WO2022193236A1 - Phase shifter, phased array, electronic device and terminal device - Google Patents

Phase shifter, phased array, electronic device and terminal device Download PDF

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Publication number
WO2022193236A1
WO2022193236A1 PCT/CN2021/081564 CN2021081564W WO2022193236A1 WO 2022193236 A1 WO2022193236 A1 WO 2022193236A1 CN 2021081564 W CN2021081564 W CN 2021081564W WO 2022193236 A1 WO2022193236 A1 WO 2022193236A1
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WIPO (PCT)
Prior art keywords
signal
transistor
differential circuit
circuit
variable gain
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PCT/CN2021/081564
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French (fr)
Chinese (zh)
Inventor
周佳
Original Assignee
华为技术有限公司
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Application filed by 华为技术有限公司 filed Critical 华为技术有限公司
Priority to CN202180092731.1A priority Critical patent/CN116830453A/en
Priority to PCT/CN2021/081564 priority patent/WO2022193236A1/en
Publication of WO2022193236A1 publication Critical patent/WO2022193236A1/en

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    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/18Networks for phase shifting
    • H03H7/20Two-port phase shifters providing an adjustable phase shift

Definitions

  • the embodiments of the present application relate to the field of wireless communications, and in particular, to a phase shifter, a phased array, an electronic device, and a terminal device.
  • phased arrays are typically used to achieve beamforming and beam steering.
  • 5G communication technology autonomous driving technology and artificial intelligence technology
  • the requirements for transmitting signals are getting higher and higher, which puts forward higher requirements for the accuracy of the phase shifter.
  • the phase shifter has a large deviation in the accuracy of the phase shift, thereby affecting the quality of the communication signal.
  • the embodiments of the present application provide a phase shifter, a phased array, an electronic device, and a terminal device, which can improve the quality of communication signals.
  • an embodiment of the present application provides a phase shifter, the phase shifter includes a variable gain amplifier, and the variable gain amplifier includes: a differential circuit, a capacitor circuit, and a control circuit; the differential circuit includes a first a signal input terminal and a second signal input terminal; the capacitor circuit includes a first capacitor, a first switch, a second capacitor and a second switch, the first capacitor is coupled to the differential circuit through the first switch Between the first signal input end of the differential circuit and the common ground, the second capacitor is coupled between the second signal input end of the differential circuit and the common ground through the second switch; the control circuit is used to control all The first switch and the second switch are turned on or off.
  • capacitance compensation can be performed on the parasitic capacitance in the differential circuit, so that the parasitic capacitance in the differential circuit can be stabilized within a certain range, thereby improving the stability of the input impedance of the variable gain amplifier , thereby improving the performance of the variable gain amplifier.
  • the differential circuit includes a first differential circuit and a second differential circuit; the first differential circuit includes a first input terminal, a second input terminal, a third input terminal, and a first output terminal and a second output terminal; the second differential circuit includes a first input terminal, a second input terminal, a third input terminal, a first output terminal and a second output terminal; the first input terminal of the first differential circuit and The first input terminal of the second differential circuit is coupled to the first signal input terminal of the differential circuit for inputting a first signal; the second input terminal of the first differential circuit and the second differential circuit The second input terminal is coupled to the second signal input terminal of the differential circuit for inputting a second signal; the third input terminal of the first differential circuit is coupled to the first bias parameter input terminal of the differential circuit, for inputting the first bias current; the third input terminal of the second differential circuit is coupled to the second bias parameter input terminal of the differential circuit for inputting the second bias current; the first differential circuit The first output terminal of the first differential circuit and the first output terminal of the second differential circuit;
  • the first signal and the second signal are differential signals.
  • variable gain amplifier further includes a current source circuit, and the current source circuit is configured to provide a bias current for the variable gain amplifier.
  • the current source circuit includes a first current source and a second current source; the first current source is used to provide the first bias current to the first differential circuit; the The second current source is used for providing the second bias current to the second differential circuit.
  • variable gain amplifier further includes a current mirror circuit; the current mirror circuit is configured to provide a mirror current to the current source.
  • the current mirror circuit includes a first current mirror and a second current mirror; the first current mirror is configured to provide a first mirror current to the first current source, and the second current mirror The current mirror is used to provide a second mirror current to the second current source.
  • the first current source includes a fifth transistor (eg, transistor M5 shown in FIG. 10 ), and the second current source includes a sixth transistor (eg, transistor M6 shown in FIG. 10 ) ;
  • the first pole of the fifth transistor is coupled to the third input terminal of the first differential circuit, the second pole of the fifth transistor is coupled to the common ground, and the control pole of the fifth transistor is coupled to the The control terminal of the first current mirror (eg transistor M7 shown in FIG. 10 );
  • the first pole of the sixth transistor is coupled to the third input terminal of the second differential circuit, and the second pole of the sixth transistor Coupled to the common ground, the control terminal of the sixth transistor is coupled to the control terminal of the second current mirror (eg transistor M8 shown in FIG. 10 ).
  • variable gain amplifier further includes a digital-to-analog converter; the digital-to-analog converter is used to provide a control signal to the current mirror circuit.
  • the digital-to-analog converter includes a first output terminal and a second output terminal; the first output terminal of the digital-to-analog converter is used to provide a first control to the first current mirror signal; the second output terminal of the digital-to-analog converter is used for providing a second control signal to the second current mirror.
  • control circuit is configured to: control the first switch and the second switch to be turned on or off based on the bias current.
  • the differential circuit includes a first differential circuit and a second differential circuit; the first differential circuit includes a first input terminal, a second input terminal, a third input terminal, and a first output terminal and a second output terminal; the second differential circuit includes a first input terminal, a second input terminal, a third input terminal, a first output terminal and a second output terminal; the first input terminal of the first differential circuit and The first input terminal of the second differential circuit is coupled to the first bias parameter input terminal of the differential circuit for inputting a first bias voltage; the second input terminal of the first differential circuit and the first differential circuit The second input terminal of the two differential circuit is coupled to the second bias parameter input terminal of the differential circuit for inputting a second bias voltage signal; the third input terminal of the first differential circuit is coupled to the differential circuit The first signal input terminal of the differential circuit is used for inputting the first signal; the third input terminal of the second differential circuit is coupled to the second signal input terminal of the differential circuit for inputting the second signal; the first differential circuit The first output terminal of the circuit and the
  • variable gain amplifier further includes a fifth transistor and a sixth transistor; the first pole of the fifth transistor is coupled to the third input terminal of the first differential circuit, the The second pole of the fifth transistor is coupled to the common ground, and the gate of the fifth transistor is used to input the first signal; the first pole of the sixth transistor is coupled to the third input terminal of the second differential circuit, The second pole of the sixth transistor is coupled to the common ground, and the gate of the sixth transistor is used for inputting the second signal.
  • variable gain amplifier further includes a digital-to-analog converter; the digital-to-analog converter is used to provide a bias voltage to the differential circuit.
  • the digital-to-analog converter includes a first output terminal and a second output terminal; the first output terminal is used to provide a first bias voltage to the first differential circuit; the The second output terminal is used for providing a second bias voltage to the second differential circuit.
  • the capacitor circuit further includes a third capacitor, a third switch, a fourth capacitor and a fourth switch, and the third capacitor is coupled to the first capacitor of the differential circuit through the third switch. Between a signal output terminal and the common ground, the second capacitor is coupled between the second signal output terminal of the differential circuit and the common ground through a second switch.
  • the differential circuit is a Gilbert structure circuit; the differential circuit includes a first transistor, a second transistor, a third transistor and a fourth transistor; the first pole of the first transistor and the first pole of the third transistor are coupled to the first signal output terminal of the differential circuit; the first pole of the second transistor and the first pole of the fourth transistor are coupled to the first pole of the differential circuit Two signal output terminals; the second pole of the first transistor and the second pole of the second transistor are coupled to the first signal input terminal or the first bias current input terminal of the differential circuit; the third transistor The second pole of the fourth transistor and the second pole of the fourth transistor are coupled to the second input terminal or the second bias current input terminal of the differential circuit.
  • the first transistor, the second transistor, the third transistor and the fourth transistor are NMOS transistors; the first transistor, the second transistor, the third transistor and the fourth transistor are NMOS transistors ;
  • the first pole of the first transistor is the drain, the second pole of the first transistor is the source; the first pole of the second transistor is the drain, and the second pole of the first transistor is the source.
  • the first electrode of the third transistor is the drain electrode, the second electrode of the third transistor is the source electrode; the first electrode of the fourth transistor is the drain electrode, and the second electrode of the fourth transistor is the source electrode.
  • control circuit is configured to: control the first switch and the second switch to be turned on or off based on the bias voltage of the differential circuit.
  • control circuit is configured to: obtain the digital signal from the digital-to-analog converter, and control the first switch and the second switch to be turned on or off based on the digital signal break.
  • the phase shifter includes a first output end, a second output end, and a plurality of the variable gain amplifiers; the plurality of variable gain amplifiers include a first variable gain amplifier and a second variable gain amplifier; both the first signal output end of the first variable gain amplifier and the first signal output end of the second variable gain amplifier are coupled to the first output end of the phase shifter; The second signal output terminal of the first variable gain amplifier and the second signal output terminal of the second variable gain amplifier are both coupled to the second output terminal of the phase shifter.
  • the phase shifter further includes a quadrature generator and a processor;
  • the quadrature generator is configured to: provide the first variable gain amplifier with the first signal and the second signal, a third signal and a fourth signal are provided to the second variable gain amplifier, the first signal and the second signal are differential signals, the third signal and the fourth signal are differential signals, the The first signal and the third signal are quadrature signals, the second signal and the fourth signal are quadrature signals;
  • the processor is configured to: receive the fifth signal and the fourth signal from the first variable gain amplifier Six signals, a seventh signal and an eighth signal are received from the second variable gain amplifier, and a vector composite signal is generated based on the fifth signal, the sixth signal, the seventh signal and the eighth signal.
  • an embodiment of the present application provides a variable gain amplifier, where the variable gain amplifier is any of the variable gain amplifiers described in the first aspect.
  • an embodiment of the present application provides a phased array, where the phased array includes multiple signal transmission channels and multiple antennas, and the multiple signal transmission channels are correspondingly coupled to the multiple antennas;
  • Each of the signal transmission channels includes a phase shifter as described in the first aspect.
  • each signal transmission channel in the plurality of signal transmission channels further includes the variable gain amplifier described in any of the above implementation manners.
  • an embodiment of the present application provides an electronic device, including a transceiver, where the transceiver is disposed on a circuit board, and the transceiver includes the phased array described in any implementation manner above.
  • an embodiment of the present application provides a terminal, the terminal includes an input and output device and a communication circuit; the communication circuit includes a transceiver, and the transceiver is arranged on a circuit board; the transceiver includes any of the above Implement the phased array described in the method.
  • FIG. 1 is a schematic structural diagram of a wireless communication system provided by an embodiment of the present application.
  • FIG. 2 is a schematic structural diagram of a phased array provided by an embodiment of the present application.
  • FIG. 3 is a schematic diagram of the working principle of a phased array provided by an embodiment of the present application.
  • FIG. 4 is a schematic structural diagram of a phased array provided by an embodiment of the present application.
  • FIG. 5 is a schematic structural diagram of a radio frequency signal transmission channel provided by an embodiment of the present application.
  • FIG. 6 is a schematic structural diagram of a radio frequency signal transmission channel provided by an embodiment of the present application.
  • FIG. 7 is a schematic structural diagram of a vector phase shifter provided by an embodiment of the present application.
  • variable gain amplifier 8 is a schematic structural diagram of a variable gain amplifier provided by an embodiment of the present application.
  • FIG. 9 is a schematic structural diagram of a control circuit provided by an embodiment of the present application.
  • FIG. 10 is a schematic structural diagram of a variable gain amplifier provided by an embodiment of the present application.
  • FIG. 11 is a schematic diagram of the variation of the gate-source parasitic capacitance of the transistor with the differential current provided by the embodiment of the present application;
  • FIG. 12a is a schematic structural diagram of a vector phase shifter formed by using the variable gain amplifier shown in FIG. 8 provided by an embodiment of the present application;
  • 12b is a schematic structural diagram of a vector phase shifter formed by using the variable gain amplifier shown in FIG. 10 provided by an embodiment of the present application;
  • variable gain amplifier 13 is another specific structural schematic diagram of the variable gain amplifier provided by the embodiment of the present application.
  • FIG. 14 is a schematic structural diagram of a vector phase shifter formed by using the variable gain amplifier shown in FIG. 13 provided by an embodiment of the present application;
  • FIG. 15 is another specific structural schematic diagram of the variable gain amplifier provided by the embodiment of the present application.
  • 16 is a schematic structural diagram of an electronic device provided by an embodiment of the present application.
  • FIG. 17 is a schematic structural diagram of a terminal device provided by an embodiment of the present application.
  • references herein to "first,” “second,” and similar terms do not denote any order, quantity, or importance, but are merely used to distinguish the various components. Likewise, words such as “a” or “an” do not denote a quantitative limitation, but rather denote the presence of at least one. Words like “connected” or “coupled” are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect, equivalent to coupling or communicating in a broad sense.
  • words such as “exemplary” or “for example” are used to represent examples, illustrations or illustrations. Any embodiments or designs described in the embodiments of the present application as “exemplary” or “such as” should not be construed as preferred or advantageous over other embodiments or designs. Rather, the use of words such as “exemplary” or “such as” is intended to present the related concepts in a specific manner.
  • the meaning of "plurality” refers to two or more. For example, multiple radio frequency signal transmission channels refer to two or more radio frequency signal transmission channels.
  • devices can be divided into devices that provide wireless network services and devices that use wireless network services.
  • the devices that provide wireless network services refer to those devices that make up a wireless communication network, which can be referred to as network equipment or network elements for short.
  • Network equipment is usually owned by operators (such as China Mobile and Vodafone) or infrastructure providers (such as tower companies), and these manufacturers are responsible for operation or maintenance.
  • Network devices can be further classified into radio access network (RAN) devices and core network (core network, CN) devices.
  • RAN radio access network
  • core network core network
  • a typical RAN device includes a base station (BS).
  • the base station may also sometimes be referred to as a wireless access point (access point, AP), or a transmission reception point (transmission reception point, TRP).
  • the base station may be a general node B (generation Node B, gNB) in a 5G new radio (new radio, NR) system, or an evolutional Node B (evolutional Node B, eNB) in a 4G long term evolution (long term evolution, LTE) system. ).
  • Base stations can be classified into macro base stations or micro base stations according to their physical form or transmit power. Micro base stations are also sometimes referred to as small base stations or small cells.
  • Devices using wireless network services are usually located at the edge of the network and may be referred to as a terminal for short.
  • the terminal can establish a connection with the network device, and provide the user with specific wireless communication services based on the service of the network device.
  • user equipment user equipment
  • subscriber unit subscriber unit
  • SU subscriber unit
  • terminals tend to move with users and are sometimes referred to as mobile stations (mobile stations, MSs).
  • some network devices such as relay nodes (relay nodes, RNs) or wireless routers, can sometimes be regarded as terminals because they have UE identity or belong to users.
  • the terminal may be a mobile phone (mobile phone), a tablet computer (tablet computer), a laptop computer (laptop computer), a wearable device (such as a smart watch, smart bracelet, smart helmet, smart glasses), and other Devices with wireless access capabilities, such as smart cars, various Internet of things (IOT) devices, including various smart home devices (such as smart meters and smart home appliances) and smart city devices (such as security or monitoring equipment, intelligent road transport facilities), etc.
  • IOT Internet of things
  • smart home devices such as smart meters and smart home appliances
  • smart city devices such as security or monitoring equipment, intelligent road transport facilities
  • the present application will take the base station and the terminal as examples to describe the technical solutions of the embodiments of the present application in detail.
  • FIG. 1 is a schematic structural diagram of a wireless communication system according to an embodiment of the present application. As shown in Figure 1, the wireless communication system, base station A, base station B, base station C.
  • the wireless communication system may comply with the wireless communication standard of the third generation partnership project (3GPP), or may comply with other wireless communication standards, such as the Institute of Electrical and Electronics Engineers (Institute of Electrical and Electronics). Engineers, IEEE) wireless communication standards of the 802 series (eg, 802.11, 802.15, or 802.20).
  • 3GPP Third Generation Partnership Project
  • other wireless communication standards such as the Institute of Electrical and Electronics Engineers (Institute of Electrical and Electronics). Engineers, IEEE) wireless communication standards of the 802 series (eg, 802.11, 802.15, or 802.20).
  • the wireless communication system may also include other numbers of terminals and base stations.
  • the wireless communication system may further include other network devices, such as core network devices.
  • the terminal and the base station should know the predefined configuration of the wireless communication system, including the radio access technology (RAT) supported by the system and the wireless resource configuration specified by the system, such as the basic configuration of the radio frequency band and carrier.
  • a carrier is a frequency range that conforms to system regulations. This frequency range can be determined by the center frequency of the carrier (referred to as the carrier frequency) and the bandwidth of the carrier.
  • the pre-defined configurations of these systems can be used as part of the standard protocols of the wireless communication system, or determined by the interaction between the terminal and the base station.
  • the content of the relevant standard protocol may be pre-stored in the memory of the terminal and the base station, or embodied as hardware circuits or software codes of the terminal and the base station.
  • the terminal and the base station support one or more of the same RATs, such as 5G NR, or RATs of future evolution systems.
  • the terminal and the base station use the same air interface parameters, coding scheme, modulation scheme, etc., and communicate with each other based on radio resources specified by the system.
  • the terminal integrated with the phased array in FIG. 1 can be directed to base station A, base station B, and base station C through different configurations.
  • terminals with phased array function can realize more concentrated energy transmission through the function of phased array, thereby reducing the path loss of signal transmission at high frequencies, especially in the millimeter wave frequency range. .
  • FIG. 2 is a schematic structural diagram of a phased array according to an embodiment of the present application.
  • the phased array shown in FIG. 2 can be applied to the application scenario shown in FIG. 1 .
  • the phased array may include a plurality of radio frequency signal transmission channels, the output end of each radio frequency signal transmission channel is coupled to the antenna TX, and each radio frequency signal transmission channel includes a corresponding phase shifter.
  • the phase shifter in the phased array can phase-shift the signal of the corresponding RF signal transmission channel, so that the pattern of the specific direction can be obtained.
  • the phased array needs to dynamically cover multiple directions, the phased array can be implemented by phase scanning. Since the phased array system needs a large scanning angle, there are certain requirements for the phase shift accuracy and phase shift range of the phase shifter of each radio frequency signal transmission channel.
  • the phased array architecture shown in FIG. 3 includes 8 branches.
  • the 8 branches can achieve a phase range of 0-7 ⁇ , and each phase shift unit ⁇ is 45 degrees.
  • the phase shift ranges of the phase shifters in the 8 branches can have different phase shift accuracies.
  • the minimum phase shift of each branch is 0 ⁇ , which is 0 degrees, and the maximum phase shift is 7 ⁇ , which is 315 degrees.
  • the minimum phase shift accuracy ⁇ of each branch can also be changed, for example, the minimum phase shift accuracy ⁇ of each branch can be set to 22.5 degrees.
  • the phased array needs to integrate devices such as power amplifiers and phase shifters in each radio frequency signal transmitting channel in the foregoing embodiment.
  • FIG. 4 shows a schematic structural diagram of the phased array 100 provided by the embodiment of the present application.
  • the phased array 100 includes radio frequency signal transmission channels T1 , T2 , T3 . . . Tn.
  • the phased array 100 may further include a power division unit G, a mixer M, a local oscillator LO, and the like.
  • the local oscillator LO is used to generate a local oscillator signal and provide it to the mixer M; the mixer M mixes the local oscillator signal and the input fundamental frequency signal (or intermediate frequency signal) to generate a radio frequency signal and provide it to the power division unit G .
  • the power division unit G divides the received radio frequency signal into multiple signals, and transmits them through the radio frequency signal transmission channels T1, T2, T3...Tn.
  • the power division unit G may include a plurality of power dividers, which are not shown in the figure.
  • the phased array 100 may further include other devices such as a phase-locked loop, which will not be repeated in this embodiment of the present application.
  • each RF signal transmission channel may include a phase shifter 01 (PS, Phase Shifter) and a power amplifier 02 (PA, Power Amplifier), as shown in the figure 5 shown.
  • the phase shifter 01 may be a passive phase shifter of a load transmission line, a reflection type, a switching network, etc.
  • the phase shifter 01 may also be a vector phase shifter.
  • each radio frequency signal transmission channel also includes a variable gain amplifier 03 (VGA, Variable Gain Amplifier).
  • the variable gain amplifier 03 can be coupled between the phase shifter 01 and the power amplifier 02, and is used to perform gain adjustment on the signal output by the phase shifter 01, as shown in FIG. 6 .
  • the variable gain amplifier 03 may be set in each radio frequency signal transmission channel, or the variable gain amplifier 03 may not be set.
  • the variable gain amplifier 03 can be set in each RF signal transmission channel; when the phase scanning accuracy requirement is low, the variable gain amplifier 03 may not be set in each RF signal transmission channel .
  • the vector phase shifter 01 described in the embodiments of the present application is a vector phase shifter
  • the vector phase shifter may include an in-phase quadrature (IQ, In-phase Quadrature) generator and a plurality of variable gain amplifiers.
  • IQ in-phase quadrature
  • FIG. 7 The structure of the phase shifter 01 is shown in FIG. 7 .
