CN112635695B - Quantum dot luminescent layer and preparation method and application thereof - Google Patents
Quantum dot luminescent layer and preparation method and application thereof Download PDFInfo
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- 239000002096 quantum dot Substances 0.000 title claims abstract description 252
- 238000002360 preparation method Methods 0.000 title claims abstract description 32
- 238000000151 deposition Methods 0.000 claims abstract description 62
- 230000008021 deposition Effects 0.000 claims abstract description 62
- 239000000758 substrate Substances 0.000 claims abstract description 59
- 238000000034 method Methods 0.000 claims abstract description 53
- 238000006243 chemical reaction Methods 0.000 claims abstract description 29
- 239000013067 intermediate product Substances 0.000 claims abstract description 27
- 150000003839 salts Chemical class 0.000 claims abstract description 23
- 239000006087 Silane Coupling Agent Substances 0.000 claims abstract description 15
- 238000004070 electrodeposition Methods 0.000 claims abstract description 15
- 238000004519 manufacturing process Methods 0.000 claims abstract description 9
- 239000000463 material Substances 0.000 claims description 58
- 229910052751 metal Inorganic materials 0.000 claims description 32
- 239000002184 metal Substances 0.000 claims description 32
- 238000005530 etching Methods 0.000 claims description 24
- 239000003292 glue Substances 0.000 claims description 23
- CCCMONHAUSKTEQ-UHFFFAOYSA-N octadecene Natural products CCCCCCCCCCCCCCCCC=C CCCMONHAUSKTEQ-UHFFFAOYSA-N 0.000 claims description 12
- 239000011248 coating agent Substances 0.000 claims description 11
- 238000000576 coating method Methods 0.000 claims description 11
- VMHLLURERBWHNL-UHFFFAOYSA-M Sodium acetate Chemical compound [Na+].CC([O-])=O VMHLLURERBWHNL-UHFFFAOYSA-M 0.000 claims description 10
- 235000017281 sodium acetate Nutrition 0.000 claims description 10
- 239000001632 sodium acetate Substances 0.000 claims description 10
- 238000004140 cleaning Methods 0.000 claims description 9
- 238000002156 mixing Methods 0.000 claims description 8
- 238000004806 packaging method and process Methods 0.000 claims description 8
- 238000001723 curing Methods 0.000 claims description 6
- 239000011521 glass Substances 0.000 claims description 6
- 229910001507 metal halide Inorganic materials 0.000 claims description 6
- 150000005309 metal halides Chemical class 0.000 claims description 6
- 229910044991 metal oxide Inorganic materials 0.000 claims description 6
- 150000004706 metal oxides Chemical class 0.000 claims description 6
- 229910052976 metal sulfide Inorganic materials 0.000 claims description 6
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 claims description 6
- 150000004767 nitrides Chemical class 0.000 claims description 6
- 150000003346 selenoethers Chemical class 0.000 claims description 6
- 238000005507 spraying Methods 0.000 claims description 6
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 claims description 6
- 238000005538 encapsulation Methods 0.000 claims description 5
- SNRUBQQJIBEYMU-UHFFFAOYSA-N dodecane Chemical compound CCCCCCCCCCCC SNRUBQQJIBEYMU-UHFFFAOYSA-N 0.000 claims description 4
- FWDBOZPQNFPOLF-UHFFFAOYSA-N ethenyl(triethoxy)silane Chemical compound CCO[Si](OCC)(OCC)C=C FWDBOZPQNFPOLF-UHFFFAOYSA-N 0.000 claims description 4
- 150000002902 organometallic compounds Chemical class 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- SIOXPEMLGUPBBT-UHFFFAOYSA-M picolinate Chemical compound [O-]C(=O)C1=CC=CC=N1 SIOXPEMLGUPBBT-UHFFFAOYSA-M 0.000 claims description 4
- QDRKDTQENPPHOJ-UHFFFAOYSA-N sodium ethoxide Chemical compound [Na+].CC[O-] QDRKDTQENPPHOJ-UHFFFAOYSA-N 0.000 claims description 4
- HSFQBFMEWSTNOW-UHFFFAOYSA-N sodium;carbanide Chemical group [CH3-].[Na+] HSFQBFMEWSTNOW-UHFFFAOYSA-N 0.000 claims description 4
- 229910052717 sulfur Inorganic materials 0.000 claims description 4
- JRMUNVKIHCOMHV-UHFFFAOYSA-M tetrabutylammonium bromide Chemical compound [Br-].CCCC[N+](CCCC)(CCCC)CCCC JRMUNVKIHCOMHV-UHFFFAOYSA-M 0.000 claims description 4
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 3
- 230000035484 reaction time Effects 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- QGLWBTPVKHMVHM-KTKRTIGZSA-N (z)-octadec-9-en-1-amine Chemical compound CCCCCCCC\C=C/CCCCCCCCN QGLWBTPVKHMVHM-KTKRTIGZSA-N 0.000 claims description 2
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 claims description 2
- 239000004593 Epoxy Substances 0.000 claims description 2
- 239000004793 Polystyrene Substances 0.000 claims description 2
- 238000003486 chemical etching Methods 0.000 claims description 2
- NKSJNEHGWDZZQF-UHFFFAOYSA-N ethenyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)C=C NKSJNEHGWDZZQF-UHFFFAOYSA-N 0.000 claims description 2
- WOXXJEVNDJOOLV-UHFFFAOYSA-N ethenyl-tris(2-methoxyethoxy)silane Chemical compound COCCO[Si](OCCOC)(OCCOC)C=C WOXXJEVNDJOOLV-UHFFFAOYSA-N 0.000 claims description 2
- 229940057995 liquid paraffin Drugs 0.000 claims description 2
- -1 liquid paraffin Natural products 0.000 claims description 2
- 150000002736 metal compounds Chemical class 0.000 claims description 2
- XTAZYLNFDRKIHJ-UHFFFAOYSA-N n,n-dioctyloctan-1-amine Chemical compound CCCCCCCCN(CCCCCCCC)CCCCCCCC XTAZYLNFDRKIHJ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 claims description 2
- 229910052698 phosphorus Inorganic materials 0.000 claims description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 2
- 239000004417 polycarbonate Substances 0.000 claims description 2
- 229920000515 polycarbonate Polymers 0.000 claims description 2
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 2
- 229920002223 polystyrene Polymers 0.000 claims description 2
- 239000004814 polyurethane Substances 0.000 claims description 2
- 229920002635 polyurethane Polymers 0.000 claims description 2
- 239000002904 solvent Substances 0.000 claims description 2
- 238000004528 spin coating Methods 0.000 claims description 2
- 238000002834 transmittance Methods 0.000 claims description 2
- 238000007738 vacuum evaporation Methods 0.000 claims description 2
- 238000005406 washing Methods 0.000 claims 4
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 claims 1
- 238000010923 batch production Methods 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 29
- 230000000052 comparative effect Effects 0.000 description 12
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical group [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 9
- 229920002120 photoresistant polymer Polymers 0.000 description 8
- 238000010586 diagram Methods 0.000 description 5
- 238000000059 patterning Methods 0.000 description 5
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 4
- 239000012528 membrane Substances 0.000 description 4
- 239000012788 optical film Substances 0.000 description 3
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000011056 performance test Methods 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- YBNMDCCMCLUHBL-UHFFFAOYSA-N (2,5-dioxopyrrolidin-1-yl) 4-pyren-1-ylbutanoate Chemical group C=1C=C(C2=C34)C=CC3=CC=CC4=CC=C2C=1CCCC(=O)ON1C(=O)CCC1=O YBNMDCCMCLUHBL-UHFFFAOYSA-N 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 239000003999 initiator Substances 0.000 description 1
