WO2022138514A1 - High frequency module and communication apparatus - Google Patents

High frequency module and communication apparatus Download PDF

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Publication number
WO2022138514A1
WO2022138514A1 PCT/JP2021/046880 JP2021046880W WO2022138514A1 WO 2022138514 A1 WO2022138514 A1 WO 2022138514A1 JP 2021046880 W JP2021046880 W JP 2021046880W WO 2022138514 A1 WO2022138514 A1 WO 2022138514A1
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WIPO (PCT)
Prior art keywords
electronic component
high frequency
frequency module
main surface
mounting board
Prior art date
Application number
PCT/JP2021/046880
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French (fr)
Japanese (ja)
Inventor
昌志 早川
Original Assignee
株式会社村田製作所
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Publication of WO2022138514A1 publication Critical patent/WO2022138514A1/en

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    • H01L23/13—Mountings, e.g. non-detachable insulating substrates characterised by the shape
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Definitions

  • the present invention generally relates to a high frequency module and a communication device, and more particularly to a high frequency module including a mounting board and a communication device including the high frequency module.
  • Patent Document 1 describes a mounting board, a first filter (first electronic component) arranged on the mounting board, and a semiconductor control IC (second electronic component) arranged on the first filter.
  • the high frequency module provided is disclosed.
  • An object of the present invention is to provide a high frequency module and a communication device capable of reducing the height.
  • the high frequency module includes a mounting board, a first electronic component, and a second electronic component.
  • the mounting board has a first main surface and a second main surface facing each other.
  • the first electronic component is mounted on the first main surface of the mounting board.
  • the second electronic component is arranged on the first electronic component.
  • the first main surface of the mounting board has a recess.
  • the first electronic component is mounted in the recess on the first main surface of the mounting board.
  • the communication device includes the high frequency module and a signal processing circuit.
  • the signal processing circuit is connected to the high frequency module.
  • the high frequency module and communication device according to the above aspect of the present invention can be reduced in height.
  • FIG. 1 is a cross-sectional view of the high frequency module according to the first embodiment.
  • FIG. 2 is a partially enlarged cross-sectional view of the same high frequency module.
  • FIG. 3 is a circuit configuration diagram of a communication device including the same high frequency module.
  • FIG. 4 is a cross-sectional view of the high frequency module according to the second embodiment.
  • FIG. 5 is a cross-sectional view of the high frequency module according to the third embodiment.
  • FIG. 6 is a cross-sectional view of the high frequency module according to the fourth embodiment.
  • FIG. 7 is a cross-sectional view of the high frequency module according to the fifth embodiment.
  • FIG. 8 is a cross-sectional view of the high frequency module according to the sixth embodiment.
  • FIG. 9 is a cross-sectional view of the high frequency module according to the seventh embodiment.
  • FIGS. 1, 2, 4 to 9 referred to in the following embodiments and the like are schematic views, and the ratio of the size and the thickness of each component in the figure does not necessarily reflect the actual dimensional ratio. Not always.
  • the high-frequency module 100 includes, for example, a mounting board 9, a first electronic component 1, and a second electronic component 2, as shown in FIGS. 1 and 2.
  • the mounting board 9 has a first main surface 91 and a second main surface 92 facing each other.
  • the first electronic component 1 is mounted on the first main surface 91 of the mounting board 9.
  • the second electronic component 2 is arranged on the first electronic component 1.
  • the second electronic component 2 is arranged on the main surface 11 on the side opposite to the mounting board 9 side of the first electronic component 1 in the thickness direction D1 of the mounting board 9.
  • the high frequency module 100 further includes a resin layer 5 and a shield layer 6.
  • the resin layer 5 is arranged on the first main surface 91 of the mounting substrate 9.
  • the resin layer 5 covers the outer peripheral surface 13 of the first electronic component 1 and the outer peripheral surface 23 of the second electronic component 2.
  • the shield layer 6 is a stack having a main surface 51 of the resin layer 5 opposite to the mounting substrate 9 side, and a plurality of electronic components 7 (see FIG. 2) including the first electronic component 1 and the second electronic component 2. It covers a part of the structure 10 (here, the main surface 21 on the side opposite to the mounting board 9 side in the second electronic component 2).
  • the stack structure 10 is a structure in which a plurality of electronic components 7 are stacked.
  • the high frequency module 100 further includes a third electronic component 3 and a fourth electronic component 4.
  • the third electronic component 3 is mounted on the first main surface 91 of the mounting board 9.
  • the fourth electronic component 4 is arranged on the third electronic component 3.
  • the fourth electronic component 4 is arranged on the main surface 31 of the third electronic component 3 on the side opposite to the mounting board 9 side in the thickness direction D1 of the mounting board 9.
  • the resin layer 5 also covers the outer peripheral surface 33 of the third electronic component 3 and the outer peripheral surface 43 of the fourth electronic component 4.
  • the shield layer 6 covers the main surface 41 of the fourth electronic component 4 on the side opposite to the mounting board 9 side.
  • the high frequency module 100 is used, for example, in the communication device 300.
  • the communication device 300 is, for example, a mobile phone (for example, a smartphone), but is not limited to this, and may be, for example, a wearable terminal (for example, a smart watch).
  • the high frequency module 100 is a module capable of supporting, for example, a 4G (4th generation mobile communication) standard, a 5G (5th generation mobile communication) standard, and the like.
  • the 4G standard is, for example, a 3GPP (Third Generation Partnership Project) LTE (Long Term Evolution) standard.
  • the 5G standard is, for example, 5G NR (New Radio).
  • the high frequency module 100 is a module capable of supporting carrier aggregation and dual connectivity, for example.
  • the high frequency module 100 can also support two uplink carrier aggregations that simultaneously use two frequency bands in the uplink.
  • the high frequency module 100 is configured so that, for example, the transmission signal input from the signal processing circuit 301 can be amplified and output to the antenna 310. Further, the high frequency module 100 is configured to amplify the received signal input from the antenna 310 and output it to the signal processing circuit 301.
  • the signal processing circuit 301 is not a component of the high frequency module 100, but a component of the communication device 300 including the high frequency module 100.
  • the high frequency module 100 according to the first embodiment is controlled by, for example, a signal processing circuit 301 included in the communication device 300.
  • the communication device 300 includes a high frequency module 100 and a signal processing circuit 301.
  • the communication device 300 further includes an antenna 310.
  • the communication device 300 further includes a circuit board on which the high frequency module 100 is mounted.
  • the circuit board is, for example, a printed wiring board.
  • the circuit board has a ground electrode to which a ground potential is applied.
  • the signal processing circuit 301 includes, for example, an RF signal processing circuit 302 and a baseband signal processing circuit 303.
  • the RF signal processing circuit 302 is, for example, an RFIC (Radio Frequency Integrated Circuit), and performs signal processing on a high frequency signal.
  • the RF signal processing circuit 302 performs signal processing such as up-conversion on the high frequency signal (transmission signal) output from the baseband signal processing circuit 303, and outputs the signal processed high frequency signal. Further, the RF signal processing circuit 302 performs signal processing such as down-conversion on the high frequency signal (received signal) output from the high frequency module 100, and uses the processed high frequency signal as a baseband signal processing circuit. Output to 303.
  • the baseband signal processing circuit 303 is, for example, a BBIC (Baseband Integrated Circuit).
  • the baseband signal processing circuit 303 generates an I-phase signal and a Q-phase signal from the baseband signal.
  • the baseband signal is, for example, an audio signal, an image signal, or the like input from the outside.
  • the baseband signal processing circuit 303 performs IQ modulation processing by synthesizing an I-phase signal and a Q-phase signal, and outputs a transmission signal.
  • the transmission signal is generated as a modulation signal (IQ signal) in which a carrier signal having a predetermined frequency is amplitude-modulated with a period longer than the period of the carrier signal.
  • IQ signal modulation signal
  • the received signal processed by the baseband signal processing circuit 303 is used, for example, for displaying an image as an image signal or for a call of a user of the communication device 300 as an audio signal.
  • the high frequency module 100 transmits a high frequency signal (received signal, transmitted signal) between the antenna 310 and the RF signal processing circuit 302 of the signal processing circuit 301.
  • the high frequency module 100 includes a plurality of (for example, three) transmission filters 131, 132, 133. Further, the high frequency module 100 includes a plurality of (for example, two) power amplifiers 111 and 112, a plurality of (for example, two) output matching circuits 113 and 114, and a controller 115. Further, the high frequency module 100 includes a plurality of (for example, three) reception filters 171, 172, and 173. Further, the high frequency module 100 includes a low noise amplifier 121 and an input matching circuit 123. Further, the high frequency module 100 includes a first switch 104, a second switch 105, and a third switch 106. In the high frequency module 100, the reception filter 173 constitutes the first electronic component 1 (see FIG.
  • the transmission filter 133 constitutes the second electronic component 2 (see FIG. 1). Further, in the high frequency module 100, the reception filter 171 constitutes the third electronic component 3 (see FIG. 1), and the transmission filter 131 constitutes the fourth electronic component 4 (see FIG. 1).
  • the high frequency module 100 is provided with a plurality of external connection terminals 8.
  • the plurality of external connection terminals 8 include an antenna terminal 81, two signal input terminals 82A and 82B, a signal output terminal 83, a control terminal 84, and a plurality of ground terminals 85 (see FIG. 1).
  • the plurality of ground terminals 85 are terminals that are electrically connected to the ground electrode of the above-mentioned circuit board included in the communication device 300 and are given a ground potential.
  • the plurality of transmission filters 131, 132, 133 are transmission filters having different frequency bands as pass bands.
  • the three transmission filters 131, 132, and 133 are described separately, the three transmission filters 131, 132, and 133 are referred to as the first transmission filter 131, the second transmission filter 132, and the third transmission filter 133, respectively.
  • the third transmission filter 133 is sometimes referred to.
  • the first transmission filter 131 is, for example, a filter whose pass band is the transmission band of the first communication band.
  • the second transmission filter 132 is, for example, a filter whose pass band is the transmission band of the second communication band.
  • the third transmission filter 133 is, for example, a filter whose pass band is the transmission band of the third communication band.
  • the first communication band corresponds to a transmission signal passing through the first transmission filter 131.
  • the second communication band corresponds to a transmission signal that passes through the second transmission filter 132.
  • the third communication band corresponds to a transmission signal that passes through the third transmission filter 133.
  • Each of the first communication band to the third communication band is, for example, a 3GPP LTE standard communication band or a 5G NR standard communication band.
  • the power amplifier 111 (hereinafter, also referred to as a first power amplifier 111) has a first input terminal and a first output terminal.
  • the first power amplifier 111 amplifies the transmission signal input to the first input terminal and outputs it from the first output terminal.
  • the first input terminal of the first power amplifier 111 is connected to the signal input terminal 82A.
  • the first input terminal of the first power amplifier 111 is connected to the signal processing circuit 301 via the signal input terminal 82A.
  • the signal input terminal 82A is a terminal for inputting a high frequency signal (transmission signal) from an external circuit (for example, a signal processing circuit 301) to the high frequency module 100.
  • the first output terminal of the first power amplifier 111, the first transmission filter 131, and the second transmission filter 132 are an output matching circuit 113 (hereinafter, also referred to as a first output matching circuit 113) and a second switch 105. It is possible to connect via.
  • the first power amplifier 111 is a multi-stage amplifier including, for example, a driver stage amplifier and a final stage amplifier. In the first power amplifier 111, the input terminal of the driver stage amplifier is connected to the signal input terminal 82A, the output terminal of the driver stage amplifier is connected to the input terminal of the final stage amplifier, and the output terminal of the final stage amplifier is matched to the first output. It is connected to the circuit 113.
  • the first power amplifier 111 is not limited to a multi-stage amplifier, and may be, for example, an common mode synthesis amplifier, a differential synthesis amplifier, or a Doherty amplifier.
  • the power amplifier 112 (hereinafter, also referred to as a second power amplifier 112) has a second input terminal and a second output terminal.
  • the second power amplifier 112 amplifies the transmission signal input to the second input terminal and outputs it from the second output terminal.
  • the second input terminal of the second power amplifier 112 is connected to the signal input terminal 82B.
  • the second input terminal of the second power amplifier 112 is connected to the signal processing circuit 301 via the signal input terminal 82B.
  • the signal input terminal 82B is a terminal for inputting a high frequency signal (transmission signal) from an external circuit (for example, a signal processing circuit 301) to the high frequency module 100.
  • the second power amplifier 112 is a multi-stage amplifier including, for example, a driver stage amplifier and a final stage amplifier.
  • the input terminal of the driver stage amplifier is connected to the signal input terminal 82B
  • the output terminal of the driver stage amplifier is connected to the input terminal of the final stage amplifier
  • the output terminal of the final stage amplifier is the second output matching. It is connected to the circuit 114.
  • the second power amplifier 112 is not limited to the multi-stage amplifier, and may be, for example, a common mode synthesis amplifier, a differential synthesis amplifier, or a Doherty amplifier.
  • the two power amplifiers 111 and 112 correspond to different power classes.
  • the "power class” is a classification (User Equipment Power Class) of the output power of the terminal (communication device 300) defined by the maximum output power, etc., and the smaller the number listed next to the "power class", the higher the classification. Indicates that it corresponds to the output power. For example, the maximum output power (29 dBm) of the power class 1 is larger than the maximum output power (26 dBm) of the power class 2, and the maximum output power (26 dBm) of the power class 2 is larger than the maximum output power (23 dBm) of the power class 3.
  • the measurement of the maximum output power is performed by a method specified by, for example, 3GPP or the like.
  • the first power amplifier 111 corresponds to the first power class (for example, power class 2 or power class 3), and the second power amplifier 112 corresponds to the second power class (for example, power class 1).
  • the maximum output power of the second power class is larger than the maximum output power of the first power class.
  • the first output matching circuit 113 is provided in the signal path between the first output terminal of the first power amplifier 111 and the second switch 105.
  • the first output matching circuit 113 is a circuit for achieving impedance matching between the first power amplifier 111 and the first transmission filter 131 and the second transmission filter 132.
  • the first output matching circuit 113 includes, for example, a first inductor L1 (see FIG. 1) connected between the first output terminal of the first power amplifier 111 and the second switch 105.
  • the first output matching circuit 113 may include, for example, a plurality of inductors and a plurality of capacitors.
  • the second output matching circuit 114 is provided in the signal path between the second output terminal of the second power amplifier 112 and the second switch 105.
  • the second output matching circuit 114 is a circuit for achieving impedance matching between the second power amplifier 112 and the third transmission filter 133.
  • the second output matching circuit 114 includes, for example, a second inductor L2 (see FIG. 1) connected between the second output terminal of the second power amplifier 112 and the second switch 105.
  • the second output matching circuit 114 may include, for example, a plurality of inductors and a plurality of capacitors.
  • the controller 115 controls, for example, the first power amplifier 111 and the second power amplifier 112 according to the control signal from the signal processing circuit 301.
  • the controller 115 is connected to, for example, the driver stage amplifier and the output stage amplifier of the first power amplifier 111.
  • the controller 115 is also connected to the driver stage amplifier and the output stage amplifier of the second power amplifier 112.
  • the controller 115 is connected to the signal processing circuit 301 via a plurality of (for example, four) control terminals 84.
  • the control terminal 84 is a terminal for inputting a control signal from an external circuit (for example, a signal processing circuit 301) to the controller 115.
  • the controller 115 controls the first power amplifier 111 and the second power amplifier 112 based on the control signal acquired from the control terminal 84.
  • the control signal acquired by the controller 115 from the control terminal 84 is a digital signal.
  • the number of control terminals 84 is, for example, four, but only one is shown in FIG.
  • the plurality of reception filters 171, 172, and 173 are reception filters having different frequency bands as pass bands.
  • the three reception filters 171 and 172 and 173 are described separately, the three reception filters 171 and 172 and 173 are referred to as the first reception filter 171 and the second reception filter 172 and the third reception filter 173, respectively.
  • the three reception filters 171 and 172 and 173 are referred to as the first reception filter 171 and the second reception filter 172 and the third reception filter 173, respectively.
  • the first reception filter 171 is, for example, a filter whose pass band is the reception band of the first communication band.
  • the second reception filter 172 is, for example, a filter having a reception band of the second communication band as a pass band.
  • the third reception filter 173 is, for example, a filter having a reception band of the third communication band as a pass band.
  • the first communication band corresponds to a received signal that passes through the first receive filter 171.
  • the second communication band corresponds to a received signal that passes through the second receive filter 172.
  • the third communication band corresponds to a received signal that passes through the third receive filter 173.
  • Each of the first communication band to the third communication band is, for example, a 3GPP LTE standard communication band or a 5G NR standard communication band.
  • the first transmission filter 131 and the first reception filter 171 form a first duplexer. Further, in the high frequency module 100, the second transmission filter 132 and the second reception filter 172 form a second duplexer. Further, in the high frequency module 100, the third transmission filter 133 and the reception filter 173 form a third duplexer.
  • the low noise amplifier 121 has an input terminal and an output terminal.
  • the low noise amplifier 121 amplifies the received signal input to the input terminal and outputs it from the output terminal.
  • the input terminal of the low noise amplifier 121 is connected to the third switch 106 via the input matching circuit 123.
  • the output terminal of the low noise amplifier 121 is connected to the signal output terminal 83.
  • the output terminal of the low noise amplifier 121 is connected to the signal processing circuit 301 via, for example, the signal output terminal 83.
  • the signal output terminal 83 is a terminal for outputting a high frequency signal (received signal) from the low noise amplifier 121 to an external circuit (for example, a signal processing circuit 301).
  • the input terminal of the low noise amplifier 121 and the three reception filters 171, 172, and 173 can be connected via the input matching circuit 123 and the third switch 106.
  • the input matching circuit 123 is a circuit for impedance matching between the low noise amplifier 121 and the three receiving filters 171, 172, and 173.
  • the input matching circuit 123 includes, for example, an inductor connected between the input terminal of the low noise amplifier 121 and the third switch 106.
  • the input matching circuit 123 may include, for example, a plurality of inductors and a plurality of capacitors.
  • the high frequency module 100 may include a plurality (three) of input matching circuits 123, and in this case, the three input matching circuits 123 have the low noise amplifier 121 and the three receiving filters 171, 172, and 173, respectively. It may be provided one by one between them.
  • the first switch 104 has a common terminal 140 and a plurality of (for example, three) selection terminals 141 to 143.
  • the common terminal 140 is connected to the antenna terminal 81.
  • the high frequency module 100 is not limited to the case where the common terminal 140 and the antenna terminal 81 are connected without interposing other circuit elements, and may be connected, for example, via a low-pass filter and a coupler.
  • the selection terminal 141 is connected to a connection point between the output terminal of the first transmission filter 131 and the input terminal of the first reception filter 171.
  • the selection terminal 142 is connected to a connection point between the output terminal of the second transmission filter 132 and the input terminal of the second reception filter 172.
  • the selection terminal 143 is connected to a connection point between the output terminal of the third transmission filter 133 and the input terminal of the third reception filter 173.
  • the first switch 104 is, for example, a switch to which at least one or more of the three selection terminals 141 to 143 can be connected to the common terminal 140.
  • the first switch 104 is, for example, a switch capable of one-to-one and one-to-many connections.
  • the first switch 104 is controlled by, for example, the signal processing circuit 301.
  • the first switch 104 switches the connection state between the common terminal 140 and the three selection terminals 141 to 143 according to the control signal from the RF signal processing circuit 302 of the signal processing circuit 301.
  • the first switch 104 is, for example, a switch IC (Integrated Circuit).
  • the second switch 105 includes a first terminal (common terminal) 150A, a second terminal 150B, a plurality of (for example, two) first selection terminals 151 and 152 that can be connected to the first terminal 150A, and a second terminal. It has a second selection terminal 153 that can be connected to 150B.
  • the first terminal 150A is connected to the first output terminal of the first power amplifier 111 via the first output matching circuit 113.
  • the first selection terminal 151 is connected to the input terminal of the first transmission filter 131.
  • the first selection terminal 152 is connected to the input terminal of the second transmission filter 132.
  • the second selection terminal 153 is connected to the input terminal of the third transmission filter 133.
  • the second switch 105 is, for example, a switch capable of connecting at least one or more of the two first selection terminals 151 and 152 to the first terminal 150A. Further, the second switch 105 is a switch capable of connecting the second selection terminal 153 to the second terminal 150B.
  • the second switch 105 is controlled by, for example, the signal processing circuit 301.
  • the second switch 105 is in a connection state between the common terminal 150A and the plurality of first selection terminals 151 and 152, and the second terminal 150B and the second terminal 150B according to the control signal from the RF signal processing circuit 302 of the signal processing circuit 301. 2 Switch the connection status with the selection terminal 153.
  • the second switch 105 is, for example, a switch IC.
  • the third switch 106 has a common terminal 160 and a plurality of (for example, three) selection terminals 161, 162, and 163.
  • the common terminal 160 is connected to the input terminal of the low noise amplifier 121 via the input matching circuit 123.
  • the selection terminal 161 is connected to the output terminal of the first reception filter 171.
  • the selection terminal 162 is connected to the output terminal of the second reception filter 172.
  • the selection terminal 163 is connected to the output terminal of the third reception filter 173.
  • the third switch 106 is, for example, a switch capable of connecting at least one or more of the three selection terminals 161 to 163 to the common terminal 160.
  • the third switch 106 is, for example, a switch capable of one-to-one and one-to-many connections.
  • the third switch 106 is controlled by, for example, the signal processing circuit 301.
  • the third switch 106 switches the connection state between the common terminal 160 and the three selection terminals 161 to 163 according to the control signal from the RF signal processing circuit 302 of the signal processing circuit 301.
  • the third switch 106 is, for example, a switch IC.
  • the high frequency module 100 includes a mounting board 9, a first electronic component 1 (third receiving filter 173), and a second electronic component 2 (third). It includes a transmission filter 133), a third electronic component 3 (first reception filter 171), and a fourth electronic component (first transmission filter 131). Further, the high frequency module 100 includes a first inductor L1 included in the first output matching circuit 113 (see FIG. 3) and a second inductor L2 included in the second output matching circuit 114 (see FIG. 3).
  • the high frequency module 100 includes a second transmission filter 132, a second reception filter 172, a first power amplifier 111, a second power amplifier 112, a controller 115, a low noise amplifier 121, an input matching circuit 123, and the like. It includes a first switch 104, a second switch 105, and a third switch 106 (see FIG. 3). Further, the high frequency module 100 includes a plurality of external connection terminals 8. Further, the high frequency module 100 includes a resin layer 5 and a shield layer 6.
  • the mounting board 9 has a first main surface 91 and a second main surface 92 facing each other in the thickness direction D1 of the mounting board 9.
  • the mounting substrate 9 is, for example, a multilayer substrate including a plurality of dielectric layers 97 (see FIG. 2) and a plurality of conductive layers 98 (see FIG. 2).
  • the plurality of dielectric layers 97 and the plurality of conductive layers 98 are laminated in the thickness direction D1 of the mounting substrate 9.
  • the plurality of conductive layers 98 are formed in a predetermined pattern defined for each layer.
  • Each of the plurality of conductive layers 98 includes one or a plurality of conductor portions in one plane orthogonal to the thickness direction D1 of the mounting substrate 9.
  • the material of each conductive layer 98 is, for example, copper.
  • the plurality of conductive layers 98 include a ground layer.
  • a plurality of ground terminals 85 and a ground layer are electrically connected via a via conductor or the like included in the mounting substrate 9.
  • the mounting substrate 9 is, for example, an LTCC (Low Temperature Co-fired Ceramics) substrate.
  • the mounting substrate 9 is not limited to the LTCC substrate, and may be, for example, a printed wiring board, an HTCC (High Temperature Co-fired Ceramics) substrate, or a resin multilayer substrate.
  • the mounting board 9 is not limited to the LTCC board, and may be, for example, a wiring structure.
  • the wiring structure is, for example, a multi-layer structure.
  • the multilayer structure includes at least one insulating layer and at least one conductive layer.
  • the insulating layer is formed in a predetermined pattern. When there are a plurality of insulating layers, the plurality of insulating layers are formed in a predetermined pattern determined for each layer.
  • the conductive layer is formed in a predetermined pattern different from the predetermined pattern of the insulating layer. When there are a plurality of conductive layers, the plurality of conductive layers are formed in a predetermined pattern determined for each layer.
  • the conductive layer may include one or more rewiring portions.
  • the first surface is the first main surface 91 of the mounting board 9, and the second surface is the second main surface 92 of the mounting board 9.
  • the wiring structure may be, for example, an interposer.
  • the interposer may be an interposer using a silicon substrate or a substrate composed of multiple layers.
  • the first main surface 91 and the second main surface 92 of the mounting board 9 are separated from each other in the thickness direction D1 of the mounting board 9, and intersect with the thickness direction D1 of the mounting board 9.
  • the first main surface 91 of the mounting board 9 is, for example, orthogonal to the thickness direction D1 of the mounting board 9, but may include, for example, the side surface of the conductor portion as a surface not orthogonal to the thickness direction D1.
  • the second main surface 92 of the mounting board 9 is, for example, orthogonal to the thickness direction D1 of the mounting board 9, but includes, for example, the side surface of the conductor portion as a surface not orthogonal to the thickness direction D1. You may.
  • first main surface 91 and the second main surface 92 of the mounting substrate 9 may be formed with fine irregularities, concave portions or convex portions.
  • first main surface 91 of the mounting board 9 has a recess 911 (hereinafter, also referred to as a first recess 911)
  • the first main surface 91 of the mounting board 9 is the inner surface (bottom surface 9111 and inner surface) of the first recess 911.
  • the peripheral surface 9112) is included.
  • the first main surface 91 of the mounting board 9 has the second recess 912
  • the first main surface 91 of the mounting board 9 includes the inner surface (bottom surface 9121 and inner peripheral surface 9122) of the second recess 912.
  • a plurality of circuit components are mounted on the first main surface 91 of the mounting board 9.
  • the plurality of circuit components include a first electronic component 1 (third receiving filter 173), a third electronic component 3 (first receiving filter 171), a second receiving filter 172, a first power amplifier 111, and a second. It includes a power amplifier 112, a first inductor L1, a second inductor L2, an inductor of an input matching circuit 123, a first switch 104, a second switch 105, and a third switch 106.
  • the circuit component is mounted on the first main surface 91 of the mounting board 9 means that the circuit component is arranged on the first main surface 91 of the mounting board 9 (mechanically connected). And that the circuit component is electrically connected to (the appropriate conductor portion) of the mounting board 9.
  • the second electronic component 2 (third transmission filter 133) is opposite to the mounting board 9 side of the first electronic component 1 (third receiving filter 173) in the thickness direction D1 of the mounting board 9. It is arranged on the main surface 11 on the side.
  • the fourth electronic component 4 (first transmission filter 131) is opposite to the mounting substrate 9 side of the third electronic component 3 (first receiving filter 171) in the thickness direction D1 of the mounting substrate 9. It is arranged on the main surface 31 on the side.
  • the second transmission filter 132 is arranged on the second reception filter 172.
  • Each of the three receive filters 171, 172, 173 is, for example, a ladder type filter, and has a plurality of (for example, four) series arm resonators and a plurality of (for example, three) parallel arm resonators. Have.
  • Each of the three receive filters 171 and 172, 173 is, for example, an elastic wave filter.
  • each of the plurality of series arm resonators and the plurality of parallel arm resonators is composed of elastic wave resonators.
  • the surface acoustic wave filter is, for example, a surface acoustic wave filter that utilizes a surface acoustic wave.
  • each of the plurality of series arm resonators and the plurality of parallel arm resonators is, for example, a SAW (Surface Acoustic Wave) resonator.
  • the three reception filters 171, 172, and 173 are mounted on the first main surface 91 of the mounting board 9.
  • the outer edges of each of the three receiving filters 171 and 172, 173 are rectangular.
  • Each of the three transmission filters 131, 132, 133 is, for example, a ladder type filter, and has a plurality of (for example, four) series arm resonators and a plurality of (for example, three) parallel arm resonators.
  • Each of the three transmission filters 131, 132, 133 is, for example, an elastic wave filter.
  • each of the plurality of series arm resonators and the plurality of parallel arm resonators is composed of elastic wave resonators.
  • the surface acoustic wave filter is, for example, a surface acoustic wave filter that utilizes a surface acoustic wave.
  • each of the plurality of series arm resonators and the plurality of parallel arm resonators is, for example, a SAW resonator.
  • the first transmission filter 131 is arranged on the first reception filter 171.
  • the second transmission filter 132 is arranged on the second reception filter 172.
  • the third transmission filter 133 is arranged on the third reception filter 173.
  • the outer edges of each of the three transmission filters 131, 132, 133 are rectangular.
  • Each of the first power amplifier 111 and the second power amplifier 112 is a power amplification IC chip. As described above, the first power amplifier 111 and the second power amplifier 112 are mounted on the first main surface 91 of the mounting board 9. The outer edges of the first power amplifier 111 and the second power amplifier 112 are rectangular in a plan view from the thickness direction D1 of the mounting board 9.
  • Each of the driver stage amplifier and the final stage amplifier of the first power amplifier 111 includes an amplification transistor.
  • the amplification transistor is, for example, an HBT (Heterojunction Bipolar Transistor).
  • the amplification transistor is not limited to the HBT, but may be a bipolar transistor or a FET (Field Effect Transistor).
  • the FET is, for example, a MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor).
  • Each of the driver stage amplifier and the final stage amplifier of the second power amplifier 112 includes an amplification transistor.
  • the amplification transistor is, for example, an HBT.
  • the amplification transistor is not limited to the HBT, but may be a bipolar transistor or FET.
  • the FET is, for example, a MOSFET.
  • the first inductor L1 included in the first output matching circuit 113 is a chip inductor, and is mounted on the first main surface 91 of the mounting board 9 as described above.
  • the outer edge of the first inductor L1 is rectangular in a plan view from the thickness direction D1 of the mounting substrate 9.
  • the first output matching circuit 113 may include a transformer.
  • the second inductor L2 included in the second output matching circuit 114 is a chip inductor, and is mounted on the first main surface 91 of the mounting board 9 as described above.
  • the outer edge of the second inductor L2 is rectangular in a plan view from the thickness direction D1 of the mounting substrate 9.
  • the second output matching circuit 114 may include a transformer.
  • the controller 115 is mounted on the first main surface 91 of the mounting board 9.
  • the outer edge of the controller 115 is rectangular in a plan view from the thickness direction D1 of the mounting board 9.
  • the controller 115 is an IC chip including a circuit unit.
  • the circuit unit includes a control circuit that controls the first power amplifier 111 and the second power amplifier 112 according to the control signal from the signal processing circuit 301.
  • the low noise amplifier 121 is mounted on the first main surface 91 of the mounting board 9.
  • the outer edge of the low noise amplifier 121 is rectangular in a plan view from the thickness direction D1 of the mounting board 9.
  • the low noise amplifier 121 includes a FET as an amplification transistor for amplifying a received signal input to the input terminal of the low noise amplifier 121.
  • the amplification transistor is not limited to the FET, and may be, for example, a bipolar transistor.
  • the inductor included in the input matching circuit 123 is a chip inductor, which is mounted on the first main surface 91 of the mounting board 9.
  • the outer edge of the inductor is rectangular in plan view from the thickness direction D1 of the mounting board 9.
  • the first switch 104, the second switch 105, and the third switch 106 are mounted on the first main surface 91 of the mounting board 9.
  • the outer edges of the first switch 104, the second switch 105, and the third switch 106 are rectangular in plan view from the thickness direction D1 of the mounting board 9.
  • Each of the first switch 104, the second switch 105, and the third switch 106 is an IC chip having a circuit unit.
  • the circuit unit includes a plurality of FETs as a plurality of switching elements. Each of the plurality of switching elements is not limited to the FET, and may be, for example, a bipolar transistor.
  • Each of the first switch 104, the second switch 105, and the third switch 106 is flip-chip mounted on the first main surface 91 of the mounting board 9. In the high frequency module 100, two or three of the first switch 104, the second switch 105, and the third switch 106 may be included in one IC chip.
  • the plurality of external connection terminals 8 are arranged on the second main surface 92 of the mounting board 9.
  • the external connection terminal 8 is arranged on the second main surface 92 of the mounting board 9" means that the external connection terminal 8 is mechanically connected to the second main surface 92 of the mounting board 9 and that it is external. Includes that the connection terminal 8 is electrically connected to (the appropriate conductor portion) of the mounting board 9.
  • the plurality of external connection terminals 8 include an antenna terminal 81, a signal input terminal 82A, a signal input terminal 82B, a signal output terminal 83, a control terminal 84, and a plurality of ground terminals 85 (FIG. 3). 1) and is included.
  • the plurality of ground terminals 85 are electrically connected to the ground layer of the mounting board 9.
  • the ground layer is the circuit ground of the high frequency module 100, and the plurality of circuit components of the high frequency module 100 include circuit components that are electrically connected to the ground layer.
  • the material of the plurality of external connection terminals 8 is, for example, a metal (for example, copper, a copper alloy, etc.).
  • the resin layer 5 is arranged on the first main surface 91 of the mounting substrate 9.
  • the resin layer 5 contains a resin (for example, an epoxy resin).
  • the resin layer 5 may contain a filler in addition to the resin.
  • the resin layer 5 covers the outer peripheral surface 13 of the first electronic component 1 (third receiving filter 173) and the outer peripheral surface 33 of the third electronic component 3 (first receiving filter 171).
  • the outer peripheral surface 13 of the first electronic component 1 includes four side surfaces of the first electronic component 1 connecting the main surface 11 on the side opposite to the mounting board 9 side and the main surface on the mounting board 9 side.
  • the outer peripheral surface 33 of the third electronic component 3 includes four side surfaces of the third electronic component 3 connecting the main surface 31 on the side opposite to the mounting board 9 side and the main surface on the mounting board 9 side.
  • the resin layer 5 covers the first inductor L1 and the second inductor L2.
  • the resin layer 5 includes an outer peripheral surface of the second reception filter 172, a first power amplifier 111, a second power amplifier 112, a controller 115, a low noise amplifier 121, an inductor included in the input matching circuit 123, a first switch 104, and a first switch. It also covers the 2 switch 105 and the 3rd switch 106.