  • the phase shifter 01 includes an IQ generator 011 , a variable gain amplifier 012 , a variable gain amplifier 013 and a processor 014 .
  • the output terminal Go1 of the IQ generator 011 is coupled to the first input terminal of the variable gain amplifier 012
  • the output terminal Go2 of the IQ generator 011 is coupled to the second input terminal of the variable gain amplifier 012 .
  • the output terminal Go3 of the IQ generator 011 is coupled to the first input terminal of the variable gain amplifier 013
  • the output terminal Go4 of the IQ generator 011 is coupled to the second input terminal of the variable gain amplifier 013 .
  • the first output terminal of the variable gain amplifier 012 is coupled to the input terminal Si1 of the processor 014;
  • the second output terminal of the variable gain amplifier 012 is coupled to the input terminal Si2 of the processor 014;
  • the first output terminal of the variable gain amplifier 013 Coupled to the input end Si3 of the processor 014, the second output end of the variable gain amplifier 013 is coupled to the input end Si4 of the processor 014;
  • the output ends So1 and So2 of the processor 014 are used as the output ends of the phase shifter 01 for output Signal.
  • the IQ generator 011 processes the received radio frequency signal to generate four signals of signal Ia1, signal Ia2, signal Qa1 and signal Qa2, wherein the signal Ia1 and the signal Qa1 are a pair of quadrature signals (that is, the amplitude Signals with the same and quadrature phases), the signal Ia2 and the signal Qa2 are a pair of quadrature signals, the signal Ia1 and the signal Ia2 are a pair of differential signals (that is, the signals with the same amplitude and opposite phases), the signal Qa1 and the signal Qa2 are a pair of differential signals for differential signals.
  • the signal Ia1 and the signal Qa1 are a pair of quadrature signals (that is, the amplitude Signals with the same and quadrature phases)
  • the signal Ia2 and the signal Qa2 are a pair of quadrature signals
  • the signal Ia1 and the signal Ia2 are a pair of differential signals (that is, the signals with the same amplitude and opposite phases)
  • the IQ generator 011 provides the signal Ia1 and the signal Ia2 to the variable gain amplifier 012 , and the IQ generator 011 provides the signal Qa1 and the signal Qa2 to the variable gain amplifier 013 . Then, the variable gain amplifier 012 performs gain adjustment on the signals Ia1 and Ia2 to generate the signals Ib1 and Ib2, and the variable gain amplifier 013 performs gain adjustment on the signals Qa1 and Qa2 to generate the signals Qb1 and Qb2.
  • the signal Ib1 and the signal Ib2 are a pair of differential signals, and the signal Qb1 and the signal Qb2 are a pair of differential signals.
  • the processor 014 performs vector synthesis on the signal Ib1, the signal Ib2, the signal Qb1 and the signal Qb2, and finally outputs the signal Vo1 and the signal Vo2 with a specific phase, wherein the signal Vo1 and the signal Vo2 are a pair of differential signals.
  • each radio frequency signal transmission channel includes a variable gain amplifier 03
  • the structure of the variable gain amplifier 03 can be as shown in FIG. 8 and FIG. 10.
  • the variable gain amplifier 012 and the variable gain amplifier 013 included in the phase shifter 01 as shown in FIG. 7 may also be the ones described in any one of the embodiments of FIG. 8 , FIG. 10 , FIG. 13 or FIG. 15 .
  • the structure of the variable gain amplifier 10 The variable gain amplifier described in the embodiments of the present application will be described in detail below.
  • FIG. 8 is a schematic structural diagram of a variable gain amplifier provided by an embodiment of the present application.
  • the variable gain amplifier 10 includes a differential circuit 101 , a capacitor circuit 102 , a control circuit 103 and a digital-to-analog converter 104 .
  • the differential circuit 101 includes a signal input terminal In1, a signal input terminal In2, an offset parameter input terminal Ic1, an offset parameter input terminal Ic2, a signal output terminal Io2, and a signal output terminal Io2.
  • the signal input terminal In1 and the signal input terminal In2 of the differential circuit 101 are the signal input terminals of the variable gain amplifier 10 .
  • the signal output terminal Io1 and the signal output terminal Io2 of the differential circuit 101 are the signal output terminals of the variable gain amplifier 10 .
  • the bias parameter input terminal Ic1 and the bias parameter input terminal Ic2 of the differential circuit 101 are respectively coupled to the output terminal Do1 and the output terminal Do2 of the digital-to-analog converter 104, and the input terminal Di of the digital-to-analog converter 104 is used for inputting digital signals, wherein , the offset parameters of the differential circuit 101 are different, and the input digital signals are different.
  • the capacitor circuit 102 includes M capacitors C1, M capacitors C2, M switches K1 and M switches K2. Among them, M is an integer greater than or equal to 1.
  • FIG. 8 schematically shows the situation of two capacitors C1 , two capacitors C2 , two switches K1 and two switches K2 .
  • the structure of the variable gain amplifier 10 shown in FIG. 8 will be described in detail below by taking M as 2 as an example.
  • the first poles of the two capacitors C1 are both coupled to the signal input terminal In1, the second poles of the two capacitors C1 are coupled to the first terminals of the two switches K1 in a one-to-one correspondence, and the second terminals of the two switches K1 are both coupled to the common Ground Gnd; the first poles of the two capacitors C2 are both coupled to the signal input terminal In2, the second poles of the two capacitors C2 are coupled to the first terminals of the two switches K2 in one-to-one correspondence, and the second terminals of the two switches K2 are both Coupled to common ground Gnd.
  • the control circuit 103 may control each switch K1 and each switch K2 to be turned on or off based on the bias parameter of the differential circuit 101 .
  • the control circuit 103 may be a circuit composed of discrete devices or a circuit composed of programmable logic devices.
  • the input end Ci of the control circuit 103 is coupled to the input end Di of the digital-to-analog converter 104, and the bias parameter of the differential circuit 101 is determined based on the digital signal input by the digital-to-analog converter 104, and the control circuit
  • the output terminal Co1 of 103 is coupled to the control terminal of one of the switches K1 and the control terminal of one of the switches K2, and the output terminal Co2 of the control circuit 103 is coupled to the control terminal of the other switch K1 and the control terminal of the other switch K2.
  • the switch K1 and the switch K2 coupled to the same output terminal have the same on and off states.
  • the switch K1 and the switch K2 coupled to the output terminal Co1 are turned on at the same time or turned off at the same time.
  • the size of the M capacitors coupled to the same signal input end may be the same or different.
  • the M capacitors coupled to the same signal input terminal have different sizes.
  • the size of the two capacitors C1 coupled with the signal input terminal In1 is different, and the size of one capacitor C1 can be twice that of the other capacitor C1; the size of the two capacitors C2 coupled with the signal input terminal In2 is different, one of which The size of the capacitor C2 can be twice the size of the other capacitor C2.
  • the switch K1 and switch K2 coupled with the output terminal Co1 of the control circuit 103 have the same size as the capacitor C1 and the capacitor C2; the switch K1 and the switch K2 coupled with the output terminal Co2 of the control circuit 103 are Capacitor C1 and capacitor C2 are equal in size.
  • the input end Di of the digital-to-analog converter 104 is coupled to the processor 05 to obtain a digital signal from the processor 05 .
  • the digital signal may be a multi-bit digital code for indicating the value of the offset parameter input to the offset parameter input terminal Ic1 and the offset parameter input terminal Ic2 of the differential circuit 101 .
  • the bias parameter may include bias voltage or bias current.
  • the differential circuit 101 described in the embodiments of the present application may be a current-driven differential circuit or a voltage-driven differential circuit. When the differential circuit 101 is a current-driven differential circuit, the bias parameter is a bias current; when the differential circuit 101 is a voltage-driven differential circuit, the bias parameter is a bias voltage.
  • the processor 05 can generate a digital code based on the magnitude of the gain to be output by the variable gain amplifier 10 and provide it to the digital-to-analog converter 104 .
  • the digital-to-analog converter 104 converts the digital code into an analog quantity based on the corresponding relationship between the digital code and the offset parameter, and provides the digital code to the differential circuit 101 . It should be noted that the embodiment of the present application does not limit the number of digits of the digital code input to the digital-to-analog converter 104. When more fine adjustment of the bias parameter is required, the digital code can be set to more digits.
  • the control circuit 103 controls the switch K1 or the switch K2 to be turned on or off based on the digital code input from the input end Di of the digital-to-analog converter 104, so that at least one capacitor C1 is coupled to the signal input end In1 of the differential circuit 101 and the common ground Gnd between, or disconnect the connection between the at least one capacitor C1 and the common ground Gnd; and, make the at least one capacitor C2 coupled between the signal input terminal In2 of the differential circuit 101 and the common ground Gnd, or disconnect the The connection between at least one capacitor C2 and the common ground Gnd.
  • the control circuit 103 may also have the structure shown in FIG. 9 .
  • the variable gain amplifier 10 further includes an XOR gate N1, an XOR gate N2, an inverter F1 and an inverter F2.
  • the output terminal of the inverter F1 is coupled to the second input terminal of the same-OR gate N1
  • the output terminal of the inverter F2 is coupled to the second input terminal of the same-OR gate N2.
  • the output terminal of the XOR gate N1 is the output terminal Co1 of the control circuit 103
  • the output terminal of the XOR gate N2 is the output terminal Co2 of the control circuit 103 .
  • the control circuit 103 can obtain the upper three digits of the digital code (that is, the tenth, ninth, and eighth digits), and then input the tenth digit into the first input terminal of the XOR gate N1 and the XOR gate.
  • the first input terminal of N2 inputs the ninth digital code to the input terminal of the inverter F1, and inputs the eighth digital code to the input terminal of the inverter F2.
  • Inverter F1 inverts the ninth digital code and provides it to the second input terminal of the OR gate N1; the exclusive OR gate N1 performs the same OR operation on the tenth digital code and the inverted ninth digital code.
  • the inverter F2 inverts the eighth digital code and provides it to the second input of the OR gate N2; the same OR gate N2 pairs the tenth digit
  • the code and the inverted eighth-digit digital code perform the same-OR operation to control the other switch K1 and the other switch K2 to be turned on or off.
  • the differential circuit 101 described in the embodiments of the present application may be a circuit with a Gilbert structure.
  • the structure of the differential circuit 101 is shown in FIG. 10 .
  • the differential circuit 101 may include a first differential circuit and a second differential circuit.
  • the first differential circuit includes a transistor M1 and a transistor M2, and the second differential circuit includes a transistor M3 and a transistor M4.
  • Each transistor may be a PMOS type transistor or an NMOS type transistor. The following description will be given by taking as an example that each transistor is an NMOS transistor.
  • the source of the transistor M1 is coupled with the source of the transistor M2, the source of the transistor M3 is coupled with the source of the transistor M4, the drain of the transistor M1 and the drain of the transistor M3 are coupled together as the differential circuit 101.
  • the signal output terminal Io1 , the drain of the transistor M2 and the drain of the transistor M4 are all coupled together as the signal output terminal Io2 of the differential circuit 101 . It should be noted that the signal output terminal Io1 and the signal output terminal Io2 of the differential circuit 101 are the output terminals of the variable gain amplifier 10 .
  • the differential circuit 101 is a current-driven circuit, and the signals input to the gates of the transistors in the differential circuit 101 are shown in FIG. 10 .
  • the differential circuit 101 is a voltage-driven circuit, and at this time, the signals input to the gates of the transistors in the differential circuit 101 are shown in FIG. 13 .
  • the specific description of the voltage-driven differential circuit refers to the related description of FIG. 13 .
  • the gates of the transistors M1 and M4 are both coupled to the signal input terminal In1 of the differential circuit 101 ; the gates of the transistors M2 and M3 are both coupled to the signal input terminal In2 of the differential circuit 101 .
  • the variable gain amplifier further includes a current source for supplying a bias current to the differential circuit 101 .
  • the current source may include a first current source for providing bias current to the first differential circuit and a second current source for providing bias current to the second differential circuit.
  • the first current source may include a transistor M5
  • the second current source may include a transistor M6 .
  • the drain of the transistor M5 is coupled to the bias current input terminal Ic1 of the differential circuit 101
  • the drain of the transistor M6 is coupled to the bias current input terminal Ic2 of the differential circuit 101
  • the source of the transistor M5 and the source of the transistor M6 are both Coupled to common ground Gnd.
  • the variable gain amplifier 10 further includes a current mirror circuit 105 .
  • the current mirror circuit includes a first current mirror for providing a first mirror current to transistor M5 and a second current mirror for providing a second mirror current to transistor M6.
  • the first current mirror includes transistor M7 and the second current mirror includes transistor M8.
  • the transistor M7 and the transistor M8 may be Nmos type transistors or Pmos type transistors.
  • FIG. 10 schematically shows the case where the transistor M7 and the transistor M8 are Nmos type transistors.
  • the gate of transistor M5 is coupled to the gate of transistor M7 and the gate of transistor M6 is coupled to the gate of transistor M8.
  • the gate and drain of the transistor M7 are coupled together, both are coupled to the input Do1 of the digital-to-analog converter 104, the gate of the transistor M5 is coupled to the gate of the transistor M7; the gate and drain of the transistor M8 are coupled together, Both are coupled to the input Do2 of the digital-to-analog converter 104, the gate of the transistor M6 is coupled to the gate of the transistor M8; the source of the transistor M7 and the source of the transistor M8 are both coupled to the common ground Gnd.
  • the first pole of the capacitor C1 shown in FIG. 8 is coupled to the gate of the transistor M1 and the gate of the transistor M4; the capacitor C2 shown in FIG. 8 is coupled to the gate of the transistor M1 The first pole of is coupled to the gate of transistor M2 and the gate of transistor M3.
  • the input terminal Di of the digital-to-analog converter 104 receives the digital code, it converts the digital code into a control signal A1 and a control signal A2 based on the corresponding relationship between the digital code and the bias current, and provides the control signal A1 to the transistor M7.
  • the gate is used to control the mirror current output by the transistor M7, and the control signal A2 is provided to the gate of the transistor M8 to control the mirror current output by the transistor M8.
  • the control circuit 103 controls the on or off of the switch K1 and the switch K2 based on the digital code input from the input terminal Di of the digital-to-analog converter 104 .
  • the digital-to-analog converter 104 determines the difference between the bias current I1 and the bias current I2 based on the digital code input from the input terminal Di.
  • the gain of the variable gain amplifier 10 is adjusted by adjusting the bias parameter input to the differential circuit 101 .
  • a parasitic capacitance Cgs exists between the gate and the source of each transistor.
  • k c is the coefficient of capacitance variation with voltage, approximately a constant
  • V TH is the threshold voltage of the transistor
  • K is a constant
  • Vgs is the voltage between the gate and source of the transistor
  • g m is the voltage across the transistor Conduction, which is a fixed value
  • I is the current flowing through the transistor.
  • the total capacitance is:
  • C gs is the total parasitic capacitance
  • C gs1 and C gs2 are the parasitic capacitances of the transistor M1 and the transistor M2 respectively
  • I1 is the current flowing through the transistor M1
  • I2 is the current flowing through the transistor M2
  • I e is differential current.
  • the conventional variable gain amplifier it only includes the differential circuit 101 .
  • the parasitic capacitance C gs is one of the main factors affecting the input impedance of the variable gain amplifier, and the change of the input impedance usually leads to the change of the phase of the output signal.
  • the change of the gain of the variable gain amplifier leads to the change of the parasitic capacitance C gs , and the change of the parasitic capacitance C gs causes the input impedance to fluctuate, thus As a result, the phase of the output signal of the variable gain amplifier fluctuates with the change of the variable gain amplifier, thereby causing the phase of the signal output by the variable gain amplifier to have a deviation from the expected phase, which reduces the performance of the variable gain amplifier.
  • a conventional variable gain amplifier is used to form the phase shifter 01 as shown in FIG.
  • the phase has a second deviation, and the first deviation and the second deviation are different in magnitude, thereby causing the orthogonality of the output signal of the variable gain amplifier 012 and the output signal of the variable gain amplifier 013 to change, for example, greater than 90 degrees or less than 90 degrees , so that there is a certain error between the actual phase of the signal Out output by the phase shifter 01 and the expected output phase, which reduces the accuracy of the signal output by the phase shifter.
  • capacitance compensation can be performed on the parasitic capacitance C gs , so that when the gain of the variable gain amplifier 01 is changed, the gates of the transistor M1, the transistor M2, the transistor M3, and the transistor M4 are the same as those of the transistor M4.
  • the capacitance between the sources is stabilized within a certain range, effectively suppressing the parasitic capacitance C gs from changing with the difference current I e , thereby improving the stability of the input impedance of the variable gain amplifier, thereby improving the performance of the variable gain amplifier .
  • the phase shifter 01 has the structure shown in FIG. 5
  • the orthogonality between the signal I and the signal Q is guaranteed, thereby improving the accuracy of the signal output by the phase shifter.
  • the structure of the phase shifter 01 is shown in FIG. 5, and the structures of the variable gain amplifier 012 and the variable gain amplifier 013 are the variable gain amplifier 10 shown in FIG. 8, the structure of the phase shifter 01 is shown in FIG. 12a shown.
  • the phase shifter 01 includes a variable gain amplifier 012 and a variable gain amplifier 013.
  • the variable gain amplifier 012 includes a processor 051, a digital-to-analog converter 1041, a differential circuit 1011, a control circuit 1031 and a capacitor circuit 1021, and the digital-to-analog converter 1041 includes an input end Di1, an output end Do11 and an output end Do12, and the differential circuit 1011 includes a signal input end In1, a signal input end In2, a signal output end Io1, a signal output end Io2, a bias parameter input end Ic11 and a bias parameter input end Ic12, and the control circuit 1031 includes an input end Ci1, an output end Co11 and an output end Co12.
  • the capacitor circuit 1021 includes a plurality of capacitors C11, a plurality of capacitors C12, a plurality of switches K11 and a plurality of switches K12.
  • the structure of the variable gain amplifier 012, the connection relationship between the components, and the working principle are the same as the structure, the connection relationship between the components, and the working principle of the variable gain amplifier 10 shown in FIG. The related description of the variable gain amplifier 10 shown will not be repeated here.
  • the variable gain amplifier 013 includes a processor 052, a digital-to-analog converter 1042, a differential circuit 1012, a control circuit 1032 and a capacitor circuit 1022.
  • the digital-to-analog converter 1042 includes an input end Di2, an output end Do21 and an output end Do22
  • the differential circuit 1012 includes a signal input end Qn1, a signal input end Qn2, a signal output end Qo1, a signal output end Qo2, a bias parameter input end Ic21 and a bias parameter input end Ic22
  • the control circuit 1032 includes an input end Ci2, an output end Co21 and an output end Co22.
  • the structure of the variable gain amplifier 013, the connection relationship between the components, and the working principle are the same as the structure, the connection relationship between the components, and the working principle of the variable gain amplifier 10 shown in FIG. The related description of the variable gain amplifier 10 shown will not be repeated here.
  • the input terminal In1 and the input terminal In2 of the differential circuit 1011 are the input terminals of the variable gain amplifier 012 shown in FIG.
  • the input terminal In2 is coupled to the output terminal Go1 and the output terminal Go2 of the IQ generator 011 for inputting the signal Ia1 and the signal Ia2;
  • the input terminal Qn1 and the input terminal Qn2 of the differential circuit 1012 are the variable gain amplifier shown in FIG. 7 .
  • the input terminal of 013, the input terminal Qn1 and the input terminal Qn2 are coupled to the output terminal Go3 and the output terminal Go4 of the IQ generator 011 for inputting the signal Qa1 and the signal Qa2.
  • the output terminal Io1 and the output terminal Io2 of the differential circuit 1011 are respectively coupled to the input terminals Si1 and Si2 of the processor 014, and the output terminal Io1 and the output terminal Io2 are used to output the signal Ib1 and the signal Ib2; the output terminal Qo1 and the output terminal of the differential circuit 1012
  • the terminal Qo2 is coupled to the input terminals Si3 and Si4 of the processor 014, respectively, and the output terminal Qo1 and the output terminal Qo2 are used to output the signal Qb1 and the signal Qb2.
  • the structures of the variable gain amplifier 012 and the variable gain amplifier 013 are the structures of the variable gain amplifier 10 shown in FIG. 10, That is, when the differential circuit 1011 and the differential circuit 1012 are current-driven differential circuits, the structure of the phase shifter 01 is shown in FIG. 12b.
  • the ports of the digital-to-analog converter 1041, the digital-to-analog converter 1042, the control circuit 1031, and the control circuit 1032 refer to the relevant descriptions in FIG. 12a
  • the structures of the capacitor circuit 1021 and the capacitor circuit 1022 refer to FIG. 12a. The related descriptions are not repeated here.
  • FIG. 12b the ports of the digital-to-analog converter 1041, the digital-to-analog converter 1042, the control circuit 1031, and the control circuit 1032 refer to the relevant descriptions in FIG. 12a, and the structures of the capacitor circuit 1021 and the capacitor circuit 1022 refer to FIG. 12a. The related descriptions are not repeated here.
  • FIG. 12b the ports of the digital-to-analog
  • the differential circuit 1011 specifically includes a transistor M11, a transistor M21, a transistor M31, and a transistor M41; in addition, the variable gain amplifier 012 also includes a power supply circuit and a current mirror circuit 1051, and the current source circuit includes a transistor M51 and a transistor M61.
