WO2022104805A1 - Test structure and test method - Google Patents

Test structure and test method Download PDF

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WO2022104805A1
WO2022104805A1 PCT/CN2020/130937 CN2020130937W WO2022104805A1 WO 2022104805 A1 WO2022104805 A1 WO 2022104805A1 CN 2020130937 W CN2020130937 W CN 2020130937W WO 2022104805 A1 WO2022104805 A1 WO 2022104805A1
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resistor
resistance
test structure
resistors
test
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PCT/CN2020/130937
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French (fr)
Chinese (zh)
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廖昱程
邱青松
张明丰
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江苏时代全芯存储科技股份有限公司
江苏时代芯存半导体有限公司
塞席尔商使命科技控股有限公司
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Priority to PCT/CN2020/130937 priority Critical patent/WO2022104805A1/en
Priority to CN202080099894.8A priority patent/CN115485833A/en
Publication of WO2022104805A1 publication Critical patent/WO2022104805A1/en

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R27/00—Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R27/00—Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
    • G01R27/02—Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
    • G01R27/08—Measuring resistance by measuring both voltage and current
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching

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  • the present invention relates to the field of semiconductor testing, in particular to a testing structure and a testing method.
  • FIG. 1 shows the arrangement between the two heaters and the phase change material layer in the prior art.
  • the technical problem to be solved by the present invention is to provide a test structure and a test method, which can accurately measure the resistance value of the resistor formed by the heater and the phase change material layer.
  • the present invention provides a test structure, comprising: a first resistor; and at least one second resistor electrically connected in series with the first resistor, the number of the second resistors is M ⁇ N, the M and N are positive integers, and all of the second resistors are electrically connected in parallel with each other.
  • the present invention provides a test method, which includes the following steps: setting a first test structure, the first test structure includes a first resistor, and at least one second resistor electrically connected in series with the first resistor , the number of the second resistors is 1 ⁇ 1, and all the second resistors are electrically connected in parallel with each other; a second test structure is provided, the second test structure includes a first resistor, and is electrically connected to the first resistor Connect at least one second resistor in series, and the number of the second resistors is 2 ⁇ 2; measure the resistance values of the first test structure and the second test structure, and calculate the difference; The resistance value of the second resistor is calculated based on the difference of the resistance values of the second resistor; the resistance value of the first resistor is calculated according to the obtained resistance value of the second resistor and combined with the resistance value of the first test structure or the second test structure.
  • the present invention obtains the resistance difference by setting different numbers of resistances, thereby accurately calculating the resistance values of the phase change material and the heater.
  • FIG. 1 shows the arrangement between the two heaters and the phase change material layer in the prior art.
  • FIG. 2 is a schematic diagram of a test structure according to a specific embodiment of the present invention.
  • FIG. 3 is a schematic diagram of a test structure according to a specific embodiment of the present invention.
  • FIG. 4 is a schematic diagram of a test structure according to a specific embodiment of the present invention.
  • FIG. 5 is a schematic diagram of the implementation steps of the testing method according to a specific embodiment of the present invention.
  • FIG. 6 is a schematic diagram of a specific implementation manner of applying current to the resistance test of the first test structure and the second test structure using the method shown in FIG. 5 .
  • FIG. 2 is a schematic structural diagram of another specific embodiment of the test structure of the present invention, which includes: a first resistor 21 and at least one second resistor 22 electrically connected in series with the first resistor.
  • the number of the second resistors is M ⁇ N, and the M and N are positive integers.
  • FIG 3 is a schematic structural diagram of another specific embodiment of the test structure of the present invention, which includes: a first resistor 21 and at least one second resistor 22 electrically connected in series with the first resistor.
  • the number of the second resistors is M ⁇ N, and the M and N are positive integers.
  • the above structure is used to test the resistance value R GST of the first resistor 21 and the resistance value R ch of the second resistor 22 . Since the number of the second resistors 22 used in the above-mentioned test structures is different, any two test structures in the above-mentioned specific embodiments are used to measure the total series resistances Rth 1 and R th2 of the above-mentioned structures, respectively.
  • Rth 1 is the total series resistance of the test structure in FIG. 2
  • Rth 1 R ch +R GST +R PAS
  • R PAS is the sum of electrode resistance and background parasitic resistance.
  • R th3 is the total series resistance of the test structure in FIG. 3
  • Rth 2 R ch /2+R GST +R PAS .
