WO2022179532A1 - Auxiliary winding measurement method and circuit - Google Patents

Auxiliary winding measurement method and circuit Download PDF

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Publication number
WO2022179532A1
WO2022179532A1 PCT/CN2022/077503 CN2022077503W WO2022179532A1 WO 2022179532 A1 WO2022179532 A1 WO 2022179532A1 CN 2022077503 W CN2022077503 W CN 2022077503W WO 2022179532 A1 WO2022179532 A1 WO 2022179532A1
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Prior art keywords
voltage
main control
pin
detection
control chip
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PCT/CN2022/077503
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French (fr)
Chinese (zh)
Inventor
於昌虎
曾正球
赵志伟
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深圳南云微电子有限公司
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Publication of WO2022179532A1 publication Critical patent/WO2022179532A1/en

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    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00Conversion of dc power input into dc power output
    • H02M3/22Conversion of dc power input into dc power output with intermediate conversion into ac
    • H02M3/24Conversion of dc power input into dc power output with intermediate conversion into ac by static converters
    • H02M3/28Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
    • H02M3/325Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal
    • H02M3/335Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M3/33507Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of the output voltage or current, e.g. flyback converters
    • H02M3/33523Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of the output voltage or current, e.g. flyback converters with galvanic isolation between input and output of both the power stage and the feedback loop
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G01R19/165Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values
    • G01R19/16533Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values characterised by the application
    • G01R19/16538Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values characterised by the application in AC or DC supplies
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02BCLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

Definitions

  • the invention belongs to the field of soft-switching flyback converters, in particular to auxiliary winding voltage detection.
  • Active clamp flyback converter is a power converter topology that can realize soft switching of power tubes.
  • Zero-voltage turn-on (ZVS, Zero-Voltage-Switch) of the switch In this way, the turn-on loss of the main switch tube can be eliminated, the overall efficiency of the converter can be improved, and the development of high frequency and high power density of the converter is facilitated.
  • FIG. 1 it is the circuit diagram of a typical active clamp flyback converter.
  • 101 is the clamping capacitor
  • 102 (LK) is the leakage inductance
  • 103 is the power transformer
  • 104 (LM) is the excitation inductance
  • 105 (MA) is the clamping tube
  • 106 is the main control chip
  • 107 is the half-bridge driver Chip
  • 108 (MP) is the main switch tube
  • 109 is the excitation inductor current sampling resistor
  • 110 is the power supply auxiliary winding of the main control chip
  • 111 is the rectifier diode that supplies power to the main control chip
  • 112 is the power supply capacitor of the main control chip
  • 113 is The rectifier diode for the power supply of the half-bridge driver chip
  • 114 is the power supply capacitor of the half-bridge driver chip
  • 115 (R1) is the upper voltage dividing resistor of the auxiliary winding detection circuit
  • 116 (R2) is the lower voltage dividing resistor of the detection circuit
  • VDD
  • FIG. 2 it is a schematic diagram of the key signal waveform of a typical non-complementary mode active clamp flyback converter.
  • GL is the gate driving voltage waveform of the main switch
  • GH is the gate driving voltage waveform of the clamping tube
  • VDS is the drain voltage waveform of the main switch
  • I LM is the excitation inductor current waveform
  • I LK is the leakage inductance current. waveform.
  • the clamp tube MA is briefly turned on at the end of the resonant phase of degaussing, and the drive signal GH becomes high (time T1 in Figure 2).
  • the excitation inductor LM realizes negative excitation, that is, the inductor current I LM is a negative current, and the slope of the current is the difference between the voltage saved on the clamping capacitor 101 minus the input voltage divided by the excitation inductance
  • the inductance of LM the clamp tube MA is turned on for a period of time until it is turned off at T2 in Figure 2.
  • the current of the excitation inductance LM cannot be abruptly changed, the negative current will discharge the charge on the drain of the main switch tube MP. , that is, the voltage VDS becomes close to 0V, the current of the excitation inductance LM gradually increases, and the slope is the input voltage divided by the inductance of the excitation inductance LM; time, turn on the main switch tube of the next cycle (time T3 in Figure 2), at this time, the main switch tube MP realizes zero-voltage turn-on, eliminating the turn-on loss; after a period of time, the excitation inductor LM is excited in the forward direction When the current reaches the current limiting point of the entire converter control loop (time T4 in Figure 2), the main switch tube MP is turned off to realize PWM control.
  • a high-voltage side half-bridge driver chip is also required to raise the driving level of the clamping tube MA to the voltage of VDS to realize the effective driving of the clamping tube MA, and the clamping tube MA can be effectively driven.
  • the maximum working voltage of the drain-source of MA is the input voltage plus the reflected voltage of the secondary side of the converter. Therefore, the clamp tube MA needs to use a transistor with high withstand voltage, which is costly.
  • a auxiliary winding clamping technique is proposed, as shown in Fig. 3, which is the topology of the auxiliary winding clamping flyback converter.
  • a traditional RCD clamp that is, the clamp capacitor 301, the bleeder resistor 302, and the clamp diode 303 in Figure 3
  • the clamp tube MA is connected in series to the main control In the auxiliary winding of the chip power supply.
  • the clamping tube MA is connected to the low-voltage side of the auxiliary winding in series, so that the source of the clamping tube MA is the reference ground, which greatly simplifies the design of the driving circuit; and the maximum working voltage of the clamping tube MA becomes
  • the input voltage is divided by the turns ratio (NP/NA) of the primary and auxiliary windings of the transformer, so that low-cost, low-voltage transistors can be used.
  • the working sequence of the clamp tube MA and the main switch tube MP can still refer to Fig. 2. After the degaussing of the excitation inductance, the clamp tube MA is turned on briefly, so that the power supply capacitor 308 of the auxiliary winding is briefly discharged.
  • the excitation inductance LM realizes the negative to excitation. Similar to the active clamp, as long as the negative current of the excitation inductor LM is sufficient, the zero-voltage turn-on of the main switch tube MP in the next cycle can be realized.
  • the auxiliary winding clamping method in Figure 3 will not affect the normal power supply of the main control chip, but it will bring difficulties to the detection of important parameters: in Figure 1, the rectifier diode 111 of the auxiliary winding power supply circuit is on the high voltage side of the auxiliary winding. The voltage dividing resistors 115 and 116 of the detection circuit take the ground as the reference potential.
  • the anode voltage of the rectifier diode is Simply clamp the 115/116 divider point, the FA pin, to 0V to convert the input voltage to a current proportional to VIN
  • the FA pin voltage is When detecting the resonance period in the VDS resonance stage, it is only necessary to detect the time when the voltage of the FA pin crosses zero; in Figure 3, the clamping tube MA is connected in series to the low-voltage side of the auxiliary winding to block the DC path to the ground, so, The detection of the above-mentioned three important parameters cannot take the ground as the reference potential. How to accurately detect the three important parameters has become an important problem in the use of the auxiliary winding clamp topology.
  • the purpose of the present invention is to provide an accurate and novel detection method of input voltage, output voltage and resonance period and
  • the circuit, the detection method and the circuit are based on the existing circuit components, and can realize the detection of the above-mentioned parameters without additional cost, making the auxiliary winding clamping topology more practical.
  • the detection based on the input voltage can realize the functions of input undervoltage protection, input feedforward, ZVS detection, etc.; based on the output voltage detection, it can realize the functions of output overvoltage protection and primary side feedback; based on the detection of the resonance period, it can realize the functions of quasi-resonant control and so on.
  • the detection method provided by the invention is realized by the following scheme:
  • An auxiliary winding detection method which is used for the auxiliary winding to clamp a flyback converter, and the auxiliary winding in the auxiliary winding clamped flyback converter is controlled by a main control chip.
  • the resistor 403 and the lower voltage dividing resistor 404 are connected in series to form a two-terminal network. It is connected to the pin VDD of the main control chip, and the other end of the lower voltage dividing resistor 404 is connected to the end of the same name of the auxiliary winding 311;
  • the method controls the main control chip to detect the pin FA and its pin VDD voltage, so that the value ratio of the measured parameter falls on the detection end of the corresponding detection circuit;
  • the method specifically includes an input voltage detection step, the detection circuit involved in this step is an input voltage detection circuit, the circuit is connected between the detection pin FA and the pin VDD of the main control chip, and in the transformer excitation stage, it clamps the main control chip.
  • the control chip detects the voltage of the pin FA to the voltage value of its pin VDD, so that the input voltage is proportional to the detection end of the input voltage detection circuit.
  • the method further includes an output voltage detection step, the detection circuit involved in this step is an output voltage detection circuit, and the circuit is also connected to the detection pin FA and the pin of the main control chip.
  • the voltage difference between the main control chip detection pin FA voltage and its pin VDD voltage falls on a resistor, the voltage difference is the proportional value of the output voltage, and then transmitted to the output voltage detection circuit detection terminal.
  • the method further includes a resonant cycle detection step, the detection circuit involved in this step is a resonant cycle detection circuit, and the circuit is also connected between the detection pin FA and the pin VDD of the main control chip.
  • the control chip detects the voltage of the main control chip's detection pin FA and its pin VDD, compares the magnitudes of the two, and obtains the resonant period of the drain voltage of the main switch tube of the auxiliary winding clamped flyback converter.
  • the invention also provides an auxiliary winding detection circuit, which is used for the auxiliary winding clamped flyback converter, and the auxiliary winding clamped flyback converter realizes operation through the main control chip, including an upper voltage dividing resistor, a lower voltage dividing resistor and an input voltage
  • an upper voltage dividing resistor is connected to the other end of the auxiliary winding
  • the other end of the upper voltage divider resistor is connected to one end of the lower voltage divider resistor
  • the other end of the lower voltage divider resistor is connected to the same name terminal of the auxiliary winding
  • one end of the upper voltage divider resistor is connected to the input voltage detection circuit
  • One end is connected to the main control chip pin VDD
  • the other end of the upper voltage divider resistor and the other end of the input voltage detection circuit are connected to the main control chip detection pin FA
  • the input voltage detection circuit is used to control the main control chip detection pin FA and its pin VDD voltage, so that the value ratio of the input voltage of the measured parameter falls on the detection end of
  • the input voltage detection circuit includes a power input amplifier 407, a PMOS transistor 408, a PMOS transistor 410, an NMOS transistor 409, an NMOS transistor 411 and an NMOS transistor 412, and the negative input terminal of the power input amplifier 407 and the PMOS transistor.
  • the source of 410 is connected to the detection pin FA of the main control chip, the positive input terminal of the power input amplifier 407 and the source of the PMOS transistor 408 are connected to the main control chip pin VDD, and the output terminal of the power input amplifier 407 is connected to the gate of the PMOS transistor 410 and the gate of the PMOS transistor 408, the drain of the PMOS transistor 408 is connected to its gate and the drain of the NMOS transistor 409, the gate of the NMOS transistor 409 is connected to the drain of the NMOS transistor 411 and the drain of the PMOS transistor 410, the NMOS transistor The gate of 411 is shorted to its drain and connected to the gate of NMOS transistor 412.
