WO2023036012A1 - 一种晶圆抛光系统 - Google Patents

一种晶圆抛光系统 Download PDF

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Publication number
WO2023036012A1
WO2023036012A1 PCT/CN2022/115772 CN2022115772W WO2023036012A1 WO 2023036012 A1 WO2023036012 A1 WO 2023036012A1 CN 2022115772 W CN2022115772 W CN 2022115772W WO 2023036012 A1 WO2023036012 A1 WO 2023036012A1
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WIPO (PCT)
Prior art keywords
polishing
wafer
working position
arm
transfer device
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PCT/CN2022/115772
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English (en)
French (fr)
Inventor
杨渊思
徐枭宇
周智鹏
Original Assignee
杭州众硅电子科技有限公司
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Priority to KR1020247005179A priority Critical patent/KR20240031408A/ko
Publication of WO2023036012A1 publication Critical patent/WO2023036012A1/zh

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B27/00—Other grinding machines or devices
    • B24B27/0023—Other grinding machines or devices grinding machines with a plurality of working posts
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B27/00—Other grinding machines or devices
    • B24B27/0076—Other grinding machines or devices grinding machines comprising two or more grinding tools
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/34—Accessories
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B47/00—Drives or gearings; Equipment therefor
    • B24B47/10—Drives or gearings; Equipment therefor for rotating or reciprocating working-spindles carrying grinding wheels or workpieces
    • B24B47/12—Drives or gearings; Equipment therefor for rotating or reciprocating working-spindles carrying grinding wheels or workpieces by mechanical gearing or electric power
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B47/00—Drives or gearings; Equipment therefor
    • B24B47/10—Drives or gearings; Equipment therefor for rotating or reciprocating working-spindles carrying grinding wheels or workpieces
    • B24B47/16—Drives or gearings; Equipment therefor for rotating or reciprocating working-spindles carrying grinding wheels or workpieces performing a reciprocating movement, e.g. during which the sense of rotation of the working-spindle is reversed
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
    • B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents

Definitions

  • the invention belongs to the technical field of semiconductor integrated circuit chip manufacturing, and in particular relates to a wafer polishing system.
  • CMP Chemical Mechanical Planarization
  • chemical mechanical polishing technology has developed into a chemical mechanical polishing technology that integrates on-line measurement, on-line endpoint detection, cleaning and other technologies.
  • it is also a necessary process technology for wafers to transition from 200mm to 300mm or even larger diameters, increase productivity, reduce manufacturing costs, and globally planarize substrates.
  • a chemical mechanical polishing planarization device generally includes a semiconductor device front-end module, a cleaning unit, and a polishing unit.
  • the front-end module of the semiconductor equipment mainly includes the cassette for storing wafers, the transfer robot and the air purification system, etc.
  • the cleaning unit mainly includes a number of megasonic cleaning parts, roller brush cleaning parts, drying parts and wafer transfer between the parts.
  • Devices, etc. the polishing unit usually includes a workbench, a polishing disc, a polishing head, a polishing arm, a dresser, a polishing liquid arm and other components, and each component is arranged on the workbench according to the processing position.
  • the present invention provides a wafer polishing system, each polishing module contained in it is controlled independently, the control flexibility is high, the polishing modules share the wafer transmission channel, the equipment space is compact, and the wafer movement The design of the track makes its transmission efficiency high, thereby improving the polishing efficiency.
  • a wafer polishing system comprising at least one polishing unit
  • the polishing unit includes a wafer transmission channel, and at least two polishing modules, and the polishing modules are located on both sides of the wafer transmission channel;
  • the polishing module includes a polishing platform and a polishing arm, and the polishing arm can drive the wafer to move relative to the polishing platform to realize the polishing process;
  • the wafer transfer device can move between the working positions;
  • polishing arm of a polishing module After the polishing arm of a polishing module obtains the wafer from the working position in the wafer transfer channel, the polishing process is completed, and the wafer is put back to the wafer transfer channel along the first track, and the wafer transfer device moves, Transfer it to another working position, after the polishing arm of another polishing module picks up the wafer from the working position along the second trajectory, another polishing process is completed;
  • the first trajectory, the moving trajectory of the wafer transfer device, and the second trajectory are approximately zigzag.
  • the number of the working positions is the same as the number of polishing arms.
  • polishing arms of the polishing module are arranged symmetrically around the center point of the line connecting the first and last working positions on the wafer transport channel.
  • first trajectory is an arc, or the first trajectory is a straight line, or the first trajectory is an approximate straight line;
  • the second trajectory is an arc, or the second trajectory is a straight line, or The second trajectory is an approximate straight line.
  • the polishing arm carries the wafer to reciprocate along an arc-shaped trajectory relative to the polishing platform to realize the polishing process, and the arc-shaped trajectory falls on a concentric circle with the arc-shaped first trajectory or the second trajectory.
  • the number of the wafer transfer device is one.
  • the number of the polishing modules is two, and the polishing arms of the two polishing modules are close to the wafer transmission channel and arranged along the diagonal of the wafer transmission channel.
