WO2022253281A1 - 一种太阳能电池金属电极及其制备方法 - Google Patents

一种太阳能电池金属电极及其制备方法 Download PDF

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WO2022253281A1
WO2022253281A1 PCT/CN2022/096680 CN2022096680W WO2022253281A1 WO 2022253281 A1 WO2022253281 A1 WO 2022253281A1 CN 2022096680 W CN2022096680 W CN 2022096680W WO 2022253281 A1 WO2022253281 A1 WO 2022253281A1
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electrode
solar cell
silver paste
metal
dot
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French (fr)
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侯良龚
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Longi Green Energy Technology Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/215—Geometries of grid contacts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/146—Back-junction photovoltaic cells, e.g. having interdigitated base-emitter regions on the back side
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/128—Annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/219—Arrangements for electrodes of back-contact photovoltaic cells

Definitions

  • the present application relates to the field of photovoltaic technology, in particular to a perovskite solar cell and a manufacturing method thereof.
  • the electrode is a key component of the solar cell, mainly an array grid structure with a line width of 20-50 microns (auxiliary grid) and 100-500 microns (main grid).
  • the preparation of solar cell electrodes generally adopts the screen printing silver paste process, and the obtained electrode line width is more than 30 ⁇ m. Because the main component of silver paste is silver, the cost is high. At the same time, the conductivity of silver paste is much lower than that of metallic silver. In order to achieve a certain conductivity, relatively thick electrode grid lines are required, which requires more raw materials. Further Increased cost; and when the electrodes are thicker, more sunlight will be blocked.
  • the common battery structure has an insulating layer on the surface.
  • the silver paste collects current through the high-temperature sintering process after screen printing, that is, the silver paste penetrates the insulating layer during high-temperature sintering to achieve contact with the conductive layer.
  • the high-temperature silver paste penetrates the SiN-AlO layer of the insulating layer during the sintering process and contacts the P+ layer.
  • the main part of the silver paste grid line plays the role of collecting and conducting current on the insulating layer.
  • the silver paste material is expensive (5000-7000 yuan/kg), and it is difficult to prepare very fine electrodes (such as less than 20 microns) in the screen printing process.
  • the purpose of this application is to provide a solar cell metal electrode.
  • Another object of the present application is to provide a method for preparing the above solar cell metal electrode.
  • the present application also provides a solar cell, which contains the solar cell metal electrode described in the present application.
  • the application provides a solar cell metal electrode, which includes a point electrode and a line electrode, wherein:
  • the dot electrode is an array dot silver paste, and the lower surface of the array dot silver paste is conducted with the conductive layer inside the solar cell;
  • the linear electrodes are linear metals covering the point electrodes and conducting with the point electrodes.
  • the lower surface of the array dot silver paste refers to the side that is in contact with the solar cell sheet.
  • the single point of the dot-shaped silver paste when the single point of the dot-shaped silver paste is in the shape of a square, its size is 50-500 ⁇ m in length, 25-100 ⁇ m in width, and 1-10 ⁇ m in height ;
  • the distance between the dotted silver pastes is 0.05-2.0mm in the length direction, and the distance between the widthwise ends is 0.5-2.0mm;
  • the dotted silver paste when the dotted silver paste is cylindrical, its height is 1-10 ⁇ m, and its diameter 25-200 ⁇ m, the distance between point and point center is 0.05-2.0mm;
  • the width of the linear electrode is 1 ⁇ m-1000 ⁇ m;
  • the width of the linear electrodes is preferably 1 ⁇ m-100 ⁇ m, more preferably 1 ⁇ m-20 ⁇ m; when preparing the main grid of crystalline silicon solar cells, the width of the linear electrodes is preferably 100 ⁇ m-100 ⁇ m. 500 ⁇ m.
  • the metal electrode of the solar cell of the present application wherein the metal used in the linear electrode includes a single metal, or an alloy, or a stack of multiple metals, or a metal and an alloy stack, or an alloy and an alloy superposition; such as copper, aluminum and other metals.
  • the present application also provides a method for preparing a solar cell metal electrode, the method comprising:
  • the laser etching polymer film is used to prepare the mask plate
  • a mask plate is fixed on the sintered battery sheet, and a metal film is plated on the mask plate to grow a wire electrode on the sintered battery sheet.
  • the preparation method of the metal electrode of the solar cell of the present application wherein, the method of printing dotted silver paste on the battery sheet includes screen printing, and the method of coating a metal film on the mask includes physical vapor deposition;
  • the PVD method when the physical vapor deposition method is used to coat the metal film on the mask plate, the PVD method includes a single PVD process or a combination of several PVD processes.
