WO2023015438A1 - Puce de réseau à commande de phase optique et radar laser - Google Patents

Puce de réseau à commande de phase optique et radar laser Download PDF

Info

Publication number
WO2023015438A1
WO2023015438A1 PCT/CN2021/111753 CN2021111753W WO2023015438A1 WO 2023015438 A1 WO2023015438 A1 WO 2023015438A1 CN 2021111753 W CN2021111753 W CN 2021111753W WO 2023015438 A1 WO2023015438 A1 WO 2023015438A1
Authority
WO
WIPO (PCT)
Prior art keywords
waveguide
interlayer
waveguide layer
phased array
layer
Prior art date
Application number
PCT/CN2021/111753
Other languages
English (en)
Chinese (zh)
Inventor
汪敬
Original Assignee
深圳市速腾聚创科技有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 深圳市速腾聚创科技有限公司 filed Critical 深圳市速腾聚创科技有限公司
Priority to CN202180007949.2A priority Critical patent/CN114945836B/zh
Priority to PCT/CN2021/111753 priority patent/WO2023015438A1/fr
Publication of WO2023015438A1 publication Critical patent/WO2023015438A1/fr

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
    • G01S7/481—Constructional features, e.g. arrangements of optical elements
    • G01S7/4814—Constructional features, e.g. arrangements of optical elements of transmitters alone
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
    • G01S7/483—Details of pulse systems
    • G01S7/484—Transmitters
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
    • G01S7/491—Details of non-pulse systems
    • G01S7/4911—Transmitters
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/12004—Combinations of two or more optical elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/12007—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12133—Functions
    • G02B2006/12147—Coupler

