WO2022134308A1

WO2022134308A1 - Quantum dot display apparatus and preparation method therefor and application thereof

Info

Publication number: WO2022134308A1
Application number: PCT/CN2021/078998
Authority: WO
Inventors: 张志宽; 高丹鹏; 杨丽敏; 徐冰; 孙小卫
Original assignee: 深圳扑浪创新科技有限公司
Priority date: 2020-12-21
Filing date: 2021-03-04
Publication date: 2022-06-30
Also published as: CN112652649B; CN112652649A

Abstract

A quantum dot display apparatus and a preparation method therefor and an application thereof. The quantum dot display apparatus comprises a driving circuit (10), a blue light source (20), and a quantum dot deposition layer (30) which are sequentially stacked. The preparation method comprises the following steps: (1) formulating a quantum dot electrodeposition solution; (2) preparing a quantum dot deposition substrate (301); (3) immersing the quantum dot deposition substrate (301) in the quantum dot electrodeposition solution for an electrodeposition reaction, and preparing a quantum dot deposition layer (30); and (4) sequentially stacking and assembling a driving circuit (10), a blue light source (20), and the quantum dot deposition layer (30) into a whole to obtain the quantum dot display apparatus.

Description

A kind of quantum dot display device and its preparation method and application

technical field

The present application belongs to the field of display technology, and relates to a quantum dot display device, for example, a quantum dot display device and a preparation method and application thereof.

Background technique

The particle size of quantum dot (Quantum Dot, QD) materials is generally between 1-10 nm. Since electrons and holes are quantum confined, the continuous energy band structure becomes a discrete energy level structure, so the emission spectrum is very narrow (20 -30nm), high color purity and wide display color gamut, which can greatly exceed the color gamut range of NTSC (>100%); at the same time, the light absorption loss through color filters is small, and low-power display can be realized. As a new generation of light-emitting materials, quantum dots are gradually emerging in LED display applications due to their special properties. Quantum dot materials can effectively improve the color gamut of the display screen and meet the needs of high-quality display applications by absorbing blue light in some wavelength bands and exciting green light and red light in some wavelength bands.

Quantum dot color film is a key component for display devices to achieve ultra-high color gamut full-color display. The existing technology is to disperse quantum dots in photoresist, and then realize quantum dots on specific areas of the substrate through photocuring and etching. Point light conversion material coating. However, this solution has a complex process, high production cost, high requirements on equipment capability and precision, and it is difficult to achieve pixel-level quantum dot arrangement.

CN105388660A discloses a preparation method of a COA type array substrate, the preparation method can realize zero waste of quantum dots, and compared with the existing preparation method of color filter film, no high temperature process is required, and the quantum dots are effectively improved At the same time, it can save two or three lithography processes, thereby reducing costs and protecting the environment; and the obtained quantum dot color film is connected with the electrode layer through chemical bonds, which has a high connection strength, avoiding the connection strength between the photoresist and the substrate. Insufficient lead to the occurrence of undesirable phenomena such as peeling. Since the preparation method requires three times of electrodeposition to separately deposit red, green and blue quantum dots, the time cost is increased to a certain extent.

CN109988573A discloses composite quantum dots, quantum dot solid-state film and application thereof. The composite quantum dots have electronegativity characteristics, and the quantum dot solid-state film can be deposited and prepared by electrodeposition, which can effectively improve the luminous intensity and luminous intensity of display devices. stability. However, the quantum dot solid-state film is not a pixel-level color film, which limits the further improvement of the imaging quality of the display device.

CN207250571U discloses a quantum dot OLED display. The display uses a quantum dot layer on the light-emitting surface of ITO glass to convert the red light emitted by the organic light-emitting layer into blue light by utilizing the photoluminescence characteristics of the quantum dots, and the organic light-emitting layer emits light. The blue light is converted into red light or green light, and the color conversion of OLED is realized. The lifespan of blue OLED and the efficiency of red OLED are improved. At the same time, the light emitted by the quantum dot layer has a narrower spectrum, which makes various monochromatic OLEDs. The color is more saturated, the product performance is significantly improved, and it has a strong competitive advantage. Since the quantum dot layer is formed by using quantum dot ink by inkjet printing, and the thickness of the quantum dot layer needs to be ensured to be 30-100nm, there are also defects in high equipment capability and precision, which limits the product quality. mass production.

CN104576961A discloses a quantum dot-based OLED white light device and a manufacturing method thereof. The white light device is composed of a substrate, a blue light OLED device, a quantum dot layer and a thin film encapsulation layer. The blue light emitted by the blue light OLED device excites the quantum dots in the quantum dot layer. Dots, the light emitted from the quantum dot layer is white light synthesized from the light emitted by the blue OLED and the light emitted by the quantum dots. Since the manufacturing method adopts the spin coating method to form the quantum dot film, and the thickness of the quantum dot film needs to be guaranteed to be the thickness of 2-3 layers of single quantum dots, the equipment capability and precision are relatively high, resulting in expensive production costs. .

It can be seen that how to simplify the production process of quantum dot color film and reduce its production cost, and at the same time realize the arrangement of pixel-level quantum dots, so as to improve the imaging quality of the display device, has become an urgent problem to be solved.

SUMMARY OF THE INVENTION

The purpose of the present application is to provide a quantum dot display device and a preparation method and application thereof, the preparation method simplifies the quantum dot color film production process and reduces the production cost, and the quantum dot display device realizes the pixel-level quantum dot array. Therefore, the imaging quality of the display device is improved, and it can be applied to various display devices and has good application compatibility.

In order to achieve the purpose of this invention, the application adopts the following technical solutions:

In a first aspect, the present application provides a quantum dot display device, the quantum dot display device includes a driving circuit, a blue light source and a quantum dot deposition layer that are stacked in sequence.

The driving circuit is used to control the opening and closing and brightness adjustment of the blue light source.

The quantum dot deposition layer includes a quantum dot deposition substrate and at least two pixel units uniformly arranged on the quantum dot deposition substrate.

The blue light source provides excitation blue light for the pixel unit.

The pixel unit includes a red light quantum dot deposition unit, a green light quantum dot deposition unit and a blue light transmission unit.

In this application, according to the requirements of real images, the blue light source emits blue light of different intensities with a peak wavelength of 420-480 nm under the control of the driving circuit, and the blue light can excite the red quantum dot deposition unit and the green quantum dots. point deposition unit. The excited red quantum dot deposition unit can emit red light with a peak wavelength of 600-660 nm, and the half-wave width of the red light is less than 35 nm; the excited green quantum dot deposition unit can emit a peak wavelength of 600-660 nm. 510-550nm green light, the half-wave width of the green light is less than 35nm; the blue light transmission unit can transmit the blue light emitted by the blue light source to realize the composite color display of red light, green light and blue light. In addition, the red light quantum dot deposition unit, the green light quantum dot deposition unit and the blue light transmission unit are all pixel-level sizes, with high display resolution, and the three pixel units are arranged separately and independently, and the red light, green light and blue light are independently emitted respectively. , so the filter can be eliminated, thereby improving the light pass rate and light efficiency, and reducing the overall power consumption of the display device.

Optionally, the blue light source includes any one or a combination of at least two of a point light source, a line light source, or a surface light source. Typical but non-limiting combinations include a combination of a point light source and a line light source, and a line light source and a surface light source. , the combination of point light source and surface light source, or the combination of point light source, line light source and surface light source.

In this application, the blue light source can be any one of LED backlight, OLED light-emitting layer, Mini-LED matrix light source, Micro-LED point light source, plasma light-emitting layer or semiconductor laser. It is compatible with the specific application device of the quantum dot display device.

Optionally, the quantum dot deposition substrate includes a transparent insulating substrate and at least two transparent conductive units uniformly arranged on the transparent insulating substrate.

Optionally, the transparent insulating substrate is connected to the blue light source.

Optionally, the transparent conductive unit is connected to the pixel unit.

Optionally, the transparent conductive unit is electrically connected to at least one transparent conductive unit in an adjacent position.

Optionally, the transparent insulating substrate comprises any one or at least one of glass, polymethyl methacrylate, polystyrene, polycarbonate, styrene acrylonitrile or styrene-methyl methacrylate copolymer Combinations of the two, typical but non-limiting combinations include glass and polymethyl methacrylate, polymethyl methacrylate and polystyrene, polystyrene and polycarbonate, polycarbonate Combination with styrene acrylonitrile, combination of styrene acrylonitrile and styrene-methyl methacrylate copolymer, glass, combination of polymethyl methacrylate and polystyrene, polymethyl methacrylate, polyphenylene A combination of ethylene and polycarbonate, a combination of polystyrene, polycarbonate and styrene acrylonitrile, or a combination of polycarbonate, styrene acrylonitrile and styrene-methyl methacrylate copolymer.

In this application, the light transmittance of the transparent insulating substrate is ≥90%, for example, it can be 90%, 91%, 92%, 93%, 94% or 95%, but not limited to the listed values, within the range of values Other values not listed are also applicable; the present application improves the transmittance of the blue light emitted by the blue light source by making the transmittance of the transparent insulating substrate ≥90%, thereby reducing the overall power consumption of the display device.

Optionally, the transparent conductive unit and the pixel unit are both one-dimensional dots and/or two-dimensional strips.

