WO2022242547A1 - Polyimide porous membrane and preparation method therefor - Google Patents
Polyimide porous membrane and preparation method therefor Download PDFInfo
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- WO2022242547A1 WO2022242547A1 PCT/CN2022/092540 CN2022092540W WO2022242547A1 WO 2022242547 A1 WO2022242547 A1 WO 2022242547A1 CN 2022092540 W CN2022092540 W CN 2022092540W WO 2022242547 A1 WO2022242547 A1 WO 2022242547A1
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- porous membrane
- polyimide porous
- preparation
- polyimide
- dianhydride
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- 229920001721 polyimide Polymers 0.000 title claims abstract description 103
- 239000004642 Polyimide Substances 0.000 title claims abstract description 72
- 239000012528 membrane Substances 0.000 title claims abstract description 51
- 238000002360 preparation method Methods 0.000 title claims abstract description 21
- 238000010438 heat treatment Methods 0.000 claims abstract description 70
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 24
- 238000000034 method Methods 0.000 claims abstract description 24
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 claims abstract description 21
- 239000013067 intermediate product Substances 0.000 claims abstract description 20
- 239000011248 coating agent Substances 0.000 claims abstract description 18
- 238000000576 coating method Methods 0.000 claims abstract description 18
- 125000003118 aryl group Chemical group 0.000 claims abstract description 9
- 239000003989 dielectric material Substances 0.000 claims abstract description 7
- 239000002253 acid Substances 0.000 claims abstract description 6
- 238000003756 stirring Methods 0.000 claims abstract description 3
- 229920005575 poly(amic acid) Polymers 0.000 claims description 55
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 44
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 34
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 claims description 31
- DVKJHBMWWAPEIU-UHFFFAOYSA-N toluene 2,4-diisocyanate Chemical group CC1=CC=C(N=C=O)C=C1N=C=O DVKJHBMWWAPEIU-UHFFFAOYSA-N 0.000 claims description 26
- 150000003949 imides Chemical class 0.000 claims description 25
- UPMLOUAZCHDJJD-UHFFFAOYSA-N 4,4'-Diphenylmethane Diisocyanate Chemical compound C1=CC(N=C=O)=CC=C1CC1=CC=C(N=C=O)C=C1 UPMLOUAZCHDJJD-UHFFFAOYSA-N 0.000 claims description 22
- 239000002245 particle Substances 0.000 claims description 19
- 239000007787 solid Substances 0.000 claims description 18
- 229910052757 nitrogen Inorganic materials 0.000 claims description 17
- 239000000203 mixture Substances 0.000 claims description 13
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical group CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 claims description 11
- ANSXAPJVJOKRDJ-UHFFFAOYSA-N furo[3,4-f][2]benzofuran-1,3,5,7-tetrone Chemical compound C1=C2C(=O)OC(=O)C2=CC2=C1C(=O)OC2=O ANSXAPJVJOKRDJ-UHFFFAOYSA-N 0.000 claims description 11
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 3
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 239000000919 ceramic Substances 0.000 claims description 3
- 239000002904 solvent Substances 0.000 claims description 3
- VQVIHDPBMFABCQ-UHFFFAOYSA-N 5-(1,3-dioxo-2-benzofuran-5-carbonyl)-2-benzofuran-1,3-dione Chemical group C1=C2C(=O)OC(=O)C2=CC(C(C=2C=C3C(=O)OC(=O)C3=CC=2)=O)=C1 VQVIHDPBMFABCQ-UHFFFAOYSA-N 0.000 claims description 2
- 238000007334 copolymerization reaction Methods 0.000 claims description 2
- RUELTTOHQODFPA-UHFFFAOYSA-N toluene 2,6-diisocyanate Chemical compound CC1=C(N=C=O)C=CC=C1N=C=O RUELTTOHQODFPA-UHFFFAOYSA-N 0.000 claims description 2
- VGHSXKTVMPXHNG-UHFFFAOYSA-N 1,3-diisocyanatobenzene Chemical compound O=C=NC1=CC=CC(N=C=O)=C1 VGHSXKTVMPXHNG-UHFFFAOYSA-N 0.000 claims 1
- YJMRXMITYTUIBB-UHFFFAOYSA-N 2-[2,4,5-tris(carboxymethyl)phenyl]acetic acid Chemical group OC(=O)Cc1cc(CC(O)=O)c(CC(O)=O)cc1CC(O)=O YJMRXMITYTUIBB-UHFFFAOYSA-N 0.000 claims 1
- LFBALUPVVFCEPA-UHFFFAOYSA-N 4-(3,4-dicarboxyphenyl)phthalic acid Chemical compound C1=C(C(O)=O)C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)C(C(O)=O)=C1 LFBALUPVVFCEPA-UHFFFAOYSA-N 0.000 claims 1
- 150000001408 amides Chemical class 0.000 claims 1
- 239000012948 isocyanate Substances 0.000 claims 1
- 150000002513 isocyanates Chemical class 0.000 claims 1
- 239000011521 glass Substances 0.000 abstract description 59
- 239000011148 porous material Substances 0.000 abstract description 21
- 239000002798 polar solvent Substances 0.000 abstract description 5
- 229920000642 polymer Polymers 0.000 abstract description 4
- 239000004952 Polyamide Substances 0.000 abstract description 3
- 229920002647 polyamide Polymers 0.000 abstract description 3
- 230000008878 coupling Effects 0.000 abstract description 2
- 238000010168 coupling process Methods 0.000 abstract description 2
- 238000005859 coupling reaction Methods 0.000 abstract description 2
- 230000001939 inductive effect Effects 0.000 abstract description 2
- 230000008054 signal transmission Effects 0.000 abstract description 2
- 238000002156 mixing Methods 0.000 abstract 1
- 239000000243 solution Substances 0.000 description 28
- 239000007789 gas Substances 0.000 description 21
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 16
- 238000001816 cooling Methods 0.000 description 15
- 238000009835 boiling Methods 0.000 description 14
- 238000005530 etching Methods 0.000 description 13
- 238000001020 plasma etching Methods 0.000 description 12
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 10
- 239000001307 helium Substances 0.000 description 10
- 229910052734 helium Inorganic materials 0.000 description 10
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 10
- CWHFDTWZHFRTAB-UHFFFAOYSA-N phenyl cyanate Chemical compound N#COC1=CC=CC=C1 CWHFDTWZHFRTAB-UHFFFAOYSA-N 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000003361 porogen Substances 0.000 description 4
- 229910052681 coesite Inorganic materials 0.000 description 3
- 229910052906 cristobalite Inorganic materials 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 229910052682 stishovite Inorganic materials 0.000 description 3
- 229910052905 tridymite Inorganic materials 0.000 description 3
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- 150000008064 anhydrides Chemical class 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- -1 carboxylic acid dianhydride Chemical class 0.000 description 2
- 239000007888 film coating Substances 0.000 description 2
- 238000009501 film coating Methods 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- CBCKQZAAMUWICA-UHFFFAOYSA-N 1,4-phenylenediamine Chemical compound NC1=CC=C(N)C=C1 CBCKQZAAMUWICA-UHFFFAOYSA-N 0.000 description 1
- REYJJPSVUYRZGE-UHFFFAOYSA-N Octadecylamine Chemical compound CCCCCCCCCCCCCCCCCCN REYJJPSVUYRZGE-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- UHOVQNZJYSORNB-UHFFFAOYSA-N benzene Substances C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- 239000000872 buffer Substances 0.000 description 1
- 239000007853 buffer solution Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 125000005442 diisocyanate group Chemical group 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 150000002466 imines Chemical class 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 238000006068 polycondensation reaction Methods 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000000930 thermomechanical effect Effects 0.000 description 1
- 238000004383 yellowing Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J9/00—Working-up of macromolecular substances to porous or cellular articles or materials; After-treatment thereof
- C08J9/26—Working-up of macromolecular substances to porous or cellular articles or materials; After-treatment thereof by elimination of a solid phase from a macromolecular composition or article, e.g. leaching out
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J5/00—Manufacture of articles or shaped materials containing macromolecular substances
- C08J5/18—Manufacture of films or sheets
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J9/00—Working-up of macromolecular substances to porous or cellular articles or materials; After-treatment thereof
- C08J9/04—Working-up of macromolecular substances to porous or cellular articles or materials; After-treatment thereof using blowing gases generated by a previously added blowing agent
- C08J9/06—Working-up of macromolecular substances to porous or cellular articles or materials; After-treatment thereof using blowing gases generated by a previously added blowing agent by a chemical blowing agent
- C08J9/08—Working-up of macromolecular substances to porous or cellular articles or materials; After-treatment thereof using blowing gases generated by a previously added blowing agent by a chemical blowing agent developing carbon dioxide
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2201/00—Foams characterised by the foaming process
- C08J2201/04—Foams characterised by the foaming process characterised by the elimination of a liquid or solid component, e.g. precipitation, leaching out, evaporation
- C08J2201/044—Elimination of an inorganic solid phase
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2201/00—Foams characterised by the foaming process
- C08J2201/04—Foams characterised by the foaming process characterised by the elimination of a liquid or solid component, e.g. precipitation, leaching out, evaporation
- C08J2201/044—Elimination of an inorganic solid phase
- C08J2201/0442—Elimination of an inorganic solid phase the inorganic phase being a metal, its oxide or hydroxide
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2203/00—Foams characterized by the expanding agent
- C08J2203/02—CO2-releasing, e.g. NaHCO3 and citric acid
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2379/00—Characterised by the use of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen, or carbon only, not provided for in groups C08J2361/00 - C08J2377/00
- C08J2379/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
- C08J2379/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/10—Energy storage using batteries
Definitions
- the disclosure relates to the technical field of preparation of polymer dielectric materials, in particular to a polyimide porous film and a preparation method thereof.
- the dielectric constant of a material is closely related to its molar susceptibility and molar volume. Therefore, there are currently two main methods for reducing the dielectric constant of PI: (1) introducing substituents with low polarizability to reduce the polarizability of dipoles in the molecule. (2) To reduce the number of dipoles per unit volume by introducing bulky groups or even hole structures inside the material.
- Ordinary polyimide films have a dielectric constant of 3 to 4, which cannot meet the needs of integrated circuits at this stage.
- Traditional polyimide porous films have low dielectric constants, but their pores are not uniformly distributed, and thermal Poor stability and poor dimensional stability.
- Pm is the molar polarizability of the atomic group
- Vm is the molar volume of the atomic group.
- the disclosure provides a method for preparing a polyimide porous membrane. Two different aromatic diisocyanates are dissolved in a polar solvent, and then an aromatic dianhydride is added, and the intermediate product polyamic acid is fully stirred to obtain the intermediate product polyamic acid, and then the polyimide The amic acid is coated on a glass plate after defoaming, and then heat-treated to obtain the polyimide porous membrane.
- the intermediate product polyamic acid after obtaining the intermediate product polyamic acid, add a pore-forming agent to mix evenly, and then apply it on a glass plate after defoaming, then perform heat treatment, and finally remove the pore-forming agent to obtain the polyamic acid. imine porous membrane.
- the aromatic diisocyanate is selected from 4-methyl-m-phenylene diisocyanate, 2,6-toluene diisocyanate, 4,4'-methylene bis(phenylisocyanate) , 2,4,6-trimethyl-1,3-benzenediisocyanate or 2,3,5,6-tetramethyl-1,4-benzenediisocyanate;
- the aromatic dianhydride is selected from From 3,4,3',4'-benzophenone tetracarboxylic dianhydride, 1,2,4,5-benzenetetracarboxylic dianhydride, 3,4,3',4'-biphenyl One of tetracarboxylic dianhydrides.