- 229920000554 ionomer Polymers 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000001748 luminescence spectrum Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000016 photochemical curing Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
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- Optics & Photonics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Nanotechnology (AREA)
- Luminescent Compositions (AREA)
Abstract
The invention provides a quantum dot luminescent layer, a preparation method and application thereof, wherein the preparation method comprises the following steps: (1) Reacting the core quantum dot solution with a silane coupling agent to obtain an intermediate product, and reacting the intermediate product with an organic salt to obtain a charged core quantum dot deposition solution; (2) Placing the substrate in the charged core quantum dot deposition solution obtained in the step (1) for electrodeposition to obtain a core quantum dot deposition substrate; (3) And (3) reacting the core quantum dot deposition substrate obtained in the step (2) to obtain the quantum dot luminescent layer. The preparation method has simple overall process and low manufacturing cost; the obtained quantum dot luminescent layer can realize pixel-level quantum dot arrangement, has the advantages of high display resolution, high light conversion efficiency, high luminous efficiency and the like, and can realize batch production.
Description
Technical Field
The invention belongs to the technical field of display, and particularly relates to a quantum dot luminescent layer, and a preparation method and application thereof.
Background
With the continuous development of display technology, the display quality requirements of display devices are also increasing. The particle size of the Quantum Dot (QD) material is generally between 1 and 10nm, and the continuous energy band structure is changed into a discrete energy level structure due to the Quantum confinement of electrons and holes, so that the luminescence spectrum is very narrow (20 to 30 nm), the chromaticity is pure and high, the display color gamut is wide, and the color gamut range can be greatly exceeded the color gamut range of the national television standards committee (National Television Standards Committee, NTSC); meanwhile, the quantum dot material has small light absorption loss through the color filter, and low-power consumption display can be realized. Thus, quantum dot materials are increasingly becoming a new generation of luminescent materials in LED display applications.
The quantum dot luminescent layer excites green light and red light of partial wave bands by absorbing blue light of partial wave bands, so that the color gamut of the display screen can be effectively improved, and the requirement of high-quality display application is met. CN102944943a discloses a quantum dot color filter, a liquid crystal panel and a display device, which comprise a color filter formed by quantum dot materials to form a display, wherein a red light filter, a green light filter or a blue light filter is made of quantum dot materials capable of generating red light, green light or blue light through light excitation, so that the utilization rate of a backlight source can be improved, and meanwhile, color light with higher purity is obtained, so that the quantum dot display can realize high color gamut and low power consumption of color display, but a method for patterning a quantum dot layer is not described.
The current imaging method of most quantum dot layers is to disperse quantum dots in photoresist, and then realize quantum dot light conversion material coating on a specific area of a substrate by means of light curing, etching and the like. CN103226260a discloses a liquid crystal display, a display device and a method for patterning a quantum dot layer, which provides a method for dispersing quantum dots in photoresist and patterning the quantum dot layer by a photolithography process, wherein the prepared quantum dot layer replaces the existing color resin to be used as a color filter to convert background light into monochromatic light, and has the advantages of high luminous efficiency, wide color gamut, high color saturation and the like; however, the quantum dots are dispersed in the photoresist, and the surface chemical environment of the quantum dots is complex due to the fact that the photoresist is provided with various high polymer materials such as an initiator, a polymer monomer, a polymer, an additive and the like, so that the luminous efficiency of the quantum dots is greatly affected. CN105355726a discloses a method for patterning a quantum dot layer and a method for preparing a quantum dot color film, wherein a photoresist layer with a pattern structure is used as a shielding layer, and a monochromatic quantum dot layer is etched to obtain a patterned quantum dot layer; according to the quantum dot color film prepared by the quantum dot layer patterning method, the prepared quantum dot color film has a fine quantum dot pattern, the luminous efficiency of the quantum dots is high, the resolution ratio and the backlight utilization ratio of a display device are further effectively improved, but the method is complex in technological process, high in production cost, high in equipment capacity and precision requirements, and pixel-level quantum dot arrangement is difficult to realize.
Therefore, developing a preparation method of a quantum dot luminescent layer with simple process and low production cost, obtaining a quantum dot luminescent layer with high light conversion efficiency, high display resolution and low efficacy is a key point of research of technicians in the field.
Disclosure of Invention
Aiming at the defects of the prior art, the invention aims to provide a quantum dot luminescent layer, a preparation method and application thereof, wherein a core quantum dot is reacted with a silane coupling agent to obtain an intermediate product, the intermediate product is reacted with organic salt to obtain a core quantum dot deposition solution, and the core quantum dot deposition solution is electrodeposited on a substrate under specific conditions to prepare the quantum dot luminescent layer with high light conversion efficiency, high display resolution and low efficacy.
In order to achieve the aim of the invention, the invention adopts the following technical scheme:
in a first aspect, the present invention provides a method for preparing a quantum dot light emitting layer, the method comprising the steps of:
(1) Reacting the core quantum dot solution with a silane coupling agent to obtain an intermediate product, and reacting the intermediate product with an organic salt to respectively obtain a charged red light core quantum dot deposition solution, a charged green light core quantum dot deposition solution and a charged blue light core quantum dot deposition solution;
(2) Respectively placing the substrate in the charged red light core quantum dot deposition solution, the charged green light core quantum dot deposition solution and the charged blue light core quantum dot deposition solution obtained in the step (1) for electrodeposition to obtain a core quantum dot deposition substrate;
(3) And (3) reacting the core quantum dot deposition substrate obtained in the step (2) to obtain the quantum dot luminescent layer.
