WO2022243294A1

WO2022243294A1 - Semiconductor laser device and optoelectronic component

Info

Publication number: WO2022243294A1
Application number: PCT/EP2022/063292
Authority: WO
Inventors: Johann Ramchen; Joerg Erich Sorg
Original assignee: Osram Opto Semiconductors Gmbh
Priority date: 2021-05-19
Filing date: 2022-05-17
Publication date: 2022-11-24
Also published as: CN117321865A; DE102021113021A1

Abstract

The invention relates to a semiconductor laser device (10) comprising a surface emitting semiconductor laser element (105) having a GaN-containing compound semiconductor layer and a converter (120). The converter is adapted to convert a wavelength of laser radiation (107) emitted from the surface emitting semiconductor laser element (105).

Description

SEMICONDUCTOR LASER DEVICE AND OPTOELECTRONIC COMPONENT

DESCRIPTION

Surface emitting semiconductor lasers are widely used as very high luminance light sources. Efforts are generally being made to further develop surface-emitting semiconductor lasers based on GaN.

The object of the present invention is to provide an improved semiconductor laser device and an improved optoelectronic component.

According to embodiments, the object is solved by the subject matter of the independent patent claims. Advantageous developments are defined in the dependent claims.

A semiconductor laser device includes a surface emitting semiconductor laser element having a GaN-containing compound semiconductor layer, and a converter capable of converting a wavelength of laser radiation emitted from the surface emitting semiconductor laser element.

The semiconductor laser device can also have a carrier, the converter being applied to the carrier and the laser radiation being radiated through the carrier and converter. For example, the carrier can be an optical element. For example, the converter can be applied directly to the optical element.

In accordance with further embodiments, the semiconductor laser device can additionally have an optical element on a surface facing away from the surface-emitting semiconductor laser element side of the converter. For example, the optical element can be connected to the carrier.

The semiconductor laser device may further comprise a housing having a bottom part and side parts, wherein the surface emitting semiconductor laser element is arranged above the bottom part and the side parts are arranged laterally adjacent to the surface emitting semiconductor laser element. For example, the side parts can protrude beyond the surface-emitting semiconductor laser element.

According to embodiments, the carrier for the converter can form a closure of the housing. According to further embodiments, the optical element can form a closure of the housing.

According to further embodiments, a semiconductor laser device comprises an arrangement of a multiplicity of surface-emitting semiconductor laser elements which have a GaN-containing compound semiconductor layer, and a converter which is suitable for converting a wavelength of the laser radiation emitted by the surface-emitting semiconductor laser elements.

For example, a single converter can be assigned to the multiplicity of surface-emitting semiconductor laser elements. For example, the converter can change spatially.

In accordance with further embodiments, the converter can have a multiplicity of converter regions, and an associated converter region is assigned to each of the multiplicity of surface-emitting semiconductor laser elements. The semiconductor laser device can also include control electronics that are suitable for driving each of the plurality of surface-emitting semiconductor laser elements individually.

The semiconductor laser device may further comprise an optical device on a side of the converter opposite to the array of semiconductor laser elements. The optical device can have a large number of optical elements. Each of the plurality of surface-emitting semiconductor laser elements can be associated with an associated optical element.

For example, the converter can be applied directly to the surface-emitting semiconductor laser element.

According to further embodiments, the semiconductor laser device can further have a bottom part of a housing or a packaging substrate on which the surface-emitting semiconductor laser element is applied, and an optical element which, together with the bottom part, forms the housing of the semiconductor laser device.

An optoelectronic component includes the semiconductor device described above. For example, the optoelectronic component can be selected from a micro-display device, a lighting device and a motor vehicle headlight.

The accompanying drawings serve to understand exemplary embodiments from the invention. The drawings illustrate exemplary embodiments and, together with the description, serve to explain them. Further exemplary embodiments and numerous of the intended advantages result directly bar from the following detailed description. The elements and structures shown in the drawings are not necessarily drawn to scale with respect to one another. The same reference numbers refer to the same or corresponding elements and structures.

1A shows a schematic cross-sectional view of a semiconductor laser device according to embodiments.

Fig. 1B shows a horizontal cross-sectional view through part of the semiconductor laser device.

Fig. IC shows a schematic cross-sectional view of a surface emitting semiconductor laser element.

