WO2022244717A1 - Composition for forming polyimide-containing part, joined body manufacturing method, joined body, device manufacturing method and device - Google Patents
Composition for forming polyimide-containing part, joined body manufacturing method, joined body, device manufacturing method and device Download PDFInfo
- Publication number
- WO2022244717A1 WO2022244717A1 PCT/JP2022/020338 JP2022020338W WO2022244717A1 WO 2022244717 A1 WO2022244717 A1 WO 2022244717A1 JP 2022020338 W JP2022020338 W JP 2022020338W WO 2022244717 A1 WO2022244717 A1 WO 2022244717A1
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- WO
- WIPO (PCT)
- Prior art keywords
- group
- polyimide
- containing portion
- substrate
- forming
- Prior art date
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- 239000004642 Polyimide Substances 0.000 title claims abstract description 390
- 229920001721 polyimide Polymers 0.000 title claims abstract description 390
- 239000000203 mixture Substances 0.000 title claims abstract description 134
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 78
- 239000000758 substrate Substances 0.000 claims abstract description 259
- 230000009477 glass transition Effects 0.000 claims abstract description 27
- 238000005304 joining Methods 0.000 claims abstract description 18
- 150000001875 compounds Chemical class 0.000 claims description 285
- 238000000034 method Methods 0.000 claims description 132
- 238000010438 heat treatment Methods 0.000 claims description 85
- 239000002243 precursor Substances 0.000 claims description 55
- 239000002904 solvent Substances 0.000 claims description 31
- 239000003112 inhibitor Substances 0.000 claims description 28
- 239000000126 substance Substances 0.000 claims description 25
- 230000005012 migration Effects 0.000 claims description 18
- 238000013508 migration Methods 0.000 claims description 18
- 238000005498 polishing Methods 0.000 claims description 8
- 125000004432 carbon atom Chemical group C* 0.000 description 235
- -1 2- ethyl Chemical group 0.000 description 216
- 239000011342 resin composition Substances 0.000 description 147
- 125000000217 alkyl group Chemical group 0.000 description 99
- 239000010408 film Substances 0.000 description 90
- 229920005989 resin Polymers 0.000 description 85
- 239000011347 resin Substances 0.000 description 85
- 125000003118 aryl group Chemical group 0.000 description 72
- 239000002253 acid Substances 0.000 description 68
- 239000003431 cross linking reagent Substances 0.000 description 62
- 239000000945 filler Substances 0.000 description 57
- 229910052751 metal Inorganic materials 0.000 description 56
- 239000002184 metal Substances 0.000 description 56
- 150000003254 radicals Chemical class 0.000 description 55
- 239000002585 base Substances 0.000 description 47
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 47
- 230000008569 process Effects 0.000 description 47
- 125000002947 alkylene group Chemical group 0.000 description 40
- 239000003999 initiator Substances 0.000 description 40
- 125000001424 substituent group Chemical group 0.000 description 40
- 239000000047 product Substances 0.000 description 39
- 239000010410 layer Substances 0.000 description 38
- 125000001931 aliphatic group Chemical group 0.000 description 37
- 238000011161 development Methods 0.000 description 36
- 239000004065 semiconductor Substances 0.000 description 36
- 239000000463 material Substances 0.000 description 35
- 239000007787 solid Substances 0.000 description 35
- 125000000962 organic group Chemical group 0.000 description 34
- 229920000642 polymer Polymers 0.000 description 34
- 239000002245 particle Substances 0.000 description 32
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 31
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 31
- 239000010949 copper Substances 0.000 description 29
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 29
- 125000004430 oxygen atom Chemical group O* 0.000 description 29
- 229910052802 copper Inorganic materials 0.000 description 28
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 27
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 27
- 230000018109 developmental process Effects 0.000 description 27
- 150000004985 diamines Chemical class 0.000 description 27
- 238000006243 chemical reaction Methods 0.000 description 26
- 229910052731 fluorine Inorganic materials 0.000 description 26
- 239000003960 organic solvent Substances 0.000 description 26
- 125000003545 alkoxy group Chemical group 0.000 description 25
- 125000005843 halogen group Chemical group 0.000 description 25
- 239000007788 liquid Substances 0.000 description 25
- GZVHEAJQGPRDLQ-UHFFFAOYSA-N 6-phenyl-1,3,5-triazine-2,4-diamine Chemical compound NC1=NC(N)=NC(C=2C=CC=CC=2)=N1 GZVHEAJQGPRDLQ-UHFFFAOYSA-N 0.000 description 24
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 description 24
- 125000003342 alkenyl group Chemical group 0.000 description 24
- 239000003505 polymerization initiator Substances 0.000 description 23
- 235000019441 ethanol Nutrition 0.000 description 22
- 125000004122 cyclic group Chemical group 0.000 description 21
- 235000012431 wafers Nutrition 0.000 description 21
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 20
- 239000003963 antioxidant agent Substances 0.000 description 20
- 235000006708 antioxidants Nutrition 0.000 description 20
- 239000003795 chemical substances by application Substances 0.000 description 20
- 125000001153 fluoro group Chemical group F* 0.000 description 20
- 230000001976 improved effect Effects 0.000 description 20
- 239000004094 surface-active agent Substances 0.000 description 20
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 19
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 19
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 19
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 19
- 238000000576 coating method Methods 0.000 description 19
- 125000001046 glycoluril group Chemical class [H]C12N(*)C(=O)N(*)C1([H])N(*)C(=O)N2* 0.000 description 19
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 19
- 125000004849 alkoxymethyl group Chemical group 0.000 description 18
- BGTOWKSIORTVQH-UHFFFAOYSA-N cyclopentanone Chemical compound O=C1CCCC1 BGTOWKSIORTVQH-UHFFFAOYSA-N 0.000 description 18
- 150000002989 phenols Chemical class 0.000 description 18
- 229910052710 silicon Inorganic materials 0.000 description 18
- DQYSALLXMHVJAV-UHFFFAOYSA-M 3-heptyl-2-[(3-heptyl-4-methyl-1,3-thiazol-3-ium-2-yl)methylidene]-4-methyl-1,3-thiazole;iodide Chemical compound [I-].CCCCCCCN1C(C)=CS\C1=C\C1=[N+](CCCCCCC)C(C)=CS1 DQYSALLXMHVJAV-UHFFFAOYSA-M 0.000 description 17
- 125000003277 amino group Chemical group 0.000 description 17
- 239000011248 coating agent Substances 0.000 description 17
- 239000000243 solution Substances 0.000 description 17
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 16
- 230000009471 action Effects 0.000 description 16
- 238000006116 polymerization reaction Methods 0.000 description 16
- 125000003710 aryl alkyl group Chemical group 0.000 description 15
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 15
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 15
- 239000010703 silicon Substances 0.000 description 15
- 239000011135 tin Substances 0.000 description 15
- 229910052719 titanium Inorganic materials 0.000 description 15
- 239000010936 titanium Substances 0.000 description 15
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 14
- IAYPIBMASNFSPL-UHFFFAOYSA-N Ethylene oxide Chemical group C1CO1 IAYPIBMASNFSPL-UHFFFAOYSA-N 0.000 description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 14
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Chemical compound NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 14
- 125000005042 acyloxymethyl group Chemical group 0.000 description 14
- 125000006165 cyclic alkyl group Chemical group 0.000 description 14
- 125000000753 cycloalkyl group Chemical group 0.000 description 14
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 14
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 description 14
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 14
- 229910052718 tin Inorganic materials 0.000 description 14
- 238000001723 curing Methods 0.000 description 13
- 238000001035 drying Methods 0.000 description 13
- 125000001183 hydrocarbyl group Chemical group 0.000 description 13
- 229920001296 polysiloxane Polymers 0.000 description 13
- 229910000679 solder Inorganic materials 0.000 description 13
- FVCSARBUZVPSQF-UHFFFAOYSA-N 5-(2,4-dioxooxolan-3-yl)-7-methyl-3a,4,5,7a-tetrahydro-2-benzofuran-1,3-dione Chemical compound C1C(C(OC2=O)=O)C2C(C)=CC1C1C(=O)COC1=O FVCSARBUZVPSQF-UHFFFAOYSA-N 0.000 description 12
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 12
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 12
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 12
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 12
- 125000004093 cyano group Chemical group *C#N 0.000 description 12
- 229910052757 nitrogen Inorganic materials 0.000 description 12
- 125000006158 tetracarboxylic acid group Chemical group 0.000 description 12
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 11
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 11
- 230000015572 biosynthetic process Effects 0.000 description 11
- NQPJDJVGBDHCAD-UHFFFAOYSA-N 1,3-diazinan-2-one Chemical class OC1=NCCCN1 NQPJDJVGBDHCAD-UHFFFAOYSA-N 0.000 description 10
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 10
- 125000005529 alkyleneoxy group Chemical group 0.000 description 10
- 230000003078 antioxidant effect Effects 0.000 description 10
- 230000000694 effects Effects 0.000 description 10
- 125000003700 epoxy group Chemical group 0.000 description 10
- 239000002516 radical scavenger Substances 0.000 description 10
- 230000035945 sensitivity Effects 0.000 description 10
- 238000003860 storage Methods 0.000 description 10
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 10
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 9
- 239000004593 Epoxy Substances 0.000 description 9
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 9
- 239000002202 Polyethylene glycol Substances 0.000 description 9
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 9
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 9
- 125000005907 alkyl ester group Chemical group 0.000 description 9
- 150000001408 amides Chemical class 0.000 description 9
- 125000004429 atom Chemical group 0.000 description 9
- 235000013877 carbamide Nutrition 0.000 description 9
- 229910052799 carbon Inorganic materials 0.000 description 9
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 9
- 150000005690 diesters Chemical class 0.000 description 9
- 150000002148 esters Chemical class 0.000 description 9
- 125000000623 heterocyclic group Chemical group 0.000 description 9
- YAMHXTCMCPHKLN-UHFFFAOYSA-N imidazolidin-2-one Chemical class O=C1NCCN1 YAMHXTCMCPHKLN-UHFFFAOYSA-N 0.000 description 9
- 229920001223 polyethylene glycol Polymers 0.000 description 9
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 9
- 238000012719 thermal polymerization Methods 0.000 description 9
- PAYRUJLWNCNPSJ-UHFFFAOYSA-N Aniline Chemical compound NC1=CC=CC=C1 PAYRUJLWNCNPSJ-UHFFFAOYSA-N 0.000 description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 8
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical group OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 8
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 8
- 239000006087 Silane Coupling Agent Substances 0.000 description 8
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 8
- 239000006096 absorbing agent Substances 0.000 description 8
- 125000002252 acyl group Chemical group 0.000 description 8
- 229910045601 alloy Inorganic materials 0.000 description 8
- 239000000956 alloy Substances 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 8
- 125000002029 aromatic hydrocarbon group Chemical group 0.000 description 8
- 125000004104 aryloxy group Chemical group 0.000 description 8
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 8
- SBZXBUIDTXKZTM-UHFFFAOYSA-N diglyme Chemical compound COCCOCCOC SBZXBUIDTXKZTM-UHFFFAOYSA-N 0.000 description 8
- 239000011737 fluorine Substances 0.000 description 8
- CATSNJVOTSVZJV-UHFFFAOYSA-N heptan-2-one Chemical compound CCCCCC(C)=O CATSNJVOTSVZJV-UHFFFAOYSA-N 0.000 description 8
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 8
- 229910052759 nickel Inorganic materials 0.000 description 8
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 description 8
- 125000004433 nitrogen atom Chemical group N* 0.000 description 8
- 229920000647 polyepoxide Polymers 0.000 description 8
- 125000006239 protecting group Chemical group 0.000 description 8
- 239000007870 radical polymerization initiator Substances 0.000 description 8
- 239000007921 spray Substances 0.000 description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 8
- TXBCBTDQIULDIA-UHFFFAOYSA-N 2-[[3-hydroxy-2,2-bis(hydroxymethyl)propoxy]methyl]-2-(hydroxymethyl)propane-1,3-diol Chemical compound OCC(CO)(CO)COCC(CO)(CO)CO TXBCBTDQIULDIA-UHFFFAOYSA-N 0.000 description 7
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 7
- 125000004450 alkenylene group Chemical group 0.000 description 7
- DKPFZGUDAPQIHT-UHFFFAOYSA-N butyl acetate Chemical compound CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 7
- 239000004202 carbamide Substances 0.000 description 7
- 239000012986 chain transfer agent Substances 0.000 description 7
- 238000004132 cross linking Methods 0.000 description 7
- 125000004386 diacrylate group Chemical group 0.000 description 7
- 235000014113 dietary fatty acids Nutrition 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 7
- 239000003822 epoxy resin Substances 0.000 description 7
- 229940116333 ethyl lactate Drugs 0.000 description 7
- 229930195729 fatty acid Natural products 0.000 description 7
- 239000000194 fatty acid Substances 0.000 description 7
- 229910052736 halogen Inorganic materials 0.000 description 7
- 125000005647 linker group Chemical group 0.000 description 7
- 150000002739 metals Chemical class 0.000 description 7
- 229910052760 oxygen Inorganic materials 0.000 description 7
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 7
- 239000002994 raw material Substances 0.000 description 7
- 239000011541 reaction mixture Substances 0.000 description 7
- 150000003839 salts Chemical class 0.000 description 7
- 238000003786 synthesis reaction Methods 0.000 description 7
- 150000003512 tertiary amines Chemical class 0.000 description 7
- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical compound C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 description 6
- KBPLFHHGFOOTCA-UHFFFAOYSA-N 1-Octanol Chemical compound CCCCCCCCO KBPLFHHGFOOTCA-UHFFFAOYSA-N 0.000 description 6
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 6
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 6
- XLLIQLLCWZCATF-UHFFFAOYSA-N 2-methoxyethyl acetate Chemical compound COCCOC(C)=O XLLIQLLCWZCATF-UHFFFAOYSA-N 0.000 description 6
- OZJPLYNZGCXSJM-UHFFFAOYSA-N 5-valerolactone Chemical compound O=C1CCCCO1 OZJPLYNZGCXSJM-UHFFFAOYSA-N 0.000 description 6
- HRPVXLWXLXDGHG-UHFFFAOYSA-N Acrylamide Chemical group NC(=O)C=C HRPVXLWXLXDGHG-UHFFFAOYSA-N 0.000 description 6
- 239000004215 Carbon black (E152) Substances 0.000 description 6
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 6
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 6
- WOBHKFSMXKNTIM-UHFFFAOYSA-N Hydroxyethyl methacrylate Chemical compound CC(=C)C(=O)OCCO WOBHKFSMXKNTIM-UHFFFAOYSA-N 0.000 description 6
- FFOPEPMHKILNIT-UHFFFAOYSA-N Isopropyl butyrate Chemical compound CCCC(=O)OC(C)C FFOPEPMHKILNIT-UHFFFAOYSA-N 0.000 description 6
- AMQJEAYHLZJPGS-UHFFFAOYSA-N N-Pentanol Chemical compound CCCCCO AMQJEAYHLZJPGS-UHFFFAOYSA-N 0.000 description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 6
- 125000003647 acryloyl group Chemical group O=C([*])C([H])=C([H])[H] 0.000 description 6
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- 125000000732 arylene group Chemical group 0.000 description 6
- IOJUPLGTWVMSFF-UHFFFAOYSA-N benzothiazole Chemical class C1=CC=C2SC=NC2=C1 IOJUPLGTWVMSFF-UHFFFAOYSA-N 0.000 description 6
- XUPYJHCZDLZNFP-UHFFFAOYSA-N butyl butanoate Chemical compound CCCCOC(=O)CCC XUPYJHCZDLZNFP-UHFFFAOYSA-N 0.000 description 6
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 6
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 6
- 239000007795 chemical reaction product Substances 0.000 description 6
- 238000011156 evaluation Methods 0.000 description 6
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- 230000006870 function Effects 0.000 description 6
- NGAZZOYFWWSOGK-UHFFFAOYSA-N heptan-3-one Chemical compound CCCCC(=O)CC NGAZZOYFWWSOGK-UHFFFAOYSA-N 0.000 description 6
- 229930195733 hydrocarbon Natural products 0.000 description 6
- MLFHJEHSLIIPHL-UHFFFAOYSA-N isoamyl acetate Chemical compound CC(C)CCOC(C)=O MLFHJEHSLIIPHL-UHFFFAOYSA-N 0.000 description 6
- XMGQYMWWDOXHJM-UHFFFAOYSA-N limonene Chemical compound CC(=C)C1CCC(C)=CC1 XMGQYMWWDOXHJM-UHFFFAOYSA-N 0.000 description 6
- 238000005259 measurement Methods 0.000 description 6
- JDSHMPZPIAZGSV-UHFFFAOYSA-N melamine powder Natural products NC1=NC(N)=NC(N)=N1 JDSHMPZPIAZGSV-UHFFFAOYSA-N 0.000 description 6
- VLTRZXGMWDSKGL-UHFFFAOYSA-M perchlorate Chemical compound [O-]Cl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-M 0.000 description 6
- 238000012545 processing Methods 0.000 description 6
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 6
- 150000003609 titanium compounds Chemical class 0.000 description 6
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 6
- CDAWCLOXVUBKRW-UHFFFAOYSA-N 2-aminophenol Chemical compound NC1=CC=CC=C1O CDAWCLOXVUBKRW-UHFFFAOYSA-N 0.000 description 5
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 description 5
- HLBLWEWZXPIGSM-UHFFFAOYSA-N 4-Aminophenyl ether Chemical compound C1=CC(N)=CC=C1OC1=CC=C(N)C=C1 HLBLWEWZXPIGSM-UHFFFAOYSA-N 0.000 description 5
- WTQZSMDDRMKJRI-UHFFFAOYSA-N 4-diazoniophenolate Chemical class [O-]C1=CC=C([N+]#N)C=C1 WTQZSMDDRMKJRI-UHFFFAOYSA-N 0.000 description 5
- QQGYZOYWNCKGEK-UHFFFAOYSA-N 5-[(1,3-dioxo-2-benzofuran-5-yl)oxy]-2-benzofuran-1,3-dione Chemical compound C1=C2C(=O)OC(=O)C2=CC(OC=2C=C3C(=O)OC(C3=CC=2)=O)=C1 QQGYZOYWNCKGEK-UHFFFAOYSA-N 0.000 description 5
- 229910052582 BN Inorganic materials 0.000 description 5
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 5
- QIGBRXMKCJKVMJ-UHFFFAOYSA-N Hydroquinone Chemical compound OC1=CC=C(O)C=C1 QIGBRXMKCJKVMJ-UHFFFAOYSA-N 0.000 description 5
- 229920000877 Melamine resin Polymers 0.000 description 5
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- 125000005409 triarylsulfonium group Chemical group 0.000 description 1
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Images
Classifications
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
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- C08L79/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
- C08L79/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
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- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
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- H01L2224/8303—Reshaping the layer connector in the bonding apparatus, e.g. flattening the layer connector
- H01L2224/83031—Reshaping the layer connector in the bonding apparatus, e.g. flattening the layer connector by chemical means, e.g. etching, anodisation
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- H01L2224/83047—Reshaping the layer connector in the bonding apparatus, e.g. flattening the layer connector by mechanical means, e.g. severing, pressing, stamping
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- H01L2224/83894—Direct bonding, i.e. joining surfaces by means of intermolecular attracting interactions at their interfaces, e.g. covalent bonds, van der Waals forces
- H01L2224/83895—Direct bonding, i.e. joining surfaces by means of intermolecular attracting interactions at their interfaces, e.g. covalent bonds, van der Waals forces between electrically conductive surfaces, e.g. copper-copper direct bonding, surface activated bonding
Definitions
- the present invention relates to a composition for forming a polyimide-containing part, a method for producing a joined body, a method for producing a joined body, a device, and a device.
- Electronic devices such as mobile phones and tablet terminals are getting smaller and smaller, while their functions are diversifying. To meet these needs, electronic circuits incorporated in electronic devices are required to be further miniaturized, highly integrated, and mounted at high density.
- Packaging technologies such as SIP (System in Package), MCM (Multi Chip Module), and POP (Package on Package) are attracting attention as technologies that achieve miniaturization while maintaining high performance and reliability with multiple functions. . Since these techniques can reduce the number of parts and simplify the semiconductor manufacturing process, they are also expected to reduce the cost of electronic devices.
- FIG. 1 is a cross-sectional view showing the structure of a typical COC.
- the COC in this example comprises a daughter chip (first substrate) 1 and a mother chip (second substrate) 2 .
- An electronic circuit (not shown) and flip chip electrodes (not shown) are formed on the mother chip 2 , and the daughter chip 1 is supported and connected via solder electrodes (bumps) 93 .
- the periphery of the solder electrode 93 is filled with an underfill 94 to ensure insulation.
- the mother chip 2 is mounted on the base substrate 98 while maintaining insulation by being adhered to the base substrate 98 by the bonding film 91 .
- the electrical connection is made through wire bonding pad 97b, wire bonding 96 and substrate electrode 97a.
- Such a COC structure is sealed with a sealing resin 95 to form a semiconductor device 90 .
- the semiconductor device 90 is provided with solder balls 99, through which it is incorporated into electronic equipment. Further, by further applying this flip-chip mounting technique, techniques and materials for three-dimensional mounting using TSV (Through Silicon Via) are being studied (Non-Patent Document 1).
- the underfill 94 is filled in the gap. Therefore, a fluid resin is used as the material forming the underfill, and the resin is cured and molded after being filled between the solder bumps.
- the daughter chip 1 and the mother chip 2 are bonded together by the adhesive strength of the resin, and from the viewpoint of improving the adhesiveness, it is desired to improve the maximum peeling resistance between these two substrates.
- the present invention provides a composition for forming a polyimide-containing portion that can provide a bonded body having a large maximum peeling force between two substrates when bonding two substrates, and bonding using the composition for forming a polyimide-containing portion.
- An object of the present invention is to provide a method for manufacturing a body, a bonded body obtained by the manufacturing method, a method for manufacturing a device including the method for manufacturing the bonded body, and a device including the bonded body.
- the polyimide-containing portion is a member formed from the polyimide-containing portion-forming composition, A composition for forming a polyimide-containing portion, wherein the glass transition temperature of the polyimide-containing portion is lower than the bonding temperature in the bonding step.
- composition for forming a polyimide-containing part according to ⁇ 1> containing a polyimide precursor and a solvent.
- composition for forming a polyimide-containing part according to ⁇ 1> or ⁇ 2> further comprising a migration inhibitor.
- ⁇ 4> The composition for forming a polyimide-containing portion according to any one of ⁇ 1> to ⁇ 3>, wherein the polyimide-containing portion has a glass transition temperature of 350° C. or lower.
- ⁇ 5> The composition for forming a polyimide-containing part according to any one of ⁇ 1> to ⁇ 4>, wherein the glass transition temperature of the polyimide-containing part is lower than the bonding temperature in the bonding step by 30° C.
- ⁇ 6> The composition for forming a polyimide-containing portion according to any one of ⁇ 1> to ⁇ 5>, wherein the bonding temperature in the bonding step is 380° C. or less.
- ⁇ 7> The composition for forming a polyimide-containing portion according to any one of ⁇ 1> to ⁇ 6>, wherein the substrate A is in the form of a wafer.
- ⁇ 8> The composition for forming a polyimide-containing part according to any one of ⁇ 1> to ⁇ 7>, wherein the form of the substrate B is a chip.
- ⁇ 12> The composition for forming a polyimide-containing portion according to ⁇ 11>, wherein the planarization step is performed by physical polishing.
- ⁇ 13> The composition for forming a polyimide-containing portion according to ⁇ 11>, wherein the planarization step is performed by chemical polishing.
- the bonding step the electrodes included in the surface of the substrate A having the polyimide-containing portion and the electrodes on the surface of the substrate B including the wiring terminals are bonded so as to be in direct contact with each other, ⁇ 1> to The composition for forming a polyimide-containing portion according to any one of ⁇ 13>.
- ⁇ 15> ⁇ 1> to ⁇ 14> further including a second polyimide-containing portion forming step of forming a second polyimide-containing portion on the surface of the substrate B provided with the wiring terminals before the bonding step.
- the composition for forming a polyimide-containing portion according to any one of . ⁇ 16> The composition for forming a polyimide-containing portion according to any one of ⁇ 1> to ⁇ 15>, further comprising a photosensitive compound.
- the polyimide-containing portion forming step includes applying a composition for forming a polyimide-containing portion onto the surface of the substrate A provided with the wiring terminal and heating the composition.
- composition for forming a polyimide-containing portion according to 1.
- ⁇ 20> A joined body obtained by the production method according to ⁇ 19>.
- ⁇ 21> A method of manufacturing a device, including the method of manufacturing a joined body according to ⁇ 19>.
- ⁇ 22> A device comprising the conjugate according to ⁇ 20>.
- a composition for forming a polyimide-containing part that can obtain a bonded body having a large maximum peeling force between two substrates when bonding two substrates, and the composition for forming a polyimide-containing part are used.
- a method for manufacturing a bonded body, a bonded body obtained by the manufacturing method a method for manufacturing a device including the method for manufacturing the bonded body, and a device including the bonded body.
- FIG. 1 is a cross-sectional view schematically showing the structure of a COC semiconductor device
- FIG. BRIEF DESCRIPTION OF THE DRAWINGS It is process explanatory drawing which showed the process when joining a board
- FIG. 2 is a process explanatory diagram showing a schematic cross-sectional view of a process of bonding substrates in a method for manufacturing a bonded body using the composition for forming a polyimide-containing portion of the present invention according to one embodiment of the present invention (FIG. 2 continuation).
- FIG. 2 is a process explanatory diagram showing a schematic cross-sectional view of a process of bonding substrates in a method for manufacturing a bonded body using the composition for forming a polyimide-containing portion of the present invention according to one embodiment of the present invention (FIG. 2
- FIG. 2 is a process explanatory diagram showing a schematic cross-sectional view of a process of bonding substrates in a method for manufacturing a bonded body using the composition for forming a polyimide-containing portion of the present invention according to one embodiment of the present invention (FIG. 3 continued).
- 1 is a cross-sectional view schematically showing an example of a three-dimensionally mounted semiconductor device using TSVs;
- FIG. It is a schematic cross-sectional view showing details of a substrate used in Examples.
- an "alkyl group” includes not only an alkyl group having no substituent (unsubstituted alkyl group) but also an alkyl group having a substituent (substituted alkyl group).
- the term "exposure” includes not only exposure using light but also drawing using particle beams such as electron beams and ion beams, unless otherwise specified.
- the light used for exposure generally includes actinic rays or radiation such as emission line spectra of mercury lamps, far ultraviolet rays represented by excimer lasers, extreme ultraviolet rays (EUV light), X-rays and electron beams.
- EUV light extreme ultraviolet rays
- a numerical range represented by "to” means a range including the numerical values before and after "to” as lower and upper limits.
- (meth)acrylate represents both or either of “acrylate” and “methacrylate”
- (meth)acrylic represents both “acrylic” and “methacrylic", or Either is represented
- (meth)acryloyl represents both or either of “acryloyl” and “methacryloyl”.
- process includes not only an independent process, but also when the intended action of the process is achieved even if it cannot be clearly distinguished from other processes.
- the solid content is the mass percentage of other components excluding the solvent relative to the total mass of the composition. Further, the solid content concentration refers to the concentration at 25° C. unless otherwise specified. The temperature in the present invention is 25° C.
- weight average molecular weight (Mw) and number average molecular weight (Mn) are defined as polystyrene equivalent values according to gel permeation chromatography (GPC measurement), unless otherwise specified.
- the weight average molecular weight (Mw) and number average molecular weight (Mn) are, for example, HLC-8220 (manufactured by Tosoh Corporation), guard column HZ-L, TSKgel Super HZM-M, TSKgel It can be obtained by using either Super HZ4000, TSKgel Super HZ3000, or TSKgel Super HZ2000 (manufactured by Tosoh Corporation).
- THF tetrahydrofuran
- a UV ray (ultraviolet) wavelength detector of 254 nm is used for detection.
- composition for forming polyimide-containing part of the present invention includes: a step of preparing a substrate A having a surface provided with wiring terminals; a step of forming a polyimide-containing portion on the surface of the substrate A provided with the wiring terminals; A joined body comprising: a step of preparing a substrate B having a surface provided with wiring terminals; A composition for forming a polyimide-containing part used in the manufacturing method, wherein the polyimide-containing part is a member formed from the composition for forming a polyimide-containing part, and the glass transition temperature of the polyimide-containing part is the above bonding Lower than the bonding temperature in the process.
- the composition for forming a polyimide-containing part of the present invention (hereinafter also simply referred to as "resin composition"), when bonding two substrates such as a wafer and a wafer or a wafer and a chip through the polyimide-containing part , it is possible to produce a bonded body with a high maximum peel force between the two substrates.
- the glass transition temperature (Tg) of the polyimide-containing portion is lower than the bonding temperature, it is possible to ensure sufficient fluidity of the polyimide-containing portion during bonding. It is possible to increase the maximum peel resistance.
- the bonding temperature is the temperature of the polyimide-containing portion during bonding, and can be, for example, the set temperature of the device used for bonding.
- the bonding time can be shortened, and the tact time of the bonding process can also be reduced.
- the alignment accuracy at the time of joining is low, and the joining gap between the metal parts such as electrodes on each substrate occurs, and the wiring part is exposed. may occur.
- the polyimide-containing portion between the wiring portions is required to have withstand voltage performance.
- the composition for forming the polyimide-containing portion contains a migration inhibitor, it is possible to suppress the migration of the metal from the metal portion to the polyimide-containing portion, thereby improving the withstand voltage performance. It is considered possible. Details of the resin composition of the present invention are described below.
- a method for producing a bonded body using the composition for forming a polyimide-containing portion of the present invention includes a step of preparing a substrate A having a surface provided with wiring terminals.
- the substrate A may be manufactured by a known method (for example, plating on a substrate such as a silicon substrate), or may be obtained by means such as purchase.
- the substrate A has a surface with wiring terminals.
- the wiring terminals on the substrate A are also referred to as wiring terminals A hereinafter.
- the form of the substrate A may be either a wafer or a chip, but being a wafer is also one of the preferred aspects of the present invention.
- a wafer means a substrate containing a semiconductor, and is a concept including a panel or the like formed of a plurality of elements such as semiconductors.
- a chip means an individual piece containing a semiconductor formed by dicing or the like, and may be a single-sided chip or a double-sided chip.
- the shape of the substrate A is not particularly limited, but examples thereof include a polygonal plate shape, a disc shape, and a polyhedron shape.
- the thickness of the substrate A is preferably 0.1-5 mm, more preferably 0.2-1 mm.
- the wiring terminal A on the substrate A is preferably a pillar electrode.
- the wiring terminal A preferably contains a metal such as tin (Sn), gold (Au), silver (Ag), copper (Cu), aluminum (Al), tungsten (W), palladium (Pd), Platinum (Pt), Cobalt (Co), Nickel (Ni), Zinc (Zn), Ruthenium (Ru), Iridium (Ir), Rhodium (Rh), Lead (Pb), Bismuth (Bi) and Indium (In) More preferably, it contains at least one metal selected from the group consisting of, more preferably at least one metal selected from the group consisting of copper, tin and nickel.
- a metal such as tin (Sn), gold (Au), silver (Ag), copper (Cu), aluminum (Al), tungsten (W), palladium (Pd), Platinum (Pt), Cobalt (Co), Nickel (Ni), Zinc (Zn), Ruthenium (Ru), Iridium (Ir), Rhodium (Rh), Lead (Pb), Bismuth (Bi) and Indium
- the alloy may contain elements other than those exemplified above.
- a copper alloy may contain silicon atoms to form a Corson alloy.
- oxygen that is inevitably dissolved, organic residues of the raw material compound mixed during precipitation, and the like may be present.
- the wiring terminal A may be a wiring terminal comprising a plurality of different members.
- a substrate has a portion that is used as an electrode (hereinafter also referred to as an “electrode”) made of a metal such as copper, silver, gold, or an alloy containing one or more of these, and on the electrode such as copper , nickel, tin, lead, or an alloy containing one or more of these metals (hereinafter also referred to as a “conducting path”) that is used as solder is formed, and the electrode and the conducting path are formed.
- One wiring terminal A may be formed by existing in series. Among these, the wiring terminal A preferably includes at least a member containing copper and a member containing tin.
- An example of the substrate A having a surface provided with such wiring terminals A is the substrate b) used in the examples of the present application. In substrate b), conductive paths made of tin are formed on electrodes made of copper.
- the electrodes are not particularly limited, but include tin, gold, silver, copper, aluminum, tungsten, palladium, platinum, cobalt, nickel, zinc, ruthenium, iridium, rhodium, and alloys thereof.
- the electrode is preferably a metal containing copper, a metal containing aluminum, a metal containing tungsten, a metal containing nickel, or a metal containing gold, more preferably a metal containing copper, and still more preferably copper.
- the metal used for the electrodes it is preferable to use a metal that does not melt even in the joining process.
- the melting point of the metal used for the electrodes is preferably 500° C. or higher, more preferably 700° C.
- the material used for the conductive path is not particularly limited, but includes tin, lead, silver, copper, zinc, bismuth, or indium, or alloys thereof. Among them, solder of tin or a tin alloy (a metal containing tin) is preferable in the present invention. Recently, the technology of lead-free solder, which does not use lead, is also progressing, and it is also preferable to select such a material.
- the metal used for the conducting path a metal that melts in the joining process is preferable.
- the melting point of the metal used for the conducting paths is preferably 400° C.
- the lower limit of the melting point is not particularly limited as long as it is solid at room temperature. Moreover, it is preferable that a plurality of wiring terminals A are formed on the substrate A. As shown in FIG.
- the material used for the substrate A is not particularly limited, and includes semiconductor fabrication substrates such as silicon, silicon nitride, polysilicon, silicon oxide, and amorphous silicon, quartz, glass, optical films, ceramic materials, deposited films, magnetic films, reflective films, Metal substrates such as Ni, Cu, Cr, and Fe, paper, SOG (Spin On Glass), TFT (Thin Film Transistor) array substrates, plasma display panel (PDP) electrode plates, etc. are not particularly limited.
- the substrate may be provided with a layer such as an adhesion layer or an oxide layer made of hexamethyldisilazane (HMDS) or the like on the surface.
- HMDS hexamethyldisilazane
- a semiconductor fabrication substrate is particularly preferred, and a silicon substrate (silicon wafer) is more preferred.
- Substrate A may have an electronic circuit area containing electronic circuits. Moreover, the electronic circuit may have an element such as a semiconductor. Moreover, it is preferable that the electronic circuit is electrically connected to the wiring terminal A.
- the diameter can be 100 mm or more. Moreover, as a large substrate, for example, it is preferably 200 mm or more, and more preferably 250 mm or more. Although there is no particular upper limit, it is preferably 2,000 mm or less.
- the diameter is preferably 7 mm or more, more preferably 10 mm or more, and even more preferably 20 mm or more.
- the upper limit is, for example, preferably 50 mm or less, more preferably 40 mm or less, and even more preferably 30 mm or less.
- a method for producing a bonded body using the composition for forming a polyimide-containing portion of the present invention includes a polyimide-containing portion forming step of forming a polyimide-containing portion on the surface of the substrate A provided with the wiring terminal (wiring terminal A). .
- the polyimide-containing portion is preferably formed so as to be in contact with the wiring terminal A, and more preferably formed so as to fill the concave portion between the wiring terminals A.
- the polyimide-containing portion may be formed on at least a part of the wiring terminals A, but for example, an embodiment in which the polyimide-containing portion is formed on all of the wiring terminals A is also one of the preferred embodiments of the present invention.
- the polyimide-containing portion forming step preferably includes applying a composition for forming a polyimide-containing portion onto the surface of the substrate A provided with the wiring terminals and heating. Application and heating details are described below.
- the polyimide-containing portion is a member formed from the polyimide-containing portion-forming composition, and is preferably a member obtained by at least heating the polyimide-containing portion-forming composition.
- the polyimide-containing portion is a member containing polyimide, and may further contain components other than polyimide.
- components other than polyimide include components other than polyimide and its precursor contained in the resin composition described later, and components modified by heating (decomposition, polymerization, structural change, etc.).
- the glass transition temperature of the polyimide-containing portion may be lower than the bonding temperature in the bonding step, but is preferably 350° C. or lower, more preferably 320° C. or lower, and even more preferably 300° C. or lower.
- the lower limit of the glass transition temperature is not particularly limited, it is preferably 200° C. or higher from the viewpoint of heat resistance.
- the glass transition temperature of the polyimide-containing portion is preferably 30 ° C. or more lower than the bonding temperature in the bonding step, more preferably 50 ° C. or more, and further preferably 70 ° C. or more. preferable.
- the glass transition temperature of the polyimide-containing portion is preferably 30° C. or more higher than the bonding temperature in the bonding step.
- the thickness of the polyimide-containing portion is not particularly limited, but from the viewpoint of exhibiting the effect of its physical properties, the thickness immediately before the bonding step (when the planarization step described later is performed, the state immediately before the planarization step is performed) thickness) is preferably 100 nm or more, more preferably 300 nm or more, still more preferably 500 nm or more, still more preferably 1 ⁇ m or more, and even more preferably 2 ⁇ m or more. Although there is no particular upper limit, it is preferably 1 mm or less, more preferably 500 ⁇ m or less, and even more preferably 200 ⁇ m or less.
- the thickness of the film can be measured using a known film thickness measuring device.
- the thermal diffusivity of the polyimide-containing portion in the joined body described later is preferably 2.0 ⁇ 10 ⁇ 7 m 2 s ⁇ 1 or more, and more preferably 3.0 ⁇ 10 ⁇ 7 m 2 s ⁇ 1 or more. More preferably, it is 5.0 ⁇ 10 ⁇ 7 m 2 s ⁇ 1 or more.
- the thermal diffusivity of the polyimide-containing part is, for example, when the polyimide-containing part contains a filler, the material type of the filler, the particle size of the filler (a combination of the particle sizes when two or more types of filler are included), and the thermal diffusion of the filler. It can be adjusted by designing factors such as the rate, content of filler, structure of polyimide, thermal diffusivity of polyimide, content of polyimide, and the like.
- the polyimide-containing portion is preferably an insulating member.
- the insulation (electrical resistance) of the polyimide-containing portion is not particularly limited, but the volume resistivity is preferably 1 ⁇ 10 15 ⁇ cm or more, more preferably 1 ⁇ 10 16 ⁇ cm or more. Although there is no particular upper limit, it is practical to be 1 ⁇ 10 19 ⁇ cm or less.
- the dielectric breakdown voltage is preferably 1 kV/mm or more, more preferably 10 kV/mm or more. Although the upper limit is not particularly limited, it is practically 1000 kV/mm or less. In this specification, measurements of volume resistivity and dielectric breakdown voltage shall comply with JIS C2151:2006 and JIS C2318:2007.
- the polyimide-containing portion forming step is a step including applying the polyimide-containing portion forming composition (resin composition) of the present invention onto the surface of the substrate A having the wiring terminal A (application step). is preferred.
- Means for applying the resin composition onto the substrate A include dip coating, air knife coating, curtain coating, wire bar coating, gravure coating, extrusion coating, spray coating, spin coating, A slit coat method, an inkjet method, and the like are exemplified. From the viewpoint of uniformity of film thickness, spin coating, slit coating, spray coating, or inkjet method is more preferable, and spin coating from the viewpoint of uniformity of film thickness and productivity. and slit coating methods are preferred. A film having a desired thickness can be obtained by adjusting the solid content concentration and application conditions of the resin composition according to the method. In addition, the coating method can be appropriately selected depending on the shape of the substrate. Spin coating, spray coating, inkjet method, etc.
- slit coating and spray coating are preferable for rectangular substrates.
- method, inkjet method, and the like are preferred.
- the spin coating method for example, it can be applied at a rotation speed of 500 to 3,500 rpm for about 10 seconds to 3 minutes.
- a method of transferring a coating film, which is formed on a temporary support in advance by the application method described above, onto a base material can be applied.
- the transfer method the manufacturing methods described in paragraphs 0023 and 0036 to 0051 of JP-A-2006-023696 and paragraphs 0096-0108 of JP-A-2006-047592 can also be preferably used in the present invention.
- a step of removing excess film at the edge of the substrate may be performed.
- processes include edge bead rinsing (EBR), back rinsing, and the like.
- EBR edge bead rinsing
- a pre-wetting step may also be employed in which the substrate is coated with various solvents before applying the resin composition to the substrate to improve the wettability of the substrate, and then the resin composition is applied.
- a step (drying step) of drying the member (hereinafter also simply referred to as "film") made of the resin composition is performed.
- the drying temperature in the drying step is preferably 50 to 150°C, more preferably 70 to 130°C, even more preferably 90 to 110°C.
- the drying time is exemplified from 30 seconds to 20 minutes, preferably from 1 minute to 10 minutes, more preferably from 2 minutes to 7 minutes.
- the thickness immediately after application (the thickness after drying when a drying step is performed) is not particularly limited, and may be adjusted as appropriate so that the thickness of the resulting polyimide-containing portion will be the thickness described later.
- the polyimide-containing portion forming step may include a step of patterning the member made of the resin composition.
- a resin composition containing a photosensitive compound such as a photopolymerization initiator, which will be described later, is used, this patterning can be performed by exposure and development.
- the surface After forming the polyimide-containing portion, the surface may be planarized. Details of the planarization will be described later. Note that when patterning is performed, the thickness of the portion removed by development or the like is not used for calculating the film thickness difference (T1-T2) described later.
- the film may be subjected to an exposure step that selectively exposes the film. That is, it is also referred to as a polyimide-containing portion (hereinafter, “cured product”) related to the composition for forming a polyimide-containing portion of the present invention. ) may include an exposure step of selectively exposing the film formed by the applying step. Selectively exposing means exposing a portion of the film. Also, by selectively exposing, the film is formed with exposed regions (exposed portions) and non-exposed regions (non-exposed portions). The amount of exposure is not particularly defined as long as the resin composition of the present invention can be cured . is more preferred.
- the exposure wavelength can be appropriately determined in the range of 190-1,000 nm, preferably 240-550 nm.
- the exposure wavelength is (1) semiconductor laser (wavelength 830 nm, 532 nm, 488 nm, 405 nm, 375 nm, 355 nm etc.), (2) metal halide lamp, (3) high pressure mercury lamp, g-line (wavelength 436 nm), h-line (wavelength 405 nm), i-line (wavelength 365 nm), broad (three wavelengths of g, h, i-line), (4) excimer laser, KrF excimer laser (wavelength 248 nm), ArF excimer laser (wavelength 193 nm) ), F2 excimer laser ( wavelength 157 nm), (5) extreme ultraviolet; EUV (wavelength 13.6 nm), (6) electron beam, (7) YAG laser second harmonic 532 nm, third harmonic 355 nm, etc.
- semiconductor laser wavelength 830 nm, 532 nm, 488 nm, 405 nm, 375 nm, 355
- the resin composition of the present invention exposure with a high-pressure mercury lamp is particularly preferred, and exposure with i-line is particularly preferred. Thereby, particularly high exposure sensitivity can be obtained.
- the method of exposure is not particularly limited as long as at least a part of the film made of the resin composition of the present invention is exposed. Exposure using a photomask, exposure by a laser direct imaging method, etc. mentioned.
- the film may be subjected to a step of heating after exposure (post-exposure heating step). That is, the method for producing a cured product of the composition for forming a polyimide-containing portion of the present invention may include a post-exposure heating step of heating the film exposed in the exposure step.
- the post-exposure heating step can be performed after the exposure step and before the development step.
- the heating temperature in the post-exposure heating step is preferably 50°C to 140°C, more preferably 60°C to 120°C.
- the heating time in the post-exposure heating step is preferably 30 seconds to 300 minutes, more preferably 1 minute to 10 minutes.
- the heating rate in the post-exposure heating step is preferably 1 to 12° C./min, more preferably 2 to 10° C./min, still more preferably 3 to 10° C./min, from the temperature at the start of heating to the maximum heating temperature. Also, the rate of temperature increase may be appropriately changed during heating.
- the heating means in the post-exposure heating step is not particularly limited, and known hot plates, ovens, infrared heaters and the like can be used. Moreover, it is also preferable to carry out the heating in an atmosphere of low oxygen concentration by, for example, flowing an inert gas such as nitrogen, helium or argon.
- the film after exposure may be subjected to a development step in which the film is developed using a developer to form a pattern.
- the method for producing a cured product of the composition for forming a polyimide-containing portion of the present invention may include a development step of developing a film exposed in the exposure step with a developer to form a pattern. By performing development, one of the exposed and non-exposed portions of the film is removed to form a pattern.
- development in which the unexposed portion of the film is removed by the development process is called negative development
- development in which the exposed portion of the film is removed by the development process is called positive development.
- Examples of the developer used in the development process include an aqueous alkaline solution and a developer containing an organic solvent.
- basic compounds that the alkaline aqueous solution may contain include inorganic alkalis, primary amines, secondary amines, tertiary amines, and quaternary ammonium salts.
- TMAH tetramethylammonium hydroxide
- potassium hydroxide sodium carbonate, sodium hydroxide, sodium silicate, sodium metasilicate, ammonia, ethylamine, n-propylamine, diethylamine, di-n-butylamine, triethylamine, methyldiethylamine , dimethylethanolamine, triethanolamine, tetraethylammonium hydroxide, tetrapropylammonium hydroxide, tetrabutylammonium hydroxide, tetrapentylammonium hydroxide, tetrahexylammonium hydroxide, tetraoctylammonium hydroxide, ethyltrimethylammonium hydroxide , butyltrimethylammonium hydroxide, methyltriamylammonium hydroxide, dibutyldipentylammonium hydroxide, dimethylbis(2-hydroxyethyl)am
- the content of the basic compound in the developer is preferably 0.01 to 10% by mass, more preferably 0.1 to 5% by mass, more preferably 0.3 to 3% by mass, based on the total mass of the developer. is more preferred.
- the organic solvent may be an ester such as ethyl acetate, n-butyl acetate, amyl formate, isoamyl acetate, isobutyl acetate, butyl propionate, isopropyl butyrate, ethyl butyrate, butyl butyrate, Methyl lactate, ethyl lactate, ⁇ -butyrolactone, ⁇ -caprolactone, ⁇ -valerolactone, alkyl alkyloxyacetate (e.g. methyl alkyloxyacetate, ethyl alkyloxyacetate, butyl alkyloxyacetate (e.g.
- 3-alkyloxypropionate alkyl esters e.g., methyl 3-alkyloxypropionate, ethyl 3-alkyloxypropionate, etc. (e.g., 3-methoxy methyl propionate, ethyl 3-methoxypropionate, methyl 3-ethoxypropionate, ethyl 3-ethoxypropionate, etc.
- 2-alkyloxypropionate alkyl esters e.g.
- methyl 2-alkyloxypropionate, 2- ethyl alkyloxypropionate, propyl 2-alkyloxypropionate, etc. e.g., methyl 2-methoxypropionate, ethyl 2-methoxypropionate, propyl 2-methoxypropionate, methyl 2-ethoxypropionate, 2-ethoxypropionic acid ethyl
- methyl 2-alkyloxy-2-methylpropionate and ethyl 2-alkyloxy-2-methylpropionate e.g.
- ethers such as diethylene glycol dimethyl ether, tetrahydrofuran, Ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, methyl cellosolve acetate, ethyl cellosolve acetate, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monobutyl ether, propylene glycol monomethyl ether (PGME), propylene glycol monomethyl ether acetate (PGMEA), propylene Glycol monoethyl ether acetate
- the organic solvent can be used singly or in combination of two or more.
- a developer containing at least one selected from the group consisting of cyclopentanone, ⁇ -butyrolactone, dimethylsulfoxide, N-methyl-2-pyrrolidone, and cyclohexanone is particularly preferred, and cyclopentanone and ⁇ -butyrolactone. and dimethylsulfoxide is more preferred, and a developer containing cyclopentanone is most preferred.
- the content of the organic solvent relative to the total weight of the developer is preferably 50% by mass or more, more preferably 70% by mass or more, and 80% by mass or more. is more preferable, and 90% by mass or more is particularly preferable. Moreover, the content may be 100% by mass.
- the developer may further contain other components.
- Other components include, for example, known surfactants and known antifoaming agents.
- the method of supplying the developer is not particularly limited as long as the desired pattern can be formed, and a method of immersing the substrate on which the film is formed in the developer, and supplying the developer to the film formed on the substrate using a nozzle.
- the type of nozzle is not particularly limited, and straight nozzles, shower nozzles, spray nozzles and the like can be mentioned. From the viewpoint of permeability of the developer, removability of the non-image area, and efficiency in production, a method of supplying the developer with a straight nozzle or a method of continuously supplying the developer with a spray nozzle is preferable.
- the method of supplying with a spray nozzle is more preferable.
- the substrate is spun to remove the developer from the substrate.
- a step of removing from above may be employed, and this step may be repeated multiple times.
- the method of supplying the developer in the development process includes a process in which the developer is continuously supplied to the base material, a process in which the developer is kept substantially stationary on the base material, and a process in which the developer exceeds the developer on the base material.
- a process of vibrating with sound waves or the like and a process of combining them can be employed.
- the development time is preferably 10 seconds to 10 minutes, more preferably 20 seconds to 5 minutes.
- the temperature of the developer during development is not particularly limited, but is preferably 10 to 45°C, more preferably 18 to 30°C.
- the pattern may be washed (rinsed) with a rinse.
- a method of supplying the rinse liquid before the developer in contact with the pattern is completely dried may be adopted.
- Rinse liquid When the developer is an alkaline aqueous solution, water, for example, can be used as the rinse.
- the developer is a developer containing an organic solvent, for example, a solvent different from the solvent contained in the developer (for example, water, an organic solvent different from the organic solvent contained in the developer) is used as the rinse liquid. be able to.
- the organic solvent includes esters such as ethyl acetate, n-butyl acetate, amyl formate, isoamyl acetate, isobutyl acetate, butyl propionate, isopropyl butyrate, ethyl butyrate, and butyl butyrate. , methyl lactate, ethyl lactate, ⁇ -butyrolactone, ⁇ -caprolactone, ⁇ -valerolactone, alkyl alkyloxyacetates (e.g. methyl alkyloxyacetate, ethyl alkyloxyacetate, butyl alkyloxyacetate (e.g.
- 3-alkyloxypropionate alkyl esters e.g., methyl 3-alkyloxypropionate, ethyl 3-alkyloxypropionate, etc. (e.g., 3- methyl methoxypropionate, ethyl 3-methoxypropionate, methyl 3-ethoxypropionate, ethyl 3-ethoxypropionate, etc.
- 2-alkyloxypropionate alkyl esters e.g.
- methyl 2-alkyloxypropionate 2 -ethyl alkyloxypropionate, propyl 2-alkyloxypropionate, etc. (e.g., methyl 2-methoxypropionate, ethyl 2-methoxypropionate, propyl 2-methoxypropionate, methyl 2-ethoxypropionate, 2-ethoxypropionate ethyl acid)), methyl 2-alkyloxy-2-methylpropionate and ethyl 2-alkyloxy-2-methylpropionate (e.g.
- ethers such as diethylene glycol dimethyl ether, tetrahydrofuran , ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, methyl cellosolve acetate, ethyl cellosolve acetate, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monobutyl ether, propylene glycol monomethyl ether (PGME), propylene glycol monomethyl ether acetate (PGMEA), Propylene glycol monoethyl ether a
- the organic solvent can be used singly or in combination of two or more.
- the organic solvent can be used singly or in combination of two or more.
- cyclopentanone, ⁇ -butyrolactone, dimethylsulfoxide, N-methylpyrrolidone, cyclohexanone, PGMEA and PGME are particularly preferred, cyclopentanone, ⁇ -butyrolactone, dimethylsulfoxide, PGMEA and PGME are more preferred, and cyclohexanone and PGMEA are more preferred. More preferred.
- the rinse liquid contains an organic solvent
- the rinse liquid is preferably 50% by mass or more of the organic solvent, more preferably 70% by mass or more of the organic solvent, and 90% by mass or more of the organic solvent. is more preferred. Further, 100% by mass of the rinse liquid may be an organic solvent.
- the rinse solution may further contain other components.
- Other components include, for example, known surfactants and known antifoaming agents.
- the method of supplying the rinse solution is not particularly limited as long as the desired pattern can be formed, and includes a method of immersing the base material in the rinse solution, a method of supplying the rinse solution to the base material by piling up the base material, and a method of supplying the rinse solution to the base material by showering. and a method of continuously supplying the rinsing liquid onto the substrate by means of a straight nozzle or the like.
- the permeability of the rinse liquid From the viewpoint of the permeability of the rinse liquid, the removability of the non-image areas, and the efficiency in manufacturing, there are methods of supplying the rinse liquid using a shower nozzle, a straight nozzle, a spray nozzle, etc., and a continuous supply method using a spray nozzle is preferable. From the viewpoint of the permeability of the rinsing liquid to the image area, the method of supplying the rinsing liquid with a spray nozzle is more preferable.
- the type of nozzle is not particularly limited, and straight nozzles, shower nozzles, spray nozzles and the like can be mentioned.
- the rinsing step is preferably a step of supplying the rinse liquid to the film after exposure through a straight nozzle or a step of continuously supplying the same, and more preferably a step of supplying the rinse liquid through a spray nozzle.
- the method of supplying the rinse liquid in the rinse step includes a process in which the rinse liquid is continuously supplied to the base material, a process in which the rinse liquid is kept substantially stationary on the base material, and a process in which the rinse liquid is kept on the base material in a substantially stationary state. A process of vibrating with sound waves or the like and a process of combining them can be adopted.
- the rinse time is preferably 10 seconds to 10 minutes, more preferably 20 seconds to 5 minutes.
- the temperature of the rinsing liquid during rinsing is not particularly specified, but is preferably 10 to 45°C, more preferably 18 to 30°C.
- the pattern obtained by the developing step (the pattern after rinsing when the rinsing step is performed) is preferably subjected to a heating step of heating the pattern obtained by the above developing (the member made of the resin composition). That is, the method for producing a cured product of the composition for forming a polyimide-containing portion of the present invention may include a heating step of heating the pattern obtained by the developing step. Further, the method for producing a cured product according to the composition for forming a polyimide-containing portion of the present invention includes a pattern obtained by another method without performing the developing step, or a heating step of heating the film obtained by the applying step It is also preferable to include a heating step of heating the film obtained by the applying step without performing the developing step.
- a resin such as a polyimide precursor is cyclized into a resin such as polyimide.
- cross-linking of unreacted cross-linkable groups in the specific resin or a cross-linking agent other than the specific resin also progresses.
- the heating temperature (maximum heating temperature) in the heating step is preferably 375° C. or lower, more preferably 350° C. or lower, even more preferably 300° C. or lower, and may be 250° C. or lower.
- the lower limit of the heating temperature is preferably 160° C. or higher, more preferably 170° C. or higher, and even more preferably 180° C. or higher.
- heating conditions such as heating temperature and heating time in the heating step
- the heating step is preferably a step of promoting the cyclization reaction of the polyimide precursor in the pattern by the action of the base generated from the base generator by heating.
- Heating in the heating step is preferably carried out at a temperature rising rate of 1 to 12° C./min from the temperature at the start of heating to the maximum heating temperature.
- the rate of temperature increase is more preferably 2 to 10°C/min, still more preferably 3 to 10°C/min.
- By setting the temperature rise rate to 1°C/min or more it is possible to prevent excessive volatilization of the acid or solvent while ensuring productivity.
- the residual stress of the object can be relaxed.
- the temperature at the start of heating is preferably 20°C to 150°C, more preferably 20°C to 130°C, and even more preferably 25°C to 120°C.
- the temperature at the start of heating refers to the temperature at which the process of heating up to the maximum heating temperature is started.
- the temperature of the film (layer) after drying is, for example, the boiling point of the solvent contained in the resin composition of the present invention.
- the heating time (heating time at the highest heating temperature) is preferably 5 to 360 minutes, more preferably 10 to 300 minutes, even more preferably 15 to 240 minutes.
- the heating temperature is preferably 30° C. or higher, more preferably 80° C. or higher, and further preferably 100° C. or higher, from the viewpoint of adhesion between layers. 120° C. or higher is particularly preferred.
- the upper limit of the heating temperature is preferably 350° C. or lower, more preferably 250° C. or lower, and even more preferably 240° C. or lower.
- Heating may be done in stages. As an example, the temperature is raised from 25° C. to 120° C. at 3° C./min, held at 120° C. for 60 minutes, heated from 120° C. to 180° C. at 2° C./min, and held at 180° C. for 120 minutes. , may be performed. It is also preferable to carry out the treatment while irradiating ultraviolet rays as described in US Pat. No. 9,159,547. Such a pretreatment process can improve the properties of the film.
- the pretreatment step is preferably performed for a short time of about 10 seconds to 2 hours, more preferably 15 seconds to 30 minutes.
- the pretreatment may be performed in two or more steps.
- the first pretreatment step may be performed in the range of 100 to 150°C, and then the second pretreatment step may be performed in the range of 150 to 200°C. good. Further, cooling may be performed after heating, and the cooling rate in this case is preferably 1 to 5°C/min.
- the heating step is preferably carried out in an atmosphere of low oxygen concentration, such as by flowing an inert gas such as nitrogen, helium or argon, or under reduced pressure, in order to prevent decomposition of the specific resin.
- the oxygen concentration is preferably 50 ppm (volume ratio) or less, more preferably 20 ppm (volume ratio) or less.
- the heating means in the heating step is not particularly limited, and examples thereof include a hot plate, an infrared oven, an electric heating oven, a hot air oven, an infrared oven and the like.
- the pattern obtained by the development step (the pattern after rinsing when the rinsing step is performed) is subjected to a post-development exposure step of exposing the pattern after the development step instead of or in addition to the heating step.
- the method for producing a cured product of the composition for forming a polyimide-containing portion of the present invention may include a post-development exposure step of exposing the pattern obtained in the development step.
- the method for producing a cured product of the composition for forming a polyimide-containing portion of the present invention may include a heating step and a post-development exposure step, or may include only one of the heating step and the post-development exposure step.
- the post-development exposure step for example, a reaction in which cyclization of a polyimide precursor or the like proceeds by exposure of a photobase generator, or a reaction in which elimination of an acid-decomposable group proceeds by exposure of a photoacid generator is promoted. can do.
- the post-development exposure step at least part of the pattern obtained in the development step may be exposed, but it is preferable to expose the entire pattern.
- the exposure amount in the post-development exposure step is preferably 50 to 20,000 mJ/cm 2 , more preferably 100 to 15,000 mJ/cm 2 in terms of exposure energy at the wavelength to which the photosensitive compound is sensitive. preferable.
- the post-development exposure step can be performed using, for example, the light source used in the exposure step described above, and broadband light is preferably used.
- a method for manufacturing a bonded body using the composition for forming a polyimide-containing portion of the present invention includes a step of preparing a substrate B having a surface provided with wiring terminals.
- the form of the substrate B may be either a wafer or a chip. These may be selected according to the desired design of the joined body.
- the substrate B has wiring terminals.
- the wiring terminals on the substrate B are also referred to as wiring terminals B hereinafter.
- the thickness of the substrate B is preferably 0.1-5 mm, more preferably 0.2-1 mm. At least a portion of the wiring terminal B is electrically connected to the wiring terminal A on the substrate A in the bonded body obtained by the bonding step described later.
- the material used for the substrate B is not particularly limited, and the same materials as those for the substrate A described above are preferably used.
- the preferable aspect of the wiring terminal B is also the same as the preferable aspect of the wiring terminal A.
- Substrate B may have an electronic circuit area containing electronic circuits.
- the electronic circuit may have an element such as a semiconductor.
- it is preferable that the electronic circuit is electrically connected to the wiring terminal.
- the diameter maximum diameter if the substrate B is not circular
- it is preferably 200 mm or more, and more preferably 250 mm or more.
- the diameter is preferably 7 mm or more, more preferably 8 mm or more, and even more preferably 10 mm or more.
- the upper limit is, for example, preferably 50 mm or less, more preferably 30 mm or less, and even more preferably 20 mm or less.
- a second polyimide-containing portion is formed on the surface of the substrate B provided with the wiring terminal. It is preferable to further include a polyimide-containing portion forming step.
- the second polyimide-containing portion forming step can be performed, for example, by the same method as the polyimide-containing portion forming step for the substrate A described above.
- the composition for forming a polyimide-containing portion of the present invention may be used, or another known composition for forming a polyimide-containing portion may be used. It is preferable to use the polyimide-containing part-forming composition of the invention.
- the composition of the polyimide-containing portion-forming composition of the present invention used in the second polyimide-containing portion-forming step the composition of the polyimide-containing portion-forming composition of the present invention used in the second polyimide-containing portion-forming step,
- the composition for forming the polyimide-containing portion used in the step of forming the polyimide-containing portion on the substrate A may be the same as or different from the composition.
- Preferred aspects of the second polyimide-containing portion are the same as preferred aspects of the polyimide-containing portion formed on the substrate A described above. It is believed that in the bonding step described later, the second polyimide-containing portion and the polyimide-containing portion formed on the substrate A are bonded so that at least a portion thereof is in contact with each other, thereby improving the adhesiveness of the bonded body.
- the glass transition temperature of the second polyimide-containing portion is preferably lower than the bonding temperature in the bonding step.
- the glass transition temperature of the second polyimide-containing portion is preferably 30 ° C. or more lower than the bonding temperature in the bonding step, more preferably 50 ° C. or more, and 70 ° C. or more. is more preferred.
- the glass transition temperature of the second polyimide-containing portion is preferably 30° C. or more higher than the bonding temperature in the bonding step.
- a planarization step of planarizing the surface of the polyimide-containing portion of the substrate A is performed between the polyimide-containing portion forming step and the bonding step. It is preferred to include In the bonding step described later, the flattened polyimide-containing portion of the base material A and the surface of the base material B (or the surface of the second polyimide-containing portion, which may be flattened) are in contact with each other. preferably.
- the wiring terminal A on the substrate A is exposed from the polyimide-containing portion by the planarization.
- the flattening may be performed by physical polishing such as cutting, mechanical polishing, grinding, plasma treatment, laser ablation, or by chemical polishing such as CMP (Chemical Mechanical Polishing). Also, these methods may be combined, such as performing CMP after cutting. Specifically, for example, the surface of the polyimide-containing portion is cut with a diamond cutting tool to expose a new surface of the polyimide-containing portion and the wiring terminal A. By flattening the wiring terminal A and the polyimide-containing portion on the substrate A so that the wiring terminal A is exposed, the wiring terminal A and the polyimide-containing portion can be collectively flattened to expose the wiring terminal A. Become.
- Planarization can be performed, for example, with a surface planer.
- the surface planer include those in which a diamond tool is attached to a spindle, such as DFS8910, DFS8960, DAS8920, and DAS8930 (all trade names) manufactured by Disco.
- the polyimide-containing portion is preferably planarized together with the wiring terminal A.
- the TTV (Total Thickness Variation) of the polyimide-containing portion and the wiring terminal A is preferably 10 ⁇ m or less, more preferably 5 ⁇ m or less, and 3 ⁇ m or less. More preferred.
- TTV means that the area 1 mm or more inside from the edge of the polyimide-containing portion is divided into 2 mm square sections (if the area of the polyimide containing portion is small, etc., it cannot be divided into 2 mm square sections,
- the entire area inside 1 mm or more from the edge of the part is defined as one section), and for each section, the maximum thickness between one surface and the other surface (T1), and the one surface and the other surface Measure the minimum thickness (T2) between, calculate the film thickness difference (T1-T2) for each section, rank each section in descending order of the film thickness difference (T1-T2), the highest section
- the number of partition groups corresponding to 10% of the total number of partitions (rounded down if there is a decimal point) and the lowest partition (smallest film thickness difference) in descending order of film thickness difference from (largest film thickness difference) 10% of the total number of compartments (rounded down if there is a decimal point) in descending order of film thickness difference from the remaining compartment groups.
- TTV of a polyimide-containing portion when specifically referring to the TTV of a polyimide-containing portion as defined herein, it may be referred to as a "compartment-rated TTV.”
- the TTV of the polyimide-containing portion By setting the TTV of the polyimide-containing portion to the upper limit value or less, the film thickness becomes generally uniform, and the adhesiveness to the substrate B is improved.
- the polyimide-containing portion of the present invention preferably has a surface roughness Ra of 10 nm or more and 1.5 ⁇ m or less on the side opposite to the side in contact with the surface of the substrate A.
- the upper limit is preferably 1 ⁇ m or less, more preferably 500 nm or less, still more preferably 300 nm or less, even more preferably 200 nm or less, even more preferably 150 nm or less, and 120 nm. The following are even more preferred.
- a second planarization for planarizing the surface of the second polyimide-containing portion is performed between the step of forming the second polyimide-containing portion and the bonding step. It is preferable to include steps.
- the second planarization process can be performed by the same method as the planarization process for the substrate A described above.
- a method for producing a bonded body using the composition for forming a polyimide-containing portion of the present invention includes a bonding step of bonding the surface of the substrate A having the polyimide-containing portion and the surface of the substrate B having the wiring terminal. .
- the bonding step is a step of bonding the surface of the substrate A having the polyimide-containing portion and the surface of the substrate B having the second polyimide-containing portion.
- the wiring terminal A on the substrate A and the wiring terminal B on the substrate B are electrically bonded.
- the electrodes included in the surface of the substrate A having the polyimide-containing portion and the electrodes on the surface of the substrate B having the wiring terminals are in direct contact with each other. is one of That is, it is also preferable that neither the wiring terminal A nor the wiring terminal B have a conducting path.
- the glass transition temperature of the polyimide-containing portion is lower than the bonding temperature, so that the adhesiveness and electrical connectivity between the substrates A and B can be ensured even when no conducting paths are used. .
- Bonding is preferably performed by means including heating, more preferably by means including heating and pressure.
- the temperature during bonding (bonding temperature) is preferably 100° C. or higher, more preferably 150° C. or higher, and even more preferably 180° C. or higher.
- the upper limit is preferably 450°C or lower, more preferably 400°C or lower, even more preferably 380°C or lower, particularly preferably 350°C or lower, and preferably 300°C or lower. It is more preferably 280° C. or lower, even more preferably 260° C. or lower, and even more preferably 250° C. or lower.
- This temperature is preferably a temperature near the melting point of the conductive path, considering that the conductive path is melted and the electrodes can be joined together, as described above.
- the heating time in the bonding step is not particularly limited, but is preferably 5 seconds or longer, more preferably 1 minute or longer, and even more preferably 2 minutes or longer.
- a practical upper limit is 30 minutes or less.
- the heating environment is not particularly limited, but it is preferable to perform the heating under a reduced pressure atmosphere while mechanically pressurizing the polyimide-containing portion.
- the atmospheric pressure is preferably 1 ⁇ 10 ⁇ 5 mbar or higher, more preferably 1 ⁇ 10 ⁇ 4 mbar or higher, and even more preferably 5 ⁇ 10 ⁇ 4 mbar or higher.
- the upper limit is preferably 0.1 mbar or less, more preferably 1 ⁇ 10 ⁇ 2 mbar or less, and even more preferably 5 ⁇ 10 ⁇ 3 mbar or less.
- Bonding is preferably performed by sandwiching two substrates (substrate A and substrate B), and at this time, it is preferable to apply pressure to the substrates.
- the pressure applied to the substrate is preferably 1 kN or more, more preferably 5 kN or more, and even more preferably 10 kN or more.
- a practical upper limit is 100 kN or less.
- the device used in the bonding step is not particularly limited, but a device used for reflowing electronic components can be preferably used.
- the temperature of the substrate A provided with the polyimide-containing portion is preheated to 70° C. or higher.
- the substrate B includes the second polyimide-containing part, it is also preferable that the temperature of the substrate B is preheated to 70° C. or higher.
- the temperature is preferably 70° C. or higher, more preferably 90° C. or higher.
- the upper limit of the temperature is not particularly limited, it is preferably 130° C. or less. According to the above aspect, the tact time of the bonding process can be reduced. In addition, the fluidity of the polyimide-containing portion during bonding is improved, and the maximum peel resistance may be improved.
- the method for producing a joined body using the composition for forming a polyimide-containing portion of the present invention does not preclude interposing other steps between the steps defined above.
- the bonding process the example in which the substrate A and the substrate B are faced face-to-face and bonded has been mainly described, but a form in which a plurality of substrates B are arranged in parallel with respect to the substrate A and bonded together has been described. good too.
- FIG. 2 is a process explanatory view schematically showing (a part of) the process of bonding the substrates in the method of manufacturing a joined body according to one embodiment of the present invention, using cross-sectional views.
- a substrate A (underlying substrate) 1 having an electronic circuit region 8 provided on a silicon wafer 1x and electrodes 31 (wiring terminals A) attached thereon is prepared (FIG. 2(a)).
- An electronic circuit 81 made of a conductor or a semiconductor is already formed inside the electronic circuit area 8 of the substrate A1.
- a method for forming an electronic circuit is not particularly limited, and it can be formed by a standard method.
- the structure and members of the electronic circuit are not particularly limited, and examples thereof include a transistor and a wiring structure that electrically connects the transistor to an electrode.
- a member (resin composition layer) 4 made of the resin composition is formed by applying a resin composition to the surface P0 of the substrate A1 on which the electrodes are arranged (the surface having the electronic circuit region) (FIG. 2(b)).
- the resin composition layer may be heated and dried (drying step). After drying, the resin composition layer 4 may be patterned by photolithography, ion sputtering, or the like.
- the resin composition layer 4 is heated to promote cyclization to form a cured polyimide-containing portion 41 (FIG. 2(c)).
- a polyimide-containing portion-provided substrate 1y in which the polyimide-containing portion 41 is disposed on the substrate A1 is formed.
- the polyimide-containing portion 41 may shrink compared to the resin composition layer 4 due to curing.
- the shrinkage rate is not particularly limited, and a smaller shrinkage rate may be used, or no shrinkage may occur upon curing.
- the substrate A shown in the drawing has only the electrodes 31 as the wiring terminals A, a conductive path may be formed on the electrodes 31 .
- the conductive path may be formed in the substrate A from the beginning, or the polyimide-containing portion may be patterned before curing, and the conductive path may be formed in the patterned portion by plating or the like.
- the heights h1 and h2 of the electrodes 31 vary.
- the surface 4a of the polyimide-containing portion is also wavy and not flat.
- planarization is performed to eliminate such variations in the height of the electrode 31, expose the tip surface thereof, and planarize the surface of the polyimide-containing portion. It is considered that the adhesion of the substrate is improved by planarizing in this way. Also, it is considered that the bondability between the wiring terminals can be improved without forming the conducting path.
- FIG. 3 shows the polyimide-containing portion-disposed substrate (laminate) 1z after flattening.
- the tip 31a of the electrode 31 is exposed on the surface 4b of the polyimide-containing portion, and the entire surface 4b of the polyimide-containing portion is flattened.
- a substrate B is separately prepared for the laminate (flattened polyimide-containing portion-disposed substrate) 1z (FIG. 4A).
- the substrate B2 includes a silicon wafer 2x having through-hole electrodes 2y, a circuit wiring region 8 having circuit wiring 81 disposed therein, and electrodes 32 (wiring terminals B) formed in the circuit wiring region 8.
