WO2022170829A1 - 光子集成芯片及光发射组件和光收发模块 - Google Patents

光子集成芯片及光发射组件和光收发模块 Download PDF

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Publication number
WO2022170829A1
WO2022170829A1 PCT/CN2021/135614 CN2021135614W WO2022170829A1 WO 2022170829 A1 WO2022170829 A1 WO 2022170829A1 CN 2021135614 W CN2021135614 W CN 2021135614W WO 2022170829 A1 WO2022170829 A1 WO 2022170829A1
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optical
light
integrated chip
photonic integrated
modulators
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PCT/CN2021/135614
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English (en)
French (fr)
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季梦溪
李显尧
孙雨舟
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苏州旭创科技有限公司
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Publication of WO2022170829A1 publication Critical patent/WO2022170829A1/zh

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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/40—Transceivers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/50—Transmitters
    • H04B10/516—Details of coding or modulation

Definitions

  • the present application relates to the technical field of optical communication, and in particular, to a photonic integrated chip, an optical emission component, and an optical transceiver module.
  • the requirements for information transmission rate are getting higher and higher.
  • the rate of optical module is also getting higher and higher.
  • the bit rate of a single channel in an optical module has already faced a bottleneck, and more and more 4-channel or 8-channel parallel optical designs are used to improve the optical module rate.
  • Commonly used, such as FR4 is a single-interface 4-channel optical module
  • 2 ⁇ FR4 is a dual-interface 8-channel optical module.
  • the volume requirements of optical modules are getting smaller and smaller, and photonic integrated chips with high integration and low cost, such as silicon photonic chips, have become the first choice for miniaturized optical module packaging.
  • optical modulators For optical modules designed in parallel with multiple channels, the first consideration is the miniaturization of optical modulators with multiple channels. Integrated optical modulation chips are already very mature technologies, such as lithium niobate optical modulators or silicon optical modulators.
  • Integrated optical modulation chips are already very mature technologies, such as lithium niobate optical modulators or silicon optical modulators.
  • an optical modulator 20 ′ of 8 channels four optical splitters 10 ′ of 1 ⁇ 2 and two wavelength divisions are usually integrated and designed on a photonic integrated chip 100 ′.
  • the 1 ⁇ 2 beam splitter 10' is usually a multi-mode interference coupler, and its beam splitting ratio is fixed at 1:1 equal division.
  • the external four-channel non-wavelength laser is divided into 8 beams by 4 1 ⁇ 2 beam splitters 10' and transmitted to 8 optical modulators 20', respectively modulated by the optical modulator 20' of the corresponding channel and then output 8 channels
  • the 8-channel carrier optical signal is then combined by two wavelength division multiplexers 30' into two composite optical signals each containing 4 channels and output through two optical transmitting interfaces.
  • the mainstream multi-channel parallel optical modules mainly have 4 channels and 8 channels in parallel, such as FR4 and 2 ⁇ FR4 optical modules.
  • the parallel optical path designed by the above photonic integrated chip is only suitable for 2 ⁇ FR4 optical modules.
  • FR4 a separately designed photonic integrated chip integrating 4 optical modulators needs to be used.
  • the application scenario is single, and optical modules of different specifications need to be equipped with Various specifications of materials, complex material management, high inventory pressure, etc.
  • the purpose of this application is to provide a photonic integrated chip, an optical emission component, and an optical transceiver module, which can be applied to optical modules of different specifications, which can simplify material management and reduce inventory pressure.
  • the present application provides a photonic integrated chip, including a substrate on which at least one light modulation unit is arranged; the light modulation unit includes a 1 ⁇ N tunable optical splitter and N an optical modulator, the N is an integer greater than 1; the 1 ⁇ N tunable optical splitter includes an input waveguide, a dimming structure and N output waveguides; the N output waveguides are respectively connected to the N optical modulators A single beam of incident light is input through the input waveguide, the light adjustment structure processes the incident light to adjust the size of the sub-beams distributed to the N output waveguides, and each of the output waveguides adjusts the received sub-beams It is transmitted to the corresponding light modulator, and the light modulator modulates the sub-beam and outputs it.
  • the 1 ⁇ N tunable optical splitter includes N-1 Mach-Zehnder interference structures; the N-1 Mach-Zehnder interference structures are cascaded in sequence, or the N-1 Mach-Zehnder interference structures The Mach-Zehnder interference structures are cascaded and paralleled with each other;
  • a single said Mach-Zehnder interference structure includes a 1x2 coupler, two connecting arms and a 2x2 coupler connected in sequence, a single said Mach-Zehnder interference structure includes a 2x2 coupler connected in sequence a 2 ⁇ 2 coupler; the dimming structure is a phase shifter arranged on at least one connecting arm of the Mach-Zehnder interference structure, and the phase shifter is used to adjust the The splitting ratio of the two split beams output by the 2 ⁇ 2 coupler.
  • the light modulator is a modulator based on a Mach-Zehnder interference structure.
  • the number of the optical modulation units is M, and M is an integer greater than 1; N wavelength division multiplexers are further provided on the substrate, and a single wavelength division multiplexer is provided.
  • the device includes M input ports and one output port, the M input ports are respectively connected to the M optical modulation units, and the N optical modulators of each optical modulation unit are respectively connected to the N wavelength division units multiplexer.
