WO2022165820A1 - 驱动电路、发光单元、发射模组、感测装置和电子设备 - Google Patents

驱动电路、发光单元、发射模组、感测装置和电子设备 Download PDF

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Publication number
WO2022165820A1
WO2022165820A1 PCT/CN2021/075889 CN2021075889W WO2022165820A1 WO 2022165820 A1 WO2022165820 A1 WO 2022165820A1 CN 2021075889 W CN2021075889 W CN 2021075889W WO 2022165820 A1 WO2022165820 A1 WO 2022165820A1
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WIPO (PCT)
Prior art keywords
sensing
light source
light
switch
driving circuit
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PCT/CN2021/075889
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English (en)
French (fr)
Inventor
王小明
吕晨晋
李佳鹏
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深圳阜时科技有限公司
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Application filed by 深圳阜时科技有限公司 filed Critical 深圳阜时科技有限公司
Priority to PCT/CN2021/075889 priority Critical patent/WO2022165820A1/zh
Priority to CN202180000367.1A priority patent/CN112912764A/zh
Publication of WO2022165820A1 publication Critical patent/WO2022165820A1/zh

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
    • G01S17/02—Systems using the reflection of electromagnetic waves other than radio waves
    • G01S17/06—Systems determining position data of a target
    • G01S17/08—Systems determining position data of a target for measuring distance only
    • G01S17/10—Systems determining position data of a target for measuring distance only using transmission of interrupted, pulse-modulated waves
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
    • G01S7/481—Constructional features, e.g. arrangements of optical elements
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
    • G01S7/483—Details of pulse systems
    • G01S7/484—Transmitters
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
    • G01S7/483—Details of pulse systems
    • G01S7/486—Receivers
    • G01S7/4861—Circuits for detection, sampling, integration or read-out
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
    • G01S7/483—Details of pulse systems
    • G01S7/486—Receivers
    • G01S7/4861—Circuits for detection, sampling, integration or read-out
    • G01S7/4863—Detector arrays, e.g. charge-transfer gates

Definitions

  • the present application relates to the technical field of photoelectric sensing, and more particularly, to a transmitting module, a time-of-flight device and an electronic device in a time-of-flight device.
  • Time of Flight (TOF) device calculates the distance, or depth, of an object by measuring the time of flight of light pulses in space. It is widely used in consumer products due to its long sensing distance and large measurement range. Electronics, unmanned driving, AR/VR and other fields.
  • the TOF device includes a transmitting module and a receiving module.
  • the emitting module is used for emitting light pulses to the target space to provide illumination.
  • the receiving module is used to receive the light pulses returned from the external objects, and calculate the distance of the objects according to the time required for the light pulses to be transmitted and received.
  • the embodiments of the present application aim to solve at least one of the technical problems existing in the prior art. To this end, the embodiments of the present application need to provide a driving circuit, a light-emitting unit, an emission module, a sensing device, and an electronic device.
  • the present application provides a drive circuit for driving a sensing light source to emit sensing light pulses, the sensing light pulses being used to irradiate an external object to sense relevant information, the drive circuit comprising:
  • a first switch connected between the first power supply and the first node
  • the energy storage capacitor is used for receiving the voltage from the first power supply through the turned-on first switch, for storing electric energy and for pre-biasing the reverse voltage of the single-photon avalanche diode to a predetermined value. Assuming an avalanche voltage, the energy storage capacitor is further configured to discharge the sensing light source when an avalanche occurs in the single-photon avalanche diode, and trigger the sensing light source to emit the sensing light pulse.
  • the preset avalanche voltage is greater than or equal to a critical avalanche voltage of the single-photon avalanche diode, and the critical avalanche voltage is a minimum voltage value at which the single-photon avalanche diode can avalanche.
  • the preset avalanche voltage is greater than the critical avalanche voltage, and the voltage difference between the two ranges from 5 volts to 10 volts.
  • the first switch is in an open state during an avalanche of the single-photon avalanche diode.
  • the conduction of the first switch is controlled by a control unit.
  • the single-photon avalanche diode is configured to receive an excitation beam from an excitation circuit, and the excitation beam is used to trigger an avalanche of the single-photon avalanche diode.
  • the excitation beam is conducted from the excitation circuit to the single-photon avalanche diode through a light-guiding element.
  • the excitation circuit includes an excitation light source and a second switch, the excitation light source and the second switch are connected in series, the excitation light source is configured to emit the excitation light when the second switch is turned on excitation beam.
  • the excitation light source and the second switch are connected in series between the second power supply and the ground, and when the second switch is turned on, the excitation light source is used to receive signals from the first power source.
  • the excitation light beam is emitted by the electric energy of two power supplies; or, the excitation light source and the second switch are connected in series between a second node and the ground, and the second node is further connected to the first power supply and the ground.
  • the first switches are respectively connected, and when the second switches are turned on, the excitation light source is configured to receive electric energy from the first power supply to emit the excitation beam.
  • control unit is configured to control whether the second switch is turned on or off.
  • the control unit when the sensing light source is required to emit the sensing light pulse, the control unit first controls the first switch to be closed, and the energy storage capacitor receives through the closed first switch The voltage from the first power supply is pre-charged. After the energy storage capacitor is fully charged, the control unit controls the first switch to turn off, and the control unit further controls the second switch to turn on.
  • the excitation circuit emits the excitation beam to trigger the avalanche of the single-photon avalanche diode, and the sensing light source emits the sensing light pulse when the avalanche occurs in the single-photon avalanche diode.
  • the sensing light source stops emitting sensing light pulses when the reverse pinching voltage of the energy storage capacitor discharged to the two ends of the single-photon avalanche diode is less than the critical avalanche voltage; or, when When the current flowing through the sensing light source is less than the threshold current that the sensing light source can emit light, the sensing light source stops emitting sensing light pulses.
  • the single-photon avalanche diode includes a cathode and an anode; the cathode is connected to the sensing light source, the anode is connected to ground, and the sensing light source is further connected to the first node; Alternatively, the cathode is connected to the first node, the anode is connected to the sensing light source, and the sensing light source is further connected to ground.
  • the capacitance value of the storage capacitor is greater than or equal to 10 pF and less than or equal to 1 nanofar.
  • the sensing light pulses are used for sensing depth information of an external object or/and sensing proximity or/and sensing distance of an external object.
  • the series branch where the single-photon avalanche diode and the sensing light source are located includes a plurality of the sensing light sources connected in series.
  • the sensing light source and/or the excitation light source are vertical cavity surface laser emitters.
  • the excitation light source and the light-emitting side of the sensing light source are the same side.
  • the sensing light source is integrated in a light emitting die and the single photon avalanche diode is integrated in a switching die.
  • the on-switch and/or the energy storage capacitor are integrated in the switch die, or the on-switch and/or the energy storage capacitor are integrated in the light-emitting die in the film.
  • the sensing light source and the excitation light source are integrated in a light-emitting die, and the single-photon avalanche diode is integrated in a switching die.
  • the first switch and/or the second switch and/or the energy storage capacitor are integrated in the switch die, or the first switch and/or the second switch Two switches and/or the storage capacitor are integrated in the light-emitting die.
  • the light emitting die includes a first light emitting area and a second light emitting area, wherein the first light emitting area is used for emitting the sensing light pulse, and the second light emitting area is used for emitting For the excitation beam, the switch die is disposed above the second light-emitting area of the light-emitting die, and is used for receiving the excitation beam.
  • the switch die includes a receiving surface for receiving the excitation beam, the switch die is inverted over the second light emitting area, the receiving surface faces the second light emitting area .
  • the switch die and the light emitting die are vertically connected via metal bumps
  • At least the sensing light source and the single-photon avalanche diode are integrated in a light-emitting die,
  • the driving circuit is a driving circuit in a transmitting module in a time-of-flight device, and is used to drive the sensing light source to emit sensing light pulses to an external object, and the receiving circuit in the time-of-flight device The device is used to receive the sensed light pulses returned by the external object to obtain relevant sensed information.
  • the present application also provides a light-emitting unit, comprising the drive circuit described in any of the above and a sensing light source, the drive circuit is used to drive the sensing light source to emit sensing light pulses, and the sensing light pulses use for obtaining depth information or/and proximity information or/and distance information of external objects.
  • the present application also provides an emission module, including the light-emitting unit.
  • the emitting module further includes a modulation element, which is arranged in the light emitting direction of the sensing light source and is used to modulate the sensing light pulses emitted by the sensing light source.
  • the modulating element includes a light homogenizer, which is used for homogenizing the light beam emitted from the sensing light source to form a flood beam; or, the modulating element includes an optical diffractive element, using The light beam emitted from the sensing light source is replicated and expanded to form a speckle pattern.
  • the emission module further includes a light guide element disposed between the sensing light source and the modulation element, and the light guide element is used to transmit the excitation beam to the single Photon Avalanche Diode on.
  • the present application also provides a sensing device, including a transmitting module and a receiving module, the transmitting module is used for transmitting sensing light pulses to an external object, and the receiving module is used for receiving the sensing returned by the external object light pulses and convert the received sensing light pulses into corresponding electrical signals to obtain relevant sensing information of external objects, wherein the emitting device is the emitting module described in any one of the above.
  • the sensing device is a time-of-flight device for sensing depth information or/and proximity information of external objects.
  • the present application further provides an electronic device, including the sensing device described in any one of the above.
  • a single-photon avalanche diode connected in series with the sensing light source is arranged in the driving circuit of the present application. Since the single-photon avalanche diode can generate an avalanche as long as it receives one photon, the response speed is particularly fast, and the on-resistance is very high. Therefore, the pulse width of the sensing light pulse emitted by the sensing light source can be narrower, so that the sensing accuracy can be improved. Correspondingly, the light-emitting unit, the emission module, the sensing device, and the electronic device including the driving circuit have high sensing accuracy.
  • FIG. 1 shows a schematic structural diagram of a sensing device according to an embodiment of the present application.
  • FIG. 2 is a schematic diagram of a partial circuit structure of the light emitting unit according to the first embodiment of the present application.
  • FIG. 3 is a schematic diagram of a partial circuit structure of a light emitting unit according to a second embodiment of the present application.
  • FIG. 4 is a schematic diagram of a partial circuit structure of a light emitting unit according to another modified embodiment of the present application.
  • FIG. 5 is a structural block diagram of a light emitting unit according to a third embodiment of the present application.
  • FIG. 6 is a schematic diagram of a partial circuit structure of a light emitting unit according to another modified embodiment of the present application.
  • FIG. 7 is a schematic diagram of a partial circuit structure of a light emitting unit according to another modified embodiment of the present application.
  • FIG. 8 is a schematic top-view structural diagram of a light-emitting unit according to a fourth embodiment of the present application.
  • Fig. 9 is a schematic cross-sectional view taken along line IX-IX' of Fig. 8 .
  • FIG. 10 is a schematic top-view structural diagram of a light-emitting unit according to a fifth embodiment of the present application.
  • Fig. 11 is a schematic cross-sectional view taken along line XI-XI' of Fig. 10 .
  • FIG. 12 is a schematic top-view structural diagram of a light-emitting unit according to a sixth embodiment of the present application.
  • Fig. 13 is a schematic cross-sectional view taken along line XIII-XIII' of Fig. 12 .
  • FIG. 14 is a structural block diagram of an electronic device according to an embodiment of the application.
  • a single die refers to a product that is cut from a wafer without being packaged.
  • a single chip refers to a product packaged with one or more bare chips (Die).
  • a node in this application refers to a connection point of two or more branches.
  • the rise time and the fall time of the driving current used to drive the sensing light source to emit light in the emission module should be faster.
  • the electronic components in the driving circuit used to generate the driving current in the emission module and the sensing light source are all discrete components, which are electrically connected through wires, etc., so there is an inevitable existence of Large parasitic inductance, parasitic capacitance, parasitic resistance, etc.
  • the inventor has further researched and analyzed a large amount of creative work, and has specially developed at least the following four main aspects to solve the above technical problems individually or in combination.
  • any one of the above-mentioned methods in this application or a combination of several methods can reduce the parasitic inductance, parasitic resistance, etc. in the electronic circuit where the sensing light source is located, thereby reducing the pulse width of the sensing light pulse and improving the sensitivity the purpose of measuring accuracy.
