WO2022169125A1 - Lift pin assembly and substrate processing device including same - Google Patents

Lift pin assembly and substrate processing device including same Download PDF

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Publication number
WO2022169125A1
WO2022169125A1 PCT/KR2022/000468 KR2022000468W WO2022169125A1 WO 2022169125 A1 WO2022169125 A1 WO 2022169125A1 KR 2022000468 W KR2022000468 W KR 2022000468W WO 2022169125 A1 WO2022169125 A1 WO 2022169125A1
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WIPO (PCT)
Prior art keywords
lift
shaft
pin
substrate processing
space
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PCT/KR2022/000468
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French (fr)
Korean (ko)
Inventor
심광보
이상열
김진웅
유승예
고은서
Original Assignee
피에스케이 주식회사
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Publication of WO2022169125A1 publication Critical patent/WO2022169125A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/427—Stripping or agents therefor using plasma means only
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches

Definitions

  • the present invention relates to a lift pin assembly and a substrate processing apparatus having the same.
  • a semiconductor device is manufactured by repeatedly performing a plurality of processes on a substrate. For example, a process of depositing a material film such as an insulating film or a conductive film on a substrate, a process of patterning the deposited material film into a shape required for device formation, a process of removing residues formed on the substrate during the entire process, and a substrate Alternatively, there is a process of implanting a predetermined impurity into the material film.
  • a process is performed by loading a substrate into a substrate susceptor installed inside a process chamber performing each process, performing a necessary process, and when the process is completed, unloading the substrate to the outside and moving it for the next process is repeated as needed.
  • each process chamber must stably seat the substrate on the substrate susceptor.
  • a robot arm for transferring the substrate onto the substrate susceptor and a lift pin assembly for mounting the substrate on the substrate susceptor are used.
  • a high-temperature susceptor is used to increase the temperature of the substrate.
  • a problem may occur in a rapid temperature increase and a high-temperature process. Such problems cause problems such as deformation and detachment of the film quality.
  • An object of the present invention is to provide a lift pin assembly capable of precisely mounting a lift pin and a substrate processing apparatus having the same.
  • An object of the present invention is to provide a lift pin assembly capable of preventing inclination of the lift pin and a substrate processing apparatus having the same.
  • a driving member a horizontal bar elevating/lowering in the vertical direction by the driving member; at least one pin support member having lift pins installed and moving in a vertical direction according to the rising/lowering of the horizontal bar; and a guide member for guiding the movement of the pin support member;
  • the pin support member may include: a lift hoop on which the lift pims are installed; a shaft supporting the lift hoop; a bellows provided to surround the shaft; and a shaft ring provided on an outer circumferential surface of the shaft to prevent play between the shaft and the bellows may be provided.
  • the bellows may include an upper flange connected to the lower end of the chamber; An upper end is fixed to the upper flange, and a lower end includes a corrugated pipe fixed to a bracket to which the shaft is fixed, and the shaft ring may be installed on the shaft so as to be positioned on the same line with the upper flange.
  • the lift pin may have a lower end portion having a fastening portion fastened to the lift hoop and an upper portion portion having a contact portion in contact with the substrate, and the upper portion may have a flat flat surface.
  • the lower portion includes a threaded portion and a support portion provided on the screw portion; and an insertion groove into which a washer for height adjustment is inserted between the screw part and the support part.
  • the screw portion so that a cut surface is formed by cutting the outer circumferential surface on which the thread is formed in the longitudinal direction may be provided so as to be left and right symmetrical.
  • the washer for adjusting the height may have a through hole corresponding to the flat cross-sectional shape of the screw portion.
  • the lift hoop may include a ring-shaped ring portion having fastening holes to which the lift pins are mounted; and a support portion supported by the shaft, and may have a concave portion concavely formed between the support portion and the ring portion.
  • a process chamber comprising: first and second susceptors installed spaced apart from each other in the process chamber and having a plurality of pin holes; a first pin support member having a plurality of lift pins respectively corresponding to the pin holes of the first susceptor; a second pin support member having a plurality of lift pins respectively corresponding to the pin holes of the second susceptor; and a driving member for vertically raising or lowering the first and second pin support members;
  • Each of the first pin support member and the second pin support member includes: a lift hoop on which the lift pins are installed; a shaft supporting the lift hoop; a bellows provided to surround the shaft; and a shaft ring provided on an outer circumferential surface of the shaft to prevent play between the shaft and the bellows.
  • the bellows may include an upper flange connected to the lower end of the chamber; An upper end is fixed to the upper flange, and a lower end includes a corrugated pipe fixed to a bracket to which the shaft is fixed, and the shaft ring may be installed on the shaft so as to be positioned on the same line with the upper flange.
  • the lift pin may have a lower end portion having a fastening portion fastened to the lift hoop and an upper portion portion having a contact portion in contact with the substrate, and the upper portion may have a flat flat surface.
  • the lower portion includes a threaded portion and a support portion provided on the screw portion; and an insertion groove into which a washer for height adjustment is inserted between the screw part and the support part.
  • the screw portion so that a cut surface is formed by cutting the outer circumferential surface on which the thread is formed in the longitudinal direction may be provided so as to be left and right symmetrical.
  • the washer for adjusting the height may have a through hole corresponding to the flat cross-sectional shape of the screw portion.
  • the lift hoop may include a ring-shaped ring portion having fastening holes to which the lift pins are mounted; and a support portion supported by the shaft, and may have a concave portion concavely formed between the support portion and the ring portion.
  • it may further include a sagging prevention jig fitted into the pinhole from the upper surface of the first and second susceptors and holding the verticality of the lift pin while the lift pin is fastened to the fastening hole of the lift hoop. have.
  • the anti-sag jig may have a through hole into which the lift pin is inserted.
  • the lift pins may be fastened from upper surfaces of the first and second susceptors to the fastening holes of the lift hoops through the pinholes.
  • the lift pin assembly is installed between the bracket of the first and second pin support members and the horizontal bar, and the movement direction of the first and second pin support members moved by the first and second guide members; It may further include a floating joint for allowing an angular difference between the moving directions of the horizontal bar.
  • the process chamber divides the inside of the process chamber so that a first space in which the first susceptor is positioned, a second space in which the second susceptor is positioned, and the first space and the second space have the same structure. It may further include a partition wall.
  • the substrate processing apparatus is installed in an upper portion of the first space of the process chamber, and a first supply member for supplying plasma and a process gas to the first space, and a second space of the process chamber. It may further include a second supply member installed on the upper portion of the injection device for supplying plasma and process gas to the second space.
  • FIG. 1 is an external view of a substrate processing apparatus according to a preferred embodiment of the present invention.
  • FIG. 2 is a front cross-sectional view of a substrate processing apparatus according to a preferred embodiment of the present invention.
  • FIG 3 is a plan view showing the inside of a process chamber in a substrate processing apparatus according to an exemplary embodiment of the present invention.
  • FIG. 4 is a plan view illustrating first and second pin support members of a lift pin assembly positioned inside a process chamber in a substrate processing apparatus according to an exemplary embodiment of the present invention.
  • FIG. 7 is a view showing a lift pin.
  • FIG. 8 is a view showing a lower portion of a lift pin.
  • FIG. 9 is a view for explaining a state in which a washer is mounted on a lift pin.
  • FIG. 10 is a cross-sectional view of a main part showing a state in which a lift pin is mounted. .
  • 11 is a view showing a lift hoop.
  • a plasma ashing apparatus for removing unnecessary photosensitizers remaining on a substrate after a photolithography process using plasma will be described as an example.
  • the technical spirit of the present invention is not limited thereto, and may be applied to other types of apparatuses for processing semiconductor substrates using plasma or other types of apparatuses for processing semiconductor substrates using process gases.
  • microwaves are used as an example as an energy source for generating plasma in this embodiment
  • various energy sources such as high-frequency power sources may be used in addition to this.
  • a semiconductor for ashing the surface of a substrate for manufacturing a semiconductor device (hereinafter referred to as a substrate) using radicals generated from a plasma source unit. manufacturing device.
  • the substrate processing apparatus 10 includes a process chamber 100 providing a predetermined sealed atmosphere, first and second susceptors 110a and 110b, and an exhaust member 150 . ), a partition member 160 , a plasma generating member 140 , a gas supply member 130 having first and second gas distribution plates 170a and 170b , and a lift pin assembly 200 .
  • the process chamber 100 provides a process space for performing an ashing process therein.
  • the process chamber 100 has a structure capable of simultaneously processing two substrates. That is, the process space of the process chamber 100 is divided into a first space (a) and a second space (b). Each of the first space (a) and the second space (b) is a space in which the ashing process is performed on the sheet of substrate accommodated during the process.
  • a substrate entrance 102 is formed through which substrates enter and exit the first space (a) and the second space (b), respectively.
  • the substrate entrance 102 is opened and closed by an opening/closing door 104 such as a gate valve.
  • a central exhaust port 116 and a side exhaust port 117 through which gas in the process chamber 100 are exhausted are provided on the lower wall (bottom surface) of the process chamber 100 .
  • the central exhaust port 116 is located between the first space (a) and the second space (b) to exhaust gas in the first and second spaces (a, b), and the side exhaust port 117 is the susceptor 110a , 110b) is positioned one at a time in the first and second spaces (a, b) symmetrical to the central exhaust port 116, respectively.
  • the process chamber 110 having two spaces (a, b) has been described as an example, but the number of partition spaces in the process chamber 100 may be three or more.
  • first and second susceptors 110a and 110b for supporting the substrate during the process are respectively installed. Electrode chucks may be used as the first and second susceptors 110a and 110b. In addition, the first and second susceptors 110a and 110b seat the substrate W during the process and heat it to a preset process temperature. The first and second susceptors 110a and 110b are maintained at an appropriate temperature (200-400° C.) at which the photoresist on the substrate w can be removed. The first and second susceptors 110a and 110b have pin holes 112 in which lift pins are located. A power applying device (not shown) is connected to the first and second susceptors 110a and 110b. The power applicator applies preset bias power to the first and second susceptors 110a and 110b.
  • the exhaust member 150 is for forming the inside of the process chamber 100 in a vacuum state, and for discharging reaction by-products generated while the ashing process is performed.
  • the exhaust member 150 includes a central exhaust pipe 152 , a side exhaust pipe 154 , and a pressure reducing member (not shown).
