WO2022153151A1 - 発光デバイスの製造装置 - Google Patents

発光デバイスの製造装置 Download PDF

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Publication number
WO2022153151A1
WO2022153151A1 PCT/IB2022/050107 IB2022050107W WO2022153151A1 WO 2022153151 A1 WO2022153151 A1 WO 2022153151A1 IB 2022050107 W IB2022050107 W IB 2022050107W WO 2022153151 A1 WO2022153151 A1 WO 2022153151A1
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Prior art keywords
cluster
load lock
lock chamber
substrate
transfer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/IB2022/050107
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English (en)
French (fr)
Japanese (ja)
Inventor
江口晋吾
安達広樹
岡崎健一
山根靖正
楠本直人
吉住健輔
山崎舜平
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Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2022574865A priority Critical patent/JPWO2022153151A1/ja
Priority to US18/260,841 priority patent/US20240057464A1/en
Publication of WO2022153151A1 publication Critical patent/WO2022153151A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0452—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers
    • H10P72/0454—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers surrounding a central transfer chamber
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
    • B65G—TRANSPORT OR STORAGE DEVICES, e.g. CONVEYORS FOR LOADING OR TIPPING, SHOP CONVEYOR SYSTEMS OR PNEUMATIC TUBE CONVEYORS
    • B65G49/00—Conveying systems characterised by their application for specified purposes not otherwise provided for
    • B65G49/05—Conveying systems characterised by their application for specified purposes not otherwise provided for for fragile or damageable materials or articles
    • B65G49/07—Conveying systems characterised by their application for specified purposes not otherwise provided for for fragile or damageable materials or articles for semiconductor wafers Not used, see H10P72/00
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • C23C14/566—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases using a load-lock chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/02—Details
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/811—Controlling the atmosphere during processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0461—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the presence of two or more transfer chambers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0466—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the construction of the load-lock chamber
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
    • H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
    • H10K71/233—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers by photolithographic etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7602—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a robot blade or gripped by a gripper for conveyance
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/78—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using vacuum or suction, e.g. Bernoulli chucks

Definitions

  • One aspect of the present invention relates to a manufacturing apparatus and a manufacturing method of a light emitting device.
  • One aspect of the present invention is not limited to the above technical fields.
  • the technical field of one aspect of the invention disclosed in the present specification and the like relates to a product, a method, or a manufacturing method.
  • one aspect of the invention relates to a process, machine, manufacture, or composition of matter. Therefore, more specifically, the technical fields of one aspect of the present invention disclosed in the present specification include semiconductor devices, display devices, liquid crystal display devices, light emitting devices, lighting devices, power storage devices, storage devices, imaging devices, and the like. An operating method or a method of manufacturing them can be given as an example.
  • Devices that require high-definition display panels include, for example, smartphones, tablet terminals, and notebook computers.
  • stationary display devices such as television devices and monitor devices are also required to have higher definition as the resolution is increased.
  • a device requiring the highest definition for example, there is a device for virtual reality (VR: Virtual Reality) or augmented reality (AR: Augmented Reality).
  • VR Virtual Reality
  • AR Augmented Reality
  • a display device applicable to a display panel a liquid crystal display device, a light emitting device including a light emitting element such as an organic EL (Electro Luminescence) element or a light emitting diode (LED: Light Emitting Diode), and an electrophoresis method are typically used.
  • a light emitting device including a light emitting element such as an organic EL (Electro Luminescence) element or a light emitting diode (LED: Light Emitting Diode)
  • LED Light Emitting Diode
  • electrophoresis method examples include electronic papers that display by means of.
  • an organic EL element has a structure in which a layer containing a luminescent organic compound is sandwiched between a pair of electrodes. By applying a voltage to this device, light emission can be obtained from a luminescent organic compound. Since the display device to which such an organic EL element is applied does not require a backlight, which is required for a liquid crystal display device or the like, a thin, lightweight, high-contrast, and low-power consumption display device can be realized. For example, an example of a display device using an organic EL element is described in Patent Document 1.
  • an organic EL display device capable of full-color display, a configuration in which a white light emitting element and a color filter are combined and a configuration in which RGB light emitting elements are formed on the same surface are known.
  • the latter configuration is ideal, and at present, in the production of small and medium-sized panels, light-emitting materials are painted separately using a metal mask or the like.
  • the alignment accuracy is low, so that the area occupied by the light emitting element in the pixel must be reduced, and it is difficult to increase the aperture ratio.
  • a compact high-definition display is desired for AR and VR applications. Since the display for AR and VR is installed in a device such as a spectacle type or goggles type having a small volume, it is preferable to have a narrow frame. Therefore, it is preferable that the driver of the pixel circuit or the like is provided at the lower part of the pixel circuit.
  • one of the objects of the present invention is to provide a light emitting device manufacturing apparatus capable of continuously performing the steps from the formation of the light emitting element to the sealing without opening to the atmosphere.
  • Another object of the present invention is to provide an apparatus for manufacturing a light emitting device capable of forming a light emitting element without using a metal mask.
  • one of the purposes is to provide a method for manufacturing a light emitting device.
  • One aspect of the present invention relates to an apparatus for manufacturing a light emitting device.
  • a first aspect of the present invention includes first to eleventh clusters and first to tenth load lock chambers, wherein the first cluster is a second cluster and a first load lock chamber.
  • the second cluster is connected via the third cluster and the second load lock chamber
  • the third cluster is connected via the fourth cluster and the third load lock chamber.
  • the fourth cluster is connected to the fifth cluster via the fourth load lock chamber
  • the fifth cluster is connected to the sixth cluster via the fifth load lock chamber
  • the sixth cluster is connected.
  • the clusters are connected to the 7th cluster via the 6th load lock chamber
  • the 7th cluster is connected to the 8th cluster through the 7th load lock chamber
  • the 8th cluster is connected to the 8th cluster.
  • the ninth cluster is connected through the eighth load lock chamber, the ninth cluster is connected through the tenth cluster and the ninth load lock chamber, and the tenth cluster is the eleventh cluster.
  • the first cluster, the third cluster, the fourth cluster, the sixth cluster, the seventh cluster, the ninth cluster, and the eleventh cluster are connected to each other through the tenth load lock chamber. Controlled by decompression, the second cluster, fifth cluster, eighth cluster, and tenth cluster are controlled by an inert gas atmosphere, and the first cluster, fourth cluster, and seventh cluster are controlled.
  • Each has a first transfer device and a plurality of film forming devices, and the third cluster, the sixth cluster, and the ninth cluster have a second transfer device, an etching device, and ashing, respectively.
  • the second cluster, the fifth cluster, and the eighth cluster each have a third transport device and a plurality of devices for performing a lithography process, and the tenth cluster has a third device.
  • the eleventh cluster has a fifth transfer device and a plurality of film forming devices, and the first transfer device is a portion for fixing the substrate. It is an apparatus for manufacturing a light emitting device that has the above and can invert the substrate by rotating the part.
  • a second aspect of the present invention includes first to eleventh clusters and first to tenth load lock chambers, wherein the first cluster has a second cluster and a first load lock chamber.
  • the second cluster is connected through the third cluster and the second load lock chamber, and the third cluster is connected through the fourth cluster and the third load lock chamber.
  • the fourth cluster is connected to the fifth cluster via the fourth load lock chamber, the fifth cluster is connected to the sixth cluster through the fifth load lock chamber, and the sixth cluster is connected.
  • the clusters are connected to the 7th cluster via the 6th load lock chamber, the 7th cluster is connected to the 8th cluster through the 7th load lock chamber, and the 8th cluster is connected to the 8th cluster.
  • the ninth cluster is connected through the eighth load lock chamber, the ninth cluster is connected through the tenth cluster and the ninth load lock chamber, and the tenth cluster is the eleventh cluster.
  • the first cluster, the third cluster, the fourth cluster, the sixth cluster, the seventh cluster, the ninth cluster, and the eleventh cluster are connected to each other through the tenth load lock chamber.
  • the second cluster, the fifth cluster, the eighth cluster, and the tenth cluster are controlled by the depressurization, and the first cluster, the fourth cluster, and the seventh cluster are controlled by the inert gas atmosphere.
  • Each has a first transfer device, a substrate transfer device, and a plurality of film forming devices, and the third cluster, the sixth cluster, and the ninth cluster are each with the second transfer device.
  • the second cluster, the fifth cluster, and the eighth cluster each have a third transfer device and a plurality of devices for performing a lithography process.
  • the ten clusters have a fourth transfer device and an etching device
  • the eleventh cluster has a fifth transfer device and a plurality of film forming devices
  • the substrate transfer device is a substrate transfer device. It has a stage, a sixth transfer device, and a seventh transfer device, and a mask jig can be installed on the stage.
  • the first transfer device is a mask jig on which a substrate is attached.
  • the sixth transport device can flip the substrate on the mask jig and attach it
  • the seventh transport device removes and flips the substrate attached to the mask jig. It is a manufacturing equipment that can be used.
  • the substrate transfer device is provided with a camera
  • the sixth transfer device is provided with a substrate rotation mechanism
  • the substrate is aligned and masked using the camera and the substrate rotation mechanism. It can be attached to a jig.
  • a plurality of substrates can be attached to the mask jig.
  • the twelfth cluster is via the first cluster and the eleventh load lock chamber.
  • the twelfth cluster can have an inert gas atmosphere, and the twelfth cluster can have a cleaning device and a baking device.
  • the twelfth cluster may have a load chamber, and the eleventh cluster may have an unload chamber.
  • the thirteenth cluster has a third cluster and a third load lock.
  • the thirteenth cluster is connected through the fourth cluster and the twelfth load lock chamber
  • the fourteenth cluster is connected through the sixth cluster and the sixth load lock chamber.
  • the 14th cluster is connected to the 7th cluster via the 13th load lock chamber
  • the 13th cluster and the 14th cluster are controlled by an inert gas atmosphere
  • the 13th cluster and The fourteenth cluster may have a cleaning device and a baking device.
  • the film forming apparatus is preferably one or more selected from a vapor deposition apparatus, a sputtering apparatus, a CVD apparatus, and an ALD apparatus.
  • the etching apparatus included in the third cluster, the sixth cluster, and the ninth cluster is preferably a dry etching apparatus.
  • the etching apparatus included in the tenth cluster is preferably a wet etching apparatus.
  • a coating device As a plurality of devices for performing the lithography process, a coating device, an exposure device, a developing device, and a baking device can be provided. Alternatively, a coating device and a nanoimprint device can be provided as a plurality of devices for performing the lithography process.
  • a silicon wafer can be used as the substrate. Further, each of the film forming apparatus is provided with an alignment mechanism and a mask jig, and the alignment mechanism can bring the substrate and the mask jig into close contact with each other.
  • a light emitting device manufacturing apparatus capable of continuously performing the steps from the formation of the light emitting element to the sealing without opening to the atmosphere.
  • an apparatus for manufacturing a light emitting device capable of forming a light emitting element without using a metal mask.
  • a method for manufacturing a light emitting device can be provided.
  • FIG. 1 is a block diagram illustrating a manufacturing apparatus.
  • FIG. 2 is a diagram illustrating a manufacturing apparatus.
  • FIG. 3 is a diagram illustrating a manufacturing apparatus.
  • FIG. 4 is a diagram illustrating a manufacturing apparatus.
  • FIG. 5 is a diagram illustrating a manufacturing apparatus.
  • FIG. 6 is a block diagram illustrating a manufacturing apparatus.
  • FIG. 7 is a diagram illustrating a manufacturing apparatus.
  • FIG. 8 is a diagram illustrating a manufacturing apparatus.
  • FIG. 9 is a block diagram illustrating a manufacturing apparatus.
  • FIG. 10 is a diagram illustrating a manufacturing apparatus.
  • FIG. 11 is a diagram illustrating a manufacturing apparatus.
  • 12A to 12C are diagrams for explaining the transfer of the substrate.
  • 13A to 13C are views for explaining the transfer of the substrate.
  • FIG. 12A to 12C are diagrams for explaining the transfer of the substrate.
  • FIG. 14A is a diagram illustrating a vacuum process apparatus.
  • FIG. 14B is a diagram illustrating the loading of the substrate into the vacuum process apparatus.
  • 15A to 15C are diagrams showing an example of the number of display devices taken per substrate.
  • FIG. 16 is a block diagram illustrating a manufacturing apparatus.
  • FIG. 17 is a diagram illustrating a manufacturing apparatus.
  • FIG. 18 is a diagram illustrating a manufacturing apparatus.
  • FIG. 19 is a diagram illustrating a manufacturing apparatus.
  • FIG. 20 is a diagram illustrating a manufacturing apparatus.
  • FIG. 21 is a block diagram illustrating a manufacturing apparatus.
  • FIG. 22 is a diagram illustrating a manufacturing apparatus.
  • FIG. 23 is a diagram illustrating a manufacturing apparatus.
  • 24A to 24C are diagrams for explaining the transfer of the substrate.
  • FIGS. 25A to 25C are diagrams for explaining the transfer of the substrate.
  • 26A and 26B are diagrams illustrating the transfer of the substrate.
  • FIG. 27A is a diagram illustrating a cross section of the transport device and the mask jig.
  • FIG. 27B is a diagram illustrating a cross section of the mask jig.
  • 27C and 27D are diagrams illustrating a mask jig.
  • FIG. 28A is a diagram illustrating a vacuum process apparatus.
  • FIG. 28B is a diagram illustrating a cooling plate.
  • FIG. 28C is a diagram illustrating a cross section of the cooling plate.
  • FIG. 29 is a diagram illustrating a display device.
  • 30A to 30C are diagrams illustrating a display device.
  • 31A to 31D are views for explaining a method of manufacturing a display device.
  • 32A to 32D are views for explaining a method of manufacturing a display device.
  • 33A to 33E are views for explaining a method of manufacturing a display device.
  • FIG. 34 is a diagram illustrating a manufacturing apparatus.
