WO2022145090A1 - Ceramic assembly and electrostatic chuck device - Google Patents
Ceramic assembly and electrostatic chuck device Download PDFInfo
- Publication number
- WO2022145090A1 WO2022145090A1 PCT/JP2021/031890 JP2021031890W WO2022145090A1 WO 2022145090 A1 WO2022145090 A1 WO 2022145090A1 JP 2021031890 W JP2021031890 W JP 2021031890W WO 2022145090 A1 WO2022145090 A1 WO 2022145090A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- ceramic
- electrode layer
- electrostatic chuck
- ceramic plate
- plate
- Prior art date
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- 239000000919 ceramic Substances 0.000 title claims abstract description 275
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- 239000010410 layer Substances 0.000 claims description 239
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- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- -1 Al N Inorganic materials 0.000 claims description 7
- 229910052750 molybdenum Inorganic materials 0.000 claims description 7
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- 229910004298 SiO 2 Inorganic materials 0.000 claims description 4
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 1
- 238000000576 coating method Methods 0.000 description 32
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- 238000000034 method Methods 0.000 description 25
- 238000001179 sorption measurement Methods 0.000 description 24
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- 239000000126 substance Substances 0.000 description 6
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 5
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- QIJNJJZPYXGIQM-UHFFFAOYSA-N 1lambda4,2lambda4-dimolybdacyclopropa-1,2,3-triene Chemical compound [Mo]=C=[Mo] QIJNJJZPYXGIQM-UHFFFAOYSA-N 0.000 description 2
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- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 2
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- 229910052802 copper Inorganic materials 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
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- JAGQSESDQXCFCH-UHFFFAOYSA-N methane;molybdenum Chemical compound C.[Mo].[Mo] JAGQSESDQXCFCH-UHFFFAOYSA-N 0.000 description 1
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- 229910052757 nitrogen Inorganic materials 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
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- 239000010703 silicon Substances 0.000 description 1
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
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- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 1
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
- C04B37/003—Joining burned ceramic articles with other burned ceramic articles or other articles by heating by means of an interlayer consisting of a combination of materials selected from glass, or ceramic material with metals, metal oxides or metal salts
- C04B37/005—Joining burned ceramic articles with other burned ceramic articles or other articles by heating by means of an interlayer consisting of a combination of materials selected from glass, or ceramic material with metals, metal oxides or metal salts consisting of glass or ceramic material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32568—Relative arrangement or disposition of electrodes; moving means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
- C04B2237/04—Ceramic interlayers
- C04B2237/06—Oxidic interlayers
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
- C04B2237/32—Ceramic
- C04B2237/34—Oxidic
- C04B2237/343—Alumina or aluminates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
Definitions
- the present invention relates to a ceramic joint and an electrostatic chuck device.
- a plate-shaped sample such as a silicon wafer is fixed to a predetermined electrostatic chuck member having an electrostatic chuck function by electrostatic adsorption. Processing is applied.
- the surface of the plate-shaped sample becomes hot due to the heat of the plasma, and the resist film on the surface is torn (burst).
- an electrostatic chuck device having a cooling function is used.
- Such an electrostatic chuck device includes the above-mentioned electrostatic chuck member and a temperature control base member in which a flow path for circulating a cooling medium for temperature control is formed inside the metal member.
- the electrostatic chuck member and the temperature control base member are joined and integrated on the lower surface of the electrostatic chuck member via a silicone-based adhesive.
- a cooling medium for temperature adjustment is circulated in the flow path of the temperature adjustment base member to exchange heat, and the temperature of the plate-shaped sample fixed to the upper surface of the electrostatic chuck member is desirable and constant. Electrostatic adsorption is possible while maintaining the temperature. Therefore, by using the electrostatic chuck device, it is possible to perform various plasma treatments on the plate-shaped sample while maintaining the temperature of the plate-shaped sample that is electrostatically adsorbed.
- the electrostatic chuck member As the electrostatic chuck member, a configuration including a ceramic bonding body including a pair of ceramic plates and an electrode layer interposed between them is known.
- a method for manufacturing such a ceramic joint for example, a groove is dug in one of the ceramic sintered bodies, a conductive layer is formed in the groove, and the conductive layer is ground and mirror-polished together with the ceramic sintered body. Later, a method of joining one ceramic sintered body to the other ceramic sintered body by hot pressing is known (see, for example, Patent Document 1).
- a minute space may remain at the interface (joining interface) where a pair of ceramic plates are bonded together, and this mechanism reduces the withstand voltage of the electrostatic chuck member, that is, dielectric breakdown.
- the fear has been pointed out.
- the electrostatic chuck member having such a void when a high voltage is applied to the dielectric layer (ceramic plate), it is expected that the electric charge accumulates in the void and the ceramic plate undergoes dielectric breakdown rather than being discharged.
- Patent Document 1 could not sufficiently suppress the formation of voids between the electrode layer and the ceramic plate. Therefore, the ceramic joint described in Patent Document 1 cannot sufficiently prevent the dielectric breakdown of the ceramic plate due to electric discharge, and improvement is required.
- the present invention has been made in view of the above circumstances, and is an electrostatic chuck including a ceramic joint and a ceramic joint that suppresses dielectric breakdown of a ceramic plate due to electric discharge when a high voltage is applied.
- the purpose is to provide the device.
- the present invention includes the following aspects.
- a pair of ceramic plates, an electrode layer interposed between the pair of ceramic plates, and an insulating layer arranged around the electrode layer between the pair of ceramic plates are provided, and the insulating layer is insulated.
- a ceramic joint composed of a sex material and a conductive material.
- the insulating material is at least one selected from the group consisting of Al 2 O 3 , Al N, Si 3 N 4 , Y 2 O 3 , YAG, SmAlO 3 , MgO and SiO 2. [1] ] Or [2].
- the conductive material is at least one selected from the group consisting of SiC, TiO 2 , TiN, TiC, W, WC, Mo, Mo 2 C and C, according to [1] to [3].
- the ceramic joint according to any one of the items.
- An electrostatic chuck device in which an electrostatic chuck member made of ceramics and a temperature control base member made of metal are joined via an adhesive layer, and the electrostatic chuck member is [1]. ] To [7], the electrostatic chuck device comprising the ceramic joint according to any one of the items.
- a ceramic joint and an electrostatic chuck device including a ceramic joint that suppresses dielectric breakdown of a ceramic plate due to electric discharge when a high voltage is applied.
- the ceramic joint according to the embodiment of the present invention will be described with reference to FIG. 1.
- the left-right direction of the paper surface is the X direction
- the vertical direction of the paper is the Y direction.
- the dimensions and ratios of each component are appropriately different in order to make the drawings easier to see.
- FIG. 1 is a cross-sectional view showing the ceramic joint of the present embodiment.
- the ceramic joint 1 of the present embodiment includes a pair of ceramic plates 2 and 3 and an electrode layer 4 and an insulating layer 5 interposed between the pair of ceramic plates 2 and 3.
- the cross-sectional view shown in FIG. 1 is a cross-sectional view obtained by cutting the ceramic joint by a virtual surface including the center of the circle, assuming the smallest circle among the circles circumscribing the ceramic joint 1 in a plan view.
- the ceramic joint 1 is substantially circular in plan view, the center of the circle and the center of the shape of the ceramic joint in plan view are approximately the same.
- the "planar view” refers to a field of view seen from the Y direction, which is the thickness direction of the ceramic joint. Further, in the present specification, the “outer edge” refers to a region near the outer circumference when the object is viewed in a plan view.
- the ceramic plate 2 may be referred to as a first ceramic plate 2
- the ceramic plate 3 may be referred to as a second ceramic plate 3.
- the ceramic joint 1 is a joint in which the first ceramic plate 2 and the second ceramic plate 3 are joined and integrated via the electrode layer 4 and the insulating layer 5.
- the electrode layer 4 and the insulating layer 5 are a joint surface 2a facing the second ceramic plate 3 in the first ceramic plate 2 and a joint surface facing the first ceramic plate 2 in the second ceramic plate 3. It is provided in contact with 3a.
- the insulating layer 5 is composed of an insulating material and a conductive material.
- the first ceramic plate 2 and the second ceramic plate 3 have the same outer peripheral shape of the overlapping surface.
- the thicknesses of the first ceramic plate 2 and the second ceramic plate 3 are not particularly limited, and are appropriately adjusted according to the use of the ceramic joint 1.
- the first ceramic plate 2 and the second ceramic plate 3 have the same composition or the same main component.
- the first ceramic plate 2 and the second ceramic plate 3 are made of a composite of an insulating material and a conductive material.
- the insulating material contained in the first ceramic plate 2 and the second ceramic plate 3 is not particularly limited, and is, for example, aluminum oxide (Al 2 O 3 ), aluminum nitride (Al N), yttrium oxide (Y 2 O 3 ). ), Yttrium aluminum garnet (YAG) and the like. Of these, Al 2 O 3 and Al N are preferable.
- the conductive material contained in the first ceramic plate 2 and the second ceramic plate 3 is not particularly limited, and for example, silicon carbide (SiC), titanium oxide (TIO 2 ), titanium nitride (TiN), titanium carbide (Titanium carbide) ( TiC), carbon materials, rare earth oxides, rare earth fluorides and the like can be mentioned.
- silicon carbide SiC
- TiO 2 titanium oxide
- TiN titanium nitride
- TiC titanium carbide
- carbon materials rare earth oxides, rare earth fluorides and the like
- the carbon material include carbon nanotubes (CNTs) and carbon nanofibers. Of these, SiC is preferable.
- the materials of the first ceramic plate 2 and the second ceramic plate 3 have a volume resistivity of 10 13 ⁇ ⁇ cm or more and 10 17 ⁇ ⁇ cm or less, have mechanical strength, and are corrosive gas.
- the material is not particularly limited as long as it is a material having durability against the plasma. Examples of such a material include an Al2O3 sintered body, an AlN sintered body , an Al2O3 - SiC composite sintered body and the like. From the viewpoint of dielectric properties at high temperature, high corrosion resistance, plasma resistance, and heat resistance, the material of the first ceramic plate 2 and the second ceramic plate 3 is preferably an Al2O3 -SiC composite sintered body.
- the average primary particle diameter of the insulating material constituting the first ceramic plate 2 and the second ceramic plate 3 is preferably 0.5 ⁇ m or more and 3.0 ⁇ m or less, and more preferably 0.7 ⁇ m or more and 2.0 ⁇ m or less. More preferably, it is 0.0 ⁇ m or more and 2.0 ⁇ m or less.
- the average primary particle diameter of the insulating material constituting the first ceramic plate 2 and the second ceramic plate 3 is 0.5 ⁇ m or more and 3.0 ⁇ m or less, it is dense, has high withstand voltage resistance, and has high durability.
- the ceramic plate 2 of 1 and the second ceramic plate 3 are obtained.
- the method for measuring the average primary particle diameter of the insulating material constituting the first ceramic plate 2 and the second ceramic plate 3 is as follows.
- the first ceramic plate 2 and the second ceramic plate 3 were magnified 10,000 times with an electrolytic emission scanning electron microscope (FE-SEM. JSM-7800F-Prime manufactured by JEOL Ltd.) manufactured by JEOL Ltd. Observe the cut surface in the thickness direction, and use the intercept method to take the average of the particle sizes of 200 insulating materials as the average primary particle size.
- the electrode layer 4 is an electrode for plasma generation for energizing high-frequency power to generate plasma and processing plasma, an electrode for electrostatic chuck for generating electric charge and fixing a plate-shaped sample by electrostatic adsorption force, and an electrode for electrostatic chuck. It is configured to be used as a heater electrode or the like for heating a plate-shaped sample by generating heat by energization.
- the shape (shape when the electrode layer 4 is viewed in a plan view) and the size (thickness and area when the electrode layer 4 is viewed in a plan view) of the electrode layer 4 are not particularly limited, and are used for the ceramic bonded body 1. It will be adjusted accordingly.
- the electrode layer 4 is composed of a sintered body of particles of a conductive material or a composite (sintered body) of particles of insulating ceramics and particles of a conductive material.
- the electrode layer 4 is a thin electrode having a large spread in the direction orthogonal to the thickness direction rather than the thickness direction.
- the electrode layer 4 has a disk shape with a thickness of 20 ⁇ m and a diameter of 29 cm.
- Such an electrode layer 4 is formed by applying and sintering an electrode layer forming paste, as will be described later.
- the paste for forming the electrode layer shrinks by volume due to sintering, it tends to shrink isotropically, so that the amount of shrinkage is relatively larger in the direction orthogonal to the thickness direction than in the thickness direction. Therefore, voids are structurally likely to occur at the outer edge of the electrode layer 4, that is, at the interface between the electrode layer 4 and the insulating layer 5.
- void refers to a space generated at the interface between the first ceramic plate and the electrode layer or the interface between the second ceramic plate and the electrode layer, and has a major axis of less than 50 ⁇ m. means.
- the volume resistivity value of these mixed materials is preferably about 10-6 ⁇ ⁇ cm or more and 10-2 ⁇ ⁇ cm or less.
- the content of the conductive material in the electrode layer 4 is preferably 15% by mass or more and 100% by mass or less, and 20% by mass or more and 100%. More preferably, it is by mass or less.
- the content of the conductive material is at least the above lower limit value, sufficient dielectric properties can be exhibited in the ceramic plate 3.
- the conductive material contained in the electrode layer 4 may be a conductive ceramic or a conductive material such as a metal or a carbon material.
- the conductive materials contained in the electrode layer 4 are SiC, TiO 2 , TiN, TiC, tungsten (W), tungsten carbide (WC), molybdenum (Mo), molybdenum carbide (Mo 2C ), tantalum (Ta), and carbonization. At least one selected from the group consisting of tantalum (TaC, Ta 4C 5 ), carbon material and a conductive composite sintered body is preferred.
- Examples of carbon materials include carbon black, carbon nanotubes, carbon nanofibers, and the like.
- Examples of the conductive composite sintered body include Al 2 O 3 -Ta 4 C 5 , Al 2 O 3 -W, Al 2 O 3 -SiC, AlN-W, AlN-Ta and the like.
- the conductivity of the electrode layer can be ensured.
- the insulating ceramics contained in the electrode layer 4 are not particularly limited, and are, for example, Al 2 O 3 , Al N, silicon nitride (Si 3 N 4 ), Y 2 O 3 , YAG, and sumalium-aluminum oxide (SmAlO 3 ). , At least one selected from the group consisting of magnesium oxide (MgO) and silicon oxide (SiO 2 ) is preferable.
- the electrode layer 4 is made of a conductive material and an insulating material, the bonding strength between the first ceramic plate 2 and the second ceramic plate 3 and the mechanical strength as an electrode are increased.
- the insulating material contained in the electrode layer 4 is Al 2 O 3 , the dielectric property at high temperature, high corrosion resistance, plasma resistance, and heat resistance are maintained.
- the ratio (blending ratio) of the contents of the conductive material and the insulating material in the electrode layer 4 is not particularly limited, and is appropriately adjusted according to the use of the ceramic joint 1.
- the entire electrode layer 4 may have the same relative density. Further, the electrode layer 4 may have a lower density at the outer edge than the center of the electrode layer 4. The density (relative density) of the electrode layer 4 is determined based on a micrograph taken of the cross section of the ceramic joint 1.
- a microscope for example, a digital microscope (VFX-900F) manufactured by KEYENCE Corporation
- VFX-900F digital microscope
- the imaging range is from the X-direction end of the electrode layer 4 (for example, the + X-direction end) to the X-direction inner direction (for example, -X-direction) of the electrode layer 4.
- the electrode layer 4 included in this range is hereinafter referred to as a “density measurement region”.
- the region where the conductive ceramics and the insulating ceramics constituting the electrode layer 4 exist (the region where the substance exists. Region 1) and the conductive ceramics. It is distinguishable from the region of "pores" (region 2) in which none of the insulating ceramics is present.
- the relative density of the outer edge of the electrode layer 4 is a value obtained by expressing the area in the outer contour of the density measurement region, that is, the ratio of the area of the region 1 to the total area of the region 1 and the region 2 as a percentage. When there are no pores in the electrode layer 4, the relative density in the density measurement region is 100%.
- the imaging range is the region (center) including the center of the electrode layer 4 in the X direction. If it can be reasonably determined from the micrograph that the density is similar to that of the center of the electrode layer 4, the imaging range may not strictly include the center of the electrode layer 4.
- the electrode layer 4 included in the range of 150 ⁇ m in the X direction is defined as the “density measurement region”, and the density of the outer edge of the electrode layer 4 is calculated in the same manner as in the case of measuring the density of the electrode layer 4. The relative density of the center is calculated.
- the relative density of the outer edge of the electrode layer 4 is preferably 50% or more, more preferably 55% or more.
- the relative density of the outer edge of the electrode layer 4 is less than 50%, resistance heat generation is likely to occur as compared with the case of high density, and the in-plane temperature uniformity when high frequency power is applied is likely to decrease.
- the ceramic joint in which the relative density of the outer edge of the electrode layer 4 is 50% or more maintains the in-plane temperature uniformity when high frequency power is applied.
- the region where the relative density of the electrode layer 4 is 100% includes the center in the X direction and is 95% or more with respect to the total width, and the region where the relative density of the electrode layer 4 is lower than the center is. , 2.5% from both ends in the X direction, totaling 5% or less.
- the insulating layer 5 is configured to join the boundary portion between the first ceramic plate 2 and the second ceramic plate 3, that is, the outer edge region other than the electrode layer 4 forming portion.
- the insulating layer 5 is arranged around the electrode layer 4 in a plan view between the first ceramic plate 2 and the second ceramic plate 3 (between the pair of ceramic plates).
- the shape of the insulating layer 5 (the shape when the insulating layer 5 is viewed in a plan view) is not particularly limited, and is appropriately adjusted according to the shape of the electrode layer 4.
- the thickness of the insulating layer 5 (width in the Y direction) is equal to the thickness of the electrode layer 4.
- the insulating layer 5 is made of a composite material composed of an insulating material and a conductive material.
- the volume resistivity value of the insulating layer 5 is 10 13 ⁇ ⁇ cm or more and 10 17 ⁇ ⁇ cm or less.
- the insulating material constituting the insulating layer 5 is not particularly limited, but is preferably the same as the main components of the first ceramic plate 2 and the second ceramic plate 3.
- the insulating material constituting the insulating layer 5 is, for example, at least one selected from the group consisting of Al 2 O 3 , Al N, Si 3 N 4 , Y 2 O 3 , YAG, SmAlO 3 , MgO and SiO 2 . It is preferable to have.
- Al 2 O 3 is preferable as the insulating material constituting the insulating layer 5. Since the insulating material constituting the insulating layer 5 is Al 2 O 3 , the dielectric property at high temperature, high corrosion resistance, plasma resistance, and heat resistance are maintained.
- the conductive material constituting the insulating layer 5 is not particularly limited, but is preferably the same as the main components of the first ceramic plate 2 and the second ceramic plate 3.
- the conductive material constituting the insulating layer 5 is preferably at least one selected from the group consisting of, for example, SiC, TiO 2 , TiN, TiC, W, WC, Mo, Mo 2 C and a carbon material.
- Examples of the carbon material include carbon nanotubes and carbon nanofibers.
- SiC is preferable as the conductive material constituting the insulating layer 5.
- the content of the insulating material is preferably 80% by mass or more and 96% by mass or less, more preferably 80% by mass or more and 95% by mass or less, and further preferably 85% by mass or more and 95% by mass or less.
- the content of the insulating material is at least the above lower limit value, sufficient withstand voltage resistance can be obtained.
- the content of the insulating material is not more than the above upper limit value, the static elimination effect of the conductive material contained in the insulating layer 5 can be sufficiently exhibited.
- the content of the conductive material is preferably 4% by mass or more and 20% by mass or less, more preferably 5% by mass or more and 20% by mass or less, and further preferably 5% by mass or more and 15% by mass or less.
- the content of the conductive material is at least the above lower limit value, the static elimination effect of the conductive material can be sufficiently exhibited.
- the content of the conductive material is not more than the above upper limit value, a sufficient withstand voltage can be obtained.
- the average primary particle size of the insulating material constituting the insulating layer 5 is preferably 0.5 ⁇ m or more and 3.0 ⁇ m or less, and more preferably 0.7 ⁇ m or more and 2.0 ⁇ m or less.
- the average primary particle diameter of the insulating material constituting the insulating layer 5 is 0.5 ⁇ m or more, sufficient withstand voltage resistance can be obtained. On the other hand, when the average primary particle diameter of the insulating material constituting the insulating layer 5 is 3.0 ⁇ m or less, processing such as grinding is easy.
- the average primary particle size of the conductive material constituting the insulating layer 5 is preferably 0.1 ⁇ m or more and 1.0 ⁇ m or less, and more preferably 0.1 ⁇ m or more and 0.8 ⁇ m or less.
- the average primary particle diameter of the conductive material constituting the insulating layer 5 is 0.1 ⁇ m or more, sufficient withstand voltage resistance can be obtained.
- the average primary particle diameter of the conductive material constituting the insulating layer 5 is 1.0 ⁇ m or less, processing such as grinding is easy.
- the method of measuring the average primary particle diameter of the insulating material constituting the insulating layer 5 and the average primary particle diameter of the conductive material is as follows: the average primary of the insulating material constituting the first ceramic plate 2 and the second ceramic plate 3.
- the method for measuring the particle size and the average primary particle size of the conductive material is the same.
- the electric charge charged on the ceramic joint 1 can be eliminated from the ceramic plates 2 and 3 composed of the insulating material and the conductive material. Further, as described above, in the ceramics bonded body 1, voids are likely to be formed on the outer edge of the electrode layer, and the formed voids are likely to be charged. However, since the insulating layer 5 is composed of an insulating material and a conductive material, when a high voltage is applied to the ceramic joint 1, the electric charge charged at the bonding interface between the electrode layer 4 and the insulating layer 5 is applied to the insulating layer 5. Can be statically eliminated. As a result, the charging of the bonding interface between the electrode layer 4 and the insulating layer 5 can be suppressed, and the dielectric breakdown of the ceramic bonding body 1 due to the electric discharge can be suppressed.
