WO2022193454A1 - 电流传感器、电流测量设备、系统、装置和存储介质 - Google Patents

电流传感器、电流测量设备、系统、装置和存储介质 Download PDF

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WO2022193454A1
WO2022193454A1 PCT/CN2021/100222 CN2021100222W WO2022193454A1 WO 2022193454 A1 WO2022193454 A1 WO 2022193454A1 CN 2021100222 W CN2021100222 W CN 2021100222W WO 2022193454 A1 WO2022193454 A1 WO 2022193454A1
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Prior art keywords
uniaxial
magnetic induction
induction intensity
tmr
radius
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PCT/CN2021/100222
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English (en)
French (fr)
Inventor
李鹏
吕前程
田兵
李立浧
骆柏锋
刘仲
王志明
孙宏棣
尹旭
张佳明
Original Assignee
南方电网数字电网研究院有限公司
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Priority to US17/790,584 priority Critical patent/US20240110956A1/en
Publication of WO2022193454A1 publication Critical patent/WO2022193454A1/zh

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R15/00—Details of measuring arrangements of the types provided for in groups G01R17/00 - G01R29/00, G01R33/00 - G01R33/26 or G01R35/00
    • G01R15/14—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks
    • G01R15/20—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices, i.e. measuring a magnetic field via the interaction between a current and a magnetic field, e.g. magneto resistive or Hall effect devices
    • G01R15/205—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices, i.e. measuring a magnetic field via the interaction between a current and a magnetic field, e.g. magneto resistive or Hall effect devices using magneto-resistance devices, e.g. field plates
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G01R19/25—Arrangements for measuring currents or voltages or for indicating presence or sign thereof using digital measurement techniques
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G01R19/10—Measuring sum, difference or ratio

