WO2022127129A1 - Doped cobaltosic oxide and preparation method therefor - Google Patents

Doped cobaltosic oxide and preparation method therefor Download PDF

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WO2022127129A1
WO2022127129A1 PCT/CN2021/109819 CN2021109819W WO2022127129A1 WO 2022127129 A1 WO2022127129 A1 WO 2022127129A1 CN 2021109819 W CN2021109819 W CN 2021109819W WO 2022127129 A1 WO2022127129 A1 WO 2022127129A1
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doped
cobalt tetroxide
reaction
preparation
doped cobalt
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French (fr)
Chinese (zh)
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胡进
陈九华
杨志
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巴斯夫杉杉电池材料有限公司
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    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10Inorganic compounds or compositions
    • C30B29/16Oxides
    • C30B29/22Complex oxides
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01GCOMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G51/00Compounds of cobalt
    • C01G51/04Oxides; Hydroxides
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B1/00Single-crystal growth directly from the solid state
    • C30B1/10Single-crystal growth directly from the solid state by solid state reactions or multi-phase diffusion
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C30B7/10Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by application of pressure, e.g. hydrothermal processes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01MPROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M10/00Secondary cells; Manufacture thereof
    • H01M10/05Accumulators with non-aqueous electrolyte
    • H01M10/052Li-accumulators
    • H01M10/0525Rocking-chair batteries, i.e. batteries with lithium insertion or intercalation in both electrodes; Lithium-ion batteries
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01MPROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M4/00Electrodes
    • H01M4/02Electrodes composed of, or comprising, active material
    • H01M4/36Selection of substances as active materials, active masses, active liquids
    • H01M4/48Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides
    • H01M4/52Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of nickel, cobalt or iron
    • H01M4/523Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of nickel, cobalt or iron for non-aqueous cells
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01MPROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M4/00Electrodes
    • H01M4/02Electrodes composed of, or comprising, active material
    • H01M4/62Selection of inactive substances as ingredients for active masses, e.g. binders, fillers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01MPROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M4/00Electrodes
    • H01M4/02Electrodes composed of, or comprising, active material
    • H01M2004/021Physical characteristics, e.g. porosity, surface area
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01MPROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M4/00Electrodes
    • H01M4/02Electrodes composed of, or comprising, active material
    • H01M2004/026Electrodes composed of, or comprising, active material characterised by the polarity
    • H01M2004/028Positive electrodes
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/10Energy storage using batteries

Definitions

  • the invention belongs to the field of lithium ion battery materials, in particular to a doped cobalt tetroxide and a preparation method thereof.
  • Lithium cobalt oxide cathode materials have an important application direction in the digital field. As electronic products have increasingly strict performance requirements for lithium batteries, the update iteration of lithium cobalt oxide cathode materials is particularly important.
  • the performance of the lithium cobalt oxide cathode material depends largely on the performance of the precursor. At present, in order to prepare high energy density cathode materials, on the one hand, the voltage platform of the cathode material is improved through doping technology, and on the other hand, the cathode material is improved through the matching technology of large and small particles.
  • the compacted density of the material is mainly prepared by calcining cobalt tetroxide and lithium carbonate at a certain temperature.
  • the technical modification of lithium cobalt oxide cathode material is gradually studied by sintering modification. Turning to the research on the synthesis process and performance of the precursor of cobalt tetroxide, it is of great significance to deepen the research of cobalt tetroxide to improve the performance of lithium cobalt oxide.
  • the preparation methods of cobalt tetroxide include spray pyrolysis, liquid-phase precipitation-thermal decomposition method, etc.
  • the cobalt tetroxide prepared by liquid-phase precipitation-thermal decomposition method mainly adopts batch process to synthesize cobalt carbonate first, and then prepare porous cobalt tetroxide through thermal decomposition.
  • the preparation method of dense crystal small particle spherical cobalt carbonate mentioned in Chinese patent CN2020100308075, and the preparation method of cobalt tetroxide mentioned in Chinese patent CN106882843A the particle size of the prepared cobalt carbonate is relatively large, and the secondary particle morphology is not easy to sinter into a single crystal.
  • the preparation technology of single crystal cobalt tetroxide is generally prepared by spray pyrolysis.
  • the spray pyrolysis method mainly obtains single crystal cobalt tetroxide from cobalt chloride solution through pyrolysis, but this method will lead to the generation of a large amount of hydrogen chloride gas, and the treatment of exhaust gas is strict, and The spray pyrolysis method cannot be applied to the preparation of doped single crystal cobalt tetroxide.
  • lithium cobalt oxide cathode materials are mostly made of polycrystalline small particles of conventional secondary spherical particles of tricobalt tetroxide as raw materials, but there are relatively high pores inside the raw materials of polycrystalline small particles, and due to the small particle size, cobalt and doping elements are in the sintering process. It is easy to form a state of phase separation, which makes the distribution of doping elements uneven, and the positive electrode materials prepared by using polycrystalline agglomerates have low compaction density and serious battery gas production.
  • the technical problem to be solved by the present invention is to overcome the deficiencies and defects mentioned in the above background technology, and provide a doped type cobalt tetroxide and a preparation method thereof.
  • the technical scheme proposed by the present invention is:
  • a doped cobalt tetroxide the morphology of the doped cobalt tetroxide is a single crystal particle or a quasi-single crystal agglomerate, the primary grain size of the doped cobalt tetroxide is 200-500nm, and the half-peak width of the 311 crystal plane is is 0.2-0.6.
  • the above-mentioned doped tricobalt tetroxide preferably, the specific surface area BET of the doped tricobalt tetroxide satisfies the relational expression 0.5 ⁇ (BET-2.5)/(TD-1.5) ⁇ 1, wherein, the tap density TD ⁇ 1.5g/cm 3.
  • the bulk density is greater than or equal to 1.1g/cm 3 .
  • the present invention also provides a preparation method of the above-mentioned doped cobalt tetroxide, comprising the following steps:
  • the soluble mixed salt solution refers to a mixed solution of a soluble cobalt salt and a soluble doped element salt
  • step (4) washing, drying, sieving and calcining the material obtained after the reaction in step (4) to obtain doped cobalt tetroxide.
  • the growth rate of the particles is accelerated by controlling a low and constant pH value.
  • controlling the high rotation speed can effectively promote the dispersion of the particles, prevent agglomeration, and make the co-precipitation of doping elements. The effect is more even.
  • the present invention controls the pH value to be very low and constant, and simultaneously adopts high rotational speed, low temperature and low pH Value combination, that is, using high speed to solve the problem of easy agglomeration of particles during growth, using lower temperature control to provide a suitable nucleation speed, and under the premise that agglomeration does not occur during the co-precipitation reaction, the morphology can be obtained.
  • step (4) the solid content of the slurry is controlled to be 40-50%, and the target particle size of the slurry in the reaction kettle is 2-4 ⁇ m.
  • the temperature of the reaction process is 40-50° C., and the stirring speed of the reactor stirrer is 800-1000 rpm. Further preferably, the temperature of the reaction process is 40-45° C., and the rotating speed of the reactor stirrer is 800-850 rpm.
  • the concentration of the soluble mixed salt solution is 100-140g/L, and the concentration of ammonium bicarbonate is 200-240g/L;
  • step (3) the flow rate that the soluble mixed salt solution passes into the reactor is 80-100 mL/min. Further preferably, the flow rate of the mixed salt solution is 85 ⁇ 5ml/min.
  • washing means that the material is washed alternately with hot pure water and ammonium bicarbonate solution, the hot water temperature is 70-80 ° C, and the concentration of ammonium bicarbonate solution is 80-120 g/L ; The drying temperature is 100-120°C.
  • calcining refers to sintering at a constant temperature of 350°C for 2-3 hours, and then sintering at 900-950°C for 3-9 hours; the calcination process is carried out in an air atmosphere, and the gas The flow rate is 10-15L/h.
  • the doped tricobalt tetroxide of the present invention has a single crystal or quasi-single crystal agglomerate morphology. Compared with the conventional secondary agglomerate morphology, its compaction density is significantly higher, which is a good way to synthesize high-energy-density cobalt tetroxide. Lithium cobalt oxide cathode material provides assurance.
  • the preparation method of the present invention by adopting the technological characteristics of high rotational speed and slurry recycling, makes the cobalt carbonate crystal nucleus generated in the wet synthesis process smaller, the semi-finished cobalt tetroxide particle size smaller, and the morphology uniformity better, The particles are more compact.