- the second polyimide-containing portion 42 is also formed on the surface of the substrate B having the wiring terminal B, and the surface 2a thereof is planarized in the same manner as the surface of the polyimide-containing portion 41 of the substrate A.
- the formation and flattening of the second polyimide-containing portion 42 can be performed by the same method as the formation and flattening of the polyimide-containing portion 41 .
- the surface of the polyimide-containing portion 41 and the electrode 31 of the substrate A and the surface of the second polyimide-containing portion 42 and the electrode 32 of the substrate B are both flattened. Even if there is no conductive path, the electrical connectivity is improved. At this time, alignment (alignment) is performed so that the electrodes 31 of the laminate and the electrodes 32 provided on the substrate B2 are in contact with each other.
- alignment is performed so that the electrodes 31 of the laminate and the electrodes 32 provided on the substrate B2 are in contact with each other.
- the electrode 31 is separated from the polyimide-containing portion 41 (second polyimide-containing portion 41).
- a conductive path may be formed on the electrode 32 at the wiring terminal B as well.
- the conducting path may be formed in the substrate B from the beginning, or the second polyimide-containing portion may be patterned before curing, and the patterning portion may be plated to form the conducting path.
- the aligned substrate B2 and the laminate 1z are brought into contact with each other via the polyimide-containing portion 41 and the second polyimide-containing portion 42 at the bonding surface P1 and bonded (FIG. 4B). ).
- a bonded body 100 in which two substrates are bonded is formed.
- the electrodes 31 and 32 are electrically joined (joining step).
- the polyimide-containing portion 41 is softened by the above heating, and the surface 4b of the polyimide-containing portion of the laminate 1z and the surface 2a of the substrate B (flattened surface of the second polyimide-containing portion 42) are bonded together. to form the bonded body 100 .
- the glass transition temperature of the polyimide-containing portion is lower than the bonding temperature in the bonding step, the polyimide-containing portion is sufficiently softened and is considered to have excellent adhesiveness.
- the substrate A and the substrate B can be electrically connected to each other, and both can be firmly fixed.
- the contact surfaces are in a precise and accurate contact state with the substrate B2. can be obtained. By realizing a more precise and accurate contact state, it is possible to effectively suppress voids that tend to occur on the contact surface.
- a device according to the present invention includes a joined body obtained by a method for producing a joined body using the composition for forming a polyimide-containing portion of the present invention.
- a method of manufacturing a semiconductor device of the present invention includes the method of manufacturing a bonded body of the present invention.
- Devices according to the present invention include semiconductor devices, electronic devices, etc., and are preferably semiconductor devices or electronic devices. For devices, see, for example, "Illustrated All About State-of-the-Art Semiconductor Package Technology" edited by the Semiconductor New Technology Study Group, pp.
- composition for forming a polyimide-containing portion of the present invention can be applied to a wide variety of applications such as mounting of LED (light emitting diode) elements, mounting of optical elements for flat panel displays, and mounting of power semiconductor packages.
- FIG. 5 is a cross-sectional view schematically showing a three-dimensional mounting device.
- a laminate 101 in which a plurality of semiconductor elements (semiconductor chips) 101a to 101d are laminated is arranged on a wiring substrate 120.
- Each of the plurality of semiconductor elements 101a-101d is made of a semiconductor wafer such as a silicon substrate.
- a laminated body 101 has a structure in which a semiconductor element 101a having no through electrodes and semiconductor elements 101b to 101d having through electrodes 102b to 102d are flip-chip connected. Connection pads on the semiconductor element side having through electrodes are connected by metal bumps 103a, 103b, 103c such as solder bumps.
- a resin layer 110 is formed between the semiconductor elements 101a to 101d.
- the method for manufacturing a joined body in the present invention can be used. That is, for example, at least one (preferably all) of the resin layers 110 can be a polyimide-containing portion made of the composition for forming a polyimide-containing portion of the present invention.
- a surface electrode 120 a is provided on one surface of the wiring board 120 .
- An insulating layer 115 having a rewiring layer 105 formed thereon is arranged between the wiring substrate 120 and the laminate (substrate/substrate laminate) 101 .
- One end of the rewiring layer 105 is connected to an electrode pad formed on the surface of the semiconductor element 101d facing the rewiring layer 105 via a metal bump 103d such as a solder bump.
- the other end of the rewiring layer 105 is connected to the surface electrode 120a of the wiring board via a metal bump 103e such as a solder bump.
- a resin layer 110 a is formed between the insulating layer 115 and the laminate 101 .
- the composition for forming a polyimide-containing portion of the present invention can also be used to bond the insulating layer 115 and the laminate 101 together. That is, for example, the resin layer 110a can be used as the polyimide-containing portion described above. A resin layer 110 b is formed between the insulating layer 115 and the wiring board 120 .
- the composition for forming a polyimide-containing portion of the present invention can also be used to bond the insulating layer 115 and the wiring substrate 120 together. That is, for example, the resin layer 110b can be the polyimide-containing portion described above.
- the composition for forming a polyimide-containing part of the present invention preferably contains at least one resin selected from the group consisting of polyimides and polyimide precursors (hereinafter also referred to as "specific resin"), and a solvent. It preferably contains a precursor and a solvent. Moreover, it is preferable that the composition for forming a polyimide-containing part of the present invention further contains a photosensitive compound.
- the photosensitive compound includes a photopolymerization initiator, a photoacid generator, and the like, and a photopolymerization initiator is preferred.
- the resin composition of the present invention preferably contains at least one resin (specific resin) selected from the group consisting of polyimides and polyimide precursors, and more preferably contains a polyimide precursor.
- the specific resin preferably has a polymerizable group, and more preferably contains a radically polymerizable group.
- the resin composition of the present invention preferably contains a radical polymerization initiator described later, and contains a radical polymerization initiator described later and a radical cross-linking agent described later. is more preferred.
- a sensitizer described later can be included.
- a negative photosensitive film is formed from the resin composition of the present invention.
- the specific resin may have a polarity conversion group such as an acid-decomposable group.
- the resin composition of the present invention preferably contains a photoacid generator, which will be described later. From such a resin composition of the present invention, for example, a chemically amplified positive photosensitive film or negative photosensitive film is formed.
- polyimide precursor Although the type of the polyimide precursor used in the present invention is not particularly limited, it preferably contains a repeating unit represented by the following formula (2).
- a 1 and A 2 each independently represent an oxygen atom or -NH-
- R 111 represents a divalent organic group
- R 115 represents a tetravalent organic group
- R 113 and R 114 each independently represent a hydrogen atom or a monovalent organic group.
- a 1 and A 2 in formula (2) each independently represent an oxygen atom or —NH—, preferably an oxygen atom.
- R 111 in formula (2) represents a divalent organic group.
- divalent organic groups include groups containing linear or branched aliphatic groups, cyclic aliphatic groups and aromatic groups, linear or branched aliphatic groups having 2 to 20 carbon atoms, A cyclic aliphatic group having 3 to 20 carbon atoms, an aromatic group having 3 to 20 carbon atoms, or a group consisting of a combination thereof is preferable, and a group containing an aromatic group having 6 to 20 carbon atoms is more preferable.
- the hydrocarbon group in the chain may be substituted with a group containing a hetero atom, and in the cyclic aliphatic group and the aromatic group, the ring member hydrocarbon group is a hetero atom.
- may be substituted with a group containing Groups represented by -Ar- and -Ar-L-Ar- are exemplified as preferred embodiments of the present invention, and groups represented by -Ar-L-Ar- are particularly preferred.
- Ar is each independently an aromatic group
- L is a single bond, or an aliphatic hydrocarbon group having 1 to 10 carbon atoms which may be substituted with a fluorine atom, -O-, -CO -, -S-, -SO 2 - or -NHCO-, or a group consisting of a combination of two or more of the above. Preferred ranges for these are as described above.
- R 111 is preferably derived from a diamine.
- Diamines used in the production of polyimide precursors include linear or branched aliphatic, cyclic aliphatic or aromatic diamines. Only one type of diamine may be used, or two or more types may be used. Specifically, a linear or branched aliphatic group having 2 to 20 carbon atoms, a cyclic aliphatic group having 3 to 20 carbon atoms, an aromatic group having 3 to 20 carbon atoms, or a group consisting of a combination thereof is preferably a diamine containing, more preferably a diamine containing an aromatic group having 6 to 20 carbon atoms. In the straight-chain or branched aliphatic group, the hydrocarbon group in the chain may be substituted with a group containing a heteroatom. may be substituted with a group containing Examples of groups containing aromatic groups include:
- * represents a binding site with other structures.
- diamines include 1,2-diaminoethane, 1,2-diaminopropane, 1,3-diaminopropane, 1,4-diaminobutane or 1,6-diaminohexane; ,3-diaminocyclopentane, 1,2-, 1,3- or 1,4-diaminocyclohexane, 1,2-, 1,3- or 1,4-bis(aminomethyl)cyclohexane, bis-(4- aminocyclohexyl)methane, bis-(3-aminocyclohexyl)methane, 4,4′-diamino-3,3′-dimethylcyclohexylmethane or isophoronediamine; m- or p-phenylenediamine, diaminotoluene, 4,4′- or 3,3'-diaminobiphenyl, 4,4'-diaminodiphenyl ether, 3, 3,3
- diamines (DA-1) to (DA-18) described in paragraphs 0030 to 0031 of International Publication No. 2017/038598.
- diamines having two or more alkylene glycol units in the main chain described in paragraphs 0032 to 0034 of International Publication No. 2017/038598 are preferably used.
- R 111 is preferably represented by -Ar-L-Ar- from the viewpoint of the flexibility of the resulting organic film.
- Ar is each independently an aromatic group
- L is an aliphatic hydrocarbon group having 1 to 10 carbon atoms which may be substituted with a fluorine atom, -O-, -CO-, -S- , —SO 2 — or —NHCO—, or a group consisting of a combination of two or more of the above.
- Ar is preferably a phenylene group
- L is preferably an aliphatic hydrocarbon group having 1 or 2 carbon atoms which may be substituted with a fluorine atom, -O-, -CO-, -S- or -SO 2 - .
- the aliphatic hydrocarbon group here is preferably an alkylene group.
- R 111 is preferably a divalent organic group represented by the following formula (51) or (61).
- a divalent organic group represented by Formula (61) is more preferable.
- Equation (51) In formula (51), R 50 to R 57 are each independently a hydrogen atom, a fluorine atom or a monovalent organic group, and at least one of R 50 to R 57 is a fluorine atom, a methyl group or a trifluoro It is a methyl group, and each * independently represents a binding site to the nitrogen atom in formula (2).
- the monovalent organic groups represented by R 50 to R 57 include unsubstituted alkyl groups having 1 to 10 carbon atoms (preferably 1 to 6 carbon atoms), A fluorinated alkyl group and the like can be mentioned.
- R 58 and R 59 are each independently a fluorine atom, a methyl group, or a trifluoromethyl group, and * is each independently a bonding site to the nitrogen atom in formula (2) show.
- Diamines that give the structure of formula (51) or (61) include 2,2′-dimethylbenzidine, 2,2′-bis(trifluoromethyl)-4,4′-diaminobiphenyl, 2,2′-bis (Fluoro)-4,4'-diaminobiphenyl, 4,4'-diaminooctafluorobiphenyl and the like. These may be used alone or in combination of two or more.
- R 115 in formula (2) represents a tetravalent organic group.
- a tetravalent organic group containing an aromatic ring is preferable, and a group represented by the following formula (5) or (6) is more preferable.
- each * independently represents a binding site to another structure.
- R 112 is a single bond or a divalent linking group, a single bond, or an aliphatic hydrocarbon group having 1 to 10 carbon atoms optionally substituted with a fluorine atom, —O—, -CO-, -S-, -SO 2 -, and -NHCO-, and preferably a group selected from combinations thereof, and the number of carbon atoms optionally substituted with a single bond or a fluorine atom It is more preferably a group selected from 1 to 3 alkylene groups, -O-, -CO-, -S- and -SO 2 -, and -CH 2 -, -C(CF 3 ) 2 -, - More preferably, it is a divalent group selected from the group consisting of C(CH 3 ) 2 -, -O-, -CO-, -S- and -SO 2 -.
- R 115 includes a tetracarboxylic acid residue remaining after removal of an anhydride group from a tetracarboxylic dianhydride.
- the polyimide precursor may contain only one type of tetracarboxylic dianhydride residue as a structure corresponding to R115 , or may contain two or more types thereof.
- the tetracarboxylic dianhydride is preferably represented by the following formula (O).
- R 115 represents a tetravalent organic group.
- the preferred range of R 115 is synonymous with R 115 in formula (2), and the preferred range is also the same.
- tetracarboxylic dianhydrides include pyromellitic dianhydride (PMDA), 3,3′,4,4′-biphenyltetracarboxylic dianhydride, 3,3′,4,4′- Diphenyl sulfide tetracarboxylic dianhydride, 3,3′,4,4′-diphenylsulfonetetracarboxylic dianhydride, 3,3′,4,4′-benzophenonetetracarboxylic dianhydride, 3,3′ ,4,4′-diphenylmethanetetracarboxylic dianhydride, 2,2′,3,3′-diphenylmethanetetracarboxylic dianhydride, 2,3,3′,4′-biphenyltetracarboxylic dianhydride, 2,3,3′,4′-benzophenonetetracarboxylic dianhydride, 4,4′-oxydiphthalic dianhydride,
- tetracarboxylic dianhydrides (DAA-1) to (DAA-5) described in paragraph 0038 of WO 2017/038598 are also preferred examples.
- R 111 and R 115 has an OH group. More specifically, R 111 includes residues of bisaminophenol derivatives.
- R 113 and R 114 in formula (2) each independently represent a hydrogen atom or a monovalent organic group.
- the monovalent organic group preferably includes a linear or branched alkyl group, a cyclic alkyl group, an aromatic group, or a polyalkyleneoxy group.
- At least one of R 113 and R 114 preferably contains a polymerizable group, more preferably both contain a polymerizable group. It is also preferred that at least one of R 113 and R 114 contains two or more polymerizable groups.
- the polymerizable group is a group capable of undergoing a cross-linking reaction by the action of heat, radicals, or the like, and is preferably a radically polymerizable group.
- the polymerizable group examples include a group having an ethylenically unsaturated bond, an alkoxymethyl group, a hydroxymethyl group, an acyloxymethyl group, an epoxy group, an oxetanyl group, a benzoxazolyl group, a blocked isocyanate group, and an amino group. be done.
- a group having an ethylenically unsaturated bond is preferred.
- Groups having an ethylenically unsaturated bond include a vinyl group, an allyl group, an isoallyl group, a 2-methylallyl group, a group having an aromatic ring directly bonded to a vinyl group (e.g., vinylphenyl group), and a (meth)acrylamide group.
- a (meth)acryloyloxy group a group represented by the following formula (III), and the like, and a group represented by the following formula (III) is preferable.
- R 200 represents a hydrogen atom, a methyl group, an ethyl group or a methylol group, preferably a hydrogen atom or a methyl group.
- * represents a binding site with another structure.
- R 201 represents an alkylene group having 2 to 12 carbon atoms, —CH 2 CH(OH)CH 2 —, a cycloalkylene group or a polyalkyleneoxy group.
- R 201 examples include ethylene, propylene, trimethylene, tetramethylene, pentamethylene, hexamethylene, octamethylene, alkylene groups such as dodecamethylene, 1,2-butanediyl, 1, 3-butanediyl group, —CH 2 CH(OH)CH 2 —, polyalkyleneoxy group, ethylene group, alkylene group such as propylene group, —CH 2 CH(OH)CH 2 —, cyclohexyl group, polyalkylene An oxy group is more preferred, and an alkylene group such as an ethylene group, a propylene group, or a polyalkyleneoxy group is even more preferred.
- alkylene groups such as dodecamethylene, 1,2-butanediyl, 1, 3-butanediyl group, —CH 2 CH(OH)CH 2 —, polyalkyleneoxy group, ethylene group, alkylene group such as propylene group, —CH 2 CH(OH)CH 2
- a polyalkyleneoxy group refers to a group in which two or more alkyleneoxy groups are directly bonded.
- the alkylene groups in the plurality of alkyleneoxy groups contained in the polyalkyleneoxy group may be the same or different.
- the arrangement of the alkyleneoxy groups in the polyalkyleneoxy group may be a random arrangement or a block arrangement. Alternatively, it may be arranged in a pattern such as an alternating pattern.
- the number of carbon atoms in the alkylene group (including the number of carbon atoms in the substituent when the alkylene group has a substituent) is preferably 2 or more, more preferably 2 to 10, and 2 to 6.
- the said alkylene group may have a substituent.
- Preferred substituents include alkyl groups, aryl groups, and halogen atoms.
- the number of alkyleneoxy groups contained in the polyalkyleneoxy group is preferably 2 to 20, more preferably 2 to 10, and even more preferably 2 to 6.
- a group to which an oxy group is bonded is preferable, a polyethyleneoxy group or a polypropyleneoxy group is more preferable, and a polyethyleneoxy group is still more preferable.
- the ethyleneoxy groups and the propyleneoxy groups may be arranged randomly, or may be arranged to form blocks. , may be arranged in a pattern such as alternately. Preferred embodiments of the number of repetitions of ethyleneoxy groups and the like in these groups are as described above.
- the polyimide precursor when R 113 is a hydrogen atom, or when R 114 is a hydrogen atom, the polyimide precursor may form a tertiary amine compound having an ethylenically unsaturated bond and a counter salt. good.
- tertiary amine compounds having such ethylenically unsaturated bonds include N,N-dimethylaminopropyl methacrylate.
- R 113 and R 114 may be a polarity conversion group such as an acid-decomposable group.
- the acid-decomposable group is not particularly limited as long as it is decomposed by the action of an acid to generate an alkali-soluble group such as a phenolic hydroxy group or a carboxyl group. , a tertiary alkyl ester group and the like are preferable, and from the viewpoint of exposure sensitivity, an acetal group or a ketal group is more preferable.
- acid-decomposable groups include tert-butoxycarbonyl, isopropoxycarbonyl, tetrahydropyranyl, tetrahydrofuranyl, ethoxyethyl, methoxyethyl, ethoxymethyl, trimethylsilyl, and tert-butoxycarbonylmethyl. groups, trimethylsilyl ether groups, and the like. From the viewpoint of exposure sensitivity, an ethoxyethyl group or a tetrahydrofuranyl group is preferred.
- the polyimide precursor preferably has a fluorine atom in its structure.
- the content of fluorine atoms in the polyimide precursor is preferably 10% by mass or more, and preferably 20% by mass or less.
- the polyimide precursor may be copolymerized with an aliphatic group having a siloxane structure.
- an aliphatic group having a siloxane structure there is an embodiment using bis(3-aminopropyl)tetramethyldisiloxane, bis(p-aminophenyl)octamethylpentasiloxane, or the like as the diamine.
- the repeating unit represented by formula (2) is preferably a repeating unit represented by formula (2-A). That is, at least one polyimide precursor used in the present invention is preferably a precursor having a repeating unit represented by formula (2-A). By including the repeating unit represented by the formula (2-A) in the polyimide precursor, it becomes possible to further widen the width of the exposure latitude.
- a 1 and A 2 represent an oxygen atom
- R 111 and R 112 each independently represent a divalent organic group
- R 113 and R 114 each independently represents a hydrogen atom or a monovalent organic group
- at least one of R 113 and R 114 is a group containing a polymerizable group, and both are preferably groups containing a polymerizable group.
- a 1 , A 2 , R 111 , R 113 and R 114 are each independently synonymous with A 1 , A 2 , R 111 , R 113 and R 114 in formula (2), and preferred ranges are also the same.
- R 112 has the same definition as R 112 in formula (5), and the preferred range is also the same.
- the polyimide precursor may contain one type of repeating unit represented by formula (2), but may contain two or more types. It may also contain structural isomers of the repeating unit represented by formula (2). It goes without saying that the polyimide precursor may also contain other types of repeating units in addition to the repeating units of formula (2) above.
- the content of the repeating unit represented by formula (2) is 50 mol% or more of the total repeating units.
- the total content is more preferably 70 mol % or more, still more preferably 90 mol % or more, and particularly preferably more than 90 mol %.
- the upper limit of the total content is not particularly limited, and all repeating units in the polyimide precursor excluding terminals may be repeating units represented by formula (2).
- the weight average molecular weight (Mw) of the polyimide precursor is preferably 5,000 to 100,000, more preferably 10,000 to 50,000, still more preferably 15,000 to 40,000. Also, the number average molecular weight (Mn) is preferably 2,000 to 40,000, more preferably 3,000 to 30,000, still more preferably 4,000 to 20,000.
- the polyimide precursor preferably has a molecular weight distribution of 1.5 or more, more preferably 1.8 or more, and even more preferably 2.0 or more. Although the upper limit of the polyimide precursor's molecular weight dispersity is not particularly defined, it is preferably 7.0 or less, more preferably 6.5 or less, and even more preferably 6.0 or less.
- the molecular weight dispersity is a value calculated by weight average molecular weight/number average molecular weight.
- the weight average molecular weight, number average molecular weight, and degree of dispersion of at least one polyimide precursor are preferably within the above ranges. It is also preferable that the weight-average molecular weight, the number-average molecular weight, and the degree of dispersion calculated from the plurality of types of polyimide precursors as one resin are within the ranges described above.
- the polyimide used in the present invention may be an alkali-soluble polyimide or a polyimide soluble in a developer containing an organic solvent as a main component.
- the alkali-soluble polyimide refers to a polyimide that dissolves in 100 g of a 2.38% by mass tetramethylammonium aqueous solution at 23° C. by 0.1 g or more, and from the viewpoint of pattern formation, 0.5 g or more. It is preferably a polyimide that dissolves, and more preferably a polyimide that dissolves 1.0 g or more. Although the upper limit of the dissolved amount is not particularly limited, it is preferably 100 g or less.
- the polyimide is preferably a polyimide having a plurality of imide structures in its main chain from the viewpoint of the film strength and insulating properties of the resulting organic film.
- the term "main chain” refers to the relatively longest linking chain in the molecule of the polymer compound that constitutes the resin, and the term “side chain” refers to the other linking chain.
- the polyimide preferably has a fluorine atom.
- a fluorine atom is preferably included in, for example, R 132 in a repeating unit represented by formula (4) described later or R 131 in a repeating unit represented by formula (4) described later, and the formula ( It is more preferably contained as a fluorinated alkyl group in R 132 in the repeating unit represented by 4) or R 131 in the repeating unit represented by formula (4) described later.
- the amount of fluorine atoms relative to the total mass of polyimide is preferably 5% by mass or more and preferably 20% by mass or less.
- the polyimide preferably has a silicon atom.
- a silicon atom for example, is preferably contained in R 131 in a repeating unit represented by formula (4) described later, and R 131 in a repeating unit represented by formula (4) described later is an organically modified (poly ) is more preferably contained as a siloxane structure.
- the silicon atom or the organically modified (poly)siloxane structure may be contained in the side chain of the polyimide, but is preferably contained in the main chain of the polyimide.
- the amount of silicon atoms relative to the total mass of polyimide is preferably 1% by mass or more, and more preferably 20% by mass or less.
- the polyimide preferably has an ethylenically unsaturated bond.
- the polyimide may have an ethylenically unsaturated bond at the end of its main chain or in a side chain, preferably in a side chain.
- the ethylenically unsaturated bond preferably has radical polymerizability.
- the ethylenically unsaturated bond is preferably contained in R 132 in a repeating unit represented by the formula (4) described later, or R 131 in a repeating unit represented by the formula (4) described later.
- the ethylenically unsaturated bond is preferably contained in R 131 in the repeating unit represented by formula (4) described later, and ethylene is contained in R 131 in the repeating unit represented by formula (4) described later It is more preferably included as a group having a polyunsaturated bond.
- the group having an ethylenically unsaturated bond includes a group having an optionally substituted vinyl group directly bonded to an aromatic ring such as a vinyl group, an allyl group, a vinylphenyl group, a (meth)acrylamide group, a (meth) Examples include an acryloyloxy group and a group represented by the following formula (IV).
- R 20 represents a hydrogen atom, a methyl group, an ethyl group or a methylol group, preferably a hydrogen atom or a methyl group.
- R 21 is an alkylene group having 2 to 12 carbon atoms, —O—CH 2 CH(OH)CH 2 —, —C( ⁇ O)O—, —O(C ⁇ O)NH— , a (poly)alkyleneoxy group having 2 to 30 carbon atoms (the number of carbon atoms in the alkylene group is preferably 2 to 12, more preferably 2 to 6, and particularly preferably 2 or 3; the number of repetitions is preferably 1 to 12, 1 to 6 are more preferable, and 1 to 3 are particularly preferable), or a group in which two or more of these are combined.
- the alkylene group having 2 to 12 carbon atoms may be a linear, branched, cyclic, or a combination of these alkylene groups.
- an alkylene group having 2 to 8 carbon atoms is preferable, and an alkylene group having 2 to 4 carbon atoms is more preferable.
- R 21 is preferably a group represented by any one of the following formulas (R1) to (R3), more preferably a group represented by formula (R1).
- L represents a single bond, an alkylene group having 2 to 12 carbon atoms, a (poly)alkyleneoxy group having 2 to 30 carbon atoms, or a group in which two or more of these are combined
- X represents an oxygen atom or a sulfur atom
- * represents a bonding site with another structure
- ⁇ represents a bonding site with the oxygen atom to which R 21 in formula (IV) bonds.
- a preferred embodiment of an alkylene group having 2 to 12 carbon atoms or a (poly)alkyleneoxy group having 2 to 30 carbon atoms in L is the above-mentioned R 21 having 2 to 12 carbon atoms. It is the same as the preferred embodiment of the 12 alkylene group or the (poly)alkyleneoxy group having 2 to 30 carbon atoms.
- X is preferably an oxygen atom.
- * has the same meaning as * in formula (IV), and preferred embodiments are also the same.
- the structure represented by formula (R1) is, for example, a polyimide having a hydroxy group such as a phenolic hydroxy group, and a compound having an isocyanato group and an ethylenically unsaturated bond (e.g., 2-isocyanatoethyl methacrylate, etc.). Obtained by reaction.
- the structure represented by formula (R2) can be obtained, for example, by reacting a polyimide having a carboxy group with a compound having a hydroxy group and an ethylenically unsaturated bond (eg, 2-hydroxyethyl methacrylate, etc.).
- the structure represented by formula (R3) can be obtained, for example, by reacting a polyimide having a hydroxy group such as a phenolic hydroxy group with a compound having a glycidyl group and an ethylenically unsaturated bond (e.g., glycidyl methacrylate, etc.) can get.
- a polyimide having a hydroxy group such as a phenolic hydroxy group
- a compound having a glycidyl group and an ethylenically unsaturated bond e.g., glycidyl methacrylate, etc.
- * represents a binding site with another structure, preferably a binding site with the main chain of polyimide.
- the amount of ethylenically unsaturated bonds relative to the total mass of the polyimide is preferably 0.0001-0.1 mol/g, more preferably 0.0005-0.05 mol/g.
- Polyimide may have a polymerizable group other than the group having an ethylenically unsaturated bond.
- Polymerizable groups other than groups having an ethylenically unsaturated bond include cyclic ether groups such as an epoxy group and an oxetanyl group, alkoxymethyl groups such as a methoxymethyl group, and methylol groups.
- a polymerizable group other than a group having an ethylenically unsaturated bond is preferably included, for example, in R 131 in a repeating unit represented by formula (4) described below.
- the amount of the polymerizable group other than the group having an ethylenically unsaturated bond with respect to the total mass of the polyimide is preferably 0.0001 to 0.1 mol / g, preferably 0.001 to 0.05 mol / g. more preferred.
- the polyimide may have a polarity conversion group such as an acid-decomposable group.
- the acid-decomposable group in the polyimide is the same as the acid-decomposable group described for R 113 and R 114 in formula (2) above, and preferred embodiments are also the same.
- Polar conversion groups are included, for example, at R 131 and R 132 in the repeating unit represented by formula (4) described later, the terminal of polyimide, and the like.
- the acid value of polyimide is preferably 30 mgKOH/g or more, more preferably 50 mgKOH/g or more, and more preferably 70 mgKOH/g or more, from the viewpoint of improving developability. is more preferable. Moreover, the acid value is preferably 500 mgKOH/g or less, more preferably 400 mgKOH/g or less, and even more preferably 200 mgKOH/g or less. Further, when the polyimide is subjected to development using a developer containing an organic solvent as a main component (for example, "solvent development” described later), the acid value of the polyimide is preferably 1 to 35 mgKOH/g, and 2 to 30 mgKOH.
- the acid value is measured by a known method, for example, by the method described in JIS K 0070:1992.
- an acid group having a pKa of 0 to 10 is preferable, and an acid group having a pKa of 3 to 8 is more preferable, from the viewpoint of both storage stability and developability.
- the pKa is a dissociation reaction in which hydrogen ions are released from an acid, and its equilibrium constant Ka is represented by its negative common logarithm pKa.
- pKa is a value calculated by ACD/ChemSketch (registered trademark).
- the acid group is a polyvalent acid such as phosphoric acid
- the pKa is the first dissociation constant.
- the polyimide preferably contains at least one selected from the group consisting of a carboxy group and a phenolic hydroxy group, more preferably a phenolic hydroxy group.
- the polyimide preferably has a phenolic hydroxy group from the viewpoint of making the development speed with an alkaline developer appropriate.
- the polyimide may have a phenolic hydroxy group at the end of the main chain or in the side chain.
- a phenolic hydroxy group is preferably contained in, for example, R 132 in a repeating unit represented by formula (4) described later or R 131 in a repeating unit represented by formula (4) described later.
- the amount of phenolic hydroxy groups relative to the total weight of the polyimide is preferably 0.1-30 mol/g, more preferably 1-20 mol/g.
- the polyimide used in the present invention is not particularly limited as long as it is a polymer compound having an imide structure, but it preferably contains a repeating unit represented by the following formula (4).
- R 131 represents a divalent organic group and R 132 represents a tetravalent organic group.
- the polymerizable group may be located on at least one of R 131 and R 132 , and the terminal of the polyimide as shown in the following formula (4-1) or (4-2) may be located in Formula (4-1)
- R 133 is a polymerizable group, and other groups are the same as in formula (4).
- Formula (4-2) At least one of R 134 and R 135 is a polymerizable group, and when it is not a polymerizable group, it is an organic group, and the other groups are as defined in formula (4).
- R 131 represents a divalent organic group.
- Examples of the divalent organic group are the same as those for R 111 in formula (2), and the preferred range is also the same.
- R 131 also includes a diamine residue remaining after removal of the amino group of the diamine.
- Diamines include aliphatic, cycloaliphatic or aromatic diamines.
- a specific example is the example of R 111 in formula (2) of the polyimide precursor.
- R 131 is preferably a diamine residue having at least two alkylene glycol units in its main chain from the viewpoint of more effectively suppressing warping during baking. More preferably, it is a diamine residue containing two or more ethylene glycol chains, propylene glycol chains, or both in one molecule, and more preferably the above diamine, which does not contain an aromatic ring. is.
- Diamines containing two or more ethylene glycol chains, propylene glycol chains, or both in one molecule include Jeffamine (registered trademark) KH-511, ED-600, ED-900, ED-2003, and EDR. -148, EDR-176, D-200, D-400, D-2000, D-4000 (trade names, manufactured by HUNTSMAN Co., Ltd.), 1-(2-(2-(2-aminopropoxy)ethoxy) propoxy)propan-2-amine, 1-(1-(1-(2-aminopropoxy)propan-2-yl)oxy)propan-2-amine, and the like.
- R 132 represents a tetravalent organic group.
- examples of the tetravalent organic group are the same as those for R 115 in formula (2), and the preferred range is also the same.
- four bonds of a tetravalent organic group exemplified as R 115 combine with four —C( ⁇ O)— moieties in the above formula (4) to form a condensed ring.
- R 132 includes a tetracarboxylic acid residue remaining after removal of the anhydride group from the tetracarboxylic dianhydride.
- a specific example is the example of R 115 in formula (2) of the polyimide precursor. From the viewpoint of strength of the organic film, R 132 is preferably an aromatic diamine residue having 1 to 4 aromatic rings.
- R 131 and R 132 has an OH group. More specifically, R 131 is 2,2-bis(3-hydroxy-4-aminophenyl)propane, 2,2-bis(3-hydroxy-4-aminophenyl)hexafluoropropane, 2,2- Bis(3-amino-4-hydroxyphenyl)propane, 2,2-bis(3-amino-4-hydroxyphenyl)hexafluoropropane, and the above (DA-1) to (DA-18) are preferred examples. and more preferred examples of R 132 are the above (DAA-1) to (DAA-5).
- the polyimide preferably has a fluorine atom in its structure.
- the content of fluorine atoms in the polyimide is preferably 10% by mass or more, and preferably 20% by mass or less.
- the polyimide may be copolymerized with an aliphatic group having a siloxane structure.
- the diamine component include bis(3-aminopropyl)tetramethyldisiloxane and bis(p-aminophenyl)octamethylpentasiloxane.
- the main chain end of the polyimide is blocked with a terminal blocking agent such as monoamine, acid anhydride, monocarboxylic acid, monoacid chloride compound, monoactive ester compound. preferably.
- monoamines examples include aniline, 2-ethynylaniline, 3-ethynylaniline, 4-ethynylaniline, 5-amino-8-hydroxyquinoline, 1-hydroxy-7 -aminonaphthalene, 1-hydroxy-6-aminonaphthalene, 1-hydroxy-5-aminonaphthalene, 1-hydroxy-4-aminonaphthalene, 2-hydroxy-7-aminonaphthalene, 2-hydroxy-6-aminonaphthalene, 2 -hydroxy-5-aminonaphthalene, 1-carboxy-7-aminonaphthalene, 1-carboxy-6-aminonaphthalene, 1-carboxy-5-aminonaphthalene, 2-carboxy-7-aminonaphthalene, 2-carboxy-6- Aminonaphthalene, 2-carboxy-5-aminonaphthalene, 2-aminobenzoic acid, 3-aminobenzoic acid, 4-aminobenzoic acid, 2-aminobenzoic acid
- the imidization rate (also referred to as "ring closure rate") of the polyimide is preferably 70% or more, more preferably 80% or more, from the viewpoint of the film strength, insulating properties, etc. of the resulting organic film. More preferably, it is 90% or more.
- the upper limit of the imidization rate is not particularly limited, and may be 100% or less.
- the imidization rate is measured, for example, by the method described below. The infrared absorption spectrum of the polyimide is measured, and the peak intensity P1 near 1377 cm ⁇ 1 , which is the absorption peak derived from the imide structure, is obtained. Next, after heat-treating the polyimide at 350° C.
- the polyimide may contain repeating units represented by the above formula (4) that all contain one type of R 131 or R 132 , and the above formula ( 4) may contain a repeating unit. Moreover, the polyimide may contain other types of repeating units in addition to the repeating units represented by the above formula (4). Other types of repeating units include, for example, repeating units represented by formula (2) above.
- polyimide for example, a method of reacting a tetracarboxylic dianhydride and a diamine (partially replaced with a monoamine terminal blocker) at a low temperature, a method of reacting a tetracarboxylic dianhydride (partially with an acid anhydride) at a low temperature a monoacid chloride compound or a monoactive ester compound) and a diamine, a diester is obtained by a tetracarboxylic dianhydride and an alcohol, and then a diamine (a part of which is a monoamine A method of reacting in the presence of a condensing agent) with a condensing agent, a diester is obtained by tetracarboxylic acid dianhydride and alcohol, then the remaining dicarboxylic acid is acid chloride, diamine (part of which is a monoamine Using a method such as a method of reacting with a terminal blocking agent) to obtain a polyimide precursor
- the weight average molecular weight (Mw) of the polyimide is preferably 5,000 to 100,000, more preferably 10,000 to 50,000, still more preferably 15,000 to 40,000. By setting the weight average molecular weight to 5,000 or more, the folding resistance of the cured film can be improved. A weight-average molecular weight of 15,000 or more is particularly preferable in order to obtain an organic film having excellent mechanical properties (e.g., elongation at break). Also, the number average molecular weight (Mn) of the polyimide is preferably 2,000 to 40,000, more preferably 3,000 to 30,000, still more preferably 4,000 to 20,000. The polyimide has a molecular weight distribution of preferably 1.5 or more, more preferably 1.8 or more, and even more preferably 2.0 or more.
- the upper limit of the polyimide molecular weight dispersion is not particularly defined, it is preferably 7.0 or less, more preferably 6.5 or less, and even more preferably 6.0 or less.
- the weight-average molecular weight, number-average molecular weight, and degree of dispersion of at least one type of polyimide are preferably within the above ranges. It is also preferable that the weight-average molecular weight, the number-average molecular weight, and the degree of dispersion calculated using the above plural kinds of polyimides as one resin are within the ranges described above.
- Polyimide precursors and the like for example, a method of reacting a tetracarboxylic dianhydride and a diamine at a low temperature, a method of reacting a tetracarboxylic dianhydride and a diamine at a low temperature to obtain a polyamic acid, a condensing agent or an alkylating agent A method of esterification using a tetracarboxylic dianhydride and an alcohol to obtain a diester, followed by a reaction with a diamine in the presence of a condensing agent, a method of reacting a tetracarboxylic dianhydride and an alcohol to obtain a diester, After that, the remaining dicarboxylic acid can be acid-halogenated using a halogenating agent and reacted with a diamine.
- the method of obtaining a diester from a tetracarboxylic dianhydride and an alcohol, then acid-halogenating the remaining dicarboxylic acid with a halogenating agent, and reacting it with a diamine is more preferred.
- the condensing agent include dicyclohexylcarbodiimide, diisopropylcarbodiimide, 1-ethoxycarbonyl-2-ethoxy-1,2-dihydroquinoline, 1,1-carbonyldioxy-di-1,2,3-benzotriazole, N, N'-disuccinimidyl carbonate, trifluoroacetic anhydride and the like can be mentioned.
- alkylating agent examples include N,N-dimethylformamide dimethyl acetal, N,N-dimethylformamide diethyl acetal, N,N-dialkylformamide dialkyl acetal, trimethyl orthoformate and triethyl orthoformate.
- halogenating agent examples include thionyl chloride, oxalyl chloride, phosphorus oxychloride and the like.
- organic solvent In the method for producing a polyimide precursor or the like, it is preferable to use an organic solvent in the reaction. One type of organic solvent may be used, or two or more types may be used.
- the organic solvent can be appropriately determined depending on the raw material, but pyridine, diethylene glycol dimethyl ether (diglyme), N-methylpyrrolidone, N-ethylpyrrolidone, ethyl propionate, dimethylacetamide, dimethylformamide, tetrahydrofuran, ⁇ -butyrolactone, and the like. are exemplified.
- a basic compound In the method for producing a polyimide precursor or the like, it is preferable to add a basic compound during the reaction.
- One type of basic compound may be used, or two or more types may be used.
- the basic compound can be appropriately determined depending on the raw material, but triethylamine, diisopropylethylamine, pyridine, 1,8-diazabicyclo[5.4.0]undec-7-ene, N,N-dimethyl-4-amino Pyridine and the like are exemplified.
- terminal blocking agents include monoalcohols, phenols, thiols, thiophenols, monoamines, and the like. It is more preferable to use monoalcohols, phenols and monoamines from the viewpoint of their properties.
- Preferred monoalcohol compounds include primary alcohols such as methanol, ethanol, propanol, butanol, hexanol, octanol, dodecinol, benzyl alcohol, 2-phenylethanol, 2-methoxyethanol, 2-chloromethanol and furfuryl alcohol, and isopropanol. , 2-butanol, cyclohexyl alcohol, cyclopentanol and 1-methoxy-2-propanol, and tertiary alcohols such as t-butyl alcohol and adamantane alcohol.
- Preferable phenolic compounds include phenols such as phenol, methoxyphenol, methylphenol, naphthalene-1-ol, naphthalene-2-ol, and hydroxystyrene.
- Preferred monoamine compounds include aniline, 2-ethynylaniline, 3-ethynylaniline, 4-ethynylaniline, 5-amino-8-hydroxyquinoline, 1-hydroxy-7-aminonaphthalene, 1-hydroxy-6- aminonaphthalene, 1-hydroxy-5-aminonaphthalene, 1-hydroxy-4-aminonaphthalene, 2-hydroxy-7-aminonaphthalene, 2-hydroxy-6-aminonaphthalene, 2-hydroxy-5-aminonaphthalene, 1- Carboxy-7-aminonaphthalene, 1-carboxy-6-aminonaphthalene, 1-carboxy-5-aminonaphthalene, 2-carboxy-7-aminonaphthalene, 2-carboxy-6-amin
- Preferred capping agents for amino groups are carboxylic acid anhydrides, carboxylic acid chlorides, carboxylic acid bromide, sulfonic acid chlorides, sulfonic anhydrides, sulfonic acid carboxylic acid anhydrides, etc., more preferably carboxylic acid anhydrides and carboxylic acid chlorides. preferable.
- Preferred carboxylic anhydride compounds include acetic anhydride, propionic anhydride, oxalic anhydride, succinic anhydride, maleic anhydride, phthalic anhydride, benzoic anhydride, 5-norbornene-2,3-dicarboxylic anhydride, and the like. is mentioned.
- Preferred compounds of carboxylic acid chlorides include acetyl chloride, acrylic acid chloride, propionyl chloride, methacrylic acid chloride, pivaloyl chloride, cyclohexanecarbonyl chloride, 2-ethylhexanoyl chloride, cinnamoyl chloride, and 1-adamantanecarbonyl chloride. , heptafluorobutyryl chloride, stearic acid chloride, benzoyl chloride, and the like.
- a step of depositing a solid may be included in the production of the polyimide precursor or the like. Specifically, after filtering off the water absorption by-products of the dehydration condensation agent coexisting in the reaction solution as necessary, water, aliphatic lower alcohol, or a poor solvent such as a mixture thereof, the obtained A polyimide precursor or the like can be obtained by adding a polymer component and depositing the polymer component, depositing it as a solid, and drying it. In order to improve the degree of purification, operations such as redissolution, reprecipitation, drying, etc. of the polyimide precursor may be repeated. Furthermore, a step of removing ionic impurities using an ion exchange resin may be included.
- the content of the specific resin in the resin composition of the present invention is preferably 20% by mass or more, more preferably 30% by mass or more, and 40% by mass or more with respect to the total solid content of the resin composition. is more preferable, and 50% by mass or more is even more preferable. Further, the content of the resin in the resin composition of the present invention is preferably 99.5% by mass or less, more preferably 99% by mass or less, more preferably 98% by mass, based on the total solid content of the resin composition. % or less, more preferably 97 mass % or less, and even more preferably 95 mass % or less.
- the resin composition of the present invention may contain only one type of specific resin, or may contain two or more types. When two or more types are included, the total amount is preferably within the above range.
- the resin composition of the present invention preferably contains at least two resins.
- the resin composition of the present invention may contain a total of two or more of the specific resin and other resins described later, or may contain two or more of the specific resins. It is preferable to include two or more kinds.
- the resin composition of the present invention contains two or more specific resins, for example, two or more polyimides that are polyimide precursors and have different dianhydride-derived structures (R 115 in the above formula (2)) It preferably contains a precursor.
- the resin composition of the present invention may contain the specific resin described above and other resins different from the specific resin (hereinafter also simply referred to as "other resins").
- Other resins include phenolic resins, polyamides, epoxy resins, polysiloxanes, resins containing siloxane structures, (meth)acrylic resins, (meth)acrylamide resins, urethane resins, butyral resins, styryl resins, polyether resins, and polyester resins. etc.
- a resin composition having excellent applicability can be obtained, and a pattern (cured product) having excellent solvent resistance can be obtained.
- a high polymerizable group value having a weight average molecular weight of 20,000 or less for example, the molar amount of the polymerizable group in 1 g of the resin is 1 ⁇ 10 ⁇ 3 mol/g or more
- the coating properties of the resin composition, the solvent resistance of the pattern (cured product), etc. can be improved.
- Other resins can also be added to the resin composition as dispersants for fillers. In such an embodiment, as the other resin, a known filler dispersant can be used without particular limitation.
- the content of the other resins is preferably 0.01% by mass or more, and 0.05% by mass or more, relative to the total solid content of the resin composition. More preferably, it is more preferably 1% by mass or more, even more preferably 2% by mass or more, even more preferably 5% by mass or more, and further preferably 10% by mass or more. More preferred.
- the content of other resins in the resin composition of the present invention is preferably 80% by mass or less, more preferably 75% by mass or less, based on the total solid content of the resin composition. It is more preferably 60% by mass or less, even more preferably 50% by mass or less.
- the content of other resins may be low.
- the content of the other resin is preferably 20% by mass or less, more preferably 15% by mass or less, and 10% by mass or less, relative to the total solid content of the resin composition. is more preferable, 5% by mass or less is even more preferable, and 1% by mass or less is even more preferable.
- the lower limit of the content is not particularly limited as long as it is 0% by mass or more.
- the resin composition of the present invention may contain only one kind of other resin, or may contain two or more kinds thereof. When two or more types are included, the total amount is preferably within the above range.
- the resin composition of the present invention preferably contains a polymerizable compound.
- Polymerizable compounds include radical cross-linking agents or other cross-linking agents.
- the resin composition of the present invention preferably contains a radical cross-linking agent.
- a radical cross-linking agent is a compound having a radically polymerizable group.
- the radically polymerizable group a group containing an ethylenically unsaturated bond is preferred.
- Examples of the group containing an ethylenically unsaturated bond include groups containing an ethylenically unsaturated bond such as a vinyl group, an allyl group, a vinylphenyl group, a (meth)acryloyl group, a maleimide group, and a (meth)acrylamide group.
- the group containing an ethylenically unsaturated bond is preferably a (meth)acryloyl group, a (meth)acrylamide group, or a vinylphenyl group, and more preferably a (meth)acryloyl group from the viewpoint of reactivity.
- the radical cross-linking agent is preferably a compound having one or more ethylenically unsaturated bonds, more preferably a compound having two or more.
- the radical cross-linking agent may have 3 or more ethylenically unsaturated bonds.
- the compound having two or more ethylenically unsaturated bonds is preferably a compound having 2 to 15 ethylenically unsaturated bonds, more preferably a compound having 2 to 10 ethylenically unsaturated bonds, and 2 to 6.
- the resin composition of the present invention contains a compound having two ethylenically unsaturated bonds and a compound having three or more ethylenically unsaturated bonds. It is also preferred to include
- the molecular weight of the radical cross-linking agent is preferably 2,000 or less, more preferably 1,500 or less, and even more preferably 900 or less.
- the lower limit of the molecular weight of the radical cross-linking agent is preferably 100 or more.
- radical cross-linking agent examples include unsaturated carboxylic acids (eg, acrylic acid, methacrylic acid, itaconic acid, crotonic acid, isocrotonic acid, maleic acid, etc.), their esters, and amides. They are esters of saturated carboxylic acids and polyhydric alcohol compounds, and amides of unsaturated carboxylic acids and polyhydric amine compounds.
- addition reaction products of unsaturated carboxylic acid esters or amides having a nucleophilic substituent such as a hydroxy group, an amino group, or a sulfanyl group with monofunctional or polyfunctional isocyanates or epoxies, or monofunctional or polyfunctional is also preferably used.
- addition reaction products of unsaturated carboxylic acid esters or amides having electrophilic substituents such as isocyanate groups and epoxy groups with monofunctional or polyfunctional alcohols, amines, and thiols, and halogeno groups
- substitution reaction products of unsaturated carboxylic acid esters or amides having a leaving substituent such as a tosyloxy group and monofunctional or polyfunctional alcohols, amines, and thiols.
- paragraphs 0113 to 0122 of JP-A-2016-027357 can be referred to, and the contents thereof are incorporated herein.
- the radical cross-linking agent is preferably a compound having a boiling point of 100°C or higher under normal pressure.
- examples include polyethylene glycol di(meth)acrylate, trimethylolethane tri(meth)acrylate, neopentyl glycol di(meth)acrylate, pentaerythritol tri(meth)acrylate, pentaerythritol tetra(meth)acrylate, dipentaerythritol penta(meth)acrylate, dipentaerythritol hexa(meth)acrylate, hexanediol di(meth)acrylate, trimethylolpropane tri(acryloyloxypropyl)ether, tri(acryloyloxyethyl)isocyanurate, glycerin, trimethylolethane, etc.
- polyfunctional (meth)acrylate obtained by reacting polyfunctional carboxylic acid with a compound having a cyclic ether group such as glycidyl (meth)acrylate and an ethylenically unsaturated bond can also be used.
- JP-A-2010-160418, JP-A-2010-129825, JP-A-4364216, etc. have a fluorene ring and an ethylenically unsaturated bond. It is also possible to use compounds having two or more groups and cardo resins.
- JP-B-46-043946 JP-B-01-040337, JP-B-01-040336, and JP-A-02-025493.
- vinyl phosphonic acid compounds and the like can also be mentioned.
- Compounds containing perfluoroalkyl groups described in JP-A-61-022048 can also be used.
- the journal of the Japan Adhesive Association vol. 20, No. 7, pp. 300-308 (1984) as photopolymerizable monomers and oligomers can also be used.
- dipentaerythritol triacrylate (commercially available as KAYARAD D-330 (manufactured by Nippon Kayaku Co., Ltd.)), dipentaerythritol tetraacrylate (commercially available as KAYARAD D-320 (Nippon Kayaku ( Ltd.), A-TMMT (manufactured by Shin-Nakamura Chemical Co., Ltd.), dipentaerythritol penta(meth)acrylate (commercially available as KAYARAD D-310 (manufactured by Nippon Kayaku Co., Ltd.)), dipenta Erythritol hexa(meth)acrylate (commercially available products are KAYARAD DPHA (manufactured by Nippon Kayaku Co., Ltd.) and A-DPH (manufactured by Shin-Nakamura Chemical Co., Ltd.)), and their (meth)acryloyl groups are ethylene glycol,
- radical cross-linking agents examples include SR-494, a tetrafunctional acrylate having four ethyleneoxy chains, manufactured by Sartomer, SR-209, a bifunctional methacrylate having four ethyleneoxy chains, manufactured by Sartomer. 231, 239, Nippon Kayaku Co., Ltd.
- DPCA-60 a hexafunctional acrylate having 6 pentyleneoxy chains, TPA-330, a trifunctional acrylate having 3 isobutyleneoxy chains, urethane oligomer UAS-10 , UAB-140 (manufactured by Nippon Paper Industries), NK Ester M-40G, NK Ester 4G, NK Ester M-9300, NK Ester A-9300, UA-7200 (manufactured by Shin-Nakamura Chemical Co., Ltd.), DPHA-40H (Japan Kayaku Co., Ltd.), UA-306H, UA-306T, UA-306I, AH-600, T-600, AI-600 (manufactured by Kyoeisha Chemical Co., Ltd.), Blenmer PME400 (manufactured by NOF Corporation) etc.
- radical cross-linking agents examples include urethane acrylates such as those described in JP-B-48-041708, JP-A-51-037193, JP-B-02-032293, JP-B-02-016765, Urethane compounds having an ethylene oxide skeleton described in JP-B-58-049860, JP-B-56-017654, JP-B-62-039417 and JP-B-62-039418 are also suitable.
- compounds having an amino structure or a sulfide structure in the molecule described in JP-A-63-277653, JP-A-63-260909, and JP-A-01-105238 are used. can also
- the radical cross-linking agent may be a radical cross-linking agent having an acid group such as a carboxy group or a phosphoric acid group.
- a radical cross-linking agent having an acid group is preferably an ester of an aliphatic polyhydroxy compound and an unsaturated carboxylic acid. is more preferable.
- the aliphatic polyhydroxy compound is pentaerythritol or dipentaerythritol is a compound.
- Examples of commercially available products include polybasic acid-modified acrylic oligomers manufactured by Toagosei Co., Ltd. such as M-510 and M-520.
- the acid value of the radical cross-linking agent having an acid group is preferably 0.1-300 mgKOH/g, particularly preferably 1-100 mgKOH/g. If the acid value of the radical cross-linking agent is within the above range, the handleability in production is excellent, and furthermore the developability is excellent. Moreover, the polymerizability is good. The acid value is measured according to JIS K 0070:1992.
- the resin composition preferably uses a bifunctional methacrylate or acrylate.
- Specific compounds include triethylene glycol diacrylate, triethylene glycol dimethacrylate, tetraethylene glycol dimethacrylate, tetraethylene glycol diacrylate, PEG (polyethylene glycol) 200 diacrylate, PEG200 dimethacrylate, PEG600 diacrylate, and PEG600 diacrylate.
- PEG200 diacrylate is a polyethylene glycol diacrylate having a polyethylene glycol chain formula weight of about 200.
- a monofunctional radical cross-linking agent can be preferably used as the radical cross-linking agent from the viewpoint of suppressing warpage associated with the elastic modulus control of the pattern (cured product).
- Monofunctional radical cross-linking agents include n-butyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, 2-hydroxyethyl (meth)acrylate, butoxyethyl (meth)acrylate, carbitol (meth)acrylate, cyclohexyl (meth)acrylate, ) acrylate, benzyl (meth) acrylate, phenoxyethyl (meth) acrylate, N-methylol (meth) acrylamide, glycidyl (meth) acrylate, polyethylene glycol mono (meth) acrylate, polypropylene glycol mono (meth) acrylate, etc.
- N-vinyl compounds such as N-vinylpyrrolidone and N-vinylcaprolactam
- allyl glycidyl ether are preferably used.
- the monofunctional radical cross-linking agent a compound having a boiling point of 100° C. or higher under normal pressure is also preferable in order to suppress volatilization before exposure.
- Other di- or higher functional radical cross-linking agents include allyl compounds such as diallyl phthalate and triallyl trimellitate.
- a radical cross-linking agent When a radical cross-linking agent is contained, its content is preferably more than 0% by mass and 60% by mass or less with respect to the total solid content of the resin composition of the present invention. More preferably, the lower limit is 5% by mass or more. The upper limit is more preferably 50% by mass or less, and even more preferably 30% by mass or less.
- a single radical cross-linking agent may be used alone, or two or more may be used in combination. When two or more are used in combination, the total amount is preferably within the above range.
- the resin composition of the present invention contains another cross-linking agent different from the radical cross-linking agent described above.
- the other cross-linking agent refers to a cross-linking agent other than the above-described radical cross-linking agent, and the above-described photoacid generator or photobase generator reacts with other compounds in the composition or reacts with them.
- the compound has a plurality of groups in the molecule that promote the reaction forming covalent bonds with the product, and covalent bonds are formed with other compounds in the composition or reaction products thereof. Compounds having a plurality of groups in the molecule, the reaction of which is promoted by the action of an acid or base, are preferred.
- the acid or base is preferably an acid or base generated from a photoacid generator or a photobase generator in the exposure step.
- compounds having at least one group selected from the group consisting of acyloxymethyl groups, methylol groups and alkoxymethyl groups are preferred, and the compounds are preferably selected from the group consisting of acyloxymethyl groups, methylol groups and alkoxymethyl groups. More preferred is a compound having a structure in which at least one group is directly bonded to a nitrogen atom.
- cross-linking agents include, for example, an amino group-containing compound such as melamine, glycoluril, urea, alkylene urea, and benzoguanamine, which is reacted with formaldehyde or formaldehyde and alcohol, and the hydrogen atom of the amino group is converted to an acyloxymethyl group, methylol group, or A compound having a structure substituted with an alkoxymethyl group can be mentioned.
- the method for producing these compounds is not particularly limited as long as they have the same structure as the compounds produced by the above methods. Oligomers formed by self-condensation of methylol groups of these compounds may also be used.
- a melamine-based crosslinking agent is a melamine-based crosslinking agent
- a glycoluril, urea or alkyleneurea-based crosslinking agent is a urea-based crosslinking agent
- an alkyleneurea-based crosslinking agent is an alkyleneurea-based crosslinking agent.
- a cross-linking agent using benzoguanamine is called a benzoguanamine-based cross-linking agent.
- the resin composition of the present invention preferably contains at least one compound selected from the group consisting of urea-based cross-linking agents and melamine-based cross-linking agents. More preferably, it contains at least one compound selected from the group consisting of agents.
- an alkoxymethyl group or an acyloxymethyl group is directly substituted on the nitrogen atom of an aromatic group or the following urea structure, or on a triazine.
- the alkoxymethyl group or acyloxymethyl group of the above compound preferably has 2 to 5 carbon atoms, preferably 2 or 3 carbon atoms, and more preferably 2 carbon atoms.
- the total number of alkoxymethyl groups and acyloxymethyl groups in the above compound is preferably 1-10, more preferably 2-8, and particularly preferably 3-6.
- the molecular weight of the compound is preferably 1500 or less, preferably 180-1200.
- R 100 represents an alkyl group or an acyl group.
- R 101 and R 102 each independently represent a monovalent organic group and may combine with each other to form a ring.
- Examples of compounds in which an alkoxymethyl group or an acyloxymethyl group is directly substituted by an aromatic group include compounds represented by the following general formula.
- X represents a single bond or a divalent organic group
- each R 104 independently represents an alkyl group or an acyl group
- R 103 represents a hydrogen atom, an alkyl group, an alkenyl group, an aryl group, an aralkyl group , or a group that decomposes under the action of an acid to produce an alkali-soluble group (e.g., a group that leaves under the action of an acid, a group represented by —C(R 4 ) 2 COOR 5 (R 4 is independently It represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms, and R 5 represents a group that leaves under the action of an acid.)).
- R 105 each independently represents an alkyl group or alkenyl group, a, b and c are each independently 1 to 3, d is 0 to 4, e is 0 to 3, f is 0 to 3 , a+d is 5 or less, b+e is 4 or less, and c+f is 4 or less.
- R 5 in the group represented by —C(R 4 ) 2 COOR 5 a group that is decomposed by the action of an acid to produce an alkali-soluble group, a group that is eliminated by the action of an acid, and —C(R 36 )(R 37 )(R 38 ), —C(R 36 )(R 37 )(OR 39 ), —C(R 01 )(R 02 )(OR 39 ), and the like.
- R 36 to R 39 each independently represent an alkyl group, cycloalkyl group, aryl group, aralkyl group or alkenyl group.
- R 36 and R 37 may combine with each other to form a ring.
- alkyl group an alkyl group having 1 to 10 carbon atoms is preferable, and an alkyl group having 1 to 5 carbon atoms is more preferable.
- the alkyl group may be linear or branched.
- a cycloalkyl group having 3 to 12 carbon atoms is preferable, and a cycloalkyl group having 3 to 8 carbon atoms is more preferable.
- the cycloalkyl group may have a monocyclic structure or a polycyclic structure such as a condensed ring.
- the aryl group is preferably an aromatic hydrocarbon group having 6 to 30 carbon atoms, more preferably a phenyl group.
- an aralkyl group having 7 to 20 carbon atoms is preferable, and an aralkyl group having 7 to 16 carbon atoms is more preferable.
- the aralkyl group is intended to be an aryl group substituted with an alkyl group, and preferred embodiments of these alkyl and aryl groups are the same as the preferred embodiments of the alkyl and aryl groups described above.
- the alkenyl group is preferably an alkenyl group having 3 to 20 carbon atoms, more preferably an alkenyl group having 3 to 16 carbon atoms. Moreover, these groups may further have a known substituent within the range in which the effects of the present invention can be obtained.
- R 01 and R 02 each independently represent a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group, an aralkyl group or an alkenyl group.
- the group that is decomposed by the action of an acid to form an alkali-soluble group or the group that is eliminated by the action of an acid is preferably a tertiary alkyl ester group, an acetal group, a cumyl ester group, an enol ester group, or the like. More preferred are tertiary alkyl ester groups and acetal groups.
- compounds having an alkoxymethyl group include the following structures.
- Examples of the compound having an acyloxymethyl group include compounds obtained by changing the alkoxymethyl group of the following compounds to an acyloxymethyl group.
- Compounds having an alkoxymethyl group or acyloxymethyl in the molecule include, but are not limited to, the following compounds.
- the compound containing at least one of an alkoxymethyl group and an acyloxymethyl group a commercially available one or a compound synthesized by a known method may be used. From the viewpoint of heat resistance, compounds in which an alkoxymethyl group or acyloxymethyl group is directly substituted on an aromatic ring or a triazine ring are preferred.
- melamine-based cross-linking agents include hexamethoxymethylmelamine, hexaethoxymethylmelamine, hexapropoxymethylmelamine, and hexabutoxybutylmelamine.
- urea-based cross-linking agents include monohydroxymethylated glycoluril, dihydroxymethylated glycoluril, trihydroxymethylated glycoluril, tetrahydroxymethylated glycoluril, monomethoxymethylated glycoluril, and dimethoxymethylated glycol.
- Uril trimethoxymethylated glycoluril, tetramethoxymethylated glycoluril, monoethoxymethylated glycoluril, diethoxymethylated glycoluril, triethoxymethylated glycoluril, tetraethoxymethylated glycoluril, monopropoxymethylated glycoluril , dipropoxymethylated glycoluril, tripropoxymethylated glycoluril, tetrapropoxymethylated glycoluril, monobutoxymethylated glycoluril, dibutoxymethylated glycoluril, tributoxymethylated glycoluril, or tetrabutoxymethylated glycoluril glycoluril-based crosslinkers such as uril; urea-based cross-linking agents such as bismethoxymethylurea, bisethoxymethylurea, bispropoxymethylurea, and bisbutoxymethylurea; monohydroxymethylated ethyleneurea or dihydroxymethylated ethyleneurea, monomethoxymethylated ethyleneurea, dimethoxymethylated
- benzoguanamine-based cross-linking agents include monohydroxymethylated benzoguanamine, dihydroxymethylated benzoguanamine, trihydroxymethylated benzoguanamine, tetrahydroxymethylated benzoguanamine, monomethoxymethylated benzoguanamine, dimethoxymethylated benzoguanamine, and trimethoxymethylated benzoguanamine.
- tetramethoxymethylated benzoguanamine monoethoxymethylated benzoguanamine, diethoxymethylated benzoguanamine, triethoxymethylated benzoguanamine, tetraethoxymethylated benzoguanamine, monopropoxymethylated benzoguanamine, dipropoxymethylated benzoguanamine, tripropoxymethylated benzoguanamine, tetra propoxymethylated benzoguanamine, monobutoxymethylated benzoguanamine, dibutoxymethylated benzoguanamine, tributoxymethylated benzoguanamine, tetrabutoxymethylated benzoguanamine, and the like.
- the compound having at least one group selected from the group consisting of a methylol group and an alkoxymethyl group includes at least one group selected from the group consisting of a methylol group and an alkoxymethyl group on an aromatic ring (preferably a benzene ring).
- Compounds to which a seed group is directly attached are also preferably used. Specific examples of such compounds include benzenedimethanol, bis(hydroxymethyl)cresol, bis(hydroxymethyl)dimethoxybenzene, bis(hydroxymethyl)diphenyl ether, bis(hydroxymethyl)benzophenone, hydroxymethylphenyl hydroxymethylbenzoate.
- suitable commercial products include 46DMOC, 46DMOEP (manufactured by Asahi Organic Chemicals Industry Co., Ltd.), DML-PC, DML-PEP, DML-OC, and DML-OEP.
- DML-34X DML-PTBP, DML-PCHP, DML-OCHP, DML-PFP, DML-PSBP, DML-POP, DML-MBOC, DML-MBPC, DML-MTrisPC, DML-BisOC-Z, DML-BisOCHP -Z, DML-BPC, DMLBisOC-P, DMOM-PC, DMOM-PTBP, DMOM-MBPC, TriML-P, TriML-35XL, TML-HQ, TML-BP, TML-pp-BPF, TML-BPE, TML -BPA, TML-BPAF, TML-BPAP, TMOM-BP, TMOM-BPE, TMOM-BPA, TMOM-BPAF, TMOM-BPAP, HML-TPPHBA, HML-TPHAP, HMOM-TPPHBA, HMOM-TPHAP (Honshu Chemical Industry Co., Ltd.), Nikalac (registered
- the resin composition of the present invention preferably contains at least one compound selected from the group consisting of epoxy compounds, oxetane compounds, and benzoxazine compounds as another cross-linking agent.
- Epoxy compound (compound having an epoxy group) -
- the epoxy compound is preferably a compound having two or more epoxy groups in one molecule.
- the epoxy group undergoes a cross-linking reaction at 200° C. or less and does not undergo a dehydration reaction resulting from the cross-linking, so film shrinkage does not easily occur. Therefore, containing an epoxy compound is effective for low-temperature curing and suppression of warpage of the resin composition of the present invention.
- the epoxy compound preferably contains a polyethylene oxide group.
- the polyethylene oxide group means that the number of repeating units of ethylene oxide is 2 or more, and the number of repeating units is preferably 2-15.
- epoxy compounds include bisphenol A type epoxy resin; bisphenol F type epoxy resin; propylene glycol diglycidyl ether, neopentyl glycol diglycidyl ether, ethylene glycol diglycidyl ether, butylene glycol diglycidyl ether, hexamethylene glycol diglycidyl ether.
- alkylene glycol type epoxy resins such as trimethylolpropane triglycidyl ether or polyhydric alcohol hydrocarbon type epoxy resins
- polyalkylene glycol type epoxy resins such as polypropylene glycol diglycidyl ether
- epoxy groups such as polymethyl (glycidyloxypropyl) siloxane Examples include, but are not limited to, containing silicones and the like.
- Epiclon (registered trademark) 850-S Epiclon (registered trademark) HP-4032, Epiclon (registered trademark) HP-7200, Epiclon (registered trademark) HP-820, Epiclon (registered trademark) HP-4700, Epiclon (registered trademark) HP-4770, Epiclon (registered trademark) EXA-830LVP, Epiclon (registered trademark) EXA-8183, Epiclon (registered trademark) EXA-8169, Epiclon (registered trademark) N-660, Epiclon (registered trademark) N-665-EXP-S, Epiclon (registered trademark) N-740 (trade name, manufactured by DIC Corporation), Ricaresin (registered trademark) BEO-20E, Jamaicaresin (registered trademark) BEO-60E, Ricaresin (registered trademark) ) HBE-100, Ricaresin (registered trademark) DME-100, Ricaresin (registered trademark)
- n is an integer of 1-5 and m is an integer of 1-20.
- n 1 to 2 and m is 3 to 7 from the viewpoint of achieving both heat resistance and elongation improvement.
- oxetane compounds include compounds having two or more oxetane rings in one molecule, 3-ethyl-3-hydroxymethyloxetane, 1,4-bis ⁇ [(3-ethyl-3-oxetanyl)methoxy]methyl ⁇ benzene, 3-ethyl-3-(2-ethylhexylmethyl)oxetane, 1,4-benzenedicarboxylic acid-bis[(3-ethyl-3-oxetanyl)methyl]ester and the like can be mentioned.
- Aron oxetane series manufactured by Toagosei Co., Ltd. eg, OXT-121, OXT-221
- OXT-121, OXT-221 can be suitably used, and these can be used alone or in combination of two or more. good.
- a benzoxazine compound (compound having a benzoxazolyl group)-
- a benzoxazine compound is preferable because it is a cross-linking reaction derived from a ring-opening addition reaction, so that degassing does not occur during curing, and thermal shrinkage is reduced to suppress the occurrence of warping.
- benzoxazine compounds include Pd-type benzoxazine, Fa-type benzoxazine (these are trade names, manufactured by Shikoku Kasei Kogyo Co., Ltd.), benzoxazine adducts of polyhydroxystyrene resins, phenol novolac-type dihydrobenzoxazines, oxazine compounds. These may be used alone or in combination of two or more.
- the content of the other cross-linking agent is preferably 0.1 to 30% by mass, more preferably 0.1 to 20% by mass, more preferably 0.1 to 20% by mass, based on the total solid content of the resin composition of the present invention. It is more preferably 5 to 15% by mass, particularly preferably 1.0 to 10% by mass.
- Other cross-linking agents may be contained alone, or may be contained in two or more. When two or more other cross-linking agents are contained, the total is preferably within the above range.
- the resin composition of the present invention preferably contains a polymerization initiator capable of initiating polymerization by light and/or heat. In particular, it preferably contains a photopolymerization initiator.
- the photopolymerization initiator is preferably a photoradical polymerization initiator.
- the radical photopolymerization initiator is not particularly limited and can be appropriately selected from known radical photopolymerization initiators. For example, a photoradical polymerization initiator having photosensitivity to light in the ultraviolet region to the visible region is preferred. It may also be an activator that produces an active radical by producing some action with a photoexcited sensitizer.
- the radical photopolymerization initiator contains at least one compound having a molar extinction coefficient of at least about 50 L ⁇ mol ⁇ 1 ⁇ cm ⁇ 1 within the wavelength range of about 240 to 800 nm (preferably 330 to 500 nm). is preferred.
- the molar extinction coefficient of a compound can be measured using known methods. For example, it is preferable to measure with an ultraviolet-visible spectrophotometer (Cary-5 spectrophotometer manufactured by Varian) using an ethyl acetate solvent at a concentration of 0.01 g/L.
- any known compound can be used as the photoradical polymerization initiator.
- halogenated hydrocarbon derivatives e.g., compounds having a triazine skeleton, compounds having an oxadiazole skeleton, compounds having a trihalomethyl group, etc.
- acylphosphine compounds such as acylphosphine oxide, hexaarylbiimidazole, oxime derivatives, etc.
- ketone compounds include compounds described in paragraph 0087 of JP-A-2015-087611, the content of which is incorporated herein.
- Kayacure-DETX-S manufactured by Nippon Kayaku Co., Ltd. is also suitably used.
- a hydroxyacetophenone compound, an aminoacetophenone compound, and an acylphosphine compound can be suitably used as the radical photopolymerization initiator. More specifically, for example, aminoacetophenone-based initiators described in JP-A-10-291969 and acylphosphine oxide-based initiators described in Japanese Patent No. 4225898 can be used. incorporated.
- ⁇ -hydroxyketone initiators include Omnirad 184, Omnirad 1173, Omnirad 2959, Omnirad 127 (manufactured by IGM Resins B.V.), IRGACURE 184 (IRGACURE is a registered trademark), DAROCUR 1173, IRGACURE 500, IRGACURE -2959 and IRGACURE 127 (trade names: both manufactured by BASF) can be used.
- ⁇ -aminoketone initiators examples include Omnirad 907, Omnirad 369, Omnirad 369E, Omnirad 379EG (manufactured by IGM Resins B.V.), IRGACURE 907, IRGACURE 369, and IRGACURE 379 (trade names: all BASF company) can be used.
- the compound described in JP-A-2009-191179 whose maximum absorption wavelength is matched to a wavelength light source such as 365 nm or 405 nm can also be used, the content of which is incorporated herein.
- Acylphosphine oxide initiators include 2,4,6-trimethylbenzoyl-diphenyl-phosphine oxide.
- Omnirad 819, Omnirad TPO (manufactured by IGM Resins B.V.), IRGACURE-819 and IRGACURE-TPO (trade names: all manufactured by BASF) can also be used.
- metallocene compounds examples include IRGACURE-784, IRGACURE-784EG (both manufactured by BASF) and Keycure VIS 813 (manufactured by King Brother Chem).
- the photoradical polymerization initiator is more preferably an oxime compound.