Definitions

  • the present application relates to the technical field of laser radar, in particular to an optical phased array chip and laser radar.
  • the optical phased array chip is an important part of the all-solid-state lidar system, which has the advantages of complete solid-state, high reliability, small size, and convenient control.
  • devices such as couplers, phase shifters, and transmitting antennas are installed on the optical phased array chip, and the devices are connected through waveguides.
  • the waveguide material used in optical phased array chips generally adopts one of silicon-on-insulator (SOI) materials, silicon nitride materials, III-V materials, and the like.
  • One of the objectives of the embodiments of the present application is to provide an optical phased array chip and a laser radar.
  • an optical phased array chip including a substrate layer, a buried oxide layer, a first waveguide layer, an oxide layer, a second waveguide layer, and an upper cladding layer arranged in sequence; wherein, the second waveguide layer has a thermo-optic coefficient lower than the thermo-optic coefficient of the first waveguide layer;
  • a coupler, an optical splitter, and a transmitting antenna assembly are formed on the second waveguide layer; a phase shifter assembly is formed on the first waveguide layer; a two interlayer converter assemblies; wherein the coupler is in signal communication with the optical splitter through the second waveguide layer, and the optical splitter is in signal communication with the phase shifter assembly through one of the interlayer converter assemblies signal communication, and the phase shifter component is in signal communication with the transmitting antenna component through another interlayer converter component.
  • the second waveguide layer is divided into a first part and a second part arranged at intervals, the coupler and the optical splitter are formed on the first part, and the transmitting antenna assembly is formed on the On to the second part.
  • the first waveguide layer is located between the first part and the second part, and one end of the first waveguide layer is connected to the first waveguide layer through one of the interlayer converter components. Respective ends of one part are in signal communication, and the other end of said first waveguide layer is in signal communication with corresponding ends of said second part through another said interlayer converter assembly.
  • both ends of the first waveguide layer are stacked with corresponding ends of the two parts in the second waveguide layer.
  • the optical splitter has multiple signal output terminals
  • the phase shifter assembly includes a plurality of phase shifters communicated with a plurality of signal output ends of the optical splitter in one-to-one correspondence;
  • the transmitting antenna assembly includes a plurality of transmitting antennas in one-to-one communication with the plurality of phase shifters.
  • the signal output end of the first part has a plurality of first waveguide segments corresponding one-to-one to the plurality of signal output ends of the optical splitter;
  • the second part includes a plurality of second waveguide sections arranged in sequence, and the plurality of second waveguide sections are set in one-to-one correspondence with the plurality of first waveguide sections; each of the second waveguide sections is provided with a said transmit antenna;
  • the first waveguide layer includes a plurality of third waveguide sections arranged in sequence, and the plurality of third waveguide sections are set in one-to-one correspondence with the plurality of first waveguide sections; each of the third waveguide sections is provided with a said phase shifter;
  • One of the interlayer converter assemblies includes a plurality of first interlayer converters disposed between the plurality of third waveguide segments and the plurality of first waveguide segments in one-to-one correspondence;
  • Another interlayer converter assembly includes a plurality of second interlayer converters disposed between the plurality of third waveguide segments and the plurality of first waveguide segments in one-to-one correspondence.
  • the optical signals in the two waveguide layers in the same interlayer converter can pass through Evanescent wave coupling realizes interlayer conversion.
  • the first waveguide segment and the third waveguide segment are located in the first interlayer converter, and the second waveguide segment and the third waveguide segment are located in the first Parts inside the two interlayer converters are all tapered; both the first interlayer converter and the second interlayer converter are tapered waveguide mode converters.
  • the first waveguide segment and the third waveguide segment are located on the first layer
  • a grating structure is formed on the part inside the interlayer converter, and the part where the second waveguide section and the third waveguide section are located in the second interlayer converter; Optical signals in oppositely arranged waveguide sections can realize interlayer conversion through the grating structure.
  • the grating structure is fan-shaped.
  • the light emitting angle or the light receiving angle of the grating structure is 0-90°.
  • the light emitting angle or the light receiving angle of the grating structure is 0-60°.
  • the first waveguide layer is a silicon waveguide layer
  • the second waveguide layer is a silicon nitride waveguide layer
  • a laser radar including a laser radar transmitting system, a receiving system, and a signal processing system.
  • the laser radar transmitting system includes a laser and the above-mentioned optical phased array chip.
