WO2023024235A1

WO2023024235A1 - Microwave transition structure, waveguide and integrated circuit

Info

Publication number: WO2023024235A1
Application number: PCT/CN2021/125088
Authority: WO
Inventors: 黎维金; 朱伏生; 赖峥嵘; 汤璐璐; 李永军
Original assignee: 广东省新一代通信与网络创新研究院
Priority date: 2021-08-25
Filing date: 2021-10-20
Publication date: 2023-03-02
Also published as: CN113659298A

Abstract

Disclosed in the present invention are a microwave transition structure, a waveguide and an integrated circuit. The microwave transition structure comprises a dielectric substrate, a first fin-line transition layer and a second fin-line transition layer, wherein the first fin-line transition layer is arranged on a back side of the dielectric substrate, and has a first transition section; the second fin-line transition layer is arranged on a front side of the dielectric substrate, and has a second transition section; orthographic projections, on the dielectric substrate, of a gradient line of the first transition section and of a second transmission line of the second transition section intersect; the second fin-line transition layer is provided with a first through hole, through which a finish line of the second transition section passes; and orthographic projections, on the dielectric substrate, of a hole wall of the first through hole and the first fin-line transition layer do not coincide. By means of the technical solution of the present invention, a resonance frequency can avoid the frequency of output electromagnetic waves, thereby reducing the influence on the transition performance; and since the requirement for the precision of the first through hole is not very high, the machining difficulty of the first through hole is reduced, thereby reducing the manufacturing cost of the microwave transition structure.

Description

Microwave Transition Structures, Waveguides and Integrated Circuits

technical field

The invention relates to the technical field of microwave transmission, in particular to a microwave transition structure, a waveguide and an integrated circuit.

Background technique

With the rapid development of semiconductor technology, Hybrid Microwave Integrated Circuits (HMIC) and Monolithic Microwave Integrated Circuits (MMIC) have been widely used in the millimeter wave frequency band. In the existing millimeter wave integrated circuits, more microstrip However, among various millimeter-wave integrated systems, most of the waveguide structures with small loss and high power capacity are used. Therefore, it is necessary to complete the conversion of electromagnetic signals between different transmission media, that is, waveguide-microwave with conversion.

There are many types of waveguide-microstrip transitions. Currently, the common waveguide-microstrip transitions mainly include step-ridge waveguide transition, microstrip probe transition and ridge-fin line transition. These structures can be achieved within a certain range. Transition performance, but the step ridge waveguide transition processing is complicated, the loss is large, the microstrip probe transition structure has a waveguide exit direction parallel to the circuit, and the structure is not compact. Some system structures are not suitable for installing short-circuit pistons, and the debugging is complicated. Line transition, the structure is simple, the transition direction is consistent with the circuit, and it can achieve better transition performance in a wide frequency band. It is a waveguide-microstrip transition structure commonly used today.

Since the transition structure of the ridge fin line will have a resonant frequency in the transition frequency band, which will affect the transition performance, therefore, the transition structure of the ridge fin line on the market is usually loaded with metal islands and other measures, so that the metal island is located at the ridge of the transition section The metal position of the fin line is used to suppress the resonant frequency, but the gap between the metal island and the ridge fin line must be small enough, which requires sufficient processing accuracy, but this will undoubtedly increase the processing cost, thereby increasing the impact on the ridge. Manufacturing cost of the fin-line transition structure.

Contents of the invention

The main purpose of the present invention is to propose a microwave transition structure, a waveguide and an integrated circuit, aiming at solving the technical problem of high manufacturing cost of the ridge fin line transition structure.