- an oxime compound By using an oxime compound, the exposure latitude can be improved more effectively.
- Oxime compounds are particularly preferred because they have a wide exposure latitude (exposure margin) and also act as photocuring accelerators.
- oxime compound examples include compounds described in JP-A-2001-233842, compounds described in JP-A-2000-080068, compounds described in JP-A-2006-342166, J. Am. C. S. Compounds described in Perkin II (1979, pp.1653-1660); C. S. Compounds described in Perkin II (1979, pp.156-162), compounds described in Journal of Photopolymer Science and Technology (1995, pp.202-232), compounds described in JP-A-2000-066385, Compounds described in JP-A-2004-534797, compounds described in JP-A-2017-019766, compounds described in Patent No.
- Preferred oxime compounds include, for example, compounds having the following structures, 3-(benzoyloxy(imino))butan-2-one, 3-(acetoxy(imino))butan-2-one, 3-(propionyloxy( imino))butan-2-one, 2-(acetoxy(imino))pentan-3-one, 2-(acetoxy(imino))-1-phenylpropan-1-one, 2-(benzoyloxy(imino)) -1-phenylpropan-1-one, 3-((4-toluenesulfonyloxy)imino)butan-2-one, and 2-(ethoxycarbonyloxy(imino))-1-phenylpropan-1-one, etc.
- an oxime compound an oxime-based radical photopolymerization initiator
- DFI-091 manufactured by Daito Chemix Co., Ltd.
- SpeedCure PDO manufactured by SARTOMER ARKEMA
- an oxime compound having the following structure can be used.
- An oxime compound having a fluorene ring can also be used as the photoradical polymerization initiator.
- Specific examples of the oxime compound having a fluorene ring include compounds described in JP-A-2014-137466 and compounds described in Japanese Patent No. 06636081, the contents of which are incorporated herein.
- an oxime compound having a skeleton in which at least one benzene ring of the carbazole ring is a naphthalene ring can also be used.
- Specific examples of such oxime compounds include compounds described in WO2013/083505, the contents of which are incorporated herein.
- oxime compound having a fluorine atom examples include compounds described in JP-A-2010-262028, compounds 24, 36-40 described in paragraph 0345 of JP-A-2014-500852, and JP-A-2013. and compound (C-3) described in paragraph 0101 of JP-A-164471, the contents of which are incorporated herein.
- An oxime compound having a nitro group can be used as the photopolymerization initiator.
- the oxime compound having a nitro group is also preferably a dimer.
- Specific examples of the oxime compound having a nitro group include the compounds described in paragraph numbers 0031 to 0047 of JP-A-2013-114249 and paragraph numbers 0008-0012 and 0070-0079 of JP-A-2014-137466; Included are compounds described in paragraphs 0007-0025 of Japanese Patent No. 4223071, the contents of which are incorporated herein.
- the oxime compound having a nitro group also includes ADEKA Arkles NCI-831 (manufactured by ADEKA Co., Ltd.).
- An oxime compound having a benzofuran skeleton can also be used as the photoradical polymerization initiator.
- Specific examples include OE-01 to OE-75 described in WO 2015/036910.
- an oxime compound in which a substituent having a hydroxy group is bonded to the carbazole skeleton can also be used.
- photoinitiators include compounds such as those described in WO2019/088055, the contents of which are incorporated herein.
- an oxime compound having an aromatic ring group Ar 2 OX1 in which an electron-withdrawing group is introduced into the aromatic ring (hereinafter also referred to as oxime compound OX) can be used.
- the electron-withdrawing group of the aromatic ring group Ar OX1 include an acyl group, a nitro group, a trifluoromethyl group, an alkylsulfinyl group, an arylsulfinyl group, an alkylsulfonyl group, an arylsulfonyl group, and a cyano group.
- a benzoyl group may have a substituent.
- substituents include halogen atoms, cyano groups, nitro groups, hydroxy groups, alkyl groups, alkoxy groups, aryl groups, aryloxy groups, heterocyclic groups, heterocyclic oxy groups, alkenyl groups, alkylsulfanyl groups, arylsulfanyl groups, It is preferably an acyl group or an amino group, more preferably an alkyl group, an alkoxy group, an aryl group, an aryloxy group, a heterocyclic oxy group, an alkylsulfanyl group, an arylsulfanyl group or an amino group.
- a sulfanyl group or an amino group is more preferred.
- the oxime compound OX is preferably at least one selected from the compounds represented by the formula (OX1) and the compounds represented by the formula (OX2), more preferably the compound represented by the formula (OX2). preferable.
- R X1 is an alkyl group, alkenyl group, alkoxy group, aryl group, aryloxy group, heterocyclic group, heterocyclicoxy group, alkylsulfanyl group, arylsulfanyl group, alkylsulfinyl group, arylsulfinyl group, alkylsulfonyl a group, an arylsulfonyl group, an acyl group, an acyloxy group, an amino group, a phosphinoyl group, a carbamoyl group or a sulfamoyl group
- R X2 is an alkyl group, alkenyl group, alkoxy group, aryl group, aryloxy group, heterocyclic group,
- R X12 is an electron-withdrawing group
- R X10 , R X11 , R X13 and R X14 are preferably hydrogen atoms.
- oxime compound OX examples include compounds described in paragraphs 0083 to 0105 of Japanese Patent No. 4600600, the contents of which are incorporated herein.
- oxime compounds having specific substituents shown in JP-A-2007-269779 and oxime compounds having a thioaryl group shown in JP-A-2009-191061. incorporated herein.
- photoradical polymerization initiators include trihalomethyltriazine compounds, benzyldimethylketal compounds, ⁇ -hydroxyketone compounds, ⁇ -aminoketone compounds, acylphosphine compounds, phosphine oxide compounds, metallocene compounds, oxime compounds, triaryl selected from the group consisting of imidazole dimers, onium salt compounds, benzothiazole compounds, benzophenone compounds, acetophenone compounds and derivatives thereof, cyclopentadiene-benzene-iron complexes and salts thereof, halomethyloxadiazole compounds, and 3-aryl-substituted coumarin compounds; are preferred.
- More preferred radical photopolymerization initiators are trihalomethyltriazine compounds, ⁇ -aminoketone compounds, acylphosphine compounds, phosphine oxide compounds, metallocene compounds, oxime compounds, triarylimidazole dimers, onium salt compounds, benzophenone compounds, and acetophenone compounds.
- At least one compound selected from the group consisting of trihalomethyltriazine compounds, ⁇ -aminoketone compounds, metallocene compounds, oxime compounds, triarylimidazole dimers, and benzophenone compounds is more preferred, and metallocene compounds or oxime compounds are even more preferred. .
- the photoradical polymerization initiator includes benzophenone, N,N'-tetraalkyl-4,4'-diaminobenzophenone such as N,N'-tetramethyl-4,4'-diaminobenzophenone (Michler's ketone), 2-benzyl -aromatic ketones such as 2-dimethylamino-1-(4-morpholinophenyl)-butanone-1,2-methyl-1-[4-(methylthio)phenyl]-2-morpholino-propanone-1, alkylanthraquinones, etc.
- benzophenone N,N'-tetraalkyl-4,4'-diaminobenzophenone
- 2-benzyl -aromatic ketones such as 2-dimethylamino-1-(4-morpholinophenyl)-butanone-1,2-methyl-1-[4-(methylthio)phenyl]-2-morpholino-propanone-1, alkylanthr
- benzoin ether compounds such as benzoin alkyl ether
- benzoin compounds such as benzoin and alkylbenzoin
- benzyl derivatives such as benzyl dimethyl ketal
- a compound represented by the following formula (I) can also be used.
- R 100 is an alkyl group having 1 to 20 carbon atoms, an alkyl group having 2 to 20 carbon atoms interrupted by one or more oxygen atoms, an alkoxy group having 1 to 12 carbon atoms, a phenyl group, Alternatively, an alkyl group having 1 to 20 carbon atoms, an alkoxy group having 1 to 12 carbon atoms, a halogen atom, a cyclopentyl group, a cyclohexyl group, an alkenyl group having 2 to 12 carbon atoms, a carbon number interrupted by one or more oxygen atoms a phenyl group or a biphenyl group substituted with at least one of an alkyl group having 2 to 18 carbon atoms and an alkyl group having 1 to 4 carbon atoms, and R I01 is a group represented by formula (II); R 102 to R 104 are each independently an alkyl group having 1 to 12 carbon atoms, an alkoxy group having 1 to 12 carbon atoms, an
- R 105 to R 107 are the same as R 102 to R 104 in formula (I) above.
- radical photopolymerization initiator a difunctional or trifunctional or higher radical photopolymerization initiator may be used.
- a radical photopolymerization initiator two or more radicals are generated from one molecule of the radical photopolymerization initiator, so good sensitivity can be obtained.
- the crystallinity is lowered, the solubility in a solvent or the like is improved, and precipitation becomes difficult over time, and the stability over time of the resin composition can be improved.
- Specific examples of bifunctional or trifunctional or higher photoradical polymerization initiators include Japanese Patent Publication No. 2010-527339, Japanese Patent Publication No. 2011-524436, International Publication No.
- a photopolymerization initiator When a photopolymerization initiator is included, its content is preferably 0.1 to 30% by mass, more preferably 0.1 to 20% by mass, based on the total solid content of the resin composition of the present invention. , more preferably 0.5 to 15% by mass, and still more preferably 1.0 to 10% by mass. Only one type of photopolymerization initiator may be contained, or two or more types may be contained. When two or more photopolymerization initiators are contained, the total amount is preferably within the above range. In addition, since the photopolymerization initiator may also function as a thermal polymerization initiator, the crosslinking by the photopolymerization initiator may be further advanced by heating with an oven, a hot plate, or the like.
- the resin composition according to the present invention preferably also contains a thermal polymerization initiator.
- the thermal polymerization initiator can be selected depending on the type of polymerizable compound, but a thermal radical polymerization initiator is preferred.
- a thermal radical polymerization initiator is a compound that generates radicals by thermal energy and initiates or promotes a polymerization reaction of a polymerizable compound.
- the photopolymerization initiator described above may also have a function of initiating polymerization by heat, and may be added as a thermal polymerization initiator.
- thermal polymerization initiators include known azo compounds and known peroxide compounds.
- azo-based compounds include azobis-based compounds.
- the azo compound may be a compound having a cyano group or a compound having no cyano group.
- Peroxide compounds include ketone peroxides, peroxyketals, hydroperoxides, dialkyl peroxides, diacyl peroxides, peroxydicarbonates, peroxyesters, and the like.
- thermal polymerization initiator such as V-40, V-601, and VF-096 manufactured by Fuji Film Wako Pure Chemical Industries, Ltd., perhexyl O manufactured by NOF Corporation, per Hexyl D, Perhexyl I, Perhexa 25O, Perhexa 25Z, Percmyl D, Percmyl D-40, Percmyl D-40MB, Percmyl H, Percmyl P, Percmyl ND and the like.
- specific examples of thermal radical polymerization initiators include compounds described in paragraphs 0074 to 0118 of JP-A-2008-063554, the contents of which are incorporated herein.
- the content of the thermal polymerization initiator in the resin composition is preferably 0.05% by mass or more and 10% by mass or less, more preferably 0.1% by mass or more and 10% by mass or less, relative to the total solid content of the composition. , more preferably 0.1% by mass or more and 5% by mass or less, and particularly preferably 0.5% by mass or more and 3% by mass or less.
- the resin composition (particularly, the second resin composition) may contain one type of thermal polymerization initiator alone, or two or more types thereof. When two or more types are included, the total amount is preferably within the above range.
- the resin composition may contain a sensitizer.
- a sensitizer absorbs specific actinic radiation and enters an electronically excited state.
- the sensitizer in an electronically excited state comes into contact with a thermal radical polymerization initiator, a photoradical polymerization initiator, or the like, and causes electron transfer, energy transfer, heat generation, or the like.
- the thermal radical polymerization initiator and the photoradical polymerization initiator undergo chemical changes and are decomposed to generate radicals, acids or bases.
- Usable sensitizers include benzophenones, Michler's ketones, coumarins, pyrazole azos, anilinoazos, triphenylmethanes, anthraquinones, anthracenes, anthrapyridones, benzylidenes, oxonols, and pyrazolotriazole azos. , pyridone azo, cyanine, phenothiazine, pyrrolopyrazole azomethine, xanthene, phthalocyanine, benzopyran, and indigo compounds.
- Sensitizers include, for example, Michler's ketone, 4,4'-bis(diethylamino)benzophenone, 2,5-bis(4'-diethylaminobenzal)cyclopentane, 2,6-bis(4'-diethylaminobenzal) Cyclohexanone, 2,6-bis(4'-diethylaminobenzal)-4-methylcyclohexanone, 4,4'-bis(dimethylamino)chalcone, 4,4'-bis(diethylamino)chalcone, p-dimethylaminocinnamyl denindanone, p-dimethylaminobenzylideneindanone, 2-(p-dimethylaminophenylbiphenylene)-benzothiazole, 2-(p-dimethylaminophenylvinylene)benzothiazole, 2-(p-dimethylaminophenylvinylene)iso naphthothiazole,
- the content of the sensitizer is preferably 0.01 to 20% by mass, preferably 0.1 to 15% by mass, based on the total solid content of the resin composition. more preferably 0.5 to 10% by mass.
- the sensitizers may be used singly or in combination of two or more.
- the resin composition of the present invention may contain a chain transfer agent.
- the chain transfer agent is defined, for example, in Kobunshi Dictionary, 3rd edition (edited by Kobunshi Gakkai, 2005), pp. 683-684.
- Chain transfer agents include, for example, a group of compounds having —S—S—, —SO 2 —S—, —NO—, SH, PH, SiH, and GeH in the molecule, RAFT (Reversible Addition Fragmentation Chain Transfer )
- Dithiobenzoate, trithiocarbonate, dithiocarbamate, xanthate compounds and the like having a thiocarbonylthio group used for polymerization are used. They can either donate hydrogen to less active radicals to generate radicals, or they can be oxidized and then deprotonated to generate radicals.
- thiol compounds can be preferably used.
- chain transfer agent can also use the compounds described in paragraphs 0152 to 0153 of International Publication No. 2015/199219, the contents of which are incorporated herein.
- the content of the chain transfer agent is preferably 0.01 to 20 parts by mass, preferably 0.01 to 20 parts by mass, based on 100 parts by mass of the total solid content of the resin composition of the present invention. 1 to 10 parts by mass is more preferable, and 0.5 to 5 parts by mass is even more preferable.
- One type of chain transfer agent may be used, or two or more types may be used. When two or more chain transfer agents are used, the total is preferably within the above range.
- the resin composition of the present invention preferably contains a photoacid generator.
- a photoacid generator is a compound that generates at least one of Bronsted acid and Lewis acid upon irradiation with light of 200 nm to 900 nm.
- the light to be irradiated is preferably light with a wavelength of 300 nm to 450 nm, more preferably light with a wavelength of 330 nm to 420 nm.
- the photoacid generator is preferably a photoacid generator capable of generating an acid upon exposure.
- generated acids include hydrogen halides, carboxylic acids, sulfonic acids, sulfinic acids, thiosulfinic acids, phosphoric acid, phosphoric monoesters, phosphoric diesters, boron derivatives, phosphorus derivatives, antimony derivatives, halogen peroxides, Sulfonamide and the like are preferred.
- Examples of the photoacid generator used in the resin composition of the present invention include quinone diazide compounds, oxime sulfonate compounds, organic halogenated compounds, organic borate compounds, disulfone compounds, and onium salt compounds.
- Organic halogen compounds, oxime sulfonate compounds, and onium salt compounds are preferred from the viewpoint of sensitivity and storage stability, and oxime esters are preferred from the viewpoint of the mechanical properties of the film to be formed.
- quinonediazide compounds include monovalent or polyvalent hydroxy compounds in which quinonediazide sulfonic acids are ester-bonded, monovalent or polyvalent amino compounds in which quinonediazide sulfonic acids are sulfonamide-bonded, and polyhydroxypolyamino compounds with quinonediazide. and/or sulfonic acid having an ester bond and/or a sulfonamide bond.
- hydroxy compounds include phenol, trihydroxybenzophenone, 4-methoxyphenol, isopropanol, octanol, t-Bu alcohol, cyclohexanol, naphthol, Bis-Z, BisP-EZ, TekP-4HBPA, TrisP-HAP, TrisP- PA, TrisP-SA, TrisOCR-PA, BisOCHP-Z, BisP-MZ, BisP-PZ, BisP-IPZ, BisOCP-IPZ, BisP-CP, BisRS-2P, BisRS-3P, BisP-OCHP, methylene tris-FR -CR, BisRS-26X, DML-MBPC, DML-MBOC, DML-OCHP, DML-PCHP, DML-PC, DML-PTBP, DML-34X, DML-EP, DML-POP, Dimethylol-BisOC-P, DML -PFP, DML-PSBP, DML-MTrisPC, TriML
- amino compounds include aniline, methylaniline, diethylamine, butylamine, 1,4-phenylenediamine, 1,3-phenylenediamine, 4,4′-diaminodiphenyl ether, 4,4′-diaminodiphenylmethane, 4,4 '-diaminodiphenyl sulfone, 4,4'-diaminodiphenyl sulfide, and the like, but are not limited thereto.
- polyhydroxypolyamino compounds include 2,2-bis(3-amino-4-hydroxyphenyl)hexafluoropropane and 3,3′-dihydroxybenzidine, but are not limited to these. .
- the quinonediazide compound preferably contains a phenol compound and an ester with a 4-naphthoquinonediazide sulfonyl group. This makes it possible to obtain higher sensitivity to i-line exposure and higher resolution.
- the content of the quinonediazide compound used in the resin composition of the present invention is preferably 1 to 50 parts by mass, more preferably 10 to 40 parts by mass, based on 100 parts by mass of the resin.
- the content of the quinonediazide compound is preferably 1 to 50 parts by mass, more preferably 10 to 40 parts by mass, based on 100 parts by mass of the resin.
- the photoacid generator is preferably a compound containing an oximesulfonate group (hereinafter also simply referred to as "oximesulfonate compound").
- the oxime sulfonate compound is not particularly limited as long as it has an oxime sulfonate group. 105) is preferably an oxime sulfonate compound.
- X3 represents an alkyl group, an alkoxy group, or a halogen atom. When there are multiple X3's, they may be the same or different.
- the alkyl group and alkoxy group in X3 above may have a substituent.
- the alkyl group for X 3 above is preferably a linear or branched alkyl group having 1 to 4 carbon atoms.
- the alkoxy group for X 3 is preferably a linear or branched alkoxy group having 1 to 4 carbon atoms.
- halogen atom for X3 a chlorine atom or a fluorine atom is preferable.
- m3 represents an integer of 0 to 3, preferably 0 or 1.
- R 34 represents an alkyl group or an aryl group, an alkyl group having 1 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, a halogenated alkyl group having 1 to 5 carbon atoms, a carbon It is preferably a halogenated alkoxy group of number 1 to 5, a phenyl group optionally substituted with W, a naphthyl group optionally substituted with W or an anthranyl group optionally substituted with W.
- W is a halogen atom, a cyano group, a nitro group, an alkyl group having 1 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, a halogenated alkyl group having 1 to 5 carbon atoms, or a halogenated alkoxy group having 1 to 5 carbon atoms; group, an aryl group having 6 to 20 carbon atoms, and an aryl halide group having 6 to 20 carbon atoms.
- m3 is 3
- X 3 is a methyl group
- the substitution position of X 3 is the ortho position
- R 34 is a linear alkyl group having 1 to 10 carbon atoms
- Compounds with a 7-dimethyl-2-oxonorbornylmethyl group or a p-tolyl group are particularly preferred.
- oxime sulfonate compound represented by formula (OS-1) are described in paragraph numbers 0064 to 0068 of JP-A-2011-209692 and paragraph numbers 0158-0167 of JP-A-2015-194674.
- the following compounds are exemplified, the contents of which are incorporated herein.
- R s1 represents an alkyl group, an aryl group or a heteroaryl group
- R s2 which may be present in plurality, is each independently a hydrogen atom, an alkyl group, or an aryl represents a group or a halogen atom
- each R s6 which may be present in plurality independently represents a halogen atom, an alkyl group, an alkyloxy group, a sulfonic acid group, an aminosulfonyl group or an alkoxysulfonyl group
- Xs represents O or S.
- ns represents 1 or 2
- ms represents an integer of 0-6.
- an alkyl group preferably having 1 to 30 carbon atoms
- an aryl group preferably having 6 to 30 carbon atoms
- a heteroaryl group preferably having 6 to 30 carbon atoms represented by R s1 Numbers 4 to 30 are preferable
- R s1 Numbers 4 to 30 may have a known substituent as long as the effects of the present invention can be obtained.
- R s2 is preferably a hydrogen atom, an alkyl group (preferably having 1 to 12 carbon atoms) or an aryl group (preferably having 6 to 30 carbon atoms). , a hydrogen atom or an alkyl group.
- R s2 that may be present in the compound at least two times, one or two are preferably an alkyl group, an aryl group or a halogen atom, and one is more preferably an alkyl group, an aryl group or a halogen atom.
- one is an alkyl group and the rest are hydrogen atoms.
- the alkyl group or aryl group represented by R s2 may have a known substituent as long as the effects of the present invention can be obtained.
- Xs represents O or S, preferably O.
- the ring containing Xs as a ring member is a 5- or 6-membered ring.
- ns represents 1 or 2, and when Xs is O, ns is preferably 1, and when Xs is S, ns is 2 is preferred.
- the alkyl group (preferably having 1 to 30 carbon atoms) and alkyloxy group (preferably having 1 to 30 carbon atoms) represented by R s6 are substituents. may have.
- ms represents an integer of 0 to 6, preferably an integer of 0 to 2, more preferably 0 or 1, and 0 is particularly preferred.
- the compound represented by the above formula (OS-103) is particularly preferably a compound represented by the following formula (OS-106), formula (OS-110) or formula (OS-111).
- the compound represented by the formula (OS-104) is particularly preferably a compound represented by the following formula (OS-107), and the compound represented by the above formula (OS-105) is a compound represented by the following formula (OS -108) or a compound represented by the formula (OS-109).
- R t1 represents an alkyl group, an aryl group or a heteroaryl group
- R t7 represents a hydrogen atom or a bromine atom
- R t8 represents a hydrogen atom, the number of carbon atoms 1 to 8 alkyl group, halogen atom, chloromethyl group, bromomethyl group, bromoethyl group, methoxymethyl group, phenyl group or chlorophenyl group
- R t9 represents a hydrogen atom, a halogen atom, a methyl group or a methoxy group
- t2 represents a hydrogen atom or a methyl group.
- R t7 represents a hydrogen atom or a bromine atom, preferably a hydrogen atom.
- R t8 is a hydrogen atom, an alkyl group having 1 to 8 carbon atoms, a halogen atom, a chloromethyl group, a bromomethyl group, a bromoethyl group, a methoxymethyl group, a phenyl group. or represents a chlorophenyl group, preferably an alkyl group having 1 to 8 carbon atoms, a halogen atom or a phenyl group, more preferably an alkyl group having 1 to 8 carbon atoms, and an alkyl group having 1 to 6 carbon atoms is more preferred, and a methyl group is particularly preferred.
- R t9 represents a hydrogen atom, a halogen atom, a methyl group or a methoxy group, preferably a hydrogen atom.
- R t2 represents a hydrogen atom or a methyl group, preferably a hydrogen atom.
- the oximes may have either one of the three-dimensional structures (E, Z) or may be a mixture.
- Specific examples of the oxime sulfonate compounds represented by the formulas (OS-103) to (OS-105) include paragraphs 0088 to 0095 of JP-A-2011-209692 and paragraphs of JP-A-2015-194674. Compounds described in numbers 0168-0194 are exemplified, the contents of which are incorporated herein.
- oximesulfonate compound containing at least one oximesulfonate group include compounds represented by the following formulas (OS-101) and (OS-102).
- R u9 is a hydrogen atom, an alkyl group, an alkenyl group, an alkoxy group, an alkoxycarbonyl group, an acyl group, a carbamoyl group, a sulfamoyl group, a sulfo group, a cyano group, It represents an aryl group or a heteroaryl group.
- An aspect in which Ru9 is a cyano group or an aryl group is more preferred, and an aspect in which Ru9 is a cyano group, a phenyl group or a naphthyl group is even more preferred.
- R u2a represents an alkyl group or an aryl group.
- Xu is -O-, -S-, -NH-, -NR u5 -, -CH 2 -, -CR u6 H- or CR u6 R u7 —, and R u5 to R u7 each independently represent an alkyl group or an aryl group.
- R u1 to R u4 are each independently a hydrogen atom, a halogen atom, an alkyl group, an alkenyl group, an alkoxy group, an amino group, an alkoxycarbonyl group, an alkylcarbonyl group. , an arylcarbonyl group, an amido group, a sulfo group, a cyano group or an aryl group.
- Two of R u1 to R u4 may each combine to form a ring. At this time, the ring may be condensed to form a condensed ring together with the benzene ring.
- R u1 to R u4 are preferably hydrogen atoms, halogen atoms or alkyl groups, and an aspect in which at least two of R u1 to R u4 are bonded to each other to form an aryl group is also preferable. Among them, an aspect in which all of R u1 to R u4 are hydrogen atoms is preferable. Any of the substituents described above may further have a substituent.
- the compound represented by formula (OS-101) is more preferably a compound represented by formula (OS-102).
- the stereostructures (E, Z, etc.) of the oxime and benzothiazole rings may be either one or a mixture.
- Specific examples of the compound represented by formula (OS-101) include compounds described in paragraph numbers 0102 to 0106 of JP-A-2011-209692 and paragraph numbers 0195-0207 of JP-A-2015-194674. and the contents of which are incorporated herein.
- the following b-9, b-16, b-31 and b-33 are preferred.
- Examples of commercially available products include WPAG-336 (manufactured by FUJIFILM Wako Pure Chemical Industries, Ltd.), WPAG-443 (manufactured by FUJIFILM Wako Pure Chemical Industries, Ltd.), MBZ-101 (manufactured by Midori Chemical Co., Ltd.), and the like. can be done.
- organic halogenated compounds include those described by Wakabayashi et al., "Bull Chem. Soc Japan” 42, 2924 (1969), US Pat. 48-36281, JP-A-55-32070, JP-A-60-239736, JP-A-61-169835, JP-A-61-169837, JP-A-62-58241 , JP-A-62-212401, JP-A-63-70243, JP-A-63-298339, M.P. P. Hutt "Journal of Heterocyclic Chemistry” 1 (No 3), (1970), the contents of which are incorporated herein.
- Particularly preferred examples include an oxazole compound substituted with a trihalomethyl group: an S-triazine compound. More preferably, s-triazine derivatives having at least one mono-, di-, or trihalogen-substituted methyl group attached to the s-triazine ring, specifically, for example, 2,4,6-tris(monochloromethyl)- s-triazine, 2,4,6-tris(dichloromethyl)-s-triazine, 2,4,6-tris(trichloromethyl)-s-triazine, 2-methyl-4,6-bis(trichloromethyl)- s-triazine, 2-n-propyl-4,6-bis(trichloromethyl)-s-triazine, 2-( ⁇ , ⁇ , ⁇ -trichloroethyl)-4,6-bis(trichloromethyl)-s-triazine , 2-phenyl-4,6-bis(trichloromethyl)-
- organic borate compounds include JP-A-62-143044, JP-A-62-150242, JP-A-9-188685, JP-A-9-188686, and JP-A-9-188710. Publications, JP-A-2000-131837, JP-A-2002-107916, JP-A-2764769, JP-A-2002-116539, etc., and Kunz, Martin "Rad Tech'98. Proceeding April 19-22 , 1998, Chicago", etc., organic boron sulfonium complexes or organic boron oxosulfonium described in JP-A-6-157623, JP-A-6-175564, and JP-A-6-175561.
- JP-A-6-175554 organic boron-iodonium complexes described in JP-A-6-175553, organic boron-phosphonium complexes described in JP-A-9-188710, JP-A-6-348011, JP-A-H9 No. 7-128785, JP-A-7-140589, JP-A-7-306527, JP-A-7-292014 and the like organoboron transition metal coordination complexes are mentioned as specific examples. incorporated herein.
- disulfone compound examples include compounds described in JP-A-61-166544, Japanese Patent Application No. 2001-132318, and diazodisulfone compounds.
- onium salt compound for example, S.I. I. Schlesinger, Photograph. Sci. Eng. , 18, 387 (1974); S. Bal et al, Polymer, 21,423 (1980), diazonium salts, US Pat. , 055, 4,069,056, EP 104,143, US Pat. 2-150848, iodonium salts described in JP-A-2-296514, European Patent Nos. 370,693, 390,214, 233,567, 297,443, 297,442, U.S. Pat. Nos. 4,933,377, 161,811, 410,201, 339,049, 4,760,013, 4,734,444, 2,833,827 German Patent Nos.
- Onium salts include onium salts represented by the following general formulas (RI-I) to (RI-III).
- Ar 11 represents an aryl group having 20 or less carbon atoms which may have 1 to 6 substituents. ⁇ 12 alkenyl groups, alkynyl groups having 2 to 12 carbon atoms, aryl groups having 6 to 12 carbon atoms, alkoxy groups having 1 to 12 carbon atoms, aryloxy groups having 1 to 12 carbon atoms, halogen atoms, and 1 to 12 carbon atoms.
- an alkylamino group a dialkylamino group having 2 to 12 carbon atoms, an alkylamide group having an alkyl group having 1 to 12 carbon atoms or an arylamide group having an aryl group having 6 to 20 carbon atoms, a carbonyl group, a carboxy group, a cyano groups, sulfonyl groups, thioalkyl groups having 1 to 12 carbon atoms, and thioaryl groups having 1 to 12 carbon atoms.
- Z 11 - represents a monovalent anion such as a halogen ion, a perchlorate ion, a hexafluorophosphate ion, a tetrafluoroborate ion, a sulfonate ion, a sulfinate ion, a thiosulfonate ion, a sulfate ion, and a stable Perchlorate ion, hexafluorophosphate ion, tetrafluoroborate ion, sulfonate ion, and sulfinate ion are preferred from the aspect.
- Ar 21 and Ar 22 each independently represent an aryl group having 1 to 20 carbon atoms which may have 1 to 6 substituents, and preferred substituents are 1 to 12 carbon atoms.
- an alkyl group having 2 to 12 carbon atoms an alkenyl group having 2 to 12 carbon atoms, an alkynyl group having 2 to 12 carbon atoms, an aryl group having 1 to 12 carbon atoms, an alkoxy group having 1 to 12 carbon atoms, an aryloxy group having 1 to 12 carbon atoms, a halogen an atom, a monoalkylamino group having 1 to 12 carbon atoms, a dialkylamino group having an alkyl group having 1 to 12 carbon atoms, an alkylamido group or an arylamide group having an alkyl group having 1 to 12 carbon atoms, carbonyl group, carboxy group, cyano group, sulfonyl group, thioalkyl group having 1 to 12 carbon atoms.
- Z21 ⁇ represents a monovalent anion, and is a halogen ion, perchlorate ion, hexafluorophosphate ion, tetrafluoroborate ion, sulfonate ion, sulfinate ion, thiosulfonate ion, sulfate ion, stability, reaction Perchlorate ions, hexafluorophosphate ions, tetrafluoroborate ions, sulfonate ions, sulfinate ions, and carboxylate ions are preferred from the viewpoint of their properties.
- R 31 , R 32 and R 33 each independently represents an aryl group, an alkyl group, an alkenyl group or an alkynyl group having 6 to 20 carbon atoms which may have 1 to 6 substituents. In view of reactivity and stability, it is preferably an aryl group.
- Preferred substituents include an alkyl group having 1 to 12 carbon atoms, an alkenyl group having 2 to 12 carbon atoms, an alkynyl group having 2 to 12 carbon atoms, an aryl group having 1 to 12 carbon atoms, an alkoxy group having 1 to 12 carbon atoms, an aryloxy group having 1 to 12 carbon atoms, a halogen atom, a monoalkylamino group having 1 to 12 carbon atoms, a dialkylamino group having 1 to 12 carbon atoms in each alkyl group, and an alkyl group having 1 to 12 carbon atoms; 1 to 12 alkylamide or arylamido groups, carbonyl groups, carboxy groups, cyano groups, sulfonyl groups, C1 to C12 thioalkyl groups, and C1 to C12 thioaryl groups.
- Z 31 ⁇ represents a monovalent anion and is a halogen ion, perchlorate ion, hexafluorophosphate ion, tetrafluoroborate ion, sulfonate ion, sulfinate ion, thiosulfonate ion, sulfate ion, stability, From the viewpoint of reactivity, perchlorate ion, hexafluorophosphate ion, tetrafluoroborate ion, sulfonate ion, sulfinate ion, and carboxylate ion are preferred.
- preferred photoacid generators include the following.
- the photoacid generator is preferably used in an amount of 0.1 to 20% by mass, more preferably 0.5 to 18% by mass, and 0.5 to 10% by mass, based on the total solid content of the resin composition. It is more preferably used, more preferably 0.5 to 3% by mass, and even more preferably 0.5 to 1.2% by mass.
- a photo-acid generator may be used individually by 1 type, or may be used in multiple types combination. In the case of a combination of multiple types, the total amount thereof is preferably within the above range.
- the resin composition of the present invention may contain a base generator.
- the base generator is a compound capable of generating a base by physical or chemical action.
- Preferred base generators for the resin composition of the present invention include thermal base generators and photobase generators.
- the resin composition when the resin composition contains a cyclized resin precursor, the resin composition preferably contains a base generator.
- the base generator may be an ionic base generator or a non-ionic base generator.
- bases generated from base generators include secondary amines and tertiary amines. There are no particular restrictions on the base generator used in the present invention, and known base generators can be used. Examples of known base generators include carbamoyloxime compounds, carbamoylhydroxylamine compounds, carbamic acid compounds, formamide compounds, acetamide compounds, carbamate compounds, benzylcarbamate compounds, nitrobenzylcarbamate compounds, sulfonamide compounds, imidazole derivative compounds, and amine imides.
- Nonionic base generator examples include compounds represented by Formula (B1), Formula (B2), or Formula (B3).
- Rb 1 , Rb 2 and Rb 3 are each independently an organic group having no tertiary amine structure, a halogen atom or a hydrogen atom. However, Rb 1 and Rb 2 are not hydrogen atoms at the same time. Also, none of Rb 1 , Rb 2 and Rb 3 has a carboxy group.
- the tertiary amine structure refers to a structure in which all three bonds of a trivalent nitrogen atom are covalently bonded to a hydrocarbon-based carbon atom. Therefore, when the bonded carbon atom is a carbon atom forming a carbonyl group, that is, when forming an amide group together with the nitrogen atom, this is not the case.
- Rb 1 , Rb 2 and Rb 3 preferably contains a cyclic structure, and more preferably at least two of them contain a cyclic structure.
- the cyclic structure may be either a single ring or a condensed ring, preferably a single ring or a condensed ring in which two single rings are condensed.
- the monocyclic ring is preferably a 5- or 6-membered ring, more preferably a 6-membered ring.
- the monocyclic ring is preferably a cyclohexane ring and a benzene ring, more preferably a cyclohexane ring.
- Rb 1 and Rb 2 are a hydrogen atom, an alkyl group (preferably 1 to 24 carbon atoms, more preferably 2 to 18 carbon atoms, even more preferably 3 to 12 carbon atoms), an alkenyl group (preferably 2 to 24 carbon atoms). , more preferably 2 to 18, more preferably 3 to 12), an aryl group (preferably 6 to 22 carbon atoms, more preferably 6 to 18, even more preferably 6 to 10), or an arylalkyl group (7 carbon atoms to 25 are preferred, 7 to 19 are more preferred, and 7 to 12 are even more preferred). These groups may have substituents to the extent that the effects of the present invention are exhibited. Rb 1 and Rb 2 may combine with each other to form a ring.
- the ring to be formed is preferably a 4- to 7-membered nitrogen-containing heterocyclic ring.
- Rb 1 and Rb 2 are particularly linear, branched or cyclic alkyl groups (having preferably 1 to 24 carbon atoms, more preferably 2 to 18 carbon atoms, and still more preferably 3 to 12 carbon atoms) which may have a substituent.
- Rb 3 is an alkyl group (preferably 1 to 24 carbon atoms, more preferably 2 to 18 carbon atoms, still more preferably 3 to 12 carbon atoms), an aryl group (preferably 6 to 22 carbon atoms, more preferably 6 to 18 carbon atoms, 6 to 10 are more preferred), alkenyl groups (preferably 2 to 24 carbon atoms, more preferably 2 to 12, more preferably 2 to 6), arylalkyl groups (preferably 7 to 23 carbon atoms, more preferably 7 to 19 preferably 7 to 12), arylalkenyl groups (preferably 8 to 24 carbon atoms, more preferably 8 to 20, more preferably 8 to 16), alkoxyl groups (preferably 1 to 24 carbon atoms, 2 to 18 is more preferred, and 3 to 12 are even more preferred), an aryloxy group (preferably 6 to 22 carbon atoms, more preferably 6 to 18, and even more preferably 6 to 12), or an arylalkyloxy group (preferably 7 to 12 carbon atoms).
- an aryl group preferably
- Rb 3 may further have a substituent as long as the effects of the present invention are exhibited.
- the compound represented by formula (B1) is preferably a compound represented by formula (B1-1) or formula (B1-2) below.
- Rb 11 and Rb 12 and Rb 31 and Rb 32 are respectively the same as Rb 1 and Rb 2 in formula (B1).
- Rb 13 is an alkyl group (preferably 1 to 24 carbon atoms, more preferably 2 to 18 carbon atoms, still more preferably 3 to 12 carbon atoms), an alkenyl group (preferably 2 to 24 carbon atoms, more preferably 2 to 18 carbon atoms, 3 to 12 is more preferred), an aryl group (preferably 6 to 22 carbon atoms, more preferably 6 to 18, more preferably 6 to 12), an arylalkyl group (preferably 7 to 23 carbon atoms, more preferably 7 to 19, 7 to 12 are more preferable), and may have a substituent within the range in which the effects of the present invention are exhibited.
- Rb 13 is preferably an arylalkyl group.
- Rb 33 and Rb 34 each independently represents a hydrogen atom, an alkyl group (preferably 1 to 12 carbon atoms, more preferably 1 to 8 carbon atoms, and even more preferably 1 to 3 carbon atoms), an alkenyl group (preferably 2 to 12 carbon atoms , more preferably 2 to 8, more preferably 2 to 3), an aryl group (preferably 6 to 22 carbon atoms, more preferably 6 to 18, more preferably 6 to 10), an arylalkyl group (7 to 23 is preferred, 7 to 19 are more preferred, and 7 to 11 are even more preferred), and a hydrogen atom is preferred.
- an alkyl group preferably 1 to 12 carbon atoms, more preferably 1 to 8 carbon atoms, and even more preferably 1 to 3 carbon atoms
- an alkenyl group preferably 2 to 12 carbon atoms , more preferably 2 to 8, more preferably 2 to 3
- an aryl group preferably 6 to 22 carbon atoms, more preferably 6 to 18, more preferably 6 to 10
- Rb 35 is an alkyl group (preferably 1 to 24 carbon atoms, more preferably 1 to 12 carbon atoms, still more preferably 3 to 8 carbon atoms), an alkenyl group (preferably 2 to 12 carbon atoms, more preferably 2 to 10 carbon atoms, 3 to 8 is more preferred), an aryl group (preferably 6 to 22 carbon atoms, more preferably 6 to 18, even more preferably 6 to 12), an arylalkyl group (preferably 7 to 23 carbon atoms, more preferably 7 to 19 , 7 to 12 are more preferred), and aryl groups are preferred.
- the compound represented by formula (B1-1) is also preferably the compound represented by formula (B1-1a).
- Rb 11 and Rb 12 have the same definitions as Rb 11 and Rb 12 in formula (B1-1).
- Rb 15 and Rb 16 are hydrogen atoms, alkyl groups (preferably 1 to 12 carbon atoms, more preferably 1 to 6, even more preferably 1 to 3), alkenyl groups (preferably 2 to 12 carbon atoms, 2 to 6 more preferably 2 to 3), an aryl group (preferably 6 to 22 carbon atoms, more preferably 6 to 18, even more preferably 6 to 10), an arylalkyl group (preferably 7 to 23 carbon atoms, 7 to 19 are more preferred, and 7 to 11 are even more preferred), and a hydrogen atom or a methyl group is preferred.
- Rb 17 is an alkyl group (preferably 1 to 24 carbon atoms, more preferably 1 to 12 carbon atoms, still more preferably 3 to 8 carbon atoms), an alkenyl group (preferably 2 to 12 carbon atoms, more preferably 2 to 10 carbon atoms, 3 to 8 is more preferred), an aryl group (preferably 6 to 22 carbon atoms, more preferably 6 to 18, more preferably 6 to 12), an arylalkyl group (preferably 7 to 23 carbon atoms, more preferably 7 to 19, 7 to 12 are more preferable), and aryl groups are particularly preferable.
- an alkyl group preferably 1 to 24 carbon atoms, more preferably 1 to 12 carbon atoms, still more preferably 3 to 8 carbon atoms
- an alkenyl group preferably 2 to 12 carbon atoms, more preferably 2 to 10 carbon atoms, 3 to 8 is more preferred
- an aryl group preferably 6 to 22 carbon atoms, more preferably 6 to 18, more preferably 6 to 12
- L is a divalent hydrocarbon group having a saturated hydrocarbon group on a connecting chain route connecting adjacent oxygen atoms and carbon atoms, wherein the number of atoms on the connecting chain route is represents a hydrocarbon group of 3 or more.
- R N1 and R N2 each independently represent a monovalent organic group.
- the term “connected chain” refers to the shortest (minimum number of atoms) of atomic chains on a path connecting two atoms or groups of atoms to be connected.
- L is composed of a phenylene ethylene group, has an ethylene group as a saturated hydrocarbon group
- the linking chain is composed of four carbon atoms, and on the route of the linking chain
- the number of atoms of (that is, the number of atoms constituting the linked chain, hereinafter also referred to as "linked chain length" or "linked chain length”) is 4.
- the number of carbon atoms in L (including carbon atoms other than carbon atoms in the connecting chain) in formula (B3) is preferably 3-24.
- the upper limit is more preferably 12 or less, still more preferably 10 or less, and particularly preferably 8 or less. More preferably, the lower limit is 4 or more.
- the upper limit of the linking chain length of L is preferably 12 or less, more preferably 8 or less, further preferably 6 or less, and 5 The following are particularly preferred.
- the linking chain length of L is preferably 4 or 5, most preferably 4.
- Specific preferred compounds of the base generator include, for example, compounds described in paragraph numbers 0102 to 0168 of WO2020/066416, and compounds described in paragraph numbers 0143 to 0177 of WO2018/038002. mentioned.
- the base generator preferably contains a compound represented by the following formula (N1).
- R N1 and R N2 each independently represent a monovalent organic group
- RC1 represents a hydrogen atom or a protecting group
- L represents a divalent linking group
- L is a divalent linking group, preferably a divalent organic group.
- the linking chain length of the linking group is preferably 1 or more, more preferably 2 or more.
- the upper limit is preferably 12 or less, more preferably 8 or less, and even more preferably 5 or less.
- the linking chain length is the number of atoms present in the atomic arrangement that provides the shortest path between two carbonyl groups in the formula.
- R N1 and R N2 each independently represent a monovalent organic group (preferably 1 to 24 carbon atoms, more preferably 2 to 18 carbon atoms, more preferably 3 to 12 carbon atoms), and a hydrocarbon group (preferably 1 to 24 carbon atoms, more preferably 1 to 12 carbon atoms, more preferably 1 to 10 carbon atoms), specifically, an aliphatic hydrocarbon group (preferably 1 to 24 carbon atoms, 1 to 12 is more preferable, 1 to 10 are more preferable) or an aromatic hydrocarbon group (preferably 6 to 22 carbon atoms, more preferably 6 to 18, more preferably 6 to 10), and an aliphatic hydrocarbon groups are preferred.
- a monovalent organic group preferably 1 to 24 carbon atoms, more preferably 2 to 18 carbon atoms, more preferably 3 to 12 carbon atoms
- a hydrocarbon group preferably 1 to 24 carbon atoms, more preferably 1 to 12 carbon atoms, more preferably 1 to 10 carbon atoms
- an aliphatic hydrocarbon group preferably 1 to
- an aliphatic hydrocarbon group as R N1 and R N2 because the generated base has high basicity.
- the aliphatic hydrocarbon group and the aromatic hydrocarbon group may have a substituent, and the aliphatic hydrocarbon group and the aromatic hydrocarbon group are in the aliphatic hydrocarbon chain or in the aromatic ring, You may have an oxygen atom in the substituent.
- an aspect in which the aliphatic hydrocarbon group has an oxygen atom in the hydrocarbon chain is exemplified.
- Aliphatic hydrocarbon groups constituting R N1 and R N2 include linear or branched chain alkyl groups, cyclic alkyl groups, groups related to combinations of chain alkyl groups and cyclic alkyl groups, and oxygen atoms in the chains.
- Alkyl groups having The linear or branched chain alkyl group preferably has 1 to 24 carbon atoms, more preferably 2 to 18 carbon atoms, and still more preferably 3 to 12 carbon atoms.
- Linear or branched chain alkyl groups are, for example, methyl, ethyl, propyl, butyl, pentyl, hexyl, heptyl, octyl, nonyl, decyl, undecyl, dodecyl, isopropyl group, isobutyl group, secondary butyl group, tertiary butyl group, isopentyl group, neopentyl group, tertiary pentyl group, isohexyl group and the like.
- the cyclic alkyl group preferably has 3 to 12 carbon atoms, more preferably 3 to 6 carbon atoms.
- Cyclic alkyl groups include, for example, cyclopropyl, cyclobutyl, cyclopentyl, cyclohexyl, and cyclooctyl groups.
- Groups associated with a combination of a chain alkyl group and a cyclic alkyl group preferably have 4 to 24 carbon atoms, more preferably 4 to 18 carbon atoms, and even more preferably 4 to 12 carbon atoms.
- Groups related to combinations of chain alkyl groups and cyclic alkyl groups include, for example, a cyclohexylmethyl group, a cyclohexylethyl group, a cyclohexylpropyl group, a methylcyclohexylmethyl group, and an ethylcyclohexylethyl group.
- the alkyl group having an oxygen atom in the chain preferably has 2 to 12 carbon atoms, more preferably 2 to 6 carbon atoms, and still more preferably 2 to 4 carbon atoms.
- An alkyl group having an oxygen atom in the chain may be chain or cyclic, and may be linear or branched.
- R 1 N1 and R 2 N2 are preferably alkyl groups having 5 to 12 carbon atoms.
- a group having a cyclic alkyl group or an alkyl group having 1 to 8 carbon atoms is preferable.
- RN1 and RN2 may be linked to each other to form a ring structure.
- the chain may have an oxygen atom or the like.
- the cyclic structure formed by R N1 and R N2 may be a monocyclic ring or a condensed ring, but is preferably a monocyclic ring.
- the cyclic structure to be formed is preferably a 5- or 6-membered ring containing a nitrogen atom in formula (N1), such as pyrrole ring, imidazole ring, pyrazole ring, pyrroline ring, pyrrolidine ring, imidazolidine ring, A pyrazolidine ring, a piperidine ring, a piperazine ring, a morpholine ring and the like can be mentioned, and a pyrroline ring, a pyrrolidine ring, a piperidine ring, a piperazine ring and a morpholine ring are preferably mentioned.
- N1 nitrogen atom in formula (N1)
- R C1 represents a hydrogen atom or a protecting group, preferably a hydrogen atom.
- the protective group is preferably a protective group that is decomposed by the action of an acid or a base, and preferably includes a protective group that is decomposed by an acid.
- protecting groups include chain or cyclic alkyl groups or chain or cyclic alkyl groups having an oxygen atom in the chain.
- Chain or cyclic alkyl groups include methyl group, ethyl group, isopropyl group, tert-butyl group, cyclohexyl group and the like.
- the chain alkyl group having an oxygen atom in the chain specifically includes an alkyloxyalkyl group, more specifically a methyloxymethyl (MOM) group, an ethyloxyethyl (EE) group, and the like. mentioned.
- Cyclic alkyl groups having an oxygen atom in the chain include epoxy group, glycidyl group, oxetanyl group, tetrahydrofuranyl group, tetrahydropyranyl (THP) group and the like.
- the divalent linking group constituting L is not particularly defined, but is preferably a hydrocarbon group, more preferably an aliphatic hydrocarbon group.
- the hydrocarbon group may have substituents and may have atoms of types other than carbon atoms in the hydrocarbon chain. More specifically, it is preferably a divalent hydrocarbon linking group which may have an oxygen atom in the chain, and a divalent aliphatic hydrocarbon which may have an oxygen atom in the chain group, a divalent aromatic hydrocarbon group, or a group related to a combination of a divalent aliphatic hydrocarbon group which may have an oxygen atom in the chain and a divalent aromatic hydrocarbon group, A divalent aliphatic hydrocarbon group which may have an oxygen atom in the chain is more preferred.
- the divalent hydrocarbon linking group preferably has 1 to 24 carbon atoms, more preferably 2 to 12 carbon atoms, and even more preferably 2 to 6 carbon atoms.
- the divalent aliphatic hydrocarbon group preferably has 1 to 12 carbon atoms, more preferably 2 to 6 carbon atoms, and still more preferably 2 to 4 carbon atoms.
- the divalent aromatic hydrocarbon group preferably has 6 to 22 carbon atoms, more preferably 6 to 18 carbon atoms, and even more preferably 6 to 10 carbon atoms.
- a group related to a combination of a divalent aliphatic hydrocarbon group and a divalent aromatic hydrocarbon group preferably has 7 to 22 carbon atoms, more preferably 7 to 18, and 7 to 10 is more preferred.
- linking group L examples include a linear or branched chain alkylene group, a cyclic alkylene group, a group related to a combination of a chain alkylene group and a cyclic alkylene group, and an alkylene group having an oxygen atom in the chain.
- a linear or branched alkenylene group, a cyclic alkenylene group, an arylene group and an arylenealkylene group are preferred.
- the linear or branched chain alkylene group preferably has 1 to 12 carbon atoms, more preferably 2 to 6 carbon atoms, and still more preferably 2 to 4 carbon atoms.
- the cyclic alkylene group preferably has 3 to 12 carbon atoms, more preferably 3 to 6 carbon atoms.
- the group associated with the combination of a chain alkylene group and a cyclic alkylene group preferably has 4 to 24 carbon atoms, more preferably 4 to 12 carbon atoms, and even more preferably 4 to 6 carbon atoms.
- An alkylene group having an oxygen atom in the chain may be chain or cyclic, and may be linear or branched.
- the alkylene group having an oxygen atom in the chain preferably has 1 to 12 carbon atoms, more preferably 1 to 6 carbon atoms, and still more preferably 1 to 3 carbon atoms.
- the linear or branched chain alkenylene group preferably has 2 to 12 carbon atoms, more preferably 2 to 6 carbon atoms, and still more preferably 2 to 3 carbon atoms.
- the linear or branched chain alkenylene group preferably has 1 to 10 C ⁇ C bonds, more preferably 1 to 6, even more preferably 1 to 3.
- the cyclic alkenylene group preferably has 3 to 12 carbon atoms, more preferably 3 to 6 carbon atoms.
- the number of C ⁇ C bonds in the cyclic alkenylene group is preferably 1-6, more preferably 1-4, even more preferably 1-2.
- the arylene group preferably has 6 to 22 carbon atoms, more preferably 6 to 18 carbon atoms, and even more preferably 6 to 10 carbon atoms.
- the arylene alkylene group preferably has 7 to 23 carbon atoms, more preferably 7 to 19 carbon atoms, and even more preferably 7 to 11 carbon atoms.
- a chain alkylene group, a cyclic alkylene group, an alkylene group having an oxygen atom in the chain, a chain alkenylene group, an arylene group, and an arylene alkylene group are preferable, and a 1,2-ethylene group and a propanediyl group (especially 1, 3-propanediyl group), cyclohexanediyl group (especially 1,2-cyclohexanediyl group), vinylene group (especially cis-vinylene group), phenylene group (1,2-phenylene group), phenylenemethylene group (especially 1,2-phenylene methylene group) and ethyleneoxyethylene group (especially 1,2-ethyleneoxy-1,2-ethylene group) are more preferable.
- base generators include the following, but the present invention should not be construed as being limited thereto.
- the molecular weight of the nonionic base generator is preferably 800 or less, more preferably 600 or less, and even more preferably 500 or less.
- the lower limit is preferably 100 or more, more preferably 200 or more, and even more preferably 300 or more.
- Specific preferred compounds of the ionic base generator include, for example, compounds described in paragraphs 0148 to 0163 of International Publication No. 2018/038002.
- ammonium salts include the following compounds, but the present invention is not limited thereto.
- iminium salts include the following compounds, but the present invention is not limited thereto.
- the content of the base generator is preferably 0.1 to 50 parts by mass with respect to 100 parts by mass of the resin in the resin composition of the present invention.
- the lower limit is more preferably 0.3 parts by mass or more, and even more preferably 0.5 parts by mass or more.
- the upper limit is more preferably 30 parts by mass or less, still more preferably 20 parts by mass or less, even more preferably 10 parts by mass or less, and may be 5 parts by mass or less, or may be 4 parts by mass or less.
- One or two or more base generators can be used. When two or more are used, the total amount is preferably within the above range.
- the resin composition of the present invention preferably contains a solvent. Any known solvent can be used as the solvent.
- the solvent is preferably an organic solvent.
- Organic solvents include compounds such as esters, ethers, ketones, cyclic hydrocarbons, sulfoxides, amides, ureas, and alcohols.
- Esters such as ethyl acetate, n-butyl acetate, isobutyl acetate, hexyl acetate, amyl formate, isoamyl acetate, butyl propionate, isopropyl butyrate, ethyl butyrate, butyl butyrate, methyl lactate, ethyl lactate, ⁇ -butyrolactone , ⁇ -caprolactone, ⁇ -valerolactone, alkyl alkyloxyacetates (e.g. methyl alkyloxyacetate, ethyl alkyloxyacetate, butyl alkyloxyacetate (e.g.
- 3-alkyloxypropionic acid alkyl esters e.g., methyl 3-alkyloxypropionate, ethyl 3-alkyloxypropionate, etc.
- 2-alkyloxypropionate alkyl esters e.g., methyl 2-alkyloxypropionate, ethyl 2-alkyloxypropionate, 2-alkyl propyl oxypropionate (e.g., methyl 2-methoxypropionate, ethyl 2-methoxypropionate, propyl 2-methoxypropionate, methyl 2-ethoxypropionate, ethyl 2-ethoxypropionate)
- 2-alkyloxy- Methyl 2-methylpropionate and ethyl 2-alkyloxy-2-methylpropionate e.g., methyl 2-methoxy-2-methylpropionate, ethyl 2-ethoxy-2-methylpropionate, etc.
- ethers include ethylene glycol dimethyl ether, diethylene glycol dimethyl ether, diethylene glycol diethyl ether, diethylene glycol ethyl methyl ether, diethylene glycol butyl methyl ether, triethylene glycol dimethyl ether, tetraethylene glycol dimethyl ether, tetrahydrofuran, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, Methyl cellosolve acetate, ethyl cellosolve acetate, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monobutyl ether, propylene glycol monomethyl ether, propylene glycol dimethyl ether, propylene glycol dimethyl ether, propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate, ethylene glycol monobutyl ether, ethylene glycol Preferred examples include monobutyl ether acetate
- Suitable ketones include, for example, methyl ethyl ketone, cyclohexanone, cyclopentanone, 2-heptanone, 3-heptanone, 3-methylcyclohexanone, levoglucosenone, dihydrolevoglucosenone and the like.
- Suitable examples of cyclic hydrocarbons include aromatic hydrocarbons such as toluene, xylene and anisole, and cyclic terpenes such as limonene.
- Suitable sulfoxides include, for example, dimethyl sulfoxide.
- Suitable ureas include N,N,N',N'-tetramethylurea, 1,3-dimethyl-2-imidazolidinone, and the like.
- Alcohols such as methanol, ethanol, 1-propanol, 2-propanol, 1-butanol, 1-pentanol, 1-hexanol, benzyl alcohol, ethylene glycol monomethyl ether, 1-methoxy-2-propanol, 2-ethoxyethanol, Diethylene glycol monoethyl ether, diethylene glycol monohexyl ether, triethylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol monomethyl ether, polyethylene glycol monomethyl ether, polypropylene glycol, tetraethylene glycol, ethylene glycol monobutyl ether, ethylene glycol monobenzyl ether, ethylene glycol monophenyl ether, methylphenyl carbinol, n-amyl alcohol, methyl amyl alcohol, diacetone alcohol and the like.
- a combination of dimethyl sulfoxide and ⁇ -butyrolactone or a combination of N-methyl-2-pyrrolidone and ethyl lactate is particularly
- the content of the solvent is preferably an amount such that the total solid concentration of the resin composition of the present invention is 5 to 80% by mass, more preferably 5 to 75% by mass. More preferably, the amount is from 10 to 70% by mass, and even more preferably from 20 to 70% by mass.
- the solvent content may be adjusted according to the desired thickness of the coating and the method of application.
- the resin composition of the present invention may contain only one type of solvent, or may contain two or more types. When two or more solvents are contained, the total is preferably within the above range.
- the resin composition of the present invention preferably contains a metal adhesion improver for improving adhesion to metal materials used for electrodes, wiring, and the like.
- metal adhesion improvers include alkoxysilyl group-containing silane coupling agents, aluminum-based adhesion aids, titanium-based adhesion aids, compounds having a sulfonamide structure and compounds having a thiourea structure, phosphoric acid derivative compounds, and ⁇ -ketoesters. compounds, amino compounds, and the like.
- silane coupling agent examples include compounds described in paragraph 0167 of WO 2015/199219, compounds described in paragraphs 0062 to 0073 of JP 2014-191002, and paragraphs of WO 2011/080992.
- Compounds described in 0063-0071, compounds described in paragraphs 0060-0061 of JP-A-2014-191252, compounds described in paragraphs 0045-0052 of JP-A-2014-041264, International Publication No. 2014/097594 Compounds described in paragraph 0055, compounds described in paragraphs 0067 to 0078 of JP-A-2018-173573, the contents of which are incorporated herein.
- silane coupling agents include, for example, vinyltrimethoxysilane, vinyltriethoxysilane, 2-(3,4-epoxycyclohexyl)ethyltrimethoxysilane, 3-glycidoxypropylmethyldimethoxysilane, 3-glycid.
- xypropyltrimethoxysilane 3-glycidoxypropylmethyldiethoxysilane, 3-glycidoxypropyltriethoxysilane, p-styryltrimethoxysilane, 3-methacryloxypropylmethyldimethoxysilane, 3-methacryloxypropyltrimethoxysilane Silane, 3-methacryloxypropylmethyldiethoxysilane, 3-methacryloxypropyltriethoxysilane, 3-acryloxypropyltrimethoxysilane, N-2-(aminoethyl)-3-aminopropylmethyldimethoxysilane, N-2 -(aminoethyl)-3-aminopropyltrimethoxysilane, 3-aminopropyltrimethoxysilane, 3-aminopropyltrimethoxysilane, 3-aminopropyltrimethoxysilane, 3-aminopropyltrimeth
- Aluminum-based adhesion aids include aluminum tris(ethylacetoacetate), aluminum tris(acetylacetonate), ethylacetoacetate aluminum diisopropylate, and the like.
- the content of the metal adhesion improver is preferably 0.01 to 30 parts by mass, more preferably 0.1 to 10 parts by mass, and still more preferably 0.01 to 30 parts by mass with respect to 100 parts by mass of the specific resin. It is in the range of 5 to 5 parts by mass. When it is at least the above lower limit value, the adhesiveness between the pattern and the metal layer is improved, and when it is at most the above upper limit value, the heat resistance and mechanical properties of the pattern are improved.
- One type of metal adhesion improver may be used, or two or more types may be used. When two or more types are used, the total is preferably within the above range.
- the resin composition of the present invention preferably further contains a migration inhibitor.
- a migration inhibitor By including the migration inhibitor, it becomes possible to effectively suppress the migration of metal ions derived from the metal layer (metal wiring) into the film.
- Migration inhibitors are not particularly limited, but heterocyclic rings (pyrrole ring, furan ring, thiophene ring, imidazole ring, oxazole ring, thiazole ring, pyrazole ring, isoxazole ring, isothiazole ring, tetrazole ring, pyridine ring, pyridazine ring, pyrimidine ring, pyrazine ring, piperidine ring, piperazine ring, morpholine ring, 2H-pyran ring and 6H-pyran ring, triazine ring), compounds having thioureas and sulfanyl groups, hindered phenolic compounds , salicylic acid derivative-based compounds, and hydrazide derivative-based compounds.
- heterocyclic rings pyrrole ring, furan ring, thiophene ring, imidazole ring, oxazole ring, thiazole ring,
- triazole compounds such as 1,2,4-triazole, benzotriazole, 3-amino-1,2,4-triazole, 3,5-diamino-1,2,4-triazole, 1H-tetrazole, 5- Tetrazole compounds such as phenyltetrazole and 5-amino-1H-tetrazole can be preferably used.
- an ion trapping agent that traps anions such as halogen ions can be used.
- Other migration inhibitors include rust inhibitors described in paragraph 0094 of JP-A-2013-015701, compounds described in paragraphs 0073 to 0076 of JP-A-2009-283711, and JP-A-2011-059656.
- the compound described in paragraph 0052, the compound described in paragraphs 0114, 0116 and 0118 of JP-A-2012-194520, the compound described in paragraph 0166 of WO 2015/199219, etc. can be used, and these The contents are incorporated herein.
- migration inhibitors include the following compounds.
- the content of the migration inhibitor is preferably 0.01 to 5.0% by mass with respect to the total solid content of the resin composition of the present invention. , more preferably 0.05 to 2.0% by mass, and even more preferably 0.1 to 1.0% by mass.
- migration inhibitor Only one type of migration inhibitor may be used, or two or more types may be used. When two or more migration inhibitors are used, the total is preferably within the above range.
- the resin composition of the present invention preferably contains a polymerization inhibitor.
- Polymerization inhibitors include phenol compounds, quinone compounds, amino compounds, N-oxyl free radical compound compounds, nitro compounds, nitroso compounds, heteroaromatic compounds, metal compounds and the like.
- Specific compounds of polymerization inhibitors include p-hydroquinone, o-hydroquinone, o-methoxyphenol, p-methoxyphenol, di-tert-butyl-p-cresol, pyrogallol, p-tert-butylcatechol, 1, 4-benzoquinone, diphenyl-p-benzoquinone, 4,4′-thiobis(3-methyl-6-tert-butylphenol), 2,2′-methylenebis(4-methyl-6-tert-butylphenol), N-nitrosophenyl hydroxylamine cerium salt, N-nitroso-N-phenylhydroxyamine aluminum salt, N-nitrosodiphenylamine, N-phenylnaphthylamine, ethylenediaminetetraacetic acid, 1,2-cyclohexanediaminetetraacetic acid, glycol etherdiaminetetraacetic acid, 2, 6-di-tert-butyl-4-methylphenol,
- the content of the polymerization inhibitor is preferably 0.01 to 20% by mass with respect to the total solid content of the resin composition of the present invention. It is more preferably 0.02 to 15% by mass, and even more preferably 0.05 to 10% by mass.
- polymerization inhibitor Only one type of polymerization inhibitor may be used, or two or more types may be used. When two or more polymerization inhibitors are used, the total is preferably within the above range.
- the resin composition of the present invention preferably contains an acid scavenger in order to reduce performance changes over time from exposure to heating.
- the acid scavenger refers to a compound that can scavenge the generated acid when present in the system, and is preferably a compound with low acidity and high pKa.
- the acid scavenger is preferably a compound having an amino group, preferably a primary amine, secondary amine, tertiary amine, ammonium salt, tertiary amide, etc. Primary amine, secondary amine, tertiary amine, ammonium salt are preferred, and secondary amines, tertiary amines and ammonium salts are more preferred.
- acid scavengers include compounds having an imidazole structure, diazabicyclo structure, onium structure, trialkylamine structure, aniline structure or pyridine structure, alkylamine derivatives having hydroxyl groups and/or ether bonds, and anilines having hydroxyl groups and/or ether bonds. Derivatives and the like can be mentioned preferably.
- the acid scavenger is a salt having a cation selected from ammonium, diazonium, iodonium, sulfonium, phosphonium, pyridinium, etc., and an anion of an acid less acidic than the acid generated by the acid generator. is preferred.
- acid scavengers having an imidazole structure include imidazole, 2,4,5-triphenylimidazole, benzimidazole, 2-phenylbenzimidazole and the like.
- Acid scavengers having a diazabicyclo structure include 1,4-diazabicyclo[2,2,2]octane, 1,5-diazabicyclo[4,3,0]non-5-ene, 1,8-diazabicyclo[5,4 ,0]undecar-7-ene and the like.
- Acid scavengers having an onium structure include tetrabutylammonium hydroxide, triarylsulfonium hydroxide, phenacylsulfonium hydroxide, sulfonium hydroxides having a 2-oxoalkyl group, specifically triphenylsulfonium hydroxide, tris ( t-butylphenyl)sulfonium hydroxide, bis(t-butylphenyl)iodonium hydroxide, phenacylthiophenium hydroxide, 2-oxopropylthiophenium hydroxide and the like.
- acid scavengers having a trialkylamine structure include tri(n-butyl)amine and tri(n-octyl)amine.
- Acid scavengers having an aniline structure include 2,6-diisopropylaniline, N,N-dimethylaniline, N,N-dibutylaniline and N,N-dihexylaniline.
- acid scavengers having a pyridine structure include pyridine and 4-methylpyridine.
- alkylamine derivatives having hydroxyl groups and/or ether bonds include ethanolamine, diethanolamine, triethanolamine, N-phenyldiethanolamine, tris(methoxyethoxyethyl)amine and the like.
- aniline derivatives having hydroxyl groups and/or ether bonds include N,N-bis(hydroxyethyl)aniline.
- preferred acid scavengers include ethanolamine, diethanolamine, triethanolamine, ethylamine, diethylamine, triethylamine, hexylamine, dodecylamine, cyclohexylamine, cyclohexylmethylamine, cyclohexyldimethylamine, aniline, N-methylaniline, N , N-dimethylaniline, diphenylamine, pyridine, butylamine, isobutylamine, dibutylamine, tributylamine, dicyclohexylamine, DBU (diazabicycloundecene), DABCO (1,4-diazabicyclo[2.2.2]octane), N,N-diisopropylethylamine, tetramethylammonium hydroxide, ethylenediamine, 1,5-diaminopentane, N-methylhexylamine, N-methyldicyclohexyl
- compositions according to the present invention may or may not contain an acid scavenger, but when it does, the content of the acid scavenger is usually from 0.001 to 0.001 based on the total solid content of the composition. 10% by mass, preferably 0.01 to 5% by mass.
- the acid generator/acid scavenger (molar ratio) is more preferably 5.0-200, still more preferably 7.0-150.
- the resin composition of the present invention may contain a filler.
- the filler is preferably thermally conductive.
- the filler may be electrically insulating, semiconducting, or electrically conductive.
- the degree of electrical insulation and conductivity is appropriately selected according to the design and purpose.
- the lower limit of the volume resistivity of the filler is preferably 1.0 ⁇ 10 11 ⁇ cm or more, more preferably 3.0 ⁇ 10 11 ⁇ cm or more. is more preferable, and 1.0 ⁇ 10 12 ⁇ cm or more is particularly preferable.
- the upper limit of the volume resistivity is not particularly limited, it is preferably 1.0 ⁇ 10 18 or less ⁇ cm, for example.
- the lower limit of the volume resistivity of the filler is not particularly limited, but practically it is 1.0 ⁇ 10 ⁇ 7 ⁇ cm or more.
- the upper limit of the volume resistivity is preferably less than 1.0 ⁇ 10 11 ⁇ cm.
- the thermal diffusivity of the filler is, for example, preferably 5.0 ⁇ 10 ⁇ 7 m 2 s ⁇ 1 or more, more preferably 1.0 ⁇ 10 ⁇ 6 m 2 s ⁇ 1 or more, and more preferably 2.0. It is more preferably 3.0 ⁇ 10 ⁇ 6 m 2 s ⁇ 1 or more, particularly preferably 3.0 ⁇ 10 ⁇ 6 m 2 s ⁇ 1 or more.
- the upper limit of the thermal diffusivity of the filler is not particularly limited, it is preferably 1.0 ⁇ 10 ⁇ 4 m 2 s ⁇ 1 or less, for example.
- the density of the filler is, for example, preferably 4.0 g/cm 3 or less, more preferably 3.0 g/cm 3 or less.
- the lower limit of the density of the filler is not particularly limited, it is preferably 1.0 g/cm 3 or more, for example.
- the density of the filler in this specification means the density of the solid content among the components constituting the filler. do.
- the filler contains an electrically insulating material.
- the electrically insulating filler material is, for example, an electrically insulating ceramic made of a nitrogen compound, an oxygen compound, a silicon compound, a boron compound, a carbon compound, or a composite compound thereof.
- Nitrogen compounds include, for example, boron nitride, aluminum nitride, and silicon nitride.
- oxygen compounds include metal oxides such as aluminum oxide (alumina), magnesium oxide (magnesia), zinc oxide, silicon oxide (silica), beryllium oxide, titanium oxide (titania), copper oxide and cuprous oxide.
- Silicon compounds and carbon compounds include silicon carbide.
- Boron compounds include, for example, metal borides such as titanium boride.
- carbon compounds are, for example, carbon matrix materials with predominantly ⁇ bonds, such as diamond.
- the composite compound include mineral ceramics such as magnesite (magnesium carbonate), perovskite (calcium titanate), talc, mica, kaolin, bentonite, and pyroferrite.
- the electrically insulating filler material may also be a metal hydroxide such as magnesium hydroxide or aluminum hydroxide.
- the filler material preferably contains at least one of ceramics made of nitrogen compounds, ceramics made of metal oxides, and metal hydroxides.
- the filler material preferably contains, for example, boron nitride, aluminum nitride, silicon nitride, aluminum oxide, magnesium oxide, zinc oxide, and at least one selected from the group consisting of beryllium oxide and aluminum hydroxide.
- the filler material particularly preferably contains at least one selected from the group consisting of boron nitride, aluminum nitride, silicon nitride, aluminum oxide, magnesium oxide, zinc oxide and beryllium oxide. More preferably, it contains at least one of silicon and aluminum oxide.
- boron nitride has c-BN (cubic crystal structure), w-BN (wurtzite structure), h-BN (hexagonal crystal structure), r-BN (rhombohedral crystal structure), t-BN (turbulent structure ) or any other structure.
- Boron nitride has a spherical shape and a scaly shape, and both can be used.
- the IX-3 series manufactured by Nippon Shokubai Co., Ltd., etc. can be suitably used.
- Examples of conductive filler materials include carbon substrate materials in which ⁇ bonds are dominant, such as graphite, carbon black, graphite, carbon fibers (pitch-based, PAN-based), carbon nanotubes (CNT), and carbon nanofibers (CNF). is mentioned.
