal is within a safe range without consuming the voltage margin and reducing the linear range of the output voltage, thereby solving the problem of large The voltage swing causes the problem of shortening the life of the switch tube.
  • FIG. 2 shows a structural block diagram of a power amplifying device provided by an embodiment of the present application.
  • the power amplifying device of the embodiment of the present application includes a power amplifying module, and the power amplifying module includes a voltage output unit and a power amplifying unit.
  • the power amplifying unit includes a selector (MUX), a radio frequency processing circuit and a first switch tube M1, the input terminal of the selector is connected to the voltage output unit, and the output terminal of the selector is connected to the gate of the first switch tube M1 , the source of the first switching tube M1 is connected to the radio frequency processing circuit, and the drain of the first switching tube M1 is connected to the radio frequency output terminal (Vout).
  • MUX selector
  • the first switching tube M1 described in the embodiment of the present application is a MOS switching tube, specifically, it may be an NMOS switching tube or a PMOS switching tube, and an NMOS switching tube will be used as an example for description below.
  • the voltage output unit includes two output terminals, namely a first output terminal and a second output terminal.
  • the first output terminal is configured to output a first voltage signal (VIN_A)
  • the second output terminal is configured to output a second voltage signal (VIN_B).
  • the first output terminal and the second output terminal are correspondingly connected to the two input terminals of the selector, so as to transmit the first voltage signal and the second voltage signal to the power amplifying unit.
  • the radio frequency processing circuit is configured to receive the baseband signal, and after processing the baseband signal, output the first radio frequency signal to the source of the first switch tube M1.
  • the radio frequency processing circuit can be connected to the baseband chip, and the baseband chip is configured to encode voice or other data signals into baseband codes (ie, baseband signals) for transmission, and the baseband chip outputs the baseband signals to the radio frequency processing circuit.
  • the radio frequency processing circuit After receiving the analog baseband signal (ABB) output from the baseband chip, the radio frequency processing circuit performs up-conversion processing on the ABB signal to generate a first radio frequency signal, and transmits the first radio frequency signal to the source of the first switch tube M1 .
  • ABB analog baseband signal
  • the first switching tube M1 is an output power tube of the power amplifying device, configured to amplify the power of the radio frequency signal, and transmit the amplified radio frequency signal from the radio frequency output terminal.
  • the first switch tube M1 performs power amplification on the first radio frequency signal obtained from the radio frequency processing circuit, and outputs a second radio frequency signal through the drain of the first switch tube M1, and then transmits the second radio frequency signal to the radio frequency output terminal to transmit the second radio frequency signal through the radio frequency output terminal.
  • the selector in the power amplifying unit is configured to gate one of the first voltage signal and the second voltage signal, and output the gate voltage signal to the gate of the first switch M1,
  • the gate voltage of the first switching tube M1 is adjusted by the gated voltage signal, so that the voltage swings of the three terminals of the first switching tube M1 are all within a safe range, thereby ensuring the working life of the MOS switching tube.
  • the first switching tube M1 includes two working states of on and off, and in the two states, the gate voltage requirements of the first switching tube M1 are different. Therefore, the voltage output unit of the embodiment of the present application outputs two different voltage signals (the first voltage signal and the second voltage signal), so that the selector gates the corresponding voltage signal based on the working state of the first switch tube M1, thereby satisfying Gate voltage requirements under different working conditions.
  • the selector selects the first voltage signal, and after the first switch tube M1 amplifies the power of the first radio frequency signal obtained from the radio frequency processing circuit, the second A drain of a switch M1 outputs a second radio frequency signal.
  • the selector selects the second voltage signal, and the drain of the first switch M1 has no radio frequency signal output.
  • the power amplifying unit When the first switch tube M1 is in the on state, the power amplifying unit is in the on state, and the selector selects the first voltage signal.
  • the formula (1) shows the calculation method of the saturation current I DS of the first switching transistor M1 working in the saturation region.
  • V G is the voltage of the terminal G of the gate of the first switch M1
  • V D is the voltage of the drain D of the first switch M1
  • V S is the voltage of the source S of the first switch M1
  • V TH is the voltage of the first switch M1.
  • the threshold voltage at which the tube M1 is turned on, and K is a constant factor.
  • the safe operating voltage range of the MOS transistor is generally V DS smaller than M*VDD, where M is a coefficient (the value of M is generally 1.2), and VDD is the power supply voltage. Therefore, by appropriately increasing the voltage V G , that is, by sending a suitable first voltage signal VIN_A to the gate of the first switching tube M1 through the voltage output unit, the drain-source voltage of the first switching tube M1 satisfies V DS ⁇ M*VDD, so as to meet the requirements of the working life of the MOS switch tube.
  • the voltage value of the second voltage signal VIN_B-N can take the lowest value under the condition of satisfying the service life, so as to ensure that when the first switching tube M1 is in the off state, the power amplifying unit is completely disconnected to prevent the baseband signal ABB Leakage current leaks to the RF output.
  • the radio frequency processing circuit may include a mixer (Mixer), and the mixer is configured to mix the baseband signal with a local oscillator signal (Local Oscillator, LO) to generate a first radio frequency signal, where the LO signal is also It can be called a carrier signal.
  • LO Local Oscillator
  • Mixing the local oscillation signal and the baseband signal can realize the frequency shift operation of the baseband signal, so that the transmitted signal can be modulated to the frequency band of the carrier signal.
  • the two output terminals of the mixer are correspondingly connected to the baseband signal and the local oscillation signal.
  • a first radio frequency signal is obtained.
  • the first radio frequency signal is mixed
  • the output end of the device is output to the source of the first switching transistor M1.
