WO2023026389A1 - On-vehicle semiconductor switch device - Google Patents

On-vehicle semiconductor switch device Download PDF

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Publication number
WO2023026389A1
WO2023026389A1 PCT/JP2021/031122 JP2021031122W WO2023026389A1 WO 2023026389 A1 WO2023026389 A1 WO 2023026389A1 JP 2021031122 W JP2021031122 W JP 2021031122W WO 2023026389 A1 WO2023026389 A1 WO 2023026389A1
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WO
WIPO (PCT)
Prior art keywords
electrode
semiconductor switch
sealing body
lead portion
signal
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Application number
PCT/JP2021/031122
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French (fr)
Japanese (ja)
Inventor
一輝 増田
Original Assignee
株式会社オートネットワーク技術研究所
住友電装株式会社
住友電気工業株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 株式会社オートネットワーク技術研究所, 住友電装株式会社, 住友電気工業株式会社 filed Critical 株式会社オートネットワーク技術研究所
Priority to PCT/JP2021/031122 priority Critical patent/WO2023026389A1/en
Publication of WO2023026389A1 publication Critical patent/WO2023026389A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon

Definitions

  • the present disclosure relates to a vehicle-mounted semiconductor switch device.
  • Patent Document 1 discloses a battery pack.
  • This battery pack includes a battery, a protective FET connected in series with the battery, and a voltage detection circuit that detects the voltage between the drain and source of the FET.
  • This battery pack detects overcurrent based on the voltage detected by the voltage detection circuit and cuts off the current flowing through the FET.
  • the present disclosure provides a technology that facilitates the release of heat generated by semiconductor switches to the outside.
  • a vehicle-mounted semiconductor switch device of the present disclosure is controlled by an on-signal and an off-signal output from a vehicle-mounted drive circuit, and switches between an on state and an off state between a first conducting path and a second conducting path.
  • a vehicle-mounted semiconductor switch device having a semiconductor switch, wherein the semiconductor switch includes a semiconductor portion, a first electrode, a second electrode, and a third electrode to which the on signal and the off signal are input from the drive circuit.
  • an electrode a sealing body covering the semiconductor part, a first lead part electrically connected to the first electrode and protruding outside the sealing body, electrically connected to the second electrode, A width of a second lead portion protruding to the outside of the encapsulant, and an exposed surface formed as part of the first electrode or electrically connected to the first electrode and exposed to the outside of the encapsulant. is larger than the width of the first lead portion, and the semiconductor switch has a width from the first electrode side to the second electrode side when the ON signal is input to the third electrode. when the off signal is input to the third electrode, the off state is set to cut off the flow of current from the first electrode side to the second electrode side, The conductor portion is electrically connected to the first conductive path by joining the exposed surface to the first conductive path.
  • the heat generated by the semiconductor switch can be easily released to the outside.
  • FIG. 1 is a circuit diagram schematically showing the configuration of a vehicle-mounted semiconductor switch device.
  • FIG. 2 is a plan view of a semiconductor switch. 3 is a cross-sectional view taken along the line AA of FIG. 2.
  • FIG. 4 is a bottom view of the semiconductor switch.
  • FIG. 5 is a perspective view of a vehicle-mounted semiconductor switch device.
  • a vehicle-mounted semiconductor switch device of the present disclosure is controlled by an on-signal and an off-signal output from a vehicle-mounted drive circuit, and an on state and an off state are established between a first conducting path and a second conducting path.
  • the semiconductor switch device includes a semiconductor portion, a first electrode, a second electrode, and the ON signal and the OFF signal from the drive circuit. a sealing body covering the semiconductor part; a first lead part electrically connected to the first electrode and protruding outside the sealing body; a second lead portion that is connected and protrudes outside the encapsulant; and an exposure that is configured as part of the first electrode or is electrically connected to the first electrode and is exposed to the outside of the encapsulant.
  • the semiconductor switch moves from the first electrode side to the second lead portion when the ON signal is input to the third electrode.
  • the ON state permits current flow to the electrode side
  • the OFF state cuts off current flow from the first electrode side to the second electrode side when the OFF signal is input to the third electrode.
  • the exposed surface of the conductor portion is joined to the first conductive path and electrically connected to the first conductive path.
  • the conductor portion having a width larger than that of the first lead portion is joined to the first conductive path, the distance from the conductor portion to the first conductive path is greater than in the case where the first lead portion is joined to the first conductive path. Heat can be efficiently transferred to one conduction path. Therefore, according to this configuration, the heat generated by the semiconductor switch can be easily released to the outside.
  • the first conductive path may include a busbar, and the conductor portion may be joined to the busbar.
  • the first conductor includes a bus bar
  • a large current flows through the semiconductor switch and heat is likely to be generated. Therefore, according to this configuration, the heat generated by the semiconductor switch can be easily released to the outside.
  • the conductor may be plate-shaped, and one side of the conductor in the thickness direction may be joined to the first conductive path.
  • heat generated in the semiconductor section can be more efficiently transmitted to the first conductive path and more efficiently released to the outside.
  • the vehicle-mounted semiconductor switch device has a fourth lead portion electrically connected to the second electrode and protruding outside the sealing body, and a circuit board provided with a voltage detection portion.
  • You may have The conductor portion may be arranged on one side of the sealing body in a predetermined direction.
  • a first extending portion extending in the other side in the predetermined direction may be provided outside the sealing body in the first lead portion.
  • a fourth extending portion extending in the other side in the predetermined direction may be provided outside the sealing body in the fourth lead portion.
  • the first conductive path may be provided on one side of the sealing body in the predetermined direction.
  • the circuit board may be joined to the first extending portion and the fourth extending portion on the other side of the sealing body in the predetermined direction.
  • the circuit board on which the voltage detection section is provided can be arranged away from the current path connecting the first conductive path and the second conductive path. Therefore, it is possible to suppress the influence of the heat generated in the current path on the circuit board.
  • the width of the joint region joined to the first conductive path in the conductor portion may be larger than the width of the first lead portion.
  • a vehicle-mounted semiconductor switch device 1 (hereinafter also referred to as "semiconductor switch device 1") shown in FIG. 1 is a device mounted in a vehicle such as an automobile.
  • the semiconductor switch device 1 has a first conductive path 11 , a second conductive path 12 , a semiconductor switch 13 and a circuit board 14 .
  • the first conducting path 11 and the second conducting path 12 are provided between a power supply unit 90 mounted on a vehicle and a load 91, and function as part of a power supply path that supplies power from the power supply unit 90 to the load 91. .
  • a semiconductor switch 13 is provided between the first conductive path 11 and the second conductive path 12 .
  • the first conductive path 11 is arranged closer to the power supply unit 90 than the semiconductor switch 13, as shown in FIG.
  • the second conducting path 12 is arranged closer to the load 91 than the semiconductor switch 13 is.
  • the semiconductor switch 13 is a semiconductor switching element that is controlled by an on signal and an off signal output from a drive circuit 42, which will be described later, and switches between an on state and an off state between the first conducting path 11 and the second conducting path 12. be.
  • the semiconductor switch 13 is an FET, more specifically, an N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) in this embodiment, but may be another semiconductor switching element such as an IGBT (Insulated Gate Bipolar Transistor). good.
  • the semiconductor switch 13 as shown in FIGS. , a second lead portion 32 , a third lead portion 33 , a fourth lead portion 34 and a conductor portion 35 .
  • the semiconductor switch 13 has a flat shape.
  • the thickness direction of the semiconductor switch 13 is the Z direction
  • the width direction is the Y direction
  • the direction crossing (more specifically, perpendicular to) the Z and Y directions is the X direction.
  • the semiconductor section 20 has a semiconductor material such as Si or SiC.
  • the semiconductor section 20 has a first semiconductor region (drain region in this embodiment) and a second semiconductor region (source region in this embodiment) arranged at a position different from the first semiconductor region.
  • the semiconductor portion 20 has a flat shape.
  • the thickness direction of the semiconductor section 20 is along the Z direction, and more specifically, is the same as the Z direction.
  • the first electrode 21, the second electrode 22 and the third electrode 23 are each configured as an electrode layer.
  • the thickness directions of the first electrode 21, the second electrode 22 and the third electrode 23 are along the Z direction, more specifically, the same as the Z direction.
  • the first electrode 21 is a drain electrode in this embodiment and is electrically connected to the first semiconductor region of the semiconductor section 20 .
  • the second electrode 22 is a source electrode in this embodiment and is electrically connected to the second semiconductor region of the semiconductor section 20 .
  • the third electrode 23 is a gate electrode in this embodiment, and receives an ON signal and an OFF signal from a drive circuit 42, which will be described later.
  • the first electrode 21 is arranged on one side of the semiconductor section 20 in the Z direction, and the second electrode 22 and the third electrode 23 are arranged on the other side of the semiconductor section 20 in the Z direction. That is, the semiconductor section 20 is arranged between the first electrode 21 and the second electrode 22 and the third electrode 23 .
  • the semiconductor switch 13 enters an ON state allowing current to flow from the first electrode 21 side to the second electrode 22 side, and an OFF signal is input to the third electrode 23 .
  • the switch is turned off, the current flow from the first electrode 21 side to the second electrode 22 side is cut off.
  • the encapsulant 24 covers the semiconductor section 20 , the first electrode 21 , the second electrode 22 and the third electrode 23 .
  • the encapsulant 24 has insulating properties.
  • the sealing body 24 is made of synthetic resin, for example.
  • the encapsulant 24 is molded by, for example, a transfer method.
  • the sealing body 24 has a flat shape.
  • the thickness direction of the encapsulant 24 is along the Z direction, more specifically, the same as the Z direction.
  • the encapsulant 24 has a first surface 24A and a second surface 24B.
  • the first surface 24A is a surface on one side of the sealing body 24 in the X direction.
  • the second surface 24B is a surface provided at a position different from the first surface 24A, and more specifically, it is a surface on one side of the sealing body 24 in the Z direction.
  • the sealing body 24 is formed with a first through hole 24C that penetrates the sealing body 24 in the Z direction (thickness direction).
  • the cross section of the first through hole 24C is circular.
  • a screw (not shown) can be inserted into the first through hole 24C, and the semiconductor switch 13 can be screwed.
  • the first lead portion 31, the second lead portion 32, the third lead portion 33, and the fourth lead portion 34 are each made of metal and have an elongated shape.
  • the first lead portion 31, the second lead portion 32, the third lead portion 33, and the fourth lead portion 34 protrude from the sealing body 24 to one side in the X direction.
