WO2022255200A1 - Substrate with laminated film - Google Patents
Substrate with laminated film Download PDFInfo
- Publication number
- WO2022255200A1 WO2022255200A1 PCT/JP2022/021449 JP2022021449W WO2022255200A1 WO 2022255200 A1 WO2022255200 A1 WO 2022255200A1 JP 2022021449 W JP2022021449 W JP 2022021449W WO 2022255200 A1 WO2022255200 A1 WO 2022255200A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- laminated film
- layer
- film
- substrate
- antimony
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 68
- 239000000463 material Substances 0.000 claims abstract description 128
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims abstract description 59
- 229910001887 tin oxide Inorganic materials 0.000 claims abstract description 45
- 229910052787 antimony Inorganic materials 0.000 claims abstract description 33
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims abstract description 31
- 239000011521 glass Substances 0.000 claims description 62
- 230000003287 optical effect Effects 0.000 claims description 45
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 34
- 229910044991 metal oxide Inorganic materials 0.000 claims description 21
- 150000004706 metal oxides Chemical class 0.000 claims description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 17
- 238000010521 absorption reaction Methods 0.000 claims description 17
- 239000011787 zinc oxide Substances 0.000 claims description 17
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 13
- 229910003437 indium oxide Inorganic materials 0.000 claims description 9
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 9
- 229910052681 coesite Inorganic materials 0.000 claims description 7
- 229910052906 cristobalite Inorganic materials 0.000 claims description 7
- 239000000377 silicon dioxide Substances 0.000 claims description 7
- 235000012239 silicon dioxide Nutrition 0.000 claims description 7
- 229910052682 stishovite Inorganic materials 0.000 claims description 7
- 229910052905 tridymite Inorganic materials 0.000 claims description 7
- 229910000611 Zinc aluminium Inorganic materials 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 243
- 239000010408 film Substances 0.000 description 175
- 239000002585 base Substances 0.000 description 48
- 239000007789 gas Substances 0.000 description 38
- 239000002994 raw material Substances 0.000 description 31
- 150000003606 tin compounds Chemical class 0.000 description 24
- 238000000034 method Methods 0.000 description 23
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 22
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 15
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 14
- 229910006404 SnO 2 Inorganic materials 0.000 description 13
- 239000013078 crystal Substances 0.000 description 13
- 238000005259 measurement Methods 0.000 description 13
- 238000005229 chemical vapour deposition Methods 0.000 description 12
- 230000000694 effects Effects 0.000 description 11
- 238000001228 spectrum Methods 0.000 description 11
- 229910004298 SiO 2 Inorganic materials 0.000 description 10
- 238000000576 coating method Methods 0.000 description 10
- 238000002834 transmittance Methods 0.000 description 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 9
- 239000011248 coating agent Substances 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 9
- 239000001301 oxygen Substances 0.000 description 9
- 229910052760 oxygen Inorganic materials 0.000 description 9
- 239000002243 precursor Substances 0.000 description 9
- 239000010409 thin film Substances 0.000 description 9
- 150000001463 antimony compounds Chemical class 0.000 description 8
- DAMJCWMGELCIMI-UHFFFAOYSA-N benzyl n-(2-oxopyrrolidin-3-yl)carbamate Chemical compound C=1C=CC=CC=1COC(=O)NC1CCNC1=O DAMJCWMGELCIMI-UHFFFAOYSA-N 0.000 description 8
- 239000012535 impurity Substances 0.000 description 8
- 238000013041 optical simulation Methods 0.000 description 8
- 229910052718 tin Inorganic materials 0.000 description 8
- 239000000203 mixture Substances 0.000 description 7
- 229910052757 nitrogen Inorganic materials 0.000 description 7
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 6
- DTQVDTLACAAQTR-UHFFFAOYSA-N Trifluoroacetic acid Chemical compound OC(=O)C(F)(F)F DTQVDTLACAAQTR-UHFFFAOYSA-N 0.000 description 6
- 238000004458 analytical method Methods 0.000 description 6
- YMLFYGFCXGNERH-UHFFFAOYSA-K butyltin trichloride Chemical compound CCCC[Sn](Cl)(Cl)Cl YMLFYGFCXGNERH-UHFFFAOYSA-K 0.000 description 6
- 239000012159 carrier gas Substances 0.000 description 6
- 238000000151 deposition Methods 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- 229910052731 fluorine Inorganic materials 0.000 description 6
- 238000009413 insulation Methods 0.000 description 6
- 239000005344 low-emissivity glass Substances 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- 229920005989 resin Polymers 0.000 description 6
- 239000011347 resin Substances 0.000 description 6
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 6
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 5
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 5
- 239000011737 fluorine Substances 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 5
- GGAUUQHSCNMCAU-ZXZARUISSA-N (2s,3r)-butane-1,2,3,4-tetracarboxylic acid Chemical compound OC(=O)C[C@H](C(O)=O)[C@H](C(O)=O)CC(O)=O GGAUUQHSCNMCAU-ZXZARUISSA-N 0.000 description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 4
- 239000003570 air Substances 0.000 description 4
- LJCFOYOSGPHIOO-UHFFFAOYSA-N antimony pentoxide Chemical compound O=[Sb](=O)O[Sb](=O)=O LJCFOYOSGPHIOO-UHFFFAOYSA-N 0.000 description 4
- ADCOVFLJGNWWNZ-UHFFFAOYSA-N antimony trioxide Chemical compound O=[Sb]O[Sb]=O ADCOVFLJGNWWNZ-UHFFFAOYSA-N 0.000 description 4
- 150000002222 fluorine compounds Chemical class 0.000 description 4
- 230000006911 nucleation Effects 0.000 description 4
- 238000010899 nucleation Methods 0.000 description 4
- -1 polyethylene terephthalate Polymers 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- HUAUNKAZQWMVFY-UHFFFAOYSA-M sodium;oxocalcium;hydroxide Chemical compound [OH-].[Na+].[Ca]=O HUAUNKAZQWMVFY-UHFFFAOYSA-M 0.000 description 4
- 238000005507 spraying Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 238000005728 strengthening Methods 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- VXUYXOFXAQZZMF-UHFFFAOYSA-N titanium(IV) isopropoxide Chemical compound CC(C)O[Ti](OC(C)C)(OC(C)C)OC(C)C VXUYXOFXAQZZMF-UHFFFAOYSA-N 0.000 description 4
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 3
- 239000005977 Ethylene Substances 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 229910021627 Tin(IV) chloride Inorganic materials 0.000 description 3
- 229910002092 carbon dioxide Inorganic materials 0.000 description 3
- 239000001569 carbon dioxide Substances 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 229940117927 ethylene oxide Drugs 0.000 description 3
- 239000005357 flat glass Substances 0.000 description 3
- 239000002346 layers by function Substances 0.000 description 3
- 239000010955 niobium Substances 0.000 description 3
- 239000005368 silicate glass Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 3
- HPGGPRDJHPYFRM-UHFFFAOYSA-J tin(iv) chloride Chemical compound Cl[Sn](Cl)(Cl)Cl HPGGPRDJHPYFRM-UHFFFAOYSA-J 0.000 description 3
- 238000001771 vacuum deposition Methods 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- 229940058905 antimony compound for treatment of leishmaniasis and trypanosomiasis Drugs 0.000 description 2
- VMPVEPPRYRXYNP-UHFFFAOYSA-I antimony(5+);pentachloride Chemical compound Cl[Sb](Cl)(Cl)(Cl)Cl VMPVEPPRYRXYNP-UHFFFAOYSA-I 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000005587 bubbling Effects 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000000313 electron-beam-induced deposition Methods 0.000 description 2
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 2
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000000691 measurement method Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 239000012702 metal oxide precursor Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 229920005672 polyolefin resin Polymers 0.000 description 2
- 238000000985 reflectance spectrum Methods 0.000 description 2
- 238000001878 scanning electron micrograph Methods 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 150000003377 silicon compounds Chemical class 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- 239000006200 vaporizer Substances 0.000 description 2
- 150000003752 zinc compounds Chemical class 0.000 description 2
- POILWHVDKZOXJZ-ARJAWSKDSA-M (z)-4-oxopent-2-en-2-olate Chemical compound C\C([O-])=C\C(C)=O POILWHVDKZOXJZ-ARJAWSKDSA-M 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- 239000006018 Li-aluminosilicate Substances 0.000 description 1
- 238000006124 Pilkington process Methods 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 238000003848 UV Light-Curing Methods 0.000 description 1
- 230000032900 absorption of visible light Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000005354 aluminosilicate glass Substances 0.000 description 1
- 229910000410 antimony oxide Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 239000005385 borate glass Substances 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000003426 chemical strengthening reaction Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- HQWPLXHWEZZGKY-UHFFFAOYSA-N diethylzinc Chemical compound CC[Zn]CC HQWPLXHWEZZGKY-UHFFFAOYSA-N 0.000 description 1
- IJKVHSBPTUYDLN-UHFFFAOYSA-N dihydroxy(oxo)silane Chemical compound O[Si](O)=O IJKVHSBPTUYDLN-UHFFFAOYSA-N 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 239000005038 ethylene vinyl acetate Substances 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- SKWCWFYBFZIXHE-UHFFFAOYSA-K indium acetylacetonate Chemical compound CC(=O)C=C(C)O[In](OC(C)=CC(C)=O)OC(C)=CC(C)=O SKWCWFYBFZIXHE-UHFFFAOYSA-K 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000005340 laminated glass Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 229910000484 niobium oxide Inorganic materials 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 1
- 229920006122 polyamide resin Polymers 0.000 description 1
- 229920001083 polybutene Polymers 0.000 description 1
- 229920005668 polycarbonate resin Polymers 0.000 description 1
- 239000004431 polycarbonate resin Substances 0.000 description 1
- 229920001225 polyester resin Polymers 0.000 description 1
- 239000004645 polyester resin Substances 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 229920000306 polymethylpentene Polymers 0.000 description 1
- 239000011116 polymethylpentene Substances 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920005990 polystyrene resin Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000003303 reheating Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000000391 spectroscopic ellipsometry Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
- B32B7/02—Physical, chemical or physicochemical properties
- B32B7/023—Optical properties
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B9/00—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
Definitions
- the present invention relates to a laminated film-coated base material, and more particularly to a laminated film-coated base material suitable for use in heat shielding and heat insulation of vehicles, buildings, and other structures.
- Glass substrates with thin films and substrates with films, such as films with thin films, are widely used in various fields as materials that satisfy various required properties by laminating a functional film on the glass or film that is the main material.
- Low-emissivity glass With heat insulation and heat shielding properties is used due to the recent heightened awareness of energy conservation.
- Low-emissivity glass is constructed by laminating one or more functional layers made of metal oxide or the like on a glass substrate. It has a light absorption layer, an optical adjustment layer, and the like.
- Patent Document 1 describes antimony-containing/tin oxide-based thin films containing at least antimony and fluorine-containing/fluorine-containing thin films as metal oxide-based thin films on the surface of a glass substrate.
- Low emissivity glasses including tin oxide based thin films are described.
- Patent Document 2 discloses (a) a glass substrate, (b) an antimony-doped tin oxide coating applied to the glass substrate, and (c) a fluorine-doped oxide applied to the antimony-doped tin oxide coating. Visible light transmission (reference illuminant C) and total It is stated to be selected to have a difference between the solar energy transmission (for an air mass of 1.5).
- the present invention has been made to solve the above problems, and is a substrate with a laminated film having a plurality of functional layers on a main material, which has robustness against color tone and when enlarged
- An object of the present invention is to provide a laminated film-attached base material capable of suppressing color spots.
- the present inventors have worked diligently to solve the above problems with respect to a base material that has both heat shielding and heat insulating properties.
- the present inventors have found that the above problems can be solved by adopting an antimony-doped tin oxide film and setting the concentration of antimony contained in the heat-absorbing layer and the thickness of the heat-absorbing layer within specific ranges, thereby completing the present invention.
- the present invention consists of the following configurations.
- a laminated film-attached base material comprising a main material and a laminated film disposed on the main material,
- the main member has a first surface and a second surface facing each other, and the laminated film is provided on the first surface of the main member,
- the laminated film has a heat ray absorbing layer and an infrared reflective layer from the side closer to the main material,
- the heat ray absorbing layer is formed of an antimony-doped tin oxide film, the concentration of antimony contained in the heat ray absorbing layer is 3 to 14 mol%, and the thickness of the heat ray absorbing layer is 100 to 300 nm or 425 to 1000 nm.
- a substrate with a laminated film comprising a main material and a laminated film disposed on the main material,
- the main member has a first surface and a second surface facing each other, and the laminated film is provided on the first surface of the main member,
- the laminated film has
- the base material with a laminated film of the present invention includes a heat ray absorbing layer and an infrared reflective layer, it has heat shielding and heat insulating properties, and the heat ray absorbing layer contains antimony at a concentration of 3 to 14 mol% and has a thickness of is 100 to 300 nm or 425 to 1000 nm, it is possible to significantly suppress the reflection color tone unevenness in the visible light region in the surface of the substrate with the laminated film on the infrared reflective layer side, and to have excellent color tone robustness. As a result, even when the laminated film-coated base material has a large area of 0.5 m 2 or more, it is possible to suppress variations in reflection color within the surface, and thus color spots can be reduced.
- FIG. 1 is a cross-sectional view of a substrate with a laminated film for explaining the configuration of one embodiment of the substrate with a laminated film of the present invention.
- FIG. 2 is a cross-sectional view of a laminated film-attached substrate for explaining the configuration of another embodiment of the laminated film-attached substrate of the present invention.
- FIG. 3 is a schematic diagram for explaining the mechanism of occurrence of color spots.
- FIG. 4 is a flow diagram schematically showing an example of the method for producing a substrate with a laminated film of the present invention.
- FIG. 5 is a diagram showing the results of the reflection spectrum comparison performed in Experimental Example 2.
- FIG. 5(a) is Example 19
- FIG. 5(b) is Example 20
- FIG. , FIG. 5(d) is Example 22, and
- FIG. 5(e) is Example 23.
- FIG. 1 is a cross-sectional view for explaining the configuration of the laminated film-attached base material of the present invention.
- the laminated film-attached substrate 10 of the present invention comprises a main member 1 and a laminated film 2 disposed on the main member 1 .
