WO2022138197A1

WO2022138197A1 - Substrate with barrier ribs, wavelength conversion substrate, display, and method for manufacturing wavelength conversion substrate

Info

Publication number: WO2022138197A1
Application number: PCT/JP2021/045294
Authority: WO
Inventors: 石塚雅敏; 梶野佳範
Original assignee: 東レ株式会社
Priority date: 2020-12-25
Filing date: 2021-12-09
Publication date: 2022-06-30
Also published as: KR20230121028A; TW202230836A; JPWO2022138197A1; CN116802713A

Abstract

The present invention addresses the problem of providing a substrate with barrier ribs, with which it is possible to implement a display device with little brightness unevenness and high display quality by reducing unevenness in pixel film thickness in a display region of a display. This substrate with barrier ribs has a substrate and barrier ribs formed on the substrate, and is characterized by having a region in which cells demarcated by the barrier ribs and opened upward are arranged in a grid shape, and in that the outermost barrier rib that forms the outer edge of the region or is formed so as to surround the region has a width wider than the width of barrier ribs that form portions other than the outer edge of the region, and has a portion having a height lower than other portions on at least one side in a direction in which the columns of the grid-shaped arrangement extend, and the portion having a lower height than the other portions satisfies the following (1) or (2).　(1) When the portion is connected to a cell, the width of a connection is narrower than the width of the cell. (2) When the portion is not connected to any cell, the area of the portion is larger than the area of a cell closest thereto.

Description

A method for manufacturing a substrate with a partition wall, a wavelength conversion substrate, a display, and a wavelength conversion substrate.

The present invention relates to a substrate with a partition wall, a wavelength conversion substrate, a display, and a method for manufacturing a wavelength conversion substrate.

In recent years, with the development of information terminal devices such as smartphones and tablets and the increasing definition of flat panel displays such as televisions, the demand for higher performance displays is increasing. Among them, wavelength conversion type OLED displays and LED displays are attracting attention as high-performance displays. These displays use an organic light emitting diode (OLED) or light emitting diode (LED) driven by an active matrix as a light source, and display at least a part of the light in full color by changing it with a wavelength conversion material. , Excellent in contrast and color reproducibility. These displays are characterized by the fact that multiple panels made in units can be combined in any shape and joined together, and the image can be controlled by a controller or the like to form a display of any size and resolution. It is called technology.

As a method of using an OLED as a light source, a method of using an OLED that emits blue light is known (Patent Document 1). In this case, in the blue subpixel, the light from the OLED is transmitted and scattered without wavelength conversion, and in the green and red subpixels, the blue light from the OLED is converted into green and red by the wavelength conversion material, respectively. It is transparent.

As a method of using an LED as a light source, a blue light emitting LED is used as in the OLED, and in addition to a method of converting a part of light into red and green with a wavelength conversion material, an ultraviolet light emitting LED is used as a wavelength conversion material. A method for converting to blue, green, and red is known (Patent Document 2).

In these wavelength conversion type displays, it is necessary to arrange the wavelength conversion material in a pattern with a size corresponding to the OLED which is the light source and the subpixel of the LED. As a method for patterning a wavelength conversion material, a photolithography method and an inkjet method (Patent Document 3) are known. However, in the photolithography method, the wavelength conversion material is applied to the entire surface, exposed at a predetermined position, and then most of the material is removed by development. Therefore, the loss of the wavelength conversion material is large, and the process also repeats exposure and development multiple times. There were challenges that were necessary and complicated. In addition, the inkjet method is excellent in material efficiency because the wavelength conversion layer can be formed only at a desired position. However, in order to apply an ink containing a wavelength conversion material by inkjet, it is necessary to design the ink to have a low viscosity. There is a problem that particle components such as a wavelength conversion material settle in the ink, and the inkjet nozzle is easily clogged.

On the other hand, the nozzle coating method is known as a paste coating method. When this method is applied, the coating liquid containing the wavelength conversion material is made into a paste and discharged from the nozzle. FIG. 1 shows a schematic diagram showing a method of applying the wavelength conversion paste by the nozzle application method. The nozzle coating method has a space (manifold) for storing the paste 2 inside the coating head 1, and while relatively moving the coating head 1 facing the substrate 3, the pressurized pipe 4 connected to the space. A coating method in which a coating liquid is applied and filled in an opening 7 (cell) partitioned by a partition wall 6 by discharging a paste 2 from a discharge hole 5 by introducing compressed air whose pressure is controlled through the coating method to form pixels. Is. Here, when RGB display is performed, this pixel is filled with a coating liquid corresponding to red, green, and blue, and each pixel functions as a sub-pixel, and each sub-pixel is collectively one pixel. It becomes. In the nozzle coating method, the viscosity of the paste can be higher than that of the inkjet method. Therefore, by designing the viscosity higher, it is possible to suppress the clogging of the nozzle due to the sedimentation of the particle components, so it is especially used in the coating of paste containing particles. ing.

Special Table 2006-501617 Special Table 2016-523450 Gazette International Publication No. 2018/123103

In order to improve the definition of the display, the partition walls that partition the wavelength conversion materials of each color are becoming thinner. However, when a fine line pattern having a partition wall width of 20 μm or less is formed by a photolithography method, the adhesion between the partition wall and the base substrate is insufficient due to the thinning, and the partition wall is peeled off from the base during development. Occurs. This problem is particularly likely to occur at the outer periphery of the pattern. Therefore, it is conceivable to make the width of the partition wall constituting the outer peripheral portion of the pattern relatively thicker than the width of the partition wall existing inside. On the other hand, in the nozzle coating method, the discharge amount may not be stable immediately after the start of discharge of the coating liquid, so coating is performed up to the space (opening 7) surrounded by the partition wall used as a pixel in actual use. The discharge of the liquid is started. That is, the coating is started from the time point up to the outer peripheral portion of the region where the partition wall is provided. At this time, if the thickness of the partition wall constituting the outer periphery of the area where the partition wall is provided is thicker than the width of the inner partition wall, the coating liquid rides on the partition wall having the thick width, and the state continues for a while. This causes a problem that the gap between the nozzle and the substrate provided with the partition wall suddenly changes and the bead collapses, and then the coatability is not stable for a while, that is, the steady coating collapses. As a result, there arises a problem that the film thickness of the coating film in the portion to be a pixel is not stable, which causes display unevenness on the outer peripheral portion of the display. Further, since the coating liquid applied on the thick partition wall remains as a residue after drying, it also leads to a cause of poor bonding at the time of bonding when manufacturing a display panel.

Further, looking at the case where a plurality of partition wall patterns manufactured for each unit are joined by the tying technique, the thick partition wall constituting the outer circumference is present, and the thick partition wall constituting the outer periphery is present at the jointed portion. Since they are joined to each other, the area of the non-pixel portion becomes large, and there is a problem that the joined portion is visually recognized as uneven when displaying on a display.

Therefore, it is an object of the present invention to provide a substrate with a partition wall pattern capable of reducing the variation in film thickness in the pixel portion of the substrate provided with the partition wall pattern, and to provide a display with high display quality. ..

Further, in a preferred embodiment of the present invention, it is an object to provide a substrate with a partition wall pattern capable of minimizing the area of the joint portion at the time of tiling.

In order to solve the above problems, the substrate with a partition wall of the present invention has the following configuration. That is, it is a substrate with a partition wall having a substrate and a partition wall in which a pattern is formed on the substrate, and the cells partitioned by the partition wall have a region arranged in a grid pattern, and the outer edge of the region is formed. The outermost partition wall formed or formed to surround the region has a width wider than the width of the partition wall forming other than the outer edge of the region, and is on an extension of the row of the grid array. A substrate with a partition wall that has a portion lower in height than the other portion on at least one side intersecting with the other portion and the portion lower in height than the other portion satisfies the following (1) or (2). ,.
(1) When connected to a cell, the width at the connection portion shall be narrower than the width of the cell.
(2) When not connected to a cell, the area should be larger than the area of the nearest cell.

Further, one of the preferred embodiments of the substrate with a partition wall of the present invention is a substrate with a partition wall satisfying the above (2), and the maximum width of a portion having a lower height than other parts of the partition wall located on the outermost side is set. It is a substrate with a partition wall, which is 98% or less of the width of the partition wall located on the outermost side corresponding to the portion having a height lower than the other portion showing the maximum width.

Further, one of the preferred embodiments of the substrate with a partition wall of the present invention is that the partition wall located on the outermost side is higher in the partition wall in a direction orthogonal to the extension line of the row of the grid-like arrangement than the other parts. The width of the portion where the proportion of the low portion of the portion is 50% or more and the proportion of the portion having a lower height than the other portion is 50% or more is the partition wall in which the portion is present. It is a substrate with a partition wall, which is 20% or less of the width of the above.