  • the sources of NMOS transistor 409, NMOS transistor 411 and NMOS transistor 412 are all grounded, and the drain of NMOS transistor 412 is the detection terminal of the input voltage detection circuit.
  • the auxiliary winding detection circuit further includes an output voltage detection circuit; the output voltage detection circuit is used to control the main control chip to detect the voltage of the pin FA and its pin VDD, so that the value ratio of the output voltage of the measured parameter falls within
  • the detection terminal of the output voltage detection circuit is specifically used to control the voltage difference between the detection pin FA voltage of the main control chip and its pin VDD voltage to fall on a resistor in the transformer degaussing stage, and the voltage difference is the ratio of the output voltage The value is then transmitted to the detection terminal of the output voltage detection circuit.
  • the output voltage detection circuit includes a power input amplifier 413, a resistor 414, a PMOS transistor 415, a resistor 416, a sampling switch 417 and a holding capacitor 418.
  • the positive input terminal of the power input amplifier 413 is connected to the detection lead of the main control chip.
  • Pin FA its negative input terminal is connected to one end of the resistor 414 and the source of the PMOS tube 415, its output terminal is connected to the gate of the PMOS tube 415, the other end of the resistor 414 is connected to the main control chip pin VDD, and the drain of the PMOS tube 415
  • the pole is connected to one end of the resistor 416 and one end of the sampling switch 417, the other end of the sampling switch 417 is connected to the upper plate of the holding capacitor 418, the other end of the resistor 416 and the lower plate of the holding capacitor 418 are grounded, and the upper plate of the holding capacitor 418 It is the detection terminal of the output voltage detection circuit.
  • the detection circuit further includes a resonance period detection circuit, one end of the resonance period detection circuit is connected to the detection pin FA of the main control chip, and the other end of the resonance period detection circuit is connected to the main control chip pin VDD for detecting the detection lead of the main control chip.
  • Pin FA and its pin VDD voltage compare the magnitude of the two, and output the resonant cycle signal of the drain voltage of the main switch tube of the main switch tube of the auxiliary winding clamped flyback converter.
  • the resonance period detection circuit includes an NPN transistor 419 , an NPN transistor 420 , a current limiting resistor 421 , a current limiting resistor 422 , an NMOS transistor 423 , an NMOS transistor 424 , an NMOS transistor 425 , an NMOS transistor 426 and a current comparator 427 , the collector of the NPN transistor 419 is connected to its own base, the collector of the NPN transistor 420 and the main control chip pin VDD, the emitter of the NPN transistor 419 is connected to one end of the current limiting resistor 421, and the other end of the current limiting resistor 421 is connected to the NMOS The gate of the transistor 423, the drain of the NMOS transistor 423 and the gate of the NMOS transistor 424, the drain of the NMOS transistor 424 is connected to the positive input terminal of the current comparator 427, and the base of the NPN transistor 420 is connected to the detection pin of the main control chip FA, the emitter of the
  • the pole is connected to the negative input terminal of the current comparator 427, the sources of the NMOS transistor 423, NMOS transistor 424, NMOS transistor 425 and NMOS transistor 426 are all grounded, and the output terminal of the current comparator 427 outputs the resonant period signal ZCD.
  • Figure 1 is a circuit diagram of a typical active clamp flyback converter
  • Figure 2 is a key signal waveform diagram of a typical non-complementary active clamp flyback converter
  • Fig. 3 is the circuit diagram of the auxiliary winding clamp flyback converter
  • FIG. 4 is a circuit diagram of an auxiliary winding voltage detection according to an embodiment of the present invention.
  • Fig. 5 is the key signal waveform diagram of the detection circuit of the present invention.
  • FIG. 6 is a key signal waveform diagram of the auxiliary winding clamped converter applying the detection circuit of the present invention.
  • FIG. 4 it is an embodiment of the auxiliary winding detection circuit of the present invention, including an upper voltage dividing resistor 403, a lower voltage dividing resistor 404, a power input amplifier 407, a PMOS transistor 408, a PMOS transistor 410, an NMOS transistor 409, NMOS transistor 411, NMOS transistor 412, power input amplifier 413, resistor 414, PMOS transistor 415, resistor 416, sampling switch 417, holding capacitor 418, transistor 419, transistor 420, resistor 421, resistor 422, NMOS transistor 423, NMOS transistor 424 , NMOS transistor 425 , NMOS transistor 426 and current comparator 427 .
  • the upper voltage dividing resistor 403 and the lower voltage dividing resistor 404 are connected in series across the two ends of the auxiliary winding to detect the voltage difference between the two ends of the auxiliary winding.
  • the common ends of the upper and lower voltage dividing resistors are connected to the detection pin FA of the main control chip, and the high voltage side of the auxiliary winding supplies power to the pin VDD of the main control chip through the decoupling capacitor 406 .
  • the power input amplifier 407 , the PMOS transistor 408 , the PMOS transistor 410 , the NMOS transistor 409 , the NMOS transistor 411 and the NMOS transistor 412 form an input voltage detection circuit.
  • the negative input terminal of the power input amplifier 407 is connected to the detection pin FA of the main control chip and the source of the PMOS transistor 410 , the positive input terminal is connected to the main control chip pin VDD, and the output terminal of the power input amplifier 407 is connected to the gate of the PMOS transistor 410 and the gate of the PMOS tube 408;
  • the drain of the PMOS tube 408 is connected to its own gate and the drain of the NMOS tube 409, the source of the PMOS tube 408 is connected to the main control chip pin VDD;
  • the gate of the NMOS tube 409 is connected to the NMOS tube
  • the drain of the transistor 411, the gate of the NMOS transistor 411 is shorted to its drain, and connected to the gate of the NMOS transistor 412; the drain
  • the transformer excitation stage that is, the TC stage in FIG. 5
  • the voltage across the primary winding NP of the transformer 401 is VIN
  • the voltage coupled to both ends of the auxiliary winding is
  • the terminal VA of the same name of the auxiliary winding, that is, the drain voltage of the clamping tube 402 is:
  • the voltage of the detection pin FA of the main control chip should be:
  • the power input amplifier 407 and the PMOS transistor 410 form a negative feedback
  • the gate of the PMOS transistor 410 is pulled down, thereby increasing the saturation of the PMOS transistor 410
  • the current causes the voltage of the detection pin FA of the main control chip to drop. Therefore, the voltage of the main control chip detection pin FA is clamped to the main control chip pin VDD voltage, no current flows through the resistor R1, and the current flowing into the main control chip detection pin FA is:
  • the input terminals of the power input amplifier 407 are all high impedance, which can be regarded as no current flowing, and the current flowing into the detection pin FA of the main control chip flows into the drain of the NMOS transistor 411 through the PMOS transistor 410 .
  • the NMOS transistor 411 and the NMOS transistor 412 form a current mirror. Assuming that the current mirror ratio is 1:m, the detected current proportional to the input voltage VIN is:
  • the current of the PMOS transistor 410 becomes larger, so that the current of the NMOS transistor 411 becomes larger, and the NMOS transistor 409 and the PMOS transistor 411 form a current mirror, so that the current of the NMOS transistor 409 becomes larger;
  • the voltage difference increases, causing the gate voltage of the PMOS transistor 410 to be pulled down rapidly, which speeds up the response speed of the PMOS transistor 410 .
  • the voltage waveform (dotted line) of the detection pin FA of the main control chip is actually clamped to VDD.
  • the output voltage sampling circuit includes a power input amplifier 413 , a resistor 414 , a PMOS transistor 415 , a resistor 416 , a sampling switch 417 and a holding capacitor 418 .
  • the positive input terminal of the power input amplifier 413 is connected to the detection pin FA of the main control chip
  • the negative input terminal of the power input amplifier 413 is connected to one end of the resistor 414 and the source of the PMOS transistor 415
  • the other end is connected to the main control chip pin VDD
  • the drain of the PMOS transistor 415 is connected to one end of the resistor 416 and one end of the sampling switch 417
  • the other end of the resistor 416 is grounded
  • the other end of the sampling switch 417 is connected to the upper plate of the holding capacitor 418
  • the lower plate of the holding capacitor 418 is grounded, and the voltage of the upper plate of the holding capacitor 418 is the detected output voltage proportional value.
  • the voltage difference across resistor 414 is:
  • resistor 414 also flows through resistor 416, so the voltage drop across resistor 416 is:
  • the resistance value R 414 of the resistor 414 and the resistance value R 416 of the resistor 416 can be set equal, and the voltage drop on the resistor 416 can be completely set by the upper voltage dividing resistor R1 and the lower voltage dividing resistor R2 on the periphery of the chip.
  • the sampling switch 417 is turned on during the transformer degaussing stage, and the voltage on the resistor 416 is sampled and stored in the holding capacitor 418 to obtain the DC output voltage proportional value VO_SAMP.
  • the resonance period detection circuit includes NPN transistor 419 , NPN transistor 420 , current limiting resistor 421 , current limiting resistor 422 , NMOS transistor 423 , NMOS transistor 424 , NMOS transistor 425 , NMOS transistor 426 and current comparator 427 .
  • the collector of the NPN transistor 419 is connected to its own base, the collector of the NPN transistor 420 and the main control chip pin VDD, the emitter of the NPN transistor 419 is connected to one end of the current limiting resistor 421; the other end of the current limiting resistor 421 is connected to the NMOS transistor
  • the gate of 423, the drain of NMOS tube 423 and the gate of NMOS tube 424, the sources of NMOS tube 423 and NMOS tube 424 are all grounded; the drain of NMOS tube 424 is connected to the positive input terminal of current comparator 427;
  • NPN The base of the transistor 420 is connected to the detection pin FA of the main control chip, the emitter of the NPN transistor 420 is connected to one end of the current limiting resistor 422; the other end of the current limiting resistor 422 is connected to the gate of the NMOS transistor 425, the drain of the NMOS transistor 425 and the The gate of the NMOS transistor 426, the sources of the NM
  • the base of the NPN transistor 420 is connected to the voltage of the detection pin FA of the main control chip.
  • Figure 5 shows the TR resonance stage.
  • the voltage waveform of the detection pin FA of the main control chip is a sine wave with VDD as the center value. Its resonance period is the same as that of VA, that is, the same as that of VDS. In this way, the resonance period can be detected only by comparing the voltage of the main control chip detection pin FA and the main control chip pin VDD.
  • the voltage drop across the resistor 421 is:
  • V BE419 is the emitter junction voltage drop of the NPN transistor 419
  • V GS423 is the gate-source voltage drop of the NMOS transistor 423 .