- the polar solvent is selected from one or more of N,N-dimethylformamide, N,N-dimethylacetamide, and N-methylpyrrolidone.
- the pore-forming agent is selected from one or more of SiO 2 , ceramics, aluminum powder, and magnesium powder.
- the conditions for the copolymerization of two different aromatic diisocyanates and aromatic dianhydrides are nitrogen protection and a temperature of 0-40°C.
- two different aromatic diisocyanates and aromatic dianhydrides are thoroughly stirred to obtain an intermediate polyamic acid, and the solid content of the polyamic acid is between 13-16 wt%.
- the heat treatment employs a stepwise increase in temperature.
- the two different aromatic diisocyanates are 4,4'-methylenebis(phenylisocyanate) and 4-methyl-m-phenylene diisocyanate; the aromatic diisocyanate
- the anhydride is 1,2,4,5-benzenetetracarboxylic dianhydride.
- the sum of the molar weights of 4,4'-methylenebis(phenylisocyanate), 4-methyl-m-phenylene diisocyanate and 1,2,4,5-benzene is 1:1.
- the molar amount of 4,4'-methylene bis(phenylisocyanate) is less than the molar amount of 4-methyl-m-phenylene diisocyanate.
- the pore-forming agent is SiO 2
- the SiO 2 is nano-scale SiO 2 .
- the average particle diameter of the nanoscale SiO 2 is 5-45 nm.
- the present disclosure also provides a polyimide porous membrane prepared by any one of the above methods.
- the dielectric constant of the polyimide porous membrane is 1.45-1.98.
- the porosity of the polyimide porous membrane is 68-79%.
- the porosity of the polyimide porous membrane is 73-79%.
- the thermal shrinkage of the polyimide porous membrane is 0.25-0.28% in the MD direction and 0.25-0.30% in the TD direction at 150°C.
- the present disclosure also provides the use of the above-mentioned porous imide film in dielectric materials.
- Figure 1 shows 4,4'-methylenebis(phenylisocyanate), 4-methyl-m-phenylene diisocyanate and 1,2,4,5-pyrylenetetramethyl in 11 embodiments of the present disclosure
- the chemical reaction formula of carboxylic dianhydride is 4,4'-methylenebis(phenylisocyanate), 4-methyl-m-phenylene diisocyanate and 1,2,4,5-pyrylenetetramethyl.
- the disclosure provides a method for preparing a polyimide porous film, which has low dielectric constant, uniform pore distribution, good thermal stability and good dimensional stability.
- Some embodiments of the present disclosure provide a method for preparing a polyimide porous membrane, the technical gist of which is: under nitrogen protection and a certain temperature condition, 4,4'-methylene bis(phenylisocyanate), 4-Methyl-m-phenylene diisocyanate is dissolved in a polar solvent, and 1,2,4,5-benzenetetracarboxylic dianhydride is added to stir the reaction to obtain the intermediate product polyamic acid, and the obtained polyamide After the acid is added into the pore-forming agent and mixed evenly, it is vacuum defoamed and then coated on a glass plate, subjected to thermal imidization treatment, and then the pore-forming agent is removed to obtain a polyimide porous membrane.
- the polar solvent is selected from one or more of N,N-dimethylformamide, N,N-dimethylacetamide, and N-methylpyrrolidone.
- the pore-forming agent is selected from one or more of SiO 2 , ceramics, aluminum powder, and magnesium powder.
- the pore-forming agent is SiO 2
- the SiO 2 is nano-scale SiO 2 . Since nano-scale SiO 2 has a more porous structure, it can absorb metal ions, reducing the possibility of oxidative yellowing; secondly, nano-scale SiO 2 pore-forming agent has a larger packing density, which is easier to mix with resin and more Conducive to operation.
- the average particle size of nano-scale SiO2 is 5-45nm, such as 10-45nm, 15-40nm or 25-35nm.
- too small particle size is not conducive to pore formation, and too large particle size affects membrane Strength of.
- the average particle size of the nanoscale SiO 2 is 30nm.
- reaction temperature is 0-40°C, such as 5-40°C, 10-35°C or 20-30°C. In some typical embodiments, the reaction temperature is a water bath at 25°C.
- the polyamic acid has a solid content of 13-16 wt%, such as 13 wt%, 14 wt%, 15 wt% or 16 wt%.
- the solid content of the polyamic acid is 15 wt%.
- the heat treatment adopts a stepwise temperature rise
- the stepwise temperature rise process includes but is not limited to: first raise the temperature to 100°C and keep it for 30 minutes, then raise the temperature to 110°C and keep it for 30 minutes, then raise the temperature to 120°C and keep it for 60 minutes, and then raise the temperature to 140°C and keep it 60min, the stepwise temperature rise is only for the reaction, and has no obvious influence on the dielectric constant.
- the molar ratio of pyromellitic acid dianhydride is 1:1.
- the molar ratio of 4,4'-methylene bis(phenylisocyanate) to 4-methyl-m-phenylene diisocyanate is 2-8:2-8, such as 3 ⁇ 8: 3 ⁇ 8, 3 ⁇ 7: 3 ⁇ 7 or 4 ⁇ 6: 4 ⁇ 6;
- the molar amount of 4,4′-methylene bis(phenylisocyanate) is less than or equal to the molar amount of 4-methyl-m-phenylene diisocyanate.
- the molar ratio of 4,4'-methylene bis(phenylisocyanate) to 4-methyl-m-phenylene diisocyanate is 1-2:1-4, Such as 1:1, 2:3, 1:4. In some typical embodiments, the moles of 4,4'-methylenebis(phenylisocyanate) and 4-methyl-m-phenylene diisocyanate The ratio is 1:4.
- reactive ion etching is used to remove the porogen.
- the fluorine-containing gas generates free F under the plasma, and the free F reacts with SiO 2 to generate SiF 4 and oxygen.
- a hydrofluoric acid/ammonium fluoride buffer is used to remove the porogen.
- the fluorine-containing substance reacts with SiO 2 to generate SiF 4 and oxygen.
- the thickness of the coating film is 100-500 ⁇ m, such as 150-450 ⁇ m, 200-400 ⁇ m or 250-350 ⁇ m.
- the polyimide porous membrane has a thickness of 8-40 ⁇ m, such as 10-35 ⁇ m, 15-30 ⁇ m or 20-25 ⁇ m.
- the present disclosure provides a method for preparing a polyimide porous membrane.
- CO 2 is generated to facilitate the formation of pores
- nano-scale SiO 2 is added at the same time.
- Pore-forming agent is more conducive to the formation of pores, and makes the formed pores more uniform and higher in porosity, thereby obtaining high-performance polymers with low dielectric constant, uniform pore distribution, good thermal stability, and good dimensional stability. imide porous membrane.
- the skeleton volume V membrane skeleton of the membrane can be obtained through the density of the membrane raw material and the dry film quality, and the porosity is V pores /( V hole + V membrane skeleton );
- the dielectric constant of the film was measured by using an Agilent 4284A capacitance meter equipped with an Agilent 16451B dielectric connector. After testing the capacitance of the film, the dielectric constant was obtained by calculation, and the frequency was 1MHz.
- the glass transition temperature Tg is measured by thermomechanical method (TMA)
- the obtained film is put into a reactive ion etching machine and etched (with helium as shielding gas, CHF3 as etching gas), time 1h, removes SiO in the polyimide film pore - forming agent, obtains porous polyimide imide film.
- the obtained film is put into a reactive ion etching machine and etched (with helium as shielding gas, CHF3 as etching gas), time 1h, removes SiO in the polyimide film pore - forming agent, obtains porous polyimide imide film.
- the obtained film is put into a reactive ion etching machine and etched (with helium as protective gas, CHF3 as etching gas), time 1h, removes the SiO in the polyimide film pore - forming agent, obtains porous polyimide imide film.
- the obtained polyamic acid solution is degassed, and after degassing, it is coated on a clean glass plate with an automatic film coating machine, and the thickness of the coating film is 300 ⁇ m.
- the glass plate is placed in an oxygen-free oven, and the temperature is raised by steps ( Heat up to 100°C for 30 minutes, then heat up to 110°C for 30 minutes, then heat up to 120°C for 60 minutes, then heat up to 140°C for 60 minutes) heat treatment to form polyimide, after cooling to room temperature, take out the glass plate and put it in boiling water , the polyimide film was separated from the glass plate to obtain a porous imide film with a thickness of 18 ⁇ 1 ⁇ m.
- the obtained film is put into a reactive ion etching machine and etched (with helium as shielding gas, CHF3 as etching gas), time 1h, removes SiO in the polyimide film pore - forming agent, obtains porous polyimide imide film.
- the obtained film is put into a reactive ion etching machine and etched (with helium as shielding gas, CHF3 as etching gas), time 1h, removes SiO in the polyimide film pore - forming agent, obtains porous polyimide imide film.
- the obtained film is put into a reactive ion etching machine and etched (with helium as shielding gas, CHF3 as etching gas), time 1h, removes SiO in the polyimide film pore - forming agent, obtains porous polyimide imide film.
- the obtained film is put into a reactive ion etching machine and etched (with helium as shielding gas, CHF3 as etching gas), time 1h, removes SiO in the polyimide film pore - forming agent, obtains porous polyimide imide film.
- the obtained film is put into a reactive ion etching machine and etched (with helium as shielding gas, CHF3 as etching gas), time 1h, removes SiO in the polyimide film pore - forming agent, obtains porous polyimide imide film.
- the amine film is separated from the glass plate to obtain an imide film with a thickness of 18 ⁇ 1 ⁇ m, and the obtained film is placed in a reactive ion etching machine for etching (helium is used as the protective gas, CHF3 is used as the etching gas), and the time 1h, remove the SiO2 porogen in the polyimide film to obtain a porous polyimide film.
- a reactive ion etching machine for etching helium is used as the protective gas, CHF3 is used as the etching gas
- the obtained polyamic acid solution is defoamed, and after defoaming, it is coated on a clean glass plate with an automatic film coating machine.
- the thickness of the coating film is 300 ⁇ m.
- the temperature was raised to 175°C at a high speed, kept for 30 minutes, and the solvent DMF was removed.
- stepwise heating heating to 200°C for 30 minutes, then heating to 280°C for 10 minutes, then raising the temperature to 320°C for 5 minutes, then raising the temperature to 370°C for 3 minutes, and finally raising the temperature to 400°C °C heat preservation 1min
- thermal imidization into polyimide after cooling to room temperature, take out the glass plate and put it in boiling water to separate the polyimide film from the glass plate to obtain a polyimide film with a thickness of 18 ⁇ 1 ⁇ m .
- the polyimide porous membrane prepared by Implementation 1-11 of the present disclosure has a higher porosity, thereby obtaining a lower dielectric constant and a more uniform pore distribution, A high-performance polyimide porous membrane with higher thermal stability and higher dimensional stability.
- the disclosure provides a polyimide porous membrane and its preparation method and application.
- the polyimide porous membrane prepared by the disclosure has high porosity, low dielectric constant, uniform pore distribution, good thermal stability, and dimensional stability. Good and high performance, can be widely used in the field of dielectric materials, has excellent industrial application value and broad market prospects.
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Abstract
The present disclosure relates to the technical field of the preparation of polymer dielectric materials and discloses a polyimide porous membrane and a preparation method therefor. The preparation method comprises: dissolving two different aromatic diisocyanates in a polar solvent, then adding an aromatic dianhydride, fully stirring same to obtain an intermediate product polyamide acid, adding a pore-forming agent to the polyamide acid and mixing same until uniform, then defoaming same, coating a glass plate with same, then carrying out heat treatment, and finally, removing the pore-forming agent to obtain the polyimide porous membrane. By means of the special method, a high-performance polyimide porous membrane with a low dielectric constant, uniform pore distribution, good thermal stability and good dimensional stability is obtained, such that the signal transmission speed can be increased, signal interference and inductive coupling are reduced, and the polyimide porous membrane can be better applied in the integrated circuit industry.