  • the central exhaust pipe 152 exhausts the gas inside the process chamber 110 to the outside.
  • the central exhaust pipe 152 is connected to the central exhaust port 116 of the process chamber 100 to exhaust both gases in the first and second spaces a and b.
  • the side exhaust pipe 154 is respectively connected to the side exhaust pipe 117 , and the side exhaust pipe 154 is again connected to the central exhaust pipe 152 .
  • a pressure reducing member (not shown) is installed in the central exhaust pipe 154 .
  • the pressure reducing member forcibly sucks in gas in the first and second spaces a and b to reduce the internal pressure of the process chamber 100 .
  • a vacuum pump may be used as the pressure reducing member.
  • the partition member 160 includes a partition wall 162 that partitions the inside of the process chamber 110 so that the first space (a) and the second space (b) have the same structure.
  • the partition wall 162 is vertically installed in the center inside the process chamber 110 .
  • the partition wall 162 partitions the inside of the process chamber 110 so that each of the first space (a) and the second space (b) is symmetrical.
  • the partition member 160 is provided for separate exhaust of the first space (a) and the second space (b).
  • the power applied to the first susceptor 110a of the first space (a) and the power applied to the second susceptor 110b of the second space (b) are not affected by each other.
  • the first space (a) and the second space (b) are partitioned so as not to be separated. Therefore, the material of the partition member 160 is preferably an insulator.
  • the partition member 160 is provided with the integral partition wall 162 to partition the process chamber 100 as an example, but the structure and shape of the partition member and the installation method are variously changed and modified.
  • the partition member 160 may have a structure in which the partition walls 162 are separable from each other, and the partition walls 162 may be formed in plurality.
  • the partition wall 162 of the partition member 160 may be fixedly installed in the process chamber 110 .
  • the plasma generating member 140 generates plasma during a process and supplies it to the process chamber 100 .
  • a remote plasma generating apparatus is used as the plasma generating member 140 .
  • the plasma generating member 140 includes a first generating member 142 and a second generating member 144 .
  • the first generating member 142 supplies plasma to the first supplying member 132 during the process, and the second generating member 144 supplies plasma to the second supplying member 134 during the process.
  • Each of the first and second generating members 142 and 144 includes magnetrons 142a and 144a, wave guide lines 142b and 144b, and gas supply lines 142c and 144c. include The magnetrons 142a and 144a generate microwaves for plasma generation during processing.
  • the waveguide 142b guides the microwave generated by the magnetron 142a to the gas supply pipe 142c
  • the waveguide 144b guides the microwave generated by the magnetron 144a to each gas supply pipe 144c.
  • the gas supply pipes 142c and 144c supply reaction gases during the process. At this time, plasma is generated from the reaction gas supplied through the gas supply pipes 142c and 144c by the microwaves generated by the magnetrons 142a and 144b.
  • the plasma generated by the plasma generating member 140 is supplied to the gas supply member 130 during the ashing process.
  • the first supplying member 132 and the second supplying member 134 of the gas supplying member 130 enter the first space (a) and the second space (b) of the process chamber 110 during the process of plasma and The process gas is sprayed.
  • the first supply member 132 is installed in the upper portion of the first space a of the process chamber 100 , and includes a cover 136a providing a funnel-shaped flow path connected to the first generating member 142 , and the cover ( 136a) has a first gas distribution plate (Gas Distribution Plate, GDP; 170a) installed to face the substrate (w) in the lower portion.
  • the second supply member 134 is installed in the upper portion of the second space b of the process chamber 100 , and includes a cover 136b providing a funnel-shaped flow path connected to the second generating member 144 , and the cover ( 136b) has first and second gas distribution plates 170a and 170b installed to face the substrate w at the lower portion.
  • the first supply member 132 injects plasma and a process gas toward the substrate W seated on the first susceptor 110a of the first space (a) during the process, and the second supply member 134 is used for the process Plasma and process gas are sprayed toward the substrate W seated on the second susceptors 110a and 110b of the second space b.
  • the first and second gas distribution plates 170a and 170b have a plurality of gas distribution passages that are asymmetrically formed so that the densities of the process gas and plasma provided to the first and second spaces a and b are uniformly formed.
  • the first and second gas distribution plates 170a and 170b have a first edge portion in which gas injection passages 172a of the same size are formed, and a gas injection portion adjacent to the substrate entrance 112 and formed in the first edge portion. It has asymmetrical gas injection passages 172a and 172b that can be divided by a second edge portion in which the gas injection passages 172b, which are relatively larger than the passages 172a, are formed.
  • FIG. 5 is an exploded perspective view of the lift pin assembly
  • FIG. 6 is a front view of the lift pin assembly.
  • the lift pin assembly 200 has a configuration for stably raising/lowering the substrate from the first susceptor 110a and the second susceptor 110b.
  • the lift pin assembly 200 includes a driving member 210 , a horizontal bar 220 , and first and second pin support members 230a and 230b. It includes first and second guide members 240a and 240b and a floating joint 250 .
  • the lift pin assembly 200 of the present invention is a device capable of lifting a substrate up/down from two susceptors with one driving member.
  • the driving member 210 is installed on the outer bottom surface of the process chamber 100 .
  • the driving member 210 may be an actuator such as a linear motor or a cylinder.
  • the horizontal bar 220 is connected to the driving member 210 and ascends/decreases in the vertical direction by the driving member 210 .
  • the horizontal bar 220 is made in the shape of an elongated bar.
  • a first pin support member 230a and a second pin support member 230b are installed at both ends of the horizontal stand 220 , respectively.
  • the first and second pin support members 230a and 230b are connected and supported to the horizontal stand 220 by the floating joint 250 .
  • the first pin support member 230a is responsible for loading/unloading the substrate from the first susceptor 110a
  • the second pin support member 230b is for loading/unloading the substrate from the second susceptor 110b.
  • the first and second pin support members 230a and 230b support the lift hoop 270 in which three lift pins 260 positioned in the pinholes 112 are vertically installed, and the lift hoop 270, and process the process. It includes a shaft 236 installed through the outer bottom surface of the chamber 100 , a bellows 280 installed at the lower end of the shaft 236 , and a bracket 239 to which the shaft 236 is fixed.
  • a floating joint 250 is connected to the bottom of the bracket 239 , and one side thereof is connected to the first and second guide members 240 .
  • the lift hoop 270 has a horseshoe shape with one open end, but the shape may be variously changed.
  • the floating joint 250 is installed between the bracket 239 and the horizontal bar 220 of the first and second pin support members 230a and 230b, and is installed between the first and second pin support members 230a and 230b to move by the first and second guide members 240 .
  • the floating joint 250 removes the linear motion obstruction of the first and second pin support members 230a and 230b caused by the horizontal position of the horizontal bar 220 being misaligned during the assembly process or due to a machining error, etc. .
  • the lift pin assembly 200 is mechanically connected so that the driving member 210 disposed in the center and the first and second guide members 240 disposed at both sides simultaneously linearly move. Accordingly, the moving direction of the horizontal bar 220 moved by the driving member 210 , the horizontal state of the horizontal bar 220 , and the first and second pin support members guided by the first and second guide members 240 ( Even if the movement direction of 230a and 230b is not set accurately during the assembly process, the floating joint 250 induces the movement direction of the first and second pin support members 230a and 230b in a vertical straight direction, which is caused by angular deviation. vibration can be prevented.
  • the first and second guide members 240 guide the movement of the first and second pin support members 230a and 230b, and are installed on the outer bottom surface of the process chamber 100 .
  • the lift pin assembly 200 is formed by the driving member 210 in a state in which the lift pins 260 support the bottom surface of the substrate w, which is placed by a robot (not shown) according to the opening of the substrate entrance 102 . It is lowered (down position) to stably place the substrate on the upper surfaces of the first and second susceptors 110a and 110b.
  • FIG. 7 is a view showing a lift pin
  • FIG. 8 is a view showing a lower portion of the lift pin
  • FIG. 9 is a view for explaining a state in which a washer is mounted on the lift pin.
  • the lift pin 260 may include a lower portion 264 having a fastening portion fastened to the lift hoop 270 and an upper portion 262 having a contact portion in contact with the substrate. .
  • the top portion 262 has a flat flat surface 263 . The flat surface 263 helps the operator to fasten the lift pin 260 to the lift hoop 270 with a constant torque.
  • the lower portion 264 is a screw portion 265 and a support portion 266 provided on the screw portion 265, and a washer 269 for height adjustment between the screw portion 265 and the support portion 266 is inserted. It has a groove 267 .
  • the threaded portion 265 has a cut surface 265a obtained by cutting the outer circumferential surface on which the thread is formed in the longitudinal direction.
  • the cut surface 265a is provided to be left and right symmetrical.
  • the washer 269 for height adjustment has a through hole 269a corresponding to the shape of the flat cross-section 265a of the screw portion 265 .
  • the short length L1 of the through hole 269a corresponds to the diameter of the insertion groove 267 .
  • the washer 269 for height adjustment is positioned in the insertion groove 267 through the screw portion 265 and then rotates 90 degrees to prevent separation from the screw portion 265 .
  • FIG. 10 is a cross-sectional view of a main part showing a state in which a lift pin is mounted.
  • the lift pin has a fastening hole 273 of the lift hoop 270 through the pinhole 112 from the upper surface of the first susceptor 110a in a state where the washer 269 for height adjustment is mounted as shown in FIG. 9 . ) is connected to In this process, an anti-sag jig 290 for preventing the lift pin 260 from being tilted is used.
  • the anti-sagging jig 290 is fitted into the pinhole 112 from the upper surface of the first susceptor 110a in a state in which the lift pin 260 is inserted into the pinhole 112 .
  • the anti-sag jig 290 holds the verticality of the lift pin 260 while the lift pin 260 is fastened to the fastening hole 273 of the lift hoop 270 .
  • the anti-sag jig 290 has a through hole 292 into which the lift pin 260 is inserted.
  • the anti-sag jig 290 is removed after the mounting of the lift pin 260 is completed.
  • the diameter of the pinhole 112 is provided to be larger than the diameter of the lift pin 260 .
  • 11 is a view showing a lift hoop.
  • the lift hoop 270 includes a ring-shaped ring portion 272 having fastening holes 273 to which lift pins 260 are mounted; and a support portion 274 supported on the shaft 236 . And between the support portion 274 and the ring portion 272 has a concave portion 279 formed to be concave.
  • the bellows 280 includes an upper flange 282 and a corrugated pipe 284 connected to the lower end of the chamber 100 .
  • the corrugated pipe 284 may have an upper end fixed to the upper flange 282 and a lower end fixed to a bracket 239 to which the shaft 236 is fixed.
  • the shaft 236 is positioned perpendicular to the inner space of the bellows 280 , and a shaft ring 237 is provided on an outer circumferential surface of the shaft 236 .
  • the shaft ring 237 may minimize play between the shaft 9236 and the bellows 280 .
  • the shaft ring 237 is positioned flush with the upper flange 282 .
  • the shaft ring 237 is provided on the outer circumferential surface of the shaft 236 , it is possible to minimize the inclination of the shaft 236 . Accordingly, it is possible to maintain the same height between the respective driving units by preventing a minute inclination generated due to the clearance between the shaft 236 and the bellows 280 .