  • the first polishing arm obtains the wafer from the first working position, it is polished on the first polishing platform, and after the polishing process of the polishing module is completed, the first polishing arm puts the wafer back to the first working position , the wafer transfer device moves from the first work position to the second work position, the second polishing arm takes the wafer from the second work position, and polishes it on the second polishing platform; at the same time, another wafer is placed on the wafer transfer device , by moving from the second working position to the first working position, the first polishing arm continues to pick up the wafer for polishing.
  • the wafer transfer device moves the wafer from the first working position to the second working position, and after the first polishing arm continues to clean at the first working position, it will go to the first polishing platform after obtaining a new wafer for polishing.
  • the first polishing arm obtains the wafer from the first working position, it is polished on the first polishing platform, and after the polishing process of the polishing module is completed, the first polishing arm puts the wafer back to the first working position , the first polishing arm to the first polishing platform, the wafer transfer device moves from the first working position to the second working position, the second polishing arm obtains the wafer from the second working position, and polishes on the second polishing platform;
  • the circle transfer device moves from the second working position to the first working position, and another wafer is placed on the wafer transfer device, and is picked up by the first polishing arm at the first working position.
  • the first polishing arm cleans at the first working position, and then goes to the first polishing platform.
  • the first polishing arm obtains the wafer from the first working position, it is polished on the first polishing platform, and after the polishing process of the polishing module is completed, the first polishing arm puts the wafer back to the first working position , the wafer transfer device moves from the first work position to the second work position, the second polishing arm takes the wafer from the second work position, and polishes it on the second polishing platform; the wafer transfer device moves from the second work position to The first working position, from the first polishing arm to the first polishing platform, and the other wafer is placed on the wafer transfer device, to be picked up by the first polishing arm to the first working position.
  • the number of the polishing units is two or more, and they are arranged sequentially along the extending direction of the wafer transport channel.
  • the beneficial effects of the present invention are: 1) the polishing arm of each polishing module is independently controlled, with better stability and higher flexibility; 2) the working time of each polishing module can be independently controlled to meet different polishing requirements; 3) The polishing liquid between different polishing modules will not produce cross-effects, and the polishing effect is better; 4) The trajectory of the entire workflow is simple and smooth, the movement of the entire polishing process is compact, and the polishing efficiency is high; 5) Multiple polishing The layout of the units arranged sequentially along the wafer transmission channel can select any number of polishing units, or any number of polishing modules, to carry out the entire polishing process according to needs, which can adapt to different process needs.
  • FIG. 1 is a schematic diagram of a wafer polishing system in the prior art.
  • FIG. 2 is a schematic diagram of a polishing unit in Embodiment 1 of the present invention.
  • FIG. 3 is a schematic diagram of the moving track of the polishing unit belt (the first track is an arc) in Embodiment 1 of the present invention.
  • FIG. 4 is a schematic diagram of the moving track of the polishing unit belt (the first track is a straight line) in Embodiment 1 of the present invention.
  • FIG. 5 is a schematic diagram of the layout of multiple polishing units in Embodiment 1 of the present invention.
  • Fig. 6 is a schematic diagram of movement in Embodiment 1 of the present invention.
  • Fig. 7 is a schematic diagram of movement in Embodiment 2 of the present invention.
  • Fig. 8 is a schematic diagram of movement in Embodiment 3 of the present invention.
  • the polishing unit-1 the wafer transfer channel-2, the polishing module-3, the first polishing platform-311, the second polishing platform-312, the first polishing arm-321, the second polishing arm 322, the first working Position-41, second working position-42, first track-51, moving track of wafer transfer device-52, second track-53.
  • a wafer polishing system comprising at least one polishing unit 1;
  • the polishing unit 1 includes a wafer transfer channel 2, and at least two polishing modules 3, and the polishing module 3 is located on both sides of the wafer transfer channel 2;
  • the polishing module 3 includes a polishing platform and a polishing arm, and the polishing arm can drive the wafer to move relative to the polishing platform to realize the polishing process; the activities here include that the wafer moves synchronously with the polishing arm, and also includes the gap between the wafer and the polishing arm. will move relative to
  • the wafer transfer device can move between the working positions.
  • the number of working positions is the same as the number of polishing arms.
  • the polishing arms of the polishing module 3 are arranged symmetrically around the center point of the connecting line between the working positions at the first and last ends.
  • polishing process is completed on the polishing platform of the polishing module 3; then the polishing process will be completed.
  • the wafer is put back to the wafer transfer channel 2 along the first trajectory 51, and the wafer transfer device moves to transfer the wafer in the wafer transfer channel 2 to another working position; the polishing arm of the other polishing module 3 After obtaining the wafer from another working position in the wafer transfer channel 2 along the second track 52 , the polishing process is completed on the polishing platform of the polishing module 3 .
  • the above-mentioned first trajectory 51 , the moving trajectory 52 of the wafer transfer device, and the second trajectory 53 are approximately in a zigzag shape.
  • the approximation here refers to that the first trajectory 51, the moving trajectory 52 of the wafer transfer device and the second trajectory 53 are not necessarily straight lines, but may be curves, arcs, etc. with small waves, but enlarged Afterwards, the overall trend of its movement is a straight line.
  • the number of wafer transfer devices is one, and the number of polishing modules 3 in one polishing unit 1 is two, and the polishing arms of the two polishing modules 3 are all close to the wafer transfer channel 2, and along the The diagonal arrangement of the wafer transfer channel 2 is shown in FIG. 2 .
