WO2022254126A1 - Organe de manipulation de dispositifs optoélectroniques et procédé de manipulation de tels dispositifs - Google Patents
Organe de manipulation de dispositifs optoélectroniques et procédé de manipulation de tels dispositifs Download PDFInfo
- Publication number
- WO2022254126A1 WO2022254126A1 PCT/FR2022/050988 FR2022050988W WO2022254126A1 WO 2022254126 A1 WO2022254126 A1 WO 2022254126A1 FR 2022050988 W FR2022050988 W FR 2022050988W WO 2022254126 A1 WO2022254126 A1 WO 2022254126A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- optoelectronic device
- substrate
- optoelectronic
- manipulation member
- selection layer
- Prior art date
Links
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- VQGHOUODWALEFC-UHFFFAOYSA-N 2-phenylpyridine Chemical compound C1=CC=CC=C1C1=CC=CC=N1 VQGHOUODWALEFC-UHFFFAOYSA-N 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
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- URQUNWYOBNUYJQ-UHFFFAOYSA-N diazonaphthoquinone Chemical compound C1=CC=C2C(=O)C(=[N]=[N])C=CC2=C1 URQUNWYOBNUYJQ-UHFFFAOYSA-N 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- YQGOJNYOYNNSMM-UHFFFAOYSA-N eosin Chemical compound [Na+].OC(=O)C1=CC=CC=C1C1=C2C=C(Br)C(=O)C(Br)=C2OC2=C(Br)C(O)=C(Br)C=C21 YQGOJNYOYNNSMM-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67144—Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68318—Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
- H01L2221/68322—Auxiliary support including means facilitating the selective separation of some of a plurality of devices from the auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
Definitions
- TITLE Body for manipulating optoelectronic devices and method for manipulating such devices.
- the present invention relates to a manipulation member of at least one optoelectronic device.
- the invention also relates to a method for handling such an optoelectronic device.
- the luminous elements constituting the screen must be arranged in a matrix fashion in an increasingly precise manner as the resolution of the screens increases.
- These luminous elements each comprise at least one light-emitting diode and are organized in the form of a multicolor pixel or in the form of a monochrome sub-pixel.
- the object of the present invention is to propose a solution which responds to all or part of the aforementioned problems.
- This object can be achieved through the implementation of a manipulation member capable of manipulating at least one optoelectronic device capable of emitting light in a first wavelength range, said manipulation member comprising a body having a contact surface, and a selection layer deposited on said contact surface, the selection layer consisting of a photosensitive element, said photosensitive element being configured to change state locally when it is subjected to light radiation included in the first wavelength range, so as to vary between a first state in which the selection layer of the manipulation member adheres with the optoelectronic device, and a second state in which the selection layer of the manipulation member manipulation does not adhere with the optoelectronic device.
- the arrangements previously described make it possible to propose a manipulation member configured to move optoelectronic devices via the selection layer.
- the selection layer can also be removed when it is illuminated by the optoelectronic device.
- changing state is meant a physical or chemical phenomenon which induces a structural or conformational change in the photosensitive element.
- the change of state may correspond to a softening or a hardening of the photosensitive element, or a change in solubility.
- the change of state can also correspond to a phase change of the photosensitive element.
- the photosensitive element can be configured to become liquid, or alternatively solid, or alternatively gaseous when it is subjected to light radiation comprised in the first wavelength range, that is to say in particular when the optoelectronic device emits light.
- the photosensitive element can be configured to become labile when it is subjected to light radiation comprised in the first wavelength range, that is to say in particular when the optoelectronic device emits light. Synergistically, if an optoelectronic device does not emit light, for example if it is damaged, it will not be able to emit light radiation in the first wavelength range, and therefore will not be able to change state the selection layer.
- the manipulation member may also have one or more of the following characteristics, taken alone or in combination.
- the photosensitive element is a molecular glue.
- the photosensitive element is a photosensitive polymer.
- the change of state can comprise a change in solubility, either by partial or total polymerization, or by partial or total depolymerization, or by other mechanisms such as photocleavage, photoaddition, fragmentation, or other.
- the photosensitive element is configured to change state locally when it is subjected to light radiation comprised in the first wavelength range, so as to vary from the first state to the second state .
- the photosensitive element is configured to allow the separation of the manipulation member and of the optoelectronic device when it is subjected to light radiation comprised in the first wavelength range.