In the substrate with a partition wall of the present invention, a material for a display device such as a light emitting material or a wavelength conversion material such as a phosphor is used by reducing the variation in the film thickness of the material filled in the cells partitioned by the partition wall. In that case, it is possible to provide a display device having little variation in brightness and high display quality.

It is a schematic diagram which showed the paste application method by the nozzle application method. It is a top view which shows one aspect of the conventional substrate with a partition wall. It is a top view which shows one aspect of the conventional substrate with a partition wall. It is a top view which shows one aspect of the conventional substrate with a partition wall. It is a top view which shows one aspect of the substrate with a partition wall of this invention. It is a top view which shows another aspect of the substrate with a partition wall of this invention. It is a top view which shows one aspect of the substrate with a partition wall which does not belong to this invention. It is a top view which shows another aspect of the substrate with a partition wall of this invention. It is a top view which shows another aspect of the substrate with a partition wall of this invention. It is a top view which shows another aspect of the substrate with a partition wall of this invention. It is a top view which shows another aspect of the substrate with a partition wall of this invention. It is a top view which shows another aspect of the substrate with a partition wall of this invention. It is a top view which shows another aspect of the substrate with a partition wall of this invention. It is a top view and a partial sectional view which shows another aspect of the substrate with a partition wall of this invention. It is a top view and a partial sectional view which shows another aspect of the substrate with a partition wall of this invention. It is a top view and a partial sectional view which shows another aspect of the substrate with a partition wall of this invention. It is a top view and a partial sectional view which shows another aspect of the substrate with a partition wall of this invention. It is a top view and a partial sectional view which shows another aspect of the substrate with a partition wall of this invention. It is a top view and a partial sectional view which shows another aspect of the substrate with a partition wall of this invention. It is a top view and a partial sectional view which shows another aspect of the substrate with a partition wall of this invention. It is a top view and a partial sectional view which shows another aspect of the substrate with a partition wall of this invention. It is a top view and a partial sectional view which shows another aspect of the substrate with a partition wall of this invention.

The substrate with a partition wall of the present invention has a substrate and a partition wall.

In the present invention, the substrate has a function as a support in a substrate with a partition wall. Examples of the substrate include a glass plate, a resin plate, a resin film, and the like. Further, these may be provided with a functional layer such as a color filter. As the material of the glass plate, non-alkali glass is preferable. As the material of the resin plate and the resin film, polyester, (meth) acrylic polymer, transparent polyimide, polyether sulfone and the like are preferable. The thickness of the glass plate and the resin plate is preferably 1 mm or less, preferably 0.8 mm or less. The thickness of the resin film is preferably 100 μm or less.

In the present invention, the substrate with a partition wall has a partition wall on the substrate. Further, in the present invention, the surface of the substrate on the side having the partition wall has cells partitioned by the partition wall, and the cells are opened on the surface surrounded by the top of the partition wall so that the fluorescent substance paste or the like can be filled. is doing.

In the present invention, the cells partitioned by the partition wall are arranged in a grid pattern. It is planned that the region in which the cells are arranged in a grid pattern will be a region corresponding to pixels when the wavelength conversion substrate is used. In the present invention, the grid-like arrangement refers to an arrangement having at least one set of parallel-arranged partition walls in a group of cells arranged on a substrate surface. With such a grid-like arrangement, the wavelength conversion layer can be easily formed by the nozzle coating method by sweeping the nozzle while discharging the coating material in parallel with the partition walls arranged in parallel. It is desirable that the parallelism in the group of partition walls arranged in parallel is completely parallel, but when the nozzle for discharging the object to be coated is swept along the partition wall, the cell to be coated has an object to be coated. It is permissible for the bulkhead to be serpentine, curved or skewed to the extent that it can be filled.

In the substrate with a partition wall of the present invention, the outermost partition wall formed so as to form the outer edge of the region in which the cells are arranged in a grid pattern or to surround the region is other than the outer edge of the region. It has a width wider than the width of the partition wall forming the above (hereinafter, the outermost partition wall is referred to as a "frame portion" for convenience).

FIG. 2 shows an enlarged view of the vicinity of the frame portion of the substrate with a partition wall in which the width of the outer edge portion (corresponding to the frame portion) of the group of cells partitioned by the conventional partition wall is larger than the width of the partition wall existing between the cells. In the case of a wavelength conversion substrate, the partition wall 6 is a color element in which cells are partitioned corresponding to each pixel of a red pixel (10R), a green pixel (10G), and a blue pixel (10B), and each pixel is grouped together. That is, the partition wall pattern portion 8 is formed as a pixel pattern in which pixels (referred to as RGB pixels (10) for convenience) are arranged at an arbitrary pitch. In this example, a frame portion 9 is provided on the outermost circumference of the partition wall pattern so as to surround the inner cell. Further, the substrate with a partition wall has a region where no partition wall is formed on the outside of the frame portion 9. In the present invention, the region where the outer partition wall of the frame portion 9 is not formed is referred to as a non-pixel portion (non-pixel portion 12) for convenience.

Here, the cells are arranged in a grid pattern, and when the outer shape of the cells is rectangular when viewed from the upper surface, it is stable to apply the cells in the long side direction using a nozzle. It is preferable from the viewpoint of sex. Therefore, in each figure, the coating material is discharged from the side of the region where the partition wall is not provided, in parallel with the partition wall forming the long side of the cell (hereinafter, may be referred to as “vertical partition wall” for convenience). The following will be described with reference to an example on the premise that the nozzle is swept and the coating is performed. Further, in the cell, the inner dimension width in the direction orthogonal to the vertical partition wall is defined as the cell horizontal width _WA , and the internal dimension in the direction parallel to the vertical partition wall is defined as the cell vertical width _LA . Further, among the partition walls forming the short side of the cell (hereinafter, may be referred to as “horizontal partition wall” for convenience), the width of the partition wall between adjacent cells is defined as the cell spacing wall width _LB. Further, the areas of the red pixels (10R), the green pixels (10G), and the blue pixels ( _10B ) are set to SR, SG, and SB, respectively, and the minimum value among the areas of the RGB pixels is the cell _minimum area _S. Let it be _{RGB MIN} . Further, among the lateral partition walls, the width of the partition wall located on the outermost side (frame portion) that the nozzle first reaches is defined as the frame portion vertical width _LF (see FIG. 2). In the substrate with a partition wall shown in FIG. 2, when coating is performed by the nozzle coating method as described above, the columnar flow coating liquid from the nozzle runs on the frame portion 9, the coating liquid is disturbed, and the pixel film thickness at the pattern start portion fluctuates. Becomes larger.

In FIGS. 3 and 4, the width of the frame portion that also serves as the short _side of the cell is about the same as the width of the partition wall that partitions the cells, that is, the cell spacing wall width (LB). As described above, in such a substrate with a partition wall, if a fine pattern having a partition wall width of 20 μm or less is used, the partition wall is peeled off during processing, which makes stable processing difficult.

5 and 6 show an example of the substrate with a partition wall of the present invention. In the example shown in FIG. 5, the frame portion 9 is connected to the cell and has a portion (connection type buffer portion 13) having a height lower than that of other portions of the frame portion. In this example, the frame portion 9 is the same. The portion is also connected to the outside of the region where the partition wall is provided, that is, the non-pixel portion 12. In FIG. 5, the width ( _WF ) of the connection type shock absorber 13 is constant, but in that case, in order to reduce the change in coatability due to the application of the coating liquid on the frame portion 9, _WF > ( _WA /). 4) is preferable, and _WF ≧ ( _WA / 2) is further preferable in order to reduce the change in the filling amount of the coating liquid into the RGB pixels 10. Further, from the viewpoint of pattern workability and prevention of pattern peeling, it is preferable that _WA > _WF .

Further, in the example shown in FIG. 6, the connection type shock absorber 13 has a width narrower than the width of the connected cell at the portion (connection portion) connected to the cell, but is in the region where the partition wall is provided. It also has a widened part until it is connected to the outside. Here, in the connection type buffer portion 13, the width of the widest portion is the maximum value WF _MAX of the width of the connection type buffer portion, and the width of the narrowest portion is the minimum value _WF of the width of the connection type buffer portion. When _MIN is set, it is preferable to set _{WF MIN} ≧ ( _WA / 2) in order to suppress the change in the filling amount of the coating liquid in the cell, and from the viewpoint of pattern processability, _WA ≧ WF _MAX . Is preferable.

Further, the vertical width ( _LF ) of the frame portion is preferably _LF > _LB in order to maintain the pattern processability of the partition wall and the stability of coating, and _LF ≧ _LA / 2. preferable.