  • the radio frequency processing circuit may further include a third switching tube M3, the gate of the third switching tube M3 is set to receive the baseband signal, the source of the third switching tube M3 is grounded, and the drain of the third switching tube M3 Connect the mixer.
  • the third switching tube M3 here can be regarded as the input power amplifier tube of the baseband signal
  • the third switching tube M3 can be connected to the baseband chip, and is set to amplify the power of the baseband signal obtained from the baseband chip, and then the amplified The baseband signal is output to the mixer.
  • the power amplifying device may further include a control module.
  • the control module is configured to output a command signal (SEL), specifically, the command signal includes a turn-on command signal and a turn-off command signal.
  • SEL command signal
  • the selector is connected to the control module, and receives the command signal output by the control module, so as to gate the first voltage signal or the second voltage signal correspondingly according to the output command signal.
  • the selector selects the first voltage signal; when the instruction signal output by the control module is a turn-off instruction signal, the selector selects the second voltage signal. voltage signal.
  • the turn-on command signal can be set to a high level "1”, and the turn-off command signal can be set to a low level "0".
  • the control module When the power amplifying unit is in the on state, the control module outputs a high Level "1", when the selector receives a high level "1", the first voltage signal is selected; when the power amplifier unit is in the disconnected state, the control module outputs a low level "0" to the selector, and the selector When the low level "0" is received, the second voltage signal is gated.
  • the radio frequency processing circuit can also include a second switch tube M2, the gate of the second switch tube M2 is connected to the control module to receive the instruction signal of the control module; the source of the second switch tube M2 is connected to the third switch The source of the tube M3 is set to receive the baseband signal output by the third switch tube M3; the drain of the second switch tube M2 is connected to the mixer, and the baseband signal is output to the mixer through the drain of the second switch tube M2.
  • the second switching tube M2 functions as a switch in the power amplifying unit, and is used to control the working state (on or off) of the power amplifying unit.
  • the command signal received from the control module is a conduction command signal
  • the second switch tube M2 is in the conduction state, and then the first switch tube M1 is also in the conduction state, and the entire power amplifying unit is in the open working state
  • the instruction signal received from the control module is an off instruction signal (low level "0")
  • the second switching tube M2 is in the off state, and then the first switching tube M1 is also in the off state, and the entire power The amplifying unit is in a disconnected working state.
  • control module outputs the same command signal to the second switch tube M2 and the selector at the same time, so that the command signal output by the control module can be used not only to control the working state of the power amplification unit, but also to instruct the selector to execute A gating operation corresponding to the working state of the power amplifying unit.
  • the control module outputs a conduction command signal (high level "1") to the second switch tube M2 and the selector at the same time.
  • the power amplifying unit is in an open working state.
  • Both the tubes M2 are in the conduction state, and the selector selects the first voltage signal to transmit the first voltage signal to the gate of the first switching tube M1;
  • the control module simultaneously outputs a turn-off command to the second switching tube M2 and the selector signal (low level "0"), at this time the power amplifying unit is in the working state of disconnection, the first switching tube M1 and the second switching tube M2 are both in the off state, and the selector strobes the second voltage signal to set The second voltage signal is transmitted to the gate of the first switch M1.
  • the voltage output unit of the embodiment of the present application may include a first bias circuit and a second bias circuit, wherein the first bias circuit is configured to output a first voltage signal, and the second bias circuit The circuit is configured to output a second voltage signal.
  • the first bias circuit includes a first resistor, a second resistor and a first output terminal, the first terminal of the first resistor is connected to the working power terminal, and the second terminal of the first resistor is connected to the first terminal of the second resistor , the second terminal of the second resistor is connected to the ground terminal, the first output terminal is arranged between the first resistor and the second resistor, and the first voltage signal is output from the first output terminal.
  • the first resistor and the second resistor with appropriate resistance values can be selected, so that the first voltage signal output from the first output terminal can meet the requirements for the gate voltage of the first switching tube M1 in the on state, that is The input gate voltage can make the drain-source voltage satisfy V DS ⁇ M*VDD, so as to meet the working life requirement of the output power switching tube (ie, the first switching tube M1 ).
  • the second bias circuit includes a third resistor, a fourth resistor and a second output terminal, the first terminal of the third resistor is connected to the working power terminal, and the second terminal of the third resistor is connected to the first terminal of the fourth resistor , the second terminal of the fourth resistor is connected to the ground terminal, the second output terminal is arranged between the third resistor and the fourth resistor, and the second voltage signal is output from the second output terminal.
  • the third resistor and the fourth resistor with appropriate resistance values can be selected so that the voltage value of the second voltage signal VIN_B-N output from the second output terminal is greater than M*VDD-V D , thereby satisfying the requirements of the first switch tube.
  • M1 has a requirement on the grid voltage in the off state, so as to meet the requirement on the working life of the output power switching tube (ie, the first switching tube M1 ).
  • both the second resistor and the fourth resistor are variable resistors, and by adjusting the resistance values of the second resistor and the fourth resistor, the voltage values of the first voltage signal and the second voltage signal can be adjusted accordingly , realizing dynamic adjustment of the first voltage signal and the second voltage signal.
  • the The voltage values of the first voltage signal and the second voltage signal are correspondingly adjusted to realize dynamic adjustment of the first voltage signal and the second voltage signal.
  • both the first voltage signal and the second voltage signal can be adjusted flexibly, wherein the first voltage signal is adjusted to a suitable level required by the power amplifying unit to achieve better performance in the turned-on state; the second voltage signal is adjusted to be both
  • the working life requirement of the first switching tube M1 can be met when it is turned off, and at the same time, it can prevent the LO signal and ABB leakage current from leaking the proper level of the first switching tube M1.