- the photosensitive element is configured to change state locally when it is subjected to light radiation emitted by the optoelectronic device, so as to vary between the first state and the second state.
- This light radiation emitted by the optoelectronic device having a wavelength comprised in the first wavelength range.
- the change of local state of the photosensitive element when it is subjected to light radiation makes it possible both to carry out an operating test of the optoelectronic device while allowing its detachment from the manipulation member, by one step. It is therefore not necessary to carry out a test step to determine whether an optoelectronic device is defective before it is transferred.
- the second state is a liquid or labile state.
- the contact surface of the body has contact pads intended to be brought into contact with said at least one optoelectronic device via the selection layer.
- the contact pads are distributed over the contact surface according to a predetermined spacing corresponding to a spacing between two optoelectronic devices arranged on a sampling substrate.
- the manipulation member comprises at least one cooperation notch having a shape allowing interlocking of the optoelectronic device, or having a shape complementary to the device optoelectronics.
- the manipulation member is configured to be able to fit together with the optoelectronic device.
- the manipulation member comprises a plurality of cooperation notches separated from each other by the predetermined spacing.
- the predetermined spacing is defined as the spacing separating two optoelectronic devices on a receiving substrate receiving the optoelectronic devices after manipulation from the sampling substrate by means of the manipulation member, in particular a substrate for a bright display screen.
- the predetermined spacing can be between 50 ⁇ m and 2 mm, and more particularly substantially equal to 100 ⁇ m.
- the manipulation member may comprise electronic tracks intended to be electrically connected with at least one electrode included in the optoelectronic device.
- said at least one electrode may be a transparent conductive electrode (TCO) arranged on a functional surface of the optoelectronic device, or an interconnection pad provided to be brought into contact with electronic connections arranged on the sampling substrate or the receiving substrate.
- TCO transparent conductive electrode
- the manipulation member can supply electrical energy to each optoelectronic device with which it is connected via the electronic tracks.
- the photosensitive element is a molecular glue
- said supply of the optoelectronic device by the manipulation member can advantageously be carried out through the photosensitive element.
- the first wavelength range is between 190 nm and 2000 nm, more particularly between 365 nm and 800 nm, and is notably substantially equal to 420 nm or substantially equal to 450 nm.
- the optoelectronic device may comprise a light-emitting element comprising at least one light-emitting diode (LED) able to emit and/or pick up light, and optionally an electronic control component associated with said at least one light-emitting diode, such as a transistor.
- each diode can comprise a first doped part intended to be brought into contact with a first electrode, a second doped part intended to be brought into contact with a second electrode, and an active part capable of changing state when a external parameter external to the active part is applied to the active part, the external parameter being able for example to consist of the application of a current.
- the electronic control component is in particular capable of influencing at least one external parameter associated with the active part.
- the electronic control component may for example be capable of modulating at least one emission parameter relating to the light radiation likely to be emitted by the active part.
- the photosensitive element may comprise an organic polymer belonging to the family of polythiophenes, or certain derivatives of methacrylates, or belonging to the family of acrylamides, siloxanes, polyphenylenes, polystyrenes, polyvinyls, polymers coordination, or equivalent.
- the photosensitive polymer can be combined with a suitable photoinitiator such as DNQ.
- the photosensitive element can be a positive resin such as siloxane resins, or polymethacrylates.
- the photosensitive element can comprise a photoinitiator configured to harden the photosensitive element or to depolymerize it when it is subjected to light radiation included in the first wavelength range
- the object of the invention can also be achieved thanks to the implementation of a method for manipulating at least one optoelectronic device from a sampling substrate, said at least one optoelectronic device being capable of emitting radiation light comprised in a first wavelength range when it is supplied with electrical energy, the manipulation method comprising: a step of supplying the sampling substrate on which the at least one optoelectronic device is placed; a step of providing a manipulation member comprising a body having a contact surface; a step of applying a selection layer to at least one element chosen from the group comprising said contact surface of the manipulation member and the at least one optoelectronic device, the selection layer consisting of a photosensitive element, said photosensitive element being configured to change state locally when it is subjected to light radiation comprised in the first wavelength range; a step of bringing the manipulation member into contact with said at least one optoelectronic device at the level of the selection layer, so as to cause the manipulation member to adhere to the optoelectronic device; a step of
- the arrangements previously described make it possible to propose a method for manipulating optoelectronic devices.