Here, it is preferable that the height of the partition wall forming the frame portion corresponding to the connection type buffer portion 13 is lower, because the cushioning effect can be easily obtained, and it is 1 / of the height of the other portion of the partition wall forming the frame portion. It is usually 2 or less. This height is preferably 1/4 or less of the height of the other portion of the partition wall forming the frame portion, and most preferably the height is zero (that is, the substrate is exposed). The same can be said for the height of the partition wall forming the frame portion corresponding to the stand-alone shock absorber described later.

When the connected buffer or the stand-alone buffer described later is connected to the cell or the non-pixel portion, and the height of the partition wall forming the frame portion corresponding to the connected buffer or the stand-alone buffer is zero. Is that the line segment connecting the ends of the frame portion on the connected cell side or the non-pixel portion side is the boundary between the connected buffer portion or the stand-alone buffer portion (and the relationship between the connected buffer portion and the cell). Connection).

12 and 13 are modified examples, in which the connected buffer is connected to an adjacent (that is, provided corresponding to the adjacent pixel) connected buffer to form one connected buffer. There is. In such an embodiment, the action of the stand-alone shock absorber described later can be further obtained, higher coating stability can be realized, and further, the thickness of the object to be coated to be filled in the cell is not sufficient. It is possible to suppress the uniformity, and when such a substrate with a partition wall is used as a wavelength conversion substrate, it is possible to prevent display unevenness on the outer peripheral portion of the display.

Next, another aspect of the present invention will be described with reference to FIGS. 8 to 11. In these embodiments, the portion of the frame portion that is lower in height than the rest of the frame portion is not connected to the cell (stand-alone shock absorber 14). The stand-alone shock absorber 14 has an effect of substantially reducing the vertical width of the frame portion when focused on the sweep direction of the nozzle, and reduces the instability of coating due to the coating liquid from the nozzle riding on the frame portion. be able to. The larger the area of the buffer ( _SF ), the greater this effect, but from the viewpoint of contributing to the stability of application, the opening area is larger than the area of the nearest cell, and more preferably the volume of the nearest cell. It is necessary to have a larger volume. When the opening area and volume of the cell are different in each RGB pixel, it is desirable that the area of the stand-alone shock absorber is larger than the cell minimum area ( _{SRGB MIN} ), that is, it is preferable that SF> _SRGB _MIN . By having a larger capacity than the coating liquid storage capacity of the nearest cell in terms of the liquid storage capacity of the coating liquid, the effect of substantially reducing the vertical width of the frame portion is obtained, and the coating is stabilized. Because it can be done. The larger the area ( _SF ) of the cushioning portion is, the more preferable it is, but if it is too large, the effect of suppressing the peeling of the partition wall by the frame portion may appear. Further, it is desirable that the width ( _LBF ) of the partition wall separating the stand-alone shock absorber and the cell existing in the vicinity thereof is _LBF > _LB from the viewpoint of partition wall workability, and the coating instability due to the stand-alone shock absorber 14 It is preferable that _LBF < _LA / 2 so as not to hinder the effect of reduction.

Further, in the present invention, when the stand-alone shock absorber 14 is provided, the maximum value ( _LFO ) of the width of the stand-alone shock absorber 14 is 98% or less of the vertical width ( _LF ) of the frame portion in which the stand-alone shock absorber 14 exists. Is preferable. By doing so, it is possible to suppress the peeling of the pattern from the frame portion provided with the independent buffer portion 14, and to suppress the decrease in the yield. The ( _LFO / _LF ) is more preferably 95% or less, still more preferably 90% or less.

The stand-alone shock absorber 14 may be surrounded on all sides by a partition wall, but as shown in FIGS. 10 and 11, the wall forms a wall on the side opposite to the side where the partition wall constituting the RGB pixel 10 is provided. The part does not have to exist. Such a configuration is effective in reducing the substantial width of the frame portion from the viewpoint of sweeping the nozzle while suppressing the peeling of the partition wall by the frame portion, and is extremely advantageous in stabilizing the coating. Further, in this case, the height of the partition wall forming the frame portion corresponding to the stand-alone shock absorber 14 is 1/20 or more of the height of the other portion of the frame portion, which is a viewpoint of suppressing peeling of the partition wall. It is preferable from.

Further, in the substrate with a partition wall of the present invention, the proportion of a portion having a lower height than other parts is 50% in the frame portion in the direction orthogonal to the extension line of the row of the grid-like arrangement intersecting the frame portion. The width of the portion having the above-mentioned portion and having a portion having a height lower than the other portion of 50% or more may be 20% or less of the width of the partition wall in which the portion exists. Preferred (hereinafter, such a portion may be referred to as a "split portion"). Further, the width of the cut portion is preferably 10% or less of the vertical width of the frame portion. By having such a feature, the splittability in the frame portion is improved, and even in a display device to which the tiling technique is applied, it is possible to realize a display with less image deviation and unevenness across the substrate. ..

Hereinafter, it will be specifically described using drawings. The present invention is not limited to the examples described with reference to the drawings.

FIG. 14 shows a groove having a cross-sectional shape of _LD3 in which a square is added to the top of a trapezoidal cross section when viewed in a direction perpendicular to the extension line of a frame portion 9 intersecting on an extension line of a row of grid-like arrangements. This is an example in which a certain cutting groove portion 15 is provided (see the cross-sectional view taken along the line AA'). In this example, when viewed in the direction perpendicular to the extension line of the row of the grid array, all of them are the connection type buffer portion 13, or the strip-shaped portion which is the groove, that is, the split portion is present. Will be there. Since the strip-shaped portion has a width of 20% or less of the vertical width ( _LF ) of the frame portion, it is easy to divide the strip-shaped portion. FIG. 15 is a modified example in which the frame portion 9 is provided with a groove having a semicircular cross-sectional shape. In these examples, the partition wall thickness (HD) of the split groove portion 15 is the partition wall film thickness ( _H ) of the frame portion from the viewpoint of further suppressing the partition wall of the frame portion from peeling from the base in the partition wall pattern developing step. It is preferable that 1/20 or more of _F ), that is, _HD > 1/20 _HF . Further, in order to improve the cutting accuracy, _HD < _HF is preferable, and _HD <1 / _2HF is more preferable.

Further, as another embodiment, FIG. 16 shows an example in which a split groove portion 15 having a rectangular opening in the shape of an opening is provided in a frame portion 9 intersecting on an extension line of a row of grid-like arrangements. In this example, when viewed in the direction perpendicular to the extension line of the row of the grid array, the connection type buffer portion 13 or the portion of the opening having a rectangular hole occupies 50% or more. There is a band-shaped portion that occupies (see the A-A'cross section), that is, there is a split portion. Since the strip-shaped portion has a width of 20% or less of the vertical width ( _LF ) of the frame portion, it is easy to divide the strip-shaped portion. FIG. 17 is a modified example in which the frame portion 9 is provided with a hole having an elliptical opening. In these examples, the partition wall film thickness (HD) of the split groove portion 15 is preferably _HD < _HF , more preferably _HD <1 / _2HF , in _order to improve the split accuracy. , _HD = 0 is more preferred.

Further, FIGS. 18 to 20 show an example in which the frame portion 9 intersecting on the extension line of the rows of the grid arrangement is in contact with the connection type shock absorber portion 13 and the frame portion 9 is provided with the split groove portion 15 which is a notch portion. Is. In these examples, when viewed in the direction perpendicular to the extension line of the row of the grid-like arrangement, it is a connection type buffer portion 13, or a strip-shaped portion in which the notched portion occupies 50% or more. (Refer to the AA'cross section in each figure), that is, there is a split portion. Since the strip-shaped portion has a width of 20% or less of the vertical width ( _LF ) of the frame portion, it is easy to divide the strip-shaped portion. In these examples, the partition wall thickness ( _HD ) of the cutting groove portion 15 corresponding to the _notched portion is preferably _HD < _HF in order to improve the cutting accuracy, and HD <1 /. It is more preferably _2HF , and even more preferably _HD = 0.

Further, the examples shown in FIGS. 21 to 22 are examples in which the frame portion 9 has the independent cushioning portion 14, and in the example shown in FIG. 21, the description of the split portion is the same as that described in FIG. In the example shown in 22, the content described in FIG. 16 is incorporated.