  • the resin layer 5 is a second electronic component 2 (third transmission filter 133) arranged on the main surface 11 on the side opposite to the mounting board 9 side in the first electronic component 1 (third receiving filter 173). It also covers the outer peripheral surface 23.
  • the outer peripheral surface 23 of the second electronic component 2 is the four side surfaces of the second electronic component 2 connecting the main surface 21 on the side opposite to the first electronic component 1 side and the main surface on the first electronic component 1 side.
  • the resin layer 5 is the fourth electronic component 4 (first transmission filter 131) arranged on the main surface 31 on the side opposite to the mounting board 9 side in the third electronic component 3 (first receiving filter 171). It also covers the outer peripheral surface 43.
  • the outer peripheral surface 43 of the fourth electronic component 4 is a four side surface of the fourth electronic component 4 connecting the main surface 41 on the side opposite to the third electronic component 3 side and the main surface on the third electronic component 3 side. including.
  • the shield layer 6 covers the resin layer 5.
  • the shield layer 6 has conductivity.
  • the shield layer 6 is provided for the purpose of electromagnetic shielding inside and outside the high frequency module 100.
  • the shield layer 6 has a multi-layer structure in which a plurality of metal layers are laminated, but the shield layer 6 is not limited to this and may be one metal layer.
  • the metal layer contains one or more metals.
  • the shield layer 6 covers the main surface 51 of the resin layer 5 opposite to the mounting substrate 9 side, the outer peripheral surface 53 of the resin layer 5, and the outer peripheral surface 93 of the mounting substrate 9.
  • the shield layer 6 is in contact with at least a part of the outer peripheral surface of the ground layer of the mounting substrate 9. Thereby, the potential of the shield layer 6 can be made the same as the potential of the ground layer.
  • the shield layer 6 has a main surface 21 of the second electronic component 2 opposite to the first electronic component 1 side and a main surface 41 of the fourth electronic component 4 opposite to the third electronic component 3 side. Covering.
  • the shield layer 6 is in contact with the main surface 21 of the second electronic component 2 and the main surface 41 of the fourth electronic component 4. Further, the shield layer 6 covers the main surface of the second transmission filter 132 opposite to the second reception filter 172 side, and the main surface of the second transmission filter 132 opposite to the second reception filter 172 side. Is in contact with.
  • the first main surface 91 of the mounting substrate 9 has a first concave portion 911 and a second concave portion 912.
  • the mounting substrate 9 is the multilayer board described above, and has a plurality of (for example, 20) dielectric layers 97 (see FIG. 2).
  • the first recess 911 and the second recess 912 are formed over seven of the 20 dielectric layers 97 in the thickness direction D1 of the mounting substrate 9.
  • the first recess 911 and the second recess 912 may be formed over at least one of the plurality of dielectric layers 97.
  • the depth of each of the first recess 911 and the second recess 912 is made smaller than half the maximum thickness of the mounting board 9, for example, from the viewpoint of the strength of the mounting board 9.
  • the first electronic component 1 is mounted on the first main surface 91 of the mounting board 9 so that its thickness direction is aligned with the thickness direction D1 of the mounting board 9.
  • the third electronic component 3 is mounted on the first main surface 91 of the mounting board 9 so that its thickness direction is aligned with the thickness direction D1 of the mounting board 9.
  • the second electronic component 2 is arranged on the main surface 11 of the first electronic component 1 so that the thickness direction thereof is aligned with the thickness direction D1 of the mounting substrate 9.
  • the fourth electronic component 4 is arranged on the main surface 31 of the third electronic component 3 so that the thickness direction thereof is aligned with the thickness direction D1 of the mounting substrate 9.
  • the first electronic component 1 is mounted in the first recess 911.
  • the first electronic component 1 has a plurality of external electrodes 15 connected to the first recess 911 on the first main surface 91 of the mounting board 9.
  • Each of the plurality of external electrodes 15 is a bump having conductivity.
  • the thickness of the external electrode 15 in the thickness direction D1 of the mounting substrate 9 is smaller than the depth of the first recess 911, but is not limited to this, and may be, for example, less than or equal to the depth of the first recess 911.
  • the external size of the first electronic component 1 is smaller than the size of the recess 911 in a plan view from the thickness direction D1 of the mounting substrate 9.
  • the entire first electronic component 1 overlaps a part of the recess 911 in a plan view from the thickness direction D1 of the mounting substrate 9.
  • “In the plan view from the thickness direction D1 of the mounting board 9, all of the first electronic components 1 overlap with a part of the recess 911” is the first plan view from the thickness direction D1 of the mounting board 9. It means that the electronic component 1 is in the region of the recess 911.
  • the second electronic component 2 is arranged on the main surface 11 of the first electronic component 1. In other words, the second electronic component 2 is stacked on the first electronic component 1.
  • the second electronic component 2 has a plurality of external electrodes 25.
  • each of the plurality of external electrodes 25 of the second electronic component 2 is a bump having conductivity.
  • the second electronic component 2 is connected to the first electronic component 1 by a plurality of external electrodes 25, and is connected to the mounting board 9 via the first electronic component 1.
  • the first electronic component 1 has a plurality of wirings formed along the thickness direction of the first electronic component 1, and the plurality of external electrodes 25 of the second electronic component 2 have the first electron.
  • the wiring connected on the main surface 11 of the first electronic component 1 and the external electrode 15 connected to the wiring are electrically connected to the mounting board 9 via the wiring. ..
  • the external size of the second electronic component 2 is the first in a plan view from the thickness direction D1 of the mounting substrate 9. It has the same external size as the electronic component 1, and the entire second electronic component 2 overlaps the entire first electronic component 1.
  • the external size of the second electronic component 2 is not limited to the same as the external size of the first electronic component 1, and may be different external sizes.
  • the third electronic component 3 is mounted in the second recess 912.
  • the third electronic component 3 has a plurality of external electrodes 35 connected to the second recess 912 on the first main surface 91 of the mounting board 9.
  • Each of the plurality of external electrodes 35 is a bump having conductivity.
  • the thickness of the external electrode 35 in the thickness direction D1 of the mounting substrate 9 is smaller than the depth of the second recess 912, but is not limited to this, and may be, for example, less than or equal to the depth of the second recess 912.
  • the external size of the third electronic component 3 is smaller than the size of the second recess 912 in a plan view from the thickness direction D1 of the mounting substrate 9.
  • the entire third electronic component 3 overlaps a part of the second recess 912 in a plan view from the thickness direction D1 of the mounting substrate 9.
  • all of the third electronic components 3 overlap with a part of the second recess 912 is a plan view from the thickness direction D1 of the mounting board 9. It means that the third electronic component 3 is in the region of the second recess 912.
  • the fourth electronic component 4 is arranged on the main surface 31 of the third electronic component 3. In other words, the fourth electronic component 4 is stacked on the third electronic component 3.
  • the fourth electronic component 4 has a plurality of external electrodes 45.
  • each of the plurality of external electrodes 45 of the fourth electronic component 4 is a bump having conductivity.
  • the fourth electronic component 4 is connected to the third electronic component 3 by a plurality of external electrodes 45, and is connected to the mounting board 9 via the third electronic component 3.
  • the plurality of external electrodes 45 of the fourth electronic component 4 are mounted on the mounting substrate 9 via a through conductor portion or the like formed along the thickness direction of the third electronic component 3 in the third electronic component 3. Is electrically connected to.
  • the outer size of the fourth electronic component 4 is the outer size of the third electronic component 3 in a plan view from the thickness direction D1 of the mounting substrate 9. The same applies to the above, and all of the fourth electronic components 4 overlap with all of the third electronic components 3.
  • the external size of the fourth electronic component 4 is not limited to the same as the external size of the third electronic component 3, and may be different external sizes.
  • the resin layer 5 does not cover the main surface 21 of the second electronic component 2 and the main surface 41 of the fourth electronic component 4.
  • the main surface 51 of the resin layer 5 is substantially flush with the main surface 21 of the second electronic component 2 and the main surface 41 of the fourth electronic component 4.
  • the resin layer 5 includes an underfill portion 54 interposed between the first electronic component 1 and the first recess 911 in the mounting board 9 in the thickness direction D1 of the mounting board 9. Further, the resin layer 5 includes an underfill portion 55 interposed between the third electronic component 3 and the second recess 912 in the mounting board 9 in the thickness direction D1 of the mounting board 9.
  • the resin layer 5 also covers at least a part of each side surface of the plurality of external electrodes 15 of the first electronic component 1. Further, the resin layer 5 also covers at least a part of each side surface of the plurality of external electrodes 25 of the second electronic component 2. Further, the resin layer 5 also covers at least a part of each side surface of the plurality of external electrodes 35 of the third electronic component 3. Further, the resin layer 5 also covers at least a part of each side surface of the plurality of external electrodes 45 of the fourth electronic component 4.
  • the shield layer 6 is in contact with the main surface 21 of the second electronic component 2 and the main surface 41 of the fourth electronic component 4.
  • the shield layer 6 is in contact with the entire main surface 21 of the second electronic component 2 (third transmission filter 133).
  • the second electronic component 2 is a transmission circuit component, and the third transmission filter connected to the second power amplifier 112 having the larger maximum output power among the first power amplifier 111 and the second power amplifier 112. Because it is 133.
  • the shield layer 6 is in contact with the entire main surface 41 of the fourth electronic component 4 (first transmission filter 131). Further, the shield layer 6 may be in contact with the main surface of the second transmission filter 132 on the side opposite to the mounting board 9 side.
  • each of the main surface 21 of the second electronic component 2 and the main surface 41 of the fourth electronic component 4 is a rough surface.
  • fine irregularities are formed on each of the main surface 21 of the second electronic component 2 and the main surface 41 of the fourth electronic component 4.
  • the main surface 21 of the second electronic component 2 is in a coarser state than the main surface 21 of the first electronic component 1.
  • the main surface 41 of the fourth electronic component 4 is in a rougher state than the main surface 31 of the third electronic component 3.
  • the maximum height roughness (Rz) of the main surface 21 of the second electronic component 2 is larger than the maximum height roughness (Rz) of the main surface 11 of the first electronic component 1.
  • the maximum height roughness of the main surface 41 of the fourth electronic component 4 is larger than the maximum height roughness of the main surface 31 of the third electronic component 3.
  • the maximum height roughness of each of the main surface 11 of the first electronic component 1, the main surface 21 of the second electronic component 2, the main surface 31 of the third electronic component 3, and the main surface 41 of the fourth electronic component 4 is high frequency. It is a value measured from the STEM image when the cross section of the module 100 is observed by STEM (Scanning Transmission Electron Microscope).
  • the maximum height roughness is determined in the STEM image by the main surface 11 of the first electronic component 1, the main surface 21 of the second electronic component 2, the main surface 31 of the third electronic component 3, and the main surface 41 of the fourth electronic component 4. It is the sum of the maximum value of the mountain height and the maximum value of the valley depth for each of. That is, the maximum height roughness is the main surface 11 of the first electronic component 1, the main surface 21 of the second electronic component 2, the main surface 31 of the third electronic component 3, and the main surface 41 of the fourth electronic component 4, respectively. In, it is the value of Peak to Valley of unevenness.
  • the surface roughness of each of the main surface 21 of the second electronic component 2 and the main surface 41 of the fourth electronic component 4 is determined by, for example, grinding the second electronic component 2 and the fourth electronic component 4 at the time of manufacturing the high frequency module 100. It can be changed depending on the conditions of the roughening process.
  • the maximum height roughness is not limited to the STEM image, but may be, for example, a value obtained from an SEM (Scanning Electron Microscope) image.
  • (1.4) Manufacturing Method of High Frequency Module As a manufacturing method of the high frequency module 100, for example, a manufacturing method including a first step, a second step, a third step, and a fourth step can be adopted. can.
  • the first step among the plurality of circuit components, the second electronic component 2, the fourth electronic component 4, and the first main surface 91 of the mounting board 9 in which the plurality of external connection terminals 8 are arranged on the second main surface 92 A circuit component other than the second transmission filter 132 is mounted, then the second electronic component 2 is arranged on the first electronic component 1, the fourth electronic component 4 is arranged on the third electronic component 3, and the second reception is performed.
  • This is a step of arranging the second transmission filter 132 on the filter 172.
  • the second step is a step of covering a plurality of circuit parts and the like and forming a resin material layer which is a source of the resin layer 5 on the first main surface 91 side of the mounting substrate 9.
  • the resin material layer is ground from the main surface of the resin material layer opposite to the mounting substrate 9, and further, the resin material layer, the second electronic component 2 (third transmission filter 133), and the third. 4
  • the resin layer 5 is formed by grinding the electronic component 4 (first transmission filter 131) and the second transmission filter 132, and the second electronic component 2, the fourth electronic component 4, and the second transmission filter 132 are formed. This is a process of reducing the thickness of each.
  • the second electronic component 2, the fourth electronic component 4, and the second transmission filter 132 are ground to grind the main surface 21 of the second electronic component 2, the main surface 41 of the fourth electronic component 4, and the second.
  • the main surface of the transmission filter 132 is roughened (roughened).
  • the fourth step is a step of forming the shield layer 6 by, for example, a sputtering method, a vapor deposition method, or a printing method.
  • the high frequency module 100 includes a mounting board 9, a first electronic component 1, and a second electronic component 2.
  • the mounting board 9 has a first main surface 91 and a second main surface 92 facing each other.
  • the first electronic component 1 is mounted on the first main surface 91 of the mounting board 9.
  • the second electronic component 2 is arranged on the first electronic component 1.
  • the first main surface 91 of the mounting board 9 has a recess 911.
  • the first electronic component 1 is mounted in the recess 911 on the first main surface 91 of the mounting board 9.
  • the high frequency module 100 according to the first embodiment can be made low in height. More specifically, the high frequency module 100 according to the first embodiment has a configuration in which the first electronic component 1 and the second electronic component 2 arranged on the main surface 11 of the first electronic component 1 are provided, and the thickness of the mounting substrate 9 is increased. It is possible to reduce the height of the high frequency module 100 in the vertical direction D1. Therefore, the high-frequency module 100 aims to reduce the height of the high-frequency module 100 in the thickness direction D1 of the mounting substrate 9 while reducing the size of the high-frequency module 100 in a plan view from the thickness direction D1 of the mounting substrate 9. Is possible.
  • the high frequency module 100 further includes a resin layer 5 and a shield layer 6.
  • the resin layer 5 is arranged on the first main surface 91 of the mounting substrate 9.
  • the resin layer 5 covers the outer peripheral surface 13 of the first electronic component 1 and the outer peripheral surface 23 of the second electronic component 2.
  • the shield layer 6 is one of the stack structures 10 having a main surface 51 of the resin layer 5 opposite to the mounting substrate 9 side, and a plurality of electronic components 7 including the first electronic component 1 and the second electronic component 2. It covers the part and.
  • the main surface 71 see FIG. 2) of the electronic component 7 farthest from the mounting board 9 on the side opposite to the mounting board 9 side is in contact with the shield layer 6.
  • the main surface 71 of the electronic component 7 farthest from the mounting board 9 among the plurality of electronic components 7 in the stack structure 10 is the main surface 21 of the second electronic component 2.
  • the high-frequency module 100 according to the first embodiment can easily dissipate heat generated in the electronic component 7 farthest from the mounting board 9 among the plurality of electronic components 7 in the stack structure 10 through the shield layer 6. Further, in the high frequency module 100 according to the first embodiment, the heat generated in the electronic component 7 farthest from the mounting board 9 among the plurality of electronic components 7 in the stack structure 10 is mounted on the mounting board 9 (the electronic component 7 (). It becomes difficult for heat to be transferred to the first electronic component 1) or the like.
  • the electronic component 7 farthest from the mounting board 9 is a transmission system component (second electron configured by the third transmission filter 133). Part 2).
  • the high frequency module 100 it is possible to suppress the temperature rise of the second electronic component 2 which is a transmission system component (transmission filter 133) that generates heat more easily than the reception system circuit component (reception filter 173). It becomes.
  • the first electronic component 1 is a reception filter 173 whose pass band is the reception band of a predetermined communication band (third communication band).
  • the second electronic component 2 is a transmission filter 133 having a transmission band of the predetermined communication band (third communication band) as a pass band.
  • the main surface 21 of the second electronic component 2 is a rough surface.
  • the high frequency module 100 can improve the adhesion between the main surface 21 of the second electronic component 2 and the shield layer 6.
  • the communication device 300 includes a signal processing circuit 301 and a high frequency module 100.
  • the signal processing circuit 301 is connected to the high frequency module 100.
  • the communication device 300 since the communication device 300 according to the first embodiment includes the high frequency module 100, it is possible to reduce the height.
  • the plurality of electronic components constituting the signal processing circuit 301 may be mounted on, for example, the above-mentioned circuit board, or a circuit board (first circuit board) different from the circuit board (first circuit board) on which the high frequency module 100 is mounted. It may be mounted on the second circuit board).
  • the high frequency module 100a according to the second embodiment is different from the high frequency module 100 according to the first embodiment in that the first electronic component 1 is an IC chip 108. Further, the high frequency module 100a is different from the high frequency module 100 according to the first embodiment in that it includes a plurality of (for example, two) second electronic components 2 arranged on the first electronic component 1.
  • the outer size of the first electronic component 1 is larger than the outer size of the two second electronic components 2 in a plan view from the thickness direction D1 of the mounting substrate 9.
  • the two second electronic components 2 are arranged on one first electronic component 1.
  • the two second electronic components 2 are arranged on the main surface 11 on the side opposite to the mounting board 9 side in the one first electronic component 1.
  • all of the two second electronic components 2 overlap with a part of the main surface 11 of the first electronic component 1 in a plan view from the thickness direction D1 of the mounting substrate 9.
  • One of the second electronic components 2 of the two second electronic components 2 is the third transmission filter 133, and the other second electronic component 2 is the second transmission filter 132.
  • the two second electronic components 2 are separated from the shield layer 6 in the direction along the thickness direction D1 of the mounting substrate 9 and are not in contact with the shield layer 6.
  • a part of the resin layer 5 is interposed between the main surface 21 of the two second electronic components 2 and the shield layer 6.
  • Each of the two second electronic components 2 has a plurality of external electrodes 25 (in FIG. 4, only one of the plurality of external electrodes 25 is visible for each of the two second electronic components 2).
  • the plurality of external electrodes 25 include a ground electrode 26.
  • the two second electronic components 2 are arranged on the main surface 11 of the first electronic component 1 so that the plurality of external electrodes 25 are located on the shield layer 6 side in the thickness direction D1 of the mounting substrate 9.
  • the two second electronic components 2 are joined to the main surface 11 of the first electronic component 1.
  • the high frequency module 100a includes a bonding wire W20 that connects the external electrode 25 of the second electronic component 2 and the mounting substrate 9.
  • the bonding wire W20 is a thin metal wire.
  • the material of the bonding wire W20 is, for example, gold, an aluminum alloy or copper.
  • the high frequency module 100a includes a first wire W21 and a second wire W22.
  • the ground electrode 26 of the second electronic component 2 is connected to the mounting substrate 9 via the first wire W21, a part of the shield layer 6, and the second wire W22.
  • the first wire W21 is linear.
  • the first wire W21 is, for example, a thin metal wire having the same wire diameter as the bonding wire W20.
  • the first wire W21 connects the ground electrode 26 of the second electronic component 2 and the shield layer 6.
  • the second wire W22 is linear.
  • the second wire W22 is a thin metal wire having the same wire diameter as the first wire W21.
  • the second wire W22 connects the shield layer 6 and the mounting board 9.
  • the materials of the first wire W21 and the second wire W22 are the same.
  • the materials of the first wire W21 and the second wire W22 are, for example, the same as the materials of the bonding wire W20.
  • the IC chip 108 includes an IPD (Integrated Passive Device).
  • the IPD is an LC filter provided in the transmission path of the high frequency module 100a, and is, for example, an LC filter for harmonic rejection provided in the transmission path including the third transmission filter 133 in the high frequency module 100a.
  • This LC filter is, for example, a filter that attenuates at least one of a second harmonic and a third harmonic of a transmission signal (high frequency signal) of the third communication band that passes through the third transmission filter 133.
  • the IC chip 108 includes a first switch 104, a second switch 105, and a third switch 106.
  • the high frequency module 100a includes a mounting board 9, a first electronic component 1, and a second electronic component 2.
  • the mounting board 9 has a first main surface 91 and a second main surface 92 facing each other.
  • the first electronic component 1 is mounted on the first main surface 91 of the mounting board 9.
  • the second electronic component 2 is arranged on the first electronic component 1.
  • the first main surface 91 of the mounting board 9 has a recess 911.
  • the first electronic component 1 is mounted in the recess 911 on the first main surface 91 of the mounting board 9. This makes it possible to reduce the height of the high frequency module 100a according to the second embodiment.
  • the high frequency module 100a has a configuration including a first electronic component 1 and a second electronic component 2 arranged on the first electronic component 1, and the thickness direction D1 of the mounting substrate 9 is provided. It is possible to reduce the height of the high frequency module 100a in the above.
  • the high frequency module 100a since the plurality of second electronic components 2 are arranged on the main surface 11 of one first electronic component 1, the high frequency module 100a in a plan view from the thickness direction D1 of the mounting substrate 9 It is possible to reduce the size of the external size of the module.
  • the linear first wire W21 connects the ground electrode 26 of the second electronic component 2 and the shield layer 6, and the linear second wire W22 connects the shield layer 6 and the mounting substrate. It is connected to 9.
  • the high frequency module 100a can connect the ground electrode 26 of the second electronic component 2 to the mounting substrate 9 without going through the first electronic component 1, and can also connect the ground electrode 26 to the shield layer 6. ..
  • the high frequency module 100b according to the third embodiment is different from the high frequency module 100 according to the first embodiment in that the first electronic component 1 is a power amplifier 111. Further, the high frequency module 100b is different from the high frequency module 100 according to the first embodiment in that the second electronic component 2 is the controller 115.
  • the outer size of the second electronic component 2 is smaller than the outer size of the first electronic component 1 in a plan view from the thickness direction D1 of the mounting substrate 9.
  • the entire second electronic component 2 overlaps a part of the main surface 11 of the first electronic component 1 in a plan view from the thickness direction D1 of the mounting substrate 9.
  • the second electronic component 2 is separated from the shield layer 6 in the direction along the thickness direction D1 of the mounting substrate 9 and is not in contact with the shield layer 6.
  • a part of the resin layer 5 is interposed between the main surface 21 of the second electronic component 2 and the shield layer 6.
  • the second electronic component 2 has a plurality of external electrodes 25 (in FIG. 5, only one of the plurality of external electrodes 25 is visible).
  • the second electronic component 2 is arranged on the main surface 11 of the first electronic component 1 so that the plurality of external electrodes 25 are located on the shield layer 6 side in the thickness direction D1 of the mounting substrate 9.
  • the second electronic component 2 is joined to the main surface 11 of the first electronic component 1.
  • the high frequency module 100b includes a plurality of bonding wires W20 connecting the plurality of external electrodes 25 of the second electronic component 2 and the mounting substrate 9.
  • Each of the plurality of bonding wires W20 is a thin metal wire.
  • the material of each bonding wire W20 is, for example, gold, aluminum alloy or copper.
  • the high frequency module 100b includes a mounting board 9, a first electronic component 1, and a second electronic component 2.
  • the mounting board 9 has a first main surface 91 and a second main surface 92 facing each other.
  • the first electronic component 1 is mounted on the first main surface 91 of the mounting board 9.
  • the second electronic component 2 is arranged on the first electronic component 1.
  • the first main surface 91 of the mounting board 9 has a recess 911.
  • the first electronic component 1 is mounted in the recess 911 on the first main surface 91 of the mounting board 9. This makes it possible to reduce the height of the high frequency module 100b according to the third embodiment.
  • the high frequency module 100b has a configuration including a first electronic component 1 and a second electronic component 2 arranged on the first electronic component 1, and the thickness direction D1 of the mounting substrate 9 is provided. It is possible to reduce the height of the high frequency module 100b in the above.
  • the outer size of the second electronic component 2 is smaller than the outer size of the first electronic component 1 in a plan view from the thickness direction D1 of the mounting substrate 9.
  • the high frequency module 100b has a high frequency module 100b as compared with the case where the external size of the second electronic component 2 is the same as the external size of the first electronic component 1 or larger than the external size of the first electronic component 1.
  • the bonding wire W20 can be stably bonded to the external electrode 25 of the second electronic component 2.
  • the mounting board 9 has a heat-dissipating conductor formed along the thickness direction D1 of the mounting board 9 in a region overlapping the power amplifier 111 in the thickness direction D1.
  • the high frequency module 100c according to the fourth embodiment will be described with reference to FIG. Regarding the high frequency module 100c according to the fourth embodiment, the same components as the high frequency module 100 according to the first embodiment are designated by the same reference numerals and the description thereof will be omitted.
  • the IC chip 109 including the first switch 104, the second switch 105, the third switch 106, and the low noise amplifier 121 is mounted on the second main surface 92 of the mounting board 9. Therefore, it is different from the high frequency module 100 according to the first embodiment.
  • the IC chip 109 constitutes the fifth electronic component 205 mounted on the second main surface 92 of the mounting board 9. That is, in the high frequency module 100c, the fifth electronic component 205 is mounted on the second main surface 92 of the mounting board 9. "The fifth electronic component 205 is mounted on the second main surface 92 of the mounting board 9" means that the fifth electronic component 205 is arranged on the second main surface 92 of the mounting board 9 (mechanically).
  • the high frequency module 100c is arranged on the second main surface 92 of the mounting board 9 separately from the resin layer 5 (hereinafter, also referred to as the first resin layer 5) arranged on the first main surface 91 of the mounting board 9. It is different from the high frequency module 100 according to the first embodiment in that the resin layer 206 (hereinafter, also referred to as the second resin layer 206) is further provided.
  • the material of the plurality of external connection terminals 8 is, for example, a metal (for example, copper, copper alloy, etc.).
  • Each of the plurality of external connection terminals 8 is a columnar electrode.
  • the columnar electrode is, for example, a columnar electrode.
  • the plurality of external connection terminals 8 are bonded to an appropriate conductor portion of the mounting substrate 9 by, for example, solder, but the present invention is not limited to this, and for example, a conductive adhesive (for example, a conductive paste) is used. It may be joined by soldering, or it may be directly joined.
  • the fifth electronic component 205 is mounted on the second main surface 92 of the mounting board 9.
  • the fifth electronic component 205 has a plurality of external electrodes 215 connected to the second main surface 92 of the mounting substrate 9.
  • Each of the plurality of external electrodes 215 is a bump having conductivity.
  • the second resin layer 206 covers the outer peripheral surface 253 of the fifth electronic component 205 mounted on the second main surface 92 of the mounting board 9, and the outer peripheral surface of each of the plurality of external connection terminals 8.
  • the second resin layer 206 contains a resin (for example, an epoxy resin).
  • the second resin layer 206 may contain a filler in addition to the resin.
  • the material of the second resin layer 206 may be the same material as the material of the first resin layer 5, or may be a different material.
  • the second resin layer 206 does not cover the main surface 251 on the side opposite to the mounting board 9 side in the fifth electronic component 205. Further, the second resin layer 206 does not cover the tip surface 800 on the side opposite to the mounting board 9 side in the plurality of external connection terminals 8.
  • the main surface 251 of the fifth electronic component 205, the tip surface 800 of the plurality of external connection terminals 8, and the main surface 261 of the second resin layer 206 opposite to the mounting board 9 side are omitted. It is flush.
  • the shield layer 6 also covers the outer peripheral surface 263 of the second resin layer 206.
  • the high frequency module 100c has a thinner mounting substrate 9 than the high frequency module 100 according to the first embodiment.
  • the depth of the first recess 911 is shallower than that of the high frequency module 100 according to the first embodiment.
  • the depth of the second recess 912 is shallower than that of the high frequency module 100 according to the first embodiment.
  • the depth of the first recess 911 is substantially the same as the thickness of the plurality of external electrodes 15 of the first electronic component 1.
  • the depth of the second recess 912 is substantially the same as the thickness of the plurality of external electrodes 35 of the third electronic component 3.
  • the high frequency module 100c according to the fourth embodiment includes a mounting board 9, a first electronic component 1, and a second electronic component 2.
  • the mounting board 9 has a first main surface 91 and a second main surface 92 facing each other.
  • the first electronic component 1 is mounted on the first main surface 91 of the mounting board 9.
  • the second electronic component 2 is arranged on the first electronic component 1.
  • the first main surface 91 of the mounting board 9 has a recess 911.
  • the first electronic component 1 is mounted in the recess 911 on the first main surface 91 of the mounting board 9. This makes it possible to reduce the height of the high frequency module 100c according to the fourth embodiment.
  • the high frequency module 100c has a configuration including the first electronic component 1 and the second electronic component 2 arranged on the first electronic component 1, and the thickness direction D1 of the mounting substrate 9 is provided. It is possible to reduce the height of the high frequency module 100c in the above.
  • the high frequency module 100c the first electronic component 1 (reception filter 173), the recess 911, and the low noise amplifier 121 included in the fifth electronic component 205 overlap in a plan view from the thickness direction D1 of the mounting substrate 9.
  • the high frequency module 100c can shorten the length of the wiring between the reception filter 173 and the low noise amplifier 121.
  • the high frequency module 100c can reduce the stray capacitance due to the wiring between the reception filter 173 and the low noise amplifier 121, and improve at least one of the filter characteristics of the reception filter 173 and the NF (Noise Figure) of the low noise amplifier 121. It becomes possible.
  • the third electronic component 3 (reception filter 171), the second recess 912, and the low noise amplifier 121 included in the fifth electronic component 205 are arranged in a plan view from the thickness direction D1 of the mounting substrate 9. Overlap. As a result, the high frequency module 100c can shorten the length of the wiring between the reception filter 171 and the low noise amplifier 121. As a result, the high frequency module 100c can reduce the stray capacitance due to the wiring between the reception filter 171 and the low noise amplifier 121, and can improve at least one of the filter characteristics of the reception filter 171 and the NF of the low noise amplifier 121. Become.
  • the high frequency module 100d according to the fifth embodiment is different from the high frequency module 100c according to the fourth embodiment in that a plurality of external connection terminals 8 are ball bumps. Further, the high frequency module 100d according to the fifth embodiment is different from the high frequency module 100c according to the fourth embodiment in that the second resin layer 206 of the high frequency module 100c according to the fourth embodiment is not provided.
  • the high frequency module 100d according to the fifth embodiment is provided with an underfill provided in a gap between the fifth electronic component 205 mounted on the second main surface 92 of the mounting board 9 and the second main surface 92 of the mounting board 9. It may be provided with a part.
  • the material of the ball bumps constituting each of the plurality of external connection terminals 8 is, for example, gold, copper, solder, or the like.
  • the plurality of external connection terminals 8 may be a mixture of an external connection terminal 8 composed of ball bumps and an external connection terminal 8 composed of columnar electrodes.
  • the first electronic component 1 is mounted in the recess 911 on the first main surface 91 of the mounting board 9, similarly to the high frequency module 100c according to the fourth embodiment.
  • the high frequency module 100d according to the fifth embodiment has a configuration including the first electronic component 1 and the second electronic component 2 arranged on the first electronic component 1, and has a high frequency in the thickness direction D1 of the mounting substrate 9. It is possible to reduce the height of the module 100d.
  • the high frequency module 100e has a deeper first recess 911 than the high frequency module 100c according to the fourth embodiment.
  • the depth of the second recess 912 is deeper than that of the high frequency module 100c according to the fourth embodiment.
  • the depth of the first recess 911 is larger than the thickness of the plurality of external electrodes 15 of the first electronic component 1.
  • the depth of the first recess 911 is half the maximum thickness of the mounting substrate 9, but is not limited to this.
  • the depth of the second recess 912 is larger than the thickness of the plurality of external electrodes 35 of the third electronic component 3.
  • the depth of the second recess 912 is half the maximum thickness of the mounting substrate 9, but is not limited to this.
  • the high frequency module 100e according to the sixth embodiment can be made lower than the high frequency module 100c according to the fourth embodiment.
  • the high frequency module 100f according to the seventh embodiment will be described with reference to FIG. Regarding the high frequency module 100f according to the seventh embodiment, the same components as the high frequency module 100 according to the first embodiment are designated by the same reference numerals and the description thereof will be omitted.
  • the high frequency module 100f is different from the high frequency module 100 according to the first embodiment in that the first electronic component 1 is configured by the low noise amplifier 121 and the second electronic component 2 is configured by the third switch 106.
  • the high frequency module 100f according to the seventh embodiment has the first electronic component 1 mounted in the recess 911 on the first main surface 91 of the mounting substrate 9, so that the height can be reduced. It is possible to plan.
  • the second electronic component 2 may be an IC chip including the third switch 106 and the IPD constituting the input matching circuit 123.
  • the resin layer 5 is not limited to the case where the entire outer peripheral surface 13 of the first electronic component 1 is covered, but at least a part of the outer peripheral surface 13. It suffices to cover. Further, the resin layer 5 is not limited to the case where the entire outer peripheral surface 23 of the second electronic component 2 is covered, and may cover at least a part of the outer peripheral surface 23. Further, the resin layer 5 is not limited to the case where the entire outer peripheral surface 33 of the third electronic component 3 is covered, and may cover at least a part of the outer peripheral surface 33. Further, the resin layer 5 is not limited to the case where the entire outer peripheral surface 43 of the fourth electronic component 4 is covered, and may cover at least a part of the outer peripheral surface 43.
  • the shield layer 6 is not limited to the case where the entire main surface 51 of the resin layer 5 is covered, but the main surface 51 of the resin layer 5 is covered. It suffices to cover at least a part of. Further, in the high frequency modules 100, 100c, 100d, 100e, and 100f, the shield layer 6 is not limited to the case where the entire main surface 21 of the second electronic component 2 is covered, but the main surface 21 of the second electronic component 2 is covered. It suffices to cover at least a part of.
  • the shield layer 6 is not limited to the case where the shield layer 6 covers the entire main surface 41 of the fourth electronic component 4, and the fourth electronic component 4 is not limited to the case where the shield layer 6 covers the entire main surface 41 of the fourth electronic component 4. It suffices to cover at least a part of the main surface 41 of the above.