  • the mirror circuit 1051 includes a transistor M71 and a transistor M81.
  • the differential circuit 1012 specifically includes a transistor M12, a transistor M22, a transistor M32 and a transistor M42; in addition, the variable gain amplifier 012 also includes a power supply circuit and a current mirror circuit 1052, the power supply circuit includes a transistor M52 and a transistor M62, and the current mirror Circuit 1052 includes transistor M72 and transistor M82.
  • the connection relationship between each transistor and other components The working principle of the variable gain amplifier 012 is specifically referred to the structure of the variable gain amplifier 10 shown in FIG. 10 and the related description of the working principle, which will not be repeated here.
  • FIG. 10 shows that the differential circuit 101 is a current-driven differential circuit.
  • the differential circuit 101 may also be a voltage-driven differential circuit.
  • FIG. 13 shows yet another schematic structural diagram of the variable gain amplifier 10 .
  • the variable gain amplifier 10 includes a differential circuit 101 , a capacitance circuit 102 , a control circuit 103 , and a digital-to-analog converter 104 .
  • the differential circuit 101 shown in FIG. 13 includes transistor M5 and transistor M6 in addition to transistor M1 , transistor M2 , transistor M3 and transistor M4 .
  • the connection relationship between the transistors is the same as that shown in FIG. 10 .
  • the connection relationship between the transistors in the variable gain amplifier 10 is the same.
  • the structure of the capacitor circuit 102 is the same as the structure of the capacitor circuit 102 in FIG. 8 .
  • the structure of the control circuit 103 shown in FIG. 13 is the same as the structure and working principle of the control circuit 103 shown in FIG. 8 or FIG. This will not be repeated here.
  • the difference from the differential circuit 101 shown in FIG. 10 is that in the differential circuit 101 shown in FIG. 13 , the gate of the transistor M5 is coupled to the signal input terminal In1 of the differential circuit 101 , and the gate of the transistor M6 is coupled to the signal input terminal In1 of the differential circuit 101 .
  • the gate of the transistor M1 and the gate of the transistor M4 are coupled to the bias parameter input terminal Ic1 of the differential circuit 101
  • the gate of the transistor M2 and the gate of the transistor M3 are coupled to the differential circuit The bias parameter input terminal Ic2 of 101.
  • the output terminal Do1 of the digital-to-analog converter 104 is coupled to the gate of the transistor M1 and the gate of the transistor M4; the output terminal Do2 of the digital-to-analog converter 104 is coupled to the gate of the transistor M2 and the gate of the transistor M3.
  • the first electrode of capacitor C1 is coupled to the gate of transistor M5; the first electrode of capacitor C2 is coupled to the gate of transistor M6.
  • the gate of the transistor M1 and the gate of the transistor M4 provide the bias voltage Vd to the gates of the transistor M2 and the transistor M3.
  • the control circuit 103 controls the on or off of the switch K1 and the switch K2 based on the digital code input from the input terminal Di of the digital-to-analog converter 104 .
  • the structures of the variable gain amplifier 012 and the variable gain amplifier 013 are the structures of the variable gain amplifier 10 shown in FIG. 13, That is, when the differential circuit 1011 and the differential circuit 1012 are voltage-driven differential circuits, the structure of the phase shifter 01 is shown in FIG. 14 .
  • the ports of the differential circuit 1011 , the differential circuit 1012 , the digital-to-analog converter 1041 , the digital-to-analog converter 1042 , the control circuit 1031 , and the control circuit 1032 refer to the relevant descriptions in FIG. 12 a for details.
  • the capacitive circuit 1021 and the capacitive circuit for the structure of 1022 please refer to the related description in FIG. 12a, and for the structure of the differential circuit 1011 and the differential circuit 1012, refer to the related description in FIG. 12b, which will not be repeated here.
  • FIG. 8, FIG. 10 and FIG. 13 introduce the differential circuit for the transistors used for signal input (for example, transistor M1-transistor M4 shown in FIG. 8, transistor M5 and transistor shown in FIG. 9).
  • M6 The case where the parasitic capacitance Cgs between the gate and the source performs capacitance compensation to stabilize the input impedance.
  • the parasitic capacitance Cds is one of the factors that affects the output impedance.
  • FIG. 15 shows another schematic structural diagram of the variable gain amplifier provided by the embodiment of the present application.
  • the variable gain amplifier 10 shown in FIG. 15 includes a differential circuit 101 , a capacitance circuit 102 , a control circuit 103 , and a digital-to-analog converter 104 .
  • the components included in the differential circuit 101 shown in FIG. 15 and the connection relationship between the components are the same as those of the differential circuit 101 shown in FIG. 10 .
  • the structure of the digital-to-analog converter 104 shown in FIG. 15 is the same as the structure of the digital-to-analog converter 104 described in FIG. 8 , and details are not repeated here. Different from the structure of the variable gain amplifier 10 described in the above embodiments, in FIG.
  • the capacitor circuit 103 includes a plurality of capacitors C3 in addition to the capacitor C1 , the capacitor C2 , the switch K1 and the switch K2 , a plurality of capacitors C4, a plurality of switches K3 and a plurality of switches K4 to compensate the parasitic capacitance Cds.
  • FIG. 15 schematically shows the situation of two capacitors C3, two capacitors C4, two switches K3 and two switches K4.
  • the first pole of the capacitor C3 is coupled to the signal output terminal Io1 of the differential circuit 101, the second pole of the capacitor C3 is coupled to the first terminal of the switch K3, and the second terminal of the switch K3 is coupled to the common ground Gnd;
  • the first pole is coupled to the signal output terminal Io2 of the differential circuit 101, the second pole of the capacitor C4 is coupled to the first terminal of the switch K4, and the second terminal of the switch K4 is coupled to the common ground Gnd.
  • the output terminal Co1 of the control circuit 103 is also coupled to the control terminal of one of the switches K3 and the control terminal of one of the switches K4; the output terminal Co2 of the control circuit 103 is also coupled to the control terminal of the other switch K3 and the other switch K4 the control terminal.
  • the control principle of the control circuit 103 for the switch K3 and the switch K4 is the same as the control principle of the control circuit 103 for the switch K1 and the switch K2.
  • the differential circuit 101 included in the variable gain amplifier 10 may be either a current-driven type or a voltage-driven type.
  • the differential circuit 101 shown in FIG. 15 is a current-driven differential circuit
  • the connection relationship between the differential circuit 101 , the capacitors C1 and C2 in the capacitor circuit 102 , the control circuit 103 and the digital-to-analog converter 104 are specifically referred to in the drawing. 8-The relevant description of the variable gain amplifier 10 shown in FIG. 10 will not be repeated here; when the differential circuit 101 shown in FIG.
  • variable gain amplifier 10 is a voltage-driven differential circuit, the capacitances in the differential circuit 101 and the capacitance circuit 102
  • the connection relationship between C1 and the capacitor C2, the control circuit 103 and the digital-to-analog converter 104 can be referred to the relevant description of the variable gain amplifier 10 shown in FIG. 8 and FIG. 13 , and details are not repeated here.
  • the embodiment of the present application also provides an electronic device 300. Please refer to FIG. 16.
  • the electronic device 300 may include a transceiver 301, a memory 302, and a processor 303.
  • the transceiver 301 is provided with the device shown in FIG. 2. phased array as described in the embodiment shown.
  • the transceiver 301 may be provided with the vector phase shifter 101 described in the above embodiments to output a signal of a specific phase.
  • the transceiver 301 may also be provided with the variable gain amplifier 10 described in the above embodiments, so as to perform gain adjustment on the radio frequency signal.
  • the electronic device 300 here may specifically be a terminal device such as a smart phone, a computer, and a smart watch.
  • the terminal device may specifically include a processor 3102, a memory 3103, a communication circuit, an antenna, and an input and output device.
  • the processor 3102 is mainly used to process communication protocols and communication data, control the entire smartphone, execute software programs, and process data of the software programs, for example, to support the smartphone 310 to realize various communication functions (such as making calls, send a message or live chat, etc.).
  • the memory 3103 is mainly used for storing software programs and data.
  • the communication circuit is mainly used for the conversion of the baseband signal and the radio frequency signal and the processing of the radio frequency signal, and the communication circuit includes the above-mentioned phased array.
  • Communication circuits are mainly used to send and receive radio frequency signals in the form of electromagnetic waves.
  • Input and output devices such as touch screens, display screens, and keyboards, are mainly used to receive data input by users and output data to users.
  • the processor 3102 can read the software program in the memory 3103, interpret and execute the instructions of the software program, and process the data of the software program.
  • the output baseband signal is sent to the radio frequency circuit, and the radio frequency circuit sends the radio frequency signal to the outside in the form of electromagnetic waves through the antenna after the baseband signal is processed by radio frequency.
  • the radio frequency circuit receives the radio frequency signal through the antenna, converts the radio frequency signal into a baseband signal, and outputs the baseband signal to the processor 3102, and the processor 3102 converts the baseband signal into data and sends the data to the data. to be processed.
  • FIG. 17 only shows one memory and one processor. In an actual terminal device, there may be multiple processors and multiple memories.
  • the memory may also be referred to as a storage medium or a storage device or the like. It should be noted that the embodiment of the present application does not limit the type of the memory.

Abstract

Provided in the present application are a phase shifter, a phased array, an electronic device and a terminal device, which are characterized in that the phase shifter comprises a variable gain amplifier, and the variable gain amplifier comprises: a differential circuit, a capacitive circuit and a control circuit. The differential circuit comprises a first signal input end and a second signal input end. The capacitive circuit comprises a first capacitor, a first switch, a second capacitor and a second switch, wherein the first capacitor is coupled between the first input end of the differential circuit and a common ground by means of the first switch, and the second capacitor is coupled between the second input end of the differential circuit and the common ground by means of the second switch. The control circuit is used to control the turning-on or turning-off of the first switch and the second switch. By means of the variable gain amplifier provided by the embodiments of the present application, the quality of a communication signal can be improved.

Description

移相器、相控阵、电子设备和终端设备Phase shifters, phased arrays, electronics and terminal equipment 技术领域technical field
本申请实施例涉及无线通信领域,尤其涉及一种移相器、相控阵、电子设备和终端设备。The embodiments of the present application relate to the field of wireless communications, and in particular, to a phase shifter, a phased array, an electronic device, and a terminal device.
背景技术Background technique
伴随着科学技术的发展,通信技术得以突飞猛进的提升。在诸如毫米波通信技术中,通常采用相控阵实现波束成型和波束控制。随着5G通信技术、自动驾驶技术以及人工智能技术等各种技术的发展,对发射信号的要求越来越高,这就对移相器的精度提出了更高的要求。With the development of science and technology, communication technology has been improved by leaps and bounds. In communications technologies such as mmWave, phased arrays are typically used to achieve beamforming and beam steering. With the development of various technologies such as 5G communication technology, autonomous driving technology and artificial intelligence technology, the requirements for transmitting signals are getting higher and higher, which puts forward higher requirements for the accuracy of the phase shifter.
传统技术中,移相器移相的准确度偏差较大,从而影响了通信信号的质量。In the traditional technology, the phase shifter has a large deviation in the accuracy of the phase shift, thereby affecting the quality of the communication signal.
发明内容SUMMARY OF THE INVENTION
本申请实施例提供了一种移相器、相控阵、电子设备和终端设备,可以提高通信信号的质量。The embodiments of the present application provide a phase shifter, a phased array, an electronic device, and a terminal device, which can improve the quality of communication signals.
为达到上述目的,本申请采用如下技术方案:To achieve the above object, the application adopts the following technical solutions:
第一方面,本申请实施例提供一种移相器,所述移相器包括可变增益放大器,所述可变增益放大器包括:差分电路、电容电路和控制电路;所述差分电路,包括第一信号输入端和第二信号输入端;所述电容电路,包括第一电容、第一开关、第二电容和第二开关,所述第一电容通过所述第一开关耦合在所述差分电路的第一信号输入端与公共地之间,所述第二电容通过所述第二开关耦合在所述差分电路的第二信号输入端与公共地之间;所述控制电路,用于控制所述第一开关和所述第二开关导通或者关断。In a first aspect, an embodiment of the present application provides a phase shifter, the phase shifter includes a variable gain amplifier, and the variable gain amplifier includes: a differential circuit, a capacitor circuit, and a control circuit; the differential circuit includes a first a signal input terminal and a second signal input terminal; the capacitor circuit includes a first capacitor, a first switch, a second capacitor and a second switch, the first capacitor is coupled to the differential circuit through the first switch Between the first signal input end of the differential circuit and the common ground, the second capacitor is coupled between the second signal input end of the differential circuit and the common ground through the second switch; the control circuit is used to control all The first switch and the second switch are turned on or off.
本申请实施例通过设置电容电路和控制电路,可以对差分电路中的寄生电容进行电容补偿,可以使得差分电路中的寄生电容稳定在一定的范围内,从而提高可变增益放大器输入阻抗的稳定性,进而提高可变增益放大器的性能。By setting the capacitance circuit and the control circuit in the embodiments of the present application, capacitance compensation can be performed on the parasitic capacitance in the differential circuit, so that the parasitic capacitance in the differential circuit can be stabilized within a certain range, thereby improving the stability of the input impedance of the variable gain amplifier , thereby improving the performance of the variable gain amplifier.
在一种可能的实现方式中,所述差分电路包括第一差分电路和第二差分电路;所述第一差分电路包括第一输入端、第二输入端、第三输入端、第一输出端和第二输出端;所述第二差分电路包括第一输入端、第二输入端、第三输入端、第一输出端和第二输出端;所述第一差分电路的第一输入端和所述第二差分电路的第一输入端耦合至所述差分电路的第一信号输入端,用于输入第一信号;所述第一差分电路的第二输入端和所述第二差分电路的第二输入端耦合至所述差分电路的第二信号输入端,用于输入第二信号;所述第一差分电路的第三输入端耦合至所述差分电路的第一偏置参数输入端,用于输入第一偏置电流;所述第二差分电路的第三输入端耦合至所述差分电路的第二偏置参数输入端,用于输入第二偏置电流;所述第一差分电路的第一输出端和所述第二差分电路的第一输出端耦合至所述差分电路的第一信号输出端;所述第一差分电路的第二输出端和所述第二差分电路的第 二输出端耦合至所述差分电路的第二信号输出端。In a possible implementation manner, the differential circuit includes a first differential circuit and a second differential circuit; the first differential circuit includes a first input terminal, a second input terminal, a third input terminal, and a first output terminal and a second output terminal; the second differential circuit includes a first input terminal, a second input terminal, a third input terminal, a first output terminal and a second output terminal; the first input terminal of the first differential circuit and The first input terminal of the second differential circuit is coupled to the first signal input terminal of the differential circuit for inputting a first signal; the second input terminal of the first differential circuit and the second differential circuit The second input terminal is coupled to the second signal input terminal of the differential circuit for inputting a second signal; the third input terminal of the first differential circuit is coupled to the first bias parameter input terminal of the differential circuit, for inputting the first bias current; the third input terminal of the second differential circuit is coupled to the second bias parameter input terminal of the differential circuit for inputting the second bias current; the first differential circuit The first output terminal of the first differential circuit and the first output terminal of the second differential circuit are coupled to the first signal output terminal of the differential circuit; the second output terminal of the first differential circuit and the first output terminal of the second differential circuit The two output terminals are coupled to the second signal output terminal of the differential circuit.
在一种可能的实现方式中,所述第一信号和所述第二信号为差分信号。In a possible implementation manner, the first signal and the second signal are differential signals.
在一种可能的实现方式中,所述可变增益放大器还包括电流源电路,所述电流源电路用于为所述可变增益放大器提供偏置电流。In a possible implementation manner, the variable gain amplifier further includes a current source circuit, and the current source circuit is configured to provide a bias current for the variable gain amplifier.
在一种可能的实现方式中,所述电流源电路包括第一电流源和第二电流源;所述第一电流源用于向所述第一差分电路提供所述第一偏置电流;所述第二电流源用于向所述第二差分电路提供所述第二偏置电流。In a possible implementation manner, the current source circuit includes a first current source and a second current source; the first current source is used to provide the first bias current to the first differential circuit; the The second current source is used for providing the second bias current to the second differential circuit.
在一种可能的实现方式中,所述可变增益放大器还包括电流镜电路;所述电流镜电路用于向所述电流源提供镜像电流。In a possible implementation manner, the variable gain amplifier further includes a current mirror circuit; the current mirror circuit is configured to provide a mirror current to the current source.
在一种可能的实现方式中,所述电流镜电路包括第一电流镜和第二电流镜;所述第一电流镜用于向所述第一电流源提供第一镜像电流,所述第二电流镜用于向所述第二电流源提供第二镜像电流。In a possible implementation manner, the current mirror circuit includes a first current mirror and a second current mirror; the first current mirror is configured to provide a first mirror current to the first current source, and the second current mirror The current mirror is used to provide a second mirror current to the second current source.
在一种可能的实现方式中,所述第一电流源包括第五晶体管(例如图10所示的晶体管M5),所述第二电流源包括第六晶体管(例如图10所示的晶体管M6);所述第五晶体管的第一极耦合至所述第一差分电路的第三输入端,所述第五晶体管的第二极耦合至公共地,所述第五晶体管的控制极耦合至所述第一电流镜(例如图10所示的晶体管M7)的控制端;所述第六晶体管的第一极耦合至所述第二差分电路的第三输入端,所述第六晶体管的第二极耦合至公共地,所述第六晶体管的控制极耦合至所述第二电流镜(例如图10所示的晶体管M8)的控制端。In a possible implementation manner, the first current source includes a fifth transistor (eg, transistor M5 shown in FIG. 10 ), and the second current source includes a sixth transistor (eg, transistor M6 shown in FIG. 10 ) ; The first pole of the fifth transistor is coupled to the third input terminal of the first differential circuit, the second pole of the fifth transistor is coupled to the common ground, and the control pole of the fifth transistor is coupled to the The control terminal of the first current mirror (eg transistor M7 shown in FIG. 10 ); the first pole of the sixth transistor is coupled to the third input terminal of the second differential circuit, and the second pole of the sixth transistor Coupled to the common ground, the control terminal of the sixth transistor is coupled to the control terminal of the second current mirror (eg transistor M8 shown in FIG. 10 ).
在一种可能的实现方式中,所述可变增益放大器还包括数模转换器;所述数模转换器用于向所述电流镜电路提供控制信号。In a possible implementation manner, the variable gain amplifier further includes a digital-to-analog converter; the digital-to-analog converter is used to provide a control signal to the current mirror circuit.
在一种可能的实现方式中,所述数模转换器包括第一输出端和第二输出端;所述数模转换器的第一输出端用于向所述第一电流镜提供第一控制信号;所述数模转换器的第二输出端用于向所述第二电流镜提供第二控制信号。In a possible implementation manner, the digital-to-analog converter includes a first output terminal and a second output terminal; the first output terminal of the digital-to-analog converter is used to provide a first control to the first current mirror signal; the second output terminal of the digital-to-analog converter is used for providing a second control signal to the second current mirror.
在一种可能的实现方式中,所述控制电路用于:基于所述偏置电流,控制所述第一开关和所述第二开关导通或者关断。In a possible implementation manner, the control circuit is configured to: control the first switch and the second switch to be turned on or off based on the bias current.
在一种可能的实现方式中,所述差分电路包括第一差分电路和第二差分电路;所述第一差分电路包括第一输入端、第二输入端、第三输入端、第一输出端和第二输出端;所述第二差分电路包括第一输入端、第二输入端、第三输入端、第一输出端和第二输出端;所述第一差分电路的第一输入端和所述第二差分电路的第一输入端耦合至所述差分电路的第一偏置参数输入端,用于输入第一偏置电压;所述第一差分电路的第二输入端和所述第二差分电路的第二输入端耦合至所述差分电路的第二偏置参数输入端,用于输入第二偏置电压信号;所述第一差分电路的第三输入端耦合至所述差分电路的第一信号输入端,用于输入第一信号;所述第二差分电路的第三输入端耦合至所述差分电路的第二信号输入端,用于输入第二信号;所述第一差分电路的第一输出端和所述第二差分电路的第一输出端耦合至所述差分电路的第一信号输出端;所述第一差分电路的第二输出端和所述第二差分电路的第二输出端耦合至所述差分电路的第二信号输出端。In a possible implementation manner, the differential circuit includes a first differential circuit and a second differential circuit; the first differential circuit includes a first input terminal, a second input terminal, a third input terminal, and a first output terminal and a second output terminal; the second differential circuit includes a first input terminal, a second input terminal, a third input terminal, a first output terminal and a second output terminal; the first input terminal of the first differential circuit and The first input terminal of the second differential circuit is coupled to the first bias parameter input terminal of the differential circuit for inputting a first bias voltage; the second input terminal of the first differential circuit and the first differential circuit The second input terminal of the two differential circuit is coupled to the second bias parameter input terminal of the differential circuit for inputting a second bias voltage signal; the third input terminal of the first differential circuit is coupled to the differential circuit The first signal input terminal of the differential circuit is used for inputting the first signal; the third input terminal of the second differential circuit is coupled to the second signal input terminal of the differential circuit for inputting the second signal; the first differential circuit The first output terminal of the circuit and the first output terminal of the second differential circuit are coupled to the first signal output terminal of the differential circuit; the second output terminal of the first differential circuit and the second differential circuit The second output is coupled to the second signal output of the differential circuit.