  • FIG. 35 is a diagram illustrating a manufacturing apparatus.
  • One aspect of the present invention is a manufacturing apparatus mainly used for forming a display device having a light emitting element (also referred to as a light emitting device) such as an organic EL element.
  • a light emitting element also referred to as a light emitting device
  • an organic EL element In order to miniaturize the organic EL element or increase the occupied area in the pixel, it is preferable to use a lithography process. However, if impurities such as water, oxygen, and hydrogen enter the organic EL element, the reliability is impaired. Therefore, it is necessary to take measures such as controlling the atmosphere from the manufacturing stage to a low dew point so that the surface and side surfaces of the patterned organic layer are not exposed to the atmosphere.
  • the film forming step, the lithography step, the etching step, and the sealing step for forming the organic EL element can be continuously performed without opening to the atmosphere. Therefore, it is possible to form a fine, high-luminance, high-reliability organic EL element.
  • it is an in-line type in which the devices are arranged in the process order of the light emitting device, and can be manufactured with high throughput.
  • a silicon wafer can be used as a support substrate for forming an organic EL element.
  • a silicon wafer on which a drive circuit, a pixel circuit, and the like are formed in advance can be used as a support substrate, and an organic EL element can be formed on these circuits. Therefore, it is possible to form a display device having a narrow frame suitable for AR or VR.
  • the silicon wafer is preferably ⁇ 8 inch or more (for example, ⁇ 12 inch).
  • FIG. 1 is a block diagram illustrating a manufacturing apparatus for a light emitting device according to an aspect of the present invention.
  • the manufacturing apparatus has a plurality of clusters arranged in process order.
  • a group of devices sharing a transport device or the like is referred to as a cluster.
  • the substrate forming the light emitting device is subjected to each step by moving the clusters in order.
  • the manufacturing apparatus shown in FIG. 1 is an example having clusters C1 to C14.
  • the clusters C1 to C14 are connected in order, and the substrate 60a put into the cluster C1 can be taken out from the cluster C14 as the substrate 60b on which the light emitting device is formed.
  • the clusters C1, C3, C5, C7, C9, C11, and C13 have a group of devices for performing the process under atmosphere control. Further, the clusters C2, C4, C6, C10, C12 and C14 have a group of devices for performing a vacuum process (decompression process).
  • Clusters C1, C5, and C9 mainly have devices for cleaning and baking the substrate.
  • Clusters C2, C6, and C10 mainly include an apparatus for forming an organic compound possessed by a light emitting device.
  • the clusters C3, C7, and C11 mainly have an apparatus or the like for performing a lithography process.
  • Clusters C4, C8, and C12 mainly have an apparatus for performing an etching process and an ashing process.
  • the cluster C13 has an etching process, a device for cleaning the substrate, and the like.
  • the cluster C14 mainly includes a device for forming an organic compound contained in the light emitting device, a device for forming a protective film for sealing the light emitting device, and the like.
  • FIG. 2 is a top view for explaining clusters C1 to C4.
  • the cluster C1 is connected to the cluster C2 via the load lock chamber B1.
  • the cluster C2 is connected to the cluster C3 via the load lock chamber B2.
  • the cluster C3 is connected to the cluster C4 via the load lock chamber B3.
  • the cluster C4 is connected to the cluster C5 (see FIG. 3) via the load lock chamber B4.
  • Cluster C1 and cluster C3 have a normal pressure process device A.
  • Cluster C1 has a transfer chamber TF1 and normal pressure process devices A (normal pressure process devices A1 and A2) that mainly perform processes under normal pressure.
  • the cluster C3 has a transfer chamber TF3 and a normal pressure process device A (normal pressure process devices A3 to A7). Further, the cluster C1 is provided with a load chamber LD.
  • the number of atmospheric pressure process devices A possessed by each cluster may be one or more according to the purpose.
  • the normal pressure process apparatus A is not limited to the process under normal pressure, and may be controlled to a negative pressure or a positive pressure slightly higher than the normal pressure. Further, when a plurality of normal pressure process devices A are provided, the atmospheric pressure may be different for each.
  • a valve for introducing the inert gas (IG) is connected to the transfer chambers TF1 and TF3 and the atmospheric pressure process apparatus A, and the atmosphere can be controlled to an inert gas atmosphere.
  • the inert gas nitrogen or a noble gas such as argon or helium can be used.
  • the inert gas preferably has a low dew point (for example, -50 ° or less).
  • a cleaning device As the normal pressure process device A included in the cluster C1, a cleaning device, a baking device, or the like can be applied.
  • a spin cleaning device, a hot plate type baking device, and the like can be applied.
  • the baking device may be a vacuum baking device.
  • an apparatus for performing a lithography process can be applied.
  • a resin (photoresist) coating device an exposure device, a developing device, a baking device, etc. may be applied.
  • resin UV curable resin, etc.
  • a device, a nanoimprint device, or the like may be applied.
  • a cleaning device, a wet etching device, a coating device, a resist stripping device, or the like may be applied to the atmospheric pressure process device A depending on the application.
  • each of the normal pressure process devices A1 and A2 is connected to the transfer chamber TF1 via a gate valve.
  • a gate valve By providing a gate valve, it is possible to control the atmospheric pressure, control the type of inert gas, prevent cross-contamination, and the like.
  • the transfer chamber TF1 is connected to the load chamber via a gate valve. Further, it is connected to the load lock chamber B1 via another gate valve.
  • the transfer chamber TF1 is provided with a transfer device 70a.
  • the transfer device 70a can transfer the substrate from the load chamber LD to the normal pressure process device A. Further, the substrate taken out from the normal pressure process apparatus A can be carried out to the load lock chamber B1.
  • the transfer chamber TF3 is connected to the load lock chamber B2 via a gate valve. Further, it is connected to the load lock chamber B3 via another gate valve.
  • the transfer chamber TF3 is provided with a transfer device 70b.
  • the transfer device 70b can transfer the substrate from the load lock chamber B2 to the normal pressure process device A. Further, the substrate taken out from the normal pressure process apparatus A can be carried out to the load lock chamber B3.
  • Cluster C2 and cluster C4 have a vacuum process device V.
  • the cluster C2 has a transfer chamber TF2 and a vacuum process device V (vacuum process devices V1 to V4).
  • the cluster C4 has a transfer chamber TF4 and a vacuum process apparatus V (vacuum process apparatus V5, V6).
  • the number of vacuum process devices V possessed by each cluster may be one or more according to the purpose.
  • a vacuum pump VP is connected to the vacuum process apparatus V, and gate valves are provided between the vacuum process apparatus V and the transfer chambers TF (transfer chambers TF2 and TF4). Therefore, different processes can be performed in parallel in each vacuum process apparatus V.
  • the vacuum process means processing in a controlled environment under reduced pressure. Therefore, the vacuum process includes not only the process under high vacuum but also the process of introducing a process gas and performing pressure control under reduced pressure.
  • Independent vacuum pump VPs are also provided in the transfer chambers TF2 and TF4 to prevent cross-contamination in the process performed by the vacuum process apparatus V.
  • a deposition apparatus such as a vapor deposition apparatus, a sputtering apparatus, a CVD (Chemical Vapor Deposition) apparatus, and an ALD (Atomic Layer Deposition) apparatus can be applied.
  • a thermal CVD apparatus using heat a PECVD apparatus using plasma (Plasma Enhanced CVD apparatus), or the like can be used.
  • the ALD device a thermal ALD device using heat, a PEALD device using a plasma-excited reactor (Plasma Enhanced ALD device), or the like can be used.
  • vacuum process device V included in the cluster C4 for example, a dry etching device, an ashing device, or the like can be applied.
  • the transfer chamber TF2 is connected to the load lock chamber B1 via a gate valve. Further, it is connected to the load lock chamber B2 via another gate valve.
  • the transfer chamber TF2 is provided with a transfer device 71a.
  • the transfer device 71a can reverse the substrate installed in the load lock chamber B1 and transfer it to the vacuum process device V. Further, the substrate taken out from the vacuum process device V can be inverted and carried out to the load lock chamber B2.
  • the transfer chamber TF4 is connected to the load lock chamber B3 via a gate valve. Further, it is connected to the load lock chamber B4 via another gate valve.
  • the transfer chamber TF4 is provided with a transfer device 70c.
  • the transfer device 70c can transfer the load from the load lock chamber B3 to the vacuum process device V and carry it out to the load lock chamber B4.
  • the load lock chambers B1, B2, B3, and B4 are provided with a vacuum pump VP and a valve for introducing an inert gas. Therefore, the load lock chambers B1, B2, B3, and B4 can be controlled to a reduced pressure or an inert gas atmosphere. For example, when the substrate is transported from the cluster C2 to the cluster C3, the substrate is carried in from the cluster C2 with the load lock chamber B2 depressurized, the load lock chamber B2 is made into an inert gas atmosphere, and then the substrate is carried out to the cluster C3. It can be carried out.
  • the transport devices 70a, 70b, and 70c have a mechanism for transporting the substrate by placing it on the hand portion. Since the transfer devices 70b and 70c are operated under normal pressure, a vacuum suction mechanism or the like may be provided in the hand portion.
  • the transport device 71a has a mechanism for fixing the substrate to the hand portion and transporting the substrate. Since the transport device 71a is operated under reduced pressure, for example, an electrostatic adsorption mechanism or the like can be used as the fixing method.
  • the load lock chambers B1 and B2 are provided with stages 80a and 80b on which the substrate can be installed on the pins. Further, in the load lock chambers B3 and B4, stages 81a and 81b on which the substrate can be installed are provided. Note that these are examples, and stages having other configurations may be used. Details of the transfer of the substrate in the load lock chamber B1 will be described later.
  • FIG. 3 is a top view for explaining clusters C5 to C8.
  • the cluster C5 is connected to the cluster C6 via the load lock chamber B5.
  • the cluster C6 is connected to the cluster C7 via the load lock chamber B6.
  • the cluster C7 is connected to the cluster C8 via the load lock chamber B7.
  • the cluster C8 is connected to the cluster C9 (see FIG. 4) via the load lock chamber B8.
  • clusters C5 to C8 are the same as that of clusters C1 to C4, cluster C5 corresponds to cluster C1, cluster C6 corresponds to cluster C2, cluster C7 corresponds to cluster C3, and clusters. C8 corresponds to cluster C4.
  • the load chamber LD in the cluster C1 is replaced with the load lock chamber B4 in the cluster C5.
  • the load lock room B5 corresponds to the load lock room B1
  • the load lock room B6 corresponds to the load lock room B2
  • the load lock room B7 corresponds to the load lock room B3
  • the load lock room B8 corresponds to the load lock room B4. Corresponds to.
  • Cluster C5 and cluster C7 have a normal pressure process device A.
  • the cluster C5 has a transfer chamber TF5 and normal pressure process devices A (normal pressure process devices A8 and A9) that mainly perform processes under normal pressure.
  • the cluster C7 has a transfer chamber TF7 and a normal pressure process device A (normal pressure process devices A10 to A14).
  • the transfer chamber TF5 is connected to the load lock chamber B4 via a gate valve. Further, it is connected to the load lock chamber B5 via another gate valve.
  • the transfer chamber TF5 is provided with a transfer device 70d.
  • the transfer device 70d can transfer the substrate from the load lock chamber B4 to the normal pressure process device A. Further, the substrate taken out from the normal pressure process apparatus A can be carried out to the load lock chamber B5.
  • the transfer chamber TF7 is connected to the load lock chamber B6 via a gate valve. Further, it is connected to the load lock chamber B7 via another gate valve.
  • the transfer chamber TF7 is provided with a transfer device 70e.
  • the transfer device 70d can transfer the substrate from the load lock chamber B6 to the normal pressure process device A. Further, the substrate taken out from the normal pressure process apparatus A can be carried out to the load lock chamber B7.
  • Cluster C6 and cluster C8 have a vacuum process device V.
  • the cluster C6 has a transfer chamber TF6 and a vacuum process device V (vacuum process devices V7 to V10).
  • the cluster C8 has a transfer chamber TF8 and a vacuum process apparatus V (vacuum process apparatus V11, V12).
  • the transfer chamber TF6 is connected to the load lock chamber B5 via a gate valve. Further, it is connected to the load lock chamber B6 via another gate valve.
  • the transfer chamber TF6 is provided with a transfer device 71b.
  • the transfer device 71b can reverse the substrate installed in the load lock chamber B5 and transfer it to the vacuum process device V. Further, the substrate taken out from the vacuum process device V can be inverted and carried out to the load lock chamber B6.
  • the transfer chamber TF8 is connected to the load lock chamber B7 via a gate valve. Further, it is connected to the load lock chamber B8 via another gate valve.
  • the transfer chamber TF8 is provided with a transfer device 70f.
  • the transfer device 70f can transfer the substrate from the load lock chamber B7 to the vacuum process device V. Further, the substrate taken out from the vacuum process device V can be carried out to the load lock chamber B8.
  • stages 80c and 80d on which the substrate can be installed on the pin are provided. Further, in the load lock chambers B7 and B8, stages 81c and 81d on which the substrate can be installed are provided.
  • FIG. 4 is a top view for explaining clusters C9 to C12.
  • the cluster C9 is connected to the cluster C10 via the load lock chamber B9.
  • the cluster C10 is connected to the cluster C11 via the load lock chamber B10.
  • the cluster C11 is connected to the cluster C12 via the load lock chamber B11.
  • the cluster C12 is connected to the cluster C13 (see FIG. 5) via the load lock chamber B12.
  • cluster C9 to C12 The basic configuration of clusters C9 to C12 is the same as that of clusters C1 to C4, cluster C9 corresponds to cluster C1, cluster C10 corresponds to cluster C2, cluster C11 corresponds to cluster C3, and clusters. C12 corresponds to cluster C4.
  • the load chamber LD in the cluster C1 is replaced with the load lock chamber B8 in the cluster C9.