- the main member 1 has a first surface 1a and a second surface 1b facing each other, and a laminated film 2 is provided on the first surface 1a of the main member 1 .
- the laminated film 2 has a heat ray absorbing layer 3 and an infrared reflecting layer 5 in order from the side closer to the main material 1 .
- the heat ray absorbing layer 3 is formed of an antimony-doped tin oxide film, the concentration of antimony contained in the heat ray absorbing layer 3 is 3 to 14 mol %, and the thickness of the heat ray absorbing layer 3 is 100 to 300 nm or 425 to 1000 nm. be.
- the main material 1 serves as a skeleton of the base material 10 with a laminated film and has self-supporting properties.
- Materials constituting the main material include, for example, glass and resin.
- glass examples include soda lime silicate glass, aluminosilicate glass, borate glass, lithium aluminosilicate glass, quartz glass, borosilicate glass, alkali-free glass, and the like.
- resins include polyolefin resins, polyester resins, polyamide resins, polystyrene resins, polyethylene terephthalate resins, polyvinyl chloride resins, and polycarbonate resins.
- Polyolefin resins include, for example, polyethylene (low density, medium density, high density), polypropylene, polymethylpentene, polybutene, ethylene-propylene copolymer, ethylene-vinyl acetate copolymer and the like.
- glass can be suitably used as the main material for the base material with the laminated film of the present invention.
- the main material can be selected from transparent, translucent, or opaque depending on the application and purpose of use of the base material with a laminated film. is preferred.
- the main material may be colorless or colored.
- the shape of the main material is not particularly limited, and may be plate-like, film-like, sheet-like, etc., and any shape is possible depending on the intended use.
- it is preferably plate-shaped for use in vehicle members and construction members.
- the size of the main material is not particularly limited, and may be appropriately adjusted according to the application and purpose of use of the base material with a laminated film.
- a glass plate is used as the main material, the thickness of the glass plate is 1 mm to 5 mm, and the area of the main surface of the glass plate is 0.5 to 5 m 2 .
- the base material with laminated film is used in a building, a glass plate is used as the main material, the thickness of the glass plate is 4 mm to 8 mm, and the area of the main surface of the glass plate is 0.5 to 10 m 2 . is preferred.
- the heat absorbing layer 3 is composed of an antimony-doped tin oxide (ATO, a metal oxide obtained by adding Sb to SnO 2 ) film.
- ATO antimony-doped tin oxide
- Sb antimony
- the heat absorbing layer may be composed of one layer of antimony-doped tin oxide film, or may be composed of two or more layers of antimony-doped tin oxide films having different antimony concentrations.
- the concentration of antimony contained in the heat-absorbing layer is 3-14 mol %.
- the concentration of antimony contained in the heat ray absorbing layer is 3 mol% or more, the heat shielding effect can be exhibited, and the base material with the laminated film can have color tone robustness. Since the refractive index difference of the reflective layer is small and the reflection at the interface does not increase, robustness can be ensured.
- the concentration of antimony contained in the heat-absorbing layer is preferably 4 mol% or more, more preferably 5 mol% or more, still more preferably 6 mol%, preferably 13 mol% or less, more preferably 12 mol% or less, 11 mol % or less is more preferable.
- the concentration of antimony contained in the heat absorption layer can be identified by X-ray photoelectron spectroscopy (XPS) or secondary ion mass spectroscopy (SIMS).
- XPS X-ray photoelectron spectroscopy
- SIMS secondary ion mass spectroscopy
- analysis in the depth direction is performed by X-ray photoelectron spectroscopy (XPS), and the intensity ratio between Sb and Sn can be examined.
- the thickness of the heat absorption layer is 100-300 nm or 425-1000 nm.
- Tin oxide to which antimony has been added has a high absorption of visible light, and when the thickness of the heat ray absorbing layer is within the above range, interference of visible light in the heat ray absorbing layer can be suppressed, so color tone robustness can be obtained.
- the thickness of the heat absorption layer is more than 300 nm and less than 425 nm, the effect of the present invention cannot be obtained when the antimony concentration is 3 to 14 mol %. It is assumed that this is because interference of visible light occurs within the heat ray absorbing layer.
- the thickness of the heat-absorbing layer is preferably 120 nm or more, more preferably 150 nm or more, still more preferably 200 nm or more, further preferably 290 nm or less, and 280 nm or less when the thickness is in the range of 100 to 300 nm. more preferred.
- the thickness in the range of 425 to 1000 nm is preferably 450 nm or more, more preferably 470 nm or more, and preferably 900 nm or less, more preferably 800 nm or less.
- the thickness of the heat-absorbing layer can be measured by analysis in the depth direction using X-ray photoelectron spectroscopy (XPS). Since the heat absorbing layer is formed of crystal grains of antimony and tin oxide, the surface opposite to the main material side has an uneven shape. Therefore, although the "thickness" of the heat ray absorbing layer varies depending on the location, in the present invention, it represents the maximum thickness of the heat ray absorbing layer in the measurement area.
- XPS X-ray photoelectron spectroscopy
- the infrared reflective layer 5 is a layer that reflects infrared rays and imparts heat insulation to the base material with the laminated film, and is laminated on the heat ray absorbing layer 3 .
- the material constituting the infrared reflective layer is not particularly limited as long as it has a function of reflecting infrared rays.
- Materials constituting the infrared reflective layer include, for example, at least one metal oxide selected from the group consisting of tin oxide, indium oxide, zinc oxide, titanium oxide, tantalum oxide, and niobium oxide, and other elements (impurity elements). doped metal oxides. Impurity elements to be doped include, for example, fluorine, antimony, tin, potassium, aluminum, tantalum, niobium, nitrogen, boron, and indium.
- Specific doped metal oxides include, for example, fluorine-doped tin oxide (FTO, a metal oxide in which F is added to SnO2 ), antimony-doped tin oxide (ATO, a metal oxide in which Sb is added to SnO2 ).
- FTO fluorine-doped tin oxide
- ATO antimony-doped tin oxide
- ITO metal oxide in which Sn is added to In 2 O 3
- gallium-doped zinc oxide GZO, metal oxide in which Ga is added to ZnO
- aluminum-doped zinc oxide AZO, ZnO to which Al is added doped metal oxide
- tantalum-doped tin oxide metal oxide with Ta added to SnO2
- niobium-doped tin oxide metal oxide with Nb added to SnO2
- tantalum-doped titanium oxide Ti with Ta added niobium-doped titanium oxide (metal oxide in which Nb is added to Ti
- aluminum-doped tin oxide metal oxide in which Al is added to SnO2
- fluorine-doped titanium oxide metal oxide in which F is added to Ti
- nitrogen-doped titanium oxide a metal oxide in which N is added to Ti
- At least selected from the group consisting of fluorine-doped tin oxide (FTO), antimony-doped tin oxide (ATO), tin-doped indium oxide (ITO), gallium-doped zinc oxide (GZO) and aluminum-doped zinc oxide (AZO) It preferably comprises a single metal oxide film. Among them, it is preferable to include a fluorine-doped tin oxide (FTO) film from the viewpoint of obtaining higher heat insulation.
- the infrared reflective layer may consist of a single layer film, or may consist of two or more layers of films with different materials, element contents, and the like.
- the content of impurity elements contained in the infrared reflective layer is preferably 0.01 to 20 mol % in concentration.
- concentration of the impurity element contained in the infrared reflective layer is 0.01 mol % or more, more preferably 0.1 mol % or more, still more preferably 0.5 mol % or more, and more preferably 10 mol % or less. It is preferably 8 mol % or less, more preferably 5 mol % or less.
- the concentration of the impurity element is the total amount when the infrared reflective layer contains a plurality of impurity elements.
- the composition of the infrared reflective layer and the concentration of impurity elements can be identified by X-ray photoelectron spectroscopy (XPS) or secondary ion mass spectroscopy (SIMS).
- XPS X-ray photoelectron spectroscopy
- SIMS secondary ion mass spectrometry
- the infrared reflective layer contains a fluorine-doped tin oxide film, and the concentration of fluorine contained in the infrared reflective layer is 0.01. ⁇ 10 mol% is particularly preferred.
- the thickness of the infrared reflective layer is preferably 50-400 nm.
- the thickness of the infrared reflective layer is more preferably 75 nm or more, still more preferably 100 nm or more, particularly preferably 110 nm or more, more preferably 380 nm or less, even more preferably 350 nm or less, and particularly 325 nm or less. preferable.
- the thickness of the infrared reflective layer can be measured by analysis in the depth direction by X-ray photoelectron spectroscopy (XPS) measurement, or the like.
- XPS X-ray photoelectron spectroscopy
- the "thickness" of the infrared reflective layer is represented by the total thickness of each layer.
- the infrared reflective layer is formed of metal oxide crystal grains, and the surface of the heat ray absorbing layer laminated as described above has an uneven shape. The surface opposite to the heat-absorbing layer) has an uneven shape. Therefore, although the "thickness" of the infrared reflective layer varies depending on the location, in the present invention it represents the maximum thickness of the infrared reflective layer in the measurement area.
- the arithmetic mean roughness Ra of the surface of the infrared reflective layer is preferably in the range of 3 nm to 50 nm, more preferably in the range of 5 nm to 30 nm.
- the laminated film 2 may further have an optical adjustment layer 7 as shown in FIG.
- the optical adjustment layer 7 is arranged between the main material 1 and the heat absorption layer 3 .
- optical adjustment layer Materials constituting the optical adjustment layer include, for example, silicon carbide oxide (SiOC), silicon oxide (SiO 2 ), titanium oxide (TiO 2 ), tin oxide (SnO 2 ), silicon nitride oxide (SiON), and the like. .
- the optical adjustment layer may consist of one layer, or may consist of two or more layers. It may also be a mixture of any two or more of the above materials.
- the optical adjustment layer includes a SiOC film, a SiOC/ SiO2 laminated film in which the SiOC film and the SiO2 film are laminated in this order from the main material side, and a TiO2 film and a SiO2 film in this order from the main material side. and a SnO 2 /SiO 2 laminated film in which the SnO 2 film and the SiO 2 film are laminated in this order from the main material side.
- the optical adjustment layer preferably contains silicon, and is a group consisting of a SiOC film, a SiOC/SiO 2 laminated film, a TiO 2 /SiO 2 laminated film, and a SnO 2 /SiO 2 laminated film. and more preferably comprising a SiOC film.
- the amount of silicon contained in the entire optical adjustment layer is preferably in the range of 5 to 40 mol%, more preferably 10 to 33 mol%.
- the thickness of the optical adjustment layer is preferably 20-100 nm. When the thickness of the optical adjustment layer is 20 nm or more, the surface of the main material can be uniformly coated. A desired effect can be exhibited as an adjustment layer.
- the thickness of the optical adjustment layer is preferably 20 nm or more, more preferably 25 nm or more, still more preferably 30 nm or more, and preferably 100 nm or less, more preferably 90 nm or less, and even more preferably 80 nm or less.
- the "thickness" of the optical adjustment layer is represented by the total thickness of each layer.
- the laminated film-coated base material of the present invention may have other layers as long as the effects of the present invention are not impaired.
- Other layers include an overcoat layer and the like.
- the laminated film-coated substrate of the present invention preferably has an in-plane reflection color variation ⁇ C (ie, reflection color variation) measured at an incident angle of 30 degrees using a D65 light source within 2.25. It is considered that the main cause of color spots in the base material with the laminated film is the film thickness distribution of the infrared reflective layer.
- FIG. 3 shows the mechanism of color spots in a laminated structure of an infrared reflective layer (eg, FTO film) and a heat ray absorbing layer (eg, ATO film).
- an infrared reflective layer eg, FTO film
- a heat ray absorbing layer eg, ATO film
- reflected light paths There are three reflected light paths: a reflected light path B and a reflected light path C that passes through the infrared reflecting layer 5 and the heat absorbing layer 3 and is reflected at the interface with the optical adjustment layer 7 . These reflected lights interfere with each other to determine the reflected color.
- a reflected light path B and a reflected light path C that passes through the infrared reflecting layer 5 and the heat absorbing layer 3 and is reflected at the interface with the optical adjustment layer 7 .
- These reflected lights interfere with each other to determine the reflected color.
- the thickness of the infrared reflective layer 5 fluctuates in the plane of the base material 20 with a laminated film
- color spots occur because the interference wavelength between the reflected light path A and the reflected light path B changes, and the thickness of the heat ray absorbing layer 3 fluctuates.
- the interference wavelengths of the reflected light path B and the reflected light path C change, so color spots occur.
- antimony-doped tin oxide film ATO film
- antimony easily absorbs visible light.
- the intensity is weak, the effect of interference between the reflected light path B and the reflected light path C is weak, and the effect on color spots is small.
- the variation ⁇ C of the reflected color by the measurement is within 2.25, even when the substrate with the laminated film has a large area of 0.5 m 2 or more, the variation of the reflected color in the plane can be suppressed, and the color spotting. It can suppress the occurrence.
- the variation ⁇ C of the reflected color by the measurement is more preferably within 2.1, still more preferably within 2.0, and particularly preferably within 1.8.
- the lower limit is not particularly limited, but it is preferably 0.1 or more, more preferably 0.2 or more, and even more preferably 0.3 or more.
- ⁇ C can be obtained by measuring the distribution of reflected colors (a * , b * ) viewed from the infrared reflective layer side of the base material with the laminated film.
- the light source is a D65 light source, both the incident angle and the reflection angle are set to 30 degrees with respect to the base material with the laminated film, and the light is irradiated from the main material side of the base material with the laminated film.
- the spot size of the light source is adjusted to about 1 to 4 cm 2 on the surface of the main material, and the reflection spectrum is measured at intervals of 3 cm in the plane of the main material.
- the reflected color (a * , b * ) at each measurement point is calculated from the obtained spectrum.
- the Euclidean distance ⁇ C 12 ((a 1 * -a 2 * ) 2 +(b 1 * -b 2 * ) 2 ) 0.5 on the color coordinates is the maximum ( A combination of a 1 * , b 1 * ) and (a 2 * , b 2 * ) is selected, and its ⁇ C 12 is defined as the reflection color variation ⁇ C of the base material with the laminated film.