在一种可能的实现方式中,所述可变增益放大器还包括第五晶体管和第六晶体管;所述第五晶体管的第一极耦合至所述第一差分电路的第三输入端,所述第五晶体管的第二极 耦合至公共地,所述第五晶体管的栅极用于输入第一信号;所述第六晶体管的第一极耦合至所述第二差分电路的第三输入端,所述第六晶体管的第二极耦合至公共地,所述第六晶体管的栅极用于输入第二信号。In a possible implementation manner, the variable gain amplifier further includes a fifth transistor and a sixth transistor; the first pole of the fifth transistor is coupled to the third input terminal of the first differential circuit, the The second pole of the fifth transistor is coupled to the common ground, and the gate of the fifth transistor is used to input the first signal; the first pole of the sixth transistor is coupled to the third input terminal of the second differential circuit, The second pole of the sixth transistor is coupled to the common ground, and the gate of the sixth transistor is used for inputting the second signal.
在一种可能的实现方式中,所述可变增益放大器还包括数模转换器;所述数模转换器用于向所述差分电路提供偏置电压。In a possible implementation manner, the variable gain amplifier further includes a digital-to-analog converter; the digital-to-analog converter is used to provide a bias voltage to the differential circuit.
在一种可能的实现方式中,所述数模转转换器包括第一输出端和第二输出端;所述第一输出端用于向所述第一差分电路提供第一偏置电压;所述第二输出端用于向所述第二差分电路提供第二偏置电压。In a possible implementation manner, the digital-to-analog converter includes a first output terminal and a second output terminal; the first output terminal is used to provide a first bias voltage to the first differential circuit; the The second output terminal is used for providing a second bias voltage to the second differential circuit.
在一种可能的实现方式中,所述电容电路还包括第三电容、第三开关、第四电容和第四开关,所述第三电容通过所述第三开关耦合在所述差分电路的第一信号输出端与公共地之间,所述第二电容通过第二开关耦合在所述差分电路的第二信号输出端与公共地之间。In a possible implementation manner, the capacitor circuit further includes a third capacitor, a third switch, a fourth capacitor and a fourth switch, and the third capacitor is coupled to the first capacitor of the differential circuit through the third switch. Between a signal output terminal and the common ground, the second capacitor is coupled between the second signal output terminal of the differential circuit and the common ground through a second switch.
在一种可能的实现方式中,所述差分电路为吉尔伯特结构电路;所述差分电路包括第一晶体管、第二晶体管、第三晶体管和第四晶体管;所述第一晶体管的第一极和所述第三晶体管的第一极耦合至所述差分电路的第一信号输出端;所述第二晶体管的第一极和所述第四晶体管的第一极耦合至所述差分电路的第二信号输出端;所述第一晶体管的第二极和所述第二晶体管的第二极耦合至所述差分电路的第一信号输入端或者第一偏置电流输入端;所述第三晶体管的第二极和所述第四晶体管的第二极耦合至所述差分电路的第二输入端或者第二偏置电流输入端。In a possible implementation manner, the differential circuit is a Gilbert structure circuit; the differential circuit includes a first transistor, a second transistor, a third transistor and a fourth transistor; the first pole of the first transistor and the first pole of the third transistor are coupled to the first signal output terminal of the differential circuit; the first pole of the second transistor and the first pole of the fourth transistor are coupled to the first pole of the differential circuit Two signal output terminals; the second pole of the first transistor and the second pole of the second transistor are coupled to the first signal input terminal or the first bias current input terminal of the differential circuit; the third transistor The second pole of the fourth transistor and the second pole of the fourth transistor are coupled to the second input terminal or the second bias current input terminal of the differential circuit.
在一种可能的实现方式中,所述第一晶体管、第二晶体管、第三晶体管和第四晶体管为NMOS晶体管;所述第一晶体管、第二晶体管、第三晶体管和第四晶体管为NMOS晶体管;所述第一晶体管的第一极为漏极,所述第一晶体管的第二极为源极;所述第二晶体管的第一极为漏极,所述第一晶体管的第二极为源极所述第三晶体管的第一极为漏极,所述第三晶体管的第二极为源极;所述第四晶体管的第一极为漏极,所述第四晶体管的第二极为源极。In a possible implementation manner, the first transistor, the second transistor, the third transistor and the fourth transistor are NMOS transistors; the first transistor, the second transistor, the third transistor and the fourth transistor are NMOS transistors ; The first pole of the first transistor is the drain, the second pole of the first transistor is the source; the first pole of the second transistor is the drain, and the second pole of the first transistor is the source. The first electrode of the third transistor is the drain electrode, the second electrode of the third transistor is the source electrode; the first electrode of the fourth transistor is the drain electrode, and the second electrode of the fourth transistor is the source electrode.
在一种可能的实现方式中,所述控制电路用于:基于所述差分电路的偏置电压,控制所述第一开关和所述第二开关导通或者关断。In a possible implementation manner, the control circuit is configured to: control the first switch and the second switch to be turned on or off based on the bias voltage of the differential circuit.
在一种可能的实现方式中,所述控制电路用于:从所述数模转换器获取所述数字信号,基于所述数字信号控制所述第一开关和所述第二开关导通或者关断。In a possible implementation manner, the control circuit is configured to: obtain the digital signal from the digital-to-analog converter, and control the first switch and the second switch to be turned on or off based on the digital signal break.
在一种可能的实现方式中,所述移相器包括第一输出端、第二输出端以及多个所述的可变增益放大器;所述多个可变增益放大器包括第一可变增益放大器和第二可变增益放大器;所述第一可变增益放大器的第一信号输出端和所述第二可变增益放大器的第一信号输出端均耦合至所述移相器第一输出端;所述第一可变增益放大器的第二信号输出端和所述第二可变增益放大器的第二信号输出端均耦合至所述移相器第二输出端。In a possible implementation manner, the phase shifter includes a first output end, a second output end, and a plurality of the variable gain amplifiers; the plurality of variable gain amplifiers include a first variable gain amplifier and a second variable gain amplifier; both the first signal output end of the first variable gain amplifier and the first signal output end of the second variable gain amplifier are coupled to the first output end of the phase shifter; The second signal output terminal of the first variable gain amplifier and the second signal output terminal of the second variable gain amplifier are both coupled to the second output terminal of the phase shifter.
在一种可能的实现方式中,所述移相器还包括正交发生器和处理器;所述正交发生器用于:向所述第一可变增益放大器提供第一信号和第二信号,向所述第二可变增益放大器提供第三信号和第四信号,所述第一信号和所述第二信号为差分信号,所述第三信号和所述第四信号为差分信号,所述第一信号和所述三信号为正交信号,所述第二信号和所述第四信号为正交信号;所述处理器用于:从所述第一可变增益放大器接收第五信号和第六信号,从所述第二可变增益放大器接收第七信号和第八信号,基于所述第五信号、第六信号、 第七信号和第八信号,生成矢量合成信号。In a possible implementation manner, the phase shifter further includes a quadrature generator and a processor; the quadrature generator is configured to: provide the first variable gain amplifier with the first signal and the second signal, a third signal and a fourth signal are provided to the second variable gain amplifier, the first signal and the second signal are differential signals, the third signal and the fourth signal are differential signals, the The first signal and the third signal are quadrature signals, the second signal and the fourth signal are quadrature signals; the processor is configured to: receive the fifth signal and the fourth signal from the first variable gain amplifier Six signals, a seventh signal and an eighth signal are received from the second variable gain amplifier, and a vector composite signal is generated based on the fifth signal, the sixth signal, the seventh signal and the eighth signal.
第二方面,本申请实施例提供一种可变增益放大器,所述可变增益放大器为第一方面中任意所述的可变增益放大器。In a second aspect, an embodiment of the present application provides a variable gain amplifier, where the variable gain amplifier is any of the variable gain amplifiers described in the first aspect.
第三方面,本申请实施例提供一种相控阵,所述相控阵包括多个信号传输通道和多个天线,所述多个信号传输通道与所述多个天线对应耦合;所述多个信号传输通道中的每一个信号传输通道包括如第一方面所述的移相器。In a third aspect, an embodiment of the present application provides a phased array, where the phased array includes multiple signal transmission channels and multiple antennas, and the multiple signal transmission channels are correspondingly coupled to the multiple antennas; Each of the signal transmission channels includes a phase shifter as described in the first aspect.
在一种可能的实现方式中,所述多个信号传输通道中的每一个信号传输通道还包括如上任意实现方式中所述的可变增益放大器。In a possible implementation manner, each signal transmission channel in the plurality of signal transmission channels further includes the variable gain amplifier described in any of the above implementation manners.
第四方面,本申请实施例提供一种电子设备,包括收发器,该收发器设置于电路板上,所述收发器包括如上任意实现方式中所述的相控阵。In a fourth aspect, an embodiment of the present application provides an electronic device, including a transceiver, where the transceiver is disposed on a circuit board, and the transceiver includes the phased array described in any implementation manner above.
第五方面,本申请实施例提供一种终端,所述终端包括输入输出装置和通信电路;所述通信电路包括收发器,所述收发器设置于电路板上;所述收发器包括如如上任意实现方式中所述的相控阵。In a fifth aspect, an embodiment of the present application provides a terminal, the terminal includes an input and output device and a communication circuit; the communication circuit includes a transceiver, and the transceiver is arranged on a circuit board; the transceiver includes any of the above Implement the phased array described in the method.
应当理解的是,本申请的第二至五方面与本申请的第一方面的技术方案一致,各方面及对应的可行实施方式所取得的有益效果相似,不再赘述。It should be understood that the second to fifth aspects of the present application are consistent with the technical solutions of the first aspect of the present application, and the beneficial effects obtained by each aspect and the corresponding feasible implementation manner are similar, and will not be repeated.
附图说明Description of drawings
为了更清楚地说明本申请实施例的技术方案,下面将对本申请实施例的描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本申请的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动性的前提下,还可以根据这些附图获得其他的附图。In order to illustrate the technical solutions of the embodiments of the present application more clearly, the following briefly introduces the drawings that are used in the description of the embodiments of the present application. Obviously, the drawings in the following description are only some embodiments of the present application. , for those of ordinary skill in the art, other drawings can also be obtained from these drawings without creative labor.
图1是本申请实施例提供的一种无线通信系统的结构示意图;FIG. 1 is a schematic structural diagram of a wireless communication system provided by an embodiment of the present application;
图2为本申请实施例提供的一种相控阵的架构示意图;FIG. 2 is a schematic structural diagram of a phased array provided by an embodiment of the present application;
图3为本申请实施例提供的一种相控阵工作原理示意图;3 is a schematic diagram of the working principle of a phased array provided by an embodiment of the present application;
图4是本申请实施例提供的相控阵的一个结构示意图;4 is a schematic structural diagram of a phased array provided by an embodiment of the present application;
图5是本申请实施例提供的射频信号发射通道的一个结构示意图;5 is a schematic structural diagram of a radio frequency signal transmission channel provided by an embodiment of the present application;
图6是本申请实施例提供的射频信号发射通道的一个结构示意图;6 is a schematic structural diagram of a radio frequency signal transmission channel provided by an embodiment of the present application;
图7是本申请实施例提供的矢量移相器的一个结构示意图;7 is a schematic structural diagram of a vector phase shifter provided by an embodiment of the present application;
图8是本申请实施例提供的可变增益放大器的一个结构示意图;8 is a schematic structural diagram of a variable gain amplifier provided by an embodiment of the present application;
图9是本申请实施例提供的控制电路的一个结构示意图;9 is a schematic structural diagram of a control circuit provided by an embodiment of the present application;
图10是本申请实施例提供的可变增益放大器的一个具体结构示意图;10 is a schematic structural diagram of a variable gain amplifier provided by an embodiment of the present application;
图11是本申请实施例提供的晶体管栅源寄生电容随差值电流变化情况的示意图;11 is a schematic diagram of the variation of the gate-source parasitic capacitance of the transistor with the differential current provided by the embodiment of the present application;
图12a是本申请实施例提供的采用如图8所示的可变增益放大器形成的矢量移相器的一个结构示意图;12a is a schematic structural diagram of a vector phase shifter formed by using the variable gain amplifier shown in FIG. 8 provided by an embodiment of the present application;
图12b是本申请实施例提供的采用如图10所示的可变增益放大器形成的矢量移相器的一个结构示意图;12b is a schematic structural diagram of a vector phase shifter formed by using the variable gain amplifier shown in FIG. 10 provided by an embodiment of the present application;
图13是本申请实施例提供的可变增益放大器的又一个具体结构示意图;13 is another specific structural schematic diagram of the variable gain amplifier provided by the embodiment of the present application;
图14是本申请实施例提供的采用如图13所示的可变增益放大器形成的矢量移相器的一个结构示意图;14 is a schematic structural diagram of a vector phase shifter formed by using the variable gain amplifier shown in FIG. 13 provided by an embodiment of the present application;
图15是本申请实施例提供的可变增益放大器的又一个具体结构示意图;FIG. 15 is another specific structural schematic diagram of the variable gain amplifier provided by the embodiment of the present application;
图16是本申请实施例提供的电子设备的一个结构示意图;16 is a schematic structural diagram of an electronic device provided by an embodiment of the present application;
图17是本申请实施例提供的终端设备的一个结构示意图。FIG. 17 is a schematic structural diagram of a terminal device provided by an embodiment of the present application.
具体实施方式Detailed ways
下面将结合本申请实施例中的附图,对本申请实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例是本申请一部分实施例,而不是全部的实施例。基于本申请中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本申请保护的范围。The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present application.
本文所提及的"第一"、"第二"以及类似的词语并不表示任何顺序、数量或者重要性,而只是用来区分不同的组成部分。同样,"一个"或者"一"等类似词语也不表示数量限制,而是表示存在至少一个。"连接"或者"耦合"等类似的词语并非限定于物理的或者机械的连接,而是可以包括电性的连接,不管是直接的还是间接的,等同于广义上的耦合或联通。References herein to "first," "second," and similar terms do not denote any order, quantity, or importance, but are merely used to distinguish the various components. Likewise, words such as "a" or "an" do not denote a quantitative limitation, but rather denote the presence of at least one. Words like "connected" or "coupled" are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect, equivalent to coupling or communicating in a broad sense.
在本申请实施例中,“示例性的”或者“例如”等词用于表示作例子、例证或说明。本申请实施例中被描述为“示例性的”或者“例如”的任何实施例或设计方案不应被解释为比其它实施例或设计方案更优选或更具优势。确切而言,使用“示例性的”或者“例如”等词旨在以具体方式呈现相关概念。在本申请实施例的描述中,除非另有说明,“多个”的含义是指两个或两个以上。例如,多个射频信号发射通道是指两个或两个以上的射频信号发射通道。In the embodiments of the present application, words such as "exemplary" or "for example" are used to represent examples, illustrations or illustrations. Any embodiments or designs described in the embodiments of the present application as "exemplary" or "such as" should not be construed as preferred or advantageous over other embodiments or designs. Rather, the use of words such as "exemplary" or "such as" is intended to present the related concepts in a specific manner. In the description of the embodiments of the present application, unless otherwise specified, the meaning of "plurality" refers to two or more. For example, multiple radio frequency signal transmission channels refer to two or more radio frequency signal transmission channels.
无线通信系统中,设备可分为提供无线网络服务的设备和使用无线网络服务的设备。提供无线网络服务的设备是指那些组成无线通信网络的设备,可简称为网络设备(network equipment),或网络单元(network element)。网络设备通常归属于运营商(如中国移动和Vodafone)或基础设施提供商(如铁塔公司),并由这些厂商负责运营或维护。网络设备还可进一步分为无线接入网(radio access network,RAN)设备以及核心网(core network,CN)设备。典型的RAN设备包括基站(base station,BS)。In a wireless communication system, devices can be divided into devices that provide wireless network services and devices that use wireless network services. The devices that provide wireless network services refer to those devices that make up a wireless communication network, which can be referred to as network equipment or network elements for short. Network equipment is usually owned by operators (such as China Mobile and Vodafone) or infrastructure providers (such as tower companies), and these manufacturers are responsible for operation or maintenance. Network devices can be further classified into radio access network (RAN) devices and core network (core network, CN) devices. A typical RAN device includes a base station (BS).
应理解,基站有时也可以被称为无线接入点(access point,AP),或发送接收点(transmission reception point,TRP)。具体地,基站可以是5G新无线电(new radio,NR)系统中的通用节点B(generation Node B,gNB),4G长期演进(long term evolution,LTE)系统的演进节点B(evolutional Node B,eNB)。根据基站的物理形态或发射功率的不同,基站可被分为宏基站(macro base station)或微基站(micro base station)。微基站有时也被称为小基站或小小区(small cell)。It should be understood that the base station may also sometimes be referred to as a wireless access point (access point, AP), or a transmission reception point (transmission reception point, TRP). Specifically, the base station may be a general node B (generation Node B, gNB) in a 5G new radio (new radio, NR) system, or an evolutional Node B (evolutional Node B, eNB) in a 4G long term evolution (long term evolution, LTE) system. ). Base stations can be classified into macro base stations or micro base stations according to their physical form or transmit power. Micro base stations are also sometimes referred to as small base stations or small cells.
使用无线网络服务的设备通常位于网络的边缘,可简称为终端(terminal)。终端能够与网络设备建立连接,并基于网络设备的服务为用户提供具体的无线通信业务。应理解,由于终端与用户的关系更加紧密,有时也被称为用户设备(user equipment,UE),或订户单元(subscriber unit,SU)。此外,相对于通常在固定地点放置的基站,终端往往随着用户一起移动,有时也被称为移动台(mobile station,MS)。此外,有些网络设备,例如中继节点(relay node,RN)或者无线路由器等,由于具备UE身份,或者归属于用户,有时也可被认为是终端。Devices using wireless network services are usually located at the edge of the network and may be referred to as a terminal for short. The terminal can establish a connection with the network device, and provide the user with specific wireless communication services based on the service of the network device. It should be understood that because the terminal has a closer relationship with the user, it is sometimes also referred to as user equipment (user equipment, UE), or subscriber unit (subscriber unit, SU). In addition, as opposed to base stations, which are usually placed in fixed locations, terminals tend to move with users and are sometimes referred to as mobile stations (mobile stations, MSs). In addition, some network devices, such as relay nodes (relay nodes, RNs) or wireless routers, can sometimes be regarded as terminals because they have UE identity or belong to users.
具体地,终端可以是移动电话(mobile phone),平板电脑(tablet computer),膝上型电脑(laptop computer),可穿戴设备(比如智能手表,智能手环,智能头盔,智能眼镜), 以及其他具备无线接入能力的设备,如智能汽车,各种物联网(internet of thing,IOT)设备,包括各种智能家居设备(比如智能电表和智能家电)以及智能城市设备(比如安防或监控设备,智能道路交通设施)等。Specifically, the terminal may be a mobile phone (mobile phone), a tablet computer (tablet computer), a laptop computer (laptop computer), a wearable device (such as a smart watch, smart bracelet, smart helmet, smart glasses), and other Devices with wireless access capabilities, such as smart cars, various Internet of things (IOT) devices, including various smart home devices (such as smart meters and smart home appliances) and smart city devices (such as security or monitoring equipment, intelligent road transport facilities), etc.
为了便于表述,本申请中将以基站和终端为例,详细说明本申请实施例的技术方案。For ease of expression, the present application will take the base station and the terminal as examples to describe the technical solutions of the embodiments of the present application in detail.
图1为本申请实施例提供的一种无线通信系统的结构示意图。如图1所示,无线通信系统,基站A,基站B,基站C。FIG. 1 is a schematic structural diagram of a wireless communication system according to an embodiment of the present application. As shown in Figure 1, the wireless communication system, base station A, base station B, base station C.
该无线通信系统中,该无线通信系统可以遵从第三代合作伙伴计划(third generation partnership project,3GPP)的无线通信标准,也可以遵从其他无线通信标准,例如电气电子工程师学会(Institute of Electrical and Electronics Engineers,IEEE)的802系列(如802.11,802.15,或者802.20)的无线通信标准。In the wireless communication system, the wireless communication system may comply with the wireless communication standard of the third generation partnership project (3GPP), or may comply with other wireless communication standards, such as the Institute of Electrical and Electronics Engineers (Institute of Electrical and Electronics). Engineers, IEEE) wireless communication standards of the 802 series (eg, 802.11, 802.15, or 802.20).
图1中虽然仅示出了三个基站和一个终端,该无线通信系统也可包括其他数目的终端和基站。此外,该无线通信系统还可包括其他的网络设备,比如核心网设备。Although only three base stations and one terminal are shown in FIG. 1 , the wireless communication system may also include other numbers of terminals and base stations. In addition, the wireless communication system may further include other network devices, such as core network devices.
终端和基站应知晓该无线通信系统预定义的配置,包括系统支持的无线电接入技术(radio access technology,RAT)以及系统规定的无线资源配置等,比如无线电的频段和载波的基本配置。载波是符合系统规定的一段频率范围。这段频率范围可由载波的中心频率(记为载频)和载波的带宽共同确定。这些系统预定义的配置可作为无线通信系统的标准协议的一部分,或者通过终端和基站间的交互确定。相关标准协议的内容,可能会预先存储在终端和基站的存储器中,或者体现为终端和基站的硬件电路或软件代码。The terminal and the base station should know the predefined configuration of the wireless communication system, including the radio access technology (RAT) supported by the system and the wireless resource configuration specified by the system, such as the basic configuration of the radio frequency band and carrier. A carrier is a frequency range that conforms to system regulations. This frequency range can be determined by the center frequency of the carrier (referred to as the carrier frequency) and the bandwidth of the carrier. The pre-defined configurations of these systems can be used as part of the standard protocols of the wireless communication system, or determined by the interaction between the terminal and the base station. The content of the relevant standard protocol may be pre-stored in the memory of the terminal and the base station, or embodied as hardware circuits or software codes of the terminal and the base station.