Further, as shown in FIGS. 14 to 22, the portion of the frame that is in contact with the nearest cell is the upper end of the frame 20, and the boundary of the split groove 15 that is closer to the upper end of the frame is the upper end of the split groove 21. When the boundary closer to the non-pixel 12 is the lower end portion 22 of the cutting groove, the width ( _LD1 ) of the upper end portion 20 of the frame and the upper end portion 21 of the cutting groove is LB _≤ from the viewpoint of improving the accuracy of cutting. It is preferably _LD1 . Further, in a display device using the tiling technique, it is possible to realize a display with less image shift and unevenness across the substrate, so it is preferable to set L _D1 ≤ 1 / 2L _F , and L _D1 ≤ 1 / 4L. It is more preferable to set it to _F. Further, the width ( _LD2 ) of the upper end portion 20 of the frame and the lower end portion 22 of the cutting groove is preferably _LD2 < _LF from the viewpoint of improving the accuracy of cutting. Further, in a display device using the tiling technique, it is more preferable that L _D2 ≤ 1 / _2LF because it is possible to realize a display with less image deviation and unevenness across the substrate. Further, assuming that the width from the upper end portion 21 of the splitting groove to the lower end portion 22 of the splitting groove is the splitting groove portion width ( _LD3 ), the ratio of the splitting groove portion width to the vertical width of the frame portion ( _LD3 / _LF ) as described above. ) Is preferably 20% or less, more preferably 10% or less.

Examples of the method of cutting the substrate include scribing cutting and laser cutting. Examples of scribing cutting include wheel scribing and laser scribing. Examples of the laser cutting include cutting using a fiber laser, a YAG laser, a CO ₂ laser, a UV laser, an excima laser, an LD laser, a nanosecond pulse laser, a picosecond pulse laser, and a femtosecond pulse laser. ..

The substrate with a partition wall of the present invention can be preferably used as a member of a display device. It is preferable that each cell is provided as a pattern corresponding to a pixel. Examples of the number of pixels of the display include 2,000 pixels vertically and 4,000 pixels horizontally. The number of pixels affects the resolution (fineness) of the displayed image. Therefore, it is necessary to form a number of pixels according to the required image resolution and the screen size of the display, and it is preferable to determine the pattern formation dimension of the partition wall accordingly. Further, it is preferable that the partition wall has a liquid-repellent property so that the coating liquid applied by the nozzle coating method flows into the cell without remaining on the top of the partition wall.

When the partition wall is filled with a material (wavelength conversion material) that converts the wavelength of an electromagnetic wave into another wavelength to form a wavelength conversion layer, light is transmitted / scattered from one pixel to an adjacent pixel. It is preferable to have a function to prevent the above.

The height of the partition wall is preferably larger than the thickness of the cured product of the wavelength conversion paste when the cured product of the wavelength conversion paste is contained in the cell of the substrate with the partition wall. Specifically, the height of the partition wall 6 is preferably 0.5 μm or more, and more preferably 5 μm or more. On the other hand, the height of the partition wall is preferably 100 μm or less, more preferably 70 μm or less, still more preferably 50 μm or less, from the viewpoint of more efficiently extracting light emission at the bottom of the layer containing the wavelength conversion light emitting material. Further, the cell spacing wall width may be sufficient to improve the brightness by utilizing the light reflection on the side surface of the partition wall and suppress the color mixing of the light emitted from the cured product of the adjacent wavelength conversion paste due to light leakage. Specifically, the cell spacing wall width is preferably 0.5 μm or more, and more preferably 10 μm or more.

In the present invention, the cells partitioned by the partition walls in the partition wall-equipped substrate may be filled with a wavelength conversion material. In the present invention, the wavelength conversion material refers to a material having a wavelength conversion property that absorbs an electromagnetic wave and emits an electromagnetic wave having a wavelength different from the wavelength of the absorbed electromagnetic wave. A wavelength conversion substrate containing a wavelength conversion material is patterned and applied to prepare a wavelength conversion substrate, which can be combined with an OLED light source or an LED light source to form a full-color display.

As the wavelength conversion material, an inorganic phosphor or an organic phosphor can be used. For example, in the case of a display in which an OLED that emits blue light and a wavelength conversion substrate are combined, a red phosphor that is excited by blue excitation light and emits red fluorescence is placed in a region corresponding to the red subpixel. It is preferable to use it as a wavelength conversion material, and in the region corresponding to the green subpixel, it is preferable to use a green phosphor that is excited by blue excitation light and emits green fluorescence as a wavelength conversion material, and it is preferable to use a blue subpixel. It is preferable not to use a wavelength conversion material in the region corresponding to. Similarly, the wavelength conversion substrate of the present invention can also be used for a display of a method using a blue LED or an ultraviolet light emitting LED corresponding to each subpixel as a backlight. The light emission of each subpixel can be turned ON / OFF by driving the OLED or the active matrix of the LED.

The inorganic phosphor emits each color such as green and red. Inorganic phosphors include those excited by excitation light with a wavelength of 400 to 500 nm and having a peak in the emission spectrum in the region of 500 to 700 nm, and nanoscale particles having unique optical characteristics according to quantum mechanics called quantum dots. Examples include inorganic semiconductor fine particles. Examples of the shape of the former inorganic phosphor include a spherical shape and a columnar shape. Examples of such inorganic phosphors include YAG-based phosphors, TAG-based phosphors, sialon-based phosphors, Mn ⁴⁺ activated fluoride complex phosphors, and the like. Two or more of these may be used.

Among these, the quantum dot material is preferable. Since quantum dots have sharper peaks in the emission spectrum than other phosphors, the color reproducibility of the display can be improved. By using quantum dots with a relatively small particle size of several nm, it is possible to suppress the residue of inorganic phosphor particles on the partition wall and improve the bonding accuracy when manufacturing panels. Become. Further, for the same reason, it is possible to improve the accuracy of splitting by using quantum dots.

Examples of the material of the quantum dot include semiconductors of group II-IV, group III-V, group IV-VI, and group IV. Examples of these inorganic semiconductors include Si, Ge, Sn, Se, Te, B, C (including diamond), P, BN, BP, BAs, AlN, AlP, AlAs, AlSb, GaN, GaP, GaAs, and the like. GaSb, InN, InP, InAs, InSb, ZnO, ZnS, ZnSe, ZnTe, CdS, CdSe, CdSeZn, CdTe, HgS, HgSe, HgTe, BeS, BeSe, BeTe, MgS, MgSe, GeS, GeS Examples thereof include SnSe, SnTe, PbO, PbS, PbSe, PbTe, CuF, CuCl, CuBr, CuI, Si ₃ N ₄ , Ge ₃ N ₄ , and Al ₂ O ₃ . Two or more of these may be used.

Quantum dots may contain a p-type dopant or an n-type dopant. Further, the quantum dots may have a core-shell structure. In the core-shell structure, any suitable functional layer (single layer or multiple layers) may be formed around the shell depending on the purpose, and the surface of the shell may be surface-treated and / or chemically modified. ..

Examples of the shape of the quantum dot include a spherical shape, a columnar shape, a flaky shape, a plate shape, an amorphous shape, and the like. The average particle size of the quantum dots can be selected according to the desired emission wavelength, and is preferably 1 to 30 nm. When the average particle size of the quantum dots is 1 to 10 nm, the peak in the emission spectrum can be sharpened in each of blue, green and red. For example, when the average particle size of the quantum dots is about 2 nm, blue light is emitted, when it is about 3 nm, green light is emitted, and when it is about 6 nm, red light is emitted. The average particle size of the quantum dots is preferably 2 nm or more, and preferably 8 nm or less. The average particle size of the quantum dots can be measured by a dynamic light scattering method. Examples of the device for measuring the average particle size include a dynamic light scattering photometer DLS-8000 (manufactured by Otsuka Electronics Co., Ltd.).

Examples of the organic phosphor include a phosphor that is excited by blue excitation light and emits red fluorescence, and a phosphor that is excited by blue excitation light and emits green fluorescence, such as a pyrromethene derivative. Other examples include a perylene-based derivative, a porphyrin-based derivative, an oxazine-based derivative, and a pyrazine-based derivative that emit red or green fluorescence depending on the selection of the substituent. Two or more of these may be contained. Among these, a pyrromethene derivative is preferable because of its high quantum yield. The pyrromethene derivative can be obtained, for example, by the method described in JP-A-2011-241160.

Since the organic phosphor is soluble in a solvent, a layer containing a wavelength conversion material having a desired thickness can be easily formed.

In the present invention, the wavelength conversion layer may contain light scattering particles. By containing the light-scattering particles, blue light and ultraviolet light are scattered in the wavelength conversion layer, so that the optical path length becomes long, and the light conversion efficiency of the wavelength conversion material can be improved.

The light-scattering particles are preferably barium sulfate, aluminum oxide, zirconium oxide, zinc oxide, or titanium oxide. Two or more of these may be contained.