  • the number of the optical modulation units is 4, the number of optical modulators in each of the optical modulation units is 2; the number of the wavelength division multiplexers is 2, each The wavelength division multiplexer includes 4 input ports;
  • One of the two optical modulators of each of the optical modulation units is connected to one of the input ports of the wavelength division multiplexer, and the other optical modulator is connected to the two wavelength division multiplexers.
  • One of the input ports of the other wavelength division multiplexer of the division multiplexer is connected to the two wavelength division multiplexers.
  • the present application also provides a light emitting component, including the photonic integrated chip described in any of the above embodiments.
  • the light emitting component further includes at least one laser and a coupling unit; the light beam emitted by the laser is coupled into the corresponding light modulation unit through the coupling unit, and modulated by the light modulation unit After that, N channels of carrier optical signals are output.
  • the present application further provides an optical transceiver module, including the photonic integrated chip described in any of the above embodiments; the optical transceiver module further includes at least one laser and a coupling unit; a light beam emitted by a single laser passes through the coupling unit It is coupled into a single optical modulation unit, and after being modulated by the optical modulation unit, N channels of carrier optical signals are output.
  • the substrate of the photonic integrated chip is further provided with a number of photodetectors; the number of the photodetectors is consistent with the number of the optical modulators.
  • the substrate of the photonic integrated chip is further provided with N wavelength demultiplexers; the N wavelength demultiplexers are used to The carrier optical signal is decomposed and transmitted to the corresponding optical detectors respectively.
  • a light splitter with adjustable light splitting ratio is designed on the photonic integrated chip integrating the light modulator, and the photonic integrated chip is suitable for optical modules of different specifications by adjusting the light splitting ratio, which solves the problem of the original light modulator chip.
  • a single applicable scenario leads to complex material management and high inventory pressure, which can effectively simplify material management and reduce inventory pressure.
  • Figure 1 is a schematic structural diagram of a photonic integrated chip of a commonly used 8-channel parallel optical modulator
  • FIG. 2 is a simplified schematic structural diagram of the photonic integrated chip according to Embodiment 1 of the application;
  • Embodiment 3 is a schematic structural diagram of a single light modulation unit in Embodiment 1;
  • FIG. 4 is a simplified schematic structural diagram of the photonic integrated chip according to Embodiment 2 of the present application.
  • FIG. 5 is a schematic structural diagram of a single light modulation unit in Embodiment 2;
  • FIG. 6 is a schematic structural diagram of the light emitting assembly according to Embodiment 3 of the present application.
  • FIG. 7 is a schematic structural diagram of an optical transceiver module according to Embodiment 4 of the present application.
  • spatially relative positions are used herein for convenience of description to describe an element or feature as shown in the figures relative to one another. A relationship to another unit or feature.
  • the term spatially relative position may be intended to encompass different orientations of the device in use or operation in addition to the orientation shown in the figures. For example, if the device in the figures is turned over, elements described as “below” or “beneath” other elements or features would then be oriented “above” the other elements or features. Thus, the exemplary term “below” can encompass both an orientation of above and below.
  • the device may be otherwise oriented (rotated 90 degrees or otherwise) and the spatially relative descriptors used herein interpreted accordingly.
  • this embodiment provides a photonic integrated chip 100
  • the photonic integrated chip 100 includes a substrate 101 , and at least one light modulation unit 40 is provided on the substrate 101 .
  • a single light modulation unit 40 includes a 1 ⁇ N tunable optical splitter 10 and N light modulators 20a and 20b, where N is an integer greater than 1.
  • the aforementioned 1 ⁇ N tunable optical splitter 10 includes an input waveguide 11 , a dimming structure 12 and N output waveguides 13 , and the N output waveguides 13 are respectively connected to the N optical modulators 20 a and 20 b.
  • a single beam of incident light is input through the input waveguide 11 of the 1 ⁇ N tunable optical splitter 10, and the dimming structure 12 adjusts and processes the incident light according to the use requirements to adjust the power of the split beams distributed to the N output waveguides 13.
  • Each output waveguide 13 transmits the respective received sub-beams to the corresponding optical modulators 20a, 20b, and outputs a carrier optical signal after being modulated by each optical modulator 10.
  • the number of optical modulation units 40 is M, and M is an integer greater than 1; N wavelength division multiplexers 30 are further provided on the substrate 101 , and a single wavelength division multiplexer 30 includes M input ports and one output port, the M input ports are respectively connected to the output ends of the single light modulators 20a or 20b of the M light modulation units 40 .
  • the photonic integrated chip may not be provided with a wavelength division multiplexer, and when used, a free-space wavelength division multiplexer is provided on the output optical path of the photonic integrated chip.
  • the 1 ⁇ N tunable optical splitter 10 includes N-1 Mach-Zehnder interference structures; N-1 Mach-Zehnder interference structures are cascaded in sequence, or N-1 Mach-Zehnder interference structures cascade and parallel to each other.
  • a single Mach-Zehnder interference structure includes a 1 ⁇ 2 coupler 14 , two connecting arms 15 and a 2 ⁇ 2 coupler 16 which are connected in sequence.
  • the dimming structure 12 is a phase shifter disposed on at least one connecting arm 15 of the Mach-Zehnder interference structure, and the phase shifter is used to adjust the splitting ratio of the two-way split beams output by the 2 ⁇ 2 coupler 16 to achieve 1 Adjustment of the splitting ratio between the output waveguides 13 of the ⁇ N tunable optical splitter 10 .
