WO2023001016A1

WO2023001016A1 - Semiconductor process chamber

Info

Publication number: WO2023001016A1
Application number: PCT/CN2022/105028
Authority: WO
Inventors: 杨健; 郭冰亮; 武树波; 宋玲彦; 马迎功; 赵晨光
Original assignee: 北京北方华创微电子装备有限公司
Priority date: 2021-07-22
Filing date: 2022-07-12
Publication date: 2023-01-26
Also published as: TW202305900A; CN115679271A; TWI813373B

Abstract

A semiconductor process chamber, comprising a chamber body (100), a shielding assembly (1), a connecting sleeve (2), a grounding assembly (3), and a bearing apparatus (4). The bearing apparatus (4) comprises a liftable base (41) and a deposition ring (42) arranged around the base (41); the shielding assembly (1) comprises a shielding sleeve (11) and a clamp ring portion (12), the shielding sleeve (11) being fixed and electrically connected to the clamp ring portion (12); the top of the shielding sleeve (11) is fixed and electrically connected to the chamber body (100), and when the base (41) is raised to a first position, the clamp ring portion (12) is arranged around the deposition ring (42) and is in electrically conductive contact with the deposition ring (42); the connecting sleeve (2) is disposed between the shielding sleeve (11) and the chamber body (100) in a surrounding manner, the top of the connecting sleeve (2) is fixed and electrically connected to the chamber body (100), and the bottom of the connecting sleeve (2) is electrically connected to the bottom of the shielding sleeve (11); the grounding assembly (3) is disposed below the base (41), and when the base (41) is raised to the first position, the grounding assembly (3) is in electrically conductive contact with the bottom of the connecting sleeve (2).

Description

Semiconductor process chamber

technical field

The present application relates to the technical field of semiconductor processing, and in particular, the present application relates to a semiconductor process chamber.

Background technique

At present, physical vapor deposition (Physical vapor deposition, PVD) technology has been widely used in the field of integrated circuit (Integrated circuit, IC) manufacturing because of its stable process, flexible technology, and suitability for mass production. The main applications of PVD technology include titanium (Ti) used to make the adhesion layer material in the front contact layer, the copper seed layer (Cu) in the back metal interconnection, various metal fillings in advanced packaging processes, Such as nickel (Ni), titanium tungsten (TiW) and so on. With the evolution of integrated circuit transistors to smaller sizes, more and more structures with higher aspect ratio (AR) appear in integrated circuit devices. Traditional PVD technology is difficult for most particles due to the randomness of particle movement angles. Reaching the bottom of a high aspect ratio structure (AR>5) is difficult to meet the requirements of pore filling in advanced processes. Therefore, improving the directionality of particle motion has become the development trend of PVD technology.

In the prior art, improving the ionization rate of particles in the PVD process is the most important technology to improve the directionality of particle motion. Specifically, using a magnetron with stronger power density, high process pressure and radio frequency (Radio frequency, RF) sputtering Injection technology is used to improve the ionization rate of particles in PVD process. At present, the RF frequency generally uses very high frequency (greater than 27Mhz), which greatly increases the ionization rate of particles to improve the directionality of particle motion in the process, and makes PVD technology filling high aspect ratio structures a reality.

However, VHF RF technology also brings many problems. For example, under high process pressure, each structure in the process chamber will cause arcing problems due to potential differences, and even cause plasma ignition between the structures. brilliance, which seriously affects process stability and causes particle pollution problems.

Contents of the invention

In view of the shortcomings of the existing methods, the present application proposes a semiconductor process chamber to solve the technical problems in the prior art that the process stability is affected by the sparking problem and particle pollution exists.

In a first aspect, an embodiment of the present application provides a semiconductor process chamber, including: a chamber body, a shielding assembly, a connecting sleeve, a grounding assembly, and a carrying device; wherein, the chamber body is grounded;

The carrying device includes a liftable pedestal disposed in the chamber body and a deposition ring disposed around the pedestal;

The shielding assembly includes a shielding sleeve and a pressure ring part, the shielding sleeve and the pressure ring part are fixed and electrically connected; the top of the shielding sleeve is fixed and electrically connected to the chamber body, and the pressure ring part is fixed and electrically connected. The ring part is arranged around the deposition ring and is in conductive contact with the deposition ring when the base is raised to the first position where the process is performed;

The connection sleeve is arranged around the shielding sleeve and the chamber body, and the top of the connection sleeve is fixed to the chamber body and electrically connected, and the bottom of the connection sleeve is connected to the chamber body. The bottom of the shielding sleeve is conductively connected;

The grounding component is disposed under the base, and when the base is raised to the first position, the grounding component is in conductive contact with the bottom of the connecting sleeve.

In an embodiment of the present application, the chamber body includes a first split body and an adapter disposed above the first split body; the outer peripheral surface of the shielding sleeve is close to the shielding sleeve An outer flange is provided on the top end of the outer flange, the bottom surface of the outer flange is superimposed on the top surface of the adapter piece, and the outer flange is fixedly connected with the adapter piece.

