WO2022188146A1 - 阵列基板、微流控装置、微流控系统、荧光检测方法 - Google Patents

阵列基板、微流控装置、微流控系统、荧光检测方法 Download PDF

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WO2022188146A1
WO2022188146A1 PCT/CN2021/080444 CN2021080444W WO2022188146A1 WO 2022188146 A1 WO2022188146 A1 WO 2022188146A1 CN 2021080444 W CN2021080444 W CN 2021080444W WO 2022188146 A1 WO2022188146 A1 WO 2022188146A1
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Prior art keywords
substrate
layer
orthographic projection
array substrate
opening
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PCT/CN2021/080444
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English (en)
French (fr)
Inventor
邓睿君
杨帆
刘祝凯
丁丁
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京东方科技集团股份有限公司
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Priority to US17/753,161 priority Critical patent/US20230158500A1/en
Priority to PCT/CN2021/080444 priority patent/WO2022188146A1/zh
Priority to CN202180000466.XA priority patent/CN115605743A/zh
Priority to EP21929621.7A priority patent/EP4141420A4/en
Publication of WO2022188146A1 publication Critical patent/WO2022188146A1/zh

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/64—Fluorescence; Phosphorescence
    • G01N21/645—Specially adapted constructive features of fluorimeters
    • G01N21/6452—Individual samples arranged in a regular 2D-array, e.g. multiwell plates
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01L—CHEMICAL OR PHYSICAL LABORATORY APPARATUS FOR GENERAL USE
    • B01L3/00—Containers or dishes for laboratory use, e.g. laboratory glassware; Droppers
    • B01L3/50—Containers for the purpose of retaining a material to be analysed, e.g. test tubes
    • B01L3/502—Containers for the purpose of retaining a material to be analysed, e.g. test tubes with fluid transport, e.g. in multi-compartment structures
    • B01L3/5027—Containers for the purpose of retaining a material to be analysed, e.g. test tubes with fluid transport, e.g. in multi-compartment structures by integrated microfluidic structures, i.e. dimensions of channels and chambers are such that surface tension forces are important, e.g. lab-on-a-chip
    • B01L3/502761—Containers for the purpose of retaining a material to be analysed, e.g. test tubes with fluid transport, e.g. in multi-compartment structures by integrated microfluidic structures, i.e. dimensions of channels and chambers are such that surface tension forces are important, e.g. lab-on-a-chip specially adapted for handling suspended solids or molecules independently from the bulk fluid flow, e.g. for trapping or sorting beads, for physically stretching molecules
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01L—CHEMICAL OR PHYSICAL LABORATORY APPARATUS FOR GENERAL USE
    • B01L3/00—Containers or dishes for laboratory use, e.g. laboratory glassware; Droppers
    • B01L3/50—Containers for the purpose of retaining a material to be analysed, e.g. test tubes
    • B01L3/508—Containers for the purpose of retaining a material to be analysed, e.g. test tubes rigid containers not provided for above
    • B01L3/5085—Containers for the purpose of retaining a material to be analysed, e.g. test tubes rigid containers not provided for above for multiple samples, e.g. microtitration plates
    • B01L3/50851—Containers for the purpose of retaining a material to be analysed, e.g. test tubes rigid containers not provided for above for multiple samples, e.g. microtitration plates specially adapted for heating or cooling samples
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01L—CHEMICAL OR PHYSICAL LABORATORY APPARATUS FOR GENERAL USE
    • B01L7/00—Heating or cooling apparatus; Heat insulating devices
    • B01L7/52—Heating or cooling apparatus; Heat insulating devices with provision for submitting samples to a predetermined sequence of different temperatures, e.g. for treating nucleic acid samples
    • C—CHEMISTRY; METALLURGY
    • C12—BIOCHEMISTRY; BEER; SPIRITS; WINE; VINEGAR; MICROBIOLOGY; ENZYMOLOGY; MUTATION OR GENETIC ENGINEERING
    • C12M—APPARATUS FOR ENZYMOLOGY OR MICROBIOLOGY; APPARATUS FOR CULTURING MICROORGANISMS FOR PRODUCING BIOMASS, FOR GROWING CELLS OR FOR OBTAINING FERMENTATION OR METABOLIC PRODUCTS, i.e. BIOREACTORS OR FERMENTERS
    • C12M1/00—Apparatus for enzymology or microbiology
    • C12M1/34—Measuring or testing with condition measuring or sensing means, e.g. colony counters
    • C—CHEMISTRY; METALLURGY
    • C12—BIOCHEMISTRY; BEER; SPIRITS; WINE; VINEGAR; MICROBIOLOGY; ENZYMOLOGY; MUTATION OR GENETIC ENGINEERING
    • C12Q—MEASURING OR TESTING PROCESSES INVOLVING ENZYMES, NUCLEIC ACIDS OR MICROORGANISMS; COMPOSITIONS OR TEST PAPERS THEREFOR; PROCESSES OF PREPARING SUCH COMPOSITIONS; CONDITION-RESPONSIVE CONTROL IN MICROBIOLOGICAL OR ENZYMOLOGICAL PROCESSES
    • C12Q1/00—Measuring or testing processes involving enzymes, nucleic acids or microorganisms; Compositions therefor; Processes of preparing such compositions
    • C12Q1/68—Measuring or testing processes involving enzymes, nucleic acids or microorganisms; Compositions therefor; Processes of preparing such compositions involving nucleic acids
    • C12Q1/6844—Nucleic acid amplification reactions
    • G—PHYSICS
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    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/64—Fluorescence; Phosphorescence
    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B01L2200/00—Solutions for specific problems relating to chemical or physical laboratory apparatus
    • B01L2200/06—Fluid handling related problems
    • B01L2200/0647—Handling flowable solids, e.g. microscopic beads, cells, particles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01L—CHEMICAL OR PHYSICAL LABORATORY APPARATUS FOR GENERAL USE
    • B01L2200/00—Solutions for specific problems relating to chemical or physical laboratory apparatus
    • B01L2200/16—Reagents, handling or storing thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01L—CHEMICAL OR PHYSICAL LABORATORY APPARATUS FOR GENERAL USE
    • B01L2300/00—Additional constructional details
    • B01L2300/06—Auxiliary integrated devices, integrated components
    • B01L2300/0627—Sensor or part of a sensor is integrated
    • B01L2300/0645—Electrodes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01L—CHEMICAL OR PHYSICAL LABORATORY APPARATUS FOR GENERAL USE
    • B01L2300/00—Additional constructional details
    • B01L2300/06—Auxiliary integrated devices, integrated components
    • B01L2300/0627—Sensor or part of a sensor is integrated
    • B01L2300/0654—Lenses; Optical fibres
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01L—CHEMICAL OR PHYSICAL LABORATORY APPARATUS FOR GENERAL USE
    • B01L2300/00—Additional constructional details
    • B01L2300/08—Geometry, shape and general structure
    • B01L2300/0809—Geometry, shape and general structure rectangular shaped
    • B01L2300/0829—Multi-well plates; Microtitration plates
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01L—CHEMICAL OR PHYSICAL LABORATORY APPARATUS FOR GENERAL USE
    • B01L2300/00—Additional constructional details
    • B01L2300/08—Geometry, shape and general structure
    • B01L2300/0887—Laminated structure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01L—CHEMICAL OR PHYSICAL LABORATORY APPARATUS FOR GENERAL USE
    • B01L2300/00—Additional constructional details
    • B01L2300/16—Surface properties and coatings
    • B01L2300/161—Control and use of surface tension forces, e.g. hydrophobic, hydrophilic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01L—CHEMICAL OR PHYSICAL LABORATORY APPARATUS FOR GENERAL USE
    • B01L2300/00—Additional constructional details
    • B01L2300/18—Means for temperature control
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01L—CHEMICAL OR PHYSICAL LABORATORY APPARATUS FOR GENERAL USE
    • B01L2300/00—Additional constructional details
    • B01L2300/18—Means for temperature control
    • B01L2300/1805—Conductive heating, heat from thermostatted solids is conducted to receptacles, e.g. heating plates, blocks
    • B01L2300/1827—Conductive heating, heat from thermostatted solids is conducted to receptacles, e.g. heating plates, blocks using resistive heater
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/64—Fluorescence; Phosphorescence
    • G01N21/645—Specially adapted constructive features of fluorimeters
    • G01N2021/6463—Optics
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2201/00—Features of devices classified in G01N21/00
    • G01N2201/06—Illumination; Optics
    • G01N2201/064—Stray light conditioning

Definitions

  • the present disclosure relates to the field of biomedical detection, and in particular, to an array substrate, a microfluidic device including the array substrate, a microfluidic system including the microfluidic device, and a fluorescence detection method.
  • Polymerase chain reaction (Polymerase Chain Reaction, PCR) is a molecular biology technique used to amplify specific DNA fragments, which can replicate a small amount of deoxyribonucleic acid (DNA) in large quantities and increase its number significantly.
  • Digital polymerase chain reaction (digital PCR, dPCR) technology is a quantitative analysis technology developed on the basis of PCR that can provide digital DNA quantitative information. Its combination with microfluidic technology has greatly improved the sensitivity and accuracy. .
  • dPCR digital polymerase chain reaction
  • nucleic acid samples are sufficiently diluted so that the number of target molecules (ie, DNA templates) in each reaction unit is less than or equal to one.
  • PCR amplification is performed on the target molecule in each reaction unit, and after the amplification is completed, the fluorescence signal of each reaction unit is statistically analyzed, so as to realize the absolute quantitative detection of single-molecule DNA. Due to the advantages of high sensitivity, strong specificity, high detection throughput, and accurate quantification, dPCR has been widely used in clinical diagnosis, gene instability analysis, single-cell gene expression, environmental microbial detection, and prenatal diagnosis.
  • an array substrate including at least one recessed portion.
  • the array substrate is located in a plane, and the ratio of the area of the orthographic projection of the at least one recessed portion on the plane to the area of the orthographic projection of the array substrate on the plane is between 0.05 and 0.60.
  • the array substrate further includes: a first substrate; a defining layer on the first substrate that defines the at least one recess; and a blocking layer that defines at least one opening.
  • the orthographic projection of the at least one opening on the first substrate at least partially overlaps the orthographic projection of the at least one recessed portion on the first substrate, and the blocking layer is on the first substrate.
  • the orthographic projection on the defining layer at least partially overlaps the orthographic projection of the defining layer on the first substrate.
  • the at least one recess extends through the defining layer.
  • the blocking layer is located between the first substrate and the defining layer.
  • the blocking layer is located on a side of the first substrate away from the defining layer.
  • the blocking layer includes a first portion located on a side of the defining layer remote from the first substrate and attached to a side of the defining layer and remote from the first substrate on the surface of the substrate.
  • the first portion defines the at least one opening.
  • the blocking layer further includes a second portion attached to a surface of the defining layer proximate the first substrate to jointly surround the first portion with the first portion limit layer.
  • the second portion defines the at least one opening.
  • an orthographic projection of the at least one opening defined by the first portion of the shielding layer on the first substrate and the at least one opening defined by the second portion of the shielding layer are on the first substrate The orthographic projections on the first substrate completely overlap.
  • the surface of the confinement layer close to the first substrate and/or the surface of the confinement layer away from the first substrate constitutes the shielding layer.
  • a tangent line located at any point on the sidewall of the at least one recessed portion forms an angle with the plane on which the array substrate is located, and the angle is not equal to 90°.
  • the defining layer defines a plurality of recesses
  • the blocking layer defines a plurality of openings
  • the plurality of recesses are in a one-to-one correspondence with the plurality of openings
  • each of the plurality of openings An orthographic projection on the first substrate is located within an orthographic projection of a recess corresponding to the opening on the first substrate.
  • the shape of the orthographic projection of each of the at least one recess and each of the at least one opening on the first substrate includes a circle or a regular polygon.
  • the defining layer defines a plurality of recesses
  • the blocking layer defines a plurality of openings
  • the plurality of recesses are in a one-to-one correspondence with the plurality of openings
  • each of the plurality of openings An orthographic projection on the first substrate is located within an orthographic projection of a recess corresponding to the opening on the first substrate.
  • the shape of the orthographic projection of each of the openings and the concave portion corresponding to the opening on the first substrate is a circle, the diameter of each of the openings is in the range of 20-80 ⁇ m, and The diameter of the concave portion corresponding to the opening is in the range of 25-90 ⁇ m; or, the shape of the orthographic projection of each opening on the first substrate is a first regular polygon.
  • the shape of the orthographic projection of the recess corresponding to the opening on the first substrate is a second regular polygon, the diameter of the inscribed circle of the first regular polygon is in the range of 20-80 ⁇ m, and the second regular polygon The diameter of the inscribed circle of the regular polygon is in the range of 25 to 90 ⁇ m.
  • the material of the defining layer includes photoresist.
  • the material of the shielding layer includes an opaque material, and the opaque material includes chromium, chromium oxide, and black resin.
  • a thickness of the blocking layer in a direction perpendicular to the first substrate is in the range of 0.6 ⁇ 2.4 ⁇ m.
  • the array substrate further includes a heater electrode positioned between the first substrate and the defining layer, the heater electrode being configured to heat the at least one recessed portion.
  • the material of the heater electrode includes indium tin oxide.
  • the heater electrode includes a plurality of subsections that are separated from each other.
  • the array substrate further includes a conductive layer.
  • the conductive layer is located between the first substrate and the heater electrode and is electrically connected to the heater electrode, and an orthographic projection of at least a portion of the conductive layer on the first substrate falls on the heater electrode
  • a heater electrode is at the periphery of an orthographic projection on the first substrate, and the conductive layer at least partially surrounds the heater electrode.
  • the array substrate further includes a hydrophilic layer and a first hydrophobic layer.
  • the hydrophilic layer at least covers the sidewall of the at least one recess, and the first hydrophobic layer is located on a side of the limiting layer away from the first substrate and is further away from the surface than the hydrophilic layer. the first substrate.
  • the hydrophilic layer further covers the surface of the defining layer remote from the first substrate and the bottom of the at least one recess.
  • the first hydrophobic layer defines a plurality of holes
  • the defining layer defines a plurality of depressions
  • the blocking layer defines a plurality of openings
  • the plurality of holes, the plurality of depressions and the The plurality of openings are in one-to-one correspondence.
  • the first orthographic projection of each of the plurality of holes on the first substrate and the third orthographic projection of an opening corresponding to the hole on the first substrate are both located at the corresponding hole of the hole.
  • a recess is within a second orthographic projection on the first substrate, and the first orthographic projection, the second orthographic projection, and the third orthographic projection form concentric rings.
  • the first orthographic projection is located between the second orthographic projection and the third orthographic projection
  • the third orthographic projection is located within the first orthographic projection.
  • the ratio of the area of the first hydrophobic layer to the area of the hydrophilic layer is between 0.01 and 2.00.
  • a microfluidic device comprising the array substrate described in any one of the preceding embodiments, and an opposite substrate cell-to-cell with the array substrate and located in the array substrate. the space between the array substrate and the opposite substrate.
  • the opposing substrate includes: a second substrate; and a second hydrophobic layer on a side of the second substrate close to the first substrate.
  • the opposing substrate includes at least one through hole penetrating the second substrate and the second hydrophobic layer.
  • the material of the first substrate and the second substrate includes glass.
  • the second hydrophobic layer includes a light absorbing material, and the light absorbing material includes at least one of TiO 2 and TiON.
  • a microfluidic system comprising a control device and the microfluidic device described in any of the preceding embodiments.
  • the control device is electrically connected to the microfluidic device and is configured to control the temperature of the microfluidic device.
  • a fluorescence detection method comprising: accommodating a reagent to be detected in at least one recess of the microfluidic device described in any one of the preceding embodiments; Light of one wavelength is irradiated to the at least one recessed portion through at least one opening defined by the blocking layer; and light of a second wavelength emitted by the reagent to be detected is detected.
  • FIG. 1 shows a partial cross-sectional view of an array substrate provided according to an embodiment of the present disclosure
  • FIG. 2 shows a partial cross-sectional view of an array substrate provided according to an embodiment of the present disclosure
  • FIG. 3 shows a partial top plan view of a shielding layer and a defining layer defining a recess in an array substrate provided according to an embodiment of the present disclosure
  • FIG. 4 shows a top plan view of a defining layer defining a recess in an array substrate provided according to an embodiment of the present disclosure
  • FIG. 5 shows a top plan view of an array substrate provided according to an embodiment of the present disclosure
  • FIG. 6 shows a top plan view of a part of a structure in an array substrate provided according to an embodiment of the present disclosure
  • FIG. 7 shows a partial cross-sectional view of an array substrate provided according to another embodiment of the present disclosure.
  • FIG. 8 shows a partial cross-sectional view of an array substrate provided according to yet another embodiment of the present disclosure.
  • FIG. 9 shows a partial cross-sectional view of an array substrate provided according to still another embodiment of the present disclosure.
  • FIG. 10 shows a partial cross-sectional view of a microfluidic device provided according to an embodiment of the present disclosure
  • FIG. 11 shows a block diagram of a microfluidic system provided according to an embodiment of the present disclosure
  • FIG. 12 shows a flowchart of a fluorescence detection method provided according to an embodiment of the present disclosure
  • FIG. 13 shows a schematic diagram of a fluorescence detection process of a microfluidic device provided according to an embodiment of the present disclosure
  • FIG. 14A shows a fluorescent picture of the microfluidic device in the related art after being irradiated by a light source
  • FIG. 14B shows a fluorescent picture of the microfluidic device provided according to an embodiment of the present disclosure after being irradiated by a light source.
  • dPCR technology is widely used in clinical diagnosis, gene instability analysis, single-cell gene expression, environmental microbial detection, and prenatal diagnosis.
  • excitation light of a certain wavelength it is usually necessary to use excitation light of a certain wavelength to perform fluorescence detection on the reagents to be detected in each reaction chamber.
  • the inventors found that, in a conventional microfluidic device, since the area occupied by all the reaction chambers is much smaller than that of the microfluidic device, that is, each reaction chamber has a very small volume, each reaction chamber has a very small volume.
  • the reaction system solution in the cavity cannot fully perform the amplification reaction, so a smaller dose of the reagent to be detected is obtained.
  • the reagent to be detected which is much lower than the required dose, cannot radiate the desired fluorescence intensity under the irradiation of excitation light, which seriously affects the fluorescence detection accuracy of the reagent to be detected in the reaction chamber, and further causes the resulting fluorescence detection.
  • the results do not meet diagnostic requirements in the biomedical field (eg single-cell analysis, early cancer diagnosis and prenatal diagnosis).
  • the "reagent to be detected” refers to the reagent after the polymerase chain reaction of the reaction system solution in the microfluidic device, that is, the reaction system reagent after the amplification reaction is completed.
  • embodiments of the present disclosure provide an array substrate, a microfluidic device, a microfluidic system, and a fluorescence detection method.
  • the array substrate can improve the fluorescence detection accuracy of the reagent to be detected in the microfluidic device including the array substrate.
  • an array substrate 100 is provided.
  • FIG. 1 shows a partial cross-sectional view of the array substrate 100
  • FIG. 2 shows another cross-sectional view of the array substrate 100 ( FIG. 2 is a cross-sectional view taken along the line AA′ of FIG. 5 )
  • FIG. 3 shows A top plan view of some structures in the array substrate 100 is shown.
  • the array substrate 100 includes at least one concave portion 103
  • the array substrate 100 is located in a plane
  • the area of the orthographic projection of the at least one concave portion 103 on the plane is the same as the orthographic area of the array substrate 100 on the plane.
  • the ratio of the projected areas is between 0.05 and 0.60.
  • the ratio of the area of the orthographic projection of the at least one recess 103 on the plane to the area of the orthographic projection of the array substrate 100 on the plane may be 0.05, 0.10, 0.15, 0.20, 0.25, 0.30, 0.35, 0.40, 0.45 , 0.50, 0.55, 0.60.
  • the plane on which the array substrate 100 is located refers to the plane on which the array substrate 100 as a whole is located, and the array substrate 100 extends in the plane.
  • the number of the at least one recess 103 may be 2,000 to 1,000,000. In some examples, the number of the at least one recessed portion 103 may be 40,000 to 100,000.
  • the number of at least one recessed portion 103 is 22,500.
  • the shape of the orthographic projection of each concave portion 103 on the plane where the array substrate 100 is located may be any suitable shape, such as circle, ellipse, rectangle, square, triangle, regular hexagon, polygon (eg, regular polygon), irregular shape, etc. shape.
  • the concave portion 103 is used for accommodating a reaction system solution (eg, DNA molecules), and the reagent to be detected is obtained after the quantity of the reaction system solution is amplified by dPCR technology.
  • the inventors of the present application have designed the area ratio of the plurality of recesses 103 to the array substrate 100 to make the two have a suitable area ratio, that is, to make the orthographic projection of the plurality of recesses 103 on the plane where the array substrate 100 is located
  • the ratio of the area of the array substrate 100 to the area of the orthographic projection of the array substrate 100 on the plane is between 0.05 and 0.60, so that the array substrate 100 can have an appropriate number of recesses 103 with an appropriate chamber volume, so that each recess can be
  • the reaction system solution contained in 103 can perform a sufficient dPCR reaction, and the utilization rate of the reaction system solution is improved, so that more doses of the reagent to be detected can be obtained after amplification.
  • the dose of the reagent to be detected can radiate a desired fluorescence intensity under the irradiation of excitation light, so that the fluorescence detection accuracy of the reagent to be detected can be improved, so that the obtained fluorescence detection result can meet the diagnostic requirements in the biomedical field (for example, single Cell Analysis, Early Cancer Diagnosis and Prenatal Diagnosis).
  • the array substrate 100 further includes: a first substrate 101; a confinement layer 102 on the first substrate 101, the confinement layer 102 defining the at least one recess 103; and a blocking layer 104,
  • the shielding layer 104 defines at least one opening 105 .
  • the orthographic projection of the at least one opening 105 on the first substrate 101 at least partially overlaps with the orthographic projection of the at least one recess 103 on the first substrate 101 , and the orthographic projection of the blocking layer 104 on the first substrate 101 and the definition
  • the orthographic projections of the layer 102 on the first substrate 101 at least partially overlap.
  • the defining layer 102 defines the at least one recessed portion 103
  • the defining layer 102 includes or has at least one recessed portion 103
  • the recessed portion 103 is defined by The layer 102 is formed by patterning, for example, by digging holes in the limiting layer 102 to obtain a plurality of depressions 103 .
  • the confinement layer 102 and the blocking layer 104 are described in this specification, the confinement layer 102 and the blocking layer 104 may be two independent film structures, or may be the same film structure.
  • the defining layer 102 and the shielding layer 104 are two separate film layer structures, the defining layer 102 is formed of a film layer of a suitable material, and the shielding layer 104 is formed of another film layer having light-shielding properties.
  • the defining layer 102 and the blocking layer 104 are the same film layer structure, for example, by modifying a portion of the defining layer 102 (eg, the surface of the defining layer 102 adjacent to the first substrate 101 and/or the surface of the defining layer 102 ).
  • the excitation light of a certain wavelength is irradiated to the recessed portion 103 through the opening 105 defined by the blocking layer 104 in the direction from bottom to top (ie, the direction from the first substrate 101 to the confinement layer 102 in FIG. 1 ), so that the concave portion 103
  • the reagents with fluorescent properties within the portion 103 are excited and emit a fluorescence spectrum.
  • the confinement layer 102 in the array substrate 100 also generally emits undesired fluorescence after being irradiated with excitation light due to its inherent material properties.
  • the shielding layer 104 by disposing the shielding layer 104 and making the orthographic projection of the shielding layer 104 on the first substrate 101 and the orthographic projection of the defining layer 102 on the first substrate 101 at least partially overlap, when excitation When light is irradiated to the concave portion 103 through the opening 105 , the shielding layer 104 can at least partially shield the confinement layer 102 from being irradiated by the excitation light, so as to prevent the confinement layer 102 from being irradiated by the excitation light and causing interference fluorescence. In this way, the excitation light can only excite the reagent to be detected in the concave portion 103 through the opening 105 .
  • the fluorescence interference caused by the limiting layer 102 can be reduced or even avoided, so that the fluorescence signal emitted by the reagent to be detected in the recessed portion 103 can be accurately identified by the detector, so that it can be read more sensitively and accurately
  • the reaction signal improves the fluorescence detection accuracy of the reagent to be detected, and provides image data support for the data analysis of subsequent nucleic acid amplification reactions.
  • clearer microwell array imaging can be achieved, detection errors caused by false positives can be reduced, and interference between different channels in the multi-channel fluorescence signal detection process can be well avoided.
  • a reagent with fluorescent properties means that when the reagent is irradiated with excitation light of a specific wavelength, it will emit fluorescence with a wavelength longer than that of the excitation light in a short period of time. Under the irradiation of the excitation light of the specific wavelength, the reagent is more likely to emit fluorescence than other film layers in the array substrate 100 .
  • the first substrate 101 protects and supports the array substrate 100 .
  • the first substrate 101 can be made of any suitable material, for example, a rigid material or a flexible material including, but not limited to, glass, ceramic, silicon, polyimide, and the like.