In the preparation method of the quantum dot luminescent layer provided by the invention, an exemplary reaction structure schematic diagram of the step (1) is shown in fig. 1, wherein 1 represents a core quantum dot; 2 represents an intermediate; 3 represents a charged core quantum dot; firstly, reacting the core quantum dots 1 with a silane coupling agent to obtain an intermediate product 2; then, the intermediate product 2 is reacted with an organic salt to obtain the charged core quantum dot 3. Schematically, a schematic diagram of the electrodeposition process when the core quantum dot is positively charged is shown in fig. 2: wherein 3 represents charged core quantum dots, 4 represents a substrate, and 5 represents a reaction electrode; the core quantum dots on the final substrate react under specific conditions to obtain the quantum dot deposition layer, and a schematic process of the reaction of the core quantum dots into the quantum dot material is shown in fig. 3: wherein 3 represents a charged core quantum dot and 6 represents a charged quantum dot luminescent material. According to the invention, core quantum dots and a silane coupling agent are selected to react reversely to obtain an intermediate product, then the intermediate product and organic salt are subjected to bonding reaction, so that the core quantum dots with charges are more easily obtained, further a core quantum dot deposition solution is electrodeposited on a substrate, and then the core quantum dots react to generate a quantum dot luminescent material, so that the quantum dot luminescent material has the advantages of high deposition rate and high material utilization rate, and the prepared quantum dot luminescent layer has high light conversion efficiency and high display resolution.
Preferably, the core quantum dot of step (1) comprises any one or a combination of at least two of a metal oxide, a metal halide, a metal nitride, a metal sulfide, a metal phosphide, a metal selenide, a metal telluride, a metal arsenide, or an organometallic compound.
Preferably, the metal in the metal oxide, metal halide, metal nitride, metal sulfide, metal phosphide, metal selenide, metal telluride, metal arsenide, or organometallic compound each independently comprises any one of Ba, ca, ag, na, fe, in, cd, zn, ga, mg, ti, zr, pb or Cs or a combination of at least two thereof.
Preferably, the core quantum dot comprises CdS, cdTe, cdSe, znSe, znS, znTe, pbSe, pbS, cuInS 2 、AgInS 2 、CuZnInS 2 、InP、CsPbBr 3 、CsPbCl 3 、CsPbI 3 、CH 3 NH 3 PbBr 3 、MAPbCl 3 Or MAPbI 3 Any one or a combination of at least two of these.
Preferably, the core quantum dots are prepared by a solution method.
Preferably, the solvent of the core quantum dot solution in the step (1) comprises any one or a combination of at least two of octadecene, trioctylamine, oleylamine, liquid paraffin, dodecane, octane or hexane.
Preferably, the molar mass of the core quantum dots is 0.25 to 5mol, for example 0.5mol, 0.75mol, 1mol, 1.25mol, 1.5mol, 1.75mol, 2mol, 2.25mol, 2.5mol, 2.75mol, 3mol, 3.25mol, 3.5mol, 3.75mol, 4mol, 4.25mol, 4.5mol, 4.75mol, 5mol, 5.25mol, 5.5mol or 5.75mol, and the specific point values between the above point values, based on 1L of the core quantum dot solution, are limited in length and the present invention does not exhaustively list the specific point values included in the range for conciseness.
Preferably, the silane coupling agent of step (1) comprises any one or a combination of at least two of vinyltriethoxysilane, vinyltrimethoxysilane or vinyltris (β -methoxyethoxy) silane.
Preferably, the organic salt in step (1) is an ionomer organic salt.
Preferably, the organic salt in step (1) comprises any one or a combination of at least two of sodium acetate, tetrabutylammonium bromide, picolinate, sodium methyl or sodium ethoxide.
Preferably, the molar ratio of the core quantum dot to the silane coupling agent in step (1) is 1 (0.02-0.5), such as 1:0.05, 10.07, 10.1, 10.12, 1:0.15, 1:0.2, 1:0.22, 1:0.25, 1:0.27, 1:0.3, 1:0.32, 1:0.35, 1:0.38, 1:0.4, 1:0.42, 1:0.45, or 1:0.5, etc.
Preferably, the reaction time between the core quantum dot solution and the silane coupling agent in the step (1) is 0.3-15 min, for example, 1min, 2min, 3min, 4min, 5min, 6min, 7min, 8min, 9min, 10min, 11min, 12min, 13min or 14min, and specific point values among the above point values, which are limited in space and for brevity, the present invention is not exhaustive.
Preferably, the molar ratio of intermediate to organic salt in step (1) is 1 (1-100), e.g. 1:5, 1:10, 1:15, 1:20, 1:25, 1:30, 1:35, 1:40, 1:45, 1:50, 1:55, 1:60, 1:65, 1:70, 1:75, 1:80, 1:85, 1:90, 1:95, etc.
Preferably, the reaction of the intermediate product of step (1) with the organic salt is carried out at a pH of 5 to 11 (e.g., 5.5, 6, 6.5, 7, 7.5, 8, 8.5, 9, 9.5, 10 or 10.5, etc.).
Preferably, the intermediate product of step (1) is reacted with the organic salt at a temperature of 120 to 320 ℃, such as 130 ℃, 140 ℃, 150 ℃, 160 ℃, 170 ℃, 180 ℃, 190 ℃, 200 ℃, 210 ℃, 220 ℃, 230 ℃, 240 ℃, 250 ℃, 260 ℃, 270 ℃, 280 ℃, 290 ℃, 300 ℃ or 310 ℃ and specific point values between the above point values, limited in space and for brevity the invention is not exhaustive list of the specific point values comprised in the range.
Preferably, the reaction time between the intermediate product and the organic salt in the step (1) is 0.5-90 min, for example 1min, 5min, 10min, 15min, 20min, 25min, 30min, 35min, 40min, 45min, 50min, 55min, 60min, 65min, 70min, 75min, 80min or 85min, and the specific point values between the above point values, which are limited in space and for brevity, the present invention is not exhaustive.
Preferably, the substrate in the step (2) comprises an insulating transparent bottom plate, a transparent conductive film and a circuit which are sequentially arranged from bottom to top.