  • an automatic driving device including the above-mentioned laser radar and a vehicle body, the laser radar is installed on the vehicle body.
  • the beneficial effect of the optical phased array chip provided by the embodiment of the present application is that: the optical phased array chip provided by the embodiment of the present application uses two waveguides with different materials to make two waveguide layers, and the optical phased array chip Each device is separately arranged on two waveguide layers.
  • the beneficial effect of the laser radar provided by the embodiment of the present application is that the laser radar provided by the embodiment of the present application includes a laser and the above-mentioned optical phased array chip.
  • Fig. 1 is a schematic diagram of the frame structure of the connection relationship between the devices in the optical phased array chip provided by the embodiment of the present application;
  • Fig. 2 is a schematic structural diagram of an optical phased array chip provided by an embodiment of the present application.
  • FIG. 3 is a schematic top view of the first part of the second waveguide layer used in the embodiment of the present application and the device located on the first part; in the figure, the first interlayer converter is not shown;
  • Fig. 4 is a schematic top view of the second part of the second waveguide layer used in the embodiment of the present application and the device located on the second part; in the figure, the second interlayer converter is not shown;
  • Fig. 5 is a schematic top view of the first waveguide layer used in the embodiment of the present application and the device located on the first waveguide layer; in the figure, the first interlayer converter and the second interlayer converter are not shown;
  • Fig. 6 is a schematic diagram of the propagation path of light in one of the second interlayer converters when the distance between the second waveguide layer and the first waveguide layer is relatively close;
  • Fig. 7 is a top view structural schematic diagram of two waveguide sections in Fig. 6;
  • Fig. 8 is a schematic diagram of the propagation path of light in one of the second interlayer converters when the distance between the second waveguide layer and the first waveguide layer is relatively long;
  • FIG. 9 is a schematic top view of the two waveguide sections in FIG. 8 .
  • some embodiments of the present application provide an optical phased array chip, including a substrate layer 100, a buried oxide layer 200, a first waveguide layer 300, an oxide layer 400, and a second waveguide layer arranged in sequence. layer 500 and upper cladding layer 600.
  • the buried oxide layer 200 , the first waveguide layer 300 , the oxide layer 400 , the second waveguide layer 500 and the upper cladding layer 600 are manufactured layer by layer by epitaxial growth technology. It should be noted that the lengths of the second waveguide layer 500 and the first waveguide layer 300 are set according to needs, and are generally shorter than the length of the substrate layer 100. In areas beyond the coverage of the first waveguide layer 300, the oxide layer 400 and the buried oxide layer 200; in the region beyond the coverage of the second waveguide layer 500, the upper cladding layer 600 is connected to the oxide layer 400.
  • thermo-optic coefficient of the second waveguide layer 500 is lower than that of the first waveguide layer 300 .
  • a coupler 700, an optical splitter 710, and a transmitting antenna assembly 720 are formed on the second waveguide layer 500; a phase shifter assembly 730 is formed on the first waveguide layer 300; a Two interlayer converter components 800; wherein, the coupler 700 is in signal communication with the optical splitter 710 through the second waveguide layer 500, and the optical splitter 710 is in signal communication with the phase shifter component 730 through one of the interlayer converter components 800, for phase shifting Transmitter component 730 is in signal communication with transmit antenna component 720 through another layer-to-layer converter component 800 .
  • the transmitting antenna component 720 mentioned here can be a single transmitting antenna 721, and can also be a combination of multiple transmitting antennas 721, which is not limited here; similarly, the phase shifter component 730 can be a single phase shifter 731, or a combination of multiple transmitting antennas 721. It may be a combination of a plurality of phase shifters 731 , which is not limited here.
  • the coupler 700, the transmitting antenna assembly 720, the phase shifter assembly 730, and the interlayer converter assembly 800 can be manufactured through a CMOS process after the corresponding waveguide layers are formed.
  • the laser 910 When in use, first connect the output end of the laser 910 to the input end of the coupler 700 through a waveguide, and then the laser 910 sends a light source signal to the coupler 700, and the coupler 700 couples the light source signal to the inside of the optical phased array chip, through the layer
  • the interlayer converter component 800 is delivered to the phase shifter component 730, which changes its phase, and then is transmitted to the transmitting antenna component 720, and the transmitting antenna component 720 transmits the above-mentioned light source signal into free space.
  • lidar Due to the frequency modulated continuous wave (Frequency Modulated Continuous Wave (FMCW) technology lacks low-cost frequency-modulated light sources.
  • lidar mainly uses pulsed lidar using Time of Flight (ToF) technology.
