WO2022228217A1 - Structure de pixel à oled, panneau d'affichage et dispositif électronique - Google Patents

Structure de pixel à oled, panneau d'affichage et dispositif électronique Download PDF

Info

Publication number
WO2022228217A1
WO2022228217A1 PCT/CN2022/087741 CN2022087741W WO2022228217A1 WO 2022228217 A1 WO2022228217 A1 WO 2022228217A1 CN 2022087741 W CN2022087741 W CN 2022087741W WO 2022228217 A1 WO2022228217 A1 WO 2022228217A1
Authority
WO
WIPO (PCT)
Prior art keywords
light
sub
organic
pixel
layer
Prior art date
Application number
PCT/CN2022/087741
Other languages
English (en)
Chinese (zh)
Inventor
王煦
戴雷
蔡丽菲
Original Assignee
广东阿格蕾雅光电材料有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 广东阿格蕾雅光电材料有限公司 filed Critical 广东阿格蕾雅光电材料有限公司
Publication of WO2022228217A1 publication Critical patent/WO2022228217A1/fr

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass

Definitions

  • the present application relates to the technical field of display panels, and in particular, to an OLED pixel structure, a display panel using the OLED pixel structure, and an electronic device using the display panel.
  • the fingerprint identification module is generally arranged below the screen and has a fixed position. That is to say, the fingerprint recognition operation can only be performed when the user's finger pulp is placed on a specific area of the screen surface. In this way, it is not conducive to realizing full-screen fingerprint recognition with a higher degree of freedom, and the use is not convenient enough.
  • the main purpose of the present application is to provide an OLED pixel structure, a display panel using the OLED pixel structure, and an electronic device using the display panel, aiming to improve the convenience of use of the screen of the electronic device.
  • An embodiment of the present application provides an OLED pixel structure, the OLED pixel structure includes at least three sub-pixels; wherein, at least one sub-pixel is a light-detecting sub-pixel; the light-detecting sub-pixel has a light-emitting mode and a light-detecting mode, the The organic photoelectric device in the photodetection sub-pixel constitutes an organic light emitting diode in the light emission mode, and constitutes an organic photodetector in the photodetection mode.
  • the light detection sub-pixel includes an anode, a cathode, and an active-light-emitting layer sandwiched between the anode and the cathode, and the active-light-emitting layer has a light-emitting state and a detection state;
  • the active-light-emitting layer in response to the fact that the potential of the anode is higher than the potential of the cathode, the active-light-emitting layer is in a light-emitting state, and the organic optoelectronic device in the photodetection sub-pixel constitutes an organic light-emitting diode; in response to the potential of the anode being lower than that of the cathode In the case of electric potential, the active-emitting layer is in a detection state, and the organic optoelectronic devices in the photodetection sub-pixels constitute an organic photodetector.
  • the active-light-emitting layer includes a first organic compound, a second organic compound, and a third organic compound;
  • the first organic matter is selected from organic matter with hole transport properties
  • the second organic matter is selected from organic matter with electron transport properties
  • the third organic matter is selected from organic matter capable of converting singlet energy into fluorescence or capable of converting triplet energy Organic matter that converts state energy to phosphorescence;
  • the absolute value of the energy of the highest occupied orbital of the first organic substance is not greater than the absolute value of the energy of the highest occupied orbital of the second organic substance;
  • the absolute value of the energy of the lowest unoccupied orbital of the first organic matter is not greater than the absolute value of the energy of the lowest unoccupied orbital of the second organic matter
  • the second organic substance is selected from organic substances having both hole transport properties and electron transport properties.
  • the second organic substance is a thermally activated delayed fluorescent material.
  • the light detection sub-pixel further includes a first functional layer sandwiched between the anode and the active-light-emitting layer;
  • the light detection sub-pixel further includes a second functional layer sandwiched between the active-light emitting layer and the cathode.
  • the first functional layer when the light detection sub-pixel includes a first functional layer, includes a hole injection layer, a hole transport layer, and an electron blocking layer;
  • the second functional layer includes a hole blocking layer, an electron transport layer, and an electron injection layer.
  • At least one subpixel is a light source subpixel, and the absorption spectrum of the light detection subpixel and the emission spectrum of the light source subpixel overlap.
  • An embodiment of the present application provides a display panel, the display panel includes an OLED pixel structure, and the OLED pixel structure includes at least three sub-pixels; wherein, at least one sub-pixel is a light-detecting sub-pixel; the light-detecting sub-pixel has a light-emitting mode and light detection mode, the organic photoelectric device in the light detection sub-pixel constitutes an organic light emitting diode in the light emission mode, and constitutes an organic photodetector in the light detection mode.
  • An embodiment of the present application provides an electronic device, the electronic device includes a display panel, the display panel includes an OLED pixel structure, and the OLED pixel structure includes at least three sub-pixels; wherein, at least one sub-pixel is a light detection sub-pixel;
  • the light detection sub-pixel has a light-emitting mode and a light-detection mode, and the organic optoelectronic device in the light-detection sub-pixel constitutes an organic light-emitting diode in the light-emitting mode, and constitutes an organic photodetector in the light-detection mode.
