WO2022145730A1 - Light-emitting diode reflector - Google Patents

Light-emitting diode reflector Download PDF

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Publication number
WO2022145730A1
WO2022145730A1 PCT/KR2021/017063 KR2021017063W WO2022145730A1 WO 2022145730 A1 WO2022145730 A1 WO 2022145730A1 KR 2021017063 W KR2021017063 W KR 2021017063W WO 2022145730 A1 WO2022145730 A1 WO 2022145730A1
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Prior art keywords
emitting diode
light emitting
weight
diode reflector
parts
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PCT/KR2021/017063
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French (fr)
Korean (ko)
Inventor
김현수
김익모
이상화
이봉재
Original Assignee
롯데케미칼 주식회사
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Publication of WO2022145730A1 publication Critical patent/WO2022145730A1/en

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    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L67/00Compositions of polyesters obtained by reactions forming a carboxylic ester link in the main chain; Compositions of derivatives of such polymers
    • C08L67/02Polyesters derived from dicarboxylic acids and dihydroxy compounds
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29CSHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C45/00Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29CSHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C45/00Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor
    • B29C45/0005Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor using fibre reinforcements
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29CSHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C45/00Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor
    • B29C45/17Component parts, details or accessories; Auxiliary operations
    • B29C45/72Heating or cooling
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00Use of inorganic substances as compounding ingredients
    • C08K3/01Use of inorganic substances as compounding ingredients characterized by their specific function
    • C08K3/013Fillers, pigments or reinforcing additives
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00Use of organic ingredients
    • C08K5/49Phosphorus-containing compounds
    • C08K5/51Phosphorus bound to oxygen
    • C08K5/53Phosphorus bound to oxygen bound to oxygen and to carbon only
    • C08K5/5317Phosphonic compounds, e.g. R—P(:O)(OR')2
    • C08K5/5333Esters of phosphonic acids
    • C08K5/5357Esters of phosphonic acids cyclic
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K7/00Use of ingredients characterised by shape
    • C08K7/02Fibres or whiskers
    • C08K7/04Fibres or whiskers inorganic
    • C08K7/14Glass
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21VFUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V7/00Reflectors for light sources
    • F21V7/22Reflectors for light sources characterised by materials, surface treatments or coatings, e.g. dichroic reflectors
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00Optical elements other than lenses
    • G02B5/08Mirrors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58Optical field-shaping elements
    • H01L33/60Reflective elements
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21YINDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2115/00Light-generating elements of semiconductor light sources
    • F21Y2115/10Light-emitting diodes [LED]
    • F21Y2115/15Organic light-emitting diodes [OLED]

