WO2022226913A1 - Résonateur mems en silicium piézoélectrique et dispositif électronique - Google Patents

Résonateur mems en silicium piézoélectrique et dispositif électronique Download PDF

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Publication number
WO2022226913A1
WO2022226913A1 PCT/CN2021/091099 CN2021091099W WO2022226913A1 WO 2022226913 A1 WO2022226913 A1 WO 2022226913A1 CN 2021091099 W CN2021091099 W CN 2021091099W WO 2022226913 A1 WO2022226913 A1 WO 2022226913A1
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doping concentration
silicon
temperature compensation
piezoelectric
layer
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PCT/CN2021/091099
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English (en)
Chinese (zh)
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张孟伦
杨清瑞
宫少波
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天津大学
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Priority to PCT/CN2021/091099 priority Critical patent/WO2022226913A1/fr
Publication of WO2022226913A1 publication Critical patent/WO2022226913A1/fr

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details

Definitions

  • the invention relates to the technical field of resonators, in particular to a piezoelectric MEMS silicon resonator and electronic equipment.
  • the resonant frequency of the resonator drifts with temperature.
  • the sensitivity of the resonant frequency of the device to temperature changes can be represented by the temperature coefficient of frequency (TCF, temperature coefficient of frequency), which means the amount of change in the resonant frequency per degree change in temperature.
  • TCF temperature coefficient of frequency
  • the equivalent frequency temperature coefficient is the weighted average of the frequency temperature coefficients of each layer of materials, which can be expressed as:
  • ⁇ n is the composite equivalent frequency temperature coefficient
  • E i , t i are the Young's modulus and weight (eg thickness) of the i-th layer material, respectively. Therefore, the adjustment of the equivalent TCF of the composite structure can be realized by adjusting the weight ratio between the materials of each layer, the Young's modulus and the TCF of each order, so that it is zero or approximately zero in a certain temperature range, thereby improving the performance of the device. stability.
  • the TCF of the resonator can be adjusted by adjusting the thickness ratio between the layers and selecting the single crystal silicon phase.
  • the frequency temperature coefficient of single crystal silicon will change with the doping concentration, and the doping type can be p -type or n-type doping . It can control the frequency temperature coefficient of the entire resonator, and even change the frequency temperature coefficient of the resonator from negative to positive.
  • the Young's modulus and stiffness of single crystal silicon are different along different crystal directions, the frequency temperature coefficient of the single crystal silicon resonator can also be adjusted through the selection of crystal directions.
  • a resonator has a composite structure cantilever beam composed of an upper electrode, an AlN piezoelectric layer, a lower electrode, and a silicon temperature compensation layer, and the temperature coefficient of the first-order frequency of AlN is about -30ppm/K
  • the single crystal can be adjusted.
  • the doping concentration of silicon makes the temperature coefficient of the first-order frequency of the whole resonator close to 0ppm/K, and at the same time, the thickness ratio between the layers can be adjusted and the crystal orientation of single crystal silicon can be adjusted, so that the TCF is equal to or close to zero, so as to achieve Purpose of temperature compensation.
  • this method is difficult to take into account the high-order frequency temperature coefficient, and the quality factor and electromechanical coupling coefficient of the resonator may be deteriorated accordingly.
  • the present invention proposes a piezoelectric MEMS silicon resonator structure for fine temperature compensation, which can improve the performance and reliability of the resonator as a whole.
  • a first aspect of the present invention provides a piezoelectric MEMS silicon resonator.
  • the resonant structure in the device includes a stacked electrode layer, a piezoelectric layer, and a non-uniformly doped silicon temperature compensation layer, the non-uniformly doped silicon temperature compensation layer.
  • the complementary layer contains at least two different doping concentrations, and/or, at least two different doping elements.