Description
相关申请的交叉引用Cross References to Related Applications
本公开要求于2021年5月17日提交中国专利局的申请号为“CN202110533302.5”名称为“一种聚酰亚胺多孔膜及其制备方法”的中国专利申请的优先权,其全部内容通过引用结合在本公开中。This disclosure claims the priority of the Chinese patent application with the application number "CN202110533302.5" and the title "a polyimide porous membrane and its preparation method" submitted to the China Patent Office on May 17, 2021, the entire content of which Incorporated by reference in this disclosure.
本公开涉及聚合物介电材料制备的技术领域,具体涉及一种聚酰亚胺多孔膜及其制备方法。The disclosure relates to the technical field of preparation of polymer dielectric materials, in particular to a polyimide porous film and a preparation method thereof.
随着科学技术日新月异的发展,集成电路行业向着低维度、大规模甚至超大规模集成发展的趋势日益明显。为了加快信号的传输速度,减少信号干扰和感应偶合,必须使用低介电常数的材料。对于新一代的介电材料,要求介电常数在2.2以下。聚酰亚胺因其突出的热性能和力学性能,成为最有发展前途的聚合物介电材料。由于普通的聚酰亚胺介电常数通常在3~4之间,因此合成具有更低介电常数的聚酰亚胺材料已经成为目前研究的热点。With the rapid development of science and technology, the trend of the integrated circuit industry towards low-dimensional, large-scale and even ultra-large-scale integration has become increasingly obvious. In order to speed up signal transmission, reduce signal interference and inductive coupling, materials with low dielectric constant must be used. For a new generation of dielectric materials, the dielectric constant is required to be below 2.2. Polyimide has become the most promising polymer dielectric material because of its outstanding thermal and mechanical properties. Since the dielectric constant of ordinary polyimide is usually between 3 and 4, the synthesis of polyimide materials with lower dielectric constant has become a research hotspot.
根据Clausius Mossotti方程,材料的介电常数与其摩尔极化率和摩尔体积密切相关。因此,目前降低PI介电常数的方法主要有两大类:(1)引入低极化能力的取代基以减少分子中偶极子的极化能力。(2)通过在材料内部引入大体积的基团甚至孔洞结构,以减少单位体积内偶极子的数目。According to the Clausius Mossotti equation, the dielectric constant of a material is closely related to its molar susceptibility and molar volume. Therefore, there are currently two main methods for reducing the dielectric constant of PI: (1) introducing substituents with low polarizability to reduce the polarizability of dipoles in the molecule. (2) To reduce the number of dipoles per unit volume by introducing bulky groups or even hole structures inside the material.
普通的聚酰亚胺薄膜的介电常数在3~4,已不能满足现阶段集成电路的需要,而传统聚酰亚胺多孔膜有较低的介电常数,但是其孔隙分布不均匀,热稳定性较差,尺寸稳定性不好。Ordinary polyimide films have a dielectric constant of 3 to 4, which cannot meet the needs of integrated circuits at this stage. Traditional polyimide porous films have low dielectric constants, but their pores are not uniformly distributed, and thermal Poor stability and poor dimensional stability.
其中,Pm为原子团的摩尔极化率,Vm为原子团摩尔体积。Among them, Pm is the molar polarizability of the atomic group, and Vm is the molar volume of the atomic group.
发明内容Contents of the invention
本公开提供一种聚酰亚胺多孔膜的制备方法,将两种不同的芳族二异氰酸酯溶于极性溶剂中,再加入芳族二酐,充分搅拌得中间产物聚酰胺酸,再将聚酰胺酸脱泡后涂覆在玻璃板上,然后进行热处理,得到所述聚酰亚胺多孔膜。The disclosure provides a method for preparing a polyimide porous membrane. Two different aromatic diisocyanates are dissolved in a polar solvent, and then an aromatic dianhydride is added, and the intermediate product polyamic acid is fully stirred to obtain the intermediate product polyamic acid, and then the polyimide The amic acid is coated on a glass plate after defoaming, and then heat-treated to obtain the polyimide porous membrane.
在一些实施方式中,在得到中间产物聚酰胺酸后,再加入成孔剂进行混合均匀,后脱泡后涂覆在玻璃板上,然后进行热处理,最后除去成孔剂即得到所述聚酰亚胺多孔膜。In some embodiments, after obtaining the intermediate product polyamic acid, add a pore-forming agent to mix evenly, and then apply it on a glass plate after defoaming, then perform heat treatment, and finally remove the pore-forming agent to obtain the polyamic acid. imine porous membrane.
在一些实施方式中,所述芳族二异氰酸酯选自4-甲基-间亚苯基二异氰酸酯、2,6-甲苯二异氰酸酯、4,4′-亚甲基双(异氰酸苯酯)、2,4,6-三甲基-1,3-苯二异氰酸酯或2,3,5,6-四甲基-1,4-苯二异氰酸酯中的一种;所述芳族二酐选自3,4,3’,4’-二苯甲酮四羧酸二酐、1,2,4,5-苯四甲羧酸二酐、3,4,3’,4’-联苯基四羧酸二酐中的一种。In some embodiments, the aromatic diisocyanate is selected from 4-methyl-m-phenylene diisocyanate, 2,6-toluene diisocyanate, 4,4'-methylene bis(phenylisocyanate) , 2,4,6-trimethyl-1,3-benzenediisocyanate or 2,3,5,6-tetramethyl-1,4-benzenediisocyanate; the aromatic dianhydride is selected from From 3,4,3',4'-benzophenone tetracarboxylic dianhydride, 1,2,4,5-benzenetetracarboxylic dianhydride, 3,4,3',4'-biphenyl One of tetracarboxylic dianhydrides.
在一些实施方式中,所述极性溶剂选自N,N-二甲基甲酰胺、N,N-二甲基乙酰胺、N-甲基吡咯烷酮中的一种或几种。In some embodiments, the polar solvent is selected from one or more of N,N-dimethylformamide, N,N-dimethylacetamide, and N-methylpyrrolidone.
在一些实施方式中,所述成孔剂选自SiO
2,陶瓷,铝粉,镁粉中的一种或几种。
In some embodiments, the pore-forming agent is selected from one or more of SiO 2 , ceramics, aluminum powder, and magnesium powder.
在一些实施方式中,两种不同的芳族二异氰酸酯与芳族二酐共聚反应条件为在氮气保护和0~40℃温度下。In some embodiments, the conditions for the copolymerization of two different aromatic diisocyanates and aromatic dianhydrides are nitrogen protection and a temperature of 0-40°C.
在一些实施方式中,两种不同的芳族二异氰酸酯与芳族二酐充分搅拌得到中间产物聚酰胺酸,所述聚酰胺酸的固含量在13~16wt%之间。In some embodiments, two different aromatic diisocyanates and aromatic dianhydrides are thoroughly stirred to obtain an intermediate polyamic acid, and the solid content of the polyamic acid is between 13-16 wt%.
在一些实施方式中,所述热处理采用阶梯升温。In some embodiments, the heat treatment employs a stepwise increase in temperature.
在另一些实施方式中,两种不同的芳族二异氰酸酯为4,4′-亚甲基双(异氰酸苯酯)和4-甲基-间亚苯基二异氰酸酯;所述芳族二酐为1,2,4,5-苯四甲羧酸二酐。In other embodiments, the two different aromatic diisocyanates are 4,4'-methylenebis(phenylisocyanate) and 4-methyl-m-phenylene diisocyanate; the aromatic diisocyanate The anhydride is 1,2,4,5-benzenetetracarboxylic dianhydride.
在一些实施方式中,所述4,4′-亚甲基双(异氰酸苯酯)、4-甲基-间亚苯基二异氰酸酯摩尔量之和与1,2,4,5-苯四甲羧酸二酐的摩尔比为1:1。In some embodiments, the sum of the molar weights of 4,4'-methylenebis(phenylisocyanate), 4-methyl-m-phenylene diisocyanate and 1,2,4,5-benzene The molar ratio of tetramethylcarboxylic dianhydride is 1:1.
在一些实施方式中,所述4,4′-亚甲基双(异氰酸苯酯)的投料摩尔 量小于4-甲基-间亚苯基二异氰酸酯的投料摩尔量。In some embodiments, the molar amount of 4,4'-methylene bis(phenylisocyanate) is less than the molar amount of 4-methyl-m-phenylene diisocyanate.
在另一些实施方式中,所述成孔剂为SiO
2,所述SiO
2为纳米级SiO
2。
In other embodiments, the pore-forming agent is SiO 2 , and the SiO 2 is nano-scale SiO 2 .
在一些实施方式中,所述纳米级SiO
2的平均粒径为5~45nm。
In some embodiments, the average particle diameter of the nanoscale SiO 2 is 5-45 nm.
本公开还提供了由上述任一种方法制备而得到得一种聚酰亚胺多孔膜。The present disclosure also provides a polyimide porous membrane prepared by any one of the above methods.
在一些实施方式中,所述聚酰亚胺多孔膜的介电常数为1.45~1.98。In some embodiments, the dielectric constant of the polyimide porous membrane is 1.45-1.98.
在一些实施方式中,所述聚酰亚胺多孔膜的孔隙率为68~79%。In some embodiments, the porosity of the polyimide porous membrane is 68-79%.
在一些实施方式中,所述聚酰亚胺多孔膜的孔隙率为73~79%。In some embodiments, the porosity of the polyimide porous membrane is 73-79%.
在一些实施方式中,所述聚酰亚胺多孔膜150℃下MD方向热收缩为0.25~0.28%,TD方向热收缩为0.25~0.30%。In some embodiments, the thermal shrinkage of the polyimide porous membrane is 0.25-0.28% in the MD direction and 0.25-0.30% in the TD direction at 150°C.
本公开还提供了上述的酰亚胺多孔膜在介电材料中的用途。The present disclosure also provides the use of the above-mentioned porous imide film in dielectric materials.
图1为本公开11种实施方式中4,4′-亚甲基双(异氰酸苯酯)、4-甲基-间亚苯基二异氰酸酯与1,2,4,5-苯四甲羧酸二酐的化学反应式。Figure 1 shows 4,4'-methylenebis(phenylisocyanate), 4-methyl-m-phenylene diisocyanate and 1,2,4,5-pyrylenetetramethyl in 11 embodiments of the present disclosure The chemical reaction formula of carboxylic dianhydride.
以下对本公开的实施方式进行详细说明。应当理解的是,此处所描述的实施方式仅用于说明和解释本公开,并不用于限制本公开。Embodiments of the present disclosure will be described in detail below. It should be understood that the embodiments described here are only used to illustrate and explain the present disclosure, and are not used to limit the present disclosure.
本公开提供一种聚酰亚胺多孔膜的制备方法,使其在具有低介电常数的同时,孔隙分布均匀,热稳定性好,尺寸稳定性好。The disclosure provides a method for preparing a polyimide porous film, which has low dielectric constant, uniform pore distribution, good thermal stability and good dimensional stability.
