WO2022138155A1 - Method for forming insulating film and device for treating insulating film - Google Patents

Abstract

The method for forming an insulating film containing nitrogen and/or carbon according to one mode of the present disclosure is a method for forming an insulating film containing nitrogen and/or carbon in a recessed portion formed in the surface of a substrate. The method comprises: (a) a step for forming a fluidic film in the recessed portion by feeding, to the substrate adjusted to a first temperature, a treatment gas containing a precursor gas and a reducing gas and by activating the treatment gas with plasma, and (b) a step for curing the fluidic film by a heating the substrate at a second temperature higher than the first temperature. The precursor gas is a linear non-symmetric organic molecule having an XHx(NzCnHm)y structure (X represents Si or a metal element, n, m, x, and y represent a natural number of at least 1, and z represents 0 or 1).

Description

Insulating film forming method and processing equipment

This disclosure relates to an insulating film forming method and a processing device.

In the semiconductor manufacturing process, it is required to embed a film in a recess having a high aspect ratio without voids or seams as the structure becomes finer.

As an example of the embedding process, a technique of embedding a film from the bottom of a recess from the bottom of the recess by alternately repeating deposition and etching is known (see, for example, Patent Document 1). As another example of the embedding process, a fluid film is formed by PECVD, the fluid film is treated to form a Si—X film (X = C, O, or N), and the fluid film is formed. Alternatively, a technique of curing a Si—X film to solidify the film is known (see, for example, Patent Document 2).

Japanese Unexamined Patent Publication No. 2014-112668 Japanese Patent Publication No. 2020-516079

The present disclosure provides a technique capable of embedding a dense nitrogen and / or carbon-containing insulating film in a recess.

The method for forming an insulating film containing nitrogen and / or carbon according to one aspect of the present disclosure is a method for forming an insulating film containing nitrogen and / or carbon in a recess formed on the surface of a substrate (a). ) A step of forming a fluid film in the recess by activating and supplying a processing gas containing a precursor gas and a reducing gas to the substrate adjusted to the first temperature by plasma, and (b) the substrate. It comprises a step of curing the fluid film by heat treatment at a second temperature higher than the first temperature, and the precursor gas is XH _x (N _z C _n H _m ) _y (X is). It is a Si or a metal element, n, m, x, y are natural numbers of 1 or more, and z is 0 or 1.) It is a linear asymmetric organic molecule having a structure.

According to the present disclosure, an insulating film containing dense nitrogen and / or carbon can be embedded in the recess.

A flowchart showing an example of a method for forming a silicon nitride film according to an embodiment. The figure for demonstrating the reaction mechanism of the silicon nitride film formation method of an embodiment. The figure for demonstrating the reaction mechanism of the silicon nitride film formation method of an embodiment. The figure for demonstrating the reaction mechanism of the silicon nitride film formation method of an embodiment. The figure which shows an example of the processing apparatus which carries out the method of forming the silicon nitride film of an embodiment. The figure which shows the result of observing the embedding property of the silicon nitride film embedded in the recess.

Hereinafter, non-limiting exemplary embodiments of the present disclosure will be described with reference to the accompanying drawings. In all the attached drawings, the same or corresponding members or parts are designated by the same or corresponding reference numerals, and duplicate description is omitted.

[Method of forming a silicon nitride film]
With reference to FIGS. 1 to 4, a method for forming a silicon nitride film will be described as an example of a method for forming an insulating film containing nitrogen and / or carbon. Hereinafter, a method of embedding a silicon nitride film in a recess formed on the surface of a substrate will be described as an example.

As shown in FIG. 1, the method for forming a silicon nitride film of the embodiment includes a step S1 for preparing a substrate, a step S2 for forming a fluid film, and a step S3 for curing the fluid film.

In the step S1 of preparing the substrate, a substrate having a recess formed on the surface is prepared. The substrate may be, for example, a semiconductor wafer. The recess may be, for example, a trench or a hole.

In the step S2 for forming the fluid film, the fluid film is formed in the recesses by activating and supplying the processing gas containing the precursor gas and the reducing gas to the substrate adjusted to the first temperature by plasma. ..