  • R th1 -R th2 is regarded as the resistance change caused by the change of the number of the second resistors 22 , and the resistance value R ch of the second resistor 22 can be calculated.
  • FIG. 4 is a schematic diagram of the structure of this specific embodiment, including: a first resistor 21 and at least one second resistor 22 electrically connected in series with the first resistor.
  • the test structure is used to test the variable resistance structure of the phase change memory
  • the first resistance is a phase change material layer, such as GST material
  • the second resistance is a heater.
  • the number of the second resistors is M ⁇ N, and M and N are positive integers. All the second resistors are electrically connected in parallel with each other, and are preferably arranged in an array with equal spacing in M rows and N columns.
  • M being equal to N is that all the second resistors 22 can be placed in the same electrical environment, thereby reducing the systematic error between the resistors due to process and electric field distribution.
  • the second resistor 22 is disposed in an insulating dielectric layer 23 , the distance between the second resistor 22 and the boundary of the insulating dielectric layer 13 is d, and the distance between the second resistor 22 and the boundary of the insulating dielectric layer 13 is d. The distance between them is 2d. This can ensure that the electrical environment of each resistor is consistent, and reduce the systematic error between the resistors due to process and electric field distribution.
  • FIG. 5 is a schematic diagram of the implementation steps of the method according to this specific embodiment, including: step S51, setting a first test structure, the first test structure includes a first resistor, and a first resistor is electrically connected in series.
  • At least one second resistor the number of the second resistors is M1 ⁇ N1, the M1 and N1 are positive integers, and all the second resistors are electrically connected in parallel with each other; step S52, set up a second test structure, all The second test structure includes a first resistor, and at least one second resistor electrically connected in series with the first resistor, the number of the second resistors is M2 ⁇ N2, the M2 and N2 are positive integers, and all the The second resistors are electrically connected in parallel with each other, and the value of M1 ⁇ N1 is not equal to the value of M2 ⁇ N2; step S53, measure the resistance values of the first test structure and the second test structure, and calculate the difference Step S54, according to the difference of the calculated resistance value, in conjunction with the difference of the value of M1 ⁇ N1 and the value of M2 ⁇ N2, calculate the resistance value of the second resistance; Step S55, according to the obtained resistance of the second resistance The resistance value of the first resistor is calculated in combination with the resistance
  • the current flow direction is set to One resistance flows to the second resistance, and from the second resistance to the first resistance, the resistance values in the above two cases are respectively tested, and the average value is taken as the resistance of the first test structure. This counteracts systematic errors due to process and electric field distribution in the resistor's environment.
  • a first test structure is set up, the first test structure includes a first resistor, and at least one second resistor electrically connected in series with the first resistor, and the number of the second resistors is M1 ⁇ N1 , the M1 and N1 are positive integers, all the second resistors are electrically connected in parallel with each other, and are arranged in an equidistant array in the form of M1 rows and N1 columns;
  • a second test structure is set up, and the second test structure Including a first resistor, and at least one second resistor electrically connected in series with the first resistor, the number of the second resistors is M2 ⁇ N2, the M2 and N2 are positive integers, and all the second resistors are mutually They are electrically connected in parallel and arranged in an array with equal spacing in the form of M1 rows and N1 columns, and the value of M1 ⁇ N1 is not equal to the value of M2 ⁇ N2.
  • This step may adopt any two of the specific implementation manners of the

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  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Engineering & Computer Science (AREA)
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  • Microelectronics & Electronic Packaging (AREA)
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Abstract

A test structure and a test method. The test structure comprises: a first resistor (21); and at least one second resistor (22) electrically connected in series with the first resistor (21), the number of the second resistors (22) being M×N, M and N being positive integers, and all the second resistors (22) being electrically connected in parallel with each other. A resistance difference value is obtained by providing different numbers of resistors, thereby accurately calculating the resistance values of a phase change material and a heater.

Description

测试结构以及测试方法Test structure and test method 技术领域technical field
本发明涉及半导体测试领域，尤其涉及一种测试结构以及测试方法。The present invention relates to the field of semiconductor testing, in particular to a testing structure and a testing method.