2 shows a schematic cross-sectional view of a semiconductor laser device according to embodiments.

Fig. 3A shows a schematic view of part of a workpiece for forming semiconductor laser devices.

3B shows an example of a semiconductor laser device.

FIG. 3C shows a schematic plan view of elements of the semiconductor laser device.

4A shows a schematic cross-sectional view of a semiconductor laser device according to embodiments.

4B and 4C illustrate an example of a wiring scheme for the semiconductor laser device.

4D shows a schematic cross-sectional view of a semiconductor laser device according to further embodiments. Fig. 5A shows a cross-sectional view of a workpiece for forming semiconductor laser devices.

Fig. 5B shows a cross-sectional view of a workpiece for forming semiconductor laser devices.

6 shows a schematic view of an optoelectronic component according to embodiments.

In the following detailed description, reference is made to the accompanying drawings which form a part hereof, and in which specific example embodiments are shown by way of illustration. In this context, directional terminology such as "top", "bottom", "front", "back", "over", "on", "in front", "back", "front", "back", etc. is used the orientation of the figures just described. Because the components of the exemplary embodiments can be positioned in different orientations, the directional terminology is used for purposes of explanation and is in no way limiting.

The description of the exemplary embodiments is not restrictive, since other exemplary embodiments exist and structural or logical changes can be made without departing from the scope defined by the claims. In particular, elements of exemplary embodiments described below can be combined with elements of other exemplary embodiments described, unless the context dictates otherwise.

The terms "wafer" or "semiconductor substrate" used in the following description can, in principle, include any semiconductor-based structure that has a has semiconductor surface. The wafer and structure are understood to include doped and undoped semiconductors, epitaxial semiconductor layers optionally supported by a base substrate, and other semiconductor structures. For example, a layer of a first semiconductor material may be grown on a growth substrate of a second semiconductor material, such as a GaAs substrate, a GaN substrate or a Si substrate, or of an insulating material, such as a sapphire substrate.

Depending on the intended use, the semiconductor can be based on a direct or an indirect semiconductor material. Examples of semiconductor materials that are particularly suitable for generating electromagnetic radiation include, in particular, nitride semiconductor compounds that can be used, for example, to generate ultraviolet, blue or longer-wave light, such as GaN, InGaN, AlN, AlGaN, AlGaInN, AlGaInBN, phosphide semiconductor compounds , which can be used to generate green or longer-wave light, such as GaAsP, AlGaInP, GaP, AlGaP, and other semiconductor materials such as GaAs, AlGaAs, InGaAs, AlInGaAs, SiC, ZnSe, ZnO, Ga _2Ü3 , diamond, hexagonal BN and combinations of the materials mentioned. The stoichiometric ratio of the compound semiconductor materials can vary. Other examples of semiconductor materials may include silicon, silicon-germanium, and germanium.

The term "substrate" generally includes insulating, conductive, or semiconductor substrates.

The term "vertical" as used in this specification is intended to describe an orientation that is substantially perpendicular to the first surface of a substrate or Semiconductor body runs. The vertical direction can correspond to a growth direction when layers are grown, for example.

The terms "lateral" and "horizontal" as used in this specification are intended to describe an orientation or alignment that is substantially parallel to a first surface of a substrate or semiconductor body. This can be the surface of a wafer or a chip (die), for example.

The horizontal direction can, for example, lie in a plane perpendicular to a growth direction when layers are grown.

Typically, the wavelength of electromagnetic radiation emitted from a semiconductor laser element can be converted using a converter material containing a phosphor or phosphor. For example, white light can be generated by combining a semiconductor laser element that emits blue light with a suitable phosphor. For example, the phosphor may be a yellow phosphor capable of emitting yellow light when excited by the light from the blue semiconductor laser element. The phosphor can, for example, absorb part of the electromagnetic radiation emitted by the semiconductor laser element. The combination of blue and yellow light is perceived as white light. The color temperature can be changed by adding further phosphors that are suitable for emitting light of a further wavelength, for example a red wavelength. According to further concepts, white light can be generated by a combination containing a blue-emitting semiconductor laser element and a green and red phosphor. the. It goes without saying that a converter material can comprise a number of different phosphors, each of which emits different wavelengths.