  • the first substrate 101 is made of glass, and the glass material can reduce the surface roughness of the first substrate 101 and facilitate the movement of the reaction solution (eg, droplets) on the surface of the corresponding film layer.
  • the defining layer 102 may be made of any suitable material.
  • the material of the defining layer 102 is photoresist.
  • the photoresist may be formed on the first substrate 101 by any suitable means, such as spin coating, and patterned to form the defining layer 102 .
  • the defining layer 102 typically has a relatively thick thickness. In one example, the thickness of the defining layer 102 may range from 5 microns to 100 microns, for example, 9.8 microns.
  • the defining layer 102 defines a plurality of concave portions 103, and the plurality of concave portions 103 are spaced apart from each other. Each concave portion 103 may penetrate through the limiting layer 102 , or may not completely penetrate the limiting layer 102 .
  • the concave portion 103 may penetrate through the defining layer 102 . In this way, when the excitation light is irradiated to the concave portion 103 through the opening 105, the reagent in the concave portion 103 can be directly irradiated, so that the fluorescence detection accuracy of the reagent can be further improved.
  • the concave portion 103 provides a accommodating space for the reaction system solution, and the reaction system solution moved into the concave portion 103 will stay in the concave portion 103 relatively stably.
  • the concave portion 103 may be a groove, a notch, a micropore, etc., as long as there is a space capable of accommodating the reaction system solution, which is not limited in the embodiments of the present disclosure.
  • the shapes of the plurality of concave portions 103 may be completely the same or may be partially different.
  • the shape of the orthographic projection of each recess 103 on the first substrate 101 is a circle.
  • the three-dimensional shape of each recessed portion 103 is, for example, an approximate cylinder, that is, the cross-section in the direction perpendicular to the first substrate 101 is approximately rectangular and the cross-section in the plane parallel to the first substrate 101 is approximately circular.
  • the diameter of the bottom surface of the cylinder ranges from 1 to 100 microns, eg, 20 to 50 microns, 50 to 90 microns.
  • the height of the cylinders ranges from 5 microns to 100 microns, eg, 30 microns to 50 microns.
  • the diameter of the bottom surface of the cylinder is about 50 microns
  • the height of the cylinder is in the range of 40 microns to 50 microns
  • the distance between the centers of two adjacent recesses 103 is about 100 microns.
  • the shape of the concave portion 103 can be designed according to actual requirements.
  • the shape of each concave portion 103 can also be a truncated cone, a rectangular parallelepiped, a polygonal prism, a sphere, an ellipsoid, etc., which are not limited in the embodiments of the present disclosure.
  • the cross-sectional shape of the recessed portion 103 in the plane parallel to the first substrate 101 may be an ellipse, a triangle, a polygon, an irregular shape, etc.
  • the cross-section in a direction perpendicular to the first substrate 101 may be a square , circle, parallelogram, trapezoid and other polygons.
  • the tangent of any point on the sidewall of each recess 103 forms a certain angle with the plane on which the array substrate 100 is located, and the angle is not equal to 90°. That is to say, the sidewall of each recessed portion 103 is not perpendicular to the plane on which the array substrate 100 is located, but has a certain inclination. greater than 90° and less than 180°). In one example, as shown in FIG. 1 , the sidewall of the recessed portion 103 forms an obtuse angle with the plane on which the array substrate 100 is located, and the inclined angle of the sidewall makes the bottom area of the recessed portion 103 smaller than the area of the upper opening corresponding to the bottom. area.
  • the shape of the recessed portion 103 is not limited to this.
  • the sidewall of the recessed portion 103 forms an acute angle with the plane where the array substrate 100 is located, and the inclined angle of the sidewall makes the bottom area of the recessed portion 103 larger than the area of the upper opening corresponding to the bottom.
  • the sidewalls of the concave portions 103 are designed, so that each concave portion 103 can obtain a larger volume in a limited space, so that each concave portion 103 can accommodate more reaction system solutions, and further, after the amplification reaction, it can be Obtaining more doses of the reagent to be detected increases the fluorescence emission intensity of the reagent to be detected, thereby improving the fluorescence detection accuracy of the reagent to be detected.
  • the walls surrounding the inside of the recessed portion 103 can be referred to as the sidewalls of the recessed portion 103 .
  • the sidewalls of the recessed portion 103 are adjacent to the limiting layer 102 , and
  • the height of the sidewall of the portion 103 in the direction perpendicular to the first substrate 101 is substantially the same as the height of the defining layer 102 in the direction perpendicular to the first substrate 101 .
  • the side wall of the recessed portion 103 and the bottom of the recessed portion 103 constitute a reaction chamber of the recessed portion 103 to accommodate the reagent to be detected.
  • the side wall of the recessed portion 103 may be an inclined surface, an arc-shaped surface, or a curved surface with any curvature (for example, a variable curvature). Make specific restrictions.
  • FIG. 3 shows a top plan view of the shielding layer 104 and the confinement layer 102 defining the concave portion 103 in FIG. 2
  • FIG. 4 shows a plan top view of the confinement layer 102 defining the concave portion 103 in the array substrate 100 .
  • Each small circle in 4 represents a depression 103 .
  • the plurality of recesses 103 are uniformly distributed on the first substrate 101 .
  • the plurality of recesses 103 are arranged in an array along the horizontal direction and the vertical direction.
  • the fluorescence image obtained when the microfluidic device including the array substrate 100 is optically detected in the subsequent stage can be relatively regular and neat, so as to obtain the detection result quickly and accurately.
  • the embodiments of the present disclosure are not limited thereto, and the plurality of concave portions 103 may also be unevenly distributed on the first substrate 101 or in other arrangements, which are not limited by the embodiments of the present disclosure.
  • the number of the recessed portions 103 may be 2,000 to 1,000,000. In some examples, the number of recesses 103 is 40,000 to 100,000. In one example, the number of recesses 103 is 22,500. Therefore, the array substrate 100 has a larger detection throughput.
  • the size and quantity of the recessed portion 103 may be determined according to actual requirements, and the size and quantity of the recessed portion 103 are related to the size of the first substrate 101 and the array substrate 100 . Under the condition that the size of the recessed parts 103 is constant, the larger the number of the recessed parts 103, the larger the size of the first substrate 101 and the array substrate 100.
  • the target molecules (ie, DNA molecules) in the reaction system solution are sufficiently diluted, after the reaction system solution enters each recessed part 103, the target molecule in each recessed part 103 is less than or equal to 1, that is, each recessed part Only one target molecule is included in 103 or no target molecule is included, so as to obtain accurate detection results in the subsequent stage.
  • the blocking layer 104 is located between the first substrate 101 and the defining layer 102 .
  • the blocking layer 104 is attached to the bottom surface of the defining layer 102 facing the first substrate 101 .
  • the orthographic projection of the defining layer 102 on the first substrate 101 falls completely within the orthographic projection of the blocking layer 104 on the first substrate 101 , as shown in FIG. 3 . With such an arrangement, the excitation light incident through the opening 105 will not be irradiated on the confinement layer 102 at all.
  • the shielding layer 104 may be made of any suitable material as long as the material can shield or absorb light, and the embodiment of the present disclosure does not specifically limit the material of the shielding layer 104 .
  • the material of the shielding layer 104 is an opaque material, and the opaque material may be, for example, an opaque metal.
  • the material of the blocking layer 104 is a black matrix (BM) commonly used in the display field, and the material of the black matrix includes one or more of chrome, chrome oxide, and black resin.
  • the thickness of the blocking layer 104 in a direction perpendicular to the first substrate 101 is in the range of 0.6 microns to 2.4 microns, eg, 2 microns.
  • the shielding layer 104 defines a plurality of openings 105 , the plurality of openings 105 correspond to the plurality of recesses 103 one-to-one, and the orthographic projection of each opening 105 on the first substrate 101 is located at one of the recesses 103 corresponding to the opening 105 .
  • the orthographic projection on the first substrate 101 Within the orthographic projection on the first substrate 101 . That is, the area of the orthographic projection of each opening 105 on the first substrate 101 is smaller than the area of the orthographic projection of one concave portion 103 corresponding to the opening 105 on the first substrate 101 .
  • the excitation light can only be irradiated to the recessed portion 103 through the opening 105 , and will not be irradiated to the area around the recessed portion 103 , so that the film in the surrounding area near the recessed portion 103 can be avoided.
  • the size of the opening 105 of the shielding layer 104 can be correspondingly designed according to the irradiation spot size of the incident excitation light, the thickness of the limiting layer 102 and the like.
  • each opening 105 and the corresponding one of the recesses 103 may be the same or different.
  • the shape of the opening 105 may be a cylinder, a truncated cone, a rectangular parallelepiped, a polygonal prism, a sphere, an ellipsoid, etc., which is not limited by the embodiment of the present disclosure.
  • the cross-sectional shape of the opening 105 in the plane parallel to the first substrate 101 may be oval, triangular, polygonal, irregular, etc., and the cross-section in the direction perpendicular to the first substrate 101 may be square, Polygons such as circles, parallelograms, trapezoids, etc.
  • the shape of the orthographic projection of each opening 105 and a corresponding one of the recesses 103 on the first substrate 101 is a circle, and the diameter of each opening 105 is in the range of 20-80 microns, and The diameter of a concave portion 103 corresponding to the opening 105 is in the range of 25-90 microns.
  • the diameter of the opening 105 is smaller than the diameter of the corresponding concave portion 103 .
  • the diameter of the corresponding recess 103 may be 25 microns; if the diameter of the opening 105 is 60 microns, the diameter of the corresponding recess 103 may be 70 microns; the diameter of the opening 105 If it is 80 micrometers, the diameter of the corresponding concave portion 103 may be 90 micrometers or the like.
  • the shape of the orthographic projection of each opening 105 on the first substrate 101 is a first regular polygon
  • the shape of the orthographic projection of one of the recesses 103 corresponding to the opening 105 on the first substrate 101 is a second regular polygon
  • the diameter of the inscribed circle of the first regular polygon is in the range of 20-80 ⁇ m
  • the diameter of the inscribed circle of the second regular polygon is in the range of 25-90 ⁇ m. It should be noted that the diameter of the inscribed circle of the first regular polygon is smaller than the diameter of the inscribed circle of the second regular polygon.
  • the diameter of the inscribed circle of the first regular polygon is 20 microns
  • the diameter of the inscribed circle of the second regular polygon may be 25 microns
  • the diameter of the inscribed circle of the first regular polygon is 60 microns
  • the diameter of the inscribed circle of the second regular polygon The diameter of the inscribed circle of the polygon may be 70 microns
  • the diameter of the inscribed circle of the first regular polygon is 80 microns
  • the diameter of the inscribed circle of the second regular polygon may be 90 microns and so on.
  • the excitation light can be irradiated to the recessed portion 103 with a high utilization rate, and only to the recessed portion as described above. portion 103 without being irradiated to the surrounding area of the recessed portion 103 .
  • the shielding layer 104 Since the shielding layer 104 is located between the first substrate 101 and the limiting layer 102 , the orthographic projection of the shielding layer 104 on the first substrate 101 must overlap with the first substrate 101 itself, that is, the shielding layer 104 At least part of the first substrate 101 is necessarily shielded. Therefore, when the excitation light is irradiated to the concave portion 103 through the opening 105 in the direction from bottom to top, the blocking layer 104 can not only block the excitation light from irradiating the confinement layer 102 , but also can block the excitation light irradiated on the first substrate 101 .
  • the light is transmitted through the blocking layer 104, thereby not only preventing the emission of undesired fluorescence from the defining layer 102, but also at least partially reducing the (possible) trace fluorescence interference generated by the first substrate 101 after being irradiated with excitation light. This further improves the fluorescence detection accuracy of the reagent in the recessed portion 103 .
  • the defining layer 102 and the shielding layer 104 may also be the same film layer structure.
  • the surface of the confinement layer 102 close to the first substrate 101 ie, the lower surface of the confinement layer 102
  • the concave portion 103 penetrates the limiting layer 102 (that is, the concave portion 103 is a structure similar to a through hole)
  • the opening at the bottom of the concave portion 103 is equivalent to the opening 105 of the shielding layer 104 ;
  • the concave portion 103 does not completely penetrate the limiting layer 102 (That is, the recessed portion 103 is a structure similar to a blind hole
  • the double-stranded structure of the DNA fragment is denatured at high temperature (eg, 90°C) to form a single-stranded structure, and at low temperature (eg, 65°C), the primer and the single-strand are combined according to the principle of base complementary pairing.
  • the optimal temperature of the enzyme for example, 72° C.
  • the array substrate 100 further includes a heating electrode 106 located between the first substrate 101 and the confinement layer 102 , and the heating electrode 106 is configured to perform heating on the plurality of concave portions 103 . heating.
  • the heating electrode 106 is located on the first substrate 101, and the heating electrode 106 can receive an electrical signal (eg, a voltage signal), so that when a current flows through the heating electrode 106, heat is generated, and the heat is conducted into the recess 103 to for the polymerase chain reaction.
  • the heating electrode 106 can be made of a conductive material with high resistivity, so that the heating electrode 106 can generate a large amount of heat when a small electrical signal is supplied to improve the energy conversion rate.
  • the heating electrode 106 can be made of, for example, a transparent conductive material, such as indium tin oxide (ITO), tin oxide, etc., or other suitable materials, such as metal, etc., which are not limited in the embodiments of the present disclosure.
  • the orthographic projections of the plurality of recesses 103 on the first substrate 101 are located within the orthographic projections of the heater electrodes 106 on the first substrate 101 .
  • the orthographic projection refers to a projection on the first substrate 101 in a direction perpendicular to the first substrate 101 .
  • the orthographic projection of the plurality of recesses 103 on the first substrate 101 is located within the orthographic projection of the heating electrode 106 on the first substrate 101 , and the above-mentioned orthographic projection of the heating electrode 106 is larger than the above-mentioned orthographic projection of the plurality of recessed portions 103 .
  • the heating electrode 106 can be made to heat each recessed portion 103 . Due to the edge heat dissipation effect of the heater electrode 106, the operating temperature at the edge of the heater electrode 106 is generally lower than that in the central region thereof.
  • the central region of the heating electrode 106 having a uniform temperature can be made to correspond to the plurality of concave portions 103 , thereby heating the plurality of concave portions 103 to avoid heating
  • the concave portion 103 is heated at the edge of the electrode 106 (for example, an area of 5 mm, 8 mm or other suitable size from the edge), so that the heating of the plurality of concave portions 103 is more uniform and the temperature uniformity is better, which is beneficial to the concave portion 103.
  • the reaction system solution in the medium performs an efficient amplification reaction.
  • FIG. 5 shows a top plan view of the array substrate 100 .
  • the heater electrode 106 includes a plurality of sub-sections separated from each other extending in a first direction X (ie, the vertical direction in the figure).
  • the figure shows five sub-sections separated from each other and insulated from each other, but the embodiments of the present disclosure are not limited thereto, and may also include more or less sub-sections separated from each other, such as two sub-sections separated from each other, Ten separate subsections, a hundred separate subsections, etc.
  • the embodiments of the present disclosure do not limit the spacing between the subsections as long as the product design requirements are met. In one example, the spacing between the various subsections of the heater electrode 106 is in the range of 1 micron to 200 microns.
  • each subsection in the heating electrode 106 By applying an electrical signal to each subsection in the heating electrode 106, for example, applying a high voltage to one end of each subsection and applying a low voltage (eg, a ground signal) to the other end of each subsection, the The separated sub-sections flow with substantially the same magnitude of current, and thus maintain substantially the same temperature, thereby further improving the temperature uniformity throughout the heating electrode 106, making the heating of the plurality of recesses 103 more uniform and the temperature uniformity better. , further promoting the amplification reaction of the reaction system solution in the recessed portion 103 .
  • the respective sub-portions of the heater electrode 105 are shown as elongated rectangles, but embodiments of the present disclosure do not limit the shape of the respective sub-portions of the heater electrode 106 , which may be any suitable shape.
  • FIG. 6 shows another possible planar shape for the various subsections of the heater electrode 106 .
  • the heating electrode 106 includes a plurality of strip-like structures extending along the first direction X and separated from each other, and the width of the middle part of each strip-like structure along the second direction Y is wider than that of the two ends of the strip-like structure Part of the width along the second direction Y, which is a direction perpendicular to the first direction X in a plane parallel to the first substrate 101 .
  • the plurality of strip structures in the heating electrode 106 are not limited to the shapes shown in the left part in FIG. 6 , as long as the strip structures are shaped such that the width of the middle part is wider than the width of both end parts.
  • the shape of the strip structure of the heating electrode 106 may also be an ellipse or a rectangle with an edge outline in the shape of a broken line.
  • the heating electrode 106 in the array substrate 100 (for example, integrating the heating electrode 106 on the first substrate 101 ), the heating of the recessed portion 103 of the array substrate 100 can be effectively achieved, thereby realizing The temperature control of the concave portion 103 does not require external heating equipment, and the integration is high.
  • the heating electrode 106 can be maintained at substantially the same temperature everywhere, thereby further improving the temperature uniformity of the heating electrode 106 and making the plurality of recesses 103 more heated. evenly.
  • the array substrate 100 can realize temperature cycling without driving the droplets, the operation is simple, and the production cost is low .
  • the array substrate 100 further includes a conductive layer 107 and a first insulating layer 110 , the conductive layer 107 is located between the first substrate 101 and the heating electrode 106 , and the first insulating layer 110 is located on the conductive layer Between 107 and the heating electrode 106 , the conductive layer 107 is electrically connected to the heating electrode 106 through the via hole 112 in the first insulating layer 110 .
  • the conductive layer 107 is configured to apply an electrical signal (eg, a voltage signal) to the heater electrode 106 . After the heating electrode 106 receives the electrical signal, it can generate heat under the action of the electrical signal, thereby heating the recessed portion 103 .
  • the first insulating layer 110 may also cover a partial area of the first substrate 101 that is not shielded by the conductive layer 107 .
  • the via hole 112 exposes a part of the conductive layer 107 , so that the heating electrode 106 can be electrically connected to the conductive layer 107 via the via hole 112 .
  • the shape of the via hole 112 may be cylindrical, truncated, or the like.
  • conductive layer 107 may be electrically connected to heater electrode 106 through one or more vias 112 .
  • the number of the conductive layers 107 may be one or more, which is not limited by the embodiment of the present disclosure.
  • a plurality of conductive layers 107 are used to apply an electrical signal to the heating electrode 106, different parts of the heating electrode 106 can receive the electrical signal at the same time, so that the current of substantially the same magnitude flows through each position of the heating electrode 106, so the heating is more uniform .
  • the first insulating layer 110 may include a plurality of via holes 112, each of which exposes a portion of the conductive layer 107, so that the heating electrode 106 passes through the plurality of via holes 112 to connect with the plurality of via holes 112.
  • the conductive layers 107 are respectively electrically connected.
  • the plurality of conductive layers 107 and the plurality of via holes 112 are in one-to-one correspondence.
  • the number of the plurality of via holes 112 may also be greater than the number of the plurality of conductive layers 107 , and each conductive layer 107 is electrically connected to the heating electrode 106 through one or more via holes 112 .
  • the heating electrode 106 and the conductive layer 107 are located in different layers. In some other embodiments, the heating electrode 106 and the conductive layer 107 may also be located on the same layer. In this case, the first insulating layer 110 may be omitted from the array substrate 100, and the heating electrode 106 and the conductive layer 107 are electrically connected by overlapping.
  • the resistance value of the heating electrode 106 is greater than the resistance value of the conductive layer 107 , so that under the action of the same electrical signal, the heating electrode 106 generates more heat to heat the concave portion 103 .
  • the conductive layer 107 generates less heat, thereby reducing energy loss.
  • the conductive layer 107 can be made of a material with lower resistivity, thereby reducing the energy loss on the conductive layer 107 .
  • the conductive layer 107 may be prepared by using a metal material, for example, the metal material may be copper or copper alloy, aluminum or aluminum alloy, etc., and may be a single metal layer or a composite metal layer, which is not limited in the embodiments of the present disclosure.
  • the heating electrode 106 is made of indium tin oxide (ITO) or tin oxide
  • the conductive layer 107 is made of a metal material. Since ITO is not easily oxidized, partial oxidation of the heating electrode 106 exposed to the air can be prevented, thereby avoiding problems such as uneven heating or increased power consumption caused by the oxidation of the heating electrode 106 .
  • the conductive layer 107 is covered by the first insulating layer 110, so even if it is made of metal material, the problem of oxidation is not easy to occur.
  • the vias 112 in the first insulating layer 110 include a first plurality of vias 112a and a second plurality of vias 112b.
  • the first group of via holes 112 a and the second group of via holes 112 b are located on opposite sides of the array substrate 100 , respectively.
  • Conductive layer 107 includes a first set of conductive layers 1071 and a second set of conductive layers 1072 .
  • the first group of conductive layers 1071 is located on the same side as the first group of vias 112a.
  • the first group of conductive layers 1071 are electrically connected to the heater electrodes 106 through the first group of vias 112a.
  • the orthographic projection of the second set of conductive layers 1072 on the first substrate 101 falls on the periphery of the orthographic projection of the heater electrode 106 on the first substrate 101 , and the second set of conductive layers 1072 at least partially surrounds the heater electrode 106 .
  • the second set of conductive layers 1072 are electrically connected to the heater electrodes 106 through the second set of vias 112b.
  • the conductive layer 107 can at least partially surround the heating electrode 106 , the heat loss of the heating electrode 106 can be reduced, the temperature of each recess 103 can be more uniform, and the heating efficiency of the heating electrode 106 can be improved, thereby reducing the power consumption. consumption.
  • a high voltage signal is applied to the heating electrode through one conductive layer
  • a low voltage signal (such as a ground voltage) is applied to the heating electrode through another conductive layer, so as to form, for example, along the first conductive layer on the heating electrode.
  • the current path in one direction makes the heating electrode generate heat. Since the heating electrode itself has a large resistance value, a large voltage drop will be generated in the direction extending from the connection between the heating electrode and the conductive layer in the second direction perpendicular to the first direction, so that the heating electrode can be divided into The first partial electrodes and the second partial electrodes distributed in the second direction.
  • the voltage signal received by the first partial electrode is relatively large.
  • the first partial electrode is, for example, the electrode part at the connection between the heating electrode and the conductive layer.
  • the voltage signal received by the second partial electrode is relatively small. Electrode part at the connection.
  • the current in the heating electrode is not uniform, the current in the first partial electrode is large and the heat generated is large, and the current in the second partial electrode is small and the heat generated is small. Therefore, when such a heating electrode is used to heat the depressions in the array substrate, the depressions at different positions reach different temperatures, which ultimately affects the amplification reaction of the reaction system solution in the depressions and affects the accuracy of the detection effect. sex.
  • the first group of the plurality of conductive layers 1071 applies the first voltage signal (eg, a high voltage signal) to the heating electrode 106 through the first group of via holes 112a
  • the second Two sets of multiple conductive layers 1072 apply a second voltage signal (eg, a ground signal) to the heater electrode 106 via the second set of vias 112b to form a current path on the heater electrode 106 .
  • each set containing a plurality of conductive layers, and dividing the heater electrode 106 into a plurality of subsections separated from each other in conjunction with the previously described division of the heater electrode 106 one end of each subsection of the heater electrode 106 (near the first One end of one group of via holes 112a) is simultaneously applied with the same first voltage signal, and the other end of each sub-section of the heating electrode 106 (one end close to the second group of via holes 112b) is simultaneously applied with the same second voltage signal, thereby
  • the heating electrode 106 forms a uniform current and generates uniform heat, so that the depressions 103 at each position reach a uniform temperature, promote the amplification reaction of the reaction system solution in the depressions 103, and improve the accuracy of the detection effect.
  • the array substrate 100 may further include a contact portion 113 (as shown in FIG. 5 , for example, Pad area), the contact portion 113 is not covered by the first insulating layer 110 .
  • the contact portion 113 is in the shape of a square with a larger size, so that it can be conveniently connected to a probe or an electrode in an external device, and has a large contact area and can receive electrical signals stably. In this way, the array substrate 100 can be plug-and-play, simple to operate, and convenient to use.
  • the contact portion 113 may be located on the same layer as the conductive layer 107 and formed by a single patterning process.
  • the contact portion 113 may be subjected to electroplating, thermal spraying or vacuum plating, etc., so as to form a metal protective layer on the surface of the contact portion 113 to prevent the contact portion 113 from being oxidized without affecting its Conductive properties.
  • the array substrate 100 includes a reaction area 1001 and a peripheral area 1002 , and the peripheral area 1002 at least partially surrounds the reaction area 1001 .
  • the peripheral region 1002 in the first direction X, includes a first sub-region 1002 a and a second sub-region 1002 b located on both sides of the reaction region 1001 , respectively.
  • the peripheral area 1002 completely surrounds the reaction area 1001 , that is, the peripheral area 1002 is annular and surrounds the reaction area 1001 .