  • FIG. 1 shows a schematic structural diagram of a sensing device according to an embodiment of the present application.
  • the sensing device 10 is used for sending out sensing light pulses to external objects, receiving the sensing light pulses returned by the external objects, and converting the sensing light pulses into corresponding electrical signals, which are used to obtain corresponding electrical signals.
  • sensing information for example, but not limitation, the electrical signal is used to obtain one or more of proximity information, depth information, or distance information of an external object.
  • the depth information is used, for example, in the fields of 3D modeling, face recognition, automatic driving, real-time localization and map construction (simultaneous localization and mapping, SLAM), which is not limited in this application.
  • the proximity information is used, for example, to determine whether an object is approaching or not.
  • the sensing device 10 is, for example, a TOF device.
  • the sensing device 10 can also be other suitable types of devices for sensing proximity information or/and depth information, etc., or even sensing other suitable information, which is not limited in this application.
  • the TOF device is, for example, a direct time of flight (Direct Time Of Flight, D-TOF) device.
  • the D-TOF device performs depth information sensing based on the principle of direct time-of-flight detection.
  • the D-TOF device obtains the depth information of the external object by directly calculating the time difference between the sensing light pulses emitted by the transmitting module and the sensing light pulses received by the receiving module.
  • the TOF device can also be an indirect time of flight (Indirect Time Of Flight, I-TOF) device, for example.
  • the I-TOF device performs depth information sensing based on the principle of indirect time-of-flight detection.
  • the I-TOF device obtains the depth information of the external object by calculating the phase difference between the sensing light pulses emitted by the transmitting module and the sensing light pulses received by the receiving module.
  • the sensing device 10 is mainly described as a D-TOF device as an example. However, it can be understood that the technical solutions protected by the present application can also be extended to other suitable types of sensing devices 10 .
  • the sensing device 10 includes a transmitting module 11 , a receiving module 12 and a processing module 13 .
  • the transmitting module 11 is used for transmitting the sensing light pulse 201 to the space of the external object 20 , and at least part of the transmitted sensing light pulse 201 returns from the external object 20 to form a sensing light pulse 202 .
  • At least some of the photometric pulses 202 are received by the receiving module 12 .
  • the returned sensing light pulse 202 carries, for example, depth information (or, depth information) of the external object 20 .
  • the emission module 11 includes: a light-emitting unit 110 and a modulation element 112 .
  • the light-emitting unit 110 is used for emitting sensing light pulses.
  • the modulation element 112 is used to modulate the sensing light pulses emitted by the light emitting unit 110 to form the sensing light pulses 201 required for sensing, and project the sensing light pulses 201 to the external object 20.
  • the sensing light pulse 201 emitted by the emitting module 11 is, for example, but not limited to, a speckle pattern or a flood light beam.
  • the modulation element 112 is, for example, a diffuser or a light homogenizer, which is used to homogenize the sensing light pulses emitted by the light-emitting unit 110 to form a flood light beam .
  • the modulation element 112 is, for example, a diffractive optical element (Diffractive Optical Elements, DOE), which is used to replicate and expand the sensing light pulse emitted by the light-emitting unit 110 to form speckles. pattern.
  • the speckle patterns may be regularly arranged, and may also be irregularly arranged or randomly arranged.
  • the sensing light pulses emitted to the external object 20 are composed of a plurality of duplicated sensing light pulses, which is beneficial to enlarge the field of view of the sensing device 10 angle and the number of sensed light pulses to improve imaging.
  • the modulation element 112 may also be other suitable beam modulation elements, such as a microlens array, etc., which is not particularly limited in this application. Those skilled in the art can select the corresponding modulation element 112 to modulate the sensing light pulse to obtain the desired sensing light pulse 201 according to actual needs.
  • the modulation element 112 may also be omitted.
  • the emission module 11 may further include other suitable elements, such as a lens unit, disposed between the light-emitting unit 110 and the modulation element 112, for converting the light-emitting
  • suitable elements such as a lens unit, disposed between the light-emitting unit 110 and the modulation element 112, for converting the light-emitting
  • the sensing light pulses emitted by the unit 110 are collimated or converged and then transmitted to the modulation element 112 .
  • the embodiments of the present application do not specifically limit the wavelength range of the sensing light pulses emitted by the light emitting unit 110, for example, it may be infrared light, ultraviolet light, visible light, and the like.
  • the lighting unit 110 may include a single sensing light source 22 (see FIG. 2 ) or multiple sensing light sources 22 .
  • the plurality of sensing light sources 22 may be, for example, an array of light sources arranged regularly or irregularly.
  • the sensing light source 22 as a light source in the form of a vertical cavity surface emitting laser (Vertical-Cavity Surface-Emitting Laser, VCSEL for short, also translated as a vertical resonant cavity surface-emitting laser) as an example
  • the light-emitting unit 110 may include a semiconductor substrate. A base and a VCSEL array die formed by a plurality of VCSEL light sources arranged on the semiconductor substrate.
  • the sensing light source 22 can be, for example, an infrared light emitting diode (Light Emitting Diode, LED), a VCSEL, a laser (Laser diode, LD), a Fabry Perot (FP) laser, a distributed feedback Light sources in the form of a Distribute Feedback (DFB) laser and an Electro-absorption Modulated Laser (EML), which are not limited in this embodiment of the present application.
  • LED Light Emitting Diode
  • VCSEL VCSEL
  • laser Laser diode
  • FP Fabry Perot
  • FP Fabry Perot
  • DFB Distribute Feedback
  • EML Electro-absorption Modulated Laser
  • the receiving module 12 includes an image sensor.
  • the image sensor includes, for example, a pixel array 120 composed of a plurality of pixel units, and the pixel array 120 is configured to receive the sensing light pulses 202 returned from the external object 20 to obtain relevant sensing information, such as but not limited to , to obtain the depth information of the external object 20 .
  • a single pixel unit receives the sensing light pulse 202 for obtaining a depth information of the external object 20 .
  • the single pixel unit may include one pixel, eg, a single photon avalanche photodiode (SPAD) or other suitable photoelectric conversion element, and in other embodiments, the single pixel unit may include multiple pixels , for example, may be an array of pixels consisting of multiple SPADs.
  • SPAD single photon avalanche photodiode
  • the receiving module 12 also includes a readout composed of one or more of a signal amplifier, a time-to-digital converter (TDC), an analog-to-digital converter (ADC) and other devices connected to the image sensor.
  • TDC time-to-digital converter
  • ADC analog-to-digital converter
  • the application is not limited to this.
  • part or all of the readout circuit may also be integrated in the image sensor.
  • the receiving module 12 further includes a lens unit 121 for receiving the sensing light pulses 202 returned from the external object 20, and collimating or converging the sensing light pulses 202 before transmitting to the plurality of pixel units.
  • a lens unit 121 for receiving the sensing light pulses 202 returned from the external object 20, and collimating or converging the sensing light pulses 202 before transmitting to the plurality of pixel units.
  • the processing module 13 is, for example, configured to determine the depth information of the external object 20 according to the time difference between the sensing light pulses 201 and the sensing light pulses 202 , so that the sensing device 10 can detect the depth information of the external object 20 . Depth imaging function of external object 20 .
  • the processing module 13 can also obtain relevant sensing information according to the sensing light pulse 202 and other suitable detection principles, and is not limited to The time difference between the sensing light pulse 201 and the sensing light pulse 202 is used to determine the relevant sensing information.
  • the processing module 13 may be a processing module of the sensing device 10, or may be a processing module of an electronic device including the sensing device 10, for example, a main control module of an electronic device, which is not implemented in this embodiment of the present application. limited.
  • FIG. 2 is a schematic diagram of a partial circuit structure of the light emitting unit 110 according to the first embodiment of the present application.
  • the light-emitting unit 110 includes a driving circuit 20 and the sensing light source 22 .
  • the driving circuit 20 is electrically connected to the sensing light source 22 for driving the sensing light source 22 to emit the sensing light pulses.
  • the driving circuit 20 drives one sensing light source 22 to emit sensing light pulses as an example for description.
  • the driving circuit 20 includes a first switch 21 , a switch tube 23 , an energy storage capacitor 25 , and a control unit 27 .
  • the first switch 21 is connected between the first power supply 14 and the first node N1.
  • the switch tube 23 and the sensing light source 22 are connected in series between the first node N1 and the ground.
  • the storage capacitor 25 is connected between the first node N1 and the ground.
  • the control unit 27 is used to control whether the first switch 21 and the switch tube 23 are turned on or not.
  • the energy storage capacitor 23 is used to receive the voltage from the first power supply 14 through the turned-on first switch 21 to store energy. When the switch tube 23 is turned on, the energy storage capacitor 23 discharges the sensing light source 22 to provide electrical energy for the sensing light source 22 to emit the sensing light pulses.
  • the first switch 21 is in an off state when the switch tube 23 is turned on. Further optionally, the first switch 21 and the switch tube 23 are turned on in a time-sharing manner.
  • the operating principle of the driving circuit 20 driving the sensing light source 22 to emit light is as follows.
  • the control unit 27 first controls the first switch 21 to be turned on, and the voltage of the first power supply 14 precharges the energy storage capacitor 25 through the turned-on first switch 21 . After the energy storage capacitor 25 is fully charged, the control unit 27 controls the first switch 21 to be turned off.
  • the control unit 27 controls the switch tube 23 to be turned on, the energy storage capacitor 25 discharges the sensing light source 22, and the sensing light source 22 emits the sensed light pulses.
  • the sensing light source 22 stops emitting sensing light pulses. For example, when the power on the storage capacitor 25 drops to the point that the driving current generated in the driving circuit 20 is less than the threshold current of the sensing light source 22, the sensing light source 22 stops emitting sensing light pulses.
  • the switch tube 23 is a transistor switch with at least three terminals, such as a metal-oxide semiconductor field effect transistor (as shown in FIG. 2 ), a bipolar junction transistor and other conventional switch tubes .
  • the switch tube 23 can also be other suitable transistor switches with at least three terminals, such as a gallium arsenide transistor or a gallium nitride transistor with a faster response speed.
  • the first switch 21 since the first switch 21 is additionally disposed between the first power supply 14 and the sensing light source 22 , the first switch 21 drives the sensing in the driving circuit 20 .
  • the sensing light source 22 is disconnected during the light-emitting period, therefore, the parasitic inductance, parasitic resistance, parasitic capacitance, etc. on the long connecting wire between the first power supply 14 and the sensing light source 22 are not affected by the sensing light source 22
  • light is emitted, it is not included in the driving circuit 20, so that the adverse effect on the driving current generated by the driving circuit 20 can be reduced, and the rising speed and the falling speed of the driving current can be accelerated.
  • the storage capacitor 25 is used to provide electrical energy to the sensing light source 22 to emit light.
  • the driving current It first increases to a certain maximum current value and then continuously decreases. Therefore, when the electric energy on the energy storage capacitor 25 drops to the certain value, the sensing light source 22 will stop emitting light.
  • the discharge of the energy storage capacitor 25 makes the driving current drop faster, so that the The sensing light pulse is narrowed, thereby improving the sensing accuracy of the sensing device 10 .
  • the increase of the driving current generated by the driving circuit 20 of the above-mentioned embodiment of the present application increases. Therefore, according to the circuit principle, it can be determined that the pulse width of the driving current is narrowed and the rising amplitude of the driving current is increased. Furthermore, the sensing light source 22 is in the The pulse width of the sensing light pulse emitted under the driving of the driving current is narrow and the pulse amplitude can be increased. Accordingly, the precision of the sensing information of the sensing module 10 can be improved.
  • the processing module 13 obtains the depth map according to the electrical signal output by the receiving module 12, it is easier to find the peak information with the largest number of photons, so that the obtained depth information is accurate, and the sensing accuracy is obtained. improve.
  • the switch tube 23 is connected in parallel with a plurality of the sensing light sources 22 .