该无线通信系统中,终端和基站支持一种或多种相同的RAT,例如5G NR、或未来演进系统的RAT。具体地,终端和基站采用相同的空口参数、编码方案和调制方案等,并基于系统规定的无线资源相互通信。In this wireless communication system, the terminal and the base station support one or more of the same RATs, such as 5G NR, or RATs of future evolution systems. Specifically, the terminal and the base station use the same air interface parameters, coding scheme, modulation scheme, etc., and communicate with each other based on radio resources specified by the system.
图1中集成了相控阵的终端可以通过不同的配置,可以分别定向指向基站A、基站B、基站C。相比于传统的终端,具有相控阵功能的终端可以通过相控阵的功能实现能量更集中的传输,从而一定程度缓解了在高频,特别是毫米波频率范围下,信号传输的路径损耗。The terminal integrated with the phased array in FIG. 1 can be directed to base station A, base station B, and base station C through different configurations. Compared with traditional terminals, terminals with phased array function can realize more concentrated energy transmission through the function of phased array, thereby reducing the path loss of signal transmission at high frequencies, especially in the millimeter wave frequency range. .
图2为本申请实施例提供的一种相控阵的架构示意图。如图2所示的相控阵可以应用于如图1所示的应用场景中。在图2中,相控阵可以包括多个射频信号发射通道,每一个射频信号发射通道的输出端与天线TX耦合,每个射频信号发射通道都包括相应的移相器。当相控阵需要指向特定的方向,实现特定方向的波束时,可以通过相控阵中的移相器将对相应射频信号发射通道的信号进行移相,从而可以得到特定方向的方向图。当相控阵需要动态覆盖多个方向时,相控阵可通过相位扫描的方式实现。由于相控阵系统需要较大的扫描角度,对于每个射频信号发射通道的移相器的移相精度和移相范围都有一定的要求。FIG. 2 is a schematic structural diagram of a phased array according to an embodiment of the present application. The phased array shown in FIG. 2 can be applied to the application scenario shown in FIG. 1 . In FIG. 2 , the phased array may include a plurality of radio frequency signal transmission channels, the output end of each radio frequency signal transmission channel is coupled to the antenna TX, and each radio frequency signal transmission channel includes a corresponding phase shifter. When the phased array needs to point in a specific direction to realize a beam in a specific direction, the phase shifter in the phased array can phase-shift the signal of the corresponding RF signal transmission channel, so that the pattern of the specific direction can be obtained. When the phased array needs to dynamically cover multiple directions, the phased array can be implemented by phase scanning. Since the phased array system needs a large scanning angle, there are certain requirements for the phase shift accuracy and phase shift range of the phase shifter of each radio frequency signal transmission channel.
下面以图3为例,对相控阵的工作原理进行介绍。图3示出的相控阵架构包括8个支路,为了实现360度全范围覆盖,8个支路可以实现的相位范围为0-7Ф,每个移相单位Ф为45度。8个支路中的移相器的移相范围可以具有不同的移相精度。各支路中的移相器的移相精度可以包括但不限于:2 0Ф=Ф,2 1Ф=2Ф,2 2Ф=4Ф。每个支路的最小移相位为0Ф也就是0度,最大的移相位为7Ф也就是315度。为了实现更高的相位扫描精度,还可以改变每个支路的最小移相精度Ф,例如可以将每个支路的最小移相精度Ф设置为22.5度。 The working principle of the phased array is introduced below by taking FIG. 3 as an example. The phased array architecture shown in FIG. 3 includes 8 branches. In order to achieve 360-degree full-range coverage, the 8 branches can achieve a phase range of 0-7Ф, and each phase shift unit Ф is 45 degrees. The phase shift ranges of the phase shifters in the 8 branches can have different phase shift accuracies. The phase shift accuracy of the phase shifters in each branch may include, but is not limited to: 2 0 Ф=Ф, 2 1 Ф=2Ф, 2 2 Ф=4Ф. The minimum phase shift of each branch is 0Ф, which is 0 degrees, and the maximum phase shift is 7Ф, which is 315 degrees. In order to achieve higher phase scanning accuracy, the minimum phase shift accuracy Φ of each branch can also be changed, for example, the minimum phase shift accuracy Φ of each branch can be set to 22.5 degrees.
基于相控阵的工作原理,可以理解,相控阵为了实现发射信号的功能,需要在上述实施例中的每个射频信号发射通道中集成诸如功率放大器和移相器等设备。请继续参考图4, 其示出了本申请实施例提供的相控阵100的结构示意图。在图4中,相控阵100包括射频信号发射通道T1、T2、T3…Tn。此外,相控阵100还可以包括功分单元G、混频器M和本地振荡器LO等。其中,本地振荡器LO用于产生本振信号提供至混频器M;混频器M对本振信号和所输入的基频信号(或者中频信号)混频后生成射频信号提供至功分单元G。功分单元G将所接收到的射频信号分成多路信号,通过射频信号发射通道T1、T2、T3…Tn发射。功分单元G可以包括多个功分器,图中未示出该多个功分器。另外,相控阵100还可以包括诸如锁相环等其他器件,本申请实施例对此不再赘述。Based on the working principle of the phased array, it can be understood that, in order to realize the function of transmitting signals, the phased array needs to integrate devices such as power amplifiers and phase shifters in each radio frequency signal transmitting channel in the foregoing embodiment. Please continue to refer to FIG. 4 , which shows a schematic structural diagram of the phased array 100 provided by the embodiment of the present application. In FIG. 4 , the phased array 100 includes radio frequency signal transmission channels T1 , T2 , T3 . . . Tn. In addition, the phased array 100 may further include a power division unit G, a mixer M, a local oscillator LO, and the like. Wherein, the local oscillator LO is used to generate a local oscillator signal and provide it to the mixer M; the mixer M mixes the local oscillator signal and the input fundamental frequency signal (or intermediate frequency signal) to generate a radio frequency signal and provide it to the power division unit G . The power division unit G divides the received radio frequency signal into multiple signals, and transmits them through the radio frequency signal transmission channels T1, T2, T3...Tn. The power division unit G may include a plurality of power dividers, which are not shown in the figure. In addition, the phased array 100 may further include other devices such as a phase-locked loop, which will not be repeated in this embodiment of the present application.
如图4所示的射频信号发射通道T1、T2、T3…Tn中,每一个射频信号发射通道可以包括移相器01(PS,Phase Shifter)和功率放大器02(PA,Power Amplifier),如图5所示。其中,移相器01可以为负载传输线、反射型、交换网络等类型的无源移相器,移相器01还可以为矢量移相器。当移相器01为负载传输线、反射型、交换网络等类型的移相器时,每一个射频信号发射通道还包括可变增益放大器03(VGA,Variable Gain Amplifier)。该可变增益放大器03可以耦合在移相器01和功率放大器02之间,其用于对移相器01输出的信号进行增益调节,如图6所示。当移相器为矢量移相器时,每一个射频信号发射通道中可以设置可变增益放大器03,也可以不设置可变增益放大器03。例如,当相位扫描精度要求较高时,每一个射频信号发射通道中可以设置可变增益放大器03;当相位扫描精度要求较低时,每一个射频信号发射通道中可以不设置可变增益放大器03。In the RF signal transmission channels T1, T2, T3...Tn shown in Figure 4, each RF signal transmission channel may include a phase shifter 01 (PS, Phase Shifter) and a power amplifier 02 (PA, Power Amplifier), as shown in the figure 5 shown. Wherein, the phase shifter 01 may be a passive phase shifter of a load transmission line, a reflection type, a switching network, etc., and the phase shifter 01 may also be a vector phase shifter. When the phase shifter 01 is a phase shifter of a load transmission line, a reflection type, a switching network, etc., each radio frequency signal transmission channel also includes a variable gain amplifier 03 (VGA, Variable Gain Amplifier). The variable gain amplifier 03 can be coupled between the phase shifter 01 and the power amplifier 02, and is used to perform gain adjustment on the signal output by the phase shifter 01, as shown in FIG. 6 . When the phase shifter is a vector phase shifter, the variable gain amplifier 03 may be set in each radio frequency signal transmission channel, or the variable gain amplifier 03 may not be set. For example, when the phase scanning accuracy is required to be high, the variable gain amplifier 03 can be set in each RF signal transmission channel; when the phase scanning accuracy requirement is low, the variable gain amplifier 03 may not be set in each RF signal transmission channel .
本申请实施例中所述的移相器01为矢量移相器时,该矢量移相器可以包括同相正交(IQ,In-phase Quadrature)发生器以及多个可变增益放大器,此时,移相器01的结构如图7所示。在图7中,移相器01包括IQ发生器011、可变增益放大器012、可变增益放大器013和处理器014。其中,IQ发生器011的输出端Go1与可变增益放大器012的第一输入端耦合,IQ发生器011的输出端Go2与可变增益放大器012的第二输入端耦合。IQ发生器011的输出端Go3与可变增益放大器013的第一输入端耦合,IQ的发生器011的输出端Go4与可变增益放大器013的第二输入端耦合。可变增益放大器012的第一输出端耦合至处理器014的输入端Si1;可变增益放大器012的第二输出端耦合至处理器014的输入端Si2;可变增益放大器013的第一输出端耦合至处理器014的输入端Si3,可变增益放大器013的第二输出端耦合至处理器014的输入端Si4;处理器014的输出端So1和So2作为移相器01的输出端用于输出信号。具体工作中,IQ发生器011对所接收到的射频信号进行处理,生成信号Ia1、信号Ia2、信号Qa1和信号Qa2该四路信号,其中信号Ia1和信号Qa1为一对正交信号(即幅度相同、相位正交的信号),信号Ia2和信号Qa2为一对正交信号,信号Ia1和信号Ia2为一对差分信号(即幅度相同、相位反相的信号),信号Qa1和信号Qa2为一对差分信号。IQ发生器011将信号Ia1和信号Ia2提供至可变增益放大器012,IQ发生器011将信号Qa1和信号Qa2提供至可变增益放大器013。然后,可变增益放大器012对信号Ia1和信号Ia2进行增益调节生成信号Ib1和信号Ib2,可变增益放大器013对信号Qa1和信号Qa2进行增益调节生成信号Qb1和信号Qb2。其中,信号Ib1和信号Ib2为一对差分信号,信号Qb1和信号Qb2为一对差分信号。处理器014对信号Ib1、信号Ib2、信号Qb1和信号Qb2进行矢量合成,最终输出具有特定相位的信号Vo1和信号Vo2,其中信号Vo1和信号Vo2为一对差分信号。When the phase shifter 01 described in the embodiments of the present application is a vector phase shifter, the vector phase shifter may include an in-phase quadrature (IQ, In-phase Quadrature) generator and a plurality of variable gain amplifiers. In this case, The structure of the phase shifter 01 is shown in FIG. 7 . In FIG. 7 , the phase shifter 01 includes an IQ generator 011 , a variable gain amplifier 012 , a variable gain amplifier 013 and a processor 014 . The output terminal Go1 of the IQ generator 011 is coupled to the first input terminal of the variable gain amplifier 012 , and the output terminal Go2 of the IQ generator 011 is coupled to the second input terminal of the variable gain amplifier 012 . The output terminal Go3 of the IQ generator 011 is coupled to the first input terminal of the variable gain amplifier 013 , and the output terminal Go4 of the IQ generator 011 is coupled to the second input terminal of the variable gain amplifier 013 . The first output terminal of the variable gain amplifier 012 is coupled to the input terminal Si1 of the processor 014; the second output terminal of the variable gain amplifier 012 is coupled to the input terminal Si2 of the processor 014; the first output terminal of the variable gain amplifier 013 Coupled to the input end Si3 of the processor 014, the second output end of the variable gain amplifier 013 is coupled to the input end Si4 of the processor 014; the output ends So1 and So2 of the processor 014 are used as the output ends of the phase shifter 01 for output Signal. In the specific operation, the IQ generator 011 processes the received radio frequency signal to generate four signals of signal Ia1, signal Ia2, signal Qa1 and signal Qa2, wherein the signal Ia1 and the signal Qa1 are a pair of quadrature signals (that is, the amplitude Signals with the same and quadrature phases), the signal Ia2 and the signal Qa2 are a pair of quadrature signals, the signal Ia1 and the signal Ia2 are a pair of differential signals (that is, the signals with the same amplitude and opposite phases), the signal Qa1 and the signal Qa2 are a pair of differential signals for differential signals. The IQ generator 011 provides the signal Ia1 and the signal Ia2 to the variable gain amplifier 012 , and the IQ generator 011 provides the signal Qa1 and the signal Qa2 to the variable gain amplifier 013 . Then, the variable gain amplifier 012 performs gain adjustment on the signals Ia1 and Ia2 to generate the signals Ib1 and Ib2, and the variable gain amplifier 013 performs gain adjustment on the signals Qa1 and Qa2 to generate the signals Qb1 and Qb2. The signal Ib1 and the signal Ib2 are a pair of differential signals, and the signal Qb1 and the signal Qb2 are a pair of differential signals. The processor 014 performs vector synthesis on the signal Ib1, the signal Ib2, the signal Qb1 and the signal Qb2, and finally outputs the signal Vo1 and the signal Vo2 with a specific phase, wherein the signal Vo1 and the signal Vo2 are a pair of differential signals.
如图4所示的射频信号发射通道T1、T2、T3…Tn中,当每一个射频信号发射通道均 包括可变增益放大器03时,可变增益放大器03的结构可以采用如图8、图10、图13或者图15任意一个实施例所述的可变增益放大器10的结构。此外,如图7所示的移相器01中所包括的可变增益放大器012和可变增益放大器013,也可以采用如图8、图10、图13或者图15任意一个实施例所述的可变增益放大器10的结构。下面对本申请实施例中所述的可变增益放大器进行详细描述。In the radio frequency signal transmission channels T1, T2, T3...Tn shown in FIG. 4, when each radio frequency signal transmission channel includes a variable gain amplifier 03, the structure of the variable gain amplifier 03 can be as shown in FIG. 8 and FIG. 10. , the structure of the variable gain amplifier 10 described in any one of the embodiments in FIG. 13 or FIG. 15 . In addition, the variable gain amplifier 012 and the variable gain amplifier 013 included in the phase shifter 01 as shown in FIG. 7 may also be the ones described in any one of the embodiments of FIG. 8 , FIG. 10 , FIG. 13 or FIG. 15 . The structure of the variable gain amplifier 10 . The variable gain amplifier described in the embodiments of the present application will be described in detail below.
请参考图8,图8为本申请实施例提供的可变增益放大器的一个结构示意图。如图8所示,可变增益放大器10包括差分电路101、电容电路102、控制电路103和数模转换器104。其中,差分电路101包括信号输入端In1、信号输入端In2、偏置参数输入端Ic1、偏置参数输入端Ic2、信号输出端Io2和信号输出端Io2。差分电路101的信号输入端In1和信号输入端In2为可变增益放大器10的信号输入端。差分电路101的信号输出端Io1和信号输出端Io2为可变增益放大器10的信号输出端。差分电路101的偏置参数输入端Ic1、偏置参数输入端Ic2分别耦合至数模转换器104的输出端Do1和输出端Do2,数模转换器104的输入端Di用于输入数字信号,其中,差分电路101的偏置参数不同,所输入的数字信号不同。电容电路102包括M个电容C1、M个电容C2、M个开关K1和M个开关K2。其中,M为大于等于1的整数。M个电容C1通过M个开关K1并联连接在信号输入端In1和公共地Gnd之间;M个电容C2通过M个开关K2并联连接在信号输入端In2和公共地Gnd之间。图8中示意性的示出了2个电容C1、2个电容C2、2个开关K1和2个开关K2的情况。下面以M为2为例,对图8所示的可变增益放大器10的结构进行详细描述。2个电容C1的第一极均耦合至信号输入端In1,2个电容C1的第二极与2个开关K1的第一端一一对应耦合,2个开关K1的第二端均耦合至公共地Gnd;2个电容C2的第一极均耦合至信号输入端In2,2个电容C2的第二极与2个开关K2的第一端一一对应耦合,2个开关K2的第二端均耦合至公共地Gnd。控制电路103可以基于差分电路101的偏置参数,控制各开关K1和各开关K2的导通或者关断。控制电路103可以为分立器件组成的电路,也可以为可编程逻辑器件形成的电路。在一种可能的实现方式中,控制电路103的输入端Ci耦合至数模转换器104的输入端Di,基于数模转换器104输入的数字信号确定出差分电路101的偏置参数,控制电路103的输出端Co1耦合至其中一个开关K1的控制端以及其中一个开关K2的控制端,控制电路103的输出端Co2耦合至另外一个开关K1的控制端以及另外一个开关K2的控制端。本申请实施例中,与相同的输出端耦合的开关K1和开关K2具有相同的导通和关断状态。例如,与输出端Co1耦合的开关K1和开关K2同时导通或同时关断。需要说明的是,与同一个信号输入端耦合的M个电容的大小可以相同,也可以不同。优选地,与同一个信号输入端耦合的M个电容的大小不同。例如,与信号输入端In1耦合的两个电容C1的大小不同,其中一个电容C1的大小可以是另外一个电容C1的两倍;与信号入端In2耦合的两个电容C2的大小不同,其中一个电容C2的大小可以是另外一个电容C2的两倍。此外,与控制电路103的输出端Co1耦合的开关K1和开关K2,其所耦合的电容C1和电容C2大小相等;与控制电路103的输出端Co2耦合的开关K1和开关K2,其所耦合的电容C1和电容C2大小相等。Please refer to FIG. 8 , which is a schematic structural diagram of a variable gain amplifier provided by an embodiment of the present application. As shown in FIG. 8 , the variable gain amplifier 10 includes a differential circuit 101 , a capacitor circuit 102 , a control circuit 103 and a digital-to-analog converter 104 . The differential circuit 101 includes a signal input terminal In1, a signal input terminal In2, an offset parameter input terminal Ic1, an offset parameter input terminal Ic2, a signal output terminal Io2, and a signal output terminal Io2. The signal input terminal In1 and the signal input terminal In2 of the differential circuit 101 are the signal input terminals of the variable gain amplifier 10 . The signal output terminal Io1 and the signal output terminal Io2 of the differential circuit 101 are the signal output terminals of the variable gain amplifier 10 . The bias parameter input terminal Ic1 and the bias parameter input terminal Ic2 of the differential circuit 101 are respectively coupled to the output terminal Do1 and the output terminal Do2 of the digital-to-analog converter 104, and the input terminal Di of the digital-to-analog converter 104 is used for inputting digital signals, wherein , the offset parameters of the differential circuit 101 are different, and the input digital signals are different. The capacitor circuit 102 includes M capacitors C1, M capacitors C2, M switches K1 and M switches K2. Among them, M is an integer greater than or equal to 1. M capacitors C1 are connected in parallel between the signal input terminal In1 and the common ground Gnd through M switches K1; M capacitors C2 are connected in parallel between the signal input terminal In2 and the common ground Gnd through M switches K2. FIG. 8 schematically shows the situation of two capacitors C1 , two capacitors C2 , two switches K1 and two switches K2 . The structure of the variable gain amplifier 10 shown in FIG. 8 will be described in detail below by taking M as 2 as an example. The first poles of the two capacitors C1 are both coupled to the signal input terminal In1, the second poles of the two capacitors C1 are coupled to the first terminals of the two switches K1 in a one-to-one correspondence, and the second terminals of the two switches K1 are both coupled to the common Ground Gnd; the first poles of the two capacitors C2 are both coupled to the signal input terminal In2, the second poles of the two capacitors C2 are coupled to the first terminals of the two switches K2 in one-to-one correspondence, and the second terminals of the two switches K2 are both Coupled to common ground Gnd. The control circuit 103 may control each switch K1 and each switch K2 to be turned on or off based on the bias parameter of the differential circuit 101 . The control circuit 103 may be a circuit composed of discrete devices or a circuit composed of programmable logic devices. In a possible implementation manner, the input end Ci of the control circuit 103 is coupled to the input end Di of the digital-to-analog converter 104, and the bias parameter of the differential circuit 101 is determined based on the digital signal input by the digital-to-analog converter 104, and the control circuit The output terminal Co1 of 103 is coupled to the control terminal of one of the switches K1 and the control terminal of one of the switches K2, and the output terminal Co2 of the control circuit 103 is coupled to the control terminal of the other switch K1 and the control terminal of the other switch K2. In the embodiment of the present application, the switch K1 and the switch K2 coupled to the same output terminal have the same on and off states. For example, the switch K1 and the switch K2 coupled to the output terminal Co1 are turned on at the same time or turned off at the same time. It should be noted that the size of the M capacitors coupled to the same signal input end may be the same or different. Preferably, the M capacitors coupled to the same signal input terminal have different sizes. For example, the size of the two capacitors C1 coupled with the signal input terminal In1 is different, and the size of one capacitor C1 can be twice that of the other capacitor C1; the size of the two capacitors C2 coupled with the signal input terminal In2 is different, one of which The size of the capacitor C2 can be twice the size of the other capacitor C2. In addition, the switch K1 and switch K2 coupled with the output terminal Co1 of the control circuit 103 have the same size as the capacitor C1 and the capacitor C2; the switch K1 and the switch K2 coupled with the output terminal Co2 of the control circuit 103 are Capacitor C1 and capacitor C2 are equal in size.