Definitions

  • the present invention relates to a light emitting diode reflector. More specifically, the present invention relates to a light emitting diode reflector excellent in reflectance, reflectance retention, thin film formability, impact resistance, heat resistance, and balance of these properties.
  • LEDs Light emitting diodes
  • OLEDs organic light emitting diodes
  • the light emitting diode package (package) of the light emitting diode together with component materials such as a reflector, a reflector cup, a scrambler, and a housing to maximize light efficiency through high reflectivity.
  • component materials such as a reflector, a reflector cup, a scrambler, and a housing to maximize light efficiency through high reflectivity. to form These component materials must be able to withstand high temperatures and minimize the decrease in whiteness due to reduced reflectance and yellowing.
  • polyester resins, copolymers thereof, blends thereof, etc. each exhibit useful properties and are applied to various fields including interior and exterior materials of products, and are also used as materials for light emitting diode reflectors and the like.
  • the polyester resin mainly used for the light emitting diode reflector material is a high heat-resistant polyester resin such as an aromatic polyester resin.
  • the high heat-resistant polyester resin does not deform at high temperatures and has excellent discoloration resistance, but has problems in that the crystallization rate is slow, mechanical strength is low, and impact resistance is poor.
  • an additive such as an inorganic filler is mixed with a polyester resin to improve impact resistance, rigidity, and the like.
  • an additive such as an inorganic filler is used in excess, there is a concern that a problem of lowering of moldability such as bleed-out may occur.
  • the content of white pigment, etc. must be increased. In this case, as white pigment and inorganic filler are added in excess, the impact resistance of the thermoplastic resin composition may be reduced There are concerns.
  • An object of the present invention is to provide a light emitting diode reflector excellent in reflectance, reflectance retention, thin film formability, impact resistance, heat resistance, and balance of physical properties thereof.
  • Another object of the present invention is to provide a semiconductor device including the light emitting diode reflector.
  • the light emitting diode reflector may include: about 100 parts by weight of a polyester resin including a repeating unit represented by the following Chemical Formula 1; about 5 to about 40 parts by weight of a white pigment; about 5 to about 30 parts by weight of glass fiber; About 0.1 to about 3 parts by weight of a pentaerythritol diphosphite compound represented by the following formula (2); and DOPO (9,10-dihydro-9-oxa-10-phosphaphenanthrene-10-oxide) about 0.1 to about 3 parts by weight; formed from a thermoplastic resin composition comprising the pentaerythritol diphosphite compound and a weight ratio of the DOPO (pentaerythritol diphosphite compound:DOPO) of about 1:0.2 to about 1:5:
  • Ar is an arylene group having 6 to 18 carbon atoms
  • R 1 and R 3 are each independently a linear alkylene group having 1 to 10 carbon atoms
  • R 2 is a cyclic alkylene group having 5 to 12 carbon atoms
  • R 4 and R 5 are each independently a substituted or unsubstituted C 1 to C 10 alkyl group or a substituted or unsubstituted C 6 to C 20 aryl group.
  • the polyester resin may include a repeating unit represented by the following Chemical Formula 1a.
  • the white pigment may include at least one of titanium oxide, zinc oxide, zinc sulfide, zinc sulfate, barium sulfate, calcium carbonate, and alumina.
  • the weight ratio of the white pigment to the pentaerythritol diphosphite compound may be about 15:1 to about 150:1.
  • the light emitting diode reflector may have a reflectance of about 92 to about 99% with respect to 450 nm wavelength light of a 90 mm ⁇ 50 mm ⁇ 2.5 mm specimen measured according to ASTM E1331. .
  • the light emitting diode reflector may have a reflectance retention calculated according to Equation 1 below about 99% or more:
  • Equation 1 Rf 0 is the initial reflectance with respect to 450 nm wavelength light of a 90 mm ⁇ 50 mm ⁇ 2.5 mm size specimen measured according to ASTM E1331, and Rf 1 is the specimen at 105° C., left for 500 hours. Then, it is the reflectance with respect to 450 nm wavelength light measured according to ASTM E1331.
  • the thermoplastic resin composition is a spiral having a width of 15 mm and a thickness of 0.5 mm under the conditions of a molding temperature of 300° C., a mold temperature of 60° C., an injection pressure of 100 MPa and an injection speed of 100 mm/s. ), the length of the spiral flow of the specimen measured after injection molding in the mold may be about 85 to about 150 mm.
  • the light emitting diode reflector may have an unnotched Izod impact strength of about 20 to about 40 kgf ⁇ cm/cm of a 1/8′′ thick specimen measured according to ASTM D4812.
  • the light emitting diode reflector has a heat deflection temperature (HDT) of about 190 to about 270° C., measured under the conditions of a stress of 1.82 MPa and a temperature increase rate of 120° C./hr, according to ASTM D648.
  • HDT heat deflection temperature
  • the semiconductor device includes the light emitting diode reflectors according to the 1 to 9 embodiments.
  • the present invention has the effect of providing a light emitting diode reflector excellent in reflectance, reflectance retention, thin film formability, impact resistance, heat resistance, and balance of physical properties thereof and a semiconductor device including the same.
  • FIG. 1 is a cross-sectional view of a semiconductor device including a light emitting diode reflector according to an embodiment of the present invention.
  • a light emitting diode reflector is (A) a polyester resin; (B) white pigment; (C) fiberglass; (D) a pentaerythritol diphosphite compound; and (E) DOPO (9,10-dihydro-9-oxa-10-phosphaphenanthrene-10-oxide);
  • the polyester resin according to an embodiment of the present invention is capable of improving the mechanical strength such as heat resistance, impact resistance, and rigidity of the thermoplastic resin composition even at high temperatures, and may include a repeating unit represented by the following formula (1).
  • Ar is an arylene group having 6 to 18 carbon atoms
  • R 1 and R 3 are each independently a linear alkylene group having 1 to 10 carbon atoms
  • R 2 is a cyclic alkylene group having 5 to 12 carbon atoms.
  • -R 1 -R 2 -R 3 - is derived from an alicyclic diol, and may have 7 to 22 carbon atoms in total.
  • the polyester resin includes a ring-shaped structure in the main chain and has a high melting temperature, and may be, for example, about 200° C. or higher, but is not limited thereto.
  • the polyester resin may be prepared by a known polycondensation method of a dicarboxylic acid component including an aromatic dicarboxylic acid and derivatives thereof and a diol component including an alicyclic diol.
  • the dicarboxylic acid component includes terephthalic acid, isophthalic acid, 1,2-naphthalenedicarboxylic acid, 1,4-naphthalenedicarboxylic acid, 1,5-naphthalenedicarboxylic acid, 1,6 -naphthalenedicarboxylic acid, 1,7-naphthalenedicarboxylic acid, 1,8-naphthalenedicarboxylic acid, 2,3-naphthalenedicarboxylic acid, 2,6-naphthalenedicarboxylic acid, 2,7 -Naphthalenedicarboxylic acid and the like may be used, but is not limited thereto. These can be used individually or in mixture of 2 or more types.
  • the alicyclic diol may include an alicyclic diol having 7 to 22 carbon atoms, for example, 1,4-cyclohexanedimethanol (CHDM), but is not limited thereto.
  • CHDM 1,4-cyclohexanedimethanol
  • the polyester resin may be a polycyclohexanedimethylene terephthalate (PCT) resin including a repeating unit represented by the following Chemical Formula 1a.
  • PCT polycyclohexanedimethylene terephthalate
  • the polyester resin has a weight average molecular weight of about 3,000 to about 200,000 g/mol, for example, about 5,000, measured in a hexafluoroisopropanol (HFIP) solvent by gel permeation chromatography (GPC). to about 150,000 g/mol.
  • HFIP hexafluoroisopropanol
  • GPC gel permeation chromatography
  • the white pigment according to an embodiment of the present invention is applied to the polyester resin together with glass fiber, pentaerythritol diphosphite compound, DOPO, etc.
  • a white pigment applied to a conventional light emitting diode reflector can be used without limitation as it can improve the balance of their physical properties.
  • titanium oxide, zinc oxide, zinc sulfide, zinc sulfate, barium sulfate, calcium carbonate, alumina, white lead (2PbCO 3 ⁇ Pb(OH) 2 ), etc. are used alone or by mixing two or more types.
  • titanium oxide (TiO 2 ) having a crystal structure of a rutile type or a tetragonal system may be used.
  • the average particle diameter (D50) of the white pigment may be about 0.01 to about 2 ⁇ m, for example, about 0.05 to about 0.7 ⁇ m. In the above range, the whiteness, reflectance, etc. of the thermoplastic resin composition for a light emitting diode reflector may be excellent.
  • the average particle diameter (D50) is the number average particle diameter measured with a particle size analyzer (Beckman Coulter, LS 13 320), and is a value specified by D50 (the particle diameter at the point where the distribution ratio is 50%).
  • the white pigment may be surface-treated with an organic surface treatment agent or an inorganic surface treatment agent.
  • the organic surface treatment agent may include, but is not limited to, a silane coupling agent, polydimethylsiloxane, trimethylolpropane (TMP), pentaerythritol, and combinations thereof.
  • a silane coupling agent vinyltriethoxysilane, 2-aminopropyltriethoxysilane, 2-glycidoxypropyltriethoxysilane, or the like may be used.
  • the inorganic surface treatment agent aluminum oxide (alumina, Al 2 O 3 ), silicon dioxide (silica, SiO 2 ), zirconia (zircon dioxide, ZrO 2 ), sodium silicate, sodium aluminate, sodium aluminum silicate, zinc oxide , mica, etc. may be used, and two or more of them may be mixed and used.
  • the organic surface treatment agent or inorganic surface treatment agent may be included in an amount of about 5 parts by weight or less based on about 100 parts by weight of the white pigment during the surface treatment. In the above range, the whiteness and reflectance of the light emitting diode reflector may be more excellent.
  • the white pigment may be included in an amount of about 5 to about 40 parts by weight, for example, about 15 to about 40 parts by weight based on about 100 parts by weight of the polyester resin.
  • the content of the white pigment is less than about 5 parts by weight based on about 100 parts by weight of the polyester resin, there is a fear that the whiteness, reflectance, impact resistance, heat resistance, etc. of the light emitting diode reflector may decrease, and when it exceeds about 40 parts by weight , there is a possibility that the reflectance retention rate, thin film formability, etc. of the light emitting diode reflector may be deteriorated.
  • the glass fiber of the present invention is applied to the polyester resin together with a white pigment, pentaerythritol diphosphite compound, DOPO, etc. to balance the rigidity, reflectance, reflectance retention, thin film formability, impact resistance, heat resistance, and physical properties of the light emitting diode reflector. and the like, may include circular cross-sectional glass fibers, flat-shaped glass fibers, combinations thereof, and the like.
  • the circular cross-section glass fiber may be a glass fiber having an average diameter of a circular cross-section measured with an optical microscope of about 5 to about 15 ⁇ m, for example, about 6 to about 12 ⁇ m.
  • the rigidity, reflectance, impact resistance, etc. of the thermoplastic resin composition for a light emitting diode reflector may be excellent.
  • the flat glass fiber may have an aspect ratio of a cross section of about 1.5 to about 4, for example, about 2 to about 4, as measured by an optical microscope, and a minor diameter of about 6 to about 10 ⁇ m, for example, about 6 to about 9 ⁇ m.
  • the thermoplastic resin composition for a light emitting diode reflector may have excellent impact resistance, reflectance, and the like.
  • the glass fiber may have an average length of about 1 to about 5 mm before extrusion, and an average length of about 100 to about 700 ⁇ m after extrusion (processing), for example, about 110 to about 690 ⁇ m. .
  • the thermoplastic resin composition for a light emitting diode reflector may have excellent impact resistance, rigidity, appearance characteristics, and the like.
  • the glass fiber coated with a surface treatment agent may be used in order to increase bonding strength with a polyester resin or the like.
  • a silane-based compound, a urethane-based compound, or an epoxy-based compound may be used, but is not limited thereto.
  • the glass fiber may be included in an amount of about 5 to about 30 parts by weight, for example, about 5 to about 25 parts by weight based on about 100 parts by weight of the polyester resin.
  • the content of the glass fiber is less than about 5 parts by weight based on about 100 parts by weight of the polyester resin, there is a risk that the impact resistance, heat resistance, rigidity, etc. of the light emitting diode reflector may decrease, and when it exceeds about 30 parts by weight, light emission There is a possibility that the reflectance retention of the diode reflector, thin film formability, and the like may decrease.
  • the pentaerythritol diphosphite compound according to an embodiment of the present invention is applied to the polyester resin together with a white pigment, glass fiber, DOPO, etc. , heat resistance, balance of these physical properties, etc. can be improved, the pentaerythritol diphosphite compound represented by the following formula (2) can be used.
  • R 4 and R 5 are each independently a substituted or unsubstituted C 1 to C 20 alkyl group or a substituted or unsubstituted C 6 to C 20 aryl group.
  • substitution means that a hydrogen atom is halogen, C 1 to C 20 alkyl, C 1 to C 20 haloalkyl, C 6 to C 20 aryl, C 2 to C 20 heteroaryl, combinations thereof, etc. It means substituted with a substituent.
  • the pentaerythritol diphosphite compound is bis(2,6-di-tert-butyl-4-methylphenyl)pentaerythritol diphosphite, tri(2,4-di-tert-butylphenyl)pentaerythritol phosphite, bis(2,4-dicumylphenyl)pentaerythritol diphosphite, combinations thereof, and the like.
  • the pentaerythritol diphosphite compound may be included in an amount of about 0.1 to about 3 parts by weight, for example, about 0.2 to about 1 part by weight, based on about 100 parts by weight of the polyester resin.
  • the content of the pentaerythritol diphosphite compound is less than about 0.1 parts by weight based on about 100 parts by weight of the polyester resin, there is a fear that the reflectance retention rate and heat resistance of the light emitting diode reflector may decrease, and when it exceeds about 3 parts by weight, The reflectance, thin film formability, impact resistance, etc. of the light emitting diode reflector may be deteriorated.
  • the weight ratio (B:D) of the white pigment (B) and the pentaerythritol diphosphite compound (D) is from about 15:1 to about 150:1, for example from about 25:1 to about 125:1 can be In the above range, the reflectance of the light emitting diode reflector, the reflectance retention rate, etc. may be more excellent.
  • DOPO (9,10-dihydro-9-oxa-10-phosphaphenanthrene-10-oxide (9,10-dihydro-9-oxa-10-phosphaphenanthrene-10-oxide) according to an embodiment of the present invention ) is applied to the polyester resin together with a white pigment, glass fiber, pentaerythritol diphosphite compound, etc. to improve the reflectance, reflectance retention, thin film formability, impact resistance, heat resistance, and balance of these properties of the light emitting diode reflector.
  • DOPO used in conventional thermoplastic resin compositions.
  • the DOPO may be included in an amount of about 0.1 to about 3 parts by weight, for example, about 0.2 to about 1 part by weight, based on 100 parts by weight of the polyester resin.
  • the content of DOPO is less than about 0.1 parts by weight based on about 100 parts by weight of the polyester resin, there is a risk that the reflectance retention rate and thin film formability of the light emitting diode reflector may be deteriorated, and when it exceeds about 3 parts by weight, the light emitting diode There exists a possibility that the heat resistance of a reflector, etc. may fall.
  • the weight ratio (D:E) of the pentaerythritol diphosphite compound (D) and the DOPO (E) is from about 1: 0.2 to about 1: 5, for example from about 1: 0.3 to about 1: 3 days.
  • the weight ratio (D:E) is less than about 1: 0.2, there is a fear that the reflectance and reflectance retention of the light emitting diode reflector may be lowered, and when it exceeds about 1: 5, the reflectance retention of the light emitting diode reflector, heat resistance, etc. There is a risk of deterioration.
  • thermoplastic resin composition according to one embodiment of the present invention may further include conventional additives according to the use within the range that does not impair the desired effect.
  • additives include antioxidants, flame retardants, flame retardant auxiliary agents, anti-drip agents, nucleating agents, mold release agents, antibacterial agents, surfactants, coupling agents, plasticizers, compatibilizers, lubricants, antistatic agents, combinations thereof, and the like, but are not limited thereto. does not
  • its content when the additive is used, its content may be about 20 parts by weight or less, for example, about 0.1 to about 15 parts by weight based on about 100 parts by weight of the polyester resin, but is not limited thereto.
  • thermoplastic resin composition may be prepared through a known method.
  • each component and, if necessary, additives are mixed with a Henschel mixer, V blender, tumbler blender, ribbon blender, etc., and melt-extruded at a temperature of about 250 to about 350° C. using a single screw extruder or twin screw extruder. It can be prepared in the form of pellets.
  • the light emitting diode reflector according to the present invention is formed from the thermoplastic resin composition.
  • a molded article may be manufactured by a known molding method such as injection molding, double injection molding, blow molding, extrusion molding, or thermoforming.
  • the light emitting diode reflector has a reflectance of about 92 to about 99%, for example, about 94 to about 98, with respect to 450 nm wavelength light of a 90 mm ⁇ 50 mm ⁇ 2.5 mm specimen measured according to ASTM E1331. It can be %.
  • the light emitting diode reflector may have a reflectance retention calculated according to Equation 1 below about 99% or more.
  • Equation 1 Rf 0 is the initial reflectance with respect to 450 nm wavelength light of a 90 mm ⁇ 50 mm ⁇ 2.5 mm size specimen measured according to ASTM E1331, and Rf 1 is the specimen at 105° C., left for 500 hours. Then, it is the reflectance with respect to 450 nm wavelength light measured according to ASTM E1331.
  • the thermoplastic resin composition is injected in a spiral mold having a width of 15 mm and a thickness of 0.5 mm under the conditions of a molding temperature of 300° C., a mold temperature of 60° C., an injection pressure of 100 MPa and an injection speed of 100 mm/s.
  • a spiral flow length of the specimen measured after molding may be about 85 to about 150 mm, for example, about 87 to about 120 mm.
  • the light emitting diode reflector has an unnotched Izod impact strength of about 20 to about 40 kgf ⁇ cm/cm, for example, about 20 to about 35 kgf ⁇ cm/cm.
  • the light emitting diode reflector has a heat deflection temperature (HDT) of about 190 to about 270° C., for example 191 to 240, measured under the conditions of a stress of 1.82 MPa and a temperature increase rate of 120° C./hr according to ASTM D648 °C.
  • HDT heat deflection temperature
  • the light emitting diode reflector is excellent in reflectance, reflectance retention, thin film moldability, impact resistance, heat resistance, balance of these properties, etc., so long as it is used for reflecting light, it can be applied without limitation.
  • it is useful as a reflection plate for light emitting devices such as parts of various electric and electronic products, indoor and outdoor lighting, automobile lighting, and display devices.
  • the light emitting diode reflector of the present invention may be formed into a cup-shaped reflector, and may be formed in various other forms.
  • an electrode 2 is formed on a substrate 3 , and a light emitting diode (LED) 6 is mounted on the electrode 2 .
  • the light emitting diode LED 6 is connected to the electrode 2 via a wire 5 .
  • the reflector 1 has a cup shape and has a recess so that the light emitting diodes LED 6 can be mounted thereon.
  • the concave portion is sealed with a sealing resin (4) so that the light emitting diode (LED, 6) can be protected from the outside.
  • the configuration is capable of various modifications and variations from these descriptions by those of ordinary skill in the art to which the present invention pertains.
  • Polycyclohexanedimethylene terephthalate resin (manufacturer: SK Chemicals, product name: Skypura 0502) was used.
  • Titanium oxide (TiO 2 , manufacturer: Chemours, product name: R-103) was used.
  • a circular cross-section glass fiber (manufacturer: CPIC, product name: ECS303W) was used.
  • extrusion was performed at about 300° C. to prepare pellets (thermoplastic resin composition).
  • pellets thermoplastic resin composition
  • the physical properties were measured by the following method, and the results are shown in Tables 1, 2 and 3.
  • Reflectance (unit: %): According to ASTM E1331, measure the reflectance (using the SCI (specular component included) mode) of a 90 mm ⁇ 50 mm ⁇ 2.5 mm size specimen for 450 nm wavelength light (LED light source) did CM-3600d from Konica Minolta was used as a reflectance meter.
  • Equation 1 Rf 0 is the initial reflectance with respect to 450 nm wavelength light of a 90 mm ⁇ 50 mm ⁇ 2.5 mm size specimen measured according to ASTM E1331, and Rf 1 is the specimen at 105° C., left for 500 hours. Then, it is the reflectance with respect to 450 nm wavelength light measured according to ASTM E1331.
  • thermoplastic resin composition was subjected to a molding temperature of 320° C., a mold temperature of 60° C., an injection pressure of 100 MPa, and an injection speed of 100 mm/s, with a width of 15 mm and a thickness of 100 mm/s. Thin film moldability was evaluated by measuring the length of the spiral flow of the specimen measured after injection molding in a 0.5 mm spiral mold.
  • Unnotched Izod impact strength (unit: kgf ⁇ cm/cm): According to ASTM D4812, the unnotched Izod impact strength of a 1/8′′ thick specimen was measured.
  • Heat deflection temperature (unit: °C): According to ASTM D648, the heat deflection temperature (HDT) was measured under the conditions of a stress of 1.82 MPa and a temperature increase rate of 120 °C/hr.
  • Example One 2 3 4 5 6 7 8 9 (A) (parts by weight) 100 100 100 100 100 100 100 100 100 100 100 100 100 (B) (parts by weight) 15 25 40 25 25 25 25 25 25 (C) (parts by weight) 15 15 15 5 25 15 15 15 15 (D1) (parts by weight) 0.6 0.6 0.6 0.6 0.6 0.2 1.0 0.6 0.6 (D2) (parts by weight) - - - - - - - - - - (E1) (parts by weight) 0.6 0.6 0.6 0.6 0.6 0.2 1.0 (E2) (parts by weight) - - - - - - - - - - (initial) reflectance (%) 94.6 95.6 96.0 95.8 95.0 95.6 95.5 95.6 95.7 Reflectance Retention (%) 99.3 99.2 99.1 99.2 99.2 99.1 99.2 99.3 99.5 Spiral flow length (mm) 109 103 90 108 87
  • the light emitting diode reflector (thermoplastic resin composition) according to the present invention has excellent reflectance, reflectance retention, thin film formability, impact resistance, heat resistance, and balance of physical properties thereof.
  • Comparative Example 3 When the glass fiber is applied below the content range of the present invention (Comparative Example 3), it can be seen that the impact resistance and heat resistance of the light emitting diode reflector are lowered, and when the glass fiber is applied in excess of the content range of the present invention ( In Comparative Example 4), it can be seen that the reflectance retention rate and thin film formability of the light emitting diode reflector are deteriorated.
  • the weight ratio (D1:E1) of the pentaerythritol diphosphite compound and DOPO is less than 1: 0.2 (1: 0.05) (Comparative Example 11) ), it can be seen that the reflectance retention rate of the light emitting diode reflector is lowered, and when it exceeds 1: 5 (1: 15) (Comparative Example 12), it can be seen that the reflectance retention rate, heat resistance, etc. of the light emitting diode reflector are lowered.

Abstract

A light-emitting diode reflector of the present invention is formed from a thermoplastic resin composition comprising: about 100 parts by weight of a polyester resin including a repeating unit represented by chemical formula 1; about 5-40 parts by weight of a white pigment; about 5-30 parts by weight of glass fiber; about 0.1-3 parts by weight of a pentaerythritol diphosphite compound represented by chemical formula 2; and about 0.1-3 parts by weight of DOPO, wherein the weight ratio of the pentaerythritol diphosphite compound and the DOPO is about 1:0.2-1:5. The light-emitting diode reflector has excellent reflectivity, reflectivity retention rate, thin film formability, impact resistance, heat resistance, and property balances thereof.