本公开一些实施方式提供一种聚酰亚胺多孔膜的制备方法,其技术要点是:在氮气保护和一定温度条件下,将4,4′-亚甲基双(异氰酸苯酯)、4-甲基-间亚苯基二异氰酸酯溶于极性溶剂中,再加入1,2,4,5-苯四甲羧酸二酐搅拌反应,得到中间产物聚酰胺酸,将得到的聚酰胺酸加入成孔剂混合均匀后,真空脱泡后涂覆在玻璃板上,进行热亚胺化处理,然后除去成孔剂,得到聚酰亚胺多孔膜。Some embodiments of the present disclosure provide a method for preparing a polyimide porous membrane, the technical gist of which is: under nitrogen protection and a certain temperature condition, 4,4'-methylene bis(phenylisocyanate), 4-Methyl-m-phenylene diisocyanate is dissolved in a polar solvent, and 1,2,4,5-benzenetetracarboxylic dianhydride is added to stir the reaction to obtain the intermediate product polyamic acid, and the obtained polyamide After the acid is added into the pore-forming agent and mixed evenly, it is vacuum defoamed and then coated on a glass plate, subjected to thermal imidization treatment, and then the pore-forming agent is removed to obtain a polyimide porous membrane.
这里,所述极性溶剂选自N,N-二甲基甲酰胺、N,N-二甲基乙酰胺、N-甲基吡咯烷酮中的一种或几种。Here, the polar solvent is selected from one or more of N,N-dimethylformamide, N,N-dimethylacetamide, and N-methylpyrrolidone.
这里,所述成孔剂选自SiO
2,陶瓷,铝粉,镁粉中的一种或几种。
Here, the pore-forming agent is selected from one or more of SiO 2 , ceramics, aluminum powder, and magnesium powder.
一些实施方式中,所述成孔剂为SiO
2,所述SiO
2为纳米级SiO
2。由于纳米级SiO
2具有更多孔的结构,可以吸附金属离子,使发生氧化变黄的可能性减小;其次纳米级SiO
2成孔剂具有较大的堆积密度,更容易与树脂混合,更利于操作。
In some embodiments, the pore-forming agent is SiO 2 , and the SiO 2 is nano-scale SiO 2 . Since nano-scale SiO 2 has a more porous structure, it can absorb metal ions, reducing the possibility of oxidative yellowing; secondly, nano-scale SiO 2 pore-forming agent has a larger packing density, which is easier to mix with resin and more Conducive to operation.
一些典型的实施方式中,纳米级SiO
2的平均粒径为5~45nm,诸如10~45nm、15~40nm或25~35nm,这里,粒径过小不利于成孔,粒径过大影响膜的强度。一些更典型的实施方式中,纳米级SiO
2的平均粒径为30nm。
In some typical embodiments, the average particle size of nano-scale SiO2 is 5-45nm, such as 10-45nm, 15-40nm or 25-35nm. Here, too small particle size is not conducive to pore formation, and too large particle size affects membrane Strength of. In some more typical embodiments, the average particle size of the nanoscale SiO 2 is 30nm.
一些实施方式中,4,4′-亚甲基双(异氰酸苯酯)、4-甲基-间亚苯基二异氰酸酯与1,2,4,5-苯四甲羧酸二酐共聚反应温度为0~40℃,诸如5~40℃、10~35℃或20~30℃。一些典型的实施方式中,反应温度为25℃水浴。In some embodiments, 4,4'-methylenebis(phenylisocyanate), 4-methyl-m-phenylene diisocyanate and 1,2,4,5-benzenetetramethylcarboxylic dianhydride are copolymerized The reaction temperature is 0-40°C, such as 5-40°C, 10-35°C or 20-30°C. In some typical embodiments, the reaction temperature is a water bath at 25°C.
一些实施方式中,所述聚酰胺酸的固含量在13~16wt%之间,诸如13wt%、14wt%、15wt%或16wt%。In some embodiments, the polyamic acid has a solid content of 13-16 wt%, such as 13 wt%, 14 wt%, 15 wt% or 16 wt%.
一些典型的实施方式中,所述聚酰胺酸的固含量为15wt%。In some typical embodiments, the solid content of the polyamic acid is 15 wt%.
一些实施方式中,所述热处理采用阶梯升温,阶梯升温过程包括但不限于:先升温至100℃保温30min,再升温至110℃保温30min,然后升温至120℃保温60min,再升温至140℃保温60min,采用阶梯升温只是为了反应进行,对介电常数无明显影响。In some embodiments, the heat treatment adopts a stepwise temperature rise, and the stepwise temperature rise process includes but is not limited to: first raise the temperature to 100°C and keep it for 30 minutes, then raise the temperature to 110°C and keep it for 30 minutes, then raise the temperature to 120°C and keep it for 60 minutes, and then raise the temperature to 140°C and keep it 60min, the stepwise temperature rise is only for the reaction, and has no obvious influence on the dielectric constant.
一些实施方式中,投料反应时所述4,4′-亚甲基双(异氰酸苯酯)、4-甲基-间亚苯基二异氰酸酯摩尔量之和与1,2,4,5-苯四甲羧酸二酐的摩尔比为1:1。In some embodiments, the sum of the molar weights of 4,4'-methylenebis(phenylisocyanate), 4-methyl-m-phenylene diisocyanate and 1,2,4,5 - The molar ratio of pyromellitic acid dianhydride is 1:1.
一些典型的实施方式中,所述4,4′-亚甲基双(异氰酸苯酯)与4-甲基-间亚苯基二异氰酸酯的摩尔比为2~8:2~8,诸如3~8:3~8、3~7:3~7或4~6:4~6;In some typical embodiments, the molar ratio of 4,4'-methylene bis(phenylisocyanate) to 4-methyl-m-phenylene diisocyanate is 2-8:2-8, such as 3~8: 3~8, 3~7: 3~7 or 4~6: 4~6;
一些典型的实施方式中,所述4,4′-亚甲基双(异氰酸苯酯)的投料摩尔量小于等于4-甲基-间亚苯基二异氰酸酯的投料摩尔量。In some typical embodiments, the molar amount of 4,4′-methylene bis(phenylisocyanate) is less than or equal to the molar amount of 4-methyl-m-phenylene diisocyanate.
一些更典型的实施方式中,所述4,4′-亚甲基双(异氰酸苯酯)与4-甲基-间亚苯基二异氰酸酯的摩尔比为1-2:1-4,诸如1:1、2:3、1:4. 一些典型的实施方式中,4,4′-亚甲基双(异氰酸苯酯)与4-甲基-间亚苯基二异氰酸酯的摩尔比为1:4。In some more typical embodiments, the molar ratio of 4,4'-methylene bis(phenylisocyanate) to 4-methyl-m-phenylene diisocyanate is 1-2:1-4, Such as 1:1, 2:3, 1:4. In some typical embodiments, the moles of 4,4'-methylenebis(phenylisocyanate) and 4-methyl-m-phenylene diisocyanate The ratio is 1:4.
一些实施方式中,使用反应离子刻蚀方法来除去成孔剂。采用该方法时,含氟气体在电浆下产生游离的F,游离的F与SiO
2反应生成SiF
4和氧气。
In some embodiments, reactive ion etching is used to remove the porogen. When using this method, the fluorine-containing gas generates free F under the plasma, and the free F reacts with SiO 2 to generate SiF 4 and oxygen.
一些实施方式中,使用氢氟酸/氟化铵的缓冲液来除去成孔剂。采用该方法时,含氟物质与SiO
2反应生成SiF
4和氧气。
In some embodiments, a hydrofluoric acid/ammonium fluoride buffer is used to remove the porogen. When using this method, the fluorine-containing substance reacts with SiO 2 to generate SiF 4 and oxygen.
一些实施方式中,涂膜厚度在100~500μm,诸如150~450μm、200~400μm或250~350μm。In some embodiments, the thickness of the coating film is 100-500 μm, such as 150-450 μm, 200-400 μm or 250-350 μm.
一些实施方式中,所述聚酰亚胺多孔膜的厚度为8~40μm,诸如10~35μm、15~30μm或20~25μm。In some embodiments, the polyimide porous membrane has a thickness of 8-40 μm, such as 10-35 μm, 15-30 μm or 20-25 μm.
本公开提供一种聚酰亚胺多孔膜的制备方法,通过采用两种不同的芳族二异氰酸酯与芳族二酐缩聚反应,生成了CO
2有利于孔的形成,同时加入了纳米级SiO
2成孔剂,更有利于孔的形成,并使形成的孔更加均匀,孔隙率更高,从而获得同时具有低介电常数、孔隙分布均匀、热稳定性好、尺寸稳定性好的高性能聚酰亚胺多孔膜。
The present disclosure provides a method for preparing a polyimide porous membrane. By adopting two different aromatic diisocyanate and aromatic dianhydride polycondensation reactions, CO 2 is generated to facilitate the formation of pores, and nano-scale SiO 2 is added at the same time. Pore-forming agent is more conducive to the formation of pores, and makes the formed pores more uniform and higher in porosity, thereby obtaining high-performance polymers with low dielectric constant, uniform pore distribution, good thermal stability, and good dimensional stability. imide porous membrane.
实施例Example
以下将通过实施例对本公开进行详细描述。Hereinafter, the present disclosure will be described in detail through examples.
在以下实施例和对比例中,性能参数按照如下方法测定:In the following examples and comparative examples, performance parameters are determined according to the following methods:
(1)孔隙率(1) Porosity
采用浸液法,根据薄膜浸湿水的前后质量变化,来确定膜的孔隙体积V
孔,该膜的骨架体积V
膜骨架可以通过膜原材料密度和干膜质量获得,孔隙率为V
孔/(V
孔+V
膜骨架);
Using the liquid immersion method, according to the mass change before and after the film is soaked in water, the pore volume V pores of the membrane is determined. The skeleton volume V membrane skeleton of the membrane can be obtained through the density of the membrane raw material and the dry film quality, and the porosity is V pores /( V hole + V membrane skeleton );
(2)介电常数(2) Dielectric constant
薄膜的介电常数通过采用装配有Agilent 16451B介电接头的Agilent 4284A型电容仪测定,经测试薄膜的电容后通过计算获得介电常数,频率为1MHz。The dielectric constant of the film was measured by using an Agilent 4284A capacitance meter equipped with an Agilent 16451B dielectric connector. After testing the capacitance of the film, the dielectric constant was obtained by calculation, and the frequency was 1MHz.
(3)尺寸稳定性(3) Dimensional stability
截取牵引方向(MD)为280mm,横向方向(TD)为255mm的薄膜一张,在膜的四角离边缘各为13mm处冲出直径为1mm的圆孔 各一个。将样品在23℃,50%相对湿度下至少放置24h,测量孔的中心与中心之间的距离A-B,C-D,A-C,B-D然后将样品在没有张力的情况下放置于150℃恒温箱中30min,取出在23℃,相对湿度50%下放置3h,在测量各孔之间的距离。各个方向的线性尺寸变化如下:Cut a piece of film whose traction direction (MD) is 280mm and transverse direction (TD) is 255mm, and punch out a round hole with a diameter of 1mm at each of the four corners of the film at a distance of 13mm from the edge. Place the sample at 23°C, 50% relative humidity for at least 24h, measure the distances A-B, C-D, A-C, B-D between the center of the hole and then place the sample in a thermostat at 150°C for 30min without tension, Take it out and place it at 23°C, relative humidity 50% for 3h, and then measure the distance between the holes. The linear dimension changes in each direction as follows:
(4)表中T
g/(℃)、T
5%/(℃)
(4) T g /(°C), T 5% /(°C) in the table
玻璃化转变温度T
g采用热机械法(TMA)测量
The glass transition temperature Tg is measured by thermomechanical method (TMA)
T
5%的测量根据GBT27761-2011
T 5% measured according to GBT27761-2011
实施例1Example 1
(1)在氮气保护和25℃的条件下,将0.08mol(13.93g)的4-甲基-间亚苯基二异氰酸酯和0.02mol(5g)的4,4′-亚甲基双(异氰酸苯酯)溶于装有230.86g NMP的三口烧瓶中,加入0.1mol(21.81g)的1,2,4,5-苯四甲羧酸二酐,搅拌5h,得到固含量为15%的中间产物聚酰胺酸溶液。(1) Under the condition of nitrogen protection and 25°C, 0.08mol (13.93g) of 4-methyl-m-phenylene diisocyanate and 0.02mol (5g) of 4,4'-methylenebis(iso Phenyl cyanate) was dissolved in a three-necked flask with 230.86g NMP, and 0.1mol (21.81g) of 1,2,4,5-benzenetetracarboxylic dianhydride was added and stirred for 5h to obtain a solid content of 15%. The intermediate product polyamic acid solution.
