WO2022104927A1

WO2022104927A1 - Method for manufacturing mems sensor

Info

Publication number: WO2022104927A1
Application number: PCT/CN2020/133717
Authority: WO
Inventors: 柏杨; 张睿
Original assignee: 瑞声声学科技(深圳)有限公司
Priority date: 2020-11-17
Filing date: 2020-12-04
Publication date: 2022-05-27
Also published as: CN112551480A

Abstract

A method for manufacturing a MEMS sensor (100'), comprising: providing a MEMS wafer (200) that is not provided with a back cavity (S11); coating the back surface of the MEMS wafer (200) with an adhesive to form a first adhesive layer (20a), and semi-curing the first adhesive layer (20a) (S12); cutting the MEMS wafer (200) to obtain a plurality of MEMS chips (20) that are not provided with a back cavity (S13); combining with a substrate (11) one surface of the MEMS chip (20) provided with the first adhesive layer (20a), and curing the first adhesive layer (20a), so as to fix the MEMS chip (20) on the substrate (11) (S14); and covering the substrate (11) with a housing (12), the housing (12) and the substrate (11) mutually enclosing to form a packaging cavity (10a), and the MEMS chip (20) being located in the packaging cavity (10a) (S15). There is no need to dispense the adhesive on the substrate (11), thereby reducing adhesive consumption and preventing the adhesive from overflowing around the MEMS chip (20), reducing the thickness of the MEMS chip (20), and improving the performance of the MEMS sensor (100').

Description

How to make a MEMS sensor

technical field

The present application relates to the technical field of MEMS sensors, and in particular, to a manufacturing method of a MEMS sensor.

Background technique

In the package structure of the prior art MEMS sensors (such as MEMS microphones, MEMS ultrasonic transducers, pressure sensors, etc.), please refer to FIG. 3. The packaging cavity 5 is formed by bonding. For some MEMS sensors, there are through holes on the substrate 3 or the housing 4 as a channel for sensing external sound or air pressure. The functions of mobile terminals such as smartphones and tablets are becoming more and more powerful, and the application fields of MEMS sensors are becoming more and more extensive.

In the manufacturing method of the MEMS sensor in the prior art, in the packaging process, the MEMS wafer and the ASIC wafer are first cut into a single MEMS chip 1 and an ASIC chip respectively, and glue 6 is dripped at the corresponding position of the substrate 2, and then Paste the cut MEMS chip 1 and ASIC chip 2 on the substrate 3, and then perform glue curing to complete the entire patch (die). bond) process. The above manufacturing method has the following disadvantages: First, the glue dispensed by the glue dispenser before the Die bond will overflow around the chip, and the overflow part greatly increases the area occupied by the chip and increases the amount of glue dispensed by the dispensing equipment. Control difficulty. For MEMS microphones, the overflowing glue occupies the volume of the back cavity and reduces the signal-to-noise ratio of MEMS microphones; second, Die The bonding process puts forward high requirements for the control of the dispensing position and the dispensing amount of the dispensing equipment. The fluctuation of the dispensing parameters will have an impact on the consistency and yield of the MEMS sensor; third, the die bond to the glue During the curing process, due to the rheological properties of the resin material, the glue can easily overflow to the surface of the chip along the edge or cavity of the chip. For MEMS sensors, the overflowing glue may contaminate the movable parts of the MEMS chip or The bonding area causes the MEMS chip to fail. In order to prevent the glue from overflowing, the MEMS chip usually needs to ensure a certain thickness. For the MEMS microphone, the excessive thickness of the MEMS chip occupies the volume of the back cavity and reduces the signal-to-noise of the MEMS microphone. Compare.

technical problem

The purpose of this application is to provide a manufacturing method of a MEMS sensor, so as to solve the technical problem of poor performance of the MEMS sensor in the prior art due to the difficulty in controlling the amount of glue dispensed and the overflow of the glue to the chip.

technical solutions

The technical solution of the present application is as follows: a manufacturing method of a MEMS sensor is provided, comprising:

S11, provide MEMS wafers without back cavity;

S12, coating glue on the back of the MEMS wafer to form a first glue layer, and semi-curing the first glue layer;

S13, cutting the MEMS wafer to obtain several MEMS chips without back cavity;

S14, combining the side of the MEMS chip with the first glue layer with a substrate and curing the first glue layer to fix the MEMS chip on the substrate;

S15 , connecting a casing cover on the substrate, the casing and the substrate are surrounded to form a package cavity, and the MEMS chip is located in the package cavity.