  • the preparation method of the solar cell metal electrode of the present application wherein the drying temperature is 100°C-300°C, the time is 20s-30s; the sintering temperature is 300°C-750°C, and the sintering time is 50s -70s.
  • the main function of sintering is to make the lower surface of the dotted silver paste pierce the insulating layer on the surface of the battery sheet and conduct with the conductive layer inside the battery sheet, while the upper surface of the dotted silver paste is exposed. After the sintering process, an array of silver paste dots are left on the surface of the battery.
  • the method for preparing a solar cell metal electrode of the present application wherein the thickness of the polymer film is 1 ⁇ m-500 ⁇ m.
  • the preparation method of the metal electrode of the solar cell of the application wherein, the material of the polymer film is polyethylene terephthalate (PET), polyolefin film (PO), polyvinyl chloride (PVC), or other polymer films that meet the requirements.
  • PET polyethylene terephthalate
  • PO polyolefin film
  • PVC polyvinyl chloride
  • the polymer film needs to meet the requirements of temperature resistance and expansion coefficient. The higher the temperature resistance of the polymer film, the better. Considering the cost problem, the polymer film can withstand high temperatures above 50°C, preferably above 60°C. , more preferably above 100°C; the thermal expansion coefficient of the polymer film is ⁇ 70 ⁇ 10-6m/K.
  • the polymer film can be a film without adhesive properties, or a polymer film with adhesive properties, which is commonly referred to as adhesive tape.
  • the preparation method of the metal electrode of the solar cell of the present application wherein, the process of preparing the mask plate includes using a laser, preferably a laser with a pulse width of ps order to prepare the required linear electrode on the polymer film Shaped slits.
  • the method for preparing the metal electrode of the solar cell of the present application wherein, the width of the slit of the laser-etched polymer film (that is, the width of the prepared electrode line) is 1 ⁇ m-1000 ⁇ m.
  • the slit width is preferably 1 ⁇ m-100 ⁇ m, more preferably 1 ⁇ m-20 ⁇ m; when preparing main grids for crystalline silicon solar cells, the slit width is preferably 100 ⁇ m-500 ⁇ m.
  • the preparation method of the metal electrode of the solar cell of the present application wherein, the method for fixing the polymer film mask on the sintered battery sheet includes the use of double-sided adhesive tape, glue, fixed slots, carrier One or more combinations in the film platform. If the mask plate uses adhesive tape with adhesive properties, the fixing method can be direct pasting.
  • the solar cells include devices that have been prepared with one or more PN junctions and can generate photovoltaic effects.
  • the method for preparing a solar cell metal electrode of the present application wherein the metal used includes a single metal, or an alloy, or a stack of multiple metals, or a stack of metal and alloy, or a stack of alloy and alloy .
  • the preparation method of the metal electrode of the solar cell of the present application wherein, after the linear electrode of the desired shape (that is, a thin line basically consistent with the shape of the slit of the mask plate) can be grown on the solar cell sheet, Remove the mask.
  • the linear electrode of the desired shape that is, a thin line basically consistent with the shape of the slit of the mask plate
  • the present application also provides a solar cell, which includes the solar cell metal electrode described in the present application.
  • the present application also provides a method for preparing a solar cell, which includes the process of preparing a solar cell metal electrode according to the method for preparing a solar cell metal electrode described in the present application.
  • this application proposes a new type of solar battery electrode, a mixed use scheme of silver paste + cheap metal, with cheap metal as the main body and silver paste as the auxiliary.
  • the electrode and its preparation method are provided.
  • the solar cell metal electrode and its preparation method have the following advantages:
  • the slits prepared by laser can be as thin as 1-20 ⁇ m or even 1-10 ⁇ m, which is thinner than the existing printing process (30 ⁇ m-80 ⁇ m), and the shading is smaller, and the efficiency can be increased by more than 1%. control;
  • the prepared electrode has high conductivity: the conductivity of the metal used is higher than that of silver paste;
  • the solar cell metal electrode provided by this application adopts a double-layer metal electrode structure, and the lower layer adopts a point-contact burn-through paste to ensure contact resistance while effectively reducing metal-semiconductor recombination.
  • the upper electrode uses a polymer mask plate-evaporation
  • the wire-type pure metal electrode obtained by the process provides excellent wire resistance.
  • Fig. 1 is the solar cell prepared by the present application.
  • Fig. 2 is a mask prepared by the present application.
  • FIG. 3 is a schematic diagram of fixing the mask plate on the sintered battery sheet.
  • FIG. 4 is a flow chart of solar cell preparation in Example 1 of the present application.
  • FIG. 5 is a flow chart of the preparation of solar cells in Examples 2-3 of the present application.
