WO2022198675A1 - Multi-chip module and electronic device having multi-chip module - Google Patents

Multi-chip module and electronic device having multi-chip module Download PDF

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Publication number
WO2022198675A1
WO2022198675A1 PCT/CN2021/083423 CN2021083423W WO2022198675A1 WO 2022198675 A1 WO2022198675 A1 WO 2022198675A1 CN 2021083423 W CN2021083423 W CN 2021083423W WO 2022198675 A1 WO2022198675 A1 WO 2022198675A1
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WO
WIPO (PCT)
Prior art keywords
die
wire
chip
chip module
circuit
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PCT/CN2021/083423
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French (fr)
Chinese (zh)
Inventor
王士伟
Original Assignee
华为技术有限公司
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Application filed by 华为技术有限公司 filed Critical 华为技术有限公司
Priority to CN202180087476.1A priority Critical patent/CN116670824A/en
Priority to PCT/CN2021/083423 priority patent/WO2022198675A1/en
Publication of WO2022198675A1 publication Critical patent/WO2022198675A1/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/38Cooling arrangements using the Peltier effect
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/17Structure, shape, material or disposition of the bump connectors after the connecting process of a plurality of bump connectors

Definitions

  • the present application relates to a multi-chip module and an electronic device having the multi-chip module.
  • Multi-chip Module is a packaging technology that integrates multiple dies on the same substrate. bandwidth density.
  • the package-level multi-chip interconnection architecture mainly includes the following: (1) the chips are directly interconnected through the substrate wiring; (2) the 2.5D package interconnection realized by setting up an interposer between the chip and the substrate This solution requires a silicon interposer and through-silicon via (TSV) technology; (3) by placing an organic fan-out packaging layer between the chip and the substrate, multiple dies are placed on the organic fan-out On the packaging layer, the signals are interconnected between dies through the redistribution layer in the organic fan-out packaging layer. All of the above-mentioned methods use the space of the chip facing the bottom surface of the substrate to perform chip interconnection.
  • TSV through-silicon via
  • the application provides a kind of multi-chip module, comprising:
  • each chip having a bottom surface facing the packaging substrate and a side surface connected to the bottom surface;
  • the at least two chips include a first die and a second die that are adjacently spaced and have opposite sides, a first wire is provided on the bottom surface of the first die, and the first wire is connected to the first die
  • the circuit in the chip extends from the bottom surface and side surface of the first die to the side opposite to the second die, and the bottom surface of the second die is provided with a second wire, the second wire is connected to the circuit in the second die and extends on the bottom surface and the side of the second die to the side of the second die opposite to the first die;
  • An electrical connection structure is provided between the opposite sides of the first die and the second die to electrically connect the first wire and the second wire; or the first die and the A wireless signal transceiving structure is disposed between the opposite sides of the second die, so that the first wire and the second wire are wirelessly communicatively connected.
  • the electrical connection structures are arranged on the sides of adjacent chips to be connected to the wires extending from the surface of the chips respectively, so that the electrical connection structures are respectively electrically connected to the adjacent chips.
  • the first aspect also provides another multi-chip module, which is connected to the wires extending from the surface of the chip by arranging the wireless signal transceiver structure on the side of the adjacent chip, respectively. Therefore, the wireless signal transceiver structure is electrically connected to the circuits in the adjacent chips respectively, thereby realizing the non-contact data communication between the adjacent chips. On this basis, the data communication function of two adjacent chips is achieved, and the interconnection density between chips is increased by developing the side space of the chips.
  • the electrical connection structure includes solder joints and pads that are connected to each other in contact with each other, and the solder joints are protruded on opposite sides of the first die and the second die and connected to the first wire, the pad is disposed on the opposite side of the second die and the first die and is connected to the second wire.
  • the multi-chip module is connected to the circuit in the adjacent chip by arranging contact-connected solder joints and pads on the sides of the adjacent chips, so as to realize the physical connection and electrical connection of the adjacent chips. Furthermore, by utilizing the space on the side of the chip to realize data communication between two adjacent chips, the interconnection density between chips is increased.
  • the electrical connection structure includes a conductive pin and a conductive socket
  • the conductive pin is protruded on the opposite side of the first die and the second die and connects the a first wire
  • the conductive socket is protruded on the side of the second die opposite to the first die and connected to the second wire
  • the conductive socket is provided with a hole
  • the conductive pin is inserted In the hole to make electrical connection between the conductive pin and the conductive socket.
  • the multi-chip module is connected to the circuits in the adjacent chips by arranging contact-connected conductive pins and conductive sockets on the sides of the adjacent chips, so as to realize the physical connection and electrical connection of the adjacent chips. Furthermore, by utilizing the space on the side of the chip to realize data communication between two adjacent chips, the interconnection density between chips is increased.
  • the wireless signal transceiving structure includes a pair of passive transceiving inductive coils, wherein one passive transceiving inductive coil is disposed opposite the first die and the second die The side is connected to the first wire, and the first wire is connected to the circuit in the first bare chip as a transceiver circuit; another passive transmission and reception inductance coil is arranged on the second bare chip and the first bare chip. The opposite side of the chip is connected to the second wire, and the second wire is connected to the circuit in the second die as a transceiver circuit.
  • the multi-chip module is connected to the transceiver circuits in the adjacent chips by setting the inductance coils on the sides of the adjacent chips, so as to realize the non-contact short-range electromagnetic communication between the adjacent chips.
  • the space on the side achieves the function of wireless communication between two adjacent chips, increasing the interconnection density between chips.
  • the two passive transceiver inductors of the pair of passive transceiver inductors are aligned and spaced from each other.
  • the wireless signal transceiving structure is a pair of optical transceiving elements, wherein one optical transceiving element is disposed on the opposite side of the first die and the second die and is connected to the two optical transceiving elements.
  • the first wire, the first wire is connected to the circuit in the first die to be the first optical module processing circuit; another optical transceiver element is arranged on the second die opposite to the first die
  • the side surface is connected to the second wire, and the second wire is connected to the circuit in the second die as a second optical module processing circuit.
  • the multi-chip module is connected to the optical module processing circuit in the adjacent chip by arranging the optical transceiver elements on the side of the adjacent chip, so as to realize the non-contact short-range optical communication between the adjacent chips.
  • the interconnection density between the chips is increased.
  • the two optical transceiver elements of the pair of optical transceiver elements are aligned and spaced from each other.
  • one of the pair of optical transceiver elements is a light-emitting element, and the other is a photosensitive element.
  • each optical transceiver element of the pair of optical transceiver elements integrates the functions of transmitting optical signals and receiving optical signals.
  • a solder joint is provided between the bottom surface of the first die and the package substrate, and the solder joint is connected to the first wire; the bottom surface of the second die is Additional solder joints are provided between the package substrate and the other solder joints, and the additional solder joints are connected to the second wires.
  • the package substrate is provided with a conductive circuit, and the conductive circuit is connected to the solder joints on the bottom surface of the first die and the solder joints on the bottom surface of the second die.
  • the surface of the package substrate facing away from the chip is further provided with solder balls, and the solder balls are connected to the conductive lines in the package substrate.
  • an insulating material layer is respectively covered on the bottom surface and the side surface of the first die, and the insulating material layer insulates and separates the first die and the first wire;
  • the bottom surface and the side surface of the second die are covered with insulating material layers respectively, and the insulating material layers are insulated from the second die and the second wires.
  • the present application further provides an electronic device, including a circuit board and a multi-chip module as in the first aspect and possible embodiments thereof located on the circuit board.
  • FIG. 1 is a schematic diagram of a multi-chip module of the present application.
  • FIG. 2 is a schematic diagram of a multi-chip module according to Embodiment 1 of the present application.
  • FIG. 3A is a schematic view of a side surface of a first die of the multi-chip module shown in FIG. 2 .
  • FIG. 3B is a schematic view of a side surface of the second die of the multi-chip module shown in FIG. 2 .
  • FIG. 4 is a schematic diagram of a multi-chip module according to Embodiment 2 of the present application.
  • FIG. 5 is a schematic diagram of another state of two chips of the multi-chip module shown in FIG. 4 .
  • FIG. 6A is a side view of a first die of the multi-chip module shown in FIG. 4 .
  • FIG. 6B is a schematic view of a side surface of the second die of the multi-chip module shown in FIG. 4 .
  • FIG. 7 is a schematic diagram of another multi-chip module of the present application.
  • FIG. 8A is a schematic diagram of a side surface of a first die of a multi-chip module according to Embodiment 3 of the present application.
  • 8B is a schematic diagram of a side surface of the second die of the multi-chip module according to the third embodiment of the present application.
  • FIG. 9 is a schematic diagram of a multi-chip module according to Embodiment 4 of the present application.
  • FIG. 10A is a schematic view of the side of the first die of the multi-chip module shown in FIG. 9 .
  • FIG. 10B is a schematic view of a side surface of the second die of the multi-chip module shown in FIG. 9 .
  • FIG. 11 is a schematic diagram of an electronic device using a multi-chip module.
  • Multi-chip module 100, 200, 100A, 100B, 200A, 200B Package substrate 10 chip 30 first die 30A second die 30B underside 31 side 33 first wire 35A second wire 35B Electrical connection structure 50 solder joint 51, 55 pad 53 insulating material layer 20 solder balls 60 Conductive needle 52 conductive socket 54 hole 541 Passive Transceiver Inductor Coil 71 Wireless signal transceiver structure 70 Optical transceiver 80 Electronic equipment 500 case 510 circuit board 530
  • an element when referred to as being “electrically connected” to another element, it can be directly on the other element or intervening elements may also be present.
  • an element when it is considered to be “electrically connected” to another element, it can be a contact connection, for example, in the form of a wire connection, or a contactless connection, such as a contactless coupling.
  • the existing package-level multi-chip interconnect architectures are designed between the surface of the chip facing the package substrate and the package substrate, such as arranging conductive lines, transition boards or organic fan-out packaging layers between the chip and the package substrate. etc., to realize the interconnection between chips.
  • the embodiments of the present application provide a novel multi-chip module.
  • the side area of the chip is developed and the interaction between the chips is increased. Even density.
  • a multi-chip module 100 includes a package substrate 10 and at least two chips 30 disposed on a surface of the package substrate 10 .
  • the chip 30 may be a bare die.
  • Each chip 30 has a bottom surface 31 facing the package substrate 10 and a side surface 33 connected to the bottom surface 31 .
  • the side surface 33 is substantially perpendicular to the bottom surface 31 .
  • FIG. 1 only illustrates the interconnection of two chips 30 .
  • the two chips 30 are a first die 30A and a second die 30B, respectively.
