WO2022105704A1 - Buffer circuit, integrated circuit, and electronic device - Google Patents

Buffer circuit, integrated circuit, and electronic device Download PDF

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WO2022105704A1
WO2022105704A1 PCT/CN2021/130568 CN2021130568W WO2022105704A1 WO 2022105704 A1 WO2022105704 A1 WO 2022105704A1 CN 2021130568 W CN2021130568 W CN 2021130568W WO 2022105704 A1 WO2022105704 A1 WO 2022105704A1
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circuit
buffer circuit
switches
driving
driving units
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PCT/CN2021/130568
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French (fr)
Chinese (zh)
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刘广辉
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维沃移动通信有限公司
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    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/003Modifications for increasing the reliability for protection
    • H03K19/00315Modifications for increasing the reliability for protection in field-effect transistor circuits
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/003Modifications for increasing the reliability for protection
    • H03K19/0033Radiation hardening
    • H03K19/00338In field effect transistor circuits
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/003Modifications for increasing the reliability for protection
    • H03K19/00346Modifications for eliminating interference or parasitic voltages or currents
    • H03K19/00361Modifications for eliminating interference or parasitic voltages or currents in field effect transistor circuits

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
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  • Mathematical Physics (AREA)
  • Electronic Switches (AREA)
  • Logic Circuits (AREA)

Abstract

Provided are a buffer circuit (100), an integrated circuit, and an electronic device. The buffer circuit (100) comprises: M driving units (101), M first switches (102), and M second switches (103), M being a positive integer greater than 1. First ends of the M driving units (101) are respectively connected to a power supply by means of the M first switches (102), and are grounded by means of the M second switches (103); second ends of the M driving units (101) are connected to each other as an input end of the buffer circuit (100); third ends of the M driving units (101) are connected to each other as an output end of the buffer circuit (100). The M first switches (102) and the M second switches (103) are used for controlling a working mode of the M driving units (101); the M driving units (101) are used for amplifying signals received by the input end of the buffer circuit (100), so as to output a driving signal of the driving capability corresponding to the working mode at the output end of the buffer circuit (100); the working mode is used for representing the driving capability of the M driving units (101).

Description

缓冲器电路、集成电路及电子设备Buffer circuits, integrated circuits and electronic equipment
相关申请的交叉引用CROSS-REFERENCE TO RELATED APPLICATIONS
本申请主张在2020年11月17日在中国提交的中国专利申请No.202011284228.X的优先权,其全部内容通过引用包含于此。This application claims priority to Chinese Patent Application No. 202011284228.X filed in China on Nov. 17, 2020, the entire contents of which are incorporated herein by reference.
技术领域technical field
本申请属于摄影技术领域,具体涉及一种缓冲器电路、集成电路及电子设备。The present application belongs to the field of photography technology, and specifically relates to a buffer circuit, an integrated circuit and an electronic device.
背景技术Background technique
目前,显示屏驱动集成电路(Integrated Circuit,IC)的时钟模块通常会增加缓冲器电路做输出波形整形,缓冲器电路的输出信号给后端分频或时序模块做参考时钟使用。At present, a buffer circuit is usually added to the clock module of a display driver integrated circuit (IC) for output waveform shaping, and the output signal of the buffer circuit is used as a reference clock for the back-end frequency division or timing module.
传统的缓冲器电路,为了保证不会有功能性风险,通常会为其设置一定的驱动能力,然而驱动能力设置的不恰当往往会产生较强的电磁干扰(Electromagnetic Interference,EMI)。这些EMI干扰会辐射耦合至与其距离较近的天线,且驱动IC通常与天线呈平行耦合形态,导致EMI干扰辐射耦合到天线的效率比较高。In order to ensure that there is no functional risk, a traditional snubber circuit is usually set with a certain driving capability. However, an improper setting of the driving capability often results in strong Electromagnetic Interference (EMI). These EMI interferences will be radiated and coupled to the antenna that is close to it, and the driver IC is usually coupled in parallel with the antenna, resulting in high efficiency of EMI interference radiation coupled to the antenna.
如此,现有技术中缓冲器电路存在EMI性能比较差的问题。In this way, the snubber circuit in the prior art has the problem of poor EMI performance.
发明内容SUMMARY OF THE INVENTION
本申请实施例的目的是提供一种缓冲器电路、集成电路及电子设备,能够解决现有技术中缓冲器电路存在EMI性能比较差的问题。The purpose of the embodiments of the present application is to provide a buffer circuit, an integrated circuit and an electronic device, which can solve the problem of poor EMI performance in the buffer circuit in the prior art.
为了解决上述技术问题,本申请是这样实现的:In order to solve the above technical problems, this application is implemented as follows:
第一方面,本申请实施例提供了一种缓冲器电路,包括M个驱动单元、M个第一开关和M个第二开关,M为大于1的正整数;其中,In a first aspect, an embodiment of the present application provides a buffer circuit, including M driving units, M first switches and M second switches, where M is a positive integer greater than 1; wherein,
所述M个驱动单元的第一端分别通过所述M个第一开关连接电源,并分别通过所述M个第二开关接地,所述M个驱动单元的第二端彼此连接作 为所述缓冲器电路的输入端,所述M个驱动单元的第三端彼此连接作为所述缓冲器电路的输出端;The first terminals of the M driving units are respectively connected to the power supply through the M first switches, and are grounded respectively through the M second switches, and the second terminals of the M driving units are connected to each other as the buffer the input end of the buffer circuit, the third ends of the M driving units are connected to each other as the output end of the buffer circuit;
所述M个第一开关和所述M个第二开关用于控制所述M个驱动单元的工作模式,所述M个驱动单元用于对所述缓冲器电路的输入端接收到的信号进行放大,以在所述缓冲器电路的输出端输出所述工作模式对应的驱动能力的驱动信号,所述工作模式用于表征所述M个驱动单元的驱动能力。The M first switches and the M second switches are used to control the working modes of the M driving units, and the M driving units are used to perform the signal received at the input end of the buffer circuit. Amplification is performed to output a drive signal of a drive capability corresponding to the working mode at the output end of the buffer circuit, where the working mode is used to represent the drive capability of the M drive units.
第二方面,本申请实施例提供了一种电子设备,包括时钟发生器和第一方面所述的缓冲器电路。In a second aspect, an embodiment of the present application provides an electronic device, including a clock generator and the buffer circuit described in the first aspect.
本申请实施例中,通过引入M个驱动单元、M个第一开关和M个第二开关,并通过这M个第一开关和M个第二开关控制所述M个驱动单元的工作模式,使得所述M个驱动单元可以对所述缓冲器电路的输入端接收到的信号进行放大,以输出所述工作模式对应的驱动能力的驱动信号。这样,在多个第一开关和多个第二开关的控制下,可以灵活调节缓冲器电路输出的驱动能力,从而在保证缓冲器电路的性能可靠性的前提下,可以灵活调节其EMI性能,进而可以优化缓冲器电路的EMI性能。In the embodiment of the present application, by introducing M driving units, M first switches and M second switches, and controlling the working modes of the M driving units through the M first switches and M second switches, The M driving units can amplify the signal received by the input end of the buffer circuit, so as to output the driving signal with the driving capability corresponding to the working mode. In this way, under the control of the plurality of first switches and the plurality of second switches, the driving capability of the output of the buffer circuit can be flexibly adjusted, so that the EMI performance of the buffer circuit can be flexibly adjusted on the premise of ensuring the performance reliability of the buffer circuit. In turn, the EMI performance of the snubber circuit can be optimized.