Description

발광다이오드 리플렉터light emitting diode reflector
본 발명은 발광다이오드 리플렉터에 관한 것이다. 보다 구체적으로, 본 발명은 반사율, 반사율 유지율, 박막 성형성, 내충격성, 내열성, 이들의 물성 발란스 등이 우수한 발광다이오드 리플렉터에 관한 것이다.The present invention relates to a light emitting diode reflector. More specifically, the present invention relates to a light emitting diode reflector excellent in reflectance, reflectance retention, thin film formability, impact resistance, heat resistance, and balance of these properties.
발광다이오드(LED; light emitting diode) 및 유기발광다이오드(OLED; organic light emitting diode)는 뛰어난 에너지 효율과 긴 수명으로 인하여, 기존의 광원을 급속히 대체하며 각광을 받고 있다. 일반적으로 발광다이오드는 높은 반사율을 통해 광효율을 극대화시킬 수 있도록, 리플렉터(reflector), 리플렉터 컵(reflector cup), 스크램블러(scrambler), 하우징(housing) 등의 부품 소재와 함께 발광다이오드 패키지(package)를 형성한다. 이러한 부품 소재는 높은 온도에 견딜 수 있으며, 반사율 저하 및 황변화로 인한 백색도 저하를 최소화할 수 있어야 한다.BACKGROUND ART Light emitting diodes (LEDs) and organic light emitting diodes (OLEDs) are rapidly replacing conventional light sources due to their excellent energy efficiency and long lifespan, and are in the spotlight. In general, the light emitting diode package (package) of the light emitting diode together with component materials such as a reflector, a reflector cup, a scrambler, and a housing to maximize light efficiency through high reflectivity. to form These component materials must be able to withstand high temperatures and minimize the decrease in whiteness due to reduced reflectance and yellowing.
엔지니어링 플라스틱으로서, 폴리에스테르 수지, 이의 공중합체, 이의 블렌드(blend) 등은 각각 유용한 특성을 나타내어, 제품의 내외장재를 포함한 다양한 분야에 적용되고 있으며, 발광다이오드 리플렉터 등의 소재로도 사용되고 있다. 발광다이오드 리플렉터 소재에 주로 사용되는 폴리에스테르 수지는 방향족 폴리에스테르 수지 등의 고내열성 폴리에스테르 수지이다. 고내열성 폴리에스테르 수지는 높은 온도에서 변형이 없고, 내변색 특성이 우수하나, 결정화 속도가 느리고, 기계적 강도가 낮으며, 내충격성 등이 떨어진다는 문제점이 있다.As engineering plastics, polyester resins, copolymers thereof, blends thereof, etc. each exhibit useful properties and are applied to various fields including interior and exterior materials of products, and are also used as materials for light emitting diode reflectors and the like. The polyester resin mainly used for the light emitting diode reflector material is a high heat-resistant polyester resin such as an aromatic polyester resin. The high heat-resistant polyester resin does not deform at high temperatures and has excellent discoloration resistance, but has problems in that the crystallization rate is slow, mechanical strength is low, and impact resistance is poor.
이를 해결하기 위하여, 종래에는 폴리에스테르 수지에 무기 필러 등의 첨가제를 혼합하여 내충격성, 강성 등을 향상시키고자 하였다. 그러나, 무기 필러 등의 첨가제를 과량 사용할 경우, 블리드 아웃(bleed-out) 등의 성형 가공성 저하 문제가 발생할 우려가 있다. 또한, 고반사율을 구현할 수 있는 열가소성 수지 조성물을 얻기 위해서는 백색 안료 등의 함량을 증가시켜야 하나, 이 경우, 백색 안료, 무기 필러 등이 과량 첨가됨에 따라, 오히려 열가소성 수지 조성물의 내충격성 등이 저하될 우려가 있다.In order to solve this problem, conventionally, an additive such as an inorganic filler is mixed with a polyester resin to improve impact resistance, rigidity, and the like. However, when an additive such as an inorganic filler is used in excess, there is a concern that a problem of lowering of moldability such as bleed-out may occur. In addition, in order to obtain a thermoplastic resin composition capable of realizing high reflectance, the content of white pigment, etc. must be increased. In this case, as white pigment and inorganic filler are added in excess, the impact resistance of the thermoplastic resin composition may be reduced There are concerns.
따라서, 상기 문제가 발생되지 않는, 반사율, 반사율 유지율, 박막 성형성, 내충격성, 내열성, 이들의 물성 발란스 등이 우수한 발광다이오드 리플렉터 (소재)의 개발이 필요한 실정이다.Therefore, it is necessary to develop a light emitting diode reflector (material) excellent in reflectance, reflectance retention, thin film formability, impact resistance, heat resistance, and balance of these properties, which does not cause the above problems.
본 발명의 배경기술은 대한민국 공개특허 제10-2013-0076733호 등에 개시되어 있다.Background art of the present invention is disclosed in Korean Patent Laid-Open No. 10-2013-0076733 and the like.
본 발명의 목적은 반사율, 반사율 유지율, 박막 성형성, 내충격성, 내열성, 이들의 물성 발란스 등이 우수한 발광다이오드 리플렉터를 제공하기 위한 것이다.An object of the present invention is to provide a light emitting diode reflector excellent in reflectance, reflectance retention, thin film formability, impact resistance, heat resistance, and balance of physical properties thereof.
본 발명의 다른 목적은 상기 발광다이오드 리플렉터를 포함하는 반도체 장치를 제공하기 위한 것이다.Another object of the present invention is to provide a semiconductor device including the light emitting diode reflector.
본 발명의 상기 및 기타의 목적들은 하기 설명되는 본 발명에 의하여 모두 달성될 수 있다.The above and other objects of the present invention can all be achieved by the present invention described below.
1. 본 발명의 하나의 관점은 발광다이오드 리플렉터에 관한 것이다. 상기 발광다이오드 리플렉터는 하기 화학식 1로 표시되는 반복단위를 포함하는 폴리에스테르 수지 약 100 중량부; 백색 안료 약 5 내지 약 40 중량부; 유리 섬유 약 5 내지 약 30 중량부; 하기 화학식 2로 표시되는 펜타에리스리톨 디포스파이트 화합물 약 0.1 내지 약 3 중량부; 및 DOPO(9,10-디하이드로-9-옥사-10-포스파펜안트렌-10-옥시드) 약 0.1 내지 약 3 중량부;를 포함하는 열가소성 수지 조성물로부터 형성되며, 상기 펜타에리스리톨 디포스파이트 화합물 및 상기 DOPO의 중량비(펜타에리스리톨 디포스파이트 화합물:DOPO)가 약 1 : 0.2 내지 약 1 : 5인 것을 특징으로 한다:1. One aspect of the present invention relates to a light emitting diode reflector. The light emitting diode reflector may include: about 100 parts by weight of a polyester resin including a repeating unit represented by the following Chemical Formula 1; about 5 to about 40 parts by weight of a white pigment; about 5 to about 30 parts by weight of glass fiber; About 0.1 to about 3 parts by weight of a pentaerythritol diphosphite compound represented by the following formula (2); and DOPO (9,10-dihydro-9-oxa-10-phosphaphenanthrene-10-oxide) about 0.1 to about 3 parts by weight; formed from a thermoplastic resin composition comprising the pentaerythritol diphosphite compound and a weight ratio of the DOPO (pentaerythritol diphosphite compound:DOPO) of about 1:0.2 to about 1:5:
[화학식 1][Formula 1]
Figure PCTKR2021017063-appb-I000001
Figure PCTKR2021017063-appb-I000001
상기 화학식 1에서, Ar은 탄소수 6 내지 18의 아릴렌기이고, R1 및 R3는 각각 독립적으로 탄소수 1 내지 10의 선형 알킬렌기이고, R2는 탄소수 5 내지 12의 환형 알킬렌기이다;In Formula 1, Ar is an arylene group having 6 to 18 carbon atoms, R 1 and R 3 are each independently a linear alkylene group having 1 to 10 carbon atoms, and R 2 is a cyclic alkylene group having 5 to 12 carbon atoms;
[화학식 2][Formula 2]
Figure PCTKR2021017063-appb-I000002
Figure PCTKR2021017063-appb-I000002
상기 화학식 2에서, R4 및 R5는 각각 독립적으로 치환 또는 비치환된 탄소수 1 내지 10의 알킬기 또는 치환 또는 비치환된 탄소수 6 내지 20의 아릴기이다.In Formula 2, R 4 and R 5 are each independently a substituted or unsubstituted C 1 to C 10 alkyl group or a substituted or unsubstituted C 6 to C 20 aryl group.
2. 상기 1 구체예에서, 상기 폴리에스테르 수지는 하기 화학식 1a로 표시되는 반복단위를 포함할 수 있다.2. In the first embodiment, the polyester resin may include a repeating unit represented by the following Chemical Formula 1a.
[화학식 1a][Formula 1a]
Figure PCTKR2021017063-appb-I000003
Figure PCTKR2021017063-appb-I000003
3. 상기 1 또는 2 구체예에서, 상기 백색 안료는 산화티탄, 산화아연, 황화아연, 황산아연, 황산바륨, 탄산칼슘 및 알루미나 중 1종 이상을 포함할 수 있다.3. In embodiment 1 or 2, the white pigment may include at least one of titanium oxide, zinc oxide, zinc sulfide, zinc sulfate, barium sulfate, calcium carbonate, and alumina.
4. 상기 1 내지 3 구체예에서, 상기 백색 안료 및 상기 펜타에리스리톨 디포스파이트 화합물의 중량비(백색 안료: 펜타에리스리톨 디포스파이트 화합물)는 약 15 : 1 내지 약 150 : 1일 수 있다.4. In the above 1 to 3 embodiments, the weight ratio of the white pigment to the pentaerythritol diphosphite compound (white pigment: pentaerythritol diphosphite compound) may be about 15:1 to about 150:1.
5. 상기 1 내지 4 구체예에서, 상기 발광다이오드 리플렉터는 ASTM E1331에 의거하여 측정한 90 mm × 50 mm × 2.5 mm 크기 시편의 450 nm 파장 광에 대한 반사율이 약 92 내지 약 99%일 수 있다.5. In the above 1 to 4 embodiments, the light emitting diode reflector may have a reflectance of about 92 to about 99% with respect to 450 nm wavelength light of a 90 mm × 50 mm × 2.5 mm specimen measured according to ASTM E1331. .
6. 상기 1 내지 5 구체예에서, 상기 발광다이오드 리플렉터는 하기 식 1에 따라 산출한 반사율 유지율이 약 99% 이상일 수 있다:6. In the above 1 to 5 embodiments, the light emitting diode reflector may have a reflectance retention calculated according to Equation 1 below about 99% or more:
[식 1][Equation 1]
반사율 유지율(%) = 100 - {[(Rf0 - Rf1) / Rf0] × 100}Reflectance Retention (%) = 100 - {[(Rf 0 - Rf 1 ) / Rf 0 ] × 100}
상기 식 1에서, Rf0는 ASTM E1331에 의거하여 측정한 90 mm × 50 mm × 2.5 mm 크기 시편의 450 nm 파장 광에 대한 초기 반사율이고, Rf1은 상기 시편을 105℃ 조건에서, 500 시간 방치 후, ASTM E1331에 의거하여 측정한 450 nm 파장 광에 대한 반사율이다.In Equation 1, Rf 0 is the initial reflectance with respect to 450 nm wavelength light of a 90 mm × 50 mm × 2.5 mm size specimen measured according to ASTM E1331, and Rf 1 is the specimen at 105° C., left for 500 hours. Then, it is the reflectance with respect to 450 nm wavelength light measured according to ASTM E1331.
7. 상기 1 내지 6 구체예에서, 상기 열가소성 수지 조성물은 성형 온도 300℃, 금형 온도 60℃, 사출압 100 MPa 및 사출속도 100 mm/s의 조건에서 너비 15 mm, 두께 0.5 mm인 스파이럴(spiral) 형태의 금형에서 사출 성형 후 측정한 시편의 스파이럴 플로우(spiral flow) 길이가 약 85 내지 약 150 mm일 수 있다.7. In the above 1 to 6 embodiments, the thermoplastic resin composition is a spiral having a width of 15 mm and a thickness of 0.5 mm under the conditions of a molding temperature of 300° C., a mold temperature of 60° C., an injection pressure of 100 MPa and an injection speed of 100 mm/s. ), the length of the spiral flow of the specimen measured after injection molding in the mold may be about 85 to about 150 mm.
8. 상기 1 내지 7 구체예에서, 상기 발광다이오드 리플렉터는 ASTM D4812에 의거하여 측정한 두께 1/8" 시편의 언노치 아이조드 충격강도가 약 20 내지 약 40 kgf·cm/cm일 수 있다.8. In the above embodiments 1 to 7, the light emitting diode reflector may have an unnotched Izod impact strength of about 20 to about 40 kgf·cm/cm of a 1/8″ thick specimen measured according to ASTM D4812.
9. 상기 1 내지 8 구체예에서, 상기 발광다이오드 리플렉터는 ASTM D648에 의거하여, 응력 1.82 MPa, 승온 속도 120℃/hr의 조건에서 측정한 열변형 온도(HDT)가 약 190 내지 약 270℃일 수 있다.9. In the above 1 to 8 embodiments, the light emitting diode reflector has a heat deflection temperature (HDT) of about 190 to about 270° C., measured under the conditions of a stress of 1.82 MPa and a temperature increase rate of 120° C./hr, according to ASTM D648. can
10. 본 발명의 다른 관점은 반도체 장치에 관한 것이다. 상기 반도체 장치는 1 내지 9 구체예에 따른 발광다이오드 리플렉터를 포함한다.10. Another aspect of the present invention relates to a semiconductor device. The semiconductor device includes the light emitting diode reflectors according to the 1 to 9 embodiments.
본 발명은 반사율, 반사율 유지율, 박막 성형성, 내충격성, 내열성, 이들의 물성 발란스 등이 우수한 발광다이오드 리플렉터 및 이를 포함하는 반도체 장치를 제공하는 발명의 효과를 갖는다.The present invention has the effect of providing a light emitting diode reflector excellent in reflectance, reflectance retention, thin film formability, impact resistance, heat resistance, and balance of physical properties thereof and a semiconductor device including the same.
도 1은 본 발명의 일 실시예에 따른 발광다이오드 리플렉터를 포함하는 반도체 장치의 단면도이다.1 is a cross-sectional view of a semiconductor device including a light emitting diode reflector according to an embodiment of the present invention.
이하, 본 발명을 상세히 설명하면, 다음과 같다.Hereinafter, the present invention will be described in detail as follows.
본 발명에 따른 발광다이오드 리플렉터는 (A) 폴리에스테르 수지; (B) 백색 안료; (C) 유리 섬유; (D) 펜타에리스리톨 디포스파이트 화합물; 및 (E) DOPO (9,10-디하이드로-9-옥사-10-포스파펜안트렌-10-옥시드);를 포함하는 열가소성 수지 조성물로부터 형성된다.A light emitting diode reflector according to the present invention is (A) a polyester resin; (B) white pigment; (C) fiberglass; (D) a pentaerythritol diphosphite compound; and (E) DOPO (9,10-dihydro-9-oxa-10-phosphaphenanthrene-10-oxide);
본 명세서에서, 수치범위를 나타내는 "a 내지 b"는 "≥a 이고 ≤b"으로 정의한다.In the present specification, "a to b" representing a numerical range is defined as "≥a and ≤b".
(A) 폴리에스테르 수지(A) polyester resin
본 발명의 일 구체예에 따른 폴리에스테르 수지는 고온에서도 열가소성 수지 조성물의 내열성 및 내충격성, 강성 등의 기계적 강도 등을 향상시킬 수 있는 것으로서, 하기 화학식 1로 표시되는 반복단위를 포함할 수 있다.The polyester resin according to an embodiment of the present invention is capable of improving the mechanical strength such as heat resistance, impact resistance, and rigidity of the thermoplastic resin composition even at high temperatures, and may include a repeating unit represented by the following formula (1).
[화학식 1][Formula 1]
Figure PCTKR2021017063-appb-I000004
Figure PCTKR2021017063-appb-I000004
상기 화학식 1에서, Ar은 탄소수 6 내지 18의 아릴렌기이고, R1 및 R3는 각각 독립적으로 탄소수 1 내지 10의 선형 알킬렌기이고, R2는 탄소수 5 내지 12의 환형 알킬렌기이다. 여기서, -R1-R2-R3-는 지환족 디올로부터 유래된 것으로서, 전체 탄소수가 7 내지 22일 수 있다. 상기 폴리에스테르 수지는 주쇄에 고리 모양의 구조가 포함되어 높은 용융 온도를 갖는 것으로서, 예를 들면, 약 200℃ 이상일 수 있으나, 이에 제한되지 않는다.In Formula 1, Ar is an arylene group having 6 to 18 carbon atoms, R 1 and R 3 are each independently a linear alkylene group having 1 to 10 carbon atoms, and R 2 is a cyclic alkylene group having 5 to 12 carbon atoms. Here, -R 1 -R 2 -R 3 - is derived from an alicyclic diol, and may have 7 to 22 carbon atoms in total. The polyester resin includes a ring-shaped structure in the main chain and has a high melting temperature, and may be, for example, about 200° C. or higher, but is not limited thereto.