- the base material with the laminated film has a reflectance of 20% or less on the infrared reflective layer side surface.
- the reflectance is more preferably 18% or less, even more preferably 16% or less, and particularly preferably 14% or less.
- the lower limit of reflectance is not specified, it is more preferably 0.5% or more, still more preferably 1.0% or more, and particularly preferably 1.5% or more.
- the reflectance of the laminated film-coated substrate can be measured by the method described in ISO9050:2003.
- the laminated film-attached substrate preferably has a visible light transmittance of 70% or less.
- the transmittance is more preferably 60% or less, more preferably 55% or less, particularly preferably 45% or less, even more preferably 35% or less, and most preferably 30% or less.
- the lower limit of the transmittance is not specified, it is more preferably 0.5% or more, still more preferably 1% or more, and particularly preferably 1.5% or more.
- the transmittance of the base material with laminated film can be measured by the method described in ISO9050:2003.
- FIG. 4 schematically shows an example of the flow of the method for manufacturing the substrate 10 with a laminated film.
- the method for producing a laminated film-attached base material of the present invention comprises: (a) placing a heat-absorbing layer on the first surface of the main material (step S1); (b) placing an infrared reflective layer on the heat absorbing layer (step S2); have
- Step S1 the main material is prepared.
- the type of main material is not particularly limited.
- soda lime silicate-based high-transmittance glass may be used.
- step S1 a heat ray absorbing layer is arranged on the first surface of the main material.
- the heat ray absorbing layer can be formed using various film forming methods such as chemical vapor deposition (CVD), electron beam deposition, vacuum deposition, sputtering, and spraying.
- CVD chemical vapor deposition
- electron beam deposition electron beam deposition
- vacuum deposition vacuum deposition
- sputtering sputtering
- spraying a thermal CVD method is preferable because a high-temperature process is required to increase the crystal grain size.
- a large-scale vacuum apparatus becomes unnecessary, and the productivity can be further improved.
- the heat ray absorbing layer is formed by thermal CVD, a mixture of an inorganic or organic tin compound and an antimony compound is used as the raw material.
- Tin compounds include monobutyltin trichloride ( C4H9SnCl3 ) and tin tetrachloride ( SnCl4 ).
- tin compound an organic tin compound is particularly preferable.
- an inorganic tin compound is used as the tin compound, the growth rate of crystal grains is high, and the surface tends to become uneven.
- Antimony compounds include antimony trichloride (SbCl 3 ) and antimony pentachloride (SbCl 5 ).
- Antimony trichloride is particularly preferred as the antimony compound.
- antimony trichloride reacts violently with water in the source gas to produce particle clusters of antimony trioxide (Sb 2 O 3 ) and antimony pentoxide (Sb 2 O 5 ) in the gas phase. Therefore, by including those particle clusters in the film, the degree of unevenness of the surface can be controlled.
- the ratio of the antimony compound and the tin compound is adjusted, the film formation temperature, etc. are adjusted.
- the raw material gases may be mixed in advance and then transported.
- the raw material gases may be mixed on the surface of the main material to be deposited.
- the raw material may be vaporized into a gas by using a bubbling method, a vaporizer, or the like.
- the amount of water to 1 mol of the tin compound in the source gas is preferably 5 to 50 mol. If the amount of water is less than 5 mol, the resistance value of the film to be formed tends to increase, resulting in a decrease in the heat ray absorbing function. In addition, the number of starting points for nucleation is reduced, and as a result, crystal grains tend to grow larger, and the surface tends to become rougher. On the other hand, if the amount of water exceeds 50 moles, the volume of the raw material gas increases as the amount of water increases, and the flow rate of the raw material gas increases, which may reduce the film deposition efficiency. In addition, the number of starting points for nucleation increases, and as a result, crystal grains tend to grow smaller and the surface tends to become flat.
- the amount of oxygen per 1 mol of the tin compound in the source gas is preferably more than 0 mol and 40 mol or less, more preferably 4 to 40 mol. If the amount of oxygen is too small, the resulting film may have an increased resistance value, so it is more preferably 4 mol or more. On the other hand, if the amount of oxygen exceeds 40 mol, the volume of the raw material gas increases and the flow rate of the raw material gas increases, which may reduce the film deposition efficiency.
- the molar ratio of the antimony compound to the tin compound in the range of 1:100 to 3:1.
- the temperature of the main material when forming the heat-absorbing layer is preferably 500°C to 650°C. If the temperature of the glass is less than 500°C, the formation speed of the heat-absorbing layer may decrease. In addition, the precursor generated by the decomposition of the raw material gas diffuses faster on the surface of the glass and the heat-absorbing layer than reacts on the surface of the glass and the heat-absorbing layer. As a result, more of the precursor flows into the irregularities on the surface of the glass and the heat-absorbing layer, which tends to flatten the surface. On the other hand, if the temperature of the glass exceeds 650° C., film formation is performed in a state in which the viscosity of the glass is low.
- reaction rate of the precursor on the surface of the glass and the heat-absorbing layer is higher than the diffusion rate of the precursor on the surface of the glass and the heat-absorbing layer.
- the precursor tends to flow less into the irregularities on the surface of the glass and the heat-absorbing layer, and the irregularities on the surface tend to increase.
- the temperature of the main material when forming the heat-absorbing layer is preferably 30 to 400°C.
- the thickness of the heat absorption layer is 100-300 nm or 425-1000 nm.
- the film thickness of the heat ray absorbing layer can be adjusted by adjusting the supply amount of the raw material, the substrate transport speed, the film forming temperature, the spraying flow rate, the distance between the film forming apparatus and the substrate, and the like.
- Step S2 an infrared reflective layer is formed on the heat absorbing layer.
- the infrared reflective layer can be formed using various film-forming methods such as chemical vapor deposition (CVD), electron beam deposition, vacuum deposition, sputtering, and spraying. .
- CVD chemical vapor deposition
- the thermal CVD method is preferable because a high-temperature process is necessary to increase the infrared reflectivity by increasing the crystal grain size and increasing the electron mobility.
- a large-scale vacuum apparatus becomes unnecessary, and the productivity can be further improved.
- the infrared reflective layer is, for example, fluorine-doped tin oxide (FTO), antimony-doped tin oxide (ATO), tin-doped indium oxide (ITO), gallium-doped zinc oxide (GZO), aluminum-doped zinc oxide (AZO), as described above. etc., can be configured using various thin film materials.
- FTO fluorine-doped tin oxide
- ATO antimony-doped tin oxide
- ITO tin-doped indium oxide
- GZO gallium-doped zinc oxide
- AZO aluminum-doped zinc oxide
- the infrared reflective layer is composed of, for example, fluorine-doped tin oxide (FTO) or antimony-doped tin oxide (ATO), the unevenness of the surface of the infrared reflective layer can be increased, and the color tone can be adjusted within a predetermined range.
- FTO fluorine-doped tin oxide
- ATO antimony-doped tin oxide
- the infrared reflective layer is composed of, for example, aluminum-doped zinc oxide (AZO) or gallium-doped zinc oxide (GZO), the crystal orientation tends to be uniform and the surface tends to be flat.
- AZO aluminum-doped zinc oxide
- GZO gallium-doped zinc oxide
- tin-doped indium oxide has a strong function of reflecting infrared rays, and is often used in a film thickness range of around 100 nm. Therefore, when the infrared reflective layer is made of tin-doped indium oxide (ITO), it may be difficult to adjust the color tone of the reflected color within a predetermined range, resulting in insufficient crystal grain growth and surface roughness. It tends to be flat.
- the infrared reflective layer is composed of a fluorine-doped tin oxide layer (FTO)
- the infrared reflective layer may be deposited by atmospheric pressure CVD.
- a mixture of an inorganic or organic tin compound and a fluorine compound is used as the raw material.
- Tin compounds include monobutyltin trichloride (C 4 H 9 SnCl 3 ) and tin tetrachloride (SnCl 4 ), as described above.
- tin compound an organic tin compound is particularly preferable.
- an inorganic tin compound is used as the tin compound, the growth rate of crystal grains is high, and the surface tends to be rough.
- Fluorine compounds include hydrogen fluoride and trifluoroacetic acid.
- the infrared reflective layer is composed of an antimony-doped tin oxide layer (ATO)
- the infrared reflective layer may be deposited by atmospheric pressure CVD.
- a mixture of an inorganic or organic tin compound and an antimony compound is used as the raw material.
- an organic tin compound is particularly preferable.
- an inorganic tin compound is used as the tin compound, the growth rate of crystal grains is high, and the surface tends to be rough.
- Antimony compounds include antimony trichloride (SbCl 3 ) and antimony pentachloride (SbCl 5 ).
- Antimony trichloride is particularly preferred as the antimony compound.
- antimony trichloride reacts violently with water in the source gas to produce particle clusters of antimony trioxide (Sb 2 O 3 ) and antimony pentoxide (Sb 2 O 5 ) in the gas phase. Therefore, by including those particle clusters in the film, the degree of unevenness of the surface can be controlled.
- the concentration of antimony in the infrared reflective layer is preferably in the range of more than 0 mol % and 3 mol % or less in order to obtain a heat insulating effect.
- the infrared reflective layer is composed of gallium-doped zinc oxide (GZO), trimethylgallium (Ga(CH 3 ) 3 ) and trimethylaluminum (Al(CH 3 ) 3 ) are used as raw materials.
- the infrared reflective layer is composed of aluminum-doped zinc oxide (AZO), trimethylaluminum and diethylzinc Zn( C2H5 ) 2 are used as raw materials.
- the infrared reflective layer is composed of tin-doped indium oxide (ITO), indium acetylacetonate (In(C 5 H 7 O 2 ) 3 ), tin acetylacetonate (Sn(C 5 H 7 O 2 ) 2 ) is used.
- ITO tin-doped indium oxide
- In(C 5 H 7 O 2 ) 3 indium acetylacetonate
- Sn(C 5 H 7 O 2 ) 2 tin acetylacetonate
- the raw material gases may be mixed in advance and then transported.
- the raw material gases may be mixed on the surface of the film-forming object (specifically, the heat-absorbing layer).
- the raw material may be vaporized into a gas by using a bubbling method, a vaporizer, or the like.
- the amount of water to 1 mol of the tin compound or zinc compound in the source gas is preferably 5 to 50 mol. If the amount of water is less than 5 mol, the resistance value of the film to be formed tends to increase, resulting in a decrease in the infrared reflecting function. In addition, the number of starting points for nucleation is reduced, and as a result, crystal grains tend to grow larger, and the surface tends to become rougher. On the other hand, if the amount of water exceeds 50 moles, the volume of the raw material gas increases as the amount of water increases, and the flow rate of the raw material gas increases, which may reduce the film deposition efficiency. In addition, the number of starting points for nucleation increases, and as a result, crystal grains tend to grow smaller and the surface tends to become flat.
- the amount of oxygen per 1 mol of the tin compound or zinc compound in the source gas is preferably more than 0 mol and 40 mol or less, more preferably 4 to 40 mol. If the amount of oxygen is less than 4 moles, the resistance of the resulting film may increase. On the other hand, if the amount of oxygen exceeds 40 mol, the volume of the raw material gas increases and the flow rate of the raw material gas increases, which may reduce the film deposition efficiency.
- the amount of the fluorine compound relative to 1 mol of the tin compound in the source gas is preferably 0.1 to 1.2 mol.
- the resistance value of the formed film tends to increase.
- the temperature for forming the infrared reflective layer is preferably 500° C. to 650° C. when a glass plate is used as the main material. If the treatment temperature is lower than 500°C, the formation speed of the infrared reflective layer may decrease. In addition, the precursor generated by the decomposition of the raw material gas diffuses faster on the surface of the glass and the infrared reflective layer than it reacts on the surface of the glass and the infrared reflective layer. As a result, more of the precursor flows into the surface irregularities of the glass and the infrared reflective layer, tending to flatten the surface.
- the processing temperature is higher than 650° C.
- film formation is performed while the viscosity of the glass is low, and warping may occur in the process of cooling the glass to room temperature.
- the reaction speed of the precursor on the surface of the glass and the infrared reflective layer is higher than the speed of diffusion on the surface of the glass and the infrared reflective layer. As a result, the precursor tends to flow less into the irregularities on the surface of the glass and the infrared reflective layer, and the irregularities on the surface tend to increase.
- the processing temperature for forming the infrared reflective layer is preferably 30 to 400°C.
- steps S1 and S2 may be performed by an online method during the process of producing glass using a float facility.
- film formation may be performed by reheating the glass plate manufactured by the float method by an off-line method.
- the optical adjustment layer when an optical adjustment layer is provided between the main material and the heat absorbing layer, the optical adjustment layer is arranged on the first surface of the main material before step S1.
- the optical adjustment layer is formed using various film formation methods such as chemical vapor deposition (CVD), electron beam evaporation, vacuum deposition, sputtering, and spraying. can be formed.
- CVD chemical vapor deposition
- electron beam evaporation electron beam evaporation
- vacuum deposition vacuum deposition
- sputtering sputtering
- spraying spraying
- the optical adjustment layer can be configured using various thin film materials such as SiOC, SiO2 , TiO2 , SnO2 , etc., as described above. Also, the optical adjustment layer may consist of one layer, or may be a laminate of two or more layers.
- the optical adjustment layer when the optical adjustment layer includes a silicon carbide oxide (SiOC) layer, the optical adjustment layer may be deposited by atmospheric pressure CVD.
- a mixed gas containing monosilane (SiH 4 ), ethylene and carbon dioxide can be used as the raw material.
- SiH 4 monosilane
- ethylene and carbon dioxide when such a carbon-containing gas is used, it becomes easy to form a particulate silicon compound together with a film-like silicon compound, thereby increasing the haze ratio.
- the raw material gases may be mixed in advance and then conveyed onto the first surface of the main member. Alternatively, the raw material gases may be mixed on the first surface of the main material.
- the optical adjustment layer includes a silicon oxide (SiO 2 ) layer
- mixed gases such as monosilane (SiH 4 ), tetraethoxysilane, and oxygen can be used as raw materials.
- examples of raw materials include tetraisopropyl orthotitanate (TTIP) and titanium tetrachloride. Among them, tetraisopropyl orthotitanate (TTIP) is more preferable.
