WO2022104928A1 - Mems麦克风芯片 - Google Patents

Mems麦克风芯片 Download PDF

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Publication number
WO2022104928A1
WO2022104928A1 PCT/CN2020/133718 CN2020133718W WO2022104928A1 WO 2022104928 A1 WO2022104928 A1 WO 2022104928A1 CN 2020133718 W CN2020133718 W CN 2020133718W WO 2022104928 A1 WO2022104928 A1 WO 2022104928A1
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diaphragm
mems microphone
substrate
microphone chip
base
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PCT/CN2020/133718
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English (en)
French (fr)
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柏杨
王琳琳
王凯杰
张睿
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瑞声声学科技(深圳)有限公司
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Publication of WO2022104928A1 publication Critical patent/WO2022104928A1/zh

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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R19/00—Electrostatic transducers
    • H04R19/04—Microphones
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R31/00—Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor

Definitions

  • the present application relates to the technical field of acoustics and electricity, and in particular, to a MEMS microphone chip.
  • the existing capacitive MEMS microphone chip consists of a capacitor part and a base part.
  • the chip structure 100 ′ includes a substrate 10 ′ with a back cavity, a diaphragm 20 ′ and a fixed back plate 30 ′ located on the upper part of the substrate 10 ′, and the diaphragm 20 ′ and the fixed back plate 30 ′ form a capacitor system .
  • the sound pressure acts on the diaphragm, there is a pressure difference between the two sides of the diaphragm facing the back plate and the back plate, which makes the diaphragm move towards the back plate or away from the back plate, thereby causing the capacitance between the diaphragm and the back plate.
  • the diaphragm 20' is divided into an inductive diaphragm area 21' and a non-inductive diaphragm area 22' according to functions, and the two are divided by diaphragm slits 23', wherein the inductive diaphragm area is used as a vibration electrode. Participate in signal output, non-inductive diaphragm area does not participate in signal output.
  • Frequency response low frequency In actual terminal product applications, due to the different module algorithms of the development board adapted to the MEMS microphone chip, different microphone low frequency attenuation performances need to be applied for different terminals. Especially for smart terminals with active noise reduction such as TWS headphones, since most of the ambient noise is concentrated in the low-frequency sound waves of 50-1KHz, the waveform is relatively longer and the change is relatively slow, so it is suitable for active noise reduction. Stricter requirements are placed on the low frequency attenuation (low attenuation) of MEMS microphone chips.
  • Frequency response High frequency When the receiving frequency range of the microphone reaches the ultrasonic frequency band (>20kHz, or even 40-60kHz), it can receive the position and movement of the object. Since the ultrasonic microphone has a wide working area and is not affected by light changes, so It is widely used in gesture recognition of smartphones and distance sensing of smart speakers.
  • the structure formed by connecting the sound inlet hole of the package substrate to the back cavity of the MEMS chip will generate acoustic resonance when excited by an acoustic wave. Its high frequency response is determined by the Helmholtz resonance generated by the back cavity of the microphone chip and the sound hole.
  • the back cavity boundary is placed closer to the chip than the diaphragm slit when the chip structure is designed. Therefore, the volume V C of the chip back cavity is very large, which reduces the center frequency f H of the Helmholtz resonance, which limits the high frequency response and ultrasonic performance of the MEMS microphone.
  • a H is the diameter of the sound hole of the package substrate
  • L H is the length of the sound hole of the package substrate.
  • the purpose of the present application is to provide a MEMS microphone chip that prevents the film jam phenomenon.
  • the present application provides a MEMS microphone chip
  • the MEMS microphone chip includes a substrate with a back cavity, a diaphragm disposed on the substrate, and a side disposed relative to the diaphragm away from the substrate
  • the backplane of the diaphragm; the diaphragm includes a sensing area in the middle and a non-sensing area surrounding the sensing area and spaced from the sensing area to form a diaphragm slit, and the diaphragm slit is along the diaphragm.
  • the orthographic projection of the vibration direction is located on the substrate.
  • the vibrating film extends in a direction close to the base to form a release structure spaced from the base.
  • the orthographic projection of the anti-sticking structure along the vibration direction of the diaphragm is located at the edge of the substrate on the side close to the back cavity.
  • the anti-sticking structures are arranged in one or more rows.
  • the anti-sticking structure is one or a combination of the columnar anti-sticking structure or the wall anti-sticking structure.
  • the cross-section of the columnar anti-sticking structure is one or a combination of a circle, a sector or a polygon.