  • the inventor found through a lot of research that since the currents on the parallel branches are added, the current after the addition is larger, so even if a new design of the driving circuit is made, due to the multiple sensing The light sources 22 are connected in parallel and thus may not be possible when a larger drive current is required. The aforesaid main reason is also due to the adverse effects of parasitic inductance, parasitic resistance, and the like. Therefore, the inventor of the present application further proposes that by connecting a plurality of the sensing light sources 22 in series and increasing the driving voltage, the pulse width of the driving current can be narrowed and the amplitude of the driving current can be increased.
  • the switch tube 23 is connected in series with a light source group, and the light source group includes a plurality of the sensing light sources 22 connected in series. Since a plurality of the sensing light sources 22 are connected in series, the driving current in the series connection can be smaller than the driving current in the parallel connection. Correspondingly, it can be realized when a larger driving current is required.
  • the light source group may further include a plurality of the sensing light sources 22 connected in parallel. That is, the light source group includes a plurality of sensing light sources 22 connected in series and a plurality of sensing light sources 22 connected in parallel.
  • the driving circuit 20 can be reasonably configured to achieve the required sensing accuracy.
  • the operating principle of the driving circuit 20 may also be different from the driving principle of the above-mentioned embodiment.
  • the first switch 21 may also be in a conducting state when, for example, the switch tube 23 is conducting.
  • circuit structure of the driving circuit 20 is changed, and any suitable working principle based on the circuit structure of the driving circuit 20 of the present application shall fall within the protection scope of the present application. .
  • the first power supply 14 is, for example, an external power supply.
  • it can also be an internal power supply of the transmitting module 11 , which is not limited in this application.
  • the sensing light source 22 is connected between the first node N1 and the switch tube 23, and the switch tube 23 is further connected to ground.
  • the switch tube 23 is connected between the first node N1 and the sensing light source 22, and the sensing light source 22 is further connected to ground.
  • the inventor found that because the parasitic resistance and parasitic capacitance of the above-mentioned metal-oxide semiconductor field-effect transistor, etc. as the switch tube 23 are relatively large, the response speed is relatively slow, and the sensing device 10 is caused Sensing light pulses on the second level is difficult.
  • the inventor has further found through extensive research and analysis that selecting an avalanche photodiode, in particular, selecting a single photon avalanche diode (SPAD) as the switch tube 23 can make the sensing device 10 generate picoseconds. level sensing of light pulses becomes a reality.
  • avalanche photodiode in this application refers to the phenomenon that increasing the reverse bias voltage on the PN junction of the photodiode will produce an “avalanche” (that is, the photocurrent surges exponentially), so this Photodiodes are called “avalanche photodiodes”.
  • FIG. 3 is a schematic diagram of a partial circuit structure of the light emitting unit 110 according to the second embodiment of the present application.
  • the main differences between the light-emitting unit 110 of this embodiment and the light-emitting unit 110 of the above-mentioned embodiments are: first, the switch tube 23 in the driving circuit 20 of the light-emitting unit 110 of the embodiment is an avalanche photodiode; The driver circuit 20 further includes an excitation circuit 28 .
  • the same or similar parts of the light emitting unit 110 of the embodiment and the light emitting unit 110 of the first embodiment will not be repeated here.
  • the excitation circuit 28 is used to emit an excitation light beam, and the excitation light beam is used to trigger the avalanche photodiode to generate an avalanche.
  • control unit 27 is configured to control the working sequence of the excitation circuit 28 .
  • the excitation circuit 28 includes an excitation light source 280 and a second switch 282 .
  • the excitation light source 280 is connected in series with the second switch 282 .
  • the excitation light source 280 emits the excitation beam.
  • the excitation light source 280 does not emit the excitation beam.
  • the conduction of the second switch 282 is controlled by the control unit 27 .
  • the second switch 282 is, for example, but not limited to, a metal-oxide semiconductor field effect transistor (as shown in FIG. 2 ), a bipolar junction transistor and other conventional switch transistors.
  • the excitation light source is, for example, but not limited to, vertical cavity surface emitting laser VCSEL, LED, and the like.
  • the excitation light beam can be, for example, infrared light, ultraviolet light, visible light, etc., which is not limited in this application.
  • the excitation light source 280 and the second switch 282 are connected in series between the second power supply 15 and the ground.
  • the second power supply 15 may be an external power supply or an internal power supply of the transmitting module 11 , which is not limited in this application.
  • the excitation light source 280 and the second switch 282 may also be connected in series between the second node N2 and the ground.
  • the second node N2 is respectively connected to the first power supply 14 and the first switch 21 .
  • the control unit 27 When the sensing light source 22 needs to emit light, the control unit 27 first controls the first switch 21 to be turned on, and the first power supply 14 first switches the energy storage capacitor 25 through the first switch 21 that is turned on. Pre-charging is performed, and after the charging of the energy storage capacitor 25 is completed, the control unit 27 controls the first switch 21 to be turned off.
  • the control unit 27 controls the second switch 282 to be turned on, and the excitation light source 280 emits an excitation beam.
  • the avalanche photodiode receives the excitation beam and avalanches occur.
  • the storage capacitor 25 discharges the sensing light source 22 to trigger the sensing light source 22 to emit the sensing light pulse.
  • the energy storage capacitor 25 when the charging of the energy storage capacitor 25 is completed, it can bias the reverse clamping voltage across the avalanche photodiode to a preset avalanche voltage, and the preset avalanche voltage is greater than or equal to the avalanche photodiode critical avalanche voltage.
  • the critical avalanche voltage is the minimum voltage value at which the avalanche photodiode can generate avalanche.
  • the avalanche photodiode is preferably a single-photon avalanche photodiode.
  • the single-photon avalanche diode will avalanche immediately as long as it can receive one photon, and its response speed is very fast.
  • the parasitic resistance and parasitic capacitance of the single-photon avalanche diode during avalanche are very small, and the main part of the circuit loop where the sensing light source 22 is located is still the internal resistance of the sensing light source 22, so the design is good , the parasitic capacitance of the circuit loop is small, and the energy storage capacitor 25 can be discharged very quickly, so that it becomes a reality for the sensing light source 22 to generate a sensing light pulse of picosecond level.
  • the pulse width of the sensing light pulses emitted by the sensing light source 22 in this embodiment may be less than 1 nanosecond.
  • the pulse width of the sensed light pulse is, for example, but not limited to, 800 picoseconds, 500 picoseconds, or even shorter.
  • the driving circuit 20 stops generating the driving current. In this way, the sensing light source 22 can also stop emitting sensing light pulses.
  • the critical avalanche is, for example, 15V. It can be seen that in order to make the single-photon avalanche photodiode avalanche, the reverse voltage value is relatively high.
  • the energy storage capacitor 25 discharges, correspondingly, the reverse pinched voltage on the single-photon avalanche photodiode is continuously reduced, and can be reduced to below the critical avalanche voltage relatively quickly, so that the sensing light source 22 emits
  • the pulse width of the sensing light pulse can be narrow.
  • the avalanche photodiode can also be other suitable photodiodes, such as an avalanche photodiode (APD).
  • APD avalanche photodiode
  • a plurality of avalanche photodiodes are used in parallel, so that the response speed can be improved and the driving current can be increased.
  • the preset avalanche voltage is greater than the critical avalanche voltage. More preferably, the voltage difference between the two ranges, for example, from 5 volts to 10 volts. However, alternatively, in other implementations, the voltage difference between the preset avalanche voltage and the critical avalanche voltage may also be in other suitable ranges or values, which are not particularly limited in this application.
  • the single-photon avalanche diode avalanche is required, the single-photon avalanche diode is raised from below the critical avalanche voltage to the preset avalanche voltage within 4nS, and then the second switch 282 is closed in 1nS to trigger the single-photon avalanche diode avalanche.
  • the avalanche caused by dark current can only be generated in this 5nS time, which is an order of magnitude lower than the original 50nS period.
  • the single-photon avalanche diode includes a cathode P and an anode N, the anode N is connected to ground, the cathode P is connected to the sensing light source 22 , and the sensing light source 22 is further connected to the first node N1.
  • the cathode P is connected to the first node N1
  • the anode P is connected to the sensing light source 22 .
  • the sensing light source 22 is further connected to ground.
  • the driving circuit 20 further includes a light guide element 29 .
  • the excitation beam is conducted to the avalanche photodiode through the light guide element 29 .
  • the light guide element 29 can adjust the optical path of the excitation beam so that the excitation beam is received by the avalanche photodiode as much as possible, so as to ensure that the avalanche photodiode can avalanche immediately when avalanche is required.
  • the processing of the optical path of the excitation beam by the light guide element 29 can be any optical processing, such as reflection, refraction, scattering, etc., as long as enough excitation beams can be guided to the avalanche photodiode to ensure all
  • the avalanche-type photodiode can immediately generate an avalanche when an avalanche is required.
  • the second main improvement technical solution of the present application is: selecting an avalanche photodiode as the switch tube 23 in the circuit structure of the driving circuit 20, in particular, selecting a single-photon avalanche diode as the switch tube 23, which can make the
  • the driving circuit 20 generates a driving current with a narrow pulse width and a large instantaneous power, and further, drives the sensing light source 22 to generate a picosecond-level sensing light pulse, which greatly improves the sensing capability of the sensing device 10 precision.
  • the inventor found that the electronic components on the circuit board are generally connected by wires, and such wires are generally long and other characteristics, resulting in large parasitic inductance and parasitic resistance in the circuit loop, This has a serious impact on the rising speed and falling speed of the driving current in the circuit loop. Therefore, after a lot of creative labor analysis and research, the inventor proposes to integrate electronic components in the same bare chip (DIE), Therefore, the connection of wires can be reduced, thereby improving the sensing accuracy of the sensing device 10 .
  • DIE bare chip
  • FIG. 5 is a structural block diagram of the light emitting unit 110 according to the third embodiment of the present application.
  • the same or similar parts of the light-emitting unit 110 in this embodiment and the light-emitting unit 110 of the first embodiment described above are not repeated here, and the main difference is that the light-emitting unit 110 includes or is a light-emitting die.
  • the light-emitting die includes the sensing light source 22 and the switch tube 23 .
  • the sensing light source 22 and the switch tube 23 are integrated in the same light-emitting die, the connection wires between the sensing light source 22 and the switch tube 23 can be reduced, thereby reducing the adverse effects of parasitic inductance and parasitic resistance, etc. Accordingly, the sensing accuracy of the sensing device 10 can be improved.
  • the first switch 21 and/or the energy storage capacitor 25 are integrated in the light-emitting die, so that the connection wires in the loop circuit where the sensing light source 22 is located can be further reduced, thereby further reducing The adverse effects of parasitic inductance, parasitic resistance, etc., accordingly, the sensing accuracy of the sensing device 10 can be further improved.
  • control unit 27 is integrated in the light-emitting die, so that the sensing accuracy of the sensing device 10 can be further improved.
  • the volume of the emission module 11 is smaller.
  • the capacitance value of the storage capacitor 25 is, for example, but not limited to, greater than or equal to 10 pF and less than 1 nanofarad.
  • the capacitance value of the storage capacitor 25 is, for example, greater than or equal to 10 picofarads.
  • the capacitance value of the energy storage capacitor 25 is, for example, 500 picofarads.
  • the present application does not specifically limit the capacitance value of the energy storage capacitor 25 .
  • Those skilled in the art can correspondingly select the energy storage capacitor 25 with the corresponding capacitance value according to the technical content and actual needs described in this application.
  • the present application can also provide the light-emitting unit 110 of the modified embodiment as shown in FIG. 6 and FIG. 7 .
  • the control unit 27 controls whether a drive current is generated in the drive circuit 20 by controlling whether the switch tube 23 is turned on or not. Since the switch tube 23 and the sensing light source 22 are integrated in the same light-emitting die, adverse effects such as parasitic inductance can also be reduced to a certain extent, thereby improving the sensing accuracy of the sensing device 10 .
  • the control unit 27 may also be integrated in the light-emitting die.
  • the driving circuit 20 in FIG. 6 does not include the storage capacitor 25 and the first switch 21 .
  • the driving circuit 20 of the light-emitting unit 110 of the embodiment shown in FIG. 7 further includes the storage capacitor 25 . Therefore, the energy storage capacitor 25 can immediately provide power to the sensing light source 22 to emit light when the switch tube 23 is turned on.