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Abstract

Provided is a lift pin assembly. In an embodiment, the lift pin assembly may comprise: a driving member; a horizontal bar that is raised and lowered vertically by the driving member; at least one pin support member which moves vertically according to the raising and lowering of the horizontal bar and in which lift pins are installed; and a guide member that guides the movement of the pin support member. The pin support member may include: a lift hoop in which the lift pins are installed; a shaft for supporting the lift hoop; a bellows provided surrounding the shaft; and a shaft ring provided on the outer circumferential surface of the shaft so as to prevent a gap from forming between the shaft and the bellows.

Description

리프트 핀 어셈블리 및 그것을 구비한 기판 처리 장치Lift pin assembly and substrate processing apparatus having same
본 발명은 리프트 핀 어셈블리 및 그것을 구비한 기판 처리 장치에 관한 것이다. The present invention relates to a lift pin assembly and a substrate processing apparatus having the same.
일반적으로 반도체 소자는 기판에 다수의 공정들을 반복적으로 실시하여 제조된다. 예를 들자면 기판 상에 절연막이나 도전체막 등의 물질막을 증착하는 공정, 증착된 물질막을 소자 형성을 위하여 필요한 형태로 패터닝하는 공정 그리고 전 공정을 거치면서 기판 상에 형성된 잔류물을 제거하는 공정 그리고 기판이나 물질막내에 소정의 불순물을 주입하는 공정이 있다.In general, a semiconductor device is manufactured by repeatedly performing a plurality of processes on a substrate. For example, a process of depositing a material film such as an insulating film or a conductive film on a substrate, a process of patterning the deposited material film into a shape required for device formation, a process of removing residues formed on the substrate during the entire process, and a substrate Alternatively, there is a process of implanting a predetermined impurity into the material film.
이러한 공정들을 진행하기 위해서는 각각의 공정을 수행하는 공정 챔버 내부에 설치된 기판 서셉터로 기판을 로딩하여 필요한 공정을 수행하고, 공정이 완료되면 이 기판을 외부로 언로딩하여 다음 공정을 위하여 이동시키는 과정을 필요에 따라 반복하게 된다.In order to proceed with these processes, a process is performed by loading a substrate into a substrate susceptor installed inside a process chamber performing each process, performing a necessary process, and when the process is completed, unloading the substrate to the outside and moving it for the next process is repeated as needed.
반도체 소자 제조를 원활하게 진행하기 위해서는 공정이 수행되는 기판이 손상되지 않도록 하는 것이 중요하다. 이를 위하여 각각의 공정 챔버에는 기판을 안정적으로 기판 서셉터에 안착시켜야 하는데, 이를 위하여 기판 서셉터 상으로 기판을 이송하는 로봇암과 기판을 기판 서셉터 상에 안착시키는 리프트 핀 어셈블리가 사용된다. In order to smoothly proceed with semiconductor device manufacturing, it is important not to damage the substrate on which the process is performed. To this end, each process chamber must stably seat the substrate on the substrate susceptor. For this purpose, a robot arm for transferring the substrate onto the substrate susceptor and a lift pin assembly for mounting the substrate on the substrate susceptor are used.
이러한 기판 처리 장치는 기판의 온도 상승을 위해 고온의 서셉터가 사용되게 되는데, 특정 막질이 증착된 기판의 경우 급격한 온도 상승 및 고온 공정에서 문제가 발생할 수 있다. 이와 같은 문제로 인해 막질의 변형 및 탈착 등의 문제를 발생시킨다. In such a substrate processing apparatus, a high-temperature susceptor is used to increase the temperature of the substrate. In the case of a substrate on which a specific film quality is deposited, a problem may occur in a rapid temperature increase and a high-temperature process. Such problems cause problems such as deformation and detachment of the film quality.
특히, 반도체 소자 집적화 및 막질의 성분 변화로 인해 더욱 미세한 온도 컨트롤을 필요로 한느 기판들이 만들어 지고 있으므로, 기판 처리에 있어서 급격한 온도 변화는 개선해야 될 문제점이다.In particular, since substrates requiring finer temperature control are being made due to semiconductor device integration and changes in film quality, abrupt temperature changes in substrate processing is a problem that needs to be improved.
본 발명은 리프트 핀의 정밀한 장착이 가능한 리프트 핀 어셈블리 및 그것을 구비한 기판 처리 장치를 제공하는데 있다.An object of the present invention is to provide a lift pin assembly capable of precisely mounting a lift pin and a substrate processing apparatus having the same.
본 발명은 리프트 핀의 기울어짐을 방지할 수 있는 리프트 핀 어셈블리 및 그것을 구비한 기판 처리 장치를 제공하는데 있다.An object of the present invention is to provide a lift pin assembly capable of preventing inclination of the lift pin and a substrate processing apparatus having the same.
본 발명의 목적은 여기에 제한되지 않으며, 언급되지 않은 또 다른 목적들은 아래의 기재로부터 당업자에게 명확하게 이해될 수 있을 것이다.The object of the present invention is not limited thereto, and other objects not mentioned will be clearly understood by those skilled in the art from the following description.
본 발명의 일 측면에 따르면, 구동 부재; 상기 구동 부재에 의해 수직방향으로 승/하강하는 수평대; 리프트 핀들이 설치되며, 상기 수평대의 승/하강에 따라 수직방향으로 이동하는 적어도 하나의 핀 지지부재; 및 상기 핀 지지부재의 이동을 안내하는 가이드부재를 포함하되; 상기 핀 지지부재는 상기 리프트 핌들이 설치되는 리프트 후프; 상기 리프트 후프를 지지하는 샤프트; 상기 샤프트를 감싸도록 제공되는 벨로우즈; 및 상기 샤프트와 상기 벨로우즈 사이의 유격 방지를 위해 상기 샤프트 외주면에 제공되는 샤프트링을 포함하는 리프트 핀 어셈블리가 제공될 수 있다. According to one aspect of the present invention, a driving member; a horizontal bar elevating/lowering in the vertical direction by the driving member; at least one pin support member having lift pins installed and moving in a vertical direction according to the rising/lowering of the horizontal bar; and a guide member for guiding the movement of the pin support member; The pin support member may include: a lift hoop on which the lift pims are installed; a shaft supporting the lift hoop; a bellows provided to surround the shaft; and a shaft ring provided on an outer circumferential surface of the shaft to prevent play between the shaft and the bellows may be provided.
또한, 상기 밸로우즈는 챔버 하단에 연결되는 상부 플랜지; 상단은 상기 상부 플랜지에 고정되고, 하단은 상기 샤프트가 고정되는 브라켓에 고정되는 주름관을 포함하며, 상기 샤프트링은 상기 상부 플랜지와 동일선상에 위치되도록 상기 샤프트에 설치될 수 있다.In addition, the bellows may include an upper flange connected to the lower end of the chamber; An upper end is fixed to the upper flange, and a lower end includes a corrugated pipe fixed to a bracket to which the shaft is fixed, and the shaft ring may be installed on the shaft so as to be positioned on the same line with the upper flange.
또한, 상기 리프트 핀은 상기 리프트 후프에 체결되는 체결부를 갖는 하단부분과, 기판과 접촉하는 접촉부를 갖는 상단부분을 가지며, 상기 상단부분은 평탄한 평탄면을 가질 수 있다.In addition, the lift pin may have a lower end portion having a fastening portion fastened to the lift hoop and an upper portion portion having a contact portion in contact with the substrate, and the upper portion may have a flat flat surface.
또한, 상기 하단부분은 나사산이 형성된 나사부와 나사부 상부에 제공되는 받침부; 및 상기 나사부와 상기 받침부 사이에 높이조절용 와셔가 삽입되는 삽입홈을 가질 수 있다.In addition, the lower portion includes a threaded portion and a support portion provided on the screw portion; and an insertion groove into which a washer for height adjustment is inserted between the screw part and the support part.
또한, 상기 나사부는 나사산이 형성된 외주면을 길이방향으로 절단한 절단면이 형성되도록 하되, 상기 절단면은 좌, 우 대칭이 되도록 제공될 수 있다.In addition, the screw portion so that a cut surface is formed by cutting the outer circumferential surface on which the thread is formed in the longitudinal direction, the cut surface may be provided so as to be left and right symmetrical.
또한, 상기 높이조절용 와셔는 상기 나사부의 평단면 형상과 대응되는 관통공을 가질 수 있다.In addition, the washer for adjusting the height may have a through hole corresponding to the flat cross-sectional shape of the screw portion.
또한, 상기 리프트 후프는 상기 리프트 핀들이 장착되는 체결홀들을 갖는 링 형상의 링부분; 및 상기 샤프트에 지지되는 지지부분을 갖고, 상기 지지부분과 상기 링부분 사이에는 오목하게 형성된 오목부분을 가질 수 있다.In addition, the lift hoop may include a ring-shaped ring portion having fastening holes to which the lift pins are mounted; and a support portion supported by the shaft, and may have a concave portion concavely formed between the support portion and the ring portion.
본 발명의 다른 측면에 따르면, 공정 챔버; 상기 공정 챔버 내부에 서로 이격되어 설치되고, 복수개의 핀 홀을 갖는 제1,2서셉터; 상기 제1서셉터의 핀 홀들과 각각 대응하는 복수개의 리프트 핀들을 갖는 제1 핀 지지부재; 상기 제2서셉터의 핀 홀들과 각각 대응하는 복수개의 리프트 핀들을 갖는 제2 핀 지지부재; 및 상기 제1,2핀 지지부재를 수직 방향으로 상승 또는 하강시키는 구동 부재를 포함하되; 상기 제1핀 지지부재 및 상기 제2핀 지지부재 각각은 상기 리프트 핀들이 설치되는 리프트 후프; 상기 리프트 후프를 지지하는 샤프트; 상기 샤프트를 감싸도록 제공되는 벨로우즈; 및 상기 샤프트와 상기 벨로우즈 사이의 유격 방지를 위해 상기 샤프트 외주면에 제공되는 샤프트링을 포함하는 기판 처리 장치가 제공될 수 있다.According to another aspect of the present invention, a process chamber; first and second susceptors installed spaced apart from each other in the process chamber and having a plurality of pin holes; a first pin support member having a plurality of lift pins respectively corresponding to the pin holes of the first susceptor; a second pin support member having a plurality of lift pins respectively corresponding to the pin holes of the second susceptor; and a driving member for vertically raising or lowering the first and second pin support members; Each of the first pin support member and the second pin support member includes: a lift hoop on which the lift pins are installed; a shaft supporting the lift hoop; a bellows provided to surround the shaft; and a shaft ring provided on an outer circumferential surface of the shaft to prevent play between the shaft and the bellows.
또한, 상기 밸로우즈는 챔버 하단에 연결되는 상부 플랜지; 상단은 상기 상부 플랜지에 고정되고, 하단은 상기 샤프트가 고정되는 브라켓에 고정되는 주름관을 포함하며, 상기 샤프트링은 상기 상부 플랜지와 동일선상에 위치되도록 상기 샤프트에 설치될 수 있다.In addition, the bellows may include an upper flange connected to the lower end of the chamber; An upper end is fixed to the upper flange, and a lower end includes a corrugated pipe fixed to a bracket to which the shaft is fixed, and the shaft ring may be installed on the shaft so as to be positioned on the same line with the upper flange.
또한, 상기 리프트 핀은 상기 리프트 후프에 체결되는 체결부를 갖는 하단부분과, 기판과 접촉하는 접촉부를 갖는 상단부분을 가지며, 상기 상단부분은 평탄한 평탄면을 가질 수 있다.In addition, the lift pin may have a lower end portion having a fastening portion fastened to the lift hoop and an upper portion portion having a contact portion in contact with the substrate, and the upper portion may have a flat flat surface.
또한, 상기 하단부분은 나사산이 형성된 나사부와 나사부 상부에 제공되는 받침부; 및 상기 나사부와 상기 받침부 사이에 높이조절용 와셔가 삽입되는 삽입홈을 가질 수 있다.In addition, the lower portion includes a threaded portion and a support portion provided on the screw portion; and an insertion groove into which a washer for height adjustment is inserted between the screw part and the support part.
또한, 상기 나사부는 나사산이 형성된 외주면을 길이방향으로 절단한 절단면이 형성되도록 하되, 상기 절단면은 좌, 우 대칭이 되도록 제공될 수 있다.In addition, the screw portion so that a cut surface is formed by cutting the outer circumferential surface on which the thread is formed in the longitudinal direction, the cut surface may be provided so as to be left and right symmetrical.
또한, 상기 높이조절용 와셔는 상기 나사부의 평단면 형상과 대응되는 관통공을 가질 수 있다.In addition, the washer for adjusting the height may have a through hole corresponding to the flat cross-sectional shape of the screw portion.
또한, 상기 리프트 후프는 상기 리프트 핀들이 장착되는 체결홀들을 갖는 링 형상의 링부분; 및 상기 샤프트에 지지되는 지지부분을 갖고, 상기 지지부분과 상기 링부분 사이에는 오목하게 형성된 오목부분을 가질 수 있다.In addition, the lift hoop may include a ring-shaped ring portion having fastening holes to which the lift pins are mounted; and a support portion supported by the shaft, and may have a concave portion concavely formed between the support portion and the ring portion.
