WO2022151184A1

WO2022151184A1 - Phase-change memory cell structure and method for fabricating the same

Info

Publication number: WO2022151184A1
Application number: PCT/CN2021/071821
Authority: WO
Inventors: Jun Liu
Original assignee: Yangtze Advanced Memory Industrial Innovation Center Co., Ltd
Priority date: 2021-01-14
Filing date: 2021-01-14
Publication date: 2022-07-21
Also published as: CN112840459B; CN112840459A

Abstract

Phase-change memory cell structures and methods for fabricating the same are provided. In one example, a memory cell includes a first electrode layer, a selection device formed on the first electrode layer, a first metal layer formed on the selection device, an intermediate electrode layer formed on the first metal layer, a phase-change material formed on the intermediate electrode layer, and a second electrode layer formed on the phase-change material. The intermediate electrode layer and the first metal layer have different conductivities.

Description

PHASE-CHANGE MEMORY CELL STRUCTURE AND METHOD FOR FABRICATING THE SAME

BACKGROUND

The present disclosure relates to phase-change memory (PCM) cell structure and fabrication method thereof.

Planar memory cells are scaled to smaller sizes by improving process technology, circuit design, programming algorithm, and fabrication process. However, as feature sizes of the memory cells approach a lower limit, planar process and fabrication techniques become challenging and costly. As a result, memory density for planar memory cells approaches an upper limit.

A three-dimensional (3D) memory architecture can address the density limitation in planar memory cells. The 3D memory architecture includes a memory array and peripheral devices for controlling signals to and from the memory array. For example, PCM can utilize the difference between the resistivity of the amorphous and the crystalline phase in phase-change materials based on heating and quenching of the phase-change materials electrothermally. PCM array cells can be vertically stacked in 3D to form a 3D PCM.

SUMMARY

PCM devices and methods for forming and operating the same are disclosed herein.

In an example, a memory cell structure includes a first electrode layer, a selection device formed on the first electrode layer, a first metal layer formed on the selection device, an intermediate electrode layer formed on the first metal layer, a phase-change material formed on the intermediate electrode layer, and a second electrode layer formed on the phase-change material. The intermediate electrode layer and the first metal layer have different conductivities.

In another example, a memory device located between a bit line and a word line includes a selection unit, a storage unit, an intermediate electrode formed between the selection unit and the storage unit, and a first metal layer formed between the selection unit and the intermediate electrode. A first conductivity of the first metal layer is higher than a second conductivity of the intermediate electrode.

In still another example, a switching device includes a first electrode, a second electrode formed by amorphous carbon, an ovonic threshold switch (OTS) layer formed between the first electrode and the second electrode, and a first metal layer formed between the OTS layer and the second electrode. A first conductivity of the first metal layer is higher than a second conductivity of the second electrode.

In yet another example, a method for fabricating a memory cell is disclosed. A selection device is formed on a first electrode layer, and a first metal layer is formed on the selection device. An intermediate electrode layer having a different conductivity from the first metal layer is formed on the first metal layer. A phase-change material is formed on the intermediate electrode layer, and a second electrode layer is formed on the phase-change material.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings, which are incorporated herein and form a part of the specification, illustrate aspects of the present disclosure and, together with the description, further serve to explain the present disclosure and to enable a person skilled in the pertinent art to make and use the present disclosure.

FIG. 1 illustrates a perspective view of an exemplary 3D cross-point (XPoint) memory device, according to some aspects of the present disclosure.

FIG. 2 illustrates a side view of a cross-section of an exemplary memory device, according to some aspects of the present disclosure.

FIG. 3 illustrates a side view of a cross-section of an exemplary memory device, according to some aspects of the present disclosure.

FIG. 4 illustrates a side view of a cross-section of an exemplary memory cell structure, according to some aspects of the present disclosure.

FIG. 5 illustrates a side view of a cross-section of an exemplary memory device, according to some aspects of the present disclosure.

FIG. 6 illustrates a side view of a cross-section of an exemplary memory cell structure, according to some aspects of the present disclosure.

FIGs. 7A-7B illustrate a side view of a cross-section of a switch device, according to some aspects of the present disclosure.

FIG. 8 illustrates a flowchart of an exemplary method for fabricating a memory cell, according to some implementations of the present disclosure.

Aspects of the present disclosure will be described with reference to the accompanying drawings.

DETAILED DESCRIPTION

Although specific configurations and arrangements are discussed, it should be understood that this is done for illustrative purposes only. As such, other configurations and arrangements can be used without departing from the scope of the present disclosure. Also, the present disclosure can also be employed in a variety of other applications. Functional and structural features as described in the present disclosures can be combined, adjusted, and modified with one another and in ways not specifically depicted in the drawings, such that these combinations, adjustments, and modifications are within the scope of the present discloses.

In general, terminology may be understood at least in part from usage in context. For example, the term “one or more” as used herein, depending at least in part upon context, may be used to describe any feature, structure, or characteristic in a singular sense or may be used to describe combinations of features, structures or characteristics in a plural sense. Similarly, terms, such as “a, ” “an, ” or “the, ” again, may be understood to convey a singular usage or to convey a plural usage, depending at least in part upon context. In addition, the term “based on” may be understood as not necessarily intended to convey an exclusive set of factors and may, instead, allow for existence of additional factors not necessarily expressly described, again, depending at least in part on context.

It should be readily understood that the meaning of “on, ” “above, ” and “over” in the present disclosure should be interpreted in the broadest manner such that “on” not only means “directly on” something but also includes the meaning of “on” something with an intermediate feature or a layer therebetween, and that “above” or “over” not only means the meaning of “above” or “over” something but can also include the meaning it is “above” or “over” something with no intermediate feature or layer therebetween (i.e., directly on something) .

Further, spatially relative terms, such as “beneath, ” “below, ” “lower, ” “above, ” “upper, ” and the like, may be used herein for ease of description to describe one element or feature’s relationship to another element (s) or feature (s) as illustrated in the figures. The spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. The apparatus may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein may likewise be interpreted accordingly.

As used herein, the term “substrate” refers to a material onto which subsequent material layers are added. The substrate itself can be patterned. Materials added on top of the substrate can be patterned or can remain unpatterned. Furthermore, the substrate can include a wide array of semiconductor materials, such as silicon, germanium, gallium arsenide, indium phosphide, etc. Alternatively, the substrate can be made from an electrically non-conductive material, such as a glass, a plastic, or a sapphire wafer.