附图说明Description of drawings
图1是本申请实施例提供的缓冲器电路的结构图之一;FIG. 1 is one of the structural diagrams of a buffer circuit provided by an embodiment of the present application;
图2是显示屏驱动IC和天线在电子设备上的关系示意图;Figure 2 is a schematic diagram of the relationship between a display screen driver IC and an antenna on an electronic device;
图3是M个驱动单元的版图实现示意图;Fig. 3 is the layout realization schematic diagram of M drive units;
图4是第一驱动单元的具体结构图;Fig. 4 is the concrete structure diagram of the first drive unit;
图5是本申请实施例提供的缓冲器电路的结构图之二;FIG. 5 is a second structural diagram of a buffer circuit provided by an embodiment of the present application;
图6是NMOS管的输入电压V GS与漏极电流I D的关系示意图; FIG. 6 is a schematic diagram of the relationship between the input voltage V GS of the NMOS tube and the drain current ID;
图7是NMOS管的输入电压V GS对于漏极电流I D的控制示意图; FIG. 7 is a schematic diagram of the control of the input voltage V GS of the NMOS tube to the drain current ID;
图8是缓冲器电路的输出端输出的驱动信号的示意图;8 is a schematic diagram of a drive signal output by an output end of a buffer circuit;
图9是各驱动信号的频谱信号示意图。FIG. 9 is a schematic diagram of spectrum signals of each driving signal.
具体实施方式Detailed ways
下面将结合本申请实施例中的附图,对本申请实施例中的技术方案进行 清楚、完整地描述,显然,所描述的实施例是本申请一部分实施例,而不是全部的实施例。基于本申请中的实施例,本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例,都属于本申请保护的范围。The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, rather than all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative work fall within the protection scope of the present application.
本申请的说明书和权利要求书中的术语“第一”、“第二”等是用于区别类似的对象,而不用于描述特定的顺序或先后次序。应该理解这样使用的数据在适当情况下可以互换,以便本申请的实施例能够以除了在这里图示或描述的那些以外的顺序实施,且“第一”、“第二”等所区分的对象通常为一类,并不限定对象的个数,例如第一对象可以是一个,也可以是多个。此外,说明书以及权利要求中“和/或”表示所连接对象的至少其中之一,字符“/”,一般表示前后关联对象是一种“或”的关系。The terms "first", "second" and the like in the description and claims of the present application are used to distinguish similar objects, and are not used to describe a specific order or sequence. It is to be understood that the data so used are interchangeable under appropriate circumstances so that the embodiments of the present application can be practiced in sequences other than those illustrated or described herein, and distinguish between "first", "second", etc. The objects are usually of one type, and the number of objects is not limited. For example, the first object may be one or more than one. In addition, "and/or" in the description and claims indicates at least one of the connected objects, and the character "/" generally indicates that the associated objects are in an "or" relationship.
下面结合附图,通过具体的实施例及其应用场景对本申请实施例提供的电路进行详细地说明。The circuits provided by the embodiments of the present application will be described in detail below with reference to the accompanying drawings through specific embodiments and application scenarios.
参见图1,图1是本申请实施例提供的缓冲器电路的结构图之一,如图1所示,所述缓冲器电路100包括M个驱动单元101、M个第一开关102和M个第二开关103,M为大于1的正整数;其中,Referring to FIG. 1, FIG. 1 is a structural diagram of a buffer circuit provided by an embodiment of the present application. As shown in FIG. 1, the buffer circuit 100 includes M driving units 101, M first switches 102, and M In the second switch 103, M is a positive integer greater than 1; wherein,
所述M个驱动单元101的第一端分别通过所述M个第一开关102连接电源,并分别通过所述M个第二开关103接地,所述M个驱动单元101的第二端彼此连接作为所述缓冲器电路100的输入端,所述M个驱动单元101的第三端彼此连接作为所述缓冲器电路100的输出端;The first terminals of the M driving units 101 are respectively connected to the power source through the M first switches 102 and grounded through the M second switches 103 respectively, and the second terminals of the M driving units 101 are connected to each other As the input end of the buffer circuit 100, the third ends of the M driving units 101 are connected to each other as the output end of the buffer circuit 100;
所述M个第一开关102和所述M个第二开关103用于控制所述M个驱动单元101的工作模式,所述M个驱动单元101用于对所述缓冲器电路100的输入端接收到的信号进行放大,以在所述缓冲器电路100的输出端输出所述工作模式对应的驱动能力的驱动信号,所述工作模式用于表征所述M个驱动单元的驱动能力。The M first switches 102 and the M second switches 103 are used to control the working modes of the M driving units 101 , and the M driving units 101 are used for the input terminals of the buffer circuit 100 The received signal is amplified to output a drive signal corresponding to the drive capability of the working mode at the output end of the buffer circuit 100 , and the working mode is used to represent the drive capability of the M drive units.
本实施例中,所述缓冲器电路100可以设置在驱动IC中,所述驱动IC的时钟模块可增加该缓冲器电路100,用于对时钟信号进行放大,并对该时钟信号做输出波形整形,以给后端分频或时序模块做参考时钟使用。In this embodiment, the buffer circuit 100 can be set in the driver IC, and the buffer circuit 100 can be added to the clock module of the driver IC to amplify the clock signal and shape the output waveform of the clock signal , to be used as a reference clock for the back-end frequency division or timing module.
所述驱动IC可以是显示屏驱动IC,也可以其他模块的驱动IC,这里不做具体限定。其中,缓冲器电路100在工作时可能会产生较强的EMI干扰, 这些EMI干扰会耦合辐射至与驱动IC距离较近的其他模块如天线,产生EMI问题,以下以缓冲器电路100设置于显示屏驱动IC中为例进行详细说明。The driver IC may be a display screen driver IC or a driver IC of other modules, which is not specifically limited here. Among them, the buffer circuit 100 may generate strong EMI interference during operation, and the EMI interference will be coupled and radiated to other modules such as antennas that are close to the driver IC, resulting in EMI problems. The buffer circuit 100 is shown below. The screen driver IC is used as an example for detailed description.
参见图2,图2是显示屏驱动IC和天线在电子设备上的关系示意图,如图2所示,电子设备产品在全面屏的外观驱使下,显示屏驱动IC与天线的距离已经是亚毫米级。并且,由于显示屏驱动IC这种窄长方形结构,模块间走线拉的比较长,使得显示屏驱动IC的EMI干扰对外辐射效率较高。而且,显示屏驱动IC与天线呈平行耦合形态,导致EMI干扰辐射耦合到天线的效率比较高,产生EMI问题。Referring to Figure 2, Figure 2 is a schematic diagram of the relationship between the display driver IC and the antenna on the electronic device. As shown in Figure 2, the electronic device product is driven by the appearance of the full screen, and the distance between the display driver IC and the antenna is already sub-millimeters class. In addition, due to the narrow and rectangular structure of the display driver IC, the wiring between the modules is relatively long, so that the EMI interference of the display driver IC has a high external radiation efficiency. Moreover, the display driver IC and the antenna are coupled in parallel, resulting in a relatively high efficiency of EMI interference radiation coupling to the antenna, resulting in EMI problems.
所述显示屏驱动IC包括但不限于有源矩阵有机发光二极体(Active-Matrix Organic Light-Emitting Diode,AMOLED),液晶薄膜晶体管(Thin Film Transistor,TFT)等显示设备的驱动IC。The display screen driver IC includes, but is not limited to, driver ICs for display devices such as Active-Matrix Organic Light-Emitting Diode (AMOLED), and liquid crystal thin film transistors (Thin Film Transistor, TFT).