Optionally, the material of the transparent conductive unit includes any one or a combination of at least two of ITO film, transparent conductive glass or aluminum-doped zinc oxide, and a typical but non-limiting combination includes ITO film and transparent conductive glass. The combination of transparent conductive glass and aluminum-doped zinc oxide, the combination of ITO film and aluminum-doped zinc oxide, or the combination of ITO film, transparent conductive glass and aluminum-doped zinc oxide.

In this application, the light transmittance of the material of the transparent conductive unit is >83%, for example, it may be 83%, 84%, 85%, 86%, 87%, 88%, 89% or 90%, but not limited to the listed The value of , other values not listed in the numerical range are also applicable; the resistivity is less than 1×10 ^-3 Ω·m, for example, it can be 0.5×10 ^-3 Ω·m, 0.6×10 ^-3 Ω·m, 0.7×10 ^-3 Ω·m, 0.8×10 ^-3 Ω·m or 0.9×10 ^-3 Ω·m; this application uses transparent conductive units with light transmittance>83% and resistivity less than 1×10 ^-3 Ω·m, The transmittance of the blue light emitted by the blue light source is improved, the current consumption is reduced, and the overall power consumption of the display device is reduced.

Optionally, the red light quantum dot material is a core-shell structure, and the core-shell structure includes a red light quantum dot core and a red light quantum dot coating layer that are arranged in layers.

Optionally, the particle size of the red quantum dot core is 7-12nm, for example, it can be 7nm, 8nm, 9nm, 10nm, 11nm or 12nm, but not limited to the listed numerical values, other unlisted values within the numerical range. The same applies to numerical values.

Optionally, the outer surface of the red light quantum dot coating layer is bound with a first ligand material, and the first ligand material is an organic salt substance containing ionic bonds. The first ligand material is easily soluble in solution to gain or lose electrons, for example, it can be any one or at least one of fatty acid salts, sulfate ester salts, phosphate ester salts, fatty amine salts, ethanolamine salts or polyethylene polyammonium salts. Combinations of the two, typical but non-limiting combinations include the combination of fatty acid salts and sulfate ester salts, the combination of sulfate ester salts and phosphate ester salts, the combination of phosphate ester salts and fatty amine salts, the combination of fatty amine salts and ethanolamine salts. Combination, combination of ethanolamine salt and polyethylene polyammonium salt, combination of fatty acid salt, sulfate ester salt and phosphate ester salt, combination of sulfate ester salt, phosphate ester salt and fatty amine salt, phosphate ester salt, fatty amine salt and ethanolamine A combination of salts, or a combination of fatty amine salts, ethanolamine salts, and polyethylene polyammonium salts.

Optionally, the green light quantum dot material is a core-shell structure, and the core-shell structure includes a green light quantum dot core and a green light quantum dot cladding layer arranged in layers.

Optionally, the particle size of the green quantum dot core is 3-7nm, for example, it can be 3nm, 4nm, 5nm, 6nm or 7nm, but is not limited to the enumerated numerical values, other unenumerated numerical values within this numerical range are the same. Be applicable.

Optionally, the outer surface of the green light quantum dot coating layer is bound with a second ligand material, and the second ligand material is an organic salt substance containing ionic bonds. The second ligand material is easily soluble in solution to gain and lose electrons, for example, it can be any one or at least one of fatty acid salts, sulfate ester salts, phosphate ester salts, fatty amine salts, ethanolamine salts or polyethylene polyammonium salts. Combinations of the two, typical but non-limiting combinations include the combination of fatty acid salts and sulfate ester salts, the combination of sulfate ester salts and phosphate ester salts, the combination of phosphate ester salts and fatty amine salts, the combination of fatty amine salts and ethanolamine salts. Combination, combination of ethanolamine salt and polyethylene polyammonium salt, combination of fatty acid salt, sulfate ester salt and phosphate ester salt, combination of sulfate ester salt, phosphate ester salt and fatty amine salt, phosphate ester salt, fatty amine salt and ethanolamine A combination of salts, or a combination of fatty amine salts, ethanolamine salts, and polyethylene polyammonium salts.

In this application, the ability of the first ligand material and the second ligand material to gain and lose electrons after dissolving in a solution is opposite. The second ligand material loses electrons to form positive ions after dissolving; or, the first ligand material loses electrons to form positive ions after dissolving, and then the second ligand material gains electrons to form negative ions after dissolving.

In this application, the red light quantum dot core and the green light quantum dot core are both A _X M _Y E _Z system materials.

The A element is any one or a combination of at least two of Ba, Ag, Na, Fe, In, Cd, Zn, Ga, Mg, Pb or Cs, and a typical but non-limiting combination includes Ba and Ag. Combination, combination of Na and Fe, combination of In and Cd, combination of Zn and Ga, combination of Mg and Pb, combination of Cs, Ba and Ag, combination of Na, Fe and In, combination of Cd, Zn and Ga, A combination of Mg, Pb, and Cs, a combination of Ba, Ag, Na, and Fe, a combination of In, Cd, Zn, and Ga, or a combination of Mg, Pb, Cs, and Ba.

The M element is any one or a combination of at least two of S, Cl, O, As, N, P, Se, Te, Ti, Zr or Pb, and typical but non-limiting combinations include S and Cl. Combination, combination of O and As, combination of N and P, combination of Se and Te, combination of Ti and Zr, combination of Pb, S and Cl, combination of O, As and N, combination of P, Se and Te, A combination of Ti, Zr, and Pb, a combination of S, Cl, O, and As, a combination of N, P, Se, and Te, or a combination of Ti, Zr, Pb, and S.

The E element is any one or a combination of at least two of S, As, Se, O, Cl, Br or I, typical but non-limiting combinations include the combination of S and As, the combination of Se and O, Combination of Cl and Br, Combination of I and S, Combination of As, Se and O, Combination of Cl, Br and I, Combination of S, As, Se and O, Combination of O, Cl, Br and I, or As , a combination of Se, O, Cl and Br.

X is 0.3-2.0, such as 0.3, 0.4, 0.5, 0.6, 0.7, 0.8, 0.9, 1.0, 1.1, 1.2, 1.3, 1.4, 1.5, 1.6, 1.7, 1.8, 1.9 or 2.0, but not limited to Recited values apply equally well to other non-recited values within that range.

Y is 0.5-3.0, for example, can be 0.5, 0.7, 0.9, 1.0, 1.1, 1.3, 1.5, 1.7, 1.9, 2.0, 2.1, 2.3, 2.5, 2.7, 2.9 or 3.0, but not limited to the listed values, The same applies to other non-recited values within this numerical range.

Z is 0-4.0, for example, it can be 0, 0.25, 0.5, 0.75, 1.0, 1.25, 1.5, 1.75, 2.0, 2.25, 2.5, 2.75, 3.0, 3.25, 3.5, 3.75 or 4.0, but not limited to the listed Numerical values, other non-recited values within the numerical range also apply.

In this application, both the red quantum dot coating layer and the green quantum dot coating layer include any one or at least two of organic polymer materials, inorganic oxides, metal oxides, metal elements or alloys. Combinations, typical but non-limiting combinations include the combination of organic polymer materials and inorganic oxides, the combination of inorganic oxides and metal oxides, the combination of metal oxides and metal elements, the combination of metal elements and alloys, organic polymers Materials, combinations of inorganic oxides and metal oxides, combinations of inorganic oxides, metal oxides and simple metals, or combinations of metal oxides, simple metals and alloys.

In a second aspect, the present application provides a preparation method of a quantum dot display device according to the first aspect, the preparation method comprising the following steps:

(1) Preparation of quantum dot electrodeposition solution;

(2) preparing a quantum dot deposition substrate;

(3) immersing the quantum dot deposition substrate prepared in step (2) in the quantum dot electrodeposition solution prepared in step (1) to carry out an electrodeposition reaction to prepare a quantum dot deposition layer;

(4) The driving circuit, the blue light source and the quantum dot deposition layer obtained in step (3) are stacked and assembled in sequence to form a quantum dot display device.

In this application, steps (1) and (2) are performed in no order, and steps (1) and (2) are independent of each other and do not affect each other.

In this application, the quantum dot electrodeposition solution described in step (1) and step (3) is a red light quantum dot electrodeposition solution or a green light quantum dot electrodeposition solution.

In the present application, the electrodeposition reaction is used to prepare the quantum dot deposition layer, which realizes the pixel-level coating of the quantum dot material, and the process is simple, the manufacturing cost is low, and mass production can be realized.

Optionally, the specific steps of step (1) are as follows:

a. Mix the solution containing the quantum dot core and the quantum dot coating layer solution, so that the quantum dot coating layer is formed on the surface of the quantum dot core, and the solution containing the core-shell type quantum dot material is obtained;

b. Mixing the solution containing the core-shell quantum dot material and the ligand solution obtained in step a, so that the outer surface of the quantum dot coating layer is bound with the ligand material to obtain a quantum dot electrodeposition solution.

In this application, the quantum dot coating solution in step a includes any one or at least one of polymethyl acrylate (PMA), polyvinylidene fluoride (PVDF), zinc sulfate, copper sulfate, aluminum sulfate or silica sol Combinations of the two, typical but non-limiting combinations include the combination of PMA and PVDF, the combination of PVDF and zinc sulfate, the combination of zinc sulfate and copper sulfate, the combination of copper sulfate and aluminum sulfate, the combination of aluminum sulfate and silica sol, The combination of PMA, PVDF and zinc sulfate, the combination of PVDF, zinc sulfate and copper sulfate, the combination of zinc sulfate, copper sulfate and aluminum sulfate, or the combination of copper sulfate, aluminum sulfate and silica sol.