  • the first lead portion 31, the second lead portion 32, the third lead portion 33, and the fourth lead portion 34 are arranged side by side along the Y direction. That is, the first lead portion 31 , the second lead portion 32 , the third lead portion 33 , and the fourth lead portion 34 are arranged side by side along the width direction of the semiconductor switch 13 .
  • the first lead portion 31 is a drain terminal in this embodiment.
  • the first lead portion 31 is electrically connected to the first electrode 21 and protrudes outside the sealing body 24 from the first surface 24A of the sealing body 24 .
  • the first lead portion 31 is electrically connected to the conductor portion 35 .
  • the first lead portion 31 and the conductor portion 35 are integrally formed of the same member.
  • the first lead portion 31 is electrically connected to the first electrode 21 via the conductor portion 35 .
  • the second lead portion 32 and the fourth lead portion 34 are source terminals in this embodiment.
  • the second lead portion 32 and the fourth lead portion 34 are electrically connected to the second electrode 22 via wires 36, respectively, and protrude from the first surface 24A of the sealing body 24 to the outside of the sealing body 24.
  • the second lead portion 32 and the fourth lead portion 34 are arranged between the first lead portion 31 and the third lead portion 33 in the Y direction.
  • the third lead portion 33 is a gate terminal in this embodiment.
  • the third lead portion 33 is electrically connected to the third electrode 23 via a wire 36 and protrudes outside the sealing body 24 from the first surface 24A of the sealing body 24 .
  • the conductor part 35 is made of metal and has a plate shape.
  • the thickness direction of the conductor portion 35 is along the Z direction, more specifically, the Z direction. That is, the thickness direction of the conductor part 35 is along the thickness direction of the sealing body 24 , and more specifically, is the same direction as the thickness direction of the sealing body 24 .
  • the conductor portion 35 is configured separately from the first electrode 21 and electrically connected to the first electrode 21 .
  • the surface of the conductor portion 35 on the other side in the Z direction is joined to the first electrode 21 .
  • bonding includes not only a configuration of series bonding, but also a configuration of bonding via another conductive layer.
  • the thickness direction of the conductor portion 35 is along the thickness direction of the first electrode 21 , more specifically, the same direction as the thickness direction of the first electrode 21 . That is, the conductor portion 35 and the first electrode 21 overlap each other.
  • the semiconductor section 20 and the first electrode 21 are arranged on the other side of the conductor section 35 in the Z direction.
  • the conductor portion 35 is exposed to the outside from the second surface 24B of the sealing body 24 .
  • the conductor portion 35 has an exposed surface 35A exposed to the outside of the sealing body 24 . 35 A of exposed surfaces are arrange
  • the conductor portion 35 functions as a radiator plate that releases heat generated in the semiconductor portion 20 to the outside of the sealing body 24 .
  • a second through hole 35B is formed in the conductor portion 35 so as to penetrate the conductor portion 35 in the Z direction (thickness direction).
  • the cross section of the second through hole 35B is circular.
  • the diameter of the second through-hole 35B is larger than the diameter of the first through-hole 24C of the sealing body 24 .
  • the inner peripheral surface of the second through hole 35B is arranged radially outside the inner peripheral surface of the first through hole 24C.
  • the circuit board 14 can control the semiconductor switch 13. As shown in FIGS. 1 and 5, the circuit board 14 includes a board 40, a control section 41, a drive circuit 42, a first voltage detection path 43, a second voltage detection path 44, and a voltage detection section 45. , has The substrate 40 is made of synthetic resin, for example, and has a plate shape. A wiring pattern is formed on the substrate 40 . The control section 41 , the drive circuit 42 , the first voltage detection path 43 , the second voltage detection path 44 and the voltage detection section 45 are mounted on the substrate 40 .
  • the control unit 41 is mainly composed of a microcomputer, for example, and has a CPU, RAM, ROM, and the like.
  • the control unit 41 gives a drive signal to the drive circuit 42 when the drive condition is satisfied.
  • the drive circuit 42 outputs an ON signal toward the third electrode 23 of the semiconductor switch 13 when the drive signal is given.
  • the ON signal is input to the third electrode 23, the semiconductor switch 13 is turned ON, and current flows from the first electrode 21 side to the second electrode 22 side. Thereby, power based on the power supply unit 90 is supplied to the load 91 .
  • the drive condition is not particularly limited, and may be, for example, that the start switch of the vehicle has been turned on, or that the user of the vehicle has performed a start operation.
  • the starting switch is an ignition switch in the case of an engine-equipped vehicle, and a power switch in the case of an electric vehicle.
  • the control unit 41 can recognize the on/off state of the start switch of the vehicle and the user's operation result based on a signal input from an external ECU (Electronic Control Unit), for example.
  • the control unit 41 gives a stop signal to the drive circuit 42 when the stop condition is satisfied.
  • the drive circuit 42 outputs an off signal toward the third electrode 23 of the semiconductor switch 13 when the stop signal is given.
  • the off signal is input to the third electrode 23, the semiconductor switch 13 is turned off, and current flow from the first electrode 21 side to the second electrode 22 side is interrupted. As a result, power supply from the power supply unit 90 to the load 91 is interrupted.
  • the stop condition is not particularly limited, and may be, for example, that the start switch of the vehicle has been turned off, or that the user of the vehicle has performed a stop operation.
  • the voltage detection unit 45 is configured with a known voltage detection circuit, for example, and detects the voltage between the first voltage detection path 43 and the second voltage detection path 44 .
  • the first voltage detection path 43 is electrically connected to the first electrode 21 and the second voltage detection path 44 is electrically connected to the second electrode 22 . Therefore, the voltage detection section 45 can detect the voltage between the first electrode 21 and the second electrode 22 .
  • the voltage detection unit 45 determines whether or not the voltage between the first electrode 21 and the second electrode 22 is equal to or lower than the threshold voltage. When the voltage detection unit 45 determines that the voltage between the first electrode 21 and the second electrode 22 is equal to or lower than the threshold voltage, the voltage detection unit 45 outputs a cutoff signal to the drive circuit 42 .
  • the drive circuit 42 When the cutoff signal is input, the drive circuit 42 outputs an off signal even when the drive signal is input. That is, when the voltage between the first electrode 21 and the second electrode 22 becomes equal to or lower than the threshold voltage, the off signal is input from the drive circuit 42 to the third electrode 23 . Thereby, the semiconductor switch 13 is turned off.
  • FIG. 5 As shown in FIG. 5, the first conducting path 11 and the second conducting path 12 are arranged on one side of the semiconductor switch 13 in the Z direction, and the circuit board 14 is arranged on the other side of the semiconductor switch 13 in the Z direction. are placed.
  • the first conductive path 11 includes a first busbar 11A.
  • the first bus bar 11A has a plate shape.
  • the second conductive path 12 includes a second busbar 12A.
  • the second bus bar 12A has a plate shape.
  • the thickness directions of the first bus bar 11A of the first conductive path 11, the second bus bar 12A of the second conductive path 12, and the circuit board 14 are along the thickness direction of the sealing body 24 of the semiconductor switch 13. Specifically, it is the same as the thickness direction of the sealing body 24 of the semiconductor switch 13 .
  • the first bus bar 11A has a first arrangement portion 11B arranged to extend along the Y direction.
  • the second busbar 12A has a second arrangement portion 12B arranged to extend along the Y direction.
  • the first arrangement portion 11B and the second arrangement portion 12B are arranged side by side with a space therebetween in the X direction.
  • the semiconductor switch 13 is arranged on the first placement portion 11B, and the exposed surface 35A of the conductor portion 35 is joined to the first placement portion 11B.
  • the width of the joint region between the exposed surface 35A and the first placement portion 11B is larger than the width of the first lead portion 31 .
  • the “joint region” refers to a region inside the outer edge of the portion where the conductor part 35 and the first conductive path 11 are joined, and the entire inner region may be joined, or the above-mentioned A portion of the inner region may not be joined.
  • a second placement portion 12B is placed on one side of the first placement portion 11B in the X direction.
  • the surface of the second lead portion 32 on one side in the Z direction is joined to the surface on the other side in the Z direction of the second placement portion 12B.
  • the first lead portion 31, the third lead portion 33, and the fourth lead portion 34 are bent and configured as follows.
  • the first lead portion 31 has a first extending portion 31B extending to the other side in the Z direction outside the sealing body 24 . More specifically, the first lead portion 31 has a first projecting portion 31A projecting from the sealing body 24 to one side in the X direction, and the first extending portion 31B is the tip of the first projecting portion 31A. to the other side in the Z direction.
  • the third lead portion 33 has a third extending portion 33B extending to the other side in the Z direction outside the sealing body 24 . More specifically, the third lead portion 33 has a third projecting portion 33A projecting from the sealing body 24 to one side in the X direction, and the third projecting portion 33B is the tip of the third projecting portion 33A. to the other side in the Z direction.
  • the fourth lead portion 34 has a fourth extending portion 34B extending to the other side in the Z direction outside the sealing body 24 . More specifically, the fourth lead portion 34 has a fourth projecting portion 34A projecting from the sealing body 24 to one side in the X direction, and the fourth projecting portion 34B is the tip of the fourth projecting portion 34A. to the other side in the Z direction.
  • the first extending portion 31B, the third extending portion 33B and the fourth extending portion 34B are each joined to the wiring pattern of the circuit board 14 by soldering or the like.
  • the first extension portion 31B is joined to the first voltage detection path 43 .
  • the fourth extension 34B is joined to the second voltage detection path 44.
  • the first voltage detection path 43 is electrically connected to the first electrode 21 via the first lead portion 31, and the second voltage detection path 44 is electrically connected to the second electrode 21 via the fourth lead portion 34. 22 is electrically connected.
  • An ON signal and an OFF signal are selectively input from the driving circuit 42 to the third extending portion 33B.
  • the vehicle-mounted semiconductor switch device 1 of the first embodiment has a semiconductor switch 13 and a voltage detection section 45 .
  • the semiconductor switch 13 is controlled by an on-signal and an off-signal output from the vehicle-mounted drive circuit 42 and switches between the on state and the off state between the first conducting path 11 and the second conducting path 12 .
  • the semiconductor switch 13 includes a semiconductor portion 20, a first electrode 21, a second electrode 22, a third electrode 23, a sealing body 24, a first lead portion 31, a second lead portion 32, and a conductor portion. 35 and .
  • An ON signal and an OFF signal are input from the driving circuit 42 to the third electrode 23 .
  • the encapsulant 24 covers the semiconductor section 20 .
  • the first lead portion 31 is electrically connected to the first electrode 21 and protrudes outside the sealing body 24 .
