WO2022267710A1 - Ensemble résonateur acoustique en volume, procédé de fabrication et dispositif de communication - Google Patents

Ensemble résonateur acoustique en volume, procédé de fabrication et dispositif de communication Download PDF

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Publication number
WO2022267710A1
WO2022267710A1 PCT/CN2022/091455 CN2022091455W WO2022267710A1 WO 2022267710 A1 WO2022267710 A1 WO 2022267710A1 CN 2022091455 W CN2022091455 W CN 2022091455W WO 2022267710 A1 WO2022267710 A1 WO 2022267710A1
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Prior art keywords
substrate
resonant
electrode
unit
acoustic wave
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PCT/CN2022/091455
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English (en)
Chinese (zh)
Inventor
丁焱昆
杨清华
唐兆云
赖志国
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苏州汉天下电子有限公司
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Priority claimed from CN202110694766.4A external-priority patent/CN113258900B/zh
Priority claimed from CN202110926424.0A external-priority patent/CN113659953B/zh
Application filed by 苏州汉天下电子有限公司 filed Critical 苏州汉天下电子有限公司
Publication of WO2022267710A1 publication Critical patent/WO2022267710A1/fr

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details

Definitions

  • the invention relates to the technical field of semiconductors, in particular to a bulk acoustic wave resonator component, a preparation method and a communication device.
  • Film Bulk Acoustic Resonator also known as Bulk Acoustic Wave resonator (Bulk Acoustic Wave)
  • Bulk Acoustic Wave resonator has the characteristics of small size, high operating frequency, low power consumption, high quality factor, and compatibility with CMOS technology. Important devices in the field of radio frequency communications are widely used.
  • the existing cavity-type bulk acoustic wave resonator assembly includes a substrate and at least one resonant unit, the surface of the substrate is provided with a built-in cavity structure for reflecting the bulk acoustic wave back to the resonant unit, and the resonant unit includes a first electrode, a piezoelectric layer and The second electrode, the first electrode, the piezoelectric layer and the second electrode are stacked on the surface of the substrate to form a resonant unit.
  • the size of the bulk acoustic wave resonator component and the communication device composed of the bulk acoustic wave resonator component in the direction perpendicular to the thickness of the substrate is too large, which is not conducive to forming a miniaturized and highly integrated Bulk acoustic wave resonator components and communication devices, and the built-in cavity structure set on the surface of the substrate or the built-in cavity structure sound reflection structure set on the surface of the substrate is relatively large in size perpendicular to the thickness direction of the substrate, which reduces the firmness of the bulk acoustic wave resonator component .
  • embodiments of the present invention provide a bulk acoustic wave resonator component, a preparation method and a communication device, on the basis of improving the firmness of the device, to reduce the thickness of the bulk acoustic wave resonator component and the communication device in a direction perpendicular to the thickness of the substrate. size of.
  • the first aspect of the present application relates to a bulk acoustic wave resonator assembly, comprising:
  • At least one resonant unit the resonant unit is located on the surface of the substrate, the size of the resonant unit in the thickness direction perpendicular to the substrate is smaller than the size of the resonant unit in the thickness direction parallel to the substrate;
  • the resonance unit includes a stacked structure of a first electrode, a piezoelectric layer and a second electrode.
  • At least one acoustic reflection structure is provided on the surface or inside of the substrate; and, the projection of the resonance unit on the substrate at least partially coincides with the projection of the acoustic reflection structure on the substrate, and the acoustic
  • the reflective structure is used to prevent the shear wave of the resonance unit from leaking to the substrate.
  • the acoustic reflection structure includes any one of a cavity structure, a Bragg reflection layer, and a backside through hole.
  • the size of the acoustic reflection structure is greater than or equal to 0.2 microns and less than or equal to 3 microns.
  • the number of the substrates is p, wherein, in the thickness direction parallel to the substrate, the p substrates are arranged in parallel and at intervals, and the value of p includes an integer greater than or equal to 1;
  • the first surface of the r-th substrate and/or the second surface opposite to the first surface are provided with Qr resonant units, and the value of r includes those greater than or equal to 1 and less than or equal to p An integer, the value of the Q r includes an integer greater than or equal to 1;
  • the bulk acoustic wave resonator assembly further includes a conductive interconnection structure and a carrier plate, the carrier plate is located on the first surface side of the p-th substrate, and the conductive interconnection structure is used to connect the electrical signal of the resonant unit to Leading out to the surface of the carrier plate away from the pth substrate, and/or, the conductive interconnection structure is used to lead out the electrical signal of the resonant unit to the second surface side of the first substrate.
  • the height of the resonance unit is smaller than the distance between adjacent substrates, or the height of the resonance unit is smaller than the distance between the p-th substrate and the carrier.
  • the k1-th resonant unit and the k2-th resonant unit are arranged adjacent to each other, and the value of k1 includes greater than or equal to 1 and less than An integer of Q r , the value of k2 includes an integer greater than or equal to 1 and less than Q r ;
  • the k1th resonant unit is arranged adjacent to the electrode with the same name of the k2th resonant unit; and/or, the k1th resonant unit is arranged adjacent to the electrode with the same name as the k2th resonant unit.
  • first horizontal connection part is connected to the first electrode, and forms an L shape with the first electrode
  • second horizontal connection part connected to the second electrode, and form an L-shape with the second electrode
  • the piezoelectric layer is located between the first electrode and the second electrode.
  • the k1-th resonant unit when the k1-th resonant unit is adjacent to the electrode with the same name as the k2-th resonant unit, the k1-th resonant unit and the k2-th resonant unit
  • the electrodes with the same name of each resonant unit are connected as U-shaped electrodes, or, the electrodes with the same name of the k1th resonant unit and the k2th resonant unit are electrically connected through the conductive interconnection structure.
  • the value of k3 includes greater than or equal to 1, and an integer less than or equal to Qr
  • the value of k4 includes an integer greater than or equal to 1, and less than or equal to Qr ;
  • the k3th resonant unit is electrically connected to the electrode with the same name as the k4th resonant unit through the conductive interconnection structure;
  • the electrodes of the k3th resonant unit and the k4th resonant unit with different names are electrically connected through the conductive interconnection structure.
  • the dangling electrodes of the m-th resonant unit are connected to the conductive interconnection structure;
  • the suspended electrode of the mth resonance unit includes a first electrode, and the second electrode of the mth resonance unit is electrically connected to the electrode with the same name or the electrode with a different name of the nth resonance unit;
  • the suspended electrode of the mth resonant unit includes a second electrode, and the first electrode of the mth resonant unit is electrically connected to the same-named electrode or the different-named electrode of the n-th resonant unit, wherein the The value of m includes an integer greater than or equal to 1 and less than or equal to Q r , the value of n includes an integer greater than or equal to 1 and less than or equal to Q r , and the value of m and n The values are different.
  • connection relationship of the resonant units on the same surface of the rth substrate includes series connection and/or parallel connection.
  • the resonant unit on the second surface of the t-th substrate and the resonant unit on the first surface of the t-1-th substrate are interdigitated, wherein the value of t includes An integer greater than or equal to 2 and less than or equal to p.
  • different resonant units are separated by a first preset distance.
  • the second aspect of the present application provides a method for preparing a bulk acoustic wave resonator component, including:
  • At least one resonant unit is formed on the surface of the substrate, and the dimension of the resonant unit in the direction perpendicular to the thickness of the substrate is smaller than the dimension of the resonant unit in the direction parallel to the thickness of the substrate.
  • At least one acoustic reflection structure is provided on the surface or inside of the substrate;
  • a projection of the resonance unit on the substrate at least partially coincides with a projection of the acoustic reflection structure on the substrate, and the acoustic reflection structure is used to prevent the shear wave of the resonance unit from leaking to the substrate.
  • the number of the substrates is p, wherein, in the thickness direction parallel to the substrate, the p substrates are arranged in parallel and at intervals, and the value of p includes an integer greater than or equal to 1;
  • the step of forming at least one resonant unit on the surface of the substrate includes: forming Q r resonant units on the first surface of the r-th substrate and/or the second surface opposite to the first surface, the The value of r includes an integer greater than or equal to 1 and less than or equal to p, and the value of Q r includes an integer greater than or equal to 1;
  • a conductive interconnection structure and a carrier plate are formed on the first surface side of the pth substrate, wherein the conductive interconnection structure is used to lead out the electrical signal of the resonant unit to the carrier plate away from the pth substrate.
  • the surface of the substrate, and/or, the conductive interconnection structure is used to lead out the electrical signal of the resonant unit to the second surface side of the first substrate.
  • forming at least one resonance unit on the surface of the substrate includes:
  • At least one second electrode is formed on the surface of the substrate, wherein, in a direction perpendicular to the thickness of the substrate, the resonance unit includes a stacked structure of a first electrode, a piezoelectric layer and a second electrode.
  • the third aspect of the present application provides a communication device, including the bulk acoustic wave resonator assembly described in any one of the first aspect or the second aspect;
  • the communication device includes at least one of a filter, a duplexer and a multiplexer.
  • the size of at least one resonant unit in the direction perpendicular to the thickness of the substrate is smaller than the size of the resonant unit in the direction parallel to the thickness of the substrate, which reduces the thickness of the bulk acoustic wave resonator component perpendicular to the substrate
  • the size of the direction is conducive to the formation of miniaturized and highly integrated bulk acoustic wave resonator components and communication devices composed of bulk acoustic wave resonator components, and because the size of the resonance unit in the direction perpendicular to the thickness of the substrate is smaller than that of the resonance unit in parallel Due to the size in the thickness direction of the substrate, the bulk acoustic wave of the resonator unit is mainly reflected back and forth in the direction perpendicular to the thickness of the substrate, and there is no need to set up an acoustic wave reflection structure parallel to the thickness direction of the substrate, which increases the firmness of the bulk acoustic wave resonator component
  • the structure of the bulk acoustic wave resonator assembly is simplified, thereby simplifying the preparation method of the bulk acoustic wave resonator assembly, and reducing the manufacturing cost of the bulk acoustic wave resonator assembly.