In order to achieve the above object, the microwave transition structure proposed by the present invention is installed in the waveguide, and the microwave transition structure includes:

A dielectric substrate, the dielectric substrate has a first end, a second end, a third end and a fourth end, the direction from the first end to the second end is parallel to the microwave transmission direction, and the direction from the third end to the The direction of the fourth end is perpendicular to the microwave transmission direction;

The first fin-line transition layer, the first fin-line transition layer is arranged on the back surface of the dielectric substrate, the first fin-line transition layer has a first transition section, and the gradient line of the first transition section is along the extending from the third end to the fourth end in a direction from the first end to the second end;

The second fin line transition layer, the second fin line transition layer is arranged on the front surface of the dielectric substrate, the second fin line transition layer has a second transition section, the second transmission line of the second transition section is along the extending from the fourth end to the third end in the direction from the first end to the second end, and the orthographic projections of the first transition section and the second transition section on the dielectric substrate are in the The first end does not overlap, the gradient line of the first transition section intersects the orthographic projection of the second transmission line of the second transition section on the dielectric substrate, and the second fin line transition layer is provided with a first A through hole, the finish line of the second transition section passes through the first through hole, and the hole wall of the first through hole does not coincide with the orthographic projection of the first fin-line transition layer on the dielectric substrate , wherein the finish line is parallel to the direction from the third end to the fourth end.

Optionally, the second fin line transition layer also has a transmission section, the transmission section is connected to the second transition section, the transmission section is provided with a second through hole, and the second through hole is connected to the second transition section. The first through hole is connected, and the orthographic projection of the first fin line transition layer and the second fin line transition layer on the dielectric substrate overlaps to form a microstrip line, and the microstrip line ends at the end line is the starting point extending towards the second end.

Optionally, the gradient line of the first transition section includes a first transmission line and a cavity line, the first transmission line is arranged at the first end, the cavity line is connected to the transmission line, and the The intersection point of the cavity line and the transmission line coincides with the orthographic projection of the end line on the dielectric substrate, and the orthographic projection of the hole wall of the first through hole on the dielectric substrate coincides with the cavity line The orthographic projections on the medium substrate are arranged at intervals.

Optionally, the end point of the hole wall of the first through hole close to the fourth end is located on a side of the end line away from the second through hole.

Optionally, the first transmission line and the second transmission line comply with the following relationship:

0<z<L; or

Wherein, W(z) is the width of the first fin line transition layer or the second fin line transition layer, b is the width of the narrow side of the waveguide, w is the width of the microstrip line, and z is the width of the first fin line transition layer. A transmission line or the ordinate corresponding to the second transmission line, L is the length of the second transition section, and t is an index coefficient.

Optionally, the first end of the dielectric substrate is provided with a first through groove, and the first through groove penetrates from the back of the dielectric substrate to the front of the dielectric substrate.

Optionally, the groove wall of the first through groove coincides with the orthographic projection of the microstrip line on the end face of the first end of the dielectric substrate.

Optionally, the third end of the dielectric substrate is provided with a second through groove, the fourth end of the dielectric substrate is provided with a third through groove, and the second through groove penetrates through the first fin-line transition layer To the front side of the dielectric substrate, the third through groove penetrates from the back side of the dielectric substrate to the second fin-line transition layer.

In addition, the present invention also proposes a waveguide, which includes:

A microwave transition structure as mentioned in any of the above technical solutions;

The waveguide body is provided with a slot, and the dielectric substrate of the microwave transition structure is inserted into the slot.

In addition, the present invention also proposes an integrated circuit, which includes the microwave transition structure mentioned in any of the above technical solutions.

The technical solution of the present invention is that the second through-hole is provided on the second fin-line transition layer, and the hole wall of the first through-hole does not coincide with the orthographic projection of the first fin-line transition layer on the dielectric substrate. After the line transition layer and the second fin line transition layer are orthographically projected on the dielectric substrate, a resonant frequency will be generated in the area between the hole wall of the first through hole and the gradient line of the first transition section, and the resonant frequency can be avoided. Open the center frequency of the output electromagnetic wave to reduce the influence of the generated resonant frequency on the transition characteristics of the microwave transition structure, wherein the end line of the second transition section is parallel to the direction from the third end to the fourth end, and when the first pass is set When opening a hole, the first through hole is required to be located on the finish line; since the first through hole is opened, the precision requirement for the first through hole is not very high, so the processing difficulty of the first through hole is reduced, thereby reducing the microwave Manufacturing costs of transition structures.

Description of drawings

In order to more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the following will briefly introduce the drawings that need to be used in the description of the embodiments or the prior art. Obviously, the accompanying drawings in the following description are only These are some embodiments of the present invention. For those skilled in the art, other drawings can also be obtained according to the structures shown in these drawings without creative effort.