(2)将得到的聚酰胺酸溶液加入平均粒径30nm的纳米SiO
2(每100g聚酰胺酸加0.05gSiO
2),混合均匀后脱泡,脱泡后用自动涂膜机涂覆在洁净的玻璃板上,涂膜厚度为300μm,将玻璃板放置到无氧烘箱中,利用阶梯升温(升温至100℃保温30min,再升温至110℃保温30min,然后升温至120℃保温60min,再升温至140℃保温60min)热处理形成聚酰亚胺,待冷却到室温后,取出玻璃板放于沸水中,使聚酰亚胺薄膜与玻璃板分离,得到厚度为18±1μm的酰亚胺薄膜,将得到的薄膜放入反应离子刻蚀机中进行刻蚀(以氦气做保护气体,CHF3做刻蚀气体),时间1h,除去聚酰亚胺薄膜中的SiO
2成孔剂,得到多孔的聚酰亚胺薄膜。
(2) Add nano-SiO 2 with an average particle size of 30nm to the obtained polyamic acid solution (add 0.05g SiO 2 per 100g polyamic acid), mix well and then defoam. On a glass plate, the thickness of the coating film is 300 μm. Place the glass plate in an oxygen-free oven, and use a stepwise heating method (heating to 100°C for 30 minutes, then heating to 110°C for 30 minutes, then heating to 120°C for 60 minutes, and then heating to Heat treatment at 140°C for 60min) to form polyimide. After cooling to room temperature, take out the glass plate and put it in boiling water to separate the polyimide film from the glass plate to obtain an imide film with a thickness of 18±1μm. The obtained film is put into a reactive ion etching machine and etched (with helium as shielding gas, CHF3 as etching gas), time 1h, removes SiO in the polyimide film pore - forming agent, obtains porous polyimide imide film.
实施例2Example 2
(1)在氮气保护和25℃的条件下,将0.08mol(13.93g)的4-甲基-间亚苯基二异氰酸酯和0.02mol(5g)的4,4′-亚甲基双(异氰酸 苯酯)溶于装有230.86g NMP的三口烧瓶中,加入0.1mol(21.81g)的1,2,4,5-苯四甲羧酸二酐,搅拌5h,得到固含量为15%的中间产物聚酰胺酸溶液。(1) Under the condition of nitrogen protection and 25°C, 0.08mol (13.93g) of 4-methyl-m-phenylene diisocyanate and 0.02mol (5g) of 4,4'-methylenebis(iso Phenyl cyanate) was dissolved in a three-necked flask with 230.86g NMP, and 0.1mol (21.81g) of 1,2,4,5-benzenetetracarboxylic dianhydride was added and stirred for 5h to obtain a solid content of 15%. The intermediate product polyamic acid solution.
(2)将得到的聚酰胺酸溶液加入平均粒径30nm的纳米SiO
2(每100g聚酰胺酸加0.05gSiO
2),混合均匀后脱泡,脱泡后用自动涂膜机涂覆在洁净的玻璃板上,涂膜厚度为300μm,将玻璃板放置到无氧烘箱中,利用阶梯升温(升温至100℃保温30min,再升温至110℃保温30min,然后升温至120℃保温60min,再升温至140℃保温60min)热处理形成聚酰亚胺,待冷却到室温后,取出玻璃板放于沸水中,使聚酰亚胺薄膜与玻璃板分离,得到厚度为18±1μm的酰亚胺薄膜,将得到的薄膜放入氢氟酸/氟化铵(体积比为3:5)的缓冲溶液中,浸泡30min,除去聚酰亚胺薄膜中的SiO
2,得到多孔的聚酰亚胺薄膜。
(2) Add nano-SiO 2 with an average particle size of 30nm to the obtained polyamic acid solution (add 0.05g SiO 2 per 100g polyamic acid), mix well and then defoam. On a glass plate, the thickness of the coating film is 300 μm. Place the glass plate in an oxygen-free oven, and use a stepwise heating method (heating to 100°C for 30 minutes, then heating to 110°C for 30 minutes, then heating to 120°C for 60 minutes, and then heating to Heat treatment at 140°C for 60min) to form polyimide. After cooling to room temperature, take out the glass plate and put it in boiling water to separate the polyimide film from the glass plate to obtain an imide film with a thickness of 18±1μm. The obtained film was put into a buffer solution of hydrofluoric acid/ammonium fluoride (volume ratio: 3:5), soaked for 30 minutes, and SiO 2 in the polyimide film was removed to obtain a porous polyimide film.
实施例3Example 3
(1)在氮气保护和25℃的条件下,将0.08mol(13.93g)的4-甲基-间亚苯基二异氰酸酯和0.02mol(5g)的4,4′-亚甲基双(异氰酸苯酯)溶于装有230.86g NMP的三口烧瓶中,加入0.1mol(21.81g)的1,2,4,5-苯四甲羧酸二酐,搅拌5h,得到固含量为15%的中间产物聚酰胺酸溶液。(1) Under the condition of nitrogen protection and 25°C, 0.08mol (13.93g) of 4-methyl-m-phenylene diisocyanate and 0.02mol (5g) of 4,4'-methylenebis(iso Phenyl cyanate) was dissolved in a three-necked flask with 230.86g NMP, and 0.1mol (21.81g) of 1,2,4,5-benzenetetracarboxylic dianhydride was added and stirred for 5h to obtain a solid content of 15%. The intermediate product polyamic acid solution.
(2)将得到的聚酰胺酸溶液加入平均粒径5nm的纳米SiO
2(每100g聚酰胺酸加0.05gSiO
2),混合均匀后脱泡,脱泡后用自动涂膜机涂覆在洁净的玻璃板上,涂膜厚度为300μm,将玻璃板放置到无氧烘箱中,利用阶梯升温(升温至100℃保温30min,再升温至110℃保温30min,然后升温至120℃保温60min,再升温至140℃保温60min)热处理形成聚酰亚胺,待冷却到室温后,取出玻璃板放于沸水中,使聚酰亚胺薄膜与玻璃板分离,得到厚度为18±1μm的酰亚胺薄膜,将得到的薄膜放入反应离子刻蚀机中进行刻蚀(以氦气做保护气体,CHF3做刻蚀气体),时间1h,除去聚酰亚胺薄膜中的SiO
2成孔剂,得到多孔的聚酰亚胺薄膜。
(2) Add nano-SiO 2 with an average particle size of 5nm to the obtained polyamic acid solution (add 0.05gSiO 2 per 100g polyamic acid), mix well and then defoam. On a glass plate, the thickness of the coating film is 300 μm. Place the glass plate in an oxygen-free oven, and use a stepwise heating method (heating to 100°C for 30 minutes, then heating to 110°C for 30 minutes, then heating to 120°C for 60 minutes, and then heating to Heat treatment at 140°C for 60min) to form polyimide. After cooling to room temperature, take out the glass plate and put it in boiling water to separate the polyimide film from the glass plate to obtain an imide film with a thickness of 18±1μm. The obtained film is put into a reactive ion etching machine and etched (with helium as shielding gas, CHF3 as etching gas), time 1h, removes SiO in the polyimide film pore - forming agent, obtains porous polyimide imide film.
实施例4Example 4
(1)在氮气保护和25℃的条件下,将0.08mol(13.93g)的4- 甲基-间亚苯基二异氰酸酯和0.02mol(5g)的4,4′-亚甲基双(异氰酸苯酯)溶于装有230.86g NMP的三口烧瓶中,加入0.1mol(21.81g)的1,2,4,5-苯四甲羧酸二酐,搅拌5h,得到固含量为15%的中间产物聚酰胺酸溶液。(1) Under the condition of nitrogen protection and 25°C, 0.08mol (13.93g) of 4-methyl-m-phenylene diisocyanate and 0.02mol (5g) of 4,4'-methylenebis(iso Phenyl cyanate) was dissolved in a three-necked flask with 230.86g NMP, and 0.1mol (21.81g) of 1,2,4,5-benzenetetracarboxylic dianhydride was added and stirred for 5h to obtain a solid content of 15%. The intermediate product polyamic acid solution.
(2)将得到的聚酰胺酸溶液加入平均粒径45nm的纳米SiO
2(每100g聚酰胺酸加0.05gSiO
2),混合均匀后脱泡,脱泡后用自动涂膜机涂覆在洁净的玻璃板上,涂膜厚度为300μm,将玻璃板放置到无氧烘箱中,利用阶梯升温(升温至100℃保温30min,再升温至110℃保温30min,然后升温至120℃保温60min,再升温至140℃保温60min)热处理形成聚酰亚胺,待冷却到室温后,取出玻璃板放于沸水中,使聚酰亚胺薄膜与玻璃板分离,得到厚度为18±1μm的酰亚胺薄膜,将得到的薄膜放入反应离子刻蚀机中进行刻蚀(以氦气做保护气体,CHF3做刻蚀气体),时间1h,除去聚酰亚胺薄膜中的SiO
2成孔剂,得到多孔的聚酰亚胺薄膜。
(2) Add nano-SiO 2 with an average particle size of 45nm to the obtained polyamic acid solution (add 0.05gSiO 2 per 100g polyamic acid), mix well and then defoam. On a glass plate, the thickness of the coating film is 300 μm. Place the glass plate in an oxygen-free oven, and use a stepwise temperature rise (heating to 100°C for 30 minutes, then heating to 110°C for 30 minutes, then heating to 120°C for 60 minutes, and then heating to Heat treatment at 140°C for 60min) to form polyimide. After cooling to room temperature, take out the glass plate and put it in boiling water to separate the polyimide film from the glass plate to obtain an imide film with a thickness of 18±1μm. The obtained film is put into a reactive ion etching machine and etched (with helium as protective gas, CHF3 as etching gas), time 1h, removes the SiO in the polyimide film pore - forming agent, obtains porous polyimide imide film.
实施例5Example 5
(1)在氮气保护和25℃的条件下,将0.08mol(13.93g)的4-甲基-间亚苯基二异氰酸酯和0.02mol(5g)的4,4′-亚甲基双(异氰酸苯酯)溶于装有230.86g NMP的三口烧瓶中,加入0.1mol(21.81g)的1,2,4,5-苯四甲羧酸二酐,搅拌5h,得到固含量为15%的中间产物聚酰胺酸溶液。(1) Under the condition of nitrogen protection and 25°C, 0.08mol (13.93g) of 4-methyl-m-phenylene diisocyanate and 0.02mol (5g) of 4,4'-methylenebis(iso Phenyl cyanate) was dissolved in a three-necked flask with 230.86g NMP, and 0.1mol (21.81g) of 1,2,4,5-benzenetetracarboxylic dianhydride was added and stirred for 5h to obtain a solid content of 15%. The intermediate product polyamic acid solution.