As used herein, the term “layer” refers to a material portion including a region with a thickness. A layer can extend over the entirety of an underlying or overlying structure or may have an extent less than the extent of an underlying or overlying structure. Further, a layer can be a region of a homogeneous or inhomogeneous continuous structure that has a thickness less than the thickness of the continuous structure. For example, a layer can be located between any pair of horizontal planes between, or at, a top surface and a bottom surface of the continuous structure. A layer can extend horizontally, vertically, and/or along a tapered surface. A substrate can be a layer, can include one or more layers therein, and/or can have one or more layer thereupon, thereabove, and/or therebelow. A layer can include multiple layers. For example, an interconnect layer can include one or more conductor and contact layers (in which interconnect lines and/or via contacts are formed) and one or more dielectric layers.

As used herein, the term “3D memory device” refers to a semiconductor device with memory cells that can be arranged vertically on a laterally-oriented substrate so that the number of memory cells can be scaled up in the vertical direction with respect to the substrate. As used herein, the term “vertical/vertically” means nominally perpendicular to the lateral surface of a substrate.

A PCM can utilize the difference between the resistivity of the amorphous and the crystalline phase in phase-change materials (e.g., chalcogenide alloys) based on heating and quenching of the phase-change materials electrothermally. The phase-change material in a PCM cell can be located between two electrodes, and electrical currents can be applied to switch the material (or at least a fraction of it that blocks the current path) repeatedly between the two phases to store data. PCM cells can be vertically stacked in 3D to form a 3D PCM. At the reset state, a short high current/voltage is applied to heat up the PCM cell material to melt and quench molten the material into an amorphous high resistance state, which shows electronic threshold switching above a threshold voltage Vt before crystallization steps in. At the set state, a long and medium current/voltage is applied to heat up the PCM cell material to crystallize the amorphous material into a crystalline low resistance state, which is more like a resistor.

3D PCMs include 3D XPoint memory, which stores data based on a change in resistance of the bulk material property (e.g., in a high-resistance state or a low-resistance state) , in conjunction with a stackable cross-point data access array to be bit-addressable. For example, FIG. 1 illustrates a perspective view of an exemplary 3D XPoint memory device 100, according to some aspects of the present disclosure. 3D XPoint memory device 100 has a transistor-less, cross-point architecture that positions memory cells at the intersections of perpendicular conductors, according to some implementations. 3D XPoint memory device 100 includes a plurality of parallel lower bit lines 102 in the same plane and a plurality of parallel upper bit lines 104 in the same plane above lower bit lines 102.3D XPoint memory device 100 also includes a plurality of parallel word lines 106 in the same plane vertically between lower bit lines 102 and upper bit lines 104. As shown in FIG. 1, each lower bit line 102 and each upper bit line 104 extend laterally along the bit line direction in the plan view (parallel to the wafer plane) , and each word line 106 extends laterally along the word line direction in the plan view. Each word line 106 is perpendicular to each lower bit line 102 and each upper bit line 104.

It is noted that x and y axis are included in FIG. 1 to illustrate two orthogonal directions in the wafer plane. The x-direction is the word line direction, and the y-direction is the bit line direction. It is noted that z-axis is also included in FIG. 1 to further illustrate the spatial relationship of the components in 3D XPoint memory device 100. The substrate (not shown) of 3D XPoint memory device 100 includes two lateral surfaces extending laterally in the x-y plane: a top surface on the front side of the wafer, and a bottom surface on the backside opposite to the front side of the wafer. The z-axis is perpendicular to both the x and y axes. As used herein, whether one component (e.g., a layer or a device) is “on, ” “above, ” or “below” another component (e.g., a layer or a device) of a semiconductor device (e.g., 3D XPoint memory device 100) is determined relative to the substrate of the semiconductor device in the z-direction (the vertical direction perpendicular to the x-y plane) when the substrate is positioned in the lowest plane of the semiconductor device in the z-direction. The same notion for describing the spatial relationships is applied throughout the present disclosure.

As shown in FIG. 1, 3D XPoint memory device 100 includes a plurality of memory cells 108 each disposed at an intersection of lower or

upper bit line

102 or 104 and respective word line 106. Each memory cell 108 has a vertical square pillar shape. Each memory cell 108 includes at least a PCM element 110 and a selector 112 stacked vertically. Each memory cell 108 stores a single bit of data and can be written or read by varying the voltage applied to respective selector 112, which replaces the need for transistors. Each memory cell 108 is accessed individually by a current applied through the top and bottom conductors in contact with each memory cell 108, e.g., respective word line 106 and lower or

upper bit line

102 or 104. Memory cells 108 in 3D XPoint memory device 100 are arranged in a memory array.

FIG. 2 illustrates a side view of a cross-section of an exemplary memory device 200, according to some aspects of the present disclosure. In FIG. 2, memory device 200 includes a substrate 202, a plurality of parallel bit lines 204 formed on substrate 202, and a plurality of parallel word lines 206 formed above bit lines 204. Substrate 202 may include silicon (e.g., single crystalline silicon) , silicon germanium (SiGe) , gallium arsenide (GaAs) , germanium (Ge) , silicon on insulator (SOI) , or any other suitable materials. Bit lines 204 and word lines 206 can include conductive materials including, but not limited to, tungsten (W) , cobalt (Co) , copper (Cu) , aluminum (Al) , polysilicon, doped silicon, silicides, or any combination thereof. In some implementations, each of bit lines 204 and word lines 206 includes a metal, such as tungsten.

Memory device 200 may be divided by insulating structures 208 to form a plurality of separated memory cell structures 210. In some implementations, each memory cell structure 210 is disposed at an intersection of a respective one of bit lines 204 and a respective one of word lines 206. Each memory cell structure 210 may be accessed individually by a current applied through a respective word line 206 and a respective bit line 204 in contact with memory cell structure 210. Each memory cell structure 210 has a vertical pillar shape (e.g., similar to memory cell 108 in FIG. 1) , and insulating structures 208 may extend laterally in both x-direction and y-direction to separate the pillar-shaped memory cell structures 210.

Each memory cell structure 210 includes a first electrode layer 212 formed on bit line 204, a selection device 214 formed on first electrode layer 212, a first metal layer 216 formed on selection device 214, and an intermediate electrode layer 218 formed on first metal layer 216. Memory cell structure 210 further includes a phase-change material 220 formed on intermediate electrode layer 218, and a second electrode layer 222 formed on phase-change material 220. First electrode layer 212, selection device 214, first metal layer 216 and intermediate electrode layer 218 are functioned and used as a selector in memory cell structure 210. Intermediate electrode layer 218, phase-change material 220 and second electrode layer 222 are functioned and used as a storage element in memory cell structure 210. It is understood that intermediate electrode layer 218 is used as a common electrode in both the selector and the storage element.