  • a single Mach-Zehnder interference structure may also include a 2x2 coupler, two connecting arms and a 2x2 coupler connected in sequence.
  • each light modulator unit 40 includes a 1 ⁇ 2 tunable optical splitter 10 and two optical modulators 20a, 20b, forming an optical modulator chip with 2 ⁇ 4 channels.
  • the 1 ⁇ 2 tunable optical splitter 10 is a Mach-Zehnder interference structure, including a 1 ⁇ 2 coupler 14 , two connecting arms 15 and a 2 ⁇ 2 coupler 16 connected in sequence.
  • the 1 ⁇ 2 tunable The dimming structure 12 of the optical splitter 10 is a phase shifter arranged on one of the connecting arms 15 .
  • the phase shifter is used to adjust the phase of the light beam transmitted in the connecting arm 15 .
  • the light modulators 20a and 20b are modulators based on the Mach-Zehnder interference structure.
  • the wavelength division multiplexer 30 may use a cascaded wavelength division multiplexer based on a Mach-Zehnder interference structure, or may use a wavelength division multiplexer based on other structures such as a multimode interference structure.
  • the optical splitting ratio of the 1 ⁇ 2 adjustable optical splitter 10 is adjusted by the phase shifter to be 1:1, so that the two output waveguides are 13 respectively transmits the two sub-beams with approximately equal power to the corresponding light modulators 20a, 20b.
  • the carrier optical signals output by the two optical modulators 20a and 20b of the same optical modulation unit 40 are respectively transmitted to the two wavelength division multiplexers 30, and are respectively WDM combined with the carrier optical signals of other optical modulation units to form a composite light. signal output.
  • one of the two optical modulators 20a and 20b in the four optical modulation units 40 is connected to the same wavelength division multiplexer, and the other optical modulator 20b is connected to the other On the wavelength division multiplexer, the wavelength division multiplexing of two groups of four-channel optical signals is realized.
  • the splitting ratio of the 1 ⁇ 2 tunable optical splitter 10 can be adjusted to 1:0 through the phase shifter, so that all the beams are distributed to one of the outputs In the waveguide 13, the output waveguide 13 is transmitted to the corresponding optical modulator (eg, the optical modulator 20a).
  • the optical power in the other output waveguide 13 is almost 0, and the optical modulator (eg, the optical modulator 20b) connected to it does not work, that is, only one optical modulator 20a in each of the four optical modulation units 40 works.
  • the carrier optical signals output by the optical modulators 20a operating in the four optical modulation units 40 are all transmitted to the same wavelength division multiplexer 30, and the wavelength division multiplexer 30 wavelength division multiplexes the four paths of the carrier optical signals into one path composite. Optical signal output.
  • Optical modules of different specifications can use this photonic integrated chip to modulate signals, which can effectively simplify material management and reduce inventory pressure.
  • the photonic integrated chip 100 is designed based on an SOI (Silicon-On-Insulator, silicon-on-insulator) structure, including a silicon substrate 101 and a buried oxide layer 102 stacked in sequence. and the top layer silicon 103, the above-mentioned 1 ⁇ N tunable optical splitter 10, light modulators 20a, 20b and wavelength division multiplexer 30 are all formed by etching the top layer silicon 103, and the top layer silicon 103 can also be covered with an upper cladding layer 104.
  • SOI Silicon-On-Insulator, silicon-on-insulator
  • the above-mentioned phase shifter (dimming structure 12 ) includes a heating electrode 124 disposed near the connecting arm 121 (a part of the connecting arm 15 ), and the heating electrode 124 is electrically connected to the metal electrode 122 above the upper cladding layer 104 through the conductive via 123 When connected, an external power source supplies power to the heating electrode 124 through the metal electrode 122 .
  • the photonic integrated chip may also be based on a semiconductor chip structure made of III-V group materials, such as a lithium niobate chip and the like.
  • the phase shifter can also use other heating structures to achieve thermal phase modulation.
  • each light modulator unit 40 includes a 1 ⁇ 3 tunable optical splitter 10 and 3 light modulators 20a, 20b and 20c, forming a 3 ⁇ 4 channel light modulator chip. As shown in FIG. 4
  • the 1 ⁇ 3 tunable optical splitter 10 is a cascade of two Mach-Zehnder interference structures 10a and 10b, and a single Mach-Zehnder interference structure includes a 1 ⁇ 2 coupler, two connection arms and a 2 ⁇ 2 coupler.
  • the first Mach-Zehnder interference structure 10a includes a first 1 ⁇ 2 coupler 14a, two first connecting arms 15a and a first 2 ⁇ 2 coupler 16a
  • the second Mach-Zehnder interference structure 10b includes a second 1 ⁇ 2 2 coupler 14b, two second link arms 15b and a second 2x2 coupler 16b.
  • the second 1 ⁇ 2 coupler 14b of the second Mach-Zehnder interference structure 10b is connected to one of the output ports of the first 2 ⁇ 2 coupler 16a of the first Mach-Zehnder interference structure 10a, the first 2 ⁇ 2 coupler The other output port of 16a and the two output ports of the second 2x2 coupler 16b are connected to the three output waveguides 13, respectively.
  • the dimming structure includes a first phase shifter 12a and a second phase shifter 12b respectively disposed on the first connecting arm 15a and the second connecting arm 15b.
  • the light splitting ratio of the three output waveguides needs to be adjusted arbitrarily, and the three output waveguides 13 are respectively connected to the above-mentioned three optical modulators 20a, 20b and 20c.