Examples of phosphors are metal oxides, metal halides, metal sulfides, metal nitrides, and others. These compounds can also contain additives that cause specific wavelengths to be emitted. For example, the additives can include rare earth materials. YAG:Ce ³⁺ (yttrium aluminum garnet (Y ₃ Al ₅ O _{12) activated with cerium)} or (Sri. ₇ Bao. ₂ Euo.i)S1O ₄ can be used as an example for a yellow phosphor. Further phosphors can be based on MSiC> ₄ :Eu ²⁺ , where M can be Ca, Sr or Ba. By selecting the cations with an appropriate concentration, a desired conversion wavelength can be selected. Many other examples of suitable phosphors are known.

According to applications, the phosphor material, for example a phosphor powder, can be embedded in a suitable matrix material. For example, the matrix material may comprise a resin or polymer composition such as a silicone or an epoxy resin. The size of the phosphor particles can be in the micrometer or nanometer range, for example.

According to further embodiments, the matrix material can include a glass. For example, the converter material can be formed by sintering the glass, for example S1O ₂ with other additives and phosphor powder, with the formation of a phosphor in the glass (PiG).

According to further embodiments, the phosphor material itself can be sintered to form a ceramic. At- for example, as a result of the sintering process, the ceramic phosphor can have a polycrystalline structure.

According to further embodiments, the phosphor material can be grown to form a monocrystalline phosphor, for example using the Czochralski (Cz) method.

According to further embodiments, the phosphor material itself can be a semiconductor material which has a suitable band gap for absorption of the light emitted by the semiconductor laser element and for emission of the desired conversion wavelength in the volume or in layers. In particular, this can be an epitaxially grown semiconductor material. For example, the epitaxially grown semiconductor material can have a band gap that corresponds to a lower energy than that of the primarily emitted light. Furthermore, several suitable semiconductor layers, each emitting light of different wavelengths, can be stacked one on top of the other. One or more quantum wells, quantum dots, or quantum wires may be formed in the semiconductor material.

1A shows a schematic cross-sectional view of a semiconductor laser device 10 according to embodiments. A semiconductor laser device 10 comprises a surface-emitting semiconductor laser element 105, which has a GaN-containing compound semiconductor layer, and a converter 120. The converter 120 is suitable for converting a wavelength of the laser radiation 107 emitted by the surface-emitting semiconductor laser element 105.

As shown in FIG. 1A, a plurality of semiconductor laser elements 105 can be stacked over a laser substrate 100. Brought or in the laser substrate 100 may be arranged. For example, the laser substrate 100 may be a growth substrate on which individual layers to form the semiconductor laser elements 105 are grown. According to further embodiments, however, the laser substrate 100 can also be different from the growth substrate. For example, the semiconductor laser elements 105 may have been formed on a separate growth substrate and subsequently applied to the laser substrate 100 . According to further embodiments, the term “laser substrate 100” can also refer to a semiconductor body in which the individual semiconductor laser elements 105 are formed.

The semiconductor laser device 10 may further include a housing 130 . For example, the housing 130 can have a bottom part 131 and one or more side parts 135 . The laser substrate 100 can be applied over the bottom part 131 . The bottom part 131 and the housing 130 can be made of a suitable semiconductor package material, such as a ceramic or a suitable plastic, for example.

For example, a conductive layer or parts of a conductive layer can be applied to the bottom part 131 and connected to the laser substrate 100 . The conductive layer or the parts of the conductive layer can represent a first contact element 127 for contacting the semiconductor laser elements 105, for example. For example, the first contact element 127 can be connected to a first contact surface 139 which is located on a side of the base part 131 which is remote from the first contact element 127 . A second contact surface 137 can be isolated from the first contact surface 139 and also present on a side of the base part 131 facing away from the first contact element 127 and be electrically connected to a second contact element 126 . The second contact element 126 can, for example, be another part of the conductive layer which is separate from the first contact element 127 . The second contact element 126 may not be covered with the laser substrate 100, for example. The second contact element 126 can, for example, be connected to a second semiconductor layer of the surface-emitting semiconductor laser element 105 via a first wiring 122 . According to embodiments, individual surface-emitting semiconductor laser elements 105 can be controlled individually in order to implement any desired illumination pattern.

Examples of the construction of surface-emitting semiconductor laser elements will be described in more detail below with reference to FIG. IC.