  • the first die 30A and the second die 30B are spaced apart from each other and the side surfaces 33 are opposite to each other.
  • the bottom surface 31 of the first die 30A is provided with a first wire 35A, and the first wire 35A is connected to the circuit in the first die 30A at the position of the bottom surface 31 of the first die 30A (Fig. (not shown), and the first wires 35A extend from the bottom surface 31 and the side surface 33 of the first die 30A to the side surface 33 of the first die 30A and the second die 30B opposite to each other.
  • a second wire 35B is disposed on the bottom surface 31 of the second die 30B, and the second wire 35B is connected to the circuit in the second die 30B at the position of the bottom surface 31 of the second die 30B (Fig. (not shown), and the second wire 35B extends from the bottom surface 31 and the side surface 33 of the second die 30B to the side surface 33 of the second die 30B opposite to the first die 30A.
  • An electrical connection structure 50 is provided between the opposite side surfaces 33 of the first die 30A and the second die 30B to electrically connect the first wires 35A and the second wires 35B, thereby realizing the first Interconnection of die 30A to second die 30B.
  • the electrical connection structure 50 includes a pad 51 and a pad 53 that are connected to each other in contact with each other.
  • the solder joints 51 are protruded on the opposite side surfaces 33 of the first die 30A and the second die 30B and are connected to the first wires 35A. That is, one end of the first wire 35A is connected to the circuit (not shown) in the first die 30A, and the other end is connected to the solder joint 51 .
  • the pads 53 are disposed on the side surface 33 of the second die 30B opposite to the first die 30A and are connected to the second wires 35B.
  • one end of the second wire 35B is connected to the circuit (not shown) in the second die 30B, and the other end is connected to the pad 53 .
  • the solder joints 51 and the pads 53 are aligned and connected to each other, so as to realize the electrical connection between the first wire 35A and the second wire 35B, and then the first die 30A and the second wire are electrically connected.
  • Die 30B is interconnected.
  • the first die 30A is provided with a plurality of first wires 35A
  • corresponding to the second die 30B is also provided with a plurality of second wires 35B.
  • a plurality of electrical connection structures 50 are arranged between the first die 30A and the second die 30B, the plurality of first wires 35A and the plurality of second wires 35B are arranged in a one-to-one correspondence, and each pair of first The wires 35A and the second wires 35B are correspondingly provided with an electrical connection structure 50 , that is, a pair of pads 51 and pads 53 that are aligned with each other and are in contact with each other.
  • pads 53 may also be provided on the side 33 of the first die 30A, and the side 33 of the corresponding second die 30B is protruding and aligned with the pads 53 on the first die 30A. Contact the connected pads 51 .
  • the bottom surface 31 and the side surface 33 of the first die 30A are covered with insulating material layers 20 respectively, and the insulating material layers 20 are located between the first die 30A and the first die 30A. between a wire 35A to prevent the first wire 35A and the first die 30A from being short-circuited.
  • the bottom surface 31 and the side surface 33 of the second die 30B are respectively covered with an insulating material layer 20, and the insulating material layer 20 is located between the second die 30B and the second wire 35B, In order to prevent the short-circuit connection between the second wire 35B and the second die 30B.
  • connection between the first wire 35A and the circuit in the first die 30A needs to pass through the insulating material layer 20; the second wire 35B and the circuit in the second die 30B The connection needs to penetrate through the insulating material layer 20 .
  • a plurality of solder joints 55 are disposed between the bottom surface 31 of the first die 30A and the package substrate 10 , and each solder joint 55 can be connected to one of the first wires 35A.
  • a plurality of additional solder joints 55 are disposed between the bottom surface 31 of the second die 30B and the package substrate 10 , and each of the additional solder joints 55 can be connected to one of the second wires 35B.
  • the package substrate 10 is provided with conductive lines 11 , the conductive lines 11 and the solder joints 55 on the bottom surface 31 of the first die 30A and the second die 30B
  • the solder joints 55 on the bottom surface 31 of the bottom surface 31 are electrically connected.
  • the surface of the package substrate 10 facing away from the chip 30 is further provided with a plurality of solder balls 60 , the solder balls 60 are connected to the conductive lines 11 in the package substrate 10 , and the solder balls 60 can be connected with other electronic components.
  • the conductive lines are electrically connected to realize the extraction of the signal of the chip 30 .
  • the size of the solder joints 51 located between the opposite sides 33 of the chip is generally smaller than the size of the solder joints 55 on the bottom surface 31 of the chip 30 , which is soldered on the bottom surface 31 of the chip 30 .
  • the size of the dots 55 is smaller than the size of the solder balls 60 .
  • the material of the packaging substrate 10 may be an organic resin material or a ceramic material, but not limited thereto.
  • the material of the first wire 35A and the second wire 35B can be metal or metal alloy, such as copper, aluminum, titanium, tungsten, nickel, palladium, gold or a metal alloy including one or more of the following metals: Copper, aluminum, titanium, tungsten, nickel, palladium and gold; other conductive materials are also possible.
  • the materials of the solder joints 51 , the solder joints 55 and the solder balls 60 can be conductive metal materials, such as tin, gold, silver, copper and the like.
  • the multi-chip module 100 may further include a plastic sealing layer (not shown) encapsulated on the chip 30 to protect the chip 30 .
  • two adjacent chips 30 are bound together by the bonding technology in which the solder joints 51 on the side surfaces 33 of the adjacent chips 30 are connected to the solder pads 53 to achieve physical bonding.
  • the connection can realize data communication between the two chips 30 at the same time, and can be extended to the interconnection of multiple chips 30 according to the application of the chip side 33 .
  • the multi-chip module 100B of the second embodiment of the present application is basically the same as the multi-chip module 100A of the first embodiment, and also includes the packaging substrate 10 and At least two chips 30 disposed on a surface of the packaging substrate 10; the same features of the two are not repeated here, and the difference between the two is that in this embodiment, the electrical connection structure 50 does not include solder joints and Pads, but include conductive pins 52 and conductive sockets 54, the conductive pins 52 are protruded on the side 33 of the first die 30A and the second die 30B opposite to each other and are connected to the first wires 35A, The conductive socket 54 is protruded on the side surface 33 of the second die 30B opposite to the first die 30A and is connected to the second wire 35B.
  • the conductive socket 54 is provided with a hole 541 for the conductive socket 54 .
  • the needle 52 is inserted into the hole 541 to connect the conductive needle 52 and the conductive socket 54 in contact.
  • the conductive pins 52 and the conductive sockets 54 may be formed on the side surface 33 of the chip by electroplating or surface mounting, but not limited thereto.
  • the conductive needle 52 is cylindrical
  • the hole 541 is a circular hole
  • the size of the hole 541 is matched with the size of the conductive needle 52 , so that When the conductive pin 52 is inserted into the hole 541 , the conductive pin 52 abuts against the hole wall of the hole 541 , so that the conductive pin 52 and the conductive socket 54 are in contact with each other.
  • the size and shape of the hole 541 and the size and shape of the conductive needle 52 can be designed as required, and are not limited to the shape shown in the figure, as long as it is ensured that when the conductive needle 52 is inserted into the hole 541
  • the conductive pin 52 and the conductive socket 54 can be connected in contact with each other.
  • the conductive pins 52 and the conductive sockets 54 are arranged on the side 33 of the chip 30 to cooperate with each other, and the two chips 30 can be electrically connected by inserting the conductive pins 52 into the conductive sockets 54. According to the application of the chip side surface 33 , it can be extended to the interconnection of multiple chips 30 .
  • the electrical connection structure 50 is not limited to the above-mentioned forms of the solder joints 51 and pads 53 , the conductive pins 52 and the conductive sockets 54 , and can also be other various forms that can realize the electrical connection between the first wire 35A and the second wire 35B. Electrical connection structure for sexual connection.
  • another multi-chip module 200 provided by the embodiment of the present application is basically the same as the multi-chip module 100 shown in FIG. At least two chips 30 on the surface; the same features of the two will not be repeated here, and the difference between the two is: in this embodiment, the first die 30A and the second die 30B are opposite to each other.
  • the side surfaces 33 are not provided with an electrical connection structure, but are provided with a wireless signal transceiver structure 70 to enable the first wire 35A and the second wire 35B to achieve a non-contact communication connection, thereby enabling the first wire
  • the chip 30A and the second die 30B realize contactless communication interconnection.
  • the wireless signal transceiving structure 70 in the multi-chip module 200A includes a pair of passive transceiving inductor coils 71 .
  • One of the passive transceiver inductance coils 71 is disposed on the side 33 of the first die 30A and the second die 30B opposite to the second die 30B and is connected to the first wire 35A, and the first wire 35A is in the first die
  • the bottom surface 31 of the chip 30A is connected to the transceiver circuit (not shown) in the first bare chip 30A.
  • one end of the first wire 35A is connected to the passive transceiver coil 71, and the other end is connected to the transceiver circuit (not shown) in the first bare chip 30A.
  • Another passive transceiver coil 71 is disposed on the side 33 of the second die 30B opposite to the first die 30A and is connected to the second wire 35B, and the second wire 35B is connected to the second Transceiver circuitry in die 30B. That is, one end of the second wire 35B is connected to another passive transceiver coil 71, and the other end is connected to the transceiver circuit in the second bare chip 30B.
  • the two passive transceiving inductive coils 71 of the pair of passive transceiving inductive coils 71 are aligned and spaced apart from each other, so as to be able to transmit and receive signals to and from each other. Therefore, the first die 30A and the second die 30B need to maintain a proper distance, so that the first die 30A and the second die 30B can perform the function of wireless communication.
  • a plurality of first wires 35A may be provided on the first die 30A, and a plurality of second wires 35B corresponding to the second die 30B.
  • a plurality of pairs of passive transceiver coils 71 are arranged between the first die 30A and the second die 30B, the plurality of first wires 35A and the plurality of second wires 35B are arranged in a one-to-one correspondence, and each pair of The first wire 35A and the second wire 35B are provided with a pair of passive transceiver coils 71 correspondingly, and the two passive transceiver coils 71 of each pair of passive transceiver coils 71 are aligned and spaced apart from each other, so that each pair The passive transceiving inductive coils 71 can better transmit and receive signals.
  • a pair of passive transceiver inductor coils 71 are arranged on the side surfaces 33 of adjacent chips 30 to perform short-range electromagnetic communication, so as to achieve the function of wireless communication between two adjacent chips 30 .
  • the application of the side surface 33 of the chip 30 can be extended to the interconnection of multiple chips 30 .
  • the scheme is a non-contact multi-chip communication scheme, which achieves the purpose of multi-chip interconnection through high-speed transceivers.