  • the power amplifying device further includes a control module, and the control module is configured to determine the corresponding voltage of the first voltage signal according to the saturation current parameter of the first switching tube M1, the conduction voltage threshold, the drain-source voltage parameter and the power supply voltage parameter. the first voltage value, and adjust the resistance value of the second resistor according to the first voltage value, so that the first bias circuit outputs a first voltage signal satisfying the first voltage value.
  • the power supply voltage parameter is the output voltage of the working power supply terminal.
  • the specific voltage value of the first voltage signal (ie, the first voltage value) can be calculated based on the saturation current parameter, the conduction voltage threshold, and the drain-source voltage parameter of the first switch tube M1.
  • the drain-source voltage parameter V DS satisfies V DS ⁇ M*VDD
  • an appropriate first voltage value can be selected, and then the resistance value of the second resistor can be determined based on the first voltage value, that is, according to the first voltage Adjusting the resistance value of the second resistor can make the voltage output unit output the first voltage signal satisfying the first voltage value.
  • control module is also configured to determine the second voltage value corresponding to the second voltage signal according to the power supply voltage parameter and the drain voltage parameter of the first switch tube M1, and adjust the fourth resistor's voltage value according to the second voltage value. resistance value, so that the voltage output unit outputs a second voltage signal satisfying the second voltage value.
  • the above power supply voltage parameter refers to the voltage value of the voltage output from the working power supply terminal.
  • the second voltage value of the second voltage signal VIN_B-N should be set to be greater than M*VDD-V D That is to say, based on the power supply voltage parameter and the drain voltage parameter of the first switch tube M1, the second voltage value corresponding to the second voltage signal can be determined, and then the resistance value of the fourth resistor can be determined based on the second voltage value, and also That is to say, adjusting the resistance value of the fourth resistor according to the second voltage value can make the voltage output unit output the second voltage signal satisfying the second voltage value.
  • Fig. 5 shows a power amplifying device according to a specific embodiment of the present application.
  • the power amplifying device there may be multiple power amplifying modules, and each power amplifying module is respectively connected to a control module.
  • the control module correspondingly controls the working state (on or off) of each power amplifying module, that is, by adjusting the number of power amplifying modules in the on state in the power amplifying device, the effect of adjusting the output power of the power amplifying device can be achieved.
  • the power amplifying device includes N (N>0) power amplifying modules, and the control module outputs a conduction instruction signal (high level "1") to M (N>M>0) power amplifying units among them, so that these The M power amplifying units are in the on state; the control module outputs a shutdown instruction signal (low level "0") to the remaining N-M power amplifying units, so that the N-M power amplifying units are in the off state.
  • the output power of the power amplifying device needs to be increased, the number of power amplifying units in the on state can be increased correspondingly through the control module; when the output power of the power amplifying device needs to be reduced, the number of power amplifying units in the on state can be reduced .
  • the power amplifying device includes a power amplifying module, each power amplifying module includes a voltage output unit and a power amplifying unit, and outputs a first voltage signal and a second voltage signal through the voltage output unit; the power amplifying unit includes a selector, The radio frequency processing circuit and the first switching tube M1 output the first radio frequency signal to the source of the first switching tube M1 after the baseband signal is processed by the radio frequency processing circuit, and the selector is set to correspond to the working state of the first switching tube M1 Gate the first voltage signal or the second voltage signal, where the first voltage signal and the second voltage signal are used to adjust the gate voltage of the first switching tube M1 in the corresponding working state of the first switching tube M1, so that regardless of the first switching tube M1 Whether the switch tube M1 is in the on state or the off state, the voltage swings of the three ports of the first switch tube M1 are all within a safe range, thereby ensuring the working life of the first switch tube M1.
  • An embodiment of the present application further provides a transmitter, where the transmitter is provided with any power amplification device described above.
  • the transmitter includes a power amplifying device, and the power amplifying device includes N power amplifying modules and a control module.
  • Each power amplifying module includes a voltage output unit and a power amplifying unit, wherein the voltage output unit includes a first bias circuit and a second bias circuit, the first bias circuit is set to output the first voltage signal VIN_A, and the second bias circuit The setting circuit is set to output the second voltage signal VIN_B.
  • the power amplifying unit includes a selector MUX, a first switching tube M1, a mixer, a second switching tube M2 and a third switching tube M3.
  • the selector MUX includes two input terminals correspondingly connected to the first bias circuit and the second bias circuit, and the selector MUX also includes an instruction input end connected to the control module and configured to receive the output of the control module Instruction signal; the output end of the selector MUX is connected to the gate of the first switch M1, the drain of the first switch M1 is connected to the radio frequency output end, and the source of the first switch M1 is connected to the output end of the mixer; One input end of the Mixer is set to be connected to the local oscillation signal LO, and the other input end is connected to the drain of the second switching tube M2; the gate of the second switching tube M2 is connected to the control module and is set to receive The command signal output by the control module; the source of the second switching tube M2 is connected to the drain of the third switching tube M3, the gate of the third switching tube M3 is set to connect to the baseband signal ABB, and the drain of the third switching tube M3 grounded.
  • the power amplifying device includes a power amplifying module, each power amplifying module includes a voltage output unit and a power amplifying unit, and outputs a first voltage signal and a second voltage signal through the voltage output unit;
  • the power amplifying unit includes a selection device, a radio frequency processing circuit, and a first switch tube, the baseband signal is processed by the radio frequency processing circuit, and then the first radio frequency signal is output to the source of the first switch tube, and the selector is set to
  • the working state corresponds to gating the first voltage signal or the second voltage signal, where the first voltage signal and the second voltage signal are used to adjust the gate voltage of the first switching tube in the corresponding working state of the first switching tube , so that no matter whether the first switch tube is on or off, the voltage swings of the three ports of the first switch tube are all within a safe range, thereby ensuring the working life of the first switch tube.