As shown in Fig. 1A, for example, the side walls 135 of the housing can extend laterally along the laser substrate 100 in a vertical direction, so that the laser substrate 100 with the surface-emitting laser elements 105 rests on the base part 131 and laterally from the side walls 135 is enclosed.

The converter 120 can be applied to a carrier 125, for example. For example, the laser radiation 107 can be radiated through the carrier 125 and the converter 120 . For example, the converter 120 can be applied to the side of the carrier 125 facing the surface-emitting laser element 105 . The carrier 125 can form an upper end of the housing 130, for example.

In this way, the carrier 125, the side parts 135 and the bottom part 131 form a housing, and the converter 120 is mounted on the underside of the housing cover. sample For example, the substrate 125 can be a glass or other transparent material with an anti-reflection coating. The converter 120 can be arranged on a top side, a bottom side or inside the carrier 125 .

As illustrated in FIG. 1A , an optical element 113 or optical device 115 may be applied over the carrier 125 . For example, both carrier 125 and optical element 113 or optical device 115 can have a planar main surface, so that a compact form is realized by the combination of carrier 125, converter 120 and optical element 113 or optical device 115 . In all of the described embodiments, the optical element 113 may be, for example, a lens, such as a collimator lens, or an optically diffractive element, such as a grating element, or other. According to embodiments, a single optical element 113 can be provided for several or all surface-emitting semiconductor laser elements 105 .

An optical device 115 can have a large number of individual optical elements 113, for example. The optical device 115 can be, for example, a lens arrangement or the like. According to embodiments, an associated optical element 113 can be provided for each surface-emitting semiconductor laser element 105 . By addressing the respective semiconductor laser elements 105, which are assigned to a specific optical element 113, an application-specific beam shape can thus be generated.

The surface-emitting semiconductor laser element 105 has a GaN-containing compound layer. For example, the surface-emitting semiconductor laser element 105 may be able to emit laser radiation in a wavelength range of 400 to emit up to 470 nm. Accordingly, using a suitable converter 120, it is possible to achieve emission in a broad visible wavelength range. Due to the fact that the electromagnetic radiation is generated by surface-emitting semiconductor laser elements, a light source that is as compact as possible with the highest possible luminance can be provided. In particular, strongly directed emission is ensured by the individual surface-emitting semiconductor laser elements 105 . As a result, laser beams emitted from adjacent surface-emitting semiconductor laser elements 105 overlap only slightly, as indicated in Fig. 1A. In Fig. 1A, the converter 120 is arranged at a distance from the emission surface 103 of the surface emitting semiconductor laser elements. For example, the distance d can be 500 nm to 100 gm, for example 1 to 100 gm.

Fig. 1B shows an example of an arrangement of the surface emitting semiconductor laser elements 105 over the laser substrate 100. For example, the view of Fig. 1B may be a horizontal cross-sectional view between I and I' in Fig. 1A. Any arrangement pattern can be implemented here. For example, a chessboard pattern-like arrangement of the surface-emitting semiconductor laser elements 105 is shown in FIG. 1B. According to further embodiments, the surface-emitting semiconductor laser elements can also be arranged in rows and columns.

Fig. IC shows an example of a surface emitting laser element 105, which may be part of the semiconductor laser device 10 described. The surface emitting laser element 105 has a first resonator mirror 141, a second resonator mirror 140 and an optical resonator 159 between the first resonator mirror 141 and the second Resonator mirror 140 on. The optical resonator 159 extends in the vertical direction. The first cavity mirror 141 may comprise alternately stacked first layers of a first composition and second layers of a second composition. For example, when using the electrical layers, they can alternately have a high refractive index (n>1.7) and a low refractive index (n<1.7) and be designed as a Bragg reflector. According to further embodiments, the first resonator mirror 141 can also have semiconductor layers. In this case, semiconductor layers with a high refractive index (n>3.3) and semiconductor layers with a low refractive index (n<3.3) can be arranged alternately. For example, the layer thickness can be 1/4 or a multiple of 1/4, where 1 indicates the wavelength of the light to be reflected. The first resonator mirror 141 can have, for example, 2 to 50 different layers. A typical layer thickness of the individual layers can be about 30 to 90 nm, for example about 50 nm. The layer stack can also contain one or two or more layers that are thicker than about 180 nm, for example thicker than 200 nm. For example, the first resonator mirror 141 can have an overall reflectivity of 99.8% or more for the laser radiation.