The refractive index of the light-scattering particles at a wavelength of 587.5 nm is preferably 1.60 to 2.70. By setting the refractive index of the light-scattering particles to 1.60 or more, the scattering property of blue light in the wavelength conversion layer by the light-scattering particles is improved, and the light conversion efficiency by the wavelength conversion material is likely to be improved. On the other hand, by setting the refractive index of the light-scattering particles to 2.70 or less, excessive scattering by the light-scattering particles is suppressed, and the emitted light after wavelength conversion can be easily taken out of the cell. When two or more kinds of light-scattering particles are contained, it is preferable that the refractive index of at least one kind is in the above range.

The content of the light-scattering particles is preferably 1% by weight or more, more preferably 5% by weight or more, and further preferably 10% by weight or more in the solid content from the viewpoint of further improving the light conversion efficiency. On the other hand, the content of the light-scattering particles is preferably 70% by weight or less, more preferably 60% by weight or less, and 50% by weight or less in the solid content from the viewpoint of suppressing the decrease in luminous efficiency due to the concentration quenching of the wavelength conversion material. Is even more preferable. The solid content here means all the components contained in the wavelength conversion paste, excluding the volatile components such as the solvent. The amount of solid content can be determined by heating the wavelength conversion paste at 150 ° C. for 1 hour and measuring the residue obtained by evaporating the volatile components. When the substrate with a partition wall of the present invention is used as the wavelength conversion substrate, the wavelength conversion layer is preferably formed by curing the wavelength conversion paste. The wavelength conversion paste is a paste material containing a wavelength conversion material, and can be easily applied to a substrate with a partition wall by a nozzle coating method by appropriately designing the composition. The method of curing the wavelength conversion paste is not particularly limited, but a method of curing a wavelength conversion paste containing a polymerizable compound with heat or light, or a method of volatilizing a solvent from a wavelength conversion paste containing a solvent to cure it. And so on.

The wavelength conversion paste may contain a monomer as a polymerizable compound. The monomer in the present invention refers to a compound polymerized by an active species generated by the reaction of a polymerization initiator described later.

The monomer used for the wavelength conversion paste is preferably a compound having an ethylenically unsaturated double bond in the molecule. The monomer preferably has two or more ethylenically unsaturated double bonds in the molecule. Considering the ease of radical polymerization, the monomer preferably has a (meth) acrylic group. The double bond equivalent of the monomer is preferably 400 g / mol or less from the viewpoint of further improving the sensitivity in pattern processing.

Examples of the monomer include diethylene glycol diacrylate, triethylene glycol diacrylate, tetraethylene glycol diacrylate, polyethylene glycol diacrylate, dipropylene glycol diacrylate, tripropylene glycol diacrylate, polypropylene glycol diacrylate, diethylene glycol dimethacrylate, and triethylene. Glycol dimethacrylate, tetraethylene glycol dimethacrylate, polypropylene glycol dimethacrylate, trimethylolpropane diacrylate, trimethylolpropanetriacrylate, trimethylolpropanedimethacrylate, trimethylolpropanetrimethacrylate, 1,3-butanediol diacrylate, 1, 3-Butanediol dimethacrylate, neopentyl glycol diacrylate, 1,4-butanediol diacrylate, 1,4-butanediol dimethacrylate, 1,6-hexanediol diacrylate, 1,9-nonanediol dimethacrylate, 1 , 10-Decandiol Dimethacrylate, Dimethyrol-Tricyclodecanediacrylate, Pentaerythritol Triacrylate, Pentaerythritol Tetraacrylate, Pentaerythritol Trimethacrylate, Pentaerythritol Tetramethacrylate, Dipentaerythritol Pentaacrylate, Dipentaerythritol Hexaacrylate, Tripenta Ellislitol heptaacrylate, trypentaerythritol octaacrylate, tetrapentaerythritol nonaacrylate, tetrapentaerythritol decaacrylate, pentapentaerythritol undecaacrylate, pentapentaerythritol dodecaacrylate, tripentaerythritol heptamethacrylate, tripentaerythritol octamethacrylate, tetrapentaerythritol Examples thereof include nona methacrylate, tetrapentaerythritol decamethacrylate, pentapentaerythritol undecamethacrylate, pentapentaerythritol dodecamethacrylate, dimethyrole-tricyclodecanediacrylate and the like. Two or more of these may be contained.

The content of the monomer in the wavelength conversion paste is preferably 1% by weight or more, more preferably 10% by weight or more, still more preferably 30% by weight or more in the solid content from the viewpoint of increasing the solid content ratio of the wavelength conversion paste. On the other hand, from the viewpoint of stabilizing the discharge from the nozzle, the content of the monomer is preferably 80% by weight or less, more preferably 70% by weight or less in the solid content.

The wavelength conversion paste may contain a polymerization initiator. By containing the polymerization initiator and the monomer, the polymerization initiator is reacted by light irradiation or heating, so that the polymerization of the monomer proceeds by the active species generated from the polymerization initiator, and the exposed portion of the wavelength conversion paste is exposed. Can be cured.

The polymerization initiator may be any radical initiator or cation initiator, that is, any one that reacts with light (including ultraviolet rays and electron beams) or heat to generate active species such as radicals and cations. good. Among these, a radical initiator is preferable. Examples of the polymerization initiator include 2-methyl- [4- (methylthio) phenyl] -2-morpholinopropane-1-one and 2-dimethylamino-2- (4-methylbenzyl) -1- (4-). Α-Aminoalkylphenone compounds such as morpholin-4-yl-phenyl) -butane-1-one, 2-benzyl-2-dimethylamino-1- (4-morpholinophenyl) -butanone-1; 2,4 , 6-trimethylbenzoylphenylphosphine oxide, bis (2,4,6-trimethylbenzoyl) -phenylphosphinoxide, bis (2,6-dimethoxybenzoyl)-(2,4,4-trimethylpentyl) -phosphinoxide, etc. Acylphosphine oxide compound; 1-phenyl-1,2-propanedione-2- (O-ethoxycarbonyl) oxime, 1- [4- (phenylthio) phenyl] octane-1,2-dione = 2- (O-benzoyl) Oxym)], 1-Phenyl-1,2-butadion-2- (O-methoxycarbonyl) oxime, 1,3-diphenylpropanthrion-2- (O-ethoxycarbonyl) oxime, Etanone, 1- [9-ethyl Oxyme ester compounds such as -6- (2-methylbenzoyl) -9H-carbazole-3-yl]-, 1- (O-acetyloxime); benzyl ketal compounds such as benzyl dimethyl ketal; 2-hydroxy-2-methyl -1-Phenylpropan-1-one, 1- (4-isopropylphenyl) -2-hydroxy-2-methylpropan-1-one, 4- (2-hydroxyethoxy) phenyl- (2-hydroxy-2-propyl) ) Ketones, α-hydroxyketone compounds such as 1-hydroxycyclohexyl-phenylketone; benzophenone, 4,4-bis (dimethylamino) benzophenone, 4,4-bis (diethylamino) benzophenone, methyl O-benzoylbenzoate, 4- Phenylbenzophenone, 4,4-dichlorobenzophenone, hydroxybenzophenone, 4-benzoyl-4'-methyl-diphenylsulfide, alkylated benzophenone, 3,3', 4,4'-tetra (t-butylperoxycarbonyl) benzophenone, etc. Phenylphenone compound; 2,2-diethoxyacetophenone, 2,3-diethoxyacetophenone, 4-t-butyldichloroacetophenone, benzalacetophenone, 4-azidobenzalacetopheno Acetphenone compounds such as 2-phenyl-2-oxyacetate compounds; ethyl 4-dimethylaminobenzoate, 4-dimethylaminobenzoic acid (2-ethyl) hexyl, ethyl 4-diethylaminobenzoate, Examples thereof include benzoic acid ester compounds such as 2-benzoyl methyl benzoate. Two or more of these may be contained.

The wavelength conversion paste contains 2,4,6-trimethylbenzoylphenylphosphine oxide, bis (2,4,6-trimethylbenzoyl) -phenylphosphine oxide, and bis (2,6-dimethoxy) in order to suppress coloration caused by the polymerization initiator. It is preferable to contain an acylphosphine oxide-based polymerization initiator such as benzoyl)-(2,4,4-trimethylpentyl) -phosphine oxide.

In the present invention, the content of the polymerization initiator in the wavelength conversion paste is preferably 0.01% by weight or more, preferably 0.1% by weight or more, based on the solid content, from the viewpoint of efficiently advancing the reaction by the polymerization initiator. More preferred. On the other hand, from the viewpoint of suppressing elution of the residual polymerization initiator and further improving yellowing, the content of the polymerization initiator is preferably 20% by weight or less, more preferably 10% by weight or less in the solid content.

The wavelength conversion paste may appropriately contain a polymer, a solvent, a dispersant and the like.

