WO2022229173A3 - Rf microswitch with trench capacitor - Google Patents

Rf microswitch with trench capacitor Download PDF

Info

Publication number
WO2022229173A3
WO2022229173A3 PCT/EP2022/061034 EP2022061034W WO2022229173A3 WO 2022229173 A3 WO2022229173 A3 WO 2022229173A3 EP 2022061034 W EP2022061034 W EP 2022061034W WO 2022229173 A3 WO2022229173 A3 WO 2022229173A3
Authority
WO
WIPO (PCT)
Prior art keywords
line
membrane
capacitor
stack
metal layer
Prior art date
Application number
PCT/EP2022/061034
Other languages
French (fr)
Other versions
WO2022229173A2 (en
Inventor
Etienne EUSTACHE
José Paolo MARTINS
Matthieu Le Baillif
Shailendra Bansropun
Afshin Ziaei
Original Assignee
Thales
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thales filed Critical Thales
Priority to EP22725493.5A priority Critical patent/EP4330996A2/en
Publication of WO2022229173A2 publication Critical patent/WO2022229173A2/en
Publication of WO2022229173A3 publication Critical patent/WO2022229173A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G5/00—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture
    • H01G5/16—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture using variation of distance between electrodes
    • H01G5/18—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture using variation of distance between electrodes due to change in inclination, e.g. by flexing, by spiral wrapping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G5/00—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture
    • H01G5/16—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture using variation of distance between electrodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Electronic Switches (AREA)

Abstract

The invention relates to a capacitive radiofrequency electromechanical microsystem comprising a metal membrane (10) suspended above an RF transmission line (30) covered with a stack that includes at least a first dielectric layer (31) and a metal layer (32), wherein said membrane is supported by means of two arms (20a, 20b) on ground planes above a substrate (40) and can be controlled so as to move: • from a so-called high position, separating the membrane by a gap above the RF line covered with the stack and defining a first capacitor (CUP), to • a so-called low position, in which the membrane is in contact with the RF line (30) via the metal layer (32) of the stack covering the RF line so as to define a second capacitor (CDOWN), characterised in that the RF line (30), the first dielectric layer (31) and the metal layer (32) have a three-dimensional structure, that is to say in relief, such as to define a three-dimensional capacitor of the MIM type or trench capacitor.
PCT/EP2022/061034 2021-04-29 2022-04-26 Rf microswitch with structured capacitor WO2022229173A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP22725493.5A EP4330996A2 (en) 2021-04-29 2022-04-26 Rf microswitch with trench capacitor

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FRFR2104463 2021-04-29
FR2104463A FR3122415A1 (en) 2021-04-29 2021-04-29 Structured Capacitance RF Micro Switch

Publications (2)

Publication Number Publication Date
WO2022229173A2 WO2022229173A2 (en) 2022-11-03
WO2022229173A3 true WO2022229173A3 (en) 2023-01-05

Family

ID=78212154

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2022/061034 WO2022229173A2 (en) 2021-04-29 2022-04-26 Rf microswitch with structured capacitor

Country Status (3)

Country Link
EP (1) EP4330996A2 (en)
FR (1) FR3122415A1 (en)
WO (1) WO2022229173A2 (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1502273A1 (en) * 2002-05-07 2005-02-02 Raytheon Company Micro-electro-mechanical switch, and methods of making and using it.
US20060001124A1 (en) * 2004-07-02 2006-01-05 Georgia Tech Research Corporation Low-loss substrate for high quality components
US20070176715A1 (en) * 2006-02-02 2007-08-02 Matsushita Electric Industrial Co., Ltd. Electromechanical switch

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4688063A (en) 1984-06-29 1987-08-18 International Business Machines Corporation Dynamic ram cell with MOS trench capacitor in CMOS
US5354701A (en) 1991-04-18 1994-10-11 Industrial Technology Research Institute Doubled stacked trench capacitor DRAM and method of fabricating
US6613641B1 (en) 2001-01-17 2003-09-02 International Business Machines Corporation Production of metal insulator metal (MIM) structures using anodizing process
FR2884646B1 (en) 2005-04-19 2007-09-14 St Microelectronics Sa METHOD FOR MANUFACTURING AN INTEGRATED CIRCUIT COMPRISING A THREE DIMENSIONAL CAPACITOR

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1502273A1 (en) * 2002-05-07 2005-02-02 Raytheon Company Micro-electro-mechanical switch, and methods of making and using it.
US20060001124A1 (en) * 2004-07-02 2006-01-05 Georgia Tech Research Corporation Low-loss substrate for high quality components
US20070176715A1 (en) * 2006-02-02 2007-08-02 Matsushita Electric Industrial Co., Ltd. Electromechanical switch

Also Published As

Publication number Publication date
WO2022229173A2 (en) 2022-11-03
EP4330996A2 (en) 2024-03-06
FR3122415A1 (en) 2022-11-04

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