  • the beneficial effect of the present application is that: a MEMS microphone chip is provided, the orthographic projection of the diaphragm slit along the vibration direction of the diaphragm is located on the substrate, that is, the diaphragm slit is compared with the backside
  • the cavity is closer to the outside of the chip.
  • FIG. 1 is a schematic structural diagram of a MEMS microphone chip provided in the prior art
  • FIG. 2 is a schematic structural diagram of a MEMS microphone chip provided by the application.
  • FIG. 3 is a schematic structural diagram of the MEMS microphone chip provided by the present application.
  • the present application provides a MEMS microphone chip 100 .
  • the chip 100 includes a substrate 10 and a capacitor system disposed on the substrate 10 .
  • the base 10 includes a back cavity 12 formed in the middle of the base 10 and a fixing portion 11 surrounding the back cavity 12 .
  • the capacitor system includes a diaphragm 20 and a back plate 30 opposite to the diaphragm 20.
  • the diaphragm 20 and the back plate 30 are spaced apart to form a cavity, and the diaphragm 20 is located between the cavity and the back cavity. Vibration between 12.
  • a plurality of through holes 31 penetrating through the back plate 30 are formed in the middle portion of the back plate 30 corresponding to the cavity, and the plurality of through holes 31 are arranged at intervals; the plurality of through holes 31 communicate with the cavity and the external environment, so that the Sonic airflow can enter or exit the cavity.
  • the diaphragm 20 includes a sensing area 21 and a non-sensing area 22 spaced around the sensing area 21 .
  • the sensing area 21 includes an anchor portion (not shown in the figure), and the anchor portion extends to the base 10 . and the anchor portion of the sensing area 21 is fixed to the fixing portion 11 of the substrate 10 .
  • the non-sensing area 22 surrounds the sensing area 21 , and the sensing area 21 and the non-sensing area 22 are spaced apart from each other to form a diaphragm slit 23 that communicates with each other. 11 phases are fixed.
  • the orthographic projection of the diaphragm slit 23 along the vibration direction of the diaphragm 20 is located on the fixing portion 11 of the base 10 , that is, the diaphragm slit 23 is opposite to the edge of the back cavity 12 .
  • 12a (boundary) is closer to the outside of the chip 100 .
  • the diaphragm slit 23 is facing the fixing portion 11 of the substrate 10 , when the microphone is working, the airflow from the back cavity 12 needs to pass through the sensing area 21 to form the substrate 10 .
  • the channel can be released only when it reaches the diaphragm slit 23, which increases the acoustic impedance R of the diaphragm slit 23, reduces the f roll-off value, makes the low decay more gentle, and the low frequency sensitivity of 50-1KHz is higher, which improves the active Noise reduction effect.
  • the boundary of the back cavity 12 is closer to the inner side of the chip 100 than the diaphragm slit 23, which greatly reduces the volume V C of the back cavity 12 and increases the center frequency f H of the Helmholtz resonance, thereby improving the MEMS Microphone high frequency response and ultrasonic performance.
  • the periphery of the back plate 30 is stepped and connected to the base 10 ; the diaphragm 20 is disposed on the base 10 and is spaced from the base 10 .
  • the back plate 30 is formed with an anti-adhesion column 32 in a cavity close to one end of the diaphragm 20 . One end is extended to prevent the vibrating membrane 20 from sticking to the back plate 30 during the vibration process.
  • the sensing area 21 of the diaphragm 20 extends in a direction close to the base 10 to form a release structure 40 , and the release structure 40 is spaced from the base 10 .
  • the diaphragm 20 vibrates towards and away from the back plate 30.
  • the anti-stick structure 40 can greatly reduce the vibration of the diaphragm 20.
  • the contact area between the sensing area 21 and the substrate 10 can be reduced to reduce the adhesive force, thereby preventing the sensing area 21 of the diaphragm 20 from being attracted on the substrate 10 and causing the failure of the MEMS microphone chip.
  • the orthographic projection of the anti-sticking structure 40 along the vibration direction of the diaphragm 20 is located at the edge 12 a of the substrate 10 on the side close to the back cavity 12 .
  • the anti-sticking structure 40 is one or a combination of the columnar anti-sticking structure or the wall anti-sticking structure.
  • the anti-sticking structures 40 in this embodiment are arranged in two rows.
  • the cross section of the columnar anti-sticking structure is one or a combination of a circle, a sector or a polygon.
  • the cross section of the columnar anti-sticking structure in the present embodiment along the direction parallel to the top surface of the fixing portion 11 of the base 10 is circular, so that the contact area between the base 10 and the columnar anti-sticking structure is reduced, thereby further The adhesive force between the base 10 and the columnar anti-stick structure is reduced, the sticking phenomenon between the diaphragm 20 and the base 10 is effectively avoided, and the reliability of the MEMS microphone is improved.
  • the MEMS microphone chips provided in the embodiments of the present application are also applicable to MEMS microphone chips having a diaphragm, a substrate and a back cavity structure, such as piezoelectric and optical MEMS microphone chips.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Signal Processing (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
  • Micromachines (AREA)
  • Pressure Sensors (AREA)