  • the stress distribution in the piezoelectric layer and the doping concentration distribution of the silicon temperature compensation layer contains at least two different doping concentrations
  • the stress distribution in the piezoelectric layer and the doping concentration distribution of the silicon temperature compensation layer The following preset correspondence rules are satisfied between the two: when the resonant structure works in the Lamé mode, or when the thickness of the piezoelectric layer is smaller than the thickness of the silicon temperature compensation layer, the piezoelectric layer in the The stress distribution is positively correlated with the doping concentration distribution of the silicon temperature compensation layer; when the resonant structure works in the Lamb mode or the bending mode, or when the thickness of the piezoelectric layer is greater than the silicon temperature In the case of the thickness of the compensation layer, the stress distribution in the piezoelectric layer is negatively correlated with the doping concentration distribution of the silicon temperature compensation layer.
  • the resonance structure is a cantilever beam, a fixed beam, a simply supported beam or a diaphragm.
  • the resonance structure is a cantilever beam extending along a first direction
  • the cantilever beam includes the electrode layer, the piezoelectric layer and the non-uniformly doped silicon temperature stacked along the second direction.
  • the complementary layer wherein the first direction and the second direction are perpendicular to each other.
  • the doping concentration is the highest at the position of the first end face near the free end of the cantilever beam, and the doping concentration at the position of the second end face near the fixed end of the cantilever beam is the lowest, and the doping concentration is along the Gradient in the first direction.
  • the doping concentration is the lowest at the position of the first end face near the free end of the cantilever beam, and the doping concentration at the position of the second end face near the fixed end of the cantilever beam is the highest, and the doping concentration is along the Gradient in the first direction.
  • the doping concentration is the lowest at the position of the first center cut plane of the silicon temperature compensation layer, the position of the first end surface near the free end of the cantilever beam and the position near the fixed end of the cantilever beam.
  • the doping concentration is the highest at the position of the second end face, and the doping concentration is gradually graded from the first central cut surface to the first end face and the second end face, wherein the first central cut surface and the first end face and the second end face parallel and equidistant from both.
  • the doping concentration of the first side near the piezoelectric layer is the highest, the doping concentration of the second side far from the piezoelectric layer is the lowest, and the doping concentration is along the The gradient in the second direction is described.
  • the doping concentration of the first side near the piezoelectric layer is the lowest, and the doping concentration of the second side far from the piezoelectric layer is the highest, and the doping concentration is along the line.
  • the gradient in the second direction is described.
  • the doping concentration is the lowest at the second center tangent position of the silicon temperature compensation layer, which is close to the first side surface of the piezoelectric layer and the second side is far away from the piezoelectric layer.
  • the doping concentration at the side position is the highest, and the doping concentration is gradually graded from the second centering tangent to the first and second sides, wherein the second centering tangent is parallel to the first and second sides and The distance to both is equal.
  • the doping concentration is the highest at the second center tangent position of the silicon temperature compensation layer, which is close to the first side surface of the piezoelectric layer and the second side is far away from the piezoelectric layer.
  • the doping concentration at the side position is the lowest, and the doping concentration is gradually graded from the second centering tangent to the first and second sides, wherein the second centering tangent is parallel to the first and second sides and The distance to both is equal.
  • the center point of the silicon temperature compensation layer has the highest doping concentration, which is close to the first side of the piezoelectric layer and far away from the second side of the piezoelectric layer.
  • the first end face position near the free end of the cantilever beam and the second end face position near the fixed end of the cantilever beam have the lowest doping concentration, and the doping concentration is graded from the center point to the periphery.
  • the central point of the silicon temperature compensation layer has the lowest doping concentration, which is close to the first side of the piezoelectric layer and far away from the second side of the piezoelectric layer.
  • the first end face position near the free end of the cantilever beam and the second end face position near the fixed end of the cantilever beam have the highest doping concentration, and the doping concentration is graded from the center point to the periphery.
  • the doping concentration at the position with the highest doping concentration is greater than or equal to 10 19 cm -3 , or greater than or equal to 10 20 cm -3 .
  • a central region in the second direction has a first doping concentration, and other parts have a second doping concentration, and the first doping concentration is greater than the second doping concentration concentration.