First electrode layer 212 is formed on bit line 204 and is in contact with selection device 214, so that first electrode layer 212 serves as a current path and may be formed of a conductive material. In some implementations, first electrode layer 212 may be a metal, a conductive metal nitride, a conductive metal oxide, or combinations thereof. In some implementations, first electrode layer 212 may be a titanium nitride (TiN) layer, but the present disclosure is not limited thereto.

Selection device 214 is formed on first electrode layer 212, and the resistance of selection device 214 is changed in response to a selection voltage applied between first electrode layer 212 and intermediate electrode layer 218. In some implementations, selection device 214 may be a diode, a tunnel junction, a bipolar junction transistor (BJT) , a mixed ionic-electronic conduction (MIEC) device, a metal oxide semiconductor (MOS) transistor, or an ovonic threshold switch (OTS) device. In some implementations, selection device 214 may be an OTS device made of at least one of oxygen (O) , sulfur (S) , selenium (Se) , tellurium (Te) , germanium (Ge) , antimony (Sb) , silicon (Si) or arsenic (As) . The OTS device is formed by OTS material exhibiting an OTS property. With regard to the function of selection device 214 including the OTS material, when a voltage lower than a threshold voltage V _T is applied between first electrode layer 212 and intermediate electrode layer 218, selection device 214 may be in a high-resistance state preventing a current from flowing therethrough, and when a voltage higher than the threshold voltage V _T is applied between first electrode layer 212 and intermediate electrode layer 218, selection device 214 may be in a low-resistance state, allowing a current to flow therethrough.

First metal layer 216 is formed on selection device 214 and intermediate electrode layer 218 is formed on first metal layer 216. First metal layer 216 and intermediate electrode layer 218 have different conductivities, and the conductivity of intermediate electrode layer 218 is lower than the conductivity of first metal layer 216. First metal layer 216 has the characteristics of maintaining stable physical properties under high temperature and/or high current environments. In some implementations, first metal layer 216 may be formed by tungsten (W) , tungsten nitride (WN) , tungsten silicon nitride (WSiN) , titanium (Ti) , titanium nitride (TiN) , titanium silicon nitride (TiSiN) , tantalum (Ta) , tantalum nitride (TaN) , or tantalum silicon nitride (TaSiN) . In some implementations, first metal layer 216 may have a thickness between 2 nm and 40 nm. In some implementations, first metal layer 216 may have a thickness between 2 nm and 30 nm. In some implementations, first metal layer 216 may have a thickness between 2 nm and 20 nm.

Intermediate electrode layer 218 is formed between the selector and the storage element and functions as one of the electrodes of both the selector and the storage element so that intermediate electrode layer 218 should be formed by a thermal and electrical insulating material to reduce temperature and electrical interference from the selector and the storage element. In some implementations, intermediate electrode layer 218 may be formed by amorphous carbon.

Phase-change material 220 is formed on intermediate electrode layer 218. Phase-change material 220 is a material whose phase can be reversibly switched between amorphous and crystalline states, depending on a heating time. In general, phase-change material 220 may exist in an amorphous and one or sometimes several crystalline phases and can be rapidly and repeatedly switched between these phases. In some implementations, phase-change material 220 may include a material whose phase can be reversibly changed using Joule’s heat, which is generated when a voltage is applied between intermediate electrode layer 218 and second electrode layer 222, and the resistance of phase-change material 220 may be changed by such a change in phase. In some implementations, phase-change material 220 may include a chalcogenide composition including at least one of germanium (Ge) , antimony (Sb) , tellurium (Te) , indium (In) , or gallium (Ga) . In some implementations, phase-change material 220 may be a binary (two-element) compound such as GaSb, InSb, InSe, SbTe, or GeTe, a ternary (three-element) compound such as GeSbTe, GaSeTe, InSbTe, SnSbTe, or InSbGe, or a quaternary (four-element) compound such as AgInSbTe, (GeSn) SbTe, GeSb (SeTe) , or TeGeSbS. In some implementations, phase-change material 220 may be GeSbTe.

Second electrode layer 222 is formed on phase-change material 220. In some implementations, the material of second electrode layer 222 may be similar to the material of first electrode layer 212. In some implementations, the material of second electrode layer 222 may be similar to the material of intermediate electrode layer 218. Then, word line 206 is formed on second electrode layer 222.

It is understood that the position of bit lines 204 and word line 206 corresponding to memory cell structure 210 may be exchanged according to different memory design. In other words, first electrode layer 212 may be formed on a word line, and a bit line may be formed on second electrode layer 222.

FIG. 3 illustrates a side view of a cross-section of an exemplary memory device 300, according to some aspects of the present disclosure. Memory device 300 is similar to memory device 200 shown in FIG. 2, and a second metal layer 316 is further formed between first electrode layer 212 and selection device 214. In FIG. 3, the memory cell structure 310 also includes first electrode layer 212 formed on bit line 204. Second metal layer 316 is then formed on first electrode layer 212, and selection device 214 is formed on second metal layer 316. Then, first metal layer 216 is formed on selection device 214, and intermediate electrode layer 218 is formed on first metal layer 216. Memory cell structure 310 further includes phase-change material 220 formed on intermediate electrode layer 218, and second electrode layer 222 formed on phase-change material 220. First electrode layer 212, second metal layer 316, selection device 214, first metal layer 216, and intermediate electrode layer 218 are functioned and used as a selector in memory cell structure 310. Intermediate electrode layer 218, phase-change material 220 and second electrode layer 222 are functioned and used as a storage element in memory cell structure 310. It is understood that similar to memory cell structure 210, intermediate electrode layer 218 in memory cell structure 310 is also used as a common electrode in both the selector and the storage element.

Second metal layer 316 also has the characteristics of maintaining stable physical properties under high temperature and/or high current environments. In some implementations, second metal layer 316 may be formed by tungsten (W) , tungsten nitride (WN) , tungsten silicon nitride (WSiN) , titanium (Ti) , titanium nitride (TiN) , titanium silicon nitride (TiSiN) , tantalum (Ta) , tantalum nitride (TaN) , or tantalum silicon nitride (TaSiN) . In some implementations, second metal layer 316 may have a thickness between 2 nm and 40 nm. In some implementations, second metal layer 316 may have a thickness between 2 nm and 30 nm. In some implementations, second metal layer 316 may have a thickness between 2 nm and 20 nm.

