WO2022221025A1 - Improved isolator for processing chambers - Google Patents

Improved isolator for processing chambers Download PDF

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Publication number
WO2022221025A1
WO2022221025A1 PCT/US2022/021844 US2022021844W WO2022221025A1 WO 2022221025 A1 WO2022221025 A1 WO 2022221025A1 US 2022021844 W US2022021844 W US 2022021844W WO 2022221025 A1 WO2022221025 A1 WO 2022221025A1
Authority
WO
WIPO (PCT)
Prior art keywords
wall
isolator
chamber
processing
angled
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2022/021844
Other languages
English (en)
French (fr)
Inventor
Akshay Dhanakshirur
Saketh PEMMASANI
Mayur Govind KULKARNI
Madhu Santosh Kumar Mutyala
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Priority to KR1020237032081A priority Critical patent/KR20230169094A/ko
Priority to CN202280014221.7A priority patent/CN116940707A/zh
Priority to JP2023562486A priority patent/JP2024514139A/ja
Publication of WO2022221025A1 publication Critical patent/WO2022221025A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32834—Exhausting
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45587—Mechanical means for changing the gas flow
    • C23C16/45591—Fixed means, e.g. wings, baffles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H01J2237/3321—CVD [Chemical Vapor Deposition]

Definitions

  • Embodiments described herein generally relate to the field of semiconductor device manufacturing, and more particularly, to an isolator for chemical vapor deposition (CVD) chambers with improved flow.
  • CVD chemical vapor deposition
  • Deposition processes such as chemical vapor deposition (CVD) and plasma enhanced CVD (PECVD) processes, are commonly used in semiconductor device manufacturing to deposit material layers on a substrate surface by reacting one or more gaseous precursors, or activated species thereof, with or on the substrate surface.
  • Gaseous precursors typically include one or both of gas-phase precursors and vapor-phase precursors.
  • the isolator includes a first end contacting the showerhead, a second end opposite the first end, an angled inner wall connected to the first end and extending radially outwardly from the first end towards the second end, a conical inner wall connected to the second end and extending radially inwardly from the second end towards the first end, and a fiat inner wall connecting the angled inner wall to the conical inner wall.
  • an isolator for a processing chamber includes a ring-shaped body.
  • Figure 1 B is a close up view of a portion of Figure 1 A.
  • FIG. 1A is a schematic sectional view of an exemplary processing chamber 100.
  • the processing chamber 100 may be a CVD chamber, a PECVD chamber, an atomic layer deposition (ALD) chamber, or an etching chamber, among other types of vacuum chambers.
  • the processing chamber 100 includes a chamber body 102 having one or more sidewalls 104, a chamber base 106, and a chamber lid assembly 108 which together define a processing volume 103, and a substrate support 120 disposed in the processing volume 103.
  • the processing volume 103 Includes a first volume 109 and a second volume 110.
  • the substrate support 120 includes the first surface 120a facing the chamber lid assembly 108 for receiving a substrate 101, the second surface 120b opposite the first surface 120a and facing the chamber base 106, and a circumferential third surface 120c, shown in Figures 1B and 2, connecting the first surface 120a and the second surface 120b.
  • the third surface 120c faces the one or more sidewalls 104 and is orthogonal to the first and second surfaces 120a, 120b.
  • the first surface 120a has a first plane and the second surface 120b has a second plane substantially in parallel with the first plane. As used herein, the term “substantially parallel” at least means that the first plane and the second plane will not intersect within the processing volume 103 of the processing chamber 100.
  • the C-channel liner 150 is disposed in a circumferential channel located below the substrate support 120 and radially outwardly therefrom.
  • the circumferential channel is defined by the isolator 162, one or more sidewalls 104, and a top plate 105 secured to the one or more sidewalls 104.
  • the top plate 105 is located adjacent to the isolator 162 and disposed radially outwardly therefrom.
  • the circumferential channel and the C-channel liner 150 disposed therein, are located below the second plane of the substrate support 120 when the substrate support 120 is in a raised, substrate processing, position (as shown).
  • top liner 140 and the C-channei liner 150 define an exhaust channel 152 which is in fluid communication with a vacuum source, such as one or more dedicated vacuum pumps, through an exhaust port 172 formed through the C-channei liner 150 and further through one of the one or more sidewalls 104.
  • a vacuum source such as one or more dedicated vacuum pumps
  • a shape 169 of the processing volume 103 defined by the bottom surface 114 of the showerhead 112 and the angled inner wall 168 of the isolator 162 forms an angle 171. It will be appreciated that in the illustrated embodiments, the angle 171 is dependent on the angle 170 of the isolator 162.
  • the angle 171 is greater than 90°, such as about 135° or greater, such as about 90° to about 180°, such as about 135° to about 150°, such as about 140°, such as about 145°, in order to improve flow of processing gases across the flat area 118 and to reduce undesirable residue material deposition on the flat area 118 as described above.
  • the angle 170 and shape 169 of the processing volume 103 may ensure laminar flow of processing gases along the flat area 118.
  • the inner diameter D2 of the isolator 262 measured inside the inner radial edge 272 is less than about 13-3/8 inches, such as about 13 inches to about 13-1/4 inches, such as about 13-1/8 inches.
  • a radial width W2 of the fiat area 218 is less than the radial width W1 of the flat area 118.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
PCT/US2022/021844 2021-04-13 2022-03-25 Improved isolator for processing chambers Ceased WO2022221025A1 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1020237032081A KR20230169094A (ko) 2021-04-13 2022-03-25 프로세싱 챔버들을 위한 개선된 아이솔레이터
CN202280014221.7A CN116940707A (zh) 2021-04-13 2022-03-25 用于处理腔室的改良的隔离器
JP2023562486A JP2024514139A (ja) 2021-04-13 2022-03-25 処理チャンバ用の改良されたアイソレータ