  • each of the plurality of transmission filters 131, 132, 133 and the plurality of reception filters 171, 172, 173 is not limited to the surface acoustic wave filter, and may be, for example, a BAW (Bulk Acoustic Wave) filter.
  • the resonator in the BAW filter is, for example, FBAR (Film Bulk Acoustic Resonator) or SMR (Solidly Mounted Resonator).
  • each of the plurality of transmission filters 131, 132, 133 and the plurality of reception filters 171, 172, 173 is not limited to the ladder type filter, and may be, for example, a longitudinally coupled resonator type elastic surface wave filter.
  • the above-mentioned elastic wave filter is an elastic wave filter that utilizes a surface acoustic wave or a bulk elastic wave, but is not limited to this, and may be, for example, an elastic wave filter that utilizes an elastic boundary wave, a plate wave, or the like. good.
  • the transmission circuit component is not limited to the transmission filter 133, and is, for example, a transmission filter 131, a transmission filter 132, a first power amplifier 111, a second power amplifier 112, or the like. It may be the second switch 105.
  • the first electronic component 1 has a reception band of a communication band different from the communication band including the pass band of the transmission filter 133 constituting the second electronic component 2 as the transmission band. It may be a reception filter as a pass band. In this case, since the communication bands of the first electronic component 1 and the second electronic component 2 are different from each other, the isolation between the first electronic component 1 and the second electronic component 2 can be improved.
  • the third electronic component 3 has a reception band of a communication band different from the communication band including the pass band of the transmission filter 131 constituting the fourth electronic component 4 as the transmission band. It may be a reception filter as a pass band. In this case, since the communication bands of the third electronic component 3 and the fourth electronic component 4 are different from each other, the isolation between the third electronic component 3 and the fourth electronic component 4 can be improved.
  • the stack structure 10 does not have to be a configuration in which a plurality of electronic components 7 are stacked, and is not limited to a configuration in which two electronic components 7 are stacked, but a configuration in which three or more electronic components 7 are stacked. May be good.
  • each of the first electronic component 1 and the second electronic component 2 may be a duplexer.
  • the entire first electronic component 1 may be configured to overlap the entire recess 911, or a part of the first electronic component 1 may be formed in the recess 911. It may be a configuration that overlaps all.
  • the circuit configuration of the high frequency modules 100 to 100f is not limited to the example of FIG. 3 described above. Further, the high frequency modules 100 to 100f may have, for example, a high frequency front end circuit corresponding to MIMO (Multi Input Multi Output) as a circuit configuration.
  • MIMO Multi Input Multi Output
  • the communication device 300 may include any one of the high frequency modules 100a, 100b, 100c, 100d, 100e, and 100f instead of the high frequency module 100.
  • the high frequency module (100; 100a; 100b; 100c; 100d; 100e; 100f) includes a mounting substrate (9), a first electronic component (1), a second electronic component (2), and the like.
  • the mounting board (9) has a first main surface (91) and a second main surface (92) facing each other.
  • the first electronic component (1) is mounted on the first main surface (91) of the mounting board (9).
  • the second electronic component (2) is arranged on the first electronic component (1).
  • the first main surface (91) of the mounting substrate (9) has a recess (911).
  • the first electronic component (1) is mounted in the recess (911) on the first main surface (91) of the mounting board (9).
  • the high frequency module (100; 100a; 100b; 100c; 100d; 100e; 100f) according to the first aspect can reduce the height.
  • the high frequency module (100; 100c; 100d; 100e; 100f) according to the second aspect further includes a resin layer (5) and a shield layer (6) in the first aspect.
  • the resin layer (5) is arranged on the first main surface (91) of the mounting substrate (9).
  • the resin layer (5) covers at least a part of the outer peripheral surface (13) of the first electronic component (1) and the outer peripheral surface (23) of the second electronic component (2).
  • the shield layer (6) includes at least a part of the main surface (51) of the resin layer (5) opposite to the mounting substrate (9) side, and the first electronic component (1) and the second electronic component (2). It covers a part of a stack structure (10) having a plurality of electronic components (7) including and.
  • the main surface (71) of the electronic component (7) farthest from the mounting board (9) opposite to the mounting board (9) side is a shield layer. It is in contact with (6).
  • the high frequency module (100; 100c; 100d; 100e; 100f) according to the second aspect is the electronic component (7) farthest from the mounting substrate (9) among the plurality of electronic components (7) in the stack structure (10).
  • the heat generated in the above can be easily dissipated through the shield layer (6).
  • the electronic component (7) farthest from the mounting board (9) among the plurality of electronic components (7) is transmitted. It is a system circuit component.
  • the high frequency module (100; 100c; 100d; 100e) according to the third aspect, it is possible to suppress the temperature rise of the transmission system circuit component.
  • the electronic component (7) farthest from the mounting substrate (9) among the plurality of electronic components (7) is the first. 2 Electronic component (2).
  • the first electronic component (1) is a reception filter (173).
  • the second electronic component (2) is a transmission filter (133).
  • the high frequency module (100; 100c; 100d; 100e) can shorten the length of the wiring between the transmission filter (133) and the reception filter (173).
  • the high frequency module (100; 100c; 100d; 100e) can reduce the stray capacitance due to the wiring between the transmission filter (133) and the reception filter (173), and the filter characteristics of the transmission filter (133) and the reception filter. It is possible to improve the filter characteristics of (173).
  • the first electronic component (1) is a predetermined communication band (third communication band).
  • the second electronic component (2) is a transmission filter (133) whose pass band is the transmission band of the predetermined communication band.
  • the high frequency module (100; 100c; 100d; 100e) can shorten the length of the wiring between the transmission filter (133) and the reception filter (173). Thereby, the high frequency module (100; 100c; 100d; 100e) can reduce the stray capacitance due to the wiring between the transmission filter (133) and the reception filter (173), for example, the transmission filter (131) and the transmission filter (131).
  • FDD Frequency Division Duplex
  • each of the receiving filter (173) and the transmitting filter (133) is an elastic wave filter.
  • the first electronic component (1) is an IC chip (108).
  • the second electronic component (2) is a transmission filter (133).
  • the IC chip (108) includes the IPD.
  • the high frequency module (100a) includes a plurality of second electronic components (2) in the seventh or eighth aspect.
  • a plurality of second electronic components (2) are arranged on one first electronic component (1).
  • the high frequency module (100a) according to the ninth aspect can reduce the external size of the high frequency module (100a) in a plan view from the thickness direction (D1) of the mounting substrate (9).
  • the high frequency module (100a) comprises a resin layer (5), a shield layer (6), a first wire (W21), and a second wire (W22). Further prepare.
  • the resin layer (5) is arranged on the first main surface (91) of the mounting substrate (9).
  • the resin layer (5) covers at least a part of the outer peripheral surface (13) of the first electronic component (1) and the outer peripheral surface (23) of the second electronic component (2).
  • the shield layer (6) covers at least a part of the main surface (51) of the resin layer (5) opposite to the mounting substrate (9) side.
  • the first wire (W21) is linear.
  • the first wire (W21) connects the ground electrode (26) of the second electronic component (2) and the shield layer (6).
  • the second wire (W22) is linear.
  • the second wire (W22) connects the shield layer (6) and the mounting board (9).
  • the ground electrode (26) of the second electronic component (2) can be connected to the mounting substrate (9) without going through the first electronic component (1), and the ground electrode can be connected. (26) can also be connected to the shield layer (6).
  • the high frequency module (100; 100c; 100d; 100e) according to the eleventh aspect further includes a first power amplifier (111) and a second power amplifier (112) in the second or third aspect.
  • the first power amplifier (111) corresponds to the first power class.
  • the second power amplifier (112) corresponds to the second power class.
  • the maximum output power of the second power class is larger than the maximum output power of the first power class.
  • the second electronic component (2) is a transmission filter (133) connected to the second power amplifier (112).
  • the high frequency module (100; 100c; 100d; 100e) is a second power amplifier (112) having a larger maximum output power among the first power amplifier (111) and the second power amplifier (112). It is possible to suppress the temperature rise of the connected transmission filter (133).
  • the first electronic component (1) is a power amplifier (111; 112).
  • the second electronic component (2) is a controller (115) that controls a power amplifier (111; 112).
  • the high frequency module (100b) can shorten the wiring length between the power amplifier (111; 112) and the controller (115), and the heat of the power amplifier (111; 112). Can be easily dissipated through the mounting board (9).
  • the high frequency module (100f) further includes a plurality of reception filters (171, 172, 173) in the first aspect.
  • the plurality of reception filters (171, 172, 173) set the reception band of the communication band different from each other as the pass band.
  • the first electronic component (1) is a low noise amplifier (121).
  • the second electronic component (2) is a switch (third switch 106).
  • the switch (third switch 106) is connected to a plurality of selection terminals (161, 162, 163) connected to a plurality of reception filters (171, 172, 173) and a plurality of low noise amplifiers (121). It has a common terminal (160) that can be connected to a selection terminal (161, 162, 163).
  • the high frequency module (100f) can reduce the stray capacitance due to the wiring on the input terminal side of the low noise amplifier (121), and can improve the NF of the low noise amplifier (121).
  • the thickness direction (D1) of the mounting substrate (9) The external size of the first electronic component (1) is smaller than the size of the recess (911), and the entire first electronic component (1) overlaps a part of the recess (911).
  • the high frequency module (100; 100a; 100b; 100c; 100d; 100e; 100f) according to the fourteenth aspect, it becomes easy to mount the first electronic component (1) in the recess (911) in the mounting substrate (9). , The reliability can be improved.
  • the first electronic component (1) is a mounting substrate (1). It has a plurality of external electrodes (15) connected to the first main surface (91) of 9). A plurality of external electrodes (15) are located in the recess (911).
  • the high frequency module (100; 100a; 100b; 100c; 100d; 100e; 100f) according to the fifteenth aspect is the second electronic component (2) in a plan view from the thickness direction (D1) of the mounting substrate (9).
  • the degree of freedom in the external size of is increased.
  • the high frequency module (100; 100a; 100b; 100c; 100d; 100e; 100f) is the first main surface (91) of the mounting substrate (9) in any one of the first to fifteenth aspects.
  • a fourth electronic component (4) arranged on the third electronic component (3).
  • the first main surface (91) of the mounting substrate (9) further has a second recess (912) in addition to the first recess (911) which is a recess (911).
  • the third electronic component (3) is mounted on the second recess (912) on the first main surface (91) of the mounting board (9).
  • the high frequency module (100; 100a; 100b; 100c; 100d; 100e; 100f) according to the sixteenth aspect has an outer shape of the mounting substrate (9) in a plan view from the thickness direction (D1) of the mounting substrate (9). It is possible to further reduce the size.
  • the high frequency module (100; 100a; 100b; 100c; 100d; 100e; 100f) according to the 17th aspect further includes a plurality of external connection terminals (8) in any one of the 1st to 16th aspects.
  • the high frequency module (100c; 100d; 100e) according to the eighteenth aspect further includes a fifth electronic component (205) in the seventeenth aspect.
  • the fifth electronic component (205) is mounted on the second main surface (92) of the mounting board (9).
  • the high frequency module (100c; 100d; 100e) aims to further reduce the external size of the mounting substrate (9) in a plan view from the thickness direction (D1) of the mounting substrate (9). It becomes possible.
  • the mounting substrate (9) is a multilayer substrate.
  • the multilayer board includes a plurality of dielectric layers (97) laminated in the thickness direction (D1) of the mounting board (9).
  • the recess (911) is formed over at least one or more dielectric layers (97) among the plurality of dielectric layers (97) in the thickness direction (D1) of the mounting substrate (9).
  • the depth of the recess (911) of the mounting substrate (9) is set to the depth of the concave portion (911) of the plurality of dielectric layers (97). It can be determined by the number of dielectric layers (97) having through holes for forming the recesses (911).
  • the communication device (300) includes a high frequency module (100; 100a; 100b; 100c; 100d; 100e; 100f) according to any one of the first to nineteenth aspects, and a signal processing circuit (301). , Equipped with.
  • the signal processing circuit (301) is connected to a high frequency module (100; 100a; 100b; 100c; 100d; 100e; 100f).
  • the communication device (300) according to the twentieth aspect can be made low in height.

Abstract

The present invention lowers the profile of a high frequency module. A high frequency module (100) is provided with a mounting substrate (9), a first electronic component (1), and a second electronic component (2). The mounting substrate (9) has a first main surface (91) and a second main surface (92) opposing each other. The first electronic component (1) is mounted on the first main surface (91) of the mounting substrate (9). The second electronic component (2) is disposed over the first electronic component (1). The first main surface (91) of the mounting substrate (9) has a recess (911). The first electronic component (1) is mounted in the recess (911) of the first main surface (91) of the mounting substrate (9).

Description

高周波モジュール及び通信装置High frequency module and communication equipment
　本発明は、一般に高周波モジュール及び通信装置に関し、より詳細には、実装基板を備える高周波モジュール、及び、それを備える通信装置に関する。 The present invention generally relates to a high frequency module and a communication device, and more particularly to a high frequency module including a mounting board and a communication device including the high frequency module.
　特許文献１には、実装基板と、実装基板上に配置されている第１フィルタ（第１電子部品）と、第１フィルタ上に配置されている半導体制御ＩＣ（第２電子部品）と、を備える高周波モジュールが開示されている。 Patent Document 1 describes a mounting board, a first filter (first electronic component) arranged on the mounting board, and a semiconductor control IC (second electronic component) arranged on the first filter. The high frequency module provided is disclosed.
国際公開第２０２０／１７９５４１号International Publication No. 2020/179541
　特許文献１に開示された高周波モジュールでは、実装基板に配置された第１電子部品上に第２電子部品が配置されているので、実装基板の厚さ方向における高周波モジュールの低背化を実現することが難しい場合がある。 In the high-frequency module disclosed in Patent Document 1, since the second electronic component is arranged on the first electronic component arranged on the mounting board, the height of the high-frequency module can be reduced in the thickness direction of the mounting board. Can be difficult.
　本発明の目的は、低背化を図ることが可能な高周波モジュール及び通信装置を提供することにある。 An object of the present invention is to provide a high frequency module and a communication device capable of reducing the height.
　本発明の一態様に係る高周波モジュールは、実装基板と、第１電子部品と、第２電子部品と、を備える。前記実装基板は、互いに対向する第１主面及び第２主面を有する。前記第１電子部品は、前記実装基板の前記第１主面に実装されている。前記第２電子部品は、前記第１電子部品上に配置されている。前記実装基板の前記第１主面は、凹部を有する。前記第１電子部品は、前記実装基板の前記第１主面において前記凹部に実装されている。 The high frequency module according to one aspect of the present invention includes a mounting board, a first electronic component, and a second electronic component. The mounting board has a first main surface and a second main surface facing each other. The first electronic component is mounted on the first main surface of the mounting board. The second electronic component is arranged on the first electronic component. The first main surface of the mounting board has a recess. The first electronic component is mounted in the recess on the first main surface of the mounting board.
　本発明の一態様に係る通信装置は、上記高周波モジュールと、信号処理回路と、を備える。前記信号処理回路は、前記高周波モジュールに接続されている。 The communication device according to one aspect of the present invention includes the high frequency module and a signal processing circuit. The signal processing circuit is connected to the high frequency module.
　本発明の上記態様に係る高周波モジュール及び通信装置は、低背化を図ることが可能となる。 The high frequency module and communication device according to the above aspect of the present invention can be reduced in height.
図１は、実施形態１に係る高周波モジュールの断面図である。FIG. 1 is a cross-sectional view of the high frequency module according to the first embodiment. 図２は、同上の高周波モジュールの一部拡大断面図である。FIG. 2 is a partially enlarged cross-sectional view of the same high frequency module. 図３は、同上の高周波モジュールを備える通信装置の回路構成図である。FIG. 3 is a circuit configuration diagram of a communication device including the same high frequency module. 図４は、実施形態２に係る高周波モジュールの断面図である。FIG. 4 is a cross-sectional view of the high frequency module according to the second embodiment. 図５は、実施形態３に係る高周波モジュールの断面図である。FIG. 5 is a cross-sectional view of the high frequency module according to the third embodiment. 図６は、実施形態４に係る高周波モジュールの断面図である。FIG. 6 is a cross-sectional view of the high frequency module according to the fourth embodiment. 図７は、実施形態５に係る高周波モジュールの断面図である。FIG. 7 is a cross-sectional view of the high frequency module according to the fifth embodiment. 図８は、実施形態６に係る高周波モジュールの断面図である。FIG. 8 is a cross-sectional view of the high frequency module according to the sixth embodiment. 図９は、実施形態７に係る高周波モジュールの断面図である。FIG. 9 is a cross-sectional view of the high frequency module according to the seventh embodiment.
　以下の実施形態等において参照する図１、２、４～９は、いずれも模式的な図であり、図中の各構成要素の大きさや厚さそれぞれの比が、必ずしも実際の寸法比を反映しているとは限らない。 FIGS. 1, 2, 4 to 9 referred to in the following embodiments and the like are schematic views, and the ratio of the size and the thickness of each component in the figure does not necessarily reflect the actual dimensional ratio. Not always.
　（実施形態１）
　実施形態１に係る高周波モジュール１００は、例えば、図１及び２に示すように、実装基板９と、第１電子部品１と、第２電子部品２と、を備える。実装基板９は、互いに対向する第１主面９１及び第２主面９２を有する。第１電子部品１は、実装基板９の第１主面９１に実装されている。第２電子部品２は、第１電子部品１上に配置されている。ここで、第２電子部品２は、実装基板９の厚さ方向Ｄ１において第１電子部品１における実装基板９側とは反対側の主面１１に配置されている。 (Embodiment 1)
The high-frequency module 100 according to the first embodiment includes, for example, a mounting board 9, a first electronic component 1, and a second electronic component 2, as shown in FIGS. 1 and 2. The mounting board 9 has a first main surface 91 and a second main surface 92 facing each other. The first electronic component 1 is mounted on the first main surface 91 of the mounting board 9. The second electronic component 2 is arranged on the first electronic component 1. Here, the second electronic component 2 is arranged on the main surface 11 on the side opposite to the mounting board 9 side of the first electronic component 1 in the thickness direction D1 of the mounting board 9.
　また、高周波モジュール１００は、樹脂層５と、シールド層６と、を更に備える。樹脂層５は、実装基板９の第１主面９１に配置されている。樹脂層５は、第１電子部品１の外周面１３及び第２電子部品２の外周面２３を覆っている。シールド層６は、樹脂層５における実装基板９側とは反対側の主面５１と、第１電子部品１と第２電子部品２とを含む複数の電子部品７（図２参照）を有するスタック構造体１０の一部（ここでは、第２電子部品２における実装基板９側とは反対側の主面２１）と、を覆っている。スタック構造体１０は、複数の電子部品７がスタックされている構造体である。 Further, the high frequency module 100 further includes a resin layer 5 and a shield layer 6. The resin layer 5 is arranged on the first main surface 91 of the mounting substrate 9. The resin layer 5 covers the outer peripheral surface 13 of the first electronic component 1 and the outer peripheral surface 23 of the second electronic component 2. The shield layer 6 is a stack having a main surface 51 of the resin layer 5 opposite to the mounting substrate 9 side, and a plurality of electronic components 7 (see FIG. 2) including the first electronic component 1 and the second electronic component 2. It covers a part of the structure 10 (here, the main surface 21 on the side opposite to the mounting board 9 side in the second electronic component 2). The stack structure 10 is a structure in which a plurality of electronic components 7 are stacked.
　また、高周波モジュール１００は、第３電子部品３と、第４電子部品４と、を更に備える。第３電子部品３は、実装基板９の第１主面９１に実装されている。第４電子部品４は、第３電子部品３上に配置されている。第４電子部品４は、実装基板９の厚さ方向Ｄ１において第３電子部品３における実装基板９側とは反対側の主面３１に配置されている。 Further, the high frequency module 100 further includes a third electronic component 3 and a fourth electronic component 4. The third electronic component 3 is mounted on the first main surface 91 of the mounting board 9. The fourth electronic component 4 is arranged on the third electronic component 3. The fourth electronic component 4 is arranged on the main surface 31 of the third electronic component 3 on the side opposite to the mounting board 9 side in the thickness direction D1 of the mounting board 9.
　樹脂層５は、第３電子部品３の外周面３３及び第４電子部品４の外周面４３も覆っている。シールド層６は、第４電子部品４における実装基板９側とは反対側の主面４１を覆っている。 The resin layer 5 also covers the outer peripheral surface 33 of the third electronic component 3 and the outer peripheral surface 43 of the fourth electronic component 4. The shield layer 6 covers the main surface 41 of the fourth electronic component 4 on the side opposite to the mounting board 9 side.
　以下、実施形態１に係る高周波モジュール１００及び通信装置３００について、図１～３を参照して、より詳細に説明する。 Hereinafter, the high frequency module 100 and the communication device 300 according to the first embodiment will be described in more detail with reference to FIGS. 1 to 3.
　（１）高周波モジュール及び通信装置
　（１．１）高周波モジュール及び通信装置の回路構成
　実施形態１に係る高周波モジュール１００及び通信装置３００の回路構成について、図３を参照して説明する。 (1) High Frequency Module and Communication Device (1.1) Circuit Configuration of High Frequency Module and Communication Device The circuit configuration of the high frequency module 100 and communication device 300 according to the first embodiment will be described with reference to FIG.
　高周波モジュール１００は、例えば、通信装置３００に用いられる。通信装置３００は、例えば、携帯電話（例えば、スマートフォン）であるが、これに限らず、例えば、ウェアラブル端末（例えば、スマートウォッチ）であってもよい。高周波モジュール１００は、例えば、４Ｇ（第４世代移動通信）規格、５Ｇ（第５世代移動通信）規格等に対応可能なモジュールである。４Ｇ規格は、例えば、３ＧＰＰ（Third Generation Partnership Project）　ＬＴＥ（Long Term Evolution）規格である。５Ｇ規格は、例えば、５Ｇ　ＮＲ（New Radio）である。高周波モジュール１００は、例えば、キャリアアグリゲーション及びデュアルコネクティビティに対応可能なモジュールである。高周波モジュール１００は、アップリンク（Uplink）で２つの周波数帯域を同時に用いる２アップリンクキャリアアグリゲーションにも対応可能である。 The high frequency module 100 is used, for example, in the communication device 300. The communication device 300 is, for example, a mobile phone (for example, a smartphone), but is not limited to this, and may be, for example, a wearable terminal (for example, a smart watch). The high frequency module 100 is a module capable of supporting, for example, a 4G (4th generation mobile communication) standard, a 5G (5th generation mobile communication) standard, and the like. The 4G standard is, for example, a 3GPP (Third Generation Partnership Project) LTE (Long Term Evolution) standard. The 5G standard is, for example, 5G NR (New Radio). The high frequency module 100 is a module capable of supporting carrier aggregation and dual connectivity, for example. The high frequency module 100 can also support two uplink carrier aggregations that simultaneously use two frequency bands in the uplink.
　高周波モジュール１００は、例えば、信号処理回路３０１から入力された送信信号を増幅してアンテナ３１０に出力できるように構成されている。また、高周波モジュール１００は、アンテナ３１０から入力された受信信号を増幅して信号処理回路３０１に出力できるように構成されている。信号処理回路３０１は、高周波モジュール１００の構成要素ではなく、高周波モジュール１００を備える通信装置３００の構成要素である。実施形態１に係る高周波モジュール１００は、例えば、通信装置３００の備える信号処理回路３０１によって制御される。通信装置３００は、高周波モジュール１００と、信号処理回路３０１と、を備える。通信装置３００は、アンテナ３１０を更に備える。通信装置３００は、高周波モジュール１００が実装された回路基板を更に備える。回路基板は、例えば、プリント配線板である。回路基板は、グランド電位が与えられるグランド電極を有する。 The high frequency module 100 is configured so that, for example, the transmission signal input from the signal processing circuit 301 can be amplified and output to the antenna 310. Further, the high frequency module 100 is configured to amplify the received signal input from the antenna 310 and output it to the signal processing circuit 301. The signal processing circuit 301 is not a component of the high frequency module 100, but a component of the communication device 300 including the high frequency module 100. The high frequency module 100 according to the first embodiment is controlled by, for example, a signal processing circuit 301 included in the communication device 300. The communication device 300 includes a high frequency module 100 and a signal processing circuit 301. The communication device 300 further includes an antenna 310. The communication device 300 further includes a circuit board on which the high frequency module 100 is mounted. The circuit board is, for example, a printed wiring board. The circuit board has a ground electrode to which a ground potential is applied.
　信号処理回路３０１は、例えば、ＲＦ信号処理回路３０２と、ベースバンド信号処理回路３０３と、を含む。ＲＦ信号処理回路３０２は、例えばＲＦＩＣ（Radio Frequency Integrated Circuit）であり、高周波信号に対する信号処理を行う。ＲＦ信号処理回路３０２は、例えば、ベースバンド信号処理回路３０３から出力された高周波信号（送信信号）に対してアップコンバート等の信号処理を行い、信号処理が行われた高周波信号を出力する。また、ＲＦ信号処理回路３０２は、例えば、高周波モジュール１００から出力された高周波信号（受信信号）に対してダウンコンバート等の信号処理を行い、信号処理が行われた高周波信号をベースバンド信号処理回路３０３へ出力する。ベースバンド信号処理回路３０３は、例えばＢＢＩＣ（Baseband Integrated Circuit）である。ベースバンド信号処理回路３０３は、ベースバンド信号からＩ相信号及びＱ相信号を生成する。ベースバンド信号は、例えば、外部から入力される音声信号、画像信号等である。ベースバンド信号処理回路３０３は、Ｉ相信号とＱ相信号とを合成することでＩＱ変調処理を行って、送信信号を出力する。この際、送信信号は、所定周波数の搬送波信号を、当該搬送波信号の周期よりも長い周期で振幅変調した変調信号（ＩＱ信号）として生成される。ベースバンド信号処理回路３０３で処理された受信信号は、例えば、画像信号として画像表示のために、又は、音声信号として通信装置３００のユーザの通話のために使用される。高周波モジュール１００は、アンテナ３１０と信号処理回路３０１のＲＦ信号処理回路３０２との間で高周波信号（受信信号、送信信号）を伝達する。 The signal processing circuit 301 includes, for example, an RF signal processing circuit 302 and a baseband signal processing circuit 303. The RF signal processing circuit 302 is, for example, an RFIC (Radio Frequency Integrated Circuit), and performs signal processing on a high frequency signal. The RF signal processing circuit 302 performs signal processing such as up-conversion on the high frequency signal (transmission signal) output from the baseband signal processing circuit 303, and outputs the signal processed high frequency signal. Further, the RF signal processing circuit 302 performs signal processing such as down-conversion on the high frequency signal (received signal) output from the high frequency module 100, and uses the processed high frequency signal as a baseband signal processing circuit. Output to 303. The baseband signal processing circuit 303 is, for example, a BBIC (Baseband Integrated Circuit). The baseband signal processing circuit 303 generates an I-phase signal and a Q-phase signal from the baseband signal. The baseband signal is, for example, an audio signal, an image signal, or the like input from the outside. The baseband signal processing circuit 303 performs IQ modulation processing by synthesizing an I-phase signal and a Q-phase signal, and outputs a transmission signal. At this time, the transmission signal is generated as a modulation signal (IQ signal) in which a carrier signal having a predetermined frequency is amplitude-modulated with a period longer than the period of the carrier signal. The received signal processed by the baseband signal processing circuit 303 is used, for example, for displaying an image as an image signal or for a call of a user of the communication device 300 as an audio signal. The high frequency module 100 transmits a high frequency signal (received signal, transmitted signal) between the antenna 310 and the RF signal processing circuit 302 of the signal processing circuit 301.
　高周波モジュール１００は、複数（例えば、３つ）の送信フィルタ１３１、１３２、１３３を備える。また、高周波モジュール１００は、複数（例えば、２つ）のパワーアンプ１１１、１１２と、複数（例えば、２つ）の出力整合回路１１３、１１４と、コントローラ１１５と、を備える。また、高周波モジュール１００は、複数（例えば、３つ）の受信フィルタ１７１、１７２、１７３を備える。また、高周波モジュール１００は、ローノイズアンプ１２１と、入力整合回路１２３と、を備える。また、高周波モジュール１００は、第１スイッチ１０４と、第２スイッチ１０５と、第３スイッチ１０６と、を備える。高周波モジュール１００では、受信フィルタ１７３が第１電子部品１（図１参照）を構成し、送信フィルタ１３３が第２電子部品２（図１参照）を構成している。また、高周波モジュール１００では、受信フィルタ１７１が第３電子部品３（図１参照）を構成し、送信フィルタ１３１が第４電子部品４（図１参照）を構成している。 The high frequency module 100 includes a plurality of (for example, three) transmission filters 131, 132, 133. Further, the high frequency module 100 includes a plurality of (for example, two) power amplifiers 111 and 112, a plurality of (for example, two) output matching circuits 113 and 114, and a controller 115. Further, the high frequency module 100 includes a plurality of (for example, three) reception filters 171, 172, and 173. Further, the high frequency module 100 includes a low noise amplifier 121 and an input matching circuit 123. Further, the high frequency module 100 includes a first switch 104, a second switch 105, and a third switch 106. In the high frequency module 100, the reception filter 173 constitutes the first electronic component 1 (see FIG. 1), and the transmission filter 133 constitutes the second electronic component 2 (see FIG. 1). Further, in the high frequency module 100, the reception filter 171 constitutes the third electronic component 3 (see FIG. 1), and the transmission filter 131 constitutes the fourth electronic component 4 (see FIG. 1).
　また、高周波モジュール１００は、複数の外部接続端子８を備えている。複数の外部接続端子８は、アンテナ端子８１と、２つの信号入力端子８２Ａ、８２Ｂと、信号出力端子８３と、制御端子８４と、複数のグランド端子８５（図１参照）と、を含む。複数のグランド端子８５は、通信装置３００の備える上述の回路基板のグランド電極と電気的に接続されてグランド電位が与えられる端子である。 Further, the high frequency module 100 is provided with a plurality of external connection terminals 8. The plurality of external connection terminals 8 include an antenna terminal 81, two signal input terminals 82A and 82B, a signal output terminal 83, a control terminal 84, and a plurality of ground terminals 85 (see FIG. 1). The plurality of ground terminals 85 are terminals that are electrically connected to the ground electrode of the above-mentioned circuit board included in the communication device 300 and are given a ground potential.
　以下、高周波モジュール１００の回路構成について、図３に基づいて、より詳細に説明する。 Hereinafter, the circuit configuration of the high frequency module 100 will be described in more detail with reference to FIG.
　複数の送信フィルタ１３１、１３２、１３３は、互いに異なる周波数帯域を通過帯域とする送信フィルタである。以下では、３つの送信フィルタ１３１、１３２、１３３を区別して説明する場合に、３つの送信フィルタ１３１、１３２、１３３をそれぞれ、第１送信フィルタ１３１、第２送信フィルタ１３２、第３送信フィルタ１３３と称することもある。 The plurality of transmission filters 131, 132, 133 are transmission filters having different frequency bands as pass bands. In the following, when the three transmission filters 131, 132, and 133 are described separately, the three transmission filters 131, 132, and 133 are referred to as the first transmission filter 131, the second transmission filter 132, and the third transmission filter 133, respectively. Sometimes referred to.
　第１送信フィルタ１３１は、例えば、第１通信バンドの送信帯域を通過帯域とするフィルタである。第２送信フィルタ１３２は、例えば、第２通信バンドの送信帯域を通過帯域とするフィルタである。第３送信フィルタ１３３は、例えば、第３通信バンドの送信帯域を通過帯域とするフィルタである。第１通信バンドは、第１送信フィルタ１３１を通る送信信号に対応する。第２通信バンドは、第２送信フィルタ１３２を通る送信信号に対応する。第３通信バンドは、第３送信フィルタ１３３を通る送信信号に対応する。第１通信バンド～第３通信バンドの各々は、例えば、３ＧＰＰ　ＬＴＥ規格の通信バンド又は５Ｇ　ＮＲ規格の通信バンドである。 The first transmission filter 131 is, for example, a filter whose pass band is the transmission band of the first communication band. The second transmission filter 132 is, for example, a filter whose pass band is the transmission band of the second communication band. The third transmission filter 133 is, for example, a filter whose pass band is the transmission band of the third communication band. The first communication band corresponds to a transmission signal passing through the first transmission filter 131. The second communication band corresponds to a transmission signal that passes through the second transmission filter 132. The third communication band corresponds to a transmission signal that passes through the third transmission filter 133. Each of the first communication band to the third communication band is, for example, a 3GPP LTE standard communication band or a 5G NR standard communication band.
　パワーアンプ１１１（以下、第１パワーアンプ１１１ともいう）は、第１入力端子及び第１出力端子を有する。第１パワーアンプ１１１は、第１入力端子に入力された送信信号を増幅して第１出力端子から出力する。第１パワーアンプ１１１の第１入力端子は、信号入力端子８２Ａに接続されている。第１パワーアンプ１１１の第１入力端子は、信号入力端子８２Ａを介して信号処理回路３０１に接続される。信号入力端子８２Ａは、外部回路（例えば、信号処理回路３０１）からの高周波信号（送信信号）を高周波モジュール１００に入力するための端子である。高周波モジュール１００では、第１パワーアンプ１１１の第１出力端子と第１送信フィルタ１３１及び第２送信フィルタ１３２とが出力整合回路１１３（以下、第１出力整合回路１１３ともいう）及び第２スイッチ１０５を介して接続可能となっている。第１パワーアンプ１１１は、例えば、ドライバ段増幅器と、最終段増幅器と、を含む多段増幅器である。第１パワーアンプ１１１では、ドライバ段増幅器の入力端子が信号入力端子８２Ａに接続され、ドライバ段増幅器の出力端子が最終段増幅器の入力端子に接続され、最終段増幅器の出力端子が第１出力整合回路１１３に接続される。第１パワーアンプ１１１は、多段増幅器に限らず、例えば、同相合成増幅器、差動合成増幅器又はドハティ増幅器であってもよい。 The power amplifier 111 (hereinafter, also referred to as a first power amplifier 111) has a first input terminal and a first output terminal. The first power amplifier 111 amplifies the transmission signal input to the first input terminal and outputs it from the first output terminal. The first input terminal of the first power amplifier 111 is connected to the signal input terminal 82A. The first input terminal of the first power amplifier 111 is connected to the signal processing circuit 301 via the signal input terminal 82A. The signal input terminal 82A is a terminal for inputting a high frequency signal (transmission signal) from an external circuit (for example, a signal processing circuit 301) to the high frequency module 100. In the high frequency module 100, the first output terminal of the first power amplifier 111, the first transmission filter 131, and the second transmission filter 132 are an output matching circuit 113 (hereinafter, also referred to as a first output matching circuit 113) and a second switch 105. It is possible to connect via. The first power amplifier 111 is a multi-stage amplifier including, for example, a driver stage amplifier and a final stage amplifier. In the first power amplifier 111, the input terminal of the driver stage amplifier is connected to the signal input terminal 82A, the output terminal of the driver stage amplifier is connected to the input terminal of the final stage amplifier, and the output terminal of the final stage amplifier is matched to the first output. It is connected to the circuit 113. The first power amplifier 111 is not limited to a multi-stage amplifier, and may be, for example, an common mode synthesis amplifier, a differential synthesis amplifier, or a Doherty amplifier.