  • the current flowing from the positive input terminal of the current comparator 427 is:
  • the size of the NPN transistor 420 is the same as that of the NPN transistor 419
  • the resistance value of the current limiting resistor 422 is the same as the resistance value (R421) of the current limiting resistor 421
  • the size of the NMOS transistor 425 is the same as that of the NMOS transistor 423, the NMOS transistor 425 and the NMOS transistor 426
  • the ratio of the formed current mirror is 1:1, then when the voltage of the detection pin FA of the main control chip is greater than the voltage of the pin VDD of the main control chip, the current flowing from the negative input terminal of the current comparator 427 is greater than the current flowing out from the positive input terminal of the current comparator 427.
  • the current comparator 427 outputs a low level. Similarly, when the voltage of the detection pin FA of the main control chip is lower than the voltage of the pin VDD of the main control chip, the current comparator 427 outputs a high level.
  • Figure 6 shows a schematic diagram of the key signal waveforms of the entire auxiliary winding clamp converter.
  • the main switch tube drive signal GL is at a high level
  • the voltage of the main control chip detection pin FA is clamped to the main control chip pin VDD voltage, and the internal detection of the chip is consistent with the input voltage VIN.
  • the circuit in Fig. 4, except 401, 402, 405, and 406, can be set in the main control chip and form a part of the main control chip.
  • the embodiments of the present invention are not limited to this. According to the above content, according to the common technical knowledge and conventional means in the field, and without departing from the above-mentioned basic technical idea of the present invention, the auxiliary winding voltage detection circuit of the present invention has other Therefore, the present invention can also make other modifications, substitutions or changes in various forms, which all fall within the protection scope of the present invention.

Abstract

The present invention provides an auxiliary winding measurement method and circuit. The measurement method and circuit are based on existing circuit elements, do not need extra cost, and enable auxiliary winding clamping topology to be more practical. The method specifically comprises: clamping a measurement pin to a power supply voltage in an excitation stage, so that the current flowing into the measurement pin is proportional to an input voltage, and the accurate measurement of the input voltage is achieved; making a voltage difference between the power supply voltage and the voltage of the measurement pin fall onto one internal resistor at a demagnetization stage, then transferring the current flowing through the resistor to another internal resistor, and using a sampling and holding circuit to sample and store the voltage of the other internal resistor, thereby achieving the accurate measurement of an output voltage; and comparing the voltage of the measurement pin with the voltage of a power supply pin, thereby achieving the measurement of a voltage resonance period of a drain electrode of a main switch tube. Input under-voltage protection, input feedforward, ZVS detection, and the like can be achieved according to the input voltage; output overvoltage protection and primary-side feedback can be achieved according to the output voltage; and quasi-resonance control and the like can be achieved according to the resonance period measurement.

Description

一种辅助绕组检测方法及电路A kind of auxiliary winding detection method and circuit 技术领域technical field
本发明属于软开关反激变换器领域,特别涉及辅助绕组电压检测。The invention belongs to the field of soft-switching flyback converters, in particular to auxiliary winding voltage detection.
背景技术Background technique
有源钳位反激变换器是一种能够实现功率管软开关的电力变换器拓扑。合理设计变压器励磁电感的感量,使得钳位管导通过程持续到出现足够的负向励磁电流再关断,由于电感电流不能突变,负向励磁电流将开关节点电荷泄放掉,从而实现主开关管的零电压开通(ZVS,Zero-Voltage-Switch)。这样,主开关管的开通损耗得以消除,变换器的整体效率得以提高,便于变换器的高频化、高功率密度的发展。Active clamp flyback converter is a power converter topology that can realize soft switching of power tubes. Reasonably design the inductance of the transformer excitation inductance, so that the conduction process of the clamp tube continues until there is enough negative excitation current, and then turns off. Zero-voltage turn-on (ZVS, Zero-Voltage-Switch) of the switch. In this way, the turn-on loss of the main switch tube can be eliminated, the overall efficiency of the converter can be improved, and the development of high frequency and high power density of the converter is facilitated.
如图1所示,为典型有源钳位反激变换器的电路图。图中,101为钳位电容、102(LK)为漏感、103为功率变压器、104(LM)为励磁电感、105(MA)为钳位管、106为主控芯片、107为半桥驱动芯片、108(MP)为主开关管、109为励磁电感电流采样电阻、110为主控芯片的供电辅助绕组、111为主控芯片供电的整流二极管、112为主控芯片的供电电容、113为半桥驱动芯片供电的整流二极管、114为半桥驱动芯片的供电电容、115(R1)为辅助绕组检测电路的上分压电阻、116(R2)为检测电路的下分压电阻、VDD为主控芯片的供电引脚、FA为主控芯片的检测引脚、117为副边整流二极管、118为输出滤波电容。如图2所示,为典型的非互补模式有源钳位反激变换器的关键信号波形示意图。其中,GL为主开关管的栅极驱动电压波形、GH为钳位管的栅极驱动电压波形、VDS为主开关管漏极电压波形、I LM为励磁电感电流波形、I LK为漏感电流波形。 As shown in Figure 1, it is the circuit diagram of a typical active clamp flyback converter. In the figure, 101 is the clamping capacitor, 102 (LK) is the leakage inductance, 103 is the power transformer, 104 (LM) is the excitation inductance, 105 (MA) is the clamping tube, 106 is the main control chip, and 107 is the half-bridge driver Chip, 108 (MP) is the main switch tube, 109 is the excitation inductor current sampling resistor, 110 is the power supply auxiliary winding of the main control chip, 111 is the rectifier diode that supplies power to the main control chip, 112 is the power supply capacitor of the main control chip, 113 is The rectifier diode for the power supply of the half-bridge driver chip, 114 is the power supply capacitor of the half-bridge driver chip, 115 (R1) is the upper voltage dividing resistor of the auxiliary winding detection circuit, 116 (R2) is the lower voltage dividing resistor of the detection circuit, and VDD is the main The power supply pin of the control chip, FA is the detection pin of the main control chip, 117 is the secondary side rectifier diode, and 118 is the output filter capacitor. As shown in Figure 2, it is a schematic diagram of the key signal waveform of a typical non-complementary mode active clamp flyback converter. Among them, GL is the gate driving voltage waveform of the main switch, GH is the gate driving voltage waveform of the clamping tube, VDS is the drain voltage waveform of the main switch, I LM is the excitation inductor current waveform, and I LK is the leakage inductance current. waveform.
结合图1及图2,理解非互补有源钳位反激变换器的工作原理,在消磁结束的谐振阶段短暂开通钳位管MA,驱动信号GH变为高电平(图2中的T1时刻),基于图1的电路拓扑,励磁电感LM实现负向励磁,即电感电流I LM为负向电流,电流的斜率为钳位电容101上保存的电压减去输入电压的差值除以励磁电感LM的感量;钳位管MA导通一段时间至图2中的T2时刻将其关断,由于励磁电感LM的电流不能突变,负向的电流将主开关管MP漏极的电荷泄放掉,即电压VDS变为接近0V,励磁电感LM电流逐渐增大,斜率为输入电压除以励磁电感 LM感量;在励磁电感LM电流变正之前,即钳位管MA关断后隔一段死区时间,将下个周期的主开关管开通(图2中的T3时刻),此时,主开关管MP即实现了零电压开通,消除了开通损耗;经过一段时间,在励磁电感LM正向励磁电流达到整个变换器控制环路的限流点(图2中的T4时刻),将主开关管MP关断,实现PWM控制。根据前述功能,除了需要主控制芯片外,还需要一个高压侧的半桥驱动芯片将钳位管MA驱动电平上举至VDS的电压才能实现钳位管MA的有效驱动,并且,钳位管MA的漏源极最大工作电压为输入电压加上变换器副边的反射电压,因此,钳位管MA需要使用高耐压的晶体管,代价较大。 With reference to Figure 1 and Figure 2, to understand the working principle of the non-complementary active clamp flyback converter, the clamp tube MA is briefly turned on at the end of the resonant phase of degaussing, and the drive signal GH becomes high (time T1 in Figure 2). ), based on the circuit topology of Figure 1, the excitation inductor LM realizes negative excitation, that is, the inductor current I LM is a negative current, and the slope of the current is the difference between the voltage saved on the clamping capacitor 101 minus the input voltage divided by the excitation inductance The inductance of LM; the clamp tube MA is turned on for a period of time until it is turned off at T2 in Figure 2. Since the current of the excitation inductance LM cannot be abruptly changed, the negative current will discharge the charge on the drain of the main switch tube MP. , that is, the voltage VDS becomes close to 0V, the current of the excitation inductance LM gradually increases, and the slope is the input voltage divided by the inductance of the excitation inductance LM; time, turn on the main switch tube of the next cycle (time T3 in Figure 2), at this time, the main switch tube MP realizes zero-voltage turn-on, eliminating the turn-on loss; after a period of time, the excitation inductor LM is excited in the forward direction When the current reaches the current limiting point of the entire converter control loop (time T4 in Figure 2), the main switch tube MP is turned off to realize PWM control. According to the aforementioned functions, in addition to the main control chip, a high-voltage side half-bridge driver chip is also required to raise the driving level of the clamping tube MA to the voltage of VDS to realize the effective driving of the clamping tube MA, and the clamping tube MA can be effectively driven. The maximum working voltage of the drain-source of MA is the input voltage plus the reflected voltage of the secondary side of the converter. Therefore, the clamp tube MA needs to use a transistor with high withstand voltage, which is costly.
鉴于有源钳位的成本问题,一种辅助绕组钳位技术被提出来,如图3所示,为辅助绕组钳位反激变换器的拓扑结构。将图1中的有源钳位支路替换为传统的RCD钳位,即图3中的钳位电容301、泄放电阻302、钳位二极管303,将钳位管MA串接到给主控芯片供电的辅助绕组中。具体而言,将钳位管MA串接到辅助绕组的低压侧,这样,钳位管MA的源极为参考地,大大简化了驱动电路的设计;并且,钳位管MA的最大工作电压变为输入电压除以变压器原边绕组和辅助绕组的匝数比(NP/NA),这样,就可以使用低成本的低耐压晶体管。钳位管MA及主开关管MP的工作时序仍然可以参考图2,在励磁电感消磁结束之后短暂开通钳位管MA,使得辅助绕组的供电电容308短暂放电,根据同名端,励磁电感LM实现负向励磁。类似于有源钳位,只要励磁电感LM的负向电流足够,就可以实现下个周期的主开关管MP零电压开通。In view of the cost of active clamping, an auxiliary winding clamping technique is proposed, as shown in Fig. 3, which is the topology of the auxiliary winding clamping flyback converter. Replace the active clamp branch in Figure 1 with a traditional RCD clamp, that is, the clamp capacitor 301, the bleeder resistor 302, and the clamp diode 303 in Figure 3, and the clamp tube MA is connected in series to the main control In the auxiliary winding of the chip power supply. Specifically, the clamping tube MA is connected to the low-voltage side of the auxiliary winding in series, so that the source of the clamping tube MA is the reference ground, which greatly simplifies the design of the driving circuit; and the maximum working voltage of the clamping tube MA becomes The input voltage is divided by the turns ratio (NP/NA) of the primary and auxiliary windings of the transformer, so that low-cost, low-voltage transistors can be used. The working sequence of the clamp tube MA and the main switch tube MP can still refer to Fig. 2. After the degaussing of the excitation inductance, the clamp tube MA is turned on briefly, so that the power supply capacitor 308 of the auxiliary winding is briefly discharged. According to the terminal of the same name, the excitation inductance LM realizes the negative to excitation. Similar to the active clamp, as long as the negative current of the excitation inductor LM is sufficient, the zero-voltage turn-on of the main switch tube MP in the next cycle can be realized.