  • the load lock room B9 corresponds to the load lock room B1
  • the load lock room B10 corresponds to the load lock room B2
  • the load lock room B11 corresponds to the load lock room B3
  • the load lock room B12 corresponds to the load lock room B4. Corresponds to.
  • Cluster C9 and cluster C11 have a normal pressure process device A.
  • the cluster C9 has a transfer chamber TF9 and normal pressure process devices A (normal pressure process devices A15 and A16) that mainly perform the process under normal pressure.
  • the cluster C11 has a transfer chamber TF11 and a normal pressure process device A (normal pressure process devices A17 to A21).
  • the transfer chamber TF9 is connected to the load lock chamber B8 via a gate valve. Further, it is connected to the load lock chamber B9 via another gate valve.
  • a transfer device 70 g is provided in the transfer chamber TF9. The transfer device 70 g can transfer the substrate from the load lock chamber B8 to the normal pressure process device A. Further, the substrate taken out from the normal pressure process apparatus A can be carried out to the load lock chamber B9.
  • the transfer chamber TF11 is connected to the load lock chamber B10 via a gate valve. Further, it is connected to the load lock chamber B11 via another gate valve.
  • the transfer chamber TF11 is provided with a transfer device 70h.
  • the transfer device 70h can transfer the substrate from the load lock chamber B10 to the normal pressure process device A. Further, the substrate taken out from the normal pressure process apparatus A can be carried out to the load lock chamber B11.
  • Cluster C10 and cluster C12 have a vacuum process device V.
  • the cluster C10 has a transfer chamber TF10 and a vacuum process device V (vacuum process devices V13 to V16).
  • the cluster C12 has a transfer chamber TF12 and a vacuum process apparatus V (vacuum process apparatus V17, V18).
  • the transfer chamber TF10 is connected to the load lock chamber B9 via a gate valve. Further, it is connected to the load lock chamber B10 via another gate valve.
  • the transfer chamber TF10 is provided with a transfer device 71c.
  • the transfer device 71c can reverse the substrate installed in the load lock chamber B9 and transfer it to the vacuum process device V. Further, the substrate taken out from the vacuum process device V can be inverted and carried out to the load lock chamber B10.
  • the transfer chamber TF12 is connected to the load lock chamber B11 via a gate valve. Further, it is connected to the load lock chamber B12 via another gate valve.
  • the transfer chamber TF12 is provided with a transfer device 70i.
  • the transfer device 70i can transfer the substrate from the load lock chamber B11 to the vacuum process device V and carry it out to the load lock chamber B12.
  • stages 80e and 80f on which the substrate can be installed on the pin are provided. Further, in the load lock chambers B11 and B12, stages 81e and 81f on which the substrate can be installed are provided.
  • FIG. 5 is a top view for explaining clusters C13 and C14.
  • the cluster C13 is connected to the cluster C14 via the load lock chamber B13.
  • the description common to the clusters C1, C2 and the like will be omitted.
  • Cluster C13 has a normal pressure process device A.
  • the cluster C13 has a transfer chamber TF13 and normal pressure process devices A (normal pressure process devices A22 and A23) that mainly perform processes under normal pressure.
  • an etching device, a baking device, or the like can be applied.
  • a wet etching device, a hot plate type baking device, or the like can be used.
  • the baking device may be a vacuum baking device.
  • the transfer chamber TF13 is connected to the load lock chamber B12 via a gate valve. Further, it is connected to the load lock chamber B13 via another gate valve.
  • a transfer device 70j is provided in the transfer chamber TF13. The transfer device 70j can transfer the substrate from the load lock chamber B12 to the normal pressure process device A. Further, the substrate taken out from the normal pressure process apparatus A can be carried out to the load lock chamber B13.
  • a film deposition device such as a vapor deposition device, a sputtering device, a CVD device, and an ALD device, a facing substrate bonding device, and the like can be applied.
  • the load lock chamber B13 is provided with a vacuum pump VP and a valve for introducing an inert gas. Therefore, the load lock chamber B13 can be controlled to a reduced pressure or an inert gas atmosphere.
  • the transfer chamber TF14 is connected to the load lock chamber B13 via a gate valve. It is also connected to the unload chamber ULD via another gate valve.
  • the transfer chamber TF14 is provided with a transfer device 70k.
  • the transfer device 70k can transfer the substrate from the load lock chamber B13 to the vacuum process device V. Further, the substrate taken out from the vacuum process apparatus V can be carried out to the unload chamber ULD.
  • clusters C1 to C4 form an organic EL element that emits light of the first color
  • clusters C5 to C8 form an organic EL element that emits light of the second color
  • clusters C9 to C12 form a third organic EL element.
  • a continuous process can be performed in an atmosphere-controlled device until an organic EL element that emits colored light is formed, unnecessary elements are removed by the cluster C13, and a protective film is formed by the cluster C14. Details of these steps will be described later.
  • FIG. 6 is a block diagram illustrating a manufacturing apparatus for a light emitting device different from that in FIG.
  • the manufacturing apparatus shown in FIG. 6 is an example having clusters C1, C2, C3, C4, C6, C7, C8, C10, C11, C12, C13, and C14. The configuration is omitted.
  • Clusters C1, C2, C3, C4, C6, C7, C8, C10, C11, C12, C13, and C14 are connected in order, and the substrate 60a inserted into the cluster C1 is the substrate 60b on which the light emitting device is formed. Can be taken out from.
  • clusters C5 and C9 have a cleaning device and a baking device.
  • the steps prior to the cleaning step are etching (dry etching) and ashing steps. If the residual gas components, residues, deposits, etc. in these steps do not adversely affect the subsequent steps, the cleaning step can be omitted. Further, when the cleaning step is omitted, it is not necessary to consider the residual moisture of the substrate and the like, so that the baking step can also be omitted. Therefore, in some cases, the configuration of FIG. 6 may be obtained by omitting the clusters C5 and C9 from the manufacturing apparatus shown in FIG. By omitting the clusters C5 and C9, the total number of clusters and the number of load lock chambers can be reduced.
  • Cluster C1 to Cluster C4 The configuration of clusters C1 to C4 can be the same as the configuration shown in FIG. However, the load lock chamber B4 is connected to the cluster C6.
  • FIG. 7 is a top view illustrating clusters C6, C7, C8, and C10.
  • the cluster C6 is connected to the cluster C7 via the load lock chamber B6.
  • the cluster C7 is connected to the cluster C8 via the load lock chamber B7.
  • the cluster C8 is connected to the cluster C10 via the load lock chamber B9.
  • the cluster C10 is connected to the cluster C11 (see FIG. 8) via the load lock chamber B10.
  • the transfer chamber TF6 included in the cluster C6 is connected to the load lock chamber B4 via a gate valve. Further, it is connected to the load lock chamber B6 via another gate valve.
  • the transfer chamber TF6 is provided with a transfer device 71b.
  • the transfer device 71b can reverse the substrate installed in the load lock chamber B4 and transfer it to the vacuum process device V. Further, the substrate taken out from the vacuum process device V can be inverted and carried out to the load lock chamber B6.
  • the transfer chamber TF7 included in the cluster C7 is connected to the load lock chamber B6 via a gate valve. Further, it is connected to the load lock chamber B7 via another gate valve.
  • the transfer chamber TF7 is provided with a transfer device 70e.
  • the transfer device 70e can transfer the substrate from the load lock chamber B6 to the normal pressure process device A. Further, the substrate taken out from the normal pressure process apparatus A can be carried out to the load lock chamber B7.
  • the transfer chamber TF8 included in the cluster C8 is connected to the load lock chamber B7 via a gate valve. Further, it is connected to the load lock chamber B9 via another gate valve.
  • the transfer chamber TF8 is provided with a transfer device 70f.
  • the transfer device 70f can transfer the substrate from the load lock chamber B7 to the vacuum process device V. Further, the substrate taken out from the vacuum process device V can be carried out to the load lock chamber B9.
  • the transfer chamber TF10 included in the cluster C10 is connected to the load lock chamber B9 via a gate valve. Further, it is connected to the load lock chamber B10 via another gate valve.
  • the transfer chamber TF10 is provided with a transfer device 71c.
  • the transfer device 71c can reverse the substrate installed in the load lock chamber B9 and transfer it to the vacuum process device V. Further, the substrate taken out from the vacuum process device V can be inverted and carried out to the load lock chamber B10.
  • FIG. 8 is a top view illustrating clusters C11, C12, C13, and C14.
  • the cluster C11 is connected to the cluster C12 via the load lock chamber B11.
  • the cluster C12 is connected to the cluster C13 via the load lock chamber B12.
  • the cluster C13 is connected to the cluster C14 via the load lock chamber B13.
  • the transfer chamber TF11 included in the cluster C11 is connected to the load lock chamber B10 via a gate valve. Further, it is connected to the load lock chamber B11 via another gate valve.
  • the transfer chamber TF6 is provided with a transfer device 70h.
  • the transfer device 70h can transfer the substrate from the load lock chamber B10 to the normal pressure process device A. Further, the substrate taken out from the normal pressure process apparatus A can be carried out to the load lock chamber B11.
  • the transfer chamber TF12 included in the cluster C12 is connected to the load lock chamber B11 via a gate valve. Further, it is connected to the load lock chamber B12 via another gate valve.
  • the transfer chamber TF12 is provided with a transfer device 70i.
  • the transfer device 70i can transfer the substrate from the load lock chamber B11 to the vacuum process device V. Further, the substrate taken out from the vacuum process device V can be carried out to the load lock chamber B12.
  • the transfer chamber TF13 included in the cluster C13 is connected to the load lock chamber B12 via a gate valve. Further, it is connected to the load lock chamber B13 via another gate valve.
  • a transfer device 70j is provided in the transfer chamber TF13. The transfer device 70j can transfer the substrate from the load lock chamber B12 to the normal pressure process device A. Further, the substrate taken out from the normal pressure process apparatus A can be carried out to the load lock chamber B13.
  • the transfer chamber TF14 of the cluster C14 is connected to the load lock chamber B13 via a gate valve. It is also connected to the unload chamber ULD via another gate valve.
  • a transfer device 70k is provided in the transfer chamber TF13. The transfer device 70k can transfer the substrate from the load lock chamber B13 to the vacuum process device V. Further, the substrate taken out from the vacuum process apparatus V can be carried out to the unload chamber ULD.
  • FIG. 9 is a block diagram showing a modified example of the manufacturing apparatus for the light emitting device shown in FIG.
  • cluster C4 and cluster C6 are one cluster
  • cluster C8 and cluster C10 are one cluster.
  • the names of these integrated clusters are cluster C4 + C6 and cluster C8 + C10.
  • the cluster C4 is connected to the cluster C6 via the load lock chamber B4. That is, the substrate is transported from the cluster C4 to the cluster C6 to perform the process.
  • the cluster C4 and the cluster C6 are both clusters having the vacuum process apparatus V.
  • cluster C8 and cluster C10. By integrating clusters C4 and C6, the total number of clusters and the number of load lock rooms can be reduced.
  • FIG. 10 is a top view illustrating clusters C1, C2, C3, and C4 + C6.
  • the connection configuration of the clusters C1 to C3 is the same as the configuration shown in FIG.
  • the cluster C3 is connected to the clusters C4 + C6 via the load lock chamber B5.
  • the clusters C4 + C6 are connected to the cluster C7 (see FIG. 11) via the load lock chamber B6.
  • Clusters C4 + C6 have a transfer chamber TF46 and a vacuum process apparatus V.
  • the vacuum process apparatus V vacuum process apparatus V5 to V10
  • a vapor deposition apparatus for example, a vapor deposition apparatus, a sputtering apparatus, a CVD apparatus, an ALD apparatus, an etching apparatus, an ashing apparatus and the like can be applied.
  • the load lock chambers B5 and B6 are provided with a vacuum pump VP and a valve for introducing an inert gas. Therefore, the load lock chambers B5 and B6 can be controlled to reduce pressure or to have an inert gas atmosphere.
  • the transfer chamber TF46 is connected to the load lock chamber B5 via a gate valve. Further, it is connected to the load lock chamber B6 via another gate valve.
  • the transfer chamber TF46 is provided with a transfer device 71b.
  • the transfer device 71b can transfer the substrate from the load lock chamber B5 to the vacuum process device V. Further, the substrate taken out from the vacuum process device V can be carried out to the load lock chamber B6.
  • FIG. 11 is a top view illustrating clusters C7, C8 + C10, C11, and C12.
  • the connection configuration of the clusters C11 and C12 is the same as the configuration shown in FIG.
  • the cluster C7 is connected to the clusters C8 + C10 via the load lock chamber B9.
  • the clusters C8 + C10 are connected to the cluster C11 via the load lock chamber B10.
  • Clusters C8 + C10 have a transfer chamber TF810 and a vacuum process apparatus V.
  • the vacuum process apparatus V vacuum process apparatus V11 to V16
  • a vapor deposition apparatus for example, a vapor deposition apparatus, a sputtering apparatus, a CVD apparatus, an ALD apparatus, an etching apparatus, an ashing apparatus and the like can be applied.
  • the load lock chambers B9 and B10 are provided with a vacuum pump VP and a valve for introducing an inert gas. Therefore, the load lock chambers B9 and B10 can be controlled to reduce pressure or to have an inert gas atmosphere.
  • the transfer chamber TF810 is connected to the load lock chamber B9 via a gate valve. Further, it is connected to the load lock chamber B10 via another gate valve.
  • the transfer chamber TF810 is provided with a transfer device 71c.
  • the transfer device 71c can transfer the substrate from the load lock chamber B9 to the vacuum process device V. Further, the substrate taken out from the vacuum process device V can be carried out to the load lock chamber B10.
  • Clusters C13, C14 The configurations of the clusters C13 and C14 can be the same as the configurations shown in FIG.
  • FIG. 12A is a diagram showing a transfer device 70a included in the cluster C1, a stage 80a included in the load lock chamber B1, and a transfer device 71a included in the cluster C2.