  • a phase shifter may be provided only on the first connecting arm or the second connecting arm according to requirements.
  • the number M of light modulation units that can be integrated on the photonic integrated chip is not limited, and the number N of 1 ⁇ N tunable light splitters of a single light modulation unit can also be designed according to actual needs.
  • the 1 ⁇ N tunable optical splitter can be three Mach-Zehnder interference structures cascaded in sequence, or a combination of three Mach-Zehnder interference structures in cascade and parallel, such as two Mach-Zehnder interference structures.
  • the input ports of the Zehnder interference structure are respectively connected to the two output ports of another Mach-Zehnder interference structure.
  • this embodiment provides a light emitting component
  • the light emitting component includes the photonic integrated chip 100 described in the foregoing embodiment 1 or 2, and at least one laser 200 and a coupling unit 300 .
  • the light beam emitted by the single laser 200 is coupled into the single optical modulation unit 40 of the photonic integrated chip 100 through the above-mentioned coupling unit 300, and after being modulated by the optical modulation unit 40, N channels of carrier optical signals are output, and the N channels of carrier optical signals are respectively processed by N waves.
  • the demultiplexer 30 and the carrier optical signals of other optical modulation units are combined into N-channel composite optical signals for output.
  • the coupling unit 300 is a coupling lens matched with each laser 200 respectively, and the laser light emitted by the laser 200 is coupled into the photonic integrated chip 100 by means of end-face coupling.
  • the laser light emitted by the laser can also be coupled into the photonic integrated chip by means of vertical coupling, for example, the coupling unit includes a vertical coupling grating and/or an optical path reflection structure, etc.
  • the laser is coupled into the photonic integrated chip through the vertical coupling photosynthesis/or optical path reflection structure.
  • the light emitting component includes 4 lasers 200 with different wavelengths
  • the photonic integrated chip 100 is provided with 4 light modulation units 40
  • a single light modulation unit 40 includes a 1 ⁇ 2 adjustable beam splitter. 10 and two light modulators 20a, 20b.
  • the four laser beams of different wavelengths emitted by the four lasers 200 are respectively coupled into the four light modulation units 40 of the photonic integrated chip 100 through the four coupling lenses of the coupling unit 300, and each laser beam is split by a 1 ⁇ 2 tunable light.
  • the device 10 divides two sub-beams with the same power and inputs them into the respective optical modulators 20a and 20b, and outputs a carrier optical signal after being modulated by the respective optical modulators 20a and 20b.
  • the two paths of carrier optical signals of the same optical modulation unit 40 are respectively transmitted to the two wavelength division multiplexers 30, and each is combined with the carrier optical signals of other optical modulation units into two paths of composite optical signals for output. At this time, it can be applied to an optical module with 2 optical emission interfaces and 8 channels.
  • the 1 ⁇ 2 tunable optical splitter 10 can also adjust the splitting ratio to 1:0, that is, the laser beams received by a single 1 ⁇ 2 tunable optical splitter 10 are all transmitted to the same optical modulation via one of the output waveguides There is no optical transmission in the other output waveguide (such as the optical modulator 20a), and the optical modulator 20b connected to it does not work at this time. Only one optical modulator 20a in a single optical modulation unit 40 works, and outputs one carrier optical signal, and the four carrier optical signals output by the four optical modulation units 40 are combined into one composite optical signal through the same wavelength division multiplexer 30 and output. . At this time, it can be applied to optical modules with 4 channels of single optical emission interface.
  • This embodiment provides an optical transceiver module, the optical transceiver module includes the photonic integrated chip 100 described in the foregoing embodiment 1 or 2, a wavelength demultiplexer, and a photodetector.
  • the WDM 60 and the photodetector 50 are integrated in the above-mentioned photonic integrated chip 100 , and the number of the photodetector 50 is the same as the number of the optical modulators 20a and 20b.
  • the number of wavelength division multiplexers 60 is N, which is consistent with the number of optical divisions of the 1 ⁇ N tunable optical splitter 10.
  • the N wavelength division multiplexers 60 are used to decompose the N channels of carrier optical signals received by the optical transceiver module. Then, they are respectively transmitted to the corresponding photodetectors 50 .
  • the optical transceiver module further includes at least one laser 200 and a coupling unit 300.
  • the light beam emitted by the single laser 200 is coupled to the single optical modulation unit 40 of the photonic integrated chip 100 through the above-mentioned coupling unit 300, and after being modulated by the optical modulation unit 40, N channels are output.
  • the carrier optical signal, the N-channel carrier optical signal is then combined with the carrier optical signal of other optical modulation units through the N wavelength division multiplexers 30 respectively into N-channel composite optical signal output.
  • the coupling unit 300 is a coupling lens matched with each laser 200 respectively.