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US17/228,996 US12562355B2 (en) 2021-04-13 2021-04-13 Isolator for processing chambers
US17/228,996 2021-04-13

Publications (1)

Publication Number Publication Date
WO2022221025A1 true WO2022221025A1 (en) 2022-10-20

Family

ID=83509476

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2022/021844 Ceased WO2022221025A1 (en) 2021-04-13 2022-03-25 Improved isolator for processing chambers

Country Status (5)

Country Link
US (1) US12562355B2 (https=)
JP (1) JP2024514139A (https=)
KR (1) KR20230169094A (https=)
CN (1) CN116940707A (https=)
WO (1) WO2022221025A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20230033603A (ko) * 2021-09-01 2023-03-08 에이에스엠 아이피 홀딩 비.브이. 위치 설정 장치를 포함하는 가스 분배 어셈블리
CN116031123A (zh) * 2022-12-31 2023-04-28 北京凯世通半导体有限公司 一种对离子注入机源腔内部进行防护的装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6106625A (en) * 1997-12-02 2000-08-22 Applied Materials, Inc. Reactor useful for chemical vapor deposition of titanium nitride
US20110294303A1 (en) * 2010-05-12 2011-12-01 Applied Materials, Inc. Confined process volume pecvd chamber
CN105714269A (zh) * 2014-12-22 2016-06-29 应用材料公司 用于高产量处理腔室的工艺套件
US20160312359A1 (en) * 2015-04-24 2016-10-27 Applied Materials, Inc. Process kit including flow isolator ring
WO2021003005A1 (en) * 2019-07-04 2021-01-07 Applied Materials, Inc. Isolator apparatus and method for substrate processing chambers

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Publication number Priority date Publication date Assignee Title
TW323387B (https=) * 1995-06-07 1997-12-21 Tokyo Electron Co Ltd
JP3192370B2 (ja) 1995-06-08 2001-07-23 東京エレクトロン株式会社 プラズマ処理装置
US5993594A (en) 1996-09-30 1999-11-30 Lam Research Corporation Particle controlling method and apparatus for a plasma processing chamber
US6063441A (en) 1997-12-02 2000-05-16 Applied Materials, Inc. Processing chamber and method for confining plasma
US5997649A (en) 1998-04-09 1999-12-07 Tokyo Electron Limited Stacked showerhead assembly for delivering gases and RF power to a reaction chamber
US6159299A (en) * 1999-02-09 2000-12-12 Applied Materials, Inc. Wafer pedestal with a purge ring
WO2003065424A2 (en) * 2002-01-25 2003-08-07 Applied Materials, Inc. Apparatus for cyclical deposition of thin films
US20050211167A1 (en) 2002-06-10 2005-09-29 Tokyo Electron Limited Processing device and processing method
US9127362B2 (en) 2005-10-31 2015-09-08 Applied Materials, Inc. Process kit and target for substrate processing chamber
US20090084317A1 (en) 2007-09-28 2009-04-02 Applied Materials, Inc. Atomic layer deposition chamber and components
US10312076B2 (en) 2017-03-10 2019-06-04 Applied Materials, Inc. Application of bottom purge to increase clean efficiency

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6106625A (en) * 1997-12-02 2000-08-22 Applied Materials, Inc. Reactor useful for chemical vapor deposition of titanium nitride
US20110294303A1 (en) * 2010-05-12 2011-12-01 Applied Materials, Inc. Confined process volume pecvd chamber
CN105714269A (zh) * 2014-12-22 2016-06-29 应用材料公司 用于高产量处理腔室的工艺套件
US20160312359A1 (en) * 2015-04-24 2016-10-27 Applied Materials, Inc. Process kit including flow isolator ring
WO2021003005A1 (en) * 2019-07-04 2021-01-07 Applied Materials, Inc. Isolator apparatus and method for substrate processing chambers

Also Published As

Publication number Publication date
TW202247320A (zh) 2022-12-01
US20220328293A1 (en) 2022-10-13
JP2024514139A (ja) 2024-03-28
CN116940707A (zh) 2023-10-24
KR20230169094A (ko) 2023-12-15
US12562355B2 (en) 2026-02-24

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