또한, 상기 제1,2서셉터의 상면으로부터 상기 핀홀에 끼워지는 그리고 상기 리프트 핀이 상기 리프트 후프의 체결홀에 체결되는 과정에서 상기 리프트 핀의 수직도를 잡아주는 쳐짐방지 지그를 더 포함할 수 있다.In addition, it may further include a sagging prevention jig fitted into the pinhole from the upper surface of the first and second susceptors and holding the verticality of the lift pin while the lift pin is fastened to the fastening hole of the lift hoop. have.
또한, 상기 쳐짐방지 지그는 상기 리프트 핀이 삽입되는 관통공을 가질 수 있다.In addition, the anti-sag jig may have a through hole into which the lift pin is inserted.
또한, 상기 리프트 핀은 상기 제1,2서셉터의 상면으로부터 상기 핀홀을 통해 상기 리프트 후프의 체결홀에 체결될 수 있다.In addition, the lift pins may be fastened from upper surfaces of the first and second susceptors to the fastening holes of the lift hoops through the pinholes.
또한, 상기 리프트 핀 어셈블리는 상기 제1,2핀 지지부재의 상기 브라켓과 상기 수평대 사이에 설치되어 상기 제1,2가이드부재에 의해 이동하는 상기 제1,2핀 지지부재의 이동방향과, 상기 수평대의 이동방향 간의 각도 차이를 허용하기 위한 플로팅 조인트를 더 포함할 수 있다.In addition, the lift pin assembly is installed between the bracket of the first and second pin support members and the horizontal bar, and the movement direction of the first and second pin support members moved by the first and second guide members; It may further include a floating joint for allowing an angular difference between the moving directions of the horizontal bar.
또한, 상기 공정 챔버는 상기 제1서셉터가 위치되는 제1공간과, 상기 제2서셉터가 위치되는 제2공간 그리고 상기 제1공간과 제2공간이 동등한 구조를 갖도록 상기 공정 챔버 내부를 구획하는 구획벽을 더 포함할 수 있다.In addition, the process chamber divides the inside of the process chamber so that a first space in which the first susceptor is positioned, a second space in which the second susceptor is positioned, and the first space and the second space have the same structure. It may further include a partition wall.
또한, 상기 기판 처리 장치는 상기 공정 챔버의 제1 공간의 상부에 설치되며, 상기 제1공간으로 플라즈마(plasma)와 공정가스를 공급하는 분사하는 제1공급부재와, 상기 공정 챔버의 제2 공간의 상부에 설치되며, 상기 제2공간으로 플라즈마(plasma)와 공정가스를 공급하는 분사하는 제2공급부재를 더 포함할 수 있다.In addition, the substrate processing apparatus is installed in an upper portion of the first space of the process chamber, and a first supply member for supplying plasma and a process gas to the first space, and a second space of the process chamber. It may further include a second supply member installed on the upper portion of the injection device for supplying plasma and process gas to the second space.
본 발명의 일 실시 예에 의하면 리프트 핀의 기울어짐 방지 및 기판과의 간격 제어가 가능하여 기판의 급격한 가열, 고온으로 인한 문제를 개선할 수 있다.According to an embodiment of the present invention, it is possible to prevent inclination of the lift pin and control the distance from the substrate, so that problems caused by rapid heating and high temperature of the substrate can be improved.
본 발명의 일 실시예에 의하면, 리프트 핀의 정밀한 장착이 가능함으로써 기판의 온도 조절이 용이하다. According to an embodiment of the present invention, it is easy to control the temperature of the substrate because the precise mounting of the lift pin is possible.
본 발명의 효과가 상술한 효과들로 한정되는 것은 아니며, 언급되지 않은 효과들은 본 명세서 및 첨부된 도면으로부터 본 발명이 속하는 기술분야에서 통상의 지식을 가진 자에게 명확히 이해될 수 있을 것이다.Effects of the present invention are not limited to the above-described effects, and effects not mentioned will be clearly understood by those of ordinary skill in the art to which the present invention pertains from the present specification and accompanying drawings.
도 1은 본 발명의 바람직한 실시예에 따른 기판 처리 장치의 외관도이다.1 is an external view of a substrate processing apparatus according to a preferred embodiment of the present invention.
도 2는 본 발명의 바람직한 실시예에 따른 기판 처리 장치의 정단면도이다.2 is a front cross-sectional view of a substrate processing apparatus according to a preferred embodiment of the present invention.
도 3은 본 발명의 바람직한 실시예에 따른 기판 처리 장치에서 공정 챔버 내부를 보여주는 평면도이다.3 is a plan view showing the inside of a process chamber in a substrate processing apparatus according to an exemplary embodiment of the present invention.
도 4는 본 발명의 바람직한 실시예에 따른 기판 처리 장치에서 공정 챔버 내부에 위치하는 리프트 핀 어셈블리의 제1,2핀 지지부재를 보여주는 평면도이다.4 is a plan view illustrating first and second pin support members of a lift pin assembly positioned inside a process chamber in a substrate processing apparatus according to an exemplary embodiment of the present invention.
도 5는 리프트 핀 어셈블리의 분해 사시도이다. 5 is an exploded perspective view of the lift pin assembly;
도 6은 리프트 핀 어셈블리의 정면도이다.6 is a front view of the lift pin assembly;
도 7은 리프트 핀을 보여주는 도면이다.7 is a view showing a lift pin.
도 8은 리프트 핀의 하단부분을 보여주는 도면이다.8 is a view showing a lower portion of a lift pin.
도 9는 리프트 핀에 와셔가 장착된 상태를 설명하기 위한 도면이다.9 is a view for explaining a state in which a washer is mounted on a lift pin.
도 10은 리프트 핀이 장착된 상태를 보여주는 요부 단면도이다. .10 is a cross-sectional view of a main part showing a state in which a lift pin is mounted. .
도 11은 리프트 후프를 보여주는 도면이다.11 is a view showing a lift hoop.
도 12는 벨로우즈는 보여주는 단면도이다.12 is a cross-sectional view showing the bellows.
이하, 본 발명의 실시 예를 첨부된 도면들을 참조하여 더욱 상세하게 설명한다. 본 발명의 실시 예는 여러 가지 형태로 변형할 수 있으며, 본 발명의 범위가 아래의 실시 예들로 한정되는 것으로 해석되어서는 안 된다. 본 실시 예는 당업계에서 평균적인 지식을 가진 자에게 본 발명을 더욱 완전하게 설명하기 위해 제공되는 것이다. 따라서 도면에서의 요소의 형상은 보다 명확한 설명을 강조하기 위해 과장되었다.Hereinafter, embodiments of the present invention will be described in more detail with reference to the accompanying drawings. Embodiments of the present invention may be modified in various forms, and the scope of the present invention should not be construed as being limited to the following embodiments. This embodiment is provided to more completely explain the present invention to those of ordinary skill in the art. Accordingly, the shapes of elements in the drawings are exaggerated to emphasize a clearer description.
본 실시 예에서는 플라즈마를 이용하여 사진 공정 후 기판상에 남아 있는 불필요한 감광제를 제거하는 플라즈마 애싱 장치를 예로 들어 설명한다. 그러나 본 발명의 기술적 사상은 이에 한정되지 않으며, 플라즈마를 이용하여 반도체 기판을 처리하는 다른 종류의 장치 또는 공정 가스를 이용하여 반도체 기판을 처리하는 다른 종류의 장치에도 적용될 수 있다. In this embodiment, a plasma ashing apparatus for removing unnecessary photosensitizers remaining on a substrate after a photolithography process using plasma will be described as an example. However, the technical spirit of the present invention is not limited thereto, and may be applied to other types of apparatuses for processing semiconductor substrates using plasma or other types of apparatuses for processing semiconductor substrates using process gases.
또한, 본 실시 예에서는 플라즈마를 생성시키기 위한 에너지원으로 마이크로파를 예로 들어 설명하지만, 이외에도 고주파 전원 등 다양한 에너지원이 사용될 수 있다. In addition, although microwaves are used as an example as an energy source for generating plasma in this embodiment, various energy sources such as high-frequency power sources may be used in addition to this.
도 1 내지 도 5를 참조하면, 본 발명의 실시예에 따른 기판 처리 장치(100)는 플라즈마 소스부에서 생성되는 라디칼을 이용하여 반도체 소자 제조용 기판(이하 기판이라고 함)의 표면을 에싱하기 위한 반도체 제조 장치이다. 1 to 5 , in the substrate processing apparatus 100 according to the embodiment of the present invention, a semiconductor for ashing the surface of a substrate for manufacturing a semiconductor device (hereinafter referred to as a substrate) using radicals generated from a plasma source unit. manufacturing device.
도 1 내지 도 4를 참조하면, 기판 처리 장치(10)는, 소정의 밀폐된 분위기를 제공하는 공정 챔버(process chamber, 100), 제1,2서셉터(110a,110b), 배기부재(150), 구획부재(160), 플라즈마 생성부재(140), 제1,2가스분배플레이트(170a,170b)를 갖는 가스공급부재(130) 그리고 리프트 핀 어셈블리(200)를 포함한다. 1 to 4 , the substrate processing apparatus 10 includes a process chamber 100 providing a predetermined sealed atmosphere, first and second susceptors 110a and 110b, and an exhaust member 150 . ), a partition member 160 , a plasma generating member 140 , a gas supply member 130 having first and second gas distribution plates 170a and 170b , and a lift pin assembly 200 .
공정 챔버(100)는 내부에 애싱 공정(ashing process)을 수행하는 프로세스 공간을 제공한다. 공정 챔버(100)는 두 개의 기판을 동시에 처리할 수 있는 구조를 갖는다. 즉, 공정 챔버(100)의 프로세스 공간은 제1공간(a)과 제2공간(b)으로 구획된다. 제1공간(a)과 제2공간(b) 각각은 공정시 수용된 낱장의 기판상에 애싱 공정이 수행되는 공간이다. 공정 챔버(100)의 일측벽에는 제1공간(a)과 제2공간(b)으로 각각 기판 출입이 이루어지는 기판 출입구(102)가 형성된다. 기판 출입구(102)는 게이트 밸브와 같은 개폐도어(104)에 의해 개폐된다. The process chamber 100 provides a process space for performing an ashing process therein. The process chamber 100 has a structure capable of simultaneously processing two substrates. That is, the process space of the process chamber 100 is divided into a first space (a) and a second space (b). Each of the first space (a) and the second space (b) is a space in which the ashing process is performed on the sheet of substrate accommodated during the process. On one wall of the process chamber 100 , a substrate entrance 102 is formed through which substrates enter and exit the first space (a) and the second space (b), respectively. The substrate entrance 102 is opened and closed by an opening/closing door 104 such as a gate valve.
도 2 및 도 3을 참조하면, 공정 챔버(100)의 하부벽(저면)에는 공정 챔버(100) 내 가스가 배기되는 중앙배기구(116)와 사이드 배기구(117)가 제공된다. 중앙 배기구(116)는 제1공간(a)과 제2공간(b) 사이에 위치되어 제1,2공간(a,b)내의 가스 배기가 이루어지고, 사이드 배기구(117)는 서셉터(110a,110b)를 중심으로 중앙 배기구(116)와 대칭되는 제1,2공간(a,b)에 각각 하나씩 위치된다. 본 실시예에서는 두 개의 공간(a,b)을 가지는 공정 챔버(110)를 예로 들어 설명하였으나, 공정 챔버(100) 내 구획 공간은 세 개 이상일 수도 있다.2 and 3 , a central exhaust port 116 and a side exhaust port 117 through which gas in the process chamber 100 are exhausted are provided on the lower wall (bottom surface) of the process chamber 100 . The central exhaust port 116 is located between the first space (a) and the second space (b) to exhaust gas in the first and second spaces (a, b), and the side exhaust port 117 is the susceptor 110a , 110b) is positioned one at a time in the first and second spaces (a, b) symmetrical to the central exhaust port 116, respectively. In the present embodiment, the process chamber 110 having two spaces (a, b) has been described as an example, but the number of partition spaces in the process chamber 100 may be three or more.
상기 공정 챔버(100)의 제1공간(a)과 제2공간(b)에는 공정시 기판을 지지하는 제1,2서셉터(110a,110b)가 각각 설치된다. 제1,2서셉터(110a,110b)로는 정전척(electrode chuck)이 사용될 수 있다. 또한, 제1,2서셉터(110a,110b)는 공정시 기판(W)을 안착시켜 기설정된 공정온도로 가열한다. 제1,2서셉터(110a,110b)는 기판(w)상의 포토레지스터가 제거될 수 있는 적정온도(200-400℃)로 유지된다. 제1,2서셉터(110a,110b)는 리프트 핀들이 위치하는 핀 홀(112)들을 갖는다. 제1,2서셉터(110a,110b)에는 전력인가기(미도시됨)가 연결된다. 전력인가기는 제1,2서셉터(110a,110b)에 기설정된 바이어스 전력을 인가한다.In the first space (a) and the second space (b) of the process chamber 100 , first and second susceptors 110a and 110b for supporting the substrate during the process are respectively installed. Electrode chucks may be used as the first and second susceptors 110a and 110b. In addition, the first and second susceptors 110a and 110b seat the substrate W during the process and heat it to a preset process temperature. The first and second susceptors 110a and 110b are maintained at an appropriate temperature (200-400° C.) at which the photoresist on the substrate w can be removed. The first and second susceptors 110a and 110b have pin holes 112 in which lift pins are located. A power applying device (not shown) is connected to the first and second susceptors 110a and 110b. The power applicator applies preset bias power to the first and second susceptors 110a and 110b.
배기부재(150)는 공정 챔버(100)의 내부를 진공 상태로 형성하고, 에싱 공정이 수행되는 동안 발생하는 반응 부산물 등을 배출시키기 위한 것이다. The exhaust member 150 is for forming the inside of the process chamber 100 in a vacuum state, and for discharging reaction by-products generated while the ashing process is performed.