  • the storage capacitor 25 is integrated in the light-emitting die or disposed outside the light-emitting die.
  • FIG. 8 is a schematic top-view structural diagram of the light emitting unit 110 according to the fourth embodiment of the present application.
  • Fig. 9 is a schematic cross-sectional view taken along line IX-IX' of Fig. 8 .
  • the same or similar parts of the light-emitting unit 110 in this embodiment and the light-emitting unit 110 of the second embodiment described above are not repeated here, and the main difference is that the light-emitting unit 110 includes or is a light-emitting die.
  • the light-emitting unit 110 includes a light-emitting die.
  • the light-emitting die includes the sensing light source 22 and the switch tube 23 .
  • the sensing light source 22 and the switch tube 23 are integrated in the same light-emitting die, the connection wires between the sensing light source 22 and the switch tube 23 can be reduced, thereby reducing the adverse effects of parasitic inductance and parasitic resistance, etc. Accordingly, the sensing accuracy of the sensing device 10 can be improved.
  • the first switch 21 and/or the energy storage capacitor 25 are integrated in the light-emitting die, so that the connection wires in the loop circuit where the sensing light source 22 is located can be further reduced, thereby further reducing The adverse effects of parasitic inductance, parasitic resistance, etc., accordingly, the sensing accuracy of the sensing device 10 can be further improved.
  • control unit 27 is integrated in the light-emitting die, so that the sensing accuracy of the sensing device 10 can be further improved.
  • part or all of the excitation circuit 28 is integrated in the light-emitting die.
  • the excitation light source 280 is integrated in the light-emitting die, the light exit side of the excitation light source 280 and the light exit side of the sensing light source 22 are located on the same side, for example.
  • the driving circuit 20 includes the first switch S1
  • the electronic components such as the light source 20 are integrated in the same light-emitting die.
  • the light-emitting unit 110 of this embodiment can not only further reduce the adverse effects of parasitic inductance and parasitic resistance, etc., but also greatly improve the sensitivity of the sensing device 10 .
  • the measurement accuracy is improved, and the volume of the emission module 11 is smaller.
  • the light emitting unit 110 of this embodiment can generate a sensing light pulse with a narrower pulse width, for example, but not limited to, the pulse width of the sensing light pulse is 100 picoseconds, 200 picoseconds, 300 picoseconds, and the like.
  • the capacitance value of the storage capacitor 25 is, for example, but not limited to, greater than or equal to 10 picofarads and less than 1 nanofarad.
  • the capacitance value of the storage capacitor 25 is, for example, greater than or equal to 10 picofarads.
  • the capacitance value of the energy storage capacitor 25 is, for example, 500 picofarads.
  • the present application does not specifically limit the capacitance value of the energy storage capacitor 25 .
  • Those skilled in the art can correspondingly select the energy storage capacitor 25 with the corresponding capacitance value according to the technical content and actual needs described in this application.
  • the light guide element 29 is located outside the light-emitting die and is not integrated in the light-emitting die.
  • the light guide element 29 may also be integrated inside the light emitting die.
  • the light guide element 29 is, for example, disposed above the light-emitting side of the light-emitting die, and above between the excitation light source 280 and the switch tube 23 .
  • the light guide element 29 includes a first opening (not shown) and a second opening 293 (not shown).
  • the first opening 291 faces the light-emitting direction of the excitation light source 280
  • the second opening 293 faces the light-receiving direction of the switch tube 23 . Therefore, the excitation light beam emitted from the excitation light source 280 enters the light guide element 29 through the first opening 291 , is transmitted from the inside of the light guide element 29 and is output to the switch through the second opening 293 tube 23.
  • the light guide element 29 can block external ambient light from incident on the switch tube 23 , so as to prevent ambient light from causing avalanche on the switch tube 23 .
  • the third main improvement technical solution of the present application is: integrating electronic components such as the sensing light source 22 and the switch tube 23 in the same bare chip, thereby, the adverse effects of parasitic inductance, parasitic resistance, etc. can be reduced to a large extent, and the The purpose is to further improve the sensing accuracy of the sensing device 10 .
  • FIG. 10 is a schematic top-view structure diagram of the light emitting unit 110 according to the fifth embodiment of the present application.
  • Fig. 11 is a schematic cross-sectional view taken along line XI-XI' of Fig. 10 .
  • the light-emitting unit 110 of this embodiment is the same or similar to the light-emitting unit 110 of the first embodiment and will not be repeated.
  • the main difference of the light-emitting unit 110 of this embodiment is that the light-emitting unit 110 includes a light-emitting die 110A and switch die 110B.
  • the light emitting die 110A includes the sensing light source 22 .
  • the switch die 110B includes the switch tube 23 .
  • An area on one side surface of the light-emitting die 110A for emitting sensing light pulses is defined as a light-emitting area G, and a non-emitting area is defined as a non-light-emitting area F.
  • the switch die 110B is disposed above the non-light-emitting area F, for example, disposed between the non-light-emitting area F and the modulation element 112 . Further optionally, the switch die 110B is inverted above the non-light-emitting area F, and is electrically connected vertically and vertically with the light-emitting die 110A.