Fig. 1 is a structural schematic diagram of an embodiment of the waveguide of the present invention;

Fig. 2 is a structural schematic diagram of the microwave transition structure in Fig. 1;

Fig. 3 is the simulation curve of traditional pair of ridge fin line transition structure;

Fig. 4 is the simulation curve after the first through-groove is set on the traditional ridge fin line transition structure;

FIG. 5 is a simulation curve of the microwave transition structure in FIG. 2 .

Explanation of reference numbers:

标号label	名称 name	标号label		名称name
11	介质基板 Dielectric substrate	1111	第一端first end

111111	第一通槽 first slot	1212	第二端 second end
1313	第三端 third end	131131	第二通槽 Second slot
1414	第四端 fourth end	141141	第三通槽 third channel
22	第一鳍线过渡层first fin line transition layer	21twenty one	第一过渡段first transition
22twenty two	渐变线 gradient line	221221	第一传输线 first transmission line
222222	腔体线 cavity line	33	第二鳍线过渡层Second Fin Line Transition Layer
3131	第二过渡段 second transition	3232	第一通孔first via
3333	终点线 finish line	3434	传输段 transmission segment
341341	第二通孔Second via	3535	第二传输线 second transmission line
44	微带线 microstrip line	55	波导本体waveguide body

The realization of the purpose of the present invention, functional characteristics and advantages will be further described in conjunction with the embodiments and with reference to the accompanying drawings.

Detailed ways

The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.

It should be noted that if there is a directional indication (such as up, down, left, right, front, back...) in the embodiment of the present invention, the directional indication is only used to explain the position in a certain posture (as shown in the accompanying drawing). If the specific posture changes, the directional indication will also change accordingly.

In addition, if there are descriptions involving "first", "second" and so on in the embodiments of the present invention, the descriptions of "first", "second" and so on are only for descriptive purposes, and should not be interpreted as indicating or implying Its relative importance or implicitly indicates the number of technical features indicated. Thus, the features defined as "first" and "second" may explicitly or implicitly include at least one of these features. In addition, the technical solutions of the various embodiments can be combined with each other, but it must be based on the realization of those skilled in the art. When the combination of technical solutions is contradictory or cannot be realized, it should be considered that the combination of technical solutions does not exist , nor within the scope of protection required by the present invention.

The invention proposes a microwave transition structure, which is used to solve the technical problem of high manufacturing cost of the ridge-fin line transition structure.

As shown in Figure 2, for the convenience of description, the ends of the dielectric substrate 1 are respectively defined as the first end 11, the second end 12, the third end 13 and the fourth end 14, so that from the first end 11 to the second end The direction of 12 is parallel to the microwave transmission direction, and the direction from the third end 13 to the fourth end 14 is perpendicular to the microwave transmission direction.

As shown in FIG. 2 , in order to more clearly show the orthographic relationship between the first fin-line transition layer 2 and the second fin-line transition layer 3 on the dielectric substrate 1 , the first fin-line transition layer 2 and the second fin line transition layer The two fin-line transition layers 3 appear in the same plane. In FIG. 2 , plane A represents the back side of the dielectric substrate 1 , and plane B represents the front side of the dielectric substrate 1 .

In the embodiment of the present invention, as shown in Figure 1 and Figure 2, the microwave transition structure is installed in the waveguide, the microwave transition structure includes a dielectric substrate 1, a first fin-line transition layer 2 and a second fin-line transition layer 3, the first A fin line transition layer 2 is disposed on the back of the dielectric substrate 1, the first fin line transition layer 2 has a first transition section 21, and the gradient line 22 of the first transition section 21 is along the direction from the first end 11 to the second end 12 Extending from the third end 13 to the fourth end 14, the second fin line transition layer 3 is arranged on the front surface of the dielectric substrate 1, the second fin line transition layer 3 has a second transition section 31, and the second transmission line of the second transition section 31 35 extends from the fourth end 14 to the third end 13 along the direction from the first end 11 to the second end 12, and the orthographic projection of the first transition section 21 and the second transition section 31 on the dielectric substrate 1 is at the first end 11 do not overlap, the gradient line 22 of the first transition section 21 intersects the orthographic projection of the second transmission line 35 of the second transition section 31 on the dielectric substrate 1, and the second fin line transition layer 3 is provided with a first through hole 32. The finish line 33 of the second transition section 31 passes through the first through hole 32, and the hole wall of the first through hole 32 does not coincide with the orthographic projection of the first fin line transition layer 2 on the dielectric substrate 1, wherein the finish line 33 and the third The direction from the end 13 to the fourth end 14 is parallel.