FIG. 4 illustrates a side view of a cross-section of memory cell structure 310, according to some aspects of the present disclosure. As described above, memory cell structure 310 includes first metal layer formed between selection device 214 and intermediate electrode layer 218. First metal layer 216 and intermediate electrode layer 218 have different conductivities, and the conductivity of intermediate electrode layer 218 is lower than the conductivity of first metal layer 216.

When a voltage higher than the threshold voltage V _T of selection device 214 is applied between first electrode layer 212 and intermediate electrode layer 218, selection device 214 may be in a low-resistance state, allowing a current to flow therethrough. Under this situation, a conductive channel 402 is formed in selection device 214 as shown in FIG. 4, and the current flows into phase-change material 220 from conductive channel 402 through first metal layer 216 and intermediate electrode layer 218. Conductive channel 402 is formed random in a location within selection device 214. In some implementations, conductive channel 402 may be formed in the middle of selection device 214, and, in some implementations, conductive channel 402 may be formed on the side of selection device 214.

Since first metal layer 216 has a high conductivity than intermediate electrode layer 218, the current would be evenly distributed in first metal layer 216 in x-direction and y-direction before entering intermediate electrode layer 218 in the z-direction, as shown by arrows 404 in FIG. 4. Hence, no matter which position in selection device 214 conductive channel 402 is formed, the current flows from selection device 214 into phase-change material 220 through first metal layer 216 and intermediate electrode layer 218 would be evenly distributed. With the evenly distributed current, phase-change material 220 may contribute high reliability and performance compared to conventional structures. In other words, although intermediate electrode layer 218 has a higher resistance because of using the thermal and electrical insulating material, the current distribution can evenly enter phase-change material 220 because of forming first metal layer 216.

FIG. 5 illustrates a side view of a cross-section of an exemplary memory device 500, according to some aspects of the present disclosure. In FIG. 5, memory device 500 includes a substrate 502, a plurality of parallel bit lines 504 formed on substrate 502, and a plurality of parallel word lines 506 formed above bit lines 504. Memory device 500 may be divided by insulating structures 508 to form a plurality of separated memory cell structures 510. In some implementations, each memory cell structure 510 is disposed at an intersection of a respective one of bit lines 504 and a respective one of word lines 506.

Each memory cell structure 510 includes a first electrode layer 512 formed on bit line 504, a second metal layer 524 formed on first electrode layer 512, a selection device 514 formed on second metal layer 524, a first metal layer 516 formed on selection device 514, and an intermediate electrode layer 518 formed on first metal layer 516. Memory cell structure 510 further includes a third metal layer 526 formed on intermediate electrode layer 518, a phase-change material 520 formed on third metal layer 526, a fourth metal layer 528 formed on phase-change material 520, and a second electrode layer 522 formed on fourth metal layer 528. First electrode layer 512, second metal layer 524, selection device 514, first metal layer 516 and intermediate electrode layer 518 are functioned and used as a selector in memory cell structure 510. Intermediate electrode layer 518, third metal layer 526, phase-change material 520, fourth metal layer 528, and second electrode layer 522 are functioned and used as a storage element in memory cell structure 510. It is understood that intermediate electrode layer 518 is used as a common electrode in both the selector and the storage element.

The function, formation, or dimension of first electrode layer 512, second metal layer 524, selection device 514, first metal layer 516, intermediate electrode layer 518, phase-change material 520 and second electrode layer 522 is similar to the implementations of

memory devices

200 and 300 shown in FIGs. 2 and 3 and are not repeated here. Third metal layer 526 and fourth metal layer 528 have conductivities higher than intermediate electrode layer 518. In some implementations, third metal layer 526 and fourth metal layer 528 may be formed by, but not limited to, tungsten (W) , cobalt (Co) , copper (Cu) , aluminum (Al) , polysilicon, doped silicon, silicides, or any combination thereof.

FIG. 6 illustrates a side view of a cross-section of memory cell structure 510, according to some aspects of the present disclosure. As described above, memory cell structure 510 includes first metal layer 516 formed between selection device 514 and intermediate electrode layer 518. First metal layer 516 and intermediate electrode layer 518 have different conductivities, and the conductivity of intermediate electrode layer 518 is lower than the conductivity of first metal layer 516.

When a voltage higher than the threshold voltage V _T of selection device 514 is applied between first electrode layer 512 and intermediate electrode layer 518, selection device 514 may be in a low-resistance state, allowing a current to flow therethrough. Under this situation, a conductive channel 602 is formed in selection device 514 as shown in FIG. 6, and the current flows into phase-change material 520 from conductive channel 602 through first metal layer 516 and intermediate electrode layer 518. Conductive channel 602 is formed randomly in a location within selection device 514. In some implementations, conductive channel 602 may be formed in the middle of selection device 514, and, in some implementations, conductive channel 602 may be formed on the side of selection device 514.

Since first metal layer 516 has a high conductivity than intermediate electrode layer 518, the current would be evenly distributed in first metal layer 516 in x-direction and y-direction before entering intermediate electrode layer 518 in the z-direction, as shown by arrows 604 in FIG. 6. Hence, no matter which position in selection device 514 conductive channel 602 is formed, the current flows from selection device 514 into phase-change material 520 through first metal layer 516 and intermediate electrode layer 518 would be evenly distributed. With the evenly distributed current, phase-change material 520 may contribute high reliability and performance compared to conventional structures. In other words, although intermediate electrode layer 518 has a higher resistance because of using the thermal and electrical insulating material, the current distribution can evenly enter phase-change material 520 because of forming first metal layer 516.

In some implementations, third metal layer 526 and fourth metal layer 528 work to adjust adhesion between intermediate electrode layer 518 and phase-change material 520 and between phase-change material 520 and second electrode layer 522. Third metal layer 526 and fourth metal layer 528 have conductivities higher than intermediate electrode layer 518. In some implementations, third metal layer 526 and fourth metal layer 528 may be formed by, but not limited to, tungsten (W) , cobalt (Co) , copper (Cu) , aluminum (Al) , polysilicon, doped silicon, silicides, or any combination thereof.