背景技术Background technique
相变存储器是采用相变材料层和对应的加热器串联来构成一个可变电阻来作为存储介质。因此，如何准确测量加热器与相变材料层所构成电阻的阻值，是一个重要的技术问题。附图1所示是现有技术中两种加热器与相变材料层之间的排布方式。实测电阻值R th等于加热器11a(11b)的电阻值R ch与相变材料层12a(12b)的电阻值R GST之和，即R th＝R ch+R GST。对于加热器尺寸较小的情况，即附图1(a)所示的情况，我们认为加热器电阻值R ch远大于相变材料层的电阻值R GST，因此可以将实测电阻值R th直接等效为加热器电阻值R ch。对于加热器尺寸较大的情况，即附图1(b)所示的情况，由于加热器是金属材料，其电阻率远小于相变材料，因此在相同的尺寸下，我们认为加热器电阻值R ch远小于相变材料层的电阻值R GST，因此可以将实测电阻值R th直接等效为相变材料层的电阻值R GST。显然，上述算法都做了等效近似，因此不能够准确测出二者的电阻值。 The phase change memory uses a phase change material layer and a corresponding heater in series to form a variable resistor as a storage medium. Therefore, how to accurately measure the resistance value of the resistor formed by the heater and the phase change material layer is an important technical problem. FIG. 1 shows the arrangement between the two heaters and the phase change material layer in the prior art. The measured resistance value R th is equal to the sum of the resistance value R ch of the heater 11a ( 11 b ) and the resistance value R GST of the phase change material layer 12 a ( 12 b ), ie R th =R ch +R GST . For the smaller size of the heater, that is, as shown in Fig. 1(a), we believe that the resistance value R ch of the heater is much larger than the resistance value R GST of the phase change material layer, so the measured resistance value R th can be directly Equivalent to the heater resistance value R ch . For the larger size of the heater, that is, the case shown in Figure 1(b), since the heater is a metal material, its resistivity is much smaller than that of the phase change material. Therefore, under the same size, we consider the heater resistance value R ch is much smaller than the resistance value R GST of the phase change material layer, so the measured resistance value R th can be directly equivalent to the resistance value R GST of the phase change material layer. Obviously, the above algorithms have made equivalent approximations, so the resistance values of the two cannot be accurately measured.
发明内容SUMMARY OF THE INVENTION
本发明所要解决的技术问题是，提供一种测试结构以及测试方法，能够精确测出加热器与相变材料层所构成电阻的阻值。The technical problem to be solved by the present invention is to provide a test structure and a test method, which can accurately measure the resistance value of the resistor formed by the heater and the phase change material layer.
为了解决上述问题，本发明提供了一种测试结构，包括：一第一电阻；以及与第一电阻电学串联的至少一第二电阻，所述第二电阻的数目为M×N个，所述M和N为正整数，所有的所述第二电阻彼此电学并联。In order to solve the above problems, the present invention provides a test structure, comprising: a first resistor; and at least one second resistor electrically connected in series with the first resistor, the number of the second resistors is M×N, the M and N are positive integers, and all of the second resistors are electrically connected in parallel with each other.
为了解决上述问题，本发明提供了一种测试方法，包括如下步骤：设置一第一测试结构，所述第一测试结构包括一第一电阻，以及与第一电阻电学串联的至少一第二电阻，所述第二电阻的数目为1×1个，所有的所述第二电阻彼此电学并联；设置一第二测试结构，所述第二测试结构包括一第一电阻，以及与第一电阻电学串联的至少一第二电阻，所述第二电阻的数目为2×2个；测量所述第一测试结构与所述第二测试结构的电阻值，并计算其差值；根据所计 算的出的电阻值的差，计算出第二电阻的阻值；根据获得的第二电阻的阻值，结合第一测试结构或第二测试结构的阻值，计算出第一电阻的阻值。In order to solve the above problems, the present invention provides a test method, which includes the following steps: setting a first test structure, the first test structure includes a first resistor, and at least one second resistor electrically connected in series with the first resistor , the number of the second resistors is 1×1, and all the second resistors are electrically connected in parallel with each other; a second test structure is provided, the second test structure includes a first resistor, and is electrically connected to the first resistor Connect at least one second resistor in series, and the number of the second resistors is 2×2; measure the resistance values of the first test structure and the second test structure, and calculate the difference; The resistance value of the second resistor is calculated based on the difference of the resistance values of the second resistor; the resistance value of the first resistor is calculated according to the obtained resistance value of the second resistor and combined with the resistance value of the first test structure or the second test structure.
本发明通过设置不同数目的电阻来获得电阻差值，从而精确计算出相变材料和加热器的电阻值。The present invention obtains the resistance difference by setting different numbers of resistances, thereby accurately calculating the resistance values of the phase change material and the heater.