  • the working station includes a first working station 41 and a second working station 42
  • the polishing arm includes a first polishing arm 321 and a second polishing arm 322
  • the polishing platform includes a first polishing platform 311 and a second polishing platform 312 .
  • the first trajectory 51 is an arc
  • the second trajectory 53 is also an arc, as shown in FIG. 3 .
  • the first polishing arm 321 carries the wafer to reciprocate along the arc-shaped track relative to the first polishing platform 311 to realize the polishing process.
  • the arc-shaped track and the first track 51 fall on the concentric circle, or even fall on the same circle. Or produce relative motion between the first polishing arm 321 and the wafer to form an arc track, and then both stop relative motion, and the first polishing arm 321 will transfer the wafer along the first track 51;
  • the second polishing arm 322 carries the wafer to reciprocate along the arc track relative to the second polishing platform 312 to realize the polishing process.
  • the arc track and the second track 53 fall on the concentric circle, or even fall on the same circumference; or the second polishing There is relative movement between the arm 322 and the wafer to form an arc track, and then the two stop the relative movement, and the second polishing arm 322 transfers the wafer along the first track 51 .
  • the first track 51 is a straight line, or to be more precise, an approximate straight line.
  • the first polishing arm 321 when carrying the wafer, relative movement occurs between the wafer and the first polishing arm 321. movement, so that the first trajectory 51 is a straight line; the second trajectory 53 is also a straight line, or to be more precise, an approximate straight line.
  • the second polishing arm 322 when the second polishing arm 322 is moving with the wafer, the distance between the wafer and the second polishing arm 322 Relative movement occurs between them, so that the second track 53 is a straight line.
  • the first trajectory 51 and the second trajectory 53 are straight lines, so that the relative movement of the wafer is the shortest and the polishing efficiency is higher.
  • the first polishing arm 321 is moving with the wafer, there is a relative movement between the wafer and the first polishing arm 321, and the distance of the relative movement can be set as required so that the first track 51 is an irregular line, similarly , the second track 53 can also be an irregular line.
  • polishing units 1 there may be two or more polishing units 1 , which are sequentially arranged along the extending direction of the wafer transport channel 2 .
  • the workflow of the wafer polishing system can be: after the first polishing arm 321 acquires the wafer at the first working position 41, it polishes on the first polishing platform 311, After the polishing process of the polishing module 3 is completed, the first polishing arm 321 puts the wafer back to the first working position 41, and the wafer transfer device (not shown in the figure) moves from the first working position 41 to the second working position.
  • the first polishing arm 321 can continue at the first working position 41, or can complete cleaning here; after the second polishing arm 322 picks up the wafer from the second working position 42, it polishes on the second polishing platform 312 At the same time, another wafer is placed on the wafer transfer device, which can be done by means of a manipulator, by which it moves from the second working position 42 to the first working position 41, and the first polishing arm 321 continues to work in the first working position. Bit 41 acquires the wafer for polishing.
  • the above-mentioned workflow setting makes 1) in the case that the first polishing arm 321 does not need to be turned back, the wafer can be transported between the first working position 41 and the second working position 42 to realize continuous and in-situ carrying of the wafer , each time the first polishing arm 321 rotates to the wafer transfer channel 2, it completes one out-of-wafer and one-in-wafer for the polishing platform; With the flexible movement between the second working positions 42, the wafer transfer device has been utilized to the maximum, and each station completes a wafer out of the polishing platform and a wafer in; 3) the first polishing arm 321 , the second polishing arm 322 and the wafer transfer device do not take empty strokes, and through this ingenious design, the utilization rate of space, time and components are all maximized.
  • the layout of this embodiment is the same as that of Embodiment 1, the difference lies in the workflow of the wafer polishing system, which may be: after the first polishing arm 321 acquires the wafer at the first working position 41, Polishing is carried out on the first polishing platform 311, after the polishing process of the polishing module 3 is completed, the first polishing arm 321 puts the wafer back to the first working position 41, and the first polishing arm 321 turns back to the first polishing platform 311 , the wafer transfer device moves from the first work position 41 to the second work position 42; after the second polishing arm 322 acquires the wafer from the second work position 42, it is polished on the second polishing platform 312; the empty wafer transfer The device moves from the second working position 42 to the first working position 41, another wafer is placed on the wafer transfer device, and the first polishing arm 321 rotates from the first polishing platform 311 to the first working position 41 to obtain the wafer for polishing .
  • the first polishing arm 321 can rotate from the first polishing platform 311 to the first working position 41 for cleaning. After cleaning, the first polishing arm 321 turns back to the first working position 41. A polishing platform 311 is waiting for the next rotation to the first working position 41 .
  • the first polishing arm 321 still stays on the first polishing platform 311 until an empty wafer transfer device moves from the second working position 42 to the first polishing platform 311.
  • the first polishing arm 321 rotates from the first polishing platform 311 to the first working position 41 for cleaning. After cleaning, the wafer transfer device moves to the first working position 41, and the first polishing arm 321 directly obtains the wafer. The circle is polished.
