WO2023020461A1

WO2023020461A1 - Semiconductor process apparatus

Info

Publication number: WO2023020461A1
Application number: PCT/CN2022/112685
Authority: WO
Inventors: 杨慧萍; 杨帅
Original assignee: 北京北方华创微电子装备有限公司
Priority date: 2021-08-17
Filing date: 2022-08-16
Publication date: 2023-02-23
Also published as: CN115896744A; TW202309336A

Abstract

Provided is a semiconductor process apparatus, comprising a first chamber (100), a second chamber (200), and a third chamber (300), wherein the first chamber (100) is connected to and in communication with the second chamber (200); the third chamber (300) is arranged around the second chamber (200), and a first cavity (A) is formed between the third chamber and the second chamber; the third chamber (300) is provided with a temperature-controlled fluid inlet (310) and a temperature-controlled fluid outlet (320); and the first cavity (A) is configured for the flow of a temperature-controlled fluid to adjust the temperature of the second chamber (200). The problem of the unsatisfactory thermal insulation effect of a semiconductor process apparatus caused by local cold spots in a chamber due to it being difficult to fully attach a strip heater to an exposed portion of the chamber is solved.

Description

Semiconductor Process Equipment

technical field

The present application relates to the technical field of semiconductor processing technology, in particular to a semiconductor processing equipment.

Background technique

The temperature control of semiconductor process equipment has a great influence on the processing technology of wafers waiting to be processed. In order to ensure the performance of process products, higher requirements are put forward for the temperature stability and heat preservation effect of the equipment. Taking the vertical heat treatment equipment as an example, since the bottom of the chamber is exposed to the external environment, it is easy to exchange heat with the external environment, resulting in cold spots in the exposed part of the chamber (the cold spot is the part with the lowest temperature in the process chamber), while Cold spots can adversely affect a variety of processes. For example: SiN deposition process in LPCVD (Low Pressure Chemical Vapor Deposition, low pressure chemical vapor deposition), by-products will adhere to the cold spot, resulting in product particles exceeding the standard; water vapor annealing (Anneal) process, water vapor in the chamber Condensation occurs on the exposed part of the chamber, which causes the pressure in the chamber to fluctuate, and even interact with other corrosive gases to cause corrosion.

In the related art, a strip heater is attached to the exposed part of the chamber, so as to realize the heat preservation effect by controlling the temperature of the exposed part of the chamber, thereby avoiding the adverse effect of the cold spot on the process of the semiconductor process equipment, but due to The shape of the exposed part of the chamber is irregular, and it is difficult for the strip heater to completely attach to the exposed part of the chamber, and the wrapping property is poor, resulting in an unsatisfactory thermal insulation effect on the exposed part of the chamber of the semiconductor process equipment.

Contents of the invention

The present application discloses a semiconductor process equipment to solve the problem in the related art that it is difficult to completely attach the strip heater to the exposed part of the chamber, resulting in local cold spots in the chamber, resulting in an unsatisfactory heat preservation effect.

In order to solve the above problems, the application adopts the following technical solutions:

The present application discloses a semiconductor process equipment, including a first chamber, a second chamber and a third chamber, wherein:

The first chamber and the second chamber are butted and connected; the third chamber is arranged around the second chamber, and a first cavity is formed between the two, and the third chamber is opened with A temperature control fluid inlet and a temperature control fluid outlet, the first cavity is used for the flow of the temperature control fluid to adjust the temperature of the second chamber.

The technical solution adopted in this application can achieve the following beneficial effects:

The semiconductor process equipment disclosed in the embodiment of the present application is modified by the semiconductor process equipment in the related art, so that the disclosed semiconductor process equipment includes a third chamber, the third chamber is arranged around the second chamber, and the gap between the two The first cavity is formed. At the same time, the third chamber is provided with a temperature control fluid inlet and a temperature control fluid outlet. The temperature control fluid enters the first cavity from the temperature control fluid inlet, and the temperature control fluid transfers its own heat to the second cavity. Then, the temperature control fluid flows out from the temperature control fluid outlet. During this process, the temperature control fluid in the first cavity can contact the second chamber, so that the heat of the temperature control fluid can be transferred to the second cavity. chamber, thereby avoiding cold spots in the second chamber. Compared with the exposed part of the chamber that uses a strip heater in the prior art, the temperature control fluid has no restriction on the shape of the second chamber, which can ensure good Excellent heat transfer effect, so as to be able to adjust the temperature of the second chamber, provide a good thermal insulation effect for the second chamber and its connection with the first chamber, avoid cold spots, thereby avoiding the processing technology of wafers waiting for workpieces The by-products of condensation appear in the process, and the temperature of the first chamber is guaranteed to meet the temperature requirements of the processing process of the wafer waiting to be processed, thereby ensuring the process effect of the semiconductor process equipment.