Preferably, in step S12, the coating of glue on the back of the MEMS wafer to form a first glue layer includes:

The MEMS wafer is rotated while spraying glue in an atomized state over the rotation center of the MEMS wafer to form a first glue layer on the backside of the MEMS wafer.

Preferably, the manufacturing method further includes:

Provide ASIC wafers;

Coating glue on the back of the ASIC wafer to form a second glue layer, and semi-curing the second glue layer;

The ASIC wafer is cut to obtain several ASIC chips;

Step S14 includes:

the side of the MEMS chip with the first glue layer and the side of the ASIC chip with the second glue layer are combined with the substrate;

The first glue layer and the second glue layer are cured to fix the MEMS chip and the ASIC chip on the substrate.

Preferably, in step S14, after the first glue layer and the second glue layer are cured to fix the MEMS chip and the ASIC chip on the substrate, the method further includes:

The MEMS chip and the ASIC chip, the ASIC chip and the substrate are respectively electrically connected by wire bonding.

Preferably, the thicknesses of the first glue layer and the second glue layer are both less than 20 μm.

Another technical solution of the present application is as follows: a manufacturing method of a MEMS sensor is provided, which is characterized in that, comprising:

S21, providing a MEMS wafer with a back cavity;

S22, sticking a dicing film on the back of the MEMS wafer;

S23, coating glue on one side of the MEMS wafer pasted with the dicing film to form a third glue layer, and performing semi-curing treatment on the third glue layer;

S24, etching a communication cavity at a position corresponding to the back cavity of the third glue layer and the dicing film, wherein the communication cavity sequentially penetrates the third glue layer and the dicing film and connects to the back cavity. communicating with the back cavity;

S25, cutting the MEMS wafer to obtain several MEMS chips provided with a back cavity;

S26, combining the side of the MEMS chip with the third glue layer with the substrate and curing the third glue layer to fix the MEMS chip on the substrate;

S27 , connecting the casing cover on the substrate, the casing and the substrate are surrounded to form a package cavity, and the MEMS chip is located in the package cavity.

Preferably, in step S22, the coating of glue on the side of the MEMS wafer on which the dicing film is attached to form a third glue layer, comprising:

The MEMS wafer is rotated while spraying glue in an atomized state over the center of rotation of the MEMS wafer to form a third glue layer on the backside of the MEMS wafer.

Preferably, the manufacturing method further includes:

Provide ASIC wafers;

Apply glue on the back of the ASIC wafer to form a fourth glue layer, and perform semi-curing treatment on the fourth glue layer;

The ASIC wafer is cut to obtain several ASIC chips;

Step S26 includes:

the side of the MEMS chip with the third glue layer and the side of the ASIC chip with the fourth glue layer are combined with the substrate;

The third glue layer and the fourth glue layer are cured to fix the MEMS chip and the ASIC chip on the substrate.

Preferably, in step S26, after the third glue layer and the fourth glue layer are cured to fix the MEMS chip and the ASIC chip on the substrate, the method further includes:

beneficial effect

The beneficial effects of the present application are as follows: in the manufacturing method of the MEMS sensor of the present application, glue is applied to the back of the MEMS wafer to form a glue layer, and the glue layer is semi-cured; There is a semi-cured glue layer on the back of the MEMS chip; then the side of the single MEMS chip with the glue layer is combined with the substrate to cure the glue layer; through the above method, when the MEMS chip is installed on the substrate, it is not necessary to install the MEMS chip on the substrate. The glue dispensing operation reduces the amount of glue and prevents the glue from overflowing around the MEMS chip, which is conducive to reducing the thickness of the MEMS chip and improving the performance of the MEMS sensor.