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Abstract

本申请提供一种光子集成芯片及光发射组件和光收发模块，该光子集成芯片包括设于衬底上的至少一个光调制单元；单个所述光调制单元包括1×N可调分光器和N个光调制器，N为大于1的整数；1×N可调分光器包括一个输入波导、调光结构和N个输出波导；N个输出波导分别连接N个光调制器；单束入射光经输入波导输入，调光结构处理入射光以调节分配到N个输出波导的分光束的大小，各输出波导将各自接收的分光束传输到相应的光调制器内，各光调制器分别对各分光束调制之后输出。在集成光调制器的光子集成芯片上设计了可调节分光比的分光器，通过调节分光比使得该光子集成芯片适用于不同规格的光模块，可有效简化物料管理、降低库存压力。

Description

光子集成芯片及光发射组件和光收发模块 技术领域
本申请涉及光通信技术领域，尤其涉及光子集成芯片及光发射组件和光收发模块。
 背景技术
高速信息时代，对信息传输速率要求越来越高，光模块作为光纤通信系统中的核心器件，其速率也越来越高。光模块内单通道的比特率已经面临瓶颈，越来越多地采用4通道或8通道的并行光学设计来提高光模块速率。常用的比如FR4为单接口4通道的光模块，2×FR4为双接口8通道的光模块。同时，为了提高光模块密度，光模块体积要求越来越小，集成度高、成本低的光子集成芯片，如硅光芯片等，成为小型化光模块封装的首选。
多通道并行设计的光模块，首先考虑的便是多个通道的光调制器的小型化，集成光调制芯片已是非常成熟的技术，如铌酸锂光调制器或硅光调制器等。在2×FR4的光模块中，如图1所示，通常在光子集成芯片100’上集成设计8个通道的光调制器20’和4个1×2的分光器10’及两个波分复用器30’。1×2的分光器10’通常为多模干涉耦合器，其分光比固定为1:1等分。外部四路不通波长的激光分别经4个1×2的分光器10’分成8路分光束传输到8个光调制器20’上，分别经相应通道的光调制器20’调制之后输出8路载波光信号，8路载波光信号再经两个波分复用器30’合为两路各自包含4通道的复合光信号经两个光发射接口输出。
目前主流的多通道并行光模块主要有4通道和8通道并行，例如FR4和2×FR4的光模块。上述光子集成芯片设计的并行光路只适用于2×FR4的光模块中，在FR4中则需要采用另外设计的集成4个光调制器的光子集成芯片，应用场景单一，不同规格的光模块需要配备多种规格的物料，物料管理复杂，库存压力较大等。
 技术问题
本申请的目的在于提供一种光子集成芯片及光发射组件和光收发模块，该光子集成芯片可适用不同规格的光模块，可简化物料管理、降低库存压力。
 技术解决方案
为了实现上述目的之一，本申请提供了一种光子集成芯片，包括衬底，所述衬底上设有至少一个光调制单元；所述光调制单元包括1×N可调分光器和N个光调制器，所述N为大于1的整数；所述1×N可调分光器包括一个输入波导、调光结构和N个输出波导；所述N个输出波导分别连接所述N个光调制器；单束入射光经所述输入波导输入，所述调光结构处理所述入射光以调节分配到所述N个输出波导的分光束的大小，各所述输出波导将各自接收的分光束传输到相应的所述光调制器内，所述光调制器对所述分光束调制之后输出。
作为实施方式的进一步改进，所述1×N可调分光器包括N-1个马赫-曾德尔干涉结构；所述N-1个马赫-曾德尔干涉结构依次级联，或者所述N-1个马赫-曾德尔干涉结构相互级联和并联；
单个所述马赫-曾德尔干涉结构包括依次连接的一个1×2耦合器、两个连接臂和一个2×2耦合器，单个所述马赫-曾德尔干涉结构包括依次连接的一个2×2耦合器、两个连接臂和一个2×2耦合器；所述调光结构为设于所述马赫-曾德尔干涉结构的至少一个连接臂上的相移器，所述相移器用于调节所述2×2耦合器输出的两路分光束的分光比。
作为实施方式的进一步改进，所述光调制器为基于马赫-曾德尔干涉结构的调制器。
作为实施方式的进一步改进，所述光调制单元的个数为M，所述M为大于1的整数；所述衬底上还设有N个波分复用器，单个所述波分复用器包括M个输入端口和一个输出端口，所述M个输入端口分别连接所述M个光调制单元，每个所述光调制单元的N个所述光调制器分别连接所述N个波分复用器。
作为实施方式的进一步改进，所述光调制单元的个数为4，每个所述光调制单元的光调制器的数量为2个；所述波分复用器的数量为2个，每个所述波分复用器包括4个输入端口；
每个所述光调制单元的2个所述光调制器的其中一个光调制器连接一个所述波分复用器的其中一个输入端口，另一个所述光调制器连接到2个所述波分复用器的另一个波分复用器的其中一个输入端口。
本申请还提供了一种光发射组件，包括上述任一实施例所述的光子集成芯片。
作为实施方式的进一步改进，所述光发射组件还包括至少一个激光器和耦合单元；所述激光器发出的光束经所述耦合单元耦合到相应的所述光调制单元内，经所述光调制单元调制之后输出N路载波光信号。
本申请另外提供了一种光收发模块，包括上述任一实施例所述的光子集成芯片；所述光收发模块还包括至少一个激光器和耦合单元；单个所述激光器发出的光束经所述耦合单元耦合到单个所述光调制单元内，经所述光调制单元调制之后输出N路载波光信号。