- Such filler materials may be metals such as silver, copper, iron, nickel, aluminum and titanium, and alloys such as stainless steel (SUS).
- conductive metal oxides such as zinc oxide doped with different elements and conductive ceramics such as ferrite can also be used as such filler materials.
- the filler may have a structure in which semiconductor or conductive thermally conductive particles are coated or surface-treated with an electrically insulating material such as silica. According to such an aspect, it becomes easy to control the thermal conductivity and the electrical insulation individually, so that the adjustment of the thermal conductivity and the electrical insulation becomes easy.
- methods for forming a silica film on the surface include a water glass method and a sol-gel method.
- fillers can be used singly or in combination of two or more.
- the shape of the filler is not particularly limited, and various shapes can be used.
- the filler may be subjected to surface treatment such as silane coupling treatment, titanate coupling treatment, epoxy treatment, urethane treatment, and oxidation treatment.
- Surface treatment agents used for surface treatment include, for example, polyol, aluminum oxide, aluminum hydroxide, silica (silicon oxide), hydrated silica, alkanolamine, stearic acid, organosiloxane, zirconium oxide, hydrogen dimethicone, silane coupling agent, Titanate coupling agents and the like. Among them, silane coupling agents are preferred.
- the average particle size of the filler is preferably 30 ⁇ m or less, more preferably 20 ⁇ m or less, and even more preferably 10 ⁇ m or less.
- the average particle size of the filler is preferably 0.01 ⁇ m or more, more preferably 0.05 ⁇ m or more, still more preferably 0.1 ⁇ m or more, and particularly preferably 0.3 ⁇ m or more. preferable.
- the "average particle size" of the filler can be obtained by observing the filler in the polyimide-containing portion with a scanning electron microscope (SEM) and observing the portion (primary particles) where the particles of the filler are not aggregated.
- the average particle size can be calculated as the average diameter of the smallest enclosing circle for the apparent outline of each particle observed by SEM. Specifically, it can be described by the method described in Examples described later.
- the filler may contain a particulate mixture in which at least two types of particle groups with different particle sizes are mixed.
- the "particle size" of a certain particle group is also determined by the same method as the "particle size” of the filler. With this configuration, the smaller particles are embedded between the larger particles, reducing the spacing between the fillers and thus increasing the number of contact points compared to only single-diameter fillers, thus increasing the thermal conductivity. improve sexuality. For example, when two types of particle groups with different particle sizes are mixed, two peaks are observed in the particle size distribution of the filler containing these particle groups. Therefore, by confirming the number of peaks in the particle size distribution of the filler, it is possible to confirm how many types of particle groups with different particle diameters are included in the particulate mixture that is the filler.
- the peak particle size ratio (the ratio of particle sizes corresponding to peak apexes) between at least two peaks is preferably 1.5 to 50. .
- the lower limit is preferably 2 or more, more preferably 4 or more.
- the upper limit is preferably 40 or less, more preferably 20 or less. If the peak ratio is within the above range, it becomes easy for the small-diameter filler to occupy the space between the large-diameter fillers while preventing the large-diameter filler from becoming coarse particles.
- the peak intensity ratio of the peak with large particle size to the peak with small particle size is preferably 0.2 to 5.0.
- the lower limit is preferably 0.2 or more, more preferably 0.5 or more.
- the upper limit is preferably 5.0 or less, more preferably 3.0 or less.
- the filler content is preferably 10% by mass or more, more preferably 30% by mass or more, relative to the total solid content of the resin composition.
- the upper limit of the content is not particularly limited, it is preferably 90% by mass or less, more preferably 75% by mass or less, from the viewpoint of processability by lithography.
- the ratio of the particle group having a particle diameter of 0.5 to 15 ⁇ m in the total filler is preferably 50% by mass or more, more preferably 80% by mass or more.
- the upper limit of this ratio can be 100% by mass, or can be 99% by mass or less. This ratio is preferably 99% by mass or less, more preferably 95% by mass or less.
- the filler can be used singly or in combination of two or more.
- the total amount thereof is preferably within the above range.
- the resin composition of the present invention may contain various additives such as surfactants, higher fatty acid derivatives, ultraviolet absorbers, organic titanium compounds, antioxidants, Aggregation inhibitors, phenolic compounds, other polymer compounds, plasticizers and other auxiliaries (for example, antifoaming agents, flame retardants, etc.), etc., can be blended. Properties such as film physical properties can be adjusted by appropriately containing these components. These components are described, for example, from paragraph number 0183 of JP-A-2012-003225 (paragraph number 0237 of corresponding US Patent Application Publication No. 2013/0034812), paragraph of JP-A-2008-250074 The descriptions of numbers 0101 to 0104, 0107 to 0109, etc. can be referred to, and the contents thereof are incorporated herein. When these additives are blended, the total blending amount is preferably 3% by mass or less of the solid content of the resin composition of the present invention.
- additives such as surfactants, higher fatty acid derivatives, ultraviolet absorbers, organic titanium compounds, antioxidants
- surfactant various surfactants such as fluorine-based surfactants, silicone-based surfactants, and hydrocarbon-based surfactants can be used.
- the surfactant may be a nonionic surfactant, a cationic surfactant, or an anionic surfactant.
- the liquid properties (especially fluidity) when prepared as a coating liquid are further improved, and the uniformity of coating thickness and liquid saving are further improved. can do. That is, when a film is formed using a coating liquid to which a composition containing a surfactant is applied, the interfacial tension between the surface to be coated and the coating liquid is reduced, and the wettability to the surface to be coated is improved. , the coatability to the surface to be coated is improved. Therefore, it is possible to more preferably form a film having a uniform thickness with little unevenness in thickness.
- fluorosurfactants include Megafac F171, F172, F173, F176, F177, F141, F142, F143, F144, R30, F437, F475, F479, F482, F554, F780, RS-72-K (manufactured by DIC Corporation), Florado FC430, FC431, FC171, Novec FC4430, FC4432 (manufactured by 3M Japan Ltd.), Surflon S-382, SC-101, SC-103, SC-104, SC-105, SC1068, SC-381, SC-383, S393, KH-40 (Asahi Glass Co., Ltd.
- Fluorinated surfactants compounds described in paragraphs 0015 to 0158 of JP-A-2015-117327, compounds described in paragraphs 0117-0132 of JP-A-2011-132503 can also be used, the contents of which are incorporated herein.
- a block polymer can also be used as the fluorosurfactant, and specific examples thereof include compounds described in JP-A-2011-89090, the contents of which are incorporated herein.
- the fluorosurfactant has a repeating unit derived from a (meth)acrylate compound having a fluorine atom and 2 or more (preferably 5 or more) alkyleneoxy groups (preferably ethyleneoxy groups and propyleneoxy groups) (meta)
- a fluorine-containing polymer compound containing a repeating unit derived from an acrylate compound can also be preferably used, and the following compounds are also exemplified as fluorine-based surfactants used in the present invention.
- the weight average molecular weight of the above compound is preferably 3,000 to 50,000, more preferably 5,000 to 30,000.
- a fluorine-containing polymer having an ethylenically unsaturated group in a side chain can also be used as a fluorine-based surfactant. Specific examples include compounds described in paragraphs 0050 to 0090 and paragraphs 0289 to 0295 of JP-A-2010-164965, the contents of which are incorporated herein.
- Commercially available products include Megafac RS-101, RS-102 and RS-718K manufactured by DIC Corporation.
- the fluorine content in the fluorine-based surfactant is preferably 3-40% by mass, more preferably 5-30% by mass, and particularly preferably 7-25% by mass.
- a fluorosurfactant having a fluorine content within this range is effective in terms of uniformity of the thickness of the coating film and saving liquid, and has good solubility in the composition.
- silicone-based surfactants examples include Toray Silicone DC3PA, Toray Silicone SH7PA, Toray Silicone DC11PA, Toray Silicone SH21PA, Toray Silicone SH28PA, Toray Silicone SH29PA, Toray Silicone SH30PA, and Toray Silicone SH8400 (the above, Toray Dow Corning Co., Ltd.
- TSF-4440, TSF-4300, TSF-4445, TSF-4460, TSF-4452 manufactured by Momentive Performance Materials
- KP341, KF6001, KF6002 manufactured by Shin-Etsu Silicone Co., Ltd.
- BYK307, BYK323, and BYK330 manufactured by BYK-Chemie Co., Ltd.
- Hydrocarbon surfactants include, for example, Pionin A-76, Nucalgen FS-3PG, Pionin B-709, Pionin B-811-N, Pionin D-1004, Pionin D-3104, Pionin D-3605, Pionin D-6112, Pionin D-2104-D, Pionin D-212, Pionin D-931, Pionin D-941, Pionin D-951, Pionin E-5310, Pionin P-1050-B, Pionin P-1028-P, Pionin P-4050-T and the like (manufactured by Takemoto Oil & Fat Co., Ltd.), and the like.
- Nonionic surfactants include glycerol, trimethylolpropane, trimethylolethane and their ethoxylates and propoxylates (e.g., glycerol propoxylate, glycerol ethoxylate, etc.), polyoxyethylene lauryl ether, polyoxyethylene stearyl ether, Examples include polyoxyethylene oleyl ether, polyoxyethylene octylphenyl ether, polyoxyethylene nonylphenyl ether, polyethylene glycol dilaurate, polyethylene glycol distearate, and sorbitan fatty acid ester.
- cationic surfactants include organosiloxane polymer KP341 (manufactured by Shin-Etsu Chemical Co., Ltd.), (meth)acrylic acid-based (co)polymer Polyflow No. 75, No. 77, No. 90, No. 95 (manufactured by Kyoeisha Chemical Co., Ltd.), W001 (manufactured by Yusho Co., Ltd.), and the like.
- anionic surfactants include W004, W005, W017 (manufactured by Yusho Co., Ltd.), and Sandet BL (manufactured by Sanyo Kasei Co., Ltd.).
- the surfactant content is preferably 0.001 to 2.0% by mass, more preferably 0.005 to 1.0% by mass, based on the total solid content of the composition.
- the resin composition of the present invention is added with a higher fatty acid derivative such as behenic acid or behenic acid amide, and the resin composition of the present invention is dried in the process of drying after coating. may be unevenly distributed on the surface of the
- the content of the higher fatty acid derivative is preferably 0.1 to 10% by mass relative to the total solid content of the resin composition of the present invention. Only one type of higher fatty acid derivative may be used, or two or more types thereof may be used. When two or more higher fatty acid derivatives are used, the total is preferably within the above range.
- the composition of the present invention may contain an ultraviolet absorber.
- an ultraviolet absorber As the ultraviolet absorber, salicylate-based, benzophenone-based, benzotriazole-based, substituted acrylonitrile-based, and triazine-based ultraviolet absorbers can be used.
- salicylate-based UV absorbers include phenyl salicylate, p-octylphenyl salicylate, pt-butylphenyl salicylate, and the like.
- benzophenone-based UV absorbers examples include 2,2'-dihydroxy-4- Methoxybenzophenone, 2,2'-dihydroxy-4,4'-dimethoxybenzophenone, 2,2',4,4'-tetrahydroxybenzophenone, 2-hydroxy-4-methoxybenzophenone, 2,4-dihydroxybenzophenone, 2- and hydroxy-4-octoxybenzophenone.
- benzotriazole-based UV absorbers examples include 2-(2'-hydroxy-3',5'-di-tert-butylphenyl)-5-chlorobenzotriazole, 2-(2'-hydroxy-3 '-tert-butyl-5'-methylphenyl)-5-chlorobenzotriazole, 2-(2'-hydroxy-3'-tert-amyl-5'-isobutylphenyl)-5-chlorobenzotriazole, 2-( 2'-hydroxy-3'-isobutyl-5'-methylphenyl)-5-chlorobenzotriazole, 2-(2'-hydroxy-3'-isobutyl-5'-propylphenyl)-5-chlorobenzotriazole, 2 -(2'-hydroxy-3',5'-di-tert-butylphenyl)benzotriazole, 2-(2'-hydroxy-5'-methylphenyl)benzotriazole, 2-[2'-hydroxy-5' -(1,
- Examples of substituted acrylonitrile UV absorbers include ethyl 2-cyano-3,3-diphenylacrylate and 2-ethylhexyl 2-cyano-3,3-diphenylacrylate.
- examples of triazine-based UV absorbers include 2-[4-[(2-hydroxy-3-dodecyloxypropyl)oxy]-2-hydroxyphenyl]-4,6-bis(2,4-dimethylphenyl )-1,3,5-triazine, 2-[4-[(2-hydroxy-3-tridecyloxypropyl)oxy]-2-hydroxyphenyl]-4,6-bis(2,4-dimethylphenyl) -mono(hydroxyphenyl)triazine compounds such as 1,3,5-triazine, 2-(2,4-dihydroxyphenyl)-4,6-bis(2,4-dimethylphenyl)-1,3,5-triazine 2,4-bis(2-hydroxy-4-propyloxyphenyl)-6-(
- the above various ultraviolet absorbers may be used singly or in combination of two or more.
- the composition of the present invention may or may not contain an ultraviolet absorber, but when it does, the content of the ultraviolet absorber is 0.001% by mass with respect to the total solid mass of the composition of the present invention. It is preferably at least 1% by mass, more preferably at least 0.01% by mass and not more than 0.1% by mass.
- the resin composition of this embodiment may contain an organic titanium compound. By including the organic titanium compound in the resin composition, it is possible to form a resin layer having excellent chemical resistance even when cured at a low temperature.
- Organotitanium compounds that can be used include those in which organic groups are attached to titanium atoms through covalent or ionic bonds. Specific examples of organotitanium compounds are shown below in I) to VII): I) Titanium chelate compound: Among them, a titanium chelate compound having two or more alkoxy groups is more preferable because the storage stability of the resin composition is good and a good curing pattern can be obtained.
- titanium bis(triethanolamine) diisopropoxide titanium di(n-butoxide) bis(2,4-pentanedionate), titanium diisopropoxide bis(2,4-pentanedionate ), titanium diisopropoxide bis(tetramethylheptanedionate), titanium diisopropoxide bis(ethylacetoacetate), and the like.
- Tetraalkoxytitanium compounds for example titanium tetra(n-butoxide), titanium tetraethoxide, titanium tetra(2-ethylhexoxide), titanium tetraisobutoxide, titanium tetraisopropoxide, titanium tetramethoxide , titanium tetramethoxypropoxide, titanium tetramethylphenoxide, titanium tetra(n-nonyloxide), titanium tetra(n-propoxide), titanium tetrastearyloxide, titanium tetrakis[bis ⁇ 2,2-(allyloxymethyl) butoxide ⁇ ] and the like.
- Titanocene compounds for example, pentamethylcyclopentadienyltitanium trimethoxide, bis( ⁇ 5-2,4-cyclopentadien-1-yl)bis(2,6-difluorophenyl)titanium, bis( ⁇ 5-2, 4-cyclopentadien-1-yl)bis(2,6-difluoro-3-(1H-pyrrol-1-yl)phenyl)titanium and the like.
- Monoalkoxy titanium compounds for example, titanium tris(dioctylphosphate) isopropoxide, titanium tris(dodecylbenzenesulfonate) isopropoxide, and the like.
- Titanium oxide compounds for example, titanium oxide bis(pentanedionate), titanium oxide bis(tetramethylheptanedionate), phthalocyanine titanium oxide and the like.
- the organotitanium compound at least one compound selected from the group consisting of I) titanium chelate compounds, II) tetraalkoxytitanium compounds, and III) titanocene compounds provides better chemical resistance. It is preferable from the viewpoint of performance.
- titanium diisopropoxide bis(ethylacetoacetate), titanium tetra(n-butoxide) and bis( ⁇ 5-2,4-cyclopentadien-1-yl)bis(2,6-difluoro-3-(1H) -pyrrol-1-yl)phenyl)titanium is preferred.
- the blending amount is preferably 0.05 to 10 parts by mass, more preferably 0.1 to 2 parts by mass, per 100 parts by mass of the specific resin.
- the amount is 0.05 parts by mass or more, the resulting cured pattern exhibits good heat resistance and chemical resistance more effectively. Excellent.
- compositions of the present invention may contain antioxidants.
- an antioxidant By containing an antioxidant as an additive, it is possible to improve the elongation properties of the cured film and the adhesion to metal materials.
- Antioxidants include phenol compounds, phosphite ester compounds, thioether compounds and the like. Any phenolic compound known as a phenolic antioxidant can be used as the phenolic compound.
- Preferred phenolic compounds include hindered phenolic compounds.
- a compound having a substituent at a site adjacent to the phenolic hydroxy group (ortho position) is preferred.
- a substituted or unsubstituted alkyl group having 1 to 22 carbon atoms is preferable as the above substituent.
- the antioxidant is also preferably a compound having a phenol group and a phosphite ester group in the same molecule.
- Phosphorus-based antioxidants can also be suitably used as antioxidants.
- a phosphorus antioxidant tris[2-[[2,4,8,10-tetrakis(1,1-dimethylethyl)dibenzo[d,f][1,3,2]dioxaphosphepin-6 -yl]oxy]ethyl]amine, tris[2-[(4,6,9,11-tetra-tert-butyldibenzo[d,f][1,3,2]dioxaphosphepin-2-yl ) oxy]ethyl]amine, ethyl bis(2,4-di-tert-butyl-6-methylphenyl) phosphite, and the like.
- antioxidants examples include Adekastab AO-20, Adekastab AO-30, Adekastab AO-40, Adekastab AO-50, Adekastab AO-50F, Adekastab AO-60, Adekastab AO-60G, Adekastab AO-80. , ADEKA STAB AO-330 (manufactured by ADEKA Corporation) and the like.
- compounds described in paragraphs 0023 to 0048 of Japanese Patent No. 6268967 can also be used, the contents of which are incorporated herein.
- the composition of the present invention may also contain latent antioxidants, if desired.
- the latent antioxidant is a compound in which the site functioning as an antioxidant is protected with a protective group, and is heated at 100 to 250°C, or heated at 80 to 200°C in the presence of an acid/base catalyst.
- a compound that functions as an antioxidant by removing the protective group by the reaction is exemplified.
- latent antioxidants include compounds described in WO 2014/021023, WO 2017/030005, and JP 2017-008219, the contents of which are incorporated herein.
- Commercially available latent antioxidants include ADEKA Arkles GPA-5001 (manufactured by ADEKA Co., Ltd.).
- Examples of preferred antioxidants include 2,2-thiobis(4-methyl-6-t-butylphenol), 2,6-di-t-butylphenol and compounds of formula (3).
- R 5 represents a hydrogen atom or an alkyl group having 2 or more carbon atoms (preferably 2 to 10 carbon atoms), and R 6 represents alkylene having 2 or more carbon atoms (preferably 2 to 10 carbon atoms). represents a group.
- R 7 represents a monovalent to tetravalent organic group containing at least one of an alkylene group having 2 or more carbon atoms (preferably 2 to 10 carbon atoms), an oxygen atom and a nitrogen atom.
- k represents an integer of 1 to 4;
- the compound represented by formula (3) suppresses oxidative deterioration of the aliphatic groups and phenolic hydroxyl groups of the resin. In addition, metal oxidation can be suppressed by the antirust action on the metal material.
- R7 includes an alkyl group, a cycloalkyl group, an alkoxy group, an alkyl ether group, an alkylsilyl group, an alkoxysilyl group, an aryl group, an aryl ether group, a carboxyl group, a carbonyl group, an allyl group, a vinyl group, a heterocyclic group, -O-, -NH-, -NHNH-, combinations thereof, and the like, which may further have a substituent.
- Examples of compounds represented by general formula (3) include the following, but are not limited to the structures below.
- the amount of antioxidant to be added is preferably 0.1 to 10 parts by mass, more preferably 0.5 to 5 parts by mass, per 100 parts by mass of the specific resin.
- the addition amount 0.1 parts by mass or more By making the addition amount 0.1 parts by mass or more, the effect of improving elongation characteristics and adhesion to metal materials can be easily obtained even in a high-temperature and high-humidity environment.
- the interaction with the agent improves the sensitivity of the resin composition.
- Only one kind of antioxidant may be used, or two or more kinds thereof may be used. When two or more kinds are used, it is preferable that the total amount thereof is within the above range.
- the resin composition of the present embodiment may contain an anti-aggregation agent as necessary.
- Anti-aggregating agents include sodium polyacrylate and the like.
- the aggregation inhibitor may be used alone or in combination of two or more.
- the composition of the present invention may or may not contain an anti-aggregating agent, but when it is included, the content of the anti-aggregating agent is 0.01% by mass relative to the total solid mass of the composition of the present invention. It is preferably at least 10% by mass, more preferably at least 0.02% by mass and not more than 5% by mass.
- the resin composition of the present embodiment may contain a phenolic compound as necessary.
- phenolic compounds include Bis-Z, BisP-EZ, TekP-4HBPA, TrisP-HAP, TrisP-PA, BisOCHP-Z, BisP-MZ, BisP-PZ, BisP-IPZ, BisOCP-IPZ, BisP-CP, BisRS-2P, BisRS-3P, BisP-OCHP, methylenetris-FR-CR, BisRS-26X (these are trade names, manufactured by Honshu Chemical Industry Co., Ltd.), BIP-PC, BIR-PC, BIR-PTBP, BIR -BIPC-F (these are trade names, manufactured by Asahi Organic Chemicals Industry Co., Ltd.) and the like.
- one type of phenolic compound may be used alone, or two or more types may be used in combination.
- the composition of the present invention may or may not contain a phenolic compound, but if it does, the content of the phenolic compound is 0.01% by mass relative to the total solid mass of the composition of the present invention. It is preferably at least 30% by mass, more preferably at least 0.02% by mass and not more than 20% by mass.
- Other polymer compounds include siloxane resins, (meth)acrylic polymers obtained by copolymerizing (meth)acrylic acid, novolac resins, resole resins, polyhydroxystyrene resins, and copolymers thereof.
- Other polymer compounds may be modified products into which cross-linking groups such as methylol groups, alkoxymethyl groups and epoxy groups have been introduced.
- composition of the present invention may or may not contain other polymer compounds, but when it does, the content of the other polymer compound is 0 relative to the total solid mass of the composition of the present invention. It is preferably 0.01% by mass or more and 30% by mass or less, and more preferably 0.02% by mass or more and 20% by mass or less.
- the viscosity of the resin composition of the present invention can be adjusted by adjusting the solid content concentration of the resin composition. From the viewpoint of coating film thickness, it is preferably 1,000 mm 2 /s to 12,000 mm 2 /s, more preferably 2,000 mm 2 /s to 10,000 mm 2 /s, and 2,500 mm 2 /s to 8,000 mm. 2 /s is more preferred. If it is the said range, it will become easy to obtain a coating film with high uniformity. If it is 1,000 mm 2 /s or more , it is easy to apply the film with a film thickness required, for example, as an insulating film for rewiring. A coating is obtained.
- the water content of the resin composition of the present invention is preferably less than 2.0% by mass, more preferably less than 1.5% by mass, and even more preferably less than 1.0% by mass. If it is less than 2.0%, the storage stability of the resin composition is improved. Methods for maintaining the moisture content include adjusting the humidity in the storage conditions and reducing the porosity of the storage container during storage.
- the metal content of the resin composition of the present invention is preferably less than 5 mass ppm (parts per million), more preferably less than 1 mass ppm, and even more preferably less than 0.5 mass ppm.
- metals include sodium, potassium, magnesium, calcium, iron, copper, chromium, and nickel, but metals contained as complexes of organic compounds and metals are excluded. When multiple metals are included, the total of these metals is preferably within the above range.
- a raw material having a low metal content is selected as a raw material constituting the resin composition of the present invention.
- the raw material constituting the product is filtered through a filter, or the inside of the apparatus is lined with polytetrafluoroethylene or the like to perform distillation under conditions in which contamination is suppressed as much as possible.
- the resin composition of the present invention preferably has a halogen atom content of less than 500 ppm by mass, more preferably less than 300 ppm by mass, and less than 200 ppm by mass from the viewpoint of wiring corrosion. is more preferred.
- those present in the form of halogen ions are preferably less than 5 ppm by mass, more preferably less than 1 ppm by mass, and even more preferably less than 0.5 ppm by mass.
- Halogen atoms include chlorine and bromine atoms. It is preferable that the total amount of chlorine atoms and bromine atoms or chlorine ions and bromine ions is within the above ranges.
- ion exchange treatment and the like are preferably mentioned.
- a conventionally known container can be used as the container for the resin composition of the present invention.
- the inner wall of the container is a multi-layer bottle composed of 6 types and 6 layers of resin, and 6 types of resin are used. It is also preferred to use bottles with a seven-layer structure. Examples of such a container include the container described in JP-A-2015-123351.
- a cured product of this resin composition By curing the resin composition of the present invention, a cured product of this resin composition can be obtained.
- the cured product of the present invention is a cured product obtained by curing the resin composition of the present invention. Curing of the resin composition is preferably by heating, and the heating temperature is more preferably in the range of 120°C to 400°C, more preferably in the range of 140°C to 380°C, and 170°C. It is particularly preferred to be in the range of -350°C.
- the form of the cured product of the resin composition is not particularly limited, and can be selected from film-like, rod-like, spherical, pellet-like, etc. according to the application.
- this cured product is preferably in the form of a film.
- pattern processing of the resin composition can be used to form protective films on walls, form via holes for conduction, adjust impedance, capacitance or internal stress, and impart heat dissipation functions. You can also choose the shape.
- the film thickness of the cured product (film made of the cured product) is preferably 0.5 ⁇ m or more and 150 ⁇ m or less.
- the shrinkage ratio when the resin composition of the present invention is cured is preferably 50% or less, more preferably 45% or less, and even more preferably 40% or less.
- the imidization reaction rate of the cured product of the resin composition of the present invention is preferably 70% or higher, more preferably 80% or higher, and even more preferably 90% or higher. If it is 70% or more, a cured product having excellent mechanical properties may be obtained.
- the elongation at break of the cured product of the resin composition of the present invention is preferably 30% or more, more preferably 40% or more, and even more preferably 50% or more.
- the glass transition temperature (Tg) of the cured product of the resin composition of the present invention is preferably 180° C. or higher, more preferably 210° C. or higher, and even more preferably 230° C. or higher.
- the manufacturing method of the joined body of the present invention comprises a step of preparing a substrate A having a surface provided with a wiring terminal, a polyimide-containing portion forming step of forming a polyimide-containing portion on the surface of the substrate A provided with the wiring terminal, and a wiring terminal. and a bonding step of bonding the surface of the substrate A having the polyimide-containing portion and the surface of the substrate B having the wiring terminal, wherein the polyimide-containing portion is lower than the bonding temperature in the bonding step.
- the details of the substrate A, the substrate B, and each step in the method for producing a joined body of the present invention are as follows: , and preferred embodiments are also the same.
- the conjugate of the present invention is a conjugate obtained by the method for producing a conjugate of the present invention.
- Preferred aspects of the joined body are the same as the preferred aspects of the joined body in the above-described method for producing a joined body using the composition for forming a polyimide-containing portion of the present invention.
- a precipitate formed in the reaction mixture was removed by filtration to obtain a reaction liquid.
- the resulting reaction solution was added to 3 liters of ethyl alcohol to produce a precipitate consisting of crude polymer.
- the resulting crude polymer was collected by filtration and dissolved in 200 mL of tetrahydrofuran to obtain a crude polymer solution.
- the resulting crude polymer solution was dropped into 3 liters of water to precipitate the polymer, and the resulting precipitate was collected by filtration and dried in vacuo to obtain a powdery polymer P-1.
- the weight average molecular weight (Mw) of this polymer was measured and found to be 23,000.
- Polymer P-1 is a resin having the following structure. Subscripts in parentheses represent the molar ratio of each repeating unit.
- each component was mixed as described in Table 1 to prepare a uniform solution.
- the resulting solution was pressure filtered at a pressure of 0.4 MPa through a filter with a pore width of 20 ⁇ m to obtain a resin composition.
- the contents of the components described in the table were the amounts (parts by mass) described in the table.
- the description of "-" indicates that the composition does not contain the corresponding component.
- ⁇ B-1 Tetraethylene glycol dimethacrylate (manufactured by Arkema)
- ⁇ B-2 Light acrylate DCP-A (manufactured by Kyoeisha Chemical) *B-3: A compound having the following structure, the subscript in the parenthesis represents the number of repetitions.
- ⁇ B-4 NK Ester A-TMMT (manufactured by Shin-Nakamura Chemical)
- H-1 GBL ( ⁇ -butyrolactone)
- H-2 EL (ethyl lactate)
- H-3 NMP (N-methylpyrrolidone)
- H-4 DMSO (dimethyl sulfoxide)
- Pillar substrates having the following sizes and metal types were produced by plating. a) Pitch: 25 ⁇ m, copper pillar diameter: 10 ⁇ m, copper pillar height: 10 ⁇ m b) Pitch: 45 ⁇ m, copper/tin pillar diameter: 20 ⁇ m, copper/tin pillar height: 2/8 ⁇ mm, silicon wafer, copper, and tin are formed in this order.
- FIG. 6(a) is a schematic sectional view of the above a) and c).
- 10 denotes a substrate
- 12 denotes wiring terminals (pillars) made of copper.
- the arithmetic mean value of the pillar diameters d in each pillar is the pillar diameter, which is 10 ⁇ m in a) and 20 ⁇ m in c).
- the arithmetic average value of the pillar spacing p in each pillar is the pitch, which is 10 ⁇ m in a) and 20 ⁇ m in c).
- FIG. 6(a) the arithmetic mean value of the pillar height h of each pillar is the pillar height, which is 10 ⁇ m in a) and 10 ⁇ m in c).
- FIG. 6(b) is a schematic sectional view of the above b).
- 10 denotes a substrate and 12 denotes a wiring terminal.
- the wiring terminal 12 is formed of a pillar (conducting path) 14 made of tin and a pillar (electrode) 16 made of copper.
- the arithmetic mean value of the pillar diameters d in each pillar is the pillar diameter, which is 20 ⁇ m in b).
- FIG. 6(b) the arithmetic mean value of the pillar diameters d in each pillar is the pillar diameter, which is 20 ⁇ m in b).
- the arithmetic mean value of the pillar spacing p of each pillar is the pitch, which is 45 ⁇ m in b).
- the arithmetic mean value of the height h1 of the conduction path in each pillar is the tin pillar height, and in b) it is 8 ⁇ m.
- the arithmetic mean value of the electrode height h2 in each pillar is the copper pillar height, which is 2 ⁇ m in b).
- Example 15 ⁇ Production of substrate/substrate laminate (bonded body) (Example 15)>
- Example 15 after preparing two flattened substrates (substrate A and substrate B in the table), only the substrate B was coated with the composition on the surface with RAD3510F/12 (manufactured by LINTEC). Affixed the tape. After that, using DFG8560 (manufactured by DISCO), the back surface (the surface opposite to the composition coated surface) was polished to the substrate B, and after forming the wafer to a thickness of 150 ⁇ m, the substrate was bonded with a bonder 540 manufactured by EVG. Evaluation was carried out in the same manner as in Example 1, except that they were joined together.
- Example 17 ⁇ Production of substrate/substrate laminate (bonded body) (Example 17)>
- substrate preparation and evaluation were carried out in the same manner as in Example 1, except that composition 4 was used for substrate B and was applied to a film thickness of 10 ⁇ m.
- Example 18 ⁇ Production of substrate/substrate laminate (bonded body) (Example 18)>
- substrate preparation and evaluation were carried out in the same manner as in Example 1, except that the substrate d) was used as the substrate B.
- Example 20 ⁇ Production of substrate/substrate laminate (bonded body) (Example 20)>
- substrate preparation and evaluation were carried out in the same manner as in Example 2, except that the substrate B was preheated at 70°C and then bonding was started at 70°C.
- Substrate A (underlying substrate, daughter chip) 1x silicon wafer 1y substrate provided with polyimide containing portion 1z laminate 2 substrate B (mother chip) 2a surface of the second polyimide-containing portion of substrate B 2x silicon wafer 2y through-hole electrode 31 electrode (metal portion) 31a electrode tip 32 electrode (metal part) 4 Resin composition layer 4a Surface of polyimide-containing portion (before flattening) 4b Surface of polyimide-containing part (after flattening) 41 polyimide-containing portion 42 second polyimide-containing portion 8 electronic circuit region 10 substrate 12 wiring terminal A 14 conductive path 16 electrode 81 electronic circuit 90 semiconductor device 91 bonding film 93 solder electrode (bump) 94 underfill 95 sealing resin 96 wire bonding 97a substrate electrode 97b wire bonding pad 98 base substrate 99 solder ball 100 bonded body 101a to 101d semiconductor element 101 bonded body 102b to 102d through electrode 103a to 103e metal bump 105 rewiring layer 110, 110a, 110b resin layer 115
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Abstract
Description
ここで、樹脂の接着力によりドーターチップ1とマザーチップ2とが接着されているが、接着性向上の観点から、これら2つの基板の間の最大剥離抗力の向上が求められている。 In the element of the COC structure having the structure shown in FIG. 1, after the daughter chip 1 and the mother chip 2 are connected and fixed by the solder bumps 93, the underfill 94 is filled in the gap. Therefore, a fluid resin is used as the material forming the underfill, and the resin is cured and molded after being filled between the solder bumps.
Here, the daughter chip 1 and the mother chip 2 are bonded together by the adhesive strength of the resin, and from the viewpoint of improving the adhesiveness, it is desired to improve the maximum peeling resistance between these two substrates.
<1> 配線端子を備える面を有する基板Aを準備する工程、
上記基板Aの上記配線端子を備える面上にポリイミド含有部を形成するポリイミド含有部形成工程、
配線端子を備える面を有する基板Bを準備する工程、及び、
上記基板Aのポリイミド含有部を有する面と、上記基板Bにおける上記配線端子を備える面とを接合する接合工程、を含む接合体の製造方法において使用されるポリイミド含有部形成用組成物であって、
上記ポリイミド含有部は上記ポリイミド含有部形成用組成物から形成される部材であり、
上記ポリイミド含有部のガラス転移温度が、上記接合工程における接合温度より低い
ポリイミド含有部形成用組成物。
<2> ポリイミド前駆体及び溶剤を含む、<1>に記載のポリイミド含有部形成用組成物。
<3> マイグレーション抑制剤を更に含む、<1>又は<2>に記載のポリイミド含有部形成用組成物。
<4>上記ポリイミド含有部のガラス転移温度が350℃以下である、<1>~<3>のいずれか1つに記載のポリイミド含有部形成用組成物。
<5>上記ポリイミド含有部のガラス転移温度が、上記接合工程における接合温度より30℃以上低い、<1>~<4>のいずれか1つに記載のポリイミド含有部形成用組成物。
<6> 上記接合工程における接合温度が380℃以下である、<1>~<5>のいずれか1つに記載のポリイミド含有部形成用組成物。
<7> 上記基板Aの形態がウエハである、<1>~<6>のいずれか1つに記載のポリイミド含有部形成用組成物。
<8> 上記基板Bの形態がチップである、<1>~<7>のいずれか1つに記載のポリイミド含有部形成用組成物。
<9> 上記基板Bの形態がウエハである、<1>~<7>のいずれか1つに記載のポリイミド含有部形成用組成物。
<10> 接合工程において、ポリイミド含有部を備えた基板Aの温度が70℃以上に予熱されている、<1>~<9>のいずれか1つに記載のポリイミド含有部形成用組成物。
<11> 上記ポリイミド含有部形成工程と、上記接合工程との間に、基板Aのポリイミド含有部の表面を平坦化する平坦化工程を含む、<1>~<10>のいずれか1つに記載のポリイミド含有部形成用組成物。
<12> 上記平坦化工程が、物理研磨によって行なわれる、<11>に記載のポリイミド含有部形成用組成物。
<13> 上記平坦化工程が、化学研磨によって行なわれる、<11>に記載のポリイミド含有部形成用組成物。
<14> 上記接合工程において、上記基板Aのポリイミド含有部を有する面に含まれる電極と、上記基板Bにおける上記配線端子を備える面における電極とが直接接するように接合される、<1>~<13>のいずれか1つに記載のポリイミド含有部形成用組成物。
<15> 上記接合工程の前に、上記基板Bの上記配線端子を備える面上に第2のポリイミド含有部を形成する第2のポリイミド含有部形成工程を更に含む、<1>~<14>のいずれか1つに記載のポリイミド含有部形成用組成物。
<16> 感光性化合物を更に含む、<1>~<15>のいずれか1つに記載のポリイミド含有部形成用組成物。
<17> 上記ポリイミド含有部形成工程が、基板Aの上記配線端子を備える面上にポリイミド含有部形成用組成物を適用し、加熱することを含む、<1>~<16>のいずれか1つに記載のポリイミド含有部形成用組成物。
<18> 上記加熱における加熱温度が、375℃以下である、<17>に記載のポリイミド含有部形成用組成物。
<19> 配線端子を備える面を有する基板Aを準備する工程、
上記基板Aの上記配線端子を備える面上にポリイミド含有部を形成するポリイミド含有部形成工程、
配線端子を備える面を有する基板Bを準備する工程、及び、
上記基板Aのポリイミド含有部を有する面と、上記基板Bにおける上記配線端子を備える面とを接合する接合工程、を含み、
上記ポリイミド含有部のガラス転移温度が、上記接合工程における接合温度よりも低い温度である接合体の製造方法。
<20> <19>に記載の製造方法によって得られる接合体。
<21> <19>に記載の接合体の製造方法を含む、デバイスの製造方法。
<22> <20>に記載の接合体を含む、デバイス。 Examples of specific embodiments of the invention are provided below.
<1> A step of preparing a substrate A having a surface provided with wiring terminals;
a polyimide-containing portion forming step of forming a polyimide-containing portion on the surface of the substrate A provided with the wiring terminals;
A step of preparing a substrate B having a surface provided with wiring terminals;
A composition for forming a polyimide-containing portion used in a method for producing a bonded body, which includes a bonding step of bonding the surface of the substrate A having the polyimide-containing portion and the surface of the substrate B having the wiring terminal, ,
The polyimide-containing portion is a member formed from the polyimide-containing portion-forming composition,
A composition for forming a polyimide-containing portion, wherein the glass transition temperature of the polyimide-containing portion is lower than the bonding temperature in the bonding step.
<2> The composition for forming a polyimide-containing part according to <1>, containing a polyimide precursor and a solvent.
<3> The composition for forming a polyimide-containing part according to <1> or <2>, further comprising a migration inhibitor.
<4> The composition for forming a polyimide-containing portion according to any one of <1> to <3>, wherein the polyimide-containing portion has a glass transition temperature of 350° C. or lower.
<5> The composition for forming a polyimide-containing part according to any one of <1> to <4>, wherein the glass transition temperature of the polyimide-containing part is lower than the bonding temperature in the bonding step by 30° C. or more.
<6> The composition for forming a polyimide-containing portion according to any one of <1> to <5>, wherein the bonding temperature in the bonding step is 380° C. or less.
<7> The composition for forming a polyimide-containing portion according to any one of <1> to <6>, wherein the substrate A is in the form of a wafer.
<8> The composition for forming a polyimide-containing part according to any one of <1> to <7>, wherein the form of the substrate B is a chip.
<9> The composition for forming a polyimide-containing part according to any one of <1> to <7>, wherein the substrate B is in the form of a wafer.
<10> The composition for forming a polyimide-containing portion according to any one of <1> to <9>, wherein the temperature of the substrate A having the polyimide-containing portion is preheated to 70° C. or higher in the bonding step.
<11> Any one of <1> to <10>, including a planarization step of planarizing the surface of the polyimide-containing portion of the substrate A between the polyimide-containing portion forming step and the bonding step A composition for forming a polyimide-containing part as described above.
<12> The composition for forming a polyimide-containing portion according to <11>, wherein the planarization step is performed by physical polishing.
<13> The composition for forming a polyimide-containing portion according to <11>, wherein the planarization step is performed by chemical polishing.
<14> In the bonding step, the electrodes included in the surface of the substrate A having the polyimide-containing portion and the electrodes on the surface of the substrate B including the wiring terminals are bonded so as to be in direct contact with each other, <1> to The composition for forming a polyimide-containing portion according to any one of <13>.
<15><1> to <14>, further including a second polyimide-containing portion forming step of forming a second polyimide-containing portion on the surface of the substrate B provided with the wiring terminals before the bonding step. The composition for forming a polyimide-containing portion according to any one of .
<16> The composition for forming a polyimide-containing portion according to any one of <1> to <15>, further comprising a photosensitive compound.
<17> Any one of <1> to <16>, wherein the polyimide-containing portion forming step includes applying a composition for forming a polyimide-containing portion onto the surface of the substrate A provided with the wiring terminal and heating the composition. The composition for forming a polyimide-containing portion according to 1.
<18> The composition for forming a polyimide-containing part according to <17>, wherein the heating temperature in the heating is 375° C. or lower.
<19> A step of preparing a substrate A having a surface provided with wiring terminals;
a polyimide-containing portion forming step of forming a polyimide-containing portion on the surface of the substrate A provided with the wiring terminals;
A step of preparing a substrate B having a surface provided with wiring terminals;
A bonding step of bonding the surface of the substrate A having the polyimide-containing portion and the surface of the substrate B having the wiring terminal,
A method for producing a joined body, wherein the polyimide-containing portion has a glass transition temperature lower than the joining temperature in the joining step.
<20> A joined body obtained by the production method according to <19>.
<21> A method of manufacturing a device, including the method of manufacturing a joined body according to <19>.
<22> A device comprising the conjugate according to <20>.
以下に記載する本発明における構成要素の説明は、本発明の代表的な実施形態に基づいてなされることがあるが、本発明はそのような実施形態に限定されるものではない。
本明細書における基(原子団)の表記に於いて、置換および無置換を記していない表記は、置換基を有さないものと共に置換基を有するものをも包含するものである。例えば、「アルキル基」とは、置換基を有さないアルキル基(無置換アルキル基)のみならず、置換基を有するアルキル基(置換アルキル基)をも包含するものである。
本明細書において「露光」とは、特に断らない限り、光を用いた露光のみならず、電子線、イオンビーム等の粒子線を用いた描画も露光に含める。また、露光に用いられる光としては、一般的に、水銀灯の輝線スペクトル、エキシマレーザーに代表される遠紫外線、極紫外線(EUV光)、X線、電子線等の活性光線または放射線が挙げられる。
本明細書において、「~」を用いて表される数値範囲は、「~」の前後に記載される数値を下限値および上限値として含む範囲を意味する。
本明細書において、「(メタ)アクリレート」は、「アクリレート」および「メタクリレート」の双方、または、いずれかを表し、「(メタ)アクリル」は、「アクリル」および「メタクリル」の双方、または、いずれかを表し、「(メタ)アクリロイル」は、「アクリロイル」および「メタクリロイル」の双方、または、いずれかを表す。
本明細書において「工程」との語は、独立した工程だけではなく、他の工程と明確に区別できない場合であってもその工程の所期の作用が達成されれば、本用語に含まれる。
本明細書において、固形分とは、組成物の総質量に対する、溶剤を除く他の成分の質量百分率である。また、固形分濃度は、特に述べない限り25℃における濃度をいう。
本発明における温度は、特に述べない限り、25℃とする。
本明細書において、重量平均分子量(Mw)および数平均分子量(Mn)は、特に述べない限り、ゲル浸透クロマトグラフィ(GPC測定)に従い、ポリスチレン換算値として定義される。本明細書において、重量平均分子量(Mw)および数平均分子量(Mn)は、例えば、HLC-8220(東ソー(株)製)を用い、カラムとしてガードカラムHZ-L、TSKgel Super HZM-M、TSKgel Super HZ4000、TSKgel Super HZ3000、TSKgel Super HZ2000(東ソー(株)製)のいずれかを用いることによって求めることができる。溶離液は特に述べない限り、THF(テトラヒドロフラン)を用いて測定したものとする。また、検出は特に述べない限り、UV線(紫外線)の波長254nm検出器を使用したものとする。 The contents of the present invention will be described in detail below.
The description of the constituent elements of the present invention described below may be made based on representative embodiments of the present invention, but the present invention is not limited to such embodiments.
In the description of a group (atomic group) in the present specification, a description that does not describe substitution or unsubstituted includes not only those without substituents but also those with substituents. For example, an "alkyl group" includes not only an alkyl group having no substituent (unsubstituted alkyl group) but also an alkyl group having a substituent (substituted alkyl group).
As used herein, the term "exposure" includes not only exposure using light but also drawing using particle beams such as electron beams and ion beams, unless otherwise specified. The light used for exposure generally includes actinic rays or radiation such as emission line spectra of mercury lamps, far ultraviolet rays represented by excimer lasers, extreme ultraviolet rays (EUV light), X-rays and electron beams.
In the present specification, a numerical range represented by "to" means a range including the numerical values before and after "to" as lower and upper limits.
As used herein, "(meth)acrylate" represents both or either of "acrylate" and "methacrylate", and "(meth)acrylic" represents both "acrylic" and "methacrylic", or Either is represented, and "(meth)acryloyl" represents both or either of "acryloyl" and "methacryloyl".
As used herein, the term "process" includes not only an independent process, but also when the intended action of the process is achieved even if it cannot be clearly distinguished from other processes. .
As used herein, the solid content is the mass percentage of other components excluding the solvent relative to the total mass of the composition. Further, the solid content concentration refers to the concentration at 25° C. unless otherwise specified.
The temperature in the present invention is 25° C. unless otherwise specified.
In the present specification, weight average molecular weight (Mw) and number average molecular weight (Mn) are defined as polystyrene equivalent values according to gel permeation chromatography (GPC measurement), unless otherwise specified. In the present specification, the weight average molecular weight (Mw) and number average molecular weight (Mn) are, for example, HLC-8220 (manufactured by Tosoh Corporation), guard column HZ-L, TSKgel Super HZM-M, TSKgel It can be obtained by using either Super HZ4000, TSKgel Super HZ3000, or TSKgel Super HZ2000 (manufactured by Tosoh Corporation). Unless otherwise specified, THF (tetrahydrofuran) was used as the eluent for measurement. In addition, unless otherwise specified, a UV ray (ultraviolet) wavelength detector of 254 nm is used for detection.
本発明のポリイミド含有部形成用組成物は、配線端子を備える面を有する基板Aを準備する工程、上記基板Aの上記配線端子を備える面上にポリイミド含有部を形成するポリイミド含有部形成工程、配線端子を備える面を有する基板Bを準備する工程、及び、上記基板Aのポリイミド含有部を有する面と、上記基板Bにおける上記配線端子を備える面とを接合する接合工程、を含む接合体の製造方法において使用されるポリイミド含有部形成用組成物であって、上記ポリイミド含有部は上記ポリイミド含有部形成用組成物から形成される部材であり、上記ポリイミド含有部のガラス転移温度が、上記接合工程における接合温度より低い。 (Composition for forming polyimide-containing part)
The composition for forming a polyimide-containing portion of the present invention includes: a step of preparing a substrate A having a surface provided with wiring terminals; a step of forming a polyimide-containing portion on the surface of the substrate A provided with the wiring terminals; A joined body comprising: a step of preparing a substrate B having a surface provided with wiring terminals; A composition for forming a polyimide-containing part used in the manufacturing method, wherein the polyimide-containing part is a member formed from the composition for forming a polyimide-containing part, and the glass transition temperature of the polyimide-containing part is the above bonding Lower than the bonding temperature in the process.
具体的には、接合温度よりもポリイミド含有部のガラス転移温度(Tg)が低いという構成を採用することにより、接合時にポリイミド含有部の十分な流動性を確保することができるため、接合時の最大剥離抗力を増大することが可能となる。
本発明において接合温度とは、接合時のポリイミド含有部の温度であり、例えば接合に用いられる装置の設定温度とすることができる。 By using the composition for forming a polyimide-containing part of the present invention (hereinafter also simply referred to as "resin composition"), when bonding two substrates such as a wafer and a wafer or a wafer and a chip through the polyimide-containing part , it is possible to produce a bonded body with a high maximum peel force between the two substrates.
Specifically, by adopting a configuration in which the glass transition temperature (Tg) of the polyimide-containing portion is lower than the bonding temperature, it is possible to ensure sufficient fluidity of the polyimide-containing portion during bonding. It is possible to increase the maximum peel resistance.
In the present invention, the bonding temperature is the temperature of the polyimide-containing portion during bonding, and can be, for example, the set temperature of the device used for bonding.
ここで、上述のような2つの基板を接合する際には、接合時の位置合わせ精度が低く、各基板上の電極等の金属部同士の接合ずれが発生し、配線部分がむき出しになる部分が発生する場合がある。このような場合には、配線部分間のポリイミド含有部には耐電圧性能が求められる。
ここで、例えば、ポリイミド含有部形成用組成物にマイグレーション抑制剤を含有させた場合には、上記金属部からポリイミド含有部に金属が移行することを抑制することができ、耐電圧性能を向上させることができると考えられる。
以下、本発明の樹脂組成物の詳細について説明する。 Also, by setting the temperature at the time of bonding to a high temperature, the bonding time can be shortened, and the tact time of the bonding process can also be reduced.
Here, when joining two substrates as described above, the alignment accuracy at the time of joining is low, and the joining gap between the metal parts such as electrodes on each substrate occurs, and the wiring part is exposed. may occur. In such a case, the polyimide-containing portion between the wiring portions is required to have withstand voltage performance.
Here, for example, when the composition for forming the polyimide-containing portion contains a migration inhibitor, it is possible to suppress the migration of the metal from the metal portion to the polyimide-containing portion, thereby improving the withstand voltage performance. It is considered possible.
Details of the resin composition of the present invention are described below.
本発明のポリイミド含有部形成用組成物が用いられる接合体の製造方法は、配線端子を備える面を有する基板Aを準備する工程を含む。
準備工程においては、基板Aを公知の方法(例えば、シリコン基板等の基板に対するメッキなど)により製造してもよいし、購入等の手段により入手してもよい。 <Step of preparing substrate A>
A method for producing a bonded body using the composition for forming a polyimide-containing portion of the present invention includes a step of preparing a substrate A having a surface provided with wiring terminals.
In the preparation step, the substrate A may be manufactured by a known method (for example, plating on a substrate such as a silicon substrate), or may be obtained by means such as purchase.
基板Aは、配線端子を有する面を有する。
以下、基板Aにおける配線端子を、配線端子Aとも記載する。 [Substrate A]
The substrate A has a surface with wiring terminals.
The wiring terminals on the substrate A are also referred to as wiring terminals A hereinafter.
本発明において、ウエハとは半導体を含む基板をいい、複数の半導体等の要素により形成されたパネル等を含む概念である。
本発明において、チップとは、ダイシング等により形成される半導体を含む個片をいい、片面チップであってもよいし、両面チップであってもよい。 The form of the substrate A may be either a wafer or a chip, but being a wafer is also one of the preferred aspects of the present invention.
In the present invention, a wafer means a substrate containing a semiconductor, and is a concept including a panel or the like formed of a plurality of elements such as semiconductors.
In the present invention, a chip means an individual piece containing a semiconductor formed by dicing or the like, and may be a single-sided chip or a double-sided chip.
基板Aの厚さは、0.1~5mmが好ましく、0.2~1mmがより好ましい。
基板Aにおける配線端子Aは、ピラー電極であることが好ましい。
また、上記配線端子Aは、金属を含むことが好ましく、錫(Sn)、金(Au)、銀(Ag)、銅(Cu)、アルミニウム(Al)、タングステン(W)、パラジウム(Pd)、白金(Pt)、コバルト(Co)、ニッケル(Ni)、亜鉛(Zn)、ルテニウム(Ru)、イリジウム(Ir)、ロジウム(Rh)、鉛(Pb)、ビスマス(Bi)及び、インジウム(In)よりなる群から選ばれた少なくとも1種の金属を含むことがより好ましく、銅、錫及びニッケルよりなる群から選ばれた少なくとも1種の金属を含むことがより好ましい。本明細書では、金属X又はその金属を含む合金の少なくとも一方を含むことを総称して単に「金属Xを含む」と記載する。なお、合金は上記に例示した以外の元素を含んでいてもよい。例えば銅合金はケイ素原子を含んでコルソン合金を形成していてもよい。また、不可避的に溶存する酸素や、析出時に混在する原料化合物の有機残基等が存在していてもよい。
上記配線端子Aは、複数の異なる部材を含んでなる配線端子であってもよい。
例えば、基板上に銅、銀、金、又はこれらのいずれかまたは複数を含む合金等の金属からなる電極として用いられる部分(以下、「電極」ともいう)を有し、銅等の電極上に、ニッケル、錫、鉛、又はこれらのいずれかまたは複数を含む合金等の金属からなるはんだとして用いられる部分(以下、「導通路」ともいう)が形成されており、電極と、導通路とが直列に存在することにより1つの配線端子Aを形成していてもよい。
これらの中でも、上記配線端子Aは、銅を含む部材、及び、錫を含む部材を少なくとも含んでなる配線端子Aであることが好ましい。このような配線端子Aを備える面を有する基板Aの例としては、本願実施例において使用した基板b)の例が挙げられる。基板b)においては、銅からなる電極の上に、錫からなる導通路が形成されている。 The shape of the substrate A is not particularly limited, but examples thereof include a polygonal plate shape, a disc shape, and a polyhedron shape.
The thickness of the substrate A is preferably 0.1-5 mm, more preferably 0.2-1 mm.
The wiring terminal A on the substrate A is preferably a pillar electrode.
Further, the wiring terminal A preferably contains a metal such as tin (Sn), gold (Au), silver (Ag), copper (Cu), aluminum (Al), tungsten (W), palladium (Pd), Platinum (Pt), Cobalt (Co), Nickel (Ni), Zinc (Zn), Ruthenium (Ru), Iridium (Ir), Rhodium (Rh), Lead (Pb), Bismuth (Bi) and Indium (In) More preferably, it contains at least one metal selected from the group consisting of, more preferably at least one metal selected from the group consisting of copper, tin and nickel. In this specification, inclusion of at least one of metal X or an alloy containing that metal is generically simply referred to as "comprising metal X." The alloy may contain elements other than those exemplified above. For example, a copper alloy may contain silicon atoms to form a Corson alloy. In addition, oxygen that is inevitably dissolved, organic residues of the raw material compound mixed during precipitation, and the like may be present.
The wiring terminal A may be a wiring terminal comprising a plurality of different members.
For example, a substrate has a portion that is used as an electrode (hereinafter also referred to as an “electrode”) made of a metal such as copper, silver, gold, or an alloy containing one or more of these, and on the electrode such as copper , nickel, tin, lead, or an alloy containing one or more of these metals (hereinafter also referred to as a “conducting path”) that is used as solder is formed, and the electrode and the conducting path are formed. One wiring terminal A may be formed by existing in series.
Among these, the wiring terminal A preferably includes at least a member containing copper and a member containing tin. An example of the substrate A having a surface provided with such wiring terminals A is the substrate b) used in the examples of the present application. In substrate b), conductive paths made of tin are formed on electrodes made of copper.
電極に用いられる金属としては、接合工程でも溶融しない金属を用いることが好ましい。電極に用いられる金属の融点としては、500℃以上であることが好ましく、700℃以上であることがより好ましく、800℃以上であることがさらに好ましい。上限は特にないが、例えば、3000℃以下とすることが好ましい。
導通路に用いられる材料は特に限定されないが、錫、鉛、銀、銅、亜鉛、ビスマス、またはインジウム、あるいはこれらの合金が挙げられる。なかでも、本発明においては錫または錫合金(錫を含む金属)のはんだが好ましい。最近では鉛を使わない無鉛はんだの技術も進歩しており、そのような材料を選定することも好ましい。
導通路に用いられる金属としては、接合工程で溶融する金属が好ましい。導通路に用いられる金属の融点は400℃以下であることが好ましく、300℃以下であることがより好ましく、250℃以下であることがさらに好ましい。上記融点の下限は、室温で固体であれば下限は特に限定されないが、例えば、150℃以上であることが好ましい。
また、配線端子Aは基板A上に複数個形成されていることが好ましい。 Materials used for the electrodes are not particularly limited, but include tin, gold, silver, copper, aluminum, tungsten, palladium, platinum, cobalt, nickel, zinc, ruthenium, iridium, rhodium, and alloys thereof. Among them, the electrode is preferably a metal containing copper, a metal containing aluminum, a metal containing tungsten, a metal containing nickel, or a metal containing gold, more preferably a metal containing copper, and still more preferably copper.
As the metal used for the electrodes, it is preferable to use a metal that does not melt even in the joining process. The melting point of the metal used for the electrodes is preferably 500° C. or higher, more preferably 700° C. or higher, and even more preferably 800° C. or higher. Although there is no particular upper limit, it is preferably 3000° C. or less, for example.
The material used for the conductive path is not particularly limited, but includes tin, lead, silver, copper, zinc, bismuth, or indium, or alloys thereof. Among them, solder of tin or a tin alloy (a metal containing tin) is preferable in the present invention. Recently, the technology of lead-free solder, which does not use lead, is also progressing, and it is also preferable to select such a material.
As the metal used for the conducting path, a metal that melts in the joining process is preferable. The melting point of the metal used for the conducting paths is preferably 400° C. or lower, more preferably 300° C. or lower, and even more preferably 250° C. or lower. The lower limit of the melting point is not particularly limited as long as it is solid at room temperature.
Moreover, it is preferable that a plurality of wiring terminals A are formed on the substrate A. As shown in FIG.
基板Aがウエハである場合のサイズとしては、直径(基板Aが円形でない場合は最大径)を100mm以上とすることができる。また、大型の基板としては、例えば、200mm以上であることが好ましく、250mm以上であることがより好ましい。上限は特にないが、2,000mm以下であることが好ましい。
基板Aがチップである場合のサイズとしては、直径(基板Aが円形でない場合は最大径)を7mm以上とすることが好ましく、10mm以上がより好ましく、20mm以上が更に好ましい。上限としては、例えば、50mm以下であることが好ましく、40mm以下であることがより好ましく、30mm以下であることが更に好ましい。 The material used for the substrate A is not particularly limited, and includes semiconductor fabrication substrates such as silicon, silicon nitride, polysilicon, silicon oxide, and amorphous silicon, quartz, glass, optical films, ceramic materials, deposited films, magnetic films, reflective films, Metal substrates such as Ni, Cu, Cr, and Fe, paper, SOG (Spin On Glass), TFT (Thin Film Transistor) array substrates, plasma display panel (PDP) electrode plates, etc. are not particularly limited. The substrate may be provided with a layer such as an adhesion layer or an oxide layer made of hexamethyldisilazane (HMDS) or the like on the surface. In the present invention, a semiconductor fabrication substrate is particularly preferred, and a silicon substrate (silicon wafer) is more preferred. Substrate A may have an electronic circuit area containing electronic circuits. Moreover, the electronic circuit may have an element such as a semiconductor. Moreover, it is preferable that the electronic circuit is electrically connected to the wiring terminal A.
When the substrate A is a wafer, the diameter (maximum diameter if the substrate A is not circular) can be 100 mm or more. Moreover, as a large substrate, for example, it is preferably 200 mm or more, and more preferably 250 mm or more. Although there is no particular upper limit, it is preferably 2,000 mm or less.
When the substrate A is a chip, the diameter (maximum diameter if the substrate A is not circular) is preferably 7 mm or more, more preferably 10 mm or more, and even more preferably 20 mm or more. The upper limit is, for example, preferably 50 mm or less, more preferably 40 mm or less, and even more preferably 30 mm or less.
本発明のポリイミド含有部形成用組成物が用いられる接合体の製造方法は、上記基板Aの上記配線端子(配線端子A)を備える面上にポリイミド含有部を形成するポリイミド含有部形成工程を含む。
ポリイミド含有部は、上記配線端子Aと接するように形成されることが好ましく、配線端子Aと配線端子Aの間の凹部を充填するように形成されることがより好ましい。
また、ポリイミド含有部は、上記配線端子Aの少なくとも一部の上に形成されればよいが、例えば、上記配線端子Aの全ての上に形成される態様も、本発明の好ましい態様の1つである。
上記ポリイミド含有部形成工程は、基板Aの上記配線端子を備える面上にポリイミド含有部形成用組成物を適用し、加熱することを含むことが好ましい。適用及び加熱の詳細については後述する。 <Polyimide-containing part forming process>
A method for producing a bonded body using the composition for forming a polyimide-containing portion of the present invention includes a polyimide-containing portion forming step of forming a polyimide-containing portion on the surface of the substrate A provided with the wiring terminal (wiring terminal A). .
The polyimide-containing portion is preferably formed so as to be in contact with the wiring terminal A, and more preferably formed so as to fill the concave portion between the wiring terminals A.
In addition, the polyimide-containing portion may be formed on at least a part of the wiring terminals A, but for example, an embodiment in which the polyimide-containing portion is formed on all of the wiring terminals A is also one of the preferred embodiments of the present invention. is.
The polyimide-containing portion forming step preferably includes applying a composition for forming a polyimide-containing portion onto the surface of the substrate A provided with the wiring terminals and heating. Application and heating details are described below.
上記ポリイミド含有部は上記ポリイミド含有部形成用組成物から形成される部材であり、上記ポリイミド含有部形成用組成物を少なくとも加熱して得られる部材であることが好ましい。 [Polyimide-containing portion]
The polyimide-containing portion is a member formed from the polyimide-containing portion-forming composition, and is preferably a member obtained by at least heating the polyimide-containing portion-forming composition.
ポリイミド以外の成分としては、後述の樹脂組成物に含まれるポリイミド及びその前駆体以外の成分、及び、その成分が加熱により変性(分解、重合、構造変化等)した成分等が挙げられる。 The polyimide-containing portion is a member containing polyimide, and may further contain components other than polyimide.
Examples of components other than polyimide include components other than polyimide and its precursor contained in the resin composition described later, and components modified by heating (decomposition, polymerization, structural change, etc.).
上記ガラス転移温度の下限は特に限定されないが、耐熱性の観点からは200℃以上であることが好ましい。
最大剥離抗力を増大する観点からは、ポリイミド含有部のガラス転移温度は、接合工程における接合温度よりも30℃以上低いことが好ましく、50℃以上低いことがより好ましく、70℃以上低いことが更に好ましい。
また、ポリイミド含有部のガラス転移温度は、接合工程における接合温度よりも30℃以上高いことが好ましい。 The glass transition temperature of the polyimide-containing portion may be lower than the bonding temperature in the bonding step, but is preferably 350° C. or lower, more preferably 320° C. or lower, and even more preferably 300° C. or lower.
Although the lower limit of the glass transition temperature is not particularly limited, it is preferably 200° C. or higher from the viewpoint of heat resistance.
From the viewpoint of increasing the maximum peel resistance, the glass transition temperature of the polyimide-containing portion is preferably 30 ° C. or more lower than the bonding temperature in the bonding step, more preferably 50 ° C. or more, and further preferably 70 ° C. or more. preferable.
Also, the glass transition temperature of the polyimide-containing portion is preferably 30° C. or more higher than the bonding temperature in the bonding step.
上記ポリイミド含有部の熱拡散率は、例えば、ポリイミド含有部がフィラーを含む場合はフィラーの材料種、フィラーの粒子径(フィラーを2種以上含む場合はその粒子径の組み合わせ)、フィラーの熱拡散率、フィラーの含有量、ポリイミドの構造、ポリイミドの熱拡散率、ポリイミドの含有量等の設計により調整することができる。 The thermal diffusivity of the polyimide-containing portion in the joined body described later is preferably 2.0×10 −7 m 2 s −1 or more, and more preferably 3.0×10 −7 m 2 s −1 or more. More preferably, it is 5.0×10 −7 m 2 s −1 or more.
The thermal diffusivity of the polyimide-containing part is, for example, when the polyimide-containing part contains a filler, the material type of the filler, the particle size of the filler (a combination of the particle sizes when two or more types of filler are included), and the thermal diffusion of the filler. It can be adjusted by designing factors such as the rate, content of filler, structure of polyimide, thermal diffusivity of polyimide, content of polyimide, and the like.
ポリイミド含有部形成工程は、本発明のポリイミド含有部形成用組成物(樹脂組成物)を、上記基板Aの上記配線端子Aを有する面上に適用すること(適用工程)を含む工程であることが好ましい。 [Applied process]
The polyimide-containing portion forming step is a step including applying the polyimide-containing portion forming composition (resin composition) of the present invention onto the surface of the substrate A having the wiring terminal A (application step). is preferred.
また、あらかじめ仮支持体上に上記付与方法によって付与して形成した塗膜を、基材上に転写する方法を適用することもできる。
転写方法に関しては特開2006-023696号公報の段落0023、0036~0051や、特開2006-047592号公報の段落0096~0108に記載の作製方法を本発明においても好適に用いることができる。
また、基材の端部において余分な膜の除去を行なう工程を行なってもよい。このような工程の例には、エッジビードリンス(EBR)、バックリンスなどが挙げられる。
また樹脂組成物を基材に塗布する前に基材を種々の溶剤を塗布し、基材の濡れ性を向上させた後に樹脂組成物を塗布するプリウェット工程を採用しても良い。 Means for applying the resin composition onto the substrate A include dip coating, air knife coating, curtain coating, wire bar coating, gravure coating, extrusion coating, spray coating, spin coating, A slit coat method, an inkjet method, and the like are exemplified. From the viewpoint of uniformity of film thickness, spin coating, slit coating, spray coating, or inkjet method is more preferable, and spin coating from the viewpoint of uniformity of film thickness and productivity. and slit coating methods are preferred. A film having a desired thickness can be obtained by adjusting the solid content concentration and application conditions of the resin composition according to the method. In addition, the coating method can be appropriately selected depending on the shape of the substrate. Spin coating, spray coating, inkjet method, etc. are preferable for circular substrates such as wafers, and slit coating and spray coating are preferable for rectangular substrates. method, inkjet method, and the like are preferred. In the case of the spin coating method, for example, it can be applied at a rotation speed of 500 to 3,500 rpm for about 10 seconds to 3 minutes.
Alternatively, a method of transferring a coating film, which is formed on a temporary support in advance by the application method described above, onto a base material can be applied.
As for the transfer method, the manufacturing methods described in paragraphs 0023 and 0036 to 0051 of JP-A-2006-023696 and paragraphs 0096-0108 of JP-A-2006-047592 can also be preferably used in the present invention.
Also, a step of removing excess film at the edge of the substrate may be performed. Examples of such processes include edge bead rinsing (EBR), back rinsing, and the like.
A pre-wetting step may also be employed in which the substrate is coated with various solvents before applying the resin composition to the substrate to improve the wettability of the substrate, and then the resin composition is applied.
乾燥工程における乾燥温度は50~150℃であることが好ましく、70℃~130℃がより好ましく、90℃~110℃が更に好ましい。また、減圧により乾燥を行っても良い。乾燥時間としては、30秒~20分が例示され、1分~10分が好ましく、2分~7分がより好ましい。 Further, when the resin composition contains a solvent, after applying the resin composition to the base material A, a step (drying step) of drying the member (hereinafter also simply referred to as "film") made of the resin composition is performed. may contain.
The drying temperature in the drying step is preferably 50 to 150°C, more preferably 70 to 130°C, even more preferably 90 to 110°C. Moreover, you may dry by pressure reduction. The drying time is exemplified from 30 seconds to 20 minutes, preferably from 1 minute to 10 minutes, more preferably from 2 minutes to 7 minutes.
ポリイミド含有部形成工程は形成された後、その表面が平坦化されてもよい。平坦化の詳細は後述する。なお、パターニングを行なった場合、現像等によって除去された部分の厚みは後述する膜厚差(T1-T2)の算出に用いないこととする。 The polyimide-containing portion forming step may include a step of patterning the member made of the resin composition. When a resin composition containing a photosensitive compound such as a photopolymerization initiator, which will be described later, is used, this patterning can be performed by exposure and development.
After forming the polyimide-containing portion, the surface may be planarized. Details of the planarization will be described later. Note that when patterning is performed, the thickness of the portion removed by development or the like is not used for calculating the film thickness difference (T1-T2) described later.
上記膜は、膜を選択的に露光する露光工程に供されてもよい。
すなわち、本発明のポリイミド含有部形成用組成物に係るポリイミド含有部(以下、「硬化物」)ともいう。)の製造方法は、適用工程により形成された膜を選択的に露光する露光工程を含んでもよい。
選択的に露光するとは、膜の一部を露光することを意味している。また、選択的に露光することにより、膜には露光された領域(露光部)と露光されていない領域(非露光部)が形成される。
露光量は、本発明の樹脂組成物を硬化できる限り特に定めるものではないが、例えば、波長365nmでの露光エネルギー換算で50~10,000mJ/cm2が好ましく、200~8,000mJ/cm2がより好ましい。 [Exposure process]
The film may be subjected to an exposure step that selectively exposes the film.
That is, it is also referred to as a polyimide-containing portion (hereinafter, “cured product”) related to the composition for forming a polyimide-containing portion of the present invention. ) may include an exposure step of selectively exposing the film formed by the applying step.
Selectively exposing means exposing a portion of the film. Also, by selectively exposing, the film is formed with exposed regions (exposed portions) and non-exposed regions (non-exposed portions).
The amount of exposure is not particularly defined as long as the resin composition of the present invention can be cured . is more preferred.
また、露光の方式は特に限定されず、本発明の樹脂組成物からなる膜の少なくとも一部が露光される方式であればよいが、フォトマスクを使用した露光、レーザーダイレクトイメージング法による露光等が挙げられる。 In relation to the light source, the exposure wavelength is (1) semiconductor laser (wavelength 830 nm, 532 nm, 488 nm, 405 nm, 375 nm, 355 nm etc.), (2) metal halide lamp, (3) high pressure mercury lamp, g-line (wavelength 436 nm), h-line (wavelength 405 nm), i-line (wavelength 365 nm), broad (three wavelengths of g, h, i-line), (4) excimer laser, KrF excimer laser (wavelength 248 nm), ArF excimer laser (wavelength 193 nm) ), F2 excimer laser ( wavelength 157 nm), (5) extreme ultraviolet; EUV (wavelength 13.6 nm), (6) electron beam, (7) YAG laser second harmonic 532 nm, third harmonic 355 nm, etc. mentioned. For the resin composition of the present invention, exposure with a high-pressure mercury lamp is particularly preferred, and exposure with i-line is particularly preferred. Thereby, particularly high exposure sensitivity can be obtained.
The method of exposure is not particularly limited as long as at least a part of the film made of the resin composition of the present invention is exposed. Exposure using a photomask, exposure by a laser direct imaging method, etc. mentioned.
上記膜は、露光後に加熱する工程(露光後加熱工程)に供されてもよい。
すなわち、本発明のポリイミド含有部形成用組成物に係る硬化物の製造方法は、露光工程により露光された膜を加熱する露光後加熱工程を含んでもよい。
露光後加熱工程は、露光工程後、現像工程前に行うことができる。
露光後加熱工程における加熱温度は、50℃~140℃であることが好ましく、60℃~120℃であることがより好ましい。
露光後加熱工程における加熱時間は、30秒間~300分間が好ましく、1分間~10分間がより好ましい。
露光後加熱工程における昇温速度は、加熱開始時の温度から最高加熱温度まで1~12℃/分が好ましく、2~10℃/分がより好ましく、3~10℃/分が更に好ましい。
また、昇温速度は加熱途中で適宜変更してもよい。
露光後加熱工程における加熱手段としては、特に限定されず、公知のホットプレート、オーブン、赤外線ヒーター等を用いることができる。
また、加熱に際し、窒素、ヘリウム、アルゴンなどの不活性ガスを流す等により、低酸素濃度の雰囲気で行うことも好ましい。 <Post-exposure heating process>
The film may be subjected to a step of heating after exposure (post-exposure heating step).