  • a position close to the fixed end of the cantilever beam in the first direction has a first doping concentration, and other parts have a second doping concentration, and the first doping concentration is greater than the second doping concentration.
  • a region in the first direction close to the fixed end of the cantilever beam and in the center in the second direction has a first doping concentration, and the remaining parts have a second doping concentration,
  • the first doping concentration is greater than the second doping concentration.
  • the silicon temperature compensation layer has a first doping concentration at a fixed position, and a second doping concentration at other parts, and the first doping concentration is greater than the second doping concentration.
  • the first doping concentration is greater than or equal to 10 19 cm -3 , or greater than or equal to 10 20 cm -3 .
  • a second aspect of the present invention provides an electronic device, which is characterized by comprising the piezoelectric MEMS silicon resonator disclosed in the present invention.
  • an unevenly distributed doping scheme is adopted in the silicon structure of the resonator, and the corresponding doping scheme is designed according to the needs of different parts.
  • Doping concentration to achieve more accurate temperature compensation (such as full compensation of the temperature coefficient of each order frequency).
  • the distribution of the stiffness of the single crystal silicon is adjusted by the concentration distribution. When the stiffness distribution and the stress, strain or displacement field distribution reach a certain mutual match, the electromechanical coupling coefficient of the resonator will be improved.
  • FIG. 1 is a schematic cross-sectional view of a piezoelectric MEMS silicon resonator according to a first embodiment of the present invention
  • FIG. 2 is a schematic cross-sectional view of a piezoelectric MEMS silicon resonator according to a second embodiment of the present invention
  • FIG. 3 is a schematic cross-sectional view of a piezoelectric MEMS silicon resonator according to a third embodiment of the present invention.
  • FIG. 4 is a schematic cross-sectional view of a piezoelectric MEMS silicon resonator according to a fourth embodiment of the present invention.
  • FIG. 5 is a schematic cross-sectional view of a piezoelectric MEMS silicon resonator according to a fifth embodiment of the present invention.
  • FIG. 6 is a schematic cross-sectional view of a piezoelectric MEMS silicon resonator according to a sixth embodiment of the present invention.
  • FIG. 7 is a schematic cross-sectional view of a piezoelectric MEMS silicon resonator according to a seventh embodiment of the present invention.
  • FIG. 8 is a schematic cross-sectional view of a piezoelectric MEMS silicon resonator according to an eighth embodiment of the present invention.
  • FIG. 9 is a schematic cross-sectional view of a piezoelectric MEMS silicon resonator according to a ninth embodiment of the present invention.
  • FIG. 10 is a schematic cross-sectional view of a piezoelectric MEMS silicon resonator according to a tenth embodiment of the present invention.
  • FIG. 11 is a schematic cross-sectional view of a piezoelectric MEMS silicon resonator according to an eleventh embodiment of the present invention.
  • FIG. 12 is a schematic cross-sectional view of a piezoelectric MEMS silicon resonator according to a twelfth embodiment of the present invention.
  • FIG. 13 is a schematic cross-sectional view of a piezoelectric MEMS silicon resonator according to a thirteenth embodiment of the present invention.
  • the resonant structure specifically includes stacked electrode layers, piezoelectric layers and a non-uniformly doped silicon temperature compensation layer, and the non-uniformly doped silicon temperature compensation layer includes at least two The different doping concentrations, and/or, contain at least two different doping elements.
  • the stress distribution in the piezoelectric layer and the doping concentration distribution of the silicon temperature compensation layer satisfy a preset correspondence rule .
  • the resonant structure in the device may be in the form of a cantilever beam, a fixed beam, a simply supported beam, or a diaphragm.
  • the preset corresponding rules may specifically include: (1) When the resonant structure works in the Lamé mode, or when the thickness of the piezoelectric layer is less than the thickness of the silicon temperature compensation layer, the stress distribution in the piezoelectric layer is different from the silicon temperature compensation layer.
  • the piezoelectric MEMS silicon resonator according to an embodiment of the present invention, wherein the resonance structure is a cantilever beam extending along a first direction, and the cantilever beam includes an electrode layer, a piezoelectric layer, and a non-uniformly doped silicon temperature stacked along a second direction.