Description of drawings

In order to more clearly illustrate the technical solutions in the embodiments of the present application or the background technology, the following will briefly introduce the drawings that need to be used in the description of the embodiments or the background technology. Obviously, for those of ordinary skill in the art, Other drawings can also be obtained from these drawings without any creative effort.

FIG. 1 is a partial cross-sectional view of a semiconductor process equipment disclosed in an embodiment of the present application at a first angle;

FIG. 2 is a partial cross-sectional view of the semiconductor process equipment disclosed in the embodiment of the present application under a second angle.

Explanation of reference signs:

100-first chamber, 110-first flange, 120-pressure ring,

200-second chamber, 210-port, 220-second flange, 221-sealing ring,

300-third chamber, 310-temperature control fluid inlet, 320-temperature control fluid outlet,

400-fluid delivery device, 410-flow control module, 420-output pipe,

500-heater,

600-sealed door,

710-fluid heating device, 720-temperature sensor,

800-insulation layer,

900-pressure detection module, 910-pressure measurement pipeline,

A-first cavity,

B-gap,

C - Second cavity.

Detailed ways

In order to make the purpose, technical solution and advantages of the present application clearer, the technical solution of the present application will be clearly and completely described below in conjunction with specific embodiments of the present application and corresponding drawings. Apparently, the described embodiments are only some of the embodiments of this application, not all of them. Based on the embodiments in this application, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the scope of protection of this application.

The technical solutions disclosed in various embodiments of the present application will be described in detail below with reference to the accompanying drawings.

Please refer to FIG. 1 and FIG. 2 , the embodiment of the present application discloses a semiconductor process equipment, and the disclosed semiconductor process equipment includes a first chamber 100 , a second chamber 200 and a third chamber 300 .

Both the first chamber 100 and the second chamber 200 can provide a processing place for the processing of wafers waiting to be processed. Specifically, the first chamber 100 and the second chamber 200 are docked and communicated, and the wafers waiting to be processed can be located in the first chamber. In the accommodation space formed by the first chamber 100 and the second chamber 200, wherein the semiconductor process equipment includes a heater 500, the first chamber 100 is at least partially located in the heating space of the heater 500, so that the heater 500 can control the second A chamber 100 is heated, thereby ensuring that the first chamber 100 can form a temperature environment required for processing wafers to be processed.

At the same time, the third chamber 300 is arranged around the second chamber 200, and a first cavity A is formed between them. The third chamber 300 is provided with a temperature control fluid inlet 310 and a temperature control fluid outlet 320, wherein the temperature control Both the fluid inlet 310 and the temperature control fluid outlet 320 are in communication with the first cavity A, and the first cavity A is used for the flow of the temperature control fluid to adjust the temperature of the second chamber 200, specifically, the temperature control fluid passes through the temperature control fluid The inlet 310 enters the first cavity A, and the temperature control fluid can transfer heat to the second chamber 200, so that the temperature of the inner space of the second chamber 200 rises, and then, the temperature control fluid that has transferred the heat from the control Warm fluid outlet 320 flows out. The above structure enables the temperature control fluid to flow in the first cavity A, thereby preventing the temperature control fluid from accumulating in the first cavity A after transferring heat, thereby preventing the cooled temperature control fluid from absorbing heat from the second chamber 200 , thereby ensuring that the second chamber 200 is less likely to have cold spots, thereby ensuring that the second chamber 200 can also form a temperature environment required for the processing process of the wafer waiting for the workpiece.