- FIGS. 2 and 3 a modified example as shown in FIGS. 2 and 3 may be adopted.
- the same parts as the components in the above embodiment are designated by the same reference numerals, the description thereof will be omitted, and only the different points will be described.
- the insulating layer 5 is integrally formed with the second ceramic plate 3.
- integrally formed means that it is formed as one member (it is one member). In this sense, the second ceramic plate 3 and the insulating layer 5 of this modification are different from the configuration in which the two members are originally "integrated” into one.
- the insulating layer 5 is made of the same material as the second ceramic plate 3.
- the second ceramic plate 3 has a recess 3A, and an insulating layer 5 is provided in an annular shape around the recess 3A. A part of the second ceramic plate 3 corresponds to the insulating layer 5.
- the recess 3A can be formed by grinding or polishing a ceramic plate having no recess.
- the electric charge charged at the joint interface between the electrode layer 4 and the insulating layer 5 can be eliminated not only in the ceramic plate 2 and the ceramic plate 3 but also in the insulating layer 5.
- the charging of the bonding interface between the electrode layer 4 and the insulating layer 5 can be suppressed, and the dielectric breakdown of the ceramic bonding body 10 due to the electric discharge can be suppressed.
- the insulating layer 5 is integrally formed with the first ceramic plate 2.
- the insulating layer 5 is made of the same material as the first ceramic plate 2.
- the first ceramic plate 2 has a recess 2A, and an insulating layer 5 is provided in an annular shape around the recess 2A. A part of the first ceramic plate 2 corresponds to the insulating layer 5.
- the recess 2A can be formed by grinding or polishing a ceramic plate having no recess.
- the inner surface of the recess 2A may be parallel to the Y direction or may have an inclination with respect to the Y direction. When the inner surface has an inclination with respect to the Y direction, the opening diameter of the recess 2A gradually decreases in the depth direction of the recess 2A.
- the electric charge charged at the joint interface between the electrode layer 4 and the insulating layer 5 can be eliminated not only in the ceramic plate 2 and the ceramic plate 3 but also in the insulating layer 5.
- the charging of the bonding interface between the electrode layer 4 and the insulating layer 5 can be suppressed, and the dielectric breakdown of the ceramic bonding body 20 due to the electric discharge can be suppressed.
- an electrode layer forming paste is applied to one surface of a first ceramic plate to form an electrode layer coating film, and an insulating layer forming paste is applied to the surface.
- the pair of ceramic plates are in a posture in which the electrode layer coating film and the surface on which the insulating layer coating film is formed are on the inside in a step of forming the insulating layer coating film (hereinafter referred to as "first step"). (Hereinafter referred to as "second step") and the laminate including the pair of ceramic plates, the electrode layer coating film and the insulating layer coating film are added in the thickness direction while being heated. It has a step of pressing (hereinafter, referred to as a "third step").
- a paste for forming an electrode layer is applied to one surface 2a of the first ceramic plate 2 by a coating method such as a screen printing method to form a coating film (electrode layer coating film) to be the electrode layer 4. ) Is formed.
- a coating method such as a screen printing method to form a coating film (electrode layer coating film) to be the electrode layer 4.
- the electrode layer forming paste particles of the conductive material forming the electrode layer 4 or a dispersion liquid in which particles of the conductive material and an insulating material are dispersed in a solvent is used.
- a coating film for forming an insulating layer is applied to one surface 2a of the first ceramic plate 2 that has been polished by a coating method such as a screen printing method to form an insulating layer 5.
- a coating method such as a screen printing method to form an insulating layer 5.
- Insulating layer coating film is formed.
- a dispersion liquid in which the insulating material and the conductive material forming the insulating layer 5 are dispersed in a solvent is used. Isopropyl alcohol or the like is used as the solvent contained in the pace for forming the insulating layer.
- the first ceramic plate 2 is laminated on the joint surface 3a of the second ceramic plate 3 in a posture in which the surface on which the electrode layer coating film and the insulating layer coating film are formed is on the inside.
- the laminate including the first ceramic plate 2, the electrode layer coating film, the insulating layer coating film, and the second ceramic plate 3 is heated and pressed in the thickness direction.
- the atmosphere when the laminate is heated and pressed in the thickness direction is preferably a vacuum or an inert atmosphere such as Ar, He, N 2 .
- the temperature for heating the laminate (heat treatment temperature) is preferably 1400 ° C. or higher and 1900 ° C. or lower, more preferably 1500 ° C. or higher and 1850 ° C. or lower.
- the temperature for heating the laminate is 1400 ° C. or higher and 1900 ° C. or lower, the solvent contained in each coating film is volatilized, and an electrode layer is formed between the first ceramic plate 2 and the second ceramic plate 3. 4 can be formed. Further, the first ceramic plate 2 and the second ceramic plate 3 can be joined and integrated via the electrode layer 4.
- the pressure (pressurizing pressure) for pressurizing the laminate in the thickness direction is preferably 1.0 MPa or more and 50.0 MPa or less, and more preferably 5.0 MPa or more and 20.0 MPa or less.
- the electrode layer 4 and the insulating layer 5 are formed between the first ceramic plate 2 and the second ceramic plate 3. can. Further, the first ceramic plate 2 and the second ceramic plate 3 can be joined and integrated via the electrode layer 4 and the insulating layer 5.
- the method for manufacturing a ceramic joint of the present embodiment it is possible to provide a ceramic joint 1 in which the insulating layer 5 is composed of an insulating material and a conductive material.
- the obtained ceramic joint 1 can suppress discharge at the junction interface between the first ceramic plate 2 and the second ceramic plate 3 and the insulating layer 5, and can suppress dielectric breakdown due to the discharge.
- FIG. 4 is a cross-sectional view showing the electrostatic chuck device of the present embodiment.
- the electrostatic chuck device 100 of the present embodiment includes a disk-shaped electrostatic chuck member 102 and a disk-shaped temperature adjusting base member that adjusts the electrostatic chuck member 102 to a desired temperature. It has a 103 and an adhesive layer 104 for joining and integrating the electrostatic chuck member 102 and the temperature adjusting base member 103.
- the electrostatic chuck member 102 is made of, for example, the ceramic joint 1 of the above-described embodiment.
- the electrostatic chuck member 102 is made of the ceramic joint 1 will be described.
- the mounting surface 111a side of the mounting plate 111 may be described as "upper” and the temperature adjusting base member 103 side may be described as "lower” to represent the relative position of each configuration.
- the electrostatic chuck member 102 has a mounting plate 111 whose upper surface is made of ceramics having a mounting surface 111a on which a plate-shaped sample such as a semiconductor wafer is mounted, and a surface opposite to the mounting surface 111a of the mounting plate 111.
- the support plate 112 provided on the side, the electrostatic adsorption electrode 113 sandwiched between the mounting plate 111 and the support plate 112, and the electrostatic adsorption electrode 113 sandwiched between the mounting plate 111 and the support plate 112 for electrostatic adsorption.
- the mounting plate 111 corresponds to the second ceramic plate 3
- the support plate 112 corresponds to the first ceramic plate 2
- the electrostatic adsorption electrode 113 corresponds to the electrode. It corresponds to the layer 4, and the insulating material 114 corresponds to the above-mentioned insulating layer 5.
- a large number of protrusions for supporting a plate-shaped sample such as a semiconductor wafer are erected on the mounting surface 111a of the mounting plate 111 (not shown). Further, on the peripheral edge of the mounting surface 111a of the mounting plate 111, an annular protrusion having a square cross section is provided so as to go around the peripheral edge so that cooling gas such as helium (He) does not leak. May be good. Further, in the region surrounded by the annular protrusions on the mounting surface 111a, a plurality of protrusions having the same height as the annular protrusions, having a circular cross section and a substantially rectangular vertical cross section are provided. May be.
- the thickness of the mounting plate 111 is preferably 0.3 mm or more and 3.0 mm or less, and more preferably 0.5 mm or more and 1.5 mm or less.
- the withstand voltage resistance is excellent.
- the electrostatic attraction force of the electrostatic chuck member 102 does not decrease, and the plate is mounted on the mounting surface 111a of the mounting plate 111.
- the temperature of the plate-shaped sample being processed can be kept at a preferable constant temperature without deteriorating the thermal conductivity between the shaped sample and the temperature adjusting base member 103.
- the support plate 112 supports the mounting plate 111 and the electrostatic adsorption electrode 113 from below.
- the thickness of the support plate 112 is preferably 0.3 mm or more and 3.0 mm or less, and more preferably 0.5 mm or more and 1.5 mm or less. If the thickness of the support plate 112 is 0.3 mm or more, a sufficient withstand voltage can be secured. On the other hand, if the thickness of the support plate 112 is 3.0 mm or less, the electrostatic attraction force of the electrostatic chuck member 102 does not decrease, and the plate shape is mounted on the mounting surface 111a of the mounting plate 111. The temperature of the plate-shaped sample being processed can be kept at a preferable constant temperature without deteriorating the thermal conductivity between the sample and the temperature adjusting base member 103.
- Electrode for electrostatic adsorption In the electrostatic adsorption electrode 113, by applying a voltage, an electrostatic adsorption force for holding the plate-shaped sample is generated on the mounting surface 111a of the mounting plate 111.
- the thickness of the electrostatic adsorption electrode 113 is preferably 5 ⁇ m or more and 200 ⁇ m or less, and more preferably 10 ⁇ m or more and 100 ⁇ m or less. When the thickness of the electrostatic adsorption electrode 113 is 5 ⁇ m or more, sufficient conductivity can be ensured. On the other hand, if the thickness of the electrostatic adsorption electrode 113 is 200 ⁇ m or less, the thermal conductivity between the plate-shaped sample mounted on the mounting surface 111a of the mounting plate 111 and the temperature adjusting base member 103 is high. The temperature of the plate-shaped sample being processed can be kept at a desired constant temperature without lowering. In addition, plasma permeability can be stably generated without deterioration.
- the insulating material 114 is a member that surrounds the electrostatic adsorption electrode 113 and protects the electrostatic adsorption electrode 113 from corrosive gas and its plasma.
- the mounting plate 111 and the support plate 112 are joined and integrated via the electrostatic adsorption electrode 113 by the insulating material 114.
- the power feeding terminal 116 is a member for applying a voltage to the electrostatic adsorption electrode 113.
- the number, shape, and the like of the power feeding terminals 116 are determined by the form of the electrostatic adsorption electrode 113, that is, whether it is a unipolar type or a bipolar type.
- the material of the power supply terminal 116 is not particularly limited as long as it is a conductive material having excellent heat resistance.
- a material whose coefficient of thermal expansion is close to the coefficient of thermal expansion of the electrostatic adsorption electrode 113 and the support plate 112 is preferable, and for example, a metal material such as Koval alloy and niobium (Nb), and various types. Conductive ceramics are preferably used.
- the conductive adhesive layer 117 is provided in the fixing hole 115 of the temperature adjusting base member 103 and in the through hole 118 of the support plate 112. Further, the conductive adhesive layer 117 is interposed between the electrostatic adsorption electrode 113 and the power supply terminal 116 to electrically connect the electrostatic adsorption electrode 113 and the power supply terminal 116.
- the conductive adhesive constituting the conductive adhesive layer 117 contains a conductive material such as carbon fiber and metal powder and a resin.
- the resin contained in the conductive adhesive is not particularly limited as long as it is a resin that is unlikely to cause cohesive failure due to thermal stress, and for example, a silicone resin, an acrylic resin, an epoxy resin, a phenol resin, a polyurethane resin, an unsaturated polyester resin, or the like. Can be mentioned. Among these, a silicone resin is preferable because it has a high degree of expansion and contraction and is unlikely to coagulate and fracture due to a change in thermal stress.
- the temperature control base member 103 is a thick disk-shaped member made of at least one of metal and ceramics.
- the skeleton of the temperature control base member 103 is configured to also serve as an internal electrode for plasma generation.
- a flow path 121 for circulating a cooling medium such as water, He gas, and N 2 gas is formed.
- the skeleton of the temperature control base member 103 is connected to the external high frequency power supply 122. Further, in the fixing hole 115 of the temperature adjusting base member 103, a power feeding terminal 116 whose outer periphery is surrounded by the insulating material 123 is fixed via the insulating material 123. The power supply terminal 116 is connected to an external DC power supply 124.
- the material constituting the temperature control base member 103 is not particularly limited as long as it is a metal having excellent thermal conductivity, conductivity, and workability, or a composite material containing these metals.
- As the material constituting the temperature control base member 103 for example, aluminum (Al), copper (Cu), stainless steel (SUS), titanium (Ti) and the like are preferably used.
- the surface of the temperature control base member 103 exposed to plasma is anodized or resin-coated with a polyimide resin. Further, it is more preferable that the entire surface of the temperature adjusting base member 103 is subjected to the above-mentioned alumite treatment or resin coating.
- the plasma resistance of the temperature control base member 103 is improved and abnormal discharge is prevented. Therefore, the plasma resistance stability of the temperature adjusting base member 103 is improved, and the occurrence of surface scratches on the temperature adjusting base member 103 can be prevented.
- the adhesive layer 104 has a structure in which the electrostatic chuck member 102 and the temperature adjusting base member 103 are bonded and integrated.
- the thickness of the adhesive layer 104 is preferably 100 ⁇ m or more and 200 ⁇ m or less, and more preferably 130 ⁇ m or more and 170 ⁇ m or less. When the thickness of the adhesive layer 104 is within the above range, the adhesive strength between the electrostatic chuck member 102 and the temperature adjusting base member 103 can be sufficiently maintained. Further, sufficient thermal conductivity can be ensured between the electrostatic chuck member 102 and the temperature adjusting base member 103.
- the adhesive layer 104 is formed of, for example, a cured product obtained by heat-curing a silicone-based resin composition, an acrylic resin, an epoxy resin, or the like.
- the silicone-based resin composition is a silicon compound having a siloxane bond (Si—O—Si), and is more preferable because it is a resin having excellent heat resistance and elasticity.
- a silicone resin having a thermosetting temperature of 70 ° C. to 140 ° C. is particularly preferable.
- thermosetting temperature when the thermosetting temperature is lower than 70 ° C., when the electrostatic chuck member 102 and the temperature adjusting base member 103 are joined in a state of facing each other, the curing does not proceed sufficiently in the joining process, and the workability is improved. Not preferable because it is inferior.
- thermal curing temperature exceeds 140 ° C., the difference in thermal expansion between the electrostatic chuck member 102 and the temperature adjusting base member 103 is large, and the stress between the electrostatic chuck member 102 and the temperature adjusting base member 103 increases. It is not preferable because it increases and peeling may occur between them.
- thermosetting temperature when the thermosetting temperature is 70 ° C. or higher, workability is excellent in the joining process, and when the thermosetting temperature is 140 ° C. or lower, the electrostatic chuck member 102 and the temperature adjusting base member 103 are separated from each other. It is preferable because it is difficult.
- the electrostatic chuck member 102 is made of the ceramic junction 1, it is possible to suppress the occurrence of dielectric breakdown (discharge) in the electrostatic chuck member 102.
- An adhesive made of a silicone-based resin composition is applied to a predetermined region of one main surface 103a of the temperature adjusting base member 103.
- the amount of the adhesive applied is adjusted to an amount that allows the electrostatic chuck member 102 and the temperature adjusting base member 103 to be joined and integrated.
- Examples of the method for applying this adhesive include a bar coating method, a screen printing method, and the like, in addition to manually applying the adhesive using a spatula or the like.
- the electrostatic chuck member 102 and the temperature adjusting base member 103 coated with the adhesive are overlapped with each other. Further, the standing power feeding terminal 116 is inserted into the fixing hole 115 formed in the temperature adjusting base member 103 and fitted. Next, the electrostatic chuck member 102 is pressed against the temperature adjusting base member 103 with a predetermined pressure, and the electrostatic chuck member 102 and the temperature adjusting base member 103 are joined and integrated. As a result, the electrostatic chuck member 102 and the temperature adjusting base member 103 are joined and integrated via the adhesive layer 104.
- the electrostatic chuck device 100 of the present embodiment is obtained in which the electrostatic chuck member 102 and the temperature adjusting base member 103 are joined and integrated via the adhesive layer 104.
- the plate-shaped sample according to the present embodiment is not limited to a semiconductor wafer, but may be, for example, a glass substrate for a flat plate display (FPD) such as a liquid crystal display (LCD), a plasma display (PDP), or an organic EL display. You may. Further, the electrostatic chuck device of the present embodiment may be designed according to the shape and size of the substrate.
- FPD flat plate display
- LCD liquid crystal display
- PDP plasma display
- organic EL display organic EL display
- the present invention also includes the following aspects.
- the pair of ceramic plates comprises a pair of ceramic plates, an electrode layer interposed between the pair of ceramic plates, and an insulating layer arranged around the electrode layer between the pair of ceramic plates.
- the plate is composed of an insulating material and a conductive material, respectively, the insulating layer is composed of an insulating material and a conductive material, and the electrode layer is a sintered body of particles of the conductive material or an insulating material.
- a ceramic junction made of a sintered body of ceramic particles and particles of a conductive material.
- the pair of ceramic plates comprises a pair of ceramic plates, an electrode layer interposed between the pair of ceramic plates, and an insulating layer arranged around the electrode layer between the pair of ceramic plates.
- the plate is composed of an insulating material and a conductive material, respectively, and the insulating layer is composed of an insulating material and a conductive material, and is integrated with one of the pair of ceramic plates.
- a ceramic joint composed of a sintered body of particles of a conductive material or a sintered body of particles of an insulating ceramic and particles of a conductive material.
- Example 1 A mixed powder of 91% by mass of aluminum oxide powder (particles) and 9% by mass of silicon carbide powder (particles) is molded and sintered, and a disk-shaped aluminum oxide-silicon carbide having a diameter of 450 mm and a thickness of 5.0 mm is formed. Ceramic plates (first ceramic plate, second ceramic plate) made of a composite sintered body were produced.
- an electrode layer forming paste containing a conductive material was applied to one surface of the first ceramic plate by a screen printing method to form an electrode layer coating film.
- the electrode layer forming paste As the electrode layer forming paste, a dispersion liquid in which aluminum oxide powder and molybdenum carbide powder were dispersed in isopropyl alcohol was used.
- the content of the aluminum oxide powder in the paste for forming the electrode layer was 25% by mass, and the content of the molybdenum carbide powder was 25% by mass.
- an insulating layer forming paste containing an insulating material and a conductive material was applied to one surface of the first ceramic plate to form an insulating layer coating film.
- a dispersion liquid in which aluminum oxide powder and silicon carbide powder were dispersed in isopropyl alcohol was used as the paste for forming the insulating layer.
- the content of the aluminum oxide powder in the paste for forming the insulating layer was 55% by mass, and the content of the silicon carbide powder was 5% by mass.
- the first ceramic plate was laminated on the joint surface of the second ceramic plate with the surface on which the electrode layer coating film and the insulating layer coating film were formed facing inside.
- the laminate containing the first ceramic plate, the electrode layer coating film, the insulating layer coating film, and the second ceramic plate was pressurized in the thickness direction while heating under an argon atmosphere.
- the heat treatment temperature was 1700 ° C.
- the pressing force was 10 MPa
- the heat treatment and pressurizing time was 2 hours.
- the insulation of the ceramic joint was evaluated as follows. On the side surface of the ceramic joint (side surface in the thickness direction of the ceramic joint), the carbon tape was attached in a posture in contact with the first ceramic plate, the insulating layer and the second ceramic plate.
- a through electrode was formed by penetrating the first ceramic plate in the thickness direction from the surface opposite to the surface of the first ceramic plate in contact with the electrode layer to the electrode layer.
- a voltage was applied to the ceramic joint via the carbon tape and the through electrode, and the voltage at which the ceramic joint breaks down was measured. Specifically, with a voltage of 3000 V applied, an RF voltage was applied and held for 10 minutes, then a voltage of 500 V was gradually applied and held for 10 minutes, and the measured current value was 0.1 mA (milliampere). The place beyond the above was regarded as dielectric breakdown. The results are shown in Table 1.
- Example 2 One surface of the first ceramic plate (the joint surface with the second ceramic plate) is ground, and one surface of the first ceramic plate is subjected to the thickness direction of the first ceramic plate. A recess with an inclined surface was formed. The opening diameter of the formed recess gradually decreased in the thickness direction of the first ceramic plate.
- the electrode layer forming paste was applied to the recesses formed in the first ceramic plate by the screen printing method to form an electrode layer coating film.
- the same paste as in Example 1 was used as the electrode layer forming paste.
- the thickness of the electrode layer coating film is 80% of the depth at the deepest part of the recess, and the thickness of the other partial electrode layer coating film is aligned with the surface of the electrode layer coating film at the deepest part of the recess. Adjusted with.
- the “depth of the recess” refers to the distance from the reference surface to the bottom of the recess when a perpendicular line is drawn from the reference surface to the bottom of the recess with one surface of the first ceramic plate as the reference surface.
- the second ceramic plate was laminated on one surface of the first ceramic plate in a posture in which the surface on which the electrode layer coating film was formed was on the inside.
- the laminate containing the first ceramic plate, the electrode layer coating film, and the second ceramic plate was pressurized in the thickness direction while heating under an argon atmosphere.
- the heat treatment temperature was 1700 ° C.
- the pressing force was 10 MPa
- the heat treatment and pressurizing time was 2 hours.
- the density of the electrode layer was determined by the method described above (method for measuring the relative density of the electrode layer). In the ceramic joint of Example 1, the density of the outer edge portion of the electrode layer was almost 100%.
- Table 2 shows the results of each evaluation.
- the ceramic joint of Example 2 has a relatively low density of the outer edge of the electrode layer as compared with the ceramic joint of Example 1, but shows an insulating property comparable to that of Example 1 and is compared. It was found that the withstand voltage was higher than that of the ceramic joint in the example.
