WO2022242797A1 - Mehrfachsolarzelle - Google Patents
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- WO2022242797A1 WO2022242797A1 PCT/DE2022/100367 DE2022100367W WO2022242797A1 WO 2022242797 A1 WO2022242797 A1 WO 2022242797A1 DE 2022100367 W DE2022100367 W DE 2022100367W WO 2022242797 A1 WO2022242797 A1 WO 2022242797A1
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 66
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 66
- 239000010703 silicon Substances 0.000 claims abstract description 66
- 239000000463 material Substances 0.000 claims abstract description 17
- 230000003595 spectral effect Effects 0.000 claims abstract description 9
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 14
- 238000004519 manufacturing process Methods 0.000 claims description 14
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 10
- 230000036961 partial effect Effects 0.000 claims description 9
- 229910000314 transition metal oxide Inorganic materials 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 8
- 229910000676 Si alloy Inorganic materials 0.000 claims description 7
- 239000004020 conductor Substances 0.000 claims description 7
- 229910045601 alloy Inorganic materials 0.000 claims description 5
- 239000000956 alloy Substances 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- 239000011159 matrix material Substances 0.000 claims description 4
- 238000000034 method Methods 0.000 claims description 4
- 229910021424 microcrystalline silicon Inorganic materials 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 229910052799 carbon Inorganic materials 0.000 claims description 3
- 229910021423 nanocrystalline silicon Inorganic materials 0.000 claims description 2
- 238000010276 construction Methods 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 197
- 235000012431 wafers Nutrition 0.000 description 14
- 230000006798 recombination Effects 0.000 description 13
- 238000005215 recombination Methods 0.000 description 13
- 238000000151 deposition Methods 0.000 description 8
- 230000008021 deposition Effects 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 7
- 239000010409 thin film Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- 239000006096 absorbing agent Substances 0.000 description 2
- 230000003667 anti-reflective effect Effects 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 description 1
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 230000011712 cell development Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 231100000289 photo-effect Toxicity 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 229910002059 quaternary alloy Inorganic materials 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000011265 semifinished product Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/043—Mechanically stacked PV cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/078—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers including different types of potential barriers provided for in two or more of groups H01L31/062 - H01L31/075
Definitions
- the present invention relates to a multi-junction solar cell with at least two sub-cells based on silicon and at least one material other than silicon, a first sub-cell for utilizing photons in a shorter-wave spectral range than a longer-wave spectral range of a second sub-cell being designed in that the second sub-cell is based on silicon and the first sub-cell on a material with a larger band gap than in silicon, wherein the first sub-cell and the second sub-cell are formed as a monolithic unit consisting of a stack of layers, and wherein the first sub-cell and the second sub-cell are electrically interconnected by means of a tunnel diode in Are connected in series, so that the tandem solar cell is equipped with two terminals, the tunnel diode having a tunnel diode n-layer and a tunnel diode p-layer.
- Tandem solar cells or other multiple solar cells in which two or more than two sub-cells with different spectral sensitivities together form the multiple solar cell, can theoretically and practically achieve higher efficiencies than single solar cells.
- Commercially available multi-junction solar cells made from III-V semiconductors achieve record efficiencies. Such solar cells are successfully used for extraterrestrial applications.
- III-V solar cells are not competitive with crystalline silicon solar cells because of the high production costs and ultimately high electricity generation costs.
- thin-film silicon solar cells and solar modules were manufactured, consisting of various amorphous and microcrystalline sub-cells, such as these are described for example in EP 2599 127 B1. Despite the low manufacturing costs, these thin-film manufacturing technologies were pushed out by manufacturing technologies based on crystalline solar wafers because the module efficiencies achieved were too low.
- Tandem solar cells made of two different materials e.g. combining a conventional silicon solar cell and a thin-film perovskite solar cell with a light-absorbing layer made of a perovskite material, and multi-junction solar cells, which also have at least one other perovskite layer, are currently being considered by experts as promising candidates for future mainstream solar cells viewed.
- Research laboratories have been able to improve the efficiency and stability of silicon perovskite tandem solar cells in recent years. However, further technical improvements are required for a successful industrial production of silicon perovskite tandem solar cells.