(2)将得到的聚酰胺酸溶液脱泡,脱泡后用自动涂膜机涂覆在洁净的玻璃板上,涂膜厚度为300μm,将玻璃板放置到无氧烘箱中,利用阶梯升温(升温至100℃保温30min,再升温至110℃保温30min,然后升温至120℃保温60min,再升温至140℃保温60min)热处理形成聚酰亚胺,待冷却到室温后,取出玻璃板放于沸水中,使聚酰亚胺薄膜与玻璃板分离,得到厚度为18±1μm的多孔酰亚胺薄膜。(2) The obtained polyamic acid solution is degassed, and after degassing, it is coated on a clean glass plate with an automatic film coating machine, and the thickness of the coating film is 300 μm. The glass plate is placed in an oxygen-free oven, and the temperature is raised by steps ( Heat up to 100°C for 30 minutes, then heat up to 110°C for 30 minutes, then heat up to 120°C for 60 minutes, then heat up to 140°C for 60 minutes) heat treatment to form polyimide, after cooling to room temperature, take out the glass plate and put it in boiling water , the polyimide film was separated from the glass plate to obtain a porous imide film with a thickness of 18 ± 1 μm.
实施例6Example 6
(1)在氮气保护和25℃的条件下,将0.05mol(8.71g)的4-甲基-间亚苯基二异氰酸酯和0.05mol(12.51g)的4,4′-亚甲基双(异氰酸苯酯)溶于装有243.84g NMP的三口烧瓶中,加入0.1mol(21.81g) 的1,2,4,5-苯四甲羧酸二酐,搅拌5h,得到固含量为15%的中间产物聚酰胺酸溶液。(1) Under the condition of nitrogen protection and 25°C, 0.05mol (8.71g) of 4-methyl-m-phenylene diisocyanate and 0.05mol (12.51g) of 4,4'-methylenebis( Phenyl isocyanate) was dissolved in a three-necked flask with 243.84g NMP, 0.1mol (21.81g) of 1,2,4,5-benzenetetramethylene carboxylic dianhydride was added, stirred for 5h, and the solid content was 15 % intermediate product polyamic acid solution.
(2)将得到的聚酰胺酸溶液加入平均粒径30nm的纳米SiO
2(每100g聚酰胺酸加0.05gSiO
2),混合均匀后脱泡,脱泡后用自动涂膜机涂覆在洁净的玻璃板上,涂膜厚度为300μm,将玻璃板放置到无氧烘箱中,利用阶梯升温(升温至100℃保温30min,再升温至110℃保温30min,然后升温至120℃保温60min,再升温至140℃保温60min)热处理形成聚酰亚胺,待冷却到室温后,取出玻璃板放于沸水中,使聚酰亚胺薄膜与玻璃板分离,得到厚度为18±1μm的酰亚胺薄膜,将得到的薄膜放入反应离子刻蚀机中进行刻蚀(以氦气做保护气体,CHF3做刻蚀气体),时间1h,除去聚酰亚胺薄膜中的SiO
2成孔剂,得到多孔的聚酰亚胺薄膜。
(2) Add nano-SiO 2 with an average particle size of 30nm to the obtained polyamic acid solution (add 0.05g SiO 2 per 100g polyamic acid), mix well and then defoam. On a glass plate, the thickness of the coating film is 300 μm. Place the glass plate in an oxygen-free oven, and use a stepwise heating method (heating to 100°C for 30 minutes, then heating to 110°C for 30 minutes, then heating to 120°C for 60 minutes, and then heating to Heat treatment at 140°C for 60min) to form polyimide. After cooling to room temperature, take out the glass plate and put it in boiling water to separate the polyimide film from the glass plate to obtain an imide film with a thickness of 18±1μm. The obtained film is put into a reactive ion etching machine and etched (with helium as shielding gas, CHF3 as etching gas), time 1h, removes SiO in the polyimide film pore - forming agent, obtains porous polyimide imide film.
实施例7Example 7
(1)在氮气保护和25℃的条件下,将0.02mol(3.48g)的4-甲基-间亚苯基二异氰酸酯和0.08mol(20.02g)的4,4′-亚甲基双(异氰酸苯酯)溶于装有256.76g NMP的三口烧瓶中,加入0.1mol(21.81g)的1,2,4,5-苯四甲羧酸二酐,搅拌5h,得到固含量为15%的中间产物聚酰胺酸溶液。(1) Under the condition of nitrogen protection and 25°C, 0.02mol (3.48g) of 4-methyl-m-phenylene diisocyanate and 0.08mol (20.02g) of 4,4'-methylenebis( Phenyl isocyanate) was dissolved in a three-necked flask with 256.76g NMP, added 0.1mol (21.81g) of 1,2,4,5-benzenetetramethylene carboxylic acid dianhydride, stirred for 5h, and obtained a solid content of 15 % intermediate product polyamic acid solution.
(2)将得到的聚酰胺酸溶液加入平均粒径30nm的纳米SiO
2(每100g聚酰胺酸加0.05gSiO
2),混合均匀后脱泡,脱泡后用自动涂膜机涂覆在洁净的玻璃板上,涂膜厚度为300μm,将玻璃板放置到无氧烘箱中,利用阶梯升温(升温至100℃保温30min,再升温至110℃保温30min,然后升温至120℃保温60min,再升温至140℃保温60min)热处理形成聚酰亚胺,待冷却到室温后,取出玻璃板放于沸水中,使聚酰亚胺薄膜与玻璃板分离,得到厚度为18±1μm的酰亚胺薄膜,将得到的薄膜放入反应离子刻蚀机中进行刻蚀(以氦气做保护气体,CHF3做刻蚀气体),时间1h,除去聚酰亚胺薄膜中的SiO
2成孔剂,得到多孔的聚酰亚胺薄膜。
(2) Add nano-SiO 2 with an average particle size of 30nm to the obtained polyamic acid solution (add 0.05g SiO 2 per 100g polyamic acid), mix well and then defoam. On a glass plate, the thickness of the coating film is 300 μm. Place the glass plate in an oxygen-free oven, and use a stepwise heating method (heating to 100°C for 30 minutes, then heating to 110°C for 30 minutes, then heating to 120°C for 60 minutes, and then heating to Heat treatment at 140°C for 60min) to form polyimide. After cooling to room temperature, take out the glass plate and put it in boiling water to separate the polyimide film from the glass plate to obtain an imide film with a thickness of 18±1μm. The obtained film is put into a reactive ion etching machine and etched (with helium as shielding gas, CHF3 as etching gas), time 1h, removes SiO in the polyimide film pore - forming agent, obtains porous polyimide imide film.
实施例8Example 8
(1)在氮气保护和25℃的条件下,将0.03mol(5.22g)的4-甲 基-间亚苯基二异氰酸酯和0.07mol(17.52g)的4,4′-亚甲基双(异氰酸苯酯)溶于装有252.45g NMP的三口烧瓶中,加入0.1mol(21.81g)的1,2,4,5-苯四甲羧酸二酐,搅拌5h,得到固含量为15%的中间产物聚酰胺酸溶液。(1) Under the condition of nitrogen protection and 25°C, 0.03mol (5.22g) of 4-methyl-m-phenylene diisocyanate and 0.07mol (17.52g) of 4,4'-methylenebis( Phenyl isocyanate) was dissolved in a three-necked flask with 252.45g NMP, and 0.1mol (21.81g) of 1,2,4,5-benzenetetramethylcarboxylic dianhydride was added, stirred for 5h, and the solid content was 15 % intermediate product polyamic acid solution.
(2)将得到的聚酰胺酸溶液加入平均粒径30nm的纳米SiO
2(每100g聚酰胺酸加0.05gSiO
2),混合均匀后脱泡,脱泡后用自动涂膜机涂覆在洁净的玻璃板上,涂膜厚度为300μm,将玻璃板放置到无氧烘箱中,利用阶梯升温(升温至100℃保温30min,再升温至110℃保温30min,然后升温至120℃保温60min,再升温至140℃保温60min)热处理形成聚酰亚胺,待冷却到室温后,取出玻璃板放于沸水中,使聚酰亚胺薄膜与玻璃板分离,得到厚度为18±1μm的酰亚胺薄膜,将得到的薄膜放入反应离子刻蚀机中进行刻蚀(以氦气做保护气体,CHF3做刻蚀气体),时间1h,除去聚酰亚胺薄膜中的SiO
2成孔剂,得到多孔的聚酰亚胺薄膜。
(2) Add nano-SiO 2 with an average particle size of 30nm to the obtained polyamic acid solution (add 0.05g SiO 2 per 100g polyamic acid), mix well and then defoam. On a glass plate, the thickness of the coating film is 300 μm. Place the glass plate in an oxygen-free oven, and use a stepwise heating method (heating to 100°C for 30 minutes, then heating to 110°C for 30 minutes, then heating to 120°C for 60 minutes, and then heating to Heat treatment at 140°C for 60min) to form polyimide. After cooling to room temperature, take out the glass plate and put it in boiling water to separate the polyimide film from the glass plate to obtain an imide film with a thickness of 18±1μm. The obtained film is put into a reactive ion etching machine and etched (with helium as shielding gas, CHF3 as etching gas), time 1h, removes SiO in the polyimide film pore - forming agent, obtains porous polyimide imide film.
实施例9Example 9
(1)在氮气保护和25℃的条件下,将0.04mol(6.97g)的4-甲基-间亚苯基二异氰酸酯和0.06mol(15.01g)的4,4′-亚甲基双(异氰酸苯酯)溶于装有248.14g NMP的三口烧瓶中,加入0.1mol(21.81g)的1,2,4,5-苯四甲羧酸二酐,搅拌5h,得到固含量为15%的中间产物聚酰胺酸溶液。(1) Under the condition of nitrogen protection and 25°C, 0.04mol (6.97g) of 4-methyl-m-phenylene diisocyanate and 0.06mol (15.01g) of 4,4'-methylenebis( Phenyl isocyanate) was dissolved in a three-necked flask with 248.14g NMP, added 0.1mol (21.81g) of 1,2,4,5-benzenetetramethylene carboxylic acid dianhydride, stirred for 5h, and obtained a solid content of 15 % intermediate product polyamic acid solution.
(2)将得到的聚酰胺酸溶液加入平均粒径30nm的纳米SiO
2(每100g聚酰胺酸加0.05gSiO
2),混合均匀后脱泡,脱泡后用自动涂膜机涂覆在洁净的玻璃板上,涂膜厚度为300μm,将玻璃板放置到无氧烘箱中,利用阶梯升温(升温至100℃保温30min,再升温至110℃保温30min,然后升温至120℃保温60min,再升温至140℃保温60min)热处理形成聚酰亚胺,待冷却到室温后,取出玻璃板放于沸水中,使聚酰亚胺薄膜与玻璃板分离,得到厚度为18±1μm的酰亚胺薄膜,将得到的薄膜放入反应离子刻蚀机中进行刻蚀(以氦气做保护气体,CHF3做刻蚀气体),时间1h,除去聚酰亚胺薄膜中的SiO
2成孔剂,得到多孔的聚酰亚胺薄膜。
(2) Add nano-SiO 2 with an average particle size of 30nm to the obtained polyamic acid solution (add 0.05g SiO 2 per 100g polyamic acid), mix well and then defoam. On a glass plate, the thickness of the coating film is 300 μm. Place the glass plate in an oxygen-free oven, and use a stepwise heating method (heating to 100°C for 30 minutes, then heating to 110°C for 30 minutes, then heating to 120°C for 60 minutes, and then heating to Heat treatment at 140°C for 60min) to form polyimide. After cooling to room temperature, take out the glass plate and put it in boiling water to separate the polyimide film from the glass plate to obtain an imide film with a thickness of 18±1μm. The obtained film is put into a reactive ion etching machine and etched (with helium as shielding gas, CHF3 as etching gas), time 1h, removes SiO in the polyimide film pore - forming agent, obtains porous polyimide imide film.