배기부재(150)는 중앙 배기관(152), 사이드 배기관(154), 그리고 감압부재(미도시됨)를 포함한다. 중앙 배기관(152)은 공정 챔버(110) 내부 가스를 외부로 배기시킨다. 중앙 배기관(152)은 제1 및 제2 공간(a, b) 내 가스를 모두 배기하도록 공정 챔버(100)의 중앙 배기구(116)와 연결된다. 사이드 배기관(154)은 사이드 배기구(117)와 각각 연결되며, 다시 사이드 배기관(154)은 중앙 배기관(152)과 연결된다. 감압부재(미도시됨)는 중앙 배기관(154)에 설치된다. 감압부재는 공정 챔버(100) 내부 압력을 감압하도록 제1 및 제2 공간(a, b) 내 가스를 강제로 흡입한다. 감압부재로는 진공펌프(vacuum pump)가 사용될 수 있다.The exhaust member 150 includes a central exhaust pipe 152 , a side exhaust pipe 154 , and a pressure reducing member (not shown). The central exhaust pipe 152 exhausts the gas inside the process chamber 110 to the outside. The central exhaust pipe 152 is connected to the central exhaust port 116 of the process chamber 100 to exhaust both gases in the first and second spaces a and b. The side exhaust pipe 154 is respectively connected to the side exhaust pipe 117 , and the side exhaust pipe 154 is again connected to the central exhaust pipe 152 . A pressure reducing member (not shown) is installed in the central exhaust pipe 154 . The pressure reducing member forcibly sucks in gas in the first and second spaces a and b to reduce the internal pressure of the process chamber 100 . A vacuum pump may be used as the pressure reducing member.
구획부재(160)는 제1 공간(a) 및 제2 공간(b)이 동등한 구조를 갖도록 공정 챔버(110) 내부를 구획하는 구획벽(162)을 포함한다. 구획벽(162)은 공정 챔버(110) 내부 중앙에서 상하로 수직하게 설치된다. 이때, 구획벽(162)은 제1 공간(a) 및 제2 공간(b) 각각이 좌우 대칭되도록 공정 챔버(110) 내부를 구획한다. 구획부재(160)는 제1 공간(a) 및 제2 공간(b)의 분리 배기를 위해 제공된다. 또한, 구획부재(160)는 제1공간(a)의 제1서셉터(110a)에 인가되는 전력과 제2공간(b)의 제2서셉터(110b)에 인가되는 전력이 서로 영향을 받지 않도록 제1 공간(a) 및 제2 공간(b)을 구획한다. 따라서, 구획부재(160)의 재질은 절연체인 것이 바람직하다.The partition member 160 includes a partition wall 162 that partitions the inside of the process chamber 110 so that the first space (a) and the second space (b) have the same structure. The partition wall 162 is vertically installed in the center inside the process chamber 110 . At this time, the partition wall 162 partitions the inside of the process chamber 110 so that each of the first space (a) and the second space (b) is symmetrical. The partition member 160 is provided for separate exhaust of the first space (a) and the second space (b). In addition, in the partition member 160, the power applied to the first susceptor 110a of the first space (a) and the power applied to the second susceptor 110b of the second space (b) are not affected by each other. The first space (a) and the second space (b) are partitioned so as not to be separated. Therefore, the material of the partition member 160 is preferably an insulator.
본 실시예에서는 구획부재(160)가 일체형의 구획벽(162)을 구비하여 공정챔버(100)를 구획하는 것을 예로 들어 설명하였으나, 구획부재의 구조 및 형상, 그리고 설치 방식은 다양하게 변경 및 변형될 수 있다. 예컨대, 구획부재(160)는 구획벽(162)이 서로 분리 가능한 구조로 이루어질 수 있으며, 구획벽(162)은 복수개로 이루어질 수 있다. 또는, 구획부재(160)의 구획벽(162)은 공정 챔버(110)에 고정 설치될 수 있다. In this embodiment, the partition member 160 is provided with the integral partition wall 162 to partition the process chamber 100 as an example, but the structure and shape of the partition member and the installation method are variously changed and modified. can be For example, the partition member 160 may have a structure in which the partition walls 162 are separable from each other, and the partition walls 162 may be formed in plurality. Alternatively, the partition wall 162 of the partition member 160 may be fixedly installed in the process chamber 110 .
플라즈마 생성부재(140)는 공정시 플라즈마를 발생시켜 공정 챔버(100)로 공급한다. 플라즈마 생성부재(140)로는 원격 플라즈마 발생장치(remote plasma generating apparatus)가 사용된다. 플라즈마 생성부재(140)는 제1 생성부재(142) 및 제2 생성부재(144)를 포함한다. 제1 생성부재(142)는 공정시 제1 공급부재(132)로 플라즈마를 공급하고, 제2 생성부재(144)는 공정시 제2 공급부재(134)로 플라즈마를 공급한다. 제1 및 제2 생성부재(142, 144) 각각은 마그네트론(magnetron)(142a, 144a), 도파관(wave guide line)(142b, 144b), 그리고 가스 공급관(gas supply line)(142c, 144c)을 포함한다. 마그네트론(142a, 144a)은 공정시 플라즈마 생성을 위한 마이크로파(micro wave)를 발생시킨다. 도파관(142b)은 마그네트론(142a)에서 생성된 마이크로파를 가스 공급관(142c)으로 유도하고, 도파관(144b)은 마그네트론(144a)에서 생성된 마이크로파를 각각의 가스 공급관(144c)으로 유도한다. 가스 공급관(142c, 144c)은 공정시 반응 가스를 공급한다. 이때, 마그네트론(142a, 144b)에서 생성된 마이크로파에 의해 가스 공급관(142c, 144c)을 통해 공급받은 반응가스로부터 플라즈마가 발생된다. 플라즈마 생성부재(140)에서 생성된 플라즈마는 애싱 공정시 가스공급부재(130)로 공급된다. The plasma generating member 140 generates plasma during a process and supplies it to the process chamber 100 . A remote plasma generating apparatus is used as the plasma generating member 140 . The plasma generating member 140 includes a first generating member 142 and a second generating member 144 . The first generating member 142 supplies plasma to the first supplying member 132 during the process, and the second generating member 144 supplies plasma to the second supplying member 134 during the process. Each of the first and second generating members 142 and 144 includes magnetrons 142a and 144a, wave guide lines 142b and 144b, and gas supply lines 142c and 144c. include The magnetrons 142a and 144a generate microwaves for plasma generation during processing. The waveguide 142b guides the microwave generated by the magnetron 142a to the gas supply pipe 142c, and the waveguide 144b guides the microwave generated by the magnetron 144a to each gas supply pipe 144c. The gas supply pipes 142c and 144c supply reaction gases during the process. At this time, plasma is generated from the reaction gas supplied through the gas supply pipes 142c and 144c by the microwaves generated by the magnetrons 142a and 144b. The plasma generated by the plasma generating member 140 is supplied to the gas supply member 130 during the ashing process.
가스공급부재(130)의 제1공급부재(132)와 제2공급부재(134)는 공정시 공정 챔버(110)의 제1 공간(a)과 제2 공간(b)으로 플라즈마(plasma)와 공정가스를 분사한다. 제1 공급부재(132)는 공정 챔버(100)의 제1 공간(a) 상부에 설치되며, 제1 생성부재(142)와 연결되는 깔때기 형상의 유로를 제공하는 덮개(136a)와, 덮개(136a) 하부에 기판(w)에 대향되게 설치되는 제1가스 분배 플레이트(Gas Distribution Plate, GDP;170a)를 갖는다. 제2 공급부재(134)는 공정 챔버(100)의 제2 공간(b) 상부에 설치되며, 제2 생성부재(144)와 연결되는 깔때기 형상의 유로를 제공하는 덮개(136b)와, 덮개(136b) 하부에 기판(w)에 대향되게 설치되는 제1,2 가스 분배 플레이트(Gas Distribution Plate;170a,170b)를 갖는다. The first supplying member 132 and the second supplying member 134 of the gas supplying member 130 enter the first space (a) and the second space (b) of the process chamber 110 during the process of plasma and The process gas is sprayed. The first supply member 132 is installed in the upper portion of the first space a of the process chamber 100 , and includes a cover 136a providing a funnel-shaped flow path connected to the first generating member 142 , and the cover ( 136a) has a first gas distribution plate (Gas Distribution Plate, GDP; 170a) installed to face the substrate (w) in the lower portion. The second supply member 134 is installed in the upper portion of the second space b of the process chamber 100 , and includes a cover 136b providing a funnel-shaped flow path connected to the second generating member 144 , and the cover ( 136b) has first and second gas distribution plates 170a and 170b installed to face the substrate w at the lower portion.
제1 공급부재(132)는 공정시 제1 공간(a)의 제1서셉터(110a)에 안착된 기판(W)을 향해 플라즈마와 공정가스를 분사하고, 제2 공급부재(134)는 공정시 제2 공간(b)의 제2서셉터(110a,110b)에 안착된 기판(W)을 향해 플라즈마와 공정가스를 분사한다. The first supply member 132 injects plasma and a process gas toward the substrate W seated on the first susceptor 110a of the first space (a) during the process, and the second supply member 134 is used for the process Plasma and process gas are sprayed toward the substrate W seated on the second susceptors 110a and 110b of the second space b.
특히, 제1 및 제2 가스 분배 플레이트(170a,170b)는 제1 및 제2 공간(a, b)으로 제공되는 공정가스 및 플라즈마의 밀도가 균일하게 형성되도록 비대칭으로 형성되는 다수의 가스분사유로(172a,172b)들을 가질 수 있다. 구체적으로, 제1 및 제2 가스 분배 플레이트(170a,170b)는 동일한 크기의 가스분사유로(172a)들이 형성된 제1 가장자리 부분과, 기판 출입구(112)와 인접하고 제1 가장자리 부분에 형성된 가스분사유로(172a)들보다는 상대적으로 큰 가스분사유로(172b)들이 형성된 제2 가장자리 부분으로 구분될 수 있는 비대칭의 가스분사유로(172a,172b)들을 갖는다. In particular, the first and second gas distribution plates 170a and 170b have a plurality of gas distribution passages that are asymmetrically formed so that the densities of the process gas and plasma provided to the first and second spaces a and b are uniformly formed. (172a, 172b). Specifically, the first and second gas distribution plates 170a and 170b have a first edge portion in which gas injection passages 172a of the same size are formed, and a gas injection portion adjacent to the substrate entrance 112 and formed in the first edge portion. It has asymmetrical gas injection passages 172a and 172b that can be divided by a second edge portion in which the gas injection passages 172b, which are relatively larger than the passages 172a, are formed.
도 5는 리프트 핀 어셈블리의 분해 사시도이고, 도 6은 리프트 핀 어셈블리의 정면도이다.5 is an exploded perspective view of the lift pin assembly, and FIG. 6 is a front view of the lift pin assembly.
도 5, 도 6 그리고 도 2를 참조하면, 리프트 핀 어셈블리(200)는 제1서셉터(110a)와 제2서셉터(110b)로부터 기판을 안정적으로 승/하강시키기 위한 구성을 갖는다. 5, 6, and 2, the lift pin assembly 200 has a configuration for stably raising/lowering the substrate from the first susceptor 110a and the second susceptor 110b.
리프트 핀 어셈블리(200)는 구동부재(210), 수평대(220), 제1,2핀 지지부재(230a,230b). 제1,2가이드부재(240a,240b) 그리고 플로팅 조인트(250)를 포함한다. 본 발명의 리프트 핀 어셈블리(200)는 구동부재 하나로 2개의 서셉터로부터 기판을 업/다운할 수 있는 장치이다.The lift pin assembly 200 includes a driving member 210 , a horizontal bar 220 , and first and second pin support members 230a and 230b. It includes first and second guide members 240a and 240b and a floating joint 250 . The lift pin assembly 200 of the present invention is a device capable of lifting a substrate up/down from two susceptors with one driving member.
구동부재(210)는 공정 챔버(100)의 외측 저면에 설치된다. 구동 부재(210)는 리니어 모터(linear motor) 또는 실린더 등과 같은 액츄에이터가 사용될 수 있다. 수평대(220)는 구동 부재(210)와 연결되어, 구동 부재(210)에 의해 수직 방향으로 승/하강한다. 수평대(220)는 기다란 막대 형상으로 이루어진다. 수평대(220)의 양단에는 제1핀 지지부재(230a)와 제2핀 지지부재(230b)가 각각 설치된다. 제1,2핀 지지부재(230a,230b)는 플로팅 조인트(250)에 의해 수평대(220)에 연결 지지된다. The driving member 210 is installed on the outer bottom surface of the process chamber 100 . The driving member 210 may be an actuator such as a linear motor or a cylinder. The horizontal bar 220 is connected to the driving member 210 and ascends/decreases in the vertical direction by the driving member 210 . The horizontal bar 220 is made in the shape of an elongated bar. A first pin support member 230a and a second pin support member 230b are installed at both ends of the horizontal stand 220 , respectively. The first and second pin support members 230a and 230b are connected and supported to the horizontal stand 220 by the floating joint 250 .