  • the OLED pixel structure has two modes—display mode and detection mode.
  • the display mode the three sub-pixels in the OLED pixel structure can respectively emit light of different colors to form the three primary colors of the display panel; at this time, the OLED pixel structure proposed in this application has the same function as the OLED pixel structure in the usual sense.
  • the detection mode the OLED pixel structure proposed in this application is quite different from the OLED pixel structure in the usual sense, namely:
  • At least one sub-pixel has two modes—light-emitting mode and light-detection mode; in the light-emitting mode, the sub-pixel emits light normally to form the three primary colors of the display panel; in the light-detection mode, when an external object is placed on the surface of the display panel At this time, the light reflected by the external object is accepted by the sub-pixel, and forms a photo-generated current, which is read into the IC for signal processing.
  • OLED pixel structure is applied to a display panel, a number of OLED pixel structures arranged in an array can perform a continuum on the surface of an external object according to the topography of the object surface, according to different intensities of reflected light, and according to different sizes of photo-generated currents. Imaging can be applied to fingerprint recognition, image recognition, face recognition, blood sample pulse monitoring and other fields, so that electronic equipment can obtain full-screen light detection function, which enriches the functions of electronic equipment screen and improves the convenience of use.
  • a sub-pixel can not only serve as a component with a display function, but also as a component with a light detection function, and also realizes the integration of functions without occupying the space of additional sub-pixels, thereby avoiding the resolution of the display panel. adverse effects, to avoid adverse effects on the brightness of the display panel.
  • the light detection function and the light emitting function of the present application are concentrated in the same layer, which can also reduce the light entering and leaving the back. signal attenuation caused by the board.
  • the preparation process of the OLED pixel structure proposed in the present application is the same as the preparation process of the OLED pixel structure in the general sense, and the risk of reducing the yield caused by increasing the process is also avoided.
  • FIG. 1 is a schematic structural diagram of a standard RGB arrangement according to an embodiment of the OLED pixel structure of the present application
  • FIG. 2 is a schematic structural diagram of a pentile arrangement according to an embodiment of the OLED pixel structure of the present application
  • FIG. 3 is a schematic diagram of the internal structure of an embodiment of the OLED pixel structure of the present application.
  • FIG. 4 is a schematic structural diagram of an organic optoelectronic device in the photodetection sub-pixel in FIG. 3;
  • FIG. 5 is a schematic diagram of the energy level design of the donor-acceptor in the active-emitting layer in FIG. 4 .
  • label name label name 100 OLED pixel structure 153 organic material layer 10a Light detection sub-pixel 1531 hole injection layer 10b Light source sub-pixel 1532 hole transport layer 10c Pure display sub-pixels 1533 electron blocking layer 11 base 1534 active-emissive layer
  • the fingerprint identification module thereof is generally disposed below the screen, and the position is fixed. That is to say, the fingerprint recognition operation can only be performed when the user's finger pulp is placed on a specific area of the screen surface. In this way, it is not conducive to realizing full-screen fingerprint recognition with a higher degree of freedom, and the use is not convenient enough.
  • the present application proposes an OLED pixel structure, which can be applied to a display panel, and the display panel can be applied to an electronic device, thereby improving the convenience of use of the screen of the electronic device.
  • the electronic device can be, but is not limited to, a mobile phone, a tablet computer, a television, a monitor, a notebook computer, a digital photo frame, a Personal Digital Assistant (PDA), an e-book reader, MP3 (Motion Picture Expert Compression) Standard audio level 3, Moving Picture Experts Group Audio Layer III) player, MP4 (moving image expert compression standard audio level 4, Moving Picture Experts Group Audio Layer IV) player, wearable device, navigator, handheld game console, etc.
  • PDA Personal Digital Assistant
  • FIG. 1 is a schematic structural diagram of an OLED pixel structure 100 according to an embodiment of the present application using a standard RGB arrangement; in this embodiment, the OLED pixel structure 100 includes at least three sub-pixels; wherein, at least one sub-pixel is Light detection sub-pixel 10a; the light detection sub-pixel 10a has a light-emitting mode and a light-detection mode, and the organic optoelectronic device 15 in the light-detection sub-pixel 10a constitutes an organic light-emitting diode in the light-emitting mode, and constitutes an organic photoelectric device in the light-detection mode. detector.
  • Light detection sub-pixel 10a the light detection sub-pixel 10a has a light-emitting mode and a light-detection mode
  • the organic optoelectronic device 15 in the light-detection sub-pixel 10a constitutes an organic light-emitting diode in the light-emitting mode, and constitutes an organic photoelectric device in
  • the organic photoelectric device 15 therein can act as an organic light-emitting diode in the light-emitting mode, and the emitted light can be used as one of the three primary colors required for display by the display panel;
  • the optoelectronic device 15 can also act as an organic photodetector in the light detection mode, and absorb the light directed towards itself, so as to realize the light detection function.