When the wavelength conversion paste contains a polymer, the polymer may be, for example, a silicon resin such as polyvinyl acetate, polyvinyl alcohol, ethyl cellulose, methyl cellulose, polyethylene, polymethyl siloxane or polymethyl phenyl siloxane, polystyrene, butadiene / styrene copolymer, polystyrene, etc. Preferred examples include polyvinylpyrrolidone, polyamide, high molecular weight polyether, copolymer of ethylene oxide and propylene oxide, polyacrylamide, acrylic resin and the like.

When the wavelength conversion paste contains a solvent, the solvent may be, for example, methanol, ethanol, propanol, isopropanol, butanol, isobutanol, t-butanol, pentanol, 4-methyl-2-pentanol, 3-methyl-2. -Alcohols such as butanol, 3-methyl-3-methoxy-1-butanol, diacetone alcohol; glycols such as ethylene glycol and propylene glycol; ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, propylene glycol monomethyl ether, propylene Ethers such as glycol monoethyl ether, propylene glycol monopropyl ether, propylene glycol monobutyl ether, propylene glycol mono-t-butyl ether, ethylene glycol dimethyl ether, ethylene glycol diethyl ether, ethylene glycol dibutyl ether, diethyl ether; methyl ethyl ketone, acetyl acetone, methyl Ketones such as propyl ketone, methyl butyl ketone, methyl isobutyl ketone, diisobutyl ketone, cyclopentanone, 2-heptanone; amides such as dimethylformamide and dimethylacetamide; ethyl acetate, propyl acetate, butyl acetate, isobutyl acetate and ethylene glycol Acetates such as monoethyl ether acetate, propylene glycol monomethyl ether acetate, 3-methoxybutyl acetate, 3-methyl-3-methoxybutyl acetate, methyl lactate, ethyl lactate, butyl lactate; aromatics such as toluene, xylene, hexane and cyclohexane. Group or aliphatic hydrocarbons; γ-butyrolactone, N-methyl-2-pyrrolidone, dimethylsulfoxide and the like are preferably mentioned.

The viscosity of the wavelength conversion paste is 1 sec ^-1 when measured by attaching the Plate P35 Ti L manufactured by the same company to a rheometer (HAAKE MARS; Thermo Fisher Scientific Co., Ltd.) and setting the gap to 200 μm. The viscosity at the shear rate of is preferably 1,000 to 500,000 mPa · s. By setting the viscosity to 1000 mPa · s or more, even when the paste is stored for a long period of time after preparation, particle components such as (B) light-scattering particles are less likely to settle. The viscosity is more preferably 3,000 mPa · s or more, and further preferably 5,000 mPa · s or more. Further, by setting the viscosity to 500,000 mPa · s or less, it becomes easy to stably discharge even when pressurized with compressed air at a low pressure. The viscosity is more preferably 400,000 mPa · s or less, and further preferably 300,000 mPa · s or less.

When the wavelength conversion paste contains a dispersant, the dispersant may be, for example, "Disperbyk" (registered trademark) 106, 108, 110, 180, 190, 2001, 2155, 140, 145 (hereinafter, trade name. Big Chemie). Co., Ltd.) and the like are preferable.

The wavelength conversion substrate of the present invention is preferably produced by applying a wavelength conversion paste to the substrate with a partition wall of the present invention by a nozzle coating method and curing the substrate.

Next, the display device of the present invention will be described. The display device of the present invention has the wavelength conversion substrate and a light source. As the light source, a light source selected from a blue OLED, a blue LED, and an ultraviolet light emitting LED capable of driving an active matrix is preferable.

The method for manufacturing the display device of the present invention will be described with reference to an example of the display having the wavelength conversion substrate and the blue OLED of the present invention. A photosensitive polyimide resin is applied onto a glass substrate having a TFT pattern capable of driving an active matrix, and an insulating film is formed by a photolithography method. After sputtering aluminum as the back electrode layer, patterning is performed by a photolithography method to form a back electrode layer in an opening without an insulating film. Subsequently, tris (8-quinolinolato) aluminum (hereinafter abbreviated as Alq ₃ ) was formed as an electron transport layer by a vacuum vapor deposition method, and then dicyanomethylenepyran, quinacridone, and 4,4'-bis were formed on Alq ₃ as a light emitting layer. (2,2-Diphenylvinyl) A white light emitting layer doped with biphenyl is formed. Next, N, N'-diphenyl-N, N'-bis (α-naphthyl) -1,1'-biphenyl-4,4'-diamine is formed as a hole transport layer by a vacuum vapor deposition method. Finally, ITO is formed into a film by sputtering as a transparent electrode to produce an OLED having a blue light emitting layer. A display can be manufactured by adhering the OLED thus obtained to face the above-mentioned wavelength conversion substrate with a sealing agent.

The wavelength conversion board itself of the present invention may have an OLED or an LED. In this case, a display can be manufactured by sequentially forming a partition wall and a wavelength conversion layer on a substrate having an OLED or an LED.

The present invention will be described in more detail below with reference to Examples and Comparative Examples, but the present invention is not construed as being limited to these specific examples.

(Analysis method of polysiloxane solution)
The solid content concentration of the polysiloxane solution was determined by the following method. 1.5 g of the polysiloxane solution was weighed in an aluminum cup and heated at 250 ° C. for 30 minutes using a hot plate to evaporate the liquid. The weight of the solid content remaining in the aluminum cup after heating was weighed, and the solid content concentration of the polysiloxane solution was determined from the ratio to the weight before heating.

The weight average molecular weight of polysiloxane was determined by the following method. Using a gel permeation chromatography (GPC) device (HLC-8220; manufactured by Toso Co., Ltd.) and using tetrahydrofuran as a fluidized layer, "JIS K 7252-3 (established date: March 20, 2008). GPC analysis was performed based on "day)", and the polystyrene-equivalent weight average molecular weight was measured.

The content ratio of each repeating unit in polysiloxane was determined by the following method. A polysiloxane solution is injected into a 10 mm diameter "Teflon"® sample tube and ²⁹ Si-NMR (Nuclear Magnetic Resonance) measurements are performed to give a specific organosilane to the integrated value of the entire silicon derived from the organosilane. The content ratio of each repeating unit was calculated from the ratio of the integrated value of silicon derived from. ²⁹ Si-NMR measurement conditions are shown below.
Device: Nuclear magnetic resonance device (JNM-GX270, manufactured by JEOL Ltd.)
Measurement method: Gated decoupling method Measurement nucleus frequency: 53.6693 MHz (29Si nucleus)
Spectral width: 20000Hz
Pulse width: 12 μs (45 ° pulse)
Pulse repetition time: 30.0 seconds Solvent: Acetone-d6
Reference substance: Tetramethylsilane Measurement temperature: 23 ° C
Sample rotation speed: 0.0 Hz.

(Preparation of polysiloxane solution)
147.32 g (0.675 mol) of trifluoropropyltrimethoxysilane, 40.66 g (0.175 mol) of 3-methacryloxypropylmethyldimethoxysilane, 3-trimethoxysilylpropylsuccinic acid anhydride in a 1000 mL three-mouthed flask. 26.23 g (0.10 mol), 3- (3,4-epoxycyclohexyl) propyltrimethoxysilane 12.32 g (0.05 mol), dibutylhydroxytoluene (BHT) 0.808 g, propylene glycol monomethyl ether acetate. 171.62 g of (PGMEA) was charged, and an aqueous phosphoric acid solution prepared by dissolving 2.265 g of phosphoric acid (1.0% by weight based on the charged monomer) in 52.65 g of water was added over 30 minutes while stirring at room temperature. Then, the flask was immersed in an oil bath at 70 ° C. and stirred for 90 minutes, and then the temperature of the oil bath was raised to 115 ° C. over 30 minutes. One hour after the start of temperature rise, the solution temperature (internal temperature) reached 100 ° C., and the mixture was heated and stirred for 2 hours (internal temperature was 100 to 110 ° C.) to obtain a polysiloxane solution. During the temperature rise and heating and stirring, a mixed gas of 95% by volume of nitrogen and 5% by volume of oxygen was flowed at 0.05 L / fraction. A total of 131.35 g of methanol and water, which are by-products, were distilled off during the reaction. PGMEA was added to the obtained polysiloxane solution so that the solid content concentration was 40% by weight to obtain a polysiloxane solution (polysiloxane solution A). The weight average molecular weight of the obtained polysiloxane was 4,000. It is also derived from trifluoropropyltrimethoxysilane, 3-methacryloxypropylmethyldimethoxysilane, 3-trimethoxysilylpropylsuccinic acid anhydride, and 3- (3,4-epoxycyclohexyl) propyltrimethoxysilane in polysiloxane. The molar ratio of the repeating unit was 67.5 mol%, 17.5 mol%, 10 mol% and 5 mol%, respectively.