  • the light-emitting die 110A and the switch die 110B are electrically connected vertically up and down through metal bumps T, for example, but not limited thereto. Therefore, parasitic inductance, parasitic resistance, etc. can also be reduced to a certain extent, thereby improving the sensing accuracy of the sensing device 10 .
  • the metal bumps T are made of, for example, gold, copper and other conductive materials with small internal resistance.
  • the first switch 21 and/or the energy storage capacitor 25 and/or the control unit 27 are integrated in the light-emitting die 110A or the switch die 110B, or are arranged in the light-emitting die 110A and all of them. outside the switch die 110B.
  • the first switch 21 and/or the energy storage capacitor 25 and/or the control unit 27 are integrated in the switch die 110B.
  • each electronic component in FIG. 10 and FIG. 11 is only an example, and other suitable setting relationships are also possible, and are not limited to the positions of the electronic components shown in FIG. 10 and FIG. 11 . relation.
  • FIG. 12 is a schematic top-view structural diagram of the light emitting unit 110 according to the sixth embodiment of the present application.
  • Fig. 13 is a schematic cross-sectional view taken along line XIII-XIII' of Fig. 12 .
  • the light-emitting unit 110 of this embodiment and the light-emitting unit 110 of the second embodiment are not repeated for the same or similar points.
  • the main difference of the light-emitting unit 110 of this embodiment is that the light-emitting unit 110 includes a light-emitting die 110A and switch die 110B.
  • the light emitting die 110A includes the sensing light source 22 and the excitation light source 280 .
  • the switch die 110B includes a switch tube 23 .
  • the area of the side surface of the light-emitting die 110A for emitting the sensing light pulse is defined as the first light-emitting area M1
  • the area of the side surface of the light-emitting die 110A for emitting the excitation beam is defined as the second light-emitting area M2
  • the first light emitting area M1 and the second light emitting area M2 are located on the same side.
  • the switch die 110B is inverted on the second light emitting area M2 for receiving the excitation light beam emitted by the excitation light source 280 .
  • the switch die 110B and the light emitting die 110A are vertically connected, for example, up and down.
  • the switch die 110B and the light-emitting die 110A are vertically connected up and down through metal bumps T, for example.
  • the first switch 21 and/or the second switch 282 and/or the energy storage capacitor 25 and/or the control unit 27 are integrated in the light-emitting die 110A or the switch die 110B Or set outside these two dies.
  • the light-emitting unit 110 of this embodiment can also reduce the adverse effects of parasitic inductance and parasitic capacitance to a certain extent, and improve the sensing accuracy.
  • each electronic component shown in FIG. 12 and FIG. 13 is only an example, and other suitable setting relationships are also possible, and are not limited to the positions of the electronic components shown in FIG. 12 and FIG. 13 . relation.
  • the switch tube 23 may also be other suitable types of switch tubes, which are not limited in this application.
  • FIG. 14 is a structural block diagram of an electronic device according to an embodiment of the present application.
  • the electronic device 1 includes the sensing device 10 .
  • the electronic device 1 includes, but is not limited to, smartphones, tablet computers, computers, notebook computers, desktop computers, smart wearable devices, smart door locks, in-vehicle electronic devices, medical, aviation, etc. that have 3D information sensing function requirements. equipment or device.

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Abstract

本申请提供了一种驱动电路、发光单元、发射模组、感测装置和电子设备。所述驱动电路包括：第一开关，连接在第—供电电源与第一节点之间；单光子雪崩二极管，与所述感测光源串联连接在所述第一节点与地之间；储能电容，连接在所述第一节点与地之间；其中，所述储能电容用于通过导通的所述第一开关接收来自所述第—供电电源的电压，用于储存电能且将所述单光子雪崩二极管的反向电压预先偏置到预设雪崩电压，所述储能电容进一步用于在所述单光子雪崩二极管发生雪崩时对所述感测光源放电，触发所述感测光源发射所述感测光脉冲。所述发光单元、发射模组、感测装置和电子设备包括所述驱动电路。

Description

驱动电路、发光单元、发射模组、感测装置和电子设备 技术领域
本申请涉及光电传感技术领域，并且更具体地，涉及飞行时间装置中的发射模组、飞行时间装置和电子设备。
背景技术
飞行时间(Time of Flight，TOF)装置是通过测量光脉冲在空间中的飞行时间来计算物体的距离，或者说，深度，由于其具有感测距离长、测量范围大等优点被广泛应用于消费电子、无人驾驶、AR/VR等领域。
TOF装置中包括发射模块和接收模块。所述发射模块用于向目标空间发射光脉冲以提供照明。接收模块用于接收从外部对象返回的光脉冲，并根据光脉冲由发射到接收所需要的时间计算物体的距离。
然而，现有的TOF装置的感测精度较低，无法满足更高精度场景的需求。
发明内容
本申请实施方式旨在至少解决现有技术中存在的技术问题之一。为此，本申请实施方式需要提供一种驱动电路、发光单元、发射模组、感测装置和电子设备。
首先，本申请提供了一种驱动电路，用于驱动感测光源发射感测光脉冲，所述感测光脉冲用于照射到外部对象以感测相关信息，所述驱动电路包括：
第一开关，连接在第一供电电源与第一节点之间；
单光子雪崩二极管，与所述感测光源串联连接在所述第一节点与地之间；和
储能电容，连接在所述第一节点与地之间；
其中，所述储能电容用于通过导通的所述第一开关接收来自所述第一供电电源的电压，用于储存电能且将所述单光子雪崩二极管的反向电压预先偏置到预设雪崩电压，所述储能电容进一步用于在所述单光子雪崩二极管发生雪崩时对所述感测光源放电，触发所述感测光源发射所述感测光脉冲。
在某些实施方式中，所述预设雪崩电压大于或等于所述单光子雪崩二极管的临界雪崩电压，所述临界雪崩电压为所述单光子雪崩二极管能够发生雪崩的最小电压值。
在某些实施方式中，所述预设雪崩电压大于所述临界雪崩电压，且二者的压差范围为5伏至10伏。
在某些实施方式中，所述第一开关在所述单光子雪崩二极管发生雪崩期间处于断开状态。
在某些实施方式中，所述第一开关的导通与否由一控制单元进行控制。
在某些实施方式中，所述单光子雪崩二极管用于接收来自激发电路的激发光束，所述激发光束用于触发所述单光子雪崩二极管发生雪崩。
在某些实施方式中，所述激发光束通过导光元件从所述激发电路传导到所述单光子雪崩二极管上。
在某些实施方式中，所述激发电路包括激发光源和第二开关，所述激发光源和所述第二开关串联连接，所述激发光源用于在所述第二开关导通时发射所述激发光束。
在某些实施方式中，所述激发光源和所述第二开关串联连接在第二供电电源与地之间，当所述第二开关导通时，所述激发光源用于接收来自所述第二供电电源的电能而发射所述激发光束；或者，所述激发光源和所述第二开关串联连接在第二节点与地之间，所述第二节点进一步与所述第一供电电源和所述第一开关分别连接，当所述第二开关导通时，所述激发光源用于接收来自所述第一供电电源的电能而发射所述激发光束。
在某些实施方式中，所述控制单元用于控制所述第二开关的导通与否。
在某些实施方式中，当需要所述感测光源发射所述感测光脉冲时，所述控制单元先控制所述第一开关闭合，所述储能电容通过闭合的所述第一开关接收来自所述第一供电电源的电压进行预充电，当所述储能电容充完电后，所述控制单元控制所述第一开关断开，所述控制单元进一步控制所述第二开关闭合，所述激发电路发射所述激发光束，以触发所述单光子雪崩二极管发生雪崩，所述感测光源在所述单光子雪崩二极管发生雪崩时发射所述感测光脉冲。
在某些实施方式中，当所述储能电容放电到所述单光子雪崩二极管两端的反向夹压小于所述临界雪崩电压时，所述感测光源停止发射感测光脉冲； 或者，当流过所述感测光源的电流小于所述感测光源能够发光的阈值电流时，所述感测光源停止发射感测光脉冲。
在某些实施方式中，所述单光子雪崩二极管包括阴极和阳极；所述阴极与所述感测光源连接，所述阳极与地连接，所述感测光源进一步与所述第一节点连接；或者，所述阴极与所述第一节点连接，所述阳极与所述感测光源连接，所述感测光源进一步与地连接。
在某些实施方式中，所述储能电容的电容值大于等于10皮法且小于等于1纳法。
在某些实施方式中，所述感测光脉冲用于感测外部对象的深度信息或/和感测外部对象的接近或/和感测距离。
在某些实施方式中，所述单光子雪崩二极管与所述感测光源所在的串联支路上包括多个相串联的所述感测光源。
在某些实施方式中，所述感测光源和/或所述激发光源为垂直腔面激光发射器。
在某些实施方式中，所述激发光源与所述感测光源的出光侧为同一侧。
在某些实施方式中，所述感测光源集成在一发光裸片中，所述单光子雪崩二极管集成在一开关裸片中。
在某些实施方式中，所述开一开关和/或所述储能电容集成在所述开关裸片中，或者，所述开一开关和/或所述储能电容集成在所述发光裸片中。
在某些实施方式中，所述感测光源和所述激发光源集成在一发光裸片中，所述单光子雪崩二极管集成在一开关裸片中。
在某些实施方式中，所述第一开关和/或所述第二开关和/或所述储能电容集成在所述开关裸片中，或者，所述第一开关和/或所述第二开关和/或所述储能电容集成在所述发光裸片中。