Description of drawings

1 is a schematic structural diagram of a MEMS sensor in the prior art;

FIG. 2 is a flowchart of a manufacturing method of a MEMS sensor according to a first embodiment of the application;

3 is a schematic diagram of a manufacturing method of a MEMS sensor according to the first embodiment of the application;

4 is a schematic structural diagram of the MEMS sensor prepared in the first embodiment of the application;

5 is a flowchart of a method for manufacturing a MEMS sensor according to a second embodiment of the present application;

6 is a schematic diagram of a manufacturing method of a MEMS sensor according to a second embodiment of the present application;

FIG. 7 is a schematic structural diagram of the MEMS sensor prepared in the second embodiment of the present application.

Embodiments of the present invention

In order to make the objectives, technical solutions and advantages of the present application clearer, the present application will be further described in detail below with reference to the accompanying drawings and specific embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application, but not to limit the present application.

In the following, many aspects of the present application will be better understood with reference to the accompanying drawings. Features in the figures are not necessarily drawn to scale. Instead, emphasis is placed on clearly illustrating components of the present application. Furthermore, like reference numerals indicate corresponding parts throughout the several views of the drawings.

The words "exemplary" or "illustrative" as used herein mean serving as an example, instance, or illustration. Any implementation described herein as "exemplary" or "illustrative" is not necessarily to be construed as preferred or advantageous over other implementations. All embodiments described below are exemplary embodiments provided to enable those skilled in the art to make and use examples of the disclosure and are not intended to limit the scope of the disclosure, which is defined by The claims are limited. In other instances, well-known features and methods have been described in detail so as not to obscure the application. For the purposes of this description, the terms "upper", "lower", "left", "right", "front", "rear", "vertical", "horizontal" and derivatives thereof will be oriented as in FIG. 1 of inventions. Furthermore, there is no intention to be bound by any expressed or implied theory presented in the preceding technical field, background, brief summary or the following detailed description. It should also be appreciated that the specific apparatus and processes illustrated in the drawings and described in the following specification are simple exemplary embodiments of the inventive concepts defined in the appended claims. Therefore, specific dimensions and other physical characteristics related to the embodiments disclosed herein are not to be construed as limiting unless the claims expressly state otherwise.

first embodiment

The first embodiment of the present application provides a method for manufacturing a MEMS sensor. The MEMS sensor includes a MEMS chip without a back cavity. Please refer to FIG. 2 and FIG. 3 . The manufacturing method for the MEMS sensor includes the following steps:

S11, providing a MEMS wafer 200 without a back cavity.

S12, coating the backside of the MEMS wafer 200 with glue to form a first glue layer 20a, and performing semi-curing treatment on the first glue layer 20a.

In this embodiment, the back side of the MEMS wafer 200 is the side of the wafer without devices, and the side of the wafer with devices is the front side of the wafer.

In step S12, the first glue layer 20a is fabricated by spin coating. Specifically, the MEMS wafer 200 is fixed on the suction cup with its back facing upward, and the MEMS wafer 200 is rotated at a certain speed, while the The glue in the atomized state is sprayed above the rotation center of the MEMS wafer 200. During the rotation of the MEMS wafer 200, the glue sprayed on the back of the MEMS wafer 200 moves to the MEMS wafer along the radial direction of the MEMS wafer 200. At the edge position of the MEMS wafer 200 , a first glue layer 20 a is formed on the backside of the MEMS wafer 200 .

In step S12, compared with the glue layer formed by dispensing, the first glue layer 20a coated on the back of the MEMS wafer 200 is a thin glue layer, and its thickness can be controlled by the amount of sprayed glue. In an embodiment, the thickness of the first glue layer 20a is less than 20 μm. Since the first glue layer 20a is thin and semi-cured, in the subsequent Die During the bonding process, the first glue layer will not overflow.

In step S12, ultraviolet light (UV) is used to irradiate the backside of the MEMS wafer 200, and the first glue layer 20a is semi-cured, so that the MEMS wafer 200 and the first glue layer 20a form a whole.