Definitions

  • the present application relates to the technical field of smart grids, and in particular, to a current sensor, a current measurement device, a system, a device and a storage medium.
  • the new generation of smart grids has higher and higher requirements for sensing and monitoring of electrical and non-electrical quantities, and the existing methods of measuring voltage, current and non-electrical quantities can no longer meet the needs of smart grids for comprehensive and real-time sensing information.
  • the application of big data and artificial intelligence technology to accurately perceive and predict the operating state of the power grid requires the comprehensive collection of electrical and non-electrical quantities (environmental parameters) of the power grid technology.
  • the power system when the power system collects current, it mainly relies on the current transformer based on the principle of electromagnetic coupling to measure the conductor to be measured during the operation of the power grid. The acquisition of the current value of the measuring wire.
  • the current current measurement method has the problems of cumbersome testing and high cost.
  • the present application provides a current sensor, the current sensor includes: four first uniaxial TMR chips and at least two second uniaxial TMR chips; each first uniaxial TMR chip and each second uniaxial TMR chip are located on the same virtual ring; wherein, the magnetic sensitivity directions of the four first uniaxial TMR chips are all perpendicular to the radius of the virtual ring, and the magnetic sensitivity directions of two adjacent first uniaxial TMR chips are vertical; The magnetic sensitive directions of the two uniaxial TMR chips are parallel to and opposite to the radius of the virtual ring, and the positions of the two second uniaxial TMR chips are the same as those of the two first uniaxial TMR chips respectively;
  • Each of the first uniaxial TMR chips and each of the second uniaxial TMR chips are used to collect magnetic induction intensity; the magnetic induction intensity is used to calculate the target current value of the wire to be measured; the magnetic induction intensity includes the magnetic induction intensity of the wire to be measured and the strength of the interference magnetic field.
  • the present application provides a current measurement device, the current measurement device comprising: the current sensor of claim 1, and a processor connected to the current sensor;
  • the processor is used to calculate the target current value of the wire to be tested according to the magnetic induction intensity and the radius of the virtual ring.
  • the present application provides a current measurement system, the current measurement comprising: the current sensor of claim 1 and a computer device connected to the current sensor;
  • the computer equipment is used to calculate the target current value of the wire to be tested according to the magnetic induction intensity and the radius of the virtual ring.
  • the present application provides a current measurement method, which is applied to the current measurement device as in the embodiment of the first aspect or the current measurement system as in the second aspect, the method comprising:
  • the magnetic induction intensity includes the magnetic induction intensity of the wire to be measured and the interference magnetic field intensity;
  • the target current value of the wire to be tested is determined.
  • the target current value of the wire to be measured is determined, including:
  • the current calculation formula is Including the corresponding relationship between the magnetic induction intensity variable, the virtual ring radius variable and the current value variable.
  • the construction method of the current calculation formula includes:
  • the current calculation formula is constructed.
  • the target current value of the wire to be measured is determined, including:
  • each first uniaxial TMR chip determines a plurality of candidate current measurement values
  • a target current value is determined from the candidate current measurements.
  • determining the target current value from the candidate current measurements includes:
  • the ratio is smaller than the preset threshold, it is determined that the candidate current measurement value is the target current value.
  • determining the target current value from the candidate current measurements includes:
  • the magnetic induction intensity of each first uniaxial TMR chip, the magnetic induction intensity of each second uniaxial TMR chip, and the radius of the virtual ring determine the distance from the wire to be measured to the center of the circle corresponding to each candidate current measurement value ;
  • the candidate current measurement value is determined as the target current value.
  • the present application provides a current measurement device, the device comprising:
  • an acquisition module for acquiring the magnetic induction intensities of the four first uniaxial TMR chips and the magnetic induction intensities of at least two second uniaxial TMR chips;
  • the determining module is used for determining the target current value of the conductor to be tested according to the magnetic induction intensity of each first uniaxial TMR chip, the magnetic induction intensity of each second uniaxial TMR chip and the radius of the virtual ring.
  • the present application provides a computer-readable storage medium on which a computer program is stored, and when the computer program is executed by a processor, implements the steps of the method in any one of the embodiments of the fourth aspect.
  • the current sensor includes: four first uniaxial TMR chips and at least two second uniaxial TMR chips; each first uniaxial TMR chip and each second uniaxial TMR chip
  • the axial TMR chips are located on the same virtual ring; wherein, the magnetic sensitivity directions of the four first uniaxial TMR chips are all perpendicular to the radius of the virtual ring, and the magnetic sensitivity directions of two adjacent first uniaxial TMR chips are vertical;
  • the magnetic sensitivity directions of the two second uniaxial TMR chips are both parallel to the radius of the virtual ring and opposite, and the positions of the two second uniaxial TMR chips are respectively the same as those of the two first uniaxial TMR chips;
  • Both the uniaxial TMR chip and each second uniaxial TMR chip are used to collect the magnetic induction intensity; the magnetic induction intensity is used to calculate the target current value of the wire to be measured. Because the price of the single-axis TMR chip is lower than that of the current transformer with a magnetic
  • FIG. 1 is a structural block diagram of a current sensor in one embodiment
  • Fig. 2 is a structural block diagram of a current measuring device in one embodiment
  • FIG. 3 is a structural block diagram of a current measurement system in one embodiment
  • FIG. 4 is a schematic flowchart of a current measurement method in one embodiment
  • FIG. 5 is a schematic flowchart of a current measurement method in another embodiment
  • FIG. 6 is a schematic flowchart of a current measurement method in another embodiment
  • FIG. 7 is a schematic flowchart of a current measurement method in another embodiment
  • FIG. 8 is a schematic flowchart of a current measurement method in another embodiment
  • FIG. 9 is a structural block diagram of a current measuring device in another embodiment.
  • FIG. 10 is a structural block diagram of a current measuring device in another embodiment.
  • FIG. 1 is a structural block diagram of a current sensor.
  • a current sensor is provided.
  • the current sensor includes: four first uniaxial TMR chips 11 and at least two second uniaxial TMR chips 12; each first uniaxial TMR chip and each second uniaxial TMR chip are located on the same virtual ring; wherein, the magnetic sensitivity directions of the four first uniaxial TMR chips are all perpendicular to the radius of the virtual ring, and The magnetic sensitivity directions of the two adjacent first uniaxial TMR chips are perpendicular; the magnetic sensitivity directions of the two second uniaxial TMR chips are parallel to and opposite to the radius of the virtual ring, and the two second uniaxial TMR chips are Two of the first uniaxial TMR chips are in the same position;
  • Each of the first uniaxial TMR chips and each of the second uniaxial TMR chips is used to collect the magnetic induction intensity; the magnetic induction intensity is used to calculate the target current value of the wire to be measured 13 ; the magnetic induction intensity includes the magnetic induction intensity of the wire to be measured and the interference magnetic field intensity.
  • the interfering magnetic field may include the magnetic field generated by other electrical devices near the conductor to be tested.
  • the current sensor includes at least 6 uniaxial TMR chips, including four first uniaxial TMR chips and at least two second uniaxial TMR chips, all uniaxial TMR chips are located on the same virtual ring, Among them, the magnetic sensitivity directions of the four first uniaxial TMR chips are all perpendicular to the radius of the virtual ring, and the magnetic sensitivity directions of two adjacent first uniaxial TMR chips are perpendicular; the magnetic sensitivity directions of the two second uniaxial TMR chips are perpendicular to each other.
  • the sensitive directions are parallel to and opposite to the radius of the virtual ring, and the positions of the two second uniaxial TMR chips are respectively the same as those of the two first uniaxial TMR chips.
  • the four first uniaxial TMR chips are recorded as uniaxial TMR chip 1, uniaxial TMR chip 2, uniaxial TMR chip 3, and uniaxial TMR chip 4; the virtual ring where uniaxial TMR chip 1 and uniaxial TMR chip 2 are located
  • the relative position of each uniaxial TMR chip is fixed, but can be placed arbitrarily on the virtual ring, and the wire to be tested can be at any position within the virtual ring.
  • the magnetic induction intensity collected by each uniaxial TMR chip can be used to determine the target current value of the conductor to be measured according to the Biot-Savart law.
  • the angles between the radius of the uniaxial TMR chip 1, the radius of the uniaxial TMR chip 2, the radius of the uniaxial TMR chip 3 and the uniaxial TMR chip 4 and the radius of the conductor to be measured can be defined as ⁇ 1 , ⁇ 2 , ⁇ 3 , ⁇ 4 ;
  • the distances between uniaxial TMR chip 1, uniaxial TMR chip 2, uniaxial TMR chip 3 and uniaxial TMR chip 4 and the conductor to be tested are respectively defined as y 1 , y 2 , y 3 , y 4 ;
  • the angle between the magnetic field direction of the uniaxial TMR chip 1 and the magnetic sensitivity direction of the uniaxial TMR chip 1 is defined as ⁇ 1 ; the magnetic field direction of the uniaxial
  • the magnetic field of the external interference magnetic field is the same at the chip that is closer to each other, and the interference magnetic field intensity is calculated as Simultaneous simplification is performed according to the following formulas (1)-(17):
  • B1, B2, B3, B4, B5 and B6 are the magnetic induction intensity of uniaxial TMR chip 1, the magnetic induction intensity of uniaxial TMR chip 2, the magnetic induction intensity of uniaxial TMR chip 3, the magnetic induction intensity of uniaxial TMR chip 4, As well as the magnetic induction intensity of the uniaxial TMR chip 5 and the magnetic induction intensity of the uniaxial TMR chip 6 in the second uniaxial TMR chip, R is the radius of the virtual ring, which are all known values. It can be seen from the above formula that the current I to be measured can be obtained only according to the seven values of B1, B2, B3, B4, B5 and B6 and R.
  • formula (18) can be solved by formula (1): Solve, where eig( ) is the eigenvector of the solution matrix, that is, the target current value.
  • the candidate current measurement value can also be solved by using formula (13), and the ratio between the imaginary part and the real part of the candidate current measurement value is selected to be less than the preset threshold value, then the candidate current measurement value is determined to be the target current measurement value, and the wire is removed.
  • the current sensor includes: four first uniaxial TMR chips and at least two second uniaxial TMR chips; each first uniaxial TMR chip and each second uniaxial TMR chip are located on the same virtual ring ; wherein, the magnetic sensitivity directions of the four first uniaxial TMR chips are all perpendicular to the radius of the virtual ring, and the magnetic sensitivity directions of the two adjacent first uniaxial TMR chips are perpendicular; The magnetic sensitivity directions are parallel to and opposite to the radius of the virtual ring, and the positions of the two second uniaxial TMR chips are respectively the same as those of the two first uniaxial TMR chips;
  • the shaft TMR chips are all used to collect the magnetic induction intensity; the magnetic induction intensity is used to calculate the target current value of the wire to be measured. Because the price of the single-axis TMR chip is lower than that of the current transformer with a magnetic core, and there is no need to connect the current sensor in series to the circuit to collect current, the test is simple.
  • the current measurement device includes: a current sensor as shown in FIG. 1 , a current sensor connected to the current sensor the processor;
  • the processor is used to calculate the target current value of the wire to be tested according to the magnetic induction intensity and the radius of the virtual ring.
  • the processor may be connected to the current sensor in a wired or wireless manner, and receives the magnetic induction intensity collected by each uniaxial TMR chip sent by the current sensor. After the processor receives the magnetic induction intensity collected by each uniaxial TMR chip sent by the current sensor, the magnetic induction intensity collected by each uniaxial TMR chip and the radius of the virtual ring can be used to calculate the target current value of the wire to be measured in the above embodiment. Calculation method, calculate the target current value.
  • the current measuring device includes a current sensor and a processor connected to the current sensor; the processor calculates the target current value of the wire to be measured according to the magnetic induction intensity and the radius of the virtual circle.
  • the current sensor collects the magnetic induction intensity of the wire to be measured
  • the collected magnetic induction intensity is processed by an external processor to calculate the target current value of the wire to be measured, the test is simple, the structure of the current measurement device is simple, and the uniaxial TMR chip lower cost.
  • the above embodiment describes the current measuring equipment.
  • the current sensor as shown in FIG. 1 collects the magnetic induction intensity and needs to calculate the current value of the wire to be measured, the calculation of the current value of the wire to be measured can also be realized through the computer equipment connected to the current sensor.
  • the current value, the current measurement system composed of a current sensor and a computer device will now be described in an embodiment.
  • the current measurement system includes: the current sensor shown in FIG. 1 , and the current computer equipment to which the sensor is connected;
  • the computer equipment is used to calculate the target current value of the wire to be tested according to the magnetic induction intensity and the radius of the virtual ring.
  • the computer equipment may include a server, which may be implemented by an independent server or a server cluster composed of multiple servers; the computer equipment may also include a terminal, and the computer equipment may include a processor, a memory, a communication interface, a display device connected through a system bus Screens and input devices can be, but are not limited to, various personal computers, notebook computers, smart phones, tablet computers, and portable wearable devices.
  • the computer device can be connected to the current sensor in a wired or wireless manner.
  • the computer device receives the magnetic induction intensity collected by each uniaxial TMR chip, the magnetic induction intensity collected by each uniaxial TMR chip and the radius of the virtual ring are used to
  • the target current value can be calculated by using the method for calculating the target current value of the wire to be measured in the above embodiment.
  • the current measurement system includes: a current sensor and a computer device connected to the current sensor; the computer device calculates the target current value of the wire to be measured according to the magnetic induction intensity and the radius of the virtual ring. After the current sensor collects the magnetic induction intensity of the wire to be measured, the collected magnetic induction intensity is processed by an external computer device to calculate the target current value of the wire to be measured, the test is simple, and the structure of the current measurement device is simple.
  • the above embodiments describe the current sensor, the current measurement device and the current measurement system.
  • the present application provides a current measurement method that can be applied to the above current measurement device or current measurement system.
  • the current value of the wire is described.
  • the method includes:
  • the magnetic induction intensity includes the magnetic induction intensity of the wire to be measured and the interference magnetic field intensity.
  • the current sensor collects the magnetic induction intensity of each first uniaxial TMR chip and the magnetic induction intensity of each second uniaxial TMR chip, it is transmitted to the processor, and the processor can obtain the magnetic induction intensity.
  • the processor can obtain the magnetic induction intensity. Magnetic induction intensity of each first uniaxial TMR chip, and magnetic induction intensity of each second uniaxial TMR chip.
  • each first uniaxial TMR chip and each second uniaxial TMR chip are located on the same virtual ring, and the radius of the virtual ring is a known value
  • the magnetic induction intensity of each first uniaxial TMR chip can be calculated according to the , the magnetic induction intensity of each second uniaxial TMR chip and the radius of the virtual ring, and use the Biot-Savart law to solve the target current value;
  • the target current value can be obtained by simplifying and solving the equation system.
  • the magnetic induction intensity of the TMR chip and the radius of the virtual ring determine the target current value of the wire to be measured. Since it only needs to be determined according to the magnetic induction intensity of each first uniaxial TMR chip, the magnetic induction intensity of each second uniaxial TMR chip, and the radius of the virtual ring where each uniaxial TMR chip is located, it is not necessary to obtain the actual values of other related parameters.
  • the target current value of the wire to be tested, the test method is simple and effective.
  • the current measurement method is described in the above-mentioned embodiment.
  • an embodiment is used to further describe how to determine the target current value of the wire to be measured according to the magnetic induction intensity of each uniaxial TMR chip and the radius of the virtual ring.