- the method of forming the insulating layer is different between the first embodiment and the second embodiment, the functions of the insulating layer are common. Therefore, even if the outer edge of the electrode layer has a low density as in the second embodiment in the configuration of the first embodiment, it is assumed that the dielectric strength is higher than that of the ceramic junction of the comparative example.
- the ceramic joint of the present invention includes a pair of ceramic plates, an electrode layer and an insulating layer interposed between the pair of ceramic plates, and the insulating layer is composed of an insulating material and a conductive material. Therefore, dielectric breakdown (discharge) is suppressed at the junction interface between the ceramic plate and the insulating layer.
- Such a ceramic joint is suitably used for an electrostatic chuck member of an electrostatic chuck device, and its usefulness is very great.
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Abstract
A ceramic assembly 1 comprises a pair of ceramic plates 2, 3, and an electrode layer 4 and an insulating layer 5 which are interposed between the pair of ceramic plates 2, 3, wherein the insulating layer 5 is composed of an insulating material and a conductive material.
Description
本発明は、セラミックス接合体、静電チャック装置に関する。
本願は、２０２０年１２月２８日に出願された日本国特願２０２０－２１８６７８号に基づき優先権を主張し、その内容をここに援用する。 The present invention relates to a ceramic joint and an electrostatic chuck device.
This application claims priority based on Japanese Patent Application No. 2020-218678 filed on December 28, 2020, the contents of which are incorporated herein by reference.
本願は、２０２０年１２月２８日に出願された日本国特願２０２０－２１８６７８号に基づき優先権を主張し、その内容をここに援用する。 The present invention relates to a ceramic joint and an electrostatic chuck device.
This application claims priority based on Japanese Patent Application No. 2020-218678 filed on December 28, 2020, the contents of which are incorporated herein by reference.
従来、ＩＣ、ＬＳＩ、ＶＬＳＩ等の半導体装置を製造する半導体製造工程においては、シリコンウエハ等の板状試料は、静電チャック機能を備えた静電チャック部材に静電吸着により固定されて所定の処理が施される。
Conventionally, in a semiconductor manufacturing process for manufacturing semiconductor devices such as ICs, LSIs, and VLSIs, a plate-shaped sample such as a silicon wafer is fixed to a predetermined electrostatic chuck member having an electrostatic chuck function by electrostatic adsorption. Processing is applied.
例えば、この板状試料にプラズマ雰囲気下にてエッチング処理等を施す場合、プラズマの熱により板状試料の表面が高温になり、表面のレジスト膜が張り裂ける（バーストする）等の問題が生じる。
For example, when the plate-shaped sample is etched in a plasma atmosphere, the surface of the plate-shaped sample becomes hot due to the heat of the plasma, and the resist film on the surface is torn (burst).
そこで、この板状試料の温度を所望の一定の温度に維持するために、冷却機能を有する静電チャック装置が用いられている。このような静電チャック装置は、上記の静電チャック部材と、金属製の部材の内部に温度制御用の冷却媒体を循環させる流路が形成された温度調整用ベース部材とを備えている。静電チャック部材と温度調整用ベース部材とは、静電チャック部材の下面において、シリコーン系接着剤を介して接合・一体化している。
Therefore, in order to maintain the temperature of this plate-shaped sample at a desired constant temperature, an electrostatic chuck device having a cooling function is used. Such an electrostatic chuck device includes the above-mentioned electrostatic chuck member and a temperature control base member in which a flow path for circulating a cooling medium for temperature control is formed inside the metal member. The electrostatic chuck member and the temperature control base member are joined and integrated on the lower surface of the electrostatic chuck member via a silicone-based adhesive.
この静電チャック装置では、温度調整用ベース部材の流路に温度調整用の冷却媒体を循環させて熱交換を行い、静電チャック部材の上面に固定された板状試料の温度を望ましい一定の温度に維持しつつ静電吸着できる。そのため、上記静電チャック装置を用いると、静電吸着する板状試料の温度を維持しながら、板状試料に各種のプラズマ処理を施すことができる。
In this electrostatic chuck device, a cooling medium for temperature adjustment is circulated in the flow path of the temperature adjustment base member to exchange heat, and the temperature of the plate-shaped sample fixed to the upper surface of the electrostatic chuck member is desirable and constant. Electrostatic adsorption is possible while maintaining the temperature. Therefore, by using the electrostatic chuck device, it is possible to perform various plasma treatments on the plate-shaped sample while maintaining the temperature of the plate-shaped sample that is electrostatically adsorbed.
静電チャック部材としては、一対のセラミックス板と、それらの間に介在する電極層とを備えたセラミックス接合体を含む構成が知られている。このようなセラミックス接合体の製造方法としては、例えば、一方のセラミックス焼結体に溝を掘って、その溝の中に導電層を形成し、セラミックス焼結体とともに導電層を研削、鏡面研磨した後、ホットプレスにより、一方のセラミックス焼結体に他方のセラミックス焼結体を接合する方法が知られている（例えば、特許文献１参照）。
As the electrostatic chuck member, a configuration including a ceramic bonding body including a pair of ceramic plates and an electrode layer interposed between them is known. As a method for manufacturing such a ceramic joint, for example, a groove is dug in one of the ceramic sintered bodies, a conductive layer is formed in the groove, and the conductive layer is ground and mirror-polished together with the ceramic sintered body. Later, a method of joining one ceramic sintered body to the other ceramic sintered body by hot pressing is known (see, for example, Patent Document 1).
特許文献１では、一対のセラミックス板を貼り合わせる界面（接合界面）に、微小な空間（ボイド）が残存することがあり、この機構により静電チャック部材の耐電圧が低下する、すなわち絶縁破壊するおそれが指摘されている。このようなボイドを有する静電チャック部材は、誘電層（セラミックス板）に高い電圧を印加すると、ボイドに電荷が溜まり、放電するよりセラミックス板が絶縁破壊すると予想される。
In Patent Document 1, a minute space (void) may remain at the interface (joining interface) where a pair of ceramic plates are bonded together, and this mechanism reduces the withstand voltage of the electrostatic chuck member, that is, dielectric breakdown. The fear has been pointed out. In the electrostatic chuck member having such a void, when a high voltage is applied to the dielectric layer (ceramic plate), it is expected that the electric charge accumulates in the void and the ceramic plate undergoes dielectric breakdown rather than being discharged.
しかしながら、特許文献１に記載の方法では、電極層とセラミックス板の間にボイドが生じることを充分に抑制することができなかった。そのため、特許文献１に記載のセラミックス接合体では、放電によるセラミックス板の絶縁破壊を十分に防ぐことができず、改善が求められていた。
However, the method described in Patent Document 1 could not sufficiently suppress the formation of voids between the electrode layer and the ceramic plate. Therefore, the ceramic joint described in Patent Document 1 cannot sufficiently prevent the dielectric breakdown of the ceramic plate due to electric discharge, and improvement is required.
本発明は、上記事情に鑑みてなされたものであって、高い電圧を印加した場合に、放電によりセラミックス板の絶縁破壊が発生することを抑制したセラミックス接合体、セラミックス接合体を含む静電チャック装置を提供することを目的とする。
The present invention has been made in view of the above circumstances, and is an electrostatic chuck including a ceramic joint and a ceramic joint that suppresses dielectric breakdown of a ceramic plate due to electric discharge when a high voltage is applied. The purpose is to provide the device.
上記の課題を解決するため、本発明は以下の態様を包含する。
In order to solve the above problems, the present invention includes the following aspects.
［１］一対のセラミックス板と、前記一対のセラミックス板の間に介在する電極層と、前記一対のセラミックス板の間において、前記電極層の周囲に配置された絶縁層と、を備え、前記絶縁層は、絶縁性材料と導電性材料から構成される、セラミックス接合体。
[1] A pair of ceramic plates, an electrode layer interposed between the pair of ceramic plates, and an insulating layer arranged around the electrode layer between the pair of ceramic plates are provided, and the insulating layer is insulated. A ceramic joint composed of a sex material and a conductive material.
［２］前記絶縁層は、前記一対のセラミックス板の一方と一体的に形成されている、［１］に記載のセラミックス接合体。
[2] The ceramic joint according to [1], wherein the insulating layer is integrally formed with one of the pair of ceramic plates.
［３］前記絶縁性材料は、Ａｌ２Ｏ３、ＡｌＮ、Ｓｉ３Ｎ４、Ｙ２Ｏ３、ＹＡＧ、ＳｍＡｌＯ３、ＭｇＯ及びＳｉＯ２からなる群から選択される少なくとも１種である、［１］又は［２］に記載のセラミックス接合体。
[3] The insulating material is at least one selected from the group consisting of Al 2 O 3 , Al N, Si 3 N 4 , Y 2 O 3 , YAG, SmAlO 3 , MgO and SiO 2. [1] ] Or [2].
［４］前記導電性材料は、ＳｉＣ、ＴｉＯ２、ＴｉＮ、ＴｉＣ、Ｗ、ＷＣ、Ｍｏ、Ｍｏ２Ｃ及びＣからなる群から選択される少なくとも１種である、［１］から［３］のいずれか１項に記載のセラミックス接合体。
[4] The conductive material is at least one selected from the group consisting of SiC, TiO 2 , TiN, TiC, W, WC, Mo, Mo 2 C and C, according to [1] to [3]. The ceramic joint according to any one of the items.
［５］前記電極層の外縁の相対密度は、前記電極層の中心の相対密度よりも低密度である［１］から［４］のいずれか１項に記載のセラミックス接合体。
[5] The ceramic junction according to any one of [1] to [4], wherein the relative density of the outer edge of the electrode layer is lower than the relative density of the center of the electrode layer.
［６］前記一対のセラミックス板の材料が、互いに同じである［１］から［５］のいずれか１項に記載のセラミックス接合体。
[6] The ceramic joint according to any one of [1] to [5], wherein the materials of the pair of ceramic plates are the same as each other.
［７］前記一対のセラミックス板が、絶縁性材料と導電性材料とから構成される［１］から［６］のいずれか１項に記載のセラミックス接合体。
[7] The ceramic joint according to any one of [1] to [6], wherein the pair of ceramic plates is composed of an insulating material and a conductive material.
［８］セラミックスからなる静電チャック部材と、金属からなる温度調整用ベース部材とを、接着剤層を介して接合してなる静電チャック装置であって、前記静電チャック部材は、［１］から［７］のいずれか１項に記載のセラミックス接合体からなる、静電チャック装置。
[8] An electrostatic chuck device in which an electrostatic chuck member made of ceramics and a temperature control base member made of metal are joined via an adhesive layer, and the electrostatic chuck member is [1]. ] To [7], the electrostatic chuck device comprising the ceramic joint according to any one of the items.
本発明によれば、高い電圧を印加した場合に、放電によりセラミックス板の絶縁破壊が発生することを抑制したセラミックス接合体、セラミックス接合体を含む静電チャック装置を提供することができる。
According to the present invention, it is possible to provide a ceramic joint and an electrostatic chuck device including a ceramic joint that suppresses dielectric breakdown of a ceramic plate due to electric discharge when a high voltage is applied.
本発明のセラミックス接合体、静電チャック装置の実施の形態について説明する。
なお、本実施の形態は、発明の趣旨をより良く理解させるために具体的に説明するものであり、特に指定のない限り、本発明を限定するものではない。 An embodiment of the ceramic joint and the electrostatic chuck device of the present invention will be described.
It should be noted that the present embodiment is specifically described in order to better understand the gist of the invention, and is not limited to the present invention unless otherwise specified.
なお、本実施の形態は、発明の趣旨をより良く理解させるために具体的に説明するものであり、特に指定のない限り、本発明を限定するものではない。 An embodiment of the ceramic joint and the electrostatic chuck device of the present invention will be described.
It should be noted that the present embodiment is specifically described in order to better understand the gist of the invention, and is not limited to the present invention unless otherwise specified.
［セラミックス接合体］
以下、図１を参照しながら、本発明の一実施形態に係るセラミックス接合体について説明する。図１において、紙面の左右方向（セラミックス接合体の幅方向）をＸ方向、紙面の上下方向（セラミックス接合体の厚さ方向）をＹ方向とする。
なお、以下の全ての図面においては、図面を見易くするため、各構成要素の寸法や比率等は適宜異ならせてある。 [Ceramics joint]
Hereinafter, the ceramic joint according to the embodiment of the present invention will be described with reference to FIG. 1. In FIG. 1, the left-right direction of the paper surface (width direction of the ceramic joint) is the X direction, and the vertical direction of the paper (thickness direction of the ceramic joint) is the Y direction.
In all the drawings below, the dimensions and ratios of each component are appropriately different in order to make the drawings easier to see.
以下、図１を参照しながら、本発明の一実施形態に係るセラミックス接合体について説明する。図１において、紙面の左右方向（セラミックス接合体の幅方向）をＸ方向、紙面の上下方向（セラミックス接合体の厚さ方向）をＹ方向とする。
なお、以下の全ての図面においては、図面を見易くするため、各構成要素の寸法や比率等は適宜異ならせてある。 [Ceramics joint]
Hereinafter, the ceramic joint according to the embodiment of the present invention will be described with reference to FIG. 1. In FIG. 1, the left-right direction of the paper surface (width direction of the ceramic joint) is the X direction, and the vertical direction of the paper (thickness direction of the ceramic joint) is the Y direction.
In all the drawings below, the dimensions and ratios of each component are appropriately different in order to make the drawings easier to see.
図１は、本実施形態のセラミックス接合体を示す断面図である。図１に示すように、本実施形態のセラミックス接合体１は、一対のセラミックス板２，３と、一対のセラミックス板２，３の間に介在する電極層４及び絶縁層５と、を備える。
FIG. 1 is a cross-sectional view showing the ceramic joint of the present embodiment. As shown in FIG. 1, the ceramic joint 1 of the present embodiment includes a pair of ceramic plates 2 and 3 and an electrode layer 4 and an insulating layer 5 interposed between the pair of ceramic plates 2 and 3.
図１に示す断面図は、平面視においてセラミックス接合体１に外接する円のうち最小の円を想定したとき、この円の中心を含む仮想面により、セラミックス接合体を切断した断面である。セラミックス接合体１が平面視で略円形である場合、上記円の中心と、平面視におけるセラミックス接合体の形状の中心とは凡そ一致する。
The cross-sectional view shown in FIG. 1 is a cross-sectional view obtained by cutting the ceramic joint by a virtual surface including the center of the circle, assuming the smallest circle among the circles circumscribing the ceramic joint 1 in a plan view. When the ceramic joint 1 is substantially circular in plan view, the center of the circle and the center of the shape of the ceramic joint in plan view are approximately the same.
なお、本明細書において「平面視」とは、セラミックス接合体の厚さ方向であるＹ方向から見た視野を指す。
また、本明細書において「外縁」とは、対象物を平面視したときの外周近傍の領域を指す。 In the present specification, the "planar view" refers to a field of view seen from the Y direction, which is the thickness direction of the ceramic joint.
Further, in the present specification, the "outer edge" refers to a region near the outer circumference when the object is viewed in a plan view.
また、本明細書において「外縁」とは、対象物を平面視したときの外周近傍の領域を指す。 In the present specification, the "planar view" refers to a field of view seen from the Y direction, which is the thickness direction of the ceramic joint.
Further, in the present specification, the "outer edge" refers to a region near the outer circumference when the object is viewed in a plan view.
以下、セラミックス板２を第１のセラミックス板２、セラミックス板３を第２のセラミックス板３と言うことがある。
Hereinafter, the ceramic plate 2 may be referred to as a first ceramic plate 2, and the ceramic plate 3 may be referred to as a second ceramic plate 3.
図１に示すように、セラミックス接合体１は、第１のセラミックス板２と、電極層４及び絶縁層５と、第２のセラミックス板３とがこの順に積層されている。すなわち、セラミックス接合体１は、第１のセラミックス板２と第２のセラミックス板３が、電極層４及び絶縁層５を介して、接合一体化されてなる接合体である。また、電極層４及び絶縁層５は、第１のセラミックス板２において第２のセラミックス板３と対向する接合面２ａ、及び第２のセラミックス板３において第１のセラミックス板２と対向する接合面３ａに接して設けられている。
As shown in FIG. 1, in the ceramic joint 1, the first ceramic plate 2, the electrode layer 4, the insulating layer 5, and the second ceramic plate 3 are laminated in this order. That is, the ceramic joint 1 is a joint in which the first ceramic plate 2 and the second ceramic plate 3 are joined and integrated via the electrode layer 4 and the insulating layer 5. Further, the electrode layer 4 and the insulating layer 5 are a joint surface 2a facing the second ceramic plate 3 in the first ceramic plate 2 and a joint surface facing the first ceramic plate 2 in the second ceramic plate 3. It is provided in contact with 3a.
本実施形態のセラミックス接合体１では、絶縁層５は、絶縁性材料と導電性材料から構成される。
In the ceramic joint 1 of the present embodiment, the insulating layer 5 is composed of an insulating material and a conductive material.
（セラミックス板）
第１のセラミックス板２及び第２のセラミックス板３は、その重ね合わせ面の外周の形状を同じくする。
第１のセラミックス板２及び第２のセラミックス板３の厚さは、特に限定されず、セラミックス接合体１の用途に応じて適宜調整される。 (Ceramic plate)
The firstceramic plate 2 and the second ceramic plate 3 have the same outer peripheral shape of the overlapping surface.
The thicknesses of the firstceramic plate 2 and the second ceramic plate 3 are not particularly limited, and are appropriately adjusted according to the use of the ceramic joint 1.
第１のセラミックス板２及び第２のセラミックス板３は、その重ね合わせ面の外周の形状を同じくする。
第１のセラミックス板２及び第２のセラミックス板３の厚さは、特に限定されず、セラミックス接合体１の用途に応じて適宜調整される。 (Ceramic plate)
The first
The thicknesses of the first
第１のセラミックス板２及び第２のセラミックス板３は、同一組成又は主成分が同一である。第１のセラミックス板２及び第２のセラミックス板３は、絶縁性材料と導電性材料の複合体からなる。
The first ceramic plate 2 and the second ceramic plate 3 have the same composition or the same main component. The first ceramic plate 2 and the second ceramic plate 3 are made of a composite of an insulating material and a conductive material.
第１のセラミックス板２及び第２のセラミックス板３に含まれる絶縁性材料は、特に限定されないが、例えば、酸化アルミニウム（Ａｌ２Ｏ３）、窒化アルミニウム（ＡｌＮ）、酸化イットリウム（Ｙ２Ｏ３）、イットリウム・アルミニウム・ガーネット（ＹＡＧ）等が挙げられる。なかでも、Ａｌ２Ｏ３、ＡｌＮが好ましい。
The insulating material contained in the first ceramic plate 2 and the second ceramic plate 3 is not particularly limited, and is, for example, aluminum oxide (Al 2 O 3 ), aluminum nitride (Al N), yttrium oxide (Y 2 O 3 ). ), Yttrium aluminum garnet (YAG) and the like. Of these, Al 2 O 3 and Al N are preferable.
第１のセラミックス板２及び第２のセラミックス板３に含まれる導電性材料は、特に限定されないが、例えば、炭化ケイ素（ＳｉＣ）、酸化チタン（ＴｉＯ２）、窒化チタン（ＴｉＮ）、炭化チタン（ＴｉＣ）、炭素材料、希土類酸化物、希土類フッ化物等が挙げられる。炭素材料としては、カーボンナノチューブ（ＣＮＴ）、カーボンナノファイバーが挙げられる。なかでも、ＳｉＣが好ましい。
The conductive material contained in the first ceramic plate 2 and the second ceramic plate 3 is not particularly limited, and for example, silicon carbide (SiC), titanium oxide (TIO 2 ), titanium nitride (TiN), titanium carbide (Titanium carbide) ( TiC), carbon materials, rare earth oxides, rare earth fluorides and the like can be mentioned. Examples of the carbon material include carbon nanotubes (CNTs) and carbon nanofibers. Of these, SiC is preferable.
第１のセラミックス板２及び第２のセラミックス板３の材料は、体積固有抵抗値が１０１３Ω・ｃｍ以上１０１７Ω・ｃｍ以下程度であり、機械的な強度を有し、しかも腐食性ガス及びそのプラズマに対する耐久性を有する材料であれば、特に限定されない。このような材料としては、例えば、Ａｌ２Ｏ３焼結体、ＡｌＮ焼結体、Ａｌ２Ｏ３－ＳｉＣ複合焼結体等が挙げられる。高温での誘電特性、高耐食性、耐プラズマ性、耐熱性の観点から、第１のセラミックス板２及び第２のセラミックス板３の材料は、Ａｌ２Ｏ３－ＳｉＣ複合焼結体が好ましい。
The materials of the first ceramic plate 2 and the second ceramic plate 3 have a volume resistivity of 10 13 Ω · cm or more and 10 17 Ω · cm or less, have mechanical strength, and are corrosive gas. The material is not particularly limited as long as it is a material having durability against the plasma. Examples of such a material include an Al2O3 sintered body, an AlN sintered body , an Al2O3 - SiC composite sintered body and the like. From the viewpoint of dielectric properties at high temperature, high corrosion resistance, plasma resistance, and heat resistance, the material of the first ceramic plate 2 and the second ceramic plate 3 is preferably an Al2O3 -SiC composite sintered body.
第１のセラミックス板２及び第２のセラミックス板３を構成する絶縁性材料の平均一次粒子径は、０．５μｍ以上３．０μｍ以下が好ましく、０．７μｍ以上２．０μｍ以下がより好ましく、１．０μｍ以上２．０μｍ以下がさらに好ましい。
The average primary particle diameter of the insulating material constituting the first ceramic plate 2 and the second ceramic plate 3 is preferably 0.5 μm or more and 3.0 μm or less, and more preferably 0.7 μm or more and 2.0 μm or less. More preferably, it is 0.0 μm or more and 2.0 μm or less.