Abstract

本申请提供了一种MEMS麦克风芯片，所述MEMS麦克风芯片包括具有背腔的基底，设置于所述基底上的振膜，以及相对所述振膜远离所述基底一侧设置的背板；所述振膜包括位于中部的感应区域及环绕所述感应区域并与所述感应区域相间隙设置形成振膜狭缝的非感应区域，所述振膜狭缝沿所述振膜的振动方向的正投影位于所述基底上。本申请其振膜狭缝沿所述振膜的振动方向的正投影位于所述基底上，即所述振膜狭缝相较于所述背腔的更靠近芯片的外侧。当声压作用于振膜时，所述感应区域向靠近所述基底方向振动将振动到所述基底的上部，从而避免振膜卡在背腔的边界处造成卡膜。

Description

MEMS麦克风芯片 【技术领域】
本申请涉及声电技术领域，尤其涉及一种MEMS麦克风芯片。
【背景技术】
现有电容式MEMS麦克风芯片由电容部分和基底部分组成。如图1所示，芯片结构100’包括具有背腔的基底10’、以及位于基底10’上部的振膜20’和固定背板30’，振膜20’与固定背板30’构成电容系统。当声压作用于振膜时，振膜正对背板与背对背板的两面存在压强差，使得振膜向靠近背板或远离背板的方向运动，从而引起振膜与背板之间电容的变化，实现声音信号向电信号的转换，以上即为MEMS麦克风芯片的工作原理。现有芯片结构中，振膜20’根据功能分为感应振膜区21’和非感应振膜区22’，二者通过振膜狭缝23’进行分割，其中，感应振膜区作为振动电极参与信号输出，非感应振膜区不参与信号输出。
频率响应低频方面：实际终端产品应用中，由于与MEMS麦克风芯片适配的开发板的模组算法不同，因此针对不同终端需要应用不同的麦克风低频衰减性能。尤其是对于TWS耳机等具有主动降噪功能的智能终端，由于大部分的环境噪声集中在50～1KHz的低频声波，其波形相对更长、且变化也相对缓慢，适合用于主动降噪，因此对MEMS麦克风芯片的低频衰减(低衰)提出了更严格的要求。具有振膜狭缝结构的MEMS麦克风芯片，其振膜狭缝贯穿整个有效振膜区(感应振膜区)的周长，而过长的振膜狭缝将降低振膜的声阻抗R，使得f roll-off＝1/2πRC(其中，C为声速)值增大，低衰变得更严重。因此，振膜狭缝结构在很大程度上限制了对MEMS麦克风芯片低衰的减缓，从而影响主动降噪的效果。
频率响应高频方面：当麦克风接收频率范围达到超声频段(＞20kHz，甚至40～60kHz)时，其可以接收到物体的位置及动作，由于超声麦克风 工作区域宽、且不受光线变化影响，因此广泛用于智能手机的手势识别、智能音箱的距离感应等场景中。
而对于底部进声的MEMS麦克风，封装基板的进声孔与MEMS芯片背腔相连构成的结构在受到声波激励时将产生声学谐振。其高频频响由麦克风芯片背腔和声孔产生的Helmholtz谐振决定的。现有芯片结构中，为了避免有效振膜区在上下振动过程中卡在MEMS芯片背腔边界处造成卡膜现象，在芯片结构设计时，会将背腔边界相对于振膜狭缝更靠芯片的外侧，从而芯片背腔的体积V C很大，降低了Helmholtz谐振的中心频率f H，限制了MEMS麦克风高频响应和超声性能。
上述中心频率
Figure PCTCN2020133718-appb-000001
其中，A H为封装基板声孔的直径，L H为封装基板声孔的长度。
【发明内容】
本申请的目的在于提供了一种防止卡膜现象发生的MEMS麦克风芯片。
为达到上述目的，本申请提供了一种MEMS麦克风芯片，所述MEMS麦克风芯片包括具有背腔的基底，设置于所述基底上的振膜，以及相对所述振膜远离所述基底一侧设置的背板；所述振膜包括位于中部的感应区域及环绕所述感应区域并与所述感应区域相间隙设置形成振膜狭缝的非感应区域，所述振膜狭缝沿所述振膜的振动方向的正投影位于所述基底上。
优选的，所述振膜向靠近所述基底的方向延伸形成与所述基底间隔的防粘结构。
优选的，所述防粘结构沿所述振膜的振动方向的正投影位于所述基底靠近所述背腔一侧的边缘处。
优选的，所述防粘结构设置为一排或多排。
优选的，所述防粘结构为柱状防粘结构或墙体防粘结构中的一种或两种的组合。
优选的，所述柱状防粘结构的横截面为圆形、扇形或多边形中的一种 或多种的组合。
本申请的有益效果在于：提供了一种MEMS麦克风芯片，其振膜狭缝沿所述振膜的振动方向的正投影位于所述基底上，即所述振膜狭缝相较于所述背腔的更靠近芯片的外侧。当声压作用于振膜时，所述感应区域向靠近所述基底方向振动将振动到所述基底的上部，从而避免振膜卡在背腔的边界处造成卡膜现象的发生。
【附图说明】
图1为现有技术中提供的一种MEMS麦克风芯片的结构示意图；
图2为本申请提供的MEMS麦克风芯片的结构示意图；