  • determine the target current value of the wire to be tested including:
  • the current calculation formula is Including the corresponding relationship between the magnetic induction intensity variable, the virtual ring radius variable and the current value variable.
  • the magnetic induction intensity of each uniaxial TMR chip and the known radius of the virtual ring are put into the value current calculation formula, and the current calculation formula is solved to obtain the target current value.
  • the construction method of the current calculation formula can refer to the steps of the construction method of the current calculation formula shown in FIG. 5, including:
  • the radius of the uniaxial TMR chip 1 is equal to the radius of the uniaxial TMR chip 2, the radii of the uniaxial TMR chip 3 and the uniaxial TMR chip 4 are equal to
  • the included angles of the radius of the conductor to be measured are defined as ⁇ 1 , ⁇ 2 , ⁇ 3 , and ⁇ 4 respectively; that is, the included angle between the radius of the first uniaxial TMR chip and the radius of the conductor to be tested is obtained for each target current value. parameter.
  • the uniaxial TMR chip 1, the uniaxial TMR chip 2, the uniaxial TMR chip 3, and the uniaxial TMR chip 4 can be connected to the conductor to be tested.
  • the distances between them are respectively defined as y 1 , y 2 , y 3 , and y 4 , that is, to obtain the first distance parameter between the first uniaxial TMR chip of each target current value and the conductor to be measured with the target current value.
  • the angle between the magnetic field direction of the uniaxial TMR chip 1 and the magnetic sensitivity direction of the uniaxial TMR chip 1 can be defined as ⁇ 1 ;
  • the angle between the magnetic field direction of the uniaxial TMR chip 2 and the magnetic sensitivity direction of the uniaxial TMR chip 2 is defined as ⁇ 2 ;
  • the angle between the magnetic field direction of the uniaxial TMR chip 3 and the magnetic sensitivity direction of the uniaxial TMR chip 3 is defined as ⁇ 3 ;
  • the angle between the magnetic field direction of the uniaxial TMR chip 4 and the magnetic sensitivity direction of the uniaxial TMR chip 4 is defined as ⁇ 4 ; that is, the magnetic field direction of the first uniaxial TMR chip for each target current value and the corresponding target currents of the first uniaxial TMR chip are obtained.
  • the value of the magnetic field angle parameter of the magnetic sensitivity direction of the first uniaxial TMR chip is obtained after the position of each uniaxial TMR chip on the virtual ring.
  • S508 Obtain a second distance parameter between the wire to be tested and the center of the virtual ring.
  • the distance between the wire L to be measured and the center O of the circle can be defined as x, that is, the second distance parameter.
  • the magnetic field of the external interference magnetic field is the same at the chips that are closer to each other, which is calculated as That is, the parameters of the interference magnetic field are obtained.
  • the current calculation formula can be constructed according to the radius included angle parameter, the first distance parameter, the magnetic field included angle parameter, the second distance parameter and the interference magnetic field parameter:
  • B1, B2, B3, B4, B5 and B6 are the magnetic induction intensity of uniaxial TMR chip 1, the magnetic induction intensity of uniaxial TMR chip 2, the magnetic induction intensity of uniaxial TMR chip 3, the magnetic induction intensity of uniaxial TMR chip 4, As well as the magnetic induction intensity of the uniaxial TMR chip 5 and the magnetic induction intensity of the uniaxial TMR chip 6 in the second uniaxial TMR chip, R is the radius of the virtual ring, which are all known values. It can be seen from the above formula that the current I to be measured can be obtained only according to the 8 values of B1, B2, B3, B4, B5 and B6 and R. Among them, formula (18) can be solved by formula (1): Solve to get the target current value.
  • the target of the wire to be measured is calculated. current value.
  • This method is simple and effective, and can obtain the target current value of the wire to be tested with high precision.
  • the introduced interference magnetic field parameters are cancelled, so the external interference magnetic field does not need to be considered in the final calculation process, and it has the characteristics of anti-interference.
  • the calculation process is only related to the magnetic induction intensity of the wire to be measured and the radius of the ring collected by each uniaxial TMR chip, the calculation process is not easily affected by other parameters and is more accurate. In turn, the measured target current value is more accurate, so the accuracy of the test result is higher.
  • the The magnetic induction intensity of the TMR chip and the radius of the virtual ring determine the target current value of the wire to be tested, including:
  • the magnetic induction intensity of each first uniaxial TMR chip, the magnetic induction intensity of each second uniaxial TMR chip, and the radius of the virtual ring are brought into the current calculation formula constructed by the above embodiment: in, of which, are the coefficients obtained according to the Biot-Saffar law,
  • B1, B2, B3, B4, B5 and B6 are the magnetic induction intensity of uniaxial TMR chip 1, the magnetic induction intensity of uniaxial TMR chip 2, the magnetic induction intensity of uniaxial TMR chip 3, the magnetic induction intensity of uniaxial TMR chip 4, As well as the magnetic induction intensity of the uniaxial TMR chip 5 and the magnetic induction intensity of the uniaxial TMR chip 6 in the second uniaxial TMR chip, R is the radius of the virtual ring, which are all known values. It can be seen from the above formula that the current I to be measured can be obtained only according to the 8 values of B1, B2, B3, B4, B5 and B6 and R. Among them, formula (18) can be solved by formula (1): After solving, 7 solutions, ie, 7 candidate current measurements, can be obtained.
  • Solve the current calculation formula where eig( ) means that the eigenvector of the solution matrix is one of the seven candidate current measurement values, and this solution can be used as the target current value. It is also possible to calculate the ratio between the imaginary part and the real part of each candidate current measurement value, if the ratio is less than the preset threshold, then determine the candidate current measurement value as the target current measurement value, and according to each candidate current measurement value, each first unit The magnetic induction intensity of the axial TMR chip, the magnetic induction intensity of each second uniaxial TMR chip, and the radius of the virtual ring, after determining the distance from the wire to be measured corresponding to each candidate current measurement value to the center of the circle, select the candidate current measurement value corresponding to the measurement value to be measured. The distance from the wire to the center of the circle is less than R/2 as the target current value, and R is the radius of the virtual circle.
  • a plurality of candidate current measurement values are determined according to the magnetic induction intensity of each first uniaxial TMR chip, the magnetic induction intensity of each second uniaxial TMR chip, and the radius of the virtual ring, and the candidate current measurement values are determined from the candidate current measurement values. target current value.
  • the optimal target current value can be selected to obtain more accurate test results.
  • the above embodiment describes the current measurement method, through which a plurality of candidate current measurement values can be determined. Therefore, it is necessary to further select the optimal target current value for the plurality of candidate current measurement values. How to determine the target current is now described.
  • the values further illustrate that, in one embodiment, as shown in FIG. 7 , the target current value is determined from the candidate current measurements, including:
  • S702 Calculate the ratio between the imaginary part and the real part of each candidate current measurement value.
  • the imaginary part and the real part of each candidate current measurement value can be determined, and the ratio between the imaginary part and the real part of each candidate current measurement value can be calculated.
  • the calculated ratio between the imaginary part and the real part of each candidate current measurement value is compared with a preset threshold value, and a candidate current measurement value whose ratio is smaller than the preset threshold value is selected as the target current measurement value.
  • the candidate current measurements I ⁇ 0 is determined as the target current value.
  • the candidate current measurement value is determined as the target current measurement value. More accurate test results can be obtained.
  • the above embodiment describes the current measurement method, through which a plurality of candidate current measurement values can be determined. Therefore, it is necessary to further select the optimal target current value for the plurality of candidate current measurement values. How to determine the target current is now described. The values are further illustrated, as shown in Figure 8, the target current value is determined from the candidate current measurements, including:
  • each candidate current measurement value the magnetic induction intensity of each first uniaxial TMR chip, the magnetic induction intensity of each second uniaxial TMR chip, and the radius of the virtual ring, determine the wire to be measured corresponding to each candidate current measurement value to the center of the circle the distance.
  • the magnetic induction intensity of , and the magnetic induction intensity of the uniaxial TMR chip 5 in the second uniaxial TMR chip, the magnetic induction intensity of the uniaxial TMR chip 6 and the radius R of the virtual ring are brought into the formula , calculate the distance x from the wire to be measured to the center of the circle corresponding to each candidate current measurement value.
  • S804 Determine whether the distance from the wire to be measured corresponding to each candidate current measurement value to the center of the circle is less than R/2, where R is the radius of the virtual ring.
  • the candidate current measurement value is determined as the target current value.
  • the magnetic induction intensity of each first uniaxial TMR chip, the magnetic induction intensity of each second uniaxial TMR chip, and the radius of the virtual ring is determined.
  • the distance from the wire to be measured to the center of the circle, to determine whether the distance from the wire to be measured to the center of the circle corresponding to each candidate current measurement value is less than R/2, where R is the radius of the virtual ring, if so, the candidate current measurement value is determined as the target current value , the optimal target current value can be determined.
  • the current measurement method includes:
  • S920 Calculate the ratio between the imaginary part and the real part of each candidate current measurement value.
  • each candidate current measurement value the magnetic induction intensity of each first uniaxial TMR chip, the magnetic induction intensity of each second uniaxial TMR chip, and the radius of the virtual ring, determine the wire to be measured corresponding to each candidate current measurement value to the center of the circle the distance.
  • the magnetic induction intensity of the TMR chip and the radius of the virtual ring determine the target current value of the wire to be tested. Since it only needs to be determined according to the magnetic induction intensity of each first uniaxial TMR chip, the magnetic induction intensity of each second uniaxial TMR chip, and the radius of the virtual ring where each uniaxial TMR chip is located, it is not necessary to obtain the actual values of other related parameters.
  • the target current value of the wire to be tested, the test method is simple and effective.
  • FIGS. 4-8 are shown in sequence according to the arrows, these steps are not necessarily executed in the sequence shown by the arrows. Unless explicitly stated herein, the execution of these steps is not strictly limited to the order, and the steps may be executed in other orders. Moreover, at least a part of the steps in FIGS. 4-8 may include multiple steps or multiple stages. These steps or stages are not necessarily executed and completed at the same time, but may be executed at different times. The execution of these steps or stages The order is also not necessarily sequential, but may be performed alternately or alternately with other steps or at least a portion of the steps or phases within the other steps.
  • a current measurement device comprising:
  • an acquisition module 901 configured to acquire the magnetic induction intensities of the four first uniaxial TMR chips and the magnetic induction intensities of at least two second uniaxial TMR chips;
  • the determining module 902 is configured to determine the target current value of the conductor to be tested according to the magnetic induction intensity of the first uniaxial TMR chip for each target current value, the magnetic induction intensity of the second uniaxial TMR chip for each target current value and the radius of the virtual ring.
  • the acquisition module acquires the magnetic induction intensities of the four first uniaxial TMR chips and the magnetic induction intensities of at least two second uniaxial TMR chips; the determination module obtains the magnetic induction intensities of the first uniaxial TMR chips, For each target current value, the magnetic induction intensity of the second uniaxial TMR chip and the radius of the virtual ring determine the target current value of the wire to be tested. Since it only needs to be determined according to the magnetic induction intensity of each first uniaxial TMR chip, the magnetic induction intensity of each second uniaxial TMR chip, and the radius of the virtual ring where each uniaxial TMR chip is located, it is not necessary to obtain the actual values of other related parameters.
  • the target current value of the wire to be tested, the test method is simple and effective, and because the interference magnetic field parameters are canceled in the calculation process, it also has the characteristics of anti-interference.
  • the determining module is specifically configured to substitute the magnetic induction intensity of the first uniaxial TMR chip for each target current value, the magnetic induction intensity of the second uniaxial TMR chip for each target current value, and the radius of the virtual ring into a preset current calculation
  • the target current value of the conductor to be measured is calculated to obtain the target current value
  • the current calculation formula of the target current value includes the corresponding relationship between the magnetic induction intensity variable, the virtual ring radius variable and the current value variable.
  • the current testing device further includes:
  • the formula building module 903 is used to obtain the radius angle parameter between the radius of the first uniaxial TMR chip of each target current value and the radius of the wire to be measured with the target current value; to obtain the first uniaxial TMR chip of each target current value and the target current value The first distance parameter between the wires to be measured; obtain the magnetic field angle parameter between the magnetic field direction of the first uniaxial TMR chip for each target current value and the magnetic sensitivity direction of the first uniaxial TMR chip corresponding to each target current value; obtain the target The second distance parameter between the current value of the wire to be measured and the center of the virtual ring of the target current value; the interference magnetic field parameter is obtained; according to the radius angle parameter of the target current value, the first distance parameter of the target current value, and the magnetic field angle of the target current value The parameter, the second distance parameter of the target current value and the target current value interference magnetic field parameter are used to construct a current calculation formula of the target current value.
  • the determining module 902 includes:
  • the first determination unit 9021 is configured to determine a plurality of candidate currents according to the magnetic induction intensity of the first uniaxial TMR chip for each target current value, the magnetic induction intensity of the second uniaxial TMR chip for each target current value, and the radius of the virtual ring of the target current value Measurements;
  • the second determination unit 9022 is configured to determine the target current value from the candidate current measurement values of the target current value.
  • the second determining unit is specifically configured to calculate the ratio between the imaginary part and the real part of each candidate current measurement value of the target current value; if the ratio of the target current value is less than a preset threshold, determine the candidate current value of the target current value The measured value is the target current value and the target current value.
  • the second determining unit is specifically configured to measure the candidate current values according to each target current value, the magnetic induction intensity of the first uniaxial TMR chip for each target current value, and the magnetic induction intensity of the second uniaxial TMR chip for each target current value and the radius of the virtual ring of the target current value, determine the distance from the target current value under test corresponding to the target current value candidate current measurement value to the target current value circle center; determine the target current value corresponding to each target current value candidate current measurement value.
  • the target current value R is the radius of the virtual circle of the target current value; if so, the candidate current measurement value of the target current value is determined as the target current value and the target current value.
  • Each module in the above-mentioned current measuring device may be implemented in whole or in part by software, hardware and combinations thereof.
  • the above modules can be embedded in or independent of the processor in the computer device in the form of hardware, or stored in the memory in the computer device in the form of software, so that the processor can call and execute the operations corresponding to the above modules.
  • a computer-readable storage medium on which a computer program is stored, and when the computer program is executed by a processor, the steps in the foregoing method embodiments are implemented.
  • Non-volatile memory may include read-only memory (Read-Only Memory, ROM), magnetic tape, floppy disk, flash memory, or optical memory, and the like.
  • Volatile memory may include random access memory (RAM) or external cache memory.
  • the RAM may be in various forms, such as Static Random Access Memory (SRAM) or Dynamic Random Access Memory (DRAM).