　パワーアンプ１１２（以下、第２パワーアンプ１１２ともいう）は、第２入力端子及び第２出力端子を有する。第２パワーアンプ１１２は、第２入力端子に入力された送信信号を増幅して第２出力端子から出力する。第２パワーアンプ１１２の第２入力端子は、信号入力端子８２Ｂに接続されている。第２パワーアンプ１１２の第２入力端子は、信号入力端子８２Ｂを介して信号処理回路３０１に接続される。信号入力端子８２Ｂは、外部回路（例えば、信号処理回路３０１）からの高周波信号（送信信号）を高周波モジュール１００に入力するための端子である。高周波モジュール１００では、第２パワーアンプ１１２の第２出力端子と第３送信フィルタ１３３とが出力整合回路１１４（以下、第２出力整合回路１１４ともいう）及び第２スイッチ１０５を介して接続可能となっている。第２パワーアンプ１１２は、例えば、ドライバ段増幅器と、最終段増幅器と、を含む多段増幅器である。第２パワーアンプ１１２では、ドライバ段増幅器の入力端子が信号入力端子８２Ｂに接続され、ドライバ段増幅器の出力端子が最終段増幅器の入力端子に接続され、最終段増幅器の出力端子が第２出力整合回路１１４に接続される。第２パワーアンプ１１２は、多段増幅器に限らず、例えば、同相合成増幅器、差動合成増幅器又はドハティ増幅器であってもよい。 The power amplifier 112 (hereinafter, also referred to as a second power amplifier 112) has a second input terminal and a second output terminal. The second power amplifier 112 amplifies the transmission signal input to the second input terminal and outputs it from the second output terminal. The second input terminal of the second power amplifier 112 is connected to the signal input terminal 82B. The second input terminal of the second power amplifier 112 is connected to the signal processing circuit 301 via the signal input terminal 82B. The signal input terminal 82B is a terminal for inputting a high frequency signal (transmission signal) from an external circuit (for example, a signal processing circuit 301) to the high frequency module 100. In the high frequency module 100, the second output terminal of the second power amplifier 112 and the third transmission filter 133 can be connected via the output matching circuit 114 (hereinafter, also referred to as the second output matching circuit 114) and the second switch 105. It has become. The second power amplifier 112 is a multi-stage amplifier including, for example, a driver stage amplifier and a final stage amplifier. In the second power amplifier 112, the input terminal of the driver stage amplifier is connected to the signal input terminal 82B, the output terminal of the driver stage amplifier is connected to the input terminal of the final stage amplifier, and the output terminal of the final stage amplifier is the second output matching. It is connected to the circuit 114. The second power amplifier 112 is not limited to the multi-stage amplifier, and may be, for example, a common mode synthesis amplifier, a differential synthesis amplifier, or a Doherty amplifier.
　２つのパワーアンプ１１１、１１２は、互いに異なるパワークラスに対応している。「パワークラス」とは、最大出力パワー等で定義される端末（通信装置３００）の出力パワーの分類（User Equipment Power Class）であり、「パワークラス」の次に記載されている数字が小さいほど、高い出力パワーに対応することを示す。例えば、パワークラス　１の最大出力パワー（２９ｄＢｍ）は、パワークラス　２の最大出力パワー（２６ｄＢｍ）よりも大きく、パワークラス　２の最大出力パワー（２６ｄＢｍ）は、パワークラス　３の最大出力パワー（２３ｄＢｍ）よりも大きい。最大出力パワーの測定は、例えば、３ＧＰＰ等によって規定された方法で行われる。第１パワーアンプ１１１は、第１パワークラス（例えば、パワークラス　２又はパワークラス　３）に対応し、第２パワーアンプ１１２は、第２パワークラス（例えば、パワークラス　１）に対応する。第２パワークラスの最大出力パワーは、第１パワークラスの最大出力パワーよりも大きい。 The two power amplifiers 111 and 112 correspond to different power classes. The "power class" is a classification (User Equipment Power Class) of the output power of the terminal (communication device 300) defined by the maximum output power, etc., and the smaller the number listed next to the "power class", the higher the classification. Indicates that it corresponds to the output power. For example, the maximum output power (29 dBm) of the power class 1 is larger than the maximum output power (26 dBm) of the power class 2, and the maximum output power (26 dBm) of the power class 2 is larger than the maximum output power (23 dBm) of the power class 3. The measurement of the maximum output power is performed by a method specified by, for example, 3GPP or the like. The first power amplifier 111 corresponds to the first power class (for example, power class 2 or power class 3), and the second power amplifier 112 corresponds to the second power class (for example, power class 1). The maximum output power of the second power class is larger than the maximum output power of the first power class.
　第１出力整合回路１１３は、第１パワーアンプ１１１の第１出力端子と第２スイッチ１０５との間の信号経路に設けられている。第１出力整合回路１１３は、第１パワーアンプ１１１と第１送信フィルタ１３１及び第２送信フィルタ１３２とのインピーダンス整合をとるための回路である。第１出力整合回路１１３は、例えば、第１パワーアンプ１１１の第１出力端子と第２スイッチ１０５との間に接続された第１インダクタＬ１（図１参照）を含む。第１出力整合回路１１３は、例えば、複数のインダクタ及び複数のキャパシタを含んでもよい。 The first output matching circuit 113 is provided in the signal path between the first output terminal of the first power amplifier 111 and the second switch 105. The first output matching circuit 113 is a circuit for achieving impedance matching between the first power amplifier 111 and the first transmission filter 131 and the second transmission filter 132. The first output matching circuit 113 includes, for example, a first inductor L1 (see FIG. 1) connected between the first output terminal of the first power amplifier 111 and the second switch 105. The first output matching circuit 113 may include, for example, a plurality of inductors and a plurality of capacitors.
　第２出力整合回路１１４は、第２パワーアンプ１１２の第２出力端子と第２スイッチ１０５との間の信号経路に設けられている。第２出力整合回路１１４は、第２パワーアンプ１１２と第３送信フィルタ１３３とのインピーダンス整合をとるための回路である。第２出力整合回路１１４は、例えば、第２パワーアンプ１１２の第２出力端子と第２スイッチ１０５との間に接続された第２インダクタＬ２（図１参照）を含む。第２出力整合回路１１４は、例えば、複数のインダクタ及び複数のキャパシタを含んでもよい。 The second output matching circuit 114 is provided in the signal path between the second output terminal of the second power amplifier 112 and the second switch 105. The second output matching circuit 114 is a circuit for achieving impedance matching between the second power amplifier 112 and the third transmission filter 133. The second output matching circuit 114 includes, for example, a second inductor L2 (see FIG. 1) connected between the second output terminal of the second power amplifier 112 and the second switch 105. The second output matching circuit 114 may include, for example, a plurality of inductors and a plurality of capacitors.
　コントローラ１１５は、例えば、信号処理回路３０１からの制御信号にしたがって第１パワーアンプ１１１及び第２パワーアンプ１１２を制御する。コントローラ１１５は、例えば、第１パワーアンプ１１１のドライバ段増幅器及び出力段増幅器と接続されている。また、コントローラ１１５は、第２パワーアンプ１１２のドライバ段増幅器及び出力段増幅器とも接続されている。コントローラ１１５は、複数（例えば、４つ）の制御端子８４を介して信号処理回路３０１に接続される。制御端子８４は、外部回路（例えば、信号処理回路３０１）からの制御信号をコントローラ１１５に入力するための端子である。コントローラ１１５は、制御端子８４から取得した制御信号に基づいて第１パワーアンプ１１１及び第２パワーアンプ１１２を制御する。制御端子８４からコントローラ１１５が取得する制御信号は、デジタル信号である。制御端子８４の数は、例えば、４つであるが、図３には１つのみ図示してある。 The controller 115 controls, for example, the first power amplifier 111 and the second power amplifier 112 according to the control signal from the signal processing circuit 301. The controller 115 is connected to, for example, the driver stage amplifier and the output stage amplifier of the first power amplifier 111. The controller 115 is also connected to the driver stage amplifier and the output stage amplifier of the second power amplifier 112. The controller 115 is connected to the signal processing circuit 301 via a plurality of (for example, four) control terminals 84. The control terminal 84 is a terminal for inputting a control signal from an external circuit (for example, a signal processing circuit 301) to the controller 115. The controller 115 controls the first power amplifier 111 and the second power amplifier 112 based on the control signal acquired from the control terminal 84. The control signal acquired by the controller 115 from the control terminal 84 is a digital signal. The number of control terminals 84 is, for example, four, but only one is shown in FIG.
　複数の受信フィルタ１７１、１７２、１７３は、互いに異なる周波数帯域を通過帯域とする受信フィルタである。以下では、３つの受信フィルタ１７１、１７２、１７３を区別して説明する場合に、３つの受信フィルタ１７１、１７２、１７３をそれぞれ、第１受信フィルタ１７１、第２受信フィルタ１７２、第３受信フィルタ１７３と称することもある。 The plurality of reception filters 171, 172, and 173 are reception filters having different frequency bands as pass bands. In the following, when the three reception filters 171 and 172 and 173 are described separately, the three reception filters 171 and 172 and 173 are referred to as the first reception filter 171 and the second reception filter 172 and the third reception filter 173, respectively. Sometimes referred to.
　第１受信フィルタ１７１は、例えば、第１通信バンドの受信帯域を通過帯域とするフィルタである。第２受信フィルタ１７２は、例えば、第２通信バンドの受信帯域を通過帯域とするフィルタである。第３受信フィルタ１７３は、例えば、第３通信バンドの受信帯域を通過帯域とするフィルタである。第１通信バンドは、第１受信フィルタ１７１を通る受信信号に対応する。第２通信バンドは、第２受信フィルタ１７２を通る受信信号に対応する。第３通信バンドは、第３受信フィルタ１７３を通る受信信号に対応する。第１通信バンド～第３通信バンドの各々は、例えば、３ＧＰＰ　ＬＴＥ規格の通信バンド又は５Ｇ　ＮＲ規格の通信バンドである。なお、高周波モジュール１００では、第１送信フィルタ１３１と第１受信フィルタ１７１とで第１デュプレクサを構成している。また、高周波モジュール１００では、第２送信フィルタ１３２と第２受信フィルタ１７２とで第２デュプレクサを構成している。また、高周波モジュール１００では、第３送信フィルタ１３３と受信フィルタ１７３とで第３デュプレクサを構成している。 The first reception filter 171 is, for example, a filter whose pass band is the reception band of the first communication band. The second reception filter 172 is, for example, a filter having a reception band of the second communication band as a pass band. The third reception filter 173 is, for example, a filter having a reception band of the third communication band as a pass band. The first communication band corresponds to a received signal that passes through the first receive filter 171. The second communication band corresponds to a received signal that passes through the second receive filter 172. The third communication band corresponds to a received signal that passes through the third receive filter 173. Each of the first communication band to the third communication band is, for example, a 3GPP LTE standard communication band or a 5G NR standard communication band. In the high frequency module 100, the first transmission filter 131 and the first reception filter 171 form a first duplexer. Further, in the high frequency module 100, the second transmission filter 132 and the second reception filter 172 form a second duplexer. Further, in the high frequency module 100, the third transmission filter 133 and the reception filter 173 form a third duplexer.
　ローノイズアンプ１２１は、入力端子及び出力端子を有する。ローノイズアンプ１２１は、入力端子に入力された受信信号を増幅して出力端子から出力する。ローノイズアンプ１２１の入力端子は、入力整合回路１２３を介して第３スイッチ１０６に接続されている。ローノイズアンプ１２１の出力端子は、信号出力端子８３に接続されている。ローノイズアンプ１２１の出力端子は、例えば、信号出力端子８３を介して信号処理回路３０１に接続される。信号出力端子８３は、ローノイズアンプ１２１からの高周波信号（受信信号）を外部回路（例えば、信号処理回路３０１）へ出力するための端子である。高周波モジュール１００では、ローノイズアンプ１２１の入力端子と３つの受信フィルタ１７１、１７２、１７３とが入力整合回路１２３及び第３スイッチ１０６を介して接続可能となっている。 The low noise amplifier 121 has an input terminal and an output terminal. The low noise amplifier 121 amplifies the received signal input to the input terminal and outputs it from the output terminal. The input terminal of the low noise amplifier 121 is connected to the third switch 106 via the input matching circuit 123. The output terminal of the low noise amplifier 121 is connected to the signal output terminal 83. The output terminal of the low noise amplifier 121 is connected to the signal processing circuit 301 via, for example, the signal output terminal 83. The signal output terminal 83 is a terminal for outputting a high frequency signal (received signal) from the low noise amplifier 121 to an external circuit (for example, a signal processing circuit 301). In the high frequency module 100, the input terminal of the low noise amplifier 121 and the three reception filters 171, 172, and 173 can be connected via the input matching circuit 123 and the third switch 106.
　入力整合回路１２３は、ローノイズアンプ１２１と３つ受信フィルタ１７１、１７２、１７３とのインピーダンス整合をとるための回路である。入力整合回路１２３は、例えば、ローノイズアンプ１２１の入力端子と第３スイッチ１０６との間に接続されているインダクタを含む。入力整合回路１２３は、例えば、複数のインダクタ及び複数のキャパシタを含んでもよい。また、高周波モジュール１００は、入力整合回路１２３を複数（３つ）備えていてもよく、この場合、３つの入力整合回路１２３が、ローノイズアンプ１２１と３つの受信フィルタ１７１、１７２、１７３それぞれとの間に１つずつ設けられていてもよい。 The input matching circuit 123 is a circuit for impedance matching between the low noise amplifier 121 and the three receiving filters 171, 172, and 173. The input matching circuit 123 includes, for example, an inductor connected between the input terminal of the low noise amplifier 121 and the third switch 106. The input matching circuit 123 may include, for example, a plurality of inductors and a plurality of capacitors. Further, the high frequency module 100 may include a plurality (three) of input matching circuits 123, and in this case, the three input matching circuits 123 have the low noise amplifier 121 and the three receiving filters 171, 172, and 173, respectively. It may be provided one by one between them.
　第１スイッチ１０４は、共通端子１４０と、複数（例えば、３つ）の選択端子１４１～１４３と、を有する。第１スイッチ１０４では、共通端子１４０が、アンテナ端子８１に接続されている。高周波モジュール１００は、共通端子１４０とアンテナ端子８１とが他の回路素子を介さずに接続される場合に限らず、例えば、ローパスフィルタ及びカプラを介して接続されてもよい。選択端子１４１は、第１送信フィルタ１３１の出力端子と第１受信フィルタ１７１の入力端子との接続点に接続されている。選択端子１４２は、第２送信フィルタ１３２の出力端子と第２受信フィルタ１７２の入力端子との接続点に接続されている。選択端子１４３は、第３送信フィルタ１３３の出力端子と第３受信フィルタ１７３の入力端子との接続点に接続されている。第１スイッチ１０４は、例えば、共通端子１４０に３つの選択端子１４１～１４３のうち少なくとも１つ以上を接続可能なスイッチである。ここで、第１スイッチ１０４は、例えば、一対一及び一対多の接続が可能なスイッチである。 The first switch 104 has a common terminal 140 and a plurality of (for example, three) selection terminals 141 to 143. In the first switch 104, the common terminal 140 is connected to the antenna terminal 81. The high frequency module 100 is not limited to the case where the common terminal 140 and the antenna terminal 81 are connected without interposing other circuit elements, and may be connected, for example, via a low-pass filter and a coupler. The selection terminal 141 is connected to a connection point between the output terminal of the first transmission filter 131 and the input terminal of the first reception filter 171. The selection terminal 142 is connected to a connection point between the output terminal of the second transmission filter 132 and the input terminal of the second reception filter 172. The selection terminal 143 is connected to a connection point between the output terminal of the third transmission filter 133 and the input terminal of the third reception filter 173. The first switch 104 is, for example, a switch to which at least one or more of the three selection terminals 141 to 143 can be connected to the common terminal 140. Here, the first switch 104 is, for example, a switch capable of one-to-one and one-to-many connections.
　第１スイッチ１０４は、例えば、信号処理回路３０１によって制御される。第１スイッチ１０４は、信号処理回路３０１のＲＦ信号処理回路３０２からの制御信号にしたがって、共通端子１４０と３つの選択端子１４１～１４３との接続状態を切り替える。第１スイッチ１０４は、例えば、スイッチＩＣ（Integrated Circuit）である。 The first switch 104 is controlled by, for example, the signal processing circuit 301. The first switch 104 switches the connection state between the common terminal 140 and the three selection terminals 141 to 143 according to the control signal from the RF signal processing circuit 302 of the signal processing circuit 301. The first switch 104 is, for example, a switch IC (Integrated Circuit).
　第２スイッチ１０５は、第１端子（共通端子）１５０Ａと、第２端子１５０Ｂと、第１端子１５０Ａに接続可能な複数（例えば、２つ）の第１選択端子１５１、１５２と、第２端子１５０Ｂに接続可能な第２選択端子１５３と、を有する。第２スイッチ１０５では、第１端子１５０Ａが、第１出力整合回路１１３を介して第１パワーアンプ１１１の第１出力端子に接続されている。第１選択端子１５１は、第１送信フィルタ１３１の入力端子に接続されている。第１選択端子１５２は、第２送信フィルタ１３２の入力端子に接続されている。第２選択端子１５３は、第３送信フィルタ１３３の入力端子に接続されている。第２スイッチ１０５は、例えば、第１端子１５０Ａに２つの第１選択端子１５１、１５２のうち少なくとも１つ以上を接続可能なスイッチである。また、第２スイッチ１０５は、第２端子１５０Ｂに第２選択端子１５３を接続可能なスイッチである。 The second switch 105 includes a first terminal (common terminal) 150A, a second terminal 150B, a plurality of (for example, two) first selection terminals 151 and 152 that can be connected to the first terminal 150A, and a second terminal. It has a second selection terminal 153 that can be connected to 150B. In the second switch 105, the first terminal 150A is connected to the first output terminal of the first power amplifier 111 via the first output matching circuit 113. The first selection terminal 151 is connected to the input terminal of the first transmission filter 131. The first selection terminal 152 is connected to the input terminal of the second transmission filter 132. The second selection terminal 153 is connected to the input terminal of the third transmission filter 133. The second switch 105 is, for example, a switch capable of connecting at least one or more of the two first selection terminals 151 and 152 to the first terminal 150A. Further, the second switch 105 is a switch capable of connecting the second selection terminal 153 to the second terminal 150B.
　第２スイッチ１０５は、例えば、信号処理回路３０１によって制御される。この場合、第２スイッチ１０５は、信号処理回路３０１のＲＦ信号処理回路３０２からの制御信号にしたがって、共通端子１５０Ａと複数の第１選択端子１５１、１５２との接続状態、第２端子１５０Ｂと第２選択端子１５３との接続状態を切り替える。第２スイッチ１０５は、例えば、スイッチＩＣである。 The second switch 105 is controlled by, for example, the signal processing circuit 301. In this case, the second switch 105 is in a connection state between the common terminal 150A and the plurality of first selection terminals 151 and 152, and the second terminal 150B and the second terminal 150B according to the control signal from the RF signal processing circuit 302 of the signal processing circuit 301. 2 Switch the connection status with the selection terminal 153. The second switch 105 is, for example, a switch IC.
　第３スイッチ１０６は、共通端子１６０と、複数（例えば、３つ）の選択端子１６１、１６２、１６３と、を有する。第３スイッチ１０６では、共通端子１６０が、入力整合回路１２３を介してローノイズアンプ１２１の入力端子に接続されている。選択端子１６１は、第１受信フィルタ１７１の出力端子に接続されている。選択端子１６２は、第２受信フィルタ１７２の出力端子に接続されている。選択端子１６３は、第３受信フィルタ１７３の出力端子に接続されている。第３スイッチ１０６は、例えば、共通端子１６０に３つの選択端子１６１～１６３のうち少なくとも１つ以上を接続可能なスイッチである。ここで、第３スイッチ１０６は、例えば、一対一及び一対多の接続が可能なスイッチである。 The third switch 106 has a common terminal 160 and a plurality of (for example, three) selection terminals 161, 162, and 163. In the third switch 106, the common terminal 160 is connected to the input terminal of the low noise amplifier 121 via the input matching circuit 123. The selection terminal 161 is connected to the output terminal of the first reception filter 171. The selection terminal 162 is connected to the output terminal of the second reception filter 172. The selection terminal 163 is connected to the output terminal of the third reception filter 173. The third switch 106 is, for example, a switch capable of connecting at least one or more of the three selection terminals 161 to 163 to the common terminal 160. Here, the third switch 106 is, for example, a switch capable of one-to-one and one-to-many connections.
　第３スイッチ１０６は、例えば、信号処理回路３０１によって制御される。第３スイッチ１０６は、信号処理回路３０１のＲＦ信号処理回路３０２からの制御信号にしたがって、共通端子１６０と３つの選択端子１６１～１６３との接続状態を切り替える。第３スイッチ１０６は、例えば、スイッチＩＣである。 The third switch 106 is controlled by, for example, the signal processing circuit 301. The third switch 106 switches the connection state between the common terminal 160 and the three selection terminals 161 to 163 according to the control signal from the RF signal processing circuit 302 of the signal processing circuit 301. The third switch 106 is, for example, a switch IC.
　（１．２）高周波モジュールの構造
　高周波モジュール１００は、図１及び２に示すように、実装基板９と、第１電子部品１（第３受信フィルタ１７３）と、第２電子部品２（第３送信フィルタ１３３）と、第３電子部品３（第１受信フィルタ１７１）と、第４電子部品（第１送信フィルタ１３１）と、を備える。また、高周波モジュール１００は、第１出力整合回路１１３（図３参照）に含まれる第１インダクタＬ１と、第２出力整合回路１１４（図３参照）に含まれる第２インダクタＬ２と、を備える。また、高周波モジュール１００は、第２送信フィルタ１３２と、第２受信フィルタ１７２と、第１パワーアンプ１１１と、第２パワーアンプ１１２と、コントローラ１１５と、ローノイズアンプ１２１と、入力整合回路１２３と、第１スイッチ１０４と、第２スイッチ１０５と、第３スイッチ１０６と、を備える（図３参照）。また、高周波モジュール１００は、複数の外部接続端子８を備える。また、高周波モジュール１００は、樹脂層５と、シールド層６と、を備える。 (1.2) Structure of High Frequency Module As shown in FIGS. 1 and 2, the high frequency module 100 includes a mounting board 9, a first electronic component 1 (third receiving filter 173), and a second electronic component 2 (third). It includes a transmission filter 133), a third electronic component 3 (first reception filter 171), and a fourth electronic component (first transmission filter 131). Further, the high frequency module 100 includes a first inductor L1 included in the first output matching circuit 113 (see FIG. 3) and a second inductor L2 included in the second output matching circuit 114 (see FIG. 3). Further, the high frequency module 100 includes a second transmission filter 132, a second reception filter 172, a first power amplifier 111, a second power amplifier 112, a controller 115, a low noise amplifier 121, an input matching circuit 123, and the like. It includes a first switch 104, a second switch 105, and a third switch 106 (see FIG. 3). Further, the high frequency module 100 includes a plurality of external connection terminals 8. Further, the high frequency module 100 includes a resin layer 5 and a shield layer 6.
　実装基板９は、実装基板９の厚さ方向Ｄ１において互いに対向する第１主面９１及び第２主面９２を有する。実装基板９は、例えば、複数の誘電体層９７（図２参照）及び複数の導電層９８（図２参照）を含む多層基板である。複数の誘電体層９７及び複数の導電層９８は、実装基板９の厚さ方向Ｄ１において積層されている。複数の導電層９８は、層ごとに定められた所定パターンに形成されている。複数の導電層９８の各々は、実装基板９の厚さ方向Ｄ１に直交する一平面内において１つ又は複数の導体部を含む。各導電層９８の材料は、例えば、銅である。複数の導電層９８は、グランド層を含む。高周波モジュール１００では、複数のグランド端子８５とグランド層とが、実装基板９の有するビア導体等を介して電気的に接続されている。実装基板９は、例えば、ＬＴＣＣ（Low Temperature Co-fired Ceramics）基板である。実装基板９は、ＬＴＣＣ基板に限らず、例えば、プリント配線板、ＨＴＣＣ（High Temperature Co-fired Ceramics）基板、樹脂多層基板であってもよい。 The mounting board 9 has a first main surface 91 and a second main surface 92 facing each other in the thickness direction D1 of the mounting board 9. The mounting substrate 9 is, for example, a multilayer substrate including a plurality of dielectric layers 97 (see FIG. 2) and a plurality of conductive layers 98 (see FIG. 2). The plurality of dielectric layers 97 and the plurality of conductive layers 98 are laminated in the thickness direction D1 of the mounting substrate 9. The plurality of conductive layers 98 are formed in a predetermined pattern defined for each layer. Each of the plurality of conductive layers 98 includes one or a plurality of conductor portions in one plane orthogonal to the thickness direction D1 of the mounting substrate 9. The material of each conductive layer 98 is, for example, copper. The plurality of conductive layers 98 include a ground layer. In the high frequency module 100, a plurality of ground terminals 85 and a ground layer are electrically connected via a via conductor or the like included in the mounting substrate 9. The mounting substrate 9 is, for example, an LTCC (Low Temperature Co-fired Ceramics) substrate. The mounting substrate 9 is not limited to the LTCC substrate, and may be, for example, a printed wiring board, an HTCC (High Temperature Co-fired Ceramics) substrate, or a resin multilayer substrate.
　また、実装基板９は、ＬＴＣＣ基板に限らず、例えば、配線構造体であってもよい。配線構造体は、例えば、多層構造体である。多層構造体は、少なくとも１つの絶縁層と、少なくとも１つの導電層とを含む。絶縁層は、所定パターンに形成されている。絶縁層が複数の場合は、複数の絶縁層は、層ごとに定められた所定パターンに形成されている。導電層は、絶縁層の所定パターンとは異なる所定パターンに形成されている。導電層が複数の場合は、複数の導電層は、層ごとに定められた所定パターンに形成されている。導電層は、１つ又は複数の再配線部を含んでもよい。配線構造体では、多層構造体の厚さ方向において互いに対向する２つの面のうち第１面が実装基板９の第１主面９１であり、第２面が実装基板９の第２主面９２である。配線構造体は、例えば、インタポーザであってもよい。インタポーザは、シリコン基板を用いたインタポーザであってもよいし、多層で構成された基板であってもよい。 Further, the mounting board 9 is not limited to the LTCC board, and may be, for example, a wiring structure. The wiring structure is, for example, a multi-layer structure. The multilayer structure includes at least one insulating layer and at least one conductive layer. The insulating layer is formed in a predetermined pattern. When there are a plurality of insulating layers, the plurality of insulating layers are formed in a predetermined pattern determined for each layer. The conductive layer is formed in a predetermined pattern different from the predetermined pattern of the insulating layer. When there are a plurality of conductive layers, the plurality of conductive layers are formed in a predetermined pattern determined for each layer. The conductive layer may include one or more rewiring portions. In the wiring structure, of the two surfaces facing each other in the thickness direction of the multilayer structure, the first surface is the first main surface 91 of the mounting board 9, and the second surface is the second main surface 92 of the mounting board 9. Is. The wiring structure may be, for example, an interposer. The interposer may be an interposer using a silicon substrate or a substrate composed of multiple layers.
　実装基板９の第１主面９１及び第２主面９２は、実装基板９の厚さ方向Ｄ１において離れており、実装基板９の厚さ方向Ｄ１に交差する。実装基板９における第１主面９１は、例えば、実装基板９の厚さ方向Ｄ１に直交しているが、例えば、厚さ方向Ｄ１に直交しない面として導体部の側面等を含んでいてもよい。また、実装基板９における第２主面９２は、例えば、実装基板９の厚さ方向Ｄ１に直交しているが、例えば、厚さ方向Ｄ１に直交しない面として、導体部の側面等を含んでいてもよい。また、実装基板９の第１主面９１及び第２主面９２は、微細な凹凸又は凹部又は凸部が形成されていてもよい。また、実装基板９の第１主面９１が凹部９１１（以下、第１凹部９１１ともいう）を有する場合、実装基板９の第１主面９１は、第１凹部９１１の内面（底面９１１１及び内周面９１１２）を含む。また、実装基板９の第１主面９１が第２凹部９１２を有する場合、実装基板９の第１主面９１は、第２凹部９１２の内面（底面９１２１及び内周面９１２２）を含む。 The first main surface 91 and the second main surface 92 of the mounting board 9 are separated from each other in the thickness direction D1 of the mounting board 9, and intersect with the thickness direction D1 of the mounting board 9. The first main surface 91 of the mounting board 9 is, for example, orthogonal to the thickness direction D1 of the mounting board 9, but may include, for example, the side surface of the conductor portion as a surface not orthogonal to the thickness direction D1. .. Further, the second main surface 92 of the mounting board 9 is, for example, orthogonal to the thickness direction D1 of the mounting board 9, but includes, for example, the side surface of the conductor portion as a surface not orthogonal to the thickness direction D1. You may. Further, the first main surface 91 and the second main surface 92 of the mounting substrate 9 may be formed with fine irregularities, concave portions or convex portions. When the first main surface 91 of the mounting board 9 has a recess 911 (hereinafter, also referred to as a first recess 911), the first main surface 91 of the mounting board 9 is the inner surface (bottom surface 9111 and inner surface) of the first recess 911. The peripheral surface 9112) is included. When the first main surface 91 of the mounting board 9 has the second recess 912, the first main surface 91 of the mounting board 9 includes the inner surface (bottom surface 9121 and inner peripheral surface 9122) of the second recess 912.
　実施形態１に係る高周波モジュール１００では、複数の回路部品が、実装基板９の第１主面９１に実装されている。複数の回路部品は、第１電子部品１（第３受信フィルタ１７３）と、第３電子部品３（第１受信フィルタ１７１）と、第２受信フィルタ１７２と、第１パワーアンプ１１１と、第２パワーアンプ１１２と、第１インダクタＬ１と、第２インダクタＬ２と、入力整合回路１２３のインダクタと、第１スイッチ１０４と、第２スイッチ１０５と、第３スイッチ１０６と、を含む。「回路部品が実装基板９の第１主面９１に実装されている」とは、回路部品が実装基板９の第１主面９１に配置されていること（機械的に接続されていること）と、回路部品が実装基板９（の適宜の導体部）と電気的に接続されていることと、を含む。 In the high frequency module 100 according to the first embodiment, a plurality of circuit components are mounted on the first main surface 91 of the mounting board 9. The plurality of circuit components include a first electronic component 1 (third receiving filter 173), a third electronic component 3 (first receiving filter 171), a second receiving filter 172, a first power amplifier 111, and a second. It includes a power amplifier 112, a first inductor L1, a second inductor L2, an inductor of an input matching circuit 123, a first switch 104, a second switch 105, and a third switch 106. "The circuit component is mounted on the first main surface 91 of the mounting board 9" means that the circuit component is arranged on the first main surface 91 of the mounting board 9 (mechanically connected). And that the circuit component is electrically connected to (the appropriate conductor portion) of the mounting board 9.
　また、高周波モジュール１００では、第２電子部品２（第３送信フィルタ１３３）が、実装基板９の厚さ方向Ｄ１において第１電子部品１（第３受信フィルタ１７３）における実装基板９側とは反対側の主面１１に配置されている。また、高周波モジュール１００では、第４電子部品４（第１送信フィルタ１３１）が、実装基板９の厚さ方向Ｄ１において第３電子部品３（第１受信フィルタ１７１）における実装基板９側とは反対側の主面３１に配置されている。また、高周波モジュール１００では、第２送信フィルタ１３２が第２受信フィルタ１７２上に配置されている。 Further, in the high frequency module 100, the second electronic component 2 (third transmission filter 133) is opposite to the mounting board 9 side of the first electronic component 1 (third receiving filter 173) in the thickness direction D1 of the mounting board 9. It is arranged on the main surface 11 on the side. Further, in the high frequency module 100, the fourth electronic component 4 (first transmission filter 131) is opposite to the mounting substrate 9 side of the third electronic component 3 (first receiving filter 171) in the thickness direction D1 of the mounting substrate 9. It is arranged on the main surface 31 on the side. Further, in the high frequency module 100, the second transmission filter 132 is arranged on the second reception filter 172.
　３つの受信フィルタ１７１、１７２、１７３の各々は、例えば、ラダー型フィルタであり、複数（例えば、４つ）の直列腕共振子と、複数（例えば、３つ）の並列腕共振子と、を有する。３つの受信フィルタ１７１、１７２、１７３の各々は、例えば、弾性波フィルタである。弾性波フィルタは、複数の直列腕共振子及び複数の並列腕共振子の各々が弾性波共振子により構成されている。弾性波フィルタは、例えば、弾性表面波を利用する表面弾性波フィルタである。表面弾性波フィルタでは、複数の直列腕共振子及び複数の並列腕共振子の各々は、例えば、ＳＡＷ（Surface Acoustic Wave）共振子である。 Each of the three receive filters 171, 172, 173 is, for example, a ladder type filter, and has a plurality of (for example, four) series arm resonators and a plurality of (for example, three) parallel arm resonators. Have. Each of the three receive filters 171 and 172, 173 is, for example, an elastic wave filter. In the elastic wave filter, each of the plurality of series arm resonators and the plurality of parallel arm resonators is composed of elastic wave resonators. The surface acoustic wave filter is, for example, a surface acoustic wave filter that utilizes a surface acoustic wave. In the surface acoustic wave filter, each of the plurality of series arm resonators and the plurality of parallel arm resonators is, for example, a SAW (Surface Acoustic Wave) resonator.