In the present embodiment, the precursor gas is a linear asymmetric aminosilane molecule having a SiH _x (NC _n Hm) _y (n, _m , x, y are natural numbers of 1 or more). Examples of the linear asymmetric aminosilane molecule include Vista Shaributylaminosilane (BTBAS), bisdiethylaminosilane (BDEAS), trisdimethylaminosilane (3DMAS), and bisethylmethylaminosilane (BESAS) represented by the following structural formulas.

The linear asymmetric aminosilane molecule having a SiH _x (NC _{nHm ) y} structure has a linear structure and a structure in which the bonds surrounding Si are asymmetric and the dipole moment is large. The linear asymmetric aminosilane molecule is electrically activated by plasma and deposited on a substrate regulated to a first temperature. At this time, the _CnHm organic group present _at the end of the linear asymmetric aminosilane molecule functions to inhibit the bond with the adjacent molecule and maintain the fluidity. Therefore, since the fluid film is formed so as to flow into the concave portion, it can be embedded in the microstructure. Further, since the C _n H _m organic group has high stability, the fluidity is maintained even after being embedded in the recess.

For example, when BTBAS is used as the precursor gas, plasma polymerization occurs between adjacent BTBAS molecules as shown in FIG. 2, and then further plasma occurs between the molecules generated by plasma polymerization as shown in FIG. Polymerization occurs and oligomers are produced.

The reducing gas may be a gas containing hydrogen and / or nitrogen, for example, hydrogen (H ₂ ) gas, nitrogen (N ₂ ) gas, ammonia (NH ₃ ) gas, hydrazine (N ₂ H ₄ ) gas and the like. Combinations and the like can be mentioned. The reducing gas is not limited to these. Further, the treatment gas may contain an additive gas, and examples of the additive gas include an inert gas such as nitrogen (N ₂ ) gas, helium (He), and argon (Ar).

The first temperature is a temperature at which a fluidized film is formed in the recesses when a processing gas containing a precursor gas and a reducing gas is supplied to the substrate, and may be, for example, 80 ° C. or lower. The plasma may be, for example, capacitively coupled plasma, inductively coupled plasma, microwave plasma.

Further, in the step S2 for forming the fluid film, monosilane (SiH ₄ ) gas and disilane (Si ₂ H ₆ ) gas may be added as the treatment gas. This makes it possible to change the ratio of Si contained in the silicon nitride film embedded in the recess.

In the step S3 of curing the fluid film, the substrate having the fluid film formed in the recesses is heat-treated at a second temperature higher than the first temperature to cure the fluid film and form a silicon nitride film. .. At this time, solidification occurs by a condensation reaction between the H group bonded to Si and the amino group between the molecules constituting the fluid film, and a non-porous and dense silicon nitride film is formed.

For example, when BTBAS is used as the precursor gas, as shown in FIG. 4, a condensation reaction occurs between adjacent oligomers, the fluid film is cured, and a silicon nitride film is formed.

The second temperature is a temperature at which the fluidized membrane can be cured, and may be, for example, 150 ° C. or higher and 750 ° C. or lower.

In the present embodiment, the step S3 for curing the fluid film is carried out after the step S2 for forming the fluid film without exposing the substrate to the atmosphere. That is, the step S2 for forming the fluid film and the step S3 for curing the fluid film are continuously performed in a vacuum atmosphere.

Further, it is preferable that the step S3 for curing the fluid film is carried out in a short time (for example, within 60 seconds) after the step S2 for forming the fluid film. Thereby, in the step S2 for forming the fluid film, the fluid film can be solidified by the condensation reaction while the fluid film embedded in the recesses maintains the fluidity. As a result, a non-porous and dense film is formed.

Further, in the step S3 of curing the fluid film, it is preferable to expose the substrate to hydrogen plasma. By exposing the substrate to hydrogen plasma, the fluid membrane can be cured while removing impurities contained in the fluid membrane. Therefore, the concentration of impurities in the silicon nitride film embedded in the recess can be reduced. The hydrogen plasma may be, for example, a plasma using a VHF wave of 100 MHz to 1 GHz.

[Processing equipment]
With reference to FIG. 5, an example of a processing apparatus (membrane forming portion) for carrying out the above-mentioned step S2 for forming a fluid film will be described. The processing device (heat treatment unit) that carries out the step S3 for curing the fluid film may have the same configuration as the processing device that carries out the step S2 for forming the fluid film.