- the presence of the selection layer makes it possible in a first case to cause the manipulation member to adhere to the optoelectronic device, and in a second case to allow the separation of the optoelectronic device and the manipulation member.
- changing state is meant a physical or chemical phenomenon which induces a structural or conformational change in the photosensitive element.
- the change of state may correspond to a softening or a hardening of the photosensitive element, or a change in solubility.
- the change of state can also correspond to a phase change of the photosensitive element.
- the photosensitive element can be configured to become liquid, or alternatively solid, or alternatively gaseous when it is subjected to light radiation comprised in the first wavelength range, that is to say in particular when the optoelectronic device emits light.
- the photosensitive element can be configured to become labile when it is subjected to light radiation comprised in the first wavelength range, that is to say in particular when the optoelectronic device emits light. Synergistically, if an optoelectronic device does not emit light, for example if it is damaged, it will not be able to emit light radiation in the first wavelength range, and therefore will not be able to change state the selection layer.
- the photosensitive element can further be configured to become liquid, or alternatively solid, or alternatively gaseous when it is subjected to light radiation in the first wavelength range, that is to say in particular when the optoelectronic device emits light.
- the photosensitive element can be configured to become labile when it is subjected to light radiation in the first wavelength range, that is to say in particular when the optoelectronic device emits light. Synergistically, if an optoelectronic device does not emit light, for example if it is damaged, it will not be able to emit light radiation in the first wavelength range, and therefore will not be able to change state the selection layer. In this way, the manipulation method makes it possible to select the defective optoelectronic devices on the surface of a screen substrate or those intended to emit light characterized by a wavelength which is not included in the first range of wavelength.
- the manipulation method may additionally have one or more of the following characteristics, taken alone or in combination.
- the manipulation method comprises a step of removing the manipulation member, in which the manipulation member is separated from the sampling substrate.
- the contacting step may comprise the application of a chemical or optical activation so as to increase the adhesion of the selection layer with the manipulation member and/or with the optoelectronic device .
- a chemical or optical activation so as to increase the adhesion of the selection layer with the manipulation member and/or with the optoelectronic device .
- the manipulation method comprises a transfer phase from the sampling substrate to a receiving substrate, in particular a substrate for a display screen, implemented after the step of bringing the organ into contact manipulation, said transfer phase comprising: a step of detaching said at least one optoelectronic device from the sampling substrate, in particular by mechanical traction applied to the body of the manipulation member; and a positioning step in which the contact surface of the manipulation member is positioned opposite a receiving surface of the receiving substrate.
- the positioning step is implemented so that the contact surface of the manipulation member is positioned opposite a receiving surface of the receiving substrate, in a relative position such that the optoelectronic devices are in contact with the receiving surface of the receiving substrate.
- the transfer phase is implemented before the step of supplying the electronic device.
- the transfer phase is implemented after the step of supplying the electronic device.
- the step of supplying electrical energy to the optoelectronic device is carried out before the step of detaching said at least one optoelectronic device from the sampling substrate.
- the step of supplying electrical energy to the optoelectronic device makes it possible to place the optoelectronic device selectively in an emission mode in which it emits light radiation in the first wavelength range and in a extinction mode in which it does not emit light radiation.
- the sampling substrate comprises a plurality of optoelectronic devices, each optoelectronic device of the plurality of optoelectronic devices being able to be supplied individually with electrical energy.
- the step of supplying the sampling substrate comprises supplying a light-emitting screen substrate comprising a plurality of optoelectronic devices distributed over an emission surface of the screen substrate, the surface of emission of the screen substrate comprising electronic connections configured to make it possible to individually supply each optoelectronic device of the plurality of optoelectronic devices, in particular during the step of supplying electrical energy.
- the manipulation member comprises electronic tracks configured to make it possible to individually supply each optoelectronic device of the plurality of optoelectronic devices, in particular during the step of supplying electrical energy.
- the optoelectronic devices In this way, it is possible to power the optoelectronic devices unitarily so as to cause the selection layer to change state. In other words, it is possible to selectively release each optoelectronic device from contact with the manipulation member.
- the provisions previously described make it possible to individually select the optoelectronic devices to be manipulated with the manipulation member. For example, this may make it possible to remove only certain predetermined optoelectronic devices from the surface of the screen substrate.