  • Silicon-on-insulator waveguides among the above-mentioned waveguide materials are not suitable for transmitting particularly high-power optical signals, which limits the application of time-of-flight technology in optical phased array chips; although silicon nitride waveguides can accommodate large optical power, they are more suitable for The fabrication of optical phased array chips in pulsed lidar, but the power consumption of optical phased array chips made of silicon nitride waveguides is relatively large.
  • thermo-optic coefficients the heating efficiency of the phase shifter assembly 730 made of these materials is low, which will lead to a large power consumption.
  • Materials with a strong confinement ability to light generally have a higher thermo-optic coefficient, which is conducive to reducing the power consumption of the phase shifter assembly 730, and can realize a high-speed phase shifter assembly 730 by using an ion implantation process, which can greatly improve the optical phase control.
  • the working speed of the array chip is a higher thermo-optic coefficient, which is conducive to reducing the power consumption of the phase shifter assembly 730, and can realize a high-speed phase shifter assembly 730 by using an ion implantation process, which can greatly improve the optical phase control. The working speed of the array chip.
  • the optical phased array chip uses two waveguides with different materials to make two waveguide layers, then avoids the shortcomings of each waveguide layer, and makes full use of its excellent characteristics to make the optical phased array chip
  • Each device in the method is prepared on a more suitable waveguide layer, thereby reducing the process requirements for device manufacturing, so that in the same optical phased array chip, the optical splitter 710 with high process tolerance can also be prepared.
  • the high-efficiency, low-power phase shifter component 730 can also prepare a weakly coupled large-aperture transmitting antenna component 720, and supports a high-power ToF working mode.
  • each of the above-mentioned devices can be processed in a silicon base through a CMOS process, so the size of the optical phased array chip can be effectively reduced and the integration degree can be improved.
  • the ability of the second waveguide layer 500 to confine light is weaker than that of the first waveguide layer 300, that is, the size of the functional device realized by the first waveguide layer 300 is larger than that realized by the second waveguide layer 500.
  • Functional devices that is, the process constraints required by the first waveguide layer 300 are weaker than those required by the second waveguide layer 500 .
  • the first waveguide layer 300 is a silicon waveguide layer
  • the second waveguide layer 500 is a silicon nitride waveguide layer.
  • the silicon waveguide layer has a strong ability to confine light and has a high thermo-optic coefficient, which is conducive to reducing the power consumption of the phase shifter component 730, and can realize a high-speed phase shifter component 730 by using ion implantation technology, which can greatly improve the performance of the phase shifter component 730. Improve the operating rate of the optical phased array.
  • the confinement of light by the silicon nitride waveguide layer is slightly weaker than that of the silicon waveguide layer, and the antenna made by using this waveguide can produce an antenna with a smaller coupling coefficient and a larger aperture than the silicon waveguide layer under the same process conditions.
  • the silicon nitride waveguide material can accommodate large optical power, which is more suitable for the production of optical phased array chips in pulsed laser radar.
  • these two materials are used in optical phased arrays, and the preparation technology is relatively mature.
  • the optical phased array chip provided by this application is prepared by using these two materials, which is highly practicable.
  • the coupler 700, the optical splitter 710 and the transmitting antenna assembly 720 can be implemented on the silicon nitride waveguide layer
  • the phase shifter assembly 730 can be implemented on the silicon waveguide layer
  • the interlayer converter assembly 800 has silicon waveguide layer and silicon nitride waveguide layer.
  • the silicon nitride waveguide layer is generally above the silicon waveguide layer.
  • the silicon nitride waveguide layer can accommodate a large amount of optical power, so it will not affect the function of the coupler 700 , the optical splitter 710 and the transmitting antenna assembly 720 .
  • the optical power of each channel is significantly reduced, so the functions of the phase shifter component 730 and the interlayer converter component 800 will not be affected.
  • the first waveguide layer 300 and the second waveguide layer 500 may also use other materials, as long as the above functions can be realized.
  • the second waveguide layer 500 is divided into a first part 510 and a second part 520 arranged at intervals, a coupler 700 and a splitter 710 are formed on the first part 510, and the transmitting antenna assembly 720 is formed on the second portion.
  • This can not only reduce the material required for the second waveguide layer 500, but also prevent the signal from the optical splitter 710 from directly entering the transmitting antenna assembly 720 without passing through the phase shifter assembly 730, thereby ensuring the stability of the optical phased array chip's working performance.
  • the above-mentioned first waveguide layer 300 is located between the first part 510 and the second part 520, and one end of the first waveguide layer 300 is in signal communication with the corresponding end of the first part 510 through one of the interlayer converter components 800, the first waveguide The other end of the layer 300 is in signal communication with the corresponding end of the second part 520 through another interlayer converter assembly 800 .