　上述のように３つの受信フィルタ１７１、１７２、１７３は、実装基板９の第１主面９１に実装されている。実装基板９の厚さ方向Ｄ１からの平面視で、３つの受信フィルタ１７１、１７２、１７３の各々の外縁は、四角形状である。 As described above, the three reception filters 171, 172, and 173 are mounted on the first main surface 91 of the mounting board 9. In a plan view from the thickness direction D1 of the mounting substrate 9, the outer edges of each of the three receiving filters 171 and 172, 173 are rectangular.
　３つの送信フィルタ１３１、１３２、１３３の各々は、例えば、ラダー型フィルタであり、複数（例えば、４つ）の直列腕共振子と、複数（例えば、３つ）の並列腕共振子と、を有する。３つの送信フィルタ１３１、１３２、１３３の各々は、例えば、弾性波フィルタである。弾性波フィルタは、複数の直列腕共振子及び複数の並列腕共振子の各々が弾性波共振子により構成されている。弾性波フィルタは、例えば、弾性表面波を利用する表面弾性波フィルタである。表面弾性波フィルタでは、複数の直列腕共振子及び複数の並列腕共振子の各々は、例えば、ＳＡＷ共振子である。 Each of the three transmission filters 131, 132, 133 is, for example, a ladder type filter, and has a plurality of (for example, four) series arm resonators and a plurality of (for example, three) parallel arm resonators. Have. Each of the three transmission filters 131, 132, 133 is, for example, an elastic wave filter. In the elastic wave filter, each of the plurality of series arm resonators and the plurality of parallel arm resonators is composed of elastic wave resonators. The surface acoustic wave filter is, for example, a surface acoustic wave filter that utilizes a surface acoustic wave. In a surface acoustic wave filter, each of the plurality of series arm resonators and the plurality of parallel arm resonators is, for example, a SAW resonator.
　第１送信フィルタ１３１は、第１受信フィルタ１７１上に配置されている。第２送信フィルタ１３２は、第２受信フィルタ１７２上に配置されている。第３送信フィルタ１３３は、第３受信フィルタ１７３上に配置されている。実装基板９の厚さ方向Ｄ１からの平面視で、３つの送信フィルタ１３１、１３２、１３３の各々の外縁は、四角形状である。 The first transmission filter 131 is arranged on the first reception filter 171. The second transmission filter 132 is arranged on the second reception filter 172. The third transmission filter 133 is arranged on the third reception filter 173. In a plan view from the thickness direction D1 of the mounting substrate 9, the outer edges of each of the three transmission filters 131, 132, 133 are rectangular.
　第１パワーアンプ１１１及び第２パワーアンプ１１２の各々は、電力増幅用ＩＣチップである。第１パワーアンプ１１１及び第２パワーアンプ１１２は、上述のように、実装基板９の第１主面９１に実装されている。実装基板９の厚さ方向Ｄ１からの平面視で、第１パワーアンプ１１１及び第２パワーアンプ１１２の各々の外縁は、四角形状である。 Each of the first power amplifier 111 and the second power amplifier 112 is a power amplification IC chip. As described above, the first power amplifier 111 and the second power amplifier 112 are mounted on the first main surface 91 of the mounting board 9. The outer edges of the first power amplifier 111 and the second power amplifier 112 are rectangular in a plan view from the thickness direction D1 of the mounting board 9.
　第１パワーアンプ１１１のドライバ段増幅器及び最終段増幅器の各々は、増幅用トランジスタを含む。増幅用トランジスタは、例えば、ＨＢＴ（Heterojunction Bipolar Transistor）である。増幅用トランジスタは、ＨＢＴに限らず、バイポーラトランジスタ、ＦＥＴ（Field Effect Transistor）であってもよい。ＦＥＴは、例えば、ＭＯＳＦＥＴ（Metal-Oxide-Semiconductor Field Effect Transistor）である。 Each of the driver stage amplifier and the final stage amplifier of the first power amplifier 111 includes an amplification transistor. The amplification transistor is, for example, an HBT (Heterojunction Bipolar Transistor). The amplification transistor is not limited to the HBT, but may be a bipolar transistor or a FET (Field Effect Transistor). The FET is, for example, a MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor).
　第２パワーアンプ１１２のドライバ段増幅器及び最終段増幅器の各々は、増幅用トランジスタを含む。増幅用トランジスタは、例えば、ＨＢＴである。増幅用トランジスタは、ＨＢＴに限らず、バイポーラトランジスタ、ＦＥＴであってもよい。ＦＥＴは、例えば、ＭＯＳＦＥＴである。 Each of the driver stage amplifier and the final stage amplifier of the second power amplifier 112 includes an amplification transistor. The amplification transistor is, for example, an HBT. The amplification transistor is not limited to the HBT, but may be a bipolar transistor or FET. The FET is, for example, a MOSFET.
　第１出力整合回路１１３に含まれる第１インダクタＬ１は、チップインダクタであり、上述のように、実装基板９の第１主面９１に実装されている。実装基板９の厚さ方向Ｄ１からの平面視で、第１インダクタＬ１の外縁は、四角形状である。第１パワーアンプ１１１が差動合成増幅器の場合、第１出力整合回路１１３は、トランスを含んでもよい。 The first inductor L1 included in the first output matching circuit 113 is a chip inductor, and is mounted on the first main surface 91 of the mounting board 9 as described above. The outer edge of the first inductor L1 is rectangular in a plan view from the thickness direction D1 of the mounting substrate 9. When the first power amplifier 111 is a differential synthesis amplifier, the first output matching circuit 113 may include a transformer.
　第２出力整合回路１１４に含まれる第２インダクタＬ２は、チップインダクタであり、上述のように、実装基板９の第１主面９１に実装されている。実装基板９の厚さ方向Ｄ１からの平面視で、第２インダクタＬ２の外縁は、四角形状である。第２パワーアンプ１１２が差動合成増幅器の場合、第２出力整合回路１１４は、トランスを含んでもよい。 The second inductor L2 included in the second output matching circuit 114 is a chip inductor, and is mounted on the first main surface 91 of the mounting board 9 as described above. The outer edge of the second inductor L2 is rectangular in a plan view from the thickness direction D1 of the mounting substrate 9. When the second power amplifier 112 is a differential synthesis amplifier, the second output matching circuit 114 may include a transformer.
　コントローラ１１５は、実装基板９の第１主面９１に実装されている。実装基板９の厚さ方向Ｄ１からの平面視で、コントローラ１１５の外縁は、四角形状である。コントローラ１１５は、回路部を含むＩＣチップである。回路部は、信号処理回路３０１からの制御信号に応じて第１パワーアンプ１１１及び第２パワーアンプ１１２を制御する制御回路を含む。 The controller 115 is mounted on the first main surface 91 of the mounting board 9. The outer edge of the controller 115 is rectangular in a plan view from the thickness direction D1 of the mounting board 9. The controller 115 is an IC chip including a circuit unit. The circuit unit includes a control circuit that controls the first power amplifier 111 and the second power amplifier 112 according to the control signal from the signal processing circuit 301.
　ローノイズアンプ１２１は、実装基板９の第１主面９１に実装されている。実装基板９の厚さ方向Ｄ１からの平面視で、ローノイズアンプ１２１の外縁は、四角形状である。ローノイズアンプ１２１は、ローノイズアンプ１２１の入力端子に入力された受信信号を増幅する増幅用トランジスタとしてＦＥＴを含んでいる。増幅用トランジスタは、ＦＥＴに限らず、例えば、バイポーラトランジスタであってもよい。 The low noise amplifier 121 is mounted on the first main surface 91 of the mounting board 9. The outer edge of the low noise amplifier 121 is rectangular in a plan view from the thickness direction D1 of the mounting board 9. The low noise amplifier 121 includes a FET as an amplification transistor for amplifying a received signal input to the input terminal of the low noise amplifier 121. The amplification transistor is not limited to the FET, and may be, for example, a bipolar transistor.
　入力整合回路１２３に含まれるインダクタは、チップインダクタであり、実装基板９の第１主面９１に実装されている。実装基板９の厚さ方向Ｄ１からの平面視で、インダクタの外縁は、四角形状である。 The inductor included in the input matching circuit 123 is a chip inductor, which is mounted on the first main surface 91 of the mounting board 9. The outer edge of the inductor is rectangular in plan view from the thickness direction D1 of the mounting board 9.
　第１スイッチ１０４、第２スイッチ１０５及び第３スイッチ１０６は、実装基板９の第１主面９１に実装されている。実装基板９の厚さ方向Ｄ１からの平面視で、第１スイッチ１０４、第２スイッチ１０５及び第３スイッチ１０６の各々の外縁は、四角形状である。第１スイッチ１０４、第２スイッチ１０５及び第３スイッチ１０６の各々は、回路部を有するＩＣチップである。回路部は、複数のスイッチング素子として複数のＦＥＴを含んでいる。複数のスイッチング素子の各々は、ＦＥＴに限らず、例えば、バイポーラトランジスタであってもよい。第１スイッチ１０４、第２スイッチ１０５及び第３スイッチ１０６の各々は、実装基板９の第１主面９１にフリップチップ実装されている。高周波モジュール１００では、第１スイッチ１０４と、第２スイッチ１０５と、第３スイッチ１０６とのうち２つ又は３つが１つのＩＣチップに含まれていてもよい。 The first switch 104, the second switch 105, and the third switch 106 are mounted on the first main surface 91 of the mounting board 9. The outer edges of the first switch 104, the second switch 105, and the third switch 106 are rectangular in plan view from the thickness direction D1 of the mounting board 9. Each of the first switch 104, the second switch 105, and the third switch 106 is an IC chip having a circuit unit. The circuit unit includes a plurality of FETs as a plurality of switching elements. Each of the plurality of switching elements is not limited to the FET, and may be, for example, a bipolar transistor. Each of the first switch 104, the second switch 105, and the third switch 106 is flip-chip mounted on the first main surface 91 of the mounting board 9. In the high frequency module 100, two or three of the first switch 104, the second switch 105, and the third switch 106 may be included in one IC chip.
　複数の外部接続端子８は、図１に示すように、実装基板９の第２主面９２に配置されている。「外部接続端子８が実装基板９の第２主面９２に配置されている」とは、外部接続端子８が実装基板９の第２主面９２に機械的に接続されていることと、外部接続端子８が実装基板９（の適宜の導体部）と電気的に接続されていることと、を含む。 As shown in FIG. 1, the plurality of external connection terminals 8 are arranged on the second main surface 92 of the mounting board 9. "The external connection terminal 8 is arranged on the second main surface 92 of the mounting board 9" means that the external connection terminal 8 is mechanically connected to the second main surface 92 of the mounting board 9 and that it is external. Includes that the connection terminal 8 is electrically connected to (the appropriate conductor portion) of the mounting board 9.
　複数の外部接続端子８は、図３に示すように、アンテナ端子８１と、信号入力端子８２Ａと、信号入力端子８２Ｂと、信号出力端子８３と、制御端子８４と、複数のグランド端子８５（図１参照）と、を含んでいる。複数のグランド端子８５は、実装基板９のグランド層と電気的に接続されている。グランド層は高周波モジュール１００の回路グランドであり、高周波モジュール１００の複数の回路部品は、グランド層と電気的に接続されている回路部品を含む。複数の外部接続端子８の材料は、例えば、金属（例えば、銅、銅合金等）である。 As shown in FIG. 3, the plurality of external connection terminals 8 include an antenna terminal 81, a signal input terminal 82A, a signal input terminal 82B, a signal output terminal 83, a control terminal 84, and a plurality of ground terminals 85 (FIG. 3). 1) and is included. The plurality of ground terminals 85 are electrically connected to the ground layer of the mounting board 9. The ground layer is the circuit ground of the high frequency module 100, and the plurality of circuit components of the high frequency module 100 include circuit components that are electrically connected to the ground layer. The material of the plurality of external connection terminals 8 is, for example, a metal (for example, copper, a copper alloy, etc.).
　樹脂層５は、図１に示すように、実装基板９の第１主面９１に配置されている。樹脂層５は、樹脂（例えば、エポキシ樹脂）を含む。樹脂層５は、樹脂の他にフィラーを含んでいてもよい。 As shown in FIG. 1, the resin layer 5 is arranged on the first main surface 91 of the mounting substrate 9. The resin layer 5 contains a resin (for example, an epoxy resin). The resin layer 5 may contain a filler in addition to the resin.
　樹脂層５は、第１電子部品１（第３受信フィルタ１７３）の外周面１３と、第３電子部品３（第１受信フィルタ１７１）の外周面３３と、を覆っている。第１電子部品１の外周面１３は、第１電子部品１において、実装基板９側とは反対側の主面１１と実装基板９側の主面とをつないでいる４つの側面を含む。第３電子部品３の外周面３３は、第３電子部品３において、実装基板９側とは反対側の主面３１と実装基板９側の主面とをつないでいる４つの側面を含む。また、樹脂層５は、第１インダクタＬ１及び第２インダクタＬ２を覆っている。また、樹脂層５は、第２受信フィルタ１７２の外周面、第１パワーアンプ１１１、第２パワーアンプ１１２、コントローラ１１５、ローノイズアンプ１２１、入力整合回路１２３に含まれるインダクタ、第１スイッチ１０４、第２スイッチ１０５及び第３スイッチ１０６も覆っている。 The resin layer 5 covers the outer peripheral surface 13 of the first electronic component 1 (third receiving filter 173) and the outer peripheral surface 33 of the third electronic component 3 (first receiving filter 171). The outer peripheral surface 13 of the first electronic component 1 includes four side surfaces of the first electronic component 1 connecting the main surface 11 on the side opposite to the mounting board 9 side and the main surface on the mounting board 9 side. The outer peripheral surface 33 of the third electronic component 3 includes four side surfaces of the third electronic component 3 connecting the main surface 31 on the side opposite to the mounting board 9 side and the main surface on the mounting board 9 side. Further, the resin layer 5 covers the first inductor L1 and the second inductor L2. Further, the resin layer 5 includes an outer peripheral surface of the second reception filter 172, a first power amplifier 111, a second power amplifier 112, a controller 115, a low noise amplifier 121, an inductor included in the input matching circuit 123, a first switch 104, and a first switch. It also covers the 2 switch 105 and the 3rd switch 106.
　また、樹脂層５は、第１電子部品１（第３受信フィルタ１７３）における実装基板９側とは反対側の主面１１に配置されている第２電子部品２（第３送信フィルタ１３３）の外周面２３も覆っている。第２電子部品２の外周面２３は、第２電子部品２において、第１電子部品１側とは反対側の主面２１と第１電子部品１側の主面とをつないでいる４つの側面を含む。また、樹脂層５は、第３電子部品３（第１受信フィルタ１７１）における実装基板９側とは反対側の主面３１に配置されている第４電子部品４（第１送信フィルタ１３１）の外周面４３も覆っている。第４電子部品４の外周面４３は、第４電子部品４において、第３電子部品３側とは反対側の主面４１と第３電子部品３側の主面とをつないでいる４つの側面を含む。 Further, the resin layer 5 is a second electronic component 2 (third transmission filter 133) arranged on the main surface 11 on the side opposite to the mounting board 9 side in the first electronic component 1 (third receiving filter 173). It also covers the outer peripheral surface 23. The outer peripheral surface 23 of the second electronic component 2 is the four side surfaces of the second electronic component 2 connecting the main surface 21 on the side opposite to the first electronic component 1 side and the main surface on the first electronic component 1 side. including. Further, the resin layer 5 is the fourth electronic component 4 (first transmission filter 131) arranged on the main surface 31 on the side opposite to the mounting board 9 side in the third electronic component 3 (first receiving filter 171). It also covers the outer peripheral surface 43. The outer peripheral surface 43 of the fourth electronic component 4 is a four side surface of the fourth electronic component 4 connecting the main surface 41 on the side opposite to the third electronic component 3 side and the main surface on the third electronic component 3 side. including.
　シールド層６は、樹脂層５を覆っている。シールド層６は、導電性を有する。高周波モジュール１００では、シールド層６は、高周波モジュール１００の内外の電磁シールドを目的として設けられている。シールド層６は、複数の金属層を積層した多層構造を有しているが、これに限らず、１つの金属層であってもよい。金属層は、１又は複数種の金属を含む。シールド層６は、樹脂層５における実装基板９側とは反対側の主面５１と、樹脂層５の外周面５３と、実装基板９の外周面９３と、を覆っている。シールド層６は、実装基板９の有するグランド層の外周面の少なくとも一部と接触している。これにより、シールド層６の電位をグランド層の電位と同じにすることができる。 The shield layer 6 covers the resin layer 5. The shield layer 6 has conductivity. In the high frequency module 100, the shield layer 6 is provided for the purpose of electromagnetic shielding inside and outside the high frequency module 100. The shield layer 6 has a multi-layer structure in which a plurality of metal layers are laminated, but the shield layer 6 is not limited to this and may be one metal layer. The metal layer contains one or more metals. The shield layer 6 covers the main surface 51 of the resin layer 5 opposite to the mounting substrate 9 side, the outer peripheral surface 53 of the resin layer 5, and the outer peripheral surface 93 of the mounting substrate 9. The shield layer 6 is in contact with at least a part of the outer peripheral surface of the ground layer of the mounting substrate 9. Thereby, the potential of the shield layer 6 can be made the same as the potential of the ground layer.
　シールド層６は、第２電子部品２における第１電子部品１側とは反対側の主面２１と、第４電子部品４における第３電子部品３側とは反対側の主面４１と、を覆っている。シールド層６は、第２電子部品２の主面２１と、第４電子部品４の主面４１と、に接している。また、シールド層６は、第２送信フィルタ１３２における第２受信フィルタ１７２側とは反対側の主面を覆っており、第２送信フィルタ１３２における第２受信フィルタ１７２側とは反対側の主面に接している。 The shield layer 6 has a main surface 21 of the second electronic component 2 opposite to the first electronic component 1 side and a main surface 41 of the fourth electronic component 4 opposite to the third electronic component 3 side. Covering. The shield layer 6 is in contact with the main surface 21 of the second electronic component 2 and the main surface 41 of the fourth electronic component 4. Further, the shield layer 6 covers the main surface of the second transmission filter 132 opposite to the second reception filter 172 side, and the main surface of the second transmission filter 132 opposite to the second reception filter 172 side. Is in contact with.
　（１．３）高周波モジュールの詳細構造
　実施形態１に係る高周波モジュール１００では、図１及び図２に示すように、実装基板９の第１主面９１は、第１凹部９１１及び第２凹部９１２を有する。実装基板９は、上述の多層基板であり、複数（例えば、２０）の誘電体層９７（図２参照）を有する。第１凹部９１１及び第２凹部９１２は、実装基板９の厚さ方向Ｄ１において２０層の誘電体層９７のうち７層の誘電体層９７にわたって形成されている。第１凹部９１１及び第２凹部９１２は、複数の誘電体層９７のうち少なくとも１層にわたって形成されていればよい。第１凹部９１１及び第２凹部９１２の各々の深さは、例えば、実装基板９の強度の観点から、実装基板９の最大厚さの半分よりも小さくしてある。 (1.3) Detailed Structure of High Frequency Module In the high frequency module 100 according to the first embodiment, as shown in FIGS. 1 and 2, the first main surface 91 of the mounting substrate 9 has a first concave portion 911 and a second concave portion 912. Has. The mounting substrate 9 is the multilayer board described above, and has a plurality of (for example, 20) dielectric layers 97 (see FIG. 2). The first recess 911 and the second recess 912 are formed over seven of the 20 dielectric layers 97 in the thickness direction D1 of the mounting substrate 9. The first recess 911 and the second recess 912 may be formed over at least one of the plurality of dielectric layers 97. The depth of each of the first recess 911 and the second recess 912 is made smaller than half the maximum thickness of the mounting board 9, for example, from the viewpoint of the strength of the mounting board 9.
　第１電子部品１は、その厚さ方向が実装基板９の厚さ方向Ｄ１と揃うように実装基板９の第１主面９１に実装されている。第３電子部品３は、その厚さ方向が実装基板９の厚さ方向Ｄ１と揃うように実装基板９の第１主面９１に実装されている。また、第２電子部品２は、その厚さ方向が実装基板９の厚さ方向Ｄ１と揃うように第１電子部品１の主面１１に配置されている。また、第４電子部品４は、その厚さ方向が実装基板９の厚さ方向Ｄ１と揃うように第３電子部品３の主面３１に配置されている。 The first electronic component 1 is mounted on the first main surface 91 of the mounting board 9 so that its thickness direction is aligned with the thickness direction D1 of the mounting board 9. The third electronic component 3 is mounted on the first main surface 91 of the mounting board 9 so that its thickness direction is aligned with the thickness direction D1 of the mounting board 9. Further, the second electronic component 2 is arranged on the main surface 11 of the first electronic component 1 so that the thickness direction thereof is aligned with the thickness direction D1 of the mounting substrate 9. Further, the fourth electronic component 4 is arranged on the main surface 31 of the third electronic component 3 so that the thickness direction thereof is aligned with the thickness direction D1 of the mounting substrate 9.
　第１電子部品１は、第１凹部９１１に実装されている。第１電子部品１は、実装基板９の第１主面９１における第１凹部９１１に接続されている複数の外部電極１５を有している。複数の外部電極１５の各々は、導電性を有するバンプである。実装基板９の厚さ方向Ｄ１における外部電極１５の厚さは、第１凹部９１１の深さよりも小さいが、これに限らず、例えば、第１凹部９１１の深さ以下であってもよい。 The first electronic component 1 is mounted in the first recess 911. The first electronic component 1 has a plurality of external electrodes 15 connected to the first recess 911 on the first main surface 91 of the mounting board 9. Each of the plurality of external electrodes 15 is a bump having conductivity. The thickness of the external electrode 15 in the thickness direction D1 of the mounting substrate 9 is smaller than the depth of the first recess 911, but is not limited to this, and may be, for example, less than or equal to the depth of the first recess 911.
　高周波モジュール１００では、実装基板９の厚さ方向Ｄ１からの平面視で、第１電子部品１の外形サイズが、凹部９１１のサイズよりも小さい。高周波モジュール１００では、実装基板９の厚さ方向Ｄ１からの平面視で、第１電子部品１の全部が凹部９１１の一部に重なる。「実装基板９の厚さ方向Ｄ１からの平面視で、第１電子部品１の全部が凹部９１１の一部に重なる」とは、実装基板９の厚さ方向Ｄ１からの平面視で、第１電子部品１が凹部９１１の領域内にあることを意味する。 In the high frequency module 100, the external size of the first electronic component 1 is smaller than the size of the recess 911 in a plan view from the thickness direction D1 of the mounting substrate 9. In the high frequency module 100, the entire first electronic component 1 overlaps a part of the recess 911 in a plan view from the thickness direction D1 of the mounting substrate 9. "In the plan view from the thickness direction D1 of the mounting board 9, all of the first electronic components 1 overlap with a part of the recess 911" is the first plan view from the thickness direction D1 of the mounting board 9. It means that the electronic component 1 is in the region of the recess 911.
　第２電子部品２は、第１電子部品１の主面１１に配置されている。言い換えれば、第２電子部品２は、第１電子部品１にスタックされている。第２電子部品２は、複数の外部電極２５を有している。高周波モジュール１００では、第２電子部品２の複数の外部電極２５の各々は、導電性を有するバンプである。第２電子部品２は、複数の外部電極２５により第１電子部品１に接続されており、第１電子部品１を介して実装基板９に接続されている。高周波モジュール１００では、第１電子部品１が第１電子部品１の厚さ方向に沿って形成されている複数の配線を有し、第２電子部品２の複数の外部電極２５は、第１電子部品１の複数の配線のうち第１電子部品１の主面１１で接続された配線と、その配線に接続されている外部電極１５と、を介して実装基板９と電気的に接続されている。 The second electronic component 2 is arranged on the main surface 11 of the first electronic component 1. In other words, the second electronic component 2 is stacked on the first electronic component 1. The second electronic component 2 has a plurality of external electrodes 25. In the high frequency module 100, each of the plurality of external electrodes 25 of the second electronic component 2 is a bump having conductivity. The second electronic component 2 is connected to the first electronic component 1 by a plurality of external electrodes 25, and is connected to the mounting board 9 via the first electronic component 1. In the high frequency module 100, the first electronic component 1 has a plurality of wirings formed along the thickness direction of the first electronic component 1, and the plurality of external electrodes 25 of the second electronic component 2 have the first electron. Of the plurality of wirings of the component 1, the wiring connected on the main surface 11 of the first electronic component 1 and the external electrode 15 connected to the wiring are electrically connected to the mounting board 9 via the wiring. ..
　第１電子部品１と第２電子部品２とを含むスタック構造体１０（図２参照）では、実装基板９の厚さ方向Ｄ１からの平面視で、第２電子部品２の外形サイズが第１電子部品１の外形サイズと同じであり、第２電子部品２の全部が第１電子部品１の全部に重なっている。第２電子部品２の外形サイズは、第１電子部品１の外形サイズと同じである場合に限らず、異なる外形サイズであってもよい。 In the stack structure 10 (see FIG. 2) including the first electronic component 1 and the second electronic component 2, the external size of the second electronic component 2 is the first in a plan view from the thickness direction D1 of the mounting substrate 9. It has the same external size as the electronic component 1, and the entire second electronic component 2 overlaps the entire first electronic component 1. The external size of the second electronic component 2 is not limited to the same as the external size of the first electronic component 1, and may be different external sizes.
　第３電子部品３は、第２凹部９１２に実装されている。第３電子部品３は、実装基板９の第１主面９１における第２凹部９１２に接続されている複数の外部電極３５を有している。複数の外部電極３５の各々は、導電性を有するバンプである。実装基板９の厚さ方向Ｄ１における外部電極３５の厚さは、第２凹部９１２の深さよりも小さいが、これに限らず、例えば、第２凹部９１２の深さ以下であってもよい。 The third electronic component 3 is mounted in the second recess 912. The third electronic component 3 has a plurality of external electrodes 35 connected to the second recess 912 on the first main surface 91 of the mounting board 9. Each of the plurality of external electrodes 35 is a bump having conductivity. The thickness of the external electrode 35 in the thickness direction D1 of the mounting substrate 9 is smaller than the depth of the second recess 912, but is not limited to this, and may be, for example, less than or equal to the depth of the second recess 912.
　また、高周波モジュール１００では、実装基板９の厚さ方向Ｄ１からの平面視で、第３電子部品３の外形サイズが、第２凹部９１２のサイズよりも小さい。高周波モジュール１００では、実装基板９の厚さ方向Ｄ１からの平面視で、第３電子部品３の全部が第２凹部９１２の一部に重なる。「実装基板９の厚さ方向Ｄ１からの平面視で、第３電子部品３の全部が第２凹部９１２の一部に重なる」とは、実装基板９の厚さ方向Ｄ１からの平面視で、第３電子部品３が第２凹部９１２の領域内にあることを意味する。 Further, in the high frequency module 100, the external size of the third electronic component 3 is smaller than the size of the second recess 912 in a plan view from the thickness direction D1 of the mounting substrate 9. In the high frequency module 100, the entire third electronic component 3 overlaps a part of the second recess 912 in a plan view from the thickness direction D1 of the mounting substrate 9. "In a plan view from the thickness direction D1 of the mounting board 9, all of the third electronic components 3 overlap with a part of the second recess 912" is a plan view from the thickness direction D1 of the mounting board 9. It means that the third electronic component 3 is in the region of the second recess 912.
　第４電子部品４は、第３電子部品３の主面３１に配置されている。言い換えれば、第４電子部品４は、第３電子部品３にスタックされている。第４電子部品４は、複数の外部電極４５を有している。高周波モジュール１００では、第４電子部品４の複数の外部電極４５の各々は、導電性を有するバンプである。第４電子部品４は、複数の外部電極４５により第３電子部品３に接続されており、第３電子部品３を介して実装基板９に接続されている。高周波モジュール１００では、第４電子部品４の複数の外部電極４５は、第３電子部品３において第３電子部品３の厚さ方向に沿って形成されている貫通導体部等を介して実装基板９と電気的に接続されている。 The fourth electronic component 4 is arranged on the main surface 31 of the third electronic component 3. In other words, the fourth electronic component 4 is stacked on the third electronic component 3. The fourth electronic component 4 has a plurality of external electrodes 45. In the high frequency module 100, each of the plurality of external electrodes 45 of the fourth electronic component 4 is a bump having conductivity. The fourth electronic component 4 is connected to the third electronic component 3 by a plurality of external electrodes 45, and is connected to the mounting board 9 via the third electronic component 3. In the high frequency module 100, the plurality of external electrodes 45 of the fourth electronic component 4 are mounted on the mounting substrate 9 via a through conductor portion or the like formed along the thickness direction of the third electronic component 3 in the third electronic component 3. Is electrically connected to.
　第３電子部品３と第４電子部品４とを含むスタック構造体では、実装基板９の厚さ方向Ｄ１からの平面視で、第４電子部品４の外形サイズが第３電子部品３の外形サイズと同じであり、第４電子部品４の全部が第３電子部品３の全部に重なっている。第４電子部品４の外形サイズは、第３電子部品３の外形サイズと同じである場合に限らず、異なる外形サイズであってもよい。 In the stack structure including the third electronic component 3 and the fourth electronic component 4, the outer size of the fourth electronic component 4 is the outer size of the third electronic component 3 in a plan view from the thickness direction D1 of the mounting substrate 9. The same applies to the above, and all of the fourth electronic components 4 overlap with all of the third electronic components 3. The external size of the fourth electronic component 4 is not limited to the same as the external size of the third electronic component 3, and may be different external sizes.
　高周波モジュール１００では、樹脂層５は、第２電子部品２の主面２１と、第４電子部品４の主面４１と、を覆っていない。樹脂層５の主面５１は、第２電子部品２の主面２１及び第４電子部品４の主面４１と略面一である。樹脂層５は、実装基板９の厚さ方向Ｄ１において第１電子部品１と実装基板９における第１凹部９１１との間に介在するアンダーフィル部５４を含んでいる。また、樹脂層５は、実装基板９の厚さ方向Ｄ１において第３電子部品３と実装基板９における第２凹部９１２との間に介在するアンダーフィル部５５を含んでいる。 In the high frequency module 100, the resin layer 5 does not cover the main surface 21 of the second electronic component 2 and the main surface 41 of the fourth electronic component 4. The main surface 51 of the resin layer 5 is substantially flush with the main surface 21 of the second electronic component 2 and the main surface 41 of the fourth electronic component 4. The resin layer 5 includes an underfill portion 54 interposed between the first electronic component 1 and the first recess 911 in the mounting board 9 in the thickness direction D1 of the mounting board 9. Further, the resin layer 5 includes an underfill portion 55 interposed between the third electronic component 3 and the second recess 912 in the mounting board 9 in the thickness direction D1 of the mounting board 9.
　樹脂層５は、第１電子部品１の複数の外部電極１５の各々の側面の少なくとも一部も覆っている。また、樹脂層５は、第２電子部品２の複数の外部電極２５の各々の側面の少なくとも一部も覆っている。また、樹脂層５は、第３電子部品３の複数の外部電極３５の各々の側面の少なくとも一部も覆っている。また、樹脂層５は、第４電子部品４の複数の外部電極４５の各々の側面の少なくとも一部も覆っている。 The resin layer 5 also covers at least a part of each side surface of the plurality of external electrodes 15 of the first electronic component 1. Further, the resin layer 5 also covers at least a part of each side surface of the plurality of external electrodes 25 of the second electronic component 2. Further, the resin layer 5 also covers at least a part of each side surface of the plurality of external electrodes 35 of the third electronic component 3. Further, the resin layer 5 also covers at least a part of each side surface of the plurality of external electrodes 45 of the fourth electronic component 4.
　シールド層６は、第２電子部品２の主面２１及び第４電子部品４の主面４１に接している。高周波モジュール１００では、放熱性の向上を図る観点から、シールド層６が、第２電子部品２（第３送信フィルタ１３３）の主面２１の全域にわたって接しているのが好ましい。その理由は、第２電子部品２が送信系回路部品であり、第１パワーアンプ１１１と第２パワーアンプ１１２とのうち最大出力電力が大きな第２パワーアンプ１１２に接続されている第３送信フィルタ１３３であることによる。また、高周波モジュール１００では、放熱性の向上を図る観点から、シールド層６が、第４電子部品４（第１送信フィルタ１３１）の主面４１の全域にわたって接しているのが好ましい。また、シールド層６は、第２送信フィルタ１３２における実装基板９側とは反対側の主面に接していてもよい。 The shield layer 6 is in contact with the main surface 21 of the second electronic component 2 and the main surface 41 of the fourth electronic component 4. In the high frequency module 100, from the viewpoint of improving heat dissipation, it is preferable that the shield layer 6 is in contact with the entire main surface 21 of the second electronic component 2 (third transmission filter 133). The reason is that the second electronic component 2 is a transmission circuit component, and the third transmission filter connected to the second power amplifier 112 having the larger maximum output power among the first power amplifier 111 and the second power amplifier 112. Because it is 133. Further, in the high frequency module 100, from the viewpoint of improving heat dissipation, it is preferable that the shield layer 6 is in contact with the entire main surface 41 of the fourth electronic component 4 (first transmission filter 131). Further, the shield layer 6 may be in contact with the main surface of the second transmission filter 132 on the side opposite to the mounting board 9 side.