  • the chamber wall, gate valve, etc. are omitted.
  • the transport device 70a has an elevating mechanism 91, an arm 92, and a hand portion 93.
  • the hand portion 93 has a flat surface having a notch portion, and the substrate can be placed on the flat surface. Since the cluster C1 is a cluster having the normal pressure process device A, the hand portion 93 may be provided with a vacuum suction mechanism or the like. Alternatively, an electrostatic adsorption mechanism may be provided.
  • the transport device 71a includes an elevating mechanism 94, an arm 95, and a substrate fixing portion 96.
  • the substrate fixing portion 96 has a flat surface for holding the substrate 60, and has a size smaller than the width of the cutout portion of the hand portion 93 of the transfer device 70a. Since the cluster C1 is a cluster having a vacuum process device V, it is preferable to provide an electrostatic adsorption mechanism on the substrate fixing portion 96. Further, the transfer device 71a has a substrate reversing mechanism described later.
  • the stage 80a has a pin 82 on which the substrate 60 is placed.
  • the first length (the length not including the diameter of the pin 82) connecting the two pins 82 is set to a size larger than the width of the substrate fixing portion 96.
  • the second length (the length including the diameter of the pin 82) connecting the two pins 82 is set to be smaller than the width of the notch portion of the hand portion 93.
  • the stage 80a may be provided with an elevating mechanism.
  • the substrate 60 held by the hand portion 93 of the transport device 70a is transported to the stage 80a (see FIG. 12B), lowered by the elevating mechanism 91, and the substrate 60 is placed on the pin 82 (see FIG. 12C).
  • the substrate fixing portion 96 of the transfer device 71a is inserted between the pins 82 of the stage 80a with the substrate fixing portion 96 facing upward, and the arm 95 is raised to fix the back surface of the substrate 60 to the substrate fixing portion 96 (see FIG. 13A).
  • the arm 95 is further raised, and the substrate 60 is carried into the cluster C1 through the expansion / contraction operation and the turning operation of the arm 95 (see FIG. 13B).
  • the substrate 60 is inverted while being fixed to the substrate fixing portion 96 by the rotation mechanism 97 provided between the substrate fixing portion 96 and the arm 95 (see FIG. 13C).
  • the inverted substrate 60 can be carried into a film forming apparatus or the like on which the substrate is installed by a face-down method.
  • FIG. 14A is a diagram illustrating a vacuum process apparatus V in which a substrate is installed in a face-down manner, and here exemplifies a film forming apparatus 30.
  • the view is transparent to the chamber wall, and the gate valve is omitted.
  • the film forming apparatus 30 includes a film forming material supply unit 31, a mask jig 32, and a substrate alignment unit 33. If the film forming apparatus 30 is a vapor deposition apparatus, the film forming material supply unit 31 is a portion where a vapor deposition source is installed. Further, if the film forming apparatus 30 is a sputtering apparatus, it is a portion where a target (cathode) is installed.
  • the substrate 60 can be carried into the substrate alignment unit 33 in an inverted state.
  • a mask jig 32 is installed below the substrate alignment portion 33.
  • a circuit or the like is provided in advance on the surface of the substrate 60, and the substrate 60 and the mask jig 32 are brought into close contact with each other so as not to form a film in an unnecessary region.
  • the substrate alignment portion 33 adjusts the positions of the portion of the substrate 60 that requires film formation and the opening 35 of the mask jig 32.
  • the opening 35 may be adjusted according to the purpose.
  • the size of the opening 35 can be determined according to the size of the exposure area described below.
  • the external connection terminal is estimated on the assumption that it is taken out from the back surface using a through electrode. Therefore, the display area can be widened. A pad may be provided in the exposed area. In this case, the display area becomes smaller, but the manufacturing cost related to the configuration for taking out the external connection terminal can be reduced.
  • 15A to 15C are examples in the case where the aspect ratio of the display area is 4: 3, respectively.
  • FIG. 15A is an example in which a sealing region is provided inside the exposure region (32 mm ⁇ 24 mm) of the exposure apparatus.
  • the width of the sealing region is 1.5 mm in the vertical direction and 2.0 mm in the horizontal direction.
  • the size of the display area is 28 mm ⁇ 21 mm (aspect ratio is 4: 3), and the diagonal is about 1.38 inches.
  • the number of display devices per substrate is 72.
  • the width of the sealing region is 2.0 mm in the vertical direction and 2.65 mm in the horizontal direction
  • the size of the display area is 26.7 mm ⁇ 20 mm (aspect ratio is 4: 3)
  • the diagonal is about 1. It becomes .32 inch.
  • the size of the display area is 24 mm ⁇ 18 mm (aspect ratio is 4: 3) and the diagonal is about 1.18 inch. It becomes. In each case, the number of display devices per substrate is 72.
  • FIG. 15B and 15C are examples in which a sealing region is provided outside the exposure region (32 mm ⁇ 24 mm) of the exposure apparatus. In this case, the exposure is performed with a gap corresponding to the sealing region.
  • a marker area is provided inside the exposed area.
  • FIG. 15B is an example in which the width of the marker region is 0.5 mm in the vertical direction, 0.7 mm in the horizontal direction, and the width of the sealing region is 2.0 mm. At this time, the size of the display area of the display device is about 1.51 inches diagonally. The number of display devices per substrate is 56. When the width of the marker area is 1.0 mm in the vertical direction and 1.3 mm in the horizontal direction, the size of the display area is approximately 1.45 inches diagonally.
  • FIG. 15B is an example in which the width of the marker region is 0.5 mm in the vertical direction, 0.7 mm in the horizontal direction, and the width of the sealing region is 2.0 mm. At this time, the size of the display area of the display device is about 1.51 inches
  • the width of the marker region is 0.5 mm in the vertical direction, 0.7 mm in the horizontal direction, and the width of the sealing region is 3.0 mm.
  • the size of the display area of the display device is about 1.51 inches diagonally, which is the same as the configuration of FIG. 15B.
  • the number of display devices taken per substrate is 49, which is about 13% lower than the configuration shown in FIG. 15B.
  • Embodiment 2 In the present embodiment, a manufacturing apparatus different from the first embodiment will be described with reference to the drawings.
  • the manufacturing apparatus described in the present embodiment is different from the manufacturing apparatus described in the first embodiment in that some film forming apparatus is a batch type.
  • the elements common to the first embodiment will be described with reference to a common reference numeral.
  • FIG. 16 is a block diagram illustrating a manufacturing apparatus for a light emitting device according to an aspect of the present invention.
  • the manufacturing apparatus has a plurality of clusters arranged in process order.
  • a group of devices sharing a transport device or the like is referred to as a cluster.
  • the substrate forming the light emitting device is subjected to each step by moving the clusters in order.
  • the manufacturing apparatus shown in FIG. 16 is an example having clusters C1 to C14.
  • the clusters C1 to C14 are connected in order, and the substrate 60a put into the cluster C1 can be taken out from the cluster C14 as the substrate 60b on which the light emitting device is formed.
  • the clusters C1, C3, C5, C7, C9, C11, and C13 have a group of devices for performing the process under atmosphere control. Further, the clusters C2, C4, C6, C10, C12 and C14 have a group of devices for performing a vacuum process (decompression process).
  • Clusters C1, C5, and C9 mainly have devices for cleaning and baking the substrate.
  • Clusters C2, C6, and C10 mainly include an apparatus for forming an organic compound possessed by a light emitting device.
  • the clusters C3, C7, and C11 mainly have an apparatus or the like for performing a lithography process.
  • Clusters C4, C8, and C12 mainly have an apparatus for performing an etching process and an ashing process.
  • the cluster C13 has an etching process, a device for cleaning the substrate, and the like.
  • the cluster C14 mainly includes a device for forming an organic compound contained in the light emitting device, a device for forming a protective film for sealing the light emitting device, and the like.
  • Clusters C1 to C4 will be described with reference to FIGS. 17 and 18.
  • the cluster C1 is connected to the cluster C2 via the load lock chamber B1.
  • the cluster C2 is connected to the cluster C3 via the load lock chamber B2.
  • the cluster C3 is connected to the cluster C4 via the load lock chamber B3.
  • the cluster C4 is connected to the cluster C5 via the load lock chamber B4.
  • Cluster C1 and cluster C3 have a normal pressure process device A.
  • Cluster C1 has a transfer chamber TF1 and normal pressure process devices A (normal pressure process devices A1 and A2) that mainly perform processes under normal pressure.
  • the cluster C3 has a transfer chamber TF3 and a normal pressure process device A (normal pressure process devices A3 to A7). Further, the cluster C1 is provided with a load chamber LD.
  • the number of atmospheric pressure process devices A included in the clusters C1 and C3 may be one or more according to the purpose.
  • the normal pressure process apparatus A is not limited to the process under normal pressure, and may be controlled to a negative pressure or a positive pressure slightly higher than the normal pressure. Further, when a plurality of normal pressure process devices A are provided, the atmospheric pressure may be different for each.
  • a valve for introducing the inert gas (IG) is connected to the transfer chambers TF1 and TF3 and the atmospheric pressure process apparatus A, and the atmosphere can be controlled to an inert gas atmosphere.
  • the inert gas nitrogen or a noble gas such as argon or helium can be used.
  • the inert gas preferably has a low dew point (for example, -50 ° or less).
  • a cleaning device As the normal pressure process device A included in the cluster C1, a cleaning device, a baking device, or the like can be applied.
  • a spin cleaning device, a hot plate type baking device, and the like can be applied.
  • the baking device may be a vacuum baking device.
  • an apparatus for performing a lithography process can be applied.
  • a resin (photoresist) coating device an exposure device, a developing device, a baking device, etc. may be applied.
  • resin UV curable resin, etc.
  • a device, a nanoimprint device, or the like may be applied.
  • a cleaning device, a wet etching device, a coating device, a resist stripping device, or the like may be applied to the atmospheric pressure process device A depending on the application.
  • each of the normal pressure process devices A1 and A2 is connected to the transfer chamber TF1 via a gate valve.
  • a gate valve By providing a gate valve, it is possible to control the atmospheric pressure, control the type of inert gas, prevent cross-contamination, and the like.
  • the transfer chamber TF1 is connected to the load chamber via a gate valve. Further, it is connected to the load lock chamber B1 via another gate valve.
  • the transfer chamber TF1 is provided with a transfer device 70a.
  • the transfer device 70a can transfer the substrate from the load chamber LD to the normal pressure process device A. Further, the substrate taken out from the normal pressure process apparatus A can be carried out to the load lock chamber B1.
  • the transfer chamber TF3 is connected to the load lock chamber B2 via a gate valve. Further, it is connected to the load lock chamber B3 via another gate valve.
  • the transfer chamber TF3 is provided with a transfer device 70b.
  • the transfer device 70b can transfer the substrate from the load lock chamber B2 to the normal pressure process device A. Further, the substrate taken out from the normal pressure process apparatus A can be carried out to the load lock chamber B3.
  • Cluster C2 and cluster C4 have a vacuum process device V.
  • the cluster C2 has a transfer chamber TF2 and a vacuum process device V (vacuum process devices V1 to V4).
  • the cluster C4 has a transfer chamber TF4 and a vacuum process apparatus V (vacuum process apparatus V5, V6).
  • the number of vacuum process devices V included in the clusters C2 and C4 may be one or more according to the purpose.
  • a vacuum pump VP is connected to the vacuum process apparatus V, and gate valves are provided between the vacuum process apparatus V and the transfer chambers TF (transfer chambers TF2 and TF4). Therefore, different processes can be performed in parallel in each vacuum process apparatus V.
  • the vacuum process means processing in a controlled environment under reduced pressure. Therefore, the vacuum process includes not only the process under high vacuum but also the process of introducing a process gas and performing pressure control under reduced pressure.
  • Independent vacuum pump VPs are also provided in the transfer chambers TF2 and TF4 to prevent cross-contamination in the process performed by the vacuum process apparatus V.
  • a deposition apparatus such as a vapor deposition apparatus, a sputtering apparatus, a CVD (Chemical Vapor Deposition) apparatus, and an ALD (Atomic Layer Deposition) apparatus can be applied.
  • a thermal CVD apparatus using heat a PECVD apparatus using plasma (Plasma Enhanced CVD apparatus), or the like can be used.
  • the ALD device a thermal ALD device using heat, a PEALD device using a plasma-excited reactor (Plasma Enhanced ALD device), or the like can be used.
  • vacuum process device V included in the cluster C4 for example, a dry etching device, an ashing device, or the like can be applied.
  • the transfer chamber TF2 is connected to the load lock chamber B1 via a gate valve. Further, it is connected to the load lock chamber B2 via another gate valve.
  • the transfer chamber TF2 is provided with a transfer device 71a and a substrate transfer device 52a.
  • the substrate transfer device 52a has a stage 83a and transfer devices 72a and 72b.
  • a mask jig 61 can be installed on the stage 83a.
  • a plurality of substrates can be attached to the mask jig 61, and the transport device 71a can transport the substrates mounted on the mask jig 61 to each vacuum process device V. Further, the stage 83a can be moved in the X direction, the Y direction, and the ⁇ direction.
  • the transfer device 72a can be mounted on the mask jig 61 by reversing the substrate installed in the load lock chamber B1. Further, the transfer device 72b can reverse the substrate taken out from the mask jig 61 and carry it out to the load lock chamber B2. Details of these operations will be described later.
  • a plurality of types of mask jigs can be used as the mask jig 61.
  • the mask jig can be stored in each vacuum process device V, and can be carried in and out by the transfer device 71a.
  • the storage of the mask jig 61 may be provided at a position where the vacuum process device V is provided.
  • the vacuum process device V included in the cluster C2 is a batch type in which the substrate mounted on the mask jig 61 is carried in and processed, the cluster C2 has a large configuration.
  • the clusters C1, C3, and C4 are of the single-wafer type, they have a small configuration.
  • the transfer chamber TF4 is connected to the load lock chamber B3 via a gate valve. Further, it is connected to the load lock chamber B4 via another gate valve.