  • the phase shifter component 730 is disposed in the middle of the first waveguide layer 300, the input end is in signal communication with the output end of the optical splitter 710 through one of the interlayer converter components 800, and the output end is through another interlayer converter component 800 Communicate with the input of the transmit antenna assembly 720 .
  • the entire optical phased array chip has a compact structure and meets its manufacturing requirements.
  • Both ends of the first waveguide layer 300 are respectively stacked with corresponding ends of the two parts of the second waveguide layer 500 .
  • the volume of the interlayer converter assembly 800 is the smallest, and the structure of the entire optical phased array chip is compact, meeting its manufacturing requirements.
  • Optical splitter 710 has multiple signal output terminals.
  • the phase shifter component 730 includes a plurality of phase shifters 731 connected to a plurality of signal output ends of the optical splitter in a one-to-one correspondence.
  • the transmitting antenna assembly 720 includes a plurality of transmitting antennas 721 communicating with a plurality of phase shifters in one-to-one correspondence. Specifically, a plurality of phase shifters 731 and a plurality of transmitting antennas 721 can be respectively arranged in an array to realize their regular arrangement and meet the miniaturization design requirement of an optical phased array chip.
  • the signal output end of the first part 510 has a plurality of first waveguide segments 511 corresponding to the plurality of signal output ends of the optical splitter 710 .
  • the second part 520 includes a plurality of second waveguide segments 521 arranged in sequence, and the plurality of second waveguide segments 521 are arranged in one-to-one correspondence with the plurality of first waveguide segments 511 .
  • Each second waveguide segment 521 is provided with a transmitting antenna 721 .
  • the first waveguide layer 300 includes a plurality of third waveguide segments 310 arranged in sequence, and the plurality of third waveguide segments 310 are arranged in one-to-one correspondence with the plurality of first waveguide segments 511 .
  • Each third waveguide segment 310 is provided with a phase shifter 731 .
  • One of the interlayer converter components 800 includes a plurality of first interlayer converters 810 disposed between the plurality of third waveguide segments 310 and the plurality of first waveguide segments 511 in one-to-one correspondence.
  • Another interlayer converter assembly 800 includes a plurality of second interlayer converters 820 disposed between the plurality of third waveguide segments 310 and the plurality of first waveguide segments 511 in one-to-one correspondence.
  • the optical phased array chip provided by this application is provided with a plurality of first interlayer converters 810, a plurality of second interlayer converters 820, a plurality of phase shifters 731, and a plurality of transmitting antennas 721, wherein the first layer
  • the numbers of inter-converters 810, second-layer inter-converters 820, phase shifters 731, and transmit antennas 721 are the same.
  • each device is installed on the corresponding waveguide section one by one, so that the optical signal can be transmitted to each transmitting antenna 721 along a single path after being split by the optical splitter 710, and then transmitted to the free space by the transmitting antenna 721.
  • each device in this embodiment is as follows: the coupler 700 is used to couple the light in the laser 910 to the inside of the optical phased array chip, and the output end is connected to the input end of the optical splitter 710 .
  • the optical splitter 710 is used to equally distribute the optical signal to each input port of the first inter-layer switch 810 .
  • the first interlayer converter 810 is used to realize the conversion of the optical signal from the first waveguide layer 300 to the second waveguide layer 500;
  • the phase shifter 731 is used to change the phase of the optical signal, so that the adjacent phases of the optical signals in each channel The difference is kept fixed, and the output signal will enter the input of the interlayer converter.
  • the second interlayer converter 820 is used to convert the optical signal from the second waveguide layer 500 to the first waveguide layer 300 , and the output signal will enter the input end of the transmitting antenna 721 .
  • the transmitting antenna 721 is used to transmit the optical signals in each channel to free space.
  • the optical phased array chip provided by this embodiment can realize signal transmission between corresponding devices by means of each waveguide section in the waveguide layer, without adding additional signal transmission structures, so that the overall structure of the optical phased array chip is compact and facilitates its miniaturization preparation.
  • the vertical distance between the second waveguide layer 500 and the first waveguide layer 300 there are generally two situations for the vertical distance between the second waveguide layer 500 and the first waveguide layer 300: one situation is that the distance between the two waveguide layers is relatively close, and the vertical distance between the two waveguide layers is The spacing is within the range of greater than 50nm and less than 400nm; in another case, the distance between the two waveguide layers is relatively long, and the vertical spacing between them is within the range of greater than 1 ⁇ m and less than 4 ⁇ m.
  • the structures of the first inter-layer converter 810 and the second inter-layer converter 820 will also change accordingly.