图3为本申请提供的MEMS麦克风芯片的结构示意图。
【具体实施方式】
下面结合附图和实施方式对本申请作进一步说明。
需要说明的是，本申请实施例中所有方向性指示(诸如上、下、左、右、前、后、内、外、顶部、底部……)仅用于解释在某一特定姿态(如附图所示)下各部件之间的相对位置关系等，如果该特定姿态发生改变时，则该方向性指示也相应地随之改变。
参见图2，本申请提供一种MEMS麦克风芯片100，该芯片100包括基底10以及设于基底10上的电容系统。
所述基底10包括形成于基底10中部的背腔12及环绕所述背腔12的固定部11。所述电容系统包括振膜20以及与所述振膜20相对的背板30，所述振膜20与所述背板30间隔设置并形成空腔，所述振膜20在空腔和背腔12之间振动。
所述背板30与所述空腔相对应的中部形成有贯通所述背板30的多个通孔31，多个通孔31间隔设置；多个通孔31连通空腔与外界环境，使得声波气流可以进入或流出空腔。
当压力(声波)通过多个通孔31作用在所述振膜20上时。所述振膜20向靠近和远离所述背板30方向振动以使得所述振膜20与所述背板30之间电容的电容量产生变化。因此，可以生成与压力(声波)的变化相对应的电 信号，该电信号通过与所述电容系统连接的外部电路输出，最终实现麦克风的功能。
所述振膜20包括感应区域21和环绕所述感应区域21间隔设置的非感应区域22，所述感应区域21包括锚部(图中未示出)，所述锚部延伸至所述基底10的固定部11，且所述感应区域21的锚部与基底10的固定部11相固定。所述非感应区域22环绕所述感应区域21，且所述感应区域21与所述非感应区域22相间隙设置形成连通的振膜狭缝23，所述非感应区域22与基底10的固定部11相固定。
其中，所述振膜狭缝23沿所述振膜20的振动方向的正投影位于所述基底10的固定部11上，即所述振膜狭缝23相较于所述背腔12的边缘12a(边界)更靠近芯片100的外侧。当声压作用于振膜20时，所述感应区域21向靠近所述基底10方向振动将振动到所述固定部11的上部，从而避免振膜20卡在背腔12的边界处造成卡膜现象的发生。
进一步的，本申请实施例的芯片100，在低频方面，由于振膜狭缝23正对基底10的固定部11，当麦克风工作时，来自背腔12的气流需通过感应区域21与基底10构成的通道到达振膜狭缝23才能释放，增加了振膜狭缝23的声阻抗R，使f roll-off值减小，低衰变得更平缓，50-1KHz的低频灵敏度更高，提升了主动降噪的效果。
在高频方面，背腔12的边界相较于振膜狭缝23更靠近芯片100的内侧，大大降低了背腔12的体积V C，提升了Helmholtz谐振的中心频率f H，从而改善了MEMS麦克风高频响应和超声性能。
优选地，所述背板30的周缘呈台阶状，并与所述基底10连接；所述振膜20设于所述基底10之上，并与基底10间隔设置。
所述背板30在靠近振膜20一端的空腔内形成有防粘连柱32，所述防粘连柱32由背板30在多个所述通孔31之间向靠近所述振膜20的一端延伸形成，避免振膜20振动过程中与背板30相粘黏。
参见图3，在一优选实施例中，所述振膜20的感应区域21向靠近所述基底10的方向延伸形成防粘结构40，所述防粘结构40与所述基底10 相间隔。当声压作用于振膜20时，所述振膜20向靠近和远离所述背板30方向振动，当感应区域21向下振动与基底10接触时，防粘结构40可以大大降低振膜20的感应区域21与基底10之间的接触面积，降低粘附力，从而避免振膜20的感应区域21吸合在基底10上导致MEMS麦克风芯片的失效。
所述防粘结构40沿所述振膜20的振动方向的正投影位于所述基底10靠近所述背腔12一侧的边缘12a处。优选地，所述防粘结构40为柱状防粘结构或墙体防粘结构中的一种或两种的组合。本实施例中的防粘结构40为两排设置。
所述柱状防粘结构的横截面为圆形、扇形或多边形中的一种或多种的组合。本实施例中的柱状防粘结构沿平行于基底10的固定部11顶面方向的横截面为圆形，使得所述基底10与所述柱状防粘结构之间的接触面积减小，从而进一步降低了所述基底10与所述柱状防粘结构的粘黏力，有效避免了所述振膜20与所述基底10产生粘黏现象，进而提高了所述MEMS麦克风的可靠性。
本申请实施例提供的MEMS麦克风芯片同样适用于具有振膜、基底和背腔结构的MEMS麦克风芯片，如压电式和光学式MEMS麦克风芯片。
以上所述的仅是本申请的实施方式，在此应当指出，对于本领域的普通技术人员来说，在不脱离本申请创造构思的前提下，还可以做出改进，但这些均属于本申请的保护范围。