  • the sub-pixels included in the OLED pixel structure 100 can also be of the following two types:
  • the light source sub-pixel 10b only has a light-emitting mode, and the organic optoelectronic device 15 in it only acts as an organic light-emitting diode; it should be noted that the light emitted by the organic opto-electronic device 15 in the light source sub-pixel 10b in the light-emitting mode can not only be used for display
  • the panel displays one of the three primary colors required, and can also be absorbed by the photodetection sub-pixel 10a in the photodetection mode for generating photogenerated current;
  • the pure display sub-pixel 10c only has a light-emitting mode, and the organic optoelectronic device 15 in it only acts as an organic light emitting diode; different from the light source sub-pixel 10b, the organic optoelectronic device 15 in the pure display sub-pixel 10c emits light in the light-emitting mode It can only be used as one of the three primary colors required for display panel display.
  • the technical solution of this embodiment can be interpreted as: in the OLED pixel structure 100, there are at least three sub-pixels; among them, at least one sub-pixel is the light detection sub-pixel 10a; the remaining sub-pixels have the following situations: ( 1) All are light source sub-pixels 10b; (2) All are pure display sub-pixels 10c; (3) All are light-detection sub-pixels 10a: (4) Some are light source sub-pixels 10b, and some are pure display sub-pixels 10c, the last part is the light detection sub-pixel 10a; (5) a part is the light source sub-pixel 10b, and the remaining part is the pure display sub-pixel 10c; (6) a part is the light source sub-pixel 10b, and the remaining part is the light detection sub-pixel 10a; ( 7) A part is the pure display sub-pixel 10c, and the remaining part is the light detection sub-pixel 10a.
  • the light detection function of the light detection sub-pixel 10a in the light detection mode needs to be used by configuring other light sources capable of generating photo-generated current. .
  • the number of sub-pixels in the OLED pixel structure 100 is m
  • the number of light-detecting sub-pixels 10a is n.
  • the technical solution of this embodiment satisfies the conditions: m ⁇ 3, 1 ⁇ n ⁇ m; where m and n All are natural numbers.
  • the light source sub-pixel 10b is used as a light source, and the light emitted by the light source sub-pixel 10b will be reflected back after irradiating the object outside the display panel, and the light reflected by the object will be detected by light
  • the sub-pixel 10a receives and forms a photo-generated current, which is then read into the IC by the pixel circuit 12 for signal processing.
  • the reflected light has different intensities according to the topography of the surface of the object, so that photo-generated currents of different sizes can be correspondingly formed in different OLED pixel structures 100, so that the After signal processing, the imaging of the surface of the object can be realized, and it can be used in but not limited to fingerprint recognition, image recognition, face recognition, blood sample pulse monitoring and other fields that utilize the principle of light detection.
  • the remaining one sub-pixel is neither the light source sub-pixel 10b nor the light-detecting sub-pixel 10a, and can only realize the normal display function, that is, the pure display sub-pixel 10c.
  • the light source sub-pixel 10b is used as a light source, and the light emitted by the light source sub-pixel 10b will be reflected back after irradiating the object outside the display panel, and the light reflected by the object will be reflected by two
  • the photo-detecting sub-pixels 10a receive and each form a photo-generated current, and the subsequent process is similar to the description in the preceding paragraph.
  • the two photodetection sub-pixels 10a may generate the same photo-generated current response, or may generate different photo-generated current responses, depending on the characteristics of the organic optoelectronic device 15 in the photo-detection sub-pixel 10a.
  • the pure display sub-pixel 10c is not configured in the OLED pixel structure 100 .
  • the two light source sub-pixels 10b serve as light sources at the same time, and the light emitted by the two will be reflected back after irradiating the object outside the display panel, and the light reflected by the object will return. will be received by the light detection sub-pixel 10a to form a photo-generated current, and the subsequent process is similar to the description in the preceding paragraph.
  • the differential signal analysis can be realized by utilizing the different properties of the photocurrent signals generated by the light detection sub-pixel 10a for the light of different colors emitted by the two light source sub-pixels 10b. For example, using the different properties of hemoglobin and deoxyhemoglobin to absorb different colors of light to achieve blood oxygen saturation analysis.
  • the pure display sub-pixel 10c is not configured in the OLED pixel structure 100 .
  • the arrangement of the OLED pixel structure 100 can also be a pentile arrangement, an RGBW arrangement, etc., which can be reasonably designed according to factors such as the actual number of sub-pixels and the actual needs of the product:
  • each sub-pixel includes a substrate 11 , a pixel circuit 12 , a thin film transistor 13 , an interlayer insulating layer 14 , an organic optoelectronic device 15 and a pixel definition layer 16 .
  • the pixel circuit 12 and the thin film transistor 13 are disposed on the substrate 11 , the interlayer insulating layer 14 is disposed on the pixel circuit 12 and the thin film transistor 13 , and the pixel definition layer 16 is disposed on the interlayer insulating layer 14 Above, the organic optoelectronic device 15 is disposed in the pixel definition layer 16 .