In the technical solution of the present invention, the first fin-line transition layer 2 is arranged on the back side of the dielectric substrate 1, and the second fin-line transition layer 3 is arranged on the front side of the dielectric substrate 1. The first fin-line transition layer 2 has a first transition section 21, The gradient line 22 of the first transition section 21 extends from the third end 13 to the fourth end 14 along the direction from the first end 11 to the second end 12, the second fin line transition layer 3 has a second transition section 31, the second The second transmission line 35 of the transition section 31 extends from the fourth end 14 to the third end 13 along the direction from the first end 11 to the second end 12, and the first transition section 21 and the second transition section 31 on the dielectric substrate 1 The orthographic projections do not overlap at the first end 11, so that the gradient line 22 of the first transition section 21 intersects the orthographic projection of the second transmission line 35 of the second transition section 31 on the dielectric substrate 1, so as to form a microstrip line 4, so that The dielectric substrate 1, the first fin-line transition layer 2 and the first fin-line transition layer 2 form a ridge fin-line transition structure, so that electromagnetic waves can be converted and transmitted between the microstrip line 4 and the waveguide; because the second fin-line transition layer 3 is provided with a first through hole 32, the hole wall of the first through hole 32 does not coincide with the orthographic projection of the first fin line transition layer 2 on the dielectric substrate 1, therefore, when the first fin line transition layer 2 and the second fin line transition layer After the two-fin line transition layer 3 is projected onto the dielectric substrate 1, a resonant frequency will be generated in the area between the hole wall of the first through hole 32 and the gradient line 22 of the first transition section 21, and the resonant frequency can be avoided. Opening the center frequency of the output electromagnetic wave reduces the influence of the generated resonant frequency on the transition characteristics of the microwave transition structure, wherein the finish line 33 of the second transition section 31 is parallel to the direction from the third end 13 to the fourth end 14, and When the first through hole 32 is set, the first through hole 32 is required to be positioned on the finish line 33; since the first through hole 32 is not required to be very accurate when the first through hole 32 is offered, the first through hole 32 is therefore reduced. The processing difficulty of the through hole 32 reduces the manufacturing cost of the microwave transition structure.

It can be understood that, in this embodiment, the gradient line 22 of the first transition section 21 is the gradient contour line of the first transition section 21 , and the second transmission line 35 of the second transition section 31 is the gradient contour line of the second transition section 31 ; The first through hole 32 does not pass through the dielectric substrate 1, and the dielectric substrate 1 can be an RT/duriod5880 substrate with a thickness of 0.1 mm.

Optionally, in this embodiment, both the first fin-line transition layer 2 and the second fin-line transition layer 3 are metal copper layers.

In one embodiment, as shown in FIG. 2 , the second fin-line transition layer 3 also has a transmission section 34, the transmission section 34 is connected to the second transition section 31, the transmission section 34 is provided with a second through hole 341, the second The through hole 341 communicates with the first through hole 32, and the orthographic projections of the first fin line transition layer 2 and the second fin line transition layer 3 on the dielectric substrate 1 overlap to form a microstrip line 4, and the microstrip line 4 ends at the end line 33 The starting point extends toward the second end 12 , so as to adjust the width of the microstrip line 4 by adjusting the width of the second through hole 341 in the direction from the third end 13 to the fourth end 14 .

Optionally, in this embodiment, the microstrip line 4 is a 50Ω microstrip line 4, the second through hole 341 is a rectangular hole, and the second through hole 341 extends from the terminal line to the second end 12 of the dielectric substrate 1 .