  • the peripheral area 1002 in the first direction X, includes a first sub-area 1002a and a second sub-area 1002b located on both sides of the reaction area 1001, respectively, and in the second direction Y, the peripheral area 1002 further includes The third sub-region and the fourth sub-region on both sides of the reaction region 1001, the first sub-region 1002a is connected with the third sub-region and the fourth sub-region, and the second sub-region 1002b is connected with the third sub-region and the fourth sub-region are also connected so that the perimeter region 1002 surrounds the reaction region 1001 .
  • the via 112 is located in the peripheral region 1002 and the heater electrode 106 is located at least partially in the reaction region 1001 .
  • the reaction area 1001 further includes a functional area 1001a, and the depression 103 is located in the functional area 1001a.
  • the orthographic projection of the heating electrode 106 on the first substrate 101 completely covers the functional region 1001a of the reaction region 1001, that is, the functional region 1001a is located within the orthographic projection of the heating electrode 106 on the first substrate 101, thereby ensuring that The heating electrode 106 can heat each recessed portion 103 .
  • the peripheral region 1002 when in the second direction Y, the peripheral region 1002 further includes a third sub-region and a fourth sub-region located on both sides of the reaction region 1001, the third sub-region and the fourth sub-region also include the third sub-region and the fourth sub-region.
  • a plurality of conductive layers 107 may be provided. The embodiments of the present disclosure do not limit the number, arrangement position, and the like of the conductive layers 107 .
  • the array substrate 100 may further include a hydrophilic layer 108 , the hydrophilic layer 108 covering at least the sidewall of each recessed portion 103 .
  • the hydrophilic layer 108 covers the sidewalls of each recess 103 .
  • the hydrophilic layer 108 covers not only the sidewall of each recess 103 , but also the surface of the defining layer 102 remote from the first substrate 101 and the bottom of each recess 103 .
  • the hydrophilic layer 108 covers the sidewall of the concave portion 103 .
  • the hydrophilic layer 108 covers the sidewalls and the bottom of the concave portion 103 .
  • the hydrophilic layer 108 has hydrophilic and oleophobic properties.
  • the sidewall (and bottom) of the depression 103 is provided with the hydrophilic layer 108 , the hydrophilicity of the depression 103 is greatly improved, and the contact angle between the droplets in the reaction system solution and the surface of the depression 103 is small. Under the condition that no driving force is applied to the reaction system solution from the outside, the reaction system solution can automatically and gradually enter each recessed portion 103 based on the capillary phenomenon, so as to realize automatic sample injection and avoid cross-liquid flow.
  • the material of the hydrophilic layer 108 is silicon oxide, such as silicon dioxide (SiO 2 ).
  • the hydrophilic layer 108 may also be prepared by using other suitable inorganic or organic materials, as long as the surface of the hydrophilic layer 108 away from the limiting layer 102 is guaranteed to be hydrophilic.
  • the hydrophilic layer 108 may be directly fabricated using hydrophilic materials.
  • the hydrophilic layer 108 may be made of a material without hydrophilicity.
  • a hydrophilic treatment needs to be performed on the surface of the hydrophilic layer 108 away from the defining layer 102, so that the The surface of the hydrophilic layer 108 remote from the defining layer 102 is hydrophilic.
  • a non-hydrophilic material such as silicon nitride, etc.
  • the non-hydrophilic material can be subjected to a hydrophilic treatment, for example, a gelation modification method, an ultraviolet radiation method, a plasma method, so as to make the surface of the non-hydrophilic material have hydrophilic groups, so as to have hydrophilicity.
  • the array substrate 100 may further include a first hydrophobic layer 109 on the side of the hydrophilic layer 108 away from the first substrate 101 , a part of the hydrophilic layer 108 (that is, a part of the hydrophilic layer 108 )
  • the portion covering the confinement layer 102 away from the surface of the first substrate 101 ) is located between the first hydrophobic layer 109 and the confinement layer 102 .
  • the first hydrophobic layer 109 covers the surface of the hydrophilic layer 108 located on the defining layer 102 away from the first substrate 101 and extends to the junction of the surface with the sidewall of the recess 103 so that the first hydrophobic layer 109 A plurality of holes 114 are defined.
  • the plurality of recesses 103 defined by the defining layer 102, the plurality of openings 105 defined by the blocking layer 104, and the plurality of holes 114 defined by the first hydrophobic layer 109 are in one-to-one correspondence, and each hole 114 is in the first liner
  • the first orthographic projection on the bottom 101 and the third orthographic projection of an opening 105 corresponding to the hole 114 on the first substrate 101 are both located on the first substrate 101 of a recess 103 corresponding to the hole 114 .
  • the first orthographic projection is located between the second orthographic projection and the third orthographic projection
  • the third orthographic projection is located in the third orthographic projection.
  • a concentric ring pattern as shown on the right side of Figure 5 is formed. That is, the size of the circular opening 105 defined by the shielding layer 104 is the smallest, the size of the circular recess 103 defined by the limiting layer 102 is the largest, and the size of the circular hole 114 defined by the first hydrophobic layer 109 is in between.
  • the concave portion 103 , the opening 105 and the hole 114 are not limited to form concentric circular rings, they can also form concentric rectangular rings, concentric square rings, concentric elliptical rings, concentric polygon rings and the like.
  • the first hydrophobic layer 109 has hydrophobic and oleophilic properties, and the material of the first hydrophobic layer 109 is resin or silicon nitride, for example, a commercially available epoxy resin with a model number of DL-1001C.
  • the first hydrophobic layer 109 can also be made of other suitable inorganic or organic materials, as long as the first hydrophobic layer 109 is guaranteed to have hydrophobicity.
  • the first hydrophobic layer 109 may be directly prepared using a hydrophobic material.
  • the first hydrophobic layer 109 may be made of a material that does not have hydrophobicity. In this case, the surface of the first hydrophobic layer 109 needs to be hydrophobicized to make the first hydrophobic layer The surface of 109 is hydrophobic.
  • the hydrophilic layer 108 and the first hydrophobic layer 109 can jointly adjust the surface contact angle of the droplets of the reaction system solution, so that the microfluidic device including the array substrate 100 can realize self-priming liquid injection and oil seal.
  • the first hydrophobic layer 109 is provided to improve the hydrophobicity of the outside of the recessed portion 103
  • the hydrophilic layer 108 is provided to improve the interior of the recessed portion 103 (the sidewall (and bottom) of the recessed portion 103). Therefore, under the joint action of the hydrophilic layer 108 and the first hydrophobic layer 109, the reaction system solution is easier to enter each Recessed portion 103 .
  • the ratio of the area of the first hydrophobic layer 109 to the area of the hydrophilic layer 108 is between 0.01 and 2.00.
  • the ratio of the area of the first hydrophobic layer 109 to the area of the hydrophilic layer 108 may be 0.01, 0.05, 0.10, 0.50, 1.00, 1.20, 1.40, 1.60, 1.80, 2.00, and the like. If the area of the first hydrophobic layer 109 is too large and the area of the hydrophilic layer 108 is too small, the reaction system solution injected into the microfluidic device from the outside is easy to adhere to the surface of the first hydrophobic layer 109 and is difficult to enter to the recessed portion 103 .
  • the first hydrophobic layer 109 and the hydrophilic layer 108 have a suitable area ratio, under the joint action of the hydrophilic layer 108 and the first hydrophobic layer 109, it is beneficial to make the reaction system solution easier Therefore, the waste of the reaction system solution can be avoided, the utilization rate can be improved, the fluorescence emission intensity of the reagent to be detected in each recessed part 103 can be improved, and the fluorescence detection accuracy of the reagent to be detected can be improved.
  • the array substrate 100 may further include a second insulating layer 111 located between the heating electrode 106 and the shielding layer 104 .
  • the second insulating layer 111 is used to protect the heating electrode 106, provide insulation, prevent liquid from eroding the heating electrode 106, slow down the aging of the heating electrode 106, and can play a role of planarization.
  • the bottom of the recessed portion 103 exposes part of the surface of the second insulating layer 111
  • the hydrophilic layer 108 covers the sidewall of the recessed portion 103 and the exposed surface of the second insulating layer 111 .
  • the first insulating layer 110 and the second insulating layer 111 may be made of the same insulating material, for example, an inorganic insulating material or an organic insulating material.
  • the materials of the first insulating layer 110 and the second insulating layer 111 include silicon dioxide, silicon nitride, or the like.
  • the blocking layer 104 is shown between the defining layer 102 and the second insulating layer 111 in the figure, this is only an example. As previously described, the blocking layer 104 may be located in any film layer between the first substrate 101 and the defining layer 102 or at other locations as described later. For example, the blocking layer 104 may be located between the first substrate 101 and the conductive layer 107, between the conductive layer 107 and the first insulating layer 110, between the first insulating layer 110 and the heater electrode 106, between the heater electrode 106 and the second insulating layer between layers 111, etc.
  • the shielding layer 104 by disposing the shielding layer 104 having the opening 105, the shielding layer 104 at least partially shields the first substrate 101 and the defining layer 102, thereby avoiding or at least reducing the defining layer 102 and the first lining
  • the background fluorescence interference caused by the bottom 101 improves the fluorescence detection accuracy of the reagent to be detected in the recessed part 103; by arranging the heating electrode 106 with a plurality of separated sub-sections, and optimizing the arrangement of the conductive layer 107, the heating is improved.
  • the temperature uniformity of the electrode 106 is beneficial to the amplification reaction of the reaction system solution in the recessed part 103; by setting the hydrophilic layer 108 and the first hydrophobic layer 109, the reaction system solution is easier to enter each recessed part 103, thereby Improve reaction efficiency and avoid liquid string.
  • FIG. 7 shows a partial cross-sectional view of an array substrate 200 provided according to another embodiment of the present disclosure.
  • the array substrate 200 is basically the same as the array substrate 100 shown in FIG. 1 and FIG. 2 except that the shielding layer 104 is disposed and the third insulating layer 115 is further included.
  • the shielding layer 104 and the third insulating layer 115 in the array substrate 200 are described below. For other structures and corresponding technical effects, reference may be made to the array substrate 100 shown in FIG. 1 and FIG. 2 , which will not be repeated here.
  • the blocking layer 104 is located on the side of the first substrate 101 away from the limiting layer 102 , that is, on the backside of the first substrate 101 .
  • the blocking layer 104 defines at least one opening 105, the orthographic projection of the at least one opening 105 on the first substrate 101 at least partially overlaps the orthographic projection of the at least one recess 103 on the first substrate 101, and the blocking layer 104 is in the first substrate 101.
  • the orthographic projection on the first substrate 101 at least partially overlaps the orthographic projection of the defining layer 102 on the first substrate 101 .
  • the shielding layer 104 actually defines a plurality of openings 105
  • the defining layer 102 defines a plurality of recesses 103 , each opening 105 corresponding to each recess 103 .
  • the shape of the orthographic projection of each opening 105 on the first substrate 101 is a circle
  • the shape of the orthographic projection of each recess 103 on the first substrate 101 is also a circle
  • the shape of the orthographic projection of each opening 105 on the first substrate 101 is also a circle.
  • the diameter is smaller than that of the corresponding one of the concave portions 103 .
  • the excitation light may be incident into the concave portion 103 from one side of the first substrate 101 through the opening 105 of the shielding layer 104 .
  • the shielding layer 104 is provided on the side of the first substrate 101 away from the limiting layer 102 , the arrangement of the shielding layer 104 is no longer limited by other film layers in the array substrate 200 , and the shielding layer 104 can occupy a larger area, which is beneficial to Make the blocking layer 104 block a larger part of the first substrate 101 and the limiting layer 102 or completely block the first substrate 101 and the limiting layer 102, thereby further reducing or even avoiding the background fluorescence generated by the limiting layer 102 and the first substrate 101, The fluorescence detection accuracy of the reagent to be detected in the recessed portion 103 is improved.
  • the array substrate 200 further includes a third insulating layer 115 located on the side of the shielding layer 104 away from the first substrate 101 , and the third insulating layer 115 covers the shielding layer 104 to provide protection for the shielding layer 104 from avoiding affected by the external environment.
  • the figure shows that the third insulating layer 115 is a continuous film layer and completely fills the opening 105 of the shielding layer 104 .
  • the third insulating layer 115 is disconnected at positions corresponding to the openings 105 , and a film layer of the same material as the third insulating layer 115 fills the openings 105 of the shielding layer 104 .
  • the third insulating layer 115 is also a continuous film layer, but does not fill the opening 105 of the blocking layer 104 .
  • the first insulating layer 110 , the second insulating layer 111 and the third insulating layer 115 can be made of the same insulating material, for example, an inorganic insulating material or an organic insulating material.
  • the materials of the first insulating layer 110 , the second insulating layer 111 and the third insulating layer 115 include silicon dioxide, silicon nitride, or the like.
  • FIG. 8 shows a partial cross-sectional view of an array substrate 300 provided according to yet another embodiment of the present disclosure.
  • the array substrate 300 is basically the same as the array substrate 100 shown in FIGS. 1 and 2 except for the arrangement of the blocking layer 104 and the hydrophilic layer 108 .
  • the shielding layer 104 and the hydrophilic layer 108 in the array substrate 300 will be described below.
  • the blocking layer 104 includes a first portion 104a on the side of the defining layer 102 remote from the first substrate 101 and attached to the side of the defining layer 102 and the surface remote from the first substrate 101 .
  • a term such as "A is attached to B" herein means that the surfaces of A and B are in direct contact.
  • the first portion 104a of the blocking layer 104 is in direct contact with the sides of the defining layer 102 and the surface remote from the first substrate 101 and at least partially surrounds the defining layer 102 .
  • the first portion 104a of the blocking layer 104 defines a plurality of openings 105 , the orthographic projection of each opening 105 on the first substrate 101 at least partially overlaps the orthographic projection of a corresponding one of the recesses 103 on the first substrate 101 .
  • the shape of the orthographic projection of each opening 105 on the first substrate 101 is a circle
  • the shape of the orthographic projection of each recess 103 on the first substrate 101 is also a circle
  • the shape of the orthographic projection of each opening 105 on the first substrate 101 is also a circle.
  • the diameter is smaller than that of the corresponding one of the concave portions 103 .
  • the excitation light can be directly irradiated from above the array substrate 300 through the opening 105 of the shielding layer 104 to the reagent to be detected in the concave portion 103 (that is, from top to bottom in the figure). direction), so that the utilization rate of the light source can be improved, and the fluorescence emission intensity of the reagent to be detected can be improved.
  • the side surfaces of the defining layer 102 and the surface away from the first substrate 101 are completely shielded by the first portion 104a of the shielding layer 104, and thus will not be irradiated by the excitation light.
  • the defining layer 102 and the first portion 104a of the shielding layer 104 may also be the same a membrane structure.
  • the defining layer 102 and the first portion 104a of the blocking layer 104 are the same film layer structure, for example, by physically or chemically treating the side surface of the defining layer 102 and the surface (ie, the upper surface) remote from the first substrate 101 , making it opaque, so that the side and top surfaces of the defining layer 102 act as the first portion 104a of the shielding layer 104 ;
  • the hydrophilic layer 108 is disposed on the surface of the first portion 104a of the shielding layer 104 away from the first substrate 101 and covers the surface of the first portion 104a of the shielding layer 104 and at least the sidewall of each recess 103 .
  • the hydrophilic layer 108 has hydrophilic and oleophobic properties. Since the hydrophilic layer 108 covers at least the sidewall of the recessed portion 103, the hydrophilicity of the recessed portion 103 can be improved, and the reaction system solution can automatically and gradually enter based on the capillary phenomenon when no driving force is applied to the reaction system solution from the outside. Inside each concave part 103, so as to realize automatic sample injection, and can avoid liquid string.
  • FIG. 9 shows a partial cross-sectional view of an array substrate 400 provided according to still another embodiment of the present disclosure.
  • the array substrate 400 is basically the same as the array substrate 100 shown in FIGS. 1 and 2 except for the arrangement of the blocking layer 104 and the hydrophilic layer 108 .
  • the shielding layer 104 and the hydrophilic layer 108 in the array substrate 400 are described below. For other structures and corresponding technical effects, reference may be made to the array substrate 100 shown in FIG. 1 and FIG. 2 , which will not be repeated here.
  • the blocking layer 104 includes a first portion 104a and a second portion 104b.
  • the first portion 104a is located on the side of the confinement layer 102 away from the first substrate 101, and is attached to the side of the confinement layer 102 and on the surface away from the first substrate 101;
  • the second portion 104b is located between the second insulating layer 111 and the confinement layer 102 and attached to the surface (ie, the bottom surface) of the defining layer 102 close to the first substrate 101 .
  • the first portion 104a and the second portion 104b together surround the defining layer 102 .
  • the first portion 104a of the shielding layer 104 defines a plurality of openings 105, and the orthographic projection of each opening 105 on the first substrate 101 at least partially overlaps the orthographic projection of a corresponding one of the recesses 103 on the first substrate 101; the shielding layer 104
  • the second portion 104b of the first substrate 104 defines a plurality of openings 105, the orthographic projection of each opening 105 on the first substrate 101 at least partially overlaps the orthographic projection of the corresponding one of the recesses 103 on the first substrate 101.
  • the excitation light can be directly irradiated from above the array substrate 300 to the reagent to be detected in the concave portion 103 through the opening 105 of the first part 104a of the shielding layer 104 (that is, in the figure direction from top to bottom), the recessed portion 103 can also be irradiated from below the array substrate 300 through the opening 105 of the second part 104b of the shielding layer 104 (ie, the direction from bottom to top in the figure), so that it can be flexibly arranged as required
  • the location of the light source emitting the excitation light Since all surfaces (upper surface, lower surface, and each side surface) of the defining layer 102 are completely shielded by the shielding layer 104, they are not irradiated by the excitation light.
  • the orthographic projection of the opening 105 defined by the first portion 104a of the shielding layer 104 on the first substrate 101 is completely the same as the orthographic projection of the opening 105 defined by the second portion 104b of the shielding layer 104 on the first substrate 101 overlapping.
  • the shape of the orthographic projection of the opening 105 defined by the first portion 104 a of the shielding layer 104 on the first substrate 101 is a circle, and the opening 105 defined by the second portion 104 b of the shielding layer 104 on the first substrate 101 has a circular shape.
  • the shape of the orthographic projection is also circular, and the openings defined by the first portion 104a and the second portion 104b are identical in size.
  • the shape of the orthographic projection of the recessed portion 103 on the first substrate 101 is a circle
  • the shape of the orthographic projection of the opening 105 defined by the first portion 104a of the shielding layer 104 on the first substrate 101 is a circle
  • the shape of the orthographic projection of the opening 105 defined by the second portion 104b of the shielding layer 104 on the first substrate 101 is also circular, and the openings defined by the first portion 104a and the second portion 104b have the same size and are both smaller than the recess. size of part 103.
  • the above embodiments are described with the defining layer 102 and the first part 104a and the second part 104b of the shielding layer 104 as independent film layer structures, as mentioned above, the defining layer 102 and the first part 104a and the second part 104b of the shielding layer 104
  • the second part 104b can also be of the same film layer structure.
  • the defining layer 102 and the first portion 104a and the second portion 104b of the shielding layer 104 are the same film layer structure, for example, by aligning the side surface of the defining layer 102 and the surface away from the first substrate 101 (ie, the upper surface) and the surface near the first substrate 101 (ie, the lower surface) is physically or chemically treated to make it opaque, so that the side, upper and lower surfaces of the defining layer 102 (ie, all the outer surfaces of the defining layer 102) act as The first portion 104a and the second portion 104b of the shielding layer 104 ; and the remaining untreated portion of the defining layer 102 (eg, the inner portion of the defining layer 102 wrapped by the outer surface) continues to function as the defining layer 102 .
  • the hydrophilic layer 108 is disposed on the surface of the first portion 104a of the shielding layer 104 away from the first substrate 101 and covers the surface of the first portion 104a of the shielding layer 104 and at least the sidewall of each recess 103 .
  • the hydrophilic layer 108 has hydrophilic and oleophobic properties. Since the hydrophilic layer 108 covers at least the sidewall of the recessed portion 103, the hydrophilicity of the recessed portion 103 can be improved, and the reaction system solution can automatically and gradually enter based on the capillary phenomenon when no driving force is applied to the reaction system solution from the outside. Inside each concave part 103, so as to realize automatic sample injection, and can avoid liquid string.
  • a microfluidic device includes the array substrate described in any of the foregoing embodiments.
  • the following description will be made by taking the microfluidic device including the array substrate 100 as an example.
  • the array substrate provided herein can be used not only in the field of microfluidics, but also in any other appropriate fields, such as the field of display, the field of automobiles, and the like.
  • FIG. 10 shows a microfluidic device 500 including an array substrate 100 , a counter substrate 2000 that is assembled with the array substrate 100 , and a space between the array substrate 100 and the counter substrate 2000 .
  • the opposite substrate 2000 includes a second substrate 201 and a second hydrophobic layer 202 , and the second hydrophobic layer 202 is located on the side of the second substrate 201 close to the first substrate 101 .
  • the opposite substrate 2000 includes at least one through hole penetrating the second substrate 201 and the second hydrophobic layer 202 .
  • the dimensions of the microfluidic device 500 are 1.5 cm by 1.5 cm.
  • both the first substrate 101 and the second substrate 201 are glass substrates.
  • the second substrate 201 is disposed opposite to the first substrate 101 to protect, support, isolate and so on.
  • the microfluidic device 500 is prepared by using a glass-based microfabrication method combined with a semiconductor process, so that large-scale mass production can be realized, and corresponding production costs can be greatly reduced.
  • the first substrate 101 and the second substrate 201 may also use other suitable materials, which are not limited in the embodiments of the present disclosure.
  • the shape of the first substrate 101 and the shape of the second substrate 201 are both rectangular.
  • the size of the first substrate 101 is 3.2 cm*4.5 cm
  • the size of the second substrate 201 is 3.2 cm*3 cm.
  • the size of the second substrate 201 is smaller than the size of the first substrate 101
  • the second substrate 201 covers the reaction region 1001
  • an orthographic projection of the second substrate 201 on the first substrate 101 The reaction area 1001 can be completely overlapped.
  • the embodiments of the present disclosure are not limited thereto, and in some other examples, the size of the second substrate 201 may also be the same as the size of the first substrate 101.
  • the second substrate 201 covers the reaction area 1001 and surrounding area 1002.
  • the orthographic projection of the second substrate 201 on the first substrate 101 may completely coincide with the first substrate 101 .
  • the second hydrophobic layer 202 has hydrophobic and oleophilic properties, and is located on the side of the second substrate 201 facing the first substrate 101 . By disposing the second hydrophobic layer 202 , the reaction system solution can more easily enter each of the recesses 103 .
  • the material of the second hydrophobic layer 202 includes SiN x .
  • the second hydrophobic layer 202 is a light absorption layer, and the material of the light absorption layer includes at least one of TiO 2 and TiON.
  • the second hydrophobic layer 202 as a light absorbing layer, some unused excitation light can be further absorbed, so as to prevent the excitation light from being irradiated on the first substrate 101 and/or the limiting layer 102 in a certain way, thereby Fluorescence interference of the first substrate 101 and/or the defining layer 102 can be further reduced.
  • the opposite substrate 2000 includes at least one through hole penetrating the second substrate 201 and the second hydrophobic layer 202 . As shown in the figure, the opposite substrate 2000 includes a sample inlet hole 203 and a sample outlet hole 205 , and the sample inlet hole 203 and the sample outlet hole 205 both penetrate through the second substrate 201 and the second hydrophobic layer 202 .
  • the reaction system solution can be injected into the injection hole 203 through a micro-syringe pump or through a pipette, and then enter into each depression 103 through self-suction. In some embodiments, referring to FIG.
  • the reaction area 1001 further includes a non-functional area 1001b, and the sample injection hole 203 and the sample outlet hole 205 are both located in the non-functional area 1001b, and are located on different sides of the functional area 1001a, such as symmetrically distributed on the functional area 1001a. Different sides of area 1001a. As shown in FIG. 5 , in the first direction X, the sample inlet hole 203 and the sample outlet hole 205 are respectively located on two sides of the functional area 1001a.
  • the sample inlet holes 203 and the sample outlet holes 205 are symmetrically distributed with respect to the second direction Y, so that the flow of the reaction system solution in the microfluidic device 500 can be more uniform, and it is convenient for the reaction system solution to enter each depression 103 .
  • the embodiment of the present disclosure is not limited thereto, and the sample inlet holes 203 and the sample outlet holes 205 may also be symmetrically distributed with respect to the first direction X or any other direction. It should be noted that, the sample inlet hole 203 and the sample outlet hole 205 may both be located in the functional area 1001a.
  • the microfluidic device 500 further includes a plurality of sealants 204 .
  • a plurality of sealants 204 are disposed in the peripheral region 1002 and located between the array substrate 100 and the opposite substrate 2000 .
  • the plurality of sealants 204 are configured to maintain the space between the array substrate 100 and the opposite substrate 2000 to provide space for the flow of the reaction system solution.
  • a part of the frame sealant 204 may also be disposed in the reaction area 1001 , for example, distributed in multiple places in the reaction area 1001 , so as to improve the compressive strength of the microfluidic device 500 and prevent the reaction area 1001 from being damaged by external forces.
  • the microfluidic device 500 is damaged.