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Abstract

一种电流传感器，包括：四个第一单轴TMR芯片（11）和至少两个第二单轴TMR芯片（12）；各第一单轴TMR芯片（11）和各第二单轴TMR芯片（12）位于同一虚拟圆环上；其中，四个第一单轴TMR芯片（11）的磁敏感方向均垂直于虚拟圆环的半径，且相邻两个第一单轴TMR芯片（11）的磁敏感方向垂直；两个第二单轴TMR芯片（12）的磁敏感方向均平行于虚拟圆环的半径且相反，且两个第二单轴TMR芯片（12）分别与其中两个第一单轴TMR芯片（11）的位置相同；各单轴TMR芯片均用于采集磁感应强度；磁感应强度用于计算待测导线（13）的目标电流值。测试方式简单、成本低。一种电流测量设备、系统、装置和存储介质。

Description

电流传感器、电流测量设备、系统、装置和存储介质 技术领域
本申请涉及智能电网技术领域，特别是涉及一种电流传感器、电流测量设备、系统、装置和存储介质。
背景技术
新一代智能电网对电气量和非电气量的感知监测要求越来越高，而现有测量电压、电流和非电量的手段已无法满足智能电网全面、实时感知信息的需求。如应用大数据和人工智能技术对电网运行状态的准确感知和预测，则需要实现电网技术电气量和非电气量(环境参数)的全面采集。
传统技术中，电力系统进行电流采集时，主要依靠基于电磁耦合原理的电流互感器对电网运行过程中待测导线进行测量，需要将电流互感器串接进待测电路中进行电流测量，实现待测导线电流值的采集。然而，目前的电流测量方法，存在测试繁琐、成本高的问题。
发明内容
基于此，有必要针对上述技术问题，提供一种能够提高测试精度的电流传感器、电流测量设备、系统、装置和存储介质。
第一方面，本申请提供一种电流传感器，电流传感器包括：四个第一单轴TMR芯片和至少两个第二单轴TMR芯片；各第一单轴TMR芯片和各第二单轴TMR芯片位于同一虚拟圆环上；其中，四个第一单轴TMR芯片的磁敏感方向均垂直于虚拟圆环的半径，且相邻两个第一单轴TMR芯片的磁敏感方向垂直；两个第二单轴TMR芯片的磁敏感方向均平行于虚拟圆环的半径且相反，且两个第二单轴TMR芯片分别与其中两个第一单轴TMR芯片的位置相同；
各第一单轴TMR芯片和各第二单轴TMR芯片均用于采集磁感应强度；磁感应强度用于计算待测导线的目标电流值；磁感应强度包括待测导线的磁感应强度和干扰磁场强度。
第二方面，本申请提供一种电流测量设备，电流测量设备包括：权利要求1的电流传感器、与电流传感器连接的处理器；
处理器用于根据磁感应强度和虚拟圆环的半径计算待测导线的目标电流值。
第三方面，本申请提供一种电流测量系统，电流测量包括：权利要求1的电流传感器、与电流传感器连接的计算机设备；
计算机设备用于根据磁感应强度和虚拟圆环的半径计算待测导线的目标电流值。
第四方面，本申请提供一种电流测量方法，应用于如第一方面实施例中的电流测量设备或如第二方面中的电流测量系统中，该方法包括：
获取四个第一单轴TMR芯片的磁感应强度和至少两个第二单轴TMR芯片的磁感应强度；磁感应强度包括待测导线的磁感应强度和干扰磁场强度；
根据各第一单轴TMR芯片的磁感应强度、各第二单轴TMR芯片磁感应强度和虚拟圆环的半径，确定待测导线的目标电流值。
在其中一个实施例中，根据各第一单轴TMR芯片的磁感应强度、各第二单轴TMR芯片磁感应强度和虚拟圆环的半径，确定待测导线的目标电流值，包括：
将各第一单轴TMR芯片的磁感应强度、各第二单轴TMR芯片磁感应强度和虚拟圆环的半径代入预设的电流计算公式中，计算得到待测导线的目标电流值；电流计算公式为包括磁感应强度变量、虚拟圆环半径变量和电流值变量之间的对应关系。
在其中一个实施例中，电流计算公式的构建方法包括：
获取各第一单轴TMR芯片所在半径与待测导线所在半径的半径夹角参数；
获取各第一单轴TMR芯片与待测导线之间的第一距离参数；
获取各第一单轴TMR芯片的磁场方向与对应的各第一单轴TMR芯片的磁敏感方向的磁场夹角参数；
获取待测导线与虚拟圆环的圆心之间的第二距离参数；
获取干扰磁场参数；
根据半径夹角参数、第一距离参数、磁场夹角参数、第二距离参数和干扰磁场参数，构建电流计算公式。
在其中一个实施例中，根据各第一单轴TMR芯片的磁感应强度、各第二单轴TMR芯片磁感应强度和虚拟圆环的半径，确定待测导线的目标电流值，包括：
根据各第一单轴TMR芯片的磁感应强度、各第二单轴TMR芯片磁感应强度和虚拟圆环的半径，确定多个候选电流测量值；
从候选电流测量值中确定目标电流值。
在其中一个实施例中，从候选电流测量值中确定目标电流值，包括：
计算各候选电流测量值的虚部与实部之间的比值；
若比值小于预设阈值，则确定候选电流测量值为目标电流值。
在其中一个实施例中，从候选电流测量值中确定目标电流值，包括：
根据各候选电流测量值、各第一单轴TMR芯片的磁感应强度、各第二单轴TMR芯片的磁感应强度和虚拟圆环的半径，确定各候选电流测量值对应的待测导线至圆心的距离；
判断各候选电流测量值对应的待测导线至圆心的距离是否小于R/2，R为虚拟圆环的半径；
若是，则将候选电流测量值确定为目标电流值。
第五方面，本申请提供一种电流测量装置，该装置包括：
获取模块，用于获取四个第一单轴TMR芯片磁感应强度和至少两个第二单轴TMR芯片的磁感应强度；
确定模块，用于根据各第一单轴TMR芯片的磁感应强度、各第二单轴TMR芯片磁感应强度和虚拟圆环的半径，确定待测导线的目标电流值。
第六方面，本申请提供一种计算机可读存储介质，其上存储有计算机程序，计算机程序被处理器执行时实现上述第四方面任一项实施例中方法的步骤。
上述电流传感器、电流测量设备、系统、装置和存储介质，电流传感器包括：四个第一单轴TMR芯片和至少两个第二单轴TMR芯片；各第一单轴TMR芯片和各第二单轴TMR芯片位于同一虚拟圆环上；其中，四个第一单轴TMR芯片的磁敏感方向均垂直于虚拟圆环的半径，且相邻两个第一单轴TMR芯片的磁敏感方向垂直；两个第二单轴TMR芯片的磁敏感方向均平行于虚拟圆环的半径且相反，且两个第二单轴TMR芯片分别与其中两个第一单轴TMR芯片的位置相同；各第一单轴TMR芯片和各第二单轴TMR芯片均用于采集磁感应强度；磁感应强度用于计算待测导线的目标电流值。由于，单轴TMR芯片相较于具有磁芯的电流互感器的价格低，且无需将电流传感器串接入电路中，进行电流的采集，测试简单。
附图说明
图1为一个实施例中电流传感器的结构框图；
图2为一个实施例中电流测量设备的结构框图；
图3为一个实施例中电流测量系统的结构框图；
图4为一个实施例中电流测量方法的流程示意图；
图5为另一个实施例中电流测量方法的流程示意图；
图6为另一个实施例中电流测量方法的流程示意图；
图7为另一个实施例中电流测量方法的流程示意图；
图8为另一个实施例中电流测量方法的流程示意图；
图9为另一个实施例中电流测量装置的结构框图；
图10为另一个实施例中电流测量装置的结构框图。
具体实施方式
为了使本申请的目的、技术方案及优点更加清楚明白，以下结合附图及实施例，对本申请进行进一步详细说明。应当理解，此处描述的具体实施例仅仅用以解释本申请，并不用于限定本申请。
图1为电流传感器的结构框图，在一个实施例中，如图1所示，提供了一种电流传感器，该电流传感器包括：四个第一单轴TMR芯片11和至少两个第二单轴TMR芯片12；各第一单轴TMR芯片和各第二单轴TMR芯片位于同一虚拟圆环上；其中，四个第一单轴TMR芯片的磁敏感方向均垂直于虚拟圆环的半径，且相邻两个第一单轴TMR芯片的磁敏感方向垂直；两个第二单轴TMR芯片的磁敏感方向均平行于虚拟圆环的半径且相反，且两个第二单轴TMR芯片分别与其中两个第一单轴TMR芯片的位置相同；
各第一单轴TMR芯片和各第二单轴TMR芯片均用于采集磁感应强度；磁感应强度用于计算待测导线13的目标电流值；磁感应强度包括待测导线的磁感应强度和干扰磁场强度。
其中，干扰磁场可以包括待测导线附近其他电气设备产生的磁场。
具体地，电流传感器包括至少6个单轴TMR芯片，其中，包括四个第一单轴TMR芯片和至少两个第二单轴TMR芯片，所有的单轴TMR芯片均位于同一虚拟圆环上，其中，四个第一单轴TMR芯片的磁敏感方向均垂直于虚拟圆环的半径，且相邻两个第一单轴TMR芯片的磁敏感方向垂直；两个第二单轴TMR芯片的磁敏感方向均平行于虚拟圆环的半径且相反，且两个第二单轴TMR芯片分别与其中两个第一单轴TMR芯片的位置相同。将四个第一单轴TMR芯片记为单轴TMR芯片1、单轴TMR芯片2、单轴TMR芯片3、单轴TMR芯片4；单轴TMR芯片1和单轴TMR芯片2所在虚拟圆环半径的夹角记为A＝90度；单轴TMR芯片1和单轴TMR芯片3所在虚拟圆环半径的夹角记为B＝180度。其中，各单轴TMR芯片的相对位置是固定的，但是可以在虚拟圆环上任意放置，且待测导线可以在虚拟圆环内的任意位置。
当各单轴TMR芯片采集到磁感应强度后，可以利用各单轴TMR芯片采集到的磁感应强度，根据毕奥-萨伐尔定律确定待测导线的目标电流值。如图1中所示，可以将单轴TMR芯片1所在半径、单轴TMR芯片2所在半径、单轴TMR芯片3和单轴TMR芯片4所在半径与待测导线所在半径的夹角分别定义为θ 1,θ 2,θ 3，θ 4；将单轴TMR芯片1、单轴TMR芯片2、单轴TMR芯片3和单轴TMR芯片4与待测导线之间的距离分别定义为y 1，y 2，y 3，y 4；将单轴TMR芯片1的磁场方向与所述单轴TMR芯片1的磁敏感方向的夹角定义为α 1；将单轴TMR芯片2的磁场方向与单轴TMR芯片2的磁敏感方向的夹角定义为α 2； 单轴TMR芯片3的磁场方向与单轴TMR芯片3的磁敏感方向的夹角定义为α 3；单轴TMR芯片4的磁场方向与单轴TMR芯片4的磁敏感方向的夹角定义为α 4；将待测导线L与圆心O的距离定义为x；且由于将各单轴TMR芯片放置于同一虚拟圆环上，所以，虚拟圆环的半径为已知值。考虑外界的干扰磁场相聚传感器的距离相比于芯片距离较大，则外界的干扰磁场在相距较近的芯片处磁场是一致的，将干扰磁场强度计为
Figure PCTCN2021100222-appb-000001
根据以下公式(1)—(17)进行联立化简：
B 1＝I/y 1×cosα 1×M+B a              (1)
B 2＝I/y 2×cosα 2×M-B b              (2)
B 3＝I/y 3×cosα 3×M-B a              (3)
B 4＝I/y 4×cosα 4×M+B b              (4)
B 5＝I/y 4×sinα 4×M-B a              (5)
B 6＝I/y 2×sinα 2×M+B a              (6)
Figure PCTCN2021100222-appb-000002
Figure PCTCN2021100222-appb-000003
Figure PCTCN2021100222-appb-000004
Figure PCTCN2021100222-appb-000005
θ 2＝A-θ 1                              (11)
θ 3＝B-θ 1                              (12)
θ 4＝A+θ 1                              (13)
Figure PCTCN2021100222-appb-000006
Figure PCTCN2021100222-appb-000007
Figure PCTCN2021100222-appb-000008
Figure PCTCN2021100222-appb-000009
其中，
Figure PCTCN2021100222-appb-000010
是根据根据比奥-萨法尔定律得到的系数；其中，第一单轴TMR芯片和第二单轴TMR芯片所在虚拟圆环半径的夹角记为A＝90度；第一单轴TMR芯片和第三单轴TMR芯片所在虚拟圆环半径的夹角记为B＝180度；可以得到公式(18)：
Figure PCTCN2021100222-appb-000011
其中，
a＝4(B 1+B 2+B 3+B 4)
b＝-R(11(B 1+B 2+B 3+B 4) 2+8(B 2+B 4)(B 1+B 3))
c＝8R 2(B 1+B 2+B 3+B 4)(B 2+B 4)(B 1+B 3)+2R(B 1+B 3+B 2+B 4)(3(B 1+B 2+B 3+B 4) 2+8(B 2+B 4)(B 1+B 3))R+R 2((B 1+B 3+B 2+B 4) 2+2((B 1+B 3)(B 2+B 4)+(B 5+B 6) 2))4(B 1+B 2+B 3+B 4)
d＝-4R 3(B 2+B 4) 2(B 1+B 3) 2-2R(B 1+B 3+B 2+B 4)8R 2(B 1+B 2+B 3+B 4)(B 2+B 4)(B 1+B 3)-R 2((B 1+B 3+B 2+B 4) 2+2((B 1+B 3)(B 2+B 4)+(B 5+B 6) 2))(3(B 1+B 2+B 3+B 4) 2+8(B 2+B 4)(B 1+B 3))R-2R 3(B 1+B 3+B 2+B 4)((B 1+B 3)(B 2+B 4)+(B 5+B 6) 2)4(B 1+B 2+B 3+B 4)-((B 1+B 2+B 3+B 4)-2[(B 1+B 3)+R(B 5+B 6) 2]) 2*R
Figure PCTCN2021100222-appb-000012
f＝-R 2((B 1+B 3+B 2+B 4) 2+2((B 1+B 3)(B 2+B 4)+(B 5+B 6) 2))4R 3(B 2+B 4) 2(B 1+B 3) 2-2R 3(B 1+B 3+B 2+B 4)((B 1+B 3)(B 2+B 4)+(B 5+B 6) 2)8R 2(B 1+B 2+B 3+B 4)(B 2+B 4)(B 1+B 3)-R 4((B 1+B 3)(B 2+B 4)+(B 5+B 6) 2) 2(3(B 1+B 2+B 3+B 4) 2+8(B 2+B 4)(B 1+B 3))*R-([(B 1+B 3)+R(B 5+B 6) 2]R(B 1+B 2+B 3+B 4)-2R(B 2+B 4)(B 1+B 3)) 2*R
g＝2R 3(B 1+B 3+B 2+B 4)((B 1+B 3)(B 2+B 4)+(B 5+B 6) 2)4R 3(B 2+B 4) 2(B 1+B 3) 2+R 4((B 1+B 3)(B 2+B 4)+(B 5+B 6) 2) 28R 2(B 1+B 2+B 3+B 4)(B 2+B 4)(B 1+B 3)
h＝-R 4((B 1+B 3)(B 2+B 4)+(B 5+B 6) 2) 24R 3(B 2+B 4) 2(B 1+B 3) 2
由于B1、B2、B3、B4、B5和B6分别为单轴TMR芯片1的磁感应强度、单轴TMR芯片2的磁感应强度、单轴TMR芯片3的磁感应强度、单轴TMR芯片4的磁感应强度、以及第二单轴TMR芯片中的单轴TMR芯片5的磁感应强度和单轴TMR芯片6的磁感应强度，R为虚拟圆环的半径，均为已知值。由上式可知，仅需根据B1、B2、B3、B4、B5和B6以及R这7个值，即可求出待测电流I。其中，对公式(18)的求解，可 以通过公式(1)：