  • the multi-chip module 200B of the fourth embodiment of the present application is basically the same as the multi-chip module 200A of the third embodiment, and also includes the packaging substrate 10 and the multi-chip module 200B disposed on the There are at least two chips 30 on a surface of the package substrate 10, and the first die 30A and the second die 30B are also non-contact communication interconnections. The same features of the two are not repeated here.
  • the wireless signal transceiving structure 70 is a pair of optical transceiving elements 80 , wherein one optical transceiving element 80 is disposed on the side 33 opposite to the first die 30A and the second die 30B and is connected to the first die 30A.
  • a lead 35A, the first lead 35A is connected to the optical module processing circuit (not shown) in the first die 30A; another optical transceiver element 80 is disposed on the second die 30B and the first The opposite side 33 of a die 30A is connected to the second wire 35B, and the second wire 35B is connected to an optical module processing circuit (not shown) in the second die 30B.
  • the two optical transceiver elements 80 of the pair of optical transceiver elements 80 are aligned and spaced apart from each other, so that the pair of optical transceiver elements 80 can better transmit and receive signals to each other.
  • one of the pair of optical transceiver elements 80 is a light-emitting element, such as a light-emitting diode, and the other is a photosensitive element.
  • One end of the first wire 35A is connected to the optical module processing circuit in the first bare chip 30A, and the other end is connected to the light emitting element.
  • One end of the second wire 35B is connected to the optical module processing circuit in the second bare chip 30B, and the other end is connected to the photosensitive element.
  • a photosensitive element may also be provided on the side surface 33 of the first bare chip 30A, and a light-emitting element corresponding to the side surface 33 of the second bare chip 30B is aligned with the photosensitive element on the first bare chip 30A.
  • each optical transceiver element 80 integrates the functions of transmitting optical signals and receiving optical signals.
  • a plurality of first wires 35A may be provided on the first die 30A, and a plurality of second wires 35B corresponding to the second die 30B.
  • a plurality of pairs of optical transceiver elements 80 are arranged between the first die 30A and the second die 30B, the plurality of first wires 35A and the plurality of second wires 35B are arranged in a one-to-one correspondence, and each pair of first A pair of optical transceiver elements 80 are correspondingly provided on the conducting wire 35A and the second conducting wire 35B.
  • light-emitting elements and photosensitive elements respectively connected to different first wires 35A can also be provided on the side 33 of the first die 30A at the same time, and corresponding to the side 33 of the second die 30B are provided with different
  • the second wire 35B connects the light-emitting element and the photosensitive element, and the light-emitting element on the first bare chip 30A and the photosensitive element on the second bare chip 30B are paired with each other, and each pair of light-emitting element and photosensitive element Aligned with each other, the photosensitive elements on the first die 30A and the light emitting elements on the second die 30B are paired with each other, and the light emitting elements and the photosensitive elements of each pair are aligned with each other.
  • a pair of optical transceiver elements 80 are arranged on the side surfaces 33 of adjacent chips 30 to perform short-range optical communication, so as to achieve the function of wireless communication between the two adjacent chips 30, and the non-contact multi-chip
  • the interconnection communication scheme can effectively improve the chip interconnection bandwidth due to the small interference between optical signals and the large bandwidth.
  • the wireless signal transceiving structure is not limited to the above-mentioned passive transceiving inductive coil 71 and optical transceiving element 80 , but can also be other various types that can realize non-contact communication between the first wire 35A and the second wire 35B. Connected wireless signal transceiver structure.
  • the present application further provides an electronic device 500 , the electronic device 500 includes a housing 510 and a circuit board 530 located in the housing 510 , and at least one of the above-mentioned multi-chip modules 100 and 200 is disposed in the circuit on the plate 530 and within the housing 510 .
  • the electronic device 500 shown in FIG. 11 is a mobile phone, but is not limited to a mobile phone, and the electronic device can be various electronic devices that need to be provided with chips.

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Abstract

Provided in the present application is a multi-chip module, comprising a package substrate and at least two chips, which are arranged on the package substrate, wherein each chip has a bottom face, which faces the package substrate, and a side face, which is connected to the bottom face; the at least two chips comprise a first die and a second die, which are adjacent to each other, are spaced apart from each other, and have opposite side faces; a first wire is arranged on a bottom face of the first die; the first wire is connected to a circuit in the first die and extends to the side face of the first die that faces the second die; a second wire is arranged on a bottom face of the second die; the second wire is connected to a circuit in the second die and extends to the side face of the second die that faces the first die; and an electrical connection structure is arranged between the opposite side faces of the first die and the second die, so that the first wire and the second wire are electrically connected to each other. Multi-chip interconnection is performed by using the space of side faces of chips, such that the interconnection density between the chips is increased on the basis that the area of bottom faces of the chips is not occupied. Further provided in the present application is an electronic device having the multi-chip module.

Description

多芯片模组及具有该多芯片模组的电子设备Multi-chip module and electronic equipment having the same 技术领域technical field
本申请涉及一种多芯片模组及具有该多芯片模组的电子设备。The present application relates to a multi-chip module and an electronic device having the multi-chip module.
背景技术Background technique
随着信息社会的发展,数据的产生呈现指数级的爆发,这对数据处理能力的要求更加严苛。大数据时代,对芯片的高性能需求日益增加,增加芯片的带宽密度,是业界的研究方向之一。多芯片模组(Multi-chip Module,MCM)是将多个裸片(die)集成在同一基板上的封装技术,相比于传统的封装工艺,它具有更高的封装密度,从而实现更大的带宽密度。With the development of the information society, the generation of data presents an exponential explosion, which requires more stringent data processing capabilities. In the era of big data, the demand for high performance of chips is increasing day by day. Increasing the bandwidth density of chips is one of the research directions in the industry. Multi-chip Module (MCM) is a packaging technology that integrates multiple dies on the same substrate. bandwidth density.
目前封装级多芯片互连架构,主要有以下几种:(1)芯片直接通过基板走线互连;(2)通过在芯片与基板之间设置转接板(Interposer)实现的2.5D封装互连,该方案需要硅转接板以及穿透硅通孔(Through silicon via,TSV)技术;(3)通过在芯片与基板之间设置有机扇出封装层,把多个die放置于有机扇出封装层上,信号通过有机扇出封装层内再布线层进行die间互连。上述这几种方式均是通过利用芯片朝向基板的底面空间进行芯片互连。At present, the package-level multi-chip interconnection architecture mainly includes the following: (1) the chips are directly interconnected through the substrate wiring; (2) the 2.5D package interconnection realized by setting up an interposer between the chip and the substrate This solution requires a silicon interposer and through-silicon via (TSV) technology; (3) by placing an organic fan-out packaging layer between the chip and the substrate, multiple dies are placed on the organic fan-out On the packaging layer, the signals are interconnected between dies through the redistribution layer in the organic fan-out packaging layer. All of the above-mentioned methods use the space of the chip facing the bottom surface of the substrate to perform chip interconnection.
发明内容SUMMARY OF THE INVENTION
有鉴于此,有必要提供一种结构新颖的多芯片模组,通过利用芯片侧面的空间进行多芯片互连。In view of this, it is necessary to provide a multi-chip module with novel structure, which can perform multi-chip interconnection by utilizing the space on the side of the chip.
第一方面,本申请提供一种多芯片模组,包括:In the first aspect, the application provides a kind of multi-chip module, comprising:
封装基板;package substrate;
设置在所述封装基板上的至少两个芯片,每一个芯片具有朝向所述封装基板的底面以及连接所述底面的侧面;at least two chips disposed on the packaging substrate, each chip having a bottom surface facing the packaging substrate and a side surface connected to the bottom surface;
所述至少两个芯片包括相邻间隔且侧面相对的第一裸片和第二裸片,所述第一裸片的底面上设置有第一导线,所述第一导线连接所述第一裸片中的电路并在所述第一裸片的底面和侧面延伸到达所述第一裸片与所述第二裸片相对的侧面,所述第二裸片的底面上设置有第二导线,所述第二导线连接所述第二裸片中的电路并在所述第二裸片的底面和侧面延伸到达所述第二裸片与所述第一裸片相对的侧面;The at least two chips include a first die and a second die that are adjacently spaced and have opposite sides, a first wire is provided on the bottom surface of the first die, and the first wire is connected to the first die The circuit in the chip extends from the bottom surface and side surface of the first die to the side opposite to the second die, and the bottom surface of the second die is provided with a second wire, the second wire is connected to the circuit in the second die and extends on the bottom surface and the side of the second die to the side of the second die opposite to the first die;
所述第一裸片和所述第二裸片相对的侧面之间设置有电连接结构以使所述第一导线和所述第二导线电性连接;或者所述第一裸片和所述第二裸片相对的侧面之间设置有无线信号收发结构以使所述第一导线和所述第二导线无线通信连接。An electrical connection structure is provided between the opposite sides of the first die and the second die to electrically connect the first wire and the second wire; or the first die and the A wireless signal transceiving structure is disposed between the opposite sides of the second die, so that the first wire and the second wire are wirelessly communicatively connected.
可以看出,第一方面提供的一种多芯片模组,通过在相邻芯片的侧面设置电连接结构分别与芯片表面延伸的导线连接,从而使电连接结构分别电性连接相邻芯片中的电路,进而实现相邻芯片物理上的连接以及电性连接;第 一方面还提供另外一种多芯片模组,通过在相邻芯片的侧面设置无线信号收发结构分别与芯片表面延伸的导线连接,从而使无线信号收发结构分别与相邻芯片中的电路电性连接,进而实现相邻芯片间的非接触式的数据通信,上述两种方式均通过利用芯片侧面的空间且不占用芯片底面面积的基础上达到相邻两颗芯片的数据通信的功能,通过开发芯片的侧面空间,增加了芯片间互连密度。It can be seen that, in the multi-chip module provided by the first aspect, the electrical connection structures are arranged on the sides of adjacent chips to be connected to the wires extending from the surface of the chips respectively, so that the electrical connection structures are respectively electrically connected to the adjacent chips. The first aspect also provides another multi-chip module, which is connected to the wires extending from the surface of the chip by arranging the wireless signal transceiver structure on the side of the adjacent chip, respectively. Therefore, the wireless signal transceiver structure is electrically connected to the circuits in the adjacent chips respectively, thereby realizing the non-contact data communication between the adjacent chips. On this basis, the data communication function of two adjacent chips is achieved, and the interconnection density between chips is increased by developing the side space of the chips.