基于如上所述的可变增益放大器10的结构,具体工作中,数模转换器104的输入端Di耦合至处理器05,以从处理器05获取数字信号。该数字信号可以为多位比特位的数字码,该数字码用于指示输入至差分电路101的偏置参数输入端Ic1和偏置参数输入端Ic2 的偏置参数的值。所述的偏置参数可以包括偏置电压或者偏置电流。本申请实施例中所述的差分电路101可以为电流驱动型差分电路,也可以为电压驱动型差分电路。当差分电路101为电流驱动型差分电路时,上述偏置参数为偏置电流;当差分电路101为电压驱动型差分电路时,上述偏置参数为偏置电压。处理器05可以基于可变增益放大器10所要输出的增益的大小,生成数字码提供至数模转换器104。数模转换器104从处理器05接收到数字码后,基于数字码-偏置参数之间的对应关系,将数字码转换成模拟量,提供至差分电路101。需要说明的是,本申请实施例对输入至数模转换器104中的数字码的位数不做限定,当需要更精细的调节偏置参数时,可以将数字码设置更多的位数。控制电路103基于数模转换器104的输入端Di输入的数字码,控制开关K1或者开关K2导通或关断,从而使得至少一个电容C1耦合在差分电路101的信号输入端In1与公共地Gnd之间,或者断开所述至少一个电容C1与公共地Gnd之间的连接;以及,使得至少一个电容C2耦合在差分电路101的信号输入端In2与公共地Gnd之间,或者断开所述至少一个电容C2与公共地Gnd之间的连接。Based on the structure of the variable gain amplifier 10 as described above, in a specific operation, the input end Di of the digital-to-analog converter 104 is coupled to the processor 05 to obtain a digital signal from the processor 05 . The digital signal may be a multi-bit digital code for indicating the value of the offset parameter input to the offset parameter input terminal Ic1 and the offset parameter input terminal Ic2 of the differential circuit 101 . The bias parameter may include bias voltage or bias current. The differential circuit 101 described in the embodiments of the present application may be a current-driven differential circuit or a voltage-driven differential circuit. When the differential circuit 101 is a current-driven differential circuit, the bias parameter is a bias current; when the differential circuit 101 is a voltage-driven differential circuit, the bias parameter is a bias voltage. The processor 05 can generate a digital code based on the magnitude of the gain to be output by the variable gain amplifier 10 and provide it to the digital-to-analog converter 104 . After receiving the digital code from the processor 05 , the digital-to-analog converter 104 converts the digital code into an analog quantity based on the corresponding relationship between the digital code and the offset parameter, and provides the digital code to the differential circuit 101 . It should be noted that the embodiment of the present application does not limit the number of digits of the digital code input to the digital-to-analog converter 104. When more fine adjustment of the bias parameter is required, the digital code can be set to more digits. The control circuit 103 controls the switch K1 or the switch K2 to be turned on or off based on the digital code input from the input end Di of the digital-to-analog converter 104, so that at least one capacitor C1 is coupled to the signal input end In1 of the differential circuit 101 and the common ground Gnd between, or disconnect the connection between the at least one capacitor C1 and the common ground Gnd; and, make the at least one capacitor C2 coupled between the signal input terminal In2 of the differential circuit 101 and the common ground Gnd, or disconnect the The connection between at least one capacitor C2 and the common ground Gnd.
基于图8所示的可变增益放大器10,在一种可能的实现方式中,控制电路103还可以为如图9所示的结构。具体的,可变增益放大器10还包括同或门N1、同或门N2、反相器F1和反相器F2。其中,反相器F1的输出端耦合至同或门N1的第二输入端,反相器F2的输出端耦合至同或门N2的第二输入端。同或门N1的输出端为控制电路103的输出端Co1,同或门N2的输出端为控制电路103的输出端Co2。假设数模转换器104的输入端Di输入10比特的数字码。控制电路103可以获取数字码的高三位数字码(也即第十位、第九位和第八位),然后将第十位数字码输入至同或门N1的第一输入端和同或门N2的第一输入端,将第九位数字码输入至反相器F1的输入端,将第八位数字码输入至反相器F2的输入端。反相器F1对第九位数字码反相后提供至同或门N1的第二输入端;同或门N1对第十位数字码和反相后的第九位数字码进行同或运算后控制其中一个开关K1以及其中一个开关K2导通或关断;反相器F2对第八位数字码反相后提供至同或门N2的第二输入端;同或门N2对第十位数字码和反相后的第八位数字码进行同或运算后控制另外一个开关K1以及另外一个开关K2导通或关断。Based on the variable gain amplifier 10 shown in FIG. 8 , in a possible implementation manner, the control circuit 103 may also have the structure shown in FIG. 9 . Specifically, the variable gain amplifier 10 further includes an XOR gate N1, an XOR gate N2, an inverter F1 and an inverter F2. Wherein, the output terminal of the inverter F1 is coupled to the second input terminal of the same-OR gate N1, and the output terminal of the inverter F2 is coupled to the second input terminal of the same-OR gate N2. The output terminal of the XOR gate N1 is the output terminal Co1 of the control circuit 103 , and the output terminal of the XOR gate N2 is the output terminal Co2 of the control circuit 103 . Assume that a 10-bit digital code is input to the input terminal Di of the digital-to-analog converter 104 . The control circuit 103 can obtain the upper three digits of the digital code (that is, the tenth, ninth, and eighth digits), and then input the tenth digit into the first input terminal of the XOR gate N1 and the XOR gate. The first input terminal of N2 inputs the ninth digital code to the input terminal of the inverter F1, and inputs the eighth digital code to the input terminal of the inverter F2. Inverter F1 inverts the ninth digital code and provides it to the second input terminal of the OR gate N1; the exclusive OR gate N1 performs the same OR operation on the tenth digital code and the inverted ninth digital code. Control one of the switches K1 and one of the switches K2 to turn on or off; the inverter F2 inverts the eighth digital code and provides it to the second input of the OR gate N2; the same OR gate N2 pairs the tenth digit The code and the inverted eighth-digit digital code perform the same-OR operation to control the other switch K1 and the other switch K2 to be turned on or off.
本申请实施例中所述的差分电路101可以为吉尔伯特结构的电路。差分电路101的结构如图10所示。差分电路101可以包括第一差分电路和第二差分电路。其中第一差分电路包括晶体管M1和晶体管M2,第二差分电路包括晶体管M3和晶体管M4。各晶体管既可以为PMOS型晶体管,也可以为NMOS型晶体管。下面以各晶体管为NMOS型晶体管为例进行描述。晶体管M1的源极和晶体管M2的源极耦合在一起,晶体管M3的源极和晶体管M4的源极耦合在一起,晶体管M1的漏极和晶体管M3的漏极均耦合在一起作为差分电路101的信号输出端Io1,晶体管M2的漏极和晶体管M4的漏极均耦合在一起作为差分电路101的信号输出端Io2。需要说明的是,差分电路101的信号输出端Io1和信号输出端Io2即为可变增益放大器10的输出端。The differential circuit 101 described in the embodiments of the present application may be a circuit with a Gilbert structure. The structure of the differential circuit 101 is shown in FIG. 10 . The differential circuit 101 may include a first differential circuit and a second differential circuit. The first differential circuit includes a transistor M1 and a transistor M2, and the second differential circuit includes a transistor M3 and a transistor M4. Each transistor may be a PMOS type transistor or an NMOS type transistor. The following description will be given by taking as an example that each transistor is an NMOS transistor. The source of the transistor M1 is coupled with the source of the transistor M2, the source of the transistor M3 is coupled with the source of the transistor M4, the drain of the transistor M1 and the drain of the transistor M3 are coupled together as the differential circuit 101. The signal output terminal Io1 , the drain of the transistor M2 and the drain of the transistor M4 are all coupled together as the signal output terminal Io2 of the differential circuit 101 . It should be noted that the signal output terminal Io1 and the signal output terminal Io2 of the differential circuit 101 are the output terminals of the variable gain amplifier 10 .
基于如上所述的差分电路101的结构,在一种可能的实现方式中,差分电路101为电流驱动型电路,此时差分电路101中各晶体管的栅极所输入的信号如图10所示。在第二种可能的实现方式中,差分电路101为电压驱动型电路,此时差分电路101中各晶体管的栅极所输入的信号如图13所示。其中电压驱动型差分电路的具体描述参考图13的相关描 述。在图10中,晶体管M1和晶体管M4的栅极均耦合至差分电路101的信号输入端In1;晶体管M2和晶体管M3的栅极均耦合至差分电路101的信号输入端In2。此外,当差分电路101为电流驱动型差分电路时,可变增益放大器还包括电流源,该电流源用于向差分电路101提供偏置电流。具体的,该电流源可以包括用于向第一差分电路提供偏置电流的第一电流源和向第二差分电路提供偏置电流的第二电流源。基于图10所示的差分电路,该第一电流源可以包括晶体管M5,该第二电流源可以包括晶体管M6。其中,晶体管M5的漏极耦合至差分电路101的偏置电流输入端Ic1,晶体管M6的漏极耦合至差分电路101的偏置电流输入端Ic2,晶体管M5的源极和晶体管M6的源极均耦合至公共地Gnd。此外,在图10中,可变增益放大器10还包括电流镜电路105。该电流镜电路包括用于向晶体管M5提供第一镜像电流的第一电流镜和用于向晶体管M6提供第二镜像电流的第二电流镜。第一电流镜包括晶体管M7,第二电流镜包括晶体管M8。晶体管M7和晶体管M8可以为Nmos型晶体管,也可以为Pmos型晶体管。图10中示意性的示出了晶体管M7和晶体管M8为Nmos型晶体管的情况。晶体管M5的栅极耦合至晶体管M7的栅极,晶体管M6的栅极耦合至晶体管M8的栅极。晶体管M7的栅极和漏极耦合在一起,均耦合至数模转换器104的输入端Do1,晶体管M5的栅极耦合至晶体管M7的栅极;晶体管M8的栅极和漏极耦合在一起,均耦合至数模转换器104的输入端Do2,晶体管M6的栅极耦合至晶体管M8的栅极;晶体管M7的源极和晶体管M8的源极均耦合至公共地Gnd。Based on the structure of the differential circuit 101 as described above, in a possible implementation manner, the differential circuit 101 is a current-driven circuit, and the signals input to the gates of the transistors in the differential circuit 101 are shown in FIG. 10 . In a second possible implementation manner, the differential circuit 101 is a voltage-driven circuit, and at this time, the signals input to the gates of the transistors in the differential circuit 101 are shown in FIG. 13 . The specific description of the voltage-driven differential circuit refers to the related description of FIG. 13 . In FIG. 10 , the gates of the transistors M1 and M4 are both coupled to the signal input terminal In1 of the differential circuit 101 ; the gates of the transistors M2 and M3 are both coupled to the signal input terminal In2 of the differential circuit 101 . In addition, when the differential circuit 101 is a current-driven differential circuit, the variable gain amplifier further includes a current source for supplying a bias current to the differential circuit 101 . Specifically, the current source may include a first current source for providing bias current to the first differential circuit and a second current source for providing bias current to the second differential circuit. Based on the differential circuit shown in FIG. 10 , the first current source may include a transistor M5 , and the second current source may include a transistor M6 . The drain of the transistor M5 is coupled to the bias current input terminal Ic1 of the differential circuit 101, the drain of the transistor M6 is coupled to the bias current input terminal Ic2 of the differential circuit 101, the source of the transistor M5 and the source of the transistor M6 are both Coupled to common ground Gnd. In addition, in FIG. 10 , the variable gain amplifier 10 further includes a current mirror circuit 105 . The current mirror circuit includes a first current mirror for providing a first mirror current to transistor M5 and a second current mirror for providing a second mirror current to transistor M6. The first current mirror includes transistor M7 and the second current mirror includes transistor M8. The transistor M7 and the transistor M8 may be Nmos type transistors or Pmos type transistors. FIG. 10 schematically shows the case where the transistor M7 and the transistor M8 are Nmos type transistors. The gate of transistor M5 is coupled to the gate of transistor M7 and the gate of transistor M6 is coupled to the gate of transistor M8. The gate and drain of the transistor M7 are coupled together, both are coupled to the input Do1 of the digital-to-analog converter 104, the gate of the transistor M5 is coupled to the gate of the transistor M7; the gate and drain of the transistor M8 are coupled together, Both are coupled to the input Do2 of the digital-to-analog converter 104, the gate of the transistor M6 is coupled to the gate of the transistor M8; the source of the transistor M7 and the source of the transistor M8 are both coupled to the common ground Gnd.
基于图10所示的电流驱动型差分电路101,此时,如图8所示的电容C1的第一极耦合至晶体管M1的栅极和晶体管M4的栅极;如图8所示的电容C2的第一极耦合至晶体管M2的栅极和晶体管M3的栅极。数模转换器104的输入端Di接收到数字码后,基于数字码-偏置电流之间的对应关系,将数字码转换成控制信号A1和控制信号A2,将控制信号A1提供至晶体管M7的栅极以控制晶体管M7输出的镜像电流,将控制信号A2提供至晶体管M8的栅极以控制晶体管M8输出的镜像电流。控制电路103基于数模转换器104的输入端Di输入的数字码,控制开关K1和开关K2的导通或关断。具体来说,数模转换器104基于输入端Di输入的数字码,确定出偏置电流I1和偏置电流I2之间的差值。当偏置电流I1和偏置电流I2之间的差值较高时,增加接入可变增益放大器10中的电容C1和电容C2的数目;当偏置电流I1和偏置电流I2之间的差值较低时,减少接入可变增益放大器10中的电容C1和电容C2的数目。例如,当置电流I1和偏置电流I2之间的差值在0附近时,则控制开关K1和开关K2均关断;当置电流I1和偏置电流I2之间的差值距离0较远时,控制开关K1和开关K2均导通。Based on the current-driven differential circuit 101 shown in FIG. 10 , at this time, the first pole of the capacitor C1 shown in FIG. 8 is coupled to the gate of the transistor M1 and the gate of the transistor M4; the capacitor C2 shown in FIG. 8 is coupled to the gate of the transistor M1 The first pole of is coupled to the gate of transistor M2 and the gate of transistor M3. After the input terminal Di of the digital-to-analog converter 104 receives the digital code, it converts the digital code into a control signal A1 and a control signal A2 based on the corresponding relationship between the digital code and the bias current, and provides the control signal A1 to the transistor M7. The gate is used to control the mirror current output by the transistor M7, and the control signal A2 is provided to the gate of the transistor M8 to control the mirror current output by the transistor M8. The control circuit 103 controls the on or off of the switch K1 and the switch K2 based on the digital code input from the input terminal Di of the digital-to-analog converter 104 . Specifically, the digital-to-analog converter 104 determines the difference between the bias current I1 and the bias current I2 based on the digital code input from the input terminal Di. When the difference between the bias current I1 and the bias current I2 is high, increase the number of capacitors C1 and C2 connected to the variable gain amplifier 10; when the difference between the bias current I1 and the bias current I2 When the difference is low, the number of capacitors C1 and C2 connected to the variable gain amplifier 10 is reduced. For example, when the difference between the setting current I1 and the bias current I2 is near 0, the control switch K1 and the switch K2 are both turned off; when the difference between the setting current I1 and the bias current I2 is far from 0 When the control switch K1 and the switch K2 are both turned on.
基于图10所示的差分电路101,通常,可变增益放大器10的增益大小,是通过调节输入至差分电路101中的偏置参数来调节的。而在图10所示的差分电路101中,各晶体管的栅极和源极之间存在寄生电容Cgs。在通过改变偏置电流来改变可变增益放大器10的增益大小时,晶体管M1-晶体管M4中的寄生电容Cgs发生变化。Based on the differential circuit 101 shown in FIG. 10 , generally, the gain of the variable gain amplifier 10 is adjusted by adjusting the bias parameter input to the differential circuit 101 . On the other hand, in the differential circuit 101 shown in FIG. 10 , a parasitic capacitance Cgs exists between the gate and the source of each transistor. When the gain of the variable gain amplifier 10 is changed by changing the bias current, the parasitic capacitance Cgs in the transistor M1 - the transistor M4 changes.
C gs=k c*V gs             公式(1) C gs = k c *V gs formula (1)
由于
Figure PCTCN2021081564-appb-000001
because
Figure PCTCN2021081564-appb-000001
Figure PCTCN2021081564-appb-000002
Therefore
Figure PCTCN2021081564-appb-000002
其中,k c是电容随电压变化的系数,近似为一个常数,V TH是晶体管的阈值电压,K是一个常数,Vgs是晶体管的栅极和源极之间的电压,g m为晶体管的跨导,其为固定值,I 为晶体管流过的电流。 where k c is the coefficient of capacitance variation with voltage, approximately a constant, V TH is the threshold voltage of the transistor, K is a constant, Vgs is the voltage between the gate and source of the transistor, and g m is the voltage across the transistor Conduction, which is a fixed value, and I is the current flowing through the transistor.
由于可变增益放大器101的信号输入端In1和信号输入端In2输入极性相反的一对差分信号,因此总电容:Since the signal input terminal In1 and the signal input terminal In2 of the variable gain amplifier 101 input a pair of differential signals with opposite polarities, the total capacitance is:
Figure PCTCN2021081564-appb-000003
Figure PCTCN2021081564-appb-000003
Figure PCTCN2021081564-appb-000004
Figure PCTCN2021081564-appb-000004
Figure PCTCN2021081564-appb-000005
Figure PCTCN2021081564-appb-000005
Figure PCTCN2021081564-appb-000006
Figure PCTCN2021081564-appb-000006
上式中,C gs是总的寄生电容,C gs1和C gs2分别是晶体管M1和晶体管M2的寄生电容,I1是流过晶体管M1的电流,I2是流过晶体管M2的电流,记I e为差值电流。 In the above formula, C gs is the total parasitic capacitance, C gs1 and C gs2 are the parasitic capacitances of the transistor M1 and the transistor M2 respectively, I1 is the current flowing through the transistor M1, I2 is the current flowing through the transistor M2, and I e is differential current.
由公式(5)可以看出,在I e为0时,寄生电容C gs最大,随着I e的绝对值变大,寄生电容C gs逐渐变小。由公式也可以看出,寄生电容C gs 2与I e 2为近似线性关系。其中,寄生电容C gs与差值电流I e之间的关系如图11所示。 It can be seen from formula (5) that when I e is 0, the parasitic capacitance C gs is the largest, and as the absolute value of I e increases, the parasitic capacitance C gs gradually decreases. It can also be seen from the formula that the parasitic capacitance C gs 2 and I e 2 have an approximate linear relationship. The relationship between the parasitic capacitance C gs and the difference current I e is shown in FIG. 11 .
传统可变增益放大器中,其仅包括差分电路101。通常,在恒定小信号下,寄生电容C gs是影响可变增益放大器的输入阻抗的主要因素之一,输入阻抗的改变通常导致输出信号的相位的改变。由于可变增益放大器是通过调节差值电流Ie的大小来调节增益大小的,因此,可变增益放大器增益的改变导致寄生电容C gs的改变,该寄生电容C gs的改变导致输入阻抗波动,从而导致可变增益放大器输出信号的相位随着可变增益放大器的变化而波动,进而导致可变增益放大器输出的信号的相位与期望相位之间具有偏差,降低了可变增益放大器的性能。此外,当采用传统的可变增益放大器形成如图7所示的移相器01时,由于可变增益放大器012的增益与可变增益放大器013的增益不同,导致可变增益放大器012的输入阻抗的波动大小与可变增益放大器013的输入阻抗的波动大小不同,从而导致可变增益放大器012输出信号的实际相位与期望相位具有第一偏差,同样,可变增益放大器013输出信号的实际相位与期望相位具有第二偏差,该第一偏差和第二偏差大小不同,进而导致可变增益放大器012输出信号与可变增益放大器013输出信号的正交性发生变化,例如大于90度或者小于90度,从而使得移相器01输出的信号Out的实际相位与期望输出的相位之间存在一定误差,降低了移相器输出的信号的准确性。 In the conventional variable gain amplifier, it only includes the differential circuit 101 . Generally, under constant small signal, the parasitic capacitance C gs is one of the main factors affecting the input impedance of the variable gain amplifier, and the change of the input impedance usually leads to the change of the phase of the output signal. Since the gain of the variable gain amplifier is adjusted by adjusting the difference current Ie, the change of the gain of the variable gain amplifier leads to the change of the parasitic capacitance C gs , and the change of the parasitic capacitance C gs causes the input impedance to fluctuate, thus As a result, the phase of the output signal of the variable gain amplifier fluctuates with the change of the variable gain amplifier, thereby causing the phase of the signal output by the variable gain amplifier to have a deviation from the expected phase, which reduces the performance of the variable gain amplifier. In addition, when a conventional variable gain amplifier is used to form the phase shifter 01 as shown in FIG. 7, since the gain of the variable gain amplifier 012 is different from that of the variable gain amplifier 013, the input impedance of the variable gain amplifier 012 is caused The magnitude of the fluctuation is different from that of the input impedance of the variable gain amplifier 013, so that the actual phase of the output signal of the variable gain amplifier 012 has a first deviation from the expected phase. Similarly, the actual phase of the output signal of the variable gain amplifier 013 is different from the expected phase. It is expected that the phase has a second deviation, and the first deviation and the second deviation are different in magnitude, thereby causing the orthogonality of the output signal of the variable gain amplifier 012 and the output signal of the variable gain amplifier 013 to change, for example, greater than 90 degrees or less than 90 degrees , so that there is a certain error between the actual phase of the signal Out output by the phase shifter 01 and the expected output phase, which reduces the accuracy of the signal output by the phase shifter.