  • the gap between the resonance unit and the resonance unit can realize the effect of reflecting the longitudinal wave back to the resonance unit and preventing the leakage of the longitudinal wave.
  • the projection of the acoustic reflection structure on the substrate and the projection of the resonance unit on the substrate are at least partially overlapped, and the acoustic reflection structure is used to prevent the shear wave in the resonance unit from leaking to the substrate, thereby reducing the loss of sound waves.
  • the size of the acoustic reflection structure needs to match the resonant unit.
  • the size of the acoustic reflection structure in the direction perpendicular to the thickness of the substrate is in a smaller range, further Improved robustness of BAW resonator components.
  • FIG. 1 is a schematic structural diagram of a bulk acoustic wave resonator assembly in the prior art
  • Fig. 2 is a schematic structural diagram of a bulk acoustic wave resonator assembly provided by an embodiment of the present invention
  • Fig. 3 is a schematic structural diagram of another bulk acoustic wave resonator assembly provided by an embodiment of the present invention.
  • FIG. 4 is a schematic structural diagram of another bulk acoustic wave resonator assembly provided by an embodiment of the present invention.
  • FIG. 5 is a schematic top view of another bulk acoustic wave resonator assembly provided by an embodiment of the present invention.
  • Fig. 6 is a schematic cross-sectional structure diagram of the A1-A2 direction of the bulk acoustic wave resonator assembly shown in Fig. 5;
  • FIG. 7 is a topological diagram of the bulk acoustic wave resonator assembly shown in FIG. 5;
  • Fig. 8 is a schematic top view of the structure of another bulk acoustic wave resonator assembly provided by an embodiment of the present invention.
  • Fig. 9 is a schematic cross-sectional structure diagram of the B1-B2 direction of the bulk acoustic wave resonator assembly shown in Fig. 8;
  • FIG. 10 is a topological diagram of the BAW resonator assembly shown in FIG. 8;
  • Fig. 11 is a schematic structural diagram of another bulk acoustic wave resonator assembly provided by an embodiment of the present invention.
  • Fig. 12 is a topological diagram of the bulk acoustic wave resonator assembly shown in Fig. 11;
  • Fig. 13 shows a schematic flow chart of a method for preparing a bulk acoustic wave resonator assembly
  • FIGS. 14-15 are schematic cross-sectional structural diagrams corresponding to each step of a method for preparing a bulk acoustic wave resonator assembly provided by an embodiment of the present invention.
  • FIG. 16 is a schematic flow diagram of step 120 in FIG. 13;
  • 17-18 are schematic cross-sectional structure diagrams corresponding to each step of the preparation method included in step 120;
  • Fig. 19 is a schematic structural diagram of a bulk acoustic wave resonator assembly provided by an embodiment of the present invention.
  • Fig. 20 is a schematic structural diagram of another bulk acoustic wave resonator assembly provided by an embodiment of the present invention.
  • Fig. 21 is a schematic structural diagram of another bulk acoustic wave resonator assembly provided by an embodiment of the present invention.
  • Fig. 22 is a schematic structural diagram of another bulk acoustic wave resonator assembly provided by an embodiment of the present invention.
  • Fig. 23 is a schematic structural diagram of another bulk acoustic wave resonator assembly provided by an embodiment of the present invention.
  • Fig. 24 is a schematic cross-sectional structure diagram of the A1-A2 direction of the bulk acoustic wave resonator assembly shown in Fig. 7;
  • Fig. 25 is a schematic cross-sectional structure diagram of the B1-B2 direction of the bulk acoustic wave resonator assembly shown in Fig. 10;
  • Fig. 26 is a schematic structural diagram of another bulk acoustic wave resonator assembly provided by an embodiment of the present invention.
  • Fig. 27 shows a schematic flow chart of a method for preparing a BAW resonator assembly
  • 28-31 are schematic cross-sectional structural diagrams corresponding to each step of a method for preparing a bulk acoustic wave resonator assembly provided by an embodiment of the present invention.
  • 32-34 are schematic cross-sectional structural diagrams corresponding to each step of the preparation method included in step 120.
  • the bulk acoustic wave resonator component and the communication device composed of the bulk acoustic wave resonator component are too large in the direction perpendicular to the thickness of the substrate, which is not conducive to forming a miniaturized and highly integrated bulk acoustic wave resonator component and Communication devices, and the built-in cavity structure provided on the surface of the substrate, and/or the acoustic reflection structure provided on the surface of the substrate has a large size perpendicular to the thickness direction of the substrate, which reduces the firmness of the bulk acoustic wave resonator assembly.
  • FIG. 1 is a schematic structural diagram of a bulk acoustic wave resonator assembly in the prior art. It should be noted that what is shown in FIG. 1 is a cavity-type BAW resonator assembly.
  • the BAW resonator assembly includes a substrate 10 and at least one resonant unit 20 , the surface of the substrate 10 is provided with a built-in cavity structure 101 , and the resonant unit 20 includes a first electrode 21 , a piezoelectric layer 22 and a second electrode 23 .
  • the size of the resonance unit 20 perpendicular to the thickness direction (X direction) of the substrate 10 is larger than the size parallel to the thickness direction (Y direction) of the substrate 10.
  • the bulk acoustic wave resonator assembly and The size of the communication device composed of bulk acoustic wave resonator components perpendicular to the thickness direction of the substrate 10 is too large, which is not conducive to the formation of miniaturized and highly integrated bulk acoustic wave resonator components and communication devices, and the built-in cavity provided on the surface of the substrate 10 Structure 101 reduces the robustness of the BAW resonator assembly.
  • Fig. 2 is a schematic structural diagram of a bulk acoustic wave resonator assembly provided by an embodiment of the present invention.
  • this BAW resonator assembly comprises: substrate 10; At least one resonant unit 20, resonant unit 20 is positioned at the surface of substrate 10, and the size of resonant unit 20 on the thickness direction perpendicular to substrate 10 is smaller than resonant unit 20 in parallel Dimensions in the thickness direction of the substrate 10.
  • the size of at least one resonant unit 20 in the thickness direction (X direction) perpendicular to the substrate 10 is smaller than the size of the resonant unit 20 in the thickness direction (Y direction) parallel to the substrate 10, reducing
  • the dimension of the bulk acoustic wave resonator assembly in the thickness direction (X direction) perpendicular to the substrate 10 is beneficial to form a miniaturized and highly integrated bulk acoustic wave resonator assembly and a communication device composed of the bulk acoustic wave resonator assembly.
  • the bulk acoustic wave of the resonance unit 20 is mainly in the thickness direction (X direction) perpendicular to the substrate 10 ), there is no need to set up an acoustic wave reflection structure parallel to the thickness direction (Y direction) of the substrate 10, which increases the firmness of the bulk acoustic wave resonator assembly, simplifies the structure of the bulk acoustic wave resonator assembly, and further simplifies the bulk acoustic wave resonance.
  • the preparation method of the resonator assembly reduces the manufacturing cost of the bulk acoustic wave resonator assembly.
  • Fig. 3 is a schematic structural diagram of another BAW resonator assembly provided by an embodiment of the present invention.
  • the resonance unit 20 includes a stack of a first electrode 21, a piezoelectric layer 22 and a second electrode 23. layer structure.
  • the piezoelectric layer 22 will be deformed, which is manifested as phonon vibration microscopically, Macroscopically, an acoustic wave reflected back and forth between the first electrode 21 and the second electrode 23 is formed, and this acoustic wave is a bulk acoustic wave inside the piezoelectric layer 22 .
  • the built-in cavity structure 101 is used to reflect the bulk acoustic wave back to the resonance unit 20, thereby reducing the loss of the bulk acoustic wave.
  • the area where the piezoelectric layer 22 overlaps with the built-in cavity structure 101 is used as the area where the piezoelectric layer 22 deforms, limited by the position of the built-in cavity structure 101, the size of the resonant unit perpendicular to the thickness direction (X direction) of the substrate 10 is larger than Dimensions parallel to the thickness direction (Y direction) of the substrate 10, when the surface of the substrate 10 is provided with at least one resonant unit 20, the bulk acoustic wave resonator assembly and the communication device composed of the bulk acoustic wave resonator assembly are perpendicular to the thickness direction of the substrate 10
  • the size (in the X direction) is too large, which is not conducive to forming miniaturized and highly integrated BAW resonator components and communication devices.
  • the resonant unit 20 is vertically arranged on the surface of the substrate 10, specifically, in the thickness direction (X direction) perpendicular to the substrate 10, the resonant unit 20 includes a first A laminated structure of the electrode 21, the piezoelectric layer 22 and the second electrode 23.
  • the working principle of the resonance unit 20 in this embodiment is as follows: under the action of the alternating electric field of the first electrode 21 and the second electrode 23, the piezoelectric layer 22 will be deformed, which is manifested as phonon vibration microscopically, and formed in the macroscopic
  • the sound waves reflected back and forth between the first electrode 21 and the second electrode 23 are bulk acoustic waves inside the piezoelectric layer 22 .
  • the area of the resonance unit 20 can be increased by increasing the height H of the resonance unit 20 and/or the size of the resonance unit 20 on a plane perpendicular to the X axis and the Y axis, thereby enhancing the strength of the bulk acoustic wave signal generated by the resonance unit.