在某些实施方式中，所述发光裸片包括第一发光区域和第二发光区域，其中，所述第一发光区域用于出射所述感测光脉冲，所述第二发光区域用于出射所述激发光束，所述开关裸片设置在所述发光裸片的第二发光区域上方，用于接收所述激发光束。
在某些实施方式中，所述开关裸片包括接收面，用于接收激发光束，所述开关裸片倒扣在所述第二发光区域上方，所述接收面面对所述第二发光区域。
在某些实施方式中，所述开关裸片和所述发光裸片通过金属凸点进行堆叠垂直连接
在某些实施方式中，在所述驱动电路中，至少所述感测光源和所述单光子雪崩二极管集成在一发光裸片中，
在某些实施方式中，所述驱动电路为飞行时间装置中的发射模组中的驱动电路，用于驱动所述感测光源发射感测光脉冲到外部对象，所述飞行时间装置中的接收装置用于接收由外部对象返回的感测光脉冲，以获取相关的感测信息。
本申请还提供一种发光单元，包括上述中任意一项所述的驱动电路和感测光源，所述驱动电路用于驱动所述感测光源发出感测光脉冲，所述感测光脉冲用于获得外部对像的深度信息或/和接近信息或/和距离信息。
本申请还提供一种发射模组，包括所述的发光单元。
在某些实施方式中，所述发射模组进一步包括调制元件，设置在所述感测光源的出光方向上，用于对所述感测光源出射的感测光脉冲进行调制。
在某些实施方式中，所述调制元件包括匀光片，用于对所述感测光源出射的光束进行均匀化处理，以形成泛光光束；或者，所述调制元件包括光学衍射元件，用于对所述感测光源出射的光束进行复制扩展，以形成散斑图案。
在某些实施方式中，所述发射模组进一步包括导光元件，设置在所述感测光源与所述调制元件之间，所述导光元件用于将所述激发光束传输到所述单光子雪崩二极管上。
本申请还提供一种感测装置，包括发射模组和接收模组，所述发射模组用于发射感测光脉冲到外部对象，所述接收模组用于接收由外部对象返回的感测光脉冲并转换接收到的感测光脉冲为相应的电信号，以获得外部对象的相关感测信息，其中，所述发射装置如为上述中任意一项所述的发射模组。
在某些实施方式中，所述感测装置为飞行时间装置，用于感测外部对象的深度信息或/和接近信息。
本申请还提供一种电子设备，包括上述中任意一项所述的感测装置。
本申请中的驱动电路中设置有与感测光源相串联的单光子雪崩二极管，由于所述单光子雪崩二极管只要接收到一个光子即可发生雪崩，响应速度特别快，且具有导通内阻很小等优点，因此，所述感测光源发出的感测光脉冲的脉冲宽度能够较窄，从而能够提高感测精度。相应地，包括所述驱动电路 的发光单元、发射模组、感测装置、和电子设备的感测精度较高。
附图说明
图1示出了本申请实施例的感测装置的示意性结构图。
图2为本申请第一实施例的发光单元的部分电路结构示意图。
图3为本申请第二实施例的发光单元的部分电路结构示意图。
图4为本申请又一变更实施例的发光单元的部分电路结构示意图。
图5为本申请第三实施例的发光单元的结构框图。
图6为本申请又一变更实施例的发光单元的部分电路结构示意图。
图7为本申请又一变更实施例的发光单元的部分电路结构示意图。
图8为本申请第四实施例的发光单元的俯视结构示意图。
图9为图8沿剖线IX-IX’的剖面示意图。
图10为本申请第五实施例的发光单元的俯视结构示意图。
图11为图10沿剖线XI-XI’的剖面示意图。
图12为本申请第六实施例的发光单元的俯视结构示意图。
图13为图12沿剖线XIII-XIII’的剖面示意图。
图14为本申请一实施例的电子设备的结构框图。
具体实施方式
下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。
应注意到：相似的标号和字母在下面的附图中表示类似项，因此，一旦某一项在一个附图中被定义，则在随后的附图中不需要对其进行进一步定义和解释。进一步地，所描述的特征、结构可以以任何合适的方式结合在一个或更多实施方式中。
在本申请的描述中，需要理解的是，术语″第一″、″第二″仅用于描述的目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上， 除非另有明确具体的限定。
在下文的描述中，提供许多具体细节以便能够充分理解本申请的实施方式。然而，本领域技术人员应意识到，即使没有所述特定细节中的一个或更多，或者采用其它的结构、组元等，也可以实践本申请的技术方案。在其它情况下，不详细示出或描述公知结构或者操作以避免模糊本申请之重点。
需要提前说明的是，在本申请中，一个裸片(Single Die)是指从一个晶圆(Wafer)上切割下来而未进行封装的产品。一个芯片(Single Chip)是指封装有一个或多个裸片(Die)的产品。另外，本申请中的节点(Node)是指两条或两条以上支路的连接点。
发明人通过大量的创造性劳动研究与分析发现，发射模组发射到外部空间的感测光脉冲的脉冲宽度越窄，则深度信息的检测精度越高。而要达到越窄的脉冲宽度，所述发射模组中用于驱动感测光源发光的驱动电流的上升时间和下降时间都要快。然而，所述发射模组中用于产生所述驱动电流的驱动电路中的电子元器件以及所述感测光源之间都是分立的元器件，通过导线等进行电连接，从而不可避免存在着较大的寄生电感、寄生电容、寄生电阻等，另外，电子元器件本身，例如常规的开关管，通常为具有三个端子的晶体管开关，因寄生电容、寄生电阻较大等原因而导通响应速度和关断相应速度都较慢，这些不利因素就导致流过所述感测光源的驱动电流无法实现上升时间和下降时间都要快，进而使得所述感测光源发射的感测光脉冲的脉冲宽度无法实现较窄。因此，如何实现具有脉冲宽度较窄的感测光脉冲是一项亟需解决的技术问题。
发明人进一步通过大量的创造性劳动研究与分析，专研出从如下至少四个主要方面分别单独或相结合的方式来解决上述技术问题。
第一，设计新的驱动电路；
第二，选择新的电子元器件；
第三，通过元件集成的方式，将多个电子元器件集成在同一个裸片中；
第四，通过元件集成的方式，将多个电子元器件集成在两个裸片中，且两个裸片之间通过垂直堆叠的方式进行电连接；
本申请上述的任意一种方式或几种方式相结合，均可以减小感测光源所在的电子回路中的寄生电感、寄生电阻等，从而能够减小感测光脉冲的脉冲宽度，达到提高感测精度的目的。
下面，通过不同的实施例来对上述四个主要方面进行具体说明。
请参阅图1，图1示出了本申请实施例的感测装置的示意性结构图。所述感测装置10用于发出感测光脉冲到外部对象，并接收由外部对象返回的感测光脉冲，转换所述感测光脉冲为相应的电信号，所述电信号用于获得相应的感测信息。例如但不局限地，所述电信号用于获得外部对象的接近信息、深度信息、或距离信息等中的一种或几种。其中，所述深度信息例如用于3D建模，人脸识别，自动驾驶，即时定位和地图构建(simultaneous localization and mapping，SLAM)等领域，本申请对此不作限定。所述接近信息例如用于判断是否有物体接近等。
可选的，所述感测装置10例如为TOF装置。然，所述感测装置10也可为其它合适类型的装置，用于感测接近信息或/和深度信息等、甚至是感测其它合适的信息，本申请对此并不做限定。
可选的，所述TOF装置例如为直接飞行时间(Direct Time Of Flight，D-TOF)装置。所述D-TOF装置是基于直接飞行时间检测原理来执行深度信息感测。所述D-TOF装置通过直接计算发射模组发射的感测光脉冲与接收模组接收的感测光脉冲之间的时间差来获得外部对象的深度信息。然，可替代地，所述TOF装置例如也可以为间接飞行时间(Indirect Time Of Flight，I-TOF)装置。所述I-TOF装置是基于间接飞行时间检测原理来执行深度信息感测。所述I-TOF装置通过计算发射模组发射的感测光脉冲与接收模组接收的感测光脉冲之间的相位差来获得外部对象的深度信息。
在本申请下面的实施例中，主要以所述感测装置10为D-TOF装置为例说明。但可以理解地，本申请所保护的技术方案也可以扩展到其它合适类型的感测装置10上。
具体地，如图1所示，所述感测装置10包括发射模组11、接收模组12和处理模块13。所述发射模组11用于发射感测光脉冲201至所述外部对象20的空间，至少部分发射的感测光脉冲201从所述外部对象20返回后形成感测光脉冲202，所述感测光脉冲202中的至少部分被所述接收模组12接收。该返回的感测光脉冲202中例如携带有所述外部对象20的深度信息(或者说，景深信息)。
所述发射模组11包括：发光单元110和调制元件112。所述发光单元110用于发射感测光脉冲。所述调制元件112用于对所述发光单元110发射的感 测光脉冲进行调制，以形成感测所需的感测光脉冲201，并将所述感测光脉冲201投射至外部对象20。可选的，所述发射模组11发射的感测光脉冲201例如但不局限为散斑图案或泛光光束。
可选的，在一些实施例中，所述调制元件112例如为扩散片(Diffuser)或匀光片，用于对所述发光单元110发射的感测光脉冲进行均匀化处理，形成泛光光束。
可选的，在另一些实施例中，所述调制元件112例如为衍射光学元件(Diffractive Optical Elements，DOE)，用于对所述发光单元110发射的感测光脉冲进行复制扩展，形成散斑图案。所述散斑图案可以是规则排布的，也可以是非规则排布或随机排布等。
通过所述DOE对发光单元110发射的感测光脉冲进行复制，则向外部对象20发射的感测光脉冲是由多个复制的感测光脉冲组成，有利于扩大感测装置10的视场角和感测光脉冲的数量，提高成像效果。
可选的，在又一些实施例中，所述调制元件112也可为其它合适的光束调制元件，例如微透镜阵列等，本申请对此并不做特别限定。本领域的技术人员可根据实际需要选择对应的调制元件112对感测光脉冲进行调制以得到所需要的感测光脉冲201。
可选的，在某些实施例中，所述调制元件112也可被省略。
可选的，在一些实施例中，所述发射模组11还可包括其它合适的元件，例如透镜单元，设置在所述发光单元110和所述调制元件112之间，用于将所述发光单元110发射的感测光脉冲进行准直或会聚后传输至所述调制元件112。
应理解，本申请实施例并不具体限定发光单元110发射的感测光脉冲的波段范围，例如，可以是红外光，紫外光，可见光等。
在一些实施例中，所述发光单元110可以包括单个感测光源22(参见图2)或多个感测光源22。该多个感测光源22例如可以是规则排布或非规则排布的光源阵列。以所述感测光源22为垂直腔面发射激光器(Vertical-Cavity Surface-Emitting Laser，简称VCSEL，又译垂直共振腔面射型激光)形式的光源为例，所述发光单元110可以包括半导体衬底以及多个排列在所述半导体衬底上的VCSEL光源所组成的VCSEL阵列裸片。
可选的，所述感测光源22例如可以为红外发光二极管(Light Emitting  Diode，LED)、VCSEL、激光器(Laser diode，LD)、法布里泊罗(Fabry Perot，FP)激光器、分布式反馈(Distribute Feedback，DFB)激光器以及电吸收调制激光器(Electro-absorption Modulated Laser，EML)等形式的光源，本申请实施例对此不做限定。
在一些实施例中，所述接收模组12包括图像传感器。所述图像传感器例如包括由多个像素单元组成的像素阵列120，所述像素阵列120用于接收从所述外部对象20返回的感测光脉冲202以获取相关感测信息，例如但不局限地，获取所述外部对象20的深度信息。
在本申请实施例中，单个像素单元接收感测光脉冲202用于获得所述外部对象20的一个深度信息。在一些实施例中，所述单个像素单元可以包括一个像素，例如，单光子雪崩光电二极管(SPAD)或其它合适的光电转换元件，在另一些实施例中，所述单个像素单元包括多个像素，例如，可以为由多个SPAD组成的阵列像素。
可选的，所述接收模组12还包括与所述图像传感器连接的信号放大器、时数转换器(TDC)、模数转换器(ADC)等器件中的一种或多种组成的读出电路，本申请并不限于此。可选的，所述读出电路中的部分或全部也可集成在所述图像传感器中。
可选的，所述接收模组12还包括透镜单元121，用于接收从所述外部对象20返回的感测光脉冲202，并将所述感测光脉冲202进行准直或会聚后传输至所述多个像素单元。
所述处理模块13例如用于根据所述感测光脉冲201和所述感测光脉冲202之间的时间差确定所述外部对象20的深度信息，从而能够实现所述感测装置10对所述外部对象20的深度成像功能。然，可变更地，在其它实施例中，所述处理模块13也可根据所述感测光脉冲202并基于其它合适的检测原理来获得相关的感测信息，而并不局限为根据所述感测光脉冲201和所述感测光脉冲202之间的时间差来确定相关感测信息。
可选的，所述处理模块13可以为所述感测装置10的处理模块，也可以为包括感测装置10的电子设备的处理模块，例如，电子设备的主控模块，本申请实施例不作限定。
请参阅图2，图2为本申请第一实施例的发光单元110的部分电路结构示意图。所述发光单元110包括驱动电路20和所述感测光源22。所述驱动 电路20与所述感测光源22电连接，用于驱动所述感测光源22发射所述感测光脉冲。在图2中，以驱动电路20驱动一个感测光源22发出感测光脉冲为例进行说明。
可选的，所述驱动电路20包括第一开关21、开关管23、储能电容25、和控制单元27。所述第一开关21连接在第一供电电源14与第一节点N1之间。所述开关管23与所述感测光源22串联连接在所述第一节点N1与地之间。所述储能电容25连接在所述第一节点N1与地之间。
所述控制单元27用于控制所述第一开关21和所述开关管23的导通与否。所述储能电容23用于通过导通的第一开关21接收来自所述第一供电电源14的电压，进行储能。当所述开关管23导通时，所述储能电容23对所述感测光源22进行放电，为所述感测光源22发射所述感测光脉冲提供电能。
可选的，所述第一开关21在所述开关管23导通期间处于断开状态。进一步可选的，所述第一开关21与所述开关管23分时导通。
在本实施例中，所述驱动电路20驱动所述感测光源22发光的工作原理如下。
所述控制单元27先控制所述第一开关21导通，所述第一供电电源14的电压通过导通的所述第一开关21给所述储能电容25进行预充电。当所述储能电容25充电完毕后，所述控制单元27控制所述第一开关21断开。当需要所述感测光源22发射感测光脉冲时，所述控制单元27控制所述开关管23导通，所述储能电容25对所述感测光源22进行放电，所述感测光源22发射所述感测光脉冲。当所述储能电容25上的电能下降到一定值时，所述感测光源22停止发射感测光脉冲。例如，当所述储能电容25上的电能下降到所述驱动电路20中产生的驱动电流小于所述感测光源22工作的阈值电流时，所述感测光源22停止发射感测光脉冲。