  • the preparation method of the present invention makes cobalt carbonate better fuse with aluminum during the sintering process by sintering at high temperature, and it is easier to form a flaky segregation morphology than cobalt tetroxide doped aluminum in the secondary spherical particles, and the present invention There is no segregation of Al in the single crystal or quasi-single crystal cobalt tetroxide. Combined with the co-precipitation process and sintering technology, the doped Al element is easier to be doped into the cobalt tetroxide lattice.
  • FIG. 1 is a schematic diagram of the doped cobalt carbonate particles obtained in Example 1 of the present invention under a 50,000-fold electron microscope.
  • Example 2 is a particle size distribution diagram of the doped cobalt tetroxide obtained in Example 1 of the present invention.
  • Example 3 is a schematic diagram of the doped cobalt tetroxide particles obtained in Example 1 of the present invention under a 50,000-fold electron microscope.
  • Example 4 is a schematic diagram of the doped cobalt tetroxide particles obtained in Example 1 of the present invention under a 20,000-fold electron microscope.
  • Example 5 is a schematic diagram of the doped cobalt tetroxide particles obtained in Example 1 of the present invention under a 10,000-fold electron microscope.
  • Example 6 is a schematic cross-sectional view of the doped cobalt tetroxide particles prepared in Example 1 of the present invention.
  • FIG. 7 is a distribution diagram of the element uniformity of the cross-section of the doped cobalt tetroxide prepared in Example 1 of the present invention.
  • Example 8 is an analysis diagram of the phase structure of the doped cobalt tetroxide particles prepared in Example 1 of the present invention.
  • Example 9 is a schematic diagram of the doped cobalt carbonate particles obtained in Example 2 of the present invention under a 50,000-fold electron microscope.
  • Example 10 is a particle size distribution diagram of the doped cobalt tetroxide obtained in Example 2 of the present invention.
  • Example 11 is a schematic diagram of the doped cobalt tetroxide particles obtained in Example 2 of the present invention under a 50,000-fold electron microscope.
  • Example 12 is a schematic diagram of the doped cobalt tetroxide particles obtained in Example 2 of the present invention under a 30,000-fold electron microscope.
  • Example 13 is a schematic diagram of the doped cobalt tetroxide particles obtained in Example 2 of the present invention under a 10,000-fold electron microscope.
  • Example 14 is a schematic cross-sectional view of the doped cobalt tetroxide particles prepared in Example 2 of the present invention.
  • Example 15 is a distribution diagram of the element uniformity of the cross-section of the doped cobalt tetroxide prepared in Example 2 of the present invention.
  • Example 16 is an analysis diagram of the phase structure of the doped cobalt tetroxide particles prepared in Example 2 of the present invention.
  • FIG. 17 is a schematic diagram of the cobalt carbonate particles obtained in Comparative Example 1 of the present invention under a 50,000-fold electron microscope.
  • Fig. 18 is a particle size distribution diagram of cobalt tetroxide obtained in Comparative Example 1 of the present invention.
  • FIG. 19 is a schematic diagram of the cobalt tetroxide particles obtained in Comparative Example 1 of the present invention under a 50,000-fold electron microscope.
  • 21 is a schematic diagram of the cobalt tetroxide particles obtained in Comparative Example 1 of the present invention under a 10,000-fold electron microscope.
  • FIG. 22 is a schematic cross-sectional view of the cobalt tetroxide particles prepared in Comparative Example 1 of the present invention.
  • FIG. 23 is a distribution diagram of element uniformity in the cross-section of cobalt tetroxide prepared in Comparative Example 1 of the present invention.
  • step (6) calcining the sieved material obtained in step (5) in an air atmosphere (gas flow rate 12 L/h), first at 350° C. for 3 hours, and then at 950° C. for 4 hours, and the obtained powder is sieved to obtain Doped cobalt tetroxide, sealed and preserved.
  • FIG. 6 The cross-sectional schematic diagram of the doped cobalt tetroxide prepared in this example is shown in FIG. 6
  • FIG. 7 The element uniformity distribution diagram of the cross-sectional schematic diagram is shown in FIG. 7 . It can be seen from the figure that the distribution of aluminum elements doped with the precursor is relatively uniform.
  • the XRD pattern of the doped cobalt tetroxide prepared in this example is shown in FIG. 8 , and it can be seen from the figure that the half width of the 311 crystal plane of the precursor is 0.25.
  • a doped type of cobalt tetroxide of the present invention the molecular formula is Co 2.97 Al 0.02 Mg 0.01 O 4 , the morphology is a quasi-single crystal agglomerate, the primary grain size is 300nm, the half-peak width of the 311 crystal plane is 0.3, and the doped type
  • the slurry is discharged from the overflow port at the bottom of the reactor.
  • the collected material is mixed with the overflow material, it is passed through a centrifuge using pure water and ammonium bicarbonate. Alternate washing, the temperature of pure water is controlled at 70 °C, and the concentration of ammonium bicarbonate is controlled at 110 g/l, until the pH of the washing water is less than 8;
  • step (6) drying the washing material obtained in step (5) through a hot air oven (drying temperature is 110° C.), controlling the moisture content of the dried material to be less than 10%, and sieving the dried material through a 325 mesh screen to obtain a screening material; the photo of the sieved material under the electron microscope at 50,000 times is shown in Figure 9;
  • FIG. 14 is a schematic cross-sectional view of the doped cobalt tetroxide prepared in this example
  • FIG. 15 is an element uniformity distribution diagram of the doped cobalt tetroxide prepared in this example
  • FIG. 16 is an XRD pattern of the doped cobalt tetroxide prepared in this example. , it can be seen that its 311 crystal plane half width is 0.3.
  • the molecular formula of the doped cobalt tetroxide of this comparative example is Co 2.97 Al 0.03 O 4 .
  • the preparation method of the cobalt tetroxide of this comparative example comprises the following steps:
  • step (6) drying the washing material obtained in step (5) through a hot air oven, the drying temperature is 110° C., the moisture content of the dried material is less than 10%, and the dried material is sieved through a 325-mesh screen to obtain a sieved material ;
  • the photo of the screening material under the electron microscope at 50,000 times is shown in Figure 17;
  • the XRD schematic diagram of the doped cobalt tetroxide prepared in this comparative example is shown in Figure 24, and it can be seen from the figure that the half-peak width of the 311 crystal plane is 0.25.

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Abstract

A doped cobaltosic oxide. The morphology of the doped cobaltosic oxide is a single-crystal particle or a single-crystal-like aggregate, the primary grain size is 200-500 nm, and the half-peak width of a 311 crystal face is 0.2-0.6. The preparation method comprises: adjusting the pH value of a reaction kettle base solution to be 7.1±0.05; adding a mixed salt solution containing cobalt and doped elements and an ammonium bicarbonate solution into a reaction kettle for reaction, and controlling the pH value of a reaction system to be 7.1±0.05; standing and clarifying a slurry overflowing from the full liquid level of the reaction kettle, removing a supernatant, controlling the solid content of the slurry, returning the slurry to the reaction kettle for reaction, and stopping feeding until the reaction reaches the target particle size; and washing, drying, sieving and calcining the obtained material to obtain the doped cobaltosic oxide. The obtained doped cobaltosic oxide has a monocrystal or monocrystal-like aggregate morphology, and the compaction density is high.

Description

一种掺杂型四氧化三钴及其制备方法A kind of doped cobalt tetroxide and preparation method thereof 技术领域technical field
本发明属于锂离子电池材料领域,尤其涉及一种掺杂型四氧化三钴及其制备方法。The invention belongs to the field of lithium ion battery materials, in particular to a doped cobalt tetroxide and a preparation method thereof.