  • Fig. 6 is a flow chart of solar cell preparation in Embodiment 4 of the present application.
  • 1 linear electrode
  • 1' point/segment electrode
  • 2 antireflection layer SiNx
  • 3 passivation layer
  • 4 P+ emitter
  • 5 PET film
  • 6 processed on PET film Pattern
  • 7 crystalline silicon cell.
  • TOPCon solar cell comprises crystalline silicon solar cell 7 and metal electrode, and wherein, crystalline silicon solar cell 7 comprises antireflection layer SiNx 2 , a passivation layer 3 and a P+ emitter 4; the metal electrodes include a linear electrode 1 and a point electrode 1'.
  • the preparation method of described TOPCon solar cell auxiliary gate electrode comprises (as shown in Figure 4):
  • the dot electrode 1' pattern is distributed in a dot array.
  • the dot electrode 1' is cylindrical in shape with a thickness (height) of 3 ⁇ m and a diameter of 0.05 mm. 1mm, the distance between the point parallel to the busbar direction and the center of the point is 0.1mm.
  • the attachment method uses double-sided tape or glue, and the double-sided tape or glue must avoid the step (3).
  • the linear electrode 1 is prepared by a physical vapor deposition process, specifically: first plating Ni with a thickness of 50 nm by sputtering, and then plating Al with a thickness of 5 ⁇ m by evaporation.
  • the amount of silver paste for the auxiliary grid is less than 10% of the current process. Significantly save the amount of expensive silver paste.
  • the shading is about 70% of the current process, increasing the battery efficiency.
  • the distance between the auxiliary grid lines is reduced from about 1.5mm to 1mm, which can increase the collection of current.
  • the present embodiment provides another kind of electrode of a kind of TOPCon solar cell and preparation method thereof, as shown in Figure 1,
  • TOPCon solar cell comprises crystalline silicon cell sheet 7 and metal electrode, and wherein, crystalline silicon cell comprises antireflection layer SiNx 2, Passivation layer 3 and P+ emitter 4; metal electrodes include linear electrodes 1 and point electrodes 1'.
  • the preparation method of the auxiliary grid electrode of the TOPCon solar cell comprises (as shown in Figure 5):
  • the pattern of dot electrode 1' adopts array distribution, the shape of single point of dot electrode 1' is square, its thickness (height) is 2 ⁇ m, length is 0.2mm, width is 0.04mm, two dots of silver paste single point length direction The end pitch is 0.5 mm, and the end pitch in the width direction is 1.6 mm.
  • Preparation of polymer film mask use laser technology to carve out a designed slit pattern on a 12 ⁇ m thick PET film.
  • the pattern matches the position and spacing of the dot array, that is, the line spacing is about 1.6mm and the line width 20 ⁇ m, as shown in Figure 2.
  • the attachment method adopts double-sided adhesive tape or glue, and the double-sided adhesive tape must avoid the steps described in step (3). slit.
  • the amount of auxiliary grid silver paste is less than 5% of the current process. Significantly save the amount of expensive silver paste. At the same time, the shading is 60% of the current process, increasing the battery efficiency.
  • Example 3 PERC battery auxiliary grid
  • the present embodiment provides a kind of PERC solar cell, as shown in Figure 1, it comprises crystalline silicon solar cell 7 and metal electrode, and wherein, crystalline silicon solar cell 7 comprises antireflection layer SiNx 2, passivation layer 3 and P+ emitter 4; Metal electrodes include linear electrodes 1 and point electrodes 1'.
  • the preparation method of the auxiliary grid of the PERC battery includes (as shown in Figure 5):
  • the pattern of point electrode 1' adopts array distribution, the single point shape of point electrode 1' is square, its thickness (height) is 5 ⁇ m, length is 0.5mm, width is 0.07mm, two point-shaped silver paste single point length direction end The pitch is 1.0 mm, and the pitch between the ends in the width direction is 1 mm.
  • the attachment method adopts double-sided adhesive tape or glue, and the double-sided adhesive tape must avoid the steps described in step (3). slit.
  • the amount of auxiliary grid silver paste is less than 7% of the current process. Significantly save the amount of expensive silver paste. At the same time, the shading is 80% of the current process, increasing the battery efficiency.
  • the present embodiment provides a kind of PERC solar cell, as shown in Figure 1, it comprises crystalline silicon cell sheet 7 and metal electrode, and wherein, crystalline silicon cell comprises antireflection layer SiNx 2, passivation layer 3 and P+emitter 4;
  • the metal electrodes include linear electrodes 1 and point electrodes 1'.