  • the size and shape of the plurality of sealants 204 may be the same as each other, thereby improving the thickness uniformity of the microfluidic device 500 .
  • the size and shape of the plurality of sealants 204 can also be set according to the possible force of the microfluidic device 500 . The size of the sealant 204 is larger, while the size of the frame sealant 204 is smaller in the remaining positions.
  • the height of the sealant 204 is greater than the height of the confinement layer 102 , and the first substrate 101 , the confinement layer 102 and the sealant 204 jointly define the reaction system solution
  • the sample inlet and outlet channels are provided to ensure that the reaction system solution can move to each recess 103 , and the reaction system solution that does not enter the recess 103 can flow out of the space between the array substrate 100 and the opposite substrate 2000 .
  • the height of the frame sealant 204 is 30% or 50% greater than the height of the defining layer 102 , and the specific proportional relationship between the two may be determined according to actual requirements, which is not limited in the embodiments of the present disclosure.
  • the material of the sealant 204 may be a curable organic material, such as a heat-curable material or a light-curable material, such as an ultraviolet (UV) hardening acrylic resin or other suitable materials.
  • the shape of the frame sealant 204 may be spherical. In this case, the array substrate 100 and the opposite substrate 2000 may be cured and packaged by the frame sealant 204 , so that the array substrate 100 and the opposite substrate 2000 are boxed together. In this way, the sealant 204 can control the distance between the array substrate 100 and the opposite substrate 2000 .
  • the shape of the frame sealant 204 may also be any suitable shape such as a columnar shape, an ellipsoid shape, or the like.
  • the microfluidic device 500 may further include a first temperature sensor (not shown in the figure).
  • the first temperature sensor is disposed on a side of the first substrate 101 away from the second substrate 201 and is located in the reaction region 1001 .
  • the first temperature sensor is configured to detect the temperature of the reaction region 1001 .
  • the temperature at the reaction area 1001 needs to be kept at a predetermined temperature (such as 95° C., 55° C.
  • the first temperature sensor can detect the temperature at the reaction area 1001 in real time, and then adjust the temperature in real time through the heating electrode 106
  • the temperature at the reaction area 1001 keeps the temperature of the reaction area 1001 at a predetermined temperature, so as to prevent the temperature of the reaction area 1001 from being too high or too low to affect the amplification reaction.
  • the first temperature sensor may be various types of temperature sensors, including but not limited to contact temperature sensors or non-contact temperature sensors, such as thermocouple temperature sensors or infrared temperature sensors.
  • microfluidic device 500 provided by the embodiments of the present disclosure may have substantially the same technical effects as the array substrates described in the previous embodiments. Therefore, for the sake of brevity, repeated descriptions are not repeated here.
  • a microfluidic system including a control device and the microfluidic device 500 described in any of the preceding embodiments.
  • the control device is electrically connected to the microfluidic device 500 and is configured to control the temperature of the microfluidic device 500 .
  • the microfluidic system is helpful for making droplets automatically enter each recessed part 103 of the microfluidic device 500 , which can realize effective sample injection and avoid liquid crossover, and can effectively realize the temperature control of the recessed part 103 of the microfluidic device 500 .
  • the temperature cycle can be realized without the driving operation of the droplet, and the external heating equipment is not required, and the integration is high, the operation is simple, and the production cost is low.
  • FIG. 11 shows a schematic block diagram of a microfluidic system 600 provided according to an embodiment of the present disclosure.
  • the microfluidic system 600 includes a microfluidic device 500 , a control device 620 , and a power supply device 630 .
  • the power supply device 630 provides a signal voltage or a driving voltage to the microfluidic device 500 and the control device 620 .
  • the control device 620 is electrically connected to the microfluidic device 500 and is configured to apply an electrical signal to the microfluidic device 500 to drive the heating electrode 106 of the microfluidic device 500 .
  • the plurality of recesses 103 of the microfluidic device 500 can accommodate the reaction system solution.
  • the control device 620 applies an electrical signal to the heating electrode 106 of the microfluidic device 500, so that the heating electrode 106 releases heat, thereby controlling the temperature of the functional area of the microfluidic device 500, so that the reaction system solution performs an amplification reaction.
  • the control device 620 may be implemented as general-purpose or special-purpose hardware, software or firmware, etc., and may also include, for example, a central processing unit (CPU), an embedded processor, a programmable logic controller (PLC), etc., embodiments of the present disclosure There is no restriction on this.
  • the microfluidic system 600 may optionally also include a second temperature sensor 650 .
  • a second temperature sensor 650 needs to be provided in the microfluidic system 600, and the second temperature sensor 650 needs to be provided in the microfluidic device 500.
  • the position of the first temperature sensor is basically the same, so as to realize the function of detecting temperature.
  • the second temperature sensor 650 is disposed on the side of the first substrate 101 of the microfluidic device 500 away from the second substrate 201, and is located in the reaction region 1001 of the array substrate 100, the second temperature sensor 650 is configured to detect The temperature of the reaction zone 1001 of the microfluidic device 500.
  • the second temperature sensor 650 may be various types of temperature sensors, including but not limited to contact temperature sensors or non-contact temperature sensors, such as thermocouple temperature sensors or infrared temperature sensors. It should be noted that, in some other embodiments, when the microfluidic device 500 includes the first temperature sensor, the microfluidic system 600 including the microfluidic device 500 does not need to provide the second temperature sensor 650 .
  • the microfluidic system 600 may also include an optical unit 640 configured to perform optical detection of the microfluidic device 500 .
  • the optical unit 640 includes a fluorescence detection device configured to perform fluorescence detection on the reagents to be detected in the plurality of recesses 103 .
  • the fluorescence detection device may include a fluorescence light source and an image sensor (eg, a charge coupled device (CCD) image sensor).
  • the optical unit 640 may further include an image processing device, and the image processing device is configured to process the detection picture output by the fluorescence detection device.
  • the image processing apparatus may include a central processing unit (CPU) or a graphics processing unit (GPU), or the like.
  • the control device 620 is further configured to control the fluorescence detection device and the image processing device to perform corresponding functions.
  • microfluidic system 600 The working principle and process of the microfluidic system 600 are described as follows.
  • the reaction system solution may include a cell lysate, a sample solution of DNA fragments fragmented by a DNA lyase, and a PCR amplification reagent.
  • the DNA to be detected is the epidermal growth factor receptor (EGFR) gene exon 19, and accordingly, the PCR amplification reagent includes EGFR gene exon 19 specific PCR amplification primers.
  • EGFR epidermal growth factor receptor
  • the volume of the reaction system solution is 20 ⁇ l
  • the reaction system solution includes 10 ⁇ l of MIX reagent (MIX reagent includes Taq enzyme, dNPTs and MgCl2), 0.6 ⁇ l of upstream primer (10 millimolar (mM)), downstream primer 0.6 microliters (10 mM), 7.8 microliters of water, and 1 microliter of sufficiently diluted template deoxyribonucleic acid (DNA) to ensure that the number of template DNA in each microreaction chamber is less than or equal to 1.
  • MIX reagent includes Taq enzyme, dNPTs and MgCl2
  • upstream primer (10 millimolar (mM)
  • downstream primer 0.6 microliters (10 mM)
  • 7.8 microliters of water 7.8 microliters of water
  • DNA template deoxyribonucleic acid
  • a polytetrafluoroethylene joint and a silicone tube are installed in the injection hole 203 of the microfluidic device 500, and the above-configured reaction system solution is injected into the injection hole 203 through a micro-syringe pump or a pipette, and the reaction system
  • the solution enters the injection hole 203 through the polytetrafluoroethylene joint and the silicone tube, and then the reaction system solution enters each recess 103 through self-absorption under the mutual cooperation of the hydrophilic layer 108 and the first hydrophobic layer 109 .
  • the oil-sealed microfluidic device 500 is placed on the chip carrier of the microfluidic system 600 and fixed by a clamp, so that the electrodes and the conductive layer 107 of the microfluidic device 500 are electrically connected.
  • the parameters are set by, for example, the parameter setting button, and the cycle parameters are denaturation at 95°C for 15 seconds, annealing at 55°C for 45 seconds, and extension at 72°C for 45 seconds, for a total of 30 thermal cycles.
  • pre-denaturation can also be set at 95°C for 5 minutes.
  • the droplets in the micro-reaction chamber containing template DNA in the microfluidic device 500 were subjected to PCR amplification, while the droplets in the micro-reaction chamber without template DNA served as a control group.
  • the concave portion 103 can be filled with bovine serum albumin (BSA) solution with a mass fraction of 0.2%, and soaked for 1 hour to reduce the inner surface of the concave portion 103.
  • BSA bovine serum albumin
  • the adsorption of the sample template improves the reaction efficiency and detection accuracy.
  • use a micropump to extract the BSA solution, inject the reaction system solution into the depression 103, and then seal it with the oil phase.
  • mineral oil, liquid paraffin, isopropyl palmitate, butyl laurate, perfluoroalkane oil, etc. can be used to seal the sample injection hole 203 and the sample outlet hole 205 to prevent volatilization of the reaction system solution.
  • the reaction system solution in the concave portion 103 becomes the reagent to be detected after the polymerase chain reaction.
  • the microfluidic device 500 is taken out, and the microfluidic device 500 is observed through a fluorescence microscope.
  • the excitation wavelength can be, for example, 450 nm to 480 nm, thereby obtaining a fluorescence spectrum.
  • the reagent to be detected contains the mutated exon 19 of the EGFR gene
  • the reagent to be detected includes the specific PCR amplification primer for the mutated exon 19 of the EGFR gene
  • the PCR amplification primer Under the action of the mutated exon 19, the mutated exon 19 is greatly amplified, so that the reagent to be tested presents a positive result, that is, at least part of the reagent to be tested undergoes a fluorescent reaction.
  • the reagent to be tested does not contain the mutated exon 19 of the EGFR gene
  • the reagent to be tested presents a negative result, that is, the reagent to be tested does not undergo a fluorescent reaction.
  • the detection of exon 19 of the EGFR gene can be achieved.
  • microfluidic system 600 provided by the embodiments of the present disclosure can have substantially the same technical effects as the array substrates described in the previous embodiments, and therefore, for the sake of brevity, repeated descriptions are not repeated here.
  • FIG. 12 shows a flowchart of a fluorescence detection method 700 provided according to an embodiment of the present disclosure
  • FIG. 13 shows a schematic diagram of a fluorescence detection process of the microfluidic device 500 provided according to an embodiment of the present disclosure.
  • the fluorescence detection method 700 is described below with reference to FIGS. 12 and 13 .
  • S701 accommodating the reagent to be detected in at least one recess of the microfluidic device.
  • the prepared reaction system solution is injected into the injection hole 203 of the microfluidic device 500, and the reaction system solution enters through self-absorption under the mutual cooperation of the hydrophilic layer 108 and the first hydrophobic layer 109 into each recess 103 of the microfluidic device 500 .
  • the reaction system solution in each recessed portion 103 is subjected to polymerase chain reaction, that is, after the amplification reaction is completed, the reagent to be detected is formed.
  • S702 Allow the light of the first wavelength emitted by the light source to irradiate the at least one recessed portion through at least one opening of the shielding layer.
  • the fluorescence detection apparatus 300 includes a light source system (not shown) that emits light 301 of a first wavelength.
  • the light 301 of the first wavelength is irradiated into the corresponding recesses 103 defined by the limiting layer 102 through the openings 105 of the shielding layer 104 , thereby exciting the reagent to be detected in each recess 103 to emit fluorescence.
  • the light 301 of the first wavelength shown in the figure is incident from bottom to top because the blocking layer 104 is located below the defining layer 102 .
  • the light 301 of the first wavelength can also be incident from top to bottom.
  • the light source system may be integrated in the fluorescence detection device 300, or may be independent of the fluorescence detection device 300, which is not limited in the embodiment of the present disclosure.
  • S703 Detect the light of the second wavelength emitted by the reagent to be detected.
  • the light 302 of the second wavelength is emitted, and the second wavelength is greater than the first wavelength.
  • the light 301 of the first wavelength may be blue light, and the light 302 of the second wavelength may be green light; or, the light 301 of the first wavelength may be yellow light, and the light 302 of the second wavelength may be red light.
  • the fluorescence detection device 300 may include, for example, a fluorescence light source and an image sensor (eg, a charge coupled device (CCD) image sensor).
  • the image processing device is configured to process the detection picture output by the fluorescence detection device 300 .
  • the image processing apparatus may include a central processing unit (CPU) or a graphics processing unit (GPU), or the like.
  • FIG. 14A shows a fluorescent picture of a microfluidic device without a shielding layer in the conventional technology
  • FIG. 14B shows a fluorescent picture of a microfluidic device 500 provided according to an embodiment of the present disclosure.
  • Each dot in Figure 14A represents a recess 103' of the microfluidic device.
  • each of the recesses 103 ′ and the surrounding areas exhibit substantially the same color. This is because there is no shielding layer in the conventional microfluidic device.
  • the excitation light illuminates the depression, not only the reagent to be detected in the depression is excited to emit fluorescence, but also the substrate and the limiting layer in the microfluidic device are also Excited to emit fluorescence.
  • the background fluorescence caused by the substrate and the limiting layer in the microfluidic device greatly affects the fluorescence detection accuracy of the reagent to be detected in the depression, so that accurate detection results cannot be obtained. . Therefore, a phenomenon in which fluorescence is emitted from almost all regions as shown in FIG. 14A is exhibited.
  • Each dot in FIG. 14B represents the recess 103 of the microfluidic device 500 provided according to an embodiment of the present disclosure. It can be seen from FIG. 14B that the colors presented by the respective recesses 103 and the colors presented by the surrounding areas are very different, and the contrast is very obvious. Each recessed portion 103 exhibits a relatively bright color, while the surrounding area exhibits black.
  • the shielding layer 104 is provided in the microfluidic device 500, and the orthographic projection of the shielding layer 104 on the first substrate 101 and the orthographic projection of the confinement layer 102 on the first substrate 101 at least partially overlap, that is to say The shielding layer 104 shields at least a part or all of the defining layer 102, and the orthographic projection of the shielding layer 104 on the first substrate 101 must also at least partially overlap with the first substrate 101 itself.
  • the shielding layer 104 may shield the first substrate 101 and the defining layer 102 .
  • the shielding layer 104 can not only prevent the defining layer 102 from being irradiated by the light 301 of the first wavelength, but also can block the fluorescence emitted by the first substrate 101 irradiated by the light 301 of the first wavelength from transmitting through the shielding layer 104 . Therefore, the light 301 of the first wavelength can only be irradiated to the concave portion 103 through the opening 105 to excite the reagent to be detected in the concave portion 103 to emit fluorescence, so that the position corresponding to the concave portion 103 in FIG. 14B presents a brighter color. Regions other than the recessed portion 103 appear black.
  • the fluorescence interference caused by the first substrate 101 and the limiting layer 102 can be reduced or even avoided, so that the fluorescence signal emitted by the reagent to be detected in the recessed portion 103 can be accurately identified by the detector. It can read the reaction signal sensitively and more accurately, improve the fluorescence detection accuracy of the reagent to be detected, and provide image data support for the data analysis of subsequent nucleic acid amplification reactions.
  • clearer microwell array imaging can be achieved, detection errors caused by false positives can be reduced, and interference between different channels in the multi-channel fluorescence signal detection process can be well avoided.
  • Yet another aspect of the present disclosure provides a method 800 of fabricating a microfluidic device 500, which may include the array substrate described in any of the preceding embodiments.
  • the method steps are briefly described below by taking the microfluidic device 500 including the array substrate 100 as an example.
  • Step 801 providing a first substrate 101 .
  • the first substrate 101 may be made of any suitable material, in one example, the first substrate 101 is made of glass.
  • Step 802 forming a conductive film layer on the first substrate 101 at about 240°C.
  • the thicknesses of sequentially deposited on the first substrate 101 are The molybdenum (Mo) layer, the thickness is The aluminum neodymium (AlNd) layer and thickness of molybdenum (Mo) layer to form a conductive film layer.
  • the conductive film layer is patterned, for example, exposed, developed, and etched to form the conductive layer 107 .
  • Step 803 at about 200° C., deposit a first insulating film layer on the conductive layer 107 , and pattern the first insulating film layer to form a first insulating layer 110 covering the conductive layer 107 .
  • the first insulating layer 110 has a thickness of about SiO2 layer.
  • Step 804 Pattern the first insulating layer 110 to form at least one via hole 112 penetrating the first insulating layer 110 , the at least one via hole 112 exposing a portion of the conductive layer 107 .
  • the first insulating layer 110 is etched in a dry etching machine to form the via hole 112.
  • the pressure is about 150mtorr, the power is about 800w, and the volume flow rate of O 2 is about Etching for 10s under the conditions of 400sccm (standard cubic centimeter per minute) ; etching for 200s under the conditions of a pressure of about 60mtorr, a power of about 800w, a gas volume flow ratio of CF4 and O2 of about 200:50; Etching for 30s at about 130mtorr, about 800w power, O2 and CF4 gas volume flow ratio of about 400 :40; and about 60mtorr pressure, about 800w power, CF4 and O2 gas The etching was performed for 160 s under the condition that the volume flow ratio was about 200:50.
  • Step 805 deposit a conductive film layer on the side of the first insulating layer 110 away from the first substrate 101 , and then perform the steps of exposing, developing, etching, and stripping the conductive film layer to form the patterned heating electrode 106 .
  • the material of the heater electrode 106 is ITO.
  • the heater electrode 106 includes a plurality of subsections that are separated from each other.
  • Step 806 depositing a second insulating film layer on the side of the heating electrode 106 away from the first substrate 101 , and patterning the second insulating film layer to form a second insulating layer 111 at least partially covering the heating electrode 106 .
  • the material of the second insulating layer 111 is SiO 2 .
  • the second insulating layer 111 includes a thickness of about SiO 2 layer and thickness is approximately SiN x layer.
  • Step 807 Coating a shielding film layer on the side of the second insulating layer 111 away from the first substrate 101 , and patterning the shielding film layer to form the shielding layer 104 defining the opening 105 .
  • the specific steps of forming the shielding layer 104 may include: under the condition of a pressure of 30 KPa, spin coating the shielding film layer on the side of the second insulating layer 111 away from the first substrate 101 at a speed of about 380 rpm, the spin coating time is about 7 seconds.
  • the spin-coated blocking film layer was then pre-cured at 90° C. for 120 seconds. Next, the blocking film layer is exposed, developed and etched through a mask, and the development time is about 75 seconds.
  • the etched shielding film layer is post-cured at 230° C. for about 20 minutes to form the shielding layer 104 defining the opening 105 .
  • the thickness of the blocking layer 104 is, for example, in the range of 0.6-2.4 microns, eg, 2 microns.
  • the material forming the blocking layer 104 includes chromium, chromium oxide, black resin.
  • Step 808 Coating a confinement film layer on the side of the shielding layer 104 away from the first substrate 101 , and patterning the confinement film layer to form a confinement layer 102 defining a plurality of concave portions 103 .
  • the process of forming the defining layer 102 is described as follows: first, under the pressure of 30KPa, spin-coating optical glue on the surface of the blocking layer 104 away from the first substrate 101 at a speed of 300 rpm, and the spin-coating time is about 10 seconds, then the optical glue was cured for 120 seconds at a temperature of 90°C. The above process was repeated twice to obtain a defined film layer.
  • the limiting film layer is exposed through a mask, and then the exposed limiting film layer is developed for 100 seconds with a developing solution, and then etched. At a temperature of 230° C., the etched limiting film layer is cured for 30 minutes, and finally a limiting layer 102 defining a plurality of depressions 103 is obtained.
  • the material of the defining layer 102 includes photoresist.
  • the orthographic projection of each opening 105 of the shielding layer 104 on the first substrate 101 at least partially overlaps the orthographic projection of a corresponding recess 103 of the limiting layer 102 on the first substrate 101, and the shielding layer 104 is at the first substrate 101.
  • the orthographic projection on a substrate 101 at least partially overlaps the orthographic projection of the defining layer 102 on the first substrate 101 .
  • the concave portion 103 of the defining layer 102 is a cylinder
  • the bottom diameter of the concave portion 103 is 50 microns
  • the depth is between 40 and 50 microns
  • the distance between the centers of two adjacent concave portions 103 is 100 ⁇ m. microns.
  • Step 809 at 200° C., deposit an insulating film layer on the surface of the defining layer 102 away from the first substrate 101 , and perform exposure, development and etching on the insulating film layer to form a patterned layer.
  • the patterned layer was treated with a 0.4% KOH solution for about 15 minutes to hydrophilically modify the patterned layer, thereby forming a hydrophilic layer 108 .
  • the hydrophilic layer 108 covers the surface of the defining layer 102 away from the first substrate 101 and at least covers the sidewall of each recess 103 .
  • the hydrophilic layer 108 has a thickness of about SiO2 layer.
  • Step 810 depositing an insulating film layer on the surface of the hydrophilic layer 108 away from the first substrate 101 , and exposing, developing and etching the insulating film layer to form the first hydrophobic layer 109 .
  • the process of forming the first hydrophobic layer 109 is as follows: in a Plasma Enhanced Chemical Vapor Deposition (PECVD) equipment, the temperature is about 200°C, the power is about 600W, and the pressure is about 1200mtorr , and the distance between the plasma reaction enhancement target in the PECVD equipment and the sample to be deposited is about 1000 mils, into the reaction chamber SiH 4 (volume flow rate of 110sccm), NH 3 (volume flow rate of 700sccm) and N 2 (volume flow rate of 2260 sccm, passage time of 100 seconds) to deposit on the surface of the hydrophilic layer 108 away from the first substrate 101 with a thickness of The SiN x film layer is exposed, developed and etched to form the first hydrophobic layer
  • Step 811 Encapsulate the array substrate 100 that has undergone the hydrophilic and hydrophobic treatment.
  • Step 812 providing the second substrate 201 .
  • the second substrate 201 may be made of any suitable material, in one example, the second substrate 201 is made of glass.
  • Step 813 Deposit a film layer on the side of the second substrate 201 close to the first substrate 101, and process the film layer to form a second hydrophobic layer 202, the second hydrophobic layer 202 having a thickness of about TiO2 layer.
  • the second hydrophobic layer 202 is made of a light absorbing material including at least one of TiO 2 and TiON.
  • the second hydrophobic layer 202 is formed of SiNx .
  • the second substrate 201 and the second hydrophobic layer 202 constitute a counter substrate 2000 opposite to the array substrate 100 .
  • Step 814 Punch holes in the second substrate 201 and the second hydrophobic layer 202 to form at least one sampling hole 203 and at least one sampling hole 205 penetrating the second substrate 201 and the second hydrophobic layer 202 .
  • the diameter of the at least one sample inlet hole 203 and the at least one sample outlet hole 205 is between 0.6 mm and 1.2 mm.
  • Step 815 Curing and encapsulating the array substrate 100 and the opposite substrate 2000 with a frame sealant, and defining the interval between the array substrate 100 and the opposite substrate 2000 .
  • the manufacturing method may further include more steps, which may be determined according to actual requirements, which are not limited in the embodiments of the present disclosure.
  • steps which may be determined according to actual requirements, which are not limited in the embodiments of the present disclosure.
  • reference may be made to the descriptions of the array substrate 100 and the microfluidic device 500 above, which will not be repeated here.
  • the manufacturing method of the microfluidic device 500 is basically the same as the above-mentioned method 800 , but the sequence of steps is slightly different.
  • the array substrate on which the above-mentioned film layers are formed is turned over, a shielding film layer is coated on the side of the first substrate 101 that faces away from the limiting layer 102 , and the shielding film layer is patterned to form an opening 105 defined with an opening 105 .
  • the shielding layer 104 .
  • the specific steps of forming the shielding layer 104 may include: under the condition of a pressure of 30 KPa, spin coating the shielding film layer on the side of the second insulating layer 111 away from the first substrate 101 at a speed of about 380 rpm, the spin coating time is about 7 seconds.
  • the spin-coated blocking film layer was then pre-cured at 90° C. for 120 seconds.
  • the blocking film layer is exposed, developed and etched through a mask, and the development time is about 75 seconds.
  • the etched shielding film layer is post-cured at 230° C. for about 20 minutes to form the shielding layer 104 defining the opening 105 .
  • the orthographic projection of each opening 105 of the shielding layer 104 on the first substrate 101 at least partially overlaps the orthographic projection of a corresponding recess 103 of the limiting layer 102 on the first substrate 101, and the shielding layer 104 is at the first substrate 101.
  • the orthographic projection on a substrate 101 at least partially overlaps the orthographic projection of the defining layer 102 on the first substrate 101 .
  • the thickness of the blocking layer 104 is, for example, in the range of 0.6-2.4 microns, eg, 2 microns.
  • the material forming the blocking layer 104 includes chromium, chromium oxide, black resin.
  • a third insulating film layer is deposited on the side of the shielding layer 104 away from the first substrate 101 , and the third insulating film layer is patterned to form a third insulating layer 115 .
  • the third insulating layer 115 has a protective effect on the shielding layer 104 .
  • the third insulating layer 115 has a thickness of about SiO 2 .