In an embodiment of the present application, the shielding assembly further includes a plurality of first fasteners, and the plurality of first fasteners are passed through the outer flange and connected with the adapter, It is used to press the shielding sleeve tightly on the top surface of the adapter piece.

In an embodiment of the present application, a top flange is provided on the top end of the outer peripheral surface of the connecting sleeve, the top surface of the top flange abuts against the bottom surface of the adapter, and the top flange The flange is fixedly connected with the adapter piece; the bottom end of the inner peripheral surface of the connection sleeve is provided with a bottom flange, and the top surface of the bottom flange is against the bottom surface of the pressure ring part.

In an embodiment of the present application, the semiconductor process chamber further includes a first conductive ring and a second conductive ring, and the first conductive ring is arranged on the top surface of the top flange and the transition member. Between the bottom surfaces, the second conductive ring is disposed between the top surface of the bottom flange and the bottom surface of the pressure ring portion.

In an embodiment of the present application, the top flange is provided with a first limiting groove for limiting the first conductive ring; the bottom flange is provided with a second limiting groove for Limit the second conductive ring.

In an embodiment of the present application, the semiconductor process chamber further includes a plurality of second fasteners, the plurality of second fasteners pass through the top flange, and are connected to the adapter The connection is used to compress the first conductive ring and the second conductive ring.

In an embodiment of the present application, the grounding assembly includes a grounding component and a plurality of elastic contacts, wherein the grounding component is arranged under the base and can be raised and lowered with the base; The elastic contact pieces are arranged at intervals along the circumferential direction of the grounding component, and each of the elastic contact pieces is respectively connected to the top surface of the grounding component and the connecting sleeve when the base is raised to the first position. The bottom surface of the barrel is in elastic contact and is electrically conductive.

In an embodiment of the present application, the process chamber further includes an insulating shielding ring, the insulating shielding ring is disposed on the ground member and surrounds the base, the insulating shielding ring is connected to the pressure Each of the ring portion, the connecting sleeve, the base, and the deposition ring has a preset distance between surfaces facing each other.

In an embodiment of the present application, the predetermined distance is less than or equal to 1.5 mm.

The beneficial technical effects brought by the technical solutions provided by the embodiments of the present application are:

In the semiconductor process chamber provided by the embodiment of the present application, the chamber body is protected from being polluted by sputtered particles by means of a shielding assembly, and at the same time, by fixing the top of the shielding sleeve to the chamber body and electrically connecting it, the plasma can be provided Grounding loop, on this basis, by surrounding the connecting sleeve between the shielding sleeve and the chamber body, the top of the connecting sleeve is fixed to the chamber body and electrically connected, and the bottom is electrically connected to the bottom of the shielding sleeve , the bottom of the shielding sleeve can form a grounding loop through the connecting sleeve and the chamber body, so as to avoid large potential, thereby reducing the risk of ignition or even plasma ignition between the shielding sleeve and nearby components. At the same time, when the base is at the first position, the bottom of the connecting sleeve is in conductive contact with the bottom of the grounding assembly, so that the bottom of the shielding sleeve can also form a grounding loop through the connecting sleeve and the grounding assembly, thereby further improving the shielding sleeve. The grounding ability and radio frequency blocking ability of the barrel. In addition, by fixing the shielding sleeve and the pressing ring part and conducting conductive connection, and making the pressing ring part conduction contact with the deposition ring when the base is raised to the first position, the pressing ring part and the deposition ring can pass through the shielding sleeve The cylinder and the chamber body form a ground loop, which can avoid the potential suspension of the pressure ring part, and then reduce the risk of sparking or even plasma ignition between the pressure ring part and nearby components.

Therefore, the semiconductor process chamber provided by the embodiment of the present application can achieve a relatively small potential difference between the structures in the chamber body, thereby reducing the risk of sparking and plasma ignition between the structures, especially It is suitable for processes under very high frequency process conditions, which can greatly improve process stability and reduce particle pollution.

Additional aspects and advantages of the application will be set forth in part in the description which follows, and will become apparent from the description, or may be learned by practice of the application.

Description of drawings

The above and/or additional aspects and advantages of the present application will become apparent and easy to understand from the following description of the embodiments in conjunction with the accompanying drawings, wherein:

FIG. 1 is a schematic cross-sectional view of a semiconductor process chamber provided in an embodiment of the present application;

Fig. 2 is a three-dimensional schematic diagram of a connecting sleeve provided in an embodiment of the present application;

FIG. 3 is a schematic top view of a first conductive ring and a second conductive ring provided by an embodiment of the present application;

Fig. 4 is a partially enlarged schematic cross-sectional view of a connecting sleeve provided in an embodiment of the present application;

FIG. 5A is a schematic top view of a grounding assembly provided by an embodiment of the present application;

FIG. 5B is a schematic side view of a grounding assembly provided by an embodiment of the present application;

FIG. 6A is a schematic top view of an insulating shielding ring provided by an embodiment of the present application;

FIG. 6B is a schematic cross-sectional view of an insulating shielding ring provided by an embodiment of the present application;

FIG. 7 is a partially enlarged schematic cross-sectional view of a semiconductor process chamber provided in an embodiment of the present application;

FIG. 8 is a schematic cross-sectional view of a conventional semiconductor process chamber with omitted parts of the structure.

detailed description

The present application is described in detail below, and examples of embodiments of the present application are shown in the drawings, wherein the same or similar reference numerals denote the same or similar components or components having the same or similar functions throughout. Also, detailed descriptions of known technologies will be omitted if they are not necessary to illustrate the features of the present application. The embodiments described below by referring to the figures are exemplary only for explaining the present application, and are not construed as limiting the present application.