  • the above workflow is set so that the first polishing arm 321 returns to the first polishing platform 311 and then transfers to the first working position 41 to obtain the wafer. There is an avoidance process in the first polishing arm 321, so that the wafer is placed on the first working position 41 There are more possibilities for the process, and the space obstruction will not be caused by the stay of the first polishing arm 321.
  • the layout of this embodiment is the same as that of Embodiment 1, the difference lies in the workflow of the wafer polishing system, which may be: after the first polishing arm 321 acquires the wafer at the first working position 41, Polishing is performed on the first polishing platform 311. After the polishing process of the polishing module 3 is completed, the first polishing arm 321 puts the wafer back to the first working position 41, and the wafer transfer device moves from the first working position 41 to the second working position.
  • the first polishing arm 321 Before another wafer is placed on the wafer transfer device, it is enough for the first polishing arm 321 to finish cleaning, which may be during the time period when the wafer transfer device moves from the first working position 41 to the second working position 42, or It may be a period of time during which the wafer is polished on the second polishing platform 312 , or a period of time during which the wafer transfer device moves from the second working position 42 to the first working position 41 .
  • the above workflow is set so that the first polishing arm 321 returns to the first polishing platform 311 and then transfers to the first working position 41 to obtain the wafer. There is an avoidance process in the first polishing arm 321, so that the wafer is placed on the first working position 41 There are more possibilities in the process, and the space will not be hindered by the stay of the first polishing arm 321, and the adaptability is better.

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

一种晶圆抛光系统，至少包括一个抛光单元（1）；抛光单元（1）包括晶圆传输通道（2）及至少两个抛光模组（3），抛光模组（3）位于晶圆传输通道（2）的两侧；一个抛光模组（3）的抛光臂从晶圆传输通道（2）内的工作位上获取晶圆后，完成抛光工艺，然后将晶圆沿第一轨迹（51）放回至晶圆传输通道（2），晶圆传递装置移动，将晶圆转移至另一工作位，另一抛光模组的抛光臂沿第二轨迹（53）从该工作位获取晶圆后，完成另一抛光工艺；第一轨迹（51），晶圆传递装置的移动轨迹（52），及第二轨迹（53）的走向呈近似Z字形。晶圆抛光系统稳定性更好，灵活度高，抛光效果更佳。