  • the first electrode of the organic optoelectronic device 15 is arranged on the interlayer insulating layer 14, and is connected to the thin film transistor 13 through the through hole arranged in the interlayer insulating layer 14; the organic material layer 153 of the organic optoelectronic device 15 is arranged on the first on an electrode; the second electrode of the organic optoelectronic device 15 is arranged on the organic material layer 153 .
  • the first electrode is one of the anode 151 and the cathode 155
  • the second electrode is the other of the anode 151 and the cathode 155 .
  • the first electrode and the second electrode are the anode 151 and the cathode 155 respectively, which are similar to the OLED pixel structure in the conventional sense.
  • the three sub-pixels can exist as the light source sub-pixel 10b, the light-detection sub-pixel 10a, and the pure display sub-pixel 10c, respectively; but in fact, the internal structures of the three sub-pixels are basically the same, and the difference is only There is a difference between the organic material layers 153 of the three sub-pixels: the organic material layer 153 of the photodetection sub-pixel 10a can either be excited to emit light, or can absorb light to generate photo-generated current, because it contains the activity-luminescence described later. Layer 1534.
  • the organic material layer 153 of the light source sub-pixel 10b similar to the organic material layer 153 in the organic light emitting diode in the usual sense, only has the function of emitting light when excited; however, the light emitted by it can not only meet the requirements of the three primary colors, but also can The absorption requirements of the organic material layer 153 of the light detection sub-pixel 10a are satisfied.
  • the organic material layer 153 of the pure display sub-pixel 10c which is the organic material layer 153 in the organic light emitting diode in the usual sense, only has the function of emitting light when excited, and the light emitted only needs to meet the requirements of the three primary colors, instead of The absorption requirements of the organic material layer 153 of the light detection sub-pixel 10a are satisfied.
  • the OLED pixel structure 100 has two modes—a display mode and a detection mode.
  • the display mode the three sub-pixels in the OLED pixel structure 100 can respectively emit light of different colors to form the three primary colors of the display panel; at this time, the OLED pixel structure 100 proposed in this embodiment is different from the OLED pixel structure in the general sense.
  • the function is the same.
  • the detection mode the OLED pixel structure 100 proposed in this embodiment is quite different from the OLED pixel structure in the usual sense, namely:
  • At least one sub-pixel has two modes—light-emitting mode and light-detection mode; in the light-emitting mode, the sub-pixel emits light normally to form the three primary colors of the display panel; in the light-detection mode, when an external object is placed on the surface of the display panel At this time, the light reflected by the external object is accepted by the sub-pixel, and forms a photo-generated current, which is read into the IC for signal processing.
  • OLED pixel structure 100 When such an OLED pixel structure 100 is applied to a display panel, several OLED pixel structures 100 arranged in arrays can affect the impact of external objects on external objects according to the topography of the object surface, different intensities of reflected light, and different magnitudes of photo-generated currents.
  • the surface is imaged, which can be used in fingerprint recognition, image recognition, face recognition, blood sample pulse monitoring and other fields, so that the electronic device can obtain a full-screen light detection function, which enriches the functions of the electronic device screen and improves the convenience
  • a sub-pixel can not only serve as a component with a display function, but also as a component with a light detection function, and also realizes the integration of functions without occupying the space of additional sub-pixels, thereby avoiding the resolution of the display panel. adverse effects, to avoid adverse effects on the brightness of the display panel.
  • the light detection function and the light emitting function of this embodiment are concentrated in the same layer, which can also reduce the light in and out Signal attenuation caused by the backplane.
  • the preparation process of the OLED pixel structure 100 proposed in this embodiment is the same as the preparation process of the OLED pixel structure in the general sense, and the risk of reducing the yield caused by increasing the process is also avoided.
  • an anode usually a reflective anode, usually a composite anode made of ITO/Ag/ITO
  • organic material layers including but not limited to hole injection layer HIL, hole transport layer HTL, electron blocking layer EBL, and light emitting layer EML, are prepared on the anode through processes such as evaporation, spin coating, inkjet printing, and blade coating.
  • a hole blocking layer HBL, an electron transport layer ETL, and an electron injection layer EIL are prepared on the organic material layer.
  • a translucent cathode is overlaid on the organic material layer. In this way, the organic optoelectronic device in the sub-pixel can be obtained.
  • the structure of a bottom-emission OLED pixel in the usual sense is similar to that of a top-emission OLED pixel in the usual sense, except that the anode becomes a translucent anode, and the cathode becomes a reflective cathode.
  • the transparent OLED pixel structure in the usual sense is also similar to the top-emission OLED pixel structure in the usual sense, except that the anode also becomes a translucent anode.
  • the organic optoelectronic device obtained by the above method can only be used as an organic light-emitting diode (Organic Light-Emitting Diode, OLED for short), and cannot be used as an organic photodetector (OPD for short).
  • OLED Organic Light-Emitting Diode