Those skilled in the art can understand that, unless otherwise defined, all terms (including technical terms and scientific terms) used herein have the same meanings as commonly understood by those of ordinary skill in the art to which this application belongs. It should also be understood that terms, such as those defined in commonly used dictionaries, should be understood to have meanings consistent with their meaning in the context of the prior art, and unless specifically defined as herein, are not intended to be idealized or overly Formal meaning to explain.

FIG. 8 is a schematic diagram of a partial structure of a currently used semiconductor process chamber. As shown in FIG. 8 , the base 201 is used to carry the wafer during the process, and the particles sputtered from the target 202 fall onto the wafer to form a film. The deposition ring 203 is used to shield the deposited particles to prevent the space of the chamber body 204 below the susceptor 201 from being polluted. In order to show the inner structure of the chamber more clearly, the chamber body 204 only shows the adapter for installing the shielding sleeve 205 . The shielding sleeve 205 can be grounded through an adapter to form a plasma grounding loop, and the shielding sleeve 205 is also used to protect the chamber body 204 from being polluted by sputtered particles. The pressure ring 206 can cover the gap between the shielding sleeve 205 and the deposition ring 203 , so as to protect the structure inside the chamber body 204 below it from being polluted by particles sputtered by the target. The grounding component 207 is designed for the radio frequency sputtering process. The grounding component 207 is connected to the support structure 209 at the bottom of the base 201. When performing the process, the grounding component 207 is in electrical contact with the lower part of the shielding sleeve 205 through the elastic contact 208 , and the grounding component 207 is grounded through the support structure 209 , this grounding method can enhance the grounding capability of the shielding sleeve 205 .

However, when the above-mentioned semiconductor process chamber is performing the process of filling the high aspect ratio structure, in order to meet the process requirements, the distance between the target 202 and the base 201 (that is, the distance between the target and the base) is usually set relatively large (for example, greater than 100 mm. ), correspondingly, the axial length of the shielding sleeve 205 is also set longer. During the sputtering process using very high frequency (40.68MHz and above frequency) at RF frequency, although the top of the shielding sleeve 205 is electrically connected to the chamber body 204 to form a ground, but due to the axial direction of the shielding sleeve 205 Due to the large length, the bottom of the shielding sleeve 205 will still induce a relatively large potential because it is far away from the grounding position, and it is very likely to spark between the grounding part 207 and the elastic contact 208 under high-pressure process conditions , even in the area near the bottom of the shielding sleeve 205 (for example, the area marked ① in FIG. 8 ) causes plasma ignition, resulting in process instability and particle contamination problems. In addition, as shown in FIG. 8 , since the pressure ring 206 is separated from the shielding sleeve 205, there is a gap between the two. During the process, the pressure ring 206 is at a floating potential, which will induce a high potential, which is easy to Sparking occurs with the shielding sleeve 205 and the ground member 207 .

The technical solution of the present application and how the technical solution of the present application solves the above technical problems will be described in detail below with specific embodiments.

The embodiment of the present application provides a semiconductor process chamber. The structure schematic diagram of the semiconductor process chamber is shown in FIG. Wherein, the carrying device 4 includes a base 41 that can be lifted and lowered in the chamber body 100 and a deposition ring 42 that is arranged around the base 41; the shielding assembly 1 includes a shielding sleeve 11 and a pressure ring portion 12, both of which are fixed, and conductively connected. The top of the shielding sleeve 11 is fixedly connected to the chamber body 100 for forming a ground loop with the chamber body 100, and the pressure ring portion 12 rises to the first position where the process is performed on the base 41 (that is, the base 41 is performing a process) When the position of time), it is arranged around the deposition ring 42, and is in conductive contact with the deposition ring 42; the connecting sleeve 2 is arranged around the shielding sleeve 11 and the chamber body 100, and the top of the connection sleeve 2 is connected to the chamber body 100 is fixed and electrically connected, the bottom of the connecting sleeve 2 is electrically connected to the bottom of the shielding sleeve 11, so that the bottom of the shielding sleeve 11 can form a grounding loop with the chamber body 100; the grounding component 3 is arranged on the base 41 When the base 41 rises to the first position, the grounding component 3 is in conductive contact with the bottom of the connecting sleeve 2 , so that the bottom of the shielding sleeve 11 can form a grounding loop with the grounding component 3 .

As shown in FIG. 1 , the semiconductor process chamber can specifically be used to perform a physical vapor deposition process, and can work under very high frequency process conditions. The chamber body 100 may be a structure with a circular cavity for accommodating wafers for performing processes. The carrying device 4 may specifically include a base 41 and a deposition ring 42 arranged around the base 41. The base 41 is used to carry a wafer (not shown in the figure), and the deposition ring 42 is used to shield deposited particles and prevent the chamber body from 100 The space below the base 41 is contaminated. The base 41 may be disposed at a central position in the chamber body 100 through the support structure 43 , but the embodiment of the present application is not limited thereto.