附图说明Description of drawings
附图1所示是现有技术中两种加热器与相变材料层之间的排布方式。FIG. 1 shows the arrangement between the two heaters and the phase change material layer in the prior art.
附图2所示是本发明一具体实施方式所述测试结构示意图。FIG. 2 is a schematic diagram of a test structure according to a specific embodiment of the present invention.
附图3所示是本发明一具体实施方式所述测试结构示意图。FIG. 3 is a schematic diagram of a test structure according to a specific embodiment of the present invention.
附图4所示是本发明一具体实施方式所述测试结构示意图。FIG. 4 is a schematic diagram of a test structure according to a specific embodiment of the present invention.
附图5所示是本发明一具体实施方式所述测试方法的实施步骤示意图。FIG. 5 is a schematic diagram of the implementation steps of the testing method according to a specific embodiment of the present invention.
附图6所示是采用附图5所示方法对第一测试结构和第二测试结构进行电阻测试的施加电流的具体实方式的示意图。FIG. 6 is a schematic diagram of a specific implementation manner of applying current to the resistance test of the first test structure and the second test structure using the method shown in FIG. 5 .
具体实施方式Detailed ways
以下结合附图对本发明提供的测试结构以及测试方法的具体实施方式做详细说明。The specific embodiments of the test structure and the test method provided by the present invention will be described in detail below with reference to the accompanying drawings.
以下结合附图给出本发明所述测试结构的具体实施方式。Specific embodiments of the test structure of the present invention are given below in conjunction with the accompanying drawings.
附图2所示是本发明所述测试结构的又一具体实施方式所述结构示意图，包括：一第一电阻21，以及与第一电阻电学串联的至少一第二电阻22。所述第二电阻的数目为M×N个，所述M和N为正整数。本具体实施方式以M＝N＝1的设置方式，即1个电阻。FIG. 2 is a schematic structural diagram of another specific embodiment of the test structure of the present invention, which includes: a first resistor 21 and at least one second resistor 22 electrically connected in series with the first resistor. The number of the second resistors is M×N, and the M and N are positive integers. In this specific embodiment, the setting mode of M=N=1 is adopted, that is, there is one resistor.
附图3所示是本发明所述测试结构的又一具体实施方式所述结构示意图，包括：一第一电阻21，以及与第一电阻电学串联的至少一第二电阻22。所述第二电阻的数目为M×N个，所述M和N为正整数。本具体实施方式以M＝2，N＝1的设置方式设置2×1个电阻，即2个电阻。3 is a schematic structural diagram of another specific embodiment of the test structure of the present invention, which includes: a first resistor 21 and at least one second resistor 22 electrically connected in series with the first resistor. The number of the second resistors is M×N, and the M and N are positive integers. In this specific embodiment, 2×1 resistors, that is, 2 resistors, are set in a setting manner of M=2 and N=1.
根据上述具体实施方式所体现的内容，在其他的具体实施方式中，还可以通过设置不同数目的M和N来获得不同排列形式的第二电阻22。According to the content embodied in the above-mentioned specific embodiments, in other specific embodiments, different arrangements of the second resistors 22 can also be obtained by setting different numbers of M and N.
上述结构用于测试所述第一电阻21的阻值R GST和所述第二电阻22的阻值R ch。由于上述的测试结构所采用的第二电阻22的数目不同，因此采用上述具体实施方式中的任意两个测试结构，分别测量上述结构的串联总电阻Rth 1 和R th2。Rth 1为附图2测试结构的串联总电阻，Rth 1＝R ch+R GST+R PAS,R PAS为电极电阻与背景寄生电阻总和。R th3为附图3测试结构的串联总电阻，Rth 2＝R ch/2+R GST+R PAS。那么R th1-R th2的值即认为是第二电阻22数目改变而导致的电阻变化，可以计算出第二电阻22的阻值R ch。根据Rth 1-Rth 2＝R ch/2，可去除电极电阻与背景寄生电阻R PAS精确算出第二电阻22的阻值R ch。 The above structure is used to test the resistance value R GST of the first resistor 21 and the resistance value R ch of the second resistor 22 . Since the number of the second resistors 22 used in the above-mentioned test structures is different, any two test structures in the above-mentioned specific embodiments are used to measure the total series resistances Rth 1 and R th2 of the above-mentioned structures, respectively. Rth 1 is the total series resistance of the test structure in FIG. 2 , Rth 1 =R ch +R GST +R PAS , and R PAS is the sum of electrode resistance and background parasitic resistance. R th3 is the total series resistance of the test structure in FIG. 3 , Rth 2 =R ch /2+R GST +R PAS . Then the value of R th1 -R th2 is regarded as the resistance change caused by the change of the number of the second resistors 22 , and the resistance value R ch of the second resistor 22 can be calculated. According to Rth 1 −Rth 2 =R ch /2, the resistance value R ch of the second resistor 22 can be accurately calculated by removing the electrode resistance and the background parasitic resistance R PAS .