Figure PCTCN2021100222-appb-000013
进行求解，其中eig(·)即为求解矩阵的特征向量，即目标电流值。也可以利用公式(13)求解出候选电流测量值，对候选电流测量值中选取虚部与实部之间的比值小于预设阈值，则确定候选电流测量值为目标电流测量值，并去除导线位置明显有误的候选电流测量值。
在本实施例中，电流传感器包括：四个第一单轴TMR芯片和至少两个第二单轴TMR芯片；各第一单轴TMR芯片和各第二单轴TMR芯片位于同一虚拟圆环上；其中，四个第一单轴TMR芯片的磁敏感方向均垂直于虚拟圆环的半径，且相邻两个第一单轴TMR芯片的磁敏感方向垂直；两个第二单轴TMR芯片的磁敏感方向均平行于虚拟圆环的半径且相反，且两个第二单轴TMR芯片分别与其中两个第一单轴TMR芯片的位置相同；各第一单轴TMR芯片和各第二单轴TMR芯片均用于采集磁感应强度；磁感应强度用于计算待测导线的目标电流值。由于，单轴TMR芯片相较于具有磁芯的电流互感器的价格低，且无需将电流传感器串接入电路中，进行电流的采集，测试简单。
上述实施例对电流传感器进行了说明，如图1所示的电流传感器采集到磁感应强度用于计算待测导线的电流值时，可以通过与电流传感器连接的处理器实现计算待测导线的电流值，现以一个实施例对电流传感器和处理器构成的电流测量设备进行说明，在一个实施例中，如图2所示，电流测量设备包括：如图1所示的电流传感器、与电流传感器连接的处理器；
处理器用于根据磁感应强度和虚拟圆环的半径计算待测导线的目标电流值。
具体地，处理器可以通过有线或者无线的方式与电流传感器连接，接收电流传感器发送的各单轴TMR芯片采集的磁感应强度。当处理器接收到电流传感器发送的各单轴TMR芯片采集的磁感应强度后，利用各单轴TMR芯片采集的磁感应强度和虚拟圆环的半径，可采用上述实施例的待测导线目标电流值的计算方法，计算目标电流值。
在本实施例中，电流测量设备包括电流传感器、与电流传感器连接的处理器；处理器根据磁感应强度和虚拟圆环的半径计算待测导线的目标电流值。由于电流传感器采集到待测导线的磁感应强度后，通过外接的处理器对采集的磁感应强度进行处理，计算待测导线的目标电流值，测试简单，电流测量设备的结构简单，且单轴TMR芯片成本较低。
上述实施例对电流测量设备进行了说明，在如图1所示的电流传感器采集磁感应强度，需要计算待测导线进行电流值时，还可以通过与电流传感器连接的计算机设备实现计算待测导线的电流值，现以一个实施例对电流传感器和计算机设备构成的电流测量系统进行说明，在一个实施例中，如图3所示，电流测量 系统包括：如图1所示的电流传感器、与电流传感器连接的计算机设备；
计算机设备用于根据磁感应强度和虚拟圆环的半径计算待测导线的目标电流值。
其中，计算机设备可以包括服务器，可以用独立的服务器或者是多个服务器组成的服务器集群来实现；计算机设备也可以包括终端，该计算机设备包括通过系统总线连接的处理器、存储器、通信接口、显示屏和输入装置，可以但不限于是各种个人计算机、笔记本电脑、智能手机、平板电脑和便携式可穿戴设备。
具体地，计算机设备可以通过有线或者无线的方式与电流传感器连接，当计算机设备接收到各单轴TMR芯片采集的磁感应强度后，利用各单轴TMR芯片采集的磁感应强度和虚拟圆环的半径，可采用上述实施例的待测导线目标电流值的计算方法，计算目标电流值。
在本实施例中，电流测量系统包括：电流传感器、与电流传感器连接的计算机设备；计算机设备根据磁感应强度和虚拟圆环的半径计算待测导线的目标电流值。由于电流传感器采集到待测导线的磁感应强度后，通过外接的计算机设备对采集的磁感应强度进行处理，计算待测导线的目标电流值，测试简单，电流测量设备的结构简单。
上述实施例对电流传感器、电流测量设备和电流测量系统进行了说明，本申请提供了一种电流测量方法可以应用于上述电流测量设备或电流测量系统中，现以一个实施例对如何计算待测导线的电流值进行说明，在一个实施例中，如图4所示，应用于如图2所示的电流测量设备或如图3所示的电流测量系统中，该方法包括：
S402，获取四个第一单轴TMR芯片的磁感应强度和至少两个第二单轴TMR芯片的磁感应强度；磁感应强度包括待测导线的磁感应强度和干扰磁场强度。
具体地，以执行主体为处理器为例，当电流传感器采集到各第一单轴TMR芯片的磁感应强度、各第二单轴TMR芯片的磁感应强度后，传送至处理器，处理器即可获取各第一单轴TMR芯片的磁感应强度、各第二单轴TMR芯片的磁感应强度。
S404，根据各第一单轴TMR芯片的磁感应强度、各第二单轴TMR芯片磁感应强度和虚拟圆环的半径，确定待测导线的目标电流值。
具体地，由于各第一单轴TMR芯片、各第二单轴TMR芯片位于同一虚拟圆环上，且虚拟圆环的半径为已知值，则可以根据各第一单轴TMR芯片的磁感应强度、各第二单轴TMR芯片的磁感应强度和虚拟圆环的半径，利用毕奥-萨伐尔定律求解目标电流值；也可以在已知各第一单轴TMR芯片的磁感应强度、各第二单轴TMR芯片的磁感应强度和虚拟圆环的半径的基础上，引入相关其他参数，共同构建方程组，对方程组进行化简求解，即可得到目标电流值。
在本实施例中，通过获取四个第一单轴TMR芯片的磁感应强度和至少两个第二单轴TMR芯片的磁感应强度；根据各第一单轴TMR芯片的磁感应强度、各第二单轴TMR芯片磁感应强度和虚拟圆环的半径，确定待测导线的目标电流值。由于仅需根据各第一单轴TMR芯片的磁感应强度、各第二单轴TMR芯片的磁感应强度以及各单轴TMR芯片所在虚拟圆环的半径，无需获取其他相关参数的实际值，即可确定待测导线的目标电流值，测试方法简单有效。
上述实施例对电流测量方法进行了说明，现以一个实施例对如何根据各单轴TMR芯片的磁感应强度和虚拟圆环的半径确定待测导线的目标电流值进一步说明，在一个实施例中，根据各第一单轴TMR芯片的磁感应强度、各第二单轴TMR芯片磁感应强度和虚拟圆环的半径，确定待测导线的目标电流值，包括：
将各第一单轴TMR芯片的磁感应强度、各第二单轴TMR芯片磁感应强度和虚拟圆环的半径代入预设的电流计算公式中，计算得到待测导线的目标电流值；电流计算公式为包括磁感应强度变量、虚拟圆环半径变量和电流值变量之间的对应关系。
具体地，将各单轴TMR芯片的磁感应强度以及已知的虚拟圆环的半径带入值电流计算公式中，对电流计算公式进行求解，即可得到目标电流值。其中，电流计算公式的构建方法可以参见如图5所示的电流计算公式的构建方法的步骤，包括：
S502，获取各第一单轴TMR芯片所在半径与待测导线所在半径的半径夹角参数。
具体地，在各单轴TMR芯片在虚拟圆环上的位置确定后，即将单轴TMR芯片1所在半径、单轴TMR芯片2所在半径、单轴TMR芯片3和单轴TMR芯片4所在半径与待测导线所在半径的夹角分别定义为θ 1,θ 2,θ 3，θ 4；即获取各目标电流值第一单轴TMR芯片所在半径与目标电流值待测导线所在半径的半径夹角参数。
S504，获取各第一单轴TMR芯片与待测导线之间的第一距离参数。
具体地，在各单轴TMR芯片在虚拟圆环上的位置确定后，即可将将单轴TMR芯片1、单轴TMR芯片2、单轴TMR芯片3和单轴TMR芯片4与待测导线之间的距离分别定义为y 1，y 2，y 3，y 4，即获取各目标电流值第一单轴TMR芯片与目标电流值待测导线之间的第一距离参数。
S506，获取各第一单轴TMR芯片的磁场方向与对应的各第一单轴TMR芯片的磁敏感方向的磁场夹角参数。
具体地，在各单轴TMR芯片在虚拟圆环上的位置确定后，即可将单轴TMR芯片1的磁场方向与所述单轴TMR芯片1的磁敏感方向的夹角定义为α 1；将单轴TMR芯片2的磁场方向与单轴TMR芯片2的磁敏感方向的夹角定义为α 2；单轴TMR芯片3的磁场方向与单轴TMR芯片3的磁敏感方向的夹角定义为 α 3；单轴TMR芯片4的磁场方向与单轴TMR芯片4的磁敏感方向的夹角定义为α 4；即获取各目标电流值第一单轴TMR芯片的磁场方向与对应的各目标电流值第一单轴TMR芯片的磁敏感方向的磁场夹角参数。
S508，获取待测导线与虚拟圆环的圆心之间的第二距离参数。
具体地，在各单轴TMR芯片在虚拟圆环上的位置确定后，即可将待测导线L与圆心O的距离定义为x，即第二距离参数。
S510，获取干扰磁场参数。
具体地，考虑外界的干扰磁场相聚传感器的距离相比于芯片距离较大，则外界的干扰磁场在相距较近的芯片处磁场是一致的，计为
Figure PCTCN2021100222-appb-000014
即获取干扰磁场参数。
S512，根据半径夹角参数、第一距离参数、磁场夹角参数、第二距离参数和干扰磁场参数，构建电流计算公式。
具体地，可以根据半径夹角参数、第一距离参数、磁场夹角参数、第二距离参数和干扰磁场参数，构建电流计算公式：
B 1＝I/y 1×cosα 1×M+B a              (1)
B 2＝I/y 2×cosα 2×M-B b              (2)
B 3＝I/y 3×cosα 3×M-B a              (3)
B 4＝I/y 4×cosα 4×M+B b              (4)
B 5＝I/y 4×sinα 4×M-B a              (5)
B 6＝I/y 2×sinα 2×M+B a              (6)
Figure PCTCN2021100222-appb-000015
Figure PCTCN2021100222-appb-000016
Figure PCTCN2021100222-appb-000017
Figure PCTCN2021100222-appb-000018
θ 2＝A-θ 1                              (11)
θ 3＝B-θ 1                              (12)
θ 4＝A+θ 1                              (13)
Figure PCTCN2021100222-appb-000019
Figure PCTCN2021100222-appb-000020
Figure PCTCN2021100222-appb-000021
Figure PCTCN2021100222-appb-000022
其中，
Figure PCTCN2021100222-appb-000023
是根据根据比奥-萨法尔定律得到的系数；其中，第一单轴TMR芯片和第二单轴TMR芯片所在虚拟圆环半径的夹角记为A＝90度；第一单轴TMR芯片和第三单轴TMR芯片所在虚拟圆环半径的夹角记为B＝180度；根据以上公式(1)—(17)进行联立化简：，可以得到公式(18)：
Figure PCTCN2021100222-appb-000024
其中，
a＝4(B 1+B 2+B 3+B 4)
b＝-R(11(B 1+B 2+B 3+B 4) 2+8(B 2+B 4)(B 1+B 3))
c＝8R 2(B 1+B 2+B 3+B 4)(B 2+B 4)(B 1+B 3)+2R(B 1+B 3+B 2+B 4)(3(B 1+B 2+B 3+B 4) 2+8(B 2+B 4)(B 1+B 3))R+R 2((B 1+B 3+B 2+B 4) 2+2((B 1+B 3)(B 2+B 4)+(B 5+B 6) 2))4(B 1+B 2+B 3+B 4)
d＝-4R 3(B 2+B 4) 2(B 1+B 3) 2-2R(B 1+B 3+B 2+B 4)8R 2(B 1+B 2+B 3+B 4)(B 2+B 4)(B 1+B 3)-R 2((B 1+B 3+B 2+B 4) 2+2((B 1+B 3)(B 2+B 4)+(B 5+B 6) 2))(3(B 1+B 2+B 3+B 4) 2+8(B 2+B 4)(B 1+B 3))R-2R 3(B 1+B 3+B 2+B 4)((B 1+B 3)(B 2+B 4)+(B 5+B 6) 2)4(B 1+B 2+B 3+B 4)-((B 1+B 2+B 3+B 4)-2[(B 1+B 3)+R(B 5+B 6) 2]) 2*R
Figure PCTCN2021100222-appb-000025
f＝-R 2((B 1+B 3+B 2+B 4) 2+2((B 1+B 3)(B 2+B 4)+(B 5+B 6) 2))4R 3(B 2+B 4) 2(B 1+B 3) 2-2R 3(B 1+B 3+B 2+B 4)((B 1+B 3)(B 2+B 4)+(B 5+B 6) 2)8R 2(B 1+B 2+B 3+B 4)(B 2+B 4)(B 1+B 3)-R 4((B 1+B 3)(B 2+B 4)+(B 5+B 6) 2) 2(3(B 1+B 2+B 3+B 4) 2+8(B 2+B 4)(B 1+B 3))*R-([(B 1+B 3)+R(B 5+B 6) 2]R(B 1+B 2+B 3+B 4)-2R(B 2+B 4)(B 1+B 3)) 2*R
g＝2R 3(B 1+B 3+B 2+B 4)((B 1+B 3)(B 2+B 4)+(B 5+B 6) 2)4R 3(B 2+B 4) 2(B 1+B 3) 2+R 4((B 1+B 3)(B 2+B 4)+(B 5+B 6) 2) 28R 2(B 1+B 2+B 3+B 4)(B 2+B 4)(B 1+B 3)
h＝-R 4((B 1+B 3)(B 2+B 4)+(B 5+B 6) 2) 24R 3(B 2+B 4) 2(B 1+B 3) 2
由于B1、B2、B3、B4、B5和B6分别为单轴TMR芯片1的磁感应强度、单轴TMR芯片2的磁感应强度、单轴TMR芯片3的磁感应强度、单轴TMR芯片4的磁感应强度、以及第二单轴TMR芯片中的单轴TMR芯片5的磁感应强度和单轴TMR芯片6的磁感应强度，R为虚拟圆环的半径，均为已知值。由上式可知，仅需根据B1、B2、B3、B4、B5和B6以及R 8个值，即可求出待测电流I。其中，对公式(18)的求解，可以通过公式(1)：
Figure PCTCN2021100222-appb-000026
进行求解，得到目标电流值。
在本实施例中，通过将各第一单轴TMR芯片的磁感应强度、各第二单轴TMR芯片磁感应强度和虚拟圆环的半径代入预设的电流计算公式中，计算得到待测导线的目标电流值。这种方法简单有效，且可获取精度较高的待测导线的目标电流值。且在电流计算公式的构建过程中，引入的干扰磁场参数实现了抵消，因此，在最终计算过程中无需考虑外界干扰磁场，具备抗干扰的特性。同时，由于在计算过程中只与各单轴TMR芯片采集的待测导线的磁感应强度和圆环的半径有关，因此，计算过程也不易受其他参数影响，更加准确。进而使测量的目标电流值更加精确，因此测试结果的精度更高。
上述实施例对电流测量方法进行了说明，现对如何确定目标电流值进一步说明，在一个实施例中，如图6所示，根据各第一单轴TMR芯片的磁感应强度、各第二单轴TMR芯片磁感应强度和虚拟圆环的半径，确定待测导线的目标电流值，包括：
S602，根据各第一单轴TMR芯片的磁感应强度、各第二单轴TMR芯片磁感应强度和虚拟圆环的半径，确定多个候选电流测量值。