During the working process of the semiconductor processing equipment, the wafer waiting to be processed is located in the accommodation space formed by the first chamber 100 and the second chamber 200. Since the first chamber 100 is at least partially located in the heating space of the heater 500, the heater 500 heats the first chamber 100, and the heat is transferred to the inner space of the first chamber 100 through the inner wall of the first chamber 100, so as to ensure that the first chamber 100 can form the temperature required for the processing process of the wafer waiting to be processed. At the same time, the temperature control fluid enters the first cavity A through the temperature control fluid inlet 310, and the temperature control fluid transfers heat to the second chamber 200, so that the second chamber 200 also forms a processing technology for wafers waiting to be processed. The required temperature environment, therefore, the accommodation space is made up of the interior space of the first chamber 100 and the interior space of the second chamber 200, so that the accommodation space can form the ambient temperature required for the processing technology of the wafer waiting for the workpiece, Moreover, the first chamber 100 is at least partially located in the heating space, the second chamber 200 is surrounded by the third chamber 300 , and the temperature control fluid will fully contact the second chamber 200 without being affected by the second chamber 200 The restriction of the external shape makes it difficult for the first chamber 100 and the second chamber 200 to form heat exchange with the external environment, and thus makes it difficult for the first chamber 100 and the second chamber 200 to have cold spots.

The semiconductor process equipment disclosed in the embodiment of the present application is modified by the semiconductor process equipment in the related art, so that the disclosed semiconductor process equipment includes a third chamber 300, and the third chamber 300 is arranged around the second chamber 200, and the two The first cavity A is formed between them. At the same time, the third chamber 300 is provided with a temperature control fluid inlet 310 and a temperature control fluid outlet 320. The temperature control fluid enters the first cavity A from the temperature control fluid inlet 310, and the temperature control fluid Transfer its own heat to the second chamber 200, and then, the temperature control fluid flows out from the temperature control fluid outlet 320, during this process, the temperature control fluid in the first cavity A can contact the second chamber 200 , so that the heat of the temperature control fluid can be transferred to the second chamber 200, thereby avoiding cold spots in the second chamber 200. The warm fluid has no restriction on the shape of the second chamber 200, which can ensure a good heat transfer effect, so that the temperature of the second chamber 200 can be adjusted, and the connection between the second chamber 200 and the first chamber 100 can be provided. Good heat preservation effect, avoiding cold spots, thereby avoiding condensation by-products in the processing technology of wafers waiting for workpieces, and ensuring that the temperature of the first chamber 100 can meet the temperature requirements of the processing technology of wafers waiting for workpieces, thereby ensuring semiconductor Process effect of process equipment.

In the embodiment of the present application, the semiconductor process equipment may further include a hermetic door 600. Specifically, the end of the second chamber 200 away from the first chamber 100 may be provided with a port 210, wherein the port 210 may be connected to the second chamber 200. The interior of the chamber is connected, and the airtight door 600 can be arranged on the second chamber 200 to open and close the port 210. When the airtight door 600 and the port 210 are in an open state, the wafer waiting to be processed can pass through the port 210 and be placed in the accommodation space ; When the airtight door 600 and the port 210 are in the closed state, the airtight door 600 can prevent the heat of the second chamber 200 from dissipating, thereby ensuring that the temperature in the second chamber 200 meets the temperature requirements of the processing technology of the wafer waiting for the workpiece .

The third chamber 300 can be provided with an avoidance hole, and the airtight door 600 can be located in the space surrounded by the edge of the avoidance hole when the port is closed, and the semiconductor process equipment can also include a driving mechanism, and the driving mechanism can be connected with the airtight door 600 to drive The mechanism can drive the airtight door 600 close to or away from the second chamber 200, thereby realizing the automatic opening and closing of the second chamber 200 of the airtight door 600, and the airtight door 600 can also carry wafers waiting to be processed, so that the wafers waiting to be processed can enter Accommodate space.

In the embodiment of the present application, in order to facilitate the adjustment of the flow rate of the temperature control fluid, in an optional solution, the semiconductor process equipment may also include a fluid delivery device 400, specifically, the fluid delivery device 400 may include a flow control module 410 And the output pipe 420, the flow control module 410 can be a manual valve, a solenoid valve, a flow control valve, etc., which is not limited in this application. The flow control module 410 can be arranged on the output pipe 420, one end of the output pipe 420 can be connected to the temperature control fluid inlet 310, and the other end of the output pipe 420 can be used to connect with the temperature control fluid supply source (for providing temperature control fluid) , the flow control module 410 can control the open state and closed state of the output pipe 420 , so that the flow control module 410 can indirectly control whether the temperature control fluid can flow into the first cavity A.