所述缓冲器电路100包括输入端和输出端,所述缓冲器电路100的输入端可以与时钟发生器连接,所述时钟发生器用于产生时钟信号,并将该时钟信号通过该缓冲器电路100的输入端输入至该缓冲器电路100。所述缓冲器电路100的输出端输出驱动信号,该驱动信号可以给后端分频或时序模块做参考时钟使用。The buffer circuit 100 includes an input terminal and an output terminal. The input terminal of the buffer circuit 100 can be connected to a clock generator, and the clock generator is used for generating a clock signal and passing the clock signal through the buffer circuit 100 The input terminal of is input to the buffer circuit 100 . The output end of the buffer circuit 100 outputs a driving signal, and the driving signal can be used as a reference clock for the back-end frequency division or timing module.
所述M个驱动单元101中每个驱动单元101均可以与第一开关102和第二开关103连接,与驱动单元101连接的第一开关102和第二开关103可以控制该驱动单元101的工作状态,驱动单元101的工作状态包括两种,工作和不工作。在驱动单元101工作时,可以对该时钟信号进行整形,或者在该时钟信号处于高电平时,还可以对该时钟信号进行放大。Each of the M driving units 101 can be connected to the first switch 102 and the second switch 103 , and the first switch 102 and the second switch 103 connected to the driving unit 101 can control the operation of the driving unit 101 Status, the working status of the drive unit 101 includes two types, working and non-working. When the driving unit 101 is working, the clock signal may be shaped, or the clock signal may be amplified when the clock signal is at a high level.
比如,驱动单元A,与其连接的开关为第一开关A和第二开关A,若第一开关A和第二开关A均断开,则该驱动单元A不工作,而时钟信号在上升沿时即电压从低电平变至高电平时,第一开关A闭合,第二开关A断开,此时驱动单元A工作,对该时钟信号进行放大并整形,时钟信号在下降沿时即电压从高电平变至低电平时,第一开关A断开,第二开关A闭合,此时驱动单元A工作,对该时钟信号进行整形。For example, the switches connected to the drive unit A are the first switch A and the second switch A. If the first switch A and the second switch A are both disconnected, the drive unit A does not work, and the clock signal is on the rising edge. That is, when the voltage changes from a low level to a high level, the first switch A is closed, and the second switch A is disconnected. At this time, the drive unit A works, amplifies and shapes the clock signal, and when the clock signal falls on the falling edge, the voltage changes from high to high. When the level changes to a low level, the first switch A is turned off, and the second switch A is turned on. At this time, the driving unit A works to shape the clock signal.
在实际应用中,若驱动单元101工作时,可以通过检测时钟信号的上升沿和下降沿来控制第一开关102和第二开关103的开闭,在检测到时钟信号 的上升沿时,控制第一开关102闭合,第二开关103断开,在检测到时钟信号的下降沿时,控制第二开关103闭合,第一开关102断开。In practical applications, if the driving unit 101 is working, it can control the opening and closing of the first switch 102 and the second switch 103 by detecting the rising edge and falling edge of the clock signal, and when detecting the rising edge of the clock signal, control the One switch 102 is closed, and the second switch 103 is open. When the falling edge of the clock signal is detected, the second switch 103 is controlled to be closed, and the first switch 102 is opened.
所述M个驱动单元101的工作状态可以决定所述M个驱动单元101的工作模式,且M不同,其工作模式的种类也不同,当M为2时,其工作模式包括三种,当M为3时,其工作模式包括7种,M越大,其工作模式的种类也就越多。M以3为例,分别包括驱动单元A,驱动单元B,驱动单元C,所述M个驱动单元101的工作模式如下表1所示。The working states of the M driving units 101 can determine the working modes of the M driving units 101, and different M has different types of working modes. When M is 2, there are three working modes. When it is 3, its working mode includes 7 kinds, and the larger M is, the more kinds of its working mode are. Taking 3 as an example, M includes a driving unit A, a driving unit B, and a driving unit C, respectively. The operating modes of the M driving units 101 are shown in Table 1 below.
表1 M个驱动单元的工作模式Table 1 Working mode of M drive units
工作模式Operating mode 驱动单元Adrive unit A 驱动单元Bdrive unit B 驱动单元Cdrive unit C
工作模式1working mode 1 11 11 11
工作模式2work mode 2 11 11 00
工作模式3work mode 3 11 00 11
工作模式4work mode 4 11 00 00
工作模式5work mode 5 00 11 11
工作模式6work mode 6 00 11 00
工作模式7work mode 7 00 00 11
上表中,当M等于3时,包括7种工作模式,1表示驱动单元101工作,0表示驱动单元101不工作,每种工作模式中,这3个驱动单元101的工作状态的组合均不同,且驱动单元101的工作状态是由第一开关102和第二开关103控制,因此,可以通过寄存器状态控制所述M个第一开关102和M个第二开关103的开关组合,来控制这3个驱动单元101的工作模式。比如,当M等于3时,可以用3位二进制来表征这3个驱动单元101的工作模式,工作模式1的寄存器状态为111,工作模式2的寄存器状态为110。In the above table, when M is equal to 3, it includes 7 working modes, 1 means that the drive unit 101 is working, 0 means that the drive unit 101 is not working, and in each working mode, the combinations of the working states of the three drive units 101 are different. , and the working state of the driving unit 101 is controlled by the first switch 102 and the second switch 103, therefore, the switch combination of the M first switches 102 and the M second switches 103 can be controlled through the register state to control this The working modes of the 3 drive units 101 . For example, when M is equal to 3, the working modes of the three driving units 101 can be represented by 3-bit binary, the register state of working mode 1 is 111, and the register state of working mode 2 is 110.
并且,所述工作模式用于表征所述M个驱动单元的驱动能力,且每种工作模式输出的驱动信号的驱动能力可以不同,所述M个驱动单元的驱动能力可以用驱动电流或驱动电压来表征,驱动电流或驱动电压越大,驱动能力越大,驱动电流或驱动电压越小,驱动能力越小。由于所述M个驱动单元101的第二端彼此连接作为所述缓冲器电路100的输入端,所述M个驱动单元101 的第三端彼此连接作为所述缓冲器电路100的输出端,可知,所述M个驱动单元101是并联连接,版图实现可以如图3所示,其驱动能力是每个驱动单元101的驱动能力的叠加。比如,驱动单元A的驱动电流为8毫安(mA),驱动单元B的驱动电流为4mA,驱动单元C的驱动电流为2mA,则工作模式1对应的驱动电流为14mA。In addition, the operating modes are used to represent the driving capabilities of the M driving units, and the driving capabilities of the driving signals output by each operating mode may be different, and the driving capabilities of the M driving units may be driven by a driving current or a driving voltage. To characterize, the larger the driving current or the driving voltage, the larger the driving ability, and the smaller the driving current or the driving voltage, the smaller the driving ability. Since the second terminals of the M driving units 101 are connected to each other as the input terminals of the buffer circuit 100, and the third terminals of the M driving units 101 are connected to each other as the output terminals of the buffer circuit 100, it can be seen that , the M driving units 101 are connected in parallel, and the layout can be implemented as shown in FIG. 3 , and the driving capability thereof is the superposition of the driving capability of each driving unit 101 . For example, if the drive current of drive unit A is 8 milliamps (mA), the drive current of drive unit B is 4 mA, and the drive current of drive unit C is 2 mA, the drive current corresponding to operating mode 1 is 14 mA.