背景技术Background technique
随着数码领域产品的迭代升级以及各种高端航模、无人机等新兴电子产品的快速发展,对锂电池的轻量化以及电池容量要求越来越高。钴酸锂正极材料在数码领域具有重要的应用方向,随着电子产品对锂电池的性能要求越来越严格,钴酸锂正极材料的更新迭代显得尤为重要。钴酸锂正极材料的性能很大程度上取决于前驱体的性能,目前为制备高能量密度正极材料,一方面通过掺杂技术提升正极材料的电压平台,另一方面通过大小颗粒搭配技术提升正极材料的压实密度。钴酸锂正极材料主要是由四氧化三钴和碳酸锂在一定的温度下煅烧制备得到,随着掺杂技术和颗粒搭配技术的研究深入,钴酸锂正极材料的技术改性,逐渐由烧结改性研究转向为四氧化三钴前驱体合成工艺和性能研究,因此深化四氧化三钴研究对钴酸锂性能的改进具有重要的意义。With the iterative upgrade of products in the digital field and the rapid development of various high-end model aircraft, drones and other emerging electronic products, the requirements for the lightweight and battery capacity of lithium batteries are getting higher and higher. Lithium cobalt oxide cathode materials have an important application direction in the digital field. As electronic products have increasingly strict performance requirements for lithium batteries, the update iteration of lithium cobalt oxide cathode materials is particularly important. The performance of the lithium cobalt oxide cathode material depends largely on the performance of the precursor. At present, in order to prepare high energy density cathode materials, on the one hand, the voltage platform of the cathode material is improved through doping technology, and on the other hand, the cathode material is improved through the matching technology of large and small particles. The compacted density of the material. The lithium cobalt oxide cathode material is mainly prepared by calcining cobalt tetroxide and lithium carbonate at a certain temperature. With the in-depth research of doping technology and particle matching technology, the technical modification of lithium cobalt oxide cathode material is gradually studied by sintering modification. Turning to the research on the synthesis process and performance of the precursor of cobalt tetroxide, it is of great significance to deepen the research of cobalt tetroxide to improve the performance of lithium cobalt oxide.
四氧化三钴的制备方法有喷雾热解法、液相沉淀-热分解法等,液相沉淀-热分解法制备的四氧化三钴主要是采用间歇工艺先合成碳酸钴,然后再经过热分解制备多孔隙的四氧化三钴,如中国专利CN2020100308075提到的致密晶型小粒径球形碳酸钴的制备方法,以及中国专利CN106882843A提到的四氧化三钴制备方法,其制备的碳酸钴粒度相对还是较大,二次颗粒形貌不容易烧结成单晶。目前单晶四氧化三钴制备技术一般由喷雾热解法制备,喷雾热解法主要由氯化钴溶液通过热解得到单晶四氧化三钴,但此方法会导致大量的氯化氢气体产生,对尾气处理较严格,且通过喷雾热解法无法适用于掺杂型单晶四氧化三钴的制备。The preparation methods of cobalt tetroxide include spray pyrolysis, liquid-phase precipitation-thermal decomposition method, etc. The cobalt tetroxide prepared by liquid-phase precipitation-thermal decomposition method mainly adopts batch process to synthesize cobalt carbonate first, and then prepare porous cobalt tetroxide through thermal decomposition. For example, the preparation method of dense crystal small particle spherical cobalt carbonate mentioned in Chinese patent CN2020100308075, and the preparation method of cobalt tetroxide mentioned in Chinese patent CN106882843A, the particle size of the prepared cobalt carbonate is relatively large, and the secondary particle morphology is not easy to sinter into a single crystal. At present, the preparation technology of single crystal cobalt tetroxide is generally prepared by spray pyrolysis. The spray pyrolysis method mainly obtains single crystal cobalt tetroxide from cobalt chloride solution through pyrolysis, but this method will lead to the generation of a large amount of hydrogen chloride gas, and the treatment of exhaust gas is strict, and The spray pyrolysis method cannot be applied to the preparation of doped single crystal cobalt tetroxide.
目前钴酸锂正极材料多是以常规二次球颗粒的多晶小颗粒四氧化三钴为原料,但多晶小颗粒原料内部存在较高孔隙,且由于粒度较小,钴与掺杂元素在烧结过程中容易形成相分离的状态,使得掺杂元素分布不均匀,且利用多晶团聚体制备出的正极材料存在压实密度较低,电池产气较严重等现象。At present, lithium cobalt oxide cathode materials are mostly made of polycrystalline small particles of conventional secondary spherical particles of tricobalt tetroxide as raw materials, but there are relatively high pores inside the raw materials of polycrystalline small particles, and due to the small particle size, cobalt and doping elements are in the sintering process. It is easy to form a state of phase separation, which makes the distribution of doping elements uneven, and the positive electrode materials prepared by using polycrystalline agglomerates have low compaction density and serious battery gas production.
发明内容SUMMARY OF THE INVENTION
本发明所要解决的技术问题是,克服以上背景技术中提到的不足和缺陷,提供一种掺杂型四氧化三钴及其制备方法。The technical problem to be solved by the present invention is to overcome the deficiencies and defects mentioned in the above background technology, and provide a doped type cobalt tetroxide and a preparation method thereof.
为解决上述技术问题,本发明提出的技术方案为:In order to solve the above-mentioned technical problems, the technical scheme proposed by the present invention is:
一种掺杂型四氧化三钴,所述掺杂型四氧化三钴的形貌为单晶颗粒或者为类单晶团聚体,所述掺杂型四氧化三钴的一次晶粒尺寸为200-500nm,311晶面半峰宽为0.2-0.6。A doped cobalt tetroxide, the morphology of the doped cobalt tetroxide is a single crystal particle or a quasi-single crystal agglomerate, the primary grain size of the doped cobalt tetroxide is 200-500nm, and the half-peak width of the 311 crystal plane is is 0.2-0.6.
上述的掺杂型四氧化三钴,优选的,所述掺杂型四氧化三钴的粒度为D 10≥1μm,D 50=2-6μm,D 90≤10μm,粒度分布(D 90-D 10)/D 50≤1.1。 For the above-mentioned doped cobalt tetroxide, preferably, the particle size of the doped cobalt tetroxide is D 10 ≥1 μm, D 50 =2-6 μm, D 90 ≤10 μm, and particle size distribution (D 90 -D 10 )/D 50 ≤1.1 .
上述的掺杂型四氧化三钴,优选的,所述掺杂型四氧化三钴的比表面积BET满足关系式0.5≤(BET-2.5)/(TD-1.5)≤1,其中,振实密度TD≥1.5g/cm 3,松装密度≥1.1g/cm 3The above-mentioned doped tricobalt tetroxide, preferably, the specific surface area BET of the doped tricobalt tetroxide satisfies the relational expression 0.5≤(BET-2.5)/(TD-1.5)≤1, wherein, the tap density TD≥1.5g/cm 3. The bulk density is greater than or equal to 1.1g/cm 3 .
上述的掺杂型四氧化三钴,优选的,所述掺杂型四氧化三钴的分子式为Co xAl yM zO 4,其中,M选自Mg、Ti、Zr、Nb、La、Y、Ni或Mn中的至少一种,2≤x≤3,0<y≤0.5,0≤z≤0.5,8x+9y+6z=24。 The above-mentioned doped cobalt tetroxide, preferably, the molecular formula of the doped cobalt tetroxide is Co x A ly M z O 4 , wherein M is selected from Mg, Ti, Zr, Nb, La, Y, Ni or Mn. At least one, 2≤x≤3, 0<y≤0.5, 0≤z≤0.5, 8x+9y+6z=24.
作为一个总的发明构思,本发明还提供一种上述的掺杂型四氧化三钴的制备方法,包括以下步骤:As a general inventive concept, the present invention also provides a preparation method of the above-mentioned doped cobalt tetroxide, comprising the following steps:
(1)按照化学计量比,配制可溶性混合盐溶液和碳酸氢铵溶液,所述可溶性混合盐溶液是指可溶性钴盐和可溶性含掺杂元素盐的混合溶液;(1) According to the stoichiometric ratio, prepare a soluble mixed salt solution and an ammonium bicarbonate solution, and the soluble mixed salt solution refers to a mixed solution of a soluble cobalt salt and a soluble doped element salt;
(2)向反应釜中加入纯水作为底液,调节底液的pH=7.1±0.05;(2) add pure water as bottom liquid in the reactor, adjust the pH=7.1±0.05 of bottom liquid;
(3)采用并流加液方式,将可溶性混合盐溶液、碳酸氢铵溶液同时加入反应釜中进行反应,控制反应过程中反应体系的pH为7.1±0.05;(3) adopting the mode of co-current addition, adding the soluble mixed salt solution and the ammonium bicarbonate solution to the reaction kettle simultaneously for reaction, and controlling the pH of the reaction system in the reaction process to be 7.1 ± 0.05;
(4)将反应釜满液位溢流出来的浆料进行静置澄清,去掉上清液,控制浆料的固含量,并将浆料重新返回到反应釜中进行反应,直至反应达到目标粒度后停止进料;(4) The slurry overflowing from the full liquid level of the reactor is allowed to stand for clarification, the supernatant is removed, the solid content of the slurry is controlled, and the slurry is returned to the reactor for reaction until the reaction reaches the target particle size stop feeding;
(5)将步骤(4)反应后得到的物料洗涤,烘干,过筛,煅烧,得到掺杂型四氧化三钴。(5) washing, drying, sieving and calcining the material obtained after the reaction in step (4) to obtain doped cobalt tetroxide.