图3的辅助绕组钳位方式不会影响主控芯片的正常供电,但是,却会给重要参量的检测带来困难:图1中,辅助绕组供电回路的整流二极管111在辅助绕组的高压侧,检测电路的分压电阻115及116以地为参考电位,励磁阶段检测输入电压VIN时,整流二极管的阳极电压为
Figure PCTCN2022077503-appb-000001
只需将115/116的分压点,即FA引脚钳位到0V,即可将输入电压转化为与VIN成比例的电流
Figure PCTCN2022077503-appb-000002
消磁阶段检测输出电压时,FA引脚电压为
Figure PCTCN2022077503-appb-000003
VDS谐振阶段检测谐振周期时,只需检测FA引脚电压过零的时刻即可;而图3中将钳位管MA串接到辅助绕组的低压侧阻断了到地的直流通路,所以,上述三个重要参量的检测不能以地为参考电位,如何准确地检测三个重要参量成为辅助绕组钳位拓扑使用过程中的重要问题点。
The auxiliary winding clamping method in Figure 3 will not affect the normal power supply of the main control chip, but it will bring difficulties to the detection of important parameters: in Figure 1, the rectifier diode 111 of the auxiliary winding power supply circuit is on the high voltage side of the auxiliary winding. The voltage dividing resistors 115 and 116 of the detection circuit take the ground as the reference potential. When the input voltage VIN is detected in the excitation phase, the anode voltage of the rectifier diode is
Figure PCTCN2022077503-appb-000001
Simply clamp the 115/116 divider point, the FA pin, to 0V to convert the input voltage to a current proportional to VIN
Figure PCTCN2022077503-appb-000002
When the output voltage is detected in the degaussing stage, the FA pin voltage is
Figure PCTCN2022077503-appb-000003
When detecting the resonance period in the VDS resonance stage, it is only necessary to detect the time when the voltage of the FA pin crosses zero; in Figure 3, the clamping tube MA is connected in series to the low-voltage side of the auxiliary winding to block the DC path to the ground, so, The detection of the above-mentioned three important parameters cannot take the ground as the reference potential. How to accurately detect the three important parameters has become an important problem in the use of the auxiliary winding clamp topology.
发明内容SUMMARY OF THE INVENTION
鉴于辅助绕组钳位拓扑中尚没有简单实用的输入电压、输出电压及谐振周期的检测电路,本发明的目的在于,提供一种准确的、新型的输入电压和输出电压及谐振周期的检测方法及电路,此检测方法及电路基于现有电路元件,不需额外的代价即可实现上述参量的检测,使得辅助绕组钳位拓扑更加实用。基于输入电压的检测可以实现输入欠压保护、输入前馈、ZVS检测等功能;基于输出电压检测可以实现输出过压保护、原边反馈等功能;基于谐振周期检测可以实现准谐振控制等功能。In view of the fact that there is no simple and practical detection circuit for input voltage, output voltage and resonance period in the auxiliary winding clamping topology, the purpose of the present invention is to provide an accurate and novel detection method of input voltage, output voltage and resonance period and The circuit, the detection method and the circuit are based on the existing circuit components, and can realize the detection of the above-mentioned parameters without additional cost, making the auxiliary winding clamping topology more practical. The detection based on the input voltage can realize the functions of input undervoltage protection, input feedforward, ZVS detection, etc.; based on the output voltage detection, it can realize the functions of output overvoltage protection and primary side feedback; based on the detection of the resonance period, it can realize the functions of quasi-resonant control and so on.
本发明提供的检测方法通过以下方案实现:The detection method provided by the invention is realized by the following scheme:
一种辅助绕组检测方法,用于辅助绕组钳位反激变换器,辅助绕组钳位反激变换器中的辅助绕组通过主控芯片控制,其特征在于:在辅助绕组两端跨接上分压电阻403和下分压电阻404串联后组成的两端子网络,将上分压电阻403和下分压电阻404的公共端与主控芯片的检测引脚FA相连,上分压电阻403的另一端与主控芯片引脚VDD相连,下分压电阻404的另一端与辅助绕组311的同名端相连;An auxiliary winding detection method, which is used for the auxiliary winding to clamp a flyback converter, and the auxiliary winding in the auxiliary winding clamped flyback converter is controlled by a main control chip. The resistor 403 and the lower voltage dividing resistor 404 are connected in series to form a two-terminal network. It is connected to the pin VDD of the main control chip, and the other end of the lower voltage dividing resistor 404 is connected to the end of the same name of the auxiliary winding 311;
所述方法通过控制主控芯片检测引脚FA和其引脚VDD电压,使被测参数的值比例落在对应检测电路的检测端;The method controls the main control chip to detect the pin FA and its pin VDD voltage, so that the value ratio of the measured parameter falls on the detection end of the corresponding detection circuit;
所述方法具体包括输入电压检测步骤,该步骤涉及的检测电路为输入电压检测电路,该电路连在主控芯片的检测引脚FA和引脚VDD之间,在变压器励磁阶段,其钳位主控芯片检测引脚FA电压到其引脚VDD电压值,使得输入电压成比例落在输入电压检测电路检测端。The method specifically includes an input voltage detection step, the detection circuit involved in this step is an input voltage detection circuit, the circuit is connected between the detection pin FA and the pin VDD of the main control chip, and in the transformer excitation stage, it clamps the main control chip. The control chip detects the voltage of the pin FA to the voltage value of its pin VDD, so that the input voltage is proportional to the detection end of the input voltage detection circuit.
作为检测方法的又一种具体实施方式,所述方法具体还包括输出电压检测步骤,该步骤涉及的检测电路为输出电压检测电路,该电路也连在主控芯片的检测引脚FA和引脚VDD之间,在变压器消磁阶段,其控制主控芯片检测引脚FA电压和其引脚VDD电压的电压差落在一电阻上,该压差为输出电压的比例值,后传输至输出电压检测电路检测端。As another specific embodiment of the detection method, the method further includes an output voltage detection step, the detection circuit involved in this step is an output voltage detection circuit, and the circuit is also connected to the detection pin FA and the pin of the main control chip. Between VDD, in the degaussing stage of the transformer, the voltage difference between the main control chip detection pin FA voltage and its pin VDD voltage falls on a resistor, the voltage difference is the proportional value of the output voltage, and then transmitted to the output voltage detection circuit detection terminal.
优选地,所述方法还包括谐振周期检测步骤,该步骤涉及的检测电路为谐振周期检测电路,该电路同样连在主控芯片的检测引脚FA和引脚VDD之间,在谐振阶段,主控芯片通过其检测主控芯片检测引脚FA和其引脚VDD电压,比 较两者大小,得出辅助绕组钳位反激变换器主开关管漏极电压谐振周期。Preferably, the method further includes a resonant cycle detection step, the detection circuit involved in this step is a resonant cycle detection circuit, and the circuit is also connected between the detection pin FA and the pin VDD of the main control chip. The control chip detects the voltage of the main control chip's detection pin FA and its pin VDD, compares the magnitudes of the two, and obtains the resonant period of the drain voltage of the main switch tube of the auxiliary winding clamped flyback converter.
本发明还提供一种辅助绕组检测电路,用于辅助绕组钳位反激变换器,辅助绕组钳位反激变换器通过主控芯片实现工作,包括上分压电阻、下分压电阻和输入电压检测电路,上分压电阻一端连接辅助绕组异名端,上分压电阻另一端连接下分压电阻一端,下分压电阻另一端连接辅助绕组同名端,上分压电阻一端和输入电压检测电路一端连接主控芯片引脚VDD,上分压电阻另一端和输入电压检测电路另一端连接主控芯片检测引脚FA,输入电压检测电路用于控制主控芯片检测引脚FA和其引脚VDD电压,使被测参数输入电压的值比例落在输入电压检测电路的检测端,具体为,用于在变压器励磁阶段,钳位主控芯片的检测引脚FA电压至主控芯片引脚VDD电压,使输入电压值比例落在下分压电阻上。The invention also provides an auxiliary winding detection circuit, which is used for the auxiliary winding clamped flyback converter, and the auxiliary winding clamped flyback converter realizes operation through the main control chip, including an upper voltage dividing resistor, a lower voltage dividing resistor and an input voltage In the detection circuit, one end of the upper voltage divider resistor is connected to the other end of the auxiliary winding, the other end of the upper voltage divider resistor is connected to one end of the lower voltage divider resistor, the other end of the lower voltage divider resistor is connected to the same name terminal of the auxiliary winding, and one end of the upper voltage divider resistor is connected to the input voltage detection circuit One end is connected to the main control chip pin VDD, the other end of the upper voltage divider resistor and the other end of the input voltage detection circuit are connected to the main control chip detection pin FA, and the input voltage detection circuit is used to control the main control chip detection pin FA and its pin VDD voltage, so that the value ratio of the input voltage of the measured parameter falls on the detection end of the input voltage detection circuit, specifically, it is used to clamp the voltage of the detection pin FA of the main control chip to the voltage of the main control chip pin VDD during the transformer excitation stage , so that the ratio of the input voltage value falls on the lower voltage divider resistor.