  • the resonant unit 20 is vertically arranged on the surface of the substrate 10, and the size of the resonant unit 20 perpendicular to the thickness direction of the substrate 10 (X direction) is smaller than that parallel to the thickness direction of the substrate 10 (Y direction).
  • the size of the bulk acoustic wave resonator assembly reduces the size of the bulk acoustic wave resonator assembly in the direction perpendicular to the thickness of the substrate 10 (X direction), which is conducive to forming a miniaturized and highly integrated bulk acoustic wave resonator assembly and communication devices.
  • the resonance unit 20 includes a stacked structure of the first electrode 21, the piezoelectric layer 22 and the second electrode 23, so that the reflection of the bulk acoustic wave generated by the piezoelectric layer 22
  • the direction is parallel to the X direction, and there is no need to arrange an acoustic wave reflection structure parallel to the thickness direction (Y direction) of the substrate 10, which increases the firmness of the bulk acoustic wave resonator assembly, simplifies the structure of the bulk acoustic wave resonator assembly, and further simplifies the bulk acoustic wave resonator assembly.
  • the preparation method of the resonator assembly reduces the manufacturing cost of the bulk acoustic wave resonator assembly.
  • embodiments of the present invention also provide the following technical solutions:
  • FIG. 4 is a schematic structural diagram of another bulk acoustic wave resonator assembly provided by an embodiment of the present invention.
  • FIG. 5 is a schematic top view of another bulk acoustic wave resonator assembly provided by an embodiment of the present invention.
  • FIG. 6 is a schematic cross-sectional structure diagram of the BAW resonator assembly shown in FIG. 5 along the direction A1-A2.
  • FIG. 7 is a topological diagram of the BAW resonator assembly shown in FIG. 5 .
  • Fig. 8 is a schematic top view of the structure of another bulk acoustic wave resonator assembly provided by an embodiment of the present invention.
  • FIG. 8 is a schematic top view of the structure of another bulk acoustic wave resonator assembly provided by an embodiment of the present invention.
  • FIG. 9 is a schematic cross-sectional structure diagram of the B1-B2 direction of the bulk acoustic wave resonator assembly shown in FIG. 8 .
  • FIG. 10 is a topological diagram of the BAW resonator assembly shown in FIG. 8 .
  • Fig. 11 is a schematic structural diagram of another bulk acoustic wave resonator assembly provided by an embodiment of the present invention.
  • FIG. 12 is a topological diagram of the BAW resonator assembly shown in FIG. 11 . Taking Fig. 4, Fig. 6, Fig. 9 and Fig.
  • the number of substrates 10 is p, wherein, in the thickness direction parallel to the substrate 10, the p substrates 10 are parallel And set at intervals, the value of p includes an integer greater than or equal to 1; the first surface 10A of the rth substrate 10 and/or the second surface 10B opposite to the first surface 10A are provided with Q r resonant units 20, r
  • the value of r includes an integer greater than or equal to 1 and less than or equal to p, and the value of Q r includes an integer greater than or equal to 1;
  • the bulk acoustic wave resonator assembly also includes a conductive interconnection structure 30 and a carrier plate 40, the carrier plate 40 Located on the side of the first surface 10A of the p-th substrate 10, the conductive interconnection structure 30 is used to lead out the electrical signal of the resonant unit 20 to the surface of the carrier plate 40 away from the p-th substrate 10, and/or the conductive interconnection structure 30 It is used to
  • the carrier 40 and the substrate 10 can be made of the same material or different materials.
  • the conductive interconnection structure 30 includes: at least one of a conductive via 31 , a conductive bonding layer 32 , a pad (PAD) 33 and a redistribution layer 34 See FIG. 11 , the conductive vias 31 in the substrate 10 are used to transmit electrical signals from the first surface 10A of the substrate 10 to the second surface 10B. Referring to FIGS. 4 , 6 , 9 and 11 , the conductive vias 31 in the carrier 40 are used to transfer electrical signals from the surface adjacent to the substrate 10 to the surface away from the substrate 10 .
  • the conductive bonding layer 32 is located between two adjacent substrates 10 , and between the substrates 10 and the carrier 40 , for fixing the two adjacent substrates 10 and the substrate 10 and the carrier 40 . Moreover, the projection of the conductive bonding layer 32 on the substrate 10 covers part or all of the conductive vias 31 , and the projection of the conductive bonding layer 32 on the carrier 40 covers part or all of the conductive vias 31 .
  • the resonance unit 20 is located in the closed space enclosed by the conductive bonding layer 32 , two adjacent substrates 10 , and the substrate 10 and the carrier 40 .
  • the pad (PAD) 33 is located on the first surface 10A and/or the second surface 10B of the rth substrate 10, and the projection of the pad (PAD) 33 on the substrate 10 covers part or all of the conductive via 31; the rewiring layer 34 Located on the surface of the carrier 40 away from the substrate 10 , the projection of the redistribution layer 34 on the p-th substrate 10 covers part or all of the conductive vias 31 provided in the p-th substrate 10 .
  • the conductive interconnection structure 30 is used to lead out the electrical signal of the resonant unit 20 to the surface of the carrier 40 away from the p-th substrate 10 .
  • this embodiment also includes the following technical solution: a conductive through hole 31 can be provided inside the first substrate 10, The redistribution layer 34 is provided on the second surface, so that the conductive interconnection structure 30 is used to lead out the electrical signal of the resonant unit 20 to the second surface 10B side of the first substrate 10 .
  • the conductive interconnection structure 30 is used to lead out the electrical signal of the resonance unit 20 to the surface of the carrier 40 away from the p-th substrate 10 , and/or the conductive interconnection structure 30 is used to lead out the electrical signal of the resonance unit 20 To the second surface 10B side of the first substrate 10 , it is convenient to electrically connect the electrical signal of the BAW resonator component with a compensation circuit composed of at least one of capacitance, inductance, resistance and functional chips.
  • the conductive bonding layer 32 is used for bonding different substrates 10 and the substrate 10 and the carrier 40, and the edges of the substrate 10 and the carrier 40 are provided with a closed conductive bonding layer 32 for forming the conductive bonding layer 32 , two adjacent substrates 10 and a closed space surrounded by the substrates 10 and the carrier 40 .
  • the enclosed space is a vacuum enclosed space. The vacuum enclosed space is used to reflect the bulk acoustic wave back to the resonance unit 20, thereby reducing the loss of the bulk acoustic wave.
  • the value of p is 1.
  • Two resonance units 20 are provided on the first surface 10A of the substrate 10 in a thickness direction (Y direction) parallel to the substrate 10 .
  • the conductive interconnection structure 30 is located on the surface and/or inside the substrate 10 and the carrier plate 40, and each resonant unit 20 is electrically connected to the conductive interconnection structure 30, and the conductive interconnection structure 30 is used to lead out the electrical signal of the resonant unit 20 to The carrier 40 faces away from the surface of the first substrate 10 .
  • the value of p is 1.
  • the first surface 10A of the substrate 10 is provided with 4 resonant units 20.
  • the 4 resonant units 20 are divided into 2 groups, and each group contains 2 resonant units connected in series.
  • the unit 20 and the conductive interconnection structure 30 respectively lead out the electrical signals of the two groups of resonant units 20 to the surface of the carrier 40 away from the first substrate 10 .
  • the value of p is 1.
  • the first surface 10A of the substrate 10 is provided with three resonant units 20.
  • the three resonant units 20 are connected in series.
  • the conductive interconnection structures 30 lead out the electrical signals of the three series-connected resonant units 20 to the surface of the carrier plate 40 away from the first substrate 10 .
  • the value of p is 2.
  • the carrier plate 40 is arranged parallel to and spaced from the second substrate 10 .
  • Three resonance units 20 are provided on the first surface 10A of the first substrate 10 .
  • Two resonance units 20 are provided on the first surface 10A of the second substrate 10 .
  • Two resonance units 20 are provided on the second surface 10B of the second substrate 10 .
  • the conductive interconnection structure 30 is located on the surface and/or inside the substrate 10 and the carrier 40 , and the conductive interconnection structure 30 is used to lead out the electrical signal of the resonant unit 20 to the surface of the carrier 40 away from the second substrate 10 .
  • p in this embodiment is not limited to 1 or 2, and the value of p may be an integer greater than or equal to 1.
  • the conductive interconnection structure 30 is located on the surface and/or inside of the substrate 10 and the carrier 40 , and the resonant units 20 can be electrically connected to the conductive interconnection structure 30 after being connected in series.
  • the conductive interconnection structure 30 is used to lead out the electrical signal of the resonant unit 20 to the surface of the carrier 40 away from the p-th substrate 10 .
  • the connection mode between the resonance units 20 can be specifically set according to actual conditions.
  • the bulk acoustic wave resonator assembly provided in this embodiment includes a carrier plate 40 , a conductive interconnection structure 30 and p substrates 10 arranged in parallel and spaced apart, and the value of p includes an integer greater than or equal to 1.
  • the first surface 10A of the r -th substrate 10 and/or the second surface 10B opposite to the first surface 10A are provided with Qr resonant units 20, and the conductive interconnection structure 30 is used to extract the electrical signals of the resonant units 20 to the carrier.
  • the plate 40 faces away from the surface of the p-th substrate 10 .
  • the above technical solution reduces the size of the bulk acoustic wave resonator component in the thickness direction (X direction) perpendicular to the substrate 10, which is conducive to the formation of a miniaturized and highly integrated bulk acoustic wave resonator component and a bulk acoustic wave resonator component.
  • the number of vertically arranged resonant units 20 that can be stacked parallel to the thickness direction (Y direction) of the substrate 10 is increased, further improving the integration of the bulk acoustic wave resonator assembly and the communication device.