구체예에서, 상기 폴리에스테르 수지는 방향족 디카르복실산 및 그의 유도체 등을 포함하는 디카르복실산 성분과 지환족 디올을 포함하는 디올 성분을 공지된 중축합 방법에 따라 제조한 것일 수 있다.In an embodiment, the polyester resin may be prepared by a known polycondensation method of a dicarboxylic acid component including an aromatic dicarboxylic acid and derivatives thereof and a diol component including an alicyclic diol.
구체예에서, 상기 디카르복실산 성분으로는 테레프탈산, 이소프탈산, 1,2-나프탈렌디카르복실산, 1,4-나프탈렌디카르복실산, 1,5-나프탈렌디카르복실산, 1,6-나프탈렌디카르복실산, 1,7-나프탈렌디카르복실산, 1,8-나프탈렌디카르복실산, 2,3-나프탈렌디카르복실산, 2,6-나프탈렌디카르복실산, 2,7-나프탈렌디카르복실산 등이 사용될 수 있으나, 이에 제한되지 않는다. 이들은 단독 또는 2종 이상 혼합하여 사용할 수 있다.In an embodiment, the dicarboxylic acid component includes terephthalic acid, isophthalic acid, 1,2-naphthalenedicarboxylic acid, 1,4-naphthalenedicarboxylic acid, 1,5-naphthalenedicarboxylic acid, 1,6 -naphthalenedicarboxylic acid, 1,7-naphthalenedicarboxylic acid, 1,8-naphthalenedicarboxylic acid, 2,3-naphthalenedicarboxylic acid, 2,6-naphthalenedicarboxylic acid, 2,7 -Naphthalenedicarboxylic acid and the like may be used, but is not limited thereto. These can be used individually or in mixture of 2 or more types.
구체예에서, 상기 지환족 디올로는 탄소수 7 내지 22의 지환족 디올, 예를 들면 1,4-사이클로헥산디메탄올(CHDM) 등이 사용될 수 있으나, 이에 제한되지 않는다.In an embodiment, the alicyclic diol may include an alicyclic diol having 7 to 22 carbon atoms, for example, 1,4-cyclohexanedimethanol (CHDM), but is not limited thereto.
구체예에서, 상기 폴리에스테르 수지는 하기 화학식 1a로 표시되는 반복단위를 포함하는 폴리시클로헥산디메틸렌테레프탈레이트(PCT) 수지일 수 있다.In an embodiment, the polyester resin may be a polycyclohexanedimethylene terephthalate (PCT) resin including a repeating unit represented by the following Chemical Formula 1a.
[화학식 1a][Formula 1a]
Figure PCTKR2021017063-appb-I000005
Figure PCTKR2021017063-appb-I000005
구체예에서, 상기 폴리에스테르 수지는 겔 투과 크로마토그라피(gel permeation chromatography: GPC)로 헥사플루오로이소프로판올(HFIP) 용매에서 측정한 중량평균분자량이 약 3,000 내지 약 200,000 g/mol, 예를 들면 약 5,000 내지 약 150,000 g/mol일 수 있다. 상기 범위에서 발광다이오드 리플렉터의 박막 성형성, 내충격성, 강성 등이 우수할 수 있다.In an embodiment, the polyester resin has a weight average molecular weight of about 3,000 to about 200,000 g/mol, for example, about 5,000, measured in a hexafluoroisopropanol (HFIP) solvent by gel permeation chromatography (GPC). to about 150,000 g/mol. In the above range, the thin film formability, impact resistance, and rigidity of the light emitting diode reflector may be excellent.
(B) 백색 안료(B) white pigment
본 발명의 일 구체예에 따른 백색 안료는 상기 폴리에스테르 수지에 유리 섬유, 펜타에리스리톨 디포스파이트 화합물, DOPO 등과 함께 적용되어, 발광다이오드 리플렉터의 백색도, 반사율, 반사율 유지율, 박막 성형성, 내충격성, 내열성, 이들의 물성 발란스 등을 향상시킬 수 있는 것으로서, 통상의 발광다이오드 리플렉터에 적용되는 백색 안료를 제한 없이 사용할 수 있다. 예를 들면, 산화티탄, 산화아연, 황화아연, 황산아연, 황산바륨, 탄산칼슘, 알루미나, 연백(white lead, 2PbCO3·Pb(OH)2) 등을 단독으로 사용하거나, 2종 이상 혼합하여 사용할 수 있다. 구체적으로, 결정 구조가 루타일형 또는 정방정계인 산화티탄(TiO2) 등을 사용할 수 있다.The white pigment according to an embodiment of the present invention is applied to the polyester resin together with glass fiber, pentaerythritol diphosphite compound, DOPO, etc. , a white pigment applied to a conventional light emitting diode reflector can be used without limitation as it can improve the balance of their physical properties. For example, titanium oxide, zinc oxide, zinc sulfide, zinc sulfate, barium sulfate, calcium carbonate, alumina, white lead (2PbCO 3 ·Pb(OH) 2 ), etc. are used alone or by mixing two or more types. can be used Specifically, titanium oxide (TiO 2 ) having a crystal structure of a rutile type or a tetragonal system may be used.
구체예에서, 상기 백색 안료의 평균 입경(D50)은 약 0.01 내지 약 2 ㎛, 예를 들면 약 0.05 내지 약 0.7 ㎛일 수 있다. 상기 범위에서 발광다이오드 리플렉터용 열가소성 수지 조성물의 백색도, 반사율 등이 우수할 수 있다. 여기서, 평균 입경(D50)은 입도 분석기(Beckman Coulter社, LS 13 320)로 측정한 수평균 입경이고, D50(분포율이 50% 되는 지점의 입경)으로 특정한 값이다.In an embodiment, the average particle diameter (D50) of the white pigment may be about 0.01 to about 2 μm, for example, about 0.05 to about 0.7 μm. In the above range, the whiteness, reflectance, etc. of the thermoplastic resin composition for a light emitting diode reflector may be excellent. Here, the average particle diameter (D50) is the number average particle diameter measured with a particle size analyzer (Beckman Coulter, LS 13 320), and is a value specified by D50 (the particle diameter at the point where the distribution ratio is 50%).
구체예에서, 상기 백색 안료는 유기 표면처리제 또는 무기 표면처리제로 표면 처리된 것을 사용할 수 있다. 상기 유기 표면처리제로는 실란 커플링제, 폴리디메틸실록산, 트리메틸올프로판(TMP), 펜타에리스리톨, 이들의 조합 등이 사용될 수 있으나 이에 제한되지 않는다. 예를 들면, 상기 실란 커플링제로는 비닐트리에톡시실란, 2-아미노프로필트리에톡시실란, 2-글리시독시프로필트리에톡시실란 등을 사용할 수 있다. 또한, 상기 무기 표면처리제로는 산화알루미늄(알루미나, Al2O3), 이산화규소(실리카, SiO2), 지르코니아(이산화지르콘, ZrO2), 규산나트륨, 알루민산나트륨, 규산나트륨알루미늄, 산화아연, 운모 등이 사용될 수 있으며, 이들은 2종 이상 혼합하여 사용할 수도 있다. 상기 유기 표면처리제 또는 무기표면처리제는 표면 처리 시, 백색 안료 약 100 중량부에 대하여 약 5 중량부 이하로 포함될 수 있다. 상기 범위에서 발광다이오드 리플렉터의 백색도 및 반사율 등이 더욱 우수할 수 있다.In an embodiment, the white pigment may be surface-treated with an organic surface treatment agent or an inorganic surface treatment agent. The organic surface treatment agent may include, but is not limited to, a silane coupling agent, polydimethylsiloxane, trimethylolpropane (TMP), pentaerythritol, and combinations thereof. For example, as the silane coupling agent, vinyltriethoxysilane, 2-aminopropyltriethoxysilane, 2-glycidoxypropyltriethoxysilane, or the like may be used. In addition, as the inorganic surface treatment agent, aluminum oxide (alumina, Al 2 O 3 ), silicon dioxide (silica, SiO 2 ), zirconia (zircon dioxide, ZrO 2 ), sodium silicate, sodium aluminate, sodium aluminum silicate, zinc oxide , mica, etc. may be used, and two or more of them may be mixed and used. The organic surface treatment agent or inorganic surface treatment agent may be included in an amount of about 5 parts by weight or less based on about 100 parts by weight of the white pigment during the surface treatment. In the above range, the whiteness and reflectance of the light emitting diode reflector may be more excellent.
구체예에서, 상기 백색 안료는 상기 폴리에스테르 수지 약 100 중량부에 대하여, 약 5 내지 약 40 중량부, 예를 들면 약 15 내지 약 40 중량부로 포함될 수 있다. 상기 백색 안료의 함량이 폴리에스테르 수지 약 100 중량부에 대하여, 약 5 중량부 미만일 경우, 발광다이오드 리플렉터의 백색도, 반사율, 내충격성, 내열성 등이 저하될 우려가 있고, 약 40 중량부를 초과할 경우, 발광다이오드 리플렉터의 반사율 유지율, 박막 성형성 등이 저하될 우려가 있다.In an embodiment, the white pigment may be included in an amount of about 5 to about 40 parts by weight, for example, about 15 to about 40 parts by weight based on about 100 parts by weight of the polyester resin. When the content of the white pigment is less than about 5 parts by weight based on about 100 parts by weight of the polyester resin, there is a fear that the whiteness, reflectance, impact resistance, heat resistance, etc. of the light emitting diode reflector may decrease, and when it exceeds about 40 parts by weight , there is a possibility that the reflectance retention rate, thin film formability, etc. of the light emitting diode reflector may be deteriorated.
(C) 유리 섬유(C) Glass fiber
본 발명의 유리 섬유는 상기 폴리에스테르 수지에 백색 안료, 펜타에리스리톨 디포스파이트 화합물, DOPO 등과 함께 적용되어, 발광다이오드 리플렉터의 강성, 반사율, 반사율 유지율, 박막 성형성, 내충격성, 내열성, 이들의 물성 발란스 등을 향상시킬 수 있는 것으로서, 원형 단면(circular cross-sectional) 유리 섬유, 평판형(flat-shaped) 유리 섬유, 이들의 조합 등을 포함할 수 있다.The glass fiber of the present invention is applied to the polyester resin together with a white pigment, pentaerythritol diphosphite compound, DOPO, etc. to balance the rigidity, reflectance, reflectance retention, thin film formability, impact resistance, heat resistance, and physical properties of the light emitting diode reflector. and the like, may include circular cross-sectional glass fibers, flat-shaped glass fibers, combinations thereof, and the like.
구체예에서, 상기 원형 단면 유리 섬유는 광학 현미경(optical microscope)으로 측정한 원형 단면의 평균 직경이 약 5 내지 약 15 ㎛, 예를 들면 약 6 내지 약 12 ㎛인 유리 섬유일 수 있다. 상기 범위에서, 발광다이오드 리플렉터용 열가소성 수지 조성물의 강성, 반사율, 내충격성 등이 우수할 수 있다.In an embodiment, the circular cross-section glass fiber may be a glass fiber having an average diameter of a circular cross-section measured with an optical microscope of about 5 to about 15 μm, for example, about 6 to about 12 μm. In the above range, the rigidity, reflectance, impact resistance, etc. of the thermoplastic resin composition for a light emitting diode reflector may be excellent.
구체예에서, 상기 평판형 유리 섬유는 광학 현미경으로 측정한 단면의 종횡비가 약 1.5 내지 약 4, 예를 들면 약 2 내지 약 4일 수 있고, 단경이 약 6 내지 약 10 ㎛, 예를 들면 약 6 내지 약 9 ㎛일 수 있다. 상기 범위에서, 발광다이오드 리플렉터용 열가소성 수지 조성물의 내충격성, 반사율 등이 우수할 수 있다.In an embodiment, the flat glass fiber may have an aspect ratio of a cross section of about 1.5 to about 4, for example, about 2 to about 4, as measured by an optical microscope, and a minor diameter of about 6 to about 10 μm, for example, about 6 to about 9 μm. Within the above range, the thermoplastic resin composition for a light emitting diode reflector may have excellent impact resistance, reflectance, and the like.
구체예에서, 상기 유리 섬유는 압출 전 평균 길이가 약 1 내지 약 5 mm일 수 있고, 압출(가공) 후 평균 길이가 약 100 내지 약 700 ㎛, 예를 들면 약 110 내지 약 690 ㎛일 수 있다. 상기 범위에서 발광다이오드 리플렉터용 열가소성 수지 조성물의 내충격성, 강성, 외관 특성 등이 우수할 수 있다.In an embodiment, the glass fiber may have an average length of about 1 to about 5 mm before extrusion, and an average length of about 100 to about 700 μm after extrusion (processing), for example, about 110 to about 690 μm. . In the above range, the thermoplastic resin composition for a light emitting diode reflector may have excellent impact resistance, rigidity, appearance characteristics, and the like.
구체예에서, 상기 유리 섬유는 폴리에스테르 수지 등과의 결합력을 증가시키기 위하여, 표면에 표면처리제를 코팅한 것을 사용할 수 있다. 상기 표면처리제로는 실란계 화합물, 우레탄계 화합물, 에폭시계 화합물 등을 사용할 수 있으나, 이에 제한되지 않는다.In an embodiment, the glass fiber coated with a surface treatment agent may be used in order to increase bonding strength with a polyester resin or the like. As the surface treatment agent, a silane-based compound, a urethane-based compound, or an epoxy-based compound may be used, but is not limited thereto.
구체예에서, 상기 유리 섬유는 상기 폴리에스테르 수지 약 100 중량부에 대하여, 약 5 내지 약 30 중량부, 예를 들면 약 5 내지 약 25 중량부로 포함될 수 있다. 상기 유리 섬유의 함량이 폴리에스테르 수지 약 100 중량부에 대하여, 약 5 중량부 미만일 경우, 발광다이오드 리플렉터의 내충격성, 내열성, 강성 등이 저하될 우려가 있고, 약 30 중량부를 초과할 경우, 발광다이오드 리플렉터의 반사율 유지율, 박막 성형성 등이 저하될 우려가 있다.In an embodiment, the glass fiber may be included in an amount of about 5 to about 30 parts by weight, for example, about 5 to about 25 parts by weight based on about 100 parts by weight of the polyester resin. When the content of the glass fiber is less than about 5 parts by weight based on about 100 parts by weight of the polyester resin, there is a risk that the impact resistance, heat resistance, rigidity, etc. of the light emitting diode reflector may decrease, and when it exceeds about 30 parts by weight, light emission There is a possibility that the reflectance retention of the diode reflector, thin film formability, and the like may decrease.
(D) 펜타에리스리톨 디포스파이트 화합물(D) Pentaerythritol diphosphite compound
본 발명의 일 구체예에 따른 펜타에리스리톨 디포스파이트(pentaerythritol diphosphite) 화합물은 상기 폴리에스테르 수지에 백색 안료, 유리 섬유, DOPO 등과 함께 적용되어, 발광다이오드 리플렉터의 반사율, 반사율 유지율, 박막 성형성, 내충격성, 내열성, 이들의 물성 발란스 등을 향상시킬 수 있는 것으로서, 하기 화학식 2로 표시되는 펜타에리스리톨 디포스파이트 화합물을 사용할 수 있다.The pentaerythritol diphosphite compound according to an embodiment of the present invention is applied to the polyester resin together with a white pigment, glass fiber, DOPO, etc. , heat resistance, balance of these physical properties, etc. can be improved, the pentaerythritol diphosphite compound represented by the following formula (2) can be used.
[화학식 2][Formula 2]
Figure PCTKR2021017063-appb-I000006
Figure PCTKR2021017063-appb-I000006
상기 화학식 2에서, R4 및 R5는 각각 독립적으로 치환 또는 비치환된 탄소수 1 내지 20의 알킬기 또는 치환 또는 비치환된 탄소수 6 내지 20의 아릴기이다.In Formula 2, R 4 and R 5 are each independently a substituted or unsubstituted C 1 to C 20 alkyl group or a substituted or unsubstituted C 6 to C 20 aryl group.
여기서, 상기 "치환"은 수소 원자가 할로겐, C1 내지 C20의 알킬, C1 내지 C20의 할로알킬, C6 내지 C20의 아릴, C2 내지 C20의 헤테로아릴, 이들의 조합 등의 치환기로 치환된 것을 의미한다.Here, the "substitution" means that a hydrogen atom is halogen, C 1 to C 20 alkyl, C 1 to C 20 haloalkyl, C 6 to C 20 aryl, C 2 to C 20 heteroaryl, combinations thereof, etc. It means substituted with a substituent.