As shown in FIG. 5, the processing apparatus 1 uses a plasma-based chemical vapor deposition (CVD) method to silicon nitride a semiconductor wafer (hereinafter referred to as “wafer W”), which is an example of a substrate. It is a device that forms a film. The processing device 1 includes a substantially cylindrical airtight processing container 2. An exhaust chamber 21 is provided in the central portion of the bottom wall of the processing container 2.

The exhaust chamber 21 has, for example, a substantially cylindrical shape that protrudes downward. An exhaust flow path 22 is connected to the exhaust chamber 21, for example, on the side surface of the exhaust chamber 21.

The exhaust section 24 is connected to the exhaust flow path 22 via the pressure adjusting section 23. The pressure adjusting unit 23 includes a pressure adjusting valve such as a butterfly valve. The exhaust flow path 22 is configured so that the inside of the processing container 2 can be depressurized by the exhaust unit 24. A transport port 25 is provided on the side surface of the processing container 2. The transport port 25 is configured to be openable and closable by a gate valve 26. The loading and unloading of the wafer W between the inside of the processing container 2 and the transport chamber (not shown) is performed via the transport port 25.

A mounting table 3 for holding the wafer W substantially horizontally is provided in the processing container 2. The mounting table 3 is formed in a substantially circular shape in a plan view, and is supported by a support member 31. On the surface of the mounting table 3, for example, a substantially circular recess 32 for mounting a wafer W having a diameter of 300 mm is formed. The recess 32 has an inner diameter slightly larger than the diameter of the wafer W (for example, about 1 mm to 4 mm). The depth of the recess 32 is configured to be substantially the same as the thickness of the wafer W, for example. The mounting table 3 is made of a ceramic material such as aluminum nitride (AlN). Further, the mounting table 3 may be formed of a metal material such as nickel (Ni). Instead of the recess 32, a guide ring for guiding the wafer W may be provided on the peripheral edge of the surface of the mounting table 3.

For example, a grounded lower electrode 33 is embedded in the mounting table 3. A temperature control mechanism 34 is embedded below the lower electrode 33. The temperature control mechanism 34 sets the wafer W mounted on the mounting table 3 at a set temperature (for example, a temperature of −50 ° C. to 80 ° C., and for a mounting table for heat treatment, for example, 150 ° C., based on a control signal from the control unit 9. Adjust to a temperature of ~ 750 ° C.). When the entire mounting table 3 is made of metal, the entire mounting table 3 functions as a lower electrode, so that the lower electrode 33 does not have to be embedded in the mounting table 3. The mounting table 3 is provided with a plurality of (for example, three) lifting pins 41 for holding and raising and lowering the wafer W mounted on the mounting table 3. The material of the elevating pin 41 may be, for example, ceramics such as alumina (Al ₂ O ₃ ), quartz, or the like. The lower end of the elevating pin 41 is attached to the support plate 42. The support plate 42 is connected to an elevating mechanism 44 provided outside the processing container 2 via an elevating shaft 43.

The elevating mechanism 44 is installed, for example, at the lower part of the exhaust chamber 21. The bellows 45 is provided between the opening 211 for the elevating shaft 43 formed on the lower surface of the exhaust chamber 21 and the elevating mechanism 44. The shape of the support plate 42 may be a shape that can be raised and lowered without interfering with the support member 31 of the mounting table 3. The elevating pin 41 is vertically configured by the elevating mechanism 44 between the upper side of the surface of the mounting table 3 and the lower side of the surface of the mounting table 3. In other words, the elevating pin 41 is configured to be able to project from the upper surface of the mounting table 3.

The top wall 27 of the processing container 2 is provided with a gas supply unit 5 via an insulating member 28. The gas supply unit 5 forms an upper electrode and faces the lower electrode 33. An RF power supply 51 is connected to the gas supply unit 5 via a matching unit 511. The frequency of the RF power supply 51 is, for example, 450 kHz to 2.45 GHz. By supplying RF power from the RF power supply 51 to the upper electrode (gas supply unit 5), an RF electric field is generated between the upper electrode (gas supply unit 5) and the lower electrode 33. The gas supply unit 5 includes a hollow gas diffusion chamber 52. On the lower surface of the gas diffusion chamber 52, for example, a large number of holes 53 for dispersing and supplying the processing gas into the processing container 2 are evenly arranged. A heating mechanism 54 is embedded above, for example, the gas diffusion chamber 52 in the gas supply unit 5. The heating mechanism 54 is heated to a set temperature by supplying power from a power supply unit (not shown) based on a control signal from the control unit 9.