- the temperature of the main material when forming the optical adjustment layer is preferably 500°C to 900°C. If the temperature of the main material is less than 500°C or more than 900°C, the film formation rate tends to decrease.
- the overcoat layer is arranged on the surface of the infrared reflective layer after step S2.
- the overcoat layer is formed, for example, by a wet method.
- a coating solution for the overcoat layer is prepared.
- the coating solution contains a metal oxide precursor, an organic solvent, and water. Particles and/or solids may also be added to the coating solution.
- the composition of the particles may be the same as or different from the metal oxide precursor.
- a coating solution is applied onto the infrared reflective layer of the laminated film-coated substrate.
- the coating method is not particularly limited, and a common means such as spin coating may be used.
- the laminated film-coated substrate on which the coating solution is applied is heat-treated in the air.
- the temperature of the heat treatment is, for example, in the range of 80.degree. C. to 650.degree.
- the heating time is, for example, in the range of 5 minutes to 360 minutes.
- the heat treatment may be performed using a common device such as a hot air circulation furnace or an IR heater furnace.
- An overcoat layer may also be formed from the coating solution by UV curing treatment, microwave treatment, or the like.
- an overcoat layer can be formed on the infrared reflective layer.
- the above heat treatment does not necessarily have to be performed at this stage. That is, the coating solution may be heated using a heating step that is performed in separate stages.
- the substrate with a laminated film of the present invention can be produced.
- the method for producing a base material with a laminated film of the present invention may further include a step (strengthening step) of air-cooling strengthening or chemical strengthening of the main material.
- This strengthening step may be performed in any order, for example, before step S1 or after manufacturing the base material with the laminated film.
- the obtained base material with the laminated film may be subjected to bending.
- a step of bonding another glass plate on the glass plate side surface may be carried out.
- the substrate with a laminated film of the present invention has color tone robustness, even when the substrate has a large area of 0.5 m 2 or more, the in-plane reflection color variation is suppressed and color spots are reduced. can. Therefore, it can be used for applications that use a base material that is relatively large.
- the laminated film-coated substrate of the present invention can be used, for example, for vehicle window glass (front glass, rear glass, side glass, roof glass, etc.), building window glass, and the like.
- vehicle window glass front glass, rear glass, side glass, roof glass, etc.
- building window glass and the like.
- a base material with a laminated film comprising a main material and a laminated film disposed on the main material, the main material having a first surface and a second surface facing each other,
- the laminated film is provided on the first surface of the main material, the laminated film has a heat absorption layer and an infrared reflective layer in this order from the side close to the main material, and the heat absorption layer is antimony-doped tin oxide.
- a base material with a laminated film formed of a film wherein the concentration of antimony contained in the heat ray absorption layer is 3 to 14 mol %, and the thickness of the heat ray absorption layer is 100 to 300 nm or 425 to 1000 nm.
- the infrared reflective layer comprises at least one metal oxide film selected from the group consisting of fluorine-doped tin oxide, antimony-doped tin oxide, tin-doped indium oxide, gallium-doped zinc oxide, and aluminum-doped zinc oxide.
- ⁇ 5> The substrate with a laminated film according to any one of ⁇ 1> to ⁇ 4>, wherein the main material is glass.
- the laminated film further includes an optical adjustment layer, and the optical adjustment layer is disposed between the main material and the heat ray absorbing layer.
- the optical adjustment layer has at least one film selected from the group consisting of a SiOC film, a SiOC/SiO 2 laminated film, a TiO 2 /SiO 2 laminated film, and a SnO 2 /SiO 2 laminated film. 6>, the laminated film-attached substrate.
- Example 1 When a thin film is formed on a glass plate using the CVD method, the film thickness varies within the surface, resulting in color spots.
- the infrared reflective layer is composed of a fluorine-doped tin oxide film (SnO 2 :F, FTO), and the heat ray absorbing layer is composed of an antimony-doped tin oxide film (SnO 2 :Sb, ATO).
- SnO 2 :F, FTO fluorine-doped tin oxide film
- SnO 2 :Sb, ATO antimony-doped tin oxide film
- the reflection spectrum was calculated using Fresnel's formula from the experimentally derived optical constants (refractive index and extinction coefficient) of the ATO film and the FTO film.
- the a * value was calculated from the obtained reflectance spectrum based on the definition of JIS (JIS Z 8781-4:2013).
- the optical constants of the ATO film and the FTO film were measured by forming the ATO film and the FTO film on a glass substrate and measuring them with a spectroscopic ellipsometer J.M.
- Spectroscopic ellipsometry was measured using Woollam's "M-2000 DI" (apparatus name), and analysis software J.M. A. Derived using WVASE 32 manufactured by Woollam.
- the size of color mottling was defined as the size of change in film surface reflection color (reflection color change ⁇ C) on Lab coordinates when the film thickness of the FTO film fluctuated by 5 nm.
- the heat ray absorbing layer contains antimony, the reflected light path B passing through the infrared reflecting layer 5 and reflected at the interface with the heat ray absorbing layer 3, the infrared reflecting layer 5, and the heat absorbing layer 3 shown in FIG.
- the interference with the reflected light path C that passes through and is reflected at the interface with the optical adjustment layer 7 is weak, and the effect on color spots is small.
- the optical simulation was performed using a D65 light source as the light source, with both the incident angle and the reflection angle of 30 degrees.
- Examples 1-18 The method for producing the laminated film-attached substrates of Examples 1 to 18 having the configurations shown in Table 1 is as follows. First, a glass substrate (soda lime silicate glass: manufactured by AGC Co., Ltd.) having a thickness of 2.1 mm and an area of 1 m 2 was prepared. form a film. Monosilane, ethylene, and carbon dioxide are used as raw material gases, and nitrogen is used as a carrier gas. Next, an antimony-doped tin oxide film (SnO 2 :Sb, ATO) is formed as a heat absorption layer on the SiOC layer by CVD.
- SnO 2 :Sb, ATO antimony-doped tin oxide film
- Monobutyltin trichloride (C 4 H 9 SnCl 3 , MBTC), antimony trichloride (SbCl 3 ), water, air, and hydrogen chloride are used as source gases, and nitrogen is used as carrier gas.
- the thickness (maximum thickness) of the heat ray absorbing layer is a predetermined thickness of 200 to 700 nm.
- a fluorine-doped tin oxide film (SnO 2 :F, FTO) is formed as an infrared reflective layer on the heat absorbing layer by CVD.
- Monobutyltin trichloride (C 4 H 9 SnCl 3 , MBTC), water, air, trifluoroacetic acid (FTO), and nitric acid are used as source gases, and nitrogen is used as carrier gas.
- the thickness (maximum thickness) of the infrared reflective layer is a predetermined thickness of 120 to 300 nm. Thereby, a base material with a laminated film is obtained.
- each layer of the laminated film-coated base material is a value measured by the following measurement methods.
- ⁇ Measurement of thickness of each layer> The film-coated substrate is cut in the thickness direction, and the cross section is observed with a scanning electron microscope (SEM, "SU 70" manufactured by Hitachi, Ltd.).
- SEM scanning electron microscope
- the film thickness of each layer is checked directly from the SEM image.
- the film thickness of each layer is derived using the middle line between the horizontal lines of the lowest valley and the highest peak as a guideline. If the observation magnification is too low, the accuracy of film thickness measurement will be insufficient. exists.
- an electron gun of 1.5 kV, a working distance of 2.4 mm, and a magnification of 50,000 are adopted. If the interface between the heat absorption layer and the infrared reflection layer cannot be confirmed by SEM observation, after examining the sum of the thickness of the heat absorption layer and the infrared reflection layer from the SEM image, the depth direction by X-ray photoelectron spectroscopy (XPS) was used to examine the thickness ratio of the heat-absorbing layer and the infrared-reflecting layer. The depth direction analysis is performed by XPS measurement while etching the film using Ar sputtering in an XPS chamber with a degree of vacuum of 10 ⁇ 6 Pa.
- XPS X-ray photoelectron spectroscopy
- the X-ray irradiation area was 100 ⁇ m ⁇ , and the X-ray irradiation angle was 45 deg. fixed to Since the heat-absorbing layer in this example is an ATO (antimony-doped tin oxide) film, the point (time) at which the Sb molar ratio obtained by XPS depth profile analysis begins to increase with respect to the etching time and the point at which the increase ends The middle point (time) at which the slope becomes approximately zero is set as the interface between the heat ray absorbing layer and the infrared reflective layer.
- ATO antimony-doped tin oxide
- the optical adjustment layer in this example is a SiOC film
- the cross point at which the molar ratio of Sn and Si exhibits the same value is set as the interface between the heat ray absorption layer and the optical adjustment layer. According to this method, it is possible to derive the film thickness of each layer with high reproducibility while referring to the etching rates of the heat ray absorbing layer and the infrared reflecting layer, which have been measured in advance for single-layer film products.
- the composition is calculated from the X-ray peak intensity using software PHI MULTIPAC manufactured by ULVAC.
- the electronic information of the O1s, Si2p, Sn3d5, and Sb3d3 orbitals was referred to. is calibrated by subtracting 1.5 times from the peak intensity of O1s.
- "PHI 5000 Versa Probe" manufactured by ULVAC-PHI was used.
- the antimony concentration is analyzed in the depth direction by X-ray photoelectron spectrometry (XPS) and examined from the intensity ratio of Sb and Sn.
- XPS X-ray photoelectron spectrometry
- PHI 5000 Versa Probe manufactured by ULVAC-PHI is used.
- the antimony concentration may be distributed in the film thickness direction of the heat ray absorbing layer. In that case, the average value in the depth direction is used as the antimony concentration.
- ⁇ Measurement of reflected color variation ( ⁇ C)> In order to calculate the size of color spots, the distribution of reflected colors (a * , b * ) viewed from the glass substrate side of the laminated film-coated substrate is measured. A D65 light source was used as the light source, and both the incident angle and the reflection angle were set at 30 degrees with respect to the laminated film-coated substrate, and the light was irradiated from the glass surface side of the laminated film-coated substrate. The spot size of the light source was adjusted to about 1 cm 2 on the glass surface, and the reflection spectrum was measured at intervals of 3 cm in the plane of the glass substrate. The reflected color (a * , b * ) at each measurement point is calculated from the obtained spectrum.
- the Euclidean distance ⁇ C 12 ((a 1 * -a 2 * ) 2 +(b 1 * -b 2 * ) 2 ) 0.5 on the color coordinates is the maximum ( A combination of a 1 * , b 1 * ) and (a 2 * , b 2 * ) is selected, and its ⁇ C 12 is defined as the reflection color variation ⁇ C of the base material with the laminated film.
- the chromaticity of the film-coated substrate is measured using a spectrophotometer (“CM-2500d” manufactured by Konica Minolta, Inc.).
- the reflectance of the substrate with the laminated film on the side of the infrared reflective layer is measured by the method described in ISO9050:2003.
- the transmittance of the laminated film-attached substrate is measured by the method described in ISO9050:2003.
- Table 1 shows the results of the optical simulation.
- Examples 19-23 Base materials with laminated films of Examples 19 to 23 having the configurations shown in Table 2 were produced.
- a glass substrate sida lime silicate glass: manufactured by AGC Co., Ltd.
- a SiOC layer was formed as an optical adjustment layer on the glass substrate by a CVD method.
- Monosilane, ethylene, and carbon dioxide were used as raw material gases, and nitrogen was used as a carrier gas.
- the target thickness of the SiOC layer was set to 70 nm.
- an antimony-doped tin oxide film SnO 2 :Sb, ATO
- Monobutyltin trichloride C 4 H 9 SnCl 3 , MBTC
- antimony trichloride SbCl 3
- water, air, and hydrogen chloride were used as source gases, and nitrogen was used as carrier gas.
- the target thickness (maximum thickness) of the heat ray absorbing layer was 350 to 630 nm.
- a fluorine-doped tin oxide film SnO 2 :F, FTO was formed as an infrared reflective layer on the heat ray absorbing layer by the CVD method.
- Monobutyltin trichloride C 4 H 9 SnCl 3 , MBTC
- water, air, trifluoroacetic acid (FTO), and nitric acid were used as source gases, and nitrogen was used as carrier gas.
- the target thickness (maximum thickness) of the infrared reflective layer was 175 to 300 nm. Thus, a laminated film-attached base material was obtained.
- the concentration of antimony and the film thickness were measured by the measurement method described in Experimental Example 1, and the reflection spectra of the optical simulation and the actually measured reflection spectra were compared.
- Reflectance spectra for optical simulation were obtained by the method described in Experimental Example 1.
- the actually measured reflection spectrum was measured using Lambda950 manufactured by PerkinElmer.
- the reflection spectrum of the optical simulation and the measured reflection spectrum are similar, and the peak wavelength is also similar, so the reflectance of the substrates with laminated films of Examples 1 to 18 evaluated in Experimental Example 1, It can be judged that the measured values of the transmittance and the reflected color variation ⁇ C are equivalent to the simulation results.
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Abstract
Description
(1)主材と前記主材上に配置される積層膜とを備えた積層膜付き基材であって、
前記主材は相互に対向する第1の面及び第2の面を有し、前記主材の前記第1の面に前記積層膜が設置され、
前記積層膜は、前記主材に近い側から、熱線吸収層と赤外線反射層を有し、
前記熱線吸収層はアンチモンドープ酸化スズ膜より形成され、前記熱線吸収層に含まれるアンチモンの濃度が3~14mol%であり、且つ、前記熱線吸収層の厚さが100~300nmもしくは425~1000nmである積層膜付き基材。 The present invention consists of the following configurations.
(1) A laminated film-attached base material comprising a main material and a laminated film disposed on the main material,
The main member has a first surface and a second surface facing each other, and the laminated film is provided on the first surface of the main member,
The laminated film has a heat ray absorbing layer and an infrared reflective layer from the side closer to the main material,
The heat ray absorbing layer is formed of an antimony-doped tin oxide film, the concentration of antimony contained in the heat ray absorbing layer is 3 to 14 mol%, and the thickness of the heat ray absorbing layer is 100 to 300 nm or 425 to 1000 nm. A substrate with a laminated film.
また、本明細書において、「質量」は「重量」と同義である。 The present invention will be described below, but the present invention is not limited by the exemplifications in the following description.