FIGs. 7A-7B illustrates a side view of a cross-section of a switch device 700, according to some aspects of the present disclosure. As shown in FIG. 7A, switch device 700 includes a first electrode layer 702, a selection device 704 formed on first electrode layer 702, a first metal layer 706 formed on selection device 704, and a second electrode layer 708 formed on first metal layer 706. In some implementations, first electrode layer 702 may be a metal, a conductive metal nitride, a conductive metal oxide, or combinations thereof. In some implementations, first electrode layer 702 may be a titanium nitride (TiN) layer, but the present disclosure is not limited thereto. Selection device 704 is formed on first electrode layer 702, and the resistance of selection device 704 is changed in response to a selection voltage applied between first electrode layer 702 and second electrode layer 708. In some implementations, selection device 704 may be a diode, a tunnel junction, a bipolar junction transistor (BJT) , a mixed ionic-electronic conduction (MIEC) device, a metal oxide semiconductor (MOS) transistor, or an ovonic threshold switch (OTS) device. In some implementations, selection device 704 may be an OTS device made of at least one of oxygen (O) , sulfur (S) , selenium (Se) , tellurium (Te) , germanium (Ge) , antimony (Sb) , silicon (Si) or arsenic (As) . The OTS device is formed by OTS material exhibiting an OTS property.

First metal layer 706 is formed on selection device 704, and second electrode layer 708 is formed on first metal layer 706. First metal layer 706 and second electrode layer 708 have different conductivities, and the conductivity of second electrode layer 708 is lower than the conductivity of first metal layer 706. First metal layer 706 has the characteristics of maintaining stable physical properties under high temperature and/or high current environments. In some implementations, first metal layer 706 may be formed by tungsten (W) , tungsten nitride (WN) , tungsten silicon nitride (WSiN) , titanium (Ti) , titanium nitride (TiN) , titanium silicon nitride (TiSiN) , tantalum (Ta) , tantalum nitride (TaN) , or tantalum silicon nitride (TaSiN) . In some implementations, first metal layer 706 may have a thickness between 2 nm and 40 nm. In some implementations, first metal layer 706 may have a thickness between 2 nm and 30 nm. In some implementations, first metal layer 706 may have a thickness between 2 nm and 20 nm. In some implementations, second electrode layer 708 may be formed by a thermal and electrical insulating material. In some implementations, second electrode layer 708 may be formed by amorphous carbon.

FIG. 7B shows another implementation of switch device 700. In FIG. 7B, a second metal layer 710 is further formed between first electrode layer 702 and selection device 704. In some implementations, second metal layer 710 may be formed by tungsten (W) , tungsten nitride (WN) , tungsten silicon nitride (WSiN) , titanium (Ti) , titanium nitride (TiN) , titanium silicon nitride (TiSiN) , tantalum (Ta) , tantalum nitride (TaN) , or tantalum silicon nitride (TaSiN) . In some implementations, second metal layer 710 may have a thickness between 2 nm and 40 nm. In some implementations, second metal layer 710 may have a thickness between 2 nm and 30 nm. In some implementations, second metal layer 710 may have a thickness between 2 nm and 20 nm.

FIG. 8 illustrates a flowchart of an exemplary method 800 for fabricating a memory cell, according to some aspects of the present disclosure. It is understood that, before performing method 800, a substrate may be prepared, and a plurality of bit lines may be formed on the substrate in advance. Referring to FIG. 8, method 800 starts at operation 802, in which a selection device is formed on a first electrode layer, in which the first electrode layer is formed on the bit line. The first electrode layer may be a metal, a conductive metal nitride, a conductive metal oxide, or combinations thereof. In some implementations, the first electrode layer may be a titanium nitride (TiN) layer, but the present disclosure is not limited thereto.

In some implementations, the selection device may be a diode, a tunnel junction, a bipolar junction transistor (BJT) , a mixed ionic-electronic conduction (MIEC) device, a metal oxide semiconductor (MOS) transistor, or an ovonic threshold switch (OTS) device. In some implementations, the selection device may be an OTS device made of at least one of oxygen (O) , sulfur (S) , selenium (Se) , tellurium (Te) , germanium (Ge) , antimony (Sb) , silicon (Si) or arsenic (As) .

Referring to

operations

804 and 806, a first metal layer is formed on the selection device, and an intermediate electrode layer is formed on the first metal layer, in which the first metal layer and the intermediate electrode layer have different conductivities. In some implementations, the intermediate electrode layer has a first conductivity lower than a second conductivity of the first metal layer. The first metal layer has the characteristics of maintaining stable physical properties under high temperature and/or high current environments. In some implementations, the first metal layer may be formed by tungsten (W) , tungsten nitride (WN) , tungsten silicon nitride (WSiN) , titanium (Ti) , titanium nitride (TiN) , titanium silicon nitride (TiSiN) , tantalum (Ta) , tantalum nitride (TaN) , or tantalum silicon nitride (TaSiN) . In some implementations, the first metal layer may have a thickness between 2 nm and 40 nm. In some implementations, the first metal layer may have a thickness between 2 nm and 30 nm. In some implementations, the first metal layer may have a thickness between 2 nm and 20 nm. The Intermediate electrode layer is formed by a thermal and electrical insulating material to reduce temperature and electrical interference from the selector and the storage element. In some implementations, the intermediate electrode layer may be formed by amorphous carbon.

Referring to operation 808, a phase-change material is formed on the intermediate electrode layer. The phase-change material is a material whose phase can be reversibly switched between amorphous and crystalline states, depending on a heating time. In some implementations, the phase-change material may include a chalcogenide composition including at least one of germanium (Ge) , antimony (Sb) , tellurium (Te) , indium (In) , or gallium (Ga) . In some implementations, phase-change material 220 may be a binary (two-element) compound such as GaSb, InSb, InSe, SbTe, or GeTe, a ternary (three-element) compound such as GeSbTe, GaSeTe, InSbTe, SnSbTe, or InSbGe, or a quaternary (four-element) compound such as AgInSbTe, (GeSn) SbTe, GeSb (SeTe) , or TeGeSbS. In some implementations, phase-change material 220 may be GeSbTe.

Referring to operation 810, a second electrode layer is formed on the phase-change material. In some implementations, the material of the second electrode layer may be similar to the material of the first electrode layer. In some implementations, the material of the second electrode layer may be similar to the material of the intermediate electrode layer.

In some implementations, before forming the selection device on the first electrode layer, a second metal layer may be formed on the first electrode layer. The second metal layer has a third conductivity higher than the first conductivity of the intermediate electrode layer. In some implementations, the second metal layer is formed by tungsten (W) , tungsten nitride (WN) , tungsten silicon nitride (WSiN) , titanium (Ti) , titanium nitride (TiN) , titanium silicon nitride (TiSiN) , tantalum (Ta) , tantalum nitride (TaN) , or tantalum silicon nitride (TaSiN) . In some implementations, the second metal layer may have a thickness between 2 nm and 40 nm. In some implementations, the second metal layer may have a thickness between 2 nm and 30 nm. In some implementations, the second metal layer may have a thickness between 2 nm and 20 nm.