  • the preparation method of described PERC solar cell electrode comprises (as shown in Figure 6):
  • the pattern of point electrode 1' adopts array distribution, the single point shape of point electrode 1' is square shape, its thickness (height) is 3 ⁇ m, length is 0.1mm, width is 0.05mm, two point-shaped silver paste single point length direction The end spacing is 0.3 mm, and the end spacing in the width direction is 1 mm, as shown in Figure 2.
  • Preparation of polymer film mask plate Use laser technology to carve out a designed slit pattern on a 50 ⁇ m thick PET film.
  • the pattern matches the position and spacing of the dot array, that is, the layout of 5 busbars, the width of the busbar 300 ⁇ m, the main grid spacing is about 31mm, the auxiliary grid spacing is about 1mm, and the auxiliary grid line width is 25 ⁇ m.
  • the attachment method adopts double-sided adhesive tape or glue, and the double-sided adhesive tape must avoid the steps described in step (3). slit.
  • the amount of silver paste for the auxiliary grid is less than 10% of the current process. Significantly save the amount of expensive silver paste. At the same time, the shading is about 70% of the current process, increasing the battery efficiency.

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Abstract

本发明提供了一种太阳能电池金属电极及其制备方法。首先，本发明提供了一种太阳能电池金属电极，其包括点状电极和线状电极，其中：点状电极为阵列点状银浆，所述阵列点状银浆的下表面与太阳能电池片内部的导电层导通；线状电极为线状金属，其覆盖在点状电极上并与点状电极导通。本发明还提供了所述太阳能电池金属电极的制备方法。本发明提供的太阳能电池采用双层金属电极结构，在满足电极电阻要求的同时，大幅减低银浆的用量，用廉价金属(铝、铜等)代替，从而大幅减少成本；同时，本发明制备的电极宽度小于银浆栅线的宽度，从而减少遮光面积，提高转化效率，减少对晶硅的破坏，具有很大应用前景。

Description

一种太阳能电池金属电极及其制备方法
本申请要求在2021年6月3日提交中国专利局、申请号为202110618125.0、发明名称为“一种太阳能电池金属电极及其制备方法”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本申请涉及光伏技术领域，特别是涉及一种钙钛矿太阳能电池及其制作方法。
背景技术
太阳能电池能够将太阳能转化为电能，是清洁能源的重要来源。电极是太阳能电池的关键组件，主要为线宽20-50微米(辅栅)以及100-500微米(主栅)构成的阵列格栅结构。
目前太阳能电池电极的制备普遍采用丝网印刷银浆工艺，得到的电极线宽在30μm以上。由于银浆主要成分是银，成本较高，与此同时，银浆导电率比金属银低很多，为了实现一定的导电率，需要相对比较粗的电极栅线，从而需要较多的原材料，进一步增加了成本；而且电极较粗时，会导致更多的太阳光被遮挡。