The above-mentioned shielding assembly 1 is used to protect the chamber body 100 from being polluted by sputtered particles, and can provide a grounding loop for the plasma. Specifically, the shielding assembly 1 includes a shielding sleeve 11 and a pressure ring portion 12. The shielding sleeve 11 is specifically a cylindrical structure made of a metal material. The top of the shielding sleeve 11 is fixed to the chamber body 100 and electrically connected. , for grounding through the chamber body 100 to provide a ground return for the plasma. The pressure ring part 12 is located at the bottom of the shielding sleeve 11, and is fixed with the shielding sleeve 11, and is connected electrically; Conductive contact. By fixing the shielding sleeve 11 and the pressure ring part 12 and electrically connecting them, and making the pressure ring part 12 in conductive contact with the deposition ring 42 when the base 41 rises to the first position, the pressure ring part 12, the deposition ring 42 can form a grounding loop through the shielding sleeve 11 and the chamber body 100, so as to avoid potential suspension of the pressure ring part 12, thereby reducing the risk of ignition or even plasma ignition between the pressure ring part 12 and nearby components.

The connecting sleeve 2 can adopt a cylindrical structure made of metal material, and the connecting sleeve 2 can be arranged around the shielding sleeve 11 and the chamber body 100, specifically, it can be sleeved on the outer periphery of the shielding sleeve 11 and at intervals. bottom. The top of the connecting sleeve 2 is fixed to the chamber body 100 and electrically connected, and the bottom of the connecting sleeve 2 is electrically connected to the bottom of the shielding sleeve 11, so that the bottom of the shielding sleeve 11 can be connected to the chamber body through the connecting sleeve 2 100 forms a grounding loop to avoid a large potential induced due to the distance between the bottom of the shielding sleeve 11 and the grounding position when the axial dimension of the shielding sleeve 11 is large, so that the shielding sleeve 11 and nearby components can be reduced. There is a risk of sparking or even plasma ignition between them.

The grounding assembly 3 can be arranged under the base 41, and when the base 41 is lifted to the first position driven by the support structure 43, the grounding assembly 3 rises with the base 41, and the deposition ring 42 and the pressure ring part 12 conduct electricity contact, the grounding component 3 is in conductive contact with the bottom of the connecting sleeve 2, so that the bottom of the shielding sleeve 11 can also form a grounding loop through the connecting sleeve 2 and the grounding component 3, thereby further improving the grounding capability of the shielding sleeve 11 and RF blocking capability. When the execution process is stopped, the base 41 can be driven by the support structure 43 to drop to the second position where the sheet is taken and placed, and the grounding assembly 3 descends with the base 41. At this time, the connecting sleeve 2 is separated from the grounding assembly 3 to disconnect the grounding circuit.

It should be noted that the embodiment of the present application does not limit the specific structure and process conditions of the semiconductor process chamber, so the embodiment of the present application is not limited thereto, and those skilled in the art can adjust the settings according to the actual situation.

In an embodiment of the present application, as shown in FIG. 1 , the chamber body 100 includes a first split body 101 and an adapter 102 disposed above the first split body 101 ; the outer peripheral surface of the shielding sleeve 11 , and An outer flange 111 is disposed near the top of the shielding sleeve 11 , the bottom surface of the outer flange 111 overlaps the top surface of the adapter 102 , and the outer flange 111 is fixedly connected to the adapter 102 . The outer flange 111 is close to the top of the shielding sleeve 11, which means that the distance between the outer flange 111 and the top of the shielding sleeve 11 is smaller than the distance between the bottom of the shielding sleeve 11. In practical applications, it can be determined according to Specifically, the distance between the outer flange 111 and the top end of the shielding sleeve 11 needs to be set. It should be noted that the embodiment of the present application does not limit the specific structure of the shielding sleeve 11 , so the embodiment of the present application is not limited thereto, and those skilled in the art can adjust the setting according to the actual situation.

As shown in FIG. 1 , the first split body 101 is, for example, a cylindrical structure made of metal material, and a circular cavity structure is formed inside the first split body 101 for accommodating the carrying device 4 , the shielding component 1 and the connecting sleeve 2 and other components, but the embodiment of the present application does not limit the specific structure of the first split body 101 . The adapter 102 specifically adopts a ring structure made of metal, and the adapter 102 is specifically arranged on the top of the first body 101 by means of bolt connection, but the embodiment of the present application is not limited thereto. For example, the adapter 102 It can also be connected with the first split body 101 by welding. The shielding sleeve 11 can be integrally formed with the outer flange 111, the shielding sleeve 11 can be nested in the adapter 102, the outer flange 111 can be fixedly connected with the adapter 102, and the outer peripheral surface of the shielding sleeve 11 can be connected with The inner end surface of the adapter piece 102 is closely fitted. With the above design, the structure of the embodiment of the present application is simple, and the contact area can be increased to improve the conductivity, thereby reducing the potential difference between the shielding sleeve 11 and other structures in the chamber body 100, for example, reducing the potential between the shielding sleeve 11 and the carrying device 4 Poor, thereby further improving process stability.