In some implementations, before forming the phase-change material on the intermediate electrode layer, a third metal layer may be formed on the intermediate electrode layer. In some implementations, before forming the second electrode layer on the phase-change material, a fourth metal layer may be formed on the phase-change material.

The present disclosure describes a method that a first metal layer is formed before the intermediate layer, and the first metal layer has a high conductivity than the intermediate electrode layer. The current flows from the selection device into the phase-change material through the first metal layer, and the intermediate electrode can be evenly distributed, and therefore the reliability and performance of the phase-change material can be improved.

According to one aspect of the present disclosure, a memory cell is disclosed. The memory cell includes a first electrode layer, a selection device formed on the first electrode layer, a first metal layer formed on the selection device, an intermediate electrode layer formed on the first metal layer, a phase-change material formed on the intermediate electrode layer, and a second electrode layer formed on the phase-change material. The intermediate electrode layer and the first metal layer have different conductivities.

In some implementations, a first conductivity of the intermediate electrode layer is lower than a second conductivity of the first metal layer. In some implementations, the first metal layer is formed by tungsten (W) , tungsten nitride (WN) , tungsten silicon nitride (WSiN) , titanium (Ti) , titanium nitride (TiN) , titanium silicon nitride (TiSiN) , tantalum (Ta) , tantalum nitride (TaN) , or tantalum silicon nitride (TaSiN) . In some implementations, the first metal layer has a thickness between 2 nm and 40 nm.

In some implementations, the selection device is a diode, a tunnel junction, a bipolar junction transistor (BJT) , a mixed ionic-electronic conduction (MIEC) device, a metal oxide semiconductor (MOS) transistor, or an ovonic threshold switch (OTS) device. In some implementations, the selection device is an OTS device made of at least one of oxygen (O) , sulfur (S) , selenium (Se) , tellurium (Te) , germanium (Ge) , antimony (Sb) , silicon (Si) or arsenic (As) . In some implementations, the phase-change material includes a chalcogenide composition including at least one of germanium (Ge) , antimony (Sb) , tellurium (Te) , indium (In) , or gallium (Ga) .

In some implementations, the memory cell further includes a second metal layer formed between the first electrode layer and the selection device. In some implementations, the second metal layer has a third conductivity higher than the first conductivity of the intermediate electrode layer. In some implementations, the second metal layer is formed by tungsten (W) , tungsten nitride (WN) , tungsten silicon nitride (WSiN) , titanium (Ti) , titanium nitride (TiN) , titanium silicon nitride (TiSiN) , tantalum (Ta) , tantalum nitride (TaN) , or tantalum silicon nitride (TaSiN) . In some implementations, the second metal layer has a thickness between 2 nm and 40 nm.

In some implementations, the memory cell further includes a third metal layer formed between the intermediate electrode layer and the phase-change material. In some implementations, the third metal layer has a fourth conductivity higher than the first conductivity of the intermediate electrode layer. In some implementations, the memory cell further includes a fourth metal layer formed between the phase-change material and the second electrode layer. In some implementations, the first electrode layer is formed on a bit line or a word line. In some implementations, a bit line or a word line is formed on the second electrode layer.

According to another aspect of the present disclosure, a memory device is disclosed. The memory device located between a bit line and a word line includes a selection unit, a storage unit, an intermediate electrode formed between the selection unit and the storage unit, and a first metal layer formed between the selection unit and the intermediate electrode. A first conductivity of the first metal layer is higher than a second conductivity of the intermediate electrode.

In some implementations, the selection unit includes a first electrode and a selection device, and resistance of the selection device is changed in response to a selection voltage applied between the first electrode and the intermediate electrode. In some implementations, the selection device is a diode, a tunnel junction, a bipolar junction transistor (BJT) , a mixed ionic-electronic conduction (MIEC) device, a metal oxide semiconductor (MOS) transistor, or an ovonic threshold switch (OTS) device. In some implementations, the selection device is an OTS device made of at least one of oxygen (O) , sulfur (S) , selenium (Se) , tellurium (Te) , germanium (Ge) , antimony (Sb) , silicon (Si) or arsenic (As) .

In some implementations, the storage unit includes a second electrode and a phase-change material, and the phase-change material transforms between amorphous and crystalline phases in response to an electrical current applied to the phase-change material. In some implementations, the phase-change material includes a chalcogenide composition including at least one of germanium (Ge) , antimony (Sb) , tellurium (Te) , indium (In) , or gallium (Ga) .

In some implementations, the first metal layer is formed by tungsten (W) , tungsten nitride (WN) , tungsten silicon nitride (WSiN) , titanium (Ti) , titanium nitride (TiN) , titanium silicon nitride (TiSiN) , tantalum (Ta) , tantalum nitride (TaN) , or tantalum silicon nitride (TaSiN) . In some implementations, the first metal layer has a thickness between 2 nm and 40 nm.

In some implementations, the selection unit further includes a second metal layer formed between the first electrode and the selection device. In some implementations, a third conductivity of the second metal layer is higher than the second conductivity of the intermediate electrode. In some implementations, the second metal layer is formed by tungsten (W) , tungsten nitride (WN) , tungsten silicon nitride (WSiN) , titanium (Ti) , titanium nitride (TiN) , titanium silicon nitride (TiSiN) , tantalum (Ta) , tantalum nitride (TaN) , or tantalum silicon nitride (TaSiN) . In some implementations, the second metal layer has a thickness between 2 nm and 40 nm.

According to a further aspect of the present disclosure, a switch device is disclosed. The switching device includes a first electrode, a second electrode formed by amorphous carbon, an ovonic threshold switch (OTS) layer formed between the first electrode and the second electrode, and a first metal layer formed between the OTS layer and the second electrode. A first conductivity of the first metal layer is higher than a second conductivity of the second electrode.

In some implementations, the first metal layer is formed by tungsten (W) , tungsten nitride (WN) , tungsten silicon nitride (WSiN) , titanium (Ti) , titanium nitride (TiN) , titanium silicon nitride (TiSiN) , tantalum (Ta) , tantalum nitride (TaN) , or tantalum silicon nitride (TaSiN) . In some implementations, the first metal layer has a thickness between 2 nm and 40 nm. In some implementations, the switching device further includes a second metal layer formed between the OTS layer and the first electrode. In some implementations, a third conductivity of the second metal layer is higher than the second conductivity of the second electrode. In some implementations, the second metal layer is formed by tungsten (W) , tungsten nitride (WN) , tungsten silicon nitride (WSiN) , titanium (Ti) , titanium nitride (TiN) , titanium silicon nitride (TiSiN) , tantalum (Ta) , tantalum nitride (TaN) , or tantalum silicon nitride (TaSiN) . In some implementations, the second metal layer has a thickness between 2 nm and 40 nm. In some implementations, the OTS layer is made of at least one of oxygen (O) , sulfur (S) , selenium (Se) , tellurium (Te) , germanium (Ge) , antimony (Sb) , silicon (Si) , or arsenic (As) .