Moreover, in this specification, "mass" is synonymous with "weight".
図1に示したように、本発明の積層膜付き基材10は、主材1と該主材1上に配置される積層膜2とを備えている。主材1は相互に対向する第1の面1a及び第2の面1bを有し、主材1の第1の面1aに積層膜2が設置されている。
積層膜2は、主材1に近い側から、熱線吸収層3と赤外線反射層5を有する。熱線吸収層3はアンチモンドープ酸化スズ膜より形成され、熱線吸収層3に含まれるアンチモンの濃度は3~14mol%であり、且つ、熱線吸収層3の厚さは100~300nmもしくは425~1000nmである。 FIG. 1 is a cross-sectional view for explaining the configuration of the laminated film-attached base material of the present invention.
As shown in FIG. 1, the laminated film-attached
The laminated
主材1は、積層膜付き基材10の骨格となり、自己支持性を有するものである。
主材を構成する材料としては、例えば、ガラス、樹脂等が挙げられる。 (main material)
The
Materials constituting the main material include, for example, glass and resin.
例えば、積層膜付き基材を車両に利用する場合、主材はガラス板を用い、ガラス板の厚さは1mm~5mm、ガラス板の主面の面積は0.5~5m2であるのが好ましい。また、積層膜付き基材を建築物に利用する場合、主材はガラス板を用い、ガラス板の厚さは4mm~8mm、ガラス板の主面の面積は0.5~10m2であるのが好ましい。 The size of the main material is not particularly limited, and may be appropriately adjusted according to the application and purpose of use of the base material with a laminated film.
For example, when a substrate with a laminated film is used in a vehicle, a glass plate is used as the main material, the thickness of the glass plate is 1 mm to 5 mm, and the area of the main surface of the glass plate is 0.5 to 5 m 2 . preferable. When the base material with laminated film is used in a building, a glass plate is used as the main material, the thickness of the glass plate is 4 mm to 8 mm, and the area of the main surface of the glass plate is 0.5 to 10 m 2 . is preferred.
熱線吸収層3は、アンチモンドープ酸化スズ(ATO、SnO2にSbを添加した金属酸化物)膜により構成される。熱線吸収層にアンチモン(Sb)を含有することで、基材の内部に伝わる熱の量を小さくして、積層膜付き基材に遮熱性を与えられる。
熱線吸収層は、1層のアンチモンドープ酸化スズ膜からなるものであってもよいし、アンチモンの濃度が異なる2層以上のアンチモンドープ酸化スズ膜からなるものであってもよい。 (Heat absorption layer)
The
The heat absorbing layer may be composed of one layer of antimony-doped tin oxide film, or may be composed of two or more layers of antimony-doped tin oxide films having different antimony concentrations.
熱線吸収層に含まれるアンチモンの濃度は、4mol%以上であるのが好ましく、5mol%以上がより好ましく、6mol%がさらに好ましく、また13mol%以下であるのが好ましく、12mol%以下がより好ましく、11mol%以下がさらに好ましい。 In the present invention, the concentration of antimony contained in the heat-absorbing layer is 3-14 mol %. When the concentration of antimony contained in the heat ray absorbing layer is 3 mol% or more, the heat shielding effect can be exhibited, and the base material with the laminated film can have color tone robustness. Since the refractive index difference of the reflective layer is small and the reflection at the interface does not increase, robustness can be ensured.
The concentration of antimony contained in the heat-absorbing layer is preferably 4 mol% or more, more preferably 5 mol% or more, still more preferably 6 mol%, preferably 13 mol% or less, more preferably 12 mol% or less, 11 mol % or less is more preferable.
例えば、X線光電子分光法(XPS)による深さ方向の分析を行い、SbとSnの強度比から調べられる。 The concentration of antimony contained in the heat absorption layer can be identified by X-ray photoelectron spectroscopy (XPS) or secondary ion mass spectroscopy (SIMS).
For example, analysis in the depth direction is performed by X-ray photoelectron spectroscopy (XPS), and the intensity ratio between Sb and Sn can be examined.
熱線吸収層の厚さは、100~300nmの範囲の厚みにおいては、120nm以上であるのが好ましく、150nm以上がより好ましく、200nm以上がさらに好ましく、また290nm以下であるのが好ましく、280nm以下がより好ましい。そして、425~1000nmの範囲の厚みにおいては、450nm以上であるのが好ましく、470nm以上がより好ましく、また900nm以下であるのが好ましく、800nm以下がより好ましい。 Further, in the present invention, the thickness of the heat absorption layer is 100-300 nm or 425-1000 nm. Tin oxide to which antimony has been added has a high absorption of visible light, and when the thickness of the heat ray absorbing layer is within the above range, interference of visible light in the heat ray absorbing layer can be suppressed, so color tone robustness can be obtained. . When the thickness of the heat absorption layer is more than 300 nm and less than 425 nm, the effect of the present invention cannot be obtained when the antimony concentration is 3 to 14 mol %. It is assumed that this is because interference of visible light occurs within the heat ray absorbing layer.
The thickness of the heat-absorbing layer is preferably 120 nm or more, more preferably 150 nm or more, still more preferably 200 nm or more, further preferably 290 nm or less, and 280 nm or less when the thickness is in the range of 100 to 300 nm. more preferred. The thickness in the range of 425 to 1000 nm is preferably 450 nm or more, more preferably 470 nm or more, and preferably 900 nm or less, more preferably 800 nm or less.
なお、熱線吸収層は、アンチモンと酸化スズの結晶粒により成膜されるので、主材側とは反対側の面に凹凸形状を有する。よって、熱線吸収層の「厚さ」は場所によって異なるが、本発明においては測定領域における熱線吸収層の最大厚さを表すものとする。 The thickness of the heat-absorbing layer can be measured by analysis in the depth direction using X-ray photoelectron spectroscopy (XPS).
Since the heat absorbing layer is formed of crystal grains of antimony and tin oxide, the surface opposite to the main material side has an uneven shape. Therefore, although the "thickness" of the heat ray absorbing layer varies depending on the location, in the present invention, it represents the maximum thickness of the heat ray absorbing layer in the measurement area.
赤外線反射層5は、赤外線を反射し、積層膜付き基材に断熱性を付与する層であり、熱線吸収層3に積層される。 (Infrared reflective layer)
The infrared
赤外線反射層を構成する材料としては、例えば、酸化スズ、酸化インジウム、酸化亜鉛、酸化チタン、酸化タンタル及び酸化ニオブからなる群から選択される少なくとも1つの金属酸化物に他の元素(不純物元素)をドープしたドープ型金属酸化物が挙げられる。
ドープさせる不純物元素としては、例えば、フッ素、アンチモン、スズ、カリウム、アルミニウム、タンタル、ニオブ、窒素、ホウ素、インジウム等が挙げられる。 The material constituting the infrared reflective layer is not particularly limited as long as it has a function of reflecting infrared rays.
Materials constituting the infrared reflective layer include, for example, at least one metal oxide selected from the group consisting of tin oxide, indium oxide, zinc oxide, titanium oxide, tantalum oxide, and niobium oxide, and other elements (impurity elements). doped metal oxides.
Impurity elements to be doped include, for example, fluorine, antimony, tin, potassium, aluminum, tantalum, niobium, nitrogen, boron, and indium.
赤外線反射層に含まれる不純物元素の濃度は、0.01mol%以上であるのが好ましく、0.1mol%以上がより好ましく、0.5mol%以上がさらに好ましく、また10mol%以下であるのがより好ましく、8mol%以下がさらに好ましく、5mol%以下が特に好ましい。
なお、不純物元素の濃度は、赤外線反射層中に複数の不純物元素を含む場合は、その総量である。 The content of impurity elements contained in the infrared reflective layer is preferably 0.01 to 20 mol % in concentration. When the concentration of the impurity element contained in the infrared reflective layer is 0.01 mol % or more, a heat insulating effect can be exhibited, and when it is 20 mol % or less, good crystallinity can be maintained.
The concentration of the impurity element contained in the infrared reflective layer is preferably 0.01 mol % or more, more preferably 0.1 mol % or more, still more preferably 0.5 mol % or more, and more preferably 10 mol % or less. It is preferably 8 mol % or less, more preferably 5 mol % or less.
In addition, the concentration of the impurity element is the total amount when the infrared reflective layer contains a plurality of impurity elements.
例えば、アンチモン(Sb)濃度は、X線光電子分光法(XPS)による深さ方向の分析を行い、SbとSnの強度比から調べられる。フッ素(F)濃度は、二次イオン質量分析法(SIMS)による深さ方向の分析を行い、FとSnの強度比から調べられる。なお、SIMSについては、濃度既知のフッ素添加錫SnO2を測定し、F/Snの強度比から濃度に変換する係数を求める必要がある。 The composition of the infrared reflective layer and the concentration of impurity elements can be identified by X-ray photoelectron spectroscopy (XPS) or secondary ion mass spectroscopy (SIMS).
For example, the antimony (Sb) concentration can be examined from the intensity ratio of Sb and Sn by analyzing the depth direction by X-ray photoelectron spectroscopy (XPS). The fluorine (F) concentration is analyzed in the depth direction by secondary ion mass spectrometry (SIMS), and can be examined from the intensity ratio of F and Sn. For SIMS, it is necessary to measure fluorine-added tin SnO 2 of known concentration and obtain a coefficient for converting the intensity ratio of F/Sn into concentration.
赤外線反射層の厚さは、75nm以上であるのがより好ましく、100nm以上がさらに好ましく、110nm以上が特に好ましく、また、380nm以下であるのがより好ましく、350nm以下がさらに好ましく、325nm以下が特に好ましい。 The thickness of the infrared reflective layer is preferably 50-400 nm. When the thickness of the infrared reflective layer is 50 nm or more, the heat insulation performance of the base material with the laminated film is improved, and when it is 400 nm or less, the transparency of the main material in the visible light region can be ensured.
The thickness of the infrared reflective layer is more preferably 75 nm or more, still more preferably 100 nm or more, particularly preferably 110 nm or more, more preferably 380 nm or less, even more preferably 350 nm or less, and particularly 325 nm or less. preferable.
赤外線反射層が異種材料の複層で構成される場合、赤外線反射層の「厚さ」は、各層の厚さの合計で表される。
なお、赤外線反射層は、金属酸化物の結晶粒により成膜され、また上記したように積層される熱線吸収層の表面は凹凸形状であるので、層の表面(すなわち、熱線吸収層側表面と該熱線吸収層とは反対側の表面)に凹凸形状を有する。よって、赤外線反射層の「厚さ」は場所によって異なるが、本発明においては測定領域における赤外線反射層の最大厚さを表すものとする。 The thickness of the infrared reflective layer can be measured by analysis in the depth direction by X-ray photoelectron spectroscopy (XPS) measurement, or the like.
When the infrared reflective layer is composed of multiple layers of different materials, the "thickness" of the infrared reflective layer is represented by the total thickness of each layer.
The infrared reflective layer is formed of metal oxide crystal grains, and the surface of the heat ray absorbing layer laminated as described above has an uneven shape. The surface opposite to the heat-absorbing layer) has an uneven shape. Therefore, although the "thickness" of the infrared reflective layer varies depending on the location, in the present invention it represents the maximum thickness of the infrared reflective layer in the measurement area.
本発明の積層膜付き基材は、図2に示すように、積層膜2がさらに光学調整層7を有していてもよい。積層膜付き基材20が光学調整層7を備える場合、光学調整層7は、主材1と熱線吸収層3との間に配置される。 (Optical adjustment layer)
In the laminated film-attached substrate of the present invention, the
中でも、アルカリバリア性の観点から、光学調整層にはケイ素が含まれることが好ましく、SiOC膜、SiOC/SiO2積層膜、TiO2/SiO2積層膜及びSnO2/SiO2積層膜からなる群から選択される少なくとも1つの膜を有するのがより好ましく、SiOC膜を備えているのがさらに好ましい。 Specifically, the optical adjustment layer includes a SiOC film, a SiOC/ SiO2 laminated film in which the SiOC film and the SiO2 film are laminated in this order from the main material side, and a TiO2 film and a SiO2 film in this order from the main material side. and a SnO 2 /SiO 2 laminated film in which the SnO 2 film and the SiO 2 film are laminated in this order from the main material side.
Above all, from the standpoint of alkali barrier properties, the optical adjustment layer preferably contains silicon, and is a group consisting of a SiOC film, a SiOC/SiO 2 laminated film, a TiO 2 /SiO 2 laminated film, and a SnO 2 /SiO 2 laminated film. and more preferably comprising a SiOC film.
光学調整層の厚さは、20nm以上であるのが好ましく、25nm以上がより好ましく、30nm以上がさらに好ましく、また、100nm以下であるのが好ましく、90nm以下がより好ましく、80nm以下がさらに好ましい。 The thickness of the optical adjustment layer is preferably 20-100 nm. When the thickness of the optical adjustment layer is 20 nm or more, the surface of the main material can be uniformly coated. A desired effect can be exhibited as an adjustment layer.
The thickness of the optical adjustment layer is preferably 20 nm or more, more preferably 25 nm or more, still more preferably 30 nm or more, and preferably 100 nm or less, more preferably 90 nm or less, and even more preferably 80 nm or less.
本発明の積層膜付き基材には、本発明の効果を損なわない範囲において、その他の層を備えていてもよい。
その他の層としては、オーバーコート層等が挙げられる。 (Other layers)
The laminated film-coated base material of the present invention may have other layers as long as the effects of the present invention are not impaired.
Other layers include an overcoat layer and the like.