- the step of supplying electrical energy is implemented selectively on one or more of the optoelectronic devices of the plurality of optoelectronic devices.
- the electrical power supply step can be applied selectively to a set of optoelectronic devices selected from among the plurality of optoelectronic devices, the number of optoelectronic devices of this set being greater than or equal to 1.
- the electrical power supply step is implemented on optoelectronic devices arranged relative to each other at a predetermined distance, in particular between 50 ⁇ m and 2 mm.
- the manipulation method comprises a step of chemical treatment of the contact surface of the manipulation member to increase the chemical affinity of the manipulation member with the photosensitive element constituting the selection layer.
- the chemical treatment step comprises exposing the contact surface to a plasma comprising dioxygen to generate hydroxyl bonds.
- the chemical affinity can come from electrostatic interactions, or from hydrophilic/hydrophobic interactions.
- the chemical treatment step can include starting a polymerization reaction.
- the step of removing the manipulation member can comprise a step in which the manipulation member is separated from the receiving substrate.
- the step of removing the manipulation member can be implemented in a configuration where the manipulation member is arranged below the optoelectronic device in the direction of gravity.
- the photosensitive element is in the second state, and in particular if it is in a liquid, gaseous or labile state, it is detached from the optoelectronic device by simple gravity.
- the photosensitive element is detached from the optoelectronic device by gravity, making it possible not to leave any residual material on the optoelectronic device during the step of removing the manipulation member.
- Figure 1 is a schematic view of certain steps of the manipulation method according to a particular embodiment of the invention.
- Figure 2 is a schematic view of certain steps of the manipulation method according to a particular embodiment of the invention.
- FIG. 3 Figure 3 is a schematic view of certain steps of the manipulation method according to a particular embodiment of the invention.
- Figure 4 is a schematic view of certain steps of the manipulation method according to a particular embodiment of the invention.
- Figure 5 is a schematic view of certain steps of the manipulation method according to a particular embodiment of the invention.
- Figure 6 is a schematic view of certain steps of the manipulation method according to a particular embodiment of the invention.
- the invention firstly relates to a manipulation member 3 capable of manipulating at least one optoelectronic device 1 capable of emitting light in a first wavelength range, and also a method manipulation of such an optoelectronic device 1 from a sampling substrate 9.
- the optoelectronic device 1 is intended to be fixed on a receiving face of a receiving substrate 19, such as for example a substrate for a luminous display screen, in particular by means of a surface distribution of a plurality of such optoelectronic devices 1 on all or part of the free surface of the receiving face.
- each optoelectronic device 1 can be attached to the sampling substrate 9 via an adhesion layer 2.
- the optoelectronic devices can be attached to the sampling substrate 9 via an adhesion layer 2.
- the optoelectronic devices 1 may have at least one interconnection pad 4 intended to cooperate with electronic connections 20 arranged on the surface of the receiving substrate 19.
- each interconnection pad 4 may be intended to be soldered to an electronic connection 20.
- the interconnection pads 4 may be intended to cooperate with electronic tracks 21 included on the manipulation member 3, so that the manipulation member 3 can supply electrical energy to the optoelectronic devices 1 to which it is electrically connected.
- the optoelectronic device 1 may comprise a light-emitting element comprising at least one light-emitting diode (LED) able to emit and/or pick up light, and optionally an electronic control component associated with said at least one light-emitting diode , such as a transistor.
- each diode can comprise a first doped part intended to be brought into contact with a first electrode, a second doped part intended to be brought into contact with a second electrode, and an active part capable of changing state when a external parameter external to the active part is applied to the active part, the external parameter being able for example to consist in the application of a current.
- the electronic control component is in particular capable of influencing at least one external parameter associated with the active part.
- the electronic control component may for example be capable of modulating at least one emission parameter relating to the light radiation likely to be emitted by the active part.
- the manipulation member 3 comprises a body having a contact surface S2 on which is deposited a selection layer
- the body may in particular have contact pads 5 at the level of the contact surface S2, intended to be brought into contact with said at least one optoelectronic device 1 via the selection layer 11.
- the contact pads 5 may be distributed over the contact surface S2 according to a predetermined spacing DI corresponding to a spacing between two optoelectronic devices 1 arranged on a sampling substrate 9.