第１のセラミックス板２及び第２のセラミックス板３を構成する絶縁性材料の平均一次粒子径が０．５μｍ以上３．０μｍ以下であれば、緻密で耐電圧性が高く、耐久性の高い第１のセラミックス板２及び第２のセラミックス板３が得られる。
When the average primary particle diameter of the insulating material constituting the first ceramic plate 2 and the second ceramic plate 3 is 0.5 μm or more and 3.0 μm or less, it is dense, has high withstand voltage resistance, and has high durability. The ceramic plate 2 of 1 and the second ceramic plate 3 are obtained.
第１のセラミックス板２及び第２のセラミックス板３を構成する絶縁性材料の平均一次粒子径の測定方法は、次の通りである。日本電子社製の電解放出型走査電子顕微鏡（ＦＥ－ＳＥＭ。日本電子株式会社製、ＪＳＭ－７８００Ｆ－Ｐｒｉｍｅ）で１００００倍に拡大して、第１のセラミックス板２及び第２のセラミックス板３の厚さ方向の切断面を観察し、インターセプト法により絶縁性材料２００個の粒子径の平均を平均一次粒子径とする。
The method for measuring the average primary particle diameter of the insulating material constituting the first ceramic plate 2 and the second ceramic plate 3 is as follows. The first ceramic plate 2 and the second ceramic plate 3 were magnified 10,000 times with an electrolytic emission scanning electron microscope (FE-SEM. JSM-7800F-Prime manufactured by JEOL Ltd.) manufactured by JEOL Ltd. Observe the cut surface in the thickness direction, and use the intercept method to take the average of the particle sizes of 200 insulating materials as the average primary particle size.
（電極層）
電極層４は、高周波電力を通電してプラズマを発生させてプラズマ処理するためのプラズマ発生用電極、電荷を発生させて静電吸着力で板状試料を固定するための静電チャック用電極、通電発熱させて板状試料を加熱するためのヒータ電極等として用いられる構成である。電極層４の形状（電極層４を平面視した場合の形状）や、大きさ（厚さや、電極層４を平面視した場合の面積）は、特に限定されず、セラミックス接合体１の用途に応じて適宜調整される。 (Electrode layer)
Theelectrode layer 4 is an electrode for plasma generation for energizing high-frequency power to generate plasma and processing plasma, an electrode for electrostatic chuck for generating electric charge and fixing a plate-shaped sample by electrostatic adsorption force, and an electrode for electrostatic chuck. It is configured to be used as a heater electrode or the like for heating a plate-shaped sample by generating heat by energization. The shape (shape when the electrode layer 4 is viewed in a plan view) and the size (thickness and area when the electrode layer 4 is viewed in a plan view) of the electrode layer 4 are not particularly limited, and are used for the ceramic bonded body 1. It will be adjusted accordingly.
電極層４は、高周波電力を通電してプラズマを発生させてプラズマ処理するためのプラズマ発生用電極、電荷を発生させて静電吸着力で板状試料を固定するための静電チャック用電極、通電発熱させて板状試料を加熱するためのヒータ電極等として用いられる構成である。電極層４の形状（電極層４を平面視した場合の形状）や、大きさ（厚さや、電極層４を平面視した場合の面積）は、特に限定されず、セラミックス接合体１の用途に応じて適宜調整される。 (Electrode layer)
The
電極層４は、導電性材料の粒子の焼結体、又は絶縁性セラミックスの粒子と導電性材料の粒子との複合体（焼結体）から構成される。
The electrode layer 4 is composed of a sintered body of particles of a conductive material or a composite (sintered body) of particles of insulating ceramics and particles of a conductive material.
また、電極層４は、厚さ方向よりも厚さ方向と直交する方向に大きな広がりを有する薄型電極である。一例として、電極層４は、厚さ２０μｍ、直径２９ｃｍの円盤状である。このような電極層４は、後述するように、電極層形成用ペーストを塗布し焼結することで形成される。焼結により電極層形成用ペーストが体積収縮する際には等方的に収縮しやすいことから、厚さ方向よりも、厚さ方向に直交する方向において相対的に収縮量が大きくなる。そのため、電極層４の外縁、すなわち電極層４と絶縁層５との界面では、構造的にボイドが発生しやすい。
Further, the electrode layer 4 is a thin electrode having a large spread in the direction orthogonal to the thickness direction rather than the thickness direction. As an example, the electrode layer 4 has a disk shape with a thickness of 20 μm and a diameter of 29 cm. Such an electrode layer 4 is formed by applying and sintering an electrode layer forming paste, as will be described later. When the paste for forming the electrode layer shrinks by volume due to sintering, it tends to shrink isotropically, so that the amount of shrinkage is relatively larger in the direction orthogonal to the thickness direction than in the thickness direction. Therefore, voids are structurally likely to occur at the outer edge of the electrode layer 4, that is, at the interface between the electrode layer 4 and the insulating layer 5.
なお、本明細書において用語「ボイド」は、第１セラミックス板と電極層との界面、又は第２のセラミックス板と電極層との界面に生じる空間であって、長径が５０μｍ未満である空間を意味する。
In the present specification, the term "void" refers to a space generated at the interface between the first ceramic plate and the electrode layer or the interface between the second ceramic plate and the electrode layer, and has a major axis of less than 50 μm. means.
電極層４が絶縁性セラミックスと導電性材料から構成される場合、これらの混合材料の体積固有抵抗値は１０－６Ω・ｃｍ以上１０－２Ω・ｃｍ以下程度であることが好ましい。
When the electrode layer 4 is composed of insulating ceramics and a conductive material, the volume resistivity value of these mixed materials is preferably about 10-6 Ω · cm or more and 10-2 Ω · cm or less.
電極層４が絶縁性セラミックスと導電性材料との複合体から構成される場合、電極層４において、導電性材料の含有量は、１５質量％以上１００質量％以下が好ましく、２０質量％以上１００質量％以下がより好ましい。導電性材料の含有量が上記下限値以上であれば、セラミックス板３に充分な誘電特性を発現できる。
When the electrode layer 4 is composed of a composite of insulating ceramics and a conductive material, the content of the conductive material in the electrode layer 4 is preferably 15% by mass or more and 100% by mass or less, and 20% by mass or more and 100%. More preferably, it is by mass or less. When the content of the conductive material is at least the above lower limit value, sufficient dielectric properties can be exhibited in the ceramic plate 3.
電極層４に含まれる導電性材料は、導電性セラミックスであってもよく、金属や炭素材料等の導電性材料であってもよい。電極層４に含まれる導電性材料は、ＳｉＣ、ＴｉＯ２、ＴｉＮ、ＴｉＣ、タングステン（Ｗ）、炭化タングステン（ＷＣ）、モリブデン（Ｍｏ）、炭化モリブデン（Ｍｏ２Ｃ）、タンタル（Ｔａ）、炭化タンタル（ＴａＣ、Ｔａ４Ｃ５）、炭素材料及び導電性複合焼結体からなる群から選択される少なくとも１種が好ましい。
The conductive material contained in the electrode layer 4 may be a conductive ceramic or a conductive material such as a metal or a carbon material. The conductive materials contained in the electrode layer 4 are SiC, TiO 2 , TiN, TiC, tungsten (W), tungsten carbide (WC), molybdenum (Mo), molybdenum carbide (Mo 2C ), tantalum (Ta), and carbonization. At least one selected from the group consisting of tantalum (TaC, Ta 4C 5 ), carbon material and a conductive composite sintered body is preferred.
炭素材料としては、例えば、カーボンブラック、カーボンナノチューブ、カーボンナノファイバー等が挙げられる。
Examples of carbon materials include carbon black, carbon nanotubes, carbon nanofibers, and the like.
導電性複合焼結体としては、例えば、Ａｌ２Ｏ３－Ｔａ４Ｃ５、Ａｌ２Ｏ３－Ｗ、Ａｌ２Ｏ３－ＳｉＣ、ＡｌＮ－Ｗ、ＡｌＮ－Ｔａ等が挙げられる。
Examples of the conductive composite sintered body include Al 2 O 3 -Ta 4 C 5 , Al 2 O 3 -W, Al 2 O 3 -SiC, AlN-W, AlN-Ta and the like.
電極層４に含まれる導電性材料が前記物質からなる群から選択される少なくとも１種であることにより、電極層の導電率を担保できる。
When the conductive material contained in the electrode layer 4 is at least one selected from the group consisting of the above substances, the conductivity of the electrode layer can be ensured.
電極層４に含まれる絶縁性セラミックスは、特に限定されないが、例えば、Ａｌ２Ｏ３、ＡｌＮ、窒化ケイ素（Ｓｉ３Ｎ４）、Ｙ２Ｏ３、ＹＡＧ、サマリウム－アルミニウム酸化物（ＳｍＡｌＯ３）、酸化マグネシウム（ＭｇＯ）及び酸化ケイ素（ＳｉＯ２）からなる群から選択される少なくとも１種が好ましい。
The insulating ceramics contained in the electrode layer 4 are not particularly limited, and are, for example, Al 2 O 3 , Al N, silicon nitride (Si 3 N 4 ), Y 2 O 3 , YAG, and sumalium-aluminum oxide (SmAlO 3 ). , At least one selected from the group consisting of magnesium oxide (MgO) and silicon oxide (SiO 2 ) is preferable.
電極層４が、導電性材料と絶縁性材料からなることにより、第１のセラミックス板２及び、第２のセラミックス板３との接合強度並びに、電極としての機械的強度が強くなる。
Since the electrode layer 4 is made of a conductive material and an insulating material, the bonding strength between the first ceramic plate 2 and the second ceramic plate 3 and the mechanical strength as an electrode are increased.
電極層４に含まれる絶縁性材料が、Ａｌ２Ｏ３であることにより、高温での誘電特性、高耐食性、耐プラズマ性、耐熱性が保たれる。
Since the insulating material contained in the electrode layer 4 is Al 2 O 3 , the dielectric property at high temperature, high corrosion resistance, plasma resistance, and heat resistance are maintained.
電極層４における導電性材料と絶縁性材料の含有量の比（配合比）は、特に限定されず、セラミックス接合体１の用途に応じて適宜調整される。
The ratio (blending ratio) of the contents of the conductive material and the insulating material in the electrode layer 4 is not particularly limited, and is appropriately adjusted according to the use of the ceramic joint 1.
電極層４は、全体が同じ相対密度であってもよい。また、電極層４は、外縁において、電極層４の中心よりも低密度であってもよい。電極層４の密度（相対密度）は、セラミックス接合体１の断面について撮像する顕微鏡写真に基づいて求められる。
The entire electrode layer 4 may have the same relative density. Further, the electrode layer 4 may have a lower density at the outer edge than the center of the electrode layer 4. The density (relative density) of the electrode layer 4 is determined based on a micrograph taken of the cross section of the ceramic joint 1.
（電極層の相対密度の測定方法）
詳しくは、図１と同様の断面について、顕微鏡（例えば、キーエンス社製デジタルマイクロスコープ（ＶＦＸ－９００F））を用い、拡大倍率１０００倍の顕微鏡写真を撮像する。電極層４の外縁の相対密度を測定する場合、撮像範囲は、電極層４のＸ方向の端部（例えば＋Ｘ方向の端部）から、電極層４のＸ方向内側の方向（例えば－Ｘ方向）に向けて１５０μｍの範囲に含まれる電極層４である。当該範囲に含まれる電極層４を、以下、「密度測定領域」と称する。 (Measurement method of relative density of electrode layer)
Specifically, for the same cross section as in FIG. 1, a microscope (for example, a digital microscope (VFX-900F) manufactured by KEYENCE Corporation) is used to take a photomicrograph at a magnification of 1000 times. When measuring the relative density of the outer edge of theelectrode layer 4, the imaging range is from the X-direction end of the electrode layer 4 (for example, the + X-direction end) to the X-direction inner direction (for example, -X-direction) of the electrode layer 4. ) Is the electrode layer 4 included in the range of 150 μm. The electrode layer 4 included in this range is hereinafter referred to as a “density measurement region”.
詳しくは、図１と同様の断面について、顕微鏡（例えば、キーエンス社製デジタルマイクロスコープ（ＶＦＸ－９００F））を用い、拡大倍率１０００倍の顕微鏡写真を撮像する。電極層４の外縁の相対密度を測定する場合、撮像範囲は、電極層４のＸ方向の端部（例えば＋Ｘ方向の端部）から、電極層４のＸ方向内側の方向（例えば－Ｘ方向）に向けて１５０μｍの範囲に含まれる電極層４である。当該範囲に含まれる電極層４を、以下、「密度測定領域」と称する。 (Measurement method of relative density of electrode layer)
Specifically, for the same cross section as in FIG. 1, a microscope (for example, a digital microscope (VFX-900F) manufactured by KEYENCE Corporation) is used to take a photomicrograph at a magnification of 1000 times. When measuring the relative density of the outer edge of the
上記顕微鏡写真によれば、電極層４の断面と重なる仮想面において、電極層４を構成する導電性セラミックス及び絶縁性セラミックスが存在する領域（物質が存在する領域。領域１）と、導電性セラミックス及び絶縁性セラミックスのいずれも存在しない「気孔」の領域（領域２）とが区別可能である。
According to the above micrograph, in the virtual surface overlapping the cross section of the electrode layer 4, the region where the conductive ceramics and the insulating ceramics constituting the electrode layer 4 exist (the region where the substance exists. Region 1) and the conductive ceramics. It is distinguishable from the region of "pores" (region 2) in which none of the insulating ceramics is present.
電極層４の外縁の相対密度は、密度測定領域の外輪郭内の面積、すなわち領域１と領域２との合計面積に対する領域１の面積の割合を、百分率で表した値である。電極層４に気孔が存在しない場合には、密度測定領域の相対密度は１００％である。
The relative density of the outer edge of the electrode layer 4 is a value obtained by expressing the area in the outer contour of the density measurement region, that is, the ratio of the area of the region 1 to the total area of the region 1 and the region 2 as a percentage. When there are no pores in the electrode layer 4, the relative density in the density measurement region is 100%.
また、電極層４の中心の相対密度を測定する場合、撮像範囲は、電極層４のＸ方向の中央を含む領域（中心）である。なお、顕微鏡写真から、電極層４の中心と同様の密度を有すると合理的に判断できる場合には、撮像範囲は、厳密に電極層４の中央を含まなくてもよい。
When measuring the relative density of the center of the electrode layer 4, the imaging range is the region (center) including the center of the electrode layer 4 in the X direction. If it can be reasonably determined from the micrograph that the density is similar to that of the center of the electrode layer 4, the imaging range may not strictly include the center of the electrode layer 4.
得られた顕微鏡写真において、Ｘ方向に１５０μｍの範囲に含まれる電極層４を「密度測定領域」とし、電極層４の外縁の密度を測定する場合と同様に計算することで、電極層４の中心の相対密度が求められる。
In the obtained micrograph, the electrode layer 4 included in the range of 150 μm in the X direction is defined as the “density measurement region”, and the density of the outer edge of the electrode layer 4 is calculated in the same manner as in the case of measuring the density of the electrode layer 4. The relative density of the center is calculated.
以上のように求められる相対密度を比較することで、電極層４の外縁において、電極層４の中心よりも低密度であるか否かを判断することができる。
By comparing the relative densities obtained as described above, it is possible to determine whether or not the outer edge of the electrode layer 4 has a lower density than the center of the electrode layer 4.
電極層４の外縁が低密度である場合、電極層４の外縁の相対密度は、５０％以上が好ましく、５５％以上がより好ましい。電極層４の外縁の相対密度が５０％未満であると、高密度である場合と比べ抵抗発熱が生じやすく、高周波電力印加時の面内温度均一性が低下しやすい。対して、電極層４の外縁の相対密度が５０％以上であるセラミックス接合体は、高周波電力印加時の面内温度均一性が保たれる。
When the outer edge of the electrode layer 4 has a low density, the relative density of the outer edge of the electrode layer 4 is preferably 50% or more, more preferably 55% or more. When the relative density of the outer edge of the electrode layer 4 is less than 50%, resistance heat generation is likely to occur as compared with the case of high density, and the in-plane temperature uniformity when high frequency power is applied is likely to decrease. On the other hand, the ceramic joint in which the relative density of the outer edge of the electrode layer 4 is 50% or more maintains the in-plane temperature uniformity when high frequency power is applied.
一例として、電極層４の相対密度が１００％である領域は、Ｘ方向の中央を含み、全幅に対して９５％以上であり、電極層４の相対密度が中心よりも低密度である領域は、Ｘ方向の両端部から２．５％ずつ、計５％以下である。
As an example, the region where the relative density of the electrode layer 4 is 100% includes the center in the X direction and is 95% or more with respect to the total width, and the region where the relative density of the electrode layer 4 is lower than the center is. , 2.5% from both ends in the X direction, totaling 5% or less.
（絶縁層）
絶縁層５は、第１のセラミックス板２と第２のセラミックス板３の境界部、すなわち電極層４形成部以外の外縁部領域を接合するために設けられた構成である。絶縁層５は、第１のセラミックス板２と第２のセラミックス板３との間（一対のセラミックス板の間）において、平面視で電極層４の周囲に配置されている。 (Insulation layer)
The insulatinglayer 5 is configured to join the boundary portion between the first ceramic plate 2 and the second ceramic plate 3, that is, the outer edge region other than the electrode layer 4 forming portion. The insulating layer 5 is arranged around the electrode layer 4 in a plan view between the first ceramic plate 2 and the second ceramic plate 3 (between the pair of ceramic plates).
絶縁層５は、第１のセラミックス板２と第２のセラミックス板３の境界部、すなわち電極層４形成部以外の外縁部領域を接合するために設けられた構成である。絶縁層５は、第１のセラミックス板２と第２のセラミックス板３との間（一対のセラミックス板の間）において、平面視で電極層４の周囲に配置されている。 (Insulation layer)
The insulating
絶縁層５の形状（絶縁層５を平面視した場合の形状）は、特に限定されず、電極層４の形状に応じて適宜調整される。
絶縁層５の厚さ（Ｙ方向の幅）は、電極層４の厚さと等しくなっている。 The shape of the insulating layer 5 (the shape when the insulatinglayer 5 is viewed in a plan view) is not particularly limited, and is appropriately adjusted according to the shape of the electrode layer 4.
The thickness of the insulating layer 5 (width in the Y direction) is equal to the thickness of theelectrode layer 4.
絶縁層５の厚さ（Ｙ方向の幅）は、電極層４の厚さと等しくなっている。 The shape of the insulating layer 5 (the shape when the insulating
The thickness of the insulating layer 5 (width in the Y direction) is equal to the thickness of the
絶縁層５は、絶縁性材料と導電性材料から構成される複合材料からなる。絶縁層５の体積固有抵抗値は、１０１３Ω・ｃｍ以上１０１７Ω・ｃｍ以下である。
絶縁層５を構成する絶縁性材料は、特に限定されないが、第１のセラミックス板２及び第２のセラミックス板３の主成分と同じであることが好ましい。絶縁層５を構成する絶縁性材料は、例えば、Ａｌ２Ｏ３、ＡｌＮ、Ｓｉ３Ｎ４、Ｙ２Ｏ３、ＹＡＧ、ＳｍＡｌＯ３、ＭｇＯ及びＳｉＯ２からなる群から選択される少なくとも１種であることが好ましい。絶縁層５を構成する絶縁性材料は、Ａｌ２Ｏ３が好ましい。絶縁層５を構成する絶縁性材料が、Ａｌ２Ｏ３であることにより、高温での誘電特性、高耐食性、耐プラズマ性、耐熱性が保たれる。 The insulatinglayer 5 is made of a composite material composed of an insulating material and a conductive material. The volume resistivity value of the insulating layer 5 is 10 13 Ω · cm or more and 10 17 Ω · cm or less.
The insulating material constituting the insulatinglayer 5 is not particularly limited, but is preferably the same as the main components of the first ceramic plate 2 and the second ceramic plate 3. The insulating material constituting the insulating layer 5 is, for example, at least one selected from the group consisting of Al 2 O 3 , Al N, Si 3 N 4 , Y 2 O 3 , YAG, SmAlO 3 , MgO and SiO 2 . It is preferable to have. Al 2 O 3 is preferable as the insulating material constituting the insulating layer 5. Since the insulating material constituting the insulating layer 5 is Al 2 O 3 , the dielectric property at high temperature, high corrosion resistance, plasma resistance, and heat resistance are maintained.
絶縁層５を構成する絶縁性材料は、特に限定されないが、第１のセラミックス板２及び第２のセラミックス板３の主成分と同じであることが好ましい。絶縁層５を構成する絶縁性材料は、例えば、Ａｌ２Ｏ３、ＡｌＮ、Ｓｉ３Ｎ４、Ｙ２Ｏ３、ＹＡＧ、ＳｍＡｌＯ３、ＭｇＯ及びＳｉＯ２からなる群から選択される少なくとも１種であることが好ましい。絶縁層５を構成する絶縁性材料は、Ａｌ２Ｏ３が好ましい。絶縁層５を構成する絶縁性材料が、Ａｌ２Ｏ３であることにより、高温での誘電特性、高耐食性、耐プラズマ性、耐熱性が保たれる。 The insulating
The insulating material constituting the insulating
絶縁層５を構成する導電性材料は、特に限定されないが、第１のセラミックス板２及び第２のセラミックス板３の主成分と同じであることが好ましい。絶縁層５を構成する導電性材料は、例えば、ＳｉＣ、ＴｉＯ２、ＴｉＮ、ＴｉＣ、Ｗ、ＷＣ、Ｍｏ、Ｍｏ２Ｃ及び炭素材料からなる群から選択される少なくとも１種が好ましい。炭素材料としては、例えば、カーボンナノチューブ、カーボンナノファイバー等が挙げられる。絶縁層５を構成する導電性材料は、ＳｉＣが好ましい。
The conductive material constituting the insulating layer 5 is not particularly limited, but is preferably the same as the main components of the first ceramic plate 2 and the second ceramic plate 3. The conductive material constituting the insulating layer 5 is preferably at least one selected from the group consisting of, for example, SiC, TiO 2 , TiN, TiC, W, WC, Mo, Mo 2 C and a carbon material. Examples of the carbon material include carbon nanotubes and carbon nanofibers. SiC is preferable as the conductive material constituting the insulating layer 5.