由于所述M个驱动单元101的工作模式对应不同的驱动电流,因此,在缓冲器电路100的输出端输出的驱动信号(该驱动信号可以为电压信号)也不同。Since the operating modes of the M driving units 101 correspond to different driving currents, the driving signals (the driving signals may be voltage signals) output at the output end of the buffer circuit 100 are also different.
另外,所述M个驱动单元101中每个驱动单元101的驱动电流可以相同,也可以不同,其驱动电流可以取决于通过第一开关102连接的电源,连接的电源的电压值越大,驱动电流也越大,连接的电源的电压值越小,驱动电流也越小。In addition, the driving current of each driving unit 101 in the M driving units 101 may be the same or different, and the driving current may depend on the power supply connected through the first switch 102 . The larger the current, the smaller the voltage value of the connected power supply, and the smaller the drive current.
以第一驱动单元为例,第一驱动单元为所述M个驱动单元101中任一驱动单元101。参见图4,图4是第一驱动单元的具体结构图,如图4所示,第一驱动单元包括N型金属氧化物半导体(N-Metal-Oxide-SemIConductor,NMOS)管1011和P型金属氧化物半导体(P-Metal-Oxide-SemIConductor,PMOS)管1012;Taking the first driving unit as an example, the first driving unit is any one of the M driving units 101 . Referring to FIG. 4, FIG. 4 is a specific structural diagram of the first driving unit. As shown in FIG. 4, the first driving unit includes an N-Metal-Oxide-Semiconductor (NMOS) transistor 1011 and a P-type metal Oxide semiconductor (P-Metal-Oxide-Semiconductor, PMOS) tube 1012;
所述PMOS管1012的源极通过第一目标开关1021连接电压,并通过第二目标开关1031接地,所述NMOS管1011的源极接地;其中,所述第一目标开关为所述M个第一开关102中任一开关,所述第二目标开关为所述M个第二开关103中任一开关;The source of the PMOS transistor 1012 is connected to the voltage through the first target switch 1021, and is grounded through the second target switch 1031, and the source of the NMOS transistor 1011 is grounded; wherein, the first target switch is the Mth Any one of the switches 102, the second target switch is any one of the M second switches 103;
所述PMOS管1012的栅极和所述NMOS管1011的栅极彼此连接作为所述缓冲器电路100的输入端,所述PMOS管1012的漏极和所述NMOS管1011的漏极彼此连接作为所述缓冲器电路100的输出端。The gate of the PMOS transistor 1012 and the gate of the NMOS transistor 1011 are connected to each other as the input terminal of the buffer circuit 100, and the drain of the PMOS transistor 1012 and the drain of the NMOS transistor 1011 are connected to each other as the input terminal of the buffer circuit 100. the output of the buffer circuit 100 .
上述第一驱动单元的输出即缓冲器电路100的输出端的输出为末级推挽输出,通过将M个驱动单元101的末级推挽输出并联,达到驱动电流叠加的效果。The output of the first driving unit, that is, the output of the output terminal of the buffer circuit 100 is the final push-pull output. By connecting the final push-pull outputs of the M driving units 101 in parallel, the effect of superposition of driving currents is achieved.
在第一目标开关闭合,第二目标开关断开时,PMOS管的源极连接至电源,所述NMOS管1011的栅极和源极之间的电压在达到导通条件的情况下 导通。NMOS管1011导通后,连接的电源的电压值越大,NMOS管1011的漏极和源极之间的电压越大,漏极电流即驱动电流相应越大。在第一目标开关断开,第二目标开关闭合时,PMOS管的源极接地,驱动单元101输出低电平即零电平。When the first target switch is turned on and the second target switch is turned off, the source of the PMOS transistor is connected to the power supply, and the voltage between the gate and the source of the NMOS transistor 1011 is turned on when the on condition is reached. After the NMOS transistor 1011 is turned on, the greater the voltage value of the connected power supply, the greater the voltage between the drain and the source of the NMOS transistor 1011, and the correspondingly greater the drain current, that is, the driving current. When the first target switch is turned off and the second target switch is turned on, the source of the PMOS transistor is grounded, and the driving unit 101 outputs a low level, that is, a zero level.
因此,可以通过设置与驱动单元101连接的电源的电压值,来设置驱动单元101的驱动电流,这样,通过设置不同的电源,可以灵活设置这M个驱动单元101的驱动电流。Therefore, the driving current of the driving unit 101 can be set by setting the voltage value of the power supply connected to the driving unit 101 . In this way, by setting different power supplies, the driving current of the M driving units 101 can be flexibly set.
为了保证缓冲器电路100的输出端输出的驱动信号的驱动信号可调节的范围越大,每个驱动单元101的驱动能力即驱动电流可以不同,可以将其分为强中弱三挡,强驱动能力的驱动单元101的驱动电流相应比其他驱动单元101的驱动电流大,弱驱动能力的驱动单元101的驱动电流相应比其他驱动单元101的驱动电流小,即所述M个驱动单元101的第一端分别通过所述M个第一开关102连接的电源的电压值均不同。In order to ensure that the adjustable range of the drive signal of the drive signal output by the output end of the buffer circuit 100 is larger, the drive capability of each drive unit 101, that is, the drive current, can be different. The driving current of the driving unit 101 with high driving ability is correspondingly larger than the driving current of other driving units 101, and the driving current of the driving unit 101 with weak driving ability is correspondingly smaller than the driving current of other driving units 101, that is, the driving current of the M driving units 101 The voltage values of the power supplies whose one ends are respectively connected through the M first switches 102 are all different.
本实施例中,通过引入M个驱动单元101、M个第一开关102和M个第二开关103,并通过这M个第一开关102和M个第二开关103控制所述M个驱动单元101的工作模式,使得所述M个驱动单元101可以对所述缓冲器电路100的输入端接收到的信号进行放大,以输出所述工作模式对应的驱动能力的驱动信号。这样,在多个第一开关102和多个第二开关103的控制下,可以灵活调节缓冲器电路100输出的驱动能力,从而在保证缓冲器电路100的性能可靠性的前提下,可以灵活调节其EMI性能,进而可以优化缓冲器电路100的EMI性能。In this embodiment, M driving units 101 , M first switches 102 and M second switches 103 are introduced, and the M driving units are controlled through the M first switches 102 and M second switches 103 101, so that the M driving units 101 can amplify the signal received by the input end of the buffer circuit 100 to output the driving signal with the driving capability corresponding to the operating mode. In this way, under the control of the plurality of first switches 102 and the plurality of second switches 103 , the driving capability of the output of the buffer circuit 100 can be flexibly adjusted, so that the performance and reliability of the buffer circuit 100 can be flexibly adjusted. Its EMI performance, and then the EMI performance of the snubber circuit 100 can be optimized.
并且,通过优化缓冲器电路100的EMI性能,从而可以降低显示屏驱动IC的EMI干扰,在电子设备的全面屏下,可以降低显示屏驱动IC的EMI干扰辐射耦合到天线的效率,从而可以间接提升对空间要求比较高的全面屏产品的外观和性能竞争力。In addition, by optimizing the EMI performance of the buffer circuit 100, the EMI interference of the display driver IC can be reduced, and under the full screen of the electronic device, the efficiency of coupling the EMI interference radiation of the display driver IC to the antenna can be reduced, thereby indirectly Improve the appearance and performance competitiveness of full-screen products with high space requirements.