제1핀 지지부재(230a)는 제1서셉터(110a)에서의 기판 로딩/언로딩을 담당하며, 제2핀 지지부재(230b)는 제2서셉터(110b)에서의 기판 로딩/언로딩을 담당한다. 제1,2핀 지지부재(230a,230b)는 핀 홀(112)들에 위치되는 3개의 리프트 핀(260)들이 수직하게 설치되는 리프트 후프(270)와, 리프트 후프(270)를 지지하며 공정 챔버(100)의 외측 저면으로 관통하여 설치되는 샤프트(236), 샤프트(236) 하단에 설치되는 벨로우즈(280) 그리고 샤프트(236)가 고정되는 브라켓(239)을 포함한다. 브라켓(239)은 저면에 플로팅 조인트(250)가 연결되며 일측면은 제1,2가이드 부재(240)에 연결된다. 리프트 후프(270)는 일단이 개방된 말발굽 형상으로 이루어져 있으나, 그 형상은 다양하게 변경될 수 있다.The first pin support member 230a is responsible for loading/unloading the substrate from the first susceptor 110a, and the second pin support member 230b is for loading/unloading the substrate from the second susceptor 110b. is responsible for The first and second pin support members 230a and 230b support the lift hoop 270 in which three lift pins 260 positioned in the pinholes 112 are vertically installed, and the lift hoop 270, and process the process. It includes a shaft 236 installed through the outer bottom surface of the chamber 100 , a bellows 280 installed at the lower end of the shaft 236 , and a bracket 239 to which the shaft 236 is fixed. A floating joint 250 is connected to the bottom of the bracket 239 , and one side thereof is connected to the first and second guide members 240 . The lift hoop 270 has a horseshoe shape with one open end, but the shape may be variously changed.
플로팅 조인트(250)는 제1,2핀 지지부재(230a,230b)의 브라켓(239)과 수평대(220) 사이에 설치되어 제1,2가이드부재(240)에 의해 이동하는 제1,2핀 지지부재(230a,230b)의 이동방향과, 수평대(220)의 이동방향 간의 각도 차이를 허용하여, 제1,2핀 지지부재(230a,230b)의 안정적인 수직 이동을 제공하게 된다. 특히, 조립 과정에서 수평대(220)의 수평이 틀어지거나 가공 오차 등으로 위치가 틀어져서 생기는 제1,2핀 지지부재(230a,230b)의 직선 운동 방해요인을 플로팅 조인트(250)이 제거해준다. 다시 말하면, 리프트 핀 어셈블리(200)는 중앙에 배치되는 구동부재(210)와 양측에 배치되는 제1,2가이드 부재(240)가 동시에 직선 운동을 하도록 기구적으로 연결된다. 따라서, 구동 부재(210)에 의해 이동되는 수평대(220)의 이동방향, 수평대(220)의 수평 상태, 제1,2가이드부재(240)에 의해 안내되는 제1,2핀 지지부재(230a,230b)의 이동방향이 조립 과정에서 정확하게 세팅되지 않더라도, 플로팅 조인트(250)가 제1,2핀 지지부재(230a,230b)의 운동 방향을 수직한 직선 방향으로 유도하여 각도 틀어짐으로 발생되는 진동을 방지할 수 있다. The floating joint 250 is installed between the bracket 239 and the horizontal bar 220 of the first and second pin support members 230a and 230b, and is installed between the first and second pin support members 230a and 230b to move by the first and second guide members 240 . By allowing an angular difference between the movement direction of the pin support members 230a and 230b and the movement direction of the horizontal bar 220, stable vertical movement of the first and second pin support members 230a and 230b is provided. In particular, the floating joint 250 removes the linear motion obstruction of the first and second pin support members 230a and 230b caused by the horizontal position of the horizontal bar 220 being misaligned during the assembly process or due to a machining error, etc. . In other words, the lift pin assembly 200 is mechanically connected so that the driving member 210 disposed in the center and the first and second guide members 240 disposed at both sides simultaneously linearly move. Accordingly, the moving direction of the horizontal bar 220 moved by the driving member 210 , the horizontal state of the horizontal bar 220 , and the first and second pin support members guided by the first and second guide members 240 ( Even if the movement direction of 230a and 230b is not set accurately during the assembly process, the floating joint 250 induces the movement direction of the first and second pin support members 230a and 230b in a vertical straight direction, which is caused by angular deviation. vibration can be prevented.
제1,2가이드 부재(240)는 제1,2핀 지지부재(230a,230b)의 이동을 안내하게 되며, 공정 챔버(100)의 외측 저면에 설치된다. The first and second guide members 240 guide the movement of the first and second pin support members 230a and 230b, and are installed on the outer bottom surface of the process chamber 100 .
리프트 핀 어셈블리(200)는 리프트 핀(260)들이 기판 출입구(102)의 개방에 따라 로봇(미도시됨)에 의해 투입 위치되는 기판(w)의 저면을 받친 상태에서 구동부재(210)에 의해 하강(다운위치)되어 제1,2서셉터(110a,110b) 상면에 기판을 안정적으로 올려놓게 된다. The lift pin assembly 200 is formed by the driving member 210 in a state in which the lift pins 260 support the bottom surface of the substrate w, which is placed by a robot (not shown) according to the opening of the substrate entrance 102 . It is lowered (down position) to stably place the substrate on the upper surfaces of the first and second susceptors 110a and 110b.
도 7은 리프트 핀을 보여주는 도면이고, 도 8은 리프트 핀의 하단부분을 보여주는 도면이며, 도 9는 리프트 핀에 와셔가 장착된 상태를 설명하기 위한 도면이다..7 is a view showing a lift pin, FIG. 8 is a view showing a lower portion of the lift pin, and FIG. 9 is a view for explaining a state in which a washer is mounted on the lift pin.
도 5 내지 도 9를 참조하면, 리프트 핀(260)은 리프트 후프(270)에 체결되는 체결부를 갖는 하단부분(264)과, 기판과 접촉하는 접촉부를 갖는 상단부분(262)을 포함할 수 있다. 상단부분(262)은 평탄한 평탄면(263)을 갖는다. 평탄면(263)은 리프트 핀(260)을 리프트 후프(270)에 체결하는 과정에서 작업자가 일정한 토크로 체결할 수 있도록 도움을 준다. 5 to 9 , the lift pin 260 may include a lower portion 264 having a fastening portion fastened to the lift hoop 270 and an upper portion 262 having a contact portion in contact with the substrate. . The top portion 262 has a flat flat surface 263 . The flat surface 263 helps the operator to fasten the lift pin 260 to the lift hoop 270 with a constant torque.
하단부분(264)은 나사산이 형성된 나사부(265)와 나사부(265) 상부에 제공되는 받침부(266) 그리고 나사부(265)와 받침부(266) 사이에 높이조절용 와셔(269)가 삽입되는 삽입홈(267)을 갖는다. 나사부(265)는 나사산이 형성된 외주면을 길이방향으로 절단한 절단면(265a)이 갖는다. 절단면(265a)은 좌, 우 대칭이 되도록 제공된다. 높이조절용 와셔(269)는 나사부(265)의 평단면(265a) 형상과 대응되는 관통공(269a)을 갖는다. 관통공(269a)의 짧은 폭의 길이(L1)은 삽입홈(267)의 직경과 대응된다. 높이조절용 와셔(269)는 나사부(265)를 통해 삽입홈(267)에 위치된 후 90도 방향을 돌리면 나사부(265)로부터 이탈되는 것을 방지할 수 있다.The lower portion 264 is a screw portion 265 and a support portion 266 provided on the screw portion 265, and a washer 269 for height adjustment between the screw portion 265 and the support portion 266 is inserted. It has a groove 267 . The threaded portion 265 has a cut surface 265a obtained by cutting the outer circumferential surface on which the thread is formed in the longitudinal direction. The cut surface 265a is provided to be left and right symmetrical. The washer 269 for height adjustment has a through hole 269a corresponding to the shape of the flat cross-section 265a of the screw portion 265 . The short length L1 of the through hole 269a corresponds to the diameter of the insertion groove 267 . The washer 269 for height adjustment is positioned in the insertion groove 267 through the screw portion 265 and then rotates 90 degrees to prevent separation from the screw portion 265 .
도 10은 리프트 핀이 장착된 상태를 보여주는 요부 단면도이다. 10 is a cross-sectional view of a main part showing a state in which a lift pin is mounted.
도 10을 참조하면, 리프트 핀은 높이조절용 와셔(269)가 도 9와 같이 장착된 상태에서 제1서셉터(110a)의 상면으로부터 핀홀(112)을 통해 리프트 후프(270)의 체결홀(273)에 체결된다. 이 과정에서 리프트 핀(260)의 기울어짐을 방지하기 위한 쳐짐방지 지그(290)가 사용된다. 쳐짐방지 지그(290)는 리프트 핀(260)이 핀홀(112)에 삽입된 상태에서 제1서셉터(110a)의 상면으로부터 핀홀(112)에 끼워진다. 쳐짐방지 지그(290)는 리프트 핀(260)이 리프트 후프(270)의 체결홀(273)에 체결되는 과정에서 리프트 핀(260)의 수직도를 잡아주게 된다. 쳐짐방지 지그(290)는 리프트 핀(260)이 삽입되는 관통공(292)을 갖는다. 쳐짐방지 지그(290)는 리프트 핀(260)의 장착이 완료된 후에는 제거된다. 참고로, 핀홀(112)의 직경은 리프트 핀(260)의 직경보다 크게 제공된다. Referring to FIG. 10 , the lift pin has a fastening hole 273 of the lift hoop 270 through the pinhole 112 from the upper surface of the first susceptor 110a in a state where the washer 269 for height adjustment is mounted as shown in FIG. 9 . ) is connected to In this process, an anti-sag jig 290 for preventing the lift pin 260 from being tilted is used. The anti-sagging jig 290 is fitted into the pinhole 112 from the upper surface of the first susceptor 110a in a state in which the lift pin 260 is inserted into the pinhole 112 . The anti-sag jig 290 holds the verticality of the lift pin 260 while the lift pin 260 is fastened to the fastening hole 273 of the lift hoop 270 . The anti-sag jig 290 has a through hole 292 into which the lift pin 260 is inserted. The anti-sag jig 290 is removed after the mounting of the lift pin 260 is completed. For reference, the diameter of the pinhole 112 is provided to be larger than the diameter of the lift pin 260 .
도 11은 리프트 후프를 보여주는 도면이다.11 is a view showing a lift hoop.
도 11을 참조하면, 리프트 후프(270)는 리프트 핀(260)들이 장착되는 체결홀(273)들을 갖는 링 형상의 링부분(272); 및 샤프트(236)에 지지되는 지지부분(274)을 갖는다. 그리고 지지부분(274)과 링부분(272) 사이에는 오목하게 형성된 오목부분(279)을 갖는다. 이러한 형상을 통해 리프트 후프(270)의 무게중심을 샤프트(236)와 일치하도록 개선함으로써, 링부분(272)의 처짐 문제를 최소화할 수 있다. Referring to FIG. 11 , the lift hoop 270 includes a ring-shaped ring portion 272 having fastening holes 273 to which lift pins 260 are mounted; and a support portion 274 supported on the shaft 236 . And between the support portion 274 and the ring portion 272 has a concave portion 279 formed to be concave. By improving the center of gravity of the lift hoop 270 to coincide with the shaft 236 through this shape, the problem of deflection of the ring portion 272 can be minimized.
도 12는 벨로우즈는 보여주는 단면도이다.12 is a cross-sectional view showing the bellows.
도 12를 참조하면, 벨로우즈(280)는 챔버(100) 하단에 연결되는 상부 플랜지(282)와 주름관(284)을 포함한다. 주름관(284)은 상단이 상부 플랜지(282)에 고정되고, 하단이 샤프트(236)가 고정되는 브라켓(239)에 고정될 수 있다. 샤프트(236)는 벨로우즈(280) 내부 공간에 수직하게 위치되며, 샤프트(236)의 외주면에는 샤프트링(237)이 제공된다. 샤프트링(237)은 샤프트9236)와 벨로우즈(280) 사이의 유격을 최소화할 수 있다. 샤프트링(237)은 상부 플랜지(282)와 동일선상에 위치된다. Referring to FIG. 12 , the bellows 280 includes an upper flange 282 and a corrugated pipe 284 connected to the lower end of the chamber 100 . The corrugated pipe 284 may have an upper end fixed to the upper flange 282 and a lower end fixed to a bracket 239 to which the shaft 236 is fixed. The shaft 236 is positioned perpendicular to the inner space of the bellows 280 , and a shaft ring 237 is provided on an outer circumferential surface of the shaft 236 . The shaft ring 237 may minimize play between the shaft 9236 and the bellows 280 . The shaft ring 237 is positioned flush with the upper flange 282 .
상기와 같이, 샤프트(236)의 외주면에 샤프트링(237)이 제공됨으로써 샤프트(236)가 기울어지는 것을 최소화할 수 있다. 따라서, 샤프트(236)와 벨로우즈(280) 사이의 유격으로 인해 발생되는 미세한 기울어짐을 방지함으로써 각 구동부간의 높이를 동일하게 유지시킬 수 있다.As described above, since the shaft ring 237 is provided on the outer circumferential surface of the shaft 236 , it is possible to minimize the inclination of the shaft 236 . Accordingly, it is possible to maintain the same height between the respective driving units by preventing a minute inclination generated due to the clearance between the shaft 236 and the bellows 280 .
이상의 상세한 설명은 본 발명을 예시하는 것이다. 또한 전술한 내용은 본 발명의 바람직한 실시 형태를 나타내어 설명하는 것이며, 본 발명은 다양한 다른 조합, 변경 및 환경에서 사용할 수 있다. 즉 본 명세서에 개시된 발명의 개념의 범위, 저술한 개시 내용과 균등한 범위 및/또는 당업계의 기술 또는 지식의 범위내에서 변경 또는 수정이 가능하다. 저술한 실시예는 본 발명의 기술적 사상을 구현하기 위한 최선의 상태를 설명하는 것이며, 본 발명의 구체적인 적용 분야 및 용도에서 요구되는 다양한 변경도 가능하다. 따라서 이상의 발명의 상세한 설명은 개시된 실시 상태로 본 발명을 제한하려는 의도가 아니다. 또한 첨부된 청구범위는 다른 실시 상태도 포함하는 것으로 해석되어야 한다.The above detailed description is illustrative of the present invention. In addition, the above description shows and describes preferred embodiments of the present invention, and the present invention can be used in various other combinations, modifications, and environments. That is, changes or modifications are possible within the scope of the concept of the invention disclosed herein, the scope equivalent to the written disclosure, and/or within the scope of skill or knowledge in the art. The written embodiment describes the best state for implementing the technical idea of the present invention, and various changes required in specific application fields and uses of the present invention are possible. Accordingly, the detailed description of the present invention is not intended to limit the present invention to the disclosed embodiments. Also, the appended claims should be construed to include other embodiments as well.