  • the conductive interconnection structure 30 is used to lead out the electrical signal of the resonant unit 20 to the surface of the carrier plate 40 away from the p-th substrate 10, and/or the conductive interconnection structure 30 is used to lead out the electrical signal of the resonant unit 20 to
  • the side of the second surface 10B of the first substrate 10 is convenient for electrically connecting the electrical signal of the bulk acoustic wave resonator component with a compensation circuit composed of at least one of capacitance, inductance, resistance and functional chips.
  • the most basic structure of a bulk acoustic wave resonator is a sandwich structure composed of two electrodes sandwiching a piezoelectric layer 22. Under the action of the alternating electric field of the first electrode 21 and the second electrode 23, the piezoelectric layer 22 Deformation will occur, microscopically manifested as phonon vibration, and macroscopically formed as sound waves vibrating in the piezoelectric layer 22 .
  • the sound waves vibrate in the piezoelectric layer 22 to form standing waves, mainly in the form of longitudinal waves, but there may still be a small amount of transverse waves.
  • the movement direction of particles is parallel to the direction of propagation of sound waves, but each particle does not move along the direction of sound waves, but vibrates back and forth in its own equilibrium state.
  • transverse waves the direction of motion of the particles and the direction of propagation of the sound wave are perpendicular to each other. The particles also don't move in the direction of sound waves, they just vibrate up and down in their respective equilibrium states.
  • the longitudinal wave in the acoustic wave of the resonance unit 20 in the prior art mainly propagates in the direction parallel to the thickness of the substrate 10 , so the acoustic reflection structure in the prior art is to prevent the longitudinal wave from leaking to the substrate 10 .
  • the acoustic reflection structure in FIG. 1 is a cavity structure 101 .
  • the size of the BAW resonator assembly and the communication device composed of the BAW resonator assembly is relatively large in the direction perpendicular to the thickness of the substrate 10.
  • the cavity structure 101 is used as an acoustic reflection structure, and its size needs to match the resonant unit 20.
  • the dimension of the cavity structure 101 perpendicular to the thickness direction of the substrate 10 is also relatively large, resulting in the built-in cavity structure 101 disposed on the surface of the substrate 10 reducing the firmness of the BAW resonator assembly.
  • Fig. 19 is a schematic structural diagram of a bulk acoustic wave resonator assembly provided by an embodiment of the present invention.
  • Fig. 20 is a schematic structural diagram of another bulk acoustic wave resonator assembly provided by an embodiment of the present invention.
  • Fig. 21 is a schematic structural diagram of another BAW resonator assembly provided by an embodiment of the present invention.
  • the bulk acoustic wave resonator assembly includes: a substrate 10, at least one acoustic reflection structure 102 is arranged on the surface or inside of the substrate 10; at least one resonant unit 20, the resonant unit 20 is located on the surface of the substrate 10, and the resonant unit
  • the size of 20 in the thickness direction perpendicular to the substrate 10 is smaller than the size of the resonant unit 20 in the thickness direction parallel to the substrate 10, and the projection of the resonant unit 20 on the substrate 10 and the projection of the acoustic reflection structure 102 on the substrate 10 at least partially overlap,
  • the acoustic reflection structure 102 is used to prevent the shear wave in the resonance unit 20 from leaking to the substrate 10 .
  • FIGS. 19 to 21 show a technical solution in which the projection of the resonance unit 20 on the substrate 10 and the projection of the acoustic reflection structure 102 on the substrate 10 completely coincide.
  • the embodiment of the present invention also includes a technical solution in which the projection of the resonance unit 20 on the substrate 10 overlaps with the projection of the acoustic reflection structure 102 on the substrate 10 .
  • the direction perpendicular to the thickness of the substrate 10 is defined as the X direction
  • the direction parallel to the thickness of the substrate 10 is defined as the Y direction.
  • the size of the resonance unit 20 in the thickness direction perpendicular to the substrate 10 is smaller than the size of the resonance unit 20 in the thickness direction parallel to the substrate 10, and the longitudinal wave in the acoustic wave of the resonance unit 20 mainly propagates in the thickness direction perpendicular to the substrate 10.
  • the transverse wave in the acoustic wave of the resonance unit 20 mainly propagates in a direction parallel to the thickness of the substrate 10 .
  • the gap between the resonance unit 20 and the resonance unit 20 can realize the effect of reflecting the longitudinal wave back to the resonance unit 20 and preventing the leakage of the longitudinal wave.
  • the cavity structure 101 can reflect the longitudinal wave back to the resonance unit 20 and prevent the longitudinal wave from leaking. It is known that the leakage of the shear wave of the resonant unit 20 to the substrate 10 will also cause the loss of the sound wave of the resonant unit 20 .
  • At least one acoustic reflection structure 102 is provided on the surface or inside of the substrate 10, the projection of the resonance unit 20 on the substrate 10 and the projection of the acoustic reflection structure 102 on the substrate 10 at least partially overlap, and the acoustic reflection structure 102 is used to prevent The transverse wave in the resonance unit 20 leaks to the substrate 10 .
  • the acoustic reflection structure 102 includes any one of the cavity structure 102a, the Bragg reflection layer 102b, and the backside through hole 102c.
  • the rear through hole 102c may be a tapered through hole or a constant diameter through hole.
  • the cavity structure 102 a is used as the acoustic reflection structure 102 to prevent the acoustic wave in the resonance unit 20 , especially the shear wave, from leaking to the substrate 10 .
  • the rear through hole 102 c used to prevent the acoustic wave in the resonance unit 20 , especially the transverse wave, from leaking to the substrate 10 .
  • this interface impedance mismatch makes the sound waves transmitted to the cavity structure 102a or the rear through hole 102c, especially the transverse waves, almost all reflected back to the resonance unit 20,
  • the energy of the sound wave, especially the transverse wave, leaking out of the resonance unit 20 is extremely small, thereby preventing the sound wave, especially the transverse wave, of the resonance unit 20 from leaking to the substrate 10 .
  • the Bragg reflection layer 102 b is used as the acoustic reflection structure 102 to prevent the acoustic wave in the resonance unit 20 , especially the transverse wave, from leaking to the substrate 10 .
  • the Bragg reflection layer 102b adopts a Bragg reflection layer formed by alternately stacking high and low acoustic impedance layers to prevent the transverse wave of the resonant unit 20 from leaking to the substrate 10.
  • each acoustic impedance layer is greater than 1/4 wavelength, and the greater the acoustic impedance ratio of the high and low acoustic impedance layers, The better the effect of the Bragg reflection layer 102b on preventing the acoustic wave, especially the transverse wave, of the resonance unit 20 from leaking to the substrate 10 is, the better.
  • the bulk acoustic wave resonator component of the acoustic reflection structure 102 with the cavity structure 102a has higher quality factor, smaller loss and electromechanical coupling. features with higher coefficients.
  • the size of at least one resonant unit 20 in the direction perpendicular to the thickness of the substrate 10 is smaller than the size of the resonant unit 20 in the direction parallel to the thickness of the substrate 10, reducing the bulk acoustic wave resonator component in the vertical direction.
  • the dimension in the thickness direction of the substrate 10 is beneficial to form a miniaturized and highly integrated bulk acoustic wave resonator component and a communication device composed of the bulk acoustic wave resonator component.
  • the gap between the resonance unit 20 and the resonance unit 20 can realize the effect of reflecting the longitudinal wave back to the resonance unit 20 and preventing the leakage of the longitudinal wave.
  • the projection of the acoustic reflection structure 102 on the substrate 10 and the projection of the resonant unit 20 on the substrate 10 are at least partially overlapped.
  • the acoustic reflection structure 102 is used to prevent the shear wave in the resonant unit 20 from leaking to the substrate 10 , thereby reducing the loss of sound waves.
  • the size of the acoustic reflection structure 102 needs to match the resonant unit 20, as the size of the bulk acoustic wave resonator component decreases in the direction perpendicular to the thickness of the substrate 10, the size of the acoustic reflection structure 102 in the direction perpendicular to the thickness of the substrate 10 is relatively small. Small range, which in turn improves the firmness of the bulk acoustic wave resonator assembly.
  • the size of the acoustic reflection structure 102 is greater than or equal to 0.2 microns and less than or equal to 3 microns.
  • the size of the acoustic reflection structure 102 is smaller than 0.2 microns, which has a weak effect on preventing the acoustic wave, especially the transverse wave, of the resonance unit 20 from leaking to the substrate 10 .
  • the size of the cavity structure 102a and the backside through hole 102c in the direction perpendicular to the thickness of the substrate 10 is greater than 3 microns, resulting in too much material removed from the substrate 10, resulting in insufficient support strength of the substrate 10, and reducing the firmness of the bulk acoustic wave resonator assembly. sex.
  • the size of the Bragg reflection layer 102b in the direction perpendicular to the thickness of the substrate 10 is greater than 3 microns, and the Bragg reflection layer 102b exerts too much pressure on the substrate 10, causing the substrate 10 to be easily damaged and reducing the firmness of the bulk acoustic wave resonator assembly.
  • the size of the acoustic reflection structure 102 is greater than or equal to 0.2 microns and less than or equal to 3 microns.
  • the bulk acoustic wave resonator assembly can effectively prevent the transverse wave of the resonant unit 20 from leaking to the substrate 10 , and on the other hand, the robustness of the bulk acoustic wave resonator assembly can meet preset requirements.
  • the size of the acoustic reflection structure 102 may be any one of 1.1 microns, 1.2 microns, 1.3 microns or 1.6 microns.
  • the bulk acoustic wave resonator components shown in FIGS. 22-26 , and FIGS. 5 , 7 , 8 , 10 and 12 are introduced by taking the cavity structure 102 a as the acoustic reflection structure 102 as an example.