结合第一方面,在一些实施例中,所述电连接结构包括相互接触连接的焊点和焊盘,所述焊点凸设在所述第一裸片与所述第二裸片相对的侧面且连接所述第一导线,所述焊盘设置在所述第二裸片与所述第一裸片相对的侧面且连接所述第二导线。With reference to the first aspect, in some embodiments, the electrical connection structure includes solder joints and pads that are connected to each other in contact with each other, and the solder joints are protruded on opposite sides of the first die and the second die and connected to the first wire, the pad is disposed on the opposite side of the second die and the first die and is connected to the second wire.
可以看出,所述多芯片模组,通过在相邻芯片的侧面设置接触连接的焊点和焊盘分别与相邻芯片中的电路连接,实现相邻芯片物理上的连接以及电性连接,进而通过利用芯片侧面的空间实现相邻两颗芯片之间的数据通信,增加了芯片间互连密度。It can be seen that the multi-chip module is connected to the circuit in the adjacent chip by arranging contact-connected solder joints and pads on the sides of the adjacent chips, so as to realize the physical connection and electrical connection of the adjacent chips. Furthermore, by utilizing the space on the side of the chip to realize data communication between two adjacent chips, the interconnection density between chips is increased.
结合第一方面,在一些实施例中,所述电连接结构包括导电针头和导电插座,所述导电针头凸设在所述第一裸片与所述第二裸片相对的侧面且连接所述第一导线,所述导电插座凸设在所述第二裸片与所述第一裸片相对的侧面且连接所述第二导线,所述导电插座上开设有孔,所述导电针头插设在所述孔中以使导电针头和导电插座接触电连接。With reference to the first aspect, in some embodiments, the electrical connection structure includes a conductive pin and a conductive socket, the conductive pin is protruded on the opposite side of the first die and the second die and connects the a first wire, the conductive socket is protruded on the side of the second die opposite to the first die and connected to the second wire, the conductive socket is provided with a hole, and the conductive pin is inserted In the hole to make electrical connection between the conductive pin and the conductive socket.
可以看出,所述多芯片模组,通过在相邻芯片的侧面设置接触连接的导电针头和导电插座分别与相邻芯片中的电路连接,实现相邻芯片物理上的连接以及电性连接,进而通过利用芯片侧面的空间实现相邻两颗芯片之间的数据通信,增加了芯片间互连密度。It can be seen that the multi-chip module is connected to the circuits in the adjacent chips by arranging contact-connected conductive pins and conductive sockets on the sides of the adjacent chips, so as to realize the physical connection and electrical connection of the adjacent chips. Furthermore, by utilizing the space on the side of the chip to realize data communication between two adjacent chips, the interconnection density between chips is increased.
结合第一方面,在一些实施例中,所述无线信号收发结构包括一对无源收发电感线圈,其中一个无源收发电感线圈设置在所述第一裸片与所述第二裸片相对的侧面且连接所述第一导线,所述第一导线连接所述第一裸片中的电路为收发电路;另外的一个无源收发电感线圈设置在所述第二裸片与所述第一裸片相对的侧面且连接所述第二导线,所述第二导线连接所述第二裸片中的电路为收发电路。With reference to the first aspect, in some embodiments, the wireless signal transceiving structure includes a pair of passive transceiving inductive coils, wherein one passive transceiving inductive coil is disposed opposite the first die and the second die The side is connected to the first wire, and the first wire is connected to the circuit in the first bare chip as a transceiver circuit; another passive transmission and reception inductance coil is arranged on the second bare chip and the first bare chip. The opposite side of the chip is connected to the second wire, and the second wire is connected to the circuit in the second die as a transceiver circuit.
可以看出,所述多芯片模组,通过相邻芯片的侧面设置电感线圈分别与相邻芯片中的收发电路连接,实现相邻芯片间的非接触式的近距离电磁通信,从而通过利用芯片侧面的空间达到相邻两颗芯片的无线通信的功能,增加了芯片间互连密度。It can be seen that the multi-chip module is connected to the transceiver circuits in the adjacent chips by setting the inductance coils on the sides of the adjacent chips, so as to realize the non-contact short-range electromagnetic communication between the adjacent chips. The space on the side achieves the function of wireless communication between two adjacent chips, increasing the interconnection density between chips.
结合第一方面,在一些实施例中,该对无源收发电感线圈的两个无源收发电感线圈相互对准且间隔。In conjunction with the first aspect, in some embodiments, the two passive transceiver inductors of the pair of passive transceiver inductors are aligned and spaced from each other.
结合第一方面,在一些实施例中,所述无线信号收发结构为一对光收发元件,其中一个光收发元件设置在所述第一裸片与所述第二裸片相对的侧面且连接所述第一导线,所述第一导线连接所述第一裸片中的电路为第一光模块处理电路;另外的一个光收发元件设置在所述第二裸片与所述第一裸片相 对的侧面且连接所述第二导线,所述第二导线连接所述第二裸片中的电路为第二光模块处理电路。With reference to the first aspect, in some embodiments, the wireless signal transceiving structure is a pair of optical transceiving elements, wherein one optical transceiving element is disposed on the opposite side of the first die and the second die and is connected to the two optical transceiving elements. The first wire, the first wire is connected to the circuit in the first die to be the first optical module processing circuit; another optical transceiver element is arranged on the second die opposite to the first die The side surface is connected to the second wire, and the second wire is connected to the circuit in the second die as a second optical module processing circuit.
可以看出,所述多芯片模组,通过相邻芯片的侧面设置光收发元件分别与相邻芯片中的光模块处理电路连接,实现相邻芯片间的非接触式的近距离光通信,从而通过利用芯片侧面的空间达到相邻两颗芯片的无线通信的功能,增加了芯片间互连密度。It can be seen that the multi-chip module is connected to the optical module processing circuit in the adjacent chip by arranging the optical transceiver elements on the side of the adjacent chip, so as to realize the non-contact short-range optical communication between the adjacent chips. By utilizing the space on the side of the chip to achieve the function of wireless communication between two adjacent chips, the interconnection density between the chips is increased.
结合第一方面,在一些实施例中,该对光收发元件的两个光收发元件相互对准且间隔。In conjunction with the first aspect, in some embodiments, the two optical transceiver elements of the pair of optical transceiver elements are aligned and spaced from each other.
结合第一方面,在一些实施例中,该对光收发元件的其中一个为发光元件,另外一个为感光元件。With reference to the first aspect, in some embodiments, one of the pair of optical transceiver elements is a light-emitting element, and the other is a photosensitive element.
结合第一方面,在一些实施例中,该对光收发元件的每一个光收发元件集成有发射光信号和接收光信号的功能。In conjunction with the first aspect, in some embodiments, each optical transceiver element of the pair of optical transceiver elements integrates the functions of transmitting optical signals and receiving optical signals.
结合第一方面,在一些实施例中,所述第一裸片的底面与所述封装基板之间设置有焊点,所述焊点连接所述第一导线;所述第二裸片的底面与所述封装基板之间设置有另外的焊点,所述另外的焊点连接所述第二导线。With reference to the first aspect, in some embodiments, a solder joint is provided between the bottom surface of the first die and the package substrate, and the solder joint is connected to the first wire; the bottom surface of the second die is Additional solder joints are provided between the package substrate and the other solder joints, and the additional solder joints are connected to the second wires.
结合第一方面,在一些实施例中,所述封装基板中设置有导电线路,所述导电线路与所述第一裸片的底面上的焊点和所述第二裸片的底面上的焊点电性连接;所述封装基板背离所述芯片的表面还设置有焊球,所述焊球连接所述封装基板中的导电线路。With reference to the first aspect, in some embodiments, the package substrate is provided with a conductive circuit, and the conductive circuit is connected to the solder joints on the bottom surface of the first die and the solder joints on the bottom surface of the second die. The surface of the package substrate facing away from the chip is further provided with solder balls, and the solder balls are connected to the conductive lines in the package substrate.
结合第一方面,在一些实施例中,所述第一裸片的底面和侧面上均分别覆盖有绝缘材料层,所述绝缘材料层绝缘间隔所述第一裸片与所述第一导线;所述第二裸片的底面和侧面上均分别覆盖有绝缘材料层,所述绝缘材料层绝缘间隔所述第二裸片与所述第二导线。With reference to the first aspect, in some embodiments, an insulating material layer is respectively covered on the bottom surface and the side surface of the first die, and the insulating material layer insulates and separates the first die and the first wire; The bottom surface and the side surface of the second die are covered with insulating material layers respectively, and the insulating material layers are insulated from the second die and the second wires.
第二方面,本申请还提供一种电子设备,包括电路板和位于所述电路板上的如第一方面及其可能的实施例中的的多芯片模组。In a second aspect, the present application further provides an electronic device, including a circuit board and a multi-chip module as in the first aspect and possible embodiments thereof located on the circuit board.
附图说明Description of drawings
图1为本申请的多芯片模组的示意图。FIG. 1 is a schematic diagram of a multi-chip module of the present application.
图2为本申请实施例一的多芯片模组的示意图。FIG. 2 is a schematic diagram of a multi-chip module according to Embodiment 1 of the present application.
图3A为图2所示多芯片模组的第一裸片的侧面的示意图。FIG. 3A is a schematic view of a side surface of a first die of the multi-chip module shown in FIG. 2 .
图3B为图2所示多芯片模组的第二裸片的侧面的示意图。FIG. 3B is a schematic view of a side surface of the second die of the multi-chip module shown in FIG. 2 .
图4为本申请实施例二的多芯片模组的示意图。FIG. 4 is a schematic diagram of a multi-chip module according to Embodiment 2 of the present application.
图5为图4所示多芯片模组的两个芯片的另一状态的示意图。FIG. 5 is a schematic diagram of another state of two chips of the multi-chip module shown in FIG. 4 .
图6A为图4所示多芯片模组的第一裸片的侧面的示意图。FIG. 6A is a side view of a first die of the multi-chip module shown in FIG. 4 .
图6B为图4所示多芯片模组的第二裸片的侧面的示意图。FIG. 6B is a schematic view of a side surface of the second die of the multi-chip module shown in FIG. 4 .
图7为本申请另一种多芯片模组的示意图。FIG. 7 is a schematic diagram of another multi-chip module of the present application.
图8A为本申请实施例三的多芯片模组的第一裸片的侧面的示意图。8A is a schematic diagram of a side surface of a first die of a multi-chip module according to Embodiment 3 of the present application.
图8B为本申请实施例三的多芯片模组的第二裸片的侧面的示意图。8B is a schematic diagram of a side surface of the second die of the multi-chip module according to the third embodiment of the present application.
图9为本申请实施例四的多芯片模组的示意图。FIG. 9 is a schematic diagram of a multi-chip module according to Embodiment 4 of the present application.
图10A为图9所示多芯片模组的第一裸片的侧面的示意图。FIG. 10A is a schematic view of the side of the first die of the multi-chip module shown in FIG. 9 .