作为输入电压检测电路的一种具体实施方式,包括电源输入放大器407、PMOS管408、PMOS管410、NMOS管409、NMOS管411和NMOS管412,电源输入放大器407的负向输入端和PMOS管410的源极接主控芯片检测引脚FA,电源输入放大器407的正向输入端和PMOS管408的源极接主控芯片引脚VDD,电源输入放大器407的输出端接PMOS管410的栅极和PMOS管408的栅极,PMOS管408的漏极接其栅极和NMOS管409的漏极,NMOS管409的栅极接NMOS管411的漏极和PMOS管410的漏极,NMOS管411的栅极与其漏极短接,且连接NMOS管412的栅极,NMOS管409、NMOS管411和NMOS管412的源极均接地,NMOS管412的漏极为输入电压检测电路检测端。As a specific implementation of the input voltage detection circuit, it includes a power input amplifier 407, a PMOS transistor 408, a PMOS transistor 410, an NMOS transistor 409, an NMOS transistor 411 and an NMOS transistor 412, and the negative input terminal of the power input amplifier 407 and the PMOS transistor. The source of 410 is connected to the detection pin FA of the main control chip, the positive input terminal of the power input amplifier 407 and the source of the PMOS transistor 408 are connected to the main control chip pin VDD, and the output terminal of the power input amplifier 407 is connected to the gate of the PMOS transistor 410 and the gate of the PMOS transistor 408, the drain of the PMOS transistor 408 is connected to its gate and the drain of the NMOS transistor 409, the gate of the NMOS transistor 409 is connected to the drain of the NMOS transistor 411 and the drain of the PMOS transistor 410, the NMOS transistor The gate of 411 is shorted to its drain and connected to the gate of NMOS transistor 412. The sources of NMOS transistor 409, NMOS transistor 411 and NMOS transistor 412 are all grounded, and the drain of NMOS transistor 412 is the detection terminal of the input voltage detection circuit.
根据检测方法,所述辅助绕组检测电路还包括输出电压检测电路;;输出电压检测电路用于控制主控芯片检测引脚FA和其引脚VDD电压,使被测参数输出电压的值比例落在输出电压检测电路的检测端,具体为,用于在变压器消磁阶段,控制主控芯片检测引脚FA电压和其引脚VDD电压的电压差落在一电阻上,该压差为输出电压的比例值,后传输至输出电压检测电路检测端。According to the detection method, the auxiliary winding detection circuit further includes an output voltage detection circuit; the output voltage detection circuit is used to control the main control chip to detect the voltage of the pin FA and its pin VDD, so that the value ratio of the output voltage of the measured parameter falls within The detection terminal of the output voltage detection circuit is specifically used to control the voltage difference between the detection pin FA voltage of the main control chip and its pin VDD voltage to fall on a resistor in the transformer degaussing stage, and the voltage difference is the ratio of the output voltage The value is then transmitted to the detection terminal of the output voltage detection circuit.
作为输出电压检测电路的一种实施方式,包括电源输入放大器413、电阻414、PMOS管415、电阻416、采样开关417和保持电容418,电源输入放大器413的正向输入端接主控芯片检测引脚FA,其负向输入端接电阻414的一端及PMOS管415的源极,其输出端接PMOS管415的栅极,电阻414的另一端接主控芯片引脚VDD,PMOS管415的漏极接电阻416的一端和采样开关417的 一端,采样开关417的另一端接保持电容418的上极板,电阻416的另一端和保持电容418的下极板接地,保持电容418的上极板为输出电压检测电路检测端。As an embodiment of the output voltage detection circuit, it includes a power input amplifier 413, a resistor 414, a PMOS transistor 415, a resistor 416, a sampling switch 417 and a holding capacitor 418. The positive input terminal of the power input amplifier 413 is connected to the detection lead of the main control chip. Pin FA, its negative input terminal is connected to one end of the resistor 414 and the source of the PMOS tube 415, its output terminal is connected to the gate of the PMOS tube 415, the other end of the resistor 414 is connected to the main control chip pin VDD, and the drain of the PMOS tube 415 The pole is connected to one end of the resistor 416 and one end of the sampling switch 417, the other end of the sampling switch 417 is connected to the upper plate of the holding capacitor 418, the other end of the resistor 416 and the lower plate of the holding capacitor 418 are grounded, and the upper plate of the holding capacitor 418 It is the detection terminal of the output voltage detection circuit.
优选地,检测电路还包括谐振周期检测电路,谐振周期检测电路的一端连接主控芯片检测引脚FA,谐振周期检测电路的另一端连接主控芯片引脚VDD,用于检测主控芯片检测引脚FA和其引脚VDD电压,比较两者大小,输出辅助绕组钳位反激变换器主开关管漏极电压谐振周期信号。Preferably, the detection circuit further includes a resonance period detection circuit, one end of the resonance period detection circuit is connected to the detection pin FA of the main control chip, and the other end of the resonance period detection circuit is connected to the main control chip pin VDD for detecting the detection lead of the main control chip. Pin FA and its pin VDD voltage, compare the magnitude of the two, and output the resonant cycle signal of the drain voltage of the main switch tube of the main switch tube of the auxiliary winding clamped flyback converter.
作为谐振周期检测电路的一种实施方式,包括NPN三极管419、NPN三极管420、限流电阻421、限流电阻422、NMOS管423、NMOS管424、NMOS管425、NMOS管426和电流比较器427,NPN三极管419的集电极接自身的基极、NPN三极管420的集电极以及主控芯片引脚VDD,NPN三极管419的发射极接限流电阻421的一端,限流电阻421的另一端接NMOS管423的栅极、NMOS管423的漏极以及NMOS管424的栅极,NMOS管424的漏极接电流比较器427的正向输入端,NPN三极管420的基极接主控芯片检测引脚FA,NPN三极管420的发射极接限流电阻422的一端,限流电阻422的另一端接NMOS管425的栅极、NMOS管425的漏极以及NMOS管426的栅极,NMOS管426的漏极接电流比较器427的负向输入端,NMOS管423、NMOS管424、NMOS管425和NMOS管426的源极均接地,电流比较器427输出端输出谐振周期信号ZCD。As an embodiment of the resonance period detection circuit, it includes an NPN transistor 419 , an NPN transistor 420 , a current limiting resistor 421 , a current limiting resistor 422 , an NMOS transistor 423 , an NMOS transistor 424 , an NMOS transistor 425 , an NMOS transistor 426 and a current comparator 427 , the collector of the NPN transistor 419 is connected to its own base, the collector of the NPN transistor 420 and the main control chip pin VDD, the emitter of the NPN transistor 419 is connected to one end of the current limiting resistor 421, and the other end of the current limiting resistor 421 is connected to the NMOS The gate of the transistor 423, the drain of the NMOS transistor 423 and the gate of the NMOS transistor 424, the drain of the NMOS transistor 424 is connected to the positive input terminal of the current comparator 427, and the base of the NPN transistor 420 is connected to the detection pin of the main control chip FA, the emitter of the NPN transistor 420 is connected to one end of the current limiting resistor 422, and the other end of the current limiting resistor 422 is connected to the gate of the NMOS transistor 425, the drain of the NMOS transistor 425 and the gate of the NMOS transistor 426, and the drain of the NMOS transistor 426. The pole is connected to the negative input terminal of the current comparator 427, the sources of the NMOS transistor 423, NMOS transistor 424, NMOS transistor 425 and NMOS transistor 426 are all grounded, and the output terminal of the current comparator 427 outputs the resonant period signal ZCD.
本发明的有益效果在于:The beneficial effects of the present invention are:
1、基于辅助绕组钳位拓扑的特点提供一种准确的、新型的输入电压和输出电压以及谐振周期的检测方法及电路;1. Provide an accurate and new detection method and circuit for input voltage, output voltage and resonance period based on the characteristics of auxiliary winding clamping topology;
2、基于重要参量的准确检测使得辅助绕组钳位拓扑得以更加简单实用,实现主开关管的零电压开通,便于变换器的高频化和小型化;2. The accurate detection based on important parameters makes the auxiliary winding clamping topology more simple and practical, realizes the zero-voltage turn-on of the main switch tube, and facilitates the high frequency and miniaturization of the converter;
3、基于重要参量的准确检测使得变换器的输入欠压保护、前馈、输出过压保护、原边反馈、准谐振控制等重要功能得以实现。3. Based on the accurate detection of important parameters, important functions such as input undervoltage protection, feedforward, output overvoltage protection, primary side feedback, and quasi-resonant control of the converter can be realized.
附图说明Description of drawings
图1为典型有源钳位反激变换器的电路图;Figure 1 is a circuit diagram of a typical active clamp flyback converter;
图2为典型非互补有源钳位反激变换器的关键信号波形图;Figure 2 is a key signal waveform diagram of a typical non-complementary active clamp flyback converter;
图3为辅助绕组钳位反激变换器的电路图;Fig. 3 is the circuit diagram of the auxiliary winding clamp flyback converter;
图4为本发明实施例的辅助绕组电压检测电路图;FIG. 4 is a circuit diagram of an auxiliary winding voltage detection according to an embodiment of the present invention;
图5为本发明检测电路的关键信号波形图;Fig. 5 is the key signal waveform diagram of the detection circuit of the present invention;
图6为应用本发明检测电路的辅助绕组钳位变换器的关键信号波形图。FIG. 6 is a key signal waveform diagram of the auxiliary winding clamped converter applying the detection circuit of the present invention.
具体实施方式Detailed ways
为了使本发明的目的、技术方案及优点更加清楚明白,以下结合附图4至附图6对本发明进一步详细说明。应当理解,此处所描述的具体实施例仅仅用以解释本发明,并不用于限定本发明。图4中的402即为图3中的310,图4中的405即为图3中的309,图4中的406即为图3中的308。In order to make the objectives, technical solutions and advantages of the present invention clearer, the present invention is further described in detail below with reference to FIG. 4 to FIG. 6 . It should be understood that the specific embodiments described herein are only used to explain the present invention, but not to limit the present invention. 402 in FIG. 4 is 310 in FIG. 3 , 405 in FIG. 4 is 309 in FIG. 3 , and 406 in FIG. 4 is 308 in FIG. 3 .
如图4所示,为本发明辅助绕组检测电路的一种实施方式,包括,上分压电阻403、下分压电阻404、电源输入放大器407、PMOS管408、PMOS管410、NMOS管409、NMOS管411、NMOS管412、电源输入放大器413、电阻414、PMOS管415、电阻416、采样开关417、保持电容418、三极管419、三极管420、电阻421、电阻422、NMOS管423、NMOS管424、NMOS管425、NMOS管426和电流比较器427。As shown in FIG. 4, it is an embodiment of the auxiliary winding detection circuit of the present invention, including an upper voltage dividing resistor 403, a lower voltage dividing resistor 404, a power input amplifier 407, a PMOS transistor 408, a PMOS transistor 410, an NMOS transistor 409, NMOS transistor 411, NMOS transistor 412, power input amplifier 413, resistor 414, PMOS transistor 415, resistor 416, sampling switch 417, holding capacitor 418, transistor 419, transistor 420, resistor 421, resistor 422, NMOS transistor 423, NMOS transistor 424 , NMOS transistor 425 , NMOS transistor 426 and current comparator 427 .