絶縁層５において、絶縁性材料の含有量は、８０質量％以上９６質量％以下が好ましく、８０質量％以上９５質量％以下がより好ましく、８５質量％以上９５質量％以下がさらに好ましい。絶縁性材料の含有量が上記下限値以上であれば、充分な耐電圧性が得られる。絶縁性材料の含有量が上記上限値以下であれば、絶縁層５に含有させる導電性材料の除電効果を充分に発現できる。
In the insulating layer 5, the content of the insulating material is preferably 80% by mass or more and 96% by mass or less, more preferably 80% by mass or more and 95% by mass or less, and further preferably 85% by mass or more and 95% by mass or less. When the content of the insulating material is at least the above lower limit value, sufficient withstand voltage resistance can be obtained. When the content of the insulating material is not more than the above upper limit value, the static elimination effect of the conductive material contained in the insulating layer 5 can be sufficiently exhibited.
絶縁層５において、導電性材料の含有量は、４質量％以上２０質量％以下が好ましく、５質量％以上２０質量％以下がより好ましく、５質量％以上１５質量％以下がさらに好ましい。導電性材料の含有量が上記下限値以上であれば、導電性材料の除電効果を充分に発現できる。導電性材料の含有量が上記上限値以下であれば、充分な耐電圧が得られる。
In the insulating layer 5, the content of the conductive material is preferably 4% by mass or more and 20% by mass or less, more preferably 5% by mass or more and 20% by mass or less, and further preferably 5% by mass or more and 15% by mass or less. When the content of the conductive material is at least the above lower limit value, the static elimination effect of the conductive material can be sufficiently exhibited. When the content of the conductive material is not more than the above upper limit value, a sufficient withstand voltage can be obtained.
絶縁層５を構成する絶縁性材料の平均一次粒子径は、０．５μｍ以上３．０μｍ以下が好ましく、０．７μｍ以上２．０μｍ以下がより好ましい。
The average primary particle size of the insulating material constituting the insulating layer 5 is preferably 0.5 μm or more and 3.0 μm or less, and more preferably 0.7 μm or more and 2.0 μm or less.
絶縁層５を構成する絶縁性材料の平均一次粒子径が０．５μｍ以上であれば、充分な耐電圧性が得られる。一方、絶縁層５を構成する絶縁性材料の平均一次粒子径が３．０μｍ以下であれば、研削等の加工が容易である。
If the average primary particle diameter of the insulating material constituting the insulating layer 5 is 0.5 μm or more, sufficient withstand voltage resistance can be obtained. On the other hand, when the average primary particle diameter of the insulating material constituting the insulating layer 5 is 3.0 μm or less, processing such as grinding is easy.
絶縁層５を構成する導電性材料の平均一次粒子径は、０．１μｍ以上１．０μｍ以下が好ましく、０．１μｍ以上０．８μｍ以下がより好ましい。
絶縁層５を構成する導電性材料の平均一次粒子径が０．１μｍ以上であれば、充分な耐電圧性が得られる。一方、絶縁層５を構成する導電性材料の平均一次粒子径が１．０μｍ以下であれば、研削等の加工が容易である。 The average primary particle size of the conductive material constituting the insulatinglayer 5 is preferably 0.1 μm or more and 1.0 μm or less, and more preferably 0.1 μm or more and 0.8 μm or less.
When the average primary particle diameter of the conductive material constituting the insulatinglayer 5 is 0.1 μm or more, sufficient withstand voltage resistance can be obtained. On the other hand, when the average primary particle diameter of the conductive material constituting the insulating layer 5 is 1.0 μm or less, processing such as grinding is easy.
絶縁層５を構成する導電性材料の平均一次粒子径が０．１μｍ以上であれば、充分な耐電圧性が得られる。一方、絶縁層５を構成する導電性材料の平均一次粒子径が１．０μｍ以下であれば、研削等の加工が容易である。 The average primary particle size of the conductive material constituting the insulating
When the average primary particle diameter of the conductive material constituting the insulating
絶縁層５を構成する絶縁性材料の平均一次粒子径及び導電性材料の平均一次粒子径の測定方法は、第１のセラミックス板２及び第２のセラミックス板３を構成する絶縁性材料の平均一次粒子径及び導電性材料の平均一次粒子径の測定方法と同様である。
The method of measuring the average primary particle diameter of the insulating material constituting the insulating layer 5 and the average primary particle diameter of the conductive material is as follows: the average primary of the insulating material constituting the first ceramic plate 2 and the second ceramic plate 3. The method for measuring the particle size and the average primary particle size of the conductive material is the same.
本実施形態のセラミックス接合体１によれば、セラミックス接合体１に帯電した電荷を、絶縁性材料と導電性材料から構成されるセラミックス板２，３から除電できる。さらに、上述したようにセラミックス接合体１では、電極層の外縁にボイドを形成しやすく、形成されたボイドに帯電しやすい。しかし、絶縁層５が絶縁性材料と導電性材料から構成されるため、セラミックス接合体１に高い電圧を印加した場合に、電極層４及び絶縁層５の接合界面に帯電した電荷を絶縁層５に除電できる。その結果、電極層４及び絶縁層５の接合界面の帯電を抑制でき、放電によるセラミックス接合体１の絶縁破壊を抑制できる。
According to the ceramic joint 1 of the present embodiment, the electric charge charged on the ceramic joint 1 can be eliminated from the ceramic plates 2 and 3 composed of the insulating material and the conductive material. Further, as described above, in the ceramics bonded body 1, voids are likely to be formed on the outer edge of the electrode layer, and the formed voids are likely to be charged. However, since the insulating layer 5 is composed of an insulating material and a conductive material, when a high voltage is applied to the ceramic joint 1, the electric charge charged at the bonding interface between the electrode layer 4 and the insulating layer 5 is applied to the insulating layer 5. Can be statically eliminated. As a result, the charging of the bonding interface between the electrode layer 4 and the insulating layer 5 can be suppressed, and the dielectric breakdown of the ceramic bonding body 1 due to the electric discharge can be suppressed.
［他の実施形態］
なお、本発明は、上記の実施形態に限定するものではない。 [Other embodiments]
The present invention is not limited to the above embodiment.
なお、本発明は、上記の実施形態に限定するものではない。 [Other embodiments]
The present invention is not limited to the above embodiment.
例えば、図２、図３に示すような変形例を採用してもよい。なお、変形例では、上記の実施形態における構成要素と同一の部分については同一の符号を付し、その説明を省略し、異なる点についてのみ説明する。
For example, a modified example as shown in FIGS. 2 and 3 may be adopted. In the modified example, the same parts as the components in the above embodiment are designated by the same reference numerals, the description thereof will be omitted, and only the different points will be described.
（変形例１）
図２に示す変形例のセラミックス接合体１０では、絶縁層５が、第２のセラミックス板３と一体的に形成されている。なお、本明細書において「一体的に形成されている」とは、１つの部材として形成されている（１つの部材である）ことを意味する。この意味において、本変形例の第２のセラミックス板３と絶縁層５とは、もともと２つの部材同士を１つに「一体化」した構成とは異なる。 (Modification 1)
In the modified ceramic joint 10 shown in FIG. 2, the insulatinglayer 5 is integrally formed with the second ceramic plate 3. In addition, in this specification, "integrally formed" means that it is formed as one member (it is one member). In this sense, the second ceramic plate 3 and the insulating layer 5 of this modification are different from the configuration in which the two members are originally "integrated" into one.
図２に示す変形例のセラミックス接合体１０では、絶縁層５が、第２のセラミックス板３と一体的に形成されている。なお、本明細書において「一体的に形成されている」とは、１つの部材として形成されている（１つの部材である）ことを意味する。この意味において、本変形例の第２のセラミックス板３と絶縁層５とは、もともと２つの部材同士を１つに「一体化」した構成とは異なる。 (Modification 1)
In the modified ceramic joint 10 shown in FIG. 2, the insulating
絶縁層５は、第２のセラミックス板３と同一の材料から構成されている。第２のセラミックス板３は、凹部３Ａを有しており、凹部３Ａの周囲には環状に絶縁層５が設けられている。第２のセラミックス板３の一部が絶縁層５に該当する。凹部３Ａは、凹部を有さないセラミックス板に研削加工又は研磨加工を施すことで形成可能である。
The insulating layer 5 is made of the same material as the second ceramic plate 3. The second ceramic plate 3 has a recess 3A, and an insulating layer 5 is provided in an annular shape around the recess 3A. A part of the second ceramic plate 3 corresponds to the insulating layer 5. The recess 3A can be formed by grinding or polishing a ceramic plate having no recess.
このようなセラミックス接合体１０では、電極層４と絶縁層５の接合界面に帯電した電荷をセラミックス板２及びセラミックス板３だけでなく、絶縁層５にも除電できる。その結果、電極層４及び絶縁層５の接合界面の帯電を抑制でき、放電によるセラミックス接合体１０の絶縁破壊を抑制できる。
In such a ceramic joint 10, the electric charge charged at the joint interface between the electrode layer 4 and the insulating layer 5 can be eliminated not only in the ceramic plate 2 and the ceramic plate 3 but also in the insulating layer 5. As a result, the charging of the bonding interface between the electrode layer 4 and the insulating layer 5 can be suppressed, and the dielectric breakdown of the ceramic bonding body 10 due to the electric discharge can be suppressed.
（変形例２）
図３に示す変形例のセラミックス接合体２０では、絶縁層５が、第１のセラミックス板２と一体的に形成されている。絶縁層５は、第１のセラミックス板２と同一の材料から構成されている。第１のセラミックス板２は、凹部２Ａを有しており、凹部２Ａの周囲には環状に絶縁層５が設けられている。第１のセラミックス板２の一部が絶縁層５に該当する。凹部２Ａは、凹部を有さないセラミックス板に研削加工又は研磨加工を施すことで形成可能である。
凹部２Ａの内側面は、Ｙ方向に平行であってもよく、Ｙ方向に対して傾きを有していてもよい。内側面がＹ方向に対して傾きを有する場合、凹部２Ａの開口径は、凹部２Ａの深さ方向に漸減する。 (Modification 2)
In the modified ceramic joint 20 shown in FIG. 3, the insulatinglayer 5 is integrally formed with the first ceramic plate 2. The insulating layer 5 is made of the same material as the first ceramic plate 2. The first ceramic plate 2 has a recess 2A, and an insulating layer 5 is provided in an annular shape around the recess 2A. A part of the first ceramic plate 2 corresponds to the insulating layer 5. The recess 2A can be formed by grinding or polishing a ceramic plate having no recess.
The inner surface of therecess 2A may be parallel to the Y direction or may have an inclination with respect to the Y direction. When the inner surface has an inclination with respect to the Y direction, the opening diameter of the recess 2A gradually decreases in the depth direction of the recess 2A.
図３に示す変形例のセラミックス接合体２０では、絶縁層５が、第１のセラミックス板２と一体的に形成されている。絶縁層５は、第１のセラミックス板２と同一の材料から構成されている。第１のセラミックス板２は、凹部２Ａを有しており、凹部２Ａの周囲には環状に絶縁層５が設けられている。第１のセラミックス板２の一部が絶縁層５に該当する。凹部２Ａは、凹部を有さないセラミックス板に研削加工又は研磨加工を施すことで形成可能である。
凹部２Ａの内側面は、Ｙ方向に平行であってもよく、Ｙ方向に対して傾きを有していてもよい。内側面がＹ方向に対して傾きを有する場合、凹部２Ａの開口径は、凹部２Ａの深さ方向に漸減する。 (Modification 2)
In the modified ceramic joint 20 shown in FIG. 3, the insulating
The inner surface of the
このようなセラミックス接合体２０では、電極層４と絶縁層５の接合界面に帯電した電荷をセラミックス板２及びセラミックス板３だけでなく、絶縁層５にも除電できる。その結果、電極層４及び絶縁層５の接合界面の帯電を抑制でき、放電によるセラミックス接合体２０の絶縁破壊を抑制できる。
In such a ceramic joint body 20, the electric charge charged at the joint interface between the electrode layer 4 and the insulating layer 5 can be eliminated not only in the ceramic plate 2 and the ceramic plate 3 but also in the insulating layer 5. As a result, the charging of the bonding interface between the electrode layer 4 and the insulating layer 5 can be suppressed, and the dielectric breakdown of the ceramic bonding body 20 due to the electric discharge can be suppressed.
［セラミックス接合体の製造方法］
本実施形態のセラミックス接合体の製造方法は、第１のセラミックス板の一方の面に、電極層形成用ペーストを塗布して電極層塗膜を形成するとともに、絶縁層形成用ペーストを塗布して絶縁層塗膜を形成する工程（以下、「第１の工程」と言う。）と、前記電極層塗膜及び前記絶縁層塗膜を形成した面が内側になる姿勢で、前記一対のセラミックス板を積層する工程（以下、「第２の工程」と言う。）と、前記一対のセラミックス板、前記電極層塗及び前記絶縁層塗膜を含む積層体を、加熱しながら、厚さ方向に加圧する工程（以下、「第３の工程」と言う。）と、を有する。 [Manufacturing method of ceramic joint]
In the method for manufacturing a ceramic bonded body of the present embodiment, an electrode layer forming paste is applied to one surface of a first ceramic plate to form an electrode layer coating film, and an insulating layer forming paste is applied to the surface. The pair of ceramic plates are in a posture in which the electrode layer coating film and the surface on which the insulating layer coating film is formed are on the inside in a step of forming the insulating layer coating film (hereinafter referred to as "first step"). (Hereinafter referred to as "second step") and the laminate including the pair of ceramic plates, the electrode layer coating film and the insulating layer coating film are added in the thickness direction while being heated. It has a step of pressing (hereinafter, referred to as a "third step").
本実施形態のセラミックス接合体の製造方法は、第１のセラミックス板の一方の面に、電極層形成用ペーストを塗布して電極層塗膜を形成するとともに、絶縁層形成用ペーストを塗布して絶縁層塗膜を形成する工程（以下、「第１の工程」と言う。）と、前記電極層塗膜及び前記絶縁層塗膜を形成した面が内側になる姿勢で、前記一対のセラミックス板を積層する工程（以下、「第２の工程」と言う。）と、前記一対のセラミックス板、前記電極層塗及び前記絶縁層塗膜を含む積層体を、加熱しながら、厚さ方向に加圧する工程（以下、「第３の工程」と言う。）と、を有する。 [Manufacturing method of ceramic joint]
In the method for manufacturing a ceramic bonded body of the present embodiment, an electrode layer forming paste is applied to one surface of a first ceramic plate to form an electrode layer coating film, and an insulating layer forming paste is applied to the surface. The pair of ceramic plates are in a posture in which the electrode layer coating film and the surface on which the insulating layer coating film is formed are on the inside in a step of forming the insulating layer coating film (hereinafter referred to as "first step"). (Hereinafter referred to as "second step") and the laminate including the pair of ceramic plates, the electrode layer coating film and the insulating layer coating film are added in the thickness direction while being heated. It has a step of pressing (hereinafter, referred to as a "third step").
以下、図１を参照しながら、本実施形態のセラミックス接合体の製造方法について説明する。
Hereinafter, the method for manufacturing the ceramic joint of the present embodiment will be described with reference to FIG. 1.
第１の工程では、スクリーン印刷法等の塗工法により、例えば、第１のセラミックス板２の一方の面２ａに電極層形成用ペーストを塗布し、電極層４となる塗膜（電極層塗膜）を形成する。
電極層形成用ペーストとしては、電極層４を形成する導電性材料の粒子、又は導電性材料の粒子と絶縁材料を、溶媒に分散させた分散液が用いられる。 In the first step, for example, a paste for forming an electrode layer is applied to onesurface 2a of the first ceramic plate 2 by a coating method such as a screen printing method to form a coating film (electrode layer coating film) to be the electrode layer 4. ) Is formed.
As the electrode layer forming paste, particles of the conductive material forming theelectrode layer 4 or a dispersion liquid in which particles of the conductive material and an insulating material are dispersed in a solvent is used.
電極層形成用ペーストとしては、電極層４を形成する導電性材料の粒子、又は導電性材料の粒子と絶縁材料を、溶媒に分散させた分散液が用いられる。 In the first step, for example, a paste for forming an electrode layer is applied to one
As the electrode layer forming paste, particles of the conductive material forming the
また、第１の工程では、スクリーン印刷法等の塗工法により、研磨加工を施した第１のセラミックス板２の一方の面２ａに絶縁層形成用ペーストを塗布し、絶縁層５となる塗膜（絶縁層塗膜）を形成する。
絶縁層形成用ペーストとしては、絶縁層５を形成する絶縁性材料及び導電性材料を、溶媒に分散させた分散液が用いられる。
絶縁層形成用ペースに含まれる溶媒としては、イソプロピルアルコール等が用いられる。 Further, in the first step, a coating film for forming an insulating layer is applied to onesurface 2a of the first ceramic plate 2 that has been polished by a coating method such as a screen printing method to form an insulating layer 5. (Insulating layer coating film) is formed.
As the paste for forming the insulating layer, a dispersion liquid in which the insulating material and the conductive material forming the insulatinglayer 5 are dispersed in a solvent is used.
Isopropyl alcohol or the like is used as the solvent contained in the pace for forming the insulating layer.
絶縁層形成用ペーストとしては、絶縁層５を形成する絶縁性材料及び導電性材料を、溶媒に分散させた分散液が用いられる。
絶縁層形成用ペースに含まれる溶媒としては、イソプロピルアルコール等が用いられる。 Further, in the first step, a coating film for forming an insulating layer is applied to one
As the paste for forming the insulating layer, a dispersion liquid in which the insulating material and the conductive material forming the insulating
Isopropyl alcohol or the like is used as the solvent contained in the pace for forming the insulating layer.
第２の工程では、電極層塗膜及び絶縁層塗膜を形成した面が内側になる姿勢で、第２のセラミックス板３の接合面３ａに、第１のセラミックス板２を積層する。
In the second step, the first ceramic plate 2 is laminated on the joint surface 3a of the second ceramic plate 3 in a posture in which the surface on which the electrode layer coating film and the insulating layer coating film are formed is on the inside.
第３の工程では、第１のセラミックス板２、電極層塗膜、絶縁層塗膜及び第２のセラミックス板３を含む積層体を、加熱しながら、厚さ方向に加圧する。
積層体を、加熱しながら、厚さ方向に加圧する際の雰囲気は、真空、あるいはＡｒ、Ｈｅ、Ｎ２等の不活性雰囲気が好ましい。 In the third step, the laminate including the firstceramic plate 2, the electrode layer coating film, the insulating layer coating film, and the second ceramic plate 3 is heated and pressed in the thickness direction.
The atmosphere when the laminate is heated and pressed in the thickness direction is preferably a vacuum or an inert atmosphere such as Ar, He, N 2 .
積層体を、加熱しながら、厚さ方向に加圧する際の雰囲気は、真空、あるいはＡｒ、Ｈｅ、Ｎ２等の不活性雰囲気が好ましい。 In the third step, the laminate including the first
The atmosphere when the laminate is heated and pressed in the thickness direction is preferably a vacuum or an inert atmosphere such as Ar, He, N 2 .
前記の積層体を加熱する温度（熱処理温度）は、１４００℃以上かつ１９００℃以下が好ましく、１５００℃以上かつ１８５０℃以下がより好ましい。
積層体を加熱する温度が１４００℃以上かつ１９００℃以下であれば、それぞれの塗膜に含まれる溶媒を揮発させて、第１のセラミックス板２と第２のセラミックス板３の間に、電極層４を形成できる。また、電極層４を介して、第１のセラミックス板２と第２のセラミックス板３を接合一体化することができる。 The temperature for heating the laminate (heat treatment temperature) is preferably 1400 ° C. or higher and 1900 ° C. or lower, more preferably 1500 ° C. or higher and 1850 ° C. or lower.
When the temperature for heating the laminate is 1400 ° C. or higher and 1900 ° C. or lower, the solvent contained in each coating film is volatilized, and an electrode layer is formed between the firstceramic plate 2 and the second ceramic plate 3. 4 can be formed. Further, the first ceramic plate 2 and the second ceramic plate 3 can be joined and integrated via the electrode layer 4.
積層体を加熱する温度が１４００℃以上かつ１９００℃以下であれば、それぞれの塗膜に含まれる溶媒を揮発させて、第１のセラミックス板２と第２のセラミックス板３の間に、電極層４を形成できる。また、電極層４を介して、第１のセラミックス板２と第２のセラミックス板３を接合一体化することができる。 The temperature for heating the laminate (heat treatment temperature) is preferably 1400 ° C. or higher and 1900 ° C. or lower, more preferably 1500 ° C. or higher and 1850 ° C. or lower.
When the temperature for heating the laminate is 1400 ° C. or higher and 1900 ° C. or lower, the solvent contained in each coating film is volatilized, and an electrode layer is formed between the first
前記の積層体を厚さ方向に加圧する圧力（加圧力）は、１．０ＭＰａ以上かつ５０．０ＭＰａ以下が好ましく、５．０ＭＰａ以上かつ２０．０ＭＰａ以下がより好ましい。
積層体を厚さ方向に加圧する圧力が１．０ＭＰａ以上かつ５０．０ＭＰａ以下であれば、第１のセラミックス板２と第２のセラミックス板３の間に、電極層４及び絶縁層５を形成できる。また、電極層４及び絶縁層５を介して、第１のセラミックス板２と第２のセラミックス板３を接合一体化することができる。 The pressure (pressurizing pressure) for pressurizing the laminate in the thickness direction is preferably 1.0 MPa or more and 50.0 MPa or less, and more preferably 5.0 MPa or more and 20.0 MPa or less.
When the pressure for pressurizing the laminate in the thickness direction is 1.0 MPa or more and 50.0 MPa or less, theelectrode layer 4 and the insulating layer 5 are formed between the first ceramic plate 2 and the second ceramic plate 3. can. Further, the first ceramic plate 2 and the second ceramic plate 3 can be joined and integrated via the electrode layer 4 and the insulating layer 5.