  • the transfer chamber TF4 is provided with a transfer device 70c.
  • the transfer device 70c can transfer the load from the load lock chamber B3 to the vacuum process device V and carry it out to the load lock chamber B4.
  • the load lock chambers B1, B2, B3, and B4 are provided with a vacuum pump VP and a valve for introducing an inert gas. Therefore, the load lock chambers B1, B2, B3, and B4 can be controlled to a reduced pressure or an inert gas atmosphere. For example, when the substrate is transported from the cluster C2 to the cluster C3, the substrate is carried in from the cluster C2 with the load lock chamber B2 depressurized, the load lock chamber B2 is made into an inert gas atmosphere, and then the substrate is carried out to the cluster C3. It can be carried out.
  • the transport devices 70a, 70b, 70c and the transport device 71a have a mechanism for mounting the substrate on the hand portion and transporting the substrate. Since the transfer devices 70b and 70c are operated under normal pressure, a vacuum suction mechanism or the like may be provided in the hand portion.
  • the transport devices 72a and 72b have a mechanism for fixing the substrate to the hand portion and transporting the substrate. Since the transport devices 72a and 72b are operated under reduced pressure, for example, an electrostatic adsorption mechanism or the like can be used as the fixing method.
  • the load lock chambers B1 and B2 are provided with stages 80a, 80b on which the substrate can be installed on the pins. Further, in the load lock chambers B3 and B4, stages 81a and 81b on which the substrate can be installed are provided. Note that these are examples, and stages having other configurations may be used. Details of the transfer of the substrate in the load lock chamber B1 will be described later.
  • Clusters C5 to C8 will be described with reference to FIGS. 18 and 19.
  • the cluster C5 is connected to the cluster C6 via the load lock chamber B5.
  • the cluster C6 is connected to the cluster C7 via the load lock chamber B6.
  • the cluster C7 is connected to the cluster C8 via the load lock chamber B7.
  • the cluster C8 is connected to the cluster C9 (see FIG. 19) via the load lock chamber B8.
  • clusters C5 to C8 are the same as that of clusters C1 to C4, cluster C5 corresponds to cluster C1, cluster C6 corresponds to cluster C2, cluster C7 corresponds to cluster C3, and clusters. C8 corresponds to cluster C4.
  • the load chamber LD in the cluster C1 is replaced with the load lock chamber B4 in the cluster C5.
  • the load lock room B5 corresponds to the load lock room B1
  • the load lock room B6 corresponds to the load lock room B2
  • the load lock room B7 corresponds to the load lock room B3
  • the load lock room B8 corresponds to the load lock room B4. Corresponds to.
  • Cluster C5 and cluster C7 have a normal pressure process device A.
  • the cluster C5 has a transfer chamber TF5 and normal pressure process devices A (normal pressure process devices A8 and A9) that mainly perform processes under normal pressure.
  • the cluster C7 has a transfer chamber TF7 and a normal pressure process device A (normal pressure process devices A10 to A14).
  • the transfer chamber TF5 is connected to the load lock chamber B4 via a gate valve. Further, it is connected to the load lock chamber B5 via another gate valve.
  • the transfer chamber TF5 is provided with a transfer device 70d.
  • the transfer device 70d can transfer the substrate from the load lock chamber B4 to the normal pressure process device A. Further, the substrate taken out from the normal pressure process apparatus A can be carried out to the load lock chamber B5.
  • Cluster C6 and cluster C8 have a vacuum process device V.
  • the cluster C6 has a transfer chamber TF6 and a vacuum process device V (vacuum process devices V7 to V10).
  • the cluster C8 has a transfer chamber TF8 and a vacuum process apparatus V (vacuum process apparatus V11, V12).
  • the transfer chamber TF6 is connected to the load lock chamber B5 via a gate valve. Further, it is connected to the load lock chamber B6 via another gate valve.
  • the transfer chamber TF6 is provided with a transfer device 71b and a substrate transfer device 52b.
  • the substrate transfer device 52b has a stage 83b and transfer devices 72c and 72d.
  • a mask jig 61 can be installed on the stage 83b.
  • the transfer device 71b can transfer the substrate mounted on the mask jig 61 to each vacuum process device V. Further, the stage 83b can be moved in the X direction, the Y direction, and the ⁇ direction.
  • the transfer chamber TF7 is connected to the load lock chamber B6 via a gate valve. Further, it is connected to the load lock chamber B7 via another gate valve.
  • the transfer chamber TF7 is provided with a transfer device 70e.
  • the transfer device 70d can transfer the substrate from the load lock chamber B6 to the normal pressure process device A. Further, the substrate taken out from the normal pressure process apparatus A can be carried out to the load lock chamber B7.
  • the transfer device 72c can be mounted on the mask jig 61 by reversing the substrate installed in the load lock chamber B5. Further, the transfer device 72d can reverse the substrate taken out from the mask jig 61 and carry it out to the load lock chamber B6.
  • the transfer chamber TF8 is connected to the load lock chamber B7 via a gate valve. Further, it is connected to the load lock chamber B8 via another gate valve.
  • the transfer chamber TF8 is provided with a transfer device 70f.
  • the transfer device 70f can transfer the substrate from the load lock chamber B7 to the vacuum process device V. Further, the substrate taken out from the vacuum process device V can be carried out to the load lock chamber B8.
  • stages 80c and 80d on which the substrate can be installed on the pin are provided. Further, in the load lock chambers B7 and B8, stages 81c and 81d on which the substrate can be installed are provided.
  • Clusters C9 to C12 will be described with reference to FIGS. 19 and 20.
  • the cluster C9 is connected to the cluster C10 via the load lock chamber B9.
  • the cluster C10 is connected to the cluster C11 via the load lock chamber B10.
  • the cluster C11 is connected to the cluster C12 via the load lock chamber B11.
  • the cluster C12 is connected to the cluster C13 (see FIG. 20) via the load lock chamber B12.
  • cluster C9 to C12 The basic configuration of clusters C9 to C12 is the same as that of clusters C1 to C4, cluster C9 corresponds to cluster C1, cluster C10 corresponds to cluster C2, cluster C11 corresponds to cluster C3, and clusters. C12 corresponds to cluster C4.
  • the load chamber LD in the cluster C1 is replaced with the load lock chamber B8 in the cluster C9.
  • the load lock room B9 corresponds to the load lock room B1
  • the load lock room B10 corresponds to the load lock room B2
  • the load lock room B11 corresponds to the load lock room B3
  • the load lock room B12 corresponds to the load lock room B4. Corresponds to.
  • Cluster C9 and cluster C11 have a normal pressure process device A.
  • the cluster C9 has a transfer chamber TF9 and normal pressure process devices A (normal pressure process devices A15 and A16) that mainly perform the process under normal pressure.
  • the cluster C11 has a transfer chamber TF11 and a normal pressure process device A (normal pressure process devices A17 to A21).
  • the transfer chamber TF9 is connected to the load lock chamber B8 via a gate valve. Further, it is connected to the load lock chamber B9 via another gate valve.
  • a transfer device 70 g is provided in the transfer chamber TF9. The transfer device 70 g can transfer the substrate from the load lock chamber B8 to the normal pressure process device A. Further, the substrate taken out from the normal pressure process apparatus A can be carried out to the load lock chamber B9.
  • the transfer chamber TF11 is connected to the load lock chamber B10 via a gate valve. Further, it is connected to the load lock chamber B11 via another gate valve.
  • the transfer chamber TF11 is provided with a transfer device 70h.
  • the transfer device 70h can transfer the substrate from the load lock chamber B10 to the normal pressure process device A. Further, the substrate taken out from the normal pressure process apparatus A can be carried out to the load lock chamber B11.
  • Cluster C10 and cluster C12 have a vacuum process device V.
  • the cluster C10 has a transfer chamber TF10 and a vacuum process device V (vacuum process devices V13 to V16).
  • the cluster C12 has a transfer chamber TF12 and a vacuum process apparatus V (vacuum process apparatus V17, V18).
  • the transfer chamber TF10 is connected to the load lock chamber B9 via a gate valve. Further, it is connected to the load lock chamber B10 via another gate valve.
  • the transfer chamber TF10 is provided with a transfer device 71c and a substrate transfer device 52c.
  • the substrate transfer device 52c has a stage 83c and transfer devices 72e and 72f.
  • a mask jig 61 can be installed on the stage 83c.
  • the transfer device 71c can transfer the substrate mounted on the mask jig 61 to each vacuum process device V. Further, the stage 83c can be moved in the X direction, the Y direction, and the ⁇ direction.
  • the transfer device 72e can be mounted on the mask jig 61 by reversing the substrate installed in the load lock chamber B9. Further, the transfer device 72f can reverse the substrate taken out from the mask jig 61 and carry it out to the load lock chamber B10.
  • the transfer chamber TF12 is connected to the load lock chamber B11 via a gate valve. Further, it is connected to the load lock chamber B12 via another gate valve.
  • the transfer chamber TF12 is provided with a transfer device 70i.
  • the transfer device 70i can transfer the substrate from the load lock chamber B11 to the vacuum process device V and carry it out to the load lock chamber B12.
  • stages 80e and 80f on which the substrate can be installed on the pin are provided. Further, in the load lock chambers B11 and B12, stages 81e and 81f on which the substrate can be installed are provided.
  • Clusters C13 and C14 will be described with reference to FIG.
  • the cluster C13 is connected to the cluster C14 via the load lock chamber B13.
  • the description common to the clusters C1, C2 and the like will be omitted.
  • Cluster C13 has a normal pressure process device A.
  • the cluster C13 has a transfer chamber TF13 and normal pressure process devices A (normal pressure process devices A22 and A23) that mainly perform processes under normal pressure.
  • an etching device, a baking device, or the like can be applied.
  • a wet etching device, a hot plate type baking device, or the like can be used.
  • the baking device may be a vacuum baking device.
  • the transfer chamber TF13 is connected to the load lock chamber B12 via a gate valve. Further, it is connected to the load lock chamber B13 via another gate valve.
  • a transfer device 70j is provided in the transfer chamber TF13. The transfer device 70j can transfer the substrate from the load lock chamber B12 to the normal pressure process device A. Further, the substrate taken out from the normal pressure process apparatus A can be carried out to the load lock chamber B13.
  • a film forming device such as a vapor deposition device, a sputtering device, a CVD device, and an ALD device, a facing substrate bonding device, and the like can be applied.
  • the load lock chamber B13 is provided with a vacuum pump VP and a valve for introducing an inert gas. Therefore, the load lock chamber B13 can be controlled to a reduced pressure or an inert gas atmosphere.
  • the transfer chamber TF14 is connected to the load lock chamber B13 via a gate valve. It is also connected to the unload chamber ULD via another gate valve.
  • the transfer chamber TF14 is provided with a transfer device 70k.
  • the transfer device 70k can transfer the substrate from the load lock chamber B13 to the vacuum process device V. Further, the substrate taken out from the vacuum process apparatus V can be carried out to the unload chamber ULD.
  • clusters C1 to C4 form an organic EL element that emits light of the first color
  • clusters C5 to C8 form an organic EL element that emits light of the second color
  • clusters C9 to C12 form a third organic EL element.
  • a continuous process can be performed in an atmosphere-controlled device until an organic EL element that emits colored light is formed, unnecessary elements are removed by the cluster C13, and a protective film is formed by the cluster C14. Details of these steps will be described later.
  • FIG. 21 is a block diagram illustrating a manufacturing apparatus for a light emitting device different from that in FIG.
  • the manufacturing apparatus shown in FIG. 21 is an example having clusters C1, C2, C3, C4, C6, C7, C8, C10, C11, C12, C13, and C14. The configuration is omitted.
  • Clusters C1, C2, C3, C4, C6, C7, C8, C10, C11, C12, C13, and C14 are connected in order, and the substrate 60a inserted into the cluster C1 is the substrate 60b on which the light emitting device is formed. Can be taken out from.
  • clusters C5 and C9 have a cleaning device and a baking device.
  • the steps prior to the cleaning step are etching (dry etching) and ashing steps. If the residual gas components, residues, deposits, etc. in these steps do not adversely affect the subsequent steps, the cleaning step can be omitted. Further, when the cleaning step is omitted, it is not necessary to consider the residual moisture of the substrate and the like, so that the baking step can also be omitted. Therefore, in some cases, the configuration of FIG. 21 may be obtained by omitting the clusters C5 and C9 from the manufacturing apparatus shown in FIG. By omitting the clusters C5 and C9, the total number of clusters and the number of load lock chambers can be reduced.
  • the configuration of clusters C1 to C4 can be the same as the configurations shown in FIGS. 17 and 18.
  • the cluster C4 is connected to the cluster C6 via the load lock chamber B5.
  • the stage 80c may be configured to self-propell along the rail 87 as shown in FIG.
  • the configuration in which the stage self-propells along the rail can be applied to other stages in the configuration example 2, but the description thereof will be omitted.
  • Clusters C6, C7, C8, C10 will be described with reference to FIGS. 22 and 23.
  • the cluster C6 is connected to the cluster C7 via the load lock chamber B6.
  • the cluster C7 is connected to the cluster C8 via the load lock chamber B7.
  • the cluster C8 is connected to the cluster C10 via the load lock chamber B9.
  • the cluster C10 is connected to the cluster C11 (see FIG. 20) via the load lock chamber B10.
  • the transfer chamber TF6 included in the cluster C6 is connected to the load lock chamber B5 via a gate valve. Further, it is connected to the load lock chamber B6 via another gate valve.
  • the transfer chamber TF6 is provided with a transfer device 71b and a substrate transfer device 52b.
  • the substrate transfer device 52b has a stage 83b and transfer devices 72c and 72d.
  • a mask jig 61 can be installed on the stage 83b.
  • the transfer device 71b can transfer the substrate mounted on the mask jig 61 to each vacuum process device V. Further, the stage 83b can be moved in the X direction, the Y direction, and the ⁇ direction.