In an embodiment of the present application, as shown in FIG. 1 , the pressure ring portion 12 and the shielding sleeve 11 are integrally formed. Specifically, the pressure ring part 12 includes an integrally formed connection ring 121 and a pressure ring 122 , the pressure ring 122 is located inside the connection ring 121 , and the pressure ring 122 is used to compress the deposition ring 42 of the carrying device 4 . The connection ring 121 is directly formed on the inner wall of the shielding sleeve 11 , and specifically may be a ring structure, and the connection ring 121 may be used for conductive connection with the connection sleeve 2 . A pressure ring 122 is integrally formed on the inner end surface of the connection ring 121 . The thickness of the pressure ring 122 may be smaller than that of the connection ring 121 , and the top surface of the pressure ring 122 is flush with the top surface of the connection ring 121 . The bottom surface of the pressure ring 122 is used to press against the top surface of the deposition ring 42 to achieve conductive contact, and cooperate with the deposition ring 42 to shield the deposited particles, thereby preventing the space of the chamber body 100 below the base 41 from being destroyed. pollute. With the above design, since the pressure ring 122 and the shielding sleeve 11 are integrally structured (integrated), and the shielding sleeve 11 is connected to the adapter 102, the potential on the pressure ring 122 will be greatly reduced, thereby preventing the pressure ring 122 from being connected to the adapter 102. The base 41 of the carrying device 4 sparks, and the sparking caused by the separate structure of the pressure ring and the shielding sleeve in the prior art can be avoided, which further improves the process stability.

In an embodiment of the present application, as shown in FIG. 1 , the shielding assembly 1 includes a plurality of first fasteners 13, and the plurality of first fasteners 13 are passed through the outer flange 111 and connected with the adapter 102 for pressing the shielding sleeve 11 onto the top surface of the adapter 102 . Specifically, the first fasteners 13 are, for example, bolts, and a plurality of first fasteners 13 are evenly distributed along the circumference of the outer flange 111. After passing through the outer flange 111, the first fasteners 13 are connected to the adapter 102 threaded connection. With the above design, the outer flange 111 is pressed against the top surface of the adapter 102 to increase the conductive contact area, thereby further reducing the potential difference between the shielding sleeve 11 and other structures, thereby avoiding sparking. However, the embodiment of the present application does not limit the specific type of the first fastening member 13 , for example, the first fastening member 13 may also use a pin. Therefore, the embodiment of the present application is not limited thereto, and those skilled in the art can adjust the setting by themselves according to the actual situation.

In one embodiment of the present application, as shown in FIG. 1 and FIG. 2 , a top flange 211 is provided on the top end of the outer peripheral surface of the connecting sleeve 2 , and the top surface of the top flange 211 abuts against the bottom surface of the adapter 102 and the top flange 211 is fixedly connected with the adapter 102; the bottom end of the inner peripheral surface of the connecting sleeve 2 is provided with a bottom flange 212, and the top surface of the bottom flange 212 is against the bottom surface of the pressure ring part 12.

As shown in FIG. 1 and FIG. 2 , the connecting sleeve 2 can be made of metal material into a circular sleeve structure. A top flange 211 is provided on the top end of the outer peripheral surface of the connecting sleeve 2 , and the top flange 211 extends radially outward from the top end of the connecting sleeve 2 . The bottom end of the inner peripheral surface of the connection sleeve 2 is provided with a bottom flange 212 , and the bottom flange 212 extends radially inwardly from the bottom end of the connection sleeve 2 . The connecting sleeve 2 is integrally sheathed on the outer periphery and the bottom of the shielding sleeve 11. Specifically, the top surface of the top flange 211 can be fitted to the bottom surface of the adapter 102, and the top flange 211 and the adapter 102 are fixed. For connection, the top surface of the bottom flange 212 can be attached to the bottom surface of the connecting ring 121 of the pressure ring part 12 . With the above-mentioned design, the conductive contact area between the connecting sleeve 2 and the shielding sleeve 11 is increased to improve the conductivity, so as to reduce the potential difference between the shielding sleeve 11 connecting the sleeve 2 and other structures in the chamber body 100, thereby Further reduce the possibility of sparking.

In an embodiment of the present application, as shown in FIG. 1 to FIG. 3 , the semiconductor process chamber further includes a first conductive ring 22 and a second conductive ring 23, and the first conductive ring 22 is arranged on the top of the top flange 211. Between the top surface and the bottom surface of the adapter part 102 , the second conductive ring 23 is disposed between the top surface of the bottom flange 212 and the bottom surface of the pressure ring part 12 .