The gas diffusion chamber 52 is provided with a gas supply path 6. The gas supply path 6 communicates with the gas diffusion chamber 52. A gas source 61 is connected to the upstream side of the gas supply path 6 via a gas line 62. The gas source 61 includes, for example, various processing gas supply sources, a mass flow controller, and valves (none of which are shown). The various treatment gases include a precursor gas and a reducing gas used in the above-mentioned method for forming a silicon nitride film. Further, the various treatment gases may contain an additive gas such as a monosilane gas or a disilane gas. Various treated gases are introduced from the gas source 61 into the gas diffusion chamber 52 via the gas line 62.

The processing device 1 includes a control unit 9. The control unit 9 is, for example, a computer, and includes a CPU (Central Processing Unit), a RAM (RandomAccessMemory), a ROM (ReadOnlyMemory), an auxiliary storage device, and the like. The CPU operates based on a program stored in the ROM or the auxiliary storage device, and controls the operation of the processing device 1. The control unit 9 may be provided inside the processing device 1 or may be provided outside. When the control unit 9 is provided outside the processing device 1, the control unit 9 can control the processing device 1 by a communication means such as wired or wireless.

〔Example〕
In Example 1, first, a wafer W having a concave portion having an aspect ratio smaller than 1 formed on the surface was prepared. Subsequently, in the processing apparatus 1, with the wafer W mounted on the mounting table 3, the processing gas containing the precursor gas and the reducing gas is supplied from the gas supply unit 5 into the processing container 2, and the RF power source 51 is used. RF power was supplied from the upper electrode to the wafer W to form a fluid film. Subsequently, the wafer W on which the fluidized film was formed was conveyed to another processing apparatus 1 in a vacuum atmosphere. Subsequently, in the processing apparatus 1, the wafer W is heat-treated at 450 ° C. in a state where the wafer W is placed on the mounting table 3 in the processing container 2 having an _N2 gas atmosphere to cure the fluid film. A silicon nitride film was formed. The heat treatment on the wafer W was started 1 minute (60 seconds) after the formation of the fluid film on the wafer W was completed. Subsequently, the embedding property of the silicon nitride film embedded in the recess was observed with a scanning electron microscope (SEM).

The film forming conditions of the fluid film in Example 1 are as follows.
-Precursor gas: BTBAS (50 sccm)
-Reducing gas: NH ₃ (50 sccm)
-Additional gas: H ₂ (50 sccm), He (50 sccm)
-Pressure: 4Torr (533Pa)
・ RF power: 13.56MHz, 100W
・ Wafer temperature: 0 ° C

In Example 2, a wafer W having a concave portion having an aspect ratio larger than 5 formed on the surface is prepared, a fluid film is formed on the wafer W under the same conditions as in Example 1, and then the fluid film is cured. A silicon nitride film was formed. Subsequently, the embedding property of the silicon nitride film embedded in the recess was observed by SEM.

In Comparative Example 1, the time from the completion of the formation of the fluidized film on the wafer W to the start of the heat treatment for the fluidized film is set to 1 hour, and other conditions are the same as in Example 1. Under the conditions, a fluidized film was formed on the wafer W, and then the fluidized film was cured to form a silicon nitride film. Subsequently, the embedding property of the silicon nitride film embedded in the recess was observed by SEM. In Comparative Example 1, a wafer W having a recess formed on the surface having an aspect ratio larger than 5 was used.

In Comparative Example 2, tetrakisdimethylaminosilane (TeDMAS) was used as the precursor gas, and under the same conditions as in Example 1, a fluid film was formed on the wafer W, and then the fluid film was cured. A silicon nitride film was formed. Subsequently, the embedding property of the silicon nitride film embedded in the recess was observed by SEM. In Comparative Example 2, a wafer W having a recess formed on the surface having an aspect ratio smaller than 1 was used. Further, TeDMAS is an aminosilane molecule having a symmetrical structure having no Si—H bond, as shown by the following structural formula.

FIG. 6 is a diagram showing the results of observing the embedding property of the silicon nitride film embedded in the recess, and shows the cross-sectional shape of the silicon nitride film embedded in the recess. Note that FIG. 6 shows the results of Example 1, Example 2, Comparative Example 1 and Comparative Example 2 in order from the left.