S13, cutting the MEMS wafer 200 to obtain a plurality of MEMS chips 20 without a back cavity.

In step S13, the MEMS wafer 200 is cut, so that the MEMS wafer 200 together with the first glue layer 20a on the backside is cut into a single MEMS chip 20, and the backside of the obtained single MEMS chip 20 is provided with a semi-cured first glue layer 20a. A glue layer 20a.

S14 , the side of the MEMS chip 20 with the first glue layer 20 a is combined with the substrate 11 and the first glue layer 20 a is cured to fix the MEMS chip 20 on the substrate 11 .

In step S14, when the MEMS chip 20 is mounted on the substrate 11, the first glue layer 20a in the semi-cured state on the back of the MEMS chip 20 is in contact with the substrate 11. Since the semi-cured first glue layer 20a replaces the glue, it is The glue is dispensed, and then the semi-cured first glue layer 20 a is cured, the MEMS chip 20 is fixed on the substrate 11 , and the entire die bond process is completed.

S15, cover the casing 12 on the substrate 11, the casing 12 and the substrate 11 are surrounded to form a package cavity 10a, and the MEMS chip 20 is located in the package cavity 10a.

In this embodiment, glue is applied to the back of the MEMS wafer to form a glue layer, and the glue layer is semi-cured; then the MEMS wafer is cut, and a single MEMS chip obtained by cutting is provided with a semi-cured glue layer on the back; The side of the single MEMS chip with the glue layer is combined with the substrate, and the glue layer is cured. Therefore, when the MEMS chip is installed on the substrate, there is no need to perform a glue dispensing operation on the substrate, which reduces the amount of glue and avoids the glue overflowing around the MEMS chip, which is beneficial to reduce the thickness of the MEMS chip. The occupation of the volume of the back cavity by the MEMS chip is beneficial to improve the performance of the MEMS sensor.

Further, the manufacturing method of the MEMS sensor also includes the step of installing an ASIC chip on the substrate. For the ASIC chip, the glue dispensing method in the prior art can be used to fix the ASIC chip and the substrate; A similar fixing method for MEMS chips without a back cavity.

When the ASIC chip adopts a fixing method similar to the above-mentioned MEMS chip without a back cavity, the manufacturing method of the MEMS sensor of this embodiment further includes the following steps after step S13 and before step S14:

S13', providing an ASIC wafer; coating the back of the ASIC wafer with glue to form a second glue layer, and performing semi-curing treatment on the second glue layer; cutting the ASIC wafer to obtain several ASICs chip 30.

In step S13', the back side of the ASIC wafer is the side of the wafer without devices, and the side of the wafer with devices is the front side of the wafer. The second glue layer is made by spin coating. Specifically, the backside of the ASIC wafer is fixed on the suction cup, and the ASIC wafer is rotated at a certain speed, while at the rotation center of the ASIC wafer The glue in the atomized state is sprayed above. During the rotation of the ASIC wafer, the glue sprayed to the back of the ASIC wafer moves along the radial direction of the ASIC wafer to the edge of the ASIC wafer, and the backside of the ASIC wafer moves to the edge of the ASIC wafer. Form a second glue layer. Compared with the glue layer formed by dispensing, the second glue layer coated on the back of the ASIC wafer is a thin glue layer, and its thickness can be controlled by the amount of sprayed glue. In an optional embodiment, the second glue layer is The thickness of the layer is less than 20 μm. Because the second glue layer is thin and semi-cured, in the subsequent Die During the bonding process, the second glue layer will not overflow. Ultraviolet light (UV) is used to irradiate the back of the ASIC wafer, and the second glue layer is semi-cured, so that the ASIC wafer and the second glue layer form a whole. The ASIC wafer is diced so that the ASIC wafer together with the second glue layer on the backside is cut into a single ASIC chip 30 , and the backside of the obtained single ASIC chip 30 is provided with a second glue layer 30a in a semi-cured state.