積層体を厚さ方向に加圧する圧力が１．０ＭＰａ以上かつ５０．０ＭＰａ以下であれば、第１のセラミックス板２と第２のセラミックス板３の間に、電極層４及び絶縁層５を形成できる。また、電極層４及び絶縁層５を介して、第１のセラミックス板２と第２のセラミックス板３を接合一体化することができる。 The pressure (pressurizing pressure) for pressurizing the laminate in the thickness direction is preferably 1.0 MPa or more and 50.0 MPa or less, and more preferably 5.0 MPa or more and 20.0 MPa or less.
When the pressure for pressurizing the laminate in the thickness direction is 1.0 MPa or more and 50.0 MPa or less, the
本実施形態のセラミックス接合体の製造方法によれば、絶縁層５が絶縁性材料と導電性材料から構成されたセラミックス接合体１を提供できる。得られるセラミックス接合体１は、高い電圧を印加した場合に、第１のセラミックス板２及び第２のセラミックス板３と絶縁層５の接合界面における放電を抑制でき、放電による絶縁破壊を抑制できる。
According to the method for manufacturing a ceramic joint of the present embodiment, it is possible to provide a ceramic joint 1 in which the insulating layer 5 is composed of an insulating material and a conductive material. When a high voltage is applied, the obtained ceramic joint 1 can suppress discharge at the junction interface between the first ceramic plate 2 and the second ceramic plate 3 and the insulating layer 5, and can suppress dielectric breakdown due to the discharge.
［静電チャック装置］
以下、図４を参照しながら、本発明の一実施形態に係る静電チャック装置について説明する。 [Electrostatic chuck device]
Hereinafter, the electrostatic chuck device according to the embodiment of the present invention will be described with reference to FIG.
以下、図４を参照しながら、本発明の一実施形態に係る静電チャック装置について説明する。 [Electrostatic chuck device]
Hereinafter, the electrostatic chuck device according to the embodiment of the present invention will be described with reference to FIG.
図４は、本実施形態の静電チャック装置を示す断面図である。なお、図４において、図１に示したセラミックス接合体と同一の構成には同一の符号を付して、重複する説明を省略する。
図４に示すように、本実施形態の静電チャック装置１００は、円板状の静電チャック部材１０２と、静電チャック部材１０２を所望の温度に調整する円板状の温度調整用ベース部材１０３と、これら静電チャック部材１０２及び温度調整用ベース部材１０３を接合・一体化する接着剤層１０４と、を有している。本実施形態の静電チャック装置１００では、静電チャック部材１０２が、例えば、上述の実施形態のセラミックス接合体１からなる。ここでは、静電チャック部材１０２がセラミックス接合体１からなる場合について説明する。
以下の説明においては、載置板１１１の載置面１１１ａ側を「上」、温度調整用ベース部材１０３側を「下」として記載し、各構成の相対位置を表すことがある。 FIG. 4 is a cross-sectional view showing the electrostatic chuck device of the present embodiment. In FIG. 4, the same components as those of the ceramic joint shown in FIG. 1 are designated by the same reference numerals, and duplicate description will be omitted.
As shown in FIG. 4, theelectrostatic chuck device 100 of the present embodiment includes a disk-shaped electrostatic chuck member 102 and a disk-shaped temperature adjusting base member that adjusts the electrostatic chuck member 102 to a desired temperature. It has a 103 and an adhesive layer 104 for joining and integrating the electrostatic chuck member 102 and the temperature adjusting base member 103. In the electrostatic chuck device 100 of the present embodiment, the electrostatic chuck member 102 is made of, for example, the ceramic joint 1 of the above-described embodiment. Here, a case where the electrostatic chuck member 102 is made of the ceramic joint 1 will be described.
In the following description, the mountingsurface 111a side of the mounting plate 111 may be described as "upper" and the temperature adjusting base member 103 side may be described as "lower" to represent the relative position of each configuration.
図４に示すように、本実施形態の静電チャック装置１００は、円板状の静電チャック部材１０２と、静電チャック部材１０２を所望の温度に調整する円板状の温度調整用ベース部材１０３と、これら静電チャック部材１０２及び温度調整用ベース部材１０３を接合・一体化する接着剤層１０４と、を有している。本実施形態の静電チャック装置１００では、静電チャック部材１０２が、例えば、上述の実施形態のセラミックス接合体１からなる。ここでは、静電チャック部材１０２がセラミックス接合体１からなる場合について説明する。
以下の説明においては、載置板１１１の載置面１１１ａ側を「上」、温度調整用ベース部材１０３側を「下」として記載し、各構成の相対位置を表すことがある。 FIG. 4 is a cross-sectional view showing the electrostatic chuck device of the present embodiment. In FIG. 4, the same components as those of the ceramic joint shown in FIG. 1 are designated by the same reference numerals, and duplicate description will be omitted.
As shown in FIG. 4, the
In the following description, the mounting
［静電チャック部材］
静電チャック部材１０２は、上面が半導体ウエハ等の板状試料を載置する載置面１１１ａとされたセラミックスからなる載置板１１１と、載置板１１１の載置面１１１ａとは反対の面側に設けられた支持板１１２と、これら載置板１１１と支持板１１２との間に挟持された静電吸着用電極１１３と、載置板１１１と支持板１１２とに挟持され静電吸着用電極１１３の周囲を囲む環状の絶縁材１１４と、温度調整用ベース部材１０３の固定孔１１５内に設けられ静電吸着用電極１１３に接する給電用端子１１６と、を有している。
静電チャック部材１０２において、載置板１１１が上記の第２のセラミックス板３に相当し、支持板１１２が上記の第１のセラミックス板２に相当し、静電吸着用電極１１３が上記の電極層４に相当し、絶縁材１１４が上記の絶縁層５に相当する。 [Electrostatic chuck member]
Theelectrostatic chuck member 102 has a mounting plate 111 whose upper surface is made of ceramics having a mounting surface 111a on which a plate-shaped sample such as a semiconductor wafer is mounted, and a surface opposite to the mounting surface 111a of the mounting plate 111. The support plate 112 provided on the side, the electrostatic adsorption electrode 113 sandwiched between the mounting plate 111 and the support plate 112, and the electrostatic adsorption electrode 113 sandwiched between the mounting plate 111 and the support plate 112 for electrostatic adsorption. It has an annular insulating material 114 that surrounds the periphery of the electrode 113, and a feeding terminal 116 that is provided in the fixing hole 115 of the temperature adjusting base member 103 and is in contact with the electrostatic adsorption electrode 113.
In theelectrostatic chuck member 102, the mounting plate 111 corresponds to the second ceramic plate 3, the support plate 112 corresponds to the first ceramic plate 2, and the electrostatic adsorption electrode 113 corresponds to the electrode. It corresponds to the layer 4, and the insulating material 114 corresponds to the above-mentioned insulating layer 5.
静電チャック部材１０２は、上面が半導体ウエハ等の板状試料を載置する載置面１１１ａとされたセラミックスからなる載置板１１１と、載置板１１１の載置面１１１ａとは反対の面側に設けられた支持板１１２と、これら載置板１１１と支持板１１２との間に挟持された静電吸着用電極１１３と、載置板１１１と支持板１１２とに挟持され静電吸着用電極１１３の周囲を囲む環状の絶縁材１１４と、温度調整用ベース部材１０３の固定孔１１５内に設けられ静電吸着用電極１１３に接する給電用端子１１６と、を有している。
静電チャック部材１０２において、載置板１１１が上記の第２のセラミックス板３に相当し、支持板１１２が上記の第１のセラミックス板２に相当し、静電吸着用電極１１３が上記の電極層４に相当し、絶縁材１１４が上記の絶縁層５に相当する。 [Electrostatic chuck member]
The
In the
［載置板］
載置板１１１の載置面１１１ａには、半導体ウエハ等の板状試料を支持するための多数の突起が立設され（図示略）ている。さらに、載置板１１１の載置面１１１ａの周縁部には、ヘリウム（Ｈｅ）等の冷却ガスが漏れないように、この周縁部を一周する、断面四角形状の環状突起部が設けられていてもよい。さらに、この載置面１１１ａ上の環状突起部に囲まれた領域には、環状突起部と高さが同一であり横断面が円形状かつ縦断面が略矩形状の複数の突起部が設けられていてもよい。 [Mounting board]
A large number of protrusions for supporting a plate-shaped sample such as a semiconductor wafer are erected on the mountingsurface 111a of the mounting plate 111 (not shown). Further, on the peripheral edge of the mounting surface 111a of the mounting plate 111, an annular protrusion having a square cross section is provided so as to go around the peripheral edge so that cooling gas such as helium (He) does not leak. May be good. Further, in the region surrounded by the annular protrusions on the mounting surface 111a, a plurality of protrusions having the same height as the annular protrusions, having a circular cross section and a substantially rectangular vertical cross section are provided. May be.
載置板１１１の載置面１１１ａには、半導体ウエハ等の板状試料を支持するための多数の突起が立設され（図示略）ている。さらに、載置板１１１の載置面１１１ａの周縁部には、ヘリウム（Ｈｅ）等の冷却ガスが漏れないように、この周縁部を一周する、断面四角形状の環状突起部が設けられていてもよい。さらに、この載置面１１１ａ上の環状突起部に囲まれた領域には、環状突起部と高さが同一であり横断面が円形状かつ縦断面が略矩形状の複数の突起部が設けられていてもよい。 [Mounting board]
A large number of protrusions for supporting a plate-shaped sample such as a semiconductor wafer are erected on the mounting
載置板１１１の厚さは、０．３ｍｍ以上かつ３．０ｍｍ以下が好ましく、０．５ｍｍ以上かつ１．５ｍｍ以下がより好ましい。載置板１１１の厚さが０．３ｍｍ以上であれば、耐電圧性に優れる。一方、載置板１１１の厚さが３．０ｍｍ以下であれば、静電チャック部材１０２の静電吸着力が低下することがなく、載置板１１１の載置面１１１ａに載置される板状試料と温度調整用ベース部材１０３との間の熱伝導性が低下することもなく、処理中の板状試料の温度を好ましい一定の温度に保つことができる。
The thickness of the mounting plate 111 is preferably 0.3 mm or more and 3.0 mm or less, and more preferably 0.5 mm or more and 1.5 mm or less. When the thickness of the mounting plate 111 is 0.3 mm or more, the withstand voltage resistance is excellent. On the other hand, if the thickness of the mounting plate 111 is 3.0 mm or less, the electrostatic attraction force of the electrostatic chuck member 102 does not decrease, and the plate is mounted on the mounting surface 111a of the mounting plate 111. The temperature of the plate-shaped sample being processed can be kept at a preferable constant temperature without deteriorating the thermal conductivity between the shaped sample and the temperature adjusting base member 103.
［支持板］
支持板１１２は、載置板１１１と静電吸着用電極１１３を下側から支持している。 [Support plate]
Thesupport plate 112 supports the mounting plate 111 and the electrostatic adsorption electrode 113 from below.
支持板１１２は、載置板１１１と静電吸着用電極１１３を下側から支持している。 [Support plate]
The
支持板１１２の厚さは、０．３ｍｍ以上かつ３．０ｍｍ以下が好ましく、０．５ｍｍ以上かつ１．５ｍｍ以下がより好ましい。支持板１１２の厚さが０．３ｍｍ以上であれば、充分な耐電圧を確保できる。一方、支持板１１２の厚さが３．０ｍｍ以下であれば、静電チャック部材１０２の静電吸着力が低下することがなく、載置板１１１の載置面１１１ａに載置される板状試料と温度調整用ベース部材１０３との間の熱伝導性が低下することもなく、処理中の板状試料の温度を好ましい一定の温度に保つことができる。
The thickness of the support plate 112 is preferably 0.3 mm or more and 3.0 mm or less, and more preferably 0.5 mm or more and 1.5 mm or less. If the thickness of the support plate 112 is 0.3 mm or more, a sufficient withstand voltage can be secured. On the other hand, if the thickness of the support plate 112 is 3.0 mm or less, the electrostatic attraction force of the electrostatic chuck member 102 does not decrease, and the plate shape is mounted on the mounting surface 111a of the mounting plate 111. The temperature of the plate-shaped sample being processed can be kept at a preferable constant temperature without deteriorating the thermal conductivity between the sample and the temperature adjusting base member 103.
［静電吸着用電極］
静電吸着用電極１１３では、電圧を印加することにより、載置板１１１の載置面１１１ａに板状試料を保持する静電吸着力が生じる。 [Electrode for electrostatic adsorption]
In theelectrostatic adsorption electrode 113, by applying a voltage, an electrostatic adsorption force for holding the plate-shaped sample is generated on the mounting surface 111a of the mounting plate 111.
静電吸着用電極１１３では、電圧を印加することにより、載置板１１１の載置面１１１ａに板状試料を保持する静電吸着力が生じる。 [Electrode for electrostatic adsorption]
In the
静電吸着用電極１１３の厚さは、５μｍ以上かつ２００μｍ以下が好ましく、１０μｍ以上かつ１００μｍ以下がより好ましい。静電吸着用電極１１３の厚さが５μｍ以上であれば、充分な導電性を確保できる。一方、静電吸着用電極１１３の厚さが２００μｍ以下であれば、載置板１１１の載置面１１１ａに載置される板状試料と温度調整用ベース部材１０３との間の熱伝導性が低下することがなく、処理中の板状試料の温度を望ましい一定の温度に保つことができる。また、プラズマ透過性が低下することがなく、安定にプラズマを発生させることができる。
The thickness of the electrostatic adsorption electrode 113 is preferably 5 μm or more and 200 μm or less, and more preferably 10 μm or more and 100 μm or less. When the thickness of the electrostatic adsorption electrode 113 is 5 μm or more, sufficient conductivity can be ensured. On the other hand, if the thickness of the electrostatic adsorption electrode 113 is 200 μm or less, the thermal conductivity between the plate-shaped sample mounted on the mounting surface 111a of the mounting plate 111 and the temperature adjusting base member 103 is high. The temperature of the plate-shaped sample being processed can be kept at a desired constant temperature without lowering. In addition, plasma permeability can be stably generated without deterioration.
［絶縁材］
絶縁材１１４は、静電吸着用電極１１３を囲繞して腐食性ガス及びそのプラズマから静電吸着用電極１１３を保護するための部材である。
絶縁材１１４により、載置板１１１と支持板１１２とが、静電吸着用電極１１３を介して接合一体化されている。 [Insulating material]
The insulatingmaterial 114 is a member that surrounds the electrostatic adsorption electrode 113 and protects the electrostatic adsorption electrode 113 from corrosive gas and its plasma.
The mountingplate 111 and the support plate 112 are joined and integrated via the electrostatic adsorption electrode 113 by the insulating material 114.
絶縁材１１４は、静電吸着用電極１１３を囲繞して腐食性ガス及びそのプラズマから静電吸着用電極１１３を保護するための部材である。
絶縁材１１４により、載置板１１１と支持板１１２とが、静電吸着用電極１１３を介して接合一体化されている。 [Insulating material]
The insulating
The mounting
［給電用端子］
給電用端子１１６は、静電吸着用電極１１３に電圧を印加するための部材である。
給電用端子１１６の数、形状等は、静電吸着用電極１１３の形態、すなわち単極型か、双極型かにより決定される。 [Power supply terminal]
Thepower feeding terminal 116 is a member for applying a voltage to the electrostatic adsorption electrode 113.
The number, shape, and the like of thepower feeding terminals 116 are determined by the form of the electrostatic adsorption electrode 113, that is, whether it is a unipolar type or a bipolar type.
給電用端子１１６は、静電吸着用電極１１３に電圧を印加するための部材である。
給電用端子１１６の数、形状等は、静電吸着用電極１１３の形態、すなわち単極型か、双極型かにより決定される。 [Power supply terminal]
The
The number, shape, and the like of the
給電用端子１１６の材料は、耐熱性に優れた導電性材料であれば特に制限されない。給電用端子１１６の材料としては、熱膨張係数が静電吸着用電極１１３及び支持板１１２の熱膨張係数に近似した材料が好ましく、例えば、コバール合金、ニオブ（Ｎｂ）等の金属材料、各種の導電性セラミックスが好適に用いられる。
The material of the power supply terminal 116 is not particularly limited as long as it is a conductive material having excellent heat resistance. As the material of the power feeding terminal 116, a material whose coefficient of thermal expansion is close to the coefficient of thermal expansion of the electrostatic adsorption electrode 113 and the support plate 112 is preferable, and for example, a metal material such as Koval alloy and niobium (Nb), and various types. Conductive ceramics are preferably used.
［導電性接着層］
導電性接着層１１７は、温度調整用ベース部材１０３の固定孔１１５内及び支持板１１２の貫通孔１１８内に設けられている。また、導電性接着層１１７は、静電吸着用電極１１３と給電用端子１１６の間に介在して、静電吸着用電極１１３と給電用端子１１６を電気的に接続している。 [Conductive adhesive layer]
The conductiveadhesive layer 117 is provided in the fixing hole 115 of the temperature adjusting base member 103 and in the through hole 118 of the support plate 112. Further, the conductive adhesive layer 117 is interposed between the electrostatic adsorption electrode 113 and the power supply terminal 116 to electrically connect the electrostatic adsorption electrode 113 and the power supply terminal 116.
導電性接着層１１７は、温度調整用ベース部材１０３の固定孔１１５内及び支持板１１２の貫通孔１１８内に設けられている。また、導電性接着層１１７は、静電吸着用電極１１３と給電用端子１１６の間に介在して、静電吸着用電極１１３と給電用端子１１６を電気的に接続している。 [Conductive adhesive layer]
The conductive
導電性接着層１１７を構成する導電性接着剤は、炭素繊維、金属粉等の導電性材料と樹脂を含む。
The conductive adhesive constituting the conductive adhesive layer 117 contains a conductive material such as carbon fiber and metal powder and a resin.
導電性接着剤に含まれる樹脂としては、熱応力により凝集破壊を起こし難い樹脂であれば特に限定されず、例えば、シリコーン樹脂、アクリル樹脂、エポシキ樹脂、フェノール樹脂、ポリウレタン樹脂、不飽和ポリエステル樹脂等が挙げられる。
これらの中でも、伸縮度が高く、熱応力の変化によって凝集破壊し難い点から、シリコーン樹脂が好ましい。 The resin contained in the conductive adhesive is not particularly limited as long as it is a resin that is unlikely to cause cohesive failure due to thermal stress, and for example, a silicone resin, an acrylic resin, an epoxy resin, a phenol resin, a polyurethane resin, an unsaturated polyester resin, or the like. Can be mentioned.
Among these, a silicone resin is preferable because it has a high degree of expansion and contraction and is unlikely to coagulate and fracture due to a change in thermal stress.
これらの中でも、伸縮度が高く、熱応力の変化によって凝集破壊し難い点から、シリコーン樹脂が好ましい。 The resin contained in the conductive adhesive is not particularly limited as long as it is a resin that is unlikely to cause cohesive failure due to thermal stress, and for example, a silicone resin, an acrylic resin, an epoxy resin, a phenol resin, a polyurethane resin, an unsaturated polyester resin, or the like. Can be mentioned.
Among these, a silicone resin is preferable because it has a high degree of expansion and contraction and is unlikely to coagulate and fracture due to a change in thermal stress.
［温度調整用ベース部材］
温度調整用ベース部材１０３は、金属及びセラミックスの少なくとも一方からなる厚みのある円板状の部材である。温度調整用ベース部材１０３の躯体は、プラズマ発生用内部電極を兼ねた構成とされている。温度調整用ベース部材１０３の躯体の内部には、水、Ｈｅガス、Ｎ２ガス等の冷却媒体を循環させる流路１２１が形成されている。 [Temperature control base member]
The temperaturecontrol base member 103 is a thick disk-shaped member made of at least one of metal and ceramics. The skeleton of the temperature control base member 103 is configured to also serve as an internal electrode for plasma generation. Inside the skeleton of the temperature control base member 103, a flow path 121 for circulating a cooling medium such as water, He gas, and N 2 gas is formed.
温度調整用ベース部材１０３は、金属及びセラミックスの少なくとも一方からなる厚みのある円板状の部材である。温度調整用ベース部材１０３の躯体は、プラズマ発生用内部電極を兼ねた構成とされている。温度調整用ベース部材１０３の躯体の内部には、水、Ｈｅガス、Ｎ２ガス等の冷却媒体を循環させる流路１２１が形成されている。 [Temperature control base member]
The temperature
温度調整用ベース部材１０３の躯体は、外部の高周波電源１２２に接続されている。また、温度調整用ベース部材１０３の固定孔１１５内には、その外周が絶縁材料１２３により囲繞された給電用端子１１６が、絶縁材料１２３を介して固定されている。給電用端子１１６は、外部の直流電源１２４に接続されている。
The skeleton of the temperature control base member 103 is connected to the external high frequency power supply 122. Further, in the fixing hole 115 of the temperature adjusting base member 103, a power feeding terminal 116 whose outer periphery is surrounded by the insulating material 123 is fixed via the insulating material 123. The power supply terminal 116 is connected to an external DC power supply 124.
温度調整用ベース部材１０３を構成する材料は、熱伝導性、導電性、加工性に優れた金属、又はこれらの金属を含む複合材であれば特に制限されない。温度調整用ベース部材１０３を構成する材料としては、例えば、アルミニウム（Ａｌ）、銅（Ｃｕ）、ステンレス鋼（ＳＵＳ）、チタン（Ｔｉ）等が好適に用いられる。
The material constituting the temperature control base member 103 is not particularly limited as long as it is a metal having excellent thermal conductivity, conductivity, and workability, or a composite material containing these metals. As the material constituting the temperature control base member 103, for example, aluminum (Al), copper (Cu), stainless steel (SUS), titanium (Ti) and the like are preferably used.