本発明の積層膜付き基材は、30度の入射角でD65光源を用いて測定した面内の反射色の変動ΔC(すなわち、反射色のばらつき)が2.25以内であるのが好ましい。
積層膜付き基材における色斑は、赤外線反射層の膜厚分布が主たる原因であると考えられる。赤外線反射層(例えば、FTO膜)と熱線吸収層(例えば、ATO膜)の積層構成における色斑のメカニズムを図3に示す。図3に示す積層膜付き基材20においては、積層膜付き基材20の赤外線反射層5側表面で反射する反射光路A、赤外線反射層5を通過し熱線吸収層3との界面で反射する反射光路B、及び赤外線反射層5と熱線吸収層3を通過し光学調整層7との界面で反射する反射光路Cの3つの反射光の光路が存在する。そして、これらの反射光が干渉し、反射色が決まる。
積層膜付き基材20の面内で赤外線反射層5の膜厚が変動すると、反射光路Aと反射光路Bの干渉波長が変わるため色斑が発生し、熱線吸収層3の膜厚が変動すると、反射光路Bと反射光路Cの干渉波長が変わるため色斑が発生する。本願発明では、熱線吸収層にアンチモンドープ酸化スズ膜(ATO膜)を用いることで、アンチモンは可視光を吸収しやすいため、透過率の低い熱線吸収層を通過する反射光路Cの反射光はそもそも強度が弱く、反射光路Bと反射光路Cの干渉の効果は弱く、色斑への影響が小さくなる。 (Physical properties of substrate with laminated film)
The laminated film-coated substrate of the present invention preferably has an in-plane reflection color variation ΔC (ie, reflection color variation) measured at an incident angle of 30 degrees using a D65 light source within 2.25.
It is considered that the main cause of color spots in the base material with the laminated film is the film thickness distribution of the infrared reflective layer. FIG. 3 shows the mechanism of color spots in a laminated structure of an infrared reflective layer (eg, FTO film) and a heat ray absorbing layer (eg, ATO film). In the
When the thickness of the infrared
前記測定による反射色の変動ΔCは、2.1以内であるのがより好ましく、2.0以内がさらに好ましく、1.8以内が特に好ましい。また、ΔCは小さいほど色斑が抑えられるため下限値は特に限定されないが、0.1以上であるのが好ましく、0.2以上がより好ましく、0.3以上がさらに好ましい。 When the variation ΔC of the reflected color by the measurement is within 2.25, even when the substrate with the laminated film has a large area of 0.5 m 2 or more, the variation of the reflected color in the plane can be suppressed, and the color spotting. It can suppress the occurrence.
The variation ΔC of the reflected color by the measurement is more preferably within 2.1, still more preferably within 2.0, and particularly preferably within 1.8. In addition, since the smaller ΔC is, the more the color spots are suppressed, the lower limit is not particularly limited, but it is preferably 0.1 or more, more preferably 0.2 or more, and even more preferably 0.3 or more.
反射率は、18%以下であるのがより好ましく、16%以下がさらに好ましく、14%以下が特に好ましい。反射率の下限値は特に指定されないが、0.5%以上であるのがより好ましく、1.0%以上がさらに好ましく、1.5%以上が特に好ましい。 From the viewpoint of designability, it is preferable that the base material with the laminated film has a reflectance of 20% or less on the infrared reflective layer side surface.
The reflectance is more preferably 18% or less, even more preferably 16% or less, and particularly preferably 14% or less. Although the lower limit of reflectance is not specified, it is more preferably 0.5% or more, still more preferably 1.0% or more, and particularly preferably 1.5% or more.
透過率は、60%以下であるのがより好ましく、55%以下がさらに好ましく、45%以下が特に好ましく、35%以下が殊更に好ましく、30%以下が最も好ましい。透過率の下限値は特に指定されないが、0.5%以上であるのがより好ましく、1%以上がさらに好ましく、1.5%以上が特に好ましい。 The laminated film-attached substrate preferably has a visible light transmittance of 70% or less. When the transmittance is 70% or less, heat shielding properties can be ensured.
The transmittance is more preferably 60% or less, more preferably 55% or less, particularly preferably 45% or less, even more preferably 35% or less, and most preferably 30% or less. Although the lower limit of the transmittance is not specified, it is more preferably 0.5% or more, still more preferably 1% or more, and particularly preferably 1.5% or more.
次に、図4を参照して、本発明の積層膜付き基材の製造方法の一例について説明する。
なお、ここでは、一例として、図1に示した積層膜付き基材10を例に、その製造方法について説明する。 (Manufacturing method of base material with laminated film)
Next, with reference to FIG. 4, an example of the method for producing the laminated film-attached base material of the present invention will be described.
Here, as an example, the manufacturing method will be described by taking the
図4に示したように、本発明の積層膜付き基材の製造方法は、
(a)主材の第1の面に、熱線吸収層を設置するステップ(ステップS1)と、
(b)熱線吸収層の上に、赤外線反射層を設置するステップ(ステップS2)と、
を有する。 FIG. 4 schematically shows an example of the flow of the method for manufacturing the
As shown in FIG. 4, the method for producing a laminated film-attached base material of the present invention comprises:
(a) placing a heat-absorbing layer on the first surface of the main material (step S1);
(b) placing an infrared reflective layer on the heat absorbing layer (step S2);
have
まず、主材が準備される。前述のように、主材の種類は特に限られない。例えば、主材がガラス板である場合は、ソーダライムシリケート系の高透過ガラスであってもよい。 (Step S1)
First, the main material is prepared. As described above, the type of main material is not particularly limited. For example, when the main material is a glass plate, soda lime silicate-based high-transmittance glass may be used.
水の量が5モル未満であると、形成する膜の抵抗値が増大しやすく、結果として熱線吸収機能が低下しやすくなる。また、核生成の起点が少なくなり、結果として結晶粒が大きく成長しやすく、表面の凹凸が激しくなりやすい。一方、水の量が50モル超であると、水の量の増加にともない、原料ガス容量が増大し、原料ガスの流速が高まることにより、着膜効率が低下するおそれがある。また、核生成の起点が多くなり、結果として結晶粒が小さく成長しやすく、表面がフラットになりやすい。 The amount of water to 1 mol of the tin compound in the source gas is preferably 5 to 50 mol.
If the amount of water is less than 5 mol, the resistance value of the film to be formed tends to increase, resulting in a decrease in the heat ray absorbing function. In addition, the number of starting points for nucleation is reduced, and as a result, crystal grains tend to grow larger, and the surface tends to become rougher. On the other hand, if the amount of water exceeds 50 moles, the volume of the raw material gas increases as the amount of water increases, and the flow rate of the raw material gas increases, which may reduce the film deposition efficiency. In addition, the number of starting points for nucleation increases, and as a result, crystal grains tend to grow smaller and the surface tends to become flat.
ガラスの温度が500℃未満であると、熱線吸収層の形成速度が低下することがある。また、原料ガスの分解により生成した前駆体は、ガラスおよび熱線吸収層の表面で反応する速度よりも、ガラスおよび熱線吸収層の表面を拡散する速度の方が大きくなる。その結果、より多くの前駆体がガラスおよび熱線吸収層の表面の凹凸に流れ込み、表面がフラットになる傾向にある。一方、ガラスの温度が650℃超であると、ガラスの粘性が低い状態で成膜が実施されるため、ガラスが室温まで降温される過程で、反りが生じるおそれがある。また前記前駆体が、ガラスおよび熱線吸収層の表面を拡散する速度よりも、ガラスおよび熱線吸収層の表面で反応する速度の方が大きくなる。その結果、ガラスおよび熱線吸収層表面の凹凸に前駆体があまり流れ込まなくなり、表面の凹凸が大きくなる傾向にある。 When the main material is a glass plate, the temperature of the main material when forming the heat-absorbing layer is preferably 500°C to 650°C.
If the temperature of the glass is less than 500°C, the formation speed of the heat-absorbing layer may decrease. In addition, the precursor generated by the decomposition of the raw material gas diffuses faster on the surface of the glass and the heat-absorbing layer than reacts on the surface of the glass and the heat-absorbing layer. As a result, more of the precursor flows into the irregularities on the surface of the glass and the heat-absorbing layer, which tends to flatten the surface. On the other hand, if the temperature of the glass exceeds 650° C., film formation is performed in a state in which the viscosity of the glass is low. In addition, the reaction rate of the precursor on the surface of the glass and the heat-absorbing layer is higher than the diffusion rate of the precursor on the surface of the glass and the heat-absorbing layer. As a result, the precursor tends to flow less into the irregularities on the surface of the glass and the heat-absorbing layer, and the irregularities on the surface tend to increase.
次に、熱線吸収層の上に、赤外線反射層が形成される。 (Step S2)
Next, an infrared reflective layer is formed on the heat absorbing layer.
赤外線反射層がアルミニウムドープ酸化亜鉛(AZO)で構成される場合は、原料として、トリメチルアルミニウム、ジエチル亜鉛Zn(C2H5)2が使用される。
そして、赤外線反射層がスズドープ酸化インジウム(ITO)で構成される場合は、原料として、インジウムアセチルアセトネート(In(C5H7O2)3)、錫アセチルアセトネート(Sn(C5H7O2)2)が使用される。 Moreover, when the infrared reflective layer is composed of gallium-doped zinc oxide (GZO), trimethylgallium (Ga(CH 3 ) 3 ) and trimethylaluminum (Al(CH 3 ) 3 ) are used as raw materials.
When the infrared reflective layer is composed of aluminum-doped zinc oxide (AZO), trimethylaluminum and diethylzinc Zn( C2H5 ) 2 are used as raw materials.
When the infrared reflective layer is composed of tin-doped indium oxide (ITO), indium acetylacetonate (In(C 5 H 7 O 2 ) 3 ), tin acetylacetonate (Sn(C 5 H 7 O 2 ) 2 ) is used.
水の量が5モル未満であると、形成する膜の抵抗値が増大しやすく、結果として赤外線反射機能が低下しやすくなる。また、核生成の起点が少なくなり、結果として結晶粒が大きく成長しやすく、表面の凹凸が激しくなりやすい。一方、水の量が50モル超であると、水の量の増加にともない、原料ガス容量が増大し、原料ガスの流速が高まることにより、着膜効率が低下するおそれがある。また、核生成の起点が多くなり、結果として結晶粒が小さく成長しやすく、表面がフラットになりやすい。 The amount of water to 1 mol of the tin compound or zinc compound in the source gas is preferably 5 to 50 mol.
If the amount of water is less than 5 mol, the resistance value of the film to be formed tends to increase, resulting in a decrease in the infrared reflecting function. In addition, the number of starting points for nucleation is reduced, and as a result, crystal grains tend to grow larger, and the surface tends to become rougher. On the other hand, if the amount of water exceeds 50 moles, the volume of the raw material gas increases as the amount of water increases, and the flow rate of the raw material gas increases, which may reduce the film deposition efficiency. In addition, the number of starting points for nucleation increases, and as a result, crystal grains tend to grow smaller and the surface tends to become flat.
処理温度が500℃未満であると、赤外線反射層の形成速度が低下することがある。また、原料ガスの分解により生成した前駆体は、ガラスおよび赤外線反射層の表面で反応する速度よりも、ガラスおよび赤外線反射層の表面を拡散する速度の方が大きくなる。その結果、より多くの前駆体がガラスおよび赤外線反射層の表面の凹凸に流れ込み、表面がフラットになる傾向にある。一方、処理温度が650℃超であると、ガラスの粘性が低い状態で成膜が実施されるため、ガラスが室温まで降温される過程で、反りが生じるおそれがある。また前記前駆体が、ガラスおよび赤外線反射層の表面を拡散する速度よりも、ガラスおよび赤外線反射層の表面で反応する速度の方が大きくなる。その結果、ガラスおよび赤外線反射層表面の凹凸に前駆体があまり流れ込まなくなり、表面の凹凸が大きくなる傾向にある。 The temperature for forming the infrared reflective layer is preferably 500° C. to 650° C. when a glass plate is used as the main material.
If the treatment temperature is lower than 500°C, the formation speed of the infrared reflective layer may decrease. In addition, the precursor generated by the decomposition of the raw material gas diffuses faster on the surface of the glass and the infrared reflective layer than it reacts on the surface of the glass and the infrared reflective layer. As a result, more of the precursor flows into the surface irregularities of the glass and the infrared reflective layer, tending to flatten the surface. On the other hand, if the processing temperature is higher than 650° C., film formation is performed while the viscosity of the glass is low, and warping may occur in the process of cooling the glass to room temperature. In addition, the reaction speed of the precursor on the surface of the glass and the infrared reflective layer is higher than the speed of diffusion on the surface of the glass and the infrared reflective layer. As a result, the precursor tends to flow less into the irregularities on the surface of the glass and the infrared reflective layer, and the irregularities on the surface tend to increase.
本発明において、主材と熱線吸収層の間に光学調整層を設ける場合は、ステップS1の前に主材の第1の面に光学調整層を配置する。 (other steps)
In the present invention, when an optical adjustment layer is provided between the main material and the heat absorbing layer, the optical adjustment layer is arranged on the first surface of the main material before step S1.
また、光学調整層は、1層からなるものであってもよいし、2層以上を積層してもよい。 The optical adjustment layer can be configured using various thin film materials such as SiOC, SiO2 , TiO2 , SnO2 , etc., as described above.
Also, the optical adjustment layer may consist of one layer, or may be a laminate of two or more layers.
原料ガスは、予め混合してから主材の第1の面上に搬送してもよい。あるいは、原料ガスは、主材の第1の面上で混合してもよい。 For example, when the optical adjustment layer includes a silicon carbide oxide (SiOC) layer, the optical adjustment layer may be deposited by atmospheric pressure CVD. In this case, for example, a mixed gas containing monosilane (SiH 4 ), ethylene and carbon dioxide can be used as the raw material. When such a carbon-containing gas is used, it becomes easy to form a particulate silicon compound together with a film-like silicon compound, thereby increasing the haze ratio.
The raw material gases may be mixed in advance and then conveyed onto the first surface of the main member. Alternatively, the raw material gases may be mixed on the first surface of the main material.
塗布の方法は、特に限られず、スピンコート法などの一般的な手段が使用されてもよい。 Next, a coating solution is applied onto the infrared reflective layer of the laminated film-coated substrate.
The coating method is not particularly limited, and a common means such as spin coating may be used.
加熱処理の温度は、例えば、80℃~650℃の範囲である。また、加熱時間は、例えば、5分~360分の範囲である。 Next, the laminated film-coated substrate on which the coating solution is applied is heat-treated in the air.
The temperature of the heat treatment is, for example, in the range of 80.degree. C. to 650.degree. Also, the heating time is, for example, in the range of 5 minutes to 360 minutes.