  • the second lead portion 32 is electrically connected to the second electrode 22 and protrudes outside the sealing body 24 .
  • the conductor portion 35 is electrically connected to the first electrode 21 and exposed to the outside of the sealing body 24 .
  • Voltage detector 45 detects the voltage applied to first voltage detection path 43 .
  • the conductor portion 35 functions as a current path, and the first lead portion 31 is used for voltage detection. . Therefore, it is easy to adopt a configuration in which the inductance component between the first electrode 21 and the first voltage detection path 43 is kept small. That is, according to this configuration, the voltage between the first electrode 21 and the second electrode 22 can be adjusted while suppressing the influence of the back electromotive force caused by the inductance component between the first electrode 21 and the first voltage detection path 43. Easy to configure for detection.
  • the first lead portion 31 and the conductor portion 35 electrically connected to the first electrode 21 are joined to the first voltage detection path 43 and the conductor portion 35 is connected to the first conductive path 11 . is joined to That is, since the first lead portion 31, which is easily bent, is joined to the first voltage detection path 43, the degree of freedom in the arrangement position of the first voltage detection path 43 can be increased.
  • the first lead portion 31 is configured to be electrically connected to the first electrode 21 via the conductor portion 35 .
  • the first lead portion 31 is joined to the first conductive path 11 and the first voltage detection path 43 is connected to the first electrode 21.
  • it is joined to the first lead portion 31 or the first conductive path 11 , it is affected by the back electromotive force caused by the inductance components of both the conductor portion 35 and the first lead portion 31 .
  • the first lead portion 31 is joined to the first voltage detection path 43 and the conductor portion 35 is joined to the first conductive path 11, so that the first conductive path 11 to the second conductive path 12 does not pass through the first lead portion 31, and as a result, the back electromotive force caused by the inductance component of the first lead portion 31 is not affected or is less likely to be affected. Therefore, the influence of the back electromotive force caused by the inductance component between the first electrode 21 and the first voltage detection path 43 can be suppressed more reliably.
  • first lead portion 31 and the conductor portion 35 are integrally formed. Therefore, the number of components can be reduced compared to the case where the first lead portion 31 and the conductor portion 35 are configured as separate components.
  • the conductor portion 35 is plate-shaped. One side of the conductor portion 35 in the thickness direction (one side in the Z direction) is joined to the first conductive path 11 .
  • the inductance component of the conductor portion 35 can be easily kept small, so that the inductance component between the first electrode 21 and the first voltage detection path 43 can be easily kept small.
  • the heat generated by the semiconductor switch 13 can be easily released from the conductor portion 35 to the first conductive path 11 .
  • the width W1 of the exposed surface 35A exposed to the outside of the sealing body 24 in the conductor portion 35 is larger than the width W2 of the first lead portion 31.
  • the voltage detection unit 45 outputs a cutoff signal when the voltage applied to the first voltage detection path 43 is a predetermined abnormal voltage, and the drive circuit 42, when the cutoff signal is input, Outputs an off signal.
  • the voltage is detected while suppressing the influence of the back electromotive force caused by the inductance component between the first electrode 21 and the first voltage detection path 43, and when the detected voltage is an abnormal voltage, An off signal can be output from the drive circuit 42 . Therefore, when an abnormality occurs in the voltage of the first electrode 21, the semiconductor switch 13 can be switched to the OFF state more quickly.
  • the conductor is separate from the first electrode in the above embodiment, the conductor and the first electrode may be integrally formed of the same member. That is, the conductor portion may be configured as part of the first electrode.

Abstract

An on-vehicle semiconductor switch device (1) comprises a semiconductor switch (13) that is controlled by an on-signal and an off-signal outputted from an on-vehicle drive circuit (42) and is switched to an on-state and an off-state between a first conduction path (11) and a second conduction path (12). The semiconductor switch (13) has a first lead (31) electrically connected to a first electrode (21) and a conductor (35) electrically connected to the first electrode (21). The conductor (35) is configured as a part of the first electrode (21) or is electrically connected to the first electrode (21), and the width of an exposed surface (35A) exposed outside a sealing body (24) is greater than the width of the first lead (31). The conductor (35) has the exposed surface (35A) joined to the first conduction path (11) and is electrically connected to the first conduction path (11).

Description

車載用の半導体スイッチ装置Automotive semiconductor switch device
　本開示は、車載用の半導体スイッチ装置に関する。 The present disclosure relates to a vehicle-mounted semiconductor switch device.
　特許文献１には、パック電池が開示されている。このパック電池は、電池と、電池に直列に接続された保護用のＦＥＴと、ＦＥＴのドレイン・ソース間の電圧を検出する電圧検出回路と、を備える。この電池パックは、電圧検出回路によって検出された電圧に基づいて過電流を検出し、ＦＥＴに流れる電流を遮断する。 Patent Document 1 discloses a battery pack. This battery pack includes a battery, a protective FET connected in series with the battery, and a voltage detection circuit that detects the voltage between the drain and source of the FET. This battery pack detects overcurrent based on the voltage detected by the voltage detection circuit and cuts off the current flowing through the FET.
特開２００４－３５７４４０号公報JP-A-2004-357440
　この種の技術では、半導体スイッチに電流が流れることで発熱し、故障などの問題が生じることが懸念される。 With this type of technology, there is concern that current flowing through the semiconductor switch will generate heat and cause problems such as failure.
　本開示は、半導体スイッチで生じた熱を外部に放出しやすい技術を提供する。 The present disclosure provides a technology that facilitates the release of heat generated by semiconductor switches to the outside.
　本開示の車載用の半導体スイッチ装置は、車載用の駆動回路から出力されるオン信号及びオフ信号によって制御され、第１導電路と第２導電路との間においてオン状態とオフ状態とに切り替わる半導体スイッチを有する車載用の半導体スイッチ装置であって、前記半導体スイッチは、半導体部と、第１電極と、第２電極と、前記駆動回路から前記オン信号及び前記オフ信号が入力される第３電極と、前記半導体部を覆う封止体と、前記第１電極に電気的に接続され、前記封止体の外部に突出する第１リード部と、前記第２電極に電気的に接続され、前記封止体の外部に突出する第２リード部と、前記第１電極の一部として構成され又は前記第１電極に電気的に接続され、前記封止体の外部に露出する露出面の幅が前記第１リード部の幅よりも大きい導体部と、を有し、前記半導体スイッチは、前記第３電極に前記オン信号が入力された場合に前記第１電極側から前記第２電極側への電流の流れを許容する前記オン状態となり、前記第３電極に前記オフ信号が入力された場合に前記第１電極側から前記第２電極側への電流の流れを遮断する前記オフ状態となり、前記導体部は、前記露出面が前記第１導電路に接合され、前記第１導電路に電気的に接続される。 A vehicle-mounted semiconductor switch device of the present disclosure is controlled by an on-signal and an off-signal output from a vehicle-mounted drive circuit, and switches between an on state and an off state between a first conducting path and a second conducting path. A vehicle-mounted semiconductor switch device having a semiconductor switch, wherein the semiconductor switch includes a semiconductor portion, a first electrode, a second electrode, and a third electrode to which the on signal and the off signal are input from the drive circuit. an electrode, a sealing body covering the semiconductor part, a first lead part electrically connected to the first electrode and protruding outside the sealing body, electrically connected to the second electrode, A width of a second lead portion protruding to the outside of the encapsulant, and an exposed surface formed as part of the first electrode or electrically connected to the first electrode and exposed to the outside of the encapsulant. is larger than the width of the first lead portion, and the semiconductor switch has a width from the first electrode side to the second electrode side when the ON signal is input to the third electrode. when the off signal is input to the third electrode, the off state is set to cut off the flow of current from the first electrode side to the second electrode side, The conductor portion is electrically connected to the first conductive path by joining the exposed surface to the first conductive path.
　本開示によれば、半導体スイッチで生じた熱を外部に放出しやすい。 According to the present disclosure, the heat generated by the semiconductor switch can be easily released to the outside.
図１は、車載用の半導体スイッチ装置の構成を概略的に示す回路図である。FIG. 1 is a circuit diagram schematically showing the configuration of a vehicle-mounted semiconductor switch device. 図２は、半導体スイッチの平面図である。FIG. 2 is a plan view of a semiconductor switch. 図３は、図２のＡ－Ａ線断面図である。3 is a cross-sectional view taken along the line AA of FIG. 2. FIG. 図４は、半導体スイッチの底面図である。FIG. 4 is a bottom view of the semiconductor switch. 図５は、車載用の半導体スイッチ装置の斜視図である。FIG. 5 is a perspective view of a vehicle-mounted semiconductor switch device.
［本開示の実施形態の説明］
　以下では、本開示の実施形態が列記されて例示される。 [Description of Embodiments of the Present Disclosure]
Embodiments of the present disclosure are listed and illustrated below.
　〔１〕本開示の車載用の半導体スイッチ装置は、車載用の駆動回路から出力されるオン信号及びオフ信号によって制御され、第１導電路と第２導電路との間においてオン状態とオフ状態とに切り替わる半導体スイッチを有する車載用の半導体スイッチ装置であって、前記半導体スイッチは、半導体部と、第１電極と、第２電極と、前記駆動回路から前記オン信号及び前記オフ信号が入力される第３電極と、前記半導体部を覆う封止体と、前記第１電極に電気的に接続され、前記封止体の外部に突出する第１リード部と、前記第２電極に電気的に接続され、前記封止体の外部に突出する第２リード部と、前記第１電極の一部として構成され又は前記第１電極に電気的に接続され、前記封止体の外部に露出する露出面の幅が前記第１リード部の幅よりも大きい導体部と、を有し、前記半導体スイッチは、前記第３電極に前記オン信号が入力された場合に前記第１電極側から前記第２電極側への電流の流れを許容する前記オン状態となり、前記第３電極に前記オフ信号が入力された場合に前記第１電極側から前記第２電極側への電流の流れを遮断する前記オフ状態となり、前記導体部は、前記露出面が前記第１導電路に接合され、前記第１導電路に電気的に接続される。 [1] A vehicle-mounted semiconductor switch device of the present disclosure is controlled by an on-signal and an off-signal output from a vehicle-mounted drive circuit, and an on state and an off state are established between a first conducting path and a second conducting path. The semiconductor switch device includes a semiconductor portion, a first electrode, a second electrode, and the ON signal and the OFF signal from the drive circuit. a sealing body covering the semiconductor part; a first lead part electrically connected to the first electrode and protruding outside the sealing body; a second lead portion that is connected and protrudes outside the encapsulant; and an exposure that is configured as part of the first electrode or is electrically connected to the first electrode and is exposed to the outside of the encapsulant. and a conductor portion having a surface width larger than the width of the first lead portion, and the semiconductor switch moves from the first electrode side to the second lead portion when the ON signal is input to the third electrode. The ON state permits current flow to the electrode side, and the OFF state cuts off current flow from the first electrode side to the second electrode side when the OFF signal is input to the third electrode. In this state, the exposed surface of the conductor portion is joined to the first conductive path and electrically connected to the first conductive path.