附图4所示是本具体实施方式所述结构示意图，包括：一第一电阻21，以及与第一电阻电学串联的至少一第二电阻22。在本具体实施方式中，所述测试结构用于测试相变存储器的可变电阻结构，所述第一电阻为相变材料层，例如可以是GST材料，所述第二电阻为加热器。所述第二电阻的数目为M×N个，所述M和N为正整数，所有的所述第二电阻彼此电学并联，并优选以M行和N列的方式等间距阵列排布。本具体实施方式以M＝N＝2的设置方式来设置2×2个电阻，即4个电阻为例进行叙述。本具体实施方式测试结构的串联总电阻，Rth 3＝R ch/4+R GST+R PAS。M等于N的优点在于可以使所有的第二电阻22均处于相同的电学环境中，降低电阻彼此之间由于工艺和电场分布造成的系统误差。 FIG. 4 is a schematic diagram of the structure of this specific embodiment, including: a first resistor 21 and at least one second resistor 22 electrically connected in series with the first resistor. In this specific implementation manner, the test structure is used to test the variable resistance structure of the phase change memory, the first resistance is a phase change material layer, such as GST material, and the second resistance is a heater. The number of the second resistors is M×N, and M and N are positive integers. All the second resistors are electrically connected in parallel with each other, and are preferably arranged in an array with equal spacing in M rows and N columns. This specific embodiment is described by taking the setting manner of M=N=2 to set 2×2 resistors, that is, 4 resistors as an example. This embodiment tests the total series resistance of the structure, Rth 3 =R ch /4+R GST +R PAS . The advantage of M being equal to N is that all the second resistors 22 can be placed in the same electrical environment, thereby reducing the systematic error between the resistors due to process and electric field distribution.
在本具体实施方式中，所述第二电阻22设置于一绝缘介质层23中，所述第二电阻22与所述绝缘介质层13的边界的距离为d，所述第二电阻22彼此之间距离是2d。这可以保证每个电阻所处的电学环境是一致的，降低电阻彼此之间由于工艺和电场分布造成的系统误差。In this embodiment, the second resistor 22 is disposed in an insulating dielectric layer 23 , the distance between the second resistor 22 and the boundary of the insulating dielectric layer 13 is d, and the distance between the second resistor 22 and the boundary of the insulating dielectric layer 13 is d. The distance between them is 2d. This can ensure that the electrical environment of each resistor is consistent, and reduce the systematic error between the resistors due to process and electric field distribution.
将附图3实施例所量测的测试结构的串联总电阻Rth 2与附图4实施例所量测的测试结构的串联总电阻Rth 3相减，可得Rth 2-Rth 3＝R ch/4。如此可以经由不同测试结构交互验证R ch的正确性与其受电流密度影响其值的关系。 Subtracting the total series resistance Rth 2 of the test structure measured in the embodiment of FIG. 3 and the total series resistance Rth 3 of the test structure measured in the embodiment of FIG. 4 can obtain Rth 2 -Rth 3 =R ch / 4. In this way, the correctness of R ch and its value affected by the current density can be verified interactively through different test structures.