In one embodiment, as shown in FIG. 2 , the gradient line 22 of the first transition section 21 includes a first transmission line 221 and a cavity line 222, the first transmission line 221 is arranged at the first end 11, and the cavity line 222 is in phase with the transmission line. connected, and the junction of the cavity line 222 and the transmission line coincides with the orthographic projection of the end line 33 on the dielectric substrate 1, and the orthographic projection of the hole wall of the first through hole 32 on the dielectric substrate 1 coincides with the cavity line 222 on the dielectric substrate. The orthographic projection on 1 is arranged at intervals, so that the width of the first through hole 32 in the direction from the third end 13 to the fourth end 14 is smaller than the width of the cavity line 222 in the direction from the third end 13 to the fourth end 14, and After the first fin-line transition layer 2 and the second fin-line transition layer 3 are orthographically projected on the dielectric substrate 1, the first through hole 32 is located at the intersection of the cavity line 222 and the finish line 33 of the finish line 33 away from the third One side of the end 13, so that the generated resonance frequency avoids the center frequency of the output electromagnetic wave, and further reduces the influence of the resonance frequency on the transition characteristics of the microwave transition structure.

In one embodiment, as shown in FIG. 2 , the end point of the wall of the first through hole 32 near the fourth end 14 is located on the side of the finish line 33 away from the second through hole 341 , so that the second through hole 341 is at The fourth end 14 has enough cavity, so that the resonant frequency avoids the central frequency of the output electromagnetic wave, further reducing the influence of the resonant frequency on the transition characteristics of the microwave transition structure.

Optionally, as shown in FIG. 2, in this embodiment, the first through hole 32 is a quarter circular hole, and the center of the first through hole 32 is located on the finish line 33. The first through hole 32 can also be The rectangular hole can also be a polygonal hole, and the shape of the first through hole 32 is not limited here; the outline shape of the cavity line 222 is a quarter circle, and the center of the cavity line 222 and the end line 33 are on the dielectric substrate 1. The orthographic projection coincides, and the contour shape of the cavity line 222 may also be a rectangular hole, and may also be a polygonal hole, and the contour shape of the cavity line 222 is not limited here.

In one embodiment, the first transmission line 221 and the second transmission line 35 comply with the following relationship:

0<z<L; or

Wherein, W(z) is the width of the first fin-line transition layer 2 or the second fin-line transition layer 3, b is the width of the narrow side of the waveguide, w is the width of the microstrip line 4, and z is the first transmission line 221 or the second transmission line 35 corresponds to the ordinate, L is the length of the second transition section 31, and t is an index coefficient.

In this embodiment, by designing the first transmission line 221 and the second transmission line 35 through the above relational formula, lower insertion loss and lower return loss can be achieved. Specifically, the first transmission line 221 and the second transmission line 35 can be designed using the Spline curve. The second transmission line 35 , the Spline curve is a smooth free curve whose bending degree is controlled by nodes, and it simulates the curvature of the curve by selecting different numbers and positions of nodes.

In this embodiment, the larger the length L of the second transition section 31 in the direction from the first end 11 to the second end 12 (that is, the length from the first end 11 to the terminal line), the larger the transmission coefficient and the lower the return loss. Small, but it will cause the size of the microwave transition structure to increase. In order to balance the emission coefficient, return loss and the size of the microwave transition structure, the length L of the second transition section 31 is 1.5 times the wavelength of the output electromagnetic wave.

Understandably, in this embodiment, W(z) is the width of the first fin-line transition layer 2 or the second fin-line transition layer 3 in the direction from the third end 13 to the fourth end 14, and z is the first transmission line The distance from any point on 221 or the second transmission line 35 to the first end 11 is the ordinate corresponding to the first transmission line 221 or the second transmission line 35, and t is an index coefficient, which can be set by the designer according to the actual situation.

In one embodiment, as shown in FIG. 2, the first end 11 of the dielectric substrate 1 is provided with a first through groove 111, and the first through groove 111 penetrates from the back of the dielectric substrate 1 to the front of the dielectric substrate 1 to improve the The continuity of the waveguide to the microstrip line 4 makes the impedance of the microwave transition structure change continuously from the first end 11 to the second end 12, improving the transition performance of the microwave transition structure.