而且,通过使所述M个驱动单元101的工作模式可调,即使所述M个驱动单元101的驱动电流可调,从而可以保证缓冲器电路100的性能可靠性,进而可以缩短产品开发验证周期。Moreover, by making the working modes of the M driving units 101 adjustable, even if the driving currents of the M driving units 101 are adjustable, the performance reliability of the buffer circuit 100 can be ensured, and the product development and verification cycle can be shortened .
另外,通过将所述M个驱动单元100的末级推挽输出并联,即可实现这 M个驱动单元101的驱动能力可调,这在半导体工艺中很容易实现,且占用面积小,成本低。In addition, by connecting the final push-pull outputs of the M driving units 100 in parallel, the driving capability of the M driving units 101 can be adjusted, which is easy to implement in the semiconductor process, and has a small footprint and low cost .
可选的,参见图5,图5是本申请实施例提供的缓冲器电路的结构图之二,如图5所示,所述缓冲器电路100还包括第一调节子电路104;其中,Optionally, referring to FIG. 5 , FIG. 5 is a second structural diagram of a buffer circuit provided by an embodiment of the present application. As shown in FIG. 5 , the buffer circuit 100 further includes a first adjustment sub-circuit 104 ; wherein,
所述第一调节子电路104的输入端与所述缓冲器电路100的输入端连接,所述第一调节子电路104的输出端与所述M个驱动单元101的第二端连接。The input terminal of the first adjustment sub-circuit 104 is connected to the input terminal of the buffer circuit 100 , and the output terminal of the first adjustment sub-circuit 104 is connected to the second terminals of the M driving units 101 .
本实施例中,所述第一调节子电路104用于调节缓冲器电路100的输出端输出的驱动信号的上升沿时间和下降沿时间。所述第一调节子电路104可以是电阻电容(Resistance Capacitance,RC)电路,所述RC电路用于延缓所述驱动信号的上升沿和下降沿,也可以是可调节缓冲器电路100的输出端输出的驱动信号的上升沿时间和下降沿时间的其他电路,这个不做具体限定。以下实施例中,所述第一调节子电路104将以RC电路为例进行详细说明。In this embodiment, the first adjustment sub-circuit 104 is used to adjust the rising edge time and the falling edge time of the driving signal output by the output end of the buffer circuit 100 . The first adjustment sub-circuit 104 may be a resistance-capacitance (Resistance Capacitance, RC) circuit, the RC circuit is used to delay the rising edge and the falling edge of the driving signal, or may be the output end of the adjustable buffer circuit 100 Other circuits for the rising edge time and falling edge time of the output drive signal are not specifically limited. In the following embodiments, the first adjustment sub-circuit 104 will be described in detail by taking an RC circuit as an example.
RC电路可以通过芯片电阻和电容版图工艺实现,其版图设计简单。所述RC电路的输出端与所述M个驱动单元101的第二端即NMOS管1011的栅极连接。这样,在时钟发生器与驱动单元101之间设置一个RC电路,可以降低所述NMOS管1011的栅极电压,相应的,可以调整NMOS管1011的栅极和源极之间的输入电压V GS的上升沿时间,如图6所示,从而可以控制漏极和源极之间的电流I D变化,如图7所示,进而可以控制缓冲器电路100的输出端输出的驱动信号的上升时间和下降时间。 The RC circuit can be realized by the chip resistor and capacitor layout process, and its layout design is simple. The output end of the RC circuit is connected to the second end of the M driving units 101 , that is, the gate of the NMOS transistor 1011 . In this way, an RC circuit is provided between the clock generator and the driving unit 101, which can reduce the gate voltage of the NMOS transistor 1011, and correspondingly, can adjust the input voltage V GS between the gate and the source of the NMOS transistor 1011 As shown in FIG. 6 , the change of the current ID between the drain and the source can be controlled, as shown in FIG. 7 , and the rise time of the driving signal output by the output terminal of the buffer circuit 100 can be controlled. and fall time.
参见图8,图8是缓冲器电路的输出端输出的驱动信号的示意图,如图8所示,实线801表征的是上升时间和下降时间延缓前的驱动信号,即未设置RC电路的缓冲器电路100的输出端输出的驱动信号,虚线802表征的是上升时间和下降时间延缓后的驱动信号,即设置了RC电路的缓冲器电路100的输出端输出的驱动信号。Referring to FIG. 8, FIG. 8 is a schematic diagram of the drive signal output by the output end of the buffer circuit. As shown in FIG. 8, the solid line 801 represents the drive signal before the rise time and fall time are delayed, that is, the buffer of the RC circuit is not set The dashed line 802 represents the drive signal with delayed rise time and fall time, that is, the drive signal output by the output end of the buffer circuit 100 provided with the RC circuit.
分别对实线801表征的驱动信号和虚线802表征的驱动信号进行傅里叶变换后,获得各驱动信号的频谱信号,如图9所示。从图9可以看出,虚线802表征的驱动信号的频谱包络902相对于实线801表征的驱动信号的频谱包络901,其转折频率往更低频段偏移,这样,可以降低关注频段即通信频段的EMI干扰分量,从而可以改善缓冲器电路100的EMI性能。After the Fourier transform is performed on the driving signal represented by the solid line 801 and the driving signal represented by the dotted line 802 respectively, spectrum signals of each driving signal are obtained, as shown in FIG. 9 . As can be seen from FIG. 9 , the corner frequency of the spectral envelope 902 of the driving signal represented by the dotted line 802 is shifted to a lower frequency band relative to the spectral envelope 901 of the driving signal represented by the solid line 801 . EMI interference components in the communication frequency band, so that the EMI performance of the buffer circuit 100 can be improved.
在实际应用中,RC电路的时间常数可设置为目标上升沿时间的一半。In practical applications, the time constant of the RC circuit can be set to half the target rising edge time.
所述缓冲器电路100还可以包括第三开关105,所述第三开关105与所述第一调节子电路104并联,所述第三开关105在闭合时可以旁路所述第一调节子电路104。The buffer circuit 100 may further include a third switch 105 connected in parallel with the first regulating sub-circuit 104, the third switch 105 may bypass the first regulating sub-circuit when closed 104.
可选的,如图5所示,所述缓冲器电路100还包括第二调节子电路106;其中,Optionally, as shown in FIG. 5 , the buffer circuit 100 further includes a second adjustment sub-circuit 106; wherein,
所述第二调节子电路106的输入端与所述M个驱动单元101的第三端连接,所述第二调节子电路106的输出端作为所述缓冲器电路100的输出端。The input terminal of the second adjustment sub-circuit 106 is connected to the third terminals of the M driving units 101 , and the output terminal of the second adjustment sub-circuit 106 serves as the output terminal of the buffer circuit 100 .
所述第二调节子电路106可以为由电阻组成的电路,在所述M个驱动单元101与缓冲器电路100的输出端可以串联一个多晶硅电阻,该多晶硅电阻的电阻值可以在50欧姆到100欧姆之间,这样,可以进一步降低驱动单元101到接收端的电流,从而可以减缓驱动信号的上升沿和下降沿,进一步改善缓冲器电路100的EMI性能。The second adjustment sub-circuit 106 may be a circuit composed of resistors. A polysilicon resistor may be connected in series with the output ends of the M driving units 101 and the buffer circuit 100, and the resistance value of the polysilicon resistor may be 50 ohms to 100 ohms. In this way, the current from the driving unit 101 to the receiving end can be further reduced, so that the rising edge and the falling edge of the driving signal can be slowed down, and the EMI performance of the buffer circuit 100 can be further improved.