以下结合附图给出本发明所述测试方法的具体实施方式。附图5所示是本具体实施方式所述方法的实施步骤示意图，包括：步骤S51，设置一第一测试结构，所述第一测试结构包括一第一电阻，以及与第一电阻电学串联的至少一第二电阻，所述第二电阻的数目为M1×N1个，所述M1和N1为正整数，所有的所述第二电阻彼此电学并联；步骤S52，设置一第二测试结构，所述第二测试结构包括一第一电阻，以及与第一电阻电学串联的至少一第二电阻，所述第二电阻的数目为M2×N2个，所述M2和N2为正整数，所有的所述第二电 阻彼此电学并联，所述M1×N1的值与M2×N2的值不相等；步骤S53，测量所述第一测试结构与所述第二测试结构的电阻值，并计算其差值；步骤S54，根据所计算的出的电阻值的差，结合M1×N1的值与M2×N2的值的差，计算出第二电阻的阻值；步骤S55，根据获得的第二电阻的阻值，结合第一测试结构或第二测试结构的阻值，计算出第一电阻的阻值。Specific embodiments of the testing method of the present invention are given below in conjunction with the accompanying drawings. FIG. 5 is a schematic diagram of the implementation steps of the method according to this specific embodiment, including: step S51, setting a first test structure, the first test structure includes a first resistor, and a first resistor is electrically connected in series. At least one second resistor, the number of the second resistors is M1×N1, the M1 and N1 are positive integers, and all the second resistors are electrically connected in parallel with each other; step S52, set up a second test structure, all The second test structure includes a first resistor, and at least one second resistor electrically connected in series with the first resistor, the number of the second resistors is M2×N2, the M2 and N2 are positive integers, and all the The second resistors are electrically connected in parallel with each other, and the value of M1×N1 is not equal to the value of M2×N2; step S53, measure the resistance values of the first test structure and the second test structure, and calculate the difference Step S54, according to the difference of the calculated resistance value, in conjunction with the difference of the value of M1 × N1 and the value of M2 × N2, calculate the resistance value of the second resistance; Step S55, according to the obtained resistance of the second resistance The resistance value of the first resistor is calculated in combination with the resistance value of the first test structure or the second test structure.
作为一个具体实施方式，在上述步骤中，为了使测量更准确，如附图6所示，对第一测试结构和第二测试结构进行电阻测试的过程中，分别将电流的流向设置为从第一电阻流向第二电阻，以及从第二电阻流向第一电阻，分别测试上述两种情况下的电阻值，并取平均值作为第一测试结构的电阻。这可以抵消电阻所处环境由于工艺和电场分布造成的系统误差。As a specific embodiment, in the above steps, in order to make the measurement more accurate, as shown in FIG. 6 , in the process of performing the resistance test on the first test structure and the second test structure, the current flow direction is set to One resistance flows to the second resistance, and from the second resistance to the first resistance, the resistance values in the above two cases are respectively tested, and the average value is taken as the resistance of the first test structure. This counteracts systematic errors due to process and electric field distribution in the resistor's environment.
参考步骤S51与S52，设置一第一测试结构，所述第一测试结构包括一第一电阻，以及与第一电阻电学串联的至少一第二电阻，所述第二电阻的数目为M1×N1个，所述M1和N1为正整数，所有的所述第二电阻彼此电学并联，并以M1行和N1列的方式等间距阵列排布；设置一第二测试结构，所述第二测试结构包括一第一电阻，以及与第一电阻电学串联的至少一第二电阻，所述第二电阻的数目为M2×N2个，所述M2和N2为正整数，所有的所述第二电阻彼此电学并联，并以M1行和N1列的方式等间距阵列排布，所述M1×N1的值与M2×N2的值不相等。本步骤可以采用上述结构的具体实施方式中的任意两个。本具体实施方式采用附图2～4所示的具体实施方式进行叙述，即M1＝N1＝1，M2＝2，N2＝1，或M3＝N3＝2。Referring to steps S51 and S52, a first test structure is set up, the first test structure includes a first resistor, and at least one second resistor electrically connected in series with the first resistor, and the number of the second resistors is M1×N1 , the M1 and N1 are positive integers, all the second resistors are electrically connected in parallel with each other, and are arranged in an equidistant array in the form of M1 rows and N1 columns; a second test structure is set up, and the second test structure Including a first resistor, and at least one second resistor electrically connected in series with the first resistor, the number of the second resistors is M2×N2, the M2 and N2 are positive integers, and all the second resistors are mutually They are electrically connected in parallel and arranged in an array with equal spacing in the form of M1 rows and N1 columns, and the value of M1×N1 is not equal to the value of M2×N2. This step may adopt any two of the specific implementation manners of the above structures. This specific embodiment is described by using the specific embodiment shown in FIGS. 2 to 4 , that is, M1=N1=1, M2=2, N2=1, or M3=N3=2.