During the use of the fluid delivery device 400, due to the different ambient temperatures required for the processing technology of different wafers to be processed, the semiconductor process equipment needs to adjust the temperature to adapt to the processing technology of the wafers to be processed. Specifically, the flow control module The group 410 adjusts the flow rate of the temperature control fluid into the first cavity A. Under different amounts of the temperature control fluid in the first cavity A, the staff detects the temperature change of the second chamber 200, so that the improvement of the second cavity can be determined. The temperature uniformity of the gas flow in the chamber 200 can further adapt to the processing technology of different wafers to be processed.

In a further technical solution, the semiconductor processing equipment can also include a fluid heating device 710, specifically, the fluid heating device 710 can be connected with the fluid delivery device 400, and the fluid heating device 710 can be used to adjust the temperature of the temperature control fluid, wherein the fluid The heating device 710 heats the temperature control fluid, and then the fluid heating device 710 transfers the heated temperature control fluid to the fluid delivery device 400, so that before the temperature control fluid enters the first cavity A, the temperature of the temperature control fluid can satisfy requirements of the second chamber 200 .

In the embodiment of the present application, in order to realize that the semiconductor process equipment can more accurately regulate the temperature in the containing space, in an optional solution, the semiconductor process equipment may further include a temperature sensor 720 and a first controller, specifically, A gap B can be formed between the airtight door 600 and the inner wall of the avoidance hole, and the temperature sensor 720 is arranged on the end face where the port 210 is located, and is located in the gap B. The temperature sensor 720 is used to detect the actual temperature of the second chamber 200, so that there is It is beneficial for staff to observe and record.

In a specific detection process, the temperature sensor 720 is used to detect the actual temperature of the end surface where the port 210 is located, that is, the actual temperature at the gap B. Since the gap B is exposed, the actual temperature at the gap B is the lowest temperature of the second chamber 200 . Therefore, it is ensured that the minimum temperature of the second chamber 200 is higher than the condensation temperature of the by-products in the processing process of the wafer waiting to be processed. In addition, installing the temperature sensor 720 in the gap B can make full use of the assembly gap of the semiconductor process equipment, which is beneficial to a more compact structure and facilitates disassembly and assembly of the temperature sensor 720 during maintenance.

At the same time, the temperature sensor can send the actual temperature to the first controller; the first controller can be used to adjust and control the temperature of the temperature control fluid, specifically, the first controller can be electrically connected with the fluid heating device 710, and when the actual temperature deviates from In the case of a preset temperature, the first controller controls the fluid heating device 710 to increase or decrease the temperature of the temperature control fluid, wherein the preset temperature is the temperature required by the processing technology of the wafer waiting for the workpiece, if the temperature sensor 720 detects When the actual temperature is lower than the temperature required by the processing technology of the wafer waiting to be processed, the first controller controls the fluid heating device 710 to increase the temperature of the temperature control fluid before entering the first cavity A; on the contrary, if the actual temperature detected by the temperature sensor 720 When the temperature is higher than the temperature required by the processing process of the wafer waiting to be processed, the first controller controls the fluid heating device 710 to reduce the temperature of the temperature control fluid before entering the first cavity A.

In the embodiment of the present application, the semiconductor process equipment may further include a pressure detection module 900 and a second controller. Specifically, the pressure detection module 900 may be arranged on the pressure measurement pipeline 910, and one end of the pressure measurement pipeline 910 may be connected to the second controller. A cavity A is connected, and the temperature control fluid will flow to the pressure measurement pipeline 910 , so as to facilitate detection by the pressure detection module 900 . The pressure detection module 900 can be used to detect the actual pressure of the first cavity A, and the second controller is electrically connected to the flow control module 410, wherein the semiconductor process equipment needs to set a preset pressure in advance, and the preset pressure can be the first A maximum safe pressure of the cavity A, when the actual pressure is greater than the preset pressure, the second controller controls the flow control module 410 to close or controls the flow control module 410 to reduce the flow of the temperature control fluid, thereby avoiding The actual pressure is too high, so that the processing of the wafers waiting to be processed is affected, thereby avoiding the scrapping of the wafers waiting to be processed.