  • the solutions in the embodiments of the present application do not consume voltage margins and reduce output voltage linearity

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Abstract

提供一种功率放大装置和发射机，功率放大装置包括功率放大模块，每个功率放大模块包括电压输出单元和功率放大单元，通过电压输出单元输出第一电压信号（VIN_A）和第二电压信号（VIN_B）；功率放大单元包括选择器（MUX）、射频处理电路和第一开关管（M1），通过射频处理电路对基带信号进行处理后输出第一射频信号至第一开关管（M1）的源极，选择器（MUX）被设置为根据第一开关管（M1）的工作状态对应选通第一电压信号（VIN_A）或者第二电压信号（VIN_B）。

Description

功率放大装置和发射机
相关申请的交叉引用
本申请基于申请号为202111109266.6、申请日为2021年09月22日的中国专利申请提出，并要求该中国专利申请的优先权，该中国专利申请的全部内容在此引入本申请作为参考。
技术领域
本申请涉及通信技术领域，特别是涉及一种功率放大装置和发射机。
背景技术
发射机在输出大功率时，负责输出功率的开关管会产生很大的电压摆幅。这里以开关管为N型金属-氧化物半导体场效应晶体管(N-Metal-Oxide-Semiconductor,NMOS)为例，当NMOS开关管的漏极端口的电压信号摆幅很高时，会使得NMOS开关管的漏源电压Vds超出NMOS开关管的安全工作电压范围，造成NMOS开关管的使用寿命大大缩短。
在一些情况下，为解决大电压摆幅造成开关管寿命缩短的问题，通常在功率放大装置的输出级采用一些加厚栅氧层的高耐压MOS开关管，使得在发射机各种场景下，保证MOS开关管的三端口都工作在电压的安全区。但是，加厚栅氧层的高耐压MOS开关管具有较大的阈值电压，消耗了电压裕度，降低了发射机的输出电压线性范围，而且加厚栅氧MOS开关管在一些工艺下也有可能不支持，额外增加的栅氧层会增加额外的掩膜层，使得生产的成本增加。在其它一些方案中，也有采用降低电源电压的方法，以使输出信号的摆幅在安全的范围内，但是这种方法会大大恶化发射机的电压线性范围，从而恶化电路的线性度指标。
发明内容
本申请实施例提供一种功率放大装置和发射机。
第一方面，本申请实施例提供一种功率放大装置，包括功率放大模块，所述功率放大模块包括电压输出单元和功率放大单元，其中，所述电压输出单元被设置为输出第一电压信号和第二电压信号；所述功率放大单元包括选择器、射频处理电路和第一开关管，所述选择器的输入端连接所述电压输出单元，所述选择器的输出端连接所述第一开关管的栅极，所述第一开关管的源极连接所述射频处理电路；所述射频处理电路被设置为接收基带信号，并对所述基带信号进行处理后，输出第一射频信号至所述第一开关管的源极；所述选择器被设置为选通所述第一电压信号和所述第二电压信号中的一个电压信号，并将选通的电压信号输出至所述第一开关管的栅极；在所述第一开关管为导通状态的情况下，所述选择器选通所述第一电压信号，所述第一开关管对所述第一射频信号进行放大后，从所述第一开关管的漏极输出第二射频信号；在所述第一开关管为关断状态的情况下，所述选择器选通所述第二电压信号。
第二方面，本申请实施例提供一种发射机，包括如上第一方面提供的功率放大装置。
附图说明
附图用来提供对本申请技术方案的进一步理解，并且构成说明书的一部分，与本申请的 实施例一起用于解释本申请的技术方案，并不构成对本申请技术方案的限制。
图1是已有技术中NMOS开关管在输出大功率时漏极端口的电压信号摆幅示意图；
图2是本申请的一个实施例提供的功率放大装置的结构框图；
图3是本申请的一个实施例提供的功率放大装置的结构示意图；
图4是本申请的一个实施例提供的电压输出单元的结构示意图；
图5是本申请的一个具体实施例提供的功率放大装置的结构示意图。
具体实施方式
为了使本申请的目的、技术方案及优点更加清楚明白，以下结合附图及实施例，对本申请进行进一步详细说明。应当理解，此处所描述的具体实施例仅用以解释本申请，并不用于限定本申请。
应了解，在本申请实施例的描述中，如果有描述到“第一”、“第二”等只是用于区分技术特征为目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量或者隐含指明所指示的技术特征的先后关系。“至少一个”是指一个或者多个，“多个”是指两个或两个以上。“和/或”，描述关联对象的关联关系，表示可以存在三种关系，例如，A和/或B，可以表示单独存在A、同时存在A和B、单独存在B的情况。其中A，B可以是单数或者复数。字符“/”一般表示前后关联对象是一种“或”的关系。“以下至少一项”及其类似表达，是指的这些项中的任意组，包括单项或复数项的任意组。例如，a、b和c中的至少一项可以表示：a，b，c，a和b，a和c，b和c，或者，a和b和c，其中a，b，c可以是单个，也可以是多个。
此外，下面所描述的本申请各个实施方式中所涉及到的技术特征只要彼此之间未构成冲突就可以相互组合。
发射机在输出大功率时，负责输出功率的开关管会产生很大的电压摆幅。参见图1，以NMOS开关管为例，NMOS开关管的D端口(漏极)的电压信号摆幅很高，从而使得MOS开关管的漏源电压Vds超出MOS开关管的工作电压安全范围，造成MOS开关管的使用寿命大大缩短。