Claims (6)

  1. 一种MEMS麦克风芯片，所述MEMS麦克风芯片包括具有背腔的基底，设置于所述基底上的振膜，以及相对所述振膜远离所述基底一侧设置的背板；其特征在于，所述振膜包括位于中部的感应区域及环绕所述感应区域并与所述感应区域相间隙设置形成振膜狭缝的非感应区域，所述振膜狭缝沿所述振膜的振动方向的正投影位于所述基底上。
  2. 根据权利要求1所述的MEMS麦克风芯片，其特征在于：所述振膜向靠近所述基底的方向延伸形成与所述基底间隔的防粘结构。
  3. 根据权利要求2所述的MEMS麦克风芯片，其特征在于：所述防粘结构沿所述振膜的振动方向的正投影位于所述基底靠近所述背腔一侧的边缘处。
  4. 根据权利要求2所述的MEMS麦克风芯片，其特征在于：所述防粘结构设置为一排或多排。
  5. 根据权利要求2所述的MEMS麦克风芯片，其特征在于：所述防粘结构为柱状防粘结构或墙体防粘结构中的一种或两种的组合。
  6. 根据权利要求2所述的MEMS麦克风芯片，其特征在于：所述柱状防粘结构的横截面为圆形、扇形或多边形中的一种或多种的组合。
PCT/CN2020/133718 2020-11-17 2020-12-04 Mems麦克风芯片 WO2022104928A1 (zh)

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CN107244646A (zh) * 2017-03-09 2017-10-13 歌尔科技有限公司 一种mems芯片
CN111757223A (zh) * 2020-06-30 2020-10-09 瑞声声学科技(深圳)有限公司 一种mems麦克风芯片
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US20090092273A1 (en) * 2007-10-05 2009-04-09 Silicon Matrix Pte. Ltd. Silicon microphone with enhanced impact proof structure using bonding wires
CN205510403U (zh) * 2016-01-25 2016-08-24 歌尔声学股份有限公司 一种mems麦克风芯片及mems麦克风
CN107244646A (zh) * 2017-03-09 2017-10-13 歌尔科技有限公司 一种mems芯片
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