During the working process of the semiconductor process equipment, the semiconductor process equipment uses the pressure detection module 900 to detect the actual pressure in the first cavity A. When the connection between the first chamber 100 and the second chamber 200 becomes loose, the pressure The detector 920 can detect the change of the actual pressure in the first cavity A, and when the actual pressure is greater than the preset pressure, the second controller controls the flow control module 410 to close. Of course, if there is a slight leak in the first chamber 100 and the actual pressure is lower than the preset pressure, the process can still be continued, so as not to cause scrapping of wafers waiting to be processed. It should be noted that the gas leaked into the second chamber 200 will also be discharged along with the temperature-controlled airflow, which will not affect other devices or cause safety accidents.

In the embodiment of the present application, in order to improve the firmness of the connection between the first chamber 100 and the second chamber 200, in an optional solution, the first chamber 100 may be provided with a first flange 110, and the second The chamber 200 can be provided with a second flange 220, specifically, the first flange 110 and the second flange 220 can be fixedly connected, wherein the first flange 110 and the second flange 220 can be bonded, welded, etc. way to achieve a fixed connection. In an optional manner, the first flange 110 may be provided with a plurality of first through holes, the second flange 220 may be provided with a plurality of second through holes, and the plurality of first through holes may be connected with the plurality of first through holes. The two through holes are in one-to-one correspondence, and the first flange 110 may also include a plurality of screws and a plurality of nuts, and the plurality of screws pass through the plurality of first through holes and the plurality of second through holes in one-to-one correspondence, and the plurality of screws pass through the plurality of first through holes and the plurality of second through holes. It is matched with multiple nuts one by one. The above structure can improve the firmness of the connection between the first chamber 100 and the second chamber 200 .

In the embodiment of the present application, the diameter of the first flange 110 may be smaller than the diameter of the second flange 220, specifically, the edge portion of the second flange 220 protrudes relative to the outer peripheral surface of the first flange 110, and the first The chamber 100 may further include a pressure ring 120, the pressure ring 120 abuts against the edge portion of the second flange 220, the pressure ring 120 is also provided with a first accommodation groove, the third chamber 300 may be located in the first accommodation groove, and A second cavity C is formed between the outer peripheral surface of the second flange 220, and the second cavity C communicates with the first cavity A; the pressure ring 120 can also be provided with a second receiving groove, and the first flange 110 is at least partially Located in the second receiving groove, so as to avoid interference between the pressure ring 120 and other parts of the semiconductor process equipment, at the same time, the pressure ring 120 can also provide protection for the first flange 110, and the gravity of the pressure ring 120 can support the first flange. 110 provides a pressing force, thereby improving the sealing performance of the connection between the first chamber 100 and the second chamber 200 .

Wherein, one end of the third chamber 300 can be connected to the inner wall of the first containing tank, and the third chamber 300, the second flange 220 and the first containing tank can form a second cavity C, so that the temperature control fluid can The heat is directly transferred to the connection position between the first chamber 100 and the second chamber 200, thereby further avoiding cold spots at the connection between the first chamber 100 and the second chamber 200, thereby further improving the semiconductor process The technological effect of the equipment.

In a further technical solution, a third receiving groove may be provided on the second flange 220, specifically, a sealing ring 221 may be provided in the third receiving groove, and the sealing ring 221 may be elastically clamped on the first flange 110. and the second flange 220 , and the sealing ring 221 is in sealing fit with the first flange 110 . The above structure can improve the sealing performance of the connection between the first chamber 100 and the second chamber 200 , so as to avoid gas leakage when the first chamber 100 and the second chamber 200 are processing wafers to be processed.

In a further technical solution, the temperature control fluid inlet 310 can communicate with the second cavity C, and the temperature control fluid outlet 320 can communicate with the first cavity A, specifically, the temperature control fluid inlet 310 and the temperature control fluid outlet 320 are respectively Located on opposite sides of the second chamber 200, so that the flow path of the temperature control fluid in the first cavity A is lengthened, and then the heat can be fully conducted in the first cavity A and the second cavity C, thereby In this way, the second chamber 200 , the first flange 110 and the second flange 220 can all obtain heat preservation effect.

In the embodiment of the present application, the semiconductor process equipment may further include a heat insulating layer 800. Specifically, the heat insulating layer 800 may be attached to the inner wall of the third chamber 300. The heat insulating layer 800 has the performance of non-heat conduction, which can ensure The heat of the temperature control fluid is only transferred to the second chamber 200, but not to the inner wall of the third chamber 300. On the one hand, it can reduce the external temperature of the third chamber 300, and on the other hand, it can prevent the temperature control fluid from heat loss, thereby improving the heat preservation effect of the second chamber 200 .