参考步骤S53以及步骤S54，测量所述第一测试结构的电阻值R th1与所述第二测试结构的电阻值R th2，并计算其差值；根据所计算的出的电阻值的差，结合M1×N1的值与M2×N2的值的差，计算出第二电阻的阻值。由于第一测试结构的第二电阻数目是1个，因此并联电阻值为R ch；第二测试结构的第二电阻数目是2个，因此电阻值为R ch/2。R th1-R th2＝R ch/2，据此可以计算出第二测试电阻的阻值R ch。 Referring to steps S53 and S54, measure the resistance value R th1 of the first test structure and the resistance value R th2 of the second test structure, and calculate the difference; according to the difference between the calculated resistance values, combine The difference between the value of M1×N1 and the value of M2×N2 calculates the resistance value of the second resistor. Since the number of second resistors in the first test structure is one, the parallel resistance value is R ch ; the number of second resistors in the second test structure is two, so the resistance value is R ch /2. R th1 -R th2 =R ch /2, according to which the resistance value R ch of the second test resistor can be calculated.
参考步骤S55，根据获得的第二电阻的阻值，结合第一测试结构或第二测试结构的阻值，计算出第一电阻的阻值。根据Rth 1＝R ch+R GST，或Rth 2＝R ch/2+R GST，皆可计算出第一电阻的阻值R GST。 Referring to step S55, the resistance value of the first resistor is calculated according to the obtained resistance value of the second resistor and in combination with the resistance value of the first test structure or the second test structure. According to Rth 1 =R ch +R GST , or Rth 2 =R ch /2+R GST , the resistance value R GST of the first resistor can be calculated.
以上所述仅是本发明的优选实施方式，应当指出，对于本技术领域的普通技术人员，在不脱离本发明原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本发明的保护范围。The above are only the preferred embodiments of the present invention. It should be pointed out that for those skilled in the art, without departing from the principles of the present invention, several improvements and modifications can also be made, and these improvements and modifications should also be regarded as It is the protection scope of the present invention.

Claims (13)

  1. 一种测试结构，其特征在于，包括：A test structure, characterized in that it includes:
    第一组结构，所述第一组结构包括:The first group of structures, the first group of structures includes:
    一第一电阻；以及a first resistor; and
    与第一电阻电学串联的至少一第二电阻，所述第二电阻的数目为M1×N1个，所述M1和N1为正整数，所有的所述第二电阻彼此电学并联。At least one second resistor is electrically connected in series with the first resistor, the number of the second resistors is M1×N1, the M1 and N1 are positive integers, and all the second resistors are electrically connected in parallel with each other.
  2. 根据权利要求1所述的测试结构，其特征在于，所述测试结构还包含:test structure according to claim 1, is characterized in that, described test structure also comprises:
    第二组结构，所述第二组结构包括:A second group of structures, the second group of structures includes:
    所述第一电阻；以及the first resistor; and
    与所述第一电阻电学串联的至少一第二电阻，所述第二电阻的数目为M2×N2个，所述M2和N2为正整数，所有的所述第二电阻彼此电学并联，且所述M2和N2至少有一者与所述M1和N1不同数值。At least one second resistor is electrically connected in series with the first resistor, the number of the second resistors is M2×N2, the M2 and N2 are positive integers, all the second resistors are electrically connected in parallel with each other, and all At least one of the M2 and N2 is different in value from the M1 and N1.
  3. 根据权利要求2所述的测试结构，其特征在于，所述测试结构用于测试相变存储器的可变电阻结构，所述第一电阻为相变材料层，所述第二电阻为加热器。The test structure according to claim 2, wherein the test structure is used for testing a variable resistance structure of a phase change memory, the first resistance is a phase change material layer, and the second resistance is a heater.
  4. 根据权利要求2所述的测试结构，其特征在于，所述第二电阻以M行和N列的方式等间距阵列排布。The test structure according to claim 2, wherein the second resistors are arranged in an equidistant array in the form of M rows and N columns.
  5. 根据权利要求4所述的测试结构，其特征在于，所述第二电阻设置于一绝缘介质层中，所述第二电阻与所述绝缘介质层的边界的距离是所述第二电阻彼此之间距离的二分之一。The test structure according to claim 4, wherein the second resistor is disposed in an insulating dielectric layer, and the distance between the second resistor and the boundary of the insulating dielectric layer is the distance between the second resistors. half of the distance.
  6. 根据权利要求2所述的测试结构，其特征在于，所述M1等于N1。The test structure of claim 2, wherein the M1 is equal to N1.