在本实施例中，所述开关管23为具有至少三个端子的晶体管开关，例如为金属-氧化物半导体场效应晶体管(如图2中所示)、双极结型三极管等常规的开关管。然，所述开关管23也可为其它合适的具有至少三个端子的晶体管开关，例如响应速度较快的砷化镓晶体管、或氮化镓晶体管等。
在本实施例中，由于所述第一供电电源14与所述感测光源22之间增加设置了所述第一开关21，而所述第一开关21在所述驱动电路20驱动所述感测光源22发光期间是断开的，因此，所述第一供电电源14与感测光源22之 间的较长的连接导线上的寄生电感、寄生电阻、寄生电容等在所述感测光源22发光时不会计入所述驱动电路20中，从而可以减小对所述驱动电路20产生的驱动电流的不利影响，进而可以加快驱动电流的上升速度和下降速度。
进一步地，在本实施例中，通过新增储能电容25，利用所述存储电容25提供电能给所述感测光源22进行发光，随着所述储能电容25不断放电，所述驱动电流先升高到某一最大电流值后会不断下降，因此，当所述储能电容25上的电能下降到所述一定值后，所述感测光源22会停止发光。相较于现有技术中利用控制单元控制开关管关断来控制驱动电流关断的方式，本申请实施例中通过储能电容25放电的方式使得驱动电流的下降速度会变快，从而能够使得感测光脉冲变窄，进而提高感测装置10的感测精度。
由上述分析内容可见，相较于传统上通过控制单元控制常规开关管的导通与否进而来控制驱动电路是否产生驱动电流的方式，本申请上述实施例的驱动电路20产生的驱动电流的上升速度和下降速度会比较快，从而，根据电路原理可以确定，所述驱动电流的脉冲宽度变窄且所述驱动电流的上升幅度变大可以成为现实，进而，所述感测光源22在所述驱动电流驱动下发射的所述感测光脉冲的脉冲宽度较窄且脉冲幅度能够变大。相应地，所述感测模组10的感测信息的精度可以得到提高。
例如但不限制地，所述处理模块13根据由接收模组12输出的电信号来获得深度图时，更容易找到光子数最多的峰值信息，从而其获得的深度信息较准，感测精度得到提高。
通常地，所述开关管23与多个所述感测光源22相并联。然而，发明人通过大量的研究发现，由于并联支路上电流是相加的，相加之后的电流是较大的，如此，即使对驱动电路做出新的设计，但由于多个所述感测光源22相并联，从而，当需要更大的驱动电流的时候就可能实现不了。前述的主因还是因为寄生电感、寄生电阻等的不利影响。因此，本申请的发明人进一步提出，通过串联多个所述感测光源22且提高驱动电压的方式，从而达到实现驱动电流的脉冲宽度较窄且驱动电流的幅度能够变大。
例如，可选的，在图2中，对于开关管23，其与一个光源组相串联，所述光源组包括相串联的多个所述感测光源22。由于多个所述感测光源22是相串联的，从而，串联时的驱动电流相对上述并联时的驱动电流可以变小。相应地，当需要更大的驱动电流的时候就可以实现了。
进一步可选的，所述光源组还可以包括相并联的多个所述感测光源22。即，所述光源组中既有串联的多个感测光源22，也有并联的多个感测光源22。
对于本领域的技术人员而言，其根据本申请记载的技术内容，可以对所述驱动电路20进行合理配置，实现所需的感测精度。
可变更地，在其它实施例中，所述驱动电路20的工作原理也可以与上述实施例的驱动原理不同。例如但不限于，所述第一开关21例如在所述开关管23导通的时候也可以处于导通的状态。
本申请的主要改进技术方案之一在于：所述驱动电路20的电路结构的改变，基于本申请的驱动电路20的电路结构而做出的任何合适的工作原理均应落入本申请的保护范围。
可选的，所述第一供电电源14例如为外部电源，当然，也可为发射模组11的内部电源，本申请对此并不做限定。
可选的，所述感测光源22连接在所述第一节点N1与所述开关管23之间，所述开关管23进一步连接至地。或者，所述开关管23连接在所述第一节点N1与所述感测光源22之间，所述感测光源22进一步连接至地。
发明人通过大量的创造性劳动研究与分析发现，由于上述金属-氧化物半导体场效应晶体管等作为开关管23的寄生电阻、寄生电容比较大，响应速度较慢，导致所述感测装置10产生皮秒级的感测光脉冲较难。发明人进一步通过大量的研究与分析发现，选择雪崩型光电二极管，尤其地，例如选择单光子雪崩二极管(Single Photon Avalanche Diode，SPAD)作为所述开关管23，能够使得感测装置10产生皮秒级的感测光脉冲成为现实。
需要说明的是，在本申请中的雪崩型光电二极管，是指加大光电二极管的PN结上的反向偏压会产生“雪崩”(即光电流成倍地激增)的现象，因此这种光电二极管被称为“雪崩型光电二极管”。
请参阅图3，图3为本申请第二实施例的发光单元110的部分电路结构示意图。此实施例的发光单元110与上述实施例的发光单元110的主要区别在于：第一，所述实施例的发光单元110的驱动电路20中的开关管23为雪崩型光电二极管；第二，所述驱动电路20进一步包括激发电路28。为了清楚简洁，所述实施例的发光单元110与第一实施例的发光单元110的相同或相近之处在此不再赘述。
所述激发电路28用于发射激发光束，所述激发光束用于触发所述雪崩型 光电二极管发生雪崩。
可选的，所述控制单元27用于控制所述激发电路28的工作时序。
可选的，所述激发电路28包括激发光源280和第二开关282。所述激发光源280与所述第二开关282串联连接。当所述第二开关282导通时，所述激发光源280发出所述激发光束。当所述第二开关282断开时，所述激发光源280不发出所述激发光束。
所述第二开关282的导通与否由所述控制单元27控制。
可选的，所述第二开关282例如但不局限于为金属-氧化物半导体场效应晶体管(如图2中所示)、双极结型三极管等常规的开关管等。
所述激发光源例如但不限制为垂直腔面发射激光器VCSEL、LED等。所述激发光束例如可以是红外光，紫外光，可见光等，本申请对此并不做限定。
可选的，在本实施例中，所述激发光源280与所述第二开关282串联连接于第二供电电源15与地之间。所述第二供电电源15可以是外部电源，也可以是所述发射模组11的内部电源，本申请对此并不做局限。
然，可变更地，在其它实施例中，如图4所示，所述激发光源280和所述第二开关282也可以串联连接在第二节点N2与地之间。所述第二节点N2分别与所述第一供电电源14和所述第一开关21相连接。
当需要所述感测光源22发光时，所述控制单元27先控制所述第一开关21导通，所述第一供电电源14通过导通的第一开关21先对所述储能电容25进行预充电，当所述储能电容25充电完成之后，所述控制单元27控制所述第一开关21断开。当需要所述感测光源22发光时，所述控制单元27控制所述第二开关282导通，所述激发光源280发射激发光束。所述雪崩型光电二极管接收所述激发光束并发生雪崩。所述储能电容25对所述感测光源22进行放电，触发所述感测光源22发射所述感测光脉冲。
其中，所述储能电容25充电完成时，其可以将所述雪崩型光电二极管两端的反向夹压偏置到预设雪崩电压，所述预设雪崩电压大于或等于所述雪崩型光电二极管的临界雪崩电压。所述临界雪崩电压为所述雪崩型光电二极管能够发生雪崩的最小电压值。
发明人通过大量的创造性劳动研究与分析发现，所述雪崩光电二极管优选为单光子雪崩光电二极管。所述单光子雪崩二极管只要能接收到一个光子 就会立即发生雪崩，其响应速度非常快。且，所述单光子雪崩二极管雪崩时的寄生电阻、寄生电容等都是非常小的，所述感测光源22所在电路回路中的主要部分还是感测光源22的内阻，因此，设计得好，电路回路的寄生电容小，所述储能电容25可以非常快速地放电，从而使得感测光源22产生皮秒级的感测光脉冲成为现实。
本实施例的感测光源22发出的感测光脉冲的脉冲宽度可以小于1纳秒。例如但不限制地，所述感测光脉冲的脉冲宽度例如但不限制为800皮秒、500皮秒、或甚至更短。
在本实施例中，当所述储能电容25不断放电，所述单光子雪崩型光电二极管上的反向电压小于所述临界雪崩电压时，所述驱动电路20则停止产生驱动电流。如此，所述感测光源22也可以停止发射感测光脉冲。
可选的，所述临界雪崩例如是15V。可见，要使得所述单光子雪崩型光电二极管发生雪崩，反向电压值较高，因此，相较于现有技术中利用控制单元关断常规的开关管的方式，本实施例中利用所述储能电容25放电，相应地，所述单光子雪崩型光电二极管上的反向夹压不断降低，且能相对较快降低到所述临界雪崩电压以下，从而，所述感测光源22发射的感测光脉冲的脉冲宽度能够较窄。
在图3和图4的实例中，在第一节点N1与地之间，仅示出一个单光子雪崩二极管23与感测光源22相串联。然，可变更地，在其它实施例中，也可以为多个相并联的单光子雪崩二极管23与感测光源22相串联。从而，可以提高开关管23的总体相应速度，且增大驱动电流。
然，可变更地，在某些实施方式中，所述雪崩光电二极管也可为其它合适的光电二极管，例如为雪崩光电二极管(Avalanche Photo Diode，APD)。当所述开关管23为所述雪崩光电二极管时，例如是多个雪崩光电二极管并联使用，如此，可以提高响应速度，且增大驱动电流。
优选的，所述预设雪崩电压大于所述临界雪崩电压。更优选的，二者之间的压差范围例如为5伏至10伏。然，可变更地，在其它实施中，所述预设雪崩电压与所述临界雪崩电压之间的压差也可为其它合适的范围或数值，本申请对此并不做特别限制。
通常地，暗电流会导致所述单光子雪崩二极管发生雪崩，因此，要减少这种非受控雪崩，以免造成对感测的影响。因此，实际产品中，要保证暗电 流致所述单光子雪崩二极管的雪崩概率达到毫秒级以上。相应地，按照50ns一个周期，可以保证两万次雪崩才有一次非受控雪崩。另外，就是快速充电，可以减少非受控雪崩。比如当需要单光子雪崩二极管雪崩时，在4nS内把单光子雪崩二极管从临界雪崩电压以下提升到预设雪崩电压，然后在1nS闭合第二开关282使其触发单光子雪崩二极管雪崩。整个过程5nS结束，那么由暗电流引起的雪崩也只能在这5nS时间产生，比起原来的50nS的周期，足足降低了一个数量级。
在图3所示的实施例中，所述单光子雪崩二极管包括阴极P与阳极N，所述阳极N与地连接，所述阴极P与所述感测光源22连接，所述感测光源22进一步连接至所述第一节点N1。然，可变更地，在其它实施例中，所述阴极P与所述第一节点N1连接，所述阳极P与所述感测光源22连接。所述感测光源22进一步连接至地。
可选的，所述驱动电路20进一步包括导光元件29。所述激发光束通过所述导光元件29传导至所述雪崩型光电二极管上。
所述导光元件29可以调整所述激发光束的光路以使得所述激发光束尽可能多的被所述雪崩型光电二极管接收，从而确保所述雪崩型光电二极管在需要雪崩时能立刻发生雪崩。
所述导光元件29对所述激发光束的光路的处理可以为任一光学处理，例如，反射，折射，散射等，只要能够实现将足够多的激发光束引导至雪崩型光电二极管上，确保所述雪崩型光电二极管在需要雪崩时能立刻发生雪崩即可。
本申请的主要改进技术方案之二在于：选择雪崩型光电二极管作为所述驱动电路20的电路结构中的开关管23，尤其地，选择单光子雪崩二极管作为所述开关管23，能够使得所述驱动电路20产生脉宽较窄且瞬时功率较大的驱动电流，进而，驱动所述感测光源22产生皮秒级的感测光脉冲，较大程度上提高所述感测装置10的感测精度。
发明人通过大量的研究与分析发现，在电路板上的电子元器件之间一般通过导线相连，而这种导线一般具有较长等特点，导致电路回路中的寄生电感和寄生电阻都较大，由此对电路回路中的驱动电流的上升速度和下降速度的影响较为严重，为此，发明人通过大量的创造性劳动分析与研究之后，提出将电子元器件集成在同一裸片(DIE)中，从而可以减少导线的连接，进而提 高感测装置10的感测精度。
请参阅图5，图5为本申请第三实施例的发光单元110的结构框图。本实施例中的发光单元110与上述第一实施例的发光单元110的相同或相近部分在此不再赘述，不同之处主要在于，所述发光单元110包括或为发光裸片。
所述发光裸片包括所述感测光源22与所述开关管23。
由于感测光源22与所述开关管23集成在同一发光裸片中，从而，可以减小感测光源22与开关管23之间的连接导线，进而减少寄生电感、寄生电阻等的不利影响，相应地，所述感测装置10的感测精度可以得到提高。
可选的，所述第一开关21和/或所述储能电容25集成在所述发光裸片中，从而，能进一步减小所述感测光源22所在回路电路中的连接导线，进一步减少寄生电感、寄生电阻等的不利影响，相应地，所述感测装置10的感测精度可以得到进一步提高。
可选的，所述控制单元27集成在所述发光裸片中，从而，所述感测装置10的感测精度可以得到进一步提高。
由于所述驱动电路20与所述感测光源20等电子元器件集成在同一发光裸片中，从而，所述发射模组11的体积更小。
当所述储能电容25集成在所述发光裸片中时，所述储能电容25的电容值例如但不限于为大于等于10皮法且小于1纳法。当所述储能电容25设置在所述发光裸片的外部时，所述储能电容25的电容值例如是大于等于10皮法。具体地，所述储能电容25的电容值例如为500皮法。然，本申请对储能电容25的电容值并不做具体限定。本领域的技术人员根据本申请记载的技术内容以及实际需求，可对应选择相应电容值的储能电容25。
对于电子元器件集成在同一发光裸片的方式，本申请还可以提供如图6和图7所示变更实施例的发光单元110。具体地，对于图6所示实施例的发光单元110，所述控制单元27通过控制开关管23的导通与否来控制所述驱动电路20中是否产生驱动电流。由于所述开关管23和所述感测光源22集成在同一发光裸片中，也可以在一定程度上减小寄生电感等的不利影响，从而提高感测装置10的感测精度。可选的，所述控制单元27也可集成在所述发光裸片中。图6中的驱动电路20并不包括所述储能电容25和所述第一开关21。
对于图7所示变更实施例的发光单元110，相较于图6所示实施例的发 光单元110，图7所示实施例的发光单元110的驱动电路20进一步包括所述储能电容25。从而，所述储能电容25可以在所述开关管23导通时能够立即提供电能给所述感测光源22发光。所述储能电容25集成在所述发光裸片中或设置在所述发光裸片之外。
请一并参阅图3、图8与图9，图8为本申请第四实施例的发光单元110的俯视结构示意图。图9为图8沿剖线IX-IX’的剖面示意图。本实施例中的发光单元110与上述第二实施例的发光单元110的相同或相近部分在此不再赘述，不同之处主要在于，所述发光单元110包括或为发光裸片。
可选的，所述发光单元110包括发光裸片。所述发光裸片包括所述感测光源22与所述开关管23。
由于感测光源22与所述开关管23集成在同一发光裸片中，从而，可以减小感测光源22与开关管23之间的连接导线，进而减少寄生电感、寄生电阻等的不利影响，相应地，所述感测装置10的感测精度可以得到提高。
可选的，所述第一开关21和/或所述储能电容25集成在所述发光裸片中，从而，能进一步减小所述感测光源22所在回路电路中的连接导线，进一步减少寄生电感、寄生电阻等的不利影响，相应地，所述感测装置10的感测精度可以得到进一步提高。