  • Fig. 22 is a schematic structural diagram of another bulk acoustic wave resonator assembly provided by an embodiment of the present invention.
  • the resonance unit 20 includes a stacked structure of a first electrode 21 , a piezoelectric layer 22 and a second electrode 23 in a direction perpendicular to the thickness of the substrate 10 .
  • the working principle of the resonance unit 20 in this embodiment is as follows: under the action of the alternating electric field of the first electrode 21 and the second electrode 23, the piezoelectric layer 22 will be deformed, which is manifested as phonon vibration microscopically, and forms a macroscopic Sound waves vibrating in the piezoelectric layer 22 .
  • the gap between the resonance unit 20 and the resonance unit 20 can realize the effect of reflecting the longitudinal wave in the sound wave back to the resonance unit 20 and preventing the leakage of the longitudinal wave.
  • the acoustic reflection structure 102 is used to prevent the acoustic wave in the resonance unit 20 , especially the transverse wave, from leaking to the substrate 10 .
  • the area of the resonant unit 20 can be increased by increasing the height H of the resonant unit 20 and/or the size of the resonant unit 20 on a plane perpendicular to the X axis and the Y axis, Further, the intensity of the acoustic wave signal generated by the resonance unit 20 is enhanced.
  • embodiments of the present invention also provide the following technical solutions:
  • FIG. 23 is a schematic structural diagram of another bulk acoustic wave resonator assembly provided by an embodiment of the present invention.
  • FIG. 5 is a schematic top view of another bulk acoustic wave resonator assembly provided by an embodiment of the present invention.
  • FIG. 24 is a schematic cross-sectional structural diagram of the bulk acoustic wave resonator assembly shown in FIG. 5 along the direction A1-A2.
  • FIG. 7 is a topological diagram of the BAW resonator assembly shown in FIG. 5 .
  • Fig. 8 is a schematic top view of the structure of another bulk acoustic wave resonator assembly provided by an embodiment of the present invention.
  • FIG. 25 is a schematic cross-sectional structure diagram of the B1-B2 direction of the bulk acoustic wave resonator assembly shown in FIG. 8 .
  • FIG. 10 is a topological diagram of the BAW resonator assembly shown in FIG. 8 .
  • Fig. 26 is a schematic structural diagram of another bulk acoustic wave resonator assembly provided by an embodiment of the present invention.
  • FIG. 12 is a topological diagram of the BAW resonator assembly shown in FIG. 26 . Taking Fig. 23, Fig. 24, Fig. 25 and Fig.
  • the number of substrates 10 is p, wherein, in the direction parallel to the thickness of the substrates 10, the p substrates 10 are parallel And set at intervals, the value of p includes an integer greater than or equal to 1; the first surface 10A of the rth substrate 10 and/or the second surface 10B opposite to the first surface 10A are provided with Q r resonant units 20, r
  • the value of r includes an integer greater than or equal to 1 and less than or equal to p, and the value of Q r includes an integer greater than or equal to 1;
  • the bulk acoustic wave resonator assembly also includes a conductive interconnection structure 30 and a carrier plate 40, and the carrier plate 40 Located on the side of the first surface 10A of the p-th substrate 10, the conductive interconnection structure 30 is used to lead out the electrical signal of the resonant unit 20 to the surface of the carrier plate 40 away from the p-th substrate 10, and/or the conductive interconnection structure 30 Located on the side of the first surface 10A
  • the carrier 40 and the substrate 10 can be made of the same material or different materials.
  • the conductive interconnection structure 30 includes: at least one of a conductive via 31 , a conductive bonding layer 32 , a pad (PAD) 33 and a redistribution layer 34 See FIG. 26 , the conductive vias 31 in the substrate 10 are used to transmit electrical signals from the first surface 10A of the substrate 10 to the second surface 10B.
  • the conductive vias 31 in the carrier 40 are used to transfer electrical signals from the surface adjacent to the substrate 10 to the surface away from the substrate 10 .
  • the conductive bonding layer 32 is located between two adjacent substrates 10 , and between the substrates 10 and the carrier 40 , for fixing the two adjacent substrates 10 and the substrate 10 and the carrier 40 . Moreover, the projection of the conductive bonding layer 32 on the substrate 10 covers part or all of the conductive vias 31 , and the projection of the conductive bonding layer 32 on the carrier 40 covers part or all of the conductive vias 31 .
  • the resonance unit 20 is located in the closed space enclosed by the conductive bonding layer 32 , two adjacent substrates 10 , and the substrate 10 and the carrier 40 .
  • the pad (PAD) 33 is located on the first surface 10A and/or the second surface 10B of the rth substrate 10, and the projection of the pad (PAD) 33 on the substrate 10 covers part or all of the conductive via 31; the rewiring layer 34 Located on the surface of the carrier 40 away from the substrate 10 , the projection of the redistribution layer 34 on the p-th substrate 10 covers part or all of the conductive vias 31 provided in the p-th substrate 10 .
  • the conductive interconnection structure 30 is used to lead out the electrical signal of the resonant unit 20 to the surface of the carrier 40 away from the p-th substrate 10 .
  • this embodiment also includes the following technical solution: a conductive through hole 31 can be provided inside the first substrate 10, The redistribution layer 34 is provided on the second surface, so that the conductive interconnection structure 30 is used to lead out the electrical signal of the resonant unit 20 to the second surface 10B side of the first substrate 10 .
  • the conductive interconnection structure 30 is used to lead out the electrical signal of the resonance unit 20 to the surface of the carrier 40 away from the p-th substrate 10 , and/or the conductive interconnection structure 30 is used to lead out the electrical signal of the resonance unit 20 To the second surface 10B side of the first substrate 10 , it is convenient to electrically connect the electrical signal of the BAW resonator component with a compensation circuit composed of at least one of capacitance, inductance, resistance and functional chips.
  • the conductive bonding layer 32 is used for bonding different substrates 10 and the substrate 10 and the carrier 40, and the edges of the substrate 10 and the carrier 40 are provided with a closed conductive bonding layer 32 for forming the conductive bonding layer 32 , two adjacent substrates 10 and a closed space surrounded by the substrates 10 and the carrier 40 .
  • the enclosed space is a vacuum enclosed space. The vacuum enclosed space is used to reflect the sound wave back to the resonance unit 20, thereby reducing the loss of the sound wave.
  • the value of p is 1.
  • two resonant units 20 are provided on the first surface 10A of the substrate 10 .
  • the conductive interconnection structure 30 is located on the surface and/or inside the substrate 10 and the carrier plate 40, and each resonant unit 20 is electrically connected to the conductive interconnection structure 30, and the conductive interconnection structure 30 is used to lead out the electrical signal of the resonant unit 20 to The carrier 40 faces away from the surface of the first substrate 10 .
  • the value of p is 1.
  • the first surface 10A of the substrate 10 is provided with 4 resonant units 20.
  • the 4 resonant units 20 are divided into 2 groups, each group contains 2 resonant units 20 connected in series, conductive
  • the interconnection structure 30 respectively leads the electrical signals of the two groups of resonant units 20 to the surface of the carrier 40 away from the first substrate 10 .
  • the value of p is 1.
  • the first surface 10A of the substrate 10 is provided with three resonant units 20 .
  • the three resonant units 20 are connected in series.
  • the conductive interconnection structures 30 lead out the electrical signals of the three series-connected resonant units 20 to the surface of the carrier plate 40 away from the first substrate 10 .
  • the value of p is 2.
  • the two substrates 10 are arranged in parallel and at intervals.
  • the carrier plate 40 is arranged parallel to and spaced from the second substrate 10 .
  • Three resonance units 20 are provided on the first surface 10A of the first substrate 10 .
  • Two resonance units 20 are provided on the first surface 10A of the second substrate 10 .
  • Two resonance units 20 are provided on the second surface 10B of the second substrate 10 .
  • the conductive interconnection structure 30 is located on the surface and/or inside the substrate 10 and the carrier 40 , and the conductive interconnection structure 30 is used to lead out the electrical signal of the resonant unit 20 to the surface of the carrier 40 away from the second substrate 10 .
  • p in this embodiment is not limited to 1 or 2, and the value of p may be an integer greater than or equal to 1.
  • the conductive interconnection structure 30 is located on the surface and/or inside of the substrate 10 and the carrier 40 , and the resonant units 20 can be electrically connected to the conductive interconnection structure 30 after being connected in series.
  • the conductive interconnection structure 30 is used to lead out the electrical signal of the resonant unit 20 to the surface of the carrier 40 away from the p-th substrate 10 .
  • the connection mode between the resonance units 20 can be specifically set according to actual conditions.
  • the bulk acoustic wave resonator assembly provided in this embodiment includes a carrier plate 40 , a conductive interconnection structure 30 and p substrates 10 arranged in parallel and spaced apart, and the value of p includes an integer greater than or equal to 1.
  • the first surface 10A of the r -th substrate 10 and/or the second surface 10B opposite to the first surface 10A are provided with Qr resonant units 20, and the conductive interconnection structure 30 is used to extract the electrical signals of the resonant units 20 to the carrier.
  • the plate 40 faces away from the surface of the p-th substrate 10 .
  • the above technical solution reduces the size of the bulk acoustic wave resonator component in the direction perpendicular to the thickness of the substrate 10, which is conducive to the formation of a miniaturized and highly integrated bulk acoustic wave resonator component and the basis of communication devices composed of bulk acoustic wave resonator components.
  • the number of vertically arranged resonant units 20 that can be stacked parallel to the thickness direction of the substrate 10 is increased, further improving the integration of the bulk acoustic wave resonator assembly and the communication device.