所述缓冲器电路100还可以包括第四开关107,所述第四开关107与所述第二调节子电路106并联,所述第四开关107在闭合时可以旁路所述第二调节子电路106。The buffer circuit 100 may further include a fourth switch 107, the fourth switch 107 is connected in parallel with the second regulating sub-circuit 106, and the fourth switch 107 may bypass the second regulating sub-circuit when closed 106.
本申请还提供一种集成电路,所述集成电路包括上述实施例中的缓冲器电路,所述缓冲器电路包括M个驱动单元、M个第一开关和M个第二开关,M为大于1的正整数;其中,The present application also provides an integrated circuit, the integrated circuit includes the buffer circuit in the above embodiment, the buffer circuit includes M driving units, M first switches and M second switches, where M is greater than 1 a positive integer of ; where,
所述M个驱动单元的第一端分别通过所述M个第一开关连接电源,并分别通过所述M个第二开关接地,所述M个驱动单元的第二端彼此连接作为所述缓冲器电路的输入端,所述M个驱动单元的第三端彼此连接作为所述缓冲器电路的输出端;The first terminals of the M driving units are respectively connected to the power supply through the M first switches, and are grounded respectively through the M second switches, and the second terminals of the M driving units are connected to each other as the buffer the input end of the buffer circuit, the third ends of the M driving units are connected to each other as the output end of the buffer circuit;
所述M个第一开关和所述M个第二开关用于控制所述M个驱动单元的工作模式,所述M个驱动单元用于对所述缓冲器电路的输入端接收到的信号进行放大,以在所述缓冲器电路的输出端输出所述工作模式对应的驱动能力的驱动信号,所述工作模式用于表征所述M个驱动单元的驱动能力。The M first switches and the M second switches are used to control the working modes of the M driving units, and the M driving units are used to perform the signal received at the input end of the buffer circuit. Amplification is performed to output a drive signal of a drive capability corresponding to the working mode at the output end of the buffer circuit, where the working mode is used to represent the drive capability of the M drive units.
可选的,所述缓冲器电路还包括第一调节子电路;其中,Optionally, the buffer circuit further includes a first adjustment sub-circuit; wherein,
所述第一调节子电路的输入端与所述缓冲器电路的输入端连接,所述第 一调节子电路的输出端与所述M个驱动单元的第二端连接。The input end of the first adjustment sub-circuit is connected to the input end of the buffer circuit, and the output end of the first adjustment sub-circuit is connected to the second ends of the M driving units.
可选的,所述第一调节子电路为电阻电容电路,所述电阻电容电路用于延缓所述驱动信号的上升沿和下降沿。Optionally, the first adjustment sub-circuit is a resistance-capacitance circuit, and the resistance-capacitance circuit is used to delay the rising edge and the falling edge of the driving signal.
可选的,所述缓冲器电路还包括第三开关,所述第三开关与所述第一调节子电路并联。Optionally, the buffer circuit further includes a third switch, and the third switch is connected in parallel with the first adjustment sub-circuit.
可选的,所述缓冲器电路还包括第二调节子电路;其中,Optionally, the buffer circuit further includes a second adjustment sub-circuit; wherein,
所述第二调节子电路的输入端与所述M个驱动单元的第三端连接,所述第二调节子电路的输出端作为所述缓冲器电路的输出端。The input end of the second adjusting sub-circuit is connected to the third end of the M driving units, and the output end of the second adjusting sub-circuit serves as the output end of the buffer circuit.
可选的,所述第二调节子电路为由电阻组成的电路。Optionally, the second adjustment subcircuit is a circuit composed of resistors.
可选的,所述缓冲器电路还包括第四开关,所述第四开关与所述第二调节子电路并联。Optionally, the buffer circuit further includes a fourth switch, and the fourth switch is connected in parallel with the second adjustment sub-circuit.
可选的,所述M个驱动单元的第一端分别通过所述M个第一开关连接的电源的电压值均不同。Optionally, the voltage values of the power supplies respectively connected to the first ends of the M driving units through the M first switches are different.
可选的,第一驱动单元包括P型金属氧化物半导体PMOS管和N型金属氧化物半导体NMOS管,所述第一驱动单元为所述M个驱动单元中任一驱动单元;Optionally, the first driving unit includes a P-type metal-oxide-semiconductor PMOS transistor and an N-type metal-oxide-semiconductor NMOS transistor, and the first driving unit is any one of the M driving units;
所述PMOS管的源极通过第一目标开关连接电源,并通过第二目标开关接地,所述NMOS管的源极接地;其中,所述第一目标开关为所述M个第一开关中任一开关,所述第二目标开关为所述M个第二开关中任一开关;The source of the PMOS tube is connected to the power supply through the first target switch, and is grounded through the second target switch, and the source of the NMOS tube is grounded; wherein, the first target switch is any one of the M first switches. A switch, the second target switch is any one of the M second switches;
所述PMOS管的栅极和所述NMOS管的栅极彼此连接作为所述缓冲器电路的输入端,所述PMOS管的漏极和所述NMOS管的漏极彼此连接作为所述缓冲器电路的输出端。The gate of the PMOS transistor and the gate of the NMOS transistor are connected to each other as the input end of the buffer circuit, and the drain of the PMOS transistor and the drain of the NMOS transistor are connected to each other as the buffer circuit 's output.
需要说明的是,以上集成电路中的缓冲器电路与上述实施例中的缓冲器电路的结构类似,且具有同上述实施例中缓冲器电路相同的有益效果,因此不做赘述。对于本申请实施例中未披露的技术细节,本领域的技术人员请参照上述实施例中缓冲器电路的描述而理解,为节约篇幅,这里不再赘述。It should be noted that the structure of the buffer circuit in the above integrated circuit is similar to that of the buffer circuit in the above-mentioned embodiment, and has the same beneficial effects as the buffer circuit in the above-mentioned embodiment, so it is not repeated. For technical details that are not disclosed in the embodiments of the present application, those skilled in the art should refer to the description of the buffer circuit in the above-mentioned embodiments to understand. To save space, details are not repeated here.
本实施例中,通过在集成电路中设置缓冲器电路,其中,缓冲器电路中通过引入M个驱动单元、M个第一开关和M个第二开关,并通过这M个第一开关和M个第二开关控制所述M个驱动单元的工作模式,使得所述M个 驱动单元可以对所述缓冲器电路的输入端接收到的信号进行放大,以输出所述工作模式对应的驱动能力的驱动信号。这样,在多个第一开关和多个第二开关的控制下,可以灵活调节缓冲器电路输出的驱动能力,从而在保证缓冲器电路的性能可靠性的前提下,可以灵活调节其EMI性能,优化缓冲器电路的EMI性能,进而可以优化集成电路的EMI性能。In this embodiment, a buffer circuit is provided in an integrated circuit, wherein, M driving units, M first switches and M second switches are introduced into the buffer circuit, and the M first switches and M second switches are introduced into the buffer circuit. The second switches control the operating modes of the M driving units, so that the M driving units can amplify the signals received by the input terminals of the buffer circuits to output the driving capability corresponding to the operating modes. drive signal. In this way, under the control of the plurality of first switches and the plurality of second switches, the driving capability of the output of the buffer circuit can be flexibly adjusted, so that the EMI performance of the buffer circuit can be flexibly adjusted on the premise of ensuring the performance reliability of the buffer circuit. The EMI performance of the snubber circuit is optimized, which in turn can optimize the EMI performance of the integrated circuit.