- the manipulation member 3 comprises at least one cooperation notch having a shape allowing interlocking of the optoelectronic device 1, or having a shape complementary to the optoelectronic device 1.
- the member manipulation 3 is configured to be able to fit together with the optoelectronic device 1.
- the manipulation member 3 may comprise a plurality of cooperation notches separated from each other by the predetermined spacing D1.
- the predetermined spacing D1 may be defined as the spacing separating two optoelectronic devices 1 on a receiving substrate 19 receiving the optoelectronic devices 1 after manipulation from the sampling substrate 9 by means of the manipulation member 3, in particular a substrate for a luminous display screen.
- the predetermined spacing D1 can be between 50 ⁇ m and 2 mm, and more particularly substantially equal to 100 ⁇ m.
- the manipulation member 3 may comprise electronic tracks 21 intended to be electrically connected with at least one electrode included in the optoelectronic device 1.
- said at least one electrode may be a conductive transparent electrode ( TCO) arranged on a functional surface SI of the optoelectronic device 1, or one of the interconnection pads 4 provided to be brought into contact with the electronic connections 20 arranged on the sampling substrate 9 or the reception substrate 19.
- TCO conductive transparent electrode
- the manipulation member 3 can supply electrical energy to each optoelectronic device 1 with which it is connected via the electronic tracks 21.
- the photosensitive element is a molecular glue
- said supply of the optoelectronic device 1 by manipulation member 3 can be made through the photosensitive element.
- the photosensitive element is not likely to produce light interference, or to interact with the light radiation generated by the optoelectronic device 1.
- the selection layer 11 consists of the photosensitive element, said photosensitive element being configured to change state locally when it is subjected to light radiation comprised in a first wavelength range, so as to to vary between a first state in which the selection layer 11 of the manipulation member 3 adheres with the optoelectronic device 1, and a second state in which the selection layer 11 of the manipulation member 3 does not adhere to the optoelectronic device 1.
- the photosensitive element is configured to change state locally when it is subjected to light radiation comprised in the first wavelength range , so as to vary from the first state to the second state.
- the photosensitive element is configured to allow the manipulation member 3 and the optoelectronic device 1 to be separated when it is subjected to light radiation comprised in the first wavelength range. More particularly, the photosensitive element can be configured to change state locally when it is subjected to light radiation emitted by the optoelectronic device 1, so as to vary between the first state and the second state. This light radiation emitted by the optoelectronic device 1 having a wavelength comprised in the first wavelength range.
- the change of local state of the photosensitive element when it is subjected to light radiation makes it possible both to carry out an operating test of the optoelectronic device 1 while allowing its detachment from the organ manipulation 3, in one step. It is therefore not necessary to carry out a test step to determine whether an optoelectronic device 1 is defective before it is transferred.
- changing state is meant a physical or chemical phenomenon which induces a structural or conformational change in the photosensitive element.
- the change of state may correspond to a softening or a hardening of the photosensitive element.
- the change of state can also correspond to a phase change of the photosensitive element.
- the photosensitive element can be configured to become liquid, or alternatively solid, or alternatively gaseous when it is subjected to light radiation in the first wavelength range, that is to say in particular when the device optoelectronics 1 emits light.
- the photosensitive element can be configured to become labile when it is subjected to light radiation in the first wavelength range, that is to say in particular when the optoelectronic device 1 emits light. Synergistically, if an optoelectronic device 1 does not emit light, for example if it is damaged, it will not be able to emit light radiation at the first wavelength range, and will therefore not be able to change the state of the selection layer 11.
- the photosensitive element can comprise a photosensitive polymer.
- the change of state can also include a change in solubility, either by partial or total polymerization, either by partial or total depolymerization, or by other mechanisms such as photocleavage, photoaddition, fragmentation, or other.
- the photosensitive element may be a positive resin such as siloxane resins, polymethacrylates, or a family of polymers exhibiting a radical polymerization mechanism or of the RAFT (Reversible Addition-Fragmentation chain Transfer) type, or other polymers such as acrylamides or polyphenylenes.
- the photosensitive polymer can comprise a photoinitiator configured to harden the photosensitive polymer or to depolymerize it when it is subjected to light radiation included in the first wavelength range.
- the first wavelength range can be between 190 nm and 2000 nm, more particularly between 365 nm and 800 nm and is in particular substantially equal to 420 nm or substantially equal to 450 nm.