其中,上分压电阻403和下分压电阻404串联跨接在辅助绕组的两端,用于检测辅助绕组两端的电压差。上、下分压电阻的公共端连接主控芯片的检测引脚FA,辅助绕组的高压侧通过去耦电容406给主控芯片的引脚VDD供电。Wherein, the upper voltage dividing resistor 403 and the lower voltage dividing resistor 404 are connected in series across the two ends of the auxiliary winding to detect the voltage difference between the two ends of the auxiliary winding. The common ends of the upper and lower voltage dividing resistors are connected to the detection pin FA of the main control chip, and the high voltage side of the auxiliary winding supplies power to the pin VDD of the main control chip through the decoupling capacitor 406 .
电源输入放大器407、PMOS管408、PMOS管410、NMOS管409、NMOS管411和NMOS管412组成输入电压检测电路。电源输入放大器407的负向输入端接主控芯片检测引脚FA及PMOS管410的源极,正向输入端接主控芯片引脚VDD,电源输入放大器407的输出端接PMOS管410的栅极和PMOS管408的栅极;PMOS管408的漏极接自身的栅极和NMOS管409的漏极,PMOS管408的源极接主控芯片引脚VDD;NMOS管409的栅极接NMOS管411的漏极,NMOS管411的栅极与其漏极短接,且连接NMOS管412的栅极;NMOS管411的漏极还接PMOS管410的漏极;NMOS管409、NMOS管411和NMOS管412的源极均接地;NMOS管412的漏极电流即为检测到的,与输入电压成比例的电流IVIN。The power input amplifier 407 , the PMOS transistor 408 , the PMOS transistor 410 , the NMOS transistor 409 , the NMOS transistor 411 and the NMOS transistor 412 form an input voltage detection circuit. The negative input terminal of the power input amplifier 407 is connected to the detection pin FA of the main control chip and the source of the PMOS transistor 410 , the positive input terminal is connected to the main control chip pin VDD, and the output terminal of the power input amplifier 407 is connected to the gate of the PMOS transistor 410 and the gate of the PMOS tube 408; the drain of the PMOS tube 408 is connected to its own gate and the drain of the NMOS tube 409, the source of the PMOS tube 408 is connected to the main control chip pin VDD; the gate of the NMOS tube 409 is connected to the NMOS tube The drain of the transistor 411, the gate of the NMOS transistor 411 is shorted to its drain, and connected to the gate of the NMOS transistor 412; the drain of the NMOS transistor 411 is also connected to the drain of the PMOS transistor 410; the NMOS transistor 409, the NMOS transistor 411 and the The sources of the NMOS transistors 412 are all grounded; the drain current of the NMOS transistor 412 is the detected current IVIN which is proportional to the input voltage.
具体工作过程如下:在变压器励磁阶段,即图5中的TC阶段,变压器401的原边绕组NP两端电压为VIN,耦合到辅助绕组两端的电压为
Figure PCTCN2022077503-appb-000004
辅助绕组同名端VA,即钳位管402的漏极电压为:
The specific working process is as follows: In the transformer excitation stage, that is, the TC stage in FIG. 5 , the voltage across the primary winding NP of the transformer 401 is VIN, and the voltage coupled to both ends of the auxiliary winding is
Figure PCTCN2022077503-appb-000004
The terminal VA of the same name of the auxiliary winding, that is, the drain voltage of the clamping tube 402 is:
Figure PCTCN2022077503-appb-000005
Figure PCTCN2022077503-appb-000005
如果不对主控芯片检测引脚FA做任何处理,则主控芯片检测引脚FA电压应为:If no processing is performed on the detection pin FA of the main control chip, the voltage of the detection pin FA of the main control chip should be:
Figure PCTCN2022077503-appb-000006
Figure PCTCN2022077503-appb-000006
由于电源输入放大器407和PMOS管410构成负反馈,主控芯片检测引脚FA比主控芯片引脚VDD电压高时,PMOS管410的栅极被拉低,从而增大了PMOS管410的饱和电流,使得主控芯片检测引脚FA电压下降。于是,主控芯片检测引脚FA电压被钳位到主控芯片引脚VDD电压,电阻R1上没有电流流过,流入主控芯片检测引脚FA的电流为:Since the power input amplifier 407 and the PMOS transistor 410 form a negative feedback, when the voltage of the detection pin FA of the main control chip is higher than that of the main control chip pin VDD, the gate of the PMOS transistor 410 is pulled down, thereby increasing the saturation of the PMOS transistor 410 The current causes the voltage of the detection pin FA of the main control chip to drop. Therefore, the voltage of the main control chip detection pin FA is clamped to the main control chip pin VDD voltage, no current flows through the resistor R1, and the current flowing into the main control chip detection pin FA is:
Figure PCTCN2022077503-appb-000007
Figure PCTCN2022077503-appb-000007
电源输入放大器407的输入端皆为高阻抗,可以看成不流入电流,则流入主控芯片检测引脚FA的电流都通过PMOS管410流入NMOS管411的漏极。NMOS管411和NMOS管412构成电流镜,假设电流镜比例为1:m,则检测到的与输入电压VIN成比例的电流为:The input terminals of the power input amplifier 407 are all high impedance, which can be regarded as no current flowing, and the current flowing into the detection pin FA of the main control chip flows into the drain of the NMOS transistor 411 through the PMOS transistor 410 . The NMOS transistor 411 and the NMOS transistor 412 form a current mirror. Assuming that the current mirror ratio is 1:m, the detected current proportional to the input voltage VIN is:
Figure PCTCN2022077503-appb-000008
Figure PCTCN2022077503-appb-000008
实际上,根据图5中辅助绕组同名端VA的电压波形,在励磁开始阶段,辅助绕组同名端VA的电压突然变高,而电源输入放大器407和PMOS管410构成的反馈环路响应需要时间,会造成实际检测的电流IVIN滞后于辅助绕组同名端VA的变化。此处,利用PMOS管408和NMOS管409构成另外的反馈环加快PMOS管410的响应速度。PMOS管410的电流变大,使得NMOS管411的电流变大,NMOS管409和PMOS管411构成电流镜,从而NMOS管409的电流变大;由于PMOS管408连接成二极管的方式,其栅源电压差变大,造成PMOS管410的栅极电压迅速拉低,加快了PMOS管410的响应速度。图5中示出,变压器励磁的TC阶段,主控芯片检测引脚FA电压波形(虚线)实际被钳位到VDD。In fact, according to the voltage waveform of the same-named terminal VA of the auxiliary winding in FIG. 5 , at the beginning of excitation, the voltage of the same-named terminal VA of the auxiliary winding suddenly becomes high, and the feedback loop formed by the power input amplifier 407 and the PMOS transistor 410 takes time to respond. It will cause the actual detected current IVIN to lag behind the change of the same-name terminal VA of the auxiliary winding. Here, another feedback loop is formed by using the PMOS transistor 408 and the NMOS transistor 409 to speed up the response speed of the PMOS transistor 410 . The current of the PMOS transistor 410 becomes larger, so that the current of the NMOS transistor 411 becomes larger, and the NMOS transistor 409 and the PMOS transistor 411 form a current mirror, so that the current of the NMOS transistor 409 becomes larger; The voltage difference increases, causing the gate voltage of the PMOS transistor 410 to be pulled down rapidly, which speeds up the response speed of the PMOS transistor 410 . As shown in Figure 5, in the TC stage of the transformer excitation, the voltage waveform (dotted line) of the detection pin FA of the main control chip is actually clamped to VDD.
输出电压采样电路包括电源输入放大器413、电阻414、PMOS管415、电阻416、采样开关417和保持电容418。电源输入放大器413的正向输入端接主控芯片检测引脚FA,其负向输入端接电阻414的一端及PMOS管415的源极, 其输出端接PMOS管415的栅极,电阻414的另一端接主控芯片引脚VDD,PMOS管415的漏极接电阻416的一端和采样开关417的一端,电阻416的另一端接地,采样开关417的另一端接保持电容418的上极板,保持电容418的下极板接地,保持电容418的上极板电压即为检测的输出电压比例值。The output voltage sampling circuit includes a power input amplifier 413 , a resistor 414 , a PMOS transistor 415 , a resistor 416 , a sampling switch 417 and a holding capacitor 418 . The positive input terminal of the power input amplifier 413 is connected to the detection pin FA of the main control chip, the negative input terminal of the power input amplifier 413 is connected to one end of the resistor 414 and the source of the PMOS transistor 415, The other end is connected to the main control chip pin VDD, the drain of the PMOS transistor 415 is connected to one end of the resistor 416 and one end of the sampling switch 417, the other end of the resistor 416 is grounded, and the other end of the sampling switch 417 is connected to the upper plate of the holding capacitor 418, The lower plate of the holding capacitor 418 is grounded, and the voltage of the upper plate of the holding capacitor 418 is the detected output voltage proportional value.
具体工作过程如下:在变压器的消磁阶段,即图5中的TD阶段,变压器401副边绕组两端的电压为VOUT,耦合到辅助绕组两端的电压为
Figure PCTCN2022077503-appb-000009
主控芯片检测引脚FA的电压为:
The specific working process is as follows: In the degaussing stage of the transformer, that is, the TD stage in Figure 5, the voltage across the secondary winding of the transformer 401 is VOUT, and the voltage coupled to the auxiliary winding is
Figure PCTCN2022077503-appb-000009
The voltage of the main control chip detection pin FA is:
Figure PCTCN2022077503-appb-000010
Figure PCTCN2022077503-appb-000010
由于电源输入放大器413和PMOS管415构成负反馈,主控芯片检测引脚FA电压比主控芯片引脚VDD电压低,则PMOS管415的栅极电压被拉低,PMOS管415的电流增大,在电阻414上的压降增大,最终使得电源输入放大器413的正负输入端的电压相等。这样落在电阻414的电压差为:Since the power input amplifier 413 and the PMOS transistor 415 form a negative feedback, the voltage of the main control chip detection pin FA is lower than the main control chip pin VDD voltage, the gate voltage of the PMOS transistor 415 is pulled down, and the current of the PMOS transistor 415 increases. , the voltage drop on the resistor 414 increases, and finally the voltages of the positive and negative input terminals of the power input amplifier 413 are equalized. Thus the voltage difference across resistor 414 is:
Figure PCTCN2022077503-appb-000011
Figure PCTCN2022077503-appb-000011
流过电阻414的电流同样流过电阻416,所以,电阻416上的电压降为:The current flowing through resistor 414 also flows through resistor 416, so the voltage drop across resistor 416 is:
Figure PCTCN2022077503-appb-000012
Figure PCTCN2022077503-appb-000012
可以设置电阻414的电阻值R 414和电阻416的电阻值R 416相等,则电阻416上的电压降完全可以通过芯片外围的上分压电阻R1和下分压电阻R2设置。 The resistance value R 414 of the resistor 414 and the resistance value R 416 of the resistor 416 can be set equal, and the voltage drop on the resistor 416 can be completely set by the upper voltage dividing resistor R1 and the lower voltage dividing resistor R2 on the periphery of the chip.