In this application, the ligand solution in step b is an organic salt solution containing ionic bonds, and the organic salt solutions containing ionic bonds include fatty acid salt solution, sulfate ester salt solution, phosphate ester salt solution, fatty amine salt solution, Any one or a combination of at least two of ethanolamine salt solution or polyethylene polyammonium salt solution, typical but non-limiting combinations include the combination of fatty acid salt solution and sulfate salt solution, sulfate salt solution and phosphate ester salt The combination of solutions, the combination of phosphate ester salt solution and fatty amine salt solution, the combination of fatty amine salt solution and ethanolamine salt solution, the combination of ethanolamine salt solution and polyethylene polyammonium salt solution, fatty acid salt solution, sulfate ester salt solution and The combination of phosphate ester salt solution, the combination of sulfate ester salt solution, phosphate ester salt solution and fatty amine salt solution, the combination of phosphate ester salt solution, fatty amine salt solution and ethanolamine salt solution, or the combination of fatty amine salt solution, ethanolamine salt solution and A combination of polyethylene polyammonium salt solutions.

In the present application, the mixing in step a is to drop the quantum dot coating layer solution into the solution containing the quantum dot core, and the temperature of the dropwise addition is 120-320°C, for example, it can be 120°C, 140°C , 160°C, 180°C, 200°C, 220°C, 240°C, 260°C, 280°C, 300°C or 320°C, but are not limited to the recited values, and other unrecited values within this range of values are also applicable.

In this application, the mixing in step b is stirring, and the stirring temperature is 90-180°C, for example, 90°C, 100°C, 110°C, 120°C, 130°C, 140°C, 150°C, 160°C, 170°C or 180°C, but not limited to the recited values, and other non-recited values within this range of values are also applicable.

The time of the stirring is 0.5-30min, for example, it can be 0.5min, 1min, 5min, 10min, 15min, 20min, 25min or 30min, but it is not limited to the enumerated numerical values, and other unenumerated numerical values in this numerical range are also applicable .

In the present application, the quantum dot electrodeposition solution in step (1) includes a red light quantum dot electrodeposition solution and a green light quantum dot electrodeposition solution.

The specific steps of preparing the red light quantum dot electrodeposition solution are as follows:

a1. Mix the solution containing the red light quantum dot core and the red light quantum dot coating layer solution, so that the red light quantum dot coating layer is formed on the surface of the red light quantum dot core, and the solution containing the core-shell type red light quantum dot material is obtained;

b1. Mix the solution containing the core-shell red light quantum dot material obtained in step a1 with the first ligand solution, so that the outer surface of the red light quantum dot coating layer is bound with the first ligand material to obtain a red light quantum dot electrodeposition solution.

The specific steps of preparing the green quantum dot electrodeposition solution are as follows:

a2. Mix the solution containing the green quantum dot core and the green quantum dot coating solution, so that the green quantum dot coating layer is formed on the surface of the green quantum dot core to obtain a solution containing the core-shell type green quantum dot material;

b2. Mix the solution containing the core-shell type green quantum dot material obtained in step a2 with the second ligand solution, so that the outer surface of the green quantum dot coating layer is bound with the second ligand material to obtain a green quantum dot electrodeposition solution.

Optionally, the specific steps of step (2) are as follows:

c. Coating and curing a transparent conductive material on a transparent insulating substrate to obtain a first substrate;

d. dividing at least 2 conductive regions on the surface of the transparent conductive material of the first substrate obtained in step c, coating and curing the anti-etching material in the conductive regions to obtain a second substrate;

E. etch the anti-etching material side surface of the second base material obtained in step d, and remove the transparent conductive material outside the conductive area to obtain a third base material;

f. peeling off the anti-etching material of the third base material obtained in step e, so that a transparent conductive unit is formed in the conductive area to obtain a fourth base material;

g. After cleaning the fourth substrate obtained in step f, install a circuit between the transparent conductive unit on the fourth substrate and at least one transparent conductive unit in an adjacent position to achieve electrical continuity, thereby obtaining a quantum dot deposition substrate.

In the present application, the coating methods of step c and step d include any one or a combination of at least two of spraying, magnetron sputtering or vacuum evaporation.

In the present application, the solidifying manners of step c and step d include any one or a combination of at least two of heating, freezing or lighting.

In the present application, the conductive region in step d is one-dimensional dot shape and/or two-dimensional strip shape.

In the present application, the anti-etching material in step d includes any one of siloxane, monosilane, acrylic resin, phenolic resin, chromium-containing epoxy glue, chromium oxide-containing epoxy glue or potassium dichromate-containing epoxy glue one or a combination of at least two.

In this application, the etching in step e includes chemical etching and/or physical etching.

In the present application, the cleaning in step g includes any one or a combination of at least two of organic solution cleaning, water cleaning or Plasma cleaning.

Optionally, the specific steps of step (3) are as follows:

h. immersing the quantum dot deposition substrate prepared in step (2) in the quantum dot electrodeposition solution prepared in step (1), and adding a reaction electrode to the quantum dot electrodeposition solution;

i. Apply a direct current voltage opposite to that charged by the ligand material at the transparent conductive unit of the quantum dot deposition unit to be deposited on the quantum dot deposition substrate, and apply the same charge as the ligand material at the reaction electrode. DC voltage, under the action of the electric field, the quantum dot material is electrodeposited on the corresponding transparent conductive unit to form a quantum dot deposition unit;

j. taking out the quantum dot deposition substrate of the deposited quantum dot deposition unit obtained in step i, and curing the quantum dot deposition unit;

k. Coating and curing encapsulation glue on the quantum dot deposition substrate of the cured quantum dot deposition unit obtained in step j, to obtain a quantum dot deposition layer.

In this application, the material of the reaction electrode in step h includes any one or a combination of at least two of gold, silver or copper.

In this application, the DC voltage described in step i is 1-12V, such as 1V, 2V, 3V, 4V, 5V, 6V, 7V, 8V, 9V, 10V, 11V or 12V, but not limited to the listed values , other non-recited values within this numerical range are also applicable.

In this application, the electrodeposition time described in step i is 1-30min, such as 1min, 5min, 10min, 15min, 20min, 25min or 30min, but is not limited to the enumerated numerical values, other unenumerated values within the numerical range The same applies to numerical values.

In this application, the solidifying manners of step j and step k include any one or a combination of at least two of heating, freezing or lighting.

In the present application, the coating method in step k includes spin coating method and/or spray coating method.

In the present application, the quantum dot deposition layer in step (3) includes a red light quantum dot deposition layer and a green light quantum dot deposition layer.

The specific steps of preparing the red light quantum dot deposition layer are as follows:

h1. Immerse the quantum dot deposition substrate obtained in step (2) in the red light quantum dot electrodeposition solution obtained in step (1), and add a reaction electrode to the red light quantum dot electrodeposition solution;

i1. Apply a direct current voltage opposite to that of the first ligand material at the transparent conductive unit where the red light quantum dot deposition unit is to be deposited on the quantum dot deposition substrate, and apply a direct current voltage opposite to that of the first ligand material at the reaction electrode Under the action of the electric field, under the action of the electric field, the red light quantum dot material is electrodeposited on the corresponding transparent conductive unit to form the red light quantum dot deposition unit;

j1. Take out the quantum dot deposition substrate of the deposited red light quantum dot deposition unit obtained in step i1, and cure the red light quantum dot deposition unit;

k1. Coating and curing encapsulation glue on the quantum dot deposition substrate of the cured red light quantum dot deposition unit obtained in step j1 to obtain a red light quantum dot deposition layer.

The specific steps for preparing the green light quantum dot deposition layer are as follows:

h2. Immerse the quantum dot deposition substrate obtained in step (2) in the green light quantum dot electrodeposition solution obtained in step (1), and add a reaction electrode to the green light quantum dot electrodeposition solution;

i2. Applying a direct current voltage opposite to that charged by the second ligand material at the transparent conductive unit where the green light quantum dot deposition unit is to be deposited on the quantum dot deposition substrate, and applying a direct current voltage opposite to that of the second ligand material at the reaction electrode Under the action of the electric field, under the action of the electric field, the green quantum dot material is electrodeposited on the corresponding transparent conductive unit to form a green quantum dot deposition unit;

j2. Take out the quantum dot deposition substrate of the deposited green light quantum dot deposition unit obtained in step i2, and cure the green light quantum dot deposition unit;

k2. Coating and curing encapsulation glue on the quantum dot deposition substrate of the cured green light quantum dot deposition unit obtained in step j2 to obtain a green light quantum dot deposition layer.