- Leading laboratory demonstrator tandem solar cells such as those known from GB 2559800 B, are regularly constructed in a complex manner with a large number of layers and are correspondingly expensive to produce. However, low production costs are required for economic importance.
- the object of the present invention is therefore to propose simply constructed multiple solar cells.
- the object is achieved by multi-junction solar cells in which the tunnel diode n-layer and/or the tunnel diode p-layer are silicon-based layers.
- the sub-cells are connected in series with one another in the same direction.
- individual solar cells and sub-cells of multiple solar cells can be represented as diodes that are all connected in the forward direction in the series connection of the multiple solar cell.
- the p- and n-conductive layers in the sub-cells are each arranged in the same order.
- an n-conducting layer and a p-conducting layer must be connected to one another in a sequence which is the reverse of the layer sequence in the individual sub-cells. If the meeting n-conducting layer on one sub-cell and a p-conducting layer on the other sub-cell form a (connecting) diode, then this diode would be reverse-biased. Since a current flow is still required, the conductive connection between the n- and p-conductive layer is designed as a tunnel diode, which enables the required current flow despite the existing layer sequence.
- the layer of one conductivity type (n- or p-) that borders the layer of the other conductivity type (p- or n-) of the sub-cell is also referred to as the recombination layer because it consists of the n-conducting layer the electrons flowing from one sub-cell and the holes flowing from the p-type layer of the other sub-cell recombine with each other.
- Various silicon-based recombination layers that are easy to produce and correspondingly inexpensive are known from Si thin-layer solar cells. According to the invention, similar recombination layers can be used in tandem and multiple solar cells which consist of at least two different materials, for example in silicon perovskite tandem cells. The properties of the recombination layers can be optimized for optimal function.
- the tunnel junction can be formed at the interface of a sub-cell and a recombination layer or between two tunnel diode layers which are arranged in the multi-junction solar cell in addition to the layers belonging to the sub-cells.
- the tunnel junction can be formed between this n-type Si layer and a p-type silicon-based recombination layer.
- the n-type Si layer serves as the tunnel diode n-layer and the p-type silicon-based recombination layer serves as the tunnel diode p-layer.
- the layer of the Si partial cell to be connected is p-conductive and the recombination layer is n-conductive.
- the multi-junction solar cell has two inversely doped silicon-based layers between the sub-cells to be connected, of which one is the tunnel diode n-layer and the other is the tunnel diode p-layer.
- the tunnel diode is formed between an n-type silicon-based recombination layer and a p-type layer of the first sub-cell or between a p-type silicon-based recombination layer and an n-type layer of the first sub-cell.
- the silicon-based layer can be a more or less dense silicon layer; in addition to silicon, it can have other components, in particular hydrogen and dopants.
- the silicon-based layer can also be a silicon alloy, for example with oxygen (O), carbon (C) or nitrogen (N).
- O oxygen
- C carbon
- N nitrogen
- silicon-based means that silicon is an essential component of the layer or that the atomic fraction of silicon is greater than 30%. In many exemplary embodiments, the silicon content is well over 50%.
- At least one of the tunnel diode n-layer and/or the tunnel diode p-layer of the multiple solar cell according to the invention can be a doped alloy of silicon and at least one further alloy component M with the empirical formula SiM x - layer (8, 9), where M stands for at least one of the elements O, C or N.
- the alloy can also be a ternary or a quaternary alloy containing two or three of the specified elements.
- the class of SiM x alloy layers includes very different materials, for example layers in which conductive Si grains are embedded in a less conductive SiO x N y or in a SiN x matrix.
- SiM x Other materials can be formed in two phases from a matrix and well conductive SiC grains embedded therein. However, single-phase semiconducting layers containing silicon carbide bonds also fall under the formula SiM x .
- the tunnel diode n-layer is a highly n-doped Si surface higher doping layer of the second sub-cell and the tunnel diode p-layer is a doped SiM x layer with x ⁇ l, the SiM x - Layer is inhomogeneous and consists of a silicon alloy matrix and embedded silicon inclusions.