Layers of the first resonator mirror 141 can, for example, be doped with a first conductivity type, for example n-conducting. A first semiconductor layer 145 of a first conductivity type, for example n-conducting, can be arranged above the first resonator mirror 141 . Furthermore, the semiconductor layer stack can have a second semiconductor layer 150 of a second conductivity type, for example p-type. An active zone 155 may be arranged between the first semiconductor layer 145 and the second semiconductor layer 150 . The active zone 155 can have, for example, a pn junction, a double heterostructure, a single quantum well structure (SQW, single quantum well) or a multiple quantum well structure (MQW, multi quantum well) for generating radiation. The term "quantum well structure" has no meaning here with regard to the dimensionality of the quantization. It thus includes, among other things, quantum wells, quantum wires and quantum dots as well as any combination of these layers. A suitable insulating layer 158 extends from the edge of the semiconductor laser element 105 in the direction of the Center of the semiconductor laser element 105, so that a conductive area remains in the central area.An aperture 156 for current conduction is formed through the areas of the insulating layer 158. The first semiconductor layer 145 can be electrically connected via a first contact element 127, the second semiconductor layer 150 is, for example electrically connectable via a second contact element 126 (not shown in FIG. 1C) and optionally a surface contact element 128. For example, a diameter of an emitted laser beam can be approximately 10 μm.

The first and second semiconductor layers 145, 150 and layers of the active zone 150 can each contain GaN or a GaN-containing compound semiconductor material. An emission wavelength of the surface-emitting semiconductor laser element can be in a range from 400 to 470 nm, for example. The surface-emitting semiconductor laser element 105 is suitable for emitting narrow-band electromagnetic radiation. The emission wavelength, in particular of a VCSEL, is very temperature-stable and shows only a small temperature-dependent change. Accordingly, it is possible to use a converter for the surface-emitting semiconductor laser element 105 which has only a narrow absorption area has. When using a converter tuned to the wavelength of the surface-emitting semiconductor laser element 105, a thermal load is reduced.

1C shows an illustrative example of a surface-emitting semiconductor laser element 105. It is a matter of course that components of the surface-emitting semiconductor laser element 105 can be modified. According to further embodiments, the surface-emitting semiconductor laser element 105 can also be realized in a different way. For example, the surface-emitting semiconductor laser element 105 can also be implemented as an HCSEL (“Horizontal Cavity Surface Emitting Laser”), i.e. as a surface-emitting laser with a horizontal resonator. Alternatively, the surface-emitting semiconductor laser element 105 can also be a PCSEL (“Photonic Crystal Surface Emitting Laser”), i.e. semiconductor lasers , In which, for example, instead of resonator mirrors, a photonic crystal is provided, be rea lisiert.

FIG. 2 shows a schematic cross-sectional view of a semiconductor laser device 10 according to further embodiments.

Deviating from the embodiments shown in FIG. 1A, the converter 120 is arranged directly on the emission surface 103 or a surface of the surface-emitting semiconductor laser elements 105 here. For example, as shown in FIG. 1A , converter 120 may be formed as one element associated with a plurality of laser elements 105 . According to further embodiments, however, as shown in FIG. ₂ , each laser element 105 can be assigned its own converter region _121i , 1212, 1213. For example, the individual converter areas 121i can be integrated into a carrier 125 . The individual converter areas 121i can be identical or different from each other. For example, the carrier may contain a material with a high thermal conductivity mix. In the carrier 125 cavities can be formed for the converter material. Alternatively, patches of converter material may be formed on a planar support, such as by screen printing or the like. In this way, it is possible for the heat generated by the conversion to be dissipated locally.

In FIG. 2 , for example, the optical element 113 or the optical device 115 can form an upper closure of the housing 130 . The optical element 113 or optical device can be connected to side parts 135 of the housing. According to further embodiments, the carrier 125 can be omitted. According to further embodiments, a lateral extension of the carrier 125 can be smaller than that of the base part 131 of the housing 130 .