As an optional technical solution, the preparation method of the quantum dot display device described in this application includes the following steps:

(1) mixing the solution containing the quantum dot core and the quantum dot coating layer solution to form a quantum dot coating layer on the surface of the quantum dot core to obtain a solution containing the core-shell type quantum dot material; mixing the obtained solution containing the core-shell type quantum dot material The solution and the ligand solution are obtained, so that the outer surface of the quantum dot coating layer is bonded with the ligand material, and the quantum dot electrodeposition solution is obtained;

(2) coating and curing a transparent conductive material on a transparent insulating substrate to obtain a first substrate; at least two conductive regions are divided on the surface of the transparent conductive material side of the obtained first substrate, and within the conductive regions coating and curing the anti-etching material to obtain a second base material; etching the surface of one side of the anti-etching material of the obtained second base material to remove the transparent conductive material outside the conductive area to obtain a third base material; peeling off the obtained third base material The anti-etching material of the material is used to form a transparent conductive unit in the conductive area to obtain a fourth substrate; after cleaning the obtained fourth substrate, each transparent conductive unit on the fourth substrate and at least one adjacent position A circuit is installed between one transparent conductive unit to achieve electrical conduction, and a quantum dot deposition substrate is obtained;

(3) immersing the quantum dot deposition substrate obtained in step (2) in the quantum dot electrodeposition solution obtained in step (1), and adding a reaction electrode to the quantum dot electrodeposition solution; A DC voltage opposite to that charged by the ligand material is applied to the transparent conductive unit of the quantum dot deposition unit to be deposited on the substrate, and a DC voltage that is the same as that charged by the ligand material is applied to the reaction electrode, under the action of the electric field , the quantum dot material is electrodeposited on the corresponding transparent conductive unit to form a quantum dot deposition unit; the obtained quantum dot deposition substrate of the deposited quantum dot deposition unit is taken out, and the quantum dot deposition unit is cured; coating and curing the encapsulation glue on the quantum dot deposition substrate of the unit to obtain a quantum dot deposition layer;

In a third aspect, the present application provides an application of the quantum dot display device according to the first aspect, the application includes using the quantum dot display device in an LCD display, an OLED display, a Mini-LED display, a Micro-LED display Display, plasma display or semiconductor laser display.

In the above applications, blue light with a peak wavelength of 420-480 nm is emitted by an LED backlight, an OLED light-emitting layer, a Mini-LED matrix light source, a Micro-LED point light source, a plasma light-emitting layer or a semiconductor laser, respectively. The blue light source, combined with the quantum dot display device provided in this application, realizes the display application.

Compared with the prior art, the present application has the following beneficial effects:

(1) In the quantum dot display device provided by the present application, the red light quantum dot deposition unit and the green light quantum dot deposition unit in the quantum dot deposition layer are excited by the blue light emitted by the blue light source, respectively and independently emit red light and green light, and the composite is composed of The blue light transmitted by the blue light transmission unit realizes color display;

(2) The red light quantum dot deposition unit, the green light quantum dot deposition unit and the blue light transmission unit described in this application are all pixel-level sizes, with high display resolution, and three types of pixel units are arranged separately and independently, red light, green light and blue light. They are independently emitted, so the filter can be eliminated, thereby improving the light transmission rate and light efficiency, and reducing the overall power consumption of the display device;

(3) The present application adopts the electrodeposition reaction to prepare the quantum dot deposition layer, realizes the pixel-level coating of the quantum dot material, and the process is simple, the manufacturing cost is low, and mass production can be realized;

(4) The quantum dot display device provided by the present application can be used in various display devices such as LCD display, OLED display, Mini-LED display, Micro-LED display, plasma display or semiconductor laser display, and has good application compatibility.

Description of drawings

1 is a schematic cross-sectional structural diagram of a quantum dot display device provided in Embodiment 1;

2 is a schematic top-view structural diagram of a quantum dot deposition substrate in the quantum dot display device provided in Embodiment 1;

3 is a schematic diagram of a core-shell structure of a red light quantum dot material in the quantum dot display device provided in Example 1;

4 is a schematic diagram of a core-shell structure of a green light quantum dot material in the quantum dot display device provided in Example 1;

Fig. 5 is the preparation flow chart of red light quantum dot electrodeposition solution in the quantum dot display device preparation method that embodiment 1 provides;

6 is a schematic diagram of the electrodeposition reaction of red light quantum dots in the preparation method of the quantum dot display device provided in Example 1.

Among them: 10-drive circuit; 20-blue light source; 30-quantum dot deposition layer; 301-quantum dot deposition substrate; 3011-transparent insulating substrate; 3012-transparent conductive unit; 302-pixel unit; 3021-red quantum dot deposition Unit; 3022-green quantum dot deposition unit; 3023-blue light transmission unit; 40-red quantum dot material; 401-red quantum dot core; 402-red quantum dot coating layer; 403-sodium oleate ligand material; 4031- Negatively charged functional group; 50-green quantum dot material; 501-green quantum dot core; 502-green quantum dot coating; 503-dodecyltrimethylammonium chloride ligand material; 5031-positively charged functional group; 60-reactive electrode.

Detailed ways

The technical solutions of the present application are further described below through specific embodiments. It should be understood by those skilled in the art that the embodiments are only for helping the understanding of the present application, and should not be regarded as a specific limitation of the present application.

Example 1

The present embodiment provides a quantum dot display device, a preparation method and an application thereof. As shown in FIG. 1 and FIG. 2 , the quantum dot display device includes a driving circuit 10 , a blue light source 20 and a quantum dot deposition layer 30 that are stacked in sequence; The blue light source 20 is a Micro-LED point light source; the quantum dot deposition layer 30 includes a quantum dot deposition substrate 301 and a red quantum dot deposition unit 3021, a green quantum dot deposition unit 3022 and The blue light transmission unit 3023 is the three pixel units 302; the quantum dot deposition substrate 301 includes a transparent insulating substrate 3011 made of glass connected to the Micro-LED point light source, and a transparent insulating substrate 3011 uniformly disposed on the transparent insulating substrate 3011. The pixel unit 302 is connected to a transparent conductive unit 3012 made of an ITO film material; the transparent conductive unit 3012 and the pixel unit 302 are both one-dimensional dots.

The red light quantum dot material 40 in the red light quantum dot deposition unit 3021 in this embodiment has a core-shell structure. As shown in FIG. 3 , the core-shell structure includes a stacked CdSe red light quantum dot core 401 and an oleic acid on the outer surface. The zinc oxide red quantum dot coating layer 402 of the sodium ligand material 403, the ligand material 403 is dissolved in the solution to generate negatively charged functional groups 4031, and the particle size of the red quantum dot core 401 is 9.5 nm.

The green light quantum dot material 50 in the green light quantum dot deposition unit 3022 in this embodiment is a core-shell structure, and as shown in FIG. 4 , the core-shell structure includes a layered CdSe _0.8 S _0.2 green light quantum dot core 501 and an outer surface bond A zinc oxide green quantum dot coating layer 502 of a dodecyl trimethyl ammonium chloride ligand material 503, the ligand material 503 is dissolved in a solution to generate a positively charged functional group 5031, the green light quantum dots The particle size of the core 501 is 5 nm.

The preparation method of the quantum dot display device described in this embodiment includes the following steps:

(1) at 220° C., drop the zinc sulfate red quantum dot coating solution into the solution containing the CdSe red quantum dot core 401, so that the surface of the CdSe red quantum dot core 401 forms the zinc oxide red quantum dot coating layer 402 , to obtain a solution containing core-shell type red light quantum dot material 40; at 135 ° C, stirring for 15min to mix the obtained solution containing core-shell type red light quantum dot material 40 and sodium oleate ligand solution, so that zinc oxide red light quantum dots are coated The outer surface of the layer 402 is bonded with a sodium oleate ligand material 403 to obtain a red light quantum dot electrodeposition solution (see FIG. 5 );

At 220°C, the coating solution of zinc sulfate green quantum dots was added dropwise to the solution containing CdSe _0.8 S _0.2 green quantum dot cores 501 to form zinc oxide green quantum dots on the surface of CdSe _0.8 S _0.2 green quantum dot cores 501 The coating layer 502 is to obtain a solution containing the core-shell type green quantum dot material 50; at 135 ° C, the solution containing the core-shell type green light quantum dot material 50 is mixed with dodecyltrimethylammonium chloride by stirring for 15min. The bulk solution is used to bond the dodecyltrimethylammonium chloride ligand material 503 to the outer surface of the zinc oxide green quantum dot coating layer 502 to obtain a green quantum dot electrodeposition solution;

(2) spraying on the transparent insulating substrate 3011 made of glass and heating and curing the ITO film at 80°C to obtain a first substrate; a one-dimensional point-like conductive area is divided on the surface of the ITO film side of the obtained first substrate , spraying in the conductive area and heating and curing the phenolic resin anti-etching material at 100 ° C to obtain a second substrate; performing hydrofluoric acid etching on the side surface of the anti-etching material of the second substrate obtained to remove the outside of the conductive area The obtained ITO film is obtained as a third base material; the anti-etching material of the obtained third base material is peeled off, so that a transparent conductive unit 3012 made of one-dimensional point-like ITO film material is formed in the conductive area to obtain a fourth base material; After the material is cleaned with ethanol, a circuit is installed between each transparent conductive unit 3012 on the fourth substrate and a transparent conductive unit 3012 at an adjacent position to achieve electrical continuity, and a quantum dot deposition substrate 301 is obtained;