  • the conductive interconnection structure 30 is used to lead out the electrical signal of the resonant unit 20 to the surface of the carrier plate 40 away from the p-th substrate 10, and/or the conductive interconnection structure 30 is used to lead out the electrical signal of the resonant unit 20 to
  • the side of the second surface 10B of the first substrate 10 is convenient for electrically connecting the electrical signal of the bulk acoustic wave resonator component with a compensation circuit composed of at least one of capacitance, inductance, resistance and functional chips.
  • the embodiment of the present invention also provides the following technical solutions:
  • the height of the resonance unit 20 is smaller than the distance between adjacent substrates 10 , or the height of the resonance unit 20 is smaller than the distance between the p-th substrate 10 and the carrier 40 .
  • the height of the resonance unit 20 is smaller than the distance between adjacent substrates 10 .
  • the height of the resonance unit 20 is smaller than the distance between the p-th substrate 10 and the carrier 40 .
  • the above-mentioned technical solution can ensure that there is a first cavity structure 20a between the resonant unit 20 and the substrate 10 or between the resonant unit 20 and the carrier 40, in a direction parallel to the thickness of the substrate 10
  • the size H1 of the first cavity structure 20a between the resonant unit 20 and the substrate 10 is the difference between the distance between the adjacent substrates 10 and the height of the resonant unit 20, and the first cavity structure 20a between the resonant unit 20 and the carrier 40
  • the dimension H1 of a cavity structure 20 a is the difference between the distance between the p-th substrate 10 and the carrier 40 and the height of the resonant unit 20 .
  • the first cavity structure 20 a not only has little loss to the sound wave, especially the transverse wave, but also can reflect the sound wave, especially the transverse wave, back to the resonant unit 20 , thereby improving the performance of the resonant unit 20 .
  • the size H1 of the first cavity structure 20a is greater than or equal to 10 microns. It should be noted that, in the bulk acoustic wave resonator assembly shown in FIG. 4 or FIG. 23 , the value of p is 1, which only shows that the height of the resonant unit 20 is smaller than the distance between the p-th substrate 10 and the carrier 40 Bulk acoustic wave resonator components. In the bulk acoustic wave resonator assembly shown in FIG.
  • the value of p is 2, and it shows that the height of the resonant unit 20 is smaller than the distance between adjacent substrates 10, and the height of the resonant unit 20 is smaller than the pth
  • the distance between the substrate 10 and the carrier plate 40 is the bulk acoustic wave resonator assembly.
  • the k1-th resonant unit 20 and the k2-th resonant unit 20 are arranged adjacently,
  • the value of k1 includes an integer greater than or equal to 1 and less than Qr
  • the value of k2 includes an integer greater than or equal to 1 and less than Qr
  • the k1th resonant unit 20 and the k2th resonant unit 20 have the same name electrode adjacently arranged; and/or, the k1th resonant unit 20 and the k2th resonant unit 20 are arranged adjacently to the electrodes with different names.
  • the k1th resonant unit 20 is adjacent to the electrode with the same name as the k2th resonant unit 20, that is, the k1th resonant unit 20 is adjacent to the first electrode 21 of the k2th resonant unit 20 or the k1th resonant unit 20 is arranged adjacent to the second electrode 23 of the k2 th resonance unit 20 .
  • the k1th resonant unit 20 is arranged adjacent to the electrodes of different names of the k2th resonant unit 20, that is, the first electrode 21 of the k1th resonant unit 20 is adjacent to the second electrode 23 of the k2th resonant unit 20, or The second electrode 23 of the k1 th resonant unit 20 is adjacent to the first electrode 21 of the k2 th resonant unit 20 .
  • the adjacently arranged k1th resonant unit 20 and the k2th resonant unit 20 are adjacently arranged with the electrode of the same name, but In this embodiment, it is not limited whether two adjacent resonant units 20 are adjacently arranged with electrodes of the same name or adjacently arranged with electrodes of different names, and the arrangement of the first electrode 21, the piezoelectric layer 22 and the second electrode 23 in the resonant unit 20 is added. Sequential flexibility.
  • the conductive interconnection structure 30 can be reasonably arranged to realize that the electrical signal of the resonant unit 20 is led out to the The carrier 40 is away from the surface of the p-th substrate 10 , and/or is drawn out to the second surface 10B side of the first substrate 10 .
  • the BAW The resonator assembly also includes a first horizontal connecting portion 21a and a second horizontal connecting portion 23a; the first horizontal connecting portion 21a is connected to the first electrode 21, and forms an L shape with the first electrode 21; the second horizontal connecting portion 23a is connected to the second electrode 23 , and forms an L shape with the second electrode 23 ; in the same resonance unit 20 , the piezoelectric layer 22 is located between the first electrode 21 and the second electrode 23 .
  • the piezoelectric layer 22 is located between the first electrode 21 and the second electrode 23, and the first horizontal connection portion 21a and the second horizontal connection portion 23a are in contact with the adjacent resonant unit 20 to realize electrical connection. connection, or, the first horizontal connection portion 21a and the second horizontal connection portion 23a are directly in contact with the conductive interconnection structure 30 to achieve electrical connection. Taking FIG. 4 or FIG.
  • the arrangement of the first horizontal connecting portion 21a and the second horizontal connecting portion 23a makes the resonant unit 20 have a second cavity in the thickness direction (X direction) perpendicular to the substrate 10
  • the structure 20b, the second cavity structure 20b not only has a small loss to the sound wave, especially the longitudinal wave, but also can reflect the sound wave, especially the longitudinal wave, back to the resonance unit 20, thereby improving the performance of the resonance unit 20.
  • the resonance unit 20 on the same surface of the r-th substrate 10 when the k1th resonant unit 20 is adjacent to the k2th resonant unit 20’s electrode with the same name, the k1th resonant unit 20 and the k2th resonant unit 20’s electrode with the same name are connected as a U-shaped electrode, or the k1th The resonant unit 20 is electrically connected to the electrode with the same name of the k2th resonant unit 20 through the conductive interconnection structure 30 .
  • the electrodes with the same name of the k1th resonant unit 20 and the k2th resonant unit 20 arranged adjacently pass through the first horizontal connection part 21a
  • the second horizontal connection portion 23a is connected as a U-shaped electrode to realize the series connection of two adjacent resonant units 20, without the need to arrange a conductive interconnection structure 30 between two adjacent resonant units 20, further reducing bulk acoustic wave resonance
  • the dimension of the resonator component in the thickness direction (X direction) perpendicular to the substrate 10 is beneficial to form a miniaturized and highly integrated bulk acoustic wave resonator component and a communication device.
  • the U-shaped electrode connected to the same-named electrode of the k1th resonant unit 20 disposed adjacently and the k2th resonant unit 20 may be obtained by patterning from the same metal layer.
  • the electrode with the same name of the k1th resonant unit 20 and the k2th resonant unit 20 arranged adjacent to each other is electrically connected through the conductive interconnection structure 30, and through the same metal layer through patterning During the process of forming the first electrode 21 and the second electrode 23 , the complexity of the pattern on the mask plate is reduced, and the efficiency of manufacturing different resonant units 20 is improved.
  • the technical solution of realizing electrical connection between two resonant units 20 arranged adjacently is specifically introduced.
  • the following specifically introduces a technical solution for realizing electrical connection of two resonant units 20 separated by a resonant unit 20 .
  • the resonant units 20 on the same surface of the r-th substrate 10 there is at least one resonant unit 20 between the k3-th resonant unit 20 and the k4-th resonant unit 20, and the value of k3 is The value includes an integer greater than or equal to 1 and less than or equal to Qr, and the value of k4 includes an integer greater than or equal to 1 and less than or equal to Qr ; the k3th resonance unit 20 has the same name as the k4th resonance unit 20
  • the electrodes are electrically connected through the conductive interconnection structure 30 ; or, the electrodes of different names of the k3 th resonant unit and the k4 th resonant unit are electrically connected through the conductive interconnection structure 30 .
  • the resonant units 20 on the same surface of the r-th substrate 10 there is at least one resonant unit 20 between the k3-th resonant unit 20 and the k4-th resonant unit 20, and the k3-th resonant unit 20 and the k4-th resonant unit
  • the same-named electrodes or different-named electrodes of 20 are electrically connected through the conductive interconnection structure 30 , so as to realize the electrical connection between two non-adjacent resonant units 20 . It should be noted that the corresponding structural schematic diagram is not shown in this embodiment.
  • the suspended electrodes of the m-th resonant unit 20 20C is connected to the conductive interconnection structure 30;
  • the dangling electrode 20C of the mth resonant unit 20 includes a first electrode 21, and the second electrode 23 of the mth resonant unit 20 is the same or differently named electrode of the nth resonant unit 20 Electrically connected; or, the dangling electrode 20C of the mth resonance unit 20 includes a second electrode 23, and the first electrode 21 of the mth resonance unit 20 is electrically connected to the same-named electrode or the different-named electrode of the n-th resonance unit 20, wherein , the value of m includes an integer greater than or equal to 1 and less than or equal to Q r , the value of n includes an integer greater than or equal to
  • the suspended electrodes 20C of the m-th resonant unit 20 are connected to the conductive interconnection structure 30, so as to realize the resonance between different substrates 10 provided with the suspended electrodes 20C.
  • connection relationship of the resonant units on the same surface of the r-th substrate 10 includes series connection and/or parallel connection.
  • the resonance units 20 on the same surface of the r-th substrate 10 are connected in series. Specifically, the resonant units 20 on the same surface of the same substrate 10 are connected in series, which simplifies the connection relationship between the resonant units 20 on the same surface of the same substrate 10, thereby reducing the layout of the conductive interconnection structure 30 and the resonant unit 20 on the same surface of the same substrate 10. Difficulty, thereby reducing the fabrication cost of BAW resonator components.