  • the structure is similar to that of organic light-emitting diodes, with an anode, a hole transport layer HTL, an active layer, an electron transport layer ETL, a cathode, and sometimes a hole injection layer HIL, electron A blocking layer EBL, a hole blocking layer HBL, an electron injection layer EIL, and the like.
  • organic photodetectors have the opposite working principle to organic light-emitting diodes.
  • the organic light emitting diode When the organic light emitting diode is running, the anode potential is higher than the cathode potential, holes and electrons are injected from the anode and the cathode to the hole injection layer HIL and the electron injection layer EIL, respectively, and are transported to the light-emitting layer via the hole transport layer HTL and the electron transport layer ETL.
  • EML excitons are formed, and excitons are deactivated to emit light.
  • the organic photodetector When the organic photodetector is running, the external light first enters the device and generates photo-generated excitons in the active layer.
  • the photo-generated excitons are the donor (Donor, D for short) and the acceptor (A for short) in the active layer ) is separated into holes and electrons under the built-in electric field formed by Anode and cathode transport, and finally collected by anode and cathode to form photogenerated current.
  • the potentials of the anode 151 and the cathode 155 need to be adjustable in order to realize both the luminescence function and the photodetection function.
  • FIG. 4 shows a structure of the organic optoelectronic device 15 in the photodetection sub-pixel 10a. According to the stacking relationship, the anode 151, the hole injection layer 1531, the hole transport layer 1532, the electron blocking layer 1533, the active-light emitting layer 1534, the hole blocking layer 1535, the electron transport layer 1536, the electron injection layer on the backplane are sequentially 1537 and cathode 155.
  • the key technology lies in the active-light-emitting layer 1534, which has two states—the light-emitting state and the detection state: in response to the fact that the potential of the anode 151 is higher than the potential of the cathode 155, the active-light-emitting layer 1534 is in Light-emitting state; at this time, the active-light-emitting layer 1534 can participate in the process as the light-emitting layer in the organic light-emitting diode, and the organic optoelectronic device 15 in the photodetection sub-pixel 10a at this time constitutes the organic light-emitting diode to realize the light-emitting function.
  • the active-light-emitting layer 1534 In response to the situation that the potential of the anode 151 is lower than the potential of the cathode 155, the active-light-emitting layer 1534 is in a detection state; at this time, the active-light-emitting layer 1534 can participate in the work as an active layer in the organic photodetector, and the current
  • the organic photoelectric device 15 in the photodetection sub-pixel 10a constitutes an organic photodetector and realizes the photodetection function.
  • the hole injection layer 1531, the hole transport layer 1532, the electron blocking layer 1533, the active-light emitting layer 1534, the hole blocking layer 1535, the electron transport layer 1536, and the electron injection layer 1537 are included in the organic material layer 153, and the empty
  • the hole injection layer 1531 , the hole transport layer 1532 and the electron blocking layer 1533 are included in the first functional layer
  • the hole blocking layer 1535 , the electron transport layer 1536 and the electron injection layer 1537 are included in the second functional layer. Because of the first functional layer and the second functional layer, the movement process of holes and electrons will be smoother, which is beneficial to improve the light emitting function and the light detection function of the tube.
  • the active-light-emitting layer 1534 has both the light-emitting function and the light-detecting function, one of the designs is as follows:
  • the active-light-emitting layer 1534 includes a first organic compound having hole transport properties, a second organic compound having electron transport properties or both hole transport properties and electron transport properties, and capable of converting singlet energy into fluorescence or triplet energy A third organic that converts to phosphorescence;
  • the absolute value of the energy of the highest occupied orbital (Highest Occupied Molecular Orbit, HOMO) of the first organic matter is not greater than the absolute value of the energy of the highest occupied orbital of the second organic matter, and the lowest unoccupied orbital (Lowest Occupied Orbit) of the first organic matter.
  • the absolute value of the energy of the Unoccupied Molecular Orbit, referred to as LUMO) is not greater than the absolute value of the energy of the lowest unoccupied orbital of the second organic matter;
  • the active-light-emitting layer 1534 will generate photo-excitons due to the irradiation of light, and the photo-excitons will be on the interface between the first organic matter and the second organic matter. are separated into holes and electrons, the holes stay in the donor material (the first organic compound), and the electrons reach the acceptor material (the second organic compound); after that, the holes and electrons go to the anode 151 and the cathode on both sides respectively. 155 is transmitted, and finally collected by the anode 151 and the cathode 155 to form a photo-generated current to realize the photo-detection function.
  • the active-light-emitting layer 1534 works as a light-emitting layer in the organic optoelectronic device
  • the first organic compound and the second organic compound constitute a dual host material
  • the third organic compound constitutes a guest material.
  • the three together constitute a dual-host material system, and the dual-host material system can be used as a light-emitting layer of an organic light-emitting diode.