(3) The quantum dot deposition substrate 301 obtained in step (2) is immersed in the red light quantum dot electrodeposition solution obtained in step (1), and the reaction electrode 60 made of copper is added to the red light quantum dot electrodeposition solution. On the quantum dot deposition substrate 301, a positive DC voltage is applied at the transparent conductive unit 3012 of the red light quantum dot deposition unit 3021 to be deposited, and a negative DC voltage is applied at the reaction electrode 60 for 15min under the action of the 6V electric field, The red light quantum dot material 40 is electrodeposited on the corresponding transparent conductive unit 3012 to form a red light quantum dot deposition unit 3021; the obtained quantum dot deposition substrate 301 on which the red light quantum dot deposition unit 3021 has been deposited is taken out, and the red light quantum dot deposition unit 3021 is heated and cured at 80°C. Red light quantum dot deposition unit 3021 (see FIG. 6 );

The quantum dot deposition substrate 301 obtained in step (2) is immersed in the green light quantum dot electrodeposition solution obtained in step (1), and a reaction electrode 60 made of copper is added to the green light quantum dot electrodeposition solution; A negative DC voltage is applied at the transparent conductive unit 3012 of the green quantum dot deposition unit 3022 to be deposited on the quantum dot deposition substrate 301, and a positive DC voltage is applied at the reaction electrode 60. The material 50 is electrodeposited on the corresponding transparent conductive unit 3012 to form a green light quantum dot deposition unit 3022; the obtained quantum dot deposition substrate 301 on which the green light quantum dot deposition unit 3022 has been deposited is taken out, and the green light quantum dots are heated and cured at 80° C. deposition unit 3022;

Spin coating on the obtained quantum dot deposition substrates 301 of the cured red light quantum dot deposition unit 3021 and the green light quantum dot deposition unit 3022 and heat and cure the encapsulation glue at 80° C. to obtain the quantum dot deposition layer 30;

(4) The driving circuit 10, the Micro-LED point light source and the quantum dot deposition layer 30 obtained in step (3) are stacked and assembled in sequence to form a quantum dot display device.

The quantum dot display device described in this embodiment can be used in a Micro-LED display, and has good application compatibility.

The evaluation result of the quantum dot display device described in this embodiment: the color gamut value of the display device is 115%, which is larger than the color gamut range of NTSC; the light efficiency is improved by more than 30%.

Example 2

The present embodiment provides a quantum dot display device and a preparation method and application thereof. The quantum dot display device includes a driving circuit, a blue light source and a quantum dot deposition layer that are stacked in sequence; the blue light source is a Mini-LED matrix light source; The quantum dot deposition layer includes a quantum dot deposition substrate and three pixel units, a red quantum dot deposition unit, a green quantum dot deposition unit and a blue light transmission unit, which are uniformly arranged on the quantum dot deposition substrate; the quantum dot deposition substrate includes and A transparent insulating substrate made of polymethyl methacrylate connected to the Mini-LED matrix light source and a transparent conductive unit made of transparent conductive glass that is evenly arranged on the transparent insulating substrate and connected to the pixel unit; the transparent Both the conductive unit and the pixel unit are one-dimensional dots.

The red light quantum dot material in the red light quantum dot deposition unit described in this embodiment is a core-shell structure, and the core-shell structure includes a layered CsPbBr ₃ red light quantum dot core and an outer surface bonded with a sodium dodecyl sulfate ligand material The PMA red light quantum dot coating layer, the ligand material generates negatively charged functional groups after dissolving in the solution, and the particle size of the red light quantum dot core is 10.75nm.

The green light quantum dot material in the green light quantum dot deposition unit described in this embodiment is a core-shell structure, and the core-shell structure includes a layered CsPbBr ₃ green light quantum dot core and a PMA bonded to an ethanolamine hydrochloride ligand material on the outer surface. For the green quantum dot coating layer, the ligand material generates a positively charged functional group after being dissolved in a solution, and the particle size of the green quantum dot core is 6 nm.

(1) At 270°C, drop the PMA red quantum dot coating solution into the solution containing the CsPbBr ₃ red quantum dot core, so that the surface of the CsPbBr ₃ red quantum dot core forms a PMA red quantum dot coating layer to obtain a solution containing The solution of core-shell type red light quantum dot material; at 158 ℃, stir for 23min to mix the obtained solution containing core-shell type red light quantum dot material and sodium dodecyl sulfate ligand solution, so that the outer surface of the PMA red light quantum dot coating layer is obtained. The surface is bonded with sodium dodecyl sulfate ligand material to obtain red light quantum dot electrodeposition solution;

At 270 °C, the PMA green quantum dot coating solution was added dropwise to the solution containing the CsPbBr ₃ green quantum dot core, so that the surface of the CsPbBr ₃ green quantum dot core formed a PMA green quantum dot coating layer to obtain a core-shell type solution of green quantum dot material; at 158 ℃, stirring for 23min to mix the obtained solution containing core-shell type green quantum dot material and ethanolamine hydrochloride ligand solution, so that the outer surface of the CsPbBr ₃ green quantum dot coating layer is bound with ethanolamine Hydrochloride ligand material to obtain green quantum dot electrodeposition solution;

(2) spraying on the transparent insulating substrate made of polymethyl methacrylate and freezing and solidifying the transparent conductive glass at -80°C to obtain a first substrate; dividing the surface of the transparent conductive glass on one side of the obtained first substrate A one-dimensional point-shaped conductive area is drawn, sprayed in the conductive area and heated and cured at 100° C. The anti-etching material of chrome-containing epoxy adhesive is obtained to obtain a second substrate; the surface of one side of the anti-etching material of the obtained second substrate is Laser etching is performed to remove the transparent conductive glass outside the conductive area to obtain a third base material; peel off the anti-etching material of the obtained third base material, so that a one-dimensional point-shaped transparent conductive glass material is formed in the conductive area. Four substrates; after the obtained fourth substrate is washed with distilled water, a circuit is installed between each transparent conductive unit on the fourth substrate and a transparent conductive unit in an adjacent position to achieve electrical conduction, and quantum dots are obtained deposition substrate;

(3) immersing the quantum dot deposition substrate obtained in step (2) in the red light quantum dot electrodeposition solution obtained in step (1), and adding a reaction electrode made of silver to the red light quantum dot electrodeposition solution; On the quantum dot deposition substrate, a positive DC voltage is applied to the transparent conductive unit of the red light quantum dot deposition unit to be deposited, and a negative DC voltage is applied to the reaction electrode, which lasts for 22.5 minutes under the action of a 9V electric field. deposit on the corresponding transparent conductive unit to form a red light quantum dot deposition unit; take out the obtained quantum dot deposition substrate on which the red light quantum dot deposition unit has been deposited, and heat and solidify the red light quantum dot deposition unit at 80°C;

The quantum dot deposition substrate obtained in step (2) is immersed in the green light quantum dot electrodeposition solution obtained in step (1), and a reaction electrode made of silver is added to the green light quantum dot electrodeposition solution; On the dot deposition substrate, a negative DC voltage is applied to the transparent conductive unit of the green quantum dot deposition unit to be deposited, and a positive DC voltage is applied to the reaction electrode for 22.5 min under the action of a 9V electric field. On the transparent conductive unit, a green light quantum dot deposition unit is formed; the obtained quantum dot deposition substrate on which the green light quantum dot deposition unit has been deposited is taken out, and the green light quantum dot deposition unit is heated and cured at 80 °C;

Spraying on the obtained quantum dot deposition substrates of the cured red light quantum dot deposition unit and the green light quantum dot deposition unit, and freezing and curing encapsulation glue at -80°C to obtain a quantum dot deposition layer;

(4) The driving circuit, the Mini-LED matrix light source and the quantum dot deposition layer obtained in step (3) are stacked and assembled in sequence to form a quantum dot display device.

The quantum dot display device described in this embodiment can be used for Mini-LED displays, and has good application compatibility.

The evaluation results of the quantum dot display device described in this embodiment: the color gamut of the display device is 113%, which is larger than the color gamut range of NTSC; the light efficiency is improved by more than 30%.

Example 3

This embodiment provides a quantum dot display device, a preparation method and application thereof, the quantum dot display device comprises a driving circuit, a blue light source and a quantum dot deposition layer that are stacked in sequence; the blue light source is an OLED light-emitting layer; the The quantum dot deposition layer includes a quantum dot deposition substrate and three pixel units, a red quantum dot deposition unit, a green quantum dot deposition unit and a blue light transmission unit, which are uniformly arranged on the quantum dot deposition substrate; the quantum dot deposition substrate includes and the A transparent insulating base material made of polystyrene connected to the OLED light-emitting layer, and a transparent conductive unit made of aluminum doped zinc oxide, which is uniformly arranged on the transparent insulating base material and connected to the pixel unit; the transparent conductive unit is connected to the The pixel units are all two-dimensional strips.

The red light quantum dot material in the red light quantum dot deposition unit described in this embodiment is a core-shell structure, and the core-shell structure includes a layered Fe _0.3 In _0.7 P red light quantum dot core and an outer surface bonded with sodium dodecyl phosphate The SiO ₂ red light quantum dot coating layer of the ligand material, the ligand material generates negatively charged functional groups after being dissolved in the solution, and the particle size of the red light quantum dot core is 8.25 nm.