实施例10Example 10
(1)在氮气保护和25℃的条件下,将0.06mol(10.45g)的4-甲基-间亚苯基二异氰酸酯和0.04mol(10.01g)的4,4′-亚甲基双(异氰酸苯酯)溶于装有239.53g NMP的三口烧瓶中,加入0.1mol(21.81g)的1,2,4,5-苯四甲羧酸二酐,搅拌5h,得到固含量为15%的中间产物聚酰胺酸溶液。(1) Under the condition of nitrogen protection and 25°C, 0.06mol (10.45g) of 4-methyl-m-phenylene diisocyanate and 0.04mol (10.01g) of 4,4'-methylenebis( Phenyl isocyanate) was dissolved in a three-necked flask with 239.53g NMP, and 0.1mol (21.81g) of 1,2,4,5-benzenetetramethylene carboxylic dianhydride was added, stirred for 5h, and a solid content of 15 % intermediate product polyamic acid solution.
(2)将得到的聚酰胺酸溶液加入平均粒径30nm的纳米SiO
2(每100g聚酰胺酸加0.05gSiO
2),混合均匀后脱泡,脱泡后用自动涂膜机涂覆在洁净的玻璃板上,涂膜厚度为300μm,将玻璃板放置到无氧烘箱中,利用阶梯升温(升温至100℃保温30min,再升温至110℃保温30min,然后升温至120℃保温60min,再升温至140℃保温60min)热处理形成聚酰亚胺,待冷却到室温后,取出玻璃板放于沸水中,使聚酰亚胺薄膜与玻璃板分离,得到厚度为18±1μm的酰亚胺薄膜,将得到的薄膜放入反应离子刻蚀机中进行刻蚀(以氦气做保护气体,CHF3做刻蚀气体),时间1h,除去聚酰亚胺薄膜中的SiO
2成孔剂,得到多孔的聚酰亚胺薄膜。
(2) Add nano-SiO 2 with an average particle size of 30nm to the obtained polyamic acid solution (add 0.05g SiO 2 per 100g polyamic acid), mix well and then defoam. On a glass plate, the thickness of the coating film is 300 μm. Place the glass plate in an oxygen-free oven, and use a stepwise heating method (heating to 100°C for 30 minutes, then heating to 110°C for 30 minutes, then heating to 120°C for 60 minutes, and then heating to Heat treatment at 140°C for 60min) to form polyimide. After cooling to room temperature, take out the glass plate and put it in boiling water to separate the polyimide film from the glass plate to obtain an imide film with a thickness of 18±1μm. The obtained film is put into a reactive ion etching machine and etched (with helium as shielding gas, CHF3 as etching gas), time 1h, removes SiO in the polyimide film pore - forming agent, obtains porous polyimide imide film.
实施例11Example 11
(1)在氮气保护和25℃的条件下,将0.08mol(13.93g)的4-甲基-间亚苯基二异氰酸酯和0.02mol(5g)的4,4′-亚甲基双(异氰酸苯酯)溶于装有230.86g NMP的三口烧瓶中,加入0.1mol(21.81g)的1,2,4,5-苯四甲羧酸二酐,搅拌5h,得到固含量为15%的中间产物聚酰胺酸溶液。(1) Under the condition of nitrogen protection and 25°C, 0.08mol (13.93g) of 4-methyl-m-phenylene diisocyanate and 0.02mol (5g) of 4,4'-methylenebis(iso Phenyl cyanate) was dissolved in a three-necked flask with 230.86g NMP, and 0.1mol (21.81g) of 1,2,4,5-benzenetetracarboxylic dianhydride was added and stirred for 5h to obtain a solid content of 15%. The intermediate product polyamic acid solution.
(2)将得到的聚酰胺酸溶液加入平均粒径30nm的纳米SiO
2(每100g聚酰胺酸加0.05gSiO
2),混合均匀后脱泡,脱泡后用自动涂膜机涂覆在洁净的玻璃板上,涂膜厚度为300μm,将玻璃板放置到无氧烘箱中,120℃保持2h,热处理形成聚酰亚胺,待冷却到室温后,取出玻璃板放于沸水中,使聚酰亚胺薄膜与玻璃板分离,得到厚度为18±1μm的酰亚胺薄膜,将得到的薄膜放入反应离子刻蚀机中进行刻蚀(以氦气做保护气体,CHF3做刻蚀气体),时间1h,除去聚酰亚胺薄膜中的SiO
2成孔剂,得到多孔的聚酰亚胺薄膜。
(2) Add nano-SiO 2 with an average particle size of 30nm to the obtained polyamic acid solution (add 0.05g SiO 2 per 100g polyamic acid), mix well and then defoam. On a glass plate, the thickness of the coating film is 300 μm. Place the glass plate in an oxygen-free oven, keep it at 120°C for 2 hours, and heat-treat it to form polyimide. After cooling to room temperature, take out the glass plate and put it in boiling water to make the polyimide The amine film is separated from the glass plate to obtain an imide film with a thickness of 18±1 μm, and the obtained film is placed in a reactive ion etching machine for etching (helium is used as the protective gas, CHF3 is used as the etching gas), and the time 1h, remove the SiO2 porogen in the polyimide film to obtain a porous polyimide film.
对比例1Comparative example 1
(1)在氮气保护和25℃的条件下,将0.1mol(21.81g)的1,2,4,5-苯四甲羧酸二酐溶于装有237.04g NMP的三口烧瓶中,加入0.1mol(20.02g)的1-氨基十八烷,搅拌反应5h,得到固含量为15%的中间产物聚酰胺酸溶液。(1) Under the condition of nitrogen protection and 25°C, dissolve 0.1mol (21.81g) of 1,2,4,5-benzenetetramethylcarboxylic dianhydride in a three-necked flask containing 237.04g of NMP, and add 0.1 mol (20.02 g) of 1-aminooctadecane was stirred and reacted for 5 h to obtain an intermediate polyamic acid solution with a solid content of 15%.
(2)将得到的聚酰胺酸溶液进行脱泡,脱泡后用自动涂膜机涂覆在洁净的玻璃板上,涂膜厚度为300μm,将玻璃板放置于烘箱中,以1℃/min的速度升温至175℃,保温30min,除去溶剂DMF。冷却到室温后放置到无氧烘箱中,利用阶梯升温(升温至200℃保温30min,再升温至280℃保温10min,然后升温至320℃保温5min,再升温至370℃保温3min,最后升温至400℃保温1min)热亚胺化成聚酰亚胺,待冷却到室温后,取出玻璃板放于沸水中,使聚酰亚胺薄膜与玻璃板分离,得到厚度为18±1μm的聚酰亚胺薄膜。(2) The obtained polyamic acid solution is defoamed, and after defoaming, it is coated on a clean glass plate with an automatic film coating machine. The thickness of the coating film is 300 μm. The temperature was raised to 175°C at a high speed, kept for 30 minutes, and the solvent DMF was removed. After cooling to room temperature, place it in an oxygen-free oven, and use stepwise heating (heating to 200°C for 30 minutes, then heating to 280°C for 10 minutes, then raising the temperature to 320°C for 5 minutes, then raising the temperature to 370°C for 3 minutes, and finally raising the temperature to 400°C ℃ heat preservation 1min) thermal imidization into polyimide, after cooling to room temperature, take out the glass plate and put it in boiling water to separate the polyimide film from the glass plate to obtain a polyimide film with a thickness of 18±1μm .
对比例2Comparative example 2
(1)在氮气保护和25℃的条件下,将0.1mol(21.81g)的1,2,4,5-苯四甲羧酸二酐溶于装有237.04g NMP的三口烧瓶中,投入0.1mol(10.81g)的1,4-苯二胺,搅拌5h,得到固含量为15%的中间产物聚酰胺酸溶液。(1) Under the condition of nitrogen protection and 25°C, dissolve 0.1mol (21.81g) of 1,2,4,5-benzenetetramethylcarboxylic dianhydride in a three-necked flask containing 237.04g of NMP, and put 0.1 mol (10.81 g) of 1,4-phenylenediamine was stirred for 5 h to obtain an intermediate polyamic acid solution with a solid content of 15%.
(2)将得到的聚酰胺酸溶液加入平均粒径30nm的纳米SiO
2(每100g聚酰胺酸加0.05gSiO
2),混合均匀后脱泡,脱泡后用自动涂膜机涂覆在洁净的玻璃板上,涂膜厚度为300μm,将玻璃板放置到无氧烘箱中,130℃热处理形成聚酰亚胺,待冷却到室温后,取出玻璃板放于沸水中,使聚酰亚胺薄膜与玻璃板分离,得到厚度为18±1μm的酰亚胺薄膜,将得到的薄膜放入反应离子刻蚀机中进行刻蚀(以氦气做保护气体,CHF3做刻蚀气体),时间1h,除去聚酰亚胺薄膜中的SiO
2成孔剂,得到多孔的聚酰亚胺薄膜。
(2) Add nano-SiO 2 with an average particle size of 30nm to the obtained polyamic acid solution (add 0.05g SiO 2 per 100g polyamic acid), mix well and then defoam. On a glass plate, the thickness of the coating film is 300 μm. Place the glass plate in an oxygen-free oven and heat-treat at 130°C to form polyimide. After cooling to room temperature, take out the glass plate and place it in boiling water to make the polyimide film and Separate the glass plate to obtain an imide film with a thickness of 18±1 μm, put the obtained film into a reactive ion etching machine for etching (using helium as the protective gas and CHF3 as the etching gas) for 1 hour, remove SiO2 porogen in polyimide film to obtain porous polyimide film.
对比例3Comparative example 3
(1)在氮气保护和25℃的条件下,将0.08mol(13.93g)的4-甲基-间亚苯基二异氰酸酯和0.02mol(5g)的4,4′-亚甲基双(异氰酸苯酯)溶于装有230.86g NMP的三口烧瓶中,加入0.1mol(21.81g) 的1,2,4,5-苯四甲羧酸二酐,搅拌5h,得到固含量为15%的中间产物聚酰胺酸溶液。(1) Under the condition of nitrogen protection and 25°C, 0.08mol (13.93g) of 4-methyl-m-phenylene diisocyanate and 0.02mol (5g) of 4,4'-methylenebis(iso Phenyl cyanate) was dissolved in a three-necked flask with 230.86g NMP, and 0.1mol (21.81g) of 1,2,4,5-benzenetetramethylene carboxylic dianhydride was added, stirred for 5h to obtain a solid content of 15%. The intermediate product polyamic acid solution.
(2)将得到的聚酰胺酸溶液加入平均粒径30nm的纳米SiO
2(每100g聚酰胺酸加0.05gSiO
2),混合均匀后脱泡,脱泡后用自动涂膜机涂覆在洁净的玻璃板上,涂膜厚度为300μm,将玻璃板放置到无氧烘箱中,利用阶梯升温(升温至100℃保温30min,再升温至110℃保温30min,然后升温至120℃保温60min,再升温至140℃保温60min)热处理形成聚酰亚胺,待冷却到室温后,取出玻璃板放于沸水中,使聚酰亚胺薄膜与玻璃板分离,得到厚度为18±1μm的酰亚胺薄膜。表1实施例1~11与对比例1~3制备的聚酰亚胺薄膜性能对比
(2) Add nano-SiO 2 with an average particle size of 30nm to the obtained polyamic acid solution (add 0.05g SiO 2 per 100g polyamic acid), mix well and then defoam. On a glass plate, the thickness of the coating film is 300 μm. Place the glass plate in an oxygen-free oven, and use a stepwise heating method (heating to 100°C for 30 minutes, then heating to 110°C for 30 minutes, then heating to 120°C for 60 minutes, and then heating to Heat treatment at 140°C for 60 minutes) to form polyimide. After cooling to room temperature, take out the glass plate and put it in boiling water to separate the polyimide film from the glass plate to obtain an imide film with a thickness of 18±1 μm. Table 1 embodiment 1~11 and the polyimide film property contrast prepared by comparative example 1~3
可以看出,相比于对比例1-3,本公开实施1-11制备的聚酰亚胺多孔膜形成的孔隙率更高,从而获得同时具有更低介电常数、更加均匀的孔隙分布、更高的热稳定性好、更高的尺寸稳定性的高性能聚酰亚胺多孔膜。It can be seen that, compared with Comparative Examples 1-3, the polyimide porous membrane prepared by Implementation 1-11 of the present disclosure has a higher porosity, thereby obtaining a lower dielectric constant and a more uniform pore distribution, A high-performance polyimide porous membrane with higher thermal stability and higher dimensional stability.