在一些情况下，为解决大电压摆幅造成开关管寿命缩短的问题，通常在功率放大装置的输出级采用一些加厚栅氧层的高耐压MOS开关管，使得在发射机各种场景下，保证MOS开关管的三端口都工作在电压的安全区。在其它一些方案中，也有采用降低电源电压的方法，从而使输出信号的摆幅在安全的范围内。
上述两种方法虽然均可以令MOS开关管的使用寿命得到保证，但是各自均存在缺点。加厚栅氧层的高耐压MOS开关管具有较大的阈值电压，消耗了电压裕度，降低了发射机的输出电压线性范围，加厚栅氧MOS开关管在一些工艺下也有可能不支持，额外增加的栅氧会增加额外的掩膜层，增加生产的成本。而降低电源电压这种方式，一个直观的缺点是会大大恶化发射机的电压线性范围，从而恶化电路的线性度指标。
基于上述问题，本申请实施例提供一种功率放大装置和发射机，能够在不消耗电压裕度和降低输出电压线性范围的前提下，保证输出信号的摆幅处于安全的范围内，从而解决大电压摆幅造成开关管寿命缩短的问题。
请参见图2，图2示出了本申请实施例提供的一种功率放大装置的结构框图。如图2所示，本申请实施例的功率放大装置包括包括功率放大模块，所述功率放大模块包括电压输出 单元和功率放大单元。
本申请实施例中，功率放大单元包括选择器(MUX)、射频处理电路和第一开关管M1，选择器的输入端连接电压输出单元，选择器的输出端连接第一开关管M1的栅极，第一开关管M1的源极连接射频处理电路，第一开关管M1的漏极连接有射频输出端(Vout)。应了解，本申请实施例描述的第一开关管M1是MOS开关管，具体可以是NMOS开关管或者PMOS开关管，下面将以NMOS开关管为例进行说明。
本申请实施例中，电压输出单元包括两个输出端，分别为第一输出端和第二输出端。其中，第一输出端被设置为输出第一电压信号(VIN_A)，第二输出端被设置为输出第二电压信号(VIN_B)。第一输出端、第二输出端对应与选择器的两个输入端连接，以向功率放大单元输送第一电压信号和第二电压信号。
可以理解的是，射频处理电路被设置为接收基带信号，并对基带信号进行处理后，输出第一射频信号至第一开关管M1的源极。具体地，射频处理电路可以与基带芯片连接，基带芯片被设置为把语音或其他数据信号编码成用来发射的基带码(即基带信号)，基带芯片输出基带信号至射频处理电路。射频处理电路在接收到从基带芯片输出的模拟基带信号(ABB)之后，对ABB信号进行上变频处理，生成第一射频信号，并把该第一射频信号传输至第一开关管M1的源极。
可以理解的是，第一开关管M1为功率放大装置的输出功率管，被设置为对射频信号进行功率放大，并将放大后的射频信号从射频输出端发射出去。具体地，第一开关管M1对从射频处理电路获取的第一射频信号进行功率放大，并通过第一开关管M1的漏极输出第二射频信号，然后将该第二射频信号传输至射频输出端，以经射频输出端发射第二射频信号。
可以理解的是，功率放大单元中的选择器被设置为选通第一电压信号和第二电压信号中的一个电压信号，并将选通的电压信号输出至第一开关管M1的栅极，以通过选通的电压信号调整第一开关管M1的栅极电压，进而使得第一开关管M1三个端口电压摆幅均在安全的范围内，从而保证MOS开关管的工作寿命。
可以理解的是，第一开关管M1包括导通和关断两种工作状态，两种状态下，第一开关管M1的栅极电压需求是不相同的。因此，本申请实施例的电压输出单元输出两种不同的电压信号(第一电压信号和第二电压信号)，使得选择器基于第一开关管M1的工作状态选通对应的电压信号，从而满足不同工作状态下的栅极电压需求。
示例性的，在第一开关管M1为导通状态的情况下，选择器选通第一电压信号，第一开关管M1对从射频处理电路获取的第一射频信号进行功率放大后，从第一开关管M1的漏极输出第二射频信号。
示例性的，在第一开关管M1为关断状态的情况下，选择器选通第二电压信号，第一开关管M1的漏极没有射频信号输出。
下面对本申请实施例的功率放大装置的工作原理进行详细说明。
在第一开关管M1为导通状态时，功率放大单元处于开启状态，选择器选通第一电压信号。参见如下公式(1)，公式(1)示出了第一开关管M1工作在饱和区的饱和电流I DS的计算方式。
Figure PCTCN2022078898-appb-000001
其中，V G为第一开关管M1栅极G端电压，V D为第一开关管M1漏极D端电压，V S为第一开关管M1源极S端电压，V TH为第一开关管M1导通的阈值电压，K为常数因子。
对公式(1)进行变换，可得到第一开关管M1源极S端电压V S的计算公式，参见如下公式(2)。
Figure PCTCN2022078898-appb-000002
基于公式(2)，可以得到第一开关管M1的漏源电压V DS的计算公式，参见如下公式(3)
Figure PCTCN2022078898-appb-000003
应了解，MOS管的安全工作电压范围一般为V DS小于M*VDD，其中，M为系数(M的值一般为1.2)，VDD为电源电压。因此，可以通过适当的增大电压V G，也就是通过电压输出单元向第一开关管M1的栅极输送合适的第一电压信号VIN_A，使得第一开关管M1的漏源电压满足V DS＜M*VDD，从而满足MOS开关管工作寿命的要求。