该制备过程中通过控制较低并且恒定的pH值,加快了颗粒的生长速率,在相对较快的生长速率下,控制高转速可有效促进颗粒的分散,防止团聚,使得掺杂元素的共沉淀效果更加均匀。而现有技术中通常采用相对较高的pH值,其目的是为了控制较低的生长速率,防止团聚,但是申请人通过研究发现生长速率过慢,并不利于实现铝的均匀掺杂,并且在共沉淀过程中,pH值的改变也将破坏元素掺杂的均匀性;因此,本发明将pH值控制得很低,并且是恒定不变的,同时采用高转速、低温与较低的pH值组合,即利用高转速解决了颗粒在生长过程中易团聚的问题,利用较低的温度控制以提供适宜的成核速度,在共沉淀反应过程中不发生团聚的前提下,可得到形貌较好、铝掺杂较为均匀的小颗粒掺杂型单晶或类单晶四氧化三钴。In the preparation process, the growth rate of the particles is accelerated by controlling a low and constant pH value. At a relatively fast growth rate, controlling the high rotation speed can effectively promote the dispersion of the particles, prevent agglomeration, and make the co-precipitation of doping elements. The effect is more even. In the prior art, a relatively high pH value is usually used, the purpose of which is to control a lower growth rate and prevent agglomeration, but the applicant found through research that the growth rate is too slow, which is not conducive to achieving uniform doping of aluminum, and During the co-precipitation process, the change of pH value will also destroy the uniformity of element doping; therefore, the present invention controls the pH value to be very low and constant, and simultaneously adopts high rotational speed, low temperature and low pH Value combination, that is, using high speed to solve the problem of easy agglomeration of particles during growth, using lower temperature control to provide a suitable nucleation speed, and under the premise that agglomeration does not occur during the co-precipitation reaction, the morphology can be obtained. Preferably, small-grain doped single crystal or quasi-single crystal cobalt tetroxide with relatively uniform aluminum doping.
上述的制备方法,优选的,步骤(4)中,控制浆料固含量为40-50%,反应釜中浆料目标粒度为2-4μm。In the above preparation method, preferably, in step (4), the solid content of the slurry is controlled to be 40-50%, and the target particle size of the slurry in the reaction kettle is 2-4 μm.
上述的制备方法,优选的,步骤(3)中,反应过程的温度为40-50℃,反应釜搅拌器的搅拌转速为800-1000rpm。进一步优选的,反应过程的温度为40-45℃,反应釜搅拌器的转速为800-850rpm。In the above preparation method, preferably, in step (3), the temperature of the reaction process is 40-50° C., and the stirring speed of the reactor stirrer is 800-1000 rpm. Further preferably, the temperature of the reaction process is 40-45° C., and the rotating speed of the reactor stirrer is 800-850 rpm.
上述的制备方法,优选的,步骤(1)中,可溶性混合盐溶液的浓度为100-140g/L,碳酸氢铵的浓度为200-240g/L;In the above preparation method, preferably, in step (1), the concentration of the soluble mixed salt solution is 100-140g/L, and the concentration of ammonium bicarbonate is 200-240g/L;
步骤(3)中,可溶性混合盐溶液通入反应釜的流量为80-100mL/min。进一步优选的,混合盐溶液的流量为85±5ml/min。In step (3), the flow rate that the soluble mixed salt solution passes into the reactor is 80-100 mL/min. Further preferably, the flow rate of the mixed salt solution is 85±5ml/min.
上述的制备方法,优选的,步骤(5)中,洗涤是指物料采用热纯水和碳酸氢铵溶液交替洗涤,热水温度为70-80℃,碳酸氢铵溶液浓度为80-120g/L;烘干温度为100-120℃。In the above-mentioned preparation method, preferably, in step (5), washing means that the material is washed alternately with hot pure water and ammonium bicarbonate solution, the hot water temperature is 70-80 ° C, and the concentration of ammonium bicarbonate solution is 80-120 g/L ; The drying temperature is 100-120℃.
上述的制备方法,优选的,步骤(5)中,煅烧是指在350℃下恒温烧结2-3小时,然后在900-950℃下烧结3-9小时;煅烧过程在空气气氛中进行,气体流量为10-15L/h。In the above preparation method, preferably, in step (5), calcining refers to sintering at a constant temperature of 350°C for 2-3 hours, and then sintering at 900-950°C for 3-9 hours; the calcination process is carried out in an air atmosphere, and the gas The flow rate is 10-15L/h.
与现有技术相比,本发明的优点在于:Compared with the prior art, the advantages of the present invention are:
(1)本发明的掺杂型四氧化三钴为单晶或类单晶团聚体形貌,与常规的二次团聚体形貌的四氧化三钴相比,其压实密度明显更高,为合成高能量密度的钴酸锂正极材料提供了保证。(1) The doped tricobalt tetroxide of the present invention has a single crystal or quasi-single crystal agglomerate morphology. Compared with the conventional secondary agglomerate morphology, its compaction density is significantly higher, which is a good way to synthesize high-energy-density cobalt tetroxide. Lithium cobalt oxide cathode material provides assurance.
(2)本发明的制备方法中,通过控制较低并且恒定的pH值,加快了颗粒的生长速率,在相对较快的生长速率下,控制高转速可有效促进颗粒的分散,防止团聚,使得掺杂元素的共沉淀效果更加均匀,得到形貌较好、Al掺杂较为均匀的小颗粒掺杂型单晶或类单晶四氧化三钴。(2) In the preparation method of the present invention, by controlling a low and constant pH value, the growth rate of the particles is accelerated, and at a relatively fast growth rate, controlling the high rotation speed can effectively promote the dispersion of the particles, prevent agglomeration, and make The co-precipitation effect of doping elements is more uniform, and small-grain doped single crystal or quasi-single crystal cobalt tetroxide with better morphology and more uniform Al doping can be obtained.
(3)本发明的制备方法,通过采用高转速和浆料循环利用的工艺特点,使得湿法合成工艺过程生成的碳酸钴晶核更细小,四氧化三钴半成品粒度更小,形貌均匀性更好,颗粒更加密实。(3) The preparation method of the present invention, by adopting the technological characteristics of high rotational speed and slurry recycling, makes the cobalt carbonate crystal nucleus generated in the wet synthesis process smaller, the semi-finished cobalt tetroxide particle size smaller, and the morphology uniformity better, The particles are more compact.
(4)本发明的制备方法,通过高温段烧结使得碳酸钴在烧结过程中钴与铝更好的融合,同比二次球颗粒中四氧化三钴掺杂铝更容易形成片状偏析形貌,而本发明的单晶或类单晶四氧化三钴中Al不存在偏析,结合共沉淀工艺和烧结技术,使掺杂Al元素更容易掺杂到四氧化三钴晶格中。(4) The preparation method of the present invention makes cobalt carbonate better fuse with aluminum during the sintering process by sintering at high temperature, and it is easier to form a flaky segregation morphology than cobalt tetroxide doped aluminum in the secondary spherical particles, and the present invention There is no segregation of Al in the single crystal or quasi-single crystal cobalt tetroxide. Combined with the co-precipitation process and sintering technology, the doped Al element is easier to be doped into the cobalt tetroxide lattice.
附图说明Description of drawings
图1为本发明实施例1制得的掺杂型碳酸钴颗粒在50000倍电镜下的示意图。FIG. 1 is a schematic diagram of the doped cobalt carbonate particles obtained in Example 1 of the present invention under a 50,000-fold electron microscope.
图2为本发明实施例1制得的掺杂型四氧化三钴颗粒粒度分布图。2 is a particle size distribution diagram of the doped cobalt tetroxide obtained in Example 1 of the present invention.
图3为本发明实施例1制得的掺杂型四氧化三钴颗粒在50000倍电镜下的示意图。3 is a schematic diagram of the doped cobalt tetroxide particles obtained in Example 1 of the present invention under a 50,000-fold electron microscope.