As shown in FIG. 6, in Examples 1 and 2, a non-porous and dense silicon nitride film 101 having no voids (gap) or seams (seam) is embedded in the vicinity of the bottom of the recess. I understand. In Examples 1 and 2, the fluid film formed in the recess is heat-treated in a state where the fluidity is maintained, and during the heat treatment, the fluid film is solidified by a condensation reaction to form a silicon nitride film. It is thought that it was a heat treatment.

On the other hand, in Comparative Example 1, it can be seen that the porous silicon nitride film 102 including a large number of pores 102a is embedded in the vicinity of the bottom of the recess. It is considered that this is because, in Comparative Example 1, the fluid film formed in the recess was heat-treated in a state where the fluidity was lost, and the film deposition was reduced during the heat treatment to form a porous structure.

Further, in Comparative Example 2, it can be seen that the silicon nitride film is not embedded in the recess. This is because in Comparative Example 2, by using an aminosilane molecule having a symmetrical structure that does not have a Si—H bond as the precursor gas, the condensation reaction of the fluid film formed in the recesses even after the heat treatment was performed. It is probable that the solidification did not proceed and the fluid membrane disappeared.

From the results of the above examples, it was shown that according to the method for forming a silicon nitride film of the embodiment, a dense silicon nitride film can be embedded in the recess regardless of the aspect ratio of the recess.

The embodiments disclosed this time should be considered to be exemplary in all respects and not restrictive. The above embodiments may be omitted, replaced or modified in various forms without departing from the scope of the appended claims and their gist.

In the above embodiment, a silicon nitride film is formed by using a linear asymmetric aminosilane molecule having a SiH _x (NC _n Hm) _y (n, _m , x, y are natural numbers of 1 or more) structure as a precursor gas. However, the present disclosure is not limited to this. For example, an MH _x (NC _n Hm) _y ( _M is a metal element, and n, m, x, y are natural numbers of 1 or more) containing a metal element instead of Si as a precursor gas. It can also be applied when forming a metal nitride film using linear asymmetric organic metal molecules. That is, using a linear asymmetric organic molecule having an XH _x (NC _n Hm) _y (X is Si or a metal element, and n, _m , x, y are natural numbers of 1 or more) as a precursor gas. It can be applied when forming a nitrogen-containing film. Examples of the metal element include titanium (Ti), tantalum (Ta), zirconium (Zr), and aluminum (Al).

In the above embodiment, the case where the treatment gas contains a precursor gas and a reducing gas and the precursor gas is a linear asymmetric aminosilane molecule has been described, but the present disclosure is not limited thereto. A linear asymmetric organic Si molecule having a structure in which the bond surrounding Si is asymmetric and the dipole moment is large may be used. For example, the formation of a SiC film can be mentioned as a fluid carbon-containing insulating film using an asymmetric organic Si molecule having a SiH _x (C nH _m ) _y ( _n , m, x, y are natural numbers of 1 or more). Further, for example, as a precursor gas, an asymmetric organic metal molecule having an MH _x (C _n H _m ) _y (M is a metal element, and n, m, x, y are natural numbers of 1 or more) is used. It can also be applied when forming a metal carbide film. That is, as the precursor gas, XH _x (N _z C _n H _m ) _y (X is Si or a metal element, n, m, x, y are natural numbers of 1 or more, and z is 0 or 1. ) Applicable when forming an insulating film containing nitrogen and / or carbon using linear asymmetric organic molecules of structure.

In the above embodiment, the case where the step of forming the fluid film and the step of curing the fluid film are carried out in different processing devices connected to the vacuum transfer device has been described, but the present disclosure is not limited to this. For example, the step of forming the fluid film and the step of curing the fluid film may be carried out in the same processing apparatus. Further, for example, a processing apparatus having a first region for heating the substrate to the first temperature for processing and a second region for heating the substrate to the second temperature for processing may be used. In this case, since the step of forming the fluid film and the step of curing the fluid film can be performed in different regions in one processing apparatus, the fluid film is cured after the step of forming the fluid film is completed. It is possible to shorten the transition time until the process of starting the process is started. Further, since the process of curing the fluid film can be performed without carrying the substrate on which the fluid film is formed to the outside of the processing apparatus, it is possible to particularly suppress the mixing of impurities.