Therefore, step S14 specifically includes:

S141, the side of the MEMS chip 20 with the first glue layer 20a and the side of the ASIC chip 30 with the second glue layer 30a are combined with the substrate;

S142, curing the first glue layer 20a and the second glue layer 30a to fix the MEMS chip 20 and the ASIC chip 30 on the substrate 11;

S143 , the MEMS chip 20 and the ASIC chip 30 , the ASIC chip 30 and the substrate 11 are respectively bonded and electrically connected by metal wires 40 .

Please refer to FIG. 3 for the structure of the MEMS sensor obtained by the manufacturing method of this embodiment. The MEMS sensor 100 includes a housing 10 having a packaging cavity 10a and a MEMS chip 20 installed in the packaging cavity 10a and the ASIC chip 30, wherein the MEMS chip 20 is not provided with a back cavity, the housing 10 includes a substrate 11 for mounting the MEMS chip 20 and the ASIC chip 30, and the substrate 11 is surrounded by the substrate 11 to form the The casing 12 of the packaging cavity 10a, the MEMS chip 20 is fixed on the substrate 11 by the first glue layer 20a, the ASIC chip 30 is fixed on the substrate 11 by the second glue layer 30a, the MEMS chip Metal wires 40 are respectively connected between the ASIC chip 20 and the ASIC chip 30 and between the ASIC chip 30 and the substrate 11 .

Second Embodiment

The second embodiment of the present application provides a method for fabricating a MEMS sensor. The MEMS sensor includes a MEMS chip with a back cavity. Please refer to FIG. 5 and FIG. 6 . The fabrication method for the MEMS sensor includes the following steps:

S21, providing a MEMS wafer 500 with a back cavity.

S22 , pasting a dicing film 501 on the backside of the MEMS wafer 500 .

In step S22, the back side of the MEMS wafer 500 is the side of the wafer without devices, the side of the wafer with devices is the front side of the wafer, and the back cavity 503 of the MEMS wafer 500 is located on the back side. Since the MEMS wafer 500 of the present embodiment is provided with a back cavity 503, directly applying glue on the back of the wafer will cause the glue to enter the back cavity, so a layer of dicing film 501 is pasted before applying the glue.

S23 , coating glue on the side of the MEMS wafer 500 affixed to the dicing film 501 to form a third glue layer 502 , and performing a semi-curing process on the third glue layer 502 .

In step S23, the third glue layer 502 is fabricated by spin coating. Specifically, the MEMS wafer 500 is fixed on the suction cup with its back facing upward, and the MEMS wafer 500 is rotated at a certain speed, while the The glue in the atomized state is sprayed above the rotation center of the MEMS wafer 500 . During the rotation of the MEMS wafer 500 , the glue sprayed on the dicing film 501 on the back of the MEMS wafer 500 moves along the radial direction of the MEMS wafer 500 To the edge of the MEMS wafer 500 , a third glue layer 502 is formed on the backside of the MEMS wafer 500 .

In step S23, compared with the glue layer formed by dispensing, the third glue layer 502 coated on the back of the MEMS wafer 500 is a thin glue layer, and its thickness can be controlled by the amount of the glue sprayed. In an embodiment, the thickness of the third glue layer 502 is less than 20 μm. Since the third glue layer 502 is thin and semi-cured, in the subsequent Die During the bonding process, the third glue layer 502 will not overflow.

In step S23 , the backside of the MEMS wafer 500 is irradiated with ultraviolet light (UV), and the third glue layer 502 is semi-cured, so that the MEMS wafer 500 and the third glue layer 502 form a whole.

S24 , etching the communication cavity 504 at the position of the third glue layer 502 and the dicing film 501 corresponding to the back cavity 503 , wherein the communication cavity 504 runs through the third glue layer 502 and the back cavity 503 in sequence. The dicing film 501 is in communication with the back cavity 503 .

In step S24, the third glue layer 502 and the dicing film 501 on the positions corresponding to the back cavity 503 of the MEMS wafer 500 are removed by etching.

S25 , cutting the MEMS wafer 500 to obtain a plurality of MEMS chips 50 with back cavities 503 .