现在常见电池结构表面有绝缘层，银浆收集电流是通过丝网印刷后的高温烧结工艺完成，也即高温烧结过程中银浆刺穿绝缘层，实现与导电层接触。
以TOPCon电池举例，高温银浆在烧结过程中刺穿绝缘层的SiN-AlO层，与P+层接触。银浆栅线主体部分在绝缘层上起到收集、导通电流作用。
但是，该工艺中，银浆材料贵(5000-7000元/公斤)，且，丝网印刷工艺很难制备出极细的电极(比如小于20微米)。
申请内容
本申请的目的在于提供一种太阳能电池金属电极。
本申请的另一目的在于提供上述太阳能电池金属电极的制备方法。
本申请还提供了一种太阳能电池，其含有本申请所述的太阳能电池金属电极。
一方面，本申请提供了一种太阳能电池金属电极，其包括点状电极和线状电极，其中：
点状电极为阵列点状银浆，所述阵列点状银浆的下表面与太阳能电池内部的导电层导通；
线状电极为线状金属，其覆盖在点状电极上并与点状电极导通。
根据本申请的具体实施方案，本申请中的太阳能电池金属电极中，阵列点状银浆的下表面是指与太阳能电池片接触接触的一面。
根据本申请的具体实施方案，本申请的太阳能电池金属电极，其中所述点状银浆单点为方块状时，其尺寸长为50-500μm，宽为25-100μm，高度为1-10μm；点状银浆之间的距离长度方向端间距为0.05-2.0mm，宽度方向端间距为0.5-2.0mm；所述点状银浆单点为圆柱状时，其高度为1-10μm，直径为25-200μm，点与点中心之间的间距为0.05-2.0mm；
线状电极的宽度为1μm-1000μm；
具体地，制备晶硅太阳能电池辅栅或者普通栅线时，线状电极宽度优选为1μm-100μm，进一步优选为1μm-20μm；制备晶硅太阳能电池主栅时，线状电极宽度优选为100μm-500μm。
根据本申请的具体实施方案，本申请的太阳能电池金属电极，其中，所述线状电极采用的金属包括单一金属、或者合金、或者多种金属的叠加、或金属与合金叠加、或者合金与合金的叠加；例如铜、铝等金属。
另一方面，本申请还提供了一种太阳能电池金属电极的制备方法，该方法包括：
在电池片上印刷点状银浆，烘干后烧结，使得点状银浆刺穿电池表面绝缘层与电池片内部导电层导通；
依据所需线状电极形状采用激光刻蚀高分子薄膜制备掩模版；
将掩模版固定在烧结后的电池片上，在掩模版上镀金属膜，以在烧结后的电池片上生长线状电极。
根据本申请的具体实施方案，本申请太阳能电池金属电极的制备方法，其 中，在电池片上印刷点状银浆的方法包括丝网印刷，在掩模版上镀金属膜的方法包括物理气相沉积法；其中，采用物理气相沉积方法在掩模版上镀金属膜时，PVD方法包括单一的PVD工艺或者几种PVD工艺结合的方法。
根据本申请的具体实施方案，本申请太阳能电池金属电极的制备方法，其中，其中烘干温度为100℃-300℃，时间为20s-30s；烧结温度为300℃-750℃，烧结时间为50s-70s。烧结的主要作用在于使点状银浆的下表面刺穿电池片表面的绝缘层，与电池片内部的导电层相导通，而点状银浆的上表面暴露。烧结工艺后，电池表面留下阵列点状银浆点。
根据本申请的具体实施方案，本申请太阳能电池金属电极的制备方法，其中，所述高分子薄膜的厚度为1μm-500μm。
根据本申请的具体实施方案，本申请太阳能电池金属电极的制备方法，其中，所述高分子薄膜的材质为聚对苯二甲酸乙二酯(PET)、聚烯烃薄膜(PO)、聚氯乙烯(PVC)，或者其他满足要求的高分子薄膜。所述高分子薄膜需满足耐温和膨胀系数方面的要求，其中高分子薄膜的耐温性能越高越好，考虑到成本问题，所述高分子薄膜耐50℃以上高温，优选为耐60℃以上，更优选为耐100℃以上；所述高分子薄膜的热膨胀系数≤70×10-6m/K。高分子薄膜可以是不带粘贴性能的薄膜，也可是带粘贴性能的高分子薄膜，也即通常所说的胶带。
根据本申请的具体实施方案，本申请太阳能电池金属电极的制备方法，其中，制备掩模版的过程包括采用激光，优选脉冲宽度在ps量级的激光在高分子薄膜上制备出需要的线状电极形状的狭缝。采用本申请的方法，能够制作加工精细的高分子薄膜掩模版。
根据本申请的具体实施方案，本申请太阳能电池金属电极的制备方法，其中，激光刻蚀高分子薄膜的狭缝宽度(即所制备出的电极线的宽度)1μm-1000μm。具体地，制备晶硅太阳能电池辅栅或者普通栅线时，狭缝宽度优选为1μm-100μm，进一步优选为1μm-20μm；制备晶硅太阳能电池主栅时，狭缝宽度优选为100μm-500μm。
根据本申请的具体实施方案，本申请太阳能电池金属电极的制备方法，其中，将高分子薄膜掩模版固定在烧结后的电池片上的方法，包括采用双面胶、 胶水、固定的卡槽、载片台中的一种或多种的组合方式。如果掩模版采用的是带粘贴性能的胶带时，则固定方法可为直接粘贴。