图4为本发明实施例1制得的掺杂型四氧化三钴颗粒在20000倍电镜下的示意图。4 is a schematic diagram of the doped cobalt tetroxide particles obtained in Example 1 of the present invention under a 20,000-fold electron microscope.
图5为本发明实施例1制得的掺杂型四氧化三钴颗粒在10000倍电镜下的示意图。5 is a schematic diagram of the doped cobalt tetroxide particles obtained in Example 1 of the present invention under a 10,000-fold electron microscope.
图6为本发明实施例1制得的掺杂型四氧化三钴颗粒剖面示意图。6 is a schematic cross-sectional view of the doped cobalt tetroxide particles prepared in Example 1 of the present invention.
图7为本发明实施例1制得的掺杂型四氧化三钴剖面元素均匀性分布图。FIG. 7 is a distribution diagram of the element uniformity of the cross-section of the doped cobalt tetroxide prepared in Example 1 of the present invention.
图8为本发明实施例1制得的掺杂型四氧化三钴颗粒相结构分析图。8 is an analysis diagram of the phase structure of the doped cobalt tetroxide particles prepared in Example 1 of the present invention.
图9为本发明实施例2制得的掺杂型碳酸钴颗粒在50000倍电镜下的示意图。9 is a schematic diagram of the doped cobalt carbonate particles obtained in Example 2 of the present invention under a 50,000-fold electron microscope.
图10为本发明实施例2制得的掺杂型四氧化三钴颗粒粒度分布图。10 is a particle size distribution diagram of the doped cobalt tetroxide obtained in Example 2 of the present invention.
图11为本发明实施例2制得的掺杂型四氧化三钴颗粒在50000倍电镜下的示意图。11 is a schematic diagram of the doped cobalt tetroxide particles obtained in Example 2 of the present invention under a 50,000-fold electron microscope.
图12为本发明实施例2制得的掺杂型四氧化三钴颗粒在30000倍电镜下的示意图。12 is a schematic diagram of the doped cobalt tetroxide particles obtained in Example 2 of the present invention under a 30,000-fold electron microscope.
图13为本发明实施例2制得的掺杂型四氧化三钴颗粒在10000倍电镜下的示意图。13 is a schematic diagram of the doped cobalt tetroxide particles obtained in Example 2 of the present invention under a 10,000-fold electron microscope.
图14为本发明实施例2制得的掺杂型四氧化三钴颗粒剖面示意图。14 is a schematic cross-sectional view of the doped cobalt tetroxide particles prepared in Example 2 of the present invention.
图15为本发明实施例2制得的掺杂型四氧化三钴剖面元素均匀性分布图。15 is a distribution diagram of the element uniformity of the cross-section of the doped cobalt tetroxide prepared in Example 2 of the present invention.
图16为本发明实施例2制得的掺杂型四氧化三钴颗粒相结构分析图。16 is an analysis diagram of the phase structure of the doped cobalt tetroxide particles prepared in Example 2 of the present invention.
图17为本发明对比例1制得的碳酸钴颗粒在50000倍电镜下的示意图。17 is a schematic diagram of the cobalt carbonate particles obtained in Comparative Example 1 of the present invention under a 50,000-fold electron microscope.
图18为本发明对比例1制得的四氧化三钴颗粒粒度分布图。Fig. 18 is a particle size distribution diagram of cobalt tetroxide obtained in Comparative Example 1 of the present invention.
图19为本发明对比例1制得的四氧化三钴颗粒在50000倍电镜下的示意图。19 is a schematic diagram of the cobalt tetroxide particles obtained in Comparative Example 1 of the present invention under a 50,000-fold electron microscope.
图20为本发明对比例1制得的四氧化三钴颗粒在30000倍电镜下的示意图。20 is a schematic diagram of the cobalt tetroxide particles obtained in Comparative Example 1 of the present invention under a 30,000-fold electron microscope.
图21为本发明对比例1制得的四氧化三钴颗粒在10000倍电镜下的示意图。21 is a schematic diagram of the cobalt tetroxide particles obtained in Comparative Example 1 of the present invention under a 10,000-fold electron microscope.
图22为本发明对比例1制得的四氧化三钴颗粒剖面示意图。22 is a schematic cross-sectional view of the cobalt tetroxide particles prepared in Comparative Example 1 of the present invention.
图23为本发明对比例1制得的四氧化三钴剖面元素均匀性分布图。FIG. 23 is a distribution diagram of element uniformity in the cross-section of cobalt tetroxide prepared in Comparative Example 1 of the present invention.
图24为本发明对比例1制得的四氧化三钴颗粒相结构分析图。24 is an analysis diagram of the phase structure of cobalt tetroxide particles prepared in Comparative Example 1 of the present invention.
具体实施方式Detailed ways
为了便于理解本发明,下文将结合说明书附图和较佳的实施例对本文发明做更全面、细致地描述,但本发明的保护范围并不限于以下具体实施例。In order to facilitate understanding of the present invention, the present invention will be described more comprehensively and in detail below with reference to the accompanying drawings and preferred embodiments of the specification, but the protection scope of the present invention is not limited to the following specific embodiments.
除非另有定义,下文中所使用的所有专业术语与本领域技术人员通常理解含义相同。本文中所使用的专业术语只是为了描述具体实施例的目的,并不是旨在限制本发明的保护范围。Unless otherwise defined, all technical terms used hereinafter have the same meaning as commonly understood by those skilled in the art. The technical terms used herein are only for the purpose of describing specific embodiments, and are not intended to limit the protection scope of the present invention.
除非另有特别说明,本发明中用到的各种原材料、试剂、仪器和设备等均可通过市场购买得到或者可通过现有方法制备得到。Unless otherwise specified, various raw materials, reagents, instruments and equipment used in the present invention can be purchased from the market or can be prepared by existing methods.
实施例1:Example 1:
一种本发明的掺杂型四氧化三钴前驱体,分子式为Co 2.97Al 0.027O 4,形貌为单晶颗粒,一次晶粒尺寸为400nm,311晶面半峰宽为0.25,掺杂型四氧化三钴的粒度D 10=2.72μm,D 50=4.52μm,D 90=6.73μm;粒度分布(D 90-D 10)/D 50=0.88,振实密度TD=1.77g/cm 3,松装密度=1.25g/cm 3,(BET-2.5)/(TD-1.5)=0.91。 A doped type cobalt tetroxide precursor of the present invention, the molecular formula is Co 2.97 Al 0.027 O 4 , the morphology is a single crystal particle, the primary grain size is 400nm, the half-peak width of the 311 crystal plane is 0.25, and the particle size of the doped type cobalt tetroxide is D 10 =2.72 μm, D 50 =4.52 μm, D 90 =6.73 μm; particle size distribution (D 90 -D 10 )/D 50 =0.88, tap density TD=1.77 g/cm 3 , bulk density=1.25 g /cm 3 , (BET-2.5)/(TD-1.5)=0.91.