The green light quantum dot material in the green light quantum dot deposition unit described in this embodiment is a core-shell structure, and the core-shell structure includes a layered CuInS ₂ green light quantum dot core and an outer surface of SiO bonded with cetylpyridinium bromide. _2. The green quantum dot coating layer, the ligand material is dissolved in the solution to generate a positively charged functional group, and the particle size of the green quantum dot core is 4 nm.

(1) At 170°C, drop the silica sol red quantum dot coating solution into the solution containing Fe _0.3 In _0.7 P red quantum dot cores, so that SiO ₂ red is formed on the surface of the Fe _0.3 In _0.7 P red quantum dot cores Coating layer of optical quantum dots to obtain a solution containing core-shell type red light quantum dot materials; at 113 ° C, stirring for 8min to mix the obtained solution containing core-shell type red light quantum dot materials and sodium dodecyl phosphate ligand solution, so that SiO _2. The outer surface of the red light quantum dot coating layer is bonded with a sodium dodecyl phosphate ligand material to obtain a red light quantum dot electrodeposition solution;

At 170 °C, the silica sol green quantum dot coating solution was added dropwise to the solution containing the _CuInS green quantum dot core, so that the surface of the _CuInS green quantum dot core formed a _SiO green quantum dot coating to obtain a core containing The solution of shell-type green light quantum dot material; at 113 ° C, stirring for 8min to mix the obtained solution containing the core-shell type green light quantum dot material and cetyl pyridinium bromide ligand solution, so that the SiO ₂ green light quantum dot coating layer has The outer surface is bonded with a hexadecylpyridinium bromide ligand material to obtain a green light quantum dot electrodeposition solution;

(2) magnetron sputtering and photo-curing aluminum-doped zinc oxide on a transparent insulating base material made of polystyrene to obtain a first base material; dividing the surface of the aluminum-doped zinc oxide side of the obtained first base material Two-dimensional strip-shaped conductive area, spraying in the conductive area and heating and curing the anti-etching material containing chromium oxide epoxy glue at 100 ° C to obtain a second substrate; the surface of the anti-etching material of the second substrate obtained Laser etching is performed to remove the aluminum-doped zinc oxide outside the conductive area to obtain a third substrate; the anti-etching material of the obtained third substrate is peeled off, so that a two-dimensional strip-shaped transparent conductive material of aluminum-doped zinc oxide is formed in the conductive area unit to obtain a fourth substrate; after the obtained fourth substrate is cleaned by Plasma, a circuit is installed between each transparent conductive unit on the fourth substrate and a transparent conductive unit in an adjacent position to achieve electrical continuity , to obtain a quantum dot deposition substrate;

(3) immersing the quantum dot deposition substrate obtained in step (2) in the red light quantum dot electrodeposition solution obtained in step (1), and adding a reaction electrode made of gold to the red light quantum dot electrodeposition solution; On the quantum dot deposition substrate, a positive DC voltage is applied at the transparent conductive unit of the red light quantum dot deposition unit to be deposited, and a negative DC voltage is applied at the reaction electrode. Under the action of a 3V electric field, the red light quantum dot material is electrodeposited. On the corresponding transparent conductive unit, a red light quantum dot deposition unit is formed; the obtained quantum dot deposition substrate on which the red light quantum dot deposition unit has been deposited is taken out, and the red light quantum dot deposition unit is cured by light;

The quantum dot deposition substrate obtained in step (2) is immersed in the green light quantum dot electrodeposition solution obtained in step (1), and a reaction electrode made of gold is added to the green light quantum dot electrodeposition solution; On the dot deposition substrate, a negative DC voltage is applied at the transparent conductive unit of the green quantum dot deposition unit to be deposited, and a positive DC voltage is applied at the reaction electrode for 8 minutes under the action of a 3V electric field, and the green quantum dot material is electrodeposited on the corresponding electrode. On the transparent conductive unit, a green light quantum dot deposition unit is formed; the obtained quantum dot deposition substrate on which the green light quantum dot deposition unit has been deposited is taken out, and the green light quantum dot deposition unit is cured by light;

Spraying and photo-curing encapsulation glue on the obtained quantum dot deposition substrates of the cured red quantum dot deposition unit and the green quantum dot deposition unit to obtain a quantum dot deposition layer;

(4) The driving circuit, the OLED light-emitting layer and the quantum dot deposition layer obtained in step (3) are stacked and assembled in sequence to form a quantum dot display device.

The quantum dot display device described in this embodiment can be used in an OLED display, and has good application compatibility.

The evaluation results of the quantum dot display device in this embodiment: the color gamut value of the display device is 114%, which is larger than the color gamut range of NTSC; the light efficiency is improved by more than 30%.

Example 4

This embodiment provides a quantum dot display device, a preparation method and application thereof, the quantum dot display device includes a driving circuit, a blue light source and a quantum dot deposition layer that are stacked in sequence; the blue light source is an LED backlight; the The quantum dot deposition layer includes a quantum dot deposition substrate and three pixel units, a red quantum dot deposition unit, a green quantum dot deposition unit and a blue light transmission unit, which are uniformly arranged on the quantum dot deposition substrate; the quantum dot deposition substrate includes and the A transparent insulating substrate made of polycarbonate connected to the LED backlight source and a transparent conductive unit made of ITO film that is evenly arranged on the transparent insulating substrate and connected to the pixel unit; the transparent conductive unit and the pixel unit are both as a two-dimensional strip.

The red light quantum dot material in the red light quantum dot deposition unit described in this embodiment is a core-shell structure, and the core-shell structure includes a layered Fe _1.2 As _0.8 O _3.0 red light quantum dot core and an outer surface bonded with dodecyl trioxide The CuO red light quantum dot coating layer of the methylammonium chloride ligand material, the ligand material generates a positively charged functional group after being dissolved in a solution, and the particle size of the red light quantum dot core is 12 nm.

The green light quantum dot material in the green light quantum dot deposition unit described in this embodiment is a core-shell structure, and the core-shell structure includes a stacked AgInSe ₂ green light quantum dot core and a CuO green light quantum dot package with sodium oleate bonded to the outer surface. For the coating layer, the ligand material generates negatively charged functional groups after dissolving in the solution, and the particle size of the green quantum dot core is 3 nm.

(1) At 320°C, drop the copper sulfate red light quantum dot coating solution into the solution containing Fe _1.2 As _0.8 O _3.0 red light quantum dot cores, so that the surface of Fe _1.2 As _0.8 O _3.0 red light quantum dot cores forms CuO Red light quantum dot coating layer to obtain a solution containing core-shell type red light quantum dot material; at 180 ° C, stirring for 30min to obtain a solution containing core-shell type red light quantum dot material mixed with dodecyltrimethylammonium chloride. A bulk solution is used to bind the dodecyltrimethylammonium chloride ligand material to the outer surface of the CuO red quantum dot coating layer to obtain a red quantum dot electrodeposition solution;

At 320°C, the copper sulfate green light quantum dot coating layer solution was added dropwise to the solution containing the AgInSe ₂ green light quantum dot core, so that the surface of the AgInSe ₂ green light quantum dot core formed a CuO green light quantum dot coating layer to obtain a core-shell type The solution of green quantum dot material; at 180 ℃, stirring for 30min to mix the solution containing the core-shell type green quantum dot material and the sodium oleate ligand solution, so that the outer surface of the CuO green quantum dot coating layer is bound with sodium oleate Ligand material to obtain green quantum dot electrodeposition solution;

(2) vacuum evaporation and photo-curing ITO film on a transparent insulating base material of polycarbonate material to obtain a first base material; a two-dimensional strip-shaped conductive area is divided on one side surface of the ITO film of the obtained first base material, Vacuum evaporation in the conductive area and heating and curing the acrylic resin anti-etching material at 100°C to obtain a second substrate; perform hydrofluoric acid etching on the surface of the anti-etching material side of the obtained second substrate to remove the conductive area The external ITO film is obtained to obtain a third base material; the anti-etching material of the obtained third base material is peeled off, so that a transparent conductive unit of two-dimensional strip-shaped ITO film material is formed in the conductive area to obtain a fourth base material; the obtained fourth base material After the material is cleaned with ethanol, a circuit is installed between each transparent conductive unit on the fourth substrate and a transparent conductive unit in an adjacent position to achieve electrical conduction, and a quantum dot deposition substrate is obtained;

(3) immersing the quantum dot deposition substrate obtained in step (2) in the red light quantum dot electrodeposition solution obtained in step (1), and adding a reaction electrode made of copper to the red light quantum dot electrodeposition solution; On the quantum dot deposition substrate, a negative DC voltage is applied at the transparent conductive unit of the red light quantum dot deposition unit to be deposited, and a positive DC voltage is applied at the reaction electrode. Under the action of a 12V electric field, the red light quantum dot material is electrodeposited On the corresponding transparent conductive unit, a red light quantum dot deposition unit is formed; the obtained quantum dot deposition substrate on which the red light quantum dot deposition unit has been deposited is taken out, and the red light quantum dot deposition unit is cured by light;

The quantum dot deposition substrate obtained in step (2) is immersed in the green light quantum dot electrodeposition solution obtained in step (1), and a reaction electrode made of copper is added to the green light quantum dot electrodeposition solution; On the dot deposition substrate, a positive DC voltage is applied to the transparent conductive unit of the green quantum dot deposition unit to be deposited, and a negative DC voltage is applied to the reaction electrode for 30 minutes under the action of a 12V electric field, and the green quantum dot material is electrodeposited on the corresponding electrode. On the transparent conductive unit, a green light quantum dot deposition unit is formed; the obtained quantum dot deposition substrate on which the green light quantum dot deposition unit has been deposited is taken out, and the green light quantum dot deposition unit is cured by light;

(4) The driving circuit, the LED backlight source and the quantum dot deposition layer obtained in step (3) are sequentially stacked and assembled into one body to obtain a quantum dot display device.