  • the complementary layer wherein the first direction and the second direction are perpendicular to each other.
  • the piezoelectric layer-electrode layer stack can be located vertically above or vertically below or horizontally to the side of the silicon temperature compensation layer.
  • the number of electrode layers can be two, which are respectively arranged on both sides of the piezoelectric layer; the number of electrode layers can also be only one, the degenerate doped silicon temperature compensation layer is used as another electrode layer, and the silicon temperature compensation layer is connected with a single electrode layer. constitute the working electrode pair.
  • the first direction may be the horizontal direction and the second direction may be the vertical direction, or the first direction may be the x-axis direction in the horizontal plane and the second direction may be the y-axis direction in the horizontal plane, and so on.
  • the specific material can be selected from molybdenum, ruthenium, gold, aluminum, magnesium, tungsten, copper, titanium, iridium, osmium, chromium or a composite of the above metals or their alloys.
  • non-metallic conductive materials such as doped silicon, can also be used.
  • Piezoelectric layer which can be selected from materials such as aluminum nitride, zinc oxide, and PZT, and includes a rare earth element doped material with a certain atomic ratio of the above materials.
  • Lower electrode same as 101.
  • the lower electrode is an optional structure.
  • the silicon temperature compensation layer is heavily doped or degenerately doped silicon, it can be used as the lower electrode.
  • Silicon temperature compensation layer the material can be selected from monocrystalline silicon, polycrystalline silicon, etc. The darker the color, the higher the doping concentration.
  • the buried oxide layer is an optional structure. If it is not a SOI wafer processing cantilever beam, this structure layer can also be omitted.
  • FIG. 1 is a schematic cross-sectional view of a piezoelectric MEMS silicon resonator according to a first embodiment of the present invention.
  • the doping concentration is the highest at the position of the first end face near the free end of the cantilever beam (ie, the left end face in the figure), and the first end face near the fixed end of the cantilever beam has the highest doping concentration.
  • the position of the two end faces ie, the right end face in the figure
  • the doping concentration is graded along the first direction (ie, the horizontal direction in the figure).
  • the doping concentration is higher at the position closer to the free end of the cantilever beam, and the lower the doping concentration is at the position closer to the fixed end of the cantilever beam.
  • the temperature compensation occurs more at the free end with small stress and strain, and the fixed end with large stress and strain does not need too high doping concentration, thus avoiding the excessive change of the rigidity of the fixed end after high concentration doping. Resonant frequency drift. That is, the negative effects of doping are prevented while compensating for temperature.
  • the doping method of this embodiment is preferably selected for temperature compensation.
  • FIG 2 is a schematic cross-sectional view of a piezoelectric MEMS silicon resonator according to a second embodiment of the present invention.
  • the doping concentration of the first end face near the free end of the cantilever beam ie the left end face in the figure
  • the doping concentration of the first end face near the fixed end of the cantilever beam is the lowest.
  • the position of the two end faces ie, the right end face in the figure
  • the doping concentration is graded along the first direction (ie, the horizontal direction in the figure).
  • the concentration distribution in the second embodiment is opposite to that in the first embodiment.
  • the heat distribution of the cantilever beam vibration heat generation is considered. Due to the larger stress and strain at the fixed end, more vibrational mechanical energy is converted into heat, so the temperature change at the fixed end is relatively more obvious. Corresponding temperature compensation according to the temperature distribution of each part can keep the resonant frequency of each part stable, and avoid the change of vibration mode due to the inconsistent change of resonant frequency between different parts.
  • the doping method of this embodiment is preferably selected for temperature compensation.
  • FIG. 3 is a schematic cross-sectional view of a piezoelectric MEMS silicon resonator according to a third embodiment of the present invention.