本实施例的掺杂行四氧化三钴前驱体的制备方法,包括以下步骤:The preparation method of the doped cobalt tetroxide precursor in this embodiment includes the following steps:
(1)按照Co 2.97Al 0.027O 4的化学计量比配制金属离子总浓度(铝离子和钴离子)为110g/l的可溶性混合盐溶液; (1) according to the stoichiometric ratio of Co 2.97 Al 0.027 O 4 to prepare a soluble mixed salt solution with a total concentration of metal ions (aluminum ions and cobalt ions) of 110 g/l;
(2)在50L反应釜中加入10L纯水作为反应釜底液,往反应釜底液中泵入一定量的碳酸氢铵溶液,调节底液的pH值为7.1;(2) in 50L reactor, add 10L pure water as reactor bottom liquid, pump a certain amount of ammonium bicarbonate solution into the reactor bottom liquid, and adjust the pH value of bottom liquid to be 7.1;
(3)开启反应釜的搅拌装置,转速控制在800rpm,反应釜温度控制45℃,再将220g/L碳酸氢铵溶液、110g/L混合盐溶液同时泵入反应釜中进行反应,混合盐溶液的流量为85mL/min,碳酸氢铵的流量随着pH=7.1的恒定而调节;(3) open the stirring device of the reactor, the rotating speed is controlled at 800rpm, the temperature of the reactor is controlled at 45 ℃, then 220g/L ammonium bicarbonate solution, 110g/L mixed salt solution are pumped into the reactor simultaneously to react, the mixed salt solution The flow rate of ammonium bicarbonate is 85mL/min, and the flow rate of ammonium bicarbonate is adjusted with the constant pH=7.1;
(4)随着进料持续进行,反应釜液位满后,将溢流出来的浆料静置20min,同时去掉部分上清液,将浆料的固含量控制在40%,浆料重新返回反应釜中,每1小时重复该步骤一次;(4) As the feeding continues, after the liquid level of the reactor is full, let the overflowed slurry stand for 20 minutes, remove part of the supernatant at the same time, control the solid content of the slurry at 40%, and return the slurry In the reactor, repeat this step once every 1 hour;
(5)待反应达到目标粒度D50=2.5μm后停止进料,将浆料从反应釜底部溢流口放出,收集到的物料与溢流物料混合在一起后,通过离心机并利用纯水和碳酸氢铵交替洗涤,纯水温度控制在70℃,碳酸氢铵浓度控制在110g/l,直至洗水pH<8;然后将洗涤物料通过热风烘箱干燥,干燥温度为110℃,烘干后的物料水分<10%,烘干后的物料经过325目筛网筛分,得到筛分物料;该筛分物料在50000倍电镜下的照片如图1所示;(5) After the reaction reaches the target particle size D50=2.5μm, stop feeding, discharge the slurry from the overflow port at the bottom of the reactor, and mix the collected material with the overflow material, pass through a centrifuge and use pure water and Ammonium bicarbonate was alternately washed, the temperature of pure water was controlled at 70°C, and the concentration of ammonium bicarbonate was controlled at 110g/l, until the pH of the washing water was less than 8; When the moisture content of the material is less than 10%, the dried material is screened by a 325-mesh screen to obtain a screened material; the photo of the screened material under a 50,000 times electron microscope is shown in Figure 1;
(6)将步骤(5)得到的筛分物料在空气气氛中煅烧(气体流量12L/h),先在350℃煅烧3小时、再在950℃煅烧4小时,得到的粉末经过筛分,得到掺杂型四氧化三钴,密封保存。(6) calcining the sieved material obtained in step (5) in an air atmosphere (gas flow rate 12 L/h), first at 350° C. for 3 hours, and then at 950° C. for 4 hours, and the obtained powder is sieved to obtain Doped cobalt tetroxide, sealed and preserved.
本实施例制备的掺杂型四氧化三钴的扫描电镜图如图3-5所示,由图可知,该掺杂型四氧化三钴呈单晶形貌,一次颗粒粒度为400nm,二次粒度D 10=2.72μm,D 50=4.52μm,D 90=6.73μm;粒度分布(D 90-D 10)/D 50=0.88(见图2的粒度分析),振实密度为1.77g/cm 3,比表面积为2.7m 2/g,松装密度为1.25g/cm 3The SEM images of the doped cobalt tetroxide prepared in this example are shown in Figures 3-5. It can be seen from the figures that the doped cobalt tetroxide has a single crystal morphology, the primary particle size is 400 nm, and the secondary particle size D 10 =2.72 μm , D 50 =4.52 μm, D 90 =6.73 μm; particle size distribution (D 90 -D 10 )/D 50 =0.88 (see the particle size analysis in Figure 2 ), the tap density is 1.77 g/cm 3 , and the specific surface area is 2.7 m 2 /g, and the bulk density was 1.25 g/cm 3 .
本实施例制备的掺杂型四氧化三钴剖面示意图如图6所示,剖面示意图的元素均匀性分布图如图7所示,由图可知该前驱体掺杂的铝元素分布较为均匀。The cross-sectional schematic diagram of the doped cobalt tetroxide prepared in this example is shown in FIG. 6 , and the element uniformity distribution diagram of the cross-sectional schematic diagram is shown in FIG. 7 . It can be seen from the figure that the distribution of aluminum elements doped with the precursor is relatively uniform.
本实施例制备的掺杂型四氧化三钴的XRD图谱如图8所示,由图可知该前驱体的311晶面半峰宽为0.25。The XRD pattern of the doped cobalt tetroxide prepared in this example is shown in FIG. 8 , and it can be seen from the figure that the half width of the 311 crystal plane of the precursor is 0.25.
实施例2:Example 2:
一种本发明的掺杂型四氧化三钴,分子式为Co 2.97Al 0.02Mg 0.01O 4,其形貌为类单晶团聚体,一次晶粒尺寸为300nm,311晶面半峰宽为0.3,掺杂型四氧化三钴的粒度为D 10=2.22μm,D 50=4.3μm,D 90=6.42μm;粒度分布(D 90-D 10)/D 50=0.97,振实密度TD=2.05g/cm 3,松装密度=1.25g/cm 3,(BET-2.5)/(TD-1.5)=0.73。 A doped type of cobalt tetroxide of the present invention, the molecular formula is Co 2.97 Al 0.02 Mg 0.01 O 4 , the morphology is a quasi-single crystal agglomerate, the primary grain size is 300nm, the half-peak width of the 311 crystal plane is 0.3, and the doped type The particle size of cobalt tetroxide is D 10 =2.22μm, D 50 =4.3μm, D 90 =6.42μm; particle size distribution (D 90 -D 10 )/D 50 =0.97, tap density TD=2.05g/cm 3 , loose packing Density=1.25g/ cm3 , (BET-2.5)/(TD-1.5)=0.73.
本实施例的掺杂型四氧化三钴的制备方法,包括以下步骤:The preparation method of the doped cobalt tetroxide in this embodiment includes the following steps:
(1)按照Co 2.97Al 0.02Mg 0.01O 4的化学计量比,配制金属离子总浓度(钴离子和掺杂金属离子)为110g/l的可溶性混合盐溶液; (1) According to the stoichiometric ratio of Co 2.97 Al 0.02 Mg 0.01 O 4 , prepare a soluble mixed salt solution with a total concentration of metal ions (cobalt ions and doped metal ions) of 110 g/l;
(2)在50L反应釜中加入10L纯水作为反应釜底液,往反应釜底液中泵入一定量的碳酸氢铵溶液,调节底液的pH值为7.1;(2) in 50L reactor, add 10L pure water as reactor bottom liquid, pump a certain amount of ammonium bicarbonate solution into the reactor bottom liquid, and adjust the pH value of bottom liquid to be 7.1;
(3)开启反应釜的搅拌装置,转速控制在900rpm,反应釜温度控制45℃,再将230g/l碳酸氢铵、110g/l的混合盐溶液同时泵入反应釜中进行反应,混合盐溶液的流量为90ml/min,碳酸氢铵的流量随着pH=7.15的恒定而调节;(3) open the stirring device of the reactor, the rotating speed is controlled at 900rpm, and the temperature of the reactor is controlled at 45 ℃, and then the mixed salt solution of 230g/l ammonium bicarbonate and 110g/l is simultaneously pumped into the reactor to react, and the mixed salt solution The flow rate of ammonium bicarbonate is 90ml/min, and the flow rate of ammonium bicarbonate is adjusted with the constant pH=7.15;
(4)随着进料持续进行,将溢流出来的浆料静置20min,同时去掉部分上清液,控制浆料的固含量为45%,并将浆料重新返回反应釜中;该过程每1小时重复一次;(4) As the feeding continues, let the overflowed slurry stand for 20 minutes, remove part of the supernatant at the same time, control the solid content of the slurry to be 45%, and return the slurry to the reactor; this process Repeat every 1 hour;
(5)待反应达到目标粒度D50=2.5μm后,将浆料从反应釜底部溢流口放出,收集到的物料与溢流物料混合在一起后,通过离心机并利用纯水和碳酸氢铵交替洗涤,纯水温度控制在70℃,碳酸氢铵浓度控制在110g/l,直至洗水pH<8;(5) After the reaction reaches the target particle size D50 = 2.5 μm, the slurry is discharged from the overflow port at the bottom of the reactor. After the collected material is mixed with the overflow material, it is passed through a centrifuge using pure water and ammonium bicarbonate. Alternate washing, the temperature of pure water is controlled at 70 °C, and the concentration of ammonium bicarbonate is controlled at 110 g/l, until the pH of the washing water is less than 8;
(6)将步骤(5)得到的洗涤物料通过热风烘箱干燥(干燥温度为110℃),控制烘干后物料水分<10%,烘干后的物料经过325目筛网筛分,得到筛分物料;该筛分物料在50000倍电镜下的照片如图9所示;(6) drying the washing material obtained in step (5) through a hot air oven (drying temperature is 110° C.), controlling the moisture content of the dried material to be less than 10%, and sieving the dried material through a 325 mesh screen to obtain a screening material; the photo of the sieved material under the electron microscope at 50,000 times is shown in Figure 9;
(7)将筛分物料在空气气氛中煅烧(气体流量12L/h),先在350℃煅烧3小时、再在950℃煅烧4小时,得到的粉末经过筛分,得到掺杂型四氧化三钴,密封保存。(7) calcining the sieved material in an air atmosphere (gas flow rate 12L/h), first calcining at 350°C for 3 hours, and then calcining at 950°C for 4 hours, the obtained powder is sieved to obtain doped cobalt tetroxide, sealed save.