可选的，所述控制单元27集成在所述发光裸片中，从而，所述感测装置10的感测精度可以得到进一步提高。
可选的，所述激发电路28中的部分或全部集成在所述发光裸片中。当所述激发光源280集成在所述发光裸片中时，所述激发光源280的出光侧与所述感测光源22的出光侧例如位于同一侧。
对于此实施例的发光单元110，由于所述驱动电路20包括所述第一开关S1、所述储能电容25，尤其包括所述单光子雪崩二极管，且所述驱动电路20与所述感测光源20等电子元器件集成在同一发光裸片中，此实施例的发光单元110不仅能够进一步较大程度上降低寄生电感、寄生电阻等的不利影响，较大程度上提高感测装置10的感测精度，而且，所述发射模组11的体积更小。本实施例的发光单元110例如可以产生脉冲宽度更窄的感测光脉冲，例如但不限制地，所述感测光脉冲的脉冲宽度为100皮秒、200皮秒、300皮秒等。
当所述储能电容25集成在所述发光裸片中时，所述储能电容25的电容 值例如但不限于为大于等于10皮法且小于1纳法。当所述储能电容25设置在所述发光裸片的外部时，所述储能电容25的电容值例如是大于等于10皮法。具体地，所述储能电容25的电容值例如为500皮法。然，本申请对储能电容25的电容值并不做具体限定。本领域的技术人员根据本申请记载的技术内容以及实际需求，可对应选择相应电容值的储能电容25。
可选的，所述导光元件29位于所述发光裸片的外部，并不集成在所述发光裸片中。然，可变更地，在某些实施方式中，所述导光元件29也可集成在所述发光裸片的内部。
在本实施例中，所述导光元件29例如设置在所述发光裸片的出光侧上方，且位于所述激发光源280与所述开关管23之间的上方。可选的，所述导光元件29包括第一开孔(图未示)和第二开孔293(图未示)。其中，所述第一开孔291正对所述激发光源280的出光方向，所述第二开孔293正对所述开关管23的收光方向。从而，所述激发光源280出射的激发光束通过所述第一开孔291进入所述导光元件29，从所述导光元件29内部传输后通过所述第二开孔293输出到所述开关管23上。
可选的，所述导光元件29能够遮挡外界环境光入射到所述开关管23上，防止环境光造成所述开关管23发生雪崩。
需要说明的是，图8与图9中的各电子元器件的位置关系只是一种示例，也可为其它合适的设置关系，并不局限于图8与图9所示的电子元器件的位置关系。
本申请的主要改进技术方案之三在于：将感测光源22与开关管23等电子元器件集成在同一裸片中，从而，能够较大程度上降低寄生电感、寄生电阻等的不利影响，达到进一步提高感测装置10的感测精度的目的。
请一并参阅图2、图10、与图11，图10为本申请第五实施例的发光单元110的俯视结构示意图。图11为图10沿剖线XI-XI’的剖面示意图。此实施例的发光单元110与第一实施例的发光单元110的相同或相近之处不再赘述，此实施例的发光单元110的主要不同之处在于，所述发光单元110包括发光裸片110A和开关裸片110B。所述发光裸片110A包括所述感测光源22。所述开关裸片110B包括所述开关管23。
定义所述发光裸片110A的一侧表面用于发出感测光脉冲的区域为发光区域G，而非发光的区域为非发光区域F。可选的，所述开关裸片110B设置 在所述非发光区域F的上方，例如设置在所述非发光区域F与所述调制元件112之间。进一步可选的，所述开关裸片110B倒扣在所述非发光区域F上方，与所述发光裸片110A上下垂直电连接。例如但不限制地，所述发光裸片110A与所述开关裸片110B例如但不限于通过金属凸点T实现上下垂直电连接。从而，也可以在一定程度上减小寄生电感、寄生电阻等，进而提高所述感测装置10的感测精度。其中，所述金属凸点T例如由金、铜等内阻较小的导电材料制成。
所述第一开关21和/或所述储能电容25和/或所述控制单元27集成在所述发光裸片110A或所述开关裸片110B中或设置在所述发光裸片110A与所述开关裸片110B之外。
优选的，所述第一开关21和/或所述储能电容25和/或所述控制单元27集成在所述开关裸片110B中。
需要说明的是，图10与图11中的各电子元器件的位置关系只是一种示例，也可为其它合适的设置关系，并不局限于图10与图11所示的电子元器件的位置关系。
类似地，对于图6和图7的实施例，也可以采用本实施的技术思想，在此不再赘述。
请参阅图3、图12与图13，图12为本申请第六实施例的发光单元110的俯视结构示意图。图13为图12沿剖线XIII-XIII’的剖面示意图。此实施例的发光单元110与第二实施例的发光单元110的相同或相近之处不再赘述，此实施例的发光单元110的主要不同之处在于，所述发光单元110包括发光裸片110A和开关裸片110B。所述发光裸片110A包括所述感测光源22和所述激发光源280。所述开关裸片110B包括开关管23。
定义所述发光裸片110A用于发出感测光脉冲的一侧表面的区域为第一发光区域M1，定义所述发光裸片110A用于发出激发光束的一侧表面的区域为第二发光区域M2，所述第一发光区域M1与所述第二发光区域M2位于同一侧。
可选的，所述开关裸片110B倒扣在所述第二发光区域M2上，用于接收所述激发光源280发出的激发光束。所述开关裸片110B与所述发光裸片110A例如为上下垂直连接。可选的，所述开关裸片110B与所述发光裸片110A例如为通过金属凸点T实现上下垂直连接。
可选的，所述第一开关21和/或所述第二开关282和/或所述储能电容25和/或所述控制单元27集成在所述发光裸片110A或开关裸片110B中或设置在这两颗裸片之外。
本实施的发光单元110也可以在一定程度上降低寄生电感、寄生电容的不利影响，提高感测精度。
需要说明的是，图12与图13中的各电子元器件的位置关系只是一种示例，也可为其它合适的设置关系，并不局限于图12与图13所示的电子元器件的位置关系。
在上述各实施中，所述开关管23也可为其它合适类型的开关管，本申请对此并不做限定。
请参阅图14，图14为本申请一实施例的电子设备的结构框图。所述电子设备1包括所述感测装置10。所述电子设备1例如包括但不限于智能手机、平板电脑、计算机、笔记本电脑、台式机电脑、智能可穿戴设备、智能门锁、车载电子设备、医疗、航空等有3D信息感测功能需求的设备或装置。
以上所述，仅为本申请的具体实施方式，但本申请的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本申请揭露的技术范围内，可轻易想到变化或替换，都应涵盖在本申请的保护范围之内。因此，本申请的保护范围应以所述权利要求的保护范围为准。

Claims (35)

  1. 一种驱动电路，用于驱动感测光源发射感测光脉冲，所述感测光脉冲用于照射到外部对象以感测相关信息，其特征在于，所述驱动电路包括：
    第一开关，连接在第一供电电源与第一节点之间；
    单光子雪崩二极管，与所述感测光源串联连接在所述第一节点与地之间；和
    储能电容，连接在所述第一节点与地之间；
    其中，所述储能电容用于通过导通的所述第一开关接收来自所述第一供电电源的电压，用于储存电能且将所述单光子雪崩二极管的反向电压预先偏置到预设雪崩电压，所述储能电容进一步用于在所述单光子雪崩二极管发生雪崩时对所述感测光源放电，触发所述感测光源发射所述感测光脉冲。
  2. 如权利要求1所述的驱动电路，其特征在于，所述预设雪崩电压大于或等于所述单光子雪崩二极管的临界雪崩电压，所述临界雪崩电压为所述单光子雪崩二极管能够发生雪崩的最小电压值。
  3. 如权利要求2所述的驱动电路，其特征在于，所述预设雪崩电压大于所述临界雪崩电压，且二者的压差范围为5伏至10伏。
  4. 如权利要求2所述的驱动电路，其特征在于，所述第一开关在所述单光子雪崩二极管发生雪崩期间处于断开状态。
  5. 如权利要求2所述的驱动电路，其特征在于，所述第一开关的导通与否由一控制单元进行控制。
  6. 如权利要求5所述的驱动电路，其特征在于，所述单光子雪崩二极管用于接收来自激发电路的激发光束，所述激发光束用于触发所述单光子雪崩二极管发生雪崩。
  7. 如权利要求6所述的驱动电路，其特征在于，所述激发光束通过导光元件从所述激发电路传导到所述单光子雪崩二极管上。
  8. 如权利要求6所述的驱动电路，其特征在于，所述激发电路包括激发光源和第二开关，所述激发光源和所述第二开关串联连接，所述激发光源用于在所述第二开关导通时发射所述激发光束。
  9. 如权利要求8所述的驱动电路，其特征在于，所述激发光源和所述第二开关串联连接在第二供电电源与地之间，当所述第二开关导通时，所述激发光源用于接收来自所述第二供电电源的电能而发射所述激发光束；或者， 所述激发光源和所述第二开关串联连接在第二节点与地之间，所述第二节点进一步与所述第一供电电源和所述第一开关分别连接，当所述第二开关导通时，所述激发光源用于接收来自所述第一供电电源的电能而发射所述激发光束。
  10. 如权利要求8所述的驱动电路，其特征在于，所述控制单元用于控制所述第二开关的导通与否。
  11. 如权利要求10所述的驱动电路，其特征在于，当需要所述感测光源发射所述感测光脉冲时，所述控制单元先控制所述第一开关闭合，所述储能电容通过闭合的所述第一开关接收来自所述第一供电电源的电压进行预充电，当所述储能电容充完电后，所述控制单元控制所述第一开关断开，所述控制单元进一步控制所述第二开关闭合，所述激发电路发射所述激发光束，以触发所述单光子雪崩二极管发生雪崩，所述感测光源在所述单光子雪崩二极管发生雪崩时发射所述感测光脉冲。
  12. 如权利要求1或11所述的驱动电路，其特征在于，当所述储能电容放电到所述单光子雪崩二极管两端的反向夹压小于所述临界雪崩电压时，所述感测光源停止发射感测光脉冲；或者，当流过所述感测光源的电流小于所述感测光源能够发光的阈值电流时，所述感测光源停止发射感测光脉冲。
  13. 如权利要求1所述的驱动电路，其特征在于，所述单光子雪崩二极管包括阴极和阳极；所述阴极与所述感测光源连接，所述阳极与地连接，所述感测光源进一步与所述第一节点连接；或者，所述阴极与所述第一节点连接，所述阳极与所述感测光源连接，所述感测光源进一步与地连接。
  14. 如权利要求1所述的驱动电路，其特征在于，所述储能电容的电容值大于等于10皮法且小于等于1纳法。
  15. 如权利要求1所述的驱动电路，其特征在于，所述感测光脉冲用于感测外部对象的深度信息或/和感测外部对象的接近或/和感测距离。
  16. 如权利要求1所述的驱动电路，其特征在于，所述单光子雪崩二极管与所述感测光源所在的串联支路上包括多个相串联的所述感测光源。
  17. 如权利要求8所述的驱动电路，其特征在于，所述感测光源和/或所述激发光源为垂直腔面激光发射器。
  18. 如权利要求8所述的驱动电路，其特征在于，所述激发光源与所述感测光源的出光侧为同一侧。
  19. 如权利要求1所述的驱动电路，其特征在于，所述感测光源集成在一发光裸片中，所述单光子雪崩二极管集成在一开关裸片中。
  20. 如权利要求19所述的驱动电路，其特征在于，所述开一开关和/或所述储能电容集成在所述开关裸片中，或者，所述开一开关和/或所述储能电容集成在所述发光裸片中。
  21. 如权利要求8所述的驱动电路，其特征在于，所述感测光源和所述激发光源集成在一发光裸片中，所述单光子雪崩二极管集成在一开关裸片中。
  22. 如权利要求21所述的驱动电路，其特征在于，所述第一开关和/或所述第二开关和/或所述储能电容集成在所述开关裸片中，或者，所述第一开关和/或所述第二开关和/或所述储能电容集成在所述发光裸片中。
  23. 如权利要求21或22所述的驱动电路，其特征在于，所述发光裸片包括第一发光区域和第二发光区域，其中，所述第一发光区域用于出射所述感测光脉冲，所述第二发光区域用于出射所述激发光束，所述开关裸片设置在所述发光裸片的第二发光区域上方，用于接收所述激发光束。
  24. 如权利要求23所述的驱动电路，其特征在于，所述开关裸片包括接收面，用于接收激发光束，所述开关裸片倒扣在所述第二发光区域上方，所述接收面面对所述第二发光区域。
  25. 如权利要求24所述的驱动电路，其特征在于，所述开关裸片和所述发光裸片通过金属凸点进行堆叠垂直连接。
  26. 如权利要求1所述的驱动电路，其特征在于，在所述驱动电路中，至少所述感测光源和所述单光子雪崩二极管集成在一发光裸片中，
  27. 如权利要求1所述的驱动电路，其特征在于，所述驱动电路为飞行时间装置中的发射模组中的驱动电路，用于驱动所述感测光源发射感测光脉冲到外部对象，所述飞行时间装置中的接收装置用于接收由外部对象返回的感测光脉冲，以获取相关的感测信息。
  28. 一种发光单元，其特征在于，包括如权利要求1至27中任意一项所述的驱动电路和感测光源，所述驱动电路用于驱动所述感测光源发出感测光脉冲，所述感测光脉冲用于获得外部对像的深度信息或/和接近信息或/和距离信息。
  29. 一种发射模组，其特征在于，包括如权利要求28所述的发光单元。
  30. 如权利要求29所述的发射模组，其特征在于，所述发射模组进一步 包括调制元件，设置在所述感测光源的出光方向上，用于对所述感测光源出射的感测光脉冲进行调制。
  31. 如权利要求30所述的发射模组，其特征在于，所述调制元件包括匀光片，用于对所述感测光源出射的光束进行均匀化处理，以形成泛光光束；或者，所述调制元件包括光学衍射元件，用于对所述感测光源出射的光束进行复制扩展，以形成散斑图案。
  32. 如权利要求29所述的发射模组，其特征在于，所述发射模组进一步包括导光元件，设置在所述感测光源与所述调制元件之间，所述导光元件用于将激发所述单光子雪崩二极管发生雪崩的激发光束传输到所述单光子雪崩二极管上。
  33. 一种感测装置，其特征在于，包括发射模组和接收模组，所述发射模组用于发射感测光脉冲到外部对象，所述接收模组用于接收由外部对象返回的感测光脉冲并转换接收到的感测光脉冲为相应的电信号，以获得外部对象的相关感测信息，其中，所述发射装置如为权利要求29至32中任意一项所述的发射模组。
  34. 如权利要求33所述的感测装置，其特征在于，所述感测装置为飞行时间装置，用于感测外部对象的深度信息或/和接近信息或/和距离信息。
  35. 一种电子设备，其特征在于，包括权利要求33或34所述的感测装置。
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CN112859095A (zh) * 2021-02-07 2021-05-28 深圳阜时科技有限公司 飞行时间装置的发射模组、飞行时间装置和电子设备
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