  • the doping concentration of the first central tangential plane of the silicon temperature compensation layer is the lowest, and the position of the first end surface close to the free end of the cantilever beam (that is, the The left end face) and the position of the second end face near the fixed end of the cantilever beam shown (that is, the right end face in the figure) have the highest doping concentration, and the doping concentration is graded from the first centering cut to the first end face and the second end face respectively, wherein , the first central tangent plane is parallel to and equidistant from the first and second end faces.
  • the fixed end is designed with a higher doping concentration.
  • more temperature compensation is set near the free end.
  • the doping of this embodiment is preferred. method for temperature compensation.
  • the doping concentration is the highest at the position near the first side of the piezoelectric layer (ie, the top surface in the figure), and the doping concentration at the second side position far away from the piezoelectric layer (ie, the bottom surface in the figure) is the lowest.
  • the doping concentration is graded along the second direction (ie, the vertical direction in the figure).
  • the interface defects reciprocally slide with the vibration to generate thermal energy, so the temperature here changes greatly, and a higher temperature can be designed near the interface. doping concentration.
  • the frequency shift effect caused by the heat distribution is obvious, for example, when the cantilever beam works in the Lamb mode or the bending mode, or when the thickness of the piezoelectric layer is greater than that of the silicon temperature compensation layer, the doping of this embodiment is preferred. method for temperature compensation.
  • FIG 5 is a schematic cross-sectional view of a piezoelectric MEMS silicon resonator according to a fifth embodiment of the present invention.
  • the doping concentration near the first side of the piezoelectric layer that is, the top surface in the figure
  • the position ie, the bottom surface in the figure
  • the doping concentration is graded along the second direction (ie, the vertical direction in the figure).
  • the strain of the bottom surface of the silicon temperature compensation layer is larger than that of the top surface, so the temperature of the bottom surface varies greatly. Therefore, a higher doping concentration is required for the bottom surface.
  • the dopant of this embodiment is preferentially selected. Miscellaneous way to perform temperature compensation.
  • FIG. 6 is a schematic cross-sectional view of a piezoelectric MEMS silicon resonator according to a sixth embodiment of the present invention.
  • the doping concentration of the second center section of the silicon temperature compensation layer is the lowest, which is close to the first side position of the piezoelectric layer ( That is, the top surface in the figure) and the second side position away from the piezoelectric layer (that is, the bottom surface in the figure) have the highest doping concentration, and the doping concentration is graded from the second centering cut to the first side and the second side respectively.
  • the second centering tangent is parallel to and equidistant from the first side and the second side.
  • the conditions of the fourth embodiment and the fifth embodiment are comprehensively considered, and the temperature changes of the silicon temperature compensation layer near the upper and lower surfaces are larger, so the required temperature compensation range is also larger.
  • the doping concentration near the upper and lower sides of the silicon temperature compensation layer is higher, and the concentration is lower at the middle position.
  • the doping concentration is the highest at the second center section of the silicon temperature compensation layer, which is close to the first side position of the piezoelectric layer (that is, the top in the figure). surface) and the second side position away from the piezoelectric layer (that is, the bottom surface in the figure), the doping concentration is the lowest, and the doping concentration is graded from the second center to the first side and the second side respectively, wherein the second center The cut plane is parallel to and equidistant from the first side and the second side.
  • the stiffness of the upper and lower sides where the stress is large is changed due to doping.
  • the concentration distribution is designed to be high in the middle and low on the upper and lower sides, so that the stiffness change in the large stress region is not obvious, thus avoiding the frequency drift caused by doping (stiffness change) while taking into account the overall temperature compensation.
  • the doping method of this embodiment is preferably selected for temperature compensation.
  • FIG 8 is a schematic cross-sectional view of a piezoelectric MEMS silicon resonator according to an eighth embodiment of the present invention.
  • the center point of the silicon temperature compensation layer has the highest doping concentration, which is close to the first side position of the piezoelectric layer (ie, the top surface in the figure).
  • the doping concentration is the lowest, and the doping concentration is gradually graded from the center point to the periphery.
  • the doping method of this embodiment is preferably selected for temperature compensation.
  • FIG. 9 is a schematic cross-sectional view of a piezoelectric MEMS silicon resonator according to a ninth embodiment of the present invention.