Description

一种晶圆抛光系统 技术领域
本发明属于半导体集成电路芯片制造技术领域，尤其是涉及一种晶圆抛光系统。
背景技术
化学机械平坦化(Chemical Mechanical Planarization,CMP)设备是集成电路制造领域的七大关键设备之一。
目前，化学机械抛光技术已经发展成集在线量测、在线终点检测、清洗等技术于一体的化学机械抛光技术，是集成电路向微细化、多层化、薄型化、平坦化工艺发展的产物。同时也是晶圆由200mm向300mm乃至更大直径过渡、提高生产率、降低制造成本、衬底全局平坦化所必需的工艺技术。
化学机械抛光平坦化设备通常包括半导体设备前端模块、清洗单元和抛光单元。半导体设备前端模块主要包括存放晶圆的片盒、传片机械手和空气净化系统等；清洗单元主要包括数量不等的兆声波清洗部件、滚刷清洗部件、干燥部件和各部件之间传输晶圆的装置等；抛光单元通常包括工作台、抛光盘、抛光头、抛光臂、修整器、抛光液臂等部件，每个部件按照工艺加工位置布置在工作台上。实际的晶圆加工过程中发现，抛光单元与清洗、晶圆运输等模块的空间布置对于化学机械平坦化设备整体的抛光产出有极大的影响；而晶圆在抛光单元与外部以及在抛光单元之间的传输通常依靠装卸台来实现。
关于装卸台与抛光单元的空间布局，市面上大多采用装卸台与 三个抛光单元为正方形布局的形式。如图1所示，4个抛光头固定在十字旋转工作台上，也就意味着一片晶圆从进入抛光区域后就某个抛光头一一对应，且一个装卸台需要给三个抛光单元提供装卸服务，抛光头和抛光台数量不可调整，每个抛光头的抛光时间不可单独控制，时效性差，灵活度低，不同抛光台上的液体容易溅落产生交叉影响，影响抛光效果，工艺过程复杂。
发明内容
为了克服现有技术的不足，本发明提供一种晶圆抛光系统，其包含的每个抛光模组单独控制，控制灵活度高，抛光模组共用晶圆传输通道，设备空间紧凑，晶圆活动轨迹的设计使得其传输效率高，进而提高了抛光效率。
本发明解决其技术问题所采用的技术方案是：一种晶圆抛光系统，至少包括一个抛光单元；
所述抛光单元包括晶圆传输通道，及至少两个抛光模组，所述抛光模组位于晶圆传输通道的两侧；
所述抛光模组包括抛光平台和抛光臂，所述抛光臂可带动晶圆相对抛光平台活动，以实现抛光工艺；
所述晶圆传输通道上具有至少两个工作位，晶圆传递装置可在所述工作位之间移动；
一个抛光模组的抛光臂从所述晶圆传输通道内的工作位上获取晶圆后，完成该抛光工艺，将晶圆沿第一轨迹放回至晶圆传输通道，晶圆传递装置移动，将其转移至另一工作位，另一抛光模组的抛光臂 沿第二轨迹从该工作位获取晶圆后，完成另一抛光工艺；
所述第一轨迹，晶圆传递装置的移动轨迹，及第二轨迹的走向呈近似Z字形。
进一步的，所述工作位的数量与抛光臂的数量相同。
进一步的，所述抛光模组的抛光臂以晶圆传输通道上首尾两端工作位的连线中心点为中心对称设置。
进一步的，所述第一轨迹为弧线，或者所述第一轨迹为直线，或者所述第一轨迹为近似直线；所述第二轨迹为弧线，或者所述第二轨迹为直线，或者所述第二轨迹为近似直线。
进一步的，所述抛光臂带着晶圆相对抛光平台沿弧形轨迹做往复运动，实现抛光工艺，该弧形轨迹与所述弧线形的第一轨迹或第二轨迹落在同心圆上。
进一步的，所述晶圆传递装置的数量为一个。
进一步的，所述抛光模组的数量为两个，且两个抛光模组的抛光臂均靠近晶圆传输通道，且沿晶圆传输通道的对角设置。
进一步的，第一抛光臂自第一工作位获取晶圆后，在第一抛光平台上进行抛光，完成该抛光模组的抛光工艺后，第一抛光臂将晶圆放回至第一工作位，晶圆传递装置从第一工作位移动至第二工作位，第二抛光臂自第二工作位获取晶圆，在第二抛光平台上进行抛光；同时另一晶圆放置在晶圆传递装置，通过其从第二工作位移动至第一工作位，第一抛光臂继续获取晶圆进行抛光。
进一步的，所述晶圆传递装置将晶圆从第一工作位移动至第二工 作位，第一抛光臂继续在第一工作位完成清洗后，待获取新的晶圆后至第一抛光平台进行抛光。
进一步的，第一抛光臂自第一工作位获取晶圆后，在第一抛光平台上进行抛光，完成该抛光模组的抛光工艺后，第一抛光臂将晶圆放回至第一工作位，第一抛光臂至第一抛光平台，晶圆传递装置从第一工作位移动至第二工作位，第二抛光臂自第二工作位获取晶圆，在第二抛光平台上进行抛光；晶圆传递装置从第二工作位移动至第一工作位，另一晶圆放置在晶圆传递装置上，待第一抛光臂至第一工作位获取。
进一步的，晶圆传递装置从第一工作位移走后，所述第一抛光臂在第一工作位进行清洗，再至第一抛光平台。
进一步的，第一抛光臂自第一工作位获取晶圆后，在第一抛光平台上进行抛光，完成该抛光模组的抛光工艺后，第一抛光臂将晶圆放回至第一工作位，晶圆传递装置从第一工作位移动至第二工作位，第二抛光臂自第二工作位获取晶圆，在第二抛光平台上进行抛光；晶圆传递装置从第二工作位移动至第一工作位，第一抛光臂至第一抛光平台，另一晶圆放置在晶圆传递装置上，待第一抛光臂至第一工作位获取。
进一步的，另一晶圆放置在晶圆传递装置之前，所述第一抛光臂进行清洗。
进一步的，所述抛光单元的数量为两个或多个，其沿所述晶圆传输通道延伸的方向依次布设。
本发明的有益效果是，1)每个抛光模组的抛光臂独立控制，稳定性更好，灵活度更高；2)每个抛光模组的工作时间可独立控制，适应不同的抛光需求；3)不同抛光模组之间的抛光液不会产生交叉影响，抛光效果更佳；4)整个工作流程的轨迹简单、流畅，整个抛光工艺的运动行程紧凑，抛光效率高；5)多个抛光单元沿着晶圆传输通道依次布设的布局可以根据需要选择任意数量的抛光单元，或者说选择任意数量的抛光模组，进行整个抛光流程，可以适应不同的工艺需要。