本申请还提供一种电子设备,所述电子设备包括上述实施例中的缓冲器电路和时钟发生器,所述时钟发生器的输出端与缓冲器电路的输入端连接,所述缓冲器电路包括M个驱动单元、M个第一开关和M个第二开关,M为大于1的正整数;其中,The present application also provides an electronic device, the electronic device includes the buffer circuit and the clock generator in the above embodiments, the output end of the clock generator is connected to the input end of the buffer circuit, and the buffer circuit includes M driving units, M first switches and M second switches, where M is a positive integer greater than 1; wherein,
所述M个驱动单元的第一端分别通过所述M个第一开关连接电源,并分别通过所述M个第二开关接地,所述M个驱动单元的第二端彼此连接作为所述缓冲器电路的输入端,所述M个驱动单元的第三端彼此连接作为所述缓冲器电路的输出端;The first terminals of the M driving units are respectively connected to the power supply through the M first switches, and are grounded respectively through the M second switches, and the second terminals of the M driving units are connected to each other as the buffer the input end of the buffer circuit, the third ends of the M driving units are connected to each other as the output end of the buffer circuit;
所述M个第一开关和所述M个第二开关用于控制所述M个驱动单元的工作模式,所述M个驱动单元用于对所述缓冲器电路的输入端接收到的信号进行放大,以在所述缓冲器电路的输出端输出所述工作模式对应的的驱动能力的驱动信号,所述工作模式用于表征所述M个驱动单元的驱动能力。The M first switches and the M second switches are used to control the working modes of the M driving units, and the M driving units are used to perform the signal received at the input end of the buffer circuit. Amplification is performed to output a drive signal with a drive capability corresponding to the working mode at the output end of the buffer circuit, where the working mode is used to represent the drive capability of the M drive units.
可选的,所述缓冲器电路还包括第一调节子电路;其中,Optionally, the buffer circuit further includes a first adjustment sub-circuit; wherein,
所述第一调节子电路的输入端与所述缓冲器电路的输入端连接,所述第一调节子电路的输出端与所述M个驱动单元的第二端连接。The input terminal of the first adjustment sub-circuit is connected to the input terminal of the buffer circuit, and the output terminal of the first adjustment sub-circuit is connected to the second terminals of the M driving units.
可选的,所述第一调节子电路为电阻电容电路,所述电阻电容电路用于延缓所述驱动信号的上升沿和下降沿。Optionally, the first adjustment sub-circuit is a resistance-capacitance circuit, and the resistance-capacitance circuit is used to delay the rising edge and the falling edge of the driving signal.
可选的,所述缓冲器电路还包括第三开关,所述第三开关与所述第一调节子电路并联。Optionally, the buffer circuit further includes a third switch, and the third switch is connected in parallel with the first adjustment sub-circuit.
可选的,所述缓冲器电路还包括第二调节子电路;其中,Optionally, the buffer circuit further includes a second adjustment sub-circuit; wherein,
所述第二调节子电路的输入端与所述M个驱动单元的第三端连接,所述第二调节子电路的输出端作为所述缓冲器电路的输出端。The input end of the second adjusting sub-circuit is connected to the third end of the M driving units, and the output end of the second adjusting sub-circuit serves as the output end of the buffer circuit.
可选的,所述第二调节子电路为由电阻组成的电路。Optionally, the second adjustment subcircuit is a circuit composed of resistors.
可选的,所述缓冲器电路还包括第四开关,所述第四开关与所述第二调 节子电路并联。Optionally, the buffer circuit further includes a fourth switch, and the fourth switch is connected in parallel with the second adjustment sub-circuit.
可选的,所述M个驱动单元的第一端分别通过所述M个第一开关连接的电源的电压值均不同。Optionally, the voltage values of the power supplies respectively connected to the first ends of the M driving units through the M first switches are different.
可选的,第一驱动单元包括P型金属氧化物半导体PMOS管和N型金属氧化物半导体NMOS管,所述第一驱动单元为所述M个驱动单元中任一驱动单元;Optionally, the first driving unit includes a P-type metal-oxide-semiconductor PMOS transistor and an N-type metal-oxide-semiconductor NMOS transistor, and the first driving unit is any one of the M driving units;
所述PMOS管的源极通过第一目标开关连接电源,并通过第二目标开关接地,所述NMOS管的源极接地;其中,所述第一目标开关为所述M个第一开关中任一开关,所述第二目标开关为所述M个第二开关中任一开关;The source of the PMOS tube is connected to the power supply through the first target switch, and is grounded through the second target switch, and the source of the NMOS tube is grounded; wherein, the first target switch is any one of the M first switches. a switch, the second target switch is any one of the M second switches;
所述PMOS管的栅极和所述NMOS管的栅极彼此连接作为所述缓冲器电路的输入端,所述PMOS管的漏极和所述NMOS管的漏极彼此连接作为所述缓冲器电路的输出端。The gate of the PMOS transistor and the gate of the NMOS transistor are connected to each other as the input end of the buffer circuit, and the drain of the PMOS transistor and the drain of the NMOS transistor are connected to each other as the buffer circuit 's output.
本申请实施例中的电子设备可以是移动电子设备,也可以为非移动电子设备。示例性的,移动电子设备可以为手机、平板电脑、笔记本电脑、掌上电脑、车载电子设备、可穿戴设备、超级移动个人计算机(Ultra-Mobile Personal Computer,UMPC)、上网本或者个人数字助理(Personal Digital Assistant,PDA)等,非移动电子设备可以为服务器、网络附属存储器(Network Attached Storage,NAS)、个人计算机(Personal Computer,PC)、电视机(Television,TV)、柜员机或者自助机等,本申请实施例不作具体限定。The electronic device in this embodiment of the present application may be a mobile electronic device or a non-mobile electronic device. Exemplarily, the mobile electronic device may be a mobile phone, a tablet computer, a notebook computer, a palmtop computer, an in-vehicle electronic device, a wearable device, an Ultra-Mobile Personal Computer (UMPC), a netbook, or a personal digital assistant (Personal Digital Assistant). Assistant, PDA), etc., non-mobile electronic devices can be servers, network attached storage (Network Attached Storage, NAS), personal computer (Personal Computer, PC), television (Television, TV), teller machine or self-service machine, etc., this application Examples are not specifically limited.
需要说明的是,以上电子设备中的缓冲器电路与上述实施例中的缓冲器电路的结构类似,且具有同上述实施例中缓冲器电路相同的有益效果,因此不做赘述。对于本申请实施例中未披露的技术细节,本领域的技术人员请参照上述实施例中缓冲器电路的描述而理解,为节约篇幅,这里不再赘述。It should be noted that the structure of the buffer circuit in the above electronic device is similar to that of the buffer circuit in the above-mentioned embodiment, and has the same beneficial effects as the buffer circuit in the above-mentioned embodiment, so it will not be repeated. For technical details that are not disclosed in the embodiments of the present application, those skilled in the art should refer to the description of the buffer circuit in the above-mentioned embodiments to understand. To save space, details are not repeated here.