　高周波モジュール１００では、第２電子部品２の主面２１及び第４電子部品４の主面４１の各々は、粗面である。言い換えれば、高周波モジュール１００は、第２電子部品２の主面２１及び第４電子部品４の主面４１の各々に、微細な凹凸が形成されている。第２電子部品２の主面２１は、第１電子部品１の主面２１よりも粗い状態である。また、第４電子部品４の主面４１は、第３電子部品３の主面３１よりも粗い状態である。 In the high frequency module 100, each of the main surface 21 of the second electronic component 2 and the main surface 41 of the fourth electronic component 4 is a rough surface. In other words, in the high frequency module 100, fine irregularities are formed on each of the main surface 21 of the second electronic component 2 and the main surface 41 of the fourth electronic component 4. The main surface 21 of the second electronic component 2 is in a coarser state than the main surface 21 of the first electronic component 1. Further, the main surface 41 of the fourth electronic component 4 is in a rougher state than the main surface 31 of the third electronic component 3.
　高周波モジュール１００では、第２電子部品２の主面２１の最大高さ粗さ（Ｒｚ）が、第１電子部品１の主面１１の最大高さ粗さよりも大きい。また、高周波モジュール１００では、第４電子部品４の主面４１の最大高さ粗さが、第３電子部品３の主面３１の最大高さ粗さよりも大きい。第１電子部品１の主面１１、第２電子部品２の主面２１、第３電子部品３の主面３１及び第４電子部品４の主面４１の各々の最大高さ粗さは、高周波モジュール１００の断面をＳＴＥＭ（Scanning Transmission Electron Microscope）により観察したときのＳＴＥＭ像から測定した値である。最大高さ粗さは、ＳＴＥＭ像において、第１電子部品１の主面１１、第２電子部品２の主面２１、第３電子部品３の主面３１及び第４電子部品４の主面４１の各々に関し、山高さの最大値と谷深さの最大値との和である。つまり、最大高さ粗さは、第１電子部品１の主面１１、第２電子部品２の主面２１、第３電子部品３の主面３１及び第４電子部品４の主面４１の各々において、凹凸のPeak to Valleyの値である。第２電子部品２の主面２１及び第４電子部品４の主面４１の各々の表面粗さは、例えば、高周波モジュール１００の製造時に第２電子部品２及び第４電子部品４を研削等によって粗面化する処理の条件によって変えることができる。最大高さ粗さの相対的な大小関係を議論する上では、最大高さ粗さは、ＳＴＥＭ像に限らず、例えば、ＳＥＭ（Scanning Electron Microscope）像から求めた値でもよい。 In the high frequency module 100, the maximum height roughness (Rz) of the main surface 21 of the second electronic component 2 is larger than the maximum height roughness (Rz) of the main surface 11 of the first electronic component 1. Further, in the high frequency module 100, the maximum height roughness of the main surface 41 of the fourth electronic component 4 is larger than the maximum height roughness of the main surface 31 of the third electronic component 3. The maximum height roughness of each of the main surface 11 of the first electronic component 1, the main surface 21 of the second electronic component 2, the main surface 31 of the third electronic component 3, and the main surface 41 of the fourth electronic component 4 is high frequency. It is a value measured from the STEM image when the cross section of the module 100 is observed by STEM (Scanning Transmission Electron Microscope). The maximum height roughness is determined in the STEM image by the main surface 11 of the first electronic component 1, the main surface 21 of the second electronic component 2, the main surface 31 of the third electronic component 3, and the main surface 41 of the fourth electronic component 4. It is the sum of the maximum value of the mountain height and the maximum value of the valley depth for each of. That is, the maximum height roughness is the main surface 11 of the first electronic component 1, the main surface 21 of the second electronic component 2, the main surface 31 of the third electronic component 3, and the main surface 41 of the fourth electronic component 4, respectively. In, it is the value of Peak to Valley of unevenness. The surface roughness of each of the main surface 21 of the second electronic component 2 and the main surface 41 of the fourth electronic component 4 is determined by, for example, grinding the second electronic component 2 and the fourth electronic component 4 at the time of manufacturing the high frequency module 100. It can be changed depending on the conditions of the roughening process. In discussing the relative magnitude relationship of the maximum height roughness, the maximum height roughness is not limited to the STEM image, but may be, for example, a value obtained from an SEM (Scanning Electron Microscope) image.
　（１．４）高周波モジュールの製造方法
　高周波モジュール１００の製造方法としては、例えば、第１工程と、第２工程と、第３工程と、第４工程と、を備える製造方法を採用することができる。 (1.4) Manufacturing Method of High Frequency Module As a manufacturing method of the high frequency module 100, for example, a manufacturing method including a first step, a second step, a third step, and a fourth step can be adopted. can.
　第１工程は、第２主面９２に複数の外部接続端子８が配置された実装基板９の第１主面９１に、複数の回路部品のうち第２電子部品２、第４電子部品４及び第２送信フィルタ１３２以外の回路部品を実装し、その後、第１電子部品１上に第２電子部品２を配置し、第３電子部品３上に第４電子部品４を配置し、第２受信フィルタ１７２上に第２送信フィルタ１３２を配置する工程である。 In the first step, among the plurality of circuit components, the second electronic component 2, the fourth electronic component 4, and the first main surface 91 of the mounting board 9 in which the plurality of external connection terminals 8 are arranged on the second main surface 92 A circuit component other than the second transmission filter 132 is mounted, then the second electronic component 2 is arranged on the first electronic component 1, the fourth electronic component 4 is arranged on the third electronic component 3, and the second reception is performed. This is a step of arranging the second transmission filter 132 on the filter 172.
　第２工程は、複数の回路部品等を覆い、樹脂層５の元になる樹脂材料層を実装基板９の第１主面９１側に形成する工程である。 The second step is a step of covering a plurality of circuit parts and the like and forming a resin material layer which is a source of the resin layer 5 on the first main surface 91 side of the mounting substrate 9.
　第３工程は、樹脂材料層における実装基板９側とは反対側の主面から樹脂材料層を研削し、さらに、樹脂材料層と、第２電子部品２（第３送信フィルタ１３３）と、第４電子部品４（第１送信フィルタ１３１）と、第２送信フィルタ１３２と、を研削することで、樹脂層５を形成するとともに第２電子部品２、第４電子部品４及び第２送信フィルタ１３２それぞれの厚さを薄くする工程である。第３工程は、第２電子部品２、第４電子部品４及び第２送信フィルタ１３２を研削することで、第２電子部品２の主面２１、第４電子部品４の主面４１及び第２送信フィルタ１３２の主面を粗面化している（荒らしている）。 In the third step, the resin material layer is ground from the main surface of the resin material layer opposite to the mounting substrate 9, and further, the resin material layer, the second electronic component 2 (third transmission filter 133), and the third. 4 The resin layer 5 is formed by grinding the electronic component 4 (first transmission filter 131) and the second transmission filter 132, and the second electronic component 2, the fourth electronic component 4, and the second transmission filter 132 are formed. This is a process of reducing the thickness of each. In the third step, the second electronic component 2, the fourth electronic component 4, and the second transmission filter 132 are ground to grind the main surface 21 of the second electronic component 2, the main surface 41 of the fourth electronic component 4, and the second. The main surface of the transmission filter 132 is roughened (roughened).
　第４工程は、シールド層６を例えばスパッタ法、蒸着法、又は印刷法によって形成する工程である。 The fourth step is a step of forming the shield layer 6 by, for example, a sputtering method, a vapor deposition method, or a printing method.
　（２）効果
　（２．１）高周波モジュール
　実施形態１に係る高周波モジュール１００は、実装基板９と、第１電子部品１と、第２電子部品２と、を備える。実装基板９は、互いに対向する第１主面９１及び第２主面９２を有する。第１電子部品１は、実装基板９の第１主面９１に実装されている。第２電子部品２は、第１電子部品１上に配置されている。実装基板９の第１主面９１は、凹部９１１を有する。第１電子部品１は、実装基板９の第１主面９１において凹部９１１に実装されている。 (2) Effect (2.1) High Frequency Module The high frequency module 100 according to the first embodiment includes a mounting board 9, a first electronic component 1, and a second electronic component 2. The mounting board 9 has a first main surface 91 and a second main surface 92 facing each other. The first electronic component 1 is mounted on the first main surface 91 of the mounting board 9. The second electronic component 2 is arranged on the first electronic component 1. The first main surface 91 of the mounting board 9 has a recess 911. The first electronic component 1 is mounted in the recess 911 on the first main surface 91 of the mounting board 9.
　実施形態１に係る高周波モジュール１００は、低背化を図ることが可能となる。より詳細には、実施形態１に係る高周波モジュール１００は、第１電子部品１と第１電子部品１の主面１１に配置された第２電子部品２とを備える構成において、実装基板９の厚さ方向Ｄ１における高周波モジュール１００の低背化を図ることが可能となる。したがって、高周波モジュール１００は、実装基板９の厚さ方向Ｄ１からの平面視での高周波モジュール１００の小型化を図りつつ、実装基板９の厚さ方向Ｄ１における高周波モジュール１００の低背化を図ることが可能となる。 The high frequency module 100 according to the first embodiment can be made low in height. More specifically, the high frequency module 100 according to the first embodiment has a configuration in which the first electronic component 1 and the second electronic component 2 arranged on the main surface 11 of the first electronic component 1 are provided, and the thickness of the mounting substrate 9 is increased. It is possible to reduce the height of the high frequency module 100 in the vertical direction D1. Therefore, the high-frequency module 100 aims to reduce the height of the high-frequency module 100 in the thickness direction D1 of the mounting substrate 9 while reducing the size of the high-frequency module 100 in a plan view from the thickness direction D1 of the mounting substrate 9. Is possible.
　実施形態１に係る高周波モジュール１００は、樹脂層５と、シールド層６と、を更に備える。樹脂層５は、実装基板９の第１主面９１に配置されている。樹脂層５は、第１電子部品１の外周面１３及び第２電子部品２の外周面２３を覆っている。シールド層６は、樹脂層５における実装基板９側とは反対側の主面５１と、第１電子部品１と第２電子部品２とを含む複数の電子部品７を有するスタック構造体１０の一部と、を覆っている。スタック構造体１０における複数の電子部品７のうち実装基板９から最も遠い電子部品７における実装基板９側とは反対側の主面７１（図２参照）は、シールド層６に接している。実施形態１に係る高周波モジュール１００では、スタック構造体１０における複数の電子部品７のうち実装基板９から最も遠い電子部品７の主面７１は、第２電子部品２の主面２１である。 The high frequency module 100 according to the first embodiment further includes a resin layer 5 and a shield layer 6. The resin layer 5 is arranged on the first main surface 91 of the mounting substrate 9. The resin layer 5 covers the outer peripheral surface 13 of the first electronic component 1 and the outer peripheral surface 23 of the second electronic component 2. The shield layer 6 is one of the stack structures 10 having a main surface 51 of the resin layer 5 opposite to the mounting substrate 9 side, and a plurality of electronic components 7 including the first electronic component 1 and the second electronic component 2. It covers the part and. Of the plurality of electronic components 7 in the stack structure 10, the main surface 71 (see FIG. 2) of the electronic component 7 farthest from the mounting board 9 on the side opposite to the mounting board 9 side is in contact with the shield layer 6. In the high frequency module 100 according to the first embodiment, the main surface 71 of the electronic component 7 farthest from the mounting board 9 among the plurality of electronic components 7 in the stack structure 10 is the main surface 21 of the second electronic component 2.
　実施形態１に係る高周波モジュール１００は、スタック構造体１０における複数の電子部品７のうち実装基板９から最も遠い電子部品７で発生する熱を、シールド層６を通して放熱させやすくできる。また、実施形態１に係る高周波モジュール１００は、スタック構造体１０における複数の電子部品７のうち実装基板９から最も遠い電子部品７で発生する熱が実装基板９に実装されている電子部品７（第１電子部品１）等に伝熱されにくくなる。 The high-frequency module 100 according to the first embodiment can easily dissipate heat generated in the electronic component 7 farthest from the mounting board 9 among the plurality of electronic components 7 in the stack structure 10 through the shield layer 6. Further, in the high frequency module 100 according to the first embodiment, the heat generated in the electronic component 7 farthest from the mounting board 9 among the plurality of electronic components 7 in the stack structure 10 is mounted on the mounting board 9 (the electronic component 7 (). It becomes difficult for heat to be transferred to the first electronic component 1) or the like.
　実施形態１に係る高周波モジュール１００では、スタック構造体１０における複数の電子部品７のうち実装基板９から最も遠い電子部品７は、送信系回路部品（第３送信フィルタ１３３により構成される第２電子部品２）である。 In the high frequency module 100 according to the first embodiment, among the plurality of electronic components 7 in the stack structure 10, the electronic component 7 farthest from the mounting board 9 is a transmission system component (second electron configured by the third transmission filter 133). Part 2).
　実施形態１に係る高周波モジュール１００では、受信系回路部品（受信フィルタ１７３）と比べて発熱しやすい送信系回路部品（送信フィルタ１３３）である第２電子部品２の温度上昇を抑制することが可能となる。 In the high frequency module 100 according to the first embodiment, it is possible to suppress the temperature rise of the second electronic component 2 which is a transmission system component (transmission filter 133) that generates heat more easily than the reception system circuit component (reception filter 173). It becomes.
　また、高周波モジュール１００では、第１電子部品１は、所定の通信バンド（第３通信バンド）の受信帯域を通過帯域とする受信フィルタ１７３である。第２電子部品２は、上記所定の通信バンド（第３通信バンド）の送信帯域を通過帯域とする送信フィルタ１３３である。これにより、高周波モジュール１００は、送信フィルタ１３３と受信フィルタ１７３との間の配線の長さを短くすることが可能となる。これにより、高周波モジュール１００は、送信フィルタ１３３と受信フィルタ１７３との間の配線による浮遊容量を低減でき、送信フィルタ１３３のフィルタ特性及び受信フィルタ１７３のフィルタ特性を向上させることが可能となる。 Further, in the high frequency module 100, the first electronic component 1 is a reception filter 173 whose pass band is the reception band of a predetermined communication band (third communication band). The second electronic component 2 is a transmission filter 133 having a transmission band of the predetermined communication band (third communication band) as a pass band. This makes it possible for the high frequency module 100 to shorten the length of the wiring between the transmission filter 133 and the reception filter 173. As a result, the high frequency module 100 can reduce the stray capacitance due to the wiring between the transmission filter 133 and the reception filter 173, and can improve the filter characteristics of the transmission filter 133 and the filter characteristics of the reception filter 173.
　また、高周波モジュール１００では、第２電子部品２の主面２１が、粗面である。これにより、高周波モジュール１００は、第２電子部品２の主面２１とシールド層６との密着性を向上させることが可能となる。 Further, in the high frequency module 100, the main surface 21 of the second electronic component 2 is a rough surface. As a result, the high frequency module 100 can improve the adhesion between the main surface 21 of the second electronic component 2 and the shield layer 6.
　（２．２）通信装置
　実施形態１に係る通信装置３００は、信号処理回路３０１と、高周波モジュール１００と、を備える。信号処理回路３０１は、高周波モジュール１００に接続されている。 (2.2) Communication device The communication device 300 according to the first embodiment includes a signal processing circuit 301 and a high frequency module 100. The signal processing circuit 301 is connected to the high frequency module 100.
　実施形態１に係る通信装置３００は、高周波モジュール１００を備えるので、低背化を図ることが可能となる。 Since the communication device 300 according to the first embodiment includes the high frequency module 100, it is possible to reduce the height.
　信号処理回路３０１を構成する複数の電子部品は、例えば、上述の回路基板に実装されていてもよいし、高周波モジュール１００が実装された回路基板（第１回路基板）とは別の回路基板（第２回路基板）に実装されていてもよい。 The plurality of electronic components constituting the signal processing circuit 301 may be mounted on, for example, the above-mentioned circuit board, or a circuit board (first circuit board) different from the circuit board (first circuit board) on which the high frequency module 100 is mounted. It may be mounted on the second circuit board).
　（実施形態２）
　実施形態２に係る高周波モジュール１００ａについて、図４を参照して説明する。実施形態２に係る高周波モジュール１００ａに関し、実施形態１に係る高周波モジュール１００と同様の構成要素については、同一の符号を付して説明を省略する。 (Embodiment 2)
The high frequency module 100a according to the second embodiment will be described with reference to FIG. Regarding the high frequency module 100a according to the second embodiment, the same components as the high frequency module 100 according to the first embodiment are designated by the same reference numerals and the description thereof will be omitted.
　実施形態２に係る高周波モジュール１００ａは、第１電子部品１がＩＣチップ１０８である点で、実施形態１に係る高周波モジュール１００と相違する。また、高周波モジュール１００ａは、第１電子部品１上に配置されている第２電子部品２を複数（例えば、２つ）備える点で、実施形態１に係る高周波モジュール１００と相違する。 The high frequency module 100a according to the second embodiment is different from the high frequency module 100 according to the first embodiment in that the first electronic component 1 is an IC chip 108. Further, the high frequency module 100a is different from the high frequency module 100 according to the first embodiment in that it includes a plurality of (for example, two) second electronic components 2 arranged on the first electronic component 1.
　高周波モジュール１００ａでは、実装基板９の厚さ方向Ｄ１からの平面視で、第１電子部品１の外形サイズが２つの第２電子部品２の外形サイズよりも大きい。２つの第２電子部品２は、１つの第１電子部品１上に配置されている。ここで、２つの第２電子部品２は、１つの第１電子部品１における実装基板９側とは反対側の主面１１に配置されている。高周波モジュール１００ａでは、実装基板９の厚さ方向Ｄ１からの平面視で、２つの第２電子部品２の全部が第１電子部品１の主面１１の一部に重なる。２つの第２電子部品２のうち一方の第２電子部品２は、第３送信フィルタ１３３であり、他方の第２電子部品２は、第２送信フィルタ１３２である。 In the high frequency module 100a, the outer size of the first electronic component 1 is larger than the outer size of the two second electronic components 2 in a plan view from the thickness direction D1 of the mounting substrate 9. The two second electronic components 2 are arranged on one first electronic component 1. Here, the two second electronic components 2 are arranged on the main surface 11 on the side opposite to the mounting board 9 side in the one first electronic component 1. In the high frequency module 100a, all of the two second electronic components 2 overlap with a part of the main surface 11 of the first electronic component 1 in a plan view from the thickness direction D1 of the mounting substrate 9. One of the second electronic components 2 of the two second electronic components 2 is the third transmission filter 133, and the other second electronic component 2 is the second transmission filter 132.
　高周波モジュール１００ａでは、２つの第２電子部品２は、実装基板９の厚さ方向Ｄ１に沿った方向においてシールド層６とは離れており、シールド層６に接していない。高周波モジュール１００ａでは、２つの第２電子部品２の主面２１とシールド層６との間には、樹脂層５の一部が介在している。２つの第２電子部品２の各々は、複数の外部電極２５を有する（図４では、２つの第２電子部品２の各々に関し、複数の外部電極２５のうち１つのみ見えている）。複数の外部電極２５は、グランド電極２６を含む。２つの第２電子部品２は、複数の外部電極２５が実装基板９の厚さ方向Ｄ１においてシールド層６側に位置するように第１電子部品１の主面１１に配置されている。２つの第２電子部品２は、第１電子部品１の主面１１に接合されている。 In the high frequency module 100a, the two second electronic components 2 are separated from the shield layer 6 in the direction along the thickness direction D1 of the mounting substrate 9 and are not in contact with the shield layer 6. In the high frequency module 100a, a part of the resin layer 5 is interposed between the main surface 21 of the two second electronic components 2 and the shield layer 6. Each of the two second electronic components 2 has a plurality of external electrodes 25 (in FIG. 4, only one of the plurality of external electrodes 25 is visible for each of the two second electronic components 2). The plurality of external electrodes 25 include a ground electrode 26. The two second electronic components 2 are arranged on the main surface 11 of the first electronic component 1 so that the plurality of external electrodes 25 are located on the shield layer 6 side in the thickness direction D1 of the mounting substrate 9. The two second electronic components 2 are joined to the main surface 11 of the first electronic component 1.
　高周波モジュール１００ａは、第２電子部品２の外部電極２５と実装基板９とを接続しているボンディングワイヤＷ２０を備える。ボンディングワイヤＷ２０は、金属細線である。ボンディングワイヤＷ２０の材料は、例えば、金、アルミニウム合金又は銅である。また、高周波モジュール１００ａは、第１ワイヤＷ２１と、第２ワイヤＷ２２と、を備える。第２電子部品２のグランド電極２６は、第１ワイヤＷ２１と、シールド層６の一部と、第２ワイヤＷ２２と、を介して実装基板９と接続されている。第１ワイヤＷ２１は、線状である。第１ワイヤＷ２１は、例えば、ボンディングワイヤＷ２０と同じ線径を有する金属細線である。第１ワイヤＷ２１は、第２電子部品２の有するグランド電極２６とシールド層６とを接続している。第２ワイヤＷ２２は、線状である。第２ワイヤＷ２２は、第１ワイヤＷ２１と同じ線径の金属細線である。第２ワイヤＷ２２は、シールド層６と実装基板９とを接続している。第１ワイヤＷ２１及び第２ワイヤＷ２２の材料は、同じである。第１ワイヤＷ２１及び第２ワイヤＷ２２の材料は、例えば、ボンディングワイヤＷ２０の材料と同じである。 The high frequency module 100a includes a bonding wire W20 that connects the external electrode 25 of the second electronic component 2 and the mounting substrate 9. The bonding wire W20 is a thin metal wire. The material of the bonding wire W20 is, for example, gold, an aluminum alloy or copper. Further, the high frequency module 100a includes a first wire W21 and a second wire W22. The ground electrode 26 of the second electronic component 2 is connected to the mounting substrate 9 via the first wire W21, a part of the shield layer 6, and the second wire W22. The first wire W21 is linear. The first wire W21 is, for example, a thin metal wire having the same wire diameter as the bonding wire W20. The first wire W21 connects the ground electrode 26 of the second electronic component 2 and the shield layer 6. The second wire W22 is linear. The second wire W22 is a thin metal wire having the same wire diameter as the first wire W21. The second wire W22 connects the shield layer 6 and the mounting board 9. The materials of the first wire W21 and the second wire W22 are the same. The materials of the first wire W21 and the second wire W22 are, for example, the same as the materials of the bonding wire W20.
　ＩＣチップ１０８は、ＩＰＤ（Integrated Passive Device）を含む。ＩＰＤは、高周波モジュール１００ａにおける送信経路に設けられるＬＣフィルタであり、例えば、高周波モジュール１００ａにおいて第３送信フィルタ１３３を含む送信経路に設けられるハーモニックリジェクション用のＬＣフィルタである。このＬＣフィルタは、例えば、第３送信フィルタ１３３を通過する第３通信バンドの送信信号（高周波信号）の２次高調波と３次高調波との少なくとも一方を減衰させるフィルタである。また、ＩＣチップ１０８は、第１スイッチ１０４、第２スイッチ１０５及び第３スイッチ１０６を含む。 The IC chip 108 includes an IPD (Integrated Passive Device). The IPD is an LC filter provided in the transmission path of the high frequency module 100a, and is, for example, an LC filter for harmonic rejection provided in the transmission path including the third transmission filter 133 in the high frequency module 100a. This LC filter is, for example, a filter that attenuates at least one of a second harmonic and a third harmonic of a transmission signal (high frequency signal) of the third communication band that passes through the third transmission filter 133. Further, the IC chip 108 includes a first switch 104, a second switch 105, and a third switch 106.
　実施形態２に係る高周波モジュール１００ａは、実装基板９と、第１電子部品１と、第２電子部品２と、を備える。実装基板９は、互いに対向する第１主面９１及び第２主面９２を有する。第１電子部品１は、実装基板９の第１主面９１に実装されている。第２電子部品２は、第１電子部品１上に配置されている。実装基板９の第１主面９１は、凹部９１１を有する。第１電子部品１は、実装基板９の第１主面９１において凹部９１１に実装されている。これにより、実施形態２に係る高周波モジュール１００ａは、低背化を図ることが可能となる。より詳細には、実施形態２に係る高周波モジュール１００ａは、第１電子部品１と第１電子部品１上に配置された第２電子部品２とを備える構成において、実装基板９の厚さ方向Ｄ１における高周波モジュール１００ａの低背化を図ることが可能となる。 The high frequency module 100a according to the second embodiment includes a mounting board 9, a first electronic component 1, and a second electronic component 2. The mounting board 9 has a first main surface 91 and a second main surface 92 facing each other. The first electronic component 1 is mounted on the first main surface 91 of the mounting board 9. The second electronic component 2 is arranged on the first electronic component 1. The first main surface 91 of the mounting board 9 has a recess 911. The first electronic component 1 is mounted in the recess 911 on the first main surface 91 of the mounting board 9. This makes it possible to reduce the height of the high frequency module 100a according to the second embodiment. More specifically, the high frequency module 100a according to the second embodiment has a configuration including a first electronic component 1 and a second electronic component 2 arranged on the first electronic component 1, and the thickness direction D1 of the mounting substrate 9 is provided. It is possible to reduce the height of the high frequency module 100a in the above.
　また、高周波モジュール１００ａは、複数の第２電子部品２が１つの第１電子部品１の主面１１に配置されているので、実装基板９の厚さ方向Ｄ１からの平面視での高周波モジュール１００ａの外形サイズの小型化を図ることが可能となる。 Further, in the high frequency module 100a, since the plurality of second electronic components 2 are arranged on the main surface 11 of one first electronic component 1, the high frequency module 100a in a plan view from the thickness direction D1 of the mounting substrate 9 It is possible to reduce the size of the external size of the module.
　また、高周波モジュール１００ａでは、線状の第１ワイヤＷ２１が、第２電子部品２の有するグランド電極２６とシールド層６とを接続し、線状の第２ワイヤＷ２２が、シールド層６と実装基板９とを接続している。これにより、高周波モジュール１００ａは、第２電子部品２のグランド電極２６を、第１電子部品１を介さずに実装基板９に接続でき、しかもグランド電極２６をシールド層６にも接続することができる。 Further, in the high frequency module 100a, the linear first wire W21 connects the ground electrode 26 of the second electronic component 2 and the shield layer 6, and the linear second wire W22 connects the shield layer 6 and the mounting substrate. It is connected to 9. As a result, the high frequency module 100a can connect the ground electrode 26 of the second electronic component 2 to the mounting substrate 9 without going through the first electronic component 1, and can also connect the ground electrode 26 to the shield layer 6. ..
　（実施形態３）
　実施形態３に係る高周波モジュール１００ｂについて、図５を参照して説明する。実施形態３に係る高周波モジュール１００ｂに関し、実施形態１に係る高周波モジュール１００と同様の構成要素については、同一の符号を付して説明を省略する。 (Embodiment 3)
The high frequency module 100b according to the third embodiment will be described with reference to FIG. Regarding the high frequency module 100b according to the third embodiment, the same components as the high frequency module 100 according to the first embodiment are designated by the same reference numerals and the description thereof will be omitted.
　実施形態３に係る高周波モジュール１００ｂは、第１電子部品１がパワーアンプ１１１である点で、実施形態１に係る高周波モジュール１００と相違する。また、高周波モジュール１００ｂは、第２電子部品２がコントローラ１１５である点で、実施形態１に係る高周波モジュール１００と相違する。 The high frequency module 100b according to the third embodiment is different from the high frequency module 100 according to the first embodiment in that the first electronic component 1 is a power amplifier 111. Further, the high frequency module 100b is different from the high frequency module 100 according to the first embodiment in that the second electronic component 2 is the controller 115.
　高周波モジュール１００ｂでは、実装基板９の厚さ方向Ｄ１からの平面視で、第２電子部品２の外形サイズが第１電子部品１の外形サイズよりも小さい。高周波モジュール１００ｂでは、実装基板９の厚さ方向Ｄ１からの平面視で、第２電子部品２の全部が第１電子部品１の主面１１の一部に重なる。 In the high frequency module 100b, the outer size of the second electronic component 2 is smaller than the outer size of the first electronic component 1 in a plan view from the thickness direction D1 of the mounting substrate 9. In the high frequency module 100b, the entire second electronic component 2 overlaps a part of the main surface 11 of the first electronic component 1 in a plan view from the thickness direction D1 of the mounting substrate 9.
　高周波モジュール１００ｂでは、第２電子部品２は、実装基板９の厚さ方向Ｄ１に沿った方向においてシールド層６とは離れており、シールド層６に接していない。高周波モジュール１００ｂでは、第２電子部品２の主面２１とシールド層６との間には、樹脂層５の一部が介在している。第２電子部品２は、複数の外部電極２５を有する（図５では、複数の外部電極２５のうち１つのみ見えている）。第２電子部品２は、複数の外部電極２５が実装基板９の厚さ方向Ｄ１においてシールド層６側に位置するように第１電子部品１の主面１１に配置されている。第２電子部品２は、第１電子部品１の主面１１に接合されている。 In the high frequency module 100b, the second electronic component 2 is separated from the shield layer 6 in the direction along the thickness direction D1 of the mounting substrate 9 and is not in contact with the shield layer 6. In the high frequency module 100b, a part of the resin layer 5 is interposed between the main surface 21 of the second electronic component 2 and the shield layer 6. The second electronic component 2 has a plurality of external electrodes 25 (in FIG. 5, only one of the plurality of external electrodes 25 is visible). The second electronic component 2 is arranged on the main surface 11 of the first electronic component 1 so that the plurality of external electrodes 25 are located on the shield layer 6 side in the thickness direction D1 of the mounting substrate 9. The second electronic component 2 is joined to the main surface 11 of the first electronic component 1.
　高周波モジュール１００ｂは、第２電子部品２の複数の外部電極２５と実装基板９とを接続している複数のボンディングワイヤＷ２０を備える。複数のボンディングワイヤＷ２０の各々は、金属細線である。各ボンディングワイヤＷ２０の材料は、例えば、金、アルミニウム合金又は銅である。 The high frequency module 100b includes a plurality of bonding wires W20 connecting the plurality of external electrodes 25 of the second electronic component 2 and the mounting substrate 9. Each of the plurality of bonding wires W20 is a thin metal wire. The material of each bonding wire W20 is, for example, gold, aluminum alloy or copper.
　実施形態３に係る高周波モジュール１００ｂは、実装基板９と、第１電子部品１と、第２電子部品２と、を備える。実装基板９は、互いに対向する第１主面９１及び第２主面９２を有する。第１電子部品１は、実装基板９の第１主面９１に実装されている。第２電子部品２は、第１電子部品１上に配置されている。実装基板９の第１主面９１は、凹部９１１を有する。第１電子部品１は、実装基板９の第１主面９１において凹部９１１に実装されている。これにより、実施形態３に係る高周波モジュール１００ｂは、低背化を図ることが可能となる。より詳細には、実施形態３に係る高周波モジュール１００ｂは、第１電子部品１と第１電子部品１上に配置された第２電子部品２とを備える構成において、実装基板９の厚さ方向Ｄ１における高周波モジュール１００ｂの低背化を図ることが可能となる。 The high frequency module 100b according to the third embodiment includes a mounting board 9, a first electronic component 1, and a second electronic component 2. The mounting board 9 has a first main surface 91 and a second main surface 92 facing each other. The first electronic component 1 is mounted on the first main surface 91 of the mounting board 9. The second electronic component 2 is arranged on the first electronic component 1. The first main surface 91 of the mounting board 9 has a recess 911. The first electronic component 1 is mounted in the recess 911 on the first main surface 91 of the mounting board 9. This makes it possible to reduce the height of the high frequency module 100b according to the third embodiment. More specifically, the high frequency module 100b according to the third embodiment has a configuration including a first electronic component 1 and a second electronic component 2 arranged on the first electronic component 1, and the thickness direction D1 of the mounting substrate 9 is provided. It is possible to reduce the height of the high frequency module 100b in the above.
　高周波モジュール１００ｂでは、実装基板９の厚さ方向Ｄ１からの平面視で、第２電子部品２の外形サイズが第１電子部品１の外形サイズよりも小さい。これにより、高周波モジュール１００ｂは、第２電子部品２の外形サイズが第１電子部品１の外形サイズと同じである場合又は第１電子部品１の外形サイズよりも大きい場合と比べて、高周波モジュール１００ｂの製造時において、第２電子部品２の外部電極２５に対してボンディングワイヤＷ２０をボンディングする際に安定してボンディングすることが可能となる。 In the high frequency module 100b, the outer size of the second electronic component 2 is smaller than the outer size of the first electronic component 1 in a plan view from the thickness direction D1 of the mounting substrate 9. As a result, the high frequency module 100b has a high frequency module 100b as compared with the case where the external size of the second electronic component 2 is the same as the external size of the first electronic component 1 or larger than the external size of the first electronic component 1. At the time of manufacturing, the bonding wire W20 can be stably bonded to the external electrode 25 of the second electronic component 2.
　高周波モジュール１００ｂは、第１電子部品１と第２電子部品２とのうち第１電子部品１がパワーアンプ１１１により構成されているので、パワーアンプ１１１で発生する熱を、実装基板９を通して放熱させやすくなる。この場合、実装基板９は、その厚さ方向Ｄ１においてパワーアンプ１１１に重なる領域に、実装基板９の厚さ方向Ｄ１に沿って形成された放熱用導体を有するのが好ましい。 In the high frequency module 100b, since the first electronic component 1 of the first electronic component 1 and the second electronic component 2 is composed of the power amplifier 111, the heat generated by the power amplifier 111 is dissipated through the mounting substrate 9. It will be easier. In this case, it is preferable that the mounting board 9 has a heat-dissipating conductor formed along the thickness direction D1 of the mounting board 9 in a region overlapping the power amplifier 111 in the thickness direction D1.
　（実施形態４）
　実施形態４に係る高周波モジュール１００ｃについて、図６を参照して説明する。実施形態４に係る高周波モジュール１００ｃに関し、実施形態１に係る高周波モジュール１００と同様の構成要素については、同一の符号を付して説明を省略する。 (Embodiment 4)
The high frequency module 100c according to the fourth embodiment will be described with reference to FIG. Regarding the high frequency module 100c according to the fourth embodiment, the same components as the high frequency module 100 according to the first embodiment are designated by the same reference numerals and the description thereof will be omitted.