  • the manufacturing method of the microfluidic device 500 is basically the same as the above-mentioned method 800 , except that the order of step 807 and step 808 are reversed. That is, after preparing the first substrate 101 , the conductive layer 107 , the first insulating layer 110 , the heating electrode 106 , and the second insulating layer 111 in the order of the above steps 801 - 806 , the second insulating layer 111 is separated from the second insulating layer 111 according to the step 808 .
  • a defining layer 102 defining a plurality of recesses 103 is prepared on the surface of the first substrate 107 .
  • a blocking layer 104 defining an opening 105 is prepared on the surface of the defining layer 102 away from the first substrate 101 , and the preparation process is the same as that described in the foregoing step 807 .
  • the formed blocking layer 104 covers the side surface of the defining layer 102 and the surface away from the first substrate 101 .
  • the subsequent preparations are continued according to steps 809-815 to complete the preparation of the microfluidic device 500 including the array substrate 300 .
  • the manufacturing method of the microfluidic device 500 is basically the same as the above-mentioned method 800 , except that an additional step is added between step 808 and step 809 . That is, the first substrate 101 , the conductive layer 107 , the first insulating layer 110 , the heating electrode 106 , the second insulating layer 111 , the shielding layer 104 and the limiting layer 102 are sequentially prepared according to the above steps 801 - 808 .
  • an exemplary process for preparing the defining layer 102 is as follows: first, under the pressure of 30KPa, spin-coating optical glue on the surface of the blocking layer 104 away from the first substrate 101 at a speed of 200 rpm, and the spin-coating time About 10 seconds, then the optical glue was cured for 120 seconds at a temperature of 90°C. Next, the optical paste was exposed through a mask, and then the exposed optical paste was developed with a developing solution for 240 seconds and etched. At a temperature of 230° C., the etched optical adhesive is cured for 30 minutes, and finally a defining layer 102 defining a plurality of recesses 103 is obtained.
  • the material of the defining layer 102 includes photoresist.
  • the blocking layer 104 defining the opening 105 is again prepared on the surface of the defining layer 102 away from the first substrate 101 , and the preparation method is the same as that described in the above step 807 .
  • the formed blocking layer 104 covers the side surface of the defining layer 102 and the surface away from the first substrate 101 .
  • follow steps 809 to 815 are continued to complete subsequent preparations to complete the preparation of the microfluidic device 500 including the array substrate 400 . That is, when the microfluidic device 500 including the array substrate 400 is prepared, the blocking layer 104 needs to be prepared twice before and after the process of preparing the defining layer 102 .
  • the using method 900 may include the following steps:
  • Step 901 allowing the reaction system solution to enter the plurality of recesses 103 of the microfluidic device 500 through the injection hole 203 of the microfluidic device 500;
  • Step 902 apply an electrical signal to the conductive layer 107 of the microfluidic device 500 to drive the heating electrodes 106 to heat the plurality of recesses 103 through the conductive layer 107 .
  • the using method 900 further includes: cooling the plurality of depressions 103 to change the temperature of the plurality of depressions 103, so that the reaction system solution in the plurality of depressions 103 undergoes a denaturation stage and an annealing stage and temperature cycling during the extension phase.
  • cooling equipment can be used to cool it down, and the structure is simple and easy to implement.
  • the using method 900 may further include more steps, which may be determined according to actual requirements, which are not limited in the embodiments of the present disclosure.

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Abstract

一种阵列基板、微流控装置、微流控系统以及荧光检测方法。阵列基板(100)包括至少一个凹陷部(103)，其中，阵列基板位于一平面内，至少一个凹陷部在平面上的正投影的面积与阵列基板在平面上的正投影的面积的比值介于0.05至0.60之间。该面积比可以使阵列基板具有恰当数量和恰当腔室容积的凹陷部。

Description

阵列基板、微流控装置、微流控系统、荧光检测方法 技术领域
本公开涉及生物医学检测领域，尤其涉及一种阵列基板、包括该阵列基板的微流控装置、包括该微流控装置的微流控系统以及荧光检测方法。
背景技术
聚合酶链式反应(Polymerase Chain Reaction，PCR)是一种用于放大扩增特定的DNA片段的分子生物学技术，其能将微量的脱氧核糖核酸(DNA)大量复制，使其数量大幅增加。数字聚合酶链式反应(digital PCR，dPCR)技术是在PCR基础上发展起来的可以提供数字化DNA量化信息的定量分析技术，其与微流控技术相结合使得灵敏度和精确度有了很大提高。在该dPCR技术中，核酸样本被充分稀释，使得每个反应单元内的目标分子(即DNA模板)的数量少于或者等于1个。在每个反应单元中分别对目标分子进行PCR扩增，扩增结束后对各个反应单元的荧光信号进行统计学分析，从而实现对单分子DNA的绝对定量检测。由于dPCR具有灵敏度高、特异性强、检测通量较高、定量准确等优点而被广泛应用于临床诊断、基因不稳定分析、单细胞基因表达、环境微生物检测和产前诊断等领域。
发明内容
根据本公开的一方面，提供了一种阵列基板，该阵列基板包括至少一个凹陷部。所述阵列基板位于一平面内，所述至少一个凹陷部在所述平面上的正投影的面积与所述阵列基板在所述平面上的正投影的面积的比值介于0.05至0.60之间。
在一些实施例中，所述阵列基板还包括：第一衬底；位于所述第一衬底上的限定层，其限定所述至少一个凹陷部；以及遮挡层，其限定至少一个开口。所述至少一个开口在所述第一衬底上的正投影与所述至少一个凹陷部在所述第一衬底上的正投影至少部分重叠，并且所述遮挡层在所述第一衬底上的正投影与所述限定层在所述第一衬底上的正投影至少部分重叠。
在一些实施例中，所述至少一个凹陷部贯穿所述限定层。
在一些实施例中，所述遮挡层位于所述第一衬底与所述限定层之间。
在一些实施例中，所述遮挡层位于所述第一衬底远离所述限定层的一侧。
在一些实施例中，所述遮挡层包括第一部分，所述第一部分位于所述限定层远离所述第一衬底的一侧，并且附接到所述限定层的侧面和远离所述第一衬底的表面上。所述第一部分限定所述至少一个开口。
在一些实施例中，所述遮挡层还包括第二部分，所述第二部分附接到所述限定层的靠近所述第一衬底的表面上，以与所述第一部分共同包围所述限定层。所述第二部分限定所述至少一个开口。
在一些实施例中，所述遮挡层的第一部分限定的所述至少一个开口在所述第一衬底上的正投影与所述遮挡层的第二部分限定的所述至少一个开口在所述第一衬底上的正投影完全重叠。
在一些实施例中，所述限定层的靠近所述第一衬底的表面和/或所述限定层的远离所述第一衬底的表面构成所述遮挡层。
在一些实施例中，位于所述至少一个凹陷部的侧壁上的任意一点的切线与所述阵列基板位于的所述平面呈一角度，且所述角度不等于90°。
在一些实施例中，所述限定层限定多个凹陷部，所述遮挡层限定多个开口，所述多个凹陷部与所述多个开口一一对应，并且所述多个开口中的每一个在所述第一衬底上的正投影位于与该开口对应的一个凹陷部在所述第一衬底上的正投影之内。
在一些实施例中，所述至少一个凹陷部中的每一个和所述至少一个开口中的每一个在所述第一衬底上的正投影的形状均包括圆形或正多边形。
在一些实施例中，所述限定层限定多个凹陷部，所述遮挡层限定多个开口，所述多个凹陷部与所述多个开口一一对应，并且所述多个开口中的每一个在所述第一衬底上的正投影位于与该开口对应的一个凹陷部在所述第一衬底上的正投影之内。所述每个开口和所述与该开口对应的一个凹陷部在所述第一衬底上的正投影的形状均为圆形，所述每个开口的直径在20～80μm的范围内，并且所述与该开口对应的一 个凹陷部的直径在25～90μm的范围内；或者，所述每个开口在所述第一衬底上的正投影的形状为第一正多边形，所述与该开口对应的一个凹陷部在所述第一衬底上的正投影的形状为第二正多边形，所述第一正多边形的内切圆的直径在20～80μm的范围内，并且所述第二正多边形的内切圆的直径在25～90μm的范围内。
在一些实施例中，所述限定层的材料包括光刻胶。
在一些实施例中，所述遮挡层的材料包括不透光材料，所述不透光材料包括铬、氧化铬、黑色树脂。
在一些实施例中，所述遮挡层在垂直于所述第一衬底的方向上的厚度在0.6～2.4μm的范围内。
在一些实施例中，所述阵列基板还包括位于所述第一衬底与所述限定层之间的加热电极，所述加热电极被配置为对所述至少一个凹陷部加热。
在一些实施例中，所述加热电极的材料包括氧化铟锡。
在一些实施例中，所述加热电极包括彼此分离的多个子部分。
在一些实施例中，所述阵列基板还包括导电层。所述导电层位于所述第一衬底与所述加热电极之间并且与所述加热电极电连接，并且所述导电层的至少一部分在所述第一衬底上的正投影落在所述加热电极在所述第一衬底上的正投影的外围，并且所述导电层至少部分地包围所述加热电极。
在一些实施例中，所述阵列基板还包括亲水层和第一疏水层。所述亲水层至少覆盖所述至少一个凹陷部的侧壁，所述第一疏水层位于所述限定层远离所述第一衬底的一侧并且相较于所述亲水层更远离所述第一衬底。
在一些实施例中，所述亲水层还覆盖所述限定层远离所述第一衬底的表面以及所述至少一个凹陷部的底部。
在一些实施例中，所述第一疏水层限定多个孔，所述限定层限定多个凹陷部，所述遮挡层限定多个开口，所述多个孔、所述多个凹陷部以及所述多个开口一一对应。所述多个孔中的每一个在所述第一衬底上的第一正投影和与该孔对应的一个开口在所述第一衬底上的第三正投影均位于与该孔对应的一个凹陷部在所述第一衬底上的第二正投影之内，并且所述第一正投影、所述第二正投影和所述第三正投影构 成同心圆环。所述第一正投影位于所述第二正投影和所述第三正投影之间，并且所述第三正投影位于所述第一正投影之内。
在一些实施例中，所述第一疏水层的面积与所述亲水层的面积的比值介于0.01至2.00之间。
根据本公开的另一方面，提供了一种微流控装置，该微流控装置包括在前面任一个实施例中描述的阵列基板、以及与所述阵列基板对盒的对置基板和位于所述阵列基板与所述对置基板之间的间隔。所述对置基板包括：第二衬底；以及位于所述第二衬底靠近所述第一衬底的一侧的第二疏水层。所述对置基板包括至少一个贯穿所述第二衬底和所述第二疏水层的通孔。
在一些实施例中，所述第一衬底和所述第二衬底的材料包括玻璃。
在一些实施例中，所述第二疏水层包括吸光材料，并且所述吸光材料包括TiO 2和TiON中的至少一种。
根据本公开的又一方面，提供了一种微流控系统，该微流控系统包括控制装置和在前面任一个实施例中描述的微流控装置。所述控制装置与所述微流控装置电连接，并且配置为控制所述微流控装置的温度。
根据本公开的再一方面，提供了一种荧光检测方法，该方法包括：将待检测试剂容纳在前面任一个实施例中描述的微流控装置的至少一个凹陷部中；使光源发射的第一波长的光通过所述遮挡层限定的至少一个开口照射到所述至少一个凹陷部；以及检测所述待检测试剂发射的第二波长的光。
附图说明
为了更清楚地描述本公开实施例中的技术方案，下面将对实施例中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本公开的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1示出了根据本公开的实施例提供的阵列基板的部分剖面图；
图2示出了根据本公开的实施例提供的阵列基板的部分剖面图；
图3示出了根据本公开的实施例提供的阵列基板中的遮挡层和限定有凹陷部的限定层的部分平面俯视图；
图4示出了根据本公开的实施例提供的阵列基板中的限定有凹陷部的限定层的平面俯视图；
图5示出了根据本公开的实施例提供的阵列基板的平面俯视图；
图6示出了根据本公开的实施例提供的阵列基板中的部分结构的平面俯视图；
图7示出了根据本公开的另一实施例提供的阵列基板的部分剖面图；
图8示出了根据本公开的又一实施例提供的阵列基板的部分剖面图；
图9示出了根据本公开的再一实施例提供的阵列基板的部分剖面图；
图10示出了根据本公开的实施例提供的微流控装置的部分剖面图；
图11示出了根据本公开的实施例提供的微流控系统的框图；
图12示出了根据本公开的实施例提供的荧光检测方法的流程图；
图13示出了根据本公开的实施例提供的微流控装置的荧光检测过程的示意图；
图14A示出了相关技术中的微流控装置经光源照射后的荧光图片；以及
图14B示出了根据本公开的实施例提供的微流控装置经光源照射后的荧光图片。
具体实施方式
下面将结合本公开实施例中的附图，对本公开实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本公开一部分实施例，而不是全部的实施例。基于本公开中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本公开保护的范围。
由于dPCR技术具有灵敏度高、特异性强、检测通量高、定量准确等优点，因此被广泛应用于临床诊断、基因不稳定分析、单细胞基因表达、环境微生物检测和产前诊断等领域。在应用dPCR过程中，在完成对微流控装置中的每个反应腔内的反应体系溶液的PCR扩增之后，通常需要利用一定波长的激发光对各个反应腔内的待检测试剂进行荧 光检测。但是，发明人发现，在常规的微流控装置中，由于所有反应腔所占据的面积远远小于微流控装置的面积，也即每个反应腔具有非常小的容积，因此导致每个反应腔内的反应体系溶液无法充分进行扩增反应，因而得到较少剂量的待检测试剂。这种远低于所需剂量的待检测试剂在激发光的照射下无法辐射出令人期望的荧光强度，从而严重影响了反应腔内的待检测试剂的荧光检测精度，进而造成所得的荧光检测结果无法满足生物医学领域的诊断要求(例如单细胞分析、癌症早期诊断和产前诊断)。
需要说明的是，在该说明书中，“待检测试剂”是指微流控装置中的反应体系溶液进行聚合酶链式反应之后的试剂，也即完成扩增反应后的反应体系试剂。
基于此，本公开的实施例提供了一种阵列基板、微流控装置、微流控系统以及荧光检测方法。该阵列基板能够提高包括该阵列基板的微流控装置中的待检测试剂的荧光检测精度。
下面，将参考附图详细地描述本公开的各个实施例。应当注意的是，不同的附图中相同的附图标记将用于指代已描述的相同的元件。
根据本公开的一方面，提供了一种阵列基板100。图1示出了阵列基板100的局部剖面图，图2示出了阵列基板100的另一剖面图(图2是沿着图5的A-A'线截取的剖面图)，图3示出了阵列基板100中的部分结构的平面俯视图。参考图1至图3，该阵列基板100包括至少一个凹陷部103，阵列基板100位于一平面内，至少一个凹陷部103在该平面上的正投影的面积与阵列基板100在该平面上的正投影的面积的比值介于0.05至0.60之间。例如，至少一个凹陷部103在该平面上的正投影的面积与阵列基板100在该平面上的正投影的面积的比值可以为0.05、0.10、0.15、0.20、0.25、0.30、0.35、0.40、0.45、0.50、0.55、0.60。需要说明的是，在本文中，“阵列基板100位于的平面”是指该阵列基板100作为整体所在的平面，阵列基板100在该平面内延伸。在一些示例中，至少一个凹陷部103的数量可以是2000～1000000个。在一些示例中，至少一个凹陷部103的数量可以是40000～100000个。在一个示例中，至少一个凹陷部103的数量为22500个。每个凹陷部103在阵列基板100所位于的平面上的正投影的形状可以为圆形、椭圆形、矩形、正方形、三角形、正六边形、多边形(例如正多边形)、不 规则形等任意适当的形状。
凹陷部103用于容纳反应体系溶液(例如DNA分子)，通过dPCR技术对该反应体系溶液数量扩增之后得到待被检测的试剂。本申请的发明人通过设计多个凹陷部103与阵列基板100的面积比值来使两者具有合适的面积比例关系，即，使多个凹陷部103在阵列基板100所位于的平面上的正投影的面积与阵列基板100在该平面上的正投影的面积的比值介于0.05至0.60之间，可以使阵列基板100具有恰当数量和恰当腔室容积的凹陷部103，这样能够使每个凹陷部103内所容纳的反应体系溶液能够进行充分的dPCR反应，提高反应体系溶液的利用率，从而在扩增之后能够得到更多剂量的待检测试剂。该剂量的待检测试剂在激发光的照射下能够辐射出令人期望的荧光强度，从而可以提高待检测试剂的荧光检测精度，使得所得的荧光检测结果可以满足生物医学领域的诊断要求(例如单细胞分析、癌症早期诊断和产前诊断)。
继续参考图1至图3，该阵列基板100还包括：第一衬底101；位于第一衬底101上的限定层102，该限定层102限定上述至少一个凹陷部103；以及遮挡层104，该遮挡层104限定至少一个开口105。至少一个开口105在第一衬底101上的正投影与至少一个凹陷部103在第一衬底101上的正投影至少部分重叠，并且遮挡层104在第一衬底101上的正投影与限定层102在第一衬底101上的正投影至少部分重叠。
需要说明的是，在本说明书中，诸如“限定层102限定上述至少一个凹陷部103”的短语，其意指该限定层102包括或具有至少一个凹陷部103，该凹陷部103是通过对限定层102进行图案化而形成的，例如通过对限定层102进行挖孔而得到多个凹陷部103。另外，需要说明的是，虽然在本说明书中描述为限定层102和遮挡层104，但是限定层102和遮挡层104可以是两个独立的膜层结构，也可以是同一个膜层结构。在一些实施例中，限定层102和遮挡层104是两个独立的膜层结构，限定层102由一种适当材料的膜层形成，遮挡层104由具有遮光性质的另一种膜层形成。在替代的实施例中，限定层102和遮挡层104是同一个膜层结构，例如通过对限定层102的一部分(例如限定层102的靠近第一衬底101的表面和/或限定层102的远离第一衬底101的表面)进行物理或化学处理，使其不透光，从而使限定层102的该部分充当遮挡层104；而限定层102的剩余未被处理的部分继续起着限定层 102的作用。
使一定波长的激发光沿从下到上的方向(即在图1中沿从第一衬底101到限定层102的方向)通过由遮挡层104限定的开口105照射到凹陷部103，使得凹陷部103内的具有荧光属性的试剂被激发并发射出荧光光谱。阵列基板100中的限定层102由于其固有的材料属性在受到激发光的照射后通常也会发射出不期望的荧光。但是，在本公开的实施例中，通过设置遮挡层104并且使遮挡层104在第一衬底101上的正投影与限定层102在第一衬底101上的正投影至少部分重叠，当激发光经由开口105照射到凹陷部103时，遮挡层104可以至少部分地遮挡限定层102以使其不被激发光照射，从而能够避免限定层102被激发光照射而产生干扰荧光。这样，激发光经由开口105仅能激发凹陷部103内的待检测试剂。因此，通过这样的布置方式，可以减少甚至避免限定层102造成的荧光干扰，使得凹陷部103内的待检测试剂发出的荧光信号能够被探测器准确识别，从而可以更灵敏、更准确地识读反应信号，提高待检测试剂的荧光检测精度，为后续核酸扩增反应的数据分析提供图像数据支持。另外，通过这样的布置方式，可以实现更清晰的微孔阵列成像，减少假阳性造成的检测误差，并且能够很好地避免多通道荧光信号检测过程中的不同通道之间的干扰。
需要说明的是，“具有荧光属性的试剂”是指该试剂被特定波长的激发光照射时，会在较短时间内发射出波长比激发光更长的荧光。在该特定波长的激发光照射下，该试剂相比于阵列基板100中的其他膜层而言更易于发射荧光。
第一衬底101对阵列基板100起保护、支撑等作用。第一衬底101可以由任何合适的材料制成，例如由刚性材料或柔性材料制成，该刚性材料或柔性材料包括但不限于玻璃、陶瓷、硅、聚酰亚胺等材料。在一个示例中，第一衬底101由玻璃制成，玻璃材质可以降低第一衬底101的表面粗糙度，有利于反应溶液(例如液滴)在相应膜层表面上的移动。