在第一开关管M1为关断状态时，功率放大单元处于断开状态，选择器选通第二电压信号。此时由于第一开关管M1的饱和电流I DS＝0、第一开关管M1的栅源电压V GS<<V TH，从而可知V G接近V S。这里用一个近似系数N表示两者的差值，也就是V S＝V G-N＝VIN_B-N，此时V DS＝V D-V S＝V D-VIN_B+N。要满足V DS<M*VDD，只需设置合适的第二电压信号VIN_B，使得第二电压信号VIN_B-N的电压值大于M*VDD-VD，就能满足NMOS管工作寿命的要求。
具体实现时，第二电压信号VIN_B-N的电压值可以取取满足寿命情况下的最低值，这样可确保第一开关管M1在关断状态时，功率放大单元彻底断开，防止基带信号ABB漏电流泄露至射频输出端。
作为示例，参见图3，图3示出了本申请的一个实施例提供的射频处理电路的结构示意图。如图3所示，射频处理电路可以包括混频器(Mixer)，混频器被设置为将基带信号与本地振荡信号(Local Oscillator，LO)混频以产生第一射频信号，这里LO信号也可称为载波信号，将本地振荡信号与基带信号进行混频，可实现基带信号的频率搬移操作，使发射信号调制至载波信号的频段上。具体地，混频器的两个输出端对应接入基带信号、本地振荡信号，混频器对基带信号与本地振荡信号进行混频后，得到第一射频信号，该第一射频信号经混频器的输出端输出至第一开关管M1的源极。
可以理解的是，射频处理电路还可以包括第三开关管M3，第三开关管M3的栅极被设置为接收基带信号，第三开关管M3的源极接地，第三开关管M3的漏极连接混频器。具体地，这里的第三开关管M3可看作基带信号的输入功率放大管，第三开关管M3可以连接基带芯片，被设置为对从基带芯片获取的基带信号进行功率放大，然后将放大后的基带信号输出至混频器。
如图3所示，功率放大装置还可以包括控制模块。这里控制模块被设置为输出指令信号(SEL)，具体地，指令信号包括导通指令信号和关断指令信号。
可以理解的是，选择器连接控制模块，并接收控制模块输出的指令信号，以根据输出的 指令信号对应选通第一电压信号或者第二电压信号。
具体地，在控制模块输出的指令信号为导通指令信号的情况下，选择器选通第一电压信号；在控制模块输出的指令信号为关断指令信号的情况下，选择器选通第二电压信号。
示例性的，可以将导通指令信号设置为高电平“1”，将关断指令信号设置为低电平“0”，当功率放大单元处于开启状态时，控制模块向选择器输出高电平“1”，选择器在接收到高电平“1”时，选通第一电压信号；当功率放大单元处于断开状态时，控制模块向选择器输出低电平“0”，选择器在接收到低电平“0”时，选通第二电压信号。
如图3所示，射频处理电路还可以包括第二开关管M2，第二开关管M2的栅极连接控制模块，以接收控制模块的指令信号；第二开关管M2的源极连接第三开关管M3的源极，被设置为接收第三开关管M3输出的基带信号；第二开关管M2的漏极连接混频器，经第二开关管M2的漏极向混频器输出基带信号。
可以理解的是，第二开关管M2在功率放大单元中起到开关作用，用于控制功率放大单元的工作状态(开启或断开)。例如，当从控制模块接收到的指令信号为导通指令信号时，第二开关管M2为导通状态，进而使得第一开关管M1也为导通状态，整个功率放大单元处于开启的工作状态；当从控制模块接收到的指令信号为关断指令信号(低电平“0”)时，第二开关管M2为关断状态，进而使得第一开关管M1也为关断状态，整个功率放大单元处于断开的工作状态。
可以理解的是，控制模块同时向第二开关管M2和选择器输出相同的指令信号，使得控制模块输出的指令信号既能用于控制功率放大单元的工作状态，还能用于指示选择器执行与功率放大单元的工作状态对应的选通操作。
示例性的，控制模块同时向第二开关管M2和选择器输出导通指令信号(高电平“1”)，此时功率放大单元处于开启的工作状态，第一开关管M1、第二开关管M2均为导通状态，选择器选通第一电压信号，以将第一电压信号传输至第一开关管M1的栅极；控制模块同时向第二开关管M2和选择器输出关断指令信号(低电平“0”)，此时功率放大单元处于断开的工作状态，第一开关管M1、第二开关管M2均为关断状态，选择器选通第二电压信号，以将第二电压信号传输至第一开关管M1的栅极。
示例性的，参照图4，本申请实施例的电压输出单元可以包括第一偏置电路和第二偏置电路，其中，第一偏置电路被设置为输出第一电压信号，第二偏置电路被设置为输出第二电压信号。
示例性的，第一偏置电路包括第一电阻、第二电阻和第一输出端，第一电阻的第一端连接工作电源端，第一电阻的第二端连接第二电阻的第一端，第二电阻的第二端连接地端，第一输出端设置在第一电阻和第二电阻之间，第一电压信号从第一输出端输出。具体实现时，可以选取合适阻值的第一电阻和第二电阻，使得从第一输出端输出的第一电压信号能够满足第一开关管M1在导通状态下对栅极电压的要求，即输入的栅极电压能使漏源电压满足V DS＜M*VDD，从而满足输出功率开关管(即第一开关管M1)工作寿命的要求。
示例性的，第二偏置电路包括第三电阻、第四电阻和第二输出端，第三电阻的第一端连接工作电源端，第三电阻的第二端连接第四电阻的第一端，第四电阻的第二端连接地端，第二输出端设置在第三电阻和第四电阻之间，第二电压信号从第二输出端输出。具体实现时，可以选取合适阻值的第三电阻和第四电阻，使得从第二输出端输出的第二电压信号VIN_B-N 的电压值大于M*VDD-V D，进而满足第一开关管M1在关断状态下对栅极电压的要求，从而满足输出功率开关管(即第一开关管M1)工作寿命的要求。