温度調整用ベース部材１０３における少なくともプラズマに曝される面は、アルマイト処理又はポリイミド系樹脂による樹脂コーティングが施されていることが好ましい。また、温度調整用ベース部材１０３の全面が、前記のアルマイト処理又は樹脂コーティングが施されていることがより好ましい。
It is preferable that at least the surface of the temperature control base member 103 exposed to plasma is anodized or resin-coated with a polyimide resin. Further, it is more preferable that the entire surface of the temperature adjusting base member 103 is subjected to the above-mentioned alumite treatment or resin coating.
温度調整用ベース部材１０３にアルマイト処理又は樹脂コーティングを施すことにより、温度調整用ベース部材１０３の耐プラズマ性が向上するとともに、異常放電が防止される。したがって、温度調整用ベース部材１０３の耐プラズマ安定性が向上し、また、温度調整用ベース部材１０３の表面傷の発生も防止できる。
By applying alumite treatment or resin coating to the temperature control base member 103, the plasma resistance of the temperature control base member 103 is improved and abnormal discharge is prevented. Therefore, the plasma resistance stability of the temperature adjusting base member 103 is improved, and the occurrence of surface scratches on the temperature adjusting base member 103 can be prevented.
［接着剤層］
接着剤層１０４は、静電チャック部材１０２と、温度調整用ベース部材１０３とを接着一体化する構成である。 [Adhesive layer]
Theadhesive layer 104 has a structure in which the electrostatic chuck member 102 and the temperature adjusting base member 103 are bonded and integrated.
接着剤層１０４は、静電チャック部材１０２と、温度調整用ベース部材１０３とを接着一体化する構成である。 [Adhesive layer]
The
接着剤層１０４の厚さは、１００μｍ以上かつ２００μｍ以下が好ましく、１３０μｍ以上かつ１７０μｍ以下がより好ましい。
接着剤層１０４の厚さが上記の範囲内であれば、静電チャック部材１０２と温度調整用ベース部材１０３との間の接着強度を充分に保持できる。また、静電チャック部材１０２と温度調整用ベース部材１０３との間の熱伝導性を充分に確保できる。 The thickness of theadhesive layer 104 is preferably 100 μm or more and 200 μm or less, and more preferably 130 μm or more and 170 μm or less.
When the thickness of theadhesive layer 104 is within the above range, the adhesive strength between the electrostatic chuck member 102 and the temperature adjusting base member 103 can be sufficiently maintained. Further, sufficient thermal conductivity can be ensured between the electrostatic chuck member 102 and the temperature adjusting base member 103.
接着剤層１０４の厚さが上記の範囲内であれば、静電チャック部材１０２と温度調整用ベース部材１０３との間の接着強度を充分に保持できる。また、静電チャック部材１０２と温度調整用ベース部材１０３との間の熱伝導性を充分に確保できる。 The thickness of the
When the thickness of the
接着剤層１０４は、例えば、シリコーン系樹脂組成物を加熱硬化した硬化体、アクリル樹脂、エポキシ樹脂等で形成されている。
シリコーン系樹脂組成物は、シロキサン結合（Ｓｉ－Ｏ－Ｓｉ）を有するケイ素化合物であり、耐熱性、弾性に優れた樹脂であるので、より好ましい。 Theadhesive layer 104 is formed of, for example, a cured product obtained by heat-curing a silicone-based resin composition, an acrylic resin, an epoxy resin, or the like.
The silicone-based resin composition is a silicon compound having a siloxane bond (Si—O—Si), and is more preferable because it is a resin having excellent heat resistance and elasticity.
シリコーン系樹脂組成物は、シロキサン結合（Ｓｉ－Ｏ－Ｓｉ）を有するケイ素化合物であり、耐熱性、弾性に優れた樹脂であるので、より好ましい。 The
The silicone-based resin composition is a silicon compound having a siloxane bond (Si—O—Si), and is more preferable because it is a resin having excellent heat resistance and elasticity.
このようなシリコーン系樹脂組成物としては、特に、熱硬化温度が７０℃～１４０℃のシリコーン樹脂が好ましい。
As such a silicone-based resin composition, a silicone resin having a thermosetting temperature of 70 ° C. to 140 ° C. is particularly preferable.
ここで、熱硬化温度が７０℃を下回ると、静電チャック部材１０２と温度調整用ベース部材１０３とを対向させた状態で接合する際に、接合過程で硬化が充分に進まず、作業性に劣るため好ましくない。一方、熱硬化温度が１４０℃を超えると、静電チャック部材１０２及び温度調整用ベース部材１０３との熱膨張差が大きく、静電チャック部材１０２と温度調整用ベース部材１０３との間の応力が増加し、これらの間で剥離が生じることがあるため好ましくない。
Here, when the thermosetting temperature is lower than 70 ° C., when the electrostatic chuck member 102 and the temperature adjusting base member 103 are joined in a state of facing each other, the curing does not proceed sufficiently in the joining process, and the workability is improved. Not preferable because it is inferior. On the other hand, when the thermal curing temperature exceeds 140 ° C., the difference in thermal expansion between the electrostatic chuck member 102 and the temperature adjusting base member 103 is large, and the stress between the electrostatic chuck member 102 and the temperature adjusting base member 103 increases. It is not preferable because it increases and peeling may occur between them.
すなわち、熱硬化温度が７０℃以上であると、接合過程で作業性に優れ、熱硬化温度が１４０℃以下であると、静電チャック部材１０２と温度調整用ベース部材１０３との間で剥離し難いため好ましい。
That is, when the thermosetting temperature is 70 ° C. or higher, workability is excellent in the joining process, and when the thermosetting temperature is 140 ° C. or lower, the electrostatic chuck member 102 and the temperature adjusting base member 103 are separated from each other. It is preferable because it is difficult.
本実施形態の静電チャック装置１００によれば、静電チャック部材１０２がセラミックス接合体１からなるため、静電チャック部材１０２において、絶縁破壊（放電）の発生を抑制できる。
According to the electrostatic chuck device 100 of the present embodiment, since the electrostatic chuck member 102 is made of the ceramic junction 1, it is possible to suppress the occurrence of dielectric breakdown (discharge) in the electrostatic chuck member 102.
以下、本実施形態の静電チャック装置の製造方法について説明する。
Hereinafter, a method for manufacturing the electrostatic chuck device of the present embodiment will be described.
上述のようにして得られたセラミックス接合体１からなる静電チャック部材１０２を用意する。
Prepare an electrostatic chuck member 102 made of the ceramic joint 1 obtained as described above.
温度調整用ベース部材１０３の一主面１０３ａの所定領域に、シリコーン系樹脂組成物からなる接着剤を塗布する。ここで、接着剤の塗布量を、静電チャック部材１０２と温度調整用ベース部材１０３とが接合一体化できる量に調整する。
この接着剤の塗布方法としては、ヘラ等を用いて手動で塗布する他、バーコート法、スクリーン印刷法等が挙げられる。 An adhesive made of a silicone-based resin composition is applied to a predetermined region of onemain surface 103a of the temperature adjusting base member 103. Here, the amount of the adhesive applied is adjusted to an amount that allows the electrostatic chuck member 102 and the temperature adjusting base member 103 to be joined and integrated.
Examples of the method for applying this adhesive include a bar coating method, a screen printing method, and the like, in addition to manually applying the adhesive using a spatula or the like.
この接着剤の塗布方法としては、ヘラ等を用いて手動で塗布する他、バーコート法、スクリーン印刷法等が挙げられる。 An adhesive made of a silicone-based resin composition is applied to a predetermined region of one
Examples of the method for applying this adhesive include a bar coating method, a screen printing method, and the like, in addition to manually applying the adhesive using a spatula or the like.
温度調整用ベース部材１０３の一主面１０３ａに接着剤を塗布した後、静電チャック部材１０２と、接着剤を塗布した温度調整用ベース部材１０３とを重ね合わせる。
また、立設した給電用端子１１６を、温度調整用ベース部材１０３中に穿孔された固定孔１１５に挿入し嵌め込む。
次いで、静電チャック部材１０２を温度調整用ベース部材１０３に対して所定の圧力にて押圧し、静電チャック部材１０２と温度調整用ベース部材１０３を接合一体化する。これにより、静電チャック部材１０２と温度調整用ベース部材１０３は、接着剤層１０４を介して接合一体化される。 After applying the adhesive to onemain surface 103a of the temperature adjusting base member 103, the electrostatic chuck member 102 and the temperature adjusting base member 103 coated with the adhesive are overlapped with each other.
Further, the standingpower feeding terminal 116 is inserted into the fixing hole 115 formed in the temperature adjusting base member 103 and fitted.
Next, theelectrostatic chuck member 102 is pressed against the temperature adjusting base member 103 with a predetermined pressure, and the electrostatic chuck member 102 and the temperature adjusting base member 103 are joined and integrated. As a result, the electrostatic chuck member 102 and the temperature adjusting base member 103 are joined and integrated via the adhesive layer 104.
また、立設した給電用端子１１６を、温度調整用ベース部材１０３中に穿孔された固定孔１１５に挿入し嵌め込む。
次いで、静電チャック部材１０２を温度調整用ベース部材１０３に対して所定の圧力にて押圧し、静電チャック部材１０２と温度調整用ベース部材１０３を接合一体化する。これにより、静電チャック部材１０２と温度調整用ベース部材１０３は、接着剤層１０４を介して接合一体化される。 After applying the adhesive to one
Further, the standing
Next, the
以上により、静電チャック部材１０２及び温度調整用ベース部材１０３は、接着剤層１０４を介して接合一体化された本実施形態の静電チャック装置１００が得られる。
As described above, the electrostatic chuck device 100 of the present embodiment is obtained in which the electrostatic chuck member 102 and the temperature adjusting base member 103 are joined and integrated via the adhesive layer 104.
なお、本実施形態に係る板状試料としては、半導体ウエハに限らず、例えば、液晶ディスプレイ（ＬＣＤ）、プラズマディスプレイ（ＰＤＰ）、有機ＥＬディスプレイ等の平板型ディスプレイ（ＦＰＤ）用ガラス基板等であってもよい。また、その基板の形状や大きさに合わせて本実施形態の静電チャック装置を設計すればよい。
The plate-shaped sample according to the present embodiment is not limited to a semiconductor wafer, but may be, for example, a glass substrate for a flat plate display (FPD) such as a liquid crystal display (LCD), a plasma display (PDP), or an organic EL display. You may. Further, the electrostatic chuck device of the present embodiment may be designed according to the shape and size of the substrate.
本発明は、以下の態様も包含する。
The present invention also includes the following aspects.
［１－１］一対のセラミックス板と、前記一対のセラミックス板の間に介在する電極層と、前記一対のセラミックス板の間において、前記電極層の周囲に配置された絶縁層と、を備え、前記一対のセラミックス板が、それぞれ絶縁性材料と導電性材料とから構成され、前記絶縁層は、絶縁性材料と導電性材料から構成され、前記電極層は、導電性材料の粒子の焼結体、又は絶縁性セラミックスの粒子と導電性材料の粒子との焼結体からなる、セラミックス接合体。
[1-1] The pair of ceramic plates comprises a pair of ceramic plates, an electrode layer interposed between the pair of ceramic plates, and an insulating layer arranged around the electrode layer between the pair of ceramic plates. The plate is composed of an insulating material and a conductive material, respectively, the insulating layer is composed of an insulating material and a conductive material, and the electrode layer is a sintered body of particles of the conductive material or an insulating material. A ceramic junction made of a sintered body of ceramic particles and particles of a conductive material.
［１－２］前記一対のセラミックス板の材料が、互いに同じである［１－１］に記載のセラミックス接合体。
[1-2] The ceramic joint according to [1-1], wherein the materials of the pair of ceramic plates are the same as each other.
［１－３］下記方法で求められる前記電極層の外縁の相対密度は、前記電極層の中心の相対密度よりも低い［１－２］に記載のセラミックス接合体。
（相対密度の測定方法）
前記セラミックス接合体の厚さ方向の切断面において、前記電極層の外縁の端部から電極層の内側に向けて１５０μｍの範囲の、拡大倍率１０００倍の顕微鏡写真を撮像する。前記範囲に含まれる電極層の外輪郭内の面積に対する、物質が存在する領域の割合を電極層の外縁の相対密度とする。
前記切断面において、電極層の中央を含む幅１５０μｍの範囲の、拡大倍率１０００倍の顕微鏡写真を撮像する。前記範囲に含まれる電極層の外輪郭内の面積に対する、物質が存在する領域の割合を電極層の中央の相対密度とする。 [1-3] The ceramic junction according to [1-2], wherein the relative density of the outer edge of the electrode layer obtained by the following method is lower than the relative density of the center of the electrode layer.
(Measurement method of relative density)
On the cut surface in the thickness direction of the ceramic joint, a micrograph with a magnification of 1000 times is taken in the range of 150 μm from the end of the outer edge of the electrode layer toward the inside of the electrode layer. The ratio of the region where the substance is present to the area in the outer contour of the electrode layer included in the above range is defined as the relative density of the outer edge of the electrode layer.
On the cut surface, a micrograph having a width of 150 μm including the center of the electrode layer and a magnification of 1000 times is taken. The ratio of the region where the substance is present to the area in the outer contour of the electrode layer included in the above range is defined as the relative density at the center of the electrode layer.
（相対密度の測定方法）
前記セラミックス接合体の厚さ方向の切断面において、前記電極層の外縁の端部から電極層の内側に向けて１５０μｍの範囲の、拡大倍率１０００倍の顕微鏡写真を撮像する。前記範囲に含まれる電極層の外輪郭内の面積に対する、物質が存在する領域の割合を電極層の外縁の相対密度とする。
前記切断面において、電極層の中央を含む幅１５０μｍの範囲の、拡大倍率１０００倍の顕微鏡写真を撮像する。前記範囲に含まれる電極層の外輪郭内の面積に対する、物質が存在する領域の割合を電極層の中央の相対密度とする。 [1-3] The ceramic junction according to [1-2], wherein the relative density of the outer edge of the electrode layer obtained by the following method is lower than the relative density of the center of the electrode layer.
(Measurement method of relative density)
On the cut surface in the thickness direction of the ceramic joint, a micrograph with a magnification of 1000 times is taken in the range of 150 μm from the end of the outer edge of the electrode layer toward the inside of the electrode layer. The ratio of the region where the substance is present to the area in the outer contour of the electrode layer included in the above range is defined as the relative density of the outer edge of the electrode layer.
On the cut surface, a micrograph having a width of 150 μm including the center of the electrode layer and a magnification of 1000 times is taken. The ratio of the region where the substance is present to the area in the outer contour of the electrode layer included in the above range is defined as the relative density at the center of the electrode layer.
［２－１］一対のセラミックス板と、前記一対のセラミックス板の間に介在する電極層と、前記一対のセラミックス板の間において、前記電極層の周囲に配置された絶縁層と、を備え、前記一対のセラミックス板が、それぞれ絶縁性材料と導電性材料とから構成され、前記絶縁層は、絶縁性材料と導電性材料から構成され、前記一対のセラミックス板の一方と一体化されており、前記電極層は、導電性材料の粒子の焼結体、又は絶縁性セラミックスの粒子と導電性材料の粒子との焼結体からなる、セラミックス接合体。
[2-1] The pair of ceramic plates comprises a pair of ceramic plates, an electrode layer interposed between the pair of ceramic plates, and an insulating layer arranged around the electrode layer between the pair of ceramic plates. The plate is composed of an insulating material and a conductive material, respectively, and the insulating layer is composed of an insulating material and a conductive material, and is integrated with one of the pair of ceramic plates. , A ceramic joint composed of a sintered body of particles of a conductive material or a sintered body of particles of an insulating ceramic and particles of a conductive material.
［２－２］前記一対のセラミックス板の材料が、互いに同じである［２－１］に記載のセラミックス接合体。
[2-2] The ceramic joint according to [2-1], wherein the materials of the pair of ceramic plates are the same as each other.
［２－３］下記方法で求められる前記電極層の外縁の相対密度は、前記電極層の中心の相対密度よりも低い［２－２］に記載のセラミックス接合体。
（相対密度の測定方法）
前記セラミックス接合体の厚さ方向の切断面において、前記電極層の外縁の端部から電極層の内側に向けて１５０μｍの範囲の、拡大倍率１０００倍の顕微鏡写真を撮像する。前記範囲に含まれる電極層の外輪郭内の面積に対する、物質が存在する領域の割合を電極層の外縁の相対密度とする。
前記切断面において、電極層の中央を含む幅１５０μｍの範囲の、拡大倍率１０００倍の顕微鏡写真を撮像する。前記範囲に含まれる電極層の外輪郭内の面積に対する、物質が存在する領域の割合を電極層の中央の相対密度とする。 [2-3] The ceramic junction according to [2-2], wherein the relative density of the outer edge of the electrode layer obtained by the following method is lower than the relative density of the center of the electrode layer.
(Measurement method of relative density)
On the cut surface in the thickness direction of the ceramic joint, a micrograph with a magnification of 1000 times is taken in the range of 150 μm from the end of the outer edge of the electrode layer toward the inside of the electrode layer. The ratio of the region where the substance is present to the area in the outer contour of the electrode layer included in the above range is defined as the relative density of the outer edge of the electrode layer.
On the cut surface, a micrograph having a width of 150 μm including the center of the electrode layer and a magnification of 1000 times is taken. The ratio of the region where the substance is present to the area in the outer contour of the electrode layer included in the above range is defined as the relative density at the center of the electrode layer.
（相対密度の測定方法）
前記セラミックス接合体の厚さ方向の切断面において、前記電極層の外縁の端部から電極層の内側に向けて１５０μｍの範囲の、拡大倍率１０００倍の顕微鏡写真を撮像する。前記範囲に含まれる電極層の外輪郭内の面積に対する、物質が存在する領域の割合を電極層の外縁の相対密度とする。
前記切断面において、電極層の中央を含む幅１５０μｍの範囲の、拡大倍率１０００倍の顕微鏡写真を撮像する。前記範囲に含まれる電極層の外輪郭内の面積に対する、物質が存在する領域の割合を電極層の中央の相対密度とする。 [2-3] The ceramic junction according to [2-2], wherein the relative density of the outer edge of the electrode layer obtained by the following method is lower than the relative density of the center of the electrode layer.
(Measurement method of relative density)
On the cut surface in the thickness direction of the ceramic joint, a micrograph with a magnification of 1000 times is taken in the range of 150 μm from the end of the outer edge of the electrode layer toward the inside of the electrode layer. The ratio of the region where the substance is present to the area in the outer contour of the electrode layer included in the above range is defined as the relative density of the outer edge of the electrode layer.
On the cut surface, a micrograph having a width of 150 μm including the center of the electrode layer and a magnification of 1000 times is taken. The ratio of the region where the substance is present to the area in the outer contour of the electrode layer included in the above range is defined as the relative density at the center of the electrode layer.
以下、実施例及び比較例により本発明をさらに具体的に説明するが、本発明は以下の実施例に限定されるものではない。
Hereinafter, the present invention will be described in more detail with reference to Examples and Comparative Examples, but the present invention is not limited to the following Examples.
［実施例１］
９１質量％の酸化アルミニウム粉末（粒子）と、９質量％の炭化ケイ素粉末（粒子）との混合粉末を成型、焼結し、直径４５０ｍｍ、厚さ５．０ｍｍの円盤状の酸化アルミニウム－炭化ケイ素複合焼結体からなるセラミックス板（第１のセラミックス板、第２のセラミックス板）を作製した。 [Example 1]
A mixed powder of 91% by mass of aluminum oxide powder (particles) and 9% by mass of silicon carbide powder (particles) is molded and sintered, and a disk-shaped aluminum oxide-silicon carbide having a diameter of 450 mm and a thickness of 5.0 mm is formed. Ceramic plates (first ceramic plate, second ceramic plate) made of a composite sintered body were produced.
９１質量％の酸化アルミニウム粉末（粒子）と、９質量％の炭化ケイ素粉末（粒子）との混合粉末を成型、焼結し、直径４５０ｍｍ、厚さ５．０ｍｍの円盤状の酸化アルミニウム－炭化ケイ素複合焼結体からなるセラミックス板（第１のセラミックス板、第２のセラミックス板）を作製した。 [Example 1]
A mixed powder of 91% by mass of aluminum oxide powder (particles) and 9% by mass of silicon carbide powder (particles) is molded and sintered, and a disk-shaped aluminum oxide-silicon carbide having a diameter of 450 mm and a thickness of 5.0 mm is formed. Ceramic plates (first ceramic plate, second ceramic plate) made of a composite sintered body were produced.
次いで、スクリーン印刷法により、第１のセラミックス板の一方の面に、導電性材料を含む電極層形成用ペーストを塗布し、電極層塗膜を形成した。
Next, an electrode layer forming paste containing a conductive material was applied to one surface of the first ceramic plate by a screen printing method to form an electrode layer coating film.
電極層形成用ペーストとしては、酸化アルミニウム粉末と炭化モリブデン粉末を、イソプロピルアルコールに分散させた分散液を用いた。電極層形成用ペーストにおける酸化アルミニウム粉末の含有量を２５質量％とし、炭化モリブデン粉末の含有量を２５質量％とした。
As the electrode layer forming paste, a dispersion liquid in which aluminum oxide powder and molybdenum carbide powder were dispersed in isopropyl alcohol was used. The content of the aluminum oxide powder in the paste for forming the electrode layer was 25% by mass, and the content of the molybdenum carbide powder was 25% by mass.
また、スクリーン印刷法により、第１のセラミックス板の一方の面に、絶縁性材料と導電性材料を含む絶縁層形成用ペーストを塗布し、絶縁層塗膜を形成した。
絶縁層形成用ペーストとしては、酸化アルミニウム粉末と炭化ケイ素粉末を、イソプロピルアルコールに分散させた分散液を用いた。絶縁層形成用ペーストにおける酸化アルミニウム粉末の含有量を５５質量％とし、炭化ケイ素粉末の含有量を５質量％とした。 Further, by a screen printing method, an insulating layer forming paste containing an insulating material and a conductive material was applied to one surface of the first ceramic plate to form an insulating layer coating film.