　この構成によれば、第１リード部よりも幅の大きい導体部が第１導電路に接合されるため、第１リード部を第１導電路に接合させる場合と比較して、導体部から第１導電路に効率良く熱を伝達させることができる。このため、この構成によれば、半導体スイッチで生じた熱を外部に放出しやすい。 According to this configuration, since the conductor portion having a width larger than that of the first lead portion is joined to the first conductive path, the distance from the conductor portion to the first conductive path is greater than in the case where the first lead portion is joined to the first conductive path. Heat can be efficiently transferred to one conduction path. Therefore, according to this configuration, the heat generated by the semiconductor switch can be easily released to the outside.
　〔２〕前記第１導電路は、バスバーを含み、前記導体部は、前記バスバーに接合されていてもよい。 [2] The first conductive path may include a busbar, and the conductor portion may be joined to the busbar.
　第１導電がバスバーを含む構成においては、半導体スイッチに大きな電流が流れて熱が発生しやすい。このため、この構成によれば、半導体スイッチで生じた熱を外部に放出しやすくなるメリットをより享受しやすい。 In a configuration in which the first conductor includes a bus bar, a large current flows through the semiconductor switch and heat is likely to be generated. Therefore, according to this configuration, the heat generated by the semiconductor switch can be easily released to the outside.
　〔３〕前記導体部は、板状をなしており、前記導体部の厚さ方向の片側の面が前記第１導電路に接合されていてもよい。 [3] The conductor may be plate-shaped, and one side of the conductor in the thickness direction may be joined to the first conductive path.
　この構成によれば、半導体部で生じた熱を、より効率的に第１導電路に伝達させ、より効率的に外部に放出させることができる。 According to this configuration, heat generated in the semiconductor section can be more efficiently transmitted to the first conductive path and more efficiently released to the outside.
　〔４〕前記車載用の半導体スイッチ装置は、前記第２電極に電気的に接続され、前記封止体の外部に突出する第４リード部と、電圧検出部が設けられた回路基板とを有していてもよい。前記導体部は、前記封止体における所定方向の一方側の面に配置されていてもよい。前記第１リード部において前記封止体の外部には、前記所定方向の他方側に延びる第１延出部が設けられていてもよい。前記第４リード部において前記封止体の外部には、前記所定方向の他方側に延びる第４延出部が設けられていてもよい。前記第１導電路は、前記封止体の前記所定方向の一方側に設けられていてもよい。前記回路基板は、前記封止体の前記所定方向の他方側において前記第１延出部及び前記第４延出部に接合されていてもよい。 [4] The vehicle-mounted semiconductor switch device has a fourth lead portion electrically connected to the second electrode and protruding outside the sealing body, and a circuit board provided with a voltage detection portion. You may have The conductor portion may be arranged on one side of the sealing body in a predetermined direction. A first extending portion extending in the other side in the predetermined direction may be provided outside the sealing body in the first lead portion. A fourth extending portion extending in the other side in the predetermined direction may be provided outside the sealing body in the fourth lead portion. The first conductive path may be provided on one side of the sealing body in the predetermined direction. The circuit board may be joined to the first extending portion and the fourth extending portion on the other side of the sealing body in the predetermined direction.
　この構成によれば、電圧検出部が設けられる回路基板を、第１導電路と第２導電路を結ぶ電流経路から離間させて配置させることができる。このため、回路基板に、電流経路で生じた熱の影響が及ぶことを抑制することができる。 According to this configuration, the circuit board on which the voltage detection section is provided can be arranged away from the current path connecting the first conductive path and the second conductive path. Therefore, it is possible to suppress the influence of the heat generated in the current path on the circuit board.
　〔５〕前記導体部において前記第１導電路に接合される接合領域の幅は、前記第１リード部の幅よりも大きくてもよい。 [5] The width of the joint region joined to the first conductive path in the conductor portion may be larger than the width of the first lead portion.
　この構成によれば、第１リード部を第１導電路に接合させる場合と比較して、より According to this configuration, compared to the case of joining the first lead portion to the first conductive path, the
　＜第１実施形態＞
　図１に示す車載用の半導体スイッチ装置１（以下、「半導体スイッチ装置１」とも称する）は、自動車などの車両に搭載される装置である。半導体スイッチ装置１は、第１導電路１１と、第２導電路１２と、半導体スイッチ１３と、回路基板１４と、を有する。 <First Embodiment>
A vehicle-mounted semiconductor switch device 1 (hereinafter also referred to as "semiconductor switch device 1") shown in FIG. 1 is a device mounted in a vehicle such as an automobile. The semiconductor switch device 1 has a first conductive path 11 , a second conductive path 12 , a semiconductor switch 13 and a circuit board 14 .
　第１導電路１１及び第２導電路１２は、車両に搭載される電源部９０と負荷９１との間に設けられ、電源部９０から負荷９１へ電力を供給する電力路の一部として機能する。第１導電路１１と第２導電路１２との間には、半導体スイッチ１３が設けられている。第１導電路１１は、図１に示すように、半導体スイッチ１３よりも電源部９０側に配置されている。第２導電路１２は、半導体スイッチ１３よりも負荷９１側に配置されている。 The first conducting path 11 and the second conducting path 12 are provided between a power supply unit 90 mounted on a vehicle and a load 91, and function as part of a power supply path that supplies power from the power supply unit 90 to the load 91. . A semiconductor switch 13 is provided between the first conductive path 11 and the second conductive path 12 . The first conductive path 11 is arranged closer to the power supply unit 90 than the semiconductor switch 13, as shown in FIG. The second conducting path 12 is arranged closer to the load 91 than the semiconductor switch 13 is.
　半導体スイッチ１３は、後述する駆動回路４２から出力されるオン信号及びオフ信号によって制御され、第１導電路１１と第２導電路１２との間においてオン状態とオフ状態とに切り替わる半導体スイッチング素子である。半導体スイッチ１３は、本実施形態ではＦＥＴ、より具体的にはＮチャネル型のＭＯＳＦＥＴ（Ｍｅｔａｌ　Ｏｘｉｄｅ　Ｓｅｍｉｃｏｎｄｕｃｔｏｒ　Ｆｉｅｌｄ　Ｅｆｆｅｃｔ　Ｔｒａｎｓｉｓｔｏｒ）とするが、ＩＧＢＴ（Ｉｎｓｕｌａｔｅｄ　Ｇａｔｅ　Ｂｉｐｏｌａｒ　Ｔｒａｎｓｉｓｔｏｒ）など別の半導体スイッチング素子であってもよい。 The semiconductor switch 13 is a semiconductor switching element that is controlled by an on signal and an off signal output from a drive circuit 42, which will be described later, and switches between an on state and an off state between the first conducting path 11 and the second conducting path 12. be. The semiconductor switch 13 is an FET, more specifically, an N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) in this embodiment, but may be another semiconductor switching element such as an IGBT (Insulated Gate Bipolar Transistor). good.
　半導体スイッチ１３は、図２から図４に示すように、半導体部２０と、第１電極２１と、第２電極２２と、第３電極２３と、封止体２４と、第１リード部３１と、第２リード部３２と、第３リード部３３と、第４リード部３４と、導体部３５とを有する。半導体スイッチ１３は、扁平な形状をなしている。本実施形態では、半導体スイッチ１３の厚さ方向をＺ方向とし、幅方向をＹ方向とし、Ｚ方向及びＹ方向に対して交差（より具体的には直交）する方向をＸ方向とする。 The semiconductor switch 13, as shown in FIGS. , a second lead portion 32 , a third lead portion 33 , a fourth lead portion 34 and a conductor portion 35 . The semiconductor switch 13 has a flat shape. In this embodiment, the thickness direction of the semiconductor switch 13 is the Z direction, the width direction is the Y direction, and the direction crossing (more specifically, perpendicular to) the Z and Y directions is the X direction.
　半導体部２０は、Ｓｉ、ＳｉＣなどの半導体材料を有してなる。半導体部２０は、第１半導体領域（本実施形態ではドレイン領域）と、第１半導体領域とは異なる位置に配置される第２半導体領域（本実施形態ではソース領域）と、を有する。半導体部２０は、扁平な形状をなしている。半導体部２０の厚さ方向は、Ｚ方向に沿っており、より具体的にはＺ方向と同じである。 The semiconductor section 20 has a semiconductor material such as Si or SiC. The semiconductor section 20 has a first semiconductor region (drain region in this embodiment) and a second semiconductor region (source region in this embodiment) arranged at a position different from the first semiconductor region. The semiconductor portion 20 has a flat shape. The thickness direction of the semiconductor section 20 is along the Z direction, and more specifically, is the same as the Z direction.
　第１電極２１、第２電極２２及び第３電極２３は、それぞれ電極層として構成されている。第１電極２１、第２電極２２及び第３電極２３の厚さ方向はＺ方向に沿っており、より具体的には、Ｚ方向と同じである。第１電極２１は、本実施形態ではドレイン電極であり、半導体部２０の第１半導体領域に電気的に接続されている。第２電極２２は、本実施形態ではソース電極であり、半導体部２０の第２半導体領域に電気的に接続されている。第３電極２３は、本実施形態ではゲート電極であり、後述する駆動回路４２からオン信号及びオフ信号が入力される。第１電極２１は、半導体部２０のＺ方向の一方側に配置され、第２電極２２及び第３電極２３は、半導体部２０のＺ方向の他方側に配置される。つまり、半導体部２０は、第１電極２１と、第２電極２２及び第３電極２３との間に配置される。半導体スイッチ１３は、第３電極２３にオン信号が入力された場合に第１電極２１側から第２電極２２側への電流の流れを許容するオン状態となり、第３電極２３にオフ信号が入力された場合に第１電極２１側から第２電極２２側への電流の流れを遮断するオフ状態となる。 The first electrode 21, the second electrode 22 and the third electrode 23 are each configured as an electrode layer. The thickness directions of the first electrode 21, the second electrode 22 and the third electrode 23 are along the Z direction, more specifically, the same as the Z direction. The first electrode 21 is a drain electrode in this embodiment and is electrically connected to the first semiconductor region of the semiconductor section 20 . The second electrode 22 is a source electrode in this embodiment and is electrically connected to the second semiconductor region of the semiconductor section 20 . The third electrode 23 is a gate electrode in this embodiment, and receives an ON signal and an OFF signal from a drive circuit 42, which will be described later. The first electrode 21 is arranged on one side of the semiconductor section 20 in the Z direction, and the second electrode 22 and the third electrode 23 are arranged on the other side of the semiconductor section 20 in the Z direction. That is, the semiconductor section 20 is arranged between the first electrode 21 and the second electrode 22 and the third electrode 23 . When an ON signal is input to the third electrode 23 , the semiconductor switch 13 enters an ON state allowing current to flow from the first electrode 21 side to the second electrode 22 side, and an OFF signal is input to the third electrode 23 . When the switch is turned off, the current flow from the first electrode 21 side to the second electrode 22 side is cut off.