- the tunnel diode does not consist entirely of additionally deposited layers.
- the surface higher doping layer made of silicon that is present anyway from the production of the second partial cell also serves as a tunnel diode n-layer, so that the tunnel diode is already produced after the deposition of one layer, namely the SiM x layer.
- SiM x layers can be designed as recombination layers with a high normal conductivity and a lower lateral conductivity. However, the SiM x layer can also have the same conductivities in the lateral and normal directions. At the discretion of a person skilled in the art, the SiM x can be substituted with alternative Si-based layer materials.
- both the tunnel diode n-layer and the tunnel diode p-layer can also be a doped SiM x layer.
- the tunnel diode can therefore also be produced from two oppositely doped silicon alloy layers SiM x layers. The layers can be post-treated accordingly to activate the dopants and/or to produce a microcrystalline layer structure.
- the post-treatment of deposited layers can be performed by a surface-active method, such as a flashlamp post-treatment.
- a surface-active method such as a flashlamp post-treatment.
- the SiM x layer in the multiple solar cell according to the invention can be a gradient layer, the electrical conductivity of the gradient layer at the interface of the pn junction of the tunnel diode being greater than at the other interface of the SiM x layer and the refractive index of the gradient layer in the direction of from the first sub-cell to the second sub-cell increases.
- the proportion of alloying material for example the proportion of oxygen in an SiO x layer, can therefore be a function of the layer thickness.
- Neighboring layer can be set in the perovskite sub-cell, so that reflection losses are minimized by the good optical adjustment.
- At least one of the tunnel diode n-layer and the tunnel diode p-layer of the inventive multi-junction solar cell may be a doped amorphous Si layer.
- Amorphous layers can be produced with good structural properties (conformal, smooth deposition) and reasonably good electrical properties. Optical losses can be minimized by small layer thicknesses, with small layer thicknesses also being associated with low production costs.
- An amorphous Si layer can form the tunnel diode as a recombination layer in cooperation with an adjacent layer of a sub-cell.
- At least one of the tunnel diode n-layer and the tunnel diode p-layer can also be a doped nano- or microcrystalline Si layer.
- the nano- or microcrystalline morphology can either have been produced during the layer deposition by suitable process parameters or after the deposition by a suitable after-treatment.
- the attributes nanocrystalline and microcrystalline refer to nanometer-scale or micrometer-scale crystallite dimensions. Crystallite dimensions are often similar in different spatial directions. Sometimes the largest crystallite dimension is in the micrometer range, while other crystallite dimensions are less than 1000 nm, ie in the nanometer range. This applies in particular to the layer thickness and the resulting normal dimensions.
- the second partial cell of the multiple solar cell according to the invention can be a silicon heterojunction solar cell in which the pn junction is between a crystalline silicon wafer and at least one layer of another material deposited thereon is trained.
- Heterojunction solar cells are the most powerful Si single solar cells available. They are therefore a good prerequisite for high overall efficiencies of the multiple solar cells based on them with one or more broadband sub-cells, which are based, for example, on a perovskite material.
- the silicon sub-cell can have a proven design including intrinsic passivation layers and surface textures. At least one amorphous silicon layer can be involved in the formation of the silicon heterojunction solar cell in addition to the crystalline silicon wafer.
- an n-crystalline solar wafer can be coated on one side with an intrinsic (i) aSi layer and a p-doped aSi layer to form the emitter of the solar cell.
- an intrinsic aSi layer and a higher than the substrate n-doped surface field layer are deposited, so that there is a potential gradient across the entire Si-HJT cell, which conducts the charge carriers separated by the photo effect to the contacts or the connections of the solar cell or the solar part cell promotes.
- the i- and the n-aSi layer can also be combined with one another as a gradient layer.
- Si heterojunction solar cells There are many different types of Si heterojunction solar cells.
- the substrate can be n- or p-doped, the emitter can be arranged on the side facing the sun or on the other side (rear side).
- the doped semiconductor layers can be amorphous, nano- or microcrystalline.
- the semiconducting material can be Si or an alloy such as SiC x or SiO x . All of these different solar cell types can also be the Si cell part of a multiple solar cell according to the invention.