本实施例中,电子设备的集成电路中通过设置缓冲器电路,该缓冲器电路通过引入M个驱动单元、M个第一开关和M个第二开关,并通过这M个第一开关和M个第二开关控制所述M个驱动单元的工作模式,使得所述M个驱动单元可以对所述缓冲器电路的输入端接收到的信号进行放大,以输出所述工作模式对应的驱动能力的驱动信号。这样,在多个第一开关和多个第二开关的控制下,可以灵活调节缓冲器电路输出的驱动能力,从而在保证缓 冲器电路的性能可靠性的前提下,可以灵活调节其EMI性能,优化缓冲器电路的EMI性能,进而可以优化集成电路的EMI性能,以降低芯片在通信频段内的干扰,提升电子设备产品的网络适应性性能。In this embodiment, a buffer circuit is set in the integrated circuit of the electronic device, and the buffer circuit introduces M driving units, M first switches and M second switches, and passes the M first switches and M The second switches control the operating modes of the M driving units, so that the M driving units can amplify the signals received by the input terminals of the buffer circuits to output the driving capability corresponding to the operating modes. drive signal. In this way, under the control of multiple first switches and multiple second switches, the driving capability of the output of the buffer circuit can be flexibly adjusted, so that the EMI performance of the buffer circuit can be flexibly adjusted on the premise of ensuring the performance reliability of the buffer circuit. By optimizing the EMI performance of the buffer circuit, the EMI performance of the integrated circuit can be optimized, so as to reduce the interference of the chip in the communication frequency band and improve the network adaptability performance of electronic equipment products.
上面结合附图对本申请的实施例进行了描述,但是本申请并不局限于上述的具体实施方式,上述的具体实施方式仅仅是示意性的,而不是限制性的,本领域的普通技术人员在本申请的启示下,在不脱离本申请宗旨和权利要求所保护的范围情况下,还可做出很多形式,均属于本申请的保护之内。The embodiments of the present application have been described above in conjunction with the accompanying drawings, but the present application is not limited to the above-mentioned specific embodiments, which are merely illustrative rather than restrictive. Under the inspiration of this application, without departing from the scope of protection of the purpose of this application and the claims, many forms can be made, which all fall within the protection of this application.

Claims (10)

  1. 一种缓冲器电路,包括M个驱动单元、M个第一开关和M个第二开关,M为大于1的正整数;其中,A buffer circuit includes M driving units, M first switches and M second switches, where M is a positive integer greater than 1; wherein,
    所述M个驱动单元的第一端分别通过所述M个第一开关连接电源,并分别通过所述M个第二开关接地,所述M个驱动单元的第二端彼此连接作为所述缓冲器电路的输入端,所述M个驱动单元的第三端彼此连接作为所述缓冲器电路的输出端;The first terminals of the M driving units are respectively connected to the power supply through the M first switches, and are grounded respectively through the M second switches, and the second terminals of the M driving units are connected to each other as the buffer the input end of the buffer circuit, the third ends of the M driving units are connected to each other as the output end of the buffer circuit;
    所述M个第一开关和所述M个第二开关用于控制所述M个驱动单元的工作模式,所述M个驱动单元用于对所述缓冲器电路的输入端接收到的信号进行放大,以在所述缓冲器电路的输出端输出所述工作模式对应的驱动能力的驱动信号,所述工作模式用于表征所述M个驱动单元的驱动能力。The M first switches and the M second switches are used to control the working modes of the M driving units, and the M driving units are used to perform the signal received at the input end of the buffer circuit. Amplification is performed to output a drive signal of a drive capability corresponding to the working mode at the output end of the buffer circuit, where the working mode is used to represent the drive capability of the M drive units.
  2. 根据权利要求1所述的缓冲器电路,其中,所述缓冲器电路还包括第一调节子电路;The buffer circuit of claim 1, wherein the buffer circuit further comprises a first regulation sub-circuit;
    所述第一调节子电路的输入端与所述缓冲器电路的输入端连接,所述第一调节子电路的输出端与所述M个驱动单元的第二端连接。The input terminal of the first adjustment sub-circuit is connected to the input terminal of the buffer circuit, and the output terminal of the first adjustment sub-circuit is connected to the second terminals of the M driving units.
  3. 根据权利要求2所述的电路,其中,所述第一调节子电路为电阻电容电路,所述电阻电容电路用于延缓所述驱动信号的上升沿和下降沿。The circuit according to claim 2, wherein the first adjustment sub-circuit is a resistor-capacitor circuit, and the resistor-capacitor circuit is used for delaying the rising edge and the falling edge of the driving signal.
  4. 根据权利要求2所述的缓冲器电路,其中,所述缓冲器电路还包括第三开关,所述第三开关与所述第一调节子电路并联。3. The snubber circuit of claim 2, wherein the snubber circuit further comprises a third switch in parallel with the first regulating subcircuit.
  5. 根据权利要求1至4任一项所述的缓冲器电路,其中,所述缓冲器电路还包括第二调节子电路;The buffer circuit according to any one of claims 1 to 4, wherein the buffer circuit further comprises a second adjustment sub-circuit;
    所述第二调节子电路的输入端与所述M个驱动单元的第三端连接,所述第二调节子电路的输出端作为所述缓冲器电路的输出端。The input end of the second adjusting sub-circuit is connected to the third end of the M driving units, and the output end of the second adjusting sub-circuit serves as the output end of the buffer circuit.
  6. 根据权利要求5所述的缓冲器电路,其中,所述第二调节子电路为由电阻组成的电路。The buffer circuit of claim 5, wherein the second adjustment sub-circuit is a circuit composed of resistors.
  7. 根据权利要求6所述的缓冲器电路,其中,所述缓冲器电路还包括第四开关,所述第四开关与所述第二调节子电路并联。6. The snubber circuit of claim 6, wherein the snubber circuit further comprises a fourth switch in parallel with the second regulating sub-circuit.
  8. 根据权利要求1所述的缓冲器电路,其中,所述M个驱动单元的第一 端分别通过所述M个第一开关连接的电源的电压值均不同。The buffer circuit according to claim 1, wherein the voltage values of the power supplies to which the first terminals of the M driving units are respectively connected through the M first switches are different.
  9. 根据权利要求1所述的缓冲器电路,其中,第一驱动单元包括PMOS管和NMOS管,所述第一驱动单元为所述M个驱动单元中任一驱动单元;The buffer circuit according to claim 1, wherein the first driving unit comprises a PMOS transistor and an NMOS transistor, and the first driving unit is any one of the M driving units;
    所述PMOS管的源极通过第一目标开关连接电源,并通过第二目标开关接地,所述NMOS管的源极接地;其中,所述第一目标开关为所述M个第一开关中任一开关,所述第二目标开关为所述M个第二开关中任一开关;The source of the PMOS tube is connected to the power supply through the first target switch, and is grounded through the second target switch, and the source of the NMOS tube is grounded; wherein, the first target switch is any one of the M first switches. a switch, the second target switch is any one of the M second switches;
    所述PMOS管的栅极和所述NMOS管的栅极彼此连接作为所述缓冲器电路的输入端,所述PMOS管的漏极和所述NMOS管的漏极彼此连接作为所述缓冲器电路的输出端。The gate of the PMOS transistor and the gate of the NMOS transistor are connected to each other as the input end of the buffer circuit, and the drain of the PMOS transistor and the drain of the NMOS transistor are connected to each other as the buffer circuit 's output.
  10. 一种电子设备,所述电子设备包括时钟发生器和与所述时钟发生器连接的权利要求1至9任一项所述的缓冲器电路。An electronic device comprising a clock generator and the buffer circuit of any one of claims 1 to 9 connected to the clock generator.
PCT/CN2021/130568 2020-11-17 2021-11-15 Buffer circuit, integrated circuit, and electronic device WO2022105704A1 (en)

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CN101572540A (en) * 2009-06-09 2009-11-04 中国人民解放军国防科学技术大学 Pre-emphasis circuit with configurable emphasis intensity
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