采样开关417在变压器消磁阶段开通,将电阻416上电压采样下来并保存在保持电容418中,获得直流的输出电压比例值VO_SAMP。The sampling switch 417 is turned on during the transformer degaussing stage, and the voltage on the resistor 416 is sampled and stored in the holding capacitor 418 to obtain the DC output voltage proportional value VO_SAMP.
谐振周期检测电路包括NPN三极管419、NPN三极管420、限流电阻421、限流电阻422、NMOS管423、NMOS管424、NMOS管425、NMOS管426和电流比较器427。NPN三极管419的集电极接自身的基极、NPN三极管420的集电极以及主控芯片引脚VDD,NPN三极管419的发射极接限流电阻421的一端;限流电阻421的另一端接NMOS管423的栅极、NMOS管423的漏极以及NMOS管424的栅极,NMOS管423和NMOS管424的源极均接地;NMOS管424的漏极接电流比较器427的正向输入端;NPN三极管420的基极接主控芯片检测引脚FA,NPN三极管420的发射极接限流电阻422的一端;限流电阻422 的另一端接NMOS管425的栅极、NMOS管425的漏极以及NMOS管426的栅极,NMOS管425和NMOS管426的源极均接地;NMOS管426的漏极接电流比较器427的负向输入端,电流比较器427输出谐振周期信号ZCD。The resonance period detection circuit includes NPN transistor 419 , NPN transistor 420 , current limiting resistor 421 , current limiting resistor 422 , NMOS transistor 423 , NMOS transistor 424 , NMOS transistor 425 , NMOS transistor 426 and current comparator 427 . The collector of the NPN transistor 419 is connected to its own base, the collector of the NPN transistor 420 and the main control chip pin VDD, the emitter of the NPN transistor 419 is connected to one end of the current limiting resistor 421; the other end of the current limiting resistor 421 is connected to the NMOS transistor The gate of 423, the drain of NMOS tube 423 and the gate of NMOS tube 424, the sources of NMOS tube 423 and NMOS tube 424 are all grounded; the drain of NMOS tube 424 is connected to the positive input terminal of current comparator 427; NPN The base of the transistor 420 is connected to the detection pin FA of the main control chip, the emitter of the NPN transistor 420 is connected to one end of the current limiting resistor 422; the other end of the current limiting resistor 422 is connected to the gate of the NMOS transistor 425, the drain of the NMOS transistor 425 and the The gate of the NMOS transistor 426, the sources of the NMOS transistor 425 and the NMOS transistor 426 are all grounded; the drain of the NMOS transistor 426 is connected to the negative input terminal of the current comparator 427, and the current comparator 427 outputs the resonant period signal ZCD.
具体工作过程如下:NPN三极管420的基极接主控芯片检测引脚FA电压,图5中示出TR谐振阶段,主控芯片检测引脚FA的电压波形是以VDD为中心值的正弦波,其谐振周期与VA相同,即与VDS的谐振周期相同。这样,只要比较主控芯片检测引脚FA和主控芯片引脚VDD的电压大小即可检测谐振周期。主控芯片引脚VDD电压经过NPN三极管419后在电阻421上的压降为:The specific working process is as follows: the base of the NPN transistor 420 is connected to the voltage of the detection pin FA of the main control chip. Figure 5 shows the TR resonance stage. The voltage waveform of the detection pin FA of the main control chip is a sine wave with VDD as the center value. Its resonance period is the same as that of VA, that is, the same as that of VDS. In this way, the resonance period can be detected only by comparing the voltage of the main control chip detection pin FA and the main control chip pin VDD. After the main control chip pin VDD voltage passes through the NPN transistor 419, the voltage drop across the resistor 421 is:
VDD-V BE419-V GS423 VDD- VBE419 - VGS423
其中,V BE419为NPN三极管419的发射结压降,V GS423为NMOS管423的栅源极压降。假设NMOS管423、NMOS管424构成的电流镜比例为1:1,则从电流比较器427正向输入端流出的电流为: Among them, V BE419 is the emitter junction voltage drop of the NPN transistor 419 , and V GS423 is the gate-source voltage drop of the NMOS transistor 423 . Assuming that the ratio of the current mirror formed by the NMOS transistor 423 and the NMOS transistor 424 is 1:1, the current flowing from the positive input terminal of the current comparator 427 is:
Figure PCTCN2022077503-appb-000013
Figure PCTCN2022077503-appb-000013
假设NPN三极管420的尺寸和NPN三极管419相同,限流电阻422的阻值和限流电阻421的阻值(R421)相同,NMOS管425的尺寸和NMOS管423相同,NMOS管425和NMOS管426构成的电流镜比例为1:1,则当主控芯片检测引脚FA电压大于主控芯片引脚VDD电压时,从电流比较器427负向输入端流出电流大于其正向输入端流出电流,电流比较器427输出低电平。同理,主控芯片检测引脚FA电压小于主控芯片引脚VDD电压时,电流比较器427输出高电平。It is assumed that the size of the NPN transistor 420 is the same as that of the NPN transistor 419, the resistance value of the current limiting resistor 422 is the same as the resistance value (R421) of the current limiting resistor 421, the size of the NMOS transistor 425 is the same as that of the NMOS transistor 423, the NMOS transistor 425 and the NMOS transistor 426 The ratio of the formed current mirror is 1:1, then when the voltage of the detection pin FA of the main control chip is greater than the voltage of the pin VDD of the main control chip, the current flowing from the negative input terminal of the current comparator 427 is greater than the current flowing out from the positive input terminal of the current comparator 427. The current comparator 427 outputs a low level. Similarly, when the voltage of the detection pin FA of the main control chip is lower than the voltage of the pin VDD of the main control chip, the current comparator 427 outputs a high level.
图6中给出整个辅助绕组钳位变换器的关键信号波形示意图。每个开关周期的励磁阶段,即主开关管驱动信号GL为高电平阶段,主控芯片检测引脚FA电压被钳位到主控芯片引脚VDD电压,芯片内部检测到与输入电压VIN成比例的电流值IVIN;主控芯片引脚VDD电压和主控芯片检测引脚FA电压的差值被还原到以地为参考电位的电压,如图VO_SAMP坐标轴上的虚线所示,消磁阶段,将还原的电压采样保持,即可得到与输出电压VOUT成比例的检测值;谐振阶段,主控芯片检测引脚FA与主控芯片引脚VDD电压进行比较,输出谐振周期信号ZCD。Figure 6 shows a schematic diagram of the key signal waveforms of the entire auxiliary winding clamp converter. In the excitation phase of each switching cycle, that is, the main switch tube drive signal GL is at a high level, the voltage of the main control chip detection pin FA is clamped to the main control chip pin VDD voltage, and the internal detection of the chip is consistent with the input voltage VIN. The proportional current value IVIN; the difference between the main control chip pin VDD voltage and the main control chip detection pin FA voltage is restored to the voltage with the ground as the reference potential, as shown by the dotted line on the VO_SAMP coordinate axis, in the degaussing stage, By sampling and holding the restored voltage, a detection value proportional to the output voltage VOUT can be obtained; in the resonance stage, the main control chip detection pin FA is compared with the main control chip pin VDD voltage, and the resonance period signal ZCD is output.
图4中的电路,除401、402、405、406外,其他可设置在主控芯片内,构 成主控芯片的一部分。The circuit in Fig. 4, except 401, 402, 405, and 406, can be set in the main control chip and form a part of the main control chip.
应当明确,本发明的实施方式不限于此,根据上述内容,按照本领域的普通技术知识和惯用手段,在不脱离本发明上述基本技术思想前提下,本发明的辅助绕组电压检测电路还有其它的实施方式;因此本发明还可以做出其它多种形式的修改、替换或变更,均落在本发明权利保护范围之内。It should be clear that the embodiments of the present invention are not limited to this. According to the above content, according to the common technical knowledge and conventional means in the field, and without departing from the above-mentioned basic technical idea of the present invention, the auxiliary winding voltage detection circuit of the present invention has other Therefore, the present invention can also make other modifications, substitutions or changes in various forms, which all fall within the protection scope of the present invention.

Claims (9)

  1. 一种辅助绕组检测方法,用于辅助绕组钳位反激变换器,辅助绕组钳位反激变换器中的辅助绕组通过主控芯片控制,其特征在于:在辅助绕组两端跨接上分压电阻403和下分压电阻404串联后组成的两端子网络,将上分压电阻403和下分压电阻404的公共端与主控芯片的检测引脚FA相连,上分压电阻403的另一端与主控芯片引脚VDD相连,下分压电阻404的另一端与辅助绕组311的同名端相连;An auxiliary winding detection method, which is used for the auxiliary winding to clamp a flyback converter, and the auxiliary winding in the auxiliary winding clamped flyback converter is controlled by a main control chip. The resistor 403 and the lower voltage dividing resistor 404 are connected in series to form a two-terminal network. It is connected to the pin VDD of the main control chip, and the other end of the lower voltage dividing resistor 404 is connected to the end of the same name of the auxiliary winding 311;
    所述方法通过控制主控芯片检测引脚FA和其引脚VDD电压,使被测参数的值比例落在对应检测电路的检测端;The method controls the main control chip to detect the pin FA and its pin VDD voltage, so that the value ratio of the measured parameter falls on the detection end of the corresponding detection circuit;
    所述方法具体包括输入电压检测步骤,该步骤涉及的检测电路为输入电压检测电路,该电路连在主控芯片的检测引脚FA和引脚VDD之间,在变压器励磁阶段,其钳位主控芯片检测引脚FA电压到其引脚VDD电压值,使得输入电压成比例落在输入电压检测电路检测端。The method specifically includes an input voltage detection step, the detection circuit involved in this step is an input voltage detection circuit, the circuit is connected between the detection pin FA and the pin VDD of the main control chip, and in the transformer excitation stage, it clamps the main control chip. The control chip detects the voltage of the pin FA to the voltage value of its pin VDD, so that the input voltage is proportional to the detection end of the input voltage detection circuit.
  2. 根据权利要求1所述的辅助绕组检测方法,其特征在于:所述方法具体还包括输出电压检测步骤,该步骤涉及的检测电路为输出电压检测电路,该电路也连在主控芯片的检测引脚FA和引脚VDD之间,在变压器消磁阶段,其控制主控芯片检测引脚FA电压和其引脚VDD电压的电压差落在一电阻上,该压差为输出电压的比例值,后传输至输出电压检测电路检测端。The auxiliary winding detection method according to claim 1, wherein the method further comprises an output voltage detection step, the detection circuit involved in this step is an output voltage detection circuit, and the circuit is also connected to the detection lead of the main control chip. Between pin FA and pin VDD, in the degaussing stage of the transformer, the voltage difference between the main control chip detection pin FA voltage and its pin VDD voltage falls on a resistor, and the voltage difference is the proportional value of the output voltage. It is transmitted to the detection terminal of the output voltage detection circuit.