- the arrangements previously described make it possible to propose a manipulation member 3 configured to move optoelectronic devices 1 via the selection layer 11.
- the selection layer 11 can moreover be removed when it is illuminated by the optoelectronic device 1 .
- the invention also relates to a method for handling at least one optoelectronic device 1 from a sampling substrate 9, and preferably intended to be fixed on a receiving face of a receiving substrate 19, such as for example a substrate for a luminous display screen, being distributed over all or part of the free surface of the reception face.
- the manipulation method comprises a step E1 of supplying the sampling substrate 9 on which the at least one optoelectronic device 1 is placed.
- the sampling substrate 9 may comprise a plurality of optoelectronic devices 1 arranged on the surface of the sampling substrate 9 according to a first spacing D1.
- the optoelectronic devices 1 can have dimensions comprised between 1 ⁇ m and 1 mm.
- the distance between optoelectronic devices 1 on the receiving face of the receiving substrate 19 is between 1 ⁇ m and 2 mm.
- Each optoelectronic device 1 has a functional surface SI and is capable of emitting light radiation comprised in a first wavelength range via this functional surface SI when it is supplied with electrical energy.
- the manipulation method also comprises a step E2 of providing a manipulation member 3 comprising a body having a contact surface S2, for example of the type of one of those described previously.
- a step E3 of chemical treatment of the contact surface S2 of the manipulation member 3 can be implemented to increase the chemical affinity of the manipulation member 3 with a photosensitive element configured to form a layer 11 during a step E4 of applying a selection layer 11.
- the chemical surface treatment step E3 can be applied to the functional surface SI of the optoelectronic device 1.
- the chemical treatment step E3 comprises the exposure of the contact surface S2 or of the functional surface SI to a plasma comprising dioxygen to generate hydroxyl bonds.
- the chemical affinity can come from electrostatic interactions, hydrophilic/hydrophobic interactions, Van der Waals interactions, or any type of weak or strong interaction.
- the chemical treatment step E3 can comprise the start of a polymerization reaction, comprising for example the formation of surface radicals, to initiate the polymerization reaction.
- the method then comprises said step E4 of applying selection layer 11 to at least one element chosen from the group comprising said contact surface S2 of manipulation member 3 and at least one optoelectronic device 1.
- the layer selection 11 consists of a photosensitive element configured to change state locally when subjected to light radiation in the first wavelength range.
- the change of state can correspond to a softening or a hardening of the photosensitive element.
- the change of state can also comprise a change in solubility either by partial or total depolymerization, or by other mechanisms such as photocleavage, photoaddition, fragmentation, or other.
- the change of state can also correspond to a phase change of the photosensitive element.
- the photosensitive element can be configured to become liquid when it is subjected to light radiation at the first wavelength range, that is to say in particular when the optoelectronic device 1 emits light.
- the photosensitive element can be configured to become labile when subjected to light radiation at the first wavelength range, that is to say in particular when the optoelectronic device 1 emits light.
- the manipulation member 3 is secured to the optoelectronic device 1 during a step E5 of bringing the manipulation member 3 into contact with said at least one optoelectronic device 1 at the layer selection 11.
- the contacting step E5 may comprise the application of a chemical or optical activation so as to increase the adhesion of the selection layer 11 with the manipulation member 3 and/or with the optoelectronic device 1.
- provision may be made for the implementation of an optical activation to be carried out by the emission of a light radiation included in a second wavelength range strictly different from the first wavelength range.
- the manipulation method may comprise a phase of transferring the optoelectronic device from the sampling substrate 9 to a receiving substrate 19, in particular a substrate for a display screen.
- This transfer phase can be implemented after step E5 of bringing the manipulation member 3 into contact.
- the transfer phase may first of all comprise a step E6 of detaching said at least one optoelectronic device 1 from the sampling substrate 9, in particular by mechanical traction applied to the body of the manipulation member 3. Then, the phase of transfer may comprise a positioning step E7 in which the contact surface S2 of the manipulation member 3 is positioned facing a receiving surface of the receiving substrate 19, for example in a relative position such that the optoelectronic devices 1 are in contact with the receiving surface of the receiving substrate 19.
- the positioning step E7 may in particular comprise the cooperation of each interconnection pad 4 with electronic connections 20 arranged on the surface of the receiving substrate 19, for example by welding.