This international application claims priority based on Japanese Patent Application No. 2020-212899 filed on December 22, 2020, and the entire contents of this application will be incorporated into this international application.

1 Processing equipment W wafer

Claims (13)

1. A method of forming an insulating film containing nitrogen and / or carbon in a recess formed on the surface of a substrate.
   (A) A step of forming a fluid film in the recess by activating and supplying a processing gas containing a precursor gas and a reducing gas to the substrate adjusted to the first temperature by plasma.
   (B) A step of curing the fluid film by heat-treating the substrate at a second temperature higher than the first temperature.
   Have,
   The precursor gas is XH _x (N _z C _n H _m ) _y (X is Si or a metal element, n, m, x, y are natural numbers of 1 or more, and z is 0 or 1. ) A linear asymmetric organic molecule of structure,
   A method for forming an insulating film containing nitrogen and / or carbon.
2. The step (a) and the step (b) are continuously carried out in a vacuum atmosphere.
   The method for forming an insulating film containing nitrogen and / or carbon according to claim 1.
3. The precursor gas is a linear asymmetric aminosilane molecule having a SiH _x (N _z C _n H _m ) _y (n, m, x, y are natural numbers of 1 or more and z is 0 or 1). ,
   The method for forming an insulating film containing nitrogen and / or carbon according to claim 1 or 2.
4. The precursor gas is BTBAS, BDEAS, 3DMAS or BEMAS.
   The method for forming an insulating film containing nitrogen and / or carbon according to any one of claims 1 to 3.
5. The precursor gas is MH _x (N _z C _n H _m ) _y (M is Ti, Ta, Zr or Al, n, m, x, y is a natural number of 1 or more, and z is 0 or 1). It is a linear asymmetric organic metal molecule of structure,
   The method for forming an insulating film containing nitrogen and / or carbon according to claim 1 or 2.
6. The reducing gas is a gas containing hydrogen and / or nitrogen.
   The method for forming an insulating film containing nitrogen and / or carbon according to any one of claims 1 to 5.
7. The first temperature is 80 ° C. or lower, and the temperature is 80 ° C. or lower.
   The second temperature is 150 ° C. or higher and 750 ° C. or lower.
   The method for forming an insulating film containing nitrogen and / or carbon according to any one of claims 1 to 6.
8. The processing gas comprises at least one of SiH ₄ gas and Si ₂ H ₆ gas.
   The method for forming an insulating film containing nitrogen and / or carbon according to any one of claims 1 to 7.
9. In the step (b), the substrate is exposed to hydrogen plasma.
   The method for forming an insulating film containing nitrogen and / or carbon according to any one of claims 1 to 8.
10. The step (b) is performed within 60 seconds after the step (a).
    The method for forming an insulating film containing nitrogen and / or carbon according to any one of claims 1 to 9.
11. Including repeating the step (a) and the step (b).
    The method for forming an insulating film containing nitrogen and / or carbon according to any one of claims 1 to 10.
12. A method of forming an insulating film containing nitrogen and / or carbon in a recess formed on the surface of a substrate.
    (A) A step of forming a fluid film in the recess by activating and supplying a processing gas containing a precursor gas and a reducing gas to the substrate adjusted to the first temperature by plasma.
    (B) A step of curing the fluid film by heat-treating the substrate at a second temperature higher than the first temperature.
    Have,
    The precursor gas is a plurality of XH _x (N _z C _n H _m ) _y (X is Si or a metal element, n, m, x, y are natural numbers of 1 or more, and z is 0 or 1. There is.) A combination of linearly asymmetric organic molecules of structure,
    A method for forming an insulating film containing nitrogen and / or carbon.
13. A substrate having a recess formed on the surface is adjusted to a first temperature, and a treatment gas containing a precursor gas and a reducing gas is activated and supplied to the substrate by plasma to form a fluid film in the recess. Membrane forming part and
    A heat treatment section that cures the fluid film by heat-treating the substrate at a second temperature higher than the first temperature, and a heat treatment section.
    Equipped with
    The precursor gas is XH _x (N _z C _n H _m ) _y (X is Si or a metal element, n, m, x, y are natural numbers of 1 or more, and z is 0 or 1. ) A linear asymmetric organic molecule of structure,
    Processing equipment.

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