According to a further aspect of the present disclosure, a method for fabricating a memory cell is disclosed. The method includes forming a selection device on a first electrode layer, forming a first metal layer on the selection device, forming an intermediate electrode layer having a different conductivity from the first metal layer on the first metal layer, forming a phase-change material on the intermediate electrode layer, and forming a second electrode layer on the phase-change material.

In some implementations, the intermediate electrode layer having a first conductivity lower than a second conductivity of the first metal layer is formed. In some implementations, the first metal layer is formed by tungsten (W) , tungsten nitride (WN) , tungsten silicon nitride (WSiN) , titanium (Ti) , titanium nitride (TiN) , titanium silicon nitride (TiSiN) , tantalum (Ta) , tantalum nitride (TaN) , or tantalum silicon nitride (TaSiN) . In some implementations, the first metal layer has a thickness between 2 nm and 40 nm.

In some implementations, the selection device includes a diode, a tunnel junction, a bipolar junction transistor (BJT) , a mixed ionic-electronic conduction (MIEC) device, a metal oxide semiconductor (MOS) transistor, or an ovonic threshold switch (OTS) device. In some implementations, the selection device is an OTS device made of at least one of oxygen (O) , sulfur (S) , selenium (Se) , tellurium (Te) , germanium (Ge) , antimony (Sb) , silicon (Si) or arsenic (As) . In some implementations, the phase-change material includes a chalcogenide composition including at least one of germanium (Ge) , antimony (Sb) , tellurium (Te) , indium (In) , or gallium (Ga) .

In some implementations, before forming the selection device on the first electrode layer, a second metal layer is further formed on the first electrode layer. In some implementations, the second metal layer has a third conductivity higher than the first conductivity of the intermediate electrode layer. In some implementations, the second metal layer is formed by tungsten (W) , tungsten nitride (WN) , tungsten silicon nitride (WSiN) , titanium (Ti) , titanium nitride (TiN) , titanium silicon nitride (TiSiN) , tantalum (Ta) , tantalum nitride (TaN) , or tantalum silicon nitride (TaSiN) . In some implementations, the second metal layer has a thickness between 2 nm and 40 nm.

In some implementations, before forming the phase-change material on the intermediate electrode layer, a third metal layer is further formed on the intermediate electrode layer. In some implementations, the third metal layer has a fourth conductivity higher than the first conductivity of the intermediate electrode layer. In some implementations, before forming the second electrode layer on the phase-change material, a fourth metal layer is further formed on the phase-change material.

The foregoing description of the specific implementations can be readily modified and/or adapted for various applications. Therefore, such adaptations and modifications are intended to be within the meaning and range of equivalents of the disclosed implementations, based on the teaching and guidance presented herein.

The breadth and scope of the present disclosure should not be limited by any of the above-described exemplary implementations, but should be defined only in accordance with the following claims and their equivalents.

Claims

A memory cell, comprising:

a first electrode layer;

a selection device formed on the first electrode layer;

a first metal layer formed on the selection device;

an intermediate electrode layer formed on the first metal layer;

a phase-change material formed on the intermediate electrode layer; and

a second electrode layer formed on the phase-change material,

wherein the intermediate electrode layer and the first metal layer have different conductivities.
The memory cell of claim 1, wherein a first conductivity of the intermediate electrode layer is lower than a second conductivity of the first metal layer.
The memory cell of any one of claims 1-2, wherein the first metal layer is formed by tungsten (W) , tungsten nitride (WN) , tungsten silicon nitride (WSiN) , titanium (Ti) , titanium nitride (TiN) , titanium silicon nitride (TiSiN) , tantalum (Ta) , tantalum nitride (TaN) , or tantalum silicon nitride (TaSiN) .
The memory cell of any one of claims 1-3, wherein the first metal layer has a thickness between 2 nm and 40 nm.
The memory cell of claim 1, wherein the selection device is a diode, a tunnel junction, a bipolar junction transistor (BJT) , a mixed ionic-electronic conduction (MIEC) device, a metal oxide semiconductor (MOS) transistor, or an ovonic threshold switch (OTS) device.
The memory cell of claim 1, wherein the selection device is an OTS device made of at least one of oxygen (O) , sulfur (S) , selenium (Se) , tellurium (Te) , germanium (Ge) , antimony (Sb) , silicon (Si) , or arsenic (As) .
The memory cell of claim 1, wherein the phase-change material comprises a chalcogenide composition including at least one of germanium (Ge) , antimony (Sb) , tellurium (Te) , indium (In) , or gallium (Ga) .
The memory cell of claim 1, wherein the memory cell further comprises a second metal layer formed between the first electrode layer and the selection device.
The memory cell of claim 8, wherein the second metal layer has a third conductivity higher than the first conductivity of the intermediate electrode layer.
The memory cell of any one of claims 8-9, wherein the second metal layer is formed by tungsten (W) , tungsten nitride (WN) , tungsten silicon nitride (WSiN) , titanium (Ti) , titanium nitride (TiN) , titanium silicon nitride (TiSiN) , tantalum (Ta) , tantalum nitride (TaN) , or tantalum silicon nitride (TaSiN) .
The memory cell of any one of claims 8-10, wherein the second metal layer has a thickness between 2 nm and 40 nm.
The memory cell of claim 1, wherein the memory cell further comprises a third metal layer formed between the intermediate electrode layer and the phase-change material.
The memory cell of claim 12, wherein the third metal layer has a fourth conductivity higher than the first conductivity of the intermediate electrode layer.
The memory cell of any one of claims 12-13, wherein the memory cell further comprises a fourth metal layer formed between the phase-change material and the second electrode layer.
The memory cell of any one of claims 1-14, wherein the first electrode layer is formed on a bit line or a word line.
The memory cell of any one of claims 1-14, wherein a bit line or a word line is formed on the second electrode layer.
A memory device located between a bit line and a word line, comprising:

a selection unit;

a storage unit;

an intermediate electrode formed between the selection unit and the storage unit; and

a first metal layer formed between the selection unit and the intermediate electrode,