In one embodiment, as shown in FIG. 2, the groove wall of the first through groove 111 coincides with the orthographic projection of the microstrip line 4 on the end face of the first end 11 of the dielectric substrate 1, so as to further improve the transmission from the waveguide to the microstrip. The continuity of the line 4 makes the impedance of the microwave transition structure change continuously from the first end 11 to the second end 12, and better improves the transition performance of the microwave transition structure.

Optionally, in this embodiment, the first through-slot 111 is a semi-cylindrical through-slot, and the first through-slot 111 may also be a rectangular through-slot, and the outline shape of the first through-slot 111 is not limited here.

In this embodiment, as shown in FIG. 2 , both the microstrip line 4 and the second slot 131 are located in the middle of the direction from the third end 13 to the fourth end 14 .

In one embodiment, as shown in FIG. 2 , the third end 13 of the dielectric substrate 1 is provided with a second through-slot 131 , the fourth end 14 of the dielectric substrate 1 is provided with a third through-slot 141 , and the second through-slot 131 is formed from The first fin-line transition layer 2 penetrates to the front of the dielectric substrate 1 , and the third through groove 141 penetrates from the back of the dielectric substrate 1 to the second fin-line transition layer 3 , which can save materials and reduce costs.

In this embodiment, as shown in FIG. 2 , there are multiple second through-slots 131 and third through-slots 141 , and the multiple second through-slots 131 and the multiple third through-slots 141 are arranged at intervals.

In this embodiment, a plurality of second through-slots 131 are evenly arranged, and a plurality of third through-slots 141 are evenly arranged.

Optionally, in this embodiment, the second through groove 131 and/or the third through groove 141 are semi-cylindrical grooves, or rectangular grooves, which are not limited here.

After simulating several improvement schemes, the results are as follows:

Fig. 3 is the simulation curve of the traditional ridge fin line transition structure, Fig. 4 is the simulation curve after the first through groove 111 is set on the traditional ridge fin line transition structure, Fig. 5 is the microwave transition in Fig. 2 of the embodiment of the present invention The simulation curve of the structure, in the figure, S (P1, P1) represents transmission loss, and S (P2, P1) represents return loss, as can be seen from the simulation results of Fig. 3, Fig. 4 and Fig. 5, the embodiment of the present invention The transmission performance of the microwave transition structure provided in Figure 2 has been significantly improved. It can be seen from the simulation curve in Figure 5 that when the frequency is in the range of 103.68-118.27GHz, the insertion loss is less than 0.1dB, the return loss is greater than 20dB, and the bandwidth The range is 14%. When the frequency is in the range of 100-156GHz, the bandwidth range is 56%, the insertion loss is less than 0.5dB, and the return loss is greater than 10dB. Therefore, the preferred solution of the embodiment of the present invention has low transmission loss and low return loss. The advantages of high loss and wide bandwidth range.

In addition, as shown in Figure 1 and Figure 2, the embodiment of the present invention also proposes a waveguide, the waveguide includes a waveguide body 5 and the microwave transition structure mentioned in any of the above-mentioned embodiments, the waveguide body 5 is provided with a slot, and the microwave The dielectric substrate 1 of the transition structure is inserted into the slot.

The waveguide proposed in the embodiment of the present invention includes a waveguide body 5 and a microwave transition structure. For the specific structure of the microwave transition structure, refer to the above-mentioned embodiments. Since the waveguide adopts all the technical solutions of all the above-mentioned embodiments, it has at least the technology of the above-mentioned embodiments. All beneficial effects of the program.

In addition, an embodiment of the present invention further provides an integrated circuit, which includes the microwave transition structure mentioned in any of the above embodiments.

The integrated circuit proposed in the embodiment of the present invention includes a microwave transition structure. For the specific structure of the microwave transition structure, refer to the above-mentioned embodiments. Since the integrated circuit adopts all the technical solutions of all the above-mentioned embodiments, it has at least all the technical solutions of the above-mentioned embodiments. all the beneficial effects.

Optionally, the integrated circuit may be a hybrid microwave integrated circuit (HMIC), or a monolithic microwave integrated circuit (MMIC), which is not limited here.