图10B为图9所示多芯片模组的第二裸片的侧面的示意图。FIG. 10B is a schematic view of a side surface of the second die of the multi-chip module shown in FIG. 9 .
图11为应用多芯片模组的电子设备的示意图。FIG. 11 is a schematic diagram of an electronic device using a multi-chip module.
主要元件符号说明Description of main component symbols
多芯片模组 Multi-chip module 100、200、100A、100B、200A、200B100, 200, 100A, 100B, 200A, 200B
封装基板Package substrate 1010
芯片 chip 3030
第一裸片 first die 30A30A
第二裸片second die 30B 30B
底面underside 3131
侧面 side 3333
第一导线 first wire 35A35A
第二导线 second wire 35B35B
电连接结构Electrical connection structure 5050
焊点solder joint 51、5551, 55
焊盘 pad 5353
绝缘材料层insulating material layer 2020
焊球 solder balls 6060
导电针头 Conductive needle 5252
导电插座 conductive socket 5454
hole 541541
无源收发电感线圈Passive Transceiver Inductor Coil 7171
无线信号收发结构Wireless signal transceiver structure 7070
光收发元件 Optical transceiver 8080
电子设备 Electronic equipment 500500
壳体 case 510510
电路板 circuit board 530530
如下具体实施方式将结合上述附图进一步说明本申请。The following specific embodiments will further illustrate the present application in conjunction with the above drawings.
具体实施方式Detailed ways
下面将结合本申请实施例中的附图,对本申请实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本申请一部分实施例,而不是全部的实施例。基于本申请中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本申请保护的范围。The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, but not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present application.
需要说明的是,当一个元件被称为“电连接”另一个元件,它可以直接在另一个元件上或者也可以存在居中的元件。当一个元件被认为是“电连接”另 一个元件,它可以是接触连接,例如,可以是导线连接的方式,也可以是非接触式连接,例如,可以是非接触式耦合的方式。It should be noted that when an element is referred to as being "electrically connected" to another element, it can be directly on the other element or intervening elements may also be present. When an element is considered to be "electrically connected" to another element, it can be a contact connection, for example, in the form of a wire connection, or a contactless connection, such as a contactless coupling.
除非另有定义,本文所使用的所有的技术和科学术语与属于本申请的技术领域的技术人员通常理解的含义相同。本文中在本申请的说明书中所使用的术语只是为了描述具体的实施例的目的,不是旨在于限制本申请。Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the technical field to which this application belongs. The terms used herein in the specification of the application are for the purpose of describing specific embodiments only, and are not intended to limit the application.
下面结合附图,对本申请的一些实施方式作详细说明。在不冲突的情况下,下述的实施例及实施例中的特征可以相互组合。Some embodiments of the present application will be described in detail below with reference to the accompanying drawings. The embodiments described below and features in the embodiments may be combined with each other without conflict.
现有的封装级多芯片互连架构,均是通过在芯片朝向封装基板的表面与封装基板之间进行设计,例如在芯片与封装基板之间设置导电线路、转接板或有机扇出封装层等,实现芯片之间的互连。The existing package-level multi-chip interconnect architectures are designed between the surface of the chip facing the package substrate and the package substrate, such as arranging conductive lines, transition boards or organic fan-out packaging layers between the chip and the package substrate. etc., to realize the interconnection between chips.
本申请实施例提供一种新颖的多芯片模组,通过利用芯片侧面的空间进行多芯片的互连,在不消耗/占用芯片底面面积的基础上,通过开发芯片侧面面积,增加了芯片间互连密度。The embodiments of the present application provide a novel multi-chip module. By utilizing the space on the side of the chip for interconnection of multiple chips, on the basis of not consuming/occupying the area of the bottom surface of the chip, the side area of the chip is developed and the interaction between the chips is increased. Even density.
请参阅图1,本申请实施例的多芯片模组100包括封装基板10和设置在所述封装基板10一表面上的至少两个芯片30。所述芯片30可为裸片。每一个芯片30具有朝向所述封装基板10的底面31以及连接所述底面31的侧面33。本实施例中,侧面33与底面31大致垂直。Referring to FIG. 1 , a multi-chip module 100 according to an embodiment of the present application includes a package substrate 10 and at least two chips 30 disposed on a surface of the package substrate 10 . The chip 30 may be a bare die. Each chip 30 has a bottom surface 31 facing the package substrate 10 and a side surface 33 connected to the bottom surface 31 . In this embodiment, the side surface 33 is substantially perpendicular to the bottom surface 31 .
为呈现清楚,图1仅示意出两个芯片30的互连。两个芯片30分别为第一裸片30A和第二裸片30B。如图1所示,所述第一裸片30A和第二裸片30B相邻间隔且侧面33相对。所述第一裸片30A的底面31上设置有第一导线35A,所述第一导线35A在所述第一裸片30A的底面31的位置连接所述第一裸片30A中的电路(图未示),且所述第一导线35A在所述第一裸片30A的底面31和侧面33延伸到达所述第一裸片30A与所述第二裸片30B相对的侧面33。所述第二裸片30B的底面31上设置有第二导线35B,所述第二导线35B在所述第二裸片30B的底面31的位置连接所述第二裸片30B中的电路(图未示),且所述第二导线35B在所述第二裸片30B的底面31和侧面33延伸到达所述第二裸片30B与所述第一裸片30A相对的侧面33。所述第一裸片30A和所述第二裸片30B相对的侧面33之间设置有电连接结构50以使所述第一导线35A与所述第二导线35B电性连接,进而实现第一裸片30A与第二裸片30B的互连。For clarity of presentation, FIG. 1 only illustrates the interconnection of two chips 30 . The two chips 30 are a first die 30A and a second die 30B, respectively. As shown in FIG. 1 , the first die 30A and the second die 30B are spaced apart from each other and the side surfaces 33 are opposite to each other. The bottom surface 31 of the first die 30A is provided with a first wire 35A, and the first wire 35A is connected to the circuit in the first die 30A at the position of the bottom surface 31 of the first die 30A (Fig. (not shown), and the first wires 35A extend from the bottom surface 31 and the side surface 33 of the first die 30A to the side surface 33 of the first die 30A and the second die 30B opposite to each other. A second wire 35B is disposed on the bottom surface 31 of the second die 30B, and the second wire 35B is connected to the circuit in the second die 30B at the position of the bottom surface 31 of the second die 30B (Fig. (not shown), and the second wire 35B extends from the bottom surface 31 and the side surface 33 of the second die 30B to the side surface 33 of the second die 30B opposite to the first die 30A. An electrical connection structure 50 is provided between the opposite side surfaces 33 of the first die 30A and the second die 30B to electrically connect the first wires 35A and the second wires 35B, thereby realizing the first Interconnection of die 30A to second die 30B.
参阅图2、图3A和图3B所示的本申请第一实施例的多芯片模组100A,本实施例中,所述电连接结构50包括互相接触连接的焊点51和焊盘53。所述焊点51凸设在所述第一裸片30A与所述第二裸片30B相对的侧面33且连接所述第一导线35A。即,所述第一导线35A的一端连接所述第一裸片30A中的电路(图未示),另一端连接所述焊点51。所述焊盘53设置在所述第二裸片30B与所述第一裸片30A相对的侧面33且连接所述第二导线35B。即,所述第二导线35B的一端连接所述第二裸片30B中的电路(图未示),另一端连接所述焊盘53。所述焊点51和所述焊盘53相互对准且接触连接,从而实现所述第一导线35A和所述第二导线35B电性连接,进而所述第一裸片 30A与所述第二裸片30B互连。Referring to the multi-chip module 100A according to the first embodiment of the present application shown in FIG. 2 , FIG. 3A and FIG. 3B , in this embodiment, the electrical connection structure 50 includes a pad 51 and a pad 53 that are connected to each other in contact with each other. The solder joints 51 are protruded on the opposite side surfaces 33 of the first die 30A and the second die 30B and are connected to the first wires 35A. That is, one end of the first wire 35A is connected to the circuit (not shown) in the first die 30A, and the other end is connected to the solder joint 51 . The pads 53 are disposed on the side surface 33 of the second die 30B opposite to the first die 30A and are connected to the second wires 35B. That is, one end of the second wire 35B is connected to the circuit (not shown) in the second die 30B, and the other end is connected to the pad 53 . The solder joints 51 and the pads 53 are aligned and connected to each other, so as to realize the electrical connection between the first wire 35A and the second wire 35B, and then the first die 30A and the second wire are electrically connected. Die 30B is interconnected.
可以理解的,如图3A和图3B所示,所述第一裸片30A上设置有多条第一导线35A,对应所述第二裸片30B上也设置多条第二导线35B,所述第一裸片30A和所述第二裸片30B之间设置多个电连接结构50,所述多条第一导线35A与所述多条第二导线35B一一对应设置且每一对第一导线35A和第二导线35B对应设置有一个电连接结构50,即一对相互对准且接触连接的焊点51和焊盘53。It can be understood that, as shown in FIG. 3A and FIG. 3B , the first die 30A is provided with a plurality of first wires 35A, and corresponding to the second die 30B is also provided with a plurality of second wires 35B. A plurality of electrical connection structures 50 are arranged between the first die 30A and the second die 30B, the plurality of first wires 35A and the plurality of second wires 35B are arranged in a one-to-one correspondence, and each pair of first The wires 35A and the second wires 35B are correspondingly provided with an electrical connection structure 50 , that is, a pair of pads 51 and pads 53 that are aligned with each other and are in contact with each other.
可以理解的,所述第一裸片30A的侧面33上也可设置焊盘53,对应第二裸片30B的侧面33上凸设与所述第一裸片30A上的焊盘53对准且接触连接的焊点51。It can be understood that pads 53 may also be provided on the side 33 of the first die 30A, and the side 33 of the corresponding second die 30B is protruding and aligned with the pads 53 on the first die 30A. Contact the connected pads 51 .