強化工程を実施することにより、主材がガラス板である場合は、ガラス板、さらには得らえる積層膜付き基材の強度を高められる。 The method for producing a base material with a laminated film of the present invention may further include a step (strengthening step) of air-cooling strengthening or chemical strengthening of the main material. This strengthening step may be performed in any order, for example, before step S1 or after manufacturing the base material with the laminated film.
By carrying out the strengthening step, when the main material is a glass plate, the strength of the glass plate and the obtained base material with a laminated film can be increased.
<1>主材と前記主材上に配置される積層膜とを備えた積層膜付き基材であって、前記主材は相互に対向する第1の面及び第2の面を有し、前記主材の前記第1の面に前記積層膜が設置され、前記積層膜は、前記主材に近い側から、熱線吸収層と赤外線反射層を有し、前記熱線吸収層はアンチモンドープ酸化スズ膜より形成され、前記熱線吸収層に含まれるアンチモンの濃度が3~14mol%であり、且つ、前記熱線吸収層の厚さが100~300nmもしくは425~1000nmである積層膜付き基材。
<2>30度の入射角でD65光源を用いて測定した面内の反射色の変動ΔCが2.25以内である、前記<1>に記載の積層膜付き基材。
<3>前記赤外線反射層が、フッ素ドープ酸化スズ、アンチモンドープ酸化スズ、スズドープ酸化インジウム、ガリウムドープ酸化亜鉛及びアルミニウムドープ酸化亜鉛からなる群から選択される少なくとも1つの金属酸化物の膜を含む、前記<1>又は<2>に記載の積層膜付き基材。
<4>前記赤外線反射層の厚さが50~400nmである、前記<1>~<3>のいずれか1つに記載の積層膜付き基材。
<5>前記主材がガラスである、前記<1>~<4>のいずれか1つに記載の積層膜付き基材。
<6>前記積層膜がさらに光学調整層を有し、前記光学調整層は、前記主材と前記熱線吸収層との間に配置される、前記<1>~<5>のいずれか1つに記載の積層膜付き基材。
<7>前記光学調整層が、SiOC膜、SiOC/SiO2積層膜、TiO2/SiO2積層膜及びSnO2/SiO2積層膜からなる群から選択される少なくとも1つの膜を有する、前記<6>に記載の積層膜付き基材。
<8>前記光学調整層がSiOC膜を含む、前記<7>に記載の積層膜付き基材。 As described above, this specification discloses the following configurations.
<1> A base material with a laminated film comprising a main material and a laminated film disposed on the main material, the main material having a first surface and a second surface facing each other, The laminated film is provided on the first surface of the main material, the laminated film has a heat absorption layer and an infrared reflective layer in this order from the side close to the main material, and the heat absorption layer is antimony-doped tin oxide. A base material with a laminated film formed of a film, wherein the concentration of antimony contained in the heat ray absorption layer is 3 to 14 mol %, and the thickness of the heat ray absorption layer is 100 to 300 nm or 425 to 1000 nm.
<2> The laminated film-coated substrate according to <1>, wherein the in-plane reflection color variation ΔC measured using a D65 light source at an incident angle of 30 degrees is within 2.25.
<3> The infrared reflective layer comprises at least one metal oxide film selected from the group consisting of fluorine-doped tin oxide, antimony-doped tin oxide, tin-doped indium oxide, gallium-doped zinc oxide, and aluminum-doped zinc oxide. The substrate with a laminated film according to <1> or <2>.
<4> The substrate with a laminated film according to any one of <1> to <3>, wherein the infrared reflective layer has a thickness of 50 to 400 nm.
<5> The substrate with a laminated film according to any one of <1> to <4>, wherein the main material is glass.
<6> Any one of <1> to <5>, wherein the laminated film further includes an optical adjustment layer, and the optical adjustment layer is disposed between the main material and the heat ray absorbing layer. 3. The base material with a laminated film according to .
<7> The optical adjustment layer has at least one film selected from the group consisting of a SiOC film, a SiOC/SiO 2 laminated film, a TiO 2 /SiO 2 laminated film, and a SnO 2 /SiO 2 laminated film. 6>, the laminated film-attached substrate.
<8> The substrate with a laminated film according to <7>, wherein the optical adjustment layer includes a SiOC film.
ガラス板上にCVD法を用いて薄膜を製膜すると、膜厚に面内ばらつきが生じ、色斑が発生する。
実験例1では、赤外線反射層をフッ素ドープ酸化スズ膜(SnO2:F、FTO)で構成し、熱線吸収層をアンチモンドープ酸化スズ膜(SnO2:Sb、ATO)で構成したときの、異なる膜厚のFTO膜及びATO膜を有する積層膜付き基材の光学特性を、光学シミュレーションを用いて評価した。
光学シミュレーションは、実験的に導出したATO膜とFTO膜の光学定数(屈折率と消衰係数)から、フレネルの公式を用いて反射スペクトルを計算した。得られた反射スペクトルから、JIS(JIS Z 8781-4:2013)の定義に基づいて、a*値を計算した。ATO膜とFTO膜の光学定数は、ATO膜とFTO膜をガラス基板上に成膜し、装置名分光エリプソメーターJ.A.Woollam社製「M-2000 DI」(装置名)を用いて分光エリプソメトリーを測定し、解析ソフトJ.A.Woollam社製WVASE 32を用いて導出した。
色斑の大きさは、FTO膜の膜厚が、5nm変動した時の、Lab座標上での膜面反射色の変化の大きさ(反射色変動ΔC)とした。上記したように、熱線吸収層がアンチモンを有するため、図3で示した、赤外線反射層5を通過し熱線吸収層3との界面で反射する反射光路Bと赤外線反射層5と熱線吸収層3を通過し光学調整層7との界面で反射する反射光路Cとの干渉が弱く、色斑への影響が小さく、積層膜付き基材における色斑は、FTO膜の膜厚分布が主たる原因となる。
光学シミュレーションは、光源はD65光源とし、入射角、反射角ともに30度として行った。 <Experimental example 1>
When a thin film is formed on a glass plate using the CVD method, the film thickness varies within the surface, resulting in color spots.
In Experimental Example 1, the infrared reflective layer is composed of a fluorine-doped tin oxide film (SnO 2 :F, FTO), and the heat ray absorbing layer is composed of an antimony-doped tin oxide film (SnO 2 :Sb, ATO). The optical properties of the laminated film-attached base material having the thick FTO film and the ATO film were evaluated using an optical simulation.
In the optical simulation, the reflection spectrum was calculated using Fresnel's formula from the experimentally derived optical constants (refractive index and extinction coefficient) of the ATO film and the FTO film. The a * value was calculated from the obtained reflectance spectrum based on the definition of JIS (JIS Z 8781-4:2013). The optical constants of the ATO film and the FTO film were measured by forming the ATO film and the FTO film on a glass substrate and measuring them with a spectroscopic ellipsometer J.M. A. Spectroscopic ellipsometry was measured using Woollam's "M-2000 DI" (apparatus name), and analysis software J.M. A. Derived using WVASE 32 manufactured by Woollam.
The size of color mottling was defined as the size of change in film surface reflection color (reflection color change ΔC) on Lab coordinates when the film thickness of the FTO film fluctuated by 5 nm. As described above, since the heat ray absorbing layer contains antimony, the reflected light path B passing through the infrared reflecting
The optical simulation was performed using a D65 light source as the light source, with both the incident angle and the reflection angle of 30 degrees.
表1に示す構成の例1~18の積層膜付き基材の作製方法は以下のとおりである。
まず、厚さ2.1mm、面積1m2のガラス基板(ソーダライムシリケートガラス:AGC株式会社製)を準備し、このガラス基板の上に、光学調整層として、厚み70nmのSiOC層をCVD法により成膜する。原料ガスとして、モノシラン、エチレン、二酸化炭素を使用し、キャリアガスとして窒素を使用する。
次に、SiOC層の上に熱線吸収層としてアンチモンドープ酸化スズ膜(SnO2:Sb、ATO)をCVD法により成膜する。原料ガスとして、モノブチルティントリクロライド(C4H9SnCl3、MBTC)、三塩化アンチモン(SbCl3)、水、空気、塩化水素を使用し、キャリアガスとして窒素を使用する。熱線吸収層の厚さ(最大厚さ)は、200~700nmの所定厚みとする。
次に、熱線吸収層の上に、赤外線反射層としてフッ素ドープ酸化スズ膜(SnO2:F、FTO)をCVD法により成膜する。原料ガスとして、モノブチルティントリクロライド(C4H9SnCl3、MBTC)、水、空気、トリフルオロ酢酸(FTO)、硝酸を使用し、キャリアガスとして窒素を使用する。赤外線反射層の厚さ(最大厚さ)は、120~300nmの所定厚みとする。
これにより、積層膜付き基材を得る。 (Examples 1-18)
The method for producing the laminated film-attached substrates of Examples 1 to 18 having the configurations shown in Table 1 is as follows.
First, a glass substrate (soda lime silicate glass: manufactured by AGC Co., Ltd.) having a thickness of 2.1 mm and an area of 1 m 2 was prepared. form a film. Monosilane, ethylene, and carbon dioxide are used as raw material gases, and nitrogen is used as a carrier gas.
Next, an antimony-doped tin oxide film (SnO 2 :Sb, ATO) is formed as a heat absorption layer on the SiOC layer by CVD. Monobutyltin trichloride (C 4 H 9 SnCl 3 , MBTC), antimony trichloride (SbCl 3 ), water, air, and hydrogen chloride are used as source gases, and nitrogen is used as carrier gas. The thickness (maximum thickness) of the heat ray absorbing layer is a predetermined thickness of 200 to 700 nm.
Next, a fluorine-doped tin oxide film (SnO 2 :F, FTO) is formed as an infrared reflective layer on the heat absorbing layer by CVD. Monobutyltin trichloride (C 4 H 9 SnCl 3 , MBTC), water, air, trifluoroacetic acid (FTO), and nitric acid are used as source gases, and nitrogen is used as carrier gas. The thickness (maximum thickness) of the infrared reflective layer is a predetermined thickness of 120 to 300 nm.
Thereby, a base material with a laminated film is obtained.
膜付き基材を厚み方向に切断し、断面を走査型電子顕微鏡(SEM、株式会社日立製作所製「SU 70」)により観察する。
熱線吸収層や赤外線反射層の界面がSEM観察により確認できる場合は、SEM画像から直接各層の膜厚を調べる。界面に凹凸を有する場合は、最も低い谷と最も高い山の各水平ラインの中間ラインを目安としながら各層の膜厚を導出する。観察倍率は、低すぎると膜厚計測の精度が不十分になってしまう一方、高すぎると局所的な凹凸を見てしまい、各層の膜厚を正しく導出出来ない恐れがある為、適した範囲が存在する。よって、観察条件の目安として、電子銃1.5kV、ワーキングディスタンス2.4mm、倍率5万倍を採用する。
熱線吸収層と赤外線反射層の界面がSEM観察により確認できない場合は、SEM画像から熱線吸収層及び赤外線反射層の膜厚の和を調べた後、X線光電子分光法(XPS)による深さ方向の分析を用い、熱線吸収層及び赤外線反射層の膜厚の比を調べた。深さ方向分析は、真空度10-6PaのXPSチャンバー内でArスパッタを用いて膜をエッチングしながらXPS測定を行う。X線の照射面積は100μmφ、X線の照射角度は45deg.に固定する。本例における熱線吸収層は、ATO(アンチモンドープ酸化スズ)膜であるので、XPSによる深さ方向分析により得られるSbのモル比がエッチング時間に対して増加し始める点(時間)と増加し終わり傾きがおおよそゼロになる点(時間)の中間点を熱線吸収層と赤外線反射層の界面と据える。また、本例における光学調整層は、SiOC膜であるので、SnとSiのモル比が同じ値を示すクロスポイントを熱線吸収層と光学調整層の界面と据える。この方法によれば、予め単層膜品で測定しておいた熱線吸収層と赤外線反射層のエッチングレートを参考にしながら、各層の膜厚を再現性高く導出可能である。各原子のモル比導出においては、ULVAC社製ソフトウェア PHI MULTIPACを用いて、X線ピーク強度から組成を計算する。XPS分析条件として、O1s、Si2p、Sn3d5、Sb3d3軌道の電子情報を参照したが、O1sはSb3d5のピーク出現位置と重なっている為、各原子のモル比の導出においては、原理に則りSb3d3ピーク強度の1.5倍をO1sのピーク強度より差し引くことで校正を行う。
XPSは、ULVAC-PHI社製「PHI 5000 Versa Probe」を用いた。 <Measurement of thickness of each layer>
The film-coated substrate is cut in the thickness direction, and the cross section is observed with a scanning electron microscope (SEM, "SU 70" manufactured by Hitachi, Ltd.).
When the interface between the heat-absorbing layer and the infrared-reflecting layer can be confirmed by SEM observation, the film thickness of each layer is checked directly from the SEM image. When the interface has unevenness, the film thickness of each layer is derived using the middle line between the horizontal lines of the lowest valley and the highest peak as a guideline. If the observation magnification is too low, the accuracy of film thickness measurement will be insufficient. exists. Therefore, as a guide for observation conditions, an electron gun of 1.5 kV, a working distance of 2.4 mm, and a magnification of 50,000 are adopted.
If the interface between the heat absorption layer and the infrared reflection layer cannot be confirmed by SEM observation, after examining the sum of the thickness of the heat absorption layer and the infrared reflection layer from the SEM image, the depth direction by X-ray photoelectron spectroscopy (XPS) was used to examine the thickness ratio of the heat-absorbing layer and the infrared-reflecting layer. The depth direction analysis is performed by XPS measurement while etching the film using Ar sputtering in an XPS chamber with a degree of vacuum of 10 −6 Pa. The X-ray irradiation area was 100 μmφ, and the X-ray irradiation angle was 45 deg. fixed to Since the heat-absorbing layer in this example is an ATO (antimony-doped tin oxide) film, the point (time) at which the Sb molar ratio obtained by XPS depth profile analysis begins to increase with respect to the etching time and the point at which the increase ends The middle point (time) at which the slope becomes approximately zero is set as the interface between the heat ray absorbing layer and the infrared reflective layer. Further, since the optical adjustment layer in this example is a SiOC film, the cross point at which the molar ratio of Sn and Si exhibits the same value is set as the interface between the heat ray absorption layer and the optical adjustment layer. According to this method, it is possible to derive the film thickness of each layer with high reproducibility while referring to the etching rates of the heat ray absorbing layer and the infrared reflecting layer, which have been measured in advance for single-layer film products. In deriving the molar ratio of each atom, the composition is calculated from the X-ray peak intensity using software PHI MULTIPAC manufactured by ULVAC. As the XPS analysis conditions, the electronic information of the O1s, Si2p, Sn3d5, and Sb3d3 orbitals was referred to. is calibrated by subtracting 1.5 times from the peak intensity of O1s.