That is, the method for producing a cured product of the composition for forming a polyimide-containing portion of the present invention may include a post-exposure heating step of heating the film exposed in the exposure step.
The post-exposure heating step can be performed after the exposure step and before the development step.
The heating temperature in the post-exposure heating step is preferably 50°C to 140°C, more preferably 60°C to 120°C.
The heating time in the post-exposure heating step is preferably 30 seconds to 300 minutes, more preferably 1 minute to 10 minutes.
The heating rate in the post-exposure heating step is preferably 1 to 12° C./min, more preferably 2 to 10° C./min, still more preferably 3 to 10° C./min, from the temperature at the start of heating to the maximum heating temperature.
Also, the rate of temperature increase may be appropriately changed during heating.
The heating means in the post-exposure heating step is not particularly limited, and known hot plates, ovens, infrared heaters and the like can be used.
Moreover, it is also preferable to carry out the heating in an atmosphere of low oxygen concentration by, for example, flowing an inert gas such as nitrogen, helium or argon.
露光後の上記膜は、現像液を用いて現像してパターンを形成する現像工程に供されてもよい。
すなわち、本発明のポリイミド含有部形成用組成物に係る硬化物の製造方法は、露光工程により露光された膜を現像液を用いて現像してパターンを形成する現像工程を含んでもよい。現像を行うことにより、膜の露光部及び非露光部のうち一方が除去され、パターンが形成される。
ここで、膜の非露光部が現像工程により除去される現像をネガ型現像といい、膜の露光部が現像工程により除去される現像をポジ型現像という。 <Development process>
The film after exposure may be subjected to a development step in which the film is developed using a developer to form a pattern.
That is, the method for producing a cured product of the composition for forming a polyimide-containing portion of the present invention may include a development step of developing a film exposed in the exposure step with a developer to form a pattern. By performing development, one of the exposed and non-exposed portions of the film is removed to form a pattern.
Here, development in which the unexposed portion of the film is removed by the development process is called negative development, and development in which the exposed portion of the film is removed by the development process is called positive development.
現像工程において用いられる現像液としては、アルカリ水溶液、又は、有機溶剤を含む現像液が挙げられる。 [Developer]
Examples of the developer used in the development process include an aqueous alkaline solution and a developer containing an organic solvent.
他の成分としては、例えば、公知の界面活性剤や公知の消泡剤等が挙げられる。 The developer may further contain other components.
Other components include, for example, known surfactants and known antifoaming agents.
現像液の供給方法は、所望のパターンを形成できれば特に制限は無く、膜が形成された基材を現像液に浸漬する方法、基材上に形成された膜にノズルを用いて現像液を供給するパドル現像、または、現像液を連続供給する方法がある。ノズルの種類は特に制限は無く、ストレートノズル、シャワーノズル、スプレーノズル等が挙げられる。
現像液の浸透性、非画像部の除去性、製造上の効率の観点から、現像液をストレートノズルで供給する方法、又はスプレーノズルにて連続供給する方法が好ましく、画像部への現像液の浸透性の観点からは、スプレーノズルで供給する方法がより好ましい。
また、現像液をストレートノズルにて連続供給後、基材をスピンし現像液を基材上から除去し、スピン乾燥後に再度ストレートノズルにて連続供給後、基材をスピンし現像液を基材上から除去する工程を採用してもよく、この工程を複数回繰り返しても良い。
また現像工程における現像液の供給方法としては、現像液が連続的に基材に供給され続ける工程、基材上で現像液が略静止状態で保たれる工程、基材上で現像液を超音波等で振動させる工程及びそれらを組み合わせた工程などが採用可能である。 [Method of supplying developer]
The method of supplying the developer is not particularly limited as long as the desired pattern can be formed, and a method of immersing the substrate on which the film is formed in the developer, and supplying the developer to the film formed on the substrate using a nozzle. There is a method of puddle development or a method of continuously supplying developer. The type of nozzle is not particularly limited, and straight nozzles, shower nozzles, spray nozzles and the like can be mentioned.
From the viewpoint of permeability of the developer, removability of the non-image area, and efficiency in production, a method of supplying the developer with a straight nozzle or a method of continuously supplying the developer with a spray nozzle is preferable. From the viewpoint of permeability, the method of supplying with a spray nozzle is more preferable.
In addition, after continuously supplying the developer with a straight nozzle, the substrate is spun to remove the developer from the substrate. A step of removing from above may be employed, and this step may be repeated multiple times.
The method of supplying the developer in the development process includes a process in which the developer is continuously supplied to the base material, a process in which the developer is kept substantially stationary on the base material, and a process in which the developer exceeds the developer on the base material. A process of vibrating with sound waves or the like and a process of combining them can be employed.
現像液がアルカリ水溶液である場合、リンス液としては、例えば水を用いることができる。現像液が有機溶剤を含む現像液である場合、リンス液としては、例えば、現像液に含まれる溶剤とは異なる溶剤(例えば、水、現像液に含まれる有機溶剤とは異なる有機溶剤)を用いることができる。 [Rinse liquid]
When the developer is an alkaline aqueous solution, water, for example, can be used as the rinse. When the developer is a developer containing an organic solvent, for example, a solvent different from the solvent contained in the developer (for example, water, an organic solvent different from the organic solvent contained in the developer) is used as the rinse liquid. be able to.
他の成分としては、例えば、公知の界面活性剤や公知の消泡剤等が挙げられる。 The rinse solution may further contain other components.
Other components include, for example, known surfactants and known antifoaming agents.
リンス液の供給方法は、所望のパターンを形成できれば特に制限は無く、基材をリンス液に浸漬する方法、基材に液盛りによりリンス液を供給する方法、基材にリンス液をシャワーで供給する方法、基材上にストレートノズル等の手段によりリンス液を連続供給する方法がある。
リンス液の浸透性、非画像部の除去性、製造上の効率の観点から、リンス液をシャワーノズル、ストレートノズル、スプレーノズルなどで供給する方法があり、スプレーノズルにて連続供給する方法が好ましく、画像部へのリンス液の浸透性の観点からは、スプレーノズルで供給する方法がより好ましい。ノズルの種類は特に制限は無く、ストレートノズル、シャワーノズル、スプレーノズル等が挙げられる。
すなわち、リンス工程は、リンス液を上記露光後の膜に対してストレートノズルにより供給、又は、連続供給する工程であることが好ましく、リンス液をスプレーノズルにより供給する工程であることがより好ましい。
またリンス工程におけるリンス液の供給方法としては、リンス液が連続的に基材に供給され続ける工程、基材上でリンス液が略静止状態で保たれる工程、基材上でリンス液を超音波等で振動させる工程及びそれらを組み合わせた工程などが採用可能である。 [Method of supplying rinse solution]
The method of supplying the rinse solution is not particularly limited as long as the desired pattern can be formed, and includes a method of immersing the base material in the rinse solution, a method of supplying the rinse solution to the base material by piling up the base material, and a method of supplying the rinse solution to the base material by showering. and a method of continuously supplying the rinsing liquid onto the substrate by means of a straight nozzle or the like.
From the viewpoint of the permeability of the rinse liquid, the removability of the non-image areas, and the efficiency in manufacturing, there are methods of supplying the rinse liquid using a shower nozzle, a straight nozzle, a spray nozzle, etc., and a continuous supply method using a spray nozzle is preferable. From the viewpoint of the permeability of the rinsing liquid to the image area, the method of supplying the rinsing liquid with a spray nozzle is more preferable. The type of nozzle is not particularly limited, and straight nozzles, shower nozzles, spray nozzles and the like can be mentioned.
That is, the rinsing step is preferably a step of supplying the rinse liquid to the film after exposure through a straight nozzle or a step of continuously supplying the same, and more preferably a step of supplying the rinse liquid through a spray nozzle.
The method of supplying the rinse liquid in the rinse step includes a process in which the rinse liquid is continuously supplied to the base material, a process in which the rinse liquid is kept substantially stationary on the base material, and a process in which the rinse liquid is kept on the base material in a substantially stationary state. A process of vibrating with sound waves or the like and a process of combining them can be adopted.
現像工程により得られたパターン(リンス工程を行う場合は、リンス後のパターン)は、上記現像により得られたパターン(樹脂組成物からなる部材)を加熱する加熱工程に供さることが好ましい。
すなわち、本発明のポリイミド含有部形成用組成物に係る硬化物の製造方法は、現像工程により得られたパターンを加熱する加熱工程を含んでもよい。 また、本発明のポリイミド含有部形成用組成物に係る硬化物の製造方法は、現像工程を行わずに他の方法で得られたパターン、又は、適用工程により得られた膜を加熱する加熱工程を含むことも好ましく、現像工程を行わずに、適用工程により得られた膜を加熱する加熱工程を含むこともより好ましい。
加熱工程において、ポリイミド前駆体等の樹脂は環化してポリイミド等の樹脂となる。
また、特定樹脂、又は特定樹脂以外の架橋剤における未反応の架橋性基の架橋なども進行する。
加熱工程における加熱温度(最高加熱温度)としては、375℃以下が好ましく、350℃以下がより好ましく、300℃以下が一層好ましく、250℃以下とすることもできる。
上記加熱温度の下限は、160℃以上であることが好ましく、170℃以上であることがより好ましく、180℃以上であることが更に好ましい。
加熱工程における加熱温度、加熱時間等の加熱条件を調整することにより、ポリイミド含有部のガラス転移温度を調整することが可能となる。具体的には、より高温で、より長時間加熱することにより、ポリイミドの閉環率が増大し、ガラス転移温度は高くなると考えられる。 <Heating process>
The pattern obtained by the developing step (the pattern after rinsing when the rinsing step is performed) is preferably subjected to a heating step of heating the pattern obtained by the above developing (the member made of the resin composition).
That is, the method for producing a cured product of the composition for forming a polyimide-containing portion of the present invention may include a heating step of heating the pattern obtained by the developing step. Further, the method for producing a cured product according to the composition for forming a polyimide-containing portion of the present invention includes a pattern obtained by another method without performing the developing step, or a heating step of heating the film obtained by the applying step It is also preferable to include a heating step of heating the film obtained by the applying step without performing the developing step.
In the heating step, a resin such as a polyimide precursor is cyclized into a resin such as polyimide.
In addition, cross-linking of unreacted cross-linkable groups in the specific resin or a cross-linking agent other than the specific resin also progresses.
The heating temperature (maximum heating temperature) in the heating step is preferably 375° C. or lower, more preferably 350° C. or lower, even more preferably 300° C. or lower, and may be 250° C. or lower.
The lower limit of the heating temperature is preferably 160° C. or higher, more preferably 170° C. or higher, and even more preferably 180° C. or higher.
By adjusting heating conditions such as heating temperature and heating time in the heating step, it is possible to adjust the glass transition temperature of the polyimide-containing portion. Specifically, it is thought that heating at a higher temperature for a longer time increases the ring closure rate of the polyimide and raises the glass transition temperature.
加えて、急速加熱可能なオーブンの場合、加熱開始時の温度から最高加熱温度まで1~8℃/秒の昇温速度で行うことが好ましく、2~7℃/秒がより好ましく、3~6℃/秒が更に好ましい。 Heating in the heating step is preferably carried out at a temperature rising rate of 1 to 12° C./min from the temperature at the start of heating to the maximum heating temperature. The rate of temperature increase is more preferably 2 to 10°C/min, still more preferably 3 to 10°C/min. By setting the temperature rise rate to 1°C/min or more, it is possible to prevent excessive volatilization of the acid or solvent while ensuring productivity. The residual stress of the object can be relaxed.
In addition, in the case of an oven capable of rapid heating, it is preferable to increase the temperature from the temperature at the start of heating to the maximum heating temperature at a rate of 1 to 8 ° C./sec, more preferably 2 to 7 ° C./sec, and 3 to 6 °C/sec is more preferred.
上記加熱温度の上限は、350℃以下であることが好ましく、250℃以下であることがより好ましく、240℃以下であることが更に好ましい。 Especially when forming a multilayer laminate, the heating temperature is preferably 30° C. or higher, more preferably 80° C. or higher, and further preferably 100° C. or higher, from the viewpoint of adhesion between layers. 120° C. or higher is particularly preferred.
The upper limit of the heating temperature is preferably 350° C. or lower, more preferably 250° C. or lower, and even more preferably 240° C. or lower.
更に、加熱後冷却してもよく、この場合の冷却速度としては、1~5℃/分であることが好ましい。 Heating may be done in stages. As an example, the temperature is raised from 25° C. to 120° C. at 3° C./min, held at 120° C. for 60 minutes, heated from 120° C. to 180° C. at 2° C./min, and held at 180° C. for 120 minutes. , may be performed. It is also preferable to carry out the treatment while irradiating ultraviolet rays as described in US Pat. No. 9,159,547. Such a pretreatment process can improve the properties of the film. The pretreatment step is preferably performed for a short time of about 10 seconds to 2 hours, more preferably 15 seconds to 30 minutes. The pretreatment may be performed in two or more steps. For example, the first pretreatment step may be performed in the range of 100 to 150°C, and then the second pretreatment step may be performed in the range of 150 to 200°C. good.
Further, cooling may be performed after heating, and the cooling rate in this case is preferably 1 to 5°C/min.
加熱工程における加熱手段としては、特に限定されないが、例えばホットプレート、赤外炉、電熱式オーブン、熱風式オーブン、赤外線オーブンなどが挙げられる。 The heating step is preferably carried out in an atmosphere of low oxygen concentration, such as by flowing an inert gas such as nitrogen, helium or argon, or under reduced pressure, in order to prevent decomposition of the specific resin. The oxygen concentration is preferably 50 ppm (volume ratio) or less, more preferably 20 ppm (volume ratio) or less.
The heating means in the heating step is not particularly limited, and examples thereof include a hot plate, an infrared oven, an electric heating oven, a hot air oven, an infrared oven and the like.
現像工程により得られた(リンス工程を行う場合は、リンス後のパターン)は、上記加熱工程に代えて、又は、上記加熱工程に加えて、現像工程後のパターンを露光する現像後露光工程に供されてもよい。
すなわち、本発明のポリイミド含有部形成用組成物に係る硬化物の製造方法は、現像工程により得られたパターンを露光する現像後露光工程を含んでもよい。本発明のポリイミド含有部形成用組成物に係る硬化物の製造方法は、加熱工程及び現像後露光工程を含んでもよいし、加熱工程及び現像後露光工程の一方のみを含んでもよい。
現像後露光工程においては、例えば、光塩基発生剤の感光によってポリイミド前駆体等の環化が進行する反応や、光酸発生剤の感光によって酸分解性基の脱離が進行する反応などを促進することができる。
現像後露光工程においては、現像工程において得られたパターンの少なくとも一部が露光されればよいが、上記パターンの全部が露光されることが好ましい。
現像後露光工程における露光量は、感光性化合物が感度を有する波長における露光エネルギー換算で、50~20,000mJ/cm2であることが好ましく、100~15,000mJ/cm2であることがより好ましい。
現像後露光工程は、例えば、上述の露光工程における光源を用いて行うことができ、ブロードバンド光を用いることが好ましい。 <Post-development exposure process>
The pattern obtained by the development step (the pattern after rinsing when the rinsing step is performed) is subjected to a post-development exposure step of exposing the pattern after the development step instead of or in addition to the heating step. may be provided.
That is, the method for producing a cured product of the composition for forming a polyimide-containing portion of the present invention may include a post-development exposure step of exposing the pattern obtained in the development step. The method for producing a cured product of the composition for forming a polyimide-containing portion of the present invention may include a heating step and a post-development exposure step, or may include only one of the heating step and the post-development exposure step.
In the post-development exposure step, for example, a reaction in which cyclization of a polyimide precursor or the like proceeds by exposure of a photobase generator, or a reaction in which elimination of an acid-decomposable group proceeds by exposure of a photoacid generator is promoted. can do.
In the post-development exposure step, at least part of the pattern obtained in the development step may be exposed, but it is preferable to expose the entire pattern.
The exposure amount in the post-development exposure step is preferably 50 to 20,000 mJ/cm 2 , more preferably 100 to 15,000 mJ/cm 2 in terms of exposure energy at the wavelength to which the photosensitive compound is sensitive. preferable.
The post-development exposure step can be performed using, for example, the light source used in the exposure step described above, and broadband light is preferably used.
本発明のポリイミド含有部形成用組成物が用いられる接合体の製造方法は、配線端子を備える面を有する基板Bを準備する工程を含む。 <Step of preparing substrate B>
A method for manufacturing a bonded body using the composition for forming a polyimide-containing portion of the present invention includes a step of preparing a substrate B having a surface provided with wiring terminals.
基板Bは、配線端子を有する。
以下、基板Bにおける配線端子を、配線端子Bとも記載する。 [Substrate B]
The substrate B has wiring terminals.
The wiring terminals on the substrate B are also referred to as wiring terminals B hereinafter.
後述する接合工程により得られる接合体において、上記配線端子Bの少なくとも一部が上述の基板Aにおける配線端子Aと電気的に接合される。 The thickness of the substrate B is preferably 0.1-5 mm, more preferably 0.2-1 mm.
At least a portion of the wiring terminal B is electrically connected to the wiring terminal A on the substrate A in the bonded body obtained by the bonding step described later.
また、配線端子Bの好ましい態様も、配線端子Aの好ましい態様と同様である。
基板Bは電子回路を含む電子回路領域を有していてもよい。また、上記電子回路は、半導体等の素子を有していてもよい。また、上記電子回路は、上記配線端子と電気的に接合されていることが好ましい。
基板Bがウエハである場合のサイズとしては、直径(基板Bが円形でない場合は最大径)を100mm以上とすることができる。また、大型の基板としては、例えば、200mm以上であることが好ましく、250mm以上であることがより好ましい。上限は特にないが、2,000mm以下であることが好ましい。
基板Bがチップである場合のサイズとしては、直径(基板Bが円形でない場合は最大径)を7mm以上とすることが好ましく、8mm以上がより好ましく、10mm以上が更に好ましい。上限としては、例えば、50mm以下であることが好ましく、30mm以下であることがより好ましく、20mm以下であることが更に好ましい。 The material used for the substrate B is not particularly limited, and the same materials as those for the substrate A described above are preferably used.
Moreover, the preferable aspect of the wiring terminal B is also the same as the preferable aspect of the wiring terminal A.
Substrate B may have an electronic circuit area containing electronic circuits. Moreover, the electronic circuit may have an element such as a semiconductor. Moreover, it is preferable that the electronic circuit is electrically connected to the wiring terminal.
When the substrate B is a wafer, the diameter (maximum diameter if the substrate B is not circular) can be 100 mm or more. Moreover, as a large substrate, for example, it is preferably 200 mm or more, and more preferably 250 mm or more. Although there is no particular upper limit, it is preferably 2,000 mm or less.
When the substrate B is a chip, the diameter (maximum diameter if the substrate B is not circular) is preferably 7 mm or more, more preferably 8 mm or more, and even more preferably 10 mm or more. The upper limit is, for example, preferably 50 mm or less, more preferably 30 mm or less, and even more preferably 20 mm or less.
本発明のポリイミド含有部形成用組成物が用いられる接合体の製造方法は、接合工程の前に、上記基板Bの上記配線端子を備える面上に第2のポリイミド含有部を形成する第2のポリイミド含有部形成工程を更に含むことが好ましい。
第2のポリイミド含有部形成工程は、例えば、上述の基板Aに対するポリイミド含有部形成工程と同様の方法により行うことができる。
ここで、第2のポリイミド含有部形成工程においては、本発明のポリイミド含有部形成用組成物を用いてもよいし、他の公知のポリイミド含有部形成用組成物を用いてもよいが、本発明のポリイミド含有部形成用組成物を用いることが好ましい。
ただし、第2のポリイミド含有部形成工程において本発明のポリイミド含有部形成用組成物を用いる場合、第2のポリイミド含有部形成工程において用いられる本発明のポリイミド含有部形成用組成物の組成と、基板Aに対するポリイミド含有部形成工程において用いられるポリイミド含有部形成用組成物の組成とは、同一であってもよいし、異なっていてもよい。
第2のポリイミド含有部の好ましい態様は、上述の基板Aにおいて形成されるポリイミド含有部の好ましい態様と同様である。
後述の接合工程において、第2のポリイミド含有部と、上述の基板Aにおいて形成されるポリイミド含有部とが少なくとも一部で接するように接合することで、接合体における接着性が向上すると考えられる。 <Step of Forming Second Polyimide-Containing Portion>
In the method for producing a bonded body using the composition for forming a polyimide-containing portion of the present invention, before the bonding step, a second polyimide-containing portion is formed on the surface of the substrate B provided with the wiring terminal. It is preferable to further include a polyimide-containing portion forming step.
The second polyimide-containing portion forming step can be performed, for example, by the same method as the polyimide-containing portion forming step for the substrate A described above.
Here, in the second polyimide-containing portion forming step, the composition for forming a polyimide-containing portion of the present invention may be used, or another known composition for forming a polyimide-containing portion may be used. It is preferable to use the polyimide-containing part-forming composition of the invention.
However, when the polyimide-containing portion-forming composition of the present invention is used in the second polyimide-containing portion-forming step, the composition of the polyimide-containing portion-forming composition of the present invention used in the second polyimide-containing portion-forming step, The composition for forming the polyimide-containing portion used in the step of forming the polyimide-containing portion on the substrate A may be the same as or different from the composition.
Preferred aspects of the second polyimide-containing portion are the same as preferred aspects of the polyimide-containing portion formed on the substrate A described above.
It is believed that in the bonding step described later, the second polyimide-containing portion and the polyimide-containing portion formed on the substrate A are bonded so that at least a portion thereof is in contact with each other, thereby improving the adhesiveness of the bonded body.
最大剥離抗力を増大する観点からは、第2のポリイミド含有部のガラス転移温度は、接合工程における接合温度よりも30℃以上低いことが好ましく、50℃以上低いことがより好ましく、70℃以上低いことが更に好ましい。
また、第2のポリイミド含有部のガラス転移温度は、接合工程における接合温度よりも30℃以上高いことが好ましい。 Moreover, when forming the second polyimide-containing portion, the glass transition temperature of the second polyimide-containing portion is preferably lower than the bonding temperature in the bonding step.
From the viewpoint of increasing the maximum peel resistance, the glass transition temperature of the second polyimide-containing portion is preferably 30 ° C. or more lower than the bonding temperature in the bonding step, more preferably 50 ° C. or more, and 70 ° C. or more. is more preferred.
Also, the glass transition temperature of the second polyimide-containing portion is preferably 30° C. or more higher than the bonding temperature in the bonding step.
本発明のポリイミド含有部形成用組成物が用いられる接合体の製造方法は、上記ポリイミド含有部形成工程と、接合工程との間に、基板Aのポリイミド含有部の表面を平坦化する平坦化工程を含むことが好ましい。
後述する接合工程においては、基材Aにおける平坦化されたポリイミド含有部と、基材Bの表面(又は、平坦化されていてもよい第2のポリイミド含有部の表面)とが接触するよう接合されることが好ましい。 [Planarization process]
In the method for producing a bonded body using the composition for forming a polyimide-containing portion of the present invention, a planarization step of planarizing the surface of the polyimide-containing portion of the substrate A is performed between the polyimide-containing portion forming step and the bonding step. It is preferred to include
In the bonding step described later, the flattened polyimide-containing portion of the base material A and the surface of the base material B (or the surface of the second polyimide-containing portion, which may be flattened) are in contact with each other. preferably.
上記平坦化は、カッティング、機械研磨、研削、プラズマ処理、レーザーアブレーション等の物理研磨によって行われてもよいし、CMP(Chemical Mechanical Polishing)等の化学研磨により行われてもよい。
また、カッティング後にCMPを行うなど、これらの方法を組み合わせてもよい。
具体的には、例えば、ポリイミド含有部の表面をダイヤモンドバイトで切削し、ポリイミド含有部の新たな表面と、配線端子Aとを露出させる態様が挙げられる。基板Aにおける配線端子Aとポリイミド含有部とを、配線端子Aが露出するように平坦化処理を行なうことで、配線端子Aとポリイミド含有部の一括平坦化による配線端子Aの頭出しが可能となる。
平坦化は、例えばサーフェースプレーナ(Surface Planer)で行うことができる。サーフェースプレーナとしては、例えばスピンドルにダイヤモンドバイトが装着されたものが例示され、ディスコ製のDFS8910、DFS8960、DAS8920、DAS8930(いずれも商品名)が例示される。 It is preferable that the wiring terminal A on the substrate A is exposed from the polyimide-containing portion by the planarization.
The flattening may be performed by physical polishing such as cutting, mechanical polishing, grinding, plasma treatment, laser ablation, or by chemical polishing such as CMP (Chemical Mechanical Polishing).
Also, these methods may be combined, such as performing CMP after cutting.
Specifically, for example, the surface of the polyimide-containing portion is cut with a diamond cutting tool to expose a new surface of the polyimide-containing portion and the wiring terminal A. By flattening the wiring terminal A and the polyimide-containing portion on the substrate A so that the wiring terminal A is exposed, the wiring terminal A and the polyimide-containing portion can be collectively flattened to expose the wiring terminal A. Become.
Planarization can be performed, for example, with a surface planer. Examples of the surface planer include those in which a diamond tool is attached to a spindle, such as DFS8910, DFS8960, DAS8920, and DAS8930 (all trade names) manufactured by Disco.
平坦化工程において、ポリイミド含有部は配線端子Aと共に平坦化されることが好ましい。上記平坦化の程度としては、ポリイミド含有部及び配線端子AのTTV(Total Thickness Variation:トータルシックネスバリエーション)が10μm以下であることが好ましく、5μm以下であることがより好ましく、3μm以下であることが更に好ましい。
本発明において、TTVとは、ポリイミド含有部のエッジ部から1mm以上内側の領域を2mm四方の区画に分割(ポリイミド含有部の面積が微小であるなど、2mm四方の区画に分割できない場合はポリイミド含有部のエッジ部から1mm以上内側における全領域を一区画とする)し、各区画ごとに一方の表面と他方の表面との間の最大厚さ(T1)と、一方の表面と他方の表面との間の最小厚さ(T2)を測定し、各区画ごとに膜厚差(T1-T2)を算出し、膜厚差(T1-T2)が大きい順に各区画に序列を設け、最上位区画(最も膜厚差が大きい)から膜厚差の大きい順に総区画数の10%(小数点以下が存在する場合は切り捨て)に相当する個数の区画群および最下位区画(最も膜厚差が小さい)から膜厚差の小さい順に総区画数の10%(小数点以下が存在する場合は切り捨て)に相当する個数の区画群を除外し、残った区画群の各膜厚差(T1-T2)の算術平均値をいう。
本明細書においては、ここで定義するポリイミド含有部のTTVを特に意味する場合に、「区画評価TTV」と称することがある。ポリイミド含有部のTTVを上記上限値以下とすることにより、膜厚が概ね均一になり、基板Bとの接着性が向上する。 -TTV-
In the planarization step, the polyimide-containing portion is preferably planarized together with the wiring terminal A. As for the degree of planarization, the TTV (Total Thickness Variation) of the polyimide-containing portion and the wiring terminal A is preferably 10 μm or less, more preferably 5 μm or less, and 3 μm or less. More preferred.
In the present invention, TTV means that the area 1 mm or more inside from the edge of the polyimide-containing portion is divided into 2 mm square sections (if the area of the polyimide containing portion is small, etc., it cannot be divided into 2 mm square sections, The entire area inside 1 mm or more from the edge of the part is defined as one section), and for each section, the maximum thickness between one surface and the other surface (T1), and the one surface and the other surface Measure the minimum thickness (T2) between, calculate the film thickness difference (T1-T2) for each section, rank each section in descending order of the film thickness difference (T1-T2), the highest section The number of partition groups corresponding to 10% of the total number of partitions (rounded down if there is a decimal point) and the lowest partition (smallest film thickness difference) in descending order of film thickness difference from (largest film thickness difference) 10% of the total number of compartments (rounded down if there is a decimal point) in descending order of film thickness difference from the remaining compartment groups. mean value.
In this specification, when specifically referring to the TTV of a polyimide-containing portion as defined herein, it may be referred to as a "compartment-rated TTV." By setting the TTV of the polyimide-containing portion to the upper limit value or less, the film thickness becomes generally uniform, and the adhesiveness to the substrate B is improved.
本発明のポリイミド含有部は、基板Aの表面と接する側とは反対側の面の表面粗さであるRaが10nm以上1.5μm以下であることが好ましい。上限としては、1μm以下であることが好ましく、500nm以下であることがより好ましく、300nm以下であることがさらに好ましく、200nm以下であることが一層好ましく、150nm以下であることがより一層好ましく、120nm以下であることがさらに一層好ましい。
ポリイミド含有部の表面粗さを上記下限値以上とすることにより、アンカー効果が働き基板Bとの接着性を向上させることができる。
また、表面粗さを上記上限値以下とすることにより、基板Bとの接合時に、泡などを含んで接合してしまうことによるボイド等の欠陥発生を効果的に抑制することができる。 -Ra-
The polyimide-containing portion of the present invention preferably has a surface roughness Ra of 10 nm or more and 1.5 μm or less on the side opposite to the side in contact with the surface of the substrate A. The upper limit is preferably 1 µm or less, more preferably 500 nm or less, still more preferably 300 nm or less, even more preferably 200 nm or less, even more preferably 150 nm or less, and 120 nm. The following are even more preferred.
By setting the surface roughness of the polyimide-containing portion to the above lower limit or more, the anchor effect works and the adhesiveness to the substrate B can be improved.
Further, by setting the surface roughness to the above upper limit or less, it is possible to effectively suppress the occurrence of defects such as voids due to bubbles and the like being included in the bonding with the substrate B.
第2の平坦化工程は、上述の基板Aにおける平坦化工程と同様の方法により行うことができる。 When forming the second polyimide-containing portion on the substrate B, a second planarization for planarizing the surface of the second polyimide-containing portion is performed between the step of forming the second polyimide-containing portion and the bonding step. It is preferable to include steps.
The second planarization process can be performed by the same method as the planarization process for the substrate A described above.
本発明のポリイミド含有部形成用組成物が用いられる接合体の製造方法は、上記基板Aのポリイミド含有部を有する面と、上記基板Bにおける上記配線端子を備える面とを接合する接合工程を含む。
上記基板Bが第2のポリイミド含有部を有する場合、接合工程は、上記基板Aのポリイミド含有部を有する面と、上記基板Bにおける上記第2のポリイミド含有部を有する面とを接合する工程である。 [Joining process]
A method for producing a bonded body using the composition for forming a polyimide-containing portion of the present invention includes a bonding step of bonding the surface of the substrate A having the polyimide-containing portion and the surface of the substrate B having the wiring terminal. .
When the substrate B has a second polyimide-containing portion, the bonding step is a step of bonding the surface of the substrate A having the polyimide-containing portion and the surface of the substrate B having the second polyimide-containing portion. be.
上記接合工程において、上記基板Aのポリイミド含有部を有する面に含まれる電極と、上記基板Bにおける上記配線端子を備える面における電極とが直接接するように接合されることも、本発明の好ましい態様の1つである。
すなわち、配線端子A及び配線端子Bのいずれもが、導通路を有しないことも好ましい。本発明においては、ポリイミド含有部のガラス転移温度が接合温度よりも低いことにより、導通路を使用しない場合であっても、基板Aと基板Bとの接着性、電気的な接続性が確保できる。 By bonding, the wiring terminal A on the substrate A and the wiring terminal B on the substrate B are electrically bonded.
In the bonding step, it is also a preferred embodiment of the present invention that the electrodes included in the surface of the substrate A having the polyimide-containing portion and the electrodes on the surface of the substrate B having the wiring terminals are in direct contact with each other. is one of
That is, it is also preferable that neither the wiring terminal A nor the wiring terminal B have a conducting path. In the present invention, the glass transition temperature of the polyimide-containing portion is lower than the bonding temperature, so that the adhesiveness and electrical connectivity between the substrates A and B can be ensured even when no conducting paths are used. .
接合時の温度(接合温度)は、100℃以上であることが好ましく、150℃以上であることがより好ましく、180℃以上であることがさらに好ましい。上限としては、450℃以下であることが好ましく、400℃以下であることがより好ましく、380℃以下であることが更に好ましく、350℃以下であることが特に好ましく、300℃以下であることが一層好ましく、280℃以下であることがより一層好ましく、260℃以下であることがさらに一層好ましく、250℃以下であることがさらに一層好ましい。この温度は、上述したように、導通路を溶融させ電極間の接合を可能とすることを考慮して、導通路の融点近傍の温度であることが好ましい。
接合工程における加熱時間は特に限定されないが、5秒以上であることが好ましく、1分以上であることがより好ましく、2分以上であることがさらに好ましい。上限としては、30分以下であることが実際的である。
加熱時の環境は特に限定されないが、減圧雰囲気下、機械的にポリイミド含有部を加圧しながら行なうことが好ましい。雰囲気圧としては、1×10-5mbar以上であることが好ましく、1×10-4mbar以上であることがより好ましく、5×10-4mbar以上であることがさらに好ましい。上限としては、0.1mbar以下であることが好ましく、1×10-2mbar以下であることがより好ましく、5×10-3mbar以下であることがさらに好ましい。
接合は2つの基板(基板A及び基板B)を挟持して行うことが好ましく、このとき基板に圧力をかけることが好ましい。基板にかける圧力は、1kN以上であることが好ましく、5kN以上であることがより好ましく、10kN以上であることがさらに好ましい。上限としては、100kN以下であることが実際的である。接合工程において用いられる装置は特に限定されないが、電子部品のリフローに用いられる装置を好適に利用することができる。 Bonding is preferably performed by means including heating, more preferably by means including heating and pressure.
The temperature during bonding (bonding temperature) is preferably 100° C. or higher, more preferably 150° C. or higher, and even more preferably 180° C. or higher. The upper limit is preferably 450°C or lower, more preferably 400°C or lower, even more preferably 380°C or lower, particularly preferably 350°C or lower, and preferably 300°C or lower. It is more preferably 280° C. or lower, even more preferably 260° C. or lower, and even more preferably 250° C. or lower. This temperature is preferably a temperature near the melting point of the conductive path, considering that the conductive path is melted and the electrodes can be joined together, as described above.
The heating time in the bonding step is not particularly limited, but is preferably 5 seconds or longer, more preferably 1 minute or longer, and even more preferably 2 minutes or longer. A practical upper limit is 30 minutes or less.
The heating environment is not particularly limited, but it is preferable to perform the heating under a reduced pressure atmosphere while mechanically pressurizing the polyimide-containing portion. The atmospheric pressure is preferably 1×10 −5 mbar or higher, more preferably 1×10 −4 mbar or higher, and even more preferably 5×10 −4 mbar or higher. The upper limit is preferably 0.1 mbar or less, more preferably 1×10 −2 mbar or less, and even more preferably 5×10 −3 mbar or less.
Bonding is preferably performed by sandwiching two substrates (substrate A and substrate B), and at this time, it is preferable to apply pressure to the substrates. The pressure applied to the substrate is preferably 1 kN or more, more preferably 5 kN or more, and even more preferably 10 kN or more. A practical upper limit is 100 kN or less. The device used in the bonding step is not particularly limited, but a device used for reflowing electronic components can be preferably used.
また、基板Bが第2のポリイミド含有部を含む場合、基板Bの温度が70℃以上に予熱されていることも好ましい。
上記温度は、70℃以上であることが好ましく、90℃以上であることがより好ましい。また、上記温度の上限は、特に限定されないが、130℃以下であることが好ましい。
上記態様により、接合プロセスのタクトタイムを低減することができる。
また、接合時のポリイミド含有部の流動性が向上し、最大剥離抗力が向上する場合もある。 Moreover, in the bonding step, it is also preferable that the temperature of the substrate A provided with the polyimide-containing portion is preheated to 70° C. or higher.
Further, when the substrate B includes the second polyimide-containing part, it is also preferable that the temperature of the substrate B is preheated to 70° C. or higher.
The temperature is preferably 70° C. or higher, more preferably 90° C. or higher. Moreover, although the upper limit of the temperature is not particularly limited, it is preferably 130° C. or less.
According to the above aspect, the tact time of the bonding process can be reduced.
In addition, the fluidity of the polyimide-containing portion during bonding is improved, and the maximum peel resistance may be improved.
なお、本発明のポリイミド含有部形成用組成物が用いられる接合体の製造方法は上記に規定される各工程間にその他の工程を介在させることを妨げるものではない。また、接合工程として基板Aと基板Bとを面と面で対峙させて接合する例を中心に説明したが、基板Aに対して複数の基板Bを並列して配置し接着するような形態としてもよい。あるいは、相応の厚みのある基板Aと基板Bとを併設しその側面同士を接合する形態なども挙げられる。 [Other processes]
It should be noted that the method for producing a joined body using the composition for forming a polyimide-containing portion of the present invention does not preclude interposing other steps between the steps defined above. Also, as the bonding process, the example in which the substrate A and the substrate B are faced face-to-face and bonded has been mainly described, but a form in which a plurality of substrates B are arranged in parallel with respect to the substrate A and bonded together has been described. good too. Alternatively, there is a form in which a substrate A and a substrate B having a corresponding thickness are placed side by side and their side surfaces are joined together.
以下、接合体の製造方法の一例について図を使用して説明する。
図2は、本発明の一実施形態に係る接合体の製造方法で基板を接着するときの工程(一部)を模式的に断面図で示した工程説明図である。まず、シリコンウエハ1xに電子回路領域8が配設され、そこに電極31(配線端子A)が付された基板A(下地基板)1を準備する(図2(a))。基板A1の電子回路領域8の内部にはすでに導体もしくは半導体で構成された電子回路81が形成されている。電子回路を形成する方法は特に制限されず、定法により形成することができる。また、電子回路の構造や部材も特に限定されず、例えば、トランジスタおよびそれを電極に導通させる配線構造が挙げられる。 <Example of manufacturing method of joined body>
An example of a method for manufacturing a joined body will be described below with reference to the drawings.
FIG. 2 is a process explanatory view schematically showing (a part of) the process of bonding the substrates in the method of manufacturing a joined body according to one embodiment of the present invention, using cross-sectional views. First, a substrate A (underlying substrate) 1 having an electronic circuit region 8 provided on a silicon wafer 1x and electrodes 31 (wiring terminals A) attached thereon is prepared (FIG. 2(a)). An electronic circuit 81 made of a conductor or a semiconductor is already formed inside the electronic circuit area 8 of the substrate A1. A method for forming an electronic circuit is not particularly limited, and it can be formed by a standard method. Also, the structure and members of the electronic circuit are not particularly limited, and examples thereof include a transistor and a wiring structure that electrically connects the transistor to an electrode.
また、図に記載の基板Aは配線端子Aとして電極31のみを有しているが、電極31上に導通路を形成してもよい。導通路は、基板Aに初めから形成されていてもよいし、ポリイミド含有部を硬化前にパターニングして、パターニング部にめっきなどで導通路を作製しても良い。 After that, in the present embodiment, the resin composition layer 4 is heated to promote cyclization to form a cured polyimide-containing portion 41 (FIG. 2(c)). As a result, a polyimide-containing portion-provided substrate 1y in which the polyimide-containing portion 41 is disposed on the substrate A1 is formed. As in this example, the polyimide-containing portion 41 may shrink compared to the resin composition layer 4 due to curing. Although shown in the drawings in a slightly exaggerated manner, the shrinkage rate is not particularly limited, and a smaller shrinkage rate may be used, or no shrinkage may occur upon curing.
Further, although the substrate A shown in the drawing has only the electrodes 31 as the wiring terminals A, a conductive path may be formed on the electrodes 31 . The conductive path may be formed in the substrate A from the beginning, or the polyimide-containing portion may be patterned before curing, and the conductive path may be formed in the patterned portion by plating or the like.
このように平坦化を行うことにより、基板の接着性が向上されると考えられる。
また、導通路を形成しなくとも、配線端子同士の接合性が向上されると考えられる。 In the polyimide-containing portion-disposed substrate 1y of the present embodiment, the heights h1 and h2 of the electrodes 31 vary. The surface 4a of the polyimide-containing portion is also wavy and not flat. In the present embodiment, planarization is performed to eliminate such variations in the height of the electrode 31, expose the tip surface thereof, and planarize the surface of the polyimide-containing portion.
It is considered that the adhesion of the substrate is improved by planarizing in this way.
Also, it is considered that the bondability between the wiring terminals can be improved without forming the conducting path.
本実施形態において、基板Bにおける配線端子Bを有する面にも、第2のポリイミド含有部42が形成されており、その表面2aは基板Aにおけるポリイミド含有部41の表面と同様に平坦化されている。第2のポリイミド含有部42の形成及び平坦化は、ポリイミド含有部41の形成及び平坦化の方法と同様の方法により行うことができる。
このように、基板Aのポリイミド含有部41及び電極31の表面と、基板Bの第2のポリイミド含有部42及び電極32の表面とがいずれも平坦化されていることにより、今回の実施形態のように導通路がない場合であっても電気的な接続性が向上する。
このとき、積層体の電極31の部分と基板B2に設けられた電極32とが接触するようにアライメント(位置合わせ)する。
ここで、ポリイミド含有部41及び第2のポリイミド含有部42の少なくとも一方がマイグレーション抑制剤を含む場合、このアライメントに位置ズレが発生したとしても、電極31(電極32)からポリイミド含有部41(第2のポリイミド含有部42)に金属が移行することを抑制することができ、耐電圧性能を向上することができる。
配線端子Bにおいても、電極32上に導通路を形成してもよい。導通路は、基板Bに初めから形成されていてもよいし、第2のポリイミド含有部を硬化前にパターニングして、パターニング部にめっきなどで導通路を作製しても良い。 A substrate B is separately prepared for the laminate (flattened polyimide-containing portion-disposed substrate) 1z (FIG. 4A). The substrate B2 includes a silicon wafer 2x having through-hole electrodes 2y, a circuit wiring region 8 having circuit wiring 81 disposed therein, and electrodes 32 (wiring terminals B) formed in the circuit wiring region 8. FIG.
In this embodiment, the second polyimide-containing portion 42 is also formed on the surface of the substrate B having the wiring terminal B, and the surface 2a thereof is planarized in the same manner as the surface of the polyimide-containing portion 41 of the substrate A. there is The formation and flattening of the second polyimide-containing portion 42 can be performed by the same method as the formation and flattening of the polyimide-containing portion 41 .
As described above, the surface of the polyimide-containing portion 41 and the electrode 31 of the substrate A and the surface of the second polyimide-containing portion 42 and the electrode 32 of the substrate B are both flattened. Even if there is no conductive path, the electrical connectivity is improved.
At this time, alignment (alignment) is performed so that the electrodes 31 of the laminate and the electrodes 32 provided on the substrate B2 are in contact with each other.
Here, when at least one of the polyimide-containing portion 41 and the second polyimide-containing portion 42 contains a migration inhibitor, even if a positional deviation occurs in this alignment, the electrode 31 (electrode 32) is separated from the polyimide-containing portion 41 (second polyimide-containing portion 41). It is possible to suppress the migration of metal to the polyimide-containing portion 42) of 2, and to improve the withstand voltage performance.
A conductive path may be formed on the electrode 32 at the wiring terminal B as well. The conducting path may be formed in the substrate B from the beginning, or the second polyimide-containing portion may be patterned before curing, and the patterning portion may be plated to form the conducting path.
これにより、2つの基板が接合された接合体100が形成される。接合体100においては、電極31と電極32とが電気的に接合される(接合工程)。
これと同時に、上記の加熱によりポリイミド含有部41を軟化させ、積層体1zのポリイミド含有部表面4bと、基板Bの表面(平坦化された第2のポリイミド含有部42の表面)2aとを接着させ、接合体100を形成する。
本発明においては、ポリイミド含有部のガラス転移温度が、接合工程における接合温度よりも低いため、ポリイミド含有部は十分に軟化し、接着性に優れると考えられる。
これにより、基板Aと基板Bとの間の電気的な接続を行うとともに、両者の強固な固定状態を実現することができる。 Next, in the present embodiment, the aligned substrate B2 and the laminate 1z are brought into contact with each other via the polyimide-containing portion 41 and the second polyimide-containing portion 42 at the bonding surface P1 and bonded (FIG. 4B). ).
Thereby, a bonded body 100 in which two substrates are bonded is formed. In the joined body 100, the electrodes 31 and 32 are electrically joined (joining step).
At the same time, the polyimide-containing portion 41 is softened by the above heating, and the surface 4b of the polyimide-containing portion of the laminate 1z and the surface 2a of the substrate B (flattened surface of the second polyimide-containing portion 42) are bonded together. to form the bonded body 100 .
In the present invention, since the glass transition temperature of the polyimide-containing portion is lower than the bonding temperature in the bonding step, the polyimide-containing portion is sufficiently softened and is considered to have excellent adhesiveness.
As a result, the substrate A and the substrate B can be electrically connected to each other, and both can be firmly fixed.
本発明に係るデバイスは、本発明のポリイミド含有部形成用組成物が用いられる接合体の製造方法により得られた接合体を備える。
本発明の半導体デバイスの製造方法は、本発明の接合体の製造方法を含む。
本発明に係るデバイスには、半導体デバイス、電子デバイスなどが含まれ、半導体デバイス又は電子デバイスであることが好ましい。
デバイスとしては、例えば、半導体新技術研究会編「図解 最先端半導体パッケージ技術のすべて」工業調査会pp.8-19、110-114、160-165、関東学院大学表面光学研究所編「図解 表面処理技術のすべて」工業調査会pp.32-41、56-59に記載の各デバイスなどが挙げられる。
具体的には、上述のポリイミド含有部をチップ間のアンダーフィルに代替する接着フィルムとして用いる態様や、上述のポリイミド含有部をチップを固定するダイボンディングフィルムとして用いる態様が挙げられる。
その他、LED(light emitting diode)の素子の実装、フラットパネルディスプレイの光学素子の実装、パワー半導体パッケージの実装など、本発明のポリイミド含有部形成用組成物は多岐にわたって応用することができる。
また、例えば、本発明のポリイミド含有部形成用組成物は貫通電極(TSV:Through silicon via,スルーシリコンビア)を設けた半導体素子の三次元実装にも好適に利用することができる。
図5は三次元実装デバイスを模式的に示す断面図である。本実施形態では複数の半導体素子(半導体チップ)101a~101dが積層した積層体101が、配線基板120上に配置されている。複数の半導体素子101a~101dは、いずれもシリコン基板等の半導体ウエハからなる。積層体101は、貫通電極を有さない半導体素子101aと、貫通電極102b~102dを有する半導体素子101b~101dとをフリップチップ接続した構造を有している。貫通電極を有する半導体素子側の接続パッドが、はんだバンプ等の金属バンプ103a、103b、103cで接続されている。各半導体素子101a~101dの間隙には、樹脂層110が形成されている。この積層体の製造方法として本発明における接合体の製造方法を利用することができる。すなわち、例えば樹脂層110のうち少なくとも1つ(好ましくは全て)を、上述の本発明のポリイミド含有部形成用組成物からなるポリイミド含有部とすることができる。配線基板120の一方の面には、表面電極120aが設けられている。配線基板120と積層体(基板/基板積層体)101との間には、再配線層105が形成された絶縁層115が配置されている。再配線層105の一端は、はんだバンプ等の金属バンプ103dを介して、半導体素子101dの再配線層105側の面に形成された電極パッドに接続されている。また、再配線層105の他端は、配線基板の表面電極120aと、はんだバンプ等の金属バンプ103eを介して接続している。絶縁層115と積層体101との間には、樹脂層110aが形成されている。この絶縁層115と積層体101との接合にも、本発明のポリイミド含有部形成用組成物を用いることができる。すなわち、例えば樹脂層110aを、上述のポリイミド含有部とすることができる。また、絶縁層115と配線基板120との間には、樹脂層110bが形成されている。この絶縁層115と配線基板120との接合にも、本発明のポリイミド含有部形成用組成物を用いることができる。すなわち、例えば樹脂層110bを、上述のポリイミド含有部とすることができる。 (Device manufacturing method)
A device according to the present invention includes a joined body obtained by a method for producing a joined body using the composition for forming a polyimide-containing portion of the present invention.
A method of manufacturing a semiconductor device of the present invention includes the method of manufacturing a bonded body of the present invention.
Devices according to the present invention include semiconductor devices, electronic devices, etc., and are preferably semiconductor devices or electronic devices.
For devices, see, for example, "Illustrated All About State-of-the-Art Semiconductor Package Technology" edited by the Semiconductor New Technology Study Group, pp. 8-19, 110-114, 160-165, edited by Kanto Gakuin University Surface Optical Research Institute, "Illustrated All about Surface Treatment Technology", Kogyo Chokakai pp. 32-41 and 56-59.
Specifically, there are a mode in which the above-described polyimide-containing portion is used as an adhesive film substituting for an underfill between chips, and a mode in which the above-described polyimide-containing portion is used as a die bonding film for fixing chips.
In addition, the composition for forming a polyimide-containing portion of the present invention can be applied to a wide variety of applications such as mounting of LED (light emitting diode) elements, mounting of optical elements for flat panel displays, and mounting of power semiconductor packages.
Further, for example, the composition for forming a polyimide-containing portion of the present invention can be suitably used for three-dimensional mounting of a semiconductor element provided with a through electrode (TSV: Through silicon via).
FIG. 5 is a cross-sectional view schematically showing a three-dimensional mounting device. In this embodiment, a laminate 101 in which a plurality of semiconductor elements (semiconductor chips) 101a to 101d are laminated is arranged on a wiring substrate 120. As shown in FIG. Each of the plurality of semiconductor elements 101a-101d is made of a semiconductor wafer such as a silicon substrate. A laminated body 101 has a structure in which a semiconductor element 101a having no through electrodes and semiconductor elements 101b to 101d having through electrodes 102b to 102d are flip-chip connected. Connection pads on the semiconductor element side having through electrodes are connected by metal bumps 103a, 103b, 103c such as solder bumps. A resin layer 110 is formed between the semiconductor elements 101a to 101d. As a method for manufacturing this laminate, the method for manufacturing a joined body in the present invention can be used. That is, for example, at least one (preferably all) of the resin layers 110 can be a polyimide-containing portion made of the composition for forming a polyimide-containing portion of the present invention. A surface electrode 120 a is provided on one surface of the wiring board 120 . An insulating layer 115 having a rewiring layer 105 formed thereon is arranged between the wiring substrate 120 and the laminate (substrate/substrate laminate) 101 . One end of the rewiring layer 105 is connected to an electrode pad formed on the surface of the semiconductor element 101d facing the rewiring layer 105 via a metal bump 103d such as a solder bump. Further, the other end of the rewiring layer 105 is connected to the surface electrode 120a of the wiring board via a metal bump 103e such as a solder bump. A resin layer 110 a is formed between the insulating layer 115 and the laminate 101 . The composition for forming a polyimide-containing portion of the present invention can also be used to bond the insulating layer 115 and the laminate 101 together. That is, for example, the resin layer 110a can be used as the polyimide-containing portion described above. A resin layer 110 b is formed between the insulating layer 115 and the wiring board 120 . The composition for forming a polyimide-containing portion of the present invention can also be used to bond the insulating layer 115 and the wiring substrate 120 together. That is, for example, the resin layer 110b can be the polyimide-containing portion described above.
以下、本発明のポリイミド含有部形成用組成物に含まれる各成分の詳細について説明する。
本発明のポリイミド含有部形成用組成物は、ポリイミド及びポリイミド前駆体よりなる群から選ばれた少なくとも1種の樹脂(以下、「特定樹脂」ともいう)、並びに、溶剤を含むことが好ましく、ポリイミド前駆体及び溶剤を含むことが好ましい。
また、本発明のポリイミド含有部形成用組成物は、感光性化合物を更に含むことが好ましい。感光性化合物としては、光重合開始剤、光酸発生剤等が挙げられ、光重合開始剤が好ましい。 (Details of resin composition)
Hereinafter, details of each component contained in the composition for forming a polyimide-containing portion of the present invention will be described.
The composition for forming a polyimide-containing part of the present invention preferably contains at least one resin selected from the group consisting of polyimides and polyimide precursors (hereinafter also referred to as "specific resin"), and a solvent. It preferably contains a precursor and a solvent.
Moreover, it is preferable that the composition for forming a polyimide-containing part of the present invention further contains a photosensitive compound. The photosensitive compound includes a photopolymerization initiator, a photoacid generator, and the like, and a photopolymerization initiator is preferred.
本発明の樹脂組成物は、ポリイミド及びポリイミド前駆体よりなる群から選ばれた少なくとも1種の樹脂(特定樹脂)を含むことが好ましく、ポリイミド前駆体を含むことがより好ましい。
また、特定樹脂は重合性基を有することが好ましく、ラジカル重合性基を含むことがより好ましい。
特定樹脂がラジカル重合性基を有する場合、本発明の樹脂組成物は、後述のラジカル重合開始剤を含むことが好ましく、後述のラジカル重合開始剤を含み、かつ、後述のラジカル架橋剤を含むことがより好ましい。さらに必要に応じて、後述の増感剤を含むことができる。このような本発明の樹脂組成物からは、例えば、ネガ型感光膜が形成される。
また、特定樹脂は、酸分解性基等の極性変換基を有していてもよい。
特定樹脂が酸分解性基を有する場合、本発明の樹脂組成物は、後述の光酸発生剤を含むことが好ましい。このような本発明の樹脂組成物からは、例えば、化学増幅型であるポジ型感光膜又はネガ型感光膜が形成される。 <Specific resin>
The resin composition of the present invention preferably contains at least one resin (specific resin) selected from the group consisting of polyimides and polyimide precursors, and more preferably contains a polyimide precursor.
Moreover, the specific resin preferably has a polymerizable group, and more preferably contains a radically polymerizable group.
When the specific resin has a radically polymerizable group, the resin composition of the present invention preferably contains a radical polymerization initiator described later, and contains a radical polymerization initiator described later and a radical cross-linking agent described later. is more preferred. Further, if necessary, a sensitizer described later can be included. For example, a negative photosensitive film is formed from the resin composition of the present invention.
Moreover, the specific resin may have a polarity conversion group such as an acid-decomposable group.
When the specific resin has an acid-decomposable group, the resin composition of the present invention preferably contains a photoacid generator, which will be described later. From such a resin composition of the present invention, for example, a chemically amplified positive photosensitive film or negative photosensitive film is formed.
本発明で用いるポリイミド前駆体は、その種類等特に定めるものではないが、下記式(2)で表される繰返し単位を含むことが好ましい。
式(2)中、A1及びA2は、それぞれ独立に、酸素原子又は-NH-を表し、R111は、2価の有機基を表し、R115は、4価の有機基を表し、R113及びR114は、それぞれ独立に、水素原子又は1価の有機基を表す。 [Polyimide precursor]
Although the type of the polyimide precursor used in the present invention is not particularly limited, it preferably contains a repeating unit represented by the following formula (2).
In formula (2), A 1 and A 2 each independently represent an oxygen atom or -NH-, R 111 represents a divalent organic group, R 115 represents a tetravalent organic group, R 113 and R 114 each independently represent a hydrogen atom or a monovalent organic group.
式(2)におけるR111は、2価の有機基を表す。2価の有機基としては、直鎖又は分岐の脂肪族基、環状の脂肪族基及び芳香族基を含む基が例示され、炭素数2~20の直鎖又は分岐の脂肪族基、炭素数3~20の環状の脂肪族基、炭素数3~20の芳香族基、又は、これらの組み合わせからなる基が好ましく、炭素数6~20の芳香族基を含む基がより好ましい。上記直鎖又は分岐の脂肪族基は鎖中の炭化水素基がヘテロ原子を含む基で置換されていてもよく、上記環状の脂肪族基および芳香族基は環員の炭化水素基がヘテロ原子を含む基で置換されていてもよい。本発明の好ましい実施形態として、-Ar-および-Ar-L-Ar-で表される基であることが例示され、特に好ましくは-Ar-L-Ar-で表される基である。但し、Arは、それぞれ独立に、芳香族基であり、Lは、単結合、又は、フッ素原子で置換されていてもよい炭素数1~10の脂肪族炭化水素基、-O-、-CO-、-S-、-SO2-又は-NHCO-、あるいは、上記の2つ以上の組み合わせからなる基である。これらの好ましい範囲は、上述のとおりである。 A 1 and A 2 in formula (2) each independently represent an oxygen atom or —NH—, preferably an oxygen atom.
R 111 in formula (2) represents a divalent organic group. Examples of divalent organic groups include groups containing linear or branched aliphatic groups, cyclic aliphatic groups and aromatic groups, linear or branched aliphatic groups having 2 to 20 carbon atoms, A cyclic aliphatic group having 3 to 20 carbon atoms, an aromatic group having 3 to 20 carbon atoms, or a group consisting of a combination thereof is preferable, and a group containing an aromatic group having 6 to 20 carbon atoms is more preferable. In the straight-chain or branched aliphatic group, the hydrocarbon group in the chain may be substituted with a group containing a hetero atom, and in the cyclic aliphatic group and the aromatic group, the ring member hydrocarbon group is a hetero atom. may be substituted with a group containing Groups represented by -Ar- and -Ar-L-Ar- are exemplified as preferred embodiments of the present invention, and groups represented by -Ar-L-Ar- are particularly preferred. However, Ar is each independently an aromatic group, L is a single bond, or an aliphatic hydrocarbon group having 1 to 10 carbon atoms which may be substituted with a fluorine atom, -O-, -CO -, -S-, -SO 2 - or -NHCO-, or a group consisting of a combination of two or more of the above. Preferred ranges for these are as described above.
具体的には、炭素数2~20の直鎖又は分岐の脂肪族基、炭素数3~20の環状の脂肪族基、炭素数3~20の芳香族基、又は、これらの組み合わせからなる基を含むジアミンであることが好ましく、炭素数6~20の芳香族基を含むジアミンであることがより好ましい。上記直鎖又は分岐の脂肪族基は鎖中の炭化水素基がヘテロ原子を含む基で置換されていてもよく上記環状の脂肪族基および芳香族基は環員の炭化水素基がヘテロ原子を含む基で置換されていてもよい。芳香族基を含む基の例としては、下記が挙げられる。 R 111 is preferably derived from a diamine. Diamines used in the production of polyimide precursors include linear or branched aliphatic, cyclic aliphatic or aromatic diamines. Only one type of diamine may be used, or two or more types may be used.
Specifically, a linear or branched aliphatic group having 2 to 20 carbon atoms, a cyclic aliphatic group having 3 to 20 carbon atoms, an aromatic group having 3 to 20 carbon atoms, or a group consisting of a combination thereof is preferably a diamine containing, more preferably a diamine containing an aromatic group having 6 to 20 carbon atoms. In the straight-chain or branched aliphatic group, the hydrocarbon group in the chain may be substituted with a group containing a heteroatom. may be substituted with a group containing Examples of groups containing aromatic groups include:
式中、Aは単結合又は2価の連結基を表し、単結合、又は、フッ素原子で置換されていてもよい炭素数1~10の脂肪族炭化水素基、-O-、-C(=O)-、-S-、-SO2-、-NHCO-、又は、これらの組み合わせから選択される基であることが好ましく、単結合、又は、フッ素原子で置換されていてもよい炭素数1~3のアルキレン基、-O-、-C(=O)-、-S-、若しくは、-SO2-から選択される基であることがより好ましく、-CH2-、-O-、-S-、-SO2-、-C(CF3)2-、又は、-C(CH3)2-であることが更に好ましい。
式中、*は他の構造との結合部位を表す。
In the formula, A represents a single bond or a divalent linking group, a single bond, or an aliphatic hydrocarbon group having 1 to 10 carbon atoms optionally substituted with a fluorine atom, -O-, -C (= O)-, -S-, -SO 2 -, -NHCO-, or preferably a group selected from a combination thereof, and has 1 carbon atom optionally substituted with a single bond or a fluorine atom -3 alkylene groups, -O-, -C(=O)-, -S-, or -SO 2 - is more preferred, and -CH 2 -, -O-, - S—, —SO 2 —, —C(CF 3 ) 2 —, or —C(CH 3 ) 2 — are more preferred.
In the formula, * represents a binding site with other structures.
式(51)
式(51)中、R50~R57は、それぞれ独立に、水素原子、フッ素原子又は1価の有機基であり、R50~R57の少なくとも1つは、フッ素原子、メチル基又はトリフルオロメチル基であり、*はそれぞれ独立に、式(2)中の窒素原子との結合部位を表す。
R50~R57の1価の有機基としては、炭素数1~10(好ましくは炭素数1~6)の無置換のアルキル基、炭素数1~10(好ましくは炭素数1~6)のフッ化アルキル基等が挙げられる。
式(61)中、R58及びR59は、それぞれ独立に、フッ素原子、メチル基、又はトリフルオロメチル基であり、*はそれぞれ独立に、式(2)中の窒素原子との結合部位を表す。
式(51)又は(61)の構造を与えるジアミンとしては、2,2’-ジメチルベンジジン、2,2’-ビス(トリフルオロメチル)-4,4’-ジアミノビフェニル、2,2’-ビス(フルオロ)-4,4’-ジアミノビフェニル、4,4’-ジアミノオクタフルオロビフェニル等が挙げられる。これらは1種で又は2種以上を組み合わせて用いてもよい。 From the viewpoint of i-line transmittance, R 111 is preferably a divalent organic group represented by the following formula (51) or (61). In particular, from the viewpoint of i-line transmittance and availability, a divalent organic group represented by Formula (61) is more preferable.
Equation (51)
In formula (51), R 50 to R 57 are each independently a hydrogen atom, a fluorine atom or a monovalent organic group, and at least one of R 50 to R 57 is a fluorine atom, a methyl group or a trifluoro It is a methyl group, and each * independently represents a binding site to the nitrogen atom in formula (2).
The monovalent organic groups represented by R 50 to R 57 include unsubstituted alkyl groups having 1 to 10 carbon atoms (preferably 1 to 6 carbon atoms), A fluorinated alkyl group and the like can be mentioned.
In formula (61), R 58 and R 59 are each independently a fluorine atom, a methyl group, or a trifluoromethyl group, and * is each independently a bonding site to the nitrogen atom in formula (2) show.
Diamines that give the structure of formula (51) or (61) include 2,2′-dimethylbenzidine, 2,2′-bis(trifluoromethyl)-4,4′-diaminobiphenyl, 2,2′-bis (Fluoro)-4,4'-diaminobiphenyl, 4,4'-diaminooctafluorobiphenyl and the like. These may be used alone or in combination of two or more.
式(5)又は式(6)中、*はそれぞれ独立に、他の構造との結合部位を表す。
式(5)中、R112は単結合又は2価の連結基であり、単結合、又は、フッ素原子で置換されていてもよい炭素数1~10の脂肪族炭化水素基、-O-、-CO-、-S-、-SO2-、及び-NHCO-、ならびに、これらの組み合わせから選択される基であることが好ましく、単結合、又は、フッ素原子で置換されていてもよい炭素数1~3のアルキレン基、-O-、-CO-、-S-及び-SO2-から選択される基であることがより好ましく、-CH2-、-C(CF3)2-、-C(CH3)2-、-O-、-CO-、-S-及び-SO2-からなる群から選択される2価の基であることが更に好ましい。 R 115 in formula (2) represents a tetravalent organic group. As the tetravalent organic group, a tetravalent organic group containing an aromatic ring is preferable, and a group represented by the following formula (5) or (6) is more preferable.
In formula (5) or (6), each * independently represents a binding site to another structure.
In formula (5), R 112 is a single bond or a divalent linking group, a single bond, or an aliphatic hydrocarbon group having 1 to 10 carbon atoms optionally substituted with a fluorine atom, —O—, -CO-, -S-, -SO 2 -, and -NHCO-, and preferably a group selected from combinations thereof, and the number of carbon atoms optionally substituted with a single bond or a fluorine atom It is more preferably a group selected from 1 to 3 alkylene groups, -O-, -CO-, -S- and -SO 2 -, and -CH 2 -, -C(CF 3 ) 2 -, - More preferably, it is a divalent group selected from the group consisting of C(CH 3 ) 2 -, -O-, -CO-, -S- and -SO 2 -.
テトラカルボン酸二無水物は、下記式(O)で表されることが好ましい。
式(O)中、R115は、4価の有機基を表す。R115の好ましい範囲は式(2)におけるR115と同義であり、好ましい範囲も同様である。 Specifically, R 115 includes a tetracarboxylic acid residue remaining after removal of an anhydride group from a tetracarboxylic dianhydride. The polyimide precursor may contain only one type of tetracarboxylic dianhydride residue as a structure corresponding to R115 , or may contain two or more types thereof.
The tetracarboxylic dianhydride is preferably represented by the following formula (O).
In formula (O), R 115 represents a tetravalent organic group. The preferred range of R 115 is synonymous with R 115 in formula (2), and the preferred range is also the same.
エチレン性不飽和結合を有する基としては、ビニル基、アリル基、イソアリル基、2-メチルアリル基、ビニル基と直接結合した芳香環を有する基(例えば、ビニルフェニル基など)、(メタ)アクリルアミド基、(メタ)アクリロイルオキシ基、下記式(III)で表される基などが挙げられ、下記式(III)で表される基が好ましい。 R 113 and R 114 in formula (2) each independently represent a hydrogen atom or a monovalent organic group. The monovalent organic group preferably includes a linear or branched alkyl group, a cyclic alkyl group, an aromatic group, or a polyalkyleneoxy group. At least one of R 113 and R 114 preferably contains a polymerizable group, more preferably both contain a polymerizable group. It is also preferred that at least one of R 113 and R 114 contains two or more polymerizable groups. The polymerizable group is a group capable of undergoing a cross-linking reaction by the action of heat, radicals, or the like, and is preferably a radically polymerizable group. Specific examples of the polymerizable group include a group having an ethylenically unsaturated bond, an alkoxymethyl group, a hydroxymethyl group, an acyloxymethyl group, an epoxy group, an oxetanyl group, a benzoxazolyl group, a blocked isocyanate group, and an amino group. be done. As the radically polymerizable group possessed by the polyimide precursor, a group having an ethylenically unsaturated bond is preferred.
Groups having an ethylenically unsaturated bond include a vinyl group, an allyl group, an isoallyl group, a 2-methylallyl group, a group having an aromatic ring directly bonded to a vinyl group (e.g., vinylphenyl group), and a (meth)acrylamide group. , a (meth)acryloyloxy group, a group represented by the following formula (III), and the like, and a group represented by the following formula (III) is preferable.
式(III)において、*は他の構造との結合部位を表す。
式(III)において、R201は、炭素数2~12のアルキレン基、-CH2CH(OH)CH2-、シクロアルキレン基又はポリアルキレンオキシ基を表す。
好適なR201の例は、エチレン基、プロピレン基、トリメチレン基、テトラメチレン基、ペンタメチレン基、ヘキサメチレン基、オクタメチレン基、ドデカメチレン基等のアルキレン基、1,2-ブタンジイル基、1,3-ブタンジイル基、-CH2CH(OH)CH2-、ポリアルキレンオキシ基が挙げられ、エチレン基、プロピレン基等のアルキレン基、-CH2CH(OH)CH2-、シクロヘキシル基、ポリアルキレンオキシ基がより好ましく、エチレン基、プロピレン基等のアルキレン基、又はポリアルキレンオキシ基が更に好ましい。
本発明において、ポリアルキレンオキシ基とは、アルキレンオキシ基が2以上直接結合した基をいう。ポリアルキレンオキシ基に含まれる複数のアルキレンオキシ基におけるアルキレン基は、それぞれ同一であっても異なっていてもよい。
ポリアルキレンオキシ基が、アルキレン基が異なる複数種のアルキレンオキシ基を含む場合、ポリアルキレンオキシ基におけるアルキレンオキシ基の配列は、ランダムな配列であってもよいし、ブロックを有する配列であってもよいし、交互等のパターンを有する配列であってもよい。
上記アルキレン基の炭素数(アルキレン基が置換基を有する場合、置換基の炭素数を含む)は、2以上であることが好ましく、2~10であることがより好ましく、2~6であることがより好ましく、2~5であることが更に好ましく、2~4であることが一層好ましく、2又は3であることが特に好ましく、2であることが最も好ましい。
また、上記アルキレン基は、置換基を有していてもよい。好ましい置換基としては、アルキル基、アリール基、ハロゲン原子等が挙げられる。
また、ポリアルキレンオキシ基に含まれるアルキレンオキシ基の数(ポリアルキレンオキシ基の繰返し数)は、2~20が好ましく、2~10がより好ましく、2~6が更に好ましい。
ポリアルキレンオキシ基としては、溶剤溶解性及び耐溶剤性の観点からは、ポリエチレンオキシ基、ポリプロピレンオキシ基、ポリトリメチレンオキシ基、ポリテトラメチレンオキシ基、又は、複数のエチレンオキシ基と複数のプロピレンオキシ基とが結合した基が好ましく、ポリエチレンオキシ基又はポリプロピレンオキシ基がより好ましく、ポリエチレンオキシ基が更に好ましい。上記複数のエチレンオキシ基と複数のプロピレンオキシ基とが結合した基において、エチレンオキシ基とプロピレンオキシ基とはランダムに配列していてもよいし、ブロックを形成して配列していてもよいし、交互等のパターン状に配列していてもよい。これらの基におけるエチレンオキシ基等の繰返し数の好ましい態様は上述の通りである。 In formula (III), R 200 represents a hydrogen atom, a methyl group, an ethyl group or a methylol group, preferably a hydrogen atom or a methyl group.
In formula (III), * represents a binding site with another structure.
In formula (III), R 201 represents an alkylene group having 2 to 12 carbon atoms, —CH 2 CH(OH)CH 2 —, a cycloalkylene group or a polyalkyleneoxy group.
Suitable examples of R 201 include ethylene, propylene, trimethylene, tetramethylene, pentamethylene, hexamethylene, octamethylene, alkylene groups such as dodecamethylene, 1,2-butanediyl, 1, 3-butanediyl group, —CH 2 CH(OH)CH 2 —, polyalkyleneoxy group, ethylene group, alkylene group such as propylene group, —CH 2 CH(OH)CH 2 —, cyclohexyl group, polyalkylene An oxy group is more preferred, and an alkylene group such as an ethylene group, a propylene group, or a polyalkyleneoxy group is even more preferred.
In the present invention, a polyalkyleneoxy group refers to a group in which two or more alkyleneoxy groups are directly bonded. The alkylene groups in the plurality of alkyleneoxy groups contained in the polyalkyleneoxy group may be the same or different.
When the polyalkyleneoxy group contains multiple types of alkyleneoxy groups with different alkylene groups, the arrangement of the alkyleneoxy groups in the polyalkyleneoxy group may be a random arrangement or a block arrangement. Alternatively, it may be arranged in a pattern such as an alternating pattern.