  • both the first interlayer converter 810 and the second interlayer converter 820 can use any type of interlayer converter that can realize evanescent wave coupling, and the first interlayer converter located on the same waveguide segment 810 and the second inter-layer converter 820 may adopt the same model or different models, which are not limited here.
  • the first waveguide section 511 and the third waveguide section 310 are located in the first interlayer converter 810, and the second waveguide section 521 and the third waveguide section The portion of the segment 310 located in the second inter-layer transition 820 is tapered. Both the first interlayer converter 810 and the second interlayer converter 820 are tapered waveguide mode converters.
  • the optical path directions of the two tapered mode converters located on the same third waveguide segment 310 are opposite, and the optical path direction of the tapered mode converter located at the input end is converted from the second waveguide layer 500 to the first waveguide layer 300 , the optical path direction of the tapered mode converter at the output end is converted from the first waveguide layer 300 to the second waveguide layer 500 .
  • the mode effective refractive index of light in the first waveguide layer 300 decreases as the width decreases, while the mode effective refractive index in the second waveguide layer 500 increases as the width increases, so as long as the two tapered waveguide modes are reasonably designed
  • the width of both sides of the converter can make the mode effective refractive index in the first waveguide layer 300 equal to the mode effective refractive index of the second waveguide layer 500 at a certain position, so as long as the length of the tapered waveguide mode converter is sufficient Long, the light can be slowly converted from the first waveguide layer 300 to the second waveguide layer 500 .
  • the whole conversion process is stable and the technology is mature.
  • the distance between the first waveguide layer 300 and the second waveguide layer 500 is relatively far, generally It is said that there will be a relatively thick oxide layer 400 between the two layers. In this way, in each interlayer converter, the light in the first waveguide layer 300 will not undergo evanescent wave coupling with the light in the second waveguide layer 500 , which is realized by using two layers of gratings here.
  • first waveguide segment 511 and the third waveguide segment 310 are located in the first interlayer converter 810, and the second waveguide segment 521 and the third waveguide segment 310 are located in the second interlayer converter 820.
  • a grating structure 900 is formed on them.
  • the optical signals in two oppositely arranged waveguide sections in the same interlayer converter can realize interlayer conversion through the grating structure 900 .
  • the above-mentioned grating structure 900 can be manufactured on a corresponding waveguide segment by using an etching process.
  • the arrangement of the grating structure 900 destroys the original waveguide structure, so that light can be emitted or received along a certain direction.
  • the upward or downward emission angle ⁇ of the grating structure 900 can be changed by changing the grating period and duty cycle.
  • the angle ⁇ received by the grating structure 900 from below or from above can be changed by changing the grating period and duty cycle of the grating structure 900 .
  • the above-mentioned angle ⁇ can be calculated by simulation software before preparing the grating structure 900, so as to ensure that the prepared grating structure 900 meets the requirements, so that the optical signal can pass through the two oppositely arranged grating structures 900 to realize the gap between the two waveguide segments. transition between layers.
  • the light entering the second waveguide layer 500 through the coupler 700 can be transmitted to the grating structure 900 on the third waveguide section 310 through the optical splitter 710 and then received by the grating structure 900 on the first waveguide section 511.
  • the above-mentioned grating structure 900 is arranged in a fan shape to achieve a wider range of signal reception and transmission, ensuring that no signal loss occurs when the optical signal is converted from one waveguide segment to another waveguide segment, or the signal loss is minimized.
  • the light emitting angle or the light receiving angle of the grating structure 900 is 0-90°.
  • the specific angle can be determined according to the material and manufacturing process of the first waveguide layer 300 , the second waveguide layer 500 , and the corresponding interlayer converters, and there is no unique limitation here.
  • the light emitting angle or the light receiving angle of the grating structure 900 is 0-60°. With this angle range, the range of optional materials is wider.
  • a laser radar including a laser radar transmitting system, a receiving system, and a signal processing system.
  • the laser radar transmitting system includes a laser 910 and any of the above-mentioned embodiments.
  • Optical Phased Array Chip Specifically, the laser 910 adopts an external laser 910 module. The laser 910 is used to generate the light source signal of the optical phased array chip, and the output end is connected with the input end of the coupler 700 .
  • the lidar provided in the embodiments of the present application includes the optical phased array chip provided in the above embodiments.
  • the optical phased array chip has the same structural features and functions as the optical phased array chip in the above embodiments, and details are not described here.