Preferably, the transparent substrate has a thickness of 12 to 65 μm, such as 14 μm, 16 μm, 18 μm, 20 μm, 22 μm, 24 μm, 26 μm, 28 μm, 30 μm, 32 μm, 34 μm, 36 μm, 38 μm, 40 μm, 42 μm, 44 μm, 46 μm, 48 μm, 50 μm, 52 μm, 54 μm, 56 μm, 58 μm, 60 μm, 62 μm or 64 μm, etc., and specific point values between the above point values are limited in space and for brevity the invention is not exhaustive of the specific point values included in the range.
Preferably, the material of the insulating transparent base plate comprises any one or a combination of at least two of inorganic glass, polymethyl methacrylate, polystyrene, polycarbonate or polydiallyldiglycol carbonate.
Preferably, the transparent conductive film includes an ITO film.
Preferably, the transparent conductive film has a light transmittance of > 85%, such as 87%, 89%, 91%, 93%, 95%, 97%, 99% or 100%, and specific point values between the above point values, and the present invention is not exhaustive of the specific point values included in the range for the sake of brevity and conciseness.
Preferably, the transparent conductive film has a resistivity of < 5×10 -4 Omega.m, e.g. 4.5X10 -4 Ω·m、4×10 -4 Ω·m、3.5×10 -4 Ω·m、3×10 -4 Ω·m、2.5×10 -4 Ω·m、2×10 -4 Ω·m、1.5×10 -4 Omega.m or 1X 10 -4 Omega m, and specific point values between the above-mentioned point values, are limited in space and for the sake of brevity, the invention is not intended to be exhaustive of the specific point values comprised in the range.
Preferably, the thickness of the transparent conductive film is 150 to 1500nm, for example, 200nm, 250nm, 300nm, 350nm, 400nm, 450nm, 500nm, 550nm, 600nm, 650nm, 700nm, 750nm, 800nm, 850nm, 900nm, 950nm, 1000nm, 1100nm, 1200nm, 1300nm or 1400nm, and specific point values between the above point values, are limited in length and for brevity, the present invention is not exhaustive list of specific point values included in the range.
Preferably, the substrate in step (2) is prepared by the following steps:
preparing a transparent conductive film on an insulating transparent bottom plate, coating an etching-resistant material on the transparent conductive film according to pixel point arrangement, etching the transparent conductive film coated with the etching-resistant material until the corresponding position leaks out of the insulating transparent bottom plate, stripping and cleaning the residual etching-resistant material, and mounting a circuit on the transparent conductive film to obtain the substrate.
The preparation method of the quantum dot luminescent layer provided by the invention comprises the following steps of: firstly, preparing a transparent conductive film on an insulating transparent bottom plate, and then coating an etching-resistant material on the transparent conductive film according to pixel point arrangement, so that the etching-resistant material covers areas where red light core quantum dots, green light core quantum dots and blue light core quantum dots are to be deposited; etching the transparent conductive film coated with the etching-resistant material until the corresponding position leaks out of the insulating transparent bottom plate, stripping and cleaning the residual etching-resistant material, and finally installing a circuit on the transparent conductive film to enable all transparent conductive film areas to be deposited with red light core quantum dots to be connected with each other so as to realize electric conduction, all transparent conductive film areas to be deposited with green light core quantum dots to be connected with each other so as to realize electric conduction, and all transparent conductive film areas to be deposited with blue light core quantum dots to be connected with each other so as to realize electric conduction; and finally obtaining the substrate.
Preferably, the method for preparing the transparent conductive film comprises any one of magnetron sputtering, vacuum evaporation or sol-gel spin coating.
Preferably, the etching comprises physical etching and/or chemical etching.
Preferably, the etching material has a coating thickness of 200 to 15000nm, such as 500nm, 1000nm, 1500nm, 2500nm, 3500nm, 5500nm, 6500nm, 7500nm, 8500nm, 9500nm, 10500nm, 11500nm, 12500nm, 13500nm or 14500nm, and specific point values between the above point values, are limited in length and for brevity, the present invention is not exhaustive of the specific point values included in the range.
Preferably, the cleaning comprises any one or a combination of at least two of organic solution cleaning, water cleaning or plasma cleaning.
Preferably, the direct current voltage of the electrodeposition in step (2) is 1 to 12V, such as 2V, 3V, 4V, 5V, 6V, 7V, 8V, 9V, 10V or 11V, and specific point values between the above point values, are limited in space and for the sake of brevity, the present invention is not exhaustive of the specific point values included in the range.
Preferably, the current of the deposit is 0.5-30 mA, such as 1mA, 2mA, 4mA, 6mA, 8mA, 10mA, 12mA, 14mA, 16mA, 18mA, 20mA, 22mA, 24mA, 26mA or 28mA, and specific point values between the above point values, are limited in scope and for brevity, the invention is not intended to be exhaustive.
Preferably, the electrodeposition time is 1 to 30min, such as 2min, 4min, 6min, 8min, 10min, 12min, 14min, 16min, 18min, 20min, 22min, 24min or 26min, 28min, and specific point values among the above point values, which are limited in space and for brevity, the present invention is not exhaustive.
Preferably, the electrodeposited deposit layer has a thickness of 15 to 90 μm, such as 20 μm, 25 μm, 30 μm, 35 μm, 40 μm, 45 μm, 50 μm, 55 μm, 60 μm, 65 μm, 70 μm, 75 μm, 80 μm or 85 μm, and specific point values between the above point values, are limited in length and for brevity, the invention is not exhaustive of the list of specific point values included in the range.
Preferably, the step (2) further comprises a step of surface spraying after the electrodeposition.
As the preferable technical scheme of the invention, the method also comprises the step of surface spraying after the electrodeposition is finished, and the quantum dot luminescent layer with high luminous efficiency and high display resolution can be obtained after the surface spraying treatment; specifically, after a core quantum dot of a certain charged color light is electrodeposited on a substrate, the substrate on which the core quantum dot of a certain charged color light is deposited is taken out from a deposition solution, and spray coating treatment is performed, so that the core quantum dot deposited on the substrate has the effects of protecting and preventing adhesion instability, and the core quantum dot of a first charged color light deposited on the substrate is prevented from falling off when the core quantum dot of a second charged color light is electrodeposited.
Preferably, the sprayed material is an acrylic material.