  7. 一种测试方法，其特征在于，包括如下步骤：A method of testing, comprising the steps of:
    设置一第一测试结构，所述第一测试结构包括一第一电阻，以及与第一电阻电学串联的至少一第二电阻，所述第二电阻的数目为M1×N1个，所述M1和N1为正整数，所有的所述第二电阻彼此电学并联；A first test structure is set up, the first test structure includes a first resistor, and at least one second resistor electrically connected in series with the first resistor, the number of the second resistors is M1×N1, the M1 and N1 is a positive integer, and all the second resistors are electrically connected in parallel with each other;
    设置一第二测试结构，所述第二测试结构包括一第一电阻，以及与第一电阻电学串联的至少一第二电阻，所述第二电阻的数目为M2×N2个，所述M2和N2为正整数，所有的所述第二电阻彼此电学并联，所述M1×N1的 值与M2×N2的值不相等；A second test structure is provided, the second test structure includes a first resistor, and at least one second resistor electrically connected in series with the first resistor, the number of the second resistors is M2×N2, the M2 and N2 is a positive integer, all the second resistors are electrically connected in parallel with each other, and the value of M1×N1 is not equal to the value of M2×N2;
    测量所述第一测试结构与所述第二测试结构的电阻值，并计算其差值；measuring the resistance values of the first test structure and the second test structure, and calculating the difference;
    根据所计算的出的电阻值的差，结合M1×N1的值与M2×N2的值的差，计算出第二电阻的阻值；According to the difference of the calculated resistance values, combined with the difference between the value of M1×N1 and the value of M2×N2, the resistance value of the second resistor is calculated;
    根据获得的第二电阻的阻值，结合第一测试结构或第二测试结构的阻值，计算出第一电阻的阻值。According to the obtained resistance value of the second resistor, combined with the resistance value of the first test structure or the second test structure, the resistance value of the first resistor is calculated.
  8. 根据权利要求7所述的测试方法，其特征在于，所述测试方法用于测试相变存储器的可变电阻结构，所述第一电阻为相变材料层，所述第二电阻为加热器。The test method according to claim 7, wherein the test method is used for testing a variable resistance structure of a phase change memory, the first resistance is a phase change material layer, and the second resistance is a heater.
  9. 根据权利要求7所述的测试方法，其特征在于，所述第一测试结构的第二电阻以M1行和N1列的方式等间距阵列排布，所述第二测试结构的第二电阻以M2行和N2列的方式等间距阵列排布。The test method according to claim 7, wherein the second resistors of the first test structure are arranged in an equidistant array in the form of M1 rows and N1 columns, and the second resistors of the second test structure are M2 The rows and N2 columns are arranged in an equally spaced array.
  10. 根据权利要求9所述的测试方法，其特征在于，所述第二电阻设置于一绝缘介质层中，所述第二电阻与所述绝缘介质层的边界的距离是所述第二电阻彼此之间距离的二分之一。The test method according to claim 9, wherein the second resistor is disposed in an insulating dielectric layer, and the distance between the second resistor and the boundary of the insulating dielectric layer is the distance between the second resistors. half of the distance.
  11. 根据权利要求7所述的测试方法，其特征在于，所述测量第一测试结构的阻值的步骤中，分别将电流的流向设置为从第一电阻流向第二电阻，以及从第二电阻流向第一电阻，分别测试上述两种情况下的电阻值，并取平均值作为第一测试结构的电阻。The test method according to claim 7, wherein, in the step of measuring the resistance of the first test structure, the flow direction of the current is set to flow from the first resistance to the second resistance, and from the second resistance to the flow direction of the current. For the first resistance, the resistance values in the above two cases are respectively tested, and the average value is taken as the resistance of the first test structure.
  12. 根据权利要求7所述的测试方法，其特征在于，所述测量第二测试结构的阻值的步骤中，分别将电流的流向设置为从第一电阻流向第二电阻，以及从第二电阻流向第一电阻，分别测试上述两种情况下的电阻值，并取平均值作为第二测试结构的电阻。The test method according to claim 7, wherein in the step of measuring the resistance value of the second test structure, the current flow direction is set to flow from the first resistance to the second resistance, and from the second resistance to the flow direction. For the first resistance, the resistance values in the above two cases are respectively tested, and the average value is taken as the resistance of the second test structure.
  13. 根据权利要求7所述的测试方法，其特征在于，所述M1＝N1＝1，所述M2或N2其中一者等于1，另一者等于2。The testing method according to claim 7, wherein the M1=N1=1, one of the M2 or N2 is equal to 1, and the other is equal to 2.
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