作为实施方式的进一步改进，所述光子集成芯片的所述衬底上还设有若干光探测器；所述光探测器的数量与所述光调制器的数量一致。
作为实施方式的进一步改进，所述光子集成芯片的所述衬底上还设有N个波分解复用器；所述N个波分解复用器用于将所述光收发模块接收到的N路载波光信号分解后分别传输给对应的所述光探测器。
 有益效果
本申请的有益效果：在集成光调制器的光子集成芯片上设计了可调节分光比的分光器，通过调节分光比使得该光子集成芯片适用于不同规格的光模块，解决了原光调制器芯片适用场景单一导致物料管理复杂、库存压力大的问题，可有效简化物料管理、降低库存压力。
 附图说明
图1为常用8通道并行的光调制器的光子集成芯片结构示意图；
图2为本申请实施例1的光子集成芯片简化结构示意图；
图3为实施例1中单个光调制单元的结构示意图；
图4为本申请实施例2的光子集成芯片简化结构示意图；
图5为实施例2中单个光调制单元的结构示意图；
图6为本申请实施例3的光发射组件结构示意图；
图7为本申请实施例4的光收发模块结构示意图。
 本发明的实施方式
以下将结合附图所示的具体实施方式对本申请进行详细描述。但这些实施方式并不限制本申请，本领域的普通技术人员根据这些实施方式所做出的结构、方法、或功能上的变换均包含在本申请的保护范围内。
在本申请的各个图示中，为了便于图示，结构或部分的某些尺寸会相对于其它结构或部分夸大，因此，仅用于图示本申请的主题的基本结构。
另外，本文使用的例如“上”、“上方”、“下”、“下方”等表示空间相对位置的术语是出于便于说明的目的来描述如附图中所示的一个单元或特征相对于另一个单元或特征的关系。空间相对位置的术语可以旨在包括设备在使用或工作中除了图中所示方位以外的不同方位。例如，如果将图中的设备翻转，则被描述为位于其他单元或特征“下方”或“之下”的单元将位于其他单元或特征“上方”。因此，示例性术语“下方”可以囊括上方和下方这两种方位。设备可以以其他方式被定向（旋转90度或其他朝向），并相应地解释本文使用的与空间相关的描述语。当元件或层被称为在另一部件或层“上”、与另一部件或层“连接”时，其可以直接在该另一部件或层上、连接到该另一部件或层，或者可以存在中间元件或层。
实施例1
如图2和3所示，该实施例提供一种光子集成芯片100，该光子集成芯片100包括衬底101，衬底101上设有至少一个光调制单元40。其中，单个光调制单元40包括1×N可调分光器10和N个光调制器20a、20b，N为大于1的整数。上述1×N可调分光器10包括一个输入波导11、调光结构12和N个输出波导13，N个输出波导13分别连接上述N个光调制器20a、20b。单束入射光经1×N可调分光器10的输入波导11输入，调光结构12根据使用要求调节处理该入射光以调节分配到N个输出波导13的分光束的功率大小，各输出波导13将各自接收的分光束传输到相应的光调制器20a、20b内，经各光调制器10调制之后输出载波光信号。该实施例中，光调制单元40的个数为M，M为大于1的整数；衬底101上还设有N个波分复用器30，单个波分复用器30包括M个输入端口和一个输出端口，M个输入端口分别连接M个光调制单元40的单个光调制器20a或20b的输出端。在其它实施例中，光子集成芯片也可以不设波分复用器，使用时，在光子集成芯片的输出光路上设置自由空间的波分复用器。
该实施例中，1×N可调分光器10包括N-1个马赫-曾德尔干涉结构；N-1个马赫-曾德尔干涉结构依次级联，或者N-1个马赫-曾德尔干涉结构相互级联和并联。其中，单个马赫-曾德尔干涉结构包括依次连接的一个1×2耦合器14、两个连接臂15和一个2×2耦合器16。调光结构12为设于马赫-曾德尔干涉结构的至少一个连接臂15上的相移器，该相移器用于调节上述2×2耦合器16输出的两路分光束的分光比，实现1×N可调分光器10各输出波导13之间的分光比的调节。在它实施例中，单个马赫-曾德尔干涉结构也可以包括依次连接的一个2×2耦合器、两个连接臂和一个2×2耦合器。
该实施例中，以N=2，M=4为例进行说明，即该实施例中，光子集成芯片100上集成了4个光调制单元40，如图3所示，每个光调制器单元40包括一个1×2可调分光器10和2个光调制器20a、20b，形成具有2×4个通道的光调制器芯片。其中，1×2可调分光器10为一个马赫-曾德尔干涉结构，包括依次连接的一个1×2耦合器14、两个连接臂15和一个2×2耦合器16。1×2可调分光器10的调光结构12为设于其中一个连接臂15上的相移器，通过该相移器调节该连接臂15内传输的光束的相位，可调节经2×2耦合器16耦合之后分配到两个输出波导13内的分光比。该实施例中，光调制器20a、20b为基于马赫-曾德尔干涉结构的调制器。波分复用器30可以采用基于马赫-曾德尔干涉结构级联的波分复用器，也可以采用基于多模干涉结构等其它结构的波分复用器。