  • Dual host material that is, two host materials, one is a host material with hole transport properties, and the other is a host material with electron transport properties or both hole transport properties and electron transport properties; The main material is used in a mixed way.
  • the dual-host material system one case is that there will be a more red-shifted luminescence that is different from the intrinsic luminescence of the two host materials, which is called exciplex luminescence; compared with the traditional single-host material system, it will give the opportunity to Light-emitting diodes bring lower driving voltage, higher efficiency, and longer life.
  • exciplex luminescence does not occur, but it still has better performance than the traditional single-host material system, which is due to the more balanced light-emitting layer. hole transport and electron transport.
  • the host material with hole transport properties will also be used with another host material with electron transport properties or both hole transport properties and electron transport properties - thermally activated delayed fluorescence (TADF) materials.
  • TADF thermally activated delayed fluorescence
  • phosphorescent light-emitting material to form a dual-host material system which can realize hyper-fluorescence light emission. Its light-emitting mechanism takes advantage of the high utilization rate of triplet state energy of thermally activated delayed fluorescent materials, and transfers almost 100% of the energy to the light-emitting materials for light-emitting.
  • the thermally activated delayed fluorescent material Due to the design of the hole transport group and the electron transport group, the thermally activated delayed fluorescent material has a small overlap between the highest occupied orbital and the lowest unoccupied orbital, so that its singlet state and triplet state are very close, so that the original can not emit light.
  • the triplet energy is utilized by reversing the intersystem jumping process back to the singlet state.
  • the dual-host material system whether it is an exciplex luminescence system or a hyper-fluorescence luminescence system, can be regarded as a system with a donor-acceptor, which provides a necessary condition for the separation of photogenerated excitons. Because the band shift of the donor-acceptor interface is important for photodetection devices.
  • 5 is a schematic diagram of the energy band shift of the interface between the donor and the acceptor, and E ex represents the energy of the photogenerated excitons formed in the active-emitting layer 1534;
  • the highest occupied orbital energy HOMO D of the material (second organic) is low in absolute value, and the acceptor material (second organic) has a higher LOMO A than the donor material (first organic) in absolute value.
  • At least one sub-pixel is the light source sub-pixel 10b. That is, the absorption spectrum of at least one material of the active-light emitting layer 1534 in the organic optoelectronic device 15 in the photodetection subpixel 10a overlaps the emission spectrum of at least one of the other subpixels. This is the condition for generating photogenerated excitons in either the donor material or the acceptor material. It can be understood that the present application uses the organic optoelectronic device of a certain sub-pixel to emit light and irradiates the organic optoelectronic device 15 of another sub-pixel to realize the light detection function, so as to realize the integration of functions.
  • the IVL characteristics of the device were measured under forward voltage, and at 10mA/ cm2 , the luminescence characteristics of the device were as follows:
  • the reverse IV characteristics of the devices were measured at a negative voltage, followed by a blue light 445 nm light source with an energy density of 30 A/W to measure the IV characteristics of the devices.
  • the organic optoelectronic device 15 can realize the light emitting function and the light detection function of the organic optoelectronic device 15 in the photodetection sub-pixel 10a in the present application. It should be understood that the structure and material design of the device described here are only examples to prove that the dual function can be achieved, and are not intended to limit the scope of the present application. The above structures and materials can also be replaced by other structures and materials without departing from the present The technical idea of the application.
  • the present application also proposes a display panel, which includes the aforementioned OLED pixel structure 100 , and the specific structure of the OLED pixel structure 100 refers to the aforementioned embodiments. Since the present display panel adopts all the technical solutions of all the foregoing embodiments, it at least has all the functions brought about by all the technical solutions of all the foregoing embodiments, and will not be repeated here.
  • the present application also proposes an electronic device, which includes the aforementioned display panel, and the specific structure of the display panel refers to the aforementioned embodiments. Since the electronic device adopts all the technical solutions of all the foregoing embodiments, it has at least all the functions brought by all the technical solutions of all the foregoing embodiments, and will not be repeated here.
  • the electronic devices can be but are not limited to mobile phones, tablet computers, personal digital assistants (Personal Digital Assistant, PDA), e-book readers, MP3 (Motion Picture Experts Compression Standard Audio Layer 3, Moving Picture Experts Group Audio Layer) III) Players, MP4 (Motion Picture Experts Compression Standard Audio Layer 4, Moving Picture Experts Group Audio Layer IV) players, wearable devices, navigators, handheld game consoles, etc.
  • PDA Personal Digital Assistant
  • MP3 Motion Picture Experts Compression Standard Audio Layer 3, Moving Picture Experts Group Audio Layer III
  • MP4 Motion Picture Experts Compression Standard Audio Layer 4, Moving Picture Experts Group Audio Layer IV
  • wearable devices navigators, handheld game consoles, etc.