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Remote Sensing (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Optics & Photonics (AREA)
  • Optical Integrated Circuits (AREA)

Abstract

L'invention concerne une puce de réseau à commande de phase optique et un radar laser. La puce de réseau à commande de phase optique comprend une couche de substrat (100), une couche d'oxyde enterrée (200), une première couche de guide d'ondes (300), une couche d'oxyde (400), une seconde couche de guide d'ondes (500) et une gaine supérieure (600) qui sont disposées en séquence, un ensemble déphaseur (730) étant formé sur la première couche de guide d'ondes (300) ; et deux ensembles convertisseurs inter-couches (800) sont formés entre la première couche de guide d'ondes (300) et la seconde couche de guide d'ondes (500). Le radar laser comprend un système de transmission de radar laser, un système de réception et un système de traitement de signal, le système de transmission de radar laser comprenant un dispositif laser et la puce de réseau à commande de phase optique. Selon la puce de réseau à commande de phase optique et le radar laser, les exigences de traitement de la fabrication de divers dispositifs dans la puce de réseau à commande de phase optique sont réduites, et les performances de la puce de réseau à commande de phase optique sont améliorées.
PCT/CN2021/111753 2021-08-10 2021-08-10 Puce de réseau à commande de phase optique et radar laser WO2023015438A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN202180007949.2A CN114945836B (zh) 2021-08-10 2021-08-10 光学相控阵芯片以及激光雷达
PCT/CN2021/111753 WO2023015438A1 (fr) 2021-08-10 2021-08-10 Puce de réseau à commande de phase optique et radar laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CN2021/111753 WO2023015438A1 (fr) 2021-08-10 2021-08-10 Puce de réseau à commande de phase optique et radar laser

Publications (1)

Publication Number Publication Date
WO2023015438A1 true WO2023015438A1 (fr) 2023-02-16

Family

ID=82906138

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2021/111753 WO2023015438A1 (fr) 2021-08-10 2021-08-10 Puce de réseau à commande de phase optique et radar laser

Country Status (2)

Country Link
CN (1) CN114945836B (fr)
WO (1) WO2023015438A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116106862A (zh) * 2023-04-10 2023-05-12 深圳市速腾聚创科技有限公司 光芯片、激光雷达、自动驾驶系统及可移动设备
CN116755189A (zh) * 2023-08-16 2023-09-15 深圳市速腾聚创科技有限公司 硅光芯片、激光雷达及可移动设备

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116794769A (zh) * 2022-03-16 2023-09-22 华为技术有限公司 一种光学芯片及其制备方法
CN116224296B (zh) * 2023-03-28 2023-08-11 之江实验室 一种相控阵雷达和信息获取方法、存储介质及电子设备

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20170199328A1 (en) * 2016-01-13 2017-07-13 Oracle International Corporation Hybrid-integrated multi-chip module
CN110750003A (zh) * 2019-10-15 2020-02-04 西安电子科技大学 一种快速二维扫描光波导相控阵列结构
CN110857977A (zh) * 2018-08-23 2020-03-03 北京万集科技股份有限公司 光学天线、相控阵激光雷达及光学天线的二维扫描方法
CN111220963A (zh) * 2018-11-27 2020-06-02 北京万集科技股份有限公司 多层材料相控阵激光雷达发射芯片、制作方法及激光雷达
CN111751926A (zh) * 2019-03-28 2020-10-09 上海新微技术研发中心有限公司 用于相控阵发射阵列的波导光栅天线及其形成方法
CN112506265A (zh) * 2020-11-13 2021-03-16 华为技术有限公司 一种光计算装置以及计算方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109991582B (zh) * 2019-03-13 2023-11-03 上海交通大学 硅基混合集成激光雷达芯片系统