  • the transfer device 72c can be mounted on the mask jig 61 by reversing the substrate installed in the load lock chamber B5. Further, the transfer device 72b can reverse the substrate taken out from the mask jig 61 and carry it out to the load lock chamber B6.
  • the transfer chamber TF7 included in the cluster C7 is connected to the load lock chamber B6 via a gate valve. Further, it is connected to the load lock chamber B7 via another gate valve.
  • the transfer chamber TF7 is provided with a transfer device 70e.
  • the transfer device 70e can transfer the substrate from the load lock chamber B6 to the normal pressure process device A. Further, the substrate taken out from the normal pressure process apparatus A can be carried out to the load lock chamber B7.
  • the transfer chamber TF8 included in the cluster C8 is connected to the load lock chamber B7 via a gate valve. Further, it is connected to the load lock chamber B9 via another gate valve.
  • the transfer chamber TF8 is provided with a transfer device 70f.
  • the transfer device 70f can transfer the substrate from the load lock chamber B7 to the vacuum process device V. Further, the substrate taken out from the vacuum process device V can be carried out to the load lock chamber B9.
  • the transfer chamber TF10 included in the cluster C10 is connected to the load lock chamber B9 via a gate valve. Further, it is connected to the load lock chamber B10 via another gate valve.
  • the transfer chamber TF10 is provided with a transfer device 71c and a substrate transfer device 52c.
  • the substrate transfer device 52c has a stage 83c and transfer devices 72e and 72f.
  • a mask jig 61 can be installed on the stage 83b.
  • the transfer device 71c can transfer the substrate mounted on the mask jig 61 to each vacuum process device V. Further, the stage 83c can be moved in the X direction, the Y direction, and the ⁇ direction.
  • the transfer device 72e can be mounted on the mask jig 61 by reversing the substrate installed in the load lock chamber B9. Further, the transfer device 72f can reverse the substrate taken out from the mask jig 61 and carry it out to the load lock chamber B10.
  • Clusters C11, C12, C13, C14 The configuration of the clusters C11 to C14 can be the same as the configuration shown in FIG.
  • FIG. 24A is a diagram illustrating a substrate transfer device 52a included in the cluster C2.
  • the substrate transfer device 52a includes a transfer device 72a, a stage 83a, and a transfer device 72b.
  • the chamber wall, gate valve, etc. are omitted.
  • the operations of the substrate transfer device 52b and the substrate transfer device 52c having the same configuration as the substrate transfer device 52a can be the same as described below.
  • the configuration of the transport device 72a is as described above. Further, the transport device 72b also has a similar configuration.
  • the stage 83a is fixed on a plurality of moving mechanisms.
  • the moving mechanism can be, for example, a combination of the X-axis moving mechanism 84x, the Y-axis moving mechanism 84y, and the ⁇ -axis moving mechanism 84 ⁇ .
  • the Y-axis movement mechanism 84y is fixed to the X-axis movement mechanism 84x
  • the ⁇ -axis movement mechanism 84 ⁇ is fixed to the Y-axis movement mechanism 84y
  • the stage 83a is fixed to the ⁇ -axis movement mechanism 84 ⁇ .
  • the substrate 60 can be mounted on the counterbore portion 62 above the mask jig 61 installed on the stage 83a.
  • the mask jig 61 has an opening and a lower counterbore portion in addition to the upper counterbore portion 62.
  • the transfer device 72a has a substrate rotation mechanism 98 that rotates the substrate fixing portion 96.
  • a circuit or the like is provided in advance on the surface of the substrate 60, and the substrate 60 and the mask jig 61 are brought into close contact with each other so as not to form a film in an unnecessary region. Therefore, when the substrate 60 is mounted on the mask jig 61, the substrate rotation mechanism 98 aligns the pattern provided in advance on the substrate 60 with the opening of the mask jig 61 in the ⁇ direction (see FIG. 24B).
  • the camera 86 used for the alignment can be provided on the stage 83a (see FIG. 26B).
  • the size of the mask jig 61 and the number of substrates 60 to be mounted may be determined according to the purpose. If the length of the arm of the transport device 72a is not sufficient, the stage 83a is rotated by the ⁇ -axis moving mechanism 84 ⁇ to rotate the substrate 83a. The wearing position of 60 may be brought closer to the transfer device 72a (see FIGS. 24C and 25A). If the length of the arm of the transport device 72a is sufficiently long, the ⁇ -axis movement mechanism 84 ⁇ may not be provided. Further, the X-axis moving mechanism 84x and the Y-axis moving mechanism 84y can be eliminated.
  • a film forming step is performed in the cluster C2.
  • the mask jig 61 is returned to the stage 83a.
  • the substrate 60 for which the film forming process has been completed is taken out from the mask jig 61 using the transfer device 72b (see FIG. 25B).
  • the substrate is inverted by the transfer device 72b (see FIG. 25C).
  • the transfer device 71a is used for transfer to the vacuum process device V that performs the film forming process (see FIG. 26A).
  • the transport device 71a has an elevating mechanism, an arm, and a hand portion. Further, the stage 83a is provided with a pusher pin 85. After raising the mask jig 61 with the pusher pin 85, the hand portion of the transport device 71a is inserted between the stage 83a and the mask jig 61, and the pusher pin 85 is lowered or the hand portion is raised to raise the hand. A mask jig 61 can be placed on the portion (see FIG. 26B).
  • the stage 83a is provided with a camera 86 in addition to the pusher pin 85.
  • the camera 86 is provided at a position overlapping the opening of the mask jig 61. Therefore, the alignment operation can be performed while checking the opening of the mask jig 61 and the pattern provided on the substrate 60 with the camera 86.
  • FIG. 27A shows a perspective sectional view of the line segments A1-A2 (see FIG. 26B) in a state where the mask jig 61 is placed on the hand portion of the transport device 71a. Further, a cross-sectional view of only the mask jig 61 is shown in FIG. 27B.
  • the mask jig 61 has an upper counterbore portion 62 for mounting the substrate 60, a lower counterbore portion 64, and an opening 63.
  • the hand portion of the transport device 71a is in contact with the outside of the lower counterbore portion 64 and not in the vicinity of the opening 63. Therefore, since a certain distance is maintained between the hand portion and the surface of the substrate 60 (the surface on which the film is formed), contamination of the substrate 60 and adhesion of dust due to the hand portion can be suppressed.
  • the substrates 60 may be attached in a staggered arrangement.
  • FIG. 27D a form in which more substrates 60 can be attached may be used. Since the size of the mask jig 61 can be reduced by the staggered arrangement, the size of the film forming apparatus and the like can be reduced, and the area of the entire manufacturing apparatus can be reduced.
  • FIG. 28A is a diagram for explaining the vacuum process apparatus V in which the mask jig 61 is installed, and here exemplifies the film forming apparatus 40.
  • the view is transparent to the chamber wall, and the gate valve is omitted.
  • the film forming apparatus 40 has a film forming material supply unit 42 and a rail 41 for installing the mask jig 61. If the film forming apparatus 40 is a vapor deposition apparatus, the film forming material supply unit 42 is a portion where a vapor deposition source is installed. Further, if the film forming apparatus 40 is a sputtering apparatus, it is a portion where a target (cathode) is installed.
  • the rail 41 is fixed in the chamber, and the mask jig 61 can be stably installed by placing the notch portion of the mask jig 61 on the rail 41. Further, the rail 41 is provided at a position where the film forming material supply unit 42 and the mask jig 61 face each other.
  • the cooling plate 43 shown in FIG. 28B may be installed on the mask jig 61.
  • the cooling plate 43 is provided with a gas introduction port 44 and a gas discharge port 45 for cooling the substrate 60.
  • FIG. 28C is a view in which a part of the cooling plate 43 is cut out.
  • the substrate 60 is in contact with a sealing material 46 (for example, an O-ring) provided on the cooling plate 43. Therefore, a closed space is formed between the substrate 60 and the cooling plate with the sealing material 46 as the side wall.
  • a sealing material 46 for example, an O-ring
  • a cooling gas (inert gas or the like) can be introduced into the closed space from the introduction port 44, and the cooling gas transferred from the substrate 60 can be discharged from the discharge port 45.
  • the substrate 60 can be uniformly cooled by providing a conductance valve at one or both of the introduction port 44 and the discharge port 45 and introducing and discharging the cooling gas while keeping the closed space at a constant pressure.
  • FIG. 28B shows an example in which one valve is provided for each of the introduction port 44 and the discharge port 45 of the two systems, one valve is provided for each of the introduction port 44 and the discharge port 45 of one system.
  • a valve may be provided.
  • the number of the introduction port 44 and the discharge port 45 is not limited, and may be determined in consideration of the cooling capacity and the uniformity of cooling.
  • the step after forming the organic compound is preferably performed at 80 ° C. or lower, preferably 70 ° C. or lower.
  • the substrate 60 since the substrate 60 is exposed to plasma, the substrate 60 may be heated to 100 ° C. or higher. Therefore, it is preferable to cool the substrate 60 by using the cooling plate 43 described above.
  • the expression of cooling is used in the above, it may be paraphrased that the temperature of the substrate is adjusted to a certain temperature or less.
  • a metal mask or a device manufactured by using an FMM may be referred to as a device having an MM (metal mask) structure.
  • a device manufactured without using a metal mask or FMM may be referred to as a device having an MML (metal maskless) structure.
  • SBS Side
  • a light emitting device capable of emitting white light may be referred to as a white light emitting device.
  • the white light emitting device can be a full color display light emitting device by combining with a colored layer (for example, a color filter).
  • the light emitting device can be roughly classified into a single structure and a tandem structure.
  • a device having a single structure preferably has one light emitting unit between a pair of electrodes, and the light emitting unit preferably includes one or more light emitting layers.
  • a light emitting layer may be selected so that the light emitting colors of the two or more light emitting layers have a complementary color relationship. For example, by making the emission color of the first light emitting layer and the emission color of the second light emitting layer have a complementary color relationship, it is possible to obtain a configuration in which the entire light emitting device emits white light. The same applies to a light emitting device having three or more light emitting layers.
  • a device having a tandem structure preferably has two or more light emitting units between a pair of electrodes, and each light emitting unit is preferably configured to include one or more light emitting layers.
  • each light emitting unit is preferably configured to include one or more light emitting layers.
  • the light from the light emitting layers of the plurality of light emitting units may be combined to obtain white light emission.
  • the configuration for obtaining white light emission is the same as the configuration for a single structure.
  • the power consumption of the SBS structure light emitting device can be lower than that of the white light emitting device.
  • the white light emitting device is suitable because the manufacturing process is simpler than that of the light emitting device having an SBS structure, so that the manufacturing cost can be lowered or the manufacturing yield can be increased.
  • the device having a tandem structure may have a configuration (BB, GG, RR, etc.) having a light emitting layer that emits light of the same color.
  • the tandem structure in which light emission is obtained from a plurality of layers requires a high voltage for light emission, but the current value for obtaining the same light emission intensity as that of the single structure is small. Therefore, in the tandem structure, the current stress per light emitting unit can be reduced, and the device life can be extended.
  • FIG. 29 shows a schematic top view of a display device 100 manufactured by using the device for manufacturing a light emitting device according to one aspect of the present invention.
  • the display device 100 includes a plurality of light emitting elements 110R exhibiting red, a light emitting element 110G exhibiting green, and a plurality of light emitting elements 110B exhibiting blue.
  • R, G, and B are designated in the light emitting region of each light emitting element.
  • the light emitting element 110R, the light emitting element 110G, and the light emitting element 110B are arranged in a matrix.
  • FIG. 29 shows a so-called stripe arrangement in which light emitting elements of the same color are arranged in one direction.
  • the arrangement method of the light emitting elements is not limited to this, and an arrangement method such as a delta arrangement or a zigzag arrangement may be applied, or a pentile arrangement may be used.
  • an EL element such as an OLED (Organic Light Emitting Diode) or a QLED (Quantum-dot Light Emitting Diode).
  • the light emitting substances of the EL element include fluorescent substances (fluorescent materials), phosphorescent substances (phosphorescent materials), inorganic compounds (quantum dot materials, etc.), and substances showing thermal activated delayed fluorescence (thermally activated delayed fluorescence). (Thermally activated delayed fluorescence: TADF) material) and the like.
  • FIG. 30A is a schematic cross-sectional view corresponding to the alternate long and short dash line A1-A2 in FIG. 29.
  • FIG. 30A shows a cross section of the light emitting element 110R, the light emitting element 110G, and the light emitting element 110B.
  • the light emitting element 110R, the light emitting element 110G, and the light emitting element 110B are provided on the pixel circuit, respectively, and have a pixel electrode 111 and a common electrode 113.
  • the light emitting element 110R has an EL layer 112R between the pixel electrode 111 and the common electrode 113.
  • the EL layer 112R has a luminescent organic compound that emits light having a peak in at least the red wavelength region.
  • the EL layer 112G included in the light emitting element 110G has a luminescent organic compound that emits light having a peak in at least the green wavelength region.
  • the EL layer 112B included in the light emitting element 110B has a luminescent organic compound that emits light having a peak in at least a blue wavelength region.
  • a structure in which the EL layer 112R, the EL layer 112G, and the EL layer 112B emit light of different colors may be referred to as an SBS (Side By Side) structure.
  • the EL layer 112R, the EL layer 112G, and the EL layer 112B are composed of an electron injection layer, an electron transport layer, a hole injection layer, and a hole transport layer, in addition to a layer containing a luminescent organic compound (light emitting layer), respectively. Of these, one or more may be possessed.
  • the pixel electrode 111 is provided for each light emitting element. Further, the common electrode 113 is provided as a continuous layer common to each light emitting element. A conductive film having transparency to visible light is used for either the pixel electrode 111 or the common electrode 113, and a conductive film having reflection to visible light is used for the other.