在一种可能的实现方式中，第二电阻和第四电阻均为可变电阻，通过调节第二电阻和第四电阻的阻值，可以相应调整第一电压信号和第二电压信号的电压值，实现第一电压信号和第二电压信号的动态调节。
在另一种可能的实现方式中，通过分别向第一偏置电路和第二偏置电路输入可变的电流，通过调节输入第一偏置电路和第二偏置电路的电源电流值，可以相应调整第一电压信号和第二电压信号的电压值，实现第一电压信号和第二电压信号的动态调节。
基于上述方式，第一电压信号和第二电压信号均可以灵活调节，其中第一电压信号调节为功率放大单元在开启状态下实现较佳性能所需的合适电平；第二电压信号调节为既能在关断时满足第一开关管M1的工作寿命要求、同时又能防止LO信号和ABB漏电流泄露第一开关管M1的合适电平。
可以理解的是，功率放大装置还包括控制模块，控制模块被设置为根据第一开关管M1的饱和电流参数、导通电压阈值、漏源电压参数和电源电压参数，确定第一电压信号对应的第一电压值，并根据第一电压值调节第二电阻的电阻值，以使第一偏置电路输出满足第一电压值的第一电压信号。其中，电源电压参数为工作电源端的输出电压。
参见前面公式(3)的相关描述可知，第一电压信号的具体电压值(即第一电压值)可基于第一开关管M1的饱和电流参数、导通电压阈值、漏源电压参数计算得到。在漏源电压参数V DS满足V DS＜M*VDD的前提下，可选取合适的第一电压值，进而基于第一电压值能够确定第二电阻的电阻值，也就是说，根据第一电压值调节第二电阻的电阻值，可以使电压输出单元输出满足第一电压值的第一电压信号。
可以理解的是，控制模块还被设置为根据电源电压参数和第一开关管M1的漏极电压参数，确定第二电压信号对应的第二电压值，并根据第二电压值调节第四电阻的电阻值，以使电压输出单元输出满足第二电压值的第二电压信号。
应了解，上述电源电压参数指从工作电源端输出的电压的电压值。
应能理解，在功率放大单元处于关断状态时，为使第一开关管M1满足V DS<M*VDD，应当设置第二电压信号VIN_B-N的第二电压值大于M*VDD-V D，也就是说，基于电源电压参数和第一开关管M1的漏极电压参数，可以确定第二电压信号对应的第二电压值，进而基于第二电压值能够确定第四电阻的电阻值，也就是说，根据第二电压值调节第四电阻的电阻值，可以使电压输出单元输出满足第二电压值的第二电压信号。
参见图5，图5示出了本申请的一个具体实施例的功率放大装置。如图5所示，在功率放大装置中，功率放大模块的数量可以为多个，每个功率放大模块分别连接控制模块。通过控制模块相应地控制各个功率放大模块的工作状态(开启或者断开)，即通过调整功率放大装置中处于开启状态的功率放大模块的数量，可以达到调整功率放大装置输出功率的效果。
例如，功率放大装置中包括N(N＞0)个功率放大模块，控制模块向其中M(N＞M＞0)个功率放大单元输出导通指令信号(高电平“1”)，使这M个功率放大单元处于开启状态；控制模块向余下的N-M个功率放大单元输出关断指令信号(低电平“0”)，使这N-M个功率放大单元处于断开状态。当需要增大功率放大装置的输出功率时，可以通过控制模块相应增加处于开启状态的功率放大单元的数量；当需要降低功率放大装置的输出功率时，可以减少 处于开启状态的功率放大单元的数量。
本申请实施例提供的功率放大装置包括功率放大模块，每个功率放大模块包括电压输出单元和功率放大单元，通过电压输出单元输出第一电压信号和第二电压信号；功率放大单元包括选择器、射频处理电路和第一开关管M1，通过射频处理电路对基带信号进行处理后输出第一射频信号至第一开关管M1的源极，选择器被设置为根据第一开关管M1的工作状态对应选通第一电压信号或者第二电压信号，这里第一电压信号和第二电压信号用于在对应的第一开关管M1工作状态下调节第一开关管M1的栅极电压，以使得不论第一开关管M1在导通还是关断状态，第一开关管M1的三个端口的电压摆幅均在安全的范围内，从而保证了第一开关管M1的工作寿命。另外，本申请实施例的方案不会消耗电压裕度和降低输出电压线性度，容易实现，因而具有较高的实用和经济价值。
本申请实施例还提供一种发射机，该发射机设置有前文所描述的任意一种功率放大装置。
在一个具体的实施例中，发射机包括功率放大装置，该功率放大装置包括N个功率放大模块和控制模块。每个功率放大模块包括电压输出单元和功率放大单元，其中，电压输出单元包括第一偏置电路和第二偏置电路，第一偏置电路被设置为输出第一电压信号VIN_A，第二偏置电路被设置为输出第二电压信号VIN_B。功率放大单元包括选择器MUX、第一开关管M1、混频器Mixer、第二开关管M2和第三开关管M3。选择器MUX包括对应连接第一偏置电路和第二偏置电路的两个输入端，该选择器MUX还包括指令输入端，该指令输入端与控制模块连接，被设置为接收控制模块输出的指令信号；该选择器MUX的输出端连接第一开关管M1的栅极，第一开关管M1的漏极连接有射频输出端，第一开关管M1的源极连接混频器的输出端；该混频器Mixer的一个输入端被设置为接入本地震荡信号LO，另一个输入端连接第二开关管M2的漏极；第二开关管M2的栅极与控制模块连接，被设置为接收控制模块输出的指令信号；第二开关管M2的源极连接第三开关管M3的漏极，第三开关管M3的栅极被设置为接入基带信号ABB，第三开关管M3的漏极接地。本实施例描述的发射机的工作原理可参见前文的相关说明，此处不再赘述。