　封止体２４は、半導体部２０、第１電極２１、第２電極２２及び第３電極２３を覆う。封止体２４は、絶縁性を有する。封止体２４は、例えば合成樹脂製である。封止体２４は、例えばトランスファー方式でモールド成形される。封止体２４は、扁平な形状をなしている。封止体２４の厚さ方向は、Ｚ方向に沿っており、より具体的にはＺ方向と同じである。封止体２４は、第１面２４Ａと、第２面２４Ｂとを有する。第１面２４Ａは、封止体２４のＸ方向の一方側の面である。第２面２４Ｂは、第１面２４Ａとは異なる位置に設けられた面であり、より具体的には封止体２４のＺ方向の一方側の面である。封止体２４には、封止体２４をＺ方向（厚さ方向）に貫通する第１貫通孔２４Ｃが形成されている。第１貫通孔２４Ｃの断面は円形をなしている。第１貫通孔２４Ｃには図示しないネジが挿通可能とされており、半導体スイッチ１３をネジ止めすることができる。 The encapsulant 24 covers the semiconductor section 20 , the first electrode 21 , the second electrode 22 and the third electrode 23 . The encapsulant 24 has insulating properties. The sealing body 24 is made of synthetic resin, for example. The encapsulant 24 is molded by, for example, a transfer method. The sealing body 24 has a flat shape. The thickness direction of the encapsulant 24 is along the Z direction, more specifically, the same as the Z direction. The encapsulant 24 has a first surface 24A and a second surface 24B. The first surface 24A is a surface on one side of the sealing body 24 in the X direction. The second surface 24B is a surface provided at a position different from the first surface 24A, and more specifically, it is a surface on one side of the sealing body 24 in the Z direction. The sealing body 24 is formed with a first through hole 24C that penetrates the sealing body 24 in the Z direction (thickness direction). The cross section of the first through hole 24C is circular. A screw (not shown) can be inserted into the first through hole 24C, and the semiconductor switch 13 can be screwed.
　第１リード部３１、第２リード部３２、第３リード部３３及び第４リード部３４は、それぞれ金属製であり、細長い形状をなしている。第１リード部３１、第２リード部３２、第３リード部３３、及び第４リード部３４は、封止体２４からＸ方向の一方側に突出した形態をなしている。第１リード部３１、第２リード部３２、第３リード部３３、及び第４リード部３４は、Ｙ方向に沿って並んで配置されている。つまり、第１リード部３１、第２リード部３２、第３リード部３３、及び第４リード部３４は、半導体スイッチ１３の幅方向に沿って並んで配置されている。 The first lead portion 31, the second lead portion 32, the third lead portion 33, and the fourth lead portion 34 are each made of metal and have an elongated shape. The first lead portion 31, the second lead portion 32, the third lead portion 33, and the fourth lead portion 34 protrude from the sealing body 24 to one side in the X direction. The first lead portion 31, the second lead portion 32, the third lead portion 33, and the fourth lead portion 34 are arranged side by side along the Y direction. That is, the first lead portion 31 , the second lead portion 32 , the third lead portion 33 , and the fourth lead portion 34 are arranged side by side along the width direction of the semiconductor switch 13 .
　第１リード部３１は、本実施形態ではドレイン端子である。第１リード部３１は、第１電極２１に電気的に接続され、封止体２４の第１面２４Ａから封止体２４の外部に突出している。第１リード部３１は、導体部３５に電気的に接続されている。第１リード部３１と導体部３５とは、同一部材で一体的に形成されている。第１リード部３１は、導体部３５を介して第１電極２１に電気的に接続されている。 The first lead portion 31 is a drain terminal in this embodiment. The first lead portion 31 is electrically connected to the first electrode 21 and protrudes outside the sealing body 24 from the first surface 24A of the sealing body 24 . The first lead portion 31 is electrically connected to the conductor portion 35 . The first lead portion 31 and the conductor portion 35 are integrally formed of the same member. The first lead portion 31 is electrically connected to the first electrode 21 via the conductor portion 35 .
　第２リード部３２及び第４リード部３４は、本実施形態ではソース端子である。第２リード部３２及び第４リード部３４は、それぞれワイヤ３６を介して第２電極２２に電気的に接続され、封止体２４の第１面２４Ａから封止体２４の外部に突出している。第２リード部３２及び第４リード部３４は、Ｙ方向において、第１リード部３１と第３リード部３３との間に配置されている。 The second lead portion 32 and the fourth lead portion 34 are source terminals in this embodiment. The second lead portion 32 and the fourth lead portion 34 are electrically connected to the second electrode 22 via wires 36, respectively, and protrude from the first surface 24A of the sealing body 24 to the outside of the sealing body 24. . The second lead portion 32 and the fourth lead portion 34 are arranged between the first lead portion 31 and the third lead portion 33 in the Y direction.
　第３リード部３３は、本実施形態ではゲート端子である。第３リード部３３は、ワイヤ３６を介して第３電極２３に電気的に接続され、封止体２４の第１面２４Ａから封止体２４の外部に突出している。 The third lead portion 33 is a gate terminal in this embodiment. The third lead portion 33 is electrically connected to the third electrode 23 via a wire 36 and protrudes outside the sealing body 24 from the first surface 24A of the sealing body 24 .
　導体部３５は、金属製であり、板状をなしている。導体部３５の厚さ方向は、Ｚ方向に沿っており、より具体的にはＺ方向である。つまり、導体部３５の厚さ方向は、封止体２４の厚さ方向に沿っており、より具体的には、封止体２４の厚さ方向と同じ方向である。導体部３５は、第１電極２１とは別体として構成されており、第１電極２１に電気的に接続されている。導体部３５のＺ方向の他方側の面は、第１電極２１に接合されている。なお、本明細書において、「接合」には、直列接合される構成だけでなく、他の導電層を介して接合される構成も含まれる。導体部３５の厚さ方向は、第１電極２１の厚さ方向に沿っており、より具体的には第１電極２１の厚さ方向と同じ方向である。つまり、導体部３５と第１電極２１は、重なっている。導体部３５のＺ方向の他方側に半導体部２０及び第１電極２１が配置されている。導体部３５は、封止体２４の第２面２４Ｂから外部に露出している。導体部３５は、封止体２４の外部に露出する露出面３５Ａを有する。露出面３５Ａは、Ｚ方向の一方側を向いた状態で配置されている。露出面３５Ａの幅Ｗ１は、第１リード部３１の幅Ｗ２よりも大きい。導体部３５は、半導体部２０で生じた熱を封止体２４の外部に放出する放熱板として機能する。導体部３５には、導体部３５をＺ方向（厚さ方向）に貫通する第２貫通孔３５Ｂが形成されている。第２貫通孔３５Ｂの断面は円形をなしている。第２貫通孔３５Ｂの直径は、封止体２４の第１貫通孔２４Ｃの直径よりも大きい。第２貫通孔３５Ｂの内周面は、第１貫通孔２４Ｃの内周面よりも径方向外側に配置されている。 The conductor part 35 is made of metal and has a plate shape. The thickness direction of the conductor portion 35 is along the Z direction, more specifically, the Z direction. That is, the thickness direction of the conductor part 35 is along the thickness direction of the sealing body 24 , and more specifically, is the same direction as the thickness direction of the sealing body 24 . The conductor portion 35 is configured separately from the first electrode 21 and electrically connected to the first electrode 21 . The surface of the conductor portion 35 on the other side in the Z direction is joined to the first electrode 21 . In this specification, the term “bonding” includes not only a configuration of series bonding, but also a configuration of bonding via another conductive layer. The thickness direction of the conductor portion 35 is along the thickness direction of the first electrode 21 , more specifically, the same direction as the thickness direction of the first electrode 21 . That is, the conductor portion 35 and the first electrode 21 overlap each other. The semiconductor section 20 and the first electrode 21 are arranged on the other side of the conductor section 35 in the Z direction. The conductor portion 35 is exposed to the outside from the second surface 24B of the sealing body 24 . The conductor portion 35 has an exposed surface 35A exposed to the outside of the sealing body 24 . 35 A of exposed surfaces are arrange|positioned in the state which faced the one side of the Z direction. Width W1 of exposed surface 35A is larger than width W2 of first lead portion 31 . The conductor portion 35 functions as a radiator plate that releases heat generated in the semiconductor portion 20 to the outside of the sealing body 24 . A second through hole 35B is formed in the conductor portion 35 so as to penetrate the conductor portion 35 in the Z direction (thickness direction). The cross section of the second through hole 35B is circular. The diameter of the second through-hole 35B is larger than the diameter of the first through-hole 24C of the sealing body 24 . The inner peripheral surface of the second through hole 35B is arranged radially outside the inner peripheral surface of the first through hole 24C.
　回路基板１４は、半導体スイッチ１３を制御しうる。回路基板１４は、図１及び図５に示すように、基板４０と、制御部４１と、駆動回路４２と、第１電圧検出経路４３と、第２電圧検出経路４４と、電圧検出部４５と、を有する。基板４０は、例えば合成樹脂製であり、板状をなしている。基板４０には、配線パターンが形成されている。制御部４１、駆動回路４２、第１電圧検出経路４３、第２電圧検出経路４４、及び電圧検出部４５は、基板４０上に搭載されている。 The circuit board 14 can control the semiconductor switch 13. As shown in FIGS. 1 and 5, the circuit board 14 includes a board 40, a control section 41, a drive circuit 42, a first voltage detection path 43, a second voltage detection path 44, and a voltage detection section 45. , has The substrate 40 is made of synthetic resin, for example, and has a plate shape. A wiring pattern is formed on the substrate 40 . The control section 41 , the drive circuit 42 , the first voltage detection path 43 , the second voltage detection path 44 and the voltage detection section 45 are mounted on the substrate 40 .