Preferably, the temperature of the reaction in step (3) is 60 to 120 ℃, such as 65 ℃, 70 ℃, 75 ℃, 80 ℃, 85 ℃, 90 ℃, 95 ℃, 100 ℃, 105 ℃, 110 ℃ or 115 ℃, and specific point values between the above point values, for reasons of space and for reasons of simplicity, the invention is not exhaustive of the specific point values comprised in the range.
Preferably, the reaction in step (3) is carried out for a period of time ranging from 6 to 48 hours, for example from 8 hours, 10 hours, 12 hours, 14 hours, 16 hours, 18 hours, 20 hours, 22 hours, 24 hours, 26 hours, 28 hours, 30 hours, 32 hours, 34 hours, 36 hours, 38 hours, 40 hours, 42 hours, 44 hours or 46 hours, and specific point values between the above point values, are limited in length and for the sake of brevity, the invention is not intended to be exhaustive.
Preferably, the reaction of step (3) further comprises a step of curing the encapsulation after completion.
As the preferable technical scheme of the invention, the step (3) further comprises a step of curing and packaging after the reaction is finished, so that the quantum dot material deposition layer can be included, and the quantum dot luminescent layer with high luminous efficiency and high display resolution can be obtained.
Preferably, the cured package comprises a heat cured package and/or a light cured package.
Preferably, the glue material of the cured package comprises any one or a combination of at least two of epoxy materials, organic silicon materials or polyurethane materials.
Preferably, the preparation method specifically comprises the following preparation steps:
(1) Reacting the core quantum dot solution with a silane coupling agent to obtain an intermediate product, mixing the intermediate product with an organic salt, and reacting for 0.5-90 min at 120-320 ℃ to obtain a charged red light core quantum dot deposition solution, a charged green light quantum dot deposition solution and a charged blue light core quantum dot deposition solution respectively; the organic salt comprises any one or a combination of at least two of sodium acetate, tetrabutylammonium bromide, picolinate, sodium methyl or sodium ethoxide; the core quantum dot comprises any one or a combination of at least two of metal oxide, metal halide, metal nitride, metal sulfide, metal phosphide, metal selenide, metal telluride, metal arsenide or organic metal compound;
(2) Respectively placing the substrate in the red light core quantum dot deposition solution, the green light core quantum dot deposition solution and the blue light core quantum dot deposition solution which are charged in the step (1), and electrodepositing for 1-30 min under the conditions that the direct current voltage is 1-12V and the current is 0.5-30 mA to obtain a core quantum dot deposition substrate; the substrate comprises an insulating transparent bottom plate, a transparent conductive film and a circuit which are sequentially arranged from bottom to top;
(3) And (3) reacting the core quantum dot deposition substrate obtained in the step (2) at 60-120 ℃ for 6-48 h, and curing and packaging to obtain the quantum dot luminescent layer.
In a second aspect, the present invention provides a quantum dot light emitting layer produced by the production method as described in the first aspect.
Preferably, the quantum dot light emitting layer includes a red light quantum dot material, a green light quantum dot material, and a blue light quantum dot material.
Preferably, the red light quantum dot material, the green light quantum dot material and the blue light quantum dot material comprise A x M y E z System materials.
Wherein A is selected from any one of Ba, ag, na, fe, in, cd, zn, ga, mg, pb or Cs.
M is selected from any one of S, cl, O, as, N, P, se, te, ti, zr or Pb.
E is selected from any one of S, as, se, O, cl, br and I.
x is 0.3 to 2, e.g., 0.4, 0.5, 0.6, 0.7, 0.8, 0.9, 1, 1.2, 1.4, 1.6 or 1.8, and specific point values between the above point values, are limited in space and for brevity, the invention is not intended to be exhaustive of the specific point values encompassed by the described ranges.
y is 0.5 to 3, e.g., 0.7, 0.9, 1.1, 1.3, 1.5, 1.7, 1.9, 2.1, 2.3, 2.5, 2.7, or 2.9, and specific point values between the above point values, are limited in space and for brevity, the invention is not intended to be exhaustive of the specific point values encompassed by the described ranges.
z is 0 to 4, for example 0.2, 0.4, 0.6, 0.8, 1, 1.2, 1.4, 1.6, 1.8, 2, 2.2, 2.4, 2.6, 2.8, 3, 3.2, 3.4, 3.6 or 3.8, and specific point values between the above point values, are limited in space and for brevity, the invention is not intended to be exhaustive of the specific point values comprised in the range.
In a third aspect, the present invention provides a use of a quantum dot light emitting layer as described in the second aspect in a display device or lighting device.
Compared with the prior art, the invention has the following beneficial effects:
in the preparation method of the quantum dot luminescent layer, the core quantum dot and the silane coupling agent are reacted to obtain an intermediate product, and the intermediate product is reacted with the organic salt to obtain the charged core quantum dot; under specific electrodeposition conditions, electrodepositing the charged core quantum dots on a substrate, and reacting to obtain the quantum dot luminescent layer, wherein the whole preparation process has simple process, simple operation and low cost, and can realize batch production; the obtained quantum dot luminescent layer has the light conversion rate of 82-88%, the pixel density of 580-660 PPI, the display color gamut value of 112-120%, which is 15-257% higher than the light conversion rate of the quantum dot luminescent layer or the quantum dot optical film in the prior art, the pixel density of 61-106% higher, and the display color gamut value of 5-18%, which shows that the quantum dot luminescent layer provided by the invention has higher light conversion rate and resolution, can realize pixel-level quantum dot arrangement, has the advantages of high luminous efficiency, high display resolution, and the like, and can improve the light passing rate and display efficacy, reduce the whole power consumption of the device, and is suitable for large-scale industrialized application.
Drawings
FIG. 1 is a schematic diagram of the reaction process of step (1) in the preparation method provided by the invention;
FIG. 2 is a schematic diagram of a process for electrodepositing core quantum dots on a substrate;
FIG. 3 is a schematic diagram of the process of reacting charged core quantum dots on a substrate into charged quantum dot material.
The light-emitting material comprises 1-core quantum dots, 2-intermediate products, 3-charged core quantum dots, 4-substrates, 5-generation-reaction electrodes and 6-charged quantum dot light-emitting materials.
Detailed Description
The technical scheme of the invention is further described by the following specific embodiments. It will be apparent to those skilled in the art that the examples are merely to aid in understanding the invention and are not to be construed as a specific limitation thereof.