  • the resonant units 20 on the same surface of the r-th substrate 10 are connected in series.
  • the resonant unit 20 including both serial connection and parallel connection can be arranged on the same surface of the same substrate 10 by means of the conductive interconnection structure 30, which can reduce the number of substrates 10 used to reduce the bulk acoustic wave resonator assembly.
  • a dimension parallel to the thickness direction (Y direction) of the substrate 10 is not structural diagram showing that the connection relationship of the resonant units on the same surface of the r-th substrate 10 includes series connection and parallel connection.
  • the technical solution that the resonant units 20 on the same surface of the same substrate 10 are only connected in parallel can also be realized by means of the conductive interconnection structure 30 .
  • the embodiment of the present invention also provides the following technical solutions:
  • the resonant unit 20 on the second surface 10B of the t-th substrate 10 and the resonant unit 20 on the first surface of the t-1th substrate 10 The intervals are interdigitated, and the value of t includes an integer greater than or equal to 2 and less than or equal to p.
  • the value of p is 2, and the value of t is 2.
  • the resonant unit 20 on the second surface 10B of the t-th substrate 10 and the resonant unit 20 on the first surface of the t-1-th substrate 10 are interdigitated, which can reduce the bulk acoustic wave resonator assembly.
  • the dimension in the thickness direction (Y direction) of the substrate 10 is helpful for forming a miniaturized and highly integrated bulk acoustic wave resonator component and a communication device composed of the bulk acoustic wave resonator component.
  • the space between different resonance units 20 not only has little loss for sound waves, especially longitudinal waves, but also can reflect sound waves, especially longitudinal waves, back to the resonance unit 20, thereby improving the resonance.
  • Unit 20 performance Specifically, in the direction perpendicular to the thickness of the substrate 10, the space between different resonance units 20 not only has little loss for sound waves, especially longitudinal waves, but also can reflect sound waves, especially longitudinal waves, back to the resonance unit 20, thereby improving the resonance. Unit 20 performance.
  • the first preset distance H2 is greater than or equal to 10 microns.
  • the structure adjacent to the resonant unit 20 may be any one of the connecting electrodes between the substrate 10, the carrier 40, and the resonant unit 20 or the conductive interconnection structure 30. kind.
  • the space between the resonant unit 20 and the adjacent structure not only has very little loss for acoustic waves, bulk acoustic waves, especially transverse waves, but also can absorb acoustic waves, especially transverse waves. Reflected back to the resonant unit 20 , thereby improving the performance of the resonant unit 20 .
  • the second preset distance H3 is greater than or equal to 10 microns.
  • the acoustic reflection structure 102 is disposed inside the substrate 10, but the embodiment of the present invention also includes a technical solution in which the acoustic reflection structure 102 is disposed on the surface of the substrate 10 .
  • the embodiment of the present invention also provides a method for preparing a bulk acoustic wave resonator assembly.
  • Fig. 13 shows a schematic flowchart of a method for preparing a BAW resonator assembly.
  • 14-15 are schematic cross-sectional structural diagrams corresponding to each step of a method for preparing a bulk acoustic wave resonator assembly provided by an embodiment of the present invention. Referring to FIG. 13, the method for preparing the BAW resonator assembly includes the following steps:
  • Step 110 providing a substrate.
  • a substrate 10 is provided.
  • the substrate 10 can be selected from materials such as single crystal silicon, gallium arsenide, sapphire, and quartz.
  • Step 120 forming at least one resonant unit on the surface of the substrate, the size of the resonant unit in the direction perpendicular to the thickness of the substrate is smaller than the size of the resonant unit in the direction parallel to the thickness of the substrate.
  • At least one resonant unit 20 is formed on the surface of the substrate 10, and the size of the resonant unit 20 in the thickness direction (X direction) perpendicular to the substrate 10 is smaller than that of the resonant unit 20 in the thickness direction (Y direction) parallel to the substrate 10. on the size.
  • the size of at least one resonant unit 20 in the thickness direction (X direction) perpendicular to the substrate 10 is smaller than the size of the resonant unit 20 in the thickness direction (Y direction) parallel to the substrate 10, reducing
  • the dimension of the bulk acoustic wave resonator assembly in the thickness direction (X direction) perpendicular to the substrate 10 is beneficial to form a miniaturized and highly integrated bulk acoustic wave resonator assembly and a communication device composed of the bulk acoustic wave resonator assembly.
  • the bulk acoustic wave of the resonance unit 20 is mainly in the thickness direction (X direction) perpendicular to the substrate 10 ), there is no need to set up an acoustic wave reflection structure parallel to the thickness direction (Y direction) of the substrate 10, which increases the firmness of the bulk acoustic wave resonator assembly, simplifies the structure of the bulk acoustic wave resonator assembly, and further simplifies the bulk acoustic wave resonance.
  • the preparation method of the resonator assembly reduces the manufacturing cost of the bulk acoustic wave resonator assembly.
  • FIG. 16 is a schematic flowchart of step 120 in FIG. 13 .
  • 17-18 are schematic cross-sectional structural diagrams corresponding to each step of the preparation method included in step 120.
  • forming at least one resonant unit on the surface of the substrate in step 120 includes the following steps:
  • Step 1201 forming at least one piezoelectric layer on the surface of the substrate.
  • a thin film of piezoelectric layer 22 may be grown on the surface of substrate 10 , and then at least one piezoelectric layer 22 may be formed by etching.
  • the piezoelectric layer 22 can be selected from single crystal piezoelectric thin film materials such as aluminum nitride, zinc oxide, lead zirconate titanate piezoelectric ceramics, lithium niobate, lithium tantalate, potassium niobate, and polycrystalline piezoelectric thin film materials. at least one of. It is also possible to dope a certain proportion of rare earth elements in the piezoelectric layer 22 to improve the performance of the piezoelectric material layer.
  • Step 1202 forming at least one first electrode on the surface of the substrate.
  • At least one first electrode 21 may be formed on the surface of the substrate 10 by a metal lift-off method.
  • the first electrode 21 may be selected from at least one of molybdenum, ruthenium, gold, aluminum, magnesium, tungsten, copper and titanium with good electrical conductivity.
  • Step 1203 forming at least one second electrode on the surface of the substrate, wherein, in a direction perpendicular to the thickness of the substrate, the resonant unit includes a stacked structure of the first electrode, the piezoelectric layer and the second electrode.
  • At least one second electrode 23 can be formed on the surface of the substrate 10 by a metal lift-off method, wherein, in a direction perpendicular to the thickness of the substrate 10, the resonance unit 20 includes a first electrode 21, a piezoelectric layer 22 and a second electrode 23.
  • the second electrode 23 may be selected from at least one of molybdenum, ruthenium, gold, aluminum, magnesium, tungsten, copper and titanium with good electrical conductivity.
  • the above preparation method forms at least one resonant unit 20 vertically arranged on the surface of the substrate 10, specifically, in the thickness direction (X direction) perpendicular to the substrate 10, the resonant unit 20 includes a first electrode 21, a piezoelectric layer 22 and a stacked structure of the second electrode 23.
  • the resonance unit 20 is vertically arranged on the surface of the substrate 10, and the dimension of the resonance unit 20 perpendicular to the thickness direction (X direction) of the substrate 10 is smaller than the dimension parallel to the thickness direction (Y direction) of the substrate 10, which reduces the bulk acoustic resonance.
  • the resonance unit 20 includes a stacked structure of the first electrode 21, the piezoelectric layer 22 and the second electrode 23, so that the reflection of the bulk acoustic wave generated by the piezoelectric layer 22
  • the direction is parallel to the X direction, and there is no need to arrange an acoustic wave reflection structure parallel to the thickness direction (Y direction) of the substrate 10, which improves the firmness of the device, simplifies the structure of the bulk acoustic wave resonator assembly, and then simplifies the construction of the bulk acoustic wave resonator assembly.
  • the preparation method reduces the production cost of the bulk acoustic wave resonator assembly.
  • the embodiment of the present invention also provides a method for preparing a bulk acoustic wave resonator assembly with an acoustic reflection structure.
  • the method for preparing the BAW resonator assembly includes the following steps:
  • Step 110 providing a substrate, wherein at least one acoustic reflection structure is provided on the surface or inside of the substrate.
  • a substrate 10 is provided.
  • the substrate 10 can be selected from materials such as single crystal silicon, gallium arsenide, sapphire, and quartz.
  • the acoustic reflection structure 102 includes any one of the cavity structure 102a, the Bragg reflection layer 102b, and the backside through hole 102c.
  • the bulk acoustic wave resonator component of the acoustic reflection structure 102 with the cavity structure 102a has higher quality factor, smaller loss and electromechanical coupling. features with higher coefficients.
  • Step 120 forming at least one resonant unit on the surface of the substrate, the size of the resonant unit in the direction perpendicular to the thickness of the substrate is smaller than the size of the resonant unit in the direction parallel to the thickness of the substrate, and the projection of the resonant unit on the substrate is in line with the acoustic reflection structure
  • the projections of the substrates are at least partially overlapped, and the acoustic reflection structure is used to prevent the shear wave of the resonant unit from leaking to the substrate.
  • At least one resonant unit 20 is formed on the surface of the substrate 10, the size of the resonant unit 20 in the thickness direction perpendicular to the substrate 10 is smaller than the size of the resonant unit 20 in the thickness direction parallel to the substrate 10, and the resonance
  • the gap between the unit 20 and the resonance unit 20 can realize the effect of reflecting the longitudinal wave back to the resonance unit 20 and preventing the leakage of the longitudinal wave.