(Preparation of resin composition for partition wall)
Using a mill-type disperser in which 5.00 g of titanium dioxide pigment (R-960, manufactured by BASF Japan Ltd.) was mixed with 5.00 g of polysiloxane solution A as a resin as a white pigment and filled with zirconia beads. It was dispersed to obtain a pigment dispersion. Next, 9.98 g of the pigment dispersion, 0.71 g of DAA, 1.57 g of the polysiloxane solution A, and as a photopolymerization initiator, ethylene, 1- [9-ethyl-6- (2-methylbenzoyl) -9H-carbazole. -3-yl]-, 1- (О-acetyloxime) (manufactured by BASF Japan Co., Ltd.) 0.050 g, bis (2,4,6-trimethylbenzoyl) -phenylphosphine oxide (manufactured by BASF Japan Co., Ltd.) ) 0.400 g, as a photobase generator, 2- (3-benzoylphenyl) propionic acid 1,2-diisopropyl-3- [bis (dimethylamino) methylene] guanidinium (manufactured by Fujifilm Wako Pure Chemical Industries, Ltd.) 0 .100 g, dipentaerythritol hexaacrylate (manufactured by Shin Nihon Yakuhin Co., Ltd.) 1.20 g as a photopolymerizable compound, photopolymerizable fluorine-containing compound as a liquid repellent compound (“Megafuck” (registered trademark) RS- 76-E, 40 wt% PGMEA diluted solution of DIC Co., Ltd. 1.00 g, 3', 4'-epoxycyclohexylmethyl-3,4-epoxycyclohexanecarboxylate (manufactured by Daicel Co., Ltd.) 0.100 g, Ethylene bis (oxyethylene) bis [3- (5-tert-butyl-4-hydroxy-m-tolyl) propionate] (manufactured by BASF Japan Co., Ltd.) 0.030 g, acrylic surfactant ("BYK" (registered) 0.100 g of a 10 wt% diluted solution of PGMEA (corresponding to a concentration of 500 ppm) of 352, manufactured by Big Chemie Japan Co., Ltd. was dissolved in 4.76 g of PGMEA and stirred. Then, filtration was performed with a 5.0 μm filter to obtain a resin composition for a partition wall.

(Measuring method of average particle size of light-scattering particles)
Light-scattering particles were placed in a water-filled sample chamber of a particle size distribution measuring device (MT3300; manufactured by Nikkiso Co., Ltd.), ultrasonically treated for 300 seconds, and then the particle size distribution was measured. The particle size (d50) to be% was taken as the average particle size.

(Raw material for wavelength conversion paste)
The raw materials used to prepare the wavelength conversion paste are as follows.
Light-scattering particles 1: AA-1.5 (alumina, average particle size 1.6 μm, manufactured by Sumitomo Chemical Co., Ltd.)
Wavelength conversion material 1: Lumidot 530 CdSe (green quantum dot material, manufactured by Sigma-Aldrich)
Wavelength conversion material 2: Lumidot 640 CdSe (red quantum dot material, manufactured by Sigma-Aldrich)
Photopolymerization Initiator 1: "Irgacure" (registered trademark) OXE01 (manufactured by BASF Japan Ltd.)
Monomer 1: NK-9PG (polypropylene glycol # 400 dimethacrylate, which is a bifunctional methacrylate) (manufactured by Shin Nakamura Chemical Industry Co., Ltd.)
Polymer 1: "Etocell" (registered trademark) STD7 (I) (cellulose ethyl ether) (manufactured by DDP Specialty Products Japan Co., Ltd.)
Solvent 1: Propylene glycol methyl ether acetate (manufactured by Wako Pure Chemical Industries, Ltd.)
(Preparation of wavelength conversion paste)
25 parts by weight of light-scattering

particles

1, 5 parts by weight of wavelength conversion material 1, 0.1 parts by weight of photopolymerization initiator, 34.9 parts by weight of

monomer

1, 15 parts by weight of

polymer

1, and 20 parts by weight of solvent. After partial weighing, kneading with a 3-roller kneader, filtering with an SHP-400 filter (manufactured by Loki Techno Co., Ltd.) while applying a pressure of 100 to 400 kPa with air to obtain a wavelength conversion paste for green subpixels. rice field. Further, a wavelength conversion paste for red subpixels was obtained in the same manner except that the wavelength conversion material 1 was replaced with the wavelength conversion material 2. Further, a light scattering paste for blue subpixels was obtained in the same manner except that the wavelength conversion material 1 was not added.

(Manufacturing of substrate with partition wall)
A resin composition for partition walls was spin-coated on a 10 cm square non-alkali glass substrate (made by AGC Technoglass Co., Ltd., thickness 0.7 mm) and hot plate (SCW-636, manufactured by SCREEN Semiconductor Solutions Co., Ltd.). ) Was dried at a temperature of 90 ° C. for 2 minutes to prepare a dry film. The prepared dry film was formed into the partition wall shapes of Examples 1 to 17 and Comparative Examples 1 to 4, which will be described later, using a parallel light mask aligner (PLA-501F, manufactured by Canon Inc.) and using an ultrahigh pressure mercury lamp as a light source. Exposure was performed with an exposure amount of 200 mJ / cm ² (i-line) via a corresponding photomask. Then, using an automatic developing device (AD-2000, manufactured by Takizawa Sangyo Co., Ltd.), shower development was performed for 100 seconds with a 0.045 wt% potassium hydroxide aqueous solution, and then rinsing was performed with water for 30 seconds. Further, using an oven (IHPS-222, manufactured by Espec Co., Ltd.), it is heated in air at a temperature of 230 ° C. for 30 minutes, and a pattern is formed on a glass substrate in the shape of FIGS. 2 to 22 having a height of 20 μm. A substrate with a partition wall was produced. The outline of the shape and arrangement of the partition walls (including the frame portion) in the partition wall-equipped substrate used in each Example and Comparative Example is as follows.

Example 1: FIG. 5
Example 2: FIG.
Example 3: FIG.
Example 4: FIG. 9
Example 5: FIG. 10
Example 6: FIG. 11
Example 7: FIG. 12
Example 8: FIG. 13
Example 9: FIG. 14
Example 10: FIG.
Example 11: FIG.
Example 12: FIG. 17
Example 13: FIG.
Example 14: FIG. 19
Example 15: FIG. 20
Example 16: FIG. 21
Example 17: FIG. 22
Comparative Example 1: FIG. 2
Comparative Example 2: FIG. 3
Comparative Example 3: FIG. 4
Comparative Example 4: FIG. 7
(Evaluation method of partition wall pattern size and frame size)
The prepared substrate with a partition wall was photographed with an optical microscope image from the top surface using a laser microscope (color 3D laser microscope VK-9710, manufactured by KEYENCE CORPORATION) in the camera mode, and in Examples 1 to 17 and Comparative Examples 1 to 4. _WA , _LA , _LB , SR, _SG , SB, _WF , WF _MAX , _WF _MIN , _LF , L _FO , L _BF , _S _F , _HF , _HD , LD ₁ , L _D2 and L _D3 were measured with the attached software. Further, _WF _MAX was set to the maximum value of WF, and _{WF MIN} was set to the minimum value of _WF . Further, the minimum value _SRGB _MIN was obtained from the measured SR, _SG , and _SB . When determining the area, the height of the partition wall in which the connected buffer or the stand-alone buffer is connected to the cell or the non-pixel portion and forms the frame portion corresponding to the connected buffer or the stand-alone buffer is zero. In the case of, the line segment connecting the ends of the frame portion on the connected cell side or the non-pixel portion side was regarded as the boundary of the connected buffer portion or the stand-alone buffer portion.

(Evaluation method of partition wall pattern workability)
The shape of the partition wall of the prepared substrate with a partition wall was observed with an optical microscope, and the number of defects such as chips was measured. The ratio of the number of partition wall lattices with defects to the total number of lattices was A, 1% or more and less than 10% was B, and 10% or more was C. A to B are pass levels, A is the best, and B is the next best.