Example 1
The preparation method of the quantum dot luminescent layer specifically comprises the following steps:
(1) Preparation of a charged core quantum dot deposition solution: reacting the octadecene solution of the InP core with vinyl triethoxysilane for 6min to obtain an intermediate product; adding sodium acetate to mix at 220 ℃, wherein the molar concentration of InP core in the octadecene solution is 2.5mol/L, the concentration of vinyltriethoxysilane in the octadecene solution is 0.5mol/L, and the molar concentration of sodium acetate in the octadecene solution is 120mol/L; reacting for 45min to obtain an InP core deposition solution (red light core quantum dot deposition solution) with charges; under the same conditions, the InP core is replaced by CsPbBr 3 Core, repeat the above steps to obtain charged CsPbBr 3 Core deposition solution (green core quantum dot deposition solution); changing the InP core into a CdSe core, and repeating the steps to obtain a charged InP core deposition solution (blue light core quantum dot deposition solution);
(2) Preparing a substrate: firstly, preparing Sn doped In on inorganic glass with the thickness of 250 mu m by a magnetron sputtering method 2 O 3 A transparent conductive film; coating negative photoresist with the thickness of 750nm on the cured transparent conductive film according to pixel point arrangement, so that etching-resistant materials alternately cover InP core quantum dots to be deposited and CsPbBr 3 Areas of core quantum dots and CdSe core quantum dots; then, chemically etching the transparent conductive film coated with the etching-resistant material until the inorganic glass leaks from the corresponding position, and stripping and water cleaning the residual etching-resistant material; finally, a circuit is arranged on the transparent conductive film to connect the transparent conductive film areas of all to-be-deposited InP core quantum dots with each other, and all to-be-deposited CsPbBr 3 The transparent conductive film areas of the core quantum dots are connected with each other, and all the transparent conductive film areas to be deposited with CdSe core quantum dots are connected with each other to form a core quantum dot deposition substrate, so that the substrate is obtained;
(3) Electrodeposition process: will step by stepPlacing the substrate obtained in the step (2) into the InP core deposition solution obtained in the step (1), adding a reaction electrode into the solution, and performing electrodeposition for 15min under the conditions of 6V direct current and 15mA current to obtain a charged InP core quantum dot deposition substrate, wherein the thickness of the deposition layer is 42 mu m, and completing electrodeposition; taking out the substrate deposited with the charged InP core quantum dots from the solution, spraying the substrate deposited with the InP core quantum dots with methacrylate, and then respectively placing the substrate in the charged CsPbBr obtained in the step (1) 3 Repeating the electrodeposition steps in the core quantum dot deposition solution and the charged CdSe core quantum dot deposition solution to obtain the charged InP core quantum dots and the charged CsPbBr 3 A deposition substrate of core quantum dots and charged CdSe core quantum dots;
(4) Reacting the deposition substrate obtained in the step (3) for 28 hours at the temperature of 90 ℃ to obtain the InP quantum dot material and CsPbBr deposited on the surface 3 And finally packaging the substrate by bisphenol A type epoxy resin to obtain the quantum dot luminescent layer.
Example 2
The preparation method of the quantum dot luminescent layer is different from example 1 only in that InP core quantum dots and CsPbBr in the octadecene solution in the step (1) 3 The molar concentration of the core quantum dots and the CdSe core quantum dots is 0.25mol/L, and the molar concentration of sodium acetate in the octadecene solution is 12mol/L; the amounts of other components and experimental conditions were the same as in example 1, to obtain the quantum dot light-emitting layer.
Example 3
The preparation method of the quantum dot luminescent layer is different from example 1 only in that InP core quantum dots and CsPbBr in the octadecene solution in the step (1) 3 The molar concentration of the core quantum dots and the CdSe core quantum dots is 5mol/L, and the molar concentration of sodium acetate in the octadecene solution is 240mol/L; the amounts of other components and experimental conditions were the same as in example 1, to obtain the quantum dot light-emitting layer.
Example 4
The preparation method of the quantum dot luminescent layer is different from the example 1 only in that the molar concentration of sodium acetate in the octadecene solution in the step (1) is 2.5mol/L; the amounts of other components and experimental conditions were the same as in example 1, to obtain the quantum dot light-emitting layer.
Example 5
The preparation method of the quantum dot luminescent layer is different from the example 1 only in that the molar concentration of sodium acetate in the octadecene solution in the step (1) is 250mol/L; the amounts of other components and experimental conditions were the same as in example 1, to obtain the quantum dot light-emitting layer.
Example 6
The present embodiment provides a method for preparing a quantum dot light-emitting layer, which is different from embodiment 1 only in that InP core quantum dots, csPbBr in step (1) 3 The core quantum dots and the CdSe core quantum dots are replaced by PbSe core quantum dots, cdS core quantum dots and ZnS core quantum dots respectively; the amounts of other components and experimental conditions were the same as in example 1, to obtain the quantum dot light-emitting layer.
Comparative example 1
A preparation method of a quantum dot luminescent layer comprises the following specific preparation methods
(1) Coating InP red light quantum dot glue with concentration of 0.15mol/L and CsPbBr with concentration of 0.50mol/L on inorganic glass respectively 3 Green light quantum dot glue and CdSe blue light quantum dot glue with the concentration of 0.73mol/L are subjected to photo-curing to obtain a photoresist substrate;
(2) Covering a masking cover at the position coated with red light quantum dot glue, green light quantum dot glue and blue light quantum dot glue on the photoresist substrate obtained in the step (1), and irradiating by using ultraviolet light to expose the irradiated part to obtain an exposed substrate;
(3) And (3) developing and cleaning the exposure substrate obtained in the step (2), and stripping the exposure part of the exposure substrate to obtain the quantum dot luminescent layer.
Comparative example 2
The preparation method of the quantum dot luminescent layer comprises the following steps:
(1) MAPbI with concentration of 0.22mol/L is prepared respectively 3 Red light quantum dot ink, concentration0.62mol/L of InP green light quantum dot ink and 0.80mol/L of PbS blue light quantum dot ink;
(2) Respectively coating the red light quantum dot ink, the green light quantum dot ink and the blue light quantum dot ink obtained in the step (1) on inorganic glass to obtain a deposition substrate;
(3) And (3) under the protection of nitrogen atmosphere, treating the deposition substrate obtained in the step (2) at 120 ℃ for 35min to volatilize red light quantum dot ink, green light quantum dot ink and blue light quantum dot ink on the deposition substrate, thereby obtaining the quantum dot luminescent layer.