本申请中，所述太阳能电池片包括已经制备完一个或多个PN结并能产生光生伏特效应的器件统称。
根据本申请的具体实施方案，本申请太阳能电池金属电极的制备方法，其中，所采用的金属包括单一金属、或者合金、或者多种金属的叠加、或金属与合金叠加、或者合金与合金的叠加。
根据本申请的具体实施方案，本申请太阳能电池金属电极的制备方法，其中，可在太阳能电池片上生长出所需形状(即与掩模版狭缝形状基本一致的细线)的线状电极后，去除掩模版。
此外，本申请还提供了一种太阳能电池，其包括本申请中所述的太阳能电池金属电极。
本申请还提供了一种太阳能电池的制备方法，其包括按照本申请所述的太阳能电池金属电极的制备方法制备太阳能电池金属电极的过程。
综上所述，本申请提出了一种新型太阳能电池电极，银浆+廉价金属混合使用方案，以廉价金属为主体，银浆辅助。同时提供了该电极及其制备方法。所述太阳能电池金属电极及其制备方法具有以下优点：
1、制作成本低：本申请降低80％以上的银浆用量。所用的掩模版材料、廉价金属材料、激光制备工艺以及PVD工艺成本均较低；
2、电池转换效率高：激光制备的狭缝可以细至1-20μm甚至1-10μm，比现有印刷工艺(30μm-80μm)更细，遮光更小，可提高效率1％以上，且精确可控；
3、制备得到的电极导电率高：所用金属的导电率高于银浆；
4、本申请提供的太阳能电池金属电极，采用双层金属电极结构，下层采用点接触式烧穿型浆料，保证接触电阻的同时有效降低金属-半导体复合，上层电极采用高分子掩模版-蒸发工艺获得的线式纯金属电极，提供优良的线电阻。
附图说明
此处所说明的附图用来提供对本申请的进一步理解，构成本申请的一部分， 本申请的示意性实施例及其说明用于解释本申请，并不构成对本申请的不当限定。在附图中：
图1为本申请制备的太阳能电池。
图2为本申请制备的掩模版。
图3为将掩模版固定在烧结后的电池片上的示意图。
图4为本申请实施例1中太阳能电池制备流程图。
图5为本申请实施例2-3中太阳能电池制备流程图。
图6为本申请实施4中太阳能电池制备流程图。
图中，1：线状电极，1＇：点/线段状电极，2：减反层SiNx，3：钝化层，4：P+发射极，5：PET薄膜，6：在PET薄膜上加工的图案，7：晶硅电池片。
具体实施方式
为了对本申请的技术特征、目的和有益效果有更加清楚的理解，现对本申请的技术方案进行以下详细说明，但不能理解为对本申请的可实施范围的限定。
实施例1 TOPCon太阳能电池正面电极辅栅及其制备方法
本实施例提供了一种TOPCon太阳能电池电极辅栅及其制备方法，如图1所示，TOPCon太阳能电池包括晶硅电池片7和金属电极，其中，晶硅电池片7包括减反层SiNx 2、钝化层3和P+发射极4；金属电极包括线状电极1和点状电极1＇。所述TOPCon太阳能电池辅栅电极的制备方法包括(如图4所示)：
(1)对晶硅电池片7进行清洗，去除晶硅电池片7表面的污渍，在TOPCon太阳能晶硅电池片7正面丝网印刷点状电极1＇银浆料。点状电极1＇图案采用点状阵列分布，点状电极1＇单点形状为圆柱状，其厚度(高度)为3μm、直径为0.05mm，垂直主栅方向点与点中心之间的间距为1mm，平行主栅方向点与点中心之间的间距为0.1mm。
(2)烘干，烧结：将印刷完点状电极后的晶硅电池片7在100℃升温至300℃过程中烘干25s，300℃升至700℃过程中烧结60s。
(3)制备高分子薄膜掩膜版：采用激光工艺在30μm厚PET薄膜上刻划出设计好的狭缝图案，图案与点阵列的位置和间距相匹配，也即线距1mm、 线宽15μm，如图2所示。
(4)用机械手将PET薄膜5贴附在晶硅电池片7正面上，如图3所示，贴附方式采用双面胶或者胶水，双面胶或者胶水须避开步骤(3)中所述的狭缝图案。
(5)采用物理气相沉积工艺制备线状电极1，具体为：先用溅射的方法镀50nm厚的Ni，然后用蒸发的方法镀5μm厚的Al。
(6)除去PET薄膜5。
该实施案例中，辅栅银浆用量为现在工艺的10％以下。大幅节省昂贵的银浆用量。与此同时，遮光为现在工艺的约70％，增加电池效率。与此同时，辅栅线之间的距离由现在的1.5mm左右降低为1mm，可以增加对电流的收集。
实施例2 TOPCon电池正面电极辅栅及其制备方法
本实施例提供了一种TOPCon太阳能电池另一种电极及其制备方法，如图1所示，TOPCon太阳能电池包括晶硅电池片7和金属电极，其中，晶硅电池包括减反层SiNx 2、钝化层3和P+发射极4；金属电极包括线状电极1和点状电极1＇。所述TOPCon太阳能电池辅栅电极的制备方法包括(如图5所示)：
(1)对晶硅电池片7进行清洗，去除晶硅电池片7表面的污渍，在TOPCon太阳能晶硅电池片7正面丝网印刷点状电极1＇银浆料。点状电极1＇图案采用阵列分布，点状电极1＇单点形状为方块状，其厚度(高度)为2μm、长度为0.2mm、宽度为0.04mm，两点状银浆单点长度方向端间距为0.5mm，宽度方向端间距为1.6mm。