  • the pixel electrode 111 translucent and the common electrode 113 reflective, it is possible to make a bottom emission type (bottom emission type) display device, and conversely, the pixel electrode 111 is reflective and the common electrode 113 is transparent. By making it light, it can be used as a top-emission type (top-emission type) display device. By making both the pixel electrode 111 and the common electrode 113 translucent, a double-sided injection type (dual emission type) display device can be obtained. In the present embodiment, an example of manufacturing a top injection type (top emission type) display device will be described.
  • An insulating layer 131 is provided so as to cover the end portion of the pixel electrode 111.
  • the end portion of the insulating layer 131 preferably has a tapered shape.
  • the EL layer 112R, the EL layer 112G, and the EL layer 112B each have a region in contact with the upper surface of the pixel electrode 111 and a region in contact with the surface of the insulating layer 131. Further, the ends of the EL layer 112R, the EL layer 112G, and the EL layer 112B are located on the insulating layer 131.
  • a gap is provided between the two EL layers between the light emitting elements of different colors.
  • the EL layer 112R, the EL layer 112G, and the EL layer 112B are provided so as not to be in contact with each other. As a result, it is possible to preferably prevent an unintended light emission due to a current flowing through the two EL layers adjacent to each other. Therefore, the contrast can be enhanced, and a display device having high display quality can be realized.
  • a protective layer 121 is provided on the common electrode 113 so as to cover the light emitting element 110R, the light emitting element 110G, and the light emitting element 110B.
  • the protective layer 121 has a function of preventing impurities from diffusing into each light emitting element from above.
  • the protective layer 121 has a function of capturing (also referred to as gettering) impurities (typically, impurities such as water and hydrogen) that can enter each light emitting element.
  • the protective layer 121 may have, for example, a single-layer structure or a laminated structure including at least an inorganic insulating film.
  • the inorganic insulating film include an oxide film such as a silicon oxide film, a silicon nitride film, a silicon nitride film, a silicon nitride film, an aluminum oxide film, an aluminum nitride film, and a hafnium oxide film, or a nitride film. ..
  • a semiconductor material such as indium gallium oxide or indium gallium zinc oxide may be used as the protective layer 121.
  • the pixel electrode 111 is electrically connected to either the source or the drain of the transistor 116.
  • the transistor 116 for example, a transistor having a metal oxide in the channel forming region (hereinafter, OS transistor) can be used.
  • OS transistors have higher mobility than amorphous silicon and are excellent in electrical characteristics. Further, the OS transistor does not require a crystallization step in the manufacturing process of polycrystalline silicon, and can be formed by a wiring step or the like. Therefore, the OS transistor can be formed on the transistor 115 (hereinafter, Si transistor) having silicon in the channel forming region formed on the substrate 60 without using a bonding step or the like.
  • the transistor 116 is a transistor that constitutes a pixel circuit.
  • the transistor 115 is a transistor that constitutes a drive circuit of a pixel circuit or the like. That is, since the pixel circuit can be formed on the drive circuit, a display device having a narrow frame can be formed.
  • a metal oxide having an energy gap of 2 eV or more, preferably 2.5 eV or more, and more preferably 3 eV or more can be used.
  • the OS transistor Since the OS transistor has a large energy gap in the semiconductor layer, it exhibits an extremely low off-current characteristic of several yA / ⁇ m (current value per 1 ⁇ m of channel width). Further, the OS transistor has features different from those of the Si transistor such as impact ionization, avalanche breakdown, and short channel effect, and can form a circuit having high withstand voltage and high reliability. In addition, variations in electrical characteristics due to crystallinity non-uniformity, which is a problem with Si transistors, are unlikely to occur with OS transistors.
  • the semiconductor layer of the OS transistor is In-M containing, for example, indium, zinc and M (one or more metals such as indium, titanium, gallium, germanium, yttrium, zirconium, lanthanum, cerium, tin, neodymium or hafnium). It can be a film represented by ⁇ Zn-based oxide.
  • the In—M—Zn-based oxide can be typically formed by a sputtering method. Alternatively, it may be formed by using an ALD (Atomic layer deposition) method.
  • the atomic number ratio of the metal element of the sputtering target used for forming the In—M—Zn-based oxide by the sputtering method preferably satisfies In ⁇ M and Zn ⁇ M.
  • the atomic number ratio of the semiconductor layer to be formed includes a variation of plus or minus 40% of the atomic number ratio of the metal element contained in the sputtering target.
  • an oxide semiconductor having a low carrier density is used as the semiconductor layer.
  • the semiconductor layer is 1 ⁇ 10 17 / cm 3 or less, preferably 1 ⁇ 10 15 / cm 3 or less, more preferably 1 ⁇ 10 13 / cm 3 or less, more preferably 1 ⁇ 10 11 / cm 3 or less, More preferably, an oxide semiconductor having a carrier density of less than 1 ⁇ 10 10 / cm 3 and a carrier density of 1 ⁇ 10 -9 / cm 3 or more can be used.
  • Such oxide semiconductors are referred to as high-purity intrinsic or substantially high-purity intrinsic oxide semiconductors. It can be said that the oxide semiconductor is an oxide semiconductor having a low defect level density and stable characteristics.
  • an oxide semiconductor having an appropriate composition may be used according to the required semiconductor characteristics and electrical characteristics (field effect mobility, threshold voltage, etc.) of the transistor. Further, in order to obtain the required semiconductor characteristics of the transistor, it is preferable that the carrier density and impurity concentration of the semiconductor layer, the defect density, the atomic number ratio between the metal element and oxygen, the interatomic distance, the density and the like are appropriate. ..
  • FIG. 30A illustrates a configuration in which the light emitting layers of the light emitting elements of R, G, and B are different from each other, but the present invention is not limited to this.
  • an EL layer 112W that emits white light is provided, and colored layers 114R (red), 114G (green), and 114B (blue) are provided so as to be superimposed on the EL layer 112W to provide a light emitting element 110R.
  • a method of forming 110G and 110B and coloring them may be used.
  • the EL layer 112W can have, for example, a tandem structure in which the EL layers that emit light of each of R, G, and B are connected in series. Alternatively, a structure in which light emitting layers that emit light of each of R, G, and B are connected in series may be used.
  • the colored layers 114R, 114G, and 114B for example, red, green, and blue color filters can be used.
  • a pixel circuit may be formed by the transistor 117 included in the substrate 60, and one of the source or drain of the transistor 117 may be electrically connected to the pixel electrode 111.
  • Example of manufacturing method> an example of a method for manufacturing a light emitting device that can be manufactured by the manufacturing apparatus according to one aspect of the present invention will be described.
  • the light emitting device included in the display device 100 shown in the above configuration example will be described as an example.
  • FIGS. 31A to 33E are schematic cross-sectional views of the method for manufacturing a light emitting device illustrated below in each step.
  • the transistor 116 which is a component of the pixel circuit and the transistor 115 which is a component of the drive circuit shown in FIG. 30A are omitted.
  • the thin film (insulating film, semiconductor film, conductive film, etc.) constituting the display device can be formed by using a sputtering method, a chemical vapor deposition (CVD) method, a vacuum vapor deposition method, an atomic layer deposition (ALD) method, or the like.
  • CVD method include a plasma chemical vapor deposition (PECVD: Plasma Enhanced CVD) method and a thermal CVD method.
  • PECVD Plasma vapor deposition
  • thermal CVD there is an organometallic chemical vapor deposition (MOCVD: Metal Organic CVD) method.
  • the manufacturing apparatus of one aspect of the present invention can have an apparatus for forming a thin film by the above method.
  • the manufacturing apparatus of one aspect of the present invention can have an apparatus for forming a thin film by the above method. Further, the manufacturing apparatus according to one aspect of the present invention may have an apparatus for applying the resin by the above method.
  • the thin film when processing the thin film constituting the display device, a photolithography method or the like can be used.
  • the thin film may be processed by using the nanoimprint method.
  • a method of directly forming an island-shaped thin film by a film forming method using a shielding mask may be used in combination.
  • the light used for exposure for example, i-line (wavelength 365 nm), g-line (wavelength 436 nm), h-line (wavelength 405 nm), or a mixture of these can be used.
  • ultraviolet rays, KrF laser light, ArF laser light, or the like can also be used.
  • the exposure may be performed by the immersion exposure technique.
  • extreme ultraviolet (EUV: Extreme Ultra-violet) light or X-rays may be used.
  • an electron beam can be used instead of the light used for exposure. It is preferable to use extreme ultraviolet light, X-rays, or an electron beam because extremely fine processing is possible.
  • extreme ultraviolet light, X-rays, or an electron beam because extremely fine processing is possible.
  • a dry etching method, a wet etching method, or the like can be used for etching the thin film.
  • the manufacturing apparatus of one aspect of the present invention can have an apparatus for processing a thin film by the above method.
  • a substrate having at least enough heat resistance to withstand the subsequent heat treatment can be used.
  • a substrate having at least enough heat resistance to withstand the subsequent heat treatment can be used.
  • a glass substrate, a quartz substrate, a sapphire substrate, a ceramic substrate, an organic resin substrate, or the like can be used.
  • a single crystal semiconductor substrate made of silicon, silicon carbide or the like, a polycrystalline semiconductor substrate, a compound semiconductor substrate such as silicon germanium, or a semiconductor substrate such as an SOI substrate can be used.
  • the substrate 60 it is preferable to use a substrate in which a semiconductor circuit including a semiconductor element such as a transistor is formed on the semiconductor substrate or an insulating substrate.
  • the semiconductor circuit preferably comprises, for example, a pixel circuit, a gate line drive circuit (gate driver), a source line drive circuit (source driver), and the like.
  • gate driver gate line drive circuit
  • source driver source driver
  • an arithmetic circuit, a storage circuit, and the like may be configured.
  • pixel circuit and pixel electrode 111 a plurality of pixel circuits are formed on the substrate 60, and pixel electrodes 111 are formed in each pixel circuit.
  • a conductive film to be the pixel electrode 111 is formed, a resist mask is formed by a photolithography method, and an unnecessary portion of the conductive film is removed by etching. After that, the pixel electrode 111 can be formed by removing the resist mask.
  • the pixel electrode 111 it is preferable to use a material (for example, silver or aluminum) having as high a reflectance as possible in the entire wavelength range of visible light.
  • the pixel electrode 111 made of the material can be said to be an electrode having light reflectivity. As a result, not only the light extraction efficiency of the light emitting element can be improved, but also the color reproducibility can be improved.
  • the end portion of the pixel electrode 111 is covered to form the insulating layer 131 (see FIG. 31A).
  • the insulating layer 131 an organic insulating film or an inorganic insulating film can be used. It is preferable that the end of the insulating layer 131 has a tapered shape in order to improve the step covering property of the later EL film. In particular, when an organic insulating film is used, it is preferable to use a photosensitive material because the shape of the end portion can be easily controlled depending on the exposure and development conditions.
  • the EL film 112Rf has a film containing at least a red-emitting organic compound.
  • the electron injection layer, the electron transport layer, the charge generation layer, the hole transport layer, and the hole injection layer may be laminated.
  • the EL film 112Rf can be formed by, for example, a vapor deposition method, a sputtering method, or the like. Not limited to this, the above-mentioned film forming method can be appropriately used.
  • a protective film 125Rf which will later become a protective layer 125R, is formed on the EL film 112Rf (see FIG. 31B).
  • the protective layer 125R is a temporary protective layer used to prevent deterioration and disappearance of the EL layer 112R in the manufacturing process of the organic EL element, and is also called a sacrificial layer.
  • the protective film 125Rf is preferably formed by a film forming method that has a high barrier property against moisture and the like and does not easily damage the organic compound during film formation. Further, it is preferable to use a material that can use an etchant that does not easily damage the organic compound in the etching step.
  • an inorganic film such as a metal film, an alloy film, a metal oxide film, a semiconductor film, or an inorganic insulating film can be used.
  • a resist mask 143a is formed on the pixel electrode 111 corresponding to the light emitting element 110R (see FIG. 31C).
  • the resist mask 143a can be formed by a lithography process.
  • the protective film 125Rf and the EL film 112Rf are etched using the resist mask 143a as a mask to form the protective layer 125R and the EL layer 112R in an island shape (see FIG. 31D).
  • a dry etching method or a wet etching method can be used in the etching step.
  • the resist mask 143a is removed by ashing or a resist stripping solution.
  • an EL film 112Gf which will later become an EL layer 112G, is formed on the exposed pixel electrodes 111 and the insulating layer 131, and on the protective layer 125R.
  • the EL film 112Gf has a film containing at least a green luminescent organic compound.
  • the electron injection layer, the electron transport layer, the charge generation layer, the hole transport layer, and the hole injection layer may be laminated.
  • a protective film 125Gf which will later become a protective layer 125G, is formed on the EL film 112Gf (see FIG. 32A).
  • the protective film 125Gf can be formed of the same material as the protective film 125Rf.
  • a resist mask 143b is formed on the pixel electrode 111 corresponding to the light emitting element 110G (see FIG. 32B).
  • the resist mask 143b can be formed by a lithography process.
  • the protective film 125Gf and the EL film 112Gf are etched using the resist mask 143b as a mask to form the protective layer 125G and the EL layer 112G in an island shape (see FIG. 32C).
  • a dry etching method or a wet etching method can be used in the etching step.
  • the resist mask 143b is removed by ashing or a resist stripping solution.
  • an EL film 112Bf which will later become an EL layer 112B, is formed on the exposed pixel electrodes 111 and the insulating layer 131, and on the protective layers 125R and 125G.
  • the EL film 112Bf has a film containing at least a blue-emitting organic compound.
  • the electron injection layer, the electron transport layer, the charge generation layer, the hole transport layer, and the hole injection layer may be laminated.
  • a protective film 125Bf which will later become a protective layer 125B, is formed on the EL film 112Bf (see FIG. 32D).
  • the protective film 125Bf can be formed of the same material as the protective film 125Rf.
  • a resist mask 143c is formed on the pixel electrode 111 corresponding to the light emitting element 110B (see FIG. 33A).