Claims (20)

  1. 리프트 핀 어셈블리에 있어서:For the lift pin assembly:
    구동 부재;drive member;
    상기 구동 부재에 의해 수직방향으로 승/하강하는 수평대;a horizontal bar elevating/lowering in the vertical direction by the driving member;
    리프트 핀들이 설치되며, 상기 수평대의 승/하강에 따라 수직방향으로 이동하는 적어도 하나의 핀 지지부재; 및at least one pin support member having lift pins installed and moving in a vertical direction according to the rising/lowering of the horizontal bar; and
    상기 핀 지지부재의 이동을 안내하는 가이드부재를 포함하되;including a guide member for guiding the movement of the pin support member;
    상기 핀 지지부재는The pin support member is
    상기 리프트 핌들이 설치되는 리프트 후프;a lift hoop to which the lift pims are installed;
    상기 리프트 후프를 지지하는 샤프트;a shaft supporting the lift hoop;
    상기 샤프트를 감싸도록 제공되는 벨로우즈; 및a bellows provided to surround the shaft; and
    상기 샤프트와 상기 벨로우즈 사이의 유격 방지를 위해 상기 샤프트 외주면에 제공되는 샤프트링을 포함하는 리프트 핀 어셈블리. and a shaft ring provided on an outer circumferential surface of the shaft to prevent play between the shaft and the bellows.
  2. 제1항에 있어서,According to claim 1,
    상기 밸로우즈는The bellows
    챔버 하단에 연결되는 상부 플랜지;an upper flange connected to the bottom of the chamber;
    상단은 상기 상부 플랜지에 고정되고, 하단은 상기 샤프트가 고정되는 브라켓에 고정되는 주름관을 포함하며,The upper end is fixed to the upper flange, the lower end includes a corrugated pipe fixed to the bracket to which the shaft is fixed,
    상기 샤프트링은 상기 상부 플랜지와 동일선상에 위치되도록 상기 샤프트에 설치되는 리프트 핀 어셈블리. The shaft ring is a lift pin assembly installed on the shaft so as to be positioned on the same line with the upper flange.
  3. 제1항에 있어서,According to claim 1,
    상기 리프트 핀은The lift pin is
    상기 리프트 후프에 체결되는 체결부를 갖는 하단부분과, 기판과 접촉하는 접촉부를 갖는 상단부분을 가지며,It has a lower portion having a fastening portion fastened to the lift hoop, and an upper portion having a contact portion in contact with the substrate,
    상기 상단부분은 the upper part
    평탄한 평탄면을 갖는 리프트 핀 어셈블리. A lift pin assembly with a flat flat surface.
  4. 제1항에 있어서,According to claim 1,
    상기 하단부분은the lower part
    나사산이 형성된 나사부와 나사부 상부에 제공되는 받침부; 및a support provided on the threaded part and the threaded part; and
    상기 나사부와 상기 받침부 사이에 높이조절용 와셔가 삽입되는 삽입홈을 갖는 리프트 핀 어셈블리. A lift pin assembly having an insertion groove into which a washer for height adjustment is inserted between the screw part and the support part.
  5. 제4항에 있어서,5. The method of claim 4,
    상기 나사부는the screw part
    나사산이 형성된 외주면을 길이방향으로 절단한 절단면이 형성되도록 하되, 상기 절단면은 좌, 우 대칭이 되도록 제공되는 리프트 핀 어셈블리. A lift pin assembly provided such that a cut surface is formed by cutting an outer circumferential surface having a screw thread in the longitudinal direction, wherein the cut surface is symmetric to the left and right.
  6. 제5항에 있어서,6. The method of claim 5,
    상기 높이조절용 와셔는The washer for height adjustment is
    상기 나사부의 평단면 형상과 대응되는 관통공을 갖는 리프트 핀 어셈블리. A lift pin assembly having a through hole corresponding to a flat cross-sectional shape of the screw portion.
  7. 제1항에 있어서,According to claim 1,
    상기 리프트 후프는The lift hoop is
    상기 리프트 핀들이 장착되는 체결홀들을 갖는 링 형상의 링부분; 및a ring-shaped ring portion having fastening holes to which the lift pins are mounted; and
    상기 샤프트에 지지되는 지지부분을 갖고,having a support portion supported on the shaft;
    상기 지지부분과 상기 링부분 사이에는 오목하게 형성된 오목부분을 갖는 리프트 핀 어셈블리. A lift pin assembly having a concave portion concavely formed between the support portion and the ring portion.
  8. 기판 처리 장치에 있어서:A substrate processing apparatus comprising:
    공정 챔버;process chamber;
    상기 공정 챔버 내부에 서로 이격되어 설치되고, 복수개의 핀 홀을 갖는 제1,2서셉터;first and second susceptors installed spaced apart from each other in the process chamber and having a plurality of pin holes;
    상기 제1서셉터의 핀 홀들과 각각 대응하는 복수개의 리프트 핀들을 갖는 제1 핀 지지부재;a first pin support member having a plurality of lift pins respectively corresponding to the pin holes of the first susceptor;
    상기 제2서셉터의 핀 홀들과 각각 대응하는 복수개의 리프트 핀들을 갖는 제2 핀 지지부재; 및a second pin support member having a plurality of lift pins respectively corresponding to the pin holes of the second susceptor; and
    상기 제1,2핀 지지부재를 수직 방향으로 상승 또는 하강시키는 구동 부재를 포함하되; a driving member for vertically raising or lowering the first and second pin support members;
    상기 제1핀 지지부재 및 상기 제2핀 지지부재 각각은Each of the first pin support member and the second pin support member
    상기 리프트 핀들이 설치되는 리프트 후프;a lift hoop to which the lift pins are installed;
    상기 리프트 후프를 지지하는 샤프트;a shaft supporting the lift hoop;
    상기 샤프트를 감싸도록 제공되는 벨로우즈; 및a bellows provided to surround the shaft; and
    상기 샤프트와 상기 벨로우즈 사이의 유격 방지를 위해 상기 샤프트 외주면에 제공되는 샤프트링을 포함하는 기판 처리 장치.and a shaft ring provided on an outer circumferential surface of the shaft to prevent a gap between the shaft and the bellows.
  9. 제8항에 있어서,9. The method of claim 8,
    상기 밸로우즈는The bellows
    챔버 하단에 연결되는 상부 플랜지;an upper flange connected to the bottom of the chamber;
    상단은 상기 상부 플랜지에 고정되고, 하단은 상기 샤프트가 고정되는 브라켓에 고정되는 주름관을 포함하며,The upper end is fixed to the upper flange, the lower end includes a corrugated pipe fixed to the bracket to which the shaft is fixed,
    상기 샤프트링은 상기 상부 플랜지와 동일선상에 위치되도록 상기 샤프트에 설치되는 기판 처리 장치.The shaft ring is installed on the shaft to be positioned on the same line with the upper flange.
  10. 제8항에 있어서,9. The method of claim 8,
    상기 리프트 핀은The lift pin is
    상기 리프트 후프에 체결되는 체결부를 갖는 하단부분과, 기판과 접촉하는 접촉부를 갖는 상단부분을 가지며,It has a lower end portion having a fastening portion fastened to the lift hoop, and an upper portion having a contact portion in contact with the substrate,
    상기 상단부분은 the upper part
    평탄한 평탄면을 갖는 기판 처리 장치.A substrate processing apparatus having a flat flat surface.
  11. 제8항에 있어서,9. The method of claim 8,
    상기 하단부분은the lower part
    나사산이 형성된 나사부와 나사부 상부에 제공되는 받침부; 및a support provided on the threaded part and the threaded part; and
    상기 나사부와 상기 받침부 사이에 높이조절용 와셔가 삽입되는 삽입홈을 갖는 기판 처리 장치.A substrate processing apparatus having an insertion groove into which a washer for height adjustment is inserted between the screw part and the support part.
  12. 제11항에 있어서,12. The method of claim 11,
    상기 나사부는the screw part
    나사산이 형성된 외주면을 길이방향으로 절단한 절단면이 형성되도록 하되, 상기 절단면은 좌, 우 대칭이 되도록 제공되는 기판 처리 장치. A substrate processing apparatus provided such that a cut surface is formed by cutting the outer circumferential surface on which the thread is formed in the longitudinal direction, wherein the cut surface is symmetric to the left and right.
  13. 제12항에 있어서,13. The method of claim 12,
    상기 높이조절용 와셔는The washer for height adjustment is
    상기 나사부의 평단면 형상과 대응되는 관통공을 갖는 기판 처리 장치. A substrate processing apparatus having a through hole corresponding to a flat cross-sectional shape of the screw portion.
  14. 제8항에 있어서,9. The method of claim 8,
    상기 리프트 후프는The lift hoop is
    상기 리프트 핀들이 장착되는 체결홀들을 갖는 링 형상의 링부분; 및a ring-shaped ring portion having fastening holes to which the lift pins are mounted; and
    상기 샤프트에 지지되는 지지부분을 갖고,having a support portion supported on the shaft;
    상기 지지부분과 상기 링부분 사이에는 오목하게 형성된 오목부분을 갖는 기판 처리 장치. A substrate processing apparatus having a concave portion formed concavely between the support portion and the ring portion.
  15. 제8항에 있어서,9. The method of claim 8,
    상기 제1,2서셉터의 상면으로부터 상기 핀홀에 끼워지는 그리고 상기 리프트 핀이 상기 리프트 후프의 체결홀에 체결되는 과정에서 상기 리프트 핀의 수직도를 잡아주는 쳐짐방지 지그를 더 포함하는 기판 처리 장치. The substrate processing apparatus further comprising an anti-sag jig fitted into the pinhole from the upper surfaces of the first and second susceptors and holding the verticality of the lift pin while the lift pin is fastened to the fastening hole of the lift hoop. .
  16. 제15항에 있어서,16. The method of claim 15,
    상기 쳐짐방지 지그는The anti-sagging jig is
    상기 리프트 핀이 삽입되는 관통공을 갖는 기판 처리 장치. A substrate processing apparatus having a through hole into which the lift pin is inserted.
  17. 제16항에 있어서,17. The method of claim 16,
    상기 리프트 핀은 상기 제1,2서셉터의 상면으로부터 상기 핀홀을 통해 상기 리프트 후프의 체결홀에 체결되는 기판 처리 장치. The lift pins are fastened from upper surfaces of the first and second susceptors to the fastening holes of the lift hoops through the pin holes.
  18. 제8항에 있어서,9. The method of claim 8,
    상기 리프트 핀 어셈블리는The lift pin assembly is
    상기 제1,2핀 지지부재의 상기 브라켓과 상기 수평대 사이에 설치되어 상기 제1,2가이드부재에 의해 이동하는 상기 제1,2핀 지지부재의 이동방향과, 상기 수평대의 이동방향 간의 각도 차이를 허용하기 위한 플로팅 조인트를 더 포함하는 것을 특징으로 하는 기판 처리 장치.An angle between the moving direction of the first and second pin support members installed between the bracket of the first and second pin support members and the horizontal bar and moving by the first and second guide members, and the moving direction of the horizontal bar and a floating joint for allowing for a difference.
  19. 제8항에 있어서,9. The method of claim 8,
    상기 공정 챔버는 the process chamber
    상기 제1서셉터가 위치되는 제1공간과, 상기 제2서셉터가 위치되는 제2공간 그리고 상기 제1공간과 제2공간이 동등한 구조를 갖도록 상기 공정 챔버 내부를 구획하는 구획벽을 더 포함하는 것을 특징으로 하는 기판 처리 장치.A first space in which the first susceptor is positioned, a second space in which the second susceptor is positioned, and a partition wall partitioning the inside of the process chamber so that the first space and the second space have the same structure A substrate processing apparatus, characterized in that.
  20. 제19항에 있어서,20. The method of claim 19,
    상기 기판 처리 장치는 The substrate processing apparatus
    상기 공정 챔버의 제1 공간의 상부에 설치되며, 상기 제1공간으로 플라즈마(plasma)와 공정가스를 공급하는 분사하는 제1공급부재와,a first supply member installed in an upper portion of the first space of the process chamber and configured to inject plasma and process gas into the first space;
    상기 공정 챔버의 제2 공간의 상부에 설치되며, 상기 제2공간으로 플라즈마(plasma)와 공정가스를 공급하는 분사하는 제2공급부재를 더 포함하는 것을 특징으로 하는 기판 처리 장치.and a second supply member installed above the second space of the process chamber and configured to inject plasma and process gas into the second space.
PCT/KR2022/000468 2021-02-03 2022-01-11 Lift pin assembly and substrate processing device including same WO2022169125A1 (en)