附图说明
图1为现有技术中晶圆抛光系统的简示图。
图2为本发明实施例一中抛光单元的示意图。
图3为本发明实施例一中抛光单元带移动轨迹(第一轨迹为弧线)的示意图。
图4为本发明实施例一中抛光单元带移动轨迹(第一轨迹为直线)的示意图。
图5为本发明实施例一中多个抛光单元布设示意图。
图6为本发明实施例一中的运动示意图。
图7为本发明实施例二中的运动示意图。
图8为本发明实施例三中的运动示意图。
其中，抛光单元-1，晶圆传输通道-2，抛光模组-3，第一抛光平台-311，第二抛光平台-312，第一抛光臂-321，第二抛光臂322，第一工作位-41，第二工作位-42，第一轨迹-51，晶圆传递装置的移动轨 迹-52，第二轨迹-53。
具体实施方式
为了使本技术领域的人员更好的理解本发明方案，下面将结合本发明实施例中的附图，对发明实施例中的技术方案进行清楚、完整的描述，显然，所描述的实施例仅仅是本发明的一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都应当属于本发明保护的范围。
实施例一
一种晶圆抛光系统，至少包括一个抛光单元1；
如图2所示，抛光单元1包括晶圆传输通道2，及至少两个抛光模组3，抛光模组3位于晶圆传输通道2的两侧；
抛光模组3包括抛光平台和抛光臂，抛光臂可以带动晶圆相对抛光平台活动，以实现抛光工艺；此处的活动包括晶圆随着抛光臂同步运动，也包括晶圆和抛光臂之间会相对运动；
晶圆传输通道2上具有至少两个工作位，晶圆传递装置可以在工作位之间移动。
在本实施例中，工作位的数量与抛光臂的数量相同。抛光模组3的抛光臂以首尾两端工作位的连线中心点为中心对称设置。
一个抛光模组3的抛光臂沿着第一轨迹51、从晶圆传输通道2内的工作位上获取晶圆后，在该抛光模组3的抛光平台上完成该抛光工艺；接着将完成抛光的晶圆沿着第一轨迹51放回至晶圆传输通道 2，晶圆传递装置移动，将晶圆传输通道2内的晶圆转移至另一工作位；另一个抛光模组3的抛光臂沿着第二轨迹52、从晶圆传输通道2内的另一工作位上获取晶圆后，在该抛光模组3的抛光平台上完成该次的抛光工艺。
如图3所示，上述的第一轨迹51，晶圆传递装置的移动轨迹52，及第二轨迹53的走向呈近似Z字形。此处的近似指的是，第一轨迹51、晶圆传递装置的移动轨迹52和第二轨迹53不一定为十分平直的直线，可以是带有小波浪的曲线、弧线等，但是放大之后看，其移动的整体趋势是直线。
在本实施例中晶圆传递装置的数量为一个，一个抛光单元1中抛光模组3的数量为两个，且两个抛光模组3的抛光臂均靠近晶圆传输通道2，并且沿着晶圆传输通道2的对角设置，如图2所示。即工作位包括第一工作位41和第二工作位42，抛光臂包括第一抛光臂321和第二抛光臂322，抛光平台包括第一抛光平台311和第二抛光平台312。
第一轨迹51为弧线，第二轨迹53也为弧线，如图3所示。此时第一抛光臂321带着晶圆相对第一抛光平台311沿着弧形轨迹做往复运动，实现抛光工艺，该弧形轨迹与第一轨迹51落在同心圆上，甚至落在同一圆周上；或者第一抛光臂321和晶圆之间产生相对运动，形成弧形轨迹，再两者停止相对运动，由第一抛光臂321带着晶圆沿第一轨迹51转移；第二抛光臂322带着晶圆相对第二抛光平台312沿着弧形轨迹做往复运动，实现抛光工艺，该弧形轨迹与第二轨迹 53落在同心圆上，甚至落在同一圆周上；或者第二抛光臂322和晶圆之间产生相对运动，形成弧形轨迹，再两者停止相对运动，由第二抛光臂322带着晶圆沿第一轨迹51转移。
或者，如图4所示，第一轨迹51为直线，或者确切地说是近似直线，此时第一抛光臂321带着晶圆活动的同时，晶圆和第一抛光臂321之间发生相对运动，使得第一轨迹51为直线；第二轨迹53也为直线，或者确切地说是近似直线，此时第二抛光臂322带着晶圆活动的同时，晶圆和第二抛光臂322之间发生相对运动，使得第二轨迹53为直线。第一轨迹51和第二轨迹53为直线，使得晶圆的相对移动行程最短，抛光效率更高。
此外，第一抛光臂321带着晶圆活动的同时，晶圆和第一抛光臂321之间发生相对运动，相对运动的距离可以根据需要设置，使得第一轨迹51为不规则线条，同理，第二轨迹53也可为不规则线条。
如图5所示，抛光单元1的数量可以为两个或者多个，其沿着晶圆传输通道2延伸的方向依次布设。
如图6所示，在上述系统布设的前提下，晶圆抛光系统的工作流程可以是：第一抛光臂321在第一工作位41获取晶圆后，在第一抛光平台311上进行抛光，完成该抛光模组3的抛光工艺后，第一抛光臂321将晶圆放回至第一工作位41，晶圆传递装置(图中未示出)从第一工作位41移动至第二工作位42，第一抛光臂321可以继续在第一工作位41，或可以在此处完成清洗；第二抛光臂322从第二工作位42获取晶圆后，在第二抛光平台312上进行抛光；与此同时， 另一个晶圆放置在晶圆传递装置上，此处可以借助机械手完成，通过其从第二工作位42移动至第一工作位41，第一抛光臂321继续在第一工作位41获取晶圆进行抛光。
上述工作流程设置，使得1)在第一抛光臂321无需转回的情况下，可通过晶圆在第一工作位41和第二工作位42之间的传输，实现连续、原地携带晶圆，第一抛光臂321每次旋转至晶圆传输通道2都完成对于抛光平台的1次出晶圆和1次进晶圆；2)也体现出了晶圆传递装置在第一工作位41和第二工作位42之间的灵活运动，晶圆传递装置得到了最大利用，在每个工位都完成1次对于抛光平台的出晶圆和1次进晶圆；3)第一抛光臂321、第二抛光臂322和晶圆传递装置都不走空行程，通过该巧妙的设计，空间、时间和部件的利用率都达到最大化。