  • the resist mask 143b can be formed by a lithography process.
  • the protective film 125Bf and the EL film 112Bf are etched using the resist mask 143c as a mask to form the protective layer 125B and the EL layer 112G in an island shape (see FIG. 33B).
  • a dry etching method or a wet etching method can be used in the etching step.
  • the resist mask 143b is removed by ashing or a resist stripping solution (see FIG. 33C).
  • a conductive layer serving as a common electrode 113 of the organic EL element is formed on the EL layer 112R, the EL layer 112G, the EL layer 112B, and the insulating layer 131 exposed in the previous step.
  • the common electrode 113 includes a thin metal film (for example, an alloy of silver and magnesium) that transmits light emitted by the light emitting layer, a translucent conductive film (for example, indium tin oxide, or indium, gallium, zinc, etc.). Any single film (such as oxides containing the above) or a laminated film of both can be used.
  • the common electrode 113 made of such a film can be said to be an electrode having light transmission.
  • a thin-film deposition device and / or a sputtering device can be used in the step of forming the conductive layer to be the common electrode 113.
  • an EL layer having any of the functions of an electron injection layer, an electron transport layer, a charge generation layer, a hole transport layer, and a hole injection layer is used as a common layer. It may be provided on the layer 112R, the EL layer 112G, and the EL layer 112B.
  • the light emitted from the light emitting layer can be emitted to the outside through the common electrode 113. That is, a top emission type light emitting element is formed.
  • the protective layer 121 is formed on the common electrode 113 (see FIG. 33E).
  • a sputtering device, a CVD device, an ALD device, or the like can be used in the step of forming the protective layer.
  • FIG. 34 shows an example of a manufacturing apparatus that can be used in the manufacturing process from the formation of the EL film 112Rf to the formation of the protective layer 121 described above.
  • the basic configuration of the manufacturing apparatus shown in FIG. 34 is the same as that of the manufacturing apparatus shown in FIG.
  • FIG. 34 is a perspective view schematically showing the entire manufacturing apparatus, and the utility, the gate valve, and the like are not shown. Further, the transfer chambers TF1 to TF14 and the load lock chambers B1 to B13 are shown as a visualization of the inside for clarification.
  • Cluster C1 has a load chamber LD and normal pressure process devices A1 and A2.
  • the normal pressure process device A1 can be a cleaning device, and the normal pressure process device A2 can be a baking device.
  • a cleaning step before forming the EL film 112Rf is performed.
  • Cluster C2 has vacuum process devices V1 to V4.
  • the vacuum process devices V1 to V4 are a vapor deposition device for forming the EL film 112Rf and a film forming device for forming the protective film 125Rf (for example, a thin film deposition device, an ALD device, etc.).
  • the vacuum process device V1 can be used as a device for forming an organic compound layer to be a light emitting layer (R).
  • the vacuum process devices V2 and V3 can be assigned to a device for forming an organic compound layer such as an electron injection layer, an electron transport layer, a charge generation layer, a hole transport layer, and a hole injection layer.
  • the vacuum process device V4 can be assigned to the device for forming the protective film 125Rf.
  • Cluster C3 has atmospheric process devices A3 to A7.
  • the normal pressure process devices A3 to A7 can be devices used in the lithography process.
  • the normal pressure process device A3 is a resin (photoresist) coating device
  • the normal pressure process device A4 is a prebaking device
  • the normal pressure process device A5 is an exposure device
  • the normal pressure process device A6 is a developing device
  • the normal pressure process device A7 is a post. It can be a baking device.
  • the atmospheric pressure process apparatus A5 may be used as a nanoimprint apparatus.
  • Cluster C4 has vacuum process devices V5 and V6.
  • the vacuum process device V5 can be a dry etching device that forms the EL layer 112R.
  • the vacuum process device V6 can be an ashing device that removes the resist mask.
  • Cluster C5 has atmospheric process devices A8 and A9.
  • the normal pressure process device A8 can be a cleaning device, and the normal pressure process device A9 can be a baking device.
  • a cleaning step before forming the EL film 112Gf is performed.
  • Cluster C6 has vacuum process devices V7 to V10.
  • the vacuum process devices V7 to V10 are a vapor deposition device for forming the EL film 112Gf and a film forming device (for example, a sputtering device) for forming the protective film 125Gf.
  • the vacuum process device V7 can be used as a device for forming an organic compound layer to be a light emitting layer (G).
  • the vacuum process devices V8 and V9 can be assigned to a device for forming an organic compound layer such as an electron injection layer, an electron transport layer, a charge generation layer, a hole transport layer, and a hole injection layer.
  • the vacuum process device V10 can be assigned to the device for forming the protective film 125 Gf.
  • Cluster C7 has atmospheric process devices A10 to A14.
  • the normal pressure process devices A10 to A14 can be devices used in the lithography process.
  • the allocation of devices can be the same as for cluster C3.
  • Cluster C8 has vacuum process devices V11 and V12.
  • the vacuum process device V11 can be a dry etching device that forms the EL layer 112G.
  • the vacuum process device V12 can be an ashing device that removes the resist mask.
  • Cluster C9 has atmospheric process devices A15 and A16.
  • the normal pressure process device A15 can be a cleaning device, and the normal pressure process device A16 can be a baking device.
  • a cleaning step before forming the EL film 112Bf is performed.
  • Cluster C10 has vacuum process devices V13 to V16.
  • the vacuum process devices V13 to V16 are a vapor deposition device for forming the EL film 112Bf and a film forming device (for example, a sputtering device) for forming the protective film 125Bf.
  • the vacuum process device V13 can be used as a device for forming an organic compound layer to be a light emitting layer (G).
  • the vacuum process devices V14 and V15 can be assigned to a device for forming an organic compound layer such as an electron injection layer, an electron transport layer, a charge generation layer, a hole transport layer, and a hole injection layer.
  • the vacuum process device V16 can be assigned to the device for forming the protective film 125Bf.
  • Cluster C11 has atmospheric process devices A17 to A21.
  • the normal pressure process devices A17 to A21 can be devices used in the lithography process.
  • the allocation of devices can be the same as for cluster C3.
  • Cluster C12 has vacuum process devices V17, V18.
  • the vacuum process device V17 can be a dry etching device that forms the EL layer 112B.
  • the vacuum process device V18 can be an ashing device that removes the resist mask.
  • Cluster C13 has atmospheric process devices A22 and A23.
  • the normal pressure process device A22 can be a wet etching device, and the normal pressure process device A23 can be a baking device.
  • the etching steps of the protective layers 125R, 125G, and 125B are performed.
  • Cluster C14 has vacuum process devices V19 to V21 and an unload chamber ULD.
  • the vacuum process device V19 can be assigned to a device for forming an organic compound layer (for example, a vapor deposition device) of any one of an electron injection layer, an electron transport layer, a charge generation layer, a hole transport layer, and a hole injection layer.
  • the vacuum process device V20 can be a film forming device (for example, a sputtering device) that forms the common electrode 113.
  • the vacuum process device V21 can be a film forming device (for example, a sputtering device) that forms the protective layer 121.
  • the vacuum process device V may be separately provided, a plurality of different film forming devices (for example, a vapor deposition device, an ALD device, etc.) may be provided, and the common electrode 113 and the protective layer 121 may be formed of a laminated film.
  • a vapor deposition device for example, a vapor deposition device, an ALD device, etc.
  • the common electrode 113 and the protective layer 121 may be formed of a laminated film.
  • Table 1 summarizes the processes using the manufacturing apparatus shown in FIG. 34, the processing apparatus, and the elements corresponding to the above-mentioned manufacturing method. The description of the loading and unloading of the substrate into the load lock chamber and each device is omitted.
  • Step No. 1 shown in Table 1.
  • Step No. 1 to step No. It has a function to automatically process up to 47.
  • FIG. 35 shows an example of a manufacturing apparatus different from the manufacturing apparatus example 1.
  • the basic configuration of the manufacturing apparatus shown in FIG. 35 is the same as that of the manufacturing apparatus shown in FIG. 34.
  • FIG. 35 is a perspective view schematically showing the entire manufacturing apparatus, and the utility, the gate valve, and the like are not shown. Further, the transfer chambers TF1 to TF14 and the load lock chambers B1 to B13 are shown as a visualization of the inside for clarification.
  • Cluster C1 has a load chamber LD and normal pressure process devices A1 and A2.
  • the normal pressure process device A1 can be a cleaning device, and the normal pressure process device A2 can be a baking device.
  • a cleaning step before forming the EL film 112Rf is performed.
  • Cluster C2 has a substrate transfer device 52a and vacuum process devices V1 to V4.
  • the vacuum process devices V1 to V4 are a vapor deposition device for forming the EL film 112Rf and a film forming device for forming the protective film 125Rf (for example, a thin film deposition device, an ALD device, etc.).
  • the vacuum process device V1 can be used as a device for forming an organic compound layer to be a light emitting layer (R).
  • the vacuum process devices V2 and V3 can be assigned to a device for forming an organic compound layer such as an electron injection layer, an electron transport layer, a charge generation layer, a hole transport layer, and a hole injection layer.
  • the vacuum process device V4 can be assigned to the device for forming the protective film 125Rf.
  • Cluster C3 has atmospheric process devices A3 to A7.
  • the normal pressure process devices A3 to A7 can be devices used in the lithography process.
  • the normal pressure process device A3 is a resin (photoresist) coating device
  • the normal pressure process device A4 is a prebaking device
  • the normal pressure process device A5 is an exposure device
  • the normal pressure process device A6 is a developing device
  • the normal pressure process device A7 is a post. It can be a baking device.
  • the atmospheric pressure process apparatus A5 may be used as a nanoimprint apparatus.
  • Cluster C4 has vacuum process devices V5 and V6.
  • the vacuum process device V5 can be a dry etching device that forms the EL layer 112R.
  • the vacuum process device V6 can be an ashing device that removes the resist mask.
  • Cluster C5 has atmospheric process devices A8 and A9.
  • the normal pressure process device A8 can be a cleaning device, and the normal pressure process device A9 can be a baking device.
  • a cleaning step before forming the EL film 112Gf is performed.
  • the cluster C6 has a substrate transfer device 52b and vacuum process devices V7 to V10.
  • the vacuum process devices V7 to V10 are a vapor deposition device for forming the EL film 112Gf and a film forming device (for example, a sputtering device) for forming the protective film 125Gf.
  • the vacuum process device V7 can be used as a device for forming an organic compound layer to be a light emitting layer (G).
  • the vacuum process devices V8 and V9 can be assigned to a device for forming an organic compound layer such as an electron injection layer, an electron transport layer, a charge generation layer, a hole transport layer, and a hole injection layer.
  • the vacuum process device V10 can be assigned to the device for forming the protective film 125 Gf.
  • Cluster C7 has atmospheric process devices A10 to A14.
  • the normal pressure process devices A10 to A14 can be devices used in the lithography process.
  • the allocation of devices can be the same as for cluster C3.
  • Cluster C8 has vacuum process devices V11 and V12.
  • the vacuum process device V11 can be a dry etching device that forms the EL layer 112G.
  • the vacuum process device V12 can be an ashing device that removes the resist mask.
  • Cluster C9 has atmospheric process devices A15 and A16.
  • the normal pressure process device A15 can be a cleaning device, and the normal pressure process device A16 can be a baking device.
  • a cleaning step before forming the EL film 112Bf is performed.
  • the cluster C10 has a substrate transfer device 52c and vacuum process devices V13 to V16.
  • the vacuum process devices V13 to V16 are a vapor deposition device for forming the EL film 112Bf and a film forming device (for example, a sputtering device) for forming the protective film 125Bf.
  • the vacuum process device V13 can be used as a device for forming an organic compound layer to be a light emitting layer (G).
  • the vacuum process devices V14 and V15 can be assigned to a device for forming an organic compound layer such as an electron injection layer, an electron transport layer, a charge generation layer, a hole transport layer, and a hole injection layer.
  • the vacuum process device V16 can be assigned to the device for forming the protective film 125Bf.
  • Cluster C11 has atmospheric process devices A17 to A21.
  • the normal pressure process devices A17 to A21 can be devices used in the lithography process.
  • the allocation of devices can be the same as for cluster C3.
  • Cluster C12 has vacuum process devices V17, V18.
  • the vacuum process device V17 can be a dry etching device that forms the EL layer 112B.
  • the vacuum process device V18 can be an ashing device that removes the resist mask.
  • Cluster C13 has atmospheric process devices A22 and A23.
  • the normal pressure process device A22 can be a wet etching device, and the normal pressure process device A23 can be a baking device.
  • the etching steps of the protective layers 125R, 125G, and 125B are performed.
  • Cluster C14 has vacuum process devices V19 to V21 and an unload chamber ULD.
  • the vacuum process device V19 can be assigned to a device for forming an organic compound layer (for example, a vapor deposition device) of any one of an electron injection layer, an electron transport layer, a charge generation layer, a hole transport layer, and a hole injection layer.
  • the vacuum process device V20 can be a film forming device (for example, a sputtering device) that forms the common electrode 113.
  • the vacuum process device V21 can be a film forming device (for example, a sputtering device) that forms the protective layer 121.
  • the vacuum process device V may be separately provided, a plurality of different film forming devices (for example, a vapor deposition device, an ALD device, etc.) may be provided, and the common electrode 113 and the protective layer 121 may be formed of a laminated film.
  • a vapor deposition device for example, a vapor deposition device, an ALD device, etc.
  • the common electrode 113 and the protective layer 121 may be formed of a laminated film.
  • Table 2 summarizes the processes using the manufacturing apparatus shown in FIG. 22, the processing apparatus, and the elements corresponding to the above-mentioned manufacturing method. The description of the loading and unloading of the substrate into the load lock chamber and each device is omitted.
  • the manufacturing apparatus has the steps No. 2 shown in Table 2.
  • Step No. 1 to step No. It has a function to automatically process up to 53.

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