  3. 根据权利要求1或2所述的检测方法,其特征在于:所述方法还包括谐振周期检测步骤,该步骤涉及的检测电路为谐振周期检测电路,该电路同样连在主控芯片的检测引脚FA和引脚VDD之间,在谐振阶段,主控芯片通过其检测主控芯片检测引脚FA和其引脚VDD电压,比较两者大小,得出辅助绕组钳位反激变换器主开关管漏极电压谐振周期。The detection method according to claim 1 or 2, characterized in that: the method further comprises a resonant cycle detection step, the detection circuit involved in this step is a resonant cycle detection circuit, and the circuit is also connected to the detection pin of the main control chip Between FA and pin VDD, in the resonance stage, the main control chip detects the voltage of pin FA and pin VDD of the main control chip through its detection, and compares the magnitudes of the two to obtain the main switch tube of the flyback converter clamped by the auxiliary winding. Drain voltage resonant period.
  4. 一种辅助绕组检测电路,用于辅助绕组钳位反激变换器,辅助绕组钳位反激变换器通过主控芯片实现工作,其特征在于:包括上分压电阻、下分压电阻和输入电压检测电路,上分压电阻一端连接辅助绕组异名端,上分压电阻另一端连接下分压电阻一端,下分压电阻另一端连接辅助绕组同名端,上分压电阻一端和输入电压检测电路一端连接主控芯片引脚VDD,上分压电阻另一端和输入电 压检测电路另一端连接主控芯片检测引脚FA,An auxiliary winding detection circuit is used for the auxiliary winding clamp flyback converter, and the auxiliary winding clamp flyback converter realizes work through a main control chip, and is characterized in that: it includes an upper voltage dividing resistor, a lower voltage dividing resistor and an input voltage In the detection circuit, one end of the upper voltage divider resistor is connected to the other end of the auxiliary winding, the other end of the upper voltage divider resistor is connected to one end of the lower voltage divider resistor, the other end of the lower voltage divider resistor is connected to the same name terminal of the auxiliary winding, and one end of the upper voltage divider resistor is connected to the input voltage detection circuit One end is connected to the main control chip pin VDD, the other end of the upper voltage divider resistor and the other end of the input voltage detection circuit are connected to the main control chip detection pin FA,
    输入电压检测电路用于控制主控芯片检测引脚FA和其引脚VDD电压,使被测参数输入电压的值比例落在输入电压检测电路的检测端;The input voltage detection circuit is used to control the main control chip to detect the voltage of the pin FA and its pin VDD, so that the value ratio of the input voltage of the measured parameter falls on the detection end of the input voltage detection circuit;
    具体为,用于在变压器励磁阶段,钳位主控芯片的检测引脚FA电压至主控芯片引脚VDD电压,使输入电压值比例落在下分压电阻上。Specifically, in the transformer excitation stage, the voltage of the detection pin FA of the main control chip is clamped to the voltage of the pin VDD of the main control chip, so that the ratio of the input voltage value falls on the lower voltage dividing resistor.
  5. 根据权利要求4所述的检测电路,其特征在于:所述输入电压检测电路包括电源输入放大器407、PMOS管408、PMOS管410、NMOS管409、NMOS管411和NMOS管412,电源输入放大器407的负向输入端和PMOS管410的源极接主控芯片检测引脚FA,电源输入放大器407的正向输入端和PMOS管408的源极接主控芯片引脚VDD,电源输入放大器407的输出端接PMOS管410的栅极和PMOS管408的栅极,PMOS管408的漏极接其栅极和NMOS管409的漏极,NMOS管409的栅极接NMOS管411的漏极和PMOS管410的漏极,NMOS管411的栅极与其漏极短接,且连接NMOS管412的栅极,NMOS管409、NMOS管411和NMOS管412的源极均接地,NMOS管412的漏极为输入电压检测电路检测端。The detection circuit according to claim 4, wherein the input voltage detection circuit comprises a power input amplifier 407, a PMOS transistor 408, a PMOS transistor 410, an NMOS transistor 409, an NMOS transistor 411 and an NMOS transistor 412, and a power supply input amplifier 407 The negative input terminal and the source of the PMOS tube 410 are connected to the detection pin FA of the main control chip, the positive input terminal of the power input amplifier 407 and the source of the PMOS tube 408 are connected to the main control chip pin VDD, and the power input amplifier 407 The output terminal is connected to the gate of the PMOS transistor 410 and the gate of the PMOS transistor 408, the drain of the PMOS transistor 408 is connected to its gate and the drain of the NMOS transistor 409, and the gate of the NMOS transistor 409 is connected to the drain of the NMOS transistor 411 and the PMOS transistor The drain of the transistor 410, the gate of the NMOS transistor 411 is shorted to its drain, and connected to the gate of the NMOS transistor 412, the sources of the NMOS transistor 409, the NMOS transistor 411 and the NMOS transistor 412 are all grounded, and the drain of the NMOS transistor 412 is Input voltage detection circuit detection terminal.
  6. 根据权利要求5所述的检测电路,其特征在于:其特征在于:还包括输出电压检测电路;输出电压检测电路用于控制主控芯片检测引脚FA和其引脚VDD电压,使被测参数输出电压的值比例落在输出电压检测电路的检测端;The detection circuit according to claim 5, characterized in that: it further comprises an output voltage detection circuit; the output voltage detection circuit is used to control the main control chip to detect the voltage of the pin FA and its pin VDD, so that the measured parameter The value ratio of the output voltage falls on the detection end of the output voltage detection circuit;
    具体为,用于在变压器消磁阶段,控制主控芯片检测引脚FA电压和其引脚VDD电压的电压差落在一电阻上,该压差为输出电压的比例值,后传输至输出电压检测电路检测端。Specifically, it is used to control the voltage difference between the main control chip detection pin FA voltage and its pin VDD voltage to fall on a resistor in the transformer degaussing stage, and the voltage difference is the proportional value of the output voltage, and then transmitted to the output voltage detection circuit detection terminal.
  7. 根据权利要求6所述的检测电路,其特征在于:所述的输出电压检测电路包括电源输入放大器413、电阻414、PMOS管415、电阻416、采样开关417和保持电容418,电源输入放大器413的正向输入端接主控芯片检测引脚FA,其负向输入端接电阻414的一端及PMOS管415的源极,其输出端接PMOS管415的栅极,电阻414的另一端接主控芯片引脚VDD,PMOS管415的漏极接电阻416的一端和采样开关417的一端,采样开关417的另一端接保持电容418的上极板,电阻416的另一端和保持电容418的下极板接地,保持电容418的上极板为输出电压检测电路检测端。The detection circuit according to claim 6, wherein the output voltage detection circuit comprises a power input amplifier 413, a resistor 414, a PMOS transistor 415, a resistor 416, a sampling switch 417 and a holding capacitor 418. The positive input terminal is connected to the detection pin FA of the main control chip, the negative input terminal is connected to one end of the resistor 414 and the source of the PMOS tube 415, the output terminal is connected to the gate of the PMOS tube 415, and the other end of the resistor 414 is connected to the main control Chip pin VDD, the drain of the PMOS transistor 415 is connected to one end of the resistor 416 and one end of the sampling switch 417, the other end of the sampling switch 417 is connected to the upper plate of the holding capacitor 418, the other end of the resistor 416 and the lower pole of the holding capacitor 418 The plate is grounded, and the upper plate of the holding capacitor 418 is the detection terminal of the output voltage detection circuit.
  8. 根据权利要求4至7任一所述的检测电路,其特征在于:还包括谐振周期检测电路,谐振周期检测电路的一端连接主控芯片检测引脚FA,谐振周期检测电路的另一端连接主控芯片引脚VDD,用于检测主控芯片检测引脚FA和其引脚VDD电压,比较两者大小,输出辅助绕组钳位反激变换器主开关管漏极电压谐振周期信号。The detection circuit according to any one of claims 4 to 7, further comprising a resonance period detection circuit, one end of the resonance period detection circuit is connected to the detection pin FA of the main control chip, and the other end of the resonance period detection circuit is connected to the main control The chip pin VDD is used to detect the voltage of the main control chip detection pin FA and its pin VDD, compare the magnitudes of the two, and output the resonant period signal of the drain voltage of the main switch tube of the auxiliary winding clamped flyback converter.
  9. 根据权利要求8所述的检测电路,其特征在于:所述谐振周期检测电路包括NPN三极管419、NPN三极管420、限流电阻421、限流电阻422、NMOS管423、NMOS管424、NMOS管425、NMOS管426和电流比较器427,NPN三极管419的集电极接自身的基极、NPN三极管420的集电极以及主控芯片引脚VDD,NPN三极管419的发射极接限流电阻421的一端,限流电阻421的另一端接NMOS管423的栅极、NMOS管423的漏极以及NMOS管424的栅极,NMOS管424的漏极接电流比较器427的正向输入端,NPN三极管420的基极接主控芯片检测引脚FA,NPN三极管420的发射极接限流电阻422的一端,限流电阻422的另一端接NMOS管425的栅极、NMOS管425的漏极以及NMOS管426的栅极,NMOS管426的漏极接电流比较器427的负向输入端,NMOS管423、NMOS管424、NMOS管425和NMOS管426的源极均接地,电流比较器427输出端输出谐振周期信号ZCD。The detection circuit according to claim 8, wherein the resonance period detection circuit comprises an NPN transistor 419, an NPN transistor 420, a current limiting resistor 421, a current limiting resistor 422, an NMOS transistor 423, an NMOS transistor 424, and an NMOS transistor 425 , NMOS transistor 426 and current comparator 427, the collector of NPN transistor 419 is connected to its own base, the collector of NPN transistor 420 and the main control chip pin VDD, the emitter of NPN transistor 419 is connected to one end of the current limiting resistor 421, The other end of the current limiting resistor 421 is connected to the gate of the NMOS transistor 423 , the drain of the NMOS transistor 423 and the gate of the NMOS transistor 424 , the drain of the NMOS transistor 424 is connected to the positive input terminal of the current comparator 427 , and the The base is connected to the detection pin FA of the main control chip, the emitter of the NPN transistor 420 is connected to one end of the current limiting resistor 422 , and the other end of the current limiting resistor 422 is connected to the gate of the NMOS transistor 425 , the drain of the NMOS transistor 425 and the NMOS transistor 426 The gate of the NMOS transistor 426 is connected to the negative input terminal of the current comparator 427, the sources of the NMOS transistor 423, NMOS transistor 424, NMOS transistor 425 and NMOS transistor 426 are all grounded, and the output terminal of the current comparator 427 outputs resonance Periodic signal ZCD.
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