- Nano- and microcrystalline layers can have advantages over amorphous layers, such as higher conductivity. These advantages can be exploited in a targeted manner when determining an optimal layer sequence in the silicon heterojunction solar cell.
- the second sub-cell of the multi-junction solar cell according to the invention namely an Si heterojunction solar cell, has an n-doped substrate, an intrinsic amorphous silicon layer and a p-doped amorphous silicon layer on its side facing away from the first sub-cell and a p-doped amorphous silicon layer on its side facing the first sub-cell n-doped gradient layer with lower doping at the interface to the silicon wafer, the multi-junction solar cell having an n-SiM x and a p-SiM x layer thereon in the specified order and then either a p-conducting transition metal oxide layer or directly a hole conductor layer of the first sub-cell having.
- This solar cell has a very simple structure and is made of readily available inexpensive materials.
- between the only two SiO x layers forming the tunnel diode are arranged on the two partial solar cells.
- a transition metal oxide layer is additionally arranged between the p-SiMx layer and the hole conduction layer of the first sub-cell. Transition metal oxide layers are proven as boundary layers to hole conductor layers.
- the second sub-cell has an n-doped substrate, on its side facing away from the first sub-cell an intrinsic amorphous silicon layer and a p-doped amorphous silicon layer and on its side facing the first sub-cell at least one n-Si layer, where the multi-junction solar cell has an amorphous p-Si layer on the n-Si layer and either a p-conducting transition metal oxide layer thereon or directly a hole conductor layer of the first sub-cell.
- the second sub-cell has an n-doped substrate, an intrinsic silicon layer and a p-doped silicon layer on its side facing away from the first sub-cell and at least one nano- or microcrystalline n-Si layer on its side facing the first sub-cell on, wherein the multi-junction solar cell has a nano- or microcrystalline p-Si layer on the nano- or microcrystalline n-Si layer and either a p-conducting transition metal oxide layer or directly a hole conductor layer of the first sub-cell.
- Intrinsic (i) Si layers can be present at the interface to the silicon.
- the i-Si layer can also be a layer within the (n)-Si layer that has been produced in a partial deposition step without doping gas inlet.
- at least one of the Si layers mentioned is present here with a nano- or microcrystalline structure instead of with an amorphous one.
- Nano- and microcrystalline layers have the advantage that high electrical conductivities can be set in them.
- the invention also includes solar modules made from multiple solar cells according to the invention.
- the present invention also includes a production method, in which a silicon-based tunnel diode n-layer and/or a silicon-based tunnel diode p-layer is deposited in corresponding method steps.
- Fig. 1 shows a first embodiment of a multiple solar cell according to the invention 1 and
- FIG. 2 shows a second exemplary embodiment of a multiple solar cell 1 according to the invention.
- Fig. 1 outlines the structure of an exemplary embodiment of a flexible product of a multi-junction solar cell 1 according to the invention.
- the multi-junction solar cell consists of a first sub-cell 2, a second sub-cell 3 and a tunnel diode 5 connecting the sub-cells 2, 3.
- the multi-junction solar cell is a crystalline Silicon solar wafers 10 produced.
- the properties of deposited layers depend heavily on the deposition method used and the general conditions before and after the deposition, so there is a close connection between the multiple solar cell 1 according to the invention and the manufacturing method according to the invention.
- the multiple solar cell 1 is a tandem solar cell, the front side of which, which is provided in the direction of the sun, is shown at the top.
- a short-wave, particularly visible, spectral component is absorbed by the first partial cell and converted into a photocurrent
- a longer-wave, particularly infrared, spectral range is allowed to pass through to the second partial cell and there converted to a photocurrent.
- the photocurrents generated by the two or, more generally, by all sub-cells are designed to be of equal magnitude in multi-junction solar cells which are inexpensively equipped with only two connections, in order to maximize the performance and efficiency of the multi-junction solar cell.
- the second sub-cell 3 is a silicon heterojunction solar cell based on an n-doped wafer.
- N-doped starting wafers are currently preferred for high-performance solar cells, but in principle p-doped solar wafers can also be used as the starting material for multi-junction solar cells.