(2)烘干，烧结：将印刷完点状电极后的晶硅电池片7在100℃升温至300℃过程中烘干25s，300℃升至700℃过程中烧结60s。
(3)制备高分子薄膜掩膜版：采用激光工艺将12μm厚PET薄膜刻划出设计好的狭缝图案，图案与点阵列的位置和间距相匹配，也即线距约1.6mm、线宽20μm，如图2所示。
(4)用机械手将PET薄膜5贴附在晶硅电池片7正面上，如图3所示，贴附方式采用双面胶或者胶水，双面胶须避开步骤(3)中所述的狭缝。
(5)采用PVD工艺沉积线状电极1，具体为：先用溅射的方法镀50nm厚的Ni，然后用蒸发的方法镀6μm厚的Al。
(6)除去PET薄膜5。
该实施案例中，辅栅银浆用量为现在工艺的5％以下。大幅节省昂贵的银浆用量。与此同时，遮光为现在工艺的60％，增加电池效率。
实施例3 PERC电池辅栅
本实施例提供了一种PERC太阳能电池，如图1所示，其包括晶硅电池片7和金属电极，其中，晶硅电池片7包括减反层SiNx 2、钝化层3和P+发射极4；金属电极包括线状电极1和点状电极1＇。所述PERC电池辅栅的制备方法包括(如图5所示)：
(1)对晶硅电池片7进行清洗，去除晶硅电池片7表面的污渍，在PERC太阳能晶硅电池片7正面丝网印刷点状电极浆料。点状电极1＇图案采用阵列分布，点状电极1＇单点形状为方块状，其厚度(高度)5μm、长度为0.5mm、宽度为0.07mm，两点状银浆单点长度方向端间距为1.0mm，宽度方向端间距为1mm。
(2)烘干，烧结：将印刷完点状电极后的晶硅电池片7在100℃升温至300℃过程中烘干25s，300℃升至700℃过程中烧结60s。
(3)制备高分子薄膜掩膜版：采用激光工艺将35μm厚PET薄膜刻划出设计好的狭缝图案，图案与点阵列的位置和间距相匹配，也即线距约1mm、线宽30μm，如图2所示。
(4)用机械手将PET薄膜5贴附在晶硅电池片7正面上，如图3所示，贴附方式采用双面胶或者胶水，双面胶须避开步骤(3)中所述的狭缝。
(5)采用PVD工艺沉积线状电极1，具体为：先用溅射的方法镀50nm厚的Ni，然后用蒸发的方法镀4μm厚的Al。
(6)除去PET薄膜5。
该实施案例中，辅栅银浆用量为现在工艺的7％以下。大幅节省昂贵的银浆用量。与此同时，遮光为现在工艺的80％，增加电池效率。
实施方式4 PERC电池主辅栅
本实施例提供了一种PERC太阳能电池，如图1所示，其包括晶硅电池片7和金属电极，其中，晶硅电池包括减反层SiNx 2、钝化层3和P+发射极4；金属电极包括线状电极1和点状电极1＇。所述PERC太阳能电池电极的制备 方法包括(如图6所示)：
(1)对晶硅电池片7进行清洗，去除晶硅电池片7表面的污渍，在PERC太阳能晶硅电池片7正面丝网印刷点状电极浆料。点状电极1＇图案采用阵列分布，点状电极1＇单点形状为方块状，其厚度(高度)为3μm、长度为0.1mm、宽度为0.05mm，两点状银浆单点长度方向端间距为0.3mm，宽度方向端间距为1mm，如图2所示。
(2)烘干，烧结：将印刷完点状电极后的晶硅电池片7在100℃升温至300℃过程中烘干25s，300℃升至700℃过程中烧结60s。
(3)制备高分子薄膜掩膜版：采用激光工艺将50μm厚PET薄膜刻划出设计好的狭缝图案，图案与点阵列的位置和间距相匹配，也即5主栅布局，主栅宽度300μm，主栅间距约31mm，辅栅线距约1mm，辅栅线宽25μm。
(4)用机械手将PET薄膜5贴附在晶硅电池片7正面上，如图3所示，贴附方式采用双面胶或者胶水，双面胶须避开步骤(3)中所述的狭缝。
(5)采用PVD工艺沉积线状电极1，具体为：先用溅射的方法镀50nm厚的Ni，然后采用蒸发的方法镀4μm厚的Al。
(6)除去PET薄膜5。
该实施案例中，辅栅银浆用量为现在工艺的10％以下。大幅节省昂贵的银浆用量。与此同时，遮光为现在工艺的约70％，增加电池效率。

Claims (10)

  1. 一种太阳能电池金属电极，其包括点状电极和线状电极，其中：
    点状电极为阵列点状银浆，所述阵列点状银浆的下表面与太阳能电池片内部的导电层导通；
    线状电极为线状金属，其覆盖在点状电极上并与点状电极导通。
  2. 根据权利要求1所述的太阳能电池金属电极，其中，所述点状银浆单点为方块状时，其尺寸长为50-500μm，宽为25-100μm，高度为1-10μm；点状银浆之间的距离长度方向端间距为0.05-2.0mm，宽度方向端间距为0.5-2.0mm；所述点状银浆单点为圆柱状时，其高度为1-10μm，直径为25-200μm，点与点中心之间的间距为0.05-2.0mm；