实施例二
如图7所示，本实施例与实施例一的布局相同，不同之处在于晶圆抛光系统的工作流程，其可以是：第一抛光臂321在第一工作位41获取晶圆后，在第一抛光平台311上进行抛光，完成该抛光模组3的抛光工艺后，第一抛光臂321将晶圆放回至第一工作位41，第一抛光臂321转回至第一抛光平台311，晶圆传递装置从第一工作位41移动至第二工作位42；第二抛光臂322从第二工作位42获取晶圆后，在第二抛光平台312上进行抛光；空的晶圆传递装置从第二工作位42移动至第一工作位41，另一个晶圆放置在晶圆传递装置上，第一抛光臂321从第一抛光平台311转动至第一工作位41获取晶圆进行 抛光。
晶圆传递装置从第一工作位41移走后，第一抛光臂321可以从第一抛光平台311转动至第一工作位41进行清洗，完成清洗后，第一抛光臂321再转回至第一抛光平台311，等待下一次的转动至第一工作位41。当然也可以是，晶圆传递装置从第一工作位41移走后，第一抛光臂321仍然停留在第一抛光平台311，等到空的晶圆传递装置从第二工作位42移动至第一工作位41之前，第一抛光臂321从第一抛光平台311转动至第一工作位41进行清洗，完成清洗后，晶圆传递装置移动至第一工作位41，第一抛光臂321直接获取晶圆进行抛光。
上述工作流程设置，使得第一抛光臂321回到第一抛光平台311再转至第一工作位41获取晶圆，第一抛光臂321存在一个避让过程，使得晶圆放置到第一工作位41的过程存在更多可能性，不会因为第一抛光臂321的停留而造成空间阻碍。
实施例三
如图8所示，本实施例与实施例一的布局相同，不同之处在于晶圆抛光系统的工作流程，其可以是：第一抛光臂321在第一工作位41获取晶圆后，在第一抛光平台311上进行抛光，完成该抛光模组3的抛光工艺后，第一抛光臂321将晶圆放回至第一工作位41，晶圆传递装置从第一工作位41移动至第二工作位42；第二抛光臂322从第二工作位42获取晶圆后，在第二抛光平台312上进行抛光；空的 晶圆传递装置从第二工作位42移动至第一工作位41，第一抛光臂321转回至第一抛光平台311，另一个晶圆放置在晶圆传递装置上，第一抛光臂321从第一抛光平台311转动至第一工作位41获取晶圆进行抛光。
在另一个晶圆放置在晶圆传递装置上之前，第一抛光臂321完成清洗即可，其可以是在晶圆传递装置从第一工作位41移动至第二工作位42的时间段，也可以是晶圆在第二抛光平台312上抛光的时间段，还可以是晶圆传递装置从第二工作位42移动至第一工作位41的时间段。
上述工作流程设置，使得第一抛光臂321回到第一抛光平台311再转至第一工作位41获取晶圆，第一抛光臂321存在一个避让过程，使得晶圆放置到第一工作位41的过程存在更多可能性，不会因为第一抛光臂321的停留而造成空间阻碍，适应性更佳。
上述具体实施方式用来解释说明本发明，而不是对本发明进行限制，在本发明的精神和权利要求的保护范围内，对本发明作出的任何修改和改变，都落入本发明的保护范围。

Claims (14)

  1. 一种晶圆抛光系统，其特征在于：
    至少包括一个抛光单元；
    所述抛光单元包括晶圆传输通道，及至少两个抛光模组，所述抛光模组位于晶圆传输通道的两侧；
    所述抛光模组包括抛光平台和抛光臂，所述抛光臂可带动晶圆相对抛光平台活动，以实现抛光工艺；
    所述晶圆传输通道上具有至少两个工作位，晶圆传递装置可在所述工作位之间移动；
    一个抛光模组的抛光臂从所述晶圆传输通道内的工作位上获取晶圆后，完成该抛光工艺，将晶圆沿第一轨迹放回至晶圆传输通道，晶圆传递装置移动，将其转移至另一工作位，另一抛光模组的抛光臂沿第二轨迹从该工作位获取晶圆后，完成另一抛光工艺；
    所述第一轨迹，晶圆传递装置的移动轨迹，及第二轨迹的走向呈近似Z字形。
  2. 根据权利要求1所述的晶圆抛光系统，其特征在于：所述工作位的数量与抛光臂的数量相同。
  3. 根据权利要求2所述的晶圆抛光系统，其特征在于：所述抛光模组的抛光臂以晶圆传输通道上首尾两端工作位的连线中心点为中心对称设置。
  4. 根据权利要求1所述的晶圆抛光系统，其特征在于：所述第一轨迹为弧线，或者所述第一轨迹为直线，或者所述第一轨迹为近似直线；所述第二轨迹为弧线，或者所述第二轨迹为直线，或者所述第二轨迹为近似直线。
  5. 根据权利要求4所述的晶圆抛光系统，其特征在于：所述抛光臂带着晶圆相对抛光平台沿弧形轨迹做往复运动，实现抛光工艺，该弧形轨迹与所述弧线形的第一轨迹或第二轨迹落在同心圆上。
  6. 根据权利要求1所述的晶圆抛光系统，其特征在于：所述晶圆传递装置的数量为一个。
  7. 根据权利要求2所述的晶圆抛光系统，其特征在于：所述抛光模组的数量为两个，且两个抛光模组的抛光臂均靠近晶圆传输通道，且沿晶圆传输通道的对角设置。
  8. 根据权利要求7所述的晶圆抛光系统，其特征在于：第一抛光臂自第一工作位获取晶圆后，在第一抛光平台上进行抛光，完成该抛光模组的抛光工艺后，第一抛光臂将晶圆放回至第一工作位，晶圆传递装置从第一工作位移动至第二工作位，第二抛光臂自第二工作位获取晶圆，在第二抛光平台上进行抛光；同时另一晶圆放置在晶圆传递装置，通过其从第二工作位移动至第一工作位，第一抛光臂继续获取晶圆进行抛光。