(Evaluation method of monochromatic pixel film thickness variation)
A wavelength conversion paste is applied to the substrates with partition walls of Examples 1 to 17 and Comparative Examples 1 to 4 by the following method, and then the applied paste is dried and cured, and then a laser microscope (color 3D laser microscope VK-9710) is applied. , (Manufactured by KEYENCE CORPORATION), an optical microscope image was taken from the top surface in camera mode, and the film thickness at the center of the cell was measured. As the coating head, one having 51 discharge ports having a discharge port diameter of 50 μm and a discharge port length of 130 μm arranged at a pitch of 300 μm in the longitudinal direction of the coating head was used. As a coating device, a multi-lab coater (manufactured by Toray Engineering Co., Ltd.) is used so that the discharge port at the left end of the nozzle is on a straight line 0.5 cm from the left end of the partition wall constituting the cell to be filled. After aligning the positions and aligning the traveling direction of the nozzle so that the nozzle is swept along the stripe, a pressure of 500 to 1,500 kPa is applied to the coating head by air, and the traveling speed with respect to the substrate is 20 to 200 mm. Wavelength conversion for green subpixels is performed by applying a nozzle to the substrate with a partition wall in a direction parallel to the long side direction of the partition wall while ejecting the wavelength conversion paste for green subpixels while changing the wavelength within the range of / s. Filled with paste. Next, by shifting the base position by 100 μm in the direction perpendicular to the stripe of the partition wall, applying in the same manner, and further shifting by 100 μm and applying in the same manner again, the entire range of 7 cm in length and 1.5 cm in width is applied. A wavelength conversion paste for green subpixels was applied to the cells. Next, move the base position to the right by 1.5 cm in the direction parallel to the stripe of the partition wall and repeat the same work three times, and apply the wavelength conversion paste for green subpixels in the range of 7 cm x 6 cm. It was applied to the front opening. Then, it was dried on a hot plate at 100 ° C. for 10 minutes, and further exposed to an exposure amount of 200 mJ / cm ² (i-line) with an ultra-high pressure mercury lamp under a nitrogen atmosphere and cured to form a wavelength conversion layer. At this time, the pressure and the traveling speed at the time of coating were adjusted so that the thickness of the wavelength conversion layer was 20 μm in the central portion of the unit cell.

The wavelength conversion substrate produced by the above method was observed with a laser microscope, and the RGB pixel film thickness was evaluated. The maximum value in any color pixel is the minimum in the film thickness of each subpixel of continuous RGB pixels at the coating start position in the center of the partition pattern and the film thickness of each continuous subpixel in the center of coating in the center of the partition pattern. The film thickness of pixels of the same color is defined as D when it is 20% or more thicker than the value, C when it is 15% or more and less than 20% thick, B when it is 10% or more and less than 15% thick, and A when it is less than 10% thick. Was compared. When the difference in film thickness is large, the change in emission luminance and chromaticity when the wavelength conversion layer is made to emit light is visually recognized as unevenness, so the one having a small difference in thickness is preferable.

(Evaluation method of display characteristics)
The wavelength conversion substrates obtained in each Example and Comparative Example were irradiated with blue light to evaluate the display characteristics. As the blue light source, a blue backlight light source for LCD taken out by disassembling a commercially available liquid crystal monitor (SW2700PT, manufactured by BenQ) was used.
The display characteristics were evaluated based on the following criteria.
A: The display brightness is uniform in the plane, there are no defects, and the display quality is high.
B: There is slight display unevenness to the extent that it cannot be discriminated without paying close attention to the inner peripheral portion of the display surface, but the brightness is uniform in the surface and the display quality is high.
C: The display quality is low due to visible display unevenness on the inner peripheral portion of the display surface.
D: There is clearly visible display unevenness in the inner peripheral portion of the display surface, there is a difference in brightness between the in-plane central portion and the outer peripheral portion, and the display quality is extremely low.

(Evaluation method of cutting accuracy)
The wavelength conversion substrate obtained in each Example and Comparative Example was cut into a frame portion by a scribing device (MTC series, manufactured by Samsung Diamond Industrial Co., Ltd.), and the cutting accuracy was evaluated. The substrate after cutting the scribing was photographed with an optical microscope image from the top surface with a laser microscope (color 3D laser microscope VK-9710, manufactured by KEYENCE CORPORATION) in camera mode, and evaluated based on the following criteria.
A: It is divided at the frame portion, there is no local division, cracks, cracks, etc. in the pixel portion, and there are no defects such as peeling or partial defects in the partition wall of the lattice portion and the frame portion.
B: It is divided at the frame portion, and there are no local divisions, cracks, cracks, etc. in the pixel portion, but there are defects such as peeling and partial defects in the partition wall of the lattice portion and the frame portion.
C: Although it is divided at the frame portion, there are local divisions, cracks, cracks, etc. at the pixel portion.
D: Locally or entirely, it is divided outside the frame.

The evaluation results are shown in Table 1.

The first embodiment has good display characteristics because it has an area connecting the cell and the non-pixel portion, and the second embodiment has an area connecting the cell and the non-pixel portion, and the area of the cell in the frame portion is the embodiment. Since it is larger than 1, the variation in the film thickness of the monochromatic pixel is improved and the display characteristics are further improved. In Comparative Example 1 with respect to Examples 1 and 2, since there is no region connecting the cell and the non-pixel portion in the frame portion and there is no buffer portion in the frame portion, the monochromatic pixel film thickness variation is large and the display characteristics are improved. It was bad. Further, in Comparative Example 2 and Comparative Example 3, although the variation in the film thickness of the monochromatic pixel was low, the partition wall was peeled off at the time of pattern processing because the frame portion was not present, and the display characteristics were remarkably inferior.

In Examples 3 to 6, the area of the stand-alone buffer portion is large and the display characteristics are good because the single-color pixel film thickness variation is good, whereas in Comparative Example 4, the stand-alone buffer portion is provided, but the area thereof is good. Was small, the single-color pixel film thickness variation was large, and the display characteristics were poor.

Since Examples 7 and 8 have a connection type shock absorber and have a large area thereof with a partition wall, the display characteristics are better.

Since Example 9 has a connection type buffer portion and a split groove portion as in Example 1, not only the display characteristics are good, but also the split accuracy is also good.

Further, in Examples 10 to 15, the display characteristics are good as in Example 1, the film thickness of the split groove portion is extremely thin, or the split groove portion is provided in contact with the connection type buffer portion. Therefore, the cutting accuracy was even better than that of Example 9.

Further, since the 16th embodiment has the groove portion for cutting in addition to having the independent cushioning portion as in the 4th embodiment, not only the display characteristics are good but also the cutting accuracy is good. The breaking accuracy of Example 17 was even better than that of Example 16.

1 Coating head 2 Paste 3 Substrate 4 Pressurized pipe 5 Discharge hole 6 Partition 7 Opening, Cell 8 Partition pattern 9 Frame 10 RGB pixel

10R Red pixel

10G Green pixel

10B Blue pixel 12 Non-pixel 13 Connection type buffer 14 Stand-alone cushioning part 15 Fracting groove part 20 Frame upper end part 21 Fracting groove upper end part 22 Fracting groove lower end part

Claims

A substrate with a partition wall having a substrate and a partition wall formed on the substrate, wherein the cells partitioned by the partition wall have a region arranged in a grid pattern and form an outer edge of the region. Alternatively, the outermost partition wall formed so as to surround the region has a width wider than the width of the partition wall forming other than the outer edge of the region and intersects on an extension of the row of the grid array. A partition wall having a portion lower in height than the other portion on at least one side, and the portion lower in height than the other portion satisfies the following (1) or (2). With board.
(1) When connected to a cell, the width at the connection part is narrower than the width of the cell. (2) When not connected to a cell, it is larger than the area of the nearest cell. Being an area
In the substrate with a partition wall satisfying the above (2), the maximum width of the portion having a lower height than the other part of the partition wall located on the outermost side corresponds to the portion having a height lower than the other part showing the maximum width. The substrate with a partition wall according to claim 1, wherein the width of the partition wall located on the outer side is 98% or less.
In the outermost partition wall, a portion in the partition wall in which a portion having a height lower than that of other portions is present at 50% or more in a direction orthogonal to the extension line of the row of the grid-like arrangement. The claim is characterized in that the width of a portion having 50% or more of a portion having a height lower than that of the other portion is 20% or less of the width of the partition wall in which the portion exists. The substrate with a partition wall according to 1 or 2.
A wavelength conversion substrate in which a material for converting the wavelength of an electromagnetic wave into another wavelength is filled in the cells arranged in a grid pattern of the substrate with a partition wall according to any one of claims 1 to 3.
A display device including the wavelength conversion substrate according to claim 4 and / or an organic light emitting diode and / or a light emitting diode.
The display device according to claim 5, wherein a quantum dot phosphor is used as a material for converting the wavelength of the electromagnetic wave into another wavelength.
The display device according to claim 5 or 6, wherein an inorganic phosphor is used as a material for converting the wavelength of the electromagnetic wave into another wavelength.
The method for manufacturing a wavelength conversion substrate, which comprises a step of ejecting a material for converting the wavelength of an electromagnetic wave into another wavelength from a nozzle and applying the substrate to the substrate with a partition wall according to any one of claims 1 to 3. A method for manufacturing a wavelength conversion substrate, wherein the coating is performed so as to pass through the portion of the substrate with a partition wall from the side of the partition wall located on the outermost side where a portion having a height lower than that of the other portion is present.