同时,本公开实施例的4-甲基-间亚苯基二异氰酸酯、4,4′-亚甲基双(异氰酸苯酯)、1,2,4,5-苯四甲羧酸二酐的摩尔比为80:20:100,加入平均粒径为30nm的SiO
2(100g聚酰胺酸加0.05gSiO
2),采用反应离子刻蚀机刻蚀后得到的多孔聚酰亚胺薄膜可以进一步提高聚酰 亚胺多孔膜的的热稳定性、尺寸稳定性,更高的孔隙率以及进一步降低介电常数。
At the same time, 4-methyl-m-phenylene diisocyanate, 4,4'-methylene bis(phenylisocyanate), 1,2,4,5-benzenetetramethylcarboxylic acid diisocyanate, The molar ratio of anhydride is 80:20:100, adding SiO 2 (100g polyamic acid plus 0.05gSiO 2 ) with an average particle diameter of 30nm, and the porous polyimide film obtained after etching by reactive ion etching machine can be further Improve the thermal stability, dimensional stability, higher porosity and further reduce the dielectric constant of the polyimide porous membrane.
以上涉及到公知常识的内容不作详细描述,本领域的技术人员能够理解。The above content related to common knowledge will not be described in detail, and those skilled in the art can understand it.
以上所述仅为本公开的一些实施例而已,并不用以限制本公开,凡在本公开的精神和原则之内,所作的任何修改、等同替换、改进等,均应包含在本公开的保护范围之内。本项公开的技术性范围并不局限于说明书上的内容,必须要根据权利要求范围来确定其技术性范围。The above descriptions are only some embodiments of the present disclosure, and are not intended to limit the present disclosure. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principles of the present disclosure shall be included in the protection of the present disclosure. within range. The technical scope of this disclosure is not limited to the content in the specification, and its technical scope must be determined according to the scope of the claims.
本公开提供了聚酰亚胺多孔膜及其制备方法和用途,本公开制备的聚酰亚胺多孔膜,具有高孔隙率、低介电常数、孔隙分布均匀、热稳定性好、尺寸稳定性好等高性能,可广泛应用于介电材料领域,具有优异的工业应用价值和广阔的市场前景。The disclosure provides a polyimide porous membrane and its preparation method and application. The polyimide porous membrane prepared by the disclosure has high porosity, low dielectric constant, uniform pore distribution, good thermal stability, and dimensional stability. Good and high performance, can be widely used in the field of dielectric materials, has excellent industrial application value and broad market prospects.
Claims (16)
- 一种聚酰亚胺多孔膜的制备方法,其特征在于:将两种不同的芳族二异氰酸酯溶于溶剂中,再加入芳族二酐,搅拌得中间产物聚酰胺酸,将聚酰胺酸进行脱泡涂覆,后进行热处理,得到所述聚酰亚胺多孔膜。A kind of preparation method of polyimide porous membrane, it is characterized in that: dissolving two kinds of different aromatic diisocyanates in solvent, add aromatic dianhydride again, stir to obtain intermediate product polyamic acid, polyamic acid is carried out defoaming coating, followed by heat treatment to obtain the polyimide porous membrane.
- 根据权利要求1所述的聚酰亚胺多孔膜的制备方法,其特征在于:在得到中间产物聚酰胺酸后,再加入成孔剂进行混合,后脱泡涂覆,再进行热处理,最后除去成孔剂即得到所述聚酰亚胺多孔膜。The preparation method of polyimide porous membrane according to claim 1, is characterized in that: after obtaining intermediate product polyamic acid, then add pore-forming agent and mix, rear defoaming coating, then carry out heat treatment, finally remove The pore-forming agent obtains the polyimide porous membrane.
- 根据权利要求1或2所述的聚酰亚胺多孔膜的制备方法,其特征在于:所述芳族二异氰酸酯选自4-甲基-间亚苯基二异氰酸酯、2,6-甲苯二异氰酸酯、4,4′-亚甲基双(异氰酸苯酯)、2,4,6-三甲基-1,3-苯二异氰酸酯或2,3,5,6-四甲基-1,4-苯二异氰酸酯中的一种;所述芳族二酐选自3,4,3’,4’-二苯甲酮四羧酸二酐、1,2,4,5-苯四甲羧酸二酐、3,4,3’,4’-联苯基四羧酸二酐中的一种。The preparation method of polyimide porous membrane according to claim 1 or 2, is characterized in that: described aromatic diisocyanate is selected from 4-methyl-m-phenylene diisocyanate, 2,6-toluene diisocyanate , 4,4′-methylenebis(phenylisocyanate), 2,4,6-trimethyl-1,3-benzenediisocyanate or 2,3,5,6-tetramethyl-1, One of 4-phenylene diisocyanates; the aromatic dianhydride is selected from 3,4,3',4'-benzophenone tetracarboxylic dianhydride, 1,2,4,5-benzenetetramethylcarboxylate One of acid dianhydride and 3,4,3',4'-biphenyltetracarboxylic dianhydride.
- 根据权利要求1-3中任一项所述的聚酰亚胺多孔膜的制备方法,其特征在于:所述溶剂选自N,N-二甲基甲酰胺、N,N-二甲基乙酰胺、N-甲基吡咯烷酮中的一种或几种。According to the preparation method of polyimide porous membrane according to any one of claims 1-3, it is characterized in that: the solvent is selected from N,N-dimethylformamide, N,N-dimethylacetamide One or more of amides and N-methylpyrrolidone.
- 根据权利要求1-4中任一项所述的聚酰亚胺多孔膜的制备方法,其特征在于:所述成孔剂选自SiO 2,陶瓷,铝粉,镁粉中的一种或几种。 According to the preparation method of polyimide porous membrane according to any one of claims 1-4, it is characterized in that: the pore-forming agent is selected from one or more of SiO 2 , ceramics, aluminum powder, and magnesium powder. kind.
- 根据权利要求1-5中任一项所述的聚酰亚胺多孔膜的制备方法,其特征在于:两种不同的芳族二异氰酸酯与芳族二酐共聚反应条件为在氮气保护和0~40℃温度下。According to the preparation method of polyimide porous membrane described in any one in the claim 1-5, it is characterized in that: two kinds of different aromatic diisocyanates and aromatic dianhydride copolymerization reaction conditions are under nitrogen protection and 0~ 40°C temperature.
- 根据权利要求1-6中任一项所述的聚酰亚胺多孔膜的制备方法,其特征在于:两种不同的芳族二异氰酸酯与芳族二酐充分搅拌得到中间产物聚酰胺酸,所述聚酰胺酸的固含量在13~16wt%之间。According to the preparation method of the polyimide porous membrane described in any one in claim 1-6, it is characterized in that: two kinds of different aromatic diisocyanates and aromatic dianhydride are fully stirred to obtain intermediate product polyamic acid, so The solid content of the polyamic acid is between 13 and 16 wt%.
- 根据权利要求1-7中任一项所述的聚酰亚胺多孔膜的制备方法,其特征在于:所述热处理采用阶梯升温。The method for preparing a polyimide porous membrane according to any one of claims 1-7, characterized in that: the heat treatment adopts stepwise temperature rise.
- 根据权利要求3所述的聚酰亚胺多孔膜的制备方法,其特征在于:两种不同的芳族二异氰酸酯为4,4′-亚甲基双(异氰酸苯酯)和4-甲 基-间亚苯基二异氰酸酯;所述芳族二酐为1,2,4,5-苯四甲羧酸二酐。The preparation method of polyimide porous membrane according to claim 3, is characterized in that: two kinds of different aromatic diisocyanates are 4,4'-methylene bis(phenylisocyanate) and 4-methyl Base-m-phenylene diisocyanate; the aromatic dianhydride is 1,2,4,5-benzenetetramethanecarboxylic dianhydride.
- 根据权利要求9所述的聚酰亚胺多孔膜的制备方法,其特征在于:所述4,4′-亚甲基双(异氰酸苯酯)、4-甲基-间亚苯基二异氰酸酯摩尔量之和与1,2,4,5-苯四甲羧酸二酐的摩尔比为1:1。The preparation method of polyimide porous membrane according to claim 9, is characterized in that: the 4,4'-methylenebis(phenylisocyanate), 4-methyl-m-phenylenebis The molar ratio of the sum of molar amounts of isocyanate to 1,2,4,5-benzenetetracarboxylic dianhydride is 1:1.
- 根据权利要求9或10所述的聚酰亚胺多孔膜的制备方法,其特征在于:所述4,4′-亚甲基双(异氰酸苯酯)的投料摩尔量小于4-甲基-间亚苯基二异氰酸酯的投料摩尔量。The preparation method of polyimide porous membrane according to claim 9 or 10, characterized in that: the molar amount of the 4,4'-methylene bis(phenylisocyanate) is less than 4-methyl -The feeding molar amount of m-phenylene diisocyanate.
- 根据权利要求5所述的聚酰亚胺多孔膜的制备方法,其特征在于:所述成孔剂为SiO 2,所述SiO 2为纳米级SiO 2。 The preparation method of the polyimide porous membrane according to claim 5, characterized in that: the pore-forming agent is SiO 2 , and the SiO 2 is nano-scale SiO 2 .
- 根据权利要求12所述的聚酰亚胺多孔膜的制备方法,其特征在于:所述纳米级SiO 2的平均粒径为5~45nm。 The preparation method of polyimide porous membrane according to claim 12, characterized in that: the average particle diameter of the nano-scale SiO 2 is 5-45nm.
- 一种聚酰亚胺多孔膜,其特征在于:是由权利要求1~13中任一项所述的制备方法制得。A polyimide porous membrane, characterized in that it is produced by the preparation method described in any one of claims 1-13.
- 根据权利要求14所述的酰亚胺多孔膜,其特征在于:所述聚酰亚胺多孔膜满足以下特征(1)至(3)中的至少一种:The porous imide membrane according to claim 14, wherein the porous polyimide membrane satisfies at least one of the following features (1) to (3):(1)所述聚酰亚胺多孔膜的介电常数为1.45~1.98;(1) The dielectric constant of the polyimide porous membrane is 1.45~1.98;(2)所述聚酰亚胺多孔膜的孔隙率为73~79%;(2) The porosity of the polyimide porous membrane is 73% to 79%;(3)所述聚酰亚胺多孔膜150℃下MD方向热收缩为0.25~0.28%,TD方向热收缩为0.25~0.30%。(3) The thermal shrinkage of the polyimide porous membrane at 150°C is 0.25-0.28% in the MD direction, and 0.25-0.30% in the TD direction.
- 如权利要求14或15所述的酰亚胺多孔膜在介电材料中的用途。The use of the imide porous film as claimed in claim 14 or 15 in dielectric materials.
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