Comparative example 3
A quantum dot optical membrane, specifically, the preparation method:
(1) Mixing ZnS red light quantum dots with the mass ratio of 1:446.2 with acrylic packaging glue, mixing InP green light quantum dots with the mass ratio of 3.2:446.2 with acrylic packaging glue, and mixing CsPbCl with the mass ratio of 5:446.2 3 Mixing the blue light quantum dot material with acrylic packaging glue to respectively obtain red light quantum dot glue, green light quantum dot glue and blue light quantum dot glue;
(2) Mixing the red light quantum dot glue, the green light quantum dot glue and the blue light quantum dot glue obtained in the step (1) to obtain mixed quantum dot glue, and adding silicon oxide into the mixed quantum dot glue to obtain mixed glue, wherein the mass percentage of the mixed quantum dot glue in the mixed glue is 1.5%;
(3) Coating the mixed glue obtained in the step (2) on a substrate membrane, covering a layer of substrate membrane, controlling the thickness of the quantum dot layer by using a coating machine, packaging under ultraviolet irradiation, and cutting to obtain the quantum dot optical membrane.
Application examples 1 to 6
A display device, which uses the quantum dot luminescent layers obtained in examples 1-6 to a display device, is specifically prepared by the following steps:
the quantum dot luminescent layers prepared in examples 1 to 6 are arranged on an ultraviolet light Micro-LED backlight source, and the quantum dot luminescent layers can emit red light, green light and blue light under the excitation of the ultraviolet light Micro-LED backlight source.
Comparative application examples 1 to 2
A display device using the quantum dot light-emitting layers obtained in comparative examples 1 and 2 as a light-emitting device was prepared in the same manner as in application example 1.
Comparative application example 3:
a display device using the quantum dot optical film obtained in comparative example 3 as a light-emitting device was different from that of comparative application example 1 in that a color filter was added to realize red, green, and blue full-color display.
Performance test:
(1) Light conversion efficiency: the light power of the sample emitted light after being excited by the backlight source/the light power of the backlight source emitted light is multiplied by 100 percent;
(2) Pixel density: connecting the diagonal lines of the samples, wherein the number of pixel points existing on each inch of length is the resolution;
(3) Display gamut values: the triangle formed by connecting the color coordinate points of the red, green and blue colors of the display screen is compared with the standard NTSC triangle area.
The display devices obtained in application examples 1 to 6 and comparative application examples 1 to 3 were subjected to performance test according to the above test method, and the test results are shown in table 1:
TABLE 1
From the data in table 1, it can be seen that: the display device comprising the quantum dot luminescent layer provided by the invention has higher light conversion efficiency and pixel density (PPI), and has wider display color gamut value; specifically, the light conversion rate of the quantum dot light emitting layer provided in examples 1 to 6 is 82 to 88%, the pixel density is 580 to 660PPI, the display color gamut value is 112 to 120%, compared with the light conversion rate of the quantum dot light emitting layer (comparative example 1 and comparative example 2) or the quantum dot optical film (comparative example 3) in the prior art, the light conversion rate is improved by 15 to 257%, the pixel density is improved by 61 to 106%, and the display color gamut value is improved by 5 to 18%, which indicates that the quantum dot light emitting layer provided by the invention has higher light conversion efficiency and resolution.
The applicant states that the present invention is described by the above embodiments as a quantum dot light emitting layer, and a method of preparing the same and a method of using the same, but the present invention is not limited to the above process steps, i.e. it does not mean that the present invention must be implemented by relying on the above process steps. It should be apparent to those skilled in the art that any modification of the present invention, equivalent substitution of selected raw materials, addition of auxiliary components, selection of specific modes, etc. fall within the scope of the present invention and the scope of disclosure.
Claims (36)
1. The preparation method of the quantum dot luminescent layer is characterized by comprising the following steps of:
(1) Reacting the core quantum dot solution with a silane coupling agent to obtain an intermediate product, and reacting the intermediate product with an organic salt to respectively obtain a charged red light core quantum dot deposition solution, a charged green light core quantum dot deposition solution and a charged blue light core quantum dot deposition solution;
(2) Respectively placing the substrate in the charged red light core quantum dot deposition solution, the charged green light core quantum dot deposition solution and the charged blue light core quantum dot deposition solution obtained in the step (1) for electrodeposition to obtain a core quantum dot deposition substrate;
(3) Reacting the core quantum dot deposition substrate obtained in the step (2) to obtain the quantum dot luminescent layer;
the silane coupling agent in the step (1) comprises any one or a combination of at least two of vinyl triethoxysilane, vinyl trimethoxysilane or vinyl tri (beta-methoxyethoxy) silane;
the organic salt in the step (1) comprises any one or a combination of at least two of sodium acetate, tetrabutylammonium bromide, picolinate, sodium methyl or sodium ethoxide;
the substrate in the step (2) comprises an insulating transparent bottom plate, a transparent conductive film and a circuit which are sequentially arranged from bottom to top;
the direct current voltage of the electrodeposition in the step (2) is 1-12V, the current is 0.5-30 mA, and the time is 1-30 min;
and (3) the electrodeposited film in the step (2) further comprises a surface spraying step.
2. The method of claim 1, wherein the core quantum dot of step (1) comprises any one or a combination of at least two of a metal oxide, a metal halide, a metal nitride, a metal sulfide, a metal phosphide, a metal selenide, a metal telluride, a metal arsenide, or an organometallic compound.
3. The method of claim 2, wherein the metal in the metal oxide, metal halide, metal nitride, metal sulfide, metal phosphide, metal selenide, metal telluride, metal arsenide, or organometallic compound each independently comprises any one or a combination of at least two of Ba, ca, ag, na, fe, in, cd, zn, ga, mg, ti, zr, pb or Cs.
4. The method of claim 1, wherein the core quantum dots comprise CdS, cdTe, cdSe, znSe, znS, znTe, pbSe, pbS, cuInS 2 、AgInS 2 、CuZnInS 2 、InP、CsPbBr 3 、CsPbCl 3 、CsPbI 3 、CH 3 NH 3 PbBr 3 、MAPbCl 3 Or MAPbI 3 Any one or a combination of at least two of these.
5. The method of claim 1, wherein the core quantum dots are prepared by a solution process.
6. The method of claim 1, wherein the solvent of the core quantum dot solution of step (1) comprises any one or a combination of at least two of octadecene, trioctylamine, oleylamine, liquid paraffin, dodecane, octane, or hexane.
7. The preparation method according to claim 1, wherein the molar mass of the core quantum dots is 0.25 to 5mol based on 1L of the core quantum dot solution.