As the paste for forming the insulating layer, a dispersion liquid in which aluminum oxide powder and silicon carbide powder were dispersed in isopropyl alcohol was used. The content of the aluminum oxide powder in the paste for forming the insulating layer was 55% by mass, and the content of the silicon carbide powder was 5% by mass.
絶縁層形成用ペーストとしては、酸化アルミニウム粉末と炭化ケイ素粉末を、イソプロピルアルコールに分散させた分散液を用いた。絶縁層形成用ペーストにおける酸化アルミニウム粉末の含有量を５５質量％とし、炭化ケイ素粉末の含有量を５質量％とした。 Further, by a screen printing method, an insulating layer forming paste containing an insulating material and a conductive material was applied to one surface of the first ceramic plate to form an insulating layer coating film.
As the paste for forming the insulating layer, a dispersion liquid in which aluminum oxide powder and silicon carbide powder were dispersed in isopropyl alcohol was used. The content of the aluminum oxide powder in the paste for forming the insulating layer was 55% by mass, and the content of the silicon carbide powder was 5% by mass.
次いで、電極層塗膜及び絶縁層塗膜を形成した面が内側になる姿勢で、第２のセラミックス板の接合面に、第１のセラミックス板を積層した。
Next, the first ceramic plate was laminated on the joint surface of the second ceramic plate with the surface on which the electrode layer coating film and the insulating layer coating film were formed facing inside.
次いで、第１のセラミックス板、電極層塗膜、絶縁層塗膜及び第２のセラミックス板を含む積層体を、アルゴン雰囲気下、加熱しながら、厚さ方向に加圧した。熱処理温度を１７００℃、加圧力を１０ＭＰａ、熱処理及び加圧する時間を２時間とした。
以上の工程により、図１に示すような実施例１のセラミックス接合体を得た。 Next, the laminate containing the first ceramic plate, the electrode layer coating film, the insulating layer coating film, and the second ceramic plate was pressurized in the thickness direction while heating under an argon atmosphere. The heat treatment temperature was 1700 ° C., the pressing force was 10 MPa, and the heat treatment and pressurizing time was 2 hours.
Through the above steps, the ceramic joint of Example 1 as shown in FIG. 1 was obtained.
以上の工程により、図１に示すような実施例１のセラミックス接合体を得た。 Next, the laminate containing the first ceramic plate, the electrode layer coating film, the insulating layer coating film, and the second ceramic plate was pressurized in the thickness direction while heating under an argon atmosphere. The heat treatment temperature was 1700 ° C., the pressing force was 10 MPa, and the heat treatment and pressurizing time was 2 hours.
Through the above steps, the ceramic joint of Example 1 as shown in FIG. 1 was obtained.
（絶縁性評価）
以下のようにして、セラミックス接合体の絶縁性を評価した。
セラミックス接合体の側面（セラミックス接合体の厚さ方向の側面）において、第１のセラミックス板、絶縁層及び第２のセラミックス板に接する姿勢でカーボンテープを貼付した。 (Insulation evaluation)
The insulation of the ceramic joint was evaluated as follows.
On the side surface of the ceramic joint (side surface in the thickness direction of the ceramic joint), the carbon tape was attached in a posture in contact with the first ceramic plate, the insulating layer and the second ceramic plate.
以下のようにして、セラミックス接合体の絶縁性を評価した。
セラミックス接合体の側面（セラミックス接合体の厚さ方向の側面）において、第１のセラミックス板、絶縁層及び第２のセラミックス板に接する姿勢でカーボンテープを貼付した。 (Insulation evaluation)
The insulation of the ceramic joint was evaluated as follows.
On the side surface of the ceramic joint (side surface in the thickness direction of the ceramic joint), the carbon tape was attached in a posture in contact with the first ceramic plate, the insulating layer and the second ceramic plate.
第１のセラミックス板を、その厚さ方向に貫通し、第１のセラミックス板の電極層と接する面とは反対側の面から電極層に至る貫通電極を形成した。
A through electrode was formed by penetrating the first ceramic plate in the thickness direction from the surface opposite to the surface of the first ceramic plate in contact with the electrode layer to the electrode layer.
カーボンテープと貫通電極を介して、セラミックス接合体に電圧を印加し、セラミックス接合体が絶縁破壊する電圧を測定した。具体的には、３０００Ｖの電圧を印加した状態でＲＦ電圧を印加し１０分保持し、その後５００Ｖずつ徐々に電圧を印加して、１０分保持し、測定した電流値が０．１ｍＡ（ミリアンペア）を超えたところを絶縁破壊とした。結果を表１に示す。
A voltage was applied to the ceramic joint via the carbon tape and the through electrode, and the voltage at which the ceramic joint breaks down was measured. Specifically, with a voltage of 3000 V applied, an RF voltage was applied and held for 10 minutes, then a voltage of 500 V was gradually applied and held for 10 minutes, and the measured current value was 0.1 mA (milliampere). The place beyond the above was regarded as dielectric breakdown. The results are shown in Table 1.
［比較例］
絶縁性材料のみを含む絶縁層形成用ペーストを塗布し、絶縁層塗膜を形成したこと以外は、実施例１と同様にして、比較例のセラミックス接合体を得た。
実施例１と同様にして、セラミックス接合体の絶縁性を評価した。結果を表１に示す。 [Comparison example]
A ceramic bonded body of Comparative Example was obtained in the same manner as in Example 1 except that the insulating layer forming paste containing only the insulating material was applied to form the insulating layer coating film.
The insulating property of the ceramic joint was evaluated in the same manner as in Example 1. The results are shown in Table 1.
絶縁性材料のみを含む絶縁層形成用ペーストを塗布し、絶縁層塗膜を形成したこと以外は、実施例１と同様にして、比較例のセラミックス接合体を得た。
実施例１と同様にして、セラミックス接合体の絶縁性を評価した。結果を表１に示す。 [Comparison example]
A ceramic bonded body of Comparative Example was obtained in the same manner as in Example 1 except that the insulating layer forming paste containing only the insulating material was applied to form the insulating layer coating film.
The insulating property of the ceramic joint was evaluated in the same manner as in Example 1. The results are shown in Table 1.
表１の結果から、実施例１のセラミックス接合体は、比較例のセラミックス接合体よりも絶縁耐圧が高いことが分かった。
From the results in Table 1, it was found that the ceramic joint of Example 1 had a higher dielectric strength than the ceramic joint of Comparative Example.
［実施例２］
第１のセラミックス板の一方の面（第２のセラミックス板との接合面）に研削加工を施して、第１のセラミックス板の一方の面に、第１のセラミックス板の厚さ方向に対して傾く傾斜面を有する凹部を形成した。形成した凹部は、第１のセラミックス板の厚さ方向に開口径が漸減していた。 [Example 2]
One surface of the first ceramic plate (the joint surface with the second ceramic plate) is ground, and one surface of the first ceramic plate is subjected to the thickness direction of the first ceramic plate. A recess with an inclined surface was formed. The opening diameter of the formed recess gradually decreased in the thickness direction of the first ceramic plate.
第１のセラミックス板の一方の面（第２のセラミックス板との接合面）に研削加工を施して、第１のセラミックス板の一方の面に、第１のセラミックス板の厚さ方向に対して傾く傾斜面を有する凹部を形成した。形成した凹部は、第１のセラミックス板の厚さ方向に開口径が漸減していた。 [Example 2]
One surface of the first ceramic plate (the joint surface with the second ceramic plate) is ground, and one surface of the first ceramic plate is subjected to the thickness direction of the first ceramic plate. A recess with an inclined surface was formed. The opening diameter of the formed recess gradually decreased in the thickness direction of the first ceramic plate.
次いで、スクリーン印刷法により、第１のセラミックス板に形成した凹部に電極層形成用ペーストを塗布し、電極層塗膜を形成した。電極層形成用ペーストとしては、実施例１と同じものを用いた。
Next, the electrode layer forming paste was applied to the recesses formed in the first ceramic plate by the screen printing method to form an electrode layer coating film. As the electrode layer forming paste, the same paste as in Example 1 was used.
電極層塗膜の厚みは、凹部の最深部において深さの８０％とし、他の部分電極層塗膜の厚みは、凹部の最深部における電極層塗膜の表面と、高さ位置を揃えることで調整した。
なお、「凹部の深さ」は、第１のセラミックス板の一方の面を基準面として、基準面から凹部底部に垂線を下したときの、基準面から凹部底部までの距離を指す。 The thickness of the electrode layer coating film is 80% of the depth at the deepest part of the recess, and the thickness of the other partial electrode layer coating film is aligned with the surface of the electrode layer coating film at the deepest part of the recess. Adjusted with.
The “depth of the recess” refers to the distance from the reference surface to the bottom of the recess when a perpendicular line is drawn from the reference surface to the bottom of the recess with one surface of the first ceramic plate as the reference surface.
なお、「凹部の深さ」は、第１のセラミックス板の一方の面を基準面として、基準面から凹部底部に垂線を下したときの、基準面から凹部底部までの距離を指す。 The thickness of the electrode layer coating film is 80% of the depth at the deepest part of the recess, and the thickness of the other partial electrode layer coating film is aligned with the surface of the electrode layer coating film at the deepest part of the recess. Adjusted with.
The “depth of the recess” refers to the distance from the reference surface to the bottom of the recess when a perpendicular line is drawn from the reference surface to the bottom of the recess with one surface of the first ceramic plate as the reference surface.
次いで、電極層塗膜を形成した面が内側になる姿勢で、第１のセラミックス板の一方の面に、第２のセラミックス板を積層した。
Next, the second ceramic plate was laminated on one surface of the first ceramic plate in a posture in which the surface on which the electrode layer coating film was formed was on the inside.
次いで、第１のセラミックス板、電極層塗膜及び第２のセラミックス板を含む積層体を、アルゴン雰囲気下、加熱しながら、厚さ方向に加圧した。熱処理温度を１７００℃、加圧力を１０ＭＰａ、熱処理及び加圧する時間を２時間とした。
以上の工程により、図３に示すような実施例２のセラミックス接合体を得た。 Next, the laminate containing the first ceramic plate, the electrode layer coating film, and the second ceramic plate was pressurized in the thickness direction while heating under an argon atmosphere. The heat treatment temperature was 1700 ° C., the pressing force was 10 MPa, and the heat treatment and pressurizing time was 2 hours.
Through the above steps, the ceramic joint of Example 2 as shown in FIG. 3 was obtained.
以上の工程により、図３に示すような実施例２のセラミックス接合体を得た。 Next, the laminate containing the first ceramic plate, the electrode layer coating film, and the second ceramic plate was pressurized in the thickness direction while heating under an argon atmosphere. The heat treatment temperature was 1700 ° C., the pressing force was 10 MPa, and the heat treatment and pressurizing time was 2 hours.
Through the above steps, the ceramic joint of Example 2 as shown in FIG. 3 was obtained.
（電極層の密度）
電極層の密度は、上記（電極層の相対密度の測定方法）に記載の方法で求めた。実施例１のセラミックス接合体において、電極層の外縁部の密度はほぼ１００％であった。 (Density of electrode layer)
The density of the electrode layer was determined by the method described above (method for measuring the relative density of the electrode layer). In the ceramic joint of Example 1, the density of the outer edge portion of the electrode layer was almost 100%.
電極層の密度は、上記（電極層の相対密度の測定方法）に記載の方法で求めた。実施例１のセラミックス接合体において、電極層の外縁部の密度はほぼ１００％であった。 (Density of electrode layer)
The density of the electrode layer was determined by the method described above (method for measuring the relative density of the electrode layer). In the ceramic joint of Example 1, the density of the outer edge portion of the electrode layer was almost 100%.
各評価結果を表２に示す。
Table 2 shows the results of each evaluation.
電極層の中心の密度は、ほぼ１００％であることを確認した。表２の結果から、実施例２のセラミックス接合体は、実施例１のセラミックス接合体と比べ電極層の外縁が相対的に低密度であるが、実施例１と遜色ない絶縁性を示し、比較例のセラミックス接合体よりも絶縁耐圧が高いことが分かった。
It was confirmed that the density at the center of the electrode layer was almost 100%. From the results in Table 2, the ceramic joint of Example 2 has a relatively low density of the outer edge of the electrode layer as compared with the ceramic joint of Example 1, but shows an insulating property comparable to that of Example 1 and is compared. It was found that the withstand voltage was higher than that of the ceramic joint in the example.
なお、実施例１と実施例２とでは、絶縁層の形成の仕方が異なるが、絶縁層が有する機能が共通する。そのため、実施例１の構成において実施例２のように電極層の外縁が低密度であるとしても、比較例のセラミックス接合体よりも絶縁耐圧が高いことが想定される。
Although the method of forming the insulating layer is different between the first embodiment and the second embodiment, the functions of the insulating layer are common. Therefore, even if the outer edge of the electrode layer has a low density as in the second embodiment in the configuration of the first embodiment, it is assumed that the dielectric strength is higher than that of the ceramic junction of the comparative example.
本発明のセラミックス接合体は、一対のセラミックス板と、前記一対のセラミックス板の間に介在する電極層及び絶縁層と、を備え、前記絶縁層は、絶縁性材料と導電性材料から構成される。そのため、セラミックス板と絶縁層の接合界面において、絶縁破壊（放電）が抑制される。このようなセラミックス接合体は、静電チャック装置の静電チャック部材に好適に用いられ、その有用性は非常に大きいものである。
The ceramic joint of the present invention includes a pair of ceramic plates, an electrode layer and an insulating layer interposed between the pair of ceramic plates, and the insulating layer is composed of an insulating material and a conductive material. Therefore, dielectric breakdown (discharge) is suppressed at the junction interface between the ceramic plate and the insulating layer. Such a ceramic joint is suitably used for an electrostatic chuck member of an electrostatic chuck device, and its usefulness is very great.
１，１０，２０ セラミックス接合体
２ セラミックス板（第１のセラミックス板）
３ セラミックス板（第２のセラミックス板）
４ 電極層
５ 絶縁層
１００ 静電チャック装置
１０２ 静電チャック部材
１０３ 温度調整用ベース部材
１０４ 接着剤層
１１１ 載置板
１１２ 支持板
１１３ 静電吸着用電極
１１４ 絶縁材
１１５ 固定孔
１１６ 給電用端子
１１７ 導電性接着層
１１８ 貫通孔
１２１ 流路
１２２ 高周波電源
１２３ 絶縁材料
１２４ 直流電源 1,10,20 Ceramic joint 2 Ceramic plate (first ceramic plate)
3 Ceramic plate (second ceramic plate)
4Electrode layer 5 Insulation layer 100 Electrostatic chuck device 102 Electrostatic chuck member 103 Temperature control base member 104 Adhesive layer 111 Mounting plate 112 Support plate 113 Electrostatic adsorption electrode 114 Insulation material 115 Fixing hole 116 Power supply terminal 117 Conductive adhesive layer 118 Through hole 121 Flow path 122 High frequency power supply 123 Insulation material 124 DC power supply
２ セラミックス板（第１のセラミックス板）
３ セラミックス板（第２のセラミックス板）
４ 電極層
５ 絶縁層
１００ 静電チャック装置
１０２ 静電チャック部材
１０３ 温度調整用ベース部材
１０４ 接着剤層
１１１ 載置板
１１２ 支持板
１１３ 静電吸着用電極
１１４ 絶縁材
１１５ 固定孔
１１６ 給電用端子
１１７ 導電性接着層
１１８ 貫通孔
１２１ 流路
１２２ 高周波電源
１２３ 絶縁材料
１２４ 直流電源 1,10,20 Ceramic joint 2 Ceramic plate (first ceramic plate)
3 Ceramic plate (second ceramic plate)
4
Claims (8)
- 一対のセラミックス板と、
前記一対のセラミックス板の間に介在する電極層と、
前記一対のセラミックス板の間において、前記電極層の周囲に配置された絶縁層と、を備え、
前記絶縁層は、絶縁性材料と導電性材料から構成される、セラミックス接合体。 A pair of ceramic plates and
An electrode layer interposed between the pair of ceramic plates and
An insulating layer arranged around the electrode layer is provided between the pair of ceramic plates.
The insulating layer is a ceramic joint composed of an insulating material and a conductive material. - 前記絶縁層は、前記一対のセラミックス板の一方と一体的に形成されている、請求項１に記載のセラミックス接合体。 The ceramic joint according to claim 1, wherein the insulating layer is integrally formed with one of the pair of ceramic plates.
- 前記絶縁性材料は、Ａｌ２Ｏ３、ＡｌＮ、Ｓｉ３Ｎ４、Ｙ２Ｏ３、ＹＡＧ、ＳｍＡｌＯ３、ＭｇＯ及びＳｉＯ２からなる群から選択される少なくとも１種である、請求項１又は２に記載のセラミックス接合体。 The insulating material is at least one selected from the group consisting of Al 2 O 3 , Al N, Si 3 N 4 , Y 2 O 3 , YAG, SmAlO 3 , MgO and SiO 2 , claim 1 or 2. The ceramic joint described in 1.
- 前記導電性材料は、ＳｉＣ、ＴｉＯ２、ＴｉＮ、ＴｉＣ、Ｗ、ＷＣ、Ｍｏ、Ｍｏ２Ｃ及びＣからなる群から選択される少なくとも１種である、請求項１から３のいずれか１項に記載のセラミックス接合体。 The conductive material is at least one selected from the group consisting of SiC, TiO 2 , TiN, TiC, W, WC, Mo, Mo 2 C and C, according to any one of claims 1 to 3. The ceramic junction described.
- 前記電極層の外縁の相対密度は、前記電極層の中心の相対密度よりも低密度である請求項１から４のいずれか１項に記載のセラミックス接合体。 The ceramic junction according to any one of claims 1 to 4, wherein the relative density of the outer edge of the electrode layer is lower than the relative density of the center of the electrode layer.
- 前記一対のセラミックス板の材料が、互いに同じである請求項１から５のいずれか１項に記載のセラミックス接合体。 The ceramic joint according to any one of claims 1 to 5, wherein the materials of the pair of ceramic plates are the same as each other.
- 前記一対のセラミックス板が、絶縁性材料と導電性材料とから構成される請求項１から６のいずれか１項に記載のセラミックス接合体。 The ceramic joint according to any one of claims 1 to 6, wherein the pair of ceramic plates is composed of an insulating material and a conductive material.
- セラミックスからなる静電チャック部材と、金属からなる温度調整用ベース部材とを、接着剤層を介して接合してなる静電チャック装置であって、
前記静電チャック部材は、請求項１から７のいずれか１項に記載のセラミックス接合体からなる、静電チャック装置。 An electrostatic chuck device in which an electrostatic chuck member made of ceramics and a temperature control base member made of metal are joined via an adhesive layer.
The electrostatic chuck member is an electrostatic chuck device comprising the ceramic joint according to any one of claims 1 to 7.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202180073783.4A CN116368727A (en) | 2020-12-28 | 2021-08-31 | Ceramic joint body and electrostatic chuck device |
| US18/259,385 US20240312769A1 (en) | 2020-12-28 | 2021-08-31 | Ceramic assembly and electrostatic chuck device |
| KR1020237016040A KR20230124549A (en) | 2020-12-28 | 2021-08-31 | Ceramics assembly, electrostatic chuck device |
| JP2022572908A JP7388575B2 (en) | 2020-12-28 | 2021-08-31 | Ceramic bonded body, electrostatic chuck device |
| TW110148464A TW202226422A (en) | 2020-12-28 | 2021-12-23 | Ceramic assembly and electrostatic chuck device |
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| JP2020-218678 | 2020-12-28 |
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| JP (1) | JP7388575B2 (en) |
| KR (1) | KR20230124549A (en) |
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| JP2002261157A (en) * | 2001-02-27 | 2002-09-13 | Kyocera Corp | Electrostatic chuck and treating device |
| JP2003124299A (en) * | 2001-10-17 | 2003-04-25 | Sumitomo Osaka Cement Co Ltd | Electrode contained susceptor and its manufacturing method |
| JP2011176275A (en) * | 2010-01-29 | 2011-09-08 | Sumitomo Osaka Cement Co Ltd | Electrostatic chuck device |
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| JP2021040110A (en) * | 2019-09-05 | 2021-03-11 | Toto株式会社 | Electrostatic chuck |
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| JPS5841329U (en) | 1981-09-11 | 1983-03-18 | クロコ株式会社 | storage container |
| JPH11297805A (en) * | 1998-04-13 | 1999-10-29 | Tomoegawa Paper Co Ltd | Electrostatic chucking device, laminated sheet and bonding agent therefor |
| JP6148845B2 (en) | 2012-11-06 | 2017-06-14 | 日本特殊陶業株式会社 | Method for manufacturing electrode-embedded ceramic sintered body |
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- 2021-08-31 JP JP2022572908A patent/JP7388575B2/en active Active
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Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002261157A (en) * | 2001-02-27 | 2002-09-13 | Kyocera Corp | Electrostatic chuck and treating device |
| JP2003124299A (en) * | 2001-10-17 | 2003-04-25 | Sumitomo Osaka Cement Co Ltd | Electrode contained susceptor and its manufacturing method |
| JP2011176275A (en) * | 2010-01-29 | 2011-09-08 | Sumitomo Osaka Cement Co Ltd | Electrostatic chuck device |
| JP2016201411A (en) * | 2015-04-08 | 2016-12-01 | 京セラ株式会社 | Sample holding tool |
| JP2020040865A (en) * | 2018-09-13 | 2020-03-19 | 日本特殊陶業株式会社 | Manufacturing method of ceramic member |
| JP2021040110A (en) * | 2019-09-05 | 2021-03-11 | Toto株式会社 | Electrostatic chuck |
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| JP7388575B2 (en) | 2023-11-29 |
| CN116368727A (en) | 2023-06-30 |
| JPWO2022145090A1 (en) | 2022-07-07 |
| KR20230124549A (en) | 2023-08-25 |
| TW202226422A (en) | 2022-07-01 |
| US20240312769A1 (en) | 2024-09-19 |
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