구체예에서, 상기 펜타에리스리톨 디포스파이트 화합물은 비스(2,6-디-tert-부틸-4-메틸페닐)펜타에리스리톨 디포스파이트, 트리(2,4-디-tert-부틸페닐)펜타에리스리톨 포스파이트, 비스(2,4-디큐밀페닐)펜타에리스리톨 디포스파이트, 이들의 조합 등일 수 있다.In an embodiment, the pentaerythritol diphosphite compound is bis(2,6-di-tert-butyl-4-methylphenyl)pentaerythritol diphosphite, tri(2,4-di-tert-butylphenyl)pentaerythritol phosphite, bis(2,4-dicumylphenyl)pentaerythritol diphosphite, combinations thereof, and the like.
구체예에서, 상기 펜타에리스리톨 디포스파이트 화합물은 상기 폴리에스테르 수지 약 100 중량부에 대하여, 약 0.1 내지 약 3 중량부, 예를 들면 약 0.2 내지 약 1 중량부로 포함될 수 있다. 상기 펜타에리스리톨 디포스파이트 화합물의 함량이 폴리에스테르 수지 약 100 중량부에 대하여, 약 0.1 중량부 미만일 경우, 발광다이오드 리플렉터의 반사율 유지율, 내열성 등이 저하될 우려가 있고, 약 3 중량부를 초과할 경우, 발광다이오드 리플렉터의 반사율, 박막 성형성, 내충격성 등이 저하될 우려가 있다.In an embodiment, the pentaerythritol diphosphite compound may be included in an amount of about 0.1 to about 3 parts by weight, for example, about 0.2 to about 1 part by weight, based on about 100 parts by weight of the polyester resin. When the content of the pentaerythritol diphosphite compound is less than about 0.1 parts by weight based on about 100 parts by weight of the polyester resin, there is a fear that the reflectance retention rate and heat resistance of the light emitting diode reflector may decrease, and when it exceeds about 3 parts by weight, The reflectance, thin film formability, impact resistance, etc. of the light emitting diode reflector may be deteriorated.
구체예에서, 상기 백색 안료(B) 및 상기 펜타에리스리톨 디포스파이트 화합물(D)의 중량비(B:D)는 약 15 : 1 내지 약 150 : 1, 예를 들면 약 25 : 1 내지 약 125 : 1일 수 있다. 상기 범위에서, 발광다이오드 리플렉터의 반사율, 반사율 유지율 등이 더 우수할 수 있다.In an embodiment, the weight ratio (B:D) of the white pigment (B) and the pentaerythritol diphosphite compound (D) is from about 15:1 to about 150:1, for example from about 25:1 to about 125:1 can be In the above range, the reflectance of the light emitting diode reflector, the reflectance retention rate, etc. may be more excellent.
(E) DOPO(E) DOPO
본 발명의 일 구체예에 따른 DOPO(9,10-디하이드로-9-옥사-10-포스파펜안트렌-10-옥시드(9,10-dihydro-9-oxa-10-phosphaphenanthrene-10-oxide)는 상기 폴리에스테르 수지에 백색 안료, 유리 섬유, 펜타에리스리톨 디포스파이트 화합물 등과 함께 적용되어, 발광다이오드 리플렉터의 반사율, 반사율 유지율, 박막 성형성, 내충격성, 내열성, 이들의 물성 발란스 등을 향상시킬 수 있는 것으로서, 통상의 열가소성 수지 조성물에 사용되는 DOPO를 적용할 수 있다.DOPO (9,10-dihydro-9-oxa-10-phosphaphenanthrene-10-oxide (9,10-dihydro-9-oxa-10-phosphaphenanthrene-10-oxide) according to an embodiment of the present invention ) is applied to the polyester resin together with a white pigment, glass fiber, pentaerythritol diphosphite compound, etc. to improve the reflectance, reflectance retention, thin film formability, impact resistance, heat resistance, and balance of these properties of the light emitting diode reflector. As such, it is possible to apply DOPO used in conventional thermoplastic resin compositions.
구체예에서, 상기 DOPO는 상기 폴리에스테르 수지 약 100 중량부에 대하여, 약 0.1 내지 약 3 중량부, 예를 들면 약 0.2 내지 약 1 중량부로 포함될 수 있다. 상기 DOPO의 함량이 폴리에스테르 수지 약 100 중량부에 대하여, 약 0.1 중량부 미만일 경우, 발광다이오드 리플렉터의 반사율 유지율, 박막 성형성 등이 저하될 우려가 있고, 약 3 중량부를 초과할 경우, 발광다이오드 리플렉터의 내열성 등이 저하될 우려가 있다.In an embodiment, the DOPO may be included in an amount of about 0.1 to about 3 parts by weight, for example, about 0.2 to about 1 part by weight, based on 100 parts by weight of the polyester resin. When the content of DOPO is less than about 0.1 parts by weight based on about 100 parts by weight of the polyester resin, there is a risk that the reflectance retention rate and thin film formability of the light emitting diode reflector may be deteriorated, and when it exceeds about 3 parts by weight, the light emitting diode There exists a possibility that the heat resistance of a reflector, etc. may fall.
구체예에서, 상기 펜타에리스리톨 디포스파이트 화합물(D) 및 상기 DOPO(E)의 중량비(D:E)는 약 1 : 0.2 내지 약 1 : 5, 예를 들면 약 1 : 0.3 내지 약 1 : 3일 수 있다. 상기 중량비(D:E)가 약 1 : 0.2 미만일 경우, 발광다이오드 리플렉터의 반사율, 반사율 유지율 등이 저하될 우려가 있고, 약 1 : 5를 초과할 경우, 발광다이오드 리플렉터의 반사율 유지율, 내열성 등이 저하될 우려가 있다.In an embodiment, the weight ratio (D:E) of the pentaerythritol diphosphite compound (D) and the DOPO (E) is from about 1: 0.2 to about 1: 5, for example from about 1: 0.3 to about 1: 3 days. can When the weight ratio (D:E) is less than about 1: 0.2, there is a fear that the reflectance and reflectance retention of the light emitting diode reflector may be lowered, and when it exceeds about 1: 5, the reflectance retention of the light emitting diode reflector, heat resistance, etc. There is a risk of deterioration.
본 발명의 일 구체예에 따른 열가소성 수지 조성물은 목적하는 효과를 손상시키지 않는 범위 내에서 용도에 따라 통상의 첨가제를 더 포함할 수 있다. 상기 첨가제로는 산화방지제, 난연제, 난연보조제, 적하방지제, 핵제, 이형제, 항균제, 계면활성제, 커플링제, 가소제, 상용화제, 활제, 정전기 방지제, 이들의 조합 등을 예시할 수 있으나, 이에 제한되지 않는다.The thermoplastic resin composition according to one embodiment of the present invention may further include conventional additives according to the use within the range that does not impair the desired effect. Examples of the additive include antioxidants, flame retardants, flame retardant auxiliary agents, anti-drip agents, nucleating agents, mold release agents, antibacterial agents, surfactants, coupling agents, plasticizers, compatibilizers, lubricants, antistatic agents, combinations thereof, and the like, but are not limited thereto. does not
구체예에서, 상기 첨가제 사용 시, 그 함량은 상기 폴리에스테르 수지 약 100 중량부에 대하여 약 20 중량부 이하, 예를 들면 약 0.1 내지 약 15 중량부일 수 있으나, 이에 제한되지 않는다.In an embodiment, when the additive is used, its content may be about 20 parts by weight or less, for example, about 0.1 to about 15 parts by weight based on about 100 parts by weight of the polyester resin, but is not limited thereto.
본 발명의 일 구체예에 따른 열가소성 수지 조성물은 공지의 방법을 통해 제조될 수 있다. 예를 들면, 각각의 구성 성분과 필요에 따라, 첨가제를 헨셀믹서, V 블렌더, 텀블러 블렌더, 리본 블렌더 등으로 혼합하고, 이를 일축 압출기 또는 이축 압출기를 이용하여 약 250 내지 약 350℃ 온도에서 용융 압출하여 펠렛상으로 제조할 수 있다.The thermoplastic resin composition according to an embodiment of the present invention may be prepared through a known method. For example, each component and, if necessary, additives are mixed with a Henschel mixer, V blender, tumbler blender, ribbon blender, etc., and melt-extruded at a temperature of about 250 to about 350° C. using a single screw extruder or twin screw extruder. It can be prepared in the form of pellets.
본 발명에 따른 발광다이오드 리플렉터는 상기 열가소성 수지 조성물로부터 형성된다. 예를 들면, 상기 열가소성 수지 조성물을 이용하여, 사출 성형, 이중 사출 성형, 블로우 성형, 압출 성형, 열 성형 등의 공지된 성형 방법으로 성형품을 제조할 수 있다.The light emitting diode reflector according to the present invention is formed from the thermoplastic resin composition. For example, by using the thermoplastic resin composition, a molded article may be manufactured by a known molding method such as injection molding, double injection molding, blow molding, extrusion molding, or thermoforming.
구체예에서, 상기 발광다이오드 리플렉터는 ASTM E1331에 의거하여 측정한 90 mm × 50 mm × 2.5 mm 크기 시편의 450 nm 파장 광에 대한 반사율이 약 92 내지 약 99%, 예를 들면 약 94 내지 약 98%일 수 있다.In an embodiment, the light emitting diode reflector has a reflectance of about 92 to about 99%, for example, about 94 to about 98, with respect to 450 nm wavelength light of a 90 mm × 50 mm × 2.5 mm specimen measured according to ASTM E1331. It can be %.
구체예에서, 상기 발광다이오드 리플렉터는 하기 식 1에 따라 산출한 반사율 유지율이 약 99% 이상일 수 있다.In an embodiment, the light emitting diode reflector may have a reflectance retention calculated according to Equation 1 below about 99% or more.
[식 1][Equation 1]
반사율 유지율(%) = 100 - {[(Rf0 - Rf1) / Rf0] × 100}Reflectance Retention (%) = 100 - {[(Rf 0 - Rf 1 ) / Rf 0 ] × 100}
상기 식 1에서, Rf0는 ASTM E1331에 의거하여 측정한 90 mm × 50 mm × 2.5 mm 크기 시편의 450 nm 파장 광에 대한 초기 반사율이고, Rf1은 상기 시편을 105℃ 조건에서, 500 시간 방치 후, ASTM E1331에 의거하여 측정한 450 nm 파장 광에 대한 반사율이다.In Equation 1, Rf 0 is the initial reflectance with respect to 450 nm wavelength light of a 90 mm × 50 mm × 2.5 mm size specimen measured according to ASTM E1331, and Rf 1 is the specimen at 105° C., left for 500 hours. Then, it is the reflectance with respect to 450 nm wavelength light measured according to ASTM E1331.
구체예에서, 상기 열가소성 수지 조성물은 성형 온도 300℃, 금형 온도 60℃, 사출압 100 MPa 및 사출속도 100 mm/s의 조건에서 너비 15 mm, 두께 0.5 mm인 스파이럴(spiral) 형태의 금형에서 사출 성형 후 측정한 시편의 스파이럴 플로우(spiral flow) 길이가 약 85 내지 약 150 mm, 예를 들면 약 87 내지 약 120 mm일 수 있다.In an embodiment, the thermoplastic resin composition is injected in a spiral mold having a width of 15 mm and a thickness of 0.5 mm under the conditions of a molding temperature of 300° C., a mold temperature of 60° C., an injection pressure of 100 MPa and an injection speed of 100 mm/s. A spiral flow length of the specimen measured after molding may be about 85 to about 150 mm, for example, about 87 to about 120 mm.
구체예에서, 상기 발광다이오드 리플렉터는 ASTM D4812에 의거하여 측정한 두께 1/8" 시편의 언노치 아이조드 충격강도가 약 20 내지 약 40 kgf·cm/cm, 예를 들면 약 20 내지 약 35 kgf·cm/cm일 수 있다.In an embodiment, the light emitting diode reflector has an unnotched Izod impact strength of about 20 to about 40 kgf·cm/cm, for example, about 20 to about 35 kgf·· cm/cm.
구체예에서, 상기 발광다이오드 리플렉터는 ASTM D648에 의거하여, 응력 1.82 MPa, 승온 속도 120℃/hr의 조건에서 측정한 열변형 온도(HDT)가 약 190 내지 약 270℃, 예를 들면 191 내지 240℃일 수 있다.In an embodiment, the light emitting diode reflector has a heat deflection temperature (HDT) of about 190 to about 270° C., for example 191 to 240, measured under the conditions of a stress of 1.82 MPa and a temperature increase rate of 120° C./hr according to ASTM D648 °C.
구체예에서, 상기 발광다이오드 리플렉터는 반사율, 반사율 유지율, 박막 성형성, 내충격성, 내열성, 이들의 물성 발란스 등이 우수하여, 광을 반사하는 용도라면 제한되지 않고 적용할 수 있다. 예를 들면, 각종 전기, 전자 제품의 부품, 실내외 조명, 자동차 조명, 표시 기기 등의 발광 장치용 반사판 등으로 유용하다.In a specific embodiment, the light emitting diode reflector is excellent in reflectance, reflectance retention, thin film moldability, impact resistance, heat resistance, balance of these properties, etc., so long as it is used for reflecting light, it can be applied without limitation. For example, it is useful as a reflection plate for light emitting devices such as parts of various electric and electronic products, indoor and outdoor lighting, automobile lighting, and display devices.
도 1은 본 발명의 일 구체예에 따른 발광다이오드 리플렉터를 포함하는 반도체 장치의 단면도이다. 도 1에 도시된 바와 같이, 본 발명의 발광다이오드 리플렉터는 컵 형태의 리플렉터로 성형될 수 있으며, 기타 다양한 형태로 형성될 수 있다. 상기 반도체 장치는 기판(3) 상부에 전극(2)이 형성되고, 상기 전극(2)에 발광다이오드(LED, 6)가 장착된다. 상기 발광다이오드(LED, 6)는 와이어(5)를 통해 전극(2)에 연결된다. 리플렉터(1)는 컵 형태를 가지며 발광다이오드(LED, 6)가 탑재될 수 있도록 오목부를 갖는다. 상기 오목부에는 발광다이오드(LED, 6)가 외부로부터 보호될 수 있도록 밀봉수지(4)에 의해 봉지된다. 상기 구성은 본 발명이 속하는 분야에서 통상의 지식을 가진 자라면 이러한 기재로부터 다양한 수정 및 변형이 가능하다.1 is a cross-sectional view of a semiconductor device including a light emitting diode reflector according to an embodiment of the present invention. 1, the light emitting diode reflector of the present invention may be formed into a cup-shaped reflector, and may be formed in various other forms. In the semiconductor device, an electrode 2 is formed on a substrate 3 , and a light emitting diode (LED) 6 is mounted on the electrode 2 . The light emitting diode LED 6 is connected to the electrode 2 via a wire 5 . The reflector 1 has a cup shape and has a recess so that the light emitting diodes LED 6 can be mounted thereon. The concave portion is sealed with a sealing resin (4) so that the light emitting diode (LED, 6) can be protected from the outside. The configuration is capable of various modifications and variations from these descriptions by those of ordinary skill in the art to which the present invention pertains.
이하, 실시예를 통하여 본 발명을 보다 구체적으로 설명하고자 하나, 이러한 실시예들은 단지 설명의 목적을 위한 것으로, 본 발명을 제한하는 것으로 해석되어서는 안 된다.Hereinafter, the present invention will be described in more detail through examples, but these examples are for illustrative purposes only and should not be construed as limiting the present invention.
실시예Example
하기 실시예 및 비교예에서 사용된 각 성분의 사양은 다음과 같다.The specifications of each component used in the following Examples and Comparative Examples are as follows.
(A) 폴리에스테르 수지(A) polyester resin
폴리시클로헥산디메틸렌테레프탈레이트 수지(제조사: SK Chemicals社, 제품명: Skypura 0502)를 사용하였다.Polycyclohexanedimethylene terephthalate resin (manufacturer: SK Chemicals, product name: Skypura 0502) was used.
(B) 백색 안료(B) white pigment
산화티탄(TiO2, 제조사: Chemours社, 제품명: R-103)을 사용하였다.Titanium oxide (TiO 2 , manufacturer: Chemours, product name: R-103) was used.
(C) 유리 섬유(C) Glass fiber
원형 단면 유리 섬유(제조사: CPIC社, 제품명: ECS303W)를 사용하였다.A circular cross-section glass fiber (manufacturer: CPIC, product name: ECS303W) was used.
(D) 인계 화합물(D) phosphorus compounds
(D1) 펜타에리스리톨 디포스파이트 화합물로, 비스(2,6-디-tert-부틸-4-메틸페닐)펜타에리스리톨 디포스파이트(제조사: Adeka社, 제품명: ADK STAB PEP-36)를 사용하였다.(D1) As the pentaerythritol diphosphite compound, bis(2,6-di-tert-butyl-4-methylphenyl)pentaerythritol diphosphite (manufacturer: Adeka, product name: ADK STAB PEP-36) was used.