本申请实施例提供的功率放大装置包括功率放大模块，每个功率放大模块包括电压输出单元和功率放大单元，通过所述电压输出单元输出第一电压信号和第二电压信号；功率放大单元包括选择器、射频处理电路和第一开关管，通过射频处理电路对所述基带信号进行处理后输出第一射频信号至所述第一开关管的源极，选择器被设置为根据第一开关管的工作状态对应选通第一电压信号或者所述第二电压信号，这里第一电压信号和所述第二电压信号用于在对应的第一开关管工作状态下调节第一开关管的栅极电压，以使得不论第一开关管在导通还是关断状态，第一开关管的三个端口的电压摆幅均在安全的范围内，从而保证了第一开关管的工作寿命。另外，本申请实施例的方案不会消耗电压裕度和降低输出电压线性度，容易实现，因而具有较高的实用和经济价值。
在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述或记载的部分，可以参见其它实施例的相关描述。
以上是对本申请的若干实施方式进行了具体说明，但本申请并不局限于上述实施方式，熟悉本领域的技术人员在不违背本申请精神的。共享条件下还可作出种种等同的变形或替换，这些等同的变形或替换均包括在本申请权利要求所限定的范围内。

Claims (10)

  1. 一种功率放大装置，包括功率放大模块，所述功率放大模块包括电压输出单元和功率放大单元，其中，
    所述电压输出单元被设置为输出第一电压信号和第二电压信号；
    所述功率放大单元包括选择器、射频处理电路和第一开关管，所述选择器的输入端连接所述电压输出单元，所述选择器的输出端连接所述第一开关管的栅极，所述第一开关管的源极连接所述射频处理电路；
    所述射频处理电路被设置为接收基带信号，并对所述基带信号进行处理后，输出第一射频信号至所述第一开关管的源极；
    所述选择器被设置为选通所述第一电压信号和所述第二电压信号中的一个电压信号，并将选通的电压信号输出至所述第一开关管的栅极；
    在所述第一开关管为导通状态的情况下，所述选择器选通所述第一电压信号，所述第一开关管对所述第一射频信号进行放大后，从所述第一开关管的漏极输出第二射频信号；
    在所述第一开关管为关断状态的情况下，所述选择器选通所述第二电压信号。
  2. 根据权利要求1所述的功率放大装置，其中，所述射频处理电路包括混频器，所述混频器被设置为将基带信号与本地振荡信号混频以产生所述第一射频信号。
  3. 根据权利要求2所述的功率放大装置，其中，所述功率放大装置还包括控制模块，所述射频处理电路包括第二开关管；
    所述控制模块被设置为输出指令信号；
    所述第二开关管的栅极被设置为接收所述指令信号，所述第二开关管的源极被设置为接收所述基带信号，所述第二开关管的漏极连接所述混频器；
    所述指令信号为导通指令信号或者关断指令信号，在所述控制模块输出的所述指令信号为所述导通指令信号的情况下，所述第一开关管、所述第二开关管均为导通状态；在所述控制模块输出的所述指令信号为所述关断指令信号的情况下，所述第一开关管、所述第二开关管均为关断状态。
  4. 根据权利要求3所述的功率放大装置，其中，所述选择器连接所述控制模块，以接收所述控制模块输出的所述指令信号；
    在所述控制模块输出的所述指令信号为所述导通指令信号的情况下，所述选择器选通所述第一电压信号；
    在所述控制模块输出的所述指令信号为所述关断指令信号的情况下，所述选择器选通所述第二电压信号。
  5. 根据权利要求2所述的功率放大装置，其中，所述射频处理电路还包括第三开关管，所述第三开关管的栅极被设置为接收所述基带信号，所述第三开关管的源极接地，所述第三开关管的漏极连接所述混频器。
  6. 根据权利要求1所述的功率放大装置，其中，所述电压输出单元包括：
    第一偏置电路，所述第一偏置电路包括第一电阻、第二电阻和第一输出端，所述第一电阻的第一端连接工作电源端，所述第一电阻的第二端连接所述第二电阻的第一端，所述第二电阻的第二端连接地端，所述第一输出端设置在所述第一电阻和所述第二电阻之间，所述第 一电压信号从所述第一输出端输出；
    第二偏置电路，所述第二偏置电路包括第三电阻、第四电阻和第二输出端，所述第三电阻的第一端连接工作电源端，所述第三电阻的第二端连接所述第四电阻的第一端，所述第四电阻的第二端连接地端，所述第二输出端设置在所述第三电阻和所述第四电阻之间，所述第二电压信号从所述第二输出端输出。
  7. 根据权利要求6所述的功率放大装置，其中，所述第二电阻和所述第四电阻均为可变电阻。
  8. 根据权利要求6所述的功率放大装置，其中，所述功率放大装置还包括控制模块，所述控制模块被设置为根据所述第一开关管的饱和电流参数、导通电压阈值、漏源电压参数和电源电压参数，确定所述第一电压信号对应的第一电压值，并根据所述第一电压值调节所述第二电阻的电阻值，以使所述电压输出单元输出满足所述第一电压值的所述第一电压信号；
    所述控制模块还被设置为根据电源电压参数和所述第一开关管的漏极电压参数，确定所述第二电压信号对应的第二电压值，并根据所述第二电压值调节所述第四电阻的电阻值，以使所述电压输出单元输出满足所述第二电压值的所述第二电压信号；
    其中，所述电源电压参数为所述工作电源端的输出电压。
  9. 根据权利要求1所述的功率放大装置，其中，所述功率放大模块的数量为多个，所述功率放大装置还包括控制模块，每个所述功率放大模块分别与所述控制模块连接。
  10. 一种发射机，其特征在于，包括权利要求1-9任一项所述的功率放大装置。
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