For XPS, "PHI 5000 Versa Probe" manufactured by ULVAC-PHI was used.
アンチモン濃度は、X線光電子分光測定(XPS)による深さ方向の分析を行い、SbとSnの強度比から調べる。XPSは、ULVAC-PHI社製「PHI 5000 Versa Probe」を用いる。
なお、アンチモン濃度は熱線吸収層の膜厚方向に分布がある場合がある。その場合は、深さ方向の平均値を、アンチモン濃度とする。 <Measurement of concentration of antimony>
The antimony concentration is analyzed in the depth direction by X-ray photoelectron spectrometry (XPS) and examined from the intensity ratio of Sb and Sn. For XPS, "PHI 5000 Versa Probe" manufactured by ULVAC-PHI is used.
The antimony concentration may be distributed in the film thickness direction of the heat ray absorbing layer. In that case, the average value in the depth direction is used as the antimony concentration.
色斑の大きさを計算するために、積層膜付き基材のガラス基板側から見た反射色(a*,b*)の分布を測定する。光源はD65光源とし、入射角、反射角ともに積層膜付き基材に対して30度とし、光は積層膜付き基材のガラス面側から照射する。光源のスポットサイズは、ガラス表面で約1cm2になるように調整し、ガラス基板の面内を3cm間隔で反射スペクトルを測定した。得られたスペクトルから各測定点の反射色(a*,b*)を計算する。
得られた反射色のデータから、色座標上でのユークリッド距離ΔC12=((a1 *-a2 *)2+(b1 *-b2 *)2)0.5が最大になる(a1 *,b1 *),(a2 *,b2 *)の組み合わせを選び、そのΔC12を積層膜付き基材の反射色の変動ΔCとする。
膜付き基材の色度測定は、分光測色計(コニカミノルタ株式会社製「CM-2500d」)を用いて行う。 <Measurement of reflected color variation (ΔC)>
In order to calculate the size of color spots, the distribution of reflected colors (a * , b * ) viewed from the glass substrate side of the laminated film-coated substrate is measured. A D65 light source was used as the light source, and both the incident angle and the reflection angle were set at 30 degrees with respect to the laminated film-coated substrate, and the light was irradiated from the glass surface side of the laminated film-coated substrate. The spot size of the light source was adjusted to about 1 cm 2 on the glass surface, and the reflection spectrum was measured at intervals of 3 cm in the plane of the glass substrate. The reflected color (a * , b * ) at each measurement point is calculated from the obtained spectrum.
From the obtained reflected color data, the Euclidean distance ΔC 12 =((a 1 * -a 2 * ) 2 +(b 1 * -b 2 * ) 2 ) 0.5 on the color coordinates is the maximum ( A combination of a 1 * , b 1 * ) and (a 2 * , b 2 * ) is selected, and its ΔC 12 is defined as the reflection color variation ΔC of the base material with the laminated film.
The chromaticity of the film-coated substrate is measured using a spectrophotometer (“CM-2500d” manufactured by Konica Minolta, Inc.).
積層膜付き基材の赤外線反射層側の反射率は、ISO9050:2003に記載の方法により測定する。 <Measurement of reflectance>
The reflectance of the substrate with the laminated film on the side of the infrared reflective layer is measured by the method described in ISO9050:2003.
積層膜付き基材の透過率は、ISO9050:2003に記載の方法により測定する。 <Measurement of transmittance>
The transmittance of the laminated film-attached substrate is measured by the method described in ISO9050:2003.
例2と例3、例4と例5、例6、8及び9と例7、例10と例11、並びに、例12と例13の各対比により、また例14と例15の結果より、熱線吸収層にアンチモンを3~14mol%の範囲で含み、且つ熱線吸収層の厚みが100~300nmあるいは425~1000nmとすることで、優れた色斑抑制の効果が得られることがわかった。 From Table 1, in Examples 1, 2, 4, 6, 8 to 10, 12, 16 to 18, the color difference ΔC of the reflected color is 2.25 or less, and color spots are suppressed even when the area is increased. all right.
By comparing Examples 2 and 3, Examples 4 and 5, Examples 6, 8 and 9 and 7, Examples 10 and 11, and Examples 12 and 13, and from the results of Examples 14 and 15, It was found that when the heat ray absorbing layer contains antimony in the range of 3 to 14 mol % and the thickness of the heat ray absorbing layer is 100 to 300 nm or 425 to 1000 nm, an excellent effect of suppressing color spots can be obtained.
実験例1のシミュレーションの妥当性を検証するために、実験例2では、表2に示す構成の例19~23の積層膜付き基材を作製し、光学特性を評価した。各基材に対しそれぞれ光学シミュレーションを実施し、実験データと比較した。 <Experimental example 2>
In order to verify the validity of the simulation of Experimental Example 1, in Experimental Example 2, substrates with laminated films of Examples 19 to 23 having the configurations shown in Table 2 were produced and their optical characteristics were evaluated. Optical simulations were performed for each substrate and compared with experimental data.
表2に示す構成の例19~23の積層膜付き基材を作製した。
まず、厚さ2.04mm、面積1m2のガラス基板(ソーダライムシリケートガラス:AGC株式会社製)を準備した。
このガラス基板の上に、光学調整層として、SiOC層をCVD法により成膜した。原料ガスとして、モノシラン、エチレン、二酸化炭素を使用し、キャリアガスとして窒素を使用した。SiOC層の目標厚さは、70nmとした。
次に、SiOC層の上に熱線吸収層としてアンチモンドープ酸化スズ膜(SnO2:Sb、ATO)をCVD法により成膜した。原料ガスとして、モノブチルティントリクロライド(C4H9SnCl3、MBTC)、三塩化アンチモン(SbCl3)、水、空気、塩化水素を使用し、キャリアガスとして窒素を使用した。熱線吸収層の目標厚さ(最大厚さ)は、350~630nmとした。
次に、熱線吸収層の上に、赤外線反射層としてフッ素ドープ酸化スズ膜(SnO2:F、FTO)をCVD法により成膜した。原料ガスとして、モノブチルティントリクロライド(C4H9SnCl3、MBTC)、水、空気、トリフルオロ酢酸(FTO)、硝酸を使用し、キャリアガスとして窒素を使用した。赤外線反射層の目標厚さ(最大厚さ)は、175~300nmとした。
これにより、積層膜付き基材を得た。 (Examples 19-23)
Base materials with laminated films of Examples 19 to 23 having the configurations shown in Table 2 were produced.
First, a glass substrate (soda lime silicate glass: manufactured by AGC Co., Ltd.) having a thickness of 2.04 mm and an area of 1 m 2 was prepared.
A SiOC layer was formed as an optical adjustment layer on the glass substrate by a CVD method. Monosilane, ethylene, and carbon dioxide were used as raw material gases, and nitrogen was used as a carrier gas. The target thickness of the SiOC layer was set to 70 nm.
Next, an antimony-doped tin oxide film (SnO 2 :Sb, ATO) was formed as a heat absorption layer on the SiOC layer by CVD. Monobutyltin trichloride (C 4 H 9 SnCl 3 , MBTC), antimony trichloride (SbCl 3 ), water, air, and hydrogen chloride were used as source gases, and nitrogen was used as carrier gas. The target thickness (maximum thickness) of the heat ray absorbing layer was 350 to 630 nm.
Next, a fluorine-doped tin oxide film (SnO 2 :F, FTO) was formed as an infrared reflective layer on the heat ray absorbing layer by the CVD method. Monobutyltin trichloride (C 4 H 9 SnCl 3 , MBTC), water, air, trifluoroacetic acid (FTO), and nitric acid were used as source gases, and nitrogen was used as carrier gas. The target thickness (maximum thickness) of the infrared reflective layer was 175 to 300 nm.
Thus, a laminated film-attached base material was obtained.
光学シミュレーションの反射スペクトルは、実験例1に記載の方法により得た。
また、実測の反射スペクトルは、パーキンエルマー社製 Lambda950を用いて測定した。 For the laminated film-attached substrates of Examples 19 to 23, the concentration of antimony and the film thickness were measured by the measurement method described in Experimental Example 1, and the reflection spectra of the optical simulation and the actually measured reflection spectra were compared.
Reflectance spectra for optical simulation were obtained by the method described in Experimental Example 1.
Moreover, the actually measured reflection spectrum was measured using Lambda950 manufactured by PerkinElmer.
1a 第1の面
1b 第2の面
2 積層膜
3 熱線吸収層
5 赤外線反射層
7 光学調整層
10、20 積層膜付き基材
A~C 反射光路 1
Claims (8)
- 主材と前記主材上に配置される積層膜とを備えた積層膜付き基材であって、
前記主材は相互に対向する第1の面及び第2の面を有し、前記主材の前記第1の面に前記積層膜が設置され、
前記積層膜は、前記主材に近い側から、熱線吸収層と赤外線反射層を有し、
前記熱線吸収層はアンチモンドープ酸化スズ膜より形成され、前記熱線吸収層に含まれるアンチモンの濃度が3~14mol%であり、且つ、前記熱線吸収層の厚さが100~300nmもしくは425~1000nmである積層膜付き基材。 A laminated film-attached base material comprising a main material and a laminated film disposed on the main material,
The main member has a first surface and a second surface facing each other, and the laminated film is provided on the first surface of the main member,
The laminated film has a heat ray absorbing layer and an infrared reflective layer from the side closer to the main material,
The heat ray absorbing layer is formed of an antimony-doped tin oxide film, the concentration of antimony contained in the heat ray absorbing layer is 3 to 14 mol%, and the thickness of the heat ray absorbing layer is 100 to 300 nm or 425 to 1000 nm. A substrate with a laminated film. - 30度の入射角でD65光源を用いて測定した面内の反射色の変動ΔCが2.25以内である、請求項1に記載の積層膜付き基材。 The laminated film-coated substrate according to claim 1, wherein the in-plane reflection color variation ΔC measured using a D65 light source at an incident angle of 30 degrees is within 2.25.
- 前記赤外線反射層が、フッ素ドープ酸化スズ、アンチモンドープ酸化スズ、スズドープ酸化インジウム、ガリウムドープ酸化亜鉛及びアルミニウムドープ酸化亜鉛からなる群から選択される少なくとも1つの金属酸化物の膜を含む、請求項1又は2に記載の積層膜付き基材。 2. The infrared reflective layer comprises a film of at least one metal oxide selected from the group consisting of fluorine-doped tin oxide, antimony-doped tin oxide, tin-doped indium oxide, gallium-doped zinc oxide, and aluminum-doped zinc oxide. 3. The substrate with a laminated film according to 2.
- 前記赤外線反射層の厚さが50~400nmである、請求項1~3のいずれか1項に記載の積層膜付き基材。 The substrate with a laminated film according to any one of claims 1 to 3, wherein the thickness of the infrared reflective layer is 50 to 400 nm.
- 前記主材がガラスである、請求項1~4のいずれか1項に記載の積層膜付き基材。 The substrate with a laminated film according to any one of claims 1 to 4, wherein the main material is glass.
- 前記積層膜がさらに光学調整層を有し、前記光学調整層は、前記主材と前記熱線吸収層との間に配置される、請求項1~5のいずれか1項に記載の積層膜付き基材。 With the laminated film according to any one of claims 1 to 5, wherein the laminated film further has an optical adjustment layer, and the optical adjustment layer is disposed between the main material and the heat absorption layer. Base material.
- 前記光学調整層が、SiOC膜、SiOC/SiO2積層膜、TiO2/SiO2積層膜及びSnO2/SiO2積層膜からなる群から選択される少なくとも1つの膜を有する、請求項6に記載の積層膜付き基材。 7. The optical adjustment layer according to claim 6, wherein the optical adjustment layer has at least one film selected from the group consisting of a SiOC film, a SiOC/ SiO2 laminated film, a TiO2/ SiO2 laminated film and a SnO2 / SiO2 laminated film. A substrate with a laminated film.
- 前記光学調整層がSiOC膜を含む、請求項7に記載の積層膜付き基材。 The substrate with a laminated film according to claim 7, wherein the optical adjustment layer includes a SiOC film.
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- 2022-05-25 WO PCT/JP2022/021449 patent/WO2022255200A1/en active Application Filing
- 2022-05-25 CN CN202280038933.2A patent/CN117396446A/en active Pending
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JPH04154647A (en) * | 1990-10-16 | 1992-05-27 | Asahi Glass Co Ltd | Transparent electrically conductive laminate |
JP2000103648A (en) * | 1998-08-21 | 2000-04-11 | Elf Atochem North America Inc | Solar control coated glass |
JP2001199744A (en) * | 1999-03-19 | 2001-07-24 | Nippon Sheet Glass Co Ltd | Low radiation glass and glass article using the low radiation glass |
JP2001007363A (en) * | 1999-06-18 | 2001-01-12 | Nippon Sheet Glass Co Ltd | Glass fitted with transparent electrode for solar cell |
JP2003535004A (en) * | 1999-08-10 | 2003-11-25 | リビー−オーウェンズ−フォード・カンパニー | Glassware with solar control coating |
US20060141265A1 (en) * | 2004-12-28 | 2006-06-29 | Russo David A | Solar control coated glass composition with reduced haze |
CN103539365A (en) * | 2013-10-09 | 2014-01-29 | 河源旗滨硅业有限公司 | Reflective solar-control low-emissivity coated glass and preparation method thereof |
WO2017212214A1 (en) * | 2016-06-09 | 2017-12-14 | Pilkington Group Limited | Coated glass article and window for a vehicle including the same |
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JPWO2022255200A1 (en) | 2022-12-08 |
CN117396446A (en) | 2024-01-12 |
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