- the silicon wafer is textured on both sides here because the best efficiencies are achieved with textured solar cells.
- an intrinsic (i) amorphous silicon layer (aSi) 11 and then a p-doped aSi layer 12 are arranged on the rear side of the solar wafer 10 , which forms the emitter of the Si Fleterojunction partial cell 3 .
- the emitter is on the front.
- the a-Si layers 11, 12, 13 are regularly produced with CVD methods using hydrogen-containing precursors, with the hydrogen being partly present in the layers is installed. That is why the aSi layers are, strictly speaking, hydrogenated aSi layers (aSi:H). This detail is well known to those skilled in the art, so there is no need to refer to it.
- aSi:H hydrogenated aSi layers
- the system used to produce the n-conducting aSi gradient layer has a simpler structure because only one deposition chamber (instead of two separate ones for i and n) is required.
- the illustrated semi-finished product of a multi-junction solar cell 1 is closed off at the bottom by a transparent conductive layer (TCO) 18, the TCO 18 serving on the one hand as a first part of an electrical connection electrode and on the other hand as an antireflection layer.
- the electrical connection in the solar module produced from the multiple solar cell 1 also includes other components that are not shown here, namely here screen-printed contact fingers and wire-shaped bus lines connected thereto. In other exemplary embodiments, other electrodes are used, for example with screen-printed bus lines or large-area metal surfaces.
- the first sub-cell 2 consists of the perovskite absorber layer 4, an organic hole conduction layer 15 and a metal transition oxide layer 14 on the underside of this first sub-cell 2 and an electron conduction layer 16 and a TCO layer 17 on the front side of the first sub-cell 2.
- Other electrode components are as well as on the rear side of the multi-junction solar cell 1 are omitted in FIG. 1 for the sake of clarity.
- the electrical and optical connection of the first sub-cell 2 and the second sub-cell 3 is implemented by means of a tunnel diode 5 in the exemplary embodiment presented here.
- the n-type SiO x layer 8 has the function of the tunnel diode n-layer 6 and the p-type SiO x layer 9 has the function of the tunnel diode p-layer 7.
- the SiO x layers 8, 9 are used for Formation of a tunnel junction between the two SiO x layers 8, 9 designed.
- FIG. 2 A second exemplary embodiment of a multiple solar cell 1' according to the invention is presented in FIG. 2, which has an even simpler structure than the multiple solar cell 1 shown in FIG. Apart from the differences set out below, this second exemplary embodiment also has things in common with the first exemplary embodiment. To avoid repetition, reference is therefore made to the statements relating to FIG. In this case, only a single layer is arranged between the first sub-cell 2 and the second sub-cell 3, specifically the p-doped aSi - Layer serving as the tunnel diode p-layer 7 or as the recombination layer.
- the function of the tunnel diode n-layer is not taken over by a separately deposited layer, but by the n-conducting aSi gradient layer 13 of the second sub-cell 3 as an additional function. This results in a particularly simple construction of the multiple solar cell 1'.
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- Computer Hardware Design (AREA)
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Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP22724635.2A EP4342003A1 (de) | 2021-05-21 | 2022-05-17 | Mehrfachsolarzelle |
AU2022277275A AU2022277275A1 (en) | 2021-05-21 | 2022-05-17 | Multi-junction solar cell |
CN202280035377.3A CN117321776A (zh) | 2021-05-21 | 2022-05-17 | 多结太阳能电池 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102021113294.0A DE102021113294B4 (de) | 2021-05-21 | 2021-05-21 | Mehrfachsolarzelle |
DE102021113294.0 | 2021-05-21 |
Publications (1)
Publication Number | Publication Date |
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WO2022242797A1 true WO2022242797A1 (de) | 2022-11-24 |
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ID=81750366
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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PCT/DE2022/100367 WO2022242797A1 (de) | 2021-05-21 | 2022-05-17 | Mehrfachsolarzelle |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP4342003A1 (de) |
CN (1) | CN117321776A (de) |
AU (1) | AU2022277275A1 (de) |
DE (1) | DE102021113294B4 (de) |
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