- alignment elements such as for example alignment marks associated with optical devices or lasers, can be provided to allow the positioning of the optoelectronic devices 1 on the receiving face of the receiving substrate 19 .
- the manipulation method also comprises a step E8 of supplying said at least one optoelectronic device 1 with electrical energy, involving the emission of light radiation in the first wavelength range and the change of local state of the selection layer 11 allowing the separation of the selection layer 11 and the emitting optoelectronic device 1.
- step E8 of supply is implemented after step E5 of bringing into contact.
- step E8 of supplying electrical energy to optoelectronic device 1 is implemented after the transfer phase.
- step E6 of detachment of said at least one optoelectronic device 1 relative to the sampling substrate 9 all the optoelectronic devices 1 are detached from the sampling substrate 9.
- step E6 of detaching said at least one optoelectronic device 1 with respect to sampling substrate 9 can be implemented after step E8 of power supply.
- step E8 of supplying electrical energy to optoelectronic device 1 is therefore implemented before the transfer phase.
- step E6 of detaching said at least one optoelectronic device 1 from the sampling substrate 9 only the optoelectronic devices 1 that have not emitted light radiation in the first wavelength range are detached from the sampling substrate 9.
- the manipulation method makes it possible to remove from the sampling substrate 9 the optoelectronic devices 1 which do not emit, such as the defective optoelectronic devices 1.
- the manipulation method makes it possible to remove from the sampling substrate 9, the optoelectronic devices 1 emitting light radiation which is not included in the first wavelength range.
- the optoelectronic devices 1 detached during the detachment step E6 are not transferred during the transfer phase but are simply evacuated because these optoelectronic devices 1 do not work.
- the sampling substrate 9 can comprise a plurality of optoelectronic devices 1, where each optoelectronic device 1 of the plurality of optoelectronic devices 1 can be supplied individually with electrical energy.
- step El of supplying the sampling substrate 9 may comprise the supply of a light-emitting screen substrate comprising a plurality of optoelectronic devices 1 distributed over an emission surface of the screen substrate, the surface d
- the emission from the screen substrate can advantageously have electronic connections 20 configured to enable each optoelectronic device 1 of the plurality of optoelectronic devices 1 to be individually powered.
- the step E8 of supplying electrical energy to the optoelectronic device 1 can make it possible to place the optoelectronic device 1 selectively in an emission mode in which it emits light radiation in the first wavelength range and in a mode extinction in which it does not emit light radiation. In this way, it is possible to supply the optoelectronic devices 1 unitarily so as to cause the selection layer 11 to change state.
- the step E8 of supplying electrical energy can therefore be implemented selectively on one or more of the optoelectronic devices 1 of the plurality of optoelectronic devices 1.
- step E8 of supplying electrical energy can be applied selectively to a set of optoelectronic devices 1 selected from among the plurality of optoelectronic devices, the number of optoelectronic devices 1 of this set being greater than or equal to 1.
- step E8 of supplying electrical energy can be implemented on optoelectronic devices 1 arranged relative to each other at a predetermined distance, in particular comprised between 50 ⁇ m and 2 mm.
- the manipulation method comprises a step E9 of removing the manipulation member 3, in which the manipulation member 3 is separated from the sampling substrate 9, or from the receiving substrate 19.
- the arrangements previously described make it possible to propose a method for manipulating optoelectronic devices 1.
- the presence of the selection layer 11 makes it possible in a first case to cause the manipulation member 3 to adhere to the optoelectronic device 1, and in a second case to allow the separation of the optoelectronic device 1 and the manipulation member 3.
- the photosensitive element is configured to become labile when it is subjected to light radiation included in the first wavelength range, c ie in particular when the optoelectronic device 1 emits light.
- the manipulation method can make it possible to transfer an optoelectronic device 1 from a sampling substrate 9 to a substrate receiver 19, such as a screen substrate or a test substrate, thanks to reversible adhesion between the manipulation member 3 and the optoelectronic device 1 via the selection layer 11.
- the manipulation method can make it possible to remove from a sampling substrate 9, such as a screen substrate or a test substrate, optoelectronic devices 1 not emitting light radiation in the first wavelength range .
- a sampling substrate 9 such as a screen substrate or a test substrate
- optoelectronic devices 1 not emitting light radiation in the first wavelength range .
- This can in particular make it possible to remove defective optoelectronic devices 1 from a sampling substrate 9.