The quantum dot display device described in this embodiment can be used in an LCD display, and has good application compatibility.

The evaluation results of the quantum dot display device in this embodiment: the color gamut value of the display device is 112%, which is larger than the color gamut range of NTSC; the light efficiency is improved by more than 25%.

Example 5

The present embodiment provides a quantum dot display device, a preparation method and application thereof. The quantum dot display device includes a driving circuit, a blue light source and a quantum dot deposition layer that are stacked in sequence; the blue light source is a plasma light-emitting layer; the The quantum dot deposition layer includes a quantum dot deposition substrate and three pixel units, a red quantum dot deposition unit, a green quantum dot deposition unit and a blue light transmission unit, which are uniformly arranged on the quantum dot deposition substrate; the quantum dot deposition substrate includes and the A transparent insulating substrate made of styrene acrylonitrile connected to the plasma light-emitting layer and a transparent conductive unit of aluminum-doped zinc oxide material uniformly arranged on the transparent insulating substrate and connected to the pixel unit; the transparent conductive unit is connected to the The pixel units are all one-dimensional dots.

The red light quantum dot material in the red light quantum dot deposition unit described in this embodiment has a core-shell structure, and the core-shell structure includes a layered CsPbI ₃ red light quantum dot core and a PVDF with an ethanolamine hydrochloride ligand material bonded to the outer surface. The red light quantum dot coating layer, the ligand material generates a positively charged functional group after being dissolved in the solution, and the particle size of the red light quantum dot core is 7 nm.

The green light quantum dot material in the green light quantum dot deposition unit described in this embodiment is a core-shell structure, and the core-shell structure includes a layered MgSe _0.9 S _0.1 green light quantum dot core and an outer surface bonded with sodium dodecyl sulfate. The coating layer of PVDF green light quantum dots, the ligand material generates negatively charged functional groups after dissolving in the solution, and the particle size of the core of the green light quantum dots is 3 nm.

(1) At 120°C, drop the PVDF red quantum dot coating solution into the solution containing the CsPbI ₃ red quantum dot core, so that the surface of the CsPbI ₃ red quantum dot core forms a PVDF red quantum dot coating layer to obtain a solution containing Solution of core-shell type red quantum dot material; at 90 ℃, stirring for 0.5min to mix the obtained solution containing core-shell type red quantum dot material and ethanolamine hydrochloride ligand solution, so that the outer surface of PVDF red quantum dot coating layer Bonding ethanolamine hydrochloride ligand material to obtain red light quantum dot electrodeposition solution;

At 120 °C, the PVDF green quantum dot coating layer solution was added dropwise to the solution containing the MgSe _0.9 S _0.1 green quantum dot core, so that the surface of the MgSe _0.9 S _0.1 green quantum dot core formed a PVDF green quantum dot coating layer to obtain The solution containing the core-shell type green quantum dot material; at 90 ℃, stirring for 0.5min to mix the obtained solution containing the core-shell type green quantum dot material and the sodium dodecyl sulfate ligand solution to make the PVDF green light quantum dot coating layer The outer surface of the compound is bonded with a sodium dodecyl sulfate ligand material to obtain a green quantum dot electrodeposition solution;

(2) spraying and photo-curing aluminum-doped zinc oxide on a transparent insulating substrate made of styrene acrylonitrile to obtain a first substrate; dividing a one-dimensional surface on the surface of the aluminum-doped zinc oxide side of the obtained first substrate Point-shaped conductive area, spraying in the conductive area and heating and curing the phenolic resin anti-etching material at 100 ° C to obtain a second base material; performing hydrofluoric acid etching on the surface of the anti-etching material side of the obtained second base material, Remove the aluminum-doped zinc oxide outside the conductive area to obtain a third substrate; peel off the anti-etching material of the obtained third substrate to form a one-dimensional point-shaped transparent conductive unit of aluminum-doped zinc oxide material in the conductive area to obtain the first substrate Four substrates; after the obtained fourth substrate is washed with distilled water, a circuit is installed between each transparent conductive unit on the fourth substrate and a transparent conductive unit in an adjacent position to achieve electrical conduction, and quantum dots are obtained deposition substrate;

(3) immersing the quantum dot deposition substrate obtained in step (2) in the red light quantum dot electrodeposition solution obtained in step (1), and adding a reaction electrode made of silver to the red light quantum dot electrodeposition solution; On the quantum dot deposition substrate, a negative DC voltage is applied at the transparent conductive unit of the red light quantum dot deposition unit to be deposited, and a positive DC voltage is applied at the reaction electrode. Under the action of a 1V electric field, the red light quantum dot material is electrodeposited On the corresponding transparent conductive unit, a red light quantum dot deposition unit is formed; the obtained quantum dot deposition substrate on which the red light quantum dot deposition unit has been deposited is taken out, and the red light quantum dot deposition unit is cured by light;

The quantum dot deposition substrate obtained in step (2) is immersed in the green light quantum dot electrodeposition solution obtained in step (1), and a reaction electrode made of silver is added to the green light quantum dot electrodeposition solution; On the dot deposition substrate, a positive DC voltage is applied to the transparent conductive unit of the green quantum dot deposition unit to be deposited, and a negative DC voltage is applied to the reaction electrode for 1min under the action of an electric field of 1V, and the green quantum dot material is electrodeposited on the corresponding electrode. On the transparent conductive unit, a green light quantum dot deposition unit is formed; the obtained quantum dot deposition substrate on which the green light quantum dot deposition unit has been deposited is taken out, and the green light quantum dot deposition unit is cured by light;

Spin-coating and photo-curing encapsulation glue on the obtained quantum dot deposition substrates of the cured red light quantum dot deposition unit and the green light quantum dot deposition unit to obtain a quantum dot deposition layer;

(4) The driving circuit, the plasma light emitting layer and the quantum dot deposition layer obtained in step (3) are stacked and assembled in sequence to form a quantum dot display device.

The quantum dot display device described in this embodiment can be used in plasma displays, and has good application compatibility.

The evaluation results of the quantum dot display device in this embodiment: the color gamut value of the display device is 112%, which is larger than the color gamut range of NTSC; the light efficiency is improved by more than 20%.

Example 6

This embodiment provides a quantum dot display device and a preparation method and application thereof. The quantum dot display device and application are the same as those in Embodiment 1. In the preparation method, except that the DC voltage in step (3) is 15V, The remaining conditions are the same as those in Example 1, so they are not repeated here.

Compared with Example 1, the quantum dot deposition layer obtained by the preparation method described in this example has no obvious difference, but the increase of the electric field intensity is likely to cause waste of resources.

Example 7

This embodiment provides a quantum dot display device and a preparation method and application thereof. The quantum dot display device and application are the same as those in Embodiment 1, except that the DC voltage in step (3) is 0.8V. , and other conditions are the same as in Example 1, so they are not repeated here.

Compared with Example 1, the deposition layer of quantum dots obtained by the preparation method described in this example is not completely deposited, so the display effect of the display device is likely to be adversely affected.

Example 8

This embodiment provides a quantum dot display device and a preparation method and application thereof. The quantum dot display device and application are the same as those in Embodiment 1, except that the electrodeposition time in step (3) is 50 min. , and other conditions are the same as in Example 1, so they are not repeated here.

Compared with Example 1, the quantum dot deposition layer obtained by the preparation method described in this example has no obvious difference, but the prolongation of electrodeposition time is likely to cause waste of resources.

Example 9

This embodiment provides a quantum dot display device and a preparation method and application thereof. The quantum dot display device and application are the same as those in Embodiment 1, except that the electrodeposition time in step (3) is 0.8 min. In addition, other conditions are the same as in Example 1, so do not repeat them here.

Comparative Example 1

This comparative example provides a display device, the display device includes a driving circuit, a white light source and a color filter that are stacked in sequence; the driving circuit is used to control the opening and closing and brightness adjustment of the white light source; the white light The light source provides incident white light for the color filter; the color filter includes a red filter, a green filter and a blue filter, and the red filter, the green filter and the blue filter The areas of the filters were all 500 μm ² .

In the display device provided by this comparative example, the white light emitted by the white light backlight source is independently converted into red light, green light and blue light through the red filter, green filter and blue filter in the color filter. , composite to achieve color display.

Compared with Example 1, Comparative Example 1 uses a color filter to convert white light into red light, green light and blue light. The color purity of the converted light is not high, the display color gamut is narrow, and this process will cause the light transmission rate. And the reduction of light efficiency increases the overall power consumption of the display device; in addition, the color filter is not pixel-level size, thereby reducing the resolution of the display device.

Comparative Example 2

This comparative example provides a preparation method of a quantum dot display device, and the preparation method comprises the following steps:

(1) Preparation of quantum dot solution;

(2) preparing a quantum dot substrate;

(3) using a microliter burette to drop the quantum dot solution prepared in step (1) on the surface of the quantum dot substrate prepared in step (2), and curing the quantum dots after spin coating;

(4) The driving circuit, the blue light source and the quantum dot substrate with the cured quantum dots prepared in step (3) are stacked and assembled in sequence to form a quantum dot display device.