wherein a first conductivity of the first metal layer is higher than a second conductivity of the intermediate electrode.
The memory device of claim 17, wherein the selection unit comprises a first electrode and a selection device, and resistance of the selection device is changed in response to a selection voltage applied between the first electrode and the intermediate electrode.
The memory device of claim 18, wherein the selection device is a diode, a tunnel junction, a bipolar junction transistor (BJT) , a mixed ionic-electronic conduction (MIEC) device, a metal oxide semiconductor (MOS) transistor, or an ovonic threshold switch (OTS) device.
The memory device of claim 18, wherein the selection device is an OTS device made of at least one of oxygen (O) , sulfur (S) , selenium (Se) , tellurium (Te) , germanium (Ge) , antimony (Sb) , silicon (Si) , or arsenic (As) .
The memory device of claim 17, wherein the storage unit comprises a second electrode and a phase-change material, and the phase-change material transforms between amorphous and crystalline phases in response to an electrical current applied to the phase-change material.
The memory device of claim 21, wherein the phase-change material comprises a chalcogenide composition including at least one of germanium (Ge) , antimony (Sb) , tellurium (Te) , indium (In) , or gallium (Ga) .
The memory device of any one of claims 17-22, wherein the first metal layer is formed by tungsten (W) , tungsten nitride (WN) , tungsten silicon nitride (WSiN) , titanium (Ti) , titanium nitride (TiN) , titanium silicon nitride (TiSiN) , tantalum (Ta) , tantalum nitride (TaN) , or tantalum silicon nitride (TaSiN) .
The memory device of any one of claims 17-23, wherein the first metal layer has a thickness between 2 nm and 40 nm.
The memory device of claim 18, wherein the selection unit further comprises a second metal layer formed between the first electrode and the selection device.
The memory device of claim 25, wherein a third conductivity of the second metal layer is higher than the second conductivity of the intermediate electrode.
The memory device of any one of claims 25-26, wherein the second metal layer is formed by tungsten (W) , tungsten nitride (WN) , tungsten silicon nitride (WSiN) , titanium (Ti) , titanium nitride (TiN) , titanium silicon nitride (TiSiN) , tantalum (Ta) , tantalum nitride (TaN) , or tantalum silicon nitride (TaSiN) .
The memory device of any one of claims 25-27, wherein the second metal layer has a thickness between 2 nm and 40 nm.
A switching device, comprising:

a first electrode;

a second electrode formed by amorphous carbon;

an ovonic threshold switch (OTS) layer formed between the first electrode and the second electrode; and

a first metal layer formed between the OTS layer and the second electrode,

wherein a first conductivity of the first metal layer is higher than a second conductivity of the second electrode.
The switching device of claim 29, wherein the first metal layer is formed by tungsten (W) , tungsten nitride (WN) , tungsten silicon nitride (WSiN) , titanium (Ti) , titanium nitride (TiN) , titanium silicon nitride (TiSiN) , tantalum (Ta) , tantalum nitride (TaN) , or tantalum silicon nitride (TaSiN) .
The switching device of any one of claims 29-30, wherein the first metal layer has a thickness between 2 nm and 40 nm.
The switching device of any one of claims 29-31, further comprising:

a second metal layer formed between the OTS layer and the first electrode.
The switching device of claim 32, wherein a third conductivity of the second metal layer is higher than the second conductivity of the second electrode.
The switching device of claim 33, wherein the second metal layer is formed by tungsten (W) , tungsten nitride (WN) , tungsten silicon nitride (WSiN) , titanium (Ti) , titanium nitride (TiN) , titanium silicon nitride (TiSiN) , tantalum (Ta) , tantalum nitride (TaN) , or tantalum silicon nitride (TaSiN) .
The switching device of any one of claims 32-34, wherein the second metal layer has a thickness between 2 nm and 40 nm.
The switching device of any one of claims 29-35, wherein the OTS layer is made of at least one of oxygen (O) , sulfur (S) , selenium (Se) , tellurium (Te) , germanium (Ge) , antimony (Sb) , silicon (Si) , or arsenic (As) .
A method for fabricating a memory cell, comprising:

forming a selection device on a first electrode layer;

forming a first metal layer on the selection device;

forming an intermediate electrode layer having different conductivity from the first metal layer on the first metal layer;

forming a phase-change material on the intermediate electrode layer; and

forming a second electrode layer on the phase-change material.
The method of claim 37, wherein forming the intermediate electrode layer having different conductivity from the first metal layer, comprises:

forming the intermediate electrode layer having a first conductivity lower than a second conductivity of the first metal layer.
The method of any one of claims 37-38, wherein the first metal layer is formed by tungsten (W) , tungsten nitride (WN) , tungsten silicon nitride (WSiN) , titanium (Ti) , titanium nitride (TiN) , titanium silicon nitride (TiSiN) , tantalum (Ta) , tantalum nitride (TaN) , or tantalum silicon nitride (TaSiN) .
The method of any one of claims 37-39, wherein the first metal layer has a thickness between 2 nm and 40 nm.
The method of claim 37, wherein forming the selection device, comprises:

forming a diode, a tunnel junction, a bipolar junction transistor (BJT) , a mixed ionic-electronic conduction (MIEC) device, a metal oxide semiconductor (MOS) transistor, or an ovonic threshold switch (OTS) device.
The method of claim 37, wherein the selection device is an OTS device made of at least one of oxygen (O) , sulfur (S) , selenium (Se) , tellurium (Te) , germanium (Ge) , antimony (Sb) , silicon (Si) , or arsenic (As) .
The method of claim 37, wherein the phase-change material comprises a chalcogenide composition including at least one of germanium (Ge) , antimony (Sb) , tellurium (Te) , indium (In) , or gallium (Ga) .
The method of claim 37, before forming the selection device on the first electrode layer, further comprising:

forming a second metal layer on the first electrode layer.
The method of claim 44, wherein the second metal layer has a third conductivity higher than the first conductivity of the intermediate electrode layer.
The method of any one of claims 44-45, wherein the second metal layer is formed by tungsten (W) , tungsten nitride (WN) , tungsten silicon nitride (WSiN) , titanium (Ti) , titanium nitride (TiN) , titanium silicon nitride (TiSiN) , tantalum (Ta) , tantalum nitride (TaN) , or tantalum silicon nitride (TaSiN) .
The method of any one of claims 44-46, wherein the second metal layer has a thickness between 2 nm and 40 nm.
The method of claim 37, before forming the phase-change material on the intermediate electrode layer, further comprising:

forming a third metal layer on the intermediate electrode layer.
The method of claim 48, wherein the third metal layer has a fourth conductivity higher than the first conductivity of the intermediate electrode layer.
The method of any one of claims 48-49, before forming the second electrode layer on the phase-change material, further comprising:

forming a fourth metal layer on the phase-change material.