The number of carbon atoms in the alkylene group (including the number of carbon atoms in the substituent when the alkylene group has a substituent) is preferably 2 or more, more preferably 2 to 10, and 2 to 6. is more preferred, 2 to 5 is more preferred, 2 to 4 is even more preferred, 2 or 3 is particularly preferred, and 2 is most preferred.
Moreover, the said alkylene group may have a substituent. Preferred substituents include alkyl groups, aryl groups, and halogen atoms.
The number of alkyleneoxy groups contained in the polyalkyleneoxy group (repeating number of polyalkyleneoxy groups) is preferably 2 to 20, more preferably 2 to 10, and even more preferably 2 to 6.
As the polyalkyleneoxy group, from the viewpoint of solvent solubility and solvent resistance, a polyethyleneoxy group, a polypropyleneoxy group, a polytrimethyleneoxy group, a polytetramethyleneoxy group, or a plurality of ethyleneoxy groups and a plurality of propylene A group to which an oxy group is bonded is preferable, a polyethyleneoxy group or a polypropyleneoxy group is more preferable, and a polyethyleneoxy group is still more preferable. In the group in which a plurality of ethyleneoxy groups and a plurality of propyleneoxy groups are bonded, the ethyleneoxy groups and the propyleneoxy groups may be arranged randomly, or may be arranged to form blocks. , may be arranged in a pattern such as alternately. Preferred embodiments of the number of repetitions of ethyleneoxy groups and the like in these groups are as described above.
酸分解性基の具体例としては、tert-ブトキシカルボニル基、イソプロポキシカルボニル基、テトラヒドロピラニル基、テトラヒドロフラニル基、エトキシエチル基、メトキシエチル基、エトキシメチル基、トリメチルシリル基、tert-ブトキシカルボニルメチル基、トリメチルシリルエーテル基などが挙げられる。露光感度の観点からは、エトキシエチル基、又は、テトラヒドロフラニル基が好ましい。 In formula (2), at least one of R 113 and R 114 may be a polarity conversion group such as an acid-decomposable group. The acid-decomposable group is not particularly limited as long as it is decomposed by the action of an acid to generate an alkali-soluble group such as a phenolic hydroxy group or a carboxyl group. , a tertiary alkyl ester group and the like are preferable, and from the viewpoint of exposure sensitivity, an acetal group or a ketal group is more preferable.
Specific examples of acid-decomposable groups include tert-butoxycarbonyl, isopropoxycarbonyl, tetrahydropyranyl, tetrahydrofuranyl, ethoxyethyl, methoxyethyl, ethoxymethyl, trimethylsilyl, and tert-butoxycarbonylmethyl. groups, trimethylsilyl ether groups, and the like. From the viewpoint of exposure sensitivity, an ethoxyethyl group or a tetrahydrofuranyl group is preferred.
式(2-A)
式(2-A)中、A1及びA2は、酸素原子を表し、R111及びR112は、それぞれ独立に、2価の有機基を表し、R113及びR114は、それぞれ独立に、水素原子又は1価の有機基を表し、R113及びR114の少なくとも一方は、重合性基を含む基であり、両方が重合性基を含む基であることが好ましい。 The repeating unit represented by formula (2) is preferably a repeating unit represented by formula (2-A). That is, at least one polyimide precursor used in the present invention is preferably a precursor having a repeating unit represented by formula (2-A). By including the repeating unit represented by the formula (2-A) in the polyimide precursor, it becomes possible to further widen the width of the exposure latitude.
Formula (2-A)
In formula (2-A), A 1 and A 2 represent an oxygen atom, R 111 and R 112 each independently represent a divalent organic group, R 113 and R 114 each independently represents a hydrogen atom or a monovalent organic group, at least one of R 113 and R 114 is a group containing a polymerizable group, and both are preferably groups containing a polymerizable group.
R112は、式(5)におけるR112と同義であり、好ましい範囲も同様である。 A 1 , A 2 , R 111 , R 113 and R 114 are each independently synonymous with A 1 , A 2 , R 111 , R 113 and R 114 in formula (2), and preferred ranges are also the same. .
R 112 has the same definition as R 112 in formula (5), and the preferred range is also the same.
上記ポリイミド前駆体の分子量の分散度は、1.5以上が好ましく、1.8以上がより好ましく、2.0以上であることが更に好ましい。ポリイミド前駆体の分子量の分散度の上限値は特に定めるものではないが、例えば、7.0以下が好ましく、6.5以下がより好ましく、6.0以下が更に好ましい。
本明細書において、分子量の分散度とは、重量平均分子量/数平均分子量により算出される値である。
また、樹脂組成物が特定樹脂として複数種のポリイミド前駆体を含む場合、少なくとも1種のポリイミド前駆体の重量平均分子量、数平均分子量、及び、分散度が上記範囲であることが好ましい。また、上記複数種のポリイミド前駆体を1つの樹脂として算出した重量平均分子量、数平均分子量、及び、分散度が、それぞれ、上記範囲内であることも好ましい。 The weight average molecular weight (Mw) of the polyimide precursor is preferably 5,000 to 100,000, more preferably 10,000 to 50,000, still more preferably 15,000 to 40,000. Also, the number average molecular weight (Mn) is preferably 2,000 to 40,000, more preferably 3,000 to 30,000, still more preferably 4,000 to 20,000.
The polyimide precursor preferably has a molecular weight distribution of 1.5 or more, more preferably 1.8 or more, and even more preferably 2.0 or more. Although the upper limit of the polyimide precursor's molecular weight dispersity is not particularly defined, it is preferably 7.0 or less, more preferably 6.5 or less, and even more preferably 6.0 or less.
In the present specification, the molecular weight dispersity is a value calculated by weight average molecular weight/number average molecular weight.
Moreover, when the resin composition contains a plurality of polyimide precursors as the specific resin, the weight average molecular weight, number average molecular weight, and degree of dispersion of at least one polyimide precursor are preferably within the above ranges. It is also preferable that the weight-average molecular weight, the number-average molecular weight, and the degree of dispersion calculated from the plurality of types of polyimide precursors as one resin are within the ranges described above.
本発明に用いられるポリイミドは、アルカリ可溶性ポリイミドであってもよく、有機溶剤を主成分とする現像液に対して可溶なポリイミドであってもよい。
本明細書において、アルカリ可溶性ポリイミドとは、100gの2.38質量%テトラメチルアンモニウム水溶液に対し、23℃で0.1g以上溶解するポリイミドをいい、パターン形成性の観点からは、0.5g以上溶解するポリイミドであることが好ましく、1.0g以上溶解するポリイミドであることが更に好ましい。上記溶解量の上限は特に限定されないが、100g以下であることが好ましい。
また、ポリイミドは、得られる有機膜の膜強度及び絶縁性の観点からは、複数個のイミド構造を主鎖に有するポリイミドであることが好ましい。
本明細書において、「主鎖」とは、樹脂を構成する高分子化合物の分子中で相対的に最も長い結合鎖をいい、「側鎖」とはそれ以外の結合鎖をいう。 [Polyimide]
The polyimide used in the present invention may be an alkali-soluble polyimide or a polyimide soluble in a developer containing an organic solvent as a main component.
In the present specification, the alkali-soluble polyimide refers to a polyimide that dissolves in 100 g of a 2.38% by mass tetramethylammonium aqueous solution at 23° C. by 0.1 g or more, and from the viewpoint of pattern formation, 0.5 g or more. It is preferably a polyimide that dissolves, and more preferably a polyimide that dissolves 1.0 g or more. Although the upper limit of the dissolved amount is not particularly limited, it is preferably 100 g or less.
Moreover, the polyimide is preferably a polyimide having a plurality of imide structures in its main chain from the viewpoint of the film strength and insulating properties of the resulting organic film.
As used herein, the term "main chain" refers to the relatively longest linking chain in the molecule of the polymer compound that constitutes the resin, and the term "side chain" refers to the other linking chain.
得られる有機膜の膜強度の観点からは、ポリイミドは、フッ素原子を有することも好ましい。
フッ素原子は、例えば、後述する式(4)で表される繰返し単位におけるR132、又は、後述する式(4)で表される繰返し単位におけるR131に含まれることが好ましく、後述する式(4)で表される繰返し単位におけるR132、又は、後述する式(4)で表される繰返し単位におけるR131にフッ化アルキル基として含まれることがより好ましい。
ポリイミドの全質量に対するフッ素原子の量は、5質量%以上が好ましく、また、20質量%以下が好ましい。 - Fluorine atom -
From the viewpoint of the film strength of the organic film to be obtained, the polyimide preferably has a fluorine atom.
A fluorine atom is preferably included in, for example, R 132 in a repeating unit represented by formula (4) described later or R 131 in a repeating unit represented by formula (4) described later, and the formula ( It is more preferably contained as a fluorinated alkyl group in R 132 in the repeating unit represented by 4) or R 131 in the repeating unit represented by formula (4) described later.
The amount of fluorine atoms relative to the total mass of polyimide is preferably 5% by mass or more and preferably 20% by mass or less.
得られる有機膜の膜強度の観点からは、ポリイミドは、ケイ素原子を有することも好ましい。
ケイ素原子は、例えば、後述する式(4)で表される繰返し単位におけるR131に含まれることが好ましく、後述する式(4)で表される繰返し単位におけるR131に後述する有機変性(ポリ)シロキサン構造として含まれることがより好ましい。
また、上記ケイ素原子又は上記有機変性(ポリ)シロキサン構造はポリイミドの側鎖に含まれていてもよいが、ポリイミドの主鎖に含まれることが好ましい。
ポリイミドの全質量に対するケイ素原子の量は、1質量%以上が好ましく、20質量%以下がより好ましい。 -Silicon atom-
From the viewpoint of the film strength of the organic film to be obtained, the polyimide preferably has a silicon atom.
A silicon atom, for example, is preferably contained in R 131 in a repeating unit represented by formula (4) described later, and R 131 in a repeating unit represented by formula (4) described later is an organically modified (poly ) is more preferably contained as a siloxane structure.
The silicon atom or the organically modified (poly)siloxane structure may be contained in the side chain of the polyimide, but is preferably contained in the main chain of the polyimide.
The amount of silicon atoms relative to the total mass of polyimide is preferably 1% by mass or more, and more preferably 20% by mass or less.
得られる有機膜の膜強度の観点からは、ポリイミドは、エチレン性不飽和結合を有することが好ましい。
ポリイミドは、エチレン性不飽和結合を主鎖末端に有していてもよいし、側鎖に有していてもよいが、側鎖に有することが好ましい。
上記エチレン性不飽和結合は、ラジカル重合性を有することが好ましい。
エチレン性不飽和結合は、後述する式(4)で表される繰返し単位におけるR132、又は、後述する式(4)で表される繰返し単位におけるR131に含まれることが好ましく、後述する式(4)で表される繰返し単位におけるR132、又は、後述する式(4)で表される繰返し単位におけるR131にエチレン性不飽和結合を有する基として含まれることがより好ましい。
これらの中でも、エチレン性不飽和結合は、後述する式(4)で表される繰返し単位におけるR131に含まれることが好ましく、後述する式(4)で表される繰返し単位におけるR131にエチレン性不飽和結合を有する基として含まれることがより好ましい。
エチレン性不飽和結合を有する基としては、ビニル基、アリル基、ビニルフェニル基等の芳香環に直接結合した、置換されていてもよいビニル基を有する基、(メタ)アクリルアミド基、(メタ)アクリロイルオキシ基、下記式(IV)で表される基などが挙げられる。 - Ethylenically unsaturated bond -
From the viewpoint of the film strength of the resulting organic film, the polyimide preferably has an ethylenically unsaturated bond.
The polyimide may have an ethylenically unsaturated bond at the end of its main chain or in a side chain, preferably in a side chain.
The ethylenically unsaturated bond preferably has radical polymerizability.
The ethylenically unsaturated bond is preferably contained in R 132 in a repeating unit represented by the formula (4) described later, or R 131 in a repeating unit represented by the formula (4) described later. It is more preferably included as a group having an ethylenically unsaturated bond in R 132 in the repeating unit represented by (4) or R 131 in the repeating unit represented by formula (4) described below.
Among these, the ethylenically unsaturated bond is preferably contained in R 131 in the repeating unit represented by formula (4) described later, and ethylene is contained in R 131 in the repeating unit represented by formula (4) described later It is more preferably included as a group having a polyunsaturated bond.
The group having an ethylenically unsaturated bond includes a group having an optionally substituted vinyl group directly bonded to an aromatic ring such as a vinyl group, an allyl group, a vinylphenyl group, a (meth)acrylamide group, a (meth) Examples include an acryloyloxy group and a group represented by the following formula (IV).
また、上記炭素数2~12のアルキレン基としては、直鎖状、分岐鎖状、環状又はこれらの組み合わせにより表されるアルキレン基のいずれであってもよい。
上記炭素数2~12のアルキレン基としては、炭素数2~8のアルキレン基が好ましく、炭素数2~4のアルキレン基がより好ましい。 In formula (IV), R 21 is an alkylene group having 2 to 12 carbon atoms, —O—CH 2 CH(OH)CH 2 —, —C(═O)O—, —O(C═O)NH— , a (poly)alkyleneoxy group having 2 to 30 carbon atoms (the number of carbon atoms in the alkylene group is preferably 2 to 12, more preferably 2 to 6, and particularly preferably 2 or 3; the number of repetitions is preferably 1 to 12, 1 to 6 are more preferable, and 1 to 3 are particularly preferable), or a group in which two or more of these are combined.
In addition, the alkylene group having 2 to 12 carbon atoms may be a linear, branched, cyclic, or a combination of these alkylene groups.
As the alkylene group having 2 to 12 carbon atoms, an alkylene group having 2 to 8 carbon atoms is preferable, and an alkylene group having 2 to 4 carbon atoms is more preferable.
式(R1)~(R3)中、Lは単結合、又は、炭素数2~12のアルキレン基、炭素数2~30の(ポリ)アルキレンオキシ基若しくはこれらを2以上結合した基を表し、Xは酸素原子又は硫黄原子を表し、*は他の構造との結合部位を表し、●は式(IV)中のR21が結合する酸素原子との結合部位を表す。
式(R1)~(R3)中、Lにおける炭素数2~12のアルキレン基、又は、炭素数2~30の(ポリ)アルキレンオキシ基の好ましい態様は、上述のR21における、炭素数2~12のアルキレン基、又は、炭素数2~30の(ポリ)アルキレンオキシ基の好ましい態様と同様である。
式(R1)中、Xは酸素原子であることが好ましい。
式(R1)~(R3)中、*は式(IV)中の*と同義であり、好ましい態様も同様である。
式(R1)で表される構造は、例えば、フェノール性ヒドロキシ基等のヒドロキシ基を有するポリイミドと、イソシアナト基及びエチレン性不飽和結合を有する化合物(例えば、2-イソシアナトエチルメタクリレート等)とを反応することにより得られる。
式(R2)で表される構造は、例えば、カルボキシ基を有するポリイミドと、ヒドロキシ基及びエチレン性不飽和結合を有する化合物(例えば、2-ヒドロキシエチルメタクリレート等)とを反応することにより得られる。
式(R3)で表される構造は、例えば、フェノール性ヒドロキシ基等のヒドロキシ基を有するポリイミドと、グリシジル基及びエチレン性不飽和結合を有する化合物(例えば、グリシジルメタクリレート等)とを反応することにより得られる。 Among these, R 21 is preferably a group represented by any one of the following formulas (R1) to (R3), more preferably a group represented by formula (R1).
In formulas (R1) to (R3), L represents a single bond, an alkylene group having 2 to 12 carbon atoms, a (poly)alkyleneoxy group having 2 to 30 carbon atoms, or a group in which two or more of these are combined, and X represents an oxygen atom or a sulfur atom, * represents a bonding site with another structure, and ● represents a bonding site with the oxygen atom to which R 21 in formula (IV) bonds.
In formulas (R1) to (R3), a preferred embodiment of an alkylene group having 2 to 12 carbon atoms or a (poly)alkyleneoxy group having 2 to 30 carbon atoms in L is the above-mentioned R 21 having 2 to 12 carbon atoms. It is the same as the preferred embodiment of the 12 alkylene group or the (poly)alkyleneoxy group having 2 to 30 carbon atoms.
In formula (R1), X is preferably an oxygen atom.
In formulas (R1) to (R3), * has the same meaning as * in formula (IV), and preferred embodiments are also the same.
The structure represented by formula (R1) is, for example, a polyimide having a hydroxy group such as a phenolic hydroxy group, and a compound having an isocyanato group and an ethylenically unsaturated bond (e.g., 2-isocyanatoethyl methacrylate, etc.). Obtained by reaction.
The structure represented by formula (R2) can be obtained, for example, by reacting a polyimide having a carboxy group with a compound having a hydroxy group and an ethylenically unsaturated bond (eg, 2-hydroxyethyl methacrylate, etc.).
The structure represented by formula (R3) can be obtained, for example, by reacting a polyimide having a hydroxy group such as a phenolic hydroxy group with a compound having a glycidyl group and an ethylenically unsaturated bond (e.g., glycidyl methacrylate, etc.) can get.
ポリイミドは、エチレン性不飽和結合を有する基以外の重合性基を有していてもよい。
エチレン性不飽和結合を有する基以外の重合性基としては、エポキシ基、オキセタニル基等の環状エーテル基、メトキシメチル基等のアルコキシメチル基、メチロール基等が挙げられる。
エチレン性不飽和結合を有する基以外の重合性基は、例えば、後述する式(4)で表される繰返し単位におけるR131に含まれることが好ましい。
ポリイミドの全質量に対するエチレン性不飽和結合を有する基以外の重合性基の量は、0.0001~0.1mol/gであることが好ましく、0.001~0.05mol/gであることがより好ましい。 -Polymerizable Groups Other than Groups Having Ethylenically Unsaturated Bonds-
Polyimide may have a polymerizable group other than the group having an ethylenically unsaturated bond.
Polymerizable groups other than groups having an ethylenically unsaturated bond include cyclic ether groups such as an epoxy group and an oxetanyl group, alkoxymethyl groups such as a methoxymethyl group, and methylol groups.
A polymerizable group other than a group having an ethylenically unsaturated bond is preferably included, for example, in R 131 in a repeating unit represented by formula (4) described below.
The amount of the polymerizable group other than the group having an ethylenically unsaturated bond with respect to the total mass of the polyimide is preferably 0.0001 to 0.1 mol / g, preferably 0.001 to 0.05 mol / g. more preferred.
ポリイミドは、酸分解性基等の極性変換基を有していてもよい。ポリイミドにおける酸分解性基は、上述の式(2)におけるR113及びR114において説明した酸分解性基と同様であり、好ましい態様も同様である。
極性変換基は、例えば、後述する式(4)で表される繰返し単位におけるR131、R132、ポリイミドの末端などに含まれる。 -Polarity conversion group-
The polyimide may have a polarity conversion group such as an acid-decomposable group. The acid-decomposable group in the polyimide is the same as the acid-decomposable group described for R 113 and R 114 in formula (2) above, and preferred embodiments are also the same.
Polar conversion groups are included, for example, at R 131 and R 132 in the repeating unit represented by formula (4) described later, the terminal of polyimide, and the like.
ポリイミドがアルカリ現像に供される場合、現像性を向上する観点からは、ポリイミドの酸価は、30mgKOH/g以上であることが好ましく、50mgKOH/g以上であることがより好ましく、70mgKOH/g以上であることが更に好ましい。
また、上記酸価は500mgKOH/g以下であることが好ましく、400mgKOH/g以下であることがより好ましく、200mgKOH/g以下であることが更に好ましい。
また、ポリイミドが有機溶剤を主成分とする現像液を用いた現像(例えば、後述する「溶剤現像」)に供される場合、ポリイミドの酸価は、1~35mgKOH/gが好ましく、2~30mgKOH/gがより好ましく、5~20mgKOH/gが更に好ましい。
上記酸価は、公知の方法により測定され、例えば、JIS K 0070:1992に記載の方法により測定される。
また、ポリイミドに含まれる酸基としては、保存安定性及び現像性の両立の観点から、pKaが0~10である酸基が好ましく、3~8である酸基がより好ましい。
pKaとは、酸から水素イオンが放出される解離反応を考え、その平衡定数Kaをその負の常用対数pKaによって表したものである。本明細書において、pKaは、特に断らない限り、ACD/ChemSketch(登録商標)による計算値とする。又は、日本化学会編「改定5版 化学便覧 基礎編」に掲載の値を参照してもよい。
また、酸基が例えばリン酸等の多価の酸である場合、上記pKaは第一解離定数である。
このような酸基として、ポリイミドは、カルボキシ基、及び、フェノール性ヒドロキシ基よりなる群から選ばれた少なくとも1種を含むことが好ましく、フェノール性ヒドロキシ基を含むことがより好ましい。 - Acid value -
When polyimide is subjected to alkali development, the acid value of polyimide is preferably 30 mgKOH/g or more, more preferably 50 mgKOH/g or more, and more preferably 70 mgKOH/g or more, from the viewpoint of improving developability. is more preferable.
Moreover, the acid value is preferably 500 mgKOH/g or less, more preferably 400 mgKOH/g or less, and even more preferably 200 mgKOH/g or less.
Further, when the polyimide is subjected to development using a developer containing an organic solvent as a main component (for example, "solvent development" described later), the acid value of the polyimide is preferably 1 to 35 mgKOH/g, and 2 to 30 mgKOH. /g is more preferred, and 5 to 20 mgKOH/g is even more preferred.
The acid value is measured by a known method, for example, by the method described in JIS K 0070:1992.
As the acid group contained in the polyimide, an acid group having a pKa of 0 to 10 is preferable, and an acid group having a pKa of 3 to 8 is more preferable, from the viewpoint of both storage stability and developability.
The pKa is a dissociation reaction in which hydrogen ions are released from an acid, and its equilibrium constant Ka is represented by its negative common logarithm pKa. In this specification, unless otherwise specified, pKa is a value calculated by ACD/ChemSketch (registered trademark). Alternatively, it is possible to refer to the values listed in the Chemical Society of Japan, "Fifth Revised Edition, Chemistry Handbook, Fundamentals".
Also, when the acid group is a polyvalent acid such as phosphoric acid, the pKa is the first dissociation constant.
As such an acid group, the polyimide preferably contains at least one selected from the group consisting of a carboxy group and a phenolic hydroxy group, more preferably a phenolic hydroxy group.
アルカリ現像液による現像速度を適切なものとする観点からは、ポリイミドは、フェノール性ヒドロキシ基を有することが好ましい。
ポリイミドは、フェノール性ヒドロキシ基を主鎖末端に有してもよいし、側鎖に有してもよい。
フェノール性ヒドロキシ基は、例えば、後述する式(4)で表される繰返し単位におけるR132、又は、後述する式(4)で表される繰返し単位におけるR131に含まれることが好ましい。
ポリイミドの全質量に対するフェノール性ヒドロキシ基の量は、0.1~30mol/gであることが好ましく、1~20mol/gであることがより好ましい。 -Phenolic hydroxy group-
The polyimide preferably has a phenolic hydroxy group from the viewpoint of making the development speed with an alkaline developer appropriate.
The polyimide may have a phenolic hydroxy group at the end of the main chain or in the side chain.
A phenolic hydroxy group is preferably contained in, for example, R 132 in a repeating unit represented by formula (4) described later or R 131 in a repeating unit represented by formula (4) described later.
The amount of phenolic hydroxy groups relative to the total weight of the polyimide is preferably 0.1-30 mol/g, more preferably 1-20 mol/g.
式(4)中、R131は、2価の有機基を表し、R132は、4価の有機基を表す。
重合性基を有する場合、重合性基は、R131及びR132の少なくとも一方に位置していてもよいし、下記式(4-1)又は式(4-2)に示すようにポリイミドの末端に位置していてもよい。
式(4-1)
式(4-1)中、R133は重合性基であり、他の基は式(4)と同義である。
式(4-2)
R134及びR135の少なくとも一方は重合性基であり、重合性基でない場合は有機基であり、他の基は式(4)と同義である。 The polyimide used in the present invention is not particularly limited as long as it is a polymer compound having an imide structure, but it preferably contains a repeating unit represented by the following formula (4).
In formula (4), R 131 represents a divalent organic group and R 132 represents a tetravalent organic group.
When it has a polymerizable group, the polymerizable group may be located on at least one of R 131 and R 132 , and the terminal of the polyimide as shown in the following formula (4-1) or (4-2) may be located in
Formula (4-1)
In formula (4-1), R 133 is a polymerizable group, and other groups are the same as in formula (4).
Formula (4-2)
At least one of R 134 and R 135 is a polymerizable group, and when it is not a polymerizable group, it is an organic group, and the other groups are as defined in formula (4).
R131は、2価の有機基を表す。2価の有機基としては、式(2)におけるR111と同様のものが例示され、好ましい範囲も同様である。
また、R131としては、ジアミンのアミノ基の除去後に残存するジアミン残基が挙げられる。ジアミンとしては、脂肪族、環式脂肪族又は芳香族ジアミンなどが挙げられる。具体的な例としては、ポリイミド前駆体の式(2)中のR111の例が挙げられる。 Examples of the polymerizable group include a group containing an ethylenically unsaturated bond as described above and a crosslinkable group other than the group having an ethylenically unsaturated bond as described above.
R 131 represents a divalent organic group. Examples of the divalent organic group are the same as those for R 111 in formula (2), and the preferred range is also the same.
R 131 also includes a diamine residue remaining after removal of the amino group of the diamine. Diamines include aliphatic, cycloaliphatic or aromatic diamines. A specific example is the example of R 111 in formula (2) of the polyimide precursor.
例えば、R115として例示される4価の有機基の4つの結合子が、上記式(4)中の4つの-C(=O)-の部分と結合して縮合環を形成する。 R 132 represents a tetravalent organic group. Examples of the tetravalent organic group are the same as those for R 115 in formula (2), and the preferred range is also the same.
For example, four bonds of a tetravalent organic group exemplified as R 115 combine with four —C(═O)— moieties in the above formula (4) to form a condensed ring.
ポリイミドのイミド化率(「閉環率」ともいう)は、得られる有機膜の膜強度、絶縁性等の観点からは、70%以上であることが好ましく、80%以上であることがより好ましく、90%以上であることがより好ましい。
上記イミド化率の上限は特に限定されず、100%以下であればよい。
上記イミド化率は、例えば下記方法により測定される。
ポリイミドの赤外吸収スペクトルを測定し、イミド構造由来の吸収ピークである1377cm-1付近のピーク強度P1を求める。次に、そのポリイミドを350℃で1時間熱処理した後、再度、赤外吸収スペクトルを測定し、1377cm-1付近のピーク強度P2を求める。得られたピーク強度P1、P2を用い、下記式に基づいて、ポリイミドのイミド化率を求めることができる。
イミド化率(%)=(ピーク強度P1/ピーク強度P2)×100 -Imidation rate (ring closure rate)-
The imidization rate (also referred to as "ring closure rate") of the polyimide is preferably 70% or more, more preferably 80% or more, from the viewpoint of the film strength, insulating properties, etc. of the resulting organic film. More preferably, it is 90% or more.
The upper limit of the imidization rate is not particularly limited, and may be 100% or less.
The imidization rate is measured, for example, by the method described below.
The infrared absorption spectrum of the polyimide is measured, and the peak intensity P1 near 1377 cm −1 , which is the absorption peak derived from the imide structure, is obtained. Next, after heat-treating the polyimide at 350° C. for 1 hour, the infrared absorption spectrum is measured again to obtain the peak intensity P2 near 1377 cm −1 . Using the obtained peak intensities P1 and P2, the imidization rate of the polyimide can be determined according to the following formula.
Imidation rate (%) = (peak intensity P1/peak intensity P2) x 100
また、ポリイミドの数平均分子量(Mn)は、好ましくは2,000~40,000であり、より好ましくは3,000~30,000であり、更に好ましくは4,000~20,000である。
上記ポリイミドの分子量の分散度は、1.5以上が好ましく、1.8以上がより好ましく、2.0以上であることが更に好ましい。ポリイミドの分子量の分散度の上限値は特に定めるものではないが、例えば、7.0以下が好ましく、6.5以下がより好ましく、6.0以下が更に好ましい。
また、樹脂組成物が特定樹脂として複数種のポリイミドを含む場合、少なくとも1種のポリイミドの重量平均分子量、数平均分子量、及び、分散度が上記範囲であることが好ましい。また、上記複数種のポリイミドを1つの樹脂として算出した重量平均分子量、数平均分子量、及び、分散度が、それぞれ、上記範囲内であることも好ましい。 The weight average molecular weight (Mw) of the polyimide is preferably 5,000 to 100,000, more preferably 10,000 to 50,000, still more preferably 15,000 to 40,000. By setting the weight average molecular weight to 5,000 or more, the folding resistance of the cured film can be improved. A weight-average molecular weight of 15,000 or more is particularly preferable in order to obtain an organic film having excellent mechanical properties (e.g., elongation at break).
Also, the number average molecular weight (Mn) of the polyimide is preferably 2,000 to 40,000, more preferably 3,000 to 30,000, still more preferably 4,000 to 20,000.
The polyimide has a molecular weight distribution of preferably 1.5 or more, more preferably 1.8 or more, and even more preferably 2.0 or more. Although the upper limit of the polyimide molecular weight dispersion is not particularly defined, it is preferably 7.0 or less, more preferably 6.5 or less, and even more preferably 6.0 or less.
Moreover, when the resin composition contains a plurality of types of polyimide as the specific resin, the weight-average molecular weight, number-average molecular weight, and degree of dispersion of at least one type of polyimide are preferably within the above ranges. It is also preferable that the weight-average molecular weight, the number-average molecular weight, and the degree of dispersion calculated using the above plural kinds of polyimides as one resin are within the ranges described above.
ポリイミド前駆体等は、例えば、低温中でテトラカルボン酸二無水物とジアミンを反応させる方法、低温中でテトラカルボン酸二無水物とジアミンを反応させてポリアミック酸を得、縮合剤又はアルキル化剤を用いてエステル化する方法、テトラカルボン酸二無水物とアルコールとによりジエステルを得て、その後ジアミンと縮合剤の存在下で反応させる方法、テトラカルボン酸二無水物とアルコールとによりジエステルを得、その後残りのジカルボン酸をハロゲン化剤を用いて酸ハロゲン化し、ジアミンと反応させる方法、などの方法を利用して得ることができる。上記製造方法のうち、テトラカルボン酸二無水物とアルコールとによりジエステルを得、その後残りのジカルボン酸をハロゲン化剤を用いて酸ハロゲン化し、ジアミンと反応させる方法がより好ましい。
上記縮合剤としては、例えばジシクロヘキシルカルボジイミド、ジイソプロピルカルボジイミド、1-エトキシカルボニル-2-エトキシ-1,2-ジヒドロキノリン、1,1-カルボニルジオキシ-ジ-1,2,3-ベンゾトリアゾール、N,N’-ジスクシンイミジルカーボネート、無水トリフルオロ酢酸等が挙げられる。
上記アルキル化剤としては、N,N-ジメチルホルムアミドジメチルアセタール、N,N-ジメチルホルムアミドジエチルアセタール、N,N-ジアルキルホルムアミドジアルキルアセタール、オルトギ酸トリメチル、オルトギ酸トリエチル等が挙げられる。
上記ハロゲン化剤としては、塩化チオニル、塩化オキサリル、オキシ塩化リン等が挙げられる。
ポリイミド前駆体等の製造方法では、反応に際し、有機溶剤を用いることが好ましい。有機溶剤は1種でもよいし、2種以上でもよい。
有機溶剤としては、原料に応じて適宜定めることができるが、ピリジン、ジエチレングリコールジメチルエーテル(ジグリム)、N-メチルピロリドン、N-エチルピロリドン、プロピオン酸エチル、ジメチルアセトアミド、ジメチルホルムアミド、テトラヒドロフラン、γ-ブチロラクトン等が例示される。
ポリイミド前駆体等の製造方法では、反応に際し、塩基性化合物を添加することが好ましい。塩基性化合物は1種でもよいし、2種以上でもよい。
塩基性化合物は、原料に応じて適宜定めることができるが、トリエチルアミン、ジイソプロピルエチルアミン、ピリジン、1,8-ジアザビシクロ[5.4.0]ウンデカ-7-エン、N,N-ジメチル-4-アミノピリジン等が例示される。 [Method for producing polyimide precursor, etc.]
Polyimide precursors and the like, for example, a method of reacting a tetracarboxylic dianhydride and a diamine at a low temperature, a method of reacting a tetracarboxylic dianhydride and a diamine at a low temperature to obtain a polyamic acid, a condensing agent or an alkylating agent A method of esterification using a tetracarboxylic dianhydride and an alcohol to obtain a diester, followed by a reaction with a diamine in the presence of a condensing agent, a method of reacting a tetracarboxylic dianhydride and an alcohol to obtain a diester, After that, the remaining dicarboxylic acid can be acid-halogenated using a halogenating agent and reacted with a diamine. Among the above production methods, the method of obtaining a diester from a tetracarboxylic dianhydride and an alcohol, then acid-halogenating the remaining dicarboxylic acid with a halogenating agent, and reacting it with a diamine is more preferred.
Examples of the condensing agent include dicyclohexylcarbodiimide, diisopropylcarbodiimide, 1-ethoxycarbonyl-2-ethoxy-1,2-dihydroquinoline, 1,1-carbonyldioxy-di-1,2,3-benzotriazole, N, N'-disuccinimidyl carbonate, trifluoroacetic anhydride and the like can be mentioned.
Examples of the alkylating agent include N,N-dimethylformamide dimethyl acetal, N,N-dimethylformamide diethyl acetal, N,N-dialkylformamide dialkyl acetal, trimethyl orthoformate and triethyl orthoformate.
Examples of the halogenating agent include thionyl chloride, oxalyl chloride, phosphorus oxychloride and the like.
In the method for producing a polyimide precursor or the like, it is preferable to use an organic solvent in the reaction. One type of organic solvent may be used, or two or more types may be used.
The organic solvent can be appropriately determined depending on the raw material, but pyridine, diethylene glycol dimethyl ether (diglyme), N-methylpyrrolidone, N-ethylpyrrolidone, ethyl propionate, dimethylacetamide, dimethylformamide, tetrahydrofuran, γ-butyrolactone, and the like. are exemplified.
In the method for producing a polyimide precursor or the like, it is preferable to add a basic compound during the reaction. One type of basic compound may be used, or two or more types may be used.
The basic compound can be appropriately determined depending on the raw material, but triethylamine, diisopropylethylamine, pyridine, 1,8-diazabicyclo[5.4.0]undec-7-ene, N,N-dimethyl-4-amino Pyridine and the like are exemplified.
ポリイミド前駆体等の製造方法に際し、保存安定性をより向上させるため、ポリイミド前駆体等の樹脂末端に残存するカルボン酸無水物、酸無水物誘導体、或いは、アミノ基を封止することが好ましい。樹脂末端に残存するカルボン酸無水物、及び酸無水物誘導体を封止する際、末端封止剤としては、モノアルコール、フェノール、チオール、チオフェノール、モノアミン等が挙げられ、反応性、膜の安定性から、モノアルコール、フェノール類やモノアミンを用いることがより好ましい。モノアルコールの好ましい化合物としては、メタノール、エタノール、プロパノール、ブタノール、ヘキサノール、オクタノール、ドデシノール、ベンジルアルコール、2-フェニルエタノール、2-メトキシエタノール、2-クロロメタノール、フルフリルアルコール等の1級アルコール、イソプロパノール、2-ブタノール、シクロヘキシルアルコール、シクロペンタノール、1-メトキシ-2-プロパノール等の2級アルコール、t-ブチルアルコール、アダマンタンアルコール等の3級アルコールが挙げられる。フェノール類の好ましい化合物としては、フェノール、メトキシフェノール、メチルフェノール、ナフタレン-1-オール、ナフタレン-2-オール、ヒドロキシスチレン等のフェノール類などが挙げられる。また、モノアミンの好ましい化合物としては、アニリン、2-エチニルアニリン、3-エチニルアニリン、4-エチニルアニリン、5-アミノ-8-ヒドロキシキノリン、1-ヒドロキシ-7-アミノナフタレン、1-ヒドロキシ-6-アミノナフタレン、1-ヒドロキシ-5-アミノナフタレン、1-ヒドロキシ-4-アミノナフタレン、2-ヒドロキシ-7-アミノナフタレン、2-ヒドロキシ-6-アミノナフタレン、2-ヒドロキシ-5-アミノナフタレン、1-カルボキシ-7-アミノナフタレン、1-カルボキシ-6-アミノナフタレン、1-カルボキシ-5-アミノナフタレン、2-カルボキシ-7-アミノナフタレン、2-カルボキシ-6-アミノナフタレン、2-カルボキシ-5-アミノナフタレン、2-アミノ安息香酸、3-アミノ安息香酸、4-アミノ安息香酸、4-アミノサリチル酸、5-アミノサリチル酸、6-アミノサリチル酸、2-アミノベンゼンスルホン酸、3-アミノベンゼンスルホン酸、4-アミノベンゼンスルホン酸、3-アミノ-4,6-ジヒドロキシピリミジン、2-アミノフェノール、3-アミノフェノール、4-アミノフェノール、2-アミノチオフェノール、3-アミノチオフェノール、4-アミノチオフェノールなどが挙げられる。これらを2種以上用いてもよく、複数の末端封止剤を反応させることにより、複数の異なる末端基を導入してもよい。
また、樹脂末端のアミノ基を封止する際、アミノ基と反応可能な官能基を有する化合物で封止することが可能である。アミノ基に対する好ましい封止剤は、カルボン酸無水物、カルボン酸クロリド、カルボン酸ブロミド、スルホン酸クロリド、無水スルホン酸、スルホン酸カルボン酸無水物などが好ましく、カルボン酸無水物、カルボン酸クロリドがより好ましい。カルボン酸無水物の好ましい化合物としては、無水酢酸、無水プロピオン酸、無水シュウ酸、無水コハク酸、無水マレイン酸、無水フタル酸、無水安息香酸、5-ノルボルネン-2,3-ジカルボン酸無水物などが挙げられる。また、カルボン酸クロリドの好ましい化合物としては、塩化アセチル、アクリル酸クロリド、プロピオニルクロリド、メタクリル酸クロリド、ピバロイルクロリド、シクロヘキサンカルボニルクロリド、2-エチルヘキサノイルクロリド、シンナモイルクロリド、1-アダマンタンカルボニルクロリド、ヘプタフルオロブチリルクロリド、ステアリン酸クロリド、ベンゾイルクロリド、などが挙げられる。 -Terminal blocking agent-
In the production method of polyimide precursors, etc., in order to further improve the storage stability, it is preferable to seal the carboxylic anhydride, acid anhydride derivative, or amino group remaining at the end of the resin such as polyimide precursors. When blocking carboxylic acid anhydrides and acid anhydride derivatives remaining at the ends of resins, terminal blocking agents include monoalcohols, phenols, thiols, thiophenols, monoamines, and the like. It is more preferable to use monoalcohols, phenols and monoamines from the viewpoint of their properties. Preferred monoalcohol compounds include primary alcohols such as methanol, ethanol, propanol, butanol, hexanol, octanol, dodecinol, benzyl alcohol, 2-phenylethanol, 2-methoxyethanol, 2-chloromethanol and furfuryl alcohol, and isopropanol. , 2-butanol, cyclohexyl alcohol, cyclopentanol and 1-methoxy-2-propanol, and tertiary alcohols such as t-butyl alcohol and adamantane alcohol. Preferable phenolic compounds include phenols such as phenol, methoxyphenol, methylphenol, naphthalene-1-ol, naphthalene-2-ol, and hydroxystyrene. Preferred monoamine compounds include aniline, 2-ethynylaniline, 3-ethynylaniline, 4-ethynylaniline, 5-amino-8-hydroxyquinoline, 1-hydroxy-7-aminonaphthalene, 1-hydroxy-6- aminonaphthalene, 1-hydroxy-5-aminonaphthalene, 1-hydroxy-4-aminonaphthalene, 2-hydroxy-7-aminonaphthalene, 2-hydroxy-6-aminonaphthalene, 2-hydroxy-5-aminonaphthalene, 1- Carboxy-7-aminonaphthalene, 1-carboxy-6-aminonaphthalene, 1-carboxy-5-aminonaphthalene, 2-carboxy-7-aminonaphthalene, 2-carboxy-6-aminonaphthalene, 2-carboxy-5-amino naphthalene, 2-aminobenzoic acid, 3-aminobenzoic acid, 4-aminobenzoic acid, 4-aminosalicylic acid, 5-aminosalicylic acid, 6-aminosalicylic acid, 2-aminobenzenesulfonic acid, 3-aminobenzenesulfonic acid, 4 -aminobenzenesulfonic acid, 3-amino-4,6-dihydroxypyrimidine, 2-aminophenol, 3-aminophenol, 4-aminophenol, 2-aminothiophenol, 3-aminothiophenol, 4-aminothiophenol, etc. is mentioned. Two or more of these may be used, and a plurality of different terminal groups may be introduced by reacting a plurality of terminal blocking agents.
Moreover, when blocking the amino group at the terminal of the resin, it is possible to block with a compound having a functional group capable of reacting with the amino group. Preferred capping agents for amino groups are carboxylic acid anhydrides, carboxylic acid chlorides, carboxylic acid bromide, sulfonic acid chlorides, sulfonic anhydrides, sulfonic acid carboxylic acid anhydrides, etc., more preferably carboxylic acid anhydrides and carboxylic acid chlorides. preferable. Preferred carboxylic anhydride compounds include acetic anhydride, propionic anhydride, oxalic anhydride, succinic anhydride, maleic anhydride, phthalic anhydride, benzoic anhydride, 5-norbornene-2,3-dicarboxylic anhydride, and the like. is mentioned. Preferred compounds of carboxylic acid chlorides include acetyl chloride, acrylic acid chloride, propionyl chloride, methacrylic acid chloride, pivaloyl chloride, cyclohexanecarbonyl chloride, 2-ethylhexanoyl chloride, cinnamoyl chloride, and 1-adamantanecarbonyl chloride. , heptafluorobutyryl chloride, stearic acid chloride, benzoyl chloride, and the like.
ポリイミド前駆体等の製造に際し、固体を析出する工程を含んでいてもよい。具体的には、反応液中に共存している脱水縮合剤の吸水副生物を必要に応じて濾別した後、水、脂肪族低級アルコール、又はその混合液等の貧溶媒に、得られた重合体成分を投入し、重合体成分を析出させることで、固体として析出させ、乾燥させることでポリイミド前駆体等を得ることができる。精製度を向上させるために、ポリイミド前駆体等を再溶解、再沈析出、乾燥等の操作を繰返してもよい。さらに、イオン交換樹脂を用いてイオン性不純物を除去する工程を含んでいてもよい。 -Solid precipitation-
A step of depositing a solid may be included in the production of the polyimide precursor or the like. Specifically, after filtering off the water absorption by-products of the dehydration condensation agent coexisting in the reaction solution as necessary, water, aliphatic lower alcohol, or a poor solvent such as a mixture thereof, the obtained A polyimide precursor or the like can be obtained by adding a polymer component and depositing the polymer component, depositing it as a solid, and drying it. In order to improve the degree of purification, operations such as redissolution, reprecipitation, drying, etc. of the polyimide precursor may be repeated. Furthermore, a step of removing ionic impurities using an ion exchange resin may be included.
本発明の樹脂組成物における特定樹脂の含有量は、樹脂組成物の全固形分に対し20質量%以上であることが好ましく、30質量%以上であることがより好ましく、40質量%以上であることが更に好ましく、50質量%以上であることが一層好ましい。また、本発明の樹脂組成物における樹脂の含有量は、樹脂組成物の全固形分に対し、99.5質量%以下であることが好ましく、99質量%以下であることがより好ましく、98質量%以下であることが更に好ましく、97質量%以下であることが一層好ましく、95質量%以下であることがより一層好ましい。
本発明の樹脂組成物は、特定樹脂を1種のみ含んでいてもよいし、2種以上含んでいてもよい。2種以上含む場合、合計量が上記範囲となることが好ましい。 〔Content〕
The content of the specific resin in the resin composition of the present invention is preferably 20% by mass or more, more preferably 30% by mass or more, and 40% by mass or more with respect to the total solid content of the resin composition. is more preferable, and 50% by mass or more is even more preferable. Further, the content of the resin in the resin composition of the present invention is preferably 99.5% by mass or less, more preferably 99% by mass or less, more preferably 98% by mass, based on the total solid content of the resin composition. % or less, more preferably 97 mass % or less, and even more preferably 95 mass % or less.
The resin composition of the present invention may contain only one type of specific resin, or may contain two or more types. When two or more types are included, the total amount is preferably within the above range.
具体的には、本発明の樹脂組成物は、特定樹脂と、後述する他の樹脂とを合計で2種以上含んでもよいし、特定樹脂を2種以上含んでいてもよいが、特定樹脂を2種以上含むことが好ましい。
本発明の樹脂組成物が特定樹脂を2種以上含む場合、例えば、ポリイミド前駆体であって、二無水物由来の構造(上述の式(2)でいうR115)が異なる2種以上のポリイミド前駆体を含むことが好ましい。 Also, the resin composition of the present invention preferably contains at least two resins.
Specifically, the resin composition of the present invention may contain a total of two or more of the specific resin and other resins described later, or may contain two or more of the specific resins. It is preferable to include two or more kinds.
When the resin composition of the present invention contains two or more specific resins, for example, two or more polyimides that are polyimide precursors and have different dianhydride-derived structures (R 115 in the above formula (2)) It preferably contains a precursor.
本発明の樹脂組成物は、上述した特定樹脂と、特定樹脂とは異なる他の樹脂(以下、単に「他の樹脂」ともいう)とを含んでもよい。
他の樹脂としては、フェノール樹脂、ポリアミド、エポキシ樹脂、ポリシロキサン、シロキサン構造を含む樹脂、(メタ)アクリル樹脂、(メタ)アクリルアミド樹脂、ウレタン樹脂、ブチラール樹脂、スチリル樹脂、ポリエーテル樹脂、ポリエステル樹脂等が挙げられる。
例えば、(メタ)アクリル樹脂を更に加えることにより、塗布性に優れた樹脂組成物が得られ、また、耐溶剤性に優れたパターン(硬化物)が得られる。
例えば、後述する重合性化合物に代えて、又は、後述する重合性化合物に加えて、重量平均分子量が20,000以下の重合性基価の高い(例えば、樹脂1gにおける重合性基の含有モル量が1×10-3モル/g以上である)(メタ)アクリル樹脂を樹脂組成物に添加することにより、樹脂組成物の塗布性、パターン(硬化物)の耐溶剤性等を向上させることができる。
また、他の樹脂をフィラーの分散剤として樹脂組成物に添加することもできる。このような態様において、他の樹脂としては、公知のフィラーの分散剤を特に制限なく使用することができる。 <Other resins>
The resin composition of the present invention may contain the specific resin described above and other resins different from the specific resin (hereinafter also simply referred to as "other resins").
Other resins include phenolic resins, polyamides, epoxy resins, polysiloxanes, resins containing siloxane structures, (meth)acrylic resins, (meth)acrylamide resins, urethane resins, butyral resins, styryl resins, polyether resins, and polyester resins. etc.
For example, by further adding a (meth)acrylic resin, a resin composition having excellent applicability can be obtained, and a pattern (cured product) having excellent solvent resistance can be obtained.
For example, instead of the polymerizable compound described later, or in addition to the polymerizable compound described later, a high polymerizable group value having a weight average molecular weight of 20,000 or less (for example, the molar amount of the polymerizable group in 1 g of the resin is 1×10 −3 mol/g or more), the coating properties of the resin composition, the solvent resistance of the pattern (cured product), etc. can be improved. can.
Other resins can also be added to the resin composition as dispersants for fillers. In such an embodiment, as the other resin, a known filler dispersant can be used without particular limitation.
また、本発明の樹脂組成物における、他の樹脂の含有量は、樹脂組成物の全固形分に対し、80質量%以下であることが好ましく、75質量%以下であることがより好ましく、70質量%以下であることが更に好ましく、60質量%以下であることが一層好ましく、50質量%以下であることがより一層好ましい。
また、本発明の樹脂組成物の好ましい一態様として、他の樹脂の含有量が低含有量である態様とすることもできる。上記態様において、他の樹脂の含有量は、樹脂組成物の全固形分からに対し、20質量%以下であることが好ましく、15質量%以下であることがより好ましく、10質量%以下であることが更に好ましく、5質量%以下であることが一層好ましく、1質量%以下であることがより一層好ましい。上記含有量の下限は特に限定されず、0質量%以上であればよい。
本発明の樹脂組成物は、他の樹脂を1種のみ含んでいてもよいし、2種以上含んでいてもよい。2種以上含む場合、合計量が上記範囲となることが好ましい。 When the resin composition of the present invention contains other resins, the content of the other resins is preferably 0.01% by mass or more, and 0.05% by mass or more, relative to the total solid content of the resin composition. More preferably, it is more preferably 1% by mass or more, even more preferably 2% by mass or more, even more preferably 5% by mass or more, and further preferably 10% by mass or more. More preferred.
In addition, the content of other resins in the resin composition of the present invention is preferably 80% by mass or less, more preferably 75% by mass or less, based on the total solid content of the resin composition. It is more preferably 60% by mass or less, even more preferably 50% by mass or less.
In addition, as a preferred embodiment of the resin composition of the present invention, the content of other resins may be low. In the above aspect, the content of the other resin is preferably 20% by mass or less, more preferably 15% by mass or less, and 10% by mass or less, relative to the total solid content of the resin composition. is more preferable, 5% by mass or less is even more preferable, and 1% by mass or less is even more preferable. The lower limit of the content is not particularly limited as long as it is 0% by mass or more.
The resin composition of the present invention may contain only one kind of other resin, or may contain two or more kinds thereof. When two or more types are included, the total amount is preferably within the above range.
本発明の樹脂組成物は、重合性化合物を含むことが好ましい。
重合性化合物としては、ラジカル架橋剤、又は、他の架橋剤が挙げられる。 <Polymerizable compound>
The resin composition of the present invention preferably contains a polymerizable compound.
Polymerizable compounds include radical cross-linking agents or other cross-linking agents.
本発明の樹脂組成物は、ラジカル架橋剤を含むことが好ましい。
ラジカル架橋剤は、ラジカル重合性基を有する化合物である。ラジカル重合性基としては、エチレン性不飽和結合を含む基が好ましい。上記エチレン性不飽和結合を含む基としては、ビニル基、アリル基、ビニルフェニル基、(メタ)アクリロイル基、マレイミド基、(メタ)アクリルアミド基などのエチレン性不飽和結合を有する基が挙げられる。
これらの中でも、上記エチレン性不飽和結合を含む基としては、(メタ)アクリロイル基、(メタ)アクリルアミド基、ビニルフェニル基が好ましく、反応性の観点からは、(メタ)アクリロイル基がより好ましい。 [Radical cross-linking agent]
The resin composition of the present invention preferably contains a radical cross-linking agent.
A radical cross-linking agent is a compound having a radically polymerizable group. As the radically polymerizable group, a group containing an ethylenically unsaturated bond is preferred. Examples of the group containing an ethylenically unsaturated bond include groups containing an ethylenically unsaturated bond such as a vinyl group, an allyl group, a vinylphenyl group, a (meth)acryloyl group, a maleimide group, and a (meth)acrylamide group.
Among these, the group containing an ethylenically unsaturated bond is preferably a (meth)acryloyl group, a (meth)acrylamide group, or a vinylphenyl group, and more preferably a (meth)acryloyl group from the viewpoint of reactivity.
上記エチレン性不飽和結合を2個以上有する化合物としては、エチレン性不飽和結合を2~15個有する化合物が好ましく、エチレン性不飽和結合を2~10個有する化合物がより好ましく、2~6個有する化合物が更に好ましい。
また、得られるパターン(硬化物)の膜強度の観点からは、本発明の樹脂組成物は、エチレン性不飽和結合を2個有する化合物と、上記エチレン性不飽和結合を3個以上有する化合物とを含むことも好ましい。 The radical cross-linking agent is preferably a compound having one or more ethylenically unsaturated bonds, more preferably a compound having two or more. The radical cross-linking agent may have 3 or more ethylenically unsaturated bonds.
The compound having two or more ethylenically unsaturated bonds is preferably a compound having 2 to 15 ethylenically unsaturated bonds, more preferably a compound having 2 to 10 ethylenically unsaturated bonds, and 2 to 6. More preferred are compounds having
Further, from the viewpoint of the film strength of the resulting pattern (cured product), the resin composition of the present invention contains a compound having two ethylenically unsaturated bonds and a compound having three or more ethylenically unsaturated bonds. It is also preferred to include
具体的な化合物としては、トリエチレングリコールジアクリレート、トリエチレングリコールジメタクリレート、テトラエチレングリコールジメタクリレート、テトラエチレングリコールジアクリレート、PEG(ポリエチレングリコール)200ジアクリレート、PEG200ジメタクリレート、PEG600ジアクリレート、PEG600ジメタクリレート、ポリテトラエチレングリコールジアクリレート、ポリテトラエチレングリコールジメタクリレート、ネオペンチルグリコールジアクリレート、ネオペンチルグリコールジメタクリレート、3-メチル-1,5-ペンタンジオールジアクリレート、1,6-ヘキサンジオールジアクリレート、1,6ヘキサンジオールジメタクリレート、ジメチロール-トリシクロデカンジアクリレート、ジメチロール-トリシクロデカンジメタクリレート、ビスフェノールAのEO(エチレンオキシド)付加物ジアクリレート、ビスフェノールAのEO付加物ジメタクリレート、ビスフェノールAのPO(プロピレンオキシド)付加物ジアクリレート、ビスフェノールAのPO付加物ジメタクリレート、2-ヒドロキシー3-アクリロイロキシプロピルメタクリレート、イソシアヌル酸EO変性ジアクリレート、イソシアヌル酸変性ジメタクリレート、その他ウレタン結合を有する2官能アクリレート、ウレタン結合を有する2官能メタクリレートを使用することができる。これらは必要に応じ、2種以上を混合し使用することができる。
なお、例えばPEG200ジアクリレートとは、ポリエチレングリコールジアクリレートであって、ポリエチレングリコール鎖の式量が200程度のものをいう。
本発明の樹脂組成物は、パターン(硬化物)の弾性率制御に伴う反り抑制の観点から、ラジカル架橋剤として、単官能ラジカル架橋剤を好ましく用いることができる。単官能ラジカル架橋剤としては、n-ブチル(メタ)アクリレート、2-エチルヘキシル(メタ)アクリレート、2-ヒドロキシエチル(メタ)アクリレート、ブトキシエチル(メタ)アクリレート、カルビトール(メタ)アクリレート、シクロヘキシル(メタ)アクリレート、ベンジル(メタ)アクリレート、フェノキシエチル(メタ)アクリレート、N-メチロール(メタ)アクリルアミド、グリシジル(メタ)アクリレート、ポリエチレングリコールモノ(メタ)アクリレート、ポリプロピレングリコールモノ(メタ)アクリレート等の(メタ)アクリル酸誘導体、N-ビニルピロリドン、N-ビニルカプロラクタム等のN-ビニル化合物類、アリルグリシジルエーテル等が好ましく用いられる。単官能ラジカル架橋剤としては、露光前の揮発を抑制するため、常圧下で100℃以上の沸点を持つ化合物も好ましい。
その他、2官能以上のラジカル架橋剤としては、ジアリルフタレート、トリアリルトリメリテート等のアリル化合物類が挙げられる。 From the viewpoint of pattern resolution and film stretchability, the resin composition preferably uses a bifunctional methacrylate or acrylate.
Specific compounds include triethylene glycol diacrylate, triethylene glycol dimethacrylate, tetraethylene glycol dimethacrylate, tetraethylene glycol diacrylate, PEG (polyethylene glycol) 200 diacrylate, PEG200 dimethacrylate, PEG600 diacrylate, and PEG600 diacrylate. methacrylate, polytetraethylene glycol diacrylate, polytetraethylene glycol dimethacrylate, neopentyl glycol diacrylate, neopentyl glycol dimethacrylate, 3-methyl-1,5-pentanediol diacrylate, 1,6-hexanediol diacrylate, 1,6 hexanediol dimethacrylate, dimethylol-tricyclodecane diacrylate, dimethylol-tricyclodecane dimethacrylate, bisphenol A EO (ethylene oxide) adduct diacrylate, bisphenol A EO adduct dimethacrylate, bisphenol A PO ( Propylene oxide) adduct diacrylate, PO adduct dimethacrylate of bisphenol A, 2-hydroxy-3-acryloyloxypropyl methacrylate, isocyanuric acid EO-modified diacrylate, isocyanuric acid-modified dimethacrylate, other bifunctional acrylates having urethane bonds, Bifunctional methacrylates with urethane bonds can be used. These can be used in combination of two or more as needed.
For example, PEG200 diacrylate is a polyethylene glycol diacrylate having a polyethylene glycol chain formula weight of about 200.
In the resin composition of the present invention, a monofunctional radical cross-linking agent can be preferably used as the radical cross-linking agent from the viewpoint of suppressing warpage associated with the elastic modulus control of the pattern (cured product). Monofunctional radical cross-linking agents include n-butyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, 2-hydroxyethyl (meth)acrylate, butoxyethyl (meth)acrylate, carbitol (meth)acrylate, cyclohexyl (meth)acrylate, ) acrylate, benzyl (meth) acrylate, phenoxyethyl (meth) acrylate, N-methylol (meth) acrylamide, glycidyl (meth) acrylate, polyethylene glycol mono (meth) acrylate, polypropylene glycol mono (meth) acrylate, etc. (meth) Acrylic acid derivatives, N-vinyl compounds such as N-vinylpyrrolidone and N-vinylcaprolactam, and allyl glycidyl ether are preferably used. As the monofunctional radical cross-linking agent, a compound having a boiling point of 100° C. or higher under normal pressure is also preferable in order to suppress volatilization before exposure.
Other di- or higher functional radical cross-linking agents include allyl compounds such as diallyl phthalate and triallyl trimellitate.
本発明の樹脂組成物は、上述したラジカル架橋剤とは異なる、他の架橋剤を含むことも好ましい。
本発明において、他の架橋剤とは、上述したラジカル架橋剤以外の架橋剤をいい、上述の光酸発生剤、又は、光塩基発生剤の感光により、組成物中の他の化合物又はその反応生成物との間で共有結合を形成する反応が促進される基を分子内に複数個有する化合物であることが好ましく、組成物中の他の化合物又はその反応生成物との間で共有結合を形成する反応が酸又は塩基の作用によって促進される基を分子内に複数個有する化合物が好ましい。
上記酸又は塩基は、露光工程において、光酸発生剤又は光塩基発生剤から発生する酸又は塩基であることが好ましい。
他の架橋剤としては、アシルオキシメチル基、メチロール基及びアルコキシメチル基よりなる群から選ばれた少なくとも1種の基を有する化合物が好ましく、アシルオキシメチル基、メチロール基及びアルコキシメチル基よりなる群から選ばれた少なくとも1種の基が窒素原子に直接結合した構造を有する化合物がより好ましい。
他の架橋剤としては、例えば、メラミン、グリコールウリル、尿素、アルキレン尿素、ベンゾグアナミンなどのアミノ基含有化合物にホルムアルデヒド又はホルムアルデヒドとアルコールを反応させ、上記アミノ基の水素原子をアシルオキシメチル基、メチロール基又はアルコキシメチル基で置換した構造を有する化合物が挙げられる。これらの化合物の製造方法は特に限定されず、上記方法により製造された化合物と同様の構造を有する化合物であればよい。また、これらの化合物のメチロール基同士が自己縮合してなるオリゴマーであってもよい。
上記のアミノ基含有化合物として、メラミンを用いた架橋剤をメラミン系架橋剤、グリコールウリル、尿素又はアルキレン尿素を用いた架橋剤を尿素系架橋剤、アルキレン尿素を用いた架橋剤をアルキレン尿素系架橋剤、ベンゾグアナミンを用いた架橋剤をベンゾグアナミン系架橋剤という。
これらの中でも、本発明の樹脂組成物は、尿素系架橋剤及びメラミン系架橋剤よりなる群から選ばれた少なくとも1種の化合物を含むことが好ましく、後述するグリコールウリル系架橋剤及びメラミン系架橋剤よりなる群から選ばれた少なくとも1種の化合物を含むことがより好ましい。 [Other cross-linking agents]
It is also preferable that the resin composition of the present invention contains another cross-linking agent different from the radical cross-linking agent described above.
In the present invention, the other cross-linking agent refers to a cross-linking agent other than the above-described radical cross-linking agent, and the above-described photoacid generator or photobase generator reacts with other compounds in the composition or reacts with them. It is preferable that the compound has a plurality of groups in the molecule that promote the reaction forming covalent bonds with the product, and covalent bonds are formed with other compounds in the composition or reaction products thereof. Compounds having a plurality of groups in the molecule, the reaction of which is promoted by the action of an acid or base, are preferred.
The acid or base is preferably an acid or base generated from a photoacid generator or a photobase generator in the exposure step.
As other cross-linking agents, compounds having at least one group selected from the group consisting of acyloxymethyl groups, methylol groups and alkoxymethyl groups are preferred, and the compounds are preferably selected from the group consisting of acyloxymethyl groups, methylol groups and alkoxymethyl groups. More preferred is a compound having a structure in which at least one group is directly bonded to a nitrogen atom.
Other cross-linking agents include, for example, an amino group-containing compound such as melamine, glycoluril, urea, alkylene urea, and benzoguanamine, which is reacted with formaldehyde or formaldehyde and alcohol, and the hydrogen atom of the amino group is converted to an acyloxymethyl group, methylol group, or A compound having a structure substituted with an alkoxymethyl group can be mentioned. The method for producing these compounds is not particularly limited as long as they have the same structure as the compounds produced by the above methods. Oligomers formed by self-condensation of methylol groups of these compounds may also be used.
As the amino group-containing compound, a melamine-based crosslinking agent is a melamine-based crosslinking agent, a glycoluril, urea or alkyleneurea-based crosslinking agent is a urea-based crosslinking agent, and an alkyleneurea-based crosslinking agent is an alkyleneurea-based crosslinking agent. A cross-linking agent using benzoguanamine is called a benzoguanamine-based cross-linking agent.
Among these, the resin composition of the present invention preferably contains at least one compound selected from the group consisting of urea-based cross-linking agents and melamine-based cross-linking agents. More preferably, it contains at least one compound selected from the group consisting of agents.
上記化合物が有するアルコキシメチル基又はアシルオキシメチル基は、炭素数2~5が好ましく、炭素数2又は3が好ましく、炭素数2がより好ましい。
上記化合物が有するアルコキシメチル基及びアシルオキシメチル基の総数は1~10が好ましく、より好ましくは2~8、特に好ましくは3~6である。
上記化合物の分子量は好ましくは1500以下であり、180~1200が好ましい。 As a compound containing at least one of an alkoxymethyl group and an acyloxymethyl group in the present invention, an alkoxymethyl group or an acyloxymethyl group is directly substituted on the nitrogen atom of an aromatic group or the following urea structure, or on a triazine. can be given as structural examples.
The alkoxymethyl group or acyloxymethyl group of the above compound preferably has 2 to 5 carbon atoms, preferably 2 or 3 carbon atoms, and more preferably 2 carbon atoms.
The total number of alkoxymethyl groups and acyloxymethyl groups in the above compound is preferably 1-10, more preferably 2-8, and particularly preferably 3-6.
The molecular weight of the compound is preferably 1500 or less, preferably 180-1200.
R101及びR102は、それぞれ独立に、一価の有機基を表し、互いに結合して環を形成してもよい。 R 100 represents an alkyl group or an acyl group.
R 101 and R 102 each independently represent a monovalent organic group and may combine with each other to form a ring.
R105は各々独立にアルキル基又はアルケニル基を示し、a、b及びcは各々独立に1~3であり、dは0~4であり、eは0~3であり、fは0~3であり、a+dは5以下であり、b+eは4以下であり、c+fは4以下である。
酸の作用により分解し、アルカリ可溶性基を生じる基、酸の作用により脱離する基、-C(R4)2COOR5で表される基におけるR5については、例えば、-C(R36)(R37)(R38)、-C(R36)(R37)(OR39)、-C(R01)(R02)(OR39)等を挙げることができる。
式中、R36~R39は、各々独立に、アルキル基、シクロアルキル基、アリール基、アラルキル基又はアルケニル基を表す。R36とR37とは、互いに結合して環を形成してもよい。
上記アルキル基としては、炭素数1~10のアルキル基が好ましく、炭素数1~5のアルキル基がより好ましい。
上記アルキル基は、直鎖状、分岐鎖状のいずれであってもよい。
上記シクロアルキル基としては、炭素数3~12のシクロアルキル基が好ましく、炭素数3~8のシクロアルキル基がより好ましい。
上記シクロアルキル基は単環構造であってもよいし、縮合環等の多環構造であってもよい。
上記アリール基は炭素数6~30の芳香族炭化水素基であることが好ましく、フェニル基であることがより好ましい。
上記アラルキル基としては、炭素数7~20のアラルキル基が好ましく、炭素数7~16のアラルキル基がより好ましい。
上記アラルキル基はアルキル基により置換されたアリール基を意図しており、これらのアルキル基及びアリール基の好ましい態様は、上述のアルキル基及びアリール基の好ましい態様と同様である。
上記アルケニル基は炭素数3~20のアルケニル基が好ましく、炭素数3~16のアルケニル基がより好ましい。
また、これらの基は本発明の効果が得られる範囲内で、公知の置換基を更に有していてもよい。 In the formula, X represents a single bond or a divalent organic group, each R 104 independently represents an alkyl group or an acyl group, R 103 represents a hydrogen atom, an alkyl group, an alkenyl group, an aryl group, an aralkyl group , or a group that decomposes under the action of an acid to produce an alkali-soluble group (e.g., a group that leaves under the action of an acid, a group represented by —C(R 4 ) 2 COOR 5 (R 4 is independently It represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms, and R 5 represents a group that leaves under the action of an acid.)).
R 105 each independently represents an alkyl group or alkenyl group, a, b and c are each independently 1 to 3, d is 0 to 4, e is 0 to 3, f is 0 to 3 , a+d is 5 or less, b+e is 4 or less, and c+f is 4 or less.
For R 5 in the group represented by —C(R 4 ) 2 COOR 5 , a group that is decomposed by the action of an acid to produce an alkali-soluble group, a group that is eliminated by the action of an acid, and —C(R 36 )(R 37 )(R 38 ), —C(R 36 )(R 37 )(OR 39 ), —C(R 01 )(R 02 )(OR 39 ), and the like.
In the formula, R 36 to R 39 each independently represent an alkyl group, cycloalkyl group, aryl group, aralkyl group or alkenyl group. R 36 and R 37 may combine with each other to form a ring.
As the alkyl group, an alkyl group having 1 to 10 carbon atoms is preferable, and an alkyl group having 1 to 5 carbon atoms is more preferable.
The alkyl group may be linear or branched.
As the cycloalkyl group, a cycloalkyl group having 3 to 12 carbon atoms is preferable, and a cycloalkyl group having 3 to 8 carbon atoms is more preferable.
The cycloalkyl group may have a monocyclic structure or a polycyclic structure such as a condensed ring.
The aryl group is preferably an aromatic hydrocarbon group having 6 to 30 carbon atoms, more preferably a phenyl group.
As the aralkyl group, an aralkyl group having 7 to 20 carbon atoms is preferable, and an aralkyl group having 7 to 16 carbon atoms is more preferable.
The aralkyl group is intended to be an aryl group substituted with an alkyl group, and preferred embodiments of these alkyl and aryl groups are the same as the preferred embodiments of the alkyl and aryl groups described above.
The alkenyl group is preferably an alkenyl group having 3 to 20 carbon atoms, more preferably an alkenyl group having 3 to 16 carbon atoms.
Moreover, these groups may further have a known substituent within the range in which the effects of the present invention can be obtained.
耐熱性の観点で、アルコキシメチル基又はアシルオキシメチル基が、直接芳香環やトリアジン環上に置換した化合物が好ましい。 As the compound containing at least one of an alkoxymethyl group and an acyloxymethyl group, a commercially available one or a compound synthesized by a known method may be used.
From the viewpoint of heat resistance, compounds in which an alkoxymethyl group or acyloxymethyl group is directly substituted on an aromatic ring or a triazine ring are preferred.
ビスメトキシメチル尿素、ビスエトキシメチル尿素、ビスプロポキシメチル尿素、ビスブトキシメチル尿素等の尿素系架橋剤、
モノヒドロキシメチル化エチレン尿素又はジヒドロキシメチル化エチレン尿素、モノメトキシメチル化エチレン尿素、ジメトキシメチル化エチレン尿素、モノエトキシメチル化エチレン尿素、ジエトキシメチル化エチレン尿素、モノプロポキシメチル化エチレン尿素、ジプロポキシメチル化エチレン尿素、モノブトキシメチル化エチレン尿素、又は、ジブトキシメチル化エチレン尿素などのエチレン尿素系架橋剤、
モノヒドロキシメチル化プロピレン尿素、ジヒドロキシメチル化プロピレン尿素、モノメトキシメチル化プロピレン尿素、ジメトキシメチル化プロピレン尿素、モノエトキシメチル化プロピレン尿素、ジエトキシメチル化プロピレン尿素、モノプロポキシメチル化プロピレン尿素、ジプロポキシメチル化プロピレン尿素、モノブトキシメチル化プロピレン尿素、又は、ジブトキシメチル化プロピレン尿素などのプロピレン尿素系架橋剤、
1,3-ジ(メトキシメチル)4,5-ジヒドロキシ-2-イミダゾリジノン、1,3-ジ(メトキシメチル)-4,5-ジメトキシ-2-イミダゾリジノンなどが挙げられる。 Specific examples of urea-based cross-linking agents include monohydroxymethylated glycoluril, dihydroxymethylated glycoluril, trihydroxymethylated glycoluril, tetrahydroxymethylated glycoluril, monomethoxymethylated glycoluril, and dimethoxymethylated glycol. Uril, trimethoxymethylated glycoluril, tetramethoxymethylated glycoluril, monoethoxymethylated glycoluril, diethoxymethylated glycoluril, triethoxymethylated glycoluril, tetraethoxymethylated glycoluril, monopropoxymethylated glycoluril , dipropoxymethylated glycoluril, tripropoxymethylated glycoluril, tetrapropoxymethylated glycoluril, monobutoxymethylated glycoluril, dibutoxymethylated glycoluril, tributoxymethylated glycoluril, or tetrabutoxymethylated glycoluril glycoluril-based crosslinkers such as uril;
urea-based cross-linking agents such as bismethoxymethylurea, bisethoxymethylurea, bispropoxymethylurea, and bisbutoxymethylurea;
monohydroxymethylated ethyleneurea or dihydroxymethylated ethyleneurea, monomethoxymethylated ethyleneurea, dimethoxymethylated ethyleneurea, monoethoxymethylated ethyleneurea, diethoxymethylated ethyleneurea, monopropoxymethylated ethyleneurea, dipropoxymethyl ethylene urea-based cross-linking agents such as ethylene urea, monobutoxymethyl ethylene urea, or dibutoxymethyl ethylene urea;
Monohydroxymethylated propylene urea, dihydroxymethylated propylene urea, monomethoxymethylated propylene urea, dimethoxymethylated propylene urea, monoethoxymethylated propylene urea, diethoxymethylated propylene urea, monopropoxymethylated propylene urea, dipropoxymethyl propylene urea-based cross-linking agents such as propylene urea, monobutoxymethylated propylene urea, or dibutoxymethylated propylene urea;
1,3-di(methoxymethyl)4,5-dihydroxy-2-imidazolidinone, 1,3-di(methoxymethyl)-4,5-dimethoxy-2-imidazolidinone and the like.