As shown in Figures 1 to 3, both the first conductive ring 22 and the second conductive ring 23 can be made of an alloy material with better electrical conductivity, for example, it can be made of copper-gold or copper-silver alloy material to improve the second conductive ring. The conductive performance of the first conductive ring 22 and the second conductive ring 23 , but the embodiment of the present application does not limit the specific materials of the first conductive ring 22 and the second conductive ring 23 , as long as the conductive performance is better. Both the first conductive ring 22 and the second conductive ring 23 can be arranged in a spiral shape, and have better elasticity, but the embodiment of the present application does not limit the specific shape of the two conductive rings, and those skilled in the art can make their own according to the actual situation. Adjust settings. The first conductive ring 22 is arranged between the top surface of the top flange 211 of the connection sleeve 2 and the bottom surface of the adapter 102, and the second conductive ring 23 is arranged on the connection between the top surface of the bottom flange 212 and the pressure ring part 12. Between the bottom surface of the ring 121, because the first conductive ring 22 and the second conductive ring 23 have better conductive properties, thereby further improving the conductivity between the shielding sleeve 11 and the connecting sleeve 2; and because the first conductive ring 22 And the second conductive ring 23 has elasticity, which can not only increase the conductive contact area between the shielding sleeve 11 and the connecting sleeve 2, but also avoid hard contact between the two, thereby reducing the failure rate of the embodiment of the present application.

In one embodiment of the present application, as shown in FIGS. 1 to 4 , the top flange 211 is provided with a first limiting groove 213 for limiting the first conductive ring 22 ; the top surface of the bottom flange 212 A second limiting groove 214 is opened on the top for limiting the second conductive ring 23 .

As shown in Figures 1 to 4, the top flange 211 of the connecting sleeve 2 is provided with a first limiting groove 213 extending in the circumferential direction. The cross-sectional shape of the groove 213 can be shown in FIG. 4 , but the embodiment of the present application is not limited thereto, and those skilled in the art can adjust the setting according to the actual situation. The bottom of the first conductive ring 22 can be disposed in the first limiting groove 213 , and the top of the first conductive ring 22 can protrude from the top surface of the top flange 211 to facilitate contact with the bottom surface of the adapter 102 . A second limiting groove 214 is defined on the top surface of the bottom flange 212 of the connecting sleeve 2 , and the second limiting groove 214 can extend along the circumference of the bottom flange 212 . For example, the second limiting groove 214 can adopt a dovetail groove structure, that is, the cross-sectional shape of the second limiting groove 214 can be referred to as shown in FIG. 4 , but the embodiment of the present application is not limited thereto. Adjust the settings according to the actual situation. The bottom of the second conductive ring 23 is disposed in the second limiting groove 214, and its top can protrude from the top surface of the bottom flange 212 so as to contact with the bottom surface of the connecting ring 121 of the pressure ring part 12. The above-mentioned design makes the structural design of the embodiment of the present application reasonable and prevents the first conductive ring 22 and the second conductive ring 23 from falling off, thereby improving the stability of the embodiment of the present application and reducing the failure rate.

In one embodiment of the present application, as shown in FIG. 1 , the semiconductor process chamber further includes a plurality of second fasteners 24 , and the plurality of second fasteners 24 pass through the top flange 211 , and are connected to the adapter The member 102 is used to press the first conductive ring 22 and the second conductive ring 23 tightly. Specifically, the second fasteners 24 are, for example, pins, and a plurality of second fasteners 24 are evenly distributed along the circumference of the connecting sleeve 2, and the second fasteners 24 pass through the top flange 211 and are connected to the adapter. The piece 102 is clamped to press the connecting sleeve 2 onto the adapter piece 102 and the shielding sleeve 11 . Due to the action of multiple second fasteners 24, the top surface of the top flange 211 of the connection sleeve 2 presses the first conductive ring 22 against the bottom surface of the adapter 102, and the top surface of the bottom flange 212 of the connection sleeve 2 The top surface presses the second conductive ring 23 to the bottom surface of the connecting ring 121 of the pressing ring portion 12 . The above design can effectively increase the contact area and conductivity between the connecting sleeve 2 and the shielding assembly 1 , thereby greatly improving the grounding capability of the lower part of the shielding sleeve 11 , thereby reducing the induced potential below the shielding sleeve 11 . It should be noted that the embodiment of the present application does not limit the specific type of the second fastener 24 , for example, the second fastener 24 may also be a bolt. Therefore, the embodiment of the present application is not limited thereto, and those skilled in the art can adjust the setting by themselves according to the actual situation.

In an embodiment of the present application, as shown in FIG. 1 , FIG. 5A and FIG. 5B , the grounding assembly 3 includes a grounding component 31 and a plurality of elastic contacts 32 , wherein the grounding component 31 is disposed under the base 41 and can Lifting and descending with the base 41 ; multiple elastic contact pieces 32 are arranged at intervals along the circumferential direction of the grounding member 31 , preferably evenly arranged. Optionally, a plurality of elastic contacts 32 are located on the top surface of the grounding component 31 near the outer edge. When the base 41 rises to the first position, each elastic contact piece 32 is in elastic contact with the top surface of the grounding component 31 and the bottom surface of the connecting sleeve 2 respectively, and is electrically connected. By means of the elastic contact piece 32 , it can be ensured that the grounding component 31 is in electrical contact with the connecting sleeve 2 , so that the connection stability can be improved.