　制御部４１は、例えばマイクロコンピュータを主体として構成されており、ＣＰＵ、ＲＡＭ、ＲＯＭなどを有する。制御部４１は、駆動条件が成立した場合に、駆動回路４２に駆動信号を与える。駆動回路４２は、駆動信号が与えられた場合に、半導体スイッチ１３の第３電極２３に向けてオン信号を出力する。第３電極２３にオン信号が入力されると、半導体スイッチ１３がオン状態となり、第１電極２１側から第２電極２２側へ電流が流れる。これにより、電源部９０に基づく電力が、負荷９１に供給される。駆動条件は、特に限定されず、例えば車両の始動スイッチがオン状態に切り替わったことであってもよいし、車両のユーザによって開始操作が行われたことであってもよい。始動スイッチは、エンジン搭載車であればイグニッションスイッチであり、電気自動車であればパワースイッチである。制御部４１は、例えば外部のＥＣＵ（Ｅｌｅｃｔｒｏｎｉｃ　Ｃｏｎｔｒｏｌ　Ｕｎｉｔ）から入力される信号に基づいて、車両の始動スイッチのオンオフ状態やユーザの操作結果を認識することができる。 The control unit 41 is mainly composed of a microcomputer, for example, and has a CPU, RAM, ROM, and the like. The control unit 41 gives a drive signal to the drive circuit 42 when the drive condition is satisfied. The drive circuit 42 outputs an ON signal toward the third electrode 23 of the semiconductor switch 13 when the drive signal is given. When the ON signal is input to the third electrode 23, the semiconductor switch 13 is turned ON, and current flows from the first electrode 21 side to the second electrode 22 side. Thereby, power based on the power supply unit 90 is supplied to the load 91 . The drive condition is not particularly limited, and may be, for example, that the start switch of the vehicle has been turned on, or that the user of the vehicle has performed a start operation. The starting switch is an ignition switch in the case of an engine-equipped vehicle, and a power switch in the case of an electric vehicle. The control unit 41 can recognize the on/off state of the start switch of the vehicle and the user's operation result based on a signal input from an external ECU (Electronic Control Unit), for example.
　制御部４１は、停止条件が成立した場合に、駆動回路４２に停止信号を与える。駆動回路４２は、停止信号が与えられた場合に、半導体スイッチ１３の第３電極２３に向けてオフ信号を出力する。第３電極２３にオフ信号が入力されると、半導体スイッチ１３がオフ状態となり、第１電極２１側から第２電極２２側への電流の流れが遮断される。これにより、電源部９０から負荷９１への電力供給が遮断される。停止条件は、特に限定されず、例えば車両の始動スイッチがオフ状態に切り替わったことであってもよいし、車両のユーザによって停止操作が行われたことであってもよい。 The control unit 41 gives a stop signal to the drive circuit 42 when the stop condition is satisfied. The drive circuit 42 outputs an off signal toward the third electrode 23 of the semiconductor switch 13 when the stop signal is given. When the off signal is input to the third electrode 23, the semiconductor switch 13 is turned off, and current flow from the first electrode 21 side to the second electrode 22 side is interrupted. As a result, power supply from the power supply unit 90 to the load 91 is interrupted. The stop condition is not particularly limited, and may be, for example, that the start switch of the vehicle has been turned off, or that the user of the vehicle has performed a stop operation.
　電圧検出部４５は、例えば公知の電圧検出回路を有して構成されており、第１電圧検出経路４３と第２電圧検出経路４４との間の電圧を検出する。第１電圧検出経路４３は第１電極２１に電気的に接続され、第２電圧検出経路４４は第２電極２２に電気的に接続される。このため、電圧検出部４５は、第１電極２１と第２電極２２との間の電圧を検出しうる。電圧検出部４５は、第１電極２１と第２電極２２との間の電圧が閾値電圧以下であるか否かを判定する。電圧検出部４５は、第１電極２１と第２電極２２との間の電圧が閾値電圧以下であると判定した場合に、駆動回路４２に向けて遮断信号を出力する。駆動回路４２は、遮断信号が入力された場合、駆動信号が入力された状態であっても、オフ信号を出力する。つまり、第１電極２１と第２電極２２との間の電圧が閾値電圧以下となった場合、駆動回路４２から第３電極２３にオフ信号が入力される。これにより、半導体スイッチ１３は、オフ状態となる。 The voltage detection unit 45 is configured with a known voltage detection circuit, for example, and detects the voltage between the first voltage detection path 43 and the second voltage detection path 44 . The first voltage detection path 43 is electrically connected to the first electrode 21 and the second voltage detection path 44 is electrically connected to the second electrode 22 . Therefore, the voltage detection section 45 can detect the voltage between the first electrode 21 and the second electrode 22 . The voltage detection unit 45 determines whether or not the voltage between the first electrode 21 and the second electrode 22 is equal to or lower than the threshold voltage. When the voltage detection unit 45 determines that the voltage between the first electrode 21 and the second electrode 22 is equal to or lower than the threshold voltage, the voltage detection unit 45 outputs a cutoff signal to the drive circuit 42 . When the cutoff signal is input, the drive circuit 42 outputs an off signal even when the drive signal is input. That is, when the voltage between the first electrode 21 and the second electrode 22 becomes equal to or lower than the threshold voltage, the off signal is input from the drive circuit 42 to the third electrode 23 . Thereby, the semiconductor switch 13 is turned off.
　次の説明は、半導体スイッチ１３の接続構造に関する。
　図５に示すように、半導体スイッチ１３よりもＺ方向の一方側に第１導電路１１及び第２導電路１２が配置されており、半導体スイッチ１３よりもＺ方向の他方側に回路基板１４が配置されている。 The following description relates to the connection structure of the semiconductor switch 13. FIG.
As shown in FIG. 5, the first conducting path 11 and the second conducting path 12 are arranged on one side of the semiconductor switch 13 in the Z direction, and the circuit board 14 is arranged on the other side of the semiconductor switch 13 in the Z direction. are placed.
　第１導電路１１は、第１バスバー１１Ａを含む。第１バスバー１１Ａは、板状をなしている。第２導電路１２は、第２バスバー１２Ａを含む。第２バスバー１２Ａは、板状をなしている。第１導電路１１の第１バスバー１１Ａ、第２導電路１２の第２バスバー１２Ａ、及び回路基板１４の厚さ方向は、半導体スイッチ１３の封止体２４の厚さ方向に沿っており、より具体的には、半導体スイッチ１３の封止体２４の厚さ方向と同じである。 The first conductive path 11 includes a first busbar 11A. The first bus bar 11A has a plate shape. The second conductive path 12 includes a second busbar 12A. The second bus bar 12A has a plate shape. The thickness directions of the first bus bar 11A of the first conductive path 11, the second bus bar 12A of the second conductive path 12, and the circuit board 14 are along the thickness direction of the sealing body 24 of the semiconductor switch 13. Specifically, it is the same as the thickness direction of the sealing body 24 of the semiconductor switch 13 .
　第１バスバー１１Ａは、Ｙ方向に沿って延びるように配置される第１配置部１１Ｂを有する。第２バスバー１２Ａは、Ｙ方向に沿って延びるように配置される第２配置部１２Ｂを有する。第１配置部１１Ｂと第２配置部１２Ｂとは互いにＸ方向に間隔を空けて並んで配置されている。半導体スイッチ１３は、第１配置部１１Ｂ上に配置され、導体部３５の露出面３５Ａが第１配置部１１Ｂに接合されている。露出面３５Ａの第１配置部１１Ｂとの接合領域の幅は、第１リード部３１の幅よりも大きい。ここで「接合領域」とは、導体部３５と第１導電路１１とが接合される部分の外縁よりも内側の領域をいい、上記内側の領域の全体が接合されていてもよいし、上記内側の領域の一部が接合されていなくてもよい。 The first bus bar 11A has a first arrangement portion 11B arranged to extend along the Y direction. The second busbar 12A has a second arrangement portion 12B arranged to extend along the Y direction. The first arrangement portion 11B and the second arrangement portion 12B are arranged side by side with a space therebetween in the X direction. The semiconductor switch 13 is arranged on the first placement portion 11B, and the exposed surface 35A of the conductor portion 35 is joined to the first placement portion 11B. The width of the joint region between the exposed surface 35A and the first placement portion 11B is larger than the width of the first lead portion 31 . Here, the “joint region” refers to a region inside the outer edge of the portion where the conductor part 35 and the first conductive path 11 are joined, and the entire inner region may be joined, or the above-mentioned A portion of the inner region may not be joined.
　第１配置部１１ＢのＸ方向の一方側には第２配置部１２Ｂが配置されている。第２配置部１２ＢのＺ方向の他方側の面には、第２リード部３２のＺ方向の一方側の面が接合されている。 A second placement portion 12B is placed on one side of the first placement portion 11B in the X direction. The surface of the second lead portion 32 on one side in the Z direction is joined to the surface on the other side in the Z direction of the second placement portion 12B.
　第１リード部３１、第３リード部３３、第４リード部３４は、屈曲されて以下のように構成されている。 The first lead portion 31, the third lead portion 33, and the fourth lead portion 34 are bent and configured as follows.
　第１リード部３１は、封止体２４の外部においてＺ方向の他方側に延びる第１延出部３１Ｂを有する。より具体的には、第１リード部３１は、封止体２４からＸ方向の一方側に突出する第１突出部３１Ａを有し、第１延出部３１Ｂは、第１突出部３１Ａの先端からＺ方向の他方側に延びている。 The first lead portion 31 has a first extending portion 31B extending to the other side in the Z direction outside the sealing body 24 . More specifically, the first lead portion 31 has a first projecting portion 31A projecting from the sealing body 24 to one side in the X direction, and the first extending portion 31B is the tip of the first projecting portion 31A. to the other side in the Z direction.
　第３リード部３３は、封止体２４の外部においてＺ方向の他方側に延びる第３延出部３３Ｂを有する。より具体的には、第３リード部３３は、封止体２４からＸ方向の一方側に突出する第３突出部３３Ａを有し、第３延出部３３Ｂは、第３突出部３３Ａの先端からＺ方向の他方側に延びている。 The third lead portion 33 has a third extending portion 33B extending to the other side in the Z direction outside the sealing body 24 . More specifically, the third lead portion 33 has a third projecting portion 33A projecting from the sealing body 24 to one side in the X direction, and the third projecting portion 33B is the tip of the third projecting portion 33A. to the other side in the Z direction.