(D2) 트리페닐포스페이트(제조사: ICL社, 제품명: PHOSFLEX 31L)를 사용하였다.(D2) Triphenyl phosphate (manufacturer: ICL, product name: PHOSFLEX 31L) was used.
(E) DOPO계 화합물(E) DOPO compounds
(E1)DOPO(9,10-디하이드로-9-옥사-10-포스파펜안트렌-10-옥시드, 제조사: Pharmicell社, 제품명: IDB-DPP)를 사용하였다.(E1) DOPO (9,10-dihydro-9-oxa-10-phosphaphenanthrene-10-oxide, manufacturer: Pharmicell, product name: IDB-DPP) was used.
(E2) DOPO 유도체(3-하이드록시페닐포스피닐 프로파노익 액시드, 제조사: Pharmicell社, 제품명: IDB-3-HPP)를 사용하였다.(E2) A DOPO derivative (3-hydroxyphenylphosphinyl propanoic acid, manufacturer: Pharmicell, product name: IDB-3-HPP) was used.
실시예 1 내지 9 및 비교예 1 내지 12Examples 1 to 9 and Comparative Examples 1 to 12
상기 각 구성 성분을 하기 표 1, 2 및 3에 기재된 바와 같은 함량으로 첨가한 후, 약 300℃에서 압출하여 펠렛(열가소성 수지 조성물)을 제조하였다. 압출은 L/D=36, 직경 45 mm인 이축 압출기를 사용하였으며, 제조된 펠렛은 약 100℃에서 약 4시간 동안 건조 후, 6 oz 사출기(성형 온도: 약 300℃, 금형 온도: 약 130℃)에서 사출하여 발광다이오드 리플렉터 시편을 제조하였다. 제조된 시편에 대하여, 하기의 방법으로 물성을 측정하고, 그 결과를 표 1, 2 및 3에 나타내었다.After adding each of the components in the amounts as shown in Tables 1, 2 and 3 below, extrusion was performed at about 300° C. to prepare pellets (thermoplastic resin composition). For extrusion, a twin-screw extruder with L/D=36 and a diameter of 45 mm was used, and the prepared pellets were dried at about 100° C. for about 4 hours, and then a 6 oz injection machine (molding temperature: about 300° C., mold temperature: about 130° C.) ) to prepare a light emitting diode reflector specimen by injection. With respect to the prepared specimen, the physical properties were measured by the following method, and the results are shown in Tables 1, 2 and 3.
물성 측정 방법How to measure physical properties
(1) 반사율(단위: %): ASTM E1331에 의거하여, 450 nm 파장 광(LED 광원)에 대한 90 mm × 50 mm × 2.5 mm 크기 시편의 반사율(SCI(specular component included) 모드 사용)을 측정하였다. 반사율 측정기로서 코니카 미놀타社의 CM-3600d를 사용하였다.(1) Reflectance (unit: %): According to ASTM E1331, measure the reflectance (using the SCI (specular component included) mode) of a 90 mm × 50 mm × 2.5 mm size specimen for 450 nm wavelength light (LED light source) did CM-3600d from Konica Minolta was used as a reflectance meter.
(2) 반사율 유지율(단위: %): 하기 식 1에 따라, 반사율 유지율을 산출하였다.(2) Reflectance retention (unit: %): According to the following formula 1, the reflectance retention was calculated.
[식 1][Equation 1]
반사율 유지율(%) = 100 - {[(Rf0 - Rf1) / Rf0] × 100}Reflectance Retention (%) = 100 - {[(Rf 0 - Rf 1 ) / Rf 0 ] × 100}
상기 식 1에서, Rf0는 ASTM E1331에 의거하여 측정한 90 mm × 50 mm × 2.5 mm 크기 시편의 450 nm 파장 광에 대한 초기 반사율이고, Rf1은 상기 시편을 105℃ 조건에서, 500 시간 방치 후, ASTM E1331에 의거하여 측정한 450 nm 파장 광에 대한 반사율이다.In Equation 1, Rf 0 is the initial reflectance with respect to 450 nm wavelength light of a 90 mm × 50 mm × 2.5 mm size specimen measured according to ASTM E1331, and Rf 1 is the specimen at 105° C., left for 500 hours. Then, it is the reflectance with respect to 450 nm wavelength light measured according to ASTM E1331.
(3) 스파이럴 플로우(spiral flow) 길이(단위: mm): 상기 열가소성 수지 조성물을 성형 온도 320℃, 금형 온도 60℃, 사출압 100 MPa 및 사출속도 100 mm/s의 조건에서 너비 15 mm, 두께 0.5 mm인 스파이럴(spiral) 형태의 금형에서 사출 성형 후 측정한 시편의 스파이럴 플로우 길이를 측정하여 박막 성형성을 평가하였다.(3) Spiral flow length (unit: mm): The thermoplastic resin composition was subjected to a molding temperature of 320° C., a mold temperature of 60° C., an injection pressure of 100 MPa, and an injection speed of 100 mm/s, with a width of 15 mm and a thickness of 100 mm/s. Thin film moldability was evaluated by measuring the length of the spiral flow of the specimen measured after injection molding in a 0.5 mm spiral mold.
(4) 언노치 아이조드 충격강도(단위: kgf·cm/cm): ASTM D4812에 의거하여, 1/8" 두께 시편의 언노치(unnotched) 아이조드(Izod) 충격강도를 측정하였다.(4) Unnotched Izod impact strength (unit: kgf·cm/cm): According to ASTM D4812, the unnotched Izod impact strength of a 1/8″ thick specimen was measured.
(5) 열변형 온도(단위: ℃): ASTM D648에 의거하여, 응력 1.82 MPa, 승온 속도 120℃/hr의 조건에서 열변형 온도(HDT)를 측정하였다.(5) Heat deflection temperature (unit: °C): According to ASTM D648, the heat deflection temperature (HDT) was measured under the conditions of a stress of 1.82 MPa and a temperature increase rate of 120 °C/hr.
실시예Example
1One 22 33 44 55 66 77 88 99
(A) (중량부)(A) (parts by weight) 100100 100100 100100 100100 100100 100100 100100 100100 100100
(B) (중량부)(B) (parts by weight) 1515 2525 4040 2525 2525 2525 2525 2525 2525
(C) (중량부)(C) (parts by weight) 1515 1515 1515 55 2525 1515 1515 1515 1515
(D1) (중량부)(D1) (parts by weight) 0.60.6 0.60.6 0.60.6 0.60.6 0.60.6 0.20.2 1.01.0 0.60.6 0.60.6
(D2) (중량부)(D2) (parts by weight) -- -- -- -- -- -- -- -- --
(E1) (중량부)(E1) (parts by weight) 0.60.6 0.60.6 0.60.6 0.60.6 0.60.6 0.60.6 0.60.6 0.20.2 1.01.0
(E2) (중량부)(E2) (parts by weight) -- -- -- -- -- -- -- -- --
(초기) 반사율(%)(initial) reflectance (%) 94.694.6 95.695.6 96.096.0 95.895.8 95.095.0 95.695.6 95.595.5 95.695.6 95.795.7
반사율 유지율(%)Reflectance Retention (%) 99.399.3 99.299.2 99.199.1 99.299.2 99.299.2 99.199.1 99.299.2 99.399.3 99.599.5
스파이럴 플로우 길이 (mm)Spiral flow length (mm) 109109 103103 9090 108108 8787 105105 9797 100100 109109
언노치 아이조드 충격강도 (kgf·cm/cm)Unnotched Izod impact strength (kgf cm/cm) 2525 2727 3030 2121 3434 2626 2626 2727 2828
열변형 온도 (℃)Heat Deflection Temperature (℃) 200200 210210 218218 200200 235235 206206 221221 214214 192192
비교예comparative example
1One 22 33 44 55 66
(A) (중량부)(A) (parts by weight) 100100 100100 100100 100100 100100 100100
(B) (중량부)(B) (parts by weight) 0.010.01 4545 2525 2525 2525 2525
(C) (중량부)(C) (parts by weight) 1515 1515 0.010.01 3333 1515 1515
(D1) (중량부)(D1) (parts by weight) 0.60.6 0.60.6 0.60.6 0.60.6 0.070.07 66
(D2) (중량부)(D2) (parts by weight) -- -- -- -- -- --
(E1) (중량부)(E1) (parts by weight) 0.60.6 0.60.6 0.60.6 0.60.6 0.60.6 0.60.6
(E2) (중량부)(E2) (parts by weight) -- -- -- -- -- --
(초기) 반사율(%)(initial) reflectance (%) 65.165.1 96.396.3 96.096.0 94.694.6 95.595.5 92.492.4
반사율 유지율(%)Reflectance Retention (%) 99.499.4 98.798.7 98.998.9 98.998.9 98.598.5 99.599.5
스파이럴 플로우 길이 (mm)Spiral flow length (mm) 130130 7979 112112 7676 104104 8484
언노치 아이조드 충격강도 (kgf·cm/cm)Unnotched Izod impact strength (kgf cm/cm) 1818 3636 1212 4444 2727 1818
열변형 온도 (℃)Heat Deflection Temperature (℃) 170170 234234 169169 237237 192192 228228
비교예comparative example
77 88 99 1010 1111 1212
(A) (중량부)(A) (parts by weight) 100100 100100 100100 100100 100100 100100
(B) (중량부)(B) (parts by weight) 2525 2525 2525 2525 2525 2525
(C) (중량부)(C) (parts by weight) 1515 1515 1515 1515 1515 1515
(D1) (중량부)(D1) (parts by weight) -- 0.60.6 0.60.6 0.60.6 2.12.1 0.10.1
(D2) (중량부)(D2) (parts by weight) 0.60.6 -- -- -- -- --
(E1) (중량부)(E1) (parts by weight) 0.60.6 0.070.07 66 -- 0.10.1 1.51.5
(E2) (중량부)(E2) (parts by weight) -- -- -- 0.60.6 -- --
중량비 (D:E)Weight ratio (D:E) 1:11:1 1:0.11:0.1 1:101:10 1:11:1 1:0.051:0.05 1:151:15
(초기) 반사율(%)(initial) reflectance (%) 95.395.3 95.595.5 95.995.9 95.995.9 94.594.5 95.695.6
반사율 유지율(%)Reflectance Retention (%) 98.598.5 98.898.8 99.599.5 98.798.7 98.698.6 98.698.6
스파이럴 플로우 길이 (mm)Spiral flow length (mm) 9999 9494 112112 8484 105105 117117
언노치 아이조드 충격강도 (kgf·cm/cm)Unnotched Izod impact strength (kgf cm/cm) 3030 2525 2626 2626 2828 2727
열변형 온도 (℃)Heat Deflection Temperature (℃) 182182 215215 181181 200200 240240 176176
상기 결과로부터, 본 발명에 따른 발광다이오드 리플렉터(열가소성 수지 조성물)는 반사율, 반사율 유지율, 박막 성형성, 내충격성, 내열성 및 이들의 물성 발란스가 우수함을 알 수 있다.From the above results, it can be seen that the light emitting diode reflector (thermoplastic resin composition) according to the present invention has excellent reflectance, reflectance retention, thin film formability, impact resistance, heat resistance, and balance of physical properties thereof.
반면, 백색 안료를 본 발명의 함량 범위 미만으로 적용할 경우(비교예 1), 발광다이오드 리플렉터의 반사율, 내충격성, 내열성 등이 저하됨을 알 수 있고, 백색 안료를 본 발명의 함량 범위보다 초과하여 적용할 경우(비교예 2), 발광다이오드 리플렉터의 반사율 유지율, 박막 성형성 등이 저하됨을 알 수 있다. 유리 섬유를 본 발명의 함량 범위 미만으로 적용할 경우(비교예 3), 발광다이오드 리플렉터의 내충격성, 내열성 등이 저하됨을 알 수 있고, 유리 섬유를 본 발명의 함량 범위보다 초과하여 적용할 경우(비교예 4), 발광다이오드 리플렉터의 반사율 유지율, 박막 성형성 등이 저하됨을 알 수 있다. 펜타에리스리톨 디포스파이트 화합물을 본 발명의 함량 범위 미만으로 적용할 경우(비교예 5), 발광다이오드 리플렉터의 반사율 유지율이 저하됨을 알 수 있고, 펜타에리스리톨 디포스파이트 화합물을 본 발명의 함량 범위보다 초과하여 적용할 경우(비교예 6), 발광다이오드 리플렉터의 박막 성형성, 내충격성 등이 저하됨을 알 수 있으며, 펜타에리스리톨 디포스파이트 화합물 대신에, 트리페닐포스페이트(D2)를 적용할 경우(비교예 7), 발광다이오드 리플렉터의 반사율 유지율, 내열성 등이 저하됨을 알 수 있다. DOPO를 본 발명의 함량 범위 미만으로 적용할 경우(비교예 8), 발광다이오드 리플렉터의 반사율 유지율이 저하됨을 알 수 있고, DOPO를 본 발명의 함량 범위보다 초과하여 적용할 경우(비교예 9), 발광다이오드 리플렉터의 내열성이 저하됨을 알 수 있으며, DOPO 대신에, DOPO 유도체(E2)를 적용할 경우(비교예 10), 발광다이오드 리플렉터의 박막 성형성 등이 저하됨을 알 수 있다.On the other hand, when the white pigment is applied below the content range of the present invention (Comparative Example 1), it can be seen that the reflectance, impact resistance, heat resistance, etc. of the light emitting diode reflector are lowered, and the white pigment exceeds the content range of the present invention. When applied (Comparative Example 2), it can be seen that the reflectance retention rate and thin film formability of the light emitting diode reflector are deteriorated. When the glass fiber is applied below the content range of the present invention (Comparative Example 3), it can be seen that the impact resistance and heat resistance of the light emitting diode reflector are lowered, and when the glass fiber is applied in excess of the content range of the present invention ( In Comparative Example 4), it can be seen that the reflectance retention rate and thin film formability of the light emitting diode reflector are deteriorated. When the pentaerythritol diphosphite compound is applied below the content range of the present invention (Comparative Example 5), it can be seen that the reflectance retention of the light emitting diode reflector is lowered, and the pentaerythritol diphosphite compound is applied in excess of the content range of the present invention (Comparative Example 6), it can be seen that the thin film formability, impact resistance, etc. of the light emitting diode reflector are lowered, and when triphenyl phosphate (D2) is applied instead of the pentaerythritol diphosphite compound (Comparative Example 7), It can be seen that the reflectance retention rate and heat resistance of the light emitting diode reflector are lowered. When DOPO is applied below the content range of the present invention (Comparative Example 8), it can be seen that the reflectance retention of the light emitting diode reflector is lowered, and when DOPO is applied in excess of the content range of the present invention (Comparative Example 9), It can be seen that the heat resistance of the light emitting diode reflector is lowered, and when the DOPO derivative (E2) is used instead of DOPO (Comparative Example 10), it can be seen that the thin film formability of the light emitting diode reflector is lowered.
또한, 펜타에리스리톨 디포스파이트 화합물 및 DOPO의 함량이 본 발명의 범위에 포함되더라도, 펜타에리스리톨 디포스파이트 화합물 및 DOPO의 중량비(D1:E1)가 1 : 0.2 미만(1 : 0.05)일 경우(비교예 11), 발광다이오드 리플렉터의 반사율 유지율 등이 저하됨을 알 수 있고, 1 : 5를 초과(1 : 15)할 경우(비교예 12), 발광다이오드 리플렉터의 반사율 유지율, 내열성 등이 저하됨을 알 수 있다.In addition, even if the contents of the pentaerythritol diphosphite compound and DOPO are within the scope of the present invention, the weight ratio (D1:E1) of the pentaerythritol diphosphite compound and DOPO is less than 1: 0.2 (1: 0.05) (Comparative Example 11) ), it can be seen that the reflectance retention rate of the light emitting diode reflector is lowered, and when it exceeds 1: 5 (1: 15) (Comparative Example 12), it can be seen that the reflectance retention rate, heat resistance, etc. of the light emitting diode reflector are lowered.
이제까지 본 발명에 대하여 실시예들을 중심으로 살펴보았다. 본 발명이 속하는 기술분야에서 통상의 지식을 가진 자는 본 발명이 본 발명의 본질적인 특성에서 벗어나지 않는 범위에서 변형된 형태로 구현될 수 있음을 이해할 수 있을 것이다. 그러므로, 개시된 실시예들은 한정적인 관점이 아니라 설명적인 관점에서 고려되어야 한다. 본 발명의 범위는 전술한 설명이 아니라 특허청구범위에 나타나 있으며, 그와 동등한 범위 내에 있는 모든 차이점은 본 발명에 포함된 것으로 해석되어야 할 것이다.Up to now, the present invention has been mainly examined in the examples. Those of ordinary skill in the art to which the present invention pertains will understand that the present invention can be implemented in modified forms without departing from the essential characteristics of the present invention. Therefore, the disclosed embodiments are to be considered in an illustrative rather than a restrictive sense. The scope of the present invention is indicated in the claims rather than the foregoing description, and all differences within the scope equivalent thereto should be construed as being included in the present invention.