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

La présente invention concerne une structure de pixel à OLED, un panneau d'affichage utilisant la structure de pixel à OLED, et un dispositif électronique utilisant le panneau d'affichage. La structure de pixel à OLED comprend au moins trois sous-pixels, au moins un sous-pixel étant un sous-pixel de détection de lumière ; le sous-pixel de détection de lumière a un mode d'émission de lumière et un mode de détection de lumière ; et un dispositif photoélectrique organique dans le sous-pixel de détection de lumière forme une diode électroluminescente organique dans le mode d'émission de lumière, et forme un détecteur photoélectrique organique dans le mode de détection de lumière. Au moyen de la solution technique de la présente invention, la commodité d'utilisation de l'écran d'un dispositif électronique peut être améliorée.
PCT/CN2022/087741 2021-04-28 2022-04-19 Structure de pixel à oled, panneau d'affichage et dispositif électronique WO2022228217A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN202110469529.8 2021-04-28
CN202110469529.8A CN113193030A (zh) 2021-04-28 2021-04-28 Oled像素结构、显示面板以及电子设备

Publications (1)

Publication Number Publication Date
WO2022228217A1 true WO2022228217A1 (fr) 2022-11-03

Family

ID=76980110

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2022/087741 WO2022228217A1 (fr) 2021-04-28 2022-04-19 Structure de pixel à oled, panneau d'affichage et dispositif électronique

Country Status (3)