  • the central point of the silicon temperature compensation layer has the lowest doping concentration, which is close to the first side of the piezoelectric layer (ie, the top surface in the figure).
  • the doping concentration is the highest, and the doping concentration is graded from the center point to the periphery.
  • the distribution of the doping concentration in the ninth embodiment is opposite to that in the eighth embodiment.
  • the doping method of this embodiment is preferentially selected to perform temperature compensation.
  • the doping type can be p-type or n-type doping, when the doping concentration is very high (for example, when the doping concentration is greater than or equal to a preset threshold ), which can control the frequency temperature coefficient of the entire resonator, and even change the frequency temperature coefficient from positive to negative or from negative to positive. Therefore, in the various embodiments shown in FIGS. 1 to 9 , in order to better achieve the temperature compensation effect, the doping concentration at the highest position of the doping concentration is greater than or equal to 10 19 cm ⁇ 3 , and further, the doping concentration is greater than or equal to 10 20 cm -3 .
  • FIG. 10 is a schematic cross-sectional view of a piezoelectric MEMS silicon resonator according to a tenth embodiment of the present invention.
  • the silicon temperature compensation layer of the piezoelectric MEMS silicon resonator only the central region in the second direction (ie, the central region in the vertical direction) has the first doping concentration, and the remaining parts have the second doping concentration impurity concentration, the first doping concentration is greater than the second doping concentration.
  • degenerate doping can be performed only in part of the region to achieve the purpose of temperature compensation for a specific position.
  • doping is performed only on the central axis surface of the silicon temperature compensation layer, since there is no strain on this surface, the frequency change caused by the introduction of impurities is avoided to the greatest extent.
  • the dopant of this embodiment is preferentially selected. Miscellaneous way to perform temperature compensation.
  • FIG. 11 is a schematic cross-sectional view of a piezoelectric MEMS silicon resonator according to an eleventh embodiment of the present invention.
  • the position close to the fixed end of the cantilever beam in the first direction has a first doping concentration, and the other parts have a second doping concentration.
  • the impurity concentration is greater than the second dopant concentration.
  • the eleventh embodiment due to the larger stress and strain at the fixed end, more vibrational mechanical energy is converted into heat, so the temperature change at the fixed end is relatively more obvious.
  • Corresponding temperature compensation according to the temperature distribution of each part can keep the resonant frequency of each part stable, and avoid the change of vibration mode due to the inconsistent change of resonant frequency between different parts.
  • the frequency shift effect caused by doping in the high stress region is smaller than that caused by the heat distribution, such as when the cantilever operates in Lamb mode or bending mode, or when the thickness of the piezoelectric layer is greater than that of the silicon temperature compensation layer
  • the doping method of this embodiment is preferably selected for temperature compensation.
  • FIG. 12 is a schematic cross-sectional view of a piezoelectric MEMS silicon resonator according to a twelfth embodiment of the present invention.
  • the region close to the fixed end of the cantilever beam in the first direction and the central region in the second direction (that is, the right end and the vertical direction as shown in the figure)
  • the upper center position has a first doping concentration, and the remaining parts have a second doping concentration, and the first doping concentration is greater than the second doping concentration.
  • doping is only performed in the middle region near the fixed end, which is the region with the most obvious temperature change and the largest stress, and the effect of temperature compensation on this region is obvious.
  • the frequency shift effect caused by the heat distribution is obvious, for example, when the cantilever beam works in the Lamb mode or the bending mode, or when the thickness of the piezoelectric layer is greater than that of the silicon temperature compensation layer, the doping of this embodiment is preferred. method for temperature compensation.
  • the silicon temperature compensation layer of the piezoelectric MEMS silicon resonator has a first doping concentration at the position of the fixed end, and a second doping concentration at the other parts, and the first doping concentration is greater than the second doping concentration .
  • Doping at the position close to the fixed end of the cantilever beam can also achieve frequency and temperature compensation of the cantilever beam resonator through the mechanical coupling between the fixed end and the cantilever beam; at the same time, since the doping position is not on the cantilever beam, this method can Avoid negative effects caused by cantilever doping, such as Q reduction.