如图1和图2所示,所述第一裸片30A的底面31和侧面33上均分别覆盖有绝缘材料层20,所述绝缘材料层20位于所述第一裸片30A与所述第一导线35A之间,以防止所述第一导线35A与所述第一裸片30A发生短路连接。同样的,所述第二裸片30B的底面31和侧面33上均分别覆盖有绝缘材料层20,所述绝缘材料层20位于所述第二裸片30B与所述第二导线35B之间,以防止所述第二导线35B与所述第二裸片30B发生短路连接。因此,虽图为示,所述第一导线35A与所述第一裸片30A中的电路的连接需贯穿绝缘材料层20;所述第二导线35B与所述第二裸片30B中的电路的连接需贯穿绝缘材料层20。As shown in FIG. 1 and FIG. 2 , the bottom surface 31 and the side surface 33 of the first die 30A are covered with insulating material layers 20 respectively, and the insulating material layers 20 are located between the first die 30A and the first die 30A. between a wire 35A to prevent the first wire 35A and the first die 30A from being short-circuited. Similarly, the bottom surface 31 and the side surface 33 of the second die 30B are respectively covered with an insulating material layer 20, and the insulating material layer 20 is located between the second die 30B and the second wire 35B, In order to prevent the short-circuit connection between the second wire 35B and the second die 30B. Therefore, although shown in the figure, the connection between the first wire 35A and the circuit in the first die 30A needs to pass through the insulating material layer 20; the second wire 35B and the circuit in the second die 30B The connection needs to penetrate through the insulating material layer 20 .
如图1和图2所示,所述第一裸片30A的底面31与所述封装基板10之间设置有多个焊点55,每一个焊点55可连接一条所述第一导线35A。所述第二裸片30B的底面31与所述封装基板10之间设置有另外的多个焊点55,每一个所述另外的焊点55可连接一条所述第二导线35B。As shown in FIG. 1 and FIG. 2 , a plurality of solder joints 55 are disposed between the bottom surface 31 of the first die 30A and the package substrate 10 , and each solder joint 55 can be connected to one of the first wires 35A. A plurality of additional solder joints 55 are disposed between the bottom surface 31 of the second die 30B and the package substrate 10 , and each of the additional solder joints 55 can be connected to one of the second wires 35B.
如图1和图2所示,所述封装基板10中设置有导电线路11,所述导电线路11与所述第一裸片30A的底面31上的焊点55和所述第二裸片30B的底面31上的焊点55电性连接。所述封装基板10背离所述芯片30的表面还设置有多个焊球60,所述焊球60连接所述封装基板10中的导电线路11,所述焊球60可与其他的电子元器件、导电线路电性连接以实现芯片30信号的引出。As shown in FIG. 1 and FIG. 2 , the package substrate 10 is provided with conductive lines 11 , the conductive lines 11 and the solder joints 55 on the bottom surface 31 of the first die 30A and the second die 30B The solder joints 55 on the bottom surface 31 of the bottom surface 31 are electrically connected. The surface of the package substrate 10 facing away from the chip 30 is further provided with a plurality of solder balls 60 , the solder balls 60 are connected to the conductive lines 11 in the package substrate 10 , and the solder balls 60 can be connected with other electronic components. , The conductive lines are electrically connected to realize the extraction of the signal of the chip 30 .
本实施例中,由于芯片30的尺寸较小,通常位于芯片相对的侧面33之间的焊点51的尺寸小于芯片30的底面31上焊点55的尺寸,所述芯片30的底面31上焊点55的尺寸小于所述焊球60的尺寸。In this embodiment, due to the small size of the chip 30 , the size of the solder joints 51 located between the opposite sides 33 of the chip is generally smaller than the size of the solder joints 55 on the bottom surface 31 of the chip 30 , which is soldered on the bottom surface 31 of the chip 30 . The size of the dots 55 is smaller than the size of the solder balls 60 .
所述封装基板10的材质可为有机树脂材料,也可为陶瓷材料,但不以此为限。The material of the packaging substrate 10 may be an organic resin material or a ceramic material, but not limited thereto.
所述第一导线35A和所述第二导线35B的材质可为金属或金属合金,例如铜、铝、钛、钨、镍、钯、金或包括以下金属中的一个或多个的金属合金:铜、铝、钛、钨、镍、钯和金;其他导电材料也是可能的。The material of the first wire 35A and the second wire 35B can be metal or metal alloy, such as copper, aluminum, titanium, tungsten, nickel, palladium, gold or a metal alloy including one or more of the following metals: Copper, aluminum, titanium, tungsten, nickel, palladium and gold; other conductive materials are also possible.
所述焊点51、焊点55和焊球60的材质可为导电金属材料,如锡、金、银、铜等。The materials of the solder joints 51 , the solder joints 55 and the solder balls 60 can be conductive metal materials, such as tin, gold, silver, copper and the like.
可以理解的,所述多芯片模组100还可包括封装在芯片30上的塑封层(图未示),以起到保护芯片30的作用。It can be understood that the multi-chip module 100 may further include a plastic sealing layer (not shown) encapsulated on the chip 30 to protect the chip 30 .
本申请第一实施例的多芯片模组100A,通过相邻芯片30的侧面33上焊点51与焊盘53连接的绑定技术将相邻的两颗芯片30绑定在一起实现物理上的连接,同时实现两颗芯片30之间的数据通信,根据芯片侧面33的应用情况,可扩展到多颗芯片30的互连。In the multi-chip module 100A according to the first embodiment of the present application, two adjacent chips 30 are bound together by the bonding technology in which the solder joints 51 on the side surfaces 33 of the adjacent chips 30 are connected to the solder pads 53 to achieve physical bonding. The connection can realize data communication between the two chips 30 at the same time, and can be extended to the interconnection of multiple chips 30 according to the application of the chip side 33 .
请参阅图4、图5、图6A和图6B所示的本申请第二实施例的多芯片模组100B,其与第一实施例的多芯片模组100A基本相同,也包括封装基板10和设置在所述封装基板10一表面上的至少两个芯片30;二者相同的特征在此不再赘述,二者的区别在于:本实施例中,所述电连接结构50不包括焊点和焊盘,而是包括导电针头52和导电插座54,所述导电针头52凸设在所述第一裸片30A与所述第二裸片30B相对的侧面33且连接所述第一导线35A,所述导电插座54凸设在所述第二裸片30B与所述第一裸片30A相对的侧面33且连接所述第二导线35B,所述导电插座54上开设有孔541,所述导电针头52插设在所述孔541中以使导电针头52和导电插座54接触连接。所述导电针头52和所述导电插座54可通过电镀或表面贴装的方式形成在芯片的侧面33,但不以此为限。Please refer to FIG. 4 , FIG. 5 , FIG. 6A and FIG. 6B . The multi-chip module 100B of the second embodiment of the present application is basically the same as the multi-chip module 100A of the first embodiment, and also includes the packaging substrate 10 and At least two chips 30 disposed on a surface of the packaging substrate 10; the same features of the two are not repeated here, and the difference between the two is that in this embodiment, the electrical connection structure 50 does not include solder joints and Pads, but include conductive pins 52 and conductive sockets 54, the conductive pins 52 are protruded on the side 33 of the first die 30A and the second die 30B opposite to each other and are connected to the first wires 35A, The conductive socket 54 is protruded on the side surface 33 of the second die 30B opposite to the first die 30A and is connected to the second wire 35B. The conductive socket 54 is provided with a hole 541 for the conductive socket 54 . The needle 52 is inserted into the hole 541 to connect the conductive needle 52 and the conductive socket 54 in contact. The conductive pins 52 and the conductive sockets 54 may be formed on the side surface 33 of the chip by electroplating or surface mounting, but not limited thereto.
如图6A和图6B所示,本实施例中,所述导电针头52为圆柱形,所述孔541为圆孔,且所述孔541的尺寸与所述导电针头52的尺寸相配合,以使导电针头52插设在所述孔541中时,所述导电针头52抵持所述孔541的孔壁,从而实现导电针头52和导电插座54接触连接。可以理解的,所述孔541的尺寸和形状以及所述导电针头52的尺寸和形状可根据需要进行设计,不限于图示的形状,只要保证当导电针头52插设在所述孔541中时导电针头52和导电插座54能够接触连接即可。As shown in FIG. 6A and FIG. 6B , in this embodiment, the conductive needle 52 is cylindrical, the hole 541 is a circular hole, and the size of the hole 541 is matched with the size of the conductive needle 52 , so that When the conductive pin 52 is inserted into the hole 541 , the conductive pin 52 abuts against the hole wall of the hole 541 , so that the conductive pin 52 and the conductive socket 54 are in contact with each other. It can be understood that the size and shape of the hole 541 and the size and shape of the conductive needle 52 can be designed as required, and are not limited to the shape shown in the figure, as long as it is ensured that when the conductive needle 52 is inserted into the hole 541 The conductive pin 52 and the conductive socket 54 can be connected in contact with each other.
本申请第二实施例的多芯片模组100B,通过芯片30的侧面33设置相互配合的导电针头52和导电插座54,可通过将导电针头52插入导电插座54实现两颗芯片30的电连接,根据芯片侧面33的应用情况,可扩展到多颗芯片30的互连。In the multi-chip module 100B of the second embodiment of the present application, the conductive pins 52 and the conductive sockets 54 are arranged on the side 33 of the chip 30 to cooperate with each other, and the two chips 30 can be electrically connected by inserting the conductive pins 52 into the conductive sockets 54. According to the application of the chip side surface 33 , it can be extended to the interconnection of multiple chips 30 .
可以理解的,所述电连接结构50不限于上述的焊点51和焊盘53、导电针头52和导电插座54的形式,还可以为其他各种能够实现第一导线35A与第二导线35B电性连接的电连接结构。It can be understood that the electrical connection structure 50 is not limited to the above-mentioned forms of the solder joints 51 and pads 53 , the conductive pins 52 and the conductive sockets 54 , and can also be other various forms that can realize the electrical connection between the first wire 35A and the second wire 35B. Electrical connection structure for sexual connection.
请参阅图7,本申请实施例提供的另外的一种多芯片模组200,其与图1所示的多芯片模组100基本相同,也包括封装基板10和设置在所述封装基板10一表面上的至少两个芯片30;二者相同的特征在此不再赘述,二者的区别在于:本实施例中,所述第一裸片30A和所述第二裸片30B相对的两个侧面33之间并未设置电连接结构,而是设置有无线信号收发结构70以使所述第一导线35A和所述第二导线35B实现非接触式的通信连接,进而使所述第一裸片30A和所述第二裸片30B实现非接触式的通信互连。Referring to FIG. 7 , another multi-chip module 200 provided by the embodiment of the present application is basically the same as the multi-chip module 100 shown in FIG. At least two chips 30 on the surface; the same features of the two will not be repeated here, and the difference between the two is: in this embodiment, the first die 30A and the second die 30B are opposite to each other. The side surfaces 33 are not provided with an electrical connection structure, but are provided with a wireless signal transceiver structure 70 to enable the first wire 35A and the second wire 35B to achieve a non-contact communication connection, thereby enabling the first wire The chip 30A and the second die 30B realize contactless communication interconnection.