Country Link
CN (1) CN113193030A (fr)
TW (1) TWI831187B (fr)
WO (1) WO2022228217A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113193030A (zh) * 2021-04-28 2021-07-30 广东阿格蕾雅光电材料有限公司 Oled像素结构、显示面板以及电子设备

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021009621A1 (fr) * 2019-07-17 2021-01-21 株式会社半導体エネルギー研究所 Dispositif d'affichage, module d'affichage et appareil électronique
CN112510075A (zh) * 2020-08-03 2021-03-16 神盾股份有限公司 一种具有光感测功能的双模显示装置
WO2021053459A1 (fr) * 2019-09-20 2021-03-25 株式会社半導体エネルギー研究所 Dispositif d'affichage, module d'affichage, et dispositif électronique
CN113193030A (zh) * 2021-04-28 2021-07-30 广东阿格蕾雅光电材料有限公司 Oled像素结构、显示面板以及电子设备

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050100657A1 (en) * 2003-11-10 2005-05-12 Macpherson Charles D. Organic material with a region including a guest material and organic electronic devices incorporating the same
CN110867468A (zh) * 2019-10-30 2020-03-06 深圳市华星光电半导体显示技术有限公司 一种显示面板及其制作方法
CN111402788A (zh) * 2020-04-08 2020-07-10 深圳市华星光电半导体显示技术有限公司 一种像素电路和显示面板
CN111863893B (zh) * 2020-07-13 2022-04-05 武汉华星光电半导体显示技术有限公司 一种显示面板及其制备方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021009621A1 (fr) * 2019-07-17 2021-01-21 株式会社半導体エネルギー研究所 Dispositif d'affichage, module d'affichage et appareil électronique
WO2021053459A1 (fr) * 2019-09-20 2021-03-25 株式会社半導体エネルギー研究所 Dispositif d'affichage, module d'affichage, et dispositif électronique
CN112510075A (zh) * 2020-08-03 2021-03-16 神盾股份有限公司 一种具有光感测功能的双模显示装置
CN113193030A (zh) * 2021-04-28 2021-07-30 广东阿格蕾雅光电材料有限公司 Oled像素结构、显示面板以及电子设备

Also Published As

Publication number Publication date
CN113193030A (zh) 2021-07-30
TWI831187B (zh) 2024-02-01
TW202242840A (zh) 2022-11-01

Similar Documents

Publication Publication Date Title
KR102588088B1 (ko) 폴더블 표시장치
WO2021250507A1 (fr) Procédé d'attaque pour dispositif d'affichage
US20220384526A1 (en) Display Device, Display Module, and Electronic Device
WO2021152418A1 (fr) Dispositif d'affichage, module d'affichage et instrument électronique
WO2022228217A1 (fr) Structure de pixel à oled, panneau d'affichage et dispositif électronique
WO2022003504A1 (fr) Dispositif d'affichage, module d'affichage et appareil électronique
US11900721B2 (en) Electronic device and program
US11817053B2 (en) Display device
CN114868383A (zh) 显示装置
KR20240044514A (ko) 표시 장치의 보정 방법, 및 표시 장치
US12020513B2 (en) Electronic device and authentication method of electronic device
WO2022053904A1 (fr) Dispositif d'affichage, module d'affichage et appareil électronique
US20230103995A1 (en) Display device
US20230232645A1 (en) Display device, display module, and electronic device
JP2017103224A (ja) 有機発光ダイオード及びこれを備える有機電界発光表示装置、そして有機発光ダイオードの製造方法
WO2022162493A1 (fr) Dispositif d'affichage, module d'affichage, dispositif électronique et procédé de fabrication de dispositif d'affichage
US20230165055A1 (en) Display device, display module, and electronic device
WO2022200915A1 (fr) Équipement électronique
US20230309346A1 (en) Imaging device, display apparatus, and method for manufacturing display apparatus
WO2023017349A1 (fr) Dispositif d'affichage, module d'affichage et équipement électronique
US20240138169A1 (en) Semiconductor device and electronic device
WO2022069988A1 (fr) Dispositif d'affichage, module d'affichage et appareil électronique
WO2022053908A1 (fr) Dispositif d'affichage, module d'affichage et appareil électronique
US20240074272A1 (en) Display Apparatus, Display Module, and Electronic Device
US20240090291A1 (en) Display apparatus, display module, and electronic device

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 22794688

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 22794688

Country of ref document: EP

Kind code of ref document: A1