このような化合物の具体例としては、ベンゼンジメタノール、ビス(ヒドロキシメチル)クレゾール、ビス(ヒドロキシメチル)ジメトキシベンゼン、ビス(ヒドロキシメチル)ジフェニルエーテル、ビス(ヒドロキシメチル)ベンゾフェノン、ヒドロキシメチル安息香酸ヒドロキシメチルフェニル、ビス(ヒドロキシメチル)ビフェニル、ジメチルビス(ヒドロキシメチル)ビフェニル、ビス(メトキシメチル)ベンゼン、ビス(メトキシメチル)クレゾール、ビス(メトキシメチル)ジメトキシベンゼン、ビス(メトキシメチル)ジフェニルエーテル、ビス(メトキシメチル)ベンゾフェノン、メトキシメチル安息香酸メトキシメチルフェニル、ビス(メトキシメチル)ビフェニル、ジメチルビス(メトキシメチル)ビフェニル、4,4’,4’’-エチリデントリス[2,6-ビス(メトキシメチル)フェノール]、5,5’-[2,2,2‐トリフルオロ‐1‐(トリフルオロメチル)エチリデン]ビス[2‐ヒドロキシ‐1,3‐ベンゼンジメタノール]、3,3’,5,5’-テトラキス(メトキシメチル)-1,1’-ビフェニル-4,4’-ジオール等が挙げられる。 In addition, the compound having at least one group selected from the group consisting of a methylol group and an alkoxymethyl group includes at least one group selected from the group consisting of a methylol group and an alkoxymethyl group on an aromatic ring (preferably a benzene ring). Compounds to which a seed group is directly attached are also preferably used.
Specific examples of such compounds include benzenedimethanol, bis(hydroxymethyl)cresol, bis(hydroxymethyl)dimethoxybenzene, bis(hydroxymethyl)diphenyl ether, bis(hydroxymethyl)benzophenone, hydroxymethylphenyl hydroxymethylbenzoate. , bis(hydroxymethyl)biphenyl, dimethylbis(hydroxymethyl)biphenyl, bis(methoxymethyl)benzene, bis(methoxymethyl)cresol, bis(methoxymethyl)dimethoxybenzene, bis(methoxymethyl)diphenyl ether, bis(methoxymethyl) Benzophenone, methoxymethylphenyl methoxymethylbenzoate, bis(methoxymethyl)biphenyl, dimethylbis(methoxymethyl)biphenyl, 4,4′,4″-ethylidene tris[2,6-bis(methoxymethyl)phenol], 5 ,5′-[2,2,2-trifluoro-1-(trifluoromethyl)ethylidene]bis[2-hydroxy-1,3-benzenedimethanol], 3,3′,5,5′-tetrakis ( methoxymethyl)-1,1'-biphenyl-4,4'-diol and the like.
エポキシ化合物としては、一分子中にエポキシ基を2以上有する化合物であることが好ましい。エポキシ基は、200℃以下で架橋反応し、かつ、架橋に由来する脱水反応が起こらないため膜収縮が起きにくい。このため、エポキシ化合物を含有することは、本発明の樹脂組成物の低温硬化及び反りの抑制に効果的である。 - Epoxy compound (compound having an epoxy group) -
The epoxy compound is preferably a compound having two or more epoxy groups in one molecule. The epoxy group undergoes a cross-linking reaction at 200° C. or less and does not undergo a dehydration reaction resulting from the cross-linking, so film shrinkage does not easily occur. Therefore, containing an epoxy compound is effective for low-temperature curing and suppression of warpage of the resin composition of the present invention.
オキセタン化合物としては、一分子中にオキセタン環を2つ以上有する化合物、3-エチル-3-ヒドロキシメチルオキセタン、1,4-ビス{[(3-エチル-3-オキセタニル)メトキシ]メチル}ベンゼン、3-エチル-3-(2-エチルヘキシルメチル)オキセタン、1,4-ベンゼンジカルボン酸-ビス[(3-エチル-3-オキセタニル)メチル]エステル等を挙げることができる。具体的な例としては、東亞合成(株)製のアロンオキセタンシリーズ(例えば、OXT-121、OXT-221)が好適に使用することができ、これらは単独で、又は2種以上混合してもよい。 -Oxetane compound (compound having an oxetanyl group)-
Examples of oxetane compounds include compounds having two or more oxetane rings in one molecule, 3-ethyl-3-hydroxymethyloxetane, 1,4-bis{[(3-ethyl-3-oxetanyl)methoxy]methyl}benzene, 3-ethyl-3-(2-ethylhexylmethyl)oxetane, 1,4-benzenedicarboxylic acid-bis[(3-ethyl-3-oxetanyl)methyl]ester and the like can be mentioned. As a specific example, Aron oxetane series manufactured by Toagosei Co., Ltd. (eg, OXT-121, OXT-221) can be suitably used, and these can be used alone or in combination of two or more. good.
ベンゾオキサジン化合物は、開環付加反応に由来する架橋反応のため、硬化時に脱ガスが発生せず、更に熱収縮を小さくして反りの発生が抑えられることから好ましい。 -Benzoxazine compound (compound having a benzoxazolyl group)-
A benzoxazine compound is preferable because it is a cross-linking reaction derived from a ring-opening addition reaction, so that degassing does not occur during curing, and thermal shrinkage is reduced to suppress the occurrence of warping.
本発明の樹脂組成物は、光及び/又は熱により重合を開始させることができる重合開始剤を含むことが好ましい。特に光重合開始剤を含むことが好ましい。
光重合開始剤は、光ラジカル重合開始剤であることが好ましい。光ラジカル重合開始剤としては、特に制限はなく、公知の光ラジカル重合開始剤の中から適宜選択することができる。例えば、紫外線領域から可視領域の光線に対して感光性を有する光ラジカル重合開始剤が好ましい。また、光励起された増感剤と何らかの作用を生じ、活性ラジカルを生成する活性剤であってもよい。 [Polymerization initiator]
The resin composition of the present invention preferably contains a polymerization initiator capable of initiating polymerization by light and/or heat. In particular, it preferably contains a photopolymerization initiator.
The photopolymerization initiator is preferably a photoradical polymerization initiator. The radical photopolymerization initiator is not particularly limited and can be appropriately selected from known radical photopolymerization initiators. For example, a photoradical polymerization initiator having photosensitivity to light in the ultraviolet region to the visible region is preferred. It may also be an activator that produces an active radical by producing some action with a photoexcited sensitizer.
式中、RX1は、アルキル基、アルケニル基、アルコキシ基、アリール基、アリールオキシ基、複素環基、複素環オキシ基、アルキルスルファニル基、アリールスルファニル基、アルキルスルフィニル基、アリールスルフィニル基、アルキルスルホニル基、アリールスルホニル基、アシル基、アシルオキシ基、アミノ基、ホスフィノイル基、カルバモイル基またはスルファモイル基を表し、
RX2は、アルキル基、アルケニル基、アルコキシ基、アリール基、アリールオキシ基、複素環基、複素環オキシ基、アルキルスルファニル基、アリールスルファニル基、アルキルスルフィニル基、アリールスルフィニル基、アルキルスルホニル基、アリールスルホニル基、アシルオキシ基またはアミノ基を表し、
RX3~RX14は、それぞれ独立して水素原子または置換基を表す;
ただし、RX10~RX14のうち少なくとも一つは、電子求引性基である。 The oxime compound OX is preferably at least one selected from the compounds represented by the formula (OX1) and the compounds represented by the formula (OX2), more preferably the compound represented by the formula (OX2). preferable.
In the formula, R X1 is an alkyl group, alkenyl group, alkoxy group, aryl group, aryloxy group, heterocyclic group, heterocyclicoxy group, alkylsulfanyl group, arylsulfanyl group, alkylsulfinyl group, arylsulfinyl group, alkylsulfonyl a group, an arylsulfonyl group, an acyl group, an acyloxy group, an amino group, a phosphinoyl group, a carbamoyl group or a sulfamoyl group,
R X2 is an alkyl group, alkenyl group, alkoxy group, aryl group, aryloxy group, heterocyclic group, heterocyclicoxy group, alkylsulfanyl group, arylsulfanyl group, alkylsulfinyl group, arylsulfinyl group, alkylsulfonyl group, aryl represents a sulfonyl group, an acyloxy group or an amino group,
R X3 to R X14 each independently represent a hydrogen atom or a substituent;
However, at least one of R X10 to R X14 is an electron-withdrawing group.
なお、光重合開始剤は熱重合開始剤としても機能する場合があるため、オーブンやホットプレート等の加熱によって光重合開始剤による架橋を更に進行させられる場合がある。 When a photopolymerization initiator is included, its content is preferably 0.1 to 30% by mass, more preferably 0.1 to 20% by mass, based on the total solid content of the resin composition of the present invention. , more preferably 0.5 to 15% by mass, and still more preferably 1.0 to 10% by mass. Only one type of photopolymerization initiator may be contained, or two or more types may be contained. When two or more photopolymerization initiators are contained, the total amount is preferably within the above range.
In addition, since the photopolymerization initiator may also function as a thermal polymerization initiator, the crosslinking by the photopolymerization initiator may be further advanced by heating with an oven, a hot plate, or the like.
本発明に係る樹脂組成物は、熱重合開始剤を含むことも好ましい。
熱重合開始剤としては、重合性化合物の種類に応じて選択することができるが、熱ラジカル重合開始剤が好ましい。熱ラジカル重合開始剤は、熱のエネルギーによってラジカルを発生し、重合性を有する化合物の重合反応を開始又は促進させる化合物である。
また、上述した光重合開始剤も熱により重合を開始する機能を有する場合があり、熱重合開始剤として添加することができる場合がある。 -Thermal polymerization initiator-
The resin composition according to the present invention preferably also contains a thermal polymerization initiator.
The thermal polymerization initiator can be selected depending on the type of polymerizable compound, but a thermal radical polymerization initiator is preferred. A thermal radical polymerization initiator is a compound that generates radicals by thermal energy and initiates or promotes a polymerization reaction of a polymerizable compound.
Moreover, the photopolymerization initiator described above may also have a function of initiating polymerization by heat, and may be added as a thermal polymerization initiator.
熱重合開始剤としては、市販品を用いることもでき、富士フイルム和光純薬(株)製のV-40、V-601、VF-096、日油(株)製のパーへキシルO、パーへキシルD、パーへキシルI、パーヘキサ25O、パーヘキサ25Z、パークミルD、パークミルD-40、パークミルD-40MB、パークミルH、パークミルP、パークミルND等が挙げられる。
また、熱ラジカル重合開始剤として、具体的には、特開2008-063554号公報の段落0074~0118に記載されている化合物が挙げられ、この内容は本明細書に組み込まれる。 Examples of thermal polymerization initiators include known azo compounds and known peroxide compounds. Examples of azo-based compounds include azobis-based compounds. The azo compound may be a compound having a cyano group or a compound having no cyano group. Peroxide compounds include ketone peroxides, peroxyketals, hydroperoxides, dialkyl peroxides, diacyl peroxides, peroxydicarbonates, peroxyesters, and the like.
Commercially available products can be used as the thermal polymerization initiator, such as V-40, V-601, and VF-096 manufactured by Fuji Film Wako Pure Chemical Industries, Ltd., perhexyl O manufactured by NOF Corporation, per Hexyl D, Perhexyl I, Perhexa 25O, Perhexa 25Z, Percmyl D, Percmyl D-40, Percmyl D-40MB, Percmyl H, Percmyl P, Percmyl ND and the like.
Further, specific examples of thermal radical polymerization initiators include compounds described in paragraphs 0074 to 0118 of JP-A-2008-063554, the contents of which are incorporated herein.
樹脂組成物(特に、第2の樹脂組成物)は、熱重合開始剤を、1種単独で含んでいても、2種以上を含んでいてもよい。2種以上を含む場合、その合計量が上記範囲内となることが好ましい。 The content of the thermal polymerization initiator in the resin composition is preferably 0.05% by mass or more and 10% by mass or less, more preferably 0.1% by mass or more and 10% by mass or less, relative to the total solid content of the composition. , more preferably 0.1% by mass or more and 5% by mass or less, and particularly preferably 0.5% by mass or more and 3% by mass or less.
The resin composition (particularly, the second resin composition) may contain one type of thermal polymerization initiator alone, or two or more types thereof. When two or more types are included, the total amount is preferably within the above range.
樹脂組成物は、増感剤を含んでいてもよい。増感剤は、特定の活性放射線を吸収して電子励起状態となる。電子励起状態となった増感剤は、熱ラジカル重合開始剤、光ラジカル重合開始剤などと接触して、電子移動、エネルギー移動、発熱などの作用が生じる。これにより、熱ラジカル重合開始剤、光ラジカル重合開始剤は化学変化を起こして分解し、ラジカル、酸又は塩基を生成する。
使用可能な増感剤として、ベンゾフェノン系、ミヒラーズケトン系、クマリン系、ピラゾールアゾ系、アニリノアゾ系、トリフェニルメタン系、アントラキノン系、アントラセン系、アントラピリドン系、ベンジリデン系、オキソノール系、ピラゾロトリアゾールアゾ系、ピリドンアゾ系、シアニン系、フェノチアジン系、ピロロピラゾールアゾメチン系、キサンテン系、フタロシアニン系、べンゾピラン系、インジゴ系等の化合物を使用することができる。
増感剤としては、例えば、ミヒラーズケトン、4,4’-ビス(ジエチルアミノ)ベンゾフェノン、2,5-ビス(4’-ジエチルアミノベンザル)シクロペンタン、2,6-ビス(4’-ジエチルアミノベンザル)シクロヘキサノン、2,6-ビス(4’-ジエチルアミノベンザル)-4-メチルシクロヘキサノン、4,4’-ビス(ジメチルアミノ)カルコン、4,4’-ビス(ジエチルアミノ)カルコン、p-ジメチルアミノシンナミリデンインダノン、p-ジメチルアミノベンジリデンインダノン、2-(p-ジメチルアミノフェニルビフェニレン)-ベンゾチアゾール、2-(p-ジメチルアミノフェニルビニレン)ベンゾチアゾール、2-(p-ジメチルアミノフェニルビニレン)イソナフトチアゾール、1,3-ビス(4’-ジメチルアミノベンザル)アセトン、1,3-ビス(4’-ジエチルアミノベンザル)アセトン、3,3’-カルボニル-ビス(7-ジエチルアミノクマリン)、3-アセチル-7-ジメチルアミノクマリン、3-エトキシカルボニル-7-ジメチルアミノクマリン、3-ベンジロキシカルボニル-7-ジメチルアミノクマリン、3-メトキシカルボニル-7-ジエチルアミノクマリン、3-エトキシカルボニル-7-ジエチルアミノクマリン(7-(ジエチルアミノ)クマリン-3-カルボン酸エチル)、N-フェニル-N’-エチルエタノールアミン、N-フェニルジエタノールアミン、N-p-トリルジエタノールアミン、N-フェニルエタノールアミン、4-モルホリノベンゾフェノン、ジメチルアミノ安息香酸イソアミル、ジエチルアミノ安息香酸イソアミル、2-メルカプトベンズイミダゾール、1-フェニル-5-メルカプトテトラゾール、2-メルカプトベンゾチアゾール、2-(p-ジメチルアミノスチリル)ベンズオキサゾール、2-(p-ジメチルアミノスチリル)ベンゾチアゾール、2-(p-ジメチルアミノスチリル)ナフト(1,2-d)チアゾール、2-(p-ジメチルアミノベンゾイル)スチレン、ジフェニルアセトアミド、ベンズアニリド、N-メチルアセトアニリド、3‘,4’-ジメチルアセトアニリド等が挙げられる。
また、他の増感色素を用いてもよい。
増感色素の詳細については、特開2016-027357号公報の段落0161~0163の記載を参酌でき、この内容は本明細書に組み込まれる。 [Sensitizer]
The resin composition may contain a sensitizer. A sensitizer absorbs specific actinic radiation and enters an electronically excited state. The sensitizer in an electronically excited state comes into contact with a thermal radical polymerization initiator, a photoradical polymerization initiator, or the like, and causes electron transfer, energy transfer, heat generation, or the like. As a result, the thermal radical polymerization initiator and the photoradical polymerization initiator undergo chemical changes and are decomposed to generate radicals, acids or bases.
Usable sensitizers include benzophenones, Michler's ketones, coumarins, pyrazole azos, anilinoazos, triphenylmethanes, anthraquinones, anthracenes, anthrapyridones, benzylidenes, oxonols, and pyrazolotriazole azos. , pyridone azo, cyanine, phenothiazine, pyrrolopyrazole azomethine, xanthene, phthalocyanine, benzopyran, and indigo compounds.
Sensitizers include, for example, Michler's ketone, 4,4'-bis(diethylamino)benzophenone, 2,5-bis(4'-diethylaminobenzal)cyclopentane, 2,6-bis(4'-diethylaminobenzal) Cyclohexanone, 2,6-bis(4'-diethylaminobenzal)-4-methylcyclohexanone, 4,4'-bis(dimethylamino)chalcone, 4,4'-bis(diethylamino)chalcone, p-dimethylaminocinnamyl denindanone, p-dimethylaminobenzylideneindanone, 2-(p-dimethylaminophenylbiphenylene)-benzothiazole, 2-(p-dimethylaminophenylvinylene)benzothiazole, 2-(p-dimethylaminophenylvinylene)iso naphthothiazole, 1,3-bis(4′-dimethylaminobenzal)acetone, 1,3-bis(4′-diethylaminobenzal)acetone, 3,3′-carbonyl-bis(7-diethylaminocoumarin), 3 -acetyl-7-dimethylaminocoumarin, 3-ethoxycarbonyl-7-dimethylaminocoumarin, 3-benzyloxycarbonyl-7-dimethylaminocoumarin, 3-methoxycarbonyl-7-diethylaminocoumarin, 3-ethoxycarbonyl-7-diethylamino coumarin (ethyl 7-(diethylamino)coumarin-3-carboxylate), N-phenyl-N'-ethylethanolamine, N-phenyldiethanolamine, Np-tolyldiethanolamine, N-phenylethanolamine, 4-morpholinobenzophenone, isoamyl dimethylaminobenzoate, isoamyl diethylaminobenzoate, 2-mercaptobenzimidazole, 1-phenyl-5-mercaptotetrazole, 2-mercaptobenzothiazole, 2-(p-dimethylaminostyryl)benzoxazole, 2-(p-dimethyl) aminostyryl)benzothiazole, 2-(p-dimethylaminostyryl)naphtho(1,2-d)thiazole, 2-(p-dimethylaminobenzoyl)styrene, diphenylacetamide, benzanilide, N-methylacetanilide, 3',4 '-dimethylacetanilide and the like.
Other sensitizing dyes may also be used.
For details of the sensitizing dye, the description in paragraphs 0161 to 0163 of JP-A-2016-027357 can be referred to, the contents of which are incorporated herein.
本発明の樹脂組成物は、連鎖移動剤を含有してもよい。連鎖移動剤は、例えば高分子辞典第三版(高分子学会編、2005年)683-684頁に定義されている。連鎖移動剤としては、例えば、分子内に-S-S-、-SO2-S-、-N-O-、SH、PH、SiH、及びGeHを有する化合物群、RAFT(Reversible Addition Fragmentation chain Transfer)重合に用いられるチオカルボニルチオ基を有するジチオベンゾアート、トリチオカルボナート、ジチオカルバマート、キサンタート化合物等が用いられる。これらは、低活性のラジカルに水素を供与して、ラジカルを生成するか、若しくは、酸化された後、脱プロトンすることによりラジカルを生成しうる。特に、チオール化合物を好ましく用いることができる。 [Chain transfer agent]
The resin composition of the present invention may contain a chain transfer agent. The chain transfer agent is defined, for example, in Kobunshi Dictionary, 3rd edition (edited by Kobunshi Gakkai, 2005), pp. 683-684. Chain transfer agents include, for example, a group of compounds having —S—S—, —SO 2 —S—, —NO—, SH, PH, SiH, and GeH in the molecule, RAFT (Reversible Addition Fragmentation Chain Transfer ) Dithiobenzoate, trithiocarbonate, dithiocarbamate, xanthate compounds and the like having a thiocarbonylthio group used for polymerization are used. They can either donate hydrogen to less active radicals to generate radicals, or they can be oxidized and then deprotonated to generate radicals. In particular, thiol compounds can be preferably used.
本発明の樹脂組成物は、光酸発生剤を含むことが好ましい。
光酸発生剤とは、200nm~900nmの光照射により、ブレンステッド酸、及び、ルイス酸の少なくとも一方を発生させる化合物を表す。照射される光は、好ましくは波長300nm~450nmの光であり、より好ましくは330nm~420nmの光である。光酸発生剤単独または増感剤との併用において、感光して酸を発生させることが可能な光酸発生剤であることが好ましい。
発生する酸の例としては、ハロゲン化水素、カルボン酸、スルホン酸、スルフィン酸、チオスルフィン酸、リン酸、リン酸モノエステル、リン酸ジエステル、ホウ素誘導体、リン誘導体、アンチモン誘導体、過酸化ハロゲン、スルホンアミド等が好ましく挙げられる。 [Photoacid generator]
The resin composition of the present invention preferably contains a photoacid generator.
A photoacid generator is a compound that generates at least one of Bronsted acid and Lewis acid upon irradiation with light of 200 nm to 900 nm. The light to be irradiated is preferably light with a wavelength of 300 nm to 450 nm, more preferably light with a wavelength of 330 nm to 420 nm. When used alone or in combination with a sensitizer, the photoacid generator is preferably a photoacid generator capable of generating an acid upon exposure.
Examples of generated acids include hydrogen halides, carboxylic acids, sulfonic acids, sulfinic acids, thiosulfinic acids, phosphoric acid, phosphoric monoesters, phosphoric diesters, boron derivatives, phosphorus derivatives, antimony derivatives, halogen peroxides, Sulfonamide and the like are preferred.
感度、保存安定性の観点から、有機ハロゲン化合物、オキシムスルホネート化合物、オニウム塩化合物が好ましく、形成する膜の機械特性等から、オキシムエステルが好ましい。 Examples of the photoacid generator used in the resin composition of the present invention include quinone diazide compounds, oxime sulfonate compounds, organic halogenated compounds, organic borate compounds, disulfone compounds, and onium salt compounds.
Organic halogen compounds, oxime sulfonate compounds, and onium salt compounds are preferred from the viewpoint of sensitivity and storage stability, and oxime esters are preferred from the viewpoint of the mechanical properties of the film to be formed.
オキシムスルホネート化合物は、オキシムスルホネート基を有していれば特に制限はないが、下記式(OS-1)、後述する式(OS-103)、式(OS-104)、又は、式(OS-105)で表されるオキシムスルホネート化合物であることが好ましい。 The photoacid generator is preferably a compound containing an oximesulfonate group (hereinafter also simply referred to as "oximesulfonate compound").
The oxime sulfonate compound is not particularly limited as long as it has an oxime sulfonate group. 105) is preferably an oxime sulfonate compound.
式(OS-1)中、m3は、0~3の整数を表し、0又は1が好ましい。m3が2又は3であるとき、複数のX3は同一でも異なっていてもよい。
式(OS-1)中、R34は、アルキル基又はアリール基を表し、炭素数1~10のアルキル基、炭素数1~10のアルコキシ基、炭素数1~5のハロゲン化アルキル基、炭素数1~5のハロゲン化アルコキシ基、Wで置換されていてもよいフェニル基、Wで置換されていてもよいナフチル基又はWで置換されていてもよいアントラニル基であることが好ましい。Wは、ハロゲン原子、シアノ基、ニトロ基、炭素数1~10のアルキル基、炭素数1~10のアルコキシ基、炭素数1~5のハロゲン化アルキル基又は炭素数1~5のハロゲン化アルコキシ基、炭素数6~20のアリール基、炭素数6~20のハロゲン化アリール基を表す。 In formula (OS- 1 ), X3 represents an alkyl group, an alkoxy group, or a halogen atom. When there are multiple X3's, they may be the same or different. The alkyl group and alkoxy group in X3 above may have a substituent. The alkyl group for X 3 above is preferably a linear or branched alkyl group having 1 to 4 carbon atoms. The alkoxy group for X 3 is preferably a linear or branched alkoxy group having 1 to 4 carbon atoms. As the halogen atom for X3 , a chlorine atom or a fluorine atom is preferable.
In formula (OS-1), m3 represents an integer of 0 to 3, preferably 0 or 1. When m3 is 2 or 3 , multiple X3's may be the same or different.
In formula (OS-1), R 34 represents an alkyl group or an aryl group, an alkyl group having 1 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, a halogenated alkyl group having 1 to 5 carbon atoms, a carbon It is preferably a halogenated alkoxy group of number 1 to 5, a phenyl group optionally substituted with W, a naphthyl group optionally substituted with W or an anthranyl group optionally substituted with W. W is a halogen atom, a cyano group, a nitro group, an alkyl group having 1 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, a halogenated alkyl group having 1 to 5 carbon atoms, or a halogenated alkoxy group having 1 to 5 carbon atoms; group, an aryl group having 6 to 20 carbon atoms, and an aryl halide group having 6 to 20 carbon atoms.
式(OS-103)~式(OS-105)中、Rs1で表されるアルキル基(炭素数1~30が好ましい)、アリール基(炭素数6~30が好ましい)又はヘテロアリール基(炭素数4~30が好ましい)は、本発明の効果が得られる範囲で公知の置換基を有していてもよい。 In formulas (OS-103) to (OS-105), R s1 represents an alkyl group, an aryl group or a heteroaryl group, and R s2 , which may be present in plurality, is each independently a hydrogen atom, an alkyl group, or an aryl represents a group or a halogen atom, and each R s6 which may be present in plurality independently represents a halogen atom, an alkyl group, an alkyloxy group, a sulfonic acid group, an aminosulfonyl group or an alkoxysulfonyl group, and Xs represents O or S. , ns represents 1 or 2, and ms represents an integer of 0-6.
In formulas (OS-103) to (OS-105), an alkyl group (preferably having 1 to 30 carbon atoms), an aryl group (preferably having 6 to 30 carbon atoms) or a heteroaryl group (preferably having 6 to 30 carbon atoms) represented by R s1 Numbers 4 to 30 are preferable) may have a known substituent as long as the effects of the present invention can be obtained.
式(OS-103)、式(OS-104)、又は、式(OS-105)中、XsはO又はSを表し、Oであることが好ましい。上記式(OS-103)~(OS-105)において、Xsを環員として含む環は、5員環又は6員環である。 In formulas (OS-103) to (OS-105), R s2 is preferably a hydrogen atom, an alkyl group (preferably having 1 to 12 carbon atoms) or an aryl group (preferably having 6 to 30 carbon atoms). , a hydrogen atom or an alkyl group. Among R s2 that may be present in the compound at least two times, one or two are preferably an alkyl group, an aryl group or a halogen atom, and one is more preferably an alkyl group, an aryl group or a halogen atom. , one is an alkyl group and the rest are hydrogen atoms. The alkyl group or aryl group represented by R s2 may have a known substituent as long as the effects of the present invention can be obtained.
In formula (OS-103), formula (OS-104), or formula (OS-105), Xs represents O or S, preferably O. In the above formulas (OS-103) to (OS-105), the ring containing Xs as a ring member is a 5- or 6-membered ring.
式(OS-103)~式(OS-105)中、Rs6で表されるアルキル基(炭素数1~30が好ましい)及びアルキルオキシ基(炭素数1~30が好ましい)は、置換基を有していてもよい。
式(OS-103)~式(OS-105)中、msは0~6の整数を表し、0~2の整数であることが好ましく、0又は1であることがより好ましく、0であることが特に好ましい。 In formulas (OS-103) to (OS-105), ns represents 1 or 2, and when Xs is O, ns is preferably 1, and when Xs is S, ns is 2 is preferred.
In formulas (OS-103) to (OS-105), the alkyl group (preferably having 1 to 30 carbon atoms) and alkyloxy group (preferably having 1 to 30 carbon atoms) represented by R s6 are substituents. may have.
In formulas (OS-103) to (OS-105), ms represents an integer of 0 to 6, preferably an integer of 0 to 2, more preferably 0 or 1, and 0 is particularly preferred.
式(OS-106)~式(OS-111)中、Rt7は、水素原子又は臭素原子を表し、水素原子であることが好ましい。 In formulas (OS-106) to (OS-111), R t1 represents an alkyl group, an aryl group or a heteroaryl group, R t7 represents a hydrogen atom or a bromine atom, R t8 represents a hydrogen atom, the number of carbon atoms 1 to 8 alkyl group, halogen atom, chloromethyl group, bromomethyl group, bromoethyl group, methoxymethyl group, phenyl group or chlorophenyl group; R t9 represents a hydrogen atom, a halogen atom, a methyl group or a methoxy group; t2 represents a hydrogen atom or a methyl group.
In formulas (OS-106) to (OS-111), R t7 represents a hydrogen atom or a bromine atom, preferably a hydrogen atom.
Rt2は、水素原子又はメチル基を表し、水素原子であることが好ましい。
また、上記オキシムスルホネート化合物において、オキシムの立体構造(E,Z)については、いずれか一方であっても、混合物であってもよい。
上記式(OS-103)~式(OS-105)で表されるオキシムスルホネート化合物の具体例としては、特開2011-209692号公報の段落番号0088~0095、特開2015-194674号公報の段落番号0168~0194に記載の化合物が例示され、これらの内容は本明細書に組み込まれる。 In formulas (OS-106) to (OS-111), R t9 represents a hydrogen atom, a halogen atom, a methyl group or a methoxy group, preferably a hydrogen atom.
R t2 represents a hydrogen atom or a methyl group, preferably a hydrogen atom.
In the above oxime sulfonate compound, the oximes may have either one of the three-dimensional structures (E, Z) or may be a mixture.
Specific examples of the oxime sulfonate compounds represented by the formulas (OS-103) to (OS-105) include paragraphs 0088 to 0095 of JP-A-2011-209692 and paragraphs of JP-A-2015-194674. Compounds described in numbers 0168-0194 are exemplified, the contents of which are incorporated herein.
式(OS-101)又は式(OS-102)中、Ru2aは、アルキル基又はアリール基を表す。
式(OS-101)又は式(OS-102)中、Xuは、-O-、-S-、-NH-、-NRu5-、-CH2-、-CRu6H-又はCRu6Ru7-を表し、Ru5~Ru7はそれぞれ独立に、アルキル基又はアリール基を表す。 In formula (OS-101) or formula (OS-102), R u9 is a hydrogen atom, an alkyl group, an alkenyl group, an alkoxy group, an alkoxycarbonyl group, an acyl group, a carbamoyl group, a sulfamoyl group, a sulfo group, a cyano group, It represents an aryl group or a heteroaryl group. An aspect in which Ru9 is a cyano group or an aryl group is more preferred, and an aspect in which Ru9 is a cyano group, a phenyl group or a naphthyl group is even more preferred.
In formula (OS-101) or (OS-102), R u2a represents an alkyl group or an aryl group.
In formula (OS-101) or formula (OS-102), Xu is -O-, -S-, -NH-, -NR u5 -, -CH 2 -, -CR u6 H- or CR u6 R u7 —, and R u5 to R u7 each independently represent an alkyl group or an aryl group.
また、上記オキシムスルホネート化合物において、オキシムやベンゾチアゾール環の立体構造(E,Z等)についてはそれぞれ、いずれか一方であっても、混合物であってもよい。
式(OS-101)で表される化合物の具体例としては、特開2011-209692号公報の段落番号0102~0106、特開2015-194674号公報の段落番号0195~0207に記載の化合物が例示され、これらの内容は本明細書に組み込まれる。
上記化合物の中でも、下記b-9、b-16、b-31、b-33が好ましい。
市販品としては、WPAG-336(富士フイルム和光純薬(株)製)、WPAG-443(富士フイルム和光純薬(株)製)、MBZ-101(みどり化学(株)製)等を挙げることができる。 The compound represented by formula (OS-101) is more preferably a compound represented by formula (OS-102).
In the above oxime sulfonate compound, the stereostructures (E, Z, etc.) of the oxime and benzothiazole rings may be either one or a mixture.
Specific examples of the compound represented by formula (OS-101) include compounds described in paragraph numbers 0102 to 0106 of JP-A-2011-209692 and paragraph numbers 0195-0207 of JP-A-2015-194674. and the contents of which are incorporated herein.
Among the above compounds, the following b-9, b-16, b-31 and b-33 are preferred.
Examples of commercially available products include WPAG-336 (manufactured by FUJIFILM Wako Pure Chemical Industries, Ltd.), WPAG-443 (manufactured by FUJIFILM Wako Pure Chemical Industries, Ltd.), MBZ-101 (manufactured by Midori Chemical Co., Ltd.), and the like. can be done.
より好適には、すくなくとも一つのモノ、ジ、又はトリハロゲン置換メチル基がs-トリアジン環に結合したs-トリアジン誘導体、具体的には、例えば、2,4,6-トリス(モノクロロメチル)-s-トリアジン、2,4,6-トリス(ジクロロメチル)-s-トリアジン、2,4,6-トリス(トリクロロメチル)-s-トリアジン、2-メチル-4,6-ビス(トリクロロメチル)-s-トリアジン、2―n-プロピル-4,6-ビス(トリクロロメチル)-s-トリアジン、2-(α,α,β-トリクロロエチル)-4,6-ビス(トリクロロメチル)-s-トリアジン、2-フェニル-4,6-ビス(トリクロロメチル)-s-トリアジン、2-(p-メトキシフェニル)-4,6-ビス(トリクロロメチル)-s-トリアジン、2-(3,4-エポキシフェニル)-4、6-ビス(トリクロロメチル)-s-トリアジン、2-(p-クロロフェニル)-4,6-ビス(トリクロロメチル)-s-トリアジン、2-〔1-(p-メトキシフェニル)-2,4-ブタジエニル〕-4,6-ビス(トリクロロメチル)-s-トリアジン、2-スチリル-4,6-ビス(トリクロロメチル)-s-トリアジン、2-(p-メトキシスチリル)-4,6-ビス(トリクロロメチル)-s-トリアジン、2-(p-i-プロピルオキシスチリル)-4、6-ビス(トリクロロメチル)-s-トリアジン、2-(p-トリル)-4,6-ビス(トリクロロメチル)-s-トリアジン、2-(4-ナトキシナフチル)-4,6-ビス(トリクロロメチル)-s-トリアジン、2-フェニルチオ-4,6-ビス(トリクロロメチル)-s-トリアジン、2-ベンジルチオ-4,6-ビス(トリクロロメチル)-s-トリアジン、2,4,6-トリス(ジブロモメチル)-s-トリアジン、2,4,6-トリス(トリブロモメチル)-s-トリアジン、2-メチル-4,6-ビス(トリブロモメチル)-s-トリアジン、2-メトキシ-4,6-ビス(トリブロモメチル)-s-トリアジン等が挙げられる。 Specific examples of organic halogenated compounds include those described by Wakabayashi et al., "Bull Chem. Soc Japan" 42, 2924 (1969), US Pat. 48-36281, JP-A-55-32070, JP-A-60-239736, JP-A-61-169835, JP-A-61-169837, JP-A-62-58241 , JP-A-62-212401, JP-A-63-70243, JP-A-63-298339, M.P. P. Hutt "Journal of Heterocyclic Chemistry" 1 (No 3), (1970), the contents of which are incorporated herein. Particularly preferred examples include an oxazole compound substituted with a trihalomethyl group: an S-triazine compound.
More preferably, s-triazine derivatives having at least one mono-, di-, or trihalogen-substituted methyl group attached to the s-triazine ring, specifically, for example, 2,4,6-tris(monochloromethyl)- s-triazine, 2,4,6-tris(dichloromethyl)-s-triazine, 2,4,6-tris(trichloromethyl)-s-triazine, 2-methyl-4,6-bis(trichloromethyl)- s-triazine, 2-n-propyl-4,6-bis(trichloromethyl)-s-triazine, 2-(α,α,β-trichloroethyl)-4,6-bis(trichloromethyl)-s-triazine , 2-phenyl-4,6-bis(trichloromethyl)-s-triazine, 2-(p-methoxyphenyl)-4,6-bis(trichloromethyl)-s-triazine, 2-(3,4-epoxy phenyl)-4,6-bis(trichloromethyl)-s-triazine, 2-(p-chlorophenyl)-4,6-bis(trichloromethyl)-s-triazine, 2-[1-(p-methoxyphenyl) -2,4-butadienyl]-4,6-bis(trichloromethyl)-s-triazine, 2-styryl-4,6-bis(trichloromethyl)-s-triazine, 2-(p-methoxystyryl)-4 , 6-bis(trichloromethyl)-s-triazine, 2-(pi-propyloxystyryl)-4, 6-bis(trichloromethyl)-s-triazine, 2-(p-tolyl)-4,6 -bis(trichloromethyl)-s-triazine, 2-(4-nathoxynaphthyl)-4,6-bis(trichloromethyl)-s-triazine, 2-phenylthio-4,6-bis(trichloromethyl)-s-triazine , 2-benzylthio-4,6-bis(trichloromethyl)-s-triazine, 2,4,6-tris(dibromomethyl)-s-triazine, 2,4,6-tris(tribromomethyl)-s- triazine, 2-methyl-4,6-bis(tribromomethyl)-s-triazine, 2-methoxy-4,6-bis(tribromomethyl)-s-triazine and the like.
式(RI-I)中、Ar11は置換基を1~6有していても良い炭素数20以下のアリール基を表し、好ましい置換基としては炭素数1~12のアルキル基、炭素数2~12のアルケニル基、炭素数2~12のアルキニル基、炭素数6~12のアリール基、炭素数1~12のアルコキシ基、炭素数1~12のアリーロキシ基、ハロゲン原子、炭素数1~12のアルキルアミノ基、炭素数2~12のジアルキルアミノ基、アルキル基の炭素数が1~12のアルキルアミド基又はアリール基の炭素数が6~20のアリールアミド基、カルボニル基、カルボキシ基、シアノ基、スルホニル基、炭素数1~12のチオアルキル基、炭素数1~12のチオアリール基が挙げられる。Z11 -は1価の陰イオンを表し、ハロゲンイオン、過塩素酸イオン、ヘキサフルオロホスフェートイオン、テトラフルオロボレートイオン、スルホン酸イオン、スルフィン酸イオン、チオスルホン酸イオン、硫酸イオンであり、安定性の面から過塩素酸イオン、ヘキサフルオロホスフェートイオン、テトラフルオロボレートイオン、スルホン酸イオン、スルフィン酸イオンが好ましい。式(RI-II)中、Ar21、Ar22は各々独立に置換基を1~6有していてもよい炭素数1~20のアリール基を表し、好ましい置換基としては炭素数1~12のアルキル基、炭素数2~12のアルケニル基、炭素数2~12のアルキニル基、炭素数1~12のアリール基、炭素数1~12のアルコキシ基、炭素数1~12のアリーロキシ基、ハロゲン原子、炭素数1~12のモノアルキルアミノ基、アルキル基の炭素数がそれぞれ独立に1~12のジアルキルアミノ基、アルキル基の炭素数が炭素数1~12のアルキルアミド基又はアリールアミド基、カルボニル基、カルボキシ基、シアノ基、スルホニル基、炭素数1~12のチオアルキル基、炭素数1~12のチオアリール基が挙げられる。Z21-は1価の陰イオンを表し、ハロゲンイオン、過塩素酸イオン、ヘキサフルオロホスフェートイオン、テトラフルオロボレートイオン、スルホン酸イオン、スルフィン酸イオン、チオスルホン酸イオン、硫酸イオンであり、安定性、反応性の面から過塩素酸イオン、ヘキサフルオロホスフェートイオン、テトラフルオロボレートイオン、スルホン酸イオン、スルフィン酸イオン、カルボン酸イオンが好ましい。式(RI-III)中、R31、R32、R33は各々独立に置換基を1~6有していても良い炭素数6~20のアリール基又はアルキル基、アルケニル基、アルキニル基を表し、好ましくは反応性、安定性の面から、アリール基であることが望ましい。好ましい置換基としては炭素数1~12のアルキル基、炭素数2~12のアルケニル基、炭素数2~12のアルキニル基、炭素数1~12のアリール基、炭素数1~12のアルコキシ基、炭素数1~12のアリーロキシ基、ハロゲン原子、炭素数1~12のモノアルキルアミノ基、アルキル基の炭素数がそれぞれ独立に炭素数1~12のジアルキルアミノ基、アルキル基の炭素数が炭素数1~12のアルキルアミド基又はアリールアミド基、カルボニル基、カルボキシ基、シアノ基、スルホニル基、炭素数1~12のチオアルキル基、炭素数1~12のチオアリール基が挙げられる。Z31 -は1価の陰イオンを表し、ハロゲンイオン、過塩素酸イオン、ヘキサフルオロホスフェートイオン、テトラフルオロボレートイオン、スルホン酸イオン、スルフィン酸イオン、チオスルホン酸イオン、硫酸イオンであり、安定性、反応性の面から過塩素酸イオン、ヘキサフルオロホスフェートイオン、テトラフルオロボレートイオン、スルホン酸イオン、スルフィン酸イオン、カルボン酸イオンが好ましい。 Onium salts include onium salts represented by the following general formulas (RI-I) to (RI-III).
In formula (RI-I), Ar 11 represents an aryl group having 20 or less carbon atoms which may have 1 to 6 substituents. ~12 alkenyl groups, alkynyl groups having 2 to 12 carbon atoms, aryl groups having 6 to 12 carbon atoms, alkoxy groups having 1 to 12 carbon atoms, aryloxy groups having 1 to 12 carbon atoms, halogen atoms, and 1 to 12 carbon atoms. an alkylamino group, a dialkylamino group having 2 to 12 carbon atoms, an alkylamide group having an alkyl group having 1 to 12 carbon atoms or an arylamide group having an aryl group having 6 to 20 carbon atoms, a carbonyl group, a carboxy group, a cyano groups, sulfonyl groups, thioalkyl groups having 1 to 12 carbon atoms, and thioaryl groups having 1 to 12 carbon atoms. Z 11 - represents a monovalent anion such as a halogen ion, a perchlorate ion, a hexafluorophosphate ion, a tetrafluoroborate ion, a sulfonate ion, a sulfinate ion, a thiosulfonate ion, a sulfate ion, and a stable Perchlorate ion, hexafluorophosphate ion, tetrafluoroborate ion, sulfonate ion, and sulfinate ion are preferred from the aspect. In formula (RI-II), Ar 21 and Ar 22 each independently represent an aryl group having 1 to 20 carbon atoms which may have 1 to 6 substituents, and preferred substituents are 1 to 12 carbon atoms. an alkyl group having 2 to 12 carbon atoms, an alkenyl group having 2 to 12 carbon atoms, an alkynyl group having 2 to 12 carbon atoms, an aryl group having 1 to 12 carbon atoms, an alkoxy group having 1 to 12 carbon atoms, an aryloxy group having 1 to 12 carbon atoms, a halogen an atom, a monoalkylamino group having 1 to 12 carbon atoms, a dialkylamino group having an alkyl group having 1 to 12 carbon atoms, an alkylamido group or an arylamide group having an alkyl group having 1 to 12 carbon atoms, carbonyl group, carboxy group, cyano group, sulfonyl group, thioalkyl group having 1 to 12 carbon atoms, and thioaryl group having 1 to 12 carbon atoms. Z21 − represents a monovalent anion, and is a halogen ion, perchlorate ion, hexafluorophosphate ion, tetrafluoroborate ion, sulfonate ion, sulfinate ion, thiosulfonate ion, sulfate ion, stability, reaction Perchlorate ions, hexafluorophosphate ions, tetrafluoroborate ions, sulfonate ions, sulfinate ions, and carboxylate ions are preferred from the viewpoint of their properties. In formula (RI-III), R 31 , R 32 and R 33 each independently represents an aryl group, an alkyl group, an alkenyl group or an alkynyl group having 6 to 20 carbon atoms which may have 1 to 6 substituents. In view of reactivity and stability, it is preferably an aryl group. Preferred substituents include an alkyl group having 1 to 12 carbon atoms, an alkenyl group having 2 to 12 carbon atoms, an alkynyl group having 2 to 12 carbon atoms, an aryl group having 1 to 12 carbon atoms, an alkoxy group having 1 to 12 carbon atoms, an aryloxy group having 1 to 12 carbon atoms, a halogen atom, a monoalkylamino group having 1 to 12 carbon atoms, a dialkylamino group having 1 to 12 carbon atoms in each alkyl group, and an alkyl group having 1 to 12 carbon atoms; 1 to 12 alkylamide or arylamido groups, carbonyl groups, carboxy groups, cyano groups, sulfonyl groups, C1 to C12 thioalkyl groups, and C1 to C12 thioaryl groups. Z 31 − represents a monovalent anion and is a halogen ion, perchlorate ion, hexafluorophosphate ion, tetrafluoroborate ion, sulfonate ion, sulfinate ion, thiosulfonate ion, sulfate ion, stability, From the viewpoint of reactivity, perchlorate ion, hexafluorophosphate ion, tetrafluoroborate ion, sulfonate ion, sulfinate ion, and carboxylate ion are preferred.
光酸発生剤は、1種単独で使用されても、複数種の組み合わせで使用されてもよい。複数種の組み合わせの場合には、それらの合計量が上記範囲にあることが好ましい。
また、所望の光源に対して、感光性を付与する為、増感剤と併用することも好ましい。 The photoacid generator is preferably used in an amount of 0.1 to 20% by mass, more preferably 0.5 to 18% by mass, and 0.5 to 10% by mass, based on the total solid content of the resin composition. It is more preferably used, more preferably 0.5 to 3% by mass, and even more preferably 0.5 to 1.2% by mass.
A photo-acid generator may be used individually by 1 type, or may be used in multiple types combination. In the case of a combination of multiple types, the total amount thereof is preferably within the above range.
Moreover, in order to impart photosensitivity to a desired light source, it is also preferable to use together with a sensitizer.
本発明の樹脂組成物は、塩基発生剤を含んでもよい。ここで、塩基発生剤とは、物理的または化学的な作用によって塩基を発生することができる化合物である。本発明の樹脂組成物にとって好ましい塩基発生剤としては、熱塩基発生剤および光塩基発生剤が挙げられる。
特に、樹脂組成物が環化樹脂の前駆体を含む場合、樹脂組成物は塩基発生剤を含むことが好ましい。樹脂組成物が熱塩基発生剤を含有することによって、例えば加熱により前駆体の環化反応を促進でき、硬化物の機械特性や耐薬品性が良好なものとなり、例えば半導体パッケージ中に含まれる再配線層用層間絶縁膜としての性能が良好となる。
塩基発生剤としては、イオン型塩基発生剤でもよく、非イオン型塩基発生剤でもよい。塩基発生剤から発生する塩基としては、例えば、2級アミン、3級アミンが挙げられる。
本発明に係る塩基発生剤について特に制限はなく、公知の塩基発生剤を用いることができる。公知の塩基発生剤としては、例えば、カルバモイルオキシム化合物、カルバモイルヒドロキシルアミン化合物、カルバミン酸化合物、ホルムアミド化合物、アセトアミド化合物、カルバメート化合物、ベンジルカルバメート化合物、ニトロベンジルカルバメート化合物、スルホンアミド化合物、イミダゾール誘導体化合物、アミンイミド化合物、ピリジン誘導体化合物、α-アミノアセトフェノン誘導体化合物、4級アンモニウム塩誘導体化合物、ピリジニウム塩、α-ラクトン環誘導体化合物、アミンイミド化合物、フタルイミド誘導体化合物、アシルオキシイミノ化合物、などを用いることができる。
非イオン型塩基発生剤の具体的な化合物としては、式(B1)、式(B2)、又は式(B3)で表される化合物が挙げられる。
The resin composition of the present invention may contain a base generator. Here, the base generator is a compound capable of generating a base by physical or chemical action. Preferred base generators for the resin composition of the present invention include thermal base generators and photobase generators.
In particular, when the resin composition contains a cyclized resin precursor, the resin composition preferably contains a base generator. By containing a thermal base generator in the resin composition, the cyclization reaction of the precursor can be promoted, for example, by heating, and the cured product has good mechanical properties and chemical resistance. Performance as an interlayer insulating film for wiring layers is improved.
The base generator may be an ionic base generator or a non-ionic base generator. Examples of bases generated from base generators include secondary amines and tertiary amines.
There are no particular restrictions on the base generator used in the present invention, and known base generators can be used. Examples of known base generators include carbamoyloxime compounds, carbamoylhydroxylamine compounds, carbamic acid compounds, formamide compounds, acetamide compounds, carbamate compounds, benzylcarbamate compounds, nitrobenzylcarbamate compounds, sulfonamide compounds, imidazole derivative compounds, and amine imides. compounds, pyridine derivative compounds, α-aminoacetophenone derivative compounds, quaternary ammonium salt derivative compounds, pyridinium salts, α-lactone ring derivative compounds, amineimide compounds, phthalimide derivative compounds, acyloxyimino compounds, and the like can be used.
Specific compounds of the nonionic base generator include compounds represented by Formula (B1), Formula (B2), or Formula (B3).
Rb13はアルキル基(炭素数1~24が好ましく、2~18がより好ましく、3~12が更に好ましい)、アルケニル基(炭素数2~24が好ましく、2~18がより好ましく、3~12が更に好ましい)、アリール基(炭素数6~22が好ましく、6~18がより好ましく、6~12が更に好ましい)、アリールアルキル基(炭素数7~23が好ましく、7~19がより好ましく、7~12が更に好ましい)であり、本発明の効果を奏する範囲で置換基を有していてもよい。中でも、Rb13はアリールアルキル基が好ましい。 In the formula, Rb 11 and Rb 12 and Rb 31 and Rb 32 are respectively the same as Rb 1 and Rb 2 in formula (B1).
Rb 13 is an alkyl group (preferably 1 to 24 carbon atoms, more preferably 2 to 18 carbon atoms, still more preferably 3 to 12 carbon atoms), an alkenyl group (preferably 2 to 24 carbon atoms, more preferably 2 to 18 carbon atoms, 3 to 12 is more preferred), an aryl group (preferably 6 to 22 carbon atoms, more preferably 6 to 18, more preferably 6 to 12), an arylalkyl group (preferably 7 to 23 carbon atoms, more preferably 7 to 19, 7 to 12 are more preferable), and may have a substituent within the range in which the effects of the present invention are exhibited. Among them, Rb 13 is preferably an arylalkyl group.
Rb15及びRb16は水素原子、アルキル基(炭素数1~12が好ましく、1~6がより好ましく、1~3が更に好ましい)、アルケニル基(炭素数2~12が好ましく、2~6がより好ましく、2~3が更に好ましい)、アリール基(炭素数6~22が好ましく、6~18がより好ましく、6~10が更に好ましい)、アリールアルキル基(炭素数7~23が好ましく、7~19がより好ましく、7~11が更に好ましい)であり、水素原子又はメチル基が好ましい。
Rb17はアルキル基(炭素数1~24が好ましく、1~12がより好ましく、3~8が更に好ましい)、アルケニル基(炭素数2~12が好ましく、2~10がより好ましく、3~8が更に好ましい)、アリール基(炭素数6~22が好ましく、6~18がより好ましく、6~12が更に好ましい)、アリールアルキル基(炭素数7~23が好ましく、7~19がより好ましく、7~12が更に好ましい)であり、中でもアリール基が好ましい。 Rb 11 and Rb 12 have the same definitions as Rb 11 and Rb 12 in formula (B1-1).
Rb 15 and Rb 16 are hydrogen atoms, alkyl groups (preferably 1 to 12 carbon atoms, more preferably 1 to 6, even more preferably 1 to 3), alkenyl groups (preferably 2 to 12 carbon atoms, 2 to 6 more preferably 2 to 3), an aryl group (preferably 6 to 22 carbon atoms, more preferably 6 to 18, even more preferably 6 to 10), an arylalkyl group (preferably 7 to 23 carbon atoms, 7 to 19 are more preferred, and 7 to 11 are even more preferred), and a hydrogen atom or a methyl group is preferred.
Rb 17 is an alkyl group (preferably 1 to 24 carbon atoms, more preferably 1 to 12 carbon atoms, still more preferably 3 to 8 carbon atoms), an alkenyl group (preferably 2 to 12 carbon atoms, more preferably 2 to 10 carbon atoms, 3 to 8 is more preferred), an aryl group (preferably 6 to 22 carbon atoms, more preferably 6 to 18, more preferably 6 to 12), an arylalkyl group (preferably 7 to 23 carbon atoms, more preferably 7 to 19, 7 to 12 are more preferable), and aryl groups are particularly preferable.
環状アルキル基は、炭素数3~12のものが好ましく、3~6がより好ましい。環状アルキル基は、例えば、シクロプロピル基、シクロブチル基、シクロペンチル基、シクロヘキシル基、シクロオクチル基等が挙げられる。
鎖状アルキル基と環状アルキル基の組合せに係る基は、炭素数4~24のものが好ましく、4~18がより好ましく、4~12がさらに好ましい。鎖状アルキル基と環状アルキル基の組合せに係る基は、例えば、シクロヘキシルメチル基、シクロヘキシルエチル基、シクロヘキシルプロピル基、メチルシクロヘキシルメチル基、エチルシクロヘキシルエチル基等が挙げられる。
酸素原子を鎖中に有するアルキル基は、炭素数2~12のものが好ましく、2~6がより好ましく、2~4がさらに好ましい。酸素原子を鎖中に有するアルキル基は、鎖状でも環状でもよく、直鎖でも分岐でもよい。
なかでも、後述する分解生成塩基の沸点を高める観点で、RN1およびRN2は炭素数5~12のアルキル基が好ましい。ただし、金属(例えば銅)の層と積層する際の密着性を重視する処方においては、環状のアルキル基を有する基や炭素数1~8のアルキル基であることが好ましい。 Aliphatic hydrocarbon groups constituting R N1 and R N2 include linear or branched chain alkyl groups, cyclic alkyl groups, groups related to combinations of chain alkyl groups and cyclic alkyl groups, and oxygen atoms in the chains. Alkyl groups having The linear or branched chain alkyl group preferably has 1 to 24 carbon atoms, more preferably 2 to 18 carbon atoms, and still more preferably 3 to 12 carbon atoms. Linear or branched chain alkyl groups are, for example, methyl, ethyl, propyl, butyl, pentyl, hexyl, heptyl, octyl, nonyl, decyl, undecyl, dodecyl, isopropyl group, isobutyl group, secondary butyl group, tertiary butyl group, isopentyl group, neopentyl group, tertiary pentyl group, isohexyl group and the like.
The cyclic alkyl group preferably has 3 to 12 carbon atoms, more preferably 3 to 6 carbon atoms. Cyclic alkyl groups include, for example, cyclopropyl, cyclobutyl, cyclopentyl, cyclohexyl, and cyclooctyl groups.
Groups associated with a combination of a chain alkyl group and a cyclic alkyl group preferably have 4 to 24 carbon atoms, more preferably 4 to 18 carbon atoms, and even more preferably 4 to 12 carbon atoms. Groups related to combinations of chain alkyl groups and cyclic alkyl groups include, for example, a cyclohexylmethyl group, a cyclohexylethyl group, a cyclohexylpropyl group, a methylcyclohexylmethyl group, and an ethylcyclohexylethyl group.
The alkyl group having an oxygen atom in the chain preferably has 2 to 12 carbon atoms, more preferably 2 to 6 carbon atoms, and still more preferably 2 to 4 carbon atoms. An alkyl group having an oxygen atom in the chain may be chain or cyclic, and may be linear or branched.
Among them, from the viewpoint of raising the boiling point of the decomposition base described later, R 1 N1 and R 2 N2 are preferably alkyl groups having 5 to 12 carbon atoms. However, in a prescription that emphasizes adhesion when laminating with a metal (eg, copper) layer, a group having a cyclic alkyl group or an alkyl group having 1 to 8 carbon atoms is preferable.
2価の炭化水素連結基は、炭素数1~24のものが好ましく、2~12がより好ましく、2~6がさらに好ましい。2価の脂肪族炭化水素基は、炭素数1~12のものが好ましく、2~6がより好ましく、2~4がさらに好ましい。2価の芳香族炭化水素基は、炭素数6~22のものが好ましく、6~18がより好ましく、6~10がさらに好ましい。2価の脂肪族炭化水素基と2価の芳香族炭化水素基の組み合わせに係る基(例えば、アリーレンアルキル基)は、炭素数7~22のものが好ましく、7~18がより好ましく、7~10がさらに好ましい。 The divalent linking group constituting L is not particularly defined, but is preferably a hydrocarbon group, more preferably an aliphatic hydrocarbon group. The hydrocarbon group may have substituents and may have atoms of types other than carbon atoms in the hydrocarbon chain. More specifically, it is preferably a divalent hydrocarbon linking group which may have an oxygen atom in the chain, and a divalent aliphatic hydrocarbon which may have an oxygen atom in the chain group, a divalent aromatic hydrocarbon group, or a group related to a combination of a divalent aliphatic hydrocarbon group which may have an oxygen atom in the chain and a divalent aromatic hydrocarbon group, A divalent aliphatic hydrocarbon group which may have an oxygen atom in the chain is more preferred. These groups preferably have no oxygen atoms.
The divalent hydrocarbon linking group preferably has 1 to 24 carbon atoms, more preferably 2 to 12 carbon atoms, and even more preferably 2 to 6 carbon atoms. The divalent aliphatic hydrocarbon group preferably has 1 to 12 carbon atoms, more preferably 2 to 6 carbon atoms, and still more preferably 2 to 4 carbon atoms. The divalent aromatic hydrocarbon group preferably has 6 to 22 carbon atoms, more preferably 6 to 18 carbon atoms, and even more preferably 6 to 10 carbon atoms. A group related to a combination of a divalent aliphatic hydrocarbon group and a divalent aromatic hydrocarbon group (eg, an arylene alkyl group) preferably has 7 to 22 carbon atoms, more preferably 7 to 18, and 7 to 10 is more preferred.
直鎖または分岐の鎖状アルキレン基は、炭素数1~12のものが好ましく、2~6がより好ましく、2~4がさらに好ましい。
環状アルキレン基は、炭素数3~12のものが好ましく、3~6がより好ましい。
鎖状アルキレン基と環状アルキレン基の組み合わせに係る基は、炭素数4~24のものが好ましく、4~12がより好ましく、4~6がさらに好ましい。
酸素原子を鎖中に有するアルキレン基は、鎖状でも環状でもよく、直鎖でも分岐でもよい。酸素原子を鎖中に有するアルキレン基は、炭素数1~12のものが好ましく、1~6がより好ましく、1~3がさらに好ましい。 Specific examples of the linking group L include a linear or branched chain alkylene group, a cyclic alkylene group, a group related to a combination of a chain alkylene group and a cyclic alkylene group, and an alkylene group having an oxygen atom in the chain. , a linear or branched alkenylene group, a cyclic alkenylene group, an arylene group and an arylenealkylene group are preferred.
The linear or branched chain alkylene group preferably has 1 to 12 carbon atoms, more preferably 2 to 6 carbon atoms, and still more preferably 2 to 4 carbon atoms.
The cyclic alkylene group preferably has 3 to 12 carbon atoms, more preferably 3 to 6 carbon atoms.
The group associated with the combination of a chain alkylene group and a cyclic alkylene group preferably has 4 to 24 carbon atoms, more preferably 4 to 12 carbon atoms, and even more preferably 4 to 6 carbon atoms.
An alkylene group having an oxygen atom in the chain may be chain or cyclic, and may be linear or branched. The alkylene group having an oxygen atom in the chain preferably has 1 to 12 carbon atoms, more preferably 1 to 6 carbon atoms, and still more preferably 1 to 3 carbon atoms.
環状のアルケニレン基は、炭素数3~12のものが好ましく、3~6がより好ましい。環状のアルケニレン基は、C=C結合の数は1~6が好ましく、1~4がより好ましく、1~2がさらに好ましい。
アリーレン基は、炭素数6~22のものが好ましく、6~18がより好ましく、6~10がさらに好ましい。
アリーレンアルキレン基は、炭素数7~23のものが好ましく、7~19がより好ましく、7~11がさらに好ましい。
中でも、鎖状アルキレン基、環状アルキレン基、酸素原子を鎖中に有するアルキレン基、鎖状のアルケニレン基、アリーレン基、アリーレンアルキレン基が好ましく、1,2-エチレン基、プロパンジイル基(特に1,3-プロパンジイル基)、シクロヘキサンジイル基(特に1,2-シクロヘキサンジイル基)、ビニレン基(特にシスビニレン基)、フェニレン基(1,2-フェニレン基)、フェニレンメチレン基(特に1,2-フェニレンメチレン基)、エチレンオキシエチレン基(特に1,2-エチレンオキシ-1,2-エチレン基)がより好ましい。 The linear or branched chain alkenylene group preferably has 2 to 12 carbon atoms, more preferably 2 to 6 carbon atoms, and still more preferably 2 to 3 carbon atoms. The linear or branched chain alkenylene group preferably has 1 to 10 C═C bonds, more preferably 1 to 6, even more preferably 1 to 3.
The cyclic alkenylene group preferably has 3 to 12 carbon atoms, more preferably 3 to 6 carbon atoms. The number of C═C bonds in the cyclic alkenylene group is preferably 1-6, more preferably 1-4, even more preferably 1-2.
The arylene group preferably has 6 to 22 carbon atoms, more preferably 6 to 18 carbon atoms, and even more preferably 6 to 10 carbon atoms.
The arylene alkylene group preferably has 7 to 23 carbon atoms, more preferably 7 to 19 carbon atoms, and even more preferably 7 to 11 carbon atoms.
Among them, a chain alkylene group, a cyclic alkylene group, an alkylene group having an oxygen atom in the chain, a chain alkenylene group, an arylene group, and an arylene alkylene group are preferable, and a 1,2-ethylene group and a propanediyl group (especially 1, 3-propanediyl group), cyclohexanediyl group (especially 1,2-cyclohexanediyl group), vinylene group (especially cis-vinylene group), phenylene group (1,2-phenylene group), phenylenemethylene group (especially 1,2-phenylene methylene group) and ethyleneoxyethylene group (especially 1,2-ethyleneoxy-1,2-ethylene group) are more preferable.
塩基発生剤は、1種又は2種以上を用いることができる。2種以上を用いる場合は、合計量が上記範囲であることが好ましい。 When the resin composition of the present invention contains a base generator, the content of the base generator is preferably 0.1 to 50 parts by mass with respect to 100 parts by mass of the resin in the resin composition of the present invention. The lower limit is more preferably 0.3 parts by mass or more, and even more preferably 0.5 parts by mass or more. The upper limit is more preferably 30 parts by mass or less, still more preferably 20 parts by mass or less, even more preferably 10 parts by mass or less, and may be 5 parts by mass or less, or may be 4 parts by mass or less.
One or two or more base generators can be used. When two or more are used, the total amount is preferably within the above range.
本発明の樹脂組成物は、溶剤を含むことが好ましい。
溶剤は、公知の溶剤を任意に使用できる。溶剤は有機溶剤が好ましい。有機溶剤としては、エステル類、エーテル類、ケトン類、環状炭化水素類、スルホキシド類、アミド類、ウレア類、アルコール類などの化合物が挙げられる。 <Solvent>
The resin composition of the present invention preferably contains a solvent.
Any known solvent can be used as the solvent. The solvent is preferably an organic solvent. Organic solvents include compounds such as esters, ethers, ketones, cyclic hydrocarbons, sulfoxides, amides, ureas, and alcohols.
本発明の樹脂組成物は、電極や配線などに用いられる金属材料との接着性を向上させるための金属接着性改良剤を含んでいることが好ましい。金属接着性改良剤としては、アルコキシシリル基を有するシランカップリング剤、アルミニウム系接着助剤、チタン系接着助剤、スルホンアミド構造を有する化合物及びチオウレア構造を有する化合物、リン酸誘導体化合物、βケトエステル化合物、アミノ化合物等が挙げられる。 <Metal adhesion improver>
The resin composition of the present invention preferably contains a metal adhesion improver for improving adhesion to metal materials used for electrodes, wiring, and the like. Examples of metal adhesion improvers include alkoxysilyl group-containing silane coupling agents, aluminum-based adhesion aids, titanium-based adhesion aids, compounds having a sulfonamide structure and compounds having a thiourea structure, phosphoric acid derivative compounds, and β-ketoesters. compounds, amino compounds, and the like.
シランカップリング剤としては、例えば、国際公開第2015/199219号の段落0167に記載の化合物、特開2014-191002号公報の段落0062~0073に記載の化合物、国際公開第2011/080992号の段落0063~0071に記載の化合物、特開2014-191252号公報の段落0060~0061に記載の化合物、特開2014-041264号公報の段落0045~0052に記載の化合物、国際公開第2014/097594号の段落0055に記載の化合物、特開2018-173573の段落0067~0078に記載の化合物が挙げられ、これらの内容は本明細書に組み込まれる。また、特開2011-128358号公報の段落0050~0058に記載のように異なる2種以上のシランカップリング剤を用いることも好ましい。また、シランカップリング剤は、下記化合物を用いることも好ましい。以下の式中、Meはメチル基を、Etはエチル基を表す。 〔Silane coupling agent〕
Examples of the silane coupling agent include compounds described in paragraph 0167 of WO 2015/199219, compounds described in paragraphs 0062 to 0073 of JP 2014-191002, and paragraphs of WO 2011/080992. Compounds described in 0063-0071, compounds described in paragraphs 0060-0061 of JP-A-2014-191252, compounds described in paragraphs 0045-0052 of JP-A-2014-041264, International Publication No. 2014/097594 Compounds described in paragraph 0055, compounds described in paragraphs 0067 to 0078 of JP-A-2018-173573, the contents of which are incorporated herein. It is also preferable to use two or more different silane coupling agents as described in paragraphs 0050 to 0058 of JP-A-2011-128358. Moreover, it is also preferable to use the following compound as a silane coupling agent. In the following formulas, Me represents a methyl group and Et represents an ethyl group.
アルミニウム系接着助剤としては、例えば、アルミニウムトリス(エチルアセトアセテート)、アルミニウムトリス(アセチルアセトネート)、エチルアセトアセテートアルミニウムジイソプロピレート等を挙げることができる。 [Aluminum Adhesion Aid]
Examples of aluminum-based adhesion aids include aluminum tris(ethylacetoacetate), aluminum tris(acetylacetonate), ethylacetoacetate aluminum diisopropylate, and the like.
本発明の樹脂組成物は、マイグレーション抑制剤を更に含むことが好ましい。マイグレーション抑制剤を含むことにより、金属層(金属配線)由来の金属イオンが膜内へ移動することを効果的に抑制可能となる。 <Migration inhibitor>
The resin composition of the present invention preferably further contains a migration inhibitor. By including the migration inhibitor, it becomes possible to effectively suppress the migration of metal ions derived from the metal layer (metal wiring) into the film.
本発明の樹脂組成物は、重合禁止剤を含むことが好ましい。重合禁止剤としてはフェノール系化合物、キノン系化合物、アミノ系化合物、N-オキシルフリーラジカル化合物系化合物、ニトロ系化合物、ニトロソ系化合物、ヘテロ芳香環系化合物、金属化合物などが挙げられる。 <Polymerization inhibitor>
The resin composition of the present invention preferably contains a polymerization inhibitor. Polymerization inhibitors include phenol compounds, quinone compounds, amino compounds, N-oxyl free radical compound compounds, nitro compounds, nitroso compounds, heteroaromatic compounds, metal compounds and the like.
本発明の樹脂組成物は、露光から加熱までの経時による性能変化を低減するために、酸捕捉剤を含有することが好ましい。ここで酸捕捉剤とは、系中に存在することで発生酸を捕捉することができる化合物を指し、酸性度が低くpKaの高い化合物であることが好ましい。酸捕捉剤としては、アミノ基を有する化合物が好ましく、1級アミン、2級アミン、3級アミン、アンモニウム塩、3級アミドなどが好ましく、1級アミン、2級アミン、3級アミン、アンモニウム塩が好ましく、2級アミン、3級アミン、アンモニウム塩がより好ましい。
酸捕捉剤としては、イミダゾール構造、ジアザビシクロ構造、オニウム構造、トリアルキルアミン構造、アニリン構造又はピリジン構造を有する化合物、水酸基及び/又はエーテル結合を有するアルキルアミン誘導体、水酸基及び/又はエーテル結合を有するアニリン誘導体等を好ましく挙げることができる。オニウム構造を有する場合、酸捕捉剤はアンモニウム、ジアゾニウム、ヨードニウム、スルホニウム、ホスホニウム、ピリジニウムなどから選択されるカチオンと、酸発生剤が発生する酸より酸性度の低い酸のアニオンとを有する塩であることが好ましい。 <Acid Scavenger>
The resin composition of the present invention preferably contains an acid scavenger in order to reduce performance changes over time from exposure to heating. Here, the acid scavenger refers to a compound that can scavenge the generated acid when present in the system, and is preferably a compound with low acidity and high pKa. The acid scavenger is preferably a compound having an amino group, preferably a primary amine, secondary amine, tertiary amine, ammonium salt, tertiary amide, etc. Primary amine, secondary amine, tertiary amine, ammonium salt are preferred, and secondary amines, tertiary amines and ammonium salts are more preferred.
Examples of acid scavengers include compounds having an imidazole structure, diazabicyclo structure, onium structure, trialkylamine structure, aniline structure or pyridine structure, alkylamine derivatives having hydroxyl groups and/or ether bonds, and anilines having hydroxyl groups and/or ether bonds. Derivatives and the like can be mentioned preferably. When having an onium structure, the acid scavenger is a salt having a cation selected from ammonium, diazonium, iodonium, sulfonium, phosphonium, pyridinium, etc., and an anion of an acid less acidic than the acid generated by the acid generator. is preferred.
本発明に係る組成物は、酸捕捉剤を含有してもしなくてもよいが、含有する場合、酸捕捉剤の含有量は、組成物の全固形分を基準として、通常は0.001~10質量%であり、好ましくは0.01~5質量%である。 These acid scavengers may be used singly or in combination of two or more.
The composition according to the present invention may or may not contain an acid scavenger, but when it does, the content of the acid scavenger is usually from 0.001 to 0.001 based on the total solid content of the composition. 10% by mass, preferably 0.01 to 5% by mass.
フィラーは、熱伝導性であることが好ましい。フィラーは電気絶縁性であっても、半導体や導電性であってもよい。電気絶縁性および導電性の程度は、設計や目的に応じて、適宜選択される。
例えば、電気絶縁性フィラーの場合には、そのフィラーの体積抵抗率の下限は、1.0×1011Ω・cm以上であることが好ましく、3.0×1011Ω・cm以上であることがより好ましく、1.0×1012Ω・cm以上であることが特に好ましい。また、体積抵抗率の上限は、特に限定されないが、例えば、1.0×1018以下Ω・cmであることが好ましい。
一方、半導体や、導電性フィラーの場合には、そのフィラーの体積抵抗率の下限は特に限定されないが、実用的には1.0×10-7Ω・cm以上である。また、体積抵抗率の上限は、1.0×1011Ω・cm未満であることが好ましい。 The resin composition of the present invention may contain a filler.