　第４リード部３４は、封止体２４の外部においてＺ方向の他方側に延びる第４延出部３４Ｂを有する。より具体的には、第４リード部３４は、封止体２４からＸ方向の一方側に突出する第４突出部３４Ａを有し、第４延出部３４Ｂは、第４突出部３４Ａの先端からＺ方向の他方側に延びている。 The fourth lead portion 34 has a fourth extending portion 34B extending to the other side in the Z direction outside the sealing body 24 . More specifically, the fourth lead portion 34 has a fourth projecting portion 34A projecting from the sealing body 24 to one side in the X direction, and the fourth projecting portion 34B is the tip of the fourth projecting portion 34A. to the other side in the Z direction.
　第１延出部３１Ｂ、第３延出部３３Ｂ及び第４延出部３４Ｂは、それぞれ回路基板１４の配線パターンに半田付けなどで接合されている。第１延出部３１Ｂは、第１電圧検出経路４３に接合されている。第４延出部３４Ｂは、第２電圧検出経路４４に接合されている。つまり、第１電圧検出経路４３は、第１リード部３１を介して第１電極２１に電気的に接続されており、第２電圧検出経路４４は、第４リード部３４を介して第２電極２２に電気的に接続されている。第３延出部３３Ｂには、駆動回路４２からオン信号及びオフ信号が選択的に入力される。 The first extending portion 31B, the third extending portion 33B and the fourth extending portion 34B are each joined to the wiring pattern of the circuit board 14 by soldering or the like. The first extension portion 31B is joined to the first voltage detection path 43 . The fourth extension 34B is joined to the second voltage detection path 44. As shown in FIG. That is, the first voltage detection path 43 is electrically connected to the first electrode 21 via the first lead portion 31, and the second voltage detection path 44 is electrically connected to the second electrode 21 via the fourth lead portion 34. 22 is electrically connected. An ON signal and an OFF signal are selectively input from the driving circuit 42 to the third extending portion 33B.
　次の説明は、第１実施形態の効果に関する。
　第１実施形態の車載用の半導体スイッチ装置１は、半導体スイッチ１３と、電圧検出部４５と、を有している。半導体スイッチ１３は、車載用の駆動回路４２から出力されるオン信号及びオフ信号によって制御され、第１導電路１１と第２導電路１２との間においてオン状態とオフ状態とに切り替わる。半導体スイッチ１３は、半導体部２０と、第１電極２１と、第２電極２２と、第３電極２３と、封止体２４と、第１リード部３１と、第２リード部３２と、導体部３５と、を有している。第３電極２３は、駆動回路４２からオン信号及びオフ信号が入力される。封止体２４は、半導体部２０を覆う。第１リード部３１は、第１電極２１に電気的に接続され、封止体２４の外部に突出している。第２リード部３２は、第２電極２２に電気的に接続され、封止体２４の外部に突出している。導体部３５は、第１電極２１に電気的に接続され、封止体２４の外部に露出している。半導体スイッチ１３は、第３電極２３にオン信号が入力された場合に第１電極２１側から第２電極２２側への電流の流れを許容するオン状態となり、第３電極２３にオフ信号が入力された場合に第１電極２１側から第２電極２２側への電流の流れを遮断するオフ状態となる。導体部３５は第１導電路１１に接合されており、第１リード部３１は第１電圧検出経路４３に接合されている。電圧検出部４５は、第１電圧検出経路４３に印加された電圧を検出する。この構成によれば、第１電極２１に電気的に接続される第１リード部３１及び導体部３５のうち、導体部３５が電流経路として機能し、第１リード部３１が電圧検出に用いられる。このため、第１電極２１と第１電圧検出経路４３との間のインダクタンス成分を小さく抑える構成をとりやすい。つまり、この構成によれば、第１電極２１と第１電圧検出経路４３との間のインダクタンス成分に起因する逆起電力の影響を抑えつつ、第１電極２１及び第２電極２２間の電圧を検出する構成をとりやすい。 The following description relates to the effects of the first embodiment.
The vehicle-mounted semiconductor switch device 1 of the first embodiment has a semiconductor switch 13 and a voltage detection section 45 . The semiconductor switch 13 is controlled by an on-signal and an off-signal output from the vehicle-mounted drive circuit 42 and switches between the on state and the off state between the first conducting path 11 and the second conducting path 12 . The semiconductor switch 13 includes a semiconductor portion 20, a first electrode 21, a second electrode 22, a third electrode 23, a sealing body 24, a first lead portion 31, a second lead portion 32, and a conductor portion. 35 and . An ON signal and an OFF signal are input from the driving circuit 42 to the third electrode 23 . The encapsulant 24 covers the semiconductor section 20 . The first lead portion 31 is electrically connected to the first electrode 21 and protrudes outside the sealing body 24 . The second lead portion 32 is electrically connected to the second electrode 22 and protrudes outside the sealing body 24 . The conductor portion 35 is electrically connected to the first electrode 21 and exposed to the outside of the sealing body 24 . When an ON signal is input to the third electrode 23 , the semiconductor switch 13 enters an ON state allowing current to flow from the first electrode 21 side to the second electrode 22 side, and an OFF signal is input to the third electrode 23 . When the switch is turned off, the current flow from the first electrode 21 side to the second electrode 22 side is cut off. The conductor portion 35 is joined to the first conductive path 11 and the first lead portion 31 is joined to the first voltage detection path 43 . Voltage detector 45 detects the voltage applied to first voltage detection path 43 . According to this configuration, of the first lead portion 31 and the conductor portion 35 electrically connected to the first electrode 21, the conductor portion 35 functions as a current path, and the first lead portion 31 is used for voltage detection. . Therefore, it is easy to adopt a configuration in which the inductance component between the first electrode 21 and the first voltage detection path 43 is kept small. That is, according to this configuration, the voltage between the first electrode 21 and the second electrode 22 can be adjusted while suppressing the influence of the back electromotive force caused by the inductance component between the first electrode 21 and the first voltage detection path 43. Easy to configure for detection.
　更に、第１電極２１に電気的に接続される第１リード部３１及び導体部３５のうち、第１リード部３１が第１電圧検出経路４３に接合され、導体部３５が第１導電路１１に接合されている。つまり、屈曲しやすい第１リード部３１を第１電圧検出経路４３に接合させる構成であるため、第１電圧検出経路４３の配置位置の自由度を高めることができる。 Further, of the first lead portion 31 and the conductor portion 35 electrically connected to the first electrode 21 , the first lead portion 31 is joined to the first voltage detection path 43 and the conductor portion 35 is connected to the first conductive path 11 . is joined to That is, since the first lead portion 31, which is easily bent, is joined to the first voltage detection path 43, the degree of freedom in the arrangement position of the first voltage detection path 43 can be increased.
　更に、第１リード部３１は、導体部３５を介して第１電極２１に電気的に接続される構成をなしている。第１リード部３１が導体部３５を介して第１電極２１に電気的に接続される構成では、第１リード部３１が第１導電路１１に接合され、且つ第１電圧検出経路４３が第１リード部３１又は第１導電路１１に接合される場合、導体部３５と第１リード部３１の両方のインダクタンス成分に起因する逆起電力の影響を受ける。これに対し、本構成では、第１リード部３１が第１電圧検出経路４３に接合され、導体部３５が第１導電路１１に接合されているため、第１導電路１１から第２導電路１２に流れる電流が第１リード部３１を通過しなくなり、その結果、第１リード部３１のインダクタンス成分に起因する逆起電力の影響を受けないか、あるいは受けにくい。このため、第１電極２１と第１電圧検出経路４３との間のインダクタンス成分に起因する逆起電力の影響をより確実に抑えることができる。 Furthermore, the first lead portion 31 is configured to be electrically connected to the first electrode 21 via the conductor portion 35 . In a configuration in which the first lead portion 31 is electrically connected to the first electrode 21 via the conductor portion 35, the first lead portion 31 is joined to the first conductive path 11 and the first voltage detection path 43 is connected to the first electrode 21. When it is joined to the first lead portion 31 or the first conductive path 11 , it is affected by the back electromotive force caused by the inductance components of both the conductor portion 35 and the first lead portion 31 . On the other hand, in this configuration, the first lead portion 31 is joined to the first voltage detection path 43 and the conductor portion 35 is joined to the first conductive path 11, so that the first conductive path 11 to the second conductive path 12 does not pass through the first lead portion 31, and as a result, the back electromotive force caused by the inductance component of the first lead portion 31 is not affected or is less likely to be affected. Therefore, the influence of the back electromotive force caused by the inductance component between the first electrode 21 and the first voltage detection path 43 can be suppressed more reliably.
　更に、第１リード部３１と導体部３５とは一体的に形成されている。このため、第１リード部３１と導体部３５とを別部品として構成する場合と比較して、部品点数を抑えることができる。 Furthermore, the first lead portion 31 and the conductor portion 35 are integrally formed. Therefore, the number of components can be reduced compared to the case where the first lead portion 31 and the conductor portion 35 are configured as separate components.
　更に、導体部３５は、板状をなしている。導体部３５の厚さ方向の片側（Ｚ方向の一方側）の面が第１導電路１１に接合されている。この構成によれば、導体部３５のインダクタンス成分を小さく抑えやすいため、第１電極２１と第１電圧検出経路４３との間のインダクタンス成分を小さく抑えやすい。また、この構成によれば、半導体スイッチ１３で生じた熱を導体部３５から第１導電路１１に放出しやすい。 Furthermore, the conductor portion 35 is plate-shaped. One side of the conductor portion 35 in the thickness direction (one side in the Z direction) is joined to the first conductive path 11 . With this configuration, the inductance component of the conductor portion 35 can be easily kept small, so that the inductance component between the first electrode 21 and the first voltage detection path 43 can be easily kept small. Moreover, according to this configuration, the heat generated by the semiconductor switch 13 can be easily released from the conductor portion 35 to the first conductive path 11 .
　更に、導体部３５において封止体２４の外部に露出する露出面３５Ａの幅Ｗ１は、第１リード部３１の幅Ｗ２よりも大きい。この構成によれば、導体部３５のインダクタンス成分を小さく抑えやすいため、第１電極２１と第１電圧検出経路４３との間のインダクタンス成分を小さく抑えやすい。また、この構成によれば、半導体スイッチ１３で生じた熱を導体部３５から第１導電路１１に放出しやすい。 Furthermore, the width W1 of the exposed surface 35A exposed to the outside of the sealing body 24 in the conductor portion 35 is larger than the width W2 of the first lead portion 31. With this configuration, the inductance component of the conductor portion 35 can be easily kept small, so that the inductance component between the first electrode 21 and the first voltage detection path 43 can be easily kept small. Moreover, according to this configuration, the heat generated by the semiconductor switch 13 can be easily released from the conductor portion 35 to the first conductive path 11 .