本申请实施例通过设置电容电路102和控制电路103,可以对寄生电容C gs进行电容补偿,使得可变增益放大器01的增益改变时,晶体管M1、晶体管M2、晶体管M3和晶体管M4中栅极与源极之间的电容稳定在一定的范围内,有效抑制寄生电容C gs随差值电流I e的变化而变化,从而提高可变增益放大器输入阻抗的稳定性,进而提高可变增益放大器的性能。此外,当移相器01为如图5所示的结构时,如图5所示的可变增益放大器012和可变增益放大器013通过采用本申请实施例所述的可变增益放大器10,可以保证信号I和信号Q之间的正交性,从而提高移相器输出的信号的准确性。 By setting the capacitance circuit 102 and the control circuit 103 in this embodiment of the present application, capacitance compensation can be performed on the parasitic capacitance C gs , so that when the gain of the variable gain amplifier 01 is changed, the gates of the transistor M1, the transistor M2, the transistor M3, and the transistor M4 are the same as those of the transistor M4. The capacitance between the sources is stabilized within a certain range, effectively suppressing the parasitic capacitance C gs from changing with the difference current I e , thereby improving the stability of the input impedance of the variable gain amplifier, thereby improving the performance of the variable gain amplifier . In addition, when the phase shifter 01 has the structure shown in FIG. 5 , the variable gain amplifier 012 and the variable gain amplifier 013 shown in FIG. The orthogonality between the signal I and the signal Q is guaranteed, thereby improving the accuracy of the signal output by the phase shifter.
当移相器01为图5所示的结构、且可变增益放大器012和可变增益放大器013的结构为如图8所示的可变增益放大器10时,移相器01的结构如图12a所示。在图12a中,移相器01包括可变增益放大器012和可变增益放大器013。其中,可变增益放大器012包括处理器051、数模转换器1041、差分电路1011、控制电路1031和电容电路1021,数模转换器1041包括输入端Di1、输出端Do11和输出端Do12,差分电路1011包括信号输入 端In1、信号输入端In2、信号输出端Io1、信号输出端Io2、偏置参数输入端Ic11和偏置参数输入端Ic12,控制电路1031包括输入端Ci1、输出端Co11和输出端Co12。电容电路1021包括多个电容C11、多个电容C12、多个开关K11和多个开关K12。其中,可变增益放大器012的结构、各部件之间的连接关系以及工作原理与图8所示的可变增益放大器10的结构、各部件之间的连接关系以及工作原理相同,具体参考图8所示的可变增益放大器10的相关描述,在此不再赘述。同样,可变增益放大器013包括处理器052、数模转换器1042、差分电路1012、控制电路1032和电容电路1022,数模转换器1042包括输入端Di2、输出端Do21和输出端Do22,差分电路1012包括信号输入端Qn1、信号输入端Qn2、信号输出端Qo1、信号输出端Qo2、偏置参数输入端Ic21和偏置参数输入端Ic22,控制电路1032包括输入端Ci2、输出端Co21和输出端Co22。其中,可变增益放大器013的结构、各部件之间的连接关系以及工作原理与图8所示的可变增益放大器10的结构、各部件之间的连接关系以及工作原理相同,具体参考图8所示的可变增益放大器10的相关描述,在此不再赘述。When the structure of the phase shifter 01 is shown in FIG. 5, and the structures of the variable gain amplifier 012 and the variable gain amplifier 013 are the variable gain amplifier 10 shown in FIG. 8, the structure of the phase shifter 01 is shown in FIG. 12a shown. In Figure 12a, the phase shifter 01 includes a variable gain amplifier 012 and a variable gain amplifier 013. The variable gain amplifier 012 includes a processor 051, a digital-to-analog converter 1041, a differential circuit 1011, a control circuit 1031 and a capacitor circuit 1021, and the digital-to-analog converter 1041 includes an input end Di1, an output end Do11 and an output end Do12, and the differential circuit 1011 includes a signal input end In1, a signal input end In2, a signal output end Io1, a signal output end Io2, a bias parameter input end Ic11 and a bias parameter input end Ic12, and the control circuit 1031 includes an input end Ci1, an output end Co11 and an output end Co12. The capacitor circuit 1021 includes a plurality of capacitors C11, a plurality of capacitors C12, a plurality of switches K11 and a plurality of switches K12. The structure of the variable gain amplifier 012, the connection relationship between the components, and the working principle are the same as the structure, the connection relationship between the components, and the working principle of the variable gain amplifier 10 shown in FIG. The related description of the variable gain amplifier 10 shown will not be repeated here. Similarly, the variable gain amplifier 013 includes a processor 052, a digital-to-analog converter 1042, a differential circuit 1012, a control circuit 1032 and a capacitor circuit 1022. The digital-to-analog converter 1042 includes an input end Di2, an output end Do21 and an output end Do22, and the differential circuit 1012 includes a signal input end Qn1, a signal input end Qn2, a signal output end Qo1, a signal output end Qo2, a bias parameter input end Ic21 and a bias parameter input end Ic22, and the control circuit 1032 includes an input end Ci2, an output end Co21 and an output end Co22. The structure of the variable gain amplifier 013, the connection relationship between the components, and the working principle are the same as the structure, the connection relationship between the components, and the working principle of the variable gain amplifier 10 shown in FIG. The related description of the variable gain amplifier 10 shown will not be repeated here.
需要说明的是,如图12a所示的移相器01中,差分电路1011的输入端In1和输入端In2即为如图7所示的可变增益放大器012的输入端,该输入端In1和输入端In2耦合至IQ发生器011的输出端Go1和输出端Go2,用于输入信号Ia1和信号Ia2;差分电路1012的输入端Qn1和输入端Qn2即为如图7所示的可变增益放大器013的输入端,该输入端Qn1和输入端Qn2耦合至IQ发生器011的输出端Go3和输出端Go4,用于输入信号Qa1和信号Qa2。差分电路1011的输出端Io1和输出端Io2分别耦合至处理器014的输入端Si1和Si2,该输出端Io1和输出端Io2用于输出信号Ib1和信号Ib2;差分电路1012的输出端Qo1和输出端Qo2分别耦合至处理器014的输入端Si3和Si4,该输出端Qo1和输出端Qo2用于输出信号Qb1和信号Qb2。It should be noted that, in the phase shifter 01 shown in FIG. 12a, the input terminal In1 and the input terminal In2 of the differential circuit 1011 are the input terminals of the variable gain amplifier 012 shown in FIG. The input terminal In2 is coupled to the output terminal Go1 and the output terminal Go2 of the IQ generator 011 for inputting the signal Ia1 and the signal Ia2; the input terminal Qn1 and the input terminal Qn2 of the differential circuit 1012 are the variable gain amplifier shown in FIG. 7 . The input terminal of 013, the input terminal Qn1 and the input terminal Qn2 are coupled to the output terminal Go3 and the output terminal Go4 of the IQ generator 011 for inputting the signal Qa1 and the signal Qa2. The output terminal Io1 and the output terminal Io2 of the differential circuit 1011 are respectively coupled to the input terminals Si1 and Si2 of the processor 014, and the output terminal Io1 and the output terminal Io2 are used to output the signal Ib1 and the signal Ib2; the output terminal Qo1 and the output terminal of the differential circuit 1012 The terminal Qo2 is coupled to the input terminals Si3 and Si4 of the processor 014, respectively, and the output terminal Qo1 and the output terminal Qo2 are used to output the signal Qb1 and the signal Qb2.
基于图5和图12a所示的移相器01的结构,更具体的,当可变增益放大器012和可变增益放大器013的结构为如图10所示的可变增益放大器10的结构时,也即差分电路1011和差分电路1012为电流驱动型差分电路时,移相器01的结构如图12b所示。在图12b中,数模转换器1041、数模转换器1042、控制电路1031、控制电路1032的各端口具体参考图12a中的相关描述,电容电路1021和电容电路1022的结构具体参考图12a中的相关描述,在此不再赘述。在图12b中,差分电路1011具体包括晶体管M11、晶体管M21、晶体管M31、晶体管M41;此外,可变增益放大器012还包括电源电路和电流镜电路1051,电流源电路包括晶体管M51和晶体管M61,电流镜电路1051包括晶体管M71和晶体管M81。各晶体管与其他部件的连接关系可变增益放大器012的工作原理具体参考图10所示的可变增益放大器10的结构以及工作原理的相关描述,在此不再赘述。在图12b中,差分电路1012具体包括晶体管M12、晶体管M22、晶体管M32和晶体管M42;此外,可变增益放大器012还包括电源电路和电流镜电路1052,电源电路包括晶体管M52和晶体管M62,电流镜电路1052包括晶体管M72和晶体管M82。各晶体管与其他部件的连接关系可变增益放大器012的工作原理具体参考图10所示的可变增益放大器10的结构以及工作原理的相关描述,在此不再赘述。Based on the structures of the phase shifter 01 shown in FIG. 5 and FIG. 12a, more specifically, when the structures of the variable gain amplifier 012 and the variable gain amplifier 013 are the structures of the variable gain amplifier 10 shown in FIG. 10, That is, when the differential circuit 1011 and the differential circuit 1012 are current-driven differential circuits, the structure of the phase shifter 01 is shown in FIG. 12b. In FIG. 12b , the ports of the digital-to-analog converter 1041, the digital-to-analog converter 1042, the control circuit 1031, and the control circuit 1032 refer to the relevant descriptions in FIG. 12a, and the structures of the capacitor circuit 1021 and the capacitor circuit 1022 refer to FIG. 12a. The related descriptions are not repeated here. In FIG. 12b, the differential circuit 1011 specifically includes a transistor M11, a transistor M21, a transistor M31, and a transistor M41; in addition, the variable gain amplifier 012 also includes a power supply circuit and a current mirror circuit 1051, and the current source circuit includes a transistor M51 and a transistor M61. The mirror circuit 1051 includes a transistor M71 and a transistor M81. The connection relationship between each transistor and other components The working principle of the variable gain amplifier 012 is specifically referred to the structure of the variable gain amplifier 10 shown in FIG. 10 and the related description of the working principle, which will not be repeated here. In Fig. 12b, the differential circuit 1012 specifically includes a transistor M12, a transistor M22, a transistor M32 and a transistor M42; in addition, the variable gain amplifier 012 also includes a power supply circuit and a current mirror circuit 1052, the power supply circuit includes a transistor M52 and a transistor M62, and the current mirror Circuit 1052 includes transistor M72 and transistor M82. The connection relationship between each transistor and other components The working principle of the variable gain amplifier 012 is specifically referred to the structure of the variable gain amplifier 10 shown in FIG. 10 and the related description of the working principle, which will not be repeated here.
图10示出了差分电路101为电流驱动型差分电路。在本申请实施例中,差分电路101还可以为电压驱动型差分电路。请继续参考图13,其示出了可变增益放大器10的又一个 结构示意图。在图13中,可变增益放大器10包括差分电路101、电容电路102、控制电路103和数模转换器104。其中,图13中所示的差分电路101中,除了包括晶体管M1、晶体管M2、晶体管M3和晶体管M4之外,还包括晶体管M5和晶体管M6,其中各晶体管之间的连接关系与图10所示的可变增益放大器10中的各晶体管之间的连接关系相同,具体参考图10所示的可变增益放大器10中的相关描述,在此不再赘述。电容电路102的结构与图8中的电容电路102的结构相同,具体参考图8所示的实施例中关于电容电路102的相关描述,在此不再赘述。图13中所示的控制电路103的结构与图8或图9中所述的控制电路103的结构以及工作原理相同,具体参考图8或图9中所示的控制电路103的相关描述,在此不再赘述。FIG. 10 shows that the differential circuit 101 is a current-driven differential circuit. In this embodiment of the present application, the differential circuit 101 may also be a voltage-driven differential circuit. Please continue to refer to FIG. 13 , which shows yet another schematic structural diagram of the variable gain amplifier 10 . In FIG. 13 , the variable gain amplifier 10 includes a differential circuit 101 , a capacitance circuit 102 , a control circuit 103 , and a digital-to-analog converter 104 . The differential circuit 101 shown in FIG. 13 includes transistor M5 and transistor M6 in addition to transistor M1 , transistor M2 , transistor M3 and transistor M4 . The connection relationship between the transistors is the same as that shown in FIG. 10 . The connection relationship between the transistors in the variable gain amplifier 10 is the same. For details, please refer to the relevant description in the variable gain amplifier 10 shown in FIG. 10 , which will not be repeated here. The structure of the capacitor circuit 102 is the same as the structure of the capacitor circuit 102 in FIG. 8 . For details, please refer to the relevant description of the capacitor circuit 102 in the embodiment shown in FIG. 8 , which will not be repeated here. The structure of the control circuit 103 shown in FIG. 13 is the same as the structure and working principle of the control circuit 103 shown in FIG. 8 or FIG. This will not be repeated here.
本申请实施例中,与图10所示的差分电路101不同的是,图13所示的差分电路101中,晶体管M5的栅极耦合至差分电路101的信号输入端In1,晶体管M6的栅极耦合至差分电路101的信号输入端In2,晶体管M1的栅极和晶体管M4的栅极耦合至差分电路101的偏置参数输入端Ic1,晶体管M2的栅极和晶体管M3的栅极耦合至差分电路101的偏置参数输入端Ic2。基于此,数模转换器104的输出端Do1耦合至晶体管M1的栅极和晶体管M4的栅极;数模转换器104的输出端Do2耦合至晶体管M2的栅极和晶体管M3的栅极。电容C1的第一极耦合至晶体管M5的栅极;电容C2的第一极耦合至晶体管M6的栅极。数模转换器104的输入端Di接收到数字码后,基于数字码-偏置电压之间的对应关系,将数字码转换成偏置电压Vc和偏置电压Vd,将偏置电压Vc提供至晶体管M1的栅极和晶体管M4的栅极,将偏置电压Vd提供至晶体管M2和晶体管M3的栅极。控制电路103基于数模转换器104的输入端Di输入的数字码,控制开关K1和开关K2的导通或关断。In this embodiment of the present application, the difference from the differential circuit 101 shown in FIG. 10 is that in the differential circuit 101 shown in FIG. 13 , the gate of the transistor M5 is coupled to the signal input terminal In1 of the differential circuit 101 , and the gate of the transistor M6 is coupled to the signal input terminal In1 of the differential circuit 101 . coupled to the signal input terminal In2 of the differential circuit 101, the gate of the transistor M1 and the gate of the transistor M4 are coupled to the bias parameter input terminal Ic1 of the differential circuit 101, the gate of the transistor M2 and the gate of the transistor M3 are coupled to the differential circuit The bias parameter input terminal Ic2 of 101. Based on this, the output terminal Do1 of the digital-to-analog converter 104 is coupled to the gate of the transistor M1 and the gate of the transistor M4; the output terminal Do2 of the digital-to-analog converter 104 is coupled to the gate of the transistor M2 and the gate of the transistor M3. The first electrode of capacitor C1 is coupled to the gate of transistor M5; the first electrode of capacitor C2 is coupled to the gate of transistor M6. After the input terminal Di of the digital-to-analog converter 104 receives the digital code, it converts the digital code into a bias voltage Vc and a bias voltage Vd based on the corresponding relationship between the digital code and the bias voltage, and provides the bias voltage Vc to the bias voltage Vc. The gate of the transistor M1 and the gate of the transistor M4 provide the bias voltage Vd to the gates of the transistor M2 and the transistor M3. The control circuit 103 controls the on or off of the switch K1 and the switch K2 based on the digital code input from the input terminal Di of the digital-to-analog converter 104 .
基于图5和图12a所示的移相器01的结构,更具体的,当可变增益放大器012和可变增益放大器013的结构为如图13所示的可变增益放大器10的结构时,也即差分电路1011和差分电路1012为电压驱动型差分电路时,移相器01的结构如图14所示。在图14中,差分电路1011、差分电路1012、数模转换器1041、数模转换器1042、控制电路1031、控制电路1032的各端口具体参考图12a中的相关描述,电容电路1021和电容电路1022的结构具体参考图12a中的相关描述,差分电路1011、差分电路1012的结构具体参看图12b中的相关描述,在此不再赘述。Based on the structures of the phase shifter 01 shown in FIG. 5 and FIG. 12a, more specifically, when the structures of the variable gain amplifier 012 and the variable gain amplifier 013 are the structures of the variable gain amplifier 10 shown in FIG. 13, That is, when the differential circuit 1011 and the differential circuit 1012 are voltage-driven differential circuits, the structure of the phase shifter 01 is shown in FIG. 14 . In FIG. 14 , the ports of the differential circuit 1011 , the differential circuit 1012 , the digital-to-analog converter 1041 , the digital-to-analog converter 1042 , the control circuit 1031 , and the control circuit 1032 refer to the relevant descriptions in FIG. 12 a for details. The capacitive circuit 1021 and the capacitive circuit For the structure of 1022, please refer to the related description in FIG. 12a, and for the structure of the differential circuit 1011 and the differential circuit 1012, refer to the related description in FIG. 12b, which will not be repeated here.
图8、图10和图13所示的实施例介绍了差分电路中,对用于进行信号输入的晶体管的(例如图8所示的晶体管M1-晶体管M4、图9所示的晶体管M5和晶体管M6)栅极与源极之间的寄生电容Cgs进行电容补偿、以稳定输入阻抗的情况。需要说明的是,如图8、图10和图13所示的差分电路101中,用于输出差分信号的晶体管M1-晶体管M4中的漏极和源极之间同样存在寄生电容Cds,寄生电容Cds是影响输出阻抗的因素之一。其中,由于寄生电容的变化由源极电压变化引起,因此,寄生电容Cds的变化与寄生电容Cgs的变化一致。基于此,本申请实施例中还可以对寄生电容Cds进行电容补偿,以稳定输出阻抗。请继续参考图15,其示出了本申请实施例提供的可变增益放大器的又一个结构示意图。The embodiments shown in FIG. 8, FIG. 10 and FIG. 13 introduce the differential circuit for the transistors used for signal input (for example, transistor M1-transistor M4 shown in FIG. 8, transistor M5 and transistor shown in FIG. 9). M6) The case where the parasitic capacitance Cgs between the gate and the source performs capacitance compensation to stabilize the input impedance. It should be noted that, in the differential circuit 101 shown in FIG. 8 , FIG. 10 and FIG. 13 , there is also a parasitic capacitance Cds between the drain and the source of the transistor M1 - transistor M4 for outputting differential signals, and the parasitic capacitance Cds is one of the factors that affects the output impedance. Among them, since the change of the parasitic capacitance is caused by the change of the source voltage, the change of the parasitic capacitance Cds is consistent with the change of the parasitic capacitance Cgs. Based on this, in the embodiment of the present application, capacitance compensation may also be performed on the parasitic capacitance Cds to stabilize the output impedance. Please continue to refer to FIG. 15 , which shows another schematic structural diagram of the variable gain amplifier provided by the embodiment of the present application.
如图15所示的可变增益放大器10包括差分电路101、电容电路102、控制电路103和数模转换器104。其中,图15所示的差分电路101所包括的器件以及各器件之间的连 接关系与图10所示的差分电路101相同,具体参考图10所示的差分电路101的相关描述,在此不再赘述。如图15所示的数模转换器104的结构与图8中所述的数模转换器104的结构相同,在此不再赘述。与上述各实施例中所述的可变增益放大器10的结构不同的是,在图15中,电容电路103除了包括电容C1、电容C2、开关K1和开关K2之外,还包括多个电容C3、多个电容C4、多个开关K3和多个开关K4,以对寄生电容Cds进行补偿。其中,图15示意性的出了2个电容C3、2个电容C4、2个开关K3和2个开关K4的情况。具体的,电容C3的第一极耦合至差分电路101的信号输出端Io1,电容C3的第二极耦合至开关K3的第一端,开关K3的第二端耦合至公共地Gnd;电容C4的第一极耦合至差分电路101的信号输出端Io2,电容C4的第二极耦合至开关K4的第一端,开关K4的第二端耦合至公共地Gnd。此外,控制电路103的输出端Co1还耦合至其中一个开关K3的控制端以及其中一个开关K4的控制端;控制电路103的输出端Co2还耦合至另外一个开关K3的控制端以及另外一个开关K4的控制端。控制电路103对开关K3和开关K4的控制原理与控制电路103对开关K1和开关K2的控制原理相同,具体参考图8和图9所示的实施例中控制电路103对开关K1和开关K2的控制原理的相关描述,在此不再赘述。The variable gain amplifier 10 shown in FIG. 15 includes a differential circuit 101 , a capacitance circuit 102 , a control circuit 103 , and a digital-to-analog converter 104 . The components included in the differential circuit 101 shown in FIG. 15 and the connection relationship between the components are the same as those of the differential circuit 101 shown in FIG. 10 . For details, please refer to the relevant description of the differential circuit 101 shown in FIG. Repeat. The structure of the digital-to-analog converter 104 shown in FIG. 15 is the same as the structure of the digital-to-analog converter 104 described in FIG. 8 , and details are not repeated here. Different from the structure of the variable gain amplifier 10 described in the above embodiments, in FIG. 15 , the capacitor circuit 103 includes a plurality of capacitors C3 in addition to the capacitor C1 , the capacitor C2 , the switch K1 and the switch K2 , a plurality of capacitors C4, a plurality of switches K3 and a plurality of switches K4 to compensate the parasitic capacitance Cds. Among them, FIG. 15 schematically shows the situation of two capacitors C3, two capacitors C4, two switches K3 and two switches K4. Specifically, the first pole of the capacitor C3 is coupled to the signal output terminal Io1 of the differential circuit 101, the second pole of the capacitor C3 is coupled to the first terminal of the switch K3, and the second terminal of the switch K3 is coupled to the common ground Gnd; The first pole is coupled to the signal output terminal Io2 of the differential circuit 101, the second pole of the capacitor C4 is coupled to the first terminal of the switch K4, and the second terminal of the switch K4 is coupled to the common ground Gnd. In addition, the output terminal Co1 of the control circuit 103 is also coupled to the control terminal of one of the switches K3 and the control terminal of one of the switches K4; the output terminal Co2 of the control circuit 103 is also coupled to the control terminal of the other switch K3 and the other switch K4 the control terminal. The control principle of the control circuit 103 for the switch K3 and the switch K4 is the same as the control principle of the control circuit 103 for the switch K1 and the switch K2. For details, please refer to the control circuit 103 in the embodiments shown in FIG. 8 and FIG. 9. The relevant description of the control principle will not be repeated here.