本实施例制备的掺杂型四氧化三钴的扫描电镜图如图11-13所示,由图可知,掺杂型四氧化三钴的形貌为类单晶,一次颗粒粒度为300nm,二次粒度D 10=2.22μm,D 50=4.3μm,D 90=6.42μm;粒度分布(D 90-D 10)/D 50=0.97(见图10的粒度分析),振实密度为2.05g/cm 3,比表面积为2.9m 2/g,松装密度为1.25g/cm 3The SEM images of the doped cobalt tetroxide prepared in this example are shown in Figures 11-13. It can be seen from the figures that the morphology of the doped cobalt tetroxide is quasi-single crystal, the primary particle size is 300 nm, and the secondary particle size D 10 =2.22 μm, D 50 =4.3 μm, D 90 =6.42 μm; particle size distribution (D 90 -D 10 )/D 50 =0.97 (see the particle size analysis in Fig. 10 ), the tap density is 2.05 g/cm 3 , and the specific surface area is 2.9m 2 /g, and the bulk density is 1.25g/cm 3 .
图14为本实施例制备的掺杂型四氧化三钴的剖面示意图,图15为本实施例制备的掺杂型四氧化三钴的元素均匀性分布图,图16为本实施例制备的掺杂型四氧化三钴的XRD图谱,可以看出其311晶面半峰宽为0.3。14 is a schematic cross-sectional view of the doped cobalt tetroxide prepared in this example, FIG. 15 is an element uniformity distribution diagram of the doped cobalt tetroxide prepared in this example, and FIG. 16 is an XRD pattern of the doped cobalt tetroxide prepared in this example. , it can be seen that its 311 crystal plane half width is 0.3.
对比例1:Comparative Example 1:
本对比例的掺杂型四氧化三钴,分子式为Co 2.97Al 0.03O 4The molecular formula of the doped cobalt tetroxide of this comparative example is Co 2.97 Al 0.03 O 4 .
本对比例的四氧化三钴的制备方法,包括以下步骤:The preparation method of the cobalt tetroxide of this comparative example comprises the following steps:
(1)按照分子式的化学计量比配制金属离子(钴离子和铝离子)总浓度为110g/L的可溶性混合盐溶液;(1) according to the stoichiometric ratio of the molecular formula, prepare a soluble mixed salt solution with a total concentration of 110 g/L of metal ions (cobalt ions and aluminum ions);
(2)在50L反应釜中加入10L纯水作为反应釜底液,同时加入5L碳酸氢铵;(2) in 50L reactor, add 10L pure water as reactor bottom liquid, add 5L ammonium bicarbonate simultaneously;
(3)开启反应釜的搅拌装置,转速控制在800rpm,反应釜温度控制45℃,再将220g/L的碳酸氢铵和混合盐溶液同时加入反应釜中进行反应,混合盐溶液的流量为86mL/min,碳酸氢铵的流量95mL/min;(3) open the stirring device of the reactor, the rotating speed is controlled at 800rpm, and the temperature of the reactor is controlled at 45 ℃, then the ammonium bicarbonate of 220g/L and the mixed salt solution are added simultaneously in the reactor to react, and the flow of the mixed salt solution is 86mL /min, the flow rate of ammonium bicarbonate is 95mL/min;
(4)随着反应进行,当液位满釜后,停止进料,静置,待反应釜澄清后,抽上清液,然后再重新返回反应釜中;(4) as the reaction proceeds, when the liquid level is full of the kettle, stop feeding, let stand, and after the reactor is clarified, pump the supernatant, and then return to the reactor again;
(5)重复步骤(4)直至反应达到目标粒度D50=3.5μm后,将浆料从反应釜底部溢流口放出,收集到的物料通过离心机并利用纯水和碳酸氢铵交替洗涤,纯水温度控制在70℃,碳酸氢铵浓度控制在110g/L,直至洗水pH<8;(5) Repeat step (4) until the reaction reaches the target particle size D50=3.5 μm, discharge the slurry from the overflow port at the bottom of the reactor, and the collected material is washed alternately with pure water and ammonium bicarbonate through a centrifuge, and the pure The water temperature is controlled at 70℃, and the concentration of ammonium bicarbonate is controlled at 110g/L until the pH of the washing water is less than 8;
(6)将步骤(5)得到的洗涤物料通过热风烘箱干燥,干燥温度为110℃,烘干后的物料水分<10%,烘干后的物料经过325目筛网筛分,得到筛分物料;该筛分物料在50000倍电镜下的照片如图17所示;(6) drying the washing material obtained in step (5) through a hot air oven, the drying temperature is 110° C., the moisture content of the dried material is less than 10%, and the dried material is sieved through a 325-mesh screen to obtain a sieved material ; The photo of the screening material under the electron microscope at 50,000 times is shown in Figure 17;
(7)将筛分物料在空气气氛中煅烧(气体流量12L/h),先在350℃煅烧3小时、再在950℃煅烧4小时,得到的粉末经过筛分,得到四氧化三钴,密封保存。(7) calcining the sieved material in an air atmosphere (gas flow rate 12L/h), first calcining at 350°C for 3 hours, and then calcining at 950°C for 4 hours, the obtained powder is sieved to obtain cobalt tetroxide, which is sealed and stored.
本对比例制备的四氧化三钴的扫描电镜图如图19-21所示,由图可知该掺杂型四氧化三钴呈多晶结构,一次颗粒粒度为200nm,该掺杂型四氧化三钴的二次粒度D 10=2.54μm,D 50=5.06μm,D 90=10.37μm;粒度分布(D 90-D 10)/D 50=1.54(见图18的粒度分析),该四氧化三钴的振实密度为1.77g/cm 3,比表面积为5.2m 2/g,松装密度为1.25g/cm 3The SEM images of the cobalt tetroxide prepared in this comparative example are shown in Figures 19-21. It can be seen from the figures that the doped cobalt tetroxide has a polycrystalline structure, the primary particle size is 200 nm, and the secondary particle size of the doped cobalt tetroxide D 10 =2.54 μm, D 50 =5.06 μm, D 90 =10.37 μm; particle size distribution (D 90 -D 10 )/D 50 =1.54 (see the particle size analysis in Figure 18 ), the tap density of the cobalt tetroxide is 1.77 g/cm 3 , The specific surface area was 5.2 m 2 /g, and the bulk density was 1.25 g/cm 3 .
本对比例制备的掺杂型四氧化三钴的剖面示意图如图22所示,元素均匀性分布图如图23所示,由图可知其该前驱体掺杂的铝元素的分布均匀性明显不如实施例1,这是由于碳酸钴的粒度以及碳酸钴形貌的差异导致了四氧化三钴的差异。The cross-sectional schematic diagram of the doped cobalt tetroxide prepared in this comparative example is shown in Figure 22, and the element uniformity distribution diagram is shown in Figure 23. It can be seen from the figure that the distribution uniformity of the aluminum element doped by the precursor is obviously inferior to that of Example 1. , which is due to the difference in the particle size of cobalt carbonate and the difference in the morphology of cobalt carbonate leading to the difference in cobalt tetroxide.
本对比例制备的掺杂型四氧化三钴的XRD示意图如图24所示,由图可知其311晶面半峰宽为0.25。The XRD schematic diagram of the doped cobalt tetroxide prepared in this comparative example is shown in Figure 24, and it can be seen from the figure that the half-peak width of the 311 crystal plane is 0.25.

Claims (10)

  1. 一种掺杂型四氧化三钴,其特征在于,所述掺杂型四氧化三钴的形貌为单晶颗粒或者为类单晶团聚体,所述掺杂型四氧化三钴的一次晶粒尺寸为200-500nm,311晶面半峰宽为0.2-0.6。A doped cobalt tetroxide, characterized in that the morphology of the doped cobalt tetroxide is a single crystal particle or a quasi-single crystal agglomerate, and the primary grain size of the doped cobalt tetroxide is 200-500 nm, 311 crystals The half-width of the plane is 0.2-0.6.