限定层102可以由任何适当的材料制成。在一些实施例中，限定层102的材料为光刻胶。该光刻胶可以通过任何适当的方式(例如旋涂)形成在第一衬底101上，并且被图案化以形成限定层102。限定层102通常具有较厚的厚度。在一个示例中，限定层102的厚度范围可以 为5微米至100微米，例如，9.8微米。限定层102限定出多个凹陷部103，多个凹陷部103彼此间隔设置。每个凹陷部103可以贯穿限定层102，也可以不完全贯穿限定层102。在后者的情况下，限定层102的一部分形成在凹陷部103的底部。在本公开的实施例中，凹陷部103可以贯穿限定层102。这样，当激发光经由开口105照射到凹陷部103时，可以直接照射到凹陷部103内的试剂，从而可以进一步提高试剂的荧光检测精度。凹陷部103为反应体系溶液提供了容纳空间，移动至凹陷部103内的反应体系溶液会相对稳定地留置在凹陷部103中。例如，该凹陷部103可以是凹槽、凹口、微孔等结构，只要具有能够容纳反应体系溶液的空间即可，本公开的实施例对此不作限定。
多个凹陷部103的形状可以完全相同，也可以部分不同。在一些实施例中，每个凹陷部103在第一衬底101上的正投影的形状为圆形。每个凹陷部103的立体形状例如为近似的圆柱体，也即，在垂直于第一衬底101的方向上的截面为近似的矩形且在平行于第一衬底101的平面上的截面为近似的圆形。在一些实施例中，圆柱体的底面的直径的范围为1微米至100微米，例如，20微米至50微米、50微米至90微米。圆柱体的高的范围为5微米至100微米，例如，30微米至50微米。例如，在一些示例中，圆柱体的底面直径约为50微米，圆柱体的高在40微米至50微米的范围内，相邻两个凹陷部103的圆心之间的距离约为100微米。
凹陷部103的形状可以根据实际需求设计，例如，每个凹陷部103的形状也可以为圆台形、长方体形、多边棱柱、球体、椭球体等，本公开的实施例对此不作限制。例如，凹陷部103在平行于第一衬底101的平面上的截面形状可以为椭圆形、三角形、多边形、不规则的形状等，在垂直于第一衬底101的方向上的截面可以为正方形、圆形、平行四边形、梯形等多边形等。
在一些实施例中，每个凹陷部103的侧壁上的任意一点的切线与阵列基板100所位于的平面呈一定角度，该角度不等于90°。也就是说，每个凹陷部103的侧壁不垂直于阵列基板100所位于的平面，而是有一定的倾斜，该倾斜角度例如可以是锐角(大于0°且小于90°)或者是钝角(大于90°且小于180°)。在一个示例中，如图1所示，凹陷部103的侧壁与阵列基板100所位于的平面呈钝角，侧壁的该倾斜角度使得 凹陷部103的底部面积小于与该底部对应的上方开口的面积。当然，凹陷部103的形状并不仅限于此。在另一个示例中，凹陷部103的侧壁与阵列基板100所位于的平面呈锐角，侧壁的该倾斜角度使得凹陷部103的底部面积大于与该底部对应的上方开口的面积。这样设计凹陷部103的侧壁，可以使每个凹陷部103在有限的空间内获得更大的容积，从而可以使每个凹陷部103容纳更多的反应体系溶液，进而通过扩增反应之后可以得到更多剂量的待检测试剂，提高待检测试剂的荧光发射强度，进而可以提高待检测试剂的荧光检测精度。
需要说明的是，凹陷部103内部的环绕其四周的壁均可以称为凹陷部103的侧壁，如图2和图3所示，凹陷部103的侧壁与限定层102相邻，并且凹陷部103的侧壁在垂直于第一衬底101方向上的高度与限定层102在垂直于第一衬底101方向上的高度基本相同。凹陷部103的侧壁与凹陷部103的底部构成凹陷部103的反应腔室，以容纳待检测试剂。另外，需要说明的是，凹陷部103的侧壁可以是斜面，也可以是弧形面，或者任意曲率(例如变化曲率)的曲面，本公开的实施例对凹陷部103的侧壁的形状不做具体限定。
图3示出了图2中的遮挡层104和限定有凹陷部103的限定层102的平面俯视图，图4示出了阵列基板100中的限定有凹陷部103的限定层102的平面俯视图，图4中的每一个小圆圈表示一个凹陷部103。如图3和图4所示，多个凹陷部103在第一衬底101上均匀分布。例如，在第一衬底101上，多个凹陷部103沿水平方向和竖直方向呈阵列排布。这种方式可以使后续阶段对包含该阵列基板100的微流控装置进行光学检测时得到的荧光图像较为规则和整齐，以便于快速、准确地得到检测结果。当然，本公开的实施例不限于此，多个凹陷部103在第一衬底101上也可以不均匀分布，或者呈其他排列方式，本公开的实施例对此不作限制。凹陷部103的数量可以为2000～1000000个。在一些示例中，凹陷部103的数量为40000～100000个。在一个示例中，凹陷部103的数量为22500个。由此，该阵列基板100具有较大的检测通量。
需要说明的是，在本公开的实施例中，凹陷部103的尺寸和数量等可以根据实际需求而定，凹陷部103的尺寸和数量与第一衬底101和阵列基板100的尺寸相关。在凹陷部103的尺寸不变的情况下，凹 陷部103的数量越大，第一衬底101以及阵列基板100的尺寸也越大。
由于反应体系溶液中的目标分子(即DNA分子)被充分稀释，当反应体系溶液进入各个凹陷部103后，每个凹陷部103中的目标分子小于或等于1，也即是，每个凹陷部103中仅包括一个目标分子或者不包括目标分子，以便于在后续阶段得到准确的检测结果。
如图1和图2所示，遮挡层104位于第一衬底101和限定层102之间。在一个示例中，遮挡层104附接到限定层102的面向第一衬底101的底表面上。在一个示例中，限定层102在第一衬底101上的正投影完全落在遮挡层104在第一衬底101上的正投影之内，如图3所示。通过这样的布置方式，经由开口105入射的激发光完全不会照射到限定层102上。遮挡层104可以由任何适当的材料制成，只要该材料可以遮挡光或吸收光即可，本公开的实施例对遮挡层104的材料不作具体限定。在一些实施例中，遮挡层104的材料为不透光材料，该不透光材料例如可以是不透光的金属。在一些示例中，遮挡层104的材料为显示领域通常使用的黑色矩阵(Black Matrix,BM)，该黑色矩阵的材料包括铬、氧化铬、黑色树脂中的一种或多种。在一些示例中，遮挡层104在垂直于第一衬底101的方向上的厚度在0.6微米至2.4微米的范围内，例如2微米。
遮挡层104限定多个开口105，多个开口105与多个凹陷部103一一对应，并且每个开口105在第一衬底101上的正投影位于与该开口105对应的一个凹陷部103在第一衬底101上的正投影之内。也即，每个开口105在第一衬底101上的正投影的面积小于与该开口105对应的一个凹陷部103在第一衬底101上的正投影的面积。通过这样的布置方式，在后续的荧光检测时，激发光经由开口105仅能照射到凹陷部103，而不会照射到凹陷部103附近周围的区域，从而可以避免凹陷部103附近周围区域的膜层(例如限定层102的部分)对荧光检测的干扰。在实际产品设计中，可以根据入射激发光的照射光斑大小、限定层102的厚度等来对应地设计遮挡层104的开口105的大小。需要说明的是，术语诸如“多个A与多个B一一对应”是指A的数量与B的数量相等且每个A对应一个B，而且每个A在第一衬底101上的正投影与该A对应的一个B在第一衬底101上的正投影至少部分重叠。在一些实施例中，每个开口105与对应的一个凹陷部103的形状可以 相同，也可以不同。开口105的形状可以为圆柱体形、圆台形、长方体形、多边棱柱、球体、椭球体等，本公开的实施例对此不作限制。例如，开口105在平行于第一衬底101的平面上的截面形状可以为椭圆形、三角形、多边形、不规则的形状等，在垂直于第一衬底101的方向上的截面可以为正方形、圆形、平行四边形、梯形等多边形等。在一个示例中，每一个开口105和对应的一个凹陷部103在第一衬底101上的正投影的形状均为圆形，并且每个开口105的直径在20～80微米的范围内，而与该开口105对应的一个凹陷部103的直径在25～90微米的范围内。需要说明的是，开口105的直径小于与其对应的凹陷部103的直径。例如，开口105的直径是20微米，则与其对应的凹陷部103的直径可以是25微米；开口105的直径是60微米，则与其对应的凹陷部103的直径可以是70微米；开口105的直径是80微米，则与其对应的凹陷部103的直径可以是90微米等。在另一个示例中，每一个开口105在第一衬底101上的正投影的形状为第一正多边形，与该开口105对应的一个凹陷部103在第一衬底101上的正投影的形状为第二正多边形，第一正多边形的内切圆的直径在20～80μm的范围内，并且第二正多边形的内切圆的直径在25～90μm的范围内。需要说明的是，第一正多边形的内切圆的直径小于第二正多边形的内切圆的直径。例如，第一正多边形的内切圆的直径是20微米，则第二正多边形的内切圆的直径可以是25微米；第一正多边形的内切圆的直径是60微米，则第二正多边形的内切圆的直径可以是70微米；第一正多边形的内切圆的直径是80微米，则第二正多边形的内切圆的直径可以是90微米等。通过使开口105与凹陷部103的形状基本相同并且使开口105的直径小于凹陷部103的直径，可以使激发光以较高的利用率照射到凹陷部103，并且如上所述那样仅照射到凹陷部103而不会照射到凹陷部103的周围区域。
由于遮挡层104位于第一衬底101与限定层102之间，因此，遮挡层104在第一衬底101上的正投影与第一衬底101本身必然存在一定的重叠，也即遮挡层104必然遮挡第一衬底101的至少部分。因此，在激发光沿着从下至上的方向经由开口105照射到凹陷部103时，遮挡层104不仅可以阻挡激发光照射到限定层102，而且还可以阻挡照射到第一衬底101上的激发光透射穿过遮挡层104，从而不仅可以避免限 定层102发射出不期望的荧光，而且还可以至少部分地降低第一衬底101经激发光照射后(可能)产生的微量的荧光干扰。这进一步提高了凹陷部103内的试剂的荧光检测精度。
虽然上述实施例是以限定层102和遮挡层104为两个独立的膜层结构来描述的，但是如前所述，限定层102和遮挡层104也可以是同一个膜层结构。在限定层102和遮挡层104是同一个膜层结构的实施例中，通过对限定层102的靠近第一衬底101的表面(即限定层102的下表面)进行物理或化学处理，使其不透光，从而使限定层102的下表面充当遮挡层104；而限定层102的剩余未被处理的部分继续起着限定层102的作用。当凹陷部103贯穿限定层102时(即凹陷部103是类似于通孔的结构)，凹陷部103的底部的开口相当于遮挡层104的开口105；当凹陷部103不完全贯穿限定层102时(即凹陷部103是类似于盲孔的结构)，通过对限定层102的下表面进行处理，使其在对应凹陷部103的位置处形成有开口，该开口相当于遮挡层104的开口105。
在进行dPCR反应时，DNA片段的双链结构在高温(例如90℃)时变性形成单链结构，在低温(例如65℃)时引物与单链按照碱基互补配对原则实现结合，在DNA聚合酶最适宜温度(例如72℃)实现碱基结合延伸，上述过程即为变性-退火-延伸的温度循环过程。通过变性-退火-延伸的多个温度循环过程，DNA片段可实现大量复制。
为了实现上述温度循环过程，通常需要采用一系列的外部设备对包含该阵列基板100的微流控装置进行加热和冷却，使得设备体积庞大，操作复杂，且成本较高。并且，对微流控装置进行加热和冷却的过程中，微流控装置的整体温度随之变化，使得微流控装置中除了容纳DNA片段的凹陷部103以外的其他结构及部件的温度也随之变化，从而增加了例如电路等部件的损坏风险。此外，由于微流控装置中通常分布着几万到几十万个凹陷部103，在对微流控装置加热的过程中会出现各个凹陷部103处的温度不均匀的现象，例如反应区域(由各个凹陷部103组成的区域)的中间温度较高而边缘温度较低，因此会影响整个dPCR过程，使试剂的最终检测结果不准确。
为了解决上述问题，如图1和图2所示，该阵列基板100还包括位于第一衬底101与限定层102之间的加热电极106，加热电极106被配置为对多个凹陷部103进行加热。
加热电极106位于第一衬底101上，加热电极106可接收电信号(例如电压信号)，由此当有电流流过加热电极106时会产生热量，该热量被传导至凹陷部103中，以用于聚合酶链式反应。例如，加热电极106可以采用电阻率较大的导电材料制备，从而使该加热电极106在被提供有较小的电信号的情况下就可以产生较大的热量，以提高能量转化率。加热电极106例如可以采用透明导电材料制备，例如采用氧化铟锡(ITO)、氧化锡等制备，也可以采用其他适用的材料制备，例如金属等，本公开的实施例对此不作限制。
如图所示，多个凹陷部103在第一衬底101上的正投影位于加热电极106在第一衬底101上的正投影之内。这里，正投影是指沿垂直于第一衬底101的方向在第一衬底101上的投影。例如，如图2所示，在垂直于第一衬底101的方向上，多个凹陷部103在第一衬底101上的正投影位于加热电极106在第一衬底101上的正投影内，且加热电极106的上述正投影大于多个凹陷部103的上述正投影。通过这种方式，可以使加热电极106对每个凹陷部103进行加热。由于加热电极106的边缘散热效应，加热电极106边缘处的工作温度通常低于其中心区域的工作温度。通过使加热电极106的上述投影大于多个凹陷部103的上述投影，可以使加热电极106具有均匀温度的中心区域对应于多个凹陷部103，从而对多个凹陷部103进行加热，以避免加热电极106的边缘处(例如距边缘5mm、8mm或其他适用尺寸的区域)对凹陷部103进行加热，从而使多个凹陷部103的受热更均匀，温度一致性更好，进而有利于凹陷部103中的反应体系溶液进行有效的扩增反应。
图5示出了阵列基板100的平面俯视图。如图所示，加热电极106包括沿第一方向X(即图中的竖直方向)延伸的彼此分离的多个子部分。图中示出了五个彼此分离且绝缘的子部分，但是本公开的实施例并不限于此，还可以包括更多或更少的彼此分离的子部分，例如两个彼此分离的子部分、十个彼此分离的子部分、百个彼此分离的子部分等。本公开的实施例不限制各个子部分之间的间距，只要满足产品设计需求即可。在一个示例中，加热电极106的各个子部分之间的间距在1微米至200微米的范围内。通过为加热电极106中的各个子部分分别施加电信号，例如为各个子部分的一端施加高电压，为各个子部分的另一端施加低电压(例如接地信号)，可以使加热电极106中的彼 此分离的各个子部分流过基本相同大小的电流，并因此保持基本相同的温度，从而进一步提高加热电极106各处的温度均一性，使多个凹陷部103的受热更加均匀，温度一致性更优，进一步促进凹陷部103中的反应体系溶液的扩增反应。
在图5中，加热电极105的各个子部分示出为长条形的矩形，但是本公开的实施例并不限制加热电极106的各个子部分的形状，其可以是任意适当的形状。例如，图6示出了加热电极106的各个子部分的另一可能的平面形状。如图所示，该加热电极106包括沿第一方向X延伸的彼此分离的多个条状结构，每个条状结构的中间部分沿第二方向Y的宽度宽于该条状结构的两端部分沿第二方向Y的宽度，第二方向Y是在平行于第一衬底101的平面内垂直于第一方向X的方向。当然，加热电极106中的多个条状结构并不仅限于图6中左侧部分示出的形状，只要条状结构的形状使得其中间部分的宽度宽于两端部分的宽度即可。例如，如图6的右侧所示，加热电极106的条状结构的形状还可以是椭圆形或边缘轮廓呈折线形的矩形。
在本公开的实施例中，通过在阵列基板100中设置加热电极106(例如将加热电极106集成在第一衬底101上)，可以有效实现对阵列基板100的凹陷部103的加热，进而实现对凹陷部103的温度控制，无需外部加热设备，集成度高。通过将加热电极106设置成彼此分离的多个子部分，可以使加热电极106的各处保持基本相同的温度，从而进一步提高加热电极106各处的温度均匀性，使多个凹陷部103的受热更加均匀。另外，相比于一些需要驱动液滴移动使之依次通过多个温度区域才能够被加热的阵列基板，该阵列基板100无需对液滴进行驱动操作即可实现温度循环，操作简单，生产成本低。
返回继续参考图1和图2，该阵列基板100还包括导电层107和第一绝缘层110，该导电层107位于第一衬底101与加热电极106之间，第一绝缘层110位于导电层107与加热电极106之间，导电层107通过第一绝缘层110中的过孔112与加热电极106电连接。导电层107配置为向加热电极106施加电信号(例如电压信号)。加热电极106接收到该电信号后，可以在电信号的作用下产生热量，从而对凹陷部103进行加热。需要说明的是，第一绝缘层110还可以覆盖未被导电层107遮挡的第一衬底101的部分区域。
过孔112暴露导电层107的一部分，从而可以使加热电极106经由过孔112与导电层107电连接。过孔112的形状可以为圆柱形、圆台形等。例如，导电层107可以通过一个或多个过孔112与加热电极106电连接。当通过多个过孔112实现电连接时，可以有效减小连接电阻，降低能量损耗。当通过一个过孔112实现电连接时，可以简化生产工艺。
导电层107的数量可以为一个或多个，本公开的实施例对此不作限制。当采用多个导电层107对加热电极106施加电信号时，可以使加热电极106的不同部位同时接收该电信号，从而使得加热电极106的各个位置流过基本相同大小的电流，因此发热更加均匀。例如，当导电层107为多个时，第一绝缘层110可以包括多个过孔112，每个过孔112都暴露导电层107的一部分，从而使加热电极106通过多个过孔112与多个导电层107分别电连接。例如，多个导电层107和多个过孔112一一对应。又例如，多个过孔112的数量也可以大于多个导电层107的数量，每个导电层107通过一个或多个过孔112与加热电极106电连接。
需要说明的是，在图1和图2所示的示例中，加热电极106和导电层107位于不同层。在其他一些实施例中，加热电极106和导电层107也可以位于同一层，此时，阵列基板100中可以省略第一绝缘层110，加热电极106和导电层107通过搭接方式实现电连接。
加热电极106的电阻值大于导电层107的电阻值，从而在相同的电信号的作用下，加热电极106产生的热量较多，以对凹陷部103加热。导电层107产生的热量较少，从而减少能量损耗。例如，导电层107可以采用电阻率较小的材料，从而降低导电层107上的能量损耗。导电层107可以采用金属材料制备，金属材料例如可以为铜或铜合金、铝或铝合金等，可以为单一金属层或复合金属层，本公开的实施例对此不作限制。
在本公开的一些实施例中，加热电极106采用氧化铟锡(ITO)或氧化锡制备，导电层107采用金属材料制备。由于ITO不易氧化，因此可以防止加热电极106暴露于空气中的部分氧化，进而避免加热电极106氧化所导致的加热不均匀或功耗增大等问题。导电层107被第一绝缘层110覆盖，因此即使采用金属材料制备，也不易出现氧化的 问题。
参考图5，第一绝缘层110中的过孔112包括第一组多个过孔112a和第二组多个过孔112b。第一组过孔112a和第二组过孔112b分别位于阵列基板100的相对的两侧。导电层107包括第一组导电层1071和第二组导电层1072。第一组导电层1071与第一组过孔112a位于相同的一侧。第一组导电层1071通过第一组过孔112a与加热电极106电连接。第二组导电层1072在第一衬底101上的正投影落在加热电极106在第一衬底101上的正投影的外围，并且第二组导电层1072至少部分地包围加热电极106。第二组导电层1072通过第二组过孔112b与加热电极106电连接。通过这样的布置方式，可以使导电层107至少部分围绕加热电极106，可以减少加热电极106的热量损失，使各个凹陷部103的温度更加均匀，并且可以提高加热电极106的加热效率，从而降低功耗。
在常规的阵列基板中，通常仅通过一个导电层向加热电极施加高电压信号，并通过另一个导电层向加热电极施加低电压信号(例如接地电压)，以此在加热电极上形成例如沿第一方向的电流通路，使加热电极产生热量。由于加热电极本身具有较大的电阻值，因此在从加热电极与导电层的连接处沿与第一方向垂直的第二方向延伸的方向上会产生较大压降，使得加热电极可以分为沿第二方向分布的第一部分电极和第二部分电极。第一部分电极接收的电压信号较大，第一部分电极例如为加热电极与导电层的连接处的电极部分，第二部分电极接收的电压信号较小，第二部分电极例如为沿第二方向远离上述连接处的电极部分。相应地，该加热电极内的电流并不均匀，第一部分电极中的电流较大且产生的热量较大，第二部分电极中的电流较小且产生的热量较小。因此，当采用这样的加热电极对阵列基版中的凹陷部进行加热时，不同位置处的凹陷部达到的温度不同，最终影响凹陷部中的反应体系溶液的扩增反应，影响检测效果的准确性。
而在本公开的实施例中，第一组多个导电层1071(图中示出为两个)经由第一组过孔112a向加热电极106施加第一电压信号(例如高电压信号)，第二组多个导电层1072(图中示出为两个)经由第二组过孔112b向加热电极106施加第二电压信号(例如接地信号)，以在加热电极106上形成电流通路。通过布置这样多组导电层并且使每组包 含多个导电层，并且结合前面描述的加热电极106被划分成多个彼此分离的子部分，可以使加热电极106的各个子部分的一端(靠近第一组过孔112a的一端)同时被施加相同的第一电压信号，加热电极106的各个子部分的另一端(靠近第二组过孔112b的一端)同时被施加相同的第二电压信号，从而在该加热电极106内形成均匀的电流并且产生均匀的热量，使得各个位置处的凹陷部103达到均匀的温度，促进凹陷部103中的反应体系溶液的扩增反应，提高检测效果的准确性。
为了便于使导电层107与独立于阵列基板100的外部设备(未示出)电连接以接收电信号(例如电压信号)，阵列基版100还可以包括接触部分113(如图5所示，例如为Pad区域)，该接触部分113不被第一绝缘层110覆盖。例如，该接触部分113为尺寸较大的方块形，从而可以方便地与外部设备中的探针或电极接触连接，其接触面积大，能够稳定地接收电信号。通过这种方式，可以使阵列基版100实现即插即用，操作简单，使用方便。例如，接触部分113可以与导电层107位于同一层并且由一次构图工艺来形成。当导电层107采用金属材料制备时，可以对接触部分113进行电镀、热喷镀或真空镀等处理，从而在接触部分113的表面形成金属保护层，以防止接触部分113氧化，且不影响其导电性能。
继续参考图5，该阵列基板100包括反应区域1001和周边区域1002，周边区域1002至少部分围绕反应区域1001。在一些实施例中，在第一方向X上，周边区域1002包括分别位于反应区域1001两侧的第一子区域1002a和第二子区域1002b。在另一些实施例中，周边区域1002完全围绕反应区域1001，即周边区域1002为环状，且包围反应区域1001。在这种情形下，在第一方向X上，周边区域1002包括分别位于反应区域1001两侧的第一子区域1002a和第二子区域1002b，在第二方向Y上，周边区域1002还包括分别位于反应区域1001两侧的第三子区域和第四子区域，第一子区域1002a与第三子区域和第四子区域均连通，第二子区域1002b与第三子区域和第四子区域也均连通，从而使周边区域1002围绕在反应区域1001的周围。
如图5所示，过孔112位于周边区域1002中，加热电极106至少部分地位于反应区域1001中。在一些实施例中，反应区域1001还进一步包括功能区域1001a，凹陷部103位于功能区域1001a中。例如， 加热电极106在第一衬底101上的正投影完全覆盖反应区域1001的功能区域1001a，也即是，功能区域1001a位于加热电极106在第一衬底101上的正投影内，从而保证加热电极106能对每个凹陷部103进行加热。
需要说明的是，当在第二方向Y上，周边区域1002还包括分别位于反应区域1001的两侧的第三子区域和第四子区域时，在第三子区域和第四子区域中也可以设置多个导电层107。本公开的实施例对导电层107的数量、设置位置等不作限制。
返回继续参考图1和图2，该阵列基板100还可以包括亲水层108，该亲水层108至少覆盖每个凹陷部103的侧壁。在一些实施例中，亲水层108覆盖每个凹陷部103的侧壁。在替代的实施例中，亲水层108不仅覆盖每个凹陷部103的侧壁，还覆盖限定层102的远离第一衬底101的表面以及每个凹陷部103的底部。在凹陷部103贯穿限定层102的实施例中(即凹陷部103为通孔结构)，亲水层108覆盖凹陷部103的侧壁。在凹陷部103不完全贯穿限定层102的实施例中(即凹陷部103为盲孔结构)，亲水层108覆盖凹陷部103的侧壁和底部。亲水层108具有亲水疏油的特性。由于凹陷部103的侧壁(和底部)设置有亲水层108，从而使得凹陷部103的亲水性得到大幅提高，反应体系溶液中的液滴与该凹陷部103表面的接触角较小。在外界没有对反应体系溶液施加驱动力的情况下，反应体系溶液可以基于毛细现象而自动逐渐进入每个凹陷部103内，从而实现自动进样，并且可以避免串液。
在一些实施例中，亲水层108的材料为硅氧化物，例如二氧化硅(SiO 2)等。当然，本公开的实施例不限于此，亲水层108也可以采用其他合适的无机或有机材料制备，只要保证亲水层108远离限定层102的表面具有亲水性即可。在一些实施例中，亲水层108可以采用亲水性材料直接制备。在另一些实施例中，亲水层108可以采用不具有亲水性的材料制备，在这种情况下，需要在亲水层108的远离限定层102的表面进行亲水化处理，从而使该亲水层108远离限定层102的表面具有亲水性。若采用非亲水性材料(例如氮化硅等)制备亲水层108，可以对该非亲水性材料进行亲水化处理，例如选择采用凝胶化改性法、紫外辐射法、等离子体法等方法，以使该非亲水性材料的表面具有亲水基团，从而具有亲水性。
如图1和图2所示，该阵列基板100还可以包括位于亲水层108远离第一衬底101的一侧的第一疏水层109，亲水层108的一部分(即亲水层108的覆盖限定层102远离第一衬底101的表面的部分)位于第一疏水层109与限定层102之间。该第一疏水层109覆盖位于限定层102上的亲水层108的远离第一衬底101的表面并且延伸到该表面与凹陷部103的侧壁的交界处，从而使得该第一疏水层109限定出多个孔114。在一个示例中，限定层102限定的多个凹陷部103、遮挡层104限定的多个开口105以及第一疏水层109限定的多个孔114一一对应，并且每一个孔114在第一衬底101上的第一正投影和与该孔114对应的一个开口105在第一衬底101上的第三正投影均位于与该孔114对应的一个凹陷部103在第一衬底101上的第二正投影之内，并且第一正投影、第二正投影和第三正投影构成同心圆环，第一正投影位于第二正投影和第三正投影之间，第三正投影位于第一正投影之内，构成如图5右侧所示的同心圆环图案。也就是说，遮挡层104限定的圆形开口105尺寸最小，限定层102限定的圆形凹陷部103的尺寸最大，第一疏水层109限定的圆形孔114的尺寸介于两者之间。当然，凹陷部103、开口105以及孔114并不仅限于构成同心圆环，它们还可以构成例如同心矩形环、同心方形环、同心椭圆环、同心多边形环等。