As shown in Figure 1, Figure 5A and Figure 5B, the grounding component 31 includes a grounding plate 311 and a connecting plate 312, wherein the grounding plate 311 can specifically be made of a metal material into an annular plate structure, and the grounding plate 311 can specifically surround the base 41 The outer circumference of the base 41 can be raised to the first position or lowered to the second position along with the base 41. The inner edge of the grounding plate 311 may be fixedly connected to the outer edge of the connecting plate 312 by bolts, but this embodiment of the present application is not limited thereto, for example, the grounding plate 311 and the connecting plate 312 may adopt an integrated structure. The connecting plate 312 is disposed on the top of the supporting structure 43 , for example, is fixedly connected to the bellows of the supporting structure 43 , but the embodiment of the present application is not limited thereto. The base 41 can be disposed on the top of the connection plate 312 through a “U”-shaped insulator 44 , so as to realize the isolation between the base 41 and the connection plate 312 . Optionally, there is an arc-shaped notch 313 on the left side of the grounding plate 311, and the arc-shaped notch 313 can be set corresponding to the position of the door of the chamber body 100, so as to avoid mechanical interference between the arc-shaped notch 313 and the door, thereby reducing the The failure rate and extended service life of the embodiment of the present application.

Specifically, the elastic contact member 32 may adopt a ring structure made of copper material, so as to improve the conductivity of the grounding component 3 . The specific shape of the elastic contact piece 32 may be an elliptical structure, and a plurality of elastic contact pieces 32 may be evenly distributed along the circumference of the ground plate 311 , and the relatively longer radial direction is tangent to the circumference of the ground plate 311 . The two opposite outer peripheral surfaces of the elastic contact piece 32 are respectively used for elastic contact with the ground plate 311 and the bottom flange 212 of the connecting sleeve 2. The elastic contact piece 32 is arranged on the ground plate 311 by bolts or welding, for example, but this The application examples are not limited thereto. With the above design, the conductive contact area between the ground plate 311 and the connecting sleeve 2 is increased, thereby further reducing the induced potential of the shielding sleeve 11 and the connecting sleeve 2 to further reduce the occurrence of sparking.

It should be noted that the embodiment of the present application does not limit the specific material and shape of the elastic contact member 32 , for example, the elastic contact member 32 adopts other elastic structures with better electrical conductivity. Therefore, the embodiment of the present application is not limited thereto, and those skilled in the art can adjust the setting by themselves according to the actual situation.

In one embodiment of the present application, as shown in Figure 1, Figure 6A to Figure 7, the process chamber further includes an insulating shielding ring 5, the insulating shielding ring 5 is arranged on the grounding member 31, and is arranged around the supporting device 4, and is insulated There is a preset distance between the shielding ring 5 and the surfaces of each of the pressure ring portion 12 , the connection sleeve 2 , the base 41 and the deposition ring 42 facing each other. For example, there is the above-mentioned predetermined distance between the top surface of the insulating shield ring 5 and the bottom surface of the deposition ring 42; there is the above-mentioned predetermined distance between the top surface of the insulating shield ring 5 and the bottom surface of the pressure ring 122 of the pressure ring part 12; There is the above-mentioned predetermined distance between the outer peripheral surface of the ring 5 and the inner end surface of the bottom flange 212 of the connecting sleeve 2; Set spacing. Optionally, the preset distance is less than or equal to 1.5 millimeters. However, the embodiments of the present application are not limited thereto, and those skilled in the art can make adjustments according to actual conditions.

As shown in Fig. 1, Fig. 6A to Fig. 7, the insulating shielding ring 5 adopts a ring structure made of ceramics or quartz. The base 41 is provided. The insulating shielding ring 5 can be used to fill the area surrounded by the shielding sleeve 11, the connecting sleeve 2, the grounding assembly 3 and the base 41, so as to eliminate the possibility of ignition of the process gas, thereby greatly improving the process stability of the embodiment of the present application sex. Further, the insulating shielding ring 5 can isolate the base 41 from the shielding sleeve 11 and the grounding plate 311, preventing the shielding sleeve 11, the grounding plate 311 from being charged with the carrying device 4 and from sparking between each other, so that The embodiment of the present application can be applied to high-pressure process conditions, thereby greatly improving the applicability and scope of application of the embodiment of the present application. Optionally, an escape notch 51 is provided at the top end of the inner surface of the insulating shielding ring 5, and the avoidance notch 51 is set corresponding to the deposition ring 42 of the carrying device 4, so as to avoid mechanical interference between the two, and the avoidance notch 51 is compatible with the deposition ring 42. The preset spacing also needs to be satisfied between the outer peripheral surfaces of the rings 42 .

It should be noted that the embodiment of the present application is not limited to the specific implementation manner of the insulating shielding ring 5 , for example, the insulating shielding ring 5 can be made of other insulating materials, and is arranged on the ground plate 311 by bolts. Therefore, the embodiment of the present application is not limited thereto, and those skilled in the art can adjust the setting by themselves according to the actual situation.

By applying the embodiment of the present application, at least the following beneficial effects can be achieved:

It can be understood that, the above embodiments are only exemplary embodiments adopted for illustrating the principle of the present invention, but the present invention is not limited thereto. For those skilled in the art, various modifications and improvements can be made without departing from the spirit and essence of the present invention, and these modifications and improvements are also regarded as the protection scope of the present invention.