  2. 如权利要求1所述的掺杂型四氧化三钴,其特征在于,所述掺杂型四氧化三钴的粒度为D 10≥1μm,D 50=2-6μm,D 90≤10μm,粒度分布(D 90-D 10)/D 50≤1.1。 The doped cobalt tetroxide according to claim 1, wherein the particle size of the doped cobalt tetroxide is D 10 ≥ 1 μm, D 50 =2-6 μm, D 90 ≤10 μm, and the particle size distribution is (D 90 -D 10 ) )/D 50 ≤1.1.
  3. 如权利要求1所述的掺杂型四氧化三钴,其特征在于,所述掺杂型四氧化三钴的比表面积BET满足关系式0.5≤(BET-2.5)/(TD-1.5)≤1,其中,振实密度TD≥1.5g/cm 3,松装密度≥1.1g/cm 3The doped cobalt tetroxide according to claim 1, wherein the specific surface area BET of the doped cobalt tetroxide satisfies the relational expression 0.5≤(BET-2.5)/(TD-1.5)≤1, wherein the tap density TD≥1.5g/cm 3 , bulk density≥1.1g/cm 3 .
  4. 如权利要求1-3中任一项所述的掺杂型四氧化三钴,其特征在于,所述掺杂型四氧化三钴的分子式为Co xAl yM zO 4,其中,M选自Mg、Ti、Zr、Nb、La、Y、Ni或Mn中的至少一种,2≤x≤3,0<y≤0.5,0≤z≤0.5,8x+9y+6z=24。 The doped cobalt tetroxide according to any one of claims 1-3, wherein the molecular formula of the doped cobalt tetroxide is Co x A ly M z O 4 , wherein M is selected from Mg, Ti, Zr , at least one of Nb, La, Y, Ni or Mn, 2≤x≤3, 0<y≤0.5, 0≤z≤0.5, 8x+9y+6z=24.
  5. 一种如权利要求1-4中任一项所述的掺杂型四氧化三钴的制备方法,其特征在于,包括以下步骤:A preparation method of doped cobalt tetroxide according to any one of claims 1-4, characterized in that, comprising the following steps:
    (1)按照化学计量比配制可溶性混合盐溶液,所述可溶性混合盐溶液是指可溶性钴盐和可溶性含掺杂元素盐的混合溶液;(1) Prepare a soluble mixed salt solution according to a stoichiometric ratio, and the soluble mixed salt solution refers to a mixed solution of a soluble cobalt salt and a soluble doping element salt;
    配制碳酸氢铵溶液;Prepare ammonium bicarbonate solution;
    (2)向反应釜中加入纯水作为底液,调节底液的pH=7.1±0.05;(2) add pure water as bottom liquid in the reactor, adjust the pH=7.1 ± 0.05 of bottom liquid;
    (3)采用并流加液方式,将可溶性混合盐溶液、碳酸氢铵溶液同时加入反应釜中进行反应,控制反应过程中反应体系的pH为7.1±0.05;(3) adopting the mode of co-current addition, adding the soluble mixed salt solution and the ammonium bicarbonate solution to the reaction kettle simultaneously for reaction, and controlling the pH of the reaction system in the reaction process to be 7.1 ± 0.05;
    (4)将反应釜满液位溢流出来的浆料进行静置澄清,去掉上清液,控制浆料的固含量,并将浆料重新返回到反应釜中进行反应,直至反应达到目标粒度后停止进料;(4) The slurry overflowing from the full liquid level of the reactor is allowed to stand for clarification, the supernatant is removed, the solid content of the slurry is controlled, and the slurry is returned to the reactor for reaction until the reaction reaches the target particle size stop feeding;
    (5)将步骤(4)反应后得到的物料洗涤,烘干,过筛,煅烧,得到掺杂型四氧化三钴。(5) washing, drying, sieving and calcining the material obtained after the reaction in step (4) to obtain doped cobalt tetroxide.
  6. 如权利要求5所述的制备方法,其特征在于,步骤(4)中,控制浆料固含量为40-50%,反应釜中浆料目标粒度为2-4μm。The preparation method according to claim 5, characterized in that, in step (4), the solid content of the slurry is controlled to be 40-50%, and the target particle size of the slurry in the reactor is 2-4 μm.
  7. 如权利要求5所述的制备方法,其特征在于,步骤(3)中,反应釜的温度为40-50℃,反应釜搅拌器的搅拌转速为800-1000rpm。The preparation method according to claim 5, characterized in that, in step (3), the temperature of the reaction kettle is 40-50 DEG C, and the stirring speed of the agitator of the reaction kettle is 800-1000rpm.
  8. 如权利要求5所述的制备方法,其特征在于,步骤(1)中,可溶性混合盐溶液的浓度为100-140g/L,碳酸氢铵的浓度为200-240g/L;The preparation method of claim 5, wherein in step (1), the concentration of the soluble mixed salt solution is 100-140g/L, and the concentration of ammonium bicarbonate is 200-240g/L;
    步骤(3)中,可溶性混合盐溶液通入反应釜的流量为80-100mL/min。In step (3), the flow rate that the soluble mixed salt solution passes into the reactor is 80-100 mL/min.
  9. 如权利要求5-8中任一项所述的制备方法,其特征在于,步骤(5)中,洗涤是指物料采用热纯水和碳酸氢铵溶液交替洗涤,热水温度为70-80℃,碳酸氢铵溶液浓度为80-120g/L; 烘干温度为100-120℃。The preparation method according to any one of claims 5-8, characterized in that, in step (5), washing means that the material is washed alternately with hot pure water and ammonium bicarbonate solution, and the hot water temperature is 70-80° C. , the concentration of ammonium bicarbonate solution is 80-120g/L; the drying temperature is 100-120℃.
  10. 如权利要求5-8中任一项所述的制备方法,其特征在于,步骤(5)中,煅烧是指在350℃下恒温烧结2-3小时,然后在900-950℃下烧结3-9小时;煅烧过程在空气气氛中进行,气体流量为10-15L/h。The preparation method according to any one of claims 5-8, characterized in that, in step (5), calcining refers to constant temperature sintering at 350°C for 2-3 hours, and then sintering at 900-950°C for 3-3 hours. 9 hours; the calcination process is carried out in an air atmosphere, and the gas flow rate is 10-15L/h.
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CN115215381A (en) * 2022-07-22 2022-10-21 广东邦普循环科技有限公司 Manganese-doped cobaltosic oxide and preparation method and application thereof
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CN115676906A (en) * 2022-10-26 2023-02-03 荆门市格林美新材料有限公司 Bimetal alternately-doped cobaltosic oxide and preparation method and application thereof
CN117623401A (en) * 2023-11-27 2024-03-01 科立鑫(珠海)新能源有限公司 Aluminum-doped cobalt carbonate and preparation method and application thereof
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CN115106044A (en) * 2022-06-30 2022-09-27 金川集团股份有限公司 Device and method for continuously producing aluminum-doped cobalt carbonate
CN115215381A (en) * 2022-07-22 2022-10-21 广东邦普循环科技有限公司 Manganese-doped cobaltosic oxide and preparation method and application thereof
CN115215381B (en) * 2022-07-22 2024-01-05 广东邦普循环科技有限公司 Manganese doped cobaltosic oxide and preparation method and application thereof
CN115520903A (en) * 2022-09-21 2022-12-27 青海泰丰先行锂能科技有限公司 Preparation method of wide-particle-size-distribution doped cobaltosic oxide and positive electrode material
CN115676906A (en) * 2022-10-26 2023-02-03 荆门市格林美新材料有限公司 Bimetal alternately-doped cobaltosic oxide and preparation method and application thereof
CN115676906B (en) * 2022-10-26 2024-04-16 荆门市格林美新材料有限公司 Double-metal alternate doped cobaltosic oxide and preparation method and application thereof
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CN117819612A (en) * 2024-01-08 2024-04-05 科立鑫(珠海)新能源有限公司 Preparation process of doped cobaltosic oxide
CN117819612B (en) * 2024-01-08 2024-06-11 科立鑫(珠海)新能源有限公司 Preparation process of doped cobaltosic oxide

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