The filler is preferably thermally conductive. The filler may be electrically insulating, semiconducting, or electrically conductive. The degree of electrical insulation and conductivity is appropriately selected according to the design and purpose.
For example, in the case of an electrically insulating filler, the lower limit of the volume resistivity of the filler is preferably 1.0×10 11 Ω·cm or more, more preferably 3.0×10 11 Ω·cm or more. is more preferable, and 1.0×10 12 Ω·cm or more is particularly preferable. Although the upper limit of the volume resistivity is not particularly limited, it is preferably 1.0×10 18 or less Ω·cm, for example.
On the other hand, in the case of a semiconductor or a conductive filler, the lower limit of the volume resistivity of the filler is not particularly limited, but practically it is 1.0×10 −7 Ω·cm or more. Moreover, the upper limit of the volume resistivity is preferably less than 1.0×10 11 Ω·cm.
また、フィラーの平均粒子径は、0.01μm以上であることが好ましく、0.05μm以上であることがより好ましく、0.1μm以上であることが更に好ましく、0.3μm以上であることが特に好ましい。
フィラーの「平均粒子径」は、ポリイミド含有部中のフィラーを走査型電子顕微鏡(SEM)で観察し、フィラーの粒子が凝集していない部分(一次粒子)を観測して求めることができる。
平均粒子径は、SEMにより観察された各粒子のみかけ上の輪郭に対する最小包含円の直径の平均値として算出することができる。
具体的には、後述する実施例に記載した方法により記載することができる。 Regarding the size of the filler, the average particle size of the filler is preferably 30 μm or less, more preferably 20 μm or less, and even more preferably 10 μm or less.
The average particle size of the filler is preferably 0.01 µm or more, more preferably 0.05 µm or more, still more preferably 0.1 µm or more, and particularly preferably 0.3 µm or more. preferable.
The "average particle size" of the filler can be obtained by observing the filler in the polyimide-containing portion with a scanning electron microscope (SEM) and observing the portion (primary particles) where the particles of the filler are not aggregated.
The average particle size can be calculated as the average diameter of the smallest enclosing circle for the apparent outline of each particle observed by SEM.
Specifically, it can be described by the method described in Examples described later.
また、少なくとも2つのピークの間について、粒度の小さいピークに対する粒度の大きいピークのピーク強度比は、0.2~5.0であることが好ましい。下限は、0.2以上であることが好ましく、0.5以上であることがより好ましい。上限は、5.0以下であることが好ましく、3.0以下であることがより好ましい。 When there are multiple peaks in the particle size distribution of the filler, the peak particle size ratio (the ratio of particle sizes corresponding to peak apexes) between at least two peaks is preferably 1.5 to 50. . The lower limit is preferably 2 or more, more preferably 4 or more. The upper limit is preferably 40 or less, more preferably 20 or less. If the peak ratio is within the above range, it becomes easy for the small-diameter filler to occupy the space between the large-diameter fillers while preventing the large-diameter filler from becoming coarse particles.
Also, between at least two peaks, the peak intensity ratio of the peak with large particle size to the peak with small particle size is preferably 0.2 to 5.0. The lower limit is preferably 0.2 or more, more preferably 0.5 or more. The upper limit is preferably 5.0 or less, more preferably 3.0 or less.
上記含有量の上限は特に限定されないが、リソグラフィーによる加工性の観点から、90質量%以下であることが好ましく、75質量%以下であることがより好ましい。
樹脂組成物がフィラーを含有する場合、フィラー以外の成分の含有量における「樹脂組成物の全固形分に対して」という主旨の記載は、「樹脂組成物の全固形分からフィラーを除いた全質量に対して」と読み替えるものとする。 The filler content is preferably 10% by mass or more, more preferably 30% by mass or more, relative to the total solid content of the resin composition.
Although the upper limit of the content is not particularly limited, it is preferably 90% by mass or less, more preferably 75% by mass or less, from the viewpoint of processability by lithography.
When the resin composition contains a filler, the description to the effect of "relative to the total solid content of the resin composition" in the content of components other than the filler is "total mass excluding the filler from the total solid content of the resin composition shall be read as "against".
本発明の樹脂組成物は、本発明の効果が得られる範囲で、必要に応じて、各種の添加物、例えば、界面活性剤、高級脂肪酸誘導体、紫外線吸収剤、有機チタン化合物、酸化防止剤、凝集防止剤、フェノール系化合物、他の高分子化合物、可塑剤及びその他の助剤類(例えば、消泡剤、難燃剤など)等を配合することができる。これらの成分を適宜含有させることにより、膜物性などの性質を調整することができる。これらの成分は、例えば、特開2012-003225号公報の段落番号0183以降(対応する米国特許出願公開第2013/0034812号明細書の段落番号0237)の記載、特開2008-250074号公報の段落番号0101~0104、0107~0109等の記載を参酌でき、これらの内容は本明細書に組み込まれる。これらの添加剤を配合する場合、その合計配合量は本発明の樹脂組成物の固形分の3質量%以下とすることが好ましい。 <Other additives>
The resin composition of the present invention may contain various additives such as surfactants, higher fatty acid derivatives, ultraviolet absorbers, organic titanium compounds, antioxidants, Aggregation inhibitors, phenolic compounds, other polymer compounds, plasticizers and other auxiliaries (for example, antifoaming agents, flame retardants, etc.), etc., can be blended. Properties such as film physical properties can be adjusted by appropriately containing these components. These components are described, for example, from paragraph number 0183 of JP-A-2012-003225 (paragraph number 0237 of corresponding US Patent Application Publication No. 2013/0034812), paragraph of JP-A-2008-250074 The descriptions of numbers 0101 to 0104, 0107 to 0109, etc. can be referred to, and the contents thereof are incorporated herein. When these additives are blended, the total blending amount is preferably 3% by mass or less of the solid content of the resin composition of the present invention.
界面活性剤としては、フッ素系界面活性剤、シリコーン系界面活性剤、炭化水素系界面活性剤などの各種界面活性剤を使用できる。界面活性剤はノニオン型界面活性剤であってもよく、カチオン型界面活性剤であってもよく、アニオン型界面活性剤であってもよい。 [Surfactant]
As the surfactant, various surfactants such as fluorine-based surfactants, silicone-based surfactants, and hydrocarbon-based surfactants can be used. The surfactant may be a nonionic surfactant, a cationic surfactant, or an anionic surfactant.
フッ素系界面活性剤は、フッ素原子を有する(メタ)アクリレート化合物に由来する繰り返し単位と、アルキレンオキシ基(好ましくはエチレンオキシ基、プロピレンオキシ基)を2以上(好ましくは5以上)有する(メタ)アクリレート化合物に由来する繰り返し単位と、を含む含フッ素高分子化合物も好ましく用いることができ、下記化合物も本発明で用いられるフッ素系界面活性剤として例示される。
The fluorosurfactant has a repeating unit derived from a (meth)acrylate compound having a fluorine atom and 2 or more (preferably 5 or more) alkyleneoxy groups (preferably ethyleneoxy groups and propyleneoxy groups) (meta) A fluorine-containing polymer compound containing a repeating unit derived from an acrylate compound can also be preferably used, and the following compounds are also exemplified as fluorine-based surfactants used in the present invention.
フッ素系界面活性剤は、エチレン性不飽和基を側鎖に有する含フッ素重合体をフッ素系界面活性剤として用いることもできる。具体例としては、特開2010-164965号公報の段落0050~0090および段落0289~0295に記載された化合物が挙げられ、この内容は本明細書に組み込まれる。また、市販品としては、例えばDIC(株)製のメガファックRS-101、RS-102、RS-718K等が挙げられる。 The weight average molecular weight of the above compound is preferably 3,000 to 50,000, more preferably 5,000 to 30,000.
A fluorine-containing polymer having an ethylenically unsaturated group in a side chain can also be used as a fluorine-based surfactant. Specific examples include compounds described in paragraphs 0050 to 0090 and paragraphs 0289 to 0295 of JP-A-2010-164965, the contents of which are incorporated herein. Commercially available products include Megafac RS-101, RS-102 and RS-718K manufactured by DIC Corporation.
界面活性剤の含有量は、組成物の全固形分に対して、0.001~2.0質量%が好ましく、0.005~1.0質量%がより好ましい。 Only one type of surfactant may be used, or two or more types may be used in combination.
The surfactant content is preferably 0.001 to 2.0% by mass, more preferably 0.005 to 1.0% by mass, based on the total solid content of the composition.
本発明の樹脂組成物は、酸素に起因する重合阻害を防止するために、ベヘン酸やベヘン酸アミドのような高級脂肪酸誘導体を添加して、塗布後の乾燥の過程で本発明の樹脂組成物の表面に偏在させてもよい。 [Higher Fatty Acid Derivative]
In order to prevent polymerization inhibition caused by oxygen, the resin composition of the present invention is added with a higher fatty acid derivative such as behenic acid or behenic acid amide, and the resin composition of the present invention is dried in the process of drying after coating. may be unevenly distributed on the surface of the
本発明の組成物は、紫外線吸収剤を含んでいてもよい。紫外線吸収剤としては、サリシレート系、ベンゾフェノン系、ベンゾトリアゾール系、置換アクリロニトリル系、トリアジン系などの紫外線吸収剤を使用することができる。
サリシレート系紫外線吸収剤の例としては、フェニルサリシレート、p-オクチルフェニルサリシレート、p-t-ブチルフェニルサリシレートなどが挙げられ、ベンゾフェノン系紫外線吸収剤の例としては、2,2’-ジヒドロキシ-4-メトキシベンゾフェノン、2,2’-ジヒドロキシ-4,4’-ジメトキシベンゾフェノン、2,2’,4,4’-テトラヒドロキシベンゾフェノン、2-ヒドロキシ-4-メトキシベンゾフェノン、2,4-ジヒドロキシベンゾフェノン、2-ヒドロキシ-4-オクトキシベンゾフェノンなどが挙げられる。また、ベンゾトリアゾール系紫外線吸収剤の例としては、2-(2’-ヒドロキシ-3’,5’-ジ-tert-ブチルフェニル)-5-クロロベンゾトリアゾール、2-(2’-ヒドロキシ-3’-tert-ブチル-5’-メチルフェニル)-5-クロロベンゾトリアゾール、2-(2’-ヒドロキシ-3’-tert-アミル-5’-イソブチルフェニル)-5-クロロベンゾトリアゾール、2-(2’-ヒドロキシ-3’-イソブチル-5’-メチルフェニル)-5-クロロベンゾトリアゾール、2-(2’-ヒドロキシ-3’-イソブチル-5’-プロピルフェニル)-5-クロロベンゾトリアゾール、2-(2’-ヒドロキシ-3’,5’-ジ-tert-ブチルフェニル)ベンゾトリアゾール、2-(2’-ヒドロキシ-5’-メチルフェニル)ベンゾトリアゾール、2-[2’-ヒドロキシ-5’-(1,1,3,3-テトラメチル)フェニル]ベンゾトリアゾールなどが挙げられる。 [Ultraviolet absorber]
The composition of the present invention may contain an ultraviolet absorber. As the ultraviolet absorber, salicylate-based, benzophenone-based, benzotriazole-based, substituted acrylonitrile-based, and triazine-based ultraviolet absorbers can be used.
Examples of salicylate-based UV absorbers include phenyl salicylate, p-octylphenyl salicylate, pt-butylphenyl salicylate, and the like. Examples of benzophenone-based UV absorbers include 2,2'-dihydroxy-4- Methoxybenzophenone, 2,2'-dihydroxy-4,4'-dimethoxybenzophenone, 2,2',4,4'-tetrahydroxybenzophenone, 2-hydroxy-4-methoxybenzophenone, 2,4-dihydroxybenzophenone, 2- and hydroxy-4-octoxybenzophenone. Examples of benzotriazole-based UV absorbers include 2-(2'-hydroxy-3',5'-di-tert-butylphenyl)-5-chlorobenzotriazole, 2-(2'-hydroxy-3 '-tert-butyl-5'-methylphenyl)-5-chlorobenzotriazole, 2-(2'-hydroxy-3'-tert-amyl-5'-isobutylphenyl)-5-chlorobenzotriazole, 2-( 2'-hydroxy-3'-isobutyl-5'-methylphenyl)-5-chlorobenzotriazole, 2-(2'-hydroxy-3'-isobutyl-5'-propylphenyl)-5-chlorobenzotriazole, 2 -(2'-hydroxy-3',5'-di-tert-butylphenyl)benzotriazole, 2-(2'-hydroxy-5'-methylphenyl)benzotriazole, 2-[2'-hydroxy-5' -(1,1,3,3-tetramethyl)phenyl]benzotriazole and the like.
本発明の組成物は、紫外線吸収剤を含んでも含まなくてもよいが、含む場合、紫外線吸収剤の含有量は、本発明の組成物の全固形分質量に対して、0.001質量%以上1質量%以下であることが好ましく、0.01質量%以上0.1質量%以下であることがより好ましい。 In the present invention, the above various ultraviolet absorbers may be used singly or in combination of two or more.
The composition of the present invention may or may not contain an ultraviolet absorber, but when it does, the content of the ultraviolet absorber is 0.001% by mass with respect to the total solid mass of the composition of the present invention. It is preferably at least 1% by mass, more preferably at least 0.01% by mass and not more than 0.1% by mass.
本実施形態の樹脂組成物は、有機チタン化合物を含有してもよい。樹脂組成物が有機チタン化合物を含有することにより、低温で硬化した場合であっても耐薬品性に優れる樹脂層を形成できる。 [Organic titanium compound]
The resin composition of this embodiment may contain an organic titanium compound. By including the organic titanium compound in the resin composition, it is possible to form a resin layer having excellent chemical resistance even when cured at a low temperature.
有機チタン化合物の具体例を、以下のI)~VII)に示す:
I)チタンキレート化合物:中でも、樹脂組成物の保存安定性がよく、良好な硬化パターンが得られることから、アルコキシ基を2個以上有するチタンキレート化合物がより好ましい。具体的な例は、チタニウムビス(トリエタノールアミン)ジイソプロポキサイド、チタニウムジ(n-ブトキサイド)ビス(2,4-ペンタンジオネート)、チタニウムジイソプロポキサイドビス(2,4-ペンタンジオネート)、チタニウムジイソプロポキサイドビス(テトラメチルヘプタンジオネート)、チタニウムジイソプロポキサイドビス(エチルアセトアセテート)等である。
II)テトラアルコキシチタン化合物:例えば、チタニウムテトラ(n-ブトキサイド)、チタニウムテトラエトキサイド、チタニウムテトラ(2-エチルヘキソキサイド)、チタニウムテトライソブトキサイド、チタニウムテトライソプロポキサイド、チタニウムテトラメトキサイド、チタニウムテトラメトキシプロポキサイド、チタニウムテトラメチルフェノキサイド、チタニウムテトラ(n-ノニロキサイド)、チタニウムテトラ(n-プロポキサイド)、チタニウムテトラステアリロキサイド、チタニウムテトラキス[ビス{2,2-(アリロキシメチル)ブトキサイド}]等である。
III)チタノセン化合物:例えば、ペンタメチルシクロペンタジエニルチタニウムトリメトキサイド、ビス(η5-2,4-シクロペンタジエン-1-イル)ビス(2,6-ジフルオロフェニル)チタニウム、ビス(η5-2,4-シクロペンタジエン-1-イル)ビス(2,6-ジフルオロ-3-(1H-ピロール-1-イル)フェニル)チタニウム等である。
IV)モノアルコキシチタン化合物:例えば、チタニウムトリス(ジオクチルホスフェート)イソプロポキサイド、チタニウムトリス(ドデシルベンゼンスルホネート)イソプロポキサイド等である。
V)チタニウムオキサイド化合物:例えば、チタニウムオキサイドビス(ペンタンジオネート)、チタニウムオキサイドビス(テトラメチルヘプタンジオネート)、フタロシアニンチタニウムオキサイド等である。
VI)チタニウムテトラアセチルアセトネート化合物:例えば、チタニウムテトラアセチルアセトネート等である。
VII)チタネートカップリング剤:例えば、イソプロピルトリドデシルベンゼンスルホニルチタネート等である。 Organotitanium compounds that can be used include those in which organic groups are attached to titanium atoms through covalent or ionic bonds.
Specific examples of organotitanium compounds are shown below in I) to VII):
I) Titanium chelate compound: Among them, a titanium chelate compound having two or more alkoxy groups is more preferable because the storage stability of the resin composition is good and a good curing pattern can be obtained. Specific examples are titanium bis(triethanolamine) diisopropoxide, titanium di(n-butoxide) bis(2,4-pentanedionate), titanium diisopropoxide bis(2,4-pentanedionate ), titanium diisopropoxide bis(tetramethylheptanedionate), titanium diisopropoxide bis(ethylacetoacetate), and the like.
II) Tetraalkoxytitanium compounds: for example titanium tetra(n-butoxide), titanium tetraethoxide, titanium tetra(2-ethylhexoxide), titanium tetraisobutoxide, titanium tetraisopropoxide, titanium tetramethoxide , titanium tetramethoxypropoxide, titanium tetramethylphenoxide, titanium tetra(n-nonyloxide), titanium tetra(n-propoxide), titanium tetrastearyloxide, titanium tetrakis[bis{2,2-(allyloxymethyl) butoxide}] and the like.
III) Titanocene compounds: for example, pentamethylcyclopentadienyltitanium trimethoxide, bis(η5-2,4-cyclopentadien-1-yl)bis(2,6-difluorophenyl)titanium, bis(η5-2, 4-cyclopentadien-1-yl)bis(2,6-difluoro-3-(1H-pyrrol-1-yl)phenyl)titanium and the like.
IV) Monoalkoxy titanium compounds: for example, titanium tris(dioctylphosphate) isopropoxide, titanium tris(dodecylbenzenesulfonate) isopropoxide, and the like.
V) Titanium oxide compounds: for example, titanium oxide bis(pentanedionate), titanium oxide bis(tetramethylheptanedionate), phthalocyanine titanium oxide and the like.
VI) Titanium tetraacetylacetonate compounds: such as titanium tetraacetylacetonate.
VII) Titanate coupling agent: For example, isopropyltridodecylbenzenesulfonyl titanate and the like.
本発明の組成物は、酸化防止剤を含んでいてもよい。添加剤として酸化防止剤を含有することで、硬化後の膜の伸度特性や、金属材料との密着性を向上させることができる。酸化防止剤としては、フェノール化合物、亜リン酸エステル化合物、チオエーテル化合物などが挙げられる。フェノール化合物としては、フェノール系酸化防止剤として知られる任意のフェノール化合物を使用することができる。好ましいフェノール化合物としては、ヒンダードフェノール化合物が挙げられる。フェノール性ヒドロキシ基に隣接する部位(オルト位)に置換基を有する化合物が好ましい。上述の置換基としては炭素数1~22の置換又は無置換のアルキル基が好ましい。また、酸化防止剤は、同一分子内にフェノール基と亜リン酸エステル基を有する化合物も好ましい。また、酸化防止剤は、リン系酸化防止剤も好適に使用することができる。リン系酸化防止剤としてはトリス[2-[[2,4,8,10-テトラキス(1,1-ジメチルエチル)ジベンゾ[d,f][1,3,2]ジオキサホスフェピン-6-イル]オキシ]エチル]アミン、トリス[2-[(4,6,9,11-テトラ-tert-ブチルジベンゾ[d,f][1,3,2]ジオキサホスフェピン-2-イル)オキシ]エチル]アミン、亜リン酸エチルビス(2,4-ジ-tert-ブチル-6-メチルフェニル)などが挙げられる。酸化防止剤の市販品としては、例えば、アデカスタブ AO-20、アデカスタブ AO-30、アデカスタブ AO-40、アデカスタブ AO-50、アデカスタブ AO-50F、アデカスタブ AO-60、アデカスタブ AO-60G、アデカスタブ AO-80、アデカスタブ AO-330(以上、(株)ADEKA製)などが挙げられる。また、酸化防止剤は、特許第6268967号公報の段落番号0023~0048に記載された化合物を使用することもでき、この内容は本明細書に組み込まれる。また、本発明の組成物は、必要に応じて、潜在酸化防止剤を含有してもよい。潜在酸化防止剤としては、酸化防止剤として機能する部位が保護基で保護された化合物であって、100~250℃で加熱するか、又は酸/塩基触媒存在下で80~200℃で加熱することにより保護基が脱離して酸化防止剤として機能する化合物が挙げられる。潜在酸化防止剤としては、国際公開第2014/021023号、国際公開第2017/030005号、特開2017-008219号公報に記載された化合物が挙げられ、この内容は本明細書に組み込まれる。潜在酸化防止剤の市販品としては、アデカアークルズGPA-5001((株)ADEKA製)等が挙げられる。
好ましい酸化防止剤の例としては、2,2-チオビス(4-メチル-6-t-ブチルフェノール)、2,6-ジ-t-ブチルフェノールおよび式(3)で表される化合物が挙げられる。 〔Antioxidant〕
The compositions of the present invention may contain antioxidants. By containing an antioxidant as an additive, it is possible to improve the elongation properties of the cured film and the adhesion to metal materials. Antioxidants include phenol compounds, phosphite ester compounds, thioether compounds and the like. Any phenolic compound known as a phenolic antioxidant can be used as the phenolic compound. Preferred phenolic compounds include hindered phenolic compounds. A compound having a substituent at a site adjacent to the phenolic hydroxy group (ortho position) is preferred. A substituted or unsubstituted alkyl group having 1 to 22 carbon atoms is preferable as the above substituent. The antioxidant is also preferably a compound having a phenol group and a phosphite ester group in the same molecule. Phosphorus-based antioxidants can also be suitably used as antioxidants. As a phosphorus antioxidant, tris[2-[[2,4,8,10-tetrakis(1,1-dimethylethyl)dibenzo[d,f][1,3,2]dioxaphosphepin-6 -yl]oxy]ethyl]amine, tris[2-[(4,6,9,11-tetra-tert-butyldibenzo[d,f][1,3,2]dioxaphosphepin-2-yl ) oxy]ethyl]amine, ethyl bis(2,4-di-tert-butyl-6-methylphenyl) phosphite, and the like. Examples of commercially available antioxidants include Adekastab AO-20, Adekastab AO-30, Adekastab AO-40, Adekastab AO-50, Adekastab AO-50F, Adekastab AO-60, Adekastab AO-60G, Adekastab AO-80. , ADEKA STAB AO-330 (manufactured by ADEKA Corporation) and the like. In addition, as the antioxidant, compounds described in paragraphs 0023 to 0048 of Japanese Patent No. 6268967 can also be used, the contents of which are incorporated herein. The composition of the present invention may also contain latent antioxidants, if desired. The latent antioxidant is a compound in which the site functioning as an antioxidant is protected with a protective group, and is heated at 100 to 250°C, or heated at 80 to 200°C in the presence of an acid/base catalyst. A compound that functions as an antioxidant by removing the protective group by the reaction is exemplified. Examples of latent antioxidants include compounds described in WO 2014/021023, WO 2017/030005, and JP 2017-008219, the contents of which are incorporated herein. Commercially available latent antioxidants include ADEKA Arkles GPA-5001 (manufactured by ADEKA Co., Ltd.).
Examples of preferred antioxidants include 2,2-thiobis(4-methyl-6-t-butylphenol), 2,6-di-t-butylphenol and compounds of formula (3).
本実施形態の樹脂組成物は、必要に応じて凝集防止剤を含有してもよい。凝集防止剤としては、ポリアクリル酸ナトリウム等が挙げられる。 [Anti-aggregation agent]
The resin composition of the present embodiment may contain an anti-aggregation agent as necessary. Anti-aggregating agents include sodium polyacrylate and the like.
本発明の組成物は、凝集防止剤を含んでも含まなくてもよいが、含む場合、凝集防止剤の含有量は、本発明の組成物の全固形分質量に対して、0.01質量%以上10質量%以下であることが好ましく、0.02質量%以上5質量%以下であることがより好ましい。 In the present invention, the aggregation inhibitor may be used alone or in combination of two or more.
The composition of the present invention may or may not contain an anti-aggregating agent, but when it is included, the content of the anti-aggregating agent is 0.01% by mass relative to the total solid mass of the composition of the present invention. It is preferably at least 10% by mass, more preferably at least 0.02% by mass and not more than 5% by mass.
本実施形態の樹脂組成物は、必要に応じてフェノール系化合物を含有してもよい。フェノール系化合物としては、Bis-Z、BisP-EZ、TekP-4HBPA、TrisP-HAP、TrisP-PA、BisOCHP-Z、BisP-MZ、BisP-PZ、BisP-IPZ、BisOCP-IPZ、BisP-CP、BisRS-2P、BisRS-3P、BisP-OCHP、メチレントリス-FR-CR、BisRS-26X(以上、商品名、本州化学工業(株)製)、BIP-PC、BIR-PC、BIR-PTBP、BIR-BIPC-F(以上、商品名、旭有機材工業(株)製)等が挙げられる。 [Phenolic compound]
The resin composition of the present embodiment may contain a phenolic compound as necessary. Examples of phenolic compounds include Bis-Z, BisP-EZ, TekP-4HBPA, TrisP-HAP, TrisP-PA, BisOCHP-Z, BisP-MZ, BisP-PZ, BisP-IPZ, BisOCP-IPZ, BisP-CP, BisRS-2P, BisRS-3P, BisP-OCHP, methylenetris-FR-CR, BisRS-26X (these are trade names, manufactured by Honshu Chemical Industry Co., Ltd.), BIP-PC, BIR-PC, BIR-PTBP, BIR -BIPC-F (these are trade names, manufactured by Asahi Organic Chemicals Industry Co., Ltd.) and the like.
本発明の組成物は、フェノール系化合物を含んでも含まなくてもよいが、含む場合、フェノール系化合物の含有量は、本発明の組成物の全固形分質量に対して、0.01質量%以上30質量%以下であることが好ましく、0.02質量%以上20質量%以下であることがより好ましい。 In the present invention, one type of phenolic compound may be used alone, or two or more types may be used in combination.
The composition of the present invention may or may not contain a phenolic compound, but if it does, the content of the phenolic compound is 0.01% by mass relative to the total solid mass of the composition of the present invention. It is preferably at least 30% by mass, more preferably at least 0.02% by mass and not more than 20% by mass.
他の高分子化合物としては、シロキサン樹脂、(メタ)アクリル酸を共重合した(メタ)アクリルポリマー、ノボラック樹脂、レゾール樹脂、ポリヒドロキシスチレン樹脂およびそれらの共重合体などが挙げられる。他の高分子化合物はメチロール基、アルコキシメチル基、エポキシ基などの架橋基が導入された変性体であってもよい。 [Other polymer compounds]
Other polymer compounds include siloxane resins, (meth)acrylic polymers obtained by copolymerizing (meth)acrylic acid, novolac resins, resole resins, polyhydroxystyrene resins, and copolymers thereof. Other polymer compounds may be modified products into which cross-linking groups such as methylol groups, alkoxymethyl groups and epoxy groups have been introduced.
本発明の組成物は、他の高分子化合物を含んでも含まなくてもよいが、含む場合、他の高分子化合物の含有量は、本発明の組成物の全固形分質量に対して、0.01質量%以上30質量%以下であることが好ましく、0.02質量%以上20質量%以下であることがより好ましい。 In the present invention, other polymer compounds may be used singly or in combination of two or more.
The composition of the present invention may or may not contain other polymer compounds, but when it does, the content of the other polymer compound is 0 relative to the total solid mass of the composition of the present invention. It is preferably 0.01% by mass or more and 30% by mass or less, and more preferably 0.02% by mass or more and 20% by mass or less.
本発明の樹脂組成物の粘度は、樹脂組成物の固形分濃度により調整できる。塗布膜厚の観点から、1,000mm2/s~12,000mm2/sが好ましく、2,000mm2/s~10,000mm2/sがより好ましく、2,500mm2/s~8,000mm2/sが更に好ましい。上記範囲であれば、均一性の高い塗布膜を得ることが容易になる。1,000mm2/s以上であれば、例えば再配線用絶縁膜として必要とされる膜厚で塗布することが容易であり、12,000mm2/s以下であれば、塗布面状に優れた塗膜が得られる。 <Characteristics of resin composition>
The viscosity of the resin composition of the present invention can be adjusted by adjusting the solid content concentration of the resin composition. From the viewpoint of coating film thickness, it is preferably 1,000 mm 2 /s to 12,000 mm 2 /s, more preferably 2,000 mm 2 /s to 10,000 mm 2 /s, and 2,500 mm 2 /s to 8,000 mm. 2 /s is more preferred. If it is the said range, it will become easy to obtain a coating film with high uniformity. If it is 1,000 mm 2 /s or more , it is easy to apply the film with a film thickness required, for example, as an insulating film for rewiring. A coating is obtained.
本発明の樹脂組成物の含水率は、2.0質量%未満であることが好ましく、1.5質量%未満であることがより好ましく、1.0質量%未満であることが更に好ましい。2.0%未満であれば、樹脂組成物の保存安定性が向上する。
水分の含有量を維持する方法としては、保管条件における湿度の調整、保管時の収容容器の空隙率低減などが挙げられる。 <Restrictions on Substances Contained in Resin Composition>
The water content of the resin composition of the present invention is preferably less than 2.0% by mass, more preferably less than 1.5% by mass, and even more preferably less than 1.0% by mass. If it is less than 2.0%, the storage stability of the resin composition is improved.
Methods for maintaining the moisture content include adjusting the humidity in the storage conditions and reducing the porosity of the storage container during storage.
ハロゲン原子の含有量を調節する方法としては、イオン交換処理などが好ましく挙げられる。 Considering the use as a semiconductor material, the resin composition of the present invention preferably has a halogen atom content of less than 500 ppm by mass, more preferably less than 300 ppm by mass, and less than 200 ppm by mass from the viewpoint of wiring corrosion. is more preferred. Among them, those present in the form of halogen ions are preferably less than 5 ppm by mass, more preferably less than 1 ppm by mass, and even more preferably less than 0.5 ppm by mass. Halogen atoms include chlorine and bromine atoms. It is preferable that the total amount of chlorine atoms and bromine atoms or chlorine ions and bromine ions is within the above ranges.
As a method for adjusting the content of halogen atoms, ion exchange treatment and the like are preferably mentioned.
本発明の樹脂組成物を硬化することにより、この樹脂組成物の硬化物を得ることができる。
本発明の硬化物は、本発明の樹脂組成物を硬化してなる硬化物である。
樹脂組成物の硬化は加熱によるものであることが好ましく、加熱温度が120℃~400℃の範囲内であることがより好ましく、140℃~380℃の範囲内にあることが更に好ましく、170℃~350℃の範囲内にあることが特に好ましい。樹脂組成物の硬化物の形態は、特に限定されず、フィルム状、棒状、球状、ペレット状など、用途に合わせて選択することができる。本発明において、この硬化物は、フィルム状であることが好ましい。また、樹脂組成物のパターン加工によって、壁面への保護膜の形成、導通のためのビアホール形成、インピーダンスや静電容量あるいは内部応力の調整、放熱機能付与など、用途にあわせて、この硬化物の形状を選択することもできる。この硬化物(硬化物からなる膜)の膜厚は、0.5μm以上150μm以下であることが好ましい。
本発明の樹脂組成物を硬化した際の収縮率は、50%以下が好ましく、45%以下がより好ましく、40%以下が更に好ましい。ここで、収縮率は、樹脂組成物の硬化前後の体積変化の百分率を指し、下記の式より算出することができる。
収縮率[%]=100-(硬化後の体積÷硬化前の体積)×100 <Cured product of resin composition>
By curing the resin composition of the present invention, a cured product of this resin composition can be obtained.
The cured product of the present invention is a cured product obtained by curing the resin composition of the present invention.
Curing of the resin composition is preferably by heating, and the heating temperature is more preferably in the range of 120°C to 400°C, more preferably in the range of 140°C to 380°C, and 170°C. It is particularly preferred to be in the range of -350°C. The form of the cured product of the resin composition is not particularly limited, and can be selected from film-like, rod-like, spherical, pellet-like, etc. according to the application. In the present invention, this cured product is preferably in the form of a film. In addition, pattern processing of the resin composition can be used to form protective films on walls, form via holes for conduction, adjust impedance, capacitance or internal stress, and impart heat dissipation functions. You can also choose the shape. The film thickness of the cured product (film made of the cured product) is preferably 0.5 μm or more and 150 μm or less.
The shrinkage ratio when the resin composition of the present invention is cured is preferably 50% or less, more preferably 45% or less, and even more preferably 40% or less. Here, the shrinkage ratio refers to the percentage change in volume of the resin composition before and after curing, and can be calculated from the following formula.
Shrinkage rate [%] = 100 - (volume after curing / volume before curing) x 100
本発明の樹脂組成物の硬化物のイミド化反応率は、70%以上が好ましく、80%以上がより好ましく、90%以上が更に好ましい。70%以上であれば、機械特性に優れた硬化物となる場合がある。
本発明の樹脂組成物の硬化物の破断伸びは、30%以上が好ましく、40%以上がより好ましく、50%以上が更に好ましい。
本発明の樹脂組成物の硬化物のガラス転移温度(Tg)は、180℃以上であることが好ましく、210℃以上であることがより好ましく、230℃以上であることがさらに好ましい。 <Characteristics of Cured Product of Resin Composition>
The imidization reaction rate of the cured product of the resin composition of the present invention is preferably 70% or higher, more preferably 80% or higher, and even more preferably 90% or higher. If it is 70% or more, a cured product having excellent mechanical properties may be obtained.
The elongation at break of the cured product of the resin composition of the present invention is preferably 30% or more, more preferably 40% or more, and even more preferably 50% or more.
The glass transition temperature (Tg) of the cured product of the resin composition of the present invention is preferably 180° C. or higher, more preferably 210° C. or higher, and even more preferably 230° C. or higher.
本発明の接合体の製造方法は、配線端子を備える面を有する基板Aを準備する工程、上記基板Aの上記配線端子を備える面上にポリイミド含有部を形成するポリイミド含有部形成工程、配線端子を備える面を有する基板Bを準備する工程、及び、上記基板Aのポリイミド含有部を有する面と、上記基板Bにおける上記配線端子を備える面とを接合する接合工程、を含み、上記ポリイミド含有部のガラス転移温度が、上記接合工程における接合温度よりも低い温度である。
本発明の接合体の製造方法における基板A、基板B及び各工程の詳細は、上述の本発明のポリイミド含有部形成用組成物が用いられる接合体の製造方法における基板A、基板B及び各工程の詳細と同様であり、好ましい態様も同様である。 (Manufacturing method of joined body)
The manufacturing method of the joined body of the present invention comprises a step of preparing a substrate A having a surface provided with a wiring terminal, a polyimide-containing portion forming step of forming a polyimide-containing portion on the surface of the substrate A provided with the wiring terminal, and a wiring terminal. and a bonding step of bonding the surface of the substrate A having the polyimide-containing portion and the surface of the substrate B having the wiring terminal, wherein the polyimide-containing portion is lower than the bonding temperature in the bonding step.
The details of the substrate A, the substrate B, and each step in the method for producing a joined body of the present invention are as follows: , and preferred embodiments are also the same.
本発明の接合体は、本発明の接合体の製造方法により得られる接合体である。
接合体の好ましい態様は、上述の本発明のポリイミド含有部形成用組成物が用いられる接合体の製造方法における接合体の好ましい態様と同様である。 (Zygotes)
The conjugate of the present invention is a conjugate obtained by the method for producing a conjugate of the present invention.
Preferred aspects of the joined body are the same as the preferred aspects of the joined body in the above-described method for producing a joined body using the composition for forming a polyimide-containing portion of the present invention.
4,4’-オキシジフタル酸二無水物(ODPA)7.76g(25ミリモル)および3,3’,4,4’-ビフェニルテトラカルボン酸二無水物6.23g(25ミリモル)を反応容器に入れ、2-ヒドロキシエチルメタクリレート(HEMA)13.4g及びγ-ブチロラクトン100mLを加えた。室温下で撹拌しながら、ピリジン7.91gを加えることにより、反応混合物を得た。反応による発熱の終了後、室温まで放冷し、更に16時間静置した。
次に、氷冷下において、反応混合物に、ジシクロヘキシルカルボジイミド(DCC)20.6g(99.9ミリモル)をγ-ブチロラクトン30mLに溶解した溶液を、撹拌しながら40分かけて加えた。続いて、4,4’-ジアミノジフェニルエーテル(DADPE)9.3g(46ミリモル)をγ-ブチロラクトン350mLに懸濁した懸濁液を、撹拌しながら60分かけて加えた。
更に室温で2時間撹拌した後、エチルアルコール3mLを加えて1時間撹拌した。その後、γ-ブチロラクトン100mLを加えた。反応混合物に生じた沈殿物を、ろ過により取り除き、反応液を得た。
得られた反応液を3リットルのエチルアルコールに加えて、粗ポリマーからなる沈殿物を生成した。生成した粗ポリマーを濾取し、テトラヒドロフラン200mLに溶解して粗ポリマー溶液を得た。得られた粗ポリマー溶液を3リットルの水に滴下してポリマーを沈殿させ、得られた沈殿物を濾取した後に真空乾燥することにより、粉末状のポリマーP-1を得た。
このポリマーの重量平均分子量(Mw)を測定したところ、23,000であった。
ポリマーP-1は下記構造の樹脂である。括弧の添字は各繰り返し単位のモル比を表す。
7.76 g (25 mmol) of 4,4'-oxydiphthalic dianhydride (ODPA) and 6.23 g (25 mmol) of 3,3',4,4'-biphenyltetracarboxylic dianhydride were placed in a reaction vessel. , 2-hydroxyethyl methacrylate (HEMA) 13.4 g and γ-butyrolactone 100 mL were added. A reaction mixture was obtained by adding 7.91 g of pyridine while stirring at room temperature. After the end of heat generation due to the reaction, the mixture was allowed to cool to room temperature and allowed to stand still for 16 hours.
Next, under ice-cooling, a solution of 20.6 g (99.9 mmol) of dicyclohexylcarbodiimide (DCC) dissolved in 30 mL of γ-butyrolactone was added to the reaction mixture over 40 minutes while stirring. Subsequently, a suspension of 9.3 g (46 mmol) of 4,4′-diaminodiphenyl ether (DADPE) in 350 mL of γ-butyrolactone was added with stirring over 60 minutes.
After further stirring at room temperature for 2 hours, 3 mL of ethyl alcohol was added and the mixture was stirred for 1 hour. Then 100 mL of γ-butyrolactone was added. A precipitate formed in the reaction mixture was removed by filtration to obtain a reaction liquid.
The resulting reaction solution was added to 3 liters of ethyl alcohol to produce a precipitate consisting of crude polymer. The resulting crude polymer was collected by filtration and dissolved in 200 mL of tetrahydrofuran to obtain a crude polymer solution. The resulting crude polymer solution was dropped into 3 liters of water to precipitate the polymer, and the resulting precipitate was collected by filtration and dried in vacuo to obtain a powdery polymer P-1.
The weight average molecular weight (Mw) of this polymer was measured and found to be 23,000.
Polymer P-1 is a resin having the following structure. Subscripts in parentheses represent the molar ratio of each repeating unit.
20.0g(64.5ミリモル)の4,4’-オキシジフタル酸無水物(140℃で12時間乾燥した)と、16.8g(129ミリモル)の2-ヒドロキシエチルメタクリレートと、0.05gのハイドロキノンと、20.4g(258ミリモル)のピリジンと、100gのダイグライムとを混合し、60℃の温度で18時間撹拌して、4,4’-オキシジフタル酸と2-ヒドロキシエチルメタクリレートのジエステルを製造した。次いで、反応混合物を冷却し、16.12g(135.5ミリモル)のSOCl2を2時間かけて加えた。次いで、100mLのN-メチルピロリドンに12.74g(60.0ミリモル)の2,2’-ジメチルビフェニル‐4,4’-ジアミンを溶解させた溶液を、-5~0℃の温度範囲に調整しつつ、2時間かけて反応混合物に滴下した。反応混合物を0℃で1時間反応させたのち、エタノールを70g加えて、室温で1時間撹拌した。次いで、5リットルの水の中でポリイミド前駆体を沈殿させ、水-ポリイミド前駆体混合物を5,000rpmの速度で15分間撹拌した。ポリイミド前駆体をろ過して除き、4リットルの水の中で再度30分間撹拌し再びろ過した。次いで、得られたポリイミド前駆体を減圧下で、2日間乾燥した。このポリイミド前駆体(ポリマーP-2)の重量平均分子量は、29,000であった。
ポリマーP-2は下記構造の樹脂である。
20.0 g (64.5 mmol) of 4,4′-oxydiphthalic anhydride (dried at 140° C. for 12 hours), 16.8 g (129 mmol) of 2-hydroxyethyl methacrylate and 0.05 g of hydroquinone , 20.4 g (258 mmol) of pyridine and 100 g of diglyme were mixed and stirred at a temperature of 60° C. for 18 hours to prepare a diester of 4,4′-oxydiphthalic acid and 2-hydroxyethyl methacrylate. . The reaction mixture was then cooled and 16.12 g (135.5 mmol) of SOCl 2 was added over 2 hours. Then, a solution of 12.74 g (60.0 mmol) of 2,2'-dimethylbiphenyl-4,4'-diamine dissolved in 100 mL of N-methylpyrrolidone was adjusted to a temperature range of -5 to 0°C. was added dropwise to the reaction mixture over 2 hours. After reacting the reaction mixture at 0° C. for 1 hour, 70 g of ethanol was added and stirred at room temperature for 1 hour. The polyimide precursor was then precipitated in 5 liters of water and the water-polyimide precursor mixture was stirred at a speed of 5,000 rpm for 15 minutes. The polyimide precursor was filtered off, stirred again in 4 liters of water for 30 minutes and filtered again. The resulting polyimide precursor was then dried under reduced pressure for two days. The weight average molecular weight of this polyimide precursor (polymer P-2) was 29,000.
Polymer P-2 is a resin having the following structure.
20.0g(64.5ミリモル)の4,4’-オキシジフタル酸無水物(140℃で12時間乾燥した)と、16.8g(129ミリモル)の2-ヒドロキシエチルメタクリレートと、0.05gのハイドロキノンと、20.4g(258ミリモル)のピリジンと、100gのダイグライムとを混合し、60℃の温度で18時間撹拌して、4,4’-オキシジフタル酸と2-ヒドロキシエチルメタクリレートのジエステルを製造した。次いで、得られたジエステルをSOCl2により塩素化した後、合成例2と同様にN-メチルピロリドンに4,4’-ジアミノジフェニルエーテルを溶解させた溶液を、反応混合物に滴下し、その後得た反応混合物を精製、乾燥した。このポリイミド前駆体(ポリマーP-3)の重量平均分子量は、18,000であった。
ポリマーP-3は下記構造の樹脂である。
20.0 g (64.5 mmol) of 4,4′-oxydiphthalic anhydride (dried at 140° C. for 12 hours), 16.8 g (129 mmol) of 2-hydroxyethyl methacrylate and 0.05 g of hydroquinone , 20.4 g (258 mmol) of pyridine and 100 g of diglyme were mixed and stirred at a temperature of 60° C. for 18 hours to prepare a diester of 4,4′-oxydiphthalic acid and 2-hydroxyethyl methacrylate. . Then, after chlorinating the resulting diester with SOCl 2 , a solution of 4,4'-diaminodiphenyl ether dissolved in N-methylpyrrolidone was added dropwise to the reaction mixture in the same manner as in Synthesis Example 2, and then the resulting reaction The mixture was purified and dried. The weight average molecular weight of this polyimide precursor (polymer P-3) was 18,000.
Polymer P-3 is a resin having the following structure.
具体的には、表に記載の成分の含有量は、表に記載の量(質量部)とした。また、表中、「-」の記載は該当する成分を組成物が含有していないことを示している。 Each component was mixed as described in Table 1 to prepare a uniform solution. The resulting solution was pressure filtered at a pressure of 0.4 MPa through a filter with a pore width of 20 μm to obtain a resin composition.
Specifically, the contents of the components described in the table were the amounts (parts by mass) described in the table. In the table, the description of "-" indicates that the composition does not contain the corresponding component.
・P-1~P-3:上記で合成したP-1~P-3 〔resin〕
・ P-1 to P-3: P-1 to P-3 synthesized above
・B-1:テトラエチレングリコールジメタクリレート(Arkema社製)
・B-2:ライトアクリレートDCP―A(共栄社化学製)
・B-3:下記構造の化合物、括弧の添字は繰返し数を表す。
・B-4:NKエステルA-TMMT(新中村化学製) [Polymerizable compound]
· B-1: Tetraethylene glycol dimethacrylate (manufactured by Arkema)
・ B-2: Light acrylate DCP-A (manufactured by Kyoeisha Chemical)
*B-3: A compound having the following structure, the subscript in the parenthesis represents the number of repetitions.
・ B-4: NK Ester A-TMMT (manufactured by Shin-Nakamura Chemical)
・C-1:Irgacure OXE-01(BASF社製)
・C-2:パークミルD(日油社製)
・C-3:下記構造の開始剤
・C-4:Irgacure OXE-02(BASF社製)
・C-5:Irgacure 784(BASF社製) [Initiator]
・ C-1: Irgacure OXE-01 (manufactured by BASF)
・ C-2: Parkmill D (manufactured by NOF Corporation)
· C-3: an initiator having the following structure
・ C-4: Irgacure OXE-02 (manufactured by BASF)
・ C-5: Irgacure 784 (manufactured by BASF)
・D-1:N-[3-(トリエトキシシリル)プロピル]マレインアミド酸 [Metal adhesion improver]
・ D-1: N-[3-(triethoxysilyl)propyl]maleamic acid
・E-1:5-アミノテトラゾール
・E-2:1H-Tetrazole [Migration inhibitor]
・E-1: 5-aminotetrazole ・E-2: 1H-Tetrazole
・A-1:4MeHQ(4-メトキシフェノール)
・A-2:TEMPO(2,2,6,6-テトラメチルピペリジン 1-オキシル) [Polymerization inhibitor]
・ A-1: 4MeHQ (4-methoxyphenol)
・ A-2: TEMPO (2,2,6,6-tetramethylpiperidine 1-oxyl)
・G-1:1-[4-(2-ヒドロキシエチル)-1-ピペリジニル]-3-(2-ヒドロキシフェニル)-1-プロパノン
・G-2:下記化合物
· G-1: 1-[4-(2-hydroxyethyl)-1-piperidinyl]-3-(2-hydroxyphenyl)-1-propanone · G-2: the following compound
・H-1:GBL(γ-ブチロラクトン)
・H-2:EL(乳酸エチル)
・H-3:NMP(N-メチルピロリドン)
・H-4:DMSO(ジメチルスルホキシド) 〔solvent〕
・ H-1: GBL (γ-butyrolactone)
・H-2: EL (ethyl lactate)
・ H-3: NMP (N-methylpyrrolidone)
· H-4: DMSO (dimethyl sulfoxide)
めっきにて以下のサイズ、金属種を持つピラー基板を作製した。
a)ピッチ;25μm、銅ピラー径;10μm、銅ピラー高;10μm
b)ピッチ;45μm、銅/錫ピラー径;20μm、銅/錫ピラー高;2/8μmm、シリコンウエハ、銅、錫がこの順に形成されている。
c)ピッチ;45μm、銅ピラー径;20μm、銅ピラー高;10μm
d)8インチシリコンウエハ上に厚さ5μmのSiO2膜をCVD(chemical vapor deposition)で形成し、フォトリソグラフィおよびドライエッチングによりピッチ45μm、直径20μmのホールパターンを正方配列で形成した。ホールパターンを形成した面に対してチタンおよび銅の薄層をCVDで順に形成した後、めっきによってホールパターン内に銅を充填した。その後、パターン内に銅が充填されたSiO2膜を内部の銅とともに厚さ3μmになるまでCMPによって研磨した。 <Fabrication of substrate>
Pillar substrates having the following sizes and metal types were produced by plating.
a) Pitch: 25 μm, copper pillar diameter: 10 μm, copper pillar height: 10 μm
b) Pitch: 45 µm, copper/tin pillar diameter: 20 µm, copper/tin pillar height: 2/8 µmm, silicon wafer, copper, and tin are formed in this order.
c) Pitch: 45 µm, copper pillar diameter: 20 µm, copper pillar height: 10 µm
d) A SiO2 film with a thickness of 5 μm was formed on an 8-inch silicon wafer by CVD (chemical vapor deposition), and a hole pattern with a pitch of 45 μm and a diameter of 20 μm was formed in a square array by photolithography and dry etching. After thin layers of titanium and copper were sequentially formed by CVD on the surface where the hole pattern was formed, the hole pattern was filled with copper by plating. After that, the SiO 2 film in which the pattern was filled with copper was polished by CMP to a thickness of 3 μm together with the copper inside.
図6(a)は上記a)及びc)の概略断面図である。
図6(a)において、10は基板を、12は銅により形成された配線端子(ピラ-)をそれぞれ表す。
図6(a)中、各ピラーにおけるピラーの直径dの算術平均値がピラー径であり、a)においては10μm、c)においては20μmである。
図6(a)中、各ピラーにおけるピラーの間隔pの算術平均値がピッチであり、a)においては10μm、c)においては20μmである。
図6(a)中、各ピラーにおけるピラーの高さhの算術平均値がピラー高であり、a)においては10μm、c)においては10μmである。
図6(b)は上記b)の概略断面図である。
図6(b)において、10は基板を、12は配線端子を表しており、配線端子12は錫により形成されたピラー(導通路)14、銅により形成されたピラ-(電極)16から形成されている。
図6(b)中、各ピラーにおけるピラーの直径dの算術平均値がピラー径であり、b)においては20μmである。
図6(b)中、各ピラーにおけるピラーの間隔pの算術平均値がピッチであり、b)においては45μmである。
図6(b)中、各ピラーにおける導通路の高さh1の算術平均値が錫ピラー高であり、b)においては8μmである。
図6(b)中、各ピラーにおける電極の高さh2の算術平均値が銅ピラー高であり、b)においては2μmである。 Details of the fabricated pillar substrate will be described below.
FIG. 6(a) is a schematic sectional view of the above a) and c).
In FIG. 6A, 10 denotes a substrate, and 12 denotes wiring terminals (pillars) made of copper.
In FIG. 6(a), the arithmetic mean value of the pillar diameters d in each pillar is the pillar diameter, which is 10 μm in a) and 20 μm in c).
In FIG. 6(a), the arithmetic average value of the pillar spacing p in each pillar is the pitch, which is 10 μm in a) and 20 μm in c).
In FIG. 6(a), the arithmetic mean value of the pillar height h of each pillar is the pillar height, which is 10 μm in a) and 10 μm in c).
FIG. 6(b) is a schematic sectional view of the above b).
In FIG. 6B, 10 denotes a substrate and 12 denotes a wiring terminal. The wiring terminal 12 is formed of a pillar (conducting path) 14 made of tin and a pillar (electrode) 16 made of copper. It is
In FIG. 6(b), the arithmetic mean value of the pillar diameters d in each pillar is the pillar diameter, which is 20 μm in b).
In FIG. 6(b), the arithmetic mean value of the pillar spacing p of each pillar is the pitch, which is 45 μm in b).
In FIG. 6(b), the arithmetic mean value of the height h1 of the conduction path in each pillar is the tin pillar height, and in b) it is 8 μm.
In FIG. 6(b), the arithmetic mean value of the electrode height h2 in each pillar is the copper pillar height, which is 2 μm in b).
後述する表に記載された各組成物をa)、b)、c)の各基板に、15μm膜厚となるよう塗布し、100℃で5分間ベークした。さらに表の「成膜温度」、「成膜時間」の欄に記載の温度、時間の条件で追加ベークし、ポリイミド含有部を得た。その後DISCO製Surface planer DAS8920を用いて表面を残膜5μmになるようカッティングすることによりポリイミド含有部の表面の平坦化を行なった。平坦化を行った基板は各2枚(表の基板A、基板B)作製し、表に記載した組み合わせで、EVG社製ボンダー540で基板同士の接合を実施した。表の「接合」の欄に基板・基板と表に記載された例においては、基板同士を接合させた。基板・チップと記載された例においては、基板のうち一方をダイシングして作製した10mm四方のチップを用意して、上記チップと基板とを接着させた。接合温度は表の「接合温度」の欄に記載の温度とし、表に記載の「接合温度」、「接合時間」、「加圧力」、雰囲気圧:1×10-3mbarの条件で接合を実施し、基板積層体(接合体)を得た。1mbarは100Paである。また、1Nは0.102kgである。 <Fabrication of substrate/substrate laminate (bonded body) (Examples 1 to 14, 16, 19)>
Each of the compositions shown in the table below was applied to each of the substrates a), b), and c) so as to have a film thickness of 15 μm, and baked at 100° C. for 5 minutes. Furthermore, additional baking was performed under the conditions of temperature and time described in the columns of "film formation temperature" and "film formation time" in the table to obtain a polyimide-containing portion. Thereafter, the surface of the polyimide-containing portion was flattened by cutting the surface using a surface planer DAS8920 manufactured by DISCO so that the remaining film was 5 μm. Two flattened substrates (substrate A and substrate B in the table) were prepared, and the substrates were bonded together by a bonder 540 manufactured by EVG in the combination shown in the table. In the examples described in the table as "substrate/substrate" in the "bonding" column, the substrates were bonded together. In the example described as "substrate/chip", a 10 mm square chip was prepared by dicing one of the substrates, and the chip and the substrate were bonded together. The bonding temperature is the temperature described in the "bonding temperature" column of the table, and bonding is performed under the conditions of "bonding temperature", "bonding time", "pressure", and atmospheric pressure: 1 × 10 -3 mbar described in the table. A substrate laminate (bonded body) was obtained. 1 mbar is 100 Pa. 1N is 0.102 kg.
実施例15では、平坦化を行った基板を各2枚(表の基板A及び基板B)作製した後に、基板Bのみを組成物塗布面にRAD3510F/12 (LINTEC社製)にて表面に保護テープを貼り付けた。その後、基板Bに対してDFG8560(DISCO社製)を用い、裏面(組成物塗布面とは反対の側の面)研磨を行い、ウェハ厚みを150μmまで膜化後に、EVG社製ボンダー540で基板同士の接合を実施した以外は、実施例1と同様に評価を実施した。 <Production of substrate/substrate laminate (bonded body) (Example 15)>
In Example 15, after preparing two flattened substrates (substrate A and substrate B in the table), only the substrate B was coated with the composition on the surface with RAD3510F/12 (manufactured by LINTEC). Affixed the tape. After that, using DFG8560 (manufactured by DISCO), the back surface (the surface opposite to the composition coated surface) was polished to the substrate B, and after forming the wafer to a thickness of 150 μm, the substrate was bonded with a bonder 540 manufactured by EVG. Evaluation was carried out in the same manner as in Example 1, except that they were joined together.
実施例17では、基板Bに組成物4を用い、さらに10μm膜厚となるよう塗布した以外は実施例1と同様に基板作製及び評価を実施した。 <Production of substrate/substrate laminate (bonded body) (Example 17)>
In Example 17, substrate preparation and evaluation were carried out in the same manner as in Example 1, except that composition 4 was used for substrate B and was applied to a film thickness of 10 μm.
実施例18では、基板Bとして基板d)を用いた以外は、実施例1と同様に基板作製及び評価を実施した。 <Production of substrate/substrate laminate (bonded body) (Example 18)>
In Example 18, substrate preparation and evaluation were carried out in the same manner as in Example 1, except that the substrate d) was used as the substrate B.
実施例20では、基板Bを70℃で予熱してから、70℃のまま接合を開始した以外は実施例2と同様に基板作製及び評価を実施した。 <Production of substrate/substrate laminate (bonded body) (Example 20)>
In Example 20, substrate preparation and evaluation were carried out in the same manner as in Example 2, except that the substrate B was preheated at 70°C and then bonding was started at 70°C.
得られた各基板積層体をダイシング機を用い7mm×7mmのサイズにカットし、XYZTEC社製condor Sigmaダイテスターを用いて、シェアツールを用いて7mm×7mmのサイズの最大剥離抗力(kg/cm2)を計測した。1水準につき5つの試験片を作製し、各5回の計測を行い、その算術平均値を採用した。最大剥離抗力は下記の3段階で評価した。評価結果は、表の「最大剥離抗力」の欄に記載した。最大剥離抗力が大きいほど、接合体は接着性に優れているといえる。
A:最大剥離抗力が50kg/cm2以上であった。
B:最大剥離抗力が50kg/cm2未満、40kg/cm2以上であった。
C:最大剥離抗力が40kg/cm2未満、30kg/cm2以上であった。
D:最大剥離抗力が30kg/cm2未満であった。 <Evaluation of maximum peeling force>
Each obtained substrate laminate is cut into a size of 7 mm × 7 mm using a dicing machine, and a shear tool is used to measure the maximum peel resistance (kg / cm 2 ) was measured. Five test pieces were prepared for each level, five measurements were made, and the arithmetic mean value was adopted. The maximum peel resistance was evaluated in the following three stages. The evaluation results are shown in the "maximum peel resistance" column of the table. It can be said that the larger the maximum peel resistance, the more excellent the adhesiveness of the joined body.
A: Maximum peel resistance was 50 kg/cm 2 or more.
B: The maximum peel resistance was less than 50 kg/cm 2 and 40 kg/cm 2 or more.
C: The maximum peel resistance was less than 40 kg/cm 2 and 30 kg/cm 2 or more.
D: Maximum peel resistance was less than 30 kg/cm 2 .
各基板積層体におけるポリイミド含有部を回収し、ポリイミド含有部のガラス転移温度(Tg)をUBM社製 Rheogel E4000を用いて測定した。測定結果は、表の「ガラス転移温度」の欄に記載した。 <Measurement of glass transition temperature>
The polyimide-containing portion in each substrate laminate was recovered, and the glass transition temperature (Tg) of the polyimide-containing portion was measured using Rheogel E4000 manufactured by UBM. The measurement results are shown in the "Glass transition temperature" column of the table.
ポリイミド含有部のガラス転移温度が接合温度よりも高い比較例1及び比較例2においては、最大剥離抗力が小さいことがわかる。 As is clear from the results in the table above, the use of the composition for forming a polyimide-containing portion of the present invention yielded a joined body having a high maximum peel resistance.
It can be seen that the maximum peel resistance is small in Comparative Examples 1 and 2, in which the glass transition temperature of the polyimide-containing portion is higher than the bonding temperature.
1x シリコンウエハ
1y ポリイミド含有部配設基板
1z 積層体
2 基板B(マザーチップ)
2a 基板Bにおける第2のポリイミド含有部の表面
2x シリコンウエハ
2y スルーホール電極
31 電極(金属部)
31a 電極の先端
32 電極(金属部)
4 樹脂組成物層
4a ポリイミド含有部の表面(平坦化前)
4b ポリイミド含有部の表面(平坦化後)
41 ポリイミド含有部
42 第2のポリイミド含有部
8 電子回路領域
10 基板
12 配線端子A
14 導通路
16 電極
81 電子回路
90 半導体デバイス
91 ボンディングフィルム
93 はんだ電極(バンプ)
94 アンダーフィル
95 封止樹脂
96 ワイヤボンディング
97a 基板電極
97b ワイヤボンディングパッド
98 ベース基板
99 はんだボール
100 接合体
101a~101d 半導体素子
101 接合体
102b~102d 貫通電極
103a~103e 金属バンプ
105 再配線層
110、110a、110b 樹脂層
115 絶縁層
120 配線基板
120a 表面電極
200 半導体デバイス
d ピラーの直径
p ピラーの間隔
h ピラーの高さ
h1 導通路の高さ
h2 電極の高さ 1 Substrate A (underlying substrate, daughter chip)
1x silicon wafer 1y substrate provided with polyimide containing portion 1z laminate 2 substrate B (mother chip)
2a surface of the second polyimide-containing portion of substrate B 2x silicon wafer 2y through-hole electrode 31 electrode (metal portion)
31a electrode tip 32 electrode (metal part)
4 Resin composition layer 4a Surface of polyimide-containing portion (before flattening)
4b Surface of polyimide-containing part (after flattening)
41 polyimide-containing portion 42 second polyimide-containing portion 8 electronic circuit region 10 substrate 12 wiring terminal A
14 conductive path 16 electrode 81 electronic circuit 90 semiconductor device 91 bonding film 93 solder electrode (bump)
94 underfill 95 sealing resin 96 wire bonding 97a substrate electrode 97b wire bonding pad 98 base substrate 99 solder ball 100 bonded body 101a to 101d semiconductor element 101 bonded body 102b to 102d through electrode 103a to 103e metal bump 105 rewiring layer 110, 110a, 110b resin layer 115 insulating layer 120 wiring substrate 120a surface electrode 200 semiconductor device d pillar diameter p pillar spacing h pillar height h1 conduction path height h2 electrode height
Claims (22)
- 配線端子を備える面を有する基板Aを準備する工程、
前記基板Aの前記配線端子を備える面上にポリイミド含有部を形成するポリイミド含有部形成工程、
配線端子を備える面を有する基板Bを準備する工程、及び、
前記基板Aのポリイミド含有部を有する面と、前記基板Bにおける前記配線端子を備える面とを接合する接合工程、を含む接合体の製造方法において使用されるポリイミド含有部形成用組成物であって、
前記ポリイミド含有部は前記ポリイミド含有部形成用組成物から形成される部材であり、
前記ポリイミド含有部のガラス転移温度が、前記接合工程における接合温度より低い
ポリイミド含有部形成用組成物。 A step of preparing a substrate A having a surface provided with wiring terminals;
a polyimide-containing portion forming step of forming a polyimide-containing portion on the surface of the substrate A provided with the wiring terminals;
A step of preparing a substrate B having a surface provided with wiring terminals;
A composition for forming a polyimide-containing portion used in a method for producing a bonded body, which includes a bonding step of bonding the surface of the substrate A having the polyimide-containing portion and the surface of the substrate B having the wiring terminal, ,
The polyimide-containing portion is a member formed from the polyimide-containing portion-forming composition,
A composition for forming a polyimide-containing portion, wherein the glass transition temperature of the polyimide-containing portion is lower than the bonding temperature in the bonding step. - ポリイミド前駆体及び溶剤を含む、請求項1に記載のポリイミド含有部形成用組成物。 The composition for forming a polyimide-containing part according to claim 1, comprising a polyimide precursor and a solvent.
- マイグレーション抑制剤を更に含む、請求項1又は2に記載のポリイミド含有部形成用組成物。 The composition for forming a polyimide-containing part according to claim 1 or 2, further comprising a migration inhibitor.
- 前記ポリイミド含有部のガラス転移温度が350℃以下である、請求項1~3のいずれか1項に記載のポリイミド含有部形成用組成物。 4. The composition for forming a polyimide-containing portion according to claim 1, wherein the polyimide-containing portion has a glass transition temperature of 350° C. or lower.
- 前記ポリイミド含有部のガラス転移温度が、前記接合工程における接合温度より30℃以上低い、請求項1~4のいずれか1項に記載のポリイミド含有部形成用組成物。 The composition for forming a polyimide-containing portion according to any one of claims 1 to 4, wherein the polyimide-containing portion has a glass transition temperature lower than the bonding temperature in the bonding step by 30°C or more.
- 前記接合工程における接合温度が380℃以下である、請求項1~5のいずれか1項に記載のポリイミド含有部形成用組成物。 The composition for forming a polyimide-containing portion according to any one of claims 1 to 5, wherein the bonding temperature in the bonding step is 380°C or less.
- 前記基板Aの形態がウエハである、請求項1~6のいずれか1項に記載のポリイミド含有部形成用組成物。 The composition for forming a polyimide-containing portion according to any one of claims 1 to 6, wherein the substrate A is in the form of a wafer.
- 前記基板Bの形態がチップである、請求項1~7のいずれか1項に記載のポリイミド含有部形成用組成物。 The composition for forming a polyimide-containing part according to any one of claims 1 to 7, wherein the form of the substrate B is a chip.
- 前記基板Bの形態がウエハである、請求項1~7のいずれか1項に記載のポリイミド含有部形成用組成物。 The composition for forming a polyimide-containing part according to any one of claims 1 to 7, wherein the form of the substrate B is a wafer.
- 接合工程において、ポリイミド含有部を備えた基板Aの温度が70℃以上に予熱されている、請求項1~9のいずれか1項に記載のポリイミド含有部形成用組成物。 The composition for forming a polyimide-containing portion according to any one of claims 1 to 9, wherein the temperature of the substrate A having the polyimide-containing portion is preheated to 70°C or higher in the bonding step.
- 前記ポリイミド含有部形成工程と、前記接合工程との間に、基板Aのポリイミド含有部の表面を平坦化する平坦化工程を含む、請求項1~10のいずれか1項に記載のポリイミド含有部形成用組成物。 The polyimide-containing portion according to any one of claims 1 to 10, comprising a planarization step of planarizing the surface of the polyimide-containing portion of the substrate A between the polyimide-containing portion forming step and the bonding step. Forming composition.
- 前記平坦化工程が、物理研磨によって行なわれる、請求項11に記載のポリイミド含有部形成用組成物。 The composition for forming a polyimide-containing portion according to claim 11, wherein the planarization step is performed by physical polishing.
- 前記平坦化工程が、化学研磨によって行なわれる、請求項11に記載のポリイミド含有部形成用組成物。 The composition for forming a polyimide-containing portion according to claim 11, wherein the planarization step is performed by chemical polishing.
- 前記接合工程において、前記基板Aのポリイミド含有部を有する面に含まれる電極と、前記基板Bにおける前記配線端子を備える面における電極とが直接接するように接合される、請求項1~13のいずれか1項に記載のポリイミド含有部形成用組成物。 14. Any one of claims 1 to 13, wherein in the bonding step, the electrodes included in the surface of the substrate A having the polyimide-containing portion and the electrodes on the surface of the substrate B including the wiring terminals are in direct contact with each other. 2. The composition for forming a polyimide-containing portion according to claim 1.
- 前記接合工程の前に、前記基板Bの前記配線端子を備える面上に第2のポリイミド含有部を形成する第2のポリイミド含有部形成工程を更に含む、請求項1~14のいずれか1項に記載のポリイミド含有部形成用組成物。 Any one of claims 1 to 14, further comprising a second polyimide-containing portion forming step of forming a second polyimide-containing portion on the surface of the substrate B provided with the wiring terminal before the bonding step. 3. The composition for forming a polyimide-containing portion according to .
- 感光性化合物を更に含む、請求項1~15のいずれか1項に記載のポリイミド含有部形成用組成物。 The composition for forming a polyimide-containing portion according to any one of claims 1 to 15, further comprising a photosensitive compound.
- 前記ポリイミド含有部形成工程が、基板Aの前記配線端子を備える面上にポリイミド含有部形成用組成物を適用し、加熱することを含む、請求項1~16のいずれか1項に記載のポリイミド含有部形成用組成物。 The polyimide-containing part forming step comprises applying a polyimide-containing part-forming composition on the surface of the substrate A provided with the wiring terminal and heating, The polyimide according to any one of claims 1 to 16. A composition for forming a containing portion.
- 前記加熱における加熱温度が、375℃以下である、請求項17に記載のポリイミド含有部形成用組成物。 The composition for forming a polyimide-containing part according to claim 17, wherein the heating temperature in the heating is 375°C or less.
- 配線端子を備える面を有する基板Aを準備する工程、
前記基板Aの前記配線端子を備える面上にポリイミド含有部を形成するポリイミド含有部形成工程、
配線端子を備える面を有する基板Bを準備する工程、及び、
前記基板Aのポリイミド含有部を有する面と、前記基板Bにおける前記配線端子を備える面とを接合する接合工程、を含み、
前記ポリイミド含有部のガラス転移温度が、前記接合工程における接合温度よりも低い温度である接合体の製造方法。 A step of preparing a substrate A having a surface provided with wiring terminals;
a polyimide-containing portion forming step of forming a polyimide-containing portion on the surface of the substrate A provided with the wiring terminals;
A step of preparing a substrate B having a surface provided with wiring terminals;
A joining step of joining the surface of the substrate A having the polyimide-containing portion and the surface of the substrate B having the wiring terminal,
A method for producing a joined body, wherein the glass transition temperature of the polyimide-containing portion is lower than the joining temperature in the joining step. - 請求項19に記載の製造方法によって得られる接合体。 A joined body obtained by the manufacturing method according to claim 19.
- 請求項19に記載の接合体の製造方法を含む、デバイスの製造方法。 A method for manufacturing a device, including the method for manufacturing a joined body according to claim 19.
- 請求項20に記載の接合体を含む、デバイス。 A device comprising the conjugate according to claim 20.
Priority Applications (3)
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JP2023522647A JPWO2022244717A1 (en) | 2021-05-17 | 2022-05-16 | |
KR1020237039473A KR20230171470A (en) | 2021-05-17 | 2022-05-16 | Composition for forming a polyimide-containing portion, method for producing a bonded body, a bonded body, a method for producing a device, and a device |
CN202280035809.0A CN117378044A (en) | 2021-05-17 | 2022-05-16 | Polyimide-containing part forming composition, method for producing bonded body, method for producing device, and device |
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JP (1) | JPWO2022244717A1 (en) |
KR (1) | KR20230171470A (en) |
CN (1) | CN117378044A (en) |
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WO (1) | WO2022244717A1 (en) |
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Publication number | Priority date | Publication date | Assignee | Title |
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JP2002299505A (en) * | 2001-03-29 | 2002-10-11 | Nippon Steel Chem Co Ltd | Manufacturing method of semiconductor element |
WO2012005079A1 (en) * | 2010-07-09 | 2012-01-12 | 東レ株式会社 | Photosensitive adhesive composition, photosensitive adhesive film, and semiconductor device using each |
WO2017209176A1 (en) * | 2016-06-02 | 2017-12-07 | 富士フイルム株式会社 | Laminate production method, semiconductor element production method, and laminate |
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- 2022-05-16 WO PCT/JP2022/020338 patent/WO2022244717A1/en active Application Filing
- 2022-05-16 KR KR1020237039473A patent/KR20230171470A/en unknown
- 2022-05-16 CN CN202280035809.0A patent/CN117378044A/en active Pending
- 2022-05-16 JP JP2023522647A patent/JPWO2022244717A1/ja active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002299505A (en) * | 2001-03-29 | 2002-10-11 | Nippon Steel Chem Co Ltd | Manufacturing method of semiconductor element |
WO2012005079A1 (en) * | 2010-07-09 | 2012-01-12 | 東レ株式会社 | Photosensitive adhesive composition, photosensitive adhesive film, and semiconductor device using each |
WO2017209176A1 (en) * | 2016-06-02 | 2017-12-07 | 富士フイルム株式会社 | Laminate production method, semiconductor element production method, and laminate |
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TW202307090A (en) | 2023-02-16 |
CN117378044A (en) | 2024-01-09 |
JPWO2022244717A1 (en) | 2022-11-24 |
KR20230171470A (en) | 2023-12-20 |
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