In the description of this application, it is to be understood that the terms "center", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", The orientations or positional relationships indicated by "top", "bottom", "inner", "outer", etc. are based on the orientations or positional relationships shown in the drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying References to devices or elements must have a particular orientation, be constructed, and operate in a particular orientation and therefore should not be construed as limiting the invention.

The terms "first" and "second" are used for descriptive purposes only, and cannot be understood as indicating or implying relative importance or implicitly specifying the quantity of indicated technical features. Thus, a feature defined as "first" and "second" may explicitly or implicitly include one or more of these features. In the description of the present invention, unless otherwise specified, "plurality" means two or more.

In the description of this application, it should be noted that unless otherwise specified and limited, the terms "installation", "connection", and "connection" should be understood in a broad sense, for example, it can be a fixed connection or a detachable connection. Connected, or integrally connected; it can be directly connected, or indirectly connected through an intermediary, and it can be the internal communication of two elements. Those of ordinary skill in the art can understand the specific meanings of the above terms in the present invention in specific situations.

In the description of this specification, specific features, structures, materials or characteristics may be combined in any one or more embodiments or examples in an appropriate manner.

The above descriptions are only some implementations of the present application. It should be pointed out that for those of ordinary skill in the art, some improvements and modifications can be made without departing from the principle of the application. These improvements and modifications are also It should be regarded as the protection scope of this application.

Claims

A semiconductor process chamber, characterized in that it includes: a chamber body, a shielding assembly, a connecting sleeve, a grounding assembly, and a carrying device; wherein the chamber body is grounded;

The carrying device includes a liftable pedestal disposed in the chamber body and a deposition ring disposed around the pedestal;

The shielding assembly includes a shielding sleeve and a pressure ring part, the shielding sleeve and the pressure ring part are fixed and electrically connected; the top of the shielding sleeve is fixed and electrically connected to the chamber body, and the pressure ring part is fixed and electrically connected. The ring part is arranged around the deposition ring and is in conductive contact with the deposition ring when the base is raised to the first position where the process is performed;

The connection sleeve is arranged around the shielding sleeve and the chamber body, and the top of the connection sleeve is fixed to the chamber body and electrically connected, and the bottom of the connection sleeve is connected to the chamber body. The bottom of the shielding sleeve is conductively connected;

The grounding component is disposed under the base, and when the base is raised to the first position, the grounding component is in conductive contact with the bottom of the connecting sleeve.
The semiconductor process chamber according to claim 1, wherein the chamber body comprises a first split body and an adapter disposed above the first split body; the outer peripheral surface of the shielding sleeve, And an outer flange is provided near the top of the shielding sleeve, the bottom surface of the outer flange is superimposed on the top surface of the adapter, and the outer flange is fixedly connected to the adapter.
The semiconductor process chamber according to claim 2, wherein the shielding assembly further comprises a plurality of first fasteners, and the plurality of first fasteners are passed through the outer flange and connected to the outer flange. The adapter is connected to press the shielding sleeve on the top surface of the adapter.
The semiconductor process chamber according to claim 2, wherein a top flange is provided on the top of the outer peripheral surface of the connecting sleeve, and the top surface of the top flange abuts against the bottom surface of the adapter above, and the top flange is fixedly connected with the adapter; the bottom end of the inner peripheral surface of the connection sleeve is provided with a bottom flange, and the top surface of the bottom flange is connected to the pressure ring part. The bottoms are offset.
The semiconductor process chamber according to claim 4, wherein the semiconductor process chamber further comprises a first conductive ring and a second conductive ring, and the first conductive ring is arranged on the top surface of the top flange Between the bottom surface of the adapter piece, the second conductive ring is disposed between the top surface of the bottom flange and the bottom surface of the pressure ring part.
The semiconductor process chamber according to claim 5, wherein the top flange is provided with a first limiting groove for limiting the first conductive ring; the bottom flange is provided with a first Two limiting grooves are used for limiting the second conductive ring.
The semiconductor process chamber according to claim 5, wherein the semiconductor process chamber further comprises a plurality of second fasteners, and a plurality of the second fasteners pass through the top flange, And connected with the adapter, used for pressing the first conductive ring and the second conductive ring.
The semiconductor process chamber according to claim 1, wherein the grounding assembly includes a grounding component and a plurality of elastic contacts, wherein the grounding component is disposed under the base, and can follow the base Seat lifting; a plurality of the elastic contacts are arranged at intervals along the circumferential direction of the grounding component, and each of the elastic contacts is respectively connected to the grounding component when the base is raised to the first position. The top surface is in elastic contact with the bottom surface of the connecting sleeve and is electrically connected.
The semiconductor process chamber according to claim 8, wherein the process chamber further comprises an insulating shielding ring, the insulating shielding ring is disposed on the ground member and surrounds the base, the There is a preset distance between the insulation shielding ring and the opposing surfaces of each of the pressure ring portion, the connection sleeve, the base and the deposition ring.
The semiconductor process chamber according to claim 9, wherein the preset distance is less than or equal to 1.5 millimeters.