第一疏水层109具有疏水亲油的特性，第一疏水层109的材料为树脂或硅氮化物，例如，可以为市售的型号为DL-1001C的环氧树脂。第一疏水层109也可以采用其他合适的无机或有机材料制备，只要保证第一疏水层109具有疏水性即可。在一些实施例中，第一疏水层109可以采用疏水性材料直接制备。在另一些实施例中，第一疏水层109可以采用不具有疏水性的材料制备，在这种情况下，需要对该第一疏水层109的表面进行疏水化处理，从而使该第一疏水层109的表面具有疏水性。
在本公开的实施例中，亲水层108和第一疏水层109可以共同调节反应体系溶液的液滴的表面接触角，从而使包含该阵列基板100的微流控装置实现自吸液进样和油封。在该阵列基板100中，通过设置第一疏水层109来提高凹陷部103的外部的疏水性能，通过设置亲水层108来提高凹陷部103的内部(凹陷部103的侧壁(和底部))的亲水性能，从而有利于使反应体系溶液从凹陷部103外部向凹陷部103 内部浸润，因此，在亲水层108和第一疏水层109的共同作用下，反应体系溶液更容易进入每个凹陷部103。
在一些实施例中，第一疏水层109的面积与亲水层108的面积的比值介于0.01至2.00之间。例如，第一疏水层109的面积与亲水层108的面积的比值可以是0.01，0.05，0.10，0.50，1.00，1.20，1.40，1.60，1.80，2.00等。如果第一疏水层109的面积过大，而亲水层108的面积过小，则从外部注入到微流控装置中的反应体系溶液易于附在第一疏水层109的表面上，而难以进入到凹陷部103。在本公开的实施例中，通过使第一疏水层109与亲水层108具有合适的面积比值，在亲水层108和第一疏水层109的共同作用下，有利于使反应体系溶液更容易地进入到每个凹陷部103，从而可以避免反应体系溶液的浪费，提高利用率，从而可以提高每个凹陷部103内待检测试剂的荧光发射强度，进而可以提高待检测试剂的荧光检测精度。
如图1和图2所示，该阵列基板100还可以包括第二绝缘层111，该第二绝缘层111位于加热电极106与遮挡层104之间。第二绝缘层111用于保护加热电极106，提供绝缘作用，防止液体侵蚀加热电极106，减缓加热电极106的老化，并且可以起到平坦化的作用。在凹陷部103贯穿限定层102的情况下，凹陷部103的底部暴露第二绝缘层111的部分表面，并且亲水层108覆盖凹陷部103的侧壁和第二绝缘层111的暴露表面。
在一些实施例中，第一绝缘层110和第二绝缘层111可以采用相同的绝缘材料制备，例如采用无机绝缘材料或有机绝缘材料制备。在一个示例中，第一绝缘层110和第二绝缘层111的材料包括二氧化硅或氮化硅等。
需要说明的是，虽然图中示出遮挡层104位于限定层102与第二绝缘层111之间，但是这仅是一个示例。如前所述，遮挡层104可以位于第一衬底101与限定层102之间的任意一个膜层中或者位于如后文描述的其他位置处。例如，遮挡层104可以位于第一衬底101与导电层107之间、导电层107与第一绝缘层110之间、第一绝缘层110与加热电极106之间、加热电极106与第二绝缘层111之间等。
在本公开的实施例中，通过设置具有开口105的遮挡层104，使得遮挡层104至少部分地遮挡了第一衬底101和限定层102，从而避免或 至少降低了限定层102和第一衬底101造成的背景荧光干扰，提高了凹陷部103内的待检测试剂的荧光检测精度；通过设置具有多个分离的子部分的加热电极106，并且配合优化导电层107的布置方式，提高了加热电极106的温度均一性，从而有利于凹陷部103内的反应体系溶液的扩增反应；通过设置亲水层108和第一疏水层109，使得反应体系溶液更容易进入每个凹陷部103，从而提高反应效率，避免串液。
图7示出了根据本公开另一实施例提供的阵列基板200的部分剖面图。如图所示，除了遮挡层104的设置方式以及另外还包括第三绝缘层115之外，该阵列基板200与图1和图2所示的阵列基板100基本相同。下面对阵列基板200中的遮挡层104以及第三绝缘层115进行说明，其他结构以及对应的技术效果可以参考图1和图2所示的阵列基板100，此处不再赘述。
如图所示，遮挡层104位于第一衬底101远离限定层102的一侧，也即位于第一衬底101的背面。遮挡层104限定至少一个开口105，该至少一个开口105在第一衬底101上的正投影与至少一个凹陷部103在第一衬底101上的正投影至少部分重叠，并且，遮挡层104在第一衬底101上的正投影与限定层102在第一衬底101上的正投影至少部分重叠。值得注意的是，图中仅示意性地示出了遮挡层104限定的一个开口105以及限定层102限定的一个凹陷部103，但是如前面所描述的，遮挡层104实际上限定了多个开口105，并且限定层102限定了多个凹陷部103，每个开口105与每个凹陷部103对应。在一个示例中，每个开口105在第一衬底101上的正投影的形状为圆形，每个凹陷部103在第一衬底101上的正投影的形状也为圆形，开口105的直径小于对应的一个凹陷部103的直径。在后续的光学检测过程中，激发光可以从第一衬底101的一侧经由遮挡层104的开口105入射到凹陷部103中。在第一衬底101远离限定层102的一侧设置遮挡层104，遮挡层104的布置方式不再受限于阵列基板200中的其他膜层，遮挡层104可以占据更大的面积，有利于使遮挡层104遮挡第一衬底101和限定层102的更大部分或者完全遮挡第一衬底101和限定层102，从而进一步降低甚至避免限定层102和第一衬底101产生的背景荧光，提高凹陷部103内的待检测试剂的荧光检测精度。
如图所示，该阵列基板200还包括位于遮挡层104远离第一衬底 101一侧的第三绝缘层115，该第三绝缘层115覆盖遮挡层104，以对遮挡层104提供保护，免受外部环境的影响。图中示出了第三绝缘层115为连续的膜层，并且完全填满了遮挡层104的开口105。在另一个示例中，第三绝缘层115在对应开口105的位置处断开，并且与第三绝缘层115相同材料的膜层填充遮挡层104的开口105。在又一示例中，第三绝缘层115也为连续的膜层，但没有填充遮挡层104的开口105。第一绝缘层110、第二绝缘层111以及第三绝缘层115可以采用相同的绝缘材料制备，例如采用无机绝缘材料或有机绝缘材料制备。在一个示例中，第一绝缘层110、第二绝缘层111以及第三绝缘层115的材料包括二氧化硅或氮化硅等。
图8示出了根据本公开又一实施例提供的阵列基板300的部分剖面图。如图所示，除了遮挡层104以及亲水层108的布置方式之外，该阵列基板300与图1和图2所示的阵列基板100基本相同。下面对阵列基板300中的遮挡层104以及亲水层108进行说明，其他结构以及对应的技术效果可以参考图1和图2所示的阵列基板100，此处不再赘述。
如图所示，遮挡层104包括第一部分104a，该第一部分104a位于限定层102远离第一衬底101的一侧，并且附接到限定层102的侧面和远离第一衬底101的表面上。需要说明的是，本文中诸如“A附接到B”的术语是指A与B的表面直接接触。在这里即为，遮挡层104的第一部分104a与限定层102的侧面和远离第一衬底101的表面直接接触，并且至少部分地包围限定层102。遮挡层104的第一部分104a限定多个开口105，每个开口105在第一衬底101上的正投影与对应的一个凹陷部103在第一衬底101上的正投影至少部分重叠。在一个示例中，每个开口105在第一衬底101上的正投影的形状为圆形，每个凹陷部103在第一衬底101上的正投影的形状也为圆形，开口105的直径小于对应的一个凹陷部103的直径。通过这样的布置方式，在后续的光学检测过程中，激发光可以从阵列基板300的上方经由遮挡层104的开口105直接照射到凹陷部103中的待检测试剂(即图中从上至下的方向)，从而可以提高光源的利用率，并且可以提高待检测试剂的荧光发射强度。限定层102的侧面和远离第一衬底101的表面被遮挡层104的第一部分104a完全遮挡，因此不会被激发光照射到。
虽然上述实施例是以限定层102和遮挡层104的第一部分104a为两个独立的膜层结构来描述的，但是如前所述，限定层102和遮挡层104的第一部分104a也可以是同一个膜层结构。在限定层102和遮挡层104的第一部分104a是同一个膜层结构的实施例中，例如通过对限定层102的侧面和远离第一衬底101的表面(即上表面)进行物理或化学处理，使其不透光，从而使限定层102的侧面和上表面充当遮挡层104的第一部分104a；而限定层102的剩余未被处理的部分继续起着限定层102的作用。
亲水层108设置在遮挡层104的第一部分104a的远离第一衬底101的表面上，并且覆盖遮挡层104的第一部分104a的表面以及至少覆盖每个凹陷部103的侧壁。亲水层108具有亲水疏油的特性。由于亲水层108至少覆盖凹陷部103的侧壁，因此可以提高凹陷部103的亲水性，在外界没有对反应体系溶液施加驱动力的情况下，反应体系溶液可以基于毛细现象而自动逐渐进入每个凹陷部103内，从而实现自动进样，并且可以避免串液。
图9示出了根据本公开再一实施例提供的阵列基板400的部分剖面图。如图所示，除了遮挡层104以及亲水层108的布置方式之外，该阵列基板400与图1和图2所示的阵列基板100基本相同。下面对阵列基板400中的遮挡层104以及亲水层108进行说明，其他结构以及对应的技术效果可以参考图1和图2所示的阵列基板100，此处不再赘述。
如图所示，遮挡层104包括第一部分104a和第二部分104b。第一部分104a位于限定层102远离第一衬底101的一侧，并且附接到限定层102的侧面和远离第一衬底101的表面上；第二部分104b位于第二绝缘层111与限定层102之间，并且附接到限定层102的靠近第一衬底101的表面(即底部表面)上。第一部分104a与第二部分104b共同包围限定层102。遮挡层104的第一部分104a限定多个开口105，每个开口105在第一衬底101上的正投影与对应一个凹陷部103在第一衬底101上的正投影至少部分重叠；遮挡层104的第二部分104b限定多个开口105，每个开口105在第一衬底101上的正投影与对应一个凹陷部103在第一衬底101上的正投影至少部分重叠。通过这样的布置方式，在后续的光学检测过程中，激发光既可以从阵列基板300的 上方经由遮挡层104的第一部分104a的开口105直接照射到凹陷部103中的待检测试剂(即图中从上至下的方向)，也可以从阵列基板300的下方经由遮挡层104的第二部分104b的开口105照射到凹陷部103(即图中从下至上的方向)，从而可以根据需要灵活布置发射激发光的光源的位置。由于限定层102的所有表面(上表面、下表面、各个侧表面)均被遮挡层104完全遮挡，因此不会被激发光照射到。
在一个示例中，遮挡层104的第一部分104a限定的开口105在第一衬底101上的正投影与遮挡层104的第二部分104b限定的开口105在第一衬底101上的正投影完全重叠。例如，遮挡层104的第一部分104a限定的开口105在第一衬底101上的正投影的形状为圆形，并且遮挡层104的第二部分104b限定的开口105在第一衬底101上的正投影的形状也为圆形，第一部分104a和第二部分104b限定的开口大小完全相同。在另一个示例中，凹陷部103在第一衬底101上的正投影的形状为圆形，遮挡层104的第一部分104a限定的开口105在第一衬底101上的正投影的形状为圆形，并且遮挡层104的第二部分104b限定的开口105在第一衬底101上的正投影的形状也为圆形，第一部分104a和第二部分104b限定的开口大小完全相同并且均小于凹陷部103的大小。
虽然上述实施例是以限定层102以及遮挡层104的第一部分104a和第二部分104b为独立的膜层结构来描述的，但是如前所述，限定层102以及遮挡层104的第一部分104a和第二部分104b也可以是同一个膜层结构。在限定层102以及遮挡层104的第一部分104a和第二部分104b是同一个膜层结构的实施例中，例如通过对限定层102的侧面、远离第一衬底101的表面(即上表面)和靠近第一衬底101的表面(即下表面)进行物理或化学处理，使其不透光，从而使限定层102的侧面、上表面和下表面(即限定层102的所有外表面)充当遮挡层104的第一部分104a和第二部分104b；而限定层102的剩余未被处理的部分(例如限定层102的被外表面包裹的内部部分)继续起着限定层102的作用。
亲水层108设置在遮挡层104的第一部分104a的远离第一衬底101的表面上，并且覆盖遮挡层104的第一部分104a的表面以及至少覆盖每个凹陷部103的侧壁。亲水层108具有亲水疏油的特性。由于亲水 层108至少覆盖凹陷部103的侧壁，因此可以提高凹陷部103的亲水性，在外界没有对反应体系溶液施加驱动力的情况下，反应体系溶液可以基于毛细现象而自动逐渐进入每个凹陷部103内，从而实现自动进样，并且可以避免串液。
根据本公开的另一方面，提供了一种微流控装置，该微流控装置包括在前面任一个实施例中描述的阵列基板，下文以微流控装置包括阵列基板100为例来进行介绍。需要说明的是，本文提供的阵列基板不仅可以用于微流控领域，还可以用于任何其他适当的领域，诸如显示领域、汽车领域等。
图10示出了微流控装置500，该微流控装置500包括阵列基板100、与该阵列基板100对盒的对置基板2000以及位于阵列基板100和对置基板2000之间的间隔。对置基板2000包括第二衬底201以及第二疏水层202，第二疏水层202位于第二衬底201靠近第一衬底101的一侧。对置基板2000包括至少一个贯穿第二衬底201和第二疏水层202的通孔。在一些实施例中，微流控装置500的尺寸为1.5厘米*1.5厘米。
在一个示例中，第一衬底101和第二衬底201均为玻璃衬底。第二衬底201与第一衬底101相对设置，起保护、支撑、隔离等作用。该微流控装置500采用玻璃基结合半导体工艺的微加工方式制备，从而可以实现大规模批量生产，可以大幅降低相应的生产成本。需要说明的是，本公开的多个实施例中，第一衬底101和第二衬底201还可以采用其他合适的材料，本公开的实施例对此不作限制。
在一些实施例中，第一衬底101的形状和第二衬底201的形状均为矩形。在一些示例中，第一衬底101的尺寸为3.2厘米*4.5厘米，第二衬底201的尺寸为3.2厘米*3厘米。在一些实施例中，第二衬底201的尺寸小于第一衬底101的尺寸，第二衬底201覆盖在反应区域1001上，并且第二衬底201在第一衬底101上的正投影可以与反应区域1001完全重叠。需要说明的是，本公开的实施例不限于此，在其他一些示例中，第二衬底201的尺寸也可以与第一衬底101的尺寸相同，此时，第二衬底201覆盖在反应区域1001和周边区域1002上。例如，第二衬底201在第一衬底101上的正投影可以与第一衬底101完全重合。
第二疏水层202具有疏水亲油的特性，并且位于第二衬底201面向第一衬底101的一侧。通过设置第二疏水层202，可以使反应体系溶 液更容易进入每个凹陷部103中。在一个示例中，第二疏水层202的材料包括SiN x。在替代的一个示例中，第二疏水层202为吸光层，该吸光层的材料包括TiO 2和TiON中的至少一种。通过将第二疏水层202设计成吸光层，可以将某些未被利用的激发光进一步吸收掉，避免这些激发光以某种方式照射到第一衬底101和/或限定层102上，从而可以进一步降低第一衬底101和/或限定层102的荧光干扰。
对置基板2000包括至少一个贯穿第二衬底201和第二疏水层202的通孔。如图所示，对置基板2000包括一个进样孔203和一个出样孔205，进样孔203和出样孔205均贯穿第二衬底201和第二疏水层202。在一个示例中，反应体系溶液可以通过微量注射泵或通过移液枪注射到进样孔203，然后通过自吸液进入到各个凹陷部103中。在一些实施例中，结合图5，反应区域1001还包括非功能区域1001b，进样孔203和出样孔205均位于非功能区域1001b，且位于功能区域1001a的不同侧，例如对称分布于功能区域1001a的不同侧。如图5所示，在第一方向X上，进样孔203和出样孔205分别位于功能区域1001a的两侧。例如，进样孔203和出样孔205关于第二方向Y对称分布，从而可以使反应体系溶液在微流控装置500内的流动更均匀，便于反应体系溶液进入到各凹陷部103中。当然，本公开的实施例不限于此，进样孔203和出样孔205还可以关于第一方向X或其他任意的方向对称分布。需要说明的是，进样孔203和出样孔205也可以均位于功能区域1001a。
继续参考图10，该微流控装置500还包括多个封框胶204。多个封框胶204设置在周边区域1002中，且位于阵列基板100和对置基板2000之间。多个封框胶204被配置为保持阵列基板100和对置基板2000之间的间隔，从而为反应体系溶液的流动提供空间。在一些实施例中，一部分封框胶204还可以设置在反应区域1001中，例如分散设置于反应区域1001的多处，从而提高微流控装置500的抗压强度，避免反应区域1001受到外力而使微流控装置500损坏。在一些实施例中，多个封框胶204的尺寸和形状可以彼此相同，从而提高微流控装置500的厚度均一性。在替代的实施例中，多个封框胶204的尺寸和形状也可以根据微流控装置500可能的受力情况进行设置，例如在微流控装置500的周边以及中心位置，封框胶204的尺寸较大，而在其余位置，封框胶204的尺寸较小。
在一些实施例中，在垂直于第一衬底101的方向上，封框胶204的高度大于限定层102的高度，第一衬底101、限定层102以及封框胶204共同限定反应体系溶液的进样流道和出样流道，从而保证反应体系溶液能够移动至每个凹陷部103，并且使未进入凹陷部103的反应体系溶液流出阵列基板100和对置基板2000之间的空间。在一些实施例中，封框胶204的高度比限定层102的高度大30％或50％，两者的具体比例关系例如可以根据实际需求而定，本公开的实施例对此不作限制。
封框胶204的材料可以为可固化有机材料，例如热固化材料或光固化材料，例如，紫外(UV)硬化型的丙烯树脂或其他合适的材料。封框胶204的形状可以为圆球状，此时，可以通过封框胶204对阵列基板100和对置基板2000进行固化封装，使阵列基板100和对置基板2000对盒。这样，封框胶204可以控制阵列基板100和对置基板2000之间的间距。本公开的实施例包括但不限于此，封框胶204的形状还可以为柱状、椭球状等任意适用的形状。
在一些实施例中，微流控装置500还可以包括第一温度传感器(图中未示出)。第一温度传感器设置在第一衬底101的远离第二衬底201的一侧，且位于反应区域1001。第一温度传感器被配置为检测反应区域1001的温度。例如，反应区域1001处的温度需要保持在预定温度(例如95℃、55℃或72℃等)，此时，第一温度传感器可以实时检测反应区域1001处的温度，然后通过加热电极106实时调节反应区域1001处的温度，使反应区域1001的温度保持在预定温度，从而防止反应区域1001的温度过高或过低而影响扩增反应。第一温度传感器可以为各种类型的温度传感器，包括但不限于接触式温度传感器或非接触式温度传感器等，例如热电偶温度传感器或红外温度传感器等。
本公开实施例提供的微流控装置500可以与前面各个实施例描述的阵列基板具有基本相同的技术效果，因此，出于简洁的目的，此处不再进行重复描述。
根据本公开的又一方面，提供了一种微流控系统，该微流控系统包括控制装置和在前面任一个实施例中描述的微流控装置500。该控制装置与微流控装置500电连接，并且配置为控制微流控装置500的温度。该微流控系统有助于使液滴自动进入微流控装置500的各个凹陷部103，可以实现有效进样并避免串液，可以有效实现对微流控装置 500的凹陷部103的温度控制，无需对液滴进行驱动操作即可实现温度循环，也无需外部加热设备，其集成度高，操作简单，生产成本低。
图11示出了根据本公开的实施例提供的一种微流控系统600的示意框图。如图11所示，微流控系统600包括微流控装置500、控制装置620、以及电源装置630，该电源装置630向微流控装置500和控制装置620提供信号电压或驱动电压等。控制装置620与微流控装置500电连接，且配置为向微流控装置500施加电信号以驱动微流控装置500的加热电极106。微流控装置500的多个凹陷部103可容纳反应体系溶液。控制装置620向微流控装置500的加热电极106施加电信号，使加热电极106释放热量，从而控制微流控装置500的功能区域的温度，从而使反应体系溶液进行扩增反应。例如，控制装置620可以实现为通用或专用的硬件、软件或固件等，例如还可以包括中央处理器(CPU)、嵌入式处理器、可编程逻辑控制器(PLC)等，本公开的实施例对此不作限制。
在一些实施例中，微流控系统600可选地还可以包括第二温度传感器650。例如，当微流控装置500不包括第一温度传感器时，则需要在微流控系统600中设置第二温度传感器650，并且该第二温度传感器650需要设置在与微流控装置500中的第一温度传感器基本相同的位置，从而实现检测温度的功能。例如，该第二温度传感器650设置在微流控装置500的第一衬底101远离第二衬底201的一侧，且位于阵列基板100的反应区域1001，该第二温度传感器650配置为检测微流控装置500的反应区域1001的温度。第二温度传感器650可以为各种类型的温度传感器，包括但不限于接触式温度传感器或非接触式温度传感器等，例如热电偶温度传感器或红外温度传感器等。需要说明的是，在其他一些实施例中，当微流控装置500包括第一温度传感器时，包括该微流控装置500的微流控系统600就无需再设置第二温度传感器650了。
微流控系统600还可以包括光学单元640，该光学单元640配置为对微流控装置500进行光学检测。在一些实施例中，该光学单元640包括荧光检测装置，该荧光检测装置被配置为对多个凹陷部103内的待检测试剂进行荧光检测。例如，该荧光检测装置可以包括荧光光源和图像传感器(例如电荷耦合器件(CCD)图像传感器)。该光学单元 640例如还可以包括图像处理装置，该图像处理装置被配置为对荧光检测装置输出的检测图片进行处理。例如，该图像处理装置可以包括中央处理器(CPU)或图形处理器(GPU)等。例如，控制装置620还被配置为控制荧光检测装置和图像处理装置执行相应的功能。
该微流控系统600的工作原理和过程描述如下。
首先配置反应体系溶液。例如，反应体系溶液可以包括细胞裂解液和采用DNA裂解酶断裂后的DNA片段样本溶液和PCR扩增试剂。在一个示例中，假设需要检测的DNA为表皮生长因子受体(EGFR)基因第19号外显子，相应地，PCR扩增试剂包含EGFR基因第19号外显子特异性PCR扩增引物。例如，反应体系溶液的体积为20微升，反应体系溶液包括10微升的MIX试剂(MIX试剂包括Taq酶、dNPTs和MgCl2)、上游引物0.6微升(10毫摩(mM))、下游引物0.6微升(10mM)、7.8微升的水和充分稀释后的模板脱氧核糖核酸(DNA)1微升，以保证每个微反应室内的模板DNA的数量小于或等于1。
然后，在微流控装置500的进样孔203装上聚四氟乙烯接头和硅胶管，将上述配置好的反应体系溶液通过微量注射泵或通过移液枪注射到进样孔203，反应体系溶液通过聚四氟乙烯接头和硅胶管进入进样孔203，然后在亲水层108和第一疏水层109的相互配合下通过自吸液使反应体系溶液进入到各个凹陷部103中。
接下来采用三步法dPCR进行热循环扩增过程。将油封好的微流控装置500放到微流控系统600的芯片载台上，并通过夹具固定，使电极和微流控装置500的导电层107电连接。通过例如参数设置按钮进行参数设置，循环参数为95℃变性15秒，55℃退火45秒，72℃延伸45秒，总共设置30个热循环。例如，还可以设置95℃预变性5分钟。微流控装置500中含有模板DNA的微反应室中的液滴会进行PCR扩增反应，而没有模板DNA的微反应室中的液滴则作为对照组。
需要说明的是，在进行PCR扩增前，可以用质量分数为0.2％的牛血清白蛋白(BSA)溶液注满凹陷部103，浸泡1小时，以减少凹陷部103的内表面对PCR试剂和样品模板的吸附，提高反应效率和检测准确性。然后，利用微泵将BSA溶液抽取干净，并将反应体系溶液注入凹陷部103，再用油相液封。油相液封可以利用矿物油、液体石蜡、棕榈酸异丙酯后月桂酸丁酯、全氟烷类油等密封进样孔203和出样孔205， 防止反应体系溶液挥发。
在扩增30个循环之后，凹陷部103内的反应体系溶液经过聚合酶链式反应之后变为待检测试剂。将微流控装置500取出，并通过荧光显微镜观测该微流控装置500，激发波长例如可以为450nm～480nm，从而得到荧光光谱图。在一个示例中，当待检测试剂包含EGFR基因突变的第19号外显子时，由于待检测试剂中包括EGFR基因突变的第19号外显子的特异性PCR扩增引物，从而在PCR扩增引物的作用下，突变的第19号外显子被大幅扩增，从而待检测试剂呈现阳性结果，即至少部分的待检测试剂发生荧光反应。在另一个示例中，当待检测试剂不包含EGFR基因突变的第19号外显子时，则待检测试剂呈现阴性结果，即待检测试剂没有发生荧光反应。由此，可以实现EGFR基因第19号外显子的检测。
本公开实施例提供的微流控系统600可以与前面各个实施例描述的阵列基板具有基本相同的技术效果，因此，出于简洁的目的，此处不再进行重复描述。
根据本公开的再一方面，提供了一种荧光检测方法。图12示出了根据本公开的实施例提供的荧光检测方法700的流程图，图13示出了根据本公开的实施例提供的微流控装置500的荧光检测过程的示意图。下面结合图12和图13来描述该荧光检测方法700。
S701：将待检测试剂容纳在微流控装置的至少一个凹陷部中。