具体地，将各第一单轴TMR芯片的磁感应强度、各第二单轴TMR芯片的磁感应强度和虚拟圆环的半径带入上述实施例构建的电流计算公式：
Figure PCTCN2021100222-appb-000027
中，其中，
Figure PCTCN2021100222-appb-000028
是根据根据比奥-萨法尔定律得到的系数，
a＝4(B 1+B 2+B 3+B 4)
b＝-R(11(B 1+B 2+B 3+B 4) 2+8(B 2+B 4)(B 1+B 3))
c＝8R 2(B 1+B 2+B 3+B 4)(B 2+B 4)(B 1+B 3)+2R(B 1+B 3+B 2+B 4)(3(B 1+B 2+B 3+B 4) 2+8(B 2+B 4)(B 1+B 3))R+R 2((B 1+B 3+B 2+B 4) 2+2((B 1+B 3)(B 2+B 4)+(B 5+B 6) 2))4(B 1+B 2+B 3+B 4)
d＝-4R 3(B 2+B 4) 2(B 1+B 3) 2-2R(B 1+B 3+B 2+B 4)8R 2(B 1+B 2+B 3+B 4)(B 2+B 4)(B 1+B 3)-R 2((B 1+B 3+B 2+B 4) 2+2((B 1+B 3)(B 2+B 4)+(B 5+B 6) 2))(3(B 1+B 2+B 3+B 4) 2+8(B 2+B 4)(B 1+B 3))R-2R 3(B 1+B 3+B 2+B 4)((B 1+B 3)(B 2+B 4)+(B 5+B 6) 2)4(B 1+B 2+B 3+B 4)-((B 1+B 2+B 3+B 4)-2[(B 1+B 3)+R(B 5+B 6) 2]) 2*R
Figure PCTCN2021100222-appb-000029
f＝-R 2((B 1+B 3+B 2+B 4) 2+2((B 1+B 3)(B 2+B 4)+(B 5+B 6) 2))4R 3(B 2+B 4) 2(B 1+B 3) 2-2R 3(B 1+B 3+B 2+B 4)((B 1+B 3)(B 2+B 4)+(B 5+B 6) 2)8R 2(B 1+B 2+B 3+B 4)(B 2+B 4)(B 1+B 3)-R 4((B 1+B 3)(B 2+B 4)+(B 5+B 6) 2) 2(3(B 1+B 2+B 3+B 4) 2+8(B 2+B 4)(B 1+B 3))*R-([(B 1+B 3)+R(B 5+B 6) 2]R(B 1+B 2+B 3+B 4)-2R(B 2+B 4)(B 1+B 3)) 2*R
g＝2R 3(B 1+B 3+B 2+B 4)((B 1+B 3)(B 2+B 4)+(B 5+B 6) 2)4R 3(B 2+B 4) 2(B 1+B 3) 2+R 4((B 1+B 3)(B 2+B 4)+(B 5+B 6) 2) 28R 2(B 1+B 2+B 3+B 4)(B 2+B 4)(B 1+B 3)
h＝-R 4((B 1+B 3)(B 2+B 4)+(B 5+B 6) 2) 24R 3(B 2+B 4) 2(B 1+B 3) 2
由于B1、B2、B3、B4、B5和B6分别为单轴TMR芯片1的磁感应强度、单轴TMR芯片2的磁感应强度、单轴TMR芯片3的磁感应强度、单轴TMR芯片4的磁感应强度、以及第二单轴TMR芯片中的单轴TMR芯片5的磁感应强度和单轴TMR芯片6的磁感应强度，R为虚拟圆环的半径，均为已知值。由上式可知，仅需根据B1、B2、B3、B4、B5和B6以及R 8个值，即可求出待测电流I。其中，对公式(18)的求解，可以 通过公式(1)：
Figure PCTCN2021100222-appb-000030
进行求解，可以得到7个解，即7个候选电流测量值。
S604，从候选电流测量值中确定目标电流值。
具体地，由于通过公式：
Figure PCTCN2021100222-appb-000031
对电流计算公式进行求解，其中，eig(·)即为求解矩阵的特征向量为7个候选电流测量值中的一个解，可以将此解作为目标电流值。也可以计算各候选电流测量值的虚部与实部之间的比值，若比值小于预设阈值，则确定候选电流测量值为目标电流测量值，并且根据各候选电流测量值、各第一单轴TMR芯片的磁感应强度、各第二单轴TMR芯片的磁感应强度和虚拟圆环的半径，确定各候选电流测量值对应的待测导线至圆心的距离后，选取候选电流测量值对应的待测导线至圆心的距离小于R/2的作为目标电流值，R为虚拟圆环的半径。
在本实施例中，通过根据各第一单轴TMR芯片的磁感应强度、各第二单轴TMR芯片磁感应强度和虚拟圆环的半径，确定多个候选电流测量值，从候选电流测量值中确定目标电流值。能够选取最优的目标电流值，得到更为准确的测试结果。
上述实施例对电流测量方法进行了说明，通过该电流测量方法可以确定多个候选电流测量值，因此还需要对多个候选电流测量值进一步选取最优的目标电流值，现对如何确定目标电流值进一步说明，在一个实施例中，如图7所示，从候选电流测量值中确定目标电流值，包括：
S702，计算各候选电流测量值的虚部与实部之间的比值。
具体地，可以确定每个候选电流测量值的虚部和实部，计算各候选电流测量值的虚部与实部之间的比值。
S704，若比值小于预设阈值，则确定候选电流测量值为目标电流测量值。
具体地，将计算得出的每个候选电流测量值虚部与实部之间的比值与预设阈值进行比较，选取比值小 于预设阈值的候选电流测量值作为目标电流测量值。示例地，候选电流测量值I≠0，
Figure PCTCN2021100222-appb-000032
时，确定为目标电流值。
在本实施例中，通过计算各候选电流测量值的虚部与实部之间的比值，若比值小于预设阈值，则确定候选电流测量值为目标电流测量值。能够得到更为准确的测试结果。
上述实施例对电流测量方法进行了说明，通过该电流测量方法可以确定多个候选电流测量值，因此还需要对多个候选电流测量值进一步选取最优的目标电流值，现对如何确定目标电流值进一步说明，如图8所示，从候选电流测量值中确定目标电流值，包括：
S802，根据各候选电流测量值、各第一单轴TMR芯片的磁感应强度、各第二单轴TMR芯片的磁感应强度和虚拟圆环的半径，确定各候选电流测量值对应的待测导线至圆心的距离。
具体地，将各候选电流测量值I、第一单轴TMR芯片中单轴TMR芯片1的磁感应强度、单轴TMR芯片2的磁感应强度、单轴TMR芯片3的磁感应强度、单轴TMR芯片4的磁感应强度、以及第二单轴TMR芯片中的单轴TMR芯片5的磁感应强度和单轴TMR芯片6的磁感应强度和虚拟圆环的半径R，带入公式
Figure PCTCN2021100222-appb-000033
中，计算各候选电流测量值对应的待测导线至圆心的距离x。
S804，判断各候选电流测量值对应的待测导线至圆心的距离是否小于R/2，R为虚拟圆环的半径。
具体地，可以通过将各候选电流测量值对应的待测导线至圆心的距离与R/2进行做差，确定做差结果是否为负，也可以将将各候选电流测量值对应的待测导线至圆心的距离与R/2进行做商，确定比值是否小于1。
S806，若是，则将候选电流测量值确定为目标电流值。
具体地，若候选电流测量值对应的待测导线至圆心的距离小于R/2，则将该候选电流测量值确定为目标电流值。
在本实施例中，通过根据各候选电流测量值、各第一单轴TMR芯片的磁感应强度、各第二单轴TMR芯片的磁感应强度和虚拟圆环的半径，确定各候选电流测量值对应的待测导线至圆心的距离，判断各候选电流测量值对应的待测导线至圆心的距离是否小于R/2，R为虚拟圆环的半径，若是，则将候选电流测量值确定为目标电流值，能够确定最优的目标电流值。
为了便于本领域技术人员的理解，现以一个实施例对电流测量方法进一步说明，电流测量方法包括：
S902，获取各第一单轴TMR芯片所在半径与待测导线所在半径的半径夹角参数。
S904，获取各第一单轴TMR芯片与待测导线之间的第一距离参数。
S906，获取各第一单轴TMR芯片的磁场方向与对应的各第一单轴TMR芯片的磁敏感方向的磁场夹角参数。
S908，获取待测导线与虚拟圆环的圆心之间的第二距离参数。
S910，获取干扰磁场参数。
S912，根据半径夹角参数、第一距离参数、磁场夹角参数、第二距离参数和干扰磁场参数，构建电流计算公式。
S914，获取四个第一单轴TMR芯片的磁感应强度和至少两个第二单轴TMR芯片的磁感应强度。
S916，根据各第一单轴TMR芯片的磁感应强度、各第二单轴TMR芯片磁感应强度和虚拟圆环的半径，确定待测导线的目标电流值。
S918，根据各第一单轴TMR芯片的磁感应强度、各第二单轴TMR芯片磁感应强度和虚拟圆环的半径，确定多个候选电流测量值。
S920，计算各候选电流测量值的虚部与实部之间的比值。
S922，若比值小于预设阈值，则确定候选电流测量值为目标电流测量值。
S924，根据各候选电流测量值、各第一单轴TMR芯片的磁感应强度、各第二单轴TMR芯片的磁感应强度和虚拟圆环的半径，确定各候选电流测量值对应的待测导线至圆心的距离。
S926，判断各候选电流测量值对应的待测导线至圆心的距离是否小于R/2，R为虚拟圆环的半径。
S928，若是，则将候选电流测量值确定为目标电流值。
在本实施例中，通过获取四个第一单轴TMR芯片的磁感应强度和至少两个第二单轴TMR芯片的磁感应强度；根据各第一单轴TMR芯片的磁感应强度、各第二单轴TMR芯片磁感应强度和虚拟圆环的半径，确定待测导线的目标电流值。由于仅需根据各第一单轴TMR芯片的磁感应强度、各第二单轴TMR芯片的磁感应强度以及各单轴TMR芯片所在虚拟圆环的半径，无需获取其他相关参数的实际值，即可确定待测导线的目标电流值，测试方法简单有效。
应该理解的是，虽然图4-8的流程图中的各个步骤按照箭头的指示依次显示，但是这些步骤并不是必然按照箭头指示的顺序依次执行。除非本文中有明确的说明，这些步骤的执行并没有严格的顺序限制，这些步骤可以以其它的顺序执行。而且，图4-8中的至少一部分步骤可以包括多个步骤或者多个阶段，这些步骤或者阶段并不必然是在同一时刻执行完成，而是可以在不同的时刻执行，这些步骤或者阶段的执行顺序也不必然是依次进行，而是可以与其它步骤或者其它步骤中的步骤或者阶段的至少一部分轮流或者交替地执行。
在一个实施例中，如图9所示，提供了一种电流测量装置，包括：
获取模块901，用于获取四个第一单轴TMR芯片磁感应强度和至少两个第二单轴TMR芯片的磁感应强度；
确定模块902，用于根据各目标电流值第一单轴TMR芯片的磁感应强度、各目标电流值第二单轴TMR芯片磁感应强度和虚拟圆环的半径，确定待测导线的目标电流值。
在本实施例中，获取模块获取四个第一单轴TMR芯片磁感应强度和至少两个第二单轴TMR芯片的磁感应强度；确定模块根据各目标电流值第一单轴TMR芯片的磁感应强度、各目标电流值第二单轴TMR芯片磁感应强度和虚拟圆环的半径，确定待测导线的目标电流值。由于仅需根据各第一单轴TMR芯片的磁感应强度、各第二单轴TMR芯片的磁感应强度以及各单轴TMR芯片所在虚拟圆环的半径，无需获取其他相关参数的实际值，即可确定待测导线的目标电流值，测试方法简单有效，且由于计算过程中实现了干扰磁场参数的抵消，因此还具备抗干扰的特性。
在一个实施例中，确定模块具体用于将各目标电流值第一单轴TMR芯片的磁感应强度、各目标电流值第二单轴TMR芯片磁感应强度和虚拟圆环的半径代入预设的电流计算公式中，计算得到目标电流值待测导线的目标电流值；目标电流值电流计算公式为包括磁感应强度变量、虚拟圆环半径变量和电流值变量之间的对应关系。
在一个实施例中，如图10所示，电流测试装置还包括：
公式构建模块903，用于获取各目标电流值第一单轴TMR芯片所在半径与目标电流值待测导线所在半径的半径夹角参数；获取各目标电流值第一单轴TMR芯片与目标电流值待测导线之间的第一距离参数；获取各目标电流值第一单轴TMR芯片的磁场方向与对应的各目标电流值第一单轴TMR芯片的磁敏感方向的磁场夹角参数；获取目标电流值待测导线与目标电流值虚拟圆环的圆心之间的第二距离参数；获取干扰磁场参数；根据目标电流值半径夹角参数、目标电流值第一距离参数、目标电流值磁场夹角参数、目标电流值第二距离参数和目标电流值干扰磁场参数，构建目标电流值电流计算公式。
在一个实施例中，参见图10所示，确定模块902包括：
第一确定单元9021，用于根据各目标电流值第一单轴TMR芯片的磁感应强度、各目标电流值第二单轴TMR芯片磁感应强度和目标电流值虚拟圆环的半径，确定多个候选电流测量值；
第二确定单元9022，用于从目标电流值候选电流测量值中确定目标电流值。
在一个实施例中，第二确定单元具体用于计算各目标电流值候选电流测量值的虚部与实部之间的比值；若目标电流值比值小于预设阈值，则确定目标电流值候选电流测量值为目标电流值目标电流值。
在一个实施例中，第二确定单元具体用于根据各目标电流值候选电流测量值、各目标电流值第一单轴 TMR芯片的磁感应强度、各目标电流值第二单轴TMR芯片的磁感应强度和目标电流值虚拟圆环的半径，确定各目标电流值候选电流测量值对应的目标电流值待测导线至目标电流值圆心的距离；判断各目标电流值候选电流测量值对应的目标电流值待测导线至目标电流值圆心的距离是否小于R/2，目标电流值R为目标电流值虚拟圆环的半径；若是，则将目标电流值候选电流测量值确定为目标电流值目标电流值。
关于电流测量装置的具体限定可以参见上文中对于电流测量方法的限定，在此不再赘述。上述电流测量装置中的各个模块可全部或部分通过软件、硬件及其组合来实现。上述各模块可以硬件形式内嵌于或独立于计算机设备中的处理器中，也可以以软件形式存储于计算机设备中的存储器中，以便于处理器调用执行以上各个模块对应的操作。
在一个实施例中，提供了一种计算机可读存储介质，其上存储有计算机程序，计算机程序被处理器执行时实现上述各方法实施例中的步骤。
本领域普通技术人员可以理解实现上述实施例方法中的全部或部分流程，是可以通过计算机程序来指令相关的硬件来完成，所述的计算机程序可存储于一非易失性计算机可读取存储介质中，该计算机程序在执行时，可包括如上述各方法的实施例的流程。其中，本申请所提供的各实施例中所使用的对存储器、存储、数据库或其它介质的任何引用，均可包括非易失性和易失性存储器中的至少一种。非易失性存储器可包括只读存储器(Read-Only Memory，ROM)、磁带、软盘、闪存或光存储器等。易失性存储器可包括随机存取存储器(Random Access Memory，RAM)或外部高速缓冲存储器。作为说明而非局限，RAM可以是多种形式，比如静态随机存取存储器(Static Random Access Memory，SRAM)或动态随机存取存储器(Dynamic Random Access Memory，DRAM)等。
以上实施例的各技术特征可以进行任意的组合，为使描述简洁，未对上述实施例中的各个技术特征所有可能的组合都进行描述，然而，只要这些技术特征的组合不存在矛盾，都应当认为是本说明书记载的范围。
以上所述实施例仅表达了本申请的几种实施方式，其描述较为具体和详细，但并不能因此而理解为对发明专利范围的限制。应当指出的是，对于本领域的普通技术人员来说，在不脱离本申请构思的前提下，还可以做出若干变形和改进，这些都属于本申请的保护范围。因此，本申请专利的保护范围应以所附权利要求为准。