3A shows a schematic cross-sectional view of a portion of a workpiece 11 for forming semiconductor devices 10 according to embodiments. As indicated in FIG. 3A, a plurality of semiconductor laser devices 10 can be manufactured at the wafer level by common processing steps. For example, a semiconductor laser device 10 can each include a plurality of surface-emitting semiconductor laser elements 105 arranged over a suitable laser substrate 100 and electrically connected. The converter 120 can be connected to the optical element 113 or the optical device 115 . The converter 120 can, for example, be arranged at a distance from the surface-emitting semiconductor laser elements 105 or be adjacent to an emission surface 103 . According to embodiments, a carrier 125 can additionally be arranged over the surface-emitting semiconductor laser elements 105 be. The carrier 125 can be a glass with an antireflection layer, for example. A converter 120 can be applied to one side of the carrier 125 . According to further embodiments, the converter 120 can also be built into or integrated into the carrier 125 . For example, the carrier 125 can be a silicate with an admixture of a suitable converter 120 . According to embodiments, the carrier 125 can adjoin an emission surface 103 of the surface emitting semiconductor laser elements 105 .

For example, the or some of the surface-emitting semiconductor laser elements 105 of a semiconductor laser device 10 can be driven together. Each semiconductor laser device 10 can be assigned a separate converter element 120, which, for example, effects conversion into any desired color that is different in each case. Each semiconductor laser device 10 can also be assigned an individual optical element 113 of an optical device 115 . In this way, a very specific beam shape can be generated for each semiconductor device 10 .

According to embodiments, the converters 120 can also vary locally, so that a different color is emitted on the right-hand side of a semiconductor laser device than on the left-hand side of a semiconductor laser device.

3B shows another configuration of a semiconductor laser device 10 according to embodiments. In principle, the semiconductor laser device 10 shown in FIG. 3B is constructed similarly to that shown in FIG. 1A or 2. FIG. However, it is possible here to control individual surface-emitting semiconductor laser elements 105 in a targeted manner by means of a corresponding wiring structure. Correspondingly, for example, a large number of first contact elements 127 can be placed over the bo Denteil 131 may be arranged so as to effect a driving of the individual surface emitting semiconductor laser elements. The surface-emitting semiconductor laser elements 105 can also be driven via surface contact elements 128, which are electrically connected to the second contact elements 126, for example, via a first wiring 122. The surface contact elements 128 can each be applied to a top side of the laser substrate 100 . FIG. 3B further shows an optical device 115 comprising a plurality of optical elements 113 . Other elements are as described with reference to FIGS. 1A and 2. FIG. Any lighting pattern can be realized in this way.

3C shows a view of an arrangement of the individual surface-emitting semiconductor laser elements 105 and the associated circuit and wiring structures. As can be seen, the individual surface-emitting semiconductor laser elements 105 can each be controlled individually via second contact elements 126 and surface contact elements 128 . However, according to other embodiments, wiring patterns other than those illustrated in FIG. 3C can also be used. For example, the second contact elements 126 can be connected to the surface contact elements 128 via a first wiring 122 . 3C also shows an electronic control system 123 which is suitable for controlling each of the multiplicity of surface-emitting semiconductor laser elements individually.

For example, the semiconductor laser device 10 illustrated in Figures 3B and 3C can be incorporated into an automobile headlight. For example, the car headlight can be tracked to moving objects by selectively switching the individual surface-emitting semiconductor laser elements 105 on and off. Due to the low radiation Vergence of the emitted laser radiation there is no crosstalk and a higher contrast can be achieved.

4A shows a semiconductor laser device according to further embodiments. As illustrated in FIG. 4A, the semiconductor laser device 10 can have, for example, a plurality of surface-emitting semiconductor laser elements 105i, 105 ₂ , . . . , 105 _n . A single converter element 121i, 121 ₂ , . . . , 121 _n is assigned to each of the individual surface-emitting semiconductor laser elements. For example, the individual converter elements _121i , 121 ₂ , . The individual converter elements 121i can be arranged directly above the surface-emitting semiconductor laser elements and, for example, directly adjoin an emission surface 103 . The individual surface-emitting semiconductor laser elements 105i can be arranged above a laser substrate 100 or in the laser substrate 100 .