　更に、電圧検出部４５は、第１電圧検出経路４３に印加された電圧が予め定められた異常電圧である場合に遮断信号を出力し、駆動回路４２は、遮断信号が入力された場合に、オフ信号を出力する。この構成によれば、第１電極２１と第１電圧検出経路４３との間のインダクタンス成分に起因する逆起電力の影響を抑えつつ電圧を検出し、その検出した電圧が異常電圧である場合に駆動回路４２からオフ信号を出力することができる。このため、第１電極２１の電圧に異常が生じた場合に、半導体スイッチ１３をより迅速にオフ状態に切り替えることができる。 Further, the voltage detection unit 45 outputs a cutoff signal when the voltage applied to the first voltage detection path 43 is a predetermined abnormal voltage, and the drive circuit 42, when the cutoff signal is input, Outputs an off signal. According to this configuration, the voltage is detected while suppressing the influence of the back electromotive force caused by the inductance component between the first electrode 21 and the first voltage detection path 43, and when the detected voltage is an abnormal voltage, An off signal can be output from the drive circuit 42 . Therefore, when an abnormality occurs in the voltage of the first electrode 21, the semiconductor switch 13 can be switched to the OFF state more quickly.
　＜他の実施形態＞
　本開示は、上記記述及び図面によって説明した実施形態に限定されるものではない。例えば、上述又は後述の実施形態の特徴は、矛盾しない範囲であらゆる組み合わせが可能である。また、上述又は後述の実施形態のいずれの特徴も、必須のものとして明示されていなければ省略することもできる。更に、上述した実施形態は、次のように変更されてもよい。 <Other embodiments>
The present disclosure is not limited to the embodiments illustrated by the above description and drawings. For example, the features of the embodiments described above or below can be combined in any consistent manner. Also, any feature of the embodiments described above or below may be omitted if not explicitly indicated as essential. Furthermore, the embodiments described above may be modified as follows.
　上記実施形態では、導体部が第１電極とは別体であったが、導体部が第１電極と同一部材で一体的に構成されてもよい。つまり、導体部が第１電極の一部として構成されていてもよい。 Although the conductor is separate from the first electrode in the above embodiment, the conductor and the first electrode may be integrally formed of the same member. That is, the conductor portion may be configured as part of the first electrode.
　なお、今回開示された実施の形態は全ての点で例示であって制限的なものではないと考えられるべきである。本発明の範囲は、今回開示された実施の形態に限定されるものではなく、特許請求の範囲によって示された範囲内又は特許請求の範囲と均等の範囲内での全ての変更が含まれることが意図される。 It should be noted that the embodiments disclosed this time should be considered as examples in all respects and not restrictive. The scope of the present invention is not limited to the embodiments disclosed this time, and includes all modifications within the scope indicated by the claims or within the scope equivalent to the claims. is intended.
１…半導体スイッチ装置
１１…第１導電路
１１Ａ…第１バスバー
１１Ｂ…第１配置部
１２…第２導電路
１２Ａ…第２バスバー
１２Ｂ…第２配置部
１３…半導体スイッチ
１４…回路基板
２０…半導体部
２１…第１電極
２２…第２電極
２３…第３電極
２４…封止体
２４Ａ…第１面
２４Ｂ…第２面
２４Ｃ…第１貫通孔
３１…第１リード部
３１Ａ…第１突出部
３１Ｂ…第１延出部
３２…第２リード部
３３…第３リード部
３３Ａ…第３突出部
３３Ｂ…第３延出部
３４…第４リード部
３４Ａ…第４突出部
３４Ｂ…第４延出部
３５…導体部
３５Ａ…露出面
３５Ｂ…第２貫通孔
３６…ワイヤ
４０…基板
４１…制御部
４２…駆動回路
４３…第１電圧検出経路
４４…第２電圧検出経路
４５…電圧検出部
９０…電源部
９１…負荷
Ｗ１…露出面の幅
Ｗ２…第１リード部の幅 REFERENCE SIGNS LIST 1 semiconductor switch device 11 first conductive path 11A first bus bar 11B first placement portion 12 second conductive path 12A second bus bar 12B second placement portion 13 semiconductor switch 14 circuit board 20 semiconductor Part 21... First electrode 22... Second electrode 23... Third electrode 24... Sealing body 24A... First surface 24B... Second surface 24C... First through hole 31... First lead part 31A... First projecting part 31B 1st extension 32 2nd lead 33 3rd lead 33A 3rd extension 33B 3rd extension 34 4th lead 34A 4th extension 34B 4th extension 35 Conductor portion 35A Exposed surface 35B Second through hole 36 Wire 40 Substrate 41 Control section 42 Drive circuit 43 First voltage detection path 44 Second voltage detection path 45 Voltage detection section 90 Power supply Part 91... Load W1... Width of exposed surface W2... Width of first lead part

Claims (5)

  1. 　車載用の駆動回路から出力されるオン信号及びオフ信号によって制御され、第１導電路と第２導電路との間においてオン状態とオフ状態とに切り替わる半導体スイッチを有する車載用の半導体スイッチ装置であって、
    　前記半導体スイッチは、
    　半導体部と、
    　第１電極と、
    　第２電極と、
    　前記駆動回路から前記オン信号及び前記オフ信号が入力される第３電極と、
    　前記半導体部を覆う封止体と、
    　前記第１電極に電気的に接続され、前記封止体の外部に突出する第１リード部と、
    　前記第２電極に電気的に接続され、前記封止体の外部に突出する第２リード部と、
    　前記第１電極の一部として構成され又は前記第１電極に電気的に接続され、前記封止体の外部に露出する露出面の幅が前記第１リード部の幅よりも大きい導体部と、
    　を有し、
    　前記半導体スイッチは、前記第３電極に前記オン信号が入力された場合に前記第１電極側から前記第２電極側への電流の流れを許容する前記オン状態となり、前記第３電極に前記オフ信号が入力された場合に前記第１電極側から前記第２電極側への電流の流れを遮断する前記オフ状態となり、
    　前記導体部は、前記露出面が前記第１導電路に接合され、前記第１導電路に電気的に接続される
    　車載用の半導体スイッチ装置。     A vehicle-mounted semiconductor switch device having a semiconductor switch that is controlled by an on-signal and an off-signal output from a vehicle-mounted driving circuit and switches between an on state and an off state between a first conducting path and a second conducting path. There is
    The semiconductor switch is
    a semiconductor part;
    a first electrode;
    a second electrode;
    a third electrode to which the ON signal and the OFF signal are input from the drive circuit;
    a sealing body covering the semiconductor part;
    a first lead portion electrically connected to the first electrode and protruding outside the sealing body;
    a second lead portion electrically connected to the second electrode and protruding outside the sealing body;
    a conductor part configured as a part of the first electrode or electrically connected to the first electrode, the width of the exposed surface exposed to the outside of the sealing body being larger than the width of the first lead part;
    has
    The semiconductor switch enters the ON state allowing current to flow from the first electrode side to the second electrode side when the ON signal is input to the third electrode, and the semiconductor switch is turned OFF to the third electrode. When a signal is input, the off state is set to cut off current flow from the first electrode side to the second electrode side,
    A vehicle-mounted semiconductor switch device, wherein the exposed surface of the conductor portion is joined to the first conductive path and is electrically connected to the first conductive path.
  2. 　前記第１導電路は、バスバーを含み、
    　前記導体部は、前記バスバーに接合されている
    　請求項１に記載の車載用の半導体スイッチ装置。     the first conductive path includes a busbar;
    The vehicle-mounted semiconductor switch device according to claim 1, wherein the conductor portion is joined to the bus bar.
  3. 　前記導体部は、板状をなしており、
    　前記導体部の厚さ方向の片側の面が前記第１導電路に接合されている
    　請求項１又は請求項２に記載の車載用の半導体スイッチ装置。     The conductor portion has a plate shape,
    3. The vehicle-mounted semiconductor switch device according to claim 1, wherein one surface of the conductor portion in the thickness direction is joined to the first conductive path.
  4. 　前記第２電極に電気的に接続され、前記封止体の外部に突出する第４リード部と、
    　電圧検出部が設けられた回路基板と
    　を有し、
    　前記導体部は、前記封止体における所定方向の一方側の面に配置され、
    　前記第１リード部において前記封止体の外部には、前記所定方向の他方側に延びる第１延出部が設けられ、
    　前記第４リード部において前記封止体の外部には、前記所定方向の他方側に延びる第４延出部が設けられ、
    　前記第１導電路は、前記封止体の前記所定方向の一方側に設けられ、
    　前記回路基板は、前記封止体の前記所定方向の他方側において前記第１延出部及び前記第４延出部に接合されている
    　請求項１から請求項３のいずれか一項に記載の車載用の半導体スイッチ装置。     a fourth lead portion electrically connected to the second electrode and protruding outside the sealing body;
    and a circuit board provided with a voltage detection unit,
    The conductor portion is arranged on one side of the sealing body in a predetermined direction,
    A first extension portion extending in the other side of the predetermined direction is provided outside the sealing body in the first lead portion,
    A fourth extending portion extending in the other side of the predetermined direction is provided outside the sealing body in the fourth lead portion,
    The first conductive path is provided on one side of the sealing body in the predetermined direction,
    4. The circuit board according to any one of claims 1 to 3, wherein the circuit board is joined to the first extending portion and the fourth extending portion on the other side of the sealing body in the predetermined direction. Automotive semiconductor switch device.
  5. 　前記導体部において前記第１導電路に接合される接合領域の幅は、前記第１リード部の幅よりも大きい
    　請求項１から請求項４のいずれか一項に記載の車載用の半導体スイッチ装置。     5. The vehicle-mounted semiconductor switch device according to any one of claims 1 to 4, wherein a width of a joint region joined to the first conductive path in the conductor portion is larger than a width of the first lead portion. .
PCT/JP2021/031122 2021-08-25 2021-08-25 On-vehicle semiconductor switch device WO2023026389A1 (en)

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JP2008294384A (en) * 2007-04-27 2008-12-04 Renesas Technology Corp Semiconductor device
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WO2018198957A1 (en) * 2017-04-24 2018-11-01 ローム株式会社 Semiconductor device
WO2019131222A1 (en) * 2017-12-28 2019-07-04 株式会社オートネットワーク技術研究所 Electrical connection device
JP2019198171A (en) * 2018-05-09 2019-11-14 株式会社フジクラ Power supply device

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