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KR1020210015335A KR102608461B1 (en) 2021-02-03 2021-02-03 Apparatus for treating substrates

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002242919A (en) * 2001-02-20 2002-08-28 Masataka Ishii Bolt/nut tightening tool
KR20040022530A (en) * 2002-09-09 2004-03-16 주성엔지니어링(주) Lift-assembly for Wafer-process
KR20080089791A (en) * 2007-04-02 2008-10-08 삼성전자주식회사 Wafer lift unit and semiconductor manufacturing apparatus with the same
KR20080114151A (en) * 2007-06-27 2008-12-31 피에스케이 주식회사 Apparatus for treating substrates
KR20090048724A (en) * 2007-11-12 2009-05-15 주식회사 테스 Substrate support apparatus and substrate processing apparatus having the same

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08124999A (en) * 1994-10-27 1996-05-17 Kokusai Electric Co Ltd Detachable structure of substrate push-up pin
KR200437133Y1 (en) * 2007-06-04 2007-11-05 김재명 Bolt with washer and washer attachable Bolt

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002242919A (en) * 2001-02-20 2002-08-28 Masataka Ishii Bolt/nut tightening tool
KR20040022530A (en) * 2002-09-09 2004-03-16 주성엔지니어링(주) Lift-assembly for Wafer-process
KR20080089791A (en) * 2007-04-02 2008-10-08 삼성전자주식회사 Wafer lift unit and semiconductor manufacturing apparatus with the same
KR20080114151A (en) * 2007-06-27 2008-12-31 피에스케이 주식회사 Apparatus for treating substrates
KR20090048724A (en) * 2007-11-12 2009-05-15 주식회사 테스 Substrate support apparatus and substrate processing apparatus having the same

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