Claims (10)

  1. 하기 화학식 1로 표시되는 반복단위를 포함하는 폴리에스테르 수지 약 100 중량부;About 100 parts by weight of a polyester resin including a repeating unit represented by the following Chemical Formula 1;
    백색 안료 약 5 내지 약 40 중량부;about 5 to about 40 parts by weight of a white pigment;
    유리 섬유 약 5 내지 약 30 중량부;about 5 to about 30 parts by weight of glass fiber;
    하기 화학식 2로 표시되는 펜타에리스리톨 디포스파이트 화합물 약 0.1 내지 약 3 중량부; 및About 0.1 to about 3 parts by weight of a pentaerythritol diphosphite compound represented by the following Chemical Formula 2; and
    DOPO(9,10-디하이드로-9-옥사-10-포스파펜안트렌-10-옥시드) 약 0.1 내지 약 3 중량부;를 포함하는 열가소성 수지 조성물로부터 형성되며,It is formed from a thermoplastic resin composition comprising; about 0.1 to about 3 parts by weight of DOPO (9,10-dihydro-9-oxa-10-phosphaphenanthrene-10-oxide),
    상기 펜타에리스리톨 디포스파이트 화합물 및 상기 DOPO의 중량비(펜타에리스리톨 디포스파이트 화합물:DOPO)가 약 1 : 0.2 내지 약 1 : 5인 것을 특징으로 하는 발광다이오드 리플렉터:A light emitting diode reflector, characterized in that the weight ratio of the pentaerythritol diphosphite compound and the DOPO (pentaerythritol diphosphite compound:DOPO) is from about 1:0.2 to about 1:5:
    [화학식 1][Formula 1]
    Figure PCTKR2021017063-appb-I000007
    Figure PCTKR2021017063-appb-I000007
    상기 화학식 1에서, Ar은 탄소수 6 내지 18의 아릴렌기이고, R1 및 R3는 각각 독립적으로 탄소수 1 내지 10의 선형 알킬렌기이고, R2는 탄소수 5 내지 12의 환형 알킬렌기이다;In Formula 1, Ar is an arylene group having 6 to 18 carbon atoms, R 1 and R 3 are each independently a linear alkylene group having 1 to 10 carbon atoms, and R 2 is a cyclic alkylene group having 5 to 12 carbon atoms;
    [화학식 2][Formula 2]
    Figure PCTKR2021017063-appb-I000008
    Figure PCTKR2021017063-appb-I000008
    상기 화학식 2에서, R4 및 R5는 각각 독립적으로 치환 또는 비치환된 탄소수 1 내지 10의 알킬기 또는 치환 또는 비치환된 탄소수 6 내지 20의 아릴기이다.In Formula 2, R 4 and R 5 are each independently a substituted or unsubstituted C 1 to C 10 alkyl group or a substituted or unsubstituted C 6 to C 20 aryl group.
  2. 제1항에 있어서, 상기 폴리에스테르 수지는 하기 화학식 1a로 표시되는 반복단위를 포함하는 것을 특징으로 하는 발광다이오드 리플렉터.The light emitting diode reflector according to claim 1, wherein the polyester resin comprises a repeating unit represented by the following Chemical Formula 1a.
    [화학식 1a][Formula 1a]
    Figure PCTKR2021017063-appb-I000009
    Figure PCTKR2021017063-appb-I000009
  3. 제1항 또는 제2항에 있어서, 상기 백색 안료는 산화티탄, 산화아연, 황화아연, 황산아연, 황산바륨, 탄산칼슘 및 알루미나 중 1종 이상을 포함하는 것을 특징으로 하는 발광다이오드 리플렉터.The light emitting diode reflector according to claim 1 or 2, wherein the white pigment comprises at least one of titanium oxide, zinc oxide, zinc sulfide, zinc sulfate, barium sulfate, calcium carbonate, and alumina.
  4. 제1항 내지 제3항 중 어느 한 항에 있어서, 상기 백색 안료 및 상기 펜타에리스리톨 디포스파이트 화합물의 중량비(백색 안료: 펜타에리스리톨 디포스파이트 화합물)는 약 15 : 1 내지 약 150 : 1인 것을 특징으로 하는 발광다이오드 리플렉터.4. The method according to any one of claims 1 to 3, characterized in that the weight ratio of the white pigment and the pentaerythritol diphosphite compound (white pigment: pentaerythritol diphosphite compound) is from about 15:1 to about 150:1. light emitting diode reflector.
  5. 제1항 내지 제4항 중 어느 한 항에 있어서, 상기 발광다이오드 리플렉터는 ASTM E1331에 의거하여 측정한 90 mm × 50 mm × 2.5 mm 크기 시편의 450 nm 파장 광에 대한 반사율이 약 92 내지 약 99%인 것을 특징으로 하는 발광다이오드 리플렉터.The light emitting diode reflector according to any one of claims 1 to 4, wherein the light emitting diode reflector has a reflectance of about 92 to about 99 with respect to a 450 nm wavelength light of a 90 mm × 50 mm × 2.5 mm specimen measured according to ASTM E1331. Light-emitting diode reflector, characterized in that %.
  6. 제1항 내지 제5항 중 어느 한 항에 있어서, 상기 발광다이오드 리플렉터는 하기 식 1에 따라 산출한 반사율 유지율이 약 99% 이상인 것을 특징으로 하는 발광다이오드 리플렉터:[Claim 6] The light emitting diode reflector according to any one of claims 1 to 5, wherein the light emitting diode reflector has a reflectance retention calculated according to Equation 1 below about 99%:
    [식 1][Equation 1]
    반사율 유지율(%) = 100 - {[(Rf0 - Rf1) / Rf0] × 100}Reflectance Retention (%) = 100 - {[(Rf 0 - Rf 1 ) / Rf 0 ] × 100}
    상기 식 1에서, Rf0는 ASTM E1331에 의거하여 측정한 90 mm × 50 mm × 2.5 mm 크기 시편의 450 nm 파장 광에 대한 초기 반사율이고, Rf1은 상기 시편을 105℃ 조건에서, 500 시간 방치 후, ASTM E1331에 의거하여 측정한 450 nm 파장 광에 대한 반사율이다.In Equation 1, Rf 0 is the initial reflectance with respect to 450 nm wavelength light of a 90 mm × 50 mm × 2.5 mm size specimen measured according to ASTM E1331, and Rf 1 is the specimen at 105° C., left for 500 hours. Then, it is the reflectance with respect to 450 nm wavelength light measured according to ASTM E1331.
  7. 제1항 내지 제6항 중 어느 한 항에 있어서, 상기 열가소성 수지 조성물은 성형 온도 300℃, 금형 온도 60℃, 사출압 100 MPa 및 사출속도 100 mm/s의 조건에서 너비 15 mm, 두께 0.5 mm인 스파이럴(spiral) 형태의 금형에서 사출 성형 후 측정한 시편의 스파이럴 플로우(spiral flow) 길이가 약 85 내지 약 150 mm인 것을 특징으로 하는 발광다이오드 리플렉터.The method according to any one of claims 1 to 6, wherein the thermoplastic resin composition has a width of 15 mm and a thickness of 0.5 mm under the conditions of a molding temperature of 300°C, a mold temperature of 60°C, an injection pressure of 100 MPa, and an injection speed of 100 mm/s. A light emitting diode reflector, characterized in that the length of the spiral flow of the specimen measured after injection molding in an in-spiral mold is about 85 to about 150 mm.
  8. 제1항 내지 제7항 중 어느 한 항에 있어서, 상기 발광다이오드 리플렉터는 ASTM D4812에 의거하여 측정한 두께 1/8" 시편의 언노치 아이조드 충격강도가 약 20 내지 약 40 kgf·cm/cm인 것을 특징으로 하는 발광다이오드 리플렉터.The method according to any one of claims 1 to 7, wherein the light emitting diode reflector has an unnotched Izod impact strength of about 20 to about 40 kgf·cm/cm of a 1/8″ thick specimen measured according to ASTM D4812. Light emitting diode reflector, characterized in that.
  9. 제1항 내지 제8항 중 어느 한 항에 있어서, 상기 발광다이오드 리플렉터는 ASTM D648에 의거하여, 응력 1.82 MPa, 승온 속도 120℃/hr의 조건에서 측정한 열변형 온도(HDT)가 약 190 내지 약 270℃인 것을 특징으로 하는 발광다이오드 리플렉터.The method according to any one of claims 1 to 8, wherein the light emitting diode reflector has a heat deflection temperature (HDT) of about 190 to about 190 according to ASTM D648, measured under the conditions of a stress of 1.82 MPa and a temperature increase rate of 120°C/hr Light emitting diode reflector, characterized in that about 270 ℃.
  10. 제1항 내지 제9항 중 어느 한 항에 따른 발광다이오드 리플렉터를 포함하는 반도체 장치.A semiconductor device comprising the light emitting diode reflector according to any one of claims 1 to 9.
PCT/KR2021/017063 2020-12-29 2021-11-19 Light-emitting diode reflector WO2022145730A1 (en)