Compared with Example 1, the preparation method described in Comparative Example 2 does not use the electrodeposition method to prepare the quantum dot deposition layer, but uses the spin coating method to cure the quantum dots. This process requires high precision, and the red quantum dots and green quantum dots are The dots are coated together, and a filter needs to be added for later use, which will reduce the light transmission rate and light efficiency, thereby increasing the overall power consumption of the display device.

To sum up, in the quantum dot display device provided by the present application, the red light quantum dot deposition unit and the green light quantum dot deposition unit in the quantum dot deposition layer are excited by the blue light emitted by the blue light source to emit red light and green light independently, respectively, The blue light transmitted by the blue light transmission unit is compounded, thereby realizing color display; the red light quantum dot deposition unit, the green light quantum dot deposition unit and the blue light transmission unit described in this application are all pixel-level sizes, with high display resolution, and three types of pixels. The units are arranged separately and independently, and the red light, green light and blue light are emitted independently, so the filter can be eliminated, thereby improving the light transmission rate and light efficiency, and reducing the overall power consumption of the display device; this application uses electrodeposition reaction to prepare quantum The dot deposition layer realizes the pixel-level coating of quantum dot materials, and the process is simple, the manufacturing cost is low, and mass production can be realized; the quantum dot display device provided in this application can be used for LCD displays, OLED displays, Mini-LED displays, Various display devices such as Micro-LED displays, plasma displays or semiconductor laser displays, and have good application compatibility.

The applicant declares that the above descriptions are only specific embodiments of the present application, but the protection scope of the present application is not limited thereto.

Claims

A quantum dot display device, comprising a driving circuit, a blue light source and a quantum dot deposition layer that are stacked in sequence;

The driving circuit is used to control the opening and closing and brightness adjustment of the blue light source;

The quantum dot deposition layer includes a quantum dot deposition substrate and at least two pixel units uniformly arranged on the quantum dot deposition substrate;

the blue light source provides excitation blue light for the pixel unit;

The pixel unit includes a red light quantum dot deposition unit, a green light quantum dot deposition unit and a blue light transmission unit.
The quantum dot display device according to claim 1, wherein the blue light source comprises any one or a combination of at least two of a point light source, a line light source or a surface light source.
The quantum dot display device according to claim 1 or 2, wherein the quantum dot deposition substrate comprises a transparent insulating substrate and at least two transparent conductive units uniformly arranged on the transparent insulating substrate.
The quantum dot display device according to claim 3, wherein the transparent insulating substrate is connected to the blue light source;

Optionally, the transparent conductive unit is connected to the pixel unit;

Optionally, the transparent conductive unit is electrically connected with at least one transparent conductive unit in an adjacent position;

Optionally, the transparent insulating substrate comprises any one or at least one of glass, polymethyl methacrylate, polystyrene, polycarbonate, styrene acrylonitrile or styrene-methyl methacrylate copolymer a combination of the two;

Optionally, the transparent conductive unit and the pixel unit are both one-dimensional dots and/or two-dimensional strips;

Optionally, the material of the transparent conductive unit includes any one or a combination of at least two of ITO film, transparent conductive glass or aluminum-doped zinc oxide.
The quantum dot display device according to any one of claims 1-4, wherein the red light quantum dot material is a core-shell structure, and the core-shell structure comprises a red light quantum dot core and a red light quantum dot coating layer arranged in layers ;

Optionally, the particle diameter of the red light quantum dot core is 7-12nm;

Optionally, the outer surface of the red light quantum dot coating layer is bound with a first ligand material, and the first ligand material is an organic salt substance containing ionic bonds;

Optionally, the green light quantum dot material is a core-shell structure, and the core-shell structure includes a green light quantum dot core and a green light quantum dot coating layer that are arranged in layers;

Optionally, the particle size of the green quantum dot core is 3-7nm;

Optionally, the outer surface of the green light quantum dot coating layer is bound with a second ligand material, and the second ligand material is an organic salt substance containing ionic bonds.
A preparation method of a quantum dot display device as claimed in any one of claims 1-5, comprising the following steps:

(1) Preparation of quantum dot electrodeposition solution;

(2) preparing a quantum dot deposition substrate;

(3) immersing the quantum dot deposition substrate prepared in step (2) in the quantum dot electrodeposition solution prepared in step (1) to carry out an electrodeposition reaction to prepare a quantum dot deposition layer;

(4) The driving circuit, the blue light source and the quantum dot deposition layer obtained in step (3) are stacked and assembled in sequence to form a quantum dot display device.
preparation method according to claim 6, wherein, the concrete steps of step (1) are as follows:

a. Mix the solution containing the quantum dot core and the quantum dot coating layer solution to form a quantum dot coating layer on the surface of the quantum dot core to obtain a solution containing the core-shell quantum dot material;

b. Mixing the solution containing the core-shell quantum dot material and the ligand solution obtained in step a, so that the outer surface of the quantum dot coating layer is bound with the ligand material to obtain a quantum dot electrodeposition solution.
preparation method according to claim 7, wherein, the concrete steps of step (2) are as follows:

c. Coating and curing a transparent conductive material on a transparent insulating substrate to obtain a first substrate;

d. dividing at least 2 conductive regions on the surface of the transparent conductive material of the first substrate obtained in step c, coating and curing the anti-etching material in the conductive regions to obtain a second substrate;

E. etch the anti-etching material side surface of the second base material obtained in step d, and remove the transparent conductive material outside the conductive area to obtain a third base material;

f. peeling off the anti-etching material of the third base material obtained in step e, so that a transparent conductive unit is formed in the conductive area to obtain a fourth base material;

g. After cleaning the fourth substrate obtained in step f, a circuit is installed between the transparent conductive unit on the fourth substrate and at least one transparent conductive unit in an adjacent position to achieve electrical continuity, thereby obtaining a quantum dot deposition substrate.
preparation method according to claim 8, wherein, the concrete steps of step (3) are as follows:

h. immersing the quantum dot deposition substrate prepared in step (2) in the quantum dot electrodeposition solution prepared in step (1), and adding a reaction electrode to the quantum dot electrodeposition solution;

i. Apply a DC voltage opposite to that charged by the ligand material at the transparent conductive unit of the quantum dot deposition unit to be deposited on the quantum dot deposition substrate, and apply the same charge as the ligand material at the reaction electrode. DC voltage, under the action of the electric field, the quantum dot material is electrodeposited on the corresponding transparent conductive unit to form a quantum dot deposition unit;

j. taking out the quantum dot deposition substrate of the deposited quantum dot deposition unit obtained in step i, and curing the quantum dot deposition unit;

k. Coating and curing encapsulation glue on the quantum dot deposition substrate of the cured quantum dot deposition unit obtained in step j, to obtain a quantum dot deposition layer.
The preparation method according to any one of claims 6-9, wherein the preparation method comprises the following steps:

(1) mixing the solution containing the quantum dot core and the quantum dot coating layer solution to form a quantum dot coating layer on the surface of the quantum dot core to obtain a solution containing the core-shell type quantum dot material; mixing the obtained solution containing the core-shell type quantum dot material The solution and the ligand solution are obtained, so that the outer surface of the quantum dot coating layer is bonded with the ligand material, and the quantum dot electrodeposition solution is obtained;

(2) coating and curing a transparent conductive material on a transparent insulating substrate to obtain a first substrate; at least two conductive regions are divided on the surface of the transparent conductive material side of the obtained first substrate, and within the conductive regions coating and curing the anti-etching material to obtain a second base material; etching the surface of one side of the anti-etching material of the obtained second base material to remove the transparent conductive material outside the conductive area to obtain a third base material; peeling off the obtained third base material The anti-etching material of the material is used to form a transparent conductive unit in the conductive area to obtain a fourth substrate; after cleaning the obtained fourth substrate, each transparent conductive unit on the fourth substrate and at least one adjacent position A circuit is installed between one transparent conductive unit to achieve electrical conduction, and a quantum dot deposition substrate is obtained;

(3) immersing the quantum dot deposition substrate obtained in step (2) in the quantum dot electrodeposition solution obtained in step (1), and adding a reaction electrode to the quantum dot electrodeposition solution; A DC voltage opposite to that charged by the ligand material is applied to the transparent conductive unit of the quantum dot deposition unit to be deposited on the substrate, and a DC voltage that is the same as that charged by the ligand material is applied to the reaction electrode, under the action of the electric field , the quantum dot material is electrodeposited on the corresponding transparent conductive unit to form a quantum dot deposition unit; the obtained quantum dot deposition substrate of the deposited quantum dot deposition unit is taken out, and the quantum dot deposition unit is cured; coating and curing encapsulation glue on the quantum dot deposition substrate of the unit to obtain a quantum dot deposition layer;

(4) The driving circuit, the blue light source and the quantum dot deposition layer obtained in step (3) are stacked and assembled in sequence to form a quantum dot display device.
An application of the quantum dot display device according to any one of claims 1-5, wherein the application includes using the quantum dot display device for LCD displays, OLED displays, Mini-LED displays, Micro-LED displays Display, plasma display or semiconductor laser display.