  • high-concentration doping is performed in the fixed region with large stress (here, the fixed region, not the cantilever beam region near the fixed end), increasing the carrier concentration means that the thermal conductivity increases, thus slowing down Temperature drift caused by vibration heat generation.
  • the frequency shift effect caused by the heat distribution is obvious, for example, when the cantilever beam works in the Lamb mode or the bending mode, or when the thickness of the piezoelectric layer is greater than that of the silicon temperature compensation layer, the doping of this embodiment is preferred. method for temperature compensation.
  • the first doping concentration is greater than or equal to 10 19 cm ⁇ 3 , and further, the first doping concentration is greater than or equal to 10 20 cm -3 .
  • the electronic device includes any piezoelectric MEMS silicon resonator disclosed in the present invention.
  • an unevenly distributed doping scheme is adopted in the silicon structure of the resonator, and the corresponding doping scheme is designed according to the needs of different parts.
  • Doping concentration to achieve more accurate temperature compensation (such as full compensation of the temperature coefficient of each order frequency).
  • the distribution of the stiffness of the single crystal silicon is adjusted by the concentration distribution. When the stiffness distribution and the stress, strain or displacement field distribution reach a certain mutual match, the electromechanical coupling coefficient of the resonator will be improved.

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Abstract

Sont divulgués dans la présente invention un résonateur MEMS en silicium piézoélectrique et un dispositif électronique. Le résonateur MEMS en silicium piézoélectrique comprend une poutre en porte-à-faux placée dans une première direction ; et la poutre en porte-à-faux comprend une couche d'électrode, une couche piézoélectrique et une couche de compensation de température en silicium qui sont empilées dans une seconde direction, la première direction et la seconde direction étant perpendiculaires l'une à l'autre, et la couche de compensation de température en silicium étant constituée d'un matériau de silicium dopé non uniformément. Dans la présente invention, en fonction de paramètres tels que la répartition de la température, la répartition des contraintes et la répartition de la quantité de déplacement du résonateur dans un état résonant, un schéma de dopage de répartition non uniforme est utilisé dans une structure en silicium dans le résonateur, et des concentrations de dopage correspondantes sont conçues selon les exigences de différentes parties, de façon à mettre en œuvre une compensation de température plus précise. De plus, la répartition de la rigidité du silicium monocristallin est ajustée au moyen de la distribution de concentration ; et lorsque la distribution de rigidité du silicium monocristallin et la pression, la contrainte ou la distribution de champ de déplacement sont mises en correspondance les unes avec les autres dans une certaine mesure, un coefficient de couplage électromécanique du résonateur est amélioré.
PCT/CN2021/091099 2021-04-29 2021-04-29 Résonateur mems en silicium piézoélectrique et dispositif électronique WO2022226913A1 (fr)

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070120625A1 (en) * 2005-11-30 2007-05-31 Larson John D Iii Film bulk acoustic resonator (FBAR) devices with temperature compensation
CN103053111A (zh) * 2010-08-31 2013-04-17 太阳诱电株式会社 弹性波装置
CN109802646A (zh) * 2018-12-26 2019-05-24 天津大学 带有温度补偿层的谐振器、滤波器
CN111010131A (zh) * 2019-06-06 2020-04-14 天津大学 掺杂浓度变化的体声波谐振器、滤波器及电子设备

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070120625A1 (en) * 2005-11-30 2007-05-31 Larson John D Iii Film bulk acoustic resonator (FBAR) devices with temperature compensation
CN103053111A (zh) * 2010-08-31 2013-04-17 太阳诱电株式会社 弹性波装置
CN109802646A (zh) * 2018-12-26 2019-05-24 天津大学 带有温度补偿层的谐振器、滤波器
CN111010131A (zh) * 2019-06-06 2020-04-14 天津大学 掺杂浓度变化的体声波谐振器、滤波器及电子设备

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