请参阅图7、图8A和图8B,本申请第三实施例的多芯片模组200A中的 无线信号收发结构70包括一对无源收发电感线圈71。其中一个无源收发电感线圈71设置在所述第一裸片30A与所述第二裸片30B相对的侧面33且连接所述第一导线35A,所述第一导线35A在所述第一裸片30A的底面31连接所述第一裸片30A中的收发电路(图未示)。即,所述第一导线35A一端连接无源收发电感线圈71,另一端连接第一裸片30A中的收发电路(图未示)。另外的一个无源收发电感线圈71设置在所述第二裸片30B与所述第一裸片30A相对的侧面33且连接所述第二导线35B,所述第二导线35B连接所述第二裸片30B中的收发电路。即,所述第二导线35B一端连接另外的一个无源收发电感线圈71,另一端连接第二裸片30B中的收发电路。Please refer to FIG. 7 , FIG. 8A and FIG. 8B , the wireless signal transceiving structure 70 in the multi-chip module 200A according to the third embodiment of the present application includes a pair of passive transceiving inductor coils 71 . One of the passive transceiver inductance coils 71 is disposed on the side 33 of the first die 30A and the second die 30B opposite to the second die 30B and is connected to the first wire 35A, and the first wire 35A is in the first die The bottom surface 31 of the chip 30A is connected to the transceiver circuit (not shown) in the first bare chip 30A. That is, one end of the first wire 35A is connected to the passive transceiver coil 71, and the other end is connected to the transceiver circuit (not shown) in the first bare chip 30A. Another passive transceiver coil 71 is disposed on the side 33 of the second die 30B opposite to the first die 30A and is connected to the second wire 35B, and the second wire 35B is connected to the second Transceiver circuitry in die 30B. That is, one end of the second wire 35B is connected to another passive transceiver coil 71, and the other end is connected to the transceiver circuit in the second bare chip 30B.
该对无源收发电感线圈71的两个无源收发电感线圈71相互对准且间隔,以能够相互收发信号。因此,第一裸片30A和第二裸片30B需保持适当的距离,从而使第一裸片30A和第二裸片30B进行无线通信的功能。The two passive transceiving inductive coils 71 of the pair of passive transceiving inductive coils 71 are aligned and spaced apart from each other, so as to be able to transmit and receive signals to and from each other. Therefore, the first die 30A and the second die 30B need to maintain a proper distance, so that the first die 30A and the second die 30B can perform the function of wireless communication.
可以理解的,如图8A和图8B所示,所述第一裸片30A上可设置多条第一导线35A,对应所述第二裸片30B上也设置多条第二导线35B,所述第一裸片30A和所述第二裸片30B之间设置多对无源收发电感线圈71,所述多条第一导线35A与所述多条第二导线35B一一对应设置且每一对第一导线35A和第二导线35B对应设置有一对无源收发电感线圈71,每一对无源收发电感线圈71的两个无源收发电感线圈71均相互对准且间隔,以使每一对无源收发电感线圈71之间更好地收发信号。It can be understood that, as shown in FIG. 8A and FIG. 8B , a plurality of first wires 35A may be provided on the first die 30A, and a plurality of second wires 35B corresponding to the second die 30B. A plurality of pairs of passive transceiver coils 71 are arranged between the first die 30A and the second die 30B, the plurality of first wires 35A and the plurality of second wires 35B are arranged in a one-to-one correspondence, and each pair of The first wire 35A and the second wire 35B are provided with a pair of passive transceiver coils 71 correspondingly, and the two passive transceiver coils 71 of each pair of passive transceiver coils 71 are aligned and spaced apart from each other, so that each pair The passive transceiving inductive coils 71 can better transmit and receive signals.
本申请第三实施例的多芯片模组200A,通过相邻芯片30的侧面33设置一对无源收发电感线圈71进行近距离电磁通信,从而达到相邻两颗芯片30无线通信的功能,根据芯片30的侧面33的应用情况,可扩展到多颗芯片30的互连。该方案为非接触式多芯片通信方案,通过高速收发机,达到多芯片互连的目的。In the multi-chip module 200A of the third embodiment of the present application, a pair of passive transceiver inductor coils 71 are arranged on the side surfaces 33 of adjacent chips 30 to perform short-range electromagnetic communication, so as to achieve the function of wireless communication between two adjacent chips 30 . The application of the side surface 33 of the chip 30 can be extended to the interconnection of multiple chips 30 . The scheme is a non-contact multi-chip communication scheme, which achieves the purpose of multi-chip interconnection through high-speed transceivers.
请参阅图9、图10A和图10B所示本申请第四实施例的多芯片模组200B,其与第三实施例的多芯片模组200A基本相同,也包括封装基板10和设置在所述封装基板10一表面上的至少两个芯片30,且第一裸片30A和第二裸片30B之间也是非接触式的通信互连,二者相同的特征在此不再赘述,二者的区别在于:所述无线信号收发结构70为一对光收发元件80,其中一个光收发元件80设置在所述第一裸片30A与所述第二裸片30B相对的侧面33且连接所述第一导线35A,所述第一导线35A连接所述第一裸片30A中的光模块处理电路(图未示);另外的一个光收发元件80设置在所述第二裸片30B与所述第一裸片30A相对的侧面33且连接所述第二导线35B,所述第二导线35B连接所述第二裸片30B中的光模块处理电路(图未示)。Please refer to FIG. 9 , FIG. 10A and FIG. 10B . The multi-chip module 200B of the fourth embodiment of the present application is basically the same as the multi-chip module 200A of the third embodiment, and also includes the packaging substrate 10 and the multi-chip module 200B disposed on the There are at least two chips 30 on a surface of the package substrate 10, and the first die 30A and the second die 30B are also non-contact communication interconnections. The same features of the two are not repeated here. The difference is that the wireless signal transceiving structure 70 is a pair of optical transceiving elements 80 , wherein one optical transceiving element 80 is disposed on the side 33 opposite to the first die 30A and the second die 30B and is connected to the first die 30A. A lead 35A, the first lead 35A is connected to the optical module processing circuit (not shown) in the first die 30A; another optical transceiver element 80 is disposed on the second die 30B and the first The opposite side 33 of a die 30A is connected to the second wire 35B, and the second wire 35B is connected to an optical module processing circuit (not shown) in the second die 30B.
本实施例中,该对光收发元件80的两个光收发元件80相互对准且间隔,以使该对光收发元件80更好地相互收发信号。本实施例中,该对光收发元件80的其中一个为发光元件,如发光二极管,另外一个为感光元件。所述第一导线35A的一端连接所述第一裸片30A中的光模块处理电路,另一端连接发光元件。所述第二导线35B的一端所述第二裸片30B中的光模块处理电路, 另一端连接感光元件。In this embodiment, the two optical transceiver elements 80 of the pair of optical transceiver elements 80 are aligned and spaced apart from each other, so that the pair of optical transceiver elements 80 can better transmit and receive signals to each other. In this embodiment, one of the pair of optical transceiver elements 80 is a light-emitting element, such as a light-emitting diode, and the other is a photosensitive element. One end of the first wire 35A is connected to the optical module processing circuit in the first bare chip 30A, and the other end is connected to the light emitting element. One end of the second wire 35B is connected to the optical module processing circuit in the second bare chip 30B, and the other end is connected to the photosensitive element.
可以理解的,所述第一裸片30A的侧面33上也可设置感光元件,对应第二裸片30B的侧面33上设置发光元件对准所述第一裸片30A上的感光元件。It can be understood that a photosensitive element may also be provided on the side surface 33 of the first bare chip 30A, and a light-emitting element corresponding to the side surface 33 of the second bare chip 30B is aligned with the photosensitive element on the first bare chip 30A.
其他实施例中,每一个光收发元件80集成有发射光信号和接收光信号的功能。In other embodiments, each optical transceiver element 80 integrates the functions of transmitting optical signals and receiving optical signals.
可以理解的,如图10A和图10B所示,所述第一裸片30A上可设置多条第一导线35A,对应所述第二裸片30B上也设置多条第二导线35B,所述第一裸片30A和所述第二裸片30B之间设置多对光收发元件80,所述多条第一导线35A与所述多条第二导线35B一一对应设置且每一对第一导线35A和第二导线35B对应设置有一对光收发元件80。可以理解的,所述第一裸片30A的侧面33上也可同时设置分别与不同的第一导线35A连接的发光元件和感光元件,对应第二裸片30B的侧面33上设置分别与不同的第二导线35B连接的发光元件和感光元件,且所述第一裸片30A上的发光元件与所述第二裸片30B上的感光元件为相互成对且每一对的发光元件和感光元件相互对准,所述第一裸片30A上的感光元件与所述第二裸片30B上的发光元件为相互成对且每一对的发光元件和感光元件相互对准。It can be understood that, as shown in FIG. 10A and FIG. 10B , a plurality of first wires 35A may be provided on the first die 30A, and a plurality of second wires 35B corresponding to the second die 30B. A plurality of pairs of optical transceiver elements 80 are arranged between the first die 30A and the second die 30B, the plurality of first wires 35A and the plurality of second wires 35B are arranged in a one-to-one correspondence, and each pair of first A pair of optical transceiver elements 80 are correspondingly provided on the conducting wire 35A and the second conducting wire 35B. It can be understood that light-emitting elements and photosensitive elements respectively connected to different first wires 35A can also be provided on the side 33 of the first die 30A at the same time, and corresponding to the side 33 of the second die 30B are provided with different The second wire 35B connects the light-emitting element and the photosensitive element, and the light-emitting element on the first bare chip 30A and the photosensitive element on the second bare chip 30B are paired with each other, and each pair of light-emitting element and photosensitive element Aligned with each other, the photosensitive elements on the first die 30A and the light emitting elements on the second die 30B are paired with each other, and the light emitting elements and the photosensitive elements of each pair are aligned with each other.
第四实施例的多芯片模组200B,通过相邻芯片30的侧面33设置一对光收发元件80进行近距离光通信,从而达到相邻两颗芯片30无线通信的功能,非接触式多芯片互连通信的方案,由于光信号之间干扰小,带宽大,可有效提高芯片互连带宽。In the multi-chip module 200B of the fourth embodiment, a pair of optical transceiver elements 80 are arranged on the side surfaces 33 of adjacent chips 30 to perform short-range optical communication, so as to achieve the function of wireless communication between the two adjacent chips 30, and the non-contact multi-chip The interconnection communication scheme can effectively improve the chip interconnection bandwidth due to the small interference between optical signals and the large bandwidth.
可以理解的,所述无线信号收发结构不限于上述的无源收发电感线圈71、光收发元件80的形式,还可以为其他各种能够实现第一导线35A与第二导线35B非接触式的通信连接的无线信号收发结构。It can be understood that the wireless signal transceiving structure is not limited to the above-mentioned passive transceiving inductive coil 71 and optical transceiving element 80 , but can also be other various types that can realize non-contact communication between the first wire 35A and the second wire 35B. Connected wireless signal transceiver structure.