Claims (11)

  1. 一种电流传感器，其特征在于，所述电流传感器包括：四个第一单轴TMR芯片和至少两个第二单轴TMR芯片；各所述第一单轴TMR芯片和各所述第二单轴TMR芯片位于同一虚拟圆环上；其中，所述四个第一单轴TMR芯片的磁敏感方向均垂直于所述虚拟圆环的半径，且相邻两个所述第一单轴TMR芯片的磁敏感方向垂直；两个所述第二单轴TMR芯片的磁敏感方向均平行于所述虚拟圆环的半径且相反，且两个所述第二单轴TMR芯片分别与其中两个所述第一单轴TMR芯片的位置相同；
    各所述第一单轴TMR芯片和各所述第二单轴TMR芯片均用于采集磁感应强度；所述磁感应强度用于计算所述待测导线的目标电流值；所述磁感应强度包括待测导线的磁感应强度和干扰磁场强度。
  2. 一种电流测量设备，其特征在于，所述电流测量设备包括：权利要求1所述的电流传感器、与所述电流传感器连接的处理器；
    所述处理器用于根据所述磁感应强度和所述虚拟圆环的半径计算所述待测导线的目标电流值。
  3. 一种电流测量系统，其特征在于，所述电流测量包括：权利要求1所述的电流传感器、与所述电流传感器连接的计算机设备；
    所述计算机设备用于根据所述磁感应强度和所述虚拟圆环的半径计算所述待测导线的目标电流值。
  4. 一种电流测量方法，其特征在于，应用于如权利要求2所述的电流测量设备或如权利要求3所述的电流测量系统中，所述方法包括：
    获取四个第一单轴TMR芯片的磁感应强度和至少两个第二单轴TMR芯片的磁感应强度；所述磁感应强度包括待测导线的磁感应强度和干扰磁场强度；
    根据各所述第一单轴TMR芯片的磁感应强度、各所述第二单轴TMR芯片磁感应强度和虚拟圆环的半径，确定待测导线的目标电流值。
  5. 根据权利要求4所述的方法，其特征在于，所述根据各所述第一单轴TMR芯片的磁感应强度、各所述第二单轴TMR芯片磁感应强度和虚拟圆环的半径，确定待测导线的目标电流值，包括：
    将各所述第一单轴TMR芯片的磁感应强度、各所述第二单轴TMR芯片磁感应强度和虚拟圆环的半径代入预设的电流计算公式中，计算得到所述待测导线的目标电流值；所述电流计算公式为包括磁感应强度变量、虚拟圆环半径变量和电流值变量之间的对应关系。
  6. 根据权利要求5所述的方法，其特征在于，所述电流计算公式的构建方法包括：
    获取各所述第一单轴TMR芯片所在半径与所述待测导线所在半径的半径夹角参数；
    获取各所述第一单轴TMR芯片与所述待测导线之间的第一距离参数；
    获取各所述第一单轴TMR芯片的磁场方向与对应的各所述第一单轴TMR芯片的磁敏感方向的磁场夹角参数；
    获取所述待测导线与所述虚拟圆环的圆心之间的第二距离参数；
    获取干扰磁场参数；
    根据所述半径夹角参数、所述第一距离参数、所述磁场夹角参数、所述第二距离参数和所述干扰磁场参数，构建所述电流计算公式。
  7. 根据权利要求4所述的方法，其特征在于，所述根据各所述第一单轴TMR芯片的磁感应强度、各所述第二单轴TMR芯片磁感应强度和虚拟圆环的半径，确定待测导线的目标电流值，包括：
    根据各所述第一单轴TMR芯片的磁感应强度、各所述第二单轴TMR芯片磁感应强度和所述虚拟圆环的半径，确定多个候选电流测量值；
    从所述候选电流测量值中确定目标电流值。
  8. 根据权利要求7所述的方法，其特征在于，所述从所述候选电流测量值中确定目标电流值，包括：
    计算各所述候选电流测量值的虚部与实部之间的比值；
    若所述比值小于预设阈值，则确定所述候选电流测量值为所述目标电流值。
  9. 根据权利要求7所述的方法，其特征在于，所述从所述候选电流测量值中确定目标电流值，包括：
    根据各所述候选电流测量值、各所述第一单轴TMR芯片的磁感应强度、各所述第二单轴TMR芯片的磁感应强度和所述虚拟圆环的半径，确定各所述候选电流测量值对应的所述待测导线至所述圆心的距离；
    判断各所述候选电流测量值对应的所述待测导线至所述圆心的距离是否小于R/2，所述R为所述虚拟圆环的半径；
    若是，则将所述候选电流测量值确定为所述目标电流值。
  10. 一种电流测量装置，其特征在于，所述装置包括：
    获取模块，用于获取四个第一单轴TMR芯片磁感应强度和至少两个第二单轴TMR芯片的磁感应强度；
    确定模块，用于根据各所述第一单轴TMR芯片的磁感应强度、各所述第二单轴TMR芯片磁感应强度和虚拟圆环的半径，确定待测导线的目标电流值。
  11. 一种计算机可读存储介质，其上存储有计算机程序，其特征在于，所述计算机程序被处理器执行时实现权利要求4至9中任一项所述的方法的步骤。
PCT/CN2021/100222 2021-03-17 2021-06-16 电流传感器、电流测量设备、系统、装置和存储介质 WO2022193454A1 (zh)