4B shows an example of a wiring scheme for electrically contacting the individual surface-emitting semiconductor laser elements 105i, 105 ₂ , ..., 105 ₄ . For example, a contact surface 124i, 124 _{2 . . .} 124 ₄ can be connected to an associated laser element _105i , 105 ₂ , . Thus, emission can be effected by the corresponding laser element 105i, 105 ₂ , ..., 105 _n . In this way, the semiconductor laser device 10 can shine in white with the desired color temperature, green, red or blue by appropriately driving the corresponding contact surfaces.

4C shows a plan view of the semiconductor laser device according to further embodiments, in which an alternative wiring is implemented. FIG. 4D shows a schematic view of a semiconductor laser device 10, in which the components shown in FIG. 4A are also applied to a bottom part 131 of a housing and correspondingly connected to a second contact element 126. An optical element 113 is applied over the surface-emitting semiconductor laser elements. For example, the optical element 113 can be implemented by an appropriately shaped or cast silicone element. For example, a silicone potting compound can be cast in the form of lenses. In this case, the optical element 113 together with the base part 131 can represent a housing of the semiconductor laser device 10 .

When using a plurality of surface-emitting semiconductor laser elements 105i, for example as shown in FIGS. 4A to 4D, each of which is associated with different converter regions 120i, a light source which, with suitable control, emits different colors or color temperatures, can be realized.

5A shows a schematic cross-sectional view of a portion of a workpiece 11 for forming semiconductor devices 10 according to embodiments. As indicated in FIG. 5A, a plurality of semiconductor laser devices 10 can be manufactured at the wafer level through common processing steps. As shown in FIG. 5A, different converter regions 121i can be attached to a carrier 125 in a manner similar to that described with reference to FIG. 1A. In this case, the individual converter regions 121i can each be aligned with the surface-emitting semiconductor laser elements 105 and spatially overlap with a surface-emitting semiconductor laser element 105 in each case. Since the individual surface-emitting semiconductor laser elements 105 are suitable for emitting highly directional radiation, there is no crosstalk between adjacent surface-emitting semiconductor laser elements 105, so that when a specific surface-emitting semiconductor laser element 105 is activated, emission into adjacent converter regions 121i can be reduced or prevented. The carrier 125 for the converter regions 121i can form a housing for the semiconductor laser device 10 in combination with the laser substrate 100 in each case. For example, the carrier 125 can contain a material with a high thermal conductivity. Cavities for the converter material can be formed in the carrier 125 . Alternatively, patches of converter material may be formed on a planar support, such as by screen printing or the like. In this way, it is possible for the heat generated by the conversion to be dissipated locally.

An optical element 113 or an optical device 115 can be provided on a surface of the carrier 125 facing away from the surface-emitting laser elements.

A light source with different colors can be realized by specifically addressing individual surface-emitting semiconductor laser elements.

According to further embodiments, deviating from embodiments described with reference to FIG. 5A, the converter regions 121i can also be arranged directly on the individual surface-emitting semiconductor laser elements 105i and directly border an emission surface 103. This is illustrated, for example, in FIG. 5B , which shows a workpiece 11 for forming semiconductor devices 10 according to embodiments. As indicated in FIG. 5B, a multiplicity of semiconductor laser devices 10 can be provided Wafer level are produced by common processing steps. The individual converter areas can be formed directly on the associated surface-emitting semiconductor laser elements 105, for example by screen printing.

According to embodiments, an optical element 113 or an optical device 115 can additionally be arranged, for example illustrated in a similar manner in FIG. 4D or 2 . In a similar manner as described above, the individual surface emitting laser elements 105i of the individual semiconductor laser devices can be driven individually in order to emit corresponding color patterns.

As has been described, by combining surface-emitting semiconductor laser elements that have a GaN-containing compound semiconductor layer with suitable converters, a light source can be provided that is suitable for emitting electromagnetic radiation in any color tones and also, for example, white with different color temperatures. For example, any colors or color temperatures as well as different lighting patterns can be set by suitable control.

Fig. 6 shows a schematic view of an optoelectronic component 15. The optoelectronic component 15 comprises the semiconductor laser device 10 described above Stages or film studios, a lighting device with high luminosity for buildings or a car headlight. Although specific embodiments have been illustrated and described herein, those skilled in the art will recognize that a variety of alternative and/or equivalent configurations may be substituted for the specific embodiments shown and described without departing from the scope of the invention. The application is intended to cover any adaptations or variations of the specific embodiments discussed herein. Therefore, the invention is to be limited only by the claims and their equivalents.