    线状电极的宽度为1μm-1000μm；
    具体地，制备晶硅太阳能电池辅栅或者普通栅线时，线状电极宽度优选为1μm-100μm，进一步优选为1μm-20μm；制备晶硅太阳能电池主栅时，线状电极宽度优选为100μm-500μm。
  3. 根据权利要求1所述的太阳能电池金属电极，其中，所述线状电极采用的金属包括单一金属、或者合金、或者多种金属的叠加、或金属与合金叠加、或者合金与合金的叠加。
  4. 权利要求1-3中任一项所述的太阳能电池金属电极的制备方法，该方法包括：
    在电池片上印刷阵列点状银浆，烘干后烧结，使得点状银浆刺穿电池表面绝缘层与电池片内部导电层导通；
    依据所需线状电极形状采用激光刻蚀高分子薄膜制备掩模版；
    将掩模版固定在烧结后的电池片上，在掩模版上镀金属膜，以在烧结后的电池片上生长线状电极。
  5. 根据权利要求4所述的方法，其中在电池片上印刷点状银浆的方法包括丝网印刷，在掩模版上镀金属膜的方法包括物理气相沉积法。
  6. 根据权利要求4所述的方法，其中烘干温度为100℃-300℃，时间为20s-30s；烧结温度为300℃-750℃，烧结时间为50s-70s。
  7. 根据权利要求4所述的方法，其中所述高分子薄膜的厚度为1μm-500μm。
  8. 根据权利要求4所述的方法，其中制备掩模版的过程包括采用激光在高分子薄膜上制备出需要的线状电极形状的狭缝。
  9. 根据权利要求4所述的方法，其中所采用的金属包括单一金属、或者合金、或者多种金属的叠加、或金属与合金叠加、或者合金与合金的叠加。
  10. 一种太阳能电池，其含有权利要求1或2中所述的太阳能电池金属电极。
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Publication number Priority date Publication date Assignee Title
CN118173627A (zh) * 2024-04-25 2024-06-11 晶科能源(上饶)有限公司 太阳能电池及其制作方法、光伏组件

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102569506A (zh) * 2011-12-29 2012-07-11 广东爱康太阳能科技有限公司 一种采用硅烷掩膜制备太阳能电池金属电极的方法
CN103137791A (zh) * 2013-03-13 2013-06-05 中国科学院上海微系统与信息技术研究所 湿法沉积和低温热处理相结合制备异质结太阳电池方法
CN104810423A (zh) * 2015-04-24 2015-07-29 苏州中来光伏新材股份有限公司 新型无主栅高效率背接触太阳能电池和组件及制备工艺
CN105914249A (zh) * 2016-06-27 2016-08-31 泰州乐叶光伏科技有限公司 全背电极接触晶硅太阳能电池结构及其制备方法
CN106057923A (zh) * 2016-07-26 2016-10-26 晶澳（扬州）太阳能科技有限公司 一种背接触太阳能电池及太阳能电池组件

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102569506A (zh) * 2011-12-29 2012-07-11 广东爱康太阳能科技有限公司 一种采用硅烷掩膜制备太阳能电池金属电极的方法
CN103137791A (zh) * 2013-03-13 2013-06-05 中国科学院上海微系统与信息技术研究所 湿法沉积和低温热处理相结合制备异质结太阳电池方法
CN104810423A (zh) * 2015-04-24 2015-07-29 苏州中来光伏新材股份有限公司 新型无主栅高效率背接触太阳能电池和组件及制备工艺
CN105914249A (zh) * 2016-06-27 2016-08-31 泰州乐叶光伏科技有限公司 全背电极接触晶硅太阳能电池结构及其制备方法
CN106057923A (zh) * 2016-07-26 2016-10-26 晶澳（扬州）太阳能科技有限公司 一种背接触太阳能电池及太阳能电池组件

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024235143A1 (zh) * 2023-05-16 2024-11-21 隆基绿能科技股份有限公司 一种太阳能电池及其制备方法

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