　実施形態４に係る高周波モジュール１００ｃは、第１スイッチ１０４と第２スイッチ１０５と第３スイッチ１０６とローノイズアンプ１２１とを含むＩＣチップ１０９が実装基板９の第２主面９２に実装されている点で、実施形態１に係る高周波モジュール１００と相違する。高周波モジュール１００ｃでは、ＩＣチップ１０９が、実装基板９の第２主面９２に実装されている第５電子部品２０５を構成している。つまり、高周波モジュール１００ｃでは、第５電子部品２０５が実装基板９の第２主面９２に実装されている。「第５電子部品２０５が実装基板９の第２主面９２に実装されている」とは、第５電子部品２０５が実装基板９の第２主面９２に配置されていること（機械的に接続されていること）と、第５電子部品２０５が実装基板９（の適宜の導体部）と電気的に接続されていることと、を含む。また、高周波モジュール１００ｃは、実装基板９の第１主面９１に配置されている樹脂層５（以下、第１樹脂層５ともいう）とは別に、実装基板９の第２主面９２に配置されている樹脂層２０６（以下、第２樹脂層２０６ともいう）を更に備える点で、実施形態１に係る高周波モジュール１００と相違する。 In the high frequency module 100c according to the fourth embodiment, the IC chip 109 including the first switch 104, the second switch 105, the third switch 106, and the low noise amplifier 121 is mounted on the second main surface 92 of the mounting board 9. Therefore, it is different from the high frequency module 100 according to the first embodiment. In the high frequency module 100c, the IC chip 109 constitutes the fifth electronic component 205 mounted on the second main surface 92 of the mounting board 9. That is, in the high frequency module 100c, the fifth electronic component 205 is mounted on the second main surface 92 of the mounting board 9. "The fifth electronic component 205 is mounted on the second main surface 92 of the mounting board 9" means that the fifth electronic component 205 is arranged on the second main surface 92 of the mounting board 9 (mechanically). (Being connected) and that the fifth electronic component 205 is electrically connected to (the appropriate conductor portion) of the mounting substrate 9. Further, the high frequency module 100c is arranged on the second main surface 92 of the mounting board 9 separately from the resin layer 5 (hereinafter, also referred to as the first resin layer 5) arranged on the first main surface 91 of the mounting board 9. It is different from the high frequency module 100 according to the first embodiment in that the resin layer 206 (hereinafter, also referred to as the second resin layer 206) is further provided.
　複数の外部接続端子８の材料は、例えば、金属（例えば、銅、銅合金等）である。複数の外部接続端子８の各々は、柱状電極である。柱状電極は、例えば、円柱状の電極である。複数の外部接続端子８は、実装基板９の適宜の導体部に対して、例えば、はんだにより接合されているが、これに限らず、例えば、導電性接着剤（例えば、導電性ペースト）を用いて接合されていてもよいし、直接接合されていてもよい。 The material of the plurality of external connection terminals 8 is, for example, a metal (for example, copper, copper alloy, etc.). Each of the plurality of external connection terminals 8 is a columnar electrode. The columnar electrode is, for example, a columnar electrode. The plurality of external connection terminals 8 are bonded to an appropriate conductor portion of the mounting substrate 9 by, for example, solder, but the present invention is not limited to this, and for example, a conductive adhesive (for example, a conductive paste) is used. It may be joined by soldering, or it may be directly joined.
　第５電子部品２０５は、上述のように、実装基板９の第２主面９２に実装されている。第５電子部品２０５は、実装基板９の第２主面９２に接続されている複数の外部電極２１５を有している。複数の外部電極２１５の各々は、導電性を有するバンプである。 As described above, the fifth electronic component 205 is mounted on the second main surface 92 of the mounting board 9. The fifth electronic component 205 has a plurality of external electrodes 215 connected to the second main surface 92 of the mounting substrate 9. Each of the plurality of external electrodes 215 is a bump having conductivity.
　第２樹脂層２０６は、実装基板９の第２主面９２に実装されている第５電子部品２０５の外周面２５３と、複数の外部接続端子８それぞれの外周面と、を覆っている。第２樹脂層２０６は、樹脂（例えば、エポキシ樹脂）を含む。第２樹脂層２０６は、樹脂の他にフィラーを含んでいてもよい。第２樹脂層２０６の材料は、第１樹脂層５の材料と同じ材料であってもよいし、異なる材料であってもよい。第２樹脂層２０６は、第５電子部品２０５における実装基板９側とは反対側の主面２５１を覆っていない。また、第２樹脂層２０６は、複数の外部接続端子８における実装基板９側とは反対側の先端面８００を覆っていない。高周波モジュール１００ｃでは、第５電子部品２０５の主面２５１と、複数の外部接続端子８の先端面８００と、第２樹脂層２０６における実装基板９側とは反対側の主面２６１と、が略面一となっている。 The second resin layer 206 covers the outer peripheral surface 253 of the fifth electronic component 205 mounted on the second main surface 92 of the mounting board 9, and the outer peripheral surface of each of the plurality of external connection terminals 8. The second resin layer 206 contains a resin (for example, an epoxy resin). The second resin layer 206 may contain a filler in addition to the resin. The material of the second resin layer 206 may be the same material as the material of the first resin layer 5, or may be a different material. The second resin layer 206 does not cover the main surface 251 on the side opposite to the mounting board 9 side in the fifth electronic component 205. Further, the second resin layer 206 does not cover the tip surface 800 on the side opposite to the mounting board 9 side in the plurality of external connection terminals 8. In the high frequency module 100c, the main surface 251 of the fifth electronic component 205, the tip surface 800 of the plurality of external connection terminals 8, and the main surface 261 of the second resin layer 206 opposite to the mounting board 9 side are omitted. It is flush.
　高周波モジュール１００ｃでは、シールド層６は、第２樹脂層２０６の外周面２６３も覆っている。 In the high frequency module 100c, the shield layer 6 also covers the outer peripheral surface 263 of the second resin layer 206.
　高周波モジュール１００ｃは、実施形態１に係る高周波モジュール１００と比べて、実装基板９の厚さが薄い。高周波モジュール１００ｃでは、実施形態１に係る高周波モジュール１００と比べて、第１凹部９１１の深さが浅い。高周波モジュール１００ｃでは、実施形態１に係る高周波モジュール１００と比べて、第２凹部９１２の深さが浅い。高周波モジュール１００ｃでは、第１凹部９１１の深さは、第１電子部品１の複数の外部電極１５の厚さと略同じである。また、高周波モジュール１００ｃでは、第２凹部９１２の深さは、第３電子部品３の複数の外部電極３５の厚さと略同じである。 The high frequency module 100c has a thinner mounting substrate 9 than the high frequency module 100 according to the first embodiment. In the high frequency module 100c, the depth of the first recess 911 is shallower than that of the high frequency module 100 according to the first embodiment. In the high frequency module 100c, the depth of the second recess 912 is shallower than that of the high frequency module 100 according to the first embodiment. In the high frequency module 100c, the depth of the first recess 911 is substantially the same as the thickness of the plurality of external electrodes 15 of the first electronic component 1. Further, in the high frequency module 100c, the depth of the second recess 912 is substantially the same as the thickness of the plurality of external electrodes 35 of the third electronic component 3.
　実施形態４に係る高周波モジュール１００ｃは、実装基板９と、第１電子部品１と、第２電子部品２と、を備える。実装基板９は、互いに対向する第１主面９１及び第２主面９２を有する。第１電子部品１は、実装基板９の第１主面９１に実装されている。第２電子部品２は、第１電子部品１上に配置されている。実装基板９の第１主面９１は、凹部９１１を有する。第１電子部品１は、実装基板９の第１主面９１において凹部９１１に実装されている。これにより、実施形態４に係る高周波モジュール１００ｃは、低背化を図ることが可能となる。より詳細には、実施形態４に係る高周波モジュール１００ｃは、第１電子部品１と第１電子部品１上に配置された第２電子部品２とを備える構成において、実装基板９の厚さ方向Ｄ１における高周波モジュール１００ｃの低背化を図ることが可能となる。 The high frequency module 100c according to the fourth embodiment includes a mounting board 9, a first electronic component 1, and a second electronic component 2. The mounting board 9 has a first main surface 91 and a second main surface 92 facing each other. The first electronic component 1 is mounted on the first main surface 91 of the mounting board 9. The second electronic component 2 is arranged on the first electronic component 1. The first main surface 91 of the mounting board 9 has a recess 911. The first electronic component 1 is mounted in the recess 911 on the first main surface 91 of the mounting board 9. This makes it possible to reduce the height of the high frequency module 100c according to the fourth embodiment. More specifically, the high frequency module 100c according to the fourth embodiment has a configuration including the first electronic component 1 and the second electronic component 2 arranged on the first electronic component 1, and the thickness direction D1 of the mounting substrate 9 is provided. It is possible to reduce the height of the high frequency module 100c in the above.
　また、高周波モジュール１００ｃでは、実装基板９の厚さ方向Ｄ１からの平面視で、第１電子部品１（受信フィルタ１７３）と凹部９１１と第５電子部品２０５に含まれるローノイズアンプ１２１とが重なる。これにより、高周波モジュール１００ｃは、受信フィルタ１７３とローノイズアンプ１２１との間の配線の長さを短くすることが可能となる。これにより、高周波モジュール１００ｃは、受信フィルタ１７３とローノイズアンプ１２１との間の配線による浮遊容量を低減でき、受信フィルタ１７３のフィルタ特性とローノイズアンプ１２１のＮＦ（Noise Figure）との少なくとも一方を向上させることが可能となる。また、高周波モジュール１００ｃでは、実装基板９の厚さ方向Ｄ１からの平面視で、第３電子部品３（受信フィルタ１７１）と第２凹部９１２と第５電子部品２０５に含まれるローノイズアンプ１２１とが重なる。これにより、高周波モジュール１００ｃは、受信フィルタ１７１とローノイズアンプ１２１との間の配線の長さを短くすることが可能となる。これにより、高周波モジュール１００ｃは、受信フィルタ１７１とローノイズアンプ１２１との間の配線による浮遊容量を低減でき、受信フィルタ１７１のフィルタ特性とローノイズアンプ１２１のＮＦとの少なくとも一方を向上させることが可能となる。 Further, in the high frequency module 100c, the first electronic component 1 (reception filter 173), the recess 911, and the low noise amplifier 121 included in the fifth electronic component 205 overlap in a plan view from the thickness direction D1 of the mounting substrate 9. As a result, the high frequency module 100c can shorten the length of the wiring between the reception filter 173 and the low noise amplifier 121. As a result, the high frequency module 100c can reduce the stray capacitance due to the wiring between the reception filter 173 and the low noise amplifier 121, and improve at least one of the filter characteristics of the reception filter 173 and the NF (Noise Figure) of the low noise amplifier 121. It becomes possible. Further, in the high frequency module 100c, the third electronic component 3 (reception filter 171), the second recess 912, and the low noise amplifier 121 included in the fifth electronic component 205 are arranged in a plan view from the thickness direction D1 of the mounting substrate 9. Overlap. As a result, the high frequency module 100c can shorten the length of the wiring between the reception filter 171 and the low noise amplifier 121. As a result, the high frequency module 100c can reduce the stray capacitance due to the wiring between the reception filter 171 and the low noise amplifier 121, and can improve at least one of the filter characteristics of the reception filter 171 and the NF of the low noise amplifier 121. Become.
　（実施形態５）
　実施形態５に係る高周波モジュール１００ｄについて、図７を参照して説明する。実施形態５に係る高周波モジュール１００ｄに関し、実施形態４に係る高周波モジュール１００ｃと同様の構成要素については、同一の符号を付して説明を省略する。 (Embodiment 5)
The high frequency module 100d according to the fifth embodiment will be described with reference to FIG. 7. Regarding the high frequency module 100d according to the fifth embodiment, the same components as the high frequency module 100c according to the fourth embodiment are designated by the same reference numerals and the description thereof will be omitted.
　実施形態５に係る高周波モジュール１００ｄは、複数の外部接続端子８がボールバンプである点で、実施形態４に係る高周波モジュール１００ｃと相違する。また、実施形態５に係る高周波モジュール１００ｄは、実施形態４に係る高周波モジュール１００ｃの第２樹脂層２０６を備えていない点で、実施形態４に係る高周波モジュール１００ｃと相違する。実施形態５に係る高周波モジュール１００ｄは、実装基板９の第２主面９２に実装されている第５電子部品２０５と実装基板９の第２主面９２との間の隙間に設けられたアンダーフィル部を備えていてもよい。 The high frequency module 100d according to the fifth embodiment is different from the high frequency module 100c according to the fourth embodiment in that a plurality of external connection terminals 8 are ball bumps. Further, the high frequency module 100d according to the fifth embodiment is different from the high frequency module 100c according to the fourth embodiment in that the second resin layer 206 of the high frequency module 100c according to the fourth embodiment is not provided. The high frequency module 100d according to the fifth embodiment is provided with an underfill provided in a gap between the fifth electronic component 205 mounted on the second main surface 92 of the mounting board 9 and the second main surface 92 of the mounting board 9. It may be provided with a part.
　複数の外部接続端子８の各々を構成するボールバンプの材料は、例えば、金、銅、はんだ等である。 The material of the ball bumps constituting each of the plurality of external connection terminals 8 is, for example, gold, copper, solder, or the like.
　複数の外部接続端子８は、ボールバンプにより構成された外部接続端子８と、柱状電極により構成された外部接続端子８と、が混在してもよい。 The plurality of external connection terminals 8 may be a mixture of an external connection terminal 8 composed of ball bumps and an external connection terminal 8 composed of columnar electrodes.
　実施形態５に係る高周波モジュール１００ｄは、実施形態４に係る高周波モジュール１００ｃと同様、第１電子部品１が実装基板９の第１主面９１において凹部９１１に実装されている。これにより、実施形態５に係る高周波モジュール１００ｄは、第１電子部品１と第１電子部品１上に配置された第２電子部品２とを備える構成において、実装基板９の厚さ方向Ｄ１における高周波モジュール１００ｄの低背化を図ることが可能となる。 In the high frequency module 100d according to the fifth embodiment, the first electronic component 1 is mounted in the recess 911 on the first main surface 91 of the mounting board 9, similarly to the high frequency module 100c according to the fourth embodiment. As a result, the high frequency module 100d according to the fifth embodiment has a configuration including the first electronic component 1 and the second electronic component 2 arranged on the first electronic component 1, and has a high frequency in the thickness direction D1 of the mounting substrate 9. It is possible to reduce the height of the module 100d.
　（実施形態６）
　実施形態６に係る高周波モジュール１００ｅについて、図８を参照して説明する。実施形態６に係る高周波モジュール１００ｅに関し、実施形態４に係る高周波モジュール１００ｃと同様の構成要素については、同一の符号を付して説明を省略する。 (Embodiment 6)
The high frequency module 100e according to the sixth embodiment will be described with reference to FIG. Regarding the high frequency module 100e according to the sixth embodiment, the same components as the high frequency module 100c according to the fourth embodiment are designated by the same reference numerals and the description thereof will be omitted.
　高周波モジュール１００ｅは、実施形態４に係る高周波モジュール１００ｃと比べて、第１凹部９１１の深さが深い。高周波モジュール１００ｅでは、実施形態４に係る高周波モジュール１００ｃと比べて、第２凹部９１２の深さが深い。高周波モジュール１００ｅでは、第１凹部９１１の深さは、第１電子部品１の複数の外部電極１５の厚さよりも大きい。第１凹部９１１の深さは、実装基板９の最大厚さの半分であるが、これに限らない。また、高周波モジュール１００ｅでは、第２凹部９１２の深さは、第３電子部品３の複数の外部電極３５の厚さよりも大きい。第２凹部９１２の深さは、実装基板９の最大厚さの半分であるが、これに限らない。 The high frequency module 100e has a deeper first recess 911 than the high frequency module 100c according to the fourth embodiment. In the high frequency module 100e, the depth of the second recess 912 is deeper than that of the high frequency module 100c according to the fourth embodiment. In the high frequency module 100e, the depth of the first recess 911 is larger than the thickness of the plurality of external electrodes 15 of the first electronic component 1. The depth of the first recess 911 is half the maximum thickness of the mounting substrate 9, but is not limited to this. Further, in the high frequency module 100e, the depth of the second recess 912 is larger than the thickness of the plurality of external electrodes 35 of the third electronic component 3. The depth of the second recess 912 is half the maximum thickness of the mounting substrate 9, but is not limited to this.
　実施形態６に係る高周波モジュール１００ｅは、実施形態４に係る高周波モジュール１００ｃよりも低背化を図ることが可能となる。 The high frequency module 100e according to the sixth embodiment can be made lower than the high frequency module 100c according to the fourth embodiment.
　（実施形態７）
　実施形態７に係る高周波モジュール１００ｆについて、図９を参照して説明する。実施形態７に係る高周波モジュール１００ｆに関し、実施形態１に係る高周波モジュール１００と同様の構成要素については、同一の符号を付して説明を省略する。 (Embodiment 7)
The high frequency module 100f according to the seventh embodiment will be described with reference to FIG. Regarding the high frequency module 100f according to the seventh embodiment, the same components as the high frequency module 100 according to the first embodiment are designated by the same reference numerals and the description thereof will be omitted.
　高周波モジュール１００ｆは、第１電子部品１がローノイズアンプ１２１により構成され、第２電子部品２が第３スイッチ１０６により構成されている点で、実施形態１に係る高周波モジュール１００と相違する。 The high frequency module 100f is different from the high frequency module 100 according to the first embodiment in that the first electronic component 1 is configured by the low noise amplifier 121 and the second electronic component 2 is configured by the third switch 106.
　実施形態７に係る高周波モジュール１００ｆは、実施形態１に係る高周波モジュール１００と同様、第１電子部品１が実装基板９の第１主面９１における凹部９１１に実装されているので、低背化を図ることが可能となる。 Similar to the high frequency module 100 according to the first embodiment, the high frequency module 100f according to the seventh embodiment has the first electronic component 1 mounted in the recess 911 on the first main surface 91 of the mounting substrate 9, so that the height can be reduced. It is possible to plan.
　また、高周波モジュール１００ｆは、第１電子部品１がローノイズアンプ１２１であり、第２電子部品２が第３スイッチ１０６であるので、ローノイズアンプ１２１の入力端子側の配線による浮遊容量を低減でき、ローノイズアンプ１２１のＮＦを向上させることが可能となる。高周波モジュール１００ｆでは、第２電子部品２が、第３スイッチ１０６と、入力整合回路１２３を構成するＩＰＤと、を含むＩＣチップであってもよい。 Further, in the high frequency module 100f, since the first electronic component 1 is the low noise amplifier 121 and the second electronic component 2 is the third switch 106, the stray capacitance due to the wiring on the input terminal side of the low noise amplifier 121 can be reduced, and the low noise can be reduced. It is possible to improve the NF of the amplifier 121. In the high frequency module 100f, the second electronic component 2 may be an IC chip including the third switch 106 and the IPD constituting the input matching circuit 123.
　（変形例）
　上記の実施形態１～７等は、本発明の様々な実施形態の一つに過ぎない。上記の実施形態１～７等は、本発明の目的を達成できれば、設計等に応じて種々の変更が可能であり、互いに異なる実施形態の互いに異なる構成要素を適宜組み合わせてもよい。 (Modification example)
The above embodiments 1 to 7 and the like are only one of various embodiments of the present invention. The above embodiments 1 to 7 and the like can be variously modified according to the design and the like as long as the object of the present invention can be achieved, and different components of different embodiments may be appropriately combined.
　高周波モジュール１００、１００ａ、１００ｂ、１００ｃ、１００ｄ、１００ｅ、１００ｆでは、樹脂層５は、第１電子部品１の外周面１３の全部を覆っている場合だけに限らず、外周面１３の少なくとも一部を覆っていればよい。また、樹脂層５は、第２電子部品２の外周面２３の全部を覆っている場合だけに限らず、外周面２３の少なくとも一部を覆っていればよい。また、樹脂層５は、第３電子部品３の外周面３３の全部を覆っている場合だけに限らず、外周面３３の少なくとも一部を覆っていればよい。また、樹脂層５は、第４電子部品４の外周面４３の全部を覆っている場合だけに限らず、外周面４３の少なくとも一部を覆っていればよい。 In the high frequency modules 100, 100a, 100b, 100c, 100d, 100e, 100f, the resin layer 5 is not limited to the case where the entire outer peripheral surface 13 of the first electronic component 1 is covered, but at least a part of the outer peripheral surface 13. It suffices to cover. Further, the resin layer 5 is not limited to the case where the entire outer peripheral surface 23 of the second electronic component 2 is covered, and may cover at least a part of the outer peripheral surface 23. Further, the resin layer 5 is not limited to the case where the entire outer peripheral surface 33 of the third electronic component 3 is covered, and may cover at least a part of the outer peripheral surface 33. Further, the resin layer 5 is not limited to the case where the entire outer peripheral surface 43 of the fourth electronic component 4 is covered, and may cover at least a part of the outer peripheral surface 43.
　また、高周波モジュール１００、１００ａ、１００ｂ、１００ｃ、１００ｄ、１００ｅ、１００ｆでは、シールド層６は、樹脂層５の主面５１の全部を覆っている場合だけに限らず、樹脂層５の主面５１の少なくとも一部を覆っていればよい。また、高周波モジュール１００、１００ｃ、１００ｄ、１００ｅ、１００ｆでは、シールド層６は、第２電子部品２の主面２１の全部を覆っている場合だけに限らず、第２電子部品２の主面２１の少なくとも一部を覆っていればよい。また、高周波モジュール１００、１００ａ、１００ｂ、１００ｃ、１００ｄ、１００ｅ、１００ｆでは、シールド層６は、第４電子部品４の主面４１の全部を覆っている場合だけに限らず、第４電子部品４の主面４１の少なくとも一部を覆っていればよい。 Further, in the high frequency modules 100, 100a, 100b, 100c, 100d, 100e, 100f, the shield layer 6 is not limited to the case where the entire main surface 51 of the resin layer 5 is covered, but the main surface 51 of the resin layer 5 is covered. It suffices to cover at least a part of. Further, in the high frequency modules 100, 100c, 100d, 100e, and 100f, the shield layer 6 is not limited to the case where the entire main surface 21 of the second electronic component 2 is covered, but the main surface 21 of the second electronic component 2 is covered. It suffices to cover at least a part of. Further, in the high frequency modules 100, 100a, 100b, 100c, 100d, 100e, 100f, the shield layer 6 is not limited to the case where the shield layer 6 covers the entire main surface 41 of the fourth electronic component 4, and the fourth electronic component 4 is not limited to the case where the shield layer 6 covers the entire main surface 41 of the fourth electronic component 4. It suffices to cover at least a part of the main surface 41 of the above.
　また、複数の送信フィルタ１３１、１３２、１３３及び複数の受信フィルタ１７１、１７２、１７３の各々は、表面弾性波フィルタに限らず、例えば、ＢＡＷ（Bulk Acoustic Wave）フィルタであってもよい。ＢＡＷフィルタにおける共振子は、例えば、ＦＢＡＲ（Film Bulk Acoustic Resonator）又はＳＭＲ（Solidly Mounted Resonator）である。 Further, each of the plurality of transmission filters 131, 132, 133 and the plurality of reception filters 171, 172, 173 is not limited to the surface acoustic wave filter, and may be, for example, a BAW (Bulk Acoustic Wave) filter. The resonator in the BAW filter is, for example, FBAR (Film Bulk Acoustic Resonator) or SMR (Solidly Mounted Resonator).
　また、複数の送信フィルタ１３１、１３２、１３３及び複数の受信フィルタ１７１、１７２、１７３の各々は、ラダー型フィルタに限らず、例えば、縦結合共振子型弾性表面波フィルタでもよい。 Further, each of the plurality of transmission filters 131, 132, 133 and the plurality of reception filters 171, 172, 173 is not limited to the ladder type filter, and may be, for example, a longitudinally coupled resonator type elastic surface wave filter.
　また、上述の弾性波フィルタは、表面弾性波又はバルク弾性波を利用する弾性波フィルタであるが、これに限らず、例えば、弾性境界波、板波等を利用する弾性波フィルタであってもよい。 Further, the above-mentioned elastic wave filter is an elastic wave filter that utilizes a surface acoustic wave or a bulk elastic wave, but is not limited to this, and may be, for example, an elastic wave filter that utilizes an elastic boundary wave, a plate wave, or the like. good.
　また、第２電子部品２が送信系回路部品の場合、送信系回路部品は、送信フィルタ１３３に限らず、例えば、送信フィルタ１３１、送信フィルタ１３２、第１パワーアンプ１１１、第２パワーアンプ１１２又は第２スイッチ１０５であってもよい。 When the second electronic component 2 is a transmission circuit component, the transmission circuit component is not limited to the transmission filter 133, and is, for example, a transmission filter 131, a transmission filter 132, a first power amplifier 111, a second power amplifier 112, or the like. It may be the second switch 105.
　また、高周波モジュール１００、１００ｃ、１００ｄ、１００ｅでは、第１電子部品１は、第２電子部品２を構成する送信フィルタ１３３の通過帯域を送信帯域として含む通信バンドとは異なる通信バンドの受信帯域を通過帯域とする受信フィルタであってもよい。この場合、第１電子部品１と第２電子部品２とで互いの通信バンドが異なるので、第１電子部品１と第２電子部品２との間のアイソレーションの向上を図れる。また、高周波モジュール１００、１００ｃ、１００ｄ、１００ｅでは、第３電子部品３は、第４電子部品４を構成する送信フィルタ１３１の通過帯域を送信帯域として含む通信バンドとは異なる通信バンドの受信帯域を通過帯域とする受信フィルタであってもよい。この場合、第３電子部品３と第４電子部品４とで互いの通信バンドが異なるので、第３電子部品３と第４電子部品４との間のアイソレーションの向上を図れる。 Further, in the high frequency modules 100, 100c, 100d, 100e, the first electronic component 1 has a reception band of a communication band different from the communication band including the pass band of the transmission filter 133 constituting the second electronic component 2 as the transmission band. It may be a reception filter as a pass band. In this case, since the communication bands of the first electronic component 1 and the second electronic component 2 are different from each other, the isolation between the first electronic component 1 and the second electronic component 2 can be improved. Further, in the high frequency modules 100, 100c, 100d, 100e, the third electronic component 3 has a reception band of a communication band different from the communication band including the pass band of the transmission filter 131 constituting the fourth electronic component 4 as the transmission band. It may be a reception filter as a pass band. In this case, since the communication bands of the third electronic component 3 and the fourth electronic component 4 are different from each other, the isolation between the third electronic component 3 and the fourth electronic component 4 can be improved.
　また、スタック構造体１０は、複数の電子部品７がスタックされていればよく、２つの電子部品７がスタックされた構成に限らず、３つ以上の電子部品７がスタックされた構成であってもよい。また、第１電子部品１及び第２電子部品２の各々は、デュプレクサであってもよい。 Further, the stack structure 10 does not have to be a configuration in which a plurality of electronic components 7 are stacked, and is not limited to a configuration in which two electronic components 7 are stacked, but a configuration in which three or more electronic components 7 are stacked. May be good. Further, each of the first electronic component 1 and the second electronic component 2 may be a duplexer.
　また、高周波モジュール１００ｄでは、凹部９１１の深さが複数の外部電極１５の厚さよりも小さい場合、実装基板９の厚さ方向Ｄ１からの平面視で、第１電子部品１の全部が凹部９１１の一部に重なる構成に限らない。例えば、実装基板９の厚さ方向Ｄ１からの平面視で、第１電子部品１の全部が凹部９１１の全部に重なる構成であってもよいし、第１電子部品１の一部が凹部９１１の全部に重なる構成であってもよい。 Further, in the high frequency module 100d, when the depth of the recess 911 is smaller than the thickness of the plurality of external electrodes 15, all of the first electronic components 1 are recessed 911 in a plan view from the thickness direction D1 of the mounting substrate 9. It is not limited to a configuration that overlaps a part. For example, in a plan view from the thickness direction D1 of the mounting substrate 9, the entire first electronic component 1 may be configured to overlap the entire recess 911, or a part of the first electronic component 1 may be formed in the recess 911. It may be a configuration that overlaps all.
　高周波モジュール１００～１００ｆの回路構成は、上述の図３の例に限らない。また、高周波モジュール１００～１００ｆは、回路構成として、例えば、ＭＩＭＯ（Multi Input Multi Output）対応の高周波フロントエンド回路を有していてもよい。 The circuit configuration of the high frequency modules 100 to 100f is not limited to the example of FIG. 3 described above. Further, the high frequency modules 100 to 100f may have, for example, a high frequency front end circuit corresponding to MIMO (Multi Input Multi Output) as a circuit configuration.
　また、実施形態１に係る通信装置３００は、高周波モジュール１００の代わりに、高周波モジュール１００ａ、１００ｂ、１００ｃ、１００ｄ、１００ｅ、１００ｆのいずれかを備えてもよい。 Further, the communication device 300 according to the first embodiment may include any one of the high frequency modules 100a, 100b, 100c, 100d, 100e, and 100f instead of the high frequency module 100.
　（態様）
　本明細書には、以下の態様が開示されている。 (Aspect)
The following aspects are disclosed herein.
　第１の態様に係る高周波モジュール（１００；１００ａ；１００ｂ；１００ｃ；１００ｄ；１００ｅ；１００ｆ）は、実装基板（９）と、第１電子部品（１）と、第２電子部品（２）と、を備える。実装基板（９）は、互いに対向する第１主面（９１）及び第２主面（９２）を有する。第１電子部品（１）は、実装基板（９）の第１主面（９１）に実装されている。第２電子部品（２）は、第１電子部品（１）上に配置されている。実装基板（９）の第１主面（９１）は、凹部（９１１）を有する。第１電子部品（１）は、実装基板（９）の第１主面（９１）において凹部（９１１）に実装されている。 The high frequency module (100; 100a; 100b; 100c; 100d; 100e; 100f) according to the first aspect includes a mounting substrate (9), a first electronic component (1), a second electronic component (2), and the like. To prepare for. The mounting board (9) has a first main surface (91) and a second main surface (92) facing each other. The first electronic component (1) is mounted on the first main surface (91) of the mounting board (9). The second electronic component (2) is arranged on the first electronic component (1). The first main surface (91) of the mounting substrate (9) has a recess (911). The first electronic component (1) is mounted in the recess (911) on the first main surface (91) of the mounting board (9).
　第１の態様に係る高周波モジュール（１００；１００ａ；１００ｂ；１００ｃ；１００ｄ；１００ｅ；１００ｆ）は、低背化を図ることが可能となる。 The high frequency module (100; 100a; 100b; 100c; 100d; 100e; 100f) according to the first aspect can reduce the height.
　第２の態様に係る高周波モジュール（１００；１００ｃ；１００ｄ；１００ｅ；１００ｆ）は、第１の態様において、樹脂層（５）と、シールド層（６）と、を更に備える。樹脂層（５）は、実装基板（９）の第１主面（９１）に配置されている。樹脂層（５）は、第１電子部品（１）の外周面（１３）及び第２電子部品（２）の外周面（２３）の少なくとも一部を覆っている。シールド層（６）は、樹脂層（５）における実装基板（９）側とは反対側の主面（５１）の少なくとも一部と、第１電子部品（１）と第２電子部品（２）とを含む複数の電子部品（７）を有するスタック構造体（１０）の一部と、を覆っている。スタック構造体（１０）における複数の電子部品（７）のうち実装基板（９）から最も遠い電子部品（７）における実装基板（９）側とは反対側の主面（７１）は、シールド層（６）に接している。 The high frequency module (100; 100c; 100d; 100e; 100f) according to the second aspect further includes a resin layer (5) and a shield layer (6) in the first aspect. The resin layer (5) is arranged on the first main surface (91) of the mounting substrate (9). The resin layer (5) covers at least a part of the outer peripheral surface (13) of the first electronic component (1) and the outer peripheral surface (23) of the second electronic component (2). The shield layer (6) includes at least a part of the main surface (51) of the resin layer (5) opposite to the mounting substrate (9) side, and the first electronic component (1) and the second electronic component (2). It covers a part of a stack structure (10) having a plurality of electronic components (7) including and. Of the plurality of electronic components (7) in the stack structure (10), the main surface (71) of the electronic component (7) farthest from the mounting board (9) opposite to the mounting board (9) side is a shield layer. It is in contact with (6).
　第２の態様に係る高周波モジュール（１００；１００ｃ；１００ｄ；１００ｅ；１００ｆ）は、スタック構造体（１０）における複数の電子部品（７）のうち実装基板（９）から最も遠い電子部品（７）で発生する熱を、シールド層（６）を通して放熱させやすくできる。 The high frequency module (100; 100c; 100d; 100e; 100f) according to the second aspect is the electronic component (7) farthest from the mounting substrate (9) among the plurality of electronic components (7) in the stack structure (10). The heat generated in the above can be easily dissipated through the shield layer (6).
　第３の態様に係る高周波モジュール（１００；１００ｃ；１００ｄ；１００ｅ）では、第２の態様において、複数の電子部品（７）のうち実装基板（９）から最も遠い電子部品（７）は、送信系回路部品である。 In the high frequency module (100; 100c; 100d; 100e) according to the third aspect, in the second aspect, the electronic component (7) farthest from the mounting board (9) among the plurality of electronic components (7) is transmitted. It is a system circuit component.
　第３の態様に係る高周波モジュール（１００；１００ｃ；１００ｄ；１００ｅ）では、送信系回路部品の温度上昇を抑制することが可能となる。 In the high frequency module (100; 100c; 100d; 100e) according to the third aspect, it is possible to suppress the temperature rise of the transmission system circuit component.
　第４の態様に係る高周波モジュール（１００；１００ｃ；１００ｄ；１００ｅ）では、第３の態様において、複数の電子部品（７）のうち実装基板（９）から最も遠い電子部品（７）は、第２電子部品（２）である。第１電子部品（１）は、受信フィルタ（１７３）である。第２電子部品（２）は、送信フィルタ（１３３）である。 In the high frequency module (100; 100c; 100d; 100e) according to the fourth aspect, in the third aspect, the electronic component (7) farthest from the mounting substrate (9) among the plurality of electronic components (7) is the first. 2 Electronic component (2). The first electronic component (1) is a reception filter (173). The second electronic component (2) is a transmission filter (133).