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20170199328A1 (en) * 2016-01-13 2017-07-13 Oracle International Corporation Hybrid-integrated multi-chip module
CN110857977A (zh) * 2018-08-23 2020-03-03 北京万集科技股份有限公司 光学天线、相控阵激光雷达及光学天线的二维扫描方法
CN111220963A (zh) * 2018-11-27 2020-06-02 北京万集科技股份有限公司 多层材料相控阵激光雷达发射芯片、制作方法及激光雷达
CN111751926A (zh) * 2019-03-28 2020-10-09 上海新微技术研发中心有限公司 用于相控阵发射阵列的波导光栅天线及其形成方法
CN110750003A (zh) * 2019-10-15 2020-02-04 西安电子科技大学 一种快速二维扫描光波导相控阵列结构
CN112506265A (zh) * 2020-11-13 2021-03-16 华为技术有限公司 一种光计算装置以及计算方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116106862A (zh) * 2023-04-10 2023-05-12 深圳市速腾聚创科技有限公司 光芯片、激光雷达、自动驾驶系统及可移动设备
CN116106862B (zh) * 2023-04-10 2023-08-04 深圳市速腾聚创科技有限公司 光芯片、激光雷达、自动驾驶系统及可移动设备
CN116755189A (zh) * 2023-08-16 2023-09-15 深圳市速腾聚创科技有限公司 硅光芯片、激光雷达及可移动设备
CN116755189B (zh) * 2023-08-16 2024-04-26 深圳市速腾聚创科技有限公司 硅光芯片、激光雷达及可移动设备

Also Published As

Publication number Publication date
CN114945836B (zh) 2023-03-10
CN114945836A (zh) 2022-08-26

Similar Documents

Publication Publication Date Title
WO2023015438A1 (fr) Puce de réseau à commande de phase optique et radar laser
CN103022716B (zh) 相位幅度校准的平面喇叭天线
WO2015096070A1 (fr) Diviseur de polarisation et rotateur de polarisation de guide d'onde
CN103022708B (zh) 内嵌金属化过孔相位校准的基片集成波导天线
CN111505766A (zh) 一种基于硅基集成磁光环行器的光学全双工收发组件
CN107611774A (zh) 一种硅基集成可调谐激光器结构及其控制方法
CN215867107U (zh) 一种光学相控阵的激光雷达发射接收装置
CN110673419B (zh) 一种提升光学相控阵扫描范围的方法及光学天线器件
CN109524772B (zh) 一种5g圆极化多波束天线
CN113985522B (zh) 基于硅-氮化硅三维集成的微环光开关
JPS5975656A (ja) 半導体集積回路構造
US20200212566A1 (en) Dual band beam generator
CN107102453B (zh) 一种鳍线加载hemt嵌套结构的太赫兹波快速调制器
CN209590261U (zh) 激光发射系统及激光雷达
CN111740786B (zh) 一种集成光波导波束赋形装置
CN103022681B (zh) 内嵌金属化过孔幅度校准的基片集成波导天线
CN103022706B (zh) 内嵌金属化过孔相位幅度校准的基片集成波导天线
CN103606752B (zh) 薄基片相位校正宽带差波束平面喇叭天线
CN103606750B (zh) 薄基片相位校正准八木平面喇叭天线
CN115053172A (zh) 一种移相器、光相控阵以及光相控阵的制备方法
CN103022718A (zh) 相位幅度校准的三维封装表面天线
CN103618146B (zh) 薄基片相位校正宽带平面喇叭天线
CN103594814B (zh) 薄基片相位校正振子平面喇叭天线
US11978954B2 (en) Compact low-profile aperture antenna with integrated diplexer
CN115291324B (zh) 一种硅基全光二极管

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 21953070

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 21953070

Country of ref document: EP

Kind code of ref document: A1