The above-mentioned embodiments of this application focus on the differences between the various embodiments. As long as the different optimization features of the various embodiments are not contradictory, they can be combined to form a better embodiment. Considering the simplicity of the text, here No longer.

The above descriptions are only examples of the present application, and are not intended to limit the present application. For those skilled in the art, various modifications and changes may occur in this application. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included within the scope of the claims of the present application.

Claims

A semiconductor process equipment, characterized by comprising a first chamber, a second chamber and a third chamber, wherein:

The first chamber and the second chamber are butted and connected; the third chamber is arranged around the second chamber, and a first cavity is formed between the two, and the third chamber is opened with A temperature control fluid inlet and a temperature control fluid outlet, the first cavity is used for the flow of the temperature control fluid to adjust the temperature of the second chamber.
The semiconductor process equipment according to claim 1, wherein the semiconductor process equipment further comprises a fluid delivery device, the fluid delivery device includes a flow control module and an output pipe, and the flow control module is arranged on the On the output pipe, one end of the output pipe is connected to the temperature control fluid inlet, and the other end of the output pipe is used to connect with the temperature control fluid supply source.
The semiconductor process equipment according to claim 2, wherein the semiconductor process equipment further comprises a fluid heating device, the fluid heating device is connected to the fluid delivery device, and the fluid heating device is used to adjust the control temperature of warm fluid.
The semiconductor process equipment according to claim 3, wherein the semiconductor process equipment further comprises a temperature sensor and a first controller;

The temperature sensor is used to detect the actual temperature of the second chamber, and send the actual temperature to the first controller;

The first controller is electrically connected to the fluid heating device, and when the actual temperature deviates from a preset temperature, the first controller controls the fluid heating device to increase or decrease the temperature of the temperature control fluid .
The semiconductor process equipment according to claim 2, wherein the semiconductor process equipment further comprises a pressure measuring pipeline, a pressure detection module and a second controller, wherein one end of the pressure measuring pipeline is connected to the first The cavity is connected; the pressure detection module is arranged on the pressure measurement pipeline;

The pressure detection module is used to detect the actual pressure of the first cavity through the pressure measuring pipeline, and send the actual pressure to the second controller;

The second controller is electrically connected to the flow control module, and when the actual pressure is greater than the preset pressure, the second controller controls the flow control module to close or controls the flow control module to set to reduce the flow rate of the temperature control fluid.
The semiconductor process equipment according to claim 4, wherein the semiconductor process equipment further comprises a hermetic door, and a port is opened at the end of the second chamber away from the first chamber, and the port is connected to the The interior of the second chamber is connected, the airtight door is arranged on the second chamber to open and close the port, the third chamber is provided with an avoidance hole, and the airtight door is used to close the port Located in the avoidance hole;

A gap is formed between the airtight door and the inner wall of the avoidance hole, and the temperature sensor is arranged on the end surface where the port is located, and is located in the gap.
The semiconductor process equipment according to claim 1, wherein the first chamber is provided with a first flange, the second chamber is provided with a second flange, and the first flange and the The second flange is fixedly connected.
The semiconductor process equipment according to claim 7, wherein the edge portion of the second flange protrudes relative to the outer peripheral surface of the first flange, and the first chamber further includes a pressure ring, so The pressure ring abuts against the edge portion of the second flange, the pressure ring is provided with a first accommodation groove, the third chamber is located in the first accommodation groove, and is connected to the second flange A second cavity is formed between the outer peripheral surfaces of the second cavity, and the second cavity communicates with the first cavity; the pressure ring is also provided with a second receiving groove, and the first flange is at least partially located on the first cavity. Two storage slots.
The semiconductor process equipment according to claim 8, wherein the temperature control fluid inlet communicates with the second cavity, the temperature control fluid outlet communicates with the first cavity, and the temperature control fluid The inlet and the outlet of the temperature control fluid are respectively located on opposite sides of the second chamber.
The semiconductor process equipment according to any one of claims 1-9, characterized in that the semiconductor process equipment further comprises a heat insulation layer, and the heat insulation layer is attached on the inner wall of the third chamber.