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electroluminescent Light Sources (AREA)
- Led Device Packages (AREA)
Abstract
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US18/564,825 US20240290647A1 (en) | 2021-05-31 | 2022-05-24 | Selective photo-induced transfer of good micro leds |
KR1020237042574A KR20240016980A (ko) | 2021-05-31 | 2022-05-24 | 광전자 디바이스를 위한 조작 부재 및 그러한 디바이스를 조작하기 위한 방법 |
EP22731751.8A EP4348721A1 (fr) | 2021-05-31 | 2022-05-24 | Organe de manipulation de dispositifs optoélectroniques et procédé de manipulation de tels dispositifs |
CN202280039231.6A CN117397046A (zh) | 2021-05-31 | 2022-05-24 | 用于光电子器件的操纵构件和用于操纵这种器件的方法 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR2105709A FR3123503A1 (fr) | 2021-05-31 | 2021-05-31 | Organe de manipulation de dispositifs optoélectroniques et procédé de manipulation de tels dispositifs. |
FRFR2105709 | 2021-05-31 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2022254126A1 true WO2022254126A1 (fr) | 2022-12-08 |
Family
ID=76523193
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/FR2022/050988 WO2022254126A1 (fr) | 2021-05-31 | 2022-05-24 | Organe de manipulation de dispositifs optoélectroniques et procédé de manipulation de tels dispositifs |
Country Status (6)
Country | Link |
---|---|
US (1) | US20240290647A1 (fr) |
EP (1) | EP4348721A1 (fr) |
KR (1) | KR20240016980A (fr) |
CN (1) | CN117397046A (fr) |
FR (1) | FR3123503A1 (fr) |
WO (1) | WO2022254126A1 (fr) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2017037475A1 (fr) * | 2015-09-02 | 2017-03-09 | Oculus Vr, Llc | Ensemble de dispositifs à semi-conducteurs |
WO2018005118A1 (fr) * | 2016-06-29 | 2018-01-04 | Applied Materials, Inc. | Systèmes et procédés pour le transfert de micro-dispositifs |
WO2018082100A1 (fr) * | 2016-11-07 | 2018-05-11 | Goertek. Inc | Procédé de transfert de micro-del et procédé de fabrication |
US20190181023A1 (en) * | 2017-12-13 | 2019-06-13 | Facebook Technologies, Llc | Formation of elastomeric layer on selective regions of light emitting device |
US10573544B1 (en) * | 2018-10-17 | 2020-02-25 | X-Celeprint Limited | Micro-transfer printing with selective component removal |
-
2021
- 2021-05-31 FR FR2105709A patent/FR3123503A1/fr active Pending
-
2022
- 2022-05-24 EP EP22731751.8A patent/EP4348721A1/fr active Pending
- 2022-05-24 WO PCT/FR2022/050988 patent/WO2022254126A1/fr active Application Filing
- 2022-05-24 CN CN202280039231.6A patent/CN117397046A/zh active Pending
- 2022-05-24 US US18/564,825 patent/US20240290647A1/en active Pending
- 2022-05-24 KR KR1020237042574A patent/KR20240016980A/ko unknown
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2017037475A1 (fr) * | 2015-09-02 | 2017-03-09 | Oculus Vr, Llc | Ensemble de dispositifs à semi-conducteurs |
WO2018005118A1 (fr) * | 2016-06-29 | 2018-01-04 | Applied Materials, Inc. | Systèmes et procédés pour le transfert de micro-dispositifs |
WO2018082100A1 (fr) * | 2016-11-07 | 2018-05-11 | Goertek. Inc | Procédé de transfert de micro-del et procédé de fabrication |
US20190181023A1 (en) * | 2017-12-13 | 2019-06-13 | Facebook Technologies, Llc | Formation of elastomeric layer on selective regions of light emitting device |
US10573544B1 (en) * | 2018-10-17 | 2020-02-25 | X-Celeprint Limited | Micro-transfer printing with selective component removal |
Also Published As
Publication number | Publication date |
---|---|
US20240290647A1 (en) | 2024-08-29 |
FR3123503A1 (fr) | 2022-12-02 |
KR20240016980A (ko) | 2024-02-06 |
EP4348721A1 (fr) | 2024-04-10 |
CN117397046A (zh) | 2024-01-12 |
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