如图11所示,本申请还提供电子设备500,所述电子设备500包括壳体510和位于壳体510中的电路板530,上述多芯片模组100,200中的至少一种设置于电路板530上且位于所述壳体510内。图11所示的电子设备500为手机,但不限于手机,所述电子设备可为各种需要设置芯片的电子装置。As shown in FIG. 11 , the present application further provides an electronic device 500 , the electronic device 500 includes a housing 510 and a circuit board 530 located in the housing 510 , and at least one of the above-mentioned multi-chip modules 100 and 200 is disposed in the circuit on the plate 530 and within the housing 510 . The electronic device 500 shown in FIG. 11 is a mobile phone, but is not limited to a mobile phone, and the electronic device can be various electronic devices that need to be provided with chips.
以上实施方式仅用以说明本申请的技术方案而非限制,尽管参照以上较佳实施方式对本申请进行了详细说明,本领域的普通技术人员应当理解,可以对本申请的技术方案进行修改或等同替换都不应脱离本申请技术方案的精神和范围。本领域技术人员还可在本申请精神内做其它变化等用在本申请的设计,只要其不偏离本申请的技术效果均可。这些依据本申请精神所做的变化,都应包含在本申请所要求保护的范围之内。The above embodiments are only used to illustrate the technical solutions of the present application and not to limit them. Although the present application has been described in detail with reference to the above preferred embodiments, those of ordinary skill in the art should understand that the technical solutions of the present application can be modified or equivalently replaced. Neither should depart from the spirit and scope of the technical solutions of the present application. Those skilled in the art can also make other changes within the spirit of the present application, etc. to be used in the design of the present application, as long as they do not deviate from the technical effects of the present application. These changes made in accordance with the spirit of the present application should all be included within the scope of protection claimed in the present application.

Claims (13)

  1. 一种多芯片模组,其特征在于,包括:A multi-chip module, comprising:
    封装基板;package substrate;
    设置在所述封装基板上的至少两个芯片,每一个芯片具有朝向所述封装基板的底面以及连接所述底面的侧面;at least two chips disposed on the packaging substrate, each chip having a bottom surface facing the packaging substrate and a side surface connected to the bottom surface;
    所述至少两个芯片包括相邻间隔且侧面相对的第一裸片和第二裸片,所述第一裸片的底面上设置有第一导线,所述第一导线连接所述第一裸片中的电路并在所述第一裸片的底面和侧面延伸到达所述第一裸片与所述第二裸片相对的侧面,所述第二裸片的底面上设置有第二导线,所述第二导线连接所述第二裸片中的电路并在所述第二裸片的底面和侧面延伸到达所述第二裸片与所述第一裸片相对的侧面;The at least two chips include a first die and a second die that are adjacently spaced and have opposite sides, a first wire is provided on the bottom surface of the first die, and the first wire is connected to the first die The circuit in the chip extends from the bottom surface and side surface of the first die to the side opposite to the second die, and the bottom surface of the second die is provided with a second wire, the second wire is connected to the circuit in the second die and extends on the bottom surface and the side of the second die to the side of the second die opposite to the first die;
    所述第一裸片和所述第二裸片相对的侧面之间设置有电连接结构以使所述第一导线和所述第二导线电性连接;或者所述第一裸片和所述第二裸片相对的侧面之间设置有无线信号收发结构以使所述第一导线和所述第二导线无线通信连接。An electrical connection structure is provided between the opposite sides of the first die and the second die to electrically connect the first wire and the second wire; or the first die and the A wireless signal transceiving structure is disposed between the opposite sides of the second die, so that the first wire and the second wire are wirelessly communicatively connected.
  2. 如权利要求1所述的多芯片模组,其特征在于:所述电连接结构包括相互接触连接的焊点和焊盘,所述焊点凸设在所述第一裸片与所述第二裸片相对的侧面且连接所述第一导线,所述焊盘设置在所述第二裸片与所述第一裸片相对的侧面且连接所述第二导线。1. The multi-chip module of claim 1, wherein the electrical connection structure comprises solder joints and pads that are in contact with each other, and the solder joints are protruded on the first die and the second die. The opposite side of the die is connected to the first wire, and the pad is disposed on the opposite side of the second die and the first die and is connected to the second wire.
  3. 如权利要求1所述的多芯片模组,其特征在于:所述电连接结构包括导电针头和导电插座,所述导电针头凸设在所述第一裸片与所述第二裸片相对的侧面且连接所述第一导线,所述导电插座凸设在所述第二裸片与所述第一裸片相对的侧面且连接所述第二导线,所述导电插座上开设有孔,所述导电针头插设在所述孔中以使所述导电针头和所述导电插座接触电连接。The multi-chip module according to claim 1, wherein the electrical connection structure comprises a conductive pin and a conductive socket, and the conductive pin is protruded on the opposite side of the first die and the second die. The side surface is connected to the first wire, the conductive socket is protruded on the opposite side of the second die and the first die and is connected to the second wire, the conductive socket is provided with a hole, so The conductive pin head is inserted into the hole to make the conductive pin head and the conductive socket contact and electrically connect.
  4. 如权利要求1所述的多芯片模组,其特征在于:所述无线信号收发结构包括一对无源收发电感线圈,其中一个无源收发电感线圈设置在所述第一裸片与所述第二裸片相对的侧面且连接所述第一导线,所述第一导线连接所述第一裸片中的电路为收发电路;另外的一个无源收发电感线圈设置在所述第二裸片与所述第一裸片相对的侧面且连接所述第二导线,所述第二导线连接所述第二裸片中的电路为收发电路。The multi-chip module of claim 1, wherein the wireless signal transceiving structure comprises a pair of passive transceiving inductive coils, wherein one passive transceiving inductive coil is disposed between the first die and the second The opposite sides of the two bare chips are connected to the first wire, and the first wire is connected to the circuit in the first bare chip as a transceiver circuit; another passive transmission and reception inductance coil is arranged between the second bare chip and the second bare chip. The opposite side of the first die is connected to the second wire, and the second wire is connected to a circuit in the second die as a transceiver circuit.
  5. 如权利要求4所述的多芯片模组,其特征在于:该对无源收发电感线圈的两个无源收发电感线圈相互对准且间隔。5. The multi-chip module of claim 4, wherein the two passive transceiver coils of the pair of passive transceiver coils are aligned and spaced apart from each other.
  6. 如权利要求1所述的多芯片模组,其特征在于:所述无线信号收发结构为一对光收发元件,其中一个光收发元件设置在所述第一裸片与所述第二裸片相对的侧面且连接所述第一导线,所述第一导线连接所述第一裸片中的电路为第一光模块处理电路;另外的一个光收发元件设置在所述第二裸片与所述第一裸片相对的侧面且连接所述第二导线,所述第二导线连接所述第二裸片中的电路为第二光模块处理电路。The multi-chip module of claim 1, wherein the wireless signal transceiving structure is a pair of optical transceiving elements, wherein one optical transceiving element is disposed opposite the first die and the second die The side of the optical fiber is connected to the first wire, and the first wire is connected to the circuit in the first die as a first optical module processing circuit; another optical transceiver element is arranged on the second die and the The opposite side of the first die is connected to the second wire, and the second wire is connected to the circuit in the second die to be a second optical module processing circuit.
  7. 如权利要求6所述的多芯片模组,其特征在于:该对光收发元件的两 个光收发元件相互对准且间隔。The multi-chip module of claim 6, wherein the two optical transceiver elements of the pair of optical transceiver elements are aligned and spaced apart from each other.
  8. 如权利要求6或7所述的多芯片模组,其特征在于:该对光收发元件的其中一个为发光元件,另外一个为感光元件。The multi-chip module according to claim 6 or 7, wherein one of the pair of optical transceiver elements is a light-emitting element, and the other is a photosensitive element.
  9. 如权利要求6或7所述的多芯片模组,其特征在于:该对光收发元件的每一个光收发元件集成有发射光信号和接收光信号的功能。The multi-chip module according to claim 6 or 7, wherein each optical transceiver element of the pair of optical transceiver elements integrates the functions of transmitting optical signals and receiving optical signals.
  10. 如权利要求1至9中任一项所述的多芯片模组,其特征在于:所述第一裸片的底面与所述封装基板之间设置有焊点,所述焊点连接所述第一导线;所述第二裸片的底面与所述封装基板之间设置有另外的焊点,所述另外的焊点连接所述第二导线。The multi-chip module according to any one of claims 1 to 9, wherein a solder joint is provided between the bottom surface of the first die and the package substrate, and the solder joint is connected to the first die. A lead; another solder joint is disposed between the bottom surface of the second die and the package substrate, and the other solder joint is connected to the second lead.
  11. 如权利要求10所述的多芯片模组,其特征在于:所述封装基板中设置有导电线路,所述导电线路与所述第一裸片的底面上的焊点和所述第二裸片的底面上的焊点电性连接;所述封装基板背离所述芯片的表面还设置有焊球,所述焊球连接所述封装基板中的导电线路。11. The multi-chip module according to claim 10, wherein a conductive circuit is provided in the package substrate, and the conductive circuit is connected to a solder joint on the bottom surface of the first die and the second die. The solder joints on the bottom surface of the package substrate are electrically connected; the surface of the package substrate facing away from the chip is also provided with solder balls, and the solder balls are connected to the conductive lines in the package substrate.
  12. 如权利要求1至11中任一项所述的多芯片模组,其特征在于:所述第一裸片的底面和侧面上均分别覆盖有绝缘材料层,所述绝缘材料层绝缘间隔所述第一裸片与所述第一导线;所述第二裸片的底面和侧面上均分别覆盖有绝缘材料层,所述绝缘材料层绝缘间隔所述第二裸片与所述第二导线。The multi-chip module according to any one of claims 1 to 11, wherein the bottom surface and the side surface of the first die are covered with insulating material layers respectively, and the insulating material layers are insulatingly spaced from the The first bare chip and the first wire; the bottom surface and the side surface of the second bare chip are respectively covered with an insulating material layer, and the insulating material layer is insulated from the second bare chip and the second wire.
  13. 一种电子设备,包括电路板和位于所述电路板上的多芯片模组,其特征在于:所述多芯片模组为如权利要求1至12中任一项所述的多芯片模组。An electronic device, comprising a circuit board and a multi-chip module on the circuit board, wherein the multi-chip module is the multi-chip module according to any one of claims 1 to 12.
PCT/CN2021/083423 2021-03-26 2021-03-26 Multi-chip module and electronic device having multi-chip module WO2022198675A1 (en)

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