In step S25, the MEMS wafer 500 is cut, so that the MEMS wafer 500 together with the third glue layer 502 on the backside is cut into a single MEMS chip 50, and the backside of the obtained single MEMS chip 50 is provided with a semi-cured first MEMS chip 50. Three glue layers 502 , and a back cavity 503 is provided on the back of the obtained single MEMS chip 50 . In this embodiment, the MEMS chip 500 provided with the back cavity 503 may be a MEMS microphone chip.

S26 , the side of the MEMS chip 50 with the third glue layer 502 is combined with the substrate 11 and the third glue layer 502 is cured to fix the MEMS chip 50 on the substrate 11 .

In step S26 , when the MEMS chip 50 is mounted on the substrate 11 , the third glue layer 502 in the semi-cured state on the back of the MEMS chip 50 is in contact with the substrate 11 . The glue is dispensed on 11 , and then, the third glue layer 502 in the semi-cured state is cured, the MEMS chip 50 is fixed on the substrate 11 , and the entire die bond process is completed.

S27, cover the casing 12 on the substrate 11, the casing 12 and the substrate 11 are surrounded to form a package cavity 10a, and the MEMS chip 50 is located in the package cavity 10a.

In this embodiment, glue is applied to the back of the MEMS wafer to form a glue layer, and the glue layer is semi-cured; then the MEMS wafer is cut, and a single MEMS chip obtained by cutting is provided with a semi-cured glue layer on the back; The side of the single MEMS chip with the glue layer is combined with the substrate, and the glue layer is cured. Therefore, when the MEMS chip is installed on the substrate, there is no need to perform a glue dispensing operation on the substrate, which reduces the amount of glue and avoids the glue overflowing around the MEMS chip, which is beneficial to reduce the thickness of the MEMS chip. The occupation of the volume of the back cavity by the MEMS chip is beneficial to improve the performance of the MEMS sensor. The difference between this embodiment and the first embodiment is that in this embodiment, the MEMS wafer is provided with a back cavity, so a layer of dicing film needs to be pasted before gluing, and after gluing the corresponding position of the back cavity is removed. Dicing film and third glue layer.

Further, the manufacturing method of the MEMS sensor also includes the step of installing an ASIC chip on the substrate. For the ASIC chip, the glue dispensing method in the prior art can be used to fix the ASIC chip and the substrate; In one embodiment, a MEMS chip without a back cavity is fixed in a similar manner.

When the ASIC chip adopts a fixing method similar to the above-mentioned MEMS chip without a back cavity, the manufacturing method of the MEMS sensor in this embodiment further includes the following steps after step S25 and before step S26:

S25', providing an ASIC wafer; coating the back of the ASIC wafer with glue to form a fourth glue layer, and performing semi-curing treatment on the fourth glue layer; cutting the ASIC wafer to obtain several ASICs chip 30.

In step S25', the back side of the ASIC wafer is the side of the wafer without devices, and the side of the wafer with devices is the front side of the wafer. The fourth glue layer is made by spin coating, specifically, the ASIC wafer is fixed on the suction cup with the back side facing upward, and the ASIC wafer is rotated at a certain speed, while at the rotation center of the ASIC wafer The glue in the atomized state is sprayed above. During the rotation of the ASIC wafer, the glue sprayed to the back of the ASIC wafer moves along the radial direction of the ASIC wafer to the edge of the ASIC wafer, and the backside of the ASIC wafer moves to the edge of the ASIC wafer. A fourth glue layer is formed. Compared with the glue layer formed by dispensing, the fourth glue layer coated on the back of the ASIC wafer is a thin glue layer, and its thickness can be controlled by the amount of sprayed glue. In an optional embodiment, the fourth glue layer is The thickness of the layer is less than 20 μm. Since the fourth glue layer is thin and semi-cured, in the subsequent Die During the bonding process, the fourth glue layer will not overflow. Ultraviolet light (UV) is used to irradiate the back of the ASIC wafer, and the fourth glue layer is semi-cured, so that the ASIC wafer and the fourth glue layer form a whole. The ASIC wafer is diced so that the ASIC wafer and the fourth glue layer on the back are cut into a single ASIC chip 30 , and the back of the obtained single ASIC chip 30 is provided with a semi-cured fourth glue layer 60 a .