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Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113820532B (zh) * 2021-09-23 2022-04-15 南方电网数字电网研究院有限公司 非接触式双芯电缆电流测量方法和装置
CN113777384B (zh) * 2021-09-28 2023-12-12 南方电网数字电网研究院有限公司 四分裂导线电流检测方法、装置、计算机设备和存储介质
CN114563619B (zh) * 2022-04-06 2023-02-17 南方电网数字电网研究院有限公司 基于电场传感芯片的抗干扰非接触式电压测量方法、装置
CN115469138B (zh) * 2022-10-27 2023-03-31 南方电网数字电网研究院有限公司 一种基于单轴电场传感芯片的三相电压测量方法
CN115526121B (zh) * 2022-11-28 2023-05-02 西安交通大学 基于单轴tmr传感信号深度学习的电流计算方法及系统
CN115808578B (zh) * 2022-12-02 2023-12-12 南方电网数字电网研究院有限公司 电力设备的电压获取方法、装置、设备、存储介质

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102012446A (zh) * 2009-09-04 2011-04-13 罗伯特·博世有限公司 电流传感器、电流测量模块以及用于电流测量的方法
CN102841232A (zh) * 2011-05-09 2012-12-26 阿尔卑斯绿色器件株式会社 电线用电流传感器
WO2015144541A2 (de) * 2014-03-28 2015-10-01 Phi-Sens Gmbh Verfahren und vorrichtung für die permanente strommessung in den kabel-verteilkabinen der 230v/400v netzebene
CN107328980A (zh) * 2017-07-13 2017-11-07 北京科技大学 多芯电缆非侵入式电流测量方法及测量装置
CN109959816A (zh) * 2017-12-26 2019-07-02 财团法人工业技术研究院 电流感测装置及方法
CN111398649A (zh) * 2020-05-14 2020-07-10 湖南银河电气有限公司 基于dsp的tmr阵列的测量大电流的开合式柔性探测器
CN111624389A (zh) * 2020-06-04 2020-09-04 重庆大学 一种用于倾斜多导体系统的电流测量系统及方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9202544B2 (en) * 2011-08-02 2015-12-01 Ramot At Tel Aviv University Ltd. Multi-bit magnetic memory cell
US9679589B2 (en) * 2015-09-11 2017-06-13 Seagate Technology Llc Magnetoresistive sensor with enhanced uniaxial anisotropy
US10914611B2 (en) * 2018-08-27 2021-02-09 Nxp B.V. Magnetic field sensor system and method for rotation angle measurement
CN109283379B (zh) * 2018-09-28 2020-07-03 南方电网科学研究院有限责任公司 一种导线电流测量方法、装置、设备及可读存储介质
CN109444510B (zh) * 2018-11-05 2020-10-16 电子科技大学 一种适用于智能电网保护系统的非接触式电流测量装置
CN109521375B (zh) * 2018-11-20 2020-04-24 南方电网科学研究院有限责任公司 一种基于单轴磁传感芯片的电流测量方法、装置
CN109254191B (zh) * 2018-11-27 2020-08-07 南方电网科学研究院有限责任公司 一种长直导线电流的测量方法、装置及系统
CN111426870A (zh) * 2020-05-12 2020-07-17 南方电网数字电网研究院有限公司 导线运行状态检测方法、系统、装置和计算机设备
CN111458573A (zh) * 2020-05-12 2020-07-28 南方电网数字电网研究院有限公司 导线电力参数测量方法、装置、系统和计算机设备
CN111624531B (zh) * 2020-05-26 2022-05-24 中国人民解放军国防科技大学 一种用于tmr三轴集成磁传感器的分量解算方法
CN111650539A (zh) * 2020-06-08 2020-09-11 南方电网数字电网研究院有限公司 导线运行参数检测方法、系统、装置和计算机设备
CN111551776B (zh) * 2020-06-29 2021-04-27 南方电网数字电网研究院有限公司 一种基于粒子群算法的双通电导体电流测量方法、装置
CN111965579B (zh) * 2020-08-12 2022-11-11 南方电网数字电网研究院有限公司 微型电流传感器精度校准方法、装置、计算机设备和存储介质

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102012446A (zh) * 2009-09-04 2011-04-13 罗伯特·博世有限公司 电流传感器、电流测量模块以及用于电流测量的方法
CN102841232A (zh) * 2011-05-09 2012-12-26 阿尔卑斯绿色器件株式会社 电线用电流传感器
WO2015144541A2 (de) * 2014-03-28 2015-10-01 Phi-Sens Gmbh Verfahren und vorrichtung für die permanente strommessung in den kabel-verteilkabinen der 230v/400v netzebene
CN107328980A (zh) * 2017-07-13 2017-11-07 北京科技大学 多芯电缆非侵入式电流测量方法及测量装置
CN109959816A (zh) * 2017-12-26 2019-07-02 财团法人工业技术研究院 电流感测装置及方法
CN111398649A (zh) * 2020-05-14 2020-07-10 湖南银河电气有限公司 基于dsp的tmr阵列的测量大电流的开合式柔性探测器
CN111624389A (zh) * 2020-06-04 2020-09-04 重庆大学 一种用于倾斜多导体系统的电流测量系统及方法

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