8. The preparation method of claim 1, wherein the molar ratio of the core quantum dots to the silane coupling agent in the step (1) is 1 (0.02-0.5).
9. The preparation method of claim 1, wherein the time for the core quantum dot solution and the silane coupling agent in the step (1) to react is 0.3-15 min.
10. The preparation method according to claim 1, wherein the molar ratio of the intermediate product and the organic salt in the step (1) is 1 (1-100).
11. The method according to claim 1, wherein the reaction of the intermediate product of step (1) with an organic salt is carried out at a pH of 5 to 11.
12. The method of claim 1, wherein the intermediate product of step (1) is reacted with an organic salt at a temperature of 120-320 ℃.
13. The method according to claim 1, wherein the intermediate product of step (1) is reacted with the organic salt for 0.5 to 90 minutes.
14. The method for manufacturing a transparent insulating base plate according to claim 1, wherein the thickness of the transparent insulating base plate is 12-65 μm.
15. The method of claim 1, wherein the material of the insulating transparent base plate comprises any one or a combination of at least two of inorganic glass, polymethyl methacrylate, polystyrene, polycarbonate, or polydiallyldiglycol carbonate.
16. The method of manufacturing according to claim 1, wherein the transparent conductive film comprises an ITO film.
17. The method of claim 1, wherein the transparent conductive film has a light transmittance of > 85%.
18. The method according to claim 1, wherein the transparent conductive film has a resistivity of < 5 x 10 -4 Ω·m。
19. The method according to claim 1, wherein the transparent conductive film has a thickness of 150 to 1500 nm.
20. The method of claim 1, wherein the substrate of step (2) is prepared by:
preparing a transparent conductive film on an insulating transparent bottom plate, coating an etching-resistant material on the transparent conductive film according to pixel point arrangement, etching the transparent conductive film coated with the etching-resistant material until the corresponding position leaks out of the insulating transparent bottom plate, stripping and cleaning the residual etching-resistant material, and mounting a circuit on the transparent conductive film to obtain the substrate.
21. The method of claim 20, wherein the method of preparing a transparent conductive film comprises any one of magnetron sputtering, vacuum evaporation, or sol-gel spin coating.
22. The method of manufacturing according to claim 20, wherein the etching comprises physical etching and/or chemical etching.
23. The method of claim 20, wherein the etching material has a coating thickness of 200-15000 nm.
24. The method of claim 20, wherein the washing comprises any one or a combination of at least two of organic solution washing, water washing, or plasma washing.
25. The method according to claim 1, wherein the electrodeposited deposition layer has a thickness of 15 to 90 μm.
26. The method of claim 1, wherein the sprayed material is an acrylate material.
27. The method according to claim 1, wherein the reaction temperature in the step (3) is 60 to 120 ℃.
28. The method according to claim 1, wherein the reaction time in the step (3) is 6 to 48 hours.
29. The method of claim 1, wherein the reaction of step (3) is completed further comprising the step of curing the encapsulation.
30. The method of manufacturing according to claim 29, wherein the cured encapsulation comprises a heat cured encapsulation and/or a photo cured encapsulation.
31. The method of claim 29, wherein the cured encapsulated glue material comprises any one or a combination of at least two of an epoxy-based material, an organosilicon-based material, or a polyurethane-based material.
32. The preparation method according to claim 1, characterized in that it comprises the following preparation steps:
(1) Mixing a core quantum dot solution with a silane coupling agent to obtain an intermediate product, mixing the intermediate product with an organic salt, and reacting for 0.5-90 min at 120-320 ℃ to respectively obtain a charged red light core quantum dot deposition solution, a charged green light core quantum dot deposition solution and a charged blue light core quantum dot deposition solution; the organic salt comprises any one or a combination of at least two of sodium acetate, tetrabutylammonium bromide, picolinate, sodium methyl or sodium ethoxide; the core quantum dot comprises any one or a combination of at least two of metal oxide, metal halide, metal nitride, metal sulfide, metal phosphide, metal selenide, metal telluride, metal arsenide or organic metal compound;
(2) Respectively placing the substrate in the red light core quantum dot deposition solution, the green light core quantum dot deposition solution and the blue light core quantum dot deposition solution which are charged in the step (1), and performing electrodeposition for 1-30 min under the conditions that the direct current voltage is 1-12V and the current is 0.5-30 mA to obtain a core quantum dot deposition substrate; the substrate comprises an insulating transparent bottom plate, a transparent conductive film and a circuit which are sequentially arranged from bottom to top;
(3) And (3) reacting the core quantum dot deposition substrate obtained in the step (2) for 6-48 hours at the temperature of 60-120 ℃, and curing and packaging to obtain the quantum dot luminescent layer.
33. A quantum dot light-emitting layer, characterized in that it is produced by the production method according to any one of claims 1 to 32.
34. The quantum dot light emitting layer of claim 33, wherein the quantum dot light emitting layer comprises a red light quantum dot material, a green light quantum dot material, and a blue light quantum dot material.
35. The quantum dot light emitting layer of claim 34, wherein the red, green and blue quantum dot materials comprise a x M y E z A system material;
wherein A is selected from any one of Ba, ag, na, fe, in, cd, zn, ga, mg, pb or Cs;
m is selected from any one of S, cl, O, as, N, P, se, te, ti, zr or Pb;
e is selected from any one of S, as, se, O, cl, br or I;
x is 0.3-2;
y is 0.5-3;
z is 0 to 4.
36. Use of the quantum dot light emitting layer of claim 34 in a display device or a lighting device.
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| CN104253247A (en) * | 2014-10-13 | 2014-12-31 | 深圳市华星光电技术有限公司 | Preparation method of OLED (Organic Light Emitting Diode) device and OLED device prepared by adopting preparation method |
| EP3072944A3 (en) * | 2015-03-27 | 2016-10-12 | Nexdot | Core-shell nanoplatelets film and display device using the same |
| CN105388660B (en) * | 2015-12-17 | 2018-05-01 | 深圳市华星光电技术有限公司 | The preparation method of COA type array base paltes |
| CN106479503A (en) * | 2016-09-29 | 2017-03-08 | Tcl集团股份有限公司 | A kind of quantum dot solid film and preparation method thereof |
| CN111607234B (en) * | 2020-06-15 | 2022-12-06 | Tcl华星光电技术有限公司 | Quantum dot composition and preparation method thereof, quantum dot patterning method and patterned quantum dot solid film |
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