当用于2个光发射接口8个通道（如2×FR4等）的光模块中时，通过相移器调节1×2可调分光器10的分光比为1:1，使两个输出波导13分别将两束功率大致相等的分光束传输到相应的光调制器20a、20b内。同一光调制单元40的两个光调制器20a、20b输出的载波光信号分别传输到两个波分复用器30上，各自与其它光调制单元的载波光信号波分复用合为复合光信号输出。例如，4个光调制单元40中各自的两个光调制器20a、20b中的其中一个光调制器20a都连接到同一个波分复用器上，另一个光调制器20b都连接到另一个波分复用器上，实现两组四通道光信号的波分复用。当用于单个光发射接口4个通道（如FR4）的光模块中时，可通过相移器调节1×2可调分光器10的分光比为1:0，使光束全部分配到其中一个输出波导13中，经该输出波导13传输到相应的光调制器（如光调制器20a）内。此时，另外一个输出波导13中的光功率几乎为0，与之相连的光调制器（如光调制器20b）不工作，即4个光调制单元40中各只有一个光调制器20a工作。4个光调制单元40内工作的光调制器20a输出的载波光信号都传输到同一个波分复用器30内，波分复用器30将四路载波光信号波分复用为一路复合光信号输出。不同规格的光模块（如FR4/DR4/SR4/LR4或2×FR4/2×DR4/2×SR4/2×LR4等）都可采用该光子集成芯片调制信号，可有效简化物料管理、降低库存压力。
如图3中A处的横截面所示，该实施例中，光子集成芯片100基于SOI（Silicon-On-Insulator，绝缘体上硅）结构设计，包括依次层叠的硅衬底101、埋氧层102和顶层硅103，上述1×N可调分光器10、光调制器20a、20b和波分复用器30均由顶层硅103蚀刻形成，顶层硅103上还可覆盖上包层104。上述相移器（调光结构12）包括设于连接臂121（连接臂15的一部分）附近的加热电极124，该加热电极124通过导电过孔123与上包层104上方的金属电极122电性连接，外部电源通过金属电极122给加热电极124供电。调节加热电极124的电压或电流，改变相应连接臂121的光学参数，如折射率等，从而改变该路分光的相位，使其在2×2耦合器16上与另一路分光束耦合，重新分配分光比，分成两路分别由两个输出波导13传输到不同的光调制器20a、20b内。在其它实施例中，光子集成芯片也可以基于Ⅲ-Ⅴ族材料制作的半导体芯片结构，如铌酸锂芯片等。相移器也可以采用其它加热结构实现热调相。
实施例2
如图4和5所示，该实施例的光子集成芯片结构与实施例1类似，不同的是，该实施例中，N=3，M=4，即该实施例中，光子集成芯片100a上集成了4个光调制单元40，如图4所示，每个光调制器单元40包括一个1×3可调分光器10和3个光调制器20a、20b和20c，形成具有3×4个通道的光调制器芯片。如图5所示，其中，1×3可调分光器10为两个马赫-曾德尔干涉结构级联10a、10b，单个马赫-曾德尔干涉结构包括依次连接的一个1×2耦合器、两个连接臂和一个2×2耦合器。第一马赫-曾德尔干涉结构10a包括第一1×2耦合器14a、两个第一连接臂15a和第一2×2耦合器16a，第二马赫-曾德尔干涉结构10b包括第二1×2耦合器14b、两个第二连接臂15b和第二2×2耦合器16b。第二马赫-曾德尔干涉结构10b的第二1×2耦合器14b连接第一马赫-曾德尔干涉结构10a的第一2×2耦合器16a的其中一个输出端口，第一2×2耦合器16a的另一个输出端口和第二2×2耦合器16b的两个输出端口分别连接三个输出波导13。该实施例中，调光结构包括分别设于第一连接臂15a和第二连接臂15b上的第一相移器12a和第二相移器12b，通过两个相移器12a、12b可根据需要任意调节三个输出波导的分光比，三个输出波导13分别连接上述三个光调制器20a、20b和20c。在其它实施例中，也可以根据需求只在第一连接臂或第二连接臂上设置相移器。
在其它实施例中，光子集成芯片上可集成的光调制单元的数量M不受限制，单个光调制单元的1×N可调分光器分光数量N也可根据实际需要进行设计。例如N=4时，1×N可调分光器可以为3个马赫-曾德尔干涉结构依次级联，或者是3个马赫-曾德尔干涉结构级联和并联的组合，如其中两个马赫-曾德尔干涉结构的输入端口分别连接另一个马赫-曾德尔干涉结构的两个输出端口。N=5时，1×N可调分光器可以为4个马赫-曾德尔干涉结构依次级联，或者是4个马赫-曾德尔干涉结构级联和并联的组合，以此类推！
实施例3
如图6所示，该实施例提供了一种光发射组件，该光发射组件包括上述实施例1或2所述的光子集成芯片100，以及至少一个激光器200和耦合单元300。单个激光器200发出的光束经上述耦合单元300耦合到光子集成芯片100的单个光调制单元40内，经光调制单元调制40之后输出N路载波光信号，N路载波光信号再分别经N个波分复用器30与其它光调制单元的载波光信号合为N路复合光信号输出。该实施例中，耦合单元300为分别与各激光器200相配合的耦合透镜，激光器200发射的激光通过端面耦合的方式耦合到光子集成芯片100内。在其它实施例中，激光器发射的激光也可以通过垂直耦合的方式耦合到光子集成芯片内，如耦合单元包括垂直耦合光栅和/或光路反射结构等，激光器设于光子集成芯片上方，激光器发射的激光经垂直耦合光合/或光路反射结构耦合到光子集成芯片内。
以2×4个调制通道为例，该光发射组件包括4个不同波长的激光器200，光子集成芯片100上设有4个光调制单元40，单个光调制单元40包括一个1×2可调分光器10和2个光调制器20a、20b。4个激光器200发出的4束不同波长的激光束经耦合单元300的4个耦合透镜分别耦合到光子集成芯片100的4个光调制单元40内，各激光束分别经各1×2可调分光器10分成两束相同功率的分光束输入到各光调制器20a、20b内，经各光调制器20a、20b调制后输出载波光信号。同一光调制单元40的两路载波光信号分别传输到两个波分复用器30上，各自与其它光调制单元的载波光信号合为两路复合光信号输出。此时可适用于2个光发射接口8通道的光模块。