在一个示例中，将配置好的反应体系溶液注射到微流控装置500的进样孔203中，反应体系溶液在亲水层108和第一疏水层109的相互配合下通过自吸液而进入到微流控装置500的各个凹陷部103中。每个凹陷部103内的反应体系溶液进行聚合酶链式反应之后，也即完成扩增反应之后，形成上述待检测试剂。
S702：使光源发射的第一波长的光通过遮挡层的至少一个开口照射到至少一个凹陷部。
如图13所示，荧光检测装置300包括光源系统(未示出)，该光源系统发射第一波长的光301。第一波长的光301经由遮挡层104的多个开口105照射到限定层102限定的对应的多个凹陷部103中，从而激发各个凹陷部103内的待检测试剂发射荧光。图中示出的第一波长的光301从下向上入射，这是因为遮挡层104位于限定层102的下方。 当遮挡层104位于限定层102的上方时(如图8和图9所示)，第一波长的光301也可以从上向下入射。另外，需要说明的是，光源系统可以集成在荧光检测装置300中，也可以独立于荧光检测装置300，本公开的实施例对此不作限制。
S703：检测待检测试剂发射的第二波长的光。
在一个示例中，凹陷部103内的待检测试剂经第一波长的光301激发后，发射第二波长的光302，该第二波长大于第一波长。例如，第一波长的光301可以为蓝光，第二波长的光302可以为绿光；或者，第一波长的光301可以为黄光，第二波长的光302可以为红光。该荧光检测装置300例如可以包括荧光光源和图像传感器(例如电荷耦合器件(CCD)图像传感器)。图像处理装置被配置为对荧光检测装置300输出的检测图片进行处理。例如，该图像处理装置可以包括中央处理器(CPU)或图形处理器(GPU)等。
图14A示出了常规技术中不包括遮挡层的微流控装置的荧光图片，图14B示出了根据本公开的实施例提供的微流控装置500的荧光图片。图14A中的每个圆点表示微流控装置的凹陷部103'。从图14A可以看出，各个凹陷部103'及其周围的区域呈现基本相同的颜色。这是因为该常规的微流控装置中没有设置遮挡层，当激发光照射凹陷部时，不仅凹陷部内的待检测试剂被激发发射出荧光，该微流控装置中的衬底和限定层也被激发发射出荧光。相比于通常是微量体积的待检测试剂，该微流控装置中的衬底和限定层造成的背景荧光极大地影响了凹陷部内的待检测试剂的荧光检测精度，使得无法得到准确的检测结果。因此，呈现出如图14A所示的几乎全部区域均发射荧光的现象。
图14B中的每个圆点表示根据本公开实施例提供的微流控装置500的凹陷部103。从图14B可以看出，各个凹陷部103呈现的颜色及其周围区域呈现的颜色差异性非常大，且对比度非常明显。各个凹陷部103呈现比较明亮的颜色，而周围区域呈现黑色。这是因为在微流控装置500中设置了遮挡层104，遮挡层104在第一衬底101上的正投影与限定层102在第一衬底101上的正投影至少部分重叠，也就是说遮挡层104遮挡了限定层102的至少一部分或者全部，并且遮挡层104在第一衬底101上的正投影与第一衬底101本身也必然至少部分地重叠。当第一波长的光301经由遮挡层104的开口105照射到凹陷部103 时，遮挡层104可以遮挡第一衬底101和限定层102。因此，遮挡层104不仅可以避免限定层102被第一波长的光301照射到，还可以阻挡被第一波长的光301照射的第一衬底101发射出的荧光透射穿过遮挡层104。因此，第一波长的光301仅能经由开口105照射到凹陷部103，激发凹陷部103内的待检测试剂发射荧光，从而使得图14B中对应凹陷部103的位置呈现比较明亮的颜色，而除凹陷部103以外的区域呈现黑色。因此，通过这样的荧光检测方法，可以减少甚至避免第一衬底101和限定层102造成的荧光干扰，使得凹陷部103内的待检测试剂发出的荧光信号能够被探测器准确识别，从而可以更灵敏、更准确地识读反应信号，提高待检测试剂的荧光检测精度，为后续核酸扩增反应的数据分析提供图像数据支持。另外，通过这样的检测方法，可以实现更清晰的微孔阵列成像，减少假阳性造成的检测误差，并且能够很好地避免多通道荧光信号检测过程中的不同通道之间的干扰。
本公开的再一方面提供了一种制造微流控装置500的方法800，该微流控装置500可以包括在前面任一个实施例中描述的阵列基板。下面以微流控装置500包括阵列基板100为例，来简单地描述该方法步骤。
步骤801：提供第一衬底101。第一衬底101可以由任何合适的材料制成，在一个示例中，第一衬底101由玻璃制成。
步骤802：在大约240℃下，在第一衬底101上形成导电膜层。在一个示例中，在第一衬底101上依次沉积厚度为
Figure PCTCN2021080444-appb-000001
的钼(Mo)层、厚度为
Figure PCTCN2021080444-appb-000002
的铝钕(AlNd)层以及厚度为
Figure PCTCN2021080444-appb-000003
的钼(Mo)层以形成导电膜层。对该导电膜层进行图案化，例如曝光、显影、刻蚀等，形成导电层107。
步骤803：在大约200℃下，在导电层107上沉积第一绝缘膜层，对该第一绝缘膜层进行构图，以形成覆盖导电层107的第一绝缘层110。在一个示例中，第一绝缘层110为厚度约为
Figure PCTCN2021080444-appb-000004
的SiO 2层。
步骤804：对第一绝缘层110进行构图，以形成贯穿第一绝缘层110的至少一个过孔112，该至少一个过孔112暴露导电层107的一部分。在一个示例中，在干刻机中对第一绝缘层110进行刻蚀以形成过孔112，具体的工艺过程描述如下：在压强约为150mtorr、功率约为800w、O 2的体积流量约为400sccm(standard cubic centimeter per  minute)的条件下刻蚀10s；在压强约为60mtorr、功率约为800w、CF 4和O 2的气体体积流量比值约为200:50的条件下刻蚀200s；在压强约为130mtorr、功率约为800w、O 2和CF 4的气体体积流量比值约为400:40的条件下刻蚀30s；以及在压强约为60mtorr、功率约为800w、CF 4和O 2的气体体积流量比值约为200:50的条件下刻蚀160s。
步骤805：在第一绝缘层110远离第一衬底101的一侧沉积一层导电膜层，然后对该导电膜层进行曝光、显影、刻蚀、剥离等工序以形成图案化的加热电极106。在一个示例中，加热电极106的材料为ITO。在一个示例中，加热电极106包括彼此分离的多个子部分。
步骤806：在加电极106远离第一衬底101的一侧沉积第二绝缘膜层，对该第二绝缘膜层进行图案化，以形成至少部分地覆盖加热电极106的第二绝缘层111。在一个示例中，第二绝缘层111的材料为SiO 2。在另一个示例中，第二绝缘层111包括依次层叠的厚度约为
Figure PCTCN2021080444-appb-000005
的SiO 2层和厚度约为
Figure PCTCN2021080444-appb-000006
的SiN x层。
步骤807：在第二绝缘层111远离第一衬底101的一面涂覆遮挡膜层，对该遮挡膜层进行图案化，以形成限定有开口105的遮挡层104。在一个示例中，形成遮挡层104的具体步骤可以包括：在压强为30Kpa的条件下，在第二绝缘层111远离第一衬底101的一面旋涂遮挡膜层，旋涂的速度约为380转/分钟，旋涂时间约为7秒。然后在90℃下对旋涂后的遮挡膜层进行预固化120秒。接着，通过掩模板对遮挡膜层进行曝光、显影、刻蚀，显影时间约为75秒。最后，在230℃下对刻蚀后的遮挡膜层进行约为20分钟的后固化，形成限定有开口105的遮挡层104。遮挡层104的厚度例如在0.6-2.4微米的范围内，例如2微米。在一个示例中，形成遮挡层104的材料包括铬、氧化铬、黑色树脂。
步骤808：在遮挡层104远离第一衬底101的一侧涂覆限定膜层，对该限定膜层进行图案化，以形成限定有多个凹陷部103的限定层102。在一个示例中，形成限定层102的工艺过程描述如下：首先在30Kpa压强下，在遮挡层104远离第一衬底101的表面以300转/分钟的速度旋涂光学胶，旋涂时间约为10秒，然后在90℃的温度下，对光学胶固化120秒。重复上述过程两次，以得到限定膜层。接着，通过掩模板对限定膜层进行曝光，然后利用显影液对曝光后的限定膜层显影100秒，然后刻蚀。在230℃的温度下，将刻蚀后的限定膜层固化30分钟， 最后得到限定多个凹陷部103的限定层102。限定层102的材料包括光刻胶。遮挡层104的每个开口105在第一衬底101上的正投影与限定层102的一个对应的凹陷部103在第一衬底101上的正投影至少部分重叠，并且，遮挡层104在第一衬底101上的正投影与限定层102在第一衬底101上的正投影至少部分重叠。在一个示例中，限定层102的凹陷部103为圆柱体，凹陷部103的底部直径为50微米，深度在40至50微米之间，相邻两个凹陷部103的圆心之间的距离为100微米。
步骤809：在200℃下，在限定层102远离第一衬底101的表面上沉积一层绝缘膜层，对该绝缘膜层进行曝光、显影、刻蚀，以形成图案化层。以0.4％的KOH溶液处理该图案化层约15分钟，以对该图案化层进行亲水修饰，从而形成亲水层108。亲水层108覆盖限定层102的远离第一衬底101的表面，并且至少覆盖每个凹陷部103的侧壁。在一个示例中，亲水层108为厚度约为
Figure PCTCN2021080444-appb-000007
的SiO 2层。
步骤810：在亲水层108远离第一衬底101的表面上沉积一层绝缘膜层，对该绝缘膜层进行曝光、显影、刻蚀，以形成第一疏水层109。在一个示例中，形成第一疏水层109的过程如下：在等离子体增强化学气相沉积(Plasma Enhanced Chemical Vapor Deposition，PECVD)设备中，在温度约为200℃、功率约为600W、压强约为1200mtorr、以及PECVD设备中的等离子体反应增强靶材与待沉积样品之间的距离约为1000mils下，向反应腔室中通入SiH 4(体积流量为110sccm)、NH 3(体积流量为700sccm)以及N 2(体积流量为2260sccm，通入时间为100秒)，以在亲水层108远离第一衬底101的表面上沉积厚度为
Figure PCTCN2021080444-appb-000008
的SiN x膜层，对该SiN x膜层进行曝光、显影、刻蚀，以形成第一疏水层109。
步骤811：对已完成亲疏水处理的阵列基板100进行封装。
步骤812：提供第二衬底201。第二衬底201可以由任何合适的材料制成，在一个示例中，第二衬底201由玻璃制成。
步骤813：在第二衬底201靠近第一衬底101的一面沉积膜层，对该膜层进行处理，以形成第二疏水层202，该第二疏水层202是厚度约为
Figure PCTCN2021080444-appb-000009
的TiO 2层。在一个示例中，第二疏水层202由吸光材料制成，该吸光材料包括TiO 2和TiON中的至少一种。在另一个示例中，该第二疏水层202由SiN x形成。第二衬底201和第二疏水层202构成与阵 列基板100对置的对置基板2000。
步骤814：对第二衬底201和第二疏水层202进行打孔，以形成贯穿第二衬底201和第二疏水层202的至少一个进样孔203和至少一个出样孔205。在一个示例中，至少一个进样孔203和至少一个出样孔205的直径在0.6毫米至1.2毫米之间。
步骤815：利用封框胶将阵列基板100和对置基板2000进行固化封装，并且限定阵列基板100和对置基板2000之间的间隔。
需要说明的是，该制造方法还可以包括更多的步骤，这可以根据实际需求而定，本公开的实施例对此不作限制。该制造方法实现的技术效果可以参考上文中关于阵列基板100和微流控装置500的描述，此处不再赘述。
当该微流控装置500包括图7示出的阵列基板200时，该微流控装置500的制造方法与上述方法800基本相同，只是步骤顺序略有差异。按照上述步骤801-806、步骤808-811依次制备第一衬底101、导电层107、第一绝缘层110、加热电极106、第二绝缘层111、限定层102和凹陷部103、亲水层108、第一疏水层109以及封装，即省略步骤807(即省略遮挡层104的制备步骤)。在完成封装之后，将形成有上述各个膜层的阵列基板翻转，在第一衬底101背离限定层102的一面涂覆遮挡膜层，对该遮挡膜层进行图案化，以形成限定有开口105的遮挡层104。在一个示例中，形成遮挡层104的具体步骤可以包括：在压强为30Kpa的条件下，在第二绝缘层111远离第一衬底101的一面旋涂遮挡膜层，旋涂的速度约为380转/分钟，旋涂时间约为7秒。然后在90℃下对旋涂后的遮挡膜层进行预固化120秒。接着，通过掩模板对遮挡膜层进行曝光、显影、刻蚀，显影时间约为75秒。最后，在230℃下对刻蚀后的遮挡膜层进行约为20分钟的后固化，形成限定有开口105的遮挡层104。遮挡层104的每个开口105在第一衬底101上的正投影与限定层102的一个对应的凹陷部103在第一衬底101上的正投影至少部分重叠，并且，遮挡层104在第一衬底101上的正投影与限定层102在第一衬底101上的正投影至少部分重叠。遮挡层104的厚度例如在0.6-2.4微米的范围内，例如2微米。在一个示例中，形成遮挡层104的材料包括铬、氧化铬、黑色树脂。
然后，在约200℃下，在遮挡层104远离第一衬底101的一面沉积 第三绝缘膜层，对该第三绝缘膜层进行图案化，以形成第三绝缘层115。该第三绝缘层115对遮挡层104具有保护作用。在一个示例中，第三绝缘层115为厚度约为
Figure PCTCN2021080444-appb-000010
的SiO 2。
最后，按照上述步骤812-815继续制备对置基板2000，并且对阵列基板200和对置基板2000进行固化封装，从而制备完成包括阵列基板200的微流控装置500。
当该微流控装置500包括图8示出的阵列基板300时，该微流控装置500的制造方法与上述方法800基本相同，只是将步骤807和步骤808的顺序调换。即，按照上述步骤801-806的顺序依次制备第一衬底101、导电层107、第一绝缘层110、加热电极106、第二绝缘层111之后，接着按照步骤808在第二绝缘层111远离第一衬底107的表面上制备限定有多个凹陷部103的限定层102。然后在限定层102远离第一衬底101的表面上制备限定有开口105的遮挡层104，制备工艺与前述步骤807描述的相同。所形成的遮挡层104覆盖限定层102的侧面和远离第一衬底101的表面。最后，按照步骤809-815继续完成后续的制备，以制备完成包括阵列基板300的微流控装置500。
当该微流控装置500包括图9示出的阵列基板400时，该微流控装置500的制造方法与上述方法800基本相同，只是在步骤808和步骤809之间再另外添加一个步骤。即，按照上述步骤801-808依次制备第一衬底101、导电层107、第一绝缘层110、加热电极106、第二绝缘层111、遮挡层104以及限定层102。在步骤808中，制备限定层102的一个示例的工艺过程如下：首先在30Kpa压强下，在遮挡层104远离第一衬底101的表面以200转/分钟的速度旋涂光学胶，旋涂时间约为10秒，然后在90℃的温度下，对光学胶固化120秒。接着，通过掩模板对光学胶进行曝光，然后利用显影液对曝光后的光学胶显影240秒，并且对其进行刻蚀。在230℃的温度下，将刻蚀后的光学胶固化30分钟，最后得到限定多个凹陷部103的限定层102。限定层102的材料包括光刻胶。
在制备完成限定层102之后，在限定层102远离第一衬底101的表面上再次制备限定有开口105的遮挡层104，制备方法与上述步骤807中描述的相同。所形成的遮挡层104覆盖限定层102的侧面和远离第一衬底101的表面。最后，按照步骤809-815继续完成后续的制备， 以制备完成包括阵列基板400的微流控装置500。也就是说，在制备包括阵列基板400的微流控装置500时，需要在制备限定层102的工艺之前和之后分两次制备遮挡层104。
本公开的再一方面提供了一种微流控装置500的使用方法900。该使用方法900可以包括以下步骤：
步骤901：使反应体系溶液通过微流控装置500的进样孔203进入微流控装置500的多个凹陷部103；
步骤902：向微流控装置500的导电层107施加电信号，以通过导电层107驱动加热电极106对多个凹陷部103加热。
在一些实施例中，该使用方法900还包括：对多个凹陷部103降温，使多个凹陷部103的温度变化，以使多个凹陷部103中的反应体系溶液进行包括变性阶段、退火阶段和延伸阶段的温度循环。例如，可以采用风冷设备对其进行降温，结构简单，易于实现。
需要说明的是，该使用方法900还可以包括更多的步骤，这可以根据实际需求而定，本公开的实施例对此不作限制。
在本说明书的描述中，参考术语“一个实施例”、“另一个实施例”等的描述意指结合该实施例描述的具体特征、结构、材料或者特点包含于本公开的至少一个实施例中。在本说明书中，对上述术语的示意性表述不必须针对的是相同的实施例或示例。而且，描述的具体特征、结构、材料或者特点可以在任一个或多个实施例或示例中以合适的方式结合。此外，在不相互矛盾的情况下，本领域的技术人员可以将本说明书中描述的不同实施例或示例以及不同实施例或示例的特征进行结合和组合。
除非另外定义，本公开使用的技术术语或者科学术语应当为本公开所属领域内具有一般技能的人士所理解的通常意义。本公开中使用的“第一”、“第二”以及类似的词语并不表示任何顺序、数量或者重要性，而只是用来区分不同的组成部分。“包括”或者“包含”等类似的词语意指出现该词前面的元件或者物件涵盖出现在该词后面列举的元件或者物件及其等同，而不排除其他元件或者物件。“连接”或者“相连”等类似的词语并非限定于物理的或者机械的连接，而是可以包括电性的连接，不管是直接的还是间接的。“上”、“下”、“左”、“右”等仅用于表示相对位置关系，当被描述对象的绝对位 置改变后，则该相对位置关系也可能相应地改变。
如本领域技术人员将理解的，尽管在附图中以特定顺序描述了本公开中方法的各个步骤，但是这并非要求或者暗示必须按照该特定顺序来执行这些步骤，除非上下文另有明确说明。附加的或可替换的，可以将多个步骤合并为一个步骤执行，以及/或者将一个步骤分解为多个步骤执行。此外，在步骤之间可以插入其他方法步骤。插入的步骤可以表示诸如本文所描述的方法的改进，或者可以与该方法无关。此外，在下一步骤开始之前，给定步骤可能尚未完全完成。
以上所述，仅为本公开的具体实施方式，但本公开的保护范围并不局限于此。任何熟悉本技术领域的技术人员在本公开揭露的技术范围内，可轻易想到变化或替换，都应涵盖在本公开的保护范围之内。因此，本公开的保护范围应以所述权利要求的保护范围为准。

Claims (29)

  1. 一种阵列基板，包括至少一个凹陷部，
    其中，所述阵列基板位于一平面内，所述至少一个凹陷部在所述平面上的正投影的面积与所述阵列基板在所述平面上的正投影的面积的比值介于0.05至0.60之间。
  2. 根据权利要求1所述的阵列基板，还包括：
    第一衬底；
    位于所述第一衬底上的限定层，其限定所述至少一个凹陷部；以及
    遮挡层，其限定至少一个开口，
    其中，所述至少一个开口在所述第一衬底上的正投影与所述至少一个凹陷部在所述第一衬底上的正投影至少部分重叠，并且
    其中，所述遮挡层在所述第一衬底上的正投影与所述限定层在所述第一衬底上的正投影至少部分重叠。
  3. 根据权利要求2所述的阵列基板，其中，所述至少一个凹陷部贯穿所述限定层。
  4. 根据权利要求2或3所述的阵列基板，其中，所述遮挡层位于所述第一衬底与所述限定层之间。
  5. 根据权利要求2或3所述的阵列基板，其中，所述遮挡层位于所述第一衬底远离所述限定层的一侧。
  6. 根据权利要求2或3所述的阵列基板，
    其中，所述遮挡层包括第一部分，所述第一部分位于所述限定层远离所述第一衬底的一侧，并且附接到所述限定层的侧面和远离所述第一衬底的表面上；并且
    其中，所述第一部分限定所述至少一个开口。
  7. 根据权利要求6所述的阵列基板，
    其中，所述遮挡层还包括第二部分，所述第二部分附接到所述限定层的靠近所述第一衬底的表面上，以与所述第一部分共同包围所述限定层；并且
    其中，所述第二部分限定所述至少一个开口。
  8. 根据权利要求7所述的阵列基板，其中，所述遮挡层的第一部 分限定的所述至少一个开口在所述第一衬底上的正投影与所述遮挡层的第二部分限定的所述至少一个开口在所述第一衬底上的正投影完全重叠。
  9. 根据权利要求2-4和6-8中任一项所述的阵列基板，其中，所述限定层的靠近所述第一衬底的表面和/或所述限定层的远离所述第一衬底的表面构成所述遮挡层。
  10. 根据权利要求1-8中任一项所述的阵列基板，其中，位于所述至少一个凹陷部的侧壁上的任意一点的切线与所述阵列基板位于的所述平面呈一角度，且所述角度不等于90°。
  11. 根据权利要求2-8中任一项所述的阵列基板，
    其中，所述限定层限定多个凹陷部，所述遮挡层限定多个开口，所述多个凹陷部与所述多个开口一一对应，并且所述多个开口中的每一个在所述第一衬底上的正投影位于与该开口对应的一个凹陷部在所述第一衬底上的正投影之内。
  12. 根据权利要求2-8中任一项所述的阵列基板，其中，所述至少一个凹陷部中的每一个和所述至少一个开口中的每一个在所述第一衬底上的正投影的形状均包括圆形或正多边形。
  13. 根据权利要求12所述的阵列基板，
    其中，所述限定层限定多个凹陷部，所述遮挡层限定多个开口，所述多个凹陷部与所述多个开口一一对应，并且所述多个开口中的每一个在所述第一衬底上的正投影位于与该开口对应的一个凹陷部在所述第一衬底上的正投影之内；并且
    其中，所述每个开口和所述与该开口对应的一个凹陷部在所述第一衬底上的正投影的形状均为圆形，所述每个开口的直径在20～80μm的范围内，并且所述与该开口对应的一个凹陷部的直径在25～90μm的范围内；或者，所述每个开口在所述第一衬底上的正投影的形状为第一正多边形，所述与该开口对应的一个凹陷部在所述第一衬底上的正投影的形状为第二正多边形，所述第一正多边形的内切圆的直径在20～80μm的范围内，并且所述第二正多边形的内切圆的直径在25～90μm的范围内。
  14. 根据权利要求2-8中任一项所述的阵列基板，其中，所述限定层的材料包括光刻胶。
  15. 根据权利要求2-8中任一项所述的阵列基板，其中，所述遮挡层的材料包括不透光材料，所述不透光材料包括铬、氧化铬、黑色树脂。
  16. 根据权利要求2-8中任一项所述的阵列基板，其中，所述遮挡层在垂直于所述第一衬底的方向上的厚度在0.6～2.4μm的范围内。
  17. 根据权利要求2-8中任一项所述的阵列基板，还包括位于所述第一衬底与所述限定层之间的加热电极，所述加热电极被配置为对所述至少一个凹陷部加热。
  18. 根据权利要求17所述的阵列基板，其中，所述加热电极的材料包括氧化铟锡。
  19. 根据权利要求17所述的阵列基板，其中，所述加热电极包括彼此分离的多个子部分。
  20. 根据权利要求17所述的阵列基板，还包括导电层，
    其中，所述导电层位于所述第一衬底与所述加热电极之间并且与所述加热电极电连接；并且
    其中，所述导电层的至少一部分在所述第一衬底上的正投影落在所述加热电极在所述第一衬底上的正投影的外围，并且所述导电层至少部分地包围所述加热电极。
  21. 根据权利要求2-8中任一项所述的阵列基板，还包括亲水层和第一疏水层，
    其中，所述亲水层至少覆盖所述至少一个凹陷部的侧壁；并且，
    其中，所述第一疏水层位于所述限定层远离所述第一衬底的一侧并且相较于所述亲水层更远离所述第一衬底。
  22. 根据权利要求21所述的阵列基板，其中，所述亲水层还覆盖所述限定层远离所述第一衬底的表面以及所述至少一个凹陷部的底部。
  23. 根据权利要求20所述的阵列基板，
    其中，所述第一疏水层限定多个孔，所述限定层限定多个凹陷部，所述遮挡层限定多个开口，所述多个孔、所述多个凹陷部以及所述多个开口一一对应；
    其中，所述多个孔中的每一个在所述第一衬底上的第一正投影和与该孔对应的一个开口在所述第一衬底上的第三正投影均位于与该孔对应的一个凹陷部在所述第一衬底上的第二正投影之内，并且所述第 一正投影、所述第二正投影和所述第三正投影构成同心圆环；并且
    其中，所述第一正投影位于所述第二正投影和所述第三正投影之间，并且所述第三正投影位于所述第一正投影之内。
  24. 根据权利要求21所述的阵列基板，其中，所述第一疏水层的面积与所述亲水层的面积的比值介于0.01至2.00之间。
  25. 一种微流控装置，包括根据权利要求2-24中任一项所述的阵列基板、与所述阵列基板对盒的对置基板以及位于所述阵列基板和所述对置基板之间的间隔，
    其中，所述对置基板包括：
    第二衬底；以及
    位于所述第二衬底靠近所述第一衬底的一侧的第二疏水层，
    其中，所述对置基板包括至少一个贯穿所述第二衬底和所述第二疏水层的通孔。
  26. 根据权利要求25所述的微流控装置，其中，所述第一衬底和所述第二衬底的材料包括玻璃。
  27. 根据权利要求25所述的微流控装置，其中，所述第二疏水层包括吸光材料，并且所述吸光材料包括TiO 2和TiON中的至少一种。
  28. 一种微流控系统，包括控制装置和根据权利要求25-27中任一项所述的微流控装置，
    其中，所述控制装置与所述微流控装置电连接，并且配置为控制所述微流控装置的温度。
  29. 一种荧光检测方法，包括：
    将待检测试剂容纳在根据权利要求25-27中任一项所述的微流控装置的至少一个凹陷部中；
    使光源发射的第一波长的光通过所述遮挡层限定的至少一个开口照射到所述至少一个凹陷部；以及
    检测所述待检测试剂发射的第二波长的光。
PCT/CN2021/080444 2021-03-12 2021-03-12 阵列基板、微流控装置、微流控系统、荧光检测方法 WO2022188146A1 (zh)

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