Therefore, step S26 specifically includes:

S261, the side of the MEMS chip 50 with the third glue layer 502 and the side of the ASIC chip 30 with the fourth glue layer 60a are combined with the substrate 11;

S262, curing the third glue layer 502 and the fourth glue layer 60a to fix the MEMS chip 50 and the ASIC chip 30 on the substrate 11;

S263 , the MEMS chip 50 and the ASIC chip 30 , the ASIC chip 30 and the substrate 11 are electrically connected by metal wires 40 , respectively.

Please refer to FIG. 7 for the structure of the MEMS sensor obtained by the manufacturing method of this embodiment. The MEMS sensor 100 ′ includes a housing 10 having a packaging cavity 10 a and a MEMS chip installed in the packaging cavity 10 a 50 and the ASIC chip 30, wherein the MEMS chip 50 is provided with a back cavity, the housing 10 includes a substrate 11 for mounting the MEMS chip 50 and the ASIC chip 30, and the substrate 11 is surrounded by the substrate 11 to form the The casing 12 of the packaging cavity 10a, the MEMS chip 50 is fixed on the substrate 11 through the third glue layer 502, and a dicing film 501 is provided between the MEMS chip 50 and the third glue layer 502, so The ASIC chip 30 is fixed on the substrate 11 through the fourth glue layer 60a, and metal wires 40 are respectively connected between the MEMS chip 50 and the ASIC chip 30 and between the ASIC chip 30 and the substrate 11. .

The above are only the embodiments of the present application. It should be pointed out that for those of ordinary skill in the art, improvements can be made without departing from the creative concept of the present application, but these belong to the present application. scope of protection

Claims

1. A method of making a MEMS sensor, comprising:

S11, provide MEMS wafers without back cavity;

S13, cutting the MEMS wafer to obtain several MEMS chips without back cavity;

2. The method for manufacturing a MEMS sensor according to claim 1, wherein in step S12, coating the backside of the MEMS wafer with glue to form a first glue layer comprises:

3. The manufacturing method of the MEMS sensor according to claim 1, wherein the manufacturing method further comprises:

Provide ASIC wafers;

The ASIC wafer is cut to obtain several ASIC chips;

Step S14 includes:

4. The method for manufacturing a MEMS sensor according to claim 3, wherein in step S14, the first glue layer and the second glue layer are cured to form the MEMS chip. And after the ASIC chip is fixed on the substrate, it also includes:

5. The manufacturing method of the MEMS sensor according to claim 3, wherein the thicknesses of the first glue layer and the second glue layer are both less than 20 μm.

6. A method for manufacturing a MEMS sensor, comprising:

S21, providing a MEMS wafer with a back cavity;

S22, sticking a dicing film on the back of the MEMS wafer;

S23, coating glue on the side of the MEMS wafer pasted with the dicing film to form a third glue layer, and performing semi-curing treatment on the third glue layer;

S24, etching a communication cavity at a position of the third glue layer and the dicing film corresponding to the back cavity, wherein the communication cavity sequentially penetrates the third glue layer and the dicing film and connects to the back cavity. communicating with the back cavity;

7. The method for manufacturing a MEMS sensor according to claim 6, wherein in step S22, the dicing film is coated with glue on the side of the MEMS wafer to form a third glue layer ,include:

8. The manufacturing method of the MEMS sensor according to claim 6, wherein the manufacturing method further comprises:

Provide ASIC wafers;

The ASIC wafer is cut to obtain several ASIC chips;

Step S26 includes:

9. The method for manufacturing a MEMS sensor according to claim 8, wherein in step S26, the third glue layer and the fourth glue layer are cured to form the MEMS chip. And after the ASIC chip is fixed on the substrate, it also includes:

10. The method for manufacturing a MEMS sensor according to claim 8, wherein the thicknesses of the first glue layer and the second glue layer are both less than 20 μm.