REFERENCE LIST

10 semiconductor laser device

11 workpiece

15 optoelectronic component

100 laser substrate

103 emission surface

105, 105i surface emitting semiconductor laser element

107 emitted laser beam

109 converted laser beam

113 optical element

115 optical device

120 converters

121i converter section

122 first wiring

123 control electronics

124 contact surface

125 carriers

126 second contact element

127 first contact element

128 surface contact element

130 housing

131 bottom part

135 side panel

137 second contact surface

139 first contact surface

140 second resonator mirror

141 first resonator mirror

145 first semiconductor layer

150 second semiconductor layer

155 active zone

156 aperture

158 insulating layer

159 optical resonator

Claims

PATENT CLAIMS

A semiconductor laser device (10) comprising: a surface emitting semiconductor laser element (105) having a GaN-containing compound semiconductor layer; and a converter (120) suitable for converting a wavelength of the laser radiation (107) emitted by the surface-emitting semiconductor laser element (105).

2. Semiconductor laser device (10) according to claim 1, further having a carrier (125), wherein the converter (120) is applied to the carrier (125) and the laser radiation (107) through the carrier (125) and converter (120) is radiated through.

3. The semiconductor laser device (10) according to claim 2, wherein the support is an optical element (113).

The semiconductor laser device (10) according to claim 1 or 2, further comprising an optical element (113) on a side of the converter (120) facing away from the surface emitting semiconductor laser element (105).

The semiconductor laser device (10) according to claim 2, further comprising an optical element (113) on a side of said converter (120) remote from said surface emitting semiconductor laser element (105), said optical element (113) being connected to said substrate (125). is.

6. Semiconductor laser device (10) according to one of the preceding claims, further comprising a housing (130) which has a bottom part (131) and side parts (135), the surface-emitting semiconductor laser element (105) being arranged above the bottom part (131) and the side panels (135) are arranged laterally adjacent to the surface emitting semiconductor laser element (105).

7. The semiconductor laser device (10) according to claim 6, further comprising a carrier (125), wherein the carrier (125) forms a closure of the housing (130).

8. The semiconductor laser device (10) according to claim 6, further comprising an optical element (113) which forms a closure of the Ge housing (130).

A semiconductor laser device (10) comprising: an array of a plurality of surface emitting semiconductor laser elements (105) having a GaN-containing compound semiconductor layer; and a converter (120) which is suitable for converting a wavelength of the laser radiation (107) emitted by the surface-emitting semiconductor laser elements (105).

10. The semiconductor laser device (10) as claimed in claim 9, wherein the plurality of surface-emitting semiconductor laser elements (105) is assigned a single converter (120).

11. The semiconductor laser device (10) according to claim 10, wherein the converter (120) varies spatially.

12. Semiconductor laser device (10) according to claim 9, wherein the converter (120) has a multiplicity of converter areas (121i) and each of the multiplicity of surface-emitting semiconductor laser elements (105) is assigned an associated converter area (121i).

13. Semiconductor laser device (10) according to any one of claims 9 to 12, further with control electronics (123) which is suitable for driving each of the plurality of surface emitting semiconductor laser elements (105) individually.

14. The semiconductor laser device (10) according to any one of claims 9 to 13, further comprising an optical device (115) on a side of the converter (120) facing away from the array of semiconductor laser elements (105).

15. The semiconductor laser device (10) as claimed in claim 14, wherein the optical device (115) has a plurality of optical elements (113) and an associated optical element (113) is associated with each of the plurality of surface-emitting semiconductor laser elements (105).

16. The semiconductor laser device (10) according to any one of claims 1 to 15, wherein the converter (120) is placed directly on the surface-emitting semiconductor laser elements (105).

17. The semiconductor laser device (10) according to claim 16, further comprising a bottom part (131) of a housing (130) on which the surface-emitting semiconductor laser element (105) is brought on, and an optical element (113) which men together with the bottom part (131) forms the housing (130) of the semiconductor laser device (10).

18. Optoelectronic component (15) with a semiconductor laser device (10) according to any one of the preceding claims.

19. Optoelectronic component (15) according to claim 18, which is selected from a micro-display device, a lighting device and a motor vehicle headlight.