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Citations (5)

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Publication number Priority date Publication date Assignee Title
KR20100087851A (en) * 2009-01-29 2010-08-06 삼성전자주식회사 Light-emitting unit, method of manufacturing the same, and light source device having the light-emitting unit
US20120289625A1 (en) * 2010-01-18 2012-11-15 Teijin Limited Polylactic acid composition
US20140299907A1 (en) * 2011-12-30 2014-10-09 Ticona Llc Reflector for Light-Emitting Devices
KR20160066221A (en) * 2014-12-02 2016-06-10 동우 화인켐 주식회사 Self emission type photosensitive resin composition, color filter manufactured using thereof and image display device having the same
JP2017031270A (en) * 2015-07-30 2017-02-09 新日本理化株式会社 Epoxy resin composition and epoxy cured product

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20100087851A (en) * 2009-01-29 2010-08-06 삼성전자주식회사 Light-emitting unit, method of manufacturing the same, and light source device having the light-emitting unit
US20120289625A1 (en) * 2010-01-18 2012-11-15 Teijin Limited Polylactic acid composition
US20140299907A1 (en) * 2011-12-30 2014-10-09 Ticona Llc Reflector for Light-Emitting Devices
KR20160066221A (en) * 2014-12-02 2016-06-10 동우 화인켐 주식회사 Self emission type photosensitive resin composition, color filter manufactured using thereof and image display device having the same
JP2017031270A (en) * 2015-07-30 2017-02-09 新日本理化株式会社 Epoxy resin composition and epoxy cured product

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