The above is only a preferred embodiment of the present invention, and does not limit the patent scope of the present invention. Under the inventive concept of the present invention, the equivalent structural transformation made by using the description of the present invention and the contents of the accompanying drawings, or direct/indirect use All other relevant technical fields are included in the patent protection scope of the present invention.

Claims

A kind of microwave transition structure, described microwave transition structure is installed in waveguide, it is characterized in that, described microwave transition structure comprises:

A dielectric substrate, the dielectric substrate has a first end, a second end, a third end and a fourth end, the direction from the first end to the second end is parallel to the microwave transmission direction, and the direction from the third end to the The direction of the fourth end is perpendicular to the microwave transmission direction;

The first fin-line transition layer, the first fin-line transition layer is arranged on the back surface of the dielectric substrate, the first fin-line transition layer has a first transition section, and the gradient line of the first transition section is along the extending from the third end to the fourth end in a direction from the first end to the second end;

The second fin line transition layer, the second fin line transition layer is arranged on the front surface of the dielectric substrate, the second fin line transition layer has a second transition section, the second transmission line of the second transition section is along the extending from the fourth end to the third end in the direction from the first end to the second end, and the orthographic projections of the first transition section and the second transition section on the dielectric substrate are in the The first end does not overlap, the gradient line of the first transition section intersects the orthographic projection of the second transmission line of the second transition section on the dielectric substrate, and the second fin line transition layer is provided with a first A through hole, the finish line of the second transition section passes through the first through hole, and the hole wall of the first through hole does not coincide with the orthographic projection of the first fin-line transition layer on the dielectric substrate , wherein the finish line is parallel to the direction from the third end to the fourth end.
The microwave transition structure according to claim 1, wherein the second fin-line transition layer further has a transmission section, the transmission section is connected to the second transition section, and the transmission section is provided with a second A through hole, the second through hole communicates with the first through hole, and the orthographic projection of the first fin line transition layer and the second fin line transition layer on the dielectric substrate overlaps to form a microstrip line , the microstrip line extends toward the second end starting from the finish line.
The microwave transition structure according to claim 2, wherein the gradient line of the first transition section comprises a first transmission line and a cavity line, the first transmission line is arranged at the first end, and the cavity The line is connected to the transmission line, and the junction point of the cavity line and the transmission line coincides with the orthographic projection of the end line on the dielectric substrate, and the hole wall of the first through hole is in the medium The orthographic projection on the substrate is spaced apart from the orthographic projection of the cavity line on the dielectric substrate.
The microwave transition structure according to claim 3, wherein the end point of the wall of the first through hole close to the fourth end is located on the side of the end line away from the second through hole.
The microwave transition structure according to claim 3, wherein the first transmission line and the second transmission line meet the following relationship:

or

Wherein, W(z) is the width of the first fin line transition layer or the second fin line transition layer, b is the width of the narrow side of the waveguide, w is the width of the microstrip line, and z is the width of the first fin line transition layer. A transmission line or the ordinate corresponding to the second transmission line, L is the length of the second transition section, and t is an index coefficient.
The microwave transition structure according to claim 2, wherein the first end of the dielectric substrate is provided with a first through groove, and the first through groove penetrates from the back of the dielectric substrate to the bottom of the dielectric substrate. front.
The microwave transition structure according to claim 6, wherein the groove wall of the first through groove coincides with the orthographic projection of the microstrip line on the end face of the first end of the dielectric substrate.
The microwave transition structure according to claim 1, wherein the third end of the dielectric substrate is provided with a second through groove, the fourth end of the dielectric substrate is provided with a third through groove, and the second through groove is The groove runs through the first fin-line transition layer to the front side of the dielectric substrate, and the third through groove penetrates from the back side of the dielectric substrate to the second fin-line transition layer.
A waveguide, characterized in that the waveguide comprises:

The microwave transition structure according to any one of claims 1-8;

The waveguide body is provided with a slot, and the dielectric substrate of the microwave transition structure is inserted into the slot.
An integrated circuit, characterized in that the integrated circuit comprises the microwave transition structure according to any one of claims 1-8.