  9. 根据权利要求8所述的晶圆抛光系统，其特征在于：所述晶圆传递装置将晶圆从第一工作位移动至第二工作位，第一抛光臂继续在第一工作位完成清洗后，待获取新的晶圆后至第一抛光平台进行抛光。
  10. 根据权利要求7所述的晶圆抛光系统，其特征在于：第一抛光臂自第一工作位获取晶圆后，在第一抛光平台上进行抛光，完成该抛光模组的抛光工艺后，第一抛光臂将晶圆放回至第一工作位，第一抛光臂至第一抛光平台，晶圆传递装置从第一工作位移动至第二工作位，第二抛光臂自第二工作位获取晶圆，在第二抛光平台上进行抛光；晶圆传递装置从第 二工作位移动至第一工作位，另一晶圆放置在晶圆传递装置上，待第一抛光臂至第一工作位获取。
  11. 根据权利要求10所述的晶圆抛光系统，其特征在于：晶圆传递装置从第一工作位移走后，所述第一抛光臂在第一工作位进行清洗，再至第一抛光平台。
  12. 根据权利要求7所述的晶圆抛光系统，其特征在于：第一抛光臂自第一工作位获取晶圆后，在第一抛光平台上进行抛光，完成该抛光模组的抛光工艺后，第一抛光臂将晶圆放回至第一工作位，晶圆传递装置从第一工作位移动至第二工作位，第二抛光臂自第二工作位获取晶圆，在第二抛光平台上进行抛光；晶圆传递装置从第二工作位移动至第一工作位，第一抛光臂至第一抛光平台，另一晶圆放置在晶圆传递装置上，待第一抛光臂至第一工作位获取。
  13. 根据权利要求12所述的晶圆抛光系统，其特征在于：另一晶圆放置在晶圆传递装置之前，所述第一抛光臂进行清洗。
  14. 根据权利要求1所述的晶圆抛光系统，其特征在于：所述抛光单元的数量为两个或多个，其沿所述晶圆传输通道延伸的方向依次布设。
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CN113910099A (zh) * 2021-09-07 2022-01-11 杭州众硅电子科技有限公司 一种晶圆抛光系统
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Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002141317A (ja) * 1993-09-21 2002-05-17 Toshiba Corp ポリッシング装置及び方法
CN109037101A (zh) * 2018-07-13 2018-12-18 清华大学 晶圆加工设备
CN109015314A (zh) * 2018-09-07 2018-12-18 杭州众硅电子科技有限公司 一种化学机械平坦化设备
CN109304670A (zh) * 2018-09-20 2019-02-05 杭州众硅电子科技有限公司 一种柔性的抛光装卸部件模块
TW202046433A (zh) * 2019-06-04 2020-12-16 大陸商杭州眾硅電子科技有限公司 化學機械平坦化晶圓傳輸設備及其使用方法
CN113910099A (zh) * 2021-09-07 2022-01-11 杭州众硅电子科技有限公司 一种晶圆抛光系统
CN216781428U (zh) * 2021-09-07 2022-06-21 杭州众硅电子科技有限公司 晶圆抛光系统

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004106084A (ja) * 2002-09-17 2004-04-08 Ebara Corp ポリッシング装置及び基板処理装置
CN105598827B (zh) * 2016-01-05 2018-05-22 天津华海清科机电科技有限公司 化学机械抛光机
CN111524833B (zh) * 2020-04-28 2023-04-21 华海清科股份有限公司 一种化学机械抛光系统和化学机械抛光方法
CN212240554U (zh) * 2020-04-28 2020-12-29 华海清科股份有限公司 一种化学机械抛光系统

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002141317A (ja) * 1993-09-21 2002-05-17 Toshiba Corp ポリッシング装置及び方法
CN109037101A (zh) * 2018-07-13 2018-12-18 清华大学 晶圆加工设备
CN109015314A (zh) * 2018-09-07 2018-12-18 杭州众硅电子科技有限公司 一种化学机械平坦化设备
CN109304670A (zh) * 2018-09-20 2019-02-05 杭州众硅电子科技有限公司 一种柔性的抛光装卸部件模块
TW202046433A (zh) * 2019-06-04 2020-12-16 大陸商杭州眾硅電子科技有限公司 化學機械平坦化晶圓傳輸設備及其使用方法
CN113910099A (zh) * 2021-09-07 2022-01-11 杭州众硅电子科技有限公司 一种晶圆抛光系统
CN216781428U (zh) * 2021-09-07 2022-06-21 杭州众硅电子科技有限公司 晶圆抛光系统

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