该光发射组件中，1×2可调分光器10也可调节分光比为1:0，即单个1×2可调分光器10接收的激光束全部经其中一路输出波导传输到同一个光调制器（如光调制器20a）内，另一路输出波导内没有光传输，与之相连的光调制器20b此时不工作。单个光调制单元40内只有一个光调制器20a工作，输出一路载波光信号，4个光调制单元40输出的4路载波光信号再经同一个波分复用器30合为一路复合光信号输出。此时可适用于单光发射接口4通道的光模块。
实施例4
该实施例提供了一种光收发模块，该光收发模块包括上述实施例1或2所述的光子集成芯片100、波分解复用器和光探测器。如图7所示，该实施例中，波分解复用器60和光探测器50集成于上述光子集成芯片100内，光探测器50的数量与光调制器20a和20b的数量一致。波分解复用器60的数量为N个，与1×N可调分光器10的分光数量一致，N个波分解复用器60用于将该光收发模块接收到的N路载波光信号分解后分别传输给对应的光探测器50。
该光收发模块还包括至少一个激光器200和耦合单元300，单个激光器200发出的光束经上述耦合单元300耦合到光子集成芯片100的单个光调制单元40内，经光调制单元40调制之后输出N路载波光信号，N路载波光信号再分别经N个波分复用器30与其它光调制单元的载波光信号合为N路复合光信号输出。该实施例中，耦合单元300为分别与各激光器200相配合的耦合透镜。
上文所列出的一系列的详细说明仅仅是针对本申请的可行性实施方式的具体说明，它们并非用以限制本申请的保护范围，凡未脱离本申请技艺精神所作的等效实施方式或变更均应包含在本申请的保护范围之内。

Claims (10)

  1. 一种光子集成芯片，包括衬底，所述衬底上设有至少一个光调制单元；其特征在于：所述光调制单元包括1×N可调分光器和N个光调制器，所述N为大于1的整数；所述1×N可调分光器包括一个输入波导、调光结构和N个输出波导；所述N个输出波导分别连接所述N个光调制器；单束入射光经所述输入波导输入，所述调光结构处理所述入射光以调节分配到所述N个输出波导的分光束的大小，各所述输出波导将各自接收的分光束传输到相应的所述光调制器内，所述光调制器对所述分光束调制之后输出。
  2. 根据权利要求1所述的光子集成芯片，其特征在于：所述1×N可调分光器包括N-1个马赫-曾德尔干涉结构；所述N-1个马赫-曾德尔干涉结构依次级联，或者所述N-1个马赫-曾德尔干涉结构相互级联和并联；
    单个所述马赫-曾德尔干涉结构包括依次连接的一个1×2耦合器、两个连接臂和一个2×2耦合器，单个所述马赫-曾德尔干涉结构包括依次连接的一个2×2耦合器、两个连接臂和一个2×2耦合器；
    所述调光结构为设于所述马赫-曾德尔干涉结构的至少一个连接臂上的相移器，所述相移器用于调节所述2×2耦合器输出的两路分光束的分光比。
  3. 根据权利要求1所述的光子集成芯片，其特征在于：所述光调制器为基于马赫-曾德尔干涉结构的调制器。
  4. 根据权利要求1-3任一项所述的光子集成芯片，其特征在于：
    所述光调制单元的个数为M，所述M为大于1的整数；
    所述衬底上还设有N个波分复用器，单个所述波分复用器包括M个输入端口和一个输出端口，所述M个输入端口分别连接所述M个光调制单元，每个所述光调制单元的N个所述光调制器分别连接所述N个波分复用器。
  5. 根据权利要求4所述的光子集成芯片，其特征在于：
    所述光调制单元的个数为4，每个所述光调制单元的光调制器的数量为2个；所述波分复用器的数量为2个，每个所述波分复用器包括4个输入端口；
    每个所述光调制单元的2个所述光调制器的其中一个光调制器连接一个所述波分复用器的其中一个输入端口，另一个所述光调制器连接到2个所述波分复用器的另一个波分复用器的其中一个输入端口。
  6. 一种光发射组件，其特征在于：包括权利要求1-5任一项所述的光子集成芯片。
  7. 根据权利要求6所述的光发射组件，其特征在于：所述光发射组件还包括至少一个激光器和耦合单元；所述激光器发出的光束经所述耦合单元耦合到相应的所述光调制单元内，经所述光调制单元调制之后输出N路载波光信号。
  8. 一种光收发模块，其特征在于：包括权利要求1-5任一项所述的光子集成芯片；
    所述光收发模块还包括至少一个激光器和耦合单元；单个所述激光器发出的光束经所述耦合单元耦合到单个所述光调制单元内，经所述光调制单元调制之后输出N路载波光信号。
  9. 根据权利要求8所述的光收发模块，其特征在于：所述光子集成芯片的所述衬底上还设有若干光探测器；所述光探测器的数量与所述光调制器的数量一致。
  10. 根据权利要求9所述的光收发模块，其特征在于：所述光子集成芯片的所述衬底上还设有N个波分解复用器；所述N个波分解复用器用于将所述光收发模块接收到的N路载波光信号分解后分别传输给对应的所述光探测器。
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