  • the surface or inside of the substrate 10 is provided with at least one acoustic reflection structure 102, and the projection of the resonance unit 20 on the substrate 10 and the projection of the acoustic reflection structure 102 on the substrate 10 at least partially overlap, and the acoustic reflection structure 102 is used to prevent transverse waves in the resonance unit 20 leakage to the substrate 10.
  • the size of at least one resonant unit 20 in the direction perpendicular to the thickness of the substrate 10 is smaller than the size of the resonant unit 20 in the direction parallel to the thickness of the substrate 10, reducing the bulk acoustic wave resonator component in the vertical direction.
  • the dimension in the thickness direction of the substrate 10 is beneficial to form a miniaturized and highly integrated bulk acoustic wave resonator component and a communication device composed of the bulk acoustic wave resonator component.
  • the gap between the resonance unit 20 and the resonance unit 20 can realize the effect of reflecting the longitudinal wave back to the resonance unit 20 and preventing the leakage of the longitudinal wave.
  • the projection of the acoustic reflection structure 102 on the substrate 10 and the projection of the resonant unit 20 on the substrate 10 are at least partially overlapped.
  • the acoustic reflection structure 102 is used to prevent the shear wave in the resonant unit 20 from leaking to the substrate 10 , thereby reducing the loss of sound waves.
  • the size of the acoustic reflection structure 102 needs to match the resonant unit 20, as the size of the bulk acoustic wave resonator component decreases in the direction perpendicular to the thickness of the substrate 10, the size of the acoustic reflection structure 102 in the direction perpendicular to the thickness of the substrate 10 is relatively small. Small range, which in turn improves the firmness of the bulk acoustic wave resonator assembly.
  • step 110 and step 120 include the following steps:
  • Step 210 providing a substrate.
  • a substrate 10 is provided.
  • Step 220 forming at least one through hole on the surface of the substrate.
  • At least one groove 103 is formed on the surface of the substrate 10 .
  • Step 230 forming a sacrificial layer on the surface of the substrate and in the through hole.
  • a sacrificial layer 104 is formed on the surface of the substrate 10 and in the groove 103 .
  • Step 240 removing the sacrificial layer on the surface of the substrate.
  • the sacrificial layer 104 on the surface of the substrate 10 is removed.
  • Step 250 forming at least one resonant unit on the surface of the substrate.
  • At least one resonance unit 20 is formed on the surface of the substrate 10 .
  • Step 260 removing the sacrificial layer to form a cavity structure.
  • the sacrificial layer 104 is removed to form a cavity structure 102a.
  • step 110 includes:
  • Grooves are formed on the surface of the substrate, and Bragg reflection layers formed by alternately stacking high and low acoustic impedance layers are formed in the grooves to form at least one Bragg reflection layer.
  • grooves are formed on the surface of the substrate 10 , and Bragg reflection layers 102 b formed by alternately stacking high and low acoustic impedance layers are sequentially formed in the grooves to form at least one anti-acoustic reflection structure 102 .
  • step 110 when using the rear through hole 102c as the acoustic reflection structure 102 to prevent the shear wave of the resonance unit 20 from leaking to the substrate 10, step 110 includes:
  • Backside via holes are formed on the surface of the substrate.
  • a backside through hole 102 c is formed on the surface of the substrate 10 to form at least one acoustic reflection structure 102 .
  • FIG. 16 is a schematic flowchart of step 120 in FIG. 27 .
  • 32-34 are schematic cross-sectional structural diagrams corresponding to each step of the preparation method included in step 120.
  • forming at least one resonant unit on the surface of the substrate in step 120 includes the following steps:
  • Step 1201 forming at least one piezoelectric layer on the surface of the substrate.
  • a thin film of piezoelectric layer 22 may be grown on the surface of substrate 10 , and then at least one piezoelectric layer 22 may be formed by etching.
  • the piezoelectric layer 22 can be selected from single crystal piezoelectric thin film materials such as aluminum nitride, zinc oxide, lead zirconate titanate piezoelectric ceramics, lithium niobate, lithium tantalate, potassium niobate, and polycrystalline piezoelectric thin film materials. at least one of. It is also possible to dope a certain proportion of rare earth elements in the piezoelectric layer 22 to improve the performance of the piezoelectric material layer.
  • Step 1202 forming at least one first electrode on the surface of the substrate.
  • At least one first electrode 21 may be formed on the surface of the substrate 10 by a metal lift-off method.
  • the first electrode 21 may be selected from at least one of molybdenum, ruthenium, gold, aluminum, magnesium, tungsten, copper and titanium with good electrical conductivity.
  • Step 1203 forming at least one second electrode on the surface of the substrate, wherein, in a direction perpendicular to the thickness of the substrate, the resonant unit includes a stacked structure of the first electrode, the piezoelectric layer and the second electrode.
  • At least one second electrode 23 can be formed on the surface of the substrate 10 by a metal lift-off method, wherein, in a direction perpendicular to the thickness of the substrate 10, the resonance unit 20 includes a first electrode 21, a piezoelectric layer 22 and a second electrode 23.
  • the second electrode 23 may be selected from at least one of molybdenum, ruthenium, gold, aluminum, magnesium, tungsten, copper and titanium with good electrical conductivity.
  • step 1203 removing the sacrificial layer is also included.
  • the sacrificial layer 104 is removed to form a cavity structure 102a.
  • the above preparation method forms at least one resonant unit 20 vertically arranged on the surface of the substrate 10, specifically, in the direction perpendicular to the thickness of the substrate 10, the resonant unit 20 includes a first electrode 21, a piezoelectric layer 22 and a second electrode 23 laminated structures.
  • the resonant unit 20 is vertically arranged on the surface of the substrate 10, and the dimension of the resonant unit 20 perpendicular to the thickness direction of the substrate 10 is smaller than the dimension parallel to the thickness direction of the substrate 10, which reduces the bulk acoustic wave resonator assembly.
  • the size of the direction is beneficial to form a miniaturized and highly integrated bulk acoustic wave resonator component and a communication device.
  • the gap between the resonance unit 20 and the resonance unit 20 can realize the effect of reflecting the longitudinal wave in the sound wave back to the resonance unit 20 and preventing the leakage of the longitudinal wave.
  • the acoustic reflection structure 102 is used to prevent the acoustic wave in the resonance unit 20 , especially the transverse wave, from leaking to the substrate 10 . Since the resonant unit 20 is vertically arranged on the surface of the substrate 10, the area of the resonant unit 20 can be increased by increasing the height H of the resonant unit 20 and/or the size of the resonant unit 20 on a plane perpendicular to the X-axis and the Y-axis, Further, the intensity of the acoustic wave signal generated by the resonance unit 20 is enhanced.
  • An embodiment of the present invention also provides a communication device, which includes the bulk acoustic wave resonator assembly described in any of the above technical solutions; specifically, the communication device includes at least one of a filter, a duplexer, and a multiplexer kind.
  • At least two bulk acoustic wave resonator components are connected in series and in parallel to implement a filter for passing signals in a certain frequency band.
  • the duplexer can be simply understood as the work of two filters, one is the receiving filter to receive the signal, and the other is the transmitting filter to transmit the signal.
  • a multiplexer can be simply understood as a communication device composed of at least two duplexers.
  • the communication device provided by the embodiment of the present invention includes the bulk acoustic wave resonator assembly described in any of the above technical solutions, and therefore has the beneficial effects of the above bulk acoustic wave resonator assembly, and will not be repeated here.

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  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)

Abstract

La présente invention concerne un ensemble résonateur acoustique en volume, un procédé de fabrication et un dispositif de communication. L'ensemble résonateur acoustique en volume comprend : un substrat ; et au moins une unité de résonance, l'unité de résonance étant située sur une surface du substrat, la taille de l'unité de résonance dans une direction perpendiculaire à la direction de l'épaisseur du substrat étant inférieure à la taille de l'unité de résonance dans une direction parallèle à la direction de l'épaisseur du substrat, et dans la direction perpendiculaire à la direction de l'épaisseur du substrat, l'unité de résonance comprenant une structure stratifiée constituée d'une première électrode, d'une couche piézoélectrique et d'une seconde électrode. Selon la solution technique décrite dans les modes de réalisation de la présente invention, les tailles de l'ensemble résonateur acoustique en volume et du dispositif de communication dans la direction perpendiculaire à la direction de l'épaisseur du substrat sont réduites.
PCT/CN2022/091455 2021-06-23 2022-05-07 Ensemble résonateur acoustique en volume, procédé de fabrication et dispositif de communication WO2022267710A1 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
CN202110694766.4A CN113258900B (zh) 2021-06-23 2021-06-23 一种体声波谐振器组件、制备方法以及通信器件
CN202110694766.4 2021-06-23
CN202110926424.0 2021-08-12
CN202110926424.0A CN113659953B (zh) 2021-08-12 2021-08-12 一种体声波谐振器组件、制备方法以及通信器件

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JP2001044794A (ja) * 1999-07-30 2001-02-16 Kyocera Corp 圧電共振子
US20030112097A1 (en) * 2001-12-17 2003-06-19 Intel Corporation Film bulk acoustic resonator structure and method of making
US20060066175A1 (en) * 2004-09-24 2006-03-30 Murata Manufacturing Co., Ltd. Piezoelectric resonator, method for manufacturing the same, piezoelectric filter, and duplexer
US20140246956A1 (en) * 2011-10-05 2014-09-04 Centre National De La Recherche Scientifique (C.N. R.S) Volume wave resonators on micromachined vertical structures
US20140292155A1 (en) * 2011-10-05 2014-10-02 Universite De Franche-Comte Electro-acoustic transducer with periodic ferroelectric polarization produced on a micromachined vertical structure
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