　第４の態様に係る高周波モジュール（１００；１００ｃ；１００ｄ；１００ｅ）は、送信フィルタ（１３３）と受信フィルタ（１７３）との間の配線の長さを短くすることが可能となる。これにより、高周波モジュール（１００；１００ｃ；１００ｄ；１００ｅ）は、送信フィルタ（１３３）と受信フィルタ（１７３）との間の配線による浮遊容量を低減でき、送信フィルタ（１３３）のフィルタ特性及び受信フィルタ（１７３）のフィルタ特性を向上させることが可能となる。 The high frequency module (100; 100c; 100d; 100e) according to the fourth aspect can shorten the length of the wiring between the transmission filter (133) and the reception filter (173). As a result, the high frequency module (100; 100c; 100d; 100e) can reduce the stray capacitance due to the wiring between the transmission filter (133) and the reception filter (173), and the filter characteristics of the transmission filter (133) and the reception filter. It is possible to improve the filter characteristics of (173).
　第５の態様に係る高周波モジュール（１００；１００ｃ；１００ｄ；１００ｅ）では、第１～４の態様のいずれか一つにおいて、第１電子部品（１）は、所定の通信バンド（第３通信バンド）の受信帯域を通過帯域とする受信フィルタ（１７３）である。第２電子部品（２）は、上記所定の通信バンドの送信帯域を通過帯域とする送信フィルタ（１３３）である。 In the high frequency module (100; 100c; 100d; 100e) according to the fifth aspect, in any one of the first to fourth aspects, the first electronic component (1) is a predetermined communication band (third communication band). ) Is a reception filter (173) having a pass band as a pass band. The second electronic component (2) is a transmission filter (133) whose pass band is the transmission band of the predetermined communication band.
　第５の態様に係る高周波モジュール（１００；１００ｃ；１００ｄ；１００ｅ）は、送信フィルタ（１３３）と受信フィルタ（１７３）との間の配線の長さを短くすることが可能となる。これにより、高周波モジュール（１００；１００ｃ；１００ｄ；１００ｅ）は、送信フィルタ（１３３）と受信フィルタ（１７３）との間の配線による浮遊容量を低減でき、例えば、送信フィルタ（１３１）と送信フィルタ（１３２）とを利用するＦＤＤ（Frequency Division Duplex）通信を行う際に、送信フィルタ（１３３）及び受信フィルタ（１７３）それぞれのフィルタ特性を向上させることが可能となる。 The high frequency module (100; 100c; 100d; 100e) according to the fifth aspect can shorten the length of the wiring between the transmission filter (133) and the reception filter (173). Thereby, the high frequency module (100; 100c; 100d; 100e) can reduce the stray capacitance due to the wiring between the transmission filter (133) and the reception filter (173), for example, the transmission filter (131) and the transmission filter (131). When performing FDD (Frequency Division Duplex) communication using 132), it is possible to improve the filter characteristics of each of the transmission filter (133) and the reception filter (173).
　第６の態様に係る高周波モジュール（１００；１００ｃ；１００ｄ；１００ｅ）では、第４又は５の態様において、受信フィルタ（１７３）及び送信フィルタ（１３３）の各々は、弾性波フィルタである。 In the high frequency module (100; 100c; 100d; 100e) according to the sixth aspect, in the fourth or fifth aspect, each of the receiving filter (173) and the transmitting filter (133) is an elastic wave filter.
　第７の態様に係る高周波モジュール（１００ａ）では、第１～３の態様のいずれか一つにおいて、第１電子部品（１）は、ＩＣチップ（１０８）である。第２電子部品（２）は、送信フィルタ（１３３）である。 In the high frequency module (100a) according to the seventh aspect, in any one of the first to third aspects, the first electronic component (1) is an IC chip (108). The second electronic component (2) is a transmission filter (133).
　第８の態様に係る高周波モジュール（１００ａ）では、第７の態様において、ＩＣチップ（１０８）は、ＩＰＤを含む。 In the high frequency module (100a) according to the eighth aspect, in the seventh aspect, the IC chip (108) includes the IPD.
　第９の態様に係る高周波モジュール（１００ａ）は、第７又は８の態様において、第２電子部品（２）を複数備える。複数の第２電子部品（２）は、１つの第１電子部品（１）上に配置されている。 The high frequency module (100a) according to the ninth aspect includes a plurality of second electronic components (2) in the seventh or eighth aspect. A plurality of second electronic components (2) are arranged on one first electronic component (1).
　第９の態様に係る高周波モジュール（１００ａ）は、実装基板（９）の厚さ方向（Ｄ１）からの平面視での高周波モジュール（１００ａ）の外形サイズの小型化を図ることが可能となる。 The high frequency module (100a) according to the ninth aspect can reduce the external size of the high frequency module (100a) in a plan view from the thickness direction (D1) of the mounting substrate (9).
　第１０の態様に係る高周波モジュール（１００ａ）は、第１の態様において、樹脂層（５）と、シールド層（６）と、第１ワイヤ（Ｗ２１）と、第２ワイヤ（Ｗ２２）と、を更に備える。樹脂層（５）は、実装基板（９）の第１主面（９１）に配置されている。樹脂層（５）は、第１電子部品（１）の外周面（１３）及び第２電子部品（２）の外周面（２３）の少なくとも一部を覆っている。シールド層（６）は、樹脂層（５）における実装基板（９）側とは反対側の主面（５１）の少なくとも一部を覆っている。第１ワイヤ（Ｗ２１）は、線状である。第１ワイヤ（Ｗ２１）は、第２電子部品（２）の有するグランド電極（２６）とシールド層（６）とを接続している。第２ワイヤ（Ｗ２２）は、線状である。第２ワイヤ（Ｗ２２）は、シールド層（６）と実装基板（９）とを接続している。 In the first aspect, the high frequency module (100a) according to the tenth aspect comprises a resin layer (5), a shield layer (6), a first wire (W21), and a second wire (W22). Further prepare. The resin layer (5) is arranged on the first main surface (91) of the mounting substrate (9). The resin layer (5) covers at least a part of the outer peripheral surface (13) of the first electronic component (1) and the outer peripheral surface (23) of the second electronic component (2). The shield layer (6) covers at least a part of the main surface (51) of the resin layer (5) opposite to the mounting substrate (9) side. The first wire (W21) is linear. The first wire (W21) connects the ground electrode (26) of the second electronic component (2) and the shield layer (6). The second wire (W22) is linear. The second wire (W22) connects the shield layer (6) and the mounting board (9).
　第１０の態様に係る高周波モジュール（１００ａ）は、第２電子部品（２）のグランド電極（２６）を、第１電子部品（１）を介さずに実装基板（９）に接続でき、グランド電極（２６）をシールド層（６）にも接続することができる。 In the high frequency module (100a) according to the tenth aspect, the ground electrode (26) of the second electronic component (2) can be connected to the mounting substrate (9) without going through the first electronic component (1), and the ground electrode can be connected. (26) can also be connected to the shield layer (6).
　第１１の態様に係る高周波モジュール（１００；１００ｃ；１００ｄ；１００ｅ）は、第２又は３の態様において、第１パワーアンプ（１１１）と、第２パワーアンプ（１１２）と、を更に備える。第１パワーアンプ（１１１）は、第１パワークラスに対応する。第２パワーアンプ（１１２）は、第２パワークラスに対応する。第２パワークラスの最大出力パワーは、第１パワークラスの最大出力パワーよりも大きい。第２電子部品（２）は、第２パワーアンプ（１１２）に接続されている送信フィルタ（１３３）である。 The high frequency module (100; 100c; 100d; 100e) according to the eleventh aspect further includes a first power amplifier (111) and a second power amplifier (112) in the second or third aspect. The first power amplifier (111) corresponds to the first power class. The second power amplifier (112) corresponds to the second power class. The maximum output power of the second power class is larger than the maximum output power of the first power class. The second electronic component (2) is a transmission filter (133) connected to the second power amplifier (112).
　第１１の態様に係る高周波モジュール（１００；１００ｃ；１００ｄ；１００ｅ）は、第１パワーアンプ（１１１）と第２パワーアンプ（１１２）とのうち最大出力パワーが大きい第２パワーアンプ（１１２）に接続されている送信フィルタ（１３３）の温度上昇を抑制することができる。 The high frequency module (100; 100c; 100d; 100e) according to the eleventh aspect is a second power amplifier (112) having a larger maximum output power among the first power amplifier (111) and the second power amplifier (112). It is possible to suppress the temperature rise of the connected transmission filter (133).
　第１２の態様に係る高周波モジュール（１００ｂ）では、第１の態様において、第１電子部品（１）は、パワーアンプ（１１１；１１２）である。第２電子部品（２）は、パワーアンプ（１１１；１１２）を制御するコントローラ（１１５）である。 In the high frequency module (100b) according to the twelfth aspect, in the first aspect, the first electronic component (1) is a power amplifier (111; 112). The second electronic component (2) is a controller (115) that controls a power amplifier (111; 112).
　第１２の態様に係る高周波モジュール（１００ｂ）は、パワーアンプ（１１１；１１２）とコントローラ（１１５）との間の配線長を短くすることが可能となり、また、パワーアンプ（１１１；１１２）の熱を、実装基板（９）を通して放熱させやすくすることが可能となる。 The high frequency module (100b) according to the twelfth aspect can shorten the wiring length between the power amplifier (111; 112) and the controller (115), and the heat of the power amplifier (111; 112). Can be easily dissipated through the mounting board (9).
　第１３の態様に係る高周波モジュール（１００ｆ）は、第１の態様において、複数の受信フィルタ（１７１、１７２、１７３）を更に備える。複数の受信フィルタ（１７１、１７２、１７３）は、互に異なる通信バンドの受信帯域を通過帯域とする。第１電子部品（１）は、ローノイズアンプ（１２１）である。第２電子部品（２）は、スイッチ（第３スイッチ１０６）である。スイッチ（第３スイッチ１０６）は、複数の受信フィルタ（１７１、１７２、１７３）に接続されている複数の選択端子（１６１、１６２、１６３）と、ローノイズアンプ（１２１）に接続されており複数の選択端子（１６１、１６２、１６３）に接続可能な共通端子（１６０）と、を有する。 The high frequency module (100f) according to the thirteenth aspect further includes a plurality of reception filters (171, 172, 173) in the first aspect. The plurality of reception filters (171, 172, 173) set the reception band of the communication band different from each other as the pass band. The first electronic component (1) is a low noise amplifier (121). The second electronic component (2) is a switch (third switch 106). The switch (third switch 106) is connected to a plurality of selection terminals (161, 162, 163) connected to a plurality of reception filters (171, 172, 173) and a plurality of low noise amplifiers (121). It has a common terminal (160) that can be connected to a selection terminal (161, 162, 163).
　第１３の態様に係る高周波モジュール（１００ｆ）は、ローノイズアンプ（１２１）の入力端子側の配線による浮遊容量を低減でき、ローノイズアンプ（１２１）のＮＦを向上させることが可能となる。 The high frequency module (100f) according to the thirteenth aspect can reduce the stray capacitance due to the wiring on the input terminal side of the low noise amplifier (121), and can improve the NF of the low noise amplifier (121).
　第１４の態様に係る高周波モジュール（１００；１００ａ；１００ｂ；１００ｃ；１００ｄ；１００ｅ；１００ｆ）では、第１～１３の態様のいずれか一つにおいて、実装基板（９）の厚さ方向（Ｄ１）からの平面視で、第１電子部品（１）の外形サイズが、凹部（９１１）のサイズよりも小さく、第１電子部品（１）の全部が凹部（９１１）の一部に重なる。 In the high frequency module (100; 100a; 100b; 100c; 100d; 100e; 100f) according to the fourteenth aspect, in any one of the first to thirteenth aspects, the thickness direction (D1) of the mounting substrate (9) The external size of the first electronic component (1) is smaller than the size of the recess (911), and the entire first electronic component (1) overlaps a part of the recess (911).
　第１４の態様に係る高周波モジュール（１００；１００ａ；１００ｂ；１００ｃ；１００ｄ；１００ｅ；１００ｆ）では、実装基板（９）における凹部（９１１）への第１電子部品（１）の実装が容易になり、信頼性の向上を図れる。 In the high frequency module (100; 100a; 100b; 100c; 100d; 100e; 100f) according to the fourteenth aspect, it becomes easy to mount the first electronic component (1) in the recess (911) in the mounting substrate (9). , The reliability can be improved.
　第１５の態様に係る高周波モジュール（１００；１００ａ；１００ｂ；１００ｃ；１００ｄ；１００ｅ；１００ｆ）では、第１～１４の態様のいずれか一つにおいて、第１電子部品（１）は、実装基板（９）の第１主面（９１）に接続されている複数の外部電極（１５）を有する。複数の外部電極（１５）が凹部（９１１）内に位置している。 In the high frequency module (100; 100a; 100b; 100c; 100d; 100e; 100f) according to the fifteenth aspect, in any one of the first to the fourteenth aspects, the first electronic component (1) is a mounting substrate (1). It has a plurality of external electrodes (15) connected to the first main surface (91) of 9). A plurality of external electrodes (15) are located in the recess (911).
　第１５の態様に係る高周波モジュール（１００；１００ａ；１００ｂ；１００ｃ；１００ｄ；１００ｅ；１００ｆ）は、実装基板（９）の厚さ方向（Ｄ１）からの平面視での第２電子部品（２）の外形サイズの自由度が高くなる。 The high frequency module (100; 100a; 100b; 100c; 100d; 100e; 100f) according to the fifteenth aspect is the second electronic component (2) in a plan view from the thickness direction (D1) of the mounting substrate (9). The degree of freedom in the external size of is increased.
　第１６の態様に係る高周波モジュール（１００；１００ａ；１００ｂ；１００ｃ；１００ｄ；１００ｅ；１００ｆ）は、第１～１５の態様のいずれか一つにおいて、実装基板（９）の第１主面（９１）に実装されている第３電子部品（３）と、第３電子部品（３）上に配置されている第４電子部品（４）と、を更に備える。実装基板（９）の第１主面（９１）は、凹部（９１１）である第１凹部（９１１）とは別に第２凹部（９１２）を更に有する。第３電子部品（３）は、実装基板（９）の第１主面（９１）において第２凹部（９１２）に実装されている。 The high frequency module (100; 100a; 100b; 100c; 100d; 100e; 100f) according to the sixteenth aspect is the first main surface (91) of the mounting substrate (9) in any one of the first to fifteenth aspects. ), And a fourth electronic component (4) arranged on the third electronic component (3). The first main surface (91) of the mounting substrate (9) further has a second recess (912) in addition to the first recess (911) which is a recess (911). The third electronic component (3) is mounted on the second recess (912) on the first main surface (91) of the mounting board (9).
　第１６の態様に係る高周波モジュール（１００；１００ａ；１００ｂ；１００ｃ；１００ｄ；１００ｅ；１００ｆ）は、実装基板（９）の厚さ方向（Ｄ１）からの平面視での実装基板（９）の外形サイズの更なる小型化を図ることが可能となる。 The high frequency module (100; 100a; 100b; 100c; 100d; 100e; 100f) according to the sixteenth aspect has an outer shape of the mounting substrate (9) in a plan view from the thickness direction (D1) of the mounting substrate (9). It is possible to further reduce the size.
　第１７の態様に係る高周波モジュール（１００；１００ａ；１００ｂ；１００ｃ；１００ｄ；１００ｅ；１００ｆ）は、第１～１６の態様のいずれか一つにおいて、複数の外部接続端子（８）を更に備える。 The high frequency module (100; 100a; 100b; 100c; 100d; 100e; 100f) according to the 17th aspect further includes a plurality of external connection terminals (8) in any one of the 1st to 16th aspects.
　第１８の態様に係る高周波モジュール（１００ｃ；１００ｄ；１００ｅ）は、第１７の態様において、第５電子部品（２０５）を更に備える。第５電子部品（２０５）は、実装基板（９）の第２主面（９２）に実装されている。 The high frequency module (100c; 100d; 100e) according to the eighteenth aspect further includes a fifth electronic component (205) in the seventeenth aspect. The fifth electronic component (205) is mounted on the second main surface (92) of the mounting board (9).
　第１８の態様に係る高周波モジュール（１００ｃ；１００ｄ；１００ｅ）は、実装基板（９）の厚さ方向（Ｄ１）からの平面視での実装基板（９）の外形サイズの更なる小型化を図ることが可能となる。 The high frequency module (100c; 100d; 100e) according to the eighteenth aspect aims to further reduce the external size of the mounting substrate (9) in a plan view from the thickness direction (D1) of the mounting substrate (9). It becomes possible.
　第１９の態様に係る高周波モジュール（１００；１００ａ；１００ｂ；１００ｃ；１００ｄ；１００ｅ；１００ｆ）では、第１～１８の態様のいずれか一つにおいて、実装基板（９）は、多層基板である。多層基板は、実装基板（９）の厚さ方向（Ｄ１）に積層されている複数の誘電体層（９７）を含む。凹部（９１１）は、実装基板（９）の厚さ方向（Ｄ１）において複数の誘電体層（９７）のうち少なくとも１層以上の誘電体層（９７）にわたって形成されている。 In the high frequency module (100; 100a; 100b; 100c; 100d; 100e; 100f) according to the 19th aspect, in any one of the 1st to 18th aspects, the mounting substrate (9) is a multilayer substrate. The multilayer board includes a plurality of dielectric layers (97) laminated in the thickness direction (D1) of the mounting board (9). The recess (911) is formed over at least one or more dielectric layers (97) among the plurality of dielectric layers (97) in the thickness direction (D1) of the mounting substrate (9).
　第１９の態様に係る高周波モジュール（１００；１００ａ；１００ｂ；１００ｃ；１００ｄ；１００ｅ；１００ｆ）は、実装基板（９）の凹部（９１１）の深さを、複数の誘電体層（９７）のうち凹部（９１１）を形成するための貫通孔を有する誘電体層（９７）の数によって決めることが可能となる。 In the high frequency module (100; 100a; 100b; 100c; 100d; 100e; 100f) according to the nineteenth aspect, the depth of the recess (911) of the mounting substrate (9) is set to the depth of the concave portion (911) of the plurality of dielectric layers (97). It can be determined by the number of dielectric layers (97) having through holes for forming the recesses (911).
　第２０の態様に係る通信装置（３００）は、第１～１９の態様のいずれか一つの高周波モジュール（１００；１００ａ；１００ｂ；１００ｃ；１００ｄ；１００ｅ；１００ｆ）と、信号処理回路（３０１）と、を備える。信号処理回路（３０１）は、高周波モジュール（１００；１００ａ；１００ｂ；１００ｃ；１００ｄ；１００ｅ；１００ｆ）に接続されている。 The communication device (300) according to the twentieth aspect includes a high frequency module (100; 100a; 100b; 100c; 100d; 100e; 100f) according to any one of the first to nineteenth aspects, and a signal processing circuit (301). , Equipped with. The signal processing circuit (301) is connected to a high frequency module (100; 100a; 100b; 100c; 100d; 100e; 100f).
　第２０の態様に係る通信装置（３００）は、低背化を図ることが可能となる。 The communication device (300) according to the twentieth aspect can be made low in height.
　１　第１電子部品
　１１　主面
　１３　外周面
　１５　外部電極
　２　第２電子部品
　２１　主面
　２３　外周面
　２５　外部電極
　２６　グランド電極
　３　第３電子部品
　３１　主面
　３３　外周面
　４　第４電子部品
　４１　主面
　４３　外周面
　５　樹脂層（第１樹脂層）
　５１　主面
　５３　外周面
　５４　アンダーフィル部
　５５　アンダーフィル部
　６　シールド層
　７　電子部品
　７１　主面
　８　外部接続端子
　８１　アンテナ端子
　８２Ａ　信号入力端子
　８２Ｂ　信号入力端子
　８３　信号出力端子
　８４　制御端子
　８５　グランド端子
　８００　先端面
　９　実装基板
　９１　第１主面
　９１１　凹部（第１凹部）
　９１１１　底面
　９１１２　内周面
　９１２　第２凹部
　９１２１　底面
　９１２２　内周面
　９２　第２主面
　９３　外周面
　９７　誘電体層
　９８　導電層
　１０　スタック構造体
　１０４　第１スイッチ
　１４０　共通端子
　１４１、１４２　選択端子
　１０５　第２スイッチ
　１５０Ａ　第１端子（共通端子）
　１５０Ｂ　第２端子
　１５１、１５２　第１選択端子
　１５３　第２選択端子
　１０６　第３スイッチ
　１６０　共通端子
　１６１、１６２　選択端子
　１６１、１６２　選択端子
　１０８　ＩＣチップ
　１１１　第１パワーアンプ
　１１２　第２パワーアンプ
　１１３　第１出力整合回路
　１１４　第２出力整合回路
　１１５　コントローラ
　１２１　ローノイズアンプ
　１２３　入力整合回路
　１３１　送信フィルタ（第１送信フィルタ）
　１３２　送信フィルタ（第２送信フィルタ）
　１３３　送信フィルタ（第３送信フィルタ）
　１７１　受信フィルタ（第１受信フィルタ）
　１７２　受信フィルタ（第２受信フィルタ）
　１７３　受信フィルタ（第３受信フィルタ）
　１００、１００ａ、１００ｂ、１００ｃ、１００ｄ、１００ｅ、１００ｆ　高周波モジュール
　２０５　第５電子部品
　２１５　外部電極
　２５１　主面
　２５３　外周面
　２０６　第２樹脂層
　２６１　主面
　２６３　外周面
　３００　通信装置
　３０１　信号処理回路
　３０２　ＲＦ信号処理回路
　３０３　ベースバンド信号処理回路
　３１０　アンテナ
　Ｄ１　厚さ方向
　Ｗ２０　ボンディングワイヤ
　Ｗ２１　第１ワイヤ
　Ｗ２２　第２ワイヤ 1 1st electronic component 11 main surface 13 outer peripheral surface 15 external electrode 2 2nd electronic component 21 main surface 23 outer peripheral surface 25 external electrode 26 ground electrode 3 3rd electronic component 31 main surface 33 outer peripheral surface 4 4th electronic component 41 main surface 43 Outer surface 5 Resin layer (first resin layer)
51 Main surface 53 Outer surface 54 Underfill part 55 Underfill part 6 Shield layer 7 Electronic components 71 Main surface 8 External connection terminal 81 Antenna terminal 82A Signal input terminal 82B Signal input terminal 83 Signal output terminal 84 Control terminal 85 Ground terminal 800 Tip Surface 9 Mounting board 91 1st main surface 911 Recessed portion (1st concave portion)
9111 Bottom surface 9112 Inner peripheral surface 912 Second concave portion 9121 Bottom surface 9122 Inner peripheral surface 92 Second main surface 93 Outer peripheral surface 97 Dielectric layer 98 Conductive layer 10 Stack structure 104 First switch 140 Common terminal 141, 142 Selection terminal 105 Second Switch 150A 1st terminal (common terminal)
150B 2nd terminal 151, 152 1st selection terminal 153 2nd selection terminal 106 3rd switch 160 common terminal 161, 162 selection terminal 161, 162 selection terminal 108 IC chip 111 1st power amplifier 112 2nd power amplifier 113 1st output Matching circuit 114 2nd output matching circuit 115 Controller 121 Low noise amplifier 123 Input matching circuit 131 Transmission filter (1st transmission filter)
132 Transmission filter (second transmission filter)
133 transmission filter (third transmission filter)
171 reception filter (first reception filter)
172 reception filter (second reception filter)
173 reception filter (third reception filter)
100, 100a, 100b, 100c, 100d, 100e, 100f High frequency module 205 5th electronic component 215 External electrode 251 Main surface 253 Outer surface 206 Second resin layer 261 Main surface 263 Outer surface 300 Communication device 301 Signal processing circuit 302 RF signal Processing circuit 303 Baseband signal processing circuit 310 Antenna D1 Thickness direction W20 Bonding wire W21 1st wire W22 2nd wire

Claims (20)

  1. 　互いに対向する第１主面及び第２主面を有する実装基板と、
    　前記実装基板の前記第１主面に実装されている第１電子部品と、
    　前記第１電子部品上に配置されている第２電子部品と、を備え、
    　前記実装基板の前記第１主面は、凹部を有し、
    　前記第１電子部品は、前記実装基板の前記第１主面において前記凹部に実装されている、
    　高周波モジュール。     A mounting board having a first main surface and a second main surface facing each other,
    The first electronic component mounted on the first main surface of the mounting board and
    A second electronic component arranged on the first electronic component is provided.
    The first main surface of the mounting board has a recess and has a recess.
    The first electronic component is mounted in the recess on the first main surface of the mounting board.
    High frequency module.
  2. 　前記実装基板の前記第１主面に配置されており、前記第１電子部品の外周面及び前記第２電子部品の外周面の少なくとも一部を覆っている樹脂層と、
    　前記樹脂層における前記実装基板側とは反対側の主面の少なくとも一部と、前記第１電子部品と前記第２電子部品とを含む複数の電子部品を有するスタック構造体の一部と、を覆っているシールド層と、を更に備え、
    　前記スタック構造体における前記複数の電子部品のうち前記実装基板から最も遠い電子部品における前記実装基板側とは反対側の主面は、前記シールド層に接している、
    　請求項１に記載の高周波モジュール。     A resin layer arranged on the first main surface of the mounting substrate and covering at least a part of the outer peripheral surface of the first electronic component and the outer peripheral surface of the second electronic component.
    At least a part of the main surface of the resin layer on the side opposite to the mounting board side, and a part of the stack structure having a plurality of electronic components including the first electronic component and the second electronic component. With a shield layer that covers it,
    Among the plurality of electronic components in the stack structure, the main surface of the electronic component farthest from the mounting board on the side opposite to the mounting board side is in contact with the shield layer.
    The high frequency module according to claim 1.
  3. 　前記複数の電子部品のうち前記実装基板から最も遠い前記電子部品は、送信系回路部品である、
    　請求項２に記載の高周波モジュール。     Among the plurality of electronic components, the electronic component farthest from the mounting board is a transmission system circuit component.
    The high frequency module according to claim 2.
  4. 　前記複数の電子部品のうち前記実装基板から最も遠い前記電子部品は、前記第２電子部品であり、
    　前記第１電子部品は、受信フィルタであり、
    　前記第２電子部品は、送信フィルタである、
    　請求項３に記載の高周波モジュール。     The electronic component farthest from the mounting board among the plurality of electronic components is the second electronic component.
    The first electronic component is a receiving filter.
    The second electronic component is a transmission filter.
    The high frequency module according to claim 3.
  5. 　前記第１電子部品は、所定の通信バンドの受信帯域を通過帯域とする受信フィルタであり、
    　前記第２電子部品は、前記所定の通信バンドの送信帯域を通過帯域とする送信フィルタである、
    　請求項１～４のいずれか一項に記載の高周波モジュール。     The first electronic component is a reception filter having a reception band of a predetermined communication band as a pass band.
    The second electronic component is a transmission filter having a transmission band of the predetermined communication band as a pass band.
    The high frequency module according to any one of claims 1 to 4.
  6. 　前記受信フィルタ及び前記送信フィルタの各々は、弾性波フィルタである、
    　請求項４又は５に記載の高周波モジュール。     Each of the receive filter and the transmit filter is an elastic wave filter.
    The high frequency module according to claim 4 or 5.
  7. 　前記第１電子部品は、ＩＣチップであり、
    　前記第２電子部品は、送信フィルタである、
    　請求項１～３のいずれか一項に記載の高周波モジュール。     The first electronic component is an IC chip.
    The second electronic component is a transmission filter.
    The high frequency module according to any one of claims 1 to 3.
  8. 　前記ＩＣチップは、ＩＰＤを含む、
    　請求項７に記載の高周波モジュール。     The IC chip contains an IPD.
    The high frequency module according to claim 7.
  9. 　前記第２電子部品を複数備え、
    　前記複数の第２電子部品は、１つの前記第１電子部品上に配置されている、
    　請求項７又は８に記載の高周波モジュール。     A plurality of the second electronic components are provided.
    The plurality of second electronic components are arranged on one said first electronic component.
    The high frequency module according to claim 7 or 8.
  10. 　前記実装基板の前記第１主面に配置されており、前記第１電子部品の外周面及び前記第２電子部品の外周面の少なくとも一部を覆っている樹脂層と、
    　前記樹脂層における前記実装基板側とは反対側の主面の少なくとも一部を覆っているシールド層と、
    　前記第２電子部品の有するグランド電極と前記シールド層とを接続している線状の第１ワイヤと、
    　前記シールド層と前記実装基板とを接続している線状の第２ワイヤと、を更に備える、
    　請求項１に記載の高周波モジュール。     A resin layer arranged on the first main surface of the mounting substrate and covering at least a part of the outer peripheral surface of the first electronic component and the outer peripheral surface of the second electronic component.
    A shield layer covering at least a part of the main surface of the resin layer opposite to the mounting board side,
    A linear first wire connecting the ground electrode of the second electronic component and the shield layer,
    A linear second wire connecting the shield layer and the mounting board is further provided.
    The high frequency module according to claim 1.
  11. 　第１パワーアンプと、
    　第２パワーアンプと、を更に備え、
    　前記第１パワーアンプは、第１パワークラスに対応し、
    　前記第２パワーアンプは、第２パワークラスに対応し、
    　前記第２パワークラスの最大出力パワーは、前記第１パワークラスの最大出力パワーよりも大きく、
    　前記第２電子部品は、前記第２パワーアンプに接続されている送信フィルタである、
    　請求項２又は３に記載の高周波モジュール。     With the first power amplifier
    With a second power amplifier,
    The first power amplifier corresponds to the first power class and corresponds to the first power class.
    The second power amplifier corresponds to the second power class and corresponds to the second power class.
    The maximum output power of the second power class is larger than the maximum output power of the first power class.
    The second electronic component is a transmission filter connected to the second power amplifier.
    The high frequency module according to claim 2 or 3.
  12. 　前記第１電子部品は、パワーアンプであり、
    　前記第２電子部品は、前記パワーアンプを制御するコントローラである、
    　請求項１に記載の高周波モジュール。     The first electronic component is a power amplifier.
    The second electronic component is a controller that controls the power amplifier.
    The high frequency module according to claim 1.
  13. 　互に異なる通信バンドの受信帯域を通過帯域とする複数の受信フィルタを更に備え、
    　前記第１電子部品は、ローノイズアンプであり、
    　前記第２電子部品は、前記複数の受信フィルタに接続されている複数の選択端子と前記ローノイズアンプに接続されており前記複数の選択端子に接続可能な共通端子とを有するスイッチである、
    　請求項１に記載の高周波モジュール。     It is further equipped with a plurality of reception filters whose pass band is the reception band of different communication bands.
    The first electronic component is a low noise amplifier.
    The second electronic component is a switch having a plurality of selection terminals connected to the plurality of reception filters and a common terminal connected to the low noise amplifier and connectable to the plurality of selection terminals.
    The high frequency module according to claim 1.
  14. 　前記実装基板の厚さ方向からの平面視で、前記第１電子部品の外形サイズが、前記凹部のサイズよりも小さく、前記第１電子部品の全部が前記凹部の一部に重なる、
    　請求項１～１３のいずれか一項に記載の高周波モジュール。     In a plan view from the thickness direction of the mounting substrate, the external size of the first electronic component is smaller than the size of the recess, and the entire first electronic component overlaps a part of the recess.
    The high frequency module according to any one of claims 1 to 13.
  15. 　前記第１電子部品は、前記実装基板の前記第１主面に接続されている複数の外部電極を有し、
    　前記複数の外部電極が前記凹部内に位置している、
    　請求項１～１４のいずれか一項に記載の高周波モジュール。     The first electronic component has a plurality of external electrodes connected to the first main surface of the mounting board.
    The plurality of external electrodes are located in the recesses.
    The high frequency module according to any one of claims 1 to 14.
  16. 　前記実装基板の前記第１主面に実装されている第３電子部品と、
    　前記第３電子部品上に配置されている第４電子部品と、を更に備え、
    　前記実装基板の前記第１主面は、前記凹部である第１凹部とは別に第２凹部を更に有し、
    　前記第３電子部品は、前記実装基板の前記第１主面において前記第２凹部に実装されている、
    　請求項１～１５のいずれか一項に記載の高周波モジュール。     A third electronic component mounted on the first main surface of the mounting board, and
    A fourth electronic component arranged on the third electronic component is further provided.
    The first main surface of the mounting board further has a second recess in addition to the first recess, which is the recess.
    The third electronic component is mounted in the second recess on the first main surface of the mounting board.
    The high frequency module according to any one of claims 1 to 15.
  17. 　前記実装基板の前記第２主面に配置されている複数の外部接続端子を更に備える、
    　請求項１～１６のいずれか一項に記載の高周波モジュール。     Further comprising a plurality of external connection terminals arranged on the second main surface of the mounting board.
    The high frequency module according to any one of claims 1 to 16.
  18. 　前記実装基板の前記第２主面に実装されている第５電子部品を更に備える、
    　請求項１７に記載の高周波モジュール。     Further comprising a fifth electronic component mounted on the second main surface of the mounting board.
    The high frequency module according to claim 17.
  19. 　前記実装基板は、多層基板であり、
    　前記多層基板は、
    　　前記実装基板の厚さ方向に積層されている複数の誘電体層を含み、
    　前記凹部は、前記実装基板の前記厚さ方向において前記複数の誘電体層のうち少なくとも１層の誘電体層にわたって形成されている、
    　請求項１～１８のいずれか一項に記載の高周波モジュール。     The mounting board is a multilayer board, and is a multilayer board.
    The multilayer board is
    A plurality of dielectric layers laminated in the thickness direction of the mounting substrate are included.
    The recess is formed over at least one of the plurality of dielectric layers in the thickness direction of the mounting substrate.
    The high frequency module according to any one of claims 1 to 18.
  20. 　請求項１～１９のいずれか一項に記載の高周波モジュールと、
    　前記高周波モジュールに接続されている信号処理回路と、を備える、
    　通信装置。     The high frequency module according to any one of claims 1 to 19.
    A signal processing circuit connected to the high frequency module.
    Communication device.
PCT/JP2021/046880 2020-12-24 2021-12-17 High frequency module and communication apparatus WO2022138514A1 (en)

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