需要说明的是,如图15所示的可变增益放大器10中,其所包括的差分电路101既可以为电流驱动型,也可以为电压驱动型。当如图15所示的差分电路101为电流驱动型差分电路时,差分电路101、电容电路102中的电容C1和电容C2、控制电路103和数模转换器104之间的连接关系具体参考图8-图10所示的可变增益放大器10的相关描述,在此不再赘述;当如图15所示的差分电路101为电压驱动型差分电路时,差分电路101、电容电路102中的电容C1和电容C2、控制电路103和数模转换器104之间的连接关系具体参考图8和图13所示的可变增益放大器10的相关描述,在此不再赘述。It should be noted that, in the variable gain amplifier 10 shown in FIG. 15 , the differential circuit 101 included in the variable gain amplifier 10 may be either a current-driven type or a voltage-driven type. When the differential circuit 101 shown in FIG. 15 is a current-driven differential circuit, the connection relationship between the differential circuit 101 , the capacitors C1 and C2 in the capacitor circuit 102 , the control circuit 103 and the digital-to-analog converter 104 are specifically referred to in the drawing. 8-The relevant description of the variable gain amplifier 10 shown in FIG. 10 will not be repeated here; when the differential circuit 101 shown in FIG. 15 is a voltage-driven differential circuit, the capacitances in the differential circuit 101 and the capacitance circuit 102 The connection relationship between C1 and the capacitor C2, the control circuit 103 and the digital-to-analog converter 104 can be referred to the relevant description of the variable gain amplifier 10 shown in FIG. 8 and FIG. 13 , and details are not repeated here.
本申请实施例还提供了一种电子设备300,请参照图16,该电子设备该电子设备300可以包括收发器301、存储器302和处理器303,此处的收发器301内设置有图2所示的实施例中所述的相控阵。其中,收发器301中可以设置有如上各实施例中所述的矢量移相器101,以输出特定相位的信号。此外,收发器301中还可以设置有如上各实施例中所述的可变增益放大器10,以对射频信号进行增益调节。The embodiment of the present application also provides an electronic device 300. Please refer to FIG. 16. The electronic device 300 may include a transceiver 301, a memory 302, and a processor 303. Here, the transceiver 301 is provided with the device shown in FIG. 2. phased array as described in the embodiment shown. The transceiver 301 may be provided with the vector phase shifter 101 described in the above embodiments to output a signal of a specific phase. In addition, the transceiver 301 may also be provided with the variable gain amplifier 10 described in the above embodiments, so as to perform gain adjustment on the radio frequency signal.
应当理解,此处的电子设备300可以具体为智能手机、电脑、智能手表等终端设备。将终端设备以图17所示的智能手机310进行示例,其具体可以包括处理器3102、存储器3103、通信电路、天线以及输入输出装置。处理器3102主要用于对通信协议以及通信数据进行处理,以及对整个智能手机进行控制,执行软件程序,处理软件程序的数据,例如用于支持智能手机310实现各种通信功能(例如打电话、发送消息或者即时聊天等)。存储器3103主要用于存储软件程序和数据。通信电路主要用于基带信号与射频信号的转换以及对射频信号的处理,通信电路则包括有上述相控阵。通信电路主要用于收发电磁波形式的射频信号。输入输出装置,例如触摸屏、显示屏,键盘等主要用于接收用户输入的数据以及对用户输出数据。It should be understood that the electronic device 300 here may specifically be a terminal device such as a smart phone, a computer, and a smart watch. Taking the smart phone 310 shown in FIG. 17 as an example, the terminal device may specifically include a processor 3102, a memory 3103, a communication circuit, an antenna, and an input and output device. The processor 3102 is mainly used to process communication protocols and communication data, control the entire smartphone, execute software programs, and process data of the software programs, for example, to support the smartphone 310 to realize various communication functions (such as making calls, send a message or live chat, etc.). The memory 3103 is mainly used for storing software programs and data. The communication circuit is mainly used for the conversion of the baseband signal and the radio frequency signal and the processing of the radio frequency signal, and the communication circuit includes the above-mentioned phased array. Communication circuits are mainly used to send and receive radio frequency signals in the form of electromagnetic waves. Input and output devices, such as touch screens, display screens, and keyboards, are mainly used to receive data input by users and output data to users.
当上述智能手机310开机后,处理器3102可以读取存储器3103的软件程序,解释并执行软件程序的指令,处理软件程序的数据。当需要通过无线发送数据时,处理器3102对待发送的数据进行基带处理后,输出基带信号至射频电路,射频电路将基带信号进行射频 处理后将射频信号通过天线以电磁波的形式向外发送。当有数据发送到智能手机310时,射频电路通过天线接收到射频信号,将射频信号转换为基带信号,并将基带信号输出至处理器3102,处理器3102将基带信号转换为数据并对该数据进行处理。When the smart phone 310 is powered on, the processor 3102 can read the software program in the memory 3103, interpret and execute the instructions of the software program, and process the data of the software program. When needing to send data by wireless, after the processor 3102 carries out baseband processing to the data to be sent, the output baseband signal is sent to the radio frequency circuit, and the radio frequency circuit sends the radio frequency signal to the outside in the form of electromagnetic waves through the antenna after the baseband signal is processed by radio frequency. When data is sent to the smartphone 310, the radio frequency circuit receives the radio frequency signal through the antenna, converts the radio frequency signal into a baseband signal, and outputs the baseband signal to the processor 3102, and the processor 3102 converts the baseband signal into data and sends the data to the data. to be processed.
本领域技术人员可以理解,为了便于说明,图17仅示出了一个存储器和一个处理器。在实际的终端设备中,可以存在多个处理器和多个存储器。存储器也可以称为存储介质或者存储设备等。需要说明的是,本申请实施例对存储器的类型不做限定。Those skilled in the art can understand that, for the convenience of description, FIG. 17 only shows one memory and one processor. In an actual terminal device, there may be multiple processors and multiple memories. The memory may also be referred to as a storage medium or a storage device or the like. It should be noted that the embodiment of the present application does not limit the type of the memory.
以上,仅为本申请的具体实施方式,但本申请的保护范围并不局限于此,任何熟悉本技术领域的技术人员在本申请揭露的技术范围内,可轻易想到变化或替换,都应涵盖在本申请的保护范围之内。因此,本申请的保护范围应以权利要求的保护范围为准。The above are only specific embodiments of the present application, but the protection scope of the present application is not limited to this. Any person skilled in the art can easily think of changes or replacements within the technical scope disclosed in the present application, and should cover within the scope of protection of this application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.

Claims (19)

  1. 一种移相器,其特征在于,所述移相器包括可变增益放大器,所述可变增益放大器包括:差分电路、电容电路和控制电路;A phase shifter, characterized in that the phase shifter comprises a variable gain amplifier, and the variable gain amplifier comprises: a differential circuit, a capacitor circuit and a control circuit;
    所述差分电路,包括第一信号输入端和第二信号输入端;the differential circuit includes a first signal input end and a second signal input end;
    所述电容电路,包括第一电容、第一开关、第二电容和第二开关,所述第一电容通过所述第一开关耦合在所述差分电路的第一信号输入端与公共地之间,所述第二电容通过所述第二开关耦合在所述差分电路的第二信号输入端与公共地之间;The capacitor circuit includes a first capacitor, a first switch, a second capacitor and a second switch, and the first capacitor is coupled between the first signal input end of the differential circuit and the common ground through the first switch , the second capacitor is coupled between the second signal input terminal of the differential circuit and the common ground through the second switch;
    所述控制电路,用于控制所述第一开关和所述第二开关导通或者关断。The control circuit is configured to control the first switch and the second switch to be turned on or off.
  2. 根据权利要求1所述的移相器,其特征在于,所述可变增益放大器还包括电流源电路,所述电流源电路用于为所述差分电路提供偏置电流。The phase shifter according to claim 1, wherein the variable gain amplifier further comprises a current source circuit for providing a bias current for the differential circuit.
  3. 根据权利要求2所述的移相器,其特征在于,所述可变增益放大器还包括电流镜电路,所述电流镜电路用于向所述电流源电路提供镜像电流。The phase shifter according to claim 2, wherein the variable gain amplifier further comprises a current mirror circuit, and the current mirror circuit is configured to provide a mirror current to the current source circuit.
  4. 根据权利要求3所述的移相器,其特征在于,所述可变增益放大器还包括数模转换器,所述数模转换器用于向所述电流镜电路提供控制信号。The phase shifter according to claim 3, wherein the variable gain amplifier further comprises a digital-to-analog converter, and the digital-to-analog converter is used to provide a control signal to the current mirror circuit.
  5. 根据权利要求4所述的移相器,其特征在于,所述差分电路包括第一差分电路和第二差分电路,所述电流源电路包括第一电流源和第二电流源;以及The phase shifter of claim 4, wherein the differential circuit includes a first differential circuit and a second differential circuit, and the current source circuit includes a first current source and a second current source; and
    所述第一电流源用于向所述第一差分电路提供第一偏置电流;the first current source is used for providing a first bias current to the first differential circuit;
    所述第二电流源用于向所述第二差分电路提供第二偏置电流。The second current source is used to provide a second bias current to the second differential circuit.
  6. 根据权利要求5所述的移相器,其特征在于,所述电流镜电路包括第一电流镜和第二电流镜;以及The phase shifter of claim 5, wherein the current mirror circuit comprises a first current mirror and a second current mirror; and
    所述第一电流镜用于向所述第一电流源提供镜像电流;the first current mirror is used for providing a mirror current to the first current source;
    所述第二电流镜用于向所述第二电流源提供镜像电流。The second current mirror is used for providing a mirror current to the second current source.
  7. 根据权利要求6所述的移相器,其特征在于,所述数模转换器包括第一输出端和第二输出端;The phase shifter according to claim 6, wherein the digital-to-analog converter comprises a first output terminal and a second output terminal;
    所述第一输出端用于向所述第一电流镜提供第一控制信号;the first output terminal is used for providing a first control signal to the first current mirror;
    所述第二输出端用于向所述第二电流镜提供第二控制信号。The second output terminal is used for providing a second control signal to the second current mirror.
  8. 根据权利要求1所述的移相器,其特征在于,所述可变增益放大器还包括数模转换器,所述数模转换器用于向所述差分电路提供偏置电压。The phase shifter of claim 1, wherein the variable gain amplifier further comprises a digital-to-analog converter for providing a bias voltage to the differential circuit.
  9. 根据权利要求8所述的移相器,其特征在于,The phase shifter according to claim 8, wherein,
    所述差分电路包括第一差分电路和第二差分电路;The differential circuit includes a first differential circuit and a second differential circuit;
    所述数模转换器包括第一输出端和第二输出端;The digital-to-analog converter includes a first output terminal and a second output terminal;
    所述第一输出端用于向所述第一差分电路提供第一偏置电压;the first output terminal is used to provide a first bias voltage to the first differential circuit;
    所述第二输出端用于向所述第二差分电路提供第二偏置电压。The second output terminal is used for providing a second bias voltage to the second differential circuit.
  10. 根据权利要求1-9任一项所述的移相器,其特征在于,所述电容电路还包括第三电容、第三开关、第四电容和第四开关,所述第三电容通过所述第三开关耦合在所述差分电路的第一信号输出端与公共地之间,所述第四电容通过所述第四开关耦合在所述差分电路的第二信号输出端与公共地之间。The phase shifter according to any one of claims 1-9, wherein the capacitor circuit further comprises a third capacitor, a third switch, a fourth capacitor and a fourth switch, and the third capacitor passes through the The third switch is coupled between the first signal output terminal of the differential circuit and the common ground, and the fourth capacitor is coupled between the second signal output terminal of the differential circuit and the common ground through the fourth switch.
  11. 根据权利要求5或9所述的移相器,其特征在于,所述第一差分电路包括第一输 出端和第二输出端,所述第二差分电路包括第一输出端和第二输出端;The phase shifter according to claim 5 or 9, wherein the first differential circuit comprises a first output terminal and a second output terminal, and the second differential circuit comprises a first output terminal and a second output terminal ;
    所述第一差分电路的第一输出端和第二差分电路的第一输出端均耦合至所述差分电路的第一信号输出端;The first output terminal of the first differential circuit and the first output terminal of the second differential circuit are both coupled to the first signal output terminal of the differential circuit;
    所述第一差分电路的第二输出端和所述二差分电路的第二输出端均耦合至所述差分电路的第二信号输出端。The second output terminal of the first differential circuit and the second output terminal of the second differential circuit are both coupled to the second signal output terminal of the differential circuit.
  12. 根据权利要求1-11任一项所述的移相器,其特征在于,所述差分电路为吉尔伯特结构电路,所述差分电路包括第一晶体管、第二晶体管、第三晶体管和第四晶体管;The phase shifter according to any one of claims 1-11, wherein the differential circuit is a Gilbert structure circuit, and the differential circuit comprises a first transistor, a second transistor, a third transistor and a fourth transistor transistor;
    所述第一晶体管的第一极和所述第三晶体管的第一极耦合至所述差分电路的第一信号输出端;The first pole of the first transistor and the first pole of the third transistor are coupled to the first signal output terminal of the differential circuit;
    所述第二晶体管的第一极和所述第四晶体管的第一极耦合至所述差分电路的第二信号输出端;The first pole of the second transistor and the first pole of the fourth transistor are coupled to the second signal output terminal of the differential circuit;
    所述第一晶体管的第二极和所述第二晶体管的第二极耦合至所述差分电路的第一信号输入端或者第一偏置电流输入端;A second pole of the first transistor and a second pole of the second transistor are coupled to a first signal input terminal or a first bias current input terminal of the differential circuit;
    所述第三晶体管的第二极和所述第四晶体管的第二极耦合至所述差分电路的第二信号输入端或者第二偏置电流输入端。The second pole of the third transistor and the second pole of the fourth transistor are coupled to a second signal input terminal or a second bias current input terminal of the differential circuit.
  13. 根据权利要求12所述的移相器,其特征在于,所述第一晶体管、第二晶体管、第三晶体管和第四晶体管为NMOS晶体管;The phase shifter according to claim 12, wherein the first transistor, the second transistor, the third transistor and the fourth transistor are NMOS transistors;
    所述第一晶体管的第一极为漏极,所述第一晶体管的第二极为源极;The first electrode of the first transistor is a drain electrode, and the second electrode of the first transistor is a source electrode;
    所述第二晶体管的第一极为漏极,所述第一晶体管的第二极为源极;The first electrode of the second transistor is a drain electrode, and the second electrode of the first transistor is a source electrode;
    所述第三晶体管的第一极为漏极,所述第三晶体管的第二极为源极;The first electrode of the third transistor is the drain electrode, and the second electrode of the third transistor is the source electrode;
    所述第四晶体管的第一极为漏极,所述第四晶体管的第二极为源极。The first electrode of the fourth transistor is the drain electrode, and the second electrode of the fourth transistor is the source electrode.
  14. 根据权利要求1-13任一项所述的移相器,其特征在于,所述移相器包括第一输出端、第二输出端以及多个所述可变增益放大器;The phase shifter according to any one of claims 1-13, wherein the phase shifter comprises a first output terminal, a second output terminal and a plurality of the variable gain amplifiers;
    所述多个可变增益放大器包括第一可变增益放大器和第二可变增益放大器;the plurality of variable gain amplifiers include a first variable gain amplifier and a second variable gain amplifier;
    所述第一可变增益放大器的第一信号输出端和所述第二可变增益放大器的第一信号输出端均耦合至所述矢量移相器第一输出端;The first signal output end of the first variable gain amplifier and the first signal output end of the second variable gain amplifier are both coupled to the first output end of the vector phase shifter;
    所述第一可变增益放大器的第二信号输出端和所述第二可变增益放大器的第二信号输出端均耦合至所述矢量移相器第二输出端。The second signal output terminal of the first variable gain amplifier and the second signal output terminal of the second variable gain amplifier are both coupled to the second output terminal of the vector phase shifter.
  15. 根据权利要求14所述的移相器,其特征在于,所述移相器还包括正交发生器和处理器;The phase shifter of claim 14, wherein the phase shifter further comprises a quadrature generator and a processor;
    所述正交发生器用于:向所述第一可变增益放大器提供第一信号和第二信号,向所述第二可变增益放大器提供第三信号和第四信号,所述第一信号和所述第二信号为差分信号,所述第三信号和所述第四信号为差分信号,所述第一信号和所述三信号为正交信号,所述第二信号和所述第四信号为正交信号;The quadrature generator is used for: providing a first signal and a second signal to the first variable gain amplifier, providing a third signal and a fourth signal to the second variable gain amplifier, the first signal and The second signal is a differential signal, the third signal and the fourth signal are differential signals, the first signal and the three signals are quadrature signals, the second signal and the fourth signal is a quadrature signal;
    所述处理器用于:从所述第一可变增益放大器接收第五信号和第六信号,从所述第二可变增益放大器接收第七信号和第八信号,基于所述第五信号、第六信号、第七信号和第八信号,生成矢量合成信号。The processor is configured to: receive a fifth signal and a sixth signal from the first variable gain amplifier, receive a seventh signal and an eighth signal from the second variable gain amplifier, and based on the fifth signal, the sixth signal The sixth signal, the seventh signal, and the eighth signal, generate a vector composite signal.
  16. 一种相控阵,其特征在于,包括多个信号传输通道和多个天线;A phased array, characterized in that it includes multiple signal transmission channels and multiple antennas;
    所述多个信号传输通道与所述多个天线对应耦合;the plurality of signal transmission channels are correspondingly coupled to the plurality of antennas;
    所述多个信号传输通道中的每一个信号传输通道包括如权利要求1-15任一项所述的移相器。Each of the plurality of signal transmission channels includes a phase shifter as claimed in any one of claims 1-15.
  17. 根据权利要求16所述的相控阵,其特征在于,所述多个信号传输通道中的每一个信号传输通道还包括如权利要求1-15任一项中所述的可变增益放大器。The phased array according to claim 16, wherein each signal transmission channel in the plurality of signal transmission channels further comprises the variable gain amplifier according to any one of claims 1-15.
  18. 一种电子设备,其特征在于,包括收发器,所述收发器设置于电路板上;An electronic device, characterized in that it includes a transceiver, and the transceiver is arranged on a circuit board;
    所述收发器包括如权利要求16-17任一项所述的相控阵。The transceiver comprises a phased array as claimed in any of claims 16-17.
  19. 一种终端,其特征在于,所述终端包括输入输出装置和通信电路;A terminal, characterized in that the terminal includes an input and output device and a communication circuit;
    所述通信电路包括收发器,所述收发器设置于电路板上;The communication circuit includes a transceiver, and the transceiver is arranged on a circuit board;
    所述收发器包括如权利要求16-17任一项所述的相控阵。The transceiver comprises a phased array as claimed in any of claims 16-17.
PCT/CN2021/081564 2021-03-18 2021-03-18 Phase shifter, phased array, electronic device and terminal device WO2022193236A1 (en)

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050253633A1 (en) * 2004-05-13 2005-11-17 Nec Electronics Corporation PLL circuit and frequency setting circuit using the same
CN108463948A (en) * 2016-01-05 2018-08-28 派瑞格恩半导体有限公司 RF phase shifters based on reflection
CN109802652A (en) * 2019-01-10 2019-05-24 复旦大学 A kind of phase shifter of 5G phased array
CN112015225A (en) * 2020-08-25 2020-12-01 成都天锐星通科技有限公司 Phased array chip and phased array system

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050253633A1 (en) * 2004-05-13 2005-11-17 Nec Electronics Corporation PLL circuit and frequency setting circuit using the same
CN108463948A (en) * 2016-01-05 2018-08-28 派瑞格恩半导体有限公司 RF phase shifters based on reflection
CN109802652A (en) * 2019-01-10 2019-05-24 复旦大学 A kind of phase shifter of 5G phased array
CN112015225A (en) * 2